WorldWideScience

Sample records for crystallized ge nanostructures

  1. Magnetic anisotropy of (Ge,Mn) nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jain, A; Jamet, M; Barski, A; Devillers, T; Yu, I-S; Porret, C; Gambarelli, S; Maurel, V; Desfonds, G; Jacquot, J F, E-mail: abhinav.jain@cea.fr [Institut Nanosciences et Cryogenie, CEA-UJF, F-38054, Grenoble (France)

    2011-04-01

    We present a correlation between structural and magnetic properties of different (Ge,Mn) nanostructures grown on Ge(001) and Ge(111) substrates. Thin films of Ge{sub 1-x}Mn{sub x} were grown by low temperature molecular beam epitaxy to favor the out-of-equilibrium growth. Depending on the growth conditions crystalline or amorphous (Ge,Mn) nanocolumns have been observed on Ge(001) substrates. The magnetic properties were probed by superconducting quantum interference device (SQUID), vibrating sample magnetometer (VSM) and electron paramagnetic resonance (EPR). With the help of these complementary techniques (SQUID and EPR), magnetic anisotropy in these nanostructures has been investigated and different anisotropy constants were calculated.

  2. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  3. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

    International Nuclear Information System (INIS)

    Arivanandhan, Mukannan; Gotoh, Raira; Fujiwara, Kozo; Uda, Satoshi; Hayakawa, Yasuhiro

    2015-01-01

    Highlights: • Effective segregation of Ge in B and Ge codoped Czochralski-Si crystal growth was analyzed. • The equilibrium segregation coefficient of Ge was calculated. • The experimentally results were analytically analyzed using partitioning theory. - Abstract: The segregation of Ge in B and Ge codoped Czochralski (CZ)-Si crystal growth was investigated. The concentration of Ge in heavily Ge codoped CZ-Si was measured by electron probe micro analysis (EPMA) and X-ray fluorescence spectroscopy. The effective segregation coefficient of Ge (k eff ) was calculated by fitting the EPMA data to the normal freezing equation, and by taking the logarithmic ratio of the Ge concentrations at the seed and tail of the ingots (top to bottom approach). The k eff of Ge increased from 0.30 to 0.55, when the initial Ge concentration in the Si melt (C L(o) Ge ) was increased from 3 × 10 19 to 3 × 10 21 cm −3 . To avoid cellular growth, the crystal pulling rate was decreased for heavily Ge codoped crystal growth (C L(o) Ge > 3 × 10 20 cm −3 ). The equilibrium segregation coefficient (k 0 ) of Ge was calculated by partitioning theory, and was smaller than the experimentally estimated k eff . The variation of k eff from k 0 was discussed based on Ge clustering in the heavily Ge codoped crystal, which led to changes in the bonding and strain energies caused by the incorporation of Ge into Si

  4. Hyperbolic polaritonic crystals based on nanostructured nanorod metamaterials.

    Science.gov (United States)

    Dickson, Wayne; Beckett, Stephen; McClatchey, Christina; Murphy, Antony; O'Connor, Daniel; Wurtz, Gregory A; Pollard, Robert; Zayats, Anatoly V

    2015-10-21

    Surface plasmon polaritons usually exist on a few suitable plasmonic materials; however, nanostructured plasmonic metamaterials allow a much broader range of optical properties to be designed. Here, bottom-up and top-down nanostructuring are combined, creating hyperbolic metamaterial-based photonic crystals termed hyperbolic polaritonic crystals, allowing free-space access to the high spatial frequency modes supported by these metamaterials. © 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Lyotropic liquid crystal directed synthesis of nanostructured materials

    Directory of Open Access Journals (Sweden)

    Cuiqing Wang, Dairong Chen and Xiuling Jiao

    2009-01-01

    Full Text Available This review introduces and summarizes lyotropic liquid crystal (LLC directed syntheses of nanostructured materials consisting of porous nanostructures and zero-dimensional (0-D, one-dimensional (1-D and two-dimensional (2-D nanostructures. After a brief introduction to the liquid crystals, the LLCs used to prepare mesoporous materials are discussed; in particular, recent advances in controlling mesostructures are summarized. The LLC templates directing the syntheses of nanoparticles, nanorods, nanowires and nanoplates are also presented. Finally, future development in this field is discussed.

  6. Facile synthesis and enhanced visible-light photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jin [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); The Key Laboratory of Rare Earth Functional Materials and Applications, Zhoukou Normal University, Zhoukou 466001 (China); Zhang, Gaoke, E-mail: gkzhang@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China)

    2015-03-15

    Graphical abstract: - Highlights: • Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were synthesized by a facile method. • The formation mechanism for the Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated. • The catalyst exhibited an enhanced visible-light photocatalytic activity. • The reactive species in the photocatalytic process were studied. - Abstract: Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were successfully synthesized by a one-step and low-temperature route under ambient pressure. The micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres have a diameter of 1–2 μm and their shells are composed of numerous nanoparticles and nanorods. The growth process of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated in detail. The results indicated that the morphologies and composition of Ag{sub 2}ZnGeO{sub 4} samples were strongly dependent on the dose of the AgNO{sub 3} and reaction time. Excessive AgNO{sub 3} was favorable for the nucleation and growth rate of Ag{sub 2}ZnGeO{sub 4} crystals and the formation of pure Ag{sub 2}ZnGeO{sub 4}. Moreover, the formation mechanism of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is related to the Ostwald ripening. Under the same conditions, the photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is about 1.7 times and 11 times higher than that of bulk Ag{sub 2}ZnGeO{sub 4} and Degussa P25, respectively. These interesting findings could provide new insight on the synthesis of micro/nanostructured ternary-metal oxides with enhanced photocatalytic activity.

  7. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  8. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    We have deposited relatively thick (∼ 60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski–Krastanov growth mode observed in epitaxial growth. Both the islands ...

  9. Green laser crystallization of GeSi thin films

    NARCIS (Netherlands)

    Rangarajan, B.; Brunets, I.; Oesterlin, Peter; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray

  10. Steering of sub-GeV electrons by ultrashort Si and Ge bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sytov, A.I. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; INFN Sezione di Ferrara (Italy); Bandiera, L.; Mazzolari, A.; Bagli, E.; Germogli, G.; Guidi, V.; Romagnoni, M. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN Sezione di Ferrara (Italy); De Salvador, D.; Carturan, S.; Maggioni, G. [INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; Berra, A.; Prest, M. [Univ. dell' Insubria, Como (Italy); INFN, Sezione di Milano Bicocca, Milan (Italy); Durighello, C. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; INFN Sezione di Ferrara (Italy); Klag, P.; Lauth, W. [Mainz Univ. (Germany). Inst. fuer Kernphysik; Tikhomirov, V.V. [Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; Vallazza, E. [INFN, Sezione di Trieste (Italy)

    2017-12-15

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μm of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals. (orig.)

  11. Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

    Science.gov (United States)

    Sytov, A. I.; Bandiera, L.; De Salvador, D.; Mazzolari, A.; Bagli, E.; Berra, A.; Carturan, S.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Prest, M.; Romagnoni, M.; Tikhomirov, V. V.; Vallazza, E.

    2017-12-01

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μ m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.

  12. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    strates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski–Krastanov growth mode ob- served in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of ...

  13. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

    Science.gov (United States)

    Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

    2018-01-01

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  14. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys.

    Science.gov (United States)

    Herlach, Dieter M; Simons, Daniel; Pichon, Pierre-Yves

    2018-02-28

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge 100- x Si x ( x  = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth.This article is part of the theme issue 'From atomistic interfaces to dendritic patterns'. © 2018 The Author(s).

  15. Double stage crystallization of bulk Ge20Te80 glass

    International Nuclear Information System (INIS)

    Parthasarathy, G.; Bandyopadhyay, A.K.; Gopal, E.S.R.; Subbanna, G.N.

    1984-01-01

    The growing interest of the semiconducting glasses is partly because of their interesting electrical and optical properties. These properties are usually connected with their crystallization. In many glasses, the glass-supercooled liquid transition precedes crystallization. The glass transition temperature (Tsub(g)) is found to exhibit multistage processes for a few systems. In this communication, we report the observation of a double Tsub(g) effect in bulk Ge 20 Te 80 glass and also explain the structural changes taking place in the two stages. (author)

  16. Transport of ions and electrons in nanostructured liquid crystals

    Science.gov (United States)

    Kato, Takashi; Yoshio, Masafumi; Ichikawa, Takahiro; Soberats, Bartolome; Ohno, Hiroyuki; Funahashi, Masahiro

    2017-03-01

    The nanosegregated structures of columnar, smectic and bicontinuous cubic liquid crystals can provide well-organized, nano- and sub-nanosized 1D, 2D and 3D channels capable of ion and electron transport. The molecular shape, intermolecular interactions and nanosegregation of the molecular structures can influence their self-assembly into a range of functional liquid-crystalline nanostructures. The formation of stable and soft liquid-crystalline materials leads to their application as electrolytes for batteries and photovoltaics, semiconductors, electroluminescence and electrochemical devices. In addition, electrochemical devices are obtained by using redox-active liquid crystals. In this Review, we focus on the design of liquid-crystalline phases, the resultant self-assembled structures, the transport mechanisms, and the fabrication, function and future development of devices incorporating nanostructured liquid crystals.

  17. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  18. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  19. Photonic crystal nanostructures for optical biosensing applications

    DEFF Research Database (Denmark)

    Dorfner, D.; Zabel, T.; Hürlimann, T.

    2009-01-01

    We present the design, fabrication and optical investigation of photonic crystal (PhC) nanocavity drop filters for use as optical biosensors. The resonant cavity mode wavelength and Q-factor are studied as a function of the ambient refractive index and as a function of adsorbed proteins (bovine...

  20. Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xuan [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Materials, Nanjing University, Nanjing 210093 (China); Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Ahmadi-Majlan, K.; Ngai, Joseph H. [Department of Physics, University of Texas at Arlington, 502 Yates Street, Arlington, Texas 76019 (United States); Wu, Di [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Materials, Nanjing University, Nanjing 210093 (China); Su, Dong, E-mail: dsu@bnl.gov [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2015-01-19

    We investigated the interfacial structure of hetero-epitaxial SrZr{sub 0.68}Ti{sub 0.32}O{sub 3} thin film deposited on (001) Ge single crystal via transmission electron microscopy (TEM). The results from high-resolution scanning TEM and electron energy-loss spectroscopy show an atomically abrupt interface without secondary phase. We found misfit dislocations with Burgers vector of 1/2a 〈111〉 and threading dislocations with Burgers vector of a 〈100〉. Furthermore, we observed the coupling between dislocation half-loop and anti-phase boundary induced by the lattice terrace of Ge along 〈100〉 direction and their decoupling after annealing. We proposed models based on half-loop theory to interpret the coupling and the dislocation reactions.

  1. Diamond turning of Si and Ge single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  2. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  3. Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles

    Science.gov (United States)

    Chen, Bin; Ten Brink, Gert H.; Palasantzas, George; Kooi, Bart J.

    2016-12-01

    Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in damage and deterioration of their useful properties. Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes. Here we unprecedentedly present the size dependence of crystallization for Ge2Sb2Te5 (GST) NPs, whose production is currently highly challenging for chemical synthesis or top-down fabrication. Both amorphous and crystalline NPs have been produced with excellent size and composition control with average diameters varying between 8 and 17 nm. The size-dependent crystallization of these NPs was carefully analyzed through in-situ heating in a transmission electron microscope, where the crystallization temperatures (Tc) decrease when the NPs become smaller. Moreover, methane incorporation has been observed as an effective method to enhance the amorphous phase stability of the NPs. This work therefore elucidates that GST NPs synthesized by gas-phase condensation with tailored properties are promising alternatives in designing phase-change memories constrained by optical lithography limitations.

  4. Nanoscience with liquid crystals from self-organized nanostructures to applications

    CERN Document Server

    Li, Quan

    2014-01-01

    This book focuses on the exciting topic of nanoscience with liquid crystals: from self-organized nanostructures to applications. The elegant self-organized liquid crystalline nanostructures, the synergetic characteristics of liquid crystals and nanoparticles, liquid crystalline nanomaterials, synthesis of nanomaterials using liquid crystals as templates, nanoconfinement and nanoparticles of liquid crystals are covered and discussed, and the prospect of fabricating functional materials is highlighted. Contributions, collecting the scattered literature of the field from leading and active player

  5. Bridgman growth and defects of Nd : Sr3Ga2Ge4O14 laser crystals

    Indian Academy of Sciences (India)

    Unknown

    Nd3+ : SGG crystal; Bridgman method; EPMA; inclusion; dislocation. 1. Introduction. Ca-gallogermanate (Ca3Ga2Ge4O14) type laser crystals have attracted much attention due to their disordered structure. Sr3Ga2Ge4O14 (SGG) is one of Ca-gallogermanate type crystals with a = 8⋅270(3) Å, c = 5⋅040(1) Å, α = β = 90°,.

  6. Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

    Science.gov (United States)

    Shih, Grace Hwei-Pyng

    Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

  7. Far infrared spectroscopy of Ge film deposited on a piece of Si wafer and single crystal Ge

    International Nuclear Information System (INIS)

    Roslan, M.; Ibrahim, K.; Wan Abdullah, A.K.

    1991-01-01

    The far infrared spectrum of thin polycrystalline film of Ge of approximately 10 μm deposited on a piece of Si wafer (99.99% purity) has been obtained using the far infrared Fourier transform spectroscopy system developed recently in our laboratory. The spectrum of Ge film from 180 to 480 cm -1 obtained after rationing against Si wafer spectrum at a resolution of about 1 cm -1 has been obtained. It is interesting to note that this thin film of Ge is extremely transparent to radiation in this region and phonon absorption processes as reported previously could not be observed due to thinness of the film. The spectrum of a single crystal of Ge (99.9% purity) and Ge-doped Li have revealed several absorption bands which we have assigned as due to 2-phonon and 3-phonon processes in Ge. The bands at 195, 273 and 287 cm -1 could not be assigned as phonon processes and at present we do not know the causes of these absorption bands

  8. Simulation of CdTe:Ge crystal properties for nuclear radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sochinskii, N.V. [Instituto de Microelectronica de Madrid, CNM-CSIC, c/Isaac Newton 8 (PTM), Tres Cantos 28760, Madrid (Spain)]. E-mail: ms@imm.cnm.csic.es; Lozano, M. [Instituto de Microelectronica de Barcelona, CNM-CSIC, Campus UAB, Bellaterra 08193, Barcelona (Spain); Pellegrini, G. [Instituto de Fisica de Altas Energias, Campus UAB, Bellaterra 08193, Barcelona (Spain); Ullan, M. [Instituto de Microelectronica de Barcelona, CNM-CSIC, Campus UAB, Bellaterra 08193, Barcelona (Spain)

    2006-11-30

    We report on the simulation results of the electrical properties of a coplanar detector made from Ge-doped CdTe crystals. The simulations have been performed using the commercial modeling package MEDICI. The detailed models of material behavior have been created by varying the concentration of three standard traps associated with CdTe:Ge crystals. These traps are the A-center related to Cd vacancy-residual impurity complex, the Te vacancy defect and the Ge impurity. Their energetic positions were measured by photoluminescence technique. The simulation has revealed the effects of the traps on several important detector characteristics such as leakage current and electric field distribution.

  9. Simulation of CdTe:Ge crystal properties for nuclear radiation detectors

    International Nuclear Information System (INIS)

    Sochinskii, N.V.; Lozano, M.; Pellegrini, G.; Ullan, M.

    2006-01-01

    We report on the simulation results of the electrical properties of a coplanar detector made from Ge-doped CdTe crystals. The simulations have been performed using the commercial modeling package MEDICI. The detailed models of material behavior have been created by varying the concentration of three standard traps associated with CdTe:Ge crystals. These traps are the A-center related to Cd vacancy-residual impurity complex, the Te vacancy defect and the Ge impurity. Their energetic positions were measured by photoluminescence technique. The simulation has revealed the effects of the traps on several important detector characteristics such as leakage current and electric field distribution

  10. Piezoelectric properties of Sr3 Ga2 Ge4 single crystals

    Indian Academy of Sciences (India)

    TECS

    Abstract. A new piezoelectric single crystal, Sr3Ga2Ge4O14 (SGG), has been grown successfully by the verti- cal Bridgman method with crucible-sealing technique. SGG crystal up to 2″ in diameter has been obtained. The relative dielectric constants, the piezoelectric strain constants, elastic compliance constants and ...

  11. Experimental study of pair creation and radiation in Ge crystals at ultrarelativistic energies (30-200 GeV)

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; IN2P3); Bologna, G.; IN2P3)

    1986-04-01

    The aim of this paper is to present and discuss recent studies performed at CERN (NA 33 collaboration) on the pair creation rate of high energy photons and on the radiation of high energy electrons and positrons in germanium crystals. Our previous measurements have already been published 11-13 . We observed that the pair production rate for photons aligned with the axial direction of a Ge crystal increases rapidly with energy, in good agreement with the theoretical predictions, and the study of the tilt angle dependence shows that the process does not depend on whether the created charged particles are channeled or not

  12. Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

    Directory of Open Access Journals (Sweden)

    G. Recio-Sánchez

    2012-01-01

    Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

  13. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  14. ZnGeP sub 2 crystals for infrared laser radiation frequency conversion

    CERN Document Server

    Andreev, Y M; Gribenyukov, A I; Korotkova, V V

    1998-01-01

    In this parer, we present some recent results on integrated studies concerned with different aspects of ZnGeP sub 2 crystal technology: synthesis, growth, and post-growth treatment. High-yield two-temperature synthesis and subsequent growth of ZnGeP sub 2 crystals are considered. By X-Ray phase analysis it has been found that two-temperature synthesis of ZnGeP sub 2 is realized through binary zinc and germanium phosphides formed at the Zn-Ge mixture temperature of about 900 .deg. C and the P pressure of 7 approx 10 atm. Using the heat-balance equation, a ratio of the thermal conductivity in the solid to that in the liquid ZnGeP sub 2 near the melting point has been determined. The value of the determined ratio is K sub l /K sub s approx =2.3. Analysis of the most favored crystallographic directions for ZnGeP sub 2 growth has been performed. These directions are [116], [132] and [102]. Data for optical absorption of the as-grown and the annealed ZnGeP sub 2 crystals are also presented.

  15. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    Energy Technology Data Exchange (ETDEWEB)

    Maeta, Takahiro [Graduate School of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197 (Japan); Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  16. In-situ crystallization of GeTeGaSb phase change memory stacked films

    Science.gov (United States)

    Velea, A.; Borca, C. N.; Socol, G.; Galca, A. C.; Grolimund, D.; Popescu, M.; van Bokhoven, J. A.

    2014-12-01

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  17. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

    International Nuclear Information System (INIS)

    Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

    2014-01-01

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

  18. One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

    International Nuclear Information System (INIS)

    Liu, Ziheng; Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A.

    2014-01-01

    In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells

  19. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pezzoli, Fabio, E-mail: fabio.pezzoli@unimib.it; Giorgioni, Anna; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Miglio, Leo [LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Gallacher, Kevin; Millar, Ross W.; Paul, Douglas J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Isa, Fabio [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Biagioni, Paolo [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Isella, Giovanni [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy)

    2016-06-27

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO{sub 2} in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  20. High-field magnetization of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  1. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ramalingam, Gopalakrishnan; Floro, Jerrold A.; Reinke, Petra, E-mail: pr6e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2016-05-28

    The annealing of sub-critical Ge wetting layers (WL < 3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 °C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening during annealing at T < 460 °C when vacancy lines and the 2xn reconstruction are observed. The metastable Ge WL then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: first, the hillocks, with a wedding cake-type structure where the step edges run parallel to the 〈110〉 direction, are formed from thin wetting layers, while {105}-faceted structures, called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between the hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system.

  2. Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

    Science.gov (United States)

    Khulbe, Pramod K.; Hurst, Terril; Horie, Michikazu; Mansuripur, Masud

    2002-10-01

    We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films.

  3. The electronic transport properties of zigzag phosphorene-like MX (M = Ge/Sn, X = S/Se) nanostructures.

    Science.gov (United States)

    Zhang, Mengjun; An, Yipeng; Sun, Yongqiang; Wu, Dapeng; Chen, Xuenian; Wang, Tianxing; Xu, Guoliang; Wang, Kun

    2017-07-05

    Single-layer phosphorene-like MX sheets have aroused new interest and could become a family of nanomaterials in physics and materials science. Using a first-principles method combined with non-equilibrium Green's function (NEGF) theory, we study the electronic transport properties of the zigzag phosphorene-like MX (M = Ge/Sn, X = S/Se) nanostructures. The results demonstrate that GeS and GeSe nanoribbons display very similar electronic transport properties. Their current-voltage (I-V) curves exhibit an interesting negative differential resistive (NDR) effect and are insensitive to their ribbon widths due to their similar band structures. However, for SnS and SnSe nanoribbons, their electronic transport properties are obviously dependent on their ribbon widths due to their different band structures. Most of the SnS nanoribbons display the current-limited effect. SnSe nanoribbons could also present a NDR effect, which appeared at a lower applied bias. The currents mainly propagate through the phosphorene-like MX nanoribbons along the metal-termination, while little along the S/Se-termination. Moreover, their two-dimensional monolayers present an obvious difference from their one-dimensional structures. These phosphorene-like MX nanostructures have potential applications in nanoelectronics, and could become candidates for nanodevices, such as NDR devices.

  4. 70 GeV proton volume capture into channeling mode with a bent Si single crystal

    International Nuclear Information System (INIS)

    Chesnokov, Yu.A.; Galyaev, N.A.; Kotov, V.I.; Tsarik, S.V.; Zapol'skij, V.N.

    1990-01-01

    The existence of the volume capture of 70 GeV protons with a Si bent single crystal of (111) orientation into the channeling mode gas experimentally been proved. The data on the probability of capturing protons into the channeling mode versus the bending radius of the crystal have been obtained together with the information on the dynamics of volume captured particle dechanneling. 10 refs

  5. Fabricating colloidal crystals and construction of ordered nanostructures

    Directory of Open Access Journals (Sweden)

    Sun Zhiqiang

    2006-01-01

    Full Text Available AbstractColloidal crystals of polymeric or inorganic microspheres are of extensive interest due to their potential applications in such as sensing, optics, photonic bandgap and surface patterning. The article highlights a set of approaches developed in our group, which are efficient to prepare colloidal crystals with ordered voids, patterned colloidal crystals on non-planar surfaces, heterogeneous colloidal crystals of different building blocks, colloidal crystals composed of non-spherical polyhedrons, and colloidal crystals of non-close-packed colloidal microspheres in particular. The use of these colloidal crystals as templates for different microstructures range from nanoscale to micron-scale is also summarized.

  6. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0crystallization of amorphous Si{sub 1-x}Ge{sub x} thin films with 0.3Ge samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0crystallization method and Ge content. The defect density for solid-phase crystallized SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  7. Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO{sub 3}(001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bischoff, Jean-Luc; Mortada, Hussein; Dentel, Didier; Derivaz, Mickael [Institut de Science des Materiaux de Mulhouse (IS2M), LRC 7228 CNRS-UHA, Universite de Haute Alsace, Mulhouse (France); Ben Azzouz, Chiraz; Akremi, Abdelwahab; Chefi, Chaabanne [Equipe Surface et Interface (ESI) - Faculte des Sciences, Bizerte (Tunisia); Morales, Francisco Miguel; Herrera, Miriam; Manuel, Jose Manuel; Garcia, Rafael [Department of Materials Science, Metallurgical Engineering and Inorganic Chemistry, Cadiz University (Spain); Diani, Mustapha [Equipe de Recherche en Mecanique, Materiaux et Metallurgie, FST, Tanger (Morocco)

    2012-04-15

    We present a comparative structural study of the growth of Si and Ge deposited by molecular beam epitaxy (MBE) on a c(2 x 2) reconstructed LaAlO{sub 3}(001) substrate. Our findings are based on complementary experimental techniques such as in situ X-ray photoelectron spectroscopy (XPS), reflection high-energy electron diffraction (RHEED), low energy electron diffraction (LEED) and ex situ atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). While the layers are amorphous and wet uniformly the substrate in a low deposition temperature range, above 500 C both Si and Ge growths proceed in a Volmer-Weber (VW) mode leading to the formation of nanocrystals (NCs). The islands are found to be composed of pure Si and Ge and to have abrupt interfaces with the substrate. Both semiconductors (SCs) crystallize in their own diamond structure leading to relaxed NCs. No facets could be observed on the crystalline islands. An epitaxial relationship is established for which the (001) planes of Si and Ge are parallel to the LaAlO{sub 3}(001) surface but are rotated by 45 around the [001] growth axis. The Ge lattice undergoes a second rotation of 6 with respect to the (001) growth axis. This 6 tilt is an original mechanism to partially compensate the strain in the Ge islands induced by the large misfit. Whereas a unique epitaxial relationship is pointed out for Si NCs, many Ge NCs are randomly orientated on the surface. This is interpreted by the fact that the Ge islands are less anchored to the substrate due to a large misfit and to the fact that the Ge-O bonds are weaker than the Si-O ones. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Antiferromagnetic transition in EuCu sub 2 Ge sub 2 single crystals

    CERN Document Server

    Hossain, Z; Yuan, H Q; Sparn, G

    2003-01-01

    Single crystals of EuCu sub 2 Ge sub 2 were grown and characterized using electrical resistivity, magnetization, specific heat and magnetoresistance measurements. The crystals exhibit antiferromagnetic transitions at T sub N sub 1 = 9 K and T sub N sub 2 = 5 K. The T sub N of the flux-grown single crystals reported here are lower than that reported for the polycrystalline sample (T sub N = 13 K) in the literature (Felner and Nowik 1978 J. Phys. Chem. Solids 39 763). The magnetoresistance is positive in the ordered state and negative in the paramagnetic state. The magnetic order could not be suppressed up to a pressure of 25 kbar.

  9. Crystal growth of K2TiGe3O9 in the glass

    Directory of Open Access Journals (Sweden)

    Grujić Snežana R.

    2010-01-01

    Full Text Available The kinetics and mechanism of isothermal crystal growth of K2TiGe3O9 from a glass of the same stoichiometric composition were studied. The crystal growth rate U = 1 x 10-11-1.27 x 10-10 m s-1 was experimentally determined in the temperature interval of t = 540-600°C. In the range of high undercooling, Δt=435-375°C, spherical crystals growing at (374 ± 19 kJ mol-1 was observed.

  10. Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Sakiyama, Shin; Kaneko, Takahiro; Ootsubo, Takanobu; Sakai, Takatsugu; Nakashima, Kazutoshi; Moto, Kenta; Yoneoka, Masashi; Takakura, Kenichiro; Tsunoda, Isao, E-mail: isao_tsunoda@kumamoto-nct.ac.jp

    2014-04-30

    We have investigated the low temperature of Au induced lateral crystallization of electron irradiated amorphous Ge on SiO{sub 2}/Si substrate. The reduction of the critical annealing time to cause the Au induced lateral crystallization is realized by high energy electron irradiation. In addition, the lateral crystallization region of the sample with electron irradiation has high crystalline quality as well as the sample without electron irradiation. We have speculated that the Au induced lateral crystallization of amorphous Ge on SiO{sub 2}/Si substrate was enhanced by electron irradiation, due to the introduction of point defects into amorphous Ge able to diffuse easily of Au atoms. - Highlights: • Au induced lateral crystallization of electron irradiated Ge is investigated. • Crystallization annealing time is significantly reduced. • High crystalline quality of lateral region was not changed by electron irradiation.

  11. Time-resolved reflection and transmission studies of amorphous Ge-Te thin-film crystallization

    Science.gov (United States)

    Libera, M.; Chen, M.

    1993-03-01

    Measurements of the temperature and time dependence of visible diode laser transmission and reflection are combined with transmission electron microscopy (TEM) to study the crystallization of two 75 nm Ge-Te thin films. Near-stoichiometric Ge48Te52 transforms by the rapid growth of crystals through the film thickness followed by 2D growth in the film plane. Changes in film reflection and transmission are directly related to the volume fraction transformed. The optical measurements are interpreted in terms of classical Johnson-Mehl-Avrami kinetics. A Kissinger analysis gives an activation energy for crystallization of 1.7 eV. Isothermal measurements lead to an Avrami exponent of 4.5. The data are modeled using a numerical temperature-dependent expression developed by Greer [Acta Metall. 30, 171 (1982)]. Off-stoichiometric Ge54Te46 films show markedly different crystallization behavior. Transmission and reflection measurements indicate that the transformation proceeds by rapid growth of a crystalline layer at the free surface of the film followed by 1D growth of this layer through the film. The observation is confirmed by TEM imaging and diffraction. This work shows that reflection and transmission measurements can be an effective method for the study of crystallization kinetics of amorphous thin films, particularly when more traditional calorimetric methods cannot be employed.

  12. NO2 gas sorption studies of Ge33Se67 films using quartz crystal microbalance

    International Nuclear Information System (INIS)

    Georgieva, Velichka; Mitkova, Maria; Chen, Ping; Tenne, Dmitri; Wolf, Kasandra; Gadjanova, Victoria

    2012-01-01

    A study on the NO 2 gas sorption ability of amorphous Ge 33 Se 67 coated quartz crystal microbalance (QCM) is presented. The thin films have been characterized before and after sorption/desorption processes of NO 2 by energy-dispersive X-ray spectroscopy (EDS), grazing angle X-ray diffraction (GAXRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atom force microscopy (AFM) measurements. These studies indicated that physisorption occurs when NO 2 gas molecules are introduced into the chalcogenide film and the thin film composition or structure do not change. The mass loading due to NO 2 gas sorption was calculated by the resonator’s frequency shift. At the conditions of our experiment, up to 6.8 ng of the gas was sorbed into 200 nm thick Ge 33 Se 67 film at 5000 ppm NO 2 concentration. It has been established that the process of gas molecules sorption is reversible. Highlights: ► Ge 33 Se 67 thin film and quartz crystal microbalance for NO 2 gas sensing. ► Physisorption of NO 2 in Ge 33 Se 67 thin films. ► Reversibility of the NO 2 sorption in Ge 33 Se 67 thin films. ► Pure physical effect of gas sorption revealed by Raman, XPS, AFM. ► Large free volume of the thin films encountered through GAXRD.

  13. The Ag2Se-HgSe-GeSe2 system and crystal structures of the compounds

    International Nuclear Information System (INIS)

    Parasyuk, O.V.; Gulay, L.D.; Romanyuk, Ya.E.; Olekseyuk, I.D.; Piskach, L.V.

    2003-01-01

    The phase diagram of the quasi-ternary Ag 2 Se-HgSe-GeSe 2 system at 298 K was investigated using X-ray phase analysis and metallography. The formation of five intermediate quaternary phases β (Ag ∼7.12-∼6.32 Hg ∼0.44-∼0.82 GeSe 6 ), γ (Ag ∼6.08-∼4.00 Hg ∼0.96-∼2.00 GeSe 6 ), δ (Ag 3.4 Hg 2.3 GeSe 6 ), ε (Ag ∼2.24-∼2.00 Hg ∼2.88-∼3.00 GeSe 6 ) and ∼Ag 1.4 Hg 1.3 GeSe 6 was established. The crystal structure of the β-phase (for the Ag 6.504 Hg 0.912 GeSe 6 composition) was determined using X-ray single crystal diffraction. It crystallizes in a cubic structure (space group F4-bar 3m) with the lattice parameter a=1.09026(4) nm. The crystal structure of the δ-phase (Ag 3.4 Hg 2.3 GeSe 6 ) was determined using X-ray powder diffraction (space group F4-bar 3m, a=1.07767(8) nm). The crystal structure determination of the γ-phase (space group Pmn2 1 ) was performed for the compositions Ag 5.6 Hg 1.2 GeSe 6 , Ag 4.8 Hg 1.6 GeSe 6 and Ag 4 Hg 2 GeSe 6 using X-ray powder diffraction. The crystal structure of the LT-Hg 2 GeSe 4 compound (space group I4-bar , a=0.56786(2), c=1.12579(5) nm) was confirmed by powder diffraction also.

  14. Deflection of GeV particle beams by channeling in bent crystal planes of constant curvature

    International Nuclear Information System (INIS)

    Forster, J.S.; Hatton, H.; Toone, R.J.

    1989-01-01

    The deflection of charged particle beams moving within the (110) planes of a 43 mm long silicon crystal has been observed for momenta from 60 to 200 GeV/c. The crystal was bent by a 10.8 μm thick coating of ZnO along the central 26 mm of the crystal. Measurements were made with the crystal at room temperature, where a total deflection of 32.5 mrad was observed, and with the crystal cooled to -145 o C, where a 30.9 mrad deflection was observed. The ratio of the number of particles that dechannel upon entering the bend to the number of initially channeled particles compares well with calculations based on the continuum model. (author)

  15. Ge incorporated epitaxy of (110) rutile TiO{sub 2} on (100) Ge single crystal at low temperature by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, Takahiro, E-mail: NAGATA.Takahiro@nims.go.jp [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); JST, PREST, 4-1-8 Honcho, Kawaguchi, Saitama 332–0012 (Japan); Kobashi, Kazuyoshi [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214–8571 (Japan); Yamashita, Yoshiyuki [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Koto, Sayo-cho, Sayo, Hyogo 679–5148 (Japan); Yoshikawa, Hideki [Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Koto, Sayo-cho, Sayo, Hyogo 679–5148 (Japan); Paulsamy, Chinnamuthu [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); Suzuki, Yoshihisa [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214–8571 (Japan); Nabatame, Toshihide [Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1–1 Namiki, Tsukuba, Ibaraki 305–0044 (Japan); Ogura, Atsushi [Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214–8571 (Japan); and others

    2015-09-30

    The thin film growth of (110) rutile TiO{sub 2} on a (100) Ge substrate at a substrate temperature of 450 °C, which is generally the growth temperature of anatase TiO{sub 2}, was demonstrated by using pulsed laser deposition. X-ray diffraction and X-ray photoelectron spectroscopy revealed that the incorporation of Ge into TiO{sub 2} enhances the rutile phase formation, and the ambient oxygen condition enhances the Ge oxide diffusion. Photoelectron spectroscopy also revealed that the valence band offset of rutile TiO{sub 2} and p-type Ge is approximately 2.5 ± 0.1 eV with a type II band alignment. - Highlights: • We grew (110) rutile TiO{sub 2} film on (100) Ge substrate. • Rutile TiO{sub 2} crystallizes at the crystallization temperature of anatase phase. • Ge diffusion enhances the crystallization of rutile TiO{sub 2}. • Band alignment between rutile TiO{sub 2} and p-type Ge is type II band alignment.

  16. Straw man 900-1000 GeV crystal extraction test beam for Fermilab collider operation

    International Nuclear Information System (INIS)

    Carrigan, R.A. Jr.

    1996-10-01

    A design for a 900-1000 GeV, 100 khz parasitic test beam for use during collider operations has been developed. The beam makes use of two bent crystals, one for extraction and the other one for redirecting the beam in to the present Switchyard beam system. The beam requires only a few modifications in the A0 area and largely uses existing devices. It should be straight-forward to modify one or two beam lines in the fixed target experimental areas to work above 800 GeV. Possibilities for improvements to the design,to operate at higher fluxes are discussed

  17. Evolution of the Shape of Detached GeSi Crystals in Microgravity

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. An objective of these experiments is to understand the mechanisms of detached Bridgman growth, a process in which a gap exists between the growing semiconductor crystal and the crucible wall. Crystals grown without wall contact have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus.

  18. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...

  19. Fiber Bragg grating inscription in pure-silica and Ge-doped photonic crystal fibers.

    Science.gov (United States)

    Wang, Yiping; Bartelt, Hartmut; Becker, Martin; Brueckner, Sven; Bergmann, Joachim; Kobelke, Jens; Rothhardt, Manfred

    2009-04-10

    We report on fiber Bragg gratings (FBGs) inscribed in pure-silica and Ge-doped photonic crystal fibers (PCFs) with a two-beam interference technique and a femtosecond or excimer laser. Such a technique enables the inscription of FBGs for different Bragg wavelengths with high flexibility. Effects of H(2)-loading and Ge doping on the efficiency of grating inscription were investigated by measuring the development of Bragg wavelength and attenuation in the transmission spectra with an increased exposure dose. H(2)-loading dramatically enhances the laser-induced index modulation not only in Ge-doped PCFs but also in pure-silica PCFs. We observed a reversible Bragg wavelength shift during femtosecond pulse irradiation, which indicates an internal temperature rise of approximately 77 degrees C.

  20. Magnetic excitations in single crystals of Cu1-xNixGeO3

    DEFF Research Database (Denmark)

    Coad, S.; Petrenko, O.; Paul, D.M.

    1997-01-01

    V, while approximate doubling of the dopant concentration to 3.2% results in an almost complete collapse of this excitation. Instead, measurements on the 3.2% Ni-doped crystal revealed a magnetic excitation that could be clearly resolved from the elastic magnetic peak. This excitation followed......We have studied magnetic excitations in two single crystals of CuGeO3 doped with Ni2+, using inelastic neutron scattering at wave vectors close to the antiferromagnetic zone centre, Q=(0,1,1/2). Pure CuGeO3 is a one-dimensional compound with a spin-Peierls (S-P) gap of approximate to 1.95 meV. When...

  1. Crystallization kinetics of Ge{sub 20}Te{sub 80} chalcogenide glasses doped with

    Energy Technology Data Exchange (ETDEWEB)

    Ziani, N. [Departement de physique, faculte des Sciences, universite des sciences et de la technologie d' oran, USTO BP1505, elm' naouar oran algerie, Oran (Algeria)]. E-mail: ziani_nossair@yahoo.fr; Belhadji, M. [Faculte des sciences, Universite Essenia Oran (Algeria)]. E-mail: nmaamar@yahoo.fr; Heireche, L. [Faculte des sciences, Universite Essenia Oran (Algeria); Bouchaour, Z. [Faculte des sciences, Universite Essenia Oran (Algeria); Belbachir, M. [Faculte des sciences, Universite Essenia Oran (Algeria)

    2005-04-15

    A study of kinetics of non-isothermal crystallization process for Ge{sub 20-x}Te{sub 80}Sb{sub x}(x=0,3,4,5) system was reported and interpreted in this work by using Matusita's model. From the differential scanning calorimetry (DSC) traces obtained under dynamic conditions, the activation energy of growth process and values of n and m which are numerical factors depending on crystallization mechanisms are evaluated. The validity of Matusita's model was ascertained by comparison with the results obtained by application of two well-known methods which are Ozawa and Kissinger ones.

  2. Single Crystal Growth and Magnetic Properties of Ferromagnetic URhGe2

    International Nuclear Information System (INIS)

    Matsuda, T.D.; Haga, Y.; Tokiwa, Y.; Galatanu, A.; Yamamoto, E.; Okubo, T.; Onuki, Y.

    2003-01-01

    We have successfully grown a single crystal of uranium intermetallic compound URhGe 2 . The temperature dependence of electrical resistivity shows highly anisotropic behavior. Two anomalies, which correspond to the magnetic ordering temperatures, were observed in the resistivity, magnetic susceptibility and specific heat measurements at T M1 30 K and T M2 =25 K. The magnetic susceptibility also shows a large uniaxial anisotropy with a magnetic easy-axis along the [010] direction. (author)

  3. Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

    International Nuclear Information System (INIS)

    Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

    2008-01-01

    Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

  4. Nondestructive in situ identification of crystal orientation of anisotropic ZnO nanostructures.

    Science.gov (United States)

    Singamaneni, Srikanth; Gupta, Maneesh; Yang, Rusen; Tomczak, Melanie M; Naik, Rajesh R; Wang, Zhong L; Tsukruk, Vladimir V

    2009-09-22

    We present a novel method for direct, fast, nonambiguous, and nondestructive identification of the growth direction and orientation of individual ZnO nanostructures in the device-ready environment by exploiting high-resolution confocal Raman mapping. Various features of the Raman spectrum of ZnO nanostructures, vapor deposition grown nanobelts and peptide-assisted vertical nanorods, were found to be sensitive to the relative orientation of the crystal plane. Furthermore, we discovered that the waveguiding property of the ZnO nanobelt is also orientation dependent and results in either apparent enhancement or suppression of Raman scattering from the underlying substrate. We demonstrate that various features of Raman spectrum of ZnO and the modulation of the substrate signal can be employed for the rapid and nondestructive identification of the crystal growth direction and orientation of these nanostructures even after integration into devices, which is impossible with current electron microscopy and diffraction techniques. We believe that the general features observed here are equally applicable to other wurtzite nanostructures (ZnS, GaN) which are critical in optoelectronics, lasing, and piezotronic applications.

  5. Tunable Nanostructures and Crystal Structures in Titanium Oxide Films

    Directory of Open Access Journals (Sweden)

    Fuess H

    2008-01-01

    Full Text Available Abstract Controllable nanostructures in spin coated titanium oxide (TiO2 films have been achieved by a very simple means, through change of post deposition annealing temperature. Electron beam imaging and reciprocal space analysis revealed as-deposited TiO2films to be characterized by a dominant anatase phase which converts to the rutile form at 600 °C and reverts to the anatase modification at 1,200 °C. The phase changes are also accompanied by changes in the film microstructure: from regular nanoparticles (as-deposited to nanowires (600 °C and finally to dendrite like shapes at 1,200 °C. Photoluminescence studies, Raman spectral results, and X-ray diffraction data also furnish evidence in support of the observed solid state phase transformations in TiO2.

  6. Non-classical crystallization of thin films and nanostructures in CVD and PVD processes

    CERN Document Server

    Hwang, Nong Moon

    2016-01-01

    This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively ...

  7. Nanostructure characterization of beta-sheet crystals in silk under various temperatures

    Directory of Open Access Journals (Sweden)

    Zhang Yan

    2014-01-01

    Full Text Available This paper studies the nanostructure characterizations of β-sheet in silk fiber with different reaction temperatures. A molecular dynamic model is developed and simulated by Gromacs software packages. The results reveal the change rules of the number of hydrogen bonds in β-sheet under different temperatures. The best reaction temperature for the β-sheet crystals is also found. This work provides theoretical basis for the designing of materials based on silk.

  8. Experimental and numerical investigations of Si-based photonic crystals with ordered Ge quantum dots emitters

    International Nuclear Information System (INIS)

    Jannesari, R.

    2014-01-01

    In recent years quasi-two-dimensional (2D) photonic crystals, also known as photonic crystal slabs, have been the subject of extensive research. The present work is based on photonic crystals where a hexagonal 2D lattice of air holes is etched through a silicon-on-insulator (SOI) slab. Light is guided in the horizontal plane using photonic band-gap properties, and index guiding provides the optical confinement in the third dimension. This work discusses photonic crystal slabs with Ge quantum dots (QDs) as internal sources. Ge quantum dots have luminescence around 1500nm, which is well suited for optical fiber communication in a way that is fully compatible with standard silicon technology. QD emission can be controlled by epitaxial growth on a pre-patterned SOI substrate. In this way the position of the QDs is controlled, as well as their homogeneity and spectral emission range. During this thesis, photonic crystal fabrication techniques together with techniques for the alignment of the photonic crystal holes with the QDs positions were developed. The employed techniques involve electron beam lithography (EBL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Perfect ordering of the QDs position was achieved by employing these techniques for pit patterning and the subsequent growth of Ge dots using molecular beam epitaxy (MBE). A second EBL step was then used for photonic crystal writing, which needed to be aligned with respect to the pit pattern with a precision of about ± 30nm. Micro-photoluminescence spectroscopy was used for the optical characterization of the photonic crystal. The emission from ordered quantum dots in different symmetry positions within a unit cell of photonic crystal was theoretically and experimentally investigated and compared with randomly distributed ones. Besides, different geometrical parameters of photonic crystals were studied. The theoretical investigations were mainly based on the rigorous coupled wave analysis (RCWA

  9. Micro-Raman scattering studies of Ge-Sb-Te bulk crystals and nanoparticles

    International Nuclear Information System (INIS)

    Cho, E.; Yoon, S.; Yoon, H. R.; Jo, W.

    2006-01-01

    We measured micro-Raman scattering spectra of commercially available Ge-Sb-Te (GST) bulk crystals and GST nanoparticles which were synthesized using a pulsed laser ablation method. The lack of the amorphous Te-Te stretching mode near 150 cm -1 from the Raman spectrum of the bulk sample indicated that the sample was well-crystallized. We also measured GST nanoparticles with different growth conditions, from which we could get information towards the optimal growth conditions for better crystallinity of the GST nanoparticles. Our results suggest that through local structural information, micro-Raman scattering spectroscopy can be used to study the phases and the phase changes in the GST bulk crystals and nanoparticles which is being developed for low-power non-volatile memory applications.

  10. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Isa, F.; Isella, G. [L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Wewior, L.; Fuster, D.; Alén, B. [IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), C/Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Richter, M.; Uccelli, E. [Functional Materials Group, IBM Research-Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Niedermann, P.; Neels, A.; Dommann, A. [Centre Suisse d' Electronique et Microtechnique, Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Mancarella, F. [CNR-IMM of Bologna, Via Gobetti 101, I-40129 Bologna (Italy)

    2014-01-13

    We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

  11. Mn-Rich Nanostructures in Ge1-xMnx: Fabrication, Microstructure, and Magnetic Properties

    Directory of Open Access Journals (Sweden)

    Ying Jiang

    2012-01-01

    Full Text Available Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainly Ge1-xMnx, which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magnetic Ge1-xMnx bulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.

  12. IBA study of SiGe/SiO{sub 2} nanostructured multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, Nuno P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Laboratório de Engenharia Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Vieira, E.M.F. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Parisini, A. [CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna (Italy); Conde, O. [Physics Department and ICEMS, University of Lisbon, 1749-016 Lisboa (Portugal); Martín-Sánchez, J. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Rolo, A.G. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Chahboun, A. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); FST Tanger, Physics Department, BP 416 Tanger (Morocco); Gomes, M.J.M. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal)

    2014-07-15

    SiGe/SiO{sub 2} multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering and elastic recoil analysis detection techniques, in order to determine the thickness and composition of the nanolayers, and gain insight into the evolution of the roughness of the layers. The results are correlated with other structural properties of the samples, as measured with complementary techniques such as grazing incidence X-ray diffraction annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy.

  13. Combined quartz crystal microbalance with dissipation (QCM-D) and generalized ellipsometry (GE) to characterize the deposition of titanium dioxide nanoparticles on model rough surfaces.

    Science.gov (United States)

    Kananizadeh, Negin; Rice, Charles; Lee, Jaewoong; Rodenhausen, Keith B; Sekora, Derek; Schubert, Mathias; Schubert, Eva; Bartelt-Hunt, Shannon; Li, Yusong

    2017-01-15

    Measuring the interactions between engineered nanoparticles and natural substrates (e.g. soils and sediments) has been very challenging due to highly heterogeneous and rough natural surfaces. In this study, three-dimensional nanostructured slanted columnar thin films (SCTFs), with well-defined roughness height and spacing, have been used to mimic surface roughness. Interactions between titanium dioxide nanoparticles (TiO 2 NP), the most extensively manufactured engineered nanomaterials, and SCTF coated surfaces were measured using a quartz crystal microbalance with dissipation monitoring (QCM-D). In parallel, in-situ generalized ellipsometry (GE) was coupled with QCM-D to simultaneously measure the amount of TiO 2 NP deposited on the surface of SCTF. While GE is insensitive to effects of mechanical water entrapment variations in roughness spaces, we found that the viscoelastic model, a typical QCM-D model analysis approach, overestimates the mass of deposited TiO 2 NP. This overestimation arises from overlaid frequency changes caused by particle deposition as well as additional water entrapment and partial water displacement upon nanoparticle adsorption. Here, we demonstrate a new approach to model QCM-D data, accounting for both viscoelastic effects and the effects of roughness-retained water. Finally, the porosity of attached TiO 2 NP layer was determined by coupling the areal mass density determined by QCM-D and independent GE measurements. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Quantum Chemistry of Solids LCAO Treatment of Crystals and Nanostructures

    CERN Document Server

    Evarestov, Robert A

    2012-01-01

    Quantum Chemistry of Solids delivers a comprehensive account of the main features and possibilities of LCAO methods for the first principles calculations of electronic structure of periodic systems. The first part describes the basic theory underlying the LCAO methods  applied to periodic systems and the use of Hartree-Fock(HF), Density Function theory(DFT) and hybrid Hamiltonians. The translation and site symmetry consideration is included to establish connection between k-space solid –state physics and real-space quantum chemistry. The inclusion of electron correlation effects for periodic systems is considered on the basis of localized crystalline orbitals. The possibilities of LCAO methods for chemical bonding analysis in periodic systems are discussed. The second part deals with the applications of LCAO methods  for calculations of bulk crystal properties, including magnetic ordering and crystal structure optimization.  In the second edition two new chapters are added in the application part II of t...

  15. Influence of the pre-adsorption of group III metals on the growth of Ge nanostructures on vicinal Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Speckmann, Moritz; Schmidt, Thomas; Flege, Jan Ingo; Heidmann, Inga; Hoecker, Jan; Wilkens, Torsten; Falta, Jens [Institute of Solid State Physics, University of Bremen (Germany)

    2010-07-01

    The employment of metals as surfactants (surface active agents) is a promising approach to influence the growth of Ge nanostructures on Si surfaces. Especially for group III and group V elements an enhanced or suppressed Stranski-Krastanov growth behaviour is found, respectively. For all group III metal on silicon systems presented in this study we observe a drastic change of the surface morphology after adsorption of a few monolayers. For the investigations we used a variety of surface sensitive techniques, e.g., scanning tunneling microscopy (STM), spot profile analysing low-energy electron diffraction (SPA-LEED), low-energy electron microscopy (LEEM), and X-ray standing waves (XSW). On the one hand, the adsorption of Ga and In leads to a smoothening of the intrinsically unstable Si(112) surface and the development of 1D metal chains. But on the other hand, the stable Si(113) is decomposed into a regular array of nanofacets after adsorption of Ga. For all cases shown here the possibility of growing highly anisotropic Ge Islands is demonstrated (Ga/Si(113),Ga/Si(112),In/Si(112)).

  16. Current Thermal Emission from Photonic Nanostructures Composed of TA, W, GE, and HFO2 Thin Films

    Science.gov (United States)

    2015-03-01

    41) Potter evaluated the Sellmeier...Hunt, A. Vredenberg, T. Harris , J. Poate, D. Jacobson, Y. Wong and G. Zydzik, ’Enhanced photoluminescence by resonant absorption in Er...Optical Society of America, vol. 69, no. 1, p. 179-180, 1979. [76] R. F. Potter , ‘Germanium (Ge),’ in Handbook of optical Constants of Solids

  17. On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage

    NARCIS (Netherlands)

    Kooi, BJ; De Hosson, JTM

    2004-01-01

    This article addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at. % Ge containing Sb3.6Te films (10, 20, and 40 nm thick) as studied with transmission electron microcopy using in situ annealing. These materials exhibit growth-dominated crystallization, in contrast to the

  18. In-situ TEM study of the crystallization of thin films composed of Sb3.6Te with Ge

    NARCIS (Netherlands)

    Kooi, BJ; Groot, WMG; De Hosson, JTM; Ahner, JW; Levy, J; Hesselink, L; Mijiritskii, A

    2004-01-01

    This paper addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at.% Ge containing Sb3.6Te films (10, 20 and 40 nm thick) as studied using in-situ annealing in a Transmission Electron Microscope (TEM). These materials show growth-dominated crystallization, in contrast to

  19. Vertical gradient freeze of 4 inch Ge crystals in a heater-magnet module

    Science.gov (United States)

    Frank-Rotsch, Ch.; Rudolph, P.

    2009-04-01

    For the first time 4-in. Ge single crystals were grown using the vertical gradient freeze technique (VGF) in a traveling magnetic field (TMF) generated in a heater-magnet module (HMM). The HMM was placed closely around the growth container inside the chamber of the industrial Bridgman equipment "Kronos". The HMM generates heat and a TMF together. It has a coil-shaped design and replaces the standard meander-type heater. Direct current (DC) for heat production and out-of-phase-accelerated currents (AC) for TMF generation were simultaneously delivered to three equally spaced coil segments connected by star-type wiring. In order to achieve a nearly flat and slightly convex growing interface the AC amplitude, frequency and phase shift have been optimized numerically by using the 3D CrysMAS code and validated by striation analysis on as-grown crystals. Low-field frequencies in the range f=20-50 Hz proved to be of most suitable condition. TMF programming is required to obtain constant interface morphology over the whole growth run. First Ge single crystals grown under nearly optimal conditions show reduced macro- and micro-inhomogeneities, relatively low dislocation density of (3-10)×10 2 cm -2, and high carrier mobility of μp=2800 cm 2 V -1 s -1.

  20. Crystal structure and thermal expansion of Mn(1-x)Fe(x)Ge.

    Science.gov (United States)

    Dyadkin, Vadim; Grigoriev, Sergey; Ovsyannikov, Sergey V; Bykova, Elena; Dubrovinsky, Leonid; Tsvyashchenko, Anatoly; Fomicheva, L N; Chernyshov, Dmitry

    2014-08-01

    A series of temperature-dependent single-crystal and powder diffraction experiments has been carried out using synchrotron radiation in order to characterize the monogermanides of Mn, Fe and their solid solutions. The MnGe single crystal is found to be enantiopure and we report the absolute structure determination. The thermal expansion, parametrized with the Debye model, is discussed from the temperature-dependent powder diffraction measurements for Mn(1-x)Fe(x)Ge (x = 0, 0.1, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.75, 0.8, 0.9). Whereas the unit-cell dimension and the Debye temperature follow a linear trend as a function of composition, the thermal expansion coefficient deviates from linear dependence with increasing Mn content. No structural phase transformations have been observed for any composition in the temperature range 80-500 K for both single-crystal and powder diffraction, indicating that the phase transition previously observed with neutron powder diffraction most probably has a magnetic origin.

  1. Synthesis of self-assembled Ge nano crystals employing reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez H, A. [Universidad Autonoma del Estado de Hidalgo, Escuela Superior de Apan, Calle Ejido de Chimalpa Tlalayote s/n, Col. Chimalpa, Apan, Hidalgo (Mexico); Hernandez H, L. A. [IPN, Escuela Superior de Fisica y Matematicas, San Pedro Zacatenco, 07730 Ciudad de Mexico (Mexico); Monroy, B. M.; Santana R, G. [UNAM, Instituto de Investigaciones en Materiales, Apdo. Postal 70-360, 04510 Ciudad de Mexico (Mexico); Santoyo S, J.; Gallardo H, S. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14740, 07300 Ciudad de Mexico (Mexico); Marquez H, A. [Universidad de Guanajuato, Campus Irapuato-Salamanca, Departamento de Ingenieria Agricola, Km. 9 Carretera Irapuato-Silao, 36500 Irapuato, Guanajuato (Mexico); Mani G, P. G.; Melendez L, M. [Universidad Autonoma de Ciudad Juarez, Instituto de Ingenieria y Tecnologia, Departamento de Fisica y Matematicas, 32310 Ciudad Juarez, Chihuahua (Mexico)

    2016-11-01

    This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nano crystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO{sub 2}/Ge/SiO{sub 2} by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO{sub 2} layer buy the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nano crystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps. The surface topography of SiO{sub 2} reference samples was carried out by atomic force microscopy. The crystallographic properties of the samples were studied by grazing incidence X-ray diffraction at 1.5 degrees carried out in a Siemens D-5000 system employing the Cu Kα wavelength. (Author)

  2. Laser Coherence Meter Based on Nanostructured Liquid Crystals

    Directory of Open Access Journals (Sweden)

    A. Anczykowska

    2013-01-01

    Full Text Available We present the method for coherence length measurement using coherence meter based on hybrid liquid crystal structures doped with gold nanoparticles. The results indicate that the method is able to determine the coherence length of coherent light sources with precision of 0.01 m at wavelength range from 200 to 800 nm for wide range of initial beam powers starting from 1 mW. Given the increasing use of laser technology in industry, military, or medicine, our research may open up a possible route for the development of improved techniques of coherent diagnostic light sources.

  3. Observation of channeling for 6500 GeV/c protons in the crystal assisted collimation setup for LHC

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2016-07-01

    Full Text Available Two high-accuracy goniometers equipped with two bent silicon crystals were installed in the betatron cleaning insertion of the CERN Large Hadron Collider (LHC during its long shutdown. First beam tests were recently performed at the LHC with 450 GeV/c and 6500 GeV/c stored proton beams to investigate the feasibility of beam halo collimation assisted by bent crystals. For the first time channeling of 6500 GeV/c protons was observed in a particle accelerator. A strong reduction of beam losses due to nuclear inelastic interactions in the aligned crystal in comparison with its amorphous orientation was detected. The loss reduction value was about 24. Thus, the results show that deflection of particles by a bent crystal due to channeling is effective for this record particle energy.

  4. Molecular Field Calculation of Magnetization on NdRh2Ge2 Single Crystal

    Directory of Open Access Journals (Sweden)

    A. Himori

    2008-01-01

    Full Text Available Calculation of magnetization of the ternary single crystal compound NdRh2Ge2 has been carried out by using the wave-like molecular field model to explain the complex magnetic behavior. The field-induced magnetic structures having the propagation vectors, 2=(0,0,39/40, 3=(0,0,35/40, 4=(0,0,31/40, and 5=(0,0,0/40 (= the field-induced ferromagnetic phase were proposed. Calculation on the basis of these structures and the antiferromagnetic phase with 1=(0,0,1 well reproduces the experimental magnetization processes and - magnetic phase diagram.

  5. Helical growth of aluminum nitride: new insights into its growth habit from nanostructures to single crystals.

    Science.gov (United States)

    Zhang, Xing-Hong; Shao, Rui-Wen; Jin, Lei; Wang, Jian-Yu; Zheng, Kun; Zhao, Chao-Liang; Han, Jie-Cai; Chen, Bin; Sekiguchi, Takashi; Zhang, Zhi; Zou, Jin; Song, Bo

    2015-05-15

    By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.

  6. Thermally controlled growth of surface nanostructures on ion-modified AIII-BV semiconductor crystals

    Science.gov (United States)

    Trynkiewicz, Elzbieta; Jany, Benedykt R.; Wrana, Dominik; Krok, Franciszek

    2018-01-01

    The primary motivation for our systematic study is to provide a comprehensive overview of the role of sample temperature on the pattern evolution of several AIII-BV semiconductor crystal (001) surfaces (i.e., InSb, InP, InAs, GaSb) in terms of their response to low-energy Ar+ ion irradiation conditions. The surface morphology and the chemical diversity of such ion-modified binary materials has been characterized by means of scanning electron microscopy (SEM). In general, all surface textures following ion irradiation exhibit transitional behavior from small islands, via vertically oriented 3D nanostructures, to smoothened surface when the sample temperature is increased. This result reinforces our conviction that the mass redistribution of adatoms along the surface plays a vital role during the formation and growth process of surface nanostructures. We would like to emphasize that this paper addresses in detail for the first time the topic of the growth kinetics of the nanostructures with regard to thermal surface diffusion, while simultaneously offering some possible approaches to supplementing previous studies and therein gaining a new insight into this complex issue. The experimental results are discussed with reference to models of the pillars growth, abutting on preferential sputtering, the self-sustained etch masking effect and the redeposition process recently proposed to elucidate the observed nanostructuring mechanism.

  7. High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO{sub x} interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan, E-mail: sychen@xmu.edu.cn; Li, Cheng; Huang, Wei; Tang, Dingliang

    2015-12-15

    High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO{sub x} interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

  8. Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

    Science.gov (United States)

    Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

    2016-11-10

    A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

  9. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    International Nuclear Information System (INIS)

    Shah, V. A.; Gammon, P. M.; Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Chávez-Ángel, E.; Shchepetov, A.; Prunnila, M.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.

    2014-01-01

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials

  10. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Shah, V. A., E-mail: vishal.shah@warwick.ac.uk; Gammon, P. M. [Department of Engineering, The University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R. [Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Chávez-Ángel, E. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Department of Physics, UAB, 08193 Bellaterra (Barcelona) (Spain); Shchepetov, A.; Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); and others

    2014-04-14

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm{sup 2}. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

  11. Photon multiplicity in the hard radiation of 150 GeV electrons in an aligned germanium crystal

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.B.; Sun, C.R.

    1988-01-01

    Mean values m of photon multiplicity in the radiation of 150 GeV electrons directed at and near the axis of a 0.185 mm thick Ge crystal cooled to 100 K have been deduced from the measurements of pair conversion probabilities. Depending on the distribution of multiplicity assumed, values of m ranging from 3.8 to 4.3 are obtained for the previously reported anomalous radiation peak. (orig.)

  12. Influence of interface potential on the effective mass in Ge nanostructures

    International Nuclear Information System (INIS)

    Barbagiovanni, E. G.; Cosentino, S.; Terrasi, A.; Mirabella, S.; Lockwood, D. J.; Costa Filho, R. N.

    2015-01-01

    The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism, we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism, we determine the length scale over which the interface potential influences the effective mass

  13. Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

    International Nuclear Information System (INIS)

    Andrikopoulos, K S; Yannopoulos, S N; Voyiatzis, G A; Kolobov, A V; Ribes, M; Tominaga, J

    2006-01-01

    We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe (a-GeTe) films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of temperature. These changes involve modifications of atomic arrangements such as to facilitate the rapid amorphous to crystal transformation, which is the major advantage of phase-change materials used in optical data storage media. A particular structural model, supported by polarization analysis, is proposed which is compatible with the experimental data as regards both the structure of a-GeTe and the crystallization transition. The remarkable difference between the Raman spectrum of the crystal and the glass can thus naturally be accounted for

  14. Crystal structures, phase relationships, and magnetic phase transitions of R5M4 compounds (R = rare earths, M = Si, Ge)

    Science.gov (United States)

    Ouyang, Zhong-Wen; Rao, Guang-Hui

    2013-09-01

    Our recent studies of the crystal structures, phase transitions, and magnetic properties of intermetallic compounds R5M4 (R = rare earths; M = Si, Ge) are reviewed briefly. First, crystal structures, phase relationships, and magnetic properties of several 5:4 compounds, including Nd5Si4-xGex, Pr5Si4-xGex, Gd5-xLaxGe4, La5Si4, and Gd5Sn4, are presented. In particular, the canted spin structures as well as the magnetic phase transitions in Pr5Si2Ge2 and Pr5Ge4 investigated by neutron powder diffractions and small-angle neutron scattering are reviewed. Second, the crystal structures and magnetic properties of the most studied compounds Gd5(Si,Ge)4 are summarized. The focus is on the parent compound Gd5Ge4, which is an amazing material exhibiting magnetic anisotropy, angular dependent spin-flop transition, metastable magnetic response, Griffiths-like phase, thermal effect under pulsed fields, antiferromagnetic and ferromagnetic resonances, pronounced effects of impurities, and high-field induced magnetic transitions.

  15. Steering of sub-GeV charged particle beams by use of reflections in thin crystal targets

    CERN Document Server

    Bellucci, S; Chirkov, P N; Giannini, G; Maisheev, V A; Yazynin, I A

    2012-01-01

    The phenomenon of deflection of a charged particle beam due to channeling in a bent crystal has been well investigated and successfully applied for beam extraction at high-energy accelerators, for energies about 10 GeV and higher. However, it is of a big practical interest to consider the task of bending and extracting charged particles with energies below 1 GeV, for example, for production of ultrastable beams of low emittance for medical and biological applications. However, for low energy, i.e. below 1 GeV, the bent crystal channeling is not efficient. That motivates us to consider in this article an other crystal technique, based on thin straight crystal targets, as elements for the extraction and collimation of the circulating beam in an accelerator ring. The main advantages of reflection in straight crystals, in comparison with bent crystal channeling, consist in the small length of straight crystals along the beam, that reduces the amount of nuclear interactions and improves the background.

  16. An Electrochemical Quartz Crystal Microbalance Multisensor System Based on Phthalocyanine Nanostructured Films: Discrimination of Musts

    Directory of Open Access Journals (Sweden)

    Celia Garcia-Hernandez

    2015-11-01

    Full Text Available An array of electrochemical quartz crystal electrodes (EQCM modified with nanostructured films based on phthalocyanines was developed and used to discriminate musts prepared from different varieties of grapes. Nanostructured films of iron, nickel and copper phthalocyanines were deposited on Pt/quartz crystals through the Layer by Layer technique by alternating layers of the corresponding phthalocyanine and poly-allylamine hydrochloride. Simultaneous electrochemical and mass measurements were used to study the mass changes accompanying the oxidation of electroactive species present in must samples obtained from six Spanish varieties of grapes (Juan García, Prieto Picudo, Mencía Regadío, Cabernet Sauvignon, Garnacha and Tempranillo. The mass and voltammetric outputs were processed using three-way models. Parallel Factor Analysis (PARAFAC was successfully used to discriminate the must samples according to their variety. Multi-way partial least squares (N-PLS evidenced the correlations existing between the voltammetric data and the polyphenolic content measured by chemical methods. Similarly, N-PLS showed a correlation between mass outputs and parameters related to the sugar content. These results demonstrated that electronic tongues based on arrays of EQCM sensors can offer advantages over arrays of mass or voltammetric sensors used separately.

  17. Tuning the Structural Color of a 2D Photonic Crystal Using a Bowl-like Nanostructure.

    Science.gov (United States)

    Umh, Ha Nee; Yu, Sungju; Kim, Yong Hwa; Lee, Su Young; Yi, Jongheop

    2016-06-22

    Structural colors of the ordered photonic nanostructures are widely used as an effective platform for manipulating the propagation of light. Although several approaches have been explored in attempts to mimic the structural colors, improving the reproducibility, mechanical stability, and the economic feasibility of sophisticated photonic crystals prepared by complicated processes continues to pose a challenge. In this study, we report on an alternative, simple method for fabricating a tunable photonic crystal at room temperature. A bowl-like nanostructure of TiO2 was periodically arranged on a thin Ti sheet through a two-step anodization process where its diameters were systemically controlled by changing the applied voltage. Consequently, they displayed a broad color distribution, ranging from red to indigo, and the principal reason for color generation followed the Bragg diffraction theory. This noncolorant method was capable of reproducing a Mondrian painting on a centimeter scale without the need to employ complex architectures, where the generated structural colors were highly stable under mechanical or chemical influence. Such a color printing technique represents a potentially promising platform for practical applications for anticounterfeit trademarks, wearable sensors, and displays.

  18. Influence of After-Growth Treatments on the Optical Parameters of Teraherz ZnGeP2 Crystals

    Science.gov (United States)

    Gribenyukov, A. I.; Dorozhkin, K. V.; Morozov, A. N.; Suslyaev, V. I.

    2018-03-01

    Results of investigations are presented of the THz spectra of the refractive index n(v) and of the extinction coefficient k(v) for ZnGeP2 single crystals with different degrees of technological treatment - after growth by the vertical Bridgman technique, after heat treatment at temperatures above the Debye temperature for the highest-frequency phonons, and after modification of the single-crystal properties under irradiation by fast electrons ( 4 MeV).

  19. Na2TiGeO5: Crystal structure stability at low temperature and high pressure

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2008-01-01

    and GeO4 tetrahedra, alternating with layers of Na+ cations. Antiparallel alignment of the short apical titanyl bond in adjacent rows of the polyhedral layer gives rise to spontaneous strain, when a distortion of the TiO5 groups occurs. Single-crystal structures determined at room temperature and 120 K......-axis. The structure distortion, however, is too small to allow any unambiguous determination of the symmetry-breaking effects. The bulk modulus and its pressure derivative have been determined as B-0 = 89(2) GPa and B'(0) = 4.0. A pressure-induced phase transformation takes place at P-c approximate to 12.5 GPa...

  20. Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    Zélia Soares Macedo

    2003-12-01

    Full Text Available Bi4Ge3O12 (bismuth germanate - BGO single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9 to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04 eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response.

  1. Investigations of the energy and angular dependence of ultra-short radiation lengths in Si, Ge and W single crystals

    CERN Multimedia

    Very recently, experiments NA33 and WA81 have shown that pair production by energetic photons incident along crystalline directions is strongly enhanced as compared to the Bethe-Heitler value for amorphous targets. The enhanced pair production sets in at around 40 GeV in Ge crystals and rises almost linearly with photon energy up to a calculated maximum enhancement of around thirty. In Si, this maximum is expected to be nearly two orders of magnitude above the Bethe-Heitler value.\\\\ For GeV electrons/positrons incident along crystal axes, the radiation energy loss also shows a very large enhancement of approximately two orders of magnitude. In a 0.4 mm W crystal, a 100 GeV electron is expected to emit on average 70% of its total energy.\\\\ The combination of these two dramatic enhancements means that the electromagnetic shower develops much faster around crystalline directions, corresponding to ultrashort radiation lengths.\\\\ The aim of this experiment is to investigate the shower development in ...

  2. New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

    Science.gov (United States)

    Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

    2017-10-01

    Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.

  3. Anisotropic interactions in magnetic crystals with S-state ions. Nanostructures

    Science.gov (United States)

    Ovchinnikov, S. G.; Rudenko, V. V.

    2014-12-01

    Anisotropy mechanisms in compounds with S-state ions are discussed, including the 'single-ion' exchange mechanism that was developed theoretically by Nikiforov and coworkers based on the two-ion model and which has only recently received detailed experimental study. Results demonstrating the significant role of the 'single-ion' source are presented. An independent generalized method for quantitatively describing and predicting the anisotropy of magnetically ordered crystals is discussed, and its potential for the investigation of the BiFeO _3 multiferroic in the region of the existence of a spin cycloid is examined. The anisotropic interactions responsible for the formation of nanostructures in the form of spin vortices (skyrmions) in MnSi and Cu _2OSeO _3 are analyzed.

  4. Surface plasmon-enhanced amplified spontaneous emission from organic single crystals by integrating graphene/copper nanoparticle hybrid nanostructures.

    Science.gov (United States)

    Li, Yun-Fei; Feng, Jing; Dong, Feng-Xi; Ding, Ran; Zhang, Zhen-Yu; Zhang, Xu-Lin; Chen, Yang; Bi, Yan-Gang; Sun, Hong-Bo

    2017-12-14

    Organic single crystals have attracted great attention because of their advantages such as high carrier mobility and high thermal stability. Amplified spontaneous emission (ASE) is an important parameter for the optoelectronic applications of organic single crystals. Here, surface plasmon-enhanced ASE from the organic single crystals has been demonstrated by integrating graphene/copper nanoparticle (Cu NP) hybrid nanostructures. Graphene is fully accommodating to the topography of Cu NPs by the transfer-free as-grown method for the configuration of the hybrid nanostructures, which makes full electrical contact and strong interactions between graphene and the local electric field of surface plasmon resonances. The enhanced localized surface plasmon resonances induced by the hybrid nanostructures result in an enhanced intensity and lowered threshold of ASE from the organic single crystals. Moreover, the as-grown graphene sheets covering fully and uniformly on the Cu NPs act as a barrier against oxidation, and results in an enhanced stability of the fluorescence from the crystals.

  5. Measurements of Pair Production Under Channelling Conditions by 70-180 GeV Photons Incident on Single Crystals

    CERN Multimedia

    2002-01-01

    This experiment will use the WA69 set-up to deliver a tagged photon beam in the energy range from 15~GeV to 150~GeV with a total angular spread of about @M~0.5~mrad. The incident photon direction is known to about 35~@mrad through the direction of the emitting electron. The photon beam is incident on an about 1~mm thick Ge single crystal in order to investigate pair production in single crystals. Above a certain energy threshold photons incident along crystal axis will show strongly increased pair production yi - the so-called .us Channelling Pair Production (ChPP). The produced pairs are analyzed in the @W-spectrometer. The large spread in incident photon angles offers an excellent opportunity to investigate in one single experiment the pair production in an angular region around a crystal axes and thereby compare ChPP with coherent (CPP) and incoherent (ICPP) processes. The very abrupt onset of ChPP (around threshold) will be measured and give a crucial test of the theoretical calculations. The differential...

  6. Luminescence of SiO2 and GeO2 crystals with rutile structure. Comparison with α-quartz crystals and relevant glasses (Review Article)

    Science.gov (United States)

    Trukhin, A. N.

    2016-07-01

    Luminescence properties of SiO2 in different structural states are compared. Similar comparison is made for GeO2. Rutile and α-quartz structures as well as glassy state of these materials are considered. Main results are that for α-quartz crystals the luminescence of self-trapped exciton is the general phenomenon that is absent in the crystal with rutile structure. In rutile structured SiO2 (stishovite) and GeO2 (argutite) the main luminescence is due to a host material defect existing in as-received (as-grown) samples. The defect luminescence possesses specific two bands, one of which has a slow decay (for SiO2 in the blue and for GeO2, in green range) and another, a fast ultraviolet (UV) band (4.75 eV in SiO2 and at 3 eV in GeO2). In silica and germania glasses, the luminescence of self-trapped exciton coexists with defect luminescence. The latter also contains two bands: one in the visible range and another in the UV range. The defect luminescence of glasses was studied in details during last 60-70 years and is ascribed to oxygen deficient defects. Analogous defect luminescence in the corresponding pure nonirradiated crystals with α-quartz structure is absent. Only irradiation of a α-quartz crystal by energetic electron beam, γ-rays and neutrons provides defect luminescence analogous to glasses and crystals with rutile structure. Therefore, in glassy state the structure containing tetrahedron motifs is responsible for existence of self-trapped excitons and defects in octahedral motifs are responsible for oxygen deficient defects.

  7. Influence of ZnO nanostructures in liquid crystal interfaces for bistable switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Kaushik, E-mail: kaushikpal@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Zhan, Bihong, E-mail: bihong_zhan@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Madhu Mohan, M.L.N. [Liquid Crystal Research Laboratory (LCRL), Bannari Amman Institute of Technology, Sathyamangalam 638 401 (India); Schirhagl, Romana [University Medical Center Groningen, Department of BioMedical Engineering, Ant. Deusinglaan 1, 9713 AV Groningen (Netherlands); Wang, Guoping, E-mail: guopingwang@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China)

    2015-12-01

    Graphical abstract: - Highlights: • One step bench top novel synthesis and growth dynamics of ZnO structures are successfully performed. • Nanostructures dispersing liquid crystals (NDLC) is recently found to have significant influence on the nucleation and growth of many functional nanocrystals (NCs), and provide a fundamental approach to modify the crystallographic phase, size, morphology, and electronic configuration of nanomaterials. • Electro-optical switching application ensures the bright field droplet design marble pattern of smectic G phase, nematic and most significant twist nematic phase pattern are obtained. • Spontaneous polarization, rotational viscosity and response time study, exploring smart applications in LCD technology. - Abstract: The controlled fabrication of nanometer-scale objects is without doubt one of the central issues in current science and technology. In this article, we exhibit a simple, one-step bench top synthesis of zinc oxide nano-tetrapods and nano-spheres which were tailored by the facial growth of nano-wires (diameter ≈ 24 nm; length ≈ 118 nm) and nano-cubes (≈395 nm edge) to nano-sphere (diameter ≈ 585 nm) appeaded. The possibilities of inexpensive, simple solvo-chemical synthesis of nanostructures were considered. In this article, a successful attempt has been made that ZnO nano-structures dispersed on well aligned hydrogen bonded liquid crystals (HBLC) comprising azelaic acid (AC) with p-n-alkyloxy benzoic acid (nBAO) by varying the respective alkyloxy carbon number (n = 5). The dispersion of nanomaterials with HBLC is an effective route to enhance the existing functionalities. A series of these composite materials were analyzed by polarizing optical microscope's electro-optical switching. An interesting feature of AC + nBAO is the inducement of tilted smectic G phase with increasing carbon chain length. Phase diagrams of the above hybrid ZnO nanomaterial influenced LC complex and pure LC were

  8. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals

    Science.gov (United States)

    Jiménez‐Solano, Alberto; Delgado‐Sánchez, José‐Maria; Calvo, Mauricio E.; Miranda‐Muñoz, José M.; Lozano, Gabriel; Sancho, Diego; Sánchez‐Cortezón, Emilio

    2015-01-01

    Abstract Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one‐dimensional photonic crystals and in‐plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide‐area nanostructured multilayers with photonic crystal properties were deposited by a cost‐efficient and scalable liquid processing amenable to large‐scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in‐plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long‐term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. PMID:27656090

  9. Self-assembled hierarchical nanostructures for high-efficiency porous photonic crystals.

    Science.gov (United States)

    Passoni, Luca; Criante, Luigino; Fumagalli, Francesco; Scotognella, Francesco; Lanzani, Guglielmo; Di Fonzo, Fabio

    2014-12-23

    The nanoscale modulation of material properties such as porosity and morphology is used in the natural world to mold the flow of light and to obtain structural colors. The ability to mimic these strategies while adding technological functionality has the potential to open up a broad array of applications. Porous photonic crystals are one such technological candidate, but have typically underachieved in terms of available materials, structural and optical quality, compatibility with different substrates (e.g., silicon, flexible organics), and scalability. We report here an alternative fabrication method based on the bottom-up self-assembly of elementary building blocks from the gas phase into high surface area photonic hierarchical nanostructures at room temperature. Periodic refractive index modulation is achieved by stacking layers with different nanoarchitectures. High-efficiency porous Bragg reflectors are successfully fabricated with sub-micrometer thick films on glass, silicon, and flexible substrates. High diffraction efficiency broadband mirrors (R≈1), opto-fluidic switches, and arrays of photonic crystal pixels with size<10 μm are demonstrated. Possible applications in filtering, sensing, electro-optical modulation, solar cells, and photocatalysis are envisioned.

  10. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals.

    Science.gov (United States)

    Jiménez-Solano, Alberto; Delgado-Sánchez, José-Maria; Calvo, Mauricio E; Miranda-Muñoz, José M; Lozano, Gabriel; Sancho, Diego; Sánchez-Cortezón, Emilio; Míguez, Hernán

    2015-12-01

    Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one-dimensional photonic crystals and in-plane CuInGaSe 2 (CIGS) solar cells. Highly uniform and wide-area nanostructured multilayers with photonic crystal properties were deposited by a cost-efficient and scalable liquid processing amenable to large-scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in-plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long-term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

  11. Hydrothermal synthesis of nanostructured SnO particles through crystal growth in the presence of gelatin

    Energy Technology Data Exchange (ETDEWEB)

    Uchiyama, Hiroaki, E-mail: h_uchi@kansai-u.ac.jp; Nakanishi, Shunsuke; Kozuka, Hiromitsu

    2014-09-15

    Crystalline SnO particles were obtained from Sn{sub 6}O{sub 4}(OH){sub 4} by the hydrothermal treatment in aqueous solutions containing gelatin at 150 °C for 24 h, where the morphologies of the SnO products changed from blocks to layered disks, stacked plates and unshaped aggregates with increasing amount of gelatin in the solutions. Such morphological changes of SnO particles were thought to be attributed to the suppression of the growth of SnO crystals by the adsorbed gelatin. - Graphical abstract: Nanostructured SnO particles were obtained from Sn{sub 6}O{sub 4}(OH){sub 4} by the hydrothermal treatment in gelatin solutions. - Highlights: • SnO particles were prepared from Sn{sub 6}O{sub 4}(OH){sub 4} by the hydrothermal treatment. • The adsorption of gelatin suppressed the growth of SnO crystals. • The shape of SnO particles depends on the amount of gelatin. • Blocks, disks, stacked plates and unshaped aggregates were obtained.

  12. Single-Crystal Neutron Diffraction Study of the Heavy-Electron Superconductor CeNiGe3

    Science.gov (United States)

    Ikeda, Yoichi; Ueta, Daichi; Yoshizawa, Hideki; Nakao, Akiko; Munakata, Koji; Ohhara, Takashi

    2015-12-01

    A single-crystal neutron diffraction study was performed on anomalous antiferromagnetic ordering in the heavy-electron superconductor CeNiGe3. We observed incommensurate magnetic Bragg reflections characterized by the incommensurate propagation vector k2 = (0,0.41,1/2) below the Néel temperature of 5 K, but no significant magnetic reflection with the commensurate propagation vector k1 = (1,0,0), at which another magnetic reflection was observed in a previous neutron diffraction study with a polycrystalline sample. From the single-crystal study, we suggest that the magnetic phase of CeNiGe3 at ambient pressure is characterized only by the incommensurate propagation vector k2.

  13. Local crystal structures of Ge2Sb2Te5 revealed by the atomic pair distribution function analysis

    International Nuclear Information System (INIS)

    Shamoto, Shin-ichi; Kodama, Katsuaki; Iikubo, Satoshi; Taguchi, Tomitsugu; Yamada, Noboru; Proffen, Thomas

    2006-01-01

    Two types of optical recording crystalline material Ge 2 Sb 2 Te 5 have been studied by neutron and X-ray powder diffraction measurements. One is the crystalline cubic-phase Ge 2 Sb 2 Te 5 . The other is nanocrystalline-phase Ge 2 Sb 2 Te 5 . In the former, a large atomic displacement of germanium atoms was found by the atomic pair distribution function (PDF) analysis of neutron powder diffraction data. According to the electronic band structure calculation of isoelectronic GeTe, the electrical conductivity at the valence band with holes is not severely affected by the randomness at the cation site, whereas the thermal conductivity is significantly reduced by the randomness. For the nanocrystalline phase, the local crystal structure and the particle size distribution were obtained simultaneously by PDF analysis using a spherical-particle form factor. The lattice parameter is longer than that of the crystalline phase, suggesting an antimony-richer composition than the matrix. This compositional deviation would form the nanoparticle, resulting in nucleation-dominated crystal growth. (author)

  14. Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1–x Sb x compounds

    Science.gov (United States)

    Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

    2017-12-01

    Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R  =  rare-earth, T   =  transition metal and X  =  p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.

  15. Crystallization of Ge2Sb2Te5 films by amplified femtosecond optical pulses

    Science.gov (United States)

    Liu, Y.; Aziz, M. M.; Shalini, A.; Wright, C. D.; Hicken, R. J.

    2012-12-01

    The phase transition between the amorphous and crystalline states of Ge2Sb2Te5 has been studied by exposure of thin films to series of 60 femtosecond (fs) amplified laser pulses. The analysis of microscope images of marks of tens of microns in size provide an opportunity to examine the effect of a continuous range of optical fluence. For a fixed number of pulses, the dependence of the area of the crystalline mark upon the fluence is well described by simple algebraic results that provide strong evidence that thermal transport within the sample is one-dimensional (vertical). The crystalline mark area was thus defined by the incident fs laser beam profile rather than by lateral heat diffusion, with a sharp transition between the crystalline and amorphous materials as confirmed from line scans of the microscope images. A simplified, one-dimensional model that accounts for optical absorption, thermal transport and thermally activated crystallization provides values of the optical reflectivity and mark area that are in very good quantitative agreement with the experimental data, further justifying the one-dimensional heat flow assumption. Typically, for fluences below the damage threshold, the crystalline mark has annular shape, with the fluence at the centre of the irradiated mark being sufficient to induce melting. The fluence at the centre of the mark was correlated with the melt depth from the thermal model to correctly predict the observed melt fluence thresholds and to explain the closure and persistence of the annular crystalline marks as functions of laser fluence and pulse number. A solid elliptical mark may be obtained for smaller fluences. The analysis of marks made by amplified fs pulses present a new and effective means of observing the crystallization dynamics of phase-change material at elevated temperatures near the melting point, which provided estimates of the growth velocity in the range 7-9 m/s. Furthermore, finer control over the crystallization

  16. Evaluating the Effect of Surface Roughness on Titanium Dioxide Nanoparticle Deposition using a Combined Quartz Crystal Microbalance with Dissipation (QCM-D) and Generalized Ellipsometry (GE) Technique

    Science.gov (United States)

    Kananizadeh, N.; Lee, J.; Rodenhausen, K. B.; Sekora, D.; Schubert, M.; Schubert, E.; Bartelt-Hunt, S.; Li, Y.

    2016-12-01

    Quantification and characterization of nanoparticles in soils and sediments are very challenging because they will interact not only with soil-water chemistry but also with highly heterogeneous soil and sediment surfaces. In this work, we measured the interaction of Titanium dioxide nanoparticles (nTiO2), the most extensively manufactured engineered materials, with engineered rough surfaces under varied ionic strength conditions. Innovative three-dimensional Silicon nanostructured surfaces, referred to here as slanted columnar thin films (SCTFs), were used to generate surface roughness with controlled heights of 50nm, 100nm, and 200nm. Using atomic layer deposition technique (ALD), surfaces of SCTF were coated with either silicon dioxide or aluminum oxides to represent the most abundant silica aquifer materials and metal oxide impurities, respectively. The interaction between nTiO2 and model rough surfaces was measured using quartz crystal microbalance with dissipation monitoring (QCM-D). The data were analyzed using a model that couples the viscoelastic effect with the surface roughness effect. No nTiO2 deposition was observed on neither flat nor rough silicon dioxide surfaces under ionic strength ranged from 0 to 100 mM NaCl. On the other hand, the deposition of nTiO2 on the aluminum oxides coated surfaces increased as the height of roughness increased. In parallel with QCM-D, a Generalized Ellipsometry (GE) was used to measure the mass of deposited nTiO2. The combination of QCM-D and GE revealed that the properties (i.e. porosity and rigidness) of attached nTiO2 layer on the QCM-D surfaces were dependent on ionic strength and surface roughness.

  17. Growth and characterization of Ge nano-structures on Si(113) by adsorbate-mediated epitaxy; Wachstum und Charakterisierung von Ge-Nanostrukturen auf Si(113) durch Adsorbat-modifizierte Epitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Clausen, T.

    2006-11-15

    In the work presented here Ge nano-structures on Si(113) substrates have been grown by adsorbate-mediated epitaxy at sample temperatures between 400 C and 700 C. The Ge nano-islands and nano-layers have been investigated regarding their atomic reconstruction, morphology, strain state, chemical composition and defect structure. Various in-situ and ex-situ experimental techniques have been used, as there are low-energy electron diffraction, low-energy electron microscopy, X-ray photoemission electron microscopy, spot profile analysis low-energy electron diffraction, grazing incidence X-ray diffraction, scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. On a clean Si(113) surface Ge preferentially nucleates at surface step edges and forms a wetting layer exhibiting a Ge-(2 x 2) surface reconstruction. With increasing growth temperature the Ge islands are elongated in the [33 anti 2] direction. Simultaneously, the average island size increases with decreasing island density. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. At 600 C the Si concentration of the islands amounts to about 41% and the residual lattice strain of the islands is found to about 23 %. The adsorption of Gallium on a clean Si(113) substrate leads to the formation of well ordered surface facets in the [1 anti 10] direction with a periodicity of about 43 nm in the [33 anti 2] direction. From reciprocal space maps in different ({kappa} {sub perpendicular} {sub to} -{kappa} {sub parallel}) planes both facet angles are determined to be about 9.8 with respect to the [113] direction. Thus the facet orientations are identified to be (112) and (115), showing (6 x 1) and (4 x 1) surface reconstructions, respectively. Ge deposition on the faceted Si(113) leads to a high density of ordered 3D Ge nano-islands beaded at the surface facets. The size of these islands is

  18. Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

    Science.gov (United States)

    Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

    2014-05-01

    A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

  19. Crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound

    Energy Technology Data Exchange (ETDEWEB)

    Gil, A., E-mail: a.gil@ajd.czest.pl [Faculty of Mathematics and Natural Sciences, Jan Długosz University in Częstochowa, Armii Krajowej 13/15, 42-200 Częstochowa (Poland); Hoser, A. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14-109 Berlin (Germany); Penc, B.; Szytuła, A. [M. Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków (Poland)

    2013-10-15

    The crystal and magnetic structure of polycrystalline TbFe{sub 0.25}Ge{sub 2} sample have been determined. X-ray and neutron diffraction studies indicate that this compound has the orthorhombic CeNiSi{sub 2}-type crystal structure (space group Cmcm). The magnetic ordering, based on the neutron diffraction data in low temperature, is described by two components: a collinear antiferromagnetic G-type and a cosine-wave modulated one. In the collinear G-type structure the Tb magnetic moment is equal to 3.81(5) µ{sub B} and it is parallel to the c-axis. The modulated structure is described by the propagation vector k=(0.460(8), 0, 0.305(1)), the Tb magnetic moment equals 7.75(8) µ{sub B,} lies in b–c and forms an angle 23(2)° with the c-axis. The collinear component decreases to zero at 22.6 K while the modulated one at 190.8 K. - Highlights: • We determine crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound. • We compare the results with other TbT{sub x}Ge{sub 2} compounds. • We observe the complex magnetic structure in TbFe{sub 0.25}Ge{sub 2} with two components: collinear and cosine-wave modulated. • T (3d) element have got significant influence on the interactions in Tb sublattice.

  20. Coherent Pair Production by Photons in the 20-170 GeV Energy Range Incident on Crystals and Birefringence

    CERN Document Server

    Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.

    2003-01-01

    The cross section for coherent pair production by linearly polarised photons in the 20-170 GeV energy range was measured for photon aligned incidence on ultra-high quality diamond and germanium crystals. The theoretical description of coherent bremsstrahlung and coherent pair production phenomena is an area of active theoretical debate and development. However, under our experimental conditions, the theory predicted the combined cross section and polarisation experimental observables very well indeed. In macroscopic terms, our experiment measured a birefringence effect in pair production in a crystal. This study of this effect also constituted a measurement of the energy dependent linear polarisation of photons produced by coherent bremsstrahlung in aligned crystals. New technologies for manipulating high energy photon beams can be realised based on an improved understanding of QED phenomena at these energies. In particular, this experiment demonstrates an efficient new polarimetry technique. The pair product...

  1. Crystal Structure of Magnetoelectric Ba2MnGe2O7 at Room and Low Temperatures by Neutron Diffraction.

    Science.gov (United States)

    Sazonov, Andrew; Hutanu, Vladimir; Meven, Martin; Roth, Georg; Georgii, Robert; Masuda, Takatsugu; Náfrádi, Bálint

    2018-04-09

    For a symmetry-consistent theoretical description of the ferroelectric phase of Ba 2 MnGe 2 O 7 melilite compound, a precise knowledge of its crystal structure is a prerequisite. Here we report results of single-crystal neutron diffraction experiments on Ba 2 MnGe 2 O 7 at room (300 K) and low (10 K) temperatures. The structural model based on the tetragonal space group P4̅2 1 m describes the Ba 2 MnGe 2 O 7 symmetry both at room and low temperatures. We found reflections forbidden in the typical P4̅2 1 m melilite-type structure. A comparison of the experimental data collected by means of both thermal and cold neutrons with simulated multiple diffraction patterns allows us to unambiguously demonstrate that forbidden peaks originate from multiple diffraction (Renninger effect) rather than from real symmetry lowering. The precise structural parameters at 300 and 10 K are presented for the first time and compared with those of other magnetoelectric melilite-type germanates.

  2. Research on the EPR parameters and local structure of Cr{sup 4+} ion at the tetragonal Ge{sup 4+} site in ZnGeP{sub 2} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiao-Xuan [Department of Physics, Civil Aviation Flight University of China, Guanghan (China); Zheng, Wen-Chen, E-mail: zhengwc1@163.com [Department of Material Science, Sichuan University, Chengdu (China)

    2015-09-15

    The electron paramagnetic resonance (EPR) parameters (g factors g{sub //}, g{sub ⊥} and zero-field splitting D) of Cr{sup 4+} ion at the tetragonal Ge{sup 4+} site in ZnGeP{sub 2} crystal are calculated from the high-order perturbation formulas. These formulas consist of the contributions from two mechanisms, the usually-used crystal-field (CF) mechanism (concerning CF excited states) in the CF theory and the frequently-ignored charge-transfer (CT) mechanism (concerning CT excited states). The calculated results are reasonably consistent with the experimental values. The calculations show that the contributions to EPR parameters from the CT mechanism are important for the high valence state d{sup n} ion (e.g., Cr{sup 4+} studied here) in the covalence crystal (e.g., semiconductors). The local structure of Cr{sup 4+} impurity center in ZnGeP{sub 2} crystal is also estimated through the calculations. It is suggested that the MP{sub 4} tetrahedral cluster in ZnGeP{sub 2}:Cr{sup 4+} crystal changes from the slightly tetragonally-elongated in the host crystal to the slightly tetragonally-compressed in the Cr{sup 4+} impurity center because of the impurity-induced local angular distortion.

  3. Crystal phase-based epitaxial growth of hybrid noble metal nanostructures on 4H/fcc Au nanowires

    Science.gov (United States)

    Lu, Qipeng; Wang, An-Liang; Gong, Yue; Hao, Wei; Cheng, Hongfei; Chen, Junze; Li, Bing; Yang, Nailiang; Niu, Wenxin; Wang, Jie; Yu, Yifu; Zhang, Xiao; Chen, Ye; Fan, Zhanxi; Wu, Xue-Jun; Chen, Jinping; Luo, Jun; Li, Shuzhou; Gu, Lin; Zhang, Hua

    2018-03-01

    Crystal-phase engineering offers opportunities for the rational design and synthesis of noble metal nanomaterials with unusual crystal phases that normally do not exist in bulk materials. However, it remains a challenge to use these materials as seeds to construct heterometallic nanostructures with desired crystal phases and morphologies for promising applications such as catalysis. Here, we report a strategy for the synthesis of binary and ternary hybrid noble metal nanostructures. Our synthesized crystal-phase heterostructured 4H/fcc Au nanowires enable the epitaxial growth of Ru nanorods on the 4H phase and fcc-twin boundary in Au nanowires, resulting in hybrid Au-Ru nanowires. Moreover, the method can be extended to the epitaxial growth of Rh, Ru-Rh and Ru-Pt nanorods on the 4H/fcc Au nanowires to form unique hybrid nanowires. Importantly, the Au-Ru hybrid nanowires with tunable compositions exhibit excellent electrocatalytic performance towards the hydrogen evolution reaction in alkaline media.

  4. Crystal synthesis and effects of epitaxial perovskite manganite underlayer conditions on characteristics of ZnO nanostructured heterostructures.

    Science.gov (United States)

    Liang, Yuan-Chang; Hu, Chia-Yen; Zhong, Hua; Wang, Jyh-Liang

    2013-03-21

    This study presents the synthesis of high-density aligned wurtzite ZnO nanostructures using thermal evaporation on perovskite (La,Sr)MnO3(LSMO) epitaxy to form a heterostructure without the assistance of metallic catalysis. LSMO epitaxial films are RF-sputtered with various crystal qualities to examine the correlation between the interface and electrical characteristics of the heterostructures. The ZnO nanostructures-LSMO epitaxial heterostructures show electrical rectifying behavior without inserting an ultrathin insulating layer at the hetero-interface. Misfit strain, intrinsic strain, and crystal defects are major factors in causing a phase separation in the as-prepared manganite LSMO epitaxial films. The coexistence of a charge-ordered insulating domain and a ferromagnetic metallic domain causes inhomogeneous electrical contact at the ZnO-LSMO heterointerfaces, further deteriorating the junction characteristics. A high-temperature annealing procedure and moderate LSMO epitaxy film thickness are required for the construction of an efficient ZnO nanostructures-LSMO epitaxy junction.

  5. Band structure of semiconductor compounds of Mg sub 2 Si and Mg sub 2 Ge with strained crystal lattice

    CERN Document Server

    Krivosheeva, A V; Shaposhnikov, V L; Krivosheev, A E; Borisenko, V E

    2002-01-01

    The effect of isotopic and unaxial deformation of the crystal lattice on the electronic band structure of indirect band gap semiconductors Mg sub 2 Si and Mg sub 2 Ge has been simulated by means of the linear augmented plane wave method. The reduction of the lattice constant down to 95 % results in a linear increase of the direct transition in magnesium silicide by 48%. The stresses arising under unaxial deformation shift the bands as well as result in splitting of degenerated states. The dependence of the interband transitions on the lattice deformation is nonlinear in this case

  6. Crystallization Kinetics of Supercooled Liquid Ge-Sb Based on Ultrafast Calorimetry

    NARCIS (Netherlands)

    Chen, Bin; Momand, Jamo; Vermeulen, Paul A.; Kooi, Bart J.

    The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-change memory technology, and their study is also of interest to advance the understanding of crystallization in general. Research on crystallization of PCMs remains challenging because of the short

  7. Preparation, crystal structure and physical properties of the superconducting cage compound Ba{sub 3}Ge{sub 16}Ir{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Duong Nguyen, Hong; Prots, Yurii; Schnelle, Walter; Boehme, Bodo; Baitinger, Michael; Grin, Yuri [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Noethnitzer Str. 40, 01187 Dresden (Germany); Paschen, Silke [Institut fuer Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstrasse 8-10, 1040 Wien (Austria)

    2014-04-15

    The cage compound Ba{sub 3}Ge{sub 16}Ir{sub 4} crystallizes with the Ba{sub 3}Ge{sub 16}Rh{sub 4} type of crystal structure, which represents a hierarchical derivative of the BaAl{sub 4} type. The crystal structure [Pearson symbol tI46, space group I4/mmm; a = 6.5312(2) Aa, c = 22.2845(6) Aa] was refined from single-crystal X-ray diffraction data. The phase was obtained after 10 d at 910 C with small impurities of clathrate-I, BaGe{sub 7}Ir{sub 2} and α-Ge remaining at the grain boundaries. Ba{sub 3}Ge{sub 16}Ir{sub 4} is a Pauli-paramagnetic metal, which becomes superconducting below T{sub c} = 5.1 K. Electronic structure and analysis of the chemical bonding were performed based on density functional theory calculations. The physical properties are discussed in comparison to the isotypic phase Ba{sub 3}Ge{sub 16}Rh{sub 4}. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Wave-dispersive x-ray spectrometer for simultaneous acquisition of several characteristic lines based on strongly and accurately shaped Ge crystal

    International Nuclear Information System (INIS)

    Hayashi, Kouichi; Nakajima, Kazuo; Fujiwara, Kozo; Nishikata, Susumu

    2008-01-01

    Si and Ge are widely used as analyzing crystals for x-rays. Drastic and accurate shaping of Si or Ge gives significant advance in the x-ray field, although covalently bonded Si or Ge crystals have long been believed to be not deformable to various shapes. Recently, we developed a deformation technique for obtaining strongly and accurately shaped Si or Ge wafers of high crystal quality, and the use of the deformed wafer made it possible to produce fine-focused x-rays. In the present study, we prepared a cylindrical Ge wafer with a radius of curvature of 50 mm, and acquired fluorescent x-rays simultaneously from four elements by combining the cylindrical Ge wafer with a position-sensitive detector. The energy resolution of the x-ray fluorescence spectrum was as good as that obtained using a flat single crystal, and its gain was over 100. The demonstration of the simultaneous acquisition of high-resolution x-ray fluorescence spectra indicated various possibilities of x-ray spectrometry, such as one-shot x-ray spectroscopy and highly efficient wave-dispersive x-ray spectrometers

  9. Plasmonic enhancement of second harmonic generation from nonlinear RbTiOPO4 crystals by aggregates of silver nanostructures

    DEFF Research Database (Denmark)

    Sánchez-García, Laura; Tserkezis, Christos; Ramírez, Mariola O

    2016-01-01

    We demonstrate a 60–fold enhancement of the second harmonic generation (SHG) response at the nanoscale in a hybrid metal-dielectric system. By using complex silver nanostructures photochemically deposited on the polar surface of a ferroelectric crystal, we tune the plasmonic resonances from...... the visible to the near-infrared (NIR) spectral region, matching either the SH or the fundamental frequency. In both cases the SHG signal at the metal-dielectric interface is enhanced, although with substantially different enhancement values: around 5 times when the plasmonic resonance is at the SH frequency...... or up to 60 times when it matches the fundamental NIR radiation. The results are consistent with the more spatially-extended near-field response of complex metallic nanostructures and can be well explained by taking into account the quadratic character of the SHG process. The work points out...

  10. Resolving Crystallization Kinetics of GeTe Phase-Change Nanoparticles by Ultrafast Calorimetry

    NARCIS (Netherlands)

    Chen, Bin; de Wal, Dennis; ten Brink, Gert H.; Palasantzas, George; Kooi, Bart J.

    Chalcogenitle-based phase change materials (PCMs) are promising candidates for the active element in novel electrical nonvolatile memories and have been applied successfully its rewritable optical disks. Nanostructured PCMs are considered as the next generation building blocks for their low power

  11. Size-dependent and tunable crystallization of GeSbTe phasechange nanoparticles

    NARCIS (Netherlands)

    Chen, Bin; ten Brink, Gerrit; Palasantzas, Georgios; Kooi, Bart

    2016-01-01

    Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in

  12. Mirroring of 400 GeV/c protons by an ultra-thin straight crystal

    CERN Document Server

    Scandale, W; Butcher, M; Cerutti, F; Gilardoni, S; Lechner, A; Losito, R; Masi, A; Metral, E; Mirarchi, D; Montesano, S; Redaelli, S; Smirnov, G; Bagli, E; Bandiera, L; Baricordi, S; Dalpiaz, P; Germogli, G; Guidi, V; Mazzolari, A; Vincenzi, D; Claps, G; Dabagov, S; Hampai, D; Murtas, F; Cavoto, G; Garattini, M; Iacoangeli, F; Ludovici, L; Santacesaria, R; Valente, P; Galluccio, F; Afonin, A G; Chesnokov, Yu A; Chirkov, P N; Maisheev, V A; Sandomirskiy, Yu E; Yazynin, I A; Kovalenko, A D; Taratin, A M; Gavrikov, Yu A; Ivanov, Yu M; Lapina, L P; Ferguson, W; Fulcher, J; Hall, G; Pesaresi, M; Raymond, M

    2014-01-01

    Channeling is the confinement of the trajectory of a charged particle in a crystalline solid. Positively charged particles channeled between crystal planes oscillate with a certain oscillation length, which depends on particle energy. A crystal whose thickness is half the oscillation length for planar channeling may act as a mirror for charged particles. If the incident angle of the particle trajectory with the crystal plane is less than the critical angle for channeling, under-barrier particles undergo half an oscillation and exit the crystal with the reversal of their transverse momentum, i.e., the particles are “mirrored” by the crystal planes. Unlike the traditional scheme relying on millimeter-long curved crystals, particle mirroring enables beam steering in high-energy accelerators via interactions with micrometer-thin straight crystal. The main advantage of mirroring is the interaction with a minimal amount of material along the beam, thereby decreasing unwanted incoherent nuclear interactions. The...

  13. Controlling Lateral Fano Interference Optical Force with Au-Ge2Sb2Te5 Hybrid Nanostructure

    DEFF Research Database (Denmark)

    Cao, Tun; Bao, Jiaxin; Mao, Libang

    2016-01-01

    We numerically demonstrate that a pronounced dipole-quadrupole (DQ) Fano resonance (FR) induced lateral force can be exerted on a dielectric particle 80 nm in radius (R-sphere = 80 nm) that is placed 5 nm above an asymmetric bow-tie nanoantenna array based on Au/Ge2Sb2Te5 dual layers. The DQ-FR-i...

  14. In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

    International Nuclear Information System (INIS)

    Kato, Naohiko; Konomi, Ichiro; Seno, Yoshiki; Motohiro, Tomoyoshi

    2005-01-01

    The crystallization processes of the Ge 2 Sb 2 Te 5 thin film used for PD and DVD-RAM were studied in its realistic optical disk film configurations for the first time by X-ray diffraction using an intense X-ray beam of a synchrotron orbital radiation facility (SPring-8) and in situ quick detection with a Position-Sensitive-Proportional-Counter. The dependence of the amorphous-to-fcc phase-change temperature T 1 on the rate of temperature elevation R et gave an activation energy E a : 0.93 eV much less than previously reported 2.2 eV obtained from a model sample 25-45 times thicker than in the real optical disks. The similar measurement on the Ge 4 Sb 1 Te 5 film whose large reflectance change attains the readability by CD-ROM drives gave E a : 1.13 eV with larger T 1 than Ge 2 Sb 2 Te 5 thin films at any R et implying a lower sensitivity in erasing as well as a better data stability of the phase-change disk

  15. Compositional uniformity of a Si0.5Ge0.5 crystal grown on board the International Space Station

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Inatomi, Y.; Tsukada, T.; Miyata, H.; Tanaka, R.; Yoshikawa, J.; Kihara, T.; Tomioka, H.; Shibayama, H.; Kubota, Y.; Warashina, Y.; Ishizuka, Y.; Harada, Y.; Wada, S.; Ito, T.; Nagai, N.; Abe, K.; Sumioka, S.; Takayanagi, M.; Yoda, S.

    2015-06-01

    A Si0.5Ge0.5 crystal was grown on board the International Space Station (ISS) using the traveling liquidus-zone method. Average Ge concentration was 49±2 at% for the growth length of 14.5 mm. Radial compositional uniformity was excellent especially between the growth length of 3 and 9 mm; concentration fluctuation was less than 1 at%. In this experiment, cartridge surface temperatures were monitored and heater temperatures were adjusted based on the monitored temperatures for improving compositional uniformity of a grown crystal. A step temperature change by 1 °C was imposed for adjusting heater temperatures. This procedure made it possible to observe growth interface shape; striations due to heater temperature change were observed by a backscattered electron image. Growth rates were precisely determined by the relation between interval of heater temperature change and the distance between striations. Based on the measured growth rates, two-dimensional growth model for the traveling liquidus-zone method was discussed.

  16. Crystallization behavior of 80GeS{sub 2}.20Ga{sub 2}S{sub 3} chalcogenide glass

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Changgui [Wuhan University of Technology, Ministry of Education, Key Laboratory of Silicate Materials Science and Engineering, Wuhan, Hubei (China); Universite de Rennes 1, Laboratoire des Verres et Ceramiques, UMR-CNRS 6226, Sciences chimiques de Rennes, Rennes Cedex (France); Calvez, Laurent; Roze, Mathieu; Zhang, Xianghua [Universite de Rennes 1, Laboratoire des Verres et Ceramiques, UMR-CNRS 6226, Sciences chimiques de Rennes, Rennes Cedex (France); Tao, Haizheng; Zhao, Xiujian [Wuhan University of Technology, Ministry of Education, Key Laboratory of Silicate Materials Science and Engineering, Wuhan, Hubei (China)

    2009-11-15

    Glass-ceramics were fabricated from the 80GeS{sub 2}.20Ga{sub 2}S{sub 3} chalcogenide glass using an appropriate heat-treatment at a fairly low temperature (T{sub g}+30 C) for different durations. Compared with the base glass, they present much-improved thermal shock resistance and fracture toughness, and meanwhile remain an excellent mid-IR transmission in 2-10-{mu}m spectral region. XRD results indicate that the enhanced mechanical properties are mainly due to the appearance of Ga{sub 2}S{sub 3} crystals, and only a very small amount of GeS{sub 2} was precipitated on the surface. Bulk and powder samples heat-treated at 458 C for different durations were used to study the evolution of the two crystallization peaks using DSC measurement. It is found that the precipitation of Ga{sub 2}S{sub 3} phase is responsible for the exotherm of first crystallization peak and that of GeS{sub 2} phase for the second one. The crystallization mechanism was also examined using the nonisothermal method, and the considerably low activation energy (E{sub c}) and high crystallization rate constant (K) for the first crystallization peak illustrate a much easier precipitation of Ga{sub 2}S{sub 3} phase than that of GeS{sub 2} phase, which is in good accordance with the ceramization process. (orig.)

  17. Single-crystal X-ray diffraction study of SrGeO3 high-pressure perovskite phase at 100 K

    Science.gov (United States)

    Nakatsuka, Akihiko; Arima, Hiroshi; Ohtaka, Osamu; Fujiwara, Keiko; Yoshiasa, Akira

    2017-10-01

    Single-crystal X-ray diffraction study of SrGeO3 perovskite (cubic; space group Pmɜ¯m) synthesized at 6 GPa and 1223 K was conducted at a low temperature of 100 K. The residual electron density revealed the presence of the bonding electron at the center of the Ge-O bond, in accordance with our previous conclusion that the Ge-O bond is strongly covalent. From comparison with our previous structure-refinement result at 296 K, the mean square displacement (MSD) of the O atom in the direction of the Ge-O bond is suggested to exhibit no significant temperature dependence, in contrast to that in the direction perpendicular to the bond. Thus, the strong covalency of the Ge-O bond can have a large influence on the temperature dependence of thermal vibration of the O atom.

  18. Low-temperature magnetic and transport properties of single-crystal CeCoGe

    Czech Academy of Sciences Publication Activity Database

    ElMassalami, M.; Rapp, R.E.; Sinnecker, J. P.; Andreev, Alexander V.; Prokleška, J.

    2008-01-01

    Roč. 20, č. 46 (2008), 465223/1-465223/5 ISSN 0953-8984 R&D Projects: GA ČR(CZ) GA202/06/0185 Institutional research plan: CEZ:AV0Z10100520 Keywords : specific heat * magnetoresistivity * magnetic susceptibility * CeCoGe Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.900, year: 2008

  19. Piezoelectric properties of Sr3 Ga2 Ge4 O14 single crystals

    Indian Academy of Sciences (India)

    ... determined with resonance and anti-resonance frequencies method by using the impedance analyzer (Agilent 4294A). The results show that the piezoelectric strain constants and electromechanical coupling factors of SGG single crystal are higher than those of LGS single crystals making it a potential substrate material ...

  20. Advances in optoplasmonic sensors - combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

    Science.gov (United States)

    Xavier, Jolly; Vincent, Serge; Meder, Fabian; Vollmer, Frank

    2018-01-01

    Nanophotonic device building blocks, such as optical nano/microcavities and plasmonic nanostructures, lie at the forefront of sensing and spectrometry of trace biological and chemical substances. A new class of nanophotonic architecture has emerged by combining optically resonant dielectric nano/microcavities with plasmonically resonant metal nanostructures to enable detection at the nanoscale with extraordinary sensitivity. Initial demonstrations include single-molecule detection and even single-ion sensing. The coupled photonic-plasmonic resonator system promises a leap forward in the nanoscale analysis of physical, chemical, and biological entities. These optoplasmonic sensor structures could be the centrepiece of miniaturised analytical laboratories, on a chip, with detection capabilities that are beyond the current state of the art. In this paper, we review this burgeoning field of optoplasmonic biosensors. We first focus on the state of the art in nanoplasmonic sensor structures, high quality factor optical microcavities, and photonic crystals separately before proceeding to an outline of the most recent advances in hybrid sensor systems. We discuss the physics of this modality in brief and each of its underlying parts, then the prospects as well as challenges when integrating dielectric nano/microcavities with metal nanostructures. In Section 5, we hint to possible future applications of optoplasmonic sensing platforms which offer many degrees of freedom towards biomedical diagnostics at the level of single molecules.

  1. Development of Nanostructured Water Treatment Membranes Based on Thermotropic Liquid Crystals: Molecular Design of Sub-Nanoporous Materials.

    Science.gov (United States)

    Sakamoto, Takeshi; Ogawa, Takafumi; Nada, Hiroki; Nakatsuji, Koji; Mitani, Masato; Soberats, Bartolome; Kawata, Ken; Yoshio, Masafumi; Tomioka, Hiroki; Sasaki, Takao; Kimura, Masahiro; Henmi, Masahiro; Kato, Takashi

    2018-01-01

    Supply of safe fresh water is currently one of the most important global issues. Membranes technologies are essential to treat water efficiently with low costs and energy consumption. Here, the development of self-organized nanostructured water treatment membranes based on ionic liquid crystals composed of ammonium, imidazolium, and pyridinium moieties is reported. Membranes with preserved 1D or 3D self-organized sub-nanopores are obtained by photopolymerization of ionic columnar or bicontinuous cubic liquid crystals. These membranes show salt rejection ability, ion selectivity, and excellent water permeability. The relationships between the structures and the transport properties of water molecules and ionic solutes in the sub-nanopores in the membranes are examined by molecular dynamics simulations. The results suggest that the volume of vacant space in the nanochannel greatly affects the water and ion permeability.

  2. Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

    International Nuclear Information System (INIS)

    Zhong Minjian; Guo Guanglei; Yang Junyi; Ma Ninghua; Ye Guo; Ma Hongliang; Guo Xiaodong; Li Ruxin

    2008-01-01

    This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragg-like grating is formed by moving the sample at a speed of 10 μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal

  3. Irradiation induced defects in deformed $Ni_{3}Ge$ and $Ni_{3}Al$ single crystals

    CERN Document Server

    Murakumo, T; Miyahara, A; Hannuki, T; Sato, A

    2000-01-01

    The effect of plastic deformation on the formation of point defects and defect clusters by electron irradiation has been studied in Ll /sub 2/ ordered Ni/sub 3/Ge and Ni/sub 3/Al by high voltage electron microscopy. It is found that defects are formed preferentially along the Burgers vector directions as linear lines and grow into linear chains of clusters by electron irradiation. This phenomenon is explained by preferential generation of the defects along the antiphase boundary (APE) tubes, in specimens deformed both below and above the peak temperature T/sub p/. Based on three-dimensional analyses of the defect distribution, the formation mechanism of the APE tubes is discussed with particular reference to superdislocation motion and the strengthening of the Ll/sub 2/ ordered compounds of Ni /sub 3/Ge and Ni/sub 3/Al. (44 refs).

  4. Magnetic and crystal structures of Er5(SixGe1-x)4

    International Nuclear Information System (INIS)

    Ritter, C; Magen, C; Morellon, L; Algarabel, P A; Ibarra, M R; Pecharsky, V K; Tsokol, A O; Gschneidner, K A Jr

    2006-01-01

    The magnetic and crystallographic structures in the Er 5 (Si x Ge 1-x ) 4 system have been investigated for x = 1,0.875 and 0 using macroscopic magnetic measurements and neutron powder diffraction. The existence of a first-order structural transformation from a high-temperature orthorhombic O (I) structure to a low-temperature monoclinic M polymorph in the temperature range 160-220 K has been confirmed for Er 5 Si 4 . In contrast, compounds with x = 0.875 and 0 retain their room-temperature crystallographic phases-M and O (II), respectively-on cooling down to 2 K. Both Si-containing alloys adopt canted ferromagnetic structures below T C ∼ 30 K with an easy magnetization direction along the b-axis and a weak antiferromagnetic coupling in the (010) plane. The Er 5 Ge 4 compound orders antiferromagnetically at T N = 14 K in a complex incommensurate structure

  5. Crystallization behaviour of Ge17Sb23Se60 thin films

    Czech Academy of Sciences Publication Activity Database

    Svoboda, R.; Přikryl, J.; Barták, J.; Vlček, Milan; Málek, J.

    2014-01-01

    Roč. 94, č. 12 (2014), s. 1301-1310 ISSN 1478-6435 Institutional support: RVO:61389013 Keywords : crystallization kinetics * DSC * thin film Subject RIV: CA - Inorganic Chemistry Impact factor: 1.825, year: 2014

  6. Low-temperature (<200 oC solid-phase crystallization of high substitutional Sn concentration (∼10% GeSn on insulator enhanced by weak laser irradiation

    Directory of Open Access Journals (Sweden)

    Kenta Moto

    2017-07-01

    Full Text Available Low temperature (8% on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent thermal annealing is developed. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with weak laser fluence, complete crystallization of GeSn films is achieved by subsequent thermal annealing at ∼170 oC without incubation time. In addition, the quality of GeSn films obtained by this method is higher compared with conventional growth techniques such as melting growth by pulsed laser annealing or solid-phase crystallization (SPC without pre-laser irradiation. Substitutional Sn concentrations in the grown layers estimated by Raman spectroscopy measurements are 8-10%, which far exceed thermal equilibrium solid-solubility of Sn in Ge (∼2%. These phenomena are explained by generation of a limited number of nuclei by weak laser irradiation and lateral SPC by subsequent thermal annealing. This method will facilitate realization of next-generation high performance devices on flexible insulating substrates.

  7. Investigations of the coherent hard photon yields from (50-300) GeV/c electrons/positrons in the strong crystalline fields of diamond, Si, and Ge crystals

    CERN Multimedia

    The aim of this experiment is to measure the influence of strong fields on QED-processes like: Emission of coherent radiation and pair-production when multi-hundred GeV electrons/positrons and photons penetrate single crystals near axial/planar directions. The targets will be diamond, Si, Ge and W crystals.\\\\\\\\ QED is a highly developed theory and has been investigated experimentally in great detail. In recent years it has become technically possible to investigate QED-processes in very strong electromagnetic fields around the characteristic strong field E$_{0}$ = m$^{2}$c$^{3}$/eh = 1.32.10$^{16}$ V/cm. The work of such a field over the Compton length equals the electron mass. The theoretical description of QED in such fields is beyond the framework of perturbation theory. Such fields are only obtained in laboratories for a) heavy ion collisions b) interactions of multi-GeV electrons with extremely intense laser fields and in oriented crystals. In fact it turns out that crystals are unique for this type of e...

  8. The crystal structure and electronic properties of a new metastable non-stoichiometric BaAl{sub 4}-type compound crystallized from amorphous La{sub 6}Ni{sub 34}Ge{sub 60} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, Masashi [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Suzuki, Shoichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Ohsuna, Tetsu [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Matsubara, Eiichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Endo, Satoshi [Center for Low Temperature Science, Tohoku University, Sendai, Katahira 980-8577 (Japan); Inoue, Akihisa [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan)

    2004-11-17

    A new metastable La-Ge-Ni ternary BaAl{sub 4}-type (ThCr{sub 2}Si{sub 2}-type) compound, of which the space group is I4/mmm is synthesized. It is obtained by a polymorphic transformation from an La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy on crystallizing. The formula of the compound is (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2}. This indicates that it is highly non-stoichiometric compared to the stoichiometric LaNi{sub 2}Ge{sub 2}. It is found that the c-axis lattice parameter of this compound is much longer than that of LaNi{sub 2}Ge{sub 2}. It should be noted that the longer c-axis unit cell parameter is attributable only to the longer interlayer distance between Ge site and Ni site layers. The temperature dependences of electrical resistivity and thermoelectric power of the (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2} compound and La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy are also clarified. The comparison of these electronic properties between the two materials indicates that sp-electrons mainly contribute to the density of states around the Fermi level of this compound.

  9. Realization of Artificial Ice Systems for Magnetic Vortices in a Superconducting MoGe Thin Film with Patterned Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Latimer, M. L.; Berdiyorov, G. R.; Xiao, Z. L.; Peeters, F. M.; Kwok, W. K.

    2013-08-05

    We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.

  10. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    International Nuclear Information System (INIS)

    Alireza, Samavati; Othaman, Z.; Ghoshal, S. K.

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ∼0.29 eV in the PL peak is observed with increasing annealing temperature. (cross-disciplinary physics and related areas of science and technology)

  11. Selective Chemical Vapor Deposition Growth of Cubic FeGe Nanowires That Support Stabilized Magnetic Skyrmions.

    Science.gov (United States)

    Stolt, Matthew J; Li, Zi-An; Phillips, Brandon; Song, Dongsheng; Mathur, Nitish; Dunin-Borkowski, Rafal E; Jin, Song

    2017-01-11

    Magnetic skyrmions are topologically stable vortex-like spin structures that are promising for next generation information storage applications. Materials that host magnetic skyrmions, such as MnSi and FeGe with the noncentrosymmetric cubic B20 crystal structure, have been shown to stabilize skyrmions upon nanostructuring. Here, we report a chemical vapor deposition method to selectively grow nanowires (NWs) of cubic FeGe out of three possible FeGe polymorphs for the first time using finely ground particles of cubic FeGe as seeds. X-ray diffraction and transmission electron microscopy (TEM) confirm that these micron-length NWs with ∼100 nm to 1 μm diameters have the cubic B20 crystal structure. Although Fe 13 Ge 8 NWs are also formed, the two types of NWs can be readily differentiated by their faceting. Lorentz TEM imaging of the cubic FeGe NWs reveals a skyrmion lattice phase under small applied magnetic fields (∼0.1 T) at 233 K, a skyrmion chain state at lower temperatures (95 K) and under high magnetic fields (∼0.4 T), and a larger skyrmion stability window than bulk FeGe. This synthetic approach to cubic FeGe NWs that support stabilized skyrmions opens a route toward the exploration of new skyrmion physics and devices based on similar nanostructures.

  12. Avian Nanostructured Tissues as Models for New Defensive Coatings and Photonic Crystal Fibers

    Science.gov (United States)

    2012-03-31

    allopatric speciation [58, 59]. If not, then the colours themselves may drive speciation through drift, similar to that seen in Carduelis finches [60], and...genus Carduelis . Evolution 62(4), 753-762. 46 Figure 1. Feather nanostructure and colour-producing mechanism in iridescent duck feathers

  13. Disorder-induced broadening of transverse acoustic phonons in SixGe1-x mixed crystals

    Czech Academy of Sciences Publication Activity Database

    Beraud, A.; Kulda, Jiří; Yonenaga, I.; Foret, M.; Salce, B.; Courtens, E.

    2004-01-01

    Roč. 350, č. 1 (2004), s. 254-257 ISSN 0921-4526 R&D Projects: GA AV ČR KSK1010104 Keywords : disordered crystals * acoustic branches Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.679, year: 2004

  14. Bridgman growth and defects of Nd : Sr3Ga2Ge4O14 laser crystals

    Indian Academy of Sciences (India)

    Unknown

    . ... Nd3+ : SGG crystal; Bridgman method; EPMA; inclusion; dislocation. ... A pair of Pt–. Pt/Rh thermocouples was installed in the tube to measure the temperature of the melt near the top of the seed. The. Bridgman growth was carried out in a ...

  15. Crystallization processes in Ge2Sb2Se4Te glass

    Czech Academy of Sciences Publication Activity Database

    Svoboda, R.; Bezdička, Petr; Gutwirth, J.; Malek, J.

    2015-01-01

    Roč. 61, JAN (2015), s. 207-214 ISSN 0025-5408 Institutional support: RVO:61388980 Keywords : Chalcogenides * Glass es * Differential scanning calorimetry (DSC) * X-ray diffraction * Crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015

  16. Investigation of the Electromagnetic Radiation Emitted by Sub-GeV Electrons in a Bent Crystal.

    Science.gov (United States)

    Bandiera, L; Bagli, E; Germogli, G; Guidi, V; Mazzolari, A; Backe, H; Lauth, W; Berra, A; Lietti, D; Prest, M; De Salvador, D; Vallazza, E; Tikhomirov, V

    2015-07-10

    The radiation emitted by 855 MeV electrons via planar channeling and volume reflection in a 30.5-μm-thick bent Si crystal has been investigated at the MAMI (Mainzer Mikrotron) accelerator. The spectral intensity was much more intense than for an equivalent amorphous material, and peaked in the MeV range in the case of channeling radiation. Differently from a straight crystal, also for an incidence angle larger than the Lindhard angle, the spectral intensity remains nearly as high as for channeling. This is due to volume reflection, for which the intensity remains high at a large incidence angle over the whole angular acceptance, which is equal to the bending angle of the crystal. Monte Carlo simulations demonstrated that incoherent scattering significantly influences both the radiation spectrum and intensity, either for channeling or volume reflection. In the latter case, it has been shown that incoherent scattering increases the radiation intensity due to the contribution of volume-captured particles. As a consequence, the experimental spectrum becomes a mixture of channeling and pure volume reflection radiations. These results allow a better understanding of the radiation emitted by electrons subjected to coherent interactions in bent crystals within a still-unexplored energy range, which is relevant for possible applications for innovative and compact x-ray or γ-ray sources.

  17. Simple, Green, and High-Yield Production of Boron-Based Nanostructures with Diverse Morphologies by Dissolution and Recrystallization of Layered Magnesium Diboride Crystals in Water.

    Science.gov (United States)

    Gunda, Harini; Das, Saroj Kumar; Jasuja, Kabeer

    2018-01-03

    Layered metal diborides that contain metal atoms sandwiched between boron honeycomb planes offer a rich opportunity to access graphenic forms of boron. We recently demonstrated that magnesium diboride (MgB 2 ) could be exfoliated by ultrasonication in water to yield boron-based nanosheets. However, knowledge of the fate of metal boride crystals in aqueous phases is still in its incipient stages. This work presents our preliminary findings on the discovery that MgB 2 crystals can undergo dissolution in water under ambient conditions to result in precursors (prenucleation clusters) that, upon aging, undergo nonclassical crystallization preferentially growing in lateral directions by two-dimensional (2D) oriented attachment. We show that this recrystallization can be utilized as an avenue to obtain a high yield (≈92 %) of boron-based nanostructures, including nanodots, nanograins, nanoflakes, and nanosheets. These nanostructures comprise boron honeycomb planes chemically modified with hydride and oxy functional groups, which results in an overall negative charge on their surfaces. This ability of MgB 2 crystals to yield prenucleation clusters that can self-seed to form nanostructures comprising chemically modified boron honeycomb planes presents a new facet to the physicochemical interaction of MgB 2 with water. These findings also open newer avenues to obtain boron-based nanostructures with tunable morphologies by varying the chemical milieu during recrystallization. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Crystal field interactions in DyFe2Si2 and DyFe2Ge2

    Science.gov (United States)

    Chatterji, A.; Saha, D. P.; Chatterjee, Reba; Mitra, S.

    2009-11-01

    Two sets of crystal field (CF) parameters have been proposed for DyFe2Si2, none of which could provide a simultaneous explanation of the available experimental data, particularly at low temperatures (below 100 K). The set derived from magnetic studies could not even explain the thermal variation of the magnetic specific heat reported in the same work. Although the set of CF parameters, obtained from a fit to the Mossbauer spectra, could provide a fairly good explanation of the thermal variation of the magnetic susceptibilities along the c-axis, it could not explain the observed thermal variation of other reported experimental findings. In the present work, an appraisal of the CF parameters proposed earlier has been done and a set of CF parameters has been derived, which provide a simultaneous explanation of all the available experimental data. The effect of substitution of Ge for Si on the magnetic properties and the magnetic specific heat of DyFe2Si2 has been studied in the framework of one electron crystal field model. The inelastic neutron scattering studies and EPR measurements are required to check the predicted Stark energies and the paramagnetic resonance g-values.

  19. Phase relations in the quasi-binary Cu{sub 2}GeS{sub 3}-ZnS and quasi-ternary Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems and crystal structure of Cu{sub 2}ZnGeS{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Parasyuk, O.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine)]. E-mail: oleg@lab.univer.lutsk.ua; Piskach, L.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Romanyuk, Y.E. [Advanced Photonics Laboratory, Institute of Imaging and Applied Optics, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Olekseyuk, I.D. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Zaremba, V.I. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya Str., 79005 L' viv (Ukraine); Pekhnyo, V.I. [V.I. Vernadskii Institute of General and Inorganic Chemistry, Ukrainian National Academy of Sciences, Palladina Ave 32-34, 03680 Kiev (Ukraine)

    2005-07-19

    The isothermal section of the Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems at 670K was constructed using X-ray diffraction analysis. At this temperature, two quaternary intermediate phases, Cu{sub 2}CdGeS{sub 4} and {approx}Cu{sub 8}CdGeS{sub 7}, exist in the Cu{sub 2}S-CdS-GeS{sub 2} system, and only one phase, Cu{sub 2}ZnGeS{sub 4}, exists in the Cu{sub 2}S-ZnS-GeS{sub 2} system. The phase diagram of the Cu{sub 2}GeS{sub 3}-ZnS system was constructed using differential-thermal analysis and X-ray diffraction, and the existence of Cu{sub 2}ZnGeS{sub 4} has been confirmed. It forms incongruently at 1359K. Powder X-ray diffraction was used to refine the crystal structure of Cu{sub 2}ZnGeS{sub 4}, which crystallizes in the tetragonal stannite-type structure at 670K (space group I4-bar 2m, a=0.534127(9)nm, c=1.05090(2)nm, R{sub I}=0.0477). The possibility of the formation of quaternary compounds in the quasi-ternary systems A{sup I}{sub 2}X-B{sup II}X-C{sup IV}X{sub 2}, where A{sup I}-Cu, Ag; B{sup II}-Zn, Cd, Hg; C{sup IV}-Si, Ge, Sn and X-S, Se, Te is discussed.

  20. Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5Nanowires.

    Science.gov (United States)

    Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

    2016-10-12

    A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge 2 Sb 2 Te 5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

  1. Beam extraction studies at 900 GeV using a channeling crystal

    Directory of Open Access Journals (Sweden)

    R. A. Carrigan, Jr.

    2002-04-01

    Full Text Available Luminosity-driven channeling extraction has been observed for the first time in a 900 GeV study at the Fermilab Tevatron. This experiment, Fermilab E853, demonstrated that useful TeV level beams can be extracted from a superconducting accelerator during high luminosity collider operations without unduly affecting the background at the collider detectors. Multipass extraction was found to increase the efficiency of the process significantly. The beam extraction efficiency was about 25%. Studies of time dependent effects found that the turn-to-turn structure was governed mainly by accelerator beam dynamics. Based on the results of this experiment, it is feasible to construct a parasitic 5–10 MHz proton beam from the Tevatron collider.

  2. Stability to irradiation of SiGe whisker crystals used for sensors of physical values

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2011-04-01

    Full Text Available An influence of g-irradiation (Co60 with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03 whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.

  3. Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Inatomi, Y.; Tsukada, T.; Adachi, S.; Miyata, H.; Tanaka, R.; Yoshikawa, J.; Kihara, T.; Tomioka, H.; Shibayama, H.; Kubota, Y.; Warashina, Y.; Sasaki, Y.; Ishizuka, Y.; Harada, Y.; Wada, S.; Harada, C.; Ito, T.; Takayanagi, M.; Yoda, S.

    2014-02-01

    An alloy semiconductor Si1-xGex (x~0.5) crystal was grown by the TLZ method in microgravity. Ge concentration was 48.5±1.5 at% for the whole region of 10 mm diameter and 17.2 mm long crystal. Compositional uniformity was established but the average concentration was a little deviated from the expected 50 at%. For further improving compositional uniformity and for obtaining Si0.5Ge0.5 crystals in microgravity, growth conditions were refined based on the measured axial compositional profile. In determining new growth conditions, difference in temperature gradient in a melt, difference in freezing interface curvature, and difference in melt back length of a seed between microgravity and terrestrial growth were taken into consideration.

  4. Crystallization and Thermoelectric Transport in Semiconductor Micro- and Nanostructures Under Extreme Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Gokirmak, Ali [Univ. of Connecticut, Storrs, CT (United States); Silva, Helena [Univ. of Connecticut, Storrs, CT (United States)

    2017-08-30

    This project focused on thermoelectric transport in semiconductor micro and nanostructures where moderate and typical operating voltages and currents lead to extreme thermal gradients and current densities. Models that describe behavior of semiconducting materials typically assume an equilibrium condition or slight deviations from it. In these cases the generation-recombination processes are assumed to have reached a local equilibrium for a given temperature. Hence, free carrier concentrations and their mobilities, band-gap, thermal conductivity, thermoelectric properties, mobility of atoms and mechanical properties of the material, can be described as a function of temperature. In the case of PN junctions under electrical bias, carrier concentrations can change up to ~ 1020 cm-3 and a drift-diffusion approximation is typically used to obtain the carrier concentrations while assuming that the material properties do not change. In non-equilibrium conditions, the assumption that the material properties remain the same may not be valid. While the increased conduction-band electron concentration may not have a drastic effect on the material, large hole concentration is expected to soften the material as ‘a hole’ comes into existence as a broken bond in the lattice. As the hole density approaches 1022 cm-3, the number of bonds holding the lattice together is significantly reduced, making it easier to break additional bonds, reduce band-gap and inhibit phonon transport. As these holes move away from where they were generated, local properties are expected to deviate significantly from the equilibrium case. Hence, temperature alone is not sufficient to describe the behavior of the material. The behavior of the solid material close to a molten region (liquid-solid interfaces) is also expected to deviate from the equilibrium case as a function of hole injection rate, which can be drastically increased or decreased in the presence of an electric field. In the past years

  5. First-principles approaches to intrinsic strength and deformation of materials: perfect crystals, nano-structures, surfaces and interfaces

    International Nuclear Information System (INIS)

    Ogata, Shigenobu; Umeno, Yoshitaka; Kohyama, Masanori

    2009-01-01

    First-principles studies on the intrinsic mechanical properties of various materials and systems through ab initio tensile and shear testing simulations based on density-functional theory are reviewed. For various materials, ideal tensile and shear strength and features of the deformation of bulk crystals without any defects have been examined, and the relation with the bonding nature has been analyzed. The surfaces or low-dimensional nano-structures reveal peculiar strength and deformation behavior due to local different bonding nature. For grain boundaries and metal/ceramic interfaces, tensile and shear behaviors depend on the interface bonding, which impacts on the research of real engineering materials. Remaining problems and future directions in this research field are discussed. (topical review)

  6. Designing novel Sn-Bi, Si-C and Ge-C nanostructures, using simple theoretical chemical similarities

    Directory of Open Access Journals (Sweden)

    Zdetsis Aristides

    2011-01-01

    Full Text Available Abstract A framework of simple, transparent and powerful concepts is presented which is based on isoelectronic (or isovalent principles, analogies, regularities and similarities. These analogies could be considered as conceptual extensions of the periodical table of the elements, assuming that two atoms or molecules having the same number of valence electrons would be expected to have similar or homologous properties. In addition, such similar moieties should be able, in principle, to replace each other in more complex structures and nanocomposites. This is only partly true and only occurs under certain conditions which are investigated and reviewed here. When successful, these concepts are very powerful and transparent, leading to a large variety of nanomaterials based on Si and other group 14 elements, similar to well known and well studied analogous materials based on boron and carbon. Such nanomaterias designed in silico include, among many others, Si-C, Sn-Bi, Si-C and Ge-C clusters, rings, nanowheels, nanorodes, nanocages and multidecker sandwiches, as well as silicon planar rings and fullerenes similar to the analogous sp2 bonding carbon structures. It is shown that this pedagogically simple and transparent framework can lead to an endless variety of novel and functional nanomaterials with important potential applications in nanotechnology, nanomedicine and nanobiology. Some of the so called predicted structures have been already synthesized, not necessarily with the same rational and motivation. Finally, it is anticipated that such powerful and transparent rules and analogies, in addition to their predictive power, could also lead to far-reaching interpretations and a deeper understanding of already known results and information.

  7. Facile and green fabrication of organic single-crystal hollow micro/nanostructures.

    Science.gov (United States)

    Yang, Jun; Chen, Yingzhi; Zhang, Xiujuan; Ou, Xuemei; Zhang, Xiaohong

    2011-07-15

    Under high humidity and appropriate temperature, tris (8-hydroxyquinoline) aluminum (Alq3) solid micro/nanostructures may be etched into hollow structures and still retain their crystalline structures and surface morphologies. The shapes and sizes of the hollow structures are easily adjusted by varying the experimental parameters. Throughout the entire process, water is introduced into the system instead of organic or corrosive solvents, making this method convenient and environmentally friendly; it can also be extended to application in other materials such as TCNQ.

  8. Radiation emission and its influence on the motion of multi-GeV electrons and positrons incident on a single diamond crystal

    CERN Document Server

    Kirsebom, K; Uggerhøj, Erik; Elsener, K; Ballestrero, S; Sona, P; Connell, S H; Sellschop, J P Friedel; Vilakazi, Z Z

    2001-01-01

    A few years ago the CERN NA-43 collaboration installed an upgraded detector system which allows a detailed analysis of the particle motion before, during and after penetration of a crystal. Also, essentially perfect diamond crystals were produced by the collaborators from Schonland Research Centre. These facts have led to new and very detailed investigations of QED-processes in strong crystalline fields. Along axial directions the radiation emission is enhanced by more than two orders of magnitude. For incidence on a 0.7 mm thick diamond crystal of well-aligned 149 GeV electrons, 35% give rise to a high energy photon peak at approximately=120 GeV. For 243 GeV electrons and approximately=200 GeV photons, this number decreases to 25%-which may be an indication of quantum suppression. Different measurements of the photon multiplicities show that in most cases positrons and electrons emit equal number of photons. The dramatic radiation emission leads to a strong reduction in transverse energy and all electrons in...

  9. Crystallizing Vanadium Pentoxide Nanostructures in the Solid-State Using Modified Block Copolymer and Chitosan Complexes

    Directory of Open Access Journals (Sweden)

    C. Diaz

    2015-01-01

    Full Text Available A systematic study of the synthesis of V2O5 nanostructured materials using macromolecular PS-co-4-PVP·(VCl3y and chitosan·(VCl3y complexes is presented. It is demonstrated that various coordination degrees of the metal into the polymeric chain specifically influence the product formation after pyrolysis. PS-co-4-PVP·(VCl3y and chitosan·(VCl3y complexes were prepared by simple coordination reaction of VCl3 with the respective polymer in molar ratios 1 : 1, 1 : 5, and 1 : 10 metal/polymer and characterized by elemental analysis, IR spectroscopy, and TGA/DSC analysis. Solid-state thermolysis of these precursors at several temperatures under air results in nanostructured V2O5 using all precursors. The size and shape of the nanostructured V2O5 depend on the nature of the polymer. For the chitosan·(VCl3y precursors sub-10 nm nanocrystals are formed. The calcination process, involved in the preparation method, produces V2O5 with photoluminescence in the visible light region, suggesting the possible application in oxygen sensing devices.

  10. Crystal structure and electronic properties of the new compound U{sub 3}Fe{sub 4}Ge{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Berthebaud, D. [Sciences Chimiques de Rennes, Equipe Chimie du Solide et Matériaux, Université de Rennes 1 UMR CNRS 6226, 263 Avenue de Général Leclerc, 35042 Rennes (France); Tougait, O., E-mail: tougait@univ-rennes1.fr [Sciences Chimiques de Rennes, Equipe Chimie du Solide et Matériaux, Université de Rennes 1 UMR CNRS 6226, 263 Avenue de Général Leclerc, 35042 Rennes (France); Potel, M. [Sciences Chimiques de Rennes, Equipe Chimie du Solide et Matériaux, Université de Rennes 1 UMR CNRS 6226, 263 Avenue de Général Leclerc, 35042 Rennes (France); Lopes, E.B.; Waerenborgh, J.C.; Gonçalves, A.P. [IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Estrada Nacional 10, 2686-953 Sacavém (Portugal); Noël, H. [Sciences Chimiques de Rennes, Equipe Chimie du Solide et Matériaux, Université de Rennes 1 UMR CNRS 6226, 263 Avenue de Général Leclerc, 35042 Rennes (France)

    2013-03-25

    Graphical abstract: The electronic properties of the new compound U{sub 3}Fe{sub 4}Ge{sub 4} suggest a change of behaviour of the 5f electrons from a localized-like character at high temperature to a fairly delocalized behaviour at low temperature. Highlights: ► Novel uranium intermetallic compound. ► Ferromagnetic ordering at low temperature. ► Itinerant system at low temperature. ► Strong hybridization between the U 5f and Fe 3d electrons. -- Abstract: The new ternary compound U{sub 3}Fe{sub 4}Ge{sub 4} was prepared by melting the pure metals in the stoichiometric ratio. An ingot of large scale domain was obtained by decreasing the temperature from the liquid state down to 1000 °C over 4 h. Single crystal X-ray diffraction revealed that U{sub 3}Fe{sub 4}Ge{sub 4} crystallizes with the Gd{sub 3}Cu{sub 4}Ge{sub 4}-type of structure, in the orthorhombic space group Immm (no. 71), Z = 2, with unit-cell parameters at room temperature of, a = 4.090(1) Å, b = 6.639(1) Å and c = 13.702(1) Å. The crystal structure is characterized by two U, one Fe and two Ge independent crystallographic positions and can be described as resulting from the condensation by face-sharing and edge-sharing of U(1)Ge6 octahedrons, U(2)Ge6 trigonal prisms and Fe(1)Ge4 tetrahedrons. The electronic properties of this new compound were investigated by means of electrical resistivity, thermopower, ac and dc magnetic susceptibility and {sup 57}Fe Mossbauer spectroscopy. U{sub 3}Fe{sub 4}Ge{sub 4} undergoes a ferromagnetic transition below T{sub C} = 17(1) K. The low temperature (4 K) {sup 57}Fe Mossbauer spectra can be well fitted using a model with Fe atoms in a paramagnetic state, suggesting that the magnetic ordering originates from the U sublattice alone.

  11. Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

    Directory of Open Access Journals (Sweden)

    Kai-Yu Peng

    2014-01-01

    Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

  12. Crystallization of rare earth germanates in the K2O-Ln2O3-GeO2-H2O at 280 deg C

    International Nuclear Information System (INIS)

    Panasenko, E.B.; Begunova, R.G.; Sklokina, N.F.

    1980-01-01

    Crystallization of rare earth germanates in potassium hydroxide solutions is studied at 280 deg C. Stability limits for different crystalline phases are established. Diorthogermanates Ln 2 O 3 x2GeO 3 (three structural modifications) are formed with all lanthanides except lanthanum. Germanates-apatites 7Ln 2 O 3 x9GeO 2 are characteristic for ''large'' lanthanides La-Nd. Alkali germanate of the composition 0.5 K 2 OxLn 2 O 3 xGeO 2 xnH 2 O is realized with the elements of the end of rare earth series, i.e., Tm-Lu. Some properties of the germanates synthesized are considered [ru

  13. From metastable to stable modifications-in situ Laue diffraction investigation of diffusion processes during the phase transitions of (GeTe)(n)Sb2Te3 (6 < n < 15) crystals.

    OpenAIRE

    Schneider, Matthias N.; Biquard, Xavier; Stiewe, Christian; Schröder, Thorsten; Urban, Philipp; Oeckler, Oliver

    2012-01-01

    Temperature dependent phase transitions of compounds (GeTe)(n)Sb₂Te₃ (n = 6, 12, 15) have been investigated by in situ microfocus Laue diffraction. Diffusion processes involving cation defect ordering at similar to 300 degrees C lead to different nanostructures which are correlated to changes of the thermoelectric characteristics.

  14. Influence of Proton and Salt Concentration on the Chromonic Liquid Crystal Phase Diagram of Disodium Cromoglycate Solutions: Prospects and Limitations of a Host for DNA Nanostructures.

    Science.gov (United States)

    Zhang, Bingru; Kitzerow, Heinz-S

    2016-03-31

    Lyotropic chromonic liquid crystals have recently been suggested for use as a self-organized host for dispersing and aligning self-organized DNA origami nanostructures. However, an appropriate pH value and a suitable cation concentration are necessary to stabilize such nanostructures and to avoid unfolding of the DNA. The present study shows that the nematic and columnar liquid crystal phases appearing in aqueous solutions of disodium cromoglycate are robust against the replacement of deionized water by a neutral or alkaline buffer solution. However, disodium cromoglycate precipitates when an acidic buffer is used or when the concentration of magnesium cations exceeds a critical concentration of about 0.6-0.7 mmol/L.

  15. Parasitic Extraction of 900-GeV/c Protons from the Tevatron using a Bent Silicon Crystal and Measurement of the $b \\bar{b}$ Production Cross-Section at $\\sqrt{s}$ = 38.8-GeV

    Energy Technology Data Exchange (ETDEWEB)

    Ramachandran, Sathyadev [UCLA

    1997-01-01

    This dissertation discusses results from an experiment demonstrating the feasibility of a novel extraction scheme using channeling in a bent crystal at future high-energy colliders for doing heavy flavor physics in a fixed target environment concurrently with collider experiments. In the second half of this dissertation we present the results from a measurement of the inclusive cross-section for $b\\bar{b}$ production at the center-of-mass energy of 38.8 GeV using the semileptonic decays of the beauty mesons.

  16. Parasitic extraction of 900-GeV/c protons from the Tevatron using a bent silicon crystal and measurement of the $b \\bar{b}$ production cross-section at $\\sqrt{s}$ = 38.8-GeV

    Energy Technology Data Exchange (ETDEWEB)

    Ramachandran, Sathyadev [Univ. of California, Los Angeles, CA (United States)

    1997-01-01

    This dissertation discusses results from an experiment demonstrating the feasibility of a novel extraction scheme using channeling in a bent crystal at future high-energy colliders for doing heavy avor physics in a xed target environment concurrently with collider experiments. In the second half of this dissertation we present the results from a measurement of the inclusive cross-section for b$\\bar{b}$ production at the center-of-mass energy of 38.8 GeV using the semileptonic decays of the beauty mesons.

  17. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  18. Radiation stability of protein crystals grown by nanostructured templates: synchrotron microfocus analysis

    International Nuclear Information System (INIS)

    Pechkova, Eugenia; Tropiano, Giuseppe; Riekel, Christian; Nicolini, Claudio

    2004-01-01

    X-ray radiation damage of lysozyme single crystals by an intense monochromatic beam from a focussed third-generation synchrotron radiation source has been studied. The preliminary results show a significantly higher resistance to synchrotron radiation of lysozyme microcrystals produced by means of nanotechnology-based template with respect to those prepared by classical methodology. The implications of this finding for protein crystallography are discussed

  19. Quantum chemistry of solids. LCAO treatment of crystals and nanostructures. 2. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Evarestov, Robert A. [St. Petersburg State Univ. (Russian Federation). Chemistry Dept.

    2012-07-01

    This book delivers a comprehensive account of the main features and possibilities of LCAO methods for the first principles calculations of electronic structure of periodic systems. The first part describes the basic theory underlying the LCAO methods applied to periodic systems and the use of Hartree-Fock (HF), Density Function theory (DFT) and hybrid Hamiltonians. The translation and site symmetry consideration is included to establish connection between k-space solid -state physics and real-space quantum chemistry. The inclusion of electron correlation effects for periodic systems is considered on the basis of localized crystalline orbitals. The possibilities of LCAO methods for chemical bonding analysis in periodic systems are discussed. The second part deals with the applications of LCAO methods for calculations of bulk crystal properties, including magnetic ordering and crystal structure optimization. In the second edition two new chapters are added in the application part II of the book. Chapter 12 deals with the recent LCAO calculations and illustrates the efficiency of the scalar-relativistic LCAO method for solids, containing heavy atoms. Chapter 13 deals with the symmetry properties and the recent applications of LCAO method to inorganic nanotubes. New material is added to chapter 9 devoted to LCAO calculations of perfect-crystal properties. The possibilities of LCAO method for calculation of the high-frequency dielectric constants of crystals and the description of phase transitions in solids are discussed. The efficiency of LCAO method in the quantum-mechanics-molecular dynamics approach to the interpretation of x-ray absorption and EXAFS spectra is illustrated. A new section is devoted to recent LCAO calculations of electronic, vibrational and magnetic properties of tungstates MeWO4 (Me: Fe,Co,Ni,Cu,Zn,Cd).

  20. Synthesis of single crystal manganese oxide octahedral molecular sieve (OMS) nanostructures with tunable tunnels and shapes.

    Science.gov (United States)

    Li, Wei-Na; Yuan, Jikang; Gomez-Mower, Sinue; Sithambaram, Shantakumar; Suib, Steven L

    2006-02-23

    A new and facile route is reported to manipulate the self-assembly synthesis of hierarchically ordered Rb-OMS-2 and pyrolusite with an interesting flowerlike morphology by a direct and mild reaction between rubidium chromateand manganese sulfate without any organic templates. The crystal forms, morphologies, and tunnel sizes of the obtained OMS materials can be controlled. A mechanism for the growth of manganese dioxides with flowerlike architectures was proposed. The obtained products exhibit potential for use in catalysis and other applications.

  1. Development of a Quartz Crystal Microbalance Sensor Modified by Nano-Structured Polyaniline for Detecting the Plasticizer in Gaseous State

    Directory of Open Access Journals (Sweden)

    Hui XU

    2014-01-01

    Full Text Available A quartz crystal microbalance (QCM modified by a film of nano-structured polyaniline (nano-PANI is developed as a gas sensor for detecting the presence of the plasticizer, such as dibutyl phthalate (DBP in the ambient. Nano-PANI is prepared using a non-template method and the films are deposited using physical coating method. Scanning electron microscopy is used to characterize the nano-PANI film. The sensor response towards DBP is tested in a sealed gas chamber. The QCM resonant frequency shift is measured due to the absorption of DBP with different concentration ranging from 0.04 to 1.2 ppm. The experiment results show that the variation of the frequency is a linear function of DBP concentration and the sensitivity up to 54 Hz/ppm could be achieved by using the researched nano-PANI on QCM. To investigate the selectivity, the potential interfering analytes such as acetone, ethanol, acetaldehyde and formaldehyde are tested. And the mechanism hypothesis of the nano-PANI sensitive to the plasticizer is analyzed.

  2. Mechanism of Nanostructure Formation on a Surface of CdZnTe Crystal by Laser Irradiation

    OpenAIRE

    Medvids, A; Mičko, A

    2009-01-01

    Since crystalline Cd1-xZnxTe is widely used in radiation techniques to produce X-ray, gamma-ray, and other hard radiation detectors, present work is a further study of processes, occurring near the surface of Cd1-xZnxTe under laser radiation. Surface morphology and optical property change of Cd0.9Zn0.1Te crystal near-surface layer after irradiation with laser, aimed to create graded band-gap, was investigated. As a radiation source Nd:YAG laser working in Q-modulation mode with parameters...

  3. Hydrothermal synthesis of nanostructured SnO particles through crystal growth in the presence of gelatin

    Science.gov (United States)

    Uchiyama, Hiroaki; Nakanishi, Shunsuke; Kozuka, Hiromitsu

    2014-09-01

    Crystalline SnO particles were obtained from Sn6O4(OH)4 by the hydrothermal treatment in aqueous solutions containing gelatin at 150 °C for 24 h, where the morphologies of the SnO products changed from blocks to layered disks, stacked plates and unshaped aggregates with increasing amount of gelatin in the solutions. Such morphological changes of SnO particles were thought to be attributed to the suppression of the growth of SnO crystals by the adsorbed gelatin.

  4. The evolution of the crystal-field states upon increasing hybridization in Ce(Cu sub 1 sub - sub x Ni sub x) sub 2 Ge sub 2

    CERN Document Server

    Krimmel, A; Severing, A

    1997-01-01

    Inelastic neutron scattering (INS) experiments have been performed on polycrystalline Ce(Cu sub 1 sub - sub x Ni sub x) sub 2 Ge sub 2 for the concentrations x=0.1, 0.28, 0.5, 0.65 to study the effect of the increasing hybridization between the f electrons and the band states on the crystal-field (CF) states. For both x=0.1 and x=0.28, CF level schemes very similar to that of pure CeCu sub 2 Ge sub 2 have been found. In contrast, no well defined CF excitations could be detected for x=0.5 and x=0.65. The absence of properly developed CF states in high-T* Kondo and/or valence fluctuation compounds is a well known fact. Remarkably, in Ce(Cu sub 1 sub - sub x Ni sub x) sub 2 Ge sub 2 for x=0.5 and x=0.65, the Kondo temperatures as determined by quasielastic neutron scattering are at least one order of magnitude below the typical CF splitting energies observed for x=0.1 and x=0.28. The evolution of the CF splitting in Ce(Cu sub 1 sub - sub x Ni sub x) sub 2 Ge sub 2 and its distinctive behaviour is discussed in co...

  5. Direct observation of a non-isothermal crystallization process in precursor Li10GeP2S12 glass electrolyte

    Science.gov (United States)

    Tsukasaki, Hirofumi; Mori, Shigeo; Shiotani, Shinya; Yamamura, Hideyuki; Iba, Hideki

    2017-11-01

    Crystallization of a precursor Li10GeP2S12 (LGPS) glass electrolyte by heat treatment significantly improves its ionic conductivity. The LGPS crystalline phase obtained by heat treatment above 450 °C shows an ionic conductivity on the order of 10-2 S/cm. To clarify the correlation between the crystallization behavior of precursor LGPS glasses and ionic conductivity, we developed an observation technique to visualize precipitated nanocrystallites and a new method to evaluate the crystallization degree via transmission electron microscopy (TEM). In-situ TEM observation revealed that LGPS nanocrystallites precipitated above 450 °C and their size remained fundamentally intact during heating. That is, the crystallization behavior could be characterized by only the formation of LGPS nanocrystallites in an amorphous matrix. In addition, the crystallization degree was quantitatively evaluated from electron diffraction patterns. The crystallization degree remarkably increased at around 450 °C and reached more than 60% above 450 °C. Based on these results, a high ionic conductivity of approximately 1.0 × 10-2 S/cm was confirmed to be directly associated with the appearance of the LGPS crystalline phase.

  6. Detergent-Mediated Formation of β-Hematin: Heme Crystallization Promoted by Detergents Implicates Nanostructure Formation for Use as a Biological Mimic

    Science.gov (United States)

    2016-01-01

    Hemozoin is a unique biomineral that results from the sequestration of toxic free heme liberated as a consequence of hemoglobin degradation in the malaria parasite. Synthetic neutral lipid droplets (SNLDs) and phospholipids were previously shown to support the rapid formation of β-hematin, abiological hemozoin, under physiologically relevant pH and temperature, though the mechanism by which heme crystallization occurs remains unclear. Detergents are particularly interesting as a template because they are amphiphilic molecules that spontaneously organize into nanostructures and have been previously shown to mediate β-hematin formation. Here, 11 detergents were investigated to elucidate the physicochemical properties that best recapitulate crystal formation in the parasite. A strong correlation between the detergent’s molecular structure and the corresponding kinetics of β-hematin formation was observed, where higher molecular weight polar chains promoted faster reactions. The larger hydrophilic chains correlated to the detergent’s ability to rapidly sequester heme into the lipophilic core, allowing for crystal nucleation to occur. The data presented here suggest that detergent nanostructures promote β-hematin formation in a similar manner to SNLDs and phospholipids. Through understanding mediator properties that promote optimal crystal formation, we are able to establish an in vitro assay to probe this drug target pathway. PMID:27175104

  7. Thioaluminogermanate M(AlS2)(GeS2)4 (M = Na, Ag, Cu): Synthesis, Crystal Structures, Characterization, Ion-Exchange and Solid-State 27Al and 23Na NMR Spectroscopy

    KAUST Repository

    Alahmary, Fatimah S.

    2018-03-14

    The new thioaluminogermanate Na(AlS2)(GeS2)4 (1) was successfully synthesized by a direct combination reaction. The compound crystallizes in the monoclinic space group P21/n (no. 14) with unit cell parameters a = 6.803(3) Å, b = 38.207(2) Å, c = 6.947(4) Å, and β = 119.17(3)°. The crystal structure is composed of a [(AlS2)(GeS2)4]− 3D polyanionic network, in which Al and Ge atoms share the atomic positions and Na cations occupy the channels and voids formed by the connection of (Ge/Al)S4 tetrahedra. The title compound shows a cation-exchange property with monovalent Ag+ and Cu+ ions at room temperature in solvent media, resulting in the formation of the isostructural compounds Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3), respectively. The ion-exchange products Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3) show higher air stability and narrower bandgap energies compared to those of the parent compound Na(AlS2)(GeS2)4 (1).

  8. PDFfit2 and PDFgui: computer programs for studying nanostructure in crystals

    International Nuclear Information System (INIS)

    Farrow, C L; Juhas, P; Liu, J W; Bryndin, D; Bozin, E S; Bloch, J; Proffen, Th; Billinge, S J L

    2007-01-01

    PDFfit2 is a program as well as a library for real-space refinement of crystal structures. It is capable of fitting a theoretical three-dimensional (3D) structure to atomic pair distribution function data and is ideal for nanoscale investigations. The fit system accounts for lattice constants, atomic positions and anisotropic atomic displacement parameters, correlated atomic motion, and experimental factors that may affect the data. The atomic positions and thermal coefficients can be constrained to follow the symmetry requirements of an arbitrary space group. The PDFfit2 engine is written in C++ and is accessible via Python, allowing it to inter-operate with other Python programs. PDFgui is a graphical interface built on the PDFfit2 engine. PDFgui organizes fits and simplifies many data analysis tasks, such as configuring and plotting multiple fits. PDFfit2 and PDFgui are freely available via the Internet

  9. Experimental and theoretical study of directional effects on radiation and pair creation in crystal at energies near 100 GeV

    International Nuclear Information System (INIS)

    Belkacem, A.

    1986-07-01

    We investigated the electron-positron pair production from incident photons on a thin crystal. When the photon energy is higher than about 30 GeV, the pair production rate from a photon beam aligned along a crystal direction is higher than the rate measured with an amorphous target (Bethe-Heitler value). In contrast with what was observed for a random orientation (or with an amorphous target) the pair production rate increases sharply with the photon energy. We also investigated the radiation emitted by high energy electrons and positrons (70-200 GeV) along a crystal direction. The intensity of the radiation was found to be extremely high. The increase of the intensity of these two electromagnetic processes (radiation and pair creation) was still observed for incident angles much larger than the channeling critical angle. Thus, a theory based on the channeling phenomenon is not able to explain such observations. In order to understand these new phenomena we developed a new theoretical approach based on the electromagnetic interaction in strong fields. The predictions of this theory on the pair production are in very good agreement with the measurements. The calculations of the radiation are in quantitative agreement with measurements for incident angles larger than the channeling critical angle. This agreement is only qualitative for incident angles smaller than the critical angle [fr

  10. Design and characterization of one-dimensional photonic crystals based on ZnS/Ge for infrared-visible compatible stealth applications

    Science.gov (United States)

    Qi, Dong; Wang, Xian; Cheng, Yongzhi; Gong, Rongzhou; Li, Bowen

    2016-12-01

    One-dimensional photonic crystals (1DPCs) based on ZnS/Ge for compatible stealth of infrared and visible were firstly proposed theoretically and investigated experimentally. Owing to the equal inclination interference, the designed 1DPCs structure can be fabricated with a certain color corresponding to the different responded wavelength. In addition, the average emissivity of the proposed structure can reach as low as 0.054 at infrared atmosphere window of 3-5 μm. The as-prepared structure indicates that it is feasible for 1DPC to achieve infrared-visible compatible stealth.

  11. Carbon fiber structure for B.G.O. crystals of an electromagnetic calorimeter for energies around and above 2 GeV

    International Nuclear Information System (INIS)

    Anamateros, E.; Germenia, C.; Napoleone, T.

    1991-01-01

    This document describes a project to construct with composite material an Electromagnetic Calorimeter for a large, solid angle crystal ball for energies around and above 2 GeV, with thin walls (0.36 mm) and a complex figure like a 'Rugby Ball'. The contract was between the National Institute of Nuclear Physics (INFN) of Frascati, Genova, Catania, and Roma, and ITALCOMPOSITI - a joint venture between Agusta Group (50%) and ENI (50%) to research, produce and market advanced prepreg materials and composite structural components for aerospace, defense, energy, and transport applications. The contract concerns the design and the realization of the structure, which consists of 24 baskets containing 480 crystals of B.G.O. weighing about 4 Kg, each with full alveolus, including electronic systems

  12. A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal

    Energy Technology Data Exchange (ETDEWEB)

    Wistisen, T. N. [Aarhus Univ. (Denmark); Uggerhoj, U. I. [Aarhus Univ. (Denmark); Wienands, U. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Markiewicz, T. W. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Noble, R. J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Benson, B. L. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Smith, T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Bagli, E. [Univ. of Ferrara (Italy); Bandiera, L. [Univ. of Ferrara (Italy); Germogli, G. [Univ. of Ferrara (Italy); Guidi, V. [Univ. of Ferrara (Italy); Mazzolari, A. [Univ. of Ferrara (Italy); Holtzapple, R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States); Tucker, S. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2015-12-03

    We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

  13. Crystal and magnetic structure of Eu4Ga8Ge16

    DEFF Research Database (Denmark)

    Christensen, M.; Bryan, J.D.; Birkedal, H.

    2003-01-01

    The antiferromagnetic ordering and crystal structure of the clathrate compound Eu4Ga8Ge16 was investigated using multitemperature neutron and synchrotron x-ray powder diffraction. High-resolution low-Q neutron data were measured at long wavelength (lambda=4.2 Angstrom) between 1.5 and 15 K...... for an accurate description of the magnetic structure, whereas high-Q diffraction patterns were collected using neutrons of wavelength 1.9 Angstrom at the same temperatures to determine the nuclear structure precisely. The structure orders antiferromagnetically at about 8 K with ferromagnetic chains parallel...... dependence of the crystal structure was investigated from 11 K to room temperature using synchrotron x-ray powder diffraction. Analysis of the atomic displacement parameters with Einstein and Debye models gives Theta(E)=82(3) K for the guest atom and Theta(D)=266(4) K for the framework atoms. Based on Theta...

  14. Deflection of 400  GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron

    CERN Document Server

    Scandale, Walter; Della Mea, Gianantonio; De Salvador, Davide; Milan, Riccardo; Vomiero, Alberto; Baricordi, Stefano; Dalpiaz, Pietro; Fiorini, Massimiliano; Guidi, Vincenzo; Martinelli, Giuliano; Mazzolari, Andrea; Milan, Emiliano; Ambrosi, Giovanni; Azzarello, Philipp; Battiston, Roberto; Bertucci, Bruna; Burger, William J; Ionica, Maria; Zuccon, Paolo; Cavoto, Gianluca; Santacesaria, Roberta; Valente, Paolo; Vallazza, Erik; Afonin, Alexander G; Baranov, Vladimir T; Chesnokov, Yury A; Kotov, Vladilen I; Maisheev, Vladimir A; Yazynin, Igor A; Afanasiev, Sergey V; Kovalenko, Alexander D; Taratin, Alexander M; Denisov, Alexander S; Gavrikov, Yury A; Ivanov,Yuri M; Ivochkin, Vladimir G; Kosyanenko, Sergey V; Petrunin, Anatoli A; Skorobogatov, Vyacheslav V; Suvorov, Vsevolod M; Bolognini, Davide; Foggetta, Luca; Hasan, Said; Prest, Michela

    2008-01-01

    This paper presents a detailed study of the deflection phenomena of a 400  GeV/c proton beam impinging on a new generation of bent silicon crystals; the tests have been performed at the CERN Super Proton Synchrotron H8 beam line. Channeling and volume reflection angles are measured with an extremely precise goniometer and with high resolution silicon microstrip detectors. Volume reflection has been observed and measured for the first time at this energy, with a single-pass efficiency as large as 98%, in good agreement with the simulation results. This efficiency makes volume reflection a possible candidate for collimation with bent crystals at the CERN Large Hadron Collider.

  15. Ultra-low infrared emissivity at the wavelength of 3-5 μm from Ge/ZnS one-dimensional photonic crystal

    Science.gov (United States)

    Zhang, Weigang; Xu, Guoyue; Shi, Xiao; Ma, Hui; Li, Lei

    2015-04-01

    Ge/ZnS one-dimensional photonic crystal (1DPC) was successfully prepared by alternating thin films of Ge and ZnS on the quartz substrate by using the optical coating technology. The microstructure and spectral emissivity of as-prepared 1DPC were characterized by using scanning electron microscopy (SEM) and Fourier transform infrared spectrometer (FTIR), respectively. The test result of spectral emissivity shows that the as-prepared 1DPC has ultra-low infrared emissivity at the wavelength of 3-5 μm, the average emissivity can be as low as 0.052, fully reached the level of high conductive precious metal films. The results indicate that not only the high conductive precious metal films have ultra-low infrared emissivity, the semiconductor materials such as Ge and ZnS through rational design of 1DPC can also get ultra-low infrared emissivity. The as-prepared 1DPC with ultra-low infrared emissivity is promising for use as materials for efficient solar thermal collectors and infrared stealth.

  16. Crystallization and amorphization studies of a Ge 2 Sb 2.3 Te 5 thin-film sample under pulsed laser irradiation

    Science.gov (United States)

    Khulbe, Pramod K.; Xun, Xiaodong; Mansuripur, M.

    2000-05-01

    We present the results of crystallization and amorphization studies on a thin-film sample of Ge 2 Sb 2.3 Te 5 , encapsulated in a quadrilayer stack as in the media of phase-change optical disk data storage. The study was conducted on a two-laser static tester in which one laser, operating in pulsed mode, writes either amorphous marks on a crystalline film or crystalline marks on an amorphous film. The second laser, operating at low power in the cw mode, simultaneously monitors the progress of mark formation in terms of the variations of reflectivity both during the write pulse and in the subsequent cooling period. In addition to investigating some of the expected features associated with crystallization and amorphization, we noted certain curious phenomena during the mark-formation process. For example, at low-power pulsed illumination, which is insufficient to trigger the phase transition, there is a slight change in the reflectivity of the sample. This is believed to be caused by a reversible change in the complex refractive index of the Ge 2 Sb 2.3 Te 5 film in the course of heating above the ambient temperature. We also observed that the mark-formation process may continue for as long as 1 s beyond the end of the write laser pulse. This effect is especially pronounced during amorphous mark formation under high-power, long-pulse illumination.

  17. Gold-decorated highly ordered self-organized grating-like nanostructures on Ge surface: Kelvin probe force microscopy and conductive atomic force microscopy studies.

    Science.gov (United States)

    Mollick, Safiul Alam; Kumar, Mohit; Singh, Ranveer; Satpati, Biswarup; Ghose, Debabrata; Som, Tapobrata

    2016-10-28

    Nanoarchitecture by atomic manipulation is considered to be one of the emerging trends in advanced functional materials. It has a gamut of applications to offer in nanoelectronics, chemical sensing, and nanobiological science. In particular, highly ordered one-dimensional semiconductor nanostructures fabricated by self-organization methods are in high demand for their high aspect ratios and large number of applications. An efficient way of fabricating semiconductor nanostructures is by molecular beam epitaxy, where atoms are added to a crystalline surface at an elevated temperature during growth, yielding the desired structures in a self-assembled manner. In this article, we offer a room temperature process, in which atoms are sputtered away by ion impacts. Using gold ion implantation, the present study reports on the formation of highly ordered self-organized long grating-like nanostructures, with grooves between them, on a germanium surface. The ridges of the patterns are shown to have flower-like protruding nanostructures, which are mostly decorated by gold atoms. By employing local probe microscopic techniques like Kelvin probe force microscopy and conductive atomic force microscopy, we observe a spatial variation in the work function and different nanoscale electrical conductivity on the ridges of the patterns and the grooves between them, which can be attributed to gold atom decorated ridges. Thus, the architecture  presented offers the advantage of using the patterned germanium substrates as periodic arrays of conducting ridges and poorly conducting grooves between them.

  18. Synthesis and thermoelectric properties of Re3As6.6In0.4 with Ir3Ge7 crystal structure

    Science.gov (United States)

    Verchenko, Valeriy Y; Vasiliev, Anton S; Tsirlin, Alexander A; Kulbachinskii, Vladimir A; Kytin, Vladimir G

    2013-01-01

    Summary The Re3As7− xInx solid solution was prepared for x ≤ 0.5 by heating the elements in stoichiometric ratios in evacuated silica tubes at 1073 K. It crystallizes with the Ir3Ge7 crystal structure, space group Im−3m, with a unit-cell parameter a ranging from 8.716 to 8.747 Å. The crystal structure and properties were investigated for a composition with x = 0.4. It is shown that indium substitutes arsenic exclusively at one crystallographic site, such that the As–As dumbbells with d As–As = 2.54 Å remain intact. Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit. PMID:23946913

  19. Synthesis and thermoelectric properties of Re3As6.6In0.4 with Ir3Ge7 crystal structure

    Directory of Open Access Journals (Sweden)

    Valeriy Y. Verchenko

    2013-07-01

    Full Text Available The Re3As7−xInx solid solution was prepared for x ≤ 0.5 by heating the elements in stoichiometric ratios in evacuated silica tubes at 1073 K. It crystallizes with the Ir3Ge7 crystal structure, space group Im−3m, with a unit-cell parameter a ranging from 8.716 to 8.747 Å. The crystal structure and properties were investigated for a composition with x = 0.4. It is shown that indium substitutes arsenic exclusively at one crystallographic site, such that the As–As dumbbells with dAs–As = 2.54 Å remain intact. Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit.

  20. Procedure for growing Bi4Ge3O12 bismuth germanate single crystals with suppressed growth defects

    International Nuclear Information System (INIS)

    Zikmund, J.; Blazek, K.; Jarolimek, O.; Horak, J.

    1991-01-01

    The method developed allows high-quality scintillator material to be grown reproducibly by the Czochralski method. The crystals attain diameters up to 80 mm and lengths up to 200 mm. The growth is performed on instruments equipped with devices for continuous measurement of weight increments of the growing crystals with a precision better than 10 mg. The growth parameters are controlled with a computer and based on actual data. The crystals are grown using an axial temperature gradient within the range of 25 to 35 degC/cm and a constant drawing rate within the range of 0.5 to 1.2 mm/h. An interface shape suitable for the suppression of defect development is achieved through a combination of the weight increment and rotation of the crystal. (M.D.)

  1. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  2. R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-12-15

    The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800

  3. Physical Approaches to Designing a Two-Cascade Terahertz Laser Generating Difference-Frequency Radiation in a Nonlinear Optical ZnGeP2 Crystal

    Science.gov (United States)

    Gribenyukov, A. I.; Dyomin, V. V.; Polovtsev, I. G.; Yudin, N. N.

    2018-03-01

    An optical layout of a two-cascade frequency converter of the mid-IR laser radiation into the terahertz (THz) radiation is proposed. In the first stage it is assumed to convert the Tm:YLF-laser frequency in a Cr+2:ZnSe polycrystal into the radiation with the wavelength 2-3 μm. The second cascade can be presented as a parametric conversion of the frequencies of two laser sources operating in the 2-3 μm range into the THz radiation via the difference-frequency mixing in a nonlinear optical ZnGeP2 crystal. The estimates of the terahertz output signal are reported.

  4. Crystal growth of YFe{sub 2}Ge{sub 2} and the dependence of its superconducting properties on sample preparation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiasheng; Semeniuk, Konstantin; Reiss, Pascal; Brown, Philip; Grosche, Malte [Cavendish Lab., Cambridge (United Kingdom); Feng, Zhuo [London Centre of Nanotechnology, UCL, London (United Kingdom); Lampronti, Giulio [Cambridge Univ., Dept. of Earth Sciences, Cambridge (United Kingdom)

    2016-07-01

    The d-electron system YFe{sub 2}Ge{sub 2} exhibits an unusually high Sommerfeld ratio of specific heat capacity of C/T ∝ 100 mJ/(molK{sup 2}), signaling strong electronic correlations. Evidence of superconductivity has been reported in polycrystals and in flux-grown single crystals with residual resistance ratios (RRR) of the order of 50, but these samples show no thermodynamic signatures of a bulk superconducting transition. We find that by combining (i) a prereaction of YFe{sub 2}, (ii) careful control of nominal composition, and (iii) subsequent annealing procedures, the polycrystalline YFe{sub 2}Ge{sub 2} samples grown using a radio-frequency (RF) induction furnace can reach RRR values ∝ 200 with resistive superconducting transitions temperatures of around 1.85 K. This new generation of sample displays clear heat capacity anomalies as well as nearly 100% diamagnetic screening, confirming the bulk nature of its superconductivity. We present details of the sample preparation and characterization and discuss the correlation between nominal composition and superconductivity.

  5. The crystal electric field effect on 4f-hole and magnetic phase diagram in heavy-fermion compound YbPtGe determined from ultrasonic measurements

    International Nuclear Information System (INIS)

    Xi, Xiaojuan; Ishii, Isao; Noguchi, Yoshihito; Goto, Hiroki; Kamikawa, Shuhei; Suzuki, Takashi; Araki, Koji; Katoh, Kenichi

    2015-01-01

    YbPtGe with the orthorhombic ε-TiNiSi-type structure is reported as a heavy-fermion ferromagnet with the magnetic transition temperature T C = 5.4 K. Recent research suggested that its magnetic anisotropy can be ascribed to the crystal electric field (CEF) effect. In order to clarify the CEF effect and to investigate the magnetic phase transition in this compound, ultrasonic measurements of YbPtGe and related theoretical calculation have been performed. The transverse elastic moduli C 44 , C 55 , and C 66 exhibit a softening characteristic with a peak around 150 K while the longitudinal moduli C 11 , C 22 , and C 33 show a continuous hardening in the temperature (T) range above T C . Theoretical strain-susceptibility fitting indicates that the softening results from a quadrupole interaction between the ground and excited Kramers doublets of CEF. For the elastic moduli below T C , abrupt elastic hardening is observed in C 22 , C 33 , and C 55 while C 11 , C 44 , and C 66 exhibit a step-like softening. The difference between the softening and hardening of elastic moduli below T C may be due to the magnetostriction or a different dominant coupling between a strain and an order parameter. Phase diagram with a magnetic field (H) parallel to the a-axis is obtained by the measurements of the T and H dependences of the elastic modulus C 11 . (author)

  6. Coherent Bremsstrahlung, Coherent Pair Production, Birefringence and Polarimetry in the 20-170 GeV energy range using aligned crystals

    CERN Document Server

    Apyan, A; Badelek, B; Ballestrero, S; Biino, C; Birol, I; Cenci, P; Connell, S H; Eichblatt, S; Fonseca, T; Freund, A; Gorini, B; Groess, R; Ispirian, K; Ketel, T; Kononets, Y V; López, A; Mangiarotti, A; Sellschop, J P Friedel; Shieh, M; Sona, P; Strakhovenko, V M; Uggerhøj, U; Uggerhøj, Erik; Van Rens, B; Velasco, M; Vilakazi, Z Z; Wessely, O; Ünel, G; Kononets, Yu V

    2008-01-01

    The processes of coherent bremsstrahlung (CB) and coherent pair production (CPP) based on aligned crystal targets have been studied in the energy range 20-170 GeV. The experimental arrangement allowed these phenomena as well as their polarization dependence to be evaluated under conditions where single-photon cross-sections could be measured. This proved very important as the theoretical description of CB and CPP is an area of active theoretical debate and development. The theoretical approach used in this paper predicts both the cross sections and polarization observables very well for the experimental conditions investigated, indicating that the understanding of CB and CPP is reliable up to energies of 170 GeV. A birefringence effect in CPP was studied and it was demonstrated this enabled new technologies for high energy photon beam optics, such as polarimeters (for both linear and circular polarization) and phase plates. We also present new results regarding the features of coherent high energy photon emis...

  7. Characterisation of a natural quartz crystal as a reference material for microanalytical determination of Ti, Al, Li, Fe, Mn, Ga and Ge

    Science.gov (United States)

    Audetat, Andreas; Garbe-Schonberg, Dieter; Kronz, Andreas; Pettke, Thomas; Rusk, Brian G.; Donovan, John J.; Lowers, Heather

    2015-01-01

    A natural smoky quartz crystal from Shandong province, China, was characterised by laser ablation ICP-MS, electron probe microanalysis (EPMA) and solution ICP-MS to determine the concentration of twenty-four trace and ultra trace elements. Our main focus was on Ti quantification because of the increased use of this element for titanium-in-quartz (TitaniQ) thermobarometry. Pieces of a uniform growth zone of 9 mm thickness within the quartz crystal were analysed in four different LA-ICP-MS laboratories, three EPMA laboratories and one solution-ICP-MS laboratory. The results reveal reproducible concentrations of Ti (57 ± 4 μg g-1), Al (154 ± 15 μg g-1), Li (30 ± 2 μg g-1), Fe (2.2 ± 0.3 μg g-1), Mn (0.34 ± 0.04 μg g-1), Ge (1.7 ± 0.2 μg g-1) and Ga (0.020 ± 0.002 μg g-1) and detectable, but less reproducible, concentrations of Be, B, Na, Cu, Zr, Sn and Pb. Concentrations of K, Ca, Sr, Mo, Ag, Sb, Ba and Au were below the limits of detection of all three techniques. The uncertainties on the average concentration determinations by multiple techniques and laboratories for Ti, Al, Li, Fe, Mn, Ga and Ge are low; hence, this quartz can serve as a reference material or a secondary reference material for microanalytical applications involving the quantification of trace elements in quartz.

  8. FTIR Spectroscopic Study of Mn(II) Oxidizing Pseudomonas putida GB1 Biofilms on ZnSe, Ge, and CdTe Crystal Surfaces

    Science.gov (United States)

    Parikh, S. J.; Gilbert, H. L.; Conklin, M. H.; Chorover, J.

    2003-12-01

    Pseudomonas putida strain GB1 is an aerobic, gram-negative bacterium capable of gaining energy from the biological oxidation of Mn(II). The increased kinetics of Mn(II) oxidation resulting from this microbial catalysis is known to contribute to the formation of Mn(IV) oxides in natural waters. Environmental conditions, including aqueous and surface chemistry, greatly affect the macromolecular composition and surface adhesion behavior of bacteria. For example, the chemistry of GB1 biofilms forming on crystal surfaces is expected to vary with Mn(II) concentration in solution. We used Fourier transform infrared (FTIR) spectroscopy to probe the formation of GB1 biofilms on the surfaces of negatively-charged IR transparent ZnSe, Ge, and CdTe crystal windows. Bacterial adhesion experiments were carried out both in the presence and absence of Mn(II)(aq) with FTIR windows suspended in a bioreactor comprising GB1 cells in a mineral growth medium at pH 7.6 and 30° C. After 85 h, windows were removed from the reactor and IR spectra were collected. Oxidation of Mn(II) was confirmed via leucoberbelin blue (LBB) indicator and the appearance of Mn-O stretches in biofilm IR spectra. Transmission FTIR spectra do not reveal detectable effects of crystal type on biofilm composition, but do indicate changes in chemistry resulting from introduction of Mn(II). In the presence of Mn(II), spectra of biofilms show higher relative intensity in the carbohydrate region (specifically 1160, 1052 cm-1). A down frequency shift in the P=O absorbance was also observed (1240 to 1222 cm-1). These results indicate a modification of bacterial cell/biofilm composition resulting during biological oxidation of Mn(II). The CdTe transmission window permits measurements to low wavenumbers (treatment. Transmission electron microscopy (TEM) of the bioreactor suspension revealed needle-like clusters of Mn oxide crystals in association with GB1 biomass and extracellular materials.

  9. Nanostructured rocksalt-type solid solution series (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1): Thermal behavior and thermoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Rosenthal, Tobias; Neudert, Lukas; Ganter, Pirmin [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Boor, Johannes de; Stiewe, Christian [German Aerospace Center, Linder Höhe, 51147 Cologne (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany)

    2014-07-01

    Solid solutions (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} (n=4, 7, 12; 0≤x≤1) represent stable high-temperature phases and can be obtained as metastable compounds by quenching. High-resolution transmission electron microscopy reveals that the quenched (pseudo-)cubic materials exhibit parquet-like nanostructures comparable to, but especially for n=4 more pronounced than in (GeTe){sub n}Sb{sub 2}Te{sub 3} (GST materials). The temperature-dependent phase transitions are comparable; however, substitution with Sn significantly lowers the transition temperatures between cubic high-temperature phase and the long range ordered layered phases that are stable at ambient conditions. In addition, the metrics of the quenched Sn-containing materials remains closer to cubic, especially for samples with n=7 or 12. For samples with high defect concentrations (n=4, 7), Sn-substituted samples exhibit electrical conductivities up to 3 times higher than those of corresponding GST materials. Since the difference in thermal conductivity is much less pronounced, this results in a doubling of the thermoelectric figure of merit (ZT) at high temperatures for (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} as compared to (GeTe){sub 4}Sb{sub 2}Te{sub 3}. Sn doping in (GeTe){sub 7}Sb{sub 2}Te{sub 3} increases the ZT value by a factor of up to 4 which is also due to an increased Seebeck coefficient. - Graphical abstract: High-resolution transmission electron micrographs of (GeTe){sub 4}Sb{sub 2}Te{sub 3} (top) and (Ge{sub 0.5}Sn{sub 0.5}Te){sub 4}Sb{sub 2}Te{sub 3} (bottom) with different nanostructures and thermoelectric figures of merit (ZT) of these samples. - Highlights: • Representative samples of solid solutions of (Ge{sub 1−x}Sn{sub x}Te){sub n}Sb{sub 2}Te{sub 3} were synthesized. • Sn substitution leads to more pronounced nanostructures in defect-rich compounds. • Phase transitions are comparable to (GeTe){sub n}Sb{sub 2}Te{sub 3} but occur at lower temperatures

  10. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  11. Flux Crystal Growth of the RE2Ru3Ge5 (RE = La, Ce, Nd, Gd, Tb) Series and Their Magnetic and Metamagnetic Transitions

    Energy Technology Data Exchange (ETDEWEB)

    Bugaris, Daniel E. [Materials Science; Malliakas, Christos D. [Materials Science; Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States; Bud’ko, Sergey L. [Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States; Division of Materials Science & amp, Engineering, Ames Laboratory, Ames, Iowa 50011, United States; Calta, Nicholas P. [Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States; Chung, Duck Young [Materials Science; Kanatzidis, Mercouri G. [Materials Science; Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

    2017-11-16

    Previously synthesized only as powders, single crystals of the RE2Ru3Ge5 (RE = La, Ce, Nd, Gd, Tb) series of compounds have been now been obtained from molten In. These materials crystallize with the U2Co3Si5-type structure in orthorhombic space group Ibam with lattice parameters a ~ 10.00-9.77 Å (La-Tb), b ~ 12.51-12.35 Å, and c ~ 5.92-5.72 Å. The structure is a three-dimensional framework consisting of RuGe5 and RuGe6 units, as well as Ge-Ge zigzag chains. This structure type, along with the other five (Sc2Fe3Si5, Lu2Co3Si5, Y2Rh3Sn5, Yb2Ir3Ge5, and Yb2Pt3Sn5) to compose the RE2T3X5 phase space, are discussed in depth. For the three compounds with RE = Nd, Gd, and Tb, multiple magnetic transitions and metamagnetic behavior are observed. Electronic band structure calculations performed on La2Ru3Ge5 indicate that these materials have a negative band gap and are semimetallic in nature.

  12. Application of electrochemically deposited nanostructured ZnO layers on quartz crystal microbalance for NO2 detection

    International Nuclear Information System (INIS)

    St. Kliment Ohridski N° 8, Sofia 1756 (Bulgaria))" data-affiliation=" (UCTM bul. St. Kliment Ohridski N° 8, Sofia 1756 (Bulgaria))" >Georgieva, B; Petrov, M; Lovchinov, K; Ganchev, M; Dimova-Malinovska, D; Georgieva, V

    2014-01-01

    The research was fixed on sensing behavior of ZnO nanostructured (NS) films to NO 2 concentrations in the environment. The ZnO NS layers are deposited by electrochemical method on quartz resonators with Au electrodes. The sorption properties of ZnO layers were defined by measuring the resonant frequency shift (Δf) of the QCM-ZnO structure for different NO 2 concentrations. The measurements were based on the correlation between the frequency shift of the QCM and additional mass loading (Δm) on the resonator calculated using Sauerbrey equation for the AT-cut quartz plate. Frequency – Time Characteristics (FTCs) of the samples were measured as a function of different NO 2 concentrations in order to define the sorption abilities of ZnO layers. The experiments were carried out on a special set up in a dynamical regime. From FTCs the response and the recovery times of the QCM-ZnO structure were measured with varying NO 2 . Frequency shift changed from 23 Hz to 58Hz when NO 2 was varied in the range of 250ppm – 5000ppm. The process of sorption was estimated as reversible and the sorption as physical. The obtained results demonstrated that QCM covered with the electrochemically deposited nanostructured ZnO films can be used as application in NO 2 sensors

  13. Electronic structure of antiferromagnetic UN and UPtGe single crystals from optical and magneto-optical spectroscopy; Elektronische Struktur von antiferromagnetischen UN- und UPtGe-Einkristallen aus optischer und magnetooptischer Spektroskopie

    Energy Technology Data Exchange (ETDEWEB)

    Marutzky, M.

    2006-10-12

    In this thesis the study of the magneto-optical Kerr effect and the determination of the optical constants by means of ellipsometry and Fourier-transformation infrared spectroscopy of UN and UPtGe is described. In UPtGe an optical anisotropy was detected over a spectral range from 6 meV to 32 eV. (HSI)

  14. Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity.

    Science.gov (United States)

    Nakamura, Yoshiaki

    2018-01-01

    The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.

  15. High efficient photocatalytic activity from nanostructuralized photonic crystal-like p-n coaxial hetero-junction film photocatalyst of Cu3SnS4/TiO2 nanotube arrays

    Science.gov (United States)

    Li, Yan; Liu, Fang-Ting; Chang, Yin; Wang, Jian; Wang, Cheng-Wei

    2017-12-01

    Structuring the materials in the form of photonic crystals is a new strategy for photocatalytic applications. Herein, a new concept of photonic crystal-induced p-n coaxial heterojunction film photocatalyst of Cu3SnS4/TiO2 (CTS/PhC-TNAs) was well-designed and successfully fabricated by combining periodic pulse anodic oxidation and in-situ self-assembling methods Such nanostructured CTS/PhC-TNAs exhibited significantly improved photocatalytic degradation activity under simulated sunlight irradiation with methyl orange (MO) as the target pollutants. Within 120 min, 82% of the MO (10 mg/L) was photodegraded and its kinetic constant per specific surface area reached 0.05332 μmol/m2h, which is 1.6 and 12.8 times more quickly than that of PhC-TNAs and CTS, respectively. Its significantly enhanced photocatalytic activity could be mainly attributed to a joint effect of the unique photonic crystal property of PhC-TNAs and the nanostructured hollow p-n coaxial hetero-junction, which result in an increased efficiency of charge separation and transfer and also an improved spectral response capability. This photonic crystal film photocatalyst has the potential for enhancing the photocatalytic activity via further optimizing the photonic stop band of PhC-TNAs. The study presents a new means to design the kind of photonic crystal structural-induced novel photocatalysts with high photocatalytic activities in pollution treatment.

  16. Mapping the nanostructures in human adult and baby tooth enamel

    International Nuclear Information System (INIS)

    Low, I.M.; Mahmood, U.; Duraman, N.

    2005-01-01

    This paper investigates and compares the variations in crystal structure, composition, and nanostructures within the human adult and deciduous teeth. The similarities and differences in the nanostructure of both types of teeth are highlighted and discussed. (author)

  17. Hierarchical Thin Film Architectures for Enhanced Sensor Performance: Liquid Crystal-Mediated Electrochemical Synthesis of Nanostructured Imprinted Polymer Films for the Selective Recognition of Bupivacaine

    Directory of Open Access Journals (Sweden)

    Subramanian Suriyanarayanan

    2014-04-01

    Full Text Available Nanostructured bupivacaine-selective molecularly imprinted 3-aminophenylboronic acid-p-phenylenediamine co-polymer (MIP films have been prepared on gold-coated quartz (Au/quartz resonators by electrochemical synthesis under cyclic voltammetric conditions in a liquid crystalline (LC medium (triton X-100/water. Films prepared in water and in the absence of template were used for control studies. Infrared spectroscopic studies demonstrated comparable chemical compositions for LC and control polymer films. SEM studies revealed that the topologies of the molecularly imprinted polymer films prepared in the LC medium (LC-MIP exhibit discernible 40 nm thick nano-fiber structures, quite unlike the polymers prepared in the absence of the LC-phase. The sensitivity of the LC-MIP in a quartz crystal microbalance (QCM sensor platform was 67.6 ± 4.9 Hz/mM under flow injection analysis (FIA conditions, which was ≈250% higher than for the sensor prepared using the aqueous medium. Detection was possible at 100 nM (30 ng/mL, and discrimination of bupivacaine from closely related structural analogs was readily achieved as reflected in the corresponding stability constants of the MIP-analyte complexes. The facile fabrication and significant enhancement in sensor sensitivity together highlight the potential of this LC-based imprinting strategy for fabrication of polymeric materials with hierarchical architectures, in particular for use in surface-dependent application areas, e.g., biomaterials or sensing.

  18. Mapping the 3D distribution of CdSe nanocrystals in highly oriented and nanostructured hybrid P3HT-CdSe films grown by directional epitaxial crystallization.

    Science.gov (United States)

    Roiban, L; Hartmann, L; Fiore, A; Djurado, D; Chandezon, F; Reiss, P; Legrand, J-F; Doyle, S; Brinkmann, M; Ersen, O

    2012-11-21

    Highly oriented and nanostructured hybrid thin films made of regioregular poly(3-hexylthiophene) and colloidal CdSe nanocrystals are prepared by a zone melting method using epitaxial growth on 1,3,5-trichlorobenzene oriented crystals. The structure of the films has been analyzed by X-ray diffraction using synchrotron radiation, electron diffraction and 3D electron tomography to afford a multi-scale structural and morphological description of the highly structured hybrid films. A quantitative analysis of the reconstructed volumes based on electron tomography is used to establish a 3D map of the distribution of the CdSe nanocrystals in the bulk of the films. In particular, the influence of the P3HT-CdSe ratio on the 3D structure of the hybrid layers has been analyzed. In all cases, a bi-layer structure was observed. It is made of a first layer of pure oriented semi-crystalline P3HT grown epitaxially on the TCB substrate and a second P3HT layer containing CdSe nanocrystals uniformly distributed in the amorphous interlamellar zones of the polymer. The thickness of the P3HT layer containing CdSe nanoparticles increases gradually with increasing content of NCs in the films. A growth model is proposed to explain this original transversal organization of CdSe NCs in the oriented matrix of P3HT.

  19. Optical Properties of Nanostructure Formed on a Surface of CdZnTe Crystal by Laser Radiation

    OpenAIRE

    Medvids, A; Mičko, A; Litovchenko, N; Strilchuk, O; Onufrijevs, P; Plūdons, A

    2008-01-01

    Self-organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser radiation (LR) at intensities within 4 - 12 MW/cm2. The effect of exciton quantum confinement manifested by a shift to higher energies of the A0,X exciton band of the photoluminescent spectrum is present in structures of 10 – 15 nm in diameter at the top of nano-hills. A graded band gap structure with optical window is formed at the top of nano-hills.

  20. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    Energy Technology Data Exchange (ETDEWEB)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  1. crystal

    Science.gov (United States)

    Yu, Yi; Huang, Yisheng; Zhang, Lizhen; Lin, Zhoubin; Sun, Shijia; Wang, Guofu

    2014-07-01

    A Nd3+:Na2La4(WO4)7 crystal with dimensions of ϕ 17 × 30 mm3 was grown by the Czochralski method. The thermal expansion coefficients of Nd3+:Na2La4(WO4)7 crystal are 1.32 × 10-5 K-1 along c-axis and 1.23 × 10-5 K-1 along a-axis, respectively. The spectroscopic characteristics of Nd3+:Na2La4(WO4)7 crystal were investigated. The Judd-Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10-20 cm2 with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10-20 cm2 with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10-20 cm2 for σ-polarization and 2.67 × 10-20 cm2 for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd3+:Na2La4(WO4)7 crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd3+:Na2La4(WO4)7 crystal as a promising laser crystal fit for laser diode pumping.

  2. Crystal Structure, Chemical Bonding and Magnetism Studies for Three Quinary Polar Intermetallic Compounds in the (Eu1−xCax9In8(Ge1−ySny8 (x = 0.66, y = 0.03 and the (Eu1−xCax3In(Ge3−ySn1+y (x = 0.66, 0.68; y = 0.13, 0.27 Phases

    Directory of Open Access Journals (Sweden)

    Hyein Woo

    2015-04-01

    Full Text Available Three quinary polar intermetallic compounds in the (Eu1−xCax9In8(Ge1−ySny8 (x = 0.66, y = 0.03 and the (Eu1−xCax3In(Ge3-ySn1+y (x = 0.66, 0.68; y = 0.13, 0.27 phases have been synthesized using the molten In-metal flux method, and the crystal structures are characterized by powder and single-crystal X-ray diffractions. Two orthorhombic structural types can be viewed as an assembly of polyanionic frameworks consisting of the In(Ge/Sn4 tetrahedral chains, the bridging Ge2 dimers, either the annulene-like “12-membered rings” for the (Eu1−xCax9In8(Ge1−ySny8 series or the cis-trans Ge/Sn-chains for the (Eu1−xCax3In(Ge3−ySn1+y series, and several Eu/Ca-mixed cations. The most noticeable difference between two structural types is the amount and the location of the Sn-substitution for Ge: only a partial substitution (11% occurs at the In(Ge/Sn4 tetrahedron in the (Eu1−xCax9In8(Ge1−ySny8 series, whereas both a complete and a partial substitution (up to 27% are observed, respectively, at the cis-trans Ge/Sn-chain and at the In(Ge/Sn4 tetrahedron in the (Eu1−xCax3In(Ge3−ySn1+y series. A series of tight-binding linear muffin-tin orbital calculations is conducted to understand overall electronic structures and chemical bonding among components. Magnetic susceptibility measurement indicates a ferromagnetic ordering of Eu atoms below 5 K for Eu1.02(1Ca1.98InGe2.87(1Sn1.13.

  3. Crystal structure, chemical bonding and magnetism studies for three quinary polar intermetallic compounds in the (Eu(1-x)Ca(x))9In8(Ge(1-y)Sn(y))8 (x = 0.66, y = 0.03) and the (Eu(1-x)Ca(x))3In(Ge(3-y)Sn(1+y)) (x = 0.66, 0.68; y = 0.13, 0.27) phases.

    Science.gov (United States)

    Woo, Hyein; Jang, Eunyoung; Kim, Jin; Lee, Yunho; Kim, Jongsik; You, Tae-Soo

    2015-04-22

    Three quinary polar intermetallic compounds in the (Eu(1-x)Ca(x))9In8(Ge(1-y)Sn(y))8 (x = 0.66, y = 0.03) and the (Eu(1-x)Ca(x))3In(Ge(3-y)Sn(1+y)) (x = 0.66, 0.68; y = 0.13, 0.27) phases have been synthesized using the molten In-metal flux method, and the crystal structures are characterized by powder and single-crystal X-ray diffractions. Two orthorhombic structural types can be viewed as an assembly of polyanionic frameworks consisting of the In(Ge/Sn)4 tetrahedral chains, the bridging Ge2 dimers, either the annulene-like "12-membered rings" for the (Eu(1-x)Ca(x))9In8(Ge(1-y)Sn(y))8 series or the cis-trans Ge/Sn-chains for the (Eu(1-x)Ca(x))3In(Ge(3-y)Sn(1+y)) series, and several Eu/Ca-mixed cations. The most noticeable difference between two structural types is the amount and the location of the Sn-substitution for Ge: only a partial substitution (11%) occurs at the In(Ge/Sn)4 tetrahedron in the (Eu(1-x)Ca(x))9In8(Ge(1-y)Sn(y))8 series, whereas both a complete and a partial substitution (up to 27%) are observed, respectively, at the cis-trans Ge/Sn-chain and at the In(Ge/Sn)4 tetrahedron in the (Eu(1-x)Ca(x))3In(Ge(3-y)Sn(1+y)) series. A series of tight-binding linear muffin-tin orbital calculations is conducted to understand overall electronic structures and chemical bonding among components. Magnetic susceptibility measurement indicates a ferromagnetic ordering of Eu atoms below 5 K for Eu1.02(1)Ca1.98InGe2.87(1)Sn1.13.

  4. Hydrothermal crystallization in the KOH-TiO2-GeO2-H2O system at 500 deg C and 0.1 GPa

    International Nuclear Information System (INIS)

    Ilyushin, G.D.

    2003-01-01

    The identification of structural phases and crystallochemical analysis of phases in a KOH-TiO 2 -GeO 2 -H 2 O system under conditions of high temperatures and pressures are performed. A comparison is made with earlier obtained results for a system of KOH-GeO 2 (quartz-like structure)-H 2 O. It is established that K 2 Ti 6 O 13 skeleton potassium titanate is a basic phase in the system of KOH-TiO 2 -GeO 2 -H 2 O at 500 deg C and 0.1 GPa within a wide range of varying TiO 2 :GeO 2 and KOH concentrations [ru

  5. Preparation of ZnGeP2 for Nonlinear Optical Applications: Melt and Homoepitaxial Vapor Growth, Properties of the Grown Crystals

    National Research Council Canada - National Science Library

    Gribenyukov, Alexander

    2004-01-01

    ... (transparency and damage threshold) determines the use of the material in nonlinear optics. It is known that for ZnGeP2 structural perfection is mainly determined by defects formed due to deviations from stoichiometry during synthesis and growth...

  6. Superhydrophilic nanostructure

    Science.gov (United States)

    Mao, Samuel S; Zormpa, Vasileia; Chen, Xiaobo

    2015-05-12

    An embodiment of a superhydrophilic nanostructure includes nanoparticles. The nanoparticles are formed into porous clusters. The porous clusters are formed into aggregate clusters. An embodiment of an article of manufacture includes the superhydrophilic nanostructure on a substrate. An embodiment of a method of fabricating a superhydrophilic nanostructure includes applying a solution that includes nanoparticles to a substrate. The substrate is heated to form aggregate clusters of porous clusters of the nanoparticles.

  7. Manganese Nanostructures and Magnetism

    Science.gov (United States)

    Simov, Kirie Rangelov

    The primary goal of this study is to incorporate adatoms with large magnetic moment, such as Mn, into two technologically significant group IV semiconductor (SC) matrices, e.g. Si and Ge. For the first time in the world, we experimentally demonstrate Mn doping by embedding nanostructured thin layers, i.e. delta-doping. The growth is observed by in-situ scanning tunneling microscopy (STM), which combines topographic and electronic information in a single image. We investigate the initial stages of Mn monolayer growth on a Si(100)(2x1) surface reconstruction, develop methods for classification of nanostructure types for a range of surface defect concentrations (1.0 to 18.2%), and subsequently encapsulate the thin Mn layer in a SC matrix. These experiments are instrumental in generating a surface processing diagram for self-assembly of monoatomic Mn-wires. The role of surface vacancies has also been studied by kinetic Monte Carlo modeling and the experimental observations are compared with the simulation results, leading to the conclusion that Si(100)(2x1) vacancies serve as nucleation centers in the Mn-Si system. Oxide formation, which happens readily in air, is detrimental to ferromagnetism and lessens the magnetic properties of the nanostructures. Therefore, the protective SC cap, composed of either Si or Ge, serves a dual purpose: it is both the embedding matrix for the Mn nanostructured thin film and a protective agent for oxidation. STM observations of partially deposited caps ensure that the nanostructures remain intact during growth. Lastly, the relationship between magnetism and nanostructure types is established by an in-depth study using x-ray magnetic circular dichroism (XMCD). This sensitive method detects signals even at coverages less than one atomic layer of Mn. XMCD is capable of discerning which chemical compounds contribute to the magnetic moment of the system, and provides a ratio between the orbital and spin contributions. Depending on the amount

  8. Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

    KAUST Repository

    Wei, Kaya

    2014-11-01

    We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.

  9. Geometry and electronic structure of an impurity-trapped exciton in the Cs2GeF6 crystal doped with U4+. The 5f17s1 manifold

    International Nuclear Information System (INIS)

    Ordejon, B.; Seijo, L.; Barandiaran, Z.

    2007-01-01

    Complete text of publication follows: Excitons trapped at impurity centres in highly ionic crystals were first described by McClure and Pedrini [Phys. Rev. B 32, 8465 (1985)] as excited states consisting of a bound electron-hole pair with the hole localized on the impurity and the electron on nearby lattice sites, and a very short impurity-ligand bond length. In this work we present a detailed microscopic characterization of an impurity - trapped exciton in Cs 2 GeF 6 doped with U 4+ . Its electronic structure has been studied by means of CASSCF/CASPT2/SOCI relativistic ab initio model potential (AIMP) embedded-cluster calculations on (UF 6 ) 2- and (UF 6 Cs 8 ) 6+ clusters embedded in Cs 2 GeF 6 . The local geometry of the impurity-trapped exciton, the potential energy curves, and the multi electronic wavefunctions, have been obtained as direct, non-empirical results of the methods. The calculated excited states appear to be significantly delocalized outside the UF 6 volume and their U-F bond length turns out to be very short, closer to that of a pentavalent uranium defect than to that of a tetravalent uranium defect. The wavefunctions of these excited states show a dominant U 5f 1 7s 1 configuration character. This result has never been anticipated by simpler models and reveals the unprecedented ability of diffuse orbitals of f-element impurities to act as electron traps in ionic crystals

  10. Thermally-induced crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass as probed by combined X-ray diffraction and PAL spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Scientific Research Company “Carat”, 202, Stryjska str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa 42201 (Poland); Calvez, L.; Petracovschi, E. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institute des Sciences chimiques de Rennes, Université de Rennes 1, 35042 Rennes Cedex (France); Klym, H. [Lviv polytechnic National University, 12 Bandera str., Lviv 79013 (Ukraine); Ingram, A. [Physics Faculty of Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland); Demchenko, P. [Ivan Franko National University of Lviv, 6, Kyryla and Mefodiya Str., Lviv 79005 (Ukraine)

    2014-01-05

    Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section.

  11. Nanostructured superconductors

    National Research Council Canada - National Science Library

    Moshchalkov, V. V; Fritzsche, Joachim

    2011-01-01

    ... through nanostructuring and for developing a variety of novel fluxonics devices based on vortex manipulation. Nanostructuring can, in fact, create such conditions for the flux pinning by arrays of nanofabricated antidots or magnetic dots, which could maximize the second important superconducting critical parameter (critical current) up to its theoretical limit ...

  12. Intrinsic light yield and light loss coefficient of Bi.sub.4./sub.Ge.sub.3./sub.O.sub.12./sub. single crystals

    Czech Academy of Sciences Publication Activity Database

    Yawai, N.; Chewpraditkul, W.; Wanarak, C.; Nikl, Martin; Ratanatongchai, W.

    2014-01-01

    Roč. 36, č. 12 (2014), s. 2030-2033 ISSN 0925- 3467 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Bi 4 Ge 3 O 12 * energy resolution * light yield * photofraction * mass attenuation coefficient Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.981, year: 2014

  13. Phase transitions in Ge-Sb phase change materials

    International Nuclear Information System (INIS)

    Raoux, Simone; Virwani, Kumar; Cabral, Cyril Jr.; Krusin-Elbaum, Lia; Jordan-Sweet, Jean L.; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-01-01

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T x ) also show an increase with Ge concentration closely tracking the measured values of T x . For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity

  14. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  15. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  16. DFT study and crystal structure analysis of a new nano-structure five coordinated Hg(II) complex involving C-H⋯O, N⋯O and π⋯π interactions in a supra-molecular structure.

    Science.gov (United States)

    Montazerozohori, M; Musavi, S A; Masoudiasl, A; Hojjati, A; Assoud, A

    2015-08-05

    In this research, template synthesis and crystal structure of a new HgLI₂ complex are presented (L=N(1)-(4-nitrobenzylidene)-N(2)-(2-((E)-(4-nitrobenzylidene)amino)ethyl)ethane-1,2-diamine). The mercury complex crystallizes in the triclinic system with space group of P1¯. The crystal structure of the complex shows a distorted trigonal bipyramidal geometry around the mercury(II) center; including two I and an N atoms of Schiff base ligand in equatorial plane and two iminic N atoms in axial positions. Two five membered mercury containing rings [Hg(-N-C-C-N-)] are found in the structure. Some C-H⋯O, N⋯O and π⋯π intermolecular interactions causes a supra-molecular network in the solid-state. In addition to crystal structure analysis, density functional theory (DFT) study at the B3LYP/LanL2DZ level of theory has been also performed on the structure. Thereafter some theoretical structural and spectral data were compared with experimental results. Furthermore, total energy levels of HOMO and LUMO orbitals, molecular electrostatic potential, Mullikan atomic charges, thermodynamic and polarizability properties of the complex were calculated. Finally the mercury complex was prepared in nano-structure size confirmed by SEM and XRD analyses. The particles size of the titled complex was evaluated under 40 nm based on Sherrer's formula. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Crystal structure of the compounds formed in the systems of Sm-(Pd, Pt)-(Si, Ge) at 20 at.%Sm and 870K

    International Nuclear Information System (INIS)

    Barakatova, Zh.M.; Seropegin, Yu.D.; Bodak, O.I.; Belan, B.D.

    1995-01-01

    Formation of two new compounds at component interaction in Sm(Pd-Pt) -(Si, Ge) ternary structures is determined under 20at.%Sm and 870 K and their crystalline structure is studied. Formation of three new intermetallic compounds is determined and occurrence of SmPd 2 Si compound is proved within Sm-Pd-Si system. Formation of five compounds is determined within Sm-Pt-Si system; periods of crystalline lattice and structure type are determined for Sm 2 Pt 3 Si 5 , S, PtSi 3 structure. Minimal amount of compounds was detected in Sm-Pd-Ge system. Periods of crystalline structure and structure type are determined for two compounds formed in the studied isoconcentrate. 4 refs.; 2 figs

  18. Nanostructured electronic and magnetic materials

    Indian Academy of Sciences (India)

    R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

    Nanostructured systems are useful in tailoring the magnetic, optical and electronic properties of materials. It is obvious that .... A hysteresis effect is produced and forms a hysteresis loop, this loop is a key tool in the quantitative analysis of ..... below the secondary crystallization temperature, in controlled time. Doing so yields ...

  19. BaGe(5): a new type of intermetallic clathrate.

    Science.gov (United States)

    Aydemir, Umut; Akselrud, Lev; Carrillo-Cabrera, Wilder; Candolfi, Christophe; Oeschler, Niels; Baitinger, Michael; Steglich, Frank; Grin, Yuri

    2010-08-18

    BaGe(5) constitutes a new type of intermetallic clathrate obtained by decomposition of clathrate-I Ba(8)Ge(43)(3) at low temperatures. The crystal structure consists of characteristic layers interconnected by covalent bonds. BaGe(5) is a semiconducting Zintl phase.

  20. Surface nanostructuring of LiNbO3 by high-density electronic excitations

    International Nuclear Information System (INIS)

    El-Said, A.S.; Wilhelm, R.A.; Facsko, S.; Trautmann, C.

    2013-01-01

    Lithium niobate (LiNbO 3 ) single crystals were irradiated with high energy gold ions (0.5–2.2 GeV) at the UNILAC (GSI) and with 150-keV highly charged xenon ions from an EBIT (Electron Beam Ion Trap, HZDR). The surfaces of the irradiated crystals were analyzed by scanning force microscopy showing very similar topographic changes. Swift heavy ions and slow highly charged ions produce hillock-like nanostructures on the surface. In both cases, the energy deposition of the ions is characterized by dense localized electronic excitations and efficient transfer to the lattice. Furthermore, the irradiation results in a shift in the band gap energy as evidenced by UV–Vis absorption spectroscopy. Specific modifications (e.g. hillock size, energy loss threshold) induced by slow highly charged ions are discussed in comparison with effects due to the electronic energy loss by swift heavy ions

  1. Surface nanostructuring of LiNbO{sub 3} by high-density electronic excitations

    Energy Technology Data Exchange (ETDEWEB)

    El-Said, A.S., E-mail: elsaid@kfupm.edu.sa [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden (Germany); Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Nuclear and Radiation Physics Lab, Physics Department, Faculty of Science, Mansoura University, 35516 Mansoura (Egypt); Wilhelm, R.A. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Facsko, S. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden (Germany); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

    2013-11-15

    Lithium niobate (LiNbO{sub 3}) single crystals were irradiated with high energy gold ions (0.5–2.2 GeV) at the UNILAC (GSI) and with 150-keV highly charged xenon ions from an EBIT (Electron Beam Ion Trap, HZDR). The surfaces of the irradiated crystals were analyzed by scanning force microscopy showing very similar topographic changes. Swift heavy ions and slow highly charged ions produce hillock-like nanostructures on the surface. In both cases, the energy deposition of the ions is characterized by dense localized electronic excitations and efficient transfer to the lattice. Furthermore, the irradiation results in a shift in the band gap energy as evidenced by UV–Vis absorption spectroscopy. Specific modifications (e.g. hillock size, energy loss threshold) induced by slow highly charged ions are discussed in comparison with effects due to the electronic energy loss by swift heavy ions.

  2. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  3. Relaxation in magnetic nanostructures

    International Nuclear Information System (INIS)

    Novak, M.A.; Folly, W.S.D.; Sinnecker, J.P.; Soriano, S.

    2005-01-01

    Nanostructured magnetic materials present a wide range of magnetic relaxation phenomena. One problem in studying nanomagnetic granular materials is the strong dependence of the relaxation with the anisotropy barrier which, even for systems with narrow size distributions, brings difficulties in the analysis of the experimental data. Molecular magnetism, with the chemists' bottom-up approach to build molecular nanostructures, provides this field with some beautiful model systems, well ordered crystals of single molecule magnets, single molecule chains, molecular magnetic multilayers and others novelties to appear. Most of these systems present slow relaxation and the study of these well-characterized nanomaterials may elucidate many features that are difficult to grasp in the non molecular materials

  4. Optical absorption, piezoelectric effect and second harmonic generation studies of single crystal AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid solution

    Energy Technology Data Exchange (ETDEWEB)

    Myronchuk, G.L.; Krymus, A.S.; Piasecki, M. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Lakshminarayana, G. [Universiti Putra Malaysia, Wireless and Photonic Networks Research Centre, Faculty of Engineering, Serdang, Selangor (Malaysia); Kityk, I.V. [Czestochowa University of Technology, Faculty of Electrical Engineering, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Parasyuk, O.V. [Eastern European National University, Department of Chemistry, Lutsk (Ukraine); Rudysh, M.Ya.; Shchepanskyi, P.A. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Ivan Franko National University of Lviv, Physics Department, Lviv (Ukraine)

    2017-03-15

    Spectral features of absorption were studied for novel AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid-state alloys at different temperatures. The synthesized crystals structure parameters are obtained by the X-ray Rietveld refinement method. During increasing temperature from 100 up to 300 K, the energy gap of AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} decreases linearly from 2.05 up to 1.94 eV at a rate 5.7 x 10{sup -4} eV/K. The magnitudes of piezoelectric coefficients are significantly changed and demonstrate substantial anisotropy. At room temperature, these values are equal to 5.2 pm/V (d{sub 11}), 31.5 pm/V (d{sub 22}) and 35.5 pm/V (d{sub 33}). It is crucial that with an increasing temperature the piezoelectric efficiencies are increased. We have explored temperature and laser-induced changes of piezoelectric coefficients. (orig.)

  5. In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy

    International Nuclear Information System (INIS)

    Nikolova, Liliya; MacLeod, Jennifer M.; Ibrahim, Heide; Stern, Mark J.; Siwick, Bradley J.; Reed, Bryan W.; Campbell, Geoffrey H.; LaGrange, Thomas; Rosei, Federico

    2014-01-01

    The crystallization of amorphous semiconductors is a strongly exothermic process. Once initiated the release of latent heat can be sufficient to drive a self-sustaining crystallization front through the material in a manner that has been described as explosive. Here, we perform a quantitative in situ study of explosive crystallization in amorphous germanium using dynamic transmission electron microscopy. Direct observations of the speed of the explosive crystallization front as it evolves along a laser-imprinted temperature gradient are used to experimentally determine the complete interface response function (i.e., the temperature-dependent front propagation speed) for this process, which reaches a peak of 16 m/s. Fitting to the Frenkel-Wilson kinetic law demonstrates that the diffusivity of the material locally/immediately in advance of the explosive crystallization front is inconsistent with those of a liquid phase. This result suggests a modification to the liquid-mediated mechanism commonly used to describe this process that replaces the phase change at the leading amorphous-liquid interface with a change in bonding character (from covalent to metallic) occurring in the hot amorphous material

  6. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  7. Synthesis, crystal structure, near-IR photoelectric response of two 1-D selenides: [Cu2MSe5]·[Mn(H+-en)2(en)] (M=Ge, Sn)

    Science.gov (United States)

    Zhang, Yingying; Hu, Dandan; Yang, Huajun; Lin, Jian; Wu, Tao

    2017-07-01

    Reported here are two solvothermally synthesized metal selenides, namely [Cu2MSe5][Mn(H+-en)2(en)] (M = Ge (1) and Sn (2), and en=ethanediamine). The two isostructural compounds feature a 1-D anionic chain of [Cu2MSe5]4- with the existence of strong Cu•••Cu interaction. The estimated optical band gap was determined to be 1.69 eV for 1 and 1.49 eV for 2, indicating their semiconducting nature. Interestingly, 2 exhibits NIR-triggered photoelectric response, which make it potential semiconductor sensor used in photoelectric devices.

  8. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  9. Structural phase transitions in Bi[sub 2]V[sub 1[minus]x]Ge[sub x]O[sub 5. 5[minus]x/2] (x = 0. 2, 0. 4, and 0. 6) single crystals: X-ray crystallographic study

    Energy Technology Data Exchange (ETDEWEB)

    Sooryanarayana, K.; Guru Row, T.N.; Varma, K.B.R. (Indian Inst. of Science, Bangalore (India))

    1999-02-01

    Single crystals of Bi[sub 2]V[sub 1[minus]x]Ge[sub x]O[sub 5.5[minus]x/2] (x = 0.2, 0.4, and 0.6) were grown by slow cooling of melts. Bismuth vanadate transforms from an orthorhombic to a tetragonal structure and subsequently to an orthorhombic system when the Ge[sup 4+] concentration was varied from x = 0.2 to x = 0.6. All of these compositions crystallized in polar space groups (Aba2, F4mm, and Fmm2 for x = 0.2, 0.4, and 0.6, respectively). The structures were fully determined by single crystal X-ray diffraction studies.

  10. Unusual 5f magnetism in the U.sub.2./sub.Fe.sub.3./sub.Ge ternary Laves phase: a single crystal study

    Czech Academy of Sciences Publication Activity Database

    Henriques, M.S.; Gorbunov, Denis; Waerenborgh, J.C.; Havela, L.; Shick, Alexander; Diviš, M.; Andreev, Alexander V.; Gonçalves, A.P.

    2013-01-01

    Roč. 25, č. 6 (2013), s. 1-9 ISSN 0953-8984 R&D Projects: GA ČR GAP204/12/0150; GA AV ČR IAA100100912; GA ČR(CZ) GAP204/10/0330 Institutional support: RVO:68378271 Keywords : actinide alloys * uranium intermetallics * single crystal * magnetization * high magnetic fields Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.223, year: 2013

  11. Irradiation-Induced Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Birtcher, R.C.; Ewing, R.C.; Matzke, Hj.; Meldrum, A.; Newcomer, P.P.; Wang, L.M.; Wang, S.X.; Weber, W.J.

    1999-08-09

    This paper summarizes the results of the studies of the irradiation-induced formation of nanostructures, where the injected interstitials from the source of irradiation are not major components of the nanophase. This phenomena has been observed by in situ transmission electron microscopy (TEM) in a number of intermetallic compounds and ceramics during high-energy electron or ion irradiations when the ions completely penetrate through the specimen. Beginning with single crystals, electron or ion irradiation in a certain temperature range may result in nanostructures composed of amorphous domains and nanocrystals with either the original composition and crystal structure or new nanophases formed by decomposition of the target material. The phenomenon has also been observed in natural materials which have suffered irradiation from the decay of constituent radioactive elements and in nuclear reactor fuels which have been irradiated by fission neutrons and other fission products. The mechanisms involved in the process of this nanophase formation are discussed in terms of the evolution of displacement cascades, radiation-induced defect accumulation, radiation-induced segregation and phase decomposition, as well as the competition between irradiation-induced amorphization and recrystallization.

  12. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  13. Photonic effects in natural nanostructures

    Science.gov (United States)

    Rey GonzáLez, Rafael Ramón; Barrera Patiã+/-O, Claudia Patricia

    Nature exhibits a great variety of structures and nanostructures. In particular the interaction light-matter has a strong dependence with the shape of the nanostructures. In some cases, in the so called structural color, ordered arrays of nanostructures play a very critical role. One of the most interesting color effects is the iridescence, the angular dependence of the observed color in some species of butterflies, insects, plants, beetles, fishes, birds and even in minerals. In the last years, iridescence has been related with photonic properties. In the present work, we present a theoretical study of the photonic properties for different patterns that exist in natural nanostructures present in wings of butterflies that exhibit iridescence. The nanostructures observed in these cases present spatial variations of the dielectric constant that are possible to model them as 1D and 2D photonic crystal. Partial photonic gaps are found as function of lattice constant, dielectric contrast and geometrical configuration. Also, disordered effects are considered. Authors would like to thank the División de Investigación Sede Bogotá for their financial support at Universidad Nacional de Colombia.

  14. Effect of Er{sup 3+} ions on the phase formation and properties of In{sub 2}O{sub 3}nanostructures crystallized upon microwave heating

    Energy Technology Data Exchange (ETDEWEB)

    Lemos, Samantha C.S.; Romeiro, Fernanda C.; Paula, Leonardo F. de [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Gonçalves, Rosana F. [UNIFESP, Universidade Federal de São Paulo, 09972-270 Diadema, SP (Brazil); Moura, Ana P. de [LIEC, Instituto de Química, Universidade Estadual Paulista, 14800-900 Araraquara, SP (Brazil); Ferrer, Mateus M.; Longo, Elson [INCTMN-UFSCar, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Patrocinio, Antonio Otavio T. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Lima, Renata C., E-mail: rclima@ufu.br [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil)

    2017-05-15

    Regular sized nanostructures of indium oxide (In{sub 2}O{sub 3}) were homogeneously grown using a facile route, i.e. a microwave-hydrothermal method combined with rapid thermal treatment in a microwave oven. The presence of Er{sup 3+} doping plays an important role in controlling the formation of cubic (bcc) and rhombohedral (rh) In{sub 2}O{sub 3} phases. The samples presented broad photoluminescent emission bands in the green-orange region, which were attributed to the recombination of electrons at oxygen vacancies. The photocatalytic activities of pure bcc-In{sub 2}O{sub 3} and a bcc-rh-In{sub 2}O{sub 3} mixture towards the UVA degradation of methylene blue (MB) were also evaluated. The results showed that Er{sup +3} doped In{sub 2}O{sub 3} exhibited the highest photocatalytic activity with a photonic efficiency three times higher than the pure oxide. The improved performance was attributed to the higher surface area, the greater concentration of electron traps due the presence of the dopant and the possible formation of heterojunctions between the cubic and rhombohedral phases. - Graphical abstract: Photodegradation curves as a function of irradiation time of the samples obtained upon rapid microwave heating. - Highlights: • Efficient and rapid microwave heating to obtain Er{sup 3+} doped In{sub 2}O{sub 3} nanostructures. • Er{sup 3+} ions doping is fundamental to stabilizing the crystalline rhombohedral phase. • Symmetry breaking induced by vacancies in the lattice leads to photoluminescence. • Surface area of doped sample was two times higher than the surface of pure oxide. • The presence of defects in the lattice structure favors photocatalytic activity.

  15. Aragonite crystals grown on bones by reaction of CO2 with nanostructured Ca(OH)2 in the presence of collagen. Implications in archaeology and paleontology.

    Science.gov (United States)

    Natali, Irene; Tempesti, Paolo; Carretti, Emiliano; Potenza, Mariangela; Sansoni, Stefania; Baglioni, Piero; Dei, Luigi

    2014-01-21

    The loss of mechanical properties affecting archeological or paleontological bones is often caused by demineralization processes that are similar to those driving the mechanisms leading to osteoporosis. One simple way to harden and to strengthen demineralized bone remains could be the in situ growth of CaCO3 crystals in the aragonite polymorph - metastable at atmospheric pressure -which is known to have very strong mechanical strength in comparison with the stable calcite. In the present study the controlled growth of aragonite crystals was achieved by reaction between atmospheric CO2 and calcium hydroxide nanoparticles in the presence of collagen within the deteriorated bones. In a few days the carbonation of Ca(OH)2 particles led to a mixture of calcite and aragonite, increasing the strength of the mineral network of the bone. Scanning electron microscopy coupled with energy dispersive X-ray spectroscopy (SEM-EDS) and Fourier transform infrared (FT-IR) spectrometry showed that aragonite crystallization was achieved. The effect of the aragonite crystal formation on the mechanical properties of the deteriorated bones was investigated by means of X-rays microtomography, helium porosimetry, atomic force microscopy (AFM), and Vickers microhardness techniques. All these data enabled to conclude that the strength of the bones increased of a factor of 50-70% with respect to the untreated bone. These results could have immediate impact for preserving archeological and paleontological bone remains.

  16. Synthesis, characterisation and functionalisation of ZnO and TiO.sub.2./sub. nanostructures: used as dopants in liquid crystal polymers

    Czech Academy of Sciences Publication Activity Database

    Topnani, N.; Hamplová, Věra; Kašpar, Miroslav; Novotná, Vladimíra; Gorecka, E.

    2014-01-01

    Roč. 41, č. 1 (2014), s. 91-100 ISSN 0267-8292 Institutional support: RVO:68378271 Keywords : liquid crystals * nanoparticles * polymers Subject RIV: JJ - Other Materials Impact factor: 2.486, year: 2014 http://dx.doi.org/10.1080/02678292.2013.837515

  17. Ge 1-xSn x stressors for strained-Ge CMOS

    Science.gov (United States)

    Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, B.; Eneman, G.; Clarysse, T.; Demeulemeester, J.; Vantomme, A.; Dekoster, J.; Caymax, M.; Loo, R.; Sakai, A.; Nakatsuka, O.; Zaima, S.

    2011-06-01

    In this paper, we propose the fabrication of whole strained Ge complementary metal-oxide-semiconductor (CMOS) with Ge 1-xSn x materials as stressors to outperform the state-of-the-art uniaxial compressive strained Si CMOS. Ge 1-xSn x materials have larger lattice constant than that of Ge, which can apply the strain into Ge channel region. Firstly, we have demonstrated p-type doped Ge 1-xSn x growth by using either B implantation or in situ Ga doping technique. In the B-implanted Ge 1-xSn x formation case, fully strained B-doped Ge 1-xSn x layers with no Sn precipitation can be obtained even after solid phase epitaxial regrowth (SPER). However, the serious dislocation generation in the layer was occurred during SPER. This is caused by the point defects introduced by B implantation. In order to avoid this crystal damage, we have also demonstrated in situ Ga-doped Ge 1-xSn x growth. In this case, we can achieve fully strained Ga-doped Ge 1-xSn x growth without Sn precipitation and any defect generation. Secondary, we have demonstrated the formation of Ni(Ge 1-ySn y) layers for metal/semiconductor contact and investigated the crystalline qualities. The formation of polycrystalline Ni(Ge 1-ySn y) layers on Ge 1-xSn x layers with Sn contents ranging from 2.0% to 6.5% after annealing at from 350 °C to 550 °C can be achieved. Additionally, in the case of the Ni/Ge 1-xSn x/Ge sample with a Sn content of 3.5%, an epitaxial Ni 2(Ge 1-ySn y) layer on a Ge 1-xSn x layer was formed. However, the surface roughness due to the agglomeration of Ni(Ge 1-xSn x) increases with increasing the Sn content and the annealing temperature. Therefore, a low thermal budget must be required for the formation of Ni(Ge 1-xSn x) with high Sn content.

  18. Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

    Science.gov (United States)

    Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

    2012-02-08

    Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

  19. Development of interatomic potential of Ge(1- x - y )Si x Sn y ternary alloy semiconductors for classical lattice dynamics simulation

    Science.gov (United States)

    Tomita, Motohiro; Ogasawara, Masataka; Terada, Takuya; Watanabe, Takanobu

    2018-04-01

    We provide the parameters of Stillinger-Weber potentials for GeSiSn ternary mixed systems. These parameters can be used in molecular dynamics (MD) simulations to reproduce phonon properties and thermal conductivities. The phonon dispersion relation is derived from the dynamical structure factor, which is calculated by the space-time Fourier transform of atomic trajectories in an MD simulation. The phonon properties and thermal conductivities of GeSiSn ternary crystals calculated using these parameters mostly reproduced both the findings of previous experiments and earlier calculations made using MD simulations. The atomic composition dependence of these properties in GeSiSn ternary crystals obtained by previous studies (both experimental and theoretical) and the calculated data were almost exactly reproduced by our proposed parameters. Moreover, the results of the MD simulation agree with the previous calculations made using a time-independent phonon Boltzmann transport equation with complicated scattering mechanisms. These scattering mechanisms are very important in complicated nanostructures, as they allow the heat-transfer properties to be more accurately calculated by MD simulations. This work enables us to predict the phonon- and heat-related properties of bulk group IV alloys, especially ternary alloys.

  20. Porphyrin-Based Nanostructures for Photocatalytic Applications

    Directory of Open Access Journals (Sweden)

    Yingzhi Chen

    2016-03-01

    Full Text Available Well-defined organic nanostructures with controllable size and morphology are increasingly exploited in optoelectronic devices. As promising building blocks, porphyrins have demonstrated great potentials in visible-light photocatalytic applications, because of their electrical, optical and catalytic properties. From this perspective, we have summarized the recent significant advances on the design and photocatalytic applications of porphyrin-based nanostructures. The rational strategies, such as texture or crystal modification and interfacial heterostructuring, are described. The applications of the porphyrin-based nanostructures in photocatalytic pollutant degradation and hydrogen evolution are presented. Finally, the ongoing challenges and opportunities for the future development of porphyrin nanostructures in high-quality nanodevices are also proposed.

  1. Optical Biosensors Based on Semiconductor Nanostructures

    Directory of Open Access Journals (Sweden)

    Raúl J. Martín-Palma

    2009-06-01

    Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

  2. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, Violetta K.; Pavlova, Lydia M., E-mail: fhim@mail.ru

    2014-06-25

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe{sub 4} grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe{sub 4} grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe{sub 4} crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition.

  3. Structural, thermal, and photoacoustic study of nanocrystalline Cr{sub 3}Ge produced by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S. [Departamento de Engenharia Mecânica, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Poffo, C. M. [Universidade Federal de Santa Catarina, Campus de Araranguá, 88900-000 Araranguá, Santa Catarina (Brazil); Borges, Z. V. [Departamento de Física, Universidade Federal do Amazonas, 3000 Japiim, 69077-000 Manaus, Amazonas (Brazil); Lima, J. C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Física, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Biasi, R. S. de [Seção de Engenharia Mecânica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro (Brazil)

    2015-10-21

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr{sub 3}Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr{sub 11}Ge{sub 19} and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr{sub 3}Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr{sub 3}Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr{sub 3}Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  4. PREFACE: Self-organized nanostructures

    Science.gov (United States)

    Rousset, Sylvie; Ortega, Enrique

    2006-04-01

    the EUROCORES SONS Programme under the auspices of the European Science Foundation and the VI Framework Programme of the European Community. It was also funded by CNRS `formation permanente'. Major topics relevant to self-organization are covered in these papers. The first two papers deal with the physics of self-organized nucleation and growth. Both metal and semiconductor templates are investigated. The paper by Meyer zu Heringdorf focuses on the mesoscopic patterns formed by the Au-induced faceting of vicinal Si (001). Repain et al describe how uniform and long-range ordered nanostructures are built on a surface by using nucleation on a point-defect array. Electronic properties of such self-organized systems are reviewed by Mugarza and Ortega. The next three papers deal with molecules and self-organization. In the paper presented by Kröger, molecules are deposited on vicinal Au surfaces and are studied by STM. A very active field in self-organized nanostructures is the chemical route for nanoparticle synthesis. The paper by Piléni deals with self-organization of inorganic crystals produced by evaporation of a solution, also called colloids. Their physical properties are also treated. Gacoin et al illustrate chemical synthesis, including the template approach, using organized mesoporous silica films for the production of semiconductor or metal arrays of particles. An alternative method is developed in the paper by Allongue and Maroun which is the electrochemical method of building arrays of nanostructures. Ultimately, self-organization is a very interdisciplinary field. There is also an attempt in this issue to present some of the challenges using biology. The paper by Belamie et al deals with the self-assembly of biological macromolecules, such as chitin and collagen. Finally, Molodtsov and co-workers describe how a biological template can be used in order to achieve novel materials made of hybrid metallo-organic nanostructures.

  5. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    Directory of Open Access Journals (Sweden)

    Yongming Hu

    2012-04-01

    Full Text Available Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.

  6. Crystal structure, magnetization, {sup 125}Te NMR, and Seebeck coefficient of Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb)

    Energy Technology Data Exchange (ETDEWEB)

    Levin, E.M., E-mail: levin@iastate.edu [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Cooling, C. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Bud’ko, S.L. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Straszheim, W.E. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Lograsso, T.A. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Materials Sciences and Engineering, Iowa State University, Ames, IA 50011 (United States)

    2017-05-01

    GeTe, a self-doping semiconductor, is a well-known base compound for thermoelectric and phase-change materials. It is known, that replacement of Ge in Ag{sub 6.5}Sb{sub 6.5}Ge{sub 37}Te{sub 50} (TAGS-85) material by rare earth Dy significantly enhances both the power factor and thermoelectric figure of merit. Here we demonstrate how replacement of Ge in GeTe by rare earths with different atomic size and localized magnetic moments affect XRD patterns, magnetization, {sup 125}Te NMR spectra and spin-lattice relaxation, and the Seebeck coefficient of the alloys with a nominal composition of Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb). SEM, EDS and WDS data show that rare earth atoms in the matrix are present at smaller extent compared to a nominal composition, whereas rare earth also is present in inclusions. Rare earths affect the Seebeck coefficient, which is a result of interplay between the reduction due to higher carrier concentration and enhancement due to magnetic contribution. The effect of replacement of Ge in GeTe by Dy on the Seebeck coefficient is smaller than that observed in Ag{sub 6.5}Sb{sub 6.5}Ge{sub 36} Te{sub 50}Dy{sub 1}. This can be explained by larger amount of rare earth, which can be embedded into the lattice of materials containing [Ag + Sb] atomic pairs and possible effect from these pairs. - Highlights: • The effects of rare earth in Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb) are studied. • Rare earth atoms in the matrix are present at smaller extent compared to a nominal composition. • The effect on the Seebeck coefficient is a result from carrier concentration and magnetic contribution.

  7. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  8. Synthesis and characterization of germanium monosulphide (GeS)

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  9. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  10. Astronomical large Ge immersion grating by Canon

    Science.gov (United States)

    Sukegawa, Takashi; Suzuki, Takeshi; Kitamura, Tsuyoshi

    2016-07-01

    Immersion grating is a powerful optical device for thee infrared high-resolution spectroscope. Germanium (GGe) is the best material for a mid-infrared immersion grating because of Ge has very large reflective index (n=4.0). On the other hands, there is no practical Ge immersion grating under 5umm use. It was very difficult for a fragile IR crystal to manufacture a diffraction grating precisely. Our original free-forming machine has accuracy of a few nano-meter in positioning and stability. We already fabricated the large CdZnTe immersion grating. (Sukegawa et al. (2012), Ikeda et al. (2015)) Wee are developing Ge immersion grating that can be a good solution for high-resolution infrared spectroscopy with the large ground-based/space telescopes. We succeeded practical Ge immersion grating with the grooved area off 75mm (ruled direction) x 119mm (grove width) and the blaze angle of 75 degrees. Our astronomical large Ge immersion grating has the grooved area of 155mm (ruled direction) x 41mmm (groove width) and groove pitch off 91.74um. We also report optical performance of astronomical large Ge immersion grating with a metal coating on the diffraction surface.

  11. Metal-organic framework templated electrodeposition of functional gold nanostructures

    International Nuclear Information System (INIS)

    Worrall, Stephen D.; Bissett, Mark A.; Hill, Patrick I.; Rooney, Aidan P.; Haigh, Sarah J.; Attfield, Martin P.; Dryfe, Robert A.W.

    2016-01-01

    Highlights: • Electrodeposition of anisotropic Au nanostructures templated by HKUST-1. • Au nanostructures replicate ∼1.4 nm pore spaces of HKUST-1. • Encapsulated Au nanostructures active as SERS substrate for 4-fluorothiophenol. - Abstract: Utilizing a pair of quick, scalable electrochemical processes, the permanently porous MOF HKUST-1 was electrochemically grown on a copper electrode and this HKUST-1-coated electrode was used to template electrodeposition of a gold nanostructure within the pore network of the MOF. Transmission electron microscopy demonstrates that a proportion of the gold nanostructures exhibit structural features replicating the pore space of this ∼1.4 nm maximum pore diameter MOF, as well as regions that are larger in size. Scanning electron microscopy shows that the electrodeposited gold nanostructure, produced under certain conditions of synthesis and template removal, is sufficiently inter-grown and mechanically robust to retain the octahedral morphology of the HKUST-1 template crystals. The functionality of the gold nanostructure within the crystalline HKUST-1 was demonstrated through the surface enhanced Raman spectroscopic (SERS) detection of 4-fluorothiophenol at concentrations as low as 1 μM. The reported process is confirmed as a viable electrodeposition method for obtaining functional, accessible metal nanostructures encapsulated within MOF crystals.

  12. Surface nanostructuring by ion-induced localized plasma expansion in zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    El-Said, A. S., E-mail: elsaid@kfupm.edu.sa, E-mail: a.s.el-said@hzdr.de [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden (Germany); Physics Department, Faculty of Science, Mansoura University, 35516 Mansoura (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said 42521 (Egypt); Centre for Theoretical Physics, British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); Djebli, M. [Theoretical Physics Laboratory, Faculty of Physics USTHB, B.P. 32 Bab Ezzour, 16079 Algiers (Algeria)

    2014-06-09

    Creation of hillock-like nanostructures on the surface of zinc oxide single crystals by irradiation with slow highly charged ions is reported. At constant kinetic energy, the nanostructures were only observed after irradiation with ions of potential energies above a threshold between 19.1 keV and 23.3 keV. The size of the nanostructures increases as a function of potential energy. A plasma expansion approach is used to explain the nanostructures creation. The calculations showed that the surface nanostructures became taller with the increase of ionic temperature. The influence of charged cluster formation and the relevance of their polarity are discussed.

  13. Stress evolution of Ge nanocrystals in dielectric matrices

    Science.gov (United States)

    Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

    2018-05-01

    Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

  14. Vicinal surfaces for functional nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Appelstrasse 2, D-30167 Hannover (Germany)], E-mail: tegenkamp@fkp.uni-hannover.de

    2009-01-07

    Vicinal surfaces are currently the focus of research. The regular arrangements of atomic steps on a mesoscopic scale reveal the possibility to functionalize these surfaces for technical applications, e.g. nanowires, catalysts, etc. The steps of the vicinal surface are well-defined defect structures of atomic size for nucleation of low-dimensional nanostructures. The concentration and therefore the coupling between the nanostructures can be tuned over a wide range by simply changing the inclination angle of the substrate. However, the coupling of these nano-objects to the substrate is just as important in controlling their electronic or chemical properties and making a functionality useable. On the basis of stepped insulating films, these aspects are fulfilled and will be considered in the first part of this review. Recent results for the epitaxial growth of wide bandgap insulating films (CaF{sub 2}, MgO, NaCl, BaSrO) on metallic and semiconducting vicinal substrates (Si(100), Ge(100), Ag(100)) will be presented. The change of the electronic structure, the adsorption behavior as well as the kinetics and energetics of color centers in the presence of steps is discussed. The successful bridging of the gap between the atomic and mesoscopic world, i.e. the functionalization of vicinal surfaces by nanostructures, is demonstrated in the second part by metal adsorption on semiconducting surfaces. For (sub)monolayer coverage these systems have in common that the surface states do not hybridize with the support, i.e. the semiconducting surfaces are insulating. Here I will focus on the latest results of macroscopic transport measurements on Pb quantum wires grown on vicinal Si(111) showing indeed a one-dimensional transport behavior. (topical review)

  15. High-Pressure Synthesis and Electronic Structure of a New Superconducting Strontium Germanide (SrGe3) Containing Ge2 Dumbbells.

    Science.gov (United States)

    Nishikawa, Takuya; Fukuoka, Hiroshi; Inumaru, Kei

    2015-08-03

    We obtained a new strontium germanide (SrGe3) by high-pressure and high-temperature synthesis. It was prepared at 13 GPa and 1100 °C. The space group and cell constants are I4/mmm (No. 139), a = 7.7800(8) Å, c = 12.0561(13) Å, and V = 729.74(17) Å(3). SrGe3 crystallizes in the CaSi3 structure composed of Ge-Ge dumbbells and Sr(2+) ions. SrGe3 is a type II superconductor with a transition temperature of 6.0 K.

  16. Hypersonic phononic crystals.

    Science.gov (United States)

    Gorishnyy, T; Ullal, C K; Maldovan, M; Fytas, G; Thomas, E L

    2005-03-25

    In this Letter we propose the use of hypersonic phononic crystals to control the emission and propagation of high frequency phonons. We report the fabrication of high quality, single crystalline hypersonic crystals using interference lithography and show that direct measurement of their phononic band structure is possible with Brillouin light scattering. Numerical calculations are employed to explain the nature of the observed propagation modes. This work lays the foundation for experimental studies of hypersonic crystals and, more generally, phonon-dependent processes in nanostructures.

  17. Fabrication of SiGe/Ge core-shell nanowires by oxidation of SiGe

    OpenAIRE

    Kløw, Frode

    2011-01-01

    As Si technology is reaching its limits in solar cell and transistor applications, ways to improve these devices are being investigated. This study looks at the fabrication process of SiGe/Ge core-shell nanowires (NWs). Larger SiGe column structures can be oxidized to reduce their size and create a SiGe/Ge core-shell structure with a layer of SiO2 on the outside. Initially, SiGe dry oxidation was investigated in epitaxially grown SiGe films with 15% and 20% Ge, focusing on the Ge pileup r...

  18. [Ge=Ge](4-) Dumbbells in the Zintl Phase Li3NaGe2.

    Science.gov (United States)

    Ruschewitz, Uwe

    2016-03-01

    Ge-Ge double bonds: The reaction of elemental lithium, sodium, and germanium at 750 °C results in the Zintl phase Li3NaGe2 , which, according to the Zintl-Klemm concept, contains [Ge=Ge](4-) dumbbells with unprecedented short Ge-Ge distances. Based on structural, spectroscopic, and theoretical considerations, convincing evidence is given that Ge-Ge double bonds are in fact present. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  20. Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

    Directory of Open Access Journals (Sweden)

    Ionel Stavarache

    2016-10-01

    Full Text Available Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 % into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1, fast response time (0.5 µs at 4 kHz and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si

  1. The nanostructure problem

    International Nuclear Information System (INIS)

    Billinge, S.

    2010-01-01

    Diffraction techniques are making progress in tackling the difficult problem of solving the structures of nanoparticles and nanoscale materials. The great gift of x-ray crystallography has made us almost complacent in our ability to locate the three-dimensional coordinates of atoms in a crystal with a precision of around 10 -4 nm. However, the powerful methods of crystallography break down for structures in which order only extends over a few nanometers. In fact, as we near the one hundred year mark since the birth of crystallography, we face a resilient frontier in condensed matter physics: our inability to routinely and robustly determine the structure of complex nanostructured and amorphous materials. Knowing the structure and arrangement of atoms in a solid is so fundamental to understanding its properties that the topic routinely occupies the early chapters of every solid-state physics textbook. Yet what has become clear with the emergence of nanotechnology is that diffraction data alone may not be enough to uniquely solve the structure of nanomaterials. As part of a growing effort to incorporate the results of other techniques to constrain x-ray refinements - a method called 'complex modeling' which is a simple but elegant approach for combining information from spectroscopy with diffraction data to solve the structure of several amorphous and nanostructured materials. Crystallography just works, so we rarely question how and why this is so, yet understanding the physics of diffraction can be very helpful as we consider the nanostructure problem. The relationship between the electron density distribution in three dimensions (i.e., the crystal structure) and an x-ray diffraction pattern is well established: the measured intensity distribution in reciprocal space is the square of the Fourier transform of the autocorrelation function of the electron density distribution ρ(r). The fact that we get the autocorrelation function (rather than just the density

  2. Phonon engineering for nanostructures.

    Energy Technology Data Exchange (ETDEWEB)

    Aubry, Sylvie (Stanford University); Friedmann, Thomas Aquinas; Sullivan, John Patrick; Peebles, Diane Elaine; Hurley, David H. (Idaho National Laboratory); Shinde, Subhash L.; Piekos, Edward Stanley; Emerson, John Allen

    2010-01-01

    Understanding the physics of phonon transport at small length scales is increasingly important for basic research in nanoelectronics, optoelectronics, nanomechanics, and thermoelectrics. We conducted several studies to develop an understanding of phonon behavior in very small structures. This report describes the modeling, experimental, and fabrication activities used to explore phonon transport across and along material interfaces and through nanopatterned structures. Toward the understanding of phonon transport across interfaces, we computed the Kapitza conductance for {Sigma}29(001) and {Sigma}3(111) interfaces in silicon, fabricated the interfaces in single-crystal silicon substrates, and used picosecond laser pulses to image the thermal waves crossing the interfaces. Toward the understanding of phonon transport along interfaces, we designed and fabricated a unique differential test structure that can measure the proportion of specular to diffuse thermal phonon scattering from silicon surfaces. Phonon-scale simulation of the test ligaments, as well as continuum scale modeling of the complete experiment, confirmed its sensitivity to surface scattering. To further our understanding of phonon transport through nanostructures, we fabricated microscale-patterned structures in diamond thin films.

  3. Freestanding nanostructures via reactive ion beam angled etching

    Directory of Open Access Journals (Sweden)

    Haig A. Atikian

    2017-05-01

    Full Text Available Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond. Reported quality factors are approximately 30 000 and 286 000, respectively. The devices show uniformity across 25 mm samples, a significant improvement over comparable techniques yielding freestanding nanostructures.

  4. Properties of Deterministic Aperiodic Photonic Nanostructures for Biosensors

    DEFF Research Database (Denmark)

    Paulsen, Moritz; Jahns, Sabrina; Neustock, Lars Thorben

    Periodic dielectric photonic nanostructures have been used extensively as transducers in refractive index sensors. Photonic crystal slabs exhibit sharp resonances in the transmission and reflection spectrum. Changes in resonance wavelength, intensity, or quality factor are measured to monitor cha...... and plasmonics applications. Laser and Photonics Reviews, 6(2), 178-218. [4] Neustock, L. T., Jahns, S., Adam, J., Gerken, M. (2016). Optical waveguides with compound multiperiodic grating nanostructures for refractive index sensing. Journal of Sensors, 501, 6174527....

  5. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  6. Shape Evolution of Detached Bridgman Crystals Grown in Microgravity

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.

    2015-01-01

    A theory describing the shape evolution of detached Bridgman crystals in microgravity has been developed. A starting crystal of initial radius r0 will evolve to one of the following states: Stable detached gap; Attachment to the crucible wall; Meniscus collapse. Only crystals where alpha plus omega is great than 180 degrees will achieve stable detached growth in microgravity. Results of the crystal shape evolution theory are consistent with predictions of the dynamic stability of crystallization (Tatarchenko, Shaped Crystal Growth, Kluwer, 1993). Tests of transient crystal evolution are planned for ICESAGE, a series of Ge and GeSi crystal growth experiments planned to be conducted on the International Space Station (ISS).

  7. Novel nanostructures for next generation dye-sensitized solar cells

    KAUST Repository

    Tétreault, Nicolas

    2012-01-01

    Herein, we review our latest advancements in nanostructured photoanodes for next generation photovoltaics in general and dye-sensitized solar cells in particular. Bottom-up self-assembly techniques are developed to fabricate large-area 3D nanostructures that enable enhanced charge extraction and light harvesting through optical scattering or photonic crystal effects to improve photocurrent, photovoltage and fill factor. Using generalized techniques to fabricate specialized nanostructures enables specific optoelectronic and physical characteristics like conduction, charge extraction, injection, recombination and light harvesting but also helps improve mechanical flexibility and long-term stability in low cost materials. © 2012 The Royal Society of Chemistry.

  8. Terminating DNA Tile Assembly with Nanostructured Caps.

    Science.gov (United States)

    Agrawal, Deepak K; Jiang, Ruoyu; Reinhart, Seth; Mohammed, Abdul M; Jorgenson, Tyler D; Schulman, Rebecca

    2017-10-24

    Precise control over the nucleation, growth, and termination of self-assembly processes is a fundamental tool for controlling product yield and assembly dynamics. Mechanisms for altering these processes programmatically could allow the use of simple components to self-assemble complex final products or to design processes allowing for dynamic assembly or reconfiguration. Here we use DNA tile self-assembly to develop general design principles for building complexes that can bind to a growing biomolecular assembly and terminate its growth by systematically characterizing how different DNA origami nanostructures interact with the growing ends of DNA tile nanotubes. We find that nanostructures that present binding interfaces for all of the binding sites on a growing facet can bind selectively to growing ends and stop growth when these interfaces are presented on either a rigid or floppy scaffold. In contrast, nucleation of nanotubes requires the presentation of binding sites in an arrangement that matches the shape of the structure's facet. As a result, it is possible to build nanostructures that can terminate the growth of existing nanotubes but cannot nucleate a new structure. The resulting design principles for constructing structures that direct nucleation and termination of the growth of one-dimensional nanostructures can also serve as a starting point for programmatically directing two- and three-dimensional crystallization processes using nanostructure design.

  9. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    †On leave from: Malda College, Malda 732 101, India ... a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless ... Secondly, the preparation of the bromine-passivated Si substrates involves a wet chemi- cal treatment. Since in liquid treatment, surfaces are prone to being difficult to reproduce.

  10. Advanced Magnetic Nanostructures

    CERN Document Server

    Sellmyer, David

    2006-01-01

    Advanced Magnetic Nanostructures is devoted to the fabrication, characterization, experimental investigation, theoretical understanding, and utilization of advanced magnetic nanostructures. Focus is on various types of 'bottom-up' and 'top-down' artificial nanostructures, as contrasted to naturally occurring magnetic nanostructures, such as iron-oxide inclusions in magnetic rocks, and to structures such as perfect thin films. Chapter 1 is an introduction into some basic concepts, such as the definitions of basic magnetic quantities. Chapters 2-4 are devoted to the theory of magnetic nanostructures, Chapter 5 deals with the characterization of the structures, and Chapters 6-10 are devoted to specific systems. Applications of advanced magnetic nanostructures are discussed in Chapters11-15 and, finally, the appendix lists and briefly discusses magnetic properties of typical starting materials. Industrial and academic researchers in magnetism and related areas such as nanotechnology, materials science, and theore...

  11. Nanostructured composite reinforced material

    Science.gov (United States)

    Seals, Roland D [Oak Ridge, TN; Ripley, Edward B [Knoxville, TN; Ludtka, Gerard M [Oak Ridge, TN

    2012-07-31

    A family of materials wherein nanostructures and/or nanotubes are incorporated into a multi-component material arrangement, such as a metallic or ceramic alloy or composite/aggregate, producing a new material or metallic/ceramic alloy. The new material has significantly increased strength, up to several thousands of times normal and perhaps substantially more, as well as significantly decreased weight. The new materials may be manufactured into a component where the nanostructure or nanostructure reinforcement is incorporated into the bulk and/or matrix material, or as a coating where the nanostructure or nanostructure reinforcement is incorporated into the coating or surface of a "normal" substrate material. The nanostructures are incorporated into the material structure either randomly or aligned, within grains, or along or across grain boundaries.

  12. Nitridogermanate Nitrides Sr7[GeN4]N2 and Ca7[GeN4]N2

    OpenAIRE

    Junggeburth, Sebastian C.; Oeckler, Oliver; Johrendt, Dirk; Schnick, Wolfgang

    2008-01-01

    The alkaline earth nitridogermanate nitrides AE7[GeN4]N2 (AE = Ca, Sr) have been synthesized using a Na flux technique in sealed Ta tubes. According to single-crystal X-ray diffraction the isotypic compounds crystallize in space group Pbcn (No. 60) with Z = 4, (Sr7[GeN4]N2: a = 1152.6(2), b = 658.66(13), c = 1383.6(3) pm, V = 1050.5(4) × 106 pm3, R1 = 0.049; Ca7[GeN4]N2: a = 1082.6(2), b = 619.40(12), c = 1312.1(3) pm, V = 879.8(3) × 106 pm3, R1 = 0.016). Owing to the high N/Ge ratio, the com...

  13. Nanostructured Materials for Magnetoelectronics

    CERN Document Server

    Mikailzade, Faik

    2013-01-01

    This book provides an up-to-date review of nanometer-scale magnetism and focuses on the investigation of the basic properties of magnetic nanostructures. It describes a wide range of physical aspects together with theoretical and experimental methods. A broad overview of the latest developments in this emerging and fascinating field of nanostructured materials is given with emphasis on the practical understanding and operation of submicron devices based on nanostructured magnetic materials.

  14. Nonlinear phenomenon in nanostructures creation by fast cluster ions

    Science.gov (United States)

    Moslem, W. M.; El-Said, A. S.; Sabry, R.; Shalouf, A.; El-Labany, S. K.; Bahlouli, H.

    2017-01-01

    The development of accelerators technology offers a new window for the creation of surface nanostructures in an efficient and accurate way. The use of 30 MeV C60 cluster ions enables the creation of nano-hillocks of size larger than the ones produced by GeV monoatomic ions. The physical mechanism underlying the realization of such nanostructures is elucidated using a plasma expansion approach. Numerical analysis showed that increasing the ionic temperature (number density) ratios would lead to decrease (increase) the nano-hillocks height.

  15. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  16. Development of twin Ge detector and its performance

    CERN Document Server

    Shigetome, Y

    2001-01-01

    Twin Ge detector which consists of two large Ge crystals, closely packed in a common housing, has been designed and developed to realize high detection efficiency and peak-to-total ratio (P/T) for high-energy photons in the energy range 10-30 MeV. Performance of the twin Ge detector in an energy range up to 30 MeV is calculated by Monte Carlo simulation method. It is shown that this detector allows extending an energy range for high-resolution photon spectroscopy to over 10 MeV.

  17. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  18. Nanostructured layers of thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Urban, Jeffrey J.; Lynch, Jared; Coates, Nelson; Forster, Jason; Sahu, Ayaskanta; Chabinyc, Michael; Russ, Boris

    2018-01-30

    This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.

  19. SU-75: a disordered Ge10 germanate with pcu topology.

    Science.gov (United States)

    Huang, Shiliang; Inge, A Ken; Yang, Sihai; Christensen, Kirsten E; Zou, Xiaodong; Sun, Junliang

    2012-10-28

    A disordered open-framework germanate, denoted as SU-75, was synthesized under hydrothermal conditions using diethylenetriamine (dien) or alternatively 1,4-diaminobutane (dab) as the structure directing agent (SDA). SU-75 crystallizes in a tetragonal space group I42d (No. 122) with a = 18.145(3) Å and c = 41.701(9) Å. The three-dimensional (3D) framework is built from Ge(10)(O,OH)(28) (Ge(10)) clusters that are connected following the pcu (primitive cubic) net topology. SU-75 has 10-, 11- and 12-ring channels along the a- and b-axes and channels with alternating 8-, 10-, 12-, 10-ring openings along the c-axis. The framework exhibits a serious disorder, resulted from two possible connectivities between the units of four Ge(10) clusters (4Ge(10) unit). The chemical formula of SU-75 is |(H(2)SDA)(2)(H(2)O)(n)|[Ge(10)O(21)(OH)(2)] (SDA = dien or dab, n = 5-6), determined by combining single crystal synchrotron X-ray diffraction, thermogravimetric analysis (TGA) and CHN elemental analysis. A superoctahedron is introduced to simplify the description of the connectivity of the Ge(10) clusters and to illustrate the disorder. This is also used to compare the structure of SU-75 with those of related Ge(10) germanates.

  20. Isothermal sections of the state diagram for the Pr-Ni-Ge system at 870 (0-0,5Pr) and 670 K (0,5-1Pr)

    International Nuclear Information System (INIS)

    Fedyna, M.F.; Pecharskij, V.K.; Bodak, O.I.

    1987-01-01

    Method of X-ray phase and microstructural analyses were used to study Pr-Ni-Ge ternary system at 870K (0-0.50 at.fractions of Pr) and 670K (0.50-1.00 at.fractions of Pr). 11 ternary compounds exist in the system: Pr 1-x (NiGe) 13 (x=0.24), PrNi 2 Ge 2 , Pr 2 Ni 3 Ge 5 , PrNiGe 3 , Pr 2 NiGe 6 , Pr 3 Ni 4 Ge 4 , PrNi (1-x) Ge 2 (x=0.33), PrNiGe, Pr(NiGe) 2-x (x=0.14), Pr 3 NiGe 2 , ∼Pr 5 NiGe 4 . Crystal structure was determined for seven ternary compounds

  1. Interface traps and dangling-bond defects in (100)Ge/HfO2

    Science.gov (United States)

    Afanas'ev, V. V.; Fedorenko, Y. G.; Stesmans, A.

    2005-07-01

    Combined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the HfO2 and SiO2. No dangling bond centers associated with Ge crystal surface atoms are detected. Only paramagnetic defects in the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric traps related to the dangling bonds (Pb-type centers) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which show no correlation with paramagnetic centers and are resistant to passivation by hydrogen.

  2. Germanium Dumbbells in a New Superconducting Modification of BaGe3.

    Science.gov (United States)

    Castillo, Rodrigo; Baranov, Alexey I; Burkhardt, Ulrich; Cardoso-Gil, Raul; Schnelle, Walter; Bobnar, Matej; Schwarz, Ulrich

    2016-05-02

    We report the high-pressure high-temperature synthesis (P = 15 GPa, T = 1300 K) of BaGe3(tI32) adopting a CaGe3-type crystal structure. Bonding analysis reveals layers of covalently bonded germanium dumbbells being involved in multicenter Ba-Ge interactions. Physical measurements evidence metal-type electrical conductivity and a transition to a superconducting state at 6.5 K. Chemical bonding and physical properties of the new modification are discussed in comparison to the earlier described hexagonal form BaGe3(hP8) with a columnar arrangement of Ge3 triangles.

  3. Crystal heating on the JUMBO double crystal monochromator at SSRL

    International Nuclear Information System (INIS)

    Rowen, M.; Waldhauer, A.; Pianetta, P.

    1986-01-01

    Heating by intense synchrotron radiation causes the lattice of the first crystal in the JUMBO double crystal monochromator at SSRL to expand. Because the two crystals no longer have the same lattice spacing, they diffract X-rays of the same wavelength at different angles. This causes shifts in energy calibration and beam movement at the sample with change in photon energy or as the current in the storage ring decays. A simple thermal model that predicts the change in wavelength and angle of the monochromatic beam is described. These shifts are proportional to I sin theta tan theta, where I is the SPEAR ring current and theta is the angle of the beam incident on the first crystal. Heating experiments were conducted with Ge(111), quartz(10anti 10), and InSb(111) crystals. Bragg angle shifts of up to 0.25 0 were measured with high precision encoders mounted directly on the crystal goniometers. Photon energy calibration shifts of up to 3.5 eV (at 1700 eV) were measured. Preliminary results show good agreement with the model for Ge and quartz crystals, but not for InSb crystals. Further study is needed to refine the model for Ge and quartz crystals and to determine a better one for InSb. (orig.)

  4. Synthesis, characterization and luminescence properties of zinc oxide nanostructures

    Science.gov (United States)

    Khan, Aurangzeb

    Zinc oxide (ZnO) represents an important semiconductor material due to its wideband gap (3.37 eV at room temperature), large exciton binding energy (60 meV), high optical gain, and luminescence as well as piezoelectric properties [1]. From the 1960s, ZnO thin films have been extensively studied because of their applications as sensors, transducers and catalysts [2]. Since a few decades, one-dimensional nanostructures have become the focus point in nanoscience and nanotechnology. Nanostructures are considered to have unique physical, chemical, catalytic and optical properties that are profoundly different from their bulk counterparts. Since the discovery of carbon nanotubes (CNTs) in 1991, a string of research activities led to the growth and characterization of nanostructures of various materials including semiconductors such as Si, Ge and also compound semiconductors such as InP, GaAs, GaN and ZnO. ZnO is a versatile material and has shown potential for the synthesis of various types of nanostructures such as nanocombs, nanorings, nanohelices/nanosprings, nanobelts, nanowires and nanocages under specific growth conditions and probably has the richest family of nanostructures among all materials, both in structure and properties. This dissertation presents the synthesis, characterization and luminescence properties of ZnO nanostructures with the development of a PVD system. The nanostructures of ZnO are synthesized on various kinds of substrates such as Silicon, Sapphire and Alumina. We have synthesized a large family of nanostructures such as nanowires, nanorods, nanobelts, aligned nanorods, nanosheets, nanospheres, nanocombs, microspheres, hexagons etc. The nanostructures are then characterized by SEM, EDX, TEM, HRTEM, XRD, Raman Spectroscopy, PL and CL. From the characterization of the materials, we observed that these nanostructures are of good crystalline quality. PL and CL spectra reveal that all the nanostructures emit a ˜380 nm (UV) usually called the near

  5. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  6. First-principles calculations on the origin of ferromagnetism in transition-metal doped Ge

    Science.gov (United States)

    Shinya, Hikari; Fukushima, Tetsuya; Masago, Akira; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2017-09-01

    Many researchers have shown an interest in Ge-based dilute magnetic semiconductors (DMSs) due to potential advantages for semiconductor spintronics applications. There has been great discussion about mechanisms of experimentally observed ferromagnetism in (Ge,Fe) and (Ge,Mn). We investigate the electronic structures, structural stabilities, magnetic exchange coupling constants, and Curie temperature of Ge-based DMSs, and clarify origins of the ferromagnetism, on the basis of density functional theory calculations. In both the (Ge,Fe) and (Ge,Mn) cases, the inhomogeneous distribution of the magnetic impurities plays an important role to determine the magnetic states; however, physical mechanisms of the ferromagnetism in these two materials are completely different. By the spinodal nanodecomposition, the Fe impurities in Ge gather together with keeping the diamond structure, so that the number of the first-nearest-neighbor Fe pairs with strong ferromagnetic interaction increases. Therefore, the Curie temperature drastically increases with the progress of the annealing. Our cluster expansion method clearly reveals that the other ordered compounds with different crystal structures such as Ge3Mn5 and Ge8Mn11 are easily generated in the (Ge,Mn) system. The estimated Curie temperature of Ge3Mn5 is in agreement with the observed Curie temperature in experiments. It should be considered that the precipitation of the ferromagnetic Ge3Mn5 clusters is an origin of high Curie temperature in (Ge,Mn).

  7. Analytical response function for planar Ge detectors

    Science.gov (United States)

    García-Alvarez, Juan A.; Maidana, Nora L.; Vanin, Vito R.; Fernández-Varea, José M.

    2016-04-01

    We model the response function (RF) of planar HPGe x-ray spectrometers for photon energies between around 10 keV and 100 keV. The RF is based on the proposal of Seltzer [1981. Nucl. Instrum. Methods 188, 133-151] and takes into account the full-energy absorption in the Ge active volume, the escape of Ge Kα and Kβ x-rays and the escape of photons after one Compton interaction. The relativistic impulse approximation is employed instead of the Klein-Nishina formula to describe incoherent photon scattering in the Ge crystal. We also incorporate a simple model for the continuous component of the spectrum produced by the escape of photo-electrons from the active volume. In our calculations we include external interaction contributions to the RF: (i) the incoherent scattering effects caused by the detector's Be window and (ii) the spectrum produced by photo-electrons emitted in the Ge dead layer that reach the active volume. The analytical RF model is compared with pulse-height spectra simulated using the PENELOPE Monte Carlo code.

  8. High-capacity nanostructured germanium-containing materials and lithium alloys thereof

    Science.gov (United States)

    Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

    2010-08-24

    Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0Ge.sub.(z-1), where 0

  9. Single crystal growth of europium and ytterbium based intermetallic ...

    Indian Academy of Sciences (India)

    Abstract. This article covers the use of indium as a potential metal solvent for the crystal growth of europium and ytterbium-based intermetallic compounds. A brief view about the advantage of metal flux technique and the use of indium as reactive and non-reactive flux are outlined. Large single crystals of EuGe2, EuCoGe3.

  10. Upconversion in Nanostructured Materials: From Optical Tuning to Biomedical Applications.

    Science.gov (United States)

    Sun, Tianying; Ai, Fujin; Zhu, Guangyu; Wang, Feng

    2018-02-16

    Photon upconversion that is characterized by high-energy photon emission followed by lower-energy excitation has been conventionally studied in bulk materials for several decades. This unique nonlinear luminescence process has become a subject of great attention since 2000 when upconverted emission was demonstrated in nanostructured crystals. In comparison with their bulk counterparts, nanostructured materials provide more room for optical fine-tuning by allowing flexible compositional integration and structural engineering. Moreover, the high colloidal stability of nanoparticles coupled with high amenability to surface functionalization opens up a number of new applications for upconversion, especially in the fields of biology and life science. In this focus review, we discuss recent developments in upconversion materials through nanostructural design and review emerging biomedical applications that involve these nanostructured upconversion materials. We also attempt to highlight challenging problems of these nanomaterials that constrain further progress in utilizing upconversion processes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Ge nano-layer fabricated by high-fluence low-energy ion implantation

    International Nuclear Information System (INIS)

    Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

    2006-01-01

    A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

  12. Modular color evolution facilitated by a complex nanostructure in birds.

    Science.gov (United States)

    Eliason, Chad M; Maia, Rafael; Shawkey, Matthew D

    2015-02-01

    The way in which a complex trait varies, and thus evolves, is critically affected by the independence, or modularity, of its subunits. How modular designs facilitate phenotypic diversification is well studied in nonornamental (e.g., cichlid jaws), but not ornamental traits. Diverse feather colors in birds are produced by light absorption by pigments and/or light scattering by nanostructures. Such structural colors are deterministically related to the nanostructures that produce them and are therefore excellent systems to study modularity and diversity of ornamental traits. Elucidating if and how these nanostructures facilitate color diversity relies on understanding how nanostructural traits covary, and how these traits map to color. Both of these remain unknown in an evolutionary context. Most dabbling ducks (Anatidae) have a conspicuous wing patch with iridescent color caused by a two-dimensional photonic crystal of small (100-200 nm) melanosomes. Here, we ask how this complex nanostructure affects modularity of color attributes. Using a combination of electron microscopy, spectrophotometry, and comparative methods, we show that nanostructural complexity causes functional decoupling and enables independent evolution of different color traits. These results demonstrate that color diversity is facilitated by how nanostructures function and may explain why some birds are more color-diverse than others. © 2014 The Author(s). Evolution © 2014 The Society for the Study of Evolution.

  13. Hydrothermal synthetic strategies of inorganic semiconducting nanostructures.

    Science.gov (United States)

    Shi, Weidong; Song, Shuyan; Zhang, Hongjie

    2013-07-07

    Because of their unique chemical and physical properties, inorganic semiconducting nanostructures have gradually played a pivotal role in a variety of research fields, including electronics, chemical reactivity, energy conversion, and optics. A major feature of these nanostructures is the quantum confinement effect, which strongly depends on their size, shape, crystal structure and polydispersity. Among all developed synthetic methods, the hydrothermal method based on a water system has attracted more and more attention because of its outstanding advantages, such as high yield, simple manipulation, easy control, uniform products, lower air pollution, low energy consumption and so on. Precise control over the hydrothermal synthetic conditions is a key to the success of the preparation of high-quality inorganic semiconducting nanostructures. In this review, only the representative hydrothermal synthetic strategies of inorganic semiconducting nanostructures are selected and discussed. We will introduce the four types of strategies based on exterior reaction system adjustment, namely organic additive- and template-free hydrothermal synthesis, organic additive-assisted hydrothermal synthesis, template-assisted hydrothermal synthesis and substrate-assisted hydrothermal synthesis. In addition, the two strategies based on exterior reaction environment adjustment, including microwave-assisted and magnetic field-assisted hydrothermal synthesis, will be also described. Finally, we conclude and give the future prospects of this research area.

  14. NANOSTRUCTURE PATTERNING UNDER ENERGETIC PARTICLE BEAM IRRADIATION

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lumin [Regents of the University of Michigan; Lu, Wei [Regents of the University of Michigan

    2013-01-31

    Energetic ion bombardment can lead to the development of complex and diverse nanostructures on or beneath the material surface through induced self-organization processes. These self-organized structures have received particular interest recently as promising candidates as simple, inexpensive, and large area patterns, whose optical, electronic and magnetic properties are different from those in the bulk materials [1-5]. Compared to the low mass efficiency production rate of lithographic methods, these self-organized approaches display new routes for the fabrication of nanostructures over large areas in a short processing time at the nanoscale, beyond the limits of lithography [1,4]. Although it is believed that surface nanostructure formation is based on the morphological instability of the sputtered surface, driven by a kinetic balance between roughening and smoothing actions [6,7], the fundamental mechanisms and experimental conditions for the formation of these nanostructures has still not been well established, the formation of the 3-D naopatterns beneath the irradiated surface especially needs more exploration. During the last funding period, we have focused our efforts on irradiation-induced nanostructures in a broad range of materials. These structures have been studied primarily through in situ electron microscopy during electron or ion irradiation. In particular, we have performed studies on 3-D void/bubble lattices (in metals and CaF2), embedded sponge-like porous structure with uniform nanofibers in irradiated semiconductors (Ge, GaSb, and InSb), 2-D highly ordered pattern of nanodroplets (on the surface of GaAs), hexagonally ordered nanoholes (on the surface of Ge), and 1-D highly ordered ripple and periodic arrays (of Cu nanoparticles) [3,8-11]. The amazing common feature in those nanopatterns is the uniformity of the size of nanoelements (nanoripples, nanodots, nanovoids or nanofibers) and the distance separating them. Our research focuses on the

  15. One-dimensional photonic crystals

    NARCIS (Netherlands)

    Shen, Huaizhong; Wang, Zhanhua; Wu, Yuxin; Yang, Bai

    2016-01-01

    A one-dimensional photonic crystal (1DPC), which is a periodic nanostructure with a refractive index distribution along one direction, has been widely studied by scientists. In this review, materials and methods for 1DPC fabrication are summarized. Applications are listed, with a special emphasis

  16. Optical and X-ray photoelectron spectroscopy of PbGeO 3 and Pb 5 ...

    Indian Academy of Sciences (India)

    ... of some of the lattice Pb ions. On gamma irradiation the changes observed in O1 core level energies for both the crystals are seen to be consistent with the changes noted in the Pb47/2 and Ge3 spectra. Interestingly, the results reveal oxidation of surface Ge atoms with atmospheric oxygen under gamma irradiation.

  17. Optical and X-ray photoelectron spectroscopy of PbGeO3 and Pb5 ...

    Indian Academy of Sciences (India)

    Administrator

    phase (Iwasaki et al 1971). The compositions, PbGeO3. (LGO-1) and Pb5Ge3O11 (LGO-2), both exhibit ferroelec- tric properties. Consequently, efforts were made during seventies to grow LGO-2 single crystals of high quality and characterize them for growth related defects and photorefractive, electro-optic and pyroelectric ...

  18. Electrical transport and magnetic ordering in R2Ti3Ge4 (R = Dy, Ho ...

    Indian Academy of Sciences (India)

    Abstract. New R2Ti3Ge4 (R = Dy, Ho and Er) intermetallic compounds have been synthesized and characterized by X-ray diffraction and low temperature ac magnetic susceptibility, electrical re- sistivity and thermoelectric power measurements were carried out. The compounds crystallize in the parent, Sm5Ge4-type ...

  19. Disparities in correlating microstructural to nanostructural preservation of dinosaur femoral bones

    Science.gov (United States)

    Kim, Jung-Kyun; Kwon, Yong-Eun; Lee, Sang-Gil; Lee, Ji-Hyun; Kim, Jin-Gyu; Huh, Min; Lee, Eunji; Kim, Youn-Joong

    2017-03-01

    Osteohistological researches on dinosaurs are well documented, but descriptions of direct correlations between the bone microstructure and corresponding nanostructure are currently lacking. By applying correlative microscopy, we aimed to verify that well-preserved osteohistological features correlate with pristine fossil bone nanostructures from the femoral bones of Koreanosaurus boseongensis. The quality of nanostructural preservation was evaluated based on the preferred orientation level of apatite crystals obtained from selected area electron diffraction (SAED) patterns and by measuring the “arcs” from the {100} and {002} diffraction rings. Unlike our expectations, our results revealed that well-preserved microstructures do not guarantee pristine nanostructures and vice versa. Structural preservation of bone from macro- to nanoscale primarily depends on original bioapatite density, and subsequent taphonomical factors such as effects from burial, pressure, influx of external elements and the rate of diagenetic alteration of apatite crystals. Our findings suggest that the efficient application of SAED analysis opens the opportunity for comprehensive nanostructural investigations of bone.

  20. Single layer of Ge quantum dots in HfO2for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  1. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at .... orientation along c-axis. The intensities of all .... mobility (µ) at room temperature for GeS (I2) single crystals at different values of the magnetic field (H). Magnetic. Hall coefficient. Resistivity. Carrier. Mobility field (H). (RH).

  2. Thermal expansion of the superconducting ferromagnet UCoGe

    NARCIS (Netherlands)

    Gasparini, A.; Huang, Y.K.; Hartbaum, J.; v. Löhneysen, H.; de Visser, A.

    2010-01-01

    We report measurements of the coefficient of linear thermal expansion, α(T), of the superconducting ferromagnet UCoGe. The data taken on a single-crystalline sample along the orthorhombic crystal axes reveal a pronounced anisotropy with the largest length changes along the b axis. The large values

  3. Injection moulding antireflective nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Clausen, Jeppe Sandvik; Mortensen, N. Asger

    We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used in an inject......We present a method for injection moulding antireflective nanostructures on large areas, for high volume production. Nanostructured black silicon masters were fabricated by mask-less reactive ion etching, and electroplated with nickel. The nickel shim was antistiction coated and used...... in an injection moulding process, to fabricate the antireflective surfaces. The cycle-time was 35 s. The injection moulded structures had a height of 125 nm, and the visible spectrum reflectance of injection moulded black polypropylene surfaces was reduced from 4.5±0.5% to 2.5±0.5%. The gradient of the refractive...

  4. Self-assembled nanostructures

    CERN Document Server

    Zhang, Jin Z; Liu, Jun; Chen, Shaowei; Liu, Gang-yu

    2003-01-01

    Nanostructures refer to materials that have relevant dimensions on the nanometer length scales and reside in the mesoscopic regime between isolated atoms and molecules in bulk matter. These materials have unique physical properties that are distinctly different from bulk materials. Self-Assembled Nanostructures provides systematic coverage of basic nanomaterials science including materials assembly and synthesis, characterization, and application. Suitable for both beginners and experts, it balances the chemistry aspects of nanomaterials with physical principles. It also highlights nanomaterial-based architectures including assembled or self-assembled systems. Filled with in-depth discussion of important applications of nano-architectures as well as potential applications ranging from physical to chemical and biological systems, Self-Assembled Nanostructures is the essential reference or text for scientists involved with nanostructures.

  5. Nanostructured CNx (0

    NARCIS (Netherlands)

    Bongiorno, G; Blomqvist, M; Piseri, P; Milani, P; Lenardi, C; Ducati, C; Caruso, T; Rudolf, P; Wachtmeister, S; Csillag, S; Coronel, E

    Nanostructured CNx thin films were prepared by supersonic cluster beam deposition (SCBD) and systematically characterized by transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The

  6. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  7. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    International Nuclear Information System (INIS)

    Borisova, Svetlana

    2012-01-01

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  8. Modeling artificial graphene in Si/SiGe hetrostructures

    Science.gov (United States)

    Maurer, Leon; Gamble, John King; Moussa, Jonathan; Tracy, Lisa; Huang, Shih-Hsien; Chuang, Yen; Li, Jiun-Yun; Liu, Chih-Wen; Lu, Tzu-Ming

    Artificial graphene is a synthetic material made using a nanostructure with identical 2D potential wells arranged in a honeycomb lattice. Unlike normal graphene, the properties of artificial graphene can be controlled by changing the nanostructure geometry and adjusting applied voltages. We perform a theoretical study of artificial graphene formed from a 2D electron gas (2DEG) in Si/SiGe and Ge/SiGe heterostructures by a metal honeycomb gate and a global top gate. While many models of artificial graphene assume a simple form for the potential landscape in the 2DEG, we instead calculate the potential landscape for actual devices with a range of bias voltages and geometries. This allows us to find the resulting bandstructure and calculate transport parameters, which we compare directly to experimental results. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was funded by the Laboratory Directed Research and Development Program. The work at NTU was supported by the Ministry of Science and Technology (103-2622-E-002-031 and 103-2112-M- 002-002-MY3).

  9. Computational modeling of semiconductor nanostructures for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Veprek, Ratko G.

    2009-07-01

    This dissertation deals with parts of the theory and its numerical implementation of a novel simulator tdkp/AQUA, suitable for the unified simulation of nanostructures for optoelectronics of any dimensionality. Here, the calculation of realistic electronic band structure, including strain and polarization effects, and the optical properties of nanostructures are covered. The presented theory is based on a continuum formulation of the physical behavior of the involved semiconductor crystal. As a central novelty, the k*p envelope function method for the band structure calculation is formulated absolutely spurious solution free by ensuring a mathematical consistent formulation retaining the elliptical nature of the equation. The optical properties are calculated within a density matrix formalism. Many-body effects due to Coulomb interactions between charge carriers are included on the level of the screened Hartree-Fock theory. At the end, an analysis of GaN-nanocolumn LEDs using the developed simulator is presented. (orig.)

  10. Formation of different gold nanostructures by silk nanofibrils

    International Nuclear Information System (INIS)

    Fang, Guangqiang; Yang, Yuhong; Yao, Jinrong; Shao, Zhengzhong; Chen, Xin

    2016-01-01

    Metal nanostructures that have unique size- and shape-dependent electronic, optical and chemical properties gain more and more attention in modern science and technology. In this article, we show the possibility that we are able to obtain different gold nanostructures simply with the help of silk nanofibrils. We demonstrate that only by varying the pH of the reaction solution, we get gold nanoparticles, nano-icosahedrons, nanocubes, and even microplates. Particularly, we develop a practical method for the preparation of gold microplates in acid condition in the presence of silk nanofibrils, which is impossible by using other forms of silk protein. We attribute the role of silk nanofibrils in the formation of gold nanostructure to their reduction ability from several specific amino acid residues, and the suitable structural anisotropic features to sustain the crystal growth after the reduction process. Although the main purpose of this article is to demonstrate that silk nanofibrils are able to mediate the formation of different gold nanostructure, we show the potential applications of these resulting gold nanostructures, such as surface-enhanced Raman scattering (SERS) and photothermal transformation effect, as same as those produced by other methods. In conclusion, we present in this communication a facile and green synthesis route to prepare various gold nanostructures with silk nanofibrils by simply varying pH in the reaction system, which has remarkable advantages in future biomedical applications. - Highlights: • Different Au nanostructures can be obtained by a facile and green protein reduction method. • Silk nanofibrils serve as both reductant and template in the formation of Au nanostructures. • Different Au nanostructures can be obtained simply by regulating the pH in the medium. • Large Au microplates can be obtained with a cheap, abundant, sustainable silk protein. • Silk/Au hybrid nanocomposites show potential application in SERS and

  11. Formation of different gold nanostructures by silk nanofibrils

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Guangqiang [State Key Laboratory of Molecular Engineering of Polymers, Collaborative Innovation Center of Polymers and Polymer Composite Materials, Department of Macromolecular Science, Laboratory of Advanced Materials, Fudan University, Shanghai, 200433 (China); Yang, Yuhong [Research Centre for Analysis and Measurement, Fudan University, Shanghai 200433 (China); Yao, Jinrong; Shao, Zhengzhong [State Key Laboratory of Molecular Engineering of Polymers, Collaborative Innovation Center of Polymers and Polymer Composite Materials, Department of Macromolecular Science, Laboratory of Advanced Materials, Fudan University, Shanghai, 200433 (China); Chen, Xin, E-mail: chenx@fudan.edu.cn [State Key Laboratory of Molecular Engineering of Polymers, Collaborative Innovation Center of Polymers and Polymer Composite Materials, Department of Macromolecular Science, Laboratory of Advanced Materials, Fudan University, Shanghai, 200433 (China)

    2016-07-01

    Metal nanostructures that have unique size- and shape-dependent electronic, optical and chemical properties gain more and more attention in modern science and technology. In this article, we show the possibility that we are able to obtain different gold nanostructures simply with the help of silk nanofibrils. We demonstrate that only by varying the pH of the reaction solution, we get gold nanoparticles, nano-icosahedrons, nanocubes, and even microplates. Particularly, we develop a practical method for the preparation of gold microplates in acid condition in the presence of silk nanofibrils, which is impossible by using other forms of silk protein. We attribute the role of silk nanofibrils in the formation of gold nanostructure to their reduction ability from several specific amino acid residues, and the suitable structural anisotropic features to sustain the crystal growth after the reduction process. Although the main purpose of this article is to demonstrate that silk nanofibrils are able to mediate the formation of different gold nanostructure, we show the potential applications of these resulting gold nanostructures, such as surface-enhanced Raman scattering (SERS) and photothermal transformation effect, as same as those produced by other methods. In conclusion, we present in this communication a facile and green synthesis route to prepare various gold nanostructures with silk nanofibrils by simply varying pH in the reaction system, which has remarkable advantages in future biomedical applications. - Highlights: • Different Au nanostructures can be obtained by a facile and green protein reduction method. • Silk nanofibrils serve as both reductant and template in the formation of Au nanostructures. • Different Au nanostructures can be obtained simply by regulating the pH in the medium. • Large Au microplates can be obtained with a cheap, abundant, sustainable silk protein. • Silk/Au hybrid nanocomposites show potential application in SERS and

  12. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  13. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  14. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

    Science.gov (United States)

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Hong, Augustin J; Chen, Shengyu; Wang, Minsheng; Zeng, Caifu; Yang, Hong-Jie; Tuan, Hsing-Yu; Tsai, Cho-Jen; Chen, Lih Juann; Wang, Kang L

    2010-12-17

    In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.

  15. Light-matter interaction in nanostructured materials

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst

    Light-matter interaction in nanostructured materials is studied theoretically with emphasis on spontaneous emission dynamics of quantum dots in photonic crystals. The main topics of the work are electromagnetic scattering calculations, decay dynamics of single quantum dots and multiple quantum do...... crystallite slab and apply the method for an example calculation with two quantum dots at specific locations in the unit cell. In this way it is explicitly shown how the decay dynamics of one quantum dot is qualitatively changed by the scattering properties of another.......Light-matter interaction in nanostructured materials is studied theoretically with emphasis on spontaneous emission dynamics of quantum dots in photonic crystals. The main topics of the work are electromagnetic scattering calculations, decay dynamics of single quantum dots and multiple quantum dot...... dynamics. The electromagnetic Green's tensor enters naturally in calculations of light-matter interaction in multiple scattering media such as photonic crystals. We present a novel solution method to the Lippmann-Schwinger equation for use in electric field scattering calculations and Green's tensor...

  16. Mechanical properties of nanostructure of biological materials

    Science.gov (United States)

    Ji, Baohua; Gao, Huajian

    2004-09-01

    Natural biological materials such as bone, teeth and nacre are nanocomposites of protein and mineral with superior strength. It is quite a marvel that nature produces hard and tough materials out of protein as soft as human skin and mineral as brittle as classroom chalk. What are the secrets of nature? Can we learn from this to produce bio-inspired materials in the laboratory? These questions have motivated us to investigate the mechanics of protein-mineral nanocomposite structure. Large aspect ratios and a staggered alignment of mineral platelets are found to be the key factors contributing to the large stiffness of biomaterials. A tension-shear chain (TSC) model of biological nanostructure reveals that the strength of biomaterials hinges upon optimizing the tensile strength of the mineral crystals. As the size of the mineral crystals is reduced to nanoscale, they become insensitive to flaws with strength approaching the theoretical strength of atomic bonds. The optimized tensile strength of mineral crystals thus allows a large amount of fracture energy to be dissipated in protein via shear deformation and consequently enhances the fracture toughness of biocomposites. We derive viscoelastic properties of the protein-mineral nanostructure and show that the toughness of biocomposite can be further enhanced by the viscoelastic properties of protein.

  17. Structure cristalline du composé intermétallique Ni18Ge12

    Directory of Open Access Journals (Sweden)

    Mohammed Kars

    2015-03-01

    Full Text Available Single crystals of octadecanickel dodecagermanide were grown by chemical transport reaction. The intermetallic compound crystallizes in a superstructure of the hexagonal NiAs type (B8 type. All atoms in the asymmetric unit lie on special positions except one Ni atom (two Ni atoms have site symmetry -6.. and another one has site symmetry .2. while the Ge atoms have site symmetries 32., m.. and 3... In the structure, the Ni atoms are arranged in 11- or 13-vertex polyhedra (CN = 11–13. The coordination polyhedra of the Ge atoms are bicapped square antiprisms (CN = 10 or 11-vertex polyhedra (CN = 11. The structure exhibits strong Ge...Ni interactions, but no close Ge...Ge contacts are observed. The Ni atoms with CN = 13 form infinite chains along [001] with an Ni—Ni distance of 2.491 (2 Å.

  18. NANOSTRUCTURAL PROCESSES OF MELTING AND MOULDING OF HYPOEUTECTIC SILUMIN

    Directory of Open Access Journals (Sweden)

    V. Yu. Stetsenko

    2016-01-01

    Full Text Available It is shown that melting and molding of hypoeutectic silumin are difficult physical and chemical nanostructural processes. In them the major role is played by the centers of crystallization of primary dendrites of aluminum, aluminum nanocrystals, the dissolved and adsorbed hydrogen. The role of the modifying crystals of an intermetallid of TiAl3 is reduced to absorption of the dissolved hydrogen and an intensification of process of a koalestsention of nanocrystals of aluminum in the centers of crystallization of primary dendrites of aluminum.

  19. Multiple band structures in 70Ge

    Science.gov (United States)

    Haring-Kaye, R. A.; Morrow, S. I.; Döring, J.; Tabor, S. L.; Le, K. Q.; Allegro, P. R. P.; Bender, P. C.; Elder, R. M.; Medina, N. H.; Oliveira, J. R. B.; Tripathi, Vandana

    2018-02-01

    High-spin states in 70Ge were studied using the 55Mn(18O,p 2 n ) fusion-evaporation reaction at a beam energy of 50 MeV. Prompt γ -γ coincidences were measured using the Florida State University Compton-suppressed Ge array consisting of three Clover detectors and seven single-crystal detectors. An investigation of these coincidences resulted in the addition of 31 new transitions and the rearrangement of four others in the 70Ge level scheme, providing a more complete picture of the high-spin decay pattern involving both positive- and negative-parity states with multiple band structures. Spins were assigned based on directional correlation of oriented nuclei ratios, which many times also led to unambiguous parity determinations based on the firm assignments for low-lying states made in previous work. Total Routhian surface calculations, along with the observed trends in the experimental kinematic moment of inertia with rotational frequency, support the multiquasiparticle configurations of the various crossing bands proposed in recent studies. The high-spin excitation spectra predicted by previous shell-model calculations compare favorably with the experimental one determined from this study.

  20. Selective Functionalization of Tailored Nanostructures

    NARCIS (Netherlands)

    Slingenbergh, Winand; Boer, Sanne K. de; Cordes, Thorben; Browne, Wesley R.; Feringa, Ben L.; Hoogenboom, Jacob P.; Hosson, Jeff Th.M. De; Dorp, Willem F. van

    2012-01-01

    The controlled positioning of nanostructures with active molecular components is of importance throughout nanoscience and nanotechnology. We present a novel three-step method to produce nanostructures that are selectively decorated with functional molecules. We use fluorophores and nanoparticles to

  1. Nanostructured materials in potentiometry.

    Science.gov (United States)

    Düzgün, Ali; Zelada-Guillén, Gustavo A; Crespo, Gastón A; Macho, Santiago; Riu, Jordi; Rius, F Xavier

    2011-01-01

    Potentiometry is a very simple electrochemical technique with extraordinary analytical capabilities. It is also well known that nanostructured materials display properties which they do not show in the bulk phase. The combination of the two fields of potentiometry and nanomaterials is therefore a promising area of research and development. In this report, we explain the fundamentals of potentiometric devices that incorporate nanostructured materials and we highlight the advantages and drawbacks of combining nanomaterials and potentiometry. The paper provides an overview of the role of nanostructured materials in the two commonest potentiometric sensors: field-effect transistors and ion-selective electrodes. Additionally, we provide a few recent examples of new potentiometric sensors that are based on receptors immobilized directly onto the nanostructured material surface. Moreover, we summarize the use of potentiometry to analyze processes involving nanostructured materials and the prospects that the use of nanopores offer to potentiometry. Finally, we discuss several difficulties that currently hinder developments in the field and some future trends that will extend potentiometry into new analytical areas such as biology and medicine.

  2. Effects of hydroxyapatite nanostructure on channel surface of porcine acellular dermal matrix scaffold on cell viability and osteogenic differentiation of human periodontal ligament stem cells

    Directory of Open Access Journals (Sweden)

    Ge S

    2013-05-01

    Full Text Available Shaohua Ge,1 Ning Zhao,1 Lu Wang,1 Hong Liu,2 Pishan Yang11Shandong Provincial Key Laboratory of Oral Biomedicine, Department of Periodontology, Shandong University; 2State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, Jinan, People's Republic of ChinaAbstract: A new nanostructured hydroxyapatite-coated porcine acellular dermal matrix (HAp-PADM was fabricated by a biomimetic mineralization method. Human periodontal ligament stem cells were seeded on HAp-PADM and the effects of this scaffold on cell shape, cytoskeleton organization, cell viability, and osteogenic differentiation were examined. Periodontal ligament stem cells cultured on HAp-PADM exhibited different cell shape when compared with those on pure PADM. Moreover, HAp-PADM promoted cell viability and alkaline phosphatase activity significantly. Based on quantitative real-time polymerase chain reaction, the expression of bone-related markers runt-related transcription factor 2 (Runx2, osteopontin (OPN, and osteocalcin (OCN upregulated in the HAp-PADM scaffold. The enhancement of osteogenic differentiation of periodontal ligament stem cells on the HAp-PADM scaffold was proposed based on the research results. The results of this study highlight the micro-nano, two-level, three-dimensional HAp-PADM composite as a promising scaffold for periodontal tissue engineering.Keywords: hydroxyapatite, scaffold, nanostructure, proliferation, differentiation, tissue engineering

  3. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  4. Micromachining with Nanostructured Cutting Tools

    CERN Document Server

    Jackson, Mark J

    2013-01-01

    The purpose of the brief is to explain how nanostructured tools can be used to machine materials at the microscale.  The aims of the brief are to explain to readers how to apply nanostructured tools to micromachining applications. This book describes the application of nanostructured tools to machining engineering materials and includes methods for calculating basic features of micromachining. It explains the nature of contact between tools and work pieces to build a solid understanding of how nanostructured tools are made.

  5. The role of atomic vacancies on phonon confinement in α-GeTe

    Directory of Open Access Journals (Sweden)

    Geetanjali Kalra

    2015-04-01

    Full Text Available Atomic defects and their dynamics play a vital role in controlling the behavior of non-volatile phase change memory materials used in advanced optical storage devices. Synthesis and structural analysis by XRD and Raman spectroscopy on α-GeTe single crystal with different sizes are reported. The spectroscopic measurements on micron and nano sized α-GeTe single crystal reveal the evolution of phonon confinement with crystal sizes of few hundred nanometers. The characteristic vibrational modes of bulk α-GeTe structure are found to downshift and asymmetrically broaden to lower frequency with decreasing the single crystal size. We attribute the observed downshift of Raman lines in α-GeTe is largely due to the presence of high concentration of atomic vacancies. The crystal size and temperature dependent Raman spectra provide explicitly the dynamics of vacancies on optical phonon confinement in α-GeTe structure. Thus, the observed large concentration of vacancies and their size dependency might influence the phase change phenomenon in GeTe based alloys.

  6. Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2015-05-05

    Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

  7. Classical and nonclassical germanium environments in high-pressure BaGe5.

    Science.gov (United States)

    Castillo, Rodrigo; Carrillo-Cabrera, Wilder; Schwarz, Ulrich; Grin, Yuri

    2015-02-02

    A new crystalline form of BaGe(5) was obtained at a pressure of 15(2) GPa in the temperature range from 1000(100) to 1200(120) K. Single-crystal electron and powder X-ray diffraction patterns indicate a body-centered orthorhombic structure (space group Imma, Pearson notation oI24) with unit cell parameters a = 8.3421(8) Å, b = 4.8728(5) Å, and c = 13.7202(9) Å. The crystal structure of hp-BaGe(5) consists of four-bonded Ge atoms forming complex layers with Ge-Ge contacts between 2.560(6) and 2.684(3) Å; the Ba atoms are coordinated by 15 Ge neighbors in the range from 3.341(6) to 3.739(4) Å. Analysis of the chemical bonding using quantum chemical techniques in real space reveal charge transfer from the Ba cations to the anionic Ge species. Ge atoms having nearly tetrahedral environments show an electron-localizability-based oxidation number close to 0; the four-bonded Ge atoms with a Ψ-pyramidal environment adopt a value close to 1-. In agreement with the calculated electronic density of states, the compound is a metallic conductor (electrical resistivity of ca. 240 μΩ cm at 300 K), and magnetic susceptibility measurements evidence diamagnetic behavior with χ(0) = -95 × 10(-6) emu mol(-1).

  8. Nanostructured electronic and magnetic materials

    Indian Academy of Sciences (India)

    Research and development in nanostructured materials is one of the most intensely studied areas in science. As a result of concerted R & D efforts, nanostructured electronic and magnetic materials have achieved commercial success. Specific examples of novel industrially important nanostructured electronic and magnetic ...

  9. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  10. Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

    Energy Technology Data Exchange (ETDEWEB)

    Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Chiral Inorganic Nanostructures.

    Science.gov (United States)

    Ma, Wei; Xu, Liguang; de Moura, André F; Wu, Xiaoling; Kuang, Hua; Xu, Chuanlai; Kotov, Nicholas A

    2017-06-28

    The field of chiral inorganic nanostructures is rapidly expanding. It started from the observation of strong circular dichroism during the synthesis of individual nanoparticles (NPs) and their assemblies and expanded to sophisticated synthetic protocols involving nanostructures from metals, semiconductors, ceramics, and nanocarbons. Besides the well-established chirality transfer from bioorganic molecules, other methods to impart handedness to nanoscale matter specific to inorganic materials were discovered, including three-dimentional lithography, multiphoton chirality transfer, polarization effects in nanoscale assemblies, and others. Multiple chiral geometries were observed with characteristic scales from ångströms to microns. Uniquely high values of chiral anisotropy factors that spurred the development of the field and differentiate it from chiral structures studied before, are now well understood; they originate from strong resonances of incident electromagnetic waves with plasmonic and excitonic states typical for metals and semiconductors. At the same time, distinct similarities with chiral supramolecular and biological systems also emerged. They can be seen in the synthesis and separation methods, chemical properties of individual NPs, geometries of the nanoparticle assemblies, and interactions with biological membranes. Their analysis can help us understand in greater depth the role of chiral asymmetry in nature inclusive of both earth and space. Consideration of both differences and similarities between chiral inorganic, organic, and biological nanostructures will also accelerate the development of technologies based on chiroplasmonic and chiroexcitonic effects. This review will cover both experiment and theory of chiral nanostructures starting with the origin and multiple components of mirror asymmetry of individual NPs and their assemblies. We shall consider four different types of chirality in nanostructures and related physical, chemical, and

  12. Spin-configurations in thermoelectric MnCoGe materials

    Science.gov (United States)

    Hahn, Konstanze; Portavoce, Alain; Bertaina, Sylvain; Charai, Ahmed

    In the last decades, research for improved thermoelectric materials focused on the introduction of nanostructures. However, only modest enhancement of the thermoelectric efficiency could be achieved. For improved thermoelectric performance another approach is required. In this respect, temperature driven spin transport in magnetic materials offers great potential. The ternary Mn-Co-Ge, for example, shows interesting magnetocaloric and thermoelectric properties. Magnetic properties of ferromagnetic CoxMnyGe1-x-y thin films, for example, have been shown experimentally to vary with composition x and y, suggesting a possible tuning of the CoxMnyGe1-x-y properties to meet application's requirements. In this study, structural and magnetic transitions in MnGe-based materials with varying composition have been investigated using ab initio calculations. In particular, the effect of chemical composition on the stability of the hexagonal Ni2In-type and the orthorhombic TiNiSi-type structure has been examined focusing on their magnetic configurations. It has been found that compressive strain promotes the formation of the Ni2In-type structure which can be advantageous for the magnetostructural transition in thermomagnetic devices. The spin-Seebeck coefficient has been estimated for several magnetic configurations of such materials based on the Boltzmann transport. This work is financed by the A*MIDEX foundation.

  13. Nanostructured piezoelectric energy harvesters

    CERN Document Server

    Briscoe, Joe

    2014-01-01

    This book covers a range of devices that use piezoelectricity to convert mechanical deformation into electrical energy and relates their output capabilities to a range of potential applications. Starting with a description of the fundamental principles and properties of piezo- and ferroelectric materials, where applications of bulk materials are well established, the book shows how nanostructures of these materials are being developed for energy harvesting applications. The authors show how a nanostructured device can be produced, and put in context some of the approaches that are being invest

  14. Anomalous temperature-induced volume contraction in GeTe

    Science.gov (United States)

    Chatterji, Tapan; Kumar, C. M. N.; Wdowik, Urszula D.

    2015-02-01

    The recent surge of interest in phase-change materials GeTe, Ge2Sb2Te5 , and related compounds motivated us to revisit the structural phase transition in GeTe in more detail than was done before. The rhombohedral-to-cubic ferroelectric phase transition in GeTe has been studied using high-resolution neutron powder diffraction on a spallation neutron source. We determined the temperature dependence of the structural parameters in a wide temperature range extending from 309 to 973 K. The results of our studies clearly show an anomalous volume contraction of 0.6% at the phase transition from the rhombohedral-to-cubic phase. In order to better understand the phase transition and the associated anomalous volume decrease in GeTe, we have performed phonon calculations based on the density functional theory. Results of the present investigations are also discussed with respect to the experimental data obtained for single crystals of GeTe.

  15. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    Energy Technology Data Exchange (ETDEWEB)

    Krasilnik, Z. F.; Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kachemtsev, A. N. [Sedakov Scientific-Research Institute (Russian Federation); Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Shengurov, D. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15

    The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

  16. Influences of composition on Raman scattering from GeSi alloy core-shell nanowire heterostructures

    Science.gov (United States)

    Han, Delong; Ye, Han; Yu, Zhongyuan; Zhang, Yunzhen; Liu, Yumin; Li, Yinfeng

    2017-10-01

    In this paper, the influences of composition on Raman scattering from Ge/Si-GeSi core-shell nanowire heterostructures standing along [011] and [111] crystal directions are numerically investigated. Uniform, linear and spontaneous nonlinear composition profiles (CPs) in GeSi alloy shell are taken into consideration. In uniform CP case, clear double peaks in Raman spectra contributed by core and shell are observed. The strain-induced shift follows linear relation with Ge concentration and nonlinear relation with shell thickness. Larger strain-induced shifts are obtained in nanowires along [111] direction. In linear CP case, the peaks contributed by shell cannot be distinguished in the total spectra and plateaus are formed on the low frequency side. Moreover, the nonlinear CP accounts for the spontaneous composition transition near heterointerface during lateral epitaxy of GeSi shell. Due to the rapid Ge concentration transition, Raman spectra are shown nearly identical to uniform CP cases.

  17. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    International Nuclear Information System (INIS)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-01-01

    The stability of the crystalline phase of binary phase-change Ge x Sb 1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change dT cryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T cryst is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  18. Designing Nanostructures for Phonon Transport via Bayesian Optimization

    Directory of Open Access Journals (Sweden)

    Shenghong Ju

    2017-05-01

    Full Text Available We demonstrate optimization of thermal conductance across nanostructures by developing a method combining atomistic Green’s function and Bayesian optimization. With an aim to minimize and maximize the interfacial thermal conductance (ITC across Si-Si and Si-Ge interfaces by means of the Si/Ge composite interfacial structure, the method identifies the optimal structures from calculations of only a few percent of the entire candidates (over 60 000 structures. The obtained optimal interfacial structures are nonintuitive and impacting: the minimum ITC structure is an aperiodic superlattice that realizes 50% reduction from the best periodic superlattice. The physical mechanism of the minimum ITC can be understood in terms of the crossover of the two effects on phonon transport: as the layer thickness in the superlattice increases, the impact of Fabry-Pérot interference increases, and the rate of reflection at the layer interfaces decreases. An aperiodic superlattice with spatial variation in the layer thickness has a degree of freedom to realize optimal balance between the above two competing mechanisms. Furthermore, the spatial variation enables weakening the impact of constructive phonon interference relative to that of destructive interference. The present work shows the effectiveness and advantage of material informatics in designing nanostructures to control heat conduction, which can be extended to other nanostructures and properties.

  19. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  20. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  1. Nanostructured Electrospun Hybrid Graphene/Polyacrylonitrile Yarns

    Science.gov (United States)

    Razal, Joselito M.; Naebe, Minoo

    2017-01-01

    Novel nanostructured hybrid electrospun polyacrylonitrile (PAN) yarns with different graphene ratios were prepared using liquid crystal graphene oxide (LCGO) and PAN. It was found that the well-dispersed LCGO were oriented along the fiber axis in an electrified thin liquid jet during electrospinning. The graphene oxide sheets were well dispersed in the polar organic solvent, forming nematic liquid crystals upon increasing concentration. Twisted nanofibers were produced from aligned nanofibrous mats prepared by conventional electrospinning. It was found that the mechanical properties of the twisted nanofiber yarns increased even at very low LCGO loading. This research offers a new approach for the fabrication of continuous, strong, and uniform twisted nanofibers which could show promise in developing a novel carbon fiber precursor. PMID:28946668

  2. Nanostructured Electrospun Hybrid Graphene/Polyacrylonitrile Yarns.

    Science.gov (United States)

    Mehrpouya, Fahimeh; Foroughi, Javad; Naficy, Sina; Razal, Joselito M; Naebe, Minoo

    2017-09-25

    Novel nanostructured hybrid electrospun polyacrylonitrile (PAN) yarns with different graphene ratios were prepared using liquid crystal graphene oxide (LCGO) and PAN. It was found that the well-dispersed LCGO were oriented along the fiber axis in an electrified thin liquid jet during electrospinning. The graphene oxide sheets were well dispersed in the polar organic solvent, forming nematic liquid crystals upon increasing concentration. Twisted nanofibers were produced from aligned nanofibrous mats prepared by conventional electrospinning. It was found that the mechanical properties of the twisted nanofiber yarns increased even at very low LCGO loading. This research offers a new approach for the fabrication of continuous, strong, and uniform twisted nanofibers which could show promise in developing a novel carbon fiber precursor.

  3. Dispersion relations in heavily-doped nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2016-01-01

    This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also disc...

  4. Nanostructured catalyst supports

    Science.gov (United States)

    Zhu, Yimin; Goldman, Jay L.; Qian, Baixin; Stefan, Ionel C.

    2012-10-02

    The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.

  5. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures ...

  6. Nanostructures-History

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Nanostructures-History. Inspiration to Nanotechnology-. The Japanese scientist Norio Taniguchi of the Tokyo University of Science was used the term "nano-technology" in a 1974 conference, to describe semiconductor processes such as thin film His definition was, ...

  7. The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica

    Directory of Open Access Journals (Sweden)

    Nicotra Giuseppe

    2011-01-01

    Full Text Available Abstract The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum dots (QDs should have a larger absorption and a more efficient quantum confinement effect than Si ones, thus they are good candidate for third-generation solar cells. In this work, Ge QDs embedded in silica matrix have been synthesized through magnetron sputtering deposition and annealing up to 800°C. The thermal evolution of the QD size (2 to 10 nm has been followed by transmission electron microscopy and X-ray diffraction techniques, evidencing an Ostwald ripening mechanism with a concomitant amorphous-crystalline transition. The optical absorption of Ge nanoclusters has been measured by spectrophotometry analyses, evidencing an optical bandgap of 1.6 eV, unexpectedly independent of the QDs size or of the solid phase (amorphous or crystalline. A simple modeling, based on the Tauc law, shows that the photon absorption has a much larger extent in smaller Ge QDs, being related to the surface extent rather than to the volume. These data are presented and discussed also considering the outcomes for application of Ge nanostructures in photovoltaics. PACS: 81.07.Ta; 78.67.Hc; 68.65.-k

  8. Methanofullerene elongated nanostructure formation for enhanced organic solar cells

    International Nuclear Information System (INIS)

    Reyes-Reyes, M.; Lopez-Sandoval, R.; Arenas-Alatorre, J.; Garibay-Alonso, R.; Carroll, D.L.; Lastras-Martinez, A.

    2007-01-01

    Using transmission electron microscopy (TEM) and Z-contrast imaging we have demonstrated elongated nanostructure formation of fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) within an organic host through annealing. The annealing provides an enhanced mobility of the PCBM molecules and, with good initial dispersion, allows for the formation of exaggerated grain growth within the polymer host. We have assembled these nanostructures within the regioregular conjugated polymer poly(3-hexylthiophene) (P3HT). This PCBM elongated nanostructure formation maybe responsible for the very high efficiencies observed, at very low loadings of PCBM (1:0.6, polymer to PCBM), in annealed photovoltaics. Moreover, our high resolution TEM and electron energy loss spectroscopy studies clearly show that the PCBM crystals remain crystalline and are unaffected by the 200-keV electron beam

  9. Methanofullerene elongated nanostructure formation for enhanced organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reyes-Reyes, M. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)], E-mail: reyesm@cactus.iico.uaslp.mx; Lopez-Sandoval, R. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216. San Luis Potosi (Mexico); Arenas-Alatorre, J. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000, Mexico, D.F. (Mexico); Garibay-Alonso, R. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216. San Luis Potosi (Mexico); Carroll, D.L. [Center for Nanotechnology and Molecular Materials, Department of Physics. Wake Forest University, Winston-Salem NC 27109 (United States); Lastras-Martinez, A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-11-01

    Using transmission electron microscopy (TEM) and Z-contrast imaging we have demonstrated elongated nanostructure formation of fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) within an organic host through annealing. The annealing provides an enhanced mobility of the PCBM molecules and, with good initial dispersion, allows for the formation of exaggerated grain growth within the polymer host. We have assembled these nanostructures within the regioregular conjugated polymer poly(3-hexylthiophene) (P3HT). This PCBM elongated nanostructure formation maybe responsible for the very high efficiencies observed, at very low loadings of PCBM (1:0.6, polymer to PCBM), in annealed photovoltaics. Moreover, our high resolution TEM and electron energy loss spectroscopy studies clearly show that the PCBM crystals remain crystalline and are unaffected by the 200-keV electron beam.

  10. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    International Nuclear Information System (INIS)

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  11. Synthesis, structure and electronic structure of a new polymorph of CaGe2

    International Nuclear Information System (INIS)

    Tobash, Paul H.; Bobev, Svilen

    2007-01-01

    Reported are the flux synthesis, the crystal structure determination, the properties and the band structure calculations of a new polymorph of CaGe 2 , which crystallizes with the hexagonal space group P6 3 mc (no. 186) with cell parameters of a=3.9966(9) and c=10.211(4)A (Z=2; Pearson's code hP6). The structure can be viewed as puckered layers of three-bonded germanium atoms, ∼ 2 [Ge 2 ] 2- , which are stacked along the direction of the c-axis in an ABAB-fashion. The germanium polyanionic layers are separated by the Ca cations. As such, this structure is closely related to the structure of the other CaGe 2 polymorph, which crystallizes with the rhombohedral CaSi 2 type in the R3-bar m space group (No. 166), where the ∼ 2 [Ge 2 ] 2- layers are arranged in an AA'BB'CC'-fashion, and are also interspaced by Ca 2+ cations. LMTO calculations suggest that in spite of the formal closed-shell configuration for all atoms and the apparent adherence to the Zintl rules for electron counting, i.e., Ca 2+ [3b-Ge 1- ] 2 ), the phase will be a poor metal due to a small Ca-3d-Ge-4p band overlap. Magnetic susceptibility measurements as a function of the temperature indicate that the new CaGe 2 polymorph exhibits weak, temperature independent, Pauli-paramagnetism

  12. GeNF - Experimental report 2006

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2007-01-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  13. GeNF - Experimental report 2006

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. of Materials Research

    2007-07-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  14. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  15. Transport properties of the clathrate BaGe5

    Science.gov (United States)

    Candolfi, C.; Aydemir, U.; Ormeci, A.; Carrillo-Cabrera, W.; Burkhardt, U.; Baitinger, M.; Oeschler, N.; Steglich, F.; Grin, Yu.

    2011-08-01

    We report on the synthesis, crystallographic and transport properties of the Zintl phase BaGe5, which crystallizes in a new clathrate-type structure. This compound was synthesized by the decomposition of the type-I clathrate Ba8Ge43□3 subjected to annealing treatment at 623, 673 and 793 K. Electrical resistivity, thermopower and thermal conductivity measurements were performed in the temperature range 2 - 773 K and complemented by magnetization, specific heat and Hall experiments below room temperature. Additional information on the chemical bonding and electronic band structure in BaGe5 was obtained through the electron localizability indicator (ELI) and the total density of states, all calculated within the all-electron full-potential local orbital method (FLPO). In agreement with the chemical bonding and electronic band structure calculations, electrical resistivity and specific heat data show that BaGe5 is a semiconductor. The complex crystal structure of BaGe5 contributes to the low thermal conductivity which displays a conventional crystalline-like behavior. Further measurements were carried out on samples annealed at 623, 673 and 793 K for four up to 30 days to probe possible variations of the crystal structure and electronic properties as a function of the annealing temperature and time. Even though the annealing temperature does not alter the semiconducting nature of this material, differences in the absolute values of the transport properties were unveiled in samples annealed for short-time periods. These differences are significantly reduced in samples which underwent long-time annealing treatment even though the measured curves do not merge completely.

  16. On the Response of Nascent Soot Nanostructure and Oxidative Reactivity to Photoflash Exposure

    Directory of Open Access Journals (Sweden)

    Wei Wang

    2017-07-01

    Full Text Available Soot particles are a kind of major pollutant from fuel combustion. To enrich the understanding of soot, this work focuses on investigating detailed influences of instantaneous external irradiation (conventional photoflash exposure on nanostructure as well as oxidation reactivity of nascent soot particles. By detailed soot characterizations flash can reduce the mass of soot and soot nanostructure can be reconstructed substantially without burning. After flash, the degree of soot crystallization increases while the soot reactive rate decreases and the activation energy increases. In addition, nanostructure and oxidative reactivity of soot in air and Ar after flash are different due to their different thermal conductivities.

  17. Controlled synthesis and properties of ZnO nanostructures grown by metalorganic chemical vapor deposition: A review

    Science.gov (United States)

    Park, Won Il

    2008-12-01

    The unique and fascinating properties of one-dimensional (1D) Zn) nanostructures have triggered tremendous interest in exploring their possibilities for future electronic and photonic device applications. This paper provides current information on the progress of ZnO nanostructure grown by metalorganic chemical vapor deposition (MOCVD); it covers issues ranging from controlled synthesis of various ZnO nanostructures to their properties and potential applications. The unique features of MOCVD have been exploited to grow high-quality 1D ZnO nanostructures with tunable sizes, enabling the study of excitonic dynamics in low-dimensional nanostructures and size-dependent quantum confinement. A better understanding of the growth behaviors of ZnO nanostructures—particularly the anisotropic surface energy and adsorbate-surface interaction with regard to the crystal planes—allows control over the positions, morphologies, and surface polarities of the ZnO nanostructures as appropriate for device integration.

  18. Bottom-Up Synthesis and Sensor Applications of Biomimetic Nanostructures

    Directory of Open Access Journals (Sweden)

    Li Wang

    2016-01-01

    Full Text Available The combination of nanotechnology, biology, and bioengineering greatly improved the developments of nanomaterials with unique functions and properties. Biomolecules as the nanoscale building blocks play very important roles for the final formation of functional nanostructures. Many kinds of novel nanostructures have been created by using the bioinspired self-assembly and subsequent binding with various nanoparticles. In this review, we summarized the studies on the fabrications and sensor applications of biomimetic nanostructures. The strategies for creating different bottom-up nanostructures by using biomolecules like DNA, protein, peptide, and virus, as well as microorganisms like bacteria and plant leaf are introduced. In addition, the potential applications of the synthesized biomimetic nanostructures for colorimetry, fluorescence, surface plasmon resonance, surface-enhanced Raman scattering, electrical resistance, electrochemistry, and quartz crystal microbalance sensors are presented. This review will promote the understanding of relationships between biomolecules/microorganisms and functional nanomaterials in one way, and in another way it will guide the design and synthesis of biomimetic nanomaterials with unique properties in the future.

  19. Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pruna, R., E-mail: rpruna@el.ub.edu; Palacio, F.; López, M. [SIC, Departament d' Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain); Pérez, J. [Nanobioengineering Group, Institute for Bioengineering of Catalonia (IBEC), Baldiri Reixac 15-21, E-08028 Barcelona (Spain); Mir, M. [Nanobioengineering Group, Institute for Bioengineering of Catalonia (IBEC), Baldiri Reixac 15-21, E-08028 Barcelona (Spain); Centro de Investigación Biomédica en Red en Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Monforte de Lemos 3-5 Pabellón 11, E-28029 Madrid (Spain); Blázquez, O.; Hernández, S.; Garrido, B. [MIND-IN" 2UB, Departament d' Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain)

    2016-08-08

    The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis of redox active molecules. ITO films were fabricated by using electron beam evaporation at different substrate temperatures and subsequently annealed for promoting their crystallization. The morphology of the deposited material was monitored by scanning electron microscopy, confirming the deposition of either thin films or nanowires, depending on the substrate temperature. Electrochemical surface characterization revealed a 45 % increase in the electroactive surface area of nanostructured ITO with respect to thin films, one third lower than the geometrical surface area variation determined by atomic force microscopy. ITO surfaces were functionalized with a model organic molecule known as 6-(ferrocenyl)hexanethiol. The chemical attachment was done by means of a glycidoxy compound containing a reactive epoxy group, the so-called 3-glycidoxypropyltrimethoxy-silane. ITO functionalization was useful for determining the benefits of nanostructuration on the surface coverage of active molecules. Compared to ITO thin films, an increase in the total peak height of 140 % was observed for as-deposited nanostructured electrodes, whereas the same measurement for annealed electrodes resulted in an increase of more than 400 %. These preliminary results demonstrate the ability of nanostructured ITO to increase the surface-to-volume ratio, conductivity and surface area functionalization, features that highly benefit the performance of biosensors.

  20. Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

    International Nuclear Information System (INIS)

    Pruna, R.; Palacio, F.; López, M.; Pérez, J.; Mir, M.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Blázquez, O.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Hernández, S.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Garrido, B.

    2016-01-01

    The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis of redox active molecules. ITO films were fabricated by using electron beam evaporation at different substrate temperatures and subsequently annealed for promoting their crystallization. The morphology of the deposited material was monitored by scanning electron microscopy, confirming the deposition of either thin films or nanowires, depending on the substrate temperature. Electrochemical surface characterization revealed a 45 % increase in the electroactive surface area of nanostructured ITO with respect to thin films, one third lower than the geometrical surface area variation determined by atomic force microscopy. ITO surfaces were functionalized with a model organic molecule known as 6-(ferrocenyl)hexanethiol. The chemical attachment was done by means of a glycidoxy compound containing a reactive epoxy group, the so-called 3-glycidoxypropyltrimethoxy-silane. ITO functionalization was useful for determining the benefits of nanostructuration on the surface coverage of active molecules. Compared to ITO thin films, an increase in the total peak height of 140 % was observed for as-deposited nanostructured electrodes, whereas the same measurement for annealed electrodes resulted in an increase of more than 400 %. These preliminary results demonstrate the ability of nanostructured ITO to increase the surface-to-volume ratio, conductivity and surface area functionalization, features that highly benefit the performance of biosensors.

  1. Enhanced sputtering of Ge nanowires under synergetic effect of Mn ion and electron beams

    Directory of Open Access Journals (Sweden)

    L. Vincent

    Full Text Available To monitor the damage evolution in Ge nanowires during Mn implantation, in situ transmission electron microscopy observations were carried-out as a function of the Mn fluence. Special interest lies in the sputtering of nanowires. We evidence an enhanced sputtering under the synergetic effects of Mn implantation and electron beam which may alert experimenters to some possible artefacts related to in situ observations in the case of nanostructures.

  2. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  3. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  4. Ductility of Nanostructured Bainite

    Directory of Open Access Journals (Sweden)

    Lucia Morales-Rivas

    2016-12-01

    Full Text Available Nanostructured bainite is a novel ultra-high-strength steel-concept under intensive current research, in which the optimization of its mechanical properties can only come from a clear understanding of the parameters that control its ductility. This work reviews first the nature of this composite-like material as a product of heat treatment conditions. Subsequently, the premises of ductility behavior are presented, taking as a reference related microstructures: conventional bainitic steels, and TRIP-aided steels. The ductility of nanostructured bainite is then discussed in terms of work-hardening and fracture mechanisms, leading to an analysis of the three-fold correlation between ductility, mechanically-induced martensitic transformation, and mechanical partitioning between the phases. Results suggest that a highly stable/hard retained austenite, with mechanical properties close to the matrix of bainitic ferrite, is advantageous in order to enhance ductility.

  5. Vortices and nanostructured superconductors

    CERN Document Server

    2017-01-01

    This book provides expert coverage of modern and novel aspects of the study of vortex matter, dynamics, and pinning in nanostructured and multi-component superconductors. Vortex matter in superconducting materials is a field of enormous beauty and intellectual challenge, which began with the theoretical prediction of vortices by A. Abrikosov (Nobel Laureate). Vortices, vortex dynamics, and pinning are key features in many of today’s human endeavors: from the huge superconducting accelerating magnets and detectors at the Large Hadron Collider at CERN, which opened new windows of knowledge on the universe, to the tiny superconducting transceivers using Rapid Single Flux Quanta, which have opened a revolutionary means of communication. In recent years, two new features have added to the intrinsic beauty and complexity of the subject: nanostructured/nanoengineered superconductors, and the discovery of a range of new materials showing multi-component (multi-gap) superconductivity. In this book, leading researche...

  6. Nanostructured sulfur cathodes

    KAUST Repository

    Yang, Yuan

    2013-01-01

    Rechargeable Li/S batteries have attracted significant attention lately due to their high specific energy and low cost. They are promising candidates for applications, including portable electronics, electric vehicles and grid-level energy storage. However, poor cycle life and low power capability are major technical obstacles. Various nanostructured sulfur cathodes have been developed to address these issues, as they provide greater resistance to pulverization, faster reaction kinetics and better trapping of soluble polysulfides. In this review, recent developments on nanostructured sulfur cathodes and mechanisms behind their operation are presented and discussed. Moreover, progress on novel characterization of sulfur cathodes is also summarized, as it has deepened the understanding of sulfur cathodes and will guide further rational design of sulfur electrodes. © 2013 The Royal Society of Chemistry.

  7. Hybrid phonons in nanostructures

    CERN Document Server

    Ridley, Brian K

    2017-01-01

    Crystalline semiconductor nanostructures have special properties associated with electrons and lattice vibrations and their interaction, and this is the topic of the book. The result of spatial confinement of electrons is indicated in the nomenclature of nonostructures: quantum wells, quantum wires, and quantum dots. Confinement also has a profound effect on lattice vibrations and an account of this is the prime focus. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh’s work in the late nineteenth century, but no such documentation exists for optical modes. Indeed, it is only comparatively recently that any theory of the elastic properties of optical modes exists, and the account given in the book is comprehensive. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces ...

  8. Dewetting induced Au-Ge composite nanodot evolution in SiO2

    Science.gov (United States)

    Datta, D. P.; Chettah, A.; Siva, V.; Kanjilal, D.; Sahoo, P. K.

    2018-01-01

    A composite nanostructure comprising of Au and Ge gradually evolves on SiO2 surface when a bilayer of Au and Ge is irradiated by medium keV Xe-ion beam. The morphology progresses through different stages from nucleating patches to extended islands and finally a Au-Ge composite nanodot array develops on the insulator surface. While ion energy and fluence are found to determine dimensions of the nanostructures, existence of a characteristic lateral length scale is also detected at every stage of evolution. Through morphological and compositional analysis, the observed evolution is understood as an effect of ion beam induced dewetting of Au top layer. Numerical estimation based on the unified thermal spike model using the present experimental condition demonstrates formation of molten zones around the ion track due to nuclear and electronic energy deposition in the target. Dewetting results from mass flow onto the surface driven by local melting along the ion track and combines with sputter erosion of the bilayer film to lead to composite nanodot evolution. The generality of the ion induced processes provides possible route towards metal-semiconductor hybrid nanostructure synthesis on insulator surface.

  9. Plasmonic Nanostructured Cellular Automata

    Science.gov (United States)

    Alkhazraji, Emad; Ghalib, A.; Manzoor, K.; Alsunaidi, M. A.

    2017-03-01

    In this work, we have investigated the scattering plasmonic resonance characteristics of silver nanospheres with a geometrical distribution that is modelled by Cellular Automata using time-domain numerical analysis. Cellular Automata are discrete mathematical structures that model different natural phenomena. Two binary one-dimensional Cellular Automata rules are considered to model the nanostructure, namely rule 30 and rule 33. The analysis produces three-dimensional scattering profiles of the entire plasmonic nanostructure. For the Cellular Automaton rule 33, the introduction of more Cellular Automata generations resulted only in slight red and blue shifts in the plasmonic modes with respect to the first generation. On the other hand, while rule 30 introduced significant red shifts in the resonance peaks at early generations, at later generations however, a peculiar effect is witnessed in the scattering profile as new peaks emerge as a feature of the overall Cellular Automata structure rather than the sum of the smaller parts that compose it. We strongly believe that these features that emerge as a result adopting the different 256 Cellular Automata rules as configuration models of nanostructures in different applications and systems might possess a great potential in enhancing their capability, sensitivity, efficiency, and power utilization.

  10. Strong uniaxial magnetic anisotropy in Co films on highly ordered grating-like nanopatterned Ge surfaces

    Science.gov (United States)

    Alam Mollick, Safiul; Singh, Ranveer; Kumar, Mohit; Bhattacharyya, Satyaranjan; Som, Tapobrata

    2018-03-01

    We present a systematic investigation on uniaxial magnetic anisotropy (UMA) in Co thin films induced by high aspect ratio nanopatterned anisotropic substrates. Self-organized long grating-like nanostructures, with extreme regularities, are fabricated on Ge surfaces using Au-ion implantation at room temperature. Subsequently deposition of Co films are carried out on the same at two different angles. Magneto-optical Kerr effect measurements show strong UMA in Co films grown on ion-patterned Ge substrates, fabricated under different ion fluences, along and perpendicular to the direction of the patterns (long grating-like nanostructures). Magnetic force microscopy measurements under different externally applied magnetic fields reveal an easy domain wall motion when the field is applied along the grating-like nanostructures. On the other hand, high amplitude grating-like nanostructures hinder the spin rotation when the field is applied along the hard axis. The present study will be useful for magnetic recording media and ultra-small magnetic field sensors.

  11. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  12. Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen

    Science.gov (United States)

    Kato, Kimihiko; Kondo, Hiroki; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2011-06-01

    We have demonstrated the control of interfacial properties of Pr-oxide/Ge gate stack structure by the introduction of nitrogen. From C- V characteristics of Al/Pr-oxide/Ge 3N 4/Ge MOS capacitors, the interface state density decreases without the change of the accumulation capacitance after annealing. The TEM and TED measurements reveal that the crystallization of Pr-oxide is enhanced with annealing and the columnar structure of cubic-Pr 2O 3 is formed after annealing. From the depth profiles measured using XPS with Ar sputtering for the Pr-oxide/Ge 3N 4/Ge stack structure, the increase in the Ge component is not observed in a Pr-oxide film and near the interface between a Pr-oxide film and a Ge substrate. In addition, the N component segregates near the interface region, amorphous Pr-oxynitride (PrON) is formed at the interface. As a result, Pr-oxide/PrON/Ge stacked structure without the Ge-oxynitride interlayer is formed.

  13. Crystals in crystals

    DEFF Research Database (Denmark)

    Christensen, Claus H.; Schmidt, I.; Carlsson, A.

    2005-01-01

    A major factor governing the performance of catalytically active particles supported on a zeolite carrier is the degree of dispersion. It is shown that the introduction of noncrystallographic mesopores into zeolite single crystals (silicalite-1, ZSM-5) may increase the degree of particle dispersion...... of the zeolite particles, particularly after thermal treatment. When using mesoporous zeolites, the particles were evenly distributed throughout the mesopore system of the zeolitic support, even after calcination, leading to nanocrystals within mesoporous zeolite single crystals....

  14. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael

    2013-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  15. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael

    2010-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  16. Neutron diffraction studies of atomic structures of amorphous Fe-Ge and Ni-Ge alloys

    International Nuclear Information System (INIS)

    Yamada, Kazuyoshi; Endoh, Yasuo; Ishikawa, Yoshikazu; Watanabe, Noboru.

    1980-01-01

    The structures of Ge rich amorphous Fe-Ge and Ni-Ge alloys were studied by pulsed neutron total scattering. The partial structure factors of S sub(GeGe)(Q), S sub(NiGe)(Q) and S sub(NiNi)(Q) were determined successfully by using Ni 60 isotope for the Ni-Ge alloys. The Ge atoms in the 10 at% Ni-Ge amorphous alloy were found to construct a similar atomic structure as that of the amorphous Ge, while the intermediate short range order configuration between the tetrahedral random network (TRN) and the dense random packing (DRP) structure was found for the 30 at% Ni-Ge alloy. The Ge-Ge pair correlation for this intermediate short range order could well be reproduced by the modified Ge II microcrystalline model. (author)

  17. Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, Yoshihito, E-mail: maeda@energy.kyoto-u.ac.jp [Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Narumi, Kazumasa; Sakai, Seiji [Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Terai, Yoshikazu [Department of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); Hamaya, Kohei; Sadoh, Taizoh; Miyao, Masanobu [Department of Electronics, Kyushu University, Motooka, Fukuoka 819-0395 (Japan)

    2011-10-03

    We have investigated perfection of atomic rows on iron-based Heusler alloy films on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. Fe{sub 3}Si/Ge(111) and Fe{sub 2}CoSi/Ge(111) have a high quality of atomic rows at the heterointerface like that of perfect crystals. Fe{sub 3-x}Mn{sub x}Si/Ge(111) (x = 0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x > 0.75. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.

  18. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  19. <300> GeV team

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

  20. Lithium insertion in nanostructured TiO(2)(B) architectures.

    Science.gov (United States)

    Dylla, Anthony G; Henkelman, Graeme; Stevenson, Keith J

    2013-05-21

    Electric vehicles and grid storage devices have potentialto become feasible alternatives to current technology, but only if scientists can develop energy storage materials that offer high capacity and high rate capabilities. Chemists have studied anatase, rutile, brookite and TiO2(B) (bronze) in both bulk and nanostructured forms as potential Li-ion battery anodes. In most cases, the specific capacity and rate of lithiation and delithiation increases as the materials are nanostructured. Scientists have explained these enhancements in terms of higher surface areas, shorter Li(+) diffusion paths and different surface energies for nanostructured materials allowing for more facile lithiation and delithiation. Of the most studied polymorphs, nanostructured TiO2(B) has the highest capacity with promising high rate capabilities. TiO2(B) is able to accommodate 1 Li(+) per Ti, giving a capacity of 335 mAh/g for nanotubular and nanoparticulate TiO2(B). The TiO2(B) polymorph, discovered in 1980 by Marchand and co-workers, has been the focus of many recent studies regarding high power and high capacity anode materials with potential applications for electric vehicles and grid storage. This is due to the material's stability over multiple cycles, safer lithiation potential relative to graphite, reasonable capacity, high rate capability, nontoxicity, and low cost (Bruce, P. G.; Scrosati, B.; Tarascon, J.-M. Nanomaterials for Rechargeable Lithium Batteries. Angew. Chem., Int. Ed.2008, 47, 2930-2946). One of the most interesting properties of TiO2(B) is that both bulk and nanostructured forms lithiate and delithiate through a surface redox or pseudocapacitive charging mechanism, giving rise to stable high rate charge/discharge capabilities in the case of nanostructured TiO2(B). When other polymorphs of TiO2 are nanostructured, they still mainly intercalate lithium through a bulk diffusion-controlled mechanism. TiO2(B) has a unique open crystal structure and low energy Li

  1. Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.

    Science.gov (United States)

    Regulacio, Michelle D; Han, Ming-Yong

    2016-03-15

    are the multinary chalcogenide semiconductors (MCSs), which include the ternary I-III-VI2 semiconductors (e.g., AgGaS2, CuInS2, and CuInSe2) and the quaternary I2-II-IV-VI4 semiconductors (e.g., Cu2ZnGeS4, Cu2ZnSnS4, and Ag2ZnSnS4). These inorganic compounds consist of environmentally benign elemental components, exhibit excellent light-harvesting properties, and possess band gap energies that are well-suited for solar photon absorption. Moreover, the band structures of these materials can be conveniently modified through alloying to boost their ability to harvest visible photons. In this Account, we provide a summary of recent research on the use of ternary I-III-VI2 and quaternary I2-II-IV-VI4 semiconductor nanostructures for light-induced photocatalytic applications, with focus on hydrogen production and organic dye degradation. We include a review of the solution-based methods that have been employed to prepare multinary chalcogenide semiconductor nanostructures of varying compositions, sizes, shapes, and crystal structures, which are factors that are known to have significant influence on the photocatalytic activity of semiconductor photocatalysts. The enhancement of photocatalytic performance through creation of hybrid nanoscale architectures is also presented. Lastly, views on the current challenges and future directions are discussed in the concluding section.

  2. Oriented Nucleation of both Ge-Fresnoite and Benitoite/BaGe4O9 during the Surface Crystallisation of Glass Studied by Electron Backscatter Diffraction

    Science.gov (United States)

    Wisniewski, Wolfgang; Patschger, Marek; Murdzheva, Steliana; Thieme, Christian; Rüssel, Christian

    2016-02-01

    Two glasses of the compositions 2 BaO - TiO2 - 2.75 GeO2 and 2 BaO - TiO2 -3.67 GeO2 (also known as BTG55) are annealed at temperatures from 680 to 970 °C to induce surface crystallization. The resulting samples are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD). Ge-Fresnoite (Ba2TiGe2O8, BTG) is observed at the immediate surface of all samples and oriented nucleation is proven in both compositions. After a very fast kinetic selection, the crystal growth of BTG into the bulk occurs via highly oriented dendrites where the c-axes are oriented perpendicular to the surface. The growth of this oriented layer is finally blocked by dendritc BTG originating from bulk nucleation. The secondary phases BaTiGe3O9 (benitoite) and BaGe4O9 are also identified near the surface by XRD and localized by EBSD which additionally indicates orientation preferences for these phases. This behaviour is in contrast with previous reports from the Ba2TiSi2O8 as well as the Sr2TiSi2O8 systems.

  3. Optical switching systems using nanostructures

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  4. Kinetic coefficients in isotopically disordered crystals

    International Nuclear Information System (INIS)

    Zhernov, Arkadii P; Inyushkin, Alexander V

    2002-01-01

    Peculiarities of the behavior of kinetic coefficients, like thermal conductivity, electric conductivity, and thermoelectric power, in isotopically disordered materials are reviewed in detail. New experimental and theoretical results on the isotope effects in the thermal conductivity of diamond, Ge, and Si semiconductors are presented. The suppression effect of phonon-drag thermopower in the isotopically disordered Ge crystals is discussed. The influence of dynamic and static crystal lattice deformations on the electric conductivity of metals as well as on the ordinary phonon spectrum deformations is considered. (reviews of topical problems)

  5. Volume-change-free GeTeN films for high-performance phase-change memory

    International Nuclear Information System (INIS)

    Yin, You; Hosaka, Sumio; Zhang, Hui; Liu, Yang; Yu, Qi

    2013-01-01

    N-doping into GeTe is investigated with the aim of reducing the volume change upon crystallization, which usually induces a huge internal stress in phase-change memory devices. It is demonstrated that the thickness change upon crystallization of a N-doped GeTe (GeTeN) film is almost zero when N is doped in an appropriate amount. Cracks resulting from the stress caused by volume change disappear and the mean crystal size decreases by more than 50% upon N-doping into GeTe. It is thought that the volume-change-free behaviour is due to the formation of low-density nitride and grain refinement. (paper)

  6. High-pressure synthesis, structure, and photoluminescence of a new KSbO3-type bismuth germanate Bi3Ge3O10.5.

    Science.gov (United States)

    Cheng, Jinguang; Rettie, Alexander J E; Suchomel, Matthew R; Zhou, Haidong; Yan, Jiaqiang; Song, Jie; Marshall, Luke G; Larregola, Sebastian A; Zhou, Jianshi; Goodenough, John B

    2013-02-18

    A new Bi(3)Ge(3)O(10.5) compound has been synthesized under high pressure, P = 7 GPa, and 700 °C. Instead of the pyrochlore that is normally stabilized under high pressure, the Bi(3)Ge(3)O(10.5) crystallizes in a KSbO(3)-ype crystal structure. The crystal structure has been refined by the Rietveld method from synchrotron X-ray diffraction data. Moreover, we have also characterized the Bi(3)Ge(3)O(10.5) by X-ray photoelectron spectroscopy, photoluminescence, and specific heat.

  7. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  8. Optical properties of nitride nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

    2011-01-15

    In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Semiconductors and semimetals nanostructured systems

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Reed, Mark A

    1992-01-01

    This is the first available volume to consolidate prominent topics in the emerging field of nanostructured systems. Recent technological advancements have led to a new era of nanostructure physics, allowing for the fabrication of nanostructures whose behavior is dominated by quantum interference effects. This new capability has enthused the experimentalist and theorist alike. Innumerable possibilities have now opened up for physical exploration and device technology on the nanoscale. This book, with contributions from five pioneering researchers, will allow the expert and novice alike to explore a fascinating new field.Provides a state-of-the-art review of quantum-scale artificially nanostructured electronic systemsIncludes contributions by world-known experts in the fieldOpens the field to the non-expert with a concise introductionFeatures discussions of:Low-dimensional condensed matter physicsProperties of nanostructured, ultrasmall electronic systemsMesoscopic physics and quantum transportPhysics of 2D ele...

  10. Synthesis of One Dimensional Gold Nanostructures

    Directory of Open Access Journals (Sweden)

    Hongchen Li

    2010-01-01

    Full Text Available Gold nanostructures with shapes of rod, dumbbells, and dog bone have been fabricated by an improved seed-mediated method. It is found that the pH change (the addition of HNO3 or HCl and the presence of Ag+ ions have a great influence on the growth process and aspect ratios of these Au nanocrystals. UV-Vis-NIR absorption spectra for the Au colloidal show that the transverse plasmon absorption band locates at ~520 nm, while the longitudinal plasmon absorption band shifts in a wide spectra region of 750–1100 nm. The obtained Au nanostructures have been investigated by transmission electron microscopy, high-resolution transmission electron microscopy, and X-ray diffractometer. Based on the characterizations and FDTD simulations, most of the obtained Au nanorods are single crystals, possessing an octagonal cross-section bounded by {110} and {100} faces. One model for the anisotropic growth has been proposed. It is found that slow kinetics favor the formation of single-crystalline Au nanorods.

  11. Formation of Nb2O5 matrix and Vis-NIR absorption in Nb-Ge-O thin film.

    Science.gov (United States)

    Abe, Seishi

    2012-06-25

    This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb2O5, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infrared (NIR) regions, suggesting that a composite thin film with Ge nanocrystals dispersed in Nb2O5 matrix exhibits quantum-size effects. Accordingly, the two valuable characteristics of the Nb2O5 matrix and the vis-NIR absorption are found to be retained simultaneously in Nb-Ge-O thin films.

  12. Silver nanostructures with well-controlled shapes: synthesis, characterization and growth mechanisms

    Science.gov (United States)

    Kan, Cai-Xia; Zhu, Jie-Jun; Zhu, Xiao-Guang

    2008-08-01

    This paper describes a poly(vinylpyrollidone)-directed polyol synthesis method for the fabrication of silver (Ag) nanostructures with well-controlled shapes (such as nanorods and nanocubes) by adjusting the synthesizing parameters. The structure characterizations suggest that the Ag nanorods grow from the five-fold twinned decahedral crystal nuclei. The nature of the {1 1 1} planes of Ag crystal and the highly selective poly(vinylpyrollidone) adsorption on the {100} planes of Ag crystal nuclei are favourable for the formation of Ag nanorods and Ag nanowires. The single crystalline Ag nanocubes obtained at optimum conditions are perfect in shape and are enclosed by the {1 0 0} facets. The optical properties of the Ag nanostructures show an attractive plasma resonance, displaying a considerable dependence on the shape and size. The formation of the Ag nanostructures with well-defined shapes is probably due to the fact that the nanostructures are controlled thermodynamically and kinetically. The ability to generate shape-controlled Ag nanostructures also provides an opportunity to experimentally and systematically study the relationship between their properties and geometric shapes.

  13. Silver nanostructures with well-controlled shapes: synthesis, characterization and growth mechanisms

    International Nuclear Information System (INIS)

    Kan Caixia; Zhu Jiejun; Zhu Xiaoguang

    2008-01-01

    This paper describes a poly(vinylpyrollidone)-directed polyol synthesis method for the fabrication of silver (Ag) nanostructures with well-controlled shapes (such as nanorods and nanocubes) by adjusting the synthesizing parameters. The structure characterizations suggest that the Ag nanorods grow from the five-fold twinned decahedral crystal nuclei. The nature of the {1 1 1} planes of Ag crystal and the highly selective poly(vinylpyrollidone) adsorption on the {100} planes of Ag crystal nuclei are favourable for the formation of Ag nanorods and Ag nanowires. The single crystalline Ag nanocubes obtained at optimum conditions are perfect in shape and are enclosed by the {1 0 0} facets. The optical properties of the Ag nanostructures show an attractive plasma resonance, displaying a considerable dependence on the shape and size. The formation of the Ag nanostructures with well-defined shapes is probably due to the fact that the nanostructures are controlled thermodynamically and kinetically. The ability to generate shape-controlled Ag nanostructures also provides an opportunity to experimentally and systematically study the relationship between their properties and geometric shapes

  14. Silver nanostructures with well-controlled shapes: synthesis, characterization and growth mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Kan Caixia [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211100 (China); Zhu Jiejun [Department of Physics, Nanjing University, Nanjing 210093 (China); Zhu Xiaoguang [Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)], E-mail: cxkan@nuaa.edu.cn

    2008-08-07

    This paper describes a poly(vinylpyrollidone)-directed polyol synthesis method for the fabrication of silver (Ag) nanostructures with well-controlled shapes (such as nanorods and nanocubes) by adjusting the synthesizing parameters. The structure characterizations suggest that the Ag nanorods grow from the five-fold twinned decahedral crystal nuclei. The nature of the {l_brace}1 1 1{r_brace} planes of Ag crystal and the highly selective poly(vinylpyrollidone) adsorption on the {l_brace}100{r_brace} planes of Ag crystal nuclei are favourable for the formation of Ag nanorods and Ag nanowires. The single crystalline Ag nanocubes obtained at optimum conditions are perfect in shape and are enclosed by the {l_brace}1 0 0{r_brace} facets. The optical properties of the Ag nanostructures show an attractive plasma resonance, displaying a considerable dependence on the shape and size. The formation of the Ag nanostructures with well-defined shapes is probably due to the fact that the nanostructures are controlled thermodynamically and kinetically. The ability to generate shape-controlled Ag nanostructures also provides an opportunity to experimentally and systematically study the relationship between their properties and geometric shapes.

  15. High-pressure synthesis and superconductivity of a new binary barium germanide BaGe3.

    Science.gov (United States)

    Fukuoka, Hiroshi; Tomomitsu, Yusuke; Inumaru, Kei

    2011-07-04

    A new binary barium germanide BaGe(3) was prepared by high-pressure and high-temperature reactions using a Kawai type multi-anvil press. It crystallizes in a hexagonal unit cell with a = 6.814(1) Å, c = 5.027(8) Å, and V = 202.2(5) Å(3) (the space group P6(3)/mmc, No. 194). The unit cell contains two layers along the c axis composed of Ba atoms and Ge(3) triangular units. The triangular units stack along the c axis to form 1D columns in which the adjacent Ge(3) units turn to opposite directions. The columns, therefore, can be described as the face-sharing stacking of elongated Ge(6) octahedra. Each Ba atom is surrounded by six columns. BaGe(3) is metallic and shows superconductivity at 4.0 K. The band structure calculations revealed that there are four conduction bands mainly composed of Ge 4p and Ba 5d orbitals. From Fermi surface analysis, we confirmed that three of them have a large contribution of Ge 4pz orbitals in the vicinity of the Fermi level and show a simple 1D appearance. The remaining one contains Ge 4px, 4py, and Ba 5d contributions and shows a 2D property. © 2011 American Chemical Society

  16. Inelastic neutron scattering study of the lattice dynamics in the clathrate compound BaGe5

    Science.gov (United States)

    Candolfi, C.; Aydemir, U.; Koza, M. M.; Baitinger, M.; Grin, Yu; Steglich, F.

    2015-12-01

    We report inelastic neutron scattering (INS) measurements on the polycrystalline oP60-type clathrate BaGe5, whose crystal structure is related to the type-I clathrate Ba8Ge43□3 and to the cP124-clathrate Ba6Ge25. Our results show that BaGe5 exhibits a similar phonon density of states (PDOS) in the energy range 0-40 meV with respect to Ba8Ge43□3. The low-energy region of the PDOS spectrum (0-10 meV) consists of two peaks at 4.1 and 6.2 meV likely related to Ba-weighted modes. Compared to Ba8Ge43□3, the low-energy region of the phonon spectrum of BaGe5 shows a more complex structure, likely reflecting the presence of three distinct crystallographic sites for Ba. The specific heat data of BaGe5, reexamined in light of the INS results, indicate that the Ba-weighted modes dominate the low-temperature behavior of {{C}p} .

  17. Chemical Environment of Unusually Ge- and Pb-Rich Willemite, Tres Marias Mine, Mexico

    Directory of Open Access Journals (Sweden)

    Bernhardt Saini-Eidukat

    2016-03-01

    Full Text Available The Tres Marias carbonate-hosted Zn-Ge deposit in Chihuahua, Mexico contains willemite [Zn2SiO4] with unusually high concentrations of minor and trace elements (e.g., Pb, Ge, As, P, V; Pb concentrations are as high as 2 wt %, and Ge may reach 4000 ppm (average 900 ppm. Electron microprobe analyses and synchrotron X-ray fluorescence maps show that Zn and Ge, as well as Zn and Pb are negatively correlated, whereas Ge and Pb are positively correlated across zoned willemite crystals. In cathodoluminescence (CL images, those areas of willemite having high trace element concentrations have no, or low CL intensities, whereas zones low in trace elements (except for P display bright blue CL colors. X-ray absorption fine structure (XAFS spectroscopy was used to characterize the chemical nature of Ge and Pb in willemite. Comparisons to reference spectra of natural and artificial substances points to the presence of Ge4+ and Pb2+ in Tres Marias willemite. No evidence for Pb4+ was detected. Oscillatory zonation reflects trace element incorporation into willemite from the oxidation of primary Ge-bearing sphalerite and galena (PbS by siliceous aqueous fluids.

  18. GeNF - Experimental report 2007

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2008-01-01

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10 -7 . Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields (tomography

  19. GeNF - Experimental report 2008

    International Nuclear Information System (INIS)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas

    2009-01-01

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10 14 thermal neutrons/cm 2 s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame of the

  20. GeNF - Experimental report 2007

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2008-11-05

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10{sup -7}. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields

  1. GeNF - Experimental report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2009-12-11

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10{sup 14} thermal neutrons/cm{sup 2} s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame

  2. In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory

    KAUST Repository

    Meister, Stefan

    2011-04-26

    Phase-change memory (PCM) has been researched extensively as a promising alternative to flash memory. Important studies have focused on its scalability, switching speed, endurance, and new materials. Still, reliability issues and inconsistent switching in PCM devices motivate the need to further study its fundamental properties. However, many investigations treat PCM cells as black boxes; nanostructural changes inside the devices remain hidden. Here, using in situ transmission electron microscopy, we observe real-time nanostructural changes in lateral Ge2Sb2Te5 (GST) PCM bridges during switching. We find that PCM devices with similar resistances can exhibit distinct threshold switching behaviors due to the different initial distribution of nanocrystalline and amorphous domains, explaining variability of switching behaviors of PCM cells in the literature. Our findings show a direct correlation between nanostructure and switching behavior, providing important guidelines in the design and operation of future PCM devices with improved endurance and lower variability. © 2011 American Chemical Society.

  3. Hybrid nanostructured drug carrier with tunable and controlled drug release

    International Nuclear Information System (INIS)

    Depan, D.; Misra, R.D.K.

    2012-01-01

    We describe here a transformative approach to synthesize a hybrid nanostructured drug carrier that exhibits the characteristics of controlled drug release. The synthesis of the nanohybrid architecture involved two steps. The first step involved direct crystallization of biocompatible copolymer along the long axis of the carbon nanotubes (CNTs), followed by the second step of attachment of drug molecule to the polymer via hydrogen bonding. The extraordinary inorganic–organic hybrid architecture exhibited high drug loading ability and is physically stable even under extreme conditions of acidic media and ultrasonic irradiation. The temperature and pH sensitive characteristics of the hybrid drug carrier and high drug loading ability merit its consideration as a promising carrier and utilization of the fundamental aspects used for synthesis of other promising drug carriers. The higher drug release response during the application of ultrasonic frequency is ascribed to a cavitation-type process in which the acoustic bubbles nucleate and collapse releasing the drug. Furthermore, the study underscores the potential of uniquely combining CNTs and biopolymers for drug delivery. - Graphical abstract: Block-copolymer crystallized on carbon nanotubes (CNTs). Nanohybrid drug carrier synthesized by attaching doxorubicin (DOX) to polymer crystallized CNTs. Crystallized polymer on CNTs provide mechanical stability. Triggered release of DOX. Highlights: ► The novel synthesis of a hybrid nanostructured drug carrier is described. ► The drug carrier exhibits high drug loading ability and is physically stable. ► The high drug release is ascribed to a cavitation-type process.

  4. A Review on the Low-Dimensional and Hybridized Nanostructured Diamond Films

    Directory of Open Access Journals (Sweden)

    Hongdong Li

    2015-01-01

    Full Text Available In the last decade, besides the breakthrough of high-rate growth of chemical vapor deposited single-crystal diamonds, numerous nanostructured diamond films have been rapidly developed in the research fields of the diamond-based sciences and industrial applications. The low-dimensional diamonds of two-dimensional atomic-thick nanofilms and nanostructural diamond on the surface of bulk diamond films have been theoretically and experimentally investigated. In addition, the diamond-related hybrid nanostructures of n-type oxide/p-type diamond and n-type nitride/p-type diamond, having high performance physical and chemical properties, are proposed for further applications. In this review, we first briefly introduce the three categories of diamond nanostructures and then outline the current advances in these topics, including their design, fabrication, characterization, and properties. Finally, we address the remaining challenges in the research field and the future activities.

  5. Template-free solvothermal synthesis of 3D hierarchical nanostructured boehmite assembled by nanosheets

    Science.gov (United States)

    Li, Guangci; Guan, Lili; Liu, Yunqi; Liu, Chenguang

    2012-09-01

    In the absence of template and surfactant, hierarchical nanostructured boehmite was synthesized via a simple solvothermal route using aluminum nitrate as aluminum source and isopropanol-toluene mixture as solvent. The crystal structures, morphologies and textural properties of products were characterized by X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and N2 adsorption-desorption technique. The as-obtained hierarchical nanostructures consist of nanosheets keeping Brunauer-Emmett-Teller (BET) specific surface area and pore volume of ca. 264.7 m2/g and 1.2 cm3/g, respectively. The experimental results show that the longer reaction time and the lower reaction temperature are unfavorable to the formation of hierarchical nanostructures. Moreover, the properties of solvent have important influence on the morphology of product. The possible formation mechanism of boehmite hierarchical nanostructures was proposed and discussed.

  6. H₂ sensing properties of two-dimensional zinc oxide nanostructures.

    Science.gov (United States)

    Tonezzer, Matteo; Iannotta, Salvatore

    2014-05-01

    In this work we have grown particular zinc oxide two-dimensional nanostructures which are essentially a series of hexagonal very thin sheets. The hexagonal wurtzite crystal structure gives them their peculiar shape, whose dimensions are few microns wide, with a thickness in the order of 25 nm. Such kind of nanostructure, grown by thermal oxidation of evaporated metallic zinc on a silica substrate, has been used to fabricate conductometric gas sensors, investigated then for hydrogen gas detection. The "depletion layer sensing mechanism" is clarified, explaining how the geometrical factors of one- and two-dimensional nanostructures affect their sensing parameters. The comparison with one-dimensional ZnO nanowires based structures shows that two-dimensional nanostructures are ideal for gas sensing, due to their tiny thickness, which is comparable to the depletion-layer thickness, and their large cross-section, which increases the base current, thus lowering the limit of detection. The response to H₂ has been found good even to sub-ppm concentrations, with response and recovery times shorter than 18s in the whole range of H₂ concentrations investigated (500 ppb-10 ppm). The limit of detection has been found around 200 ppb for H₂ gas even at relatively low working temperature (175 °C). Copyright © 2014 Elsevier B.V. All rights reserved.

  7. Synthesis and Characterization of the Quaternary Thio-aluminogermanates A(AlS2)(GeS2) (A = Na, K)

    KAUST Repository

    Al-Bloushi, Mohammed

    2015-05-27

    The quaternary thioaluminogermanates Na(AlS2)(GeS2) (1) and K(AlS2)(GeS2) (2) crystallize in the tetragonal space group I4/mcm (no. 140) with unit cell parameters a = 7.4274(11) Å, c = 5.8560(12) Å for Na(AlS2)(GeS2) and a = 7.8826(2) Å, c = 5.8642(4) Å for K(AlS2)(GeS2). The crystal structure comprises of one-dimensional [(AlS2)(GeS2)]- anionic chains with Al and Ge sharing the tetrahedral site. The alkali metal cations fill the square antiprismatic voids between chains. Both 1 and 2 are semiconductors with bandgap of around 3.6 eV and 3.5 eV, respectively. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  9. Construction of Ge(Li)-NaI(Tl) pair spectrometer

    International Nuclear Information System (INIS)

    Hassan, A.M.; El-Kady, A.A.; Eissa, E.A.; Rofail, N.B.; Abu-Zeid, H.M.; Hamouda, I.

    1978-01-01

    The details of the construction and tests of the Ge (li)-NaI (Tl) pair spectrometer has been presented. The spectrometer was set up at one of the horizontal channels of the ET-RR-1 research reactor using a true coaxial Ge (li) detector of sensitive volume 30 cm 3 surrounded by an 8''L. x8''0annulus NaI (Tl) crystal. The coincidence technique is carried out between the central Ge (Li) detector and the surrounding NaI (Tl) detector to detect the annihilation quanta. The operating conditions and the preliminary experimental results were obtained using the gamma-ray spectra of 24 Na and ThC'' as radioactive sources. The high energy part of the gamma-ray spectrum following the thermal neutron capture in 35 Cl is taken, as check for the validity of the spectrometer. By the method used at energies above 2 Mev, the Compton background of Ge (Li) detector system is reduced, and the gamma ray energy gives only one peak in the pulse height distribution curve. The spectrometer gives slightly superior resolution compared to the single spectrometer and is capable of determining the energies of capture gamma rays (with well defined spectral peaks) to an accuracy of 1 kev. The spectrometer is very useful for resolving closely spaced lines and for observation of weak lines near the high energy and of gamma-ray spectrum and many weak intensity gamma-ray can be studied

  10. Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

    Science.gov (United States)

    Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

    Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

  11. Fabrication of nanowires and nanostructures

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  12. Mechanical design of DNA nanostructures.

    Science.gov (United States)

    Castro, Carlos E; Su, Hai-Jun; Marras, Alexander E; Zhou, Lifeng; Johnson, Joshua

    2015-04-14

    Structural DNA nanotechnology is a rapidly emerging field that has demonstrated great potential for applications such as single molecule sensing, drug delivery, and templating molecular components. As the applications of DNA nanotechnology expand, a consideration of their mechanical behavior is becoming essential to understand how these structures will respond to physical interactions. This review considers three major avenues of recent progress in this area: (1) measuring and designing mechanical properties of DNA nanostructures, (2) designing complex nanostructures based on imposed mechanical stresses, and (3) designing and controlling structurally dynamic nanostructures. This work has laid the foundation for mechanically active nanomachines that can generate, transmit, and respond to physical cues in molecular systems.

  13. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  14. Magneto-acoustic properties of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Yasin, S.; Andreev, Alexander V.; Sytcheva, A.; Wosnitza, J.; Zherlitsyn, S.

    2010-01-01

    Roč. 159, 1-2 (2010), 105-108 ISSN 0022-2291 R&D Projects: GA ČR GA202/09/0339 Grant - others:EuroMagNET(XE) 228043 Institutional research plan: CEZ:AV0Z10100520 Keywords : ultrasound * UTX compounds * pulse fields * field-induced transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.403, year: 2010

  15. Low temperature AC susceptibility of UCoGe crystal

    Czech Academy of Sciences Publication Activity Database

    Prokleška, J.; Pospíšil, J.; Vejpravová Poltierová, J.; Sechovský, V.; Šebek, Josef

    2010-01-01

    Roč. 200, č. 1 (2010), 012161/1-012161/4 ISSN 1742-6588. [International Conference on Magnetism - ICM 2009. Karlsruhe, 26.07.2009-31.07.2009] Institutional research plan: CEZ:AV0Z10100520 Keywords : magnetism * uranium * intermetallics Subject RIV: BM - Solid Matter Physics ; Magnetism

  16. Structure of the novel ternary hydrides Li4Tt2D (Tt=Si and Ge)

    International Nuclear Information System (INIS)

    Wu Hui; Rush, J.J.; Maryland Univ., College Park, MD; Hartman, M.R.; Oregon State Univ., Corvallis, OR; Udovic, T.J.; Zhou Wei; Pennsylvania Univ., Philadelphia, PA; Bowman, R.C. Jr.; Vajo, J.J.

    2007-01-01

    The crystal structures of newly discovered Li 4 Ge 2 D and Li 4 Si 2 D ternary phases were solved by direct methods using neutron powder diffraction data. Both structures can be described using a Cmmm orthorhombic cell with all hydrogen atoms occupying Li 6 -octahedral interstices. The overall crystal structure and the geometry of these interstices are compared with those of other related phases, and the stabilization of this novel class of ternary hydrides is discussed. (orig.)

  17. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  18. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  19. Investigation on CO catalytic oxidation reaction kinetics of faceted perovskite nanostructures loaded with Pt

    KAUST Repository

    Yin, S. M.

    2017-01-18

    Perovskite lead titanate nanostructures with specific {111}, {100} and {001} facets exposed, have been employed as supports to investigate the crystal facet effect on the growth and CO catalytic activity of Pt nanoparticles. The size, distribution and surface chemical states of Pt on the perovskite supports have been significantly modified, leading to a tailored conversion temperature and catalytic kinetics towards CO catalytic oxidation.

  20. From Bloch to random lasing in ZnO self-assembled nanostructures

    DEFF Research Database (Denmark)

    Garcia-Fernandez, Pedro David; Cefe, López

    2013-01-01

    In this paper, we present measurements on UV lasing in ZnO ordered and disordered nanostructures. Bloch lasing is achieved in the ordered structures by exploiting very low group-velocity Bloch modes in ZnO photonic crystals. In the second case, random lasing is observed in ZnO photonic glasses. W...

  1. Synthesis of ZnO comb-like nanostructures for high sensitivity H2S ...

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) comb-like nanostructures were successfully synthesized on the silicon substrate without a catalyst via chemical vapour deposition. The morphology and crystal structure of the product were characterized by scanning electron microscope and X-ray diffractometer. In this research, a simple gas sensor was ...

  2. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  3. Balance of Nanostructure and Bimetallic Interactions in Pt Model Fuel Cell Catalysts

    DEFF Research Database (Denmark)

    Friebel, Daniel; Viswanathan, Venkatasubramanian; Miller, Daniel J.

    2012-01-01

    We have studied the effect of nanostructuring in Pt monolayer model electrocatalysts on a Rh(111) single-crystal substrate on the adsorption strength of chemisorbed species. In situ high energy resolution fluorescence detection X-ray absorption spectroscopy at the Pt L3 edge reveals characteristi...

  4. Synthesis of ZnO comb-like nanostructures for high sensitivity H2S ...

    Indian Academy of Sciences (India)

    2017-09-15

    Sep 15, 2017 ... Abstract. Zinc oxide (ZnO) comb-like nanostructures were successfully synthesized on the silicon substrate without a catalyst via chemical vapour deposition. The morphology and crystal structure of the product were characterized by scanning electron microscope and X-ray diffractometer. In this research, a ...

  5. Magnetism in carbon nanostructures

    CERN Document Server

    Hagelberg, Frank

    2017-01-01

    Magnetism in carbon nanostructures is a rapidly expanding field of current materials science. Its progress is driven by the wide range of applications for magnetic carbon nanosystems, including transmission elements in spintronics, building blocks of cutting-edge nanobiotechnology, and qubits in quantum computing. These systems also provide novel paradigms for basic phenomena of quantum physics, and are thus of great interest for fundamental research. This comprehensive survey emphasizes both the fundamental nature of the field, and its groundbreaking nanotechnological applications, providing a one-stop reference for both the principles and the practice of this emerging area. With equal relevance to physics, chemistry, engineering and materials science, senior undergraduate and graduate students in any of these subjects, as well as all those interested in novel nanomaterials, will gain an in-depth understanding of the field from this concise and self-contained volume.

  6. Nanostructured epoxi networks

    International Nuclear Information System (INIS)

    Soares, Bluma G.; Silva, Adriana A.; Sollymossy, Ana Paula F.; Dahmouche, Karim

    2011-01-01

    Nanostructured epoxy materials including nanocomposites were obtained by incorporating different organic or inorganic systems. Epoxy networks containing rubber particles with nanometric size have been obtained by an appropriate functionalization of the elastomers, in order to improve the interfacial adhesion between rubber and epoxy matrix. This adhesion also conferred an improvement of the impact resistance and thermal properties. This work also presents some results related to the utilization of inorganic nanoparticles in epoxy systems, including organo clay or hybrid materials based on functionalized silsesquioxanes. The nanoscopic characterization of these materials were performed by small angle X-ray scattering (SAXS) combined with transmission electron microscopy (TEM). The effect of dispersion degree of the inorganic nanoparticles on the rheological properties was also investigated. (author)

  7. @AuAg nanostructures

    Science.gov (United States)

    Singh, Rina; Soni, R. K.

    2014-09-01

    Bimetallic and trimetallic nanoparticles have attracted significant attention in recent times due to their enhanced electrochemical and catalytic properties compared to monometallic nanoparticles. The numerical calculations using Mie theory has been carried out for three-layered metal nanoshell dielectric-metal-metal (DMM) system consisting of a particle with a dielectric core (Al@Al2O3), a middle metal Ag (Au) layer and an outer metal Au (Ag) shell. The results have been interpreted using plasmon hybridization theory. We have also prepared Al@Al2O3@Ag@Au and Al@Al2O3@AgAu triple-layered core-shell or alloy nanostructure by two-step laser ablation method and compared with calculated results. The synthesis involves temporal separations of Al, Ag, and Au deposition for step-by-step formation of triple-layered core-shell structure. To form Al@Ag nanoparticles, we ablated silver for 40 min in aluminium nanoparticle colloidal solution. As aluminium oxidizes easily in water to form alumina, the resulting structure is core-shell Al@Al2O3. The Al@Al2O3 particle acts as a seed for the incoming energetic silver particles for multilayered Al@Al2O3@Ag nanoparticles is formed. The silver target was then replaced by gold target and ablation was carried out for different ablation time using different laser energy for generation of Al@Al2O3@Ag@Au core-shell or Al@Al2O3@AgAu alloy. The formation of core-shell and alloy nanostructure was confirmed by UV-visible spectroscopy. The absorption spectra show shift in plasmon resonance peak of silver to gold in the range 400-520 nm with increasing ablation time suggesting formation of Ag-Au alloy in the presence of alumina particles in the solution.

  8. Portable, low-power, mechanically cooled Ge spectrometer

    International Nuclear Information System (INIS)

    Becker, J.A.; Cork, C.P.; Fabris, L.; Madden, N.W.

    2003-01-01

    A light-weight portable mechanically cooled γ-ray spectrometer has been constructed and tested. The spectrometer is based on a high-purity n-type Ge coaxial crystal, ∼5 cm longx5 cm diameter, a small, low-power Stirling cycle microcooler, and a low-power custom electronics package. The energy resolution of the spectrometer is ∼3.5 keV at E γ =662 keV, the power requirements are ∼15 W DC, and the combined weight of the Ge, housing, and controller is approximately 10 pounds. The spectrometer qualifies therefore as ''hand held''. It is suitable for field operations, because of its light-weight, low-power draw, and operational lifetime. The microcooler itself has a MTBF >30,000 h, and the spectrometer runs for several months (at least 6) before a 2 day recycle is required

  9. High temperature XRD of Cu2GeSe3

    International Nuclear Information System (INIS)

    Premkumar, D. S.; Malar, P.; Chetty, Raju; Mallik, Ramesh Chandra

    2015-01-01

    The Cu 2 GeSe 3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 °C to 450 °C. The reitveld refinement confirms Cu 2 GeSe 3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 °C to 400 °C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature

  10. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  11. Nanostructured Photovoltaics for Space Power

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA NSTRF proposal entitled Nanostructured Photovoltaics for Space Power is targeted towards research to improve the current state of the art photovoltaic...

  12. 76 FR 30573 - Airworthiness Directives; General Electric Company (GE) GE90-110B1 and GE90-115B Turbofan Engines

    Science.gov (United States)

    2011-05-26

    ... applies to General Electric Company (GE) GE90-110B1 and GE90-115B turbofan engines with high-pressure...-0278; Directorate Identifier 2010-NE-10-AD] RIN 2120-AA64 Airworthiness Directives; General Electric Company (GE) GE90- 110B1 and GE90-115B Turbofan Engines AGENCY: Federal Aviation Administration (FAA), DOT...

  13. Structural and vibrational investigations on Ge{sub 34}Sb{sub 66} solid solutions produced by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Rebelo, Q.H.F.; Cotta, E.A. [Departamento de Física, Universidade Federal do Amazonas, 69077-000 Manaus, Amazonas (Brazil); Souza, S.M. de, E-mail: s.michielon@gmail.com [Departamento de Física, Universidade Federal do Amazonas, 69077-000 Manaus, Amazonas (Brazil); Trichês, D.M. [Departamento de Física, Universidade Federal do Amazonas, 69077-000 Manaus, Amazonas (Brazil); Machado, K.D. [Departamento de Física, Centro Politécnico, Universidade Federal do Paraná, 81531-990 Curitiba, Paraná (Brazil); Lima, J.C. de; Grandi, T.A. [Departamento de Física, Centro de Ciências Exatas, Universidade Federal de Santa Catarina, 88040-900 Florianópolis, Santa Catarina (Brazil); Poffo, C.M. [Departamento de Eng. Mecânica, Centro de Ciências Tecnológicas, Universidade Federal de Santa Catarina, 88040-900 Florianópolis, Santa Catarina (Brazil); Manzato, L. [Instituto Federal de Educação, Ciência e Tecnologia do Amazonas, 69075-351 Manaus, Amazonas (Brazil)

    2013-10-25

    Highlights: •A Ge{sub 34}Sb{sub 66} solid solution was prepared by mechanical alloying. •X-ray diffraction results indicate complete dissolution of Ge on the Sb matrix. •Raman measurements indicate the presence of nanocrystalline Ge dispersed in the matrix. -- Abstract: A nanostructured solid solution Ge{sub 34}Sb{sub 66} was produced from Ge and Sb by mechanical alloying and its structural and vibrational properties were investigated by X-ray diffraction (XRD) and micro-Raman spectroscopy. The Rietveld refinement of the XRD measurements allowed the investigation of the evolution of the solid solution with the milling time. The Bragg peaks of the Sb solvent phase showed a strongly reflection-indices-dependent line broadening due to the spatial variation of the Sb/Ge ratio. The asymmetric broadening in the deformed peaks was analyzed considering the Stephens model. Volume fractions of crystalline and interfacial components of the milled powder were estimated from the XRD patterns. Although XRD measurements indicated the formation of a solid solution, Raman measurements revealed the presence of nanocrystalline Ge, and its crystallite size was estimated from the Raman analysis.

  14. Qualification study of LiF flight crystals for the objective crystal spectrometer on the SPECTRUM-X-GAMMA satellite

    DEFF Research Database (Denmark)

    Christensen, Finn Erland; Rasmussen, I.; Schnopper, Herbert W.

    1992-01-01

    The Objective Crystal Spectrometer (OXS) on the SPECTRUM-X-GAMMA satellite will carry these types of natural crystals LiF(220), Ge(111) and RAP(001). They will be used to study, among others, the H- and the He-like emission from the cosmically important elements Fe, S, Ar and O. More than 300 Li...

  15. Synthesis of vertically aligned metal oxide nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-03-03

    Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1 -dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or undoped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.

  16. Developing 1D nanostructure arrays for future nanophotonics

    Directory of Open Access Journals (Sweden)

    Cooke DG

    2006-01-01

    Full Text Available AbstractThere is intense and growing interest in one-dimensional (1-D nanostructures from the perspective of their synthesis and unique properties, especially with respect to their excellent optical response and an ability to form heterostructures. This review discusses alternative approaches to preparation and organization of such structures, and their potential properties. In particular, molecular-scale printing is highlighted as a method for creating organized pre-cursor structure for locating nanowires, as well as vapor–liquid–solid (VLS templated growth using nano-channel alumina (NCA, and deposition of 1-D structures with glancing angle deposition (GLAD. As regards novel optical properties, we discuss as an example, finite size photonic crystal cavity structures formed from such nanostructure arrays possessing highQand small mode volume, and being ideal for developing future nanolasers.

  17. Debye screening length effects of nanostructured materials

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2014-01-01

    This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

  18. Nanoparticles in liquid crystals, and liquid crystals in nanoparticles

    Science.gov (United States)

    de Pablo, Juan

    2015-03-01

    Liquid crystals are remarkably sensitive to interfacial interactions. Small perturbations at a liquid crystal interface, for example, can be propagated over relatively long length scales, thereby providing the basis for a wide range of applications that rely on amplification of molecular events into macroscopic observables. Our recent research efforts have focused on the reverse phenomenon; that is, we have sought to manipulate the interfacial assembly of nanoparticles or the organization of surface active molecules by controlling the structure of a liquid crystal. This presentation will consist of a review of the basic principles that are responsible for liquid crystal-mediated interactions, followed by demonstrations of those principles in the context of two types of systems. In the first, a liquid crystal is used to direct the assembly of nanoparticles; through a combination of molecular and continuum models, it is found that minute changes in interfacial energy and particle size lead to liquid-crystal induced attractions that can span multiple orders of magnitude. Theoretical predictions are confirmed by experimental observations, which also suggest that LC-mediated assembly provides an effective means for fabrication of plasmonic devices. In the second type of system, the structure of a liquid crystal is controlled by confinement in submicron droplets. The morphology of the liquid crystal in a drop depends on a delicate balance between bulk and interfacial contributions to the free energy; that balance can be easily perturbed by adsorption of analytes or nanoparticles at the interface, thereby providing the basis for development of hierarchical assembly of responsive, anisotropic materials. Theoretical predictions also indicate that the three-dimensional order of a liquid crystal can be projected onto a two-dimensional interface, and give rise to novel nanostructures that are not found in simple isotropic fluids.

  19. Raman spectrum analysis on the solid-liquid boundary layer of BGO crystal growth

    International Nuclear Information System (INIS)

    Zhang Xia; Yin Shaotang; Wan Songming; Zhang Qingli; You Jinglin; Chen Hui; Zhao Sijie

    2007-01-01

    We study the Raman spectra of Bi 4 Ge 3 O 12 crystal at different temperatures, as well as its melt. The structure characters of the single crystal, melt and growth solid-liquid boundary layer of BGO are investigated by their high-temperature Raman spectra for the first time. The rule of structure change of BGO crystal with increasing temperature is analysed. The results show that there exists [GeO 4 ] polyhedral structure and Bi ion independently in BGO melt. The bridge bonds Bi-O-Bi and Bi-O-Ge appear in the crystal and at the boundary layer, but disappear in the melt. The structure of the growth solid-liquid boundary layer is similar to that of BGO crystal. In the melt, the long-range order structure of the crystal disappears. The thickness of the growth solid-liquid boundary layer of BGO crystal is about 50 μm. (authors)

  20. Crystallographic and magnetic structure of the novel compound ErGe 1.83

    Science.gov (United States)

    Oleksyn, O.; Schobinger-Papamantellos, P.; Ritter, C.; de Groot, C. H.; Buschow, K. H. J.

    1997-02-01

    The crystal structure and the magnetic ordering of the novel orthorhombic compound ErGe 2-x has been studied by neutron powder diffraction and magnetic measurements. The crystal structure belongs to the DyGe 1.85-type (space group Cmc2 1)·ErGe 2-x ( x = 0.17 (2)) orders antiferromagnetically below TN = 6 K and displays a metamagnetic behaviour. The magnetic cell has the same size as the chemical unit cell ( q = 0 ). The magnetic space group is Cmc2 1 (Sh 36173). At T = 1.5 K the magnetic moments of the two erbium sites have the same ordered magnetic moment values of 7.63 (6) μB/Er and are antiferromagnetically coupled leading to an uniaxial structure along the a direction.

  1. Synthesis and the crystal and molecular structure of the silver(I)–germanium(IV) polymeric complex with citrate anions ([Ag{sub 2}Ge(HCit){sub 2}(H{sub 2}O){sub 2}] ∙ 2H{sub 2}O){sub n}

    Energy Technology Data Exchange (ETDEWEB)

    Sergienko, V. S., E-mail: sergienko@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Martsinko, E. E.; Seifullina, I. I. [Mechnikov Odessa National University (Ukraine); Churakov, A. V. [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Chebanenko, E. A. [Mechnikov Odessa National University (Ukraine)

    2016-03-15

    The synthesis and X-ray diffraction study of compound ([Ag{sub 2}Ge(HCit){sub 2}(H{sub 2}O){sub 2}] ∙ 2H{sub 2}O){sub n}, where H{sub 4}Cit is the citric acid, are performed. In the polymeric structure, the HCit{sup 3–} ligand fulfils the tetradentate chelate–μ{sub 4}-bridging (3Ag, Ge) function (tridentate with respect to Ge and Ag atoms). The Ge atom is octahedrally coordinated by six O atoms of two HCit{sup 3–}ligands. The coordination polyhedron of the Ag atom is an irregular five-vertex polyhedron [four O atoms of four HCit{sup 3–} ligands and the O(H{sub 2}O) atom]. An extended system of O–H···O hydrogen bonds connects complex molecules into a supramolecular 3D-framework.

  2. Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4

    NARCIS (Netherlands)

    Brück, E.H.; Nazih, M.; de Visser, A.; Zhang, L.; Tegus, O.

    2003-01-01

    We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T0~240 K, large steps in the relative length change ÄL/L along the principle crystallographic axes are observed. The

  3. In situ observation of electron beam irradiation effects in oxidized polycrystalline Si{sub 1-x}Ge{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Han-Byul; Bae, Jee-Hwan; Kwak, Kyung-Hwan; Lee, Jae-Wook; Park, Min-Ho [School of Advanced Materials Sci. and Eng. and Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Ko, Dae-Hong [Department of Ceramic Eng., Yonsei University, Seoul 120-749 (Korea, Republic of); Yang, Cheol-Woong [School of Advanced Materials Sci. and Eng. and Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)], E-mail: cwyang@skku.edu

    2008-04-01

    This study examined the morphological and compositional changes that occur in oxidized poly-Si{sub 1-x}Ge{sub x} film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO{sub 2} and GeO{sub 2} phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si{sub 0.6}Ge{sub 0.4} films, the agglomeration of GeO{sub 2} was observed at the surface region. On the other hand, in the case of the oxidized poly-Si{sub 0.4}Ge{sub 0.6} films, the crystallization of GeO{sub 2} occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

  4. Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

    Directory of Open Access Journals (Sweden)

    L. Tsybeskov

    2008-01-01

    Full Text Available Three-dimensional SiGe nanostructures grown on Si (SiGe/Si using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.

  5. Nanosecond pulsed laser ablation of Ge investigated by employing photoacoustic deflection technique and SEM analysis

    Energy Technology Data Exchange (ETDEWEB)

    Yaseen, Nazish; Bashir, Shazia; Shabbir, Muhammad Kaif; Jalil, Sohail Abdul; Akram, Mahreen; Hayat, Asma; Mahmood, Khaliq; Haq, Faizan-ul; Ahmad, Riaz; Hussain, Tousif

    2016-06-01

    Nanosecond pulsed laser ablation phenomena of single crystal Ge (100) has been investigated by employing photoacoustic deflection as well as SEM analysis techniques. Nd: YAG laser (1064 nm, 10 ns, 1–10 Hz) at various laser fluences ranging from 0.2 to 11 J cm{sup −2} is employed as pump beam to ablate Ge targets. In order to evaluate in-situe ablation threshold fluence of Ge by photoacoustic deflection technique, Continuous Wave (CW) He–Ne laser (632 nm, power 10 mW) is employed as a probe beam. It travels parallel to the target surface at a distance of 3 mm and after passing through Ge plasma it causes deflection due to density gradient of acoustic waves. The deflected signal is detected by photodiode and is recorded by oscilloscope. The threshold fluence of Ge, the velocity of ablated species and the amplitude of the deflected signal are evaluated. The threshold fluence of Ge comes out to be 0.5 J cm{sup −2} and is comparable with the analytical value. In order to compare the estimated value of threshold with ex-situe measurements, the quantitative analysis of laser irradiated Ge is performed by using SEM analysis. For this purpose Ge is exposed to single and multiple shots of 5, 10, 50 and 100 at various laser fluences ranging from 0.2 to 11 J cm{sup −2}. The threshold fluence for single and multiple shots as well as incubation coefficients are evaluated. It is observed that the value of incubation co-efficient decreases with increasing number of pulses and is therefore responsible for lowering the threshold fluence of Ge. SEM analysis also reveals the growth of various features such as porous structures, non-uniform ripples and blisters on the laser irradiated Ge. It is observed that both the fluence as well as number of laser shots plays a significant role for the growth of these structures.

  6. Nanosecond pulsed laser ablation of Ge investigated by employing photoacoustic deflection technique and SEM analysis

    International Nuclear Information System (INIS)

    Yaseen, Nazish; Bashir, Shazia; Shabbir, Muhammad Kaif; Jalil, Sohail Abdul; Akram, Mahreen; Hayat, Asma; Mahmood, Khaliq; Haq, Faizan-ul; Ahmad, Riaz; Hussain, Tousif

    2016-01-01

    Nanosecond pulsed laser ablation phenomena of single crystal Ge (100) has been investigated by employing photoacoustic deflection as well as SEM analysis techniques. Nd: YAG laser (1064 nm, 10 ns, 1–10 Hz) at various laser fluences ranging from 0.2 to 11 J cm −2 is employed as pump beam to ablate Ge targets. In order to evaluate in-situe ablation threshold fluence of Ge by photoacoustic deflection technique, Continuous Wave (CW) He–Ne laser (632 nm, power 10 mW) is employed as a probe beam. It travels parallel to the target surface at a distance of 3 mm and after passing through Ge plasma it causes deflection due to density gradient of acoustic waves. The deflected signal is detected by photodiode and is recorded by oscilloscope. The threshold fluence of Ge, the velocity of ablated species and the amplitude of the deflected signal are evaluated. The threshold fluence of Ge comes out to be 0.5 J cm −2 and is comparable with the analytical value. In order to compare the estimated value of threshold with ex-situe measurements, the quantitative analysis of laser irradiated Ge is performed by using SEM analysis. For this purpose Ge is exposed to single and multiple shots of 5, 10, 50 and 100 at various laser fluences ranging from 0.2 to 11 J cm −2 . The threshold fluence for single and multiple shots as well as incubation coefficients are evaluated. It is observed that the value of incubation co-efficient decreases with increasing number of pulses and is therefore responsible for lowering the threshold fluence of Ge. SEM analysis also reveals the growth of various features such as porous structures, non-uniform ripples and blisters on the laser irradiated Ge. It is observed that both the fluence as well as number of laser shots plays a significant role for the growth of these structures.

  7. Crystal Splitting in the Growth of Bi2S3

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jing; Alivisatos, A. Paul

    2006-06-15

    Novel Bi{sub 2}S{sub 3} nanostructures with a sheaf-like morphology are obtained via reaction of bismuth acetate-oleic acid complex with elemental sulfur in 1-octadecence. We propose these structures form by the splitting crystal growth mechanism, which is known to account for the morphology some mineral crystals assume in nature. By controlling the synthetic parameters, different forms of splitting, analogous to observed in minerals, are obtained in our case of Bi{sub 2}S{sub 3}. These new and complex Bi{sub 2}S{sub 3} nanostructures are characterized by TEM, SEM, XRD and ED.

  8. Aqueous electrodeposition of Ge monolayers.

    Science.gov (United States)

    Liang, Xuehai; Kim, Youn-Geun; Gebergziabiher, Daniel K; Stickney, John L

    2010-02-16

    The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

  9. Semiconductor quantum optics with tailored photonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne

    2011-06-15

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of

  10. Semiconductor quantum optics with tailored photonic nanostructures

    International Nuclear Information System (INIS)

    Laucht, Arne

    2011-01-01

    This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to

  11. Crystal Systems.

    Science.gov (United States)

    Schomaker, Verner; Lingafelter, E. C.

    1985-01-01

    Discusses characteristics of crystal systems, comparing (in table format) crystal systems with lattice types, number of restrictions, nature of the restrictions, and other lattices that can accidently show the same metrical symmetry. (JN)

  12. Virtual Crystallizer

    Energy Technology Data Exchange (ETDEWEB)

    Land, T A; Dylla-Spears, R; Thorsness, C B

    2006-08-29

    Large dihydrogen phosphate (KDP) crystals are grown in large crystallizers to provide raw material for the manufacture of optical components for large laser systems. It is a challenge to grow crystal with sufficient mass and geometric properties to allow large optical plates to be cut from them. In addition, KDP has long been the canonical solution crystal for study of growth processes. To assist in the production of the crystals and the understanding of crystal growth phenomena, analysis of growth habits of large KDP crystals has been studied, small scale kinetic experiments have been performed, mass transfer rates in model systems have been measured, and computational-fluid-mechanics tools have been used to develop an engineering model of the crystal growth process. The model has been tested by looking at its ability to simulate the growth of nine KDP boules that all weighed more than 200 kg.

  13. Crystal Engineering

    Indian Academy of Sciences (India)

    Nangia (2002). “Today, research areas under the wide umbrella of crystal engineering include: supramolecular synthesis; nanotechnology; separation science and catalysis; supramolecular materials and devices; polymorphism; cocrystals, crystal structure prediction; drug design and ligand–protein binding.”

  14. Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

    International Nuclear Information System (INIS)

    Luttge, Regina

    2009-01-01

    This topical review provides an overview of nanolithographic techniques for nanoarrays. Using patterning techniques such as lithography, normally we aim for a higher order architecture similarly to functional systems in nature. Inspired by the wealth of complexity in nature, these architectures are translated into technical devices, for example, found in integrated circuitry or other systems in which structural elements work as discrete building blocks in microdevices. Ordered artificial nanostructures (arrays of pillars, holes and wires) have shown particular properties and bring about the opportunity to modify and tune the device operation. Moreover, these nanostructures deliver new applications, for example, the nanoscale control of spin direction within a nanomagnet. Subsequently, we can look for applications where this unique property of the smallest manufactured element is repetitively used such as, for example with respect to spin, in nanopatterned magnetic media for data storage. These nanostructures are generally called nanoarrays. Most of these applications require massively parallel produced nanopatterns which can be directly realized by laser interference (areas up to 4 cm 2 are easily achieved with a Lloyd's mirror set-up). In this topical review we will further highlight the application of laser interference as a tool for nanofabrication, its limitations and ultimate advantages towards a variety of devices including nanostructuring for photonic crystal devices, high resolution patterned media and surface modifications of medical implants. The unique properties of nanostructured surfaces have also found applications in biomedical nanoarrays used either for diagnostic or functional assays including catalytic reactions on chip. Bio-inspired templated nanoarrays will be presented in perspective to other massively parallel nanolithography techniques currently discussed in the scientific literature. (topical review)

  15. Surfactant-thermal syntheses, structures, and magnetic properties of Mn-Ge-sulfides/selenides

    KAUST Repository

    Zhang, Guodong

    2014-10-06

    Although either surfactants or amines have been investigated to direct the crystal growth of metal chalcogenides, the synergic effect of organic amines and surfactants to control the crystal growth has not been explored. In this report, several organic bases (hydrazine monohydrate, ethylenediamine (en), 1,2-propanediamine (1,2-dap), and 1,3-propanediamine (1,3-dap)) have been employed as structure-directing agents (SDAs) to prepare four novel chalcogenides (Mn3Ge2S7(NH3)4 (1), [Mn(en)2(H2O)][Mn(en)2MnGe3Se9] (2), (1,2-dapH)2{[Mn(1,2-dap)2]Ge2Se7} (3), and (1,3-dapH)(puH)MnGeSe4(4) (pu = propyleneurea) under surfactant media (PEG-400). These as-prepared new crystalline materials provide diverse metal coordination geometries, including MnS3N tetrahedra, MnGe2Se7 trimer, and MnGe3Se10 T2 cluster. Compounds 1-3 have been fully characterized by single-crystal X-ray diffraction (XRD), powder XRD, UV-vis spectra, Fourier transform infrared spectroscopy, and thermogravimetric analysis. Moreover, magnetic measurements for compound 1 showed an obvious antiferromagnetic transition at ∼9 K. Our research not only enriches the structural chemistry of the transitional-metal/14/16 chalcogenides but also allows us to better understand the synergic effect of organic amines and surfactants on the crystallization of metal chalcogenides.

  16. Skyrmions and Novel Spin Textures in FeGe Thin Films and Artificial B20 Heterostructures

    Science.gov (United States)

    Ahmed, Adam Saied

    Skyrmions are magnetic spin textures that have a non-zero topological winding number associated with them. They have attracted much interest recently since they can be as small as 1 nm and could be the next generation of magnetic memory and logic. First, we grow epitaxial films of FeGe by molecular beam epitaxy and characterized the skyrmion properties. This had led us to image skyrmions in real-space with Lorentz transmission electron microscopy for the first time in the United States. Next, from an extensive series of thin and thick films, we have experimentally shown the existence of a magnetic surface state in FeGe and, consequently, any skyrmion material for the first time. Complementary theoretical calculations supported the existence of chiral bobbers--a surface state only predicted in 2015. Next, we fabricated for the first time a new class of skyrmion materials: B20 superlattices. These novel heterostructures of [FeGe/MnGe/CrGe] have now opened the door for tunable skyrmion systems with both Dresselhaus and Rashba Dzyaloshinskii-Moriya interactions. Additionally, we perform resonant soft x-ray scattering to image magnetic spin textures in reciprocal space for FeGe thin films in transmission. We have accomplished the removal of substrate and left an isolated single-crystal FeGe film. Lastly, SrO is grown on graphene as a crystalline, atomically smooth, and pinhole free tunnel barrier for spin injection.

  17. Quantifying protein adsorption and function at nanostructured materials: enzymatic activity of glucose oxidase at GLAD structured electrodes.

    Science.gov (United States)

    Jensen, Uffe B; Ferapontova, Elena E; Sutherland, Duncan S

    2012-07-31

    Nanostructured materials strongly modulate the behavior of adsorbed proteins; however, the characterization of such interactions is challenging. Here we present a novel method combining protein adsorption studies at nanostructured quartz crystal microbalance sensor surfaces (QCM-D) with optical (surface plasmon resonance SPR) and electrochemical methods (cyclic voltammetry CV) allowing quantification of both bound protein amount and activity. The redox enzyme glucose oxidase is studied as a model system to explore alterations in protein functional behavior caused by adsorption onto flat and nanostructured surfaces. This enzyme and such materials interactions are relevant for biosensor applications. Novel nanostructured gold electrode surfaces with controlled curvature were fabricated using colloidal lithography and glancing angle deposition (GLAD). The adsorption of enzyme to nanostructured interfaces was found to be significantly larger compared to flat interfaces even after normalization for the increased surface area, and no substantial desorption was observed within 24 h. A decreased enzymatic activity was observed over the same period of time, which indicates a slow conformational change of the adsorbed enzyme induced by the materials interface. Additionally, we make use of inherent localized surface plasmon resonances in these nanostructured materials to directly quantify the protein binding. We hereby demonstrate a QCM-D-based methodology to quantify protein binding at complex nanostructured materials. Our approach allows label free quantification of protein binding at nanostructured interfaces.

  18. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

    International Nuclear Information System (INIS)

    Bogumilowicz, Y.; Hartmann, J.M.

    2014-01-01

    We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

  19. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

    International Nuclear Information System (INIS)

    Lu, Yegang; Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang; Shen, Xiang; Wang, Guoxiang; Dai, Shixun

    2013-01-01

    Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

  20. Micro-/nanostructured multicomponent molecular materials: design, assembly, and functionality.

    Science.gov (United States)

    Yan, Dongpeng

    2015-03-23

    Molecule-based micro-/nanomaterials have attracted considerable attention because their properties can vary greatly from the corresponding macro-sized bulk systems. Recently, the construction of multicomponent molecular solids based on crystal engineering principles has emerged as a promising alternative way to develop micro-/nanomaterials. Unlike single-component materials, the resulting multicomponent systems offer the advantages of tunable composition, and adjustable molecular arrangement, and intermolecular interactions within their solid states. The study of these materials also supplies insight into how the crystal structure, molecular components, and micro-/nanoscale effects can influence the performance of molecular materials. In this review, we describe recent advances and current directions in the assembly and applications of crystalline multicomponent micro-/nanostructures. Firstly, the design strategies for multicomponent systems based on molecular recognition and crystal engineering principles are introduced. Attention is then focused on the methods of fabrication of low-dimensional multicomponent micro-/nanostructures. Their new applications are also outlined. Finally, we briefly discuss perspectives for the further development of these molecular crystalline micro-/nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    -dimensional quantum dot crystals. The analyzed SiGe quantum dots have a type II band alignment, with holes confined in the dots and electrons confined in the strained Si in the surrounding of the dots. The recombination energy of these indirect excitons depends on size, Ge content and strain distribution of the quantum dots. It is shown that the structural uniformity of the created quantum dot structures is reflected in their optical properties, resulting in a narrow and stable photoluminescence emission with well separated no-phonon and transversal optical phonon lines. The narrow dot luminescence can be shifted by varying Ge coverage, dot size or dot period. Furthermore excitation-power dependent and temperature dependent photoluminescence measurements are discussed. Band structure calculations indicate that the electronic states of the quantum dot crystals are electronically coupled at least in vertical direction. For the quantum dot crystal with a lateral period of 35 nm even a coupling in all three dimensions is calculated. Thus, the three-dimensional dot arrangement represents not only from the structural but also from the electronic point of view an artificial crystal. (orig.)

  2. Multiscale modelling of nanostructures

    International Nuclear Information System (INIS)

    Vvedensky, Dimitri D

    2004-01-01

    Most materials phenomena are manifestations of processes that are operative over a vast range of length and time scales. A complete understanding of the behaviour of materials thereby requires theoretical and computational tools that span the atomic-scale detail of first-principles methods and the more coarse-grained description provided by continuum equations. Recent efforts have focused on combining traditional methodologies-density functional theory, molecular dynamics, Monte Carlo methods and continuum descriptions-within a unified multiscale framework. This review covers the techniques that have been developed to model various aspects of materials behaviour with the ultimate aim of systematically coupling the atomistic to the continuum descriptions. The approaches described typically have been motivated by particular applications but can often be applied in wider contexts. The self-assembly of quantum dot ensembles will be used as a case study for the issues that arise and the methods used for all nanostructures. Although quantum dots can be obtained with all the standard growth methods and for a variety of material systems, their appearance is a quite selective process, involving the competition between equilibrium and kinetic effects, and the interplay between atomistic and long-range interactions. Most theoretical models have addressed particular aspects of the ordering kinetics of quantum dot ensembles, with far fewer attempts at a comprehensive synthesis of this inherently multiscale phenomenon. We conclude with an assessment of the current status of multiscale modelling strategies and highlight the main outstanding issues. (topical review)

  3. Photoresponsive nanostructured membranes

    KAUST Repository

    Madhavan, Poornima

    2016-07-26

    The perspective of adding stimuli-response to isoporous membranes stimulates the development of separation devices with pores, which would open or close under control of environment chemical composition, temperature or exposure to light. Changes in pH and temperature have been previously investigated. In this work, we demonstrate for the first time the preparation of photoresponsive isoporous membranes, applying self-assembly non-solvent induced phase separation to a new light responsive block copolymer. First, we optimized the membrane formation by using poly(styrene-b-anthracene methyl methacrylate-b-methylmethacrylate) (PS-b-PAnMMA-b-PMMA) copolymer, identifying the most suitable solvent, copolymer block length, and other parameters. The obtained final triblock copolymer membrane morphologies were characterized using atomic force and electron microscopy. The microscopic analysis reveals that the PS-b-PAnMMA-b-PMMA copolymer can form both lamellar and ordered hexagonal nanoporous structures on the membrane top layer in appropriate solvent compositions. The nanostructured membrane emits fluorescence due to the presence of the anthracene mid-block. On irradiation of light the PS-b-PAnMMA-b-PMMA copolymer membranes has an additional stimuli response. The anthracene group undergoes conformational changes by forming [4 + 4] cycloadducts and this alters the membrane\\'s water flux and solute retention. © 2016 The Royal Society of Chemistry.

  4. Nuclear spins in nanostructures

    International Nuclear Information System (INIS)

    Coish, W.A.; Baugh, J.

    2009-01-01

    We review recent theoretical and experimental advances toward understanding the effects of nuclear spins in confined nanostructures. These systems, which include quantum dots, defect centers, and molecular magnets, are particularly interesting for their importance in quantum information processing devices, which aim to coherently manipulate single electron spins with high precision. On one hand, interactions between confined electron spins and a nuclear-spin environment provide a decoherence source for the electron, and on the other, a strong effective magnetic field that can be used to execute local coherent rotations. A great deal of effort has been directed toward understanding the details of the relevant decoherence processes and to find new methods to manipulate the coupled electron-nuclear system. A sequence of spectacular new results have provided understanding of spin-bath decoherence, nuclear spin diffusion, and preparation of the nuclear state through dynamic polarization and more general manipulation of the nuclear-spin density matrix through ''state narrowing.'' These results demonstrate the richness of this physical system and promise many new mysteries for the future. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  5. Nanostructured Basaltfiberconcrete Exploitational Characteristics

    Science.gov (United States)

    Saraykina, K. A.; Shamanov, V. A.

    2017-11-01

    The article demonstrates that the mass use of basalt fiber concrete (BFC) is constrained by insufficient study of their durability and serviceability in a variety of environments. This research is aimed at the study of the basalt fiber corrosion processes in the cement stone of BFC, the control of the new products structure formation in order to protect the reinforcing fiber from alkaline destruction and thereby improve the exploitational characteristics of the composite. The research result revealed that the modification of basaltfiber concrete by the dispersion of MWNTs contributes to the directional formation of new products in the cement matrix. The HAM additive in basaltfiberconcrete provides for the binding of portlandite to low-basic calcium hydroaluminosilicates, thus reducing the aggressive effect of the cement environment on the reinforcing fibers properties. The complex modification of BFC with nanostructured additives provides for an increase in its durability and exploitational properties (strength, frost resistance and water resistance) due to basalt fiber protection from alkali corrosion on account of the compacting of the contact zone “basalt fiber - cement stone” and designing of the new products structure and morphology of cement matrix over the fiber surface.

  6. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys

    Science.gov (United States)

    Kalb, J.; Spaepen, F.; Wuttig, M.

    2004-06-01

    Ex situ atomic force microscopy in combination with a high-precision furnace has been employed for a systematic study of crystallization kinetics of sputtered amorphous Ag0.055In0.065Sb0.59Te0.29, Ge4Sb1Te5, and Ge2Sb2Te5 thin films used for optical data storage. Direct observation of crystals enabled us to establish the temperature dependence of the crystal nucleation rate and crystal growth velocity around 150°C. While these alloys exhibited similar crystal growth characteristics, the crystal nucleation behavior of Ag0.055In0.065Sb0.59Te0.29 differed significantly from that of Ge4Sb1Te5 and Ge2Sb2Te5. These observations provide an explanation for the different recrystallization mechanisms observed upon laser heating of amorphous marks.

  7. Nanostructured catalysts for organic transformations.

    Science.gov (United States)

    Chng, Leng Leng; Erathodiyil, Nandanan; Ying, Jackie Y

    2013-08-20

    The development of green, sustainable and economical chemical processes is one of the major challenges in chemistry. Besides the traditional need for efficient and selective catalytic reactions that will transform raw materials into valuable chemicals, pharmaceuticals and fuels, green chemistry also strives for waste reduction, atomic efficiency and high rates of catalyst recovery. Nanostructured materials are attractive candidates as heterogeneous catalysts for various organic transformations, especially because they meet the goals of green chemistry. Researchers have made significant advances in the synthesis of well-defined nanostructured materials in recent years. Among these are novel approaches that have permitted the rational design and synthesis of highly active and selective nanostructured catalysts by controlling the structure and composition of the active nanoparticles (NPs) and by manipulating the interaction between the catalytically active NP species and their support. The ease of isolation and separation of the heterogeneous catalysts from the desired organic product and the recovery and reuse of these NPs further enhance their attractiveness as green and sustainable catalysts. This Account reviews recent advances in the use of nanostructured materials for catalytic organic transformations. We present a broad overview of nanostructured catalysts used in different types of organic transformations including chemoselective oxidations and reductions, asymmetric hydrogenations, coupling reactions, C-H activations, oxidative aminations, domino and tandem reactions, and more. We focus on recent research efforts towards the development of the following nanostructured materials: (i) nanostructured catalysts with controlled morphologies, (ii) magnetic nanocomposites, (iii) semiconductor-metal nanocomposites, and (iv) hybrid nanostructured catalysts. Selected examples showcase principles of nanoparticle design such as the enhancement of reactivity, selectivity

  8. Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

    Science.gov (United States)

    Gu, Yifeng; Song, Sannian; Song, Zhitang; Bai, Suyuan; Cheng, Yan; Zhang, Zhonghua; Liu, Bo; Feng, Songlin

    2013-03-01

    Compared with Ge2Sb2Te5, Ge0.61Sb2Te has higher crystallization temperature (˜200.5 °C), larger crystallization activation energy (˜3.28 eV), and better data retention (˜120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb2Te material is a promising candidate for the trade-off between programming speed and data retention.

  9. Polarization Bremsstrahlung on Atoms, Plasmas, Nanostructures and Solids

    CERN Document Server

    Astapenko, Valeriy

    2013-01-01

    The book is devoted to the modern theory and experimental manifestation of Polarization Bremsstrahlung (PB) which arises due to scattering of charged particles from various targets: atoms, nanostructures (including atomic clusters, nanoparticle in dielectric matrix, fullerens, graphene-like two-dimensional atomic structure) and in condensed matter (monocrystals, polycrystals, partially ordered crystals and amorphous matter) The present book addresses mainly researchers interested in the radiative processes during the interaction between fast particles and matter. It also will be useful for post-graduate students specializing in radiation physics and related fields.

  10. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  11. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  12. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  13. Incommensurate and commensurate magnetic structures of the ternary germanide CeNiGe3

    International Nuclear Information System (INIS)

    Durivault, L; Bouree, F; Chevalier, B; Andre, G; Weill, F; Etourneau, J; Martinez-Samper, P; Rodrigo, J G; Suderow, H; Vieira, S

    2003-01-01

    The structural properties of CeNiGe 3 have been investigated via electron diffraction and neutron powder diffraction (NPD). This ternary germanide crystallizes in the orthorhombic SmNiGe 3 -type structure (Cmmm space group). Electrical resistivity, ac- and dc-magnetization measurements show that CeNiGe 3 orders antiferromagnetically below T N = 5.5(2) K and exclude the occurrence at low temperatures of a spin-glass state for CeNiGe 3 as previously reported. Specific heat measurements and NPD both reveal two magnetic transitions, observed at T N1 = 5.9(2) K and T N2 = 5.0(2) K. Between T N1 and T N2 , the Ce magnetic moments in CeNiGe 3 are ordered in a collinear antiferromagnetic structure associated with the k 1 = (100) wavevector and showing a relationship with the magnetic structure of the Ce 3 Ni 2 Ge 7 ternary germanide. Below T N2 , this k 1 = (100) commensurate magnetic structure coexists with an incommensurate helicoidal magnetic structure associated with k 2 = (00.409(1)1/2). This last magnetic structure is highly preponderant below T N2 (93(5)% in volume). At 1.5 K, the Ce atoms in CeNiGe 3 carry a reduced ordered magnetic moment (0.8(2) μ B ). This value, smaller than that obtained in Ce 3 Ni 2 Ge 7 , results from an important hybridization of the 4f(Ce) orbitals with those of the Ni and Ge ligands

  14. Multiple order reflections in crystal neutron monochromators

    International Nuclear Information System (INIS)

    Fulfaro, R.

    1976-01-01

    A study of the higher order reflections in neutron crystal monochromators was made in order to obtain, for the IEA single crystal spectrometer, the operation range of 1,0eV to 0,01eV. Two crystals were studied, an Al(III) near 1,0eV and a Ge(III) in lower energies. For the Ge(III) case the higher order contaminations in the reflected beam were determined using as standard the gold total neutron cross section and performing the crystal reflectivity calculation for several orders of reflection. The knowledge of the contamination for each order as a function of neutron wavelength allows the optimization of the filter thickness in order to avoid higher order neutrons. The Ge(III) crystal was used because its second order reflections are theoretically forbidden, giving an advantage on other crystals, since measurements can be made until 0.02eV directly without filters. In the energy range 0.02 to 0.01eV, order contaminations higher than the second are present, therefore, either quartz filters are employed or calculated corrections are applied to the experimental data. The Al(III) crystal was used in order to estimate the second order contamination effect, in the iridium resonance measurements, at E 0 = 0.654eV. In that region, approximations can be made and it was not necessary to make the crystal reflectivity calculation for the filters thickness optimization. Since only the second order affects the results in that region, tellurium was used for the filtration, because this element has a resonance in the range of neutrons with energy 4E [pt

  15. Nanostructure Neutron Converter Layer Development

    Science.gov (United States)

    Park, Cheol (Inventor); Sauti, Godfrey (Inventor); Kang, Jin Ho (Inventor); Lowther, Sharon E. (Inventor); Thibeault, Sheila A. (Inventor); Bryant, Robert G. (Inventor)

    2016-01-01

    Methods for making a neutron converter layer are provided. The various embodiment methods enable the formation of a single layer neutron converter material. The single layer neutron converter material formed according to the various embodiments may have a high neutron absorption cross section, tailored resistivity providing a good electric field penetration with submicron particles, and a high secondary electron emission coefficient. In an embodiment method a neutron converter layer may be formed by sequential supercritical fluid metallization of a porous nanostructure aerogel or polyimide film. In another embodiment method a neutron converter layer may be formed by simultaneous supercritical fluid metallization of a porous nanostructure aerogel or polyimide film. In a further embodiment method a neutron converter layer may be formed by in-situ metalized aerogel nanostructure development.

  16. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

  17. Interfacing nanostructures to biological cells

    Science.gov (United States)

    Chen, Xing; Bertozzi, Carolyn R.; Zettl, Alexander K.

    2012-09-04

    Disclosed herein are methods and materials by which nanostructures such as carbon nanotubes, nanorods, etc. are bound to lectins and/or polysaccharides and prepared for administration to cells. Also disclosed are complexes comprising glycosylated nanostructures, which bind selectively to cells expressing glycosylated surface molecules recognized by the lectin. Exemplified is a complex comprising a carbon nanotube functionalized with a lipid-like alkane, linked to a polymer bearing repeated .alpha.-N-acetylgalactosamine sugar groups. This complex is shown to selectively adhere to the surface of living cells, without toxicity. In the exemplified embodiment, adherence is mediated by a multivalent lectin, which binds both to the cells and the .alpha.-N-acetylgalactosamine groups on the nanostructure.

  18. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  19. Field renormalization in photonic crystal waveguides

    DEFF Research Database (Denmark)

    Colman, Pierre

    2015-01-01

    A novel strategy is introduced in order to include variations of the nonlinearity in the nonlinear Schro¨dinger equation. This technique, which relies on renormalization, is in particular well adapted to nanostructured optical systems where the nonlinearity exhibits large variations up to two...... Schro¨dinger equation is an occasion for physics-oriented considerations and unveils the potential of photonic crystal waveguides for the study of new nonlinear propagation phenomena....

  20. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation......: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots...... and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin...