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Sample records for crystalline wet etching

  1. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  2. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  3. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h‑1) is in reasonable agreement with that detected in the experiments (24 µm · h‑1).

  4. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...... using maskless RIE in a O2 and SF6 plasma, and the surface topology was optimized for solar cell applications by varying gas flows, pressure, power and process time. The starting substrates were 156x156 mm p-type, CZ mono-, multi- and quasi-mono crystalline Si wafers, respectively, with a thickness...

  5. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... for their 16.8% efficient black Si cell using a metal-assisted, chemical etching method on FZ mono-crystalline Si substrates. Yoo et al. [4] use RIE similar to this work on large-area, multi-crystalline Si cells and achieve a 16.1% efficiency despite a relatively high reflectance of 13.3%. Despite several...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...

  6. XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide

    Science.gov (United States)

    Deng, Changmeng; Geng, Yongyou; Wu, Yiqun

    Phase change lithography has pretty potential applications for high density optical data storage mastering and micro/nano structure patterning because it is not restricted by optical diffraction limitation and at relatively low cost. GeSbTe, as an initially investigated material for phase change lithography, its mechanism of selective etching in inorganic or organic alkaline aqueous solutions, such as NaOH and tetramethylammonium hydroxide (TMAH), is still unknown. In this paper, XPS measurement is used to study the selective wet etching mechanism of GeSbTe phase change thin films with TMAH solution, and the results show that oxidization played an important role in the etching process. Ge, Sb and Te are oxidized into GeO2, Sb2O5 and TeO2, respectively, and then as the corresponding salts dissolved into the etchant solution. Ge-X (X is Ge, Sb or Te) bonds are first broken in the etching, then Sb-X bonds, and finally Te-Te bonds. To confirm the effect of oxidization in the etching, H2O2 as an oxidant is added into the TMAH solution, and the etching rates are increased greatly for both amorphous and crystalline states. The selective etching mechanism of Ge2Sb2Te5 phase change films is discussed by the difference of bonds breakage between the amorphous and crystalline states.

  7. Development of Wet-Etching Tools for Precision Optical Figuring

    Energy Technology Data Exchange (ETDEWEB)

    Rushford, M C; Dixit, S N; Hyde, R; Britten, J A; Nissen, J; Aasen, M; Toeppen, J; Hoaglan, C; Nelson, C; Summers, L; Thomas, I

    2004-01-27

    This FY03 final report on Wet Etch Figuring involves a 2D thermal tool. Its purpose is to flatten (0.3 to 1 mm thickness) sheets of glass faster thus cheaper than conventional sub aperture tools. An array of resistors on a circuit board was used to heat acid over the glass Optical Path Difference (OPD) thick spots and at times this heating extended over the most of the glass aperture. Where the acid is heated on the glass it dissolves faster. A self-referencing interferometer measured the glass thickness, its design taking advantage of the parallel nature and thinness of these glass sheets. This measurement is used in close loop control of the heating patterns of the circuit board thus glass and acid. Only the glass and acid were to be moved to make the tool logistically simple to use in mass production. A set of 4-circuit board, covering 80 x 80-cm aperture was ordered, but only one 40 x 40-cm board was put together and tested for this report. The interferometer measurement of glass OPD was slower than needed on some glass profiles. Sometimes the interference fringes were too fine to resolve which would alias the sign of the glass thickness profile. This also caused the phase unwrapping code (FLYNN) to struggle thus run slowly at times taking hours, for a 10 inch square area. We did extensive work to improve the speed of this code. We tried many different phase unwrapping codes. Eventually running (FLYNN) on a farm of networked computers. Most of the work reported here is therefore limited to a 10-inch square aperture. Researched into fabricating a better interferometer lens from Plexiglas so to have less of the scattered light issues of Fresnel lens groves near field scattering patterns, this set the Nyquest limit. There was also a problem with the initial concept of wetting the 1737 glass on its bottom side with acid. The wetted 1737 glass developed an Achromatic AR coating, spoiling the reflection needed to see glass thickness interference fringes. In response

  8. Nanoporous Gallium Nitride Through Anisotropic Metal-Assisted Electroless Photochemical Wet Etching Technique

    Science.gov (United States)

    Perumal, R.; Hassan, Z.

    2016-12-01

    Nanoporous gallium nitride (GaN) has many potential applications in light-emitting diodes (LEDs), photovoltaics, templates and chemical sensors. This article reports the porosification of GaN through UV enhanced metal-assisted electroless photochemical wet etching technique using three different acid-based etchants and platinum served as catalyst for porosification. The etching process was conducted at room temperature for a duration of 90min. The morphological, structural, spectral and optical features of the developed porous GaN were studied with appropriate characterization techniques and the obtained results were presented. Field emission scanning electron micrographs exhibited the porosity nature along with excellent porous network of the etched samples. Structural studies confirmed the mono crystalline quality of the porous nanostructures. Raman spectral analyzes inferred the presenting phonon modes such as E2 (TO) and A1 (LO) in fabricated nanoporous structures. The resulted porous nanostructures hold the substantially enhanced photoluminescence intensity compared with the pristine GaN epitaxial film that is interesting and desirable for several advances in the applications of Nano-optoelectronic devices.

  9. Time-varying wetting behavior on copper wafer treated by wet-etching

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Sheng-Hung; Wu, Chuan-Chang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Wu, Hsing-Chen [Advanced Technology Materials Inc, Hsinchu 310, Taiwan, ROC (China); Cheng, Shao-Liang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Sheng, Yu-Jane, E-mail: yjsheng@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Tsao, Heng-Kwong, E-mail: hktsao@cc.ncu.edu.tw [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China)

    2015-06-30

    Graphical abstract: - Highlights: • A thin oxide layer always remains on surfaces of Cu wafers after aqueous etching. • A pure Cu wafer is obtained by the HAc treatment and the water CA is about 45°. • The oxide layer and CA grow with time after the Cu wafer is exposed to air. • Surface roughness and hydrophobicity of pure Cu wafers grow rapidly in vacuum. - Abstract: The wet cleaning process in semiconductor fabrication often involves the immersion of the copper wafer into etching solutions and thereby its surface properties are significantly altered. The wetting behavior of a copper film deposited on silicon wafer is investigated after a short dip in various etching solutions. The etchants include glacial acetic acid and dilute solutions of nitric acid, hydrofluoric acid, and tetramethylammonium hydroxide. It was found that in most cases a thin oxide layer still remains on the surface of as-received Cu wafers when they are subject to etching treatments. However, a pure Cu wafer can be obtained by the glacial acetic acid treatment and its water contact angle (CA) is about 45°. As the pure Cu wafer is placed in the ambient condition, the oxide thickness grows rapidly to the range of 10–20 Å within 3 h and the CA on the hydrophilic surface also rises. In the vacuum, it is surprising to find that the CA and surface roughness of the pure Cu wafer can grow significantly. These interesting results may be attributed to the rearrangement of surface Cu atoms to reduce the surface free energy.

  10. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  11. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    Science.gov (United States)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  12. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Cai Jinbao; Wang Jinyan; Liu Yang; Xu Zhe; Wang Maojun; Yu Min; Xie Bing

    2013-01-01

    A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation followed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700 ℃ could be etched off in a homothermal (70 ℃) KOH solution while the KOH solution had no etching effects on the region of the A1GaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900 ℃ followed by 30 min treatment in 70 ℃ KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.

  13. Effect of wet etching process on the morphology and transmittance of fluorine doped tin oxide (FTO)

    Science.gov (United States)

    Triana, S. L.; Kusumandari; Suryana, R.

    2016-11-01

    Wet etching process was performed on the surface of FTO. The FTO coated glasses subtrates with size of 2×2 cm covered by screen were patterned using zinc powder and concentrated hydrochloric acid (1 M). The substrates were then cleaned in ultrasonic baths of special detergent(helmanex) diluted in deionized water and isopropanol in sequence. The screens with various of hole size denotes by T32, T49 and T55 were used in order to create a pattern of surface textured. The atomic force microscopy (AFM) image revealed that wet etching process changes the morphology of FTO. It indicates that texturization occured. Moreover, from the UV-Vis Spectrophotometer measurement, the transmittance of FTO increase after wet etching process. The time of etching and pattern of screen were affect to the morphology and the transmittance of FTO.

  14. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    Science.gov (United States)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  15. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  16. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  17. Post-synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals

    Science.gov (United States)

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2016-01-01

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, via acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, among these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. PMID:26458081

  18. Etch selectivity of a wet chemical formulation for premetal cleaning

    Science.gov (United States)

    Epton, Jeremy W.; Jarrett, Deborah L.; Doohan, Ian J.

    2001-04-01

    This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.

  19. Oxygen plasma etching-induced crystalline lattice transformation of colloidal photonic crystals.

    Science.gov (United States)

    Ding, Tao; Wang, Fei; Song, Kai; Yang, Guoqiang; Tung, Chen-Ho

    2010-12-15

    This communication describes the transformation of a colloidal crystalline lattice that was realized via oxygen plasma etching of colloidal crystals made of SiO2@PMMA core-shell microspheres. The plasma etching of the colloidal crystals proceeded nonuniformly from the top to the bottom of the colloidal crystals. The PMMA shell was etched away by the oxygen plasma in a layer-by-layer manner, and the silica core was drawn into the pit formed by the neighboring spheres in the layer below. Consequently, the crystalline lattice was transformed while the order was maintained. Scanning electron microscopy images and reflection spectra further confirmed the change in the crystalline structures. Colloidal crystals with sc and bcc lattices can be fabricated if the ratio of the polymer shell thickness to the silica core diameter is equal to certain values. More importantly, this approach may be applicable to the fabrication of various assembly structures with different inorganic particles.

  20. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    Science.gov (United States)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  1. Novel 3D microelectrodes and pipettes by wet and dry etching

    DEFF Research Database (Denmark)

    Dimaki, Maria; Vazquez, Patricia; Aimone, Alessandro;

    2012-01-01

    The purpose of this work is to develop novel 3D micro- and nanoelectrodes and pipettes by use of carefully optimised standard microfabrication techniques such as wet (by KOH) and dry silicon etching. Two types of electrodes have been fabricated and characterized: small nanoelectrodes to be used...

  2. Single crystal Fe elements patterned by one-step selective chemical wet etching

    NARCIS (Netherlands)

    Sun, Li; Wong, P.K.J.; Niu, Daxin; Zou, Xiao; Zhai, Ya; Wu, Jing; Xu, Yongbing; Zhai, Hongru

    2010-01-01

    A technique has been developed to pattern single crystal ultrathin Fe films by selective chemical wet etching of the Au capping layer and then simultaneous oxidization of the ferromagnetic Fe layer underneath. The focused magneto-optical Kerr effect and ferromagnetic resonance measurements demonstra

  3. Wet-Etch Figuring Optical Figuring by Controlled Application of Liquid Etchant

    Energy Technology Data Exchange (ETDEWEB)

    Britten, J

    2001-02-13

    WET-ETCH FIGURING (WEF) is an automated method of precisely figuring optical materials by the controlled application of aqueous etchant solution. This technology uses surface-tension-gradient-driven flow to confine and stabilize a wetted zone of an etchant solution or other aqueous processing fluid on the surface of an object. This wetted zone can be translated on the surface in a computer-controlled fashion for precise spatial control of the surface reactions occurring (e.g. chemical etching). WEF is particularly suitable for figuring very thin optical materials because it applies no thermal or mechanical stress to the material. Also, because the process is stress-free the workpiece can be monitored during figuring using interferometric metrology, and the measurements obtained can be used to control the figuring process in real-time--something that cannot be done with traditional figuring methods.

  4. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell.

    Science.gov (United States)

    Song, Kyuwan; Kim, Bonggi; Lee, Hoongjoo; Lee, Youn-Jung; Park, Cheolmin; Balaji, Nagarajan; Ju, Minkyu; Choi, Jaewoo; Yi, Junsin

    2012-07-23

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm-3 in the low sheet resistance (Rs) region and 7 × 1019 cm-3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm-2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm-2, Voc of 625.7 mV, and efficiency of 17.60%.

  5. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  6. Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

    Science.gov (United States)

    Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

    2016-11-01

    We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  7. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  8. Fabricating nanostructures through a combination of nano-oxidation and wet etching on silicon wafers with different surface conditions.

    Science.gov (United States)

    Huang, Jen-Ching

    2012-01-01

    This study investigates the surface conditions of silicon wafers with native oxide layers (NOL) or hydrogen passivated layers (HPL) and how they influence the processes of nano-oxidation and wet etching. We also explore the combination of nano-oxidation and wet etching processes to produce nanostructures. Experimental results reveal that the surface conditions of silicon wafers have a considerable impact on the results of nano-oxidation when combined with wet etching. The height and width of oxides on NOL samples exceeded the dimensions of oxides on HPL samples, and this difference became increasingly evident with an increase in applied bias voltage. The height of oxidized nanolines on the HPL sample increased after wet etching; however, the width of the lines increased only marginally. After wet etching, the height and width of oxides on the NOL were more than two times greater than those on the HPL. Increasing the applied bias voltage during nano-oxidation on NOL samples increased both the height and width of the oxides. After wet etching however, the increase in bias voltage appeared to have little effect on the height of oxidized nanolines, but the width of oxidized lines increased. This study also discovered that the use of higher applied bias voltages on NOL samples followed by wet etching results in nanostructures with a section profile closely resembling a curved surface. The use of this technique enabled researchers to create molds in the shape of a silicon nanolens array and an elegantly shaped nanoscale complex structures mold.

  9. Experimental Study on Wax Protective Coating for Wet Deep Silicon Etching Processes

    Institute of Scientific and Technical Information of China (English)

    JIANG Jian-liang; ULRICH Hilleringmann

    2006-01-01

    In order to protect the finished structures on the front side during deep silicon wet etching processes,the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structures from the strong aqueous bases. By way of heating and vacuumization, the air bubbles are expelled from the coating to extend the protection duration. The air pressure in the sealed chamber is 0. 026 7 Pa, and the temperature of the heated wafer is 300 ℃. Two kinds of the wax are used, and the corresponding photos of the etched wafer and the protection times are given. In 75 ℃ 10 % KOH solution, the protection duration is more than 8 h.

  10. Profile Prediction and Fabrication of Wet-Etched Gold Nanostructures for Localized Surface Plasmon Resonance

    Directory of Open Access Journals (Sweden)

    Zhou Xiaodong

    2009-01-01

    Full Text Available Abstract Dispersed nanosphere lithography can be employed to fabricate gold nanostructures for localized surface plasmon resonance, in which the gold film evaporated on the nanospheres is anisotropically dry etched to obtain gold nanostructures. This paper reports that by wet etching of the gold film, various kinds of gold nanostructures can be fabricated in a cost-effective way. The shape of the nanostructures is predicted by profile simulation, and the localized surface plasmon resonance spectrum is observed to be shifting its extinction peak with the etching time. (See supplementary material 1 Electronic supplementary material The online version of this article (doi:10.1007/s11671-009-9486-4 contains supplementary material, which is available to authorized users. Click here for file

  11. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  12. Fabrication of ordered arrays of InP microstructures by wet chemical etching with Au masks.

    Science.gov (United States)

    Su, G; Guo, Q; Palmer, R E

    2002-12-01

    Ordered arrays of InP microstructures have been fabricated on InP(001) substrates by wet chemical etching in aqueous HCl with patterned Au masks. The masks were produced by Au deposition through copper grids or a monolayer of polystyrene microspheres. Square InP mesas (20 x 20 microns) and pillars (approximately 100 nm in both diameter and height) were both produced and characterized by scanning electron microscopy and atomic force microscopy.

  13. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    Science.gov (United States)

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

  14. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  15. Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Ehrhardt, M. [Leibniz-Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany); Raciukaitis, G.; Gecys, P. [Laboratory for Applied Research, Institute of Physics, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Zimmer, K., E-mail: martin.ehrhardt@iom-leipzig.de [Leibniz-Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany)

    2010-09-15

    The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF{sub 2}, MgF{sub 2}), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t{sub p} = 10 ps) lasers at UV wavelengths ({lambda}{sub 1} = 355 nm and {lambda}{sub 2} = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a {lambda}{sub 1} = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths ({lambda}{sub 1} = 266 nm and {lambda}{sub 2} = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm{sup 2}, respectively.

  16. Study of wet etching thin films of indium tin oxide in oxalic acid by monitoring the resistance

    Energy Technology Data Exchange (ETDEWEB)

    Mammana, Suelene S., E-mail: ssmammana@abinfo.com.br [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil); Greatti, Alessandra; Luiz, Francis H.; Costa, Francisca I. da; Mammana, Alaide P. [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil); Calligaris, Guilherme A.; Cardoso, Lisandro P. [Institute of Physics Gleb Wataghin, State University of Campinas-UNICAMP, CEP 13083-859, Campinas, SP (Brazil); Mammana, Carlos I.Z.; Engelsen, Daniel den [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil)

    2014-09-30

    We describe a study on wet etching of thin films of indium tin oxide (ITO) using a simple method by monitoring the resistance of the thin film in aqueous solutions of oxalic acid and hydrochloric acid. Generally three different regimes can be distinguished during etching ITO in acids: (1) initial etching, which is slow, (2) a fast etching phase and (3) slow etching stage at the end. These regimes are explained in terms of a porosity–roughness model. This porosity model has been confirmed largely by X-ray reflection measurements at grazing incidence, roughness measurements and scanning electron microscopy (SEM). A reliable method for monitoring the resistance during etching has been developed. This method is based on a 2-strips measuring jig with a very low series contact resistance. The activation energy of the etch rate of ITO films was found to be 80 ± 5 kJ/mol for oxalic acid and 56 ± 5 kJ/mol for HCl. SEM analyses in the final stage of the etching process indicate an enrichment of Sn in the residual film material. These observations are explained in terms of preferential etching of In{sub 2}O{sub 3}. X-ray analyses showed that the density of the ITO film decreased by etching. By adding ferric chloride to the oxalic acid solution we could accelerate the etch rate substantially. - Highlights: • Etching of indium tin oxide thin films by monitoring the resistance. • Oxalic acid has 2–3 times lower etch rate than concentrated HCl. • The etch rate in oxalic acid can be accelerated substantially by adding FeCl{sub 3}. • The proposed etching model for indium tin oxide was confirmed by X-ray analysis and scanning electron microscopy. • Energy Dispersive X-ray Spectroscopy analyses showed preferential etching of In{sub 2}O{sub 3}, enriching the film with SnO{sub 2}.

  17. Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

    Energy Technology Data Exchange (ETDEWEB)

    Visconti, P.; Huang, D.; Reshchikov, M.A.; Yun, F.; Cingolani, R.; Smith, D.J.; Jasinski, J.; Swider, W.; Liliental-Weber, Z.; Morkoc, H.

    2002-04-08

    The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H{sub 3}PO{sub 4} and molten KOH to estimate the defect density in GaN films grown by hydride vapor phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Free-standing whiskers and hexagonal etch pits are formed by PEC and wet etching respectively. Using Atomic Force Microscopy (AFM), we found the whisker density to be similar to etch pit densities for samples etched under precise conditions. Additionally Transmission Electron Microscopy (TEM) observations confirmed dislocation densities obtained by etching which increased our confidence in the consistency of methods used. Hot wet etching was used also to investigate the polarity of GaN films together with Convergent Beam Electron Diffraction (CBED) and AFM imaging. We found that hot H{sub 3}PO{sub 4} etches N-polarity GaN films very quickly resulting in the complete removal or drastic change of surface morphology as revealed by AFM or optical microscopy. On the contrary, the acid attacks only defect sites in Ga-polarity films producing nanometer-scale pits but leaving the defect-free GaN intact and the morphology unchanged. Additionally, the polarity assignments were related to the as-grown morphology and to the growth conditions of the buffer layer and the subsequent GaN layer.

  18. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  19. Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

    Science.gov (United States)

    Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-02-01

    This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

  20. Laterally Confined Modes in Wet-Etched,Metal-Coated,Quantum-Dot-Inserted Pillar Microcavities

    Institute of Scientific and Technical Information of China (English)

    ZHANG Hao; ZHENG Hou-Zhi; ZHANG Ji-Dong; XU Ping; TAN Ping-Heng; YANG Fu-Hua; ZENG Yi-Ping

    2004-01-01

    @@ We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic dot with perfectly reflected sidewalls. These microcavities were consisted of the semiconductor pillar fabricated by the simple wet-etched process and successive metal coating. Angle-resolved photoluminescence spectra demonstrate the characteristic emission of the corresponding eigenmodes, as its pattern revealed by varying both polar (θ) and azimuthal (φ) angles. It is shown that the metal-coated sidewalls can provide an efficient way to suppress the emission due to the leaking modes in these pillar microcavities.

  1. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Science.gov (United States)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  2. [INVITED] On the mechanisms of single-pulse laser-induced backside wet etching

    Science.gov (United States)

    Tsvetkov, M. Yu.; Yusupov, V. I.; Minaev, N. V.; Akovantseva, A. A.; Timashev, P. S.; Golant, K. M.; Chichkov, B. N.; Bagratashvili, V. N.

    2017-02-01

    Laser-induced backside wet etching (LIBWE) of a silicate glass surface at interface with a strongly absorbing aqueous dye solution is studied. The process of crater formation and the generated optoacoustic signals under the action of single 5 ns laser pulses at the wavelength of 527 nm are investigated. The single-pulse mode is used to avoid effects of incubation and saturation of the etched depth. Significant differences in the mechanisms of crater formation in the "soft" mode of laser action (at laser fluencies smaller than 150-170 J/cm2) and in the "hard" mode (at higher laser fluencies) are observed. In the "soft" single-pulse mode, LIBWE produces accurate craters with the depth of several hundred nanometers, good shape reproducibility and smooth walls. Estimates of temperature and pressure of the dye solution heated by a single laser pulse indicate that these parameters can significantly exceed the corresponding critical values for water. We consider that chemical etching of glass surface (or molten glass) by supercritical water, produced by laser heating of the aqueous dye solution, is the dominant mechanism responsible for the formation of crater in the "soft" mode. In the "hard" mode, the produced craters have ragged shape and poor pulse-to-pulse reproducibility. Outside the laser exposed area, cracks and splits are formed, which provide evidence for the shock induced glass fracture. By measuring the amplitude and spectrum of the generated optoacoustic signals it is possible to conclude that in the "hard" mode of laser action, intense hydrodynamic processes induced by the formation and cavitation collapse of vapor-gas bubbles at solid-liquid interface are leading to the mechanical fracture of glass. The LIBWE material processing in the "soft" mode, based on chemical etching in supercritical fluids (in particular, supercritical water) is very promising for structuring of optical materials.

  3. Spin-on metal oxide materials with high etch selectivity and wet strippability

    Science.gov (United States)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

    2016-03-01

    Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

  4. Effects of thermo-plasmonics on laser-induced backside wet etching of silicate glass

    Science.gov (United States)

    Tsvetkov, M. Yu; Yusupov, V. I.; Minaev, N. V.; Timashev, P. S.; Golant, K. M.; Bagratashvili, V. N.

    2016-10-01

    The thermo-plasmonic effect (heat deposition via absorption of laser light by metal nanoparticles) is applied to substantially enhance the effectiveness and controllability of the microstructure formation by laser-induced backside wet etching (LIBWE). Experiments were carried out with silicate glass plates using a pulsed 527 nm wavelength laser and an aqueous solution of AgNO3 as a precursor of the Ag nanoparticles. Mechanisms of such thermo-plasmonic LIBWE (TP-LIBWE) versions are considered. They involve: laser-induced photo-thermal reducing of silver (Ag) and self-assembling of Ag nanoparticles in water and the water/glass interface; fast laser-induced overheating of a water and glass surface through the thermo-plasmonic effect; formation of highly reactive supercritical water that causes glass etching and crater formation; generation of steam-gas bubbles in a liquid. It is significant that the emergence of the Marangoni convection results in bubble retention in the focal point at the interface and the accumulation of nanoparticles on the surface of the laser-induced crater, as this facilitates the movement of the bubbles with captured Ag particles from the fluid volume in the crater region, and accelerates the formation of the area of strong ‘surface absorption’ of laser energy. All these mechanisms provide a highly efficient and reproducible process for laser microstructure formation on the surface of glass using a novel TP-LIBWE technique.

  5. Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

    Science.gov (United States)

    Sun, Jingchang; Zhao, Ting; Ma, Zhangwei; Li, Ming; Chang, Cheng; Liang, Hongwei; Bian, Jiming; Li, Chengren

    2015-09-01

    The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.

  6. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu; Lin, Mei-Yu

    2013-08-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  7. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  8. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  9. Fabrication of silicon nanopillar arrays by cesium chloride self-assembly and wet electrochemical etching for solar cell

    Science.gov (United States)

    Liu, Jing; Zhang, Xinshuai; Dong, Gangqiang; Liao, Yuanxun; Wang, Bo; Zhang, Tianchong; Yi, Futing

    2014-01-01

    A simple technology with cesium chloride (CsCl) self-assembly lithography and wet electrochemical etching is introduced to fabricate the wafer scale, disordered, well-aligned, and high aspect ratio silicon nanopillars. The original nano structures of CsCl islands with diameters of 500-2000 nm are formed by self-assembly and used as template of lift-off for the nanoporous gold film for wet electrochemical etching as the catalyst in etching solution of HF and H2O2. The average diameter of silicon nanopillars is determined by the CsCl nanoislands with 500-2000 nm, and the height of silicon nanopillars is mainly determined by the etching time in etching solution with 3-12 μm. The aspect ratio can achieve to 60. The solar cells with different height nanopillars are made for the research of photovoltaic conversion efficiency (PCE). The reflectance of the nanopillars with different height is measured from the wavelength of 400 to 1000 nm and the 9 μm height silicon nanopillars has the lowest one which is below 3%. The PCE shows the highest value of 14.19% at the condition of 3 μm height nanopillars and 12.18% of planar one with the same fabrication process.

  10. Ethanol-wet bonding technique may enhance the bonding performance of contemporary etch-and-rinse dental adhesives.

    Science.gov (United States)

    Li, Fang; Liu, Xiao-Yang; Zhang, Ling; Kang, Jun-Jun; Chen, Ji-Hua

    2012-04-01

    To determine whether bonds of contemporary etch-and-rinse adhesives made with ethanol-wet bonding are stronger and more durable than those made with water-wet bonding, and to explore the possible reasons for the bonding results. Flat surfaces of midcoronal dentin were made in extracted human third molars. The dentin surfaces were randomized into 6 groups according to bonding techniques (water- vs ethanol-wet bonding) and dental adhesives [Single Bond 2 (SB), Prime Bond NT (PB), and Gluma Comfort Bond (GB)]. After etching and rinsing, dentin surfaces were either left water-moist or immersed in ethanol. Following adhesive application and composite buildups, the bonded teeth were sectioned into beams for microtensile bond strength evaluation with or without NaOCl challenge. The morphology of the hybrid layer was analyzed with SEM. The wettability of water- vs. ethanol-saturated dentin was evaluated. The concentrations of non-volatile ingredients in the adhesives were compared. Compared to water-wet bonding, ethanol-wet bonding yielded similar (p > 0.05 for PB and GB) or higher (p adhesives), and produced more even hybrid layers. Moreover, ethanol-saturated dentin exhibited a lower contact angle than water-saturated specimens, and the concentrations of non-volatile ingredients of the adhesives decreased in the order of SB > GB > PB. Ethanol-wet bonding could improve the bonding efficacy of contemporary etch-and-rinse adhesives, probably due to the good wettability of ethanol-saturated dentin and the structure of the hybrid layer. Moreover, this positive effect of ethanol-wet bonding might be influenced by the composition of adhesives.

  11. Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer

    Science.gov (United States)

    Kicin, S.; Cambel, V.; Kuliffayová, M.; Gregušová, D.; Kováčová, E.; Novák, J.; Kostič, I.; Förster, A.

    2002-01-01

    We present a wet-chemical-etching method developed for the preparation of GaAs four-sided pyramid-shaped mesas. The method uses a fast lateral etching of AlAs interlayer that influences the cross-sectional profiles of etched structures. We have tested the method using H3PO4:H2O2:H2O etchant for the (100) GaAs patterning. The sidewalls of the prepared pyramidal structures together with the (100) bottom facet formed the cross-sectional angles 25° and 42° for mask edges parallel, resp. perpendicular to {011} cleavage planes. For mask edges turned in 45° according to the cleavage planes, 42° cross-sectional angles were obtained. Using the method, symmetric and more than 10-μm-high GaAs "Egyptian" pyramids with smooth tilted facets were prepared.

  12. The role of oxidative etching in the synthesis of ultrathin single-crystalline Au nanowires.

    Science.gov (United States)

    Kisner, Alexandre; Heggen, Marc; Fernández, Enrique; Lenk, Steffi; Mayer, Dirk; Simon, Ulrich; Offenhäusser, Andreas; Mourzina, Yulia

    2011-08-16

    The fabrication of ultrathin single-crystal Au nanowires with high aspect ratio and that are stable in air is challenging. Recently, a simple wet-chemical approach using oleylamine has been reported for the synthesis of Au nanowires with micrometer length and 2 nm in diameter. Despite efforts to understand the mechanism of the reaction, an ultimate question about the role of oxygen (O(2)) during the synthesis remained unclear. Here we report that the synthesis of ultrathin Au nanowires employing oleylamine is strongly affected by the amount of O(2) absorbed in the reaction solution. Saturating the solution with O(2) leads to both a high-yield production of nanowires and an increase in their length. Nanowires with diameters of about 2 nm and lengths of 8 μm, which corresponds to an aspect ratio of approximately 4000, were produced. The role of oxygen is attributed to the enhanced oxidation of twin defects on Au nanoparticles formed in the first stage of the reaction. Understanding the role of oxidative etching is crucial to significantly increasing the yield and the length of ultrathin Au nanowires.

  13. Investigation of textured Al-doped ZnO thin films using chemical wet-etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Wei-Lun; Huang, Kuo-Chan [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Yeh, Chih-Hung [R and D Center, NexPower Technology Corporation, Taichung 421, Taiwan (China); Hung, Chen-I [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2011-05-16

    Research highlights: {yields} The effects of deposition temperature on the electrical properties of ZnO:Al film is revealed in this study. {yields} The optical properties of textured ZnO:Al films etched in diluted HCl, H{sub 3}PO{sub 4} and HNO{sub 3} were studied. {yields} The effects of etching parameters on the optical and electrical properties of ZnO:Al film are investigated in this study. {yields} The diluted HNO{sub 3} is the best candidate to fabricate excellent textured surface with the highest haze ratio in this study. - Abstract: In this study, the optical properties and morphologies of Al-doped ZnO (AZO) films textured by the chemical wet-etching method with three different acid species are investigated. An initial AZO film is sputtered on a glass substrate by rf magnetron sputtering. The film surface was then textured by wet-etching using diluted HCl, HNO{sub 3} or H{sub 3}PO{sub 4}. The average transmittance of all the post-treated ZnO:Al films remains around 75-80% as measured by a UV-vis analyzer. A haze ratio calculation shows that the light scattering properties can be significantly controlled by varying the etchant species, acid concentration, and etching time. Atomic force microscopy (AFM) was used to find the average roughness of the textured AZO films. In this study, the HNO{sub 3} etchant gives the highest haze ratio of 49.2% at a wavelength of 550 nm. The textured ZnO:Al films with an electrical resistivity of 5.47 x 10{sup -4} {Omega}-cm, carrier concentrations of 3.98 x 10{sup 20} cm{sup -3} and mobility of 28.7 cm{sup 2} V{sup -1} s{sup -1}, can be obtained when etched in diluted HNO{sub 3} for 60 s. It is found that the chemical wet-etched AZO glass substrate appears to be helpful in enhancing the short circuit current (J{sub sc}) when applied on silicon thin film solar cells.

  14. Combined Effect of Mechanical Grooving and Stain-Etched Surface on Optical and Electrical Properties of Crystalline Silicon Substrates

    Science.gov (United States)

    Zarroug, Ahmed; Derbali, Lotfi; Ouertani, Rachid; Dimassi, Wissem; Ezzaouia, Hatem

    2014-05-01

    This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made by means of a micro-groove machining process prior to junction formation. Subsequently, wafers were subjected to an isotropic potassium hydroxide (KOH) etching so that the V-shape would be turned to a U-shape. We found that the successive treatment of silicon surfaces with stain-etching, grooving then alkaline etching enhances the absorption of the textured surface, and decreases the reflectance from 35% to 7% in the 300-1200 nm wavelength range. We obtained a significant increase in the overall light path that generates the building up of the light trapping inside the substrate. We found an improvement in the illuminated I-V characteristics and an increase in the minority carrier lifetime τeff. Such a simple method was adopted to effectively reinforce the overall device performance of crystalline silicon-based solar cells.

  15. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

    OpenAIRE

    Lyamkina AA; Dmitriev DV; Galitsyn Yu; Kesler VG; Moshchenko SP; Toropov AI

    2010-01-01

    Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height ...

  16. Modeling early in situ wetting of a compacted bentonite buffer installed in low permeable crystalline bedrock

    Science.gov (United States)

    Dessirier, B.; Frampton, A.; Fransson, Å.; Jarsjö, J.

    2016-08-01

    The repository concept for geological disposal of spent nuclear fuel in Sweden and Finland is planned to be constructed in sparsely fractured crystalline bedrock and with an engineered bentonite buffer to embed the waste canisters. An important stage in such a deep repository is the postclosure phase following the deposition and the backfilling operations when the initially unsaturated buffer material gets hydrated by the groundwater delivered by the natural bedrock. We use numerical simulations to interpret observations on buffer wetting gathered during an in situ campaign, the Bentonite Rock Interaction Experiment, in which unsaturated bentonite columns were introduced into deposition holes in the floor of a 417 m deep tunnel at the Äspö Hard Rock Laboratory in Sweden. Our objectives are to assess the performance of state-of-the-art flow models in reproducing the buffer wetting process and to investigate to which extent dependable predictions of buffer wetting times and saturation patterns can be made based on information collected prior to buffer insertion. This would be important for preventing insertion into unsuitable bedrock environments. Field data and modeling results indicate the development of a de-saturated zone in the rock and show that in most cases, the presence or absence of fractures and flow heterogeneity are more important factors for correct wetting predictions than the total inflow. For instance, for an equal open-hole inflow value, homogeneous inflow yields much more rapid buffer wetting than cases where fractures are represented explicitly thus creating heterogeneous inflow distributions.

  17. Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies

    Directory of Open Access Journals (Sweden)

    Rađenović Branislav

    2010-01-01

    Full Text Available Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

  18. Photonic Crystal Fabrication in Lithium Nobate via Pattern Transfer Through Wet and Dry Etched Chromium Mask

    Science.gov (United States)

    2012-10-02

    generation system (NPGS, JC Nabity Lithography Systems) e-beam patterning software. Parame- ters (accelerating voltage, current, etc.) for each machine were...sample contained several patterns of varying size, each of which showed a different rate of expansion, or etching speed —larger features were etched...Optics, Eindhoven , The Netherlands, 11-13 June, 2008 ( Eindhoven Uni- versity of Technology, Department of Electrical Engineering, Division of

  19. Probing Internal Stress and Crystallinity in Wet Foam via Raman Spectroscopy

    Science.gov (United States)

    Barik, T. K.; Bandyopadhyay, P.; Roy, A.

    In this paper, we correlate the internal stress and the characteristics of a vibrational mode in wet foam. Using microscope images, we estimate the average size of the bubbles in wet foam, at specific time intervals, over a duration of 24 h. Raman spectra are also recorded at the same time intervals, over the same time frame. We show that the internal stress, originated from the microscopic structural change of foam with aging, can be related to the observed Raman shift of the low-frequency methylene rocking mode of the constituent surfactant molecules in foam. In this paper, we also show the capability of the Raman spectroscopy to reveal the crystallinity in foamy materials, when studied for a longer period of time.

  20. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  1. Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-05-01

    The NREL "black silicon" nanocatalytic wet-chemical etch is an inexpensive, one-step method to minimize reflections from crystalline silicon solar cells. The technology enables high-efficiency solar cells without the use of expensive antireflection coatings.

  2. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  3. Method for protecting chip corners in wet chemical etching of wafers

    Science.gov (United States)

    Hui, Wing C.

    1994-01-01

    The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

  4. Single-Crystalline Silicon Solar Cell with Selective Emitter Formed by Screen Printing and Chemical Etching Method: A Feasibility Study

    Directory of Open Access Journals (Sweden)

    Yen-Po Chen

    2013-01-01

    Full Text Available A new method for fabricating crystalline silicon solar cells with selective emitters is presented. In this method, shallow trenches corresponding to metal contact area are first formed by screen printing and chemical etching, followed by heavy doping over the whole front surface of the silicon wafer. After a polymer mask is pasted by aligned screen-printing to cover the shallow trenches, the silicon wafer is etched such that the heavy doping remains at the shallow trench area, while other areas become lightly doped. With the presented method, two screening printing steps are required for obtaining a selective emitter structure on a solar wafer. Compared with existing etch-back methods, the presented one is believed to be able to easily conform with present industrial process. Experimental results show that optical responses at the short and long wavelengths were both improved by applying the proposed selective emitter technique to fabricate solar cells with an a-Si:H film deposited on the back surface. The selective emitter cell with a-Si:H back surface deposition had improvements of 1.66 mA/cm2 and 1.23% absolute in Jsc and conversion efficiency, respectively, compared to the reference cell that had a homogeneous emitter and no a-Si:H on the back surface.

  5. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface.

    Science.gov (United States)

    Lyamkina, A A; Dmitriev, D V; Galitsyn, Yu G; Kesler, V G; Moshchenko, S P; Toropov, A I

    2011-12-01

    In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

  6. Laser marking on soda-lime glass by laser-induced backside wet etching with two-beam interference

    Science.gov (United States)

    Nakazumi, Tomoka; Sato, Tadatake; Narazaki, Aiko; Niino, Hiroyuki

    2016-09-01

    For crack-free marking of glass materials, a beam-scanning laser-induced backside wet etching (LIBWE) process by a beam spot with a fine periodic structure was examined. The fine periodic structure was produced within a beam spot by means of a Mach-Zehnder interferometer incorporated to the optical setup for the beam-scanning LIBWE. A fine structure with a period of 9 µm was observed within the microstructures with a diameter of ca. 40 µm fabricated by a laser shot under double-beam irradiation, and they could be homogeneously fabricated within an area of 800  ×  800 µm. The area filled with the microstructures, including fine periodic structures, could be observed in high contrast under a diffuse, on-axis illumination that was used in commercial QR code readers.

  7. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Hao; Yang, Qing; Chen, Feng, E-mail: chenfeng@mail.xjtu.edu.cn; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. - Highlights: • We demonstrate a flexible method to fabricate curvilinear microstructures. • This method composes of femtosecond laser exposures and chemical etching process. • Concave microstructures with different profiles were fabricated on silica glasses. • High-quality microlens arrays and high-aspect-ratio microwells were fabricated.

  8. Wet Etched High Aspect Ratio Microstructures on Quartz for MEMS Applications

    Science.gov (United States)

    Liang, Jinxing; Kohsaka, Fusao; Matsuo, Takahiro; Ueda, Toshitsugu

    Z cut α-quartz wafers were etched in saturated ammonium bifluoride solution at 87 degrees C. The side wall profiles were observed using the scanning electron microscopy (SEM) and plotted dependent on the polar direction. This research focused on investigating high aspect ratio trench and through-hole, which were dependent on the polar direction to the crystal axis. Aspect ratio in dependence on polar direction was also plotted and microchannels with aspect ratio > 3 could be achieved at the polar angle between 30° to 60°. The possibility of application for microcapillary was discussed, and the trench at 45° was considered best. Double-sided etching technique was used for manufacturing through-hole structures. Through-hole at 0° was demonstrated effective for fabrication of capacitive MEMS tilt sensor. Through-holes at 15° and 105° were proposed for fabrication of 90°-arranged two axis capactive tilt sensor, taking advantage of the twofold symmetry property around X axis and threefold symmetry property around Z axis.

  9. Effect of wet vs. dry testing on the mechanical properties of hydrophilic self-etching primer polymers.

    Science.gov (United States)

    Hosaka, Keiichi; Tagami, Junji; Nishitani, Yoshihiro; Yoshiyama, Masahiro; Carrilho, Marcela; Tay, Franklin R; Agee, Kelli A; Pashley, David H

    2007-06-01

    Self-etching primers and adhesives contain very hydrophilic methacrylate monomers that result in high water sorptions by their polymers. Water sorption plasticizes the polymers and lowers their mechanical properties. The purpose of this work was to rank the hydrophilicity of a series of acidic primers by their Hoy's solubility parameters (delta) to determine if there was a significant relationship between the delta of polymers and their mechanical properties. A series of six acidic primer blends containing a fixed concentration of phenyl-P but variable amounts of 2-hydroxyethyl methacrylate (HEMA), 2,2 bi[4-(2-hydroxy-3-methacryloyloxy)propane (BisGMA), and triethylene-glycol dimethacrylate (TEGDMA) was formulated and their Hoy's solubility parameters calculated. The polymers were cast into small 'I' beams and light-cured. The modulus of elasticity (E) and ultimate tensile strength (UTS) were measured in dry polymers and after immersion in water for 24 h. The results showed significant correlations between E and UTS under dry or wet conditions. Both E and UTS fell significantly when the specimens were immersed in water. After water immersion, the E and UTS showed significant correlations with Hoy's delta(p) values. Both E and UTS correlated significantly with the BisGMA concentration of the polymers, either wet or dry. The percentage changes in E or UTS were significantly correlated with the water sorption of the polymers.

  10. Depletion of water molecules during ethanol wet-bonding with etch and rinse dental adhesives

    Energy Technology Data Exchange (ETDEWEB)

    Gregoire, Genevieve, E-mail: gregoire@cict.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062, Toulouse (France); Sharrock, Patrick [Medical and Spatial Imaging Laboratory, University Toulouse III, Ave. Pompidou, 81104, Castres (France); Delannee, Mathieu [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062, Toulouse (France); Delisle, Marie-Bernadette [Faculty of Medicine, University Toulouse III, 31062, Toulouse (France)

    2013-01-01

    The treatment of demineralized dentin with ethanol has been proposed as a way to improve hydrophobic monomer penetration into otherwise water saturated collagen fibrils. The ethanol rinse is expected to preserve the fibrils from collapsing while optimizing resin constituent infiltration for better long term adhesion. The physico-chemical investigations of demineralized dentin confirmed objectively these working hypotheses. Namely, Differential Scanning Calorimetry (DSC) measurements of the melting point of water molecules pointed to the presence of free and bound water states. Unfreezable water was the main type of water remaining following a rinsing step with absolute ethanol. Two different liquid water phases were also observed by Magic Angle Spinning (MAS) solid state Nuclear magnetic Resonance (NMR) spectroscopy. Infrared spectra of ethanol treated specimens illustrated differences with the fully hydrated specimens concerning the polar carbonyl vibrations. Optical microscopy observations as well as scanning electron microscopy showed an improved dentin-adhesive interface with ethanol wet bonding. The results indicate that water can be confined to strongly bound structural molecules when excess water is removed with ethanol prior to adhesive application. This should preserve collagen from hydrolysis upon aging of the hybrid layer. - Highlights: Black-Right-Pointing-Pointer Non-freezable water exists in demineralized dentine. Black-Right-Pointing-Pointer Free water can be removed by ethanol rinse of the demineralized collagen. Black-Right-Pointing-Pointer Ethanol wet bonding leads to a homogeneous hybrid layer free of defects.

  11. Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications.

    Science.gov (United States)

    Van Hoang, Nguyen; Kumar, Sanjeev; Kim, Gil-Ho

    2009-03-25

    The growth of multisegment nanorods comprising gold (Au) and sacrificial silver (Ag) segments (Au-Ag-Au or Au-Ag-Au-Ag-Au) using the electrochemical wet etching method is reported. The nanorods were fabricated using an alumina template of thickness 100 microm and pore size of 200 nm. A variety of nanorods from single to seven segments comprising alternate Au and Ag segments were fabricated with better control of growth rate. The multisegment nanorods were selectively etched by removing the Ag segments to create gaps in the fabricated nanorods. A careful investigation led to the creation of a wide variety of nanogaps in the fabricated multisegment nanorods. The size of the nanogap was controlled by the passage of current through the electrochemical process, and size below 10 nm was achievable at exchanged charges of approximately 1 mC. A further lowering in the size of nanogaps was achieved by diluting the silver plating solution and a segmented nanorod with nanogap (Au-nanogap-Au) of 3.8 nm at exchanged charges of 0.2 mC was successfully created. In addition, segmented nanorods with two or more nanogaps (Au-nanogap-Au-nanogap-Ag) placed symmetrically and asymmetrically on either side of the central Au segments were also created. A prototype of a single-electron transistor device based on segmented nanorods with two nanogaps is proposed. The results obtained could form the basis for the realization of quantum tunneling devices where the barrier thickness is very critical and demands values less than 5 nm. The encouraging results show the promise of multisegment nanorods for fabricating devices working at the de Broglie wavelength such as single-electron transistors.

  12. Laser-induced backside wet etching of silica glass with ns-pulsed DPSS UV laser at the repetition rate of 40 kHz

    Energy Technology Data Exchange (ETDEWEB)

    Niino, Hiroyuki; Kawaguchi, Yoshizo; Sato, Tadatake; Narazaki, Aiko; Gumpenberger, Thomas; Kurosaki, Ryozo [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2007-04-15

    Surface micro-structuring of silica glass plates was performed by using laser- induced backside wet etching (LIBWE) upon irradiation with a single-mode laser beam from a diode-pumped solid-state (DPSS) UV laser with 40 kHz repetition rate at 266 nm. We have succeeded in a well-defined micro-pattern formation without debris and microcrack generation around the etched area on the basis of a galvanometer scanning system for the laser beam. Bubble dynamics after liquid ablation was monitored by impulse pressure detection with a fast- response piezoelectric pressure gauge.

  13. Inverted organic solar cells with ZnO nanowalls prepared using wet chemical etching in a KOH solution.

    Science.gov (United States)

    Shin, Kyung-Sik; Park, Hye-Jeong; Kumar, Brijesh; Kim, Kwon-Ho; Kim, Sang-Hyeob; Kim, Sang-Woo

    2012-02-01

    We report on the photovoltaic (PV) performances of inverted organic solar cells (IOSCs) that were fabricated from PCBM:P3HT polymer with a ZnO thin film and ZnO nanowalls as electron transport and hole block layers. ZnO thin film on ITO/glass substrate was deposited using a simply aqueous solution route. ZnO nanowall structures were obtained via wet chemical etching of ZnO thin films in a KOH solution. The power conversion efficiency (PCE) of the IOSC with ZnO nanowalls was significantly improved by 44% from 1.254% to 1.811% compared to that of the IOSC with ZnO thin film. The short circuit current in IOSCs fabricated with the ZnO nanowalls was increased mainly due to the increase in the charge transport interface area, as a result of enhancement in the PCE. This work suggests a method for fabricating efficient PV devices with a larger charge transport area for future prospects.

  14. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  15. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  16. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  17. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  18. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001 GaAs Surface

    Directory of Open Access Journals (Sweden)

    Lyamkina AA

    2011-01-01

    Full Text Available Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

  19. A high efficiency industrial polysilicon solar cell with a honeycomb-like surface fabricated by wet etching using a photoresist mask

    Science.gov (United States)

    Zhang, Hong; Ding, Bin; Chen, Tianhang

    2016-11-01

    In this paper, an effective and low cost method of texturization was introduced into the fabrication process for industrial multicrystalline silicon solar cell production. The purpose of the method was to reduce reflectance by creating a honeycomb-like textured surface using a masked wet etching process. A negative photoresist film was selected as an etching mask. Although large surface roughness of wafer was considered to affect the adhesion and acid resistance of etching mask, a honeycomb-like textured surface with a pitch of 18 μm was fabricated successfully. The etched pits had a nearly smooth spherical segment surface, an average aperture of 15.1 μm, and a depth of 6.5 μm. This regular textured surface had a low light reflectivity of approximately 20.5% and greatly increased the carrier lifetime. Compared with multicrystalline silicon solar cells textured by conventional acid etching, the average short circuit current increased by 2.2% and the average efficiency increased from 17.41% to 17.75%, a net gain of 0.34%. And a high throughput above 2400 pieces per hour was obtained. This texturing technique is expected to promote the application of diamond-wire cut multicrystalline silicon wafers with the low saw-damage in the future.

  20. Research Progress in Wet Chemical Etching of Silicate Glass%硅酸盐玻璃的化学处理研究进展

    Institute of Scientific and Technical Information of China (English)

    成惠峰; 李要辉; 吴云龙; 傅国英; 纪毅璞

    2011-01-01

    氢氟酸溶液常用于硅酸盐玻璃的表面处理,其化学反应机理一直备受关注.本文从氢氟酸电离反应出发,全面归纳氢氟酸稀溶液电离机理、平衡常数以及各电离产物的作用,重点总结了HF-SiO2反应动力学、各研究理论模型、反应速率公式和反应机理.针对目前硅酸盐玻璃的化学处理研究现状,认为硅酸盐玻璃在高浓度氢氟酸溶液和氢氟酸/强酸混合溶液中化学处理的应用将是未来的研究方向.%The reaction mechanism of wet chemical etching of silicate glass in hydrofluoric acid has attracted extensive attention over many years. Ionization reaction in dilute HF solution was introduced. The ionization equation and equilibrium constants and the function of components in dilute HF solution were reviewed. And the reaction kinetics, model, reaction rate formula and etching mechanism of HF-SiO2 reaction were summarized. In the future the application of wet chemical etching in concentrated HF solution and HF-strong acid mixture of wet chemical etching of silicate glass would be studied.

  1. Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

    2014-03-31

    We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

  2. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  3. Crystalline Structure of the Pb/Si(111)7x7 Stable Wetting Layer

    Science.gov (United States)

    Gramlich, M.; Hayden, S. T.; Chen, Yiyao; Kim, C.; Tringides, M. C.; Miceli, P. F.

    2012-02-01

    The wetting layer formation in the Pb/Si(111)7x7 system has attracted extensive interest because of anomalously fast kinetics, which enables the formation of quantum size effect (QSE) nanoislands [Jeffrey et al. PRL 96, 106105 (2006)]. However, previous studies of the wetting layer by x-ray diffraction and scanning-probes have led to inconsistent structural models; thus, the structure of this wetting layer has been unsolved. Furthermore, a recent investigation has revealed that the wetting layer is out-of-equilibrium over a surprisingly broad temperature range [Gramlich et al., PRB 84, 075433 (2011)]. Using in situ x-ray scattering methods, we have solved the stable, low temperature annealed structure of the wetting layer. It exhibits a strained atomic layer where Pb atoms are in transition, from Si-7x7 sites towards 8x8-sites, with some Pb-atoms vertically closer to the Si-7x7. Interestingly, the Si adatoms shift to the edges of the unit cell. Funding is acknowledged from NSF DMR-0706278 (PFM, MWG, STH, YC, and the Ministry of Knowledge Economy of Korea 2009-F014-01 (CK). The experiments were performed on the 6IDC beam line, supported by the US-DOE (through Ames Lab, W-7405-Eng-82), at the Advanced Photon Source (US-DOE, W-31-109-Eng-38) located at Argonne National Laboratory.

  4. Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution

    Directory of Open Access Journals (Sweden)

    Han Lu

    2016-01-01

    Full Text Available Anisotropic etching of silicon in potassium hydroxide (KOH is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-layer complex structures. Square patterns with size in the range of 15–150 μm and gap distance of 5 μm have been designed and tested. The residue masking layer appears when the substrate is over-etched in hydrofluoric acid (HF solution over a threshold. The two-layer structures of micropyramids surrounded by wall-like structures are obtained according to the two different masking layers of SiO2 and residue. The residue masking layer is stable and can survive over KOH etching for long time to achieve deep Si etching. The process parameters of etchant concentration, temperature, etching time and pattern size have been investigated. With well-controlled two-layer structures, useful structures could be designed for applications in plasmonic and microfluidic devices in the future.

  5. Ordered silicon nanowire arrays prepared by an improved nanospheres self-assembly in combination with Ag-assisted wet chemical etching

    Science.gov (United States)

    Jia, Guobin; Westphalen, Jasper; Drexler, Jan; Plentz, Jonathan; Dellith, Jan; Dellith, Andrea; Andrä, Gudrun; Falk, Fritz

    2016-04-01

    An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced.

  6. 利用湿法刻蚀的方式制备黑硅%Preparation of Black Silicon by Means of Wet Etching

    Institute of Scientific and Technical Information of China (English)

    张安元; 吴志明; 赵国栋; 姜晶; 郭振宇

    2011-01-01

    采用一种简便的方法制备出具有很好光吸收性能的黑硅材料,利用化学气象沉积和光刻的方式在硅片(100)表面形成圆形Si3 N4掩膜,然后采用两种湿法刻蚀相结合方式来制备黑硅材料.首先采用碱刻蚀的方式对硅片进行各向异性刻蚀,刻蚀完成后在硅片表面形成尖锥形貌;后期利用金纳米颗粒作为催化剂,采用酸刻蚀的方式对硅片表面进行改性,在硅片表面形成多孔结构.这种黑硅材料在250~1 000 nm波段的光吸收率可以达到95%以上.%A simple method of preparing black silicon (BS) with high optical absorptivity is introduced. During the prepa-ration, the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon (100), and then two kinds of wet etching are used to prepare the black silicon material. The first step is that the anisotropic etching on a silicon wafer is performed with the method of alkali etching to form the tip morphology on the silicon surface. Af-ter that, some gold nanoparticles are taken as the catalyst to modify the surface of the silicon by the method of acid etching for forming a porous structure on the silicon surface. The optical absorptivity of the black silicon can reach 95 % at the wavelength of 250-1000 nm.

  7. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

    2015-06-15

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

  8. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  9. COMBINED EFFECT OF MECHANICAL GROOVING AND STAIN-ETCHED SURFACE ON OPTICAL AND ELECTRICAL PROPERTIES OF CRYSTALLINE SILICON SUBSTRATES

    OpenAIRE

    AHMED ZARROUG; LOTFI DERBALI; RACHID OUERTANI; WISSEM DIMASSI; HATEM EZZAOUIA

    2014-01-01

    This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made...

  10. Wet chemical methods for producing mixing crystalline phase ZrO2 thin film

    Science.gov (United States)

    Pakma, Osman; Özdemir, Cengiz; Kariper, İ. Afşin; Özaydın, Cihat; Güllü, Ömer

    2016-07-01

    The aim of the study is to develop a more economical and easier method for obtaining ZrO2 thin films at lower temperature, unlike the ones mentioned in the literature. For this purpose, wet chemical synthesis methods have been tested and XRD, UV-VIS and SEM analysis of ZrO2 thin films have been performed. At the end of the analysis, we identified the best method and it has been found that the features of the films produced with this method were better than the films produced by using different reagents, as well as the films reported in the literature. Especially it has been observed that the transmittance of the film produced with this method were higher and better than the films in the literature and the others. In addition, refractive index of the film produced with this method was observed to be lower. Moreover, by using the same method Al/ZrO2/p-Si structure has been obtained and it has been compared with Al/p-Si reference structure in terms of electrical parameters.

  11. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  12. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  13. Three dimensional material removal model of laser-induced backside wet etching of sapphire substrate with CuSO4 solutions

    Science.gov (United States)

    Xie, Xiaozhu; Huang, Xiandong; Jiang, Wei; Wei, Xin; Hu, Wei; Ren, Qinglei

    2017-03-01

    The mechanism of laser-induced backside wet etching (LIBWE) of sapphire substrate with CuSO4 solution is considered as a two-step process. First, it deposits the layer from copper sulfate solution on the backside of sapphire substrate by 1064 nm laser irradiation. Then it is followed by the absorption of deposited layer to laser irradiation, resulting in the etching of the sapphire. Therefore, the material removal of LIBWE is based on laser interaction with multilayer materials (sapphire substrate-deposition layer-liquid solution). A three-dimensional thermal model is established to simulate the material removal during the LIBWE process by considering the material data variations of temperature, enthalpy change and latent heat fusion. The model can predict the groove shape influenced by the laser processing parameters (laser fluence, scanning velocity and scanning pass). The simulation results indicate that the groove depth increases with the decreasing of scanning velocity, the increasing of laser fluence and the scanning pass. The groove width is comparable with the focal beam diameter. Some peaks and valleys occur at the bottom of the groove. A comparison between the modeling and experiment indicates that the groove shape in simulation agrees well with the experiment data at laser pulse energy of 4.3 mJ/pulse, scanning velocity of 15 mm/s and the scanning pass of 4. i.e, the present physical model is effective and feasible.

  14. Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

    Science.gov (United States)

    Bian, Hao; Wei, Yang; Yang, Qing; Chen, Feng; Zhang, Fan; Du, Guangqing; Yong, Jiale; Hou, Xun

    2016-11-01

    We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

  15. Study of variation in surface morphology, chemical composition, crystallinity and hardness of laser irradiated silver in dry and wet environments

    Science.gov (United States)

    Ali, Nisar; Bashir, Shazia; Umm-i-Kalsoom; Begum, Narjis; Hussain, Tousif

    2017-07-01

    Variation in surface morphology, chemical composition, crystallinity and hardness of laser irradiated silver in dry and wet ambient environments has been investigated. For this purpose, the silver targets were exposed for various number of laser pulses in ambient environment of air, ethanol and de-ionized water for various number of laser pulses i.e. 500, 1000, 1500 and 2000. Scanning Electron Microscope (SEM) was employed to investigate the surface morphology of irradiated silver. SEM analysis reveals significant surface variations for both dry and wet ambient environments. For lower number of pulses, in air environment significant mass removal is observed but in case of ethanol no significant change in surface morphology is observed. In case of de-ionized water small sized cavities are observed with formation of protrusions with spherical top ends. For higher number of laser pulses, refilling of cavities by shock liquefied material, globules and protrusions are observed in case of dry ablation. For ablation in ethanol porous and coarse periodic ripples are observed whereas, for de-ionized water increasing density of protrusions is observed for higher number of pulses. EDS analysis exhibits the variation in chemical composition along with an enhanced diffusion of oxygen under both ambient conditions. The crystal structure of the exposed targets were explored by X-ray Diffraction (XRD) technique. XRD results support the EDS results. Formation of Ag2O in case of air and ethanol whereas, Ag2O and Ag3O in case of de-ionized water confirms the diffusion of oxygen into the silver surface after irradiation. Vickers Hardness tester was employed to measure the hardness of laser treated targets. Enhanced hardness is observed after irradiation in both dry and wet ambient environments. Initial decrease and then increase in hardness is observed with increase in number of laser pulses in air environment. In case of ethanol, increase in number of laser pulses results in

  16. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    Science.gov (United States)

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching.

  17. Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 (United States); George, Steven M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 and Department of Mechanical Engineering, University of Colorado at Boulder, Colorado 80309 (United States)

    2016-09-15

    Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){sub 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.

  18. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  19. Crystalline silica dust and respirable particulate matter during indoor concrete grinding - wet grinding and ventilated grinding compared with uncontrolled conventional grinding.

    Science.gov (United States)

    Akbar-Khanzadeh, Farhang; Milz, Sheryl; Ames, April; Susi, Pamela P; Bisesi, Michael; Khuder, Sadik A; Akbar-Khanzadeh, Mahboubeh

    2007-10-01

    The effectiveness of wet grinding (wet dust reduction method) and ventilated grinding (local exhaust ventilation method, LEV) in reducing the levels of respirable crystalline silica dust (quartz) and respirable suspended particulate matter (RSP) were compared with that of uncontrolled (no dust reduction method) conventional grinding. A field laboratory was set up to simulate concrete surface grinding using hand-held angle grinders in an enclosed workplace. A total of 34 personal samples (16 pairs side-by-side and 2 singles) and 5 background air samples were collected during 18 concrete grinding sessions ranging from 15-93 min. General ventilation had no statistically significant effect on operator's exposure to dust. Overall, the arithmetic mean concentrations of respirable crystalline silica dust and RSP in personal air samples during: (i) five sessions of uncontrolled conventional grinding were respectively 61.7 and 611 mg/m(3) (ii) seven sessions of wet grinding were 0.896 and 11.9 mg/m(3) and (iii) six sessions of LEV grinding were 0.155 and 1.99 mg/m(3). Uncontrolled conventional grinding generated relatively high levels of respirable silica dust and proportionally high levels of RSP. Wet grinding was effective in reducing the geometric mean concentrations of respirable silica dust 98.2% and RSP 97.6%. LEV grinding was even more effective and reduced the geometric mean concentrations of respirable silica dust 99.7% and RSP 99.6%. Nevertheless, the average level of respirable silica dust (i) during wet grinding was 0.959 mg/m(3) (38 times the American Conference of Governmental Industrial Hygienists [ACGIH] threshold limit value [TLV] of 0.025 mg/m(3)) and (ii) during LEV grinding was 0.155 mg/m(3) (6 times the ACGIH TLV). Further studies are needed to examine the effectiveness of a greater variety of models, types, and sizes of grinders on different types of cement in different positions and also to test the simulated field lab experimentation in the field.

  20. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  1. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  2. Influence of Electron Cyclotron Resonance Plasma Etching on the Optical and Wetting Properties of Glass%ECR等离子体刻蚀对玻璃光学和润湿性能的影响

    Institute of Scientific and Technical Information of China (English)

    宋雪梅; 王亮; 陈宇; 孟祥曼; 王波; 严辉

    2015-01-01

    In order to improve the transmittance and self-cleaning properties of solar cell cover glass. The borosilicate glass was etched by electron cyclotron resonance ( ECR ) plasma etching with metal nanoparticles mask. The glass surface after etching was observed by scanning electron microscopy ( SEM ) . The change of the transmittance of the glass after etching was measured by the UV-VIS spectrophotometer. The wetting property of the bare and etching glass was determined by the contact angle instrument. The results show the mountainous structure was formed on glass substrate after ECR plasma etching,and its average size ranges from 80 nm to 140 nm. The visible light transmittance of the glass is effectively improved. It increases from 91% to 94. 4% with the bias etching. Moreover, It enhancs the hydrophilicity on the surface of the glass. The lower contact angle (θc) of 7. 4° is obtained compared to the bare glass substrate (θc~47. 2°). The self-cleaning properties are improved.%为了提高太阳能电池盖板玻璃的透过率和自清洁性能,采用电子回旋共振( ECR)等离子体刻蚀与金属颗粒掩膜结合的方法刻蚀硼硅酸盐玻璃,采用扫描电镜( SEM)对刻蚀后玻璃表面形貌进行了观察,采用分光光度计测量了刻蚀前后玻璃透过率变化,并用接触角仪测定了刻蚀前后玻璃表面润湿性变化. 结果表明:经过ECR等离子体刻蚀后,在玻璃表面形成多山峰状纳米结构,平均尺寸约在80~140 nm,并有效提高了玻璃的可见光透过率,尤其是在有偏压刻蚀后透过率由原来91%提高到94. 4%,同时,玻璃表面亲水性增强,接触角θc由原来的47. 2°变为7. 4°,自清洁性能得到提高.

  3. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  4. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    Production of large-area flat panel displays (FPDs) involves several pattern transfer and device fabrication steps that can be performed with dry etching technologies. Even though the dry etching using capacitively coupled plasma is generally used to maintain high etch uniformity, due to the need...... for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  5. Wet-chemical systems and methods for producing black silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

    2015-05-19

    A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

  6. Wetting and reaction characteristics of crystalline and amorphous SiO2 derived rice-husk ash and SiO2/SiC substrates with Al-Si-Mg alloys

    Science.gov (United States)

    Bahrami, A.; Pech-Canul, M. I.; Gutiérrez, C. A.; Soltani, N.

    2015-12-01

    A study of the wetting behavior of three substrate types (SiC, SiO2-derived RHA and SiC/SiO2-derived RHA) by two Al-Si-Mg alloys using the sessile drop method has been conducted, using amorphous and crystalline SiO2 in the experiment. Mostly, there is a transition from non-wetting to wetting contact angles, being the lowest θ values achieved with the alloy of high Mg content in contact with amorphous SiO2. The observed wetting behavior is attributed to the deposited Mg on the substrates. A strong diffusion of Si from the SiC/Amorphous RHA substrate into the metal drop explains the free Si segregated at the drop/substrate interface and drop surface. Although incorporation of both SiO2-derived RHA structures into the SiC powder compact substrates increases the contact angles in comparison with the SiC substrate alone, the still observed acute contact angles in RHA/SiC substrates make them promising for fabrication of composites with high volume fraction of reinforcement by the pressureless infiltration technique. The observed wetting characteristics, with decrease in surface tension and contact angles is explained by surface related phenomena. Based on contact angle changes, drop dimensions and surface tension values, as well as on the interfacial elemental mapping, and XRD analysis of substrates, some wetting and reaction pathways are proposed and discussed.

  7. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    Energy Technology Data Exchange (ETDEWEB)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L [Complex Photonic Systems (COPS), MESA Institute for Nanotechnology and Department of Science and Technology, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Jansen, Henri V [Transducers Science and Technology (TST), MESA Institute for Nanotechnology and Department of Electrical Engineering, Mathematics and Computer Science, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Setija, Irwan D [ASML Netherlands B V, De Run 6501, NL-5504 DR Veldhoven (Netherlands)], E-mail: l.a.woldering@utwente.nl

    2008-04-09

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF{sub 6}, optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

  8. Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

    Science.gov (United States)

    Ben Rabha, Mohamed; Khezami, Lotfi; Jemai, Abdelbasset Bessadok; Alhathlool, Raed; Ajbar, Abdelhamid

    2017-03-01

    Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary developed wet etching method for producing uniform semiconductor nanostructure (silicon nanowires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs).The creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. The combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties especially a PL response at 640 nm are presented. As a results, the effective lifetime (τeff) and surface recombination velocity (Seff) evolution of SiNWs after stain etching treatment showed significant improvements and less than 1% reflectance was achieved over the wavelength range of 400-800 nm and more than 36% reduction was observed compared to untreated surface. It has, thus, been demonstrated that all these factors may lead to improved energy efficiency from 8% to nearly 14.2% for a cell with SiNWs treated in acid (HF/HNO3/H2O) solution.

  9. Two Patterning Techniques for Superconducting MgB2 Films by Wet Etching%两种二硼化镁超导薄膜布图布线的湿法刻蚀技术

    Institute of Scientific and Technical Information of China (English)

    周章渝; 杨发顺; 杨健; 王松; 邓朝勇; 傅兴华

    2012-01-01

    Effectively patterning of MgB2 thin film is a very critical step to the application of superconducting films in superconducting electronics.Two patterning techniques for superconductive MgB2 films by wet etching were presented.In the first technique the precursor boron films were patterned by using H2O2 as etchant.Then the samples were annealed in magnesium vapor in a tantalum crucible,and the patterned boron films were transformed to superconducting MgB2 films.In the second technique the MgB2 films were patterned directly by a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) solutions.The patterned MgB2 films with rather high resolution were fabricated successfully by using above techniques.The transition temperature (Tc) of the patterned MgB2 films is around 38K and critical current density (Ic) is about 1 × 106 A/cm2.%超导薄膜实现布图布线工艺是制备超导电子元件的必要步骤.报道了两种二硼化镁超导薄膜布图布线的湿法刻蚀技术:一种是先利用双氧水( H2O2)刻蚀前驱体硼薄膜,然后将刻蚀的样品放入钽坩埚中在镁蒸气下高温退火,实现了对超导薄膜二硼化镁(MgB2)布图布线的刻蚀;另一种是选用氢氟酸(HF)和硝酸(HNO3)的混合溶液直接在二硼化镁超导薄膜上进行图形刻蚀.通过上述两种方法刻蚀出的MgB2薄膜图形精确度高,超导转变温度Tc都在38K以上,临界电流Ic约为1×106 A/cm2.

  10. Investigation of the Influence of PLA Molecular Structure on the Crystalline Forms (α’ and α and Mechanical Properties of Wet Spinning Fibres

    Directory of Open Access Journals (Sweden)

    Michał Puchalski

    2017-01-01

    Full Text Available In this paper, the influence of the molecular structure of polylactide (PLA—characterised by its molar mass and content of d-lactide isomer—on the molecular ordering and α’–α form transition during fibre manufacturing by the wet spinning method is described. Fibres were studied by wide-angle X-ray diffraction (WAXD and differential scanning calorimetry (DSC. Additionally, the physical and mechanical properties of the fibres were determined. This study also examines the preliminary molecular ordering and crystallisation of PLA fibres at various draw ratios. The performed experiments clearly show the dependence of the molecular ordering of PLA on the molar mass and d-lactide content during the wet spinning process. The fibres manufactured from PLA with the lowest content of d-lactide and the lowest molar mass were characterised by a higher tendency for crystallisation and a higher possibility to undergo the disorder-to-order phase transition (α’ to α form. The structural changes in PLA explain the observed changes in the physical and mechanical properties of the obtained fibres.

  11. Nanotexturing of Conjugated Polymers via One-Step Maskless Oxygen Plasma Etching for Enhanced Tunable Wettability.

    Science.gov (United States)

    Jiang, Youhua; Xu, Jian; Lee, Junghoon; Du, Ke; Yang, Eui-Hyeok; Moon, Myoung-Woon; Choi, Chang-Hwan

    2017-07-11

    A one-step maskless oxygen plasma etching process is investigated to nanopattern conjugated polymer dodecylbenzenesulfonate doped polypyrrole (PPy(DBS)) and to examine the effects of nanostructures on the inherent tunable wettability of the surface and the droplet mobility. Etching characteristics such as the geometry and dimensions of the nanostructures are systematically examined for the etching power and duration. The mechanism of self-formation of vertically aligned dense-array pillared nanostructures in the one-step maskless oxygen plasma etching process is also investigated. Results show that lateral dimensions such as the periodicity and diameter of the pillared nanostructures are insensitive to the etching power and duration, whereas the length and aspect ratio of the nanostructures increase with them. X-ray photoelectron spectroscopy analysis and thermal treatment of the polymer reveal that the codeposition of impurities on the surface resulting from the holding substrate is the primary reason for the self-formation of nanostructures during the oxygen plasma etching, whereas the local crystallinity subject to thermal treatment has a minor effect on the lateral dimensions. Retaining the tunable wettability (oleophobicity) for organic droplets during the electrochemical redox (i.e., reduction and oxidization) process, the nanotextured PPy(DBS) surface shows significant enhancement of droplet mobility compared to that of the flat PPy(DBS) surface with no nanotexture by making the surface superoleophobic (i.e., in a Cassie-Baxter wetting state). Such enhancement of the tunable oleophobicity and droplet mobility of the conjugated polymer will be of great significance in many applications such as microfluidics, lab-on-a-chip devices, and water/oil treatment.

  12. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  13. Relation between light trapping and surface topography of plasma textured crystalline silicon wafers

    NARCIS (Netherlands)

    Souren, F. M. M.; Rentsch, J.; M. C. M. van de Sanden,

    2015-01-01

    Currently, in the photovoltaic industry, wet chemical etching technologies are used for saw damage removal and surface texturing. Alternative to wet chemical etching is plasma etching. However, as for example, the linear microwave plasma technique, developed by Roth&Rau, has not been implemented

  14. Relation between light trapping and surface topography of plasma textured crystalline silicon wafers

    NARCIS (Netherlands)

    Souren, F. M. M.; Rentsch, J.; M. C. M. van de Sanden,

    2015-01-01

    Currently, in the photovoltaic industry, wet chemical etching technologies are used for saw damage removal and surface texturing. Alternative to wet chemical etching is plasma etching. However, as for example, the linear microwave plasma technique, developed by Roth&Rau, has not been implemented

  15. Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Semenova, Elizaveta; Yvind, Kresten;

    2013-01-01

    The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward Ga...

  16. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  17. Cross-linking reaction kinetics of non-crystalline cassava starch in middle and high temperature wet processes%非晶化木薯淀粉交联反应动力学

    Institute of Scientific and Technical Information of China (English)

    罗明辉; 邓燕芳; 卢龙

    2013-01-01

    以非晶化木薯淀粉为原料,通过湿法交联合成淀粉磷酸酯,研究了非晶化木薯淀粉交联反应动力学过程,计算出表观活化能 Ea,讨论了不同温度对交联反应速率的影响。通过与木薯原淀粉湿法交联对比,研究了非晶化处理对淀粉后续反应的影响。结果表明,非晶化处理后,淀粉交联反应的反应取代度和反应程度均提高,表观活化能降低了23%,反应活性得到大大提高。%The starch diphosphate was synthesized by non-crystalline cassava starch through wet process. The influence of temperature on reaction rate was discussed.The kinetics and apparent activation energy of non-crystalline cassava starch in cross-linking reaction were studied.Compared with raw cassava starch,the influence of non-crystallization on consequent reaction was studied.The results showed the degree of sub-stitution and extent of reaction were both increased after non-crystallization,the apparent activation energy was descended by 23%,and the reaction activity was improved.

  18. Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells

    DEFF Research Database (Denmark)

    Jørgensen, Anders Michael; Clausen, Thomas; Leistiko, Otto

    1998-01-01

    62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol...... (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick...

  19. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik;

    2014-01-01

    in a liquid reacts with material from the substrate is the ability to fine‐tune the etch process. In wet processing the removal of material generally occurs indiscriminately of direction in the substrate ‐ hence in all directions. This puts a strong limitation on what may be achieved in terms of designs...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  20. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  1. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  2. Research on Spectrum of Conditions of Dry CdTe. Solar Cells Under and Wet Etching%干湿法腐蚀工艺条件下CdTe薄膜光谱研究

    Institute of Scientific and Technical Information of China (English)

    宋慧瑾; 鄢强

    2012-01-01

    The surface of CdTe thin films was etched by plasma bombardment sputtering and corroded by methyl bromide. The two types of spectnam properties of CdTe thin films were compared under the two con- ditions. The results show that plasma bombardment sputtering can remove the surface oxide layer completely and make the partiches of the thin films more even and compact, which show that compared with methyl bromide corrosion, it can improve micro-roughness of the surface and improve the quality of the crystal par- ticles and the adhesion of the film.%采用等离子束溅射轰击刻蚀和溴甲醇腐蚀对CdTe薄膜表面进行后处理.对比研究了2种腐蚀条件下CdTe薄膜的光谱特性.结果表明:等离子束溅射轰击刻蚀可以彻底清除CdTe薄膜表面的氧化层,刻蚀后的CdTe薄膜颗粒更为均匀致密,等离子体刻蚀与溴甲醇腐蚀相比,可以改善CdTe薄膜表面的粗糙度,增强薄膜的附着力,改善薄膜的性能.

  3. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  4. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  5. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    Science.gov (United States)

    Zahedinejad, Mohammad; Delaram Farimani, Saeed; Khaje, Mahdi; Mehrara, Hamed; Erfanian, Alireza; Zeinali, Firooz

    2013-05-01

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques.

  6. Parametric study on the solderability of etched PWB copper

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  7. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  8. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Directory of Open Access Journals (Sweden)

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  9. Extreme ultraviolet lithography mask etch study and overview

    Science.gov (United States)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  10. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

    Science.gov (United States)

    Srivastava, Sanjay K.; Kumar, Dinesh; Schmitt, S. W.; Sood, K. N.; Christiansen, S. H.; Singh, P. K.

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80 °C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50 °C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ˜0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ˜35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.

  11. Evolutionary Design and Prototyping of Single Crystalline Titanium Nitride Lattice Optics (Postprint)

    Science.gov (United States)

    2017-01-17

    two nanohole sizes can be potentially produced by directional dry etching techniques using chlorine plasma .30 The OLEA could also solve for...films by combining focused ion beam milling and wet chemical etching . Multilevel phase control was achieved by tuning nanohole size, and multipoint...combining focused ion beam milling and wet chemical etching . Multilevel phase control was achieved by tuning nanohole size, and multipoint focusing with

  12. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  13. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  14. Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates

    NARCIS (Netherlands)

    Nijdam, A.J.; Berenschot, Johan W.; van Suchtelen, J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt

    In anisotropic wet-chemical etching of silicon the etch rate ratio of [Left Angle Bracket] 100 [Right Angle Bracket] to [Left Angle Bracket] 111 [Right Angle Bracket] orientations is an important parameter that determines the reproducibility and accuracy of microstructures. Up to now, it is not

  15. Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Mohamed Fathi

    2007-01-01

    Full Text Available We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm. Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

  16. Review of micromachining of ceramics by etching

    Institute of Scientific and Technical Information of China (English)

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  17. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  18. Wetting Splashing

    CERN Document Server

    Tsai, Peichun; Dijkstra, Remko; Lohse, Detlef

    2010-01-01

    We present fluid dynamics videos illustrating wetting splashing-produced by water drop impact onto hydrophobic microstructures at high impact velocity ($\\sim 3$ ms$^{-1}$). The substrate consists of regular and transparent microtextures in square or hexagonal lattice, yielding a high contact angle of $\\sim 150 ^\\circ$. Our high speed top-or-bottom view recordings through the transparent surface shed light on the solid-liquid-air interfaces at impact. Despite the superhydrophobicity of the latticed micropillars (of a periodicity of $10 {\\mu}m), water droplet wets a certain central area and moreover entraps an air bubble beneath the droplet. Besides the central wet area, lamella surf on air splashing outward at high impinging velocity. The effects of micropatterns and air pressure on the impact outcome are also examined. We show that microscopic boundary condition, imposed by the solid texture, profoundly influences the macroscopic flow dynamics upon superhydrophobic surfaces at high impinging velocity. In addi...

  19. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  20. Electron Beam Etching of CaO Crystals Observed Atom by Atom.

    Science.gov (United States)

    Shen, Yuting; Xu, Tao; Tan, Xiaodong; Sun, Jun; He, Longbing; Yin, Kuibo; Zhou, Yilong; Banhart, Florian; Sun, Litao

    2017-08-09

    With the rapid development of nanoscale structuring technology, the precision in the etching reaches the sub-10 nm scale today. However, with the ongoing development of nanofabrication the etching mechanisms with atomic precision still have to be understood in detail and improved. Here we observe, atom by atom, how preferential facets form in CaO crystals that are etched by an electron beam in an in situ high-resolution transmission electron microscope (HRTEM). An etching mechanism under electron beam irradiation is observed that is surprisingly similar to chemical etching and results in the formation of nanofacets. The observations also explain the dynamics of surface roughening. Our findings show how electron beam etching technology can be developed to ultimately realize tailoring of the facets of various crystalline materials with atomic precision.

  1. Examination of the anisotropy of the wetting behaviour of liquid Al-Cu alloys on single crystalline oriented Al{sub 2}O{sub 3}-substrates; Untersuchung der Anisotropie im Benetzungsverhalten fluessiger Al-Cu Legierungen auf einkristallinen orientierten Al{sub 2}O{sub 3}-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Julianna

    2011-02-04

    The wetting behaviour of liquid Al-Cu alloys and pure metals on oriented single crystalline Al{sub 2}O{sub 3}-substrates was examined, utilising the sessile drop technique. Measurements were performed at moderate temperatures of 1100 C, where the alloys are liquid. Different Al{sub 2}O{sub 3}-surfaces were studied, which are terminated by the crystallographic planes (0001), (11 anti 20), and (1 anti 102), also called C-, A-, and R-surfaces. After deposition, pure Cu-droplets show an exponential increase of the wetting angle to a value of about 115 for all investigated Al{sub 2}O{sub 3}-surfaces. The timescale of this increase is of the order of 100 s. The effect of surface- and interfacial energies on the wetting angle is discussed considering Young's equation. The most probable reason for its time-dependence seems to be an increase of the interfacial energy due to deoxidation of the droplet. Therefore it is reasonable to regard the isotropic contact angle value as the intrinsic one of the Cu/Al{sub 2}O{sub 3} system. In contrast, the wetting angle of pure Al metal with the different Al{sub 2}O{sub 3}-substrates shows a qualitatively different behaviour. In this system, it rises from about 90 to 115 roughly for C-substrates, twice as fast as in the Cu case but to a comparable value. On the other substrates a wetting angle of about 90 establishes immediately, and no pronounced time dependence is obvious. In order to study changes in the wetting behaviour of Al-Cu-alloys, which is isotropic for Cu and anisotropic for Al-rich alloys, contact angles of Al{sub 50}Cu{sub 50}, Al{sub 30}Cu{sub 70} und Al{sub 17}Cu{sub 83} on Al{sub 2}O{sub 3} were determined. For each alloy composition the wetting angle is about 120 after 300 s. The initial values on distinct surfaces hardly differ and become non-wetting with increasing Cu-content. Hence, anisotropy decreases. To determine the work of adhesion of the solid-liquid interface, the temperature- and composition

  2. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  3. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    Energy Technology Data Exchange (ETDEWEB)

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  4. Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications

    Science.gov (United States)

    Prévost, Emilie; Cunge, Gilles; De-Buttet, Côme; Lagrasta, Sebastien; Vallier, Laurent; Petit-Etienne, Camille

    2017-03-01

    The evolution of integrated components in the semiconductors industry is nowadays looking for ultra-high selective etching processes in order to etch high aspect ratio structures in complicated stacks of ultrathin layers. For ultra-high selective processes, typical plasma etching show limitations, while wet etching processes reach limitations due to capillary forces. For these reasons there is a great regain of interest today in chemical downstream etching systems (CDE), which combine the advantages of plasma and wet treatments. The absence of photons and ions allow to minimize damages and to achieve very high selectivity (in isotropic etching). In this work we investigated the parameters enabling to etch selectively the Si3N4 to the SiO2 by CDE. We shown that the correlation between the gas mixture and the wafer temperature is the key to obtain the desired selectivity. In order to optimize the processing window, the mixture composition (NF3/N2/O2/He) and the temperatures were screened by several DOE (Designs Of Experiments). Conditions are found in which the etching selectivity between the two silicon alloys is higher than 100, which allowed us to clean out sacrificial Si3N4 layers in very high aspect ratio (about 100) silicon trenches of nanometric size (60nm) without damaging the 10nm thin SiO2 caping layer (between the Si and the Si3N4). This demonstrates that downstream plasma etching can perform better than wet treatments in this case.

  5. Bietti's Crystalline Dystrophy

    Science.gov (United States)

    ... Dystrophy > Facts About Bietti's Crystalline Dystrophy Facts About Bietti's Crystalline Dystrophy This information was developed by the ... is the best person to answer specific questions. Bietti’s Crystalline Dystrophy Defined What is Bietti’s Crystalline Dystrophy? ...

  6. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was ......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber....... It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  7. Novel diamantane polymer platform for enhanced etch resistance

    Science.gov (United States)

    Padmanaban, Munirathna; Chakrapani, Srinivasan; Lin, Guanyang; Kudo, Takanori; Parthasarathy, Deepa; Rahman, Dalil; Anyadiegwu, Clement; Antonio, Charito; Dammel, Ralph R.; Liu, Shenggao; Lam, Frederick; Waitz, Anthony; Yamagchi, Masao; Maehara, Takayuki

    2007-03-01

    The dominant current 193 nm photoresist platform is based on adamantane derivatives. This paper reports on the use of derivatives of diamantane, the next higher homolog of adamantane, in the diamondoid series, as monomers in photoresists. Due to their low Ohnishi number and incremental structural parameter (ISP), such molecules are expected to enhance dry etch stability when incorporated into polymers for resist applications. Starting from the diamantane parent, cleavable and non-cleavable acrylate/methacrylate derivatives of diamantane were obtained using similar chemical steps as for adamantane derivatization. This paper reports on the lithographic and etch performance obtained with a number of diamantane-containing monomers, such as 9-hydroxy-4-diamantyl methacrylate (HDiMA), 2-ethyl-2- diamantyl methacrylate (EDiMA), and 2-methyl-2-diamantyl methacrylate (MDiMA). The etch advantage, dry and wet lithographic performance of some of the polymers obtained from these diamantane-containing polymers are discussed.

  8. Production of Porous ZnSe by Electrochemical Etching Method

    Directory of Open Access Journals (Sweden)

    А.F. Dyadenchuk

    2013-10-01

    Full Text Available Here we describe the production features of a porous layer on the surface of n-type single-crystalline zinc selenide. The surface structure is investigated and the photomicrographs of porous layers of the treated ZnSe crystal are represented. Process of the mosaic structure formation depending on the etching time is considered. The value of the flat-band potential with respect to the used electrolyte is calculated.

  9. Studies of CR-39 etch rates

    CERN Document Server

    Rana, M A

    2002-01-01

    A series of chemical etching experiments have been carried out on CR-39 detectors irradiated with fission fragments of sup 2 sup 5 sup 2 Cf to study the bulk and track etching characteristics. Experimental data has been analyzed to find out important track etch parameters. Both bulk and track etch rates are found to follow the Arrhenius equation which gives the variation of etch rate with temperature for a specific set of etching conditions. Activation energies for bulk and track etching have been determined by fitting Arrhenius equation to the experimental data. Other track etch parameters, e.g. critical angle of etching and track registration efficiency have also been determined using experimental data. Track etch parameters depend on properties of incident ion and etching conditions. Results describing the dependence of track etch parameters on etching conditions have been presented. These results are useful in the interpretation of track data.

  10. Micro-Etched Platforms for Thermal Inactivation of Bacillus Anthracis and Bacillus Thuringiensis Spores

    Science.gov (United States)

    2008-03-01

    furnace. A silicon nitride base provided a uniformly heated surface which ensured a uniform temperature exposure for the entire platform surface ...holding spores was wet chemical etching. This procedure entailed several steps in order to prepare the glass surface to be etched. Cleanliness of the...inspected by light microscopy at multiple intervals for surface cleanliness . 40 Figure 17. 400x magnification of Cover slip after the surface has

  11. Influence of porous silicon formation on the performance of multi-crystalline silicon solar cells

    Indian Academy of Sciences (India)

    M Saad; M Naddaf

    2015-06-01

    The effect of formation of porous silicon on the performance of multi-crystalline silicon (mc-Si) solar cells is presented. Surface treatment of mc-Si solar cells was performed by electrochemical etching in HF-based solution. The effect of etching is viewed through scanning electron microscope (SEM) photographs that indicated the formation of a porous layer on the surface. Total reflection spectroscopy measurements on solar cells revealed reduced reflection after etching. In order to demonstrate the effect of this porous layer on the solar cell performance, illumination-dependent – characteristics and spectral response measurements were performed and analysed before and after etching. At all illumination intensities, short-circuit current density and open-circuit voltage values for the etched solar cell were higher than those before etching, whereas fill factor values were lower for the etched cell at high illumination intensities. An interpretation of these findings is presented.

  12. Dental zirconia can be etched by hydrofluoric acid.

    Science.gov (United States)

    Sriamporn, Tool; Thamrongananskul, Niyom; Busabok, Chumphol; Poolthong, Sushit; Uo, Motohiro; Tagami, Junji

    2014-01-01

    The surface morphology and crystal structure change of dental zirconia after hydrofluoric acid (HF) etching were evaluated. Four groups of sintered zirconia specimens were 1) control group, 2) immersion in 9.5%HF at 25°C for 1, 2, 3, or 24 h, 3) immersion in 9.5%HF at 80°C for 1, 3, 5, or 30 min and 4) immersion in 48%HF at 25°C for 30 or 60 min. The specimens were evaluated under SEM and XRD. The SEM analysis revealed changes in surface topography for all the HF-etched zirconia specimens. The irregularities surface increased with increasingly longer immersion times and higher etching solution temperatures. The XRD analysis of the HFetched zirconia specimens revealed the presence of a crystalline monoclinic phase along with a tetragonal form. It was concluded HF can etch dental zirconia ceramic, creating micro-morphological changes. Tetragonal-to-monoclinic phase transformation was induced on the etched zirconia surface.

  13. A novel restricted-flow etching method for glass

    Institute of Scientific and Technical Information of China (English)

    Hai-bo XIE; Yi ZHENG; Yu-run FAN; Xin FU; Hua-yong YANG

    2009-01-01

    This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed, in addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment.

  14. Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

    Science.gov (United States)

    Nguyen, Hung D.

    1999-01-01

    Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

  15. Fabrication of superhydrophobic and oleophobic Al surfaces by chemical etching and surface fluorination

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hak-Jong; Shin, Ju-Hyeon; Choo, Soyoung; Ryu, Sang-Woo; Kim, Yang-Doo; Lee, Heon, E-mail: heonlee@korea.ac.kr

    2015-06-30

    Hierarchical Al surfaces were fabricated using three different kinds of alkaline-based chemical etching processes. The surface morphology changes to a needle-like microstructure or to nanoscale flakes on a microscale porous structure depending on the chemical solution used. These surfaces were characterized by field-emission scanning electron microscopy, X-ray diffraction analysis, X-ray photoelectron spectroscopy, and contact angle measurements. After the hydrophobic treatment, the etched Al surface shows non-wetting properties, exhibiting a static contact angle over 150° and a dynamic contact angle less than 5° for deionized water. Oleophobic properties for diiodomethane and N,N-dimethylformamide are exhibited by all etched Al surfaces. - Highlights: • This research fabricated and analyzed the etched Al surface via a simple wet etching process. • The morphology of Al surface is changed according to the presence of Zn ions. • The wettability of Al surface is controlled by roughness and surface treatment. • Superhydrophobicity and superoleophobicity are achieved on the wet etched Al mesh.

  16. Exposure of Dog Erythrocytes In Vivo to Phenylhydrazine and Monomethylhydrazine: A Freeze-Etch Study of Erythrocyte Damage

    Science.gov (United States)

    1975-03-01

    membrane. These crystalline structures were numerous and varied in size, but were generally larger than Heinz bodies. 18 FIGURE 3. Freeze-etched replica of...appearance of an ordered structure, possibly hemoglobin crystals (Fig. 5). Although these crystalline structures were more numerous and larger than typical

  17. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  18. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops

    Energy Technology Data Exchange (ETDEWEB)

    English, Timothy S., E-mail: englisht@stanford.edu [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Provine, J [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Marshall, Ann F.; Koh, Ai Leen [Stanford Nano Shared Facilities, Stanford University, Stanford, CA 94305 (United States); Kenny, Thomas W. [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2016-07-15

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication. - Highlights: • Parallel thinning of plan-view specimens enables high-throughput microscopy studies. • The support membrane thickness is controlled with sub-nanometer precision. • No physical etching (polishing, dimpling, or ion milling) is required. • Large area and uniformly thin specimens are suitable for Cs-corrected HRTEM. • Wafer-scale integration enables custom specimens for in situ experiments.

  19. Crystalline Confinement

    CERN Document Server

    Banerjee, D; Jiang, F -J; Wiese, U -J

    2013-01-01

    We show that exotic phases arise in generalized lattice gauge theories known as quantum link models in which classical gauge fields are replaced by quantum operators. While these quantum models with discrete variables have a finite-dimensional Hilbert space per link, the continuous gauge symmetry is still exact. An efficient cluster algorithm is used to study these exotic phases. The $(2+1)$-d system is confining at zero temperature with a spontaneously broken translation symmetry. A crystalline phase exhibits confinement via multi-stranded strings between charge-anti-charge pairs. A phase transition between two distinct confined phases is weakly first order and has an emergent spontaneously broken approximate $SO(2)$ global symmetry. The low-energy physics is described by a $(2+1)$-d $\\mathbb{R}P(1)$ effective field theory, perturbed by a dangerously irrelevant $SO(2)$ breaking operator, which prevents the interpretation of the emergent pseudo-Goldstone boson as a dual photon. This model is an ideal candidat...

  20. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  1. Triple-phase boundary and power density enhancement in thin solid oxide fuel cells by controlled etching of the nickel anode.

    Science.gov (United States)

    Ebrahim, Rabi; Yeleuov, Mukhtar; Issova, Ainur; Tokmoldin, Serekbol; Ignatiev, Alex

    2014-01-01

    Fabrication of microporous structures for the anode of a thin film solid oxide fuel cell (SOFC(s)) using controlled etching process has led us to increased power density and increased cell robustness. Micropores were etched in the nickel anode by both wet and electrochemical etching processes. The samples etched electrochemically showed incomplete etching of the nickel leaving linked nickel islands inside the pores. Samples which were wet- etched showed clean pores with no nickel island residues. Moreover, the sample with linked nickel islands in the anode pores showed higher output power density as compared to the sample with clean pores. This enhancement is related to the enlargement of the surface of contact between the fuel-anode-electrolyte (the triple-phase boundary).

  2. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  3. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  4. State of the art etch-and-rinse adhesives

    Science.gov (United States)

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2013-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. PMID:21112620

  5. A fair comparison between ultrathin crystalline-silicon solar cells with either periodic or correlated disorder inverted pyramid textures.

    Science.gov (United States)

    Muller, Jérôme; Herman, Aline; Mayer, Alexandre; Deparis, Olivier

    2015-06-01

    Fabrication of competitive solar cells based on nano-textured ultrathin silicon technology is challenging nowadays. Attention is paid to the optimization of this type of texture, with a lot of simulation and experimental results published in the last few years. While previous studies discussed mainly the local features of the surface texture, we highlight here the importance of their filling fraction. In this work, we focus on a fair comparison between a technologically realizable correlated disorder pattern of inverted nano-pyramids on an ultrathin crystalline-silicon layer, and its periodically patterned counterpart. A fair comparison is made possible by defining an equivalent periodic structure for each hole filling fraction. Moreover, in order to be as realistic as possible, we consider patterns that could be fabricated by standard patterning techniques: hole-mask colloidal lithography, nanoimprint lithography and wet chemical etching. Based on numerical simulations, we show that inverted nano-pyramid patterns with correlated disorder provide typically greater efficiency than their periodic counterparts. However, the hole filling fraction of the etched pattern plays a crucial role and may limit the benefits of the correlated disorder due to experimental restrictions on pattern fabrication.

  6. Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

    Science.gov (United States)

    Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

    2016-11-01

    Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in ~ 1 bar of CO at ~ 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

  7. Silicon Deep Etching Techniques for MEMS Devices

    Institute of Scientific and Technical Information of China (English)

    WU Ying; OU Yi-hong; JIANG Yong-qing; LI Bin

    2003-01-01

    Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F- gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.

  8. Anisotropic etching on Si{1 1 0}: experiment and simulation for the formation of microstructures with convex corners

    Science.gov (United States)

    Pal, Prem; Gosalvez, Miguel A.; Sato, Kazuo; Hida, H.; Xing, Yan

    2014-12-01

    We combine experiment, theory and simulation to design and fabricate 3D structures with protected edges and corners on Si{1 1 0} using anisotropic wet chemical etching in 25 wt% tetramethylammonium hydroxide (TMAH) at 71 °C. In order to protect the convex corners formed by and directions, two methods are considered, namely, corner compensation and two-step etching. The mask design methodology for corner compensation is explained for various microstructures whose edges are aligned along different directions. The detailed geometry of each compensation pattern is shown to depend on the desired etch depth. The two-step wet etching process is explored in order to realize improved sharp convex corners. Using the same etchant concentration and temperature, the second etching is carried out after mask inversion from silicon nitride (Si3N4) to silicon dioxide (SiO2), obtained by local oxidation of silicon (LOCOS) followed by nitride etching. Based on the use of the continuous cellular automaton (CCA), the simulation results for both corner undercutting and two-step etching show that the CCA is suitable for the analysis and prediction of anisotropic etching on Si{1 1 0} wafers.

  9. Cryo-Etched Black Silicon for Use as Optical Black

    Science.gov (United States)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  10. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  11. Selective etching of semicrystalline polymers CF4 gas plasma treatment of poly(ethylene)

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Terlingen, J.G.A.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, Jan

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were

  12. Selective Etching of Semicrystalline Polymers: CF4 Gas Plasma Treatment of Poly(ethylene)

    NARCIS (Netherlands)

    Olde Riekerink, M.B.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, J.

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were st

  13. Nanostructures formed on carbon-based materials with different levels of crystallinity using oxygen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Tae-Jun [Institute for Multidisciplinary Convergence of Matter, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of); Jo, Wonjin; Lee, Heon Ju [Institute for Multidisciplinary Convergence of Matter, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Oh, Kyu Hwan [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of); Moon, Myoung-Woon, E-mail: mwmoon@kist.re.kr [Institute for Multidisciplinary Convergence of Matter, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2015-09-01

    Nanostructure formation was explored for various carbon-based materials, such as diamond, carbon fiber, polyethylene terephthalate and poly (methyl methacrylate), which have different levels of crystallinity, ranging from perfect crystal to polymeric amorphous. After treatment of oxygen plasma glow discharge, the nanostructures on these carbon-based materials were found to evolve via preferential etching due to the co-deposition of metal elements sputtered from the metal cathode plate. Local islands or clusters formed by the metal co-deposition have a low etching rate compared to pristine regions on each material, resulting in anisotropic patterns on the carbon-based materials. This pattern formation mechanism was confirmed by covering the cathode or preventing the co-deposition of metallic sources with a polymeric material. Regardless of the level of crystallinity of the carbon-based materials, no patterns were observed on the surfaces covered with the polymeric material, and the surfaces were uniformly etched. It was found that the materials with low crystallinity had a high etching rate due to low carbon atom density, which thus easily formed high-aspect-ratio nanostructures for the same plasma treatment duration. - Highlight: • Reactive ion etching & metal deposition were occurred in oxygen plasma treatment. • High-aspect-ratio nanostructures can be fabricated on carbon-based materials. • Materials with low crystallinity easily formed high-aspect-ratio nanostructure. • Amount of etching inhibitors affects the pattern formation and configuration.

  14. Improved Josephson Qubits incorporating Crystalline Silicon Dielectrics

    Science.gov (United States)

    Gao, Yuanfeng; Maurer, Leon; Hover, David; Patel, Umeshkumar; McDermott, Robert

    2010-03-01

    Josephson junction phase quibts are a leading candidate for scalable quantum computing in the solid state. Their energy relaxation times are currently limited by microwave loss induced by a high density of two-level state (TLS) defects in the amorphous dielectric films of the circuit. It is expected that the integration of crystalline, defect-free dielectrics into the circuits will yield substantial improvements in qubit energy relaxation times. However, the epitaxial growth of a crystalline dielectric on a metal underlayer is a daunting challenge. Here we describe a novel approach in which the crystalline silicon nanomembrane of a Silicon-on-Insulator (SOI) wafer is used to form the junction shunt capacitor. The SOI wafer is thermocompression bonded to the device wafer. The handle and buried oxide layers of the SOI are then etched away, leaving the crystalline silicon layer for subsequent processing. We discuss device fabrication issues and present microwave transport data on lumped-element superconducting resonators incorporating the crystalline silicon.

  15. Modeled Wet Nitrate Deposition

    Data.gov (United States)

    U.S. Environmental Protection Agency — Modeled data on nitrate wet deposition was obtained from Dr. Jeff Grimm at Penn State Univ. Nitrate wet depostion causes acidification and eutrophication of surface...

  16. Vaginitis test - wet mount

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/003916.htm Vaginitis test - wet mount To use the sharing features on this page, please enable JavaScript. The vaginitis wet mount test is a test to detect ...

  17. Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

    Directory of Open Access Journals (Sweden)

    Atindra Nath Pal

    2015-07-01

    Full Text Available We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

  18. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-12-21

    This report presents the results of work conducted between September 2014 and July 2015 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program.

  19. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    Science.gov (United States)

    Scheeler, Sebastian P.; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-08-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.

  20. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  1. Results from modeling and simulation of chemical downstream etch systems

    Energy Technology Data Exchange (ETDEWEB)

    Meeks, E.; Vosen, S.R.; Shon, J.W.; Larson, R.S.; Fox, C.A.; Buchenauer

    1996-05-01

    This report summarizes modeling work performed at Sandia in support of Chemical Downstream Etch (CDE) benchmark and tool development programs under a Cooperative Research and Development Agreement (CRADA) with SEMATECH. The Chemical Downstream Etch (CDE) Modeling Project supports SEMATECH Joint Development Projects (JDPs) with Matrix Integrated Systems, Applied Materials, and Astex Corporation in the development of new CDE reactors for wafer cleaning and stripping processes. These dry-etch reactors replace wet-etch steps in microelectronics fabrication, enabling compatibility with other process steps and reducing the use of hazardous chemicals. Models were developed at Sandia to simulate the gas flow, chemistry and transport in CDE reactors. These models address the essential components of the CDE system: a microwave source, a transport tube, a showerhead/gas inlet, and a downstream etch chamber. The models have been used in tandem to determine the evolution of reactive species throughout the system, and to make recommendations for process and tool optimization. A significant part of this task has been in the assembly of a reasonable set of chemical rate constants and species data necessary for successful use of the models. Often the kinetic parameters were uncertain or unknown. For this reason, a significant effort was placed on model validation to obtain industry confidence in the model predictions. Data for model validation were obtained from the Sandia Molecular Beam Mass Spectrometry (MBMS) experiments, from the literature, from the CDE Benchmark Project (also part of the Sandia/SEMATECH CRADA), and from the JDP partners. The validated models were used to evaluate process behavior as a function of microwave-source operating parameters, transport-tube geometry, system pressure, and downstream chamber geometry. In addition, quantitative correlations were developed between CDE tool performance and operation set points.

  2. Regenerative Electroless Etching of Silicon.

    Science.gov (United States)

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  3. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  4. Morphological/chemical imaging of demineralized dentin layer in its natural, wet state.

    Science.gov (United States)

    Wang, Yong; Yao, Xiaomei

    2010-05-01

    Measuring the structure, composition or suitability for bonding of the acid-etched dentin substrate, especially in its hydrated state, has been a formidable problem. The purpose of this study was to determine the morphological and structural profiles of the dentin demineralized layer measured in its natural wet state using environmental scanning electron microscopy (ESEM) and micro-Raman imaging. The occlusal 1/3 of the crown was removed from nine extracted, unerupted human third molars. Dentin surfaces were abraded with 600-grit SiC sandpaper under water to create smear layers. The prepared dentin surfaces were randomly selected for treatment with the self-etching agent (Adper Prompt L-Pop) or the total-etching agent 35% H(3)PO(4) gel (with/without agitation). Micro-Raman spectra and imaging were acquired at 1-1.5microm spatial resolution at positions perpendicular to the treated surfaces; since this technique is non-destructive, the same specimens were also imaged with ESEM. Specimens were kept wet throughout spectral acquisition and ESEM observations. ESEM could be used to reveal demineralized layers in acid-etched dentin, but the resolution was low and no collagen fibrils were disclosed. The detailed chemical maps/profiles of demineralized dentin layers under wet conditions could be obtained using Raman imaging. It was shown that the mineral existed in the superficial layer of all etched dentin covered with smear layers. The mineral was much easier to be removed underneath the superficial layer. The depth, degree, and profile of dentin demineralization were dependent on the types of acids (self-etching vs. total etching) and application procedures (with vs. without agitation). Most current adhesives are applied using wet bonding techniques in which the dentin is kept fully hydrated throughout the bonding. Our ability to fully characterize the hydrated, etched dentin substrates is very important for understanding bonding under in vivo conditions. 2010 Academy of

  5. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-04

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  6. The Effect of HF/NH4F Etching on the Morphology of Surface Fractures on Fused Silica

    Energy Technology Data Exchange (ETDEWEB)

    Wong, L; Suratwala, T; Feit, M D; Miller, P E; Steele, R A

    2008-04-03

    The effects of HF/NH{sub 4}F, wet chemical etching on the morphology of individual surface fractures (indentations, scratches) and of an ensemble of surface fractures (ground surfaces) on fused silica glass has been characterized. For the individual surface fractures, a series of static or dynamic (sliding) Vickers and Brinnell indenters were used to create radial, lateral, Hertzian cone and trailing indentation fractures on a set of polished fused silica substrates which were subsequently etched. After short etch times, the visibility of both surface and subsurface cracks is significantly enhanced when observed by optical microscopy. This is attributed to the removal of the polishing-induced Bielby layer and the increased width of the cracks following etching allowing for greater optical scatter at the fracture interface. The removal of material during etching was found to be isotropic except in areas where the etchant has difficulty penetrating or in areas that exhibit significant plastic deformation/densification. Isolated fractures continue to etch, but will never be completely removed since the bottom and top of the crack both etch at the same rate. The etching behavior of ensembles of closely spaced cracks, such as those produced during grinding, has also been characterized. This was done using a second set of fused silica samples that were ground using either fixed or loose abrasives. The resulting samples were etched and both the etch rate and the morphology of the surfaces were monitored as a function of time. Etching results in the formation of a series of open cracks or cusps, each corresponding to the individual fractures originally on the surface of the substrate. During extended etching, the individual cusps coalesce with one another, providing a means of reducing the depth of subsurface damage and the peak-to-valley roughness. In addition, the material removal rate of the ground surfaces was found to scale with the surface area of the cracks as a

  7. Modified TMAH based etchant for improved etching characteristics on Si{1 0 0} wafer

    Science.gov (United States)

    Swarnalatha, V.; Narasimha Rao, A. V.; Ashok, A.; Singh, S. S.; Pal, P.

    2017-08-01

    Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (R a), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.

  8. Dentinal tubules driven wetting of dentin: Cassie-Baxter modelling

    Science.gov (United States)

    Ramos, S. M. M.; Alderete, L.; Farge, P.

    2009-10-01

    We investigate the wetting properties of dentin surfaces submitted to a phosphoric acid etching followed by an air drying procedure, as in clinical situations of adhesive dentistry. The surface topography of the etched surfaces was characterized by AFM, and the wetting properties of water on these rough and heterogeneous surfaces were studied, by contact angle measurements. We showed that the contact angle increases with the acid exposure time and consequently with both surface roughness and the organic-mineral ratio of the dentin components. From the whole results, obtained on dentin and also on synthesized hydroxyapatites samples, we inferred a water contact angle of ˜ 133° on the dentinal tubule. These experimental results may be described by the Cassie-Baxter approach, and it is suggested that small air pockets could be formed inside the dentinal tubules.

  9. Plasma Etching Improves Solar Cells

    Science.gov (United States)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  10. Wet oxidation of quinoline

    DEFF Research Database (Denmark)

    Thomsen, A.B.; Kilen, H.H.

    1998-01-01

    The influence of oxygen pressure (0.4 and 2 MPa). reaction time (30 and 60 min) and temperature (260 and 280 degrees C) on the wet oxidation of quinoline has been studied. The dominant parameters for the decomposition of quinoline were oxygen pressure and reaction temperature. whereas the reaction...... time was less important within the range studied. Nitrifying bacteria were used to measure the inhibition from wet oxidative-treated samples to study the effect of the (wet oxidation) reaction conditions. Wet oxidation made quinoline more toxic to Nitrosomonas. This was observed for Nitrobacter as well....... The combined wet oxidation and biological treatment of reaction products resulted in 91% oxidation of the parent compound to CO2 and water. Following combined wet oxidation and biological treatment the sample showed low toxicity towards Nitrosomonas and no toxicity towards Nitrobacter. (C) 1998 Elsevier...

  11. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  12. Effect of ethanol-wet-bonding technique on resin–enamel bonds

    Directory of Open Access Journals (Sweden)

    Muhammet Kerim Ayar

    2014-03-01

    Conclusion: The ethanol-wet-bonding technique may increase the bond strength of commercial adhesives to enamel. The chemical composition of the adhesives can affect the bond strength of adhesives when bonding to acid-etched enamel, using the ethanol-wet-bonding technique. Some adhesive systems used in the present study may simultaneously be applied to enamel and dentin using ethanol-wet-bonding. Furthermore, deploying ethanol-wet-bonding for the tested commercial adhesives to enamel can increase the adhesion abilities of these adhesives to enamel.

  13. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  14. Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

    Science.gov (United States)

    Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

    2014-07-14

    We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

  15. Single-crystalline nanoporous Nb2O5 nanotubes

    Directory of Open Access Journals (Sweden)

    Liu Jun

    2011-01-01

    Full Text Available Abstract Single-crystalline nanoporous Nb2O5 nanotubes were fabricated by a two-step solution route, the growth of uniform single-crystalline Nb2O5 nanorods and the following ion-assisted selective dissolution along the [001] direction. Nb2O5 tubular structure was created by preferentially etching (001 crystallographic planes, which has a nearly homogeneous diameter and length. Dense nanopores with the diameters of several nanometers were created on the shell of Nb2O5 tubular structures, which can also retain the crystallographic orientation of Nb2O5 precursor nanorods. The present chemical etching strategy is versatile and can be extended to different-sized nanorod precursors. Furthermore, these as-obtained nanorod precursors and nanotube products can also be used as template for the fabrication of 1 D nanostructured niobates, such as LiNbO3, NaNbO3, and KNbO3.

  16. Preparation and specific properties of single crystalline metallic nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hassel, Achim Walter; Milenkovic, Srdjan [Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf (Germany); Institute for Chemical Technology of Inorganic Materials, Johannes Kepler University, Linz (Austria); Bello-Rodriguez, Belen; Smith, Andrew Jonathan; Chen, Ying [Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf (Germany)

    2010-10-15

    Directional solidification of eutectics is a route to produce iso-oriented metallic single crystalline nanowires (NWs). Etching or electrochemical oxidation allows selective dissolution of either of the phases to produce NW arrays, isolated NWs, nanopore arrays and also derived structures by combining various process steps. A good understanding of the thermodynamics and the kinetics of the phase transformation and chemical reactions including electrodissolution, passivation, selective etching, complexing of reaction products and electrodeposition in the systems NiAl-X (X=Re, W, Mo), Ag-Cu and Fe-Au was reached. Functional devices based on these NWs, like high aspect ratio NW based STM tips, nanoelectromechanical systems (NEMS), NW pH sensors and sensor arrays were constructed. Array of rhenium single crystalline NWs embedded in the NiAl matrix after partial dissolution of the matrix. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology.

  18. Void-Free Direct Bonding of CMUT Arrays with Single Crystalline Plates and Pull- In Insulation

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Dahl Johnsen, Mathias

    2013-01-01

    anisotropically plasma etched cavities after the second oxidation. It is demonstrated that the protrusions will prevent good wafer bonding without subsequent polishing or etching steps. A new fabrication process is therefore proposed, allowing protrusionfree bonding surfaces with no alteration of the final......, and a proposed analytical model, which is in good agreement with the simulated results. The results demonstrate protrusion heights in the order of 10 nm to 40 nm, with higher oxidation temperatures giving the highest protrusions. Isotropically wet etched cavities exhibit significantly smaller protrusions than...

  19. Characterization of sputtered ZnO films under different sputter-etching time of substrate

    Institute of Scientific and Technical Information of China (English)

    LI Cui-ping; YANG Bao-he; QIAN Li-rong; XU Sheng; DAI Wei; LI Ming-ji; LI Xiao-wei; GAO Cheng-yao

    2011-01-01

    Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputteretched for different time.Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease,as the sputteretching time of the substrate increases.More Zn atoms are bound to O atoms in the films,and the defect concentration is decreased with increasing sputter-etching time of substrate.Meanwhile,the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate.The Raman peaks at 99 cm-1,438 cm-1 and 589 cm-1 are identified as E2(low),E2(high) and E1(LO) modes,respectively,and the position of E1(LO) peak blue shifts at longer sputter-etching time.The transmittances of the films,which are deposited on the substrate and etched for 10 min and 20 min,are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min.The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.

  20. WetVegEurope

    NARCIS (Netherlands)

    Landucci, Flavia; Řezníčková, Marcela; Šumberová, Kateřina; Hennekens, S.M.; Schaminée, J.H.J.

    2015-01-01

    WetVegEurope is a research project (http://www.sci.muni.cz/botany/vegsci/wetveg) whose goal is to provide a synthesized formalized classification of the aquatic and marsh vegetation across Europe at the level of phytosociological associations. In order to achieve the project objective, a WetVegEu

  1. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-06

    This report presents the results of work conducted between September 2015 and July 2016 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program. Los Alamos focused on two main activities during this period: Discrete fracture network (DFN) modeling to describe flow and radionuclide transport in complex fracture networks that are typical of crystalline rock environments, and a comprehensive interpretation of three different colloid-facilitated radionuclide transport experiments conducted in a fractured granodiorite at the Grimsel Test Site in Switzerland between 2002 and 2013. Chapter 1 presents the results of the DFN work and is divided into three main sections: (1) we show results of our recent study on the correlation between fracture size and fracture transmissivity (2) we present an analysis and visualization prototype using the concept of a flow topology graph for characterization of discrete fracture networks, and (3) we describe the Crystalline International work in support of the Swedish Task Force. Chapter 2 presents interpretation of the colloidfacilitated radionuclide transport experiments in the crystalline rock at the Grimsel Test Site.

  2. IMMEDIATE HUMAN PULP RESPONSE TO ETHANOL-WET BONDING TECHNIQUE

    Science.gov (United States)

    Scheffel, Débora Lopes Salles; Sacono, Nancy Tomoko; Ribeiro, Ana Paula Dias; Soares, Diana Gabriela; Basso, Fernanda Gonçalves; Pashley, David Henry; Costa, Carlos Alberto de Souza; Hebling, Josimeri

    2016-01-01

    Objective To evaluate the short-term response of human pulps to ethanol-wet bonding technique associated with an etch-and-rinse adhesive system. Methods Deep class V cavities were prepared on the buccal surface of 17 sound premolars scheduled for extraction for orthodontics. The teeth were assigned into three groups: Ethanol-wet bonding (G1), water-wet bonding (G2) and calcium hydroxide (G3, control). Two teeth were used as intact control. After acid-etching, the cavities from G1 were filled with 100% ethanol for 60s and blot-dried before the application of Single Bond 2. In G2, the cavities were filled with distilled water for 60s previously to adhesive application and in G3, the cavity floor was lined with calcium hydroxide before etching and bonding. All cavities were restored with resin composite. The teeth were extracted 48h after the clinical procedures. From each tooth 6 μm-thick serial sections were obtained and stained with hematoxylin and eosin (H/E) and Masson's trichrome. Bacteria microleakage was assessed using Brown & Brenn. All sections were blindly evaluated and scored for five histological features. Results Mean remaining dentin thickness was 463±65μm (G1); 425±184μm (G2); and 348±194μm (G3). Similar pulp reactions followed ethanol- or water-wet bonding techniques. Slight inflammatory responses and disruption of the odontoblast layer related to the cavity floor were seen in all groups. Stained bacteria were not detected in any cavities. Normal pulp tissue was observed in G3 except for one case. Conclusions After 48 h, ethanol-wet bonding technique applied on deep cavities prepared in vital teeth does not increase pulpal damage compared to water-wet bonding technique. Clinical significance Ethanol-wet bonding has been considered an experimental technique that may increase resin-dentin bond durability. This study reported the in vivo response of human pulp tissue when 100% ethanol was applied previously to an etch-and-rinse simplified adhesive

  3. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  4. Crystalline Silica Primer

    Science.gov (United States)

    ,

    1992-01-01

    Crystalline silica is the scientific name for a group of minerals composed of silicon and oxygen. The term crystalline refers to the fact that the oxygen and silicon atoms are arranged in a threedimensional repeating pattern. This group of minerals has shaped human history since the beginning of civilization. From the sand used for making glass to the piezoelectric quartz crystals used in advanced communication systems, crystalline silica has been a part of our technological development. Crystalline silica's pervasiveness in our technology is matched only by its abundance in nature. It's found in samples from every geologic era and from every location around the globe. Scientists have known for decades that prolonged and excessive exposure to crystalline silica dust in mining environments can cause silicosis, a noncancerous lung disease. During the 1980's, studies were conducted that suggested that crystalline silica also was a carcinogen. As a result of these findings, crystalline silica has been regulated under the Occupational Safety and Health Administration's (OSHA) Hazard Communication Standard (HCS). Under HCS, OSHAregulated businesses that use materials containing 0.1% or more crystalline silica must follow Federal guidelines concerning hazard communication and worker training. Although the HCS does not require that samples be analyzed for crystalline silica, mineral suppliers or OSHAregulated

  5. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  6. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching.

    Science.gov (United States)

    Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

    2017-02-10

    In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  7. Wetting Transition in Water

    Science.gov (United States)

    Friedman, S. R.; Khalil, M.; Taborek, P.

    2013-11-01

    Optical images were used to study the wetting behavior of water on graphite, sapphire, and quartz along the liquid vapor coexistence curve from room temperature to 300°C. Wetting transitions were identified by the temperature at which the contact angle decreased to zero and also by the disappearance of dropwise condensation. These two methods yielded consistent values for the wetting temperatures, which were 185°C, 234°C, and 271°C for water on quartz, sapphire, and graphite, respectively. We compare our results with the theoretical predictions based on a simplified model of the water-substrate potential and sharp interfaces.

  8. Crystalline boron nitride aerogels

    Science.gov (United States)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  9. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  10. Nanopores in track-etched polymer membranes characterized by small-angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Cornelius, T W; Schiedt, B; Severin, D; Trautmann, C [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Pepy, G [Institute for Solid State Physics, SzFKI, POB 49, H-1525 Budapest (Hungary); Toulemonde, M [Center of Research on Ions Materials and Photonics (CIMAP), CEA, CNRS, ENSICAEN, University of Caen, BP 5133, Bd H Becquerel, 14070 Caen Cedex 5 (France); Apel, P Yu [Joint Institute for Nuclear Research, Joliot-Curie Street 6, Dubna (Russian Federation); Boesecke, P, E-mail: thomas.cornelius@esrf.fr [European Synchrotron Radiation Facility (ESRF), BP 220, 38043 Grenoble Cedex (France)

    2010-04-16

    Nanochannels and nanowires with diameters ranging from 30 to 400 nm were produced by etching ion tracks in thin polyarylate and polycarbonate foils. The shape and the size distribution of dry and wet nanochannels, as well as of nanowires grown therein, were examined by small-angle x-ray scattering. The x-ray intensity as a function of the scattering vector exhibits pronounced oscillations showing that both the channels and the wires have a highly cylindrical geometry and a very narrow size distribution. UV exposure before chemical etching significantly improves the monodispersity of the nanopores. For fixed etching conditions, the scattering patterns provide evidence that the diameter of dry and water-filled channels as well as for embedded nanowires are identical, demonstrating that the pores in the polymer are completely filled.

  11. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Directory of Open Access Journals (Sweden)

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  12. Adsorption and wetting.

    NARCIS (Netherlands)

    Schlangen, L.J.M.

    1995-01-01

    Adsorption and wetting are related phenomena. In order to improve knowledge of both and their relations, experiments, thermodynamics and a theoretical interpretation have been connected, starring n-alkanes.Starting from the Gibbs adsorption equation thermodynamic relations between vapour adsorption

  13. SF6 plasma etching of silicon nanocrystals.

    Science.gov (United States)

    Liptak, R W; Devetter, B; Thomas, J H; Kortshagen, U; Campbell, S A

    2009-01-21

    An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.

  14. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  15. Wet hydrate dissolution plant

    OpenAIRE

    Stanković Mirjana S.; Kovačević Branimir T.; Pezo Lato L.

    2003-01-01

    The IGPC Engineering Department designed basic projects for a wet hydrate dissolution plant, using technology developed in the IGPC laboratories. Several projects were completed: technological, machine, electrical, automation. On the basis of these projects, a production plant with capacity of 50,000 t/y was manufactured, at "Zeolite Mira", Mira (VE), Italy, in 1997, for increasing detergent zeolite production from 50,000 to 100,000 t/y. Several goals were realized by designing a wet hydrate ...

  16. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  17. Etching.

    Science.gov (United States)

    1980-09-01

    4U c Z . CC 0.0 V 0-01w.0 OCMCC.Ca 0 II 4- 00 La-1 e - .- 0 04’ . £0 tO4 -u 41 ’ Dato C 5-4-00LLi1 c-1 C- - E-1 4-C0 V) -OU1 I~ rC ŔE 0 *z 0 LW 04 c...Z&.. 4.-c o x *C L )P0 A0 0 a54. U * 0 3 i;- L )I.. l C C -44.0 0 2 o; c 0. ama a- .u OE Voz 0 UL 0f ja - .a r DC L _j4 5c .,R r- C *.-* 0 - )W- . 0

  18. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

    Science.gov (United States)

    Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

    2017-10-01

    Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

  19. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  20. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  1. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  2. Reactive Liftoff of Crystalline Cellulose Particles

    Science.gov (United States)

    Teixeira, Andrew R.; Krumm, Christoph; Vinter, Katherine P.; Paulsen, Alex D.; Zhu, Cheng; Maduskar, Saurabh; Joseph, Kristeen E.; Greco, Katharine; Stelatto, Michael; Davis, Eric; Vincent, Brendon; Hermann, Richard; Suszynski, Wieslaw; Schmidt, Lanny D.; Fan, Wei; Rothstein, Jonathan P.; Dauenhauer, Paul J.

    2015-06-01

    The condition of heat transfer to lignocellulosic biomass particles during thermal processing at high temperature (>400 °C) dramatically alters the yield and quality of renewable energy and fuels. In this work, crystalline cellulose particles were discovered to lift off heated surfaces by high speed photography similar to the Leidenfrost effect in hot, volatile liquids. Order of magnitude variation in heat transfer rates and cellulose particle lifetimes was observed as intermediate liquid cellulose droplets transitioned from low temperature wetting (500-600 °C) to fully de-wetted, skittering droplets on polished surfaces (>700 °C). Introduction of macroporosity to the heated surface was shown to completely inhibit the cellulose Leidenfrost effect, providing a tunable design parameter to control particle heat transfer rates in industrial biomass reactors.

  3. Reactive Liftoff of Crystalline Cellulose Particles.

    Science.gov (United States)

    Teixeira, Andrew R; Krumm, Christoph; Vinter, Katherine P; Paulsen, Alex D; Zhu, Cheng; Maduskar, Saurabh; Joseph, Kristeen E; Greco, Katharine; Stelatto, Michael; Davis, Eric; Vincent, Brendon; Hermann, Richard; Suszynski, Wieslaw; Schmidt, Lanny D; Fan, Wei; Rothstein, Jonathan P; Dauenhauer, Paul J

    2015-06-09

    The condition of heat transfer to lignocellulosic biomass particles during thermal processing at high temperature (>400 °C) dramatically alters the yield and quality of renewable energy and fuels. In this work, crystalline cellulose particles were discovered to lift off heated surfaces by high speed photography similar to the Leidenfrost effect in hot, volatile liquids. Order of magnitude variation in heat transfer rates and cellulose particle lifetimes was observed as intermediate liquid cellulose droplets transitioned from low temperature wetting (500-600 °C) to fully de-wetted, skittering droplets on polished surfaces (>700 °C). Introduction of macroporosity to the heated surface was shown to completely inhibit the cellulose Leidenfrost effect, providing a tunable design parameter to control particle heat transfer rates in industrial biomass reactors.

  4. (Preoxidation cleaning optimization for crystalline silicon)

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    A series of controlled experiments has been performed in Sandia's Photovoltaic Device Fabrication Laboratory to evaluate the effect of various chemical surface treatments on the recombination lifetime of crystalline silicon wafers subjected to a high-temperature dry oxidation. From this series of experiments we have deduced a relatively simple yet effective cleaning sequence. We have also evaluated the effect of different chemical damage-removal etches for improving the recombination lifetime and surface smoothness of mechanically lapped wafers. This paper presents the methodology used, the experimental results obtained, and our experience with using this process on a continuing basis over a period of many months. 7 refs., 4 figs., 1 tab.

  5. Grain boundary wetness of partially molten dunite

    Science.gov (United States)

    Mu, S.; Faul, U.

    2013-12-01

    The grain scale melt distribution plays a key role for physical properties of partially molten regions in Earth's upper mantle, but our current understanding of the distribution of basaltic melt at the grain scale is still incomplete. A recent experimental study shows that wetted two-grain boundaries are a common feature of partially molten dunite at small melt fractions (Garapic et al., G3, 2013). In early ideal models which assume isotropic surface energy, the grain scale melt distribution is uniquely determined by knowing the melt fraction and the dihedral angle between two crystalline grains and the melt (von Bargen and Waff, JGR, 1986). Olivine is anisotropic in surface energy, hence the grain scale melt distribution at given melt fraction cannot be characterized by the dihedral angle alone. The grain boundary wetness, which is defined as the ratio of solid-liquid boundary area over the total interfacial area (Takei, JGR, 1998), is a more objective measure of the grain scale melt distribution. The aim of this study is to quantify the relationship between grain size, melt fraction, temperature and grain boundary wetness of partially molten dunite under dry conditions. We annealed olivine-basalt aggregates with melt fractions from 0.03% to 6% at a range of temperatures and 1 GPa in a piston cylinder for 1 to 336 hours, with resulting mean grain sizes of 10 to 60 μm. The samples were sectioned, polished and imaged at high resolution by using a field emission SEM. Each image had a size of 2048 x 1536 pixels with a resolution of 0.014 to 0.029 μm/pixel, depending on magnification. For each sample, depending on grain sizes, we made mosaics of 3 x 3 or 6 x 6 overlapping images. Measurements of melt fraction, grain boundary wetness and grain size were carried out on these high resolution mosaics by using ImageJ software. Analyses of mosaics show that grain boundary wetness increases with increasing melt fraction at constant grain size to values well above those

  6. Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport

    Energy Technology Data Exchange (ETDEWEB)

    Trigubo, A B; Di Stefano, M C [FRBA-UTN, (1179) Buenos Aires (Argentina); Aguirre, M H [Dpto de Quim Inorg, Fac de Cs Quim, Univ Complutense, (28040) Madrid (Spain); Martinez, A M; D' Elia, R; Canepa, H; Heredia, E, E-mail: atrigubo@citefa.gov.a [CINSO-CITEFA: (1603) Villa Martelli, Pcia de Buenos Aires (Argentina)

    2009-05-01

    Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSe ingots using respectively physical and chemical transport methods. Different temperature profiles and growth rates were analyzed in order to optimize the necessary crystalline quality for device development. Optical and scanning electron micrographs of the corrosion figures produced by chemical etching were used to obtain the dislocation density and the misorientation between adjacent subgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material was determined by transmission electronic microscopy. Optical transmittance was measured by infrared transmission spectrometry and the resulting values were compared to commercial samples.

  7. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    OpenAIRE

    SABATINI, Camila

    2013-01-01

    Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned t...

  8. Anisotropic textured silicon obtained by stain-etching at low etching rates

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-DIaz, B [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Marrero, N [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-RodrIguez, C [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Ben-Hander, F A [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain); MartInez-Duart, J M [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-02-21

    The structure, luminescence and etching kinetics for porous silicon stain-etched at different temperatures are studied. The results reveal that for temperatures below 10 deg. C and for short etching times, a novel anisotropic structure based on surface roughness preferentially oriented in the (100) direction is observed. At temperatures higher than 10 deg. C or large etching times, typical macropores and mesopores with non-preferential pore wall orientation are detected. The luminescence spectra of the samples with preferential surface roughness orientation are red-shifted with respect to the samples with typical isotropic orientation. The results are interpreted in terms of average etching rates and pore growth.

  9. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  10. Wet storage integrity update

    Energy Technology Data Exchange (ETDEWEB)

    Bailey, W.J.; Johnson, A.B. Jr.

    1983-09-01

    This report includes information from various studies performed under the Wet Storage Task of the Spent Fuel Integrity Project of the Commercial Spent Fuel Management (CSFM) Program at Pacific Northwest Laboratory. An overview of recent developments in the technology of wet storage of spent water reactor fuel is presented. Licensee Event Reports pertaining to spent fuel pools and the associated performance of spent fuel and storage components during wet storage are discussed. The current status of fuel that was examined under the CSFM Program is described. Assessments of the effect of boric acid in spent fuel pool water on the corrosion and stress corrosion cracking of stainless steel and the stress corrosion cracking of stainless steel piping containing stagnant water at spent fuel pools are discussed. A list of pertinent publications is included. 84 references, 21 figures, 11 tables.

  11. Wrinkling of wet paper

    Science.gov (United States)

    Kim, Ho-Young; Kim, Jungchul; Mahadevan, L.

    2011-11-01

    It is a mundane experience that paper stained with water wrinkles. It is because a wetted portion of paper, which swells due to the hygroexpansive nature of the cellulose fiber network, deforms out of its original plane. Here we quantify the dynamics of wrinkling of wet paper coupled to the capillary imbibition of water into paper using a combination of experiment and theory. While supplying water from a capillary tube that touches the center of a paper strip, we measure the spreading rate of the wet area, wait time for the out-of-plane buckling, and temporal growth of a wrinkling magnitude. Using a theoretical model assuming a linear increase of the strain and an exponential decay of the elastic modulus with the water concentration, we construct scaling laws to predict the simultaneous capillary imbibition and wrinkling rates. This work was supported by the Wyss Institute of Harvard University.

  12. Note: electrochemical etching of sharp iridium tips.

    Science.gov (United States)

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  13. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  14. Applications of total-etch adhesive bonding.

    Science.gov (United States)

    Strassler, Howard E

    2003-06-01

    The concept of total-etch adhesion for enamel and dentin is well accepted. Although new techniques with self-etching adhesives have been introduced, there needs to be more reported clinical trials before making a complete switch to these systems. Currently, the only adhesive systems with long-term data to support confidence and success with their clinical use are total-etch systems. Applications for using a total-etch adhesive bonding technique include sealants, orthodontic brackets, anterior composite resins, posterior composite resins, bonded dental silver amalgam, resin cementation with posts, all-metal, porcelain-metal, composite resin, and ceramic restorations, splinting, core foundations, and conservative treatment of the worn dentition. This article will review the concepts for clinical success with total-etch adhesion for a wide range of clinical applications.

  15. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  16. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Directory of Open Access Journals (Sweden)

    Sabine Geerts

    2012-01-01

    interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1 and 2-step (ADSE Self-Etch adhesives.

  17. The human crystallin gene families

    Directory of Open Access Journals (Sweden)

    Wistow Graeme

    2012-12-01

    Full Text Available Abstract Crystallins are the abundant, long-lived proteins of the eye lens. The major human crystallins belong to two different superfamilies: the small heat-shock proteins (α-crystallins and the βγ-crystallins. During evolution, other proteins have sometimes been recruited as crystallins to modify the properties of the lens. In the developing human lens, the enzyme betaine-homocysteine methyltransferase serves such a role. Evolutionary modification has also resulted in loss of expression of some human crystallin genes or of specific splice forms. Crystallin organization is essential for lens transparency and mutations; even minor changes to surface residues can cause cataract and loss of vision.

  18. Wetting of real surfaces

    CERN Document Server

    Bormashenko, Edward Yu

    2013-01-01

    The problem of wetting and drop dynamics on various surfaces is very interesting from both the scientificas well as thepractical viewpoint, and subject of intense research.The results are scattered across papers in journals, sothis workwill meet the need for a unifying, comprehensive work.

  19. Wet Macular Degeneration

    Science.gov (United States)

    ... macular degeneration Overview By Mayo Clinic Staff Wet macular degeneration is a chronic eye disease that causes blurred vision or a blind spot in your visual field. It's generally caused by abnormal blood vessels that leak fluid or blood into ... macular degeneration is one of two types of age-related ...

  20. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin

    Directory of Open Access Journals (Sweden)

    Leandro Afonso Guimarães

    2012-04-01

    Full Text Available This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5. The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT or absolute ethanol wet-bonding (EBT. The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB. Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min. Data were analyzed by two-way ANOVA and Tukey's test (a = 5%. The failure modes were verified using a stereomicroscope (40'. For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05. The highest bond strength was observed for SB, regardless of the bonding technique (p < 0.05. No significant interaction between adhesives and bonding techniques was noticed (p = 0.597. There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  1. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

    Science.gov (United States)

    Qian, H.; Lee, K. B.; Vajargah, S. Hosseini; Novikov, S. V.; Guiney, I.; Zaidi, Z. H.; Jiang, S.; Wallis, D. J.; Foxon, C. T.; Humphreys, C. J.; Houston, P. A.

    2017-02-01

    A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.

  2. Catalytic behavior of metallic particles in anisotropic etching of Ge(100) surfaces in water mediated by dissolved oxygen

    Science.gov (United States)

    Kawase, Tatsuya; Mura, Atsushi; Nishitani, Keisuke; Kawai, Yoshie; Kawai, Kentaro; Uchikoshi, Junichi; Morita, Mizuho; Arima, Kenta

    2012-06-01

    The authors demonstrate that Ge(100) surfaces containing metallic particles are etched anisotropically in water. This originates from the catalytic reduction of dissolved oxygen (O2) in water to water molecules (H2O) on the metallic particles, which is followed by the enhanced oxidation of Ge around the particles. The soluble nature of Ge oxide (GeO2) in water promotes the formation of inverted pyramidal etch pits composed of (111) microfacets. On the basis of the results, the authors propose strategies for avoiding unwanted surface roughening during the wet cleaning of Ge.

  3. Thermodynamics of Crystalline States

    CERN Document Server

    Fujimoto, Minoru

    2010-01-01

    Thermodynamics is a well-established discipline of physics for properties of matter in thermal equilibrium surroundings. Applying to crystals, however, the laws encounter undefined properties of crystal lattices, which therefore need to be determined for a clear and well-defined description of crystalline states. Thermodynamics of Crystalline States explores the roles played by order variables and dynamic lattices in crystals in a wholly new way. This book is divided into three parts. The book begins by clarifying basic concepts for stable crystals. Next, binary phase transitions are discussed to study collective motion of order variables, as described mostly as classical phenomena. In the third part, the multi-electron system is discussed theoretically, as a quantum-mechanical example, for the superconducting state in metallic crystals. Throughout the book, the role played by the lattice is emphasized and examined in-depth. Thermodynamics of Crystalline States is an introductory treatise and textbook on meso...

  4. Nanoparticle-based etching of silicon surfaces

    Science.gov (United States)

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  5. Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMS

    Science.gov (United States)

    Singh, Sajal Sagar; Pal, Prem; Pandey, Ashok Kumar; Xing, Yan; Sato, Kazuo

    2016-12-01

    In wet bulk micromachining, the etching characteristics are orientation dependent. As a result, prolonged etching of mask openings of any geometric shape on both Si{100} and Si{110} wafers results in a structure defined by the slowest etching planes. In order to fabricate microstructures with high dimensional accuracy, it is vital to align the mask edges along the crystal directions comprising of these slowest etching planes. Thus, precise alignment of mask edges is important in micro/nano fabrication. As a result, the determination of accurate crystal directions is of utmost importance and is in fact the first step to ensure dimensionally accurate microstructures for improved performance. In this review article, we have presented a comprehensive analysis of different techniques to precisely determine the crystallographic directions. We have covered various techniques proposed in the span of more than two decades to determine the crystallographic directions on both Si{100} and Si{110} wafers. Apart from a detailed discussion of each technique along with their design and implementation, we have provided a critical analysis of the associated constraints, benefits and shortcomings. We have also summed up the critical aspects of each technique and presented in a tabular format for easy reference for readers. This review article comprises of an exhaustive discussion and is a handy reference for researchers who are new in the field of wet anisotropic etching or who want to get abreast with the techniques of determination of crystal directions.

  6. Electroless epitaxial etching for semiconductor applications

    Science.gov (United States)

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  7. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  8. Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples

    Science.gov (United States)

    Gosálvez, M. A.; Pal, Prem; Ferrando, N.; Hida, H.; Sato, K.

    2011-12-01

    This is part I of a series of two papers dedicated to the presentation of a novel, large throughput, experimental procedure to determine the three-dimensional distribution of the etch rate of silicon in a wide range of anisotropic etchants, including a total of 30 different etching conditions in KOH, KOH+IPA, TMAH and TMAH+Triton solutions at various concentrations and temperatures. The method is based on the use of previously reported, vertically micromachined wagon wheels (WWs) (Wind and Hines 2000 Surf. Sci. 460 21-38 Nguyen and Elwenspoek 2007 J. Electrochem. Soc. 154 D684-91), focusing on speeding up the etch rate extraction process for each WW by combining macrophotography and image processing procedures. The proposed procedure positions the WWs as a realistic alternative to the traditional hemispherical specimen. The obtained, extensive etch rate database is used to perform wet etching simulations of advanced systems, showing good agreement with the experimental counterparts. In part II of this series (Gosálvez et al J. Micromech. Microeng. 21 125008), we provide a theoretical analysis of the etched spoke shapes, a detailed comparison to the etch rates from previous studies and a self-consistency study of the measured etch rates against maximum theoretical values derived from the spoke shape analysis.

  9. Localized mechanics of dentin self-etching adhesive system

    Directory of Open Access Journals (Sweden)

    Rodolfo Bruniera Anchieta

    2007-08-01

    Full Text Available The bond strength of composite resins (CRs to dentin is influenced by the interfacial microstructure of the hybrid layer (HL and the resin tags (TAG. The contemporary self-etching primer adhesive systems overcame the inconvenient of the etch-and-rinse protocol. Studies, however, have demonstrated that HL thickness and TAG length vary according to the wetting time and additional use of acid-etching prior to self-etching primers. This study investigated the localized stress distribution in the HL and the dentin/adhesive interface. Two HL thicknesses (3 or 6 µm, two TAG lengths (13 or 17 µm and two loading conditions (perpendicular and oblique-25º were investigated by the finite element (FE analysis. Five two-dimensional FE models (M of a dentin specimen restored with CR (38 x 64 µm were constructed: M1 - no HL and no TAG; M2 - 3 µm of HL and 13 µm of TAG; M3 - 3 µm of HL and 17 µm of TAG; M4 - 6 µm of HL and 13 µm of TAG; and M5 - 6 µm of HL and 17 µm of TAG. Two distributed loadings (L (20N were applied on CR surface: L1 - perpendicular, and L2 - oblique (25º. Fixed interfacial conditions were assigned on the border of the dentin specimen. Ansys 10.0 (Ansys®, Houston, PA, USA software was used to calculate the stress fields. The peak of von Mises (sigmavM and maximum principal stress (sigmamax was higher in L2 than in L1. Microstructures (HL and TAG had no effect on local stresses for L1. Decreasing HL decreased sigmavM and sigmamax in all structures for L2, but the TAG length had influence only on the peributular dentin. The thickness of HL had more influence on the sigmavM and sigmamax than TAG length. The peritubular dentin and its adjacent structures showed the highest sigmavM and sigmamax, mainly in the oblique loading.

  10. WET SOLIDS FLOW ENHANCEMENT

    Energy Technology Data Exchange (ETDEWEB)

    Unknown

    2001-03-25

    The yield locus, tensile strength and fracture mechanisms of wet granular materials were studied. The yield locus of a wet material was shifted to the left of that of the dry specimen by a constant value equal to the compressive isostatic stress due to pendular bridges. for materials with straight yield loci, the shift was computed from the uniaxial tensile strength, either measured in a tensile strength tester or calculated from the correlation, and the angle of internal friction of the material. The predicted shift in the yield loci due to different moisture contents compare well with the measured shift in the yield loci of glass beads, crushed limestone, super D catalyst and Leslie coal. Measurement of the void fraction during the shear testing was critical to obtain the correct tensile strength theoretically or experimentally.

  11. Liquid crystalline dihydroazulene photoswitches

    DEFF Research Database (Denmark)

    Petersen, Anne Ugleholdt; Jevric, Martyn; Mandle, Richard J.

    2015-01-01

    A large selection of photochromic dihydroazulene (DHA) molecules incorporating various substituents at position 2 of the DHA core was prepared and investigated for their ability to form liquid crystalline phases. Incorporation of an octyloxy-substituted biphenyl substituent resulted in nematic...

  12. Writing on wet paper

    Science.gov (United States)

    Fridrich, Jessica; Goljan, Miroslav; Lisonek, Petr; Soukal, David

    2005-03-01

    In this paper, we show that the communication channel known as writing in memory with defective cells is a relevant information-theoretical model for a specific case of passive warden steganography when the sender embeds a secret message into a subset C of the cover object X without sharing the selection channel C with the recipient. The set C could be arbitrary, determined by the sender from the cover object using a deterministic, pseudo-random, or a truly random process. We call this steganography "writing on wet paper" and realize it using low-density random linear codes with the encoding step based on the LT process. The importance of writing on wet paper for covert communication is discussed within the context of adaptive steganography and perturbed quantization steganography. Heuristic arguments supported by tests using blind steganalysis indicate that the wet paper steganography provides improved steganographic security for embedding in JPEG images and is less vulnerable to attacks when compared to existing methods with shared selection channels.

  13. Effects of Dry-Milling and Wet-Milling on Chemical, Physical and Gelatinization Properties of Rice Flour

    Directory of Open Access Journals (Sweden)

    Jitranut Leewatchararongjaroen

    2016-09-01

    Full Text Available Rice flour from nine varieties, subjected to dry- and wet-milling processes, was determined for its physical and chemical properties. The results revealed that milling method had an effect on properties of flour. Wet-milling process resulted in flour with significantly lower protein and ash contents and higher carbohydrate content. Wet-milled flour also tended to have lower lipid content and higher amylose content. In addition, wet-milled rice flour contained granules with smaller average size compared to dry-milled samples. Swelling power at 90 °C of wet-milled samples was higher while solubility was significantly lower than those of dry-milled flour. Dry milling process caused the destruction of the crystalline structure and yielded flour with lower crystallinity compared to wet-milling process, which resulted in significantly lower gelatinization enthalpy.

  14. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  15. Neutron-induced modifications on Hostaphan and Makrofol wettability and etching behaviors

    Science.gov (United States)

    El-Sayed, D.; El-Saftawy, A. A.; Abd El Aal, S. A.; Fayez-Hassan, M.; Al-Abyad, M.; Mansour, N. A.; Seddik, U.

    2017-04-01

    Understanding the nature of polymers used as nuclear detectors is crucial to enhance their behaviors. In this work, the induced modifications in wettability and etching properties of Hostaphan and Makrofol polymers irradiated by different fluences of thermal neutrons are investigated. The wetting properties are studied by contact angle technique which showed the spread out of various liquids over the irradiated polymers surfaces (wettability enhanced). This wetting behavior is attributed to the induced changes in surface free energy (SFE), morphology, roughness, structure, hardness, and chemistry. SFE values are calculated by three different models and found to increase after neutrons irradiation associated with differences depending on the used model. These differences result from the intermolecular interactions in the liquid/polymer system. Surface morphology and roughness of both polymers showed drastic changes after irradiation. Additionally, surface structure and hardness of pristine and irradiated polymers were discussed and correlated to the surface wettability improvements. The changes in surface chemistry are examined by Fourier transform infrared spectroscopy (FTIR), which indicate an increase in surface polarity due to the formation of polar groups. The irradiated polymers etching characteristics and activation energies are discussed as well. Lastly, it is evident that thermal neutrons show efficiency in improving surface wettability and etching properties of Hostaphan and Makrofol in a controlled way.

  16. Freeze fracture and freeze etching.

    Science.gov (United States)

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  17. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  18. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  19. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  20. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy this report when it is no longer...dislocation—thus enabling EPD measurement of Hg1-xCdxSe. 15. SUBJECT TERMS Mercury cadmium selenide, etch pits, dislocations, preferential etching...by the US Army Research Laboratory and was accomplished under Cooperative Agreement # W911NF-12-2-0019. vi

  1. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  2. Laser-induced back-side etching with liquid and the solid hydrocarbon absorber films of different thicknesses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Yunxiang, P.; Bayer, L.; Han, B.; Zimmer, K.

    2017-04-01

    Laser-induced backside wet and dry etching (LIBWE and LIBDE) are methods for high-quality surface patterning of transparent dielectrics that making use of an additional absorber material attached to the rear side that is ablated in a confined configuration. Due to the manifold of the involved processes, the mechanism of the etching process and the parameter influence on the material removal process are multifaceted and not fully understood yet. In the present paper, we investigate the influence of the confinement to the backside etching process by studying the impact of the thickness of the attached liquid or solid absorber within a range of 12-125 and 0.2-11.7 μm, respectively. It was found that for the liquid and solid absorbers, the etching rate increases with the thickness of the absorber layer and saturates exceeding a certain value, which depends on the used laser fluence. Moreover, the incubation of etching depends on the absorber thickness. The comparison of the etching results of a similar thickness of the liquid and the solid absorber layers shows that the phase of the absorber (liquid or solid) does not influence the back-side etching process. Time-resolved shadowgraph images of the process indicate that with higher absorber layer thickness, the interaction time and strength of the laser-induced processes at the sample surface increase. The results suggest that confinement of the rear side attached absorber ablation influences the impact of the laser-induced secondary processes to the strength of the material modifications and, therefore, the etching rate.

  3. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applied...... beam etching in a boron trichloride plasma. The etch rates of sapphire in such a plasma can be up to a hundred times faster than rates in ion beam etching. The anisotropy of the etch can be controlled by changing the plasma conditions and fabrication of sloped sidewalls can be achieved. Reactive ion...... etching of polymers can be used for several purposes, such as polymer removal, surface properties alternation, or polymer structuring. For material removal any polymer can be etched in an oxygen plasma, including all the polymers used in this project, which include, SU-8, TOPAS®, PLLA, PCL, and PMMA...

  4. White spot lesions: Does etching really matter?

    Science.gov (United States)

    Abufarwa, Moufida; Voorhees, Robert D; Varanasi, Venu G; Campbell, Phillip M; Buschang, Peter H

    2017-08-01

    The clinical significance of acid etching prior to orthodontic bonding is controversial. In the present study, we evaluated the effect of 15 seconds of acid etching on enamel demineralization. Twenty-seven human molars were sectioned and assigned to two groups. Under standardized conditions, the enamel surfaces were imaged using FluoreCam to obtain baseline data. Group 1 was etched using 37% phosphoric acid for 15 seconds, rinsed with water, and then imaged again; group 2 was only rinsed with water. Water rinse was collected for calcium chemical analysis using inductively-coupled plasma auger electron spectrometry. Both groups were subjected to 9 days of pH cycling, after which final FluoreCam images were obtained. Group 1 showed a significant increase in lesion area (P=.012), decrease in light intensity (P=.009), and decrease in impact (P=.007) after acid etching. The amount of calcium that leached out over the 15 seconds was 14 ppm ±2.4 (0.35 mmol/L±0.06). Following pH cycling, there was no statistically-significant between-group difference in overall enamel demineralization. Initial demineralization caused by 15 seconds of acid etching does not increase enamel susceptibility to further demineralization. This suggests that acid etching does not increase the risk of developing white spot lesions during orthodontics. © 2017 John Wiley & Sons Australia, Ltd.

  5. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  6. Effect of plasma etching on photoluminescence of SnO(x)/Sn nanoparticles deposited on DOPC lipid membrane.

    Science.gov (United States)

    An, Hyeun Hwan; Lee, Seung Jae; Baek, Seung Ha; Han, Won Bae; Kim, Young Ho; Yoon, Chong Seung; Suh, Sang Hee

    2012-02-15

    The photoluminescence characteristic of the SnO(x)/Sn nanoparticles deposited on a solid supported liquid-crystalline phospholipid (1,2-dioleoyl-sn-glycero-3-phosphocholine) membrane was probed after plasma etching the nanoparticle monolayer. It was shown that the plasma etching of the nanoparticle surface greatly altered the particle morphology and enhanced the PL effect, especially when the particle size was below 10 nm in spite of strong presence of surrounding carbon. The enhancement mainly stemmed from the growth of a new PL peak due to the additional defect states produced on the nanoparticle surface by the plasma etching. It was also shown that hydrating the SnO(x)/Sn nanoparticles similarly improved the PL response of the nanoparticles as the hydration produced an additional oxygen-rich oxide layer on the particle surface. Copyright © 2011 Elsevier Inc. All rights reserved.

  7. Complete wetting of Pt(111) by nanoscale liquid water films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yuntao; Dibble, Collin J.; Petrik, Nikolay G.; Smith, R. Scott; Kay, Bruce D.; Kimmel, Gregory A.

    2016-02-04

    The melting and wetting of nanoscale crystalline ice films on Pt(111) that are transiently heated above the melting point using nanosecond laser pulses are studied with infrared refection absorption spectroscopy (IRAS) and Kr temperature programmed desorption (TPD). The as-grown crystalline ice films consist of isolated nanoscale ice crystallites embedded in a hydrophobic water monolayer. Upon heating above the melting point, these ice crystallites rapidly melt to form nanoscale droplets of liquid water. Rapid cooling of the system to cryogenic temperatures after each laser pulse quenches the water films and allows them to be interrogated with IRAS, Kr TPD and other ultrahigh vacuum surface science techniques. With each successive heat pulse, these liquid drops spread across the surface until it is entirely covered with multilayer water films after several pulses. These results, which show that nanoscale water films completely wet Pt(111), are in contrast to molecular dynamics simulations predicting partial wetting of nanoscale water drops on a hydrophobic water monolayer. The results provide valuable new insights into the wetting characteristics of nanoscale water films on a clean, well-characterized single crystal surface.

  8. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-12-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  9. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  10. Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching.

    Science.gov (United States)

    Mendoza-Galván, Arturo; Järrendahl, Kenneth; Arwin, Hans; Huang, Yi-Fan; Chen, Li-Chyong; Chen, Kuei-Hsien

    2009-09-10

    Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns 100-140 nm wide and spaced by about 200 nm. Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and 955 cm(-1), which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and CH(n) species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips.

  11. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    Science.gov (United States)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  12. Crystalline systems. [Book chapter

    Energy Technology Data Exchange (ETDEWEB)

    Kispert, L.D.

    The use of two double resonance methods, electron-nuclear double resonance (ENDOR) and electron-electron double resonance (ELDOR) in the study of free radicals in solids is reviewed. Included are descriptions of how crystalline-phase ENDOR is used to determine small hyperfine splittings, quadrupoly couplings, and reaction mechanisms or radical formation and how crystalline phase ELDOR is used to determine large hyperfine splittings, to identify radicals with large quadrupole moments and to study spin exchange processes. The complementary role played by the ENDOR and ELDOR spectroscopy in the separation of overlapping EPR spectra, in the study of proton-deuterium exchange, in the study of methyl groups undergoing tunneling rotation, and in the determination of the rates of intermolecular motion are dealt with. 13 figures, 1 table. (DP)

  13. Thermodynamics of Crystalline States

    CERN Document Server

    Fujimoto, Minoru

    2013-01-01

    Thermodynamics is a well-established discipline of physics for properties of matter in thermal equilibrium with the surroundings. Applying to crystals, however, the laws encounter undefined properties of crystal lattice, which therefore need to be determined for a clear and well-defined description of crystalline states. Thermodynamics of Crystalline States explores the roles played by order variables and dynamic lattices in crystals in a wholly new way. The book begins by clarifying basic concepts for stable crystals. Next, binary phase transitions are discussed to study collective motion of order variables, as described mostly as classical phenomena. New to this edition is the examination of magnetic crystals, where magnetic symmetry is essential for magnetic phase transitions. The multi-electron system is also discussed  theoretically, as a quantum-mechanical example, for superconductivity in metallic crystals. Throughout the book, the role played by the lattice is emphasized and studied in-depth. Thermod...

  14. Phoenix's Wet Chemistry Lab

    Science.gov (United States)

    2008-01-01

    This is an illustration of the analytical procedure of NASA's Phoenix Mars Lander's Wet Chemistry Lab (WCL) on board the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) instrument. By dissolving small amounts of soil in water, WCL can determine the pH, the abundance of minerals such as magnesium and sodium cations or chloride, bromide and sulfate anions, as well as the conductivity and redox potential. The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  15. Phoenix's Wet Chemistry Lab

    Science.gov (United States)

    2008-01-01

    This is an illustration of soil analysis on NASA's Phoenix Mars Lander's Wet Chemistry Lab (WCL) on board the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) instrument. By dissolving small amounts of soil in water, WCL will attempt to determine the pH, the abundance of minerals such as magnesium and sodium cations or chloride, bromide and sulfate anions, as well as the conductivity and redox potential. The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  16. Wetting in Color

    Science.gov (United States)

    Burgess, Ian Bruce

    Colorimetric litmus tests such as pH paper have enjoyed wide commercial success due to their inexpensive production and exceptional ease of use. However, expansion of colorimetry to new sensing paradigms is challenging because macroscopic color changes are seldom coupled to arbitrary differences in the physical/chemical properties of a system. In this thesis I present in detail the development of Wetting in Color Technology, focusing primarily on its application as an inexpensive and highly selective colorimetric indicator for organic liquids. The technology exploits chemically-encoded inverse-opal photonic crystals to control the infiltration of fluids to liquid-specific spatial patterns, projecting minute differences in liquids' wettability to macroscopically distinct, easy-to-visualize structural color patterns. It is shown experimentally and corroborated with theoretical modeling using percolation theory that the high selectivity of wetting, upon-which the sensitivity of the indicator relies, is caused by the highly symmetric structure of our large-area, defect-free SiO2 inverse-opals. The regular structure also produces a bright iridescent color, which disappears when infiltrated with liquid - naturally coupling the optical and fluidic responses. Surface modification protocols are developed, requiring only silanization and selective oxidation, to facilitate the deterministic design of an indicator that differentiates a broad range of liquids. The resulting tunable, built-in horizontal and vertical chemistry gradients allow the wettability threshold to be tailored to specific liquids across a continuous range, and make the readout rely only on countable color differences. As wetting is a generic fluidic phenomenon, Wetting in Color technology could be suitable for applications in authentication or identification of unknown liquids across a broad range of industries. However, the generic nature of the response also ensures chemical non-specificity. It is shown

  17. A new generation of self-etching adhesives: comparison with traditional acid etch technique.

    Science.gov (United States)

    Holzmeier, Marcus; Schaubmayr, Martin; Dasch, Walter; Hirschfelder, Ursula

    2008-03-01

    The aim of this study was to determine the shear bond strength (SBS), etching pattern and depth, and debonding performance of several market-leading, self-etching (SE) adhesives primarily used in restorative dentistry (iBond, Clearfil S(3) Bond, Clearfil Protect Bond, AdheSE, XenoIII), two experimental self-etching adhesives (exp. Bond 1, exp. Bond 2) and one experimental self-etching cement (SE Zement) used with and without prior phosphoric acid-etching, and to compare them to an orthodontic self-etching product (Transbond Plus SE Primer) and to traditional acid-etch technique (Transbond XT Primer, phosphoric acid) All adhesives were applied on pumiced and embedded bovine incisors following the manufacturers' instructions. Then one bracket each (coated with Transbond XT composite) was bonded (n = 20). Transbond XT was polymerized for 20 s from the incisal and gingival sides using a halogen device positioned at a constant 5 mm from and a 45 degrees angle to the specimen. The specimens were stored in distilled water for 24 h at 37 degrees C before measuring SBS. The ARI (adhesive remnant index) for all specimens was determined from the sheared-off brackets of each. After conditioning, the surface texture was morphologically evaluated from scanning electron microscope (SEM) images, while the etching depth was determined using a confocal laser-scanning microscope (CLSM). All groups were tested for normal distribution and analyzed by applying ANOVA, Kruskal-Wallis or the t test. In addition, a Bonferroni correction was used. The median values of the SBS tests were: SE Zement 3.0 MPa, SE Zement preceded by phosphoric acid etching 11.2 MPa, experimental bond 1: 7.4 MPa, experimental bond 2: 5.6 MPa, iBond 8.1 MPa, Clearfil S(3) Bond 14.1 MPa, Clearfil Protect Bond 16.6 MPa, Clearfil SE Bond 15.9 MPa, AdheSE 16.0 MPa, XenoIII 16.1 MPa, Transbond SE Primer 20.7 MPa, acid-etching+Transbond XT Primer 21.0 MPa. With the exception of iBond, we observed no significant

  18. Synthesis of wirelike silicon nanostructures by dispersion of silicon on insulator using electroless etching

    Science.gov (United States)

    Mantey, Kevin; Shams, Somayeh; Nayfeh, Munir H.; Nayfeh, Osama; Alhoshan, Mansour; Alrokayan, Salman

    2010-12-01

    We employ electroless etching to disperse silicon on insulator (SOI) wafers in ionic silver HF into wirelike silicon nanostructures. The procedure allows detachment of the nanowires at the oxide interface and enables easy recovery of dispersions for subsequent controlled delivery. Nanowires 10 μm long and 50-100 nm thick are demonstrated using an SOI substrate of 10 μm device thickness. Direct material analysis shows no silver contamination after a wet-etch silver clean. Anodization treatment of the wires was conducted. Our measurements and analysis show that the wires are not amenable to anodization resulting from the fact that the nanowire radius is less than the thickness of depletion layer. The procedure has the potential of providing dispersions of arbitrarily long wirelike nanostructures which are useful for composite and energy applications.

  19. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Synthesis of Platinum Nanotubes and Nanorings via Simultaneous Metal Alloying and Etching

    KAUST Repository

    Huang, Zhiqi

    2016-04-19

    Metallic nanotubes represent a class of hollow nanostructures with unique catalytic properties. However, the wet-chemical synthesis of metallic nanotubes remains a substantial challenge, especially for those with dimensions below 50 nm. This communication describes a simultaneous alloying-etching strategy for the synthesis of Pt nanotubes with open ends by selective etching Au core from coaxial Au/Pt nanorods. This approach can be extended for the preparation of Pt nanorings when Saturn-like Au core/Pt shell nanoparticles are used. The diameter and wall thickness of both nanotubes and nanorings can be readily controlled in the range of 14-37 nm and 2-32 nm, respectively. We further demonstrated that the nanotubes with ultrathin side walls showed superior catalytic performance in oxygen reduction reaction. © 2016 American Chemical Society.

  1. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  2. Polymerization monitoring in plasma etching systems

    Science.gov (United States)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization

  3. Development of an electrochemical micromachining instrument for the confined etching techniques.

    Science.gov (United States)

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument.

  4. Development of an electrochemical micromachining instrument for the confined etching techniques

    Science.gov (United States)

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument.

  5. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  6. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  7. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  8. Wetting characteristic of ceramic to water and adhesive resin.

    Science.gov (United States)

    Oh, Won-Suck; Shen, Chiayi; Alegre, Brandon; Anusavice, Kenneth J

    2002-12-01

    Maximum wetting of ceramic by adhesive resin is required to achieve optimal adhesion of the resin to ceramic. It is unknown whether the adhesion of the resin to the ceramic is affected by the surface topography and wetting by water or the adhesive resin. This study was designed to characterize the effect of surface topography on the wetting of ceramics by water and adhesive resin. Three materials, a veneering ceramic, Eris (ERV), and 2 core ceramics, Empress 1 core ceramic (E1C) and an experimental core ceramic (EXC), were used. Four surface-roughening procedures were used. They included polishing through 1200-grit SiC paper (P), air abrasion with 50 microm Al(2)O(3) (A), etching with 5% hydrofluoric acid gel (E), and a combination of airborne particle abrasion and etching (A/E). Forty bar specimens (15 x 10 x 1.5 mm) were prepared from each material (N=120). Twelve groups of 10 specimens each were prepared for the 4 surface-roughening procedures. Advancing (theta(A)) and receding (theta(R)) contact angles were measured with a CAHN Dynamic Contact Analyzer, on the basis of the Wilhelmy plate technique, with water and adhesive resin. The work of adhesion (W(A)) by the probing media was calculated by use of advancing contact angle data. The data were analyzed by t testing, analysis of variance, and Duncan's tests (alpha=0.05) to determine the statistical significance of differences in the contact angles between ceramic and water or resin as a function of surface roughening. In general, the mean theta(A) values were higher than the mean theta(R) values except for groups of E or A/E specimens with water used as a probing medium. E and A/E treatments yielded the lowest contact angle values, followed by A and P treatments (P<.001). The E1C exhibited the highest mean contact angles, whereas EXC exhibited the lowest mean contact angle except for the theta(R) with resin. The corresponding values for ERV were between those of E1C and EXC except for theta(R) values with resin

  9. Wet steam wetness measurement in a 10 MW steam turbine

    Directory of Open Access Journals (Sweden)

    Kolovratník Michal

    2014-03-01

    Full Text Available The aim of this paper is to introduce a new design of the extinction probes developed for wet steam wetness measurement in steam turbines. This new generation of small sized extinction probes was developed at CTU in Prague. A data processing technique is presented together with yielded examples of the wetness distribution along the last blade of a 10MW steam turbine. The experimental measurement was done in cooperation with Doosan Škoda Power s.r.o.

  10. Wet steam wetness measurement in a 10 MW steam turbine

    OpenAIRE

    Kolovratník Michal; Bartoš Ondřej

    2014-01-01

    The aim of this paper is to introduce a new design of the extinction probes developed for wet steam wetness measurement in steam turbines. This new generation of small sized extinction probes was developed at CTU in Prague. A data processing technique is presented together with yielded examples of the wetness distribution along the last blade of a 10MW steam turbine. The experimental measurement was done in cooperation with Doosan Škoda Power s.r.o.

  11. Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

    Science.gov (United States)

    Dawood, M. K.; Tripathy, S.; Dolmanan, S. B.; Ng, T. H.; Tan, H.; Lam, J.

    2012-10-01

    We report on the structural and vibrational characterization of silicon (Si) nanowire arrays synthesized by metal-assisted chemical etching (MACE) of Si deposited with metal nanoparticles. Gold (Au) and silver (Ag) metal nanoparticles were synthesized by glancing angle deposition, and MACE was performed in a mixture of H2O2 and HF solution. We studied the structural differences between Au and Ag-etched Si nanowires. The morphology of the synthesized nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible, and near-infrared) and are correlated to their microstructures. The structural differences between Au-etched and Ag-etched nanowires are due to the higher degree of hole injection by the Au nanoparticle and diffusion into the Si nanowires, causing enhanced Si etching by HF on the nanowire surface. Au-etched nanowires were observed to be mesoporous throughout the nanowire while Ag-etched nanowires consisted of a thin porous layer around the crystalline core. In addition, the surface-enhanced resonant Raman scattering observed is attributed to the presence of the sunken metal nanoparticles. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

  12. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  13. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  14. Facet selective etching of Au microcrystallites

    Institute of Scientific and Technical Information of China (English)

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  15. Studies on a novel mask technique with high selectivity and aspect-ratio patterns for HgCdTe trenches ICP etching

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Li, Y.; Huang, J.; Yin, W. T.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2012-06-01

    A novel mask technique, combining high selectivity silicon dioxide patterns over high aspect-ratio photoresist (PR) patterns has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal plane arrays (IRFPAs). High-density silicon dioxide film covering high aspect-ratio PR patterns was deposited at the temperature of 80°C and silicon dioxide film patterns over high aspect-ratio PR patterns of HgCdTe etching samples was developed by standard photolithography and wet chemical etch. Scanning electron microscopy (SEM) shows that the surfaces of inductively coupled plasma (ICP) etched samples are quite clean and smooth. The etching selectivity between the novel mask and HgCdTe of the samples is increased to above 32: 1 while the side-wall impact of etching plasma is suppressed by the high aspect ratio patterns. These results show that the combined patterning of silicon dioxide film and thick PR film is a readily available and promising masking technique for HgCdTe mesa etching.

  16. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

    Science.gov (United States)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-01

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  17. Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

    Directory of Open Access Journals (Sweden)

    Pushpendra Kumar

    2007-01-01

    Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

  18. Synthesis and Characterization of Chemically Etched Nanostructured Silicon

    KAUST Repository

    Mughal, Asad Jahangir

    2012-05-01

    Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

  19. Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

    KAUST Repository

    Najar, Adel

    2017-04-18

    Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density and the length of nanowires increased with longer etching time, and excellent substrate coverage was observed. The average nanowire width and length are around 35 nm and 10 μm, respectively. Transmission electron microscopy (TEM) shows a single-crystalline wurtzite structure and is confirmed by X-ray measurements. The synthesis mechanism of GaN NWs using the metal-assisted photochemical electroless etching method was presented. Photoluminescence (PL) measurements of GaN NWs show red-shift PL peaks compared to the as-grown sample associated with the relaxation of compressive stress. Furthermore, a shift of the E2 peak to the lower frequency in the Raman spectra for the samples etched for a longer time confirms such a stress relaxation. Based on Raman measurements, the compressive stress σxx and the residual strain εxx were evaluated to be 0.23 GPa and 2.6 × 10−4, respectively. GaN NW synthesis using a low cost method might be used for the fabrication of power optoelectronic devices and gas sensors.

  20. Enhancement of photocathodic stability of p-type copper(I) oxide electrodes by surface etching treatment

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Fumiaki, E-mail: amano@kitakyu-u.ac.jp [Catalysis Research Center, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan); Department of Chemical and Environmental Engineering, The University of Kitakyushu, Kitakyushu 808-0135 (Japan); Ebina, Toshihiro [Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohtani, Bunsho [Catalysis Research Center, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Environmental Science, Hokkaido University, Sapporo 060-0810 (Japan)

    2014-01-01

    The photoelectrochemical properties of electrodeposited p-type copper(I) oxide (Cu{sub 2}O) films were investigated using methyl viologen (MV{sup 2+}) as an electron acceptor. The pristine Cu{sub 2}O films were deactivated during the photocathodic reaction as a result of self-reduction, whereas the (111)-oriented Cu{sub 2}O films treated in an aqueous solution containing hexamethylenetetramine at pH 5 and 90 °C exhibited stable photocurrent for MV{sup 2+} reduction into the cation radical. Scanning electron microscope images showed that the treated films contained smaller crystal grains than untreated ones. X-ray photoelectron spectroscopy revealed that the treatment etched the thin layer of copper(II) oxide from the Cu{sub 2}O polycrystalline surface. Etching of the film surface enhanced the stability and steady-state photocurrent for photocathodic reduction of MV{sup 2+}, suggesting that the crystalline composition and structures exposed on the outermost surface of Cu{sub 2}O polycrystalline films have a considerable influence on the selectivity for the photocathodic reaction over self-reduction. - Highlights: • Photoelectrochemical reduction of methyl viologen by (111)-oriented Cu{sub 2}O thin films • Cu{sub 2}O films are etched using an aqueous solution containing hexamethylenetetramine. • Etching decreases crystal grain size and removes the thin layer of CuO. • Etching enhances the stability of Cu{sub 2}O photoelectrodes.

  1. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  2. Wet solids flow enhancemant

    Energy Technology Data Exchange (ETDEWEB)

    Caram, H.S.; Foster, N.; Wildman, D.J. [USDOE Pittsburgh Energy Technology Center, PA (United States)

    1996-12-31

    WE used glass beads of different sizes as.a model system to study the flow enhancing properties of Octadecyltrichlorosilane (OTS). 0TS provides Si(CH{sub 2}){sub 17}CH{sub 3} groups that bind with the surface hydrox groups to make it hydrophobic. Experimental data showed, indeed, that surface hydrophobicity promotes the flow of wet granular materials. Mixtures of different percentage of silanized/unsilanized particles were prepared for tensile strength measurements. The tensile strength decreased as more silanized particles were added to the samples. The relationship between dimensionless tensile strength and void fraction followed the correlation found by Pierrat (1994). Contact angles were larger for the silanized particles, as compared with unsilanized ones.

  3. Wetting and Minimal Surfaces

    CERN Document Server

    Bachas, C; Wiese, K J; Bachas, Constantin; Doussal, Pierre Le; Wiese, Kay Joerg

    2006-01-01

    We study minimal surfaces which arise in wetting and capillarity phenomena. Using conformal coordinates, we reduce the problem to a set of coupled boundary equations for the contact line of the fluid surface, and then derive simple diagrammatic rules to calculate the non-linear corrections to the Joanny-de Gennes energy. We argue that perturbation theory is quasi-local, i.e. that all geometric length scales of the fluid container decouple from the short-wavelength deformations of the contact line. This is illustrated by a calculation of the linearized interaction between contact lines on two opposite parallel walls. We present a simple algorithm to compute the minimal surface and its energy based on these ideas. We also point out the intriguing singularities that arise in the Legendre transformation from the pure Dirichlet to the mixed Dirichlet-Neumann problem.

  4. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    Science.gov (United States)

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  5. Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy

    Science.gov (United States)

    Soriano, R.; Vallier, L.; Cunge, G.; Sadeghi, N.

    2016-09-01

    Plasma etching of nanometric size, high aspect-ratio structures is more challenging at each new technological node. Remote plasmas are beginning to find use when damages on nanostructures by ion bombardment become critical or when etching with high selectivity on different materials present on the wafer is necessary (i . e . tungsten oxide etching with fluorine and hydrogen containing plasmas in remote reactor from AMAT). Furthermore, it is expected that downstream plasma will replace many wet chemical etching processes to alleviate the issue of pattern collapses caused by capillary forces when nanometer size high aspect ratio structures are immersed in liquids. In these downstream plasmas, radicals are the main active species and a control of their density is of prime importance. Most of gases used and radicals produced in etching plasmas (HBr, BrCl, Br2, NF3, CH2F2,...) have strong absorption bands in the vacuum UV spectral region and we have shown that very low concentration of these species can be detected by VUV absorption. We have recently improved the technique by using a VUV CCD camera, instead of the PMT, which render possible the Broad-Band absorption spectroscopy in the 120-200 nm range, with a deuterium lamp, or a laser produced xenon arc lamp as light source. The multi-spectral detection ability of the CCD reduces the acquisition time to less than 1 second and can permit the real time control of the process control.

  6. Crystalline mesoporous metal oxide

    Institute of Scientific and Technical Information of China (English)

    Wenbo Yue; Wuzong Zhou

    2008-01-01

    Since the discovery of many types of mesoporous silicas, such as SBA-15, KIT-6, FDU-12 and SBA-16, porous crystalline transition metal oxides, such as Cr2O3, Co3O4, In2O3, NiO, CeO2, WO3, Fe2O3 and MnO2, have been synthesized using the mesoporous silicas as hard templates. Several synthetic methods have been developed. These new porous materials have high potential applications in catalysis, Li-ion rechargeable batteries and gas sensors. This article gives a brief review of the research of porous crystals of metal oxides in the last four years.

  7. Cost Reduction of IMM Solar Cells by Recycling Substrates using Wet Chemical Etching Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This program focuses on reducing the cost of substrate reclaim for high-efficiency solar cells fabricated via an epitaxial lift-off (ELO) process, while increasing...

  8. Cost Reduction of IMM Solar Cells by Recycling Substrates Using Wet Chemical Etching Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of the program is to reduce the cost of substrate reclaim for high-efficiency solar cells fabricated by an epitaxial lift-off (ELO) process, and to increase...

  9. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    Science.gov (United States)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  10. Wetting front instability in an initially wet unsaturated fracture

    Energy Technology Data Exchange (ETDEWEB)

    Nicholl, M.J.; Glass, R.J.; Nguyen, H.A.

    1992-12-31

    Experimental results exploring gravity-driven wetting front instability in a pre-wetted, rough-walled analog fracture are presented. Initial conditions considered include a uniform moisture field wetted to field capacity of the analog fracture and the structured moisture field created by unstable infiltration into an initially dry fracture. As in previous studies performed under dry initial conditions, instability was found to result both at the cessation of stable infiltration and at flux lower than the fracture capacity under gravitational driving force. Individual fingers were faster, narrower, longer, and more numerous than observed under dry initial conditions. Wetting fronts were found to follow existing wetted structure, providing a mechanism for rapid recharge and transport.

  11. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  12. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, K.; Kodama, H. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan); Suzuki, K. [TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006 (Japan); Sawabe, A. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan)

    2016-02-01

    The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. - Highlights: • The etch pits formed by plasma etching on heteroepitaxial diamond have been clarified by TEM. • The origin of etch pit was mainly [001] threading dislocation. • These dislocations were identified as edge and 45° mixed type. • The correlation between dislocation types and etch pit shape.

  13. Irregular shaping of polystyrene nanosphere array by plasma etching

    National Research Council Canada - National Science Library

    Luo, Hao; Liu, Tingting; Ma, Jun; Wang, Wei; Li, Heng; Wang, Pengwei; Bai, Jintao; Jing, Guangyin

    2013-01-01

    .... Here, by plasma etching, the controllable tailoring of the nanosphere is realized and its morphology dependence on the initial shape, microscopic roughness, and the etching conditions is investigated quantitatively...

  14. Effect of enamel etching time on roughness and bond strength

    National Research Council Canada - National Science Library

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra...

  15. Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline silicon

    NARCIS (Netherlands)

    Berenschot, Erwin J.W.; Jansen, Henri V.; Tas, Niels R.

    2013-01-01

    When it comes to high-performance filtration, separation, sunlight collection, surface charge storage or catalysis, the effective surface area is what counts. Highly regular fractal structures seem to be the perfect candidates, but manufacturing can be quite cumbersome. Here it is shown-–for the fir

  16. Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array

    Science.gov (United States)

    Watanabe, Kentaroh; Inoue, Tomoyuki; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki

    2015-08-01

    A light trapping effect in GaAs p-i-n solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in the i-layer was demonstrated by applying a light scattering texture to the rear surface of the cell. A thin-film MQW solar cell was successfully fabricated by metal organic vapor phase epitaxy (MOVPE) to grow an inverted n-i-p photovoltaic (PV) structure; this structure was then transferred to a Si support substrate to prevent optical loss due to free carrier absorption. For the light scattering texture, the use of both the wet-etched micro-hole arrayed SiO2 dielectric layer on the rear surface of the cell and the secondarily etched micro hole array on the GaAs layer was attempted. On the SiO2 layer, the micro hole array pattern was obtained by the radio frequency sputtering of the layer followed by wet etching with photolithographic patterning. On the GaAs layer, the micro-hole array pattern was obtained by direct etching through a SiO2 template. Compared with the light scattering effects of the micro-hole-arrayed SiO2 layer, the secondarily etched GaAs rear contact layer showed a significant improvement in external quantum efficiency (EQE) in the wavelength range from 855 to 1000 nm that corresponds to the photon absorption wavelength in MQWs.

  17. Liquid crystalline order in polymers

    CERN Document Server

    Blumstein, Alexandre

    1978-01-01

    Liquid Crystalline Order in Polymers examines the topic of liquid crystalline order in systems containing rigid synthetic macromolecular chains. Each chapter of the book provides a review of one important area of the field. Chapter 1 discusses scattering in polymer systems with liquid crystalline order. It also introduces the field of liquid crystals. Chapter 2 treats the origin of liquid crystalline order in macromolecules by describing the in-depth study of conformation of such macromolecules in their unassociated state. The chapters that follow describe successively the liquid crystalli

  18. TrackEtching - A Java based code for etched track profile calculations in SSNTDs

    Science.gov (United States)

    Muraleedhara Varier, K.; Sankar, V.; Gangadathan, M. P.

    2017-09-01

    A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen's construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code.

  19. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  20. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  1. Comparative Analysis of in vitro Performance of Total-Etch and Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Timur V. Melkumyan

    2016-12-01

    Full Text Available The aim of the study was in vitro assessment of shear bond strength and micro-leakage after application of total-etch and self-etch adhesive systems. Materials and Methods: Four adhesive systems were chosen for assessment of adhesion performance: Contax (DMG, GmbH, Bond Force (Tokuyama Dental Corp. Japan Mfr, Te-Econom Bond (Ivoclar Vivadent, Liechtenstein and Swisstec SL Bond (Coltene, Switzerland. The assessment of bond strength was performed on 20 tooth samples, which were prepared in accordance with the UltraTest technique for shear bond strength (SBS estimation. The test was conducted at a crosshead speed of 1.0 mm/min and results were fixed in kilograms. The assessment of SBS was performed on enamel and dentin separately. Microleakage assessment of self-etch and total-etch adhesive systems was performed on 20 extracted non-carious upper human premolars with immersion in 1% methylene blue solution after thermocycling. Results: Good SBS results and microleakage values on the dentin substrate were obtained after application of the Contax self-etch bonding agent. But the values of bond strength to enamel and the extent of dye penetration within the composite-enamel interface were still better with the total-etch approach.

  2. Microtensile bond strength of etch and rinse versus self-etch adhesive systems.

    Science.gov (United States)

    Hamouda, Ibrahim M; Samra, Nagia R; Badawi, Manal F

    2011-04-01

    The aim of this study was to compare the microtensile bond strength of the etch and rinse adhesive versus one-component or two-component self-etch adhesives. Twelve intact human molar teeth were cleaned and the occlusal enamel of the teeth was removed. The exposed dentin surfaces were polished and rinsed, and the adhesives were applied. A microhybride composite resin was applied to form specimens of 4 mm height and 6 mm diameter. The specimens were sectioned perpendicular to the adhesive interface to produce dentin-resin composite sticks, with an adhesive area of approximately 1.4 mm(2). The sticks were subjected to tensile loading until failure occurred. The debonded areas were examined with a scanning electron microscope to determine the site of failure. The results showed that the microtensile bond strength of the etch and rinse adhesive was higher than that of one-component or two-component self-etch adhesives. The scanning electron microscope examination of the dentin surfaces revealed adhesive and mixed modes of failure. The adhesive mode of failure occurred at the adhesive/dentin interface, while the mixed mode of failure occurred partially in the composite and partially at the adhesive/dentin interface. It was concluded that the etch and rinse adhesive had higher microtensile bond strength when compared to that of the self-etch adhesives.

  3. Dentin diffusion of HEMA released from etch-and-rinse and self-etch bonding systems.

    Science.gov (United States)

    Rathke, Andreas; Alt, Andreas; Gambin, Nadin; Haller, Bernd

    2007-12-01

    The aim of this in vitro study was to determine the diffusion of 2-hydroxyethyl methacrylate (HEMA) released from different bonding systems (BS) through dentin. Occlusal cavities with a remaining dentin thickness (RDT) of 0.5 mm (n=90) and 0.25 mm (n=80), respectively, were prepared in dentin discs of non-carious human molars. Artificial pulp chambers were attached to the pulpal side of each dentin disc. Bonding systems were applied with (Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus) or without (AdheSE, Adper Prompt L-Pop, Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus Self Etch, Xeno III) prior phosphoric acid etching. HEMA was detected by gas chromatography/mass spectrometry (n=10 per BS and RDT). The highest mean HEMA concentration was found in the 0.25 mm RDT group treated with OptiBond FL (13.3 microg) and the lowest mean HEMA concentration was detected in the 0.5 mm RDT group treated with AdheSE (0.5 microg). At 0.25 mm RDT the quantities of HEMA recovered in the artificial pulp chambers were significantly higher than at 0.5 mm RDT, except for Clearfil SE Bond. Etching with phosphoric acid increased the detected HEMA quantities compared with self-etch BS. In deep cavity preparations, etching with phosphoric acid should be avoided in favor of the use of self-etch BS.

  4. Fabricating a variety of micro-optics structures using anisotropic etching of silicon

    Science.gov (United States)

    Li, Bin; Wei, Ming-yue; Wang, Meng; Zhang, Xin-yu; Xie, Chang-sheng; Zhang, Tian-xu

    2010-10-01

    A variety of micro-optics structures can be fabricated using a dual-step anisotropic etching of KOH: H2O over (100) silicon. A key step of this method is the design of mask layout. In accordance with the expected profile, this paper implemented a set of algorithms through computer programming to design the mask, and after setting a set of parameters, the final etching profile can be simulated. According to the data of the mask layout generated by the program, a lithography mask is fabricated, and then through the single-step lithography and dual-step wet etching, the expected profile is acquired. The mask can be fast and efficiently designed using this method, and through follow-up procedures, many kinds of aspherical and irregular micro-structures can be obtained. In this study, a series of 512x512 arrays of concave lenses are designed using the algorithm, and then the follow-up procedures are carried out using the most appropriate corrosion issues calculated by the program, and finally get a good result. At the end of this study, the lens' surface profile, roughness, and optical performance, etc, are tested. Test results show that the micro lens are very neat, and the hole size and depth of each unit have basically the same size. The surface profile and roughness already achieve optical mirror requirements, and the structures have good optical performances.

  5. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching.

    Science.gov (United States)

    Yamin, Tony; Wissberg, Shai; Cohen, Hagai; Cohen-Taguri, Gili; Sharoni, Amos

    2016-06-15

    The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

  6. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-01

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm-2 due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  7. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-24

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  8. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    A.I. Abdalla; A.J. Feilzer

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid Bond’

  9. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  10. COLD DRAWING IN CRYSTALLINE POLYMERS

    Science.gov (United States)

    alcohols, phenol) in Nylon 6 produced changes in the crystalline structure as well as plasticizer action; these two effects must therefore be carefully...distinguished. Changes in the crystalline structure were followed by changes in the infrared spectrum. Dynamic mechanical and thermogravimetric analysis

  11. Fabrication of novel III-N and III-V modulator structures by ECR plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

    1995-12-01

    Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar or CH{sub 4}/H{sub 2}/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H{sub 2}O and HCl/HNO{sub 3}/H{sub 2} O are employed for AlGaAs and InGaP, respectively, a new KOH based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiN{sub x}, while the high surface recombination velocity of exposed AlGaAs ({approximately} 10{sup 5} cm{center_dot}sec {sup {minus}1}) requires encapsulation with ECR-CVD SiN{sup x} to stabilize the optical properties of the modulators.

  12. Two-photon laser confocal microscopy of micropermeability of resin-dentin bonds made with water or ethanol wet bonding.

    Science.gov (United States)

    Sauro, Salvatore; Watson, Timothy F; Mannocci, Francesco; Miyake, Katsuya; Huffman, Bradford P; Tay, Franklin R; Pashley, David H

    2009-07-01

    This study evaluated the micropermeability of six etch-and-rinse adhesives bonded to dentin. There were two principal groups: wet bonding with water or wet bonding with absolute ethyl alcohol. After bonding and the creation of composite build-ups, the pulp chambers were filled with 0.1% lucifer yellow. The contents of the pulp chamber were kept under 20 cm H(2)O pressure to simulate pulpal pressure for 3 h. The specimens were vertically sectioned into multiple 0.5-mm thick slabs that were polished and then examined using a two-photon confocal laser scanning microscope (TPCLSM). The results showed that specimens bonded with adhesives using the water wet-bonding condition all showed tracer taken up uniformly by the hybrid layer. This uptake of fluorescent tracer into the hybrid layer was quantified by computer software. The most hydrophobic experimental resins showed the highest fluorescent tracer uptake (ca. 1800 +/- 160 arbitrary fluorescent units/std. surface area). The most hydrophilic experimental resins showed the lowest tracer uptake into water-saturated hybrid layers. When ethanol wet-bonding was used, significantly less fluorescent tracer was seen in hybrid layers. The most hydrophilic experimental resins and Single Bond Plus showed little micropermeability. Clearly, ethanol wet-bonding seals dentin significantly better than water-wet dentin regardless of the adhesive in etch-and-rinse systems.

  13. Crystalline Bioceramic Materials

    Directory of Open Access Journals (Sweden)

    de Aza, P. N.

    2005-06-01

    Full Text Available A strong interest in the use of ceramics for biomedical engineering applications developed in the late 1960´s. Used initially as alternatives to metallic materials in order to increase the biocompatibility of implants, bioceramics have become a diverse class of biomaterials, presently including three basic types: relatively bioinert ceramics; bioactive or surface reactive bioceramics and bioresorbable ceramics. This review will only refer to bioceramics “sensus stricto”, it is to say, those ceramic materials constituted for nonmetallic inorganic compounds, crystallines and consolidated by thermal treatments of powders to high temperatures. Leaving bioglasses, glass-ceramics and biocements apart, since, although all of them are obtained by thermal treatments to high temperatures, the first are amorphous, the second are obtained by desvitrification of a glass and in them vitreous phase normally prevails on the crystalline phases and the third are consolidated by means of a hydraulic or chemical reaction to room temperature. A review of the composition, physiochemical properties and biological behaviour of the principal types of crystalline bioceramics is given, based on the literature data and on the own experience of the authors.

    A finales de los años sesenta se despertó un gran interés por el uso de los materiales cerámicos para aplicaciones biomédicas. Inicialmente utilizados como una alternativa a los materiales metálicos, con el propósito de incrementar la biocompatibilidad de los implantes, las biocerámicas se han convertido en una clase diversa de biomateriales, incluyendo actualmente tres tipos: cerámicas cuasi inertes; cerámicas bioactivas o reactivas superficialmente y cerámicas reabsorbibles o biodegradables. En la presente revisión se hace referencia a las biocerámicas en sentido estricto, es decir, a aquellos materiales constitutitos por compuestos inorgánicos no metálicos, cristalinos y consolidados

  14. The research on conformal acid etching process of glass ceramic

    Science.gov (United States)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  15. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  16. Chemical etching of deformation sub-structures in quartz

    Science.gov (United States)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  17. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  18. Block copolymer templated etching on silicon.

    Science.gov (United States)

    Qiao, Yinghong; Wang, Dong; Buriak, Jillian M

    2007-02-01

    The use of self-assembled polymer structures to direct the formation of mesoscopic (1-100 nm) features on silicon could provide a fabrication-compatible means to produce nanoscale patterns, supplementing conventional lithographic techniques. Here we demonstrate nanoscale etching of silicon, applying standard aqueous-based fluoride etchants, to produce three-dimensional nanoscale features with controllable shapes, sizes, average spacing, and chemical functionalization. The block copolymers serve to direct the silicon surface chemistry by controlling the spatial location of the reaction as well as concentration of reagents. The interiors of the resulting etched nanoscale features may be selectively functionalized with organic monolayers, metal nanoparticles, and other materials, leading to a range of ordered arrays on silicon.

  19. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  20. Comparison of the effect of wet and dry torrefaction on chemical structure and pyrolysis behavior of corncobs.

    Science.gov (United States)

    Zheng, Anqing; Zhao, Zengli; Chang, Sheng; Huang, Zhen; Zhao, Kun; Wei, Guoqiang; He, Fang; Li, Haibin

    2015-01-01

    Wet and dry torrefaction of corncobs was conducted in high-pressure reactor and tube-type reactor, respectively. Effect of wet and dry torrefaction on chemical structure and pyrolysis behavior of corncobs was compared. The results showed that hemicellulose could be effectively removed from corncobs by torrefaction. However, dry torrefaction caused severe degradation of cellulose and the cross-linking and charring of corncobs. X-ray diffraction analysis revealed that crystallinity degree of corncobs was evidently enhanced during wet torrefaction, but reduced during dry torrefaction as raising treatment temperature. In thermogravimetric analysis, wet torrefied corncobs produced less carbonaceous residues than raw corncobs, while dry torrefied corncobs gave much more residues owing to increased content of acid insoluble lignin. Pyrolysis-gas chromatography/mass spectroscopy analysis indicated that wet torrefaction significantly promoted levoglucosan yield owing to the removal of alkali metals. Therefore, wet torrefaction can be considered as a more effective pretreatment method for fast pyrolysis of biomass.

  1. Characterization of aluminum surfaces: Sorption and etching

    Science.gov (United States)

    Polkinghorne, Jeannette Clera

    Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be successfully utilized in the drive for higher energy and smaller-scale storage devices. Fundamental information gained regarding anion interaction with the aluminum surface can be applied to tailor etch processes. Standard electrochemical techniques and SEM are respectively used to etch and analyze the aluminum substrate. Aluminum electrolytic capacitors are comprised of aluminum anode foil covered by an anodically grown aluminum oxide dielectric film, electrolytic paper impregnated with electrolyte, and aluminum cathode foil. Two main processes are involved in the fabrication of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor manufacture. Anodic oxide formation on the anode, creates the required dielectric to withstand high voltage operation. A

  2. Crystallographic orientation dependent etching of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Nemes-Incze, Peter; Biro, Laszlo Peter [Research Institute for Technical Physics and Materials Science, PO. Box 49, 1525 Budapest (Hungary); Magda, Gabor [Budapest University of Technology and Economics (BME), PO Box 91, 1521 Budapest (Hungary); Kamaras, Katalin [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, 1525, Budapest (Hungary)

    2010-04-15

    Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO{sub 2} support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Track etching technique in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P. E-mail: apel@lnr.jinr.ru

    2001-06-01

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures.

  4. ZERODUR: bending strength data for etched surfaces

    Science.gov (United States)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  5. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  6. Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays.

    Science.gov (United States)

    Ghosh, Ramesh; Imakita, Kenji; Fujii, Minoru; Giri, P K

    2016-03-21

    We report on the strongly enhanced photoluminescence (PL) and visible light photocatalysis by arrays of vertically aligned single crystalline Si nanowires (NWs) grown by Ag/Au bilayer assisted etching. High resolution FESEM and TEM imaging reveals that the Si NWs are decorated with ultra-small size arbitrary shaped Si nanocrystals (NCs) due to the lateral etching of the NWs. A strong broad band and tunable visible to near-infrared (NIR) photoluminescence (PL) in the range 1.3-2.4 eV are observed for these Si NWs/NCs at room temperature, depending on the etching conditions. Our studies reveal that the visible-NIR PL intensity is about two orders of magnitude higher and it exhibits faster decay dynamics in the bilayer assisted etching case as compared to the Ag or Au single layer etching case. The enhanced PL in the bimetal case is attributed to the longer length and higher density of the Si NWs/NCs, surface plasmon resonance enhanced absorption by residual bimetal NPs and the enhanced radiative recombination rate. Studies on the time evolution of PL spectral features with laser exposure under ambient conditions and laser power dependence reveal that both the quantum confinement of carriers in Si NCs and the nonbridging oxygen hole defects in the SiOx layer contribute to the tunable PL. Interestingly, Si NWs grown by Ag/Au bilayer assisted etching exhibit enhanced photocatalytic degradation of methylene blue in comparison to Si NWs grown by single layer Ag or Au assisted etching. The Schottky barrier present between bimetallic NPs and nanoporous Si NWs with Si-H bonds facilitates the photocatalytic activity by efficient separation of photogenerated e-h pairs. Our results demonstrate the superiority of the Si NW array grown by bilayer assisted etching for their cutting edge applications in optoelectronics and environmental cleaning.

  7. Genetics Home Reference: Bietti crystalline dystrophy

    Science.gov (United States)

    ... Understand Genetics Home Health Conditions Bietti crystalline dystrophy Bietti crystalline dystrophy Enable Javascript to view the expand/ ... boxes. Download PDF Open All Close All Description Bietti crystalline dystrophy is a disorder in which numerous ...

  8. Terahertz Spectroscopy of Crystalline and Non-Crystalline Solids

    DEFF Research Database (Denmark)

    Parrott, Edward P. J.; Fischer, Bernd M.; Gladden, Lynn F.

    2013-01-01

    Terahertz spectroscopy of crystalline and non-crystalline solids is probably one of the most active research fields within the terahertz community. Many potential applications, amongst which spectral recognition is probably one of the most prominent, have significantly stimulated the development...... selected examples, the potential the technique holds for various different applications. A particular focus will be given to data analysis and, in particular, how we may account for effects resulting from non-ideal sample preparation....

  9. SETAC-U.S. EPA WET INITIATIVES: ALL WET AND NOTHING BUT WET

    Science.gov (United States)

    To ensure that sould scientific principles and sound science are applied to the challenging issues in t he Whole Effluent Toxicity (WET) process, the Society of Environmental Toxicology and Chemistry (SETAC) Foundation for Environmental Education was awarded a cooperative agreem...

  10. SETAC-U.S. EPA WET INITIATIVES: ALL WET AND NOTHING BUT WET

    Science.gov (United States)

    To ensure that sould scientific principles and sound science are applied to the challenging issues in t he Whole Effluent Toxicity (WET) process, the Society of Environmental Toxicology and Chemistry (SETAC) Foundation for Environmental Education was awarded a cooperative agreem...

  11. Effect of saliva and blood contamination on the bond strength of self-etching adhesive system- An in vitro study

    Science.gov (United States)

    Koppolu, Madhusudhana; Gogala, Dorasani; Mathew, Vinod B; Thangala, Venugopal; Deepthi, Mandava; Sasidhar, Nalluru

    2012-01-01

    Aim: The aims of this study were to determine the effect of saliva and blood contamination on the shear bond strength of self-etching adhesive to enamel and dentin; and, to compare the difference in bond strength due to contamination beforeand after application of the self-etch adhesive. Materials and Methods: 40 human mandibular molars were wet ground on both buccal and lingual surfaces to prepare flat superficial enamel and dentin surfaces. They were randomly divided into two groups (n = 40) based on the substrate (enamel and dentin). Each group was further divided into five subgroups (n = 8) based on the type of contamination it was subjected to, and the step in the bonding sequence when the contamination occurred (before or after adhesive application). Fresh saliva and fresh human blood were applied either before or after the application of Xeno III® self-etching adhesive system (SES). Composite resin was applied as inverted, truncated cured cones that were subjected to shear bond strength test. Statistical Analysis: One-way analysis of variance (ANOVA) and Tukey's Honestly Significant Difference (HSD) test were used. Results: Statistically significant reduction in the bond strength was shown after both saliva and blood contamination before and after Xeno III® application (Pcontamination with blood as compared to saliva. Conclusions: When self-etching adhesive systems are used, saliva and blood contamination significantly decrease the bond strength of the adhesive to enamel and dentin of the tooth. PMID:22876017

  12. Colloidal-crystal-assisted patterning of crystalline materials.

    Science.gov (United States)

    Li, Cheng; Qi, Limin

    2010-04-06

    Colloidal crystals have shown great potential as versatile templates for the fabrication of patterned micro- and nanostructures with complex architectures and novel properties. The patterning of functional crystalline materials in two and three dimensions is essential to the realization of their applications in many technologically important fields. This article highlights some recent progress in the fabrication of 2D and 3D patterned crystalline materials with the assistance of colloidal crystals. By combining a bioinspired synthetic strategy based on a transient amorphous phase with a colloidal-crystal templating method, unique 3D ordered macroporous (3DOM) calcite single crystals can be created. Moreover, patterned arrays of regular ZnO nanopillars with controlled size, shape, and orientation can be fabricated via a facile wet chemical approach by using masks derived from monolayer colloidal crystals (MCC).

  13. Wettability and surface chemistry of crystalline and amorphous forms of a poorly water soluble drug.

    Science.gov (United States)

    Puri, Vibha; Dantuluri, Ajay K; Kumar, Mahesh; Karar, N; Bansal, Arvind K

    2010-05-12

    The present study compares energetics of wetting behavior of crystalline and amorphous forms of a poorly water soluble drug, celecoxib (CLB) and attempts to correlate it to their surface molecular environment. Wettability and surface free energy were determined using sessile drop contact angle technique and water vapor sorption energetics was measured by adsorption calorimetry. The surface chemistry was elucidated by X-ray photoelectron spectroscopy (XPS) and crystallographic evaluation. The two solid forms displayed distinctly different wetting with various probe liquids and in vitro dissolution media. The crystalline form surface primarily exhibited dispersive surface energy (47.3mJ/m(2)), while the amorphous form had a slightly reduced dispersive (45.2mJ/m(2)) and a small additional polar (4.8mJ/m(2)) surface energy. Calorimetric measurements, revealed the amorphous form to possess a noticeably high differential heat of absorption, suggesting hydrogen bond interactions between its polar energetic sites and water molecules. Conversely, the crystalline CLB form was found to be inert to water vapor sorption. The relatively higher surface polarity of the amorphous form could be linked to its greater oxygen-to-fluorine surface concentration ratio of 1.27 (cf. 0.62 for crystalline CLB), as determined by XPS. The crystallographic studies of the preferred cleavage plane (020) of crystalline CLB further supported its higher hydrophobicity. In conclusion, the crystalline and amorphous forms of CLB exhibited disparate surface milieu, which in turn can have implications on the surface mediated events.

  14. [Restoration of composite on etched stainless steel crowns. (1)].

    Science.gov (United States)

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  15. Propagation of plasmons in designed single crystalline silver nanostructures

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Lu, Ying-Wei; Huck, Alexander;

    2012-01-01

    We demonstrate propagation of plasmons in single crystalline silver nanostructures fabricated using a combination of a bottom-up and a top-down approach. Silver nanoplates of thickness around 65 nm and a surface area of about 100 μm2 are made using a wet chemical method. Silver nanotips...... and nanowires are then sculptured by focused ion beam milling. The plasmons are excited by using the fluorescence from the redeposited silver clusters during the milling process. Propagation of plasmons in the nanowires is observed in the visible spectral region. We also observe a cavity effect by measuring...

  16. Amorphization of Crystalline Water Ice

    CERN Document Server

    Zheng, Weijun; Kaiser, Ralf I

    2008-01-01

    We conducted a systematic experimental study to investigate the amorphization of crystalline ice by irradiation in the 10-50 K temperature range with 5 keV electrons at a dose of ~140 eV per molecule. We found that crystalline water ice can be converted partially to amorphous ice by electron irradiation. Our experiments showed that some of the 1.65-micrometer band survived the irradiation, to a degree that depends on the temperature, demonstrating that there is a balance between thermal recrystallization and irradiation-induced amorphization, with thermal recrystallizaton dominant at higher temperatures. At 50 K, recrystallization due to thermal effects is strong, and most of the crystalline ice survived. Temperatures of most known objects in the solar system, including Jovian satellites, Saturnian satellites, and Kuiper belt objects, are equal to or above 50 K, this might explain why water ice detected on those objects is mostly crystalline.

  17. Liquid-crystalline lanthanide complexes

    OpenAIRE

    Binnemans, Koen

    1999-01-01

    The paper describes the recent developments in the field of liquid-crystalline lanthanide complexes. The role of trivalent lanthanide ions as the central metal ion in metallomesogens is considered. An outlook for the future is given.

  18. Diffusion in porous crystalline materials

    NARCIS (Netherlands)

    Krishna, R.

    2012-01-01

    The design and development of many separation and catalytic process technologies require a proper quantitative description of diffusion of mixtures of guest molecules within porous crystalline materials. This tutorial review presents a unified, phenomenological description of diffusion inside meso-

  19. STUDIES ON THE PORE FORMATION MECHANISM OF β-CRYSTALLINE POLYPROPYLENE UNDER STRETCHING

    Institute of Scientific and Technical Information of China (English)

    Shao-feng Ran; Mao Xu

    2004-01-01

    The pore formation mechanism of β-crystalline polypropylene under stretching was investigated. The porosity of the samples increases rapidly with stretching, having a maximum at draw ratios around 2 and then decreases monotonically.An abrupt formation process of initial micropores at very low draw ratios was evidenced by in situ SAXS measurements. At the same time the phase transition from β-crystal to a-crystal proceeds slowly in the whole deformation process up to large draw ratios around 5. Comparative studies of a- and β-crystalline polypropylene samples before stretching indicate that in addition to difference in crystal forms the a- and β-crystalline polypropylene samples exhibit quite different morphological features. There are a lot of interfaces in β-crystalline polypropylene samples, which may have a lower density value and can be easily etched by argon ions and penetrated by small molecules. It was concluded from these experimental facts that the pore formation and crystal transition are two independent phenomena during the deformation of β-crystalline polypropylene samples, and phase transition from β-crystal to a-crystal could hardly be the origin of pore formation. A defect initiation mechanism was proposed to understand the pore formation behavior of β-crystalline polypropylenes.

  20. Inexpensive transparent nanoelectrode for crystalline silicon solar cells.

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-12-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  1. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  2. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-06-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  3. Histologic Evaluation of Human Pulp Response to Total Etch and Self Etch Adhesive Systems

    OpenAIRE

    Malekipour, Mohammad Reza; Razavi, Sayed Mohammad; Khazaei, Saber; Kazemi, Shantia; Behnamanesh, Maryam; Shirani, Farzaneh

    2013-01-01

    Background To investigate pulp response to the application of two types adhesive systems (total-etch and self-etch) in human premolar teeth. Materials and Methods Cavities limited to enamel walls in all margins with 2.5 mm depth were prepared on buccal surfaces of thirty three human premolars. The cavities were treated with the following adhesive. Single Bond (SB) and Prompt L-Pop (PLP). The teeth were extracted after 30 days and prepared due to histological technique. Results Pulp responses ...

  4. Er:YAG laser radiation etching of enamel

    Science.gov (United States)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  5. Squeezing wetting and nonwetting liquids.

    Science.gov (United States)

    Samoilov, V N; Persson, B N J

    2004-01-22

    We present molecular-dynamics results for the squeezing of octane (C8H18) between two approaching solid elastic walls with different wetting properties. The interaction energy between the octane bead units and the solid walls is varied from a very small value (1 meV), corresponding to a nonwetting surface with a very large contact angle (nearly 180 degrees), to a high value (18.6 meV) corresponding to complete wetting. When at least one of the solid walls is wetted by octane we observe well defined molecular layers develop in the lubricant film when the thickness of the film is of the order of a few atomic diameters. An external squeezing-pressure induces discontinuous, thermally activated changes in the number n of lubricant layers (n-->n-1 layering transitions). With increasing interaction energy between the octane bead units and the solid walls, the transitions from n to n-1 layers occur at higher average pressure. This results from the increasing activation barrier to nucleate the squeeze-out with increasing lubricant-wall binding energy (per unit surface area) in the contact zone. Thus, strongly wetting lubricant fluids are better boundary lubricants than the less wetting ones, and this should result in less wear. We analyze in detail the effect of capillary bridge formation (in the wetting case) and droplets formation (in the nonwetting case) on the forces exerted by the lubricant on the walls. For the latter case small liquid droplets may be trapped at the interface, resulting in a repulsive force between the walls during squeezing, until the solid walls come into direct contact, where the wall-wall interaction may be initially attractive. This effect is made use of in some practical applications, and we give one illustration involving conditioners for hair care application.

  6. Track-etched membrane: dynamics of pore formation

    Science.gov (United States)

    Ferain, E.; Legras, R.

    1994-02-01

    The dynamics of pore formation during etching of heavy ion (Ar 9+ - 4.5 MeV/amu) irradiated bisphenol-A polycarbonate (PC) and polyethylene terephthalate (PET) films is determined by a conductivity cell. This work presents the theoretical basis of this method and describes the experimental procedure. The obtained results allow the determination of the track ( Vt) and bulk ( Vg) etch rates, and an estimate of the damage zone diameter in PC before etching.

  7. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  8. Modification of etching patterns in bovine dental enamel.

    Science.gov (United States)

    Lees, S; Trombly, P L; Skobe, Z; Gariepy, E E; Trull, A F

    1979-08-01

    It is presumed that the etching pattern is controlled by the residual organic content of dental enamel. Pretreatment with 1.ON NaOH sould remove the organic material and modify the etching pattern. SEM studies and other tests for physical and chemical properties show that the predicted modification of the etching pattern, when the tooth surface is pretreated with NaOH solution, occurs apparently without other changes or properties.

  9. Wet flue gas desulfurization processes

    Directory of Open Access Journals (Sweden)

    Hayrunnisa Çavuşoğlu

    2013-04-01

    Full Text Available The wet flue gas desulfurization process is widely used for the treatment of exhaust gases in power stations. Due to its high level of effectiveness over the already available processes, it has also been the mostly preferred method by industry. Its high SO2 removal efficiency, wide applicability of absorption chemicals and the ease of the chemical process handling which does not require comprehensive konowledge are among the main advantages of this process. In this article, various wet flue gas desulfurization processes such as lime/limestone have beendiscussed.

  10. Lateral electrochemical etching of III-nitride materials for microfabrication

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  11. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  12. State of the art etch-and-rinse adhesives

    OpenAIRE

    Pashley, David H.; Tay, Franklin R.; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M.; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2010-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti...

  13. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  14. Pre-etching vs. grinding in promotion of adhesion to intact enamel using self-etch adhesives.

    Science.gov (United States)

    Nazari, Amir; Shimada, Yasushi; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study was aimed to determine the effectiveness of grinding and pre-etching in promotion of adhesion to human intact enamel using the self-etch adhesive (SEA) Adper Easy Bond (3M ESPE). Etch-and-rinse adhesive Adper Single Bond (3M ESPE) served as control. Composite cylinders (AP-X Kuraray) were built and after 24 h micro-shear bond strengths (MSBS) were measured. Bonding interfaces were evaluated under scanning electron microscope (SEM). For evaluation of average roughness (Ra) and morphological analysis, treated enamel surfaces were observed under SEM and confocal laser scanning microscope (CLSM) with 3D surface profiling. Highest bond strengths were obtained by pre-etching and grinding showed a less significant role. Phosphoric acid (PA) etching compare to grinding created significantly rougher surface (Ra: 0.72 and 0.43 µm respectively). Therefore, this study recommends pre-etching the intact enamel prior to application of the adhesive instead of grinding.

  15. Workshop on hydrology of crystalline basement rocks

    Energy Technology Data Exchange (ETDEWEB)

    Davis, S.N. (comp.)

    1981-08-01

    This workshop covered the following subjects: measurements in relatively shallow boreholes; measurement and interpretation of data from deep boreholes; hydrologic properties of crystalline rocks as interpreted by geophysics and field geology; rock mechanics related to hydrology of crystalline rocks; the possible contributions of modeling to the understanding of the hydrology of crystalline rocks; and geochemical interpretations of the hydrology of crystalline rocks. (MHR)

  16. Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B.; Davidson, Lauren M.; Nichols, Logan; Duan, Wenqi; Jura, Michael P.; Yim, Joanne; Forziati, Joanne; Black, Marcie R.

    2016-10-01

    There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or ‘black silicon’. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional ‘iso-texturing’ (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63 Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8 Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting

  17. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    NARCIS (Netherlands)

    Roozeboom, F.; Kniknie, B.J.; Lankhorst, A.M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.W.G.; Dingemans, G.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In

  18. Ordered Micro/Nanostructures with Geometric Gradient: From Integrated Wettability "Library" to Anisotropic Wetting Surface.

    Science.gov (United States)

    Xue, Peihong; Nan, Jingjie; Wang, Tieqiang; Wang, Shuli; Ye, Shunsheng; Zhang, Junhu; Cui, Zhanchen; Yang, Bai

    2017-01-01

    Geometric gradients within ordered micro/nanostructures exhibit unique wetting properties. Well-defined and ordered microsphere arrays with geometric gradient (OMAGG) are successfully fabricated through combining colloidal lithography and inclined reactive ion etching (RIE). During the inclined RIE, the graded etching rates in vertical direction of etcher chamber are the key to generating a geometric gradient. The OMAGG can be used as an effective mask for the preparation of micro/nanostructure arrays with geometric gradient by selective RIE. Through this strategy, a well-defined wettability "library" with graded silicon cone arrays is fabricated, and the possibility of screening one desired "book" from the designated wettability "library" is demonstrated. Meanwhile, the silicon cone arrays with geometric gradient (SCAGG) can be applied to control the wetting behavior of water after being modified by hydrophilic or hydrophobic chemical groups. Based on this result, a temperature-responsive wetting substrate is fabricated by modifying poly n-isopropyl acrylamide (PNIPAM) on the SCAGG. These wettability gradients have great potential in tissue engineering, microfluidic devices, and integrated sensors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Nanostructures having crystalline and amorphous phases

    Science.gov (United States)

    Mao, Samuel S; Chen, Xiaobo

    2015-04-28

    The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

  20. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns.

    Science.gov (United States)

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L

    2014-07-18

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  1. The use of the grey-Taguchi method for the optimization of a silicon nanowires array synthesized using electroless Ag-assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiou, Ai-Huei [National Chiao Tung University, Department of Mechanical Engineering (China); Wu, Wen-Fa [National Nano Device Laboratories (China); Chen, Ding-Yeng, E-mail: dnc@cc.hwh.edu.tw [Hwa Hsia Institute of Technology, Department of Mechanical Engineering (China); Hsu, Chun-Yao, E-mail: cyhsu@mail.lhu.edu.tw [Lunghwa University of Science and Technology, Department of Mechanical Engineering (China)

    2013-09-15

    A simple and convenient method for the production of silicon nanowires (SiNWs) that are single crystalline, well aligned and which have large area is direct synthesis onto p-type (100) silicon (Si) wafers, using electroless Ag-assisted etching, in which Ag is both the oxidant and the catalyst. This study proposes a method for the optimization of the etching process parameters for SiNW arrays with multiple performance characteristics, using grey-Taguchi analysis. The effect of the etching process parameters (etching time, solution (AgNO{sub 3}/HF) temperature, silver nitrate (AgNO{sub 3}) concentration and hydrogen fluoride (HF) concentration) on the length, diameter, structure, and morphology of the SiNW arrays were studied. In the confirmation runs, grey relational analysis shows that the length of the SiNW arrays is increased from 15.80 to 23.07 {mu}m, and the diameter is decreased from 76.77 to 66.65 nm. Further, the linear relationship for the SiNW arrays can be adjusted by increasing the etching time (from 15 to 45 min) and the solution temperature (from 25 to 75 Degree-Sign C). The axial orientation of the SiNWs is determined to be along the [001] direction, which is the same as that of the initial Si wafer. The large area SiNW arrays have potential applications in interconnect, bio-technology and optoelectronic devices.

  2. Inhibiting Wet Oxidation of Ammonia

    Science.gov (United States)

    Onisko, D. B. L.

    1985-01-01

    Simple modification of wet-oxidation process for treating organicwaste reduces loss of fixed nitrogen, potentially valuable byproduct of process. Addition of sufficient sulfuric acid to maintain reaction pH below 3 greatly reduces oxidation of ammonia to free nitrogen. No equipment modification required.

  3. Wedge wetting by electrolyte solutions

    Science.gov (United States)

    Mußotter, Maximilian; Bier, Markus

    2017-09-01

    The wetting of a charged wedgelike wall by an electrolyte solution is investigated by means of classical density functional theory. As in other studies on wedge wetting, this geometry is considered as the most simple deviation from a planar substrate, and it serves as a first step toward more complex confinements of fluids. By focusing on fluids containing ions and surface charges, features of real systems are covered that are not accessible within the vast majority of previous theoretical studies concentrating on simple fluids in contact with uncharged wedges. In particular, the filling transition of charged wedges is necessarily of first order, because wetting transitions of charged substrates are of first order and the barrier in the effective interface potential persists below the wetting transition of a planar wall; hence, critical filling transitions are not expected to occur for ionic systems. The dependence of the critical opening angle on the surface charge, as well as the dependence of the filling height, of the wedge adsorption, and of the line tension on the opening angle and on the surface charge are analyzed in detail.

  4. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    Science.gov (United States)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  5. Quantized conductance in up to 20 μm long shallow etched GaAs/AlGaAs quantum wires

    Science.gov (United States)

    Worschech, L.; Beuscher, F.; Forchel, A.

    1999-07-01

    Conductance quantization is observed in up to 20 μm long and 135 nm wide quantum wires fabricated by wet chemical etching of modulation-doped GaAs/AlGaAs heterostructures. With increasing wire length, the higher plateaus in the conductance vanish, whereas a fundamental step persists up to a length comparable to the transport mean free path of the two-dimensional layers. Via magnetic depopulation of the one-dimensional (1D) subbands a lateral depletion length of wdep=15 nm is estimated for a gate voltage of 1.1 V. By temperature dependent measurements the energy spacings between the 1D subbands are investigated.

  6. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    Science.gov (United States)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  7. Etching with atomic precision by using low electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Monroy, G. A.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2017-07-01

    There has been a steady increase in sub-nm precision requirement for many critical plasma etching processes in the semiconductor industry. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in conventional radio-frequency (RF) plasma processing systems, even during layer-by-layer or ‘atomic layer’ etch. To meet these increasingly stringent requirements, it is necessary to have an accurate control over ion energy and ion/radical composition during plasma processing. In this work, a new plasma etch system designed to facilitate atomic precision plasma processing is presented. An electron sheet beam parallel to the substrate surface is used to produce a plasma in this system. This plasma has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i  plasmas. Electron beam plasmas also have a higher ion-to-radical ratio compared to RF plasmas, so this plasma etch system employs an independent radical source for accurate control over relative ion and radical concentrations. A low frequency RF bias capability that allows control of ion energy in the 2-50 eV range is another important component of this plasma etch system. The results of etching of a variety of materials and structures in this low-electron temperature plasma system are presented in this study: (1) layer-by-layer etching of p-Si at E i ~ 25-50 eV using electrical and gas cycling is demonstrated; (2) continuous etching of epi-grown µ-Si in Cl2-based plasmas is performed, showing that surface damage can be minimized by keeping E i  etching at low E i.

  8. Anisotropy of synthetic diamond in catalytic etching using iron powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junsha [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan); Wan, Long, E-mail: wanlong1799@163.com [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Chen, Jing [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan)

    2015-08-15

    Highlights: • Synthetic diamond crystallites were etched using iron without requiring hydrogen. • The effect of temperature on the etching behaviour was demonstrated. • The anisotropy of etching on different crystal planes was investigated. • The extent of etching on diamond surface was examined quantitatively. • A schematic model for diamond etching by iron is being proposed. - Abstract: This paper demonstrated a novel technique for catalytic etching of synthetic diamond crystallites using iron (Fe) powder without flowing gas. The effect of temperature on the etching behaviour on different crystal planes of diamond was investigated. The surface morphology and surface roughness of the processed diamond were examined by scanning electron microscope (SEM) and laser-probe surface profiling. In addition, the material composition of the Fe-treated diamond was characterized using micro-Raman spectroscopy and the distribution of chemical elements and structural changes on Fe-loaded diamond surfaces were analyzed by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results showed that at the same temperature the {1 0 0} plane was etched faster than the {1 1 1} plane, and that the etching rate of both {1 0 0} and {1 1 1} plane increased with temperature. The etch pits on {1 0 0} plane were reversed pyramid with flat {1 1 1} walls, while the etch holes on {1 1 1} plane were characterized with flat bottom. It was also demonstrated that graphitization of diamond and subsequent carbon diffusion in molten iron were two main factors resulting in the removal of carbon from the diamond surface.

  9. The ESEM used to image crystalline structures of polymers and to image ink on paper.

    Science.gov (United States)

    Rask, J H; Flood, J E; Borchardt, J K; York, G A

    1993-08-01

    This article describes two cases in which the advantages of the ESEM have been exploited in unanticipated ways. First, we have found that etching occurs as the electron beam scans the surface of uncoated polymers in the ESEM. The surface topography caused by this etching, as seen in ESEM images, reflects the morphology of crystalline structures in the polymers. This technique has been valuable in the study of such textures in polymers. The second application is related to our use of the ESEM in support of research on the deinking of paper. In this effort we have learned that an unconventional contrast mechanism can be used during ESEM imaging to distinguish between inked and non-inked areas of newsprint. Under usual operating conditions, ESEM imaging does not distinguish between inked and non-inked areas. However, at relatively low sample chamber pressures the non-inked areas appear brighter than inked areas in ESEM images.

  10. CHOLESTERIC LIQUID CRYSTALLINE CHARACTER ON THE SURFACE OF CHITOSAN/POLYACRYLIC ACID COMPOSITES

    Institute of Scientific and Technical Information of China (English)

    Yan-ming Dong; Yu-song; Wu Mian Wang

    2001-01-01

    The cholesteric liquid crystalline structure in chitosan/polyacrylic acid composite films was studied by surface techniques. A periodical lamellar-like structure was observed in the permanganic acid etched film surface by both scanning electron microscopy (SEM) and atomic force microscopy (AFM), instead of the thumb-print texture which can be detected with polarized optical microscopy. It is suggested that the periodical lamellar-like structure is induced by the etching selectivity between cholesteric layers due to different molecular arrangement on the film surface. Four kinds of perpendicular disclinations, I.e. Χ→τ- + λ+, χ→λ- + τ+, χ→τ- + τ+ and χ→λ- + λ+, were found in the composite films from SEM observations. The smallest periodicity of lamellar-like structure (equals to halfpitch) is 20~40 nm measured with AFM.

  11. Crystalline 'Genes' in Metallic Liquids

    CERN Document Server

    Sun, Yang; Ye, Zhuo; Fang, Xiaowei; Ding, Zejun; Wang, Cai-Zhuang; Mendelev, Mikhail I; Ott, Ryan T; Kramer, M J; Ho, Kai-Ming

    2014-01-01

    The underlying structural order that transcends the liquid, glass and crystalline states is identified using an efficient genetic algorithm (GA). GA identifies the most common energetically favorable packing motif in crystalline structures close to the alloy's Al-10 at.% Sm composition. These motifs are in turn compared to the observed packing motifs in the actual liquid structures using a cluster-alignment method which reveals the average topology. Conventional descriptions of the short-range order, such as Voronoi tessellation, are too rigid in their analysis of the configurational poly-types when describing the chemical and topological ordering during transition from undercooled metallic liquids to crystalline phases or glass. Our approach here brings new insight into describing mesoscopic order-disorder transitions in condensed matter physics.

  12. Calcium phosphate bioceramics prepared from wet chemically precipitated powders

    Directory of Open Access Journals (Sweden)

    Kristine Salma

    2010-03-01

    Full Text Available In this work calcium phosphates were synthesized by modified wet chemical precipitation route. Contrary to the conventional chemical precipitation route calcium hydroxide was homogenized with planetary mill. Milling calcium oxide and water in planetary ball mill as a first step of synthesis provides a highly dispersed calcium hydroxide suspension. The aim of this work was to study the influence of main processing parameters of wet chemical precipitation synthesis product and to control the morphology, phase and functional group composition and, consequently, thermal stability and microstructure of calcium phosphate bioceramics after thermal treatment. The results showed that it is possible to obtain calcium phosphates with different and reproducible phase compositions after thermal processing (hydroxyapatite [HAp], β-tricalcium phosphate [β-TCP] and HAp/β-TCP by modified wet-chemical precipitation route. The β-TCP phase content in sintered bioceramics samples is found to be highly dependent on the changes in technological parameters and it can be controlled with ending pH, synthesis temperature and thermal treatment. Pure, crystalline and highly thermally stable (up to 1300°C HAp bioceramics with homogenous grainy microstructure, grain size up to 200–250 nm and high open porosity can be successfully obtained by powder synthesized at elevated synthesis temperature of 70°C and stabilizing ending pH at 9.

  13. Designer-Wet Micromodels for Studying Potential Changes in Wettability during Microbial Enhanced Oil Recovery

    Science.gov (United States)

    Armstrong, R. T.; Wildenschild, D.

    2010-12-01

    Microbial Enhanced Oil Recovery (MEOR) is a process where microorganisms are used for tertiary recovery of oil. Some bacteria can facilitate the mobilization of oil through the production of amphiphilic compounds called biosurfactants that reduce the interfacial tension (IFT) between immiscible phases. Additionally, most bacteria have an inclination to colonize surfaces and form biofilm, which can change a reservoir's wetting properties or clog preferential flow paths. Herein, we aim to understand changes in wettability during MEOR under mixed wettability conditions within silicon etched micromodels and to identify the type of oil field (i.e. based on wettability) in which MEOR is likely to be most profitable. To quantify porous media wettability, macro-scale indexes (obtained with techniques such as the Carter or Amott methods) are used regularly. However, these measurements lack the capability for characterization of changes in wettability during MEOR treatment, and only provide macro-scale information. In an effort to understand micro-scale temporal and spatial changes in wettability we measure interfacial curvature from stereo microscope images using level set methods. Curvature, from the perspective of the oil phase, is positive for a concave interface (i.e. water-wet surface) and negative for a convex interface (i.e. oil-wet surface). Thus, shifts in the radius of curvature distribution (i.e. from positive to negative or conversely) are indicative of wettability changes. Both curvature distributions using level-set methods and the Carter method are used to characterize wettability before and after microbial treatment. In preliminary studies aimed at understanding wettability changes due to microbial surface interactions by Bacillus mojavensis JF-2, oil droplets were placed on glass slides suspended in growth media and the resulting contact angle was measured over time. Results showed that a water-wet surface will become more water wet as JF-2 accumulated in

  14. Positronium diffusion in crystalline polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Serna, J. (Dept. de Fisica de Materiales, Univ. Complutense, Madrid (Spain))

    1990-12-16

    The analysis in four components of the positron lifetime spectra of nine different and structurally well characterised lamellar polyethylene samples has allowed to associate the two longest-lived components to positronium annihilation in the crystalline and amorphous phases. Further assumption on positronium tunneling through the interface between both phases, and a simple geometrical model, led to a value for the positronium diffusion coefficient in the crystalline phase of the order of 10{sup -4} cm{sup 2}/s. Interfaces have thicknesses around 1.5 nm and are shallow traps for positronium. (orig.).

  15. Fabrication of Alumina Nanowires from Porous Alumina Membranes by Etching in Phosphoric Acid Solution

    Science.gov (United States)

    Wang, Xuehua; Li, Chengyong; Ma, Lianjiao; Cao, Hong; Zhang, Baohua

    Alumina nanowires (ANWs) with high aspect ratios were synthesized by the chemical etching of porous alumina membranes (PAMs) in phosphoric acid solution. The morphology and structure of ANWs were analyzed by SEM and XRD, respectively. The results showed that the typical features of ANWs are around 35 nm in diameter and around 20 μm in length, the crystalline structure of the ANWs was amorphous, which was in accordance with that of the PAMs. Furthermore, the morphology of the PAMs was characterized by AFM and SEM in detail. On the basis of AFM and SEM observations, a possible formation mechanism of ANWs was discussed, and the inhomogeneous of the dissolution between the triple points and the side walls was considered to be the essential factor deciding the formation of ANWs.

  16. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.

    2016-01-01

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  17. Orthodox etching of HVPE-grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  18. Microstructure, composition, and etching topography of dental ceramics.

    Science.gov (United States)

    Della Bona, Alvaro; Anusavice, Kenneth J

    2002-01-01

    Topographic analysis of etched ceramics provides qualitative surface structure information that affects micromechanical retention mechanisms. This study tested the hypothesis that the etching mechanism changes according to the type of etchant and the ceramic microstructure and composition. Quantitative and qualitative analyses of 15 dental ceramics were performed using scanning electron microscopy, back-scattered imaging, X-ray diffraction, optical profilometry, and wavelength dispersive spectroscopy based on Phi-Rho-Z correction. All ceramic specimens were polished to 1 micron with diamond compound, and the following etchants and etching times were used: ammonium bifluoride (ABF) for 1 minute, 9.6% hydrofluoric acid (HF) for 2 minutes, and 4% acidulated phosphate fluoride (APF) for 2 minutes. HF produced an irregular etching pattern in which pores were the characteristic topographic feature. ABF-etched ceramic surfaces showed mostly grooves, and APF etchant caused a buildup of surface precipitate. Core ceramics showed less topographic change after etching because of their high alumina content and low chemical reactivity. The observations suggest that the etching mechanism is different for the three etchants, with HF producing the most prominent etching pattern on all dental ceramics examined.

  19. Reactive ion etching of quartz and Pyrex for microelectronic applications

    Science.gov (United States)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  20. Versatile apparatus for etching scanning tunneling microscope tips

    Science.gov (United States)

    Fiering, J. O.; Ellis, F. M.

    1990-12-01

    We have developed an apparatus for easy and consistent etching of small tips suitable for use with a scanning tunneling microscope. Its unique features are free access to the etching region and a continuous supply of electrolyte for the production of many tips in succession.

  1. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

    Science.gov (United States)

    Ghazaryan, Lilit; Kley, E.-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-01

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  2. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Lehmann, Jascha [Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Potsdam Institute for Climate Impact Research (PIK), 14473 Potsdam (Germany); Lehmann, Sebastian, E-mail: sebastian.lehmann@ftf.lth.se [Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden); Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch. [Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Bär, Marcus, E-mail: marcus.baer@helmholtz-berlin.de [Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus (Germany); Sadewasser, Sascha, E-mail: sascha.sadewasser@inl.int [Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga s/n, 4715-330 Braga (Portugal)

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  3. Morphological and optical properties of n-type porous silicon: effect of etching current density

    Indian Academy of Sciences (India)

    M DAS; D SARKAR

    2016-12-01

    Morphological and optical properties of porous silicon (PS) layer fabricated on n-type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ($J$). Porosity and PS layer thickness, obtained by the gravimetric method, increase with increasing $J$. Pore morphology observed by FESEM shows the presence of randomly distributed pores with mostly spherical shape. Calculated pore size is also seen to increase with increasing value of $J$. XRD gives the characteristic amorphous peak of PS along with some peaks corresponding to crystalline silicon (c-Si). Calculated crystallite size shows decreasing trend with increasing $J$ value. The optical properties of these samples have been investigated by UV–visible reflectance, Raman spectroscopy and photoluminescence (PL) spectra. Reflectance measurement shows blue-shift of the spectrum with increased reflectivity for increasing $J$. Raman spectra show remarkable blue-shift with respect to the c-Si peak. PL spectra give the luminescence energy in the orange–red region of the visible spectrum and little change with variation of $J$.

  4. Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

    Science.gov (United States)

    Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

    1993-01-01

    We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

  5. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  6. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  7. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.

  8. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  9. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    Science.gov (United States)

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  10. Clinical effectiveness of self-etching adhesives with or without selective enamel etching in noncarious cervical lesions: A systematic review

    Directory of Open Access Journals (Sweden)

    Wei Qin

    2014-12-01

    Conclusion: Previous enamel etching resulted in fewer marginal defects and marginal discoloration, compared with using the SE approach alone. For restoration retention, the differences between the two groups were not significant. Additional longer follow ups and large-scale investigations are expected to assess possible advantages of selective enamel etching in NCCL restorations.

  11. Thermal neutron dosimetry using electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Su, S.J.; Sanders, M.E.; Morgan, K.Z.

    1979-07-10

    This study demonstrates the feasibility of using high LET particle radiators to determine the thermal neutron dose by reaction particle registration in low background polycarbonate foils using electrochemical etching. When used in conjunction with the already proven fast neutron recoil particle track registration technique, a viable fast and thermal neutron dosimeter is realized with the advantages of being: non-fading, insensitive to low LET radiation reactions, inexpensive in both processing and materials, useable over a wide dose range, a permanant record and good reproducibility, highly sensitive, and tissue equivalent and a dose equivalent response over a wide range. Most importantly, it finally provides a simple and reliable dosimeter for both the fast and thermal neutron components.

  12. Generic Crystalline Disposal Reference Case

    Energy Technology Data Exchange (ETDEWEB)

    Painter, Scott Leroy [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Harp, Dylan Robert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Perry, Frank Vinton [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Wang, Yifeng [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-02-20

    A generic reference case for disposal of spent nuclear fuel and high-level radioactive waste in crystalline rock is outlined. The generic cases are intended to support development of disposal system modeling capability by establishing relevant baseline conditions and parameters. Establishment of a generic reference case requires that the emplacement concept, waste inventory, waste form, waste package, backfill/buffer properties, EBS failure scenarios, host rock properties, and biosphere be specified. The focus in this report is on those elements that are unique to crystalline disposal, especially the geosphere representation. Three emplacement concepts are suggested for further analyses: a waste packages containing 4 PWR assemblies emplaced in boreholes in the floors of tunnels (KBS-3 concept), a 12-assembly waste package emplaced in tunnels, and a 32-assembly dual purpose canister emplaced in tunnels. In addition, three failure scenarios were suggested for future use: a nominal scenario involving corrosion of the waste package in the tunnel emplacement concepts, a manufacturing defect scenario applicable to the KBS-3 concept, and a disruptive glaciation scenario applicable to both emplacement concepts. The computational approaches required to analyze EBS failure and transport processes in a crystalline rock repository are similar to those of argillite/shale, with the most significant difference being that the EBS in a crystalline rock repository will likely experience highly heterogeneous flow rates, which should be represented in the model. The computational approaches required to analyze radionuclide transport in the natural system are very different because of the highly channelized nature of fracture flow. Computational workflows tailored to crystalline rock based on discrete transport pathways extracted from discrete fracture network models are recommended.

  13. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  14. Wetting hysteresis induced by nanodefects.

    Science.gov (United States)

    Giacomello, Alberto; Schimmele, Lothar; Dietrich, Siegfried

    2016-01-19

    Wetting of actual surfaces involves diverse hysteretic phenomena stemming from ever-present imperfections. Here, we clarify the origin of wetting hysteresis for a liquid front advancing or receding across an isolated defect of nanometric size. Various kinds of chemical and topographical nanodefects, which represent salient features of actual heterogeneous surfaces, are investigated. The most probable wetting path across surface heterogeneities is identified by combining, within an innovative approach, microscopic classical density functional theory and the string method devised for the study of rare events. The computed rugged free-energy landscape demonstrates that hysteresis emerges as a consequence of metastable pinning of the liquid front at the defects; the barriers for thermally activated defect crossing, the pinning force, and hysteresis are quantified and related to the geometry and chemistry of the defects allowing for the occurrence of nanoscopic effects. The main result of our calculations is that even weak nanoscale defects, which are difficult to characterize in generic microfluidic experiments, can be the source of a plethora of hysteretical phenomena, including the pinning of nanobubbles.

  15. Wetting of flexible fibre arrays.

    Science.gov (United States)

    Duprat, C; Protière, S; Beebe, A Y; Stone, H A

    2012-02-23

    Fibrous media are functional and versatile materials, as demonstrated by their ubiquity both in natural systems such as feathers and adhesive pads and in engineered systems from nanotextured surfaces to textile products, where they offer benefits in filtration, insulation, wetting and colouring. The elasticity and high aspect ratios of the fibres allow deformation under capillary forces, which cause mechanical damage, matting self-assembly or colour changes, with many industrial and ecological consequences. Attempts to understand these systems have mostly focused on the wetting of rigid fibres or on elastocapillary effects in planar geometries and on a fibre brush withdrawn from an infinite bath. Here we consider the frequently encountered case of a liquid drop deposited on a flexible fibre array and show that flexibility, fibre geometry and drop volume are the crucial parameters that are necessary to understand the various observations referred to above. We identify the conditions required for a drop to remain compact with minimal spreading or to cause a pair of elastic fibres to coalesce. We find that there is a critical volume of liquid, and, hence, a critical drop size, above which this coalescence does not occur. We also identify a drop size that maximizes liquid capture. For both wetting and deformation of the substrates, we present rules that are deduced from the geometric and material properties of the fibres and the volume of the drop. These ideas are applicable to a wide range of fibrous materials, as we illustrate with examples for feathers, beetle tarsi, sprays and microfabricated systems.

  16. Wet water glass production plant

    Directory of Open Access Journals (Sweden)

    Stanković Mirjana S.

    2003-01-01

    Full Text Available The IGPC Engineering Department designed basic projects for a wet hydrate dissolution plant, using technology developed in the IGPC laboratories. Several projects were completed: technological, machine, electrical, automation. On the basis of these projects, a production plant of a capacity of 75,000 t/y was manufactured, at "Zeolite Mira", Mira (VE, Italy, in 1997. and 1998, increasing detergent zeolite production, from 50,000 to 100,000 t/y. Several goals were realized by designing a wet hydrate dissolution plant. The main goal was increasing the detergent zeolite production. The technological cycle of NaOH was closed, and no effluents emitted, and there is no pollution (except for the filter cake. The wet water glass production process is fully automatized, and the product has uniform quality. The production process can be controlled manually, which is necessary during start - up, and repairs. By installing additional process equipment (centrifugal pumps and heat exchangers technological bottlenecks were overcome, and by adjusting the operation of autoclaves, and water glass filters and also by optimizing the capacities of process equipment.

  17. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    Energy Technology Data Exchange (ETDEWEB)

    Hajji, M., E-mail: mhajji2001@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia); Institut Supérieur d’Electronique et de Communication de Sfax, route Menzel Chaker Km 0.5, BP 868, Sfax 3018 (Tunisia); Khalifa, M.; Slama, S. Ben; Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia)

    2013-11-01

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt{sub 0} followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  18. Enhanced conversion efficiency and surface hydrophobicity of nano-roughened Teflon-like film coated poly-crystalline Si solar cells.

    Science.gov (United States)

    Lin, Gong-Ru; Meng, Fan-Shuen; Pai, Yi-Hao; Lin, Yung-Hsiang

    2012-03-21

    Nano-roughened Teflon-like film coated poly-crystalline Si photovoltaic solar cells (PVSCs) with enhanced surface hydrophobicity and conversion efficiency (η) are characterized and compared with those coated by a Si nanorod array or a standard SiN anti-reflection layer. The Teflon-like film coated PVSC surface reveals a water contact angle increasing from 89.3° to 96.2° as its thickness enlarges from 22 to 640 nm, which is much larger than those of the standard and Si nanorod array coated PVSC surfaces (with angles of 55.6° and 32.8°, respectively). After nano-roughened Teflon-like film passivation, the PVSC shows a comparable η(10.89%) with the standard SiN coated PVSC (η = 11.39%), while the short-circuit current (I(SC)) is slightly reduced by 2% owing to the slightly decreased UV transmittance and unchanged diode performance. In contrast, the Si nanorod array may offer an improved surface anti-reflection with surface reflectance decreasing from 30% to 5% at a cost of optical scattering and randomized deflection, which simultaneously decrease the optical transmittance from 15% to 3% in the visible region without improving hydrophobicity and conversion efficiency. The Si nanorod array covered PVSC with numerous surface dangling bonds induced by 1 min wet-etching, which greatly reduces the open-circuit voltage (V(OC)) by 10-15% and I(SC) by 30% due to the reduced shunt resistance from 3 to 0.24 kΩ. The nano-scale roughened Teflon-like film coated on PVSC has provided better hydrophobicity and conversion efficiency than the Si nanorod array covered PVSC, which exhibits superior water repellant performance and comparable conversion efficiency to be one alternative approach for self-cleaning PVSC applications.

  19. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  20. E-beam inspection of EUV mask defects: To etch or not to etch?

    Science.gov (United States)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10× improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  1. European wet deposition maps based on measurements

    NARCIS (Netherlands)

    Leeuwen EP van; Erisman JW; Draaijers GPJ; Potma CJM; Pul WAJ van; LLO

    1995-01-01

    To date, wet deposition maps on a European scale have been based on long-range transport model results. For most components wet deposition maps based on measurements are only available on national scales. Wet deposition maps of acidifying components and base cations based on measurements are needed

  2. European wet deposition maps based on measurements

    NARCIS (Netherlands)

    Leeuwen EP van; Erisman JW; Draaijers GPJ; Potma CJM; Pul WAJ van; LLO

    1995-01-01

    To date, wet deposition maps on a European scale have been based on long-range transport model results. For most components wet deposition maps based on measurements are only available on national scales. Wet deposition maps of acidifying components and base cations based on measurements are needed

  3. 49 CFR 173.159 - Batteries, wet.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Batteries, wet. 173.159 Section 173.159... Batteries, wet. (a) Electric storage batteries, containing electrolyte acid or alkaline corrosive battery fluid (wet batteries), may not be packed with other materials except as provided in paragraphs (g)...

  4. Phase diagrams of binary crystalline-crystalline polymer blends.

    Science.gov (United States)

    Matkar, Rushikesh A; Kyu, Thein

    2006-08-17

    A thermodynamically self-consistent theory has been developed to establish binary phase diagrams for two-crystalline polymer blends by taking into consideration all interactions including amorphous-amorphous, crystal-amorphous, amorphous-crystal, and crystal-crystal interactions. The present theory basically involves combination of the Flory-Huggins free energy for amorphous-amorphous isotropic mixing and the Landau free energy of polymer solidification (e.g., crystallization) of the crystalline constituents. The self-consistent solution via minimization of the free energy of the mixture affords determination of eutectic, peritectic, and azeotrope phase diagrams involving various coexistence regions such as liquid-liquid, liquid-solid, and solid-solid coexistence regions bound by liquidus and solidus lines. To validate the present theory, the predicted eutectic phase diagrams have been compared with the reported experimental binary phase diagrams of blends such as polyethylene fractions as well as polycaprolactone/trioxane mixtures.

  5. Effect of dimethyl sulfoxide on bond durability of fiber posts cemented with etch-and-rinse adhesives

    Science.gov (United States)

    Shafiei, Fereshteh; Sarafraz, Zahra

    2016-01-01

    PURPOSE This study was undertaken to investigate whether use of an adhesive penetration enhancer, dimethyl sulfoxide (DMSO), improves bond stability of fiber posts to root dentin using two two-step etch-and-rinse resin cements. MATERIALS AND METHODS Forty human maxillary central incisor roots were randomly divided into 4 groups after endodontic treatment and post space preparation, based on the fiber post/cement used with and without DMSO pretreatment. Acid-etched root dentin was treated with 5% DMSO aqueous solution for 60 seconds or with distilled water (control) prior to the application of Excite DSC/Variolink II or One-Step Plus/Duo-link for post cementation. After micro-slicing the bonded root dentin, push-out bond strength (P-OBS) test was performed immediately or after 1-year of water storage in each group. Data were analyzed using three-way ANOVA and Student's t-test (α=.05). RESULTS A significant effect of time, DMSO treatment, and treatment × time interaction were observed (P.05). CONCLUSION DMSO-wet bonding might be a beneficial method in preserving the stability of resin-dentin bond strength over time when fiber post is cemented with the tested etch-and-rinse adhesive cements. PMID:27555893

  6. Patterned Platinum Etching Studies in an Argon High Density Plasma

    Science.gov (United States)

    Delprat, Sébastien; Chaker, Mohamed; Margot, Joëlle; Pépin, Henri; Tan, Liang; Smy, Tom

    1998-10-01

    A high-density surface-wave Ar plasma operated in the low pressure regime is used to study pure physical etching characteristics of platinum thin films. The platinum samples are RF biased so as to obtain a maximum DC self-bias voltage of 150 V. The sputter-etching characteristics are investigated as a function of the magnetic field intensity, the self-bias voltage and the gas pressure. At 1 mtorr, the etch rate is found to be a unique linear function of both the self-bias voltage and the ion density, independently of the magnetic field intensity value. However, even though the ion density increases, the etch rate is found to decrease with increasing pressure. In the low pressure regime, etch rates as high as 2000 A/min are obtained with a good selectivity over resist. Without any optimization of the etching process, we were able to etch 0.5 micron Pt trenches, 0.6 micron thick yielding fence-free profiles and sidewall angles (75º) that already meets the present industrial requirements of NVRAM technology.

  7. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi...... of the change in free energy of adsorption, the Pourbaix diagram, the electrochemical double- layer thickness and silicon dopant type, and concentration. (C) 2004 The Electrochemical Society.......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  8. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  9. Synthesis of Nanorods of Crystalline Co304 Using Carbon Nanotubes as Templates

    Institute of Scientific and Technical Information of China (English)

    WU,Hua-Qiang(吴华强); SHAO,Ming-Wang(邵明望); WEI,Xian-Wen(魏先文); GU,Jia-Shan(顾家山); QU,Mei-Zhen(瞿美臻)

    2002-01-01

    Synthesis of cobalt oxide (Co3O4) nanorods was achieved by templating against carbon nanotubes via wet chemical technique. The products with crystalline structure were mainly composed of Co3O4 nanorods with diameters in the range of ca. 75-100 mn and lengths in the range of 0.12-1μm, and were characterized by XRD, TEM, SAED and HRTEM.

  10. Sealing effectiveness of etch-and-rinse vs self-etching adhesives after water aging: influence of acid etching and NaOCl dentin pretreatment.

    Science.gov (United States)

    Monticelli, Francesca; Toledano, Manuel; Silva, Ana Simoes; Osorio, Estrella; Osorio, Raquel

    2008-06-01

    To determine the marginal leakage of Class V restorations bonded with etch-and-rinse and self-etching adhesives applied after different dentin pretreatments over a maximum storage time of 24 months. Standardized mixed Class V cavities (5 mm x 3 mm and 2 mm deep) were cut on the buccal and lingual surfaces of 180 human molars. Two self-etching adhesive systems, Adper Prompt L-Pop (3M ESPE) and Clearfil SE Bond (Kuraray), and one etch-and-rinse bonding agent (One Step, Bisco) were applied as follows: 1. according to manufacturers' instructions; 2. after 37% H3PO4 etching for 15 s; 3. after 37% H3PO4 etching for 15 s and 5% NaOCl aq application for 2 min. Teeth were stored for 24 h, 6, 12, and 24 months in saline solution at 37 degrees C before being stained in 0.5% solution of basic fuchsine. Dye penetration was scored on a 0 to 3 ordinal scale and analyzed with the Kruskal-Wallis H test (p < 0.05), Mann-Whitney U-test (p < 0.01), and Wilcoxon paired test (p < 0.05). Significant differences exist after using the tested adhesives at dentin and enamel margins. Adhesive type and substrate pretreatment had a significant effect on the long-term sealing of Class V restorations, and aging increased leakage overtime. The extent of leakage at the enamel margins was lower than that at dentin margins. One Step recorded the best results after 24 months. Optimal adhesion of restorative materials to enamel and dentin is hampered by a reduction in marginal seal over time. Alternative dentinal treatments (etching or collagen removal) might increase bonding efficacy, depending on the adhesive system used.

  11. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  12. Photocontrollable liquid-crystalline actuators

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Haifeng [Top Runner Incubation Center for Academia-Industry Fusion and Department of Materials and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188 (Japan); Ikeda, Tomiki [Chemical Resources Laboratory, Tokyo Institute of Technology, R1-11, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2011-05-17

    Coupling photochromic molecules with liquid crystalline (LC) materials enables one to reversibly photocontrol unique LC features such as phase transition, photoalignment, and molecular cooperative motion. LC elastomers show photomechanical and photomobile properties, directly converting light energy into mechanical energy. In well-defined LC block copolymers, regular patternings of nanostructures in macroscopic scales are fabricated by photo-manipulation of LC actuators. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Liquid Crystalline Esters of Dibenzophenazines

    Directory of Open Access Journals (Sweden)

    Kevin John Anthony Bozek

    2015-01-01

    Full Text Available A series of esters of 2,3,6,7-tetrakis(hexyloxydibenzo[a,c]phenazine-11-carboxylic acid was prepared in order to probe the effects of the ester groups on the liquid crystalline behavior. These compounds exhibit columnar hexagonal phases over broad temperature ranges. Variations in chain length, branching, terminal groups, and the presence of cyclic groups were found to modify transition temperatures without substantially destabilizing the mesophase range.

  14. EXAFS studies of crystalline materials

    Energy Technology Data Exchange (ETDEWEB)

    Knapp, G.S.; Georgopoulos, P.

    1982-01-01

    The application of extended x-ray absorption fine structure (EXAFS) technique to the study of crystalline materials is discussed, and previously published work on the subject is reviewed with 46 references being cited. The theory of EXAFS, methods of data analysis, and the experimental techniques, including those based on synchrotron and laboratory facilities are all discussed. Absorption and fluorescence methods of detecting EXAFS also receive attention. (BLM)

  15. Wet Work and Barrier Function.

    Science.gov (United States)

    Fartasch, Manigé

    2016-01-01

    Wet work defined as unprotected exposure to humid environments/water; high frequencies of hand washing procedures or prolonged glove occlusion is believed to cause irritant contact dermatitis in a variety of occupations. This review considers the recent studies on wet-work exposure and focuses on its influence on barrier function. There are different methods to study the effect of wet work on barrier function. On the one hand, occupational cohorts at risk can be monitored prospectively by skin bioengineering technology and clinical visual scoring systems; on the other hand, experimental test procedures with defined application of water, occlusion and detergents are performed in healthy volunteers. Both epidemiological studies and the results of experimental procedures are compared and discussed. A variety of epidemiological studies analyze occupational cohorts at risk. The measurement of transepidermal water loss, an indicator of the integrity of the epidermal barrier, and clinical inspection of the skin have shown that especially the frequencies of hand washing and water contact/contact to aqueous mixtures seem to be the main factors for the occurrence of barrier alterations. On the other hand, in a single cross-sectional study, prolonged glove wearing (e.g. occlusion for 6 h per shift in clean-room workers) without exposure to additional hazardous substances seemed not to affect the skin negatively. But regarding the effect of occlusion, there is experimental evidence that previously occluded skin challenged with sodium lauryl sulfate leads to an increased susceptibility to the irritant with an aggravation of the irritant reaction. These findings might have relevance for the real-life situation in so far as after occupational glove wearing, the skin is more susceptible to potential hazards to the skin even during leisure hours.

  16. Inelastic deformation in crystalline rocks

    Science.gov (United States)

    Rahmani, H.; Borja, R. I.

    2011-12-01

    The elasto-plastic behavior of crystalline rocks, such as evaporites, igneous rocks, or metamorphic rocks, is highly dependent on the behavior of their individual crystals. Previous studies indicate that crystal plasticity can be one of the dominant micro mechanisms in the plastic deformation of crystal aggregates. Deformation bands and pore collapse are examples of plastic deformation in crystalline rocks. In these cases twinning within the grains illustrate plastic deformation of crystal lattice. Crystal plasticity is governed by the plastic deformation along potential slip systems of crystals. Linear dependency of the crystal slip systems causes singularity in the system of equations solving for the plastic slip of each slip system. As a result, taking the micro-structure properties into account, while studying the overall behavior of crystalline materials, is quite challenging. To model the plastic deformation of single crystals we use the so called `ultimate algorithm' by Borja and Wren (1993) implemented in a 3D finite element framework to solve boundary value problems. The major advantage of this model is that it avoids the singularity problem by solving for the plastic slip explicitly in sub steps over which the stress strain relationship is linear. Comparing the results of the examples to available models such as Von Mises we show the significance of considering the micro-structure of crystals in modeling the overall elasto-plastic deformation of crystal aggregates.

  17. ADVANCES IN LIQUID CRYSTALLINE POLYESTERS

    Institute of Scientific and Technical Information of China (English)

    W. J. Jackson

    1992-01-01

    Advances have been made in understanding the interactions of composition, molecular weight,liquid crystallinity, orientation, and three-dimensional crystallinity on the properties of injection-molded and melt-spun liquid crystalline polyesters (LCP's). Two classes of potentially low-cost LCP's were compared : (1) semiflexible LCP's prepared from 1,6-hexanediol and the dimethyl ester of either trans-4, 4'-stilbenedicarboxylic acid or 4.4 ′-biphenyldicarboxylic acid and (2) all-aromatic LCP's prepared from terephthalic acid, 2, 6-naphthalenedicarboxylic acid, the diacetate of hydroquinone,and the acetate of p-hydroxybenzoic acid. The effects of composition on the plastic properties of the 4-component all-aromatic LCP's were determined with the aid of a 3 × 3 factorial statistically designed experiment, the generation of equations with a computer program, and the plotting of three-dimensional figures and contour diagrams. The effects of absolute molecular weight (Mw) on the tensile strengths of the semiflexible LCP's and one of the all-aromatic LCP's having an excellent balance of plastic properties were also compared, and it was observed that the semiflexible LCP's required Mw's about 4 times higher than the all-aromatic LCP to attain a given strength. Persistence lengths and molecular modeling were used to explain these differences.

  18. Biocompatibility of crystalline opal nanoparticles

    Directory of Open Access Journals (Sweden)

    Hernández-Ortiz Marlen

    2012-10-01

    Full Text Available Abstract Background Silica nanoparticles are being developed as a host of biomedical and biotechnological applications. For this reason, there are more studies about biocompatibility of silica with amorphous and crystalline structure. Except hydrated silica (opal, despite is presents directly and indirectly in humans. Two sizes of crystalline opal nanoparticles were investigated in this work under criteria of toxicology. Methods In particular, cytotoxic and genotoxic effects caused by opal nanoparticles (80 and 120 nm were evaluated in cultured mouse cells via a set of bioassays, methylthiazolyldiphenyl-tetrazolium-bromide (MTT and 5-bromo-2′-deoxyuridine (BrdU. Results 3T3-NIH cells were incubated for 24 and 72 h in contact with nanocrystalline opal particles, not presented significant statistically difference in the results of cytotoxicity. Genotoxicity tests of crystalline opal nanoparticles were performed by the BrdU assay on the same cultured cells for 24 h incubation. The reduction of BrdU-incorporated cells indicates that nanocrystalline opal exposure did not caused unrepairable damage DNA. Conclusions There is no relationship between that particles size and MTT reduction, as well as BrdU incorporation, such that the opal particles did not induce cytotoxic effect and genotoxicity in cultured mouse cells.

  19. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  20. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  1. Wetting properties of nanostructured surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Canut, S. [Laboratoire de Physique de la Matiere Condensee et Nanostructures (UMR CNRS 5586), Universite Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France)]. E-mail: ramos@lpmcn.univ-lyon1.fr

    2006-04-15

    Swift heavy ion irradiation is a powerful tool to tailor surfaces under controlled conditions at a nanometric scale. The growing importance of nanostructured surfaces for a wide variety of applications and fundamental investigations is now well established. In this paper I will mainly discuss the interest of such surfaces for investigations concerning solid-liquid interfaces. The role played by topographical defects on wetting properties of solid surfaces, and both the dissipative and the confinement effects on the interface will be demonstrated by simple examples.

  2. Single-metalloprotein wet biotransistor

    Science.gov (United States)

    Alessandrini, Andrea; Salerno, Marco; Frabboni, Stefano; Facci, Paolo

    2005-03-01

    Metalloproteins are redox molecules naturally shuttling electrons with high efficiency between molecular partners. As such, they are candidates of choice for bioelectronics. In this work, we have used bacterial metalloprotein azurin, hosted in a nanometer gap between two electrically biased gold electrodes, to demonstrate an electrochemically gated single-molecule transistor operating in an aqueous environment. Gold-chemisorbed azurin shows peaks in tunneling current upon changing electrode potential and a related variation in tunneling barrier transparency which can be exploited to switch an electron current through it. These results suggest the wet approach to molecular electronics as a viable method for exploiting electron transfer of highly specialized biomolecules.

  3. Silicon on insulator achieved using electrochemical etching

    Science.gov (United States)

    McCarthy, A.M.

    1997-10-07

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

  4. The role of etching in bonding to enamel: a comparison of self-etching and etch-and-rinse adhesive systems.

    Science.gov (United States)

    Erickson, Robert L; Barkmeier, Wayne W; Latta, Mark A

    2009-11-01

    Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength measurements were made for all the systems. The hypothesis was that similar morphology would result in similar bond strength assuming micro-mechanical bonding is the mechanism of adhesion. Three specimens were prepared on polished (4000 grit) human enamel for each adhesive system to examine etch and resin infiltration morphology by SEM. For the latter, the adhesive systems were bonded using recommended methods and the enamel was dissolved in acid to reveal the resin. The etch patterns for the SEA systems were determined by rinsing off the material with water and acetone. Polished (4000 grit) human enamel was used with each adhesive system to determine 24-h resin composite to enamel shear bond strengths (SBS). A minimum of 10 specimens were used for each group. Data were analyzed by a one factor ANOVA and Fisher's PLSD post hoc test. The SBS to polished enamel for two of the three SEA systems were statistically significantly greater (penamel.

  5. Mold management of wetted carpet.

    Science.gov (United States)

    Ong, Kee-Hean; Dixit, Anupma; Lewis, Roger D; MacDonald Perkins, Maureen; Backer, Denis; Condoor, Sridhar; Emo, Brett; Yang, Mingan

    2014-01-01

    This study evaluated the growth and removal of fungi on wetted carpet using newly designed technologies that rely on physical principles of steam, heat, and fluid flow. Sixty samples of carpet were embedded with heat-treated house dust, followed by embedding, wearing with a hexapod, and wetting. Samples were inoculated using a liquid suspension of Cladosporium sphaerospermum prior to placement over a water-saturated foam pad. Incubation times were 24 hr, 7 days, and 30 days. Cleaning was performed using three methods; high-flow hot water extraction, hot water and detergent, and steam. Fungal loading increased from approximately 1500 colony forming units per area (CFU/cm(2)) in 24 hr to a maximum of approximately 10,200 CFU/cm(2) after 7 days with a slight decline to 9700 CFU/cm(2) after 30 days incubation. Statistically significant differences were found among all three methods for removal of fungi for all three time periods (p Steam-vapor was significantly better than the alternative methods (p steam has a consistent fungal removal rate, the detergent and high-flow, hot water methods decline in efficiency with increasing incubation time.

  6. Elucidating the mysteries of wetting.

    Energy Technology Data Exchange (ETDEWEB)

    Webb, Edmund Blackburn, III (,; ); Bourdon, Christopher Jay; Grillet, Anne Mary; Sackinger, Philip A.; Grest, Gary Stephen; Emerson, John Allen; Ash, Benjamin Jesse; Heine, David R.; Brooks, Carlton, F.; Gorby, Allen D.

    2005-11-01

    Nearly every manufacturing and many technologies central to Sandia's business involve physical processes controlled by interfacial wetting. Interfacial forces, e.g. conjoining/disjoining pressure, electrostatics, and capillary condensation, are ubiquitous and can surpass and even dominate bulk inertial or viscous effects on a continuum level. Moreover, the statics and dynamics of three-phase contact lines exhibit a wide range of complex behavior, such as contact angle hysteresis due to surface roughness, surface reaction, or compositional heterogeneities. These thermodynamically and kinetically driven interactions are essential to the development of new materials and processes. A detailed understanding was developed for the factors controlling wettability in multicomponent systems from computational modeling tools, and experimental diagnostics for systems, and processes dominated by interfacial effects. Wettability probed by dynamic advancing and receding contact angle measurements, ellipsometry, and direct determination of the capillary and disjoining forces. Molecular scale experiments determined the relationships between the fundamental interactions between molecular species and with the substrate. Atomistic simulations studied the equilibrium concentration profiles near the solid and vapor interfaces and tested the basic assumptions used in the continuum approaches. These simulations provide guidance in developing constitutive equations, which more accurately take into account the effects of surface induced phase separation and concentration gradients near the three-phase contact line. The development of these accurate models for dynamic multicomponent wetting allows improvement in science based engineering of manufacturing processes previously developed through costly trial and error by varying material formulation and geometry modification.

  7. Erbium doped stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Diaz-Herrera, B. [Departamento de Energia Fotovoltaica, Instituto Tecnologico de Energias Renovables (ITER), Poligono Industrial de Granadilla, 38611 S/C Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain)], E-mail: rglemus@ull.es; Mendez-Ramos, J.; Rodriguez, V.D. [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Martinez-Duart, J.M. [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Cantoblanco, Madrid (Spain)

    2008-01-15

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO{sub 3} solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er{sup 3+} ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.

  8. Marginal permeability of self-etch and total-etch adhesive systems.

    Science.gov (United States)

    Owens, Barry M; Johnson, William W; Harris, Edward F

    2006-01-01

    This study evaluated microleakage in vitro of self-etch and multi-step, total-etch adhesive systems. Ninety-six extracted non-carious human molars were randomly assigned to eight groups (n=12) and restored with different adhesive systems: Optibond Solo Plus, iBond, Adper Prompt L-Pop, Xeno III, Simplicity, Nano-Bond, Adper Scotchbond Multi-Purpose and Touch & Bond. Each group was treated following the manufacturer's instructions. Class V cavities were prepared on the facial or lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (dentin). The teeth were restored with Z-100 resin composite. After polishing with Sof-Lex disks, the teeth were thermocycled for 1000 cycles and coated with nail varnish to within 1.0 mm of the restoration. The teeth were stained in 1% methylene blue dye for 24 hours and sectioned from the facial to lingual surface. Dye penetration (microleakage) was examined with a 20x binocular microscope. Enamel and dentin margin leakage was scored on a 0 to 3 ordinal scale. Data were analyzed using Kruskal-Wallis Analysis of Variance and Mann-Whitney U tests. Comparison of the adhesive groups at the enamel margin revealed: 1) Adper Scotchbond Multi-Purpose exhibited significantly less leakage than the other adhesive groups (except iBond); 2) among the self-etch adhesive groups, iBond exhibited significantly less leakage than Nano-Bond and 3) the other adhesive groups clustered intermediately. In contrast, there were no significant differences among the adhesive groups when the dentin margin was evaluated. A Wilcoxin signed rank test showed significantly less leakage at the enamel margins compared to the dentin margins of the eight adhesive systems tested. All data were submitted to statistical analysis at p<0.05 level of significance.

  9. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  10. Relationship between mechanical properties of one-step self-etch adhesives and water sorption.

    Science.gov (United States)

    Hosaka, Keiichi; Nakajima, Masatoshi; Takahashi, Masahiro; Itoh, Shima; Ikeda, Masaomi; Tagami, Junji; Pashley, David H

    2010-04-01

    The purpose of this study was to evaluate the relationship between changes in the modulus of elasticity and ultimate tensile strength of one-step self-etch adhesives, and their degree of water sorption. Five one-step self-etch adhesives, Xeno IV (Dentsply Caulk), G Bond (GC Corp.), Clearfil S3 Bond (Kuraray Medical Inc.), Bond Force (Tokuyama Dental Corp.), and One-Up Bond F Plus (Tokuyama Dental Corp.) were used. Ten dumbelled-shaped polymers of each adhesive were used to obtain the modulus of elasticity by the three-point flexural bending test and the ultimate tensile strength by microtensile testing. The modulus of elasticity and the ultimate tensile strength were measured in both dry and wet conditions before/after immersion in water for 24h. Water sorption was measured, using a modification of the ISO-4049 standard. Each result of the modulus of elasticity and ultimate tensile strength was statistically analyzed using a two-way ANOVA and the result of water sorption was statistically analyzed using a one-way ANOVA. Regression analyses were used to determine the correlations between the modulus of elasticity and the ultimate tensile strength in dry or wet states, and also the percent decrease in these properties before/after immersion of water vs. water sorption. In the dry state, the moduli of elasticity of the five adhesive polymers varied from 948 to 1530 MPa, while the ultimate tensile strengths varied from 24.4 to 61.5 MPa. The wet specimens gave much lower moduli of elasticity (from 584 to 1073 MPa) and ultimate tensile strengths (from 16.5 to 35.0 MPa). Water sorption varied from 32.1 to 105.8 g mm(-3). The moduli of elasticity and ultimate tensile strengths of the adhesives fell significantly after water-storage. Water sorption depended on the constituents of the adhesive systems. The percent decreases in the ultimate tensile strengths of the adhesives were related to water sorption, while the percent reductions in the moduli of elasticity of the

  11. Assessment of formulation robustness for nano-crystalline suspensions using failure mode analysis or derisking approach.

    Science.gov (United States)

    Nakach, Mostafa; Authelin, Jean-René; Voignier, Cecile; Tadros, Tharwat; Galet, Laurence; Chamayou, Alain

    2016-06-15

    The small particle size of nano-crystalline suspensions can be responsible for their physical instability during drug product preparation (downstream processing), storage and administration. For that purpose, the commercial formulation needs to be sufficiently robust to various triggering conditions, such as ionic strength, shear rate, wetting/dispersing agent desorption by dilution, temperature and pH variation. In our previous work we described a systematic approach to select the suitable wetting/dispersant agent for the stabilization of nano-crystalline suspension. In this paper, we described the assessment of the formulation robustness (stabilized using a mixture of sodium dodecyl sulfate (SDS) and polyvinylpyrrolidone (PVP) and) by measuring the rate of perikinetic (diffusion-controlled) and orthokinetic (shear-induced) aggregation as a function of ionic strength, temperature, pH and dilution. The results showed that, using the SDS/PVP system, the critical coagulation concentration is about five times higher than that observed in the literature for suspension colloidaly stable at high concentration. The nano-suspension was also found to be very stable at ambient temperature and at different pH conditions. Desorption test confirmed the high affinity between API and wetting/dispersing agent. However, the suspension undergoes aggregation at high temperature due to the desorption of the wetting/dispersing agent and disaggregation of SDS micelles. Furthermore, aggregation occurs at very high shear rate (orhokinetic aggregation) by overcoming the energy barrier responsible for colloidal stability of the system.

  12. Polishing of quartz by rapid etching in ammonium bifluoride.

    Science.gov (United States)

    Vallin, Orjan; Danielsson, Rolf; Lindberg, Ulf; Thornell, Greger

    2007-07-01

    The etch rate and surface roughness of polished and lapped AT-cut quartz subjected to hot (90, 110, and 130 degrees C), concentrated (50, 65, 80 wt %) ammonium bi-fluoride have been investigated. Having used principal component analysis to verify experimental solidity and analyze data, we claim with confidence that this parameter space does not, as elsewhere stated, allow for a polishing effect or even a preserving setting. Etch rates were found to correlate well, and possibly logarithmically, with temperature except for the hottest etching applied to lapped material. Roughness as a function of temperature and concentration behaved well for the lapped material, but lacked systematic variation in the case of the polished material. At the lowest temperature, concentration had no effect on etch rate or roughness. Future efforts are targeted at temperatures and concentrations closer to the solubility limit.

  13. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  14. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  15. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  16. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) an

  17. A survey on the reactive ion etching of silicon in microtechnology

    NARCIS (Netherlands)

    Jansen, Henricus V.; Gardeniers, Johannes G.E.; de Boer, Meint J.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system

  18. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  19. Etching zircon age standards for fission-track analysis

    Energy Technology Data Exchange (ETDEWEB)

    Garver, J.I. E-mail: garverj@union.edu

    2003-02-01

    Nineteen laboratories that routinely measure fission-track ages in zircon were surveyed as to their principal methodology used for track revelation using chemical attack and counting procedures. The survey results show the following: (a) researchers in most labs count fission tracks with a optical microscope using at a total magnification between 1250x and 1600x ({approx}80%) with about an equal number using either a dry or oil objective (b) the majority of laboratories etch zircon with a KOH:NaOH eutectic heated in an oven between temperatures of 210 deg. C and 230 deg. C; (c) ag standards in zircon analysis do not have uniformly accepted etch times. Etching times for the widely used 28 Ma Fish Canyon Tuff (FCT) (4-60 h) and the lesser-used 16 Ma Buluk Tuff (13-55 h) vary significantly from lab to lab. Between {approx}220 deg. C and 230 deg. C, the principal range fo etching times for the FCT is between 20 and 30 h, and the mode for the Buluk Tuff is between 30 and 55 h. Three or fewer labs report etching times for the Tardee Rhyolite (22-40 h), the Bishop Tuff (10-46 h), and the Mt. Dromedary Banite (5-24 h). Variation in etching times may result in a bias in U-content which affects counting statistics. If etching is successful, strict criteria must be followed to ensure that the analyst only counts well-etched grains and that all tracks are successfully identified.

  20. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  1. Dry etching of single crystal PMN-PT piezoelectric material.

    OpenAIRE

    Agnus, Joël; Alexandru Ivan, Ioan; Queste, Samuel

    2011-01-01

    International audience; During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.

  2. Wetting and Non-Wetting Models of Black Carbon Activation

    Science.gov (United States)

    Henson, B. F.; Laura, S.

    2006-12-01

    We present the results of recent modeling studies on the activation of black carbon (BC) aerosol to form cloud condensation nuclei (CCN). We use a model of BC activation based on a general modification of the Koehler equation for insoluble activation in which we introduce a term based on the activity of water adsorbed on the particle surface. We parameterize the model using the free energy of adsorption, a parameter directly comparable to laboratory measurements of water adsorption on carbon. Although the model of the water- surface interaction is general, the form of the activation equation that results depends upon a further model of the distribution of water on the particle. One possible model involves the symmetric growth of a water shell around the isoluble particle core (wetting). This model predicts upper and lower bounding curves for the activation supersaturation given by the range of water interaction energies from hydrophobic to hydrophilic which are in agreement with a large body of recent activation data. The resulting activation diameters are from 3 to 10 times smaller than activation of soluble particles of identical dry diameter. Another possible model involves an exluded liquid droplet growing in contact with the particle (non-wetting). The geometry of this model much more resembles classic assumptions of heterogeneous nucleation theory. This model can yield extremely high activation supersaturation as a function of diameter, as has been observed in some experiments, and enables calculations in agreement with some of these results. We discuss these two geometrical models of water growth, the different behaviors predicted by the resulting activation equation, and the means to determine which model of growth is appropriate for a given BC particle characterized by either water interaction energy or morphology. These simple models enable an efficient and physically reasonable means to calculate the activation of BC aerosol to form CCN based upon a

  3. Optimization of roughness, reflectance and photoluminescence for acid textured mc-Si solar cells etched at different HF/HNO{sub 3} concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Fundacion de Estudios de Economia Aplicada. Catedra Focus-Abengoa. Jorge Juan, 46, 28001 Madrid (Spain)], E-mail: rglemus@ull.es; Diaz-Herrera, B.; Marrero, N. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Mendez-Ramos, J.; Borchert, Dietmar [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Labour und Servicecentre, Institut fuer Solare Energiesysteme, Fraunhofer Institut, Auf der Reihe 2, 45884 Gelsenkirchen (Germany)

    2009-03-15

    The surface structure of multi-crystalline silicon (mc-Si) etched in HF/HNO{sub 3} at different HF/HNO{sub 3} concentrations is optimized for being applied in solar cells. The resulting texture, which determines the efficiency of solar cells, was characterized by means of scanning electron microscopy (SEM) and optical spectroscopy. The roughness of the surface increases and the reflectance decreases when the content of HNO{sub 3} in the etching solution is increased to a limit. The produced etched pits on the surface have been identified by SEM and the surface mean roughness has been characterized by atomic force microscopy (AFM). Also, depending on the concentration of the electrolyte, the mc-Si samples exhibit photoluminescence in the VIS range under UV excitation. The PL reveals the presence of nanocrystals on the surface of the etched samples. The surface structure is also optimized for an adequate placement of the metallic contact on top. Finally the solar cells were performed in order to investigate the dependence of the roughness, reflectance and photoluminescence to the solar efficiency.

  4. Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

    Science.gov (United States)

    Farrell, S.; Rao, Mulpuri V.; Brill, G.; Chen, Y.; Wijewarnasuriya, P.; Dhar, N.; Benson, J. D.; Harris, K.

    2013-11-01

    The morphology and classification of etch pits in molecular beam epitaxy-grown (211) HgCdTe/CdTe/Si layers were investigated using the Schaake and Benson etch pit density (EPD) etches. The two EPD etches were compared and shown to have a 1:1 correlation in the etch pits that were produced. Close examination of the shape of the etch pits via scanning electron microscopy shows that several distinguishable classifications of etch pits are revealed using both etches. Samples subjected to thermal cycle annealing (TCA) treatment show a nonuniform reduction in etch pit populations according to the classification defined in this study. In particular, a class of etch pits called "fish shaped" are completely absent after TCA and can account for up to one-third of the total reduction in EPD.

  5. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    Science.gov (United States)

    Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

    2009-02-01

    The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

  6. Low damage dry etch for III-nitride light emitters

    Science.gov (United States)

    Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

    2015-08-01

    We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

  7. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  8. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Science.gov (United States)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  9. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  10. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    Science.gov (United States)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  11. Self-etch primers and conventional acid-etch technique for orthodontic bonding: a systematic review and meta-analysis.

    Science.gov (United States)

    Fleming, Padhraig S; Johal, Ama; Pandis, Nikolaos

    2012-07-01

    The use of self-etch primers has increased steadily because of their time savings and greater simplicity; however, overall benefits and potential disadvantages and harms have not been assessed systematically. In this study, we reviewed randomized controlled trials to assess the risk of attachment failure, bonding time, and demineralization adjacent to attachments between 1-stage (self-etch) and 2-stage (acid etch) bonding in orthodontic patients over a minimum follow-up period of 12 months. Data sources were electronic databases including MEDLINE, EMBASE, the Cochrane Oral Health Group's Trials Register, and CENTRAL, without language restrictions. Unpublished literature was searched on ClinicalTrials.gov, the National Research Register, and Pro-Quest Dissertation Abstracts and Thesis database. Authors were contacted when necessary, and reference lists of the included studies were screened. Search terms included randomized controlled trial, controlled clinical trial, random allocation, double-blind method, single-blind method, orthodontics, self-etch, SEP, primer, and bonding agent. Randomized clinical trials directly comparing self-etch and acid-etch primers with respect to the predefined outcomes and including patients with full-arch, fixed, and bonded orthodontic appliances (not banded) with follow-up periods of at least 12 months were included. Using predefined forms, 2 authors undertook independent data extraction with conflict resolution by the third author. Randomized clinical trial quality assessment based on the Cochrane Risk of Bias tool was also used. Eleven studies met the inclusion criteria; 6 were excluded because of a high risk of bias. In total, 1721 brackets bonded with acid-etch and 1723 with self-etch primer techniques were included in the quantitative synthesis. Relatively low statistical and clinical heterogeneity was observed among the 5 randomized clinical trials (n = 3444 brackets) comparing acid-etch with self-etch primers. A random effects

  12. Drop splashing is independent of substrate wetting

    CERN Document Server

    Latka, Andrzej; Nagel, Sidney R; de Pablo, Juan J

    2016-01-01

    A liquid drop impacting a dry solid surface with sufficient kinetic energy will splash, breaking apart into numerous secondary droplets. This phenomenon shows many similarities to forced wetting, including the entrainment of air at the contact line. Because of these similarities and the fact that forced wetting has been shown to depend on the wetting properties of the surface, existing theories predict splashing to depend on wetting properties as well. However, using high-speed interference imaging we observe that wetting properties have no effect on splashing for various liquid-surface combinations. Additionally, by fully resolving the Navier-Stokes equations at length and time scales inaccessible to experiments, we find that the shape and motion of the air-liquid interface at the contact line are independent of wettability. We use these findings to evaluate existing theories and to compare splashing with forced wetting.

  13. Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

    OpenAIRE

    Prado,Mariana C.; Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C.

    2013-01-01

    Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing ...

  14. Bulk nano-crystalline alloys

    OpenAIRE

    T.-S. Chin; Lin, C. Y.; Lee, M.C.; R.T. Huang; S. M. Huang

    2009-01-01

    Bulk metallic glasses (BMGs) Fe–B–Y–Nb–Cu, 2 mm in diameter, were successfully annealed to become bulk nano-crystalline alloys (BNCAs) with α-Fe crystallite 11–13 nm in size. A ‘crystallization-and-stop’ model was proposed to explain this behavior. Following this model, alloy-design criteria were elucidated and confirmed successful on another Fe-based BMG Fe–B–Si–Nb–Cu, 1 mm in diameter, with crystallite sizes 10–40 nm. It was concluded that BNCAs can be designed in general by the proposed cr...

  15. Optimized wet clutches:simulation and tribotesting

    OpenAIRE

    2006-01-01

    Wet clutches are used in a variety of different machinery. Wet clutches and brakes are frequently used to distribute torque in vehicle drive-trains. The clutches can be located in e.g. automatic transmissions or limited slip differentials. Their frictional behavior is of great importance for the overall vehicle behavior and has to be thoroughly investigated when designing new wet clutch applications. Frictional behavior is normally investigated in test rigs where complete friction discs are t...

  16. The Wet-Dog Shake

    CERN Document Server

    Dickerson, Andrew; Bauman, Jay; Chang, Young-Hui; Hu, David

    2010-01-01

    The drying of wet fur is a critical to mammalian heat regulation. In this fluid dynamics video, we show a sequence of films demonstrating how hirsute animals to rapidly oscillate their bodies to shed water droplets, nature's analogy to the spin cycle of a washing machine. High-speed videography and fur-particle tracking is employed to determine the angular position of the animal's shoulder skin as a function of time. X-ray cinematography is used to track the motion of the skeleton. We determine conditions for drop ejection by considering the balance of surface tension and centripetal forces on drops adhering to the animal. Particular attention is paid to rationalizing the relationship between animal size and oscillation frequency required to self-dry.

  17. Externally Wetted Ionic Liquid Thruster

    Science.gov (United States)

    Lozano, P.; Martinez-Sanchez, M.; Lopez-Urdiales, J. M.

    2004-10-01

    This paper presents initial developments of an electric propulsion system based on ionic liquid ion sources (ILIS). Propellants are ionic liquids, which are organic salts with two important characteristics; they remain in the liquid state at room temperature and have negligible vapor pressure, thus allowing their use in vacuum. The working principles of ILIS are similar to those of liquid metal ion sources (LMIS), in which a Taylor cone is electrostatically formed at the tip of an externally wetted needle while ions are emitted directly from its apex. ILIS have the advantage of being able to produce negative ions that have similar masses than their positive counterparts with similar current levels. This opens up the possibility of achieving plume electrical neutrality without electron emitters. The possible multiplexing of these emitters is discussed in terms of achievable thrust density for applications other than micro-propulsion.

  18. Wet granular walkers and climbers

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Z S; Steinberger, A; Seemann, R; Herminghaus, S, E-mail: audrey.steinberger@ens-lyon.fr [Max Planck Institute for Dynamics and Self-Organization, Bunsenstrasse 10, D-37073 Goettingen (Germany)

    2011-05-15

    Mechanisms of locomotion in microscopic systems are of great interest not only for technological applications but also for the sake of understanding, and potentially harnessing, processes far from thermal equilibrium. Downscaling is a particular challenge and has led to a number of interesting concepts, including thermal ratchet systems and asymmetric swimmers. Here we present a granular ratchet system employing a particularly robust mechanism that can be implemented in various settings. The system consists of wetted spheres of different sizes that adhere to each other, and are subject to a symmetric oscillating, zero average external force field. An inherent asymmetry in the mutual force network leads to force rectification and hence to locomotion. We present a simple model that accounts for the observed behaviour, underscores its robustness and suggests a potential scalability of the concept.

  19. Wetting, superhydrophobicity, and icephobicity in biomimetic composite materials

    Science.gov (United States)

    Hejazi, Vahid

    data are collected in terms of oleophobicity especially when underwater applications are of interest. We develop models for four-phase rough interface of underwater oleophobicity and develop a novel approach to predict the CA of organic liquid on the rough surfaces immersed in water. We investigate wetting transition on a patterned surface in underwater systems, using a phase field model. We demonstrated that roughening on an immersed solid surface can drive the transition from Wenzel to Cassie-Baxter state. This discovery improves our understanding of underwater systems and their surface interactions during the wetting phenomenon and can be applied for the development of underwater oil-repellent materials which are of interest for various applications in the water industry, and marine devices. In chapter five, we experimentally and theoretically investigate the icephobicity of composite materials. A novel comprehensive definition of icephobicity, broad enough to cover a variety of situations including low adhesion strength, delayed ice crystallization, and bouncing is determined. Wetting behavior and ice adhesion properties of various samples are theoretically and experimentally compared. We conclude superhydrophobic surfaces are not necessarily icephobic. The models are tested against the experimental data to verify the good agreement between them. The models can be used for the design of novel superhydrophobic, oleophobic, omniphobic and icephobic composite materials. Finally we conclude that creating surface micro/nanostructures using mechanical abrasion or chemical etching as well as applying low energy materials are the most simple, inexpensive, and durable techniques to create superhydrophobic, oleophobic, and icephobic materials.

  20. Adhesive capability of total-etch, self-etch, and self-adhesive systems for fiber post cementation

    Science.gov (United States)

    Theodor, Y.; Koesmaningati, H.; Gita, F.

    2017-08-01

    The aim of this study was to analyze whether self-etch and self-adhesive systems are comparable to the total-etch system for fiber post cementation. This experimental laboratory study, which was approved by an ethics committee, was performed using 27 mandibular premolar teeth randomly divided into three groups. Fiber post cementation was done using three different adhesive systems. Specimens were prepared with a thickness of 5 mm, which was measured from the cervical to medial areas of the root, and stored for 24 h in saline solution at room temperature. A push-out test was performed using a universal testing machine (Shimidzu AG-5000E) with a crosshead speed of 0.5 mm/min. The results of one way ANOVA bivariate testing showed that the total-etch and self-etch systems have comparable adhesion capability (padhesive system has the lowest adhesion capability (p>0.05). With easier application, the self-etch system has a comparable adhesion capability to the total-etch system.

  1. Carbon nanotube fiber spun from wetted ribbon

    Science.gov (United States)

    Zhu, Yuntian T; Arendt, Paul; Zhang, Xiefei; Li, Qingwen; Fu, Lei; Zheng, Lianxi

    2014-04-29

    A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

  2. Genetics of Bietti Crystalline Dystrophy.

    Science.gov (United States)

    Ng, Danny S C; Lai, Timothy Y Y; Ng, Tsz Kin; Pang, Chi Pui

    2016-01-01

    Bietti crystalline dystrophy (BCD) is an inherited retinal degenerative disease characterized by crystalline deposits in the retina, followed by progressive atrophy of the retinal pigment epithelium (RPE), choriocapillaris, and photoreceptors. CYP4V2 has been identified as the causative gene for BCD. The CYP4V2 gene belongs to the cytochrome P450 superfamily and encodes for fatty acid ω-hydroxylase of both saturated and unsaturated fatty acids. The CYP4V2 protein is localized most abundantly within the endoplasmic reticulum in the RPE and is postulated to play a role in the physiological lipid recycling system between the RPE and photoreceptors to maintain visual function. Electroretinographic assessments have revealed progressive dysfunction of rod and cone photoreceptors in patients with BCD. Several genotypes have been associated with more severe phenotypes based on clinical and electrophysiological findings. With the advent of multimodal imaging with spectral domain optical coherence tomography, fundus autofluorescence, and adaptive optics scanning laser ophthalmoscopy, more precise delineation of BCD severity and progression is now possible, allowing for the potential future development of targets for gene therapy.

  3. Enamel Wetness Effects on Microshear Bond Strength of Different Bonding Agents (Adhesive Systems): An in vitro Comparative Evaluation Study.

    Science.gov (United States)

    Kulkarni, Girish; Mishra, Vinay K

    2016-05-01

    The purpose of this study was to compare the effect of enamel wetness on microshear bond strength using different adhesive systems. To evaluate microshear bond strength of three bonding agents on dry enamel; to evaluate microshear bond strength of three bonding agents on wet enamel; and to compare microshear bond strength of three different bonding agents on dry and wet enamel. Sixty extracted noncarious human premolars were selected for this study. Flat enamel surfaces of approximately 3 mm were obtained by grinding the buccal surfaces of premolars with water-cooled diamond disks. This study evaluated one etch-and-rinse adhesive system (Single Bond 2) and two self-etching adhesive systems (Clearfil SE Bond and Xeno-V). The specimens were divided into two groups (n = 30). Group I (dry) was air-dried for 30 seconds and in group II (wet) surfaces were blotted with absorbent paper to remove excess water. These groups were further divided into six subgroups (n = 10) according to the adhesives used. The resin composite, Filtek Z 250, was bonded to flat enamel surfaces that had been treated with one of the adhesives, following the manufacturer's instructions. After being stored in water at 37°C for 24 hours, bonded specimens were stressed in universal testing machine (Fig. 3) at a crosshead speed of 1 mm/min. The data were evaluated with one-way and two-way analysis of variance (ANOVA), t-test, and Tukey's Multiple Post hoc tests (a = 0.05). The two-way ANOVA and Tukey's Multiple Post hoc tests showed significant differences among adhesive systems, but wetness did not influence microshear bond strength (p = 0.1762). The one-way ANOVA and t-test showed that the all-in-one adhesive (Xeno-V) was the only material influenced by the presence of water on the enamel surface. Xeno-V showed significantly higher microshear bond strength when the enamel was kept wet. Single Bond 2 adhesive showed significantly higher microshear bond strength as compared with Xeno-V adhesive but no

  4. Chemical etching to dissolve dislocation cores in multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gregori, N.J. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Murphy, J.D., E-mail: john.murphy@materials.ox.ac.uk [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Sykes, J.M.; Wilshaw, P.R. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)

    2012-08-01

    Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to {approx}10{sup 6} cm{sup -2}. Dislocations and associated impurities act as strong recombination centres for electron-hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K{sub 2}Cr{sub 2}O{sub 7} (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to {approx}7:1 are achieved for {approx}15 {mu}m deep tubes. The aspect ratio decreases with tube depth and for {approx}40 {mu}m deep tubes is just {approx}2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I{sub 2} (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 {mu}m/h) and the pits produced had a low aspect ratio (<2:1).

  5. Range and etching behaviour of swift heavy ions in polymers

    Science.gov (United States)

    Singh, Lakhwant; Singh, Mohan; Samra, Kawaljeet Singh; Singh, Ravinder

    Aliphatic (CR-39) and aromatic (Lexan polycarbonate) polymers have been irradiated with a variety of heavy ions such as 58Ni, 93Nb, 132Xe, 139La, 197Au, 208Pb, 209Bi, and 238U having energy ranges of 5.60-8.00 MeV/n in order to study the range and etching kinetics of heavy ion tracksE The ion fluence (range ˜104-105 ions/cm2) was kept low to avoid the overlapping of etched tracks. The measured values of maximum etched track length were corrected due to bulk etching and over etching to obtain the actual range. The experimental results of range profiles were compared with those obtained by the most used procedures employed in obtaining range and stopping power. The range values of present ions have been computed using the semiempirical codes (SRIM-98, SRIM-2003.26, and LISE++:0-[Hub90]) in order to check their accuracy. The merits and demerits of the adopted formulations have been highlighted in the present work. It is observed that the range of heavy ions is greater in aromatic polymers (Lexan polycarbonate) as compared to the aliphatic polymers (CR-39) irradiated with similar ions having same incident energies. The SRIM-98 and SRIM2003.26 codes don't show any significant trend in deviations, however, LISE++:0-[Hub90] code provides overall good agreement with the experimental values. The ratio of track etch rate (along projectile trajectory) to the bulk etch rate has also been studied as a function of energy loss of heavy ions in these polymers.

  6. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage

    Science.gov (United States)

    Ding, Ruhang

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but with challenges addressed herein, including (1) control of etch profiles and (2) damage to etched feature sidewalls that affects device performance. (1) Fluorocarbon-based plasma etching often results in device profiles with undercuts due to preferential etching of SiGe over silicon. A C4F8/N2/Ar etch plasma gas mixture introduced here has been successfully used to achieve straight sidewalls through heterostructure layers by formation of a fluorocarbon inhibitor film on feature sidewalls to prevent undercutting. (2) Chemical and structural changes in the semiconductor at feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device, known as the 2-dimensional electron gas (2DEG). In experiments designed to better understand the mechanisms of plasma-induced sidewall damage, damage to straight wires was characterized both by the width of a non-conductive "sidewall depletion" region at the device sidewall, and by the noise level factor, gamma H/N, determined from spectra of low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of defects with increased plasma exposure time. Excess negative charge incorporated into the fluorocarbon inhibitor film could be another contributing factor. Other factors considered, including defects at the bottom of etched features as well as leakage current bypassing the wire, are ruled out as their contribution is expected to diminish as the distance between the 2DEG and feature bottom increases. The noise level factor, gammaH /N, shows a maximum with increasing etch depth, possibly the result of two competing effects: increasing ion dose and decreasing leakage current. The noise level shows a minimum at an ion bombardment energy

  7. Dentin bond optimization using the dimethyl sulfoxide-wet bonding strategy: A 2-year in vitro study.

    Science.gov (United States)

    Stape, Thiago Henrique Scarabello; Tjäderhane, Leo; Tezvergil-Mutluay, Arzu; Yanikian, Cristiane Rumi Fujiwara; Szesz, Anna Luiza; Loguercio, Alessandro Dourado; Martins, Luís Roberto Marcondes

    2016-12-01

    This study evaluated a new approach, named dimethyl sulfoxide (DMSO)-wet bonding, to produce more desirable long-term prospects for the ultrafine interactions between synthetic polymeric biomaterials and the inherently hydrated dentin substrate. Sound third molars were randomly restored with/without DMSO pretreatment using a total-etch (Scocthbond Multipurpose: SBMP) and a self-etch (Clearfil SE Bond: CF) adhesive systems. Restored teeth (n=10)/group were sectioned into sticks and submitted to different analyses: micro-Raman determined the degree of conversion inside the hybrid layer (DC); resin-dentin microtensile bond strength and fracture pattern analysis at 24h, 1year and 2 years of aging; and nanoleakage evaluation at 24h and 2 years. DMSO-wet bonding produced significantly higher 24h bond strengths for SBMP that were sustained over the two-year period, with significantly less adhesive failures. Similarly, DMSO-treated CF samples presented significantly higher bond strength than untreated samples at two years. Both adhesives had significant less adhesive failures at 2 years with DMSO. DMSO had no effect on DC of SBMP, but significantly increased the DC of CF. DMSO-treated SBMP samples presented reduced silver uptake compared to untreated samples after aging. Biomodification of the dentin substrate by the proposed strategy using DMSO is a suitable approach to produce more durable hybrid layers with superior ability to withstand hydrolytic degradation over time. Although the active role of DMSO on dentin bond improvement may vary according to monomer composition, its use seems to be effective on both self-etch and etch-and-rinse bonding mechanisms. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  8. 7 CFR 29.2570 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.2570 Section 29.2570 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing...-Cured Tobacco (u.s. Types 22, 23, and Foreign Type 96) § 29.2570 Wet (W). Any sound tobacco...

  9. 7 CFR 29.3567 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.3567 Section 29.3567 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 95) § 29.3567 Wet (W). Any sound tobacco containing excessive moisture to the extent that it is...

  10. 7 CFR 29.2316 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.2316 Section 29.2316 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... INSPECTION Standards Official Standard Grades for Virginia Fire-Cured Tobacco (u.s. Type 21) § 29.2316 Wet...

  11. 7 CFR 29.3077 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.3077 Section 29.3077 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Wet (W). Any sound tobacco containing excessive moisture to the extent that it is in an unsafe...

  12. 7 CFR 29.1083 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.1083 Section 29.1083 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1083 Wet (W). Any sound tobacco containing excessive moisture to the extent that it is...

  13. Characteristics of wet work in nurses

    NARCIS (Netherlands)

    Jungbauer, FHW; Steenstra, FB; Groothoff, JW; Coenraads, PJ

    Background objectives: Nursing is known for its high prevalence of hand dermatitis, mainly caused by the intense exposure to wet work in nursing activities. We aimed to study the characteristics of wet work exposure in nursing. Method: Trained observers monitored the duration and frequency of

  14. Curvature controlled wetting in two dimensions

    DEFF Research Database (Denmark)

    Gil, Tamir; Mikheev, Lev V.

    1995-01-01

    . As the radius of the substrate r0→∞, the leading effect of the curvature is adding the Laplace pressure ΠL∝r0-1 to the pressure balance in the film. At temperatures and pressures under which the wetting is complete in planar geometry, Laplace pressure suppresses divergence of the mean thickness of the wetting...

  15. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  16. Light-emitting silicon nanowires obtained by metal-assisted chemical etching

    Science.gov (United States)

    Irrera, Alessia; Josè Lo Faro, Maria; D’Andrea, Cristiano; Alessio Leonardi, Antonio; Artoni, Pietro; Fazio, Barbara; Picca, Rosaria Anna; Cioffi, Nicola; Trusso, Sebastiano; Franzò, Giorgia; Musumeci, Paolo; Priolo, Francesco; Iacona, Fabio

    2017-04-01

    This review reports on a new process for the synthesis of Si nanowires (NWs), based on the wet etching of Si substrates assisted by a thin metal film. The approach exploits the thickness-dependent morphology of the metal layers to define uncovered nanometric Si regions, which behave as precursor sites for the formation of very dense (up to 1 × 1012 NW cm‑2) arrays of long (up to several μm) and ultrathin (diameter of 5–9 nm) NWs. Intense photoluminescence (PL) peaks, characterized by maxima in the 640–750 nm range and by an external quantum efficiency of 0.5%, are observed when the Si NWs are excited at room temperature. The spectra show a blueshift if the size of the NW is decreased, in agreement with the occurrence of quantum confinement effects. The same etching process can be used to obtain ultrathin Si/Ge NWs from a Si/Ge multi-quantum well. The Si/Ge NWs exhibit—in addition to the Si-related PL peak—a signal at about 1240 nm due to Ge nanostructures. The huge surface area of the Si NW arrays can be exploited for sensing and analytical applications. The dependence of the PL intensity on the chemical composition of the surface indeed suggests interesting perspectives for the detection of gaseous molecules. Moreover, Si NWs decorated with Ag nanoparticles can be effectively employed in the interference-free laser desorption-ionization mass spectrometry of low-molecular-weight analytes. A device based on conductive Si NWs, showing intense and stable electroluminescence at an excitation voltage as low as 2 V, is also presented. The unique features of the proposed synthesis (the process is cheap, fast, maskless and compatible with Si technology) and the unusual optical properties of the material open the route towards new and unexpected perspectives for semiconductor NWs in photonics.

  17. Environmental photostability of SF6-etched silicon nanocrystals

    Science.gov (United States)

    Liptak, R. W.; Yang, J.; Kramer, N. J.; Kortshagen, U.; Campbell, S. A.

    2012-10-01

    We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF6) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF6-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF6-etched SiNCs up to 160 °C. The observed thermal and UV stability of SF6-etched SiNCs combined with their PL quantum yields of up to ˜50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF6-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.

  18. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  19. Fabrication of polymer nanowires via maskless O2 plasma etching.

    Science.gov (United States)

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.

  20. Effect of benzotriazole on the anisotropic electrolytic etching of copper

    Energy Technology Data Exchange (ETDEWEB)

    Papapanayiotou, D.; Deligianni, H.; Alkire, R.C. [Univ. of Illinois, Urbana, IL (United States)

    1998-09-01

    Electrolytic etching of copper foil at the base of cavities formed by patterned photoresist was investigated in 0.5 M sulfuric acid solutions which either contained 40 mM benzotriazole (BTA) or were free of BTA. It was found that undercutting (metal dissolution beneath the photoresist) was minimized by the action of surface films in both solutions. It was also found that the nature of the surface films and the mechanism by which they enhanced etch anisotropy differed. In additive-free solutions, anisotropic etching was observed under conditions of applied potential and flow for which mass transfer was suppressed in the interior corner regions of cavities. Such operating conditions in additive-free solutions displayed characteristic current transients. In BTA-containing solutions, the etch profiles were highly dependent on applied potential. In contrast to the additive-free solutions, the flow conditions in BTA-containing solutions had little effect on the current transients or on the degree of undercutting within the region of applied potential in which anisotropic etching was achievable.