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Sample records for crystals radiation hardness

  1. Radiation hardness of undoped BGO crystals

    International Nuclear Information System (INIS)

    Sahu, S.K.; Peng, K.C.; Huang, H.C.; Wang, C.H.; Chang, Y.H.; Hou, W.S.; Ueno, K.; Chou, F.I.; Wei, Y.Y.

    1997-01-01

    We measured the radiation hardness of undoped BGO crystals from two different manufacturers. Such crystals are proposed to be used in a small-angle calorimeter of the BELLE detector of the KEK B-factory. Transparency and scintillation light output of the crystals were monitored to see the effect of radiation damage. The crystals show considerable radiation hardness up to 10.2 Mrad equivalent dose, which is much higher than the maximum expected dosage of 500 krad per year of running at BELLE. (orig.)

  2. Testing the radiation hardness of lead tungstate scintillating crystals

    CERN Document Server

    Shao, M; Li Chuan; Chen, H; Xu, Z Z; Wang, Z M

    2000-01-01

    Large Hadron Collider operation will produce a high radiation background. PbWO/sub 4/ crystals are selected as scintillators for the CMS electromagnetic calorimeter. To reach the precise requirement for energy measurements, a strict requirement for the radiation hardness is needed. In this paper, we present a method for evaluating the radiation hardness and its measurement. Results for several full size (23 cm length) lead tungstate crystals under Co/sup 60/ gamma - ray irradiation are given, investigating the light yield loss and its longitudinal uniformity. (8 refs).

  3. Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

    CERN Document Server

    Adzic, P.; Andelin, D.; Anicin, I.; Antunovic, Z.; Arcidiacono, R.; Arenton, M.W.; Auffray, E.; Argiro, S.; Askew, A.; Baccaro, S.; Baffioni, S.; Balazs, M.; Bandurin, D.; Barney, D.; Barone, L.M.; Bartoloni, A.; Baty, C.; Beauceron, S.; Bell, K.W.; Bernet, C.; Besancon, M.; Betev, B.; Beuselinck, R.; Biino, C.; Blaha, J.; Bloch, P.; Borisevitch, A.; Bornheim, A.; Bourotte, J.; Brown, R.M.; Buehler, M.; Busson, P.; Camanzi, B.; Camporesi, T.; Cartiglia, N.; Cavallari, F.; Cecilia, A.; Chang, P.; Chang, Y.H.; Charlot, C.; Chen, E.A.; Chen, W.T.; Chen, Z.; Chipaux, R.; Choudhary, B.C.; Choudhury, R.K.; Cockerill, D.J.A.; Conetti, S.; Cooper, S.I.; Cossutti, F.; Cox, B.; Cussans, D.G.; Dafinei, I.; Da Silva Di Calafiori, D.R.; Daskalakis, G.; David, A.; Deiters, K.; Dejardin, M.; De Benedetti, A.; Della Ricca, G.; Del Re, D.; Denegri, D.; Depasse, P.; Descamps, J.; Diemoz, M.; Di Marco, E.; Dissertori, G.; Dittmar, M.; Djambazov, L.; Djordjevic, M.; Dobrzynski, L.; Dolgopolov, A.; Drndarevic, S.; Drobychev, G.; Dutta, D.; Dzelalija, M.; Elliott-Peisert, A.; El Mamouni, H.; Evangelou, I.; Fabbro, B.; Faure, J.L.; Fay, J.; Fedorov, A.; Ferri, F.; Franci, D.; Franzoni, G.; Freudenreich, K.; Funk, W.; Ganjour, S.; Gascon, S.; Gataullin, M.; Gentit, F.X.; Ghezzi, A.; Givernaud, A.; Gninenko, S.; Go, A.; Gobbo, B.; Godinovic, N.; Golubev, N.; Govoni, P.; Grant, N.; Gras, P.; Haguenauer, M.; Hamel de Monchenault, G.; Hansen, M.; Haupt, J.; Heath, H.F.; Heltsley, B.; Cornell U., LNS.; Hintz, W.; Hirosky, R.; Hobson, P.R.; Honma, A.; Hou, G.W.S.; Hsiung, Y.; Huhtinen, M.; Ille, B.; Ingram, Q.; Inyakin, A.; Jarry, P.; Jessop, C.; Jovanovic, D.; Kaadze, K.; Kachanov, V.; Kailas, S.; Kataria, S.K.; Kennedy, B.W.; Kokkas, P.; Kolberg, T.; Korjik, M.; Krasnikov, N.; Krpic, D.; Kubota, Y.; Kuo, C.M.; Kyberd, P.; Kyriakis, A.; Lebeau, M.; Lecomte, P.; Lecoq, P.; Ledovskoy, A.; Lethuillier, M.; Lin, S.W.; Lin, W.; Litvine, V.; Locci, E.; Longo, E.; Loukas, D.; Luckey, P.D.; Lustermann, W.; Ma, Y.; Malberti, M.; Malcles, J.; Maletic, D.; Manthos, N.; Maravin, Y.; Marchica, C.; Marinelli, N.; Markou, A.; Markou, C.; Marone, M.; Matveev, V.; Mavrommatis, C.; Meridiani, P.; Milenovic, P.; Mine, P.; Missevitch, O.; Mohanty, A.K.; Moortgat, F.; Musella, P.; Musienko, Y.; Nardulli, A.; Nash, J.; Nedelec, P.; Negri, P.; Newman, H.B.; Nikitenko, A.; Nessi-Tedaldi, F.; Obertino, M.M.; Organtini, G.; Orimoto, T.; Paganoni, M.; Paganini, P.; Palma, A.; Pant, L.; Papadakis, A.; Papadakis, I.; Papadopoulos, I.; Paramatti, R.; Parracho, P.; Pastrone, N.; Patterson, J.R.; Pauss, F.; Peigneux, J.P.; Petrakou, E.; Phillips, D.G.; Piroue, P.; Ptochos, F.; Puljak, I.; Pullia, A.; Punz, T.; Puzovic, J.; Ragazzi, S.; Rahatlou, S.; Rander, J.; Razis, P.A.; Redaelli, N.; Renker, D.; Reucroft, S.; Ribeiro, P.; Rogan, C.; Ronquest, M.; Rosowsky, A.; Rovelli, C.; Rumerio, P.; Rusack, R.; Rusakov, S.V.; Ryan, M.J.; Sala, L.; Salerno, R.; Schneegans, M.; Seez, C.; Sharp, P.; Shepherd-Themistocleous, C.H.; Shiu, J.G.; Shivpuri, R.K.; Shukla, P.; Siamitros, C.; Sillou, D.; Silva, J.; Silva, P.; Singovsky, A.; Sirois, Y.; Sirunyan, A.; Smith, V.J.; Stockli, F.; Swain, J.; Tabarelli de Fatis, T.; Takahashi, M.; Tancini, V.; Teller, O.; Theofilatos, K.; Thiebaux, C.; Timciuc, V.; Timlin, C.; Titov, Maxim P.; Topkar, A.; Triantis, F.A.; Troshin, S.; Tyurin, N.; Ueno, K.; Uzunian, A.; Varela, J.; Verrecchia, P.; Veverka, J.; Virdee, T.; Wang, M.; Wardrope, D.; Weber, M.; Weng, J.; Williams, J.H.; Yang, Y.; Yaselli, I.; Yohay, R.; Zabi, A.; Zelepoukine, S.; Zhang, J.; Zhang, L.Y.; Zhu, K.; Zhu, R.Y.

    2010-01-01

    Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

  4. Radiation Hardness Study of CsI(Tl) Crystals for Belle II Calorimeter

    CERN Document Server

    Matvienko, D V; Sedov, E V; Shwartz, B A

    2017-01-01

    The Belle II calorimeter (at least, its barrel part) consists of CsI(Tl) scintillation crystals which have been used at the Belle experiment. We perform the radiation hardness study of some typical Belle crystals and conclude their light output reductions are acceptable for Belle II experiment where the absorption dose can reach 10 krad during the detector operation. CsI(Tl) crystals have high stablity and low maintenance cost and are considered as possible option for the calorimeter of the future Super-Charm-Tau factory (SCT) in Novosibirsk. Our study demonstrates sufficiently high radiation hardness of CsI(Tl) crystals for SCT conditions.

  5. Radiation hardness of LuAG:Ce and LuAG:Pr scintillator crystals

    CERN Document Server

    Derdzyan, M V; Belsky, A; Dujardin, C; Lecoq, P; Lucchini, M; Ovanesyan, K L; Pauwels, K; Pedrini, C; Petrosyan, A G

    2012-01-01

    Single crystals of LuAG:Ce, LuAG:Pr and un-doped LuAG were grown by the vertical Bridgman method and studied for radiation hardness under gamma-rays with doses in the range 10-10(5) Gy (Co-60). A wide absorption band peaking at around 600 nm springs up in all three types of crystals after the irradiations. The second band peaking at around 375 nm appears in both LuAG:Pr and un-doped LuAG. Compositional variations have been done to reveal the spectral behavior of induced color centers in more detail and to understand their origin. Similarities in behavior of Yb2+ centers in as-grown garnets are found, indicating that radiation induced color centers can be associated with residual trace amounts of Yb present in the raw materials. Un-doped LuAG and LuAG:Ce demonstrate moderate radiation hardness (the induced absorption coefficients being equal to 0.05-0.08 cm(-1) for accumulated doses of 10(3)-10(4) Gy), while LuAG:Pr is less radiation hard. The ways to improve the radiation hardness are discussed.

  6. Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Yuki, E-mail: y.sato@riken.jp [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Shimaoka, Takehiro; Kaneko, Junichi H. [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Murakami, Hiroyuki [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Isobe, Mitsutaka; Osakabe, Masaki [National Institute for Fusion Science, 322-6, Oroshi-cho Toki-city, Gifu 509-5292 (Japan); Tsubota, Masakatsu [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Ochiai, Kentaro [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shinichi [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2015-06-01

    We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6–8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector.

  7. Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

    CERN Document Server

    Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

    2002-01-01

    It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

  8. Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

    CERN Document Server

    Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

    2001-01-01

    It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

  9. Improvement of optical properties and radiation hardness of NaBi(WO sub 4) sub 2 Cherenkov crystals

    CERN Document Server

    Zadneprovski, B I; Polyansky, E V; Devitsin, E G; Kozlov, V A; Potashov, S Yu; Terkulov, A R

    2002-01-01

    On the basis of the data on melt evaporation while growing NaBi(WO sub 4) sub 2 Cherenkov crystals, the formation of nonstoichiometry and most probable types of dot defects of the crystals have been considered. The influence of melt nonstoichiometry and doping with Sc on optical transmission and radiation hardness of the crystals has been experimentally investigated. The surplus of WO sub 3 has been established to increase optical transmission and radiation hardness and lack of Bi sub 2 O sub 3 in the melt to reduce radiation hardness. Sc doping is shifting the absorption edge to UV region by 30-35 nm and is increasing radiation hardness of the crystals about three-fold. Analytical estimations give the increase of the number of Cherenkov photons by a factor of 1.3, which leads to an improvement of the energy resolution of a calorimeter based on NaBi(WO sub 4) sub 2 :Sc crystals compared with undoped NaBi(WO sub 4) sub 2 of approximately 15%.

  10. Preparation and characterisation of radiation hard PbWO4 crystal scintillator

    International Nuclear Information System (INIS)

    Sabharwal, S.C.; Desai, D.G.; Sangeeta; Karandikar, S.C.; Chauhan, A.K.; Sangiri, A.K.; Keshwani, K.S.; Ahuja, M.N.

    1996-01-01

    The selective loss of one of the crystal constituents is found to be responsible for the yellowish coloration of PbWO 4 crystals. However, using the already pulled crystals as the starting charge for the subsequent growth, colorless crystals can be grown. The crystals exhibiting excellent transmission characteristics have been grown employing a low temperature gradient, a moderate rotation rate of 15 rpm and a pull speed of 1 mm/h. The colored crystals show some radiation damage on gamma irradiation, while the colorless ones remain unaffected even for irradiation doses as high as 10 Mrad. Both the types of crystals show the presence of weak thermoluminescence (TL) emission when high irradiation doses (similar 10 Mrad) are given. Only one TL glow peak is obtained in both the cases but the peak temperatures are different. The emission centers responsible for the TL emission are found to be the ones which give rise to the scintillation emission in the crystal. (orig.)

  11. Influence of variable tungsten valency on optical transmittance and radiation hardness of lead tungstate (PWO) scintillation crystals

    CERN Document Server

    Burachas, S; Makov, I; Saveliev, Yu; Ippolitov, M S; Man'ko, V; Nikulin, S P; Nyanin, A; Vasilev, A; Apanasenko, A; Tamulaitis, G

    2003-01-01

    A new approach to interpret the radiation hardness of PbWO//4 (PWO) scintillators is developed by revealing importance of the inclusions of tungsten oxides WO//3//-//x with variable valency. It is demonstrated that the influence of the ionizing radiation on PWO is, in many aspects, similar to the effect of the high-temperature annealing in oxygenless ambient. In both cases, a valency change of the tungsten oxides is initiated and results in induced absorption and, consequently, in crystal coloration. In the PWO crystals doped with L//2O//3 (L = Y, La, Gd), the radiation hardness and the optical properties are mainly affected by inclusions of W//1//-//yL//yO//3//- //x (0 less than x less than 0.3) instead of inclusions of WO//3//- //x prevailing in the undoped samples. It is demonstrated that the radiation-induced bleaching and the photochromic effect of PWO are caused by phase transitions in the inclusions of tungsten oxide. Thermodynamic conditions for the phase transitions are discussed and the optimal oxid...

  12. Radiation Damage Mechanism in PbWO4 Crystal and Radiation Hardness Quality Control of PWO Scintillators for CMS

    CERN Document Server

    Baccaro, Stefania; Borgia, Bruno; Cavallari, Francesca; Cecilia, Angelica; Dafinei, Ioan; Diemoz, Marcella; Lecoq, Paul; Longo, Egidio; Montecchi, Marco; Organtini, Giovanni; Salvatori, S

    1997-01-01

    The optical damage induced by UV light in PbWO4 crystals is found to be similar to that induced by g radiation. Due to the peculiarities of optical absorption in PbWO4, the damage induced by UV light is a bulk process. This fact has important consequences for the approach to be adopted both for the use of the crystal as scintillator and for the qualification methods foreseen in the Regional Centres of the ECAL CMS Collaboration.

  13. Systematic study of radiation hardness of single crystal CVD diamond material investigated with an Au beam and IBIC method

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszko, Jerzy; Koenig, Wolfgang; Traeger, Michael [GSI, Darmstadt (Germany); Draveny, Antoine; Galatyuk, Tetyana [TU, Darmstadt (Germany); Grilj, Veljko [RBI, Zagreb (Croatia); Collaboration: HADES-Collaboration

    2016-07-01

    For the future high rate CBM experiment at FAIR a radiation hard and fast beam detector is required. The detector has to perform precise T0 measurement (σ<50 ps) and should also offer decent beam monitoring capability. These tasks can be performed by utilizing single-crystal Chemical Vapor Deposition (ScCVD) diamond based detector. A prototype, segmented, detector have been constructed and the properties of this detector have been studied with a high current density beam (about 3.10{sup 6}/s/mm{sup 2}) of 1.23 A GeV Au ions in HADES. The irradiated detector properties have been studied at RBI in Zagreb by means of IBIC method. Details of the design, the intrinsic properties of the detectors and their performance after irradiation with such beam are reported.

  14. Investigation of single defects created in crystals by laser emission and hard radiation

    International Nuclear Information System (INIS)

    Martynovich, E F; Dresvyanskiy, V P; Boychenko, S V; Rakevich, A L; Zilov, S A; Bagayev, S N

    2017-01-01

    The possibility of identifying radiation-created quantum systems via the characteristics of quantum trajectories of luminescence intensity measured on individual centers by confocal scanning fluorescence microscopy with the time-correlated single photon counting has been studied. Calculations of the quantum trajectories have been carried out by the density matrix method. Experimental studies have been carried out using a confocal microscope. (paper)

  15. Photon multiplicity in the hard radiation of 150 GeV electrons in an aligned germanium crystal

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.B.; Sun, C.R.

    1988-01-01

    Mean values m of photon multiplicity in the radiation of 150 GeV electrons directed at and near the axis of a 0.185 mm thick Ge crystal cooled to 100 K have been deduced from the measurements of pair conversion probabilities. Depending on the distribution of multiplicity assumed, values of m ranging from 3.8 to 4.3 are obtained for the previously reported anomalous radiation peak. (orig.)

  16. Radiation hardness test of un-doped CsI crystals and Silicon Photomultipliers for the Mu2e calorimeter

    Science.gov (United States)

    Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Loreti, S.; Miscetti, S.; Pillon, M.; Sarra, I.

    2017-11-01

    The Mu2e calorimeter is composed by 1400 un-doped CsI crystals coupled to large area UV extended Silicon Photomultipliers arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position. It should also be fast enough to handle the high rate background and it must operate and survive in a high radiation environment. Simulation studies estimated that, in the hottest regions, each crystal will absorb a dose of 300 Gy and will be exposed to a neutron fluency of 6 × 1011 n/cm2 in 3 years of running. Test of un-doped CsI crystals irradiated up to 900 Gy and to a neutron fluency up to 9 × 1011 n/cm2 have been performed at CALLIOPE and FNG ENEA facilities in Italy. We present our study on the variation of light yield (LY) and longitudinal response uniformity (LRU) of these crystals after irradiation. The ionization dose does not modify LRU while a 20% reduction in LY is observed at 900 Gy. Similarly, the neutron flux causes an acceptable LY deterioration (≤ 15%). A neutron irradiation test on different types of SIPMs (two different array models from Hamamatsu and one from FBK) have also been carried out by measuring the variation of the leakage current and the charge response to an ultraviolet led. We concluded that, in the experiment, we will need to cool down the SIPMs to 0 °C reduce the leakage current to an acceptable level.

  17. CMOS optimization for radiation hardness

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Fossum, J.G.

    1975-01-01

    Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

  18. Systematic hardness studies on lithium niobate crystals

    Indian Academy of Sciences (India)

    Unknown

    crystals with different growth origins, and a Fe-doped sample. The problem of load ... The true hardness of LiNbO3 is found to be 630 ± 30 kg/mm2. .... Experimental. Pure lithium ... the index of d strikes at this simple and meaningful defini-.

  19. Radiation hard diamond sensors for future tracking applications

    International Nuclear Information System (INIS)

    Adam, W.; Boer, W. de; Borchi, E.

    2006-01-01

    Progress in experimental particle physics in the coming decade depends crucially upon the ability to carry out experiments in high-radiation areas. In order to perform these complex and expensive experiments, new radiation hard technologies must be developed. This paper discusses the use of diamond detectors in future tracking applications and their survivability in the highest radiation environments. We present results of devices constructed with the newest polycrystalline and single crystal Chemical Vapor Deposition diamond and their tolerance to radiation

  20. BaYb2F8, a new radiation hard Cherenkov radiator for electromagnetic calorimeters

    International Nuclear Information System (INIS)

    Aseev, A.A.; Devitsin, E.G.; Komar, A.A.; Kozlov, V.A.; Hovsepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

    1992-01-01

    Radiation hardness and optical properties of a new Cherenkov radiator, heavy fluoride BaYb 2 F 8 doped with various elements, have been studied. The above mentioned crystal has the density of 7 g/cm 3 , the radiation length is 1.28 cm and the Moliere radius 2.44 cm. High radiation hardness has been demonstrated for BaYb 2 F 8 doped with Tm, Pr, Tb. (orig.)

  1. Impact of aging on radiation hardness

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.

    1997-01-01

    Burn-in effects are used to demonstrate the potential impact of thermally activated aging effects on functional and parametric radiation hardness. These results have implications on hardness assurance testing. Techniques for characterizing aging effects are proposed

  2. Development of radiation hard scintillators

    International Nuclear Information System (INIS)

    Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G.; Blackburn, R.

    1992-05-01

    Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro

  3. Radiation-Hard Quartz Cerenkov Calorimeters

    International Nuclear Information System (INIS)

    Akgun, U.; Onel, Y.

    2006-01-01

    New generation hadron colliders are going to reach unprecedented energies and radiation levels. Quartz has been identified as a radiation-hard material that can be used for Cerenkov calorimeters of the future experiments. We report from the radiation hardness tests performed on quartz fibers, as well as the characteristics of the quartz fiber and plate Cerenkov calorimeters that have been built, designed, and proposed for the CMS experiment

  4. Radiation hard memory cell and array thereof

    International Nuclear Information System (INIS)

    Gunckel, T.L. II; Rovell, A.; Nielsen, R.L.

    1978-01-01

    A memory cell configuration that is implemented to be relatively hard to the adverse effects of a nuclear event is discussed. The presently disclosed memory cell can be interconnected with other like memory cells to form a high speed radiation hard register file. Information is selectively written into and read out of a memory cell comprising the register file, which memory cell preserves previously stored data without alteration in the event of exposure to high levels of nuclear radiation

  5. Radiation Damage in Scintillating Crystals

    CERN Document Server

    Zhu Ren Yuan

    1998-01-01

    Crystal Calorimetry in future high energy physics experiments faces a new challenge to maintain its precision in a hostile radiation environment. This paper discusses the effects of radiation damage in scintillating crystals, and concludes that the predominant radiation damage effect in crystal scintillators is the radiation induced absorption, or color center formation, not the loss of the scintillation light yield. The importance of maintaining crystal's light response uniformity and the feasibility to build a precision crystal calorimeter under radiation are elaborated. The mechanism of the radiation damage in scintillating crystals is also discussed. While the damage in alkali halides is found to be caused by the oxygen or hydroxyl contamination, it is the structure defects, such as oxygen vacancies, cause damage in oxides. Material analysis methods used to reach these conclusions are presented in details.

  6. How to estimate hardness of crystals on a pocket calculator

    International Nuclear Information System (INIS)

    Simunek, Antonin

    2007-01-01

    A generalization of the semiempirical microscopic model of hardness is presented and applied to currently studied borides, carbides, and nitrides of heavy transition metals. The hardness of OsB, OsC, OsN, PtN, RuC, RuB 2 , ReB 2 , OsB 2 , IrN 2 , PtN 2 , and OsN 2 crystals in various structural phases is predicted. It is found that none of the transition metal crystals is superhard, i.e., with hardness greater than 40 GPa. The presented method provides materials researchers with a practical tool in the search for new hard materials

  7. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  8. CeF3(Ba) radiation hard scintillator for electromagnetic calorimeters

    International Nuclear Information System (INIS)

    Aseev, A.A.; Devitsin, E.G.; Kozlov, V.A.; Hovepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

    1992-01-01

    The influence of divalent fluoride dopants BaF 2 , CaF 2 , SrF 2 on radiation and luminescent properties of CeF 3 crystal is studied. A high radiation hardness (>10 8 rad) has been obtained for CeF 3 crystals doped with BaF 2 . (orig.)

  9. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  10. Radiation hardness assurances categories for COTS technologies

    International Nuclear Information System (INIS)

    Hash, G.L.; Shaneyfelt, M.R.; Sexton, F.W.; Winokur, P.S.

    1997-01-01

    A comparison of the radiation tolerance of three commercial, and one radiation hardened SRAM is presented for four radiation environments. This work has shown the difficulty associated with strictly categorizing a device based solely on its radiation response, since its category depends on the specific radiation environment considered. For example, the 3.3-V Paradigm SRAM could be considered a radiation-tolerant device except for its SEU response. A more useful classification depends on the methods the manufacturer uses to ensure radiation hardness, i.e. whether specific design and process techniques have been used to harden the device. Finally, this work has shown that burned-in devices may fail functionally as much as 50% lower in total dose environments than non-burned-in devices. No burn-in effect was seen in dose-rate upset, latchup, or SEE environments. The user must ensure that total dose lot acceptance testing was performed on burned-in devices

  11. Crystallizing hard-sphere glasses by doping with active particles

    NARCIS (Netherlands)

    Ni, Ran; Cohen Stuart, Martien A.; Dijkstra, Marjolein; Bolhuis, Peter G.

    2014-01-01

    Crystallization and vitrification are two different routes to form a solid. Normally these two processes suppress each other, with the glass transition preventing crystallization at high density (or low temperature). This is even true for systems of colloidal hard spheres, which are commonly used as

  12. Hard photon emission from high energy electrons and positrons in single crystals

    International Nuclear Information System (INIS)

    Bajer, V.N.; Katkov, V.M.; Strakhovenko, V.M.

    1991-01-01

    A radiation of electrons and positrons in single crystals in coherent bremsstrahlung (CBS) region has been considered for the case when CBS has the most hard spectrum. Under this condition a particle moves near a crystalline plane (in fcc(d) crystal for axis (001) this is the plane (110)) and influence of the continuous plane potential should be taken into account. This potential gives additional contribution in soft part of the spectrum and affects on hard photon emission. Observation of this phenomena at high energy is discussed. 14 refs.; 5 figs.; 1 tab

  13. Optical fiber composition and radiation hardness

    International Nuclear Information System (INIS)

    Wall, J.A.; Loretz, T.J.

    1982-01-01

    Germanium phosphosilicate and germanium borosilicate fibers doped with cerium were fabricated and tested for their responses to steady-state Co-60 radiation at -55 C, +20 C and +125 C. A fiber with germanium, boron and phosphorous in the silicate core and doped with antimony in the core and clad was similarly tested. All of the fibers showed significant improvements in radiation hardness at 20 C compared to undoped fibers of the same base composition. At -55 C, however, all except the cerium doped germanium phosphosilicate were very radiation sensitive and also showed increases in the rate of induced loss at +125 C. The cerium doped germanium phosphosilicate fiber showed virtually no change in radiation sensitivity at the temperature extremes and could prove useful in applications requiring relatively short lengths of fiber

  14. Anisotropy of hardness and laser damage threshold of unidirectional organic NLO crystal in relation to the internal structure

    International Nuclear Information System (INIS)

    Natarajan, V.; Arivanandhan, M.; Sankaranarayanan, K.; Hayakawa, Y.

    2011-01-01

    Highlights: · Growth rate of the unidirectional organic crystals were measured and the variation in the growth rate was explained based on the attachment energy model. · Anisotropic behaviors of hardness and laser damage threshold of the unidirectional materials were analyzed. · The obtained results were explained based on the crystal structure of the material. - Abstract: Unidirectional benzophenone crystals were grown along , and directions by uniaxially solution crystallization method at ambient temperature. The growth rate of the grown crystals was varied with orientation. The optical absorption coefficients of benzophenone were measured as a function of wavelength. The optical absorption study reveals that the benzophenone crystal has very low absorption in the wavelength range of interest. Moreover, the laser damage threshold and micro hardness for , and oriented unidirectional benzophenone crystals were measured using a Q-switched Nd:YAG laser operating at 1064 nm radiation and Vicker's micro hardness tester, respectively. The laser damage threshold is larger for the and oriented crystals compared to oriented crystal at 1064 nm wavelength. The result is consistent with the hardness variation observed for the three different crystallographic directions of benzophenone crystal. The relation between the laser damage profile and mechanical hardness anisotropy is discussed based on the crystal structure of benzophenone.

  15. Radiation hardness of CMS pixel barrel modules

    CERN Document Server

    Rohe, T; Erdmann, W; Kästli, H C; Khalatyan, S; Meier, B; Radicci, V; Sibille, J

    2010-01-01

    Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6E14 Neq and with 21 GeV protons at CERN up to 5E15 Neq. After irradiation the response of the system to beta particles from a Sr-90 source w...

  16. Radiation hardness of CMS pixel barrel modules

    International Nuclear Information System (INIS)

    Rohe, T.; Bean, A.; Erdmann, W.; Kaestli, H.-C.; Khalatyan, S.; Meier, B.; Radicci, V.; Sibille, J.

    2010-01-01

    Pixel detectors are used in the innermost part of the multi purpose experiments at the LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has been thoroughly tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6x10 14 n eq /cm 2 and with 21 GeV protons at CERN up to 5x10 15 n eq /cm 2 . After irradiation the response of the system to beta particles from a 90 Sr source was measured to characterise the charge collection efficiency of the sensor. Radiation induced changes in the readout chip were also measured. The results show that the present pixel modules can be expected to be still operational after a fluence of 2.8x10 15 n eq /cm 2 . Samples irradiated up to 5x10 15 n eq /cm 2 still see the beta particles. However, further tests are needed to confirm whether a stable operation with high particle detection efficiency is possible after such a high fluence.

  17. The chemistry of two-component fluoride crystalline optical media for heavy, fast, radiation hard scintillators

    International Nuclear Information System (INIS)

    Sobolev, B.P.; Krivandina, E.A.; Fedorov, P.P.; Vasilchenko, V.G.

    1994-01-01

    Prospects for preparation of two-component dense optical materials for scintillators are shown, using data on phase diagrams of about 300 MF m - RF n (m, n ≤ 4) type systems, formed by metal fluorides. Primary characteristics (decay time and light output of luminescence, radiation hardness, etc.) of some multicomponent crystals are reported

  18. Electronic basis of hardness and phase transformations (covalent crystals)

    International Nuclear Information System (INIS)

    Gilman, J J

    2008-01-01

    Several electronic parameters measure the stabilities of covalent crystals, including minimum energy band-gap densities, inverse polarizabilities, plasma frequencies, transverse vibrational frequencies and elastic shear moduli. Convenient is the band-gap density (energy/volume; called the 'bond modulus'). For a given bonding type, the indentation hardness is proportional to the bond modulus. Examples are the group IV elements, III-V compounds; and II-VI compounds. The motion of dislocation kinks requires the excitation of bonding electrons into anti-bonding states. The bond modulus measures this together with the work done by the applied stress when a kink moves. In addition to hardness, the bond modulus measures the compressive strain (pressure) needed to transform an ambient structure into a more dense structure. Activation of such transformations also requires the excitation of bonding electrons into anti-bonding states together with the work done by the compressive stress

  19. Hard X-ray diffraction enhanced imaging only using two crystals

    Institute of Scientific and Technical Information of China (English)

    LI Gang; WANG Nan; WU Ziyu

    2004-01-01

    Different configurations for the monochromator crystals and the analyzer crystals have been used in hard X-ray diffraction enhanced imaging (DEI) methods to overcome the complex task to adjust each of them to the ideal position. Here we present a very compact DEI configuration, and preliminary results of experiments performed at the Beijing Synchrotron Radiation Facility (BSRF) using only two crystals: the first one acting as monochromator and the second one as analyzer in the Bragg geometry. Refraction contrast images characterized by high contrast and spatial resolution are obtained and compared with absorption images. Differences among these images will be outlined and discussed emphasizing the potential capabilities of this very simple layout that guarantees a high transmission efficiency.

  20. Radiation hard solar cell and array

    International Nuclear Information System (INIS)

    Russell, R.L.

    1975-01-01

    A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

  1. Development of high temperature, radiation hard detectors based on diamond

    Energy Technology Data Exchange (ETDEWEB)

    Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

    2017-02-11

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

  2. Test of radiation hardness of pcCVD detectors

    Energy Technology Data Exchange (ETDEWEB)

    Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

    2016-07-01

    The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

  3. Radiation hardness of new Kuraray double cladded optical fibers

    International Nuclear Information System (INIS)

    Bedeschi, F.; Menzione, A.; Budagov, Yu.; Chirikov-Zorin, I.; Solov'ev, A.; Turchanovich, L.; Vasil'chenko, V.

    1996-01-01

    The radiation hardness of the new plastic scintillating and clear fibers irradiated by 137 Cs γ-flux and by pulsed reactor fast neutrons were investigated. All the studied fibers were of S-type (with S=70) and had a double cladding. Optical fibers degradation study after irradiation shows that the level of radiation hardness lower that what is expected from results of previous studies. 9 refs., 6 figs

  4. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  5. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  6. Local order and crystallization of dense polydisperse hard spheres

    Science.gov (United States)

    Coslovich, Daniele; Ozawa, Misaki; Berthier, Ludovic

    2018-04-01

    Computer simulations give precious insight into the microscopic behavior of supercooled liquids and glasses, but their typical time scales are orders of magnitude shorter than the experimentally relevant ones. We recently closed this gap for a class of models of size polydisperse fluids, which we successfully equilibrate beyond laboratory time scales by means of the swap Monte Carlo algorithm. In this contribution, we study the interplay between compositional and geometric local orders in a model of polydisperse hard spheres equilibrated with this algorithm. Local compositional order has a weak state dependence, while local geometric order associated to icosahedral arrangements grows more markedly but only at very high density. We quantify the correlation lengths and the degree of sphericity associated to icosahedral structures and compare these results to those for the Wahnström Lennard-Jones mixture. Finally, we analyze the structure of very dense samples that partially crystallized following a pattern incompatible with conventional fractionation scenarios. The crystal structure has the symmetry of aluminum diboride and involves a subset of small and large particles with size ratio approximately equal to 0.5.

  7. Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

    Science.gov (United States)

    Pugel, Diane

    2011-01-01

    This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

  8. Development of radiation hardness components for ITER remote maintenance

    Energy Technology Data Exchange (ETDEWEB)

    Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Yagi, Toshiaki; Morita, Yousuke

    1998-04-01

    In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

  9. Development of radiation hardness components for ITER remote maintenance

    International Nuclear Information System (INIS)

    Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira; Yagi, Toshiaki; Morita, Yousuke

    1998-01-01

    In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

  10. The hardness of synthetic products obtained from cooled and crystallized basaltic melts (in Romanian)

    OpenAIRE

    Daniela Ogrean

    2001-01-01

    The Hardness of Synthetic Products Obtained from Cooled and Crystallized Basaltic Melts. Hardness is one of the main properties of the products obtained from cooled and crystallized basaltic melts under a controlled thermal regime. It influences the abrasion tear resistance of the resulted material. The microhardness measurements on the samples (bricks, boards, gutters, armour plates, tubes) indicated Vickers hardness value between 757–926 for the materials obtained from Şanovita basalts (Tim...

  11. Hard facts for radiation curing of elastomers

    International Nuclear Information System (INIS)

    Lyall, D.J.

    1984-01-01

    The subject is covered under the headings: introduction; outline of chemistry (differences between conventional and radiation curing); compounding; green strength; response of rubbers to electron beam treatment; electron beam cured applications:(a) wire and cable applications;(b) rubber tyre components;(c) heat shrinkable materials;(d) roofing materials. (U.K.)

  12. Development of radiation hard components for remote maintenance

    International Nuclear Information System (INIS)

    Oka, Kiyoshi; Obara, Kenjiro; Kakudate, Satoshi; Tominaga, Ryuichiro; Akada, Tamio; Morita, Hirosuke.

    1997-01-01

    In International Thermonuclear Experimental Reactor (ITER), in-vessel remote-handling is inevitably required to assemble and maintain activated in-vessel components due to D-T operation. The components of the in-vessel remote-handling system must have sufficient radiation hardness to allow for operation under an intense gamma-ray radiation of over 30 kGy/h for periods up to more than 1,000 hours. To this end, extensive irradiation tests and quality improvements including the optimization of material composition have been conducted through the ITER R and D program in order to develop radiation hard components which satisfy radiation doses from 10 MGy to 100 MGy at the dose rate of 10 kGy/h. This paper outlines the latest status of the radiation hard component development that has been conducted as the Japan Home Team's contribution to ITER. The remote-handling components tested are categorized into either robotics, viewing systems or common components. The irradiation tests include commercial base products for screening both modified and newly developed products to improve their radiation hardness. (author)

  13. Physics of radiation effects in crystals

    CERN Document Server

    Johnson, RA

    1986-01-01

    ``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor ma

  14. The transient radiation effects and hardness of programmed device

    International Nuclear Information System (INIS)

    Du Chuanhua; Xu Xianguo; Zhao Hailin

    2014-01-01

    A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

  15. Capillary discharge sources of hard UV radiation

    International Nuclear Information System (INIS)

    Cachoncinlle, C; Dussart, R; Robert, E; Goetze, S; Pons, J; Mohanty, S R; Viladrosa, R; Fleurier, C; Pouvesle, J M

    2002-01-01

    We developed and studied three different extreme ultraviolet (EUV) capillary discharge sources either dedicated to the generation of coherent or incoherent EUV radiation. The CAPELLA source has been developed especially as an EUV source for the metrology at 13.4 nm. With one of these sources, we were able to produce gain on the Balmer-Hα (18.22 nm) and Hβ (13.46 nm) spectral lines in carbon plasma. By injecting 70 GW cm -3 we measured gain-length products up to 1.62 and 3.02 for the Hα and Hβ, respectively optimization of the EUV capillary source CAPELLA led to the development of an EUV lamp which emits 2 mJ in the bandwidth of the MoSi mirror, per joule stored, per shot and in full solid angle. The wall-plug efficiency is 0.2%. Stability of this lamp is better than 4% and the lamp can operate at repetition rate of 50 Hz

  16. Self-standing quasi-mosaic crystals for focusing hard X-rays

    International Nuclear Information System (INIS)

    Camattari, Riccardo; Guidi, Vincenzo; Bellucci, Valerio; Neri, Ilaria; Frontera, Filippo; Jentschel, Michael

    2013-01-01

    A quasi mosaic bent crystal for high-resolution diffraction of X and γ rays has been realized. A net curvature was imprinted to the crystal thanks to a series of superficial grooves to keep the curvature without external devices. The crystal highlights very high diffraction efficiency due to quasi mosaic curvature. Quasi mosaic crystals of this kind are proposed for the realization of a high-resolution focusing Laue lens for hard X-rays.

  17. Radiation of ultrarelativistic particles passing through ideal and mosaic crystals

    International Nuclear Information System (INIS)

    Afanas'ev, A.M.

    1977-01-01

    When a charged particle passes through an ideal crystal, then besides the transition radiation, a new kind of radiation, connected with the periodic structure of the crystal is produced. The influence of mosaic structure of a crystal on the intensity of this radiation is considered. Simple analytical expressions for the integral intensity of this radiation for the case of an ideal crystal are obtained. The results show, that the integral radiation intensity depends weakly on the degree of crystal perfection

  18. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Rasouli, C.; Pourshahab, B.; Rasouli, H. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of); Hosseini Pooya, S. M.; Orouji, T. [Radiation Application Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of)

    2014-05-15

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  19. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  20. RD50 Collaboration overview: Development of new radiation hard detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kuehn, S., E-mail: susanne.kuehn@cern.ch

    2016-07-11

    Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors. - Highlights: • The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments. • The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems. • Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC. • The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors. • New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.

  1. Development of ITER diagnostics: Neutronic analysis and radiation hardness

    Energy Technology Data Exchange (ETDEWEB)

    Vukolov, Konstantin, E-mail: vukolov_KY@nrcki.ru; Borisov, Andrey; Deryabina, Natalya; Orlovskiy, Ilya

    2015-10-15

    Highlights: • Problems of ITER diagnostics caused by neutron radiation from hot DT plasma considered. • Careful neutronic analysis is necessary for ITER diagnostics development. • Effective nuclear shielding for ITER diagnostics in the 11th equatorial port plug proposed. • Requirements for study of radiation hardness of diagnostic elements defined. • Results of optical glasses irradiation tests in a fission reactor given. - Abstract: The paper is dedicated to the problems of ITER diagnostics caused by effects of radiation from hot DT plasma. An effective nuclear shielding must be arranged in diagnostic port plugs to meet the nuclear safety requirements and to provide reliable operation of the diagnostics. This task can be solved with the help of neutronic analysis of the diagnostics environment within the port plugs at the design stage. Problems of neutronic calculations are demonstrated for the 11th equatorial port plug. The numerical simulation includes the calculations of neutron fluxes in the port-plug and in the interspace. Options for nuclear shielding, such as tungsten collimator, boron carbide and water moderators, stainless steel and lead screens are considered. Data on neutron fluxes along diagnostic labyrinths allow to define radiation hardness requirements for the diagnostic components and to specify their materials. Options for windows and lenses materials for optical diagnostics are described. The results of irradiation of flint and silica glasses in nuclear reactor have shown that silica KU-1 and KS-4V retain transparency in visible range after neutron fluence of 10{sup 17} cm{sup −2}. Flints required for achromatic objectives have much less radiation hardness about 5 × 10{sup 14} n/cm{sup 2}.

  2. Crystallization method employing microwave radiation

    Energy Technology Data Exchange (ETDEWEB)

    Chu, P; Dwyer, F G; Vartuli, J C

    1992-12-01

    This invention relates to a method of crystallizing materials from aqueous crystallization media. Zeolite materials, both natural and synthetic, have been demonstrated in the past to have catalytic properties for various types of hydrocarbon conversion. Certain zeolitic materials are ordered, porous crystalline metallosilicates having a definite crystalline structure as determined by X-ray diffraction within which there are a number of smaller cavities which may be interconnected by a number of still smaller channels or pores. These cavities and pores are uniform in size within a specific zeolite material. Since the dimensions of these pores are such as to accept for adsorption molecules of certain dimensions while rejecting those of large dimensions, these materials have come to be known as molecular sieves and are utilized in a variety of ways to take advantage of these properties. (author). 3 tabs.

  3. Crystallization method employing microwave radiation

    International Nuclear Information System (INIS)

    Chu, P.; Dwyer, F.G.; Vartuli, J.C.

    1992-01-01

    This invention relates to a method of crystallizing materials from aqueous crystallization media. Zeolite materials, both natural and synthetic, have been demonstrated in the past to have catalytic properties for various types of hydrocarbon conversion. Certain zeolitic materials are ordered, porous crystalline metallosilicates having a definite crystalline structure as determined by X-ray diffraction within which there are a number of smaller cavities which may be interconnected by a number of still smaller channels or pores. These cavities and pores are uniform in size within a specific zeolite material. Since the dimensions of these pores are such as to accept for adsorption molecules of certain dimensions while rejecting those of large dimensions, these materials have come to be known as molecular sieves and are utilized in a variety of ways to take advantage of these properties. (author). 3 tabs

  4. The hardness of synthetic products obtained from cooled and crystallized basaltic melts (in Romanian

    Directory of Open Access Journals (Sweden)

    Daniela Ogrean

    2001-04-01

    Full Text Available The Hardness of Synthetic Products Obtained from Cooled and Crystallized Basaltic Melts. Hardness is one of the main properties of the products obtained from cooled and crystallized basaltic melts under a controlled thermal regime. It influences the abrasion tear resistance of the resulted material. The microhardness measurements on the samples (bricks, boards, gutters, armour plates, tubes indicated Vickers hardness value between 757–926 for the materials obtained from Şanovita basalts (Timiş district and between 539–958 respectively, in case of the Racoş basalts (Braşov district. There is a certain variation of the hardness within the same sample, in various measurement points, within the theoretical limits of the hardnesses of the pyroxenes and that of the spinels.

  5. Design parameters of transmission curved crystal spectrometer for hard X-ray diagnoses

    International Nuclear Information System (INIS)

    Qian Feng; Cao Leifeng; Zhou Weimin; Zhao Zongqing; Gu Yuqiu; Yan Yonghong; Wei Lai; Xiao Shali

    2013-01-01

    The high resolving measurement of hard X-ray spectra generated in laser-produced plasma is usually performed using a cylindrically curved crystal spectrometer. In this paper, theoretical analysis and numerical simulation are performed to investigate the dependence of the energy range and resolving power on various design parameters, including crystal bending radius, source to crystal standoff distance, source size, location of the detector, etc. The investigation provides a means to design and develop cylindrically transmission curved crystal spectrometer which is used in hard X-ray diagnostics. The results show that crystal bending radius has a great influence on energy range of spectra and resolving power, and the separation between the spectral lines increases with the distance behind the focal circle faster than the line width, resulting in increased resolving power with distance. (authors)

  6. Radiation hardness of superconducting magnet insulation materials for FAIR

    International Nuclear Information System (INIS)

    Seidl, Tim

    2013-03-01

    This thesis focuses on radiation degradation studies of polyimide, polyepoxy/glass-fiber composites and other technical components used, for example, in the superconducting magnets of new ion accelerators such as the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz Center of Heavy Ion Research (GSI) in Darmstadt. As accelerators are becoming more powerful, i.e., providing larger energies and beam intensities, the potential risk of radiation damage to the components increases. Reliable data of the radiation hardness of accelerator materials and components concerning electrical, thermal and other technical relevant properties are of great interest also for other facilities such as the Large Hadron Collider (LHC) of CERN. Dependent on the position of the different components, induced radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles. Although the number of heavy fragments of the initial projectiles is small compared to neutrons, protons, or light fragments (e.g. ? particles), their large energy deposition can induce extensive damage at rather low fluences (dose calculations show that the contribution of heavy ions to the total accumulated dose can reach 80 %). For this reason, defined radiation experiments were conducted using different energetic ion beams (from protons to uranium) and gamma radiation from a Co-60 source. The induced changes were analyzed by means of in-situ and ex-situ analytical methods, e.g. ultraviolet-visible and infrared spectroscopy, residual gas analysis, thermal gravimetric analysis, dielectric strength measurements, measurements of low temperature thermal properties, and performance tests. In all cases, the radiation induces a change in molecular structure as well as loss of functional material properties. The amount of radiation damage is found to be sensitive to the used type of ionizing radiation and the long term stability of the materials is

  7. Radiation-hard/high-speed parallel optical links

    Energy Technology Data Exchange (ETDEWEB)

    Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

    2016-09-21

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  8. Radiation hardness of WLS fibres for the ATLAS Tile Calorimeter

    CERN Document Server

    David, M; Maio, A

    2007-01-01

    In this document we present the data obtained in the irradiation in a Co-60 source of WLS fibers for the TileCal calorimeter. The optical, mechanical and radiation hardness properties of these fibers were developed in close contact with three producers: Bicron, Kuraray and Pol.Hi.Tech. The results on the degradation of the light output and attenuation length from five irradiations are presented. The fibers were irradiated with a total dose at least 3 times higher than the dose predicted for 10 years of operation of LHC at nominal luminosity.

  9. Radiation induced color in topaz crystals

    International Nuclear Information System (INIS)

    Castagnet, A.C.; Rocca, H.C.C.; Rostilato, M.E.C.M.

    1989-08-01

    The presence of defects and impurities in the crystal lattice alters the eletric field distribution within the crystal, allowing the electrons to occupy energy levels in the forbbiden band. Ionizing radiation supply the required energy to permit the electrons originaly bound to lattice atoms, to occupy effectively those intermediate levels, forming color centers. Dependig upon the nature and energy of the radiation, it is possible to produce defects in regions of the crystal, generating color centers. Based on these premises, a technique to induce color in originally colorless topaz, by using the IEA-R1 nuclear reactor, was developed at Engineering and Industrial Application Department (TE). Samples were irradiated inside iron capsules coated with cadmium foils. The iron, and principaly the cadmium, absorb the thermal neutrons that could activate crystal impurities generating long-lived radioisotopes. The epithermal neutrons that overpass the iron and cadmium barriers interact with the crystal atoms, causing lattice defects which give rise to color center, by subsequent ionization processes. The procedure used at TE induces permanent blue color, in natural colorless topaz. (author) [pt

  10. Radiation effects in corundum single crystals

    International Nuclear Information System (INIS)

    Gevorkyan, V.A.; Harutunyan, V.V.; Hakhverdyan, E.A.

    2005-01-01

    On the basis of new experimental results and analysis of publications it is shown that in the lattice of corundum crystals the high-energy particles create stable structural defects due to knocking out of atoms from normal sites of the anionic sublattice; this leads to the formation of F and F '+ centers as well as to other complex [Al i '+ F] type color centers. The essence of 'radiation memory' effect in corundum single crystals is that the high-energy particles irradiation, annealing at high temperatures and additional irradiation by X-rays result in the restoration of some spectral bands of the optical absorption in the range 200-650 nm

  11. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  12. Prototype for a Radiation Hard Upgrade to the ATLAS ZDC

    CERN Document Server

    Phipps, Michael William; The ATLAS collaboration

    2017-01-01

    Increases in luminosity and collision energy at the LHC challenge the radiation hardness of detectors located along the beamline. This problem is especially acute for the Zero Degree Calorimeters (ZDCs) in ATLAS, which are exposed to around 10^{10} rad/yr, rendering the current version of the detector inviable during p+p running. To address this shortcoming and allow for important triggers and potential access to low-x physics, we designed a prototype detector that replaces quartz radiator material with a circulating, liquid hydrocarbon. It also features a dual-stage wavelength shifting scheme to transport light to silicon photo-multipliers, as well as both transverse and longitudinal segmentation to study the shower development in two dimensions. Design considerations, results from an SPS beam test and comparisons to GEANT simulation will be presented.

  13. Channeling and radiation in periodically bent crystals

    CERN Document Server

    Korol, Andrey V; Greiner, Walter

    2014-01-01

    The development of coherent radiation sources for sub-angstrom wavelengths - i.e. in the hard X-ray and gamma-ray range -  is a challenging goal of modern physics. The availability of such sources will have many applications in basic science, technology and medicine, and, in particular, they may have a revolutionary impact on nuclear and solid state physics, as well as on the life sciences. The present state-of-the-art lasers are capable of emitting electromagnetic radiation from the infrared to the ultraviolet, while free electron lasers (X-FELs) are now entering the soft X-ray region. Moving further, i.e. into the hard X and/or gamma ray band, however, is not possible without new approaches and technologies.   In this book we introduce and discuss one such novel approach -the radiation formed in a Crystalline Undulator - whereby electromagnetic radiation is generated by a bunch of ultra-relativistic particles channeling through a periodically bent crystalline structure. Under certain conditions, such a d...

  14. Radiation hardness studies for DEPFETs in Belle II

    International Nuclear Information System (INIS)

    Ritter, Andreas

    2014-01-01

    The study of CP violation requires dedicated detectors and accelerators. At KEK, the High Energy Accelerator Research Organization located in Tsukuba, Japan, an upgrade of the present accelerator KEKB and its detector is in progress. For this new Belle II detector, a new vertex system will be installed, consisting of a silicon strip detector (SVD) and a pixel detector (PXD). The PXD exhibits eight million pixels, each of them made of Depleted p-channel Field Effect Transistors (DEPFETs). During the operation of Belle II various machine- as well as luminosity-related background processes affect the device performance of the DEPFET through radiation damage. As a Metal-Oxide-Semiconductor (MOS) device, the DEPFET is affected by ionizing radiation damage as well as by damages to the silicon bulk itself. The major part of the radiation damage has its origin in the creation of electrons and positrons near the interaction point. Therefore, the hardness factor of electrons of relevant energy was investigated in this work. With this quantity the damage by electrons could be compared to the damage inflicted by neutrons. Neutron irradiations were performed with DEPFETs and related silicon material. The effects of leakage current increase and type inversion were studied. As the electron hardness investigation indicates, the bulk damage done to the DEPFET is small in comparison to the impact on the silicon dioxide layer of the device. Ionizing radiation results in a build-up of oxide charge, thus changing the device characteristics. Especially the threshold voltage of the DEPFET is shifted to more negative values. This shift has to be compensated during the operation of Belle II and is limited by device and system constraints, thus an overall small shift is desired. The changes in the device characteristics were investigated for the two gate electrodes of the DEPFET with respect to their biasing and production related issues. With an additional layer of silicon nitride and a

  15. Channeling and radiation in periodically bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Korol, Andrey V.; Solov' yov, Andrey V.; Greiner, Walter [Frankfurt Univ. (Germany). Frankfurt Institute for Advanced Studies (FIAS)

    2013-08-01

    Authored by leading experts in the field. Self-contained introduction to the subject matter. Suitable as graduate text on the topic. The development of coherent radiation sources for sub-angstrom wavelengths - i.e. in the hard X-ray and gamma-ray range - is a challenging goal of modern physics. The availability of such sources will have many applications in basic science, technology and medicine, and, in particular, they may have a revolutionary impact on nuclear and solid state physics, as well as on the life sciences. The present state-of-the-art lasers are capable of emitting electromagnetic radiation from the infrared to the ultraviolet, while free electron lasers (X-FELs) are now entering the soft X-ray region. Moving further, i.e. into the hard X and/or gamma ray band, however, is not possible without new approaches and technologies. In this book we introduce and discuss one such novel approach: the focus is on the radiation formed in a Crystalline Undulator, where electromagnetic radiation is generated by a bunch of ultra-relativistic particles channeling through a periodically bent crystalline structure. It is shown that under certain conditions, such a device emits intensive spontaneous monochromatic radiation and may even reach the coherence of laser light sources. Readers will be presented with the underlying fundamental physics and be familiarized with the theoretical, experimental and technological advances made during the last one and a half decades in exploring the various features of investigations into crystalline undulators. This research draws upon knowledge from many research fields - such as materials science, beam physics, the physics of radiation, solid state physics and acoustics, to name but a few. Accordingly, much care has been taken by the authors to make the book as self-contained as possible in this respect, so as to also provide a useful introduction to this emerging field to a broad readership of researchers and scientist with

  16. Crystal-field splittings in rare-earth-based hard magnets: An ab initio approach

    Science.gov (United States)

    Delange, Pascal; Biermann, Silke; Miyake, Takashi; Pourovskii, Leonid

    2017-10-01

    We apply the first-principles density functional theory + dynamical mean-field theory framework to evaluate the crystal-field splitting on rare-earth sites in hard magnetic intermetallics. An atomic (Hubbard-I) approximation is employed for local correlations on the rare-earth 4 f shell and self-consistency in the charge density is implemented. We reduce the density functional theory self-interaction contribution to the crystal-field splitting by properly averaging the 4 f charge density before recalculating the one-electron Kohn-Sham potential. Our approach is shown to reproduce the experimental crystal-field splitting in the prototypical rare-earth hard magnet SmCo5. Applying it to R Fe12 and R Fe12X hard magnets (R =Nd , Sm and X =N , Li), we obtain in particular a large positive value of the crystal-field parameter A20〈r2〉 in NdFe12N resulting in a strong out-of-plane anisotropy observed experimentally. The sign of A20〈r2〉 is predicted to be reversed by substituting N with Li, leading to a strong out-of-plane anisotropy in SmFe12Li . We discuss the origin of this strong impact of N and Li interstitials on the crystal-field splitting on rare-earth sites.

  17. Radiation hard silicon microstrip detectors for Tevatron experiments

    International Nuclear Information System (INIS)

    Korjenevski, Sergey

    2004-01-01

    The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

  18. Radiation damage in the alkali halide crystals

    International Nuclear Information System (INIS)

    Diller, K.M.

    1975-10-01

    A general review is given of the experimental data on radiation damage in the alkali halide crystals. A report is presented of an experimental investigation of irradiation produced interstitial dislocation loops in NaCl. These loops are found to exhibit the usual growth and coarsening behaviour during thermal annealing which operates by a glide and self-climb mechanism. It is shown that the recombination of defects in these crystals is a two stage process, and that the loss of interstitials stabilized at the loops is caused by extrinsic vacancies. The theoretical techniques used in simulating point defects in ionic crystals are described. Shell model potentials are derived for all the alkali halide crystals by fitting to bulk crystal data. The fitting is supplemented by calculations of the repulsive second neighbour interactions using methods based on the simple electron gas model. The properties of intrinsic and substitutional impurity defects are calculated. The HADES computer program is used in all the defect calculations. Finally the report returns to the problems of irradiation produced interstitial defects. The properties of H centres are discussed; their structure, formation energies, trapping at impurities and dimerization. The structure, formation energies and mobility of the intermediate and final molecular defects are then discussed. The thermodynamics of interstitial loop formation is considered for all the alklai halide crystals. The nucleation of interstitial loops in NaCl and NaBr is discussed, and the recombination of interstitial and vacancy defects. The models are found to account for all the main features of the experimental data. (author)

  19. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  20. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  1. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

    2005-01-01

    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  2. Radiation at planar channeling of relativistic electrons in thick crystals

    International Nuclear Information System (INIS)

    Baier, V.N.; Katkov, V.M.; Strakhovenko, V.M.

    1983-01-01

    The distribution kinetics with respect to the transverse energy at electron channeling is discussed. The asymptotic expressions for the radiation intensity into a given collimator at electron channeling in thick crystals are derived. An optimal thickness at which the radiation output is maximal is found. The spectral distribution of the radiation intensity is analysed for the case of a single diamond crystal. (author)

  3. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    International Nuclear Information System (INIS)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-01-01

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10 6 ) photonic crystal cavities with low mode volume (V m  = 1.062 × (λ/n) 3 ), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10 3

  4. Radiation thermometry for semiconductor crystal growing furnaces

    International Nuclear Information System (INIS)

    Helgeland, W.

    1985-01-01

    Single crystals of silicon produced by the Czochralski process are used widely in the production of integrated circuits and other electronic devices. Recent advances in automation of industrial equipment for this process have led to the application of a dual wave band radiation thermometer. The instrument system automatically performs certain critical temperature measurements. In nonautomated equipment, these measurements require the judgement of a trained human operator. The difficulties of measuring and controlling the temperature at the critical location are discussed, especially with regard to detecting the meltdown end point and to initially establishing the correct temperature for seeding. A description is given of the customized temperature measurement system, which is based upon an existing ratio radiation thermometer. Thermometer output characteristics are described

  5. Development of crystals based in cesium iodide for application as radiation detectors

    International Nuclear Information System (INIS)

    Pereira, Maria da Conceicao Costa

    2006-01-01

    Inorganic scintillators with fast luminescence decay time, high density and high light output have been the object of studies for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. Scintillation crystals based on cesium iodide (CsI) are matters with relatively low higroscopy, high atomic number, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, the growth of pure CsI crystals, CsI:Br and CsI:Pb, using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1,5x10 -1 M to 10 -2 M and the lead (Pb) in the range of 10 -2 M to 5x10 -4 M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers micro-hardness assays, determination of the doping elements distribution along the grown crystals and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV and alpha particles from a 241 Am source, with energy of 5.54 MeV. It was obtained 13 ns to 19 ns for luminescence decay time for CsI:Br and CsI:Pb crystals. These results were very promising. The results obtained for micro-hardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma radiation and alpha particles. (author)

  6. Crystallization and diffraction analysis of the serpin IRS-2 from the hard tick Ixodes ricinus

    International Nuclear Information System (INIS)

    Kovářová, Zuzana; Chmelař, Jindřich; Šanda, Miloslav; Brynda, Jiří; Mareš, Michael; Řezáčová, Pavlína

    2010-01-01

    Cleavage of the serpin IRS-2 from the hard tick I. ricinus by contaminating proteolytic activity mimicked the specific processing of the serpin by its target protease and resulted in a more stable form of the serpin which produced crystals that diffracted to 1.8 Å resolution. IRS-2 from the hard tick Ixodes ricinus belongs to the serpin family of protease inhibitors. It is produced in the salivary glands of the tick and its anti-inflammatory activity suggests that it plays a role in parasite–host interaction. Recombinant IRS-2 prepared by heterologous expression in a bacterial system was crystallized using the hanging-drop vapour-diffusion method. The crystals belonged to the primitive tetragonal space group P4 3 and diffracted to 1.8 Å resolution. Mass-spectrometric and electrophoretic analyses revealed that IRS-2 was cleaved by contaminating proteases during crystallization. This processing of IRS-2 mimicked the specific cleavage of the serpin by its target protease and resulted in a more stable form (the so-called relaxed conformation), which produced well diffracting crystals. Activity profiling with specific substrates and inhibitors demonstrated traces of serine and cysteine proteases in the protein stock solution

  7. Radiative recombination in doped indium phosphide crystals

    International Nuclear Information System (INIS)

    Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)

    1975-01-01

    Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals

  8. Effect of intracrystalline water on micro-Vickers hardness in tetragonal hen egg-white lysozyme single crystals

    International Nuclear Information System (INIS)

    Koizumi, H; Kawamoto, H; Tachibana, M; Kojima, K

    2008-01-01

    Mechanical properties of high quality tetragonal hen egg-white lysozyme single crystals which are one type of protein crystal were investigated by the indentation method. The indentation marks were clearly observed on the crystal surface and no elastic recovery of them occurred. The value of the micro-Vickers hardness in the wet condition was estimated to be about 20 MPa at room temperature. The hardness greatly depended on the amount of intracrystalline water (mobile water) contained in the crystals. The hardness increased with increasing evaporation time to air at room temperature. It reached the maximum at about 260 MPa, which is 13 times as much as that in the wet condition. The origin of such a change in hardness was explained in terms of the dislocation mechanisms in lysozyme single crystals

  9. Shutdown and degradation: Space computers for nuclear application, verification of radiation hardness. Final report

    International Nuclear Information System (INIS)

    Eichhorn, E.; Gerber, V.; Schreyer, P.

    1995-01-01

    (1) Employment of those radiation hard electronics which are already known in military and space applications. (2) The experience in space-flight shall be used to investigate nuclear technology areas, for example, by using space electronics to prove the range of applications in nuclear radiating environments. (3) Reproduction of a computer developed for telecommunication satellites; proof of radiation hardness by radiation tests. (4) At 328 Krad (Si) first failure of radiation tolerant devices with 100 Krad (Si) hardness guaranteed. (5) Using radiation hard devices of the same type you can expect applications at doses of greater than 1 Mrad (Si). Electronic systems applicable for radiation categories D, C and lower part of B for manipulators, vehicles, underwater robotics. (orig.) [de

  10. Vickers Hardness of Diamond and cBN Single Crystals: AFM Approach

    Directory of Open Access Journals (Sweden)

    Sergey Dub

    2017-12-01

    Full Text Available Atomic force microscopy in different operation modes (topography, derivative topography, and phase contrast was used to obtain 3D images of Vickers indents on the surface of diamond and cBN single crystals with high spatial resolution. Confocal Raman spectroscopy and Kelvin probe force microscopy were used to study the structure of the material in the indents. It was found that Vickers indents in diamond has no sharp and clear borders. However, the phase contrast operation mode of the AFM reveals a new viscoelastic phase in the indent in diamond. Raman spectroscopy and Kelvin probe force microscopy revealed that the new phase in the indent is disordered graphite, which was formed due to the pressure-induced phase transformation in the diamond during the hardness test. The projected contact area of the graphite layer in the indent allows us to measure the Vickers hardness of type-Ib synthetic diamond. In contrast to diamond, very high plasticity was observed for 0.5 N load indents on the (001 cBN single crystal face. Radial and ring cracks were absent, the shape of the indents was close to a square, and there were linear details in the indent, which looked like slip lines. The Vickers hardness of the (111 synthetic diamond and (111 and (001 cBN single crystals were determined using the AFM images and with account for the elastic deformation of the diamond Vickers indenter during the tests.

  11. Radiation-hard/high-speed parallel optical links

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

    2014-01-01

    We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

  12. Study of unexplained hard photon production by electrons channelled in a crystal

    CERN Multimedia

    2002-01-01

    Our preceding experiment (NA33) designed to study the pair creation process in the interaction of high energy $\\gamma$ with a crystal in alignment conditions had revealed the existence of an unexpected peak in the radiation of 150 GeV e$^{-}$ beam for E$_{\\gamma}$/E$_{e^{-}} \\simeq$ 0.85 incident along the axis of a 185 $\\mu$m. Ge crystal and the photon multiplicity for the peak events has been measured to be M $\\simeq$ 5.7.\\\\ In NA42, in a 76 $\\mu$m crystal of the same crystallographic quality, the peak nearly disappears, and the photon multiplicity at x = 0.85 is only M $\\simeq$ 2.0. \\\\ The thickness dependence of the effect shows that the extrapolated multiplicity in the peak in a very thin crystal tends to unity. The high energy radiation peak emitted by axially channeled electrons in a thick crystal is then interpreted by the radiation cooling mechanism. \\\\ The extrapolation to zero thickness of these results will allow us to extract from the data the single $\\gamma$ radiation spectrum. The comparison o...

  13. Chronic radiation effects on dental hard tissue (''radiation carries''). Classification and therapeutic strategies

    International Nuclear Information System (INIS)

    Groetz, K.A.; Brahm, R.; Al-Nawas, B.; Wagner, W.; Riesenbeck, D.; Willich, N.; Seegenschmiedt, M.H.

    2001-01-01

    Objectives: Since the first description of rapid destruction of dental hard tissues following head and neck radiotherapy 80 years ago, 'radiation caries' is an established clinical finding. The internationally accepted clinical evaluation score RTOG/EORTC however is lacking a classification of this frequent radiogenic alteration. Material and Methods: Medical records, data and images of radiation effects on the teeth of more than 1,500 patients, who underwent periradiotherapeutic care, were analyzed. Macroscopic alterations regarding the grade of late lesions of tooth crowns were used for a classification into 4 grades according to the RTOG/EORTC guidelines. Results: No early radiation effects were found by macroscopic inspection. In the first 90 days following radiotherapy 1/3 of the patients complained of reversible hypersensitivity, which may be related to a temporary hyperemia of the pulp. It was possible to classify radiation caries as a late radiation effect on a graded scale as known from RTOG/EORTC for other organ systems. This is a prerequisite for the integration of radiation caries into the international nomenclature of the RTOG/EORTC classification. Conclusions: The documentation of early radiation effects on dental hard tissues seems to be neglectable. On the other hand the documentation of late radiation effects has a high clinical impact. The identification of an initial lesion at the high-risk areas of the neck and incisal part of the tooth can lead to a successful therapy as a major prerequisite for orofacial rehabilitation. An internationally standardized documentation is a basis for the evaluation of the side effects of radiooncotic therapy as well as the effectiveness of protective and supportive procedures. (orig.) [de

  14. Low-Temperature Crystal Structures of the Hard Core Square Shoulder Model

    Directory of Open Access Journals (Sweden)

    Alexander Gabriëlse

    2017-11-01

    Full Text Available In many cases, the stability of complex structures in colloidal systems is enhanced by a competition between different length scales. Inspired by recent experiments on nanoparticles coated with polymers, we use Monte Carlo simulations to explore the types of crystal structures that can form in a simple hard-core square shoulder model that explicitly incorporates two favored distances between the particles. To this end, we combine Monte Carlo-based crystal structure finding algorithms with free energies obtained using a mean-field cell theory approach, and draw phase diagrams for two different values of the square shoulder width as a function of the density and temperature. Moreover, we map out the zero-temperature phase diagram for a broad range of shoulder widths. Our results show the stability of a rich variety of crystal phases, such as body-centered orthogonal (BCO lattices not previously considered for the square shoulder model.

  15. Creation of radiation defects in KCl crystals

    International Nuclear Information System (INIS)

    Lushchik, A.Ch.; Pung, L.A.; Khaldre, Yu.Yu.; Kolk, Yu.V.

    1981-01-01

    Optical and EPR methods were used to study the creation of anion and cation Frenkel defects in KCl crystals irradiated by X-ray and VUV-radiation. The decay of excitons with the creation of charged Frenkel defects (α and I centres) was detected and investigated at 4.2 K. The decay of excitons as well as the recombination of electrons with self-trapped holes leads to the creation of neutral Frenkel defects (F and H centres). The creation of Cl 3 - and Vsub(F) centres (cation vacancy is a component of these centres) by X-irradiation at 80 K proves the possibility of cation defects creation in KCl [ru

  16. On electromagnetic radiation of ultrarelativistic electrons in crystals

    International Nuclear Information System (INIS)

    Podgoretskij, M.I.

    1977-01-01

    Electromagnetic radiation is considered caused by ultrarelativistic channeling electrons moving inside cylindrical regions formed with nuclear heat oscillations of a crystal lattice. An energy asymmetry is predicted for electrons and positrons, generated by γ-quanta falling to a crystal along the crystallographic axes. A possible connection of the above mentioned radiation with the anomalous multiphoton Schein showers is discussed

  17. Effect of γ-radiation on crystallization of polycaprolactone

    International Nuclear Information System (INIS)

    Zhu Guangming; Xu, Qianyong; Qin Ruifeng; Yan Hongxia; Liang Guozheng

    2005-01-01

    The crystallization behavior of radiation cross-linked poly(ε-caprolactone) (PCL) was studied by DSC at different cooling rates. The crystallization process was analyzed by the Ozawa equation and the Mo-Zhishen method that is developed from combining the Avrami equation and the Ozawa equation. It was concluded that the crystallization of radiation crosslinked PCL is governed by heterogeneous nucleation and single-dimension growth; the crystal fraction and rates of crystallization are related to the radiation dose and degree of cross-linking; the relationship between relative crystallinity and time follows the Ozawa equation: The higher the degree of crosslinking, the less the crystal velocity constant. The activation energy of crystallization for irradiated PCL is between 65 and 54kJ/mol

  18. Radiation-shielded double crystal X-ray monochromator for JET

    International Nuclear Information System (INIS)

    Barnsley, R.; Morsi, H.W.; Rupprecht, G.; Kaellne, E.

    1989-01-01

    A double crystal X-ray monochromator for absolute wavelength and intensity measurements with very effective shielding of its detector against neutrons and hard X-rays was brought into operation at JET. Fast wavelength scans were taken of impurity line radiation in the wavelength region from about 0.1 nm to 2.3 nm, and monochromatic as well as spectral line scans, for different operational modes of JET. (author) 5 refs., 4 figs

  19. Comptonization of low-frequency radiation in accretion disks Angular distribution and polarization of hard X-ray radiation

    International Nuclear Information System (INIS)

    Suniaev, R.A.; Titarchuk, L.G.

    1984-01-01

    Analytical consideration is given to the comptonization of photons and its effects on the radiation emitted from accretion disks of compact X-ray sources, such as black holes and neutron stars. Attention is given to the photon distribution during escape from the disk, the angular distribution of hard radiation from the disk, the polarization of hard radiation and the electron temperature distribution over the optical depth. It is shown that the hard radiation spectrum is independent of the low-frequency photon source distribution. The angular distribution and polarization of the outgoing X-rays are a function of the optical depth. A Thomson approximation is used to estimate the angular distribution of the hard radiation and the polarization over the disk. The polarization results are compared with OSO-8 satellite data for Cyg X-1 and show good agreement at several energy levels. 17 references

  20. Effect of gamma radiation on micromechanical hardness of lead-free solder joint

    Energy Technology Data Exchange (ETDEWEB)

    Paulus, Wilfred [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Yusoff, Wan Yusmawati Wan [Universiti Pertahanan Nasional Malaysia, Kem Sg. Besi, 57000 Kuala Lumpur (Malaysia)

    2015-09-25

    Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

  1. Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

    CERN Document Server

    Steinbrueck, Georg

    2012-01-01

    Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

  2. Crystal nucleation in binary hard-sphere mixtures: the effect of order parameter on the cluster composition

    NARCIS (Netherlands)

    Ni, R.; Smallenburg, F.; Filion, L.C.; Dijkstra, M.

    2011-01-01

    We study crystal nucleation in a binary mixture of hard spheres and investigate the composition and size of the (non)critical clusters using Monte Carlo simulations. In order to study nucleation of a crystal phase in computer simulations, a one-dimensional order parameter is usually defined to

  3. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  4. Development of radiation hard components for ITER blanket remote handling system

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Makiko, E-mail: saito.makiko@jaea.go.jp; Anzai, Katsunori; Maruyama, Takahito; Noguchi, Yuto; Ueno, Kenichi; Takeda, Nobukazu; Kakudate, Satoshi

    2016-11-01

    Highlights: • Clarify the components that will degrade by gamma ray irradiation. • Perform the irradiation tests to BRHS components. • Optimize the materials to increase the radiation hardness. - Abstract: The ITER blanket remote handling system (BRHS) will be operated in a high radiation environment (250 Gy/h max.) and must stably handle the blanket modules, which weigh 4.5 t and are more than 1.5 m in length, with a high degree of position and posture accuracy. The reliability of the system can be improved by reviewing the failure events of the system caused by high radiation. A failure mode and effects analysis (FMEA) identified failure modes and determined that lubricants, O-rings, and electric insulation cables were the dominant components affecting radiation hardness. Accordingly, we tried to optimize the lubricants and cables of the AC servo motors by using polyphenyl ether (PPE)-based grease and polyether ether ketone (PEEK), respectively. Materials containing radiation protective agents were also selected for the cable sheaths and O-rings to improve radiation hardness. Gamma ray irradiation tests were performed on these components and as a result, a radiation hardness of 8 MGy was achieved for the AC servo motors. On the other hand, to develop the radiation hardness and BRHS compatibility furthermore, the improvement of materials of cable and O ring were performed.

  5. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  6. Study of hard braking x-ray radiation on the radiation-beam complex ''TEMP''

    International Nuclear Information System (INIS)

    Batrakov, A.B.; Glushko, E.G.; Egorov, A.M.; Zinchenko, A.A.; Litvinenko, V.V.; Lonin, Yu.F.; Ponomarev, A.G.; Rybka, A.V.; Fedotov, S.I.; Uvarov, V.T.

    2015-01-01

    A calculation over of basic parameters of the hard brake x-rayed radiation for the microsecond accelerating of relativistic electronic beam T EMP . Optimization of converters is conducted for these aims. Maximal doses are experimentally got brake x-rayed radiation on beam-radiation complex T EMP . The diagrams of orientation of the brake x-rayed radiation are taken off depending on energies of bunches and forms of electrodes.

  7. Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

    International Nuclear Information System (INIS)

    Basfar, A.A.

    1995-01-01

    This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

  8. Radiation Hard and High Light Yield Scintillator Search for CMS Phase II Upgrade

    CERN Document Server

    Tiras, Emrah

    2015-01-01

    The CMS detector at the LHC requires a major upgrade to cope with the higher instantaneous luminosity and the elevated radiation levels. The active media of the forward backing hadron calorimeters is projected to be radiation-hard, high light yield scintillation materials or similar alternatives. In this context, we have studied various radiation-hard scintillating materials such as Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), High Efficiency Mirror (HEM) and quartz plates with various coatings. The quartz plates are pure Cerenkov radiators and their radiation hardness has been confirmed. In order to increase the light output, we considered organic and inorganic coating materials such as p-Terphenyl (pTp), Anthracene and Gallium-doped Zinc Oxide (ZnO Ga) that are applied as thin layers on the surface of the quartz plates. Here, we present the results of the related test beam activities, laboratory measurements and recent developments.

  9. Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

    CERN Document Server

    Cerjan, C J

    2000-01-01

    The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

  10. Effect of radiation on the crystals of polyethylene and paraffins

    International Nuclear Information System (INIS)

    Ungar, G.; Grubb, D.T.; Keller, A.

    1980-01-01

    Paraffins were irradiated with electrons in the electron microscope. The electron microscopic image and the electron diffraction patterns were followed as a function of dose. The objectives were: (a) to establish a connection between the 'polyethylene-type' and 'paraffin-like' behaviour and (b) to identify the phase segregation, by visual means. Increasing chain length, increasing dose rate and decreasing temperature individually and in combination, were found to favour the 'polyethylene-type' behaviour (crystal destruction through increasing lattice defects) while the reverse trend of the above three variables favoured the 'paraffin-like' behaviour (phase-segregated damaged and undamaged species). Segregated phases could in some circumstances be identified as non-diffracting 'droplets' within a crystalline matrix, with the lattice hardly affected, in the electron microscopic image. These droplets remain constant in number but increase in size as the irradiation progresses, the number of droplets depending on the chain length of the paraffin, on the irradiation temperature and on the dose rate. This behaviour, together with some further observations, reveals that the radiation-induced active species do not form crosslinks in situ but migrate over distances which can amount to μm. In contrast to the above, in the case of the lowest paraffin investigated, (C 23 H 48 ), the lattice became uniformly distorted as judged from the diffraction pattern, but the damage was observed to 'heal-out' with time. The results are discussed. (author)

  11. The Effect of Radiation "Memory" in Alkali-Halide Crystals

    Science.gov (United States)

    Korovkin, M. V.; Sal'nikov, V. N.

    2017-01-01

    The exposure of the alkali-halide crystals to ionizing radiation leads to the destruction of their structure, the emergence of radiation defects, and the formation of the electron and hole color centers. Destruction of the color centers upon heating is accompanied by the crystal bleaching, luminescence, and radio-frequency electromagnetic emission (REME). After complete thermal bleaching of the crystal, radiation defects are not completely annealed, as the electrons and holes released from the color centers by heating leave charged and locally uncompensated defects. Clusters of these "pre centers" lead to electric microheterogeneity of the crystal, the formation of a quasi-electret state, and the emergence of micro-discharges accompanied by radio emission. The generation of REME associated with residual defectiveness, is a manifestation of the effect of radiation "memory" in dielectrics.

  12. Some results of simulation on radiation effects in crystals

    International Nuclear Information System (INIS)

    Baier, T.; AN SSSR, Novosibirsk

    1993-05-01

    Simulations concerning radiation in oriented silicon and tungsten crystals of different thicknesses are developed. Conditions are those of experiments done at Kharkov (Ukraine) and Tomsk (Russia) with electron beams in the 1 GeV range. Systematic comparisons between experimental and simulated spectra associated to real spectrum, radiation energy and angular distribution of the photons are developed. The ability of the simulation program to describe crystal effects in the considered energy range is analysed. (author) 11 refs.; 8 figs

  13. Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

    Science.gov (United States)

    Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

    2016-01-01

    Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the radiation design margin concept with one of failure probability during a mission.

  14. Computer simulations of radiation damage in protein crystals

    International Nuclear Information System (INIS)

    Zehnder, M.

    2007-03-01

    The achievable resolution and the quality of the dataset of an intensity data collection for structure analysis of protein crystals with X-rays is limited among other factors by radiation damage. The aim of this work is to obtain a better quantitative understanding of the radiation damage process in proteins. Since radiation damage is unavoidable it was intended to look for the optimum ratio between elastically scattered intensity and radiation damage. Using a Monte Carlo algorithm physical processes after an inelastic photon interaction are studied. The main radiation damage consists of ionizations of the atoms through the electron cascade following any inelastic photon interaction. Results of the method introduced in this investigation and results of an earlier theoretical studies of the influence of Auger-electron transport in diamond are in a good agreement. The dependence of the radiation damage as a function of the energy of the incident photon was studied by computer-aided simulations. The optimum energy range for diffraction experiments on the protein myoglobin is 10-40 keV. Studies of radiation damage as a function of crystal volume and shape revealed that very small plate or rod shaped crystals suffer less damage than crystals formed like a cube with the same volume. Furthermore the influence of a few heavy atoms in the protein molecule on radiation damage was examined. Already two iron atoms in the unit cell of myoglobin increase radiation damage significantly. (orig.)

  15. Mechanical design of thin-film diamond crystal mounting apparatus for coherence preservation hard x-ray optics

    International Nuclear Information System (INIS)

    Shu, Deming; Shvyd’ko, Yuri V.; Stoupin, Stanislav; Kim, Kwang-Je

    2016-01-01

    A new thin-film diamond crystal mounting apparatus has been designed at the Advanced Photon Source (APS) for coherence preservation hard x-ray optics with optimized thermal contact and minimized crystal strain. This novel mechanical design can be applied to new development in the field of: x-ray optics cavities for hard x-ray free-electron laser oscillators (XFELOs), self-seeding monochromators for hard x-ray free-electron laser (XFEL) with high average thermal loading, high heat load diamond crystal monochromators and beam-sharing/beam-split-and-delay devices for XFEL facilities and future upgraded high-brightness coherent x-ray source in the MBA lattice configuration at the APS.

  16. Mechanical design of thin-film diamond crystal mounting apparatus for coherence preservation hard x-ray optics

    Energy Technology Data Exchange (ETDEWEB)

    Shu, Deming, E-mail: shu@aps.anl.gov; Shvyd’ko, Yuri V.; Stoupin, Stanislav; Kim, Kwang-Je [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, U.S.A (United States)

    2016-07-27

    A new thin-film diamond crystal mounting apparatus has been designed at the Advanced Photon Source (APS) for coherence preservation hard x-ray optics with optimized thermal contact and minimized crystal strain. This novel mechanical design can be applied to new development in the field of: x-ray optics cavities for hard x-ray free-electron laser oscillators (XFELOs), self-seeding monochromators for hard x-ray free-electron laser (XFEL) with high average thermal loading, high heat load diamond crystal monochromators and beam-sharing/beam-split-and-delay devices for XFEL facilities and future upgraded high-brightness coherent x-ray source in the MBA lattice configuration at the APS.

  17. Orientation acoustic radiation of electrons in silicon thick crystal

    International Nuclear Information System (INIS)

    Alejnik, A.N.; Afanas'ev, S.G.; Vorob'ev, S.A.; Zabaev, V.N.; Il'in, S.I.; Kalinin, B.N.; Potylitsyn, A.P.

    1989-01-01

    Results of measuring orientation acoustic radiation of 900 and 500 MeV electrons during their movement along crystallographic axis in thick silicon crystal (h=20 mm thickness) are presented for the first time. Analysis of obtained results shows that dynamic mechanism describes rather completely the main regularities of orientation dependence of the amplitude of acoustic signal occuring under electron motion near crystallographic axis of the crystal. Phenomena of orientation acoustic radiation can be also used for investigation of solid bodies. Orientation both of thin and rather thick monocrystals can be conducted on the basis of dynamic mechanism of elastic wave excitation in crystals

  18. Crystallization in melts of short, semiflexible hard polymer chains: An interplay of entropies and dimensions

    Science.gov (United States)

    Shakirov, T.; Paul, W.

    2018-04-01

    What is the thermodynamic driving force for the crystallization of melts of semiflexible polymers? We try to answer this question by employing stochastic approximation Monte Carlo simulations to obtain the complete thermodynamic equilibrium information for a melt of short, semiflexible polymer chains with purely repulsive nonbonded interactions. The thermodynamics is obtained based on the density of states of our coarse-grained model, which varies by up to 5600 orders of magnitude. We show that our polymer melt undergoes a first-order crystallization transition upon increasing the chain stiffness at fixed density. This crystallization can be understood by the interplay of the maximization of different entropy contributions in different spatial dimensions. At sufficient stiffness and density, the three-dimensional orientational interactions drive the orientational ordering transition, which is accompanied by a two-dimensional translational ordering transition in the plane perpendicular to the chains resulting in a hexagonal crystal structure. While the three-dimensional ordering can be understood in terms of Onsager theory, the two-dimensional transition can be understood in terms of the liquid-hexatic transition of hard disks. Due to the domination of lateral two-dimensional translational entropy over the one-dimensional translational entropy connected with columnar displacements, the chains form a lamellar phase. Based on this physical understanding, orientational ordering and translational ordering should be separable for polymer melts. A phenomenological theory based on this understanding predicts a qualitative phase diagram as a function of volume fraction and stiffness in good agreement with results from the literature.

  19. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  20. Radiation hardness on very front-end for SPD

    International Nuclear Information System (INIS)

    Cano, Xavier; Graciani, Ricardo; Gascon, David; Garrido, Lluis; Bota, Sebastia; Herms, Atila; Comerma, Albert; Riera, Jordi

    2005-01-01

    The calorimeter front-end electronics of the LHCb experiment will be located in a region, which is not protected from radiation. Therefore, all the electronics must be qualified to stand some defined radiation levels. The procedure, measurements and results of an irradiation test for every component of the very front-end SPD detector, which is part of the LHCb calorimeter are presented here. All the tested components, except a custom made ASIC, are commercially available

  1. Crystallization of hard spheres revisited. II. Thermodynamic modeling, nucleation work, and the surface of tension.

    Science.gov (United States)

    Richard, David; Speck, Thomas

    2018-06-14

    Combining three numerical methods (forward flux sampling, seeding of droplets, and finite-size droplets), we probe the crystallization of hard spheres over the full range from close to coexistence to the spinodal regime. We show that all three methods allow us to sample different regimes and agree perfectly in the ranges where they overlap. By combining the nucleation work calculated from forward flux sampling of small droplets and the nucleation theorem, we show how to compute the nucleation work spanning three orders of magnitude. Using a variation of the nucleation theorem, we show how to extract the pressure difference between the solid droplet and ambient liquid. Moreover, combining the nucleation work with the pressure difference allows us to calculate the interfacial tension of small droplets. Our results demonstrate that employing bulk quantities yields inaccurate results for the nucleation rate.

  2. Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

    International Nuclear Information System (INIS)

    Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

    2006-01-01

    We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering

  3. Radiation damage in BaF2 crystals

    International Nuclear Information System (INIS)

    Woody, C.L.; Kierstead, J.A.; Levy, P.W.; Stoll, S.

    1991-01-01

    The effects of radiation damage and recovery have been studied in BaF 2 crystals exposed to 60 Co radiation. The change in optical transmission and scintillation light output have been measured as a function of dose up to 4.7 x 10 6 rad. Although some crystals exhibit a small change in transmission, a greater change in scintillation light output is observed. Several 25 cm long crystals whichhave been irradiated show large changes in both transmission and light output. Recovery from radiation damage has been studied as a function of time and exposure to UV light. A long lived radiation induced phosphorescence has been observed in all irradiated samples which is distinct from the standard fast and slow scintillation emissions. The emission spectrum of the phosphorescence has been measured and shown a peakat ∼330 nm, near the region of the slow scintillation component. Results are given on the dependence of the decay time of the phosphorescence with dose

  4. Soft component of channeled electron radiation in silicon crystals

    International Nuclear Information System (INIS)

    Vnukov, I.E.; Kalinin, B.N.; Kiryakov, A.A.; Naumenko, G.A.; Padalko, D.V.; Potylitsyn, A.P.

    2001-01-01

    Radiation spectrum and orientation dependences of photon yield with the energy much lower than characteristic radiation energy during channeling were measured using a crystal-diffraction spectrometer. For electron drop along axis radiation intensity in the spectral range 30 ≤ ω ≤ 360 keV exceeds by nearly an order the intensity of Bremsstrahlung. The shape of radiation spectrum does not coincide with Bremsstrahlung spectrum. Radiation intensity increases gradually with photons energy growth. Bremsstrahlung spectrum from a disoriented crystalline target is described in a satisfactory manner by the currently used theory with phenomenological account of the medium polarization [ru

  5. Radiation-hard Optoelectronics for LHC detector upgrades.

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

    A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

  6. Study of fast electrons from hard-X radiation

    International Nuclear Information System (INIS)

    Arslanbekov, R.

    1995-01-01

    The goal of this thesis is the study of fast electron dynamics by means of the hard X-ray diagnosis installed in TORE SUPRA and numerical simulations. Fast electrons are generated in the plasma in the presence of the injected lower hybrid (LH) waves. Two aspects are studied in detail: the lower hybrid wave propagation and absorption in a periodically perturbed media and 2-D Fokker-Planck modelling of the fast electron dynamics in the presence of the LH power. Ripple effects on lower hybrid wave propagation and absorption are investigated using the ray tracing technique. A cylindrical equilibrium is first studied and a strong modification of the ray dynamics is predicted. Calculations are carried out in a real toroidal geometry corresponding to TORE SUPRA. It is shown that the lack of toroidal axisymmetry of the magnetic field may result in a modification of the ray evolution even if the global ray evolution is governed by the larger poloidal inhomogeneity. Simulation of LH experiments are performed for TORE SUPRA tokamak which has a large magnetic ripple (7% at the plasma edge). By considering ripple perturbation in LH current drive simulations, a better agreement is found with experimental results, in particular with the hard-X spectra and the current density profiles. In the second part of the thesis, a 2-D modeling of the fast electron dynamics in the velocity phase space is considered, based on the 2-D relativistic electron Fokker-Planck equation. Electron distribution functions obtained are used to calculate non-thermal Bremsstrahlung emission for different TORE SUPRA shots in a wide range of experimental conditions. (J.S.). 168 refs., 93 figs., 1 tab., 3 appendix

  7. Building memristive and radiation hardness TiO{sub 2}-based junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

    2014-01-01

    We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

  8. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  9. Crystallization of calcium carbonate on radiation-grafted polyethylene films

    International Nuclear Information System (INIS)

    Hou Zhengchi; Zhang Fengying; Deng Bo; Yang Haijun; Chen Shuang; Sheng Kanglong

    2006-01-01

    In biomineralization processes, nucleation and growth of inorganic crystals can be regulated by organic template molecules. This has inspired great interest in studying mimic biomineralization. In our study, growing CaCO 3 crystals on PE films functionalized through radiation-induced grafting was attempted. PE films grafted with different functional groups of different distributions and densities were used as substrates for CaCO 3 nucleation and crystal growth from Ca(HCO 3 ) 2 supersaturated solution under different environmental conditions (e.g. additives and temperature) to study the effects and mechanisms. The grafted PE films were analyzed by ATR-FTIR and AFM, and the evolution of CaCO 3 crystal formation on the grafted PE film was characterized by SEM, FTIR, and XRD. The results indicated that heterogeneous nucleation of CaCO 3 crystals was significantly facilitated by the functional groups grafted on the surface of PE films, that the morphology of CaCO 3 crystals could be controlled by distribution and density of the grafted functional groups, and that polymorphism of CaCO 3 crystal could be regulated by selection of grafting functional groups. We believe that studying the effects of chemical structures on inorganic crystallization is of great importance since radiation-induced grafting is an effective method to graft desirable functional groups onto different polymers by selected monomers, in the endeavor of developing advanced organic/inorganic composites with high performance, with a wide availability of polymers, monomers and inorganic solutions. (authors)

  10. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    Science.gov (United States)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  11. Influence of crystal shapes on radiative fluxes in visible wavelength: ice crystals randomly oriented in space

    Directory of Open Access Journals (Sweden)

    P. Chervet

    1996-08-01

    Full Text Available Radiative properties of cirrus clouds are one of the major unsolved problems in climate studies and global radiation budget. These clouds are generally composed of various ice-crystal shapes, so we tried to evaluate effects of the ice-crystal shape on radiative fluxes. We calculated radiative fluxes of cirrus clouds with a constant geometrical depth, composed of ice crystals with different shapes (hexagonal columns, bullets, bullet-rosettes, sizes and various concentrations. We considered ice particles randomly oriented in space (3D case and their scattering phase functions were calculated by a ray-tracing method. We calculated radiative fluxes for cirrus layers for different microphysical characteristics by using a discrete-ordinate radiative code. Results showed that the foremost effect of the ice-crystal shape on radiative properties of cirrus clouds was that on the optical thickness, while the variation of the scattering phase function with the ice shape remained less than 3% for our computations. The ice-water content may be a better choice to parameterize the optical properties of cirrus, but the shape effect must be included.

  12. Axial ion-electron emission microscopy of IC radiation hardness

    Science.gov (United States)

    Doyle, B. L.; Vizkelethy, G.; Walsh, D. S.; Swenson, D.

    2002-05-01

    A new system for performing radiation effects microscopy (REM) has been developed at Sandia National Laboratory in Albuquerque. This system combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional Tandem Van de Graaff-Pelletron to velocities of 1.9 MeV/amu. The electronic stopping power for heavy ions is near a maximum at this velocity, and their range is ˜20 μm in Si. These ions therefore represent the most ionizing form of radiation in nature, and are nearly ideal for performing single event effects testing of integrated circuits. Unfortunately, the energy definition of the RFQ-boosted ions is rather poor (˜ a few %), which makes problematic the focussing of such ions to the submicron spots required for REM. To circumvent this problem, we have invented ion electron emission microscopy (IEEM). One can perform REM with the IEEM system without focussing or scanning the ion beam. This is because the position on the sample where each ion strikes is determined by projecting ion-induced secondary electrons at high magnification onto a single electron position sensitive detector. This position signal is then correlated with each REM event. The IEEM system is now mounted along the beam line in an axial geometry so that the ions pass right through the electron detector (which is annular), and all of the electrostatic lenses used for projection. The beam then strikes the sample at normal incidence which results in maximum ion penetration and removes a parallax problem experienced in an earlier system. Details of both the RFQ-booster and the new axial IEEM system are given together with some of the initial results of performing REM on Sandia-manufactured radiation hardened integrated circuits.

  13. Radiation-hard silicon gate bulk CMOS cell family

    International Nuclear Information System (INIS)

    Gibbon, C.F.; Habing, D.H.; Flores, R.S.

    1980-01-01

    A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved

  14. On propagation of radiation in crystals

    International Nuclear Information System (INIS)

    Buzek, V.; Grigorijev, V.I.

    1984-11-01

    The description of the propagation of the photons in the crystal is given in the framework of a quantum field-theoretical model that can be solved exactly. Besides this, the quantum version of the Ewald-Oseen extinction theorem is proved. (author)

  15. Radiation-hard optoelectronic data transfer for the CMS tracker

    International Nuclear Information System (INIS)

    Troska, J.K.

    1999-01-01

    An introduction to the physics prospects of future experiments at the CERN Large Hadron Collider (LHC) will be given, along with the rather stringent requirements placed on their detectors by the LHC environment. Emphasis will be placed upon the particle tracking detectors, and the particular problem of their readout systems. The novel analogue optical readout scheme chosen by the Compact Muon Solenoid (CMS) experiment at the LHC will provide the basis for the thesis. The reasons for preferring analogue optical data transmission in CMS will be given, leading to a description of a generic optical readout scheme and its components. The particular scheme chosen by CMS makes as wide as possible use of commercially available components. These will be given greatest importance, with descriptions of component operation and characteristics pertinent to successful readout of the CMS tracker within the constraints of the LHC environment. Of particular concern is the effect of the LHC's harsh radiation environment on the operational characteristics of the readout system and its components. Work on radiation effects in components of the CMS tracker optical readout system will be described. This work includes the effects of ionising (gamma photon) and particle (neutron, proton, pion) irradiation on the operational characteristics and reliability of laser diodes, photodiodes, and optical fibres. System integration issues are discussed in the context of the long-term operation of the full CMS tracker readout system under laboratory conditions. It will be shown that system stability can be maintained even under widely varying ambient conditions. (author)

  16. Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

    Science.gov (United States)

    Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

    2018-02-15

    The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

  17. Synchrotron radiation gives insight in smaller and smaller crystals

    International Nuclear Information System (INIS)

    Hintsches, E.

    1983-01-01

    Scientists from the ''Max-Planck-Institut fuer Festkoerperforschung'' in Stuttgart have extended the method of X-ray analysis to study the structure of very small crystals. For the first time a crystal with 6 μm linear dimension has been successfully analysed using the synchrotron radiation from the DESY electron synchrotron at Hamburg. Thus this important method of analysis has been demonstrated to be usefull for structural studies of crystals, which are smaller by a factor of 20 than hitherto. (orig.) [de

  18. Theoretical study of Cherenkov radiation emission in anisotropic uniaxial crystals

    Energy Technology Data Exchange (ETDEWEB)

    Delbart, A; Derre, J

    1996-04-01

    A theoretical review of the Cherenkov radiation emission in uniaxial crystals is presented. The formalism of C. Muzicar in terms of energetic properties of the emitted waves are corrected. This formalism is used to simulate the Cherenkov radiation emission in a strongly birefringent sodium nitrate crystal (NaNO{sub 3}) and to investigate the consequences of the slight anisotropy of sapphire (Al{sub 2}O{sub 3}) on the design of the Optical Trigger. (author). 12 refs. Submitted to Physical Review, D (US).

  19. LHCb: Radiation hard programmable delay line for LHCb Calorimeter Upgrade

    CERN Multimedia

    Mauricio Ferre, J; Vilasís Cardona, X; Picatoste Olloqui, E; Machefert, F; Lefrançois, J; Duarte, O

    2013-01-01

    This poster describes the implementation of a SPI-programmable clock delay chip based on a Delay Locked Loop (DLL) in order to shift the phase of the LHC clock (25 ns) in steps of 1ns, with a 4ps jitter and 18ps of DNL. The delay lines will be integrated into ICECAL, the LHCb calorimeter front-end ASIC in the near future. The stringent noise requirements on the ASIC imply minimizing the noise contribution of digital components. This is accomplished by implementing the DLL in differential mode. To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. This 5.7 mm2 chip has been implemented in CMOS 0.35um technology.

  20. Recent results on the development of radiation-hard diamond detectors

    CERN Document Server

    Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

  1. Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

    Czech Academy of Sciences Publication Activity Database

    Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

    2001-01-01

    Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

  2. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  3. RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC

    2010-01-01

    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

  4. RD50 Status Report 2009/2010 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Moll, Michael

    2012-01-01

    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements for the upgrade of the LHC detectors. This document reports on the status of research and main results obtained in the years 2009 and 2010.

  5. Dose dependence of nano-hardness of 6H-SiC crystal under irradiation with inert gas ions

    Science.gov (United States)

    Yang, Yitao; Zhang, Chonghong; Su, Changhao; Ding, Zhaonan; Song, Yin

    2018-05-01

    Single crystal 6H-SiC was irradiated by inert gas ions (He, Ne, Kr and Xe ions) to various damage levels at room temperature. Nano-indentation test was performed to investigate the hardness change behavior with damage. The depth profile of nano-hardness for 6H-SiC decreased with increasing depth for both the pristine and irradiated samples, which was known as indentation size effect (ISE). Nix-Gao model was proposed to determine an asymptotic value of nano-hardness by taking account of ISE for both the pristine and irradiated samples. In this study, nano-hardness of the irradiated samples showed a strong dependence on damage level and showed a weak dependence on ions species. From the dependence of hardness on damage, it was found that the change of hardness demonstrated three distinguishable stages with damage: (I) The hardness increased with damage from 0 to 0.2 dpa and achieved a maximum of hardening fraction ∼20% at 0.2 dpa. The increase of hardness in this damage range was contributed to defects produced by ion irradiation, which can be described well by Taylor relation. (II) The hardness reduced rapidly with large decrement in the damage range from 0.2 to 0.5 dpa, which was considered to be from the covalent bond breaking. (III) The hardness reduced with small decrement in the damage range from 0.5 to 2.2 dpa, which was induced by extension of the amorphous layer around damage peak.

  6. Intelligent optimization models based on hard-ridge penalty and RBF for forecasting global solar radiation

    International Nuclear Information System (INIS)

    Jiang, He; Dong, Yao; Wang, Jianzhou; Li, Yuqin

    2015-01-01

    Highlights: • CS-hard-ridge-RBF and DE-hard-ridge-RBF are proposed to forecast solar radiation. • Pearson and Apriori algorithm are used to analyze correlations between the data. • Hard-ridge penalty is added to reduce the number of nodes in the hidden layer. • CS algorithm and DE algorithm are used to determine the optimal parameters. • Proposed two models have higher forecasting accuracy than RBF and hard-ridge-RBF. - Abstract: Due to the scarcity of equipment and the high costs of maintenance, far fewer observations of solar radiation are made than observations of temperature, precipitation and other weather factors. Therefore, it is increasingly important to study several relevant meteorological factors to accurately forecast solar radiation. For this research, monthly average global solar radiation and 12 meteorological parameters from 1998 to 2010 at four sites in the United States were collected. Pearson correlation coefficients and Apriori association rules were successfully used to analyze correlations between the data, which provided a basis for these relative parameters as input variables. Two effective and innovative methods were developed to forecast monthly average global solar radiation by converting a RBF neural network into a multiple linear regression problem, adding a hard-ridge penalty to reduce the number of nodes in the hidden layer, and applying intelligent optimization algorithms, such as the cuckoo search algorithm (CS) and differential evolution (DE), to determine the optimal center and scale parameters. The experimental results show that the proposed models produce much more accurate forecasts than other models

  7. Generation of ionizing radiation from lithium niobate crystals

    Science.gov (United States)

    Orlikov, L. N.; Orlikov, N. L.; Arestov, S. I.; Mambetova, K. M.; Shandarov, S. M.

    2017-01-01

    The work done experimentally explores generation of electron and x-ray radiation in the process of heating and cooling monolithic and iron-doped crystals of lithium niobate. Iron doping to the concentrations in the range of 1023 m3 was carried out by adding ferric oxide into the melt during the process of crystal growth. The research into radiation generation was performed at 1-10 Pa. The speed of heating from -10 to 1070 C was 10-20 degrees a minute. Current pulses appeared at 17, 38, 56, 94, 98, 100, 105, 106, 1070 C with the interval of 1-3 minutes. The obtained electron current increased in direct proportion to the crystal surface area. The maximum current was 3mA at the design voltage 11 kV on the crystal with 14,5x10,5x10 mm3 surface area. The article describes the possibility to control the start of generation by introducing priming pulse. The results achieved are explained by the domain repolarization while heating the crystal and the appearance of electric field local strength. Bias and overcharge currents contribute to the appearance of electric strength, which stimulates breakdown and plasma formation. X-ray radiation appears both at the stage of discharge formation and during electron deceleration on gas and target material.

  8. Coherent polarization radiation of relativistic electrons in crystals

    International Nuclear Information System (INIS)

    Morokhovskii, V.L.

    2014-01-01

    A brief narration about the history of those heated arguments and discussions around the nature of so-called parametric X-radiation, which were concluded by the recognition of the discovery the phenomenon of coherent polarization bremsstrahlung of relativistic charged particles in crystals. Some important information and comments, which stay over of notice of specialists till now are reported.

  9. Lithium niobate bulk crystallization promoted by CO2 laser radiation

    Science.gov (United States)

    Ferreira, N. M.; Costa, F. M.; Nogueira, R. N.; Graça, M. P. F.

    2012-09-01

    The crystallization induced by laser radiation is a very promising technique to promote glass/ceramic transformation, being already used to produce crystalline patterns on glass surfaces. In this work, a SiO2-Li2O-Nb2O5 glass, prepared by the sol-gel route, was submitted to CO2 laser radiation and conventional heat-treatments in order to induce the LiNbO3 crystallization. The structure and morphology of the samples prepared by both routes was analyzed as a function of exposure time, radiation power and heat-treatment temperatures by XRD, Raman spectroscopy and SEM. The results reveal a correlation between the crystallization degree of LiNbO3 particles and glass matrix with the heat treatment type and experimental parameters. An heat-treatment at 650 °C/4 h was necessary to induce crystallization in heat treatments samples while 4 W/500 s was enough for laser radiation ones, corresponding a reduction time processing of ˜14 000 s.

  10. Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

    Energy Technology Data Exchange (ETDEWEB)

    Cojocariu, L. N., E-mail: lucian.cojocariu@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); Stefan cel Mare University of Suceava (Universitatii 13, Suceava, Romania) (Romania); Placinta, V. M., E-mail: vlad-mihai.placinta@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); University POLITEHNICA of Bucharest (Splaiul Independentei 313, Bucharest, Romania) (Romania); Dumitru, L., E-mail: dlaur@nipne.ro [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania)

    2016-03-25

    A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

  11. Process and devices of detection of hard electromagnetic or particle radiations using a superconducting element

    International Nuclear Information System (INIS)

    Drukier, A.K.; Valette, Claude; Waysand, Georges.

    1975-01-01

    The invention relates to processes and systems for the detection of hard electromagnetic or particle radiations and the sensors fitted to these systems. 'Hard radiations' means those whose energy is greater than a variable threshold, depending on the applications, but always more than 5 keV. The use of these sensors and the associated systems can therefore be envisaged in radiography and also in emission gammagraphy in the biological, anatomic and medical fields. In these processes, in order to detect a photon or a radiation particle, use is made of the transition phenomenon of a homogeneous grain of superconducting material of the first kind, from the metastable superconducting state to the normal state, under the effect of a photoelectron ejected by the impact of the photon or of the particle on the grain of superconducting material [fr

  12. Performance And Radiation Hardness Of The Atlas/sct Detector Module

    CERN Document Server

    Eklund, L

    2003-01-01

    The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

  13. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  14. R and D on Radiation Hard Active Media Based on Quartz Plates

    CERN Document Server

    Onel, Yasar

    2014-01-01

    The need for radiation-hard active media in particle detectors is prominently dictated by the future colliders and the future operations of the Large Hadron Collider. The areas of implementation range from calorimetry to beamline instrumentation to specialized forward detectors e.g. luminosity monitors. In this context, we developed the idea of utilizing quartz plates with various surface coating properties as the active medium for such detectors. Plain quartz is a pure Cerenkov radiator which has quite limited photostatistics. In order to improve the efficiency of the photodetection, various methods were investigated including radiation hard wavelength shifters, p-terphenyl or 4pct gallium doped zinc oxide. The readout options include direct coupling of the photodetector to the quartz plate, or fibers. We have studied various geometries and readout options and constructed calorimeter prototypes. Here we report on the results of the previous tests, and the recent developments, which enable several factors of ...

  15. Variability of the contrail radiative forcing due to crystal shape

    Science.gov (United States)

    Markowicz, K. M.; Witek, M. L.

    2011-12-01

    The aim of this study is to examine the influence of particles' shape and particles' optical properties on the contrail radiative forcing. Contrail optical properties in the shortwave and longwave range are derived using a ray-tracing geometric method and the discrete dipole approximation method, respectively. Both methods present good correspondence of the single scattering albedo and the asymmetry parameter in a transition range (3-7μm). We compare optical properties defined following simple 10 crystals habits randomly oriented: hexagonal plates, hexagonal columns with different aspect ratio, and spherical. There are substantial differences in single scattering properties between ten crystal models investigated here (e.g. hexagonal columns and plates with different aspect ratios, spherical particles). The single scattering albedo and the asymmetry parameter both vary up to 0.1 between various crystal shapes. Radiative forcing calculations were performed using a model which includes an interface between the state-of-the-art radiative transfer model Fu-Liou and databases containing optical properties of the atmosphere and surface reflectance and emissivity. This interface allows to determine radiative fluxes in the atmosphere and to estimate the contrail radiative forcing for clear- and all-sky (including natural clouds) conditions for various crystal shapes. The Fu-Liou code is fast and therefore it is suitable for computing radiative forcing on a global scale. At the same time it has sufficiently good accuracy for such global applications. A noticeable weakness of the Fu-Liou code is that it does not take into account the 3D radiative effects, e.g. cloud shading and horizontal. Radiative transfer model calculations were performed at horizontal resolution of 5x5 degree and time resolution of 20 min during day and 3 h during night. In order to calculate a geographic distribution of the global and annual mean contrail radiative forcing, the contrail cover must be

  16. An adaptive crystal bender for high power synchrotron radiation beams

    International Nuclear Information System (INIS)

    Berman, L.E.; Hastings, J.B.

    1992-01-01

    Perfect crystal monochromators cannot diffract x-rays efficiently, nor transmit the high source brightness available at synchrotron radiation facilities, unless surface strains within the beam footprint are maintained within a few arcseconds. Insertion devices at existing synchrotron sources already produce x-ray power density levels that can induce surface slope errors of several arcseconds on silicon monochromator crystals at room temperature, no matter how well the crystal is cooled. The power density levels that will be produced by insertion devices at the third-generation sources will be as much as a factor of 100 higher still. One method of restoring ideal x-ray diffraction behavior, while coping with high power levels, involves adaptive compensation of the induced thermal strain field. The design and performance, using the X25 hybrid wiggler beam line at the National Synchrotron Light Source (NSLS), of a silicon crystal bender constructed for this purpose are described

  17. Radiation silver paramagnetic centers in a beta-alumina crystal

    International Nuclear Information System (INIS)

    Badalyan, A.G.; Zhitnikov, R.A.

    1985-01-01

    Silver paramagnetic centers in a β-alumina crystal, formed after X-ray radiation at 77 K, are investigated by the EPR method. Silver enters the β-alumina crystal, substituting sodium and potassium ions in a mirror plane. Crystals with substitution from 0.1 to 100% of alkali metal ions by Ag + ions are investigated. Silver atomic centers (Ag 0 -centers), formed by electron capture with the Ag + ion, are firstly detected and investigated in the β-alumina. Hole Ag 2+ -centers are investigated and detected in crystals with high concentration of Ag + . By studying the orientation dependence of a g-factor it is established that hole capture by the Ag + ion is accompanied by Ag 2+ ion displacement from the position, Ag + being primarity taken up (Beavers-Roth or anti- Beavers-Roth) to the position between two oxygen ions in the mirror plane

  18. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  19. Experimental studies on radiation damages of CsI(Tl) crystals

    International Nuclear Information System (INIS)

    He Jingtang; Mao Yufang; Dong Xiaoli; Chen Duanbao; Li Zuhao

    1997-01-01

    The results of experimental studies on radiation damage of CsI(Tl) crystal were reported. There are radiation damage effects on CsI(Tl) crystal. Experimental studies on recovery of damaged CsI(Tl) crystals were made. It seems that after heating at 200 degree C for 4 hours, the damaged crystals could be recovered completely

  20. Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Qingyu

    2008-10-17

    The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

  1. Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

    International Nuclear Information System (INIS)

    Wei, Qingyu

    2008-01-01

    The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

  2. Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

    2015-08-28

    The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

  3. RD50 recent results: Development of radiation hard sensors for SLHC

    CERN Document Server

    Macchiolo, Anna

    2009-01-01

    The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector designs (Device Engineering) as 3D sensors, thin sensors and n-in-p sensors. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) identification of defects responsible for long term annealing, (ii) charge collection efficiency of irradiated planar devices, in particular n-in-p microstrip detectors and epitaxial diodes, (iii) charge collection efficiency of double-type column 3D detectors, (iv) comparison of the performances of FZ and MCZ structures under mixed irradiation.

  4. Development and Studies of Novel Microfabricated Radiation Hard Scintillation Detectors With High Spatial Resolution

    CERN Document Server

    Mapelli, A; Haguenauer, M; Jiguet, S; Renaud, P; Vico Triviño, N

    2011-01-01

    A new type of scintillation detector is being developed with standard microfabrication techniques. It consists of a dense array of scintillating waveguides obtained by coupling microfluidic channels filled with a liquid scintillator to photodetectors. Easy manipulation of liquid scintillators inside microfluidic devices allow their flushing, renewal, and exchange making the active medium intrinsically radiation hard. Prototype detectors have been fabricated by photostructuration of a radiation hard epoxy resin (SU-8) deposited on silicon wafers and coupled to a multi-anode photomultiplier tube (MAPMT) to read-out the scintillation light. They have been characterized by exciting the liquid scintillator in the 200 micrometers thick microchannels with electrons from a 90Sr yielding approximately 1 photoelectron per impinging Minimum Ionizing Particle (MIP). These promising results demonstrate the concept of microfluidic scintillating detection and are very encouraging for future developments.

  5. Hard synchrotron radiation scattering from a nonideal surface grating from multilayer X-ray mirrors

    International Nuclear Information System (INIS)

    Punegov, V.I.; Nesterets, Ya.I.; Mytnichenko, S.V.; Kovalenko, N.V.; Chernov, V.A.

    2003-01-01

    The hard synchrotron radiation scattering from a multilayer surface grating is theoretically and experimentally investigated. The numerical calculations of angular distribution of scattering intensity from X-ray mirror Ni/C are executed with use of recurrence formulae and statistical dynamical theory of diffraction. It is shown, that the essential role in formation of a diffraction pattern plays a diffuse scattering caused by structure imperfection of a multilayer grating [ru

  6. Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

    International Nuclear Information System (INIS)

    Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

    2013-06-01

    We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

  7. Radiation chemistry of plastic crystals. Final report

    International Nuclear Information System (INIS)

    Klingen, T.J.

    1979-01-01

    The primary purpose of this report is to summarize the research done under this contract over the past twelve years. Since it is manifestly impossible to provide all the details involved in this work in this report only the primary results of these studies are discussed. The detailed radiolytic mechanisms and kinetics, as well as other detailed information on the systems studied have previously been reported in the annual reports, ORO-3781-1 through 14 and in the journal articles listed in the Contract Publications section of this report. The initial purpose of this work was to study the gamma-ray induced polymerization of organo-substituted carboranes in the solid state. With time this purpose changed to understanding in detail the effects plastic crystallinity had on the overall radiolysis of materials in this type of mesomorphic state. This work included the effects of phase, charge transfer, organic substituent and the ability of the carboranes to act as electron scavengers. For clarity of presentation, the work in the various areas which was performed under this contract is reported in four separate sections: plastic crystallinity, radiation chemistry, electrooptical properties, and thermal oligomerization

  8. A Radiation-Hard Analog Memory In The AVLSI-RA Process

    International Nuclear Information System (INIS)

    Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G.; Kennedy, E.J.; Smith, R.S.; Swann, B.K.; Musser, J.A.

    1995-01-01

    A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented

  9. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  10. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  11. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  12. Radiation Induced Color Centers in a La Doped PWO Crystal

    CERN Document Server

    Deng, Qun

    1998-01-01

    This report presents result of a study on radiation induced color center densities in a La doped lead tungstate ( PWO) crystal. The creation and annihilation constants of radiation induced color centers were determined by using transmittance data measured for a PWO sample before and during Co-60 gamma ray irradiation at a dose rate of 15 rad/hr. Following a model of color center kinetics, these constants were used to calculate color center densities under irradiations at 100 rad/hr. The result was found to be in a good agreement with experimental data, indicating that this model of color center kinetics can be used to predict behavior of PWO crystals under irradiation.

  13. Fabrication of radiation detector using PbI2 crystals

    International Nuclear Information System (INIS)

    Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

    1995-01-01

    Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

  14. Role of local assembly in the hierarchical crystallization of associating colloidal hard hemispheres

    Science.gov (United States)

    Lei, Qun-li; Hadinoto, Kunn; Ni, Ran

    2017-10-01

    Hierarchical self-assembly consisting of local associations of simple building blocks for the formation of complex structures widely exists in nature, while the essential role of local assembly remains unknown. In this work, by using computer simulations, we study a simple model system consisting of associating colloidal hemispheres crystallizing into face-centered-cubic crystals comprised of spherical dimers of hemispheres, focusing on the effect of dimer formation on the hierarchical crystallization. We found that besides assisting the crystal nucleation because of increasing the symmetry of building blocks, the association between hemispheres can also induce both reentrant melting and reentrant crystallization depending on the range of interaction. Especially when the interaction is highly sticky, we observe a novel reentrant crystallization of identical crystals, which melt only in a certain temperature range. This offers another axis in fabricating responsive crystalline materials by tuning the fluctuation of local association.

  15. Channeling and radiation in periodically bent crystals. 2. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Korol, Andrey V.; Solov' yov, Andrey V. [Frankfurt Univ., Frankfurt am Main (Germany). Physics Dept.; Greiner, Walter [Frankfurt Univ., Frankfurt am Main (Germany). Frankfurt Inst. for Advanced Studies

    2014-07-01

    The development of coherent radiation sources for sub-angstrom wavelengths - i.e. in the hard X-ray and gamma-ray range - is a challenging goal of modern physics. The availability of such sources will have many applications in basic science, technology and medicine, and, in particular, they may have a revolutionary impact on nuclear and solid state physics, as well as on the life sciences. The present state-of-the-art lasers are capable of emitting electromagnetic radiation from the infrared to the ultraviolet, while free electron lasers (X-FELs) are now entering the soft X-ray region. Moving further, i.e. into the hard X and/or gamma ray band, however, is not possible without new approaches and technologies. In this book we introduce and discuss one such novel approach -the radiation formed in a Crystalline Undulator - whereby electromagnetic radiation is generated by a bunch of ultra-relativistic particles channeling through a periodically bent crystalline structure. Under certain conditions, such a device can emit intensive spontaneous monochromatic radiation and even reach the coherence of laser light sources. Readers will be presented with the underlying fundamental physics and be familiarized with the theoretical, experimental and technological advances made during the last one and a half decades in exploring the various features of investigations into crystalline undulators. This research draws upon knowledge from many research fields - such as materials science, beam physics, the physics of radiation, solid state physics and acoustics, to name but a few. Accordingly, much care has been taken by the authors to make the book as self-contained as possible in this respect, so as to also provide a useful introduction to this emerging field to a broad readership of researchers and scientist with various backgrounds. This new edition has been revised and extended to take recent developments in the field into account.

  16. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  17. Imperfection and radiation damage in protein crystals studied with coherent radiation

    International Nuclear Information System (INIS)

    Nave, Colin; Sutton, Geoff; Evans, Gwyndaf; Owen, Robin; Rau, Christoph; Robinson, Ian; Stuart, David Ian

    2016-01-01

    Coherent diffraction observations from polyhedra crystals at cryotemperature are reported. Information is obtained about the lattice strain and the changes with radiation damage. Fringes and speckles occur within diffraction spots when a crystal is illuminated with coherent radiation during X-ray diffraction. The additional information in these features provides insight into the imperfections in the crystal at the sub-micrometre scale. In addition, these features can provide more accurate intensity measurements (e.g. by model-based profile fitting), detwinning (by distinguishing the various components), phasing (by exploiting sampling of the molecular transform) and refinement (by distinguishing regions with different unit-cell parameters). In order to exploit these potential benefits, the features due to coherent diffraction have to be recorded and any change due to radiation damage properly modelled. Initial results from recording coherent diffraction at cryotemperatures from polyhedrin crystals of approximately 2 µm in size are described. These measurements allowed information about the type of crystal imperfections to be obtained at the sub-micrometre level, together with the changes due to radiation damage

  18. Imperfection and radiation damage in protein crystals studied with coherent radiation

    Energy Technology Data Exchange (ETDEWEB)

    Nave, Colin, E-mail: colin.nave@diamond.ac.uk [Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Sutton, Geoff [Wellcome Trust Centre for Human Genetics, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Evans, Gwyndaf; Owen, Robin; Rau, Christoph [Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Robinson, Ian [University College London, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Stuart, David Ian [Wellcome Trust Centre for Human Genetics, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom)

    2016-01-01

    Coherent diffraction observations from polyhedra crystals at cryotemperature are reported. Information is obtained about the lattice strain and the changes with radiation damage. Fringes and speckles occur within diffraction spots when a crystal is illuminated with coherent radiation during X-ray diffraction. The additional information in these features provides insight into the imperfections in the crystal at the sub-micrometre scale. In addition, these features can provide more accurate intensity measurements (e.g. by model-based profile fitting), detwinning (by distinguishing the various components), phasing (by exploiting sampling of the molecular transform) and refinement (by distinguishing regions with different unit-cell parameters). In order to exploit these potential benefits, the features due to coherent diffraction have to be recorded and any change due to radiation damage properly modelled. Initial results from recording coherent diffraction at cryotemperatures from polyhedrin crystals of approximately 2 µm in size are described. These measurements allowed information about the type of crystal imperfections to be obtained at the sub-micrometre level, together with the changes due to radiation damage.

  19. X-ray characterization of curved crystals for hard x-ray astronomy

    Science.gov (United States)

    Buffagni, Elisa; Bonnini, Elisa; Ferrari, Claudio; Virgilli, Enrico; Frontera, Filippo

    2015-05-01

    Among the methods to focus photons the diffraction in crystals results as one of the most effective for high energy photons. An assembling of properly oriented crystals can form a lens able to focus x-rays at high energy via Laue diffraction in transmission geometry; this is a Laue lens. The x-ray diffraction theory provides that the maximum diffraction efficiency is achieved in ideal mosaic crystals, but real mosaic crystals show diffraction efficiencies several times lower than the ideal case due to technological problems. An alternative and convenient approach is the use of curved crystals. We have recently optimized an efficient method based on the surface damage of crystals to produce self-standing uniformly curved Si, GaAs and Ge tiles of thickness up to 2-3 mm and curvature radii R down to a few meters. We show that, for curved diffracting planes, such crystals have a diffraction efficiency nearly forty times higher than the diffraction efficiency of perfect similar flat crystals, thus very close to that of ideal mosaic crystals. Moreover, in an alternative configuration where the diffracting planes are perpendicular to the curved ones, a focusing effect occurs and will be shown. These results were obtained for several energies between 17 and 120 keV with lab sources or at high energy facilities such as LARIX at Ferrara (Italy), ESRF at Grenoble (France), and ANKA at Karlsruhe (Germany).

  20. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  1. Systems for detecting and recording hard corpuscular and electromagnetic radiations using a superconducting element

    International Nuclear Information System (INIS)

    Drukier, A.K.; Valette, Claude; Waysand, Georges.

    1975-01-01

    The invention relates to systems for detecting hard X ray or gamma radiations above 5 keV in energy, intended, for example, for gammagraphy by emission in the biological, anatomic and medical fields. It describes systems of the above type which directly give the image of a radiation distribution, that is to say without intermediate processing. Another purpose of the invention is to provide the devices with main memory measuring the radiation distribution, in other words systems that display the said data for as long as the operator deems necessary and that can be reset, that is to say returned to measuring conditions, immediately. The invention makes use of the properties of type I superconductors [fr

  2. Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

    International Nuclear Information System (INIS)

    Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

    1997-01-01

    In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

  3. Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter

    International Nuclear Information System (INIS)

    Qiang, Yi; Zorn, Carl; Barbosa, Fernando; Smith, Elton

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.

  4. Investigation of classical radiation reaction with aligned crystals

    Energy Technology Data Exchange (ETDEWEB)

    Di Piazza, A., E-mail: dipiazza@mpi-hd.mpg.de [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, D-69117 (Germany); Wistisen, Tobias N.; Uggerhøj, Ulrik I. [Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark)

    2017-02-10

    Classical radiation reaction is the effect of the electromagnetic field emitted by an accelerated electric charge on the motion of the charge itself. The self-consistent underlying classical equation of motion including radiation–reaction effects, the Landau–Lifshitz equation, has never been tested experimentally, in spite of the first theoretical treatments of radiation reaction having been developed more than a century ago. Here we show that classical radiation reaction effects, in particular those due to the near electromagnetic field, as predicted by the Landau–Lifshitz equation, can be measured in principle using presently available facilities, in the energy emission spectrum of 30-GeV electrons crossing a 0.55-mm thick diamond crystal in the axial channeling regime. Our theoretical results indicate the feasibility of the suggested setup, e.g., at the CERN Secondary Beam Areas (SBA) beamlines.

  5. Scintillation and radiation damage of doped BaF2 crystals

    International Nuclear Information System (INIS)

    Gong Zufang; Xu Zizong; Chang Jin

    1992-01-01

    The emission spectra and the radiation damage of BaF 2 crystals doped Ce and Dy have been studied. The results indicate that the doped BaF 2 crystals have the intrinsic spectra of impurity besides the intrinsic spectra of BaF 2 crystals. The crystals colored and the transmissions decrease with the concentration of impurity in BaF 2 crystals after radiation by γ-ray of 60 Co. The doped Ce BaF 2 irradiated by ultraviolet has faster recover of transmissions but for doped Dy the effect is not obvious. The radiation resistance is not good as pure BaF 2 crystals

  6. Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Šagátová, Andrea, E-mail: andrea.sagatova@stuba.sk [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia); Zaťko, Bohumír; Dubecký, František [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ly Anh, Tu [Faculty of Applied Science, University of Technology VNU HCM, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Nečas, Vladimír; Sedlačková, Katarína; Pavlovič, Márius [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Fülöp, Marko [University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia)

    2017-02-15

    Highlights: • Radiation hardness of SI GaAs detectors against gamma-rays, neutrons and electrons was compared. • Good agreement was achieved between the experimental results and displacement damage factor of different types of radiation. • CCE and FWHM first slightly improved (by 1–8%) and just then degraded with the cumulative dose. • An increase of detection efficiency with cumulative dose was observed. - Abstract: Radiation hardness of semi-insulating GaAs detectors against {sup 60}Co gamma-rays, fast neutrons and 5 MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10 Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1 kGy of electrons (FWHM decreased by 3% on average) and at 10 kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140 kGy of ∼1 MeV photons, 104 kGy of 5 MeV electrons but only up to 0.576 kGy of fast (∼2 to 30 MeV) neutrons.

  7. The influence of parotid gland sparing on radiation damages of dental hard tissues.

    Science.gov (United States)

    Hey, Jeremias; Seidel, Johannes; Schweyen, Ramona; Paelecke-Habermann, Yvonne; Vordermark, Dirk; Gernhardt, Christian; Kuhnt, Thomas

    2013-07-01

    The aim of the present study was to evaluate whether radiation damage on dental hard tissue depends on the mean irradiation dose the spared parotid gland is subjected to or on stimulated whole salivary flow rate. Between June 2002 and October 2008, 70 patients with neck and cancer curatively irradiated were included in this study. All patients underwent dental treatment referring to the guidelines and recommendations of the German Society of Dental, Oral and Craniomandibular Sciences prior, during, and after radiotherapy (RT). During the follow-up period of 24 months, damages on dental hard tissues were classified according to the RTOG/EORTC guidelines. The mean doses (D(mean)) during spared parotid gland RT were determined. Stimulated whole saliva secretion flow rates (SFR) were measured before RT and 1, 6, 12, 24 months after RT. Thirty patients showed no carious lesions (group A), 18 patients developed sporadic carious lesions (group B), and 22 patients developed general carious lesions (group C). Group A patients received a D mean of 21.2 ± 11.04 Gy. Group B patients received a D(mean) of 26.5 ± 11.59 Gy and group C patients received a D(mean) of 33.9 ± 9.93 Gy, respectively. The D(mean) of group A was significantly lower than the D(mean) of group C (p dental hard tissue correlates with increased mean irradiation doses as well as decreased salivary flow rates. Parotid gland sparing resulting in a dose below 20 Gy reduces radiation damage on dental hard tissues, and therefore, the dose may act as a predictor for the damage to be expected.

  8. A hybrid model of primary radiation damage in crystals

    International Nuclear Information System (INIS)

    Samarin, S.I.; Dremov, V.V.

    2009-01-01

    The paper offers a hybrid model which combines molecular dynamics and Monte Carlo (MD+MC) methods to describe primary radiation damage in crystals, caused by particles whose energies are no higher than several tens of keV. The particles are tracked in accord with equations of motion with account for pair interaction. The model also considers particle interaction with the mean-field potential (MFP) of the crystal. Only particles involved in cascading are tracked. Equations of motion for these particles include dissipative forces which describe energy exchange between cascade particles and electrons. New particles - the atoms of the crystal in the cascade region - have stochastic parameters (phase coordinates); they are sampled by the Monte Carlo method from the distribution that describes the classic canonical ensemble of non-interacting particles subjected to the external MFP. The introduction of particle interaction with the MFP helps avoid difficulties related to crystal stability and the choice of an adequate interparticle interaction potential in the traditional MD methods. Our technique is many times as fast as the traditional MD methods because we consider only particles which are involved in cascading and apply special methods to speedup the calculation of forces by accounting for the short-range pair potential used

  9. Development of radiation-hard optical links for the CMS tracker at CERN

    International Nuclear Information System (INIS)

    Vasey, F.; Arbet-Engels, V.; Cervelli, G.; Gill, K.; Grabit, R.; Mommaert, C.; Stefanini, G.

    1998-01-01

    A radiation-hard optical link is under development for readout and control of the tracking detector in the future CMS experiment at the CERN Large Hadron Collider. The authors present the optical system architecture based on edge-emitting InGaAsP laser-diode transmitters operating at a wavelength of 1.3 microm, single mode fiber ribbons, multi-way connectors and InGaAsP in photodiode receivers. They report on radiation hardness tests of lasers, photodiodes, fibers and connectors. Increases of laser threshold and pin leakage currents with hadron fluence have been observed together with decreases in laser slope-efficiency and photodiode responsivity. Short lengths of single-mode optical fiber and multi-way connectors have been found to be little affected by radiation damage. They analyze the analog and digital performance of prototype optical links transmitting data generated at a 40 MSample/s rate. Distortion, settling time, bandwidth, noise, dynamic range and bit-error-rate results are discussed

  10. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  11. Radiation-electromagnetic effect in germanium single crystals

    International Nuclear Information System (INIS)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1980-01-01

    An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with α particles, protons, or x rays in magnetic fields up to 8 kOe. The source of α particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10 11 particles .cm -2 .sec -1 ). In the energy range 4--40 MeV the emf was practically independent of the α-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the α-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with α particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect

  12. Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

    International Nuclear Information System (INIS)

    Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

    2010-01-01

    Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

  13. Radiation hardness of silicon detectors manufactured on wafers from various sources

    International Nuclear Information System (INIS)

    Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

    1997-01-01

    Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

  14. Cryogenic and radiation-hard asic for interfacing large format NIR/SWIR detector arrays

    Science.gov (United States)

    Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

    2017-11-01

    For scientific and earth observation space missions, weight and power consumption is usually a critical factor. In order to obtain better vehicle integration, efficiency and controllability for large format NIR/SWIR detector arrays, a prototype ASIC is designed. It performs multiple detector array interfacing, power regulation and data acquisition operations inside the cryogenic chambers. Both operation commands and imaging data are communicated via the SpaceWire interface which will significantly reduce the number of wire goes in and out the cryogenic chamber. This "ASIC" prototype is realized in 0.18um CMOS technology and is designed for radiation hardness.

  15. Study of Radiation Hardness of Gd2SiO5 scintillator for Heavy Ion Beam

    CERN Document Server

    Kawade, K; Itow, Y; Masuda, K; Murakami, T; Sako,T; Suzuki, K; Suzuki, T; Taki, K

    2011-01-01

    Gd2SiO5 (GSO) scintillator has very excellent radiation resistance, a fast decay time and a large light yield. Because of these features, GSO scintillator is a suitable material for high radiation environment experiments such as those encountered at high energy accelerators. The radiation hardness of GSO has been measured with Carbon ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC). During two nights of irradiation the GSO received a total radiation dose of 7 × 10$^5$ Gy and no decrease of light yield was observed. On the other hand an increase of light yield by 25% was observed. The increase is proportional to the total dose, increasing at a rate of 0.025%/Gy and saturating at around 1 kGy. Recovery to the initial light yield was also observed during the day between two nights of radiation exposure. The recovery was observed to have a slow exponential time constant of approximately 1.5 × 10$^4$ seconds together with a faster component. In case of the LHCf experiment, a very forward region ex...

  16. Development of crystals based in cesium iodide for application as radiation detectors; Desenvolvimento de cristais baseados em iodeto de cesio para aplicacao como detectores de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Maria da Conceicao Costa

    2006-07-01

    Inorganic scintillators with fast luminescence decay time, high density and high light output have been the object of studies for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. Scintillation crystals based on cesium iodide (CsI) are matters with relatively low higroscopy, high atomic number, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, the growth of pure CsI crystals, CsI:Br and CsI:Pb, using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1,5x10{sup -1} M to 10{sup -2} M and the lead (Pb) in the range of 10{sup -2} M to 5x10{sup -4} M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers micro-hardness assays, determination of the doping elements distribution along the grown crystals and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV and alpha particles from a {sup 241}Am source, with energy of 5.54 MeV. It was obtained 13 ns to 19 ns for luminescence decay time for CsI:Br and CsI:Pb crystals. These results were very promising. The results obtained for micro-hardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma radiation and alpha particles. (author)

  17. The radiation hardness of silica optical fiber used in the LED-fiber monitor of BLM and BESIII EMC

    International Nuclear Information System (INIS)

    Xue Zhen; Hu Tao; Fang Jian; Xu Zizong; Wang Xiaolian; Lü Junguang; Zhou Li; Cai Xiao; Yu Boxiang; Wang Zhigang; Sun Lijun; Sun Xilei; Zhang Aiwu

    2012-01-01

    LED-fiber system has been used to monitor BLM and BESIII EMC. A radiation hard silica optical fiber is essential for its stability and reliability. Three types of silica optical fibers, silicone-clad silica optical fiber with high OH - content (SeCS), silica-clad silica optical fiber with low OH - content (SCSL) and silica-clad silica opical fiber with high OH - content (SCSH) were studied. In the experiment, 12 groups of fiber samples were irradiated by 60 Co and 3 groups of fiber samples were irradiated by BEPCII background radiation. Radiation hardness: the radiation hardness of SCSH is best and meets the radiation hardness requirement for LED-fiber monitor of BLM and BESIII EMC. The transmission of SeCS and SCSH decreased to around 80% under the 60 Co-irradiation of 5 Gy and 10 Gy, respectively. The radiation hardness of SeCS is worst because of its silicone cladding. Recovery characteristics: 60 Co-irradiated by the same doses, there were both more annealable and more permanent color centers formed in SeCS than SCSL, and for the same kind of fibers, as long as the irradiated doses are under a certain amount (for example, less than 5 Gy for SeCS), the higher the doses, both the more annealable and the more permanent color centers are formed.

  18. Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

    Science.gov (United States)

    McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

    2017-03-28

    Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

  19. Effects of device scaling and geometry on MOS radiation hardness assurance

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S.; Schwank, J.R.; Meisenheimer, T.L.

    1993-01-01

    In this work the authors investigate the effects of transistor scaling and geometry on radiation hardness. The total dose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during post-irradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structure-to-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative ΔV th ) will have a larger effect on standby power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive ΔV th ) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects they observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes

  20. Incomparable hardness and modulus of biomimetic porous polyurethane films prepared by directional melt crystallization of a solvent

    Science.gov (United States)

    An, Suyeong; Kim, Byoungsoo; Lee, Jonghwi

    2017-07-01

    Porous materials with surprisingly diverse structures have been utilized in nature for many functional purposes. However, the structures and applications of porous man-made polymer materials have been limited by the use of processing techniques involving foaming agents. Herein, we demonstrate for the first time the outstanding hardness and modulus properties of an elastomer that originate from the novel processing approach applied. Polyurethane films of 100-μm thickness with biomimetic ordered porous structures were prepared using directional melt crystallization of a solvent and exhibited hardness and modulus values that were 6.8 and 4.3 times higher than those of the random pore structure, respectively. These values surpass the theoretical prediction of the typical model for porous materials, which works reasonably well for random pores but not for directional pores. Both the ordered and random pore structures exhibited similar porosities and pore sizes, which decreased with increasing solution concentration. This unexpectedly significant improvement of the hardness and modulus could open up new application areas for porous polymeric materials using this relatively novel processing technique.

  1. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  2. Radiation effects and defects in lithium borate crystals

    Science.gov (United States)

    Ogorodnikov, Igor N.; Poryvay, Nikita E.; Pustovarov, Vladimir A.

    2010-11-01

    The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB3O5 (LBO), Li2B4O7 (LTB) and Li6Gd(BO3)3 (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li0 trapped-electron centers. At 290 K, the Li0 centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

  3. Radiation effects and defects in lithium borate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ogorodnikov, Igor N; Poryvay, Nikita E; Pustovarov, Vladimir A, E-mail: igor.ogorodnikov@bk.ru [Ural Federal University, Mira Street, 19, Ekaterinburg 620002 (Russian Federation)

    2010-11-15

    The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB{sub 3}O{sub 5} (LBO), Li{sub 2}B{sub 4}O{sub 7} (LTB) and Li{sub 6}Gd(BO{sub 3}){sub 3} (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li{sup 0} trapped-electron centers. At 290 K, the Li{sup 0} centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

  4. Development of the mercury iodide semiconductor crystal for application as a radiation detector

    International Nuclear Information System (INIS)

    Martins, Joao Francisco Trencher

    2011-01-01

    In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

  5. Large single-crystal diamond substrates for ionizing radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Girolami, Marco; Bellucci, Alessandro; Calvani, Paolo; Trucchi, Daniele M. [Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), Sede Secondaria di Montelibretti, Monterotondo Stazione, Roma (Italy)

    2016-10-15

    The need for large active volume detectors for ionizing radiations and particles, with both large area and thickness, is becoming more and more compelling in a wide range of applications, spanning from X-ray dosimetry to neutron spectroscopy. Recently, 8.0 x 8.0 mm{sup 2} wide and 1.2 mm thick single-crystal diamond plates have been put on the market, representing a first step to the fabrication of large area monolithic diamond detectors with optimized charge transport properties, obtainable up to now only with smaller samples. The more-than-double thickness, if compared to standard plates (typically 500 μm thick), demonstrated to be effective in improving the detector response to highly penetrating ionizing radiations, such as γ-rays. Here we report on the first measurements performed on large active volume single-crystal diamond plates, both in the dark and under irradiation with optical wavelengths (190-1100 nm), X-rays, and radioactive γ-emitting sources ({sup 57}Co and {sup 22}Na). (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Hard electronics; Hard electronics

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

  7. Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

    Energy Technology Data Exchange (ETDEWEB)

    Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F. [CNRS-IN2P3-IPN Orsay, Orsay (France)

    2007-07-01

    Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators ({approx}24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: {approx}20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T{approx}4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35{mu}A) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose ({approx}20%): a neutrons fluence of more than 10{sup 14} n/cm{sup 2} is achieved in {approx}20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T{approx}4.2 K. This new apparatus allows on-line automatic measurements

  8. Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

    International Nuclear Information System (INIS)

    Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F.

    2007-01-01

    Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators (∼24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: ∼20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T∼4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35μA) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose (∼20%): a neutrons fluence of more than 10 14 n/cm 2 is achieved in ∼20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T∼4.2 K. This new apparatus allows on-line automatic measurements of actuators characteristics and the

  9. Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology

    CERN Document Server

    Kuczynska, Marika; Bugiel, Szymon; Firlej, Miroslaw; Fiutowski, Tomasz; Idzik, Marek; Michelis, Stefano; Moron, Jakub; Przyborowski, Dominik; Swientek, Krzysztof

    2015-01-01

    A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, w...

  10. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, Lars Gimmestad

    2005-07-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  11. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

    CERN Document Server

    Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

  12. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    International Nuclear Information System (INIS)

    Johansen, Lars Gimmestad

    2005-06-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  13. Nanoporous hard data: optical encoding of information within nanoporous anodic alumina photonic crystals.

    Science.gov (United States)

    Santos, Abel; Law, Cheryl Suwen; Pereira, Taj; Losic, Dusan

    2016-04-21

    Herein, we present a method for storing binary data within the spectral signature of nanoporous anodic alumina photonic crystals. A rationally designed multi-sinusoidal anodisation approach makes it possible to engineer the photonic stop band of nanoporous anodic alumina with precision. As a result, the transmission spectrum of these photonic nanostructures can be engineered to feature well-resolved and selectively positioned characteristic peaks across the UV-visible spectrum. Using this property, we implement an 8-bit binary code and assess the versatility and capability of this system by a series of experiments aiming to encode different information within the nanoporous anodic alumina photonic crystals. The obtained results reveal that the proposed nanosized platform is robust, chemically stable, versatile and has a set of unique properties for data storage, opening new opportunities for developing advanced nanophotonic tools for a wide range of applications, including sensing, photonic tagging, self-reporting drug releasing systems and secure encoding of information.

  14. Life evaluation of FR-CV cable on thermal-radiation combined aging by micro-hardness

    International Nuclear Information System (INIS)

    Sugiyama, Masahiko; Ogata, Akimasa; Nitta, Makoto; Tani, Tsuneo; Yagi, Toshiaki; Seguchi, Tadao.

    1996-01-01

    For the evaluation of cable life for the application to nuclear facilities, the accelerated test was conducted by the combination of radiation and thermal oxidation. The degradation of FR-CV cable by the aging was monitored by tensile test, micro-hardness test, and gel-fraction measurement. The micro-hardness increased with the progress of degradation and related well with decrease of ultimate elongation of the sheath material, and was also reflected by the loss of plasticizer. The micro-hardness technique has a possibility to detect the degradation of cable as a non-destructive detector. (author)

  15. Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2015-07-01

    CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

  16. Effects of gamma radiation on hard dental tissues of albino rats: investigation by light microscopy.

    Science.gov (United States)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; El-Zainy, Medhat

    2013-08-01

    The present work aims at studying the effect of gamma radiation on the hard dental tissues. Eighty adult male albino rats with weights of about 250 g were used. The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy whole-body gamma doses. The effects on hard dental tissue samples were investigated after 48 h in histological and ground sections using light microscopy. Areas of acid phosphatase activity were detected using tartrate-resistant acid phosphatase (TRAP) stains. Observation of histological sections revealed disturbance in predentin thickness and odontoblastic layer as the irradiation dose increased. In cementum, widened cementocytes lacunae were occasionally detected even with low irradiated doses. On the other hand, relatively homogenous enamel was detected with darkened areas in enamel surface at doses over than 0.5 Gy. TRAP-positive cells were detected on the surface of the dentin of irradiated groups as well as cementum surface. Minimal detectable changes were observed in ground sections.

  17. Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

    International Nuclear Information System (INIS)

    Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

    2010-01-01

    The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

  18. Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

    CERN Multimedia

    Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Munoz sanchez, F J; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Marchiori, G; Maneuski, D; De capua, S; Williams, M R J; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Gonella, L; Wennloef, H L O; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Bomben, M; Oshea, V; Muenstermann, D; Holmkvist, C W; Oh, A; Lopez paz, I; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Chauveau, J; Villani, E G; Fox, H; Parkes, C J; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Gersabeck, M; Cobbledick, J L; Shepelev, A; Golubev, A; Apresyan, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Calderini, G; Svihra, P; Murray, D; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T

    2002-01-01

    The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

  19. Development of radiation hard CMOS active pixel sensors for HL-LHC

    International Nuclear Information System (INIS)

    Pernegger, Heinz

    2016-01-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  20. A radiation hard dipole magnet coils using aluminum clad copper conductors

    International Nuclear Information System (INIS)

    Leonhardt, W.J.

    1989-01-01

    A C-type septum dipole magnet is located 600 mm downstream of the primary target in an external beam line of the AGS. Conventional use of fiber glass/epoxy electrical insulation for the magnet coils results in their failure after a relatively short running period, therefore a radiation hard insulation system is required. This is accomplished by replacing the existing copper conductor with a copper conductor having a thin aluminum skin which is anodized to provide the electrical insulation. Since the copper supports a current density of 59 A/mm 2 , no reduction in cross sectional area can be tolerated. Design considerations, manufacturing techniques, and operating experience of a prototype dipole is presented. 3 refs., 4 figs

  1. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

    2014-11-21

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

  2. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

    2014-01-01

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

  3. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    Energy Technology Data Exchange (ETDEWEB)

    Loechner, S.

    2006-07-26

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  4. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    International Nuclear Information System (INIS)

    Loechner, S.

    2006-01-01

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  5. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    International Nuclear Information System (INIS)

    Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

    2017-01-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  6. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    Energy Technology Data Exchange (ETDEWEB)

    Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  7. Moessbauer radiation dynamical diffraction in crystals being subjected to the action of external variable fields

    International Nuclear Information System (INIS)

    Baryshevskii, V.G.; Skadorov, V.V.

    1986-01-01

    A dynamical theory is developed of the Moessbauer radiation diffraction by crystals being subjected to an variable external field action. Equations describing the dynamical diffraction by nonstationary crystals are obtained. It is shown that the resonant interaction between Moessbauer radiation and shift field induced in the crystal by a variable external field giving rise to an effective conversion of the incident wave into a wave with changed frequency. (author)

  8. Dynamic chaos phenomenon and coherent radiation accompanying high energy particle motion through crystals

    International Nuclear Information System (INIS)

    Akhiezer, A.I.; Truten', V.I.; Shul'ga, N.F.

    1991-01-01

    A crystal has a regular structure, therefore every motion in such a structure seems to be regular. However, it is not actually so and even in perfect crystals the particle motion may be either regular or chaotic. Everything depends on the number of integrals of motion determining a particle trajectory. The character of particle motion in a crystal, i.e. its regularity or chaoticity, affects many physical processes accompanying the particle's motion. In this paper we shall consider the effect of dynamic chaos on the coherent radiation of fast particles in a crystal. We also consider the validity conditions of coherent radiation theory results, the role of the second and higher Born approximations in the radiation theory of fast particles in crystals, the continuous string approximation in this theory, the coherent radiation in the model of random strings, and the multiple scattering effect on the coherent radiation. (author)

  9. Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

    Science.gov (United States)

    McMorrow, Julian

    memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates

  10. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  11. Time-resolved hard x-ray studies using third-generation synchrotron radiation sources (abstract)

    International Nuclear Information System (INIS)

    Mills, D.M.

    1992-01-01

    The third-generation, high-brilliance, synchrotron radiation sources currently under construction will usher in a new era of x-ray research in the physical, chemical, and biological sciences. One of the most exciting areas of experimentation will be the extension of static x-ray scattering and diffraction techniques to the study of transient or time-evolving systems. The high repetition rate, short-pulse duration, high-brilliance, variable spectral bandwidth, and large particle beam energies of these sources make them ideal for hard x-ray, time-resolved studies. The primary focus of this presentation will be on the novel instrumentation required for time-resolved studies such as optics which can increase the flux on the sample or disperse the x-ray beam, detectors and electronics for parallel data collection, and methods for altering the natural time structure of the radiation. This work is supported by the U.S. Department of Energy, BES-Materials Science, under Contract No. W-31-109-ENG-38

  12. Decision feedback equalization for radiation hard data link at 5 Gbps

    International Nuclear Information System (INIS)

    Wallängen, V.; Garcia-Sciveres, M.

    2017-01-01

    The increased particle collision rate following the upgrade of the Large Hadron Collider (LHC) to an increased luminosity requires an increased readout data speed, especially for the ATLAS pixel detector, located closest to the particle interaction point. For this reason, during the Phase-II upgrade of the ATLAS experiment the output data speed of the pixel front-end chips will be increased from 160 Mbps to 5 Gbps. The increased radiation levels will require a radiation hard data transmission link to be designed to carry this data from the pixel front-end to the off-detector system where it will undergo optical conversion. We propose a receiver utilizing the concept of Decision Feedback Equalization (DFE) to be used in this link, where the number of filter taps can be determined from simulations using S-parameter data from measurements of various customized cable prototypes under characterization as candidates to function as transmission medium between the on-chip data driver and the receiver of the link. A dedicated framework has been set up in Matlab to analyze the S-parameter characteristics for the various cable prototypes and investigate the possibilities for signal recovery and maintained signal integrity using DFE, as well as pre-emphasis and different encoding schemes. The simulation results indicate that DFE could be an excellent choice for expanding the system bandwidth to reach required data speeds with minimal signal distortion.

  13. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

    Science.gov (United States)

    Pernegger, H.; Bates, R.; Buttar, C.; Dalla, M.; van Hoorne, J. W.; Kugathasan, T.; Maneuski, D.; Musa, L.; Riedler, P.; Riegel, C.; Sbarra, C.; Schaefer, D.; Schioppa, E. J.; Snoeys, W.

    2017-06-01

    The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

  14. Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

    CERN Document Server

    Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

    2005-01-01

    Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

  15. Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

    Science.gov (United States)

    Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

    2017-07-01

    Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

  16. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  17. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  18. Studies of synthetic single crystal diamonds as reliable dosimeters for electromagnetic ionizing radiation fields

    International Nuclear Information System (INIS)

    Pillon, Mario; Angelone, Maurizio; Almaviva, Salvatore; Marinelli, Marco; Milani, Enrico; Prestopino, Giuseppe; Tucciarone, Aldo; Verona, Claudio; Verona-Rinati, Gianluca; Baccaro, Stefania

    2008-01-01

    Full text: Spatial high resolution dosimetry is very important in all areas of radiation therapy and, in particular, whenever narrow photon beams are required for Stereotactic Radiotherapy (SRT) and small field segments are used for Intensity Modulated Radiotherapy (IMRT). The available detectors are often too large with respect to the beam size considered, which is characterized by high dose gradients and lack of charged particle equilibrium. An ideal solution is represented by single crystal diamond detectors, which are small solid state devices, radiation hard, tissue equivalent and capable of real time response. In the present work, synthetic CVD single crystal diamond dosimeters (SCD), fabricated at Rome 'Tor Vergata' University Laboratories, have been characterized. The devices consist of a p-type/intrinsic/metal layered structure. They have been analyzed in terms of reproducibility, linearity, depth dose distributions, energy, dose rate and field size dependence by using 6 and 10 MV Bremsstrahlung x-ray beams, produced by a CLINAC DHX Varian accelerator and the gamma irradiation facility CALLIOPE. The gamma Calliope plant is a pool-type irradiation facility equipped with the 60 Co γ-source in a high-volume (7 x 6 x 3.9m 3 ). Maximum dose rate is 9400 Gy/h. The measurements have been compared with a calibrated ionization chamber and a Fricke dosimeter. The SCD's response is shown to be linearly correlated with the ionization chamber output over the whole dose range explored. Reproducibility, energy and dose rate dependency lower than 1% were observed. A depth dose distribution and irradiation field dependence in agreement with those obtained by reference dosimeters within 2% of accuracy were demonstrated as well. The results of this study are very encouraging about the suitability of SCD for clinical dosimetry with photon beams. (author)

  19. On the nature of absorption in the range of CO2-laser radiation and laser-induced destruction of KCl crystals at the first stage of radiation colouring

    International Nuclear Information System (INIS)

    Gektin, A.V.; Charkina, T.A.; Shiran, N.V.

    1985-01-01

    A mechanism explaining both an increase of crystal absorption in CO 2 -laser radiation range and a decrease of the thershold of KCl crystals optical destruction is proposed. The mechanism is based on the presence of a bond between hydroxyl ion content and a change of crystal transparency in the IR range under γ-radiation at the first stage of radiation colouring

  20. Radiation-hard ASICS for sLHC optical data transmission

    International Nuclear Information System (INIS)

    Gan, K.K.

    2009-01-01

    High-speed data transmission in a high radiation environment poses an immense challenge in the detector design. We investigate the feasibility of using optical links for the silicon trackers of the ATLAS experiment for the planned upgrade of the LHC. The planned upgrade with ten times higher collision rate will produce a similar increase in the radiation. One possibility for the optical transmission is to use VCSEL arrays operating at 850 nm to transmit optical signals while using PIN arrays to convert the optical signals into electrical signals. We have designed a prototype chip containing building blocks for future SLHC optical links using a 130 nm CMOS 8RF process. The chip contains four main blocks; a VCSEL driver optimized for operation at 640 Mb/s, a VCSEL driver optimized for 3.2 Gb/s, a PIN receiver with a clock/data recovery circuit for operation at 40, 160, and 320 Mb/s, and two clock multipliers designed to operate at 640 Mb/s. The clock multiplier is designed to produce the high speed clock to serialize the data for transmission. All circuitry was designed following test results and guidelines from CERN on radiation tolerant design for the process. We have irradiated the chips with 24 GeV protons at CERN. For the VDC, the duty cycle of the output signal and the current consumption of the LVDS receiver remained constant during the irradiation. However, we observed significant decreases in the current consumption of the VCSEL driver circuit and the output drive current. This indicated that the think oxide layout used in the VCSEL driver portion of the chip might not be as radiation-hard and the circuit had been redesigned to minimize this sensitivity. For the PIN receiver, we found that the radiation produced no significant degradation, including the single event upset rate. The upset rate decreased with larger PIN current and was higher for a chip coupled to a PIN diode as expected. For the clock multipliers, we observed that the clocks of some chips

  1. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    Energy Technology Data Exchange (ETDEWEB)

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  2. Observation of Ortho-III correlations by neutron and hard x-ray scattering in an untwinned YBa2Cu3O6.77 single crystal

    DEFF Research Database (Denmark)

    Schleger, P.; Casalta, H.; Hadfield, R.

    1995-01-01

    We present measurements of Ortho-III phase correlations in an untwinned single crystal of YBa2Cu3O6.77 by neutron scattering and the novel method of hard (95 keV) X-ray scattering. The Ortho-III ordering is essentially two-dimensional, exhibiting Lorentzian peak shapes in the a-b plane. At room...

  3. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal

    Directory of Open Access Journals (Sweden)

    Robinson Alves dos Santos

    2017-01-01

    Full Text Available Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method. The purification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS, after each purification process. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals. The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity.

  4. Crystallization of sheared hard spheres at 64.5% volume fraction

    Science.gov (United States)

    Swinney, H. L.; Rietz, F.; Schroeter, M.; Radin, C.

    2017-11-01

    A classic experiment by G.D. Scott Nature 188, 908, 1960) showed that pouring balls into a rigid container filled the volume to an upper limit of 64% of the container volume, which is well below the 74% volume fraction filled by spheres in a hexagonal close packed (HCP) or face center cubic (FCC) lattice. Subsequent experiments have confirmed a ``random closed packed'' (RCP) fraction of about 64%. However, the physics of the RCP limit has remained a mystery. Our experiment on a cubical box filled with 49400 weakly sheared glass spheres reveals a first order phase transition from a disordered to an ordered state at a volume fraction of 64.5%. The ordered state consists of crystallites of mixed FCC and HCP symmetry that coexist with the amorphous bulk. The transition is initiated by homogeneous nucleation: in the shearing process small crystallites with about ten or fewer spheres dissolve, while larger crystallites grow. A movie illustrates the crystallization process. German Academic Exchange Service (DAAD), German Research Foundation (DFG), NSF DMS, and R.A. Welch Foundation.

  5. Radiation of fast positrons interacting with periodic microstructure on the surface of a crystal

    Energy Technology Data Exchange (ETDEWEB)

    Epp, V., E-mail: epp@tspu.edu.ru [Tomsk State Pedagogical University, ul. Kievskaya 60, 634061 Tomsk (Russian Federation); Tomsk State University, pr. Lenina 36, 634050 Tomsk (Russian Federation); Janz, J.G., E-mail: Yanc@tpu.ru [Tomsk Polytechnic University, pr. Lenina 34, 634050 Tomsk (Russian Federation); Kaplin, V.V., E-mail: kaplin@tpu.ru [Tomsk Polytechnic University, pr. Lenina 34, 634050 Tomsk (Russian Federation)

    2016-12-01

    Highlights: • New tunable crystalline source of X-ray radiation is described. • Radiation is emitted by the channeling relativistic particles. • A set of crystal plates offers more effective monitoring of the photon energy. • Formulae describing the radiation properties are obtained. - Abstract: Radiation of positrons passing through a set of equidistant crystal plates is calculated. Each plate is of thickness of half of the particle trajectory period at planar channeling in a thick crystal. Positively charged particle entering the first plate at an angle smaller than the critical channeling angle is captured into channeling mode and changes the direction of its transversal velocity to reversed. Between the half-wave plates the particle moves along a straight line. The proposed setup can be realized as a set of equidistant ridges on the surface of a single crystal. Passing through such set of half-wave crystal plates the particle moves on quasi-undulator trajectories. Properties of the particle radiation emitted during their passage through such “multicrystal undulator” are calculated. The radiation spectrum in each particular direction is discrete, and the frequency of the first harmonic and the number of harmonics in the spectrum depend on the distance between the plates, on energy of the particles and on the averaged potential energy of atomic planes of the crystal. The radiation is bound to a narrow cone in the direction of the average particle velocity and polarized essentially in a plane orthogonal to the atomic planes in the crystal.

  6. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    International Nuclear Information System (INIS)

    Rummel, Stefan

    2009-01-01

    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e - at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e - using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed with

  7. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    Energy Technology Data Exchange (ETDEWEB)

    Rummel, Stefan

    2009-07-20

    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e{sup -} at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e{sup -} using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed

  8. The features of radiation damages in L-alanine crystals

    International Nuclear Information System (INIS)

    Zaitov, V.R.; Onischuk, V.A.

    1996-01-01

    The method of the ESR alanine dosimetry has appeared the most convenient one for measurement of radiation dose in the range 1-10 6 Gy. Its peculiarities are the wide dose range, the high accuracy, the absence fading at room temperature, the possibility of many times repeated measurements as dosemeter accumulates dose, the simplicity of measurements. Because of this performance ESR alanine dosimetry technique can be applied to continuous monitoring radiation doses absorbed by materials on nuclear power stations as well as of dose fields and restoration doses after an accident situation. In order to determine accurately the absorbed dose in an accident on background of accumulated dose for previous period, it is necessary to the utmost increase the accuracy of dosimetry system. For this reason it is necessary to know how the properties of free radicals which formings in irradiated L-alanine are displayed in signal ESR. With the purpose to detect the structure of the free radicals the ESR spectra the L-alanine and L-alanine-d 3 single crystals were studied. The samples were grown by slow evaporation of the saturated aqueous solution. For obtain the L-alanine-d 3 the three-divisible recrystallization in heavy water had been used. The samples were irradiated with 60 Co at room temperature and in liquid nitrogen. The irradiation doses were 10 kGy and dose rate was 8,3 Gy/s. To increase the resolution of the ESR spectra hyperfine structure the second derivative for the absorption curve was registered. The measurements were conducted in X-range at temperatures 77-430 K. (author)

  9. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

    International Nuclear Information System (INIS)

    Pernegger, H.; Hoorne, J.W. van; Kugathasan, T.; Musa, L.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E.J.; Snoeys, W.; Bates, R.; Buttar, C.; Maneuski, D.; Dalla, M.; Sbarra, C.

    2017-01-01

    The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 10"1"5 n _e_q/cm"2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

  10. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.R.; Smith, D.S.; Wiese, A.; Ziolkowskic, M.

    2011-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for a VCSEL and a receiver/decoder to decode the signal received at a PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder properly decodes the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ∼5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value.

  11. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    International Nuclear Information System (INIS)

    Gan, K K; Kagan, H P; Kass, R D; Moore, J R; Smith, D S; Buchholz, P; Wiese, A; Ziolkowskic, M

    2010-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ∼ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad with 24 GeV/c protons. The observed modest degradation is acceptable and the single event upset rate is negligible.

  12. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    CERN Document Server

    Gan, K K; Kagan, H P; Kass, R D; Moore, J R; Smith, D S; Wiese, A; Ziolkowskic, M; 10.1088/1748-0221/5/12/C12006

    2010-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ~ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad ...

  13. A study on image quality and exposure dose of hard radiation radiography of the chest

    International Nuclear Information System (INIS)

    Hayashi, Taro; Ishida, Yuji; Maeda, Mika; Sakurai, Tatsuya; Kim, Chung Woon; Hwang, Jong Sun

    1991-01-01

    Experiment was conducted on the image quality and exposure dose following replacement of CaWO 4 system screen BH - III and BX - III which have so far been used for high - voltage hard - radiation quality radiography, with rare earth system screen KO750, combined with high contrast film SRH, while additional filter was altered, Cu 0.8 mm + Al 1.4 mm(HVL : AI 8.8 mm), Cu 1.3 mm + AI 1.0mm(HVL: AI 10.6mm) and Cu 1.8mm + AI 1.5mm(HVL: AI 11.4mm). AS a result, visual evaluation did not detect extreme changes in image quality under the respective condition (HVL : Al 8.8 mm ∼ AI 11.4 mm). It was noted, however, that surface exposure dose declined with an increase in the thickness of the additional filter, as it was 18.9 μGy at HVL Al 8.8 mm, 17.5 μGy at Al 10.6 mm and 15.7 μGy at Al 11.4 mm. Considering the limited rating of X-ray equipment and wear of machinery, however, the range of Cu 1.3 mm ∼ l.8 mm + AI 1.0 mm ∼ 1.5 mm(1/16 VL ∼ 1/32 VL) seemed to be a limit

  14. Development and characterisation of a radiation hard readout chip for the LHCb experiment

    CERN Document Server

    Baumeister, Daniel; Stachel, Johanna

    2003-01-01

    Within this doctoral thesis parts of the radiation hard readout chip Beetle have been developed and characterised, before and after irradiation. The design work included the analogue memory with the corresponding readout amplifier as well as components of the digital control circuitry. An interface compatible with the I2C-standard and the control logic for event readout have been implemented. A scheme has been developed which ensures the robustness of the Beetle chip against Single-Event Upset (SEU). This includes the consistent use of triple-redundant memory devices together with a self-triggered correction in parts of the circuit. The Beetle ASIC is a 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier and a CR-RC pulse shaper. It features an equivalent noise charge of ENC = 497 e− +48.3 e−/pF·Cin. The analogue memory is a switched capacitor array, which provides a latency of max. 4 µs. The 128 channels are transmitted off chip in 9...

  15. Raphide crystal structure in agave tequilana determined by x-ray originating from synchrotron radiation

    International Nuclear Information System (INIS)

    Tadokoro, Makoto; Ozawa, Yoshiki; Mitsumi, Minoru; Toriumi, Kohshiro; Ogura, Tetsuya

    2005-01-01

    The first single crystal structure of small natural raphides in an agave plant is completely determined using an intense X-ray originating from a synchrotron radiation. The SEM image shows that the tip of the crystal is approximately hundreds of nanometer in width sharply grow to stick to the tissue of herbivorous vermin. Furthermore, the crystal develops cracks that propagate at an inclination of approximately 45deg towards the direction of crystal growth such that the crystal easily splits into small pieces in the tissue. (author)

  16. Conversion of broadband thermal radiation in lithium niobate crystals of various compositions

    Science.gov (United States)

    Syuy, A. V.; Litvinova, M. N.; Goncharova, P. S.; Sidorov, N. V.; Palatnikov, M. N.; Krishtop, V. V.; Likhtin, V. V.

    2013-05-01

    The conversion of the broadband thermal radiation in stoichiometric ( R = 1) lithium niobate single crystals that are grown from melt with 58.6 mol % of LiO2, congruent ( R = Li/Nb = 0.946) melt with the K2O flux admixture (4.5 and 6.0 wt %), and congruent melt and in congruent single crystals doped with the Zn2+, Gd3+, and Er3+ cations is studied. It is demonstrated that the conversion efficiency of the stoichiometric crystal that is grown from the melt with 58.6 mol % of LiO2 is less than the conversion efficiency of congruent crystal. In addition, the stoichiometric and almost stoichiometric crystals and the doped congruent crystals exhibit the blue shift of the peak conversion intensity in comparison with a nominally pure congruent crystal. For the congruent crystals, the conversion intensities peak at 520 and 495 nm, respectively.

  17. Characterisation and application of radiation hard sensors for LHC and ILC

    International Nuclear Information System (INIS)

    Novgorodova, Olga

    2013-11-01

    The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

  18. Characterisation and application of radiation hard sensors for LHC and ILC

    Energy Technology Data Exchange (ETDEWEB)

    Novgorodova, Olga

    2013-11-15

    The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

  19. Crystallization in metglass: growth mechanism of crystals and radiation effects in Fe Ni P B

    International Nuclear Information System (INIS)

    Limoge, Y.; Barbu, A.

    1981-08-01

    Studying crystallization mechanisms and transport properties in amorphous metallic alloys we propose a model for systems wich are displaying eutectoid decomposition. Bringing together self diffusion, electron microscopy and electron irradiation experiments on a Fe Ni P B alloys we have shown that crystallization controlled by interfacial diffusion at the crystal surface can explain all the observed features of the experimental behaviour

  20. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    International Nuclear Information System (INIS)

    Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

    2014-01-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

  1. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2014-08-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

  2. Fabrication of radiation detector using PbI{sub 2} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, T; Sakamoto, K; Ohba, K; Suehiro, T; Hiratate, Y [Tohoku Inst. of Tech., Sendai (Japan)

    1996-07-01

    In this paper, we will discuss the PbI{sub 2} radiation detector fabricated from a crystal grown by the zone melting method and by the vapor phase method, together with characteristics of the crystal obtained by a XPS analyzer. (J.P.N.)

  3. Simulating of spectrum and polarization characteristics of ultrarelativistic - electron coherent radiation in a diamond crystal

    International Nuclear Information System (INIS)

    Truten', V.I.

    2000-01-01

    On the base of the computer simulation method it is shown that new maxima of ultrarelativistic electron radiation spectrum in aligned crystals may appear in a low-frequency region together with the ordinary coherent maxima. The appearance of these maxima is the result of the high-index-crystal-plane effect. These maxima manifest themselves in spectral as well as in polarization features of radiation [ru

  4. Towards radiation hard converter material for SiC-based fast neutron detectors

    Science.gov (United States)

    Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

    2018-05-01

    In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection

  5. Computer simulations of radiation damage in protein crystals; Simulationsrechnungen zu Strahlenschaeden an Proteinkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Zehnder, M

    2007-03-15

    The achievable resolution and the quality of the dataset of an intensity data collection for structure analysis of protein crystals with X-rays is limited among other factors by radiation damage. The aim of this work is to obtain a better quantitative understanding of the radiation damage process in proteins. Since radiation damage is unavoidable it was intended to look for the optimum ratio between elastically scattered intensity and radiation damage. Using a Monte Carlo algorithm physical processes after an inelastic photon interaction are studied. The main radiation damage consists of ionizations of the atoms through the electron cascade following any inelastic photon interaction. Results of the method introduced in this investigation and results of an earlier theoretical studies of the influence of Auger-electron transport in diamond are in a good agreement. The dependence of the radiation damage as a function of the energy of the incident photon was studied by computer-aided simulations. The optimum energy range for diffraction experiments on the protein myoglobin is 10-40 keV. Studies of radiation damage as a function of crystal volume and shape revealed that very small plate or rod shaped crystals suffer less damage than crystals formed like a cube with the same volume. Furthermore the influence of a few heavy atoms in the protein molecule on radiation damage was examined. Already two iron atoms in the unit cell of myoglobin increase radiation damage significantly. (orig.)

  6. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

    2015-01-01

    Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

  7. Radiation defects in oxide crystals doped with rare earth ions

    NARCIS (Netherlands)

    Matkovskii, A; Durygin, A; Suchocki, A; Sugak, D; Wallrafen, F; Vakiv, M

    1999-01-01

    The nature of stable and transient color centers in Y3Al5O12, Gd3Ca5O12, YAlO3 and LiNbO3 crystals is studied. The color centers are created by various types of irradiation. The effect of irradiation on crystal optical properties in visible and ultraviolet range is presented.

  8. Effects of ionizing radiation on struvite crystallization of livestock wastewater

    International Nuclear Information System (INIS)

    Kim, Tak- Hyun; Nam, Yun-Ku; Joo Lim, Seung

    2014-01-01

    Livestock wastewater is generally very difficult to be treated by conventional wastewater treatment techniques because it contains high-strength organics (COD), ammonium (NH 4 + ), phosphate (PO 4 3− ) and suspended solids. Struvite crystallization has been recently studied for the simultaneous removal of NH 4 + and PO 4 3− . In this study, gamma ray irradiation was carried out prior to struvite crystallization of the anaerobically digested livestock wastewater. The effects of gamma ray irradiation on the struvite crystallization of livestock wastewater were investigated. As a result, gamma ray irradiation can decrease the concentration of COD, NH 4 + and PO 4 3− contained in the livestock wastewater. This results in not only an enhancement of the struvite crystallization efficiency but also a decrease in the chemical demands for the struvite crystallization of livestock wastewater. - Highlights: • Gamma ray was applied prior to struvite crystallization of livestock wastewater. • Gamma ray resulted in an enhancement of struvite crystallization efficiency. • This is due to the decrease of COD concentration by gamma ray irradiation

  9. Final Technical Report Radiation Hard Tight Pitch GaInP SPAD Arrays for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Harmon, Eric

    2018-01-26

    The specialized photodetectors used in high energy physics experiments often need to remain extremely sensitive for years despite radiation induced damage caused by the constant bombardment of high energy particles. To solve this problem, LightSpin Technologies, Inc. in collaboration with Prof. Bradley Cox and the University of Virginia is developing radiation-hard GaInP photodetectors which are projected to be extraordinarily radiation hard, theoretically capable of withstanding a 100,000-fold higher radiation dose than silicon. In this Phase I SBIR project, LightSpin investigated the performance and radiation hardness of fifth generation GaInP SPAD arrays. These fifth generation devices used a new planar processing approach that enables very tight pitch arrays to be produced. High performance devices with SPAD pitches of 11, 15, and 25 μm were successfully demonstrated, which greatly increased the dynamic range and maximum count rate of the devices. High maximum count rates are critical when considering radiation hardness, since radiation damage causes a proportional increase in the dark count rate, causing SPAD arrays with low maximum count rates (large SPAD pitches) to fail. These GaInP SPAD array Photomultiplier Chips™ were irradiated with protons, electrons, and neutrons. Initial irradiation results were disappointing, with the post-irradiation devices exhibiting excessively high dark currents. The degradation was traced to surface leakage currents that were largely eliminated through the use of trenches etched around the exterior of the Photomultiplier Chip™ (not between SPAD elements). A second round of irradiations on Photomultiplier Chips™ with trenches proved substantially more successful, with post-irradiation dark currents remaining relatively low, though dark count rates were observed to increase at the highest doses. Preliminary analysis of the post-irradiation devices is promising … many of the irradiated Photomultiplier Chips™ still

  10. Crystal glass used for X ray and gamma radiation shielding - Part two

    International Nuclear Information System (INIS)

    Antonio Filho, Joao

    2007-01-01

    Crystal glass has been widely used as shielding material in gamma radiation sources as well as x-ray generating equipment to replace the plumbiferous glass, in order to minimize exposure to individuals. However, properties of the radiation attenuation of crystal glass commercially available in Brazil, for the different types of energy are not known. For this reason, this work was carried out aiming to determine the radiation attenuation, transmission curves and Half Value Layer. In this work, ten plates of crystal glass, with dimensions of 20 cm x 20 cm and range of thicknesses from 0.5 to 2.0 cm, were used. The plates were X-ray irradiated with potential constants of 60, 80, 110, 150 kV and gamma radiation of 60 Co. Analysis in the properties of the 60 Co radiation attenuation of barite plaster and barite concrete commercially available in Brazil were also carried out. The curves of attenuation and of transmission were obtained for crystal glass, barite plaster and barite concrete (mGy/mA.min) at 1 meter as a function of thickness. The thickness equivalent of a half value layer and deci value layer of crystal glass for all types of radiation and energies studied was also determined. (author)

  11. Superluminescence of cadmium sulfide crystals under pulse X-ray radiation

    International Nuclear Information System (INIS)

    Pavlovskaya, N.G.; Tarasov, M.D.; Balakin, V.A.; Varava, V.P.; Lobov, S.I.; Surskij, O.K.; Tsukerman, V.A.

    1977-01-01

    Studies were made to elucidate luminescence properties of CdS crystal radiated by short pulses of braking x-ray radiation. Such a radiation causes the appearance of superluminescence. The radiation was carried out at 295 and 170 K, the radiation dose being changed from 3600 to 1600 r/pulse. At the temperature of 295 K light luminescence was registered at the wave length of 528 nm and half-width of 15 nm. While the temperature lowers, the radiation shifts to the range of shorter wave lengths, and a decrease of the spectrum half-width is observed. With the increase of radiation dose the decrease of radiation spectrum half-width is observed. Approximate calculations show that to achieve the spectrum narrowing to 1 nm at room temperature it is necessary to increase radiation dose per pulse 5-6 times

  12. Radiation defects in SrB4O7:Eu2+ crystals

    International Nuclear Information System (INIS)

    Yavetskiy, R.P.; Dolzhenkova, E.F.; Tolmachev, A.V.; Parkhomenko, S.V.; Baumer, V.N.; Prosvirnin, A.L.

    2007-01-01

    Radiation-induced defects in SrB 4 O 7 :Eu 2+ (0.033 at.%) single crystal irradiated with γ and X-ray quanta has been studied. The induced optical absorption in the 400-700 nm region has been ascribed to F + centers. The Eu 2+ ions have been shown to act simultaneously as traps and as radiative recombination centers of charge carriers. Basing on the thermally stimulated luminescence (TSL), optical absorption and photoluminescence studies of SrB 4 O 7 :Eu 2+ crystals, a TSL mechanism has been proposed associated with the decay of F + centers being in non-equivalent crystallographic positions followed by radiative recombination of charge carriers on europium ions. Various positions of localization of the radiation-induced defects in the SrB 4 O 7 crystal structure have been discussed

  13. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Estribeau, M.; Cervantes, P.; Molina, R.; Magnan, P.; Gaillardin, M.

    2014-01-01

    The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed. (authors)

  14. Preliminary study of a phase transformation in insulin crystals using synchrotron-radiation Laue diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Reynolds, C D; Stowell, B; Joshi, K K; Harding, M M; Maginn, S J; Dodson, G G

    1988-10-01

    Synchrotron-radiation Laue diffraction photographs have been recorded showing the transformation of single 4Zn insulin crystals (a=80.7 (1), c=37.6 (1) A, space group R3) to 2Zn insulin (a=82.5 (1), c=34.0 (1) A, space group R3). The transformation was brought about by changing the mother liquor in the capillary in which the crystal was mounted. Photographs were taken at 10 min intervals (exposure time 3 s) from 0.5 h after mounting. They showed initially a well ordered 4Zn insulin crystal (d/sub min/ ca 2.3 A), then a poorly ordered, sometimes multiple, crystal, and finally a 2Zn insulin crystal, about as well ordered as the initial crystal.

  15. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  16. Characteristics of withstanding radiation damage of InP crystals and devices

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Ando, Koshi

    1988-01-01

    Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

  17. Miniaturized radiation detector with custom synthesized diamond crystal as sensor

    International Nuclear Information System (INIS)

    Grobbelaar, J.H.; Burns, R.C.; Nam, T.L.; Keddy, R.J.

    1991-01-01

    A miniaturized detector consisting of three custom built hybrid circuits, a counter and a miniature high voltage power supply was designed to operate with custom synthesized Type Ib diamond crystals as sensors. Thick-film technology was incorporated in the circuit design. With a crystal having a volume of approximately 10 mm 3 and containing approximately 60 ppm paramagnetic nitrogen, the detector was capable of measuring γ-ray dose-rates as low as 7.5 μ Gy h -1 . The response characteristic was linear up to 1 cGy h -1 . (orig.)

  18. Crystallization of AlON layers and its effects on the microstructure and hardness of reactively synthesized ZrN/AlON nanomultilayers

    Energy Technology Data Exchange (ETDEWEB)

    Dong Yunshan; Yue Jianling; Liu Yan; Li Geyang [State Key Lab of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200030 (China)

    2006-11-21

    By reactively sputtering Zr and Al{sub 2}O{sub 3} targets in a gaseous mixture of Ar and N{sub 2}, ZrN/AlON nanomultilayers were synthesized to study the crystallization conditions for AlON layers and how they influence the characteristics of multilayers. The composition analysis indicated that some of the oxygen atoms were replaced by nitrogen atoms in Al{sub 2}O{sub 3}, leading to the formation of aluminium oxynitride, AlON, during the procedure of the Al{sub 2}O{sub 3} target being sputtered in the gaseous mixture. Further investigations showed that when their thickness was limited to less than 1 nm, amorphous AlON layers were crystallized under the template effects of crystalline ZrN layers, and then coherent interfaces formed as a result. Correspondingly, the multilayers were remarkably strengthened with hardness approaching a maximum of 33 GPa. After the layer thickness of AlON exceeded the critical value of 1 nm, the subsequently deposited AlON grew amorphously and blocked the epitaxial growth of multilayers, accompanied by the decline of hardness. Yet, on the other hand, the integrated hardness of multilayers was not sensitive to the thickness of the ZrN template layers and its value was maintained a bit higher than 30 GPa in a wide range of ZrN layer thickness variations.

  19. Nonvolatile Rad-Hard Holographic Memory

    Science.gov (United States)

    Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

    2001-01-01

    We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

  20. Can radiation damage to protein crystals be reduced using small-molecule compounds?

    Energy Technology Data Exchange (ETDEWEB)

    Kmetko, Jan [Kenyon College, Gambier, OH 43022 (United States); Warkentin, Matthew; Englich, Ulrich; Thorne, Robert E., E-mail: ret6@cornell.edu [Cornell University, Ithaca, NY 14853 (United States); Kenyon College, Gambier, OH 43022 (United States)

    2011-10-01

    Free-radical scavengers that are known to be effective protectors of proteins in solution are found to increase global radiation damage to protein crystals. Protective mechanisms may become deleterious in the protein-dense environment of a crystal. Recent studies have defined a data-collection protocol and a metric that provide a robust measure of global radiation damage to protein crystals. Using this protocol and metric, 19 small-molecule compounds (introduced either by cocrystallization or soaking) were evaluated for their ability to protect lysozyme crystals from radiation damage. The compounds were selected based upon their ability to interact with radiolytic products (e.g. hydrated electrons, hydrogen, hydroxyl and perhydroxyl radicals) and/or their efficacy in protecting biological molecules from radiation damage in dilute aqueous solutions. At room temperature, 12 compounds had no effect and six had a sensitizing effect on global damage. Only one compound, sodium nitrate, appeared to extend crystal lifetimes, but not in all proteins and only by a factor of two or less. No compound provided protection at T = 100 K. Scavengers are ineffective in protecting protein crystals from global damage because a large fraction of primary X-ray-induced excitations are generated in and/or directly attack the protein and because the ratio of scavenger molecules to protein molecules is too small to provide appreciable competitive protection. The same reactivity that makes some scavengers effective radioprotectors in protein solutions may explain their sensitizing effect in the protein-dense environment of a crystal. A more productive focus for future efforts may be to identify and eliminate sensitizing compounds from crystallization solutions.

  1. Can radiation damage to protein crystals be reduced using small-molecule compounds?

    International Nuclear Information System (INIS)

    Kmetko, Jan; Warkentin, Matthew; Englich, Ulrich; Thorne, Robert E.

    2011-01-01

    Free-radical scavengers that are known to be effective protectors of proteins in solution are found to increase global radiation damage to protein crystals. Protective mechanisms may become deleterious in the protein-dense environment of a crystal. Recent studies have defined a data-collection protocol and a metric that provide a robust measure of global radiation damage to protein crystals. Using this protocol and metric, 19 small-molecule compounds (introduced either by cocrystallization or soaking) were evaluated for their ability to protect lysozyme crystals from radiation damage. The compounds were selected based upon their ability to interact with radiolytic products (e.g. hydrated electrons, hydrogen, hydroxyl and perhydroxyl radicals) and/or their efficacy in protecting biological molecules from radiation damage in dilute aqueous solutions. At room temperature, 12 compounds had no effect and six had a sensitizing effect on global damage. Only one compound, sodium nitrate, appeared to extend crystal lifetimes, but not in all proteins and only by a factor of two or less. No compound provided protection at T = 100 K. Scavengers are ineffective in protecting protein crystals from global damage because a large fraction of primary X-ray-induced excitations are generated in and/or directly attack the protein and because the ratio of scavenger molecules to protein molecules is too small to provide appreciable competitive protection. The same reactivity that makes some scavengers effective radioprotectors in protein solutions may explain their sensitizing effect in the protein-dense environment of a crystal. A more productive focus for future efforts may be to identify and eliminate sensitizing compounds from crystallization solutions

  2. Evaluation of erbium:YAG and holmium:YAG laser radiation and dental hard tissue

    Science.gov (United States)

    Attrill, David Cameron

    Lasers have become increasingly established in medicine as effective alternatives or adjuncts to conventional techniques. In dentistry, several clinical laser systems have been developed and marketed, but their applications have been limited to soft tissue surgery. To date, no laser has been capable of effectively cutting or modifying the highly mineralised dental tissues of enamel and dentine. The aim of this study was to evaluate two new laser systems for use in dentistry through a series of in vitro experiments. Both generic erbium and holmium lasers have theoretically superior operating characteristics over currently established lasers for applications with dental hard tissues. The two lasers investigated in this study were pulsed Er:YAG (lambda=2.94) a.m. and Cr-Tm-Ho:YAG (lambda=2.1mu.m). Both operated with a macropulse duration of approximately 200lambdas, at pulse repetition rates of 2-8Hz and mean pulse energies up to 230mJ. Radiation was focused using CaF[2] lenses (f=50-120mm). The lasers could be operated with or without the addition of a surface water film at the interaction site. Tissue removal efficiency was expressed as a latent heat of ablation (LHA, kJ/cm[3]) using a modification of the technique described by Charlton et al. (1990). The mean LHA's for the Er:YAG laser were 6.24kJ/cm[3] and 22.99kJ/cm[3] with dentine and enamel respectively without water, and 10.07kJ/cm[3] and 18.73kJ/cm[3] for dentine and enamel with water. The Cr-Tm-Ho:YAG laser was unable to effectively remove enamel at the fluences and pulse energies available; the mean LHA's for the Cr-Tm- Ho:YAG laser with dentine were 82.79kJ/cm3 and 57.57kJ/cm3 with and without water respectively. The Cr-Tm-Ho;YAG was approximately 8-9 times less efficient for tissue removal than the Er:YAG system. Er:YAG tissue removal with water was characterised by clean "surgical" cuts, comparable in histological appearance to those obtained using conventional instrumentation. Some thermal disruption

  3. Custom synthesized diamond crystals as state of the art radiation dosimeters

    International Nuclear Information System (INIS)

    Keddy, R.J.; Nam, T.L.; Fallon, P.J.

    1991-01-01

    The fact that as a radiation detector, diamond is a stable, non-toxic and tissue equivalent (Z = 6) material makes it an ideal candidate for in vivo radiation dosimetry or the dosimetry of general radiation fields in environmental monitoring. Natural diamond crystals, however, have the disadvantage that no two crystals can be guaranteed to have the same response characteristics. This disadvantage can be overcome by synthesizing the crystals under controlled conditions and by using very selective chemistry. Such synthetic diamonds can be used as thermoluminescence dosimeters where they exhibit characteristics comparable to presently available commercial TLD's or they can be used as ionization chambers to produce either ionization currents or pulses where the small physical size of the diamond (1 mm 3 ) and possibilities of digital circuitry makes miniaturization an extremely attractive possibility. It has also been found that they can perform as scintillation detectors. Aspects of the performance characteristics of such diamonds in all three modes are described

  4. Spectrometric properties and radiation damage of BGO crystals

    Science.gov (United States)

    Kim, Gen C.; Gasanov, Eldar M.

    1997-07-01

    Spectrometric properties, such as light output, energy resolution BGO crystals before and after (superscript 60)Co gamma-ray (dose 10(superscript 4) - 10(superscript 6) R) and neutron irradiation (fluence 10(superscript 14) cm(superscript -2)) are investigated. Condition for degradation of spectrometric properties and their recovering after irradiation are studied. The energy spectrum of the photons emitted from BGO crystals irradiated with neutron fluence contains the long living background peak which is caused by self-irradiation with radioactive isotopes produced in the crystals. The defect production was studied in crystals under the high dose gamma-irradiation with (superscript 60)Co isotope. It was found that after doses above 10(superscript 8) R the color center at 365 nm and doses higher than 10(superscript 9) R a wide absorption band in the region of 300 - 350 nm occur. Comparison of these results with those of reactor irradiation has shown that under the high dose gamma-irradiation the structure defect production takes place.

  5. Dense plasma focus PACO as a hard X-ray emitter: a study on the radiation source

    OpenAIRE

    Supán, L.; Guichón, S.; Milanese, Maria Magdalena; Niedbalski, Jorge Julio; Moroso, Roberto Luis; Acuña, H.; Malamud, Florencia

    2016-01-01

    The radiation in the X-ray range detected outside the vacuum chamber of the dense plasma focus (DPF) PACO, are produced on the anode zone. The zone of emission is studied in a shot-to-shot analysis, using pure deuterium as filling gas. We present a diagnostic method to determine the place and size of the hard X-ray source by image analysis of high density radiography plates. Fil: Supán, L.. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Insti...

  6. Continuous wave ultraviolet radiation induced frustration of etching in lithium niobate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Mailis, S.; Riziotis, C.; Smith, P.G.R.; Scott, J.G.; Eason, R.W

    2003-02-15

    Illumination of the -z face of congruent lithium niobate single crystals with continuous wave (c.w.) ultraviolet (UV) laser radiation modifies the response of the surface to subsequent acid etching. A frequency doubled Ar{sup +} laser ({lambda}=244 nm) was used to illuminate the -z crystal face making it resistive to HF etching and thus transforming the illuminated tracks into ridge structures. This process enables the fabrication of relief patterns in a photolithographic manner. Spatially resolved Raman spectroscopy indicates preservation of the good crystal quality after irradiation.

  7. Gamma radiation effects on photorefractive and photoelectric properties of lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Vartanyan, Eh.S.; Ovsepyan, R.K.; Pogosyan, A.R.; Timofeev, A.L.

    1984-08-01

    Investigations into the gamma radiation effect on the photorefractive aned photoelectric properties of lithium niobate crystals have been carried out for the first time. Gamma irradiation has been found to lead to an increase in the photorefractive sensitivity. The effect of optical decoloration has been discovered for the first time along with photorelaxation currents resulting from radiation center decay under the action of light. It has been shown that an increase of photorefractive sensitivity in gamma-irradiated lithium niobate crystals is caused by a new photorefraction mechanism - photorelaxation currents.

  8. Efficient femtosecond mid-infrared pulse generation by dispersivewave radiation in bulk lithium niobate crystal

    DEFF Research Database (Denmark)

    Zhou, Binbin; Guo, Hairun; Bache, Morten

    2014-01-01

    We experimentally demonstrate efficient mid-infrared pulse generation by dispersive wave radiation in bulk lithium niobate crystal. Femtosecond mid-IR pulses centering from 2.8–2.92 µm are generated using the single pump wavelengths from 1.25–1.45 µm.......We experimentally demonstrate efficient mid-infrared pulse generation by dispersive wave radiation in bulk lithium niobate crystal. Femtosecond mid-IR pulses centering from 2.8–2.92 µm are generated using the single pump wavelengths from 1.25–1.45 µm....

  9. Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

    International Nuclear Information System (INIS)

    Abdrashitov, S.V.; Bogdanov, O.V.; Dabagov, S.B.; Pivovarov, Yu.L.; Tukhfatullin, T.A.

    2013-01-01

    Orientation dependences of channeling radiation total yield from relativistic 155–855 MeV electrons at both 〈1 0 0〉 axial and (1 0 0) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam

  10. Crystal glass and barite used for x ray and gamma radiation shielding

    International Nuclear Information System (INIS)

    Antonio Filho, Joao

    2008-01-01

    Full text: Crystal glass, barite plaster and barite concrete has been widely used as shielding material in gamma radiation sources as well as x-ray generating equipment to replace the plumbiferous glass and in the wall covering, in order to minimize exposure to individuals. However, properties of the radiation attenuation of crystal glass commercially available in Brazil, for the different types of energy are not known. For this reason, this work was carried out aiming to determine the radiation attenuation, transmission curves and Half Value Layer. In this work, ten plates of crystal glass, with dimensions of 20 cm x 20 cm and range of thicknesses from 0.5 to 2.0 cm, and ten plates of barite plaster and five plates of barite concrete, with dimensions of 20 x 20 cm 2 and range of thicknesses from 1,0 to 5,0 cm, were used. The plates were X-ray irradiated with potential constants of 60, 80, 110, 150 kV and gamma radiation of 60 Co. Analysis in the properties of the 60 Co radiation attenuation of barite plaster and barite concrete commercially available in Brazil were also carried out. The curves of attenuation and of transmission were obtained for crystal glass, barite plaster and barite concrete (mGy/m A.min) at 1 meter as a function of thickness. The thickness equivalent of a half value layer and deci value layer of crystal glass for all types of radiation and energies studied was also determined. Although their use permits the dimensioning of the armor covering for external x-radiation whit precision and safety without elevating the cost of protection. (author)

  11. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  12. Protein crystal structure analysis using synchrotron radiation at atomic resolution

    International Nuclear Information System (INIS)

    Nonaka, Takamasa

    1999-01-01

    We can now obtain a detailed picture of protein, allowing the identification of individual atoms, by interpreting the diffraction of X-rays from a protein crystal at atomic resolution, 1.2 A or better. As of this writing, about 45 unique protein structures beyond 1.2 A resolution have been deposited in the Protein Data Bank. This review provides a simplified overview of how protein crystallographers use such diffraction data to solve, refine, and validate protein structures. (author)

  13. Photoconductivity in the chalcohalide semiconductor, SbSeI: a new candidate for hard radiation detection.

    Science.gov (United States)

    Wibowo, Arief C; Malliakas, Christos D; Liu, Zhifu; Peters, John A; Sebastian, Maria; Chung, Duck Young; Wessels, Bruce W; Kanatzidis, Mercouri G

    2013-06-17

    We investigated an antimony chalcohalide compound, SbSeI, as a potential semiconductor material for X-ray and γ-ray detection. SbSeI has a wide band gap of 1.70 eV with a density of 5.80 g/cm(3), and it crystallizes in the orthorhombic Pnma space group with a one-dimensional chain structure comprised of infinite zigzag chains of dimers [Sb2Se4I8]n running along the crystallographic b axis. In this study, we investigate conditions for vertical Bridgman crystal growth using combinations of the peak temperature and temperature gradients as well as translation rate set in a three-zone furnace. SbSeI samples grown at 495 °C peak temperature and 19 °C/cm temperature gradient with 2.5 mm/h translation rate produced a single phase of columnar needlelike crystals aligned along the translational direction of the growth. The ingot sample exhibited an n-type semiconductor with resistivity of ∼10(8) Ω·cm. Photoconductivity measurements on these specimens allowed us to determine mobility-lifetime (μτ) products for electron and hole carriers that were found to be of similar order of magnitude (∼10(-4) cm(2)/V). Further, the SbSeI ingot with well-aligned, one-dimensional columnar needlelike crystals shows an appreciable response of Ag Kα X-ray.

  14. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    Energy Technology Data Exchange (ETDEWEB)

    Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Cartier, S. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Institute for Biomedical Engineering, University and ETHZ, 8092 Zürich (Switzerland); Medjoubi, K. [Synchrotron Soleil, L’Orme des Merisiers, Saint-Aubin–BP 48, 91192 GIF-sur-Yvette Cedex (France)

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  15. Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER

    International Nuclear Information System (INIS)

    Ito, Akira; Obara, Kenjiro; Tada, Eisuke; Morita, Yousuke; Yagi, Toshiaki; Iida, Kazuhisa; Sato, Masaru.

    1997-12-01

    Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER (International Thermonuclear Experimental Reactor) has been conducted. Since the in-vessel remote maintenance equipment is operated under the condition of 10 6 R/h gamma ray dose rate, the electric connector has to be radiation hard for an accumulation dose of 10 10 R. In addition, the simple attachment/removal mechanism is essential for remote operation. For this, the alumina (Al203) ceramics and a ball bearing were adopted to electric insulator and plug (male) of connector, respectively. The handling tests on attachment/removal of the connector were conducted by using master slave manipulator and general purpose robot with handling tool, and as a result, the validity of the attachment/removal mechanism was verified. In the gamma ray irradiation tests, which are under way, no degradation in break down voltage (1000V 1min.) up to 10 10 R was confirmed. However insulation resistance and contact resistance between contact pin and contact socket were deteriorated in proportion to the accumulation dose. Increase of contact resistance is considered due to an erosion of contact pin. (author)

  16. Recent Progress in Synchrotron Radiation Photoemission Spectroscopy of Solids : Applications of VUV, Soft and Hard X-Ray Radiation

    International Nuclear Information System (INIS)

    Taniguchi, M.

    2004-01-01

    The Hiroshima Synchrotron Radiation Center is a common facility for both research and education in the field of synchrotron radiation science. The operation of the light source was started from March 1998. The storage ring can be operated at 700 MeV with a critical energy of 873 eV. The machine has a racetrack shape with a circumference of 22 m, and has 14 photon beam ports. The maximum operational current is 300 mA, and the beam lifetime is longer than 6 h at 200 mA. Of total 13 beamlines introduced so far, three beamlines are dedicated to photoemission spectroscopy (PES). An available photon-energy range is hν=26-300 eV. A hemispherical photoelectron analyzer is equipped at the end station. Total energy resolution has been achieved to ∼ 15 meV at hν=100 eV. The photon-energy range is hν=4-40 eV and total energy resolution is ∼ 4.5 meV at hν=7 eV. Although total energy resolution has been achieved to ∼25 meV at hν=80 eV, we usually carry out the PES experiments. The PES spectra taken at hν∼7 eV provide information on the conduction band electrons. In order to investigate the bulk-originated electronic structure we started the hard x-ray PES experiments with a total energy resolution of ∼ 270 meV. Thus, we promote the research project with use of light in a wide energy-range (7 eV-6 keV). 1) Unusual energy gap formation in the Kondo semiconductor CeRhAs has attracted much interest for its unusual energy gap formation or metal-to-insulator transition as temperature decreases. The energy gap is assumed to be formed by the temperature dependence of the c-f hybridization. By means of resonant PES, we could observe a energy-gap structure in the Ce 4f states. In order to observe As 4p state and Rh 4d state, we have measured the PES spectra at hν=7.9 eV, 40 eV and 6 keV, respectively, due to the photon-energy dependence of photoionization cross-section. From the spectra at hν=7.9 eV, we could see that the density of states (DOS) near E F decreases with

  17. Work Hard / Play Hard

    OpenAIRE

    Burrows, J.; Johnson, V.; Henckel, D.

    2016-01-01

    Work Hard / Play Hard was a participatory performance/workshop or CPD experience hosted by interdisciplinary arts atelier WeAreCodeX, in association with AntiUniversity.org. As a socially/economically engaged arts practice, Work Hard / Play Hard challenged employees/players to get playful, or go to work. 'The game changes you, you never change the game'. Employee PLAYER A 'The faster the better.' Employer PLAYER B

  18. Widely tunable femtosecond solitonic radiation in photonic crystal fiber cladding

    DEFF Research Database (Denmark)

    Peng, J. H.; Sokolov, A. V.; Benabid, F.

    2010-01-01

    We report on a means to generate tunable ultrashort optical pulses. We demonstrate that dispersive waves generated by solitons within the small-core features of a photonic crystal fiber cladding can be used to obtain femtosecond pulses tunable over an octave-wide spectral range. The generation...... process is highly efficient and occurs at the relatively low laser powers available from a simple Ti:sapphire laser oscillator. The described phenomenon is general and will play an important role in other systems where solitons are known to exist....

  19. Radiation defects produced by neutron irradiation in germanium single crystals

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

    1992-01-01

    The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

  20. Integrating Two-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The space radiation environment presents a significant hazard to the critical electronic components used in a variety of space applications. Many such applications...

  1. Radiation Hard Wide Temperature Range Mixed-Signal Components, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Low temperature survivability, high performance and radiation tolerance of electronics in combination is required for NASA's surface missions. Modern sub-micron CMOS...

  2. World Health Organization, radiofrequency radiation and health - a hard nut to crack (Review)

    OpenAIRE

    Hardell, Lennart

    2017-01-01

    In May 2011 the International Agency for Research on Cancer (IARC) evaluated cancer risks from radiofrequency (RF) radiation. Human epidemiological studies gave evidence of increased risk for glioma and acoustic neuroma. RF radiation was classified as Group 2B, a possible human carcinogen. Further epidemiological, animal and mechanistic studies have strengthened the association. In spite of this, in most countries little or nothing has been done to reduce exposure and educate people on health...

  3. Radiation-hard analog-to-digital converters for space and strategic applications

    Science.gov (United States)

    Gauthier, M. K.; Dantas, A. R. V.

    1985-01-01

    During the course of the Jet Propulsion Laboratory's program to study radiation-hardened analog-to-digital converters (ADCs), numerous milestones have been reached in manufacturers' awareness and technology development and transfer, as well as in user awareness of these developments. The testing of ADCs has also continued with twenty different ADCs from seven manufacturers, all tested for total radiation dose and three tested for neutron effects. Results from these tests are reported.

  4. Military Handbook: Management and Design Guidance Electromagnetic Radiation Hardness for Air Launched Ordnance Systems

    Science.gov (United States)

    1981-01-15

    system is attacted to the delivery aircraft until it Impacto a target, it is exposed to electromagnetic radiation from emitters aboard the delivery...homogeneous, isotropic, ambient medium may be a lossy dielectric. Antenna computations include cur- rent distribution, input impedance, radiation...permissible ambient interference level in the system, and when determining the expected signal-to-inter- ference ratio of the signal transmission circuits

  5. arXiv Strong reduction of the effective radiation length in an oriented PWO scintillator crystal

    CERN Document Server

    Bandiera, L.; Romagnoni, M.; Argiolas, N.; Bagli, E.; Ballerini, G.; Berra, A.; Brizzolani, C.; Camattari, R.; De Salvador, D.; Haurylavets, V.; Mascagna, V.; Mazzolari, A.; Prest, M.; Soldani, M.; Sytov, A.; Vallazza, E.

    We measured a considerable increase of the emitted radiation by 120 GeV/c electrons in an axially oriented lead tungstate scintillator crystal, if compared to the case in which the sample was not aligned with the beam direction. This enhancement resulted from the interaction of particles with the strong crystalline electromagnetic field. The data collected at the external lines of CERN SPS were critically compared to Monte Carlo simulations based on the Baier Katkov quasiclassical method, highlighting a reduction of the scintillator radiation length by a factor of five in case of beam alignment with the [001] crystal axes. The observed effect opens the way to the realization of compact electromagnetic calorimeters/detectors based on oriented scintillator crystals in which the amount of material can be strongly reduced with respect to the state of the art. These devices could have relevant applications in fixed-target experiments as well as in satellite-borne gamma-telescopes.

  6. Room-temperature effects of UV radiation in KBr:Eu{sup 2+} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Salas, R; Melendrez, R [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada - IFUNAM, Ensenada, Apartado Postal 2732 Ensenada, BC, 22800 (Mexico); Aceves, R; Rodriguez, R; Barboza-Flores, M [Centro de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088 Hermosillo, Sonora, 83190 (Mexico)

    1996-07-01

    Thermoluminescence and optical absorption measurements have been carried out in KBr:Eu{sup 2+} crystals irradiated with monochromatic UV light (200-300 nm) and x-rays at room temperature. For UV- and x-irradiated crystals strong similarities between the thermoluminescence glow curves have been found, suggesting that the low-energy UV radiation produces the same defects as produced by x-irradiation in this material. The thermoluminescence glow curves are composed of six glow peaks located at 337, 383, 403, 435, 475 and 509 K. Thermal annealing experiments in previously irradiated crystals show clearly a correlation between the glow peak located at 383 K and the F-centre thermal bleaching process. Also, the excitation spectrum for each thermoluminescence glow peak has been investigated, showing that the low-energy radiation induces the formation of F centres. (author)

  7. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  8. Optical properties and radiation response of Ce3+-doped GdScO3 crystals

    International Nuclear Information System (INIS)

    Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke; Kochurikhin, Vladimir; Yanagida, Takayuki; Yoshikawa, Akira

    2012-01-01

    10%-Ce doped GdScO 3 perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO 3 crystal showed photo- and radio-luminescence peaks due to Ce 3+ of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Trapped electronic states in YAG crystal excited by femtosecond radiation

    Energy Technology Data Exchange (ETDEWEB)

    Zavedeev, E.V.; Kononenko, V.V.; Konov, V.I. [General Physics Institute of RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2017-07-15

    The excitation of an electronic subsystem of an yttrium aluminum garnet by 800 nm femtosecond radiation was studied theoretically and experimentally. The spatio-temporal dynamics of the refractive index (n) inside the beam waist was explored by means of the pump-probe interferometric technique with a submicron resolution. The observed increase in n indicated the formation of bound electronic states relaxed for ∝ 150 ps. We showed that the experimental data agreed with the computational simulation based on the numerical solution of the nonlinear Schroedinger equation only if these transient states were considered to arise from a direct light-induced process but not from the decay of radiatively generated free-electron-hole pairs. (orig.)

  10. World Health Organization, radiofrequency radiation and health - a hard nut to crack (Review).

    Science.gov (United States)

    Hardell, Lennart

    2017-08-01

    In May 2011 the International Agency for Research on Cancer (IARC) evaluated cancer risks from radiofrequency (RF) radiation. Human epidemiological studies gave evidence of increased risk for glioma and acoustic neuroma. RF radiation was classified as Group 2B, a possible human carcinogen. Further epidemiological, animal and mechanistic studies have strengthened the association. In spite of this, in most countries little or nothing has been done to reduce exposure and educate people on health hazards from RF radiation. On the contrary ambient levels have increased. In 2014 the WHO launched a draft of a Monograph on RF fields and health for public comments. It turned out that five of the six members of the Core Group in charge of the draft are affiliated with International Commission on Non-Ionizing Radiation Protection (ICNIRP), an industry loyal NGO, and thus have a serious conflict of interest. Just as by ICNIRP, evaluation of non-thermal biological effects from RF radiation are dismissed as scientific evidence of adverse health effects in the Monograph. This has provoked many comments sent to the WHO. However, at a meeting on March 3, 2017 at the WHO Geneva office it was stated that the WHO has no intention to change the Core Group.

  11. Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance

    International Nuclear Information System (INIS)

    Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze

    1997-01-01

    The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules

  12. A mixed analog-digital radiation hard technology for high energy physics electronics DMILL (Durci Mixte sur Isolant Logico-Linéaire)

    CERN Document Server

    Beuville, E; Borgeaud, P; Fourches, N T; Rouger, M; Blanc, J P; Bruel, M; Delevoye-Orsier, E; Gautier, J; Du Port de Pontcharra, J; Truche, R; Dupont-Nivet, E; Flament, O; Leray, J L; Martin, J L; Montaron, J; Borel, G; Brice, J M; Chatagnon, P; Terrier, C; Aubert, Jean-Jacques; Delpierre, P A; Habrard, M C; Potheau, R; CERN. Geneva. Detector Research and Development Committee

    1992-01-01

    The high radiation level expected in the inner regions of the high luminosity LHC detectors (gamma and neutron) will require radiation hardened electronics. A consortium between the CEA (Commissariat a l'Energie Atomique) and Thomson TMS (Thomson Composants Militaires et Spatiaux) has been created to push for the development and the industrialization of a nascent technology which looks particularly adapted to the needs of HEP electronics. This technology, currently under development at the LETI(CEA), uses a SIMOX substrate with an epitaxial silicon film. It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. The CMOS and bipolar transistors constitute a rad-hard BiCMOS which will be useful to design analog and digital high-speed architectures. JFETs, which have intrinsically high hardness behaviour and low noise performances even at low temperature will enable very rad-hard, low noise front end electronics to be designed. Present results, together with the improvemen...

  13. Neutron radiation damage in NbO single crystals

    International Nuclear Information System (INIS)

    Onozuka, T.; Koiwa, M.; Ishikawa, Y.; Yamaguchi, S.; Hirabayashi, M.

    1977-01-01

    The effect of neutron irradiation and subsequent recovery has been studied for Nb0 single crystals of a defective NaCl structure containing 25% vacancies of niobium and oxygen. A very large increase (about 1%) in the lattice constant is observed after irradiation of 1.5 x 10 19 and 1 x 10 20 nvt (> 1 MeV). From the intensity measurements of x-ray and neutron diffraction, it is revealed that the knock-on atoms fill preferentially their respective vacant sites; Nb atoms occupy Nb-vacancies, and 0 atoms occupy 0-vacancies with nearly the same probabilities; 0.53 for 1.5 x 10 19 nvt. The mean threshold energy for displacement is estimated to be about 3 eV. (author)

  14. Radiation damage mechanisms in single crystals of creatine monohydrate

    International Nuclear Information System (INIS)

    Wells, J.W.; Ko, C.

    1978-01-01

    ENDOR spectroscopy is utilized to define the temperature dependent sequence of molecular fragmentation processes occuring in x-irradiated single crystals of creatine monohydrate. Two conformations of the primary reduction product =OOC--C(H 2 ) --N(CH) 3 --C(NH 2 ) 2 + are found to undergo a series of subtle changes before deamination. The resultant radical -OOC--CH 2 then induces hydrogen abstraction to form a final room temperature product - OOC--CH--N(CH 3 ) --C(NH 2 ) + . An unknown initial oxidation species is found to decarboxylate forming the radical H 2 C--N(CH 3 ) --C(NH 2 ) 2 + which, although similar to the deamination product, exists at room temperature. The stability of this species is attributed to a delocalization of spin indicated by calculation and measurement

  15. Radiation hardening at 77 K in Zn and Cu single crystals at low doses

    International Nuclear Information System (INIS)

    Gonzalez, H.C.; Bisogni, E.A.

    1980-01-01

    There is controversy about radiation hardening phenomenon and its additivity with other hardening mechanisms. The purpose of this work is to contribute to the understanding of this subject, through measurements made in Zn and Cu single crystals. Post-irradiation measurements of yield stress of Zn, made on different single crystals, show a direct proportionality to the 0.5 power of the dose. It is determined that for a dose greater than 3.7 x 10 16 neutrons cm -2 s -1 there is always cleavage. The maximum critical resolved shear stress measured is about 8.82 MPa. In order to study additivity it is necessary to lower experimental errors. A micro tensile machine is designed to operate in the CNEA facility RA1 in a bath of liquid N 2 . Experimental measurements of yield stress with dose are carried out in-situ on the same single crystals. Experimental results on Cu and Zn show that radiation induced yield stress increases with a 0.5 power law. It must be taken into account that the definition of radiation induced yield stress stands for radiation created obstacles operating alone. The radiation induced yield stress adds algebraically to the athermal component of the initial yield stress but is not exactly additive to the other thermally activated mechanisms. A gradual transition from one to the other type of obstacles is observed. (author)

  16. Custom high-reliability radiation-hard CMOS-LSI circuit design

    International Nuclear Information System (INIS)

    Barnard, W.J.

    1981-01-01

    Sandia has developed a custom CMOS-LSI design capability to provide high reliability radiation-hardened circuits. This capability relies on (1) proven design practices to enhance reliability, (2) use of well characterized cells and logic modules, (3) computer-aided design tools to reduce design time and errors and to standardize design definition, and (4) close working relationships with the system designer and technology fabrication personnel. Trade-offs are made during the design between circuit complexity/performance and technology/producibility for high reliability and radiation-hardened designs to result. Sandia has developed and is maintaining a radiation-hardened bulk CMOS technology fabrication line for production of prototype and small production volume parts

  17. GfW-handbook for irradiation test guidelines for radiation hardness of electronic components

    International Nuclear Information System (INIS)

    Braeunig, D.; Wulf, F.; Gaebler, W.; Boden, A.

    1982-12-01

    The purpose of the report is to propose irradiation test methods so that a standardized application of the methods can lead to a better comparison of test results. The interaction of different radiation species with matter - ionization and displacement - is described. Application of appropriate radiation sources, dosimetry problems, and shielding for simulating space radiation effects by laboratory testing is discussed. The description and characteristics of the irradiation sources are presented. Flowcharts of the planning and running of irradiation tests are given. Guidelines for running the tests are established, test methods and test circuits are proposed. The test system offers the capability of measuring devices also of high complexity up to microprocessors. The test results are collected regularly and are published in GfW-Handbook TN53/08, 'Data Compilation of Irradiation Tested Electronic Components'. (orig./HP) [de

  18. Radiation-hard, high efficiency InP solar cell and panel development

    International Nuclear Information System (INIS)

    Keavney, C.J.; Vernon, S.M.; Haven, V.E.; Nowlan, M.J.; Walters, R.J.; Slatter, R.L.; Summers, G.P.

    1991-01-01

    Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm 2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 10 15 1 MeV electrons, and 12% after 10 16 . These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

  19. Investigation of characteristics and radiation hardness of the Beetle 1.0 front-end chip

    CERN Document Server

    Van Bakel, N; Jans, E; Klous, S; Verkooijen, H

    2001-01-01

    Noise characteristics of the Beetle 1.0 front-end chip have been investigated as a function of input capacitance. Values for the equivalent noise charge and ballastic deficit have been extracted. Amplification and pulse shape have been studied by varying the bias settings over a wide range. Results are compared with simulations that include realistic impedances at the input and output. The chip has been subjected to 10 Mrad of radiation. Subsequently, its behaviour is measured again and compared to that preceeding the irradiation. Observed radiation damage effects are discussed.

  20. Radiation hardness and qualification of semiconductor electronic devices for nuclear reactors

    International Nuclear Information System (INIS)

    Friant, A.; Payat, R.

    1984-05-01

    After a brief review of radiation effects in semiconductors and radiation damage in semiconductor devices, the problems of qualification of electronic equipment to be used in nuclear reactors are compared to those relative to nuclear weapons or space experiments. The conclusion is that data obtained at very high dose rates or under pulsed irradiation in weapons and space programs should not be directly applied to nuclear plant instrumentation. The need for a specific qualification of semiconductor devices appropriate for nuclear reactors is emphasized. Some irradiation studies at IRDI/DEIN (CEN-Saclay) are related [fr

  1. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    CERN Document Server

    Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

    1999-01-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

  2. Studies for the LHCb SciFi Tracker - Development of Modules from Scintillating Fibres and Tests of their Radiation Hardness

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00341158

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of $\\text 250 \\mu m$, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to $83 \\%$ on average at the end of the nominal lifetime of ...

  3. Studies for the LHCb SciFi tracker. Development of modules from scintillating fibres and tests of their radiation hardness

    Energy Technology Data Exchange (ETDEWEB)

    Ekelhof, Robert Jan

    2016-05-18

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of 250 μm, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to 83% on average at the end of the nominal lifetime of the SciFi Tracker. A machine and techniques to produce multi-layer fibre mats were developed and optimised. Procedures for the production and alignment are described. These are implemented in the serial production of the SciFi modules which will start in the second quarter 2016.

  4. Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

    Science.gov (United States)

    2016-10-01

    the wedge to a nanomanipulator probe. d- Lifting -out of the wedge from the bulk sample. e- Attachment of a portion of the wedge to one of the silicon...out by subcontractor Scientic, Inc. The exposures were conducted at the Gamma Radiation Facility at NAVSEA Crane division with doses up to ~6 Mrad

  5. Radiation effects and hardness of semiconductor electronic devices for nuclear industry

    International Nuclear Information System (INIS)

    Payat, R.; Friant, A.

    1988-01-01

    After a brief review of industrial and nuclear specificity and radiation effects in electronics components (semiconductors) the need for a specific test methodology of semiconductor devices is emphasized. Some studies appropriate for nuclear industry at D. LETI/DEIN/CEN-SACLAY are related [fr

  6. Evaluation of radiation effects on dental enamel hardness and dental restorative materials

    International Nuclear Information System (INIS)

    Adachi, Lena Katekawa; Saiki, Mitiko; Campos, Tomie Nakakuki

    2000-01-01

    This research presents the results of the microhardness of human dental enamel and of the following dental restorative materials: three dental porcelains - Ceramco II, Finesse and Noritake, and two resin restorative materials - Artglass and Targis, for materials submitted to different times of irradiation at the IEA-R1m nuclear reactor under a thermal neutron flux of 10 12 n cm -2 .s -1 . The results obtained indicated that there is a decrease of the surface microhardness when the enamel is irradiated for 1 h and when dental materials are irradiated for 3 h. However, enamels irradiated for 30 min. did not show significant change of their surface hardness. Therefore, the selection of irradiation time is an important factor to be considered when irradiated teeth or dental materials are used in the investigations of their properties. (author)

  7. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Science.gov (United States)

    Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2018-01-01

    The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

  8. Methodology optimization of the thallium bromide crystal preparation for application as a radiation detector

    International Nuclear Information System (INIS)

    Santos, Robinson Alves dos

    2012-01-01

    In this work, TlBr crystals have been purified and grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors. To evaluate the purification efficiency, studies on the impurity concentration decrease were performed after each growth, analyzing the trace impurities by inductively coupled plasma mass spectroscopy (ICP-MS). A significant decrease of the concentration of impurities in function of the purification number was observed. The grown crystals presented good crystalline quality according to the results of the x-ray diffraction analysis. To evaluate the crystals to be used as a semiconductor detector, measurements of the resistivity and the pulse height under 241 Am gamma rays were carried out. The radiation response was strongly dependent on the crystal purity. The Repeated Bridgman technique showed to be effective to reduce the concentration of impurities and to improve the TlBr crystal quality to be used as a radiation semiconductor detector. A compartmental model was proposed to fit the concentration/segregation of impurities in function of the Bridgman growth step number. This compartmental model is defined by differential equations and can be used to calculate the rate of migration of impurities. It proved to be a useful tool in predicting the number of Bridgman growth repetitions necessary to achieve the desired impurity concentration. The difference of the impurity migration rates between the crystals grown, using salts from different origins, was significant. Therefore, the choice of the starting salt should be performed experimentally, regardless of the statement nominal purity. (author)

  9. Effects of gamma radiation on hard dental tissues of albino rats using scanning electron microscope - Part 1

    Science.gov (United States)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; Maghraby, Ahmed; El-Zainy, Medhat

    2011-12-01

    In the present study, 40 adult male albino rats were used to study the effect of gamma radiation on the hard dental tissues (enamel surface, dentinal tubules and the cementum surface). The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy gamma doses. The effects of irradiated hard dental tissues samples were investigated using a scanning electron microscope. For doses up to 0.5 Gy, there was no evidence of the existence of cracks on the enamel surface. With 1 Gy irradiation dose, cracks were clearly observed with localized erosive areas. At 2 Gy irradiation dose, the enamel showed morphological alterations as disturbed prismatic and interprismatic areas. An increase in dentinal tubules diameter and a contemporary inter-tubular dentine volume decrease were observed with higher irradiation dose. Concerning cementum, low doses,<0.5 Gy, showed surface irregularities and with increase in the irradiation dose to≥1 Gy, noticeable surface irregularities and erosive areas with decrease in Sharpey's fiber sites were observed. These observations could shed light on the hazardous effects of irradiation fields to the functioning of the human teeth.

  10. Study on efficiency of multi-wire tungsten moderator for slow positron source on SPring-8 hard synchrotron radiation

    International Nuclear Information System (INIS)

    Plokhoi, Vladimir; Kandiev, Yadgar; Samarin, Sergey; Malyshkin, Gennady; Baidin, Grigory; Litvinenko, Igor; Nikitin, Valery

    1999-01-01

    The paper provides results of numeric simulations of in-target positron production process, processes of moderation, thermalization, diffusion, and reemission of positrons in high efficiency multi-wire moderator made of tungsten monocrystalline wire with regular wire spacing. The paper looks into dynamics of slow positrons in the moderator's vacuum gaps taking into account of external fields. The possibility for using multi-wire moderator with non-regular structure - multi-layer w ire felt m oderator is discussed. According to maximal estimate the multi-wire moderators can reach very high efficiency of fast-slow positron transformation ∼ 10 -2 . Using such moderator the intensity of slow positron source on hard synchrotron radiation of Spring-8 can reach the level of ∼10 11 e + /s. (author)

  11. Lithium niobate bulk crystallization promoted by CO{sub 2} laser radiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M., E-mail: nmferreira@ua.pt [i3N - Aveiro, Physics Department, Aveiro University, Campus Universitario de Santiago, 3810-193 Aveiro (Portugal); Costa, F.M. [i3N - Aveiro, Physics Department, Aveiro University, Campus Universitario de Santiago, 3810-193 Aveiro (Portugal); Nogueira, R.N. [Instituto de Telecomunicacoes, 3810-193 Aveiro (Portugal); Graca, M.P.F. [i3N - Aveiro, Physics Department, Aveiro University, Campus Universitario de Santiago, 3810-193 Aveiro (Portugal)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Crystallization of LiNbO{sub 3} nanocrystals in a SiO{sub 2} matrix by CO{sub 2} laser irradiation process. Black-Right-Pointing-Pointer Samples heat-treated at 650 Degree-Sign C (4 h) and laser treated (4 W/500 s) show similar morphology. Black-Right-Pointing-Pointer Glass-ceramics produced by laser process requires a very low processing time. - Abstract: The crystallization induced by laser radiation is a very promising technique to promote glass/ceramic transformation, being already used to produce crystalline patterns on glass surfaces. In this work, a SiO{sub 2}-Li{sub 2}O-Nb{sub 2}O{sub 5} glass, prepared by the sol-gel route, was submitted to CO{sub 2} laser radiation and conventional heat-treatments in order to induce the LiNbO{sub 3} crystallization. The structure and morphology of the samples prepared by both routes was analyzed as a function of exposure time, radiation power and heat-treatment temperatures by XRD, Raman spectroscopy and SEM. The results reveal a correlation between the crystallization degree of LiNbO{sub 3} particles and glass matrix with the heat treatment type and experimental parameters. An heat-treatment at 650 Degree-Sign C/4 h was necessary to induce crystallization in heat treatments samples while 4 W/500 s was enough for laser radiation ones, corresponding a reduction time processing of {approx}14 000 s.

  12. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

    CERN Document Server

    Huffman, B T; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C; Caragiulo, P; Das, D; Dopke, J; Dragone, A; Ehrler, F; Fadeyev, V; Galloway, Z; Grabas, H; Gregor, I M; Grenier, P; Grillo, A; Hoeferkamp, M; Hommels, L B A; John, J; Kanisauskas, K; Kenney, C; Kramberger, J; Liang, Z; Mandic, I; Maneuski, D; Martinez-McKinney, F; McMahon, S; Meng, L; Mikuž, M; Muenstermann, D; Nickerson, R; Peric, I; Phillips, P; Plackett, R; Rubbo, F; Segal, J; Seidel, S; Seiden, A; Shipsey, I; Song, W; Stanitzki, M; Su, D; Tamma, C; Turchetta, R; Vigani, L; olk, J; Wang, R; Warren, M; Wilson, F; Worm, S; Xiu, Q; Zhang, J; Zhu, H

    2016-01-01

    The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

  13. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    CERN Document Server

    Jivan, Harshna; The ATLAS collaboration

    2014-01-01

    The Tile Calorimeter of the ATLAS detector, is a hadronic calorimeter responsible for detecting hadrons as well as accommodating for the missing transverse energy that result from the p-p collisions within the LHC. Plastic scintillators form an integral component of this calorimeter due to their ability to undergo prompt fluorescence when exposed to ionising particles. The scintillators employed are specifically chosen for their properties of high optical transmission and fast rise and decay time which enables efficient data capture since fast signal pulses can be generated. The main draw-back of plastic scintillators however is their susceptibility to radiation damage. The damage caused by radiation exposure reduces the scintillation light yield and introduces an error into the time-of flight data acquired. During Run 1 of the LHC data taking period, plastic scintillators employed within the GAP region between the Tile Calorimeter’s central and extended barrels sustained a significant amount of damage. Wit...

  14. Radiation hardness of silicon detectors - a challenge from high-energy physics

    CERN Document Server

    Lindström, G; Fretwurst, E

    1999-01-01

    An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

  15. Radiation interlocks - The choice between conventional hard-wired logic and computer-based systems

    International Nuclear Information System (INIS)

    Crook, K.F.

    1987-01-01

    During the past few years, the use of computers in radiation safety systems has become more widespread. This is not surprising given the ubiquitous nature of computers in the modern technological world. But is a computer a good choice for the central logic element of a personnel safety system? Recent accidents at computer controlled medical accelerators would indicate that extreme care must be exercised if malfunctions are to be avoided. The Department of Energy (DOE) has recently established a sub-committee to formulate recommendations on the use of computers in safety systems for accelerators. This paper reviews the status of the committee's recommendations, and describes radiation protection interlock systems as applied to both accelerators and to irradiation facilities. Comparisons are made between the conventional (relay) approach and designs using computers

  16. Radiation interlocks: The choice between conventional hard-wired logic and computer-based systems

    International Nuclear Information System (INIS)

    Crook, K.F.

    1986-11-01

    During the past few years, the use of computers in radiation safety systems has become more widespread. This is not surprising given the ubiquitous nature of computers in the modern technological world. But is a computer a good choice for the central logic element of a personnel safety system. Recent accidents at computer controlled medical accelerators would indicate that extreme care must be exercised if malfunctions are to be avoided. The Department of Energy has recently established a sub-committee to formulate recommendations on the use of computers in safety systems for accelerators. This paper will review the status of the committee's recommendations, and describe radiation protection interlock systems as applied to both accelerators and to irradiation facilities. Comparisons are made between the conventional relay approach and designs using computers. 6 refs., 6 figs

  17. Radiation-hard ceramic Resistive Plate Chambers for forward TOF and T0 systems

    Energy Technology Data Exchange (ETDEWEB)

    Akindinov, A., E-mail: Alexander.Akindinov@cern.ch [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Dreyer, J.; Fan, X.; Kämpfer, B. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Kiselev, S. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Kotte, R.; Garcia, A. Laso [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Malkevich, D. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Naumann, L. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Nedosekin, A.; Plotnikov, V. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Stach, D. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Sultanov, R.; Voloshin, K. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation)

    2017-02-11

    Resistive Plate Chambers with ceramic electrodes are the main candidates for a use in precise multi-channel timing systems operating in high-radiation conditions. We report the latest R&D results on these detectors aimed to meet the requirements of the forward T0 counter at the CBM experiment. RPC design, gas mixture, limits on the bulk resistivity of ceramic electrodes, efficiency, time resolution, counting rate capabilities and ageing test results are presented.

  18. Parallel beam microradiography of dental hard tissue using synchrotron radiation and X-ray image magnification

    International Nuclear Information System (INIS)

    Takagi, S.; Chow, L.C.; Brown, W.E.; Dobbyn, R.C.; Kuriyama, M.

    1984-01-01

    A novel technique utilizing a highly parallel beam of monochromatic synchrotron radiation combined with X-ray image magnification has been used to obtain microradiographs of caries lesions in relatively thick tooth sections. Preliminary results reveal structural features not previously reported. This technique holds the promise of allowing one to follow the structural changes accompanying the formation, destruction and chemical repair of mineralized tissue in real time. (orig.)

  19. Technique for selection of transient radiation-hard junction-isolated integrated circuits

    International Nuclear Information System (INIS)

    Crowley, J.L.; Junga, F.A.; Stultz, T.J.

    1976-01-01

    A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit

  20. The fractal character of radiation defects aggregation in crystals

    International Nuclear Information System (INIS)

    Akylbekov, A.; Akimbekov, E.; Baktybekov, K.; Vasil'eva, I.

    2002-01-01

    In processes of self-organization, which characterize open systems, the source of ordering is a non-equilibrium. One of the samples of ordering system is radiation-stimulated aggregation of defects in solids. In real work the analysis of criterions of ordering defects structures in solid, which is continuously irradiate at low temperature is presented. The method of cellular automata used in simulation of irradiation. It allowed us to imitate processes of defects formation and recombination. The simulation realized on the surfaces up to 1000x1000 units with initial concentration of defects C n (the power of dose) 0.1-1 %. The number of iterations N (duration of irradiation) mounted to 10 6 cycles. The single centers, which are the sources of formation aggregates, survive in the result of probabilistic nature of formation and recombination genetic pairs of defects and with strictly fixed radius of recombination (the minimum inter anionic distance). For determination the character of same type defects distribution the potential of their interaction depending of defects type and reciprocal distance is calculated. For more detailed study of processes, proceeding in cells with certain sizes of aggregates, the time dependence of potential interaction is constructed. It is shown, that on primary stage the potential is negative, then it increase and approach the saturation in positive area. The minimum of interaction potential corresponds to state of physical chaos in system. Its increasing occurs with formation of same type defects aggregates. Further transition to saturation and 'undulating' character of curves explains by formation and destruction aggregates. The data indicated that - these processes occur simultaneously in cells with different sizes. It allows us to assume that the radiation defects aggregation have a fractal nature

  1. Radiation hardness and precision timing study of Silicon detectors for the CMS High Granularity Calorimeter (HGC)

    CERN Document Server

    Curras, E; Gallrapp, C; Gray, L; Mannelli, M; Meridiani, P; Moll, M; Nourbakhsh, S; Scharf, C; Silva, P; Steinbrueck, G; Tabarelli de Fatis, T; Vila, I

    2017-01-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb^−1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm^2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb^−1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10^16 neq/cm^2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μ...

  2. The MONOS memory transistor: application in a radiation-hard nonvolatile RAM

    International Nuclear Information System (INIS)

    Brown, W.D.

    1985-01-01

    The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 0 C oxidation step and some were then annealed at 900 0 C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10 9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10 6 rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10 9 cycles and 10 6 rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a +- 23-V 16-μsec write/erase pulse. (author)

  3. SIMON [Semi-Intelligent Mobile Observing Navigator] combines radiation hardness with computer power

    International Nuclear Information System (INIS)

    Weber, P.J.; Vanecek, C.W.

    1990-01-01

    SIMON - the Semi-Intelligent Mobile Observing Navigator - has been under development at the US Department of Energy's (DoE's) Savannah River Laboratory for four years. The robot's on-board intelligence units are designed to be radiation-resistant, making it able to function for extended periods within a remotely operated facility. In its current form, SIMON is being developed by the laboratory's Robotics Group for use in the site's production reactors, but it can be adapted for use in any nuclear facility, including commercial reactors. The challenge for Savannah River Laboratory engineers was to eliminate the need for human inspection of certain components. To do this, they designed a robot that could do three things for reactor operators: measure radiation; measure temperature; and provide televised views inside the reactor facility. To be useful, the robot has to be extremely mobile, and its components had to be able to survive months without maintenance in the radiation, temperature and humidity encountered in nuclear facilities. The robot also had to be cost-effective. (author)

  4. Effect of the electronic structure of the etched CdTe single crystals on the exciton radiation processes

    International Nuclear Information System (INIS)

    Tkachuk, P.M.; Tkachuk, V.Yi.; Mel'nichuk, S.V.; Kurik, M.V.

    2005-01-01

    Under optical excitation the structure of the radiation beyond fundamental absorption of the orientated CdTe single crystals caused by LO-phonon scattering processes of the electron-hole states is observed. Crystals have been doped with impurity of Cl as a result of the surface preparing by etching in Br-methanol. Electronic structure of the single crystals surface layer is identified on the basis of two-phonon radiation absorption investigation. Taking into account the modes selection rules the one and two phonon scattering mechanisms for two crystals surface orientations are determined

  5. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    Energy Technology Data Exchange (ETDEWEB)

    Currás, Esteban, E-mail: ecurrasr@cern.ch [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Fernández, Marcos [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Gallrapp, Christian [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Gray, Lindsey [Fermilab, Wilson Street and Kirk Road, Batavia, IL 60510-5011, Illinois (United States); Mannelli, Marcello [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Meridiani, Paolo [Istituto Nazionale Di Fisica Nucleare – Sezione di Roma, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Moll, Michael [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Nourbakhsh, Shervin [University of Minnesota, Minneapolis, MN 55455 (United States); Scharf, Christian [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Silva, Pedro [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Steinbrueck, Georg [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Fatis, Tommaso Tabarelli de [Istituto Nazionale di Fisica Nucleare – Sezione di Milano-Bicocca Piazza della Scienza 3, 20126 Milano (Italy); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb{sup −1} per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm{sup 2} and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb{sup −1}, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10{sup 16} neq/cm{sup 2}. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10{sup 16} neq/cm{sup 2} is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  6. Generation of radicals in hard biological tissues under the action of laser radiation

    Science.gov (United States)

    Sviridov, Alexander P.; Bagratashvili, Victor N.; Sobol, Emil N.; Omelchenko, Alexander I.; Lunina, Elena V.; Zhitnev, Yurii N.; Markaryan, Galina L.; Lunin, Valerii V.

    2002-07-01

    The formation of radicals upon UV and IR laser irradiation of some biological tissues and their components was studied by the EPR technique. The radical decay kinetics in body tissue specimens after their irradiation with UV light were described by various models. By the spin trapping technique, it was shown that radicals were not produced during IR laser irradiation of cartilaginous tissue. A change in optical absorption spectra and the dynamics of optical density of cartilaginous tissue, fish scale, and a collagen film under exposure to laser radiation in an air, oxygen, and nitrogen atmosphere was studied.

  7. Cryogenic and radiation hard ASIC design for large format NIR/SWIR detector

    Science.gov (United States)

    Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

    2014-10-01

    An ASIC is developed to control and data quantization for large format NIR/SWIR detector arrays. Both cryogenic and space radiation environment issue are considered during the design. Therefore it can be integrated in the cryogenic chamber, which reduces significantly the vast amount of long wires going in and out the cryogenic chamber, i.e. benefits EMI and noise concerns, as well as the power consumption of cooling system and interfacing circuits. In this paper, we will describe the development of this prototype ASIC for image sensor driving and signal processing as well as the testing in both room and cryogenic temperature.

  8. Radiation hardness evaluation of the commercial 150 nm CMOS process using 60Co source

    International Nuclear Information System (INIS)

    Carna, M; Havranek, M; Hejtmanek, M; Janoska, Z; Marcisovsky, M; Neue, G; Tomasek, L; Vrba, V

    2014-01-01

    We present a study of radiation effects on MOSFET transistors irradiated with a 60 Co source to a total absorbed dose of 1.5 Mrad. The transistor test structures were manufactured using a commercial 150 nm CMOS process and are composed of transistors of different types (NMOS and PMOS), dimensions and insulation from the bulk material by means of deep n-wells. We have observed a degradation of electrical characteristics of both PMOS and NMOS transistors, namely a large increase of the leakage current of the NMOS transistors after irradiation

  9. Hard x-ray monochromator with milli-electron volt bandwidth for high-resolution diffraction studies of diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stoupin, Stanislav; Shvyd' ko, Yuri; Shu Deming; Khachatryan, Ruben; Xiao, Xianghui; DeCarlo, Francesco; Goetze, Kurt; Roberts, Timothy; Roehrig, Christian; Deriy, Alexey [Advanced Photon Source, Argonne National Laboratory, Illinois 60439 (United States)

    2012-02-15

    We report on design and performance of a high-resolution x-ray monochromator with a spectral bandwidth of {Delta}E{sub X}{approx_equal} 1.5 meV, which operates at x-ray energies in the vicinity of the backscattering (Bragg) energy E{sub H} = 13.903 keV of the (008) reflection in diamond. The monochromator is utilized for high-energy-resolution diffraction characterization of diamond crystals as elements of advanced x-ray crystal optics for synchrotrons and x-ray free-electron lasers. The monochromator and the related controls are made portable such that they can be installed and operated at any appropriate synchrotron beamline equipped with a pre-monochromator.

  10. Radiation hardness and precision timing study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

    CERN Document Server

    Curras Rivera, Esteban

    2016-01-01

    The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering about 250 fba-1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 30 layers of silicon detectors totalling 600m^2. The sensors will be realized as pad detectors with cell sizes of between 0.5-1.0 cm^2 and an active thickness between 100 um and 300 um depending on their location in the endcaps the thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fba-1, the electromagnetic calorimetry will sustain integ...

  11. Development of radiation hard microstrip detectors for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Chatterji, Sudeep [GSI, Darmstadt (Germany)

    2010-07-01

    Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

  12. A low power high speed radiation hard serializer for High Energy Physics experiments

    CERN Document Server

    AUTHOR|(CDS)2080243; Marchioro, Alessandro; Ottavi, Marco

    This Ph.D. thesis focuses on the development and the characterization of novel solutions for electronic systems for high-speed data transmission in extremely high radio-active environment (e.g. high energy physics application). The text proposes two alternative full-custom solutions for a fundamental enabling block for a lowpower serial data transmission system, the serializer. This block will find place in a future transceiver conceived for the future upgraded phase of the Large Hadron Collider, or LHC, at CERN. The first solution proposed, called “triple module redundancy”, is based on hardware redundancy, a well-known solution, to obtain protection against the temporary malfunctioning induced by radiation. In the second case a new architecture, called “code protected”, is proposed. This architecture takes advantage of the error correction code present in the data word to obtain radiation robustness on data and some parts of the control logic and to further reduce the power consumption. A test chip ...

  13. Technology development of p-type microstrip detectors with radiation hard p-spray isolation

    International Nuclear Information System (INIS)

    Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

    2006-01-01

    A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

  14. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    International Nuclear Information System (INIS)

    Kelvin G. Lynn; Kelly A. Jones

    2007-01-01

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of ∼ 3 x 10 8 Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10 10 Ohm*cm and with a average μτ product for electrons of ∼ 2 x 10 -4 cm 2 /V with a 1/4 microsecond shaping time with samples ∼2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps and temperature profiles. CG39 ingot

  15. DGR, GGR; molecular dynamical codes for simulating radiation damages in diamond and graphite crystals

    International Nuclear Information System (INIS)

    Taji, Yukichi

    1984-06-01

    Development has been made of molecular dynamical codes DGR and GGR to simulate radiation damages yielded in the diamond and graphite structure crystals, respectively. Though the usual molecular dynamical codes deal only with the central forces as the mutual interactions between atoms, the present codes can take account of noncentral forces to represent the effect of the covalent bonds characteristic of diamond or graphite crystals. It is shown that lattice defects yielded in these crystals are stable by themselves in the present method without any supports of virtual surface forces set on the crystallite surfaces. By this effect the behavior of lattice defects has become possible to be simulated in a more realistic manner. Some examples of the simulation with these codes are shown. (author)

  16. Attenuation of Reactor Gamma Radiation and Fast Neutrons Through Large Single-Crystal Materials

    International Nuclear Information System (INIS)

    Adib, M.

    2009-01-01

    A generalized formula is given which, for neutron energies in the range 10-4< E< 10 eV and gamma rays with average energy 2 MeV , permits calculation of the transmission properties of several single crystal materials important for neutron scattering instrumentation. A computer program Filter was developed which permits the calculation of attenuation of gamma radiation, nuclear capture, thermal diffuse and Bragg-scattering cross-sections as a function of materials constants, temperature and neutron energy. The applicability of the deduced formula along with the code checked from the obtained agreement between the calculated and experimental neutron transmission through various single-crystals A feasibility study for use of Si, Ge, Pb, Bi and sapphire is detailed in terms of optimum crystal thickness, mosaic spread and cutting plane for efficient transmission of thermal reactor neutrons and for rejection of the accompanying fast neutrons and gamma rays.

  17. Excitation of different chromium centres by synchrotron radiation in MgO:Cr single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shablonin, E. [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia); Popov, A.I., E-mail: popov@latnet.lv [Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063 (Latvia); Lushchik, A., E-mail: aleksandr.lushchik@ut.ee [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia); Kotlov, A. [Photon Science at DESY, Notkestrasse 85, 22607 Hamburg (Germany); Dolgov, S. [Institute of Physics, University of Tartu, Ravila Str. 14c, 50411 Tartu (Estonia)

    2015-11-15

    The excitation spectra for the emissions of chromium-containing centres have been measured at 10 K using synchrotron radiation of 4–32 eV in MgO single crystals with different content of Cr{sup 3+} (5–850 ppm) and Ca{sup 2+} impurity ions. Both virgin crystals and the samples preliminarily irradiated with x-rays at 295 K have been studied. The role of complex chromium centres containing two Cr{sup 3+} and a cation vacancy (sometimes nearby a Ca{sup 2+} ion) on the luminescence processes and the transformation/creation of structural defects has been analysed. Such anharmonic complex centres could serve as the seeds for the creation of 3D defects that facilitate the cracking and brittle destruction of MgO crystals under their irradiation with ∼GeV heavy ions providing extremely high excitation density within cylindrical ion tracks.

  18. Nuclear Radiation Tolerance of Single Crystal Aluminum Nitride Ultrasonic Transducer

    Science.gov (United States)

    Reinhard, Brian; Tittmann, Bernhard R.; Suprock, Andrew

    Ultrasonic technologies offer the potential for high accuracy and resolution in-pile measurement of a range of parameters, including geometry changes, temperature, crack initiation and growth, gas pressure and composition, and microstructural changes. Many Department of Energy-Office of Nuclear Energy (DOE-NE) programs are exploring the use of ultrasonic technologies to provide enhanced sensors for in-pile instrumentation during irradiation testing. For example, the ability of small diameter ultrasonic thermometers (UTs) to provide a temperature profile in candidate metallic and oxide fuel would provide much needed data for validating new fuel performance models, (Rempe et al., 2011; Kazys et al., 2005). These efforts are limited by the lack of identified ultrasonic transducer materials capable of long term performance under irradiation test conditions. To address this need, the Pennsylvania State University (PSU) was awarded an Advanced Test Reactor National Scientific User Facility (ATR NSUF) project to evaluate the performance of promising magnetostrictive and piezoelectric transducers in the Massachusetts Institute of Technology Research Reactor (MITR) up to a fast fluence of at least 1021 n/cm2. The irradiation is also supported by a multi-National Laboratory collaboration funded by the Nuclear Energy Enabling Technologies Advanced Sensors and Instrumentation (NEET ASI) program. The results from this irradiation, which started in February 2014, offer the potential to enable the development of novel radiation tolerant ultrasonic sensors for use in Material Testing Reactors (MTRs). As such, this test is an instrumented lead test and real-time transducer performance data is collected along with temperature and neutron and gamma flux data. Hence, results from this irradiation offer the potential to bridge the gap between proven out-of-pile ultrasonic techniques and in-pile deployment of ultrasonic sensors by acquiring the data necessary to demonstrate the

  19. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    Science.gov (United States)

    Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  20. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    International Nuclear Information System (INIS)

    Riegel, C.; Backhaus, M.; Hoorne, J.W. Van; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 10 15 n/cm 2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  1. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  2. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    International Nuclear Information System (INIS)

    Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  3. Ionization processes in the Fe 27 region of hot iron plasma in the field of hard gamma radiation

    International Nuclear Information System (INIS)

    Illarionov, A.F.

    1989-01-01

    A highly ionized hot plasma of an iron 26 56 Fe-type heavy element in the field of hard ionizing gamma-ray radiation is considered. The processes of ionization and recombination are discussed for a plasma consisting of the fully ionized Fe 27 and the hydrogen-like Fe 26 ions of iron in the case of large optical depth of the plasma with respect to the photoionization by gamma-ray quanta. The self-ionization process of a hot plasma with the temperature kT ≅ I (I being the ionization potential), due to the production of the own ionizing gamma-ray quanta, by the free-free (ff) and recombination (fb) radiation mechanisms, is investigated. It is noted that in the stationary situation the process of self-ionization of a hot plasma imposes the restriction upon the plasma temperature, kT<1.5 I. It is shown that the ionization of heavy-ion plasma by the impact of thermal electrons is dominating over the processes of ff- and fb-selfionization of plasma only by the large concentration of hydrogen-like iron at the periphery of the region of fully ionized iron Fe 27

  4. Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

  5. Effects of alpha radiation on hardness and toughness of the borosilicate glass applied to radioactive wastes immobilization

    International Nuclear Information System (INIS)

    Prado, Miguel Oscar; Bernasconi, Norma B. Messi de; Bevilacqua, Arturo Miguel; Arribere, Maria Angelica; Heredia, Arturo D.; Sanfilippo, Miguel

    1999-01-01

    Borosilicate german glass SG7 samples, obtained by frit sintering, were irradiated with different fluences of thermal neutrons in the nucleus of a nuclear reactor. The nuclear reaction 10 B(n,α) 7 Li, where the 10 B isotope is one of the natural glass components, was used to generate alpha particles throughout the glass volume. The maximum alpha disintegration per unit volume achieved was equivalent to that accumulated in a borosilicate glass with nuclear wastes after 3.8 million years. Through Vickers indentations values for microhardness, stress for 50% fracture probability (Weibull statistics) and estimation of the toughness were obtained as a function of alpha radiation dose. Two counterbalanced effects were found: that due to the disorder created by the alpha particles in the glass and that due to the annealing during irradiation (temperature below 240 deg C). Considering the alpha radiation effect, glasses tend decrease Vickers hardness, and to increase thr 50% fracture probability stress with the dose increase. (author)

  6. Radiation-induced color centers in La-doped PbWO sub 4 crystals

    CERN Document Server

    Deng, Q; Zhu, R Y

    1999-01-01

    This report presents the result of a study on radiation-induced color center densities in La-doped lead tungstate (PbWO sub 4) crystals. The creation and annihilation constants of radiation-induced color centers were determined by using transmittance data measured for a PbWO sub 4 sample before and during sup 6 sup 0 Co gamma-ray irradiation at a dose rate of 15 rad/h. Following a model of color center kinetics, these constants were used to calculate color center densities under irradiations at 100 rad/h. The result was found to be in good agreement with experimental data, indicating that the behaviour of PbWO sub 4 crystals under irradiation can be predicted according to this model.

  7. Radiation chemistry of plastic crystals. Annual progress report, November 1, 1976--October 31, 1977

    International Nuclear Information System (INIS)

    Klingen, T.J.

    1977-01-01

    The overall purpose of this investigation is the understanding of the role that mesomorphism plays in the radiation chemistry of plastic crystals. In approaching this problem, the first step is to obtain data on the basic radiation chemistry of the most ordered solid state--the crystalline state. Thus, the results reported here are concerned with determination of the radiolysis of three plastic crystals in their highest ordered state. In addition to these studies, investigation of the optical properties and the positron life time properties of these materials in their plastic crystalline state was undertaken. The primary purpose of these studies during the current reporting period was the determination of the feasibility of these techniques to provide useful information to the overall project goal

  8. Effect of reactor neutron radiation and temperature on the structure of InP single crystals

    International Nuclear Information System (INIS)

    Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

    2006-01-01

    The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

  9. Angular distributions of relativistic electrons under channeling in half-wavelength crystal and corresponding radiation

    International Nuclear Information System (INIS)

    Takabayashi, Y.; Bagrov, V.G.; Bogdanov, O.V.; Pivovarov, Yu.L.; Tukhfatullin, T.A.

    2015-01-01

    New experiments on channeling of 255 MeV electrons in a half-wavelength crystals (HWC) were performed at SAGA Light Source facilities. The simulations of trajectories for (2 2 0) and (1 1 1) planar channeling in Si were performed using the computer code BCM-1.0. Comparison of experimental and theoretical results shows a good agreement. The results of calculations of spectral distribution of radiation in forward direction (θ = 0°) from 255 MeV electrons at (2 2 0) channeling in HWC silicon are presented. Qualitative comparison with radiation spectrum from an electron moving in an arc is performed

  10. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

    International Nuclear Information System (INIS)

    Oliveira, Icimone Braga de

    2006-01-01

    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  11. Contribution to knowledge of radiation damage in KCl crystals doped with Sr

    International Nuclear Information System (INIS)

    Sordi, G.-M.A.A.

    1974-11-01

    The radiation damages in KCl crystals doped with Sr ++ using thermo-ionic technique (ITC) and optical absorption measurements were studied. The variation of the entropy for the dipole jump starting from results reported by several authors was calculated. The irradiation effects with three different exposures were analysed: irradiation with gamma rays; irradiation with fast neutrons added to gamma irradiation; and irradiation with thermal neutrons together with fast neutrons and gamma rays. (Author) [pt

  12. Decay dynamics of radiatively coupled quantum dots in photonic crystal slabs

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Mørk, Jesper; Lodahl, Peter

    2011-01-01

    We theoretically investigate the influence of radiative coupling on light emission in a photonic crystal slab structure. The calculation method is based on a formalism that combines the photon Green's tensor with a self-consistent Dyson equation approach and is applicable to a wide range of probl......’s tensor and show how interference between different light scattering pathways is responsible for this nontrivial detector response...

  13. Radiation hardness tests with a demonstrator preamplifier circuit manufactured in silicon on sapphire (SOS) VLSI technology

    International Nuclear Information System (INIS)

    Bingefors, N.; Ekeloef, T.; Eriksson, C.; Paulsson, M.; Moerk, G.; Sjoelund, A.

    1992-01-01

    Samples of the preamplifier circuit, as well as of separate n and p channel transistors of the type contained in the circuit, were irradiated with gammas from a 60 Co source up to an integrated dose of 3 Mrad (30 kGy). The VLSI manufacturing technology used is the SOS4 process of ABB Hafo. A first analysis of the tests shows that the performance of the amplifier remains practically unaffected by the radiation for total doses up to 1 Mrad. At higher doses up to 3 Mrad the circuit amplification factor decreases by a factor between 4 and 5 whereas the output noise level remains unchanged. It is argued that it may be possible to reduce the decrease in amplification factor in future by optimizing the amplifier circuit design further. (orig.)

  14. LHCb: The Performance and Radiation Hardness of the Outer Tracker Detector for LHCb

    CERN Multimedia

    Färber, C

    2012-01-01

    The LHC bexperiment is designed to study B-decays at the LHC. It is crucial to accurately and efficiently detect the charged decay particles in the high-density particle environment of the LHC. For this, the Outer Tracker (OT) has been constructed, consisting of 53,760 straw tubes, covering in total an area of 360 m2 of double layers. At the time of the conference, the detector will have operated under nominal LHC conditions for a period of about 2 years, corresponding to an integrated luminosity of approximately 2.5 fb$^{-1}$ . The performance of the detector will be discussed in terms of high voltage stability, noise rate, single hit efficiency and resolution. Finally, first results on the radiation tolerance of this sensitive gas detector will be shown, after having received a total dose corresponding to about 100 mC/cm in the hottest region.

  15. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    International Nuclear Information System (INIS)

    Moll, M.; Fretwurst, E.; Lindstroem, G.

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2x10 14 to 9x10 17 cm -3 have been irradiated with fast neutrons up to a fluence of 2x10 15 cm -2 . Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10% of the initial doping concentration for [O i ]=9x10 17 cm -3 , while for normal detector grade material with [O i ] below 5x10 16 cm -3 that value is 60-90%. Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentration with an averaged introduction rate of (1.49±0.03)x10 -2 cm -1 . Only one material was found exhibiting a significantly smaller value of about 0.6x10 -2 cm -1 and thus indicating the possibility to suppress the radiation-induced acceptor creation by material modification. Finally, we show that the experimental findings disagree in several important aspects with predictions made by microscopic defect kinetics models, leaving the physical background of some of the measured data as an open question

  16. Custom synthesized diamond crystals as state of the art radiation detectors

    International Nuclear Information System (INIS)

    Keddy, R.J.; Nam, T.L.; Fallon, P.J.

    1990-01-01

    The fact that as a radiation detector, diamond is a stable, non-toxic and tissue equivalent (Z=6) material, makes it an ideal candidate for in vivo radiation dosimetry or the dosimetry of general radiation fields in environmental monitoring. Natural diamond crystals have the disadvantage, however, that no two crystals can be guaranteed to have the same response characteristics. This disadvantage can be overcome by synthesizing the crystals under controlled conditions and by using very selective chemistry. Such synthetic diamonds can be used as thermoluminescence dosimeters (TLDs) where they exhibit characteristics comparable to presently available commercial TLDs or they can be used as ionization chambers to produce either ionization currents or pulses where the small physical size of the diamond (1 mm 3 ) and possibilities of digital circuitry makes miniaturization an extremely attractive possibility. It has also been found that they can perform as scintillation detectors. This contribution describes aspects of the performance characteristics of such diamonds in all three modes. 24 refs., 14 figs

  17. Photonic crystal and photonic quasicrystal patterned in PDMS surfaces and their effect on LED radiation properties

    Energy Technology Data Exchange (ETDEWEB)

    Suslik, Lubos [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Pudis, Dusan, E-mail: pudis@fyzika.uniza.sk [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Goraus, Matej [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Nolte, Rainer [Fakultät für Maschinenbau FG Lichttechnik Ilmenau University of Technology, Ilmenau (Germany); Kovac, Jaroslav [Inst. of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava (Slovakia); Durisova, Jana; Gaso, Peter [Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitna 1, 010 26, Zilina (Slovakia); Hronec, Pavol [Inst. of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava (Slovakia); Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)

    2017-02-15

    Graphical abstract: Photonic quasicrystal patterned in the surface of polydimethylsiloxane membrane (left) and radiation pattern of light emitting diode with patterned membrane applied in the surface (right). - Highlights: • We presented fabrication technique of PDMS membranes with patterned surface by photonic crystal (PhC) and photonic quasi-crystal (PQC). • Presented technique is effective for preparation PhC and PQC PDMS membranes easily implementing in the LED chip. • From the goniophotometer measurements, the membranes document effective angular emission due to the diffraction on patterned surfaces. • 12 fold symmetry PQC structure shows homogeneous radiation pattern, while the 2 fold symmetry of square PhC shows evident diffraction lobes. - Abstract: We present results of fabrication and implementation of thin polydimethylsiloxane (PDMS) membranes with patterned surface for the light emitting diode (LED). PDMS membranes were patterned by using the interference lithography in combination with embossing technique. Two-dimensional photonic crystal and photonic quasicrystal structures with different period were patterned in the surface of thin PDMS membranes with depth up to 550 nm. Patterned PDMS membranes placed on the LED chip effectively diffracted light and increased angular emission of LED radiation pattern. We presented effective technique for fabrication of patterned PDMS membranes, which could modify the emission properties of optoelectronic devices and can be applied directly on surface LEDs and small optical devices.

  18. Characteristics and performance of thin LaBr3(Ce) crystal for hard X-ray astronomy

    Science.gov (United States)

    Manchanda, R. K.

    2011-01-01

    We have developed a new detector using thin lanthanum bromide crystal (32 × 3 mm) for use in X-ray astronomy. The instrument was launched in high altitude balloon flight on two different occasions, December 21, 2007, which reached a ceiling altitude of 4.3 mbs and April 25, 2008 reaching a ceiling altitude 2.8 mbs. The observed background counting rate at the ceiling altitude of 4 mbs was ˜4 × 10-3 ct cm-2 s-1 keV-1 sr-1. This paper describes the details of the experiment, the detector characteristics, and the background behaviour at the ceiling altitude.

  19. A Radiation Hard Multi-Channel Digitizer ASIC for Operation in the Harsh Jovian Environment

    Science.gov (United States)

    Aslam, Shahid; Aslam, S.; Akturk, A.; Quilligan, G.

    2011-01-01

    ultimately impact the surface of Europa after the mission is completed. The current JEO mission concept includes a range of instruments on the payload, to monitor dynamic phenomena (such as Io's volcanoes and Jupiters atmosphere), map the Jovian magnetosphere and its interactions with the Galilean satellites, and characterize water oceans beneath the ice shells of Europa and Ganymede. The payload includes a low mass (3.7 Kg) and low power (ASIC that resides very close to the thermopile linear array outputs. Both the thermopile array and the MCD ASIC will need to show full functionality within the harsh Jovian radiation environment, operating at cryogenic temperatures, typically 150 K to 170 K. In the following, a radiation mitigation strategy together with a low risk Radiation-Hardened-By-Design (RHBD) methodology using commercial foundry processes is given for the design and manufacture of a MCD ASIC that will meet this challenge.

  20. Glass transition in thaumatin crystals revealed through temperature-dependent radiation-sensitivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    Warkentin, Matthew, E-mail: maw64@cornell.edu; Thorne, Robert E. [Physics Department, Cornell University, Ithaca, New York (United States)

    2010-10-01

    Radiation damage to protein crystals exhibits two regimes of temperature-activated behavior between T = 300 and 100 K, with a crossover at the protein glass transition near 200 K. These results have implications for mechanistic studies of proteins and for structure determination when cooling to T = 100 K creates excessive disorder. The temperature-dependence of radiation damage to thaumatin crystals between T = 300 and 100 K is reported. The amount of damage for a given dose decreases sharply as the temperature decreases from 300 to 220 K and then decreases more gradually on further cooling below the protein-solvent glass transition. Two regimes of temperature-activated behavior were observed. At temperatures above ∼200 K the activation energy of 18.0 kJ mol{sup −1} indicates that radiation damage is dominated by diffusive motions in the protein and solvent. At temperatures below ∼200 K the activation energy is only 1.00 kJ mol{sup −1}, which is of the order of the thermal energy. Similar activation energies describe the temperature-dependence of radiation damage to a variety of solvent-free small-molecule organic crystals over the temperature range T = 300–80 K. It is suggested that radiation damage in this regime is vibrationally assisted and that the freezing-out of amino-acid scale vibrations contributes to the very weak temperature-dependence of radiation damage below ∼80 K. Analysis using the radiation-damage model of Blake and Phillips [Blake & Phillips (1962 ▶), Biological Effects of Ionizing Radiation at the Molecular Level, pp. 183–191] indicates that large-scale conformational and molecular motions are frozen out below T = 200 K but become increasingly prevalent and make an increasing contribution to damage at higher temperatures. Possible alternative mechanisms for radiation damage involving the formation of hydrogen-gas bubbles are discussed and discounted. These results have implications for mechanistic studies of proteins and for

  1. Influence of the reactor irradiation on the radiation-optical features of the PbWO4:La scintillation crystals

    International Nuclear Information System (INIS)

    Ashurov, M.Kh.; Ismoilov, Sh.Kh.; Khatamov, K.; Gasanov, Eh.M.; Rustamov, I.R.

    2001-01-01

    Within an International LHC project the lead tungstates (PbWO 4 ) scintillation crystals radiation stability activated by La ions was carried out. In the 400-700 nm length range the transmission spectra were measured on the different parts of the standard PbWO 4 :La crystals. The spectra were measured before and after irradiation by both fast neutrons and γ-radiation. On the base of obtained data the contribution of γ-quanta and neutrons in the radiation-induced losses value of optical radiation in the active media of the electromagnetic colorimeter was estimated

  2. Observation of multiphase magnetic state of hematite crystal during Morin transition by the method of section topography of synchrotron radiation

    International Nuclear Information System (INIS)

    Shchetinkin, S.A.; Kvardakov, V.V.; Viler, Eh.; Barushel', Zh.; Shlenker, M.

    2005-01-01

    The boundaries between weak ferromagnetic and antiferromagnetic phases in hematite crystals during Morin transition are detected by the section topography method by synchrotron radiation. It is shown that these boundaries are parallel to (111) surface hence magnetic phases during Morin transition separate the crystal by layers. Change of layer depth in dependence on temperature and magnetic field, and interaction interphase boundaries with crystal defects are observed [ru

  3. Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

    International Nuclear Information System (INIS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Pezzullo, G.; El Nasr-Storey, S. Seif; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-01-01

    Particle detectors for future experiments at the HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed ''building-block'' modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented

  4. Radiation hard 3D diamond sensors for vertex detectors at HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00336619; Quadt, Arnulf; Grosse-Knetter, Jörn; Weingarten, Jens

    Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

  5. The GBTIA, a 5 Gbit/s Radiation-Hard Optical Receiver for the SLHC Upgrades

    CERN Document Server

    Menouni, M; Moreira, P

    2009-01-01

    The GigaBit Transceiver (GBT) is a high-speed optical transmission system currently under development for HEP applications. This system will implement bi-directional optical links to be used in the radiation environment of the Super LHC. The GigaBit Transimpedance Amplifier (GBTIA) is the front-end optical receiver of the GBT chip set. This paper presents the GBTIA, a 5 Gbit/s, fully differential, and highly sensitive optical receiver designed and implemented in a commercial 0.13 μm CMOS process. When connected to a PIN-diode, the GBTIA displays a sensitivity better than −19 dBm for a BER of 10−12. The differential output across an external 50 Ω load remains constant at 400 mVpp even for signals near the sensitivity limit. The chip achieves an overall transimpedance gain of 20 kΩ with a measured bandwidth of 4 GHz. The total power consumption of the chip is less than 120 mW and the chip die size is 0.75 mm x 1.25 mm. Irradiation testing of the chip shows no performance degradation after a dose rate of ...

  6. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    CERN Document Server

    Moll, Michael; Lindström, G

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

  7. Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

    International Nuclear Information System (INIS)

    Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

    2012-01-01

    The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

  8. Development and application of the analyzer-based imaging technique with hard synchrotron radiation

    International Nuclear Information System (INIS)

    Coan, P.

    2006-07-01

    The objective of this thesis is twofold: from one side the application of the analyser-based X-ray phase contrast imaging to study cartilage, bone and bone implants using ESRF synchrotron radiation sources and on the other to contribute to the development of the phase contrast techniques from the theoretical and experimental point of view. Several human samples have been studied in vitro using the analyser based imaging (ABI) technique. Examination included projection and computed tomography imaging and 3-dimensional volume rendering of hip, big toe and ankle articular joints. X-ray ABI images have been critically compared with those obtained with conventional techniques, including radiography, computed tomography, ultrasound, magnetic resonance and histology, the latter taken as gold standard. Results show that only ABI imaging was able to either visualize or correctly estimate the early pathological status of the cartilage. The status of the bone ingrowth in sheep implants have also been examined in vitro: ABI images permitted to correctly distinguish between good and incomplete bone healing. Pioneering in-vivo ABI on guinea pigs were also successfully performed, confirming the possible use of the technique to follow up the progression of joint diseases, the bone/metal ingrowth and the efficacy of drugs treatments. As part of the development of the phase contrast techniques, two objectives have been reached. First, it has been experimentally demonstrated for the first time that the ABI and the propagation based imaging (PBI) can be combined to create images with original features (hybrid imaging, HI). Secondly, it has been proposed and experimentally tested a new simplified set-up capable to produce images with properties similar to those obtained with the ABI technique or HI. Finally, both the ABI and the HI have been theoretically studied with an innovative, wave-based simulation program, which was able to correctly reproduce experimental results. (author)

  9. Hard X-ray MCD in GdNi/sub 5/ and TbNi/sub 5/ single crystals

    CERN Document Server

    Galera, R M

    1999-01-01

    XMCD experiments have been performed at the R L/sub 2,3/ and Ni K- edges on magnetically saturated single crystals of GdNi/sub 5/ and Tb Ni/sub 5/ ferromagnetic compounds. The spectra present huge and well structured dichroic $9 signals at both the R L/sub 2,3/ and the Ni K- edges. Structures from the quadrupolar (2p to 4f) transitions are clearly observed at the R L/sub 2,3/-edges. Though Ni is not magnetic, large intensities, up to 0.4, are measured at the $9 Ni K- edge. The Ni K-edge XMCD shows a three-peak structure which intensities dependent on the rare earth. (7 refs).

  10. Radiative cooling of solar absorbers using a visibly transparent photonic crystal thermal blackbody

    Science.gov (United States)

    Zhu, Linxiao; Raman, Aaswath P.; Fan, Shanhui

    2015-01-01

    A solar absorber, under the sun, is heated up by sunlight. In many applications, including solar cells and outdoor structures, the absorption of sunlight is intrinsic for either operational or aesthetic considerations, but the resulting heating is undesirable. Because a solar absorber by necessity faces the sky, it also naturally has radiative access to the coldness of the universe. Therefore, in these applications it would be very attractive to directly use the sky as a heat sink while preserving solar absorption properties. Here we experimentally demonstrate a visibly transparent thermal blackbody, based on a silica photonic crystal. When placed on a silicon absorber under sunlight, such a blackbody preserves or even slightly enhances sunlight absorption, but reduces the temperature of the underlying silicon absorber by as much as 13 °C due to radiative cooling. Our work shows that the concept of radiative cooling can be used in combination with the utilization of sunlight, enabling new technological capabilities. PMID:26392542

  11. Conversion of broadband IR radiation and structural disorder in lithium niobate single crystals with low photorefractive effect

    Science.gov (United States)

    Litvinova, Man Nen; Syuy, Alexander V.; Krishtop, Victor V.; Pogodina, Veronika A.; Ponomarchuk, Yulia V.; Sidorov, Nikolay V.; Gabain, Aleksei A.; Palatnikov, Mikhail N.; Litvinov, Vladimir A.

    2016-11-01

    The conversion of broadband IR radiation when the noncritical phase matching condition is fulfilled in lithium niobate (LiNbO3) single crystals with stoichiometric (R = Li/Nb = 1) and congruent (R = 0.946) compositions, as well as in congruent single crystals doped with zinc has been investigated. It is shown that the spectrum parameters of converted radiation, such as the conversion efficiency, spectral width and position of maximum, depend on the ordering degree of structural units of the cation sublattice along the polar axis of crystal.

  12. crystal

    Science.gov (United States)

    Yu, Yi; Huang, Yisheng; Zhang, Lizhen; Lin, Zhoubin; Sun, Shijia; Wang, Guofu

    2014-07-01

    A Nd3+:Na2La4(WO4)7 crystal with dimensions of ϕ 17 × 30 mm3 was grown by the Czochralski method. The thermal expansion coefficients of Nd3+:Na2La4(WO4)7 crystal are 1.32 × 10-5 K-1 along c-axis and 1.23 × 10-5 K-1 along a-axis, respectively. The spectroscopic characteristics of Nd3+:Na2La4(WO4)7 crystal were investigated. The Judd-Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10-20 cm2 with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10-20 cm2 with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10-20 cm2 for σ-polarization and 2.67 × 10-20 cm2 for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd3+:Na2La4(WO4)7 crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd3+:Na2La4(WO4)7 crystal as a promising laser crystal fit for laser diode pumping.

  13. Evaluation of radiation tolerance of FETs used for Astro-E2 hard X-ray detector (HXD-II)

    International Nuclear Information System (INIS)

    Itoh, Takeshi; Niko, Hisako; Kokubun, Motohide; Makishima, Kazuo; Kawaharada, Madoka; Takahashi, Isao; Miyasaka, Hiromasa

    2005-01-01

    We evaluated the radiation tolerance of three types of metal-can MOS Field Effect Transistors (FETs). They are candidates for flight electronics of the Hard X-ray Detector (HXD-II) experiment which is onboard the cosmic X-ray satellite Astro-E2 scheduled for launch in 2005. We irradiated FETs with a Co60γ-ray source under several different experimental conditions, and measured changes in their I-V characteristic curves. After a 10krad irradiation during which the gate voltage is set at 0V, all types showed a decrease in the switching voltage by ∼0.2-0.4V. In addition, the gate conductance increased under some irradiation conditions. These experimental results may be explained in terms of trapped charges and boundary levels in the oxide layer beneath the gate electrode. We have confirmed that at least two types of FETs can be used in our satellite-borne experiment, one as relay-driving FETs and the other in TTL-ECL conversion circuits

  14. A novel epitaxially grown LSO-based thin-film scintillator for micro-imaging using hard synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Douissard, P.A.; Martin, T.; Chevalier, V.; Rack, A. [European Synchrotron Radiat Facil, F-38043 Grenoble, (France); Cecilia, A.; Baumbach, T.; Rack, A. [Karlsruhe Inst Technol ANKA, D-76021 Karlsruhe, (Germany); Couchaud, M. [CEA LETI, F-38054 Grenoble, (France); Dupre, K. [FEE GmbH, D-55743 Idar Oberstein, (Germany); Kuhbacher, M. [Helmholtz Zentrum Berlin Mat and Energie, D-14109 Berlin, (Germany)

    2010-07-01

    The efficiency of high-resolution pixel detectors for hard X-rays is nowadays one of the major criteria which drives the feasibility of imaging experiments and in general the performance of an experimental station for synchrotron-based microtomography and radiography. Here the luminescent screen used for the indirect detection is focused on in order to increase the detective quantum efficiency a novel scintillator based on doped Lu{sub 2}SiO{sub 5} (LSO), epitaxially grown as thin film via the liquid phase epitaxy technique. It is shown that, by using adapted growth and doping parameters as well as a dedicated substrate, the scintillation behaviour of a LSO-based thin crystal together with the high stopping power of the material allows for high-performance indirect X-ray detection. In detail, the conversion efficiency, the radioluminescence spectra, the optical absorption spectra under UV/visible-light and the afterglow are investigated. A set-up to study the effect of the thin-film scintillator's temperature on its conversion efficiency is described as well it delivers knowledge which is important when working with higher photon flux densities and the corresponding high heat load on the material. Additionally, X-ray imaging systems based on different diffraction-limited visible-light optics and CCD cameras using among others LSO-based thin film are compared. Finally, the performance of the LSO thin film is illustrated by imaging a honey bee leg, demonstrating the value of efficient high-resolution computed tomography for life sciences. (authors)

  15. Hardness properties and microscopic investigation of crack- crystal interaction in SiO(2)-MgO-Al(2)O(3)-K(2)O-B(2)O(3)-F glass ceramic system.

    Science.gov (United States)

    Roy, Shibayan; Basu, Bikramjit

    2010-01-01

    In view of the potential engineering applications requiring machinability and wear resistance, the present work focuses to evaluate hardness property and to understand the damage behavior of some selected glass-ceramics having different crystal morphologies with SiO(2)-MgO-Al(2)O(3)-K(2)O-B(2)O(3)-F composition, using static micro-indentation tests as well as dynamic scratch tests, respectively. Vickers hardness of up to 5.5 GPa has been measured in glass-ceramics containing plate like mica crystals. Scratch tests at a high load of 50 Nin artificial saliva were carried out in order to simulate the crack-microstructure interaction during real-time abrasion wear and machining operation. The experimental observations indicate that the novel "spherulitic-dendritic shaped "crystals, similar to the plate like crystals, have the potential to hinder the scratching induced crack propagation. In particular, such potential of the 'spherulitic-dendritic' crystals become more effective due to the larger interfacial area with the glass matrix as well as the dendritic structure of each mica plate, which helps in crack deflection and crack blunting, to a larger extent.While modest damage tolerant behavior is observed in case of 'spherulitic-dendritic' crystal containing material, severe brittle fracture of plate like crystals were noted, when both were scratched at 50 N load.

  16. Characterization of barite and crystal glass as attenuators in X-ray and gamma radiation shieldings

    International Nuclear Information System (INIS)

    Almeida Junior, Airton Tavares de

    2005-03-01

    Aiming to determine the barium sulphate (BaSO 4 ) ore and crystal glass attenuation features, both utilized as shieldings against ionizing X and gamma radiations in radiographic installations, a study of attenuation using barite plaster and barite concrete was carried out, which are used, respectively, on wall coverings and in block buildings. The crystal glass is utilized in screens and in windows. To do so, ten plates of barite plaster and three of barite concrete with 900 cm 2 and with an average thickness ranging from 1 to 5 cm, and three plates of crystal glass with 323 cm 2 and with thicknesses of 1, 2 and 4 cm were analyzed. The samples were irradiated with X-rays with potentials of 60, 80, 110 and 150 kilovolts, and also with 60 Co gamma rays. Curves of attenuation were obtained for barite plaster and barite concrete (mGy/mA.min) and (mGy/h), both at 1 meter, as a function of thickness and curve of transmission through barite plaster and barite concrete as a function of the thickness. The equivalent thicknesses of half and tenth value layers for barite plaster, barite concrete and crystal glass for all X-Ray energies were also determined. (author)

  17. Scintillation properties of semiconducting {sup 6}LiInSe{sub 2} crystals to ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Wiggins, Brenden [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); Groza, Michael; Tupitsyn, Eugene [Fisk University, Nashville, TN (United States); Lukosi, Eric [University of Tennessee, Knoxville, TN (United States); Stassun, Keivan; Burger, Arnold [Vanderbilt University, Nashville, TN (United States); Fisk University, Nashville, TN (United States); Stowe, Ashley [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); University of Tennessee, Knoxville, TN (United States)

    2015-11-21

    {sup 6}LiInSe{sub 2} has gained attention recently as a semiconducting thermal neutron detector. As presented herein, the chalcogenide compound semiconductor also detects incident neutrons via scintillation, making {sup 6}LiInSe{sub 2} the only lithium containing semiconductor to respond to neutrons via both detection mechanisms. Both yellow and red crystals, which appear in the literature, were investigated. Only the yellow crystal responded favorably to ionizing radiation, similar to the semiconducting operation utilizing electrodes. The obtained light yield for yellow crystals is 4400 photons/MeV, referenced to Bi{sub 4}Ge{sub 3}O{sub 12} (BGO).The estimated thermal neutron light yield was 21,000 photons/thermal neutron. The two measured decay time components were found to be 31±1 ns (49%) and 143±9 ns (51%).This crystal provides efficient, robust detection of neutrons via scintillation with respectable light yield and rapid response, enabling its use for a broad array of neutron detection applications.

  18. X-ray-excited optical luminescence of protein crystals: a new tool for studying radiation damage during diffraction data collection.

    Science.gov (United States)

    Owen, Robin L; Yorke, Briony A; Pearson, Arwen R

    2012-05-01

    During X-ray irradiation protein crystals radiate energy in the form of small amounts of visible light. This is known as X-ray-excited optical luminescence (XEOL). The XEOL of several proteins and their constituent amino acids has been characterized using the microspectrophotometers at the Swiss Light Source and Diamond Light Source. XEOL arises primarily from aromatic amino acids, but the effects of local environment and quenching within a crystal mean that the XEOL spectrum of a crystal is not the simple sum of the spectra of its constituent parts. Upon repeated exposure to X-rays XEOL spectra decay non-uniformly, suggesting that XEOL is sensitive to site-specific radiation damage. However, rates of XEOL decay were found not to correlate to decays in diffracting power, making XEOL of limited use as a metric for radiation damage to protein crystals. © 2012 International Union of Crystallography

  19. New channeling effects in the radiative emission of 150 GeV electrons in a thin germanium crystal

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.; Sun, C.R.

    1986-01-01

    The orientation dependence of the radiative emission of 150 GeV electrons and positrons incident at small angles with respect to the axial direction of a thin (0.185 mm) Ge crystal has been observed. The processes are well understood, except for channeled electrons, which radiate unexpected high energy photons. (orig.)

  20. Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro

    2018-06-01

    On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.

  1. Radiation damage in solid 5-halouracils. Electron spin resonance of single crystals of 5-bromouracil

    International Nuclear Information System (INIS)

    Oloff, H.; Huettermann, J.; Symons, M.C.R.

    1978-01-01

    Knowledge gained about halogen hyperfine interaction in radiation-induced free radicals formed at 300 K in a variety of 5-halouracil bases, together with the availability of crystal structure of 5-bromouracil aids in determination of the dominant radical structure. Details of its spectral parameters are presented, ESR spectra of single crystals of 5-bromouracil irradiated at 300K induce the presence of free radicals which indicate the loss of hydrogen from N 1 , confirming structure I as the dominant radical. The powder spectrum of 5-bromouracil measured after irradiation at 300K shows x features of radical I, but they appear superimposed by lines of another radical also involving bromine hyperfine interaction. These lines most probably belong to the hydrogen-addition radical II

  2. Temperature dependence of radiation colloidal centers production and annealing in alkali halide crystals

    International Nuclear Information System (INIS)

    Kristapson, J.Z.; Ozerskii, V.J.

    1981-01-01

    The investigation results on temperature dependences of production and annealing of radiation colloidal color centers have been reviewed. In order to produce such centers in NaCl, KCl and KBr crystals the doses of 10 2 -10 4 Mrad as well as irradiation temperatures of 300-600 K and post-irradiation heating of up to 800 K were applied. It has been demonstrated that to produce X-centers, it is necessary to have optimal temperature and initial critical dose during both irradiation and post-irradiation heating of crystals. It has been also found that during annealing hole centers produced are different with regard to thermal stability. The possible recombination mechanisms of hole and electron products of radiolysis during post-irradiation heating has been analyzed [ru

  3. Investigation of singularities of integral intensity of the relativistic particle bremsstrahlung radiation in a diamond crystal

    International Nuclear Information System (INIS)

    Avakyan, R.O.; Armaganyan, A.A.; Arutyunyan, L.G.; Iskandaryan, A.G.; Taroyan, S.P.

    1981-01-01

    The results are given of the theoretical processing of experimental data on the investigation of orientational dependences of integral intensity of coherent bremsstrahlung radiation (CBR) of superfast electrons in a diamond crystal. It is shown that in the case of ''point effect'' right up to the electrons incident angle, which is 0.1 mrad with respect to the crystallographic plane, the CBR theory gives a good description of experimental data. In the case of ''row effect'', in order to account for the divergence between the theory and experiment at small incident angles of electrons with respect to the crystallographic axis, it is assumed that the multiple scattering angle has an orientational dependence. By fitting the theoretical curve to experimental points the dependences are obtained of the multiple scattering angle change on the crystal orientation with respect to the electron beam

  4. On beam shaping of the field radiated by a line source coupled to finite or infinite photonic crystals.

    Science.gov (United States)

    Ceccuzzi, Silvio; Jandieri, Vakhtang; Baccarelli, Paolo; Ponti, Cristina; Schettini, Giuseppe

    2016-04-01

    Comparison of the beam-shaping effect of a field radiated by a line source, when an ideal infinite structure constituted by two photonic crystals and an actual finite one are considered, has been carried out by means of two different methods. The lattice sums technique combined with the generalized reflection matrix method is used to rigorously investigate the radiation from the infinite photonic crystals, whereas radiation from crystals composed of a finite number of rods along the layers is analyzed using the cylindrical-wave approach. A directive radiation is observed with the line source embedded in the structure. With an increased separation distance between the crystals, a significant edge diffraction appears that provides the main radiation mechanism in the finite layout. Suitable absorbers are implemented to reduce the above-mentioned diffraction and the reflections at the boundaries, thus obtaining good agreement between radiation patterns of a localized line source coupled to finite and infinite photonic crystals, when the number of periods of the finite structure is properly chosen.

  5. RADCHARM++: A C++ routine to compute the electromagnetic radiation generated by relativistic charged particles in crystals and complex structures

    Energy Technology Data Exchange (ETDEWEB)

    Bandiera, Laura; Bagli, Enrico; Guidi, Vincenzo [INFN Sezione di Ferrara and Dipartimento di Fisica e Scienze della Terra, Università degli Studi di Ferrara, Via Saragat 1, 44121 Ferrara (Italy); Tikhomirov, Victor V. [Research Institute for Nuclear Problems, Belarusian State University, Minsk (Belarus)

    2015-07-15

    The analytical theories of coherent bremsstrahlung and channeling radiation well describe the process of radiation generation in crystals under some special cases. However, the treatment of complex situations requires the usage of a more general approach. In this report we present a C++ routine, named RADCHARM++, to compute the electromagnetic radiation emitted by electrons and positrons in crystals and complex structures. In the RADCHARM++ routine, the model for the computation of e.m. radiation generation is based on the direct integration of the quasiclassical formula of Baier and Katkov. This approach allows one taking into account real trajectories, and thereby the contribution of incoherent scattering. Such contribution can be very important in many cases, for instance for electron channeling. The generality of the Baier–Katkov operator method permits one to simulate the electromagnetic radiation emitted by electrons/positrons in very different cases, e.g., in straight, bent and periodically bent crystals, and for different beam energy ranges, from sub-GeV to TeV and above. The RADCHARM++ routine has been implemented in the Monte Carlo code DYNECHARM++, which solves the classical equation of motion of charged particles traveling through a crystal under the continuum potential approximation. The code has proved to reproduce the results of experiments performed at the MAinzer MIkrotron (MAMI) with 855 MeV electrons and has been used to predict the radiation spectrum generated by the same electron beam in a bent crystal.

  6. Effect of Co-60 gamma radiation on optical, dielectric and mechanical properties of strontium L-ascorbate hexahydrate NLO crystal

    Science.gov (United States)

    Dileep, M. S.; Suresh Kumar, H. M.

    2018-04-01

    A potentially useful nonlinear optical semi-organic single crystal of strontium L-ascorbate hexahydrate (SLAH) was grown by solution growth slow evaporation technique at room temperature. The grown crystal is semi transparent, yellowish in color with monoclinic crystal system having space group P21 and is stable up to 198 °C. Further, SLAH crystals were irradiated with gamma rays produced by 60Co with different doses of 10 KGy, 30 KGy and 50 KGy at room temperature and then studied the effect of gamma-rays on dielectric properties, optical absorption, microhardness and SHG efficiency. The absorption study reveals that the absorbance of the grown crystal is appeared to be low throughout the visible region with a lower cutoff wavelength of 277 nm and these parameters are not affected upon gamma irradiation. The luminescence intensity of the crystal is also not affected by the irradiation. There is noticeable changes were observed in dielectric properties and hardness of the materials for different doses of gamma irradiation. The second harmonic generation (SHG) efficiency of the grown crystal is 0.54 times that of the KDP crystal and is decreased moderately by increasing the dosage of gamma irradiation.

  7. Influence of ionizing radiation on optical hardness of transparent dielectrics to action of huge intensity laser light

    International Nuclear Information System (INIS)

    Bedilov, M.R.; Khalilov, R.A.

    2006-01-01

    Full text: This paper presents results of researches of optical hardness of γ -irradiated with doze 10 4 - 10 9 rad alkali-silicate (K, GLS, LGS) and quartz (KU, KV, KSG) glasses against influence of radiation neodymium laser with intensity q = 0,1-1000 GWt/cm 2 . It is observed, that the laser produces damage of surface and volume of investigated glasses before and after γ-irradiation. This damage has threshold character and is always accompanied by a bright luminescence of plasma. Definition of threshold values of intensity superficial q s and volumetric q d laser produced damage was made by the complex method - fixing the moment of damage of transparent dielectric by simultaneous registration of the laser impulse which has passed through plasma of breakdown, mass-charge spectrum of ions of plasma and measuring the energy falling on the glass, and of penetrated and mirror-image radiations; and by optical microscopy. This method of research of influence γ-induced in transparent dielectric radiating defects on its optical stability against influence of laser radiation allows not only to define values q s and q d in the investigated interval of dozes, but also to investigate in details physical phenomena taking place in this process of interaction. On the basis of the received data quantitative characteristics of optical durability of the investigated glasses on wave length of λ1,06 microns depending on dozes of γ-irradiation and intensity of laser radiation are made. Doze dependences of charge and power spectra and quantitative characteristics of ions of plasma of breakdown were investigated at q≥ q s . In the investigated interval of dozes of γ- irradiation and intensity of laser radiation by a method of optical microscopy the morphology of occurring laser damage as surfaces, and volume of glass is also studied. It is found, that γ -induced defects in investigated glasses strongly effect on thresholds of damage q s and q d and on characteristics of ions

  8. Response of CsI:Pb Scintillator Crystal to Neutron Radiation

    Science.gov (United States)

    Costa Pereira, Maria da Conceição; Filho, Tufic Madi; Berretta, José Roberto; Náhuel Cárdenas, José Patrício; Iglesias Rodrigues, Antonio Carlos

    2018-01-01

    The helium-3 world crisis requires a development of new methods of neutron detection to replace commonly used 3He proportional counters. In the past decades, great effort was made to developed efficient and fast scintillators to detect radiation. The inorganic scintillator may be an alternative. Inorganic scintillators with much higher density should be selected for optimal neutron detection efficiency taking into consideration the relevant reactions leading to light emission. These detectors should, then, be carefully characterized both experimentally and by means of advanced simulation code. Ideally, the detector should have the capability to separate neutron and gamma induced events either by amplitude or through pulse shape differences. As neutron sources also generate gamma radiation, which can interfere with the measurement, it is necessary that the detector be able to discriminate the presence of such radiation. Considerable progress has been achieved to develop new inorganic scintillators, in particular increasing the light output and decreasing the decay time by optimized doping. Crystals may be found to suit neutron detection. In this report, we will present the results of the study of lead doped cesium iodide crystals (CsI:Pb) grown in our laboratory, using the vertical Bridgman technique. The concentration of the lead doping element (Pb) was studied in the range 5x10-4 M to 10-2 M . The crystals grown were subjected to annealing (heat treatment). In this procedure, vacuum of 10-6 mbar and continuous temperature of 350°C, for 24 hours, were employed. In response to neutron radiation, an AmBe source with energy range of 1 MeV to 12 MeV was used. The activity of the AmBe source was 1Ci Am. The fluency was 2.6 x 106 neutrons/second. The operating voltage of the photomultiplier tube was 1700 V; the accumulation time in the counting process was 600 s and 1800 s. The scintillator crystals used were cut with dimensions of 20 mm diameter and 10 mm height.

  9. Radiation effect on conductivity of oxygen-containing crystals of lithium fluoride

    Energy Technology Data Exchange (ETDEWEB)

    Shchepina, L.I.; Alekseeva, L.I.; Lobanov, B.D.; Kostyukov, V.M. (Irkutskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel' skij Inst. Prikladnoj Fiziki)

    1984-07-01

    The data are presented on an anomalous behaviour of the conductivity, sigma of oxygen-enriched LiF crystals irradiated by approximately 10/sup 5/ J/kg doses. The ultraviolet absorption spectra were used to measure the oxygen content. The samples were exposed to ..gamma..-radiation of a /sup 60/Co source. The anomalous behaviour of tau is manifested by deviation of the sigma temperature dependence from the exponential law and occurrence of the minimum on the curve. The anomalous behaviour covers the range of 580-660 K and terminates by the tau recovery up to the values of an intact samples.

  10. Tight-binding calculation of radiation loss in photonic crystal CROW.

    Science.gov (United States)

    Ma, Jing; Martínez, Luis Javier; Fan, Shanhui; Povinelli, Michelle L

    2013-01-28

    The tight binding approximation (TBA) is used to relate the intrinsic, radiation loss of a coupled resonator optical waveguide (CROW) to that of a single constituent resonator within a light cone picture. We verify the validity of the TBA via direct, full-field simulation of CROWs based on the L2 photonic crystal cavity. The TBA predicts that the quality factor of the CROW increases with that of the isolated cavity. Moreover, our results provide a method to design CROWs with low intrinsic loss across the entire waveguide band.

  11. Low index contrast heterostructure photonic crystal cavities with high quality factors and vertical radiation coupling

    Science.gov (United States)

    Ge, Xiaochen; Minkov, Momchil; Fan, Shanhui; Li, Xiuling; Zhou, Weidong

    2018-04-01

    We report here design and experimental demonstration of heterostructure photonic crystal cavities resonating near the Γ point with simultaneous strong lateral confinement and highly directional vertical radiation patterns. The lateral confinement is provided by a mode gap originating from a gradual modulation of the hole radii. High quality factor resonance is realized with a low index contrast between silicon nitride and quartz. The near surface-normal directional emission is preserved when the size of the core region is scaled down. The influence of the cavity size parameters on the resonant modes is also investigated theoretically and experimentally.

  12. Simulating the spectrum and the polarization characteristics of coherent radiation from ultrarelativistic electrons in a diamond crystal

    International Nuclear Information System (INIS)

    Truten', V.I.

    2000-01-01

    On the basis of a computer simulation, it is shown that, in the spectrum of radiation from ultrarelativistic electrons in oriented crystals, new maxima can appear in the low-frequency region in addition to ordinary coherent maxima. This effect is due to the influence of high-index planes on the radiation in question. The aforementioned new maxima manifest themselves not only in the spectrum but also in the polarization characteristics of the radiation

  13. Radiation physics of non-metallic crystals. Volume III, No. 3. Radiatsionnaya fizika nemetallicheskikh kristallov. Tom III, Chast 3

    Energy Technology Data Exchange (ETDEWEB)

    Konozenko, I D [ed.

    1971-01-01

    Separate articles are presented on studies concerned with radiation phenomena in ionic crystals and dielectrics. Topics include energy losses and electron escape in monocrystals, non-stationary acoustic absorption in monocrystals, charge behavior in radioactive dielectrics, the effects of electron radiation on the electroconductivity of organic dielectrics, adsorption of polyatomic gases in adsorbents, catalysis and inhibition of solid inorganic salt radiolysis, and the formation of additive paramagnetic centers in gamma radiated salts of alkaline earth metals. 253 references.

  14. Radiation-induced defect production in MgF2-Co crystals

    International Nuclear Information System (INIS)

    Nuritdinov, I.; Turdanov, K.; Mirinoyatova, N.M.; Rejterov, V.M.

    1996-01-01

    Impact of Co-admixture on structural radiation defects formation in the MgF 2 crystals is studied. It is found that the Co admixture facilitates the probability of generating the F- and m-type centers of radiation defects as well as creation of the F- and M-centers, perturbed by admixtures. The availability of structural defects leads in its turn to the admixture ions perturbation. It is reflected in the removal of prohibition on spin-prohibited transitions of the Co 2 + ions. It is assumed that creation of the M-centers is the main cause for removal of the prohibition on the spin-prohibited transitions. 8 refs., 4 figs

  15. Investigation of radiation-enhanced diffusions of non valency impurities in ionic crystals

    International Nuclear Information System (INIS)

    Surzhikov, A.P.; Pritulov, A.M.; Gyngazov, S.A.; Chernyavskij, A.V.

    1999-01-01

    Investigations of hetero valency ions Al +3 and Mg +2 diffusion in potassium bromide crystals, under the intensive electron radiation, were conducted. The electron accelerator ELV-6 generating a continuous electron beam of 1.4 MeV in power was used for the investigations. To discover the radiation effects, there was a comparison of outcomes of the heating under the same temperature and annealing duration values. The mass-spectrometer MS-7021M was used to measure the diffusion profiles. The experimental outcomes analysis was carried out by approximation of the experimental concentration profiles, using a relevant solution of Fick's equation. The numerical values of the diffusion factors for the set annealing temperatures were determined according to the approximation outcomes. The investigations were financed by the Russian Fundamental Research Fund

  16. Parametric X-rays and diffracted transition radiation in perfect and mosaic crystals

    International Nuclear Information System (INIS)

    Artru, X.; Rullhusen, P.

    1998-01-01

    The amplitude of X-ray emission by relativistic electrons in a single crystal, calculated in the kinematical approach, is decomposed unambiguously in Diffracted Transition Radiation (DTR) and Parametric X-rays (PXR). DTR becomes significant for γ > or similar to ω P ,γ being the Lorentz factor and ω P the plasma frequency. It is more collimated than PXR and, above threshold, its flux increases logarithmically with γ. However, it saturates with thickness at the Bragg primary extinction length l e . This saturation is accounted for only in the dynamical approach, the formulas of which are compared to the kinematical ones. The respective contributions of DTR and PXR are calculated for a simple model of mosaic crystal, taking into account saturation of DTR with thickness. The PXR flux is basically the same as in a perfect crystal. If the size of the domains is larger than l e , the DTR flux is multiplied by the number of domains crossed by the electron. For domains smaller than l e and γ > or similar to ω P , the DTR and PXR fluxes are of the same order of magnitude, up to logarithmic factors. In any case, mosaicity increases the total yield of X-ray photons. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  17. Probing polymer crystallization at processing-relevant cooling rates with synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Cavallo, Dario, E-mail: Dario.cavallo@unige.it [University of Genoa, Dept. of Chemistry and Industrial Chemistry, Via Dodecaneso 31, 16146 Genoa (Italy); Portale, Giuseppe [ESRF, Dubble CRG, Netherlands Organization of Scientific Research (NWO), 38043 Grenoble (France); Androsch, René [Martin-Luther-University Halle-Wittenberg, Center of Engineering Sciences, D-06099 Halle/S. (Germany)

    2015-12-17

    Processing of polymeric materials to produce any kind of goods, from films to complex objects, involves application of flow fields on the polymer melt, accompanied or followed by its rapid cooling. Typically, polymers solidify at cooling rates which span over a wide range, from a few to hundreds of °C/s. A novel method to probe polymer crystallization at processing-relevant cooling rates is proposed. Using a custom-built quenching device, thin polymer films are ballistically cooled from the melt at rates between approximately 10 and 200 °C/s. Thanks to highly brilliant synchrotron radiation and to state-of-the-art X-ray detectors, the crystallization process is followed in real-time, recording about 20 wide angle X-ray diffraction patterns per second while monitoring the instantaneous sample temperature. The method is applied to a series of industrially relevant polymers, such as isotactic polypropylene, its copolymers and virgin and nucleated polyamide-6. Their crystallization behaviour during rapid cooling is discussed, with particular attention to the occurrence of polymorphism, which deeply impact material’s properties.

  18. A nonlinear support vector machine model with hard penalty function based on glowworm swarm optimization for forecasting daily global solar radiation

    International Nuclear Information System (INIS)

    Jiang, He; Dong, Yao

    2016-01-01

    Highlights: • Eclat data mining algorithm is used to determine the possible predictors. • Support vector machine is converted into a ridge regularization problem. • Hard penalty selects the number of radial basis functions to simply the structure. • Glowworm swarm optimization is utilized to determine the optimal parameters. - Abstract: For a portion of the power which is generated by grid connected photovoltaic installations, an effective solar irradiation forecasting approach must be crucial to ensure the quality and the security of power grid. This paper develops and investigates a novel model to forecast 30 daily global solar radiation at four given locations of the United States. Eclat data mining algorithm is first presented to discover association rules between solar radiation and several meteorological factors laying a theoretical foundation for these correlative factors as input vectors. An effective and innovative intelligent optimization model based on nonlinear support vector machine and hard penalty function is proposed to forecast solar radiation by converting support vector machine into a regularization problem with ridge penalty, adding a hard penalty function to select the number of radial basis functions, and using glowworm swarm optimization algorithm to determine the optimal parameters of the model. In order to illustrate our validity of the proposed method, the datasets at four sites of the United States are split to into training data and test data, separately. The experiment results reveal that the proposed model delivers the best forecasting performances comparing with other competitors.

  19. Kinetics of non-equilibrium processes in non-linear crystals of lithium borates excited with synchrotron radiation

    CERN Document Server

    Ogorodnikov, I N; Isaenko, L I; Zinin, E I; Kruzhalov, A V

    2000-01-01

    The paper presents the results of a study of the LiB sub 3 O sub 5 and Li sub 2 B sub 4 O sub 7 crystals by the use of the luminescent spectroscopy with the sub-nanosecond time resolution under excitation of the high-power synchrotron radiation. The commonness in the origin of the non-equilibrium processes in these crystals as well as the observed differences in the luminescence manifestations is discussed.

  20. Kinetics of non-equilibrium processes in non-linear crystals of lithium borates excited with synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Ogorodnikov, I.N. E-mail: ogo@dpt.ustu.ru; Pustovarov, V.A.; Isaenko, L.I.; Zinin, E.I.; Kruzhalov, A.V

    2000-06-21

    The paper presents the results of a study of the LiB{sub 3}O{sub 5} and Li{sub 2}B{sub 4}O{sub 7} crystals by the use of the luminescent spectroscopy with the sub-nanosecond time resolution under excitation of the high-power synchrotron radiation. The commonness in the origin of the non-equilibrium processes in these crystals as well as the observed differences in the luminescence manifestations is discussed.

  1. radiation and electric field induced effects on the order-disorder phase in lithium sodium sulphate crystals

    Science.gov (United States)

    Hamed, A. E.; Kassem, M. E.; El-Wahidy, E. F.; El-Abshehy, M. A.

    1995-03-01

    The temperature dependence of specific heat at constant pressure, Cp(T), has been measured for lithium sodium sulphate, LiNaSo4 crystals, at different ?-radiation doses and external bias electric field (Eb), in the temperature range 300-900 K. A nonlinear dependence of transition temperature, T1 and a remarkable change in the thermodynamic parameters, were obtained as the effect of both electric field and ?-radiation. The effect of ?-radiation doses on the phase transition in LiNaSO4 crystals was explained as due to an internal bias field, Eb, originating from the interaction of polar defects with the order parameter of the host lattice. The internal bias field effect on the behaviour of Cp(T) in LiNaSO4 crystals was similar to that of the external electric field (E).

  2. New methods of highly efficient controlled generation of radiation by liquid crystal nanostructures in a wide spectral range

    International Nuclear Information System (INIS)

    Bagayev, S N; Klementyev, V M; Nyushkov, B N; Pivtsov, V S; Trashkeev, S I

    2012-01-01

    We report the recent results of research focused on a new kind of soft matter-the liquid-crystal nanocomposites with controllable mechanical and nonlinear optical properties. These are promising media for implementation of ultra-compact photonic devices and efficient sources of coherent radiation in a wide spectral range. We overview the technology of preparation of nematic-liquid-crystal media saturated with disclination defects. The defects were formed in different ways: by embedding nanoparticles and molecular objects, by exposure to alpha-particle flux. The defect locations were controlled by applying an electric field. We also present and discuss the recently discovered features of nematic-liquid-crystal media: a thermal orientation effect leading to the fifth-order optical nonlinearity, enormous second-order susceptibility revealed by measurements, and structural changes upon exposure to laser radiation. We report on efficient generation of harmonics, sum and difference optical frequencies in nematic-liquid-crystal media. In addition, transformation of laser radiation spectra to spectral supercontinua, and filamentation of laser beams were also observed in nematic-liquid-crystal media. We conclude that most nonlinear optical effects result from changes of the orientational order in the examined nematic liquid crystals. These changes lead to the symmetry breaking and disclination appearances.

  3. Radiation-stimulated yield of an impurity into interstitial sites in crystals KBr-Li and KCl-Li

    International Nuclear Information System (INIS)

    Bekeshev, A.Z.; Shunkeev, K.Sh.; Vasil'chenko, E.A.; Dauletbekova, A.K.; Ehlango, A.A.

    1996-01-01

    KCl and KBr crystals are taken as examples to show that the presence of Li impurity at X-radiation at temperatures above 200 K stimulates the creation of both impurity Hal 3 - (Li)-centers (V 4A -centers) and Hal 3 - centers (V 2 -centers). Increase of impurity concentration and X-radiation temperature (up to 300 K) results to increase of impurity stimulated creation of inherent Hal 3 - centers by more, than one order, as compared to pure crystals. Initial temperature of interstitial ion mobility was evaluated (about 140 K). 16 refs., 5 figs

  4. Spontaneous and stimulated undulator radiation by an ultra-relativistic positron channeling in a periodically bent crystal

    International Nuclear Information System (INIS)

    Krause, W.; Korol, A.V.; Solov'yov, A.V.; Greiner, W.

    2001-01-01

    We discuss the radiation generated by positrons channeling in a crystalline undulator. The undulator is produced by periodically bending a single crystal with an amplitude much larger than the interplanar spacing. Different approaches for bending the crystal are described and the restrictions on the parameters of the bending are discussed. We also present numeric calculations of the spontaneous emitted radiation and estimate the conditions for stimulated emission. Our investigations show that the proposed mechanism could be an interesting source for high energy photons and is worth to be studied experimentally

  5. Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

    CERN Document Server

    Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

    2002-01-01

    Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

  6. Stabilization of primary mobile radiation defects in MgF{sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lisitsyn, V.M. [National Research Tomsk Polytechnic University, pr. Lenina 30, Tomsk 634050 (Russian Federation); Lisitsyna, L.A. [State University of Architecture and Building, pl. Solyanaya 2, Tomsk 634003 (Russian Federation); Popov, A.I., E-mail: popov@ill.fr [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Abuova, F.U.; Akilbekov, A. [L.N. Gumilyov Eurasian National University, 3 Munaitpasova Str., Astana (Kazakhstan); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

    2016-05-01

    Non-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF{sub 2} and <0.001% in fluorides MeF{sub 2} (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF{sub 2} crystals with a focus on the H center stabilization in the form of the interstitial F{sub 2} molecules which is supported by presented experimental data.

  7. Elastic modulus, hardness and fracture behavior of Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystal

    International Nuclear Information System (INIS)

    Zeng Kaiyang; Pang Yongsong; Shen Lu; Rajan, K.K.; Lim, Leong-Chew

    2008-01-01

    The deformation, crack initiation, fracture behavior and mechanical properties of (0 0 1)-oriented single crystal of Pb(Zn 1/3 Nb 2/3 )O 3 -7% PbTiO 3 (PZN-7% PT) in both unpoled and poled states have been investigated by using nanoindentation, micro-indentation and three-point bending experiments. Nanoindentation experiments revealed that, unlike typical brittle materials, material pile-ups around the indentation impressions were commonly observed at ultra-low loads. The elastic modulus and hardness were also determined by using nanoindentation experiments. The critical indentation load for crack initiation, determined by using micro-indentation experiments, is 0.135 N for unpoled samples, increasing to 0.465 N for the positive surface (crack propagation direction against the poling direction) of poled samples but decreasing slightly to 0.132 N for the negative surface (crack propagation direction along the poling direction) of the poled samples. Indentation/strength (three-point bend) test showed a similar trend for the 'apparent' fracture toughness, giving 0.36 MPa√m for unpoled samples, increasing to 0.44 MPa√m for the positive surface of poled samples but decreasing to 0.30 MPa√m for the negative surface of poled samples. Polarized light microscopy and scanning electron microscopy were used to study the material adjacent to the indentations and the fracture surfaces produced by the three-point bend tests. The results were correlated with the various fracture properties observed

  8. Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    International Nuclear Information System (INIS)

    Gonçalves Bardi, Marcelo Augusto; Brocardo Machado, Luci Diva

    2012-01-01

    In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films. - Highlights: ► Color, gloss and hardness are directly influenced by the different pigments. ► Clear coating analysis indicates reduction on UV-light absorption. ► Color and gloss indices indicated aeration in function of cure degree.

  9. Tunable photonic crystal for THz radiation in layered superconductors: Strong magnetic-field dependence of the transmission coefficient

    International Nuclear Information System (INIS)

    Savel'ev, Sergey; Rakhmanov, A.L.; Nori, Franco

    2006-01-01

    Josephson plasma waves are scattered by the Josephson vortex lattice. This scattering results in a strong dependence, on the in-plane magnetic-field H ab , of the reflection and transmission of THz radiation propagating in layered superconductors. In particular, a tunable band-gap structure (THz photonic crystal) occurs in such a medium. These effects can be used, by varying H ab , for the selective frequency-filtering of THz radiation

  10. Splitting of the spectral radiation density maximum for relativistic positrons moving through a single crystal near the crystallographic axis

    International Nuclear Information System (INIS)

    Adejshvili, D.I.; Anufriev, O.V.; Bochek, G.L.; Vit'ko, V.I.; Kovalenko, G.D.; Nikolajchuk, L.I.; Khizhnyak, N.A.; Shramenko, B.I.

    1986-01-01

    The fast particle radiation is studied on the basis of the periodic potential model which takes into account the discrete structure of atomic strings or planes along the channel direction. Results of the experiments on the linear accelerator on radiation of relativistic 1035 and 1050 MeV positrons in the diamond (axis 110) and silicon (axis 111) single crystals, respectively, are in good agreement with calculated data

  11. Analysis of laser-generated plasma ionizing radiation by synthetic single crystal diamond detectors

    Czech Academy of Sciences Publication Activity Database

    Marinelli, M.; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Cutroneo, M.; Torrisi, L.; Margarone, Daniele; Velyhan, Andriy; Krása, Josef; Krouský, Eduard

    2013-01-01

    Roč. 272, May (2013), s. 104-108 ISSN 0169-4332 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279; GA MŠk EE.2.3.20.0087; GA MŠk(CZ) 7E09092; GA MŠk(CZ) LC528 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OPVK 3 Laser Zdroj(XE) CZ.1.07/2.3.00/20.0279; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087; 7FP LASERLAB-EUROPE(XE) 228334 Program:EE; FP7 Institutional support: RVO:68378271 Keywords : single crystal diamond * diamond detector * laser-generated plasma * ionizing radiation * time-of-fight spectrometer Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.538, year: 2013

  12. Radial Photonic Crystal for detection of frequency and position of radiation sources.

    Science.gov (United States)

    Carbonell, J; Díaz-Rubio, A; Torrent, D; Cervera, F; Kirleis, M A; Piqué, A; Sánchez-Dehesa, J

    2012-01-01

    Based on the concepts of artificially microstructured materials, i.e. metamaterials, we present here the first practical realization of a radial wave crystal. This type of device was introduced as a theoretical proposal in the field of acoustics, and can be briefly defined as a structured medium with radial symmetry, where the constitutive parameters are invariant under radial geometrical translations. Our practical demonstration is realized in the electromagnetic microwave spectrum, because of the equivalence between the wave problems in both fields. A device has been designed, fabricated and experimentally characterized. It is able to perform beam shaping of punctual wave sources, and also to sense position and frequency of external radiators. Owing to the flexibility offered by the design concept, other possible applications are discussed.

  13. Spectrally and Spatially Resolved Smith-Purcell Radiation in Plasmonic Crystals with Short-Range Disorder

    Directory of Open Access Journals (Sweden)

    I. Kaminer

    2017-01-01

    Full Text Available Electrons interacting with plasmonic structures can give rise to resonant excitations in localized plasmonic cavities and to collective excitations in periodic structures. We investigate the presence of resonant features and disorder in the conventional Smith-Purcell effect (electrons interacting with periodic structures and observe the simultaneous excitation of both the plasmonic resonances and the collective excitations. For this purpose, we introduce a new scanning-electron-microscope-based setup that allows us to probe and directly image new features of electron-photon interactions in nanophotonic structures like plasmonic crystals with strong disorder. Our work creates new possibilities for probing nanostructures with free electrons, with potential applications that include tunable sources of short-wavelength radiation and plasmonic-based particle accelerators.

  14. A Mathematica package for calculation of planar channeling radiation spectra of relativistic electrons channeled in a diamond-structure single crystal (quantum approach)

    Science.gov (United States)

    Azadegan, B.

    2013-03-01

    of charged particles in a continuous planar potential which is formed by the spatially and thermally averaged action of the individual electrostatic potentials of the crystal atoms of the corresponding plane. Classically, the motion of channeled particles through the crystal resembles transverse oscillations being the source of radiation emission. For electrons of energy less than 100 MeV considered here, planar channeling has to be treated quantum mechanically by a one-dimensional Schrödinger equation for the transverse motion. Hence, this motion of the channeled electrons is restricted to a number of discrete (bound) channeling states in the planar continuum potential, and the emission of channeling radiation is caused by spontaneous electron transitions between these eigenstates. Due to relativistic and Doppler effects, the energy of the emitted photons directed into a narrow forward cone is typically shifted up by about three to five orders of magnitude. Consequently, the observed energy spectrum of channeling radiation is characterized by a number of radiation lines in the energy domain of hard X-rays. Channeling radiation may, therefore, be applied as an intense, tunable, quasi-monochromatic X-ray source. Solution method: The problem consists in finding the electron wave function for the planar continuum potential. Both the wave functions and corresponding energies of channeling states solve the Schrödinger equation of transverse electron motion. In the framework of the so-called many-beam formalism, solving the Schrödinger equation reduces to a eigenvector-eigenvalue problem of a Hermitian matrix. For that the program employs the mathematical tools allocated in the commercial computation software Mathematica. The electric field of the atomic planes in the crystal forces dipole oscillations of the channeled charged particles. In the quantum mechanical approach, the dipole approximation is also valid for spontaneous transitions between bound states. The

  15. Thermal radiative properties of a photonic crystal structure sandwiched by SiC gratings

    International Nuclear Information System (INIS)

    Wang, Weijie; Fu, Ceji; Tan, Wenchang

    2014-01-01

    Spectral and directional control of thermal emission holds substantial importance in applications where heat transfer is predominantly by thermal radiation. In this work, we investigate the spectral and directional properties of thermal emission from a novel structure, which is constituted with a photonic crystal (PC) sandwiched by SiC gratings. Numerical results based on the RCWA algorithm reveal that greatly enhanced emissivity can be achieved in a broad frequency band and in a wide range of angle of emission. This promising emission feature is found to be caused by excitation of surface phonon polaritons (SPhPs), PC mode, magnetic polaritons (MPs) and Fabry–Pérot resonance from high order diffracted waves, as well as the coupling between different resonant modes. We show that the broad enhanced emissivity band can be manipulated by adjusting the dimensional parameters of the structure properly. -- Highlights: ► We propose a novel structure made of a photonic crystal sandwiched by SiC gratings. ► High emissivity can be achieved in a broad spectral band and angle range. ► We explain the result by excitation of multiple excited modes and their coupling

  16. Radiation damage in urania crystals implanted with low-energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

    2014-05-01

    Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

  17. Organic Crystal Growth Facility (OCGF) and Radiation Monitoring Container Device (RMCD) Groups in

    Science.gov (United States)

    1992-01-01

    The primary payload for Space Shuttle Mission STS-42, launched January 22, 1992, was the International Microgravity Laboratory-1 (IML-1), a pressurized manned Spacelab module. The goal of IML-1 was to explore in depth the complex effects of weightlessness of living organisms and materials processing. Around-the-clock research was performed on the human nervous system's adaptation to low gravity and effects of microgravity on other life forms such as shrimp eggs, lentil seedlings, fruit fly eggs, and bacteria. Materials processing experiments were also conducted, including crystal growth from a variety of substances such as enzymes, mercury iodide, and a virus. The Huntsville Operations Support Center (HOSC) Spacelab Payload Operations Control Center (SL POCC) at the Marshall Space Flight Center (MSFC) was the air/ground communication channel used between the astronauts and ground control teams during the Spacelab missions. Featured are activities of the Organic Crystal Growth Facility (OCGF) and Radiation Monitoring Container Device (RMCD) groups in the SL POCC during the IML-1 mission.

  18. High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

    International Nuclear Information System (INIS)

    Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

    2006-01-01

    Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

  19. Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal

    DEFF Research Database (Denmark)

    Backe, H.; Krambrich, D.; Lauth, W.

    2013-01-01

    ML source. Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation...

  20. Using a helium--neon laser to convert infrared radiation to visible emission on lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Aurtyunyan, E.A.; Kostanyan, R.B.; Mkrtchyan, V.S.; Mkrtchyan, M.A.

    1975-01-01

    The conversion of infrared emission to the visible region was investigated by mixing with helium-neon laser emission in lithium niobate crystals. The infrared source was a Globar, and the laser was the LG-75. Emission of the sum frequencies was filtered out. The spectral composition of the converted radiation was analyzed by the ISP-51 spectrograph with an FEU-79 photomultiplier at the output. The amplified photomultiplier signal was recorded by the ChZ-33 frequency meter. By varying the angle between the optical axis of the crystal and the incident emission, infrared radiation in the 1.75 to 3.3 ..mu..m wavelength band could be converted to visible emission. It is suggested that measurement of the wavelength of converted emission might be used to study the distribution of concentration nonhomogeneities in crystals.

  1. Status on PWO crystals from Bogoroditsk after one year of preproduction for CMS-ECAL

    CERN Document Server

    Auffray, Etiennette; Lecoq, P; Marcos, R; Sempere-Roldan, P; Schneegans, M; Annenkov, A N; Korzhik, M V

    2000-01-01

    In September 1998, the CMS electromagnetic calorimeter entered into its construction phase. Since that time, more than 2000 crystals have been produced by Bogoroditsk Techno-Chemical Plant (BTCP) in Russia and analysed at CERN. An overview about mechanical and optical properties as well as radiation hardness characteristics of these crystals will be presented. (8 refs).

  2. Thermal stability of radiation-induced free radicals in γ-irradiated l-alanine single crystals

    International Nuclear Information System (INIS)

    Maltar-Strmecki, N.; Rakvin, B.

    2005-01-01

    Decay of the radiation-induced stable free radicals in l-alanine single crystals and powders at the temperatures from 379 to 476K was examined by electron paramagnetic resonance. For single crystals, the calculated activation energy of the radical decay is 104.3±1.7kJ/mol (i.e. 12 538+/-202K) and the frequency factor lnν 0 is 24.1±0.4min -1 . The lifetime of the radical in single crystals at 296K is 162 years. The results confirm the long-term stability of the radicals, but the decay was found to be faster in large crystals than in powders

  3. Optical properties and radiation response of Ce{sup 3+}-doped GdScO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kochurikhin, Vladimir [General Physics Institute, 38 Vavilov Str., 119991 Moscow (Russian Federation); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2012-12-15

    10%-Ce doped GdScO{sub 3} perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO{sub 3} crystal showed photo- and radio-luminescence peaks due to Ce{sup 3+} of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  5. The accumulation of femtosecond laser radiation energy in crystals of lithium fluoride

    Science.gov (United States)

    Dresvyanskiy, V. P.; Glazunov, D. S.; Alekseev, S. V.; Losev, V. F.; Chadraa, B.; Bukhtsooj, O.; Baasankhuu, N.; Zandan, B.; Martynovich, E. F.

    2015-12-01

    We present the results of studies of energy accumulation during the non-destructive interaction of extremely intense near infrared laser radiation with model wide band gap dielectric crystals of lithium fluoride, when the intensity of pulses is sufficient for effective highly nonlinear absorption of light and for the excitation of the electron subsystem of matter and the energy of pulses is still not sufficient for significant heating, evaporation, laser breakdown or other destruction to occur. We studied the emission of energy in the form of light sum of thermally stimulated luminescence accumulated under conditions of self-focusing and multiple filamentation of femtosecond laser radiation. It was established that it's the F2 and F3+ color centers and supplementary to them centers of interstitial type which accumulate energy under the action of a single femtosecond laser pulses. When irradiated by series of pulses the F3, F3- and F4 centers additionally appear. F2 centers are the main centers of emission in the process of thermally stimulated luminescence of accumulated energy. The interstitial fluoride ions (I-centers) are the kinetic particles. They split off from the X3- centers in the result of thermal decomposition of latter on the I-centers and molecules X20. I-centers recombine with F3+ centers and form F2 centers in excited state. The latter produce the characteristic emission spectrum emitted in the form of thermally stimulated luminescence.

  6. Ultralong Radiative States in Hybrid Perovskite Crystals: Compositions for Submillimeter Diffusion Lengths

    KAUST Repository

    Alarousu, Erkki

    2017-08-29

    Organic-inorganic hybrid perovskite materials have recently evolved into the leading candidate solution-processed semiconductor for solar cells due to their combination of desirable optical and charge transport properties. Chief among these properties is the long carrier diffusion length, which is essential to optimizing the device architecture and performance. Herein, we used time-resolved photoluminescence (at low excitation fluence, 10.59 μJ·cm upon two-photon excitation), which is the most accurate and direct approach to measure the radiative charge carrier lifetime and diffusion lengths. Lifetimes of about 72 and 4.3 μs for FAPbBr and FAPbI perovskite single crystals have been recorded, presenting the longest radiative carrier lifetimes reported to date for perovskite materials. Subsequently, carrier diffusion lengths of 107.2 and 19.7 μm are obtained. In addition, we demonstrate the key role of the organic cation units in modulating the carrier lifetime and its diffusion lengths, in which the defect formation energies for FA cations are much higher than those with the MA ones.

  7. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

    International Nuclear Information System (INIS)

    Pease, R.L.; Brown, D.B.; Cohn, L.

    1997-01-01

    A hardness assurance test approach has been developed for bipolar linear circuits and devices in space. It consists of a screen for dose rate sensitivity and a characterization test method to develop the conditions for a lot acceptance test at high dose rate

  8. Radiation damage studies on synthetic NaCl crystals and natural rock salt for waste disposal applications

    International Nuclear Information System (INIS)

    Klaffky, R.W.; Swyler, K.J.; Levy, P.W.

    1979-01-01

    Radiation damage studies are being made on synthetic NaCl and natural rock salt crystals from various localities, including potential repository sites. Measurements are being made with equipment for recording the radiation induced F-center and colloid particle absorption bands during irradiation with 1.5 MeV electrons at various temperatures. A technique has been developed to resolve the overlapping F-center and colloid bands. The resulting spectra and curves of absorption vs. dose provide information on colloid particle size and concentration, activation energies for processes occurring during colloid formation, and additional data suggesting that both strain and radiation induced dislocations contribute to the colloid formation process

  9. A pixel unit-cell targeting 16ns resolution and radiation hardness in a column read-out particle vertex detector

    International Nuclear Information System (INIS)

    Wright, M.; Millaud, J.; Nygren, D.

    1993-01-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application. (orig.)

  10. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    International Nuclear Information System (INIS)

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application

  11. Comparison of the luminescent properties of Lu3Al5O12:Pr crystals and films under synchrotron radiation excitation

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Nizankovskiy, S.

    2016-01-01

    The work is dedicated to comparative investigation of the luminescent properties of Lu 3 Al 5 O 12 :Pr(LuAG:Pr) single crystals and single crystalline films using excitation by synchrotron radiation with an energy of 3.7–25 eV in the exciton range of LuAG host. We have found that the differences in the excitation spectra and luminescence decay kinetics of LuAG:Pr crystals and films are caused by involving the LuAl antisite defects and oxygen vacancies in the crystals and Pb 2+ flux related dopants in the films in the excitation processes of the Pr 3+ luminescence. Taking into account these differences, we have determined the energy structure of the Pr 3+ ions in LuAG host and estimated the differences in the energies of creation of excitons bound with the isolated Pr 3+ ions in LuAG:Pr films and the dipole Pr–LuAl antisite defect centers in the crystal counterpart. - Highlights: • Comparison of the luminescent properties of LuAG:Pr single crystals and films. • Superposition of the Pr 3+ and defect centers luminescence of LuAG:Pr crystal. • Different creation energies of an excitons bound with the Pr 3+ in LuAG:Pr crystals and films. • More faster decay kinetics of the Pr 3+ luminescence in LuAG:Pr films. • Low content of slow emission component in LuAG:Pr films.

  12. Radiation heredity: unusual structural-phase states and metallic crystals properties

    International Nuclear Information System (INIS)

    Melikhov, V.D.; Skakov, M.K.

    1998-01-01

    Some experimental results allowing to judge about possibilities of unusual structural phase states formation during use irradiation and high temperature treatment of metallic crystals are considered. During study of pure (99.99 %) and especially pure (99.999 %) aluminium it was established, that after heating of preliminary irradiated samples in reactor, and non-irradiated ones up to temperatures above melting point (660 deg C), but not higher than 820 deg C, and cooling an microstructure and substructure of both irradiated and non-irradiated metals have been essentially distinguished with each other. If first of them had typically polycrystal construction, that second one was monocrystal with good developed initial substructure. Radiation effects have been preserved even in liquid metal if it was not overheated higher critical point, which is determined by phase transition from quasi-liquid state to true liquid one. During study of irradiation and postradiation treatment of structure and properties of intermetallides Fe 3 Al it was revealed, that in initially irradiated regulated alloys the radiation effect is preserving at heating of above 0.85 T melt (that essentially exceed order-disorder transition temperature) (550 deg C) in non-irradiated alloys of prolonged exposure and hardening. At that, irradiated-hardened alloy distinguishing from not hardened one by lattice parameter (on 0.1 %), by configuration of nearest surrounding of iron atoms in elementary cell, by regulating extent of different kind of atoms in lattice knocks. It was revealed, that at fluence (5·10 24 n·m 2 ) an appearance of new phases, distinguishing from matrix by component content. It was shown, that irradiation and post-radiation treatment are methods for creation unusual structural-phase states and attach to metals and alloys new properties

  13. Irradiation of zinc single crystal with 500 keV singly-charged carbon ions: surface morphology, structure, hardness, and chemical modifications

    Science.gov (United States)

    Waqas Khaliq, M.; Butt, M. Z.; Saleem, Murtaza

    2017-07-01

    Cylindrical specimens of (1 0 4) oriented zinc single crystal (diameter  =  6 mm and length  =  5 mm) were irradiated with 500 keV C+1 ions with the help of a Pelletron accelerator. Six specimens were irradiated in an ultra-high vacuum (~10‒8 Torr) with different ion doses, namely 3.94  ×  1014, 3.24  ×  1015, 5.33  ×  1015, 7.52  ×  1015, 1.06  ×  1016, and 1.30  ×  1016 ions cm-2. A field emission scanning electron microscope (FESEM) was utilized for the morphological study of the irradiated specimens. Formation of nano- and sub-micron size rods, clusters, flower- and fork-like structures, etc, was observed. Surface roughness of the irradiated specimens showed an increasing trend with the ions dose. Energy dispersive x-ray spectroscopy (EDX) helped to determine chemical modifications in the specimens. It was found that carbon content varied in the range 22.86-31.20 wt.% and that oxygen content was almost constant, with an average value of 10.16 wt.%. The balance content was zinc. Structural parameters, i.e. crystallite size and lattice strain, were determined by Williamson-Hall analysis using x-ray diffraction (XRD) patterns of the irradiated specimens. Both crystallite size and lattice strain showed a decreasing trend with the increasing ions dose. A good linear relationship between crystallite size and lattice strain was observed. Surface hardness depicted a decreasing trend with the ions dose and followed an inverse Hall-Petch relation. FTIR spectra of the specimens revealed that absorption bands gradually diminish as the dose of singly-charged carbon ions is increased from 3.94  ×  1014 ions cm-1 to 1.30  ×  1016 ions cm-1. This indicates progressive deterioration of chemical bonds with the increase in ion dose.

  14. A radiation-hard dual-channel 12-bit 40 MS/s ADC prototype for the ATLAS liquid argon calorimeter readout electronics upgrade at the CERN LHC

    Energy Technology Data Exchange (ETDEWEB)

    Kuppambatti, J. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Ban, J. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Andeen, T., E-mail: tandeen@utexas.edu [Columbia University, Nevis Laboratories, Irvington, NY (United States); Brown, R.; Carbone, R. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Kinget, P. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Brooijmans, G.; Sippach, W. [Columbia University, Nevis Laboratories, Irvington, NY (United States)

    2017-05-21

    The readout electronics upgrade for the ATLAS Liquid Argon Calorimeters at the CERN Large Hadron Collider requires a radiation-hard ADC. The design of a radiation-hard dual-channel 12-bit 40 MS/s pipeline ADC for this use is presented. The design consists of two pipeline A/D channels each with four Multiplying Digital-to-Analog Converters followed by 8-bit Successive-Approximation-Register analog-to-digital converters. The custom design, fabricated in a commercial 130 nm CMOS process, shows a performance of 67.9 dB SNDR at 10 MHz for a single channel at 40 MS/s, with a latency of 87.5 ns (to first bit read out), while its total power consumption is 50 mW/channel. The chip uses two power supply voltages: 1.2 and 2.5 V. The sensitivity to single event effects during irradiation is measured and determined to meet the system requirements.

  15. Accompanying of parameters of color, brightness and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    International Nuclear Information System (INIS)

    Bardi, M.A.G.; Machado, L.D.B.

    2011-01-01

    Complete text of publication follows. In the search for alternatives to traditional paint systems containing solvents, the curing process of polymer coatings by ultraviolet (UV) light has been widely studied and discussed, specially because of their high content of solids and null emission of VOCs. Radiation curing is defined as the conversion of a reactive liquid into a solid through polymerization and crosslinking reactions between the species, promoted by the interaction of the chemical system with the incident ionizing radiation. The appearance of the coated object (e.g., color, gloss) is a complex function of the light incident on the object, the optical scattering characteristic of the material, and human perception. Pigments are very fine powders being nearly insoluble in binders and solvents, but provide color and the ability to hide the underlying surface. In this context, this paper aims to investigate variations on color, brightness and hardness of UV-cured pigmented coatings by different doses. When it comes to irradiation exposition, the incorporation of pigments can preferentially cause its reflection or absorption of the incident radiation. Reflection usually occurs at the pigment surface within the resin so that the radiation has to pass through the top layers twice. Some degradation can, therefore, occur at the surface, and this is why materials frequently lose gloss on exposure.

  16. Crystal growth and characterization of europium doped lithium strontium iodide scintillator as an ionizing radiation detector

    Science.gov (United States)

    Uba, Samuel

    High performance detectors used in the detection of ionizing radiation is critical to nuclear nonproliferation applications and other radiation detectors applications. In this research we grew and tested Europium doped Lithium Strontium Iodide compound. A mixture of lithium iodide, strontium iodide and europium iodide was used as the starting materials for this research. Congruent melting and freezing temperature of the synthesized compound was determined by differential scanning calorimetry (DSC) using a Setaram Labsys Evo DSC-DTA instrument. The melting temperatures were recorded at 390.35°C, 407.59°C and freezing temperature was recorded at 322.84°C from a graph of heat flow plotted against temperature. The synthesized material was used as the charge for the vertical Bridgeman growth, and a 6.5 cm and 7.7cm length boule were grown in a multi-zone transparent Mullen furnace. A scintillating detector of thickness 2.53mm was fabricated by mechanical lapping in mineral oil, and scintillating response and timing were obtained to a cesium source using CS-137 isotope. An energy resolution (FWHM over peak position) of 12.1% was observed for the 662keV full absorption peak. Optical absorption in the UV-Vis wavelength range was recorded for the grown crystal using a U-2900 UV/VIS Spectrophotometer. Absorption peaks were recorded at 194nm, 273nm, and 344nm from the absorbance spectrum, various optical parameters such as absorption coefficient, extinction coefficient, refractive index, and optical loss were derived. The optical band gap energy was calculated using Tauc relation expression at 1.79eV.

  17. A mechanistic model for radiation-induced crystallization and amorphization in U3Si

    International Nuclear Information System (INIS)

    Rest, J.

    1994-06-01

    Radiation-induced amorphization is assessed. A rate-theory model is formulated wherein amorphous clusters are formed by the damage event These clusters are considered centers of expansion (CE), or excess-free-volume zones. Simultaneously, centers of compression (CC) are created in the material. The CCs are local regions of increased density that travel through the material as an elastic (e.g., acoustic) shock wave. The CEs can be annihilated upon contact with CCs (annihilation probability depends on height of the energy barrier), forming either a crystallized region indistinguishable from the host material, or a region with a slight disorientation (recrystallized grain). Recrystallized grains grow by the accumulation of additional CCs. Full amorphization is calculated on the basis of achieving a fuel volume fraction consistent with the close packing of spherical entities. Amorphization of a recrystallized grain is hindered by the grain boundary. Preirradiation of U 3 Si above the critical temperature for amorphization results in of nanometer-size grains. Subsequent reirradiation below the critical temperature shows that the material has developed a resistance to radiation-induced amorphization higher dose needed to amorphize the preirradiated samples than now preirradiated samples. In the model, it is assumed that grain boundaries act as effective defect sinks, and that enhanced defect annihilation is responsible for retarding amorphization at low temperature. The calculations have been validated against data from ion-irradiation experiments with U 3 Si. To obtain additional validation, the model has also been applied to the ion-induced motion of the interface between crystalline and amorphous phases of U 3 Si. Results of this analysis are compared to data and results of calculations for ion bombardment of Si

  18. Crystal Growth of New Radiation Detector Materials in Microgravity, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — RMD proposes to conduct a series of crystal growth experiments on the International Space Station in the SUBSA furnace inside the MSG glovebox to grow crystals of...

  19. Development of radiation detectors based on KMgF3:Tb nano crystals synthesized by microwave

    International Nuclear Information System (INIS)

    Herrero C, R.; Villicana M, M.; Garcia S, L.; Custodio C, M. A.; Gonzalez M, P. R.; Mendoza A, D.

    2015-10-01

    The development of new thermoluminescent (Tl) materials of the size of KMgF 3 :Tb nano crystals by microwave technique is a new alternative for obtaining new radiation detectors (dosimeters) for environmental dosimetry, personal, clinical, research and industry. This technique requires the preparation of the precursors of magnesium trifluoro acetates Mg(CF 3 COO) 2 and potassium K(CF 3 COO), finally the synthesis of KMgF 3 :Tb is realized via microwave. The synthesis was carried out in a microwave reactor mono wave 300 Anton-Paar. Trifluoro acetates are introduced into the reactor at a ratio of 1:1 mmol under inert atmosphere. The product was collected for centrifugation, washed several times with ethanol and dried at 60 degrees C for 10 h. The KMgF 3 obtained without doping and doped with Tb +3 ions were subjected to heat treatment at high temperatures for different lengths of time for their sensitization, the samples treated at 700 degrees C were those showing better Tl signal to be irradiated with gammas of 60 Co. The characterization of the obtained materials was carried out by X-ray diffraction, scanning electron microscopy and thermogravimetric analysis. (Author)

  20. Gamma radiation effect on n-InP crystals with impurity clusters

    International Nuclear Information System (INIS)

    Vitovskij, N.A.; Dakhno, A.N.; Emel'yanenko, O.V.; Lagunova, T.S.; Mashovets, T.V.

    1982-01-01

    Parameters of acceptor-impurity atom clusters have been investigated for the cases of nonirradiated and gamma-irradiated n-InP crystals. Temperature dependences of electric conductivity, the Hall coefficient and the longitudinal magnetoresistance have been measured both in darkness and in lighting, the kinetics of the photoconductivity drop has also been studied. It is shown that in nonirradiated n-InP:Cu and n-InP-Zn the number of atoms in the cluster may be about 25-30. The concentration of the clusters may reach 10 11 cm -3 . Gamma-radiation increases the number of atoms in the cluster up to approximately equal to 40 with the insignificant change of the radius. In the nonirradiated material, the potential barrier heights created by the cluster are 0.15 eV and 0.4 eV at 78 and 300 K, respectively. The irradiation increases the barrier and the fraction of the volume occupied by the space-charge regions which overlap if the dose is sufficiently high

  1. Structuring of material parameters in lithium niobate crystals with low-mass, high-energy ion radiation

    Science.gov (United States)

    Peithmann, K.; Eversheim, P.-D.; Goetze, J.; Haaks, M.; Hattermann, H.; Haubrich, S.; Hinterberger, F.; Jentjens, L.; Mader, W.; Raeth, N. L.; Schmid, H.; Zamani-Meymian, M.-R.; Maier, K.

    2011-10-01

    Ferroelectric lithium niobate crystals offer a great potential for applications in modern optics. To provide powerful optical components, tailoring of key material parameters, especially of the refractive index n and the ferroelectric domain landscape, is required. Irradiation of lithium niobate crystals with accelerated ions causes strong structured modifications in the material. The effects induced by low-mass, high-energy ions (such as 3He with 41 MeV, which are not implanted, but transmit through the entire crystal volume) are reviewed. Irradiation yields large changes of the refractive index Δn, improved domain engineering capability within the material along the ion track, and waveguiding structures. The periodic modification of Δn as well as the formation of periodically poled lithium niobate (PPLN) (supported by radiation damage) is described. Two-step knock-on displacement processes, 3He→Nb and 3He→O causing thermal spikes, are identified as origin for the material modifications.

  2. Electronic relaxations of radiative defects of the anion sublattice in cesium bromide crystals and exoemission of electrons

    CERN Document Server

    Galyij, P V

    2002-01-01

    The paper presents the results of investigations of thermostimulated exoelectron emission (TSEE) from CsBr crystal, excited by moderate doses (D <= 10 sup 4 Gy) of ultraviolet (h nu <= 7 eV) that selectively creates anion excitons and radiative defects in the anion sublattice. Having used the previously established connection between thermoactivated processes such as thermostimulated exoemission, electroconductivity, and luminescence in the irradiated crystal lattice, the concentrations of exoemission-active centers (EAC) and kinetics parameters of TSEE are calculated. The EAC concentration calculated on a base of the bulk, thermoactivated-recombinational, and band-gap Auger-like exoemission mechanisms, are in satisfactory agreement with the concentration of electron color centers in the irradiated crystals.

  3. Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

    International Nuclear Information System (INIS)

    Red'ko, R.A.; Budzulyak, S.I.; Vakhnyak, N.D.; Demchina, L.A.; Korbutyak, D.V.; Konakova, R.V.; Lotsko, A.P.; Okhrimenko, O.B.; Berezovskaya, N.I.; Bykov, Yu.V.; Egorov, S.V.; Eremeev, A.G.

    2016-01-01

    Effect of microwave radiation (24 GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5 eV was studied using the low-temperature (T=2 K) photoluminescence (PL) technique. The shapes of donor–acceptor pairs (DAP) and Y PL bands were studied in detail. The Huang–Rhys factor was calculated for the DAP luminescence depending on microwave radiation treatment. The increase of the distance between the DAP components responsible for emission at 1.455 eV and the quenching of Y-band due to microwave irradiation were observed. The method to decrease the amount of extended defects in near-surface layers of CdTe:Cl single crystals has been proposed.

  4. Focusing of white synchrotron radiation using large-acceptance cylindrical refractive lenses made of single – crystal diamond

    Energy Technology Data Exchange (ETDEWEB)

    Polikarpov, M., E-mail: polikarpov.maxim@mail.ru [Immanuel Kant Baltic Federal University, Nevskogo 14a, 23600 Kaliningrad (Russian Federation); Snigireva, I. [European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38043 (France); Snigirev, A. [Immanuel Kant Baltic Federal University, Nevskogo 14a, 23600 Kaliningrad (Russian Federation); European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38043 (France)

    2016-07-27

    Large-aperture cylindrical refractive lenses were manufactured by laser cutting of single-crystal diamond. Five linear single lenses with apertures of 1 mm and the depth of the structure of 1.2 mm were fabricated and tested at the ESRF ID06 beamline performing the focusing of white-beam synchrotron radiation. Uniform linear focus was stable during hours of exposure, representing such lenses as pre-focusing and collimating devices suitable for the front-end sections of today synchrotron radiation sources.

  5. Focusing of white synchrotron radiation using large-acceptance cylindrical refractive lenses made of single – crystal diamond

    International Nuclear Information System (INIS)

    Polikarpov, M.; Snigireva, I.; Snigirev, A.

    2016-01-01

    Large-aperture cylindrical refractive lenses were manufactured by laser cutting of single-crystal diamond. Five linear single lenses with apertures of 1 mm and the depth of the structure of 1.2 mm were fabricated and tested at the ESRF ID06 beamline performing the focusing of white-beam synchrotron radiation. Uniform linear focus was stable during hours of exposure, representing such lenses as pre-focusing and collimating devices suitable for the front-end sections of today synchrotron radiation sources.

  6. Low-temperature radiation-induced polymerization of vinyl monomers in the crystal matrix of polydimethyl siloxane

    International Nuclear Information System (INIS)

    Mujdinov, M.R.; Kiryukhin, D.P.; Barkalov, I.M.; Gol'danskij, V.I.

    1979-01-01

    It is shown that in the process of the slow cooling of vinyl monomer solution in dimethyl siloxane rubber (SKT mark) crystallization of SKT takes place, at that, considerable part of vinyl monomers (up to 70 wt. % of rubber) is sorbed in the pores of crystal matrix and it does not form its proper crystal phase. Slight anomalies in heat capacity in the 120-140 K range, the melting of non-sorbed part of MA and the melting of SKT + MA ''complex'' have been observed on the calorimetric curve at the SKT - methylacrylate (MA) system heating. In the process of heating such samples, irradiated at 77 K by γ-rays of 60 Co, heat evolution connected with sorbed monomer polarization, has been observed starting from 125-130 K. In the 140-200 K range already before MA and SKT melting intense polymerization takes place, which results in practically full monomer consumption and formation of graft copolymer. Radiation-chemical yield of monomer reduction reaches G(-M) approximately equal to 2x10 5 molecules for 100 eV, radiation yield of postpolymerization of crystal MA does not exceed G(-M) approximately equal to 50 molecules for 100 eV

  7. Quasicharacteristic radiation of relativistic electrons at orientation motion in lithium halides crystals along charged planes and axes

    Science.gov (United States)

    Maksyuta, N. V.; Vysotskii, V. I.; Efimenko, S. V.

    2016-07-01

    The paper deals with the investigation of the orientation motion of relativistic electrons in charged (111) planes and charged [110] axes of lithium halides ionic crystals of LiF, LiCl, LiBr and LiI. On the basis of these investigations the spectra of quasicharacteristic radiation for the electron beams with various Lorentz-factors both in planar and axial cases have been calculated numerically.

  8. First studies of 500-nm Cherenkov radiation from 255-MeV electrons in a diamond crystal

    Energy Technology Data Exchange (ETDEWEB)

    Takabayashi, Y., E-mail: takabayashi@saga-ls.jp [SAGA Light Source, 8-7 Yayoigaoka, Tosu, Saga 841-0005 (Japan); Fiks, E.I. [National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); Pivovarov, Yu.L. [National Research Tomsk Polytechnic University, 634050 Tomsk (Russian Federation); National Research Tomsk State University, 634050 Tomsk (Russian Federation)

    2015-06-12

    The first experiment on Cherenkov light from 255-MeV electrons passing through a 50-μm-thick diamond crystal in a special geometry allowing extraction of 500-nm Cherenkov light at a right angle with respect to the electron beam direction has been performed at the injector linac of SAGA Light Source accelerator facility. The dependence of 500-nm Cherenkov light intensity (separated by a band-pass filter) on the crystal rotation angle was measured by a CCD detector. The experimentally obtained rocking curve with an intense maximum is theoretically explained as the projector effect of Cherenkov light deflected by the exit surface of the crystal. The width of the rocking curve is explained by the convolution of the standard Tamm–Frank angular distribution of Cherenkov radiation with chromatic aberration, the multiple scattering of electrons in a crystal, and initial electron beam angular divergence. In addition, it is found that the Cherenkov light intensity did not change under the (220) planar channeling condition, which is consistent with a recent theory. - Highlights: • Cherenkov light from 255-MeV electrons in a diamond crystal has been investigated. • The Cherenkov light from channeled electrons has been observed for the first time. • The experimental results are in good agreement with theory.

  9. Study of fast electrons from hard-X radiation; Etude des electrons rapides a partir du rayonnement X-dur

    Energy Technology Data Exchange (ETDEWEB)

    Arslanbekov, R.

    1995-12-19

    The goal of this thesis is the study of fast electron dynamics by means of the hard X-ray diagnosis installed in TORE SUPRA and numerical simulations. Fast electrons are generated in the plasma in the presence of the injected lower hybrid (LH) waves. Two aspects are studied in detail: the lower hybrid wave propagation and absorption in a periodically perturbed media and 2-D Fokker-Planck modelling of the fast electron dynamics in the presence of the LH power. Ripple effects on lower hybrid wave propagation and absorption are investigated using the ray tracing technique. A cylindrical equilibrium is first studied and a strong modification of the ray dynamics is predicted. Calculations are carried out in a real toroidal geometry corresponding to TORE SUPRA. It is shown that the lack of toroidal axisymmetry of the magnetic field may result in a modification of the ray evolution even if the global ray evolution is governed by the larger poloidal inhomogeneity. Simulation of LH experiments are performed for TORE SUPRA tokamak which has a large magnetic ripple (7% at the plasma edge). By considering ripple perturbation in LH current drive simulations, a better agreement is found with experimental results, in particular with the hard-X spectra and the current density profiles. In the second part of the thesis, a 2-D modeling of the fast electron dynamics in the velocity phase space is considered, based on the 2-D relativistic electron Fokker-Planck equation. Electron distribution functions obtained are used to calculate non-thermal Bremsstrahlung emission for different TORE SUPRA shots in a wide range of experimental conditions. (J.S.). 168 refs., 93 figs., 1 tab., 3 appendix.

  10. The CMS crystal calorimeter

    CERN Document Server

    Lustermann, W

    2004-01-01

    The measurement of the energy of electrons and photons with very high accuracy is of primary importance far the study of many physics processes at the Large Hadron Collider (LHC), in particular for the search of the Higgs Boson. The CMS experiment will use a crystal calorimeter with pointing geometry, almost covering 4p, as it offers a very good energy resolution. It is divided into a barrel composed of 61200 lead tungstate crystals, two end-caps with 14648 crystals and a pre-shower detector in front of the end-cap. The challenges of the calorimeter design arise from the high radiation environment, the 4 Tesla magnetic eld, the high bunch crossing rate of 40 MHz and the large dynamic range, requiring the development of fast, radiation hard crystals, photo-detectors and readout electronics. An overview of the construction and design of the calorimeter will be presented, with emphasis on some of the details required to meet the demanding performance goals. 19 Refs.

  11. Evolution of energy deposition processes in anthracene single crystal from photochemistry to radiation chemistry under excitation with synchrotron radiation from 3 to 700 eV

    International Nuclear Information System (INIS)

    Nakagawa, Kazumichi; Jin, Zhaohui; Shimoyama, Iwao; Miyake, Yasuyuki; Ueno, Madoka; Kishigami, Yoichi; Horiuchi, Hiroki; Tanaka, Masahito; Kaneko, Fusae; Nishimagi, Hironobu; Kobayashi, Hiroyuki; Kotani, Masahiro

    2008-01-01

    Absolute values of quantum yield Φ(hν) of singlet exciton formation in anthracene single crystals were measured as a function of photon energy hν, with the usage of synchrotron radiation (SR) in 3-700 eV region. Values of Φ(hν) were found to increase linearly for hν≥75 eV. For hν≤40 eV, values of Φ(hν) gave a wealth of structures and are not linear to hν. Because number of secondary electrons produced by radiation is thought to increase in proportional to the incident photon energy, it is natural to conclude that the radiation chemistry effect becomes dominant above 75 eV. On the other hand, values of Φ(hν) showed response due to resonance rather than linear dependence with hν, which implies that the photochemical effect is dominant below 40 eV

  12. A study of the impact of radiation exposure on the uniformity of large CsI(Tl) crystals for the BaBar detector

    International Nuclear Information System (INIS)

    Hryn'ova, Tetiana; Kim, Peter; Kocian, Martin; Perl, Martin; Rogers, Howard; Schindler, Rafe H.; Wisniewski, William J.

    2004-01-01

    We describe an apparatus that allows simultaneous exposure of large CsI(Tl) crystals to ionizing radiation and precise measurement of the longitudinal changes in light yield of the crystals. We present herein the results from this device for exposures up to 10krad

  13. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    OpenAIRE

    Riegel, C; Backhaus, M; Hoorne, J W Van; Kugathasan, T; Musa, L; Pernegger, H; Riedler, P; Schaefer, D; Snoeys, W; Wagner, W

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS techn...

  14. Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

    Science.gov (United States)

    Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

    2012-08-01

    Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

  15. Improving radiation hardness in space-based Charge-Coupled Devices through the narrowing of the charge transfer channel

    Science.gov (United States)

    Hall, D. J.; Skottfelt, J.; Soman, M. R.; Bush, N.; Holland, A.

    2017-12-01

    Charge-Coupled Devices (CCDs) have been the detector of choice for imaging and spectroscopy in space missions for several decades, such as those being used for the Euclid VIS instrument and baselined for the SMILE SXI. Despite the many positive properties of CCDs, such as the high quantum efficiency and low noise, when used in a space environment the detectors suffer damage from the often-harsh radiation environment. High energy particles can create defects in the silicon lattice which act to trap the signal electrons being transferred through the device, reducing the signal measured and effectively increasing the noise. We can reduce the impact of radiation on the devices through four key methods: increased radiation shielding, device design considerations, optimisation of operating conditions, and image correction. Here, we concentrate on device design operations, investigating the impact of narrowing the charge-transfer channel in the device with the aim of minimising the impact of traps during readout. Previous studies for the Euclid VIS instrument considered two devices, the e2v CCD204 and CCD273, the serial register of the former having a 50 μm channel and the latter having a 20 μm channel. The reduction in channel width was previously modelled to give an approximate 1.6× reduction in charge storage volume, verified experimentally to have a reduction in charge transfer inefficiency of 1.7×. The methods used to simulate the reduction approximated the charge cloud to a sharp-edged volume within which the probability of capture by traps was 100%. For high signals and slow readout speeds, this is a reasonable approximation. However, for low signals and higher readout speeds, the approximation falls short. Here we discuss a new method of simulating and calculating charge storage variations with device design changes, considering the absolute probability of capture across the pixel, bringing validity to all signal sizes and readout speeds. Using this method, we

  16. Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

    Science.gov (United States)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-01-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  17. Investigations of the energy and angular dependence of ultra-short radiation lengths in Si, Ge and W single crystals

    CERN Multimedia

    Very recently, experiments NA33 and WA81 have shown that pair production by energetic photons incident along crystalline directions is strongly enhanced as compared to the Bethe-Heitler value for amorphous targets. The enhanced pair production sets in at around 40 GeV in Ge crystals and rises almost linearly with photon energy up to a calculated maximum enhancement of around thirty. In Si, this maximum is expected to be nearly two orders of magnitude above the Bethe-Heitler value.\\\\ For GeV electrons/positrons incident along crystal axes, the radiation energy loss also shows a very large enhancement of approximately two orders of magnitude. In a 0.4 mm W crystal, a 100 GeV electron is expected to emit on average 70% of its total energy.\\\\ The combination of these two dramatic enhancements means that the electromagnetic shower develops much faster around crystalline directions, corresponding to ultrashort radiation lengths.\\\\ The aim of this experiment is to investigate the shower development in ...

  18. Bread-Board Testing of the Radiation Hard Electron Monitor (RADEM) being developed for the ESA JUICE Mission

    Science.gov (United States)

    Mrigakshi, Alankrita; Hajdas, Wojtek; Marcinkowski, Radoslaw; Xiao, Hualin; Goncalves, Patricia; Pinto, Marco; Pinto, Costa; Marques, Arlindo; Meier, Dirk

    2016-04-01

    The RADEM instrument will serve as the radiation monitor for the JUICE spacecraft. It will characterize the highly dynamic radiation environment of the Jovian system by measuring the energy spectra of energetic electrons and protons up to 40 MeV and 250 MeV, respectively. It will also determine the directionality of 0.3-10 MeV electrons. Further goals include the detection of heavy ions, and the determination of the corresponding LET spectra and dose rates. Here, the tests of the Electron and Proton Telescopes, and the Directionality Detector of the RADEM Bread-Board model are described. The objective of these tests is to validate RADEM design and physical concept applied therein. The tests were performed at various irradiation facilities at the Paul Scherrer Institute (PSI) where energy ranges relevant for space applications can be covered (electrons: ≤100 MeV and protons: ≤230 MeV). The measured values are also compared with GEANT4 Monte-Carlo Simulation results.

  19. Total ionizing dose radiation hardness of the ATLAS MDT-ASD and the HP-Agilent 0.5 um CMOS process

    CERN Document Server

    Posch, C

    2002-01-01

    A total ionizing dose (TID) test of the MDT-ASD, the ATLAS MDT front-end chip has been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5 um CMOS process (AMOS14TB). The accumulated TID at the end of the test was 300 krad, delivered by 160 MeV protons at a rate of approximately 70 rad/sec. All 10 irradiated chips retained their full functionality and performance and showed only irrelevantly small changes in device parameters. As the total accumulated dose is substantially higher than the relevant ATLAS Radiation Tolerance Criteria (RTCtid), the results of this test indicate that MDT-ASD meets the ATLAS TID radiation hardness requirements. In addition, the results of this test correspond well with results of a 30 keV gamma TID irradiation test performed by us on an earlier prototype at the CERN x-ray facility as well as with results of other irradiation test on this process found in literature.

  20. High-resolution, hard x-ray photoemission investigation of BaFe2As2: Moderate influence of the surface and evidence for a low degree of Fe 3d-As 4p hybridization of electronic states near the Fermi energy

    NARCIS (Netherlands)

    de Jong, S.; Huang, Y.; Huisman, R.; Massee, F.; Thirupathaiah, R.; Gorgoi, M.; Schaefers, F.; Follath, F.; Goedkoop, J.B.; Golden, M.S.

    2009-01-01

    Photoemission data taken with hard x-ray radiation on cleaved single crystals of the barium parent compound of the MFe2As2 pnictide high-temperature superconductor family are presented. Making use of the increased bulk sensitivity upon hard x-ray excitation, and comparing the results to data taken

  1. Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

    International Nuclear Information System (INIS)

    Jadwisienczak, W.; Wisniewski, K.; Spencer, M.; Thomas, T.; Ingram, D.

    2010-01-01

    We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ∼0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu 3+ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu 3+ ion transition ( 5 D 0 → 7 F 2 ) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu 3+ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu 3+ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu 3+ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr-GaN:Eu 3+ composite. Fairly good radiation damage resistance was obtained for 1.7 x 10 12 to 5 x 10 13 cm -2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.

  2. Development of beam halo monitors for the European XFEL using radiation hard sensors and demonstration of the technology at FLASH

    International Nuclear Information System (INIS)

    Ignatenko, Alexandr

    2015-05-01

    The European X-Ray Free-Electron Laser (E-XFEL), currently under construction in Hamburg, Germany, is intended to be an international linear accelerator (linac) based user facility. Its electron beam can carry maximal average power of 600 kW. A beam with such a high power needs to be carefully transmitted through the machine and safely dumped after utilization. This is supported by various diagnostics tools. A Beam Halo Monitor (BHM) based on synthetic diamond and sapphire sensors has been designed. Diamond sensors are developed by the company element6 for the detection of ionizing radiation and used previously elsewhere. Sapphire sensors are in this thesis applied for the first time. The BHM concept has been applied already at the Free-electron Laser in Hamburg (FLASH). A module with four diamond and four sapphire sensors was designed, installed inside the beam pipe, commissioned, calibrated and has been successfully operated for 4 years. The system contributed significantly to safe and efficient operation of FLASH. Both types of the sensors for the BHM were characterized. Measurements of radiation tolerance are done in a 10 MeV electron beam for polycrystalline CVD (pCVD) diamond sensors for the first time up to a dose of 10 MGy and for sapphire sensors up to 5 MGy. The charge collection efficiency (CCE) drops as a function of the absorbed dose, is however still sufficient for application as a BHM. To improve a main sensor characteristic, the charge collection efficiency, for sapphire sensors the impurity concentration was reduced and different growth techniques were compared. Finally, charge collection efficiency of about 5 % for a bias voltage of 500 V was reached. The BHM concept for the XFEL is designed and in the construction phase.

  3. The influence of sol on the behavior of melting and nonisothermal crystallization kinetic of radiation cross-linking HDPE

    International Nuclear Information System (INIS)

    Deng Pengyang; Xie Hongfeng; Deng Mingxiao; Zhong Xiaoguang

    2000-01-01

    By using DSC, the behavior of second melting and nonisothermal crystallization of pure gel pure sol and sol-gel blend of radiation crosslinking HDPE was studied. The authors found that, because of the existence of sol, there is notable difference between pure gel and pure sol or sol-gel blend. Under the same dose, the melting point and crystallization temperature of pure sol and sol-gel blend are higher than that of pure gel. At the same time, the authors also found that the Avrami exponent of original PE, pure sol and sol-gel blend is the similar to each other and different to that of pure gel, which means that the procedure of nucleation and growth of these samples is the same and also different to that of pure gel

  4. Development of a neutron irradiation device with a cooled crystal filter: Radiation physical properties and applications in in vivo irradiations

    International Nuclear Information System (INIS)

    Braetter, P.; Galinke, E.; Gatschke, W.; Gawlik, D.; Roesick, U.

    1979-01-01

    The radiation-physical and geometrical properties of a neutron-beam, collimated with a Bi-crystal filter were investigated at the reactor BER II. The influence of the crystal temperature as well as the actions of a reflector and a collimator on neutron flux-density and neutron field of the thermal neutrons were investigated. The dose contributions of the thermal, epithermal and fast neutrons as well as γ-radiation was determined by activation of the sample respective with TLD-measurements. The influence of irradiation and measurement geometry on the sensitivity and detection probability was investigated by means of phantom irradiations. The method prooved to be suitable, to detect changes of the Ca-content in a rat hind leg by about 10%. In investigations on animal groups of about 10 animals a threshold of detectability for changes of the ca-content is to be expected by about 4%. In a further group experiment it was found, that even in the case of multiple radiation the procedure of irradiation and measurement was not followed by a significant change in the Ca-content of the hind legs of the testing animals. (orig.) [de

  5. Fabrication of radiation detectors with HgI2 crystals grown from a solution

    International Nuclear Information System (INIS)

    Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

    1979-01-01

    Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

  6. Anomalous effect of high-frequency ultrasound on radiation diffraction in deformed single crystals

    International Nuclear Information System (INIS)

    Iolin, E.M.; Rajtman, Eh.A.; Kuvaldin, B.V.; Zolotoyabko, Eh.V.

    1988-01-01

    Results are presented of a theoretical and experimental study of neutron and X-ray diffraction in defromed single crystals on high-frequency ultrasonic excitation. It is demonstrated theoretically that at a frequency exceeding a certain threshold value the ultrasound violates the adiabatic conditions for the excitation point motion on the dispersion surface branches. This leads to an anomalous (compared to diffraction for a perfect crystal) dependence of the diffraction intensity on the ultrasonic wave amplitude. The experimental data for Si crystals are in good agreement with the theoretical predictions

  7. Application prospects of cadmium-containing crystals based on tungstates and double tungstates

    CERN Document Server

    Nagornaya, L; Apanasenko, A; Tupitsyna, I; Chernikov, V; Vostretsov, V

    2002-01-01

    Tungstate and double tungstate crystals of high scintillation efficiency and detectors based on them are applied widely in the medical imaging and radiation monitoring because of their high sensitivity to the ionizing radiation, small radiation length, high radiation hardness, low afterglow level. In this work a possibility to broaden the application field of CWO crystals have been investigated by improvement of their spectrometric quality and decreasing of their afterglow level. CWO crystals with improved characteristics have been obtained (resolution for sup 1 sup 3 sup 7 Cs <8%, afterglow <0.02% after 20 ms). A possibility is considered to use these crystals for spectrometry of thermal and resonance neutrons, which is possible due to the presence of nuclei with large cross-section for these neutrons in the crystal lattice. Compounds of a new type based on Cd, La-containing double tungstates doped with rare earth elements have been synthesized, and their luminescent characteristics have been studied. ...

  8. Semiconductors Under Ion Radiation: Ultrafast Electron-Ion Dynamics in Perfect Crystals and the Effect of Defects

    Science.gov (United States)

    Lee, Cheng-Wei; Schleife, André

    Stability and safety issues have been challenging difficulties for materials and devices under radiation such as solar panels in outer space. On the other hand, radiation can be utilized to modify materials and increase their performance via focused-ion beam patterning at nano-scale. In order to grasp the underlying processes, further understanding of the radiation-material and radiation-defect interactions is required and inevitably involves the electron-ion dynamics that was traditionally hard to capture. By applying Ehrenfest dynamics based on time-dependent density functional theory, we have been able to perform real-time simulation of electron-ion dynamics in MgO and InP/GaP. By simulating a high-energy proton penetrating the material, the energy gain of electronic system can be interpreted as electronic stopping power and the result is compared to existing data. We also study electronic stopping in the vicinity of defects: for both oxygen vacancy in MgO and interface of InP/GaP superlattice, electronic stopping shows strong dependence on the velocity of the proton. To study the energy transfer from electronic system to lattice, simulations of about 100 femto-seconds are performed and we analyze the difference between Ehrenfest and Born-Oppenheimer molecular dynamics.

  9. The characteristics of CaF2:Tm crystals (TLD-300) irradiated by electromagnetic radiation

    International Nuclear Information System (INIS)

    Ben-Shachar, B.; Yona, S.; Laichter, Y.; German, U.; Weiser, G.

    1985-09-01

    The main characteristics of the CaF 2 :Tm crystals (TLD-300), as a dosimeter, were measured: the glow curve, sensitivity, linearity, fading and energy dependence for photons, and compared to those of LiF (TLD-100) and CaF 2 :Dy (TLD-200). It was found that CaF 2 :Tm can be used for environmental dosimetry by reading the crystals after four days. (Author)

  10. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

    International Nuclear Information System (INIS)

    Lindstroem, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

    2001-01-01

    This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstroem et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail

  11. Solid state radiation chemistry of co-crystallized DNA base pairs studied with EPR and ENDOR

    International Nuclear Information System (INIS)

    Nelson, W.H.; Nimmala, S.; Hole, E.O.; Sagstuen, E.; Close, D.M.

    1995-01-01

    For a number of years, the authors' group has focused on identification of radicals formed from x-irradiation of DNA components by application of EPR and ENDOR spectroscopic techniques to samples in the form of single crystals. With single crystals as samples, it is possible to use the detailed packing and structural information available from x-ray or neutron diffraction reports. This report summarizes results from two crystal systems in which DNA bases are paired by hydrogen bonding. Extensive results are available from one of these, 1-methyl-thymine:9-methyladenine (MTMA), in which the base pairing is the Hoogsteen configuration. Although this configuration is different from that found by Watson-Crick in DNA, nonetheless the hydrogen bond between T(O4) and A(NH 2 ) is present. Although MTMA crystals have been studied previously, the objective was to apply the high-resolution technique of ENDOR to crystals irradiated and studied at temperatures of 10 K or lower in the effort to obtain direct evidence for specific proton transfers. The second system, from which the results are only preliminary, is 9-ethylguanine:1-methyl-5-fluorocytosine (GFC) in which the G:C bases pair is in the Watson Crick configuration. Both crystal systems are anhydrous, so the results include no possible effects from water interactions

  12. Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

    International Nuclear Information System (INIS)

    Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

    1998-01-01

    Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

  13. The studies of radiation distorations in CdS single crystals by using a proton back-scattering method

    International Nuclear Information System (INIS)

    Grigor'ev, A.N.; Dikij, N.P.; Matyash, P.P.; Nikolajchuk, L.I.; Pivovar, L.I.

    1974-01-01

    The radiation defects in semiconducting CdS single crystals induced during doping with 140 keV Na ions (10 15 -2.10 16 ion/cm 2 ) were studied by the orientation dependence of 700 keV proton backscattering. The absence of discrete peaks in the scattered proton eneryg spectra indicates a small contribution of direct scattering at large angles. The defects formed during doping increase the fractionof dechanneled particles, which are then scattered at large anlges. No amorphization of CdS was observed at high Na ion dose 2x10 16 ion/cm 2

  14. Investigations of the coherent hard photon yields from (50-300) GeV/c electrons/positrons in the strong crystalline fields of diamond, Si, and Ge crystals

    CERN Multimedia

    The aim of this experiment is to measure the influence of strong fields on QED-processes like: Emission of coherent radiation and pair-production when multi-hundred GeV electrons/positrons and photons penetrate single crystals near axial/planar directions. The targets will be diamond, Si, Ge and W crystals.\\\\\\\\ QED is a highly developed theory and has been investigated experimentally in great detail. In recent years it has become technically possible to investigate QED-processes in very strong electromagnetic fields around the characteristic strong field E$_{0}$ = m$^{2}$c$^{3}$/eh = 1.32.10$^{16}$ V/cm. The work of such a field over the Compton length equals the electron mass. The theoretical description of QED in such fields is beyond the framework of perturbation theory. Such fields are only obtained in laboratories for a) heavy ion collisions b) interactions of multi-GeV electrons with extremely intense laser fields and in oriented crystals. In fact it turns out that crystals are unique for this type of e...

  15. Application of a mechanistic model for radiation-induced amorphization and crystallization of uranium silicide to recrystallization of UO2

    International Nuclear Information System (INIS)

    Rest, J.

    1996-07-01

    An alternative mechanism for the evolution of recrystallization nuclei is described for a model of irradiation-induced recrystallization of UO 2 wherein the stored energy in the material is concentrated in a network of sinklike nuclei that diminish with dose due to interaction with radiation-produced defects. The sinklike nuclei are identified as cellular dislocation structures that evolve relatively early in the irradiation period. A generalized theory of radiation-induced amorphization and crystallization, developed for intermetallic nuclear materials, is applied to UO 2 . The complicated kinetics involved in the formation of a cellular dislocation network are approximated by the formation and growth of subgrains due to the interaction of shock waves produced by fission- induced damage to the material

  16. Hardness variability in commercial technologies

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Winokur, P.S.; Meisenheimer, T.L.; Sexton, F.W.; Roeske, S.B.; Knoll, M.G.

    1994-01-01

    The radiation hardness of commercial Floating Gate 256K E 2 PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in E 2 PROM hardness were found to depend on bias condition and failure mode (i.e., inability to read or write the memory), as well as the foundry at which the part was manufactured. This variability is related to system requirements, and it is shown that hardness level and variability affect the allowable mode of operation for E 2 PROMs in space applications. The radiation hardness of commercial 1-Mbit CMOS SRAMs from Micron, Hitachi, and Sony irradiated at 147 rad(Si)/s was approximately 12, 13, and 19 krad(Si), respectively. These failure levels appear to be related to increases in leakage current during irradiation. Hardness of SRAMs from each manufacturer varied by less than 20%, but differences between manufacturers are significant. The Qualified Manufacturer's List approach to radiation hardness assurance is suggested as a way to reduce variability and to improve the hardness level of commercial technologies

  17. Crystal growth and thermoluminescence response of NaZr2(PO4)3 at high gamma radiation doses

    International Nuclear Information System (INIS)

    Ordóñez-Regil, E.; Contreras-Ramírez, A.; Fernández-Valverde, S.M.; González-Martínez, P.R.; Carrasco-Ábrego, H.

    2013-01-01

    Graphical abstract: -- Highlights: •NaZr 2 (PO 4 ) 3 exposed to gamma doses of 10, 30 and 50 MGy. •Gamma radiation produced growth of the crystal size of the NZP. •Morphology changes were reversible by heating. •Linear relationship between the thermoluminescence and the applied gamma dose. •This property could be useful for high-level gamma dosimetry. -- Abstract: This work describes the synthesis and characterization of NaZr 2 (PO 4 ) 3 . The stability of this material under high doses of gamma radiation was investigated in the range of 10–50 MGy. Samples of unaltered and gamma irradiated NaZr 2 (PO 4 ) 3 were characterized by X-ray diffraction, infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and thermoluminescence. The results showed that while functional groups were not affected by the gamma irradiation, morphology changes were observed with increasing doses of gamma irradiation. The morphology of the non-irradiated compound is agglomerated flakes; however, irradiation at 10 MGy splits the flakes inducing the formation of well-defined cubes. Gamma irradiation induced the crystal size of the NaZr 2 (PO 4 ) 3 to grow. The heat treatment (973 K) of samples irradiated at 50 MGy resulted in the recovery of the original morphology. Furthermore, the thermoluminescence analysis of the irradiated compound is reported

  18. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    Science.gov (United States)

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  19. Influence of gamma radiation and impurity atoms on the photoconductivity of GeS single crystals

    International Nuclear Information System (INIS)

    Madatov, R.S.; Alekperov, A.S.

    2013-01-01

    Wide opportunities for using of layered semiconductors, particularly in optoelectronics have generated considerable interest to them. Recently it was created the unique device from GeS for the storage of solar energy. The investigated GeS 1 -xNd x S single crystals were grown by the Bridgman method. The samples were irradiated by gamma-quanta and was conducted to install 60Co at room temperature. Irradiation of p-GeS 1 -xNd x S single crystals by small doses of gamma rays increases the photoconductivity on 40%

  20. Crystal structure of core streptavidin determined from multi-wavelength anomalous diffraction of synchrotron radiation

    International Nuclear Information System (INIS)

    Hendrickson, W.A.; Paehler, A.; Smith, J.L.; Satow, Y.; Merritt, E.A.; Phizackerley, R.P.

    1989-01-01

    A three-dimensional crystal structure of the biotin-binding core of streptavidin has been determined at 3.1-angstrom resolution. The structure was analyzed from diffraction data measured at three wavelengths from a single crystal of the selenobiotinyl complex with streptavidin. Streptavidin is a tetramer with subunits arrayed in D 2 symmetry. Each protomer is an 8-stranded β-barrel with simple up-down topology. Biotin molecules are bound at one end of each barrel. This study demonstrates the effectiveness of multi-wavelength anomalous diffraction (MAD) procedures for macromolecular crystallography and provides a basis for detailed study of biotin-avidin interactions