WorldWideScience

Sample records for crystalline thin films

  1. Crystalline, Highly Oriented MOF Thin Film: the Fabrication and Application.

    Science.gov (United States)

    Fu, Zhihua; Xu, Gang

    2017-05-01

    The thin film of metal-organic frameworks (MOFs) is a rapidly developing research area which has tremendous potential applications in many fields. One of the major challenges in this area is to fabricate MOF thin film with good crystallinity, high orientation and well-controlled thickness. In order to address this challenge, different appealing approaches have been studied intensively. Among various oriented MOF films, many efforts have also been devoted to developing novel properties and broad applications, such as in gas separator, thermoelectric, storage medium and photovoltaics. As a result, there has been a large demand for fundamental studies that can provide guidance and experimental data for further applications. In this account, we intend to present an overview of current synthetic methods for fabricating oriented crystalline MOF thin film and bring some updated applications. We give our perspective on the background, preparation and applications that led to the developments in this area and discuss the opportunities and challenges of using crystalline, highly oriented MOF thin film. © 2017 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  3. Single crystalline thin films as a novel class of electrocatalysts

    Directory of Open Access Journals (Sweden)

    Snyder Joshua

    2013-01-01

    Full Text Available The ubiquitous use of single crystal metal electrodes has garnered invaluable insight into the relationship between surface atomic structure and functional electrochemical properties. However, the sensitivity of their electrochemical response to surface orientation and the amount of precious metal required can limit their use. We present here a generally applicable procedure for producing thin metal films with a large proportion of atomically flat (111 terraces without the use of an epitaxial template. Thermal annealing in a controlled atmosphere induces long-range ordering of magnetron sputtered thin metal films deposited on an amorphous substrate. The ordering transition in these thin metal films yields characteristic (111 electrochemical signatures with minimal amount of material and provides an adequate replacement for oriented bulk single crystals. This procedure can be generalized towards a novel class of practical multimetallic thin film based electrocatalysts with tunable near-surface compositional profile and morphology. Annealing of atomically corrugated sputtered thin film Pt-alloy catalysts yields an atomically smooth structure with highly crystalline, (111-like ordered and Pt segregated surface that displays superior functional properties, bridging the gap between extended/bulk surfaces and nanoscale systems.

  4. Microwave annealing for preparation of crystalline hydroxyapatite thin films

    CSIR Research Space (South Africa)

    Adams

    2006-11-01

    Full Text Available Microwave annealing for preparation of crystalline hydroxyapatite thin films Daniel Adams Æ Gerald F. Malgas Æ R. D. Smith Æ S. P. Massia Æ T. L. Alford Æ J. W. Mayer Received: 18 October 2004 / Accepted: 22 December 2005 / Published online: 8 October... stream_source_info Adams_2006.pdf.txt stream_content_type text/plain stream_size 34761 Content-Encoding UTF-8 stream_name Adams_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Abstract A sol was spun on single...

  5. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  6. Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

    Science.gov (United States)

    Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

    The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

  7. Pulsed laser deposition of semiconducting crystalline double-doped barium titanate thin films on nickel substrates

    Science.gov (United States)

    Apostol, I.; Stefan, N.; Luculescu, C. R.; Birjega, R.; Socol, M.; Miroiu, M.; Mihailescu, I. N.

    2011-02-01

    We synthesized by pulsed laser deposition (Ba,Sr,Y)TiO3 and (Ba,Pb,Y)TiO3 thin films on mechanically polished nickel substrates. The synthesized thin films were analyzed for: crystalline structure by X-ray diffractometry, morphology and surface topography by atomic force microscopy, optical and scanning electron microscopy, and elemental composition by energy dispersive X-ray spectroscopy and electrical properties by electrical measurements. We have shown that film properties were determined by the dopants, target composition, and deposition parameters (oxygen pressure, substrate temperature and incident laser fluence). All films exhibited a semiconducting behavior, as proved by the decrease of electrical resistance with heating temperature.

  8. Multiple timescales in the photoswitching kinetics of crystalline thin films of azobenzene-trimers

    Science.gov (United States)

    Weber, C.; Pithan, L.; Zykov, A.; Bommel, S.; Carla, F.; Felici, R.; Knie, C.; Bléger, D.; Kowarik, S.

    2017-11-01

    Functional materials that exhibit photoinduced structural phase transitions are highly interesting for applications in optomechanics and mechanochemistry. It is, however, still not fully understood how photochemical reactions, which are often accompanied by molecular motion, proceed in confined and crystalline environments. Here we show that thin films of azobenzene trimers exhibit high structural order and determine the crystallographic unit cell. We demonstrate that thin film can be switched partially reversibly between a crystalline and an amorphous phase. The time constant of the photoinduced amorphisation as measured with real-time x-ray diffraction (≈ 220 s) lies between the two time constants (120 s and 2870 s) of the ensemble photoisomerisation processes that are measured via optical spectroscopy. Our observation of a photoinduced shrinking of the crystalline domains indicates a cascading process, in which photoisomerisation starts at the surface of the thin film and propagates deeper into the crystalline layer by introducing disorder and generating free volume. This finding is important for the rapidly evolving research field of photoresponsive thin films and smart crystalline materials in general.

  9. Analysis and modification of amorphous and partially-crystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    DiNardo, N.J.; Mercer, T.W. [Drexel Univ., Philadelphia, PA (United States). Dept. of Physics; Martinez-Miranda, L.J. [Univ. of Maryland, College Park, MD (United States). Dept. of Materials and Nuclear Engineering; Siegal, M.P.; Friedmann, T.A.; Sullivan, J.R. [Sandia National Labs., Albuquerque, NM (United States); Plank, R.V.; Vohs, J.M. [Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. of Chemical Engineering

    1997-12-01

    Thin films of light atomic weight elements in amorphous, partially-crystalline, or crystalline forms have applications in a broad range of technologies. For example, amorphous tetrahedral carbon (a-tC) and polymeric thin films impact electronic materials technology as electron- and light-emitting device elements, respectively. A lack of crystallinity introduces complexity in the experimental and theoretical characterization of these materials but is not necessarily a limiting factor in their performance. While the growth process is clearly a major factor governing the physical properties of a film, interactions with the substrate are also important, so surface and interface analysis provides an important complement to bulk measurements. This paper focuses on several approaches in the characterization and modification of thin films made possible by recent experimental advances. The structural and electronic properties of two model systems are considered as examples: a-tC thin films grown by pulsed laser deposition (PLD) and polyaniline thin films grown by vapor deposition. First, scanning probe microscopies and X-ray scattering are used to investigate the structural aspects of a-tC films as a function of PLD growth conditions. The possible connection of nanoscale surface modification and characterization with electron emission properties will be discussed. Second, the results of inelastic scattering spectroscopy and other surface techniques will be discussed to obtain information on both interfacial aspects of the growth of polyaniline thin films and microscopic and macroscopic aspects of electrical conductivity upon doping. Comparisons will be made with other studies that address properties of analogous crystalline systems as appropriate. A brief assessment of the broader problem of analyzing these systems will be given.

  10. Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

    Directory of Open Access Journals (Sweden)

    Chuan Du

    2012-06-01

    Full Text Available New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs is achieved with good reproducibility.

  11. Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

    Science.gov (United States)

    Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

    2017-10-01

    We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

  12. Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Serrao, Claudy R.; You, Long; Gadgil, Sushant; Hu, Chenming; Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Diamond, Anthony M.; Hsu, Shang-Lin; Clarkson, James [Department of Material Science and Engineering, University of California, Berkeley, California 94720 (United States); Carraro, Carlo; Maboudian, Roya [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720 (United States)

    2015-02-02

    Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

  13. Controlling the morphology of side chain liquid crystalline block copolymer thin films through variations in liquid crystalline content.

    Science.gov (United States)

    Verploegen, Eric; Zhang, Tejia; Jung, Yeon Sik; Ross, Caroline; Hammond, Paula T

    2008-10-01

    In this paper, we describe methods for manipulating the morphology of side-chain liquid crystalline block copolymers through variations in the liquid crystalline content. By systematically controlling the covalent attachment of side chain liquid crystals to a block copolymer (BCP) backbone, the morphology of both the liquid crystalline (LC) mesophase and the phase-segregated BCP microstructures can be precisely manipulated. Increases in LC functionalization lead to stronger preferences for the anchoring of the LC mesophase relative to the substrate and the intermaterial dividing surface. By manipulating the strength of these interactions, the arrangement and ordering of the ultrathin film block copolymer nanostructures can be controlled, yielding a range of morphologies that includes perpendicular and parallel cylinders, as well as both perpendicular and parallel lamellae. Additionally, we demonstrate the utilization of selective etching to create a nanoporous liquid crystalline polymer thin film. The unique control over the orientation and order of the self-assembled morphologies with respect to the substrate will allow for the custom design of thin films for specific nanopatterning applications without manipulation of the surface chemistry or the application of external fields.

  14. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  15. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying

    2013-06-02

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.

  16. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  17. Structural, optical and mechanical properties of amorphous and crystalline alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nayar, Priyanka [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Khanna, Atul, E-mail: akphysics@yahoo.com [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Kabiraj, D.; Abhilash, S.R. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Beake, Ben D.; Losset, Yannick [Micro Materials Limited, Unit 3, Wrexham Technology Park, Wrexham LL13 7YP (United Kingdom); Chen, Banghao [Chemistry and Biochemistry Department, Florida State University, Tallahassee 32306 (United States)

    2014-10-01

    Thin films of amorphous alumina of thickness 350 nm were deposited on fused silica substrates by electron beam evaporation. Amorphous films were annealed at several temperatures in the range: 400–1130 °C and changes in film crystallinity, short-range structure, optical and mechanical properties were studied. X-ray diffraction studies found that crystallization starts at 800 °C and produces γ and δ-alumina, the latter phase grows with heat treatment and the sample was mostly δ and θ-alumina after annealing at 1130 °C. The as-deposited amorphous alumina films have low hardness of 5 to 8 GPa, which increases to 11 to 12 GPa in crystalline sample. {sup 27}Al Magic Angle Spinning Nuclear Magnetic Resonance was used to study the short-range order of amorphous and crystalline alumina films and it was found that amorphous alumina film contains AlO{sub 5} and AlO{sub 4} structural units in the ratio of 1:2. The concentration of AlO{sub 5} was significantly suppressed in crystalline film, which contains 48% of Al{sup 3+} ions in AlO{sub 6}, 7% in AlO{sub 5} and 45% in AlO{sub 4} units. - Highlights: • Structure–property correlations in alumina films grown by electron-beam evaporation • Amorphous films crystallize into γ and δ-alumina on annealing in air at 800 °C. • δ and θ-alumina films are stable up to 1130 °C and do not transform to α-phase. • Amorphous alumina films contain {sup [5]}Al and {sup [4]}Al structural units in the ratio of 1:2. • {sup [5]}Al decreases whereas {sup [6]}Al concentration increases on crystallization.

  18. Pulsed laser deposition of semiconducting crystalline double-doped barium titanate thin films on nickel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, I. [S.C. IPEE ATI S.A. Curtea de Arges, RO-115300 (Romania); Stefan, N.; Luculescu, C.R.; Birjega, R. [Laser Department, National Institute for Laser, Plasma and Radiation Physics, Bucharest - Magurele, P.O. Box MG-54, RO-077125 (Romania); Socol, M. [National Institute of Materials Physics, Bucharest - Magurele, RO-77125 (Romania); Miroiu, M. [Laser Department, National Institute for Laser, Plasma and Radiation Physics, Bucharest - Magurele, P.O. Box MG-54, RO-077125 (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [Laser Department, National Institute for Laser, Plasma and Radiation Physics, Bucharest - Magurele, P.O. Box MG-54, RO-077125 (Romania)

    2011-02-01

    We synthesized by pulsed laser deposition (Ba,Sr,Y)TiO{sub 3} and (Ba,Pb,Y)TiO{sub 3} thin films on mechanically polished nickel substrates. The synthesized thin films were analyzed for: crystalline structure by X-ray diffractometry, morphology and surface topography by atomic force microscopy, optical and scanning electron microscopy, and elemental composition by energy dispersive X-ray spectroscopy and electrical properties by electrical measurements. We have shown that film properties were determined by the dopants, target composition, and deposition parameters (oxygen pressure, substrate temperature and incident laser fluence). All films exhibited a semiconducting behavior, as proved by the decrease of electrical resistance with heating temperature.

  19. Role of indium in highly crystalline ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2013-02-05

    Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73 Multiplication-Sign 10{sup -3} ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63 Multiplication-Sign 10{sup -3} ohm.cm and mobility of 126.4 cm{sup 2}/V.s are achieved.

  20. Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

    2017-11-01

    Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

  1. In-Plane Crystallinity Effect on the Unipolar Resistance Switching Behavior of NiO Thin Film.

    Science.gov (United States)

    Kim, Il Tae; Hur, Jaehyun; Chae, Seung Chul

    2016-02-01

    We report on the resistance switching behavior of high quality NiO thin films grown on Pt(111)/SiOx/Si and Pt(111)/Al2O3 crystals. Polarity independent resistance switching, i.e., unipolar resistance switching exhibited a substrate crystallinity dependence during the resistance switching. The unipolar resistance switching was observed commonly in NiO film grown on both substrates. High resistance state of NiO thin film without in-plane crystallinity showed higher resistance than that of NiO films with in-plane crystallinity. The NiO thin film without in-plane crystallinity also required high set voltages for the resistance switching from high resistance state to low resistance state and showed nonlinear I-V characteristics at high voltage region before the resistance switching.

  2. Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

    Science.gov (United States)

    Bosse, J. L.; Grishin, I.; Huey, B. D.; Kolosov, O. V.

    2014-09-01

    In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT) chalcogenides, which display nucleation and growth dominated crystallization kinetics, respectively, this work explores the nanomechanical morphology of amorphous and crystalline phases in 50 nm thin films. Subjecting these PCM specimens to a lateral thermal gradient spanning the crystallization temperature allows for a detailed morphological investigation. Surface and depth-dependent analyses of the resulting amorphous, transition and crystalline regions are achieved with shallow angle cross-sections, uniquely implemented with beam exit Ar ion polishing. To resolve the distinct phases, ultrasonic force microscopy (UFM) with simultaneous topography is implemented revealing a relative stiffness contrast between the amorphous and crystalline phases of 14% for the free film surface and 20% for the cross-sectioned surface. Nucleation is observed to occur preferentially at the PCM-substrate and free film interface for both GST and GT, while fine subsurface structures are found to be sputtering direction dependent. Combining surface and cross-section nanomechanical mapping in this manner allows 3D analysis of microstructure and defects with nanoscale lateral and depth resolution, applicable to a wide range of materials characterization studies where the detection of subtle variations in elastic modulus or stiffness are required.

  3. van der Waals epitaxial ZnTe thin film on single-crystalline graphene

    Science.gov (United States)

    Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

    2018-01-01

    Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

  4. Compatibility and optoelectronic of ZnSe nano crystalline thin film

    Science.gov (United States)

    Taj, Muhammad Khan; Tayyaba, BiBi

    2012-09-01

    We report the room temperature synthesis of zinc selenide (ZnSe) nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process (CSSP). The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy (FT-IR). The XRD confirmed that the films were polycrystalline with the preferential orientation along the (111) plane corresponding to the cubic phase (2θ = 27.28°). The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm-1 and 490 cm-1 attributed to the cubic structured ZnSe. The Zn—Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.

  5. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  6. Diethynylbenzene-based liquid crystalline semiconductor for solution-processable organic thin-film transistors.

    Science.gov (United States)

    Madathil, Pramod Kandoth; Heinrich, Benoît; Donnio, Bertrand; Mathevet, Fabrice; Fave, Jean-Louis; Guillon, Daniel; Attias, Andre-Jean; Lee, Changjin; Kim, Tae-Dong; Lee, Kwang-Sup

    2010-10-01

    We report here the synthesis and characterization of novel diethynylbenzene-based liquid crystalline semiconductor (P1) for organic thin-film transistors (OTFTs). Compound P1 was synthesized by the Sonogashira coupling reaction between 2-bromo-5-(4-hexylthiophen-2-yl)thieno[3,2-b]thiophene and 1,4-bis(dodecyloxy)-2,5-diethynylbenzene. Top contact OTFTs were fabricated by spin casting with 2 wt% solution of P1 in chloroform and their best performance, which exhibited a hole mobility of 4.5 x 10(-5) cm2/Vs, was showed after annealing of the films at liquid crystalline temperature. Time-of-flight (TOF) mobility measured at liquid crystalline phase was observed to be 1.5 x 10(-6) cm2/Vs for both positive and negative carriers. These results indicate that the liquid crystallinity helps to improve the molecular packing and enhance charge mobility for P1. These advantages can be applicable to design and construct solution-processable OTFT materials for electronic applications.

  7. High-quality crystalline rubrene thin film on electron-irradiated PS

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeok Moo; Kim, Yong Nam; Kim, Jae Joon; Cho, Sung Oh [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2011-05-15

    From much of recent works, it was found that charge carrier transport in organic thin film transistors (OTFTs) is strongly affected by the first several semiconductor monolayers next to the semiconductor insulator interface. Among the interfacial factors, insulator surface roughness, surface energy, surface polarity and dielectric constant of dielectrics are considered as important parameters to affect performance of the OTFT. Thus, recently, a lot of efforts to optimize the conditions of surface of dielectrics using various treatment techniques have been performed. Among these techniques, surface modification using polymeric materials is very simple and qualities of polymer surface are hardly affected by preparation conditions. However, surface chain segmental motions near the glass transition temperature disrupts the growth of large-grain morphologies leading low carrier mobility. Thus, there is limitation in temperature to fabricate the organic semiconductor active layer. Here we present a strategy to fabricate high-quality crystalline rubrene thin film using combination of abrupt heating technique and electron irradiation of common homopolymer dielectrics of polystyrene (PS). Electron irradiation induces crosslinking of hydrocarbon chains of PS that restricts chain segmental motion even at the high temperature of 170 .deg. C. Through this method, high quality crystalline rubrene film can be remarkably rapidly produced on PS/SiO{sub 2} bilayer dielectrics in just 1 min

  8. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    KAUST Repository

    Yang, Zhenqian

    2018-01-10

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

  9. Controlling domain orientation of liquid crystalline block copolymer in thin films through tuning mesogenic chemical structures

    Energy Technology Data Exchange (ETDEWEB)

    Xie, He-Lou [Institute for Molecular Engineering, The University of Chicago, Chicago Illinois 60637; Li, Xiao [Institute for Molecular Engineering, The University of Chicago, Chicago Illinois 60637; Ren, Jiaxing [Institute for Molecular Engineering, The University of Chicago, Chicago Illinois 60637; Bishop, Camille [Institute for Molecular Engineering, The University of Chicago, Chicago Illinois 60637; Arges, Christopher G. [Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge Louisiana 70803 USA; Nealey, Paul F. [Institute for Molecular Engineering, The University of Chicago, Chicago Illinois 60637; Materials Science Division, Argonne National Laboratory, Argonne Illinois 60439

    2017-01-24

    Controlling the macroscopic orientation of nanoscale periodic structures of amphiphilic liquid crystalline block copolymers (LC BCPs) is important to a variety of technical applications (e.g., lithium conducting polymer electrolytes). To study LC BCP domain orientation, a series of LC BCPs containing a poly(ethylene oxide) (PEO) block as a conventional hydrophilic coil block and LC blocks containing azobenzene mesogens is designed and synthesized. LC ordering in thin films of the BCP leads to the formation of highly ordered, microphase-separated nanostructures, with hexagonally arranged PEO cylinders. Substitution on the tail of the azobenzene mesogen is shown to control the orientation of the PEO cylinders. When the substitution on the mesogenic tails is an alkyl chain, the PEO cylinders have a perpendicular orientation to the substrate surface, provided the thin film is above a critical thickness value. In contrast, when the substitution on the mesogenic tails has an ether group the PEO cylinders assemble parallel to the substrate surface regardless of the film thickness value.

  10. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  11. Thermal resistances of crystalline and amorphous few-layer oxide thin films

    Science.gov (United States)

    Chen, Liang; Kumari, Niru; Hou, Yu

    2017-11-01

    Thermal insulation at nanoscale is of crucial importance for non-volatile memory devices such as phase change memory and memristors. We perform non-equilibrium molecular dynamics simulations to study the effects of interface materials and structures on thermal transport across the few-layer dielectric nanostructures. The thermal resistance across few-layer nanostructures and thermal boundary resistance at interfaces consisting of SiO2/HfO2, SiO2/ZrO2 or SiO2/Al2O3 are obtained for both the crystalline and amorphous structures. Based on the comparison temperature profiles and phonon density of states, we show that the thermal boundary resistances are much larger in crystalline few-layer oxides than the amorphous ones due to the mismatch of phonon density of state between distinct oxide layers. Compared with the bulk SiO2, the increase of thermal resistance across crystalline few-layer oxides results from the thermal boundary resistance while the increase of thermal resistance across amorphous few-layer oxides is attributed to the lower thermal conductivity of the amorphous thin films.

  12. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

    Science.gov (United States)

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; Henry, M. D.; Brumbach, M. T.; Ihlefeld, J. F.

    2017-02-01

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2 K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1).

  13. Correlation of Crystalline and Structural Properties of C60 Thin Films Grown at Various Temperature with Charge Carrier Mobility

    Energy Technology Data Exchange (ETDEWEB)

    Singh,T.; Sarciftci, N.; Yang, H.; Yang, L.; Plochberger, B.; Sitter, H.

    2007-01-01

    Transistors fabricated from C{sub 60} films grown by hot wall epitaxy at higher substrate temperature, showed an order of magnitude increased charge carrier mobility up to 6 cm{sup 2}/V s. In this letter, the authors present an extensive study of morphology and crystallinity of the fullerene films using atomic force microscopy and grazing-incidence x-ray diffraction. A clear correlation of crystalline quality of the C{sub 60} film and charge carrier mobility was found. A higher substrate temperature leads to a single crystal-like faceted fullerene crystals. The high crystalline quality solely brings a drastic improvement in the charge carrier mobility. A gate voltage independent mobility is also observed in these devices which can be attributed to the highly conjugated nature of the C{sub 60} thin film.

  14. Thin nanostructured crystalline TiO{sub 2} films and their applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Yajun

    2007-06-15

    Research on thin nanostructured crystalline TiO{sub 2} films has attracted considerable interests because of their intriguing physical properties and potential applications in photovoltaics. Nanostructured TiO{sub 2} film plays an important role in the TiO{sub 2} based dye-sensitized solar cells because they act as a substrate for the adsorption of dye molecules and a matrix for the transportation of electrons as well. Thus they can influence the solar cell performance significantly. Consequently, the control of the morphology including the shape, size and size distribution of the TiO{sub 2} nanostructures is critical to tune and optimize the performance of the solar cells. To control the TiO{sub 2} morphology, a strategy using amphiphilic block copolymer as templating agent coupled with sol-gel chemistry has been applied. Especially, a good-poor solvent pair induced phase separation process has been developed to guide the microphase separation behavior of the block copolymers. The amphiphilic block copolymers used include polystyrene-block-poly (ethylene oxide) (PS-b-PEO), poly (methyl methacrylate)-block-poly (ethylene oxide) (PMMA-b-PEO), and poly (ethylene oxide)-block-polystyrene-block-poly (ethylene oxide) (PEO-b-PS-b-PEO). The block copolymer undergoes a good-poor-solvent pair induced phase separation in a mixed solution of 1, 4-dioxane or N, N-dimethyl formamide (DMF), concentrated hydrochloric acid (HCl) and Titanium tetraisopropoxide (TTIP). Specifically, in the system of PS-b-PEO, a morphology phase diagram of the inorganic-copolymer composite films was mapped by adjusting the weight fractions among 1, 4-dioxane, HCl, and TTIP in solution. The amorphous TiO{sub 2} within the titania-block copolymer composite films was crystallized by calcination at temperatures above 400 C, where the organic block copolymer was simultaneously burned away. This strategy is further extended to other amphiphilic block copolymers of PMMA-b-PEO and PEO-b-PS-b-PEO, where the

  15. Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

    Science.gov (United States)

    Klett, Robin; Schönle, Joachim; Becker, Andreas; Dyck, Denis; Borisov, Kiril; Rott, Karsten; Ramermann, Daniela; Büker, Björn; Haskenhoff, Jan; Krieft, Jan; Hübner, Torsten; Reimer, Oliver; Shekhar, Chandra; Schmalhorst, Jan-Michael; Hütten, Andreas; Felser, Claudia; Wernsdorfer, Wolfgang; Reiss, Günter

    2018-02-14

    Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

  16. Optimization of PZT Thin Film Crystalline Orientation Through Optimization of TiO2/Pt Templates

    Science.gov (United States)

    2011-01-01

    of Crystal Orientation of Ti Thin Films by Sputtering. Electrochimica Acta 1999, 44, 3945. 10. Jung, M. J.; Nam, K. H.; Shaginyan, L. R.; Han, J. G...Morphology of Oxide Films During the Initial Stages of Titanium Oxidation. Acta Metallurgica 1966, 14, 491. 9. Hoshi, Y.; Suzuki, E.; Shimizu, H. Control

  17. Dependence of critical current density on crystalline direction in thin YBCO films

    DEFF Research Database (Denmark)

    Paturi, P.; Peurla, M.; Raittila, J.

    2005-01-01

    The dependence of critical current density (J(c)) on the angle between the current direction and the (100) direction in the ab-plane of thin YBCO films deposited on (001)-SrTiO3 from natiocrystalline and microcrystalline targets is studied using magneto-optical microscopy. In the films made from...

  18. Control of structure and growth of polymorphic crystalline thin films of amphiphilic molecules on liquid surfaces

    DEFF Research Database (Denmark)

    Weinbach, S.P.; Kjær, K.; Bouwman, W.G.

    1994-01-01

    The spontaneous formation and coexistence of crystalline polymorphic trilayer domains in amphiphilic films at air-liquid interfaces is demonstrated by grazing incidence synchrotron x-ray diffraction. These polymorphic crystallites may serve as models for the early stages of crystal nucleation...

  19. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  20. Effects of Postannealing on Orientation and Crystallinity of P-Type Transparent Conducting CuScO2 Thin Films

    Science.gov (United States)

    Kakehi, Yoshiharu; Satoh, Kazuo; Yotsuya, Tsutom; Masuko, Keiichiro; Ashida, Atsushi

    2007-05-01

    Highly c-axis-oriented CuScO2 thin films were successfully fabricated from polycrystalline CuScO2 thin films by pulsed laser deposition and followed by postannealing treatment. The oxygen pressure effects during postannealing on the surface morphology, and crystallographic and optical properties of the films were investigated. The growth orientation, crystallinity along both out-of-plane and in-plane directions, and surface morphology of the films were significantly improved by postannealing at an optimal oxygen pressure. Using a film postannealed under optimal annealing conditions, the optical and electrical properties of the film were measured. The optical average transmittance of the film was greater than 70% in the visible/near-infrared regions, and the energy gap for calculated direct allowed transition was 3.7 eV. The Hall coefficient measured using the van der Pauw electrode configuration was 1.9× 10+1 cm3 C-1, indicating p-type conduction. The resistivity, carrier concentration, and Hall mobility of the film at room temperature were 9.9× 10+1 Ω cm, 3.2× 10+17 cm-3, and 2.0× 10-1 cm2 V-1 s-1, respectively.

  1. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposi- tion (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and ...

  2. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) ...

  3. Crystalline structure, and magnetic and magneto-optical properties of MnSbBi thin films

    CERN Document Server

    Kang, K

    2001-01-01

    the c-axis texture and the saturation magnetisation due to less segregation of the non-magnetic phase in the annealed films. Using a thin Sb seed layer in Mn/Sb/Bi// films also results in an increase in both the c-axis texture and the saturation magnetisation. Decreasing the layer thicknesses in Mn/Bi/Sb// films results in a decrease in the grain size. By depositing the Sb layer first in Pt/Mn/Sb// and Co/Mn/Sb// films, the perpendicular c-axis texture can be kept before and after annealing. Computer simulation was carried out to investigate the relationship between the crystal structure and the magnetic properties before and after annealing. Comparing optical and MO properties of annealed Mn/Sb/Bi// and Mn/Sb// films suggests a possible origin of the peaks in Kerr spectra caused by adding Bi. This thesis reports work carried out to investigate some aspects of the crystal structure, and magnetic and magneto-optical (MO) properties in thin films of the Mn-Sb system. Reports of interesting properties and the po...

  4. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  5. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  6. Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Zhong Shi

    2016-01-01

    Full Text Available The anomalous Hall effect (AHE and magneto-crystalline anisotropy (MCA are investigated in epitaxial NixFe1−x thin films grown on MgO (001 substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K1. When nickel content x decreasing, both b and K1 vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate NixFe1−x has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings, resulting in the increased b and K1. This remarkable correlation between b and K1 can be attributed to the effect of band filling near the Fermi surface.

  7. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  8. Influence of SiO{sub 2} buffer layer on the crystalline quality and photoluminescence of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, L H; Chen, Y L; Xu, F [College of Math and Physics, Nanjing University of Information Science and Technology, Nanjing, 210044 (China); Li, X Y [Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, 210094 (China); Hua, S, E-mail: congyu3256@sina.com [Institute of Electronic Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing, 210094 (China)

    2011-02-01

    In this work, a SiO{sub 2} buffer layer was first grown on Si substrate by thermal oxidation, and then ZnO thin films were deposited on SiO{sub 2} buffer layer and Si substrate by electron beam evaporation and sol-gel method. The influence of SiO{sub 2} buffer layer on the crystalline quality and photoluminescence of the films was investigated. The analyses of X-ray diffraction (XRD) showed that all the ZnO thin films had a hexagonal wurtzite structure and were preferentially oriented along the c-axis perpendicular to the substrate surface. The SiO{sub 2} buffer layer improved the crystalline quality and decreased the stress in ZnO thin films. The surface morphology analyses of the samples indicated that ZnO thin films deposited on SiO{sub 2} buffer layers had densely packed grains which obviously increased compared with those grown on bare Si substrate. The photoluminescence spectra of the samples showed that the ZnO thin films deposited on SiO{sub 2} buffer layers had stronger ultraviolet emission performance. The results suggest that SiO{sub 2} buffer layer can improve the crystalline quality and ultraviolet emission of ZnO thin films.

  9. Ferromagnetism in spin-coated cobalt-doped TiO2 thin films and the role of crystalline phases

    Science.gov (United States)

    Salazar Cuaila, J. L.; Alayo, W.; Avellaneda, César O.

    2017-11-01

    Two sets of Cobalt-doped (1-10% at) TiO2 thin films, for different molar concentrations of the Ti precursor (0.3 and 0.5 mol/L), have been deposited onto Si substrates by combining the Sol Gel process and the Spin Coating technique. The structure of the samples was studied by X-ray reflectivity (XRR) and X-ray diffraction (XRD) and their magnetic properties were analyzed by magnetization measurements as a function of the applied magnetic field. The XRR results provided the thickness and interfacial roughness of the films, while XRD patterns revealed the crystalline phases and lattice parameters. Room temperature ferromagnetic behaviour was observed for some of the atomic Co concentrations by the magnetization measurements. This behaviour has been correlated to the crystalline phases, which were found to be modified by both the molar ratio of Ti precursor and the concentration of the Co dopant. A suppression of ferromagnetism is observed for some atomic Co fractions and it was attributed to the presence of secondary crystalline phases.

  10. Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.

    Science.gov (United States)

    Mantovan, R; Fallica, R; Mokhles Gerami, A; Mølholt, T E; Wiemer, C; Longo, M; Gunnlaugsson, H P; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuth-Ram, K; Fanciulli, M; Gislason, H P; Langouche, G; Ólafsson, S; Weyer, G

    2017-08-15

    The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, following dilute implantation of 57Mn (T½ = 1.5 min) at ISOLDE/CERN, to study the electronic charge distribution in the immediate vicinity of the 57Fe probe substituting Ge (FeGe), and to interrogate the local environment of FeGe over the amorphous-crystalline phase transition in GeTe thin films. Our results show that the local structure of as-sputtered amorphous GeTe is a combination of tetrahedral and defect-octahedral sites. The main effect of the crystallization is the conversion from tetrahedral to defect-free octahedral sites. We discover that only the tetrahedral fraction in amorphous GeTe participates to the change of the FeGe-Te chemical bonds, with a net electronic charge density transfer of  ~ 1.6 e/a0 between FeGe and neighboring Te atoms. This charge transfer accounts for a lowering of the covalent character during crystallization. The results are corroborated by theoretical calculations within the framework of density functional theory. The observed atomic-scale chemical-structural changes are directly connected to the macroscopic phase transition and resistivity switch of GeTe thin films.

  11. Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE Film with an Improved Crystalline Structure for Sensors and Actuators

    Directory of Open Access Journals (Sweden)

    Rahman Ismael Mahdi

    2014-10-01

    Full Text Available Ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE thin films are measured as a function of different annealing temperatures (80 to 140 °C. It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  12. Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Jagannath Panigrahi

    2017-03-01

    Full Text Available The evidence of good quality silicon surface passivation using thermal ALD deposited Al doped zinc oxide (AZO thin films is demonstrated. AZO films are prepared by introducing aluminium precursor in between zinc and oxygen precursors during the deposition. The formation of AZO is confirmed by ellipsometry, XRD and Hall measurements. Effective minority carrier lifetime (τeff greater than 1.5ms at intermediate bulk injection levels is realized for symmetrically passivated p-type silicon surfaces under optimised annealing conditions of temperature and time in hydrogen ambient. The best results are realised at 450°C annealing for >15min. Such a layer may lead to implied open circuit voltage gain of 80mV.

  13. Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2015-05-01

    Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  14. An amorphous-to-crystalline phase transition within thin silicon films grown by ultra-high-vacuum evaporation and its impact on the optical response

    Science.gov (United States)

    Orapunt, Farida; Tay, Li-Lin; Lockwood, David J.; Baribeau, Jean-Marc; Noël, Mario; Zwinkels, Joanne C.; O'Leary, Stephen K.

    2016-02-01

    A number of thin silicon films are deposited on crystalline silicon, native oxidized crystalline silicon, and optical quality fused quartz substrates through the use of ultra-high-vacuum evaporation at growth temperatures ranging from 98 to 572 °C. An analysis of their grazing incidence X-ray diffraction and Raman spectra indicates that a phase transition, from amorphous-to-crystalline, occurs as the growth temperature is increased. Through a peak decomposition process, applied to the Raman spectroscopy results, the crystalline volume fractions associated with these samples are plotted as a function of the growth temperature for the different substrates considered. It is noted that the samples grown on the crystalline silicon substrates have the lowest crystallanity onset temperature, whereas those grown on the optical quality fused quartz substrates have the highest crystallanity onset temperature; the samples grown on the native oxidized crystalline silicon substrates have a crystallanity onset temperature between these two limits. These resultant dependencies on the growth temperature provide a quantitative means of characterizing the amorphous-to-crystalline phase transition within these thin silicon films. It is noted that the thin silicon film grown on an optical quality fused quartz substrate at 572 °C, possessing an 83% crystalline volume fraction, exhibits an optical absorption spectrum which is quite distinct from that associated with the other thin silicon films. We suggest that this is due to the onset of sufficient long-range order in the film for wave-vector conservation to apply, at least partially. Finally, we use a semi-classical optical absorption analysis to study how this phase transition, from amorphous-to-crystalline, impacts the spectral dependence of the optical absorption coefficient.

  15. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    Science.gov (United States)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  16. Microwave Plasma Source for Fabrication of Micro- and Nano-Crystalline Diamond Thin Films for Electronic Devices

    Science.gov (United States)

    Paosawatyanyong, Boonchoat; Rujisamphan, Nopporn; Bhanthumnavin, Worawan

    2013-01-01

    The design and utilization of an affordable compact-size high-density plasma reactor for micro- and nano-crystalline diamond (MCD/NCD) thin film deposition is presented. The system is based on a 2.45 GHz domestic microwave oven magnetron. A switching power supply module, which yields a low-voltage high-current AC filament feeding and a high-voltage low-current DC cathode bias, is constructed to serve as the magnetron power source. With a high stability of the power module combined with the usage of water cooling gaskets, over 100 h of plasma processing time was achieved without overheating or causing any damage to the magnetron. Depositions of well-faceted MCD/NCD thin films, with distinct diamond Raman characteristics, were obtained using H2-CH4 discharge with 1-5% CH4. Metal-semiconductor diode structures were fabricated using gold and aluminum as ohmic and rectifying contacts, respectively, and their responses to DC signals revealed a high rectification ratio of up to 106 in the intrinsic MCD/NCD devices.

  17. Thin film PV standing tall side-by-side with multi-crystalline silicon: also in terms of reliability

    Science.gov (United States)

    Dhere, Neelkanth G.; Ward, Allan; Wieting, Robert; Guha, Subhendu; Dhere, Ramesh G.

    2015-09-01

    Triple junction hydrogenated amorphous silicon (a-Si:H) have shown exceptionally good reliability and durability. Cadmium telluride, CdTe PV modules have shown the lowest production cost without subsidies. Copper-indium gallium selenide sulfide (CIGS) and cadmium telluride (CdTe) cells and modules have been showing efficiencies equal or greater than those of multi-crystalline, (mx-Si), PV modules. Early generation CIGS and CdTe PV modules had a different qualification standard 61646 as compared to 61215 for crystalline silicon, (c-Si), PV modules. This, together with small vulnerability in harsh climates, was used to create doubts about their reliability. Recently CdTe and CIGS glass-to-glass modules have passed the rigorous accelerated tests, especially as long as the edge seals are not compromised. Moreover, the cumulative shipment of these modules is more than 12 GW demonstrating the customer confidence in these products. Hence it can be stated that also in terms of the reliability and durability all the thin film PV modules stand tall and compare favorably with mx-Si.

  18. Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

    Science.gov (United States)

    Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

    2017-04-19

    Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO2 and V2O5, and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

  19. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

    Science.gov (United States)

    Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

    1993-07-01

    Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

  20. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  1. Crystalline domains in epitaxial Y(Ni0.5Mn0.5)O3 thin films grown by PLD on different STO substrates

    Science.gov (United States)

    Coy, L. E.; Rebled, J.; Ventura, J.; Yate, L.; Ferrater, C.; Langenberg, E.; Polo, M. C.; Xuriguera, E.; Peiro, F.; Varela, M.

    2015-01-01

    Thin films of ferromagnetic Y(Ni0.5Mn0.5)O3 (YNMO) perovskite were grown on different SrTiO3 (STO) substrate orientations [i.e. (0 0 1), (1 1 0) and (1 1 1)] by means of pulsed laser deposition (PLD) and their morphological and functional properties were studied and characterized. Optimal deposition parameters were identified and their individual influence on the quality of the films was also addressed. Films showed a single out-of-plane orientation in all the substrate scenarios, while the in-plane texture in STO(0 0 1) and STO(1 1 1) show two and three in plane domains, respectively. Growth mechanism and morphology were studied by HRTEM and AFM. As a result, a clear 3D growth mechanism was identified and a direct correlation between the two in-plane crystalline domains on the surface morphology of the sample was observed. Magnetic response of the films was investigated as a function of their crystalline properties. The films were found to have a paramagnetic to ferromagnetic transition around 90 K consistent with their bulk counterparts. Finally, the discrepancies on the epitaxial growth between YMnO3 (YMO) and YMNO thin films were clarified and tabulated, giving a clear picture of the effect of Ni substitution in the epitaxial and crystalline properties of manganites of this family.

  2. Innovative processes adapted to PERC thin-film crystalline silicon solar cells

    OpenAIRE

    Gérenton, Félix

    2016-01-01

    The cost of fabrication of photovoltaic modules is a critical figure for settling solar power into the energy mix. One way to lower this cost is to decrease silicon use in photovoltaic cells. It is technically possible to produce crystalline silicon solar cells only a few dozens of microns thick, although this represents a challenge both for their fabrication process and their optimization. This last one is different from cells of standard thickness, especially by the need of high level light...

  3. Electro-Optically Active Monomers: Synthesis and Characterization of Thin Films of Liquid Crystalline Substituted Polyacetylenes

    Science.gov (United States)

    Duran, R. S.

    1995-01-01

    The overall objective of this study was the description of the behavior of mesogen substituted acetylene monomers and polymers in monolayer films at the air/water interface and as multilayer films including the formation of such films. Fundamental knowledge to be gained would include the effect of balancing hydrophilic and hydrophobic tendencies in a molecule more complex than the classical fatty acids or lipids. The effect of molecular shape on the packing and thus the ultimate stability of monolayers formed from these new molecules was explored. The work takes on the challenge of preorienting monomers in well-ordered arrays prior to attempting polymerization with the hope that order would be preserved in any resulting polymer. New knowledge gained with regard to the acetylenic monomers includes processing of the acetylene monomer into multi-layer films, followed by the design and synthesis of a second generation of improved monomer structure for superior LBK film transfer properties. A third generation of acetylenic monomer was synthesized which approaches more closely the goal of solid state polymerization of these materials. A parallel study took a different approach. The materials are pre-formed poly(phenylene-acetylene) polymers so questions about reactivity are mute. The materials are a variation on the well-known hairy-rod polymers with regard to their Langmuir film-forming properties. Overall, the goal was to demonstrate that these polymers could be processed into NLO materials with novel polar order.

  4. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  5. Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

    Energy Technology Data Exchange (ETDEWEB)

    Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

  6. Formation of nano-crystalline C{sub 3}N{sub 4} thin films on stainless steel from hexamethylenetetramine and urea using simple sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Uddin, Md. Nizam, E-mail: nizam3472@yahoo.com [Department of Chemistry, Shahjalal University of Science and Technology, Sylhet-3114 (Bangladesh); Yang, Yong Suk, E-mail: ysyang@pusan.ac.kr [College of Nanoscience and Nanotechnology, RCDAMP, Pusan National University, Pusan 609-735 (Korea, Republic of)

    2013-12-02

    Nano-crystalline C{sub 3}N{sub 4} thin films have been deposited on stainless steel (SS) substrates from hexamethylenetetramine (HMTA) and urea separately using simple sol–gel method. For that purpose hot-dip coating processes were carried out. The coated specimens were annealed at 800 °C in N{sub 2}. The samples were analyzed using field emission scanning electron microscopy, nanoindenter, X-ray photoelectron spectroscopy and X-ray diffraction. The deposits show C{sub 3}N{sub 4} with clear hexagonal morphology and size range of 50–500 nm. The hardness values of the synthesized films show 2.74–4.35 times higher than that of SS. The hardness and Young's modulus of the films synthesized from HMTA show the highest values; 16.10 and 394.29 GPa, respectively. This significant achievement of the production of nano-crystalline C{sub 3}N{sub 4} from inexpensive sources and simple methods at ambient pressure opens up a door for its low cost production on SS for a wide range of applications. Irrespective of the sources with different chemical structures we got similar product, which implies that different sources of carbon and nitrogen might be used with our methods of sol–gel deposition. - Highlights: • Formation of nano-crystalline C{sub 3}N{sub 4} thin films with a low cost and simple sol–gel method • Uses of inexpensive materials, like steel, hexamethylenetetramine and urea • Repeatability of this method using different precursors for crystalline C{sub 3}N{sub 4} thin films.

  7. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2017-11-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  8. The effects of annealing temperature on the structural properties and optical constants of a novel DPEA-MR-Zn organic crystalline semiconductor nanostructure thin films

    Science.gov (United States)

    Al-Hossainy, A. Farouk; Ibrahim, A.

    2017-11-01

    The dependence of structural properties and optical constants on annealing temperature of a 2-((1,2-bis (diphenylphosphino)ethyl)amino) acetic acid-methyl red-monochloro zinc dihydride (DPEA-MR-Zn) as a novel organic semiconductor thin film was studied. The DPEA-MR-Zn thin film was deposited on silicon substrates using the spin coating technique. The as-deposited film was annealed in air for 1 h at 150, 175 and 205 °C. The XRD study of DPEA-MR-Zn in its powder form showed that this complex is mere a triclinic crystal structure with a space group P-1. In addition, the XRD patterns showed that the as-deposited thin films were crystallized according to the preferential orientation [(214), (121), (0 2 bar 6), (3 bar 02), (122) and (11 4 bar)]. Moreover, two additional peaks (2 bar 2 bar 1 and 2 4 bar 7) were shown at 2θ nearly 30°, and 69°, where, the more annealing temperature, the more the intensity of the two peaks. In addition, it was noticed that the grain size had a remarkable change with an annealing temperature of the DPEA-MR-Zn thin films. The optical measurements showed that the thin film has a relatively high absorption region where the photon energy ranges from 2 to 3.25 eV. Both of Wemple-DiDomenico and single Sellmeier oscillator models were applied on the DPEA-MR-Zn to analyze the dispersion of the refractive index and the optical and dielectric constants. The outcome of the study of the structural and optical properties reported here of the DPEA-MR-Zn organic semiconductor crystalline nanostructure thin film had shown various applications in many advanced technologies such as photovoltaic solar cells.

  9. Liquid-crystalline rigid-core semiconductor oligothiophenes: influence of molecular structure on phase behaviour and thin-film properties.

    Science.gov (United States)

    Melucci, Manuela; Favaretto, Laura; Bettini, Christian; Gazzano, Massimo; Camaioni, Nadia; Maccagnani, Piera; Ostoja, Paolo; Monari, Magda; Barbarella, Giovanna

    2007-01-01

    The design, synthesis and properties of liquid-crystalline semiconducting oligothiophenes containing dithienothiophene (DTT), benzothiadiazole (BTZ) and carbazole (CBZ) rigid cores are described. The effect of molecular structure (shape, size and substitution) on their thermal behaviour and electrical properties has been investigated. Polarised optical microscopy (POM) and differential scanning calorimetry (DSC) analyses have revealed highly ordered smectic mesophases for most of the newly synthesised compounds. X-ray diffraction (XRD) studies performed at various temperatures have shown that the smectic order is retained in the crystalline state upon cooling across the transition temperature, affording cast films with a more favourable morphology for FET applications.

  10. Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)

    2016-08-01

    Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.

  11. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  12. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  13. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  14. Experimental investigation of off-stoichiometry and 3d transition metal (Mn, Ni, Cu-substitution in single-crystalline FePt thin films

    Directory of Open Access Journals (Sweden)

    Takuya Ono

    2016-05-01

    Full Text Available In L10 (fct-FePt thin films, both tuning Fe and Pt concentrations and substitution with third-metal were studied for magnetic characteristic optimization. We investigated single-crystalline FePt-X (X = Mn, Ni, Cu thin films grown epitaxially on MgO(001 substrates at a substrate temperature of 350  °C by changing Fe, Pt, and X contents, and explored the effects of off-stoichiometry and 3d-metal-substitution. The magnetic moment per atom (m of FePt-X films as a function of the effective number of valence electrons (neff in 3d metal sites follows the Slater-Pauling-type trend, by which m decreases by the neff deviation from neff = 8, independently of the X metal and the Pt concentration. The magnetic anisotropy (Ku exhibits neff dependence similar to m. This trend was almost independent of the Pt concentration after compensation using the theoretical prediction on the relation between Ku and Fe/Pt concentrations. Such a trend has been proved for stoichiometric FePt-X films, but it was clarified as robust against off-stoichiometry. The compensated Ku ( K u comp of FePt-Mn and FePt-Cu followed a similar trend to that predicted by the rigid-band model, although the K u comp of the FePt-Mn thin films dropped more rapidly than the rigid band calculation. However, it followed the recent first-principles calculation.

  15. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  16. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  17. Effects of crystallinity and impurities on the electrical conductivity of Li–La–Zr–O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong Sun, E-mail: parkj@anl.gov [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Cheng, Lei [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Material Sciences and Engineering, University of California, Berkeley, CA 94720 (United States); Zorba, Vassilia [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Mehta, Apurva [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Cabana, Jordi [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Chemistry, University of Illinois at Chicago, IL 60607 (United States); Chen, Guoying; Doeff, Marca M.; Richardson, Thomas J. [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Park, Jung Hoon [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of); Son, Ji-Won [High-Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Hong, Wan-Shick, E-mail: wshong@uos.ac.kr [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of)

    2015-02-02

    We present a study of the fabrication of thin films from a Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZO) target using pulsed laser deposition. The effects of substrate temperatures and impurities on electrochemical properties of the films were investigated. The thin films of Li–La–Zr–O were deposited at room temperature and higher temperatures on a variety of substrates. Deposition above 600 °C resulted in a mixture of cubic and tetragonal phases of LLZO, as well as a La{sub 2}Zr{sub 2}O{sub 7} impurity, and resulted in aluminum enrichment at the surface when Al-containing substrates were used. Films deposited at 600 °C exhibited the highest room temperature conductivity, 1.61 × 10{sup −6} S/cm. The chemical stability toward metallic lithium was also studied using X-ray photoelectron spectroscopy, which showed that the oxidation state of zirconium remained at + 4 following physical contact with heated lithium metal. - Highlights: • Thin film Li–La–Zr–O was deposited by pulsed laser deposition using Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Deposition above 600 °C resulted in cubic and tetragonal phases of Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Aluminum migration from the substrate to the film surface was observed. • The chemical stability toward lithium was studied by X-ray photoelectron spectroscopy.

  18. Anomalous behavior of B1g mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO thin films

    Directory of Open Access Journals (Sweden)

    Subodh K. Gautam

    2015-12-01

    Full Text Available The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO2 lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb+5 in the TiO2 lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR spectra of films with small size crystallites shows stiffening of about 4 cm−1 for the Eg(1 mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B1g mode exhibits a large anomalous softening of 20 cm−1 with asymmetrical broadening; which was not reported for the case of pure TiO2 crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb5+ doping induced reduction of Ti4+ ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

  19. Thin Film

    African Journals Online (AJOL)

    a

    TiO2 film and also the photo generated electrons are the charge carriers. As anodic potential increased, a large amount of current carrier (photoelectrons) passed through the TiO2 film. Additionally, photogenerated holes were consumed by methyl orange in the solution, which is reflected in the decrease of absorbance. 0.

  20. Crystalline MoOx Thin-Films as Hole Transport Layers in DBP/C70 Based Organic Solar Cell

    DEFF Research Database (Denmark)

    Ahmadpour, Mehrad; Fernandes Cauduro, André Luis; dos Reis, Roberto

    Transition Metal Oxides such as Molybdenum oxide (MoOx) have been intensively used as hole transport layers in different organic, inorganic and hybrid technologies, demonstrating also important improvements on the power conversion efficiency as well as on the stability of different types of solar...... cells. Among several different deposition methods available for fabrication of MoOx thin-films, reactive sputtering arises as an interesting alternative due to its full control over the deposition parameters such as the deposition power, reactive gas partial pressure and the deposition rate....

  1. thin films

    Indian Academy of Sciences (India)

    by successive ionic layer adsorption and reaction (SILAR) method at room temperature (∼300 K). The films are characterized for their ... two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with ... The mechanism of formation of SnO2:H2O film can be eluci- dated as follows. The SnCl2 ...

  2. A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2016-04-01

    In this work, we evaluated the structural, electrical and optical properties of carbon-doped Ge8Sb2Te11 thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and carbon-doped Ge8Sb2Te11 films of 250 nm in thickness were deposited on p-type Si (100) and glass substrates by using a RF magnetron reactive co-sputtering system at room temperature. The fabricated films were annealed in a furnance in the 0 ~ 400°C temperature range. The structural properties were analyzed by using X-ray diffraction (XRD), and the result showed that the carbon-doped Ge8Sb2Te11 had a face-centeredcubic (fcc) crystalline structure and an increased crystallization temperature ( T c ). An increase in the T c leads to thermal stability in the amorphous state. The optical properties were analyzed by using an UV-Vis-IR spectrophotometer, and the result showed an increase in the optical-energy band gap ( E op ) in the crystalline materials and an increase in the E op difference (Δ E op ), which is a good effect for reducing the noise in the memory device. The electrical properties were analyzed by using a 4-point probe, which showed an increase in the sheet resistance ( R s ) in the amorphous state and the crystalline state, which means a reduced programming current in the memory device.

  3. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  4. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  5. Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films

    CERN Document Server

    Mantovan, R.; Mokhles Gerami, A.; Mølholt, T. E.; Wiemer, C.; Longo, M.; Gunnlaugsson, H. P.; Johnston, K.; Masenda, H.; Naidoo, D.; Ncube, M.; Bharuth-Ram, K.; Fanciulli, M.; Gislason, H. P.; Langouche, G.; Ólafsson, S.; Weyer, G.

    The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, following dilute implantation of 57Mn (T½ = 1.5 min) at ISOLDE/CERN, to study the electronic charge distribution in the immediate vicinity  of the 57Fe probe substituting Ge (FeGe), and to interrogate the local environment of FeGe over the amorphous-crystalline phase transition in GeTe thin films. Our results show that the local structure  of as-sputtered amorphous GeTe is a combination of tetrahedral and defect-octahedral sites. The main effect of the crystallization is the conversion from tetrahedral to defect-free octahedral sites.  We discover that only the tetrahedral fraction in amorphous GeTe participates to the change of the FeGe-Te chemical bond...

  6. Thin Film Processes

    CERN Document Server

    Vossen, John L.

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application

  7. Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [CRNA/Division des Techniques Nucleaires, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.co [USTHB/Faculte de Physique, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [CRNA/Division des Techniques Nucleaires, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers (Algeria); Zemih, R. [USTHB/Faculte de Physique, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria)

    2010-01-15

    The sputtering of bismuth thin films induced by 20-160 keV Ar{sup +} ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and phi = 1.5 x 10{sup 16} cm{sup -2}, leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar{sup +} ion fluence for a fixed ion energy exhibit a significant depression at very low phi-values followed by a steady state regime above approx2.0 x 10{sup 14} cm{sup -2}. Measured sputtering yields versus Ar{sup +} ion energy with fixing ion fluence to 1.2 x 10{sup 16} cm{sup -2} in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.

  8. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  9. Optical thin film devices

    Science.gov (United States)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  10. A pseudo-single-crystalline germanium film for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Higashi, H.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kasahara, K.; Park, J.-H.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Kudo, K.; Okamoto, H.; Moto, K.; Tsunoda, I. [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan)

    2015-01-26

    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

    CERN Document Server

    Murata, K; Hori, Masaki; Goto, T; Ito, M

    2002-01-01

    We have observed mu c-Si:H films grown in the glass substrate in electron cyclotron resonance plasma-enhanced chemical vapor deposition employing two-step growth (TSG) method, where the seed layer was formed without charged species firstly, and subsequently, the film with charged species. The mu c-Si:H films with smooth surface and high crystallinity were synthesized with a relatively high deposition rate at a low substrate temperature by TSG. By Fourier transform infrared attenuated-total reflection, it was found that the surface roughness and crystallinity of seed layer were related to the ratio of SiH bonds over SiH sub 2 ones in the film. Consequently, the control of chemical bonds at the initial layer is of importance and TSG method is effective for the formation of mu c-Si:H film with high quality.

  13. High contrast fluorescence patterning in cyanostilbene-based crystalline thin films: crystallization-induced mass flow via a photo-triggered phase transition.

    Science.gov (United States)

    Park, Jin Wook; Nagano, Shusaku; Yoon, Seong-Jun; Dohi, Tomoki; Seo, Jangwon; Seki, Takahiro; Park, Soo Young

    2014-03-05

    A facile and innovative method for the fabrication of highly fluorescent micro-patterns is presented, which operates on the principle of phototriggered phase transition and physical mass migration in the crystalline film of a cyanostilbene-type aggregation-induced enhanced emission (AIEE) molecule ((Z)-2,3-bis(3,4,5-tris(dodecyloxy)phenyl) acrylonitrile) with liquid-crystalline (LC) mesomorphic behavior.

  14. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    Science.gov (United States)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  15. Correlation between microstructure and optical properties of nano-crystalline TiO{sub 2} thin films prepared by sol-gel dip coating

    Energy Technology Data Exchange (ETDEWEB)

    Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Laboratoire de Ceramiques, Universite Mentouri Constantine (Algeria); Sedrine, N. Ben; Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Bensaha, R. [Laboratoire de Ceramiques, Universite Mentouri Constantine (Algeria)

    2010-11-15

    Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. TiO{sub 2} thin films prepared using a sol-gel process have been analyzed for different annealing temperatures. Structural properties in terms of crystal structure were investigated by Raman spectroscopy. The surface morphology and composition of the films were investigated by atomic force microscopy (AFM). The optical transmittance and reflectance spectra of TiO{sub 2} thin films deposited on silicon substrate were also determined. Spectroscopic ellipsometry study was used to determine the annealing temperature effect on the optical properties and the optical gap of the TiO{sub 2} thin films. The results show that the TiO{sub 2} thin films crystallize in anatase phase between 400 and 800 deg. C, and into the anatase-rutile phase at 1000 deg. C, and further into the rutile phase at 1200 deg. C. We have found that the films consist of titanium dioxide nano-crystals. The AFM surface morphology results indicate that the particle size increases from 5 to 41 nm by increasing the annealing temperature. The TiO{sub 2} thin films have high transparency in the visible range. For annealing temperatures between 1000 and 1400 deg. C, the transmittance of the films was reduced significantly in the wavelength range of 300-800 nm due to the change of crystallite phase and composition in the films. We have demonstrated as well the decrease of the optical band gap with the increase of the annealing temperature.

  16. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  17. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin

    2017-09-12

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  18. Multifunctional thin film surface

    Science.gov (United States)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  19. Sputtered Thin Film Research

    Science.gov (United States)

    1974-11-01

    and Idonllly hy block numbor) Reactive Sputtering, Heteroepitaxy, Thin Films Single Crystal Zinc Oxide, Titanium Dioxide, Aluminum Nitride, Gallium...Conditions were determined for the deposition of amorphous neodymium ultra- phosphate films. This material holds the potential for the fabrication...reaching the substrate at any time during sputtering. A 17.2 cm diameter quartz plate was covered with a thin coating of zinc sulflde and placed on

  20. Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices

    Science.gov (United States)

    Hu, Yu Min; Li, Jung Yu; Chen, Nai Yun; Chen, Chih Yu; Han, Tai Chun; Yu, Chin Chung

    2017-02-01

    The crystallinity and intrinsic defects of transparent conducting oxide (TCO) films have a high impact on their optical and electrical properties and therefore on the performance of devices incorporating such films, including flat panel displays, electro-optical devices, and solar cells. The optical and electrical properties of TCO films can be modified by tailoring their deposition parameters, which makes proper understanding of these parameters crucial. Magnetron sputtering is the most adaptable method for preparing TCO films used in industrial applications. In this study, we investigate the direct and inter-property correlation effects of sputtering power (PW) on the crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO (AZO) TCO films. All of the films were preferentially c-axis-oriented with a wurtzite structure and had an average transmittance of over 80% in the visible wavelength region. Scanning electron microscopy images revealed significantly increased AZO film grain sizes for PW ≥ 150 W, which may lead to increased conductivity, carrier concentration, and optical band gaps but decreased carrier mobility and in-plane compressive stress in AZO films. Photoluminescence results showed that, with increasing PW, the near band edge emission gradually dominates the defect-related emissions in which zinc interstitial (Zni), oxygen vacancy (VO), and oxygen interstitial (Oi) are possibly responsible for emissions at 3.08, 2.8, and 2.0 eV, respectively. The presence of Zni- and Oi-related emissions at PW ≥ 150 W indicates a slight increase in the presence of Al atoms substituted at Zn sites (AlZn). The presence of Oi at PW ≥ 150 W was also confirmed by X-ray photoelectron spectroscopy results. These results clearly show that the crystallinity and intrinsic-defect type of AZO films, which dominate their optical and electrical properties, may be controlled by PW. This understanding may facilitate the development of TCO

  1. Effect of crystalline structure of TiO{sub 2} substrates on initial growth of atomic layer deposited Ru thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong Keun; Han, Sora; Han, Jeong Hwan [WCU Hybrid Materials Program, Department of Materials Science and Engineering and Interuniversity, Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [WCU Hybrid Materials Program, Department of Materials Science and Engineering and Interuniversity, Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)

    2011-02-15

    Ru thin films were grown on polymorphic TiO{sub 2} thin film substrates at 230 and 250 deg. C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O{sub 2} gas. While the Ru films grown on amorphous and rutile TiO{sub 2} substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250 deg. C, respectively, the Ru films grown on anatase TiO{sub 2} substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO{sub 2}. This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO{sub 2} substrates.

  2. Elaboration and characterization of crystalline RF-deposited V{sub 2}O{sub 5} positive electrode for thin film batteries

    Energy Technology Data Exchange (ETDEWEB)

    Oukassi, S., E-mail: sami.oukassi@cea.fr [CEA, DTNM/LCMS, 17 rue des martyrs, 38054 Grenoble (France); Salot, R. [CEA, DTNM/LCMS, 17 rue des martyrs, 38054 Grenoble (France); Pereira-Ramos, J.P. [ICMPE, UMR CNRS 7182, GESMAT, 2 rue Henri Dunant, 94320 Thiais (France)

    2009-10-15

    Investigations were realized on the microstructural and morphological evolution of RF-sputtered vanadium pentoxide thin films during growth. V{sub 2}O{sub 5} thin films at different stages of growth were studied by spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy and scanning electron microscopy. Film grain orientation, roughness and density were found to have notable evolution during growth. Electrochemical tests in liquid and solid electrolyte state configuration showed non-linear relationship between discharge capacity and V{sub 2}O{sub 5} film thickness (<1 {mu}m), which could be attributed in parts to the observed morphological and microstructural changes during growth, mainly the existence of a gradient density through film thickness and the pronounced top surface roughness.

  3. Nanoscale confinement and interfacial effects on the dynamics and glass transition/crystallinity of thin adsorbed films on silica nanoparticles

    Science.gov (United States)

    Madathingal, Rajesh Raman

    the silica aggregates. For nanocomposites the interphase region becomes more important as the surface/volume ratio of the nanoparticles increases. Polymers have chain dimensions (characterized by the radius of gyration, Rg) similar to the nanoparticles (Rnanoparticle) themselves, so that chain conformation, mobility and crystallinity can be affected by Rg/Rnanoparticle. Here, both the glass transition temperature (Tg) and degree of crystallinity (Xc) of polyethylene oxide (PEO) on individual SiO 2 nanoparticles of nominal 15, 50 and 100 nm diameter (2 RSiO2 ) , in which Rg (PEO) was greater, equal to or less than RSiO2 was investigated. Plateau adsorption of PEO on SiO2 nanoparticles (PEO-SiO2) increased in the order PEO-SiO 2 (100 nm) > PEO-SiO2 (50 nm) > PEO-SiO2 (15 nm). At plateau adsorption after melting and solidification, the samples were completely amorphous. The Tg of the adsorbed PEO increased in the order PEO-SiO 2 (100 nm) > PEO-SiO2 (50 nm) > PEO-SiO2 (15 nm); since the Tgs were above 25°C in all cases, the PEO behaved more like a brittle solid than an elastomer. For comparable amounts of PEO that were adsorbed from solution but not melted, the melt endotherm increased in the order PEO-SiO2 (15 nm) > PEO-SiO2 (50 nm) > PEO-SiO 2 (100 nm). These trends were interpreted as due to an increase in loop/tail lengths and thus flexibility, with a concomitant ability to crystallize, as Rg (PEO)/RSiO2 decreased and which was the result of less hydrogen bond formation between the oxygens of PEO and the silanols (SiOH) of the SiO 2 as the nanoparticle size decreased. This in turn was attributed to the energetically unfavorable conformations necessary for the PEO chains to adopt in order to hydrogen bond with silanols on the smaller nanoparticles. The degradation behavior of amorphous PMMA and semicrystalline PEO on silica (SiO2) nanoparticles as a function of silanol density and nanoparticle size was investigated by derivative thermogravimetric analysis (DTGA) for

  4. An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    J. Podder

    2011-11-01

    Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

  5. Laser processing for thin-film photovoltaics

    Science.gov (United States)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  6. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  7. Thin film photovoltaic device

    Science.gov (United States)

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  8. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  9. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  10. Crystalline phase control and growth selectivity of β-MnO{sub 2} thin films by remote plasma assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abi-Akl, M.; Tabbal, M., E-mail: malek.tabbal@aub.edu.lb; Kassem, W.

    2016-08-01

    In this paper, we exploit the effect of coupling an oxygen remote plasma source to Pulsed Laser Deposition (PLD) for the growth of pure and well crystallized β-MnO{sub 2} films. Films were grown on Si substrates by laser ablation of a MnO target in oxygen ambient and remote plasma. X-Ray Diffraction, Fourier Transform Infra-Red spectroscopy and Raman scattering were used to determine the crystalline structure and bonding in the grown layers, whereas Atomic Force Microscopy was used to study their morphology and surface roughness. Deposition at 500 °C and high oxygen pressure (33.3–66.6 Pa) resulted in the formation of films with roughness of 12 nm consisting of nsutite γ-MnO{sub 2}, a structure characterized by the intergrowth of the pyrolusite β-MnO{sub 2} in a ramsdellite R-MnO{sub 2} matrix. Deposition at the same temperature but low pressure (1.33–3.33 Pa) in oxygen ambient lead to the formation of Mn{sub 2}O{sub 3} whereas plasma activation within the same pressure range induced the growth of single phase highly crystalline β-MnO{sub 2} having smooth surfaces with a roughness value of 0.6 nm. Such results underline the capability of remote plasma assisted PLD in selecting and controlling the crystalline phase of manganese oxide layers. - Highlights: • MnO{sub 2} films were grown by Remote Plasma Assisted Pulsed Laser Deposition. • Crystalline MnO{sub 2} is formed at a substrate temperature of 500 °C. • Smooth crystalline single phase β-MnO{sub 2} films were obtained at 1.33–3.33 Pa. • Deposition at 1.33–3.33 Pa without plasma activation lead to the growth of Mn{sub 2}O{sub 3}. • Without plasma, mixed phases of MnO{sub 2} polymorphs are obtained at 33.3 Pa and above.

  11. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  12. Thin Crystalline Gallium Arsenide Optoelectronic Devices

    Science.gov (United States)

    Patkar, Mahesh Pandharinath

    1995-01-01

    The numerous existing and developing applications for two closely related devices, III-V light emitting diode (LEDs) and solar cells, demand improved device efficiencies. Removing the substrate should increase the efficiency of both LEDs and solar cells by eliminating the absorption losses in the substrate. We have used the phenomenon of photon recycling in thin-crystalline device geometries to enhance efficiencies of LEDs and solar cells. GaAs LEDs were fabricated and removed from the substrate by the epitaxial lift-off process. Devices with and without an underlying GaAs substrate were then characterized by optical and electrical measurements. Efficiency enhancements of up to a factor of six were achieved. By carefully analyzing the electrical and optical measurements, we demonstrate that the device operation can be explained in terms of accepted theories for radiative recombination and photon recycling which supports our hypothesis that the efficiency enhancement is due to photon recycling in the thin-crystalline device structure. Electrical and optical characterization of ELO LEDs is also shown to be a convenient diagnostic tool for examining recombination losses in thin-crystalline solar cells. Thin crystalline solar cells were fabricated and characterized by I-V and QE measurements. Alloyed ohmic contacts are used extensively for GaAs devices. However, alloyed contacts produce rough interfaces that do not make good reflectors needed for many optoelectronic devices. Non-alloyed ohmic contacts to optoelectronic devices could make good reflectors, if one uses highly reflective metal like Au to make an ohmic contact. Ex-situ non-alloyed contacts to n-GaAs were made by using low temperature molecular beam epitaxy. Ag and Ti/Au contacts to this structure exhibited specific contact resistivities of mid 10^{-7} Omega-cm^2. Low temperature molecular beam epitaxy of GaAs with high concentrations of Be followed by an anneal under As over pressure was used to minimize

  13. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  14. Substrate temperature study in the crystallinity of BaTiO{sub 3} thin films; Estudio de la temperatura de crecimiento sobre la cristalinidad en peliculas delgadas de BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marquez-Herrera, Alfredo [Coordinacion Academica Region Altiplano (COARA), Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico)]. E-mail: amarquez@mixteco.utm.mx; Hernandez-Rodriguez, Eric Noe; Zapata-Torres, Martin Guadalupe [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Instituto Politecnico Nacional (Mexico)]. E-mails: noehmx@hotmail.com; mzapatat@ipn.mx; Cruz-Jauregui, Maria de la Paz [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico (Mexico)]. E-mail: mcruz@cnyn.unam.mx; Melendez-Lira, Miguel angel [Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional (Mexico)]. E-mail: mlira@fis.cinvestav.mx

    2013-07-15

    Ferroelectric thin films of BaTiO{sub 3} (BTO) were grown on quartz and nichrome substrates using a BaTiO{sub 3} target by RF-Sputtering technique. It was studied the effect of the substrate temperature in the crystallization of the material. These samples were compared with films deposited at room temperature and heat treated out of the growth Chamber. Their crystallinity were studied by X-ray diffraction. Additionally, the optical characterizations were carried out by UV-Vis spectrophotometer. The growth of thin films with substrate temperature allows the obtaining of crystalline materials at temperatures below those reported by other authors. [Spanish] Peliculas delgadas Ferroelectricas de BaTiO{sub 3} (BTO) se depositaron a partir de un blanco de BaTiO{sub 3} mediante la tecnica de RF-Sputtering (erosion catodica por radio frecuencia) sobre substratos de nicromel y cuarzo. Se estudio el efecto de la temperatura de sustrato in-situ en la cristalinidad del material durante su deposito. Estas muestras fueron comparadas con peliculas depositadas a temperatura ambiente y tratadas termicamente posterior al deposito fuera de la camara de crecimiento. El estudio de la cristalinidad fue realizado mediante la tecnica de difraccion de rayos-X. Adicionalmente, se llevaron a cabo caracterizaciones opticas mediante un espectrofotometro UV-Vis. El crecimiento de peliculas delgadas con temperatura de sustrato permite la obtencion de materiales cristalinos a temperaturas por debajo de las reportadas por otros autores.

  15. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  16. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  17. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  18. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  19. Laser applications in thin-film photovoltaics

    Science.gov (United States)

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2010-08-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

  20. Dewetting of Thin Polymer Films

    Science.gov (United States)

    Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

    2001-03-01

    DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

  1. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  2. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China (China); Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Liu, Xuehua; Zhang, Jinping; Zhang, Yi [Platform for Characterization & Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Fang, Qi; Ren, Zhong [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Bai, Yu [School of Nano-Science and Nano-Engineering, Xi’an Jiaotong University, Suzhou, 215123 (China)

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  3. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  4. Zeeman-limited Superconductivity in Crystalline Al Films

    Science.gov (United States)

    Adams, Philip; Nam, Hyoundo; Shih, Chin-Kang; Catalani, Gianluigi

    We report the evolution of the Zeeman-limited superconducting phase diagram (PD) in ultra-thin crystalline Al films. Parallel critical field measurements, down to 50 mK, were made across the superconducting tricritical point of epitaxially-grown Al films ranging in thickness from 7 monolayers (ML) to 30 ML. The resulting phase boundaries were compared with the quasi-classical theory of a Zeeman-mediated transition between a homogeneous BCS condensate and a spin polarized Fermi liquid. Films thicker than 20 ML showed good agreement with theory, but thinner films exhibited an anomalous PD that cannot be reconciled within a homogeneous BCS framework. DE-FG02-07ER46420, ONR-N00014-14-1-0330, NSF- DMR-1506678, CIG-618258.

  5. Structural phase study in un-patterned and patterned PVDF semi-crystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Pramod, K., E-mail: rameshg.phy@pondiuni.edu.in; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu.in [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

    2014-04-24

    This work explores the structural phase studies of organic polymer- polyvinylidene fluoride (PVDF) thin films in semi-crystallized phase and nano-patterned PVDF thin films. The nanopatterns are transferred with the CD layer as a master using soft lithography technique. The semi-crystalline PVDF films were prepared by a still and hot (SH) method, using a homemade spin coater that has the proficiency of substrate heating by a halogen lamp. Using this set up, smooth PVDF thin films in semi-crystalline α-phase were prepared using 2-Butanone as solvent. XRD, AFM and confocal Raman microscope have been utilized to study the structural phase, crystallinity and quality of the films.

  6. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  7. Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeong Dae; Son, Jong Yeog

    2015-07-01

    Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel's scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.

  8. Polymer Thin Film Stabilization.

    Science.gov (United States)

    Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

    1998-03-01

    We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

  9. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  10. Center for Thin Film Studies

    Science.gov (United States)

    1988-10-31

    12 (3.22) To understand (3.22) requires a basic knowledge of differential geometry (Do Carmo , 1976). The determinant and trace of M1dj are the...A.G. Dirks and H.J. Leamy, "Columnar Microstructure in Vapour Deposited Thin Films," Thin Solid Films 47 219-233 (1977). M.P. Do Carmo , Differential

  11. Thin films: Past, present, future

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  12. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    oriented ZnO:Ga  thin   films   deposited  on  glass  by  laser   ablation   at  different  deposition  temperatures.  The  surface  morphology,  crystalline...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 1    Review of Zinc Oxide Thin Films   Abstract  The present review  paper  reports on the...resistivity provided by indium‐doped  tin  oxide (ITO)  ~ 0.7 x 10‐4 Ω‐cm achieved by deposition of  ITO  films  on glass at 300 oC by pulsed  Laser

  13. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  14. Thin film hydrogen sensor

    Science.gov (United States)

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  15. Enhanced Thermoelectric Power Factor of NaxCoO2 Thin Films by Structural Engineering

    NARCIS (Netherlands)

    Brinks, Peter; Kuiper, Bouwe; Breckenfeld, E.; Koster, Gertjan; Martin, L.W.; Rijnders, Augustinus J.H.M.; Huijben, Mark

    2014-01-01

    By controlling the crystallinity and average grain size of thermoelectric NaxCoO2 thin films, a doubling of the thermoelectric power factor is achieved in combination with a strong suppression of the thermal conductivity. These structurally engineered NaxCoO2 thin films outperform single crystalline

  16. Reorientation of magnetic anisotropy in epitaxial cobalt ferrite thin films

    NARCIS (Netherlands)

    Lisfi, A.; Williams, C.M.; Nguyen, L.T.; Lodder, J.C.; Coleman, A.; Corcoran, H.; Johnson, A.; Chang, P.; Abhishek Kumar, A.K.; Kumar, A.; Morgan, W.

    2007-01-01

    Spin reorientation has been observed in CoFe2O4 thin single crystalline films epitaxially grown on (100) MgO substrate upon varying the film thickness. The critical thickness for such a spin-reorientation transition was estimated to be 300 nm. The reorientation is driven by a structural transition

  17. A TSM sensor investigation of low crystallinity cellulose films.

    Science.gov (United States)

    Reason, M; Teesdale-Spittle, P; Latham, R; Dawson, G; Porteous, P; Smith, G

    2001-07-03

    A thickness shear mode (TSM) quartz sensor has been used to characterize the substantivity, viscoelasticity, and mucoadhesive properties of low crystallinity cellulose (LCC) films. LCC is a novel pharmaceutical excipient that has been attributed with mucoadhesive properties. Thin films of LCC were deposited onto TSM sensors by a spin coating technique. The films were treated by passing water or 1.0% w/v mucin solution (pH 3.7 or 7.0) over the surface. Changes in the mass and viscosity of the film were observed by monitoring changes in the impedance spectra of the coated TSM sensors. Scanning electron micrographs (SEMs) of each film were used to assist the interpretation of the TSM sensor data. This study showed that LCC forms highly tenacious and viscoelastic films able to withstand prolonged (approximately 1 h) exposure to both water and mucin solution. Furthermore, these results indicate that the films may have mucoadhesive properties as LCC was found to bind significant (P<0.05) amounts of mucin in comparison with control measurements. Mucin binding to the LCC sensor was greater at pH 3.7 (P<0.05) than at pH 7.0, suggesting that the LCC formulation is mucoadhesive under these conditions.

  18. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  19. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

    Science.gov (United States)

    Chen, Po-Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young-geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E; Zhou, Chongwu

    2009-11-24

    We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

  20. Waveguiding thin Y2O3 films grown on sapphire substrates

    NARCIS (Netherlands)

    Kuzminykh, Y.; Bär, S.; Scheife, H.; Huber, G.; Apostolopoulos, V.; Pollnau, Markus

    Thin crystalline and amorphous yttria films have been produced using pulsed laser deposition and electron beam evaporation methods. Planar waveguiding in amorphous yttria films produced by electron beam evaporation has been demonstrated.

  1. Waveguiding thin Y2O3 films grown on sapphire substrates

    OpenAIRE

    Kuzminykh, Y.; Bär, S.; Scheife, H.; Huber, G; Apostolopoulos, V.; Pollnau, Markus

    2004-01-01

    Thin crystalline and amorphous yttria films have been produced using pulsed laser deposition and electron beam evaporation methods. Planar waveguiding in amorphous yttria films produced by electron beam evaporation has been demonstrated.

  2. Surface Morphology of Zinc Oxide Thin Films deposited by TCVD

    Science.gov (United States)

    Rafaie, H. A.; Noor, F. W. M.; Amizam, S.; Abdullah, S.; Rusop, M.

    2010-03-01

    Surface morphology study of Zinc Oxide (ZnO) thin films by using Thermal Chemical Vapor Deposition (Thermal-CVD) was investigated. The ZnO compound was synthesized from zinc acetate dehydrate which act as a starting material to form the ZnO thin films. It was deposited on as-prepared Nanonstructured Silicon (NSi) with deposition temperature ranging from 400-600° C without catalyst-assisted. The surface morphology of the samples before and after the deposition process was examined by using Analytical Scanning Electron Microscope (SEM). The result shows that the obtained ZnO thin films possess good crystalline structure at deposition temperature of 600° C and the surface morphologies of the ZnO thin films improved greatly with an increase in deposition temperature. XRD was employed to study the evolution of the crystalline orientation using X-Ray Diffractrometer (XRD).

  3. No fear of thin films; Frykter ikke tynnfilm

    Energy Technology Data Exchange (ETDEWEB)

    Abelsen, Atle

    2006-07-01

    New investments in crystalline silicon based solar cells are made by the Norwegian companies Elkem Solar and REC Group, despite the increased competition from polymer based thin film solar cells. A new production method named solar grade silicon will reduce the production costs. Thin films are also less effective, with 5-6 percent efficiency compared to silicon based solar cells with 15-20 percent efficiency.

  4. Study of zinc oxide thin film characteristics

    Science.gov (United States)

    Johari, Shazlina; Yazmin Muhammad, Nazalea; Rosydi Zakaria, Mohd

    2017-11-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  5. Density of organic thin films in organic photovoltaics

    Science.gov (United States)

    Zhao, Cindy X.; Xiao, Steven; Xu, Gu

    2015-07-01

    A practical parameter, the volume density of organic thin films, found to affect the electronic properties and in turn the performance of organic photovoltaics (OPVs), is investigated in order to benefit the polymer synthesis and thin film preparation in OPVs. To establish the correlation between film density and device performance, the density of organic thin films with various treatments was obtained, by two-dimensional X-ray diffraction measurement using the density mapping with respect to the crystallinity of thin films. Our results suggest that the OPV of higher performance has a denser photoactive layer, which may hopefully provide a solution to the question of whether the film density matters in organic electronics, and help to benefit the OPV industry in terms of better polymer design, standardized production, and quality control with less expenditure.

  6. Annealing temperature effect on the optical properties of thermally oxidized nano-crystalline ZrO2 thin films grown on glass substrates

    Science.gov (United States)

    Larijani, M. M.; Hasani, E.; Safa, S.

    2014-01-01

    Optical properties of zirconium oxide films on glass substrates deposited by thermal oxidation method have been studied at different temperatures. Optical characteristics of films such as refractive index, extinction coefficient, average thickness and optical dielectric constants were calculated using Swanepoel's method. X-ray diffraction analysis (XRD) and atomic force microscopy were performed to investigate the film structure and morphology. It was found out that the optical properties of zirconium oxide films are affected by oxidation temperature which are due to changes of film microstructure and surface roughness.

  7. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  8. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  9. Sputtered Thin Film Research

    Science.gov (United States)

    1976-02-01

    influences substrate heating and uniformity of the deposition Th. ing .50 L/sec in the milxitorr range. Use of the turbomolecular pump in place...evaluation of the films eposited. Prior to film deposition the wafers were degreased, boiled in nitric acid rinsed in high resitivity deionized...the shutters were opened and film depositxon was initiated. After film deposition, heat treatments in nitrogen, hydrogen and oxygen were investigated

  10. Thin Films for Thermoelectric Applications

    Science.gov (United States)

    Silva, M. F.; Ribeiro, J. F.; Carmo, J. P.; Gonçalves, L. M.; Correia, J. H.

    The introduction of nanotechnology opened new horizons previously unattainable by thermoelectric devices. The nano-scale phenomena began to be exploited through techniques of thin-film depositions to increase the efficiency of thermoelectric films. This chapter reviews the fundamentals of the phenomenon of thermoelectricity and its evolution since it was discovered in 1822. This chapter also reviews the thermoelectric devices, the macro to nano devices, describing the most used techniques of physical vapor depositions to deposit thermoelectric thin-films. A custom made deposition chamber for depositing thermoelectric thin films by the thermal co-evaporation technique, where construction issues and specifications are discussed, is then presented. All the steps for obtaining a thermoelectric generator in flexible substrate with the custom deposition chamber (to incorporate in thermoelectric microsystems) are described. The aim of thermoelectric microsystem relays is to introduce an energy harvesting application to power wireless sensor networks (WSN) or biomedical devices. The scanning probe measuring system for characterization of the thermoelectric thin films are also described in this chapter. Finally, a few of the prototypes of thermoelectric thin films (made of bismuth and antimony tellurides, {Bi}2{Te}3, and {Sb}2{Te}3, respectively) obtained by co-evaporation (using the custom made deposition chamber) and characterized for quality assessment are dealt with. All the issues involved in the co-evaporation and characterization are objects of analysis in this chapter.

  11. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donguk [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Park, Young [High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Kim, Minha [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Choi, Youngkwan [Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of); Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  12. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    CERN Document Server

    Ede, A

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with ...

  13. Infrared spectra of thin films of α-crystalline hexafluoroethane: a manifestation of resonant dipole-dipole interaction in the range of fundamental vibrational modes ν5 and ν10

    Science.gov (United States)

    Golubkova, O. S.; Kataeva, T. S.; Shchepkin, D. N.; Asfin, R. E.

    2017-06-01

    Infrared reflection-absorption spectra of thin films of α-crystalline hexafluoroethane deposited on a gold-plated copper mirror are measured at temperatures of 70 and 80 K. The bands corresponding to strong in the dipole absorption vibrations ν5 and ν10 have complex contours, the shape of which is explained in terms of the resonant dipole-dipole interaction between identical spectrally active molecules of the crystal. Splittings of the complex ν5 and ν10 bands are explained taking into account two effects: the Davydov splitting and the LO-TO splitting of the strong modes. Bands of the asymmetric 13C12CF6 isotopologue in the absorption spectrum of the crystal exhibit an anomalously large isotope shift as compared with the shift in the spectrum of free molecules. This anomaly is explained by intermolecular resonant dipole-dipole interaction of asymmetric 13C12CF6 isotopologue with molecules of the environment, consisting of the most abundant 12C2F6 isotopologue. The correctness of the given interpretation is confirmed calculating these three effects in the model of resonant dipole-dipole interaction.

  14. Exploiting Elasticity with Thin Polymer Films

    Science.gov (United States)

    Croll, Andrew

    2014-03-01

    Soft matter is often dominated by long-ranging mechanical distortion and is thus intimately linked to elastic theory. The detailed understanding provided by theory has allowed remarkable technological achievements to be made with polymers and other soft systems. However, as technology pushes lengthscales downward many challenges have arisen and even basic problems such as measuring Young's modulus become difficult. To move forward, many polymer thin-film researchers have been attracted to the simple repetitive buckling pattern known as wrinkling because the instability provides a convenient tool to measure mechanical properties. As with all technology the wrinkle system does have physical limits on its applicability, several of which may not be obvious and may have implications for extreme measurement. Here we highlight some of our recent work examining the limits of this elastic pattern and the implications for thin polymer films. We first show how the morphology of ultra-thin wrinkled polystyrene and polystyrene-block-poly(2-vinylpyridine) films show signs of localization effects - a clear deviation from linear elasticity. We go on to show how roughness, in certain cases, can induce similar morphologies, even in the limits of vanishing applied stress. As random roughness influences a film's elastic behaviour it is natural to examine periodic roughness as means to control localization and create more complex morphologies. Colloidal polystyrene is an excellent test material as it can easily be assembled in highly ordered crystalline monolayers. Remarkably, this ``discrete'' polymer film shows the same wrinkled morphology as does a continuum film. We show how a completely different type of elasticity is necessary to explain the effect, that of a granular material. More disordered ``glassy'' colloidal monolayers provide a means to push our understanding of the granular elastic theory, and suggest an interesting, albeit highly speculative limit for extreme continuum

  15. Spatial atomic layer deposition of zinc oxide thin films

    NARCIS (Netherlands)

    Illiberi, A.; Roozeboom, F.; Poodt, P.W.G.

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and

  16. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    Science.gov (United States)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  17. Crystal coherence length effects on the infrared optical response of MgO thin films

    Science.gov (United States)

    Ihlefeld, J. F.; Ginn, J. C.; Shelton, D. J.; Matias, V.; Rodriguez, M. A.; Kotula, P. G.; Carroll, J. F.; Boreman, G. D.; Clem, P. G.; Sinclair, M. B.

    2010-11-01

    The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

  18. Nanocrystal thin film fabrication methods and apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  19. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    RACHANA GUPTA1,∗, MUKUL GUPTA2 and THOMAS GUTBERLET3. 1VES College of Arts, Science and Commerce, Sindhi Society, Chembur, Mumbai 400 071,. India. 2UGC-DAE Consortium for ... E-mail: dr.rachana.gupta@gmail.com. Abstract. Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture.

  20. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was ... 3.1 Reaction mechanism. CdTe thin films were grown on micro ...

  1. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  2. FY 1997 report on the study on the formation condition of hetero-structure of single-crystalline semiconductor thin films; 1997 nendo chosa hokokusho (tankessho no handotai usumaku hetero kozo no keisei joken ni kansuru kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Since ion implantation causes material degradation by formation of crystalline defects, and hydrogen embrittlement deteriorates material strength, reduction of such defects has been positively studied. Study was made on a new active application of hydrogen separation into ion implantation defects. After H ion implantation of a proper depth into single-crystalline Si and SiC and successive annealing, single-crystalline films of sub-micron to several micron thick were obtained by hydrogen-induced delamination at the implantation depth due to hydrogen embrittlement in crystalline defects. The implantation depth is dependent on implantation energy. H atom forms (111) face defect through connection with dangling bond of crystalline defects. This crystal face defect forms a delamination plane through (100) face cleavage. This hydrogen embrittlement delamination by ion implantation is applicable to production of light-weight high-efficiency single-crystalline Si solar cells, and large single-crystalline SiC wafers as new resource saving process. 33 refs., 19 figs., 2 tabs.

  3. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ∼321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  4. Morphology of Cellulose and Cellulose Blend Thin FilmsMorphology of cellulose and cellulose blend thin films

    Science.gov (United States)

    Lu, Rui

    Cellulose is the most abundant, renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. It is useful to study amorphous cellulose as most reactions happen in the non-crystalline regions first and at the edge of crystalline regions. In this study, amorphous thin films of cotton linter cellulose with various thicknesses were spincoated on silicon wafers from cellulose solutions in dimethyl sulfoxide / ionic liquid mixtures. Optical microscopy and atomic force microscopy indicated that the morphology of as-cast films was sensitive to the film preparation conditions. A sample preparation protocol with low humidity system was developed to achieve featureless smooth films over multiple length scales from nanometers to tens of microns. X-ray reflectivity, X-ray diffraction, Fourier transform infrared spectroscopy and high resolution sum-frequency generation vibrational spectroscopy were utilized to confirm that there were no crystalline regions in the films. One- and three- layer models were used to analyze the X-ray reflectivity data to obtain information about roughness, density and interfacial roughness as a function of film thickness from 10-100nm. Stability tests of the thin films were conducted under harsh conditions including hot water, acid and alkali solutions. The stability of thin films of cellulose blended with the synthetic polymer, polyacrylonitrile, was also investigated. The blend thin films improved the etching resistance to alkali solutions and retained the stability in hot water and acid solutions compared to the pure cellulose films.

  5. Exceptionally crystalline and conducting acid doped polyaniline films by level surface assisted solution casting approach

    Energy Technology Data Exchange (ETDEWEB)

    Puthirath, Anand B.; Varma, Sreekanth J.; Jayalekshmi, S., E-mail: jayalekshmi@cusat.ac.in [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India); Methattel Raman, Shijeesh [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India)

    2016-04-18

    Emeraldine salt form of polyaniline (PANI) was synthesized by chemical oxidative polymerisation method using ammonium persulfate as oxidant. Resultant emeraldine salt form of PANI was dedoped using ammonia solution and then re-doped with camphor sulphonic acid (CSA), naphthaline sulphonic acid (NSA), hydrochloric acid (HCl), and m-cresol. Thin films of these doped PANI samples were deposited on glass substrates using solution casting method with m-cresol as solvent. A level surface was employed to get homogeneous thin films of uniform thickness. Detailed X-ray diffraction studies have shown that the films are exceptionally crystalline. The crystalline peaks observed in the XRD spectra can be indexed to simple monoclinic structure. FTIR and Raman spectroscopy studies provide convincing explanation for the exceptional crystallinity observed in these polymer films. FESEM and AFM images give better details of surface morphology of doped PANI films. The DC electrical conductivity of the samples was measured using four point probe technique. It is seen that the samples also exhibit quite high DC electrical conductivity, about 287 S/cm for CSA doped PANI, 67 S/cm for NSA doped PANI 65 S/cm for HCl doped PANI, and just below 1 S/cm for m-cresol doped PANI. Effect of using the level surface for solution casting is studied and correlated with the observed crystallinity.

  6. Large area, soft crystalline thin films of N,N' ,N''> -trialkyltriazatriangulenium salts with homeotropic alignment of the discotic cores in a lamellar lattice

    DEFF Research Database (Denmark)

    Just Sørensen, Thomas; Hildebrandt, Christoffer B.; Elm, Jonas

    2012-01-01

    N,N' ,N'' -Trialkyltriazatriangulenium (R-TATA+) tetrafluoroborate (BF4) salts form highly ordered thin films directly when spin-cast onto rotating substrates. The homogeneous and crystalline thin films show macroscopic order over centimetres. The crystal structures of the R-TATA$BF4 salts are in...

  7. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  8. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  9. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  10. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  11. Terahertz study of hole transport in pentacene thin films

    Science.gov (United States)

    Engelbrecht, Stefan G.; Prinz, Markus; Arend, Thomas R.; Kersting, Roland

    2014-10-01

    Terahertz electromodulation spectroscopy is a novel tool for studying charge carrier transport in polycrys­talline thin films. The technique selectively probes the high-frequency response of mobile carriers and is insensitive to scattering at grain boundaries as well as to trapping processes. In thin films of pentacene we find a hole mobility of 21 cm2 /Vs, which exceeds the largest previously reported values obtained in poly­ crystalline pentacene. Additionally, the data provide an upper limit of the hole conductivity effective mass of mh ≍ 0.8 me.

  12. CZTS nanoparticle absorber layer for thin film solar cells

    DEFF Research Database (Denmark)

    Symonowicz, Joanna; Jensen, Kirsten M. Ørnsbjerg; Engberg, Sara Lena Josefin

    Cu2ZnSnS4 (CZTS) thin film solar cells have the potential to revolutionize the solar energy market. They are cheap, non-toxic and present an efficiency up to 9,2% [1]. However, to commercialize CZTS nanoparticle thin films, the efficiency issues must yet be resolved. There are various fabrication...... is furthermore characterized. Photoluminescence measurements indicate which absorber layer are of higher efficiency, which allows us to study why some crystalline configurations enhance the efficiency of resulting solar cells....

  13. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  14. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  15. Structural evolution during chemical vapor deposition of diamond thin films

    Science.gov (United States)

    Morell, G.; Cancel, L. M.; Figueroa, O. L.; González, J. A.; Weiner, B. R.

    2000-11-01

    In situ phase-modulated ellipsometry was employed to monitor the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The effective extinction coefficient (k) at 1.96 eV was used as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. Ex situ characterization of the films was performed using Raman spectroscopy, scanning electron microscopy, and x-ray diffraction. The results indicate that the diamond film deposition process consists of various stages in which the crystalline quality, the net compressive stress, and the relative amount of non-sp3 carbon follow different trends. A correlation between the effective k value measured in situ and the film microstructure characterized ex situ was established which enables the monitoring of the diamond film growth process in real time.

  16. Interface induced crystal structures of dioctyl-terthiophene thin films.

    Science.gov (United States)

    Werzer, Oliver; Boucher, Nicolas; de Silva, Johann P; Gbabode, Gabin; Geerts, Yves H; Konovalov, Oleg; Moser, Armin; Novak, Jiri; Resel, Roland; Sferrazza, Michele

    2012-06-05

    Temperature dependent structural and morphological investigations on semiconducting dioctyl-terthiophene (DOTT) thin films prepared on silica surfaces reveals the coexistence of surface induce order and distinct crystalline/liquid crystalline bulk polymorphs. X-ray diffraction and scanning force microscopy measurements indicate that at room temperature two polymorphs are present: the surface induced phase grows directly on the silica interface and the bulk phase on top. At elevated temperatures the long-range order gradually decreases, and the crystal G (340 K), smectic F (348 K), and smectic C (360 K) phases are observed. Indexation of diffraction peaks reveals that an up-right standing conformation of DOTT molecules is present within all phases. A temperature stable interfacial layer close to the silica-DOTT interface acts as template for the formation of the different phases. Rapid cooling of the DOTT sample from the smectic C phase to room temperature results in freezing into a metastable crystalline state with an intermediated unit cell between the room temperature crystalline phase and the smectic C phase. The understanding of such interfacial induced phases in thin semiconducting liquid crystal films allows tuning of crystallographic and therefore physical properties within organic thin films.

  17. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  18. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform ...

  19. Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    From X-ray diffraction measurement, the deposited film was found to be amorphous and turns crystalline at 500°C. The deposited film showed excellent adherence to the substrate and was characterized by homogeneous flat surface. TiO2 thin films can be used as a photocatalyst to clean up organohalides, a class of ...

  20. Thin polymeric films for building biohybrid microrobots.

    Science.gov (United States)

    Ricotti, Leonardo; Fujie, Toshinori

    2017-03-06

    This paper aims to describe the disruptive potential that polymeric thin films have in the field of biohybrid devices and to review the recent efforts in this area. Thin (thickness  3D systems, new advanced materials to be used for the fabrication of thin films, cell engineering opportunities and modelling/computational efforts.

  1. Thin-film structure of semiconducting end-capped oligothiophenes

    Energy Technology Data Exchange (ETDEWEB)

    Yoshimoto, N [Graduate School of Engineering, Iwate University, Ueda Morioka 020-8551 (Japan); Li, W Y [JST Innovation Satellite Iwate, Iiokashinden Morioka 020-0852 (Japan); Omote, K [Rigaku Corporation, 3-9-12 Matsubara-cho Akishima, Tokyo 196-8666 (Japan); Ackermann, J [Laboratoire des Materiaux Moleculaires et des Biomateriaux, GCOM2 UMR CNRS 6114 Faculte des Sciences de Luminy, Case 901, F-13288, Marseille cedex 09 (France); Videlot-Ackermann, C [Laboratoire des Materiaux Moleculaires et des Biomateriaux, GCOM2 UMR CNRS 6114 Faculte des Sciences de Luminy, Case 901, F-13288, Marseille cedex 09 (France); Brisset, H [Laboratoire des Materiaux Moleculaires et des Biomateriaux, GCOM2 UMR CNRS 6114 Faculte des Sciences de Luminy, Case 901, F-13288, Marseille cedex 09 (France); Fages, F [Laboratoire des Materiaux Moleculaires et des Biomateriaux, GCOM2 UMR CNRS 6114 Faculte des Sciences de Luminy, Case 901, F-13288, Marseille cedex 09 (France)

    2007-10-15

    Distyryl-oligothiophenes (DS-nT) is one of the promising semiconducting materials that use for organic thin-film transistors (OTFTs). The in-plane structures of vapor deposited ultrathin films of DS-4T, and its derivatives with different end-cap groups, on SiO{sub 2}substrate were characterized by grazing incidence x-ray diffractometry (GIXD). The morphology and film structure change with the nature of end-cap groups. The increase in volume of end-cap group causes the decrease in crystallinity and increase in frequency in nucleation. These characteristics could affect to the transport properties in OTFTs.

  2. Improve the Properties of p-i-n α-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available Gallium-doped zinc oxide (GZO thin films were deposited on glass, and the process parameters are RF power of 50 W and working pressure of 5 mTorr, and the substrate temperature was changed from room temperature to 300°C. At first, the thickness was around 300 nm by controlling the deposition time. The effects of substrate temperature on the crystallinity, lattice constant (c, carrier mobility, carrier concentration, resistivity, and optical transmission rate of the GZO thin films were studied. The 200°C-deposited GZO thin films had the best crystallinity, the larger carrier concentration and carrier mobility, and the lowest resistivity. For that, the thickness of the GZO thin films was extended to around 1000 nm. Hydrochloric (HCl acid solutions with different concentrations (0.1%, 0.2%, and 0.5% were used to etch the surfaces of the GZO thin films, which were then used as the substrate electrodes to fabricate the p-i-n α-Si:H thin-film solar cells. The haze ratio of the GZO thin films increased with increasing HCl concentration, and that would effectively enhance light trapping inside the absorber material of solar cells and then improve the efficiency of the fabricated thin-film solar cells.

  3. HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

    Science.gov (United States)

    Faudoa-Arzate, A.; Arteaga-Durán, A.; Saenz-Hernández, R.J.; Botello-Zubiate, M.E.; Realyvazquez-Guevara, P.R.; Matutes-Aquino, J.A.

    2017-01-01

    Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM. PMID:28772559

  4. Recent studies on photoconductive thin films of binary compounds

    Energy Technology Data Exchange (ETDEWEB)

    Bernede, J.C.; Pouzet, J.; Gourmelon, E.; Hadouda, H. [Equipe de Phys. des Solides pour l`Electronique, Nantes (France). Groupe Couches Minces]|[Laboratoire de Physique des Materiaux et Composants de l`Electronique, Universite d`Oran es Senia, BP 1624 (Algeria)

    1999-01-29

    In this paper a review of recent progress achieved in the domain of MX{sub 2} films (M=Mo, W; X=Se, S) is presented. The MoS{sub 2} is essentially discussed. It is shown that the emerging interest in the use of MX{sub 2} thin films as absorbing layer in photovoltaic cells has induced significant improvements of the crystalline and optoelectrical properties of these films. Some years ago the films obtained were crystallized in the 2H-MoS{sub 2} structure but the size of their crystallites was small and the samples were poorly photoconductive. Recently many works have shown that, whatever the deposition technique used, textured films with large grains and good photoconductive properties could be obtained when a thin nickel layer is used. During the post annealing treatment, this thin nickel layer diffuses all over the thickness of the films. It is proposed that systematically the crystallization process of MX{sub 2} films is a two-step process. The primary crystallization corresponds to small crystallites formation and the secondary crystallization corresponds to large ordered domains growth by coalescence of the small crystallized domains. This secondary crystallization process is facilitated by the presence of Van der Waals surfaces parallel to the plane of the substrate. Moreover, this effect is strongly improved in the presence of nickel which allows the obtention of high quality films. The electrical properties of these films are interpreted with the help of grain boundary theories. (orig.) 37 refs.

  5. Pulsed photonic fabrication of nanostructured metal oxide thin films

    Science.gov (United States)

    Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

    2017-09-01

    Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

  6. Ultra-thin Graphitic Film: Synthesis and Physical Properties

    Science.gov (United States)

    Kaplas, Tommi; Kuzhir, Polina

    2016-02-01

    A scalable technique of chemical vapor deposition (CVD) growth of ultra-thin graphitic film is proposed. Ultra-thin graphitic films grown by a one-step CVD process on catalytic copper substrate have higher crystallinity than pyrolytic carbon grown on a non-catalytic surface and appear to be more robust than a graphene monolayer. The obtained graphitic material, not thicker than 8 nm, survives during the transfer process from a Cu substrate without a template polymer layer, typically used in the graphene transfer process to protect graphene. This makes the transfer process much more simple and cost-effective. Having electrical and optical properties compatible with what was observed for a few layers of CVD graphene, the proposed ultra-thin graphitic film offers new avenues for implementing 2D materials in real-world devices.

  7. Potential of thin-film solar cell module technology

    Science.gov (United States)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  8. Zinc oxide thin film acoustic sensor

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  9. Substrate Temperature-Assisted Preparation of CZTSSe Thin Films by a Single Quinary Target

    Science.gov (United States)

    Zhao, Jun; Liang, Guang-Xing; Hu, Ju-Guang; Zheng, Zhuang-Hao; Luo, Jing-Ting; Zhang, Dong-Ping; Zeng, Yang; Fan, Ping

    2018-01-01

    Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been grown by RF-magnetron sputtering from a quinary CZTSSe target without subsequent selenization or sulfuration. We investigated the compositions, surface morphology, and crystal structural and optical properties of the CZTSSe thin films. At a substrate temperature of 450°C, the CZTSSe thin films displayed nearly ideal stoichiometric compositions that contributed to their grain growth and crystalline quality. The x-ray diffraction results confirmed that the CZTSSe thin films exhibited a (112) plane preferred orientation with good crystalline quality. The bandgap energy was approximately 1.45 eV. This study determined the optimum substrate temperature to improve the performance of CZTSSe thin films.

  10. MCP performance improvement using alumina thin film

    Science.gov (United States)

    Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

    2017-10-01

    The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

  11. Testing thin film adhesion strength acoustically

    Science.gov (United States)

    Madanshetty, Sameer I.; Wanklyn, Kevin M.; Ji, Hang

    2004-05-01

    A new method of measuring the adhesion strength of thin films to their substrates is reported. The method is based on an analogy with the common tensile test of materials. This is an acoustic method that uses acoustic microcavitation to bring about controlled erosion of the thin film. Based on the insonification pressure and the time to complete erosion, the adhesion strength is assessed. The measurements correctly rank order a set of thin film samples of known adhesion strengths.

  12. Growth and characterization of PNZST thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhai Jiwei; Li, X.; Yao, Y.; Chen, Haydn

    2003-05-25

    We have grown and compared microstructures and dielectric properties of PNZST thin films prepared on two different substrates by sol-gel methods. To ensure a complete single-phase perovskite PNZST thin film, a capping layer of PbO must be added to the top surface of the thin film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning and transmission electron microscopy. Dielectric and antiferroelectric properties were investigated as a function of temperature.

  13. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  14. Numerical modeling of thin film optical filters

    Science.gov (United States)

    Topasna, Daniela M.; Topasna, Gregory A.

    2009-06-01

    Thin films are an important and sometimes essential component in many optical and electrical devices. As part of their studies in optics, students receive a basic grounding in the propagation of light through thin films of various configurations. Knowing how to calculate the transmission and reflection of light of various wavelengths through thin film layers is essential training that students should have. We present exercises where students use Mathcad to numerically model the transmission and reflection of light from various thin film configurations. By varying the number of layers and their optical parameters, students learn how to adjust the transmission curves in order to tune particular filters to suit needed applications.

  15. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  16. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  17. Thin film solar energy collector

    Science.gov (United States)

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  18. Polycrystalline silicon thin-film solar cells on various substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenjing [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100080 (China); Xu, Ying [Beijing Solar Energy Research Institute, Beijing 100083 (China); Shen, Hui [Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510070 (China)

    2006-03-15

    Thin-film polycrystalline silicon solar cells have been fabricated on various substrates, such as inactive P{sup ++} mono-crystalline silicon substrates, p{sup ++} mono-Si substrates covered by thermally oxidized SiO{sub 2} and ceramic substrates by means of a rapid thermal chemical vapour deposition (RTCVD) technique. Zone melting recrystallization (ZMR) was applied in the process in order to enlarge the grain size of the deposited silicon thin film. The deposition conditions were studied. The scanning rate of the ZMR process was investigated. The best conversion efficiency of 15.12% (AM1.5G, 24.5 C) has been achieved on inactive P{sup ++} mono-crystalline silicon substrates without cell surface texture and 10.21% (AM1.5, 24.5 C) on p{sup ++} c-Si substrates covered by thermally oxidized SiO{sub 2} with the cell area of 1.07 cm{sup 2}. The polycrystalline silicon thin film was also deposited on Al{sub 2}O{sub 3} substrates by a RTCVD process. A simple ZMR process was used without any intermediate layer and cap layers. The maximum grain size of the silicon thin film was about one millimeter in width and a few millimeters in length after ZMR. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Structure and Morphology Control in Thin Films of Conjugated Polymers for an Improved Charge Transport

    OpenAIRE

    Haiyang Wang; Yaozhuo Xu; Xinhong Yu; Rubo Xing; Jiangang Liu; Yanchun Han

    2013-01-01

    The morphological and structural features of the conjugated polymer films play an important role in the charge transport and the final performance of organic optoelectronics devices [such as organic thin-film transistor (OTFT) and organic photovoltaic cell (OPV), etc.] in terms of crystallinity, packing of polymer chains and connection between crystal domains. This review will discuss how the conjugated polymer solidify into, for instance, thin-film structures, and how to control the molecula...

  20. Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature

    Science.gov (United States)

    Dong, Junchen; Li, Huijin; Han, Dedong; Yu, Wen; Luo, Zhen; Liang, Yi; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2018-01-01

    The c-axis-aligned crystalline (CAAC) rare earth gadolinium doped aluminum-zinc-oxide (Gd-AZO) thin films sputtered at room temperature are investigated in this work. It is found that the polycrystalline AZO is restructured into CAAC Gd-AZO through gadolinium doping. The X-ray diffraction spectrum and high-resolution transmission electron microscopy images indicate the (002) crystalline orientation of the local Gd-AZO grains. The film-formation mechanism of room-temperature sputtered CAAC Gd-AZO thin films is analyzed. Bottom gate oxide thin film transistors with a Gd-AZO active layer are fabricated by low temperature processes. The devices show preferable electrical properties, such as good I-V characteristics, high uniformity, and excellent bias stress stability.

  1. The radiation response of mesoporous nanocrystalline zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Manzini, Ayelén M.; Alurralde, Martin A. [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina); Giménez, Gustavo [Instituto Nacional de Tecnología Industrial - CMNB, Av. General Paz 5445, 1650 San Martín, Provincia de Buenos Aires (Argentina); Luca, Vittorio, E-mail: vluca@cnea.gov.ar [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina)

    2016-12-15

    The next generation of nuclear systems will require materials capable of withstanding hostile chemical, physical and radiation environments over long time-frames. Aside from its chemical and physical stability, crystalline zirconia is one of the most radiation tolerant materials known. Here we report the first ever study of the radiation response of nanocrystalline and mesoporous zirconia and Ce{sup 3+}-stabilized nanocrystalline zirconia (Ce{sub 0.1}Zr{sub 0.9}O{sub 2}) thin films supported on silicon wafers. Zirconia films prepared using the block copolymer Brij-58 as the template had a thickness of around 60–80 nm. In the absence of a stabilizing trivalent cation they consisted of monoclinic and tetragonal zirconia nanocrystals with diameters in the range 8–10 nm. Films stabilized with Ce{sup 3+} contained only the tetragonal phase. The thin films were irradiated with iodine ions of energies of 70 MeV and 132 keV at low fluences (10{sup 13} - 10{sup 14} cm{sup −2}) corresponding to doses of 0.002 and 1.73 dpa respectively, and at 180 keV and high fluences (2 × 10{sup 16} cm{sup −2}) corresponding to 82.4 dpa. The influence of heavy ion irradiation on the nanocrystalline structure was monitored through Rietveld analysis of grazing incidence X-ray diffraction (GIXRD) patterns recorded at angles close to the critical angle to ensure minimum contribution to the diffraction pattern from the substrate. Irradiation of the mesoporous nanocrystalline zirconia thin films with 70 MeV iodine ions, for which electronic energy loss is dominant, resulted in slight changes in phase composition and virtually no change in crystallographic parameters as determined by Rietveld analysis. Iodine ion bombardment in the nuclear energy loss regime (132–180 keV) at low fluences did not provoke significant changes in phase composition or crystallographic parameters. However, at 180 keV and high fluences the monoclinic phase was totally eliminated from the GIXRD

  2. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  3. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  4. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Science.gov (United States)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  5. Ferroelectric Properties of Large Area Evaporated Vinylidene Fluoride Thin Films

    Science.gov (United States)

    Foreman, Keith; Poddar, Shashi; Workman, Adam; Callori, Sara; Ducharme, Stephen; Adenwalla, Shireen

    Organic electronics provide advantages in price, processing, and functionality. Poly(vinylidene fluoride) (PVDF) is a popular organic ferroelectric used a in wide variety of applications. The VDF oligomer features a higher surface charge density than PVDF and its copolymers and oligomer thin films can be deposited in vacuum, allowing for deposition on a metallic thin film without breaking vacuum. Despite these advantages, there has been little work towards employing the VDF oligomer in devices. Here, we report on stable and tunable ferroelectric behavior of large area VDF oligomer thin films and the interface with Co thin films. Pyroelectric measurements are used to identify the operating temperature of VDF oligomer-based devices and probe the stability of the ferroelectric polarization states over long periods of time. Using capacitance-voltage, current-voltage, and x-ray diffraction measurements, the remanent polarization and crystalline phase are reported, and the effects of annealing are clarified. X-ray photoelectron spectroscopy is used to characterize the VDF/Co interface. Finally, piezoresponse force microscopy is used to demonstrate large area ferroelectric domain writing VDF oligomer thin films. This work sets the stage for VDF oligomer based organic electronics. Supported by NSF ECCS-1101256 and MRSEC DMR-1420645.

  6. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  7. Raman spectroscopy of thin films

    Science.gov (United States)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  8. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  9. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  10. Block copolymer directed nanoporous metal thin films.

    NARCIS (Netherlands)

    Arora, H.; Li, Z.H.; Sai, H.; Kamperman, M.M.G.; Warren, S.C.; Wiesner, U.

    2010-01-01

    Porous metal thin films have high potential for use in applications such as catalysis, electrical contacts, plasmonics, as well as energy storage and conversion. Structuring metal thin films on the nanoscale to generate high surface areas poses an interesting challenge as metals have high surface

  11. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  12. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  13. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  14. Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

    Science.gov (United States)

    Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

    2014-08-01

    This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

  15. Rotational reorganization of doped cholesteric liquid crystalline films

    NARCIS (Netherlands)

    Eelkema, R.; M. Pollard, M.; Katsonis, N.; Vicario, J.; J. Broer, D.; Feringa, B.L.

    2006-01-01

    In this paper an unprecedented rotational reorganization of cholesteric liquid crystalline films is described. This rotational reorganization results from the conversion of a chiral molecular motor dopant to an isomer with a different helical twisting power, leading to a change in the cholesteric

  16. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  17. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with ...

  18. Dynamics of faceted thin films formation during vapor deposition

    Science.gov (United States)

    Li, Kun-Dar; Huang, Po-Yu

    2018-01-01

    In this study, an anisotropic phase-field model was established to simulate the growth of crystalline thin films during vapor deposition. The formation and evolution of characteristic surface with faceted morphologies were demonstrated, in accordance with the regularly obtained microstructure in the actual experiments. In addition, the influences of deposition parameters, such as the deposition rate and the interfacial energy, on the formation mechanism of the characteristic morphology were also illustrated. While a relatively low surface energy of substrate was regarded, the faceted islands were formed, owing to the anisotropic interfacial energy of thin films. In the condition of a high surface energy of substrate, the layered structures of deposited films were produced, which was corresponding to the Frank–van der Merwe growth mode. As various deposition rates were utilized in the numerical simulations, diverse surface morphologies were developed on the basis of the dominant mechanisms, correlating with the adatom diffusion and the deposition kinetics. According to the calculation results, it was observed that a surface character with flattened morphology was generally driven by the adatom diffusion, while the factor of the deposition kinetics was inclined to roughen the surface of thin films. These numerical simulations enhanced the knowledge of thin film growth and facilitated the progress of the vapor deposition technology for advanced applications.

  19. Effect of RF power on structural and magnetic properties of La doped Bi2Fe4O9 thin films

    Science.gov (United States)

    Santhiya, M.; Pugazhvadivu, K. S.; Balakrishnan, L.; Tamilarasan, K.

    2016-05-01

    Effect of RF power on structural and magnetic properties of lanthanum (La3+) doped Bi2Fe4O9 thin films grown on p-Si substrates by radio frequency (RF) magnetron sputtering has studied in this investigation. It is observed that the sputtering power affects the crystalline nature and magnetic properties of grown thin films. X-ray diffraction and Raman spectrum confirms that the Bi2Fe4O9 (BFO) thin films were crystallized well with orthorhombic structure. The BFO thin films which was prepared at sputtering power of 100 W have good crystallinity than those prepared at 40 W. The magnetic properties are investigated by vibrating sample magnetometer. The magnetic hysteresis perceptive loop shows that the anti-ferromagnetic behavior of the sample at room temperature. These results confirms that the crystallinity and magnetic properties of the BFO thin films were enhanced at the higher sputtering power (100 W).

  20. Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

    Science.gov (United States)

    Doi, Takuma; Takeuchi, Wakana; Jin, Yong; Kokubun, Hiroshi; Yasuhara, Shigeo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

  1. The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

    Science.gov (United States)

    Chen, Bitao; Zhang, Yingke; Ouyang, Qiuping; Chen, Fei; Zhan, Xinghua; Gao, Wei

    2017-07-01

    SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3 passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

  2. Preparation and characterization of DC sputtered molybdenum thin films

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-03-01

    Full Text Available Molybdenum (Mo thin films have been deposited on soda-lime glass substrates using a DC magnetron sputtering system. Their electrical resistivity, and their morphological, structural and adhesive properties have been examined with respect to the deposition power, deposition time and substrate temperature. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the films showed a mono-crystalline nature with a preferred orientation along the (1 1 0 plane. The Mo films adhesion to the soda-lime glass could be improved by increasing the substrate temperature. At a deposition power of 200 W, deposition time of 20 min and substrate temperature of 450 °C, Mo thin film exhibiting mono-crystalline structure with thickness equal to 450 nm and electrical resistivity equal to 1.85 × 10−4 Ω cm was obtained.

  3. Wavefront correction in the extreme ultraviolet wavelength range using piezoelectric thin films

    NARCIS (Netherlands)

    Bayraktar, Muharrem; Chopra, A.; Rijnders, Augustinus J.H.M.; Boller, Klaus J.; Bijkerk, Frederik

    2014-01-01

    A new scheme for wavefront correction in the extreme ultraviolet wavelength range is presented. The central feature of the scheme is the successful growth of crystalline piezoelectric thin films with the desired orientation on an amorphous glass substrate. The piezoelectric films show a high

  4. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  5. Smectic ordering in nematic and smectic liquid-crystalline films probed by means of surface light scattering

    NARCIS (Netherlands)

    Böttger, A.; Frenkel, D.; Joosten, J.G.H.; Krooshof, G.

    1988-01-01

    We present the first results of experiments that measure the intensity of light scattered by capillary waves on the surface of free-standing liquid-crystalline thin films. The intensity of the scattered light provides information about the surface tension of the liquid-air interfaces and, more

  6. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2013-11-14

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

  7. Elevated transition temperature in Ge doped VO2 thin films

    Science.gov (United States)

    Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

    2017-07-01

    Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

  8. Structural transformation of CsI thin film photocathodes under exposure to air and UV irradiation

    CERN Document Server

    Tremsin, A S; Siegmund, O H W

    2000-01-01

    Transmission electron microscopy has been employed to study the structure of polycrystalline CsI thin films and its transformation under exposure to humid air and UV irradiation. The catastrophic degradation of CsI thin film photocathode performance is shown to be associated with the film dissolving followed by its re-crystallization. This results in the formation of large lumps of CsI crystal on the substrate surface, so that the film becomes discontinuous and its performance as a photocathode is permanently degraded. No change in the surface morphology and the film crystalline structure was observed after the samples were UV irradiated.

  9. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  10. Macro stress mapping on thin film buckling

    Energy Technology Data Exchange (ETDEWEB)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  11. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c...... or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate...

  12. Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Evans, R [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, S [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, M A [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Paseo Colon y Tollocan, Toluca Edo. de Mexico, 50110 (Mexico); Sanchez-Perez, C [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico); Esparza-GarcIa, A [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico)

    2007-04-15

    In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO{sub 3} phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm.

  13. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  14. Effect of Confinement in PFSA Ionomer Thin Films

    Science.gov (United States)

    Dudenas, Peter; Tesfaye, Meron; Weber, Adam; Kusoglu, Ahmet

    Ion-conducting polymer (ionomer) behavior in catalyst layers of electrochemical devices is fairly unknown and presents challenges for their characterization in this heterogeneous environment. In order to enable next-generation electrochemical devices, structure-property relationships of these ionomers must be elucidated under confinement. In an effort to do so, model systems of ionomer thin films of varying thicknesses (10 to 200 nm) are utilized to understand effect of confinement on crystallinity, swelling and mechanical properties. Grazing incidence wide-angle x-ray scattering (GIWAXS) is used to determine the relative degree of crystallinity (rDoC) as a function of thickness, which is then correlated to mechanical properties and swelling of thin films, as measured by a cantilever bending method and ellipsometry, respectively. Moreover, factors controlling the thin-film behavior, such as thermal transitions and substrate effects, are explored further through temperature-dependent ellipsometry and GIWAXS. Multiple perfluorinated sulfonic acid (PFSA) ionomer chemistries are used to demonstrate the effect of side-chain length and density on the interplay between the confinement effects and structure-property relationships.

  15. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ruiz, Patricia [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ferrer, Isabel J. [Departamento de Física de Materiales M-4, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Figuera, Juan de la; Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-07-05

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K{sup 2} cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm.

  16. Liquidlike nature of crystalline n-butane and n-pentane films studied by time-of-flight secondary ion mass spectrometry.

    Science.gov (United States)

    Souda, Ryutaro

    2009-12-03

    Crystallization of vapor-deposited thin films of n-butane and n-pentane has been investigated using temperature-programmed time-of-flight secondary ion mass spectrometry. The morphology of thin n-butane (n-pentane) films changes at around the calorimetric crystallization temperature of 65 K (85 K) as a result of crystallization of the supercooled liquid. The morphology of the crystal grains of n-butane changes at 85 K; the butane molecules permeate through porous amorphous-solid-water films above this temperature. The crystal grains of n-pentane are smaller in size than those of n-butane, forming a smoother crystalline film. However, the crystalline n-pentane film dewets abruptly at higher temperatures, depending on the film thickness. The liquidlike nature of crystalline n-pentane (n-butane) is attributable to premelting (coexisting second liquid).

  17. Pulsed laser deposition of SmCo thin films for MEMS applications

    Directory of Open Access Journals (Sweden)

    Mirza Khurram Baig

    2016-10-01

    Full Text Available Thin films and coatings of permanent magnetic materials have found extensive applications in a wide range of technological domains. SmCo thin films show tremendous potential for use as permanent magnetic films on account of their high anisotropy fields, moderately high saturation magnetization and high curie temperature. In the present research, SmCo thin films have been deposited on single crystal Si(1 0 0 substrates using pulsed laser deposition technique. The films were deposited at a fixed substrate temperature of 400 °C by varying the number of pulses, in order to get thin films of different thicknesses. Effect of laser pulses on the crystal structure evolution, composition of the deposited material, film thicknesses and hence the magnetic properties have been investigated. X-ray diffraction analysis was performed in order to determine the crystal structure of the deposited films. The compositional analysis was performed by using energy dispersive X-ray spectroscopy. A slight variation in the Sm and Co contents was observed in the thin films grown by varying the laser shots. The microstructural information of the thin films was obtained by using a scanning electron microscope. The magnetic and electrical parameters were investigated by using vibrating sample magnetometer and two point probe respectively. The results show hard magnetic and conducting nature of all deposited thin films except sample 1 due to poor crystallinity.

  18. Nanostructured light-absorbing crystalline CuIn{sub (1–x)}Ga{sub x}Se{sub 2} thin films grown through high flux, low energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hall, Allen J.; Hebert, Damon; Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Shah, Amish B. [Center for Microanalysis of Materials, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Ave, Urbana, Illinois 61801 (United States); Bettge, Martin [Chemical Sciences and Engineering, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60438 (United States)

    2013-10-21

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620–740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600–670 °C) and high rf power (80–400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by (112){sub T} facets. At 80–400 W rf power and 640–740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong (112){sub T} texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0–50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of (112){sub T} planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  19. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  20. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Emrah Unalan, Husnu

    2017-10-01

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  1. Mechanical Properties of Silicon Carbonitride Thin Films

    Science.gov (United States)

    Peng, Xiaofeng; Hu, Xingfang; Wang, Wei; Song, Lixin

    2003-02-01

    Silicon carbonitride thin films were synthesized by reactive rf sputtering a silicon carbide target in nitrogen and argon atmosphere, or sputtering a silicon nitride target in methane and argon atmosphere, respectively. The Nanoindentation technique (Nanoindenter XP system with a continuous stiffness measurement technique) was employed to measure the hardness and elastic modulus of thin films. The effects of sputtering power on the mechanical properties are different for the two SiCN thin films. With increasing sputtering power, the hardness and the elastic modulus decrease for the former but increase for the latter. The tendency is similar to the evolution trend of Si-C bonds in SiCN materials. This reflects that Si-C bonds provide greater hardness for SiCN thin films than Si-N and C-N bonds.

  2. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  3. Integrated Substrate and Thin Film Design Methods

    National Research Council Canada - National Science Library

    Thaler, Stephen

    1999-01-01

    .... However, since modem thin film technology allows a wide range of exotic compositions and stoichiometries via deposition, surface treatments, and nano-fabrication, it is anticipated that this newly...

  4. Thermally tunable ferroelectric thin film photonic crystals.

    Energy Technology Data Exchange (ETDEWEB)

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  5. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  6. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  7. Aging phenomena in polystyrene thin films

    OpenAIRE

    Fukao, Koji; Koizumi, Hiroki

    2008-01-01

    The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on the...

  8. Multilayer Thin Film Sensors for Damage Diagnostics

    Science.gov (United States)

    Protasov, A. G.; Gordienko, Y. G.; Zasimchuk, E. E.

    2006-03-01

    The new innovative approach to damage diagnostics within the production and maintenance/servicing procedures in industry is proposed. It is based on the real-time multiscale monitoring of the smart-designed multilayer thin film sensors of fatigue damage with the standard electrical input/output interfaces which can be connected to the embedded and on-board computers. The multilayer thin film sensors supply information about the actual unpredictable deformation damage, actual fatigue life, strain localization places, damage spreading, etc.

  9. Structural and optical study of nanostructure of 4-cyanopyranoquinolinedione (CPQ) thin films

    Science.gov (United States)

    Soliman, H. S.; Ibrahim, M.; El-Mansy, M. A. M.; Atef, S. M.

    2017-10-01

    Thin films of 4-cyanopyranoquinolinedione, CPQ, with different thicknesses were deposited by thermal evaporation method. The structural properties of powder and thin films were investigated using X-ray diffraction technique. The crystal structure, lattice parameters and Miller indices of the powder were indexed. The crystalline size, strain and dislocation density were determined for powder and thin films. The optical properties of CPQ thin films were studied using spectrophotometric measurements of both transmittance and reflectance in the wavelength range 200-2500 nm. HOMO-LUMO band gap was determined by cyclic voltammetry. The calculation of optical band gap using absorption coefficient showed that the film has direct allowed transition with 3.02 eV energy gap. The normal dispersion of the refractive index of the films was described by Wemple-DiDomenico single oscillator model. Some dispersion parameters were calculated. Also, the real and imaginary parts of dielectric constant, volume and surface energy loss functions were estimated.

  10. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  11. Thin organosilicon films for integrated optics.

    Science.gov (United States)

    Tien, P K; Smolinsky, G; Martin, R J

    1972-03-01

    The continued development of integrated optics is heavily dependent upon the availability of materials that are suitable for the construction of thin-film optical circuitry and devices. We report here an investigation of new films made by an rf discharge polymerization process of organic chemical monomers. We concentrate our discussion on films prepared from vinyltrimethylsilane and hexamethyldisilbxane. These films are smooth, tough, pinhole-free, transparent from 0.4 microm to 0.75 microm, and exhibit very low loss (prism-film coupler for studying the refractive index of each material is discussed in detail.

  12. THIN FILM A-Slzfl SOLAR CELLS

    African Journals Online (AJOL)

    circuit current were compared to the parameters of crystalline silicon pit-junction solar cells. The effect of irradiance and spectral illumination on the cell performance was investigated. Finally, the applicability of the investigated thin. film a-Si:H solar cells for its practical operation in Ethiopia is discussed. Key words/phrases: ...

  13. Ce{sup 3+}-doped crystalline garnet films - scintillation characterization using {alpha}-particle excitation

    Energy Technology Data Exchange (ETDEWEB)

    Mares, Jiri A., E-mail: amares@fzu.c [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Prusa, Petr [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University, Brehova 7, 115 19 Prague 1 (Czech Republic); Nikl, Martin; Nitsch, Karel; Beitlerova, Alena [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Kucera, Miroslav; Hanus, Martin [Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic); Zorenko, Yurij [Laboratory of Optoelectronic Materials, Department of Electronics, Ivan Franko National University of Lviv, 107 Gen. Tarnavskogo Str. (Ukraine)

    2010-03-15

    Scintillating properties of Ce{sup 3+}-doped (Lu,Y) aluminum garnet single crystalline films (SCF) were investigated. Thin SCF films of thickness between 1 and 30 {mu}m were grown by a liquid phase epitaxy (LPE) method in various fluxes. The {alpha}-particle excitation (mainly 5.4857 MeV line of {sup 241}Am) of pulse height spectra is used to measure scintillation response of SCF, especially peak of those {alpha}-rays which are totally absorbed in the films. Detailed studies and evaluation of scintillation measurements of large sets of Ce{sup 3+}-doped SCF (Lu,Y) aluminum garnets showed that at present time (i) YAG:Ce SCF have comparable scintillation properties as YAG:Ce single crystals, especially their N{sub phels} photoelectron yields are the same while (ii) scintillation properties of LuAG:Ce SCF do not reach those of LuAG:Ce single crystal.

  14. Growth of α-sexithiophene nanostructures on C60 thin film layers

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

    2014-01-01

    Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like...... structures at temperatures around 390K. X-ray diffractrometry reveals (100) crystalline orientation in the films grown at higher surface temperatures, which corresponds to upright oriented molecules. Rocking curves reveal the lowest mosaicity for samples grown at the highest substrate temperatures. From...

  15. Effect of substrate temperature on structural, morphological, optical and electrical properties of IGZO thin films

    Science.gov (United States)

    Jayaraman, Vinoth Kumar; Álvarez, Arturo Maldonado; Olvera Amador, María de la luz

    2017-02-01

    Indium and gallium co-doped zinc oxide (IGZO) thin films were deposited on glass substrates by ultrasonic spray pyrolysis. Physical properties such as structural, morphological, optical and electrical properties were examined on IGZO thin films with respect to the changes in the substrate temperature (425, 450 and 475 °C). Structural results showed that IGZO films were crystalline and presented hexagonal wurtzite structure. Morphological studies proved that the substrate temperature changed the sizes of hexagonal nanostructures of IGZO. Optical transmittance in the UV-vis region and electrical measurements confirmed that IGZO films were transparent (>70%) with a minimum electrical resistivity 10.5×10-3 Ω cm.

  16. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  17. Band structure of thin films by the linear augmented-plane-wave method

    DEFF Research Database (Denmark)

    Jepsen, O.; Madsen, J.; Andersen, Ole Krogh

    1978-01-01

    We present a linear augmented-plane-wave method for solving the band-structure problem in thin crystalline films. The potential is separated into a muffin-tin potential inside the film, a potential depending exclusively on the normal coordinate outside the film, and corrections in both regions....... The method is tested on (100) and (111) monolayers of Cu using a standard muffin-tin potential....

  18. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  19. Preparation and characterization of CdO thin films obtained by thermal oxidation of evaporated Cd thin films

    Science.gov (United States)

    Danţuş, C.; Rusu, G. G.; Dobromir, M.; Rusu, M.

    2008-12-01

    CdO thin films ( d = 300-400 nm) were prepared by thermal oxidation of metallic Cd thin films, vacuum evaporated onto unheated glass substrates. The as-deposited Cd films were subsequently heat treated in open atmosphere in two manners: by slowly heating, with rate of 5 K/min up to the temperature of 650 K and maintained at this temperature for 5 min, and by flash heating for 5 min at the same temperature of 650 K. The effect of oxidation procedure on the crystalline structure and electrical (temperature dependence of electrical conductivity) and optical (transmission and reflection spectra) properties of as obtained CdO films was investigated. All obtained CdO films are polycrystalline with strong preferential orientation with (1 1 1) plane parallel to the substrate. Depending on the oxidation conditions, the electrical conductivity at room temperature varied in the range 5 × 10 to 5 × 10 4 Ω -1 m -1. Also, the optical band gap was found to be of 2.20-2.22 eV for direct transitions and of 1.83-1.92 eV for the indirect ones. In this paper, the obtained results are correlated with the oxidation process that takes place during film annealing.

  20. Thin film absorber for a solar collector

    Science.gov (United States)

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  1. Formation of ZnO thin films by photocatalytic reaction

    OpenAIRE

    Nishikiori, Hiromasa; Nagaya, Satoshi; Takikawa, Takumi; Kikuchi, Ayaka; Yamakami, Tomohiko; Wagata, Hajime; Teshima, Katsuya; Fujii, Tsuneo

    2014-01-01

    Zinc oxide and layered zinc hydroxides were deposited from an aqueous solution of zinc nitrate at 323–358 K on a substrate plate with a very thin titanium dioxide film by a photocatalytic reaction. The amorphous or low crystalline zinc hydroxide aggregates were deposited at a low temperature. The zinc oxide crystals with about 1–2 μm-sized hexagonal columns and 10 nm-sized spheres were formed at 338–358 K. Nitrate ions in the solution were reduced to nitrite ions, and water was transformed in...

  2. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  4. Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

  5. Pulsed laser deposition of thin refractory metal nitride films

    Science.gov (United States)

    Fernandez, Manuel; Bereznai, M.; Caricato, A. P.; D'Anna, Emilia; Juhasz, A.; Leggieri, Gilberto; Luches, Armando; Majni, Guiseppe; Martino, Maurizio; Mengucci, Paolo; Nagy, P. M.; Nanai, Laszlo; Toth, Zsolt

    2003-11-01

    We report on the deposition of thin transition metal nitride (TMN) films by ablating Mo, Ta, V and W targets in low-pressure (1, 10 and 100 Pa) nitrogen atmosphere by KrF excimer laser pulses, and on their characterization. The targets were foils of high purity (99.8%). 3" Si(111) wafers wre used as substrates. Film characteristics (composition, crystalline structure, hardness) were studied as a function of N2 pressure, KrF laser fluence (4.5-19 J/cm2), substrate temperature (20-750°C) and target to substrate distance (30-70 mm). Rutherford backscattering spectrometery (RBS) was used to calculate thickness of the films and identification of the composition. TMN films ar formed already at low N2 ambient pressures (1 Pa) and laser fluences (6 J/cm2) on substrates at room temperature. XRD investigations show that films deposited at elevated temperatures are mostly polycrystalline. While Mo, W and Ta nitrides show respectively a γ-Mo2N, β-W2N and δ-TaN phase in almost any deposition condition, vanadium nitride shows a prevalent phase of δ-VN at N2 pressures of 1-10 Pa, while at higher pressures (100 Pa) and at relatively high laser fluences (16-19 J/cm2) the dominant phase is β-V2N. Generally the crystallinity of the films improves by increasing the substrate temperature. Well-crystallinzed films are obtained on substrates heated at 500°C. Surface morphology, microhardness and electrical resistivity of the films are discussed as a function of both the nitrogen pressure and substrate temperature.

  6. Gradient Solvent Vapor Annealing of Thin Films

    Science.gov (United States)

    Albert, Julie; Bogart, Timothy; Lewis, Ronald; Epps, Thomas

    2011-03-01

    The development of block copolymer materials for emerging nanotechnologies requires an understanding of how surface energy/chemistry and annealing conditions affect thin film self-assembly. Specifically, in solvent vapor annealing (SVA), the use of solvent mixtures and the manipulation of solvent vapor concentration are promising approaches for obtaining a desired morphology or nanostructure orientation. We designed and fabricated solvent-resistant devices to produce discrete SVA gradients in composition and/or concentration to efficiently explore SVA parameter space. We annealed copolymer films containing poly(styrene), poly(isoprene), and/or poly(methyl methacrylate) blocks, monitored film thicknesses during annealing, and characterized film morphologies with atomic force microscopy. Morphological changes across the gradients such as the transformation from parallel cylinders to spheres with increasing solvent selectivity provided insight into thin film self-assembly, and the gradient device has enabled us to determine transition compositions and/or concentrations.

  7. Modifications in SnS thin films by plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-02-01

    The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.

  8. Formation of rubrene nanocrystals by laser ablation in liquids utilizing MAPLE deposited thin films

    Science.gov (United States)

    O'Malley, Sean M.; Amin, Mitesh; Borchert, James; Jimenez, Richard; Steiner, Matt; Fitz-Gerald, James M.; Bubb, Daniel M.

    2014-03-01

    Nanoparticles (NPs) of the organic semiconductor rubrene were formed utilizing the laser ablation in liquids (LAL) method. Thin-films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) served as the ablation targets. We note in the case of amorphous films targets, the absorbed energy is below the threshold value needed for ablation; though polycrystalline films irradiated under the same LAL conditions result in ejecta. It is suggested this stems from an increase in the effective absorption through light trapping within crystalline domains. An observed red-shift in the absorption edge is attributed to the polar aqueous environment and to the crystalline phase.

  9. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  10. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  11. Thin film dielectric composite materials

    Science.gov (United States)

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  12. Anomalous scaling in surface roughness evaluation of electrodeposited nanocrystalline Pt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nabiyouni, G., E-mail: g-nabiyouni@araku.ac.ir [Department of Physics, University of Arak, Beheshti Avenue, Arak 38156 (Iran, Islamic Republic of); Farahani, B. Jalali [Electrical Engineering Department, Arizona State University, Goldwater Building 340, Tempe, AZ (United States)

    2009-11-15

    Atomic force microscopy (AFM) is used to measure the surface roughness of crystalline Pt thin films as a function of film thickness and growth rate. Our films were electrodeposited on Au/Cr/glass substrates, under galvanostatic control (constant current density), from a single electrolyte containing Pt{sup 4+} ions. Crystalline structure of the films was confirmed by X-ray diffraction (XRD) technique. The effect of growth rate (deposition current density) and film thickness (deposition time) on the kinetic roughening of the films were studied using AFM and roughness calculation. The data is consistent with a rather complex behaviour known as 'anomalous scaling' where both local and large scale roughnesses show power law dependence on the film thickness.

  13. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  14. Multifunctional Parylene-C Microfibrous Thin Films

    Science.gov (United States)

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  15. Thin film silicon modules: contributions to low cost industrial production

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  16. Excimer laser reactive deposition of vanadium nitride thin films

    Science.gov (United States)

    D'Anna, E.; Di Cristoforo, A.; Fernández, M.; Leggieri, G.; Luches, A.; Majni, G.; Mengucci, P.; Nanai, L.

    2002-01-01

    We report on the deposition of thin vanadium nitride films by ablating vanadium targets in low-pressure N 2 atmosphere, and on their characterization. The targets were vanadium foils (purity 99.8%). 3 in. Si(1 1 1) wafers were used as substrates. Film characteristics (composition and crystalline structure) were studied as a function of N 2 pressure (0.5-200 Pa), KrF laser fluence (4.5-19 J/cm 2), substrate temperature (20-750 °C) and target-to-substrate distance (30-70 mm). Vanadium nitride is already formed at low N 2 ambient pressures (1 Pa) and laser fluences (6 J/cm 2) on substrates at room temperature. At the N 2 pressures of 1-10 Pa, the prevalent phase is VN. At higher pressures (100 Pa) and at relatively high laser fluences (16-19 J/cm 2), the dominant phase is V 2N. The crystallinity of the films improves by increasing the substrate temperature. Well-crystallized films are obtained on substrates heated at 500 °C.

  17. Ion irradiation of AZO thin films for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

    2017-02-01

    Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  18. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  19. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  20. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  1. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  2. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  3. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  4. Metal–organic framework thin films with well-controlled growth directions confirmed by x-ray study

    Directory of Open Access Journals (Sweden)

    Kazuya Otsubo

    2014-12-01

    Full Text Available Metal–organic frameworks (MOFs have attracted the attention of a variety of researchers because of their structural diversity and designability, and their varied physical properties based on their uniform microporosity. While MOFs are interesting as bulk materials, future applications in functional nanomaterials will require the use of MOFs as thin films, and to achieve this, several thin-film fabrication techniques have been developed. These techniques have provided rational design of a variety of MOF thin films; however, oriented crystal growth of a MOF thin film, which is mainly confirmed by X-ray diffraction, remains a challenge that should be addressed. In this article, we review thin-film fabrications and characterizations, and structural features of MOF thin films with perfect crystalline orientation.

  5. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  6. X-ray diffraction from thin films : Size/strain analysis and whole pattern fitting

    Energy Technology Data Exchange (ETDEWEB)

    Scardi, P. [Trento Univ. (Italy). Dept. of Materials Engineering

    1996-09-01

    Line Profile Analysis (LPA) and whole pattern fitting may be used with success for the characterization of thin films from XRD data collected with the traditional Bragg-Brentano geometry. The size/strain analysis was conducted by an integrated procedure of profile modelling-assisted Fourier analysis, in order to measure the content of lattice imperfections and crystalline domain size along the growth direction in heteroepitaxial thin films. The microstructure of these films is typical of several PVD processes for the production of highly textured and low-defect thin crystalline layers. The same analysis could be conducted on random thin films as well, and in this case it is possible to determine an average crystallite size and shape. As will be shown in the paper, structural and microstructural parameters obtained by these methods may be correlated with thin film properties of technological interest. The whole pattern analysis may be used to obtain the information contained in a wide region of the diffraction pattern. This approach, currently used for the quantitative analysis of phase mixtures in traditional powder samples, was modified to account both for the size/strain effects, according to a simplified LPA, and for the structure of thin films and multi-layer systems. In this way, a detailed analysis based on a structural model for the present phases can be performed considering the real geometry of these samples. In particular, the quantitative phase analysis could be conducted in terms of layer thickness instead of volume or weight fractions.

  7. SnS Thin Film Solar Cells: Perspectives and Limitations

    Directory of Open Access Journals (Sweden)

    Simone Di Mare

    2017-02-01

    Full Text Available Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements are still limiting their market diffusion. For this reason new thin film materials, such as Cu2ZnSnS4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu2ZnSnS4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs. The sulfur loss represents one of the major challenges of SnS solar cell technology.

  8. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  9. Pulsed laser deposition of anatase thin films on textile substrates

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-30

    Highlights: • Anatase thin films were grown on carbon fibre fabrics by pulsed laser deposition. • A novel Q-switched CO{sub 2} laser was utilised as radiation source. • Coated fibres exhibit photocatalytic activity and are resistant against bending. - Abstract: Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  10. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  11. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  12. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  13. Profilometry of thin films on rough substrates by Raman spectroscopy

    KAUST Repository

    Ledinský, Martin

    2016-12-06

    Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

  14. In Situ Studies of the Temperature-Dependent Surface Structure and Chemistry of Single-Crystalline (001)-Oriented La 0.8 Sr 0.2 CoO 3−δ Perovskite Thin Films

    KAUST Repository

    Feng, Zhenxing

    2013-05-02

    Perovskites are used to promote the kinetics of oxygen electrocatalysis in solid oxide fuel cells and oxygen permeation membranes. Little is known about the surface structure and chemistry of perovskites at high temperatures and partial oxygen pressures. Combining in situ X-ray reflectivity (XRR) and in situ ambient pressure X-ray photoelectron spectroscopy (APXPS), we report, for the first time, the evolution of the surface structure and chemistry of (001)-oriented perovskite La0.8Sr0.2CoO 3-δ (LSC113) and (La0.5Sr 0.5)2CoO4+δ (LSC214)-decorated LSC113 (LSC113/214) thin films as a function of temperature. Heating the (001)-oriented LSC113 surface leads to the formation of surface LSC214-like particles, which is further confirmed by ex situ Auger electron spectroscopy (AES). In contrast, the LSC113/214 surface, with activities much higher than that of LSC 113, is stable upon heating. Combined in situ XRR and APXPS measurements support that Sr enrichment may occur at the LSC113 and LSC214 interface, which can be responsible for its markedly enhanced activities. © 2013 American Chemical Society.

  15. Magnetic Surfaces, Thin Films, and Multilayers

    Science.gov (United States)

    1992-01-01

    Laboratory, Berkeley CA 94720. ABSTRACT A brief review of the state of the art in the field of surface, inter- face and thin-film magnetism is presented... art and maturing science [I]. In particular, growing epitaxial films of monolayer or near-monolayer thickness allows the investigation of two...understood considering steps. A such study is under progress. Aknowledgments This work was partially supported by " Acciones Integradas Hispano-Francesas

  16. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  17. Microstructure and gas-sensing properties of sol-gel ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Musat, V. [Department of Metals and Materials Science, ' Dunarea de Jos' University of Galati, 800008 Galati (Romania)], E-mail: viorica.musat@ugal.ro; Rego, A.M. [Department of Chemical and Biological Engineering, CQFM, Technical University of Lisbon, 1049-001 Lisbon (Portugal); Monteiro, R.; Fortunato, E. [Department of Materials Science, CENIMAT, Faculty of Sciences and Technology, New University of Lisbon, Campus da Caparica, 2829-516 Caparica (Portugal)

    2008-02-15

    The paper presents the properties of zinc oxide thin films deposited on glass substrate via dip-coating technique. Zinc acetate dehydrate, ethanol and monoethanol amine were used as starting materials and N{sub 2} gas was used as thermal annealing atmosphere for film crystallization. The effect of withdrawal speed on the crystalline structure, morphology, zinc and nitrogen chemical states, optical, electrical and gas-sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and photoreduction-ozone reoxidation data.

  18. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    Science.gov (United States)

    Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

    2014-07-01

    Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  19. In-situ transmission measurements as process control for thin-film silicon solar cells

    NARCIS (Netherlands)

    Meier, M.; Muthmann, S.; Flikweert, A. J.; Dingemans, G.; M. C. M. van de Sanden,; Gordijn, A.

    2011-01-01

    In this work, in-situ transmission measurements using plasma as light source are presented for the determination of growth rate and crystallinity during silicon thin-film growth. The intensity of distinct plasma emission lines was measured at the backside of the transparent substrates on which

  20. Size effects in single crystal thin films : nonlocal crystal plasticity simulations

    NARCIS (Netherlands)

    Yefimov, S.; van der Giessen, E.

    2005-01-01

    Stress relaxation in single crystalline thin films on substrates subjected to thermal loading is studied using a recently proposed nonlocal continuum crystal plasticity theory. The theory is founded on a statistical-mechanics description of the collective behaviour of dislocations in multiple slip,

  1. Growth and properties of lead iodide thin films by spin coating

    Indian Academy of Sciences (India)

    solar cell [5], one of the highest solution-processed solar cells reported so far. Lead iodide exists in hexagonal crystalline structure having an intrinsic bandgap of .... According to spin coating theory [12], during spinning due to the centrifugal force most of the PbI2 solution is ejected from the substrate leaving a thin liquid film ...

  2. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  3. Magnetocaloric effect of thin Terbium films

    Science.gov (United States)

    Mello, V. D.; Anselmo, D. H. A. L.; Vasconcelos, M. S.; Almeida, N. S.

    2017-12-01

    We report a theoretical study of the magnetocaloric effect of Terbium (Tb) thin films due to finite size and surface effects in the helimagnetic phase, corresponding to a temperature range from TC=219 K to TN=231 K, for external fields of the order of kOe. For a Tb thin film of 6 monolayers submitted to an applied field (ΔH =30 kOe, ΔH =50 kOe and ΔH = 70 kOe) we report a significative change in adiabatic temperature, ΔT / ΔH , near the Néel temperature, of the order ten times higher than that observed for Tb bulk. On the other hand, for small values of the magnetic field, large thickness effects are found. For external field strength around few kOe, we have found that the thermal caloric efficiency increases remarkably for ultrathin films. For an ultrathin film with 6 monolayers, we have found ΔT / ΔH = 43 K/T while for thicker films, with 20 monolayers, ΔT / ΔH = 22 K/T. Our results suggest that thin films of Tb are a promising material for magnetocaloric effect devices for applications at intermediate temperatures.

  4. Structural, optical and electrical properties of V2O5 xerogel thin films

    Science.gov (United States)

    Bera, B.; Esther, A. C. M.; Dey, A.; Mukhopadhyay, A. K.

    2016-06-01

    In the present work V2O5 xerogel thin films are deposited on quartz substrate by using a cost effective sol-gel based dip coating method. Films of thickness 122, 224 and 284 nm are grown as the number of dipping varies from one to three. Phase analyses of the thin films are investigated by X-ray diffraction technique. The microstructural characterization is carried out by electron microscopy techniques. Crystalline, phase pure V2O5 thin films with uniform nanoporous microstructure are grown in the present work. Solar transmittance and reflectance of films are measured by UV-VIS-NIR spectrophotometer. The optical band gap, refractive index and extinction coefficient of the films are also evaluated. Further, the average solar absorptance and IR emittance are evaluated by solar spectrum reflectometer and emissometer, respectively. The solar transmittance and optical band gap decrease with the increase in film thickness from 122 to 284 nm while reverse trend is observed for solar absorptance. Refractive index ( 1.95) and IR emittance ( 0.75) of the nanoporous V2O5 xerogel thin films on quartz substrate are almost independent of film thickness. The sheet resistance value slightly decreases from 1.6 × 106 to 2.6 × 105 ohm/cm2 as the thickness of the V2O5 xerogel thin film increases from 112 to 284 nm.

  5. Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

    CERN Document Server

    Dmitriev, P A; Milichko, V A; Mukhin, I S; Gudovskikh, A S; Sitnikova, A A; Samusev, A K; Krasnok, A E; Belov, P A

    2015-01-01

    The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanopart...

  6. Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

    2014-05-02

    Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

  7. Electrical conduction noise and its correlation with structural properties of Cu2ZnSnS4 thin films

    Science.gov (United States)

    Zubair Ansari, Mohd; Munjal, Sandeep; Kumar, Vikram; Khare, Neeraj

    2016-07-01

    Cu2ZnSnS4 (CZTS) thin films have been deposited by ultrasonic assisted chemical vapor deposition in a single step process at different substrate temperatures and structural, morphological, electrical and conduction noise characteristics of the CZTS thin films have been studied. Single phase CZTS thin films are formed at 275 °C and 325 °C deposition temperatures, whereas the CZTS thin film deposited at 375 °C showed secondary phase also. The crystallinity of the films improves and resistivity decreases with the increases of the deposition temperature. The temperature dependent electrical conductivity of the films reveals that in the temperature range 300-250 K, thermally activated conduction is observed. The conduction noise in the CZTS thin films, exhibits 1/f noise in the low frequency region and found to be strongly dependent on the film deposition temperatures. The film deposited at 275 °C and 375 °C shows larger conduction noise, whereas the film deposited at 325 °C shows smaller noise. For the low frequency 1/f noise, the value of α is also found to be the minimum for the film deposited at 325 °C. The higher value of conduction noise in the film deposited at 275 °C is related to poor crystallinity and less compact morphology. For the film deposited at 375 °C, crystallinity and compactness improves, but the presence of the secondary phases seems to be responsible for generating higher noise. The smallest conduction noise of the film deposited at 325 °C is due to single phase film with better crystallinity and smaller trap density ˜5.1 × 1015 cm-2 eV-1.

  8. Preparation and Characterization of Sb2Te3 Thin Films by Coevaporation

    Directory of Open Access Journals (Sweden)

    Bin Lv

    2010-01-01

    Full Text Available Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper. Sb2Te3 thin films were characterized by x-ray diffraction (XRD, x-ray fluorescence (XRF, atomic force microscopy (AFM, x-ray photoelectron spectroscopy (XPS, electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred from in situ electrical conductivity measurements. The results indicate that as-grown Sb2Te3 thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

  9. Enhanced ferromagnetic response in ZnO:Mn thin films by tailoring composition and defect concentration

    Energy Technology Data Exchange (ETDEWEB)

    Ilyas, Usman [NSSE, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Department of Physics, University of Engineering and Technology, Lahore 54890 (Pakistan); Tan, T.L.; Lee, P. [NSSE, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Ramanujan, R.V. [School of Material Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Li, Fengji; Zhang, Sam [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Chen, R.; Sun, H.D. [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Rawat, R.S., E-mail: rajdeep.rawat@nie.edu.sg [NSSE, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)

    2013-10-15

    The presence of structural defects degrade the crystalline quality of ZnO:Mn thin films and affects the magneto-optical properties of ZnO:Mn thin films. The donor defects in ZnO, which are known to be the source of n-type conductivity in ZnO host matrix, play an important role in limiting the ferromagnetism to lower temperatures. A systematic study of structural, optical and magnetic properties was carried out with the primary focus on understanding the relationship between the defect concentration, material composition and ferromagnetic properties. Single phase ZnO:Mn thin films with wurtzite structure were grown under ambient argon–oxygen admixture to investigate the effect of stoichiometry and interstitial oxygen on magnetic properties. A consistent increase in crystallinity of ZnO:Mn thin films (without precipitation of Mn) with increasing argon–oxygen admixture gas pressure was observed. Extended near band edge (NBE) emission spectra with marked decrease in photoluminescence (PL) ratio in optical characterization revealed improved optical quality of ZnO:Mn thin films. Magnetic measurements revealed enhanced room temperature ferromagnetism (RTFM) in sample grown at optimum argon–oxygen ambient pressure. The enhancement was directly related to maximal core level X-ray photoelectron spectroscopic peak of stoichiometric ZnO which, in turn, favors strong hybridization of Mn in the ZnO host matrix. - Highlights: • Enhanced ferromagnetism under controlled argon–oxygen ambient pressure of 2 mbar. • Direct correlation between Zn−O bonding and ferromagnetic response in ZnO:Mn samples. • Improved crystallinity of thin films without in-situ or post-deposition annealing. • Reduced PL ratio (DLE/NBE) with improved optical transparency of ZnO:Mn thin films.

  10. Optical characterization of polysilicon thin films for solar applications

    Energy Technology Data Exchange (ETDEWEB)

    Muellerova, J.; Jurecka, S. [Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Tilina, 031 01 Liptovsky Mikulas (Slovakia); Sutta, P. [University of West Bohemia, New Technologies Research Centre, Univerzitni 8, 306 14 Plzen (Czech Republic)

    2006-06-15

    We report on the results of the investigation of optical properties and structure of PECVD deposited thin films of hydrogenated polysilicon determined by UV-Vis and IR spectroscopy. The influence of the hydrogen dilution of silane plasma at the PEVCD deposition on the film properties was investigated. The refractive index, the optical band gap energy and the microstructure of hydrogen and oxygen were analysed. The changes are discussed and correlated with the structure, the changes of the surface morphology and the hydrogen to silicon bonding. The optical band gap becomes larger than that of the undiluted sample. The results show that at dilution between 20 and 30 the transition between amorphous and crystalline phase occurs and the sample becomes a mixture of amorphous, polycrystalline phase with nano-sized grains and voids with decreasing hydrogen concentration. The presence of interstitial oxygen and oxygen bonded in surface Si-OH groups was detected. (author)

  11. Cell patterning using microstructured ferromagnetic thin films

    Science.gov (United States)

    Lai, Mei-Feng; Chen, Chia-Yi; Lee, Chiun-Peng; Huang, Hao-Ting; Ger, Tzong-Rong; Wei, Zung-Hang

    2010-05-01

    Magnetic cell patterning is demonstrated through controlling the micromagnetic states in microstructured ferromagnetic thin films. The number of magnetic nanoparticles entering the cells by endocytosis can be determined by magnetophoresis experiment and is found to be dependent of the cocultured extracellular magnetic nanoparticles concentrations. In zigzag magnetic films the effects of cell patterning differ for magnetic films at as-deposited state and at remanent states after applying fields in different directions. Remanent states of concentric rings are proposed for cell patterning. Cells can be arranged at any positions in sequence by selectively changing the magnetic field directions.

  12. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Enhanced photocurrent and photocatalytic properties of porous ZnO thin film by Ag nanoparticles

    Science.gov (United States)

    Lv, Jianguo; Zhu, Qianqian; Zeng, Zheng; Zhang, Miao; Yang, Jin; Zhao, Min; Wang, Wenhao; Cheng, Yuebing; He, Gang; Sun, Zhaoqi

    2017-12-01

    ZnO thin films were deposited using an electrodeposition method and porous morphologies could be achieved by annealing treatment. A variety of Ag nanoparticles were loaded on the surface of the ZnO thin films. Surface morphology, chemical composition, crystal phase and optical properties were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-vis spectrophotometer and micro-Raman spectroscopy. Evidence of Ag nanoparticles on the Ag-4/ZnO thin film was be verified by the SEM and XPS measurements. The XRD results indicated that the Ag nanoparticles had little effect on crystallinity of the thin films. The photoresponse and photocatalytic results indicated that the photocurrent and photocatalytic performance could be enhanced by moderate Ag nanoparticles modification on the surface of the ZnO thin film. The best photoresponse and photocatalytic activity in Ag-4/ZnO thin film results from the moderate Ag nanoparticles on the surface of ZnO thin film, which could enhanced separation and suppressed recombination of photogenerated electron-hole pairs.

  14. Ultrasmooth metal thin films on curved fused silica by laser polishing

    Science.gov (United States)

    Anemone, Gloria; Weingarten, Christian; Al Taleb, Amjad; Prieto, Carlos; Farías, Daniel

    2017-10-01

    The fabrication of atomically smooth metal films on supporting oxides is a quite demanding task, since most physical vapor deposition methods used on metals do not work properly on oxide substrates. Here, we report an alternative procedure, based on performing laser polishing of a fused silica substrate before depositing the metallic thin film. This reduces the RMS surface roughness of fused silica by ca. 33%, and increases the maximum grain size of the metallic film from 200 nm to 1200 nm. The method has been applied to a fused silica parabolic lens, which has been coated with a graphene-terminated Ru thin film. The reduction of surface roughness caused by laser polishing leads to the formation of ultrasmooth Ru thin films. Crystallinity and subnanometer roughness of the metal coating are demonstrated by the observation of He diffraction from a macroscopically curved surface.

  15. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  16. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  17. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  18. (Fe3O4) thin films

    Indian Academy of Sciences (India)

    Unknown

    resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 × 1014 ions/cm2. The Verwey transition temperature, TV, shifts towards lower temperatures with increase in ion dose. Keywords. Implantation; magnetite; thin films; pulsed laser ablation; ...

  19. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...

  20. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials

  1. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP ...

  2. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and

  3. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  4. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  5. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic

  6. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance

  7. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  8. Tailoring the Composition and Properties of Sprayed CuSbS2 Thin Films by Using Polymeric Additives

    Directory of Open Access Journals (Sweden)

    Ionut Popovici

    2012-01-01

    Full Text Available CuSbS2 thin films were obtained by spray pyrolysis deposition, using polymeric additives for controlling the surface properties and film’s composition. Ternary crystalline chalcostibite compounds have been obtained without any postdeposition treatments. XRD spectra and IR spectroscopy were used to characterize films composition and interactions between components. Films morphology and surface energy were investigated using AFM microscopy and contact angle measurements. Hydrophobic and hydrophilic polymers strongly influence the composition and film morphology.

  9. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  10. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    Science.gov (United States)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  11. Shunts in thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Malek, Stephanie; Riedel, Ingo; Parisi, Juergen [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg (Germany); Wischnath, Uli F. [aleo solar Deutschland GmbH, 26122 Oldenburg (Germany); Rechid, Juan [CIS Solartechnik GmbH and Co. KG, 20539 Hamburg (Germany)

    2011-07-01

    Shunts can lead to severe performance reduction in thin film solar cells. This work reports on a microscopic approach to locate and characterize the details of shunts in order to reveal their origin. Localization of hot spots and film disruptions is commonly addressed by lock-in infrared thermography (LIT) through visualization of the Joule heating. The resolution of this method is restricted to the {mu}m-range. We use different methods of LIT for the fast localization of local-lateral peculiarities in order to identify positions of interest. For a more detailed analysis of these features we use high resolution microscopy like Scanning Electron Microscopy (SEM) and AFM-based methods. These small-scale investigations can for example reveal whether areas of high heat dissipation are rather related to the inner structure of the involved thin films or to accidentally incorporated imperfections.

  12. Pulsed laser deposition of Fe thin films in UHV

    Science.gov (United States)

    Cole, D.; Jordan, R.; Lunney, J. G.; Coey, J. M. D.

    1997-01-01

    Pulsed laser deposition has been used to grow oriented iron thin films in ultra high vacuum on a tungsten (110) buffer layer on a substrate of Al 2O 3 (1120). Time-of-flight ion measurements were used to characterise the ablation plume in the fluence range 1.7-6.8 J cm -2, where the ion fraction varied from 0.6 to 0.8 and the average ion energy varied from 120 to 140 eV. The 30 nm iron films were deposited at a fluence of 3.0 J cm -2. In-situ optical reflectivity was used to monitor the film thickness. A substrate temperature of 650°C was found to optimise the crystalline quality of the iron films. Both the tungsten and the iron grow with [110] normal to the substrate. Transverse Kerr effect measurements showed square hysteresis loops with a coercivity of 1.3 kA/m for the iron film grown at 650°C.

  13. Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Yang Fei [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang Rui; Geng Lei; Tong Liang; Xu Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Su Weining; Yu Yao [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ma Zhongyuan; Chen Kunji [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2012-10-01

    Graphical abstract: Nano-sized marks on GST thin film were fabricated using Conductive-AFM (Atomic Force Microscope). The AFM morphology images show that the marks are ablated at the center and a raised ring surrounding it. Highlights: Black-Right-Pointing-Pointer Microstructure of GeSbTe thin films was characterized by XRD and AFM. Black-Right-Pointing-Pointer Annealing and applying electrical field can induce crystallization on thin film. Black-Right-Pointing-Pointer Conductive-AFM was used to modify the surface of GeSbTe thin film. - Abstract: GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 Degree-Sign C to 300 Degree-Sign C. X-ray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase. Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it.

  14. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    Science.gov (United States)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  15. Structural, optical and XPS study of thermal evaporated In2O3 thin films

    Science.gov (United States)

    Neelakanta Reddy, I.; Venkata Reddy, Ch; Cho, Migyung; Shim, Jaesool; Kim, Dongseob

    2017-08-01

    The nanostructured In2O3 thin films were deposited on Si n-type (1 0 0) substrates by reactive thermal evaporation. The structural, morphological, and oxidation states of the films were investigated using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The optical properties of the films were analyzed by UV-vis spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The deposited films showed c-In2O3 crystalline nanostructures with a preferred diffraction peak of (2 2 2). The truncated icosahedron shape’s morphology with a transmittance of 85% was observed in the In2O3 thin films. All the deposited indium oxide films have 3+  oxidation states.

  16. Nanostructure-Preserved Hematite Thin Film for Efficient Solar Water Splitting.

    Science.gov (United States)

    Kim, Jae Young; Youn, Duck Hyun; Kim, Ju Hun; Kim, Hyun Gyu; Lee, Jae Sung

    2015-07-01

    High-temperature annealing above 700 °C improves the activity of photoelectrochemical water oxidation by hematite photoanodes by increasing its crystallinity. Yet, it brings severe agglomeration of nanostructured hematite thin films and deteriorates electrical conductivity of the transparent conducting oxide (TCO) substrate. We report here that the nanostructure of the hematite and the conductivity of TCO could be preserved, while the high crystallinity is attained, by hybrid microwave annealing (HMA) utilizing a graphite susceptor for efficient microwave absorption. Thus, the hematite thin-film photoanodes treated by HMA record 2 times higher water oxidation photocurrents compared to a conventional thermal-annealed photoanode. The enhanced performance can be attributed to the synergistic effect of a smaller feature size of nanostructure-preserved hematite and a good electrical conductivity of TCO. The method could be generally applied to the fabrication of efficient photoelectrodes with small feature sizes and high crystallinity, which have been mutually conflicting requirements with conventional thermal annealing processes.

  17. Fabrication of surface-patterned ZnO thin films using sol-gel methods and nanoimprint lithography

    OpenAIRE

    Dai, Shuxi; Wang, Yang; Zhang, Dianbo; Han, Xiao; Shi, Qing; Wang, Shujie; Du, Zuliang

    2011-01-01

    Surface-patterned ZnO thin films were fabricated by direct imprinting on ZnO sol and subsequent annealing process. The polymer-based ZnO sols were deposited on various substrates for the nanoimprint lithography and converted to surface-patterned ZnO gel films during the thermal curing nanoimprint process. Finally, crystalline ZnO films were obtained by subsequent annealing of the patterned ZnO gel films. The optical characterization indicates that the surface patterning of ZnO thin films can ...

  18. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  19. Effect of radio frequency magnetron sputtering power on structural and optical properties of Ti6Al4V thin films

    Science.gov (United States)

    Khalaf, Mohammed K.; Al-Taay, H. F.; Ali, Dawood S.

    2017-06-01

    In this research, the effects of target sputtering power on the structure and optical properties of radio frequency (RF) sputtered Ti6Al4V films were investigated. Different sputtering RF powers were used to produce different thicknesses of Ti6Al4V thin films. From the X-ray diffraction, it was found that the Ti6A14V films had polycrystalline cubic and hexagonal structures and increased films crystallinity and crystalline size with increasing the sputtering power. Atomic forces microscopy (AFM) gave us a nanometric film character, films homogeneity, and surfaces roughness. A higher degree of roughness and average grain size with increasing RF power was exhibited. Band gap and refractive index of Ti6Al4V thin films varied with sputtering RF powers.

  20. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Wöll, Christof, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu [Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Röse, Silvana [Preparative Macromolecular Chemistry, Institute for Chemical Technology and Polymer Chemistry (ICTP), Karlsruhe Institute of Technology (KIT), Engesserstrasse 18, 76128 Karlsruhe (Germany); Institute for Biological Interfaces (IBG), Karlsruhe Institute of Technology (KIT), Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Oberst, Vanessa [Institute of Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Walheim, Stefan [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-09-07

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

  1. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    Science.gov (United States)

    Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

    2015-09-01

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

  2. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  3. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  4. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  5. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  6. Transverse piezoelectric properties of {100} – Oriented PLZT[x/65/35] thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laxmi Priya, S. [Centre for Materials for Electronics Technology (C-MET), Scientific Society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India, Athani (PO), Thrissur 680581, Kerala (India); Kumar, V., E-mail: vkumar@cmet.gov.in [Centre for Materials for Electronics Technology (C-MET), Scientific Society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India, Athani (PO), Thrissur 680581, Kerala (India); Kurokawa, Fumiya; Kanno, Isaku [Mechanical Engineering, Kobe University, Kobe 657-8501 (Japan)

    2015-02-01

    Preferentially {100}-oriented thin films of lead lanthanum zirconate titanate, (Pb{sub 1−x}La{sub x}) (Zr{sub 0.65}Ti{sub 0.35}){sub 1−x/4}O{sub 3}[PLZT(x/65/35)] with compositions near the morphotropic phase boundary (MPB) were prepared on silicon substrates (111)Pt/Ti/SiO{sub 2}/Si by sol–gel spin coating technique. The structural, micro structural and electrical characteristics have been studied as a function of thin film composition. Crystalline orientation and microstructure of the thin films have been determined by X-ray diffraction, Scanning electron microscopy, respectively. The transverse piezoelectric coefficient, e{sub 31}{sup ∗} of the PLZT thin films have been evaluated by tip deflection of unimorph cantilevers. The influence of thin film composition on e{sub 31}{sup ∗} have been determined. PLZT (7/65/35) thin film exhibited the optimum dielectric and piezoelectric characteristics with a dielectric permittivity, ε{sub r} = 917; dielectric loss, tan δ = 0.03 and average e{sub 31}{sup ∗} = −4.2 C/m{sup 2}. - Highlights: • Preferentially {100}-oriented thin films of PLZT[x/65/35]; x = 6,7,8 deposited by sol–gel spin-coating method. • Evaluation of transverse piezoelectric coefficient, e{sub 31}{sup ∗} of piezoelectric thin films by Cantilever method. • Structure–Property correlation in PLZT thin films.

  7. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    National Research Council Canada - National Science Library

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-01-01

    ... reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique...

  8. Structural and magnetic studies of Cr doped nickel ferrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, Kalpana, E-mail: kalpanapanwar99@gmail.com [Department of Pure & Applied Physics, University of Kota, Kota-324010 (India); Department of Physics, Govt. Women Engg. College, Ajmer-305002 (India); Heda, N. L. [Department of Pure & Applied Physics, University of Kota, Kota-324010 (India); Tiwari, Shailja [Department of Physics, Govt. Women Engg. College, Ajmer-305002 (India); Bapna, Komal; Ahuja, B. L. [Department of Physics, M. L. Sukhadia University, Udaipur-313001 (India); Choudhary, R. J.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, University Campus, Indore-452017 (India)

    2016-05-23

    We have studied the structural and magnetic properties of Cr doped nickel ferrite thin films deposited on Si (100) and Si (111) using pulsed laser deposition technique. The films were deposited under vacuum and substrate temperature was kept at 700°C. X-ray diffraction analysis revealed that films on both substrates have single phase cubic spinel structure. However, the film grown on Si (111) shows better crystalline behavior. Fourier transform infrared spectroscopy suggests that films on both substrates have mixed spinel structure. These films show magnetic hysteresis behavior and magnetization value of film on Si (100) is larger than that on Si (111). It turns out that structural and magnetic properties of these two films are correlated.

  9. Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering.

    Science.gov (United States)

    Han, Lin; Zhou, Jing; Sun, Yubing; Zhang, Yu; Han, Jung; Fu, Jianping; Fan, Rong

    2014-11-01

    Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20-100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferentially on the films with 30 nm sized nanopores, which is correlated with the optimum condition for cell spreading, which suggests that adhesion, spreading, and stem cell differentiation are interlinked and might be coregulated by nanotopography.

  10. Effect of polyvinyl alcohol on electrochemically deposited ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.

    2017-05-01

    Nanostructures of zinc oxide (ZnO) thin film are electrochemically deposited in the absence and presence of polyvinyl alcohol (PVA) on fluorine doped tin oxide (FTO) substrate. X-ray diffraction (XRD) patterns and Raman spectroscopy confirmed the formation of hexagonal structure of ZnO. The film prepared in the presence of PVA showed a better crystallinity and its crystalline growth along the (002) plane orientation. Field emission scanning electron microscope (FE-SEM) images display nanowire arrays (NWAs) and sponge like morphology for films prepared in the absence and presence of PVA, respectively. Photoluminescence (PL) spectra depict the film prepared in the presence PVA having less atomic defects with good crystal quality compared with other film. Dye sensitized solar cell (DSSC) is constructed using low cost eosin yellow dye and current-voltage (J-V) curve is recorded for optimized sponge like morphology based solar cell.

  11. Influence of Ion Beam Irradiation on Structural, Magnetic and Electrical Characteristics of Ho-DOPED AlN Thin Films

    Science.gov (United States)

    Hassan, Najam Ul; Hussain, Zahid; Naeem, M.; Shah, Ishfaq Ahmad; Husnain, G.; Ahmad, Ishaq; Ullah, Zaka

    Holmium (Ho)-doped AlN thin films of thicknesses 60, 90 and 300 nm were grown in pure nitrogen atmosphere via RF magnetron sputtering. The deposited thin films were irradiated with protons at a dose of 5×1014 ions/cm2 and the effects of irradiation on structural, magnetic and electrical characteristics of thin films were investigated. Rutherford backscattering spectroscopy (RBS) confirmed the presence of Al, N and Ho in prepared samples. X-ray diffraction analysis showed that crystallinity of the thin films was enhanced after irradiation and thicker films were more crystalline. Atomic force microscopy (AFM) revealed that the surface roughness and porosity of the thin films were increased after irradiation. Magnetic measurements showed that diamagnetic AlN:Ho thin films can be transformed into paramagnetic and ferromagnetic ones via suitable irradiation. The increase in carrier concentrations after irradiation was responsible for tuning the electrical and magnetic characteristics of thin films for applications in various high voltage microelectronic and magnetic devices.

  12. Enhanced ferromagnetic response in ZnO:Mn thin films by tailoring composition and defect concentration

    Science.gov (United States)

    Ilyas, Usman; Tan, T. L.; Lee, P.; Ramanujan, R. V.; Li, Fengji; Zhang, Sam; Chen, R.; Sun, H. D.; Rawat, R. S.

    2013-10-01

    The presence of structural defects degrade the crystalline quality of ZnO:Mn thin films and affects the magneto-optical properties of ZnO:Mn thin films. The donor defects in ZnO, which are known to be the source of n-type conductivity in ZnO host matrix, play an important role in limiting the ferromagnetism to lower temperatures. A systematic study of structural, optical and magnetic properties was carried out with the primary focus on understanding the relationship between the defect concentration, material composition and ferromagnetic properties. Single phase ZnO:Mn thin films with wurtzite structure were grown under ambient argon-oxygen admixture to investigate the effect of stoichiometry and interstitial oxygen on magnetic properties. A consistent increase in crystallinity of ZnO:Mn thin films (without precipitation of Mn) with increasing argon-oxygen admixture gas pressure was observed. Extended near band edge (NBE) emission spectra with marked decrease in photoluminescence (PL) ratio in optical characterization revealed improved optical quality of ZnO:Mn thin films. Magnetic measurements revealed enhanced room temperature ferromagnetism (RTFM) in sample grown at optimum argon-oxygen ambient pressure. The enhancement was directly related to maximal core level X-ray photoelectron spectroscopic peak of stoichiometric ZnO which, in turn, favors strong hybridization of Mn in the ZnO host matrix.

  13. Indium local geometry in In-Sb-Te thin films using XANES and DFT calculations

    Science.gov (United States)

    Bilovol, V.; Gil Rebaza, A. V.; Mudarra Navarro, A. M.; Errico, L.; Fontana, M.; Arcondo, B.

    2017-12-01

    In-Sb-Te when is a thin film presents a huge difference in its electrical resistivity when transform from the amorphous (insulating) to the crystalline (conducting) phase. This property made this system one of the main phase-change materials used in the data storage industry. The change in the electrical conductivity is probably associated to a change in the bonding geometry of some of its constituents. To explore this point, we present in this work an study of the bonding geometry of In atoms in In-Sb-Te films by means of In K-edge X-ray absorption near edge structure (XANES) spectroscopy using synchrotron radiation in both as deposited (amorphous) and crystalline thin films obtained as a result of resistance (R) vs temperature (T) measurements. Comparison of the XANES spectra obtained for ternary amorphous films and binary crystalline reference films suggests that in amorphous films the bonding geometry of In atoms is tetrahedral-like. After the thermal annealing has been carried out the differences in the XANES spectra of the as deposited and the annealed films indicate that the bonding geometry of In atoms changes. Based on X-ray diffraction results and ab initio calculations in the framework of the Density Functional Theory (DFT) we show that the new coordination geometry is associated with a tendency of In atoms towards octahedral-like.

  14. Elastic Properties of Molecular Glass Thin Films

    Science.gov (United States)

    Torres, Jessica

    2011-12-01

    This dissertation provides a fundamental understanding of the impact of bulk polymer properties on the nanometer length scale modulus. The elastic modulus of amorphous organic thin films is examined using a surface wrinkling technique. Potential correlations between thin film behavior and intrinsic properties such as flexibility and chain length are explored. Thermal properties, glass transition temperature (Tg) and the coefficient of thermal expansion, are examined along with the moduli of these thin films. It is found that the nanometer length scale behavior of flexible polymers correlates to its bulk Tg and not the polymers intrinsic size. It is also found that decreases in the modulus of ultrathin flexible films is not correlated with the observed Tg decrease in films of the same thickness. Techniques to circumvent reductions from bulk modulus were also demonstrated. However, as chain flexibility is reduced the modulus becomes thickness independent down to 10 nm. Similarly for this series minor reductions in T g were obtained. To further understand the impact of the intrinsic size and processing conditions; this wrinkling instability was also utilized to determine the modulus of small organic electronic materials at various deposition conditions. Lastly, this wrinkling instability is exploited for development of poly furfuryl alcohol wrinkles. A two-step wrinkling process is developed via an acid catalyzed polymerization of a drop cast solution of furfuryl alcohol and photo acid generator. The ability to control the surface topology and tune the wrinkle wavelength with processing parameters such as substrate temperature and photo acid generator concentration is also demonstrated. Well-ordered linear, circular, and curvilinear patterns are also obtained by selective ultraviolet exposure and polymerization of the furfuryl alcohol film. As a carbon precursor a thorough understanding of this wrinkling instability can have applications in a wide variety of

  15. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  16. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  17. Thin films of molecular materials synthesized from fisher's carbene ferrocenyl: Film formation and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Vergara, M.E. [Coordinacion de Ingenieria Mecatronica. Escuela de Ingenieria, Universidad Anahuac del Norte. Avenida Lomas de la Anahuac s/n, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)], E-mail: elena.sanchez@anahuac.mx; Ortiz, A. [Instituto de Investigaciones en Materiales. Universidad Nacional Autonoma de Mexico. A. P. 70-360, 04510, Mexico, DF (Mexico); Alvarez-Toledano, C.; Moreno, A. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico. Circuito Exterior, Ciudad Universitaria, 04510, Mexico, DF (Mexico); Alvarez, J.R. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Ciudad de Mexico. Calle del Puente 222, Col. Ejidos de Huipulco, 14380, Mexico, DF (Mexico)

    2008-07-31

    The synthesis of materials from Fisher's carbene ferrocenyl of the elements chromium, molybdenum and tungsten was carried out. The Fisher's compounds that were synthesized included the following combinations of two different metallic atoms: iron with chromium, iron with molybdenum and iron with tungsten. The molecular solids' preparation was done in electro-synthesis cells with platinum electrodes. Thin films were prepared by vacuum thermal evaporation on quartz substrates and crystalline silicon wafers. Pellets and thin films from these compounds were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy and ellipsometry. The powder and thin films synthesized from these materials show the same intra-molecular bonds shown by infrared spectroscopy results, suggesting that thermal evaporation does not alter these bonds in spite of the thin films being amorphous, in contrast with other bimetallic complexes where material decomposition occurs. The differences in the conductivity values of the prepared films are very small, so they may be attributed to the different metallic ions employed in each case. The tungsten complex exhibits a higher conductivity than the molybdenum and chromium complexes at room temperature. Electrical conductivity values found for thin films are higher than for pellets made of the same molecular materials.

  18. Structures and properties of poly(3-alkylthiophene) thin-films fabricated though vapor-phase polymerization.

    Science.gov (United States)

    Back, Ji-Woong; Song, Eun-Ah; Lee, Keum-Joo; Lee, Youn-Kyung; Hwang, Chae-Ryong; Jo, Sang-Hyun; Jung, Woo-Gwang; Kim, Jin-Yeol

    2012-02-01

    Organic semiconducting polymer thin-films of 3-hexylthiophene, 3-octylthiophene, 3-decylthiophene, containing highly oriented crystal were fabricated by gas-phase polymerization using the CVD technique. These poly(3-alkylthiophene) films had a crystallinity up to 80%, and possessed a Hall mobility up to 10 cm2/Vs. The degree of crystalinity and the mobility values increased as the alkyl chain length increased. The crystal structure of the polymers was composed of stacked layers constructed by a side-by-side arrangement of alkyl chains and in-plane pi-pi stacking. These thin films are capable of being applied to organic electronics as the active materials used in thin-film transistors and organic photovoltaic cells.

  19. Characterization of MAPLE deposited WO3 thin films for electrochromic applications

    Science.gov (United States)

    Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

    2017-01-01

    Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

  20. Control of Molecular Ordering, Alignment, and Charge Transport in Solution-Processed Conjugated Polymer Thin Films

    Directory of Open Access Journals (Sweden)

    Mincheol Chang

    2017-06-01

    Full Text Available Morphology of conjugated polymers is a critical factor that significantly affects intrinsic charge transport characteristics and in turn performance of polymer-based devices. Morphological defects including misaligned crystalline grains and grain boundaries significantly impede efficient charge hopping between transport sites, resulting in degradation of device performance. Therefore, one important challenge is to control morphology of active polymer thin-films for achieving high performance flexible electronic devices. In the past decade, significant progress has been achieved in morphology control of conjugated polymer thin-films using solution-based processing techniques. This review focuses on recent advances in processing strategies that can tune the morphologies and thus impact charge transport properties of conjugated polymer thin films. Of the available processing strategies, polymer solution treatments and film deposition techniques will be mainly highlighted. The correlation between processing conditions, active layer morphologies, and device performance will be also be discussed.

  1. Investigations of electrical and optical properties of functional TCO thin films

    Directory of Open Access Journals (Sweden)

    Domaradzki Jarosław

    2015-06-01

    Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

  2. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Yangang Liang

    2016-01-01

    Full Text Available We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  3. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

    Science.gov (United States)

    Sakai, Masatoshi; Koh, Tokuyuki; Toyoshima, Kenji; Nakamori, Kouta; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Shinamura, Shoji; Kudo, Kazuhiro

    2017-07-01

    A solvent-free printing process for printed electronics is successfully developed using toner-type patterning of organic semiconductor toner particles and the subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors are prepared by electrically distributing the charged toner onto a Au electrode on a substrate film, followed by thermal lamination. The thermal lamination is effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

  5. Zeolite thin films: from computer chips to space stations.

    Science.gov (United States)

    Lew, Christopher M; Cai, Rui; Yan, Yushan

    2010-02-16

    Zeolites are a class of crystalline oxides that have uniform and molecular-sized pores (3-12 A in diameter). Although natural zeolites were first discovered in 1756, significant commercial development did not begin until the 1950s when synthetic zeolites with high purity and controlled chemical composition became available. Since then, major commercial applications of zeolites have been limited to catalysis, adsorption, and ion exchange, all using zeolites in powder form. Although researchers have widely investigated zeolite thin films within the last 15 years, most of these studies were motivated by the potential application of these materials as separation membranes and membrane reactors. In the last decade, we have recognized and demonstrated that zeolite thin films can have new, diverse, and economically significant applications that others had not previously considered. In this Account, we highlight our work on the development of zeolite thin films as low-dielectric constant (low-k) insulators for future generation computer chips, environmentally benign corrosion-resistant coatings for aerospace alloys, and hydrophilic and microbiocidal coatings for gravity-independent water separation in space stations. Although these three applications might not seem directly related, they all rely on the ability to fine-tune important macroscopic properties of zeolites by changing their ratio of silicon to aluminum. For example, pure-silica zeolites (PSZs, Si/Al = infinity) are hydrophobic, acid stable, and have no ion exchange capacity, while low-silica zeolites (LSZs, Si/Al zeolites that have not been exploited before, such as a higher elastic modulus, hardness, and heat conductivity than those of amorphous porous silicas, and microbiocidal capabilities derived from their ion exchange capacities. Finally, we briefly discuss our more recent work on polycrystalline zeolite thin films as promising biocompatible coatings and environmentally benign wear-resistant and

  6. Magnetic properties of electrodeposited Co-W thin films

    Energy Technology Data Exchange (ETDEWEB)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-09-01

    Thin films of Co-W, 300--500 A thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a vibrating sample magnetometer. The magnetic properties of the films are strongly related to their microstructure. The nonmagnetic alloying element (W) affects the saturation magnetization via the dilution mechanism. The in-plane coercivity, which increases with increasing content of the hexagonal phase and with decreasing degree of (0001)h texture, is in the range of 100--600 Oe for the crystalline deposits and decreases to a few oersteds for amorphous deposits. The in-plane squareness ratio increases with the fcc or amorphous phase content and with decreasing degree of (0001)h texture. The magnetic measurements suggest that films that appeared amorphous according to their electron diffraction patterns are actually microcrystalline or at least partially crystallized.

  7. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  8. DNA Strand Patterns on Aluminium Thin Films

    Directory of Open Access Journals (Sweden)

    Fatemeh Shahhosseini

    2011-06-01

    Full Text Available A new patterning method using Deoxyribose Nucleic Acid (DNA strands capable of producing nanogaps of less than 100 nm is proposed and investigated in this work. DNA strands from Bosenbergia rotunda were used as the fundamental element in patterning DNA on thin films of aluminium (Al metal without the need for any lithographic techniques. The DNA strands were applied in buffer solutions onto thin films of Al on silicon (Si and the chemical interactions between the DNA strands and Al creates nanometer scale arbitrary patterning by direct transfer of the DNA strands onto the substrate. This simple and cost-effective method can be utilized in the fabrication of various components in electronic chips for microelectronics and Nano Electronic Mechanical System (NEMS applications in general.

  9. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  10. Thin Films of Polypyrrole on Particulate Aluminum

    Science.gov (United States)

    2009-02-01

    C H R I S T O P H E R V E T T E R , X I A O N I N G Q I , S U B R A M A N Y A M V . K A S I S O M A Y A J U L A , A N D Thin Films of Polypyrrole on...1. REPORT DATE FEB 2009 2. REPORT TYPE 3. DATES COVERED 00-00-2009 to 00-00-2009 4. TITLE AND SUBTITLE Thin Films of Polypyrrole on...layer 3 Why Polypyrrole /Flake? Polypyrrole  Poor mechanical properties  Poor adhesion  Solubility issues  Continuous layer needed 4 Polypyrrole Coated

  11. Sulfide precursor concentration and lead source effect on PbS thin films properties

    Energy Technology Data Exchange (ETDEWEB)

    Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

    2016-05-05

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  12. Grayscale image recording on Ge2Sb2Te5 thin films through laser-induced structural evolution

    Science.gov (United States)

    Wei, Tao; Wei, Jingsong; Zhang, Kui; Zhao, Hongxia; Zhang, Long

    2017-02-01

    Chalcogenide Ge2Sb2Te5 thin films have been widely exploited as binary bit recording materials in optical and non-volatile electronic information storage, where the crystalline and amorphous states are marked as the information bits “0” and “1”, respectively. In this work, we demonstrate the use of Ge2Sb2Te5 thin films as multi-level grayscale image recording materials. High-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through taking advantage of laser-induced structural evolution characteristic. Experimental results indicate that the change of laser energy results in the structural evolution of Ge2Sb2Te5 thin films. The structural evolution induces the difference of electronic polarizability and reflectivity, and high-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through direct laser writing method, accordingly.

  13. Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films

    Science.gov (United States)

    Jian, Sheng-Rui; Chen, Guo-Ju; Lee, Jyh-Wei

    2017-12-01

    In this study, the effects of post-annealing on the microstructural, surface morphological and nanomechanical properties of Cu-doped In2O3 (CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were deposited on the c-plane sapphire substrates at room temperature using the radio frequency magnetron sputtering system. Post-annealing was carried out at the temperatures of 750-950 °C, and resulted in progressive increase in the average grain size and improved crystallinity of CIO thin films. In addition, the hardness and Young's modulus of CIO thin films were measured by a nanoindenter equipped with a Berkovich diamond tip and operated with the continuous contact stiffness measurements mode. Results indicated that the values of hardness and Young's modulus of CIO thin films increased when the annealing temperature increased from 750 to 950 °C.

  14. Thin films for gas sensors

    Science.gov (United States)

    Pires, Jose Miguel Alves Correia

    Nos ultimos anos tem-se assistido a um aumento dos investimentos na investigacao de novos materiais para aplicacao em sensores. Apesar de ja existir um bom numero de dispositivos explorados comercialmente, muitas vezes, quer devido aos elevados custos de producao, quer devido a uma crescente exigencia do ponto de vista das caracteristicas de funcionamento, continua a ser necessario procurar novos materiais ou novas formas de producao que permitam baixar os custos e melhorar o desempenho dos dispositivos. No campo dos sensores de gases tem-se verificado continuos avancos nos ultimos anos. Continua todavia a ser necessario conhecer melhor, tanto os processos de producao dos materiais, como os mecanismos que regulam a sensibilidade dos dispositivos aos gases, de modo a orientar adequadamente a investigacao dos novos materiais, nomeadamente no que se refere a optimizacao dos parâmetros que nao satisfazem ainda os requisitos do mercado. Um dos materiais que tem mostrado melhores qualidades para aplicacao em sensores de gases de tipo resistivo e o dioxido de estanho. Este material tem sido produzido sob diversas formas e usando diferentes tecnicas, como sejam: sol-gel [1], pulverizacao catodica (sputtering) por magnetrao [2-4], sinterizacao de pos [5, 6], ablacao laser [7] ou RGTO [8]. Os resultados obtidos revelam que as caracteristicas dos dispositivos sao muito dependentes das tecnicas usadas na sua producao. A deposicao usando sputtering reactivo por magnetrao e uma tecnica que permite obter filmes finos de oxido de estanho com diferentes caracteristicas, quer do ponto de vista da estrutura, quer da composicao, e por isso, tambem, com diferentes sensibilidades aos gases. No âmbito deste trabalho, foram produzidos filmes de SnO2 usando sputtering DC reactivo com diferentes condicoes de deposicao. Os substratos usados foram lâminas de vidro e o alvo foi estanho com 99.9% de pureza. Foi estudada a influencia da atmosfera de deposicao, da pressao parcial do O2, da

  15. Superconductivity of Thin Film Intermetallic Compounds.

    Science.gov (United States)

    1985-09-15

    D-RISE 2?I SUPERCONDUCTIVITY OF THIN FILM INTERMETLLIC COMPOUNDS I/i. (U) MINNESOTR UNIV MINNERPOLIS SCHOOL OF PHYSICS AND RSTRONOMY R M GOLDMRN 15...parameters to either higher temperatures of higher critical fields. Materials under study are the superconducting Chevrel phase compounds, selected Heavy...superconducting field effect. Processing of the Chevrel Phase I compounds is carried out in a multi-source deposition system. The latter has been upgraded and

  16. Aluminum induced crystallization of amorphous Ge thin films on insulating substrate

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ch. Kishan, E-mail: kisn@igcar.gov.in; Tah, T.; Sunitha, D. T.; Polaki, S. R.; Madapu, K. K.; Ilango, S.; Dash, S.; Tyagi, A. K. [Surface and Nanoscience Division, Indira Gandhi centre for Atomic Research, Kalpakkam – 603102 (India)

    2016-05-23

    Aluminium (metal) induced crystallization of amorphous Ge in bilayer and multilayer Ge/Al thin films deposited on quartz substrate at temperature well below the crystallization temperature of bulk Ge is reported. The crystallization of poly-Ge proceeds via formations of dendritic crystalline Ge grains in the Al matrix. The observed phases were characterized by Raman spectroscopy and X-ray diffraction. The microstructure of Al thin film layer was found to have a profound influence on such crystallization process and formation of dendritic grains.

  17. VUV photoabsorption spectroscopy of amorphous and crystalline sulphur dioxide films

    Science.gov (United States)

    Holtom, P. D.; Dawes, A.; Davis, M. P.; Webb, S. M.; Hoffmann, S. V.; Mukerji, R. J.; Mason, N. J.

    Sulphur dioxide, SO2 is one of the simplest sulphur compounds and has been observed widely in the interstellar medium and in the solar system. It has also been observed in the atmospheres of Venus and Io and on the surface of Europa. Gaseous sulphur dioxide has recently been observed for the first time in the extragalactic medium. (Martin et al 1979). Five SO2 transitions detected towards NGC 253 with a total column density of 7 x 1013 cm-1 have been reported. SO2 is also present on Io, in solid, liquid and gaseous form. For example solid phase SO2 was suggested as the source for the 4.05-4.08 μm feature of SO2 seen in the spectrum of Io (Smythe, Nelson & Nash 1979),(Fanale et al 1979). To date most studies of SO2 spectroscopy have been in the gaseous phase with only a few experiments reported on solid SO2. We have used the UV1 beam line on the ASTRID synchrotron based at the University of Aarhus in Denmark to measure the VUV spectrum of condensed phase SO2 over the range of 120 - 350 nm and in the temperature range of 25 - 80 K. (For a full description of our equipment see Dawes, Holtom & Mason 2003). In this poster we report the results of a detailed study of the spectroscopy of solid SO2 in the VUV and UV. At 25 K the VUV spectrum for a fast deposited film (2.8 μm/hr) suggests an amorphous ice layer is formed, in contrast a slow deposition (0.21 μ m/hr) suggests that a more crystalline ice is formed. Annealing (heating of the 25 K fast deposited ice) to 80 K revealed a phase change producing crystalline SO2 ice from the originally amorphous sample. Such spectroscopic features might be used to determine thermal histories of planetary ice. Further details will be presented at the conference.

  18. Optical and structural properties of natural MnSeO{sub 4} mineral thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, Ishak Afsin, E-mail: akariper@gmail.com [Erciyes University, Education Faculty, Kayseri (Turkey)

    2017-05-15

    Manganese selenite (MnSeO{sub 4}) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO{sub 4} thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO{sub 4} thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO{sub 4} thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575. (author)

  19. Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films.

    Science.gov (United States)

    Qiu, Gang; Nian, Qiong; Motlag, Maithilee; Jin, Shengyu; Deng, Biwei; Deng, Yexin; Charnas, Adam R; Ye, Peide D; Cheng, Gary J

    2018-01-16

    Few-layer black phosphorus (BP) has emerged as one of the most promising candidates for post-silicon electronic materials due to its outstanding electrical and optical properties. However, lack of large-scale BP thin films is still a major roadblock to further applications. The most widely used methods for obtaining BP thin films are mechanical exfoliation and liquid exfoliation. Herein, a method of directly synthesizing continuous BP thin films with the capability of patterning arbitrary shapes by employing ultrafast laser writing with confinement is reported. The physical mechanism of confined laser metaphase transformation is understood by molecular dynamics simulation. Ultrafast laser ablation of BP layer under confinement can induce transient nonequilibrium high-temperature and high-pressure conditions for a few picoseconds. Under optimized laser intensity, this process induces a metaphase transformation to form a crystalline BP thin film on the substrate. Raman spectroscopy, atomic force microscopy, and transmission electron microscopy techniques are utilized to characterize the morphology of the resulting BP thin films. Field-effect transistors are fabricated on the BP films to study their electrical properties. This unique approach offers a general methodology to mass produce large-scale patterned BP films with a one-step manufacturing process that has the potential to be applied to other 2D materials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  1. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  2. Thermal properties of methyltrimethoxysilane aerogel thin films

    Directory of Open Access Journals (Sweden)

    Leandro N. Acquaroli

    2016-10-01

    Full Text Available Aerogels are light and porous solids whose properties, largely determined by their nanostructure, are useful in a wide range of applications, e.g., thermal insulation. In this work, as-deposited and thermally treated air-filled silica aerogel thin films synthesized using the sol-gel method were studied for their thermal properties using the 3-omega technique, at ambient conditions. The thermal conductivity and diffusivity were found to increase as the porosity of the aerogel decreased. Thermally treated films show a clear reduction in thermal conductivity compared with that of as-deposited films, likely due to an increase of porosity. The smallest thermal conductivity and diffusivity found for our aerogels were 0.019 W m−1 K−1 and 9.8 × 10-9 m2 s−1. A model was used to identify the components (solid, gaseous and radiative of the total thermal conductivity of the aerogel.

  3. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  4. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  5. Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Kalyani Nadarajah

    2013-01-01

    Full Text Available Zinc Oxide (ZnO thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM, atomic force microscopy (AFM, and X-ray diffractometry (XRD techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL technique. X-ray diffraction data showed that the films were grown in the (002 direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm.

  6. Erbium-doped yttria thin films prepared by metal organic decomposition for up-conversion

    Energy Technology Data Exchange (ETDEWEB)

    Andriamiadamanana, Christian, E-mail: chriast@yahoo.fr [LCMCP UMR7574 CNRS/UPMC/Chimie Paristech, 11 Rue Pierre et Marie Curie, F-75235 Paris (France); IRDEP, UMR 7174 CNRS/EDF/Chimie ParisTech, 6 Quai Watier, F-78401 Chatou (France); Ibanez, Alain [Institut Néel, UPR2940, CNRS/Université Joseph Fourier, 25 rue des Martyrs, BP166, F-38042, Grenoble Cedex 9 (France); Ferrier, Alban [LCMCP UMR7574 CNRS/UPMC/Chimie Paristech, 11 Rue Pierre et Marie Curie, F-75235 Paris (France); Joudrier, Anne-Laure [LCMCP UMR7574 CNRS/UPMC/Chimie Paristech, 11 Rue Pierre et Marie Curie, F-75235 Paris (France); IRDEP, UMR 7174 CNRS/EDF/Chimie ParisTech, 6 Quai Watier, F-78401 Chatou (France); Lombez, Laurent [IRDEP, UMR 7174 CNRS/EDF/Chimie ParisTech, 6 Quai Watier, F-78401 Chatou (France); Liotaud, Marine [Institut Néel, UPR2940, CNRS/Université Joseph Fourier, 25 rue des Martyrs, BP166, F-38042, Grenoble Cedex 9 (France); Guillemoles, Jean-François [IRDEP, UMR 7174 CNRS/EDF/Chimie ParisTech, 6 Quai Watier, F-78401 Chatou (France); Pellé, Fabienne [LCMCP UMR7574 CNRS/UPMC/Chimie Paristech, 11 Rue Pierre et Marie Curie, F-75235 Paris (France)

    2013-06-30

    Er:Y{sub 2}O{sub 3} thin films have been obtained by spin coating process. Precursor solutions were prepared using nitrates as metal precursors and water as solvent. Citric, malic, and lactic acids were used as complexant. Investigations on resin compositions and on their coating parameters have been made, leading to crack-free thin films with citric and malic acids after direct deposition under standard room conditions (temperature, pressure and atmosphere). The films are homogeneous with a low root mean square roughness, less than 2.5 nm. We demonstrated that the nature of the carboxylic acid is the key point to obtain high quality thin films on silicon substrates from 20 nm up to 230 nm thick, while the film porosity is related to the number of carbon in the acid molecule. All films exhibit up-conversion luminescence in the near infrared and in the visible range, under 1.54 μm laser excitation. Furthermore, the up-conversion luminescence intensity increases with the applied annealing temperature on the films, due to an improvement of their crystallinity and to the total decomposition of organics. - Highlights: • We deposit films by spin-coating, using aqueous precursor solutions. • No special control of atmosphere is needed during all the process. • The organics are the key parameter for controlling the quality of films. • Multilayer have been obtained with all carboxylic acids we have studied. • All films exhibit an up-conversion property.

  7. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  8. Evaluation of the piezoelectric properties and voltage generation of flexible zinc oxide thin films.

    Science.gov (United States)

    Laurenti, M; Stassi, S; Lorenzoni, M; Fontana, M; Canavese, G; Cauda, V; Pirri, C F

    2015-05-29

    Local piezoresponse and piezoelectric output voltage were evaluated on ZnO thin films deposited by radio-frequency magnetron sputtering on hard Si/Ti/Au and flexible Cu-coated polyimide substrates. Three different thicknesses of ZnO films were studied (285 nm, 710 nm, and 1380 nm), focusing on characteristics like crystallinity, grain size, surface roughness, and morphology. Independent of the nature of the metal layer and the substrate, our results show that thicker films presented a higher level of crystallinity and a preferential orientation along the c-axis direction, as well as a lower density of grain boundaries and larger crystal sizes. The improvement of the crystalline structure of the material directly enhances its piezoelectric properties, as confirmed by the local characterizations performed by piezoresponse force microscopy and by the evaluation of the output voltage generation under the application of a periodical mechanical deformation on the whole film. In particular, the highest value of the d33 coefficient obtained (8 pm V(-1)) and the highest generated output voltage (0.746 V) belong to the thickest films on hard and flexible substrates, respectively. These results envision the use of ZnO thin films--particularly on flexible substrates--as conformable, reliable, and efficient active materials for use in nanosensing, actuation, and piezoelectric nanogenerators.

  9. Tuning Eu{sup 3+} emission in europium sesquioxide films by changing the crystalline phase

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal, A., E-mail: antonio.mariscal@csic.es [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain); Quesada, A. [Ceramics for Smart Systems Group, Instituto de Cerámica y Vidrio, C/ Kelsen 5, 28049 Madrid (Spain); Camps, I. [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain); Palomares, F.J. [Instituto de Ciencia de Materiales de Madrid, C/ Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Fernández, J.F. [Ceramics for Smart Systems Group, Instituto de Cerámica y Vidrio, C/ Kelsen 5, 28049 Madrid (Spain); Serna, R. [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain)

    2016-06-30

    Highlights: • PLD production of high quality europium sesquioxide (Eu{sub 2}O{sub 3}) films. • The deposition of Al{sub 2}O{sub 3} capping and/or buffer layers modifies the crystallization for Eu{sub 2}O{sub 3} films upon annealing. • The formation of cubic or monoclinic phases can be favored. • Eu{sup 3+} emission tuning is achieved as a consequence of crystal field effects. - Abstract: We report the growth of europium sesquioxide (Eu{sub 2}O{sub 3}) thin films by pulsed laser deposition (PLD) in vacuum at room temperature from a pure Eu{sub 2}O{sub 3} ceramic bulk target. The films were deposited in different configurations formed by adding capping and/or buffer layers of amorphous aluminum oxide (a-Al{sub 2}O{sub 3}). The optical properties, refractive index and extinction coefficient of the as deposited Eu{sub 2}O{sub 3} layers were obtained. X-ray photoelectron spectroscopy (XPS) measurements were done to assess its chemical composition. Post-deposition annealing was performed at 500 °C and 850 °C in air in order to achieve the formation of crystalline films and to accomplish photoluminescence emission. According to the analysis of X-ray diffraction (XRD) spectra, cubic and monoclinic phases were formed. It is found that the relative amount of the phases is related to the different film configurations, showing that the control over the crystallization phase can be realized by adequately designing the structures. All the films showed photoluminescence emission peaks (under excitation at 355 nm) that are attributed to the intra 4f-transitions of Eu{sup 3+} ions. The emission spectral shape depends on the crystalline phase of the Eu{sub 2}O{sub 3} layer. Specifically, changes in the hypersensitive {sup 5}D{sub 0} → {sup 7}F{sub 2} emission confirm the strong influence of the crystal field effect on the Eu{sup 3+} energy levels.

  10. Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

    Science.gov (United States)

    Schmidt, Rainer; Ventura, Jofre; Langenberg, Eric; Nemes, Norbert M.; Munuera, Carmen; Varela, Manuel; Garcia-Hernandez, Mar; Leon, Carlos; Santamaria, Jacobo

    2012-07-01

    The detection of true magnetocapacitance (MC) as a manifestation of magnetoelectric coupling (MEC) in multiferroic materials is a nontrivial task, because pure magnetoresistance (MR) of an extrinsic Maxwell-Wagner-type dielectric relaxation can lead to changes in capacitance [G. Catalan, Appl. Phys. Lett.APPLAB0003-695110.1063/1.2177543 88, 102902 (2006)]. In order to clarify such difficulties involved with dielectric spectroscopy on multiferroic materials, we have simulated the dielectric permittivity ɛ' of two dielectric relaxations in terms of a series of one intrinsic film-type and one extrinsic Maxwell-Wagner-type relaxation. Such a series of two relaxations was represented in the frequency- (f-) and temperature- (T-) dependent notations ɛ' vs f and ɛ' vs T by a circuit model consisting in a series of two ideal resistor-capacitor (RC) elements. Such simulations enabled rationalizing experimental f-, T-, and magnetic field- (H-) dependent dielectric spectroscopy data from multiferroic epitaxial thin films of BiMnO3 (BMO) and BiFeO3 (BFO) grown on Nb-doped SrTiO3. Concomitantly, the deconvolution of intrinsic film and extrinsic Maxwell-Wagner relaxations in BMO and BFO films was achieved by fitting f-dependent dielectric data to an adequate equivalent circuit model. Analysis of the H-dependent data in the form of determining the H-dependent values of the equivalent circuit resistors and capacitors then yielded the deconvoluted MC and MR values for the separated intrinsic dielectric relaxations in BMO and BFO thin films. Substantial intrinsic MR effects up to 65% in BMO films below the magnetic transition (TC≈100 K) and perceptible intrinsic MEC up to -1.5% near TC were identified unambiguously.

  11. Transmission electron microscopy for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reininghaus, Nies; Schmidt, Vitalij; Hachmann, Wiebke; Heinzmann, Ulrich [Molecular and Surface Physics, Bielefeld University (Germany); Gruss, Stefan; Stiebig, Helmut [Malibu GmbH and Co. KG, Bielefeld (Germany)

    2011-07-01

    Thin-film amorphous and microcrystalline silicon are promising materials for photovoltaics as they have the potential to reduce the solar cell costs. In case of microcrystalline silicon the crystalline volume fraction is related to the efficiency factor of solar cells because it provides information about the microstructure of the material and the defect density. With Transmission Electron Microscopy of cross-sections it is possible to show the microstructure of the cells. However to determine the structure of the bulk it is necessary to analyse the diffraction of the electron beam. For the purpose of imaging diffraction patterns and displaying dark fields a new camera system has been installed in the Phillips CM200. With much higher sensitivity and a larger photoactive area it is possible to take images of the low-intensity diffraction and the dark field patterns.

  12. Phase modification of copper phthalocyanine semiconductor by converting powder to thin film

    Science.gov (United States)

    Ai, Xiaowei; Lin, Jiaxin; Chang, Yufang; Zhou, Lianqun; Zhang, Xianmin; Qin, Gaowu

    2018-01-01

    Thin films of copper phthalocyanine (CuPc) semiconductor were deposited on glass substrates by a thermal evaporation system using the CuPc powder in a high vacuum. The crystal structures of both the films and the powder were measured by the X-ray diffraction spectroscopy technique. It is observed that CuPc films only show one peak at 6.84°, indicating a high texture of α phase along (200) orientation. In comparison, CuPc powder shows a series of peaks, which are confirmed from the mixture of both α and β phases. The effects of substrate anneal temperature on the film structure, grain size and optical absorption property of CuPc films were also investigated. All the films are of α phase and the full width of half maximum for (200) diffraction peak becomes narrow with increasing the substrate temperatures. The average grain size calculated by the Scherrer's formula is 33.63 nm for the film without anneal, which is increased up to 58.29 nm for the film annealed at 200 °C. Scanning electron microscope was further measured to prove the growth of crystalline grain and to characterize the morphologies of CuPc films. Ultraviolet-visible absorption spectra were employed to study the structure effect on the optical properties of both CuPc films and powder. Fourier Transform infrared spectroscopy was used to identify the crystalline nature of both CuPc powder and film.

  13. Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

    OpenAIRE

    Chen, Yen-Hua; Tu, Kuo-Jui

    2012-01-01

    Hematite (Fe2O3) thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases ...

  14. Electrodeposition of inorganic/organic hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, Tsukasa [Center of Innovative Photovoltaic Systems, Gifu University (Japan); Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University (Japan); Zhang, Jingbo; Komatsu, Daisuke; Sawatani, Seiichi; Minoura, Hideki [Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University (Japan); Pauporte, Thierry; Lincot, Daniel [Laboratoire d' Electrochimie et Chimie Analytique, Ecole Nationale Superieure de Chimie de Paris 11 rue P. et M. Curie, 75231 Paris cedex 05 (France); Oekermann, Torsten [Institut fuer Physikalische Chemie und Elektrochemie, Universitaet Hannover (Germany); Schlettwein, Derck [Institut fuer Angewandte Physik, Justus-Liebig-Universitaet Giessen (Germany); Tada, Hirokazu [Institute for Molecular Science, Higashiyama (Japan); Woehrle, Dieter [Institut fuer Organische und Makromolekulare Chemie, Universitaet Bremen (Germany); Funabiki, Kazumasa; Matsui, Masaki [Department of Materials Science and Technology, Faculty of Engineering, Gifu University (Japan); Miura, Hidetoshi [Chemicrea Inc., Tokyo (Japan); Yanagi, Hisao [Graduate School of Materials Science, Nara Institute of Science and Technology Takayama-cho 8916-5, Ikoma (Japan)

    2009-01-09

    Electrodeposition of inorganic compound thin films in the presence of certain organic molecules results in self-assembly of various hybrid thin films with new properties. Examples of new discoveries by the authors are reviewed, taking cathodic formation of a ZnO/dye hybrid as the leading example. Hybridization of eosinY leads to the formation of highly oriented porous crystalline ZnO as the consequence of dye loading. The hybrid formation is a highly complicated process involving complex chemistry of many molecular and ionic constituents. However, electrochemical analyses of the relevant phenomena indicate the possibility of reaching a comprehensive understanding of the mechanism, giving us the chance to further develop them into industrial technologies. The porous crystals are ideal for photoelectrodes in dye-sensitized solar cells. As the process also permits the use of non-heat-resistant substrates, the technology can be applied for the development of colorful and light-weight plastic solar cells. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  15. The bioactivity mechanism of magnetron sputtered bioglass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berbecaru, C. [University of Bucharest, Faculty of Physics, Bucharest 077125 (Romania); Stan, G.E., E-mail: george_stan@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, Bucharest-Magurele 077125 (Romania); Pina, S. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro 3810-193 (Portugal); Tulyaganov, D.U. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro 3810-193 (Portugal); Turin Polytechnic University in Tashkent, 700095 Tashkent (Uzbekistan); Ferreira, J.M.F. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro 3810-193 (Portugal)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer RF-sputtering: an efficient solution for synthesizing bioactive glass thin films. Black-Right-Pointing-Pointer Electrostatic interactions between charged surface and ions from stagnant solution. Black-Right-Pointing-Pointer Heterogeneous-type nucleation of apatite from the SBF solution on the glass surface. Black-Right-Pointing-Pointer Peculiarities of hydroxyapatite nucleation process and biomineralisation kinetics. - Abstract: Smooth and adherent bioactive coatings with {approx}0.5 {mu}m thickness were deposited onto Si substrates by the radiofrequency-magnetron sputtering method at 150 Degree-Sign C under 0.4 Pa of Ar atmosphere using a bioglass powder as target with a composition in the SiO{sub 2}-CaO-MgO-P{sub 2}O{sub 5}-CaF{sub 2}-B{sub 2}O{sub 3}-Na{sub 2}O system. The bioactivity of the as-prepared bioglass samples was assessed by immersion in simulated body fluid for different periods of time up to 30 days. Grazing incidence X-ray diffraction, Fourier transform infra-red spectrometry and energy dispersive spectroscopy revealed that important structural and compositional changes took place upon immersing the samples in SBF. Whilst the excellent biomineralisation capability of the BG thin films was demonstrated by the in vitro induction of extensive and homogenous crystalline hydroxyapatite in-growths on their surfaces, a series of bioactivity process kinetics peculiarities (derogations from the classical model) were emphasised and thoroughly discussed.

  16. Introduction to thin film transistors physics and technology of TFTs

    CERN Document Server

    Brotherton, S D

    2013-01-01

    Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

  17. Bimolecular recombination and complete photocurrent decay in metallophthalocyanine thin films

    Science.gov (United States)

    Noah, Ramsey S.

    Metallophthalocyanines (MPc) are a class of planar small molecule semiconductors that are of great interest due to their applications in organic solar cells. However, a thorough understanding of many of their charge transport properties, especially those related to trap states, is lacking. In previous works the increase of grain size in MPc thin films with higher substrate temperature during the thermal evaporation process was quantified. Here, we investigate the charge transport properties of phthalocyanine with varying grain sizes in five ways: 1) intensity-varied photocurrent measurements are used to study the order of recombination in zinc phthalocyanine (ZnPc) thin films; 2) the conduction dependence on oxygen doping in copper phthalocyanine (CuPc) and ZnPc is investigated through oxygen deprivation in a closed-cycle refrigerator; 3) the complete photocurrent decay in CuPc and ZnPc is explored; 4) the bandgap of CuPc and ZnPc is derived from wide temperature range (˜ 80K - 351K) resistance measurements; 5) thermally stimulated currents (TSC) in CuPc and ZnPc are induced using a modified Reber methodology. An explanation for oxygen doping in these type of thin films is presented and in addition to bimolecular recombination a second model is also applied to measurements of intensity-varied photocurrent. Our data suggest several interesting aspects of the charge transport properties in these organic semiconductors. Recombination may not be dominated by monomolecular processes but instead bimolecular. More amorphous (low deposition temperature) samples show a greater change in conductivity due to oxygen doping. The photocurrent of more crystalline samples decays more rapidly compared to amorphous samples, suggesting that deeper trap states are present in lower deposition temperature samples. The bandgap derived from temperature-varied resistance measurements is systematically low due to slow detrapping. Unlike TSC measurements in micrometer-thick organic films

  18. Anisotropic magnetothermoelectric power of ferromagnetic thin films

    Science.gov (United States)

    Anwar, M. S.; Lacoste, B.; Aarts, J.

    2017-11-01

    In this article, we report the measurements of the magnetothermoelectric power (MTEP) in metallic ferromagnetic thin films of Ni80 Fe20 (Permalloy; Py), Co and CrO2 at temperatures in the range of 100 K to 400 K. In 25 nm thick Py films and 50 nm thick Co films both the anisotropic magnetoresistance (AMR) and MTEP show a relative change in resistance and thermoelectric power (TEP) of the order of 0.2% when the magnetic field is reversed, and in both cases there is no significant change in AMR or MTEP after the saturation field has been reached. Surprisingly, both Py and Co films have opposite MTEP behaviour although both have the same sign for AMR and TEP. The data on half metallic ferromagnet CrO2 films show a different picture. Films of thickness of 100 nm were grown on TiO2 and on sapphire. The MTEP behavior at low fields shows peaks similar to the AMR in these films, with variations up to 1 % . With increasing field both the MR and the MTEP variations keep growing, with MTEP showing relative changes of 1.5% with the thermal gradient along the b -axis and even 20% with the gradient along the c -axis, with an intermediate value of 3% for the film on sapphire. It appears that the low-field effects are due to the magnetic domain state, and the high-field effects are intrinsic to the electronic structure of CrO2 and intergarian tunnelling magnetoresistance that contributes to MTEP as tunnelling-MTEP. Our results will stimulate the research work in the field of spin dependent thermal transport in ferromagnetic materials to further develop spin-Caloritronics.

  19. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  20. Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

    Science.gov (United States)

    You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei; Zhang, Han-Yue; Zhang, Wan-Ying; Zhang, Yi; Ye, Heng-Yun; Nakamura, Takayoshi; Xiong, Ren-Gen

    2017-04-01

    Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

  1. Structural and spectroscopic analysis of ex-situ annealed RF sputtered aluminium doped zinc oxide thin films

    Science.gov (United States)

    Otieno, Francis; Airo, Mildred; Erasmus, Rudolph M.; Billing, David G.; Quandt, Alexander; Wamwangi, Daniel

    2017-08-01

    Aluminium doped zinc oxide thin films are prepared by Radio Frequency magnetron sputtering in pure argon atmosphere at 100 W. The structural results reveal good film adhesion on a silicon substrate (001). The thin films were then subjected to heat treatment in a furnace under ambient air. The structural, morphological, and optical properties of the thin films as a function of deposition time and annealing temperatures have been investigated using Grazing incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy, and Scanning Electronic Microscopy. The photoluminescence properties of the annealed films showed significant changes in the optical properties attributed to mid gap defects. Annealing increases the crystallite size and the roughness of the film. The crystallinity of the films also improved as evident from the Raman and XRD studies.

  2. Mechanical properties and scratch resistance of filtered-arc-deposited titanium oxide thin films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Borrero-Lopez, Oscar, E-mail: oborlop@unex.es [Departamento de Ingenieria Mecanica, Energetica y de los Materiales, Universidad de Extremadura, 06071, Badajoz (Spain); School of Materials Science and Engineering, University of New South Wales NSW 2052, Sydney (Australia); Hoffman, Mark [School of Materials Science and Engineering, University of New South Wales NSW 2052, Sydney (Australia); Bendavid, Avi; Martin, Phil J. [CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield NSW 2070 (Australia)

    2011-09-01

    The mechanical properties and the scratch resistance of titanium oxide (TiO{sub 2}) thin films on a glass substrate have been investigated. Three films, with crystalline (rutile and anatase) and amorphous structures, were deposited by the filtered cathodic vacuum arc deposition technique on glass, and characterized by means of nanoindentation and scratch tests. The different damage modes (arc-like, longitudinal and channel cracks in the crystalline films; Hertzian cracks in the amorphous film) were assessed by means of optical and focused ion beam microscopy. In all cases, the deposition of the TiO{sub 2} film improved the contact-mechanical properties of uncoated glass. Crystalline films were found to possess a better combination of mechanical properties (i.e. elastic modulus up to 221 GPa, hardness up to 21 GPa, and fracture strength up to 3.6 GPa) than the amorphous film. However, under cyclic sliding contact above the critical fracture load, the amorphous film was found to withstand a higher number of cycles. The results are expected to provide useful insight for the design of optical coatings with improved contact-damage resistance.

  3. Enhancement of polar crystalline phase formation in transparent PVDF-CaF{sub 2} composite films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Goo; Ha, Jong-Wook, E-mail: jongwook@krict.re.kr; Sohn, Eun-Ho; Park, In Jun; Lee, Soo-Bok

    2016-12-30

    Highlights: • The crystalline phase in transparent PVDF-CaF{sub 2} composite films was investigated. • CaF{sub 2} promoted the formation of polar crystalline phases in PVDF matrix. • Ordered γ-phase was obtained by thermal treatment of as-cast films at the vicinity of its melting temperature. - Abstract: We consider the influence of calcium fluoride (CaF{sub 2}) nanoparticles on the crystalline phase formation of poly(vinylidene fluoride) (PVDF) for the first time. The transparent PVDF-CaF{sub 2} composite films were prepared by casting on PET substrates using N,N-dimethylacetamide (DMAc) as a solvent. It was found that CaF{sub 2} promoted the formation of polar crystalline phase of PVDF in composites, whereas nonpolar α-phase was dominant in the neat PVDF film prepared at the same condition. The portion of polar crystalline phase increased in proportional to the weight fraction of CaF{sub 2} in the composite films up to 10 wt%. Further addition of CaF{sub 2} suppressed completely the α-phase formation. Polar crystalline phase observed in as-cast composite films was a mixture of β- and γ-polymorph structures. It was also shown that much ordered γ-phase could be obtained through thermal treatment of as-cast PVDF-CaF{sub 2} composite film at the temperatures above the melting temperature of the composite films, but below that of γ-phase.

  4. Thin Film Evolution Over a Thin Porous Layer: Modeling a Tear Film on a Contact Lens

    Science.gov (United States)

    Anderson, Daniel; Nong, Kumnit

    2010-11-01

    We examine a mathematical model that describes the behavior of the pre-contact lens tear film of a human eye. Our work examines the effect of contact lens thickness and lens permeability and slip on the film dynamics. A mathematical model for the evolution of the tear film is derived using a lubrication approximation applied to the hydrodynamic equations of motion in the fluid film and the porous layer. The model is a nonlinear fourth order partial differential equation subject to boundary conditions and an initial condition for post-blink film evolution. We find that increasing the lens thickness, permeability and slip all contribute to an increase in the film thinning rate although for parameter values typical for contact lens wear these modifications are minor. The presence of the contact lens can, however, fundamentally change the nature of the rupture dynamics as the inclusion of the porous lens leads to rupture in finite time rather than infinite time.

  5. Nanostructuring on zinc phthalocyanine thin films for single-junction organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhary, Dhirendra K.; Kumar, Lokendra, E-mail: lokendrakr@allduniv.ac.in [Department of Physics, University of Allahabad, Allahabad-211 002 (India)

    2016-05-23

    Vertically aligned and random oriented crystalline molecular nanorods of organic semiconducting Zinc Phthalocyanine (ZnPc) have been grown on ITO coated glass substrate using solvent volatilization method. Interesting changes in surface morphology were observed under different solvent treatment. Vertically aligned nanorods of ZnPc thin film were observed in the films treated with acetone, where as the random oriented nanorods were observed in the films treated with chloroform. The X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) have been used for characterization of nanostructures. The optical properties of the nanorods have been investigated by UV-Vis. absorption spectroscopy.

  6. Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kirubaharan, A. Kamalan; Kuppusami, P., E-mail: pkigcar@gmail.com; Dharini, T.; Ramachandran, D. [Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai-600119 (India); Singh, Akash; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2015-06-24

    Yttria stabilized zirconia (10 mole % Y{sub 2}O{sub 3}) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 – 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ∼5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

  7. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  8. Gadolinium thin films as benchmark for magneto-caloric thin films

    Science.gov (United States)

    Helmich, Lars; Bartke, Marianne; Teichert, Niclas; Schleicher, Benjamin; Fähler, Sebastian; Hütten, Andreas

    2017-05-01

    We report on the preparation of Gadolinium thin films by means of sputter deposition on Silicon Oxide wafers. A series of samples with different buffer layers and various substrate temperatures has been produced. The film on an amorphous Tantalum buffer deposited at 773 K shows the highest increase of magnetization during the phase transition at the Curie temperature. Further detailed analysis of the magnetic properties has been conducted by VSM.

  9. Physical Properties of Thin Film Semiconducting Materials

    Science.gov (United States)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  10. Evidence of nanodomes in carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, S.; Laugier, M.T. [Material and Surface Science Institute (MSSI) and Department of Physics, University of Limerick, Limerick (Ireland)

    2004-01-01

    This article reports the synthesis of hard and conductive carbon nitride thin films with evidence of formation of nanodomes over a range of substrate temperature from 50 C to 550 C. The size of the nanodomes increases from 40-80 nm at room temperature to 200-400 nm at high temperature (550 C). Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 19 m{omega}cm were found for nanodomes of size 40-80 nm falling to 6 m{omega}cm for nanodomes of size 200-400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9-22 GPa and 100-168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  12. Collective Behavior of Amoebae in Thin Films

    Science.gov (United States)

    Bae, Albert

    2005-03-01

    We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (media with a mineral oil overlayer, and III. microfluidic chambers fabricated in PDMS (˜7um tall). We find greatly reduced, if not eliminated, cell on cell layering in the microfluidic system when compared to the wetting layer preparations. The ultrathin films reveal robust behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

  13. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  14. Low-Cost Detection of Thin Film Stress during Fabrication

    Science.gov (United States)

    Nabors, Sammy A.

    2015-01-01

    NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

  15. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  16. Structural phototransformation of WO{sub 3} thin films detected by photoacoustic analysis

    Energy Technology Data Exchange (ETDEWEB)

    Pacheco, Argelia Perez, E-mail: ekargy@hotmail.com [Universidad Nacional Autonoma de Mexico, Laboratorio de Fotofisica y Peliculas Delgadas-CCADET, Ciudad Universitaria, Coyoacan, A.P. 70-186, C.P. 04510, Mexico, D.F. (Mexico); Montes de Oca, C. Oliva; Castaneda-Guzman, R.; Garcia, A. Esparza [Universidad Nacional Autonoma de Mexico, Laboratorio de Fotofisica y Peliculas Delgadas-CCADET, Ciudad Universitaria, Coyoacan, A.P. 70-186, C.P. 04510, Mexico, D.F. (Mexico)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer The phototransformation of WO{sub 3} thin films were studied by photoacoustic technique. Black-Right-Pointing-Pointer The phase transition in WO{sub 3} thin films was induced by laser irradiation fluence. Black-Right-Pointing-Pointer The onset and end of the phototransformation in the thin films was identified. Black-Right-Pointing-Pointer The ablation threshold for each sample was identified. - Abstract: The photoacoustic technique (PA) was used to detect the phase transformation from amorphous to crystalline state of tungsten oxide (WO{sub 3}) thin films induced by UV pulsed laser radiation at low energy (<1.5 mJ). The evolution of photoacoustic signal was studied by a correlation analysis, comparing successive signals at fluences ranging from 0 to 20 mJ/cm{sup 2}. In this interval, it was possible to observe structural changes and the ablation threshold in films due to incident laser fluence effect. Thin films of WO{sub 3} were deposited by DC reactive magnetron sputtering over glass substrates at different deposition times. The results obtained by correlation analysis were compared with Raman spectroscopy data.

  17. Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

    Directory of Open Access Journals (Sweden)

    Min-Yen Yeh

    2016-06-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu, zinc (Zn, tin (Sn, and sulfur (S in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2, zinc chloride (ZnCl2, tin chloride (SnCl2, and thiourea (SC(NH22, whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD, scanning electron microscopy (SEM, energy-dispersive X-ray spectroscopy (EDXS, Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF = 66%.

  18. Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology.

    Science.gov (United States)

    Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

    2016-06-29

    Cu₂ZnSnS₄ (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl₂), zinc chloride (ZnCl₂), tin chloride (SnCl₂), and thiourea (SC(NH₂)₂), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm², and fill-factor (FF) = 66%.

  19. Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

    Science.gov (United States)

    Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

    2016-01-01

    Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF) = 66%. PMID:28773647

  20. Thin chitosan films containing super-paramagnetic nanoparticles with contrasting capability in magnetic resonance imaging.

    Science.gov (United States)

    Farjadian, Fatemeh; Moradi, Sahar; Hosseini, Majid

    2017-03-01

    Magnetic nanoparticles have found application as MRI contrasting agents. Herein, chitosan thin films containing super-paramagnetic iron oxide nanoparticles (SPIONs) are evaluated in magnetic resonance imaging (MRI). To determine their contrasting capability, super-paramagnetic nanoparticles coated with citrate (SPIONs-cit) were synthesized. Then, chitosan thin films with different concentrations of SPIONs-cit were prepared and their MRI data (i.e., r 2 and r 2*) was evaluated in an aqueous medium. The synthesized SPIONs-cit and chitosan/SPIONs-cit films were characterized by FTIR, EDX, XRD as well as VSM with the morphology evaluated by SEM and AFM. The nanoparticle sizes and distribution confirmed well-defined nanoparticles and thin films formation along with high contrasting capability in MRI. Images revealed well-dispersed uniform nanoparticles, averaging 10 nm in size. SPIONs-cit's hydrodynamic size averaged 23 nm in diameter. The crystallinity obeyed a chitosan and SPIONs pattern. The in vitro cellular assay of thin films with a novel route was performed within Hek293 cell lines showing that thin films can be biocompatible.

  1. Energetic condensation growth of Nb thin films

    Directory of Open Access Journals (Sweden)

    M. Krishnan

    2012-03-01

    Full Text Available This paper describes energetic condensation growth of Nb films using a cathodic arc plasma, whose 60–120 eV ions penetrate a few monolayers into the substrate and enable sufficient surface mobility to ensure that the lowest energy state (crystalline structure with minimal defects is accessible to the film. Heteroepitaxial films of Nb were grown on a-plane sapphire and MgO crystals with good superconducting properties and crystal size (10  mm×20  mm limited only by substrate size. The substrates were heated to temperatures of up to 700°C and coated at 125°C, 300°C, 500°C, and 700°C. Film thickness was varied from ∼0.25  μm to >3  μm. Residual resistivity ratio (⟨RRR⟩ values (up to a record ⟨RRR⟩=587 on MgO and ⟨RRR⟩=328 on a-sapphire depend strongly on substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that RRR increases as the crystal structure of the Nb film becomes more ordered, consistent with fewer defects and, hence, longer electron mean-free path. A transition from Nb(110 to Nb(100 orientation on the MgO(100 lattice occurs at higher temperatures. This transition is discussed in light of substrate heating and energetic condensation physics. Electron backscattered diffraction and scanning electron microscope images complement the XRD data.

  2. Characterization of photon recycling in thin crystalline GaAs light emitting diodes

    Science.gov (United States)

    Patkar, M. P.; Lundstrom, M. S.; Melloch, M. R.

    1995-08-01

    Gallium arsenide light emitting diodes (LEDs) were fabricated using molecular beam epitaxial films on GaAs substrates and removed by epitaxial lift-off (ELO). Lifted off devices were then mounted on a Si wafer using a Pd/Au/Cr contact layer, which also served as a back surface reflector. Devices were characterized by electrical and optical measurements, and the results for devices on the GaAs substrate were compared to those for ELO devices. ELO LEDs coated with a ZnS/MgF2 antireflection coating exhibited an optical output that was up to six times that of LEDs on GaAs substrates. At the same time, the measured current-voltage characteristics of the ELO devices displayed a lower n=1 current component. ELO LEDs with efficiencies up to 12.5% were realized. We attribute these results to photon recycling enhanced by the back-surface reflector in the ELO LEDs. The luminescence versus current and current versus voltage characteristics of the LEDs were analyzed to obtain the nonradiative minority carrier lifetimes and the photon recycling factors. The results demonstrate that the measured characteristics are well described by photon recycling theory. ELO LEDs may prove useful for characterizing recombination processes in LEDs, and thin-crystalline structures could provide substantial efficiency enhancements for LEDs and solar cells.

  3. Influence of the substrate on the morphological evolution of gold thin films during solid-state dewetting

    Energy Technology Data Exchange (ETDEWEB)

    Nsimama, Patrick D. [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Dar Es Salaam Institute of Technology, P.O. Box 2958, Dar Es Salaam (Tanzania, United Republic of); Herz, Andreas; Wang, Dong [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Schaaf, Peter, E-mail: peter.schaaf@tu-ilmenau.de [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany)

    2016-12-01

    Highlights: • Dewetting of thin gold films is faster on TiO{sub 2} than on SiO{sub 2}. • Dewetting of thin gold films is faster on amorphous TiO{sub 2} than on crystalline TiO{sub 2}. • The kinetics is attributed to the energy of adhesion. • The morphology of thin Au films deposited on TiO{sub 2} substrates is different to those deposited on SiO{sub 2} substrates. • The dewetting activation energy of Au films deposited on crystalline substrates was higher than the activation energy of Au nanofilms deposited on amorphous TiO{sub 2} substrates. - Abstract: The evolution of electron-beam evaporated Au thin films deposited on crystalline TiO{sub 2} (c-TiO{sub 2}) and amorphous TiO{sub 2} (a-TiO{sub 2}) as well as amorphous SiO{sub 2} substrates are investigated. The kinetic of dewetting is clearly dependent on the type of substrate and is faster on TiO{sub 2} substrates than on SiO{sub 2} substrates. This difference can result from the difference in adhesion energy. Furthermore, the kinetic of dewetting is faster on a-TiO{sub 2} than on c-TiO{sub 2}, possibly due to the crystallization of TiO{sub 2} during annealing induced dewetting process. The morphologies of dewetted Au films deposited on crystalline TiO{sub 2} are characterized by branched holes. The XRD patterns of the Au films deposited on TiO{sub 2} substrates constituted peaks from both metallic Au and anatase TiO{sub 2}. The activation energy of Au films deposited on crystalline TiO{sub 2} substrates was higher than that that of the films deposited on amorphous TiO{sub 2} substrates.

  4. Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Patric Alfons

    2007-07-20

    A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

  5. Deposition, characterization and optimization of zinc oxide thin film for piezoelectric cantilevers

    Science.gov (United States)

    Wang, Peihong; Du, Hejun; Shen, Shengnan; Zhang, Mingsheng; Liu, Bo

    2012-10-01

    In this work, piezoelectric zinc oxide (ZnO) thin films are deposited under different deposition conditions using RF magnetron sputtering method. The influence of RF power, O2/(Ar + O2) gas ratio and sputtering pressure on the deposition rate, crystalline structures, surface roughness and composition purity of ZnO film are investigated by X-ray Diffractometer (XRD), scanning electron microscopy (SEM), atom force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS). All the fabricated ZnO films have a preferred ZnO(0 0 2) orientation. When the gas ratio of O2/(Ar + O2) is 25% and the working pressure is 0.8 Pa, the grain size in the ZnO thin film is of the largest and the ZnO film has a very smooth and dense surface. The SEM cross-sectional image of the ZnO film confirms that the ZnO thin film has a columnar structure and the c-axis is perpendicular to the substrate surface. The EDS analysis shows the ZnO film has only Zn and O elements. Different ZnO film based piezoelectric micro cantilevers are fabricated using micromachining techniques and the dynamic response of these piezoelectric cantilevers are measured by laser Doppler vibrometer (LDV). The tested results from LDV show that the deflection of the piezoelectric cantilever is linear with the driving voltage. The transverse piezoelectric constant d31 of the ZnO thin film deposited under best conditions is calculated as -3.21 pC/N by the LDV data. This value is higher than other published works. In future, these ZnO thin films will be used in our ongoing project for the design, simulation and fabrication of smart slider with a built-in ZnO sensor/actuator in the hard disk drives.

  6. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  7. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  8. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob, E-mail: yongspark2011@gmail.com [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, 446-701 (Korea, Republic of); Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of); Kim, Han-Ki [Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of)

    2011-09-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I{sub D}-V{sub D}), drain current-gate voltage (I{sub D}-V{sub G}), threshold voltage (V{sub T}), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10{sup -3} {Omega}.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm{sup 2}/V s and the on/off ratio of {approx} 10{sup 5}. Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  9. Review of the fundamentals of thin-film growth.

    Science.gov (United States)

    Kaiser, Norbert

    2002-06-01

    The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.

  10. Growth and characterization of CdS thin films on polymer substrates for photovoltaic applications.

    Science.gov (United States)

    Park, Yongseob; Kim, Eung Kwon; Lee, Suho; Lee, Jaehyeong

    2014-05-01

    In this work, cadmium sulfide (CdS) films were deposited on flexible polymer substrates such as polycarbonate (PC) and polyethylene terephthalate (PET). The r.f. magnetron sputtering, which is cost-effective scalable technique, was used for the film deposition. The structural and optical properties of the films grown at different sputtering pressures were investigated. When the CdS film was deposited at lower pressure, the crystallinity and the preferred orientation toward c-axis in hexagonal phase was improved. However, the optical transmittance was reduced as the sputtering pressure was decreased. Compared with the glass substrate, CdS films grown on polymer substrates were exhibited some wore structural and optical characteristics. CdTe thin film solar cell applied to sputtered CdS as a window layer showed a maximum efficiency of 11.6%.

  11. The structure study of thin boron and silicon carbonitride films by diffraction of synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fainer, N.I. E-mail: nadezhda@che.nsk.su; Kosinova, M.L.; Yurjev, G.S.; Maximovski, E.A.; Rumyantsev, Yu.M.; Asanov, I.P

    2000-06-21

    Crystalline structure and phase composition of thin boron and silicon carbonitride films were investigated using diffraction of synchrotron radiation (SR). These films were synthesized by RPECVD using nontraditional volatile precursors. The diffraction measurements were performed at the station 'Anomalous Scattering', existed at the second canal of colliding electron-positron beam accelerator VEPP-3 of the Siberian center of SR (Institute of Nuclear Physics of SB RAS, Novosibirsk, Russia). The formation of polycrystalline novel phase not coinciding with known phases of boron carbide and boron nitride was observed in boron carbonitride films by diffraction experiments. The boron carbonitride films are not a mixture of boron carbide and boron nitride phases. We propose that these films are probably BCN phase. The X-ray diffraction and RHEED investigations revealed fine crystals of hexagonal Si{sub 3}N{sub 4} phase in amorphous matrix of silicon carbonitride films.

  12. The structure study of thin boron and silicon carbonitride films by diffraction of synchrotron radiation

    Science.gov (United States)

    Fainer, N. I.; Kosinova, M. L.; Yurjev, G. S.; Maximovski, E. A.; Rumyantsev, Yu. M.; Asanov, I. P.

    2000-06-01

    Crystalline structure and phase composition of thin boron and silicon carbonitride films were investigated using diffraction of synchrotron radiation (SR). These films were synthesized by RPECVD using nontraditional volatile precursors. The diffraction measurements were performed at the station "Anomalous Scattering", existed at the second canal of colliding electron-positron beam accelerator VEPP-3 of the Siberian center of SR (Institute of Nuclear Physics of SB RAS, Novosibirsk, Russia). The formation of polycrystalline novel phase not coinciding with known phases of boron carbide and boron nitride was observed in boron carbonitride films by diffraction experiments. The boron carbonitride films are not a mixture of boron carbide and boron nitride phases. We propose that these films are probably BCN phase. The X-ray diffraction and RHEED investigations revealed fine crystals of hexagonal Si 3N 4 phase in amorphous matrix of silicon carbonitride films.

  13. TiO2 thin film growth using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M.I.B.

    2001-01-01

    Full Text Available Titanium oxide (TiO2 thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C, oxygen flow (7,0 L/min and substrate temperature (400 °C. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and visible and ultra-violet region spectroscopy (UV-Vis. The films deposited on Si (100 substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6.

  14. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  15. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  16. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  17. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  18. Role of asphaltenes in stabilizing thin liquid emulsion films.

    Science.gov (United States)

    Tchoukov, Plamen; Yang, Fan; Xu, Zhenghe; Dabros, Tadeusz; Czarnecki, Jan; Sjöblom, Johan

    2014-03-25

    Drainage kinetics, thickness, and stability of water-in-oil thin liquid emulsion films obtained from asphaltenes, heavy oil (bitumen), and deasphalted heavy oil (maltenes) diluted in toluene are studied. The results show that asphaltenes stabilize thin organic liquid films at much lower concentrations than maltenes and bitumen. The drainage of thin organic liquid films containing asphaltenes is significantly slower than the drainage of the films containing maltenes and bitumen. The films stabilized by asphaltenes are much thicker (40-90 nm) than those stabilized by maltenes (∼10 nm). Such significant variation in the film properties points to different stabilization mechanisms of thin organic liquid films. Apparent aging effects, including gradual increase of film thickness, rigidity of oil/water interface, and formation of submicrometer size aggregates, were observed for thin organic liquid films containing asphaltenes. No aging effects were observed for films containing maltenes and bitumen in toluene. The increasing stability and lower drainage dynamics of asphaltene-containing thin liquid films are attributed to specific ability of asphaltenes to self-assemble and form 3D network in the film. The characteristic length of stable films is well beyond the size of single asphaltene molecules, nanoaggregates, or even clusters of nanoaggregates reported in the literature. Buildup of such 3D structure modifies the rheological properties of the liquid film to be non-Newtonian with yield stress (gel like). Formation of such network structure appears to be responsible for the slower drainage of thin asphaltenes in toluene liquid films. The yield stress of liquid film as small as ∼10(-2) Pa is sufficient to stop the drainage before the film reaches the critical thickness at which film rupture occurs.

  19. Levan nanostructured thin films by MAPLE assembling.

    Science.gov (United States)

    Sima, Felix; Mutlu, Esra Cansever; Eroglu, Mehmet S; Sima, Livia E; Serban, Natalia; Ristoscu, Carmen; Petrescu, Stefana M; Oner, Ebru Toksoy; Mihailescu, Ion N

    2011-06-13

    Synthesis of nanostructured thin films of pure and oxidized levan exopolysaccharide by matrix-assisted pulsed laser evaporation is reported. Solutions of pure exopolysaccharides in dimethyl sulfoxide were frozen in liquid nitrogen to obtain solid cryogenic pellets that have been used as targets in pulsed laser evaporation experiments with a KrF* excimer source. The expulsed material was collected and assembled onto glass slides and Si wafers. The contact angle studies evidenced a higher hydrophilic behavior in the case of oxidized levan structures because of the presence of acidic aldehyde-hydrogen bonds of the coating formed after oxidation. The obtained films preserved the base material composition as confirmed by Fourier transform infrared spectroscopy. They were compact with high specific surface areas, as demonstrated by scanning electron and atomic force microscopy investigations. In vitro colorimetric assays revealed a high potential for cell proliferation for all coatings with certain predominance for oxidized levan.

  20. Modelling the tribology of thin film interfaces

    CERN Document Server

    Zugic, R

    2000-01-01

    substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium molecular dynamics computer simulations. The aim of this work is to deri...

  1. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    Science.gov (United States)

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-09

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping.

  2. Tension Tests of Copper Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  3. Temperature-dependent microstructural evolution of Ti{sub 2}AlN thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Jin, Hongmei, E-mail: jinhm@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Sullivan, Michael B. [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Wang, Shi Jie, E-mail: sj-wang@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

    2016-04-15

    Graphical abstract: - Highlights: • We investigate microstructural evolution of Ti{sub 2}AlN MAX thin films with temperature. • The film forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C. • The film nucleates into polycrystalline Ti{sub 2}AlN M{sub n+1}AX{sub n} phases at 600 °C. • The film transforms into a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film at 750 °C. • The mechanisms behind Ti{sub 2}AlN phase transformation with temperature are discussed. - Abstract: Ti{sub 2}AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti{sub 2}Al compound target in a mixed N{sub 2}/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti{sub 2}AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  4. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  5. Thin Polymer Films Containing Carbon Nanostructures

    Science.gov (United States)

    Paszkiewicz, S.; Piesowicz, E.; Irska, I.; Roslaniec, Z.; Szymczyk, A.; Pawelec, I.

    2016-05-01

    Within the framework of the presented paper, the research experiments were conducted on the preparation and characterization of polymer thin films containing carbon nanotubes, graphene derivatives and hybrid systems of both CNTs/graphene derivatives, in which condensation polymers constituted the matrix. The use of in situ synthesis allowed to obtain nanocomposites with a high degree of homogeneity, which is a key issue for further industrial applications, while the analysis of the physical properties of the obtained materials showed effect of the addition of carbon nanotubes and graphene derivatives on their structure, barrier properties and thermal and electrical conductivity.

  6. Birefringent thin films and polarizing elements

    CERN Document Server

    Hodgkinson, Ian J

    1997-01-01

    This book describes the propagation of light in biaxial media, the properties of biaxial thin films, and applications such as birefringent filters for tuning the wavelength of dye lasers.A novel feature of the first part is the parallel treatment of Stokes, Jones, and Berreman matrix formalisms in a chapter-by-chapter development of wave equations, basis vectors, transfer matrices, reflection and transmission equations, and guided waves. Computational tools for MATLAB are included.The second part focuses on an emerging planar technology in which anisotropic microstructures are formed by obliqu

  7. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  8. Slip effects in polymer thin films

    OpenAIRE

    Baeumchen, O.; Jacobs, K.

    2009-01-01

    Probing the fluid dynamics of thin films is an excellent tool to study the solid/liquid boundary condition. There is no need for external stimulation or pumping of the liquid due to the fact that the dewetting process, an internal mechanism, acts as a driving force for liquid flow. Viscous dissipation within the liquid and slippage balance interfacial forces. Thereby, friction at the solid/liquid interface plays a key role towards the flow dynamics of the liquid. Probing the temporal and spat...

  9. Thin-Film Photovoltaic Device Fabrication

    Science.gov (United States)

    Scofield, John H.

    2003-01-01

    This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

  10. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  11. Interface Effects in Perovskite Thin Films

    Science.gov (United States)

    Lepetit, Marie-Bernadette; Mercey, Bernard; Simon, Charles

    2012-02-01

    The control of matter properties (transport, magnetic, dielectric,…) using synthesis as thin films is strongly hindered by the lack of reliable theories, able to guide the design of new systems, through the understanding of the interface effects and of the way the substrate constraints are imposed on the material. The present Letter analyzes the energetic contributions at the interfaces, and proposes a model describing the microscopic mechanisms governing the interactions at an epitaxial interface between a manganite and another transition metal oxide in perovskite structure (as for instance SrTiO3). The model is checked against experimental results and literature analysis.

  12. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  13. Structure and Morphology Control in Thin Films of Conjugated Polymers for an Improved Charge Transport

    Directory of Open Access Journals (Sweden)

    Haiyang Wang

    2013-11-01

    Full Text Available The morphological and structural features of the conjugated polymer films play an important role in the charge transport and the final performance of organic optoelectronics devices [such as organic thin-film transistor (OTFT and organic photovoltaic cell (OPV, etc.] in terms of crystallinity, packing of polymer chains and connection between crystal domains. This review will discuss how the conjugated polymer solidify into, for instance, thin-film structures, and how to control the molecular arrangement of such functional polymer architectures by controlling the polymer chain rigidity, polymer solution aggregation, suitable processing procedures, etc. These basic elements in intrinsic properties and processing strategy described here would be helpful to understand the correlation between morphology and charge transport properties and guide the preparation of efficient functional conjugated polymer films correspondingly.

  14. Molecular orientation in soft matter thin films studied by resonant soft X-ray reflectivity

    Energy Technology Data Exchange (ETDEWEB)

    Mezger, Markus; Jerome, Blandine; Kortright, Jeffrey B.; Valvidares, Manuel; Gullikson, Eric; Giglia, Angelo; Mahne, Nicola; Nannarone, Stefano

    2011-01-12

    We present a technique to study depth profiles of molecular orientation in soft matter thin films with nanometer resolution. The method is based on dichroism in resonant soft X-ray reflectivity using linear s- and p-polarization. It combines the chemical sensitivity of Near-Edge X-ray Absorption Fine Structure spectroscopy to specific molecular bonds and their orientation relative to the polarization of the incident beam with the precise depth profiling capability of X-ray reflectivity. We demonstrate these capabilities on side chain liquid crystalline polymer thin films with soft X-ray reflectivity data at the carbon K edge. Optical constants of the anisotropic refractive index ellipsoid were obtained from a quantitative analysis using the Berreman formalism. For films up to 50 nm thickness we find that the degree of orientation of the long axis exhibits no depth variation and isindependent of the film thickness.

  15. Pulsed laser deposition and characterization of conductive RuO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iembo, A.; Fuso, F.; Arimondo, E. [Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Universita di Pisa, Piazza Torricelli 2, I-56126 Pisa (Italy); Ciofi, C.; Pennelli, G. [Dipartimento di Ingegneria dell`Informazione: Elettronica, Informatica, Telecomunicazioni, Universita di Pisa, via Diotisalvi 2, I-56126 Pisa (Italy); Curro, G.M.; Neri, F.; Allegrini, M. [Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Universita di Messina, Salita Sperone 31, I-98166 Messina (Italy)]|[Istituto Nazionale per la Fisica della Materia, Unita di Messina, Messina (Italy)

    1997-06-01

    RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Research Society.}

  16. Gas sensing applications of phthalocyanine thin films

    Science.gov (United States)

    Starke, Thomas

    This thesis reports an investigation into the NO2 sensing properties of copper phthalocyanine (CuPc) thin films at room temperature in air. The gas sensing properties of the CuPc films were investigated using electrical conductivity and surface acoustic wave (SAW) sensing devices. Conductivity and SAW sensors were employed to detect changes of the film properties upon NO2 exposure in electrical conductivity and mass loading respectively. Initially, the response of electrical conductivity and SAW sensors incorporating an untreated layer of CuPc was investigated. Laser illumination of the films during the sensing experiments was found to have a significant effect on the mass loading response but little effect on the change in electrical conductivity. From these experiments it was suggested that NO2 adsorption on CuPc may be dominated by two different mechanisms, surface adsorption and bulk diffusion. It was also suggested that a reduction of one of these components would lead to a more controllable response. In order to minimise the effect of bulk diffusion, some of the CuPc films were doped with NO2 after deposition so filling the strongly bound bulk adsorption sites. In other devices, cooling of the CuPc layer in liquid nitrogen was used after deposition to change the surface structure in order to facilitate bulk diffusion. It was shown that these post-deposition treatment significantly changed the response characteristics of the CuPc film. Response kinetics of the experiments were analysed using the Langmuir and Elovich adsorption models, a method was suggested to determine the concentration of NO2 within the first few minutes of exposure using the value for the maximum rate of current change. A good correlation between this value and the concentration was found.

  17. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films ...

  18. Methods for producing thin film charge selective transport layers

    Energy Technology Data Exchange (ETDEWEB)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  19. Solvent-Assisted Gel Printing for Micropatterning Thin Organic-Inorganic Hybrid Perovskite Films.

    Science.gov (United States)

    Jeong, Beomjin; Hwang, Ihn; Cho, Sung Hwan; Kim, Eui Hyuk; Cha, Soonyoung; Lee, Jinseong; Kang, Han Sol; Cho, Suk Man; Choi, Hyunyong; Park, Cheolmin

    2016-09-27

    While tremendous efforts have been made for developing thin perovskite films suitable for a variety of potential photoelectric applications such as solar cells, field-effect transistors, and photodetectors, only a few works focus on the micropatterning of a perovskite film which is one of the most critical issues for large area and uniform microarrays of perovskite-based devices. Here we demonstrate a simple but robust method of micropatterning a thin perovskite film with controlled crystalline structure which guarantees to preserve its intrinsic photoelectric properties. A variety of micropatterns of a perovskite film are fabricated by either microimprinting or transfer-printing a thin spin-coated precursor film in soft-gel state with a topographically prepatterned elastomeric poly(dimethylsiloxane) (PDMS) mold, followed by thermal treatment for complete conversion of the precursor film to a perovskite one. The key materials development of our solvent-assisted gel printing is to prepare a thin precursor film with a high-boiling temperature solvent, dimethyl sulfoxide. The residual solvent in the precursor gel film makes the film moldable upon microprinting with a patterned PDMS mold, leading to various perovskite micropatterns in resolution of a few micrometers over a large area. Our nondestructive micropatterning process does not harm the intrinsic photoelectric properties of a perovskite film, which allows for realizing arrays of parallel-type photodetectors containing micropatterns of a perovskite film with reliable photoconduction performance. The facile transfer of a micropatterned soft-gel precursor film on other substrates including mechanically flexible plastics can further broaden its applications to flexible photoelectric systems.

  20. SnS thin films prepared by H2S-free process and its p-type thin film transistor

    Science.gov (United States)

    Ran, Fan-Yong; Xiao, Zewen; Hiramatsu, Hidenori; Ide, Keisuke; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    Polycrystalline SnS thin films were fabricated by a H2S-free process combing pulsed laser deposition at room temperature and post-deposition thermal annealing in Ar. Thermal annealing improved the crystalline quality of the SnS films and the best films were obtained by 400 °C annealing. The obtained SnS films exhibited p-type conduction with the highest Hall mobility of 28 cm2/(V ṡ s) and the carrier densities of 1.5 × 1015 - 1.8 × 1016 cm-3. The SnS TFT exhibited p-type operation with a field effect mobility and an on-off drain current ratio of 0.4 cm2/(V ṡ s) and 20, respectively.

  1. Effect of iron doping on structural and optical properties of TiO2 thin film by sol–gel routed spin coating technique

    Directory of Open Access Journals (Sweden)

    Stephen Lourduraj

    2017-08-01

    Full Text Available Thin films of iron (Fe-doped titanium dioxide (Fe:TiO2 were prepared by sol–gel spin coating technique and further calcined at 450∘C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, ultraviolet–visible spectroscopy (UV–vis and atomic force microscopic (AFM techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.

  2. Crystallization in diblock copolymer thin films at different degrees of supercooling

    DEFF Research Database (Denmark)

    Darko, C.; Botiz, I.; Reiter, G.

    2009-01-01

    and intermediate degrees of supercooling, but of submicrometer size for strong supercooling. Using grazing-incidence wide-angle x-ray scattering, we could determine the grain orientation distribution function which shows that the chain stems are perpendicular to the lamellae at low supercooling, but tilted......The crystalline structures in thin films of polystyrene-b-poly(ethylene oxide) (PS-b-PEO) diblock copolymers were studied in dependence on the degree of supercooling. Atomic force microscopy showed that the crystalline domains (lamellae) consist of grains, which are macroscopic at low...

  3. Low-field microwave absorption in pulse laser deposited FeSi thin film

    Energy Technology Data Exchange (ETDEWEB)

    Gavi, H. [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa); Ngom, B.D. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Beye, A.C. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Strydom, A.M. [Department of Physics, University of Johannesburg, Johannesburg 2006 (South Africa); Srinivasu, V.V., E-mail: vallavs@unisa.ac.za [Department of Physics, University of South Africa, Pretoria 0003 (South Africa); Chaker, M. [Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa)

    2012-03-15

    Low field microwave absorption (LFMA) measurements at 9.4 GHz (X-band), were carried out on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. The LFMA properties of the films were investigated as a function of DC field, temperature, microwave power and the orientation of DC field with respect to the film surface. The LFMA signal is very strong when the DC field is parallel to the film surface and vanishes at higher angles. The LFMA signal strength increases as the microwave power is increased. The LFMA signal disappears around 340 K, which can be attributed to the disappearance of ferromagnetic state well above room temperature in these films. We believe that domain structure evolution in low fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of the LFMA observed in these films. The observation of LFMA opens the possibility of the FeSi films to be used as low magnetic field sensors in the microwave and rf frequency regions. - Highlights: Black-Right-Pointing-Pointer B20 crystalline FeSi thin film shows low field microwave absorption. Black-Right-Pointing-Pointer Usual ferromagnic resonance typical of magnetic materials is observed in FeSi film. Black-Right-Pointing-Pointer FeSi film can be used for low magnetic field sensors.

  4. Growth and characterization of Sc-doped EuO thin films

    Science.gov (United States)

    Altendorf, S. G.; Reisner, A.; Chang, C. F.; Hollmann, N.; Rata, A. D.; Tjeng, L. H.

    2014-02-01

    The preparation of 3d-transition metal-doped EuO thin films by molecular beam epitaxy is investigated using the example of Sc doping. The Sc-doped EuO samples display a good crystalline structure, despite the relatively small ionic radius of the dopant. The Sc doping leads to an enhancement of the Curie temperature to up to 125 K, remarkably similar to previous observations on lanthanide-doped EuO.

  5. Reactive sputtering methods used for the preparation of high critical temperature superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bruyere, J.C.; Escribe-Filippini, C.; Marcus, J.; Reydet, P.L.; Cabaret, B.

    1988-06-01

    Among the synthesis methods of metallic oxides, the reactive sputtering methods seem to be the most attractive, with the possibilities to get the right composition and even the suitable crystalline structure. In this paper, we discuss many specific chemical and physical reactions which appear during the deposition process. Finally, we show preliminary results obtained in our laboratory in the preparation of high critical temperature superconducting thin films.

  6. Extrinsic scaling effects on the dielectric response of ferroelectric thin films

    Science.gov (United States)

    Ihlefeld, Jon F.; Vodnick, Aaron M.; Baker, Shefford P.; Borland, William J.; Maria, Jon-Paul

    2008-04-01

    Scaling effects in polycrystalline ferroelectric thin films were investigated by preparing barium titanate in a manner that maintained constant composition and film thickness while allowing systematically increased grain size and crystalline coherence. The average grain dimensions ranged from 60to110nm, and temperature dependence of permittivity analysis revealed diffuse phase transitions in all cases. Maximum permittivity values ranged from 380 to 2040 for the smallest to largest sizes, respectively. Dielectric hysteresis is evident at room temperature for all materials, indicating stability of the ferroelectric phase. Comparison of permittivity values at high electric fields indicates that the intrinsic dielectric response is identical and microstructural artifacts likely have a minimal influence on film properties across the sample series. Permittivity values, however, are substantially smaller than those reported for bulk material with similar grain dimensions. X-ray line broadening measurements were taken for the grain size series at the Cornell High Energy Synchrotron Source (CHESS), which revealed coherent scattering dimensions substantially smaller than the microscopy-determined grain size. Collectively these data sets suggest that permittivity values are influenced not only by grain size but also by the mosaic structure existing within each grain, and that thin film thermal budgets, which are several hundred degrees lower than used for bulk processing, are responsible for reduced crystalline coherence, and likely the origin of degraded electromechanical response in thin film ferroelectrics.

  7. Thin-film Rechargeable Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

    1993-11-01

    Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

  8. Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

    Energy Technology Data Exchange (ETDEWEB)

    Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reeja-Jayan, B. [Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States); De la Rosa, E. [Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico); Ortiz-Mendez, U. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reyes-Betanzo, C. [Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico); Cruz-Silva, R. [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico); Jose-Yacaman, M. [Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)

    2010-03-15

    In this work patterned ZnO films were prepared at room-temperature by deposition of {approx}5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation ({lambda} = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

  9. Nanostructured CuO Thin Films Prepared through Sputtering for Solar Selective Absorbers

    Directory of Open Access Journals (Sweden)

    Senthuran Karthick Kumar

    2013-01-01

    Full Text Available Nanostructured cupric oxide (CuO thin films have been deposited on copper (Cu substrates at different substrate temperatures and oxygen to argon gas ratios through direct current (DC reactive magnetron sputtering. The deposited CuO thin films are characterized by using X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, profilometry, and spectrophotometry techniques. The crystalline phases, morphology, optical properties, and photothermal conversion efficiency of the CuO thin films are found to be significantly influenced by the change in substrate temperature and oxygen to argon gas ratio. The variations in the substrate temperature and oxygen to argon gas ratio have induced changes in Cu+ and Cu2+ concentrations of the CuO thin films that result in corresponding changes in their optical properties. The CuO thin film prepared at a substrate temperature of 30°C and O2 to Ar gas ratio of 1 : 1 has exhibited high absorptance and low emittance; thus, it could be used as a solar selective absorber in solar thermal gadgets.

  10. Thin films with chemically graded functionality based on fluorine polymers and stainless steel.

    Science.gov (United States)

    Piedade, A P; Nunes, J; Vieira, M T

    2008-07-01

    Thin films of stainless steel and poly(tetrafluoroethylene) were co-deposited, by radiofrequency magnetron sputtering, in an inert atmosphere in order to produce a functionally graded material as a coating on a traditional biomaterial, where non-ferromagnetic characteristics and improved wettability must be ensured. These thin films are intended to modify the surface of SS316L used in stents, where the bulk/thin film couple should be regarded as a single material. This requires excellent adhesion of the coating to the substrate. All coatings were deposited with an average thickness of 500 nm. The chemical and phase characterization of the surface revealed that, with the increase in F content, the thin film evolves from a ferritic phase (alpha) to an amorphous phase with dispersion of a new crystalline ceramic phase (FeF(2)). For intermediate F content values, an austenitic (111) phase (gamma) was present. Bearing in mind the envisaged application, the best results were attained for thin films with a fluorine content between 10 and 20 at.%.

  11. Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

    Science.gov (United States)

    Selman, Abbas M.; Mahdi, M. A.; Hassan, Z.

    2017-10-01

    Cuprous oxide (Cu2O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu2O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu2O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu2O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu2O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu2O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu2O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm2 of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu2O photodetector as an affordable photosensor in the future.

  12. Bioglass thin films for biomimetic implants

    Energy Technology Data Exchange (ETDEWEB)

    Berbecaru, C. [Bucharest University, Faculty of Physics, Atomistilor nr. 405, P.O. Box MG 11, Bucharest-Magurele (Romania)], E-mail: berbecaru2ciceron@yahoo.com; Alexandru, H.V. [Bucharest University, Faculty of Physics, Atomistilor nr. 405, P.O. Box MG 11, Bucharest-Magurele (Romania)], E-mail: horia@infim.ro; Ianculescu, Adelina [Politehnica University of Bucharest, Splaiul Independentei 313, Bucharest 060042 (Romania)], E-mail: a_ianculescu@yahoo.com; Popescu, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 1, P.O. Box MG 6, Bucharest-Magurele 76900 (Romania)], E-mail: andrei.popescu@inflpr.ro; Socol, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 1, P.O. Box MG 6, Bucharest-Magurele 76900 (Romania)], E-mail: gabriel.socol@inflpr.ro; Sima, F. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 1, P.O. Box MG 6, Bucharest-Magurele 76900 (Romania)], E-mail: felix.sima@inflpr.ro; Mihailescu, Ion [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 1, P.O. Box MG 6, Bucharest-Magurele 76900 (Romania)], E-mail: ion.mihailescu@inflpr.ro

    2009-03-01

    Pulsed laser deposition (PLD) method was used to obtain bioglass (BG) thin film coatings on titanium substrates. An UV excimer laser KrF* ({lambda} = 248 nm, {tau} = 25 ns) was used for the multi-pulse irradiation of the BG targets with 57 or 61 wt.% SiO{sub 2} content (and Na{sub 2}O-K{sub 2}O-CaO-MgO-P{sub 2}O{sub 5} oxides). The depositions were performed in oxygen atmosphere at 13 Pa and for substrates temperature of 400 deg. C. The PLD films displayed typical BG of 2-5 {mu}m particulates nucleated on the film surface or embedded in. The PLD films stoichiometry was found to be the same as the targets. XRD spectra have shown, the glass coatings obtained, had an amorphous structure. One set of samples, deposited in the same conditions, were dipped in simulated body fluids (SBFs) and subsequently extracted one by one after several time intervals 1, 3, 7, 14 and 21 days. After washing in deionized water and drying, the surface morphology of the samples and theirs composition were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), IR spectroscopy (FTIR) and energy dispersive X-ray analysis (EDX). After 3-7 days the Si content substantially decreases in the coatings and PO{sub 4}{sup 3-} maxima start to increase in FTIR spectra. The XRD spectra also confirm this evolution. After 14-21 days the XRD peaks show a crystallized fraction of the carbonated hydroxyapatite (HAP). The SEM micrographs show also significant changes of the films surface morphology. The coalescence of the BG droplets can be seen. The dissolution and growth processes could be assigned to the ionic exchange between BG and SBFs.

  13. Bioglass thin films for biomimetic implants

    Science.gov (United States)

    Berbecaru, C.; Alexandru, H. V.; Ianculescu, Adelina; Popescu, A.; Socol, G.; Sima, F.; Mihailescu, Ion

    2009-03-01

    Pulsed laser deposition (PLD) method was used to obtain bioglass (BG) thin film coatings on titanium substrates. An UV excimer laser KrF* ( λ = 248 nm, τ = 25 ns) was used for the multi-pulse irradiation of the BG targets with 57 or 61 wt.% SiO 2 content (and Na 2O-K 2O-CaO-MgO-P 2O 5 oxides). The depositions were performed in oxygen atmosphere at 13 Pa and for substrates temperature of 400 °C. The PLD films displayed typical BG of 2-5 μm particulates nucleated on the film surface or embedded in. The PLD films stoichiometry was found to be the same as the targets. XRD spectra have shown, the glass coatings obtained, had an amorphous structure. One set of samples, deposited in the same conditions, were dipped in simulated body fluids (SBFs) and subsequently extracted one by one after several time intervals 1, 3, 7, 14 and 21 days. After washing in deionized water and drying, the surface morphology of the samples and theirs composition were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), IR spectroscopy (FTIR) and energy dispersive X-ray analysis (EDX). After 3-7 days the Si content substantially decreases in the coatings and PO 43- maxima start to increase in FTIR spectra. The XRD spectra also confirm this evolution. After 14-21 days the XRD peaks show a crystallized fraction of the carbonated hydroxyapatite (HAP). The SEM micrographs show also significant changes of the films surface morphology. The coalescence of the BG droplets can be seen. The dissolution and growth processes could be assigned to the ionic exchange between BG and SBFs.

  14. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  15. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  16. Ti-Cr-Al-O Thin Film Resistors

    Energy Technology Data Exchange (ETDEWEB)

    Jankowski, A F; Hayes, J P

    2002-03-21

    Thin films of Ti-Cr-Al-O are produced for use as an electrical resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O{sub 2}. Vertical resistivity values from 10{sup 4} to 10{sup 10} Ohm-cm are measured for Ti-Cr-Al-O films. The film resistivity can be design selected through control of the target composition and the deposition parameters. The Ti-Cr-Al-O thin film resistor is found to be thermally stable unlike other metal-oxide films.

  17. Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Craciun, D.; Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg (Germany); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi 782-8502 (Japan); Socol, M. [National Institute for Materials Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SRMA/LA2M-LRC CARMEN CEN, Saclay (France); CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, 92292 Chatenay Malabry (France)

    2016-06-30

    Highlights: • Thin polycrystalline SiC films grown by the pulsed laser deposition technique were irradiated by 800 keV Ar ions at a dose of 2.6 × 10{sup 14} at/cm{sup 2}. • The SiC films hardness and Young modulus values significantly decreased after irradiation. • Glancing X-ray diffraction investigations showed a partial transformation of the SiC hexagonal phase into the cubic phase. • Smooth PLD grown thin films are excellent for radiation effects investigations using XRR, GIXRD and nanoindentation techniques. - Abstract: The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the C−C bonds and a corresponding decrease of the Si−C bonds in the irradiated area, which could explain the degradation of mechanical properties.

  18. Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

    Science.gov (United States)

    Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

    2017-05-23

    Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

  19. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  20. Laser scribing of polycrystalline thin films

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.

    2000-07-01

    We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe 2 (CIGS), ZnO, SnO 2, Mo, Al, and Au. The lasers included four different neodymium-yttrium-aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from ˜0.1 to ˜250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.

  1. Titanium–vanadium oxide nanocomposite thin films: Synthesis, characterization and antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Wren, A.W.; Adams, B.M.; Pradhan, D.; Towler, M.R.; Mellott, N.P., E-mail: mellott@alfred.edu

    2014-04-01

    A sol–gel based deposition method was successfully developed to produce a series of crack-free, spatially homogeneous undoped/silver doped titania–vanadia oxide nanocomposite thin films. Thin films were characterized using Glancing Incidence X-ray Diffraction (GIXRD), X-ray Photoelectron Spectroscopy (XPS), and Ultraviolet Visible Spectroscopy (UV–Vis). It was determined via both XRD and XPS that when calcined at 450 °C the nanocomposite crystallinity was a function of sol composition. Additionally, it was determined via GIXRD that upon silver doping, silver was incorporated into the vanadia structure or present in silver oxide form in crystalline films. A red shift within the UV–Vis spectra was observed with an increase of vanadia concentration from 0 to 100% respectively. Antibacterial analysis conducted on Escherichia coli and Staphylococcus epidermidis demonstrated that films exposed to light showed greater antibacterial properties. - Highlights: • Nanocomposite crystallinity was a function of sol composition. • Silver was incorporated into the vanadia structure. • A red shift was observed with an increase of vanadia concentration. • Antibacterial analysis conducted on Escherichia coli and Staphylococcus epidermidis.

  2. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  3. Electrokinetic flows in liquid crystal thin films with fixed anchoring

    Science.gov (United States)

    Conklin, Christopher; Viñals, Jorge

    We study ionic and mass transport in a liquid crystalline fluid film in its nematic phase under an applied electrostatic field. Both analytic and numerical solutions are given for some prototypical configurations of interest in electrokinetics: Thin films with spatially nonuniform nematic director that are either periodic or comprise a set of isolated disclinations. We present a quantitative description of the mechanisms inducing spatial charge separation in the nematic, and of the structure and magnitude of the resulting flows. The fundamental solutions for the charge distribution and flow velocities induced by disclinations of topological charge $m=-1/2, 1/2$ and $1$ are given. These solutions allow the analysis of several designer flows, such as "pusher" flows created by three colinear disclinations, the flow induced by an immersed spherical particle (equivalent to an $m=1$ defect) and its accompanying $m=-1$ hyperbolic hedgehog defect, and the mechanism behind nonlinear ionic mobilities when the imposed field is perpendicular to the line joining the defects.

  4. Colossal magnetoresistance and phase separation in manganite thin films

    Science.gov (United States)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  5. Phase transition of TiO{sub 2} thin films detected by the pulsed laser photoacoustic technique

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Pacheco, A.; Castaneda-Guzman, R.; Oliva Montes de Oca, C.; Esparza-Garcia, A. [Universidad Nacional Autonoma de Mexico, CCADET-UNAM, Laboratorio de Fotofisica y Peliculas Delgadas, Cd. Universitaria, A.P. 70-186, Mexico D.F. (Mexico); Perez Ruiz, S.J. [CCADET-UNAM, Acustica y Vibraciones, Mexico D.F. (Mexico)

    2011-03-15

    In this work, we present characterization of titanium oxide thin films by photoacoustic measurements to determine the ablation threshold and phase transitions from amorphous to crystalline states. The important advantages of this method are that it does not require amplification at the detection stage and that it is a non-destructive technique. The correlation analysis of the photoacoustic signals allows us to visualize the ablation threshold and the phase transitions with enhanced sensitivity. This correlation analysis clearly exhibits the changes in the thin-film morphology due to controlled variations of the fluence (energy/area) and the temperature of the surrounding medium. This is particularly important for those cases where the crystalline changes caused by temperature variations need to be monitored. The thin-film samples were prepared by the sputtering technique at room temperature in the amorphous state. The phase transformations were induced by controlled temperature scanning and then corroborated with Raman spectroscopy measurements. (orig.)

  6. Microwave-assisted synthesis of TiO2 nanoparticles: photocatalytic activity of powders and thin films

    Science.gov (United States)

    Falk, G. S.; Borlaf, M.; López-Muñoz, M. J.; Fariñas, J. C.; Rodrigues Neto, J. B.; Moreno, R.

    2018-02-01

    A simple, rapid, and effective synthesis methodology for the preparation of high-performance TiO2 nanoparticles and thin films by combining colloidal sol-gel and microwave-assisted hydrothermal synthesis was developed. The obtained results indicate that the heating with microwaves at 180 °C for 20 min was enough to synthesize crystalline TiO2 nanoparticles, presenting anatase as a major phase with a crystal size of 7 nm and a specific surface area of 220 m2 g-1. A secondary thermal treatment improved the crystallinity and induced the anatase-to-rutile transformation. The highest photocatalytic activity was found for the as-synthesized powder without any additional thermal treatment. Thin films were also prepared by dip-coating and its high photocatalytic activity showed a kinetic curve comparable to that of a thin film of commercial TiO2 powder prepared under similar conditions.

  7. Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Amirhaghi, S.; Craciun, D.; Elders, J.; Gardeniers, Johannes G.E.; Boyd, Ian W.

    Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Corning glass substrates employing either a KrF excimer laser (λ = 248 nm) or a frequency-doubled Nd:YAG laser (λ = 532 nm). The crystalline

  8. SiO $ _2 $/TiO $ _2 $ multi-layered thin films with self-cleaning and ...

    Indian Academy of Sciences (India)

    Self-cleaning, high transmittance glazing was obtained by cold spray deposition for glazings. The thin films contain TiO 2 , SiO 2 and Au nanoparticles in different structures which allow for tailoring the optical, hydrophilic and photocatalytic properties. The crystallinity, morphology and surface energy were correlated with the ...

  9. Deposition of metal chalcogenide thin films by successive ionic layer ...

    Indian Academy of Sciences (India)

    In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, ...

  10. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  11. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Synthesis and characterization of zinc oxide thin films prepared by chemical the bath technique. ... The band gap energy of the samples deduced from the fundamental absorption edge gave the values of 1.60 – 2.80 eV for the direct ... Keywords: Chemical bath technique, zinc oxide thin films, x-ray, photovoltaic cells ...

  12. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  13. Cadmium sulphide thin film for application in gamma radiation ...

    African Journals Online (AJOL)

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  14. Fabrication and Performance Study of Uniform Thin Film Integrated ...

    African Journals Online (AJOL)

    The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

  15. Tools to Synthesize the Learning of Thin Films

    Science.gov (United States)

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  16. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin-film se...

  17. Ferroelectricity in Sodium Nitrite Thin Films | Britwum | Journal of the ...

    African Journals Online (AJOL)

    Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a ...

  18. Photoconductivity of ZnTe thin films at elevated temperatures

    Indian Academy of Sciences (India)

    Unknown

    made to assess the predominance of the Poole–Frenkel con- duction mechanism in the dark and photoconductivities of. ZnTe thin films at room temperature and higher ambient temperatures. 2. Experimental. ZnTe thin films of different thicknesses were deposited on properly cleaned glass substrates with the help of a Hind.

  19. Experimental and modeling analysis of highly oriented octithiophene thin films

    NARCIS (Netherlands)

    Videlot, C; Grayer, [No Value; Ackermann, J; El Kassmi, A; Fichou, D; Hadziioannou, G

    2003-01-01

    We present a detailed study on the structure and morphology of highly oriented thin films of octithiophene (8T), the longest non-substituted oligothiophene so far. 8T thin films are vacuum-deposited on glass substrates and oriented either vertically by adjusting deposition rate and substrate

  20. Ultra thin films of nanocrystalline Ge studied by AFM and ...

    Indian Academy of Sciences (India)

    Unknown

    possibility of developing quantum lasers, single electron transistors and various other applications.2 ... In the initial growth of thin films, three types of growth can occur, depending on the surface free energy of the ... nano devices and single electron transistors.9 In this context, initial growth stages of Ge ultra thin films on ...