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Sample records for crystalline-silicon solar cells

  1. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  2. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  3. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  4. Inexpensive transparent nanoelectrode for crystalline silicon solar cells.

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-12-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  5. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-06-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  6. Crystalline silicon solar cells with high resistivity emitter

    Science.gov (United States)

    Panek, P.; Drabczyk, K.; Zięba, P.

    2009-06-01

    The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

  7. Reduction Bending of Thin Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    SHEN Lan-xian; LIU Zu-ming; LIAO Hua; TU Jie-lei; DENG Shu-kang

    2009-01-01

    Reported are the results of reduction the bending of thin crystalline silicon solar ceils after printing and sintering of back electrode by changing the back electrode paste and adjusting the screen printing parameters without effecting the electrical properties of the cell. Theory and experiments showed that the bending of the cell is changed with its thickness of suhstrate, the thinner cell, the more serious bending. The bending of the cell is decreased with the thickness decrease of the back contact paste. The substrate with the thickness of 190μm printing with sheet aluminum paste shows a relatively lower bend compared with that of the substrate printing with ordinary aluminum paste, and the minimum bend is 0.55 mm which is reduced by52%.

  8. Novel Scheme of Amorphous/Crystalline Silicon Heterojunction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, Petten (Netherlands); Tucci, M.; Serenelli, L.; Salza, E. [ENEA Research Center Casaccia, Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M. [University ' Sapienza' , Department of Electronic Engineering, Roma (Italy)

    2007-01-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern, and we show that the alignment is feasible. An open-circuit voltage of 687 mV has been measured on a p-type monocrystalline silicon wafer. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Photocurrent limits factor has been investigated with the aid of one-dimensional modeling and quantum efficiency measurements. On the other hand several technological aspects that limit the fill factor and the short circuit current density still need improvements.

  9. High-flux solar furnace processing of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Menna, P. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[ENEA-Centro Ricerche Fotovoltaiche, Portici 80055 (Italy); Landry, M.D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Gee, J.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ciszek, T.F. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1{percent}-efficient crystalline-silicon solar cell with an area of 4.6cm{sup 2} was fabricated using the HFSF for simultaneous diffusion of front n{sup +}-p and back p-p{sup +} junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell. {copyright} {ital 1997 American Institute of Physics.}

  10. High-flux solar furnace processing of crystalline silicon solar cells

    Science.gov (United States)

    Tsuo, Y. S.; Pitts, J. R.; Menna, P.; Landry, M. D.; Gee, J. M.; Ciszek, T. F.

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1%-efficient crystalline-silicon solar cell with an area of 4.6 cm2 was fabricated using the HFSF for simultaneous diffusion of front n+-p and back p-p+ junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell.

  11. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    DEFF Research Database (Denmark)

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  12. Novel Ag-doped glass frits for high-efficiency crystalline silicon solar cells.

    Science.gov (United States)

    Yuan, Sheng; Chen, Yongji; Mei, Zongwei; Zhang, Ming-Jian; Gao, Zhou; Wang, Xingbo; Jiang, Xing; Pan, Feng

    2017-06-06

    Glass frits play an important role in the front contact electrodes of crystalline silicon (c-Si) solar cells. In this work, we developed a novel glass frit by doping Ag into a glass frit in the process of high-temperature synthesis. When the Ag paste including this novel glass frit was used as the front contact electrode of silicon solar cells, the conversion efficiency of poly-crystalline silicon (pc-Si) solar cells was improved by 1.9% compared to the glass frit without Ag. Through SEM characterisation and calculation of series resistance, we further found that the interface between Ag and Si was improved and the contact resistance of Ag and Si was greatly reduced, which were believed to be responsible for the improvement of solar cell performance. This work shows great guidance significance to develop novel and highly efficient commercial glass frits applied in solar cells in the future.

  13. Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yusi Chen

    2017-01-01

    Full Text Available Nanostructures have been widely used in solar cells due to their extraordinary photon management properties. However, due to poor pn junction quality and high surface recombination velocity, typical nanostructured solar cells are not efficient compared with the traditional commercial solar cells. Here, we demonstrate a new approach to design, simulate, and fabricate whole-wafer nanostructures on dielectric layer on thin c-Si for solar cell light trapping. The optical simulation results show that the periodic nanostructure arrays on dielectric materials could suppress the reflection loss over a wide spectral range. In addition, by applying the nanostructured dielectric layer on 40 μm thin c-Si, the reflection loss is suppressed to below 5% over a wide spectra and angular range. Moreover, a c-Si solar cell with 2.9 μm ultrathin absorber layer demonstrates 32% improvement in short circuit current and 44% relative improvement in energy conversion efficiency. Our results suggest that nanostructured dielectric layer has the potential to significantly improve solar cell performance and avoid typical problems of defects and surface recombination for nanostructured solar cells, thus providing a new pathway towards realizing high-efficiency and low-cost c-Si solar cells.

  14. Single crystalline silicon solar cells with rib structure

    Science.gov (United States)

    Yoshiba, Shuhei; Hirai, Masakazu; Abe, Yusuke; Konagai, Makoto; Ichikawa, Yukimi

    2017-02-01

    To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer's strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC) could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  15. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  16. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    Science.gov (United States)

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-02

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  17. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  18. International round-robin inter-comparison of dye-sensitized and crystalline silicon solar cells

    Science.gov (United States)

    Chen, Chia-Yuan; Ahn, Seung Kyu; Aoki, Dasiuke; Kokubo, Junichi; Yoon, Kyung Hoon; Saito, Hidenori; Lee, Kyung Sik; Magaino, Shinichi; Takagi, Katsuhiko; Lin, Ling-Chuan; Lee, Kun-Mu; Wu, Chun-Guey; Zhou, Hong; Igari, Sanekazu

    2017-02-01

    An international round-robin inter-comparison of the spectral responsivity (SR) and current-voltage (I-V) characteristics for dye-sensitized solar cells (DSCs) and crystalline silicon solar cells is reported for the first time. The crystalline silicon cells with various spectral responsivities were also calibrated by AIST to validate this round-robin activity. On the basis of the remarkable consistency in Pmax (within ±1.4% among participants) and Isc (within ±1.2% compared to the primary calibration of AIST) of the silicon specimens, the discrepancy in the SR and photovoltaic parameters of five DSCs among three national laboratories can be verified and diagnosed. Recommendations about sample packages, SR and I-V measurement methods as well as the inter-comparison protocol for improving the performance characterization of the mesoscopic DSCs are presented according to the consolidated data and the experience of the participants.

  19. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2013-01-01

    Full Text Available The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  20. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  1. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

  2. Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Su Zhou

    2013-01-01

    Full Text Available The application of Czochralski (Cz monocrystalline silicon material in solar cells is limited by its high cost and serious light-induced degradation. The use of cast multicrystalline silicon is also hindered by its high dislocation densities and high surface reflectance after texturing. Mono-like crystalline silicon is a promising material because it has the advantages of both mono- and multicrystalline silicon. However, when mono-like wafers are made into cells, the efficiencies of a batch of wafers often fluctuate within a wide range of >1% (absolute. In this work, mono-like wafers are classified by a simple process and fabricated into laser doping selective emitter cells. The effect and mechanism of subgrains on the performance of mono-like crystalline silicon solar cells are studied. The results show that the efficiency of mono-like crystalline silicon solar cells significantly depends on material defects that appear as subgrains on an alkaline textured surface. These subgrains have an almost negligible effect on the optical performance, shunt resistance, and junction recombination but significantly affect the minority carrier diffusion length and quantum efficiency within a long wavelength range. Finally, an average efficiency of 18.2% is achieved on wafers with hardly any subgrain but with a small-grain band.

  3. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  4. IR characterization of hydrogen in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stavola, M., E-mail: michael.stavola@Lehigh.ed [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Kleekajai, S.; Wen, L.; Peng, C. [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Yelundur, V.; Rohatgi, A. [School of Electrical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Carnel, L. [REC Wafer AS, NO-3908 Porsgrunn (Norway); Kalejs, J. [American Capital Energy, N. Chelmsford, MA 01863 (United States)

    2009-12-15

    Hydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. A process that is widely used by industry to introduce hydrogen is by the post-deposition annealing of a hydrogen-rich SiN{sub x} layer that is used as an anti-reflection coating. A number of questions about this hydrogen introduction process and hydrogen's subsequent interactions with defects have proved difficult to address because of the low concentration of hydrogen that is introduced into the Si bulk. We have used the fundamental knowledge of hydrogenated defects that has been revealed by recent investigations of impurity-H complexes to develop strategies by which hydrogen in silicon can be detected by IR spectroscopy with high sensitivity. The introduction of hydrogen into Si by the post-deposition annealing of a SiN{sub x} coating has been investigated.

  5. Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, Isao; Yamanaka, Mitsuyuki; Kawanami, Hitoshi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, AIST Central-2, Tsukuba, Ibaraki 305-8568 (Japan)

    2009-06-15

    Internal photoemission (IPE) has been successfully applied to evaluate band offsets of heterojunctions (HJs) in crystalline silicon (c-Si)-based solar cells. Tunneling of carriers through the potential spike at HJ and the presence of a carrier conduction path in the wide-band-gap material of HJ can affect the IPE results. In other words, IPE measures the effective band discontinuity, including effects of the carrier conduction path. This feature of IPE is suited for the characterization of solar-cell structures. Results obtained for hydrogenated amorphous silicon/c-Si HJ and gallium phosphide/c-Si HJ are presented and discussed. (author)

  6. Design and optimization of ultrathin crystalline silicon solar cells using an efficient back reflector

    Directory of Open Access Journals (Sweden)

    S. Saravanan

    2015-05-01

    Full Text Available Thin film solar cells are cheaper but having low absorption in longer wavelength and hence, an effective light trapping mechanism is essential. In this work, we proposed an ultrathin crystalline silicon solar cell which showed extraordinary performance due to enhanced light absorption in visible and infrared part of solar spectrum. Various designing parameters such as number of distributed Bragg reflector (DBR pairs, anti-reflection layer thickness, grating thickness, active layer thickness, grating duty cycle and period were optimized for the optimal performance of solar cell. An ultrathin silicon solar cell with 40 nm active layer could produce an enhancement in cell efficiency ∼15 % and current density ∼23 mA/cm2. This design approach would be useful for the realization of new generation of solar cells with reduced active layer thickness.

  7. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Science.gov (United States)

    John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

    2012-08-01

    Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  8. Influence of porous silicon formation on the performance of multi-crystalline silicon solar cells

    Indian Academy of Sciences (India)

    M Saad; M Naddaf

    2015-06-01

    The effect of formation of porous silicon on the performance of multi-crystalline silicon (mc-Si) solar cells is presented. Surface treatment of mc-Si solar cells was performed by electrochemical etching in HF-based solution. The effect of etching is viewed through scanning electron microscope (SEM) photographs that indicated the formation of a porous layer on the surface. Total reflection spectroscopy measurements on solar cells revealed reduced reflection after etching. In order to demonstrate the effect of this porous layer on the solar cell performance, illumination-dependent – characteristics and spectral response measurements were performed and analysed before and after etching. At all illumination intensities, short-circuit current density and open-circuit voltage values for the etched solar cell were higher than those before etching, whereas fill factor values were lower for the etched cell at high illumination intensities. An interpretation of these findings is presented.

  9. Impact of temperature on performance of series and parallel connected mono-crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2015-11-01

    Full Text Available This paper presents a study on impact of temperature on the performance of series and parallel connected mono-crystalline silicon (mono-Si solar cell employing solar simulator. The experiment was carried out at constant light intensity 550 W/m2with cell temperature in the range 25–60 oC for single, series and parallel connected mono-Si solar cells. The performance parameters like open circuit voltage, maximum power, fill factor and efficiency are found to decrease with cell temperature while the short circuit current is observed to increase. The experimental results reveal that silicon solar cells connected in series and parallel combinations follow the Kirchhoff’s laws and the temperature has a significant effect on the performance parameters of solar cell.

  10. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    Directory of Open Access Journals (Sweden)

    L. Shen

    2014-02-01

    Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  11. Sprayed and Spin-Coated Multilayer Antireflection Coating Films for Nonvacuum Processed Crystalline Silicon Solar Cells

    OpenAIRE

    Abdullah Uzum; Masashi Kuriyama; Hiroyuki Kanda; Yutaka Kimura; Kenji Tanimoto; Hidehito Fukui; Taichiro Izumi; Tomitaro Harada; Seigo Ito

    2017-01-01

    Using the simple and cost-effective methods, spin-coated ZrO2-polymer composite/spray-deposited TiO2-compact multilayer antireflection coating film was introduced. With a single TiO2-compact film on the surface of a crystalline silicon wafer, 5.3% average reflectance (the reflectance average between the wavelengths of 300 nm and 1100 nm) was observed. Reflectance decreased further down to 3.3% after forming spin-coated ZrO2 on the spray-deposited TiO2-compact film. Silicon solar cells were fa...

  12. Microsystems enabled photovoltaics: 14.9% efficient 14 {mu}m thick crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Campa, Jose L. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States); Okandan, Murat; Resnick, Paul J.; Clews, Peggy; Pluym, Tammy; Grubbs, Robert K.; Gupta, Vipin P.; Nielson, Gregory N. [Sandia National Laboratories, M.S. 1080, 1515 Eubank Blvd. SE, Albuquerque, NM 87123 (United States); Zubia, David [University of Texas at El Paso, Department of Electrical and Computer Engineering, 500 West University Avenue, El Paso, TX 79968 (United States)

    2011-02-15

    Crystalline silicon solar cells 10-15 times thinner than traditional commercial c-Si cells with 14.9% efficiency are presented with modeling, fabrication, and testing details. These cells are 14 {mu}m thick, 250 {mu}m wide, and have achieved 14.9% solar conversion efficiency under AM 1.5 spectrum. First, modeling results illustrate the importance of high-quality passivation to achieve high efficiency in thin silicon, back contacted solar cells. Then, the methodology used to fabricate these ultra thin devices by means of established microsystems processing technologies is presented. Finally, the optimization procedure to achieve high efficiency as well as the results of the experiments carried out with alumina and nitride layers as passivation coatings are discussed. (author)

  13. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  14. Dual interface gratings design for absorption enhancement in thin crystalline silicon solar cells

    Science.gov (United States)

    Zhang, Jinqiannan; Yu, Zhongyuan; Liu, Yumin; Chai, Hongyu; Hao, Jing; Ye, Han

    2017-09-01

    We numerically study and analyze the light absorption enhancement in thin crystalline silicon solar cell with dual interface gratings. The structure combines the front dielectric nanowalls and the sinusoidal plasmonic grating at back reflector. We show that having specific interfaces with well-chosen period, fill factor and height can allow more efficient dielectric and plasmonic modes coupling into active layer and can improve the solar cell performance. For 1 μm active layer case, the optimal result for the proposed structure achieves short-circuit current of 23.6 mA/cm2, which performs over 50% better than flat solar cell structure, the short-circuit current of which is 15.5 mA/cm2. In addition, the active layer thickness and angular analysis show that the proposed structure maintains its advantage over flat structure.

  15. Incoherent-light processing of single- and poly-crystalline silicon solar cells

    Science.gov (United States)

    Nielsen, L. D.; Larsen, A. N.

    Transient heating with incoherent continuous light from a xenon arc-lamp has been studied as a possible process step in the production of single- and poly-crystalline silicon solar cells. Annealing of phosphorus and arsenic ion implantations have been made, with phosphorus implantations leading to solar cell efficiences of 8.3 and 5.8 percent for 100 single crystal and Wacker-SILSO materials, respectively, both without AR-coating. Furthermore, incoherent-light induced diffusion of phosphorus from spin-on deposited doped oxide layer has been studied and has resulted in efficiencies of 7.9 and 6.6 percent, respectively, for the same two types of material. This latter process is concluded to be a promising technique for production of low-cost silicon solar cells with efficiencies of at least 10 percent without any vacuum or high-temperature furnace process steps.

  16. Summary of the 4th Workshop on Metallization for Crystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Beaucarne, G. [Dow Corning, Parc Industriel, Zone C, Rue Jules Bordet, 7180 Seneffe (Belgium); Schubert, G. [Sunways AG, Macairestrasse 3 - 5, D - 78467 Konstanz (Germany); Hoornstra, J. [Energy research Centre of the Netherlands ECN, POBox 1, 1755 ZG Petten (Netherlands)

    2013-07-01

    The 4th Metallization Workshop held in May 2013 in Constance, Germany, enabled experts in metallization for crystalline silicon solar cells to obtain a clear view on the status of the technology, as well as to exchange and generate new ideas and insights. From the contributions on the workshop, it was clear that the traditional metallization technique of screenprinting Ag paste has been improved in a dramatic way over the last two years, accelerating the decrease of Ag consumption per cell while improving solar cell efficiency. This was achieved through enhanced understanding of screenprinted contacts, improving Ag pastes and evolutionary modifications to the screenprinting technique. Alternatives to screenprinting, including electroplating of Ni and Cu contacts, also continue to progress, though not quite at the same impressive rate of improvement as Ag printing.

  17. An overview of crystalline silicon solar cell technology: Past, present, and future

    Science.gov (United States)

    Sopian, K.; Cheow, S. L.; Zaidi, S. H.

    2017-09-01

    Crystalline silicon (c-Si) solar cell, ever since its inception, has been identified as the only economically and environmentally sustainable renewable resource to replace fossil fuels. Performance c-Si based photovoltaic (PV) technology has been equal to the task. Its price has been reduced by a factor of 250 over last twenty years (from ˜ 76 USD to ˜ 0.3 USD); its market growth is expected to reach 100 GWP by 2020. Unfortunately, it is still 3-4 times higher than carbon-based fuels. With the matured PV manufacturing technology as it exists today, continuing price reduction poses stiff challenges. Alternate manufacturing approaches in combination with thin wafers, low (cost-based analysis of advanced solar cell manufacturing technologies aimed at higher (˜ 22 %) efficiency with existing equipment and processes.

  18. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  19. Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells.

    Science.gov (United States)

    Löper, Philipp; Moon, Soo-Jin; de Nicolas, Sílvia Martín; Niesen, Bjoern; Ledinsky, Martin; Nicolay, Sylvain; Bailat, Julien; Yum, Jun-Ho; De Wolf, Stefaan; Ballif, Christophe

    2015-01-21

    Tandem solar cells constructed from a crystalline silicon (c-Si) bottom cell and a low-cost top cell offer a promising way to ensure long-term price reductions of photovoltaic modules. We present a four-terminal tandem solar cell consisting of a methyl ammonium lead triiodide (CH3NH3PbI3) top cell and a c-Si heterojunction bottom cell. The CH3NH3PbI3 top cell exhibits broad-band transparency owing to its design free of metallic components and yields a transmittance of >55% in the near-infrared spectral region. This allows the generation of a short-circuit current density of 13.7 mA cm(-2) in the bottom cell. The four-terminal tandem solar cell yields an efficiency of 13.4% (top cell: 6.2%, bottom cell: 7.2%), which is a gain of 1.8%abs with respect to the reference single-junction CH3NH3PbI3 solar cell with metal back contact. We employ the four-terminal tandem solar cell for a detailed investigation of the optical losses and to derive guidelines for further efficiency improvements. Based on a power loss analysis, we estimate that tandem efficiencies of ∼28% are attainable using an optically optimized system based on current technology, whereas a fully optimized, ultimate device with matched current could yield up to 31.6%.

  20. Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells.

    Science.gov (United States)

    Zhang, Y; Jia, B; Gu, M

    2016-03-21

    Designing effective light-trapping structures for the insufficiently absorbed long-wavelength light in ultrathin silicon solar cells represents a key challenge to achieve low cost and highly efficient solar cells. We propose a hybrid structure based on the biomimetic silicon moth-eye structure combined with Ag nanoparticles to achieve advanced light trapping in 2 μm thick crystalline silicon solar cells approaching the Yablonovitch limit. By synergistically using the Mie resonances of the silicon moth-eye structure and the plasmonic resonances of the Ag nanoparticles, the integrated absorption enhancement achieved across the usable solar spectrum is 69% compared with the cells with the conventional light trapping design. This is significantly larger than both the silicon moth-eye structure (58%) and Ag nanoparticle (41%) individual light trapping. The generated photocurrent in the 2 μm thick silicon layer is as large as 33.4 mA/cm2, which is equivalent to that generated by a 30 μm single-pass absorption in the silicon. The research paves the way for designing highly efficient light trapping structures in ultrathin silicon solar cells.

  1. DLTS properties of iron defects in crystalline silicon used in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hamadeh, H. [Department of Physics, Atomic Energy Commission of Syria, Solar Cell Group, P.O. Box 6091, Damascus (Syrian Arab Republic)]. E-mail: hhamadeh@aecs.org.sy; Darwich, R. [Department of Physics, Atomic Energy Commission of Syria, Solar Cell Group, P.O. Box 6091, Damascus (Syrian Arab Republic)

    2004-10-25

    Crystalline silicon used in solar cells has been investigated using deep level transient spectroscopy (DLTS). In majority-carrier pulse sequence an interstitial iron deep level was observed. However, the investigation of this deep level peak with different filling pulsewidths shows that this level consists of two superimposed levels. The activation energies of these levels are 375 meV (F{sub 1}) and 480 meV (F{sub 2}). The capture cross section of the level (F{sub 1}) with the lower activation energy is nearly two orders of magnitude larger than the capture cross section of defect F{sub 2}. Both capture cross sections show, over a wide range, no temperature dependence indicating that nonradiative recombination mechanisms other than multiphonon emission are involved. The concentration ratio between both defects is nearly 1:2.

  2. A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

    KAUST Repository

    Allen, Thomas G.

    2017-02-04

    Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

  3. Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

    Science.gov (United States)

    Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

    2013-05-06

    Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

  4. Study on the SiN_x/Al rear reflectance performance of crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The performance of internal rear surface reflectance of crystalline silicon solar cells is becoming more and more important with the decrease of thickness of the silicon wafers. In this paper PC1D was used to simulate the correlations between the rear surface reflectance and the electrical as well as optical properties of the solar cells. The results showed that the short circuit current, open circuit voltage and quantum efficiency were all enhanced with the increase of the rear reflectance. When the rear reflectance increased from 60% to 100%, the short circuit current, open circuit voltage and maximum output power were improved by about 0.128 A, 0.007 V, and 0.066 W, respectively. The internal quantum efficiency was improved by 39.9%, the external quantum increased by 17.4%, and the efficiency of the solar cells was enhanced by 0.4% at 1100 nm wavelength. The screen-printing was selected to prepare SiNx/Al reflector, and experimental results showed that the SiNx/Al reflector has desired characteristic of internal rear reflectance, with the reflectivity of 15% higher than that of conventional aluminum BSF at 1100 nm wavelength.

  5. Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

    Directory of Open Access Journals (Sweden)

    Ching-Tao Li

    2014-01-01

    Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

  6. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  7. Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

    Science.gov (United States)

    Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

    Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

  8. Optimization of textured-dielectric coatings for crystalline-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States). Photovoltaic System Components Dept.; Gordon, R.; Liang, H. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1996-07-01

    The authors report on the optimization of textured-dielectric coatings for reflectance control in crystalline-silicon (c-Si) photovoltaic modules. Textured-dielectric coatings reduce encapsulated-cell reflectance by promoting optical confinement in the module encapsulation; i.e., the textured-dielectric coating randomizes the direction of rays reflected from the dielectric and from the c-Si cell so that many of these reflected rays experience total internal reflection at the glass-air interface. Some important results of this work include the following: the authors demonstrated textured-dielectric coatings (ZnO) deposited by a high-throughput low-cost deposition process; they identified factors important for achieving necessary texture dimensions; they achieved solar-weighted extrinsic reflectances as low as 6% for encapsulated c-Si wafers with optimized textured-ZnO coatings; and they demonstrated improvements in encapsulated cell performance of up to 0.5% absolute compared to encapsulated planar cells with single-layer antireflection coatings.

  9. Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Schuettauf, J.W.A.; Van der Werf, C.H.M.; Kielen, I.M.; Van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics, Physics of Devices, Princetonplein 5, 3584 CC Utrecht (Netherlands)

    2012-09-15

    The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N{sub 2} ambient at temperatures between 150C and 300C in incremental steps of 15C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255C and 270C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10{sup 15} cm{sup -3} has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the 'standard' processing sequence.

  10. Sprayed and Spin-Coated Multilayer Antireflection Coating Films for Nonvacuum Processed Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdullah Uzum

    2017-01-01

    Full Text Available Using the simple and cost-effective methods, spin-coated ZrO2-polymer composite/spray-deposited TiO2-compact multilayer antireflection coating film was introduced. With a single TiO2-compact film on the surface of a crystalline silicon wafer, 5.3% average reflectance (the reflectance average between the wavelengths of 300 nm and 1100 nm was observed. Reflectance decreased further down to 3.3% after forming spin-coated ZrO2 on the spray-deposited TiO2-compact film. Silicon solar cells were fabricated using CZ-Si p-type wafers in three sets: (1 without antireflection coating (ARC layer, (2 with TiO2-compact ARC film, and (3 with ZrO2-polymer composite/TiO2-compact multilayer ARC film. Conversion efficiency of the cells improved by a factor of 0.8% (from 15.19% to 15.88% owing to the multilayer ARC. Jsc was improved further by 2 mA cm−2 (from 35.3 mA cm−2 to 37.2 mA cm−2 when compared with a single TiO2-compact ARC.

  11. Impact of dopant concentrations on emitter formation with spin on dopant source in n-type crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Singha, Bandana; Solanki, Chetan Singh [Department of Energy Science and Technology, Indian Institute of Technology, Bombay Mumbai-400076, Maharashtra (India)

    2016-05-06

    Use of a suitable dopant source for emitter formation is an essential requirement in n-type crystalline silicon solar cells. Boron spin on dopant source, used as alternative to mostly used BBr{sub 3} liquid source, can yield an emitter with less diffusion induced defects under controlled conditions. Different concentrations of commercially available spin on dopant source is used and optimized in this work for sheet resistance values of the emitter ranging from 30 Ω/□ to 70 Ω/□ with emitter doping concentrations suitable for ohmic contacts. The dopant concentrations diluted with different ratios improves the carrier lifetime and thus improves the emitter performance. Hence use of suitable dopant source is essential in forming emitters in n-type crystalline silicon solar cells.

  12. Crystalline silicon thin-film solar cells. Final report; Duennschicht-Solarzellen aus kristallinem Silizium. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Raeuber, A.; Wettling, W.; Eyer, A.; Faller, F.; Hebling, C.; Hurrle, A.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Reber, S.; Schetter, C.; Schillinger, N.; Schindler, R.; Schumacher, J.O.; Warta, W.

    1998-09-01

    Activities under the project covered all the processes involved in the fabrication of a crystalline silicon thin-film solar cell applying the high-temperature method, so that R and D work was carried out from testing of materials suitable for the dielectric and semiconductive layers required, development of the process sequences for fabrication of the solar cells, simulation and optimisation of the cell design through to final characterisation of the thin films and solar cells. Several cell designs were tested in parallel for intercomparison. Several high-temperature resistant materials were tested for their suitability to serve as substrate materials.The final project report presents the basic research work and studies on the physical and technological aspects of the crystalline thin-film solar cell as well as the major results of specific development work. The report shows that significant progress could be achieved. The efficiencies of all solar cell designs developed under the project are between 9 and 11%, including those using substrate materials easily available in industry, and it could be demonstrated that the solar cells are equal in potential to the wafer-based silicon cell. (orig./CB) [Deutsch] Es wurden alle wesentlichen Teilprozesse, die fuer die Entwicklung einer kristallinen Silicium Duennschicht-Solarzelle nach dem Hochtemperaturverfahren wichtig sind, bearbeitet. Der Projektrahmen reichte von der Materialentwicklung fuer die dielektrischen und halbleitenden Schichten ueber die Entwicklung der Solarzellenprozessschritte, die Simulation und Optimierung des Zellendesigns bis zur Charakterisierung von Schichten und Solarzellen. Dabei wurden mehrere verschiedene Zellentypen parallel untersucht und miteinander verglichen. In einer Studie wurden verschiedene hochtemperaturfeste Materialien auf ihre Eignung als Substrate hin untersucht. In dem hier vorgelegten Abschlussbericht werden die erarbeiteten Grundlagen zur Physik und Technologie der kristallinen

  13. Advanced Front-Side Technology in Crystalline Silicon Solar Cells (Geavanceerde Frontend-Side Technolgy in kristallijn silicium zonnecellen)

    OpenAIRE

    2013-01-01

    The goal of this thesis is to improve the efficiency of silicon solar cells such that the cost/watt could be reduced to a competitive level. In this thesis, three aspects of the front-side of crystalline silicon solar cells have been investigated. Advanced texturing, emitter formation and passivation are detailed in chapters 2, 3 and 4 respectively. Below, each chapter is summarized. In chapter 2, a new technique has been developed that textures the frontside while polishing the rear-side. Th...

  14. Operando XPS Characterization of Selective Contacts: The Case of Molybdenum Oxide for Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Laura; Harvey, Stephen P.; Teeter, Glenn; Bertoni, Mariana I.

    2016-11-21

    We demonstrate the potential of X-ray photoelectron spectroscopy (XPS) to characterize new carrier-selective contacts (CSC) for solar cell application. We show that XPS not only provides information about the surface chemical properties of the CSC material, but that operando XPS, i.e. under light bias condition, can also directly measure the photovoltage that develops at the CSC/absorber interface, revealing device relevant information without the need of assembling a full solar cell. We present the application of the technique to molybdenum oxide hole-selective contact films on a crystalline silicon absorber.

  15. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu [Arizona State Univ., Mesa, AZ (United States); Holman, Zachary [Arizona State Univ., Mesa, AZ (United States)

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  16. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  17. Ink jet printable silver metallization with zinc oxide for front side metallization for micro crystalline silicon solar cells

    Science.gov (United States)

    Jurk, Robert; Fritsch, Marco; Eberstein, Markus; Schilm, Jochen; Uhlig, Florian; Waltinger, Andreas; Michaelis, Alexander

    2015-12-01

    Ink jet printable water based inks are prepared by a new silver nanoparticle synthesis and the addition of nanoscaled ZnO particles. For the formation of front side contacts the inks are ink jet printed on the front side of micro crystalline silicon solar cells, and contact the cell directly during the firing step by etching through the wafers’ anti-reflection coating (ARC). In terms of Ag dissolution and precipitation the mechanism of contact formation can be compared to commercial glass containing thick film pastes. This avoids additional processing steps, like laser ablation, which are usually necessary to open the ARC prior to ink jet printing. As a consequence process costs can be reduced. In order to optimize the ARC etching and contact formation during firing, zinc oxide nanoparticles are investigated as an ink additive. By utilization of in situ contact resistivity measurements the mechanism of contacting was explored. Our results show that silver inks containing ZnO particles realize a specific contact resistance below 10 mΩṡcm2. By using a multi-pass ink jet printing and plating process a front side metallization of commercial 6  ×  6 inch2 standard micro crystalline silicone solar cells with emitter resistance of 60 Ω/◽ was achieved and showed an efficiency of 15.7%.

  18. Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.

    2007-11-01

    This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

  19. Simplified module assembly using back-contact crystalline-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Garrett, S.E.; Morgan, W.P.

    1997-11-01

    The authors are developing new module concepts that encapsulate and electrically connect all the crystalline-silicon (c-Si) photovoltaic (PV) cells in a module in a single step. The new assembly process (1) uses back-contact c-Si cells, (2) uses a module backplane that has both the electrical circuit, encapsulant, and backsheet in a single piece, and (3) uses a single-step process for assembly of these components into a module. This new process reduces module assembly cost by using planar processes that are easy to automate, by reducing the number of steps, and by eliminating low-throughput (e.g., individual cell tabbing, cell stringing, etc.) steps. The authors refer to this process as monolithic module assembly since it translates many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Preliminary development of the new module assembly process, and some estimations of the cost potential of the new process, are presented.

  20. Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Meng, Fanying; Shi, Jianhua; Shen, Leilei; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Yu, Jian; Bao, Jian; Liu, Zhengxin

    2017-04-01

    Three different dopant indium oxide thin films were fabricated at low temperatures by reactive plasma deposition and sputtering. The optical and electrical characteristics of these films were analyzed as a function of the Hall electron concentration. Furthermore, these films were applied to amorphous/crystalline silicon heterojunction solar cells as transparent electrodes. Consequently, it was demonstrated that the high Hall mobility, high refractive index, and low extinction coefficient of transparent conductive oxide (TCO) films contribute to the high product of short-circuit current density and fill factor and conversion efficiency. Furthermore, it was found that the solar cell with a finger spacing of 1.9 mm on a 125 × 125 mm2 Si wafer is highly tolerant to TCO film resistivity when the electron concentration is less than 4.0 × 1020 cm-3.

  1. Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)

    2016-08-15

    Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  3. Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells

    CERN Document Server

    Herman, Aline; Depauw, Valerie; Daif, Ounsi El; Deparis, Olivier

    2012-01-01

    Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order to encompass a large variety of nanopattern shapes and to study their influence on the photonic performance. We prove that the enhancement in the maximum achievable photo-current is due to both impedance matching condition at short wavelengths and to the wave nature of light at longer wavelengths. We show that the optimal mathematical shape and parameters of the pattern depend on the c Si thickness. An optimal shape comes with a broad optimal parameter zone where fabricating errors would have much less influence on the efficiency. We prove that cylinders are not the best suited shape. To compare our model with a real slab, we fabricated a nanopatterned c Si slab via Nano Imprint Lithography.

  4. Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells.

    Science.gov (United States)

    Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

    2012-04-01

    Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation.

  5. A Multi-Criterion Analysis of Cross-Strait Co-Opetitive Strategy in the Crystalline Silicon Solar Cell Industry

    Directory of Open Access Journals (Sweden)

    Hsiao-Chi Chen

    2014-01-01

    Full Text Available The research adopts multi-criterion analysis to face cross-strait cooperative and competitive (co-opetitive strategies problem in the crystalline silicon solar cell industry between Taiwan and China. The analysis framework is based on the national competitiveness. The Analytical Hierarchy Process (AHP approach and TOPSIS analysis are applied to analyze firm-level data, gathered from the solar cell companies across the Taiwan Strait. For the Taiwanese firms, their relative national competitiveness lies in technology development, domestic market, international competition in related industries, and subsidy policy. For the Chinese firms, domestic market, procurement conditions, customization, intellectual resources, risk capital, and human quality are found to be their competitive advantages. Both China and Taiwan have entered into the emerging solar cell industry, with an aim to climb beyond the ladder of catch up. The results have shown that Taiwan and China can explore the possibility of forging strategic alliances by exploiting national competitiveness on the demand side. Above all, the paper has managed to spotlight demand conditions as the crucial factors for China and Taiwan to enhance their international competitiveness in the emerging solar cell industry.

  6. Single-Crystalline Silicon Solar Cell with Selective Emitter Formed by Screen Printing and Chemical Etching Method: A Feasibility Study

    Directory of Open Access Journals (Sweden)

    Yen-Po Chen

    2013-01-01

    Full Text Available A new method for fabricating crystalline silicon solar cells with selective emitters is presented. In this method, shallow trenches corresponding to metal contact area are first formed by screen printing and chemical etching, followed by heavy doping over the whole front surface of the silicon wafer. After a polymer mask is pasted by aligned screen-printing to cover the shallow trenches, the silicon wafer is etched such that the heavy doping remains at the shallow trench area, while other areas become lightly doped. With the presented method, two screening printing steps are required for obtaining a selective emitter structure on a solar wafer. Compared with existing etch-back methods, the presented one is believed to be able to easily conform with present industrial process. Experimental results show that optical responses at the short and long wavelengths were both improved by applying the proposed selective emitter technique to fabricate solar cells with an a-Si:H film deposited on the back surface. The selective emitter cell with a-Si:H back surface deposition had improvements of 1.66 mA/cm2 and 1.23% absolute in Jsc and conversion efficiency, respectively, compared to the reference cell that had a homogeneous emitter and no a-Si:H on the back surface.

  7. Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

    KAUST Repository

    Dabirian, Ali

    2017-02-15

    High-efficiency crystalline silicon (c-Si) solar cells increasingly feature sophisticated electron and hole contacts aimed at minimizing electronic losses. At the rear of photovoltaic devices, such contacts—usually consisting of stacks of functional layers—offer opportunities to enhance the infrared response of the solar cells. Here, we propose an accurate and simple modeling procedure to evaluate the infrared performance of rear contacts in c-Si solar cells. Our method combines full-wave electromagnetic modeling of the rear contact with a statistical ray optics model to obtain the fraction of optical energy dissipated from the rear contact relative to that absorbed by the Si wafer. Using this technique, we study the impact of the refractive index, extinction coefficient, and thickness of the rear-passivating layer and establish basic design rules. In addition, we evaluate novel optical structures, including stratified thin films, nanoparticle composites, and conductive nanowires embedded in a low-index dielectric matrix, for integration into advanced rear contacts in c-Si photovoltaic devices. From an optical perspective, nanowire structures preserving low contact resistance appear to be the most effective approach to mitigating dissipation losses from the rear contact.

  8. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin

    2017-09-12

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  9. Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells

    Science.gov (United States)

    Liu, Qiming; Ono, Masahiro; Tang, Zeguo; Ishikawa, Ryo; Ueno, Keiji; Shirai, Hajime

    2012-04-01

    We demonstrate a highly efficient hybrid crystalline silicon (c-Si) based photovoltaic devices with hole-transporting transparent conductive poly-(3,4-ethlenedioxythiophene):poly(styrenesufonic acid) (PEDOT:PSS) films, incorporating a Zonyl fluorosurfactant as an additive, compared to non additive devices. The usage of a 0.1% Zonly treated PEDOT:PSS improved the adhesion of precursor solution on hydrophobic c-Si wafer without any oxidation process. The average power conversion efficiency η value was 10.8%-11.3%, which was superior to those of non-treated devices. Consequently, c-Si/Zonyl-treated PEDOT:PSS heterojunction devices exhibited the highest η of 11.34%. The Zonyl-treated soluble PEDOT:PSS composite is promising as a hole-transporting transparent conducting layer for c-Si/organic photovoltaic applications.

  10. High-temperature CVD for crystalline-silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Faller, F.R.; Hurrle, A.

    1999-10-01

    The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that the authors have constructed and characterized. The system fulfills basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of the system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.

  11. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Science.gov (United States)

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-01

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

  12. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  13. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-13

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  14. Means of Improvement the Efficiency of Concentrator Crystalline Silicon Solar Cells%提高聚光单晶硅太阳电池效率的途径

    Institute of Scientific and Technical Information of China (English)

    张燎; 金文进; 薛岩

    2012-01-01

    聚光太阳能电池具有效率高、成本低等优势。从电池结构出发,着重总结了背面点接触结构、双面陷光、双面钝化、减薄电池厚度和减小发射区饱和电流密度等新技术措施对提高聚光晶体硅电池效率的重要性和优势,同时也指出了现有工艺存在的问题,最后展望了聚光单晶硅太阳能电池工艺发展的可能方向。特别指出:聚光单晶硅电池效率大幅度提高将是硅电池结构设计理论和制备工艺的的重大突破.%Concentrator solar cells have good prospects for superiority of high efficiency and low cost.This review summarizes the importance and advantages of improvement the conversion efficiency of concentrator crystalline silicon solar cells,especially focuses on the structure of back-surface point contact,double-sided light trapping,double-sided anti-reflection with double-sided passivation,thinning the thickness of the cells and reduces the emitter saturation current density and other new technology initiatives.These measures have high value to promote efficiency and decrease costs of the concentrator crystalline silicon solar cells.And it points out that the existing process problems and the possible direction of technology development.Finally,prospects on concentrator crystalline silicon solar cells are discussed,and a major breakthrough of design theory and preparation process is predicted for substantial improvement the conversion efficiency of concentrator crystalline silicon solar cells.

  15. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2014-02-01

    Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

  16. Optimization of sodium carbonate texturization on large-area crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marrero, N.; Gonzalez-Diaz, B.; Guerrero-Lemus, R.; Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda, Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Borchert, D. [Auf der Reihe 2, Institut fuer Solare Energiesysteme, Fraunhofer Institut, 45884 Gelsenkirchen (Germany)

    2007-12-14

    This work describes a texturization method for monocrystalline silicon solar cells based on a mixture of sodium carbonate and sodium hydrogen carbonate solutions. A specific solution has been found that results in an optimal etching rate, the lowest surface reflectance and a homogeneous density of pyramidal structures on the silicon surface. The subsequent phosphorus diffusion with rapid thermal processes has been modified in order to drastically reduce the process time and, simultaneously, to obtain a high homogeneity of the sheet resistance values and improved photocarriers lifetimes. 100 x 100 mm solar cells with an efficiency of 15.8% have been obtained compared to an efficiency of 14.7% for the reference cell. (author)

  17. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  18. Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model

    Energy Technology Data Exchange (ETDEWEB)

    Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580 (Japan)]. E-mail: kakimoto@riam.kyushu-u.ac.jp; Liu Lijun [Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580 (Japan); Nakano, Satoshi [Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580 (Japan)

    2006-10-15

    The unidirectional-solidification process is a key method for large-scale production of multi-crystalline silicon for use in highly efficient solar cells in the photovoltaic industry. Since the efficiency of solar cells depends on the crystal quality of the multi-crystalline silicon, it is necessary to optimize the unidirectional-solidification process to control temperature and impurity distributions in a silicon ingot. We developed a transient global model for the unidirectional-solidification process. We carried out calculations to investigate the temperature and impurity distributions in a silicon ingot during solidification. Conductive heat transfer and radiative heat exchange in a unidirectional-solidification furnace and convective heat transfer in the melt in a crucible are coupled to each other. These heat exchanges were solved iteratively by a finite volume method in a transient condition. Time-dependent distributions of impurity and temperature in a silicon ingot during the unidirectional-solidification process were numerically investigated.

  19. Structural defects caused by a rough substrate and their influence on the performance of hydrogenated nano-crystalline silicon n-i-p solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongbo B.T.; Franken, Ronald H.; Rath, Jatindra K.; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands)

    2009-03-15

    We present a cross-sectional transmission electron microscopy study of a set of hydrogenated nano-crystalline silicon n-i-p solar cells deposited by hot-wire chemical vapour deposition on Corning glass substrates coated with ZnO-covered Ag layers with various surface roughnesses. Strip-like structural defects (voids and low-density areas) are observed in the silicon layers originating from micro-valleys of Ag grains. A correlation between the opening angles of the textured surface and the appearance of these strips was found. We propose that in order to grow high-quality hydrogenated nano-crystalline silicon absorber layers for solar cell applications, the morphology of the Ag surface is a critical property, and the micro-valleys at the ZnO surface with an opening angle smaller than around 110 should be avoided. (author)

  20. Copper conducting electrode with nickel as a seed layer for selective emitter crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rehman, Atteq ur; Shin, Eun Gu; Lee, Soo Hong [Sejong University, Seoul (Korea, Republic of)

    2014-09-15

    In this research, we investigated selective emitter formation with a single-step photolithography process having a metallization scheme composed of nickel/copper metal stacks. The nickel seed layers were deposited by applying the electroless deposition process while copper was formed by light induced electro-plating arrangements as the main conducting electrode. The electroless deposition of nickel, along with a sintering process, was employed to create a diffusion barrier between copper and silicon. The nickel metal stack below the copper-conducting electrode also helped in lowering the sheet resistance and improving the contact adhesion. The nickel used as a seed layer was successfully demonstrated in the fabrication of a homogeneous 60 Ω/ emitter and selective emitter cells. Lower series resistances of 0.165 Ω and 0.253 Ω were achieved for the selective emitter and the homogeneous emitter cells, respectively. The best cell efficiency of 18.37% for the selective emitter solar cell was achieved, with average cell efficiencies of 18.17% and 17.3% for the selective emitter and the homogeneous emitter cells, respectively. An approximate efficiency increase of about 0.8% was recorded for the selective emitter solar cells.

  1. A fair comparison between ultrathin crystalline-silicon solar cells with either periodic or correlated disorder inverted pyramid textures.

    Science.gov (United States)

    Muller, Jérôme; Herman, Aline; Mayer, Alexandre; Deparis, Olivier

    2015-06-01

    Fabrication of competitive solar cells based on nano-textured ultrathin silicon technology is challenging nowadays. Attention is paid to the optimization of this type of texture, with a lot of simulation and experimental results published in the last few years. While previous studies discussed mainly the local features of the surface texture, we highlight here the importance of their filling fraction. In this work, we focus on a fair comparison between a technologically realizable correlated disorder pattern of inverted nano-pyramids on an ultrathin crystalline-silicon layer, and its periodically patterned counterpart. A fair comparison is made possible by defining an equivalent periodic structure for each hole filling fraction. Moreover, in order to be as realistic as possible, we consider patterns that could be fabricated by standard patterning techniques: hole-mask colloidal lithography, nanoimprint lithography and wet chemical etching. Based on numerical simulations, we show that inverted nano-pyramid patterns with correlated disorder provide typically greater efficiency than their periodic counterparts. However, the hole filling fraction of the etched pattern plays a crucial role and may limit the benefits of the correlated disorder due to experimental restrictions on pattern fabrication.

  2. Random Si nanopillars for broadband antireflection in crystalline silicon solar cells

    Science.gov (United States)

    Choi, Junhee; Lee, Taek Sung; Jeong, Doo Seok; Lee, Wook Seong; Kim, Won Mok; Lee, Kyeong-Seok; Kim, Donghwan; Kim, Inho

    2016-09-01

    We demonstrate the fabrication of shallow Si nanopillar structures at a submicron scale which provides broadband antireflection for crystalline Si (c-Si) solar cells in the wavelength range of 350 nm-1100 nm. The Si random nanopillars were made by reactive ion etch (RIE) processing with thermally dewetted Sn metals as an etch mask. The diameters and coverages of the Si nanopillars were adjusted in a wide range of the nanoscale to microscale by varying the nominal thickness of the Sn metals and subsequent annealing temperatures. The height of the nanopillars was controlled by the RIE process time. The optimal size of the nanopillars, which are 340 nm in diameter and 150 nm in height, leads to the lowest average reflectance of 3.6%. We showed that the power conversion efficiency of the c-Si solar cells could be enhanced with the incorporation of optimally designed Si random nanopillars from 13.3% to 14.0%. The fabrication scheme of the Si nanostructures we propose in this study would be a cost-effective and promising light trapping technique for efficient c-Si solar cells.

  3. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  4. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell.

    Science.gov (United States)

    Song, Kyuwan; Kim, Bonggi; Lee, Hoongjoo; Lee, Youn-Jung; Park, Cheolmin; Balaji, Nagarajan; Ju, Minkyu; Choi, Jaewoo; Yi, Junsin

    2012-07-23

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm-3 in the low sheet resistance (Rs) region and 7 × 1019 cm-3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm-2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm-2, Voc of 625.7 mV, and efficiency of 17.60%.

  5. Hydrogen passivation of electrically active defects in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Milstein, J B; Tsuo, Y S; Osterwald, C R; White, C W

    1984-06-01

    We have observed significant improvements in the efficiencies of dendritic web and edge-supported-pulling (ESP) silicon sheet solar cells after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. We have determined that the silicon sputter rate for a constant ion beam flux of 0.60 +- 0.05 mA/cm/sup 2/ exhibits a maximum at approximately 1400 eV ion beam energy. We have observed that hydrogen ion beam treatment can result in a reduced fill factor, which is caused by damage to the front metallization of the cell rather than by damage to the p-n junction.

  6. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  7. Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells

    Science.gov (United States)

    Zarroug, Ahmed; Hamed, Zied Ben; Derbali, Lotfi; Ezzaouia, Hatem

    2017-04-01

    This paper examines a gettering process of Czochralski silicon (CZ) via mechanical texture, followed by two step heat treatment in the presence of porous silicon layer (PSL) under oxygen flow gas. It is shown that a process with PS has a positive trend of improvement in the electronic quality, and found to be more efficient when used in combination with mechanical grooving. We obtained a significant increase of the effective minority carrier lifetime and majority charge carriers mobility. Thus, there is an apparent decrease in the resistivity. These parameters were estimated through a The Quasi-Steady-State Photo-Conductance technique (QSSPC), the van Der Pauw method and Hall Effect. Particularly, we have made obvious that the large enhancement of the electronic quality of the wafers can be related to the presence of grooves, the influence during which the gettering process is of importance to overcome the unexpected saturation phenomena. The current voltage I-V characteristics of all samples had been measured under illumination. They were shown to enhance the photovoltaic properties of solar cells.

  8. Mismatched front and back gratings for optimum light trapping in ultra-thin crystalline silicon solar cells

    Science.gov (United States)

    Hsu, Wei-Chun; Tong, Jonathan K.; Branham, Matthew S.; Huang, Yi; Yerci, Selçuk; Boriskina, Svetlana V.; Chen, Gang

    2016-10-01

    The implementation of a front and back grating in ultra-thin photovoltaic cells is a promising approach towards improving light trapping. A simple design rule was developed using the least common multiple (LCM) of the front and back grating periods. From this design rule, several optimal period combinations can be found, providing greater design flexibility for absorbers of indirect band gap materials. Using numerical simulations, the photo-generated current (Jph) for a 10-μm-thick crystalline silicon absorber was predicted to be as high as 38 mA/cm2, which is 11.74% higher than that of a single front grating (Jph=34 mA/cm2).

  9. 77 FR 63788 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-10-17

    ... modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells, whether or not... modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells, whether or not... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into...

  10. 77 FR 73017 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-12-07

    ... modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells, whether or not... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... issuing a countervailing duty order on crystalline silicon photovoltaic cells, whether or not...

  11. 77 FR 14732 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-03-13

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... of crystalline silicon photovoltaic cells, whether or not assembled into modules, from the People's.... \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From...

  12. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  13. Potential of ITO nanoparticles formed by hydrogen treatment in PECVD for improved performance of back grid contact crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sourav; Mitra, Suchismita; Dhar, Sukanta; Ghosh, Hemanta; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com; Datta, Swapan K.; Saha, Hiranmoy

    2015-09-15

    Highlights: • Indium tin oxide (ITO) nanoparticles as back scatterers in c-Si solar cells. • ITO NP have comparatively low dissipative losses and tunable optical properties. • ITO NP formed by hydrogen plasma treatment on sputtered ITO film. • Enhanced absorption and carrier collection at longer wavelengths due to enhanced light trapping. - Abstract: This paper discusses the prospect of using indium tin oxide (ITO) nanoparticles as back scatterers in crystalline silicon solar cells instead of commonly used metal nanoparticles as ITO nanoparticles have comparatively low dissipative losses and tunable optical properties. ITO nanoparticles of ∼5–10 nm size is developed on the rear side of the solar cell by deposition of ∼5–10 nm thick ITO layer by DC magnetron sputtering followed by hydrogen treatment in PECVD. The silicon solar cell is fabricated in the laboratory using conventional method with grid metal contact at the back surface. Various characterizations like FESEM, TEM, AFM, XRD, EQE and IV characteristics are performed to analyze the morphology, chemical composition, optical characteristics and electrical performance of the device. ITO nanoparticles at the back surface of the solar cell significantly enhances the short circuit current, open circuit voltage and efficiency of the solar cell. These enhancements may be attributed to the increased absorption and carrier collection at longer wavelengths of solar spectrum due to enhanced light trapping by the ITO nanoparticles and surface passivation by the hydrogen treatment of the back surface.

  14. Relation of lifetime to surface passivation for atomic-layer-deposited Al{sub 2}O{sub 3} on crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Young Joon [Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Song, Hee Eun, E-mail: hsong@kier.re.kr [Photovoltaic Center, Korea Institute of Energy Research, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Chang, Hyo Sik, E-mail: hschang@cnu.ac.kr [Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

    2015-03-15

    Highlights: • We investigated the relation of potassium contamination on Si solar wafer to lifetime. • We deposited Al{sub 2}O{sub 3} layer by atomic layer deposition (ALD) on Si solar wafer after several cleaning process. • Potassium can be left on Si surface by incomplete cleaning process and degrade the Al{sub 2}O{sub 3} passivation quality. - Abstract: We investigated the relation of potassium contamination on a crystalline silicon (c-Si) surface after potassium hydroxide (KOH) etching to the lifetime of the c-Si solar cell. Alkaline solution was employed for saw damage removal (SDR), texturing, and planarization of a textured c-Si solar wafer prior to atomic layer deposition (ALD) Al{sub 2}O{sub 3} growth. In the solar-cell manufacturing process, ALD Al{sub 2}O{sub 3} passivation is utilized to obtain higher conversion efficiency. ALD Al{sub 2}O{sub 3} shows excellent surface passivation, though minority carrier lifetime varies with cleaning conditions. In the present study, we investigated the relation of potassium contamination to lifetime in solar-cell processing. The results showed that the potassium-contaminated samples, due to incomplete cleaning of KOH, had a short lifetime, thus establishing that residual potassium can degrade Al{sub 2}O{sub 3} surface passivation.

  15. Effect of the CO2/SiH4 Ratio in the p-[mu]c-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    National Research Council Canada - National Science Library

    Jaran Sritharathikhun; Taweewat Krajangsang; Apichan Moollakorn; Sorapong Inthisang; Amornrat Limmanee; Aswin Hongsingtong; Nattaphong Boriraksantikul; Tianchai Taratiwat; Nirod Akarapanjavit; Kobsak Sriprapha

    2014-01-01

    .... The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μ c-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μ c...

  16. Influence of the impurity-defect and impurity-impurity interactions on the crystalline silicon solar cells conversion efficiency; Influence des interactions impurete-defaut et impurete-impurete sur le rendement de conversion des cellules photovoltaiques au silicium cristallin

    Energy Technology Data Exchange (ETDEWEB)

    Dubois, S

    2007-05-15

    This study aims at understanding the influence of the impurity - defect interaction on the silicon solar cell performances. We studied first the case of single-crystalline silicon. We combined numerical simulations and experimental data providing new knowledge concerning metal impurities in silicon, to quantify the evolution of the conversion efficiency with the impurity concentration. Mainly due to the gettering effects, iron appears to be quite well tolerated. It is not the case for gold, diffusing too slowly. Hydrogenation effects were limited. We transposed then this study toward multi-crystalline silicon. Iron seems rather well tolerated, due to the gettering effects but also due to the efficiency of the hydrogenation. When slow diffusers are present, multi crystalline silicon is sensitive to thermal degradation. n-type silicon could solve this problem, this material being less sensitive to metal impurities. (author)

  17. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  18. 太阳能级多晶硅片表面制绒的研究%Research of Texturization on Multi-crystalline Silicon Surface for Solar Cell

    Institute of Scientific and Technical Information of China (English)

    管世兵; 殷伟琦; 严俊; 顾顺超

    2013-01-01

    主要研究多晶硅太阳能电池片工业制绒的酸腐蚀过程,腐蚀液是由HNO3、HF和H2 SiF6组成的混合液,未添加其他试剂作为反应缓释剂;采用SEM和紫外分光光度计对多晶硅片表面制绒形貌进行观察和检测分析.实验过程中,按照工业生产的实际模型,首先研究确定了最佳腐蚀时间为2 min,之后主要研究了酸腐蚀过程中的H2SiF6浓度对多晶硅表面制绒效果的影响,优化得到H2SiF6的最低含量为2%,并确定最佳腐蚀工艺条件,为进一步回收利用腐蚀废液提供依据.%The acid etching process for industrial texturing of multi-crystalline silicon solar cells was studied. In this process, multi-crystalline silicon wafers were textured in acid solution, which was constituted with HNO3, HF and H2SiF6, without any other reagents as release agent. By using the SEM and UV spectrophotometer, detailed study of the surface morphology and optical properties of the different etched surfaces were carried out. During the experiment, the study was focused on the etching time at first, and obtained a best etching time of 2 min. Then the influence of H2SiF6 concentration in the acid solution on multi-crystalline silicon surface texturing effect was studied, with the actual model of industrial productioa From the analytical results, H2SiF6 content and etching conditions were optimized, which would be the basis for further recycling of waste solution.

  19. Low cost sol–gel derived SiC–SiO{sub 2} nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jannat, Azmira [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Solar Energy Engineering, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Lee, Woojin [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Akhtar, M. Shaheer, E-mail: shaheerakhtar@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Li, Zhen Yu [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Yang, O.-Bong, E-mail: obyang@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of)

    2016-04-30

    Graphical abstract: - Highlights: • Sol–gel derived SiC–SiO{sub 2} nanocomposite was prepared. • It effectively coated as AR layer on p-type Si-wafer. • SiC–SiO{sub 2} layer on Si solar cells exhibited relatively low reflectance of 7.08%. • Fabricated Si solar cell attained highly comparable performance of 16.99% to commercial device. - Abstract: This paper describes the preparation, characterizations and the antireflection (AR) coating application in crystalline silicon solar cells of sol–gel derived SiC–SiO{sub 2} nanocomposite. The prepared SiC–SiO{sub 2} nanocomposite was effectively applied as AR layer on p-type Si-wafer via two step processes, where the sol–gel of precursor solution was first coated on p-type Si-wafer using spin coating at 2000 rpm and then subjected to annealing at 450 °C for 1 h. The crystalline, and structural observations revealed the existence of SiC and SiO{sub 2} phases, which noticeably confirmed the formation of SiC–SiO{sub 2} nanocomposite. The SiC–SiO{sub 2} layer on Si solar cells was found to be an excellent AR coating, exhibiting the low reflectance of 7.08% at wavelengths ranging from 400 to 1000 nm. The fabricated crystalline Si solar cell with SiC–SiO{sub 2} nanocomposite AR coating showed comparable power conversion efficiency of 16.99% to the conventional Si{sub x}N{sub x} AR coated Si solar cell. New and effective sol–gel derived SiC–SiO{sub 2} AR layer would offer a promising technique to produce high performance Si solar cells with low-cost.

  20. 以技术创新推动晶体硅太阳能电池智慧生产线建设%Intelligent Production Line Construction of Crystalline Silicon Solar Cell through Technological innovation

    Institute of Scientific and Technical Information of China (English)

    谢建国; 赵加宝

    2014-01-01

    In this paper, the status of the technology of crystalline silicon solar cell production line was reviewed, the future trends of crystal silicon solar cell technology is analyzed, and the technical characteristic of modern crystalline silicon cell production line was summarized, proposing that the combination of innovative technology and equipment, efficient process automation, intelligent monitoring and decision-making are the three main features of modern intelligent crystalline silicon cell production line. On this basis, an intelligent crystalline silicon cell manufacturing system frame with modern technical features was proposed, and its structure, design and implementation were briefly introduced.%综述了晶体硅太阳能电池生产线的技术现状,并结合晶体硅电池技术的未来发展方向,分析了晶体硅太阳能电池生产线技术的发展趋势,认为创新工艺及设备、高产能及高效自动化、监控与决策智能化是未来晶体硅太阳能电池生产线的三大主要特征,在此基础上,提出了一种晶体硅太阳能电池智慧生产线,简要介绍了其结构组成,特点及实现。1

  1. Research on Matching of Sintering Process of Crystalline Silicon Solar Cells%晶体硅太阳能电池烧结匹配性研究

    Institute of Scientific and Technical Information of China (English)

    杨达伟; 高华; 杨乐

    2013-01-01

      良好的烧结能够极大地提升太阳能电池的转换效率。通过理论分析太阳能电池烧结后各参数的变化情况,预测烧结的状态以及烧结的调节方向,进而通过实验来验证理论分析,从而得到工业生产中晶硅电池烧结匹配优化方法。通过不断对烧结的优化,从而达到了改善烧结效果,提升电池片功率的目的。%Good sintering can enhance the conversion efficiency of solar cells. Through theoretical analysis of the parameters changes of the solar cell after sintering, and predict the state of the sintering and sintering direction of regulation, and then by doing experiments to verify the theoretical analysis, result in matching optimization method of the industrial production of crystalline silicon cells sintering. Through continuous optimization of the sintering, achieve the purpose of improving sintering effect, and enhance the conversion efficiency of solar cells.

  2. Variation in the Optical Properties of the SiC-SiO2 Composite Antireflection Layer in Crystalline Silicon Solar Cells by Annealing

    Science.gov (United States)

    Jannat, Azmira; Li, Zhen Yu; Akhter, M. Shaheer; Yang, O.-Bong

    2017-07-01

    This study showed the effects of annealing on a sol-gel-derived SiC-SiO2 composite antireflection (AR) layer and investigated the optical and photovoltaic properties of crystalline silicon (Si) solar cells. The SiC-SiO2 composite AR coating showed a considerable decrease in reflectance from 7.18% to 3.23% at varying annealing temperatures of 450-800°C. The refractive indices of the SiC-SiO2 composite AR layer were tuned from 2.06 to 2.45 with the increase in annealing temperature. The analysis of the current density-voltage characteristics indicated that the energy conversion efficiencies of the fabricated Si solar cells gradually increased from 16.99% to 17.73% with increasing annealing temperatures of 450-800°C. The annealing of the SiC-SiO2 composite AR layer in Si solar cells was crucial to improving the optical, morphological, and photovoltaic properties.

  3. Enhancing the ultraviolet-visible-near infrared photovoltaic responses of crystalline-silicon solar cell by using aluminum nanoparticles

    Science.gov (United States)

    Hu, Fei; Zhou, Zhi-Quan; Ma, Lei; Zhang, Chi; Zhou, Wen-Jie; Lu, Ming

    2017-10-01

    We report to apply Al nanoparticles (NPs) to enhance the photovoltaic response of crystalline- or c-Si solar cell from the ultraviolet (UV) throughout the visible and near infrared (NIR) regimes. Al NPs were induced by solid thermal annealing and embedded in a SiO2 layer that was to passivate the front side of solar cell. Upon the excitation of surface plasmons (SPs) on the Al NPs under light illumination, an enhancement of broadband absorption of the solar cell was observed. The incorporation of Al NPs led to a relative 13.8% increase in photoelectric conversion efficiency of c-Si solar cell, and an external quantum efficiency enhancement from the UV throughout the visible and NIR regimes. The improvement of c-Si solar cell performance was attributed to both effects of absorption and scattering by SPs.

  4. Quantification of Power Losses of the Interdigitated Metallization of Crystalline Silicon Thin-Film Solar Cells on Glass

    OpenAIRE

    Gress, Peter J.; Sergey Varlamov

    2012-01-01

    The metallization grid pattern is one of the most important design elements for high-efficiency solar cells. This paper presents a model based on the unit cell approach to accurately quantify the power losses of a specialized interdigitated metallization scheme for polycrystalline silicon thin-film solar cells on glass superstrates. The sum of the power losses can be minimized to produce an optimized grid-pattern design for a cell with specific parameters. The model is simulated with the stan...

  5. Quantification of Power Losses of the Interdigitated Metallization of Crystalline Silicon Thin-Film Solar Cells on Glass

    Directory of Open Access Journals (Sweden)

    Peter J. Gress

    2012-01-01

    Full Text Available The metallization grid pattern is one of the most important design elements for high-efficiency solar cells. This paper presents a model based on the unit cell approach to accurately quantify the power losses of a specialized interdigitated metallization scheme for polycrystalline silicon thin-film solar cells on glass superstrates. The sum of the power losses can be minimized to produce an optimized grid-pattern design for a cell with specific parameters. The model is simulated with the standard parameters of a polycrystalline silicon solar cell, and areas for efficiency improvements are identified, namely, a reduction in emitter finger widths and a shift toward series-interconnected, high-voltage modules with very small cell sizes. Using the model to optimize future grid-pattern designs, higher cell and module efficiencies of such devices can be achieved.

  6. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    Science.gov (United States)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVsolar cells using the stack structure for front surface passivation. Direct comparison shows that such low temperature deposited stack structure developed in this work achieves comparable device performance to the high temperature processed front surface passivation structure used in other high efficiency IBC solar cells. However, the lower fill factor (FF) of IBC-SHJ solar cell as compared with traditional front a-Si:H/c-Si heterojunction cell (HIT cell) greatly limits the overall performance of these devices. Two-dimensional (2D) simulations were used to comparatively model the HIT and IBC-SHJ solar cells to understand the underlying device physics which controls cell performance. The effects of a wide

  7. PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    M. Hofmann

    2008-01-01

    Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

  8. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  9. Emitter study of front junction back contact crystalline silicon solar cells%前结背接触晶硅太阳电池发射区研究

    Institute of Scientific and Technical Information of China (English)

    周涛; 陆晓东; 吴元庆; 刘兴辉; 吴春瑜

    2015-01-01

    利用Silvaco-TCAD仿真软件全面系统地分析了发射区表面浓度(cE)、结深(xj)及发射区覆盖比率(EF)对P型前结背接触晶硅太阳电池输出特性的影响。结果表明:基于常规低成本P型晶硅衬底(利用直拉法生长,电阻率为1.5Ω·cm,少子寿命为10μs)的前结背接触太阳电池,其上表面发射区表面浓度及结深对太阳电池的输出特性产生显著影响。上表面发射区表面浓度和结深越大,短波入射光外量子效率越小。当上表面发射区表面浓度为1×1019 cm–3,结深为0.2μm时,电池效率高达20.72%。侧面和下表面发射区表面浓度及结深对太阳电池输出特性的影响较小。但侧面和下表面发射区覆盖比率对太阳电池的输出特性产生显著影响。侧面和下表面发射区覆盖比率越大,太阳电池外量子效率和转换效率越高。%By using Silvaco-TCAD simulation software, the influences of the emitter surface concentration (cE), the junction depth (xj) and the emitter fraction (EF) on the output characteristics of P-type front junction back contact crystalline silicon solar cell was analyzed. The results show that the upper surface emitter surface concentration and the junction depth of the front junction back contact crystalline silicon solar cell based on conventional low-cost P-type silicon substrate (CZ growth method, the resistivity is 1.5Ω·cm, the minority carrier life is 10μs) have a noticeable effect on output characteristics of solar cells. The higher the upper surface emitter surface concentration, the deeper the junction depth, the lower the short wavelength incident light external quantum efficiency. When the upper surface emitter surface concentration is 1×1019 cm–3 and the junction depth is 0.2μm,the solar cell conversion efficiency reaches 20.72%. The side-surface and under-surface emitter surface concentration and the junction depth have a slight effect on output

  10. Crystalline silicon cell performance at low light intensities

    NARCIS (Netherlands)

    Reich, N.H.|info:eu-repo/dai/nl/30483453X; van Sark, W.G.J.H.M.|info:eu-repo/dai/nl/074628526; Alsema, E.A.|info:eu-repo/dai/nl/073416258; Lof, R.W.; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584; Sinke, W.C.|info:eu-repo/dai/nl/071641009; Turkenburg, W.C.|info:eu-repo/dai/nl/073416355

    2009-01-01

    Measured and modelled JV characteristics of crystalline silicon cells below one sun intensity have been investigated. First, the JV characteristics were measured between 3 and 1000 W/m2 at 6 light levels for 41 industrially produced mono- and multi-crystalline cells from 8 manufacturers, and at 29 i

  11. Side chain engineering of poly-thiophene and its impact on crystalline silicon based hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zellmeier, M.; Rappich, J.; Nickel, N. H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin (Germany); Klaus, M.; Genzel, Ch. [Department of Microstructure and Residual Stress Analysis, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Janietz, S. [Department of Polymer Electronics, Fraunhofer Institute for Applied Polymer Research, Geiselbergstr. 69, 14476 Potsdam (Germany); Frisch, J.; Koch, N. [Humboldt Universität zu Berlin, Brook-Taylor-Straße 6, 12489 Berlin (Germany)

    2015-11-16

    The influence of ether groups in the side chain of spin coated regioregular polythiophene derivatives on the polymer layer formation and the hybrid solar cell properties was investigated using electrical, optical, and X-ray diffraction experiments. The polymer layers are of high crystallinity but the polymer with 3 ether groups in the side chain (P3TOT) did not show any vibrational fine structure in the UV-Vis spectrum. The presence of ether groups in the side chains leads to better adhesion resulting in thinner and more homogeneous polymer layers. This, in turn, enhances the electronic properties of the planar c-Si/poly-thiophene hybrid solar cell. We find that the power conversion efficiency increases with the number of ether groups in the side chains, and a maximum power conversion efficiency of η = 9.6% is achieved even in simple planar structures.

  12. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells

    Science.gov (United States)

    Tayagaki, Takeshi; Furuta, Daichi; Aonuma, Osamu; Takahashi, Isao; Hoshi, Yusuke; Kurokawa, Yasuyoshi; Usami, Noritaka

    2017-04-01

    Crystalline silicon (c-Si) wafers have found extensive use in photovoltaic applications. In this regard, to enable advanced light manipulation in thin-wafer c-Si solar cells, we demonstrate the fabrication of double-side-textured Si wafers composed of a front-surface photonic nanotexture fabricated with quantum dot arrays and a rear-surface microtexture. The addition of the rear-surface microtexture to a Si wafer with the front-surface photonic nanotexture increases the wafer’s optical absorption in the near-infrared region, thus enabling enhanced light trapping. Excitation spectroscopy reveals that the photoluminescence intensity in the Si wafer with the double-sided texture is higher than that in the Si wafer without the rear-surface microtexture, thus indicating an increase in true optical absorption in the Si wafer with the double-sided texture. Our results indicate that the double-sided textures, i.e., the front-surface photonic nanotexture and rear-surface microtexture, can effectively reduce the surface reflection loss and provide enhanced light trapping, respectively.

  13. Short-circuit current density imaging of crystalline silicon solar cells via lock-in thermography: Robustness and simplifications

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

    2014-11-14

    Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can be omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  14. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  15. Stability of SiNX/SiNX double stack antireflection coating for single crystalline silicon solar cells

    Science.gov (United States)

    Lee, Youngseok; Gong, Daeyeong; Balaji, Nagarajan; Lee, Youn-Jung; Yi, Junsin

    2012-01-01

    Double stack antireflection coatings have significant advantages over single-layer antireflection coatings due to their broad-range coverage of the solar spectrum. A solar cell with 60-nm/20-nm SiNX:H double stack coatings has 17.8% efficiency, while that with a 80-nm SiNX:H single coating has 17.2% efficiency. The improvement of the efficiency is due to the effect of better passivation and better antireflection of the double stack antireflection coating. It is important that SiNX:H films have strong resistance against stress factors since they are used as antireflective coating for solar cells. However, the tolerance of SiNX:H films to external stresses has never been studied. In this paper, the stability of SiNX:H films prepared by a plasma-enhanced chemical vapor deposition system is studied. The stability tests are conducted using various forms of stress, such as prolonged thermal cycle, humidity, and UV exposure. The heat and damp test was conducted for 100 h, maintaining humidity at 85% and applying thermal cycles of rapidly changing temperatures from -20°C to 85°C over 5 h. UV exposure was conducted for 50 h using a 180-W UV lamp. This confirmed that the double stack antireflection coating is stable against external stress.

  16. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Science.gov (United States)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  17. 77 FR 37877 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-06-25

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... determination in the antidumping duty investigation of crystalline silicon photovoltaic cells, whether or not... (202) 482-4406, respectively. Correction In the Federal Register notice Crystalline...

  18. Concentrator bifacial crystalline silicon solar cells with multi-wire metallization attached to TCO layers using transparent conductive polymers

    Science.gov (United States)

    Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim

    2017-09-01

    Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The

  19. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhauer, David; Preidel, Veit; Becker, Christiane [Young Investigator Group Nanostructured Silicon for Photovoltaic and Photonic Implementations (Nano-SIPPE), Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Pollakowski, Beatrix; Beckhoff, Burkhard [Physikalisch-Technische Bundesanstalt, Berlin (Germany); Baumann, Jonas; Kanngiesser, Birgit [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany); Amkreutz, Daniel; Rech, Bernd [Institut Silizium Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Back, Franziska; Rudigier-Voigt, Eveline [SCHOTT AG, Mainz (Germany)

    2015-03-01

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiO{sub x} or SiO{sub x}/SiC{sub x}) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiO{sub x} compared to the SiO{sub x}/SiC{sub x} interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

    Science.gov (United States)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  1. Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

    OpenAIRE

    Yung-Chun Tu; Shui-Jinn Wang; Chien-Hung Wu; Kow-Ming Chang; Tseng-Hsing Lin; Chien-Hsiung Hung; Jhen-Siang Wu

    2015-01-01

    The fabrication of silicon oxynitride (SiON)/ZnO nanotube (NT) arrays and their application in improving the energy conversion efficiency (η) of crystalline Si-based solar cells (SCs) are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si) to 1.9~2.0 (Si3N4 and ZnO) to 1.72~1.75 (SiON) to 1 (air). Experimental results show that the use of 0.4 μm long ZnO NT arrays coated with a 150 nm thick SiON film increases Δη/η by 39.2% under AM 1.5 G (100 mW/cm2) ill...

  2. 76 FR 78313 - Crystalline Silicon Photovoltaic Cells and Modules From China

    Science.gov (United States)

    2011-12-16

    ... COMMISSION Crystalline Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the... is materially injured by reason of imports from China of crystalline silicon photovoltaic cells and... crystalline silicon photovoltaic cells and modules from China. Accordingly, effective October 19, 2011,...

  3. 77 FR 10478 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-02-22

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... crystalline silicon photovoltaic cells, whether or not assembled into modules, from the People's Republic of..., 2012, which the Department granted.\\2\\ \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or...

  4. 77 FR 25400 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-04-30

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... in this countervailing duty (CVD) investigation of crystalline silicon photovoltaic cells, whether or... 19 CFR 351.210(b)(4)(i) and 210(i). \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or...

  5. 76 FR 81914 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2011-12-29

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... of Commerce (the Department) initiated the countervailing duty investigation of crystalline silicon..., the preliminary determination is due no later than January 12, 2012. \\1\\ See Crystalline...

  6. Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available The fabrication of silicon oxynitride (SiON/ZnO nanotube (NT arrays and their application in improving the energy conversion efficiency (η of crystalline Si-based solar cells (SCs are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si to 1.9~2.0 (Si3N4 and ZnO to 1.72~1.75 (SiON to 1 (air. Experimental results show that the use of 0.4 μm long ZnO NT arrays coated with a 150 nm thick SiON film increases Δη/η by 39.2% under AM 1.5 G (100 mW/cm2 illumination as compared to that of regular SCs with a Si3N4/micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

  7. Simulation calculations of efficiencies and silicon consumption for CH3NH3PbI3-x-y Br x Cl y /crystalline silicon tandem solar cells

    Science.gov (United States)

    Zhang, Lili; Xie, Ziang; Tian, Fuyang; Qin, Guogang

    2017-04-01

    Much attention has been paid to two-subcell tandem solar cells (TSCs) with crystalline silicon (c-Si) as the bottom cell (TSC-Si). Previous works have pointed out that the optimal band gap, E g, of the top cell material for a TSC-Si is around 1.75 eV. With a tunable E g and better stability than MAPbI3 (MA  =  CH3NH3), MAPbI3-x-y Br x Cl y is a promising candidate for the top cell material of a TSC-Si. In this work, calculations concerning the E g, refractive index and extinction coefficient of MAPbI3-x-y Br x Cl y are performed using first-principles calculations including the spin-orbit coupling (SOC) effect. MAPbI3-x-y Br x Cl y with five sets of x and y, which have a E g around 1.75 eV, are obtained. On this basis, absorption of the perovskite top cell is calculated applying the Lambert-Beer model (LBM) and the transfer matrix model (TMM), respectively. Considering the Auger recombination in the c-Si bottom cell and radiation coupling between the two subcells, the efficiencies for MAPbI3-x-y Br x Cl y /c-Si TSCs with the five sets of x and y are calculated. Among them, the MAPbI2.375Br0.5Cl0.125/c-Si TSC achieves the highest efficiency of 35.1% with a 440 nm thick top cell and 50 µm thick c-Si when applying the LBM. When applying the TMM, the highest efficiency of 32.5% is predicted with a 580 nm thick MAPbI2.375Br0.5Cl0.125 top cell and 50 µm thick c-Si. Compared with the limiting efficiency of 27.1% for a 190 µm thick c-Si single junction solar cell (SC), the MAPbI2.375Br0.5Cl0.125/c-Si TSC shows a superior performance of high efficiency and low c-Si consumption.

  8. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hirsch, Jens, E-mail: J.Hirsch@emw.hs-anhalt.de [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany); Gaudig, Maria; Bernhard, Norbert [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Lausch, Dominik [Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany)

    2016-06-30

    to substitute the industrial state of the art wet chemical textures in the solar cell mass production.

  9. Research on Crystalline Silicon Solar Cells with Low Cost and High Efficiency%低成本、高效率晶硅太阳电池的研究

    Institute of Scientific and Technical Information of China (English)

    孟彦龙; 贾锐

    2011-01-01

    晶硅太阳电池的发展仍然以降低成本、提高效率为主题,围绕这一主题发展出来各种电池结构.文章概述了目前几种转化效率超过20%并且可实现低成本的电池结构,这些电池包括异质结本征薄层(HIT)电池、叉指状背接触(IBC)电池、金属绕通(MWT)电池及发射区绕通(EWT)电池.通过对这几种电池结构的利弊进行分析讨论,总结了各类电池制备所面临问题以及可能的解决方案,为今后低成本、高效率太阳电池的研究提供一些有益的借鉴.%Reducing cost and enhancing efficiency are main issues for the research of crystalline silicon solar cells. Up to now, many structures have been developed for the purpose of realizing cost-effective crystalline silicon solar cells. Several solar cells whose conversion efficiency can be higher than 20%, including heterojunction with intrinsic layer(HIT) cell,interdigitated back-contact(IBC) cell, metal-wrap-through(MWT) cell and emitter-wrap-through (EWT) cell, are reviewed in this paper. The characteristics of these cells are elaborated. The challenges to realize high rate of costs as well as the techniques referred are also reviewed. The discussions will give some direction for the future research on industrial crystalline silicon solar cells.

  10. 氧化铝钝化在晶体硅太阳电池中的应用%Al2O3 Passivation for Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    吴大卫; 贾锐; 武德起; 丁武昌; 陈伟; 陈晨; 岳会会; 刘新宇; 陈宝钦

    2011-01-01

    Firstly, the development of the aluminum oxide (Al2O3) passivation technology is reviewed, and the preparation methods are summarized. Then, the material properties and passivation mechanisms of the Al2O3 films are described in detail. It is pointed out that the Al2O3 films have excellent field-effect passivation property and chemical passivation property. Thus, the Al2O3 films can be well applied to the passivation of lowly doped and highly doped p-type silicon surfaces. Besides that, the Al2O3 films are of good heat stability, satisfying the requirement of screen-printed solar cells. Finally, the latest studies of the Al2O3 films passivation technology applied to crystalline silicon solar cells are presented, the application problems of Al2O3 films for the industry production are pointed out, and some effective solutions are proposed in the light of these problems.%首先,回顾了氧化铝钝化技术的发展历程,对制备氧化铝钝化薄膜的手段进行了总结,并且详细描述了氧化铝的材料性质和钝化的机理.其次,指出氧化铝薄膜的优点在于优异的场效应钝化特性和良好的化学钝化性质,因此可以应用于低掺和高掺p型硅表面的钝化.此外,氧化铝薄膜及其叠层还具有良好的热稳定性,符合丝网印刷太阳电池的要求.最后,总结了氧化铝薄膜钝化技术在晶体硅太阳电池中的最新研究动态,指出氧化铝钝化薄膜用于工业生产中存在的问题,并针对这些问题提出了有效的解决方案.

  11. DIFFUSION PROCESS OF CRYSTALLINE SILICON SOLAR CELLS%晶体硅太阳电池扩散工艺研究

    Institute of Scientific and Technical Information of China (English)

    刘金虎; 徐征; 赵谡玲; 刘志平; 李栋才

    2012-01-01

    作为晶体硅太阳电池制作的心脏环节,扩散的效果也就是扩散后方块电阻的均匀性显得尤为重要.影响方块电阻均匀性的主要因素有:大小氮的流量、O2的流量、通源时间、再分布时间和中心温度.通过逐一改变这些因素,分析所得数据,得到一个能有效控制方块电阻大小、使方块电阻均匀性达到最佳的规律:大小氮流量的变化共同影响方块电阻均匀性;方块电阻大小的改变主要靠温度、时间、小氮的流量的改变来调节.通过以上实验规律的研究,便于常规工艺的调试和高方块电阻工艺中高方块电阻的制备和极差的优化.%As the key process of the production of crystalline silicon solar cell, the effect of diffusion or the square resistance's uniformity plays a very important role. The factors affecting the uniformity of the square resistance mainly include the flow rate of high N2, low N2 and O2 , the change of source saturation time and built in time, and the change of central temperature of the furnace. By changing these factors, a law which can effectively control the value of the square resistance and optimize the uniformity of the square resistance can be got. Both high N2 and low N2 can affect the uniformity of the square resistance, while temperature can affect the square resistance a lot.

  12. New Research Progress in Light Induced Degradation of Crystalline Silicon Solar Cell%晶体硅太阳电池光衰减现象研究的新进展

    Institute of Scientific and Technical Information of China (English)

    任先培; 程浩然; 何发林; 陈朝

    2012-01-01

    The PV market has been always dominated by crystalline silicon solar cell, so many attentions have been paid to the research of light induced degradation of crystalline silicon solar celL The worldwide research progress of light induced degradation is reviewed and the mechanisms of light induced degradation by Boz, complexes, FeB pairs and Cu-related defects are introduced. The relationship between the Btfe defect generation rate, deactivation rate and corresponding activation energy and boron concentration, oxygen concentration is introduced in details. Finally the technical solutions for reducing or eliminating light induced degradation are proposed.%晶体硅太阳电池一直占据光伏市场的主导地位,关于其光衰减的研究也因此受到了广泛关注.综合评述了近年来国内外晶体硅太阳电池光衰减现象的研究进展.介绍了硼氧缺陷、铁硼对以及铜相关的缺陷导致光衰减的基本机制,着重阐述了硼氧缺陷的产生率、钝化率以及相应的激活能大小与硼氧含量的关系.最后介绍了减弱或避免光衰减的一些措施.

  13. Innovative technologies for emitter formation of crystalline silicon solar cells using in-line diffusion; Innovative Technologien zur Emittererzeugung fuer kristalline Silizium-Solarzellen mittels Durchlaufdiffusion

    Energy Technology Data Exchange (ETDEWEB)

    Voyer, Catherine

    2009-04-20

    An in-line emitter formation process for crystalline silicon solar cells was developed. The wafers were coated at room temperature with dilute phosphoric acid (2.5 w/w% in water) using ultrasonic spraying and then heated up to temperatures around 900 C in a metal-contamination-free in-line furnace. In the first zones of the furnace, a phosphosilicate glass (PSG) is formed on the silicon surface and serves as the doping source. The PSG thickness was adjusted by varying the flow rate of dilute phosphoric acid to the spray nozzle and took on values appropriate for emitter formation, in the range of {proportional_to}40-120 nm. A surfactant mixture was added to the dilute phosphoric acid in order to obtain complete wetting of the silicon surface. The mixture, which was composed of a hydrocarbon surfactant and of a fluorosurfactant, achieved better wetting properties than would be possible when using only one of the two surfactants. The spray solution containing only the hydrocarbon surfactant achieved a faster drop flattening, while the spray solution containing only the fluorosurfactant achieved a lower static surface tension. The mixture allowed for a combination of these desired properties: The drops coalesced together sufficiently rapidly (before drying) on the silicon surface to form a complete dopant source liquid layer and this layer remains sufficiently homogeneous during the layer drying. The sprayed-on layer is thicker ({proportional_to}15 microns) than the height of the surface texture ({proportional_to}5-10 microns). The liquid strives for a state of equilibrium, a convex meniscus. The topography of the liquid surface at the time at which the increase in viscosity puts an end to the liquid flow is reflected in the topography of the PSG thickness. The corresponding variations in sheet resistance across a wafer are sufficiently small for solar cells. Furthermore, the liquid layer conforms itself, during the drying, to the surface texture on a microscopic scale

  14. Innovative technologies for emitter formation of crystalline silicon solar cells using in-line diffusion; Innovative Technologien zur Emittererzeugung fuer kristalline Silizium-Solarzellen mittels Durchlaufdiffusion

    Energy Technology Data Exchange (ETDEWEB)

    Voyer, Catherine

    2009-04-20

    An in-line emitter formation process for crystalline silicon solar cells was developed. The wafers were coated at room temperature with dilute phosphoric acid (2.5 w/w% in water) using ultrasonic spraying and then heated up to temperatures around 900 C in a metal-contamination-free in-line furnace. In the first zones of the furnace, a phosphosilicate glass (PSG) is formed on the silicon surface and serves as the doping source. The PSG thickness was adjusted by varying the flow rate of dilute phosphoric acid to the spray nozzle and took on values appropriate for emitter formation, in the range of {proportional_to}40-120 nm. A surfactant mixture was added to the dilute phosphoric acid in order to obtain complete wetting of the silicon surface. The mixture, which was composed of a hydrocarbon surfactant and of a fluorosurfactant, achieved better wetting properties than would be possible when using only one of the two surfactants. The spray solution containing only the hydrocarbon surfactant achieved a faster drop flattening, while the spray solution containing only the fluorosurfactant achieved a lower static surface tension. The mixture allowed for a combination of these desired properties: The drops coalesced together sufficiently rapidly (before drying) on the silicon surface to form a complete dopant source liquid layer and this layer remains sufficiently homogeneous during the layer drying. The sprayed-on layer is thicker ({proportional_to}15 microns) than the height of the surface texture ({proportional_to}5-10 microns). The liquid strives for a state of equilibrium, a convex meniscus. The topography of the liquid surface at the time at which the increase in viscosity puts an end to the liquid flow is reflected in the topography of the PSG thickness. The corresponding variations in sheet resistance across a wafer are sufficiently small for solar cells. Furthermore, the liquid layer conforms itself, during the drying, to the surface texture on a microscopic scale

  15. 77 FR 72884 - Crystalline Silicon Photovoltaic Cells and Modules From China

    Science.gov (United States)

    2012-12-06

    ... COMMISSION Crystalline Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the... reason of imports of crystalline silicon photovoltaic cells and modules from China, provided for in... silicon photovoltaic cells and modules from China. Chairman Irving A. Williamson and Commissioner Dean...

  16. Crystalline silicon cell performance at low light intensities

    Energy Technology Data Exchange (ETDEWEB)

    Reich, N.H.; van Sark, W.G.J.H.M.; Alsema, E.A.; Turkenburg, W.C. [Utrecht University, Faculty of Science, Copernicus Institute for Sustainable Development and Innovation, Department of Science, Techonology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Lof, R.W.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Device, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Sinke, W.C. [Energy research Centre of the Netherlands (ECN), P.O. Box 1, 1755 ZG Petten (Netherlands)

    2009-09-15

    Measured and modelled JV characteristics of crystalline silicon cells below one sun intensity have been investigated. First, the JV characteristics were measured between 3 and 1000 W/m{sup 2} at 6 light levels for 41 industrially produced mono- and multi-crystalline cells from 8 manufacturers, and at 29 intensity levels for a single multi-crystalline silicon between 0.01 and 1000 W/m{sup 2}. Based on this experimental data, the accuracy of the following four modelling approaches was evaluated: (1) empirical fill factor expressions, (2) a purely empirical function, (3) the one-diode model and (4) the two-diode model. Results show that the fill factor expressions and the empirical function fail at low light intensities, but a new empirical equation that gives accurate fits could be derived. The accuracy of both diode models are very high. However, the accuracy depends considerably on the used diode model parameter sets. While comparing different methods to determine diode model parameter sets, the two-diode model is found to be preferred in principle: particularly its capability in accurately modelling V{sub OC} and efficiency with one and the same parameter set makes the two-diode model superior. The simulated energy yields of the 41 commercial cells as a function of irradiance intensity suggest unbiased shunt resistances larger than about 10 k{omega} cm{sup 2} may help to avoid low energy yields of cells used under predominantly low light intensities. Such cells with diode currents not larger than about 10{sup -9} A/cm{sup 2} are excellent candidates for Product Integrated PV (PIPV) appliances. (author)

  17. 77 FR 4764 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-01-31

    ... International Trade Administration Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules... duty investigation of crystalline silicon photovoltaic cells, whether or not assembled into modules, ] from the People's Republic of China, to no later than February 13, 2012.\\1\\ \\1\\ See Crystalline...

  18. A broadband-sensitive upconverter La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}:Er,Ni,Nb for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Mizuno, Shintaro; Luitel, Hom Nath; Tani, Toshihiko [Toyota Central Research and Development Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

    2016-01-25

    We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er{sup 3+}-doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er{sup 3+} ions. Ni{sup 2+} ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er{sup 3+} absorption band and transfer the energies to the Er{sup 3+} emitters, with La(Ga,Sc)O{sub 3} as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni{sup 2+} absorption band for sufficient energy transfer. Co-doping with Nb{sup 5+} ions is needed for charge balance to introduce divalent Ni{sup 2+} ions into the trivalent Ga{sup 3+} and Sc{sup 3+} sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er{sup 3+} ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni{sup 2+} absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}. The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones.

  19. 77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

    Science.gov (United States)

    2012-06-13

    ... silicon photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon... COMMISSION Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of... crystalline silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00,...

  20. 单晶硅小金字塔绒面及其对太阳电池性能的影响%Small Pyramids Texture and Performance of Mono-crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    梁学勤; 冯成坤; 陈奕峰; 沈辉; 闻立时

    2011-01-01

    TMAH(tetramethyl ammonium hydroxide) and NaOH solution were used to etch mono-crystalline silicon wafer to form small size pyramids, and the average sizes are smaller than 2μm. Before texturing, saw-damage etching was performed with NaOH and HF/HNO3 solution, resulting in a fairly flat surface and a surface covered with pits respectively. The outcome of the surface texturing is related to the original surface morphology of the wafer. It is found that, with etching saw-damage with HF/HNO3 solution, the wafer formed regular and small pyramids after texturing. Ⅰ-Ⅴ measurements are carried out to compare the performance of solar cells textured with TMAH and NaOH. The line contact resistance is related to size of pyramids. Small pyramids are necessarily to produce high efficiency crystalline silicon solar cells using laser technology.%研究了TMAH(四甲基氢氧化铵)和NaOH腐蚀液在制作单晶硅片小绒面中的应用,制作出平均尺寸小于2μm的金字塔绒面;比较了不同硅片预处理(酸减薄、碱减薄、原片)对金字塔绒面尺寸、均匀性、覆盖率以及反射率的影响以及电池的I-V性能,分析了不同绒面结构对接触电阻的影响;指出单晶硅小金字塔绒面是使用激光制备高效晶体硅太阳电池的关键.

  1. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    Science.gov (United States)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-12-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

  2. Optimized analysis and experimental study for two-layer contact of crystalline silicon solar cells%晶体硅太阳电池双层电极优化分析与实验研究

    Institute of Scientific and Technical Information of China (English)

    李涛; 周春兰; 刘振刚; 赵雷; 李海玲; 刁宏伟; 王文静

    2012-01-01

    相对于单层电极结构,优化的前表面双层电极能够明显减小功率损失,改善晶体硅太阳电池的电学特性.本文对晶体硅太阳电池的双层电极进行了优化分析和实验研究.通过扫描电子显微镜观测将双层电极的截面抽象为更接近于实际的半椭圆型,建立了太阳电池前表面的双层电极模型,理论分析了双层电极的电学损失和光学损失.结合丝网印刷后光诱导电镀太阳电池的实验,得到了理论和实验上的最优化光诱导电镀增厚电极厚度与丝网印刷电极宽度的关系.所得到的理论和实验结果符合良好.由于并不涉及电极制备的具体技术,双层电极理论模型普遍适用于多种类型的双层电极结构.%Compared with single-layer contact,optimized two-layer contact of front side could diminish power losses distinctly and improve the electrical performance of crystalline silicon solar cell.In this paper,the optimized analysis and experimental study for two-layer contact of crystalline silicon solar cell are carried out.The model of two-layer contact is established by abstracting the crosssection of two-layer contact into semi-elliptical shape closer to the realistic situation according to the SEM observation.The electrical losses and the optical losses of two-layer contact are analyzed in theory.In combination with experimental screen-printed contact thickened by light-induced electroplating solar cell,the relationship between the optimum thickening contact thickness by light-induced electroplating and the screen-printed contact width is achieved in theory and experiment.The corresponding theory and experimental results are in good agreement with each other.Due to involving no concrete technology of contact preparation,the theoretical model of two-layer contact is generally appticable for many types of two-layer contact structures in consequence.

  3. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    Science.gov (United States)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  4. Photovoltaic solar panels of crystalline silicon: Characterization and separation.

    Science.gov (United States)

    Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

    2016-03-01

    Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C.

  5. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  6. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  7. Research and Development of New High Temperature Sintering Furnace for Crystalline Silicon Solar Cell%新型晶硅电池快速烧结炉的研制

    Institute of Scientific and Technical Information of China (English)

    邓斌; 郭立; 万喜新; 佘鹏程

    2012-01-01

    This paper introduces the new high temperature sintering furnace, put forward to get used to the high resistance technology of rapid sintering furnace in the furnace body structure characteristics, temperature control, rapid cooling and so on several aspects of the design, to improve the conversion efficiency of crystalline silicon cells, reduce the production cost. According to the design and production of the new high temperature sintering furnace, used in industrial silicon solar cell of high resistance process, meet the technological requirement, obtained better economic benefits.%介绍了新型晶硅电池快速烧结炉的研制,提出了适应高阻工艺的快速烧结炉在炉体结构特点、温度控制方式、快速降温冷却等几个方面的改进设计,来提高晶硅电池的转换效率,降低生产成本。根据此设计生产的新型晶硅电池快速烧结炉,应用于产业化晶硅电池的高阻工艺流程中,满足工艺要求,取得了较好的经济效益。

  8. The economic payoff for a state-of-the-art high-efficiency flat-plate crystalline silicon solar cell technology

    Science.gov (United States)

    Bickler, Donald B.; Callaghan, W. T.

    In 1986 during the flat-plate solar array project, silicon solar cells 4.0 sq cm in area were fabricated at the Jet Propulsion Laboratory (JPL) with a conversion efficiency of 20.1 percent (AM1.5-global). Sixteen cells were processed with efficiencies measuring 19.5 percent (AM1.5 global) or better. These cells were produced using refined versions of conventional processing methods, aside from certain advanced techniques that bring about a significant reduction in a major mechanism (surface recombination) that limits cell efficiency. Wacker Siltronic p-type float-zone 0.18-ohm-cm wafers were used. Conversion efficiencies in this range have previously been reported by other researchers, but generally on much smaller (0.5 vs. 4.0 cm) devices which have undergone sophisticated and costly processing steps. An economic analysis is presented of the potential payoffs for this approach, using the Solar Array Manufacturing Industry Costing Standards (SAMICS) methodology. The process sequence used and the assumptions made for capturing the economies of scale are presented.

  9. Optimization of Al2O3/SiNx stacked antireflection structures for N-type surfacepassivated crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    Wu Dawei; Jia Rui; Ding Wuchang; Chen Chen; Wu Deqi; Chen Wei; Li Haofeng; Yue Huihui; Liu Xinyu

    2011-01-01

    In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al2O3/SiNx layer.The effect of SiNx layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al2O3/SiNx layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiNx layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.

  10. Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization

    Energy Technology Data Exchange (ETDEWEB)

    Grupp Mueller, Guenther [SolarWorld Industries America, Hillsboro, OR (United States); Herfurth, Hans [Fraunhofer Center for Laser Technology (FhCLT), Plymouth, MI (United States); Dunham, Scott [Univ. of Washington, Seattle, WA (United States); Xu, Baomin [PARC (Palo Alto Research Center), Palo Alto, CA (United States)

    2013-11-15

    Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ‘economies of scale’ benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (FPACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell – while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it’s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate.

  11. 晶体硅太阳电池减反射膜的研究%Research on Antireflection Coating of Crystalline Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    赵萍; 麻晓园; 邹美玲

    2011-01-01

    在太阳电池表面形成一层减反射薄膜是提高太阳电池的光电转换效率比较可行且降低成本的方法.应用PECVD(等离子体增强化学气相沉积)系统,采用SiH4和NH3气源以制备氮化硅薄膜.研究探索了PECVD生长氮化硅薄膜的基本物化性质以及在沉积过程中反应压强、反应温度、硅烷氨气流量比和微波功率对薄膜性质的影响.通过大量实验,分析了氮化硅薄膜的相对最佳沉积参数,并得出制作减反射膜的优化工艺.%Depositing antireflection films on solar cells is the most doable way to improve conversion efficiency of solar cells, which can also debase the cost of solar cells. The PECVD (Plasma Enhanced Chemical Vapor Deposition) system and the reactants of silane and ammonia are applied to fabricating SiN thin film. The effects of reaction temperature, the flow ratio of silane over ammoma and the microwave power on the film character are researched. The effects of post deposition annealing on solar cell materials are also discussed primarily. The optimal relative deposition parameters are investigated and the optimized processes of antireflection fabrication are attained with plenty of experienments.

  12. Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.

    Science.gov (United States)

    Jung, Junhee; Kim, Sunbo; Park, Jinjoo; Shin, Chonghoon; Pham, Duy Phong; Kim, Jiwoong; Chung, Sungyoun; Lee, Youngseok; Yi, Junsin

    2015-10-01

    This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.

  13. Sintering Processes Optimization of Crystalline Silicon Solar Cell%晶体硅太阳电池烧结工艺优化

    Institute of Scientific and Technical Information of China (English)

    高华; 杨乐; 张闻斌; 李杏兵

    2012-01-01

      金属电极与硅的接触电阻是影响太阳电池填充因子和短路电流进而影响光电转换效率的重要因素之一。首先对晶体硅太阳电池的烧结工艺进行了优化,利用平台式烧结温度曲线代替陡坡式烧结温度曲线。然后,采用Core Scan方法测试工艺优化前后晶体硅太阳电池丝网印刷烧结银电极与硅之间的接触电阻Rc,并测试了工艺优化前后电池片的IV特性。数据显示烧结工艺优化后可减小银电极与硅的接触电阻,从而提高了太阳电池的光电转化效率。平台式烧结温度曲线更适用浅结高方阻的电池结构。%  The contact resistance between a metal electrode and silicon is one of the important factors which influence solar cell fill factor, short circuit current and electro-optic conversion efficiency. By optimizing the sin⁃tering technique of crystal silicon solar cell, the platform-based sintering temperature curve with steep is replaced by the sintering temperature curve. The Core Scan method is used to test the contact resistance Rc between sinter⁃ing silver electrode of crystal silicon solar cell and silicon before and after technique optimizing process. And IV characteristic battery plate is tested before and after technique optimizing process. The test results show that the optimized sintering technique can reduce the contact resistance between silver electrode and silicon. So elec⁃tro-optic conversion efficiency of solar cell is improved. The platform-based sintering temperature curve is much more suitable for high efficiency shallow junction silicon cell structure.

  14. Gravure-Offset Printed Metallization of Multi-Crystalline Silicon Solar Cells with Low Metal-Line Width for Mass Production.

    Science.gov (United States)

    Lee, Jonghwan; Jeong, Chaehwan

    2016-05-01

    The gravure offset method has been developed toward an industrially viable printing technique for electronic circuitry. In this paper, a roller type gravure offset manufacturing process was developed to fabricate fine line for using front electrode for solar cells. In order to obtain the optimum metallization printing lines, thickness of 20 μm which is narrow line is required. The main targets are the reduction of metallized area to reduce the shading loss, and a high conductivity to transport the current as loss free as possible out of the cell. However, it is well known that there is a poor contact resistance between the front Ag electrode and the n(+) emitter. Nickel plating was conducted to prevent the increase of contact resistance and the increase of fill factor (FF). The performance of n-Si/Ag (seed layer)/Ni solar cells were observed in 609 mV of open circuit voltage, 35.54 mA/cm2 of short circuit current density, 75.75% of fill factor, and 16.04% of conversion efficiency.

  15. Technology development for crystalline silicon thin-film solar cells (TEKSI). Final report; Technologieentwicklung fuer kristalline Silizium-Duennschicht-Solarzellen (TEKSI). Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W.; Hurrle, A.; Bau, S.; Eyer, A.; Haas, F.; Huljic, D.; Kieliba, T.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Preu, R.; Reber, S.; Rentsch, J.; Schaefer, S.; Schetter, C.; Schillinger, N.; Warta, W.; Zimmermann, W.

    2002-10-01

    The results of a project aimed at the development of crystalline solar wafers are presented. All process stages were reviewed in detail with a view to industrial fabrication. This included also the further development of machinery, e.g. for selective zone melting recrystallisation, CVD silicon deposition, and characterisation of deposited films and solar cells. Not all the envisaged goals were achieved. For example, efficiencies up to 17.6 percent were possible on direct epitactic, highly doped CZ-Si substrates and with a high-efficiency process, but the normal efficiencies of solar cells on SSP or on ceramic substrates were in the range of 8-11 percent. This underlines the need for further research on the development of appropriate substrates with reproducible properties. [German] Im vorliegenden Bericht werden die Ergebnisse eines mehrjaehrigen Projekts zur Entwicklung der kristallinen Silizium-Duennschichtsolarzelle (KSD-Solarzelle) vorgestellt. Die Arbeiten waren eine konsequente Fortsetzung der bereits in einem Vorgaengerprojekt (FKZ 0328986B) bearbeiteten Themen. Alle zur Herstellung solcher Solarzellen noetigen Prozessschritte im Rahmen des am Fraunhofer ISE verfolgten Hochtemperaturpfads wurden detailliert untersucht, insbesondere im Hinblick auf eine industrielle Fertigung. Ein wesentlicher Teil der Arbeiten befasste sich deshalb auch mit der Weiterentwicklung von Geraeten, so z. B. fuer die Zonenschmelzrekristallisation, fuer die Silizumabscheidung mittels CVD-Verfahren und fuer die Charakterisierung abgeschiedener Schichten und Solarzellen. Nicht alle der ehrgeizigen Projektziele konnten erreicht werden. Auf direkt epitaxierten, hochdotierten CZ-Si-Substraten konnten zwar mit einem High-Efficiency-Prozess Wirkungsgrade bis zu 17.6%, mit fertigungsrelevanter Siebdrucktechnologie bis 13% erzielt werden. Die Wirkungsgrade von Solarzellen auf SSP oder auf Keramiksubstraten lagen aber alle im Bereich von 8-11%. Dies zeigt deutlich, dass die Entwicklung

  16. Correlation between the fine structure of spin-coated PEDOT:PSS and the photovoltaic performance of organic/crystalline-silicon heterojunction solar cells

    Science.gov (United States)

    Funda, Shuji; Ohki, Tatsuya; Liu, Qiming; Hossain, Jaker; Ishimaru, Yoshihiro; Ueno, Keiji; Shirai, Hajime

    2016-07-01

    We investigated the relationship between the fine structure of spin-coated conductive polymer poly(3,4-ethylenedioxythiphene):poly(styrene sulfonate) (PEDOT:PSS) films and the photovoltaic performance of PEDOT:PSS crystalline-Si (PEDOT:PSS/c-Si) heterojunction solar cells. Real-time spectroscopic ellipsometry revealed that there were two different time constants for the formation of the PEDOT:PSS network. Upon removal of the polar solvent, the PEDOT:PSS film became optically anisotropic, indicating a conformational change in the PEDOT and PSS chain. Polarized Fourier transform infrared attenuated total reflection absorption spectroscopy and Raman spectroscopy measurements also indicated that thermal annealing promoted an in-plane π-conjugated Cα = Cβ configuration attributed to a thiophene ring in PEDOT and an out-of-plane configuration of -SO3 groups in the PSS chain with increasing composition ratio of oxidized (benzoid) to neutral (quinoid) PEDOT, Iqui/Iben. The highest power conversion efficiency for the spin-coated PEDOT:PSS/c-Si heterojunction solar cells was 13.3% for Iqui/Iben = 9-10 without employing any light harvesting methods.

  17. Dynamic magnetron sputter process for front metallisation of crystalline silicon solar cells; Dynamisches Magnetron-Sputterverfahren zur Vorderseitenmetallisierung kristalliner Silicium-Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Reinwand, Dirk

    2012-07-01

    An alternative high-efficiency front metallisation concept for industrial applications was to be developed. Development goals were, e.g., reduced shading and low contact resistance between the metal and semiconductor. Another advantage is the high flexibility with regard to metals, so that specific demands can be met (e.g. diffusion barrier, adhesive properties). Apart from various methods for characterisation of the layer properties (structure, layer thickness, resistance), also various aspects of energy influx into the substrate are discussed in detail. The generation of soft X-radiation by dynamic magnetron sputtering is investigated, and the existence of soft X-radiation could be proved for the first time using diode current measurement and flat field spectroscopy. Until recently, when SiO2 was used as passivation layer for solar cells, damage was attributed to short-wave radiation. Now, it could be proved that the SiO2 is damaged by the soft X-radiation observed. On the basis of the findings, the first high-efficiency solar cells with sputtered and galvanically reinforced front contacts were constructed. Efficiencies up to 21.1 % were obtained, which illustrates the high potential of the magnetron sputtering process for front metallisation of crystalline Si solar cells. [German] Diese Arbeit beschaeftigt sich mit dem dynamischen Magnetron-Sputterverfahren zur Vorderseitenmetallisierung kristalliner Silicium-Solarzellen. Hierbei sollte ein alternatives, industrietaugliches Vorderseitenmetallisierungskonzept mit hohem Wirkungsgradpotential entwickelt werden. Vorteile gegenueber der Siebdrucktechnologie (als Standardstandverfahren zur Vorderseiten-metallisierung fuer Industriesolarzellen) ergeben sich beispielsweise aus einer reduzierten Abschattung und geringen Kontaktwiderstaenden zwischen Metall und Halbleiter. Ein weiterer Vorteil bei der Verwendung der Kathodenzerstaeubung zur Abscheidung metallischer Schichten ist die hohe Flexibilitaet bezueglich der Wahl

  18. A12o3钝化及其在晶硅太阳电池中的应用%The passivation of A1203 and its applications in the crystalline silicon solar cell

    Institute of Scientific and Technical Information of China (English)

    张祥; 刘邦武; 夏洋; 李超波; 刘杰; 沈泽南

    2012-01-01

    The material characteristics and one of the preparation methods, atomic layer deposition of A12 O3 are introduced. The passivation mechanisms (chemical passivation and field-effect passivation) of A1203 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of A12 Oa passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the A1203 passivation process and the application to industry production are proposed.%介绍了A1203的材料性质及其原子层沉积制备方法,详细阐述了该材料的钝化机制(化学钝化和场效应钝化),并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案.概述了Al203钝化在晶体硅太阳电池中的应用,主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池.最后,对A1203钝化工艺的未来研究方向和大规模的工业应用进行了展望.

  19. 76 FR 66748 - Crystalline Silicon Photovoltaic Cells and Modules From China; Institution of Antidumping and...

    Science.gov (United States)

    2011-10-27

    ... COMMISSION Crystalline Silicon Photovoltaic Cells and Modules From China; Institution of Antidumping and... indication that an industry in the United States is materially injured or threatened with material injury, or the establishment of an industry in the United States is materially retarded, by reason of imports...

  20. Broadband down-conversion based near infrared quantum cutting in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tai, Yuping, E-mail: yupingtai@126.com [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science, Northwest University, Xi’an 710069 (China); Zheng, Guojun, E-mail: zhengguojun88@126.com [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science, Northwest University, Xi’an 710069 (China); Wang, Hui, E-mail: huiwang@nwu.edu.cn [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science, Northwest University, Xi’an 710069 (China); National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base, National Photoelectric Technology and Functional Materials & Application of International Science and Technology Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi' an 710069 (China); Bai, Jintao, E-mail: baijt@nwu.edu.cn [National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base, National Photoelectric Technology and Functional Materials & Application of International Science and Technology Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi' an 710069 (China)

    2015-03-15

    Near infrared (NIR) quantum cutting involving the down conversion of an absorbed visible photon to emission of two NIR photons was achieved in SrAl{sub 2}O{sub 4}:0.01Eu{sup 2+}, xYb{sup 3+} (x=0, 1, 2, 5, 10, 20, 30 mol%) samples. The photoluminescence properties of samples in visible and NIR regions were measured to verify the energy transfer (ET) from Eu{sup 2+} to Yb{sup 3+}. The results demonstrated that Eu{sup 2+} was an efficient sensitizer for Yb{sup 3+} in the SrAl{sub 2}O{sub 4} host lattice. According to Gaussian fitting analysis and temperature-dependent luminescence experiments, the conclusion was drawn that the cooperative energy transfer (CET) process dominated the ET process and the influence of charge transfer state (CTS) of Yb{sup 3+} could be negligible. As a result, the high energy transfer efficiency (ETE) and quantum yield (QY) have been acquired, the maximum value approached 73.68% and 147.36%, respectively. Therefore, this down-conversion material has potential application in crystalline silicon solar cells to improve conversion efficiency. - Graphical abstract: Near infrared quantum cutting was achieved in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} samples. The cooperative energy transfer process dominated energy transfer process and high energy transfer efficiency was acquired. - Highlights: • The absorption spectrum of Eu{sup 2+} ion is strong in intensity and broad in bandwidth. • The spectra of Eu{sup 2+} in SrAl{sub 2}O{sub 4} lies in the strongest region of solar spectrum. • The cooperative energy transfer (CET) dominated the energy transfer process. • The domination of CET is confirmed by experimental analysis. • SrAl{sub 2}O{sub 4}:Eu{sup 2+},Yb{sup 3+} show high energy transfer efficiency and long lifetime.

  1. Investigation of anti-reflection properties of crystalline silicon solar cell surface silicon nanowire arrays∗%晶体硅太阳电池表面纳米线阵列减反射特性研究

    Institute of Scientific and Technical Information of China (English)

    梁磊†; 徐琴芳; 忽满利; 孙浩; 向光华; 周利斌

    2013-01-01

      为增强晶体硅太阳电池的光利用率,提高光电转换效率,研究了硅纳米线阵列的光学散射性质.运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算,用田口方法对硅纳米线阵列的表面传输效率进行了优化.结果表明,当硅纳米线阵列的周期为50 nm,占空比为0.6,高度约1000 nm时减反射效果最佳;该结构在上述波段的平均反射率约为2%,且在较大入射角度范围保持不变.采用金属催化化学腐蚀法,于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53,高度为500 nm的硅纳米线阵列结构,其反射率的实验测试结果与计算模拟值相符,在上述波段的平均反射率为4%—5%,相对于单晶硅35%左右的反射率,减反射效果明显.这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失,提高光电转换效率.%In order to trap more sunlight onto the crystalline silicon solar cell and improve the photo-electric conversion efficiency, it is very important to study the optical scattering properties of silicon nanowire arrays on silicon wafer. The rigorous coupled wave analysis method is used for optical simulation, and the Taguchi method is used for efficient optimization. The simulation results show that at the above-mentioned wavelengths the reflectance of the optimized structure is less than 2%, and also able to achieve the wide-angle antireflection. At room temperature and ambient pressure, the silicon nanowire arrays each with a period of 50 nm, duty ratio of 0.6 and height of 1000 nm are successfully prepared on mono-crystalline Si wafers using a novel metal-catalyzed chemical etching technique, the reflectance test results are consistent with simulation values. The average reflectance of the optimized structure over the above-mentioned wavelength range is 4%–5%, showing that the antireflection effect is obvious

  2. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  3. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  4. Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application

    Energy Technology Data Exchange (ETDEWEB)

    Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

    2010-12-06

    The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015

  5. University Crystalline Silicon Photovoltaics Research and Development

    Energy Technology Data Exchange (ETDEWEB)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

    2008-08-18

    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  6. Characterization of cell mismatch in a multi-crystalline silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    Crozier, J.L., E-mail: s207094248@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    In this study the causes and effects of cell mismatch were identified in a multi-crystalline silicon photovoltaic module. Different techniques were used to identify the causes of the mismatch, including Electroluminescence (EL) imaging, Infrared (IR) imaging, current-voltage (I-V) characteristics, worst-case cell determination and Large Area Laser Beam Induced Current (LA-LBIC) scans. In EL images the cracked cells, broken fingers and material defects are visible. The presence of poorly contacted cells results in the formation of hot-spots. LA-LBIC line scans give the relative photoresponse of the cells in the module. However, this technique is limited due to the penetration depth of the laser beam. The worst case cell determination compares the I-V curves of the whole module with the I-V curve of the module with one cell covered, allowing the evaluation of the performance of each cell in a series-connected string. These methods allowed detection of the poorly performing cells in the module. Using all these techniques an overall view of the photoresponse in the cells and their performance is obtained.

  7. Optimization of Al{sub 2}O{sub 3}/SiN{sub x} stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu Dawei; Jia Rui; Ding Wuchang; Chen Chen; Wu Deqi; Chen Wei; Li Haofeng; Yue Huihui; Liu Xinyu, E-mail: wudawei@ime.ac.cn [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2011-09-15

    In the case of N-type solar cells, the anti-reflection property, as one of the important factors to further improve the energy-conversion efficiency, has been optimized using a stacked Al{sub 2}O{sub 3}/SiN{sub x} layer. The effect of SiN{sub x} layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement. In the stacked Al{sub 2}O{sub 3}/SiN{sub x} layers, results demonstrated that the surface reflection property can be effectively optimized by adding a SiN{sub x} layer, leading to the improvement in the final photovoltaic characteristic of the N-type solar cells. (semiconductor devices)

  8. Fabrication of interdigitated back-contact silicon heterojunction solar cells on a 53-µm-thick crystalline silicon substrate by using the optimized inkjet printing method for etching mask formation

    Science.gov (United States)

    Takagishi, Hideyuki; Noge, Hiroshi; Saito, Kimihiko; Kondo, Michio

    2017-04-01

    Inkjet-printing-based fabrication process of the interdigitated back-contact silicon heterojunction solar cells has the potential to reduce the manufacturing costs because of its low machine and material costs and its applicability to thinner fragile silicon substrates than 100 µm. In this study, ink and printing parameters were investigated to obtain the desirable fine patterns and the resultant accuracy of the linewidths was less than ±0.05 mm on a flat surface. The completed cells using inkjet-printing showed almost the same performance of that fabricated by photolithography. In addition, flexible and free-standing cell on a 53-µm-thick Si substrate has been successfully fabricated.

  9. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  10. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  11. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  12. Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm

    Science.gov (United States)

    Mayer, Alexandre; Muller, Jérôme; Herman, Aline; Deparis, Olivier

    2015-08-01

    We developed a genetic algorithm to achieve optimal absorption of solar radiation in nano-structured thin films of crystalline silicon (c-Si) for applications in photovoltaics. The device includes on the front side a periodic array of inverted pyramids, with conformal passivation layer (a-Si:H or AlOx) and anti-reflection coating (SiNx). The device also includes on the back side a passivation layer (a-Si:H) and a flat reflector (ITO and Ag). The geometrical parameters of the inverted pyramids as well as the thickness of the different layers must be adjusted in order to maximize the absorption of solar radiations in the c-Si. The genetic algorithm enables the determination of optimal solutions that lead to high performances by evaluating only a reduced number of parameter combinations. The results achieved by the genetic algorithm for a 40μm thick c-Si lead to short-circuit currents of 37 mA/cm2 when a-Si:H is used for the front-side passivation and 39.1 mA/cm2 when transparent AlOx is used instead.

  13. The Design of the Firing Furnace for Crystalline Silicon Solar Cells%晶体硅太阳能电池烧结工艺用炉体热功率设计

    Institute of Scientific and Technical Information of China (English)

    郭立; 李克; 刘良玉

    2013-01-01

    T he principle and the sintering process of solar cells are introduced in this paper firstly. T he distribution of tem perature zoom and the internal structure of sintering furnace are determ ined by discussing the associated factors of the sintering process w ith the form er process and com bining w ith the tem perature curve requirem ents of sintering process . T he furnace pow er distribution has been calculated by the therm odynam ic theory,and the key design param eters of the sintering furnace have been determ inated in order to m atching the requirem ent of the best sintering process.%介绍太阳电池的原理及烧结工艺,通过研究烧结工艺与前道工序的关联因素,结合烧结工艺对温度曲线的要求,确定烧结炉的内部结构及温区分布,最后利用热工理论计算,得出炉体功率分布,找到最佳的烧结工艺状态,进而确定炉体的设计关键参数。

  14. Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells.

    Science.gov (United States)

    Hussain, Shahzada Qamar; Oh, Woong-Kyo; Kim, Sunbo; Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Lee, Youngseok; Dao, Vinh Ai; Velumani, S; Yi, Junsin

    2014-12-01

    Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 x 10(-4) Ω x cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ(ITO)) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The Φ(ITO) increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

  15. 双面单晶硅光伏电池技术及工艺探索%Exploration of Crystalline Silicon Bifacial Photovoltaic Cell Technology and Process

    Institute of Scientific and Technical Information of China (English)

    张中伟; 张小宾; 侯泽荣; 黄仑

    2014-01-01

    对双面晶体硅电池技术和工艺做了初步的阐述,并以双面P型单晶硅电池为研究对象,对双面电池制程中的硼扩散、边缘刻蚀、硼扩散面钝化几个关键技术和工艺展开研究和探索,得出其中工艺参数与电池性能之间的相互联系,实验制作得到的P型双面电池片最高综合效率达20.04%。这些技术和制备工艺流程对于未来高效晶硅电池的研发和生产具有重要的参考价值。%This paper introduces the bifacial crystalline silicon photovoltaic cell technology and production process, using P type monocrystalline silicon bifacial solar cell as research object, the introduction is follwed by investigations on such key technical aspects and processes such as boron diffusion, edge isolation etching and boron diffused surface passivation as well as study on the relationship between process parameters and cell performance. The results reveal that the best bifacial cell fabricated in experiments had a combined efficiency of 20. 04%, Which are valuable for further high efficient crystalline silicon solar cell research and production.

  16. Research on anti-PID performance of double-layer SiN film poly-crystalline silicon solar cell%双层SiN 膜多晶硅太阳电池抗PID性能研究

    Institute of Scientific and Technical Information of China (English)

    罗旌旺; 王祺; 芮春保; 孔凡建

    2014-01-01

    Double-layer SiN film poly-crystal ine silicon solar cel was the research point. Different refractive index and thickness double-layer SiN film solar cel by modifying PECVD process were prepared. The cel s with glass, EVA, backsheet etc were encapsulated. PID (Potential Induced Degradation) test at 85℃, 85%RH was conducted. The results show (1)that the cel s with a low refractive index of outer SiNx layer cause serious PID effect regardless of the refractive index or thickness of inner SiN layer;(2), but as the outer layer refractive index increasing the cel s PID effects decreased conspicuously, the cel s with a outer layer refractive index≥2.15 past PID 600 h test with a power loss less than 5%;(3) compared to conventional cel , double-layers SiN film anti-PID solar cel efficiency is a slightly lower, but the cel to module encapsulation power loss is smal er and its module power is equivalent to conventional cel 's. Therefore, the application of this anti-PID solar cel is promising.%以双层SiN 膜多晶硅太阳电池为研究对象,通过调整PECVD工艺参数制备不同折射率和厚度的双层氮化硅减反射膜太阳电池,并用玻璃、EVA和背板等将电池片封装成光伏组件,进行85℃、85%RH条件下组件电势诱导衰减(PID)实验。研究结果表明:(1)改变内层折射率和厚度保持外层较低的折射率时,双层氮化硅膜太阳电池均会发生严重的PID效应;(2)但随着外层折射率提高,电池PID效应显著减小,外层折射率≥2.15的电池PID实验600 h功率衰减小于5%;(3)双层氮化硅膜抗PID太阳电池的转化效率略低于普通太阳电池,但其组件的封装损失较小,与普通电池的组件功率相当,因此具有很好的应用前景。

  17. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film sili

  18. COMBINED EFFECT OF MECHANICAL GROOVING AND STAIN-ETCHED SURFACE ON OPTICAL AND ELECTRICAL PROPERTIES OF CRYSTALLINE SILICON SUBSTRATES

    OpenAIRE

    AHMED ZARROUG; LOTFI DERBALI; RACHID OUERTANI; WISSEM DIMASSI; HATEM EZZAOUIA

    2014-01-01

    This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made...

  19. Basic research challenges in crystalline silicon photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Werner, J.H. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    1995-08-01

    Silicon is abundant, non-toxic and has an ideal band gap for photovoltaic energy conversion. Experimental world record cells of 24 % conversion efficiency with around 300 {mu}m thickness are only 4 % (absolute) efficiency points below the theoretical Auger recombination-limit of around 28 %. Compared with other photovoltaic materials, crystalline silicon has only very few disadvantages. The handicap of weak light absorbance may be mastered by clever optical designs. Single crystalline cells of only 48 {mu}m thickness showed 17.3 % efficiency even without backside reflectors. A technology of solar cells from polycrystalline Si films on foreign substrates arises at the horizon. However, the disadvantageous, strong activity of grain boundaries in Si could be an insurmountable hurdle for a cost-effective, terrestrial photovoltaics based on polycrystalline Si on foreign substrates. This talk discusses some basic research challenges related to a Si based photovoltaics.

  20. 77 FR 17439 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

    Science.gov (United States)

    2012-03-26

    ... producers/exporters and selected Changzhou Trina Solar Energy Co., Ltd. (Trina Solar) and Wuxi Suntech Power... non-market economies (NMEs).\\4\\ On January 6, 2012, Trina Solar, Wuxi Suntech, and other interested... Determination Calculations for Changzhou Trina Solar Energy Co., Ltd.,'' March 19, 2012...

  1. Performance characterization of thin-film-silicon based solar modules under clouded and clear sky conditions in comparison to crystalline silicon modules

    Science.gov (United States)

    Weicht, J. A.; Rasch, R.; Behrens, G.; Hamelmann, F. U.

    2016-07-01

    For a precise prediction of the energy yield of amorphous ( a-Si) and amorphous-microcrystalline tandem ( a-Si/ μc-Si) thinfilm-silicon photovoltaic (PV) modules it is important to know their performance ratio under different light conditions. The efficiency of solar modules is an important value for the monitoring and planning of PV-systems. The efficiency of a-Si solar modules shows no significant changes in the performance ratio at clouded or clear sky conditions. The efficiency of crystalline silicon-based ( c-Si) and a-Si/ μc-Si solar modules shows a lower efficiency for fully clouded conditions without direct irradiation compared to conditions with direct irradiation (clear sky). [Figure not available: see fulltext.

  2. Crystalline silicon photovoltaics via low-temperature TiO 2/Si and PEDOT/Si heterojunctions

    Science.gov (United States)

    Nagamatsu, Ken Alfred

    The most important goals in developing solar cell technology are to achieve high power conversion efficiencies and lower costs of manufacturing. Solar cells based on crystalline silicon currently dominate the market because they can achieve high efficiency. However, conventional p-n junction solar cells require high-temperature diffusions of dopants, and conventional heterojunction cells based on amorphous silicon require plasma-enhanced deposition, both of which can add manufacturing costs. This dissertation investigates an alternative approach, which is to form crystalline-silicon-based solar cells using heterojunctions with materials that are easily deposited at low temperatures and without plasma enhancement, such as organic semiconductors and metal oxides. We demonstrate a heterojunction between the organic polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT), and crystalline silicon, which acts as a hole-selective contact and an alternative to a diffused p-n junction. We also present the use of a heterojunction between titanium dioxide and crystalline silicon as a passivating electron-selective contact. The Si/TiO2 heterojunction is demonstrated for the first time as a back-surface field in a crystalline silicon solar cell, and is incorporated into a PEDOT/Si device. The resulting PEDOT/Si/TiO2 solar cell represents an alternative to conventional silicon solar cells that rely on thermally-diffused junctions or plasma-deposited heterojunctions. Finally, we investigate the merits of using conductive networks of silver nanowires to enhance the photovoltaic performance of PEDOT/Si solar cells. The investigation of these materials and devices contributes to the growing body of work regarding crystalline silicon solar cells made with selective contacts.

  3. Formation of thin-film crystalline silicon on glass observed by in-situ XRD

    NARCIS (Netherlands)

    Westra, J.M.; Vavrunkova, V.; Sutta, P.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2010-01-01

    Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC).

  4. Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, S.; Yan, F.; Dorn, D.; Zaunbrecher, K.; Al-Jassim, M.; Sidelkheir, O.; Ounadjela, K.

    2012-06-01

    Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect band images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.

  5. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  6. Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-05-01

    The NREL "black silicon" nanocatalytic wet-chemical etch is an inexpensive, one-step method to minimize reflections from crystalline silicon solar cells. The technology enables high-efficiency solar cells without the use of expensive antireflection coatings.

  7. Method of manufacturing a hybrid emitter all back contact solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Loscutoff, Paul; Rim, Seung

    2017-02-07

    A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

  8. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.|info:eu-repo/dai/nl/375268456; van Sark, W.G.J.H.M.|info:eu-repo/dai/nl/074628526; Schropp, Ruud; Faaij, A.

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  9. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.|info:eu-repo/dai/nl/074628526; Schropp, Ruud; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  10. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  11. Prediction model for the diffusion length in silicon-based solar cells

    Institute of Scientific and Technical Information of China (English)

    Cheknane A; Benouaz T

    2009-01-01

    d to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

  12. Al纳米颗粒增强微晶硅薄膜太阳电池光吸收的模拟研究∗%Numerical simulation of light absorption enhancement in micro crystalline silicon solar cells with Al nanoparticle arrays

    Institute of Scientific and Technical Information of China (English)

    丁东; 杨仕娥; 陈永生; 郜小勇; 谷锦华; 卢景霄

    2015-01-01

    利用价格低廉、性能优良的金属纳米颗粒增强太阳电池的光吸收具有广阔的应用前景。通过建立三维数值模型,模拟了微晶硅薄膜电池前表面周期性分布的Al纳米颗粒阵列对电池光吸收的影响,并对其结构参数进行了优化。模拟结果表明:对于球状Al纳米颗粒阵列,影响电池光吸收的关键参数是周期P与半径R的比值,或者说是颗粒的表面覆盖度;当P/R=4—5时,总的光吸收较参考电池提高可达20%。与球状颗粒相比,优化后的半球状Al纳米颗粒阵列可获得更好的陷光效果,但后者对颗粒半径R的变化较敏感。另外,结合电场分布,对电池光吸收增强的物理机理进行了分析。%Metal nanoparticles with low cost and high performance have good potential applications in light-trapping of solar cells. In this paper, a three-dimensional model is proposed to simulate the light absorption of microcrystalline silicon (µc-Si:H) thin film solar cells. The effects of spherical and hemispherical Al nanoparticle arrays located on the front surfaces of solar cells are investigated, and the particle radius and array period are optimized by the finite element method. The results show that the optimal Al nanoparticle arrays can enhance broadband absorption in thin film solar cells. For spherical particle arrays, the key parameter that influences light absorption in solar cells is period/radius ratio (P/R) or particle surface coverage. When P/R = 4–5, the optimum integrated absorption enhancement (Eabs) is over 20%under AM1.5 illumination compared with the solar cell without nanoparticles. The value of Eabs is small and decreases with the increase of P/R when P/R>5, and Eabs is less than zero when P/R<3 because of the parasitic absorption and backward scattering from the mental nanoparticles. When P =500 nm and R=120 nm, the spectral absorption rate as a function of wavelength shows broadband absorption including

  13. RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2013-01-01

    Full Text Available Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOx interfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

  14. 晶体硅太阳电池金属电极光学损失的理论分析与实验研究%Theoretical analysis and experimental study of optical loss of metal contacts of crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    李涛; 周春兰; 宋洋; 杨海峰; 郜志华; 段野; 李友忠; 刘振刚; 王文静

    2011-01-01

    本文基于丝网印刷和丝网印刷后光诱导电镀太阳电池,分析了太阳电池前表面金属电极引起的光学损失的各种情况.考虑到空气-玻璃界面和金属电极两侧边缘区域的反射,通过将金属电极截面近似为半椭圆形模拟了电极的光学损失,计算得到的有效宽度比约为金属电极几何宽度的40%.通过对不同类型样品反射谱的测量计算,同时在理论模拟和实验测量上得到了太阳电池前表面金属电极的光学损失,相应的理论与实验结果相符合.%One main factor of restricting industrial crystalline solar cell efficiency is the optical losses caused by the metal front side contacts, including the absorption loss and reflection loss. Based on screen-printed and screen-printed seed layers thickened by light-induced electroplating solar cells, in this paper various cases of optical losses due to the metal contacts are analyzed. Taking into account the reflections in the air-glass interface and the edge regions of metal contacts, the optical losses are simulated by assuming approximately half-oval cross-section of metal contacts. The results show that the effective width ratio is about 40% of the metal contact geometry width. By measuring and calculating the reflection spectra of different types of samples, the optical losses of the metal front side contacts of solar cells are obtained in theoretical simulation and experimental measurement. The corresponding theory and the experimental results are in good agreement with each other.

  15. Numerical investigation of thermal history and residual stress of grown multi-crystalline silicon at the various growth stages for PV applications

    Science.gov (United States)

    Srinivasan, M.; Ramasamy, P.

    2016-05-01

    The directional solidification is a very important technique for growing high quality multi-crystalline silicon at large scale for PV solar cells. Time dependent numerical modelling of the temperature distribution, residual stress in multi-crystalline silicon ingots grown by directional solidification has been investigated for five growth stage. The computation was carried in a 2D axis symmetric model by the finite volume method. The history of temperature distribution, stress generation, are tracked in our modelling continuously to consider the growth process from the beginning to the end of solidification process. This paper is aimed to achieve an advanced understanding of the thermal and mechanical behavior of grown crystal.

  16. Solar cell is not absolutely ecologically sound

    Energy Technology Data Exchange (ETDEWEB)

    Van Calmthout, M.

    1988-11-01

    The University of Utrecht, Netherlands, inventorized the social costs of a large-scale solar cell industry in particular with regard to the environmental impacts. During production and dismantlement of photovoltaic systems hazardous wastes and dangerous situations can be released respectively can occur. The most important results are discussed. Four solar cell technologies are highlighted: the crystalline silicon solar cell, the amorphous silicon solar cell, the CdS/CuInSe/sub 2/ solar cell, and the GaAs solar cell. 1 fig., 1 tab.

  17. The Effect of a Varying Solar Spectrum on the Energy Performance of Solar Cells

    NARCIS (Netherlands)

    Houshyani Hassanzahed, B.; van Sark, W.G.J.H.M.; de Keizer, A.C.; Reich, N.H.

    2007-01-01

    The annual performance of a multi-crystalline silicon cell (mc-Si) and an amorphous silicon cell (a-Si) is calculated using modelled spectra in combination with the well-known solar cell one-diode model. Two different sets of modelled minutely spectra are utilized for modelling cell performance: 1)

  18. A practical field study of various solar cells on their performance in Malaysia

    Energy Technology Data Exchange (ETDEWEB)

    Amin, Nowshad [Dept. of Electrical Electronic and System Engineering, National University of Malaysia, 43600 Bangi Selangor (Malaysia); Lung, Chin Wen; Sopian, Kamaruzzaman [Solar Energy Research Institute, National University of Malaysia, 43600 Bangi Selangor (Malaysia)

    2009-08-15

    A practical field study has been carried out with the intention to analyze and compare the performance of various types of commercially available solar panels under Malaysia's weather. Four different types of solar panels, such as mono-crystalline silicon, multi-crystalline silicon, amorphous silicon and copper-indium-diselenide (CIS) solar panels are used for the practical field study. A number of performance related parameters have been collected using data logger over a period of three consecutive days in the hope that this would give some initial information on the real performance of different solar panels. Results show that mono-crystalline silicon and multi-crystalline silicon solar module perform better when they are under hot sun, whereas the CIS and triple junction amorphous silicon solar panel perform better when it is cloudy and has diffused sunshine. Furthermore, the efficiency of crystalline silicon solar panel has been found to drop when the temperature rises higher. This phenomenon does not appear in the CIS and amorphous silicon solar panels, which shows that the performance of CIS and amorphous silicon solar cells are better in terms of power conversion efficiency and overall performance ratio. Better performance of thin film solar cells like amorphous silicon and CIS are observed from the initial results, which draws attention over the selection of solar panels and also may encourage the usage of these in tropical weather like Malaysia. (author)

  19. Birefringence Measurements on Crystalline Silicon

    CERN Document Server

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  20. Two-dimensional modeling of the back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device

    Science.gov (United States)

    Chowdhury, Zahidur R.; Chutinan, Alongkarn; Gougam, Adel B.; Kherani, Nazir P.; Zukotynski, Stefan

    2010-06-01

    Back Amorphous-Crystalline Silicon Heterojunction (BACH)1 solar cell can be fabricated using low temperature processes while integrating high efficiency features of heterojunction silicon solar cells and back-contact homojunction solar cells. This article presents a two-dimensional modeling study of the BACH cell concept. A parametric study of the BACH cell has been carried out using Sentaurus after benchmarking the software. A detailed model describing the optical generation is defined. Solar cell efficiency of 24.4% is obtained for AM 1.5 global spectrum with VOC of greater than 720 mV and JSC exceeding 40 mA/cm2, considering realistic surface passivation quality and other dominant recombination processes.

  1. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  2. Combined Effect of Mechanical Grooving and Stain-Etched Surface on Optical and Electrical Properties of Crystalline Silicon Substrates

    Science.gov (United States)

    Zarroug, Ahmed; Derbali, Lotfi; Ouertani, Rachid; Dimassi, Wissem; Ezzaouia, Hatem

    2014-05-01

    This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made by means of a micro-groove machining process prior to junction formation. Subsequently, wafers were subjected to an isotropic potassium hydroxide (KOH) etching so that the V-shape would be turned to a U-shape. We found that the successive treatment of silicon surfaces with stain-etching, grooving then alkaline etching enhances the absorption of the textured surface, and decreases the reflectance from 35% to 7% in the 300-1200 nm wavelength range. We obtained a significant increase in the overall light path that generates the building up of the light trapping inside the substrate. We found an improvement in the illuminated I-V characteristics and an increase in the minority carrier lifetime τeff. Such a simple method was adopted to effectively reinforce the overall device performance of crystalline silicon-based solar cells.

  3. Solar cells: state of the art and trends; Solarzellen: Stand der Technik und Trends

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W. [Fraunhofer-Institut fuer Solare Energiesysteme, Freiburg (Germany)

    1997-12-31

    The present article gives an overview of the state of the art of solar cell design. In this connection it deals with the following technologies: solar cells of crystalline silicon (serigraphic solar cells of Cs silicon and mc silicon, high-efficiency silicon solar cells), thin film solar cells (solar cells of amorphous silicon; solar cells of gallium arsenide, solar cells of copper indium (gallium) diselenide, solar cells of cadmium telluride), crystalline silicon film solar cells, and nanocrystalline dye-sensitised solar cells. (HW) [Deutsch] Der vorliegende Beitrag gibt einen Ueberblick ueber den Stand der Technik bei Solarzellen. In diesem Zusammenhang wird auf folgende Technologien eingegangen: Solarzellen aus kristallinem Silizium (Siebdruck-Solarzellen aus Cs-Silicium und mc-Silicium, High-efficiency-Silicium-Solarzellen), Duennschicht-Solarzellen (Solarzellen aus amorphem Silicium, Solarzellen aus Galliumarsenid, Solarzellen aus Kupferindium(Gallium)diselenid, Solarzellen aus Cadmiumtellurid), kristalline Silicium-Film-Solarzellen, Nanokristalline farbstoffsensibilisierte Solarzellen. (HW)

  4. A holistic view of crystalline silicon module reliability

    Energy Technology Data Exchange (ETDEWEB)

    Hanoka, J.I. [Evergreen Solar, Inc., Waltham, MA (United States)

    1995-11-01

    Several aspects of module reliability are discussed, particularly with reference to the encapsulant and its interaction with the metallization and interconnection of a module. A need to look at the module as a whole single unit is stressed. Also, the issue of a slight light degradation effect in crystalline silicon cells is discussed. A model for this is mentioned and it may well be that polycrystalline cells with dislocations may have an advantage.

  5. Performance analysis of field exposed single crystalline silicon modules

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, O.S.; Saurabh, Sriparn; Shil, S.K.; Pant, P.C.; Kumar, Rajesh; Kumar, Arun; Bandopadhyay, Bibek [Solar Energy Centre, Ministry of New and Renewable Energy, Block-14, CGO Complex, Lodhi Road, New Delhi - 110003 (India)

    2010-09-15

    This paper presents results on the field performance degradation of mono-crystalline silicon PV modules from 11 PV module manufacturers under identical field conditions. The modules were installed in both fixed tilt and manual tracking modes. The data were monitored using a CR23X Data logger and I-V curves were taken using SPI 240A Sun simulator. The performance parameters analyzed are V{sub oc}, I{sub sc}, P{sub max}, I{sub mp}, V{sub mp} and the fill factor, as a function of time of field exposure. Qualitative studies are made on physically visible defects such as EVA coloration, cell de-laminations, corrosion of solar cell grid, corrosion of end strip connected in the terminal box, failure of by-pass diode, detachment of the terminal box, tearing of tedlar sheet, etc. The effect of field exposure on the performance parameters indicates that the qualification standard (s) needs to be reviewed and revised if the modules are to perform for {proportional_to}20 years under actual field conditions in India. (author)

  6. Nickel Electroless Plating: Adhesion Analysis for Mono-Type Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Shin, Eun Gu; Rehman, Atteq ur; Lee, Sang Hee; Lee, Soo Hong

    2015-10-01

    The adhesion of the front electrodes to silicon substrate is the most important parameters to be optimized. Nickel silicide which is formed by sintering process using a silicon substrate improves the mechanical and electrical properties as well as act as diffusion barrier for copper. In this experiment p-type mono-crystalline czochralski (CZ) silicon wafers having resistivity of 1.5 Ω·cm were used to study one step and two step nickel electroless plating process. POCl3 diffusion process was performed to form the emitter with the sheet resistance of 70 ohm/sq. The Six, layer was set down as an antireflection coating (ARC) layer at emitter surface by plasma enhanced chemical vapor deposition (PECVD) process. Laser ablation process was used to open SiNx passivation layer locally for the formation of the front electrodes. Nickel was deposited by electroless plating process by one step and two step nickel electroless deposition process. The two step nickel plating was performed by applying a second nickel deposition step subsequent to the first sintering process. Furthermore, the adhesion analysis for both one step and two steps process was conducted using peel force tester (universal testing machine, H5KT) after depositing Cu contact by light induced plating (LIP).

  7. Summary of the Third Workshop on Metallization for Crystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Beaucarne, G. [Dow Corning, Parc Industriel, Zone C, Rue Jules Bordet, 7180 Seneffe (Belgium); Schubert, G. [Sunways AG, Macairestrasse 3 - 5, D - 78467 Konstanz (Germany); Hoornstra, J. [Energy research Centre of the Netherlands ECN, POBox 1, 1755 ZG Petten (Netherlands); Horzeld, J. [imec vzw., Kapeldreef 75, 3001 Leuven (Belgium); Glunze, S.W. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

    2012-11-01

    This paper reports on the different contributions and discussions that took place in the workshop. Great progress has recently been achieved in paste development, which yet again has stretched the lifetime of screen-printed metallization technology. Nevertheless, a transition towards Cu plating-based metallization is anticipated, and solutions to the different challenges were presented and discussed.

  8. A New Method to Measure Trap Characteristics of Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    MA Xun; LIU Zu-Ming; QU Sheng; WANG Shu-Rong; HAO Rui-Ting; LIAO Hua

    2011-01-01

    @@ A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.%A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.

  9. Multi-crystalline silicon solidification under controlled forced convection

    Science.gov (United States)

    Cablea, M.; Zaidat, K.; Gagnoud, A.; Nouri, A.; Chichignoud, G.; Delannoy, Y.

    2015-05-01

    Multi-crystalline silicon wafers have a lower production cost compared to mono-crystalline wafers. This comes at the price of reduced quality in terms of electrical properties and as a result the solar cells made from such materials have a reduced efficiency. The presence of different impurities in the bulk material plays an important role during the solidification process. The impurities are related to different defects (dislocations, grain boundaries) encountered in multi-crystalline wafers. Applying an alternative magnetic field during the solidification process has various benefits. Impurities concentration in the final ingot could be reduced, especially metallic species, due to a convective term added in the liquid that reduces the concentration of impurities in the solute boundary layer. Another aspect is the solidification interface shape that is influenced by the electromagnetic stirring. A vertical Bridgman type furnace was used in order to study the solidification process of Si under the influence of a travelling magnetic field able to induce a convective flow in the liquid. The furnace was equipped with a Bitter type three-phase electromagnet that provides the required magnetic field. A numerical model of the furnace was developed in ANSYS Fluent commercial software. This paper presents experimental and numerical results of this approach, where interface markings were performed.

  10. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  11. Ultrathin silicon solar cells with enhanced photocurrents assisted by plasmonic nanostructures

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Stassen, Erik; Mortensen, N. Asger

    2012-01-01

    nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range, while keeping insensitive to the incident angle. These results are paving...

  12. TOPICAL REVIEW: New crystalline silicon ribbon materials for photovoltaics

    Science.gov (United States)

    Hahn, G.; Schönecker, A.

    2004-12-01

    The objective of this article is to review, in relation to photovoltaic applications, the current status of crystalline silicon ribbon technologies as an alternative to technologies based on wafers originating from ingots. Increased wafer demand, the foreseeable silicon feedstock shortage, and the need for a substantial module cost reduction are the main issues that must be faced in the booming photovoltaic market. Ribbon technologies make excellent use of silicon, as wafers are crystallized directly from the melt at the desired thickness and no kerf losses occur. Therefore, they offer a high potential for significantly reducing photovoltaic electricity costs as compared to technology based on wafers cut from ingots. However, the defect structure present in the ribbon silicon wafers can limit material quality and cell efficiency. We will review the most successful of the ribbon techniques already used in large scale production or currently in the pilot demonstration phase, with special emphasis on the defects incorporated during crystal growth. Because of the inhomogeneous distribution of defects, mapped characterization techniques have to be applied. Al and P gettering studies give an insight into the complex interaction of defects in the multicrystalline materials as the gettering efficiency is influenced by the state of the chemical bonding of the metal atoms. The most important technique for improvement of carrier lifetimes is hydrogenation, whose kinetics are strongly influenced by oxygen and carbon concentrations present in the material. The best cell efficiencies for laboratory-type (17%-18% cell area: 4 cm2) as well as industrial-type (15%-16% cell area: {\\ge } 80~{\\mathrm {cm^{2}}} ) ribbon silicon solar cells are in the same range as for standard wafers cut from ingots. A substantial cost reduction therefore seems achievable, although the most promising techniques need to be improved.

  13. Donor-hydrogen complexes in crystalline silicon

    NARCIS (Netherlands)

    Liang, Z.N.; Niesen, L; Haas, C; Denteneer, P.J.H.

    1996-01-01

    Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing Sb-119 --> Sn-119 source Mossbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mossbauer intensity associated with

  14. Donor-hydrogen complexes in crystalline silicon

    NARCIS (Netherlands)

    Liang, Z.N.; Niesen, L; Haas, C; Denteneer, P.J.H.

    1996-01-01

    Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing Sb-119 --> Sn-119 source Mossbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mossbauer intensity associated with th

  15. Microscopic optoelectronic defectoscopy of solar cells

    Directory of Open Access Journals (Sweden)

    Dallaeva D.

    2013-05-01

    Full Text Available Scanning probe microscopes are powerful tool for micro- or nanoscale diagnostics of defects in crystalline silicon solar cells. Solar cell is a large p-n junction semiconductor device. Its quality is strongly damaged by the presence of defects. If the cell works under low reverse-biased voltage, defects emit a light in visible range. The suggested method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current and thus provides more complex information. To prove its feasibility, we have selected one defect (truncated pyramid in the sample, which emitted light under low reverse-biased voltage.

  16. Improved Josephson Qubits incorporating Crystalline Silicon Dielectrics

    Science.gov (United States)

    Gao, Yuanfeng; Maurer, Leon; Hover, David; Patel, Umeshkumar; McDermott, Robert

    2010-03-01

    Josephson junction phase quibts are a leading candidate for scalable quantum computing in the solid state. Their energy relaxation times are currently limited by microwave loss induced by a high density of two-level state (TLS) defects in the amorphous dielectric films of the circuit. It is expected that the integration of crystalline, defect-free dielectrics into the circuits will yield substantial improvements in qubit energy relaxation times. However, the epitaxial growth of a crystalline dielectric on a metal underlayer is a daunting challenge. Here we describe a novel approach in which the crystalline silicon nanomembrane of a Silicon-on-Insulator (SOI) wafer is used to form the junction shunt capacitor. The SOI wafer is thermocompression bonded to the device wafer. The handle and buried oxide layers of the SOI are then etched away, leaving the crystalline silicon layer for subsequent processing. We discuss device fabrication issues and present microwave transport data on lumped-element superconducting resonators incorporating the crystalline silicon.

  17. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  18. Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.

    Science.gov (United States)

    Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H

    2015-07-16

    Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV).

  19. Influence of ITO deposition and post annealing on HIT solar cell structures

    NARCIS (Netherlands)

    Zhang, D.; Tavakoliyaraki, A.; Wu, Y.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2011-01-01

    Heterojunction silicon with intrinsic thin layer (HIT) solar cells that combine advanced thin-film hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) technologies are promising because of the high performance at low cost. Due to the low conductivity of a-Si:H, indium tin oxide (I

  20. Influence of ITO deposition and post annealing on HIT solar cell structures

    NARCIS (Netherlands)

    Zhang, D.; Tavakoliyaraki, A.; Wu, Y.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2011-01-01

    Heterojunction silicon with intrinsic thin layer (HIT) solar cells that combine advanced thin-film hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) technologies are promising because of the high performance at low cost. Due to the low conductivity of a-Si:H, indium tin oxide (I

  1. Superacid Passivation of Crystalline Silicon Surfaces.

    Science.gov (United States)

    Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

    2016-09-14

    The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

  2. An Investigation of High Performance Heterojunction Silicon Solar Cell Based on n-type Si Substrate

    Directory of Open Access Journals (Sweden)

    N. Memarian

    2016-12-01

    Full Text Available In this study, high efficient heterojunction crystalline silicon solar cells without using an intrinsic layer were systematically investigated. The effect of various parameters such as work function of transparent conductive oxide (ϕTCO, density of interface defects, emitter and crystalline silicon thickness on heterojunction silicon solar cell performance was studied. In addition, the effect of band bending and internal electric field on solar cell performance together with the dependency of cell performance on work function and reflectance of the back contact were investigated in full details. The optimum values of the solar cell properties for the highest efficiency are presented based on the results of the current study. The results represent a complete set of optimum values for a heterojunction solar cell with high efficiency up to the 24.1 % with VOC  0.87 V and JSC  32.69 mAcm – 2.

  3. Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells

    Science.gov (United States)

    Li, Tao; Wang, Wen-Jing

    2015-02-01

    The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15Ω/□. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters.

  4. Crystalline Silicon Dielectrics for Superconducting Qubit Circuits

    Science.gov (United States)

    Hover, David; Peng, Weina; Sendelbach, Steven; Eriksson, Mark; McDermott, Robert

    2009-03-01

    Superconducting qubit energy relaxation times are limited by microwave loss induced by a continuum of two-level state (TLS) defects in the dielectric materials of the circuit. State-of-the-art phase qubit circuits employ a micron-scale Josephson junction shunted by an external capacitor. In this case, the qubit T1 time is directly proportional to the quality factor (Q) of the capacitor dielectric. The amorphous capacitor dielectrics that have been used to date display intrinsic Q of order 10^3 to 10^4. Shunt capacitors with a Q of 10^6 are required to extend qubit T1 times well into the microsecond range. Crystalline dielectric materials are an attractive candidate for qubit capacitor dielectrics, due to the extremely low density of TLS defects. However, the robust integration of crystalline dielectrics with superconducting qubit circuits remains a challenge. Here we describe a novel approach to the realization of high-Q crystalline capacitor dielectrics for superconducting qubit circuits. The capacitor dielectric is a crystalline silicon nanomembrane. We discuss characterization of crystalline silicon capacitors with low-power microwave transport measurements at millikelvin temperatures. In addition, we report progress on integrating the crystalline capacitor process with Josephson qubit fabrication.

  5. Crystalline-silicon photovoltaics: Necessary and sufficient

    Science.gov (United States)

    Basore, P. A.; Gee, J. M.

    Photovoltaic (PV) energy systems have always been dominated by crystalline-silicon (c-Si) technology, and recent developments persuasively suggest that c-Si will continue to be the dominant technology well into the next century. The authors explain why c-Si technology is fairing much better than previously expected, and discuss the impact of improvements currently under development. They use a ground-up, engineering-based approach to predict the expected evolution of this type of PV system, and argue that c-Si PV will be in a position to compete for the US residential power market starting in about the year 2010. This market alone will provide the opportunity for PV to supply several percent of the electrical energy used in the United States. Crystalline-silicon technology is therefore not just necessary for building a near-term PV industry; it also offers a low-risk approach to meeting long-term goals for PV energy systems.

  6. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  7. Flexible solar cells based on curved surface nano-pyramids

    Science.gov (United States)

    Shrestha, Anil; Mizuno, Genki; Oduor, Patrick; Dutta, Achyut K.; Dhar, Nibir K.; Lewis, Jay

    2016-05-01

    The advent of ultrathin crystalline silicon (c-Si) solar cells has significantly reduced the cost of silicon solar cells by consuming less material. However, the very small thickness of ultrathin solar cells poses a challenge to the absorption of sufficient light to provide efficiency that is competitive to commercial solar cells. Light trapping mechanisms utilizing nanostructure technologies have been utilized to alleviate this problem. Unfortunately, a significant portion of light is still being lost even before entering the solar cells because of reflection. Different kinds of nanostructures have been employed to reduce reflection from solar cells, but reflection losses still prevail. In an effort to reduce reflection loss, we have used an array of modified nanostructures based cones or pyramids with curved sides, which matches the refractive index of air to that of silicon. Moreover, use of these modified nano-pyramids provides a quintic (fifth power) gradient index layer between air and silicon, which significantly reduces reflection. The solar cells made of such nanostructures not only significantly increase conversion efficiency at reduced usage of crystalline silicon material (e.g. thinner), but it also helps to make the c-Si based solar cell flexible. Design and optimization of flexible c-Si solar cell is presented in the paper.

  8. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    Science.gov (United States)

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  9. Mechanical Properties of Crystalline Silicon Carbide Nanowires.

    Science.gov (United States)

    Zhang, Huan; Ding, Weiqiang; Aidun, Daryush K

    2015-02-01

    In this paper, the mechanical properties of crystalline silicon carbide nanowires, synthesized with a catalyst-free chemical vapor deposition method, were characterized with nanoscale tensile testing and mechanical resonance testing methods inside a scanning electron microscope. Tensile testing of individual silicon carbide nanowire was performed to determine the tensile properties of the material including the tensile strength, failure strain and Young's modulus. The silicon carbide nanowires were also excited to mechanical resonance in the scanning electron microscope vacuum chamber using mechanical excitation and electrical excitation methods, and the corresponding resonance frequencies were used to determine the Young's modulus of the material according to the simple beam theory. The Young's modulus values from tensile tests were in good agreement with the ones obtained from the mechanical resonance tests.

  10. (Preoxidation cleaning optimization for crystalline silicon)

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    A series of controlled experiments has been performed in Sandia's Photovoltaic Device Fabrication Laboratory to evaluate the effect of various chemical surface treatments on the recombination lifetime of crystalline silicon wafers subjected to a high-temperature dry oxidation. From this series of experiments we have deduced a relatively simple yet effective cleaning sequence. We have also evaluated the effect of different chemical damage-removal etches for improving the recombination lifetime and surface smoothness of mechanically lapped wafers. This paper presents the methodology used, the experimental results obtained, and our experience with using this process on a continuing basis over a period of many months. 7 refs., 4 figs., 1 tab.

  11. Review. Industrial silicon wafer solar cells. Status and trends

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, Armin G.; Boreland, Matthew B.; Hoex, Bram; Mueller, Thomas [National Univ. of Singapore (Singapore). Solar Energy Research Institute of Singapore (SERIS)

    2012-11-01

    Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower dollar/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology. (orig.)

  12. Crystalline-silicon reliability lessons for thin-film modules

    Science.gov (United States)

    Ross, R. G., Jr.

    1985-01-01

    The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

  13. Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

    OpenAIRE

    Paviet-Salomon, Bertrand; Tomasi, Andrea; Descoeudres, Antoine; Barraud, Loris; Nicolay, Sylvain; Despeisse, Matthieu; De Wolf, Stefaan; Ballif, Christophe

    2015-01-01

    We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at t...

  14. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  15. The emergence of high-performance multi-crystalline silicon in photovoltaics

    Science.gov (United States)

    Lan, C. W.; Lan, A.; Yang, C. F.; Hsu, H. P.; Yang, M.; Yu, A.; Hsu, B.; Hsu, W. C.; Yang, A.

    2017-06-01

    The emergence of the high-performance multi-crystalline silicon (HP mc-Si) in 2011 has made a significant impact to photovoltaic industry. In addition to the much better ingot uniformity and production yield, HP mc-Si also has better material quality for solar cells. As a result, the average efficiency of solar cells made from HP mc-Si in production increased from 16.6% in 2011 to 18.5% or beyond in 2016. More importantly, the efficiency distribution became much narrower; the difference from various producers became smaller as well. Unlike the conventional way of having large grains and electrically-inactive twin boundaries, the crystal growth of HP mc-Si by directional solidification is initiated from uniform small grains having a high fraction of random grain boundaries. The grains developed from such grain structures significantly relax thermal stress and suppress the massive generation and propagation of dislocation clusters. The gettering efficacy of HP mc-Si is also superior to the conventional one. Nowadays, most of commercial mc-Si is grown by this approach, which could be implemented by either seeded with silicon particles or controlled nucleation, e.g., using nucleation agent coating. The future improvement of this technology will also be discussed in this review.

  16. SEMICONDUCTOR TECHNOLOGY Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

    Science.gov (United States)

    Weiying, Ou; Yao, Zhang; Hailing, Li; Lei, Zhao; Chunlan, Zhou; Hongwei, Diao; Min, Liu; Weiming, Lu; Jun, Zhang; Wenjing, Wang

    2010-10-01

    Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant. Experiments were carried out in different TMAH concentrations at different temperatures for different etching times. The surface phenomena, etching rates, surface morphology and surface reflectance were analyzed. Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the etching process. The etching mechanism is explained based on the experimental results and the theoretical considerations. It is suggested that all the components in the TMAH solutions play important roles in the etching process. Moreover, TMA+ ions may increase the wettability of the textured surface. A good textured surface can be obtained in conditions where the absorption of OH-/H2O is in equilibrium with that of TMA+/SiO2 (OH)22-.

  17. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    OpenAIRE

    Sérgio Boscato Garcia; Adriano Moehlecke; Izete Zanesco

    2012-01-01

    Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated an...

  18. Quantification of Solar Cell Failure Signatures Based on Statistical Analysis of Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We demonstrate a method to quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From the EL...... operation. The method can be easily automated for quality control by module manufacturers or installers, or as a diagnostic tool by plant operators and diagnostic service providers....

  19. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  20. Solar-hydrogen generation and solar concentration (Conference Presentation)

    NARCIS (Netherlands)

    Chinello, Enrico; Modestino, Miquel A.; Schüttauf, Jan-Willem; Lambelet, David; Delfino, Antonio; Domine, Didier; Faes, Antonin; Despeisse, Matthieu; Bailat, Julien; Psaltis, Demetri; Fernandez Rivas, David; Ballif, Christophe; Moser, Christophe; Sulima, Oleg V.; Conibeer, Gavin

    2016-01-01

    We successfully demonstrated and reported the highest solar-to-hydrogen efficiency with crystalline silicon cells and Earth-abundant electrocatalysts under unconcentrated solar radiation. The combination of hetero-junction silicon cells and a 3D printed Platinum/Iridium-Oxide electrolyzer has been p

  1. Test-to-Failure of Crystalline Silicon Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  2. Inkjet technology for crystalline silicon photovoltaics.

    Science.gov (United States)

    Stüwe, David; Mager, Dario; Biro, Daniel; Korvink, Jan G

    2015-01-27

    The world's ever increasing demand for energy necessitates technologies that generate electricity from inexhaustible and easily accessible energy sources. Silicon photovoltaics is a technology that can harvest the energy of sunlight. Its great characteristics have fueled research and development activities in this exciting field for many years now. One of the most important activities in the solar cell community is the investigation of alternative fabrication and structuring technologies, ideally serving both of the two main goals: device optimization and reduction of fabrication costs. Inkjet technology is practically evaluated along the whole process chain. Research activities cover many processes, such as surface texturing, emitter formation, or metallization. Furthermore, the inkjet technology itself is manifold as well. It can be used to apply inks that serve as a functional structure, present in the final device, as mask for subsequent structuring steps, or even serve as a reactant source to activate chemical etch reactions. This article reviews investigations of inkjet-printing in the field of silicon photovoltaics. The focus is on the different inkjet processes for individual fabrication steps of a solar cell. A technological overview and suggestions about where future work will be focused on are also provided. The great variety of the investigated processes highlights the ability of the inkjet technology to find its way into many other areas of functional printing and printed electronics.

  3. Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon

    Science.gov (United States)

    Roigé, A.; Alvarez, J.; Jaffré, A.; Desrues, T.; Muñoz, D.; Martín, I.; Alcubilla, R.; Kleider, J.-P.

    2017-02-01

    Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive study about the effects and implications of photon reabsorption phenomena on confocal micro-PL measurements in crystalline silicon (c-Si), the workhorse material of the PV industry. First, supported by theoretical calculations, we show that the level of reabsorption is intrinsically linked to the selected experimental parameters, i.e., focusing lens, pinhole aperture, and excitation wavelength, as they define the spatial extension of the confocal detection volume, and therefore, the effective photon traveling distance before collection. Second, we also show that certain sample properties such as the reflectance and/or the surface recombination velocity can also have a relevant impact on reabsorption. Due to the direct relationship between the reabsorption level and the spectral line shape of the resulting PL emission signal, reabsorption phenomena play a paramount role in certain types of micro-PL measurements. This is demonstrated by means of two practical and current examples studied using confocal PL, namely, the estimation of doping densities in c-Si and the study of back-surface and/or back-contacted Si devices such as interdigitated back contact solar cells, where reabsorption processes should be taken into account for the proper interpretation and quantification of the obtained PL data.

  4. A Low-Power and Low-Voltage Power Management Strategy for On-Chip Micro Solar Cells

    Directory of Open Access Journals (Sweden)

    Ismail Cevik

    2015-01-01

    Full Text Available Fundamental characteristics of on-chip micro solar cell (MSC structures were investigated in this study. Several MSC structures using different layers in three different CMOS processes were designed and fabricated. Effects of PN junction structure and process technology on solar cell performance were measured. Parameters for low-power and low-voltage implementation of power management strategy and boost converter based circuits utilizing fractional voltage maximum power point tracking (FVMPPT algorithm were determined. The FVMPPT algorithm works based on the fraction between the maximum power point operation voltage and the open circuit voltage of the solar cell structure. This ratio is typically between 0.72 and 0.78 for commercially available poly crystalline silicon solar cells that produce several watts of power under typical daylight illumination. Measurements showed that the fractional voltage ratio is much higher and fairly constant between 0.82 and 0.85 for on-chip mono crystalline silicon micro solar cell structures that produce micro watts of power. Mono crystalline silicon solar cell structures were observed to result in better power fill factor (PFF that is higher than 74% indicating a higher energy harvesting efficiency.

  5. Enhancing solar cell efficiency by using spectral converters

    Energy Technology Data Exchange (ETDEWEB)

    Van Sark, W.G.J.H.M. [Department of Science, Technology and Society, Copernicus Institute, Utrecht University, Utrecht (Netherlands); Meijerink, A. [Department of Chemistry of Condensed Matter, Debye Institute, Utrecht University, Utrecht (Netherlands); Schropp, R.E.I. [Department of Surfaces, Interfaces and Devices, Debye Institute, Utrecht University, Utrecht (Netherlands); Van Roosmalen, J.A.M. [ECN Solar Energy, Petten (Netherlands); Lysen, E.H. [Utrecht Centre for Energy research UCE, Utrecht University, Utrecht (Netherlands)

    2005-04-01

    Planar converters containing quantum dots as wavelength-shifting moieties on top of a multi-crystalline silicon and an amorphous silicon solar cell were studied. The highly efficient quantum dots are to shift the wavelengths where the spectral response of the solar cell is low to wavelengths where the spectral response is high, in order to improve the conversion efficiency of the solar cell. It was calculated that quantum dots with an emission at 603 nm increase the multi-crystalline solar cell short-circuit current by nearly 10%. Simulation results for planar converters on hydrogenated amorphous silicon solar cells show no beneficial effects, due to the high spectral response at low wavelength.

  6. Enhancing solar cell efficiency by using spectral converters

    Energy Technology Data Exchange (ETDEWEB)

    Sark, W.G.J.H.M. van [Utrecht University (Netherlands). Copernicus Institute; Meijerink, A.; Schropp, R.E.I. [Utrecht University (Netherlands). Debye Institute; Roosmalen, J.A.M. van [ECN Solar Energy, Petten (Netherlands); Lysen, E.H. [Utrecht University (Netherlands). Centre for Energy Research

    2005-05-01

    Planar converters containing quantum dots as wavelength-shifting moieties on top of a multi-crystalline silicon and an amorphous silicon solar cell were studied. The highly efficient quantum dots are to shift the wavelengths where the spectral response of the solar cell is low to wavelengths where the spectral response is high, in order to improve the conversion efficiency of the solar cell. It was calculated that quantum dots with an emission at 603 nm increase the multi-crystalline solar cell short-circuit current by nearly 10%. Simulation results for planar converters on hydrogenated amorphous silicon solar cells show no beneficial effects, due to the high spectral response at low wavelength. (author)

  7. Recent Advances in Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Thomas Kietzke

    2007-01-01

    Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

  8. Technology development of the nano-crystalline silicon thin film materials%纳米晶硅薄膜材料的技术发展

    Institute of Scientific and Technical Information of China (English)

    吴大维; 吴越侠; 唐志斌

    2012-01-01

    The recent development of the nano - crystalline silicon thin film material is reviewed in this paper. Some ideas is proposed to promote advances of the silicon thin film solar cells. In this paper, we make come discussions on the development of silicon thin film solar cells and predict the prospect of latest ones.%本文综述了硅基薄膜材料的发展历程;提出了一些促进硅基薄膜电池技术进步的思路;并对硅 基薄膜电池的发展进行了有益的探讨,对最新的硅基薄膜太阳能电池作了展望.

  9. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Menna, P.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Laboratory, Golden, CO (United States)

    1996-06-10

    We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. We found that all of these HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. We also used the HFSF to crystallize a-Si:H thin films on glass, to texture crystalline silicon surfaces, to deposit gold contacts on silicon wafers, and to getter impurities from metallurgical grade silicon. HFSF processing offers several advantages over conventional furnace processing: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. We conclude that HFSF processing of silicon solar cells has the potential to improve cell efficiency, reduce cell fabrication costs, and also be an environmentally friendly manufacturing method. We have also demonstrated that the HFSF can be used to achieve solid-phase crystallization of a-Si:H at very high speed

  10. CH(3)NH(3)PbI(3) perovskite / silicon tandem solar cells: characterization based optical simulations.

    Science.gov (United States)

    Filipič, Miha; Löper, Philipp; Niesen, Bjoern; De Wolf, Stefaan; Krč, Janez; Ballif, Christophe; Topič, Marko

    2015-04-06

    In this study we analyze and discuss the optical properties of various tandem architectures: mechanically stacked (four-terminal) and monolithically integrated (two-terminal) tandem devices, consisting of a methyl ammonium lead triiodide (CH(3)NH(3)PbI(3)) perovskite top solar cell and a crystalline silicon bottom solar cell. We provide layer thickness optimization guidelines and give estimates of the maximum tandem efficiencies based on state-of-the-art sub cells. We use experimental complex refractive index spectra for all involved materials as input data for an in-house developed optical simulator CROWM. Our characterization based simulations forecast that with optimized layer thicknesses the four-terminal configuration enables efficiencies over 30%, well above the current single-junction crystalline silicon cell record of 25.6%. Efficiencies over 30% can also be achieved with a two-terminal monolithic integration of the sub-cells, combined with proper selection of layer thicknesses.

  11. Reduction of the environmental impacts in crystalline silicon module manufacturing

    NARCIS (Netherlands)

    Alsema, E.A.; de Wild-Schoten, M.J.

    2007-01-01

    In this paper we review the most important options to reduce environmental impacts of crystalline silicon modules. We investigate which are the main barriers for implementation of the measure. Finally we review which measures to reduce environmental impacts could also lead to a cost reduction. Reduc

  12. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  13. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Keya Zhou

    2015-07-01

    Full Text Available Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si and amorphous silicon (a-Si thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

  14. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications.

    Science.gov (United States)

    Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

    2015-07-22

    Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

  15. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

    2014-05-19

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  16. Sheet resistance uniformity in drive-in step for different multi-crystalline silicon wafer dispositions

    Energy Technology Data Exchange (ETDEWEB)

    Moussi, A.; Bouhafs, D.; Mahiou, L. [Laboratoire des Cellules Photovoltaiques, Unite de Developpement de la Technologie du Silicium, 2 Bd, Frantz Fanon, B.P. 140, 7 Merveilles Alger (Algeria); Belkaid, M.S. [Dep. Electronique, Faculte de Genie Electrique et Informatique, UMMTO (Algeria)

    2009-09-15

    In this work, we present a study of emitters realized using different configurations of the silicon wafers in the quartz boat. The phosphorous liquid source is sprayed onto p-type multi-crystalline silicon substrates and the drive-in is made at high temperature in a muffle furnace. Three different configurations of the wafers in the boat are tested: separated, back to back and compact block of wafers. A fourth configuration is also used in source-receptor mode. The emitter phosphorous concentration profile is obtained by SIMS analysis. The resulting emitters are characterized by sheet resistance measurements and a comparison is made between the wafers within the same batch and from one batch to another. The uniformity and the standard deviation of the sheet resistance are calculated in each case. The emitter sheet resistance mapping of the wafer set in the middle of the boat for a given process gives a mean R{sub sq} 14.66 {omega}/sq with a standard deviation of 1.76% and uniformity of 18.7%. Standard deviations of 2.116% and 1.559% are obtained for wafers in the batch when using the spaced and compact configurations, respectively. The standard deviation is reduced to 0.68% when the wafers are used in source/receptor mode. A comparison is also made between wafers with different dilution of phosphorous source in ethanol. From these results we can conclude that the compact configuration offers better uniformity and lower standard deviation. Furthermore, when combined with the source-receptor configuration these parameters are significantly improved. This study allows the experimenter to identify the technological parameters of the solar cell emitter manufacturing and target precisely the desired values of the sheet resistance while limiting the number of rejected wafers. (author)

  17. Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Enyu Wang

    2016-01-01

    Full Text Available At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

  18. Thin-film monocrystalline-silicon solar cells based on a seed layer approach with 11% efficiency

    Science.gov (United States)

    Gordon, I.; Qiu, Y.; Van Gestel, D.; Poortmans, J.

    2010-09-01

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. Almost half of the price of wafer-based silicon solar modules is currently due to the cost of the silicon wafers themselves. Using crystalline-silicon thin-film as the active material would substantially reduce the silicon consumption while still ensuring a high cell-efficiency potential and a stable cell performance. One way to create a crystalline-silicon thin film on glass is by using a seed layer approach in which a thin crystalline-silicon layer is first created on a non-silicon substrate, followed by epitaxial thickening of this layer. In this paper, we present new solar cell results obtained on 10-micron thick monocrystalline-silicon layers, made by epitaxial thickening of thin seed layers on transparent glass-ceramic substrates. We used thin (001)-oriented silicon single-crystal seed layers on glass-ceramic substrates provided by Corning Inc. that are made by a process based on anodic bonding and implant-induced separation. Epitaxial thickening of these seed layers was realized in an atmospheric-pressure chemical vapor deposition system. Simple solar cell structures in substrate configuration were made from the epitaxial mono-silicon layers. The Si surface was plasma-textured to reduce the front-side reflection. No other light trapping features were incorporated. Efficiencies of up to 11% were reached with Voc values above 600 mV indicating the good electronic quality of the material. We believe that by further optimizing the material quality and by integrating an efficient light trapping scheme, the efficiency potential of these single-crystal silicon thin films on glass-ceramics should be higher than 15%.

  19. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    Directory of Open Access Journals (Sweden)

    Sérgio Boscato Garcia

    2012-06-01

    Full Text Available Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated and it is constituted by a heating system with three zones and systems to introduce the wafers inside the furnace as well as to control of gas flows. This equipment is the first one developed in Brazil to promote impurity diffusions in order to produce silicon solar cells and it was manufactured jointly with a Brazilian company.

  20. Simulation of hetero-junction silicon solar cells with AMPS-1D

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, Norberto; Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)

    2010-01-15

    Mono- and poly-crystalline silicon solar cell modules currently represent between 80% and 90% of the PV world market. The reasons are the stability, robustness and reliability of this kind of solar cells as compared to those of emerging technologies. Then, in the mid-term, silicon solar cells will continue playing an important role for their massive terrestrial application. One important approach is the development of silicon solar cells processed at low temperatures (less than 300 C) by depositing amorphous silicon layers with the purpose of passivating the silicon surface, and avoiding the degradation suffered by silicon when processed at temperatures above 800 C. This kind of solar cells is known as HIT cells (hetero-junction with an intrinsic thin amorphous layer) and are already produced commercially (Sanyo Ltd.), reaching efficiencies above 20%. In this work, HIT solar cells are simulated by means of AMPS-1D, which is a program developed at Pennsylvania State University. We shall discuss the modifications required by AMPS-1D for simulating this kind of structures since this program explicitly does not take into account interfaces with high interfacial density of states as occurs at amorphous-crystalline silicon hetero-junctions. (author)

  1. Design of a plasmonic back reflector for silicon nanowire decorated solar cells.

    Science.gov (United States)

    Ren, Rui; Guo, Yongxin; Zhu, Rihong

    2012-10-15

    This Letter presents a crystalline silicon thin film solar cell model with Si nanowire arrays surface decoration and metallic nanostructure patterns on the back reflector. The nanostructured Ag back reflector can significantly enhance the absorption in the near-infrared spectrum. Furthermore, by inserting a ZnO:Al layer between the silicon substrate and nanostructured Ag back reflector, the absorption loss in the Ag back reflector can be clearly depressed, contributing to a maximum J(sc) of 28.4 mA/cm(2). A photocurrent enhancement of 22% is achieved compared with a SiNW solar cell with a planar Ag back reflector.

  2. Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Mortensen, N. Asger

    2012-01-01

    cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell......Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar......, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells....

  3. Stability of deuterated amorphous silicon solar cells

    CERN Document Server

    Munyeme, G; Van der Meer, L F G; Dijkhuis, J I; Van der Weg, W F; Schropp, R

    2004-01-01

    In order to elucidate the microscopic mechanism for the earlier observed enhanced stability of deuterated amorphous silicon solar cells we conducted a side by-side study of fully deuterated intrinsic layers on crystalline silicon substrates using the free-electron laser facility at Nieuwegein (FELIX) to resonantly excite the Si-D stretching vibration and measure the various relaxation channels available to these modes, and of p-i-n solar cells with identical intrinsic absorber layers on glass/TCO substrates to record the degradation and stabilization of solar cell parameters under prolonged light soaking treatments. From our comparative study it is shown that a-Si:D has a superior resistance against light-induced defect creation as compared to a-Si:H and that this can now be explained in the light of the 'H collision model' since the initial step in the process, the release of H, is more likely than that of D. Thus, a natural explanation for the stability as observed in a-Si:D solar cells is provided.

  4. Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, I.; Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vallon, S. [Corning European Technology Center, 7bis avenue de Valvins, 77210 Avon (France); Mayolet, A. [Corning Incorporated, SP-FR02-12, Corning, NY 14831 (United States)

    2010-02-15

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. One way to create crystalline-silicon thin films on non-silicon substrates is to use the so-called ''seed layer approach'', in which a thin crystalline-silicon seed layer is first created, followed by epitaxial thickening of this seed layer. In this paper, we present the first solar cell results obtained on 10-{mu}m-thick monocrystalline-silicon (mono-Si) layers obtained by a seed layer approach on transparent glass-ceramic substrates. The seed layers were made using implant-induced separation and anodic bonding. These layers were then epitaxially thickened by thermal CVD. Simple solar cell structures without integrated light trapping features showed efficiencies of up to 7.5%. Compared to polycrystalline-silicon layers made by aluminum-induced crystallization of amorphous silicon and thermal CVD, the mono-Si layers have a much higher bulk diffusion lifetime. (author)

  5. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso; Glick, Stephen; Kerekes, Tamas; Teodorescu, Remus

    2015-06-14

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module's electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation. Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.

  6. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  7. The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3

    Science.gov (United States)

    Liao, Baochen; Stangl, Rolf; Mueller, Thomas; Lin, Fen; Bhatia, Charanjit S.; Hoex, Bram

    2013-01-01

    The effect of light soaking of crystalline silicon wafer lifetime samples surface passivated by thermal atomic layer deposited (ALD) Al2O3 is investigated in this paper. Contrary to other passivation materials used in solar cell applications (i.e., SiO2, SiNx), using thermal ALD Al2O3, an increase in effective carrier lifetime after light soaking under standard testing conditions is observed for both p-type (˜45%) and n-type (˜60%) FZ c-Si lifetime samples. After light soaking and storing the samples in a dark and dry environment, the effective lifetime decreases again and practically returns to the value before light soaking. The rate of lifetime decrease after light soaking is significantly slower than the rate of lifetime increase by light soaking. To investigate the underlying mechanism, corona charge experiments are carried out on p-type c-Si samples before and after light soaking. The results indicate that the negative fixed charge density Qf present in the Al2O3 films increases due to the light soaking, which results in an improved field-effect passivation. Numerical calculations also confirm that the improved field-effect passivation is the main contributor for the increased effective lifetime after light soaking. To further understand the light soaking phenomenon, a kinetic model—a charge trapping/de-trapping model—is proposed to explain the time dependent behavior of the lifetime increase/decrease observed under/after light soaking. The trap model fits the experimental results very well. The observed light enhanced passivation for ALD Al2O3 passivated c-Si is of technological relevance, because solar cell devices operate under illumination, thus an increase in solar cell efficiency due to light soaking can be expected.

  8. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Pomaska, M., E-mail: m.pomaksa@fz-juelich.de [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Beyer, W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin (Germany); Neumann, E. [Forschungszentrum Jülich, PGI-8-PT, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Finger, F.; Ding, K. [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany)

    2015-11-30

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO{sub x}:H/intrinsic a-SiO{sub x}:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO{sub x}:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO{sub x}:H/a-SiO{sub x}:H stack a promising front layer configuration • Void expansion at a-SiO{sub x}:H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  9. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji

    2016-10-11

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  10. Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

    Science.gov (United States)

    Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; de Wolf, Stefaan; Ballif, Christophe

    2017-04-01

    For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

  11. Sinusoidal nanotextures for light management in silicon thin-film solar cells

    Science.gov (United States)

    Köppel, G.; Rech, B.; Becker, C.

    2016-04-01

    Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

  12. Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

    KAUST Repository

    Tomasi, Andrea

    2017-04-24

    For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

  13. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  14. Rapid mitigation of carrier-induced degradation in commercial silicon solar cells

    Science.gov (United States)

    Hallam, Brett J.; Chan, Catherine E.; Chen, Ran; Wang, Sisi; Ji, Jingjia; Mai, Ly; Abbott, Malcolm D.; Payne, David N. R.; Kim, Moonyong; Chen, Daniel; Chong, CheeMun; Wenham, Stuart R.

    2017-08-01

    We report on the progress for the understanding of carrier-induced degradation (CID) in p-type mono and multi-crystalline silicon (mc-Si) solar cells, and methods of mitigation. Defect formation is a key aspect to mitigating CID. Illuminated annealing can be used for both mono and mc-Si solar cells to reduce CID. The latest results of an 8-s UNSW advanced hydrogenation process applied to industrial p-type Czochralski PERC solar cells are shown with average efficiency enhancements of 1.1% absolute from eight different solar cell manufacturers. Results from three new industrial CID mitigation tools are presented, reducing CID to 0.8-1.1% relative, compared to 4.2% relative on control cells. Similar advanced hydrogenation processes can also be applied to multi-crystalline silicon passivated emitter with rear local contact (PERC) cells, however to date, the processes take longer and are less effective. Modifications to the firing processes can also suppress CID in multi-crystalline cells during subsequent illumination. The most stable results are achieved with a multi-stage process consisting of a second firing process at a reduced firing temperature, followed by extended illuminated annealing.

  15. Sunlight-thin nanophotonic monocrystalline silicon solar cells

    Science.gov (United States)

    Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

    2017-09-01

    Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

  16. Reduction of picosecond laser ablation threshold and damage via nanosecond pre-pulse for removal of dielectric layers on silicon solar cells

    Science.gov (United States)

    Brand, A. A.; Meyer, F.; Nekarda, J.-F.; Preu, R.

    2014-10-01

    Laser microstructuring of thin dielectric layers on sensitive electronic devices, such as crystalline silicon solar cells, requires a careful design of the laser ablation process. For instance, degradation of the substrate's crystallinity can vastly decrease minority carrier lifetime and consequently impair the efficiency of such devices. Short-pulse laser ablation seems well suited for clean and spatially confined structuring because of the small heat-affected zone in the remaining substrate material [Dube and Gonsiorawski in Conference record of the twenty first IEEE photovoltaic specialists conference, 624-628 1990]. The short-time regimes, however, generate steep temperature gradients that can lead to amorphization of the remaining silicon surface. By `heating' the substrate via a non-ablative laser pulse in the nanosecond regime before the actual ablation pulse occurs we are able to prevent amorphization of the surface of the silicon solar cell substrate, while lowering the ablation thresholds of a SiNx layer on crystalline silicon wafers.

  17. a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    LI Xudong; XU Ying; CHE Xiaoqi

    2006-01-01

    Silicon thin-film solar cells are considered to be one of the most promising cells in the future for their potential advantages, such as low cost, high efficiency, great stability, simple processing, and none-pollution. In this paper, latest progress on poly-crystalline silicon solar cells on ceramic substrates achieved by our group was reported. Rapid thermal chemical vapor deposition (RTCVD) was used to deposited poly-crystalline silicon thin films, and the grains of as-grown film were enlarged by Zone-melting Recrystallization (ZMR). As a great changein cell's structure, traditional diffused pn homojunction was replaced by a-Si/c-Si heterojunction, which lead is to distinct improvement in cell's efficiency.A conversion efficiency of 3.42% has been achieved on 1cm2 a-Si/c-Si heterojunction solar cell ( Isc =16.93 mA, Voc =310.9 mV, FF =06493, AM =1.5 G,24 ℃), while the cell with diffused homojunction only gotan efficiency of 0.6%. It indicates that a-Si emitter formed at low temperature might be more suitable for thin film cell on ceramics.

  18. Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells

    DEFF Research Database (Denmark)

    Jørgensen, Anders Michael; Clausen, Thomas; Leistiko, Otto

    1998-01-01

    62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol...... (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick...

  19. Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyomin Park

    2012-01-01

    Full Text Available To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

  20. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  1. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    Science.gov (United States)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  2. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  3. Detailed balance limit efficiency of silicon intermediate band solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Quan; Ma Zhi-Hua; Xue Chun-Lai; Zuo Yu-Hua; Wang Qi-Ming

    2011-01-01

    The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC),which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration,improving greatly than 40.7% of the Shockley-Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the siliconbased solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV,and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%,having a better potential.

  4. Application of PECVD for bulk and surface passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krygowski, T.; Doshi, P.; Cai, L.; Doolittle, A.; Rohatgi, A. [Georgia Inst. of Technology, Atlanta, GA (United States)

    1995-08-01

    Plasma enhanced chemical vapor deposition (PECVD) passivation of bulk and surface defects has been shown to be an important technique to improve the performance of multicrystalline silicon (mc-Si) and single crystalline silicon solar cells. In this paper, we report the status of our on-going investigation into the bulk and surface passivation properties of PECVD insulators for photovoltaic applications. The objective of this paper is to demonstrate the ability of PECVD films to passivate the front (emitter) surface, bulk, and back surface by proper tailoring of deposition and post-PECVD annealing conditions.

  5. Post passivation light trapping back contacts for silicon heterojunction solar cells.

    Science.gov (United States)

    Smeets, M; Bittkau, K; Lentz, F; Richter, A; Ding, K; Carius, R; Rau, U; Paetzold, U W

    2016-11-10

    Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient light-trapping back contacts, subsequent to the passivation of Si heterojunction solar cells. The back contacts are realized by texturing an amorphous silicon layer with a refractive index close to the one of crystalline silicon at the back side of the silicon wafer. As a result, decoupling of optically active and electrically active layers is introduced. In the long run, the presented concept has the potential to improve light trapping in monolithic Si multijunction solar cells as well as solar cell configurations where texturing of the Si absorber surfaces usually results in a deterioration of the electrical properties. As part of this study, different light-trapping textures were applied to prototype silicon heterojunction solar cells. The best path length enhancement factors, at high passivation quality, were obtained with light-trapping textures based on randomly distributed craters. Comparing a planar reference solar cell with an absorber thickness of 280 μm and additional anti-reflection coating, the short-circuit current density (JSC) improves for a similar solar cell with light-trapping back contact. Due to the light trapping back contact, the JSC is enhanced around 1.8 mA cm(-2) to 38.5 mA cm(-2) due to light trapping in the wavelength range between 1000 nm and 1150 nm.

  6. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  7. Innovative laser based solar cell scribing

    Science.gov (United States)

    Frei, Bruno; Schneeberger, Stefan; Witte, Reiner

    2011-03-01

    The solar photovoltaic market is continuously growing utilizing boths crystalline silicon (c-Si) as well as thin film technologies. This growth is directly dependant on the manufacturing costs for solar cells. Factors for cost reduction are innovative ideas for an optimization of precision and throughput. Lasers are excellent tools to provide highly efficient processes with impressive accuracy. They need to be used in combination with fast and precise motion systems for a maximum gain in the manufacturing process, yielding best cost of ownership. In this article such an innovative solution is presented for laser scribing in thin film Si modules. A combination of a new glass substrate holding system combined with a fast and precise motion system is the foundation for a cost effective scribing machine. In addition, the advantages of fiber lasers in beam delivery and beam quality guarantee not only shorter setup and down times but also high resolution and reproducibility for the scribing processes P1, P2 and P3. The precision of the whole system allows to reduce the dead zone to a minimum and therefore to improve the efficiency of the modules.

  8. Progress in nanostructured photoanodes for dye-sensitized solar cells

    Science.gov (United States)

    Liu, Xueyang; Fang, Jian; Liu, Yong; Lin, Tong

    2016-09-01

    Solar cells represent a principal energy technology to convert light into electricity. Commercial solar cells are at present predominately produced by single- or multi-crystalline silicon wafers. The main drawback to silicon-based solar cells, however, is high material and manufacturing costs. Dye-sensitized solar cells (DSSCs) have attracted much attention during recent years because of the low production cost and other advantages. The photoanode (working electrode) plays a key role in determining the performance of DSSCs. In particular, nanostructured photoanodes with a large surface area, high electron transfer efficiency, and low electron recombination facilitate to prepare DSSCs with high energy conversion efficiency. In this review article, we summarize recent progress in the development of novel photoanodes for DSSCs. Effect of semiconductor material (e.g. TiO2, ZnO, SnO2, N2O5, and nano carbon), preparation, morphology and structure (e.g. nanoparticles, nanorods, nanofibers, nanotubes, fiber/particle composites, and hierarchical structure) on photovoltaic performance of DSSCs is described. The possibility of replacing silicon-based solar cells with DSSCs is discussed.

  9. Electricity from photovoltaic solar cells. Flat-Plate Solar Array Project of the US Department of Energy's National Photovoltaics Program: 10 years of progress

    Science.gov (United States)

    Christensen, Elmer

    1985-01-01

    The objectives were to develop the flat-plate photovoltaic (PV) array technologies required for large-scale terrestrial use late in the 1980s and in the 1990s; advance crystalline silicon PV technologies; develop the technologies required to convert thin-film PV research results into viable module and array technology; and to stimulate transfer of knowledge of advanced PV materials, solar cells, modules, and arrays to the PV community. Progress reached on attaining these goals, along with future recommendations are discussed.

  10. QE and Suns-Voc study on the epitaxial CSiTF solar cells

    Institute of Scientific and Technical Information of China (English)

    AI Bin; SHEN Hui; BAN Qun; LIANG Zongcun; CHEN Rulong; SHI Zhengrong; LIAO Xianbo

    2005-01-01

    In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-Voc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates.The results show that the epi-layers deposited on the SSP ribbons have rough surfaces,which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I02 (the dark saturation current of space charge region) values and too low Rsh (parallel resistance) values. The higher I02 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower Rsh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

  11. mc-Si:H/c-Si solar cell prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    XU Ying; LIAO Xianbo; DIAO Hongwei; Li Xudong; ZENG Xiangbo; LIU Xiaoping; WANG Minhua; WANG Wenjing

    2006-01-01

    Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.

  12. BEHIND (Back Enhanced Heterostructure with Interdigitated contact) Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    Tucci, M.; Serenelli, L.; Salza, E.; Pirozzi, L. [ENEA Research Center Casaccia, Via Anguillarese 301, 00123 Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M.; Martufi, P. [Electronic Engineering University of Rome ' Sapienza' , via Eudossiana 18, 00184 Roma (Italy); De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands)

    2008-09-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern. An open-circuit voltage of 695 mV has been measured on this device fabricated. The mask assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Several technological aspects that limit the fill factor are considered and discussed.

  13. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  14. Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Khedher, N.; Hajji, M.; Bessais, B.; Ezzaouia, H.; Bennaceur, R. [Laboratoire des Applications Solaires, Institut National de Recherche Scientifique et Technique, BP. 95, Hammam Lif (Tunisia); Selmi, A. [Laboratoire de Physique des Semi-conducteurs, Faculte des Sciences de Monastir, 5000 Monastir (Tunisia)

    2005-06-01

    In this paper, we report a study on the possibility of gettering transition metal impurities from solar grade crystalline silicon (Si). Porous silicon layers were formed by the stain-etching method on both sides of the Si wafer. Aluminum diffusion was done throughout the PS layer in an infrared furnace under a (N{sub 2}/O{sub 2}) controlled atmosphere. This enables to getter eventual metal impurities towards the PS layer. The gettering effect was evaluated by measuring the majority carrier density and mobility and the minority carrier diffusion length (L{sub d}) of the Si substrate. For this purpose, Wander Pauw and Hall Effect measurements together with the Light Beam Induced Current (LBIC) technique were used. We noticed that the best gettering corresponds to a heat treatment at 850 C for 30 min; in that case an evident decrease of the majority carrier density and an enhancement of the mobility were observed. After gettering, we found an apparent improvement of the minority carrier diffusion length. These results give evidence of the effectiveness of external gettering treatments by combining (Al-PS) layer for an efficient gettering effect in solar grade monocrystalline Si. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jie, E-mail: j.cui@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia); Grant, Nicholas [Centre for Sustainable Energy Systems, Australian National University, Canberra, A.C.T. 0200 (Australia); Lennon, Alison [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia)

    2014-12-30

    Highlights: • The surface passivation by anodic SiO{sub 2} formed by light-induced anodisation is investigated. • The anodic SiO{sub 2} grows lower temperatures with shorter growth times. After annealing in oxygen and then forming gas the effective minority carrier lifetime is increased to 150 μs. • It shows a very low positive Q{sub eff} of 3.4 × 10{sup 11} cm{sup −2}, a moderate D{sub it} of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. • It has a very low leakage current density suggesting its application in solar cell as a functional dielectric. - Abstract: Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO{sub 2}) was investigated. The anodic SiO{sub 2} was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3–5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO{sub 2} formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance–voltage measurements demonstrated a very low positive charge density of 3.4 × 10{sup 11} cm{sup −2} and a moderate density of interface states of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. This corresponded to a silicon surface recombination velocity of 62 cm s{sup −1}, which is comparable with values reported for other anodic SiO{sub 2} films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10{sup −10} and 1.6 × 10{sup −9} A cm{sup −2} at 1 and −1 V, respectively, was measured for LIA SiO{sub 2} suggesting its potential application as insulation layer in

  16. Visible to near-infrared down-shifting in Tm3+ doped fluoride glasses for solar cells efficiency enhancement

    Science.gov (United States)

    Maalej, Olfa; Merigeon, Julien; Boulard, Brigitte; Girtan, Mihaela

    2016-10-01

    In this paper, down-conversion of Tm3+ doped fluoride ZLAG glasses with composition of 70.2ZrF4-(23.4-x)LaF3-0.6AlF3-5.8GaF3-xTmF3 (x = 0.25, 0.5, 0.75, 1, 2, 3 and 5 mol%) were tested as encapsulation materials for solar cells. The current density - voltage (J-V) characterizations were performed under solar simulator irradiation. The influence of Tm3+ concentration on the mono crystalline silicon solar cells performances was investigated. A slight increase of the solar cell efficiency was observed in the case of fluoride ZLAG for Tm3+ doping concentrations up to 1 mol% Tm3+. Further increase of the Tm3+ concentration leads to a decrease of solar cell conversion efficiency as a result of concentration quenching.

  17. Nanostructured Solar Cells.

    Science.gov (United States)

    Chen, Guanying; Ning, Zhijun; Ågren, Hans

    2016-08-09

    We are glad to announce the Special Issue "Nanostructured Solar Cells", published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

  18. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured...... due to cell fractures, and the additional series resistance losses observed under illumination. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stress test and initial and final module flash testing...

  19. A Solar Powered Wireless Computer Mouse: Design, Assembly and Preliminary Testing of 15 Prototypes

    NARCIS (Netherlands)

    van Sark, W.G.J.H.M.; Reich, N.H.; Alsema, E.A.; Netten, M.P.; Veefkind, M.; Silvester, S.; Elzen, B.; Verwaal, M.

    2007-01-01

    The concept and design of a solar powered wireless computer mouse has been completed, and 15 prototypes have been successfully assembled. After necessary cutting, the crystalline silicon cells show satisfactory efficiency: up to 14% when implemented into the mouse device. The implemented voltage

  20. A Solar Powered Wireless Computer Mouse: Design, Assembly and Preliminary Testing of 15 Prototypes

    NARCIS (Netherlands)

    van Sark, W.G.J.H.M.; Reich, N.H.; Alsema, E.A.; Netten, M.P.; Veefkind, M.; Silvester, S.; Elzen, B.; Verwaal, M.

    2007-01-01

    The concept and design of a solar powered wireless computer mouse has been completed, and 15 prototypes have been successfully assembled. After necessary cutting, the crystalline silicon cells show satisfactory efficiency: up to 14% when implemented into the mouse device. The implemented voltage con

  1. Broadband Absorption Enhancement in Thin Film Solar Cells Using Asymmetric Double-Sided Pyramid Gratings

    Science.gov (United States)

    Alshal, Mohamed A.; Allam, Nageh K.

    2016-11-01

    A design for a highly efficient modified grating crystalline silicon (c-Si) thin film solar cell is demonstrated and analyzed using the two-dimensional (2-D) finite element method. The suggested grating has a double-sided pyramidal structure. The incorporation of the modified grating in a c-Si thin film solar cell offers a promising route to harvest light into the few micrometers active layer. Furthermore, a layer of silicon nitride is used as an antireflection coating (ARC). Additionally, the light trapping through the suggested design is significantly enhanced by the asymmetry of the top and bottom pyramids. The effects of the thickness of the active layer and facet angle of the pyramid on the spectral absorption, ultimate efficiency ( η), and short-circuit current density ( J sc) are investigated. The numerical results showed 87.9% efficiency improvement over the conventional thin film c-Si solar cell counterpart without gratings.

  2. Nanostructured Solar Cells

    Science.gov (United States)

    Chen, Guanying; Ning, Zhijun; Ågren, Hans

    2016-01-01

    We are glad to announce the Special Issue “Nanostructured Solar Cells”, published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

  3. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  4. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  5. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    Science.gov (United States)

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  6. Dynamics of interstitial hydrogen molecules in crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Estreicher, S.K.; Wells, K. [Department of Physics, Texas Tech University, Lubbock, TX (United States); Fedders, P.A. [Department of Physics, Washington University, St. Louis, MO (United States); Ordejon, Pablo [Institut de Ciencia de Materiales de Barcelona, CSIC, Campus de la UAB, Bellaterra, Barcelona (Spain)

    2001-07-23

    The static and dynamic properties of interstitial H{sub 2}, HD and D{sub 2} molecules in crystalline silicon are obtained from ab initio molecular-dynamics simulations with atomic-like basis sets. The static (T=0) calculations agree with those of most other authors: the centre of mass (CM) of H{sub 2} is at the tetrahedral interstitial (T) site, the molecule is a nearly-free rotator, and the activation energy for diffusion is 0.90 eV. However, these results fail to explain a number of experimental observations, such as why H{sub 2} is infrared (IR) active, why the expected ortho/para splitting is not present, why the symmetry is C{sub 1}, why the piezospectroscopic tensors of H{sub 2} and D{sub 2} are identical or why the exposure to an H/D mix results in a single HD line which is not only at the wrong place but also much weaker than expected. In the present work, we extend the static calculations to include the constant-temperature dynamics for H{sub 2} in Si. At T>0 K, the CM of the molecule no longer remains at the T site. Instead, H{sub 2} 'bounces' off the walls of its tetrahedral cage and exchanges energy with the host crystal. The average position of the CM is away from the T site along <100>. Under uniaxial stress, the CM shifts off that axis and the molecule has C{sub 1} symmetry. The H-H stretch frequency calculated from the Fourier transform of the v-v autocorrelation function is close to the measured one. Since the potential energy experienced by H{sub 2} in Si near the T site is very flat, we argue that H{sub 2} should be a nearly free quantum mechanical rotator. Up to room temperature, only the j=0 and j=1 rotational states are occupied, H{sub 2} resembles a sphere rather than a dumbbell, the symmetry is determined by the position of the CM and HD is equivalent to DH in any symmetry. The rapid motion of the CM implies that an ortho-to-para transition will occur if a large magnetic moment is nearby. Several candidates are proposed. Since

  7. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao [School of Electronic Science and Engineering, Southeast University, Nanjing 210096, Jiangsu Province (China)

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  8. Light-trapping design for thin-film silicon-perovskite tandem solar cells

    Science.gov (United States)

    Foster, Stephen; John, Sajeev

    2016-09-01

    Using finite-difference time-domain simulations, we investigate the optical properties of tandem silicon/perovskite solar cells with a photonic crystal architecture, consisting of a square-lattice array of inverted pyramids with a center-to-center spacing of 2.5 μm. We demonstrate that near-perfect light-trapping and absorption can be achieved over the 300-1100 nm wavelength range with this architecture, using less than 10 μm (equivalent bulk thickness) of crystalline silicon. Using a one-diode model, we obtain projected efficiencies of over 30% for the two-terminal tandem cell under a current-matching condition, well beyond the current record for single-junction silicon solar cells. The architecture is amenable to mass fabrication through wet-etching and uses a fraction of the silicon of traditional designs, making it an attractive alternative to other silicon-perovskite tandem designs.

  9. Research and development of photovoltaic power system. Research on surface passivation for high-efficiency silicon solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Hyomen passivation no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T. [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on surface passivation of high-efficiency silicon solar cells. In research on carrier recombination on SiO2/doped silicon interface, measurements were carried out on minority carrier life with respect to p-type silicon substrates with which phosphorus with high and low concentrations are diffused uniformly on the surface and non-uniformly on the back and then oxidized. The measurements were performed for the purpose of evaluating the carrier recombination at p-n junctions. Effective life time of oxidized test samples increased longer than that of prior to the oxidization as a result of effect of surface passivation contributing remarkably. In research on reduction in carrier recombination on SiO2/Si interface by using H radical annealing, experiments were conducted by using a method that uses more active H-atoms. As a result, it was revealed that the reduction effect is recognized at as low temperature as 200{degree}C, and photo-bias effect is also noticeable. Other research activities included analytic research on minority carrier recombination on micro crystalline silicon/crystalline silicon interface, and experimental research on evaluation of minority carrier life of poly-crystalline silicon wafers. 6 figs.

  10. Properties of interfaces in amorphous/crystalline silicon heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Olibet, Sara; Vallat-Sauvain, Evelyne; Fesquet, Luc; Damon-Lacoste, Jerome; De Wolf, Stefaan; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), IMT, Photovoltaics and Thin Film Electronics Laboratory, Breguet 2, 2000 Neuchatel (Switzerland); Monachon, Christian; Hessler-Wyser, Aicha [Ecole Polytechnique Federale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), 1015 Lausanne (Switzerland)

    2010-03-15

    To study recombination at the amorphous/crystalline Si (a-Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a-Si:H and tunable field-effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a-Si:H/c-Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross-sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c-Si is studied in combination with transmission electron microscopy. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Determining the Onset of Amorphization of Crystalline Silicon due to Hypervelocity Impact

    Science.gov (United States)

    Poletti, C. Shane; Bachlechner, Martina E.

    2009-03-01

    Atomistic simulations were performed to study a hypervelocity impactor striking a silicon/silicon nitride interface with varying silicon substrate thicknesses. Visualization indicates that the crystalline silicon amorphizes upon impact. The objective of the present study is to determine where the boundary between amorphous and crystalline silicon occurrs. In the analysis, the silicon substrate is separated into sixty layers and for each layer the average z displacement is determined. Our results show that the boundary between amorphous and crystalline silicon occurs between layers 20 and 22 for an impactor traveling at 5 km/s. This corresponds to a depth of approximately 32 Angstroms into the silicon. More detailed analyses reveals that the z displacement is noticeably larger for the layers that do not have a silicon atom bonded beneath them compared to the ones that do.

  12. Study of the diffusion of points defects in crystalline silicon using the kinetic ART method

    Science.gov (United States)

    Trochet, Mickael; Brommer, Peter; Beland, Laurent-Karim; Joly, Jean-Francois; Mousseau, Normand

    2013-03-01

    Because of the long-time scale involved, the activated diffusion of point defects is often studied in standard molecular dynamics at high temperatures only, making it more difficult to characterize complex diffusion mechanisms. Here, we turn to the study of point defect diffusion in crystalline silicon using kinetic ART (kART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building based on the activation-relaxation technique (ART nouveau). By generating catalogs of diffusion mechanisms and fully incorporating elastic and off-lattice effects, kART is a unique tool for characterizing this problem. More precisely, using kART with the standard Stillinger-Weber potential we consider the evolution of crystalline cells with 1 to 4 vacancies and 1 to 4 interstitials at various temperatures and to provide a detailed picture of both the atomistic diffusion mechanisms and overall kinetics in addition to identifying special configurations such as a 2-interstitial super-diffuser.

  13. Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method

    Science.gov (United States)

    Trochet, Mickaël; Béland, Laurent Karim; Joly, Jean-François; Brommer, Peter; Mousseau, Normand

    2015-06-01

    We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities based on the activation-relaxation technique (ART nouveau), coupled to the standard Stillinger-Weber potential. We focus more particularly on the evolution of crystalline cells with one to four vacancies and one to four interstitials in order to provide a detailed picture of both the atomistic diffusion mechanisms and overall kinetics. We show formation energies, activation barriers for the ground state of all eight systems, and migration barriers for those systems that diffuse. Additionally, we characterize diffusion paths and special configurations such as dumbbell complex, di-interstitial (IV-pair+2I) superdiffuser, tetrahedral vacancy complex, and more. This study points to an unsuspected dynamical richness even for this apparently simple system that can only be uncovered by exhaustive and systematic approaches such as the kinetic activation-relaxation technique.

  14. Efficient interdigitated back-contacted silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mingirulli, Nicola; Haschke, Jan; Schulze, Tim F.; Duesterhoeft, J.; Korte, Lars; Rech, Bernd [Helmholtz-Zentrum Berlin (HZB), Institute of Silicon Photovoltaics, Kekulestrasse 5, 12489 Berlin (Germany); Gogolin, Ralf; Ferre, Rafel; Harder, Nils-Peter; Brendel, Rolf [Institute for Solar Energy Research Hameln (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany)

    2011-04-15

    We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiN{sub x} /SiO{sub 2} passivated phosphorus-diffused front surface field. V{sub oc} calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high V{sub oc}, as known for both-side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell V{sub oc} of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture-area efficiency increases from 19.8 {+-} 0.4% to 20.2 {+-} 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Veith-Wolf, Boris [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari [Optitune International Pte. Ltd., 20 Maxwell Road, #05-08 Maxwell House, Singapore 069113 (Singapore); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover (Germany)

    2015-02-02

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  16. Buffer layer between a planar optical concentrator and a solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Solano, Manuel E. [Departamento de Ingeniería Matemática and CI" 2 MA, Universidad de Concepción, Concepción, Casilla 160-C (Chile); Barber, Greg D. [Penn State Institute of Energy and the Environment, Pennsylvania State University, University Park, PA 16802 (United States); Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States); Lakhtakia, Akhlesh [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802 (United States); Faryad, Muhammad [Department of Physics, Lahore University of Management Sciences, Lahore 54792 (Pakistan); Monk, Peter B. [Department of Mathematical Sciences, University of Delaware, Newark, DE 19716 (United States); Mallouk, Thomas E. [Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States)

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  17. Exciton Dynamics in Alternative Solar Cell Materials: Polymers, Nanocrystals, and Small Molecules

    Science.gov (United States)

    Pundsack, Thomas J.

    To keep fossil fuel usage in 2040 even with 2010 usage, 50% of global energy will need to come from alternative sources such as solar cells. While the photovoltaic market is currently dominated by crystalline silicon, there are many low-cost solar cell materials such as conjugated polymers, semiconductor nanocrystals, and organic small molecules which could compete with fossil fuels. To create cost-competitive devices, understanding the excited state dynamics of these materials is necessary. The first section of this thesis looks at aggregation in poly(3-hexylthiophene) (P3HT) which is commonly used in organic photovoltaics. The amount of aggregation in P3HT thin films was controlled by using a mixture of regioregular and regiorandom P3HT. Even with few aggregates present, excited states were found to transfer from amorphous to aggregate domains in fits and the most reasonable fitting parameters.

  18. Preparation and single molecule structure of electroactive polysilane end-grafted on a crystalline silicon surface

    Science.gov (United States)

    Furukawa, Kazuaki; Ebata, Keisuke

    2000-12-01

    Electrically active polysilanes of poly(methylphenylsilane) (PMPS) and poly[bis(p-n-butylphenyl)silane] (PBPS), which are, respectively, known as a good hole transporting material and a near-ultraviolet electroluminescent material, are end-grafted directly on a crystalline silicon surface. The single polysilane molecules are clearly distinguished one from the other on the surface by means of atomic force microscopy observations. End-grafted single molecules of PMPS are observed as dots while end-grafted PBPS appear as worms extending for more than 100 nm on the crystalline silicon surface.

  19. Physical basis for the design of CdS/CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D.F. (Mexico)

    2006-04-14

    Solar cells based on polycrystalline semiconductor thin films have great potential for decreasing the cost of photovoltaic energy. However, this kind of solar cells has characteristics very different from those fabricated on crystalline silicon for which the carrier-transport and behavior is clearly known. Instead, for hetero-junction solar cells made on less known polycrystalline materials the design is almost empirical. In this work, several physical aspects related to the behavior of polycrystalline thin film solar cells will be discussed, and some considerations for an adequate design of this kind of solar cells will be made. For example, the recombination at the grain boundaries and its influence on the short circuit current as a function of the crystallite sizes on the active material is considered. Based on this, the appropriate thickness of each layer and their resistivity will be discussed. As an example, these considerations will be applied to CdS/CdTe heterojunction solar cells, taking into account typical properties of CdTe thin films used for solar cells. (author)

  20. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    Science.gov (United States)

    Werner, Jérémie; Walter, Arnaud; Rucavado, Esteban; Moon, Soo-Jin; Sacchetto, Davide; Rienaecker, Michael; Peibst, Robby; Brendel, Rolf; Niquille, Xavier; De Wolf, Stefaan; Löper, Philipp; Morales-Masis, Monica; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2016-12-01

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells.

  1. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    KAUST Repository

    Werner, Jérémie

    2016-12-05

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)

  2. Silicon solar cells reaching the efficiency limits: from simple to complex modelling

    Science.gov (United States)

    Kowalczewski, Piotr; Redorici, Lisa; Bozzola, Angelo; Andreani, Lucio Claudio

    2016-05-01

    Numerical modelling is pivotal in the development of high efficiency solar cells. In this contribution we present different approaches to model the solar cell performance: the diode equation, a generalization of the well-known Hovel model, and a complete device modelling. In all three approaches we implement a Lambertian light trapping, which is often considered as a benchmark for the optical design of solar cells. We quantify the range of parameters for which all three approaches give the same results, and highlight the advantages and limitations of different models. Using these methods we calculate the efficiency limits of single-junction crystalline silicon solar cells in a wide range of cell thickness. We find that silicon solar cells close to the efficiency limits operate in the high-injection (rather than in the low-injection) regime. In such a regime, surface recombination can have an unexpectedly large effect on cells with the absorber thickness lower than a few tens of microns. Finally, we calculate the limiting efficiency of tandem silicon-perovskite solar cells, and we determine the optimal thickness of the bottom silicon cell for different band gaps of the perovskite material.

  3. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Pater; Sera, Dezso

    2015-09-15

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stress test, and initial and final module flash testing, to determine the power degradation characteristic of the module.

  4. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Pater; Sera, Dezso

    2015-09-15

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stress test, and initial and final module flash testing, to determine the power degradation characteristic of the module.

  5. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  6. Crystalline-silicon photovoltaics summary module design and reliability

    Science.gov (United States)

    Ross, R. G., Jr.

    The evolution of the design and reliability of solar modules was described. Design requirements involved 14 different considerations, including residential building and material electrical codes, wind-loading, hail impact, operating temperature levels, module flammability, and interfaces for both the array structure and the operation of the system. Reliability research involved in diverse investigations including glass-fracture strength, soiling levels, electrochemical corrosion, and bypass-diode qualification tests. Based on these internationally recognized studies, performance assessments, and failure analyses, the Flat-plate Solar Array Project in its 11-year duration served to nuture the development of 45 different solar module designs from 15 PV manufacturers.

  7. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  8. The Light-Induced Field-Effect Solar Cell Concept - Perovskite Nanoparticle Coating Introduces Polarization Enhancing Silicon Cell Efficiency.

    Science.gov (United States)

    Wang, Yusheng; Xia, Zhouhui; Liu, Lijia; Xu, Weidong; Yuan, Zhongcheng; Zhang, Yupeng; Sirringhaus, Henning; Lifshitz, Yeshayahu; Lee, Shui-Tong; Bao, Qiaoliang; Sun, Baoquan

    2017-03-03

    Solar cell generates electrical energy from light one via pulling excited carrier away under built-in asymmetry. Doped semiconductor with antireflection layer is general strategy to achieve this including crystalline silicon (c-Si) solar cell. However, loss of extra energy beyond band gap and light reflection in particular wavelength range is known to hinder the efficiency of c-Si cell. Here, it is found that part of short wavelength sunlight can be converted into polarization electrical field, which strengthens asymmetry in organic-c-Si heterojunction solar cell through molecule alignment process. The light harvested by organometal trihalide perovskite nanoparticles (NPs) induces molecular alignment on a conducting polymer, which generates positive electrical surface field. Furthermore, a "field-effect solar cell" is successfully developed and implemented by combining perovskite NPs with organic/c-Si heterojunction associating with light-induced molecule alignment, which achieves an efficiency of 14.3%. In comparison, the device with the analogous structure without perovskite NPs only exhibits an efficiency of 12.7%. This finding provides a novel concept to design solar cell by sacrificing part of sunlight to provide "extra" asymmetrical field continuously as to drive photogenerated carrier toward respective contacts under direct sunlight. Moreover, it also points out a method to combine promising perovskite material with c-Si solar cell.

  9. Efficient light harvesting by photon downconversion and light trapping in hybrid ZnS nanoparticles/Si nanotips solar cells.

    Science.gov (United States)

    Huang, Chun-Ying; Wang, Di-Yan; Wang, Chun-Hsiung; Chen, Yung-Ting; Wang, Yaw-Tyng; Jiang, You-Ting; Yang, Ying-Jay; Chen, Chia-Chun; Chen, Yang-Fang

    2010-10-26

    A hybrid colloidal ZnS nanoparticles/Si nanotips p-n active layer has been demonstrated to have promising potential for efficient solar spectrum utilization in crystalline silicon-based solar cells. The hybrid solar cell shows an enhancement of 20% in the short-circuit current and approximately 10% in power conversion efficiency compared to its counterpart without integrating ZnS nanoparticles. The enhancement has been investigated by external quantum efficiency, photoluminescence excitation spectrum, photoluminescence, and reflectance to distinct the role of ZnS quantum dots for light harvesting. It is concluded that ZnS nanoparticles not only act as frequency downconversion centers in the ultraviolet region but also serve as antireflection coating for light trapping in the measured spectral regime. Our approach is ready to be extended to many other material systems for the creation of highly efficient photovoltaic devices.

  10. Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In order to enhance light absorption of thin film poly-crystalline silicon(TF poly-Si)solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory,the effective photon trapping flux(EPTF)and effective photon trapping efficiency(EPTE)were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures.The EPTF,EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer.With an optimum size and density of SiO2/Au nanoshell light trapping layer,the EPTE could reach up to 40%due to the enhancement of light trapping over a broad spectral range,especially from 500 to 800 nm.

  11. Material effects in manufacturing of silicon based solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Schieferdecker, Anja; Sachse, Jens-Uwe; Mueller, Torsten; Seidel, Ulf; Bartholomaeus, Lars; Germershausen, Sven; Perras, Reinhold; Meissner, Rita; Hoebbel, Helmut; Schenke, Andreas; Bhatti, A.K.; Kuesters, Karl Heinz [Conergy Solar Module GmbH and Co. KG, Conergy Str. 8, 15236 Frankfurt/Oder (Germany); Richter, Hans [IHP, Im Technologiepark 25, 15236 Frankfurt/Oder (Germany); GFWW, Im Technologiepark 1, 15236 Frankfurt/Oder (Germany)

    2011-03-15

    The performance and efficiency of solar cells depends strongly on influence of materials. Key topics for solar cell optimisation are presently silicon material properties and materials for cell metallisation. Optimisation of silicon is focussed e.g. on material properties such as impurity content, density of dislocation and grain boundaries in multi-crystalline silicon which influence parameters like carrier lifetime, and therefore the cell efficiency. Improved characterisation methods of solar cells like electroluminescence and photoluminescence are combined with techniques such as thermography and LBIC to improve production process and materials. As a result cell efficiency will be increased. Optimisation of cell metallisation and module interconnects is strongly related to progress in paste materials for front side metallisation. Improved materials enable the use of higher emitter resistance and the printing of smaller metal lines, while reducing the series resistance of the solar cell. Progress in paste materials leads to increased solar cell efficiency for the standard cell process. The introduction of new metal pastes has to be combined with careful optimisation of the process window in soldering during module built-up. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  13. Nanostructured Organic Solar Cells

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

    Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

  14. Solar Photovoltaic Cells.

    Science.gov (United States)

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  15. Solar Photovoltaic Cells.

    Science.gov (United States)

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  16. Optical Properties of Spin-Coated TiO2 Antireflection Films on Textured Single-Crystalline Silicon Substrates

    Directory of Open Access Journals (Sweden)

    Ryosuke Watanabe

    2015-01-01

    Full Text Available Antireflection coating (ARC prepared by a wet process is beneficial for low cost fabrication of photovoltaic cells. In this study, we investigated optical properties and morphologies of spin-coated TiO2 ARCs on alkaline textured single-crystalline silicon wafers. Reflectance spectra of the spin-coated ARCs on alkaline textured silicon wafers exhibit no interferences and low reflectance values in the entire visible range. We modeled the structures of the spin-coated films for ray tracing numerical calculation and compared numerically calculated reflectance spectra with the experimental results. This is the first report to clarify the novel optical properties experimentally and theoretically. Optical properties of the spin-coated ARCs without interference are due to the fractional nonuniformity of the thickness of the spin-coated ARCs that cancels out the interference of the incident light.

  17. PEROVSKITE SOLAR CELLS (REVIEW ARTICLE)

    OpenAIRE

    Benli, Deniz Ahmet

    2015-01-01

    A solar cell is a device that converts sunlight into electricity. There are different types of solar cells but this report mainly focuses on a type of new generation solar cell that has the name organo-metal halide perovskite, shortly perovskite solar cells. In this respect, the efficiency of power conversion is taken into account to replace the dominancy of traditional and second generation solar cell fields by perovskite solar cells. Perovskite solar cell is a type of solar cell including a...

  18. Tuning the colors of c-Si solar cells by exploiting plasmonic effects

    Science.gov (United States)

    Peharz, G.; Grosschädl, B.; Prietl, C.; Waldhauser, W.; Wenzl, F. P.

    2016-09-01

    The color of a crystalline silicon (c-Si) solar cell is mainly determined by its anti-reflective coating. This is a lambda/4 coating made from a transparent dielectric material. The thickness of the anti-reflective coating is optimized for maximal photocurrent generation, resulting in the typical blue or black colors of c-Si solar cells. However, for building-integrated photovoltaic (BiPV) applications the color of the solar cells is demanded to be tunable - ideally by a cheap and flexible coating process on standard (low cost) c-Si solar cells. Such a coating can be realized by applying plasmonic coloring which is a rapidly growing technology for high-quality color filtering and rendering for different fields of application (displays, imaging,…). In this contribution, we present results of an approach for tuning the color of standard industrial c-Si solar cells that is based on coating them with metallic nano-particles. In particular, thin films (green and brownish/red. The position of the resonance peak in the reflection spectrum was found to be almost independent from the angle of incidence. This low angular sensitivity is a clear advantage compared to alternative color tuning methods, for which additional dielectric thin films are deposited on c-Si solar cells.

  19. Plasmonic nanomesh sandwiches for ultrathin film silicon solar cells

    Science.gov (United States)

    Gao, Tongchuan; Wang, Baomin; Leu, Paul W.

    2017-02-01

    We theoretically investigate the strategy of integrating metal nanoparticles (NPs)/nanomeshes (NMs) into the top and/or bottom of crystalline silicon (c-Si) thin film solar cells for light trapping and enhanced carrier collection. C-Si thin films exhibit absorption resonances corresponding to Fabry-Pérot modes. Frontside metal NPs enhance absorption by additionally coupling light into localized surface plasmon resonances and c-Si waveguide modes, while a frontside metal NM increases absorption by coupling light into surface plasmon polaritons and c-Si waveguide modes. The frontside metal NM also functions as a flexible top electrode, which may replace conventional brittle transparent conductive oxide thin films. The backside metal NM exhibits enhanced absorption due to the coupling of light into c-Si waveguide modes and the cavity modes within the holes of metal NM. We illustrate how the optimal metal NM sandwich, consisting of NMs on both sides of a 300 nm thick c-Si with an appropriate antireflection coating (ARC), achieves a 72.9% enhancement in short-circuit current density compared with that of a 300 nm thick c-Si thin film solar cell with 100 nm thick Si3N4 ARC and 300 nm thick Ag back reflector. The current generation in the metal NM sandwich is more in the center of the thin film such that there should be less surface recombination. The uniform current generation throughout the film results in less overall recombination.

  20. SnS Thin Film Solar Cells: Perspectives and Limitations

    Directory of Open Access Journals (Sweden)

    Simone Di Mare

    2017-02-01

    Full Text Available Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements are still limiting their market diffusion. For this reason new thin film materials, such as Cu2ZnSnS4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu2ZnSnS4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs. The sulfur loss represents one of the major challenges of SnS solar cell technology.

  1. Singlet fission/silicon solar cell exceeding 100% EQE (Conference Presentation)

    Science.gov (United States)

    Pazos, Luis M.; Lee, Jumin; Kirch, Anton; Tabachnyk, Maxim; Friend, Richard H.; Ehrler, Bruno

    2016-09-01

    Current matching limits the commercialization of tandem solar cells due to their instability over spectral changes, leading to the need of using solar concentrators and trackers to keep the spectrum stable. We demonstrate that voltage-matched systems show far higher performance over spectral changes; caused by clouds, dust and other variations in atmospheric conditions. Singlet fission is a process in organic semiconductors which has shown very efficient, 200%, down-conversion yield and the generated excitations are long-lived, ideal for solar cells. As a result, the number of publications has grown exponentially in the past 5 years. Yet, so far no one has achieved to combine singlet fission with most low bandgap semiconductors, including crystalline silicon, the dominating solar cell material with a 90% share of the PV Market. Here we show that singlet fission can facilitate the fabrication of voltage-matched systems, opening a simple design route for the effective implementation of down-conversion in commercially available photovoltaic technologies, with no modification of the electronic circuitry of such. The implemention of singlet fission is achieved simply by decoupling the fabrication of the individual subcells. For this demonstration we used an ITO/PEDOT/P3HT/Pentacene/C60/Ag wide-bandgap subcell, and a commercial silicon solar cell as the low-bandgap component. We show that the combination of the two leads to the first tandem silicon solar cell which exceeds 100% external quantum efficiency.

  2. Comparative study. Thin-film technology (si-a) compared to crystalline silicon in real operating conditions; Estudio comparativo. Tecnologia de capa fina (Si-a) frente a silicio cristalino en condiciones reales de funcionamiento

    Energy Technology Data Exchange (ETDEWEB)

    Izard Gomez-Rodulfo, J.; Avellaner, J.; Sanchez, E.; Torreblanca, J.

    2010-07-01

    We present a comparative study of thin film solar modules (amorphous silicon) compared to crystalline silicon modules. This study was conducted in real operating conditions using a test bench able to obtain the characteristic curve of several modules in sequence. defined the parameter efficiency index to characterize the extent to which actual performance is close to ideal. Finally we have calculated the energy that would produce each module in the day and efficiency in relation to the energy which ideally should produce. (Author)

  3. Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes

    Science.gov (United States)

    Sun, Wen-Cheng

    To date, the most popular and dominant material for commercial solar cells is crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out of all commercial solar cells. Although the potential of crystalline-Si solar cells in supplying energy demands is enormous, their future growth will likely be constrained by two major bottlenecks. The first is the high electricity input to produce crystalline-Si solar cells and modules, and the second is the limited supply of silver (Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching terawatt-scale deployment, which means the electricity produced by crystalline-Si solar cells would never fulfill a noticeable portion of our energy demands in the future. In order to solve the issue of Ag limitation for the front metal grid, aluminum (Al) electroplating has been developed as an alternative metallization technique in the fabrication of crystalline-Si solar cells. The plating is carried out in a near-room-temperature ionic liquid by means of galvanostatic electrolysis. It has been found that dense, adherent Al deposits with resistivity in the high 10--6 Ω-cm range can be reproducibly obtained directly on Si substrates and nickel seed layers. An all-Al Si solar cell, with an electroplated Al front electrode and a screen-printed Al back electrode, has been successfully demonstrated based on commercial p-type monocrystalline-Si solar cells, and its efficiency is approaching 15%. Further optimization of the cell fabrication process, in particular a suitable patterning technique for the front silicon nitride layer, is expected to increase the efficiency of the cell to ~18%. This shows the potential of Al electroplating in cell metallization is promising and replacing Ag with Al as the front finger electrode is feasible.

  4. Reducing the Cost of Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Scanlon, B.

    2012-04-01

    Solar-powered electricity prices could soon approach those of power from coal or natural gas thanks to collaborative research with solar startup Ampulse Corporation at the National Renewable Energy Laboratory. Silicon wafers account for almost half the cost of today's solar photovoltaic panels, so reducing or eliminating wafer costs is essential to bringing prices down. Current crystalline silicon technology converts energy in a highly efficient manner; however, that technology is manufactured with processes that could stand some improvement. The industry needs a method that is less complex, creates less waste and uses less energy. First, half the refined silicon is lost as dust in the wafer-sawing process, driving module costs higher. Wafers are sawn off of large cylindrical ingots, or boules, of silicon. A typical 2-meter boule loses as many as 6,000 potential wafers during sawing. Second, the wafers produced are much thicker than necessary. To efficiently convert sunlight into electricity, the wafers need be only one-tenth the typical thickness. NREL, the Oak Ridge National Laboratory and Ampulse have partnered on an approach to eliminate this waste and dramatically lower the cost of the finished solar panels. By using a chemical vapor deposition process to grow the silicon on inexpensive foil, Ampulse is able to make the solar cells just thick enough to convert most of the solar energy into electricity. No more sawdust - and no more wasting refined silicon materials. NREL developed the technology to grow high-quality silicon and ORNL developed the metal foil that has the correct crystal structure to support that growth. Ampulse is installing a pilot manufacturing line in NREL's Process Development Integration Laboratory, where solar companies can work closely with lab scientists on integrated equipment to answer pressing questions related to their technology development, as well as rapidly overcoming R and D challenges and risk. NREL's program is

  5. Effects of intermediate plasmonic structures on the performance of ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2017-02-01

    Although solar cells can meet the increasing demand for energy of modern world, their usage is not as widespread as expected because of their high production cost and low efficiency. Thin-film and ultra-thin-film solar cells with single and multiple active layers are being investigated to reduce cost. Additionally, multiple active layers of different energy bandgaps are used in tandem in order to absorb the solar spectra more efficiently. However, the efficiency of ultra-thin-film tandem solar cells may suffer significantly mainly because of low photon absorption and current mismatch between active layers. In this work, we study the effects of intermediate plasmonic structures on the performance of ultra-thin-film tandem solar cells. We consider three structures| each with a top amorphous silicon layer and a bottom micro-crystalline silicon layer, and an intermediate plasmonic layer between them. The intermediate layer is either a metal layer with periodic holes or periodic metal strips or periodic metal nano-clusters. Using a finite difference time domain technique for incident AM 1.5 solar spectra, we show that these intermediate layers help to excite different plasmonic and photonic modes for different light polarizations, and thereby, increase the absorption of light significantly. We find that the short-circuit current density increases by 12%, 6%, and 9% when the intermediate plasmonic structure is a metal hole-array, strips, and nano-clusters, respectively, from that of a structure that does not have the intermediate plasmonic layer.

  6. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  7. Improvement of conversion efficiency of silicon solar cells using up-conversion molybdate La2Mo2O9:Yb,R (R=Er, Ho) phosphors

    Institute of Scientific and Technical Information of China (English)

    Yen-Chi Chen; Teng-Ming Chen

    2011-01-01

    The goal of this work was aimed to improve the power conversion efficiency of single crystalline silicon-based photovoltaic cells by using the solar spectral conversion principle,which employs an up-conversion phosphor to convert a low energy infrared photon to the more energetic visible photons to improve the spectral response.In this study,the surface of multicrystalline silicon solar cells was coated with an up-conversion molybdate phosphor to improve the spectral response of the solar cell in the ncar-infiared spectral range.The short circuit current (Isc),open circuit voltage (Voc),and conversion efficiency (η) of spectral conversion cells were measured.Preliminary experimental results revealed that the light conversion efficiency of a 1.5%-2.7% increase in Si-based cell was achieved.

  8. Research and development of photovoltaic power system. Characterization and control of surface/interface recombination velocity of crystalline silicon thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Silicon kessho usumaku ni okeru hyomen kaimen saiketsugo sokudo no hyoka to seigyo

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, H. [Hokkaido University, Sapporo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on characterization and control of surface/interface recombination velocity of crystalline silicon thin films. To optimize design and manufacture of solar cells, it is necessary to identify correctly resistance factor (or doping) of bulk of materials, bulk minority carrier life, and recombination velocity on surface, passivation interface and electrode interface. A group in the Hokkaido University has been working since a few years ago on development of non-contact and non-destructive photo-luminescence surface level spectroscopy (PLS{sup 3}). A new non-contact C-V method was also introduced. Using these methods, basic discussions were given on possibility of separate measurements on surface/interface and bulk characteristics of solar cell materials. The PLS{sup 3} method and the non-contact C-V method were used for experimental discussions on evaluation of silicon mono-crystalline and poly-crystalline materials. Discussions were given on separate evaluations by using the DLTS method. 10 figs., 2 tabs.

  9. Lowest surface recombination velocity on n-type crystalline silicon using PECVD a-Si:H/SiNx bi-layer passivation

    Science.gov (United States)

    Stepanov, Dmitri S.; Chowdhury, Zahidur R.; Kherani, Nazir P.

    2011-08-01

    Energy conversion efficiency of crystalline silicon (c-Si) solar cells manufactured on thin substrates is strongly influenced by the recombination losses of photo-generated charge carriers at the surface and in its proximity. Intrinsic hydrogenated amorphous silicon (i-a-Si:H) deposited using DC saddle-field plasma enhanced chemical vapour deposition (PECVD) at a low temperature of ~200°C reduces recombination losses of photo-generated carriers through passivation of defects at the surface. This study reports on high quality surface passivation achieved using a dual layer approach wherein a 70nm amorphous silicon nitride (SiNx) capping layer is deposited on a less than 10nm thin i-a-Si:H layer. While the a-Si:H layer is effective in passivating the interface recombination sites, SiNx is deemed to incorporate field-effect passivation, thus providing a minority carrier mirror. Additionally, SiNx layer acts as an anti-reflection coating with a low absorption coefficient in the optical frequency range of interest. The SiNx deposition conditions, known to strongly influence the passivating quality of the dual layer structure, were systematically investigated using the response surface methodology (RSM). The optimal deposition parameters obtained from the RSM study were experimentally verified to yield the lowest surface recombination velocity of 3.5 cm/s on 1-2 Ω-cm n-type FZ c-Si using a PECVD a-Si:H/SiNx bi-layer passivation stack.

  10. The energy payback time of advanced crystalline silicon PV modules in 2020. A prospective study

    Energy Technology Data Exchange (ETDEWEB)

    Mann, S.A. [FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Van Sark, W.G.J.H.M. [Copernicus Institute, Utrecht University, CD, Utrecht (Netherlands); De Wild-Scholten, M.J. [SmartGreenScans, GH, Groet (Netherlands); Fthenakis, V.M. [Center for Life Cycle Analysis, Columbia University, New York, NY (United States); Sinke, W.C. [ECN Solar Energy, Petten (Netherlands)

    2013-02-11

    The photovoltaic (PV) market is experiencing vigorous growth, whereas prices are dropping rapidly. This growth has in large part been possible through public support, deserved for its promise to produce electricity at a low cost to the environment. It is therefore important to monitor and minimize environmental impacts associated with PV technologies. In this work, we forecast the environmental performance of crystalline silicon technologies in 2020, the year in which electricity from PV is anticipated to be competitive with wholesale electricity costs all across Europe. Our forecasts are based on technological scenario development and a prospective life cycle assessment with a thorough uncertainty and sensitivity analysis. We estimate that the energy payback time at an in-plane irradiation of 1700 kWh/(m2 year) of crystalline silicon modules can be reduced to below 0.5 years by 2020, which is less than half of the current energy payback time.

  11. Threshold for permanent refractive index change in crystalline silicon by femtosecond laser irradiation

    Science.gov (United States)

    Bachman, D.; Chen, Z.; Fedosejevs, R.; Tsui, Y. Y.; Van, V.

    2016-08-01

    An optical damage threshold for crystalline silicon from single femtosecond laser pulses was determined by detecting a permanent change in the refractive index of the material. This index change could be detected with unprecedented sensitivity by measuring the resonant wavelength shift of silicon integrated optics microring resonators irradiated with femtosecond laser pulses at 400 nm and 800 nm wavelengths. The threshold for permanent index change at 400 nm wavelength was determined to be 0.053 ± 0.007 J/cm2, which agrees with previously reported threshold values for femtosecond laser modification of crystalline silicon. However, the threshold for index change at 800 nm wavelength was found to be 0.044 ± 0.005 J/cm2, which is five times lower than the previously reported threshold values for visual change on the silicon surface. The discrepancy is attributed to possible modification of the crystallinity of silicon below the melting temperature that has not been detected before.

  12. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  13. Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy

    Science.gov (United States)

    Perný, M.; Šály, V.; Packa, J.; Mikolášek, M.; Váry, M.; Huran, J.; Hrubčín, L.; Skuratov, V. A.; Arbet, J.

    2017-04-01

    The photovoltaic efficiency of heterostructures a-SiC/c-Si may be the same or even better in comparison with conventional silicon structures when suitable adjustment of technological parameters is realized. The main advantage of heterojunction formed amorphous SiC thin film and crystalline silicon compared to standard crystalline solar cell lies in high build-in voltage and thus a high open-circuit voltage. Solar cells can be exposed to various influences of hard environment. A deterioration of properties of heterostructures (a-SiC/c-Si) due to irradiation is examined in our paper using impedance spectroscopy method. Xe ions induced damage is reflected in changes of proposed AC equivalent circuit elements. AC equivalent circuit was proposed and verified using numerical simulations. Impedance spectra were also measured at different DC bias voltages due to a more detailed understanding correlation between Xe ions induced damage and transport phenomenon in the heterostructure.

  14. Surface recombination analysis in silicon-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Barrio, R.; Gandia, J.J.; Carabe, J.; Gonzalez, N.; Torres, I. [CIEMAT, Madrid (Spain); Munoz, D.; Voz, C. [Universitat Politecnica de Catalunya, Barcelona (Spain)

    2010-02-15

    The origin of this work is the understanding of the correlation observed between efficiency and emitter-deposition temperature in single silicon-heterojunction solar cells prepared by depositing an n-doped hydrogenated-amorphous-silicon thin film onto a p-type crystalline-silicon wafer. In order to interpret these results, surface-recombination velocities have been determined by two methods, i.e. by fitting the current-voltage characteristics to a theoretical model and by means of the Quasi-Steady-State Photoconductance Technique (QSSPC). In addition, effective diffusion lengths have been estimated from internal quantum efficiencies. The analysis of these data has led to conclude that the performance of the cells studied is limited by back-surface recombination rather than by front-heterojunction quality. A 12%-efficient cell has been prepared by combining optimum emitter-deposition conditions with back-surface-field (BSF) formation by vacuum annealing of the back aluminium contact. This result has been achieved without using any transparent conductive oxide. (author)

  15. Excimer laser annealing to fabricate low cost solar cells

    Science.gov (United States)

    1984-01-01

    The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

  16. Back Enhanced Heterostructure with InterDigitated contact - BEHIND - solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Tucci, M.; Serenelli, L.; Salza, E.; Pirozzi, L. [ENEA Research Center Casaccia, Via Anguillarese 301, 00123 Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M.; Martufi, P. [Electronic Engineering University of Rome ' Sapienza' , via Eudossiana 18, 00184 Roma (Italy); De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands)

    2008-09-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithographyfree, using a metallic self-aligned mask to create the interdigitated pattern. An open-circuit voltage of 695 mV has been measured on this device fabricated. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Several technological aspects that limit the fill factor are considered and discussed.

  17. In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Wei; Hacke, Peter; Singh, Jai Prakash; Chai, Jing; Wang, Yan; Ramakrishna, Seeram; Aberle, Armin G.; Khoo, Yong Sheng

    2017-01-01

    A temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.

  18. Light Trapping for Silicon Solar Cells: Theory and Experiment

    Science.gov (United States)

    Zhao, Hui

    Crystalline silicon solar cells have been the mainstream technology for photovoltaic energy conversion since their invention in 1954. Since silicon is an indirect band gap material, its absorption coefficient is low for much of the solar spectrum, and the highest conversion efficiencies are achieved only in cells that are thicker than about 0.1 mm. Light trapping by total internal reflection is important to increase the optical absorption in silicon layers, and becomes increasingly important as the layers are thinned. Light trapping is typically characterized by the enhancement of the absorptance of a solar cell beyond the value for a single pass of the incident beam through an absorbing semiconductor layer. Using an equipartition argument, in 1982 Yablonovitch calculated an enhancement of 4n2 , where n is the refractive index. We have extracted effective light-trapping enhancements from published external quantum efficiency spectra in several dozen silicon solar cells. These results show that this "thermodynamic" enhancement has never been achieved experimentally. The reasons for incomplete light trapping could be poor anti-reflection coating, inefficient light scattering, and parasitic absorption. We report the light-trapping properties of nanocrystalline silicon nip solar cells deposited onto two types of Ag/ZnO backreflectors at United Solar Ovonic, LLC. We prepared the first type by first making silver nanparticles onto a stainless steel substrate, and then overcoating the nanoparticles with a second silver layer. The second type was prepared at United Solar using a continuous silver film. Both types were then overcoated with a ZnO film. The root mean square roughness varied from 27 to 61 nm, and diffuse reflectance at 1000 nm wavelength varied from 0.4 to 0.8. The finished cells have a thin, indium-tin oxide layer on the top that acts as an antireflection coating. For both backreflector types, the short-circuit photocurrent densities J SC for solar

  19. Optimization of the output of a solar cell per theoretical and experimental study of the models to one and two exponential

    Directory of Open Access Journals (Sweden)

    Benyoucef B.

    2012-06-01

    Full Text Available The production of electricity based on the conversion of the sunlight by photovoltaic cells containing crystalline silicon is the way most used on the technological and industrial level Consequently, the development of the terrestrial applications for the energy production requires high-output cells and low cost.The aim of our work is to present a comparative study between both theoretical and experimental models of a solar cell based silicon type PHYWE (connecting four cells in series of 80 mm diameter to improve photovoltaic performance.This study led to the determination of the parameters of the cell starting from the current-voltage characteristic, the influence of luminous flow on this characteristic as well as the effect of the incidental photons on the solar cell. We justify the interest to use the model with two exponential for the optimization of the output by underlining the insufficiency of the model to one exponential.

  20. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  1. Optimization of selective emitter fabrication method for solar cells using a laser grooving.

    Science.gov (United States)

    Jung, W W; Kim, S C; Jung, S W; Moon, I Y; Kumar, K; Lee, Y W; Kim, S Y; Ju, M K; Han, S K; Yi, J

    2011-05-01

    In this paper, screen-printing laser grooved buried contact (LGBC) method was applied, which is compatible with the existing screen-printed solar cell equipment and facilities. Experiments were performed in order to optimize short circuit current (I(sc)), open circuit voltage (V(oc)) and fill factor of high efficiency solar cells. To enhance I(sc), V(oc) and efficiency, heavy doping was performed at low sheet resistance in the laser grooved region of the cell. In contrast, light doping was carried out at a high sheet resistance in the non-laser grooved region. To increase fill factor, porous silicon found on the wafer after dipping in an HF solution to remove SiN(x), was cleared. The fabricated screen-printing LGBC solar cell using a 125 mm x 125 mm single crystalline silicon wafer exhibited an efficiency of 17.2%. The results show that screen-printing LGBC method can be applied for high efficiency solar cells.

  2. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  3. Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Meijun; Das, Ujjwal; Bowden, Stuart; Hegedus, Steven; Birmire, Robert

    2009-06-09

    In this paper, two-dimensional (2D) simulation of interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells is presented using Sentaurus Device, a software package of Synopsys TCAD. A model is established incorporating a distribution of trap states of amorphous-silicon material and thermionic emission across the amorphous-silicon / crystalline-silicon heterointerface. The 2D nature of IBC-SHJ device is evaluated and current density-voltage (J-V) curves are generated. Optimization of IBC-SHJ solar cells is then discussed through simulation. It is shown that the open circuit voltage (VOC) and short circuit current density (JSC) of IBC-SHJ solar cells increase with decreasing front surface recombination velocity. The JSC improves further with the increase of relative coverage of p-type emitter contacts, which is explained by the simulated and measured position dependent laser beam induced current (LBIC) line scan. The S-shaped J-V curves with low fill factor (FF) observed in experiments are also simulated, and three methods to improve FF by modifying the intrinsic a-Si buffer layer are suggested: (i) decreased thickness, (ii) increased conductivity, and (iii) reduced band gap. With all these optimizations, an efficiency of 26% for IBC-SHJ solar cells is potentially achievable.

  4. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  5. Rectenna solar cells

    CERN Document Server

    Moddel, Garret

    2013-01-01

    Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

  6. The 17{sup th} European photovoltaic solar energy conference and exhibition in Munich from a Swiss point of view; Die 17. europaeische Photovoltaikkonferenz in Muenchen aus Schweizer Sicht

    Energy Technology Data Exchange (ETDEWEB)

    Nowak, S.

    2002-07-01

    This report for the Swiss Federal Office of Energy (SFOE) summarises the photovoltaics (PV) conference and exhibition held in Munich in October 2001 from the Swiss point of view. The contributions made by representatives of Swiss institutions and companies are presented including papers on the progress being made in third generation crystalline and multi-crystalline silicon technology, amorphous and micro-crystalline silicon solar cells, thin film solar cells based on compound semiconductors and thermo-photovoltaics. Further papers deal with PV modules on the market, building-integrated solar power systems and new developments in PV systems technology. The exhibition that accompanied the conference, including the 12 Swiss exhibitors who were present, is reviewed as are international market developments. Contributions concerning the application of photovoltaics in developing countries are also reviewed.

  7. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  8. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  9. Elastic behavior of amorphous-crystalline silicon nanocomposite: An atomistic view

    Science.gov (United States)

    Das, Suvankar; Dutta, Amlan

    2017-01-01

    In the context of mechanical properties, nanocomposites with homogeneous chemical composition throughout the matrix and the dispersed phase are of particular interest. In this study, the elastic moduli of amorphous-crystalline silicon nanocomposite have been estimated using atomistic simulations. A comparison with the theoretical model reveals that the elastic behavior is significantly influenced by the crystal-amorphous interphase. On observing the effect of volume-fraction of the crystalline phase, an anomalous trend for the bulk modulus is obtained. This phenomenon is attributed to the relaxation displacements of the amorphous atoms.

  10. The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery.

    Science.gov (United States)

    Lei, Yisong; Yang, Yuqing; Liu, Yebing; Li, Hao; Wang, Guanquan; Hu, Rui; Xiong, Xiaoling; Luo, Shunzhong

    2014-08-01

    A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.

  11. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  12. Dye sensitized solar cells.

    Science.gov (United States)

    Wei, Di

    2010-03-16

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO(2), ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  13. Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Di Wei

    2010-03-01

    Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  14. Novel chemical cleaning of textured crystalline silicon for realizing surface recombination velocity <0.2 cm/s using passivation catalytic CVD SiN x /amorphous silicon stacked layers

    Science.gov (United States)

    Thanh Nguyen, Cong; Koyama, Koichi; Higashimine, Koichi; Terashima, Shigeki; Okamoto, Chikao; Sugiyama, Shuichiro; Ohdaira, Keisuke; Matsumura, Hideki

    2017-05-01

    In this study, the development of a novel chemical cleaning method suitable for textured surfaces of crystalline silicon (c-Si) used for solar cells is demonstrated. To remove contaminants from such textured structures, chemicals have to penetrate into their complicated fine structures. Thus, the viscosity, reaction activity, and surface tension of the chemicals are adjusted by increasing the reaction temperature or introducing a surfactant. Actually, the use of concentrated (conc.) sulfuric acid (H2SO4) of 140 °C and the introduction of methanol (CH3OH) to other chemicals contribute to the improvement of the cleaning ability in textured structures. The present cleaning method in conjunction with plasma-damage-less catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD passivation with silicon-nitride (SiN x )/amorphous silicon (a-Si) stacked layers, also contributes to the decrease in the surface recombination velocity (SRV) of c-Si. The maximum estimated SRV (SRVmax), evaluated under the assumed absence of recombination in bulk c-Si, is less than 1.1 cm/s for textured surfaces, and the real SRV, evaluated by changing the c-Si substrate thickness, is less than 0.2 cm/s.

  15. Solar cell radiation handbook

    Science.gov (United States)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  16. Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

    Energy Technology Data Exchange (ETDEWEB)

    Mora-Sero, Ivan; Luo, Yan; Garcia-Belmonte, Germa; Bisquert, Juan [Departament de Fisica, Universitat Jaume I, E-12071 Castello (Spain); Munoz, Delfina; Voz, Cristobal; Puigdollers, Joaquim; Alcubilla, Ramon [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, E-08034 Barcelona (Spain)

    2008-04-15

    Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent circuits. Shockley-Read-Hall recombination at states on the device interfaces governs the cell dynamic response. Recombination process was modeled by means of simple RC circuits which allow to determine the capture rate of electrons and holes. Carrier lifetime is found to be stated by the electron capture time {tau}{sub SRH}{approx}{tau}{sub n}, and it results in the range of 300 {mu}s. The Al-annealed back contact was regarded as the dominating recombination interface. (author)

  17. The effect of silicon and copper-indium-gallium-selenide based solar cell structures and processing on temperature dependent performance losses

    Science.gov (United States)

    Hsieh, Judith

    Temperature dependent current voltage measurements (J-V-T) of solar cells. provide both fundamental and practical information. They give detailed insight into. recombination losses within the device as well as information about module. performance losses at higher outdoor operating temperatures. In this thesis, J-V-T. measurements were applied to two distinctly different types of solar cells: crystalline. silicon heterojunction cells and thin film (AgCu)(InGa)Se2 or ACIGS polycrystalline. cells. Crystalline silicon solar cells with heterojunction structure improve the opencircuit. voltage and efficiency. Interdigitated back contact (IBC) Si solar cells obtain a. higher short-circuit current and fill factor compared to front heterojunction (FHJ) solar. cells. ACIGS solar cells have shown higher efficiencies at wider bandgap compared to. the baseline CIGS solar cells. Two high open-circuit voltage CIGS solar cells are. included and compared with ACIGS solar cells. In this thesis, the impact of different. types of solar cells structure and fabrication on temperature dependent performance. losses will be discussed. Devices with higher bandgap are predicted to have higher. open-circuit voltage and lower temperature coefficient of maximum power output. (Pmax). The correlation between temperature coefficient of Pmax and open-circuit. voltage can be found in Si FHJ cells but not Si IBC or ACIGS cells. However, ACIGS. cells show an inverse correlation between temperature coefficient of Pmax and bandgap. as expected. Analysis of diode quality factor and other parameters are interpreted. Sshape. J-V curve can reduce the device's fill factor with a relative high series resistance. This phenomenon tends to occur in FHJ cells rather than IBC at low temperature. Light-dark crossover and roll over effects are commonly seen in ACIGS cells and the. anomaly is enhanced at lower temperature. Most of FHJ and IBC cells obtain the. ideality factor between 1 and 2 while some of ACIGS

  18. Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

    Science.gov (United States)

    Arjhangmehr, Afshin; Feghhi, Seyed Amir Hossein

    2014-10-01

    Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (Pmax) of silicon solar cells is presented and correlated using the displacement damage dose (Dd) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for Pmax degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (Voc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

  19. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  20. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  1. Photovoltaic solar cell

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  2. Flexible amorphous silicon solar cells and their application to PV systems

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Y.; Fujikake, S.; Yoshida, T.; Sakai, H.; Natsume, F. [Fuji Electric Co. Ltd., Yokosuka, Kanagawa (Japan). New Energy Lab.

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) solar cells are regarded as the next generation product following crystalline silicon (c-Si) solar cells. The performance of the large area cells has been improved to a practical application level and the durability has been confirmed by a number of outdoor tests at demonstration sites under various climatic conditions. The mass production technology for realizing low cost a-Si photovoltaic (PV) modules, however, has not been developed very well and is still in an elementary stage. A flexible a-Si:H PV module has been developed, which is rolled up around a cylindrical core, has a width of about 1 m, and is able to be cut to any length. The amorphous solar cell fabricated on a heat resistant plastic film with a thickness of 50 {mu}m has a new monolithic series connected structure named SCAF (Series-Connection through Apertures formed on Film) to obtain a high output voltage required for practical use. The details of the structure and the technology of the fabrication process are described as well as some of its applications. (author). 11 figs., 3 refs.

  3. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  4. Threshold for permanent refractive index change in crystalline silicon by femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bachman, D., E-mail: bachman@ualberta.ca; Fedosejevs, R.; Tsui, Y. Y.; Van, V. [Electrical and Computer Engineering Department, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Chen, Z. [Electrical and Computer Engineering Department, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2016-08-29

    An optical damage threshold for crystalline silicon from single femtosecond laser pulses was determined by detecting a permanent change in the refractive index of the material. This index change could be detected with unprecedented sensitivity by measuring the resonant wavelength shift of silicon integrated optics microring resonators irradiated with femtosecond laser pulses at 400 nm and 800 nm wavelengths. The threshold for permanent index change at 400 nm wavelength was determined to be 0.053 ± 0.007 J/cm{sup 2}, which agrees with previously reported threshold values for femtosecond laser modification of crystalline silicon. However, the threshold for index change at 800 nm wavelength was found to be 0.044 ± 0.005 J/cm{sup 2}, which is five times lower than the previously reported threshold values for visual change on the silicon surface. The discrepancy is attributed to possible modification of the crystallinity of silicon below the melting temperature that has not been detected before.

  5. Series resistance mapping of Cu(In,Ga)Se{sub 2} solar cells by voltage dependent electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Daume, Felix; Puttnins, Stefan [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany); Scheit, Christian; Rahm, Andreas [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Grundmann, Marius [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells deposited on flexible polyimide foil promising innovative applications and a fabrication in continuous roll-to-roll processes currently reach efficiencies up to 17.6 %. The optimization of the solar cell efficiency requires the reduction of inherent losses in the cell. In order to achieve this goal preferably spatially resolved access to parameters characterizing ohmic losses like series and shunt resistances are indispensable. We apply an interpretation method for electroluminescence (EL) images taken at different voltages which is known for solar cells made of crystalline silicon from literature to solar cells made of polycrystalline CIGSe. The theory of this method to obtain a mapping of the series resistance and the EL imaging process as well as the data interpretation ils reviewed and demonstrated on an example. Furthermore, the benefit of this method for the characterization of solar cells under accelerated aging conditions (damp heat) which is important for the estimation of the long-term stability is shown.

  6. Optimal Design of Solar Cell Grid Line%太阳电池栅线优化设计

    Institute of Scientific and Technical Information of China (English)

    杨乐; 高华

    2012-01-01

    优化设计太阳电池的电极图形可以获得高的光电转换效率。文中以实例介绍了晶体硅太阳电池上丝网印刷电极的优化设计,讨论了电池的功率损耗与扩散薄层电阻及细栅线宽度的关系,在原始设计的基础上设计出了理想尺寸的太阳电池栅线。经过优化改进的太阳电池可降低由电极设计引起的总功率损失,并且提高了电池片的光电转化效率。%The electrode pattern of the optimal design for the solar cell can get the high photoelectric conversion efficiency. The optimal design of the screen-printed electrode in the crystalline silicon solar cell is introduced with the example, and the relation among the power loss in the solar cell, the diffusion sheet resistance and the width of the thin grid line is discussed. On the basis of the original design, the ideal solar cell grid line is designed. The optimal solar cell can reduce the total power loss caused by the electrode design, and increase the photoelectric conversion efficiency of the cell.

  7. Photoelectrochemical Solar Cells.

    Science.gov (United States)

    McDevitt, John T.

    1984-01-01

    This introduction to photoelectrochemical (PEC) cells reviews topics pertaining to solar energy conversion and demonstrates the ease with which a working PEC cell can be prepared with n-type silicon as the photoanode and a platinum counter electrode (both immersed in ethanolic ferrocene/ferricenium solutions). Experiments using the cell are…

  8. Application and validation of algebraic methods to predict the behaviour of crystalline silicon PV modules in Mediterranean climates

    Energy Technology Data Exchange (ETDEWEB)

    Fuentes, M.; Nofuentes, G.; Aguilera, J.; Talavera, D.L. [Grupo de Investigacion IDEA, Escuela Politecnica Superior, Universidad de Jaen, Campus de Las Lagunillas, s/n, 23071-Jaen (Spain); Castro, M. [Electrical and Computer Engineering Department, UNED, Ciudad Universitaria, Juan del Rosal, 12, 28040-Madrid (Spain)

    2007-11-15

    Predicting both PV module and generator performances under natural sunlight is a key issue for designers and installers. Five simple algebraic methods addressed to predict this behaviour in Mediterranean climates have been empirically validated. Firstly, the calibration in STC of all significant electrical parameters of both a monocrystalline and a polycrystalline silicon PV modules was entrusted to an accredited independent laboratory. Then, a 12-month test and measurement campaign carried out on these modules in the city of Jaen (Spain, latitude 38 N, longitude 3 W) has provided the necessary experimental data. Results show that (a) crystalline silicon PV module outdoors performance may be described with sufficient accuracy - for PV engineering purposes - only taking into account incident global irradiance, cell temperature, and using any one of two simple algebraic methods tried in this paper and (b) regardless the used method, poor results may be achieved if the PV specimens under study are not electrically characterised in STC prior to analysing their outdoors performance. Even so, the methods recommended in (a) perform best. (author)

  9. Thin film PV standing tall side-by-side with multi-crystalline silicon: also in terms of reliability

    Science.gov (United States)

    Dhere, Neelkanth G.; Ward, Allan; Wieting, Robert; Guha, Subhendu; Dhere, Ramesh G.

    2015-09-01

    Triple junction hydrogenated amorphous silicon (a-Si:H) have shown exceptionally good reliability and durability. Cadmium telluride, CdTe PV modules have shown the lowest production cost without subsidies. Copper-indium gallium selenide sulfide (CIGS) and cadmium telluride (CdTe) cells and modules have been showing efficiencies equal or greater than those of multi-crystalline, (mx-Si), PV modules. Early generation CIGS and CdTe PV modules had a different qualification standard 61646 as compared to 61215 for crystalline silicon, (c-Si), PV modules. This, together with small vulnerability in harsh climates, was used to create doubts about their reliability. Recently CdTe and CIGS glass-to-glass modules have passed the rigorous accelerated tests, especially as long as the edge seals are not compromised. Moreover, the cumulative shipment of these modules is more than 12 GW demonstrating the customer confidence in these products. Hence it can be stated that also in terms of the reliability and durability all the thin film PV modules stand tall and compare favorably with mx-Si.

  10. Relationship between cross-linking conditions of ethylene vinyl acetate and potential induced degradation for crystalline silicon photovoltaic modules

    Science.gov (United States)

    Jonai, Sachiko; Hara, Kohjiro; Tsutsui, Yuji; Nakahama, Hidenari; Masuda, Atsushi

    2015-08-01

    In this study, we investigated the relationship in crystalline silicon (c-Si) photovoltaic (PV) modules between the cross-linking level of copolymer of ethylene and vinyl acetate (EVA) as the encapsulant and the degree of degradation due to potential induced degradation (PID) phenomenon. We used three methods for the determination of cross-linking level of EVA: xylene method, which is one of the solvent extraction methods (SEM), curing degree by differential scanning calorimetry (DSC), and viscoelastic properties by dynamic mechanical analysis (DMA). The results indicate that degradation of PV modules by PID test depends on the cross-linking level of EVA. The PV modules encapsulated by EVA with higher cross-linking level show lower degradation degree due to PID phenomenon. Also we showed that EVA with higher cross-linking level tended to be higher volume resistivity. This tendency is similar to that for electrical resistance value during the PID test. The PID test was also done by changing thickness of EVA between front cover glass and c-Si with the same cross-linking level. The PV modules encapsulated by thicker EVA between front cover glass and c-Si cell show lower degradation by PID. From these results, the PV modules encapsulated by EVA with higher cross-linking level, higher volume resistivity and increased thickness would be tolerant of PID phenomenon.

  11. Welded solar cell interconnection

    Science.gov (United States)

    Stofel, E. J.; Browne, E. R.; Meese, R. A.; Vendura, G. J.

    1982-01-01

    The efficiency of the welding of solar-cell interconnects is compared with the efficiency of soldering such interconnects, and the cases in which welding may be superior are examined. Emphasis is placed on ultrasonic welding; attention is given to the solar-cell welding machine, the application of the welding process to different solar-cell configurations, producibility, and long-life performance of welded interconnects. Much of the present work has been directed toward providing increased confidence in the reliability of welding using conditions approximating those that would occur with large-scale array production. It is concluded that there is as yet insufficient data to determine which of three methods (soldering, parallel gap welding, and ultrasonic welding) provides the longest-duration solar panel life.

  12. Performance and Loss Analyses of High-Efficiency Chemical Bath Deposition (CBD)-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    Science.gov (United States)

    Pudov, Alexei; Sites, James; Nakada, Tokio

    2002-06-01

    Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS{\\slash}CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

  13. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji

    2017-06-24

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20Wm (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000Wm); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

  14. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Directory of Open Access Journals (Sweden)

    Miao Tan

    2017-08-01

    Full Text Available We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i the work function of the transparent conductive oxide layer, (ii the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si interface, (iii the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H layer, and (iv the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  15. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Science.gov (United States)

    Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

    2017-08-01

    We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  16. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  17. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  18. 单晶硅太阳电池制备工艺探讨%Discussion on Preparation Technology of Crystal Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    何京鸿; 赵恒利; 李雷

    2012-01-01

    The article describes the fabrication techniques of crystalline silicon solar cells, and the adjustment range of technological parameters are given by experiments. The contributions and attentions of each progress are explained, and kinds of methods are presented to improve the efficiency of the solar cells by optimizing technological process.%本文介绍目前晶体硅太阳电池制造工艺,通过实验给出各个工艺流程的工艺参数及可调节范围,说明各环节对太阳电池的贡献及注意问题。提出了通过优化各工艺流程来提高晶体硅太阳电池效率的一些方法。

  19. Optimization of Rear Local Contacts on High Efficiency PERC Solar Cells Structures

    Directory of Open Access Journals (Sweden)

    Kapila Wijekoon

    2013-01-01

    Full Text Available A local contact formation process and integration scheme have been developed for the fabrication of rear passivated point contact solar cells. Conversion efficiency of 19.6% was achieved using  mm, pseudo square, p-type single crystalline silicon wafers. This is a significant improvement when compared to unpassivated, full area aluminum back surface field solar cells, which exhibit only 18.9% conversion efficiency on the same wafer type. The effect of rear contact formation on cell efficiency was studied as a function of contact area and contact pitch, hence the metallization fraction. Contact shape and the thickness of Al-BSF layer were found to be heavily dependent on the laser ablation pattern and contact area. Simulated cell parameters as a function of metallization showed that there is a tradeoff between open circuit voltage and fill factor gains as the metallization fraction varies. The rear surface was passivated with an Al2O3 layer and a capping layer. The rear surface contact pattern was created by laser ablation and the contact geometry was optimized to obtain voids free contact filling, resulting in a uniform back surface field. The efficiency gain in rear passivated cells over the reference cells is mainly due to improved short circuit current and open circuit voltage.

  20. Novel low-cost approach for removal of surface contamination before texturization of commercial monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, U. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India); School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Dhungel, S.K.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Mondal, A.K. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 71103 (India); Saha, H. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India)

    2007-07-23

    This paper reports a novel approach on the surface treatment of monocrystalline silicon solar cells using an inorganic chemical, sodium hypochlorite (NaOCl) that has some remarkable properties. The treatment of contaminated crystalline silicon wafer with hot NaOCl helps the removal of organic contaminants due to its oxidizing properties. The objective of this paper is to establish the effectiveness of this treatment using hot NaOCl solution before the saw damage removal step of the conventional NaOH texturing approach. A comparative study of surface morphology and FTIR analyses of textured monocrystalline silicon surfaces with and without NaOCl pre-treatment is also reported. The process could result in a significant low cost approach viable for cleaning silicon wafers on a mass production scale. (author)

  1. Improvement on electrical properties of screen-printed silicon solar cells by light-induced electroplating of silver

    Science.gov (United States)

    Li, Tao; Wang, Wenjing

    2016-10-01

    The total power losses are analyzed based on two-layer electrode of light-induced electroplating after screen printing. By the introduction of scale factor in the calculation, optical losses are closer to the actual condition. Optimized two-layer contact of front side could diminish power losses distinctly and improve the current-voltage (I-V) characteristic of crystalline silicon solar cells. The relative increments of I-V parameters as a function of electroplating time are measured. The quantitative comparison of analytical results between half-ellipse shape model and half-circled shape model is performed. The numerical simulation results and experimental data show good agreement. Due to the successful verification, the simulation results could be used to optimize the two-layer electrode structure and light-induced electroplating process.

  2. Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

    Science.gov (United States)

    Yang, Zhenhai; Shang, Aixue; Qin, Linling; Zhan, Yaohui; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-04-01

    We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 μm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 μm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10  mA/cm2 in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

  3. The solar photovoltaic; Solaire photovoltaique

    Energy Technology Data Exchange (ETDEWEB)

    Bal, J.L. [Agence de l' Environnement et de la Maitrise de l' Energie, ADEME, 75 - Paris (France)

    2004-08-01

    This document presents the main topics discussed during the european conference on the solar photovoltaic, which took place at Paris in June 2004. The different cells technologies, the connected systems to the network, the different integration systems and the development and sellback tariffs are discussed. The photovoltaic industry in Germany, Japan and California is detailed. A special interest is given to the black silicon, a more absorbent silicon. This silicon is elaborated from crystalline silicon, by an exposition to a pulse laser (1000 milliards of watt) in halogen gaseous atmosphere. (A.L.B.)

  4. High Rate Laser Pitting Technique for Solar Cell Texturing

    Energy Technology Data Exchange (ETDEWEB)

    Hans J. Herfurth; Henrikki Pantsar

    2013-01-10

    High rate laser pitting technique for solar cell texturing Efficiency of crystalline silicon solar cells can be improved by creating a texture on the surface to increase optical absorption. Different techniques have been developed for texturing, with the current state-of-the-art (SOA) being wet chemical etching. The process has poor optical performance, produces surfaces that are difficult to passivate or contact and is relatively expensive due to the use of hazardous chemicals. This project shall develop an alternative process for texturing mc-Si using laser micromachining. It will have the following features compared to the current SOA texturing process: -Superior optical surfaces for reduced front-surface reflection and enhanced optical absorption in thin mc-Si substrates -Improved surface passivation -More easily integrated into advanced back-contact cell concepts -Reduced use of hazardous chemicals and waste treatment -Similar or lower cost The process is based on laser pitting. The objective is to develop and demonstrate a high rate laser pitting process which will exceed the rate of former laser texturing processes by a factor of ten. The laser and scanning technologies will be demonstrated on a laboratory scale, but will use inherently technologies that can easily be scaled to production rates. The drastic increase in process velocity is required for the process to be implemented as an in-line process in PV manufacturing. The project includes laser process development, development of advanced optical systems for beam manipulation and cell reflectivity and efficiency testing. An improvement of over 0.5% absolute in efficiency is anticipated after laser-based texturing. The surface textures will be characterized optically, and solar cells will be fabricated with the new laser texturing to ensure that the new process is compatible with high-efficiency cell processing. The result will be demonstration of a prototype process that is suitable for scale-up to a

  5. Transparent solar cell module

    Science.gov (United States)

    Antonides, G. J.; Dillard, P. A.; Fritz, W. M.; Lott, D. P.

    1979-01-01

    Modified solar cell module uses high transmission glass and adhesives, and heat dissipation to boost power per unit area by 25% (9.84% efficiency based on cell area at 60 C and 100 mW/sq cm flux). Design is suited for automatic production and is potentially more cost effective.

  6. Semiperiodicity versus periodicity for ultra broadband optical absorption in thin-film solar cells

    Science.gov (United States)

    Jalali, Mandana; Nadgaran, Hamid; Erni, Daniel

    2016-07-01

    We propose the use of one-dimensional semiperiodic front and back gratings based on Thue-Morse, Fibonacci, and Rudin-Shapiro (RS) binary sequences as promising photon management techniques for enhancing ultra-broadband optical absorption in thin-film solar cells. The semiperiodicity allows an aggregate light in-coupling into the active layer within the range of the solar spectrum that is less weak compared to an inherently broadband random grating, but has a much larger bandwidth than the strong in-coupling via a periodic grating configuration. The proper design procedure proposed here deviates from a canonical double grating synthesis as it adheres to an ultra-broadband design where the spectrally integrated absorption in the active material is the proper subject to optimization, leaving the grating perturbations just a measure to perturb and mold the trapped light field in the active layer accordingly. It is shown that by using a well-defined RS double grating in a 400-nm thick crystalline silicon solar cell, a 110.2% enhancement of the spectrally integrated optical absorption can be achieved relative to the reference case without grating.

  7. Towards the efficiency limits of silicon solar cells: how thin is too thin?

    CERN Document Server

    Kowalczewski, Piotr

    2015-01-01

    It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\\,\\mu\\mathrm{m}$. In this work, we use a model single-junction solar cell to calculate the limits of energy conversion efficiency and estimate the optimal absorber thickness. The limiting efficiency for cells in the thickness range between 40 and $500\\,\\mu\\mathrm{m}$ is very similar and close to 29%. In this regard, we argue that decreasing the thickness below around $40\\,\\mu\\mathrm{m}$ is counter-productive, as it significantly reduces the maximum achievable efficiency, even when optimal light trapping is implemented. We analyse the roles of incomplete light trapping and extrinsic (bulk and surface) recombination mechanisms. For a reasonably high material quality, consistent with present-day fabrication techniques, the optimal thickness is always higher than a few tens of micrometers. We identify incomplete light ...

  8. Selective functionalization and loading of biomolecules in crystalline silicon nanotube field-effect-transistors.

    Science.gov (United States)

    Kwon, Soonshin; Chen, Zack C Y; Noh, Hyunwoo; Lee, Ju Hun; Liu, Hang; Cha, Jennifer N; Xiang, Jie

    2014-07-21

    Crystalline silicon nanotubes (Si NTs) provide distinctive advantages as electrical and biochemical analysis scaffolds through their unique morphology and electrical tunability compared to solid nanowires or amorphous/non-conductive nanotubes. Such potential is investigated in this report. Gate-dependent four-probe current-voltage analysis reveals electrical properties such as resistivity to differ by nearly 3 orders of magnitude between crystalline and amorphous Si NTs. Analysis of transistor transfer characteristics yields a field effect mobility of 40.0 cm(2) V(-1) s(-1) in crystalline Si NTs. The hollow morphology also allows selective inner/outer surface functionalization and loading capability either as a carrier for molecular targets or as a nanofluidic channel for biomolecular assays. We present for the first time a demonstration of internalization of fluorescent dyes (rhodamine) and biomolecules (BSA) in Si NTs as long as 22 μm in length.

  9. Phase field modeling of grain structure evolution during directional solidification of multi-crystalline silicon sheet

    Science.gov (United States)

    Lin, H. K.; Lan, C. W.

    2017-10-01

    Evolution of grain structures and grain boundaries (GBs), especially the coincident site lattice GBs, during directional solidification of multi-crystalline silicon sheet are simulated by using a phase field model for the first time. Since the coincident site lattice GBs having lower mobility, tend to follow their own crystallographic directions despite thermal gradients, the anisotropic energy and mobility of GBs are considered in the model. Three basic interactions of GBs during solidification are examined and they are consistent with experiments. The twinning process for new grain formation is further added in the simulation by considering twin nucleation. The effect of initial distribution of GB types and grain orientations is also investigated for the twinning frequency and the evolution of grain size and GB types.

  10. Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Hieu T., E-mail: hieu.nguyen@anu.edu.au; Macdonald, Daniel [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200 (Australia); Baker-Finch, Simeon C. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200 (Australia); PV Lighthouse, Coledale, NSW 2515 (Australia)

    2014-03-17

    The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.

  11. Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission

    Science.gov (United States)

    Sakata, Isao; Kawanami, Hitoshi

    2008-09-01

    We measured the band lineup of gallium phosphide (GaP) on crystalline silicon (c-Si) heterojunctions (HJs) by using internal photoemission (IPE), where the heterojunctions were prepared by using solid-source molecular beam epitaxy. It was found that the conduction-band and valence-band discontinuities, denoted by ΔEc and ΔEv, are 0.09+/-0.01 and 1.05+/-0.01 eV, respectively. By performing measurements on samples with different GaP layer thicknesses, we clarified that ΔEv of the present GaP-on-Si HJs is not affected by strain normal to the growth direction. The values of ΔEc and ΔEv obtained for the GaP-on-Si HJs are significantly different from those reported for thin Si-on-GaP HJs, and the implications of this discrepancy are briefly discussed.

  12. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  13. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    Science.gov (United States)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  14. Periodic surface structures on crystalline silicon created by 532 nm picosecond Nd:YAG laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Trtica, M.S. [Physical Chemistry Department, Vinca Institute of Nuclear Sciences, P.O. BOX 522, 11001 Belgrade (Serbia)], E-mail: etrtica@vin.bg.ac.yu; Gakovic, B.M. [Atomic Physics Department, Vinca Institute of Nuclear Sciences, P.O. BOX 522, 11001 Belgrade (Serbia); Radak, B.B. [Physical Chemistry Department, Vinca Institute of Nuclear Sciences, P.O. BOX 522, 11001 Belgrade (Serbia); Batani, D.; Desai, T.; Bussoli, M. [Dipartimento di Fisica ' G. Occhialini' , Universita degli Studi di Milano Bicocca, Piazza della Scienza 3, 20126 Milano (Italy)

    2007-12-30

    Creation of laser-induced morphology features, particularly laser-induced periodic surface structures (LIPSS), by a 532 nm picosecond Nd:YAG laser on crystalline silicon is reported. The LIPSS, often termed ripples, were produced at average laser irradiation fluences of 0.7, 1.6, and 7.9 J cm{sup -2}. Two types of ripples were registered: micro-ripples (at micrometer scale) in the form of straight parallel lines extending over the entire irradiated spot, and nano-ripples (at nanometer scale), apparently concentric, registered only at the rim of the spot, with the periodicity dependent on laser fluence. There are indications that the parallel ripples are a consequence of the partial periodicity contained in the diffraction modulated laser beam, and the nano-ripples are very likely frozen capillary waves. The damage threshold fluence was estimated at 0.6 J cm{sup -2}.

  15. Application of nano-crystalline silicon film in the fabrication of field-emission pressure sensor

    Institute of Scientific and Technical Information of China (English)

    廖波; 陈旻; 孔德文; 张大成; 李婷

    2003-01-01

    A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3-9 nm and 30-40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.

  16. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

    1998-10-01

    Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

  17. Optoelectronics of solar cells

    CERN Document Server

    Smestad, Greg P

    2002-01-01

    With concerns about worldwide environmental security, global warming, and climate change due to emissions of carbon dioxide from the burning of fossil fuels, it is desirable to have a wide range of energy technologies in a nation's portfolio. Photovoltaics, or solar cells, are a viable option as a nonpolluting renewable energy source. This text is designed to be an overview of photovoltaic solar cells for those in the fields of optics and optical engineering, as well as those who are interested in energy policy, economics, and the requirements for efficient photo-to-electric energy conversion.

  18. Dye solar cell research

    CSIR Research Space (South Africa)

    Cummings, F

    2009-11-01

    Full Text Available stream_source_info Cummings_2009.pdf.txt stream_content_type text/plain stream_size 3362 Content-Encoding UTF-8 stream_name Cummings_2009.pdf.txt Content-Type text/plain; charset=UTF-8 DYE SOLAR CELL RESEARCH Franscious... Cummings Energy and Processes Materials Science and Manufacturing Council for Scientific and Industrial Research P.O. Box 395 Pretoria 0001, South Africa 27 November 2009 CONTENT head2rightBackground head2rightCSIR Dye Solar Cell Research head2...

  19. Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, S.A. [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation); Osipov, A.V., E-mail: Andrey.V.Osipov@gmail.com [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation)

    2017-05-01

    This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. In the proposed hydraulic model, the dependences of the film thickness both on the gas pressure and time have been calculated. It was shown that not only the qualitative but also quantitative correspondence between theoretical and experimental results takes place. As one would expect, due to the Einstein relation, at short growth times the drift model coincides with the diffusion one. Consequences of this drift mechanism of epitaxial film growing are discussed. - Graphical abstract: This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. - Highlights: • It is established that the greater pressure, the smaller is the reaction rate. • The reaction product prevents penetration of the reagent into a reaction zone. • For description the hydraulic model of crystal lattice channels is developed. • Theoretical results for polytropic

  20. In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity-freeze stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. We analyze dark I-V curves measured...

  1. Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-01

    The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells and the technological development for crystalline compound solar cells, etc. Concerning the research and development of photovoltaic power systems, reports were on the characterization and control of surface/interface recombination velocity of crystalline silicon thin films and the research on surface passivation for high-efficiency silicon solar cells, etc. In regard to the utilization technology of solar thermal energy, the energy conversion technology using chemical reactions and the development of chemical refrigeration and cold storage systems using solar heat were reported as the research and development of utilization technology of solar thermal systems for industrial use.

  2. Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-04-01

    In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

  3. Historic Developments, Current Technologies and Potential of Nanotechnology to Develop Next Generation Solar Cells with Improved Efficiency

    Directory of Open Access Journals (Sweden)

    Nisith Raval

    2015-07-01

    Full Text Available Sun is the continuous source of renewable energy, from where we can get abundant of solar energy. Concept of conversionof solar energy into heat was used back in 200 B.C. since then, the solar cells have been developed which can convert solar energy into theelectrical energy and these systems have been produced commercially. The technologies to enhance the power conversion efficiency (PCEhave been continuously improved. Different technologies used for developing solar cells can be categorized either on the basis of materialused or techniques of technology development which is further termed as ‘first generation’ (e.g. crystalline silicon, ‘second generation’(thin films of Amorphous silicon, Copper indium gallium selenide, Cadmium telluride, ‘Third generation’ (Concentrated, Organic and Dyesensitize solar cell. These technologies give PCE up to 25% depending on the technology and the materials used. Nanotechnology enablesthe use of nanomaterial whose size is below 100 nm with extraordinary properties which has the capability to enhance the PCE to greaterextent. Various nanomaterials like Quantum Dots, Quantum well, carbon nanotubes, Nanowire and graphene have been used to makeefficient and economical solar cells, which not only provide high conversion efficiency economically but also are easy to produce. Today,by using nanotechnology, conversion efficiency up to 44.7 % has been achieved by Fraunhofer Institute at Germany. In this review article,we have reviewed the literature including various patents and publications, summarized the history of solar cell development, developmentof different technologies and rationale of their development highlighting the advantages and challenges involved in their development forcommercial purpose. We have also included the recent developments in solar cell research where different nanomaterials have beendesigned and used successfully to prove their superiority over conventional systems.

  4. NASA Facts, Solar Cells.

    Science.gov (United States)

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  5. Nanoimprinted polymer solar cell.

    Science.gov (United States)

    Yang, Yi; Mielczarek, Kamil; Aryal, Mukti; Zakhidov, Anvar; Hu, Walter

    2012-04-24

    Among the various organic photovoltaic devices, the conjugated polymer/fullerene approach has drawn the most research interest. The performance of these types of solar cells is greatly determined by the nanoscale morphology of the two components (donor/acceptor) and the molecular orientation/crystallinity in the photoactive layer. A vertically bicontinuous and interdigitized heterojunction between donor and acceptor has been regarded as one of the ideal structures to enable both efficient charge separation and transport. Synergistic control of polymer orientation in the nanostructured heterojunction is also critical to improve the performance of polymer solar cells. Nanoimprint lithography has emerged as a new approach to simultaneously control both the heterojunction morphology and polymer chains in organic photovoltaics. Currently, in the area of nanoimprinted polymer solar cells, much progress has been achieved in the fabrication of nanostructured morphology, control of molecular orientation/crystallinity, deposition of acceptor materials, patterned electrodes, understanding of structure-property correlations, and device performance. This review article summarizes the recent studies on nanoimprinted polymer solar cells and discusses the outstanding challenges and opportunities for future work.

  6. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime%低温退火磷吸杂工艺对低少子寿命铸造多晶硅电性能的影响

    Institute of Scientific and Technical Information of China (English)

    姜丽丽; 路忠林; 张凤鸣; 鲁雄

    2013-01-01

      本文针对低少子寿命铸造多晶硅片进行试验,通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺,去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷,提高低少子寿命多晶硅所生产的太阳电池各项电性能.通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较,证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅,制备的太阳电池光电转换效率比其他实验组高0.2%,表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量.本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中,提高铸造多晶硅材料在太阳能领域的利用率,节约铸造多晶硅的生产成本.%A new low-temperature annealing phosphorous gettering process (LTAPGP) was developed to improve the electrical properties of multi-crystalline silicon which has a low minority carrier lifetime. LTAPGP combined a multi-plateau temperature phosphorous gettering process and a low-temperature annealing process. LTAPGP can remove the iron impurities and crystallographic defects of multi-crystalline silicon, and improve the electrical properties of silicon solar cells that were produced from low minority carrier lifetime silicon wafers. Compared with multi-plateau and two-plateau temperature phosphorous gettering process, LTAPGP was more effective in gettering iron impurities and repairing crystallographic defects. The multi-crystalline silicon wafers with a low minority carrier lifetime went through an LTAPGP process were utilized to produce solar cells. The IV-measurement data prove that the efficiency of the new solar cells is 0.2% higher than that of specimens subject to the multi-plateau and two

  7. Thin, Lightweight Solar Cell

    Science.gov (United States)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  8. Degradation of CIGS solar cells

    NARCIS (Netherlands)

    Theelen, M.J.

    2015-01-01

    Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a combinatio

  9. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

    1998-12-31

    Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

  10. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    Science.gov (United States)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  11. Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

    2015-06-23

    Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

  12. Enhancement of photoconversion efficiency in dye-sensitized solar cells exploiting pulsed laser deposited niobium pentoxide blocking layers

    Energy Technology Data Exchange (ETDEWEB)

    Sacco, Adriano, E-mail: adriano.sacco@iit.it [Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Di Bella, Maurizio Salvatore [Department of Energy, Information Engineering and Mathematical Models (DEIM), Thin Films Laboratory, Università di Palermo, Viale delle Scienze, Building 9, 90128 Palermo (Italy); Gerosa, Matteo [Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Applied Science and Technology Department (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Chiodoni, Angelica; Bianco, Stefano [Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Mosca, Mauro; Macaluso, Roberto; Calì, Claudio [Department of Energy, Information Engineering and Mathematical Models (DEIM), Thin Films Laboratory, Università di Palermo, Viale delle Scienze, Building 9, 90128 Palermo (Italy); Pirri, Candido Fabrizio [Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Applied Science and Technology Department (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy)

    2015-01-01

    Among all the photovoltaic technologies developed so far, dye-sensitized solar cells are considered as a promising alternative to the expensive and environmentally unfriendly crystalline silicon-based solar cells. One of the possible strategies employed to increase their photovoltaic efficiency is to reduce the charge recombination at the cell conductive substrate through the use of a compact blocking layer. In this paper, we report on the fabrication and characterization of dye-sensitized solar cells employing niobium pentoxide (Nb{sub 2}O{sub 5}) thin film blocking layer deposited through the pulsed laser deposition technique on conductive substrates. The careful selection of the optimal film thickness led to a 30% enhancement of the photoconversion efficiency with respect to reference cells fabricated without blocking layer. Open circuit voltage decay and electrochemical impedance spectroscopy techniques proved that the effective suppression of the charge recombination occurring at the substrate/electrolyte interface represents the main reason for the improvement of the photovoltaic efficiency. - Highlights: • Niobium pentoxide thin films were fabricated through pulsed laser deposition. • The deposited films were employed as recombination blocking layer in DSCs. • The selection of the optimal film thickness led to the enhancement of the efficiency.

  13. Planar Micro-Optic Solar Concentration

    Science.gov (United States)

    Karp, Jason Harris

    Solar radiation can be converted directly into electricity with materials exhibiting a photovoltaic response. Most photovoltaic arrays use crystalline silicon cells assembled in large modules which convert 80% optical efficiency at 300x geometric concentration. In addition, I develop a self-aligned fabrication process to assemble several small-scale prototypes using commercially-available components. These systems were experimentally measured at 52.3% optical efficiency. Lastly, I show how the waveguide geometry can be exploited to increase performance and add functionality within concentrator photovoltaic systems.

  14. N型背接触晶硅太阳电池前表面场研究%Front surface field on N type back contact crystalline silicon solar cell

    Institute of Scientific and Technical Information of China (English)

    周涛; 赵洋; 陆晓东; 张鹏; 李媛

    2015-01-01

    利用Silvaco公司的Athena工艺仿真软件和Atlas器件仿真软件,对N型插指背结背接触(Interdigitated Back Contact,IBC)晶硅太阳电池普遍采用的前表面场(FSF)结构进行研究,详细分析了IBC晶硅电池FSF表面掺杂浓度及扩散深度对电池性能的影响.结果表明:具有不同表面掺杂浓度和扩散深度的FSF对IBC晶硅太阳电池短路电流密度(Jsc)、开路电压(Voc)和填充因子(FF)产生显著影响,从而影响电池的转换效率(Eff).具有较低表面浓度、深扩散FSF结构的IBC晶硅太阳电池可获得较高转换效率,当表面掺杂浓度为5×1017 cm-3时,电池转换效率Eff最高,且随FSF扩散深度增加略有增加,最高转换效率可达22.3%.

  15. EDITORIAL: Nanostructured solar cells Nanostructured solar cells

    Science.gov (United States)

    Greenham, Neil C.; Grätzel, Michael

    2008-10-01

    Conversion into electrical power of even a small fraction of the solar radiation incident on the Earth's surface has the potential to satisfy the world's energy demands without generating CO2 emissions. Current photovoltaic technology is not yet fulfilling this promise, largely due to the high cost of the electricity produced. Although the challenges of storage and distribution should not be underestimated, a major bottleneck lies in the photovoltaic devices themselves. Improving efficiency is part of the solution, but diminishing returns in that area mean that reducing the manufacturing cost is absolutely vital, whilst still retaining good efficiencies and device lifetimes. Solution-processible materials, e.g. organic molecules, conjugated polymers and semiconductor nanoparticles, offer new routes to the low-cost production of solar cells. The challenge here is that absorbing light in an organic material produces a coulombically bound exciton that requires dissociation at a donor-acceptor heterojunction. A thickness of at least 100 nm is required to absorb the incident light, but excitons only diffuse a few nanometres before decaying. The problem is therefore intrinsically at the nano-scale: we need composite devices with a large area of internal donor-acceptor interface, but where each carrier has a pathway to the respective electrode. Dye-sensitized and bulk heterojunction cells have nanostructures which approach this challenge in different ways, and leading research in this area is described in many of the articles in this special issue. This issue is not restricted to organic or dye-sensitized photovoltaics, since nanotechnology can also play an important role in devices based on more conventional inorganic materials. In these materials, the electronic properties can be controlled, tuned and in some cases completely changed by nanoscale confinement. Also, the techniques of nanoscience are the natural ones for investigating the localized states, particularly at

  16. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  17. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  18. One step lithography-less silicon nanomanufacturing for low cost high-efficiency solar cell production

    Science.gov (United States)

    Chen, Yi; Liu, Logan

    2014-03-01

    To improve light absorption, previously various antireflection material layers were created on solar wafer surface including multilayer dielectric film, nanoparticle sludges, microtextures, noble metal plasmonic nanoparticles and 3D silicon nanostructure arrays. All of these approaches involve nanoscale prepatterning, surface-area-sensitive assembly processes or extreme fabrication conditions; therefore, they are often limited by the associated high cost and low yield as well as the consequent industry incompatibility. In comparison, our nanomanufacturing, an unique synchronized and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE), offers a better antireflection solution along with the potential to increase p-n junction surface area. High density and high aspect ratio anechoic nanocone arrays are repeatedly and reliably created on the entire surface of single and poly crystalline silicon wafers as well as amorphous silicon thin films within 5 minutes under room temperature. The nanocone surface had lower than 5% reflection over the entire solar spectrum and a desirable omnidirectional absorption property. Using the nanotextured solar wafer, a 156mm × 156mm 18.1%-efficient black silicon solar cell was fabricated, which was an 18.3% enhancement over the cell fabricated by standard industrial processes. This process also reduces silicon loss during the texturing step and enables tighter process control by creating more uniform surface structures. Considering all the above advantages, the demonstrated nanomanufacturing process can be readily translated into current industrial silicon solar cell fabrication lines to replace the costly and ineffective wet chemical texturing and antireflective coatings.

  19. Quantum Dot Solar Cells

    Science.gov (United States)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  20. Photonic and plasmonic structures for enhancing efficiency of thin film silicon solar cells

    Science.gov (United States)

    Pattnaik, Sambit

    Crystalline silicon solar cells use high cost processing techniques as well as thick materials that are ˜ 200µm thick to convert solar energy into electricity. From a cost viewpoint, it is highly advantageous to use thin film solar cells which are generally made in the range of 0.1-3µm in thickness. Due to this low thickness, the quantity of material is greatly reduced and so is the number and complexity of steps involved to complete a device, thereby allowing a continuous processing capability improving the throughput and hence greatly decreasing the cost. This also leads to faster payback time for the end user of the photovoltaic panel. In addition, due to the low thickness and the possibility of deposition on flexible foils, the photovoltaic (PV) modules can be flexible. Such flexible PV modules are well suited for building-integrated applications and for portable, foldable, PV power products. For economical applications of solar cells, high efficiency is an important consideration. Since Si is an indirect bandgap material, a thin film of Si needs efficient light trapping to achieve high optical absorption. The previous work in this field has been mostly based on randomly textured back reflectors. In this work, we have used a novel approach, a periodic photonic and plasmonic structure, to optimize current density of the devices by absorbing longer wavelengths without hampering other properties. The two dimensional diffraction effect generated by a periodic structure with the plasmonic light concentration achieved by silver cones to efficiently propagate light in the plane at the back surface of a solar cell, achieves a significant increase in optical absorption. Using such structures, we achieved a 50%+ increase in short circuit current in a nano-crystalline (nc-Si) solar cell relative to stainless steel. In addition to nc-Si solar cells on stainless steel, we have also used the periodic photonic structure to enhance optical absorption in amorphous cells and

  1. Platinum nanoparticle interlayer promoted improvement in photovoltaic performance of silicon/PEDOT:PSS hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xiao-Qing; Liu, L.F., E-mail: lifeng.liu@inl.int

    2015-01-15

    Inorganic–organic hybrid solar cells have attracted considerable interest in recent years for their low production cost, good mechanical flexibility and ease of processing of polymer films over a large area. Particularly, silicon/conducting polymer hybrid solar cells are extensively investigated and widely believed to be a low-cost alternative to the crystalline silicon solar cells. However, the power conversion efficiency of silicon/conducting polymer solar cells remains low in case hydrogen-terminated silicon is used. In this paper, we report that by introducing a platinum nanoparticle interlayer between the hydrogen-terminated silicon and the conducting polymer poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate), namely PEDOT:PSS, the power conversion efficiency of the resulting Si/PEDOT:PSS hybrid solar cells can be improved by a factor of 2–3. The possible mechanism responsible for the improvement has been investigated using different techniques including impedance spectroscopy, Mott–Schottky analysis and intensity modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS). The results show that with a platinum nanoparticle interlayer, both the series resistance and charge transport/transfer resistance of the Si/PEDOT:PSS hybrid solar cells are reduced leading to an increased short circuit current density, and the built-in voltage at the space charge region is raised facilitating electron-hole separation. Moreover, the lifetime of charge carriers in the Si/PEDOT:PSS solar cells is extended, namely, the recombination is effectively suppressed which also contributes to the improvement of photovoltaic performance. - Graphical abstract: A platinum nanoparticle interlayer electrolessly deposited between the n-Si:H and PEDOT:PSS can markedly improve the photovoltaic performance of the resulting Si/PEDOT:PSS hybrid solar cells. - Highlights: • A Pt nanoparticle layer is introduced between the Si and PEDOT:PSS in hybrid cells. • The Pt interlayer

  2. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    Science.gov (United States)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  3. Multilayer graphene as a transparent conducting electrode in silicon heterojunction solar cells

    Science.gov (United States)

    Patel, Kamlesh; Tyagi, Pawan K.

    2015-07-01

    In this paper, the structure of a graphene/silicon heterojunction solar cell has been studied under simulated conditions. The parameters of the cell's layers have been optimized by using AFORS-HET software. Instead of reported 2D nature, we considered graphene as 3D in nature. To ensure the formation of Schottky junction, electrical contacts were made along c-axis to collect the minority carriers, which generate upon illumination. By optimizing the various parameters of n-type multilayer graphene, we achieved the best-simulated cell with the power conversion efficiency of 7.62 % at room temperature. Up to 40 layers of n-type graphene, the efficiency found to be constant and enhanced only to 7.623 %. After further optimization of the parameters of p-crystalline silicon wafer, a maximum efficiency of 11.23 % has been achieved. Temperature dependence on the cell performance has also been studied and an efficiency of 11.38 % has been achieved at 270 K. Finally, we have demonstrated that n-type multilayer graphene can act as an excellent transparent conducting electrode.

  4. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  5. Space solar cells - tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M.R. [ISRO Satellite Centre, Bangalore (India). Power Systems Group

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions:geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15 kW power for 15 years mission life in GEO and 5 kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also shows that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future. (author)

  6. Space solar cells. Tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M. Raja [Power Systems Group, Solar Panels Division, ISRO Satellite Centre, Bangalore 560017 (India)

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions: geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15kW power for 15 years mission life in GEO and 5kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also show that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future.

  7. Beyond the crystalline silicon solar cell mass-production——high energy-conversion-efficiency N-type back-junction front-contact and back-junction back-contact mono-crystalline silicon solar cells%前瞻晶体硅太阳能电池未来产业化——高效N型背结前接触和背结背接触晶体硅太阳能电池

    Institute of Scientific and Technical Information of China (English)

    陈晨; 张巍; 贾锐; 张代生; 邢钊; 金智; 刘新宇

    2013-01-01

    文章综述了N型背结背接触和背结前接触晶体硅太阳能电池的研究和产业化的最新进展.从原理上阐述了N型背结背接触电池高效率的原因.从研究的角度,综述和点评了国际上几个研究小组在N型背结前接触晶体硅电池方面的研究工作.论述了丝网印刷Al烧结法制备N型背结背接触电池方面的研究进展.

  8. Recycling WEEE: Extraction and concentration of silver from waste crystalline silicon photovoltaic modules.

    Science.gov (United States)

    Dias, Pablo; Javimczik, Selene; Benevit, Mariana; Veit, Hugo; Bernardes, Andréa Moura

    2016-11-01

    Photovoltaic modules (or panels) are important power generators with limited lifespans. The modules contain known pollutants and valuable materials such as silicon, silver, copper, aluminum and glass. Thus, recycling such waste is of great importance. To date, there have been few published studies on recycling silver from silicon photovoltaic panels, even though silicon technology represents the majority of the photovoltaic market. In this study, the extraction of silver from waste modules is justified and evaluated. It is shown that the silver content in crystalline silicon photovoltaic modules reaches 600g/t. Moreover, two methods to concentrate silver from waste modules were studied, and the use of pyrolysis was evaluated. In the first method, the modules were milled, sieved and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 94%. In the second method, photovoltaic modules were milled, sieved, subjected to pyrolysis at 500°C and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 92%. The first method is preferred as it consumes less energy and presents a higher yield of silver. This study shows that the use of pyrolysis does not assist in the extraction of silver, as the yield was similar for both methods with and without pyrolysis.

  9. A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China

    Science.gov (United States)

    Yao, Yuan; Chang, Yuan; Masanet, Eric

    2014-11-01

    China is the world’s largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate ‘cradle to gate’ primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China’s poly-silicon manufacturing processes, the country’s dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential ‘cradle to gate’ impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

  10. Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2015-06-01

    Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

  11. Thermal conductivity reduction of crystalline silicon by high-pressure torsion.

    Science.gov (United States)

    Harish, Sivasankaran; Tabara, Mitsuru; Ikoma, Yoshifumi; Horita, Zenji; Takata, Yasuyuki; Cahill, David G; Kohno, Masamichi

    2014-01-01

    We report a dramatic and irreversible reduction in the lattice thermal conductivity of bulk crystalline silicon when subjected to intense plastic strain under a pressure of 24 GPa using high-pressure torsion (HPT). Thermal conductivity of the HPT-processed samples were measured using picosecond time domain thermoreflectance. Thermal conductivity measurements show that the HPT-processed samples have a lattice thermal conductivity reduction by a factor of approximately 20 (from intrinsic single crystalline value of 142 Wm(-1) K(-1) to approximately 7.6 Wm(-1) K(-1)). Thermal conductivity reduction in HPT-processed silicon is attributed to the formation of nanograin boundaries and metastable Si-III/XII phases which act as phonon scattering sites, and because of a large density of lattice defects introduced by HPT processing. Annealing the samples at 873 K increases the thermal conductivity due to the reduction in the density of secondary phases and lattice defects.

  12. Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

    Science.gov (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2017-05-01

    We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. This method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change pathway have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields such as optics, nanoelectronics, and mechatronics.

  13. Mitigating mechanical failure of crystalline silicon electrodes for lithium batteries by morphological design.

    Science.gov (United States)

    An, Yonghao; Wood, Brandon C; Ye, Jianchao; Chiang, Yet-Ming; Wang, Y Morris; Tang, Ming; Jiang, Hanqing

    2015-07-21

    Although crystalline silicon (c-Si) anodes promise very high energy densities in Li-ion batteries, their practical use is complicated by amorphization, large volume expansion and severe plastic deformation upon lithium insertion. Recent experiments have revealed the existence of a sharp interface between crystalline Si (c-Si) and the amorphous LixSi alloy during lithiation, which propagates with a velocity that is orientation dependent; the resulting anisotropic swelling generates substantial strain concentrations that initiate cracks even in nanostructured Si. Here we describe a novel strategy to mitigate lithiation-induced fracture by using pristine c-Si structures with engineered anisometric morphologies that are deliberately designed to counteract the anisotropy in the crystalline/amorphous interface velocity. This produces a much more uniform volume expansion, significantly reducing strain concentration. Based on a new, validated methodology that improves previous models of anisotropic swelling of c-Si, we propose optimal morphological designs for c-Si pillars and particles. The advantages of the new morphologies are clearly demonstrated by mesoscale simulations and verified by experiments on engineered c-Si micropillars. The results of this study illustrate that morphological design is effective in improving the fracture resistance of micron-sized Si electrodes, which will facilitate their practical application in next-generation Li-ion batteries. The model and design approach present in this paper also have general implications for the study and mitigation of mechanical failure of electrode materials that undergo large anisotropic volume change upon ion insertion and extraction.

  14. Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, Rudolf; Bauer, Gottfried Heinrich [Institute of Physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg (Germany); Nedev, Nicola [Istituto de Ingenieria, Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California (Mexico); Manolov, Emmo; Nesheva, Diana; Levi, Zelma [Insitute of Solid State Physics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2008-07-01

    Amorphous and crystalline silicon nanoparticles (Si-NPs) embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 700 C or 1000 C in N{sub 2} atmosphere for 30 or 60 minutes. High frequency C-V measurements show that the samples can be charged negatively or positively by applying a positive or negative bias voltage to the gate. A memory effect, due to the Si-NPs in the SiO{sub 2} matrix, is observed. The method of measurement with open circuit between two measurements leads to the retention characteristic where the structures retain about 50% of negative charge trapped in Si-NPs for 24 hours. A second method, where the flat-band voltage is applied as bias voltage, shows shorter retention characteristics. There the Si-NPs retain 50% of their charge after 10 hours.

  15. Experimental measurements of a prototype high concentration Fresnel lens CPV module for the harvesting of diffuse solar radiation.

    Science.gov (United States)

    Yamada, Noboru; Okamoto, Kazuya

    2014-01-13

    A prototype concentrator photovoltaic (CPV) module with high solar concentration, an added low-cost solar cell, and an adjoining multi-junction solar cell is fabricated and experimentally demonstrated. In the present CPV module, the low cost solar cell captures diffuse solar radiation penetrating the concentrator lens and the multi-junction cell captures concentrated direct solar radiation. On-sun test results show that the electricity generated by a Fresnel lens-based CPV module with an additional crystalline silicon solar cell is greater than that for a conventional CPV module by a factor of 1.44 when the mean ratio of diffuse normal irradiation to global normal irradiation at the module aperture is 0.4. Several fundamental optical characteristics are presented for the present module.

  16. Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

    Science.gov (United States)

    Park, Seungil; Parida, Bhaskar; Kim, Keunjoo

    2013-05-01

    We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.

  17. Multilayer graphene as a transparent conducting electrode in silicon heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Kamlesh Patel

    2015-07-01

    Full Text Available In this paper, the structure of a graphene/silicon heterojunction solar cell has been studied under simulated conditions. The parameters of the cell’s layers have been optimized by using AFORS-HET software. Instead of reported 2D nature, we considered graphene as 3D in nature. To ensure the formation of Schottky junction, electrical contacts were made along c-axis to collect the minority carriers, which generate upon illumination. By optimizing the various parameters of n-type multilayer graphene, we achieved the best-simulated cell with the power conversion efficiency of 7.62 % at room temperature. Up to 40 layers of n-type graphene, the efficiency found to be constant and enhanced only to 7.623 %. After further optimization of the parameters of p-crystalline silicon wafer, a maximum efficiency of 11.23 % has been achieved. Temperature dependence on the cell performance has also been studied and an efficiency of 11.38 % has been achieved at 270 K. Finally, we have demonstrated that n-type multilayer graphene can act as an excellent transparent conducting electrode.

  18. Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

    Science.gov (United States)

    Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-01-01

    A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

  19. Spin-dependent transport and recombination in solar cells studied by pulsed electrically detected magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Jan

    2009-11-11

    This thesis deals with spin-dependent transport and recombination of charge carriers in solar cells. A systematic study on the influence of localized paramagnetic states which act as trapping and recombination centres for photogenerated charge carriers, is presented for three different types of solar cells. The central technique used in this thesis is electrically detected magnetic resonance (EDMR). The capabilities of pulsed (p) EDMR were extended with regard to the detection sensitivity. These improvements allowed pEDMR measurements on fully processed devices from cryogenic to room temperature. The instrumental upgrades also set the stage for pEDMR measurements at different resonance frequencies. In high-efficiency solar cells based on the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si), recombination via performancelimiting interface states could directly be measured electrically for the first time. The identification of these defects could be achieved by exploiting their orientation with regard to the surface. In thin-film solar cells based on hydrogenated microcrystalline silicon ({mu}-Si:H) the situation is more complex due to the heterogeneous and disordered structure of the material itself. In addition, these cells are multilayer-systems comprising three different silicon layers with different doping levels and microstructures. By combining a systematic alteration of the sample structure with the information extracted from deconvoluting spectrally overlapping signals in the time domain, it was possible to assign the spin-dependent signals to defects in the individual layers of the solar cells. Benefiting from the instrumental improvements, recombination via dangling bond states in silicon-based solar cells could be investigated by pEDMR at room temperature for the first time. In organic bulk heterojunction solar cells based on MEH-PPV and PCBM two different spin-dependent mechanisms coexist. Both processes

  20. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  1. Solar cell materials developing technologies

    CERN Document Server

    Conibeer, Gavin J

    2014-01-01

    This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

  2. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.

    2011-09-27

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  3. Microanalysis of Solar Cells

    Science.gov (United States)

    Kazmerski, Lawrence L.

    1980-11-01

    Applications of complementary surface analysis techniques (AES, SIMS, XPS) to solar cell device problems are discussed. Several examples of device interface and grain boundary problems are presented. Silicon, gallium arsenide and indium phosphide based devices are reviewed. Results of compositional and chemical analysis are correlated directly with EBIC measurements performed in-situ on identical sample areas. Those are, in turn, correlated with resulting photovoltaic device performance. The importance of microanalysis to the solution of critical device problems in the photovoltaics technology is emphasized.

  4. Bifacial tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wojtczuk, Steven J.; Chiu, Philip T.; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

    2016-06-14

    A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

  5. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  6. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  7. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...... using maskless RIE in a O2 and SF6 plasma, and the surface topology was optimized for solar cell applications by varying gas flows, pressure, power and process time. The starting substrates were 156x156 mm p-type, CZ mono-, multi- and quasi-mono crystalline Si wafers, respectively, with a thickness...

  8. Space Solar Cell Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Measures, characterizes, and analyzes photovoltaic materials and devices. The primary focus is the measurement and characterization of solar cell response...

  9. Dye Sensitized Solar Cell, DSSC

    Directory of Open Access Journals (Sweden)

    Pongsatorn Amornpitoksuk

    2003-07-01

    Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

  10. Artificial neural systems using memristive synapses and nano-crystalline silicon thin-film transistors

    Science.gov (United States)

    Cantley, Kurtis D.

    Future computer systems will not rely solely on digital processing of inputs from well-defined data sets. They will also be required to perform various computational tasks using large sets of ill-defined information from the complex environment around them. The most efficient processor of this type of information known today is the human brain. Using a large number of primitive elements (˜1010 neurons in the neocortex) with high parallel connectivity (each neuron has ˜104 synapses), brains have the remarkable ability to recognize and classify patterns, predict outcomes, and learn from and adapt to incredibly diverse sets of problems. A reasonable goal in the push to increase processing power of electronic systems would thus be to implement artificial neural networks in hardware that are compatible with today's digital processors. This work focuses on the feasibility of utilizing non-crystalline silicon devices in neuromorphic electronics. Hydrogenated amorphous silicon (a-Si:H) nanowire transistors with Schottky barrier source/drain junctions, as well as a-Si:H/Ag resistive switches are fabricated and characterized. In the transistors, it is found that the on-current scales linearly with the effective width W eff of the channel nanowire array down to at least 20 nm. The solid-state electrolyte resistive switches (memristors) are shown to exhibit the proper current-voltage hysteresis. SPICE models of similar devices are subsequently developed to investigate their performance in neural circuits. The resulting SPICE simulations demonstrate spiking properties and synaptic learning rules that are incredibly similar to those in biology. Specifically, the neuron circuits can be designed to mimic the firing characteristics of real neurons, and Hebbian learning rules are investigated. Finally, some applications are presented, including associative learning analogous to the classical conditioning experiments originally performed by Pavlov, and frequency and pattern

  11. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  12. Defect annealing processes for polycrystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steffens, S., E-mail: simon.steffens@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Berlin (Germany); Becker, C. [Helmholtz-Zentrum Berlin, Berlin (Germany); Zollondz, J.-H., E-mail: hzollondz@masdarpv.com [CSG Solar AG, Thalheim (Germany); Chowdhury, A.; Slaoui, A. [L’Institut d’Électronique du Solide et des Systèmes, Strasbourg (France); Lindekugel, S. [Fraunhofer-Institut für Solare Energiesysteme, Freiburg (Germany); Schubert, U.; Evans, R. [Suntech R and D Australia Pty Ltd, Sydney (Australia); Rech, B. [Helmholtz-Zentrum Berlin, Berlin (Germany)

    2013-05-15

    Highlights: ► Defect annealing processes were applied to polycrystalline silicon thin films. ► Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ► The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ► Increase in Sun's-V{sub OC} values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ► Solar cells were fabricated for I–V-measurements: Best solar cell efficiency of 6.7%. -- Abstract: A variety of defect healing methods was analyzed for optimization of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The films were fabricated by solid phase crystallization of amorphous silicon deposited either by plasma enhanced chemical vapor deposition (PECVD) or by electron-beam evaporation (EBE). Three different rapid thermal processing (RTP) set-ups were compared: A conventional rapid thermal annealing oven, a dual wavelength laser annealing system and a movable two sided halogen lamp oven. The two latter processes utilize focused energy input for reducing the thermal load introduced into the glass substrates and thus lead to less deformation and impurity diffusion. Analysis of the structural and electrical properties of the poly-Si thin films was performed by Suns-V{sub OC} measurements and Raman spectroscopy. 1 cm{sup 2} cells were prepared for a selection of samples and characterized by I–V-measurements. The poly-Si material quality could be extremely enhanced, resulting in increase of the open circuit voltages from about 100 mV (EBE) and 170 mV (PECVD) in the untreated case up to 480 mV after processing.

  13. Effects of Light and Electron Beam Irradiation on Halide Perovskites and Their Solar Cells.

    Science.gov (United States)

    Klein-Kedem, Nir; Cahen, David; Hodes, Gary

    2016-02-16

    Hybrid alkylammonium lead halide perovskite solar cells have, in a very few years of research, exceeded a light-to-electricity conversion efficiency of 20%, not far behind crystalline silicon cells. These perovskites do not contain any rare element, the amount of toxic lead used is very small, and the cells can be made with a low energy input. They therefore already conform to two of the three requirements for viable, commercial solar cells-efficient and cheap. The potential deal-breaker is their long-term stability. While reasonable short-term (hours) and even medium term (months) stability has been demonstrated, there is concern whether they will be stable for the two decades or more expected from commercial cells in view of the intrinsically unstable nature of these materials. In particular, they have a tendency to be sensitive to various types of irradiation, including sunlight, under certain conditions. This Account focuses on the effect of irradiation on the hybrid (and to a small degree, all-inorganic) lead halide perovskites and their solar cells. It is split up into two main sections. First, we look at the effect of electron beams on the materials. This is important, since such beams are used for characterization of both the perovskites themselves and cells made from them (electron microscopy for morphological and compositional characterization; electron beam-induced current to study cell operation mechanism; cathodoluminescence for charge carrier recombination studies). Since the perovskites are sensitive to electron beam irradiation, it is important to minimize beam damage to draw valid conclusions from such measurements. The second section treats the effect of visible and solar UV irradiation on the perovskites and their cells. As we show, there are many such effects. However, those affecting the perovskite directly need not necessarily always be detrimental to the cells, while those affecting the solar cells, which are composed of several other phases

  14. Structural, electronic and transport properties of armorphous/crystalline silicon heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, Tim Ferdinand

    2011-06-15

    The present dissertation is concerned with the physical aspects of the a-Si:H/c-Si heterojunction in the context of PV research. In a first step, the technological development which took place in the framework of the thesis is summarized. Its main constituent was the development and implementation of ultrathin ({<=}10 nm) undoped a-Si:H[(i)a-Si:H] layers to improve the passivation of the c-Si surface with the goal of increasing the open-circuit voltage of the solar cell. It is shown that the effect of (i)a-Si:H interlayers depends on the c-Si substrate doping type, and that challenges exist particularly on the technologically more relevant (n)c-Si substrate. A precise optimization of (i)a-Si:H thickness and the doping level of the following a-Si:H top layers is required to realize an efficiency gain in the solar cell. In this chapter, the key scientific questions to be tackled in the main part of the thesis are brought up by the technological development. In the next chapter, the charge carrier transport through a-Si:H/c-Si heterojunctions is investigated making use of current-voltage (I/V) characteristics taken at different temperatures. The dominant transport mechanisms in a-Si:H/c-Si heterojunctions are identified, and the relevance for solar cell operation is discussed. It is found that in the bias regime relevant for solar cell operation, the theoretical framework for the description of carrier transport in classical c-Si solar cells applies as well, which enables to use I/V curves for a simple characterization of a-Si:H/c-Si structures. The next chapter deals with the microscopic characterization of ultrathin a-Si:H layers. Employing infrared spectroscopy, spectroscopic ellipsometry, photoelectron spectroscopy and secondary ion mass spectroscopy, the structural, electronic and optical properties of (i)a-Si:H are analyzed. It is found that ultrathin a-Si:H essentially behaves like layers of 10..100 times the thickness. This represents the basis for the

  15. Carbon Nanotube Solar Cells

    Science.gov (United States)

    Klinger, Colin; Patel, Yogeshwari; Postma, Henk W. Ch.

    2012-01-01

    We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement. PMID:22655070

  16. Carbon nanotube solar cells.

    Directory of Open Access Journals (Sweden)

    Colin Klinger

    Full Text Available We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement.

  17. 40 years of solar cell research in the CINVESTAV of the IPN; 40 anos de investigacion de celdas solares en el CINVESTAV del IPN

    Energy Technology Data Exchange (ETDEWEB)

    Morales Acevedo, Arturo [Centro de Investigaciones y Estudios Avanzados del Instituto Politecnico Nacional, Mexico (Mexico)

    2007-06-15

    Basically, this presentation describes what the Centro de Investigaciones y de Estudios Avanzados (CINVESTAV) has been working on during this last 40 years, e.g. solar cells. Firstly, it is explained the starting point of the research of solar cells in this institute. Next, it is briefly described the project focused on the factory, which produced 3-inch solar cells, and there are also explained the methodologies that were used in order to produce such sort of cells. In addition, the issues related to photovoltaic systems are explained, among there are found: the characteristics and the first places where they were installed, among others. Next, it is described the program of the PV system installation in the facilities of some child hostel of the Republic of Mexico, carried out with the collaboration of the National Indigenist Institute (INI). Next, it is presented the technology that the CINVESTAV is currently working on, i.e. crystalline silicon solar cells. Besides, it is shown by graphic and illustrative means the process of the same. Finally, it is described the strategic plan suggested in order to produce solar cells in Mexico; besides, there are shown the got conclusions a long with the future expectations. [Spanish] En esta presentacion se describe basicamente todo lo que ha pasado a lo largo de 40 anos en el Centro de Investigaciones y de Estudios Avanzados (CINVESTAV), en relacion a las celdas solares. En primer plano, se describe el punto de inicio de la investigacion de celdas solares en esta institucion. Enseguida, se describe brevemente el proyecto que se realizo sobre la planta piloto fabricante de celdas solares de 3 pulgadas de diametro, tambien se explican las metodologias que se seguian para fabricar dichas celdas. Mas adelante, se explican cuestiones relacionadas con los modulos fotovoltaicos entre las que se encuentran: las caracteristicas y los primeros lugares donde fueron instalados este tipo de sistemas. Enseguida, se describe el programa

  18. Colloidal quantum dot solar cells

    Science.gov (United States)

    Sargent, Edward H.

    2012-03-01

    Solar cells based on solution-processed semiconductor nanoparticles -- colloidal quantum dots -- have seen rapid advances in recent years. By offering full-spectrum solar harvesting, these cells are poised to address the urgent need for low-cost, high-efficiency photovoltaics.

  19. An Introduction to Solar Cells

    Science.gov (United States)

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  20. An Introduction to Solar Cells

    Science.gov (United States)

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  1. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  2. Non-Vacuum Processed Polymer Composite Antireflection Coating Films for Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdullah Uzum

    2016-08-01

    Full Text Available A non-vacuum processing method for preparing polymer-based ZrO2/TiO2 multilayer structure antireflection coating (ARC films for crystalline silicon solar cells by spin coating is introduced. Initially, ZrO2, TiO2 and surface deactivated-TiO2 (SD-TiO2 based films were examined separately and the effect of photocatalytic properties of TiO2 film on the reflectivity on silicon surface was investigated. Degradation of the reflectance performance with increasing reflectivity of up to 2% in the ultraviolet region was confirmed. No significant change of the reflectance was observed when utilizing SD-TiO2 and ZrO2 films. Average reflectance (between 300 nm–1100 nm of the silicon surface coated with optimized polymer-based ZrO2 single or ZrO2/SD-TiO2 multilayer composite films was decreased down to 6.5% and 5.5%, respectively. Improvement of photocurrent density (Jsc and conversion efficiency (η of fabricated silicon solar cells owing to the ZrO2/SD-TiO2 multilayer ARC could be confirmed. The photovoltaic properties of Jsc, the open-circuit photo voltage (VOC, the fill factor (FF, and the η were 31.42 mA cm−2, 575 mV, 71.5% and 12.91%. Efficiency of the solar cells was improved by the ZrO2-polymer/SD-TiO2 polymer ARC composite layer by a factor of 0.8% with an increase of Jsc (2.07 mA cm−2 compared to those of fabricated without the ARC.

  3. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Luis G. Gerling

    2015-10-01

    Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

  4. High Performance Perovskite Solar Cells.

    Science.gov (United States)

    Tong, Xin; Lin, Feng; Wu, Jiang; Wang, Zhiming M

    2016-05-01

    Perovskite solar cells fabricated from organometal halide light harvesters have captured significant attention due to their tremendously low device costs as well as unprecedented rapid progress on power conversion efficiency (PCE). A certified PCE of 20.1% was achieved in late 2014 following the first study of long-term stable all-solid-state perovskite solar cell with a PCE of 9.7% in 2012, showing their promising potential towards future cost-effective and high performance solar cells. Here, notable achievements of primary device configuration involving perovskite layer, hole-transporting materials (HTMs) and electron-transporting materials (ETMs) are reviewed. Numerous strategies for enhancing photovoltaic parameters of perovskite solar cells, including morphology and crystallization control of perovskite layer, HTMs design and ETMs modifications are discussed in detail. In addition, perovskite solar cells outside of HTMs and ETMs are mentioned as well, providing guidelines for further simplification of device processing and hence cost reduction.

  5. Investigating the Effect of Pyridine Vapor Treatment on Perovskite Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Alison [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-20

    Perovskite photovoltaics have recently come to prominence as a viable alternative to crystalline silicon based solar cells. In an effort to create consistent and high-quality films, we studied the effect of various annealing conditions as well as the effect of pyridine vapor treatment on mixed halide methylammonium lead perovskite films. Of six conditions tested, we found that annealing at 100°C for 90 minutes followed by 120°C for 15 minutes resulted in the purest perovskite. Perovskite films made using that condition were treated with pyridine for various amounts of time, and the effects on perovskite microstructure were studied using x-ray diffraction, UV-Vis spectroscopy, and time-resolved photoluminescence lifetime analysis (TRPL). A previous study found that pyridine vapor caused perovskite films to have higher photoluminescence intensity and become more homogenous. In this study we found that the effects of pyridine are more complex: while films appeared to become more homogenous, a decrease in bulk photoluminescence lifetime was observed. In addition, the perovskite bandgap appeared to decrease with increased pyridine treatment time. Finally, X-ray diffraction showed that pyridine vapor treatment increased the perovskite (110) peak intensity but also often gave rise to new unidentified peaks, suggesting the formation of a foreign species. It was observed that the intensity of this unknown species had an inverse correlation with the increase in perovskite peak intensity, and also seemed to be correlated with the decrease in TRPL lifetime.

  6. Characterization of laser-induced damage in silicon solar cells during selective ablation processes

    Energy Technology Data Exchange (ETDEWEB)

    Poulain, G. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Agence de l’environnement et de la Maîtrise de l’Energie, 20, avenue du Grésillé, BP 90406 49004 Angers Cedex 01 (France); Blanc, D., E-mail: daniele.blanc@insa-lyon.fr [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Focsa, A.; De Vita, M.; Fraser, K. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France); Sayad, Y. [Institut de Sciences et Technologies, Centre Universitaire de Souk Ahras, Route de Annaba, Souk Ahras (Algeria); Lemiti, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Bâtiment Blaise pascal, Villeurbanne, F-69621 (France)

    2013-05-15

    Selective laser ablation of silicon nitride layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed with a nanosecond UV laser at various energy densities ranging from 0.2 to 1.5 J cm{sup −2}. Optical microscopy was used as a simple mean to assess the ablation threshold that was correlated to the temperature at the interface between the silicon nitride coating and the silicon substrate. Minority carrier lifetime measurements were performed using a microwave photo-conductance decay technique. Band to band photoluminescence spectroscopy proved to be a sensitive technique to qualify the laser-induced damage to the silicon substrate. The crystalline structure of silicon seemed to be maintained after silicon nitride ablation as shown by UV reflectivity measurements. Laser parameters corresponding to fluences of around 0.4 J cm{sup −2} were found to achieve selective ablation of SiN{sub x} without causing detrimental damage to the surrounding material.

  7. Amorphous SiC layers for electrically conductive Rugate filters in silicon based solar cells

    Science.gov (United States)

    Janz, S.; Peters, M.; Künle, M.; Gradmann, R.; Suwito, D.

    2010-05-01

    The subject of this work is the development of an electrically conductive Rugate filter for photovoltaic applications. We think that the optical as well as the electrical performance of the filter can be adapted especially to the requirements of crystalline Si thin-film and amorphous/crystalline silicon tandem solar cells. We hav