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Sample records for crystalline er2sio5 films

  1. Crystalline islands of semiconductor films

    International Nuclear Information System (INIS)

    Zmievskaya, G. I.; Bondareva, A. L.

    2011-01-01

    Silicon carbide (SiC) nucleation in the form of powder in a discharge plasma and the formation of thin film islands on a Si(100) substrate in the course of gas-phase epitaxy are simulated numerically. Models of plasma-like media and nonequilibrium processes accompanying phase transitions of the first kind (such as condensation and crystallization) in the initial fast (fluctuation) stage are described. The nonstationary evolution of nuclei size distribution functions is modeled by solving kinetic equations in partial derivatives and stochastic Ito-Stratonovich analog equations. This makes it possible to refine the formation mechanisms of microcrystalline state polytypes and calculate the nucleation rate and the initial roughness of a SiC coating.

  2. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  3. Novel polypyrrole films with excellent crystallinity and good thermal stability

    International Nuclear Information System (INIS)

    Jeeju, Pullarkat P.; Varma, Sreekanth J.; Francis Xavier, Puthampadath A.; Sajimol, Augustine M.; Jayalekshmi, Sankaran

    2012-01-01

    Polypyrrole has drawn a lot of interest due to its high thermal and environmental stability in addition to high electrical conductivity. The present work highlights the enhanced crystallinity of polypyrrole films prepared from the redoped sample solution. Initially hydrochloric acid doped polypyrrole was prepared by chemical oxidative polymerization of pyrrole using ammonium peroxidisulphate as oxidant. The doped polypyrrole was dedoped using ammonia solution and then redoped with camphor sulphonic acid. Films were coated on ultrasonically cleaned glass substrates from the redoped sample solution in meta-cresol. The enhanced crystallinity of the polypyrrole films has been established from X-ray diffraction (XRD) studies. The room temperature electrical conductivity of the redoped polypyrrole film is about 30 times higher than that of the hydrochloric acid doped pellet sample. The results of Raman spectroscopy, Differential scanning calorimetry (DSC) and Thermogravimetric analysis (TGA) of the samples support the enhancement in crystallinity. Percentage crystallinity of the samples is estimated from XRD and DSC data. The present work is significant, since crystallinity of films is an important parameter for selecting polymers for specific applications. - Highlights: ► Polypyrrole films redoped with CSA have been prepared from meta-cresol solution. ► The solution casted films exhibit semi-crystallinity and good thermal stability. ► Percentage crystallinity estimated using XRD and DSC analysis is about 65%. ► Raman studies support the enhancement in crystallinity based on XRD and DSC data. ► The conductivity of the film is 30 times higher than that of HCl doped sample.

  4. Novel polypyrrole films with excellent crystallinity and good thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Jeeju, Pullarkat P., E-mail: jeejupp@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin-22, Kerala (India); Varma, Sreekanth J.; Francis Xavier, Puthampadath A.; Sajimol, Augustine M. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin-22, Kerala (India); Jayalekshmi, Sankaran, E-mail: jayalekshmi@cusat.ac.in [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin-22, Kerala (India)

    2012-06-15

    Polypyrrole has drawn a lot of interest due to its high thermal and environmental stability in addition to high electrical conductivity. The present work highlights the enhanced crystallinity of polypyrrole films prepared from the redoped sample solution. Initially hydrochloric acid doped polypyrrole was prepared by chemical oxidative polymerization of pyrrole using ammonium peroxidisulphate as oxidant. The doped polypyrrole was dedoped using ammonia solution and then redoped with camphor sulphonic acid. Films were coated on ultrasonically cleaned glass substrates from the redoped sample solution in meta-cresol. The enhanced crystallinity of the polypyrrole films has been established from X-ray diffraction (XRD) studies. The room temperature electrical conductivity of the redoped polypyrrole film is about 30 times higher than that of the hydrochloric acid doped pellet sample. The results of Raman spectroscopy, Differential scanning calorimetry (DSC) and Thermogravimetric analysis (TGA) of the samples support the enhancement in crystallinity. Percentage crystallinity of the samples is estimated from XRD and DSC data. The present work is significant, since crystallinity of films is an important parameter for selecting polymers for specific applications. - Highlights: Black-Right-Pointing-Pointer Polypyrrole films redoped with CSA have been prepared from meta-cresol solution. Black-Right-Pointing-Pointer The solution casted films exhibit semi-crystallinity and good thermal stability. Black-Right-Pointing-Pointer Percentage crystallinity estimated using XRD and DSC analysis is about 65%. Black-Right-Pointing-Pointer Raman studies support the enhancement in crystallinity based on XRD and DSC data. Black-Right-Pointing-Pointer The conductivity of the film is 30 times higher than that of HCl doped sample.

  5. Rotational reorganization of doped cholesteric liquid crystalline films

    NARCIS (Netherlands)

    Eelkema, R.; M. Pollard, M.; Katsonis, N.; Vicario, J.; J. Broer, D.; Feringa, B.L.

    2006-01-01

    In this paper an unprecedented rotational reorganization of cholesteric liquid crystalline films is described. This rotational reorganization results from the conversion of a chiral molecular motor dopant to an isomer with a different helical twisting power, leading to a change in the cholesteric

  6. Phonon Scattering and Confinement in Crystalline Films

    Science.gov (United States)

    Parrish, Kevin D.

    The operating temperature of energy conversion and electronic devices affects their efficiency and efficacy. In many devices, however, the reference values of the thermal properties of the materials used are no longer applicable due to processing techniques performed. This leads to challenges in thermal management and thermal engineering that demand accurate predictive tools and high fidelity measurements. The thermal conductivity of strained, nanostructured, and ultra-thin dielectrics are predicted computationally using solutions to the Boltzmann transport equation. Experimental measurements of thermal diffusivity are performed using transient grating spectroscopy. The thermal conductivities of argon, modeled using the Lennard-Jones potential, and silicon, modeled using density functional theory, are predicted under compressive and tensile strain from lattice dynamics calculations. The thermal conductivity of silicon is found to be invariant with compression, a result that is in disagreement with previous computational efforts. This difference is attributed to the more accurate force constants calculated from density functional theory. The invariance is found to be a result of competing effects of increased phonon group velocities and decreased phonon lifetimes, demonstrating how the anharmonic contribution of the atomic potential can scale differently than the harmonic contribution. Using three Monte Carlo techniques, the phonon-boundary scattering and the subsequent thermal conductivity reduction are predicted for nanoporous silicon thin films. The Monte Carlo techniques used are free path sampling, isotropic ray-tracing, and a new technique, modal ray-tracing. The thermal conductivity predictions from all three techniques are observed to be comparable to previous experimental measurements on nanoporous silicon films. The phonon mean free paths predicted from isotropic ray-tracing, however, are unphysical as compared to those predicted by free path sampling

  7. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Crystalline silicon films grown by pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

    2002-04-01

    Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

  9. Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

    Science.gov (United States)

    He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

    2016-10-01

    Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

  10. Autophobicity and layering behavior of thin liquid-crystalline polymer films.

    NARCIS (Netherlands)

    Wielen, van der M.W.J.; Cohen Stuart, M.A.; Fleer, G.J.

    1998-01-01

    The stability against breaking-up of thin spin-coated films of liquid-crystalline polymers depends on the film thickness and annealing temperature. This study concerns side-chain liquid-crystalline polymers, based on alternating copolymers of maleic anhydride and mesogenic alkenes. The mesogenic

  11. Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films

    Directory of Open Access Journals (Sweden)

    Fabi Zhang

    2018-04-01

    Full Text Available The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition and the crystallinity increase with the rising of substrate temperature. The bandgap value and ultraviolet emission intensity of the films increase with the rising of crystallinity as observed by means of spectrophotometer and cathodoluminescence spectroscopy. Abrupt bandgap value and CL emission variations were observed when amorphous to crystalline transition took place. X-ray photoelectron spectroscopy core level spectra reveal that more oxygen vacancies and disorders exist in amorphous Ga2O3 film grown at lower substrate temperature. The valence band spectra of hard X-ray photoelectron spectroscopy present the main contribution from Ga 4sp for crystalline film deposited at substrate temperature of 500 oC, while extra subgap states has been observed in amorphous film deposited at 300 oC. The oxygen vacancy and the extra subgap density of states are suggested to be the parts of origin of bandgap and CL spectra variations. The experimental data above yields a realistic picture of optical properties and band structure variation for the amorphous to crystalline transition of Ga2O3 films.

  12. Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films

    Science.gov (United States)

    Zhang, Fabi; Li, Haiou; Cui, Yi-Tao; Li, Guo-Ling; Guo, Qixin

    2018-04-01

    The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition and the crystallinity increase with the rising of substrate temperature. The bandgap value and ultraviolet emission intensity of the films increase with the rising of crystallinity as observed by means of spectrophotometer and cathodoluminescence spectroscopy. Abrupt bandgap value and CL emission variations were observed when amorphous to crystalline transition took place. X-ray photoelectron spectroscopy core level spectra reveal that more oxygen vacancies and disorders exist in amorphous Ga2O3 film grown at lower substrate temperature. The valence band spectra of hard X-ray photoelectron spectroscopy present the main contribution from Ga 4sp for crystalline film deposited at substrate temperature of 500 oC, while extra subgap states has been observed in amorphous film deposited at 300 oC. The oxygen vacancy and the extra subgap density of states are suggested to be the parts of origin of bandgap and CL spectra variations. The experimental data above yields a realistic picture of optical properties and band structure variation for the amorphous to crystalline transition of Ga2O3 films.

  13. Enhancement of polar crystalline phase formation in transparent PVDF-CaF{sub 2} composite films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Goo; Ha, Jong-Wook, E-mail: jongwook@krict.re.kr; Sohn, Eun-Ho; Park, In Jun; Lee, Soo-Bok

    2016-12-30

    Highlights: • The crystalline phase in transparent PVDF-CaF{sub 2} composite films was investigated. • CaF{sub 2} promoted the formation of polar crystalline phases in PVDF matrix. • Ordered γ-phase was obtained by thermal treatment of as-cast films at the vicinity of its melting temperature. - Abstract: We consider the influence of calcium fluoride (CaF{sub 2}) nanoparticles on the crystalline phase formation of poly(vinylidene fluoride) (PVDF) for the first time. The transparent PVDF-CaF{sub 2} composite films were prepared by casting on PET substrates using N,N-dimethylacetamide (DMAc) as a solvent. It was found that CaF{sub 2} promoted the formation of polar crystalline phase of PVDF in composites, whereas nonpolar α-phase was dominant in the neat PVDF film prepared at the same condition. The portion of polar crystalline phase increased in proportional to the weight fraction of CaF{sub 2} in the composite films up to 10 wt%. Further addition of CaF{sub 2} suppressed completely the α-phase formation. Polar crystalline phase observed in as-cast composite films was a mixture of β- and γ-polymorph structures. It was also shown that much ordered γ-phase could be obtained through thermal treatment of as-cast PVDF-CaF{sub 2} composite film at the temperatures above the melting temperature of the composite films, but below that of γ-phase.

  14. Development of novel UV emitting single crystalline film scintillators

    Science.gov (United States)

    Zorenko, Yu; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J. A.; Martin, T.; Douissard, P.-A.

    2011-04-01

    The work is dedicated to development of new types of UV -emitting scintillators based on single crystalline films (SCF) of aluminimum perovskites and garnets grown by the liquid phase epitaxy (LPE) method. The development of the following three types of UV SCF scintillators is considered in this work: i) Ce-doped SCF of Y-Lu-Al-perovskites with Ce3+ emission in the 360-370 nm range with a decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets with Pr3+ emission in the 300-400 nm range with a decay time of 13-17 ns; iii) La3+ and Sc3+ doped SCF of Y-Lu-Al-garnets, emitting in the 290-400 nm range due to formation of the LaY,Lu, ScY,Lu and ScAl centers with decay time of 250-575 ns. The results of testing the several novel UV-emitting SCFs scintillators for visualization of X-ray images at ESFR are presented. It is shown that the UV emission of the LuAG:Sc, LuAG:La and LuAG:Pr SCFs is efficient enough for conversion of X-ray to the UV light and that these scintillators can be used for improvement of the resolution of imaging detectors in synchrotron radiation applications.

  15. Development of novel UV emitting single crystalline film scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Zorenko, Yu; Gorbenko, V; Savchyn, V; Voznyak, T [Laboratory of Opoelectronic Materials (LOM), Electronics Department of Ivan Franko National University of Lviv, 79017 Lviv (Ukraine); Nikl, M; Mares, J A [Institute of Physics of ASCR, 162 53 Prague (Czech Republic); Martin, T; Douissard, P-A, E-mail: zorenko@electronics.wups.lviv.ua [ESRF, Instrument Support Group, 6 rue Jules Horoeitz, 38043 Grenoble (France)

    2011-04-01

    The work is dedicated to development of new types of UV -emitting scintillators based on single crystalline films (SCF) of aluminium perovskites and garnets grown by the liquid phase epitaxy (LPE) method. The development of the following three types of UV SCF scintillators is considered in this work: i) Ce-doped SCF of Y-Lu-Al-perovskites with Ce{sup 3+} emission in the 360-370 nm range with a decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets with Pr{sup 3+} emission in the 300-400 nm range with a decay time of 13-17 ns; iii) La{sup 3+} and Sc{sup 3+} doped SCF of Y-Lu-Al-garnets, emitting in the 290-400 nm range due to formation of the La{sub Y,Lu}, Sc{sub Y,Lu} and Sc{sub Al} centers with decay time of 250-575 ns. The results of testing the several novel UV-emitting SCFs scintillators for visualization of X-ray images at ESFR are presented. It is shown that the UV emission of the LuAG:Sc, LuAG:La and LuAG:Pr SCFs is efficient enough for conversion of X-ray to the UV light and that these scintillators can be used for improvement of the resolution of imaging detectors in synchrotron radiation applications.

  16. Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

    International Nuclear Information System (INIS)

    Liu, F. B.; Jing, B.; Cui, Y.; Di, J. J.; Qu, M.

    2015-01-01

    The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond film are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed

  17. Mesoscale control of organic crystalline thin films: effects of film morphology on the performance of organic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jaekyun; Park, Sungkyu [Chung-Ang University, Seoul (Korea, Republic of); Kim, Yonghoon [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-08-15

    We report mesoscale control of small molecular 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) crystalline thin films by varying the solute concentration in the fluidic channel method. A stepwise increase in the TIPS-pentacene concentration in the solution enabled us to prepare highly-crystallized ribbons, thin films, and thick films in a mesoscale range, respectively. All three types of deposited films exhibited an in-plane crystalline nature of (001) direction being normal to the substrate as well as crystalline domain growth parallel to the direction of the receding meniscus inside the fluidic channel. In addition, the film's morphology and thickness were found to have a great influence on the field-effect mobility of the transistors, and the highest average and maximum mobilities were achieved from transistors with thin-film semiconductor channels.

  18. Controlling the morphology of side chain liquid crystalline block copolymer thin films through variations in liquid crystalline content.

    Science.gov (United States)

    Verploegen, Eric; Zhang, Tejia; Jung, Yeon Sik; Ross, Caroline; Hammond, Paula T

    2008-10-01

    In this paper, we describe methods for manipulating the morphology of side-chain liquid crystalline block copolymers through variations in the liquid crystalline content. By systematically controlling the covalent attachment of side chain liquid crystals to a block copolymer (BCP) backbone, the morphology of both the liquid crystalline (LC) mesophase and the phase-segregated BCP microstructures can be precisely manipulated. Increases in LC functionalization lead to stronger preferences for the anchoring of the LC mesophase relative to the substrate and the intermaterial dividing surface. By manipulating the strength of these interactions, the arrangement and ordering of the ultrathin film block copolymer nanostructures can be controlled, yielding a range of morphologies that includes perpendicular and parallel cylinders, as well as both perpendicular and parallel lamellae. Additionally, we demonstrate the utilization of selective etching to create a nanoporous liquid crystalline polymer thin film. The unique control over the orientation and order of the self-assembled morphologies with respect to the substrate will allow for the custom design of thin films for specific nanopatterning applications without manipulation of the surface chemistry or the application of external fields.

  19. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

    International Nuclear Information System (INIS)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-01-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. - Highlights: • First practical application of epitaxial garnet films demonstrated in SEM. • Improved image quality of SEM equipped with GAGG:Ce single crystalline thin film scintillator. • Scintillation properties of GAGG:Ce films compared with standard bulk crystal scintillators.

  20. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  1. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    KAUST Repository

    Yang, Zhenqian; Deng, Yuhao; Zhang, Xiaowei; Wang, Suo; Chen, Huazhou; Yang, Sui; Khurgin, Jacob; Fang, Nicholas X.; Zhang, Xiang; Ma, Renmin

    2018-01-01

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial

  2. Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

    Energy Technology Data Exchange (ETDEWEB)

    Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reeja-Jayan, B. [Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States); De la Rosa, E. [Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico); Ortiz-Mendez, U. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reyes-Betanzo, C. [Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico); Cruz-Silva, R. [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico); Jose-Yacaman, M. [Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)

    2010-03-15

    In this work patterned ZnO films were prepared at room-temperature by deposition of {approx}5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation ({lambda} = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

  3. Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

    International Nuclear Information System (INIS)

    Sepulveda-Guzman, S.; Reeja-Jayan, B.; De la Rosa, E.; Ortiz-Mendez, U.; Reyes-Betanzo, C.; Cruz-Silva, R.; Jose-Yacaman, M.

    2010-01-01

    In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

  4. Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer

    International Nuclear Information System (INIS)

    Bagkar, Nitin; Choudhury, Sipra; Kim, Kyung-Hee; Chowdhury, Prasanta; Lee, Sung-Ik; Yakhmi, J.V.

    2006-01-01

    Crystalline films of cobalt, nickel and iron hexacyanochromates (analogues of Prussian blue) were grown at air-water interface using a surfactant monolayer as a template. These films were transferred on suitable substrates and characterized by X-ray diffraction (XRD), cyclic voltammetry and magnetization measurements. XRD patterns confirmed the formation of oriented crystals in {100} direction for all these films. Magnetization data on nickel and iron hexacyanochromate films indicated ferromagnetic behaviour below Curie temperatures of 72 and 21 K, respectively. The methodology adopted by us to grow crystalline films is useful in obtaining magnetic thin films of analogues of Prussian blue with interesting magnetic properties with respect to transition temperatures and nature of magnetic ordering

  5. Structural, optical and mechanical properties of amorphous and crystalline alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nayar, Priyanka [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Khanna, Atul, E-mail: akphysics@yahoo.com [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Kabiraj, D.; Abhilash, S.R. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Beake, Ben D.; Losset, Yannick [Micro Materials Limited, Unit 3, Wrexham Technology Park, Wrexham LL13 7YP (United Kingdom); Chen, Banghao [Chemistry and Biochemistry Department, Florida State University, Tallahassee 32306 (United States)

    2014-10-01

    Thin films of amorphous alumina of thickness 350 nm were deposited on fused silica substrates by electron beam evaporation. Amorphous films were annealed at several temperatures in the range: 400–1130 °C and changes in film crystallinity, short-range structure, optical and mechanical properties were studied. X-ray diffraction studies found that crystallization starts at 800 °C and produces γ and δ-alumina, the latter phase grows with heat treatment and the sample was mostly δ and θ-alumina after annealing at 1130 °C. The as-deposited amorphous alumina films have low hardness of 5 to 8 GPa, which increases to 11 to 12 GPa in crystalline sample. {sup 27}Al Magic Angle Spinning Nuclear Magnetic Resonance was used to study the short-range order of amorphous and crystalline alumina films and it was found that amorphous alumina film contains AlO{sub 5} and AlO{sub 4} structural units in the ratio of 1:2. The concentration of AlO{sub 5} was significantly suppressed in crystalline film, which contains 48% of Al{sup 3+} ions in AlO{sub 6}, 7% in AlO{sub 5} and 45% in AlO{sub 4} units. - Highlights: • Structure–property correlations in alumina films grown by electron-beam evaporation • Amorphous films crystallize into γ and δ-alumina on annealing in air at 800 °C. • δ and θ-alumina films are stable up to 1130 °C and do not transform to α-phase. • Amorphous alumina films contain {sup [5]}Al and {sup [4]}Al structural units in the ratio of 1:2. • {sup [5]}Al decreases whereas {sup [6]}Al concentration increases on crystallization.

  6. Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

    International Nuclear Information System (INIS)

    Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

    1995-01-01

    High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

  7. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  8. Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

    2011-06-15

    In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

  9. Study of the structural evolutions of crystalline tungsten oxide films prepared using hot-filament CVD

    International Nuclear Information System (INIS)

    Feng, P X; Wang, X P; Zhang, H X; Yang, B Q; Wang, Z B; Gonzalez-BerrIos, A; Morell, G; Weiner, B

    2007-01-01

    Structural evolutions of tungsten oxide(WO 3 ) samples on different substrates are studied using Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy. The WO 3 samples are prepared using hot-filament CVD techniques. The focus of the study is on the evolutions of nano structures at different stages following deposition time. The experimental measurements reveal evolutions of the surface structures from uniform film to fractal-like structures, and eventually to nano particles, and crystalline structures from mono (0 1 0) crystalline thin film to polycrystalline thick film developments. The effect of high temperature on the nanostructured WO 3 is also investigated. Well-aligned nanoscale WO 3 rod arrays are obtained at a substrate temperature of up to 1400 deg. C. Further increasing the substrate temperature yields microscale crystalline WO 3 particles

  10. Electrochemically synthesized amorphous and crystalline nanowires: dissimilar nanomechanical behavior in comparison with homologous flat films

    Science.gov (United States)

    Zeeshan, M. A.; Esqué-de Los Ojos, D.; Castro-Hartmann, P.; Guerrero, M.; Nogués, J.; Suriñach, S.; Baró, M. D.; Nelson, B. J.; Pané, S.; Pellicer, E.; Sort, J.

    2016-01-01

    The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices.The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires

  11. Collagen films with stabilized liquid crystalline phases and concerns on osteoblast behaviors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Minjian; Ding, Shan; Min, Xiang; Jiao, Yanpeng, E-mail: tjiaoyp@jnu.edu.cn; Li, Lihua; Li, Hong; Zhou, Changren, E-mail: tcrz9@jnu.edu.cn

    2016-01-01

    To duplicate collagen's in vivo liquid crystalline (LC) phase and investigate the relationship between the morphology of LC collagen and osteoblast behavior, a self-assembly method was introduced for preparing collagen films with a stabilized LC phase. The LC texture and topological structure of the films before and after stabilization were observed with polarizing optical microscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The relationship between the collagen films and osteoblast behavior was studied with the 3-(4,5)-dimethylthiahiazo(-z-y1)-3,5-di-phenytetrazoliumromide method, proliferation index detection, alkaline phosphatase measurements, osteocalcin assay, inverted microscopy, SEM observation, AFM observation, and cytoskeleton fluorescence staining. The results showed that the LC collagen film had continuously twisting orientations in the cholesteric phase with a typical series of arced patterns. The collagen fibers assembled in a well-organized orientation in the LC film. Compared to the non-LC film, the LC collagen film can promote cell proliferation, and increase ALP and osteocalcin expression, revealing a contact guide effect on osteoblasts. - Highlights: • Collagen film with liquid crystalline (LC) phase was observed by POM, SEM and AFM. • The effect of LC collagen film on osteoblasts behaviors was studied in detail. • LC collagen film promoted osteoblast proliferation and osteogenesis activity.

  12. Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature

    International Nuclear Information System (INIS)

    Choi, Sun Hee; Kim, Joosun; Yoon, Young Soo

    2005-01-01

    Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films

  13. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  14. Exceptionally crystalline and conducting acid doped polyaniline films by level surface assisted solution casting approach

    Energy Technology Data Exchange (ETDEWEB)

    Puthirath, Anand B.; Varma, Sreekanth J.; Jayalekshmi, S., E-mail: jayalekshmi@cusat.ac.in [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India); Methattel Raman, Shijeesh [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India)

    2016-04-18

    Emeraldine salt form of polyaniline (PANI) was synthesized by chemical oxidative polymerisation method using ammonium persulfate as oxidant. Resultant emeraldine salt form of PANI was dedoped using ammonia solution and then re-doped with camphor sulphonic acid (CSA), naphthaline sulphonic acid (NSA), hydrochloric acid (HCl), and m-cresol. Thin films of these doped PANI samples were deposited on glass substrates using solution casting method with m-cresol as solvent. A level surface was employed to get homogeneous thin films of uniform thickness. Detailed X-ray diffraction studies have shown that the films are exceptionally crystalline. The crystalline peaks observed in the XRD spectra can be indexed to simple monoclinic structure. FTIR and Raman spectroscopy studies provide convincing explanation for the exceptional crystallinity observed in these polymer films. FESEM and AFM images give better details of surface morphology of doped PANI films. The DC electrical conductivity of the samples was measured using four point probe technique. It is seen that the samples also exhibit quite high DC electrical conductivity, about 287 S/cm for CSA doped PANI, 67 S/cm for NSA doped PANI 65 S/cm for HCl doped PANI, and just below 1 S/cm for m-cresol doped PANI. Effect of using the level surface for solution casting is studied and correlated with the observed crystallinity.

  15. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-01-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 x 10 -4 Ω cm at 80 deg. C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density

  16. Low-temperature sputtering of crystalline TiO2 films

    International Nuclear Information System (INIS)

    Musil, J.; Herman, D.; Sicha, J.

    2006-01-01

    This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

  17. Development of A Thin Film Crystalline Silicon Solar Cell

    International Nuclear Information System (INIS)

    Sopori, B.; Chen, W.; Zhang, Y.

    1998-01-01

    A new design for a single junction, thin film Si solar cell is presented. The cell design is compatible with low-temperature processing required for the use of a low-cost glass substrate, and includes effective light trapping and impurity gettering. Elements of essential process steps are discussed

  18. Scintillating screens based on the single crystalline films of multicomponent garnets: new achievements and possibilities

    Czech Academy of Sciences Publication Activity Database

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Paprocki, K.; Nikl, Martin; Mareš, Jiří A.; Bilski, P.; Twardak, A.; Sidletskiy, O.; Gerasymov, I.; Grinyov, B.; Fedorov, A.

    2016-01-01

    Roč. 63, č. 2 (2016), s. 497-502 ISSN 0018-9499 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Ce dopant * garnets * liquid phase epitaxy * luminescence * scintillators * single crystalline films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.171, year: 2016

  19. Light-induced circular birefringence in cyanoazobenzene side-chain liquid-crystalline polyester films

    DEFF Research Database (Denmark)

    Naydenova, I; Nikolova, L; Ramanujam, P.S.

    1999-01-01

    We report the inducement of large circular birefringence (optical activity) in films of a cyanoazobenzene side-chain liquid-crystalline polyester on illumination with circularly polarized light. The polyester has no chiral groups and is initially isotropic. The induced optical rotation is up to 5...

  20. In situ differential reflectance spectroscopy of thin crystalline films of PTCDA on different substrates

    International Nuclear Information System (INIS)

    Proehl, Holger; Nitsche, Robert; Dienel, Thomas; Leo, Karl; Fritz, Torsten

    2005-01-01

    We report an investigation of the excitonic properties of thin crystalline films of the archetypal organic semiconductor PTCDA (3,4,9,10-perylenetetracarboxylic dianhydride) grown on poly- and single crystalline surfaces. A sensitive setup capable of measuring the optical properties of ultrathin organic molecular crystals via differential reflectance spectroscopy (DRS) is presented. This tool allows to carry out measurements in situ, i.e., during the actual film growth, and over a wide spectral range, even on single crystalline surfaces with high symmetry or metallic surfaces, where widely used techniques like reflection anisotropy spectroscopy (RAS) or fluorescence excitation spectroscopy fail. The spectra obtained by DRS resemble mainly the absorption of the films if transparent substrates are used, which simplifies the analysis. In the case of mono- to multilayer films of PTCDA on single crystalline muscovite mica(0001) and Au(111) substrates, the formation of the solid state absorption from monomer to dimer and further to crystal-like absorption spectra can be monitored

  1. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

  2. LPE growth and scintillation properties of (Zn,Mg)O single crystalline film

    Czech Academy of Sciences Publication Activity Database

    Yoshikawa, A.; Yanagida, T.; Fujimoto, Y.; Kurosawa, S.; Yokota, Y.; Yamaji, A.; Sugiyama, M.; Wakahara, S.; Futami, Y.; Kikuchi, M.; Miyamoto, M.; Sekiwa, H.; Nikl, Martin

    2012-01-01

    Roč. 59, č. 5 (2012), 2286-2289 ISSN 0018-9499 R&D Projects: GA MŠk LH12150 Institutional research plan: CEZ:AV0Z10100521 Keywords : crystalline materials * epitaxial layers * liquid phase epitaxy * scintillator * semiconductor films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.219, year: 2012

  3. Solid state dewetting and stress relaxation in a thin single crystalline Ni film on sapphire

    International Nuclear Information System (INIS)

    Rabkin, E.; Amram, D.; Alster, E.

    2014-01-01

    In this study, we deposited a 80 nm thick single crystalline Ni film on a sapphire substrate. Heat treatment of this film at 1000 °C followed by slow cooling resulted in the formation of faceted holes, star-like channel instabilities and faceted microwires. The ridges at the rims of faceted holes and channels exhibited a twinning orientation relationship with the rest of the film. A sub-nanometer-high hexagonal topography pattern on the surface of the unperturbed film was observed by atomic force microscopy. No such pattern was observed on the top facets of isolated Ni particles and hole ridges. We discuss the observed dewetting patterns in terms of the effects of Ni surface anisotropy and faceting on solid state dewetting. The hexagonal pattern on the surface of the unperturbed film was attributed to thermal stress relaxation in the film via dislocations glide. This work demonstrates that solid state dewetting of single crystalline metal films can be utilized for film patterning and for producing hierarchical surface topographies

  4. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  5. Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S.

    1997-01-01

    Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors)

  6. Electrochromism in surface modified crystalline WO3 thin films grown by reactive DC magnetron sputtering

    Science.gov (United States)

    Karuppasamy, A.

    2013-10-01

    In the present work, tungsten oxide thin films were deposited at various oxygen chamber pressures (1.0-5.0 × 10-3 mbar) by maintaining the sputtering power density and argon pressure constant at 3.0 W/cm2 and 1.2 × 10-2 mbar, respectively. The role of surface morphology and porosity on the electrochromic properties of crystalline tungsten oxide thin films has been investigated. XRD and Raman studies reveal that all the samples post annealed at 450 ̊C in air for 3.0 h settle in monoclinic crystal system of tungsten oxide (W18O49). Though the phase of material is indifferent to oxygen pressure variations (PO2), morphology and film density shows a striking dependence on PO2. A systematic study on plasma (OES), morphology, optical and electrochromic properties of crystalline tungsten oxide reveal that the films deposited at PO2 of 2.0 × 10-3 mbar exhibit better coloration efficiency (58 cm2/C), electron/ion capacity (Qc: -25 mC/cm2), and reversibility (92%). This is attributed to the enhanced surface properties like high density of pores and fine particulates (100 nm) and to lesser bulk density of the film (ρ/ρo = 0.84) which facilitates the process of intercalation/de-intercalation of protons and electrons. These results show good promise toward stable and efficient crystalline tungsten oxide based electrochromic device applications.

  7. Langmuir-Blodgett films prepared from pre-formed cholestanic liquid-crystalline polymers

    Energy Technology Data Exchange (ETDEWEB)

    Tundo, P.; Hodge, P.; Valli, L.; Davis, F. (Venice Univ. (Italy). Dip. di Scienze Ambientali Lecce Univ. (Italy). Dip. di Scienza dei Materiali Manchester Univ. (United Kingdom). Dep. of Chemistry)

    1992-01-01

    A series of alternating copolymers of maleic anhydride and a-olefins functionalized through different alkyl chains with cholestanic groups were synthetised and derivatives prepared by reactions of the anhydride residues with methanol, water, dimethylamine and morpholine, respectively. The same starting functionalized a-olefins were used to prepare other suitable compounds in order to correlate the features of the liquid-crystalline behaviour of the mesogenic cholestanic group with the stability of the forthcoming polymeric or not polymeric Langmuir-Blodgett (LB) films. For some copolymers surface pressure against area per molecule isotherms are reported. In some multilayer (LB) films, the spacings between the layers were determined by the detection of BRAGG peaks by X-ray diffraction. The (LB) films of these polymers are closed packed, owing to either the polymeric skeleton or liquid-crystalline interaction.

  8. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM.

    Science.gov (United States)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-04-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Luminescence properties and energy transfer processes in YAG:Yb,Er single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Batentschuk, M.; Osvet, A.; Brabec, C.

    2013-01-01

    The paper is dedicated to the study of the optical properties of YAG:Yb,Er single-crystalline films (SCF) grown by liquid phase epitaxy. The absorption, cathodoluminescence and time-resolved photoluminescence spectra and photoluminescence decay curves were measured for the SCFs with different doping levels of Er 3+ (from 0.6 to 4.2 at.%) and Yb 3+ (from 0.1 to 0.6 at.%). The spectra, excited by synchrotron radiation in the fundamental absorption range of the YAG and in the intraionic absorption bands of both dopants, reveal energy transfer from the YAG host to the Er 3+ and Yb 3+ ions and between these ions. -- Highlights: •Growth of YAG:Yb,Er single crystalline films by LPE method. •Peculiarities of luminescence of YAG:Yb,Er films with different Er–Yb content. •Yb–Er energy transfer processes in YAG hosts

  10. Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

    Directory of Open Access Journals (Sweden)

    Chuan Du

    2012-06-01

    Full Text Available New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs is achieved with good reproducibility.

  11. Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

    International Nuclear Information System (INIS)

    Wang Jin; Wang Hui; Zhao Wang; Ma Yan; Li Wan-Cheng; Shi Zhi-Feng; Zhao Long; Zhang Bao-Lin; Dong Xin; Du Guo-Tong; Xia Xiao-Chuan

    2011-01-01

    NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying

    2013-06-02

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.

  13. Controlling morphology, mesoporosity, crystallinity, and photocatalytic activity of ordered mesoporous TiO{sub 2} films prepared at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Elgh, Björn; Yuan, Ning; Palmqvist, Anders E. C. [Applied Surface Chemistry, Department of Chemical and Biological Engineering, Chalmers University of Technology, SE 412 96 Göteborg (Sweden); Cho, Hae Sung; Terasaki, Osamu [Graduate School of EEWS (WCU), KAIST, Daejeon 305-701 (Korea, Republic of); Magerl, David; Philipp, Martine; Müller-Buschbaum, Peter [Lehrstuhl für Funktionelle Materialien, Physik-Department, Technische Universität München, 85748 Garching (Germany); Roth, Stephan V. [DESY, Notkestrasse 85, 22603 Hamburg (Germany); Yoon, Kyung Byung [Department of Chemistry, Sogang University, Seoul 121-742 (Korea, Republic of)

    2014-11-01

    Partly ordered mesoporous titania films with anatase crystallites incorporated into the pore walls were prepared at low temperature by spin-coating a microemulsion-based reaction solution. The effect of relative humidity employed during aging of the prepared films was studied using SEM, TEM, and grazing incidence small angle X-ray scattering to evaluate the mesoscopic order, porosity, and crystallinity of the films. The study shows unambiguously that crystal growth occurs mainly during storage of the films and proceeds at room temperature largely depending on relative humidity. Porosity, pore size, mesoscopic order, crystallinity, and photocatalytic activity of the films increased with relative humidity up to an optimum around 75%.

  14. Crystallinity of the double layer of cadmium arachidate films at the water surface

    DEFF Research Database (Denmark)

    Leveiller, F.; Jacquemain, D.; Lahav, M.

    1991-01-01

    A crystalline counterionic layer at the interface between an electrolyte solution and a charged layer of insoluble amphiphilic molecules was observed with grazing incidence synchrotron x-ray diffraction. Uncompressed arachidic films spread over 10(-3) molar cadmium chloride solution (pH 8.......8) spontaneously form crystalline clusters with coherence lengths of approximately 1000 angstroms at 9-degrees-C. Ten distinct diffraction peaks were observed, seven of which were attributed to scattering only from a crystalline Cd2+ layer and the other three to scattering primarily from the arachidate layer....... The reflections from the Cd2+ layer were indexed according to a 2 X 3 supercell of the arachidate lattice with three Cd2+ ions per cadmium unit cell....

  15. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  16. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  17. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)

    2016-05-06

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  18. Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

    Science.gov (United States)

    Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

    2017-10-01

    We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

  19. The influence of the surface parameter changes onto the phonon states in ultrathin crystalline films

    Science.gov (United States)

    Šetrajčić, Jovan P.; Ilić, Dušan I.; Jaćimovski, Stevo K.

    2018-04-01

    In this paper, we have analytically investigated how the changes in boundary surface parameters influence the phonon dispersion law in ultrathin films of the simple cubic crystalline structure. Spectra of possible phonon states are analyzed using the method of two-time dependent Green's functions and for the diverse combination of boundary surface parameters, this problem was presented numerically and graphically. It turns out that for certain values and combinations of parameters, displacement of dispersion branches outside of bulk zone occurs, leading to the creation of localized phonon states. This fact is of great importance for the heat removal, electrical conductivity and superconducting properties of ultrathin films.

  20. The recombination channels of luminescence excitation in YAG:Yb single crystalline films

    International Nuclear Information System (INIS)

    Zakharko, Ya.M.; Luchechko, A.P.; Ubizskii, S.B.; Syvorotka, I.I.; Martynyuk, N.V.; Syvorotka, I.M.

    2007-01-01

    Absorption and emission spectra, luminescence decay kinetics and thermostimulated luminescence of X-ray irradiated YAG:Yb single crystalline films were studied. Two emission bands peaked at 420 and 488 nm have been detected in the investigated films. The strong thermal quenching of luminescence band at 488 nm was observed above 160 K. The influence of growth conditions and annealing in air on the lifetime of Yb 3+ ion excited state in the IR spectral region have been revealed. The recombination mechanisms of the f-f transition at Yb 3+ ion excitation, as well as the mechanism of lifetime shortening for the excited Yb 3+ luminescence have been discussed

  1. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  2. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  3. Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

    International Nuclear Information System (INIS)

    Mishra, Amita; Dutta, Anirban; Samaddar, Sayanti; Gupta, Anjan K.

    2013-01-01

    We report the wet chemical deposition of single crystalline epitaxial thin films of the colossal magneto-resistive manganite La 0.67 Sr 0.33 MnO 3 on the lattice-matched (001)-face of a La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 substrate. Topographic images of these films taken with a scanning tunneling microscope show atomically flat terraces separated by steps of monatomic height. The resistivity of these films shows an insulator-metal transition at 310 K, nearly coincident with the Curie temperature of 340 K, found from magnetization measurements. The films show a magnetoresistance of 7% at 300 K and 1.2 T. Their saturation magnetization value at low temperatures is consistent with that of the bulk. - Highlights: ► Wet chemical deposition of La 0.67 Sr 0.33 MnO 3 (LSMO) on a lattice-matched substrate. ► Single crystalline epitaxial LSMO films obtained. ► Flat terraces separated by monatomic steps observed by scanning tunneling microscope

  4. Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

    2017-11-01

    Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

  5. Development of orodispersible polymer films with focus on the solid state characterization of crystalline loperamide.

    Science.gov (United States)

    Woertz, Christina; Kleinebudde, Peter

    2015-08-01

    The formulation of active pharmaceutical ingredients (API) as orodispersible films is gaining interest among novel oral drug delivery systems due to their small size, enhanced flexibility and improved patient compliance. The aim of this work was the preparation and characterization of orodispersible films containing loperamide hydrochloride (LPH) as model drug. As loperamide hydrochloride is poorly soluble in water it was used in crystalline form with a loading of 2mg/6cm(2) film. Hydroxypropyl methylcellulose (HPMC) and different types of hydroxypropyl cellulose (HPC) in different concentrations were used as film forming polymers whereas arabic gum, xanthan gum and tragacanth served as thickening agents. Films were characterized with respect to the content uniformity, morphology, thermal behavior and crystallinity. Suspensions were investigated regarding their viscosity using a rotational rheometer and the crystal structure of the Active Pharmaceutical Ingredient (API) was analyzed using polarized light microscopy. The development of flexible, non-brittle and homogeneous films of LPH was feasible. Two polymorphic forms of LPH appeared in the film formulations dependent on the utilized polymer. While in presence of HPMC the original polymorphic form I remained stable in suspension and films, the polymorphic form II occurred in presence of HPC. Both polymorphic forms were prepared separately and a solid state characterization was performed. Polymorph I showed isometric crystals whereas polymorph II showed needle shaped crystals. Tragacanth was able to prevent the transformation to polymorph II, if it was dissolved first before HPC. When HPC was added first to the suspension, the conversion to form II occurred irreversibly also after further addition of tragacanth. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. The effect of the stretching of PLA extruded films on their crystallinity and gas barrier properties

    Science.gov (United States)

    Guinault, A.; Menary, G. H.; Courgneau, C.; Griffith, D.; Ducruet, V.; Miri, V.; Sollogoub, C.

    2011-05-01

    Driven by environmental concerns, new polymers based on renewable resources are arriving on the market to replace conventional polymers, obtained from petroleum, for different applications like food packaging. One of the most prominent polymers among these materials is poly(lactic acid) (PLA), a biodegradable, thermoplastic, aliphatic polyester derived from renewable resources, such as corn starch (in the USA) or sugarcanes (in the rest of the world). However this polymer presents different disadvantages and especially low gas barrier properties [1]. Thermal crystallization can be used to increase its gas barrier properties but long times are necessary [2] and are not compatible with an industrial process. Another way to increase the gas barrier properties consists in stretching the film in order to increase its crystallinity and so its diffusion coefficient. We have prepared stretched PLA films with different stretch ratio and we have studied the effect of the stretching parameters on the gas barrier properties of PLA films. Finally we compared this process with the isothermal crystallization process by taking into account the crystallinity degree and the crystalline morphology.

  7. Establishing whether the structural feature controlling the mechanical properties of starch films is molecular or crystalline.

    Science.gov (United States)

    Li, Ming; Xie, Fengwei; Hasjim, Jovin; Witt, Torsten; Halley, Peter J; Gilbert, Robert G

    2015-03-06

    The effects of molecular and crystalline structures on the tensile mechanical properties of thermoplastic starch (TPS) films from waxy, normal, and high-amylose maize were investigated. Starch structural variations were obtained through extrusion and hydrothermal treatment (HTT). The molecular and crystalline structures were characterized using size-exclusion chromatography and X-ray diffractometry, respectively. TPS from high-amylose maize showed higher elongation at break and tensile strength than those from normal maize and waxy maize starches when processed with 40% plasticizer. Within the same amylose content, the mechanical properties were not affected by amylopectin molecular size or the crystallinity of TPS prior to HTT. This lack of correlation between the molecular size, crystallinity and mechanical properties may be due to the dominant effect of the plasticizer on the mechanical properties. Further crystallization of normal maize TPS by HTT increased the tensile strength and Young's modulus, while decreasing the elongation at break. The results suggest that the crystallinity from the remaining ungelatinized starch granules has less significant effect on the mechanical properties than that resulting from starch recrystallization, possibly due to a stronger network from leached-out amylose surrounding the remaining starch granules. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

    Science.gov (United States)

    Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

    1993-07-01

    Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

  9. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  10. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  11. Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

    Science.gov (United States)

    Rochford, C.; Medlin, D. L.; Erickson, K. J.; Siegal, M. P.

    2015-12-01

    Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1-xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%-95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

  12. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  13. Tuning Eu"3"+ emission in europium sesquioxide films by changing the crystalline phase

    International Nuclear Information System (INIS)

    Mariscal, A.; Quesada, A.; Camps, I.; Palomares, F.J.; Fernández, J.F.; Serna, R.

    2016-01-01

    Highlights: • PLD production of high quality europium sesquioxide (Eu_2O_3) films. • The deposition of Al_2O_3 capping and/or buffer layers modifies the crystallization for Eu_2O_3 films upon annealing. • The formation of cubic or monoclinic phases can be favored. • Eu"3"+ emission tuning is achieved as a consequence of crystal field effects. - Abstract: We report the growth of europium sesquioxide (Eu_2O_3) thin films by pulsed laser deposition (PLD) in vacuum at room temperature from a pure Eu_2O_3 ceramic bulk target. The films were deposited in different configurations formed by adding capping and/or buffer layers of amorphous aluminum oxide (a-Al_2O_3). The optical properties, refractive index and extinction coefficient of the as deposited Eu_2O_3 layers were obtained. X-ray photoelectron spectroscopy (XPS) measurements were done to assess its chemical composition. Post-deposition annealing was performed at 500 °C and 850 °C in air in order to achieve the formation of crystalline films and to accomplish photoluminescence emission. According to the analysis of X-ray diffraction (XRD) spectra, cubic and monoclinic phases were formed. It is found that the relative amount of the phases is related to the different film configurations, showing that the control over the crystallization phase can be realized by adequately designing the structures. All the films showed photoluminescence emission peaks (under excitation at 355 nm) that are attributed to the intra 4f-transitions of Eu"3"+ ions. The emission spectral shape depends on the crystalline phase of the Eu_2O_3 layer. Specifically, changes in the hypersensitive "5D_0 → "7F_2 emission confirm the strong influence of the crystal field effect on the Eu"3"+ energy levels.

  14. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  15. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  16. Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B

    2003-04-15

    Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T{sub S}=450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal {beta}-MoSi{sub 2} could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet.

  17. Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

    International Nuclear Information System (INIS)

    Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B.

    2003-01-01

    Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T S =450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal β-MoSi 2 could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet

  18. Metal Chloride Induced Formation of Porous Polyhydroxybutyrate (PHB) Films: Morphology, Thermal Properties and Crystallinity

    Science.gov (United States)

    Tan, W. L.; Yaakob, N. N.; Zainal Abidin, A.; Abu Bakar, M.; Abu Bakar, N. H. H.

    2016-06-01

    Polyhydroxybutyrate (PHB) films with highly porous structures were synthesized using a one phase system comprising of metal chloride/methanol/PHB/chloroform (MCl2/CH3OH/PHB/CHCl3). SEM analyses confirmed that the MCl2 (where M = Cu2+ or Ni2+) induced porous structures with pore sizes ranging from 0.3 - 2.0 μm. The average pore size increased with the increasing MCl2 content. There existed weak physical interactions between the PHB chains and MCl2 as revealed by FTIR and NMR spectroscopies. The residue of MCl2 in the porous PHB film does not exert significant influence on the thermal stability of PHB. Nevertheless, the crystallinity of the prepared film is enhanced, as MCl2 acts as the nucleation sites to promote the growth of spherullites.

  19. Momentum-dependent excitation processes in crystalline and amorphous films of conjugated oligomers

    International Nuclear Information System (INIS)

    Zojer, E.; Knupfer, M.; Shuai, Z.; Fink, J.; Bredas, J.L.; Hoerhold, H.-H.; Grimme, J.; Scherf, U.; Benincori, T.; Leising, G.

    2000-01-01

    The electronic structure of periodic materials is usually described on the basis of band-structure models, in which each state is not only characterized by its energy but also by the corresponding electron momentum. In this paper we present investigations of momentum-dependent excitation processes in a number of molecular crystals and amorphous thin films. For our studies we have chosen ladder-type quinquephenyl (5LP), distyrylbenzene (3PV), a substituted quinquephenylenevinylene (5PV), and a bridged quarterthienyl (4TB). These substances are representative for several classes of conjugated organic materials. Their physical properties are dominated by the molecular building blocks. The investigated films, however, also allow us to study differences in the characteristics of crystalline (3PV and 4TB), partly amorphous (5LP) and fully amorphous (5PV) systems. Momentum-dependent excitations are induced by inelastic electron scattering in electron-energy-loss spectroscopy (EELS) experiments. The experimental data are compared to molecule based post-Hartree-Fock quantum-chemical simulations performed with the intermediate neglect of differential overlap (INDO) approach coupled to a configuration interaction (CI) technique applying the proper momentum-dependent transition matrix elements. Our results show that even in relatively small systems the molecular electronic states can be characterized by an associated range in momentum space. In addition, differences between inelastic electron scattering spectra for low values of momentum transfer and the optical data obtained for the crystalline samples underline the strong impact of light propagation on the absorption characteristics of highly anisotropic crystalline materials

  20. Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

    International Nuclear Information System (INIS)

    Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

    2006-01-01

    We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

  1. Interface-Induced Zeeman-Protected Superconductivity in Ultrathin Crystalline Lead Films

    Directory of Open Access Journals (Sweden)

    Yi Liu

    2018-04-01

    Full Text Available Two-dimensional (2D superconducting systems are of great importance for exploring exotic quantum physics. The recent development of fabrication techniques has stimulated studies of high-quality single-crystalline 2D superconductors, where intrinsic properties give rise to unprecedented physical phenomena. Here, we report the observation of Zeeman-type spin-orbit interaction protected superconductivity (Zeeman-protected superconductivity in 4-monolayer (ML to 6-ML crystalline Pb films grown on striped incommensurate Pb layers on Si(111 substrates by molecular beam epitaxy. An anomalously large in-plane critical field far beyond the Pauli limit is detected, which can be attributed to the Zeeman-protected superconductivity due to the in-plane inversion symmetry breaking at the interface. Our work demonstrates that, in superconducting heterostructures, the interface can induce Zeeman-type spin-orbit interactions and modulate the superconductivity.

  2. Interface-Induced Zeeman-Protected Superconductivity in Ultrathin Crystalline Lead Films

    Science.gov (United States)

    Liu, Yi; Wang, Ziqiao; Zhang, Xuefeng; Liu, Chaofei; Liu, Yongjie; Zhou, Zhimou; Wang, Junfeng; Wang, Qingyan; Liu, Yanzhao; Xi, Chuanying; Tian, Mingliang; Liu, Haiwen; Feng, Ji; Xie, X. C.; Wang, Jian

    2018-04-01

    Two-dimensional (2D) superconducting systems are of great importance for exploring exotic quantum physics. The recent development of fabrication techniques has stimulated studies of high-quality single-crystalline 2D superconductors, where intrinsic properties give rise to unprecedented physical phenomena. Here, we report the observation of Zeeman-type spin-orbit interaction protected superconductivity (Zeeman-protected superconductivity) in 4-monolayer (ML) to 6-ML crystalline Pb films grown on striped incommensurate Pb layers on Si(111) substrates by molecular beam epitaxy. An anomalously large in-plane critical field far beyond the Pauli limit is detected, which can be attributed to the Zeeman-protected superconductivity due to the in-plane inversion symmetry breaking at the interface. Our work demonstrates that, in superconducting heterostructures, the interface can induce Zeeman-type spin-orbit interactions and modulate the superconductivity.

  3. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    International Nuclear Information System (INIS)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-01-01

    The stability of the crystalline phase of binary phase-change Ge x Sb 1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change dT cryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T cryst is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  4. Quantum coherent transport in SnTe topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-09-08

    Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

  5. Magnetic-field induced semimetal in topological crystalline insulator thin films

    International Nuclear Information System (INIS)

    Ezawa, Motohiko

    2015-01-01

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

  6. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

    2015-06-19

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

  7. Influence of crystallinity on CO gas sensing for TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Seeley, Zachary Mark [School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920 (United States); Bandyopadhyay, Amit [School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920 (United States)], E-mail: amitband@wsu.edu; Bose, Susmita [School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920 (United States)

    2009-08-15

    In the present research, carbon monoxide (CO) gas sensing response was studied for TiO{sub 2} thick films calcined and sintered between 700 and 900 deg. C. Crystalline phase, crystallite size, surface area, particle size, and amorphous content were measured for the calcined powder. Crystallinity of the powder was found to affect sensing response significantly towards CO. Anatase phase of TiO{sub 2} thick film was stable up to 900 deg. C however, as calcination temperature increased from 700 to 900 deg. C, surface area and amorphous phase content decreased. Films calcined and sintered at 700 deg. C showed a lower response towards CO than those calcined at 800 deg. C. Upon increasing the calcination temperature further, particle growth and reduced surface area hindered the sensing response. A calcination temperature of 800 deg. C was necessary to achieve sufficient order in the crystal structure leading to more efficient adsorption and desorption of oxygen ions on the surface of TiO{sub 2}.

  8. Sprayed and Spin-Coated Multilayer Antireflection Coating Films for Nonvacuum Processed Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdullah Uzum

    2017-01-01

    Full Text Available Using the simple and cost-effective methods, spin-coated ZrO2-polymer composite/spray-deposited TiO2-compact multilayer antireflection coating film was introduced. With a single TiO2-compact film on the surface of a crystalline silicon wafer, 5.3% average reflectance (the reflectance average between the wavelengths of 300 nm and 1100 nm was observed. Reflectance decreased further down to 3.3% after forming spin-coated ZrO2 on the spray-deposited TiO2-compact film. Silicon solar cells were fabricated using CZ-Si p-type wafers in three sets: (1 without antireflection coating (ARC layer, (2 with TiO2-compact ARC film, and (3 with ZrO2-polymer composite/TiO2-compact multilayer ARC film. Conversion efficiency of the cells improved by a factor of 0.8% (from 15.19% to 15.88% owing to the multilayer ARC. Jsc was improved further by 2 mA cm−2 (from 35.3 mA cm−2 to 37.2 mA cm−2 when compared with a single TiO2-compact ARC.

  9. Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

    Directory of Open Access Journals (Sweden)

    Ching-Tao Li

    2014-01-01

    Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

  10. Lattice damage induced by Tb-implanted AlN crystalline films

    International Nuclear Information System (INIS)

    Lu Fei; Hu Hui; Rizzi, A.

    2002-01-01

    AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

  11. Growth and luminescence properties of Pr3+-doped single crystalline films of garnets and perovskites

    International Nuclear Information System (INIS)

    Gorbenko, V.; Zorenko, Yu.; Savchyn, V.; Zorenko, T.; Pedan, A.; Shkliarskyi, V.

    2010-01-01

    Peculiarities of growth of single crystalline films (SCF) of Pr 3+ doped Y 3 Al 5 O 12 and Lu 3 Al 5 O 12 garnets and YAlO 3 and LuAlO 3 perovskites by the liquid phase epitaxy method from melt-solutions based on PbO-B 2 O 3 flux as well as luminescent and scintillation properties of these SCFs were studied in this work. Dependence the intensity of the Pr 3+ d-f and f-f-luminescence on the activator concentration and influence of Pb 2+ flux dopant on the light yield of SCFs of the mentioned garnets and perovskites were analyzed.

  12. Time-resolved luminescent spectroscopy of YAG:Ce single crystal and single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Vozniak, T.; Puzikov, V.; Danko, A.; Nizhankovski, S.

    2010-01-01

    The peculiarities of the luminescence and energy transfer from YAG host to the emission centers formed by the Y Al antisite defects and Ce 3+ ions have been studied in YAG:Ce single crystals, grown from the melt by modified Bridgman method in Ar and CO 2 + H 2 atmospheres, and YAG:Ce single crystalline film, grown by liquid phase epitaxy method, using the comparative time-resolved luminescent spectroscopy under excitation by synchrotron radiation in the range of fundamental adsorption of this garnet.

  13. Possible pitfalls in search of magnetic order in thin films deposited on single crystalline sapphire substrates

    International Nuclear Information System (INIS)

    Salzer, R.; Spemann, D.; Esquinazi, P.; Hoehne, R.; Setzer, A.; Schindler, K.; Schmidt, H.; Butz, T.

    2007-01-01

    We have studied the field and temperature dependence of the magnetic moment of single crystalline sapphire substrates with different surface orientations. All the substrates show a ferromagnetic behavior that partially changes after surface cleaning. The amount of magnetic impurities in the substrates was determined by particle induced X-ray emission. The overall analysis of the data indicates that the magnetic impurities very likely contribute to the measured ferromagnetic behavior but does not rule out completely intrinsic contributions. Our work stresses the necessity to use other than bulk characterization methods for the study of weak ferromagnetic signals of thin films grown on oxide substrates

  14. Synthesis of Ag and Au nanoparticles embedded in carbon film: Optical, crystalline and topography analysis

    Science.gov (United States)

    Gholamali, Hediyeh; Shafiekhani, Azizollah; Darabi, Elham; Elahi, Seyed Mohammad

    2018-03-01

    Atomic force microscopy (AFM) images give valuable information about surface roughness of thin films based on the results of power spectral density (PSD) through the fast Fourier transform (FFT) algorithms. In the present work, AFM data are studied for silver and gold nanoparticles (Ag NPs a-C: H and Au NPs a-C: H) embedded in amorphous hydrogenated carbon films and co-deposited on glass substrate via of RF-Sputtering and RF-Plasma Enhanced Chemical Vapor Deposition methods. Here, the working gas is acetylene and the targets are Ag and Au. While time and power are constant, the only variable parameter in this study is initial pressure. In addition, the crystalline structure of Ag NPs a-C: H and Au NPs a-C: H are studied using X-ray diffraction (XRD). UV-visible spectrophotometry will also investigate optical properties and localized surface plasmon resonance (LSPR) of samples.

  15. Tuning Eu{sup 3+} emission in europium sesquioxide films by changing the crystalline phase

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal, A., E-mail: antonio.mariscal@csic.es [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain); Quesada, A. [Ceramics for Smart Systems Group, Instituto de Cerámica y Vidrio, C/ Kelsen 5, 28049 Madrid (Spain); Camps, I. [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain); Palomares, F.J. [Instituto de Ciencia de Materiales de Madrid, C/ Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Fernández, J.F. [Ceramics for Smart Systems Group, Instituto de Cerámica y Vidrio, C/ Kelsen 5, 28049 Madrid (Spain); Serna, R. [Laser Processing Group, Instituto de Óptica, CSIC, C/ Serrano 121, 28006 Madrid (Spain)

    2016-06-30

    Highlights: • PLD production of high quality europium sesquioxide (Eu{sub 2}O{sub 3}) films. • The deposition of Al{sub 2}O{sub 3} capping and/or buffer layers modifies the crystallization for Eu{sub 2}O{sub 3} films upon annealing. • The formation of cubic or monoclinic phases can be favored. • Eu{sup 3+} emission tuning is achieved as a consequence of crystal field effects. - Abstract: We report the growth of europium sesquioxide (Eu{sub 2}O{sub 3}) thin films by pulsed laser deposition (PLD) in vacuum at room temperature from a pure Eu{sub 2}O{sub 3} ceramic bulk target. The films were deposited in different configurations formed by adding capping and/or buffer layers of amorphous aluminum oxide (a-Al{sub 2}O{sub 3}). The optical properties, refractive index and extinction coefficient of the as deposited Eu{sub 2}O{sub 3} layers were obtained. X-ray photoelectron spectroscopy (XPS) measurements were done to assess its chemical composition. Post-deposition annealing was performed at 500 °C and 850 °C in air in order to achieve the formation of crystalline films and to accomplish photoluminescence emission. According to the analysis of X-ray diffraction (XRD) spectra, cubic and monoclinic phases were formed. It is found that the relative amount of the phases is related to the different film configurations, showing that the control over the crystallization phase can be realized by adequately designing the structures. All the films showed photoluminescence emission peaks (under excitation at 355 nm) that are attributed to the intra 4f-transitions of Eu{sup 3+} ions. The emission spectral shape depends on the crystalline phase of the Eu{sub 2}O{sub 3} layer. Specifically, changes in the hypersensitive {sup 5}D{sub 0} → {sup 7}F{sub 2} emission confirm the strong influence of the crystal field effect on the Eu{sup 3+} energy levels.

  16. Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hiate, Taiga; Miyauchi, Naoto; Tang, Zeguo; Ishikawa, Ryo; Ueno, Keiji; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676 (Japan)

    2012-10-15

    The electrospray deposition (ESD) of poly(3-hexylthiophene) (P3HT) and conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on P3HT for use in crystalline silicon/organic hybrid heterojunction solar cells on CZ crystalline silicon (c-Si) (100) wafer was investigated using real-time characterization by spectroscopic ellipsometry (SE). In contrast to the nonuniform deposition of products frequently obtained by conventional spin-coating, a uniform deposition of P3HT and PEDOT:PSS films were achieved on flat and textured hydrophobic c-Si(100) wafers by adjusting the deposition conditions. The c-Si/P3HT/PEDOT:PSS heterojunction solar cells exhibited efficiencies of 4.1 and 6.3% on flat and textured c-Si(100) wafers, respectively. These findings suggest that ESD is a promising method for the uniform deposition of P3HT and PEDOT:PSS films on flat and textured hydrophobic substrates. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Systematic study on intermolecular valence-band dispersion in molecular crystalline films

    International Nuclear Information System (INIS)

    Yamane, Hiroyuki; Kosugi, Nobuhiro

    2015-01-01

    Highlights: • Intermolecular valence-band dispersion of crystalline films of phthalocyanines. • Intermolecular transfer integral versus lattice constant. • Site-specific intermolecular interaction and resultant valence-band dispersion. • Band narrowing effect induced by elevated temperature. - Abstract: Functionalities of organic semiconductors are governed not only by individual properties of constituent molecules but also by solid-state electronic states near the Fermi level such as frontier molecular orbitals, depending on weak intermolecular interactions in various conformations. The individual molecular property has been widely investigated in detail; on the other hand, the weak intermolecular interaction is difficult to investigate precisely due to the presence of the structural and thermal energy broadenings in organic solids. Here we show quite small but essential intermolecular valence band dispersions and their temperature dependence of sub-0.1-eV scale in crystalline films of metal phthalocyanines (H_2Pc, ZnPc, CoPc, MnPc, and F_1_6ZnPc) by using angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. The observed bands show intermolecular and site dependent dispersion widths, phases, and periodicities, for different chemical substitution of terminal groups and central metals in the phthalocyanine molecule. The precise and systematic band-dispersion measurement would be a credible approach toward the comprehensive understanding of intermolecular interactions and resultant charge transport properties as well as their tuning by substituents in organic molecular systems.

  18. Branched Crystalline Patterns of Poly(ε-caprolactone) and Poly(4-hydroxystyrene) Blends Thin Films.

    Science.gov (United States)

    Hou, Chunyue; Yang, Tianbo; Sun, Xiaoli; Ren, Zhongjie; Li, Huihui; Yan, Shouke

    2016-01-14

    The chain organization of poly(ε-caprolactone) (PCL) in its blend with poly(4-hydroxystyrene) (PVPh) in thin films (130 ± 10 nm) has been revealed by grazing incident infrared (GIIR) spectroscopy. It can be found that PCL chains orient preferentially in the surface-normal direction and crystallization occurs simultaneously. The morphology of the PCL/PVPh blends films can be identified by optical microscopy (OM). When crystallized at 35 °C, the blends film shows a seaweed-like structure and becomes more open with increasing PVPh content. In contrast, when crystallized at higher temperatures, i.e., 40 and 45 °C, dendrites with apparent crystallographically favored branches can be observed. This characteristic morphology indicates that the diffusion-limited aggregation (DLA) process controls the crystal growth in the blends films. The detailed lamellar structure can be revealed by the height images of atomic force microscopy (AFM), i.e., the crystalline branches are composed of overlayered flat-on lamellae. The branch width has been found to be dependent on the supercooling and PVPh content. This result differs greatly from pure PCL, in which case the crystal patterns controlled by DLA process developed in ultrathin film or monolayers of several nanometers. In the PCL/PVPh blends case, the strong intermolecular interactions and the dilution effect of PVPh should contribute to these results. That is to say, the mobility of PCL chains can be retarded and diffusion of them to the crystal growth front slows down greatly, even though the film thickness is far more than the lamellar thickness of PCL.

  19. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  20. Investigation of electrochemical behaviour and structure of oxide films on Ni60Nb40 alloy in amorphous and crystalline states

    International Nuclear Information System (INIS)

    Tomashov, N.D.; Skvortsova, I.B.; Gorodetskij, A.E.; Bogomolov, D.B.

    1987-01-01

    Electrochemical properties of Ni 60 Nb 40 alloy in amorphous and crystalline states as well as structure of oxide films forming during anode polarization in electrolytes on the surface of this alloy in both its states are investigated. It is stated that increased passive ability of Ni 60 Nb 40 alloys in amorphous state and high efficiency of chlorine evolution (2 n NaCl+HCl up to pH=0) anode process in comparison with crystalline state are defined by increased homogeneity and uniformity of passive films forming on amorphous alloy and their increased electron conductivity, that is in direct dependence on different structure of passive films forming on alloys in amorphous and crystalline states

  1. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    International Nuclear Information System (INIS)

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

    2011-01-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  2. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  3. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    KAUST Repository

    Yang, Zhenqian

    2018-01-10

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

  4. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  5. Controlling compositional homogeneity and crystalline orientation in Bi0.8Sb0.2 thermoelectric thin films

    Directory of Open Access Journals (Sweden)

    C. Rochford

    2015-12-01

    Full Text Available Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1−xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%–95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

  6. Luminescence of Bi3+ ions in Y3Al5O12:Bi single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Voznyak, T.; Vistovsky, V.; Nedilko, S.; Nikl, M.

    2007-01-01

    The absorption and cathodoluminescence spectra of single crystalline films (SCF) of Y 3 Al 5 O 12 :Bi garnet depending on Bi concentration were analyzed. For consideration of the nature of the UV and visible Bi-related emission bands the time-resolved luminescence of Bi 3+ (ns 2 ) ions in YAG:Bi SCF was studied at 10 K under excitation by synchrotron radiation. The difference in the excitation spectra and emission decay of the UV and visible bands has been explained via radiative relaxation from the 3 P 1,0 excited states to the 1 S 0 ground state of the isolated and pair/clustered Bi 3+ emission centers in the garnet lattice, respectively

  7. Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

    2002-07-01

    We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

  8. Thin nanostructured crystalline TiO{sub 2} films and their applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Yajun

    2007-06-15

    Research on thin nanostructured crystalline TiO{sub 2} films has attracted considerable interests because of their intriguing physical properties and potential applications in photovoltaics. Nanostructured TiO{sub 2} film plays an important role in the TiO{sub 2} based dye-sensitized solar cells because they act as a substrate for the adsorption of dye molecules and a matrix for the transportation of electrons as well. Thus they can influence the solar cell performance significantly. Consequently, the control of the morphology including the shape, size and size distribution of the TiO{sub 2} nanostructures is critical to tune and optimize the performance of the solar cells. To control the TiO{sub 2} morphology, a strategy using amphiphilic block copolymer as templating agent coupled with sol-gel chemistry has been applied. Especially, a good-poor solvent pair induced phase separation process has been developed to guide the microphase separation behavior of the block copolymers. The amphiphilic block copolymers used include polystyrene-block-poly (ethylene oxide) (PS-b-PEO), poly (methyl methacrylate)-block-poly (ethylene oxide) (PMMA-b-PEO), and poly (ethylene oxide)-block-polystyrene-block-poly (ethylene oxide) (PEO-b-PS-b-PEO). The block copolymer undergoes a good-poor-solvent pair induced phase separation in a mixed solution of 1, 4-dioxane or N, N-dimethyl formamide (DMF), concentrated hydrochloric acid (HCl) and Titanium tetraisopropoxide (TTIP). Specifically, in the system of PS-b-PEO, a morphology phase diagram of the inorganic-copolymer composite films was mapped by adjusting the weight fractions among 1, 4-dioxane, HCl, and TTIP in solution. The amorphous TiO{sub 2} within the titania-block copolymer composite films was crystallized by calcination at temperatures above 400 C, where the organic block copolymer was simultaneously burned away. This strategy is further extended to other amphiphilic block copolymers of PMMA-b-PEO and PEO-b-PS-b-PEO, where the

  9. Optical properties of zirconium oxynitride films: The effect of composition, electronic and crystalline structures

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Rodrigues, M.S. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Espinós, J.P.; González-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-University Sevilla), Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Cunha, L.; Marques, L.; Vasilevskiy, M.I.; Vaz, F. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Optical behaviour of ZrO{sub x}N{sub y} films were correlated with structural properties. • A continuous depopulation of the d-band and an opening of an energy gap was observed. • Drude–Lorentz parameters changed for the metallic samples. • Optical bandgap of the films increases with non-metallic elements incorporation. - Abstract: This work is devoted to the investigation of zirconium oxynitride (ZrO{sub x}N{sub y}) films with varied optical responses prompted by the variations in their compositional and structural properties. The films were prepared by dc reactive magnetron sputtering of Zr, using Ar and a reactive gas mixture of N{sub 2} + O{sub 2} (17:3). The colour of the films changed from metallic-like, very bright yellow-pale and golden yellow, for low gas flows to red-brownish for intermediate gas flows. Associated to this colour change there was a significant decrease of brightness. With further increase of the reactive gas flow, the colour of the samples changed from red-brownish to dark blue or even to interference colourations. The variations in composition disclosed the existence of four different zones, which were found to be closely related with the variations in the crystalline structure. XRD analysis revealed the change from a B1 NaCl face-centred cubic zirconium nitride-type phase for films prepared with low reactive gas flows, towards a poorly crystallized over-stoichiometric nitride phase, which may be similar to that of Zr{sub 3}N{sub 4} with some probable oxygen inclusions within nitrogen positions, for films prepared with intermediate reactive gas flows. For high reactive gas flows, the films developed an oxynitride-type phase, similar to that of γ-Zr{sub 2}ON{sub 2} with some oxygen atoms occupying some of the nitrogen positions, evolving to a ZrO{sub 2} monoclinic type structure within the zone where films were prepared with relatively high reactive gas flows. The analysis carried out by reflected electron energy

  10. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  11. Luminescent properties of LuAG:Yb and YAG:Yb single crystalline films grown by Liquid Phase Epitaxy method

    International Nuclear Information System (INIS)

    Zorenko, Yu; Zorenko, T.; Gorbenko, V.; Voznyak, T.; Popielarski, P.; Batentschuk, M.; Osvet, A.; Brabec, Ch; Kolobanov, V.; Spasky, D.; Fedorov, A.

    2016-01-01

    In this work, investigation of the spectroscopic parameters of the luminescence of Yb"3"+ ions in single crystalline films of Lu_3Al_5O_1_2 and Y_3Al_5O_1_2 garnets was performed using the synchrotron radiation excitation with the energy in the range of Yb"3"+ charge transitions (CT), exciton range and the onset of interband transitions of these garnets. The basic spectroscopic parameters of the Yb"3"+ CT luminescence in LuAG and YAG hosts were determined and summarized with taking into account the differences in the band gap structure of these garnets. - Highlights: • Single crystalline films of Yb doped LuAG and YAG garnets were grown by LPE method. • Yb"3"+ luminescence of LuAG:Yb and YAG:Yb film were studied using synchrotron radiation. • Basic parameters of Yb"3"+ charge transfer luminescence in LuAG and YAG were determined.

  12. Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

    Science.gov (United States)

    Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

    2018-03-01

    The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated

  13. Effect of praseodymium dopants on the optical, crystallinity and electrochemical properties of poly(vinylalcohol) films fayez

    International Nuclear Information System (INIS)

    Ali, M.; Amwar, Z.M.

    2005-01-01

    Pure Poly(vinylalcohol) (Pva) films and doped with Praseodymium (Pr) in the concentration range of 5-30% weight/weight (w/w) were prepared by a casting technique. Optical transmission measurements were performed on the prepared samples, where an interesting feature is the enhancement of the transmission over 100% due to the incorporation of the Pr in the Pva films. The refractive indices of the studied doped films were general lower than that of the pure Pva. On adding Pr to the Pva the films become more crystalline due to the coordination of the lanthanide metal ion (Pr) to the Oxygen of the Pva side chain. The doped Pva samples exhibit different electrochemical behaviour through the cyclic voltammetry (C V) and square wave voltammetry (Sv) than the pure Pva sample. It was found that the corrosion behavior of the doped Pva films in the seawater is less than the pure Pva in the same environment

  14. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  15. C-Ni-Pd and CNT-Ni-Pd film's molecular and crystalline structure investigations by FTIR spectroscopy and XRD diffraction

    Science.gov (United States)

    Stepińska, Izabela; Czerwosz, ElŻbieta; Diduszko, Ryszard; Kozłowski, Mirosław; Wronka, Halina

    2017-08-01

    In this work molecular and crystalline structure of new type of nanocomposite films were investigated. These films compose of CNT decorated with palladium nanograins. They were prepared on a base of C-Ni films modified in CVD process. C-Ni nanocomposite films were obtained by PVD process and their modification by CVD leads to a growth of CNT film. CNTs-Ni or C-Ni films were treated with additional PVD process with palladium. Nickel and palladium acetate and fulleren C60 are precursors of films in PVD process. FTIR spectroscopy was used to studied the molecular structure of film in every stage of preparation . The crystalline structure of these films was studied by X-ray diffraction. SEM (scanning electron microscopy) was applied to investigate film's surface topography.

  16. Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

    Science.gov (United States)

    Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2017-11-01

    Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure

    Science.gov (United States)

    Liu, Xiaohui; Xu, Meng; Zhang, Xijian; Wang, Weiguang; Feng, Xianjin; Song, Aimin

    2018-03-01

    Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)∥MgO (110) with Cu2O (001)∥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm2 v-1 s-1.

  18. The influence of metal interlayers on the structural and optical properties of nano-crystalline TiO 2 films

    KAUST Repository

    Yang, Yong

    2012-03-01

    TiO 2-M-TiO 2 (M = W, Co and Ag) multilayer films have been deposited on glass substrates using reactive magnetron sputtering, then annealed in air for 2 h at 500°C. The structure, surface morphology and optical properties of the films have been studied using X-ray diffraction, Raman spectroscopy, atomic force microscopy and UV-vis spectroscopy. The TiO 2-W-TiO 2 and TiO 2-Co-TiO 2 films showed crystalline phases, whereas the TiO 2-Ag-TiO 2 films remained in the amorphous state. The crystallization temperature for the TiO 2-M-TiO 2 films decreased significantly compared with pure TiO 2 film deposited on quartz. Detailed analysis of the Raman spectra suggested that the crystallization of TiO 2-M-TiO 2 films was associated with the large structural deformation imposed by the oxidation of intermediate metal layers. Moreover, the optical band gap of the films narrowed due to the appearance of impurity levels as the metal ions migrated into the TiO 2 matrix. These results indicate that the insertion of intermediate metal layers provides a feasible access to improve the structural and optical properties of anatase TiO 2 films, leading to promising applications in the field of photocatalysis. © 2011 Elsevier B.V. All rights reserved.

  19. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  20. Novel UV-emitting single crystalline film phosphors grown by LPE method

    International Nuclear Information System (INIS)

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J.A.; Winnacker, A.

    2010-01-01

    This work reports the development of new types of UV-emitting phosphors based on single crystalline films (SCF) of aluminum garnet and perovskite compounds grown by the liquid phase epitaxy method. We consider peculiarities of the growth and the luminescent and scintillation properties of the following four types of UV SCF phosphors: i) Ce-doped SCF of Y-Lu-Al-perovskites with the Ce 3+ emission in the 300-450 nm range of the decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets and perovskites with the Pr 3+ emission in the 300-400 nm and 235-330 nm ranges with the decay time of 13-19 and 7-8 ns, respectively; iii) La 3+ or Sc 3+ doped SCF of Y-Lu-Al-garnets, emitting in the 280-400 nm range due to formation of the La Y,Lu , Sc Y,Lu and Sc Al centers with decay time of the order of several hundreds of nanoseconds; iv) Bi 3+ doped SCF of garnets with Bi 3+ emission in 275-350 nm with decay time of about 1.9 μs.

  1. Ortho-positronium annihilation parameters in polyvinyl alcohol films with various degrees of polymerization, saponification and crystallinity

    International Nuclear Information System (INIS)

    Muramatsu, Hisakazu; Matsumoto, Kuniyuki; Minekawa, Sachiko; Yagi, Yukiko; Sasai, Shigenori

    2001-01-01

    Positron annihilation lifetime (PAL) spectroscopy has been applied to polyvinyl alcohol (PVA) films prepared with commercially available PVA or from polyvinyl acetate (PVac). The variation of lifetimes of ortho-positronium (o-Ps) formed in the films was investigated as a function of the degrees of polymerization, saponification, or crystallinity. For the fully saponificated samples, no dependence was found to exist on the degrees of polymerization or of crystallinity. For the partially saponificated samples, however, the dependence of the o-Ps lifetime on the degree of saponification was clearly observed, and this is explained by both the formation of hydrogen bonds among the polymer chains and the existence of acetyl group strongly inhibiting the hydrogen-bond formation due to steric hindrance. (orig.)

  2. Demonstration of thin film pair distribution function analysis (tfPDF for the study of local structure in amorphous and crystalline thin films

    Directory of Open Access Journals (Sweden)

    Kirsten M. Ø. Jensen

    2015-09-01

    Full Text Available By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF analysis have been obtained from thin films (tf, suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The `tfPDF' method is illustrated through studies of as-deposited (i.e. amorphous and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.

  3. Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

    Science.gov (United States)

    Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

    2014-08-01

    A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

  4. Appearance of large crystalline domains in VO{sub 2} films grown on sapphire (001) and their phase transition characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Su, Kui; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

    2015-06-28

    We report the first observation of large crystalline domains of several μm-size in VO{sub 2} films deposited on Al{sub 2}O{sub 3} (001) substrates by rf-biased reactive sputtering technique. The large crystalline domains, dominated with random in-plane oriented growth of (011){sub M1}-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result in conventional nanosized grains of highly oriented (010){sub M1}-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts of large crystalline domains undergo intermediate monoclinic (M2) phase during the thermally-induced structural phase transition from monoclinic (M1) to rutile-tetragonal (R) phase. As an effect of the appearance of large crystalline domains, the film showed in-plane tensile stress, resulting in high T{sub IMT} of 69 °C due to the elongation of the V-V distance in its low-temperature monoclinic phase.

  5. Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Qamar, Afzaal, E-mail: afzaalqamar@gmail.com [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics, Nilore, Islamabad (Pakistan); Sarwar, Tuba; Ahmed, Nadeem [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan)

    2011-05-15

    Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional {theta}-2{theta} mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.

  6. Synthesis and crystalline properties of CdS incorporated polyvinylidene fluoride (PVDF) composite film

    Science.gov (United States)

    Patel, Arunendra Kumar; Sunder, Aishwarya; Mishra, Shweta; Bajpai, Rakesh

    2018-05-01

    This paper gives an insight on the synthesis and crystalline properties of Polyvinylidene Fluoride (PVDF) (host matrix) composites impregnated with Cadmium Sulphide (CdS) using Dimethyl formamide (DMF) as the base, prepared by the well known solvent casting technique. The effect of doping concentration of CdS in to the PVDF matrix was studied using X-ray diffraction technique. The structural properties like crystallinity Cr, interplanar distance d, average size of the crystalline region (D), and average inter crystalline separation (R) have been estimated for the developed composite. The crystallinity index, crystallite size and inter crystalline separation is increasing with increase in the concentration of CdS in to the PVDF matrix while the interplanar distance d is decreasing.

  7. Competitive concurrence of surface wrinkling and dewetting of liquid crystalline polymer films on non-wettable substrates.

    Science.gov (United States)

    Song, Sung E; Choi, Gwan H; Yi, Gi-Ra; Yoo, Pil J

    2017-11-01

    Polymeric thin films coated on non-wettable substrates undergo film-instabilities, which are usually manifested as surface deformation in the form of dewetting or wrinkling. The former takes place in fluidic films, whereas the latter occurs in solid films. Therefore, there have rarely been reports of systems involving simultaneous deformations of dewetting and wrinkling. In this study, we propose polymeric thin films of liquid crystalline (LC) mesogens prepared on a non-wettable Si substrate and apply a treatment of plasma irradiation to form a thin polymerized layer at the surface. The resulting compressive stress generated in the surface region drives the formation of wrinkles, while at the same time, dipolar attraction between LC molecules induces competitive cohesive dewetting. Intriguing surface structures were obtained whereby dewetting-like hole arrays are nested inside the randomly propagated wrinkles. The structural features are readily controlled by the degree of surface cross-linking, hydrophilicity of the substrates, and the LC film thickness. In particular, dewetting of LC mesogens is observed to be restricted to occur at the trough regions of wrinkles, exhibiting the typical behavior of geometrically confined dewetting. Finally, wrinkling-dewetting mixed structures are separated from the substrate in the form of free standing films to demonstrate the potential applicability as membranes.

  8. V6O13 films by control of the oxidation state from aqueous precursor to crystalline phase.

    Science.gov (United States)

    Peys, Nick; Ling, Yun; Dewulf, Daan; Gielis, Sven; De Dobbelaere, Christopher; Cuypers, Daniel; Adriaensens, Peter; Van Doorslaer, Sabine; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

    2013-01-28

    An aqueous deposition process for V(6)O(13) films is developed whereby the vanadium oxidation state is continuously controlled throughout the entire process. In the precursor stage, a controlled wet chemical reduction of the vanadium(V) source with oxalic acid is achieved and monitored by (51)Vanadium Nuclear Magnetic Resonance ((51)V-NMR) and Ultraviolet-Visible (UV-Vis) spectroscopy. The resulting vanadium(IV) species in the aqueous solution are identified as mononuclear citrato-oxovanadate(IV) complexes by Electron Paramagnetic Resonance (EPR) and Fourier Transform Infra-Red (FTIR) spectroscopy. This precursor is successfully employed for the deposition of uniform, thin films. The optimal deposition and annealing conditions for the formation of crystalline V(6)O(13), including the control of the vanadium oxidation state, are determined through an elaborate study of processing temperature and O(2) partial pressure. To ensure a sub 100 nm adjustable film thickness, a non-oxidative intermediate thermal treatment is carried out at the end of each deposition cycle, allowing maximal precursor decomposition while still avoiding V(IV) oxidation. The resulting surface hydrophilicity, indispensable for the homogeneous deposition of the next layer, is explained by an increased surface roughness and the increased availability of surface vanadyl groups. Crystalline V(6)O(13) with a preferential (002) orientation is obtained after a post deposition annealing in a 0.1% O(2) ambient for thin films with a thickness of 20 nm.

  9. Depth-resolution imaging of crystalline nanoclusters attached on and embedded in amorphous films using aberration-corrected TEM

    Energy Technology Data Exchange (ETDEWEB)

    Yamasaki, Jun, E-mail: yamasaki@uhvem.osaka-u.ac.jp [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mori, Masayuki [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Hirata, Akihiko [Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Hirotsu, Yoshihiko [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-04-15

    For observations of crystalline nanoclusters, the features and capabilities of depth-resolution imaging by aberration-corrected transmission electron microscopy (TEM) were investigated using image simulations and experiments for two types of samples. The first sample was gold clusters attached on an amorphous carbon film. The experimental through-focal series indicated that the focal plane for the cluster was shifted 3 nm from that for the supporting film. This difference is due to the depth-resolution imaging of the cluster and film, the mid-planes of which are separated by 3 nm along the depth direction (the electron incident direction). On the basis of this information, the three-dimensional configuration of the sample, such as the film thickness of 2 nm, was successfully illustrated. The second sample was a Zr{sub 66.7}Ni{sub 33.3} metallic glass including a medium-range-order (MRO) structure, which was approximately considered to be a crystalline cluster with a diameter of 1.6 nm. In the experimental through-focal series, the lattice fringe of the MRO cluster was visible at limited focal conditions. Image simulations reproduced well the focal conditions and also indicated a structural condition for the visualization that the embedded cluster must be apart from the mid-plane of the matrix film. Similar to the case of the first sample, this result can be explained by the idea that the “effective focal planes” for the film and cluster are at different heights. This type of depth-resolution phase contrast imaging is possible only in aberration-corrected TEM and when the sample has a simple structure and is sufficiently thin for the kinematical scattering approximation. - Highlights: • Depth-resolution imaging by aberration-corrected TEM was demonstrated. • Thickness of a carbon film supporting gold nano-crystals was successfully estimated. • A crystalline nanocluster embedded in an amorphous matrix was successfully observed. • It was clarified that

  10. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  11. Synthesis and properties of crystalline thin film of antimony trioxide on the Si(1 0 0) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Yasir, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Kuzmin, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Punkkinen, M.P.J.; Mäkelä, J.; Tuominen, M.; Dahl, J. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Laukkanen, P., E-mail: pekka.laukkanen@utu.fi [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Kokko, K. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)

    2015-09-15

    Highlights: • Formation of crystalline phase of Sb{sub 2}O{sub 3} on Si(1 0 0) is demonstrated. • STM and STS characterizations of the grown Sb{sub 2}O{sub 3} film are presented. • STS results elucidate the band gap of Sb{sub 2}O{sub 3}. • Ab initio calculations reveal energetically favored Sb{sub 2}O{sub 3} surface structures. - Abstract: Atomic-scale understanding and processing of the surface and interface properties of antimony trioxide (Sb{sub 2}O{sub 3}) are essential to the development of nanoscale Sb{sub 2}O{sub 3} materials for various applications, such as photocatalysts, transparent conducting oxides, optical coatings, dielectric films, and fire retardants. Lack of atomically well-defined, crystalline Sb{sub 2}O{sub 3} templates has however hindered atomic resolution characterization of the Sb{sub 2}O{sub 3} properties. We report the preparation of crystalline Sb{sub 2}O{sub 3} thin films on the Si(1 0 0) substrate with a simple process by oxidizing Sb-covered Si(1 0 0) in proper conditions. Physical properties of the synthesized films have been elucidated by low-energy electron diffraction, scanning tunneling microscopy and spectroscopy, and ab initio calculations. The spectroscopic results show that the band gap of Sb{sub 2}O{sub 3} is 3.6 eV around the gamma point (i.e. Γ). Calculations reveal energetically favored Sb{sub 2}O{sub 3}(1 0 0) surface structures. The findings open a new path for the atomic-scale research of Sb{sub 2}O{sub 3}.

  12. Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Shakil Khan

    2015-08-01

    Full Text Available DC reactive magnetron sputtering technique has been used for the preparation of AlN thin films. The deposition temperature and the flow ratio of N2/Ar were varied and subsequent dependency of the films crystallites orientation/texture has been addressed. In general, deposited films were found hexagonal polycrystalline with a (002 preferred orientation. The X-ray diffraction (XRD data revealed that the film crystallinity improves, with the increase of substrate temperature from 300 °C to 500 °C. The dropped in full width half maximum (FWHM of the XRD rocking curve value further confirmed it. However, increasing substrate temperature above 500 °C or reducing the nitrogen condition (from 60 to 30% in the environment induced the growth of crystallites with (102 and (103 orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the films texture quality deteriorated. A further confirmation of the variation in film texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1 (TO mode in the Fourier transform infrared (FTIR spectra and the E2 (high mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the (002 or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500 °C growth temperature.

  13. Broadband near infrared quantum cutting in Bi–Yb codoped Y2O3 transparent films on crystalline silicon

    International Nuclear Information System (INIS)

    Qu Minghao; Wang Ruzhi; Chen Yan; Zhang Ying; Li Kaiyu; Yan Hui

    2012-01-01

    By a pulsed laser deposition technique the efficient broadband near-infrared downconversion Bi–Yb codoped crystallization Y 2 O 3 transparent films have been grown successfully on Si (1 0 0) substrates. Upon excitation of ultraviolet photon varying from 300 to 400 nm, the near infrared quantum cutting has been obtained, which is originated from the transitions of the transition-metal Bi 3+3 P 1 level to Yb 3+2 F 5/2 level. The downconversion quantum efficiency of films is estimated to be 152%. The transparent Y 2 O 3 films may have potential application in enhancing the conversion efficiency of crystalline Si solar cells. - Highlights: ► The downconversion Y 2 O 3 :Bi,Yb films has good transparency. ► Y 2 O 3 :Bi,Yb films possess a broadband absorption in the UV region of 300–400 nm. ► The films may have potential application in enhancing the efficiency of c-Si cells.

  14. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  15. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  16. Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Geun-Hyoung

    2013-01-01

    Ga-doped ZnO(GZO) thin films were deposited on the quartz substrate by magnetron sputtering system with growth interruption technique. As the number of interruptions and interruption time increased, the carrier concentration and Hall mobility in GZO films significantly increased. As a result, the resistivity of GZO films decreased. The optical transmittance of GZO films also increased with the number of interruption and interruption time. The transmittance showed over 90% in visual region. Atomic force microscopy measurement showed that the film surface became smoother with an increase of the number of interruption. In addition, the crystalline quality and electrical properties of GZO films were more improved when the growth interruption was employed with a temperature gradient. - Highlights: • Ga-doped ZnO thin films were deposited with growth interruption technique. • The crystallinity of the films was improved with the number of interruptions. • The crystallinity of the films was improved as the interruption time increased. • The growth interruption with a temperature gradient more improved the film quality

  17. Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD

    International Nuclear Information System (INIS)

    Kosku, N.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2005-01-01

    We have investigated the effect of substrate bias on the microcrystalline film growth from inductively-coupled plasma (ICP) of H 2 -diluted SiH 4 at 250 deg. C to get an insight on the role of ion and electron incidence for the crystallization. By applying dc bias voltage to the substrate in the range of -20 ∼ 20 V during the film growth, the crystallinity is improved significantly with no significant change in the deposition rate, but in contrast the application of biases as high as ±50 V degrades the crystallinity. These results indicate that the incidence of ions or electrons with a moderate energy to the growing film surface promotes the nucleation and the growth of crystallites. Also, the optimum bias condition for the crystallization is changed with the antenna-substrate distance, which suggests the contribution of hydrogen radical flux to the crystalline film growth

  18. Luminescence of La3+ and Sc3+ impurity centers in YAlO3 single-crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Voznyak, T.; Zorenko, T.; Nikl, M.; Nejezchleb, K.

    2008-01-01

    The luminescence of La Y 3+ and Sc Y 3+ and Sc Al 3+ centers created by lanthanum and scandium ions at Y 3+ and Al 3+ cation sites of YAlO 3 perovskite lattice was investigated. The features of emission of excitons localized at the mentioned centers in YAlO 3 :La and YAlO 3 :Sc single-crystalline films were analyzed by means of time-resolved emission spectroscopy and luminescence decay kinetics measurements under excitation by synchrotron radiation at 9 and 300 K

  19. Predicting the optimal process window for the coating of single-crystalline organic films with mobilities exceeding 7 cm2/Vs.

    Science.gov (United States)

    Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2016-09-01

    Organic thin film transistors (OTFTs) based on single crystalline thin films of organic semiconductors have seen considerable development in the recent years. The most successful method for the fabrication of single crystalline films are solution-based meniscus guided coating techniques such as dip-coating, solution shearing or zone casting. These upscalable methods enable rapid and efficient film formation without additional processing steps. The single-crystalline film quality is strongly dependent on solvent choice, substrate temperature and coating speed. So far, however, process optimization has been conducted by trial and error methods, involving, for example, the variation of coating speeds over several orders of magnitude. Through a systematic study of solvent phase change dynamics in the meniscus region, we develop a theoretical framework that links the optimal coating speed to the solvent choice and the substrate temperature. In this way, we can accurately predict an optimal processing window, enabling fast process optimization. Our approach is verified through systematic OTFT fabrication based on films grown with different semiconductors, solvents and substrate temperatures. The use of best predicted coating speeds delivers state of the art devices. In the case of C8BTBT, OTFTs show well-behaved characteristics with mobilities up to 7 cm2/Vs and onset voltages close to 0 V. Our approach also explains well optimal recipes published in the literature. This route considerably accelerates parameter screening for all meniscus guided coating techniques and unveils the physics of single crystalline film formation.

  20. Optical analysis of the fine crystalline structure of artificial opal films.

    Science.gov (United States)

    Lozano, G; Dorado, L A; Schinca, D; Depine, R A; Míguez, H

    2009-11-17

    Herein, we present a detailed analysis of the structure of artificial opal films. We demonstrate that, rather than the generally assumed face centered cubic lattice of spheres, opal films are better approximated by rhombohedral assemblies of distorted colloids. Detailed analysis of the optical response in a very wide spectral range (0.4 opal films is provided, as well as of the photonic band structure of the proposed arrangement. The implications of this distortion in the optical response of the lattice are discussed.

  1. Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

    Science.gov (United States)

    Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

    Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

  2. Dependence of critical current density on crystalline direction in thin YBCO films

    DEFF Research Database (Denmark)

    Paturi, P.; Peurla, M.; Raittila, J.

    2005-01-01

    The dependence of critical current density (J(c)) on the angle between the current direction and the (100) direction in the ab-plane of thin YBCO films deposited on (001)-SrTiO3 from natiocrystalline and microcrystalline targets is studied using magneto-optical microscopy. In the films made from...... the nanocrystalline target it is found that J(c) does not depend on the angle whereas J(c) decreases with increasing angle in the films made from the microcrystalline target. The films were characterized by detailed X-ray diffraction measurements. The findings are explained in terms of a network of planar defects...

  3. Highly crystalline p-PbS thin films with tunable optical and hole transport parameters by chemical bath deposition

    International Nuclear Information System (INIS)

    Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2017-01-01

    Lead sulfide (PbS) thin films, consisting of well faceted (up to 400 nm) cubic-nanocrystals and possessing significantly improved opto-electronic parameters essential for photovoltaic applications, are grown by utilizing chemical bath deposition (CBD) technique with bath concentrations of 10–200 mM. X-ray diffraction (XRD) and Raman studies confirm the highly crystalline and pure phase of PbS. FESEM and HRTEM studies show that all the films possess uniform and compact (111) oriented nanocubic morphology. Bath concentration change provides tunability of nanocube size from 100 to 400 nm and the direct optical band gap from 1.50 to 0.94 eV. The PbS films exhibit p-type semiconducting behavior with hitherto unreported concurrent highest mobility of 29.3 cm"2V"−"1s"−"1 and high carrier concentration of ∼10"1"8 cm"−"3 with the lowest room temperature resistivity of 0.26 Ω–cm. The 25 mM and 10 mM films show significant surface plasmon absorption in 1200–2400 nm range making them suitable as efficient infrared absorbers in excitonic and multi-junction solar cells.

  4. Critical current densities amd pinning mechanisms of high-Tc films on single crystalline and technologically relevant substrates. Final report

    International Nuclear Information System (INIS)

    Adrian, H.

    1995-12-01

    The report deals with six project tasks: (1) Effects of impurity additions at atomic level on the pinning behaviour and the critical current densities, examined in epitactic YBA 2 (Cu 1-x Ni x ) 3 O 7 films. It could be proven that the Ni atoms increase the activation energy for flux movement and the critical current density in a concentration range of 0 2 Sr 2 Ca n-1 Cu n O 2n+4+δ films (n = 2 and 3) with good crystalline properties, high critical currents, and high current densities were prepared. Thin YBa 2 Cu 3 O 7 films of high quality could be grown on saphire substrates, both by the MO-CVD process and by MBE. The aim of depositing biaxially textured YBa 2 Cu 3 O 7 films with high critical current densities on polycrystalline, metallic substrates was achieved by the IBAD process combined with MBE. The buffer layer was YSZ. Heterostructures of the layer sequence YBa 2 Cu 3 O 7 /CeO 2 /Y 0.3 Pr 0.7 Ba 2 Cu 3 O 7 /YBa 2 Cu 3 O 7 and YBa 2 Cu 3 O 7 /CeO 2 /Au were prepared by laser ablation and sputtering processes, in order to examine Josephson ramp contacts and superconducting field-effect transistors. (orig./MM) [de

  5. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  6. Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

    Science.gov (United States)

    Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

    2018-03-01

    Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

  7. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    Science.gov (United States)

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  8. Enhancing upconversion emission of Er, Yb co-doped highly transparent YF3 films by synergistic tuning nano-textured morphology and crystallinity

    International Nuclear Information System (INIS)

    Qu, Ming-Hao; Wang, Ru-Zhi; Chen, Yan; Zhang, Ying; Li, Kai-Yu; Zhou, Hua; Yan, Hui

    2014-01-01

    Highly transparent Er, Yb codoped YF 3 upconversion films were successfully prepared by electron beam deposition method. The effects of the substrate temperature on the morphology, crystallinity and emission characteristics of Er, Yb codoped YF 3 films were studied carefully. It was found that the morphology and crystallinity varied from smooth amorphous to root-intertwined polycrystalline structure with the substrate temperature increase. Besides, the emission characteristics of the films can be modulated by the synergy of their surface morphologies and crystallinities. Remarkably, a large enhancement of the upconversion emission, up to five decades while only an insignificant decrease of the optical transmittance (10% at most), was achieved by forming root-intertwined polycrystalline structures. These highly transparent upconversion films may have good potential for enhancing the conversion efficiency of wide band-gap solar cells. -- Highlights: • Er, Yb co-dopedYF 3 upconversion films have been successfully prepared. • The upconversion property can be modulated by morphology and crystallinity. • The upconversion transparent YF 3 films are promising for solar cells applications

  9. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  10. Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

    International Nuclear Information System (INIS)

    Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

    2012-01-01

    The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

  11. Influence of lead-related centers on luminescence of Ce3+ and Pr3+ centers in single crystalline films of aluminium perovskites and garnets

    International Nuclear Information System (INIS)

    Babin, V.; Gorbenko, V.; Krasnikov, A.; Makhov, A.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

    2010-01-01

    Luminescence characteristics of Ce 3+ - and Pr 3+ -doped aluminium perovskite (LuAlO 3 , YAlO 3 ) and garnet (Lu 3 Al 5 O 12 , Y 3 Al 5 O 12 ) single crystalline films, prepared by the liquid phase epitaxy method with the use of the PbO-based flux, were investigated by the time-resolved spectroscopy methods in the 80-300 K temperature range. The influence of various lead-related centers on the characteristics of the Ce 3+ - and Pr 3+ -related luminescence centers was studied. It was found that the presence of lead-related centers in the single crystalline films results in a decrease of the quantum efficiency and appearance of undesirable slow components in the luminescence decay kinetics. The possibilities of improving the scintillation characteristics of the single crystalline films were considered.

  12. Amorphous and crystalline In_2O_3-based transparent conducting films for photovoltaics

    International Nuclear Information System (INIS)

    Koida, Takashi

    2017-01-01

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In_2O_3 (In_2O_3:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In_2O_3:H films grown by magnetron sputtering. The polycrystalline (poly-) In_2O_3:H films exhibited electron mobilities (over 100 cm"2V"-"1 s"-"1) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In_2O_3-based TCO; (ii) the structural and optoelectrical properties of the a-In_2O_3:H and poly-In_2O_3:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2015-05-01

    Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  14. Crystalline and electronic structure of epitaxial γ-Al2O3 films

    International Nuclear Information System (INIS)

    Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

    2013-01-01

    Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

  15. Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

    International Nuclear Information System (INIS)

    Zapata-Torres, M.; Chale-Lara, F.; Caballero-Briones, F.; Calzadilla, O.

    2005-01-01

    Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    International Nuclear Information System (INIS)

    Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2010-01-01

    Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

  17. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  18. Diffusion of phonons through (along and across) the ultrathin crystalline films

    Science.gov (United States)

    Šetrajčić, J. P.; Jaćimovski, S. K.; Vučenović, S. M.

    2017-11-01

    Instead of usual approach, applying displacement-displacement Green's functions, the momentum-momentum Green's functions will be used to calculate the diffusion tensor. With this type of Green's function we have calculated and analyzed dispersion law in film-structures. A small number of phonon energy levels along the direction of boundary surfaces joint of the film are discrete-ones and in this case standing waves could occur. This is consequence of quantum size effects. These Green's functions enter into Kubo's formula defining diffusion properties of the system and possible heat transfer direction through observed structures. Calculation of the diffusion tensor for phonons in film-structure requires solving of the system of difference equations. Boundary conditions are included into mentioned system through the Hamiltonian of the film-structure. It has been shown that the diagonal elements of the diffusion tensor express discrete behavior of the dispersion law of elementary excitations. More important result is-that they are temperature independent and that their values are much higher comparing with bulk structures. This result favors better heat conduction of the film, but in direction which is perpendicular to boundary film surface. In the same time this significantly favors appearance 2D superconducting surfaces inside the ultra-thin crystal structure, which are parallel to the boundary surface.

  19. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO{sub 2} thin films grown by atomic layer deposition at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: babaisps@rrcat.gov.in [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Ajimsha, R.S. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Rajiv, K.; Mukherjee, C. [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Gupta, M. [UGC-DAE Consortium, Indore Centre, Khandwa Road, Indore 452017 (India); Misra, P.; Kukreja, L.M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-10-01

    Highlights: • Refractive index was found to be increased from amorphous to the nanocrystalline films. • Refractive index was found to be inversely proportional with growth per cycle. • Large-grained anatase films showed lower refractive indices than the amorphous films. • Roughness was taken into consideration due to the columnar growths of crystalline films. - Abstract: TiO{sub 2} thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (T{sub s}) in a wide range (50 °C ≤ T{sub s} ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (T{sub s} ≤ 150 °C) to the nanocrystalline films (250{sup 0} < T{sub s} ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple–DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  20. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  1. Analysis of the crystalline characteristics of nc-Si:H thin film using a hyperthermal neutral beam generated by an inclined slot-excited antenna

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong-Bae; Kim, Young-Woo; Kim, Dae Chul; Kim, Jongsik; Hong, Seung Pyo; Yoo, Suk Jae; Oh, Kyoung Suk, E-mail: ksoh@nfri.re.kr

    2013-11-29

    The deposition of hydrogenated nano-crystal silicon (nc-Si:H) thin film for manufacturing quantum dot solar cells, which has received attention due to the use of this film third-generation solar cells, is studied here. A hyperthermal neutral beam (HNB) generated by an inclined slot-excited antenna plasma source is used to reduce damage to the silicon thin film and deposition of the crystalline thin film is carried out on a substrate at a low temperature (< 200 °C). The size and the crystalline fraction of the nc-Si:H of the deposited thin film were analyzed by scanning transmission electron microscopy and a Raman microscope. As a result, silicon crystals 1–10 nm in size were observed in the amorphous silicon matrix. According to previous studies, the size and the crystalline fraction of nc-Si:H in deposited thin films increase as the hydrogen flow rate is increased. However, the increment of hydrogen flow rate decreases the deposition rate rapidly. The size and the crystalline fraction of nc-Si:H are adjustable by varying the substrate temperature and HNB energy without a change of the hydrogen flow rate. There are optimum conditions between the HNB energy and the substrate temperature for an appropriate amount of nc-Si:H in silicon thin film. - Highlights: • The appropriate hyperthermal neutral beam energy seems to assist film formation. • The Si crystal size can be adjusted by varying hyperthermal neutral beam energy. • The nc-Si:H 1 ∼ 10 in nm size was observed in the amorphous silicon matrix.

  2. General Space-Confined On-Substrate Fabrication of Thickness-Adjustable Hybrid Perovskite Single-Crystalline Thin Films.

    Science.gov (United States)

    Chen, Yao-Xuan; Ge, Qian-Qing; Shi, Yang; Liu, Jie; Xue, Ding-Jiang; Ma, Jing-Yuan; Ding, Jie; Yan, Hui-Juan; Hu, Jin-Song; Wan, Li-Jun

    2016-12-21

    Organic-inorganic hybrid perovskite single-crystalline thin films (SCTFs) are promising for enhancing photoelectric device performance due to high carrier mobility, long diffusion length, and carrier lifetime. However, bulk perovskite single crystals available today are not suitable for practical device application due to the unfavorable thickness. Herein, we report a facile space-confined solution-processed strategy to on-substrate grow various hybrid perovskite SCTFs in a size of submillimeter with adjustable thicknesses from nano- to micrometers. These SCTFs exhibit photoelectric properties comparable to bulk single crystals with low defect density and good air stability. The clear thickness-dependent colors allow fast visual selection of SCTFs with a suitable thickness for specific device application. The present substrate-independent growth of perovskite SCTFs opens up opportunities for on-chip fabrication of diverse high-performance devices.

  3. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    Science.gov (United States)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  4. Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

    International Nuclear Information System (INIS)

    Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

    2008-01-01

    In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

  5. Droplet manipulation by an external electric field for crystalline film growth.

    Science.gov (United States)

    Komino, Takeshi; Kuwabara, Hirokazu; Ikeda, Masaaki; Yahiro, Masayuki; Takimiya, Kazuo; Adachi, Chihaya

    2013-07-30

    Combining droplet manipulation by the application of an electric field with inkjet printing is proposed as a unique technique to control the surface wettability of substrates for solution-processed organic field-effect transistors (FETs). With the use of this technique, uniform thin films of 2,7-dioctyl[1]benzothieno[2,3,-b][1]benzothiopene (C8-BTBT) could be fabricated on the channels of FET substrates without self-assembled monolayer treatment. High-speed camera observation revealed that the crystals formed at the solid/liquid interface. The coverage of the crystals on the channels depended on the ac frequency of the external electric field applied during film formation, leading to a wide variation in the carrier transport of the films. The highest hole mobility of 0.03 cm(2) V(-1) s(-1) was obtained when the coverage was maximized with an ac frequency of 1 kHz.

  6. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

    International Nuclear Information System (INIS)

    Brendt, Jochen

    2011-01-01

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  7. Surface Properties of Photocatalytic Nano-Crystalline Titania Films and Reactor for Photocatalytic Degradation of Chloroform

    DEFF Research Database (Denmark)

    Søgaard, Erik Gydesen; Simonsen, Morten Enggrob; Jensen, Henrik

    2006-01-01

    In this work two immobilizations techniques of TiO2 onto glass were investigated; deposition of previously made titania powder (PMTP) and a sol-gel method. The titania powder used in this work was Degussa P25, Hombikat UV100 and a powder prepared in our laboratory SC134. The prepared TiO2 films w...

  8. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  9. Luminescent properties and energy transfer processes in Ce-Tb doped single crystalline film screens of Lu-based silicate, perovskite and garnet compounds

    Czech Academy of Sciences Publication Activity Database

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Martin, T.; Douissard, P.-A.; Nikl, Martin; Mareš, Jiří A.

    2013-01-01

    Roč. 56, Sept (2013), s. 415-419 ISSN 1350-4487 Institutional support: RVO:68378271 Keywords : single crystalline films * liquid phase epitaxy * perovskites * luminescence * scintillators Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.140, year: 2013

  10. Emission Behavior of Crystalline 1,4-Bis(4-phenylthiophene-2-yl)benzene Film Under Optical Excitation with Ultra Short Pulses.

    Science.gov (United States)

    Mochizuki, Hiroyuki; Kawaguchi, Yoshizo; Sasaki, Fumio; Hotta, Shu

    2016-04-01

    We evaluated emission behaviors of crystallized films of 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) in detail which was a representative thiophene/phenylene co-oligomer. The crystallized AC5 films were prepared by vapor deposition onto a substrate and thermal treatment. The AC5 films consisted of a crystalline domain with the size of several tens of micrometers. We used femtosecond laser pulses for the excitation of the AC5 films. As a result, the femtosecond laser pulses did not induce re-absorption above excitation energy densities of their laser threshold. The obtained gain value for AC5 crystallized film was large, over 150 cm-1. Furthermore, the emission cross section of the crystallized AC5 film was nearly 10(-16) cm2.

  11. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  12. Nano-Structured Crystalline Te Films by Laser Gas-Phase Pyrolysis of Dimethyl Tellurium

    Czech Academy of Sciences Publication Activity Database

    Pola, Josef; Pokorná, Veronika; Boháček, Jaroslav; Bastl, Zdeněk; Ouchi, A.

    2004-01-01

    Roč. 71, č. 2 (2004), s. 739-746 ISSN 0165-2370 R&D Projects: GA AV ČR IAA4072107; GA MŠk OC 523.60 Institutional research plan: CEZ:AV0Z4072921; CEZ:AV0Z4032918; CEZ:AV0Z4040901 Keywords : dimethyl tellurium * tellurium films * laser Subject RIV: CA - Inorganic Chemistry Impact factor: 1.352, year: 2004

  13. Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

    Science.gov (United States)

    Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

    2018-03-01

    70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

  14. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  15. P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2016-12-01

    Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

  16. Method of forming an oxide superconducting thin film having an R1A2C3 crystalline phase over an R2A1C1 crystalline phase

    International Nuclear Information System (INIS)

    Lelental, M.; Romanofsky, H.J.

    1992-01-01

    This patent describes a process which comprises forming a mixed rare earth alkaline earth copper oxide layer on a substrate and converting the mixed rare earth alkaline earth copper oxide layer to an electrically conductive layer. It comprises crystalline R 1 A 2 C 3 oxide phase by heating in the presence of oxygen, wherein rare earth and R is in each instance chosen from among yttrium, lanthanum, samarium, europium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium and alkaline earth and A is in each instance chosen from among calcium, strontium and barium, characterized in that a crystalline R 2 A 1 C 1 oxide phase is first formed as a layer on the substrate and the crystalline R 1 A 2 C 3 oxide phase is formed over the crystalline R 2 A 1 C 1 oxide phase by coating a mixed rare earth alkaline earth copper oxide on the crystalline R 2 A 1 C 1 oxide phase and heating the mixed rare earth alkaline earth copper oxide to a temperature of at least 1000 degrees C

  17. Spontaneous Synthesis of Highly Crystalline TiO2 Compact/Mesoporous Stacked Films by a Low-Temperature Steam-Annealing Method for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Sanehira, Yoshitaka; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu

    2018-05-23

    Highly crystalline TiO 2 nanostructured films were synthesized by a simple steam treatment of a TiCl 4 precursor film under a saturated water vapor atmosphere at 125 °C, here referred to as the steam-annealing method. In a single TiO 2 film preparation step, a bilayer structure comprising a compact bottom layer and a mesoporous surface layer was formed. The mesoporous layer was occupied by bipyramidal nanoparticles, with a composite phase of anatase and brookite crystals. Despite the low-temperature treatment process, the crystallinity of the TiO 2 film was high, comparable with that of the TiO 2 film sintered at 500 °C. The compact double-layered TiO 2 film was applied to perovskite solar cells (PSCs) as an electron-collecting layer. The PSC exhibited a maximum power conversion efficiency (PCE) of 18.9% with an open-circuit voltage ( V OC ) of 1.15 V. The PCE and V OC were higher than those of PSCs using a TiO 2 film formed by 500 °C sintering.

  18. Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) Films.

    Science.gov (United States)

    Chai, Zhimin; Abbasi, Salman A; Busnaina, Ahmed A

    2018-05-30

    Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material and energy consumption, low cost, and scalability. Here, we show scalable and controllable directed assembly of highly crystalline 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) films via a dip-coating process. Self-aligned stripe patterns with tunable thickness and morphology over a centimeter scale are obtained by adjusting two governing parameters: the pulling speed of a substrate and the solution concentration. OFETs are fabricated using the C8-BTBT films assembled at various conditions. A field-effect hole mobility up to 3.99 cm 2 V -1 s -1 is obtained. Owing to the highly scalable crystalline film formation, the dip-coating directed assembly process could be a great candidate for manufacturing next-generation electronics. Meanwhile, the film formation mechanism discussed in this paper could provide a general guideline to prepare other organic semiconducting films from small molecule solutions.

  19. Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)

    2016-08-01

    Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.

  20. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  1. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  2. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

    Czech Academy of Sciences Publication Activity Database

    Bok, Jan; Lalinský, Ondřej; Hanuš, M.; Onderišinová, Z.; Kelar, J.; Kučera, M.

    2016-01-01

    Roč. 163, APR (2016), s. 1-5 ISSN 0304-3991 R&D Projects: GA ČR(CZ) GA14-20012S; GA ČR(CZ) GA16-05631S; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : scintillator * GAGG:Ce * multicomponent garnet * epitaxial film * electron detection * SEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.843, year: 2016

  3. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2018-06-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  4. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2017-11-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  5. An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS-Pentacene Films.

    Science.gov (United States)

    Wang, Zi; Huang, Lizhen; Zhu, Xiaofei; Zhou, Xu; Chi, Lifeng

    2017-10-01

    Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO 2 sensor based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Artificial neural systems using memristive synapses and nano-crystalline silicon thin-film transistors

    Science.gov (United States)

    Cantley, Kurtis D.

    Future computer systems will not rely solely on digital processing of inputs from well-defined data sets. They will also be required to perform various computational tasks using large sets of ill-defined information from the complex environment around them. The most efficient processor of this type of information known today is the human brain. Using a large number of primitive elements (˜1010 neurons in the neocortex) with high parallel connectivity (each neuron has ˜104 synapses), brains have the remarkable ability to recognize and classify patterns, predict outcomes, and learn from and adapt to incredibly diverse sets of problems. A reasonable goal in the push to increase processing power of electronic systems would thus be to implement artificial neural networks in hardware that are compatible with today's digital processors. This work focuses on the feasibility of utilizing non-crystalline silicon devices in neuromorphic electronics. Hydrogenated amorphous silicon (a-Si:H) nanowire transistors with Schottky barrier source/drain junctions, as well as a-Si:H/Ag resistive switches are fabricated and characterized. In the transistors, it is found that the on-current scales linearly with the effective width W eff of the channel nanowire array down to at least 20 nm. The solid-state electrolyte resistive switches (memristors) are shown to exhibit the proper current-voltage hysteresis. SPICE models of similar devices are subsequently developed to investigate their performance in neural circuits. The resulting SPICE simulations demonstrate spiking properties and synaptic learning rules that are incredibly similar to those in biology. Specifically, the neuron circuits can be designed to mimic the firing characteristics of real neurons, and Hebbian learning rules are investigated. Finally, some applications are presented, including associative learning analogous to the classical conditioning experiments originally performed by Pavlov, and frequency and pattern

  7. P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2018-02-01

    Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

  8. Crystalline and photoluminescence characteristics of YVO{sub 4}:Sm{sup 3+} thin films grown by pulsed laser deposition under oxygen pressure

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hyun Kyoung; Chung, Jong Won; Moon, Byung Kee; Choi, Byung Chun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of); Jeong, Jung Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)], E-mail: jhjeong@pknu.ac.kr; Yi, Soung Soo [Department of Electronic Material Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Jung Hwan [Department of Physics, Dong Eui University, Busan 614-714 (Korea, Republic of); Kim, Kwang Ho [School of Materials Science and Engineering, Busan National University, Busan 609-735 (Korea, Republic of)

    2009-05-15

    YVO{sub 4}:Sm{sup 3+} films were deposited on Al{sub 2}O{sub 3} (0 0 0 1) substrates at various oxygen pressures changing from 13.3 to 46.6 Pa by using the pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The XRD pattern confirmed that YVO{sub 4}:Sm{sup 3+} film has zircon structure and the AFM study revealed that the films consist of homogeneous grains ranging from 100 to 400 nm. The room temperature photoluminescence (PL) spectra showed that the emitted radiation was dominated by a reddish-orange emission peak at 602 nm radiating from the transition of ({sup 4}G{sub 5/2}{yields}{sup 6}H{sub 7/2}). The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the deposition conditions, in particular, the substrate temperature. The surface roughness and photoluminescence intensity of these films showed similar behavior as a function of oxygen pressure.

  9. Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

    Science.gov (United States)

    Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

    2016-11-01

    Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in 1 bar of CO at 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

  10. Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films

    International Nuclear Information System (INIS)

    Babin, V.; Gorbenko, V.; Krasnikov, A.; Mihokova, E.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

    2013-01-01

    Single crystalline films of Bi-doped Y 2 SiO 5 are studied at 4.2–350 K by the time-resolved luminescence methods under excitation in the 3.8–6.2 eV energy range. Ultraviolet luminescence of Y 2 SiO 5 :Bi (≈3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi 3+ centers which are related to the 3 P 0 and 3 P 1 levels of a free Bi 3+ ion, respectively. The lowest-energy excitation band of this emission, located at ≈4.5 eV, is assigned to the 1 S 0 → 3 P 1 transitions of a free Bi 3+ ion. The phenomenological model is proposed to describe the excited-state dynamics of Bi 3+ centers in Y 2 SiO 5 :Bi, and parameters of the triplet RES are determined. -- Highlights: •Luminescence of Y 2 SiO 5 :Bi is investigated for the first time. •Ultraviolet emission arises from Bi 3+ ions located in Y lattice sites. •The triplet relaxed excited states parameters of Bi 3+ centers are determined

  11. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    International Nuclear Information System (INIS)

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  12. Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films

    CERN Document Server

    Mantovan, R.; Mokhles Gerami, A.; Mølholt, T. E.; Wiemer, C.; Longo, M.; Gunnlaugsson, H. P.; Johnston, K.; Masenda, H.; Naidoo, D.; Ncube, M.; Bharuth-Ram, K.; Fanciulli, M.; Gislason, H. P.; Langouche, G.; Ólafsson, S.; Weyer, G.

    The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, following dilute implantation of 57Mn (T½ = 1.5 min) at ISOLDE/CERN, to study the electronic charge distribution in the immediate vicinity  of the 57Fe probe substituting Ge (FeGe), and to interrogate the local environment of FeGe over the amorphous-crystalline phase transition in GeTe thin films. Our results show that the local structure  of as-sputtered amorphous GeTe is a combination of tetrahedral and defect-octahedral sites. The main effect of the crystallization is the conversion from tetrahedral to defect-free octahedral sites.  We discover that only the tetrahedral fraction in amorphous GeTe participates to the change of the FeGe-Te chemical bond...

  13. Interdiffusion in epitaxial, single-crystalline Au/Ag thin films studied by Auger electron spectroscopy sputter-depth profiling and positron annihilation

    International Nuclear Information System (INIS)

    Noah, Martin A.; Flötotto, David; Wang, Zumin; Reiner, Markus; Hugenschmidt, Christoph; Mittemeijer, Eric J.

    2016-01-01

    Interdiffusion in epitaxial, single-crystalline Au/Ag bilayered thin films on Si (001) substrates was investigated by Auger electron spectroscopy (AES) sputter-depth profiling and by in-situ positron annihilation Doppler broadening spectroscopy (DBS). By the combination of these techniques identification of the role of vacancy sources and sinks on interdiffusion in the Au/Ag films was possible. It was found that with precise knowledge of the concentration-dependent self-diffusion and impurity diffusion coefficients a distinction between the Darken-Manning treatment and Nernst-Planck treatment can be made, which is not possible on the basis of the determined concentration-depth profiles alone.

  14. Relation between crystallinity and chemical nature of surface on wettability: A study on pulsed laser deposited TiO2 thin films

    International Nuclear Information System (INIS)

    Shirolkar, Mandar M.; Phase, Deodatta; Sathe, Vasant; Choudhary, Ram Janay; Rodriguez-Carvajal, J.; Kulkarni, Sulabha K.

    2011-01-01

    Pure titania (TiO 2 ) polycrystalline thin films in rutile, anatase and mixed phase have been grown on amorphous glass substrates by pulsed laser deposition method at various oxygen gas pressure. Wettability investigations have been carried out on these films. Consistent with our previous report [J. Phys. D: Appl. Phys. 41, 155308 (2008)] it has been observed that for nearly same surface roughness large contact angle or superhydrophobicity is present when sample has a pure single phase and lower contact angle or hydrophobicity when mixed phases were present. Structural characterizations suggest that in addition to roughness, pure phase film surface associated with hydrophobic sites and mixed phase film surface show association of both hydrophobic and hydrophilic sites, which might be inducing specific wetting character. UV treatment induces superhydrophilicity in the films. It was observed that UV irradiation causes nonequilibrium state on the TiO 2 surface, leading to changes in the electron density, which in turn produces decrement in the crystallinity and lattice expansion. Reversible changes in the wetting state on the pure phase surfaces were observed to be faster than those on the mixed phase surfaces. We tried to establish the possible relation between crystalline phases, chemical nature of surface on reversible wettability besides the main governing parameter viz. surface roughness.

  15. Luminescent and scintillation properties of the Ce3+ doped Y3−xLuxAl5O12:Ce single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Popielarski, P.; Mosińska, L.; Fedorov, A.

    2016-01-01

    The work is related to the investigation of scintillation and luminescent properties of single crystalline films (SCF) of solid solutions of Ce 3+ doped Y 3−x Lu x Al 5 O 12 :Ce garnets with x value in the 0–3 range. We have shown a possibility of realization of high-energy shift of the Ce 3+ ion emission spectrum in these garnets up to 22 nm. We have also found that the light yield of the radioluminescence under α-particle excitation of LuAG:Ce SCF can exceed by 1.3 times the corresponding values for the YAG:Ce SCF counterpart. For investigation of the luminescent properties of Y 3−x Lu x Al 5 O 12 :Ce SCF at different x values the luminescent spectroscopy of these SCFs under excitation by synchrotron radiation in the VUV range was performed. - Highlights: • Single crystalline films of Y 3−x Lu x Al 5 O 12 garnets at x=0–3.0 were grown by LPE method onto YAG substrates. • Lattice constant of Y 3−x Lu x Al 5 O 12 :Ce film and the film/substrate misfit changed linearly with increasing of Lu content in the x=0–3.0 range. • High-energy shift of the Ce 3+ emission up to 22 nm in Y 3−x Lu x Al 5 O 12 film with increasing of Lu content in the x=0–3.0 range. • Light yield of Y 3−x Lu x Al 5 O 12 :Ce film decreases in the x=0–1.8 range and increases in the x=1.8–3.0 range. • Scintillation LY of Lu 3 Al 5 O 12 :Ce film can exceed by 1.3 times the LY for YAG:Ce film counterpart.

  16. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films

    Science.gov (United States)

    Preissler, Natalie; Bierwagen, Oliver; Ramu, Ashok T.; Speck, James S.

    2013-08-01

    A comprehensive study of the room-temperature electrical and electrothermal transport of single-crystalline indium oxide (In2O3) and indium tin oxide (ITO) films over a wide range of electron concentrations is reported. We measured the room-temperature Hall mobility μH and Seebeck coefficient S of unintentionally doped and Sn-doped high-quality, plasma-assisted molecular-beam-epitaxy-grown In2O3 for volume Hall electron concentrations nH from 7×1016 cm-3 (unintentionally doped) to 1×1021 cm-3 (highly Sn-doped, ITO). The resulting empirical S(nH) relation can be directly used in other In2O3 samples to estimate the volume electron concentration from simple Seebeck coefficient measurements. The mobility and Seebeck coefficient were modeled by a numerical solution of the Boltzmann transport equation. Ionized impurity scattering and polar optical phonon scattering were found to be the dominant scattering mechanisms. Acoustic phonon scattering was found to be negligible. Fitting the temperature-dependent mobility above room temperature of an In2O3 film with high mobility allowed us to find the effective Debye temperature (ΘD=700 K) and number of phonon modes (NOPML=1.33) that best describe the polar optical phonon scattering. The modeling also yielded the Hall scattering factor rH as a function of electron concentration, which is not negligible (rH≈1.4) at nondegenerate electron concentrations. Fitting the Hall-scattering-factor corrected concentration-dependent Seebeck coefficient S(n) for nondegenerate samples to the numerical solution of the Boltzmann transport equation and to widely used, simplified equations allowed us to extract an effective electron mass of m*=(0.30±0.03)me (with free electron mass me). The modeled mobility and Seebeck coefficient based on polar optical phonon and ionized impurity scattering describes the experimental results very accurately up to electron concentrations of 1019 cm-3, and qualitatively explains a mobility plateau or local

  17. Crystalline phase control and growth selectivity of β-MnO{sub 2} thin films by remote plasma assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abi-Akl, M.; Tabbal, M., E-mail: malek.tabbal@aub.edu.lb; Kassem, W.

    2016-08-01

    In this paper, we exploit the effect of coupling an oxygen remote plasma source to Pulsed Laser Deposition (PLD) for the growth of pure and well crystallized β-MnO{sub 2} films. Films were grown on Si substrates by laser ablation of a MnO target in oxygen ambient and remote plasma. X-Ray Diffraction, Fourier Transform Infra-Red spectroscopy and Raman scattering were used to determine the crystalline structure and bonding in the grown layers, whereas Atomic Force Microscopy was used to study their morphology and surface roughness. Deposition at 500 °C and high oxygen pressure (33.3–66.6 Pa) resulted in the formation of films with roughness of 12 nm consisting of nsutite γ-MnO{sub 2}, a structure characterized by the intergrowth of the pyrolusite β-MnO{sub 2} in a ramsdellite R-MnO{sub 2} matrix. Deposition at the same temperature but low pressure (1.33–3.33 Pa) in oxygen ambient lead to the formation of Mn{sub 2}O{sub 3} whereas plasma activation within the same pressure range induced the growth of single phase highly crystalline β-MnO{sub 2} having smooth surfaces with a roughness value of 0.6 nm. Such results underline the capability of remote plasma assisted PLD in selecting and controlling the crystalline phase of manganese oxide layers. - Highlights: • MnO{sub 2} films were grown by Remote Plasma Assisted Pulsed Laser Deposition. • Crystalline MnO{sub 2} is formed at a substrate temperature of 500 °C. • Smooth crystalline single phase β-MnO{sub 2} films were obtained at 1.33–3.33 Pa. • Deposition at 1.33–3.33 Pa without plasma activation lead to the growth of Mn{sub 2}O{sub 3}. • Without plasma, mixed phases of MnO{sub 2} polymorphs are obtained at 33.3 Pa and above.

  18. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    Science.gov (United States)

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

  19. Multivariate analysis of DSC-XRD simultaneous measurement data: a study of multistage crystalline structure changes in a linear poly(ethylene imine) thin film.

    Science.gov (United States)

    Kakuda, Hiroyuki; Okada, Tetsuo; Otsuka, Makoto; Katsumoto, Yukiteru; Hasegawa, Takeshi

    2009-01-01

    A multivariate analytical technique has been applied to the analysis of simultaneous measurement data from differential scanning calorimetry (DSC) and X-ray diffraction (XRD) in order to study thermal changes in crystalline structure of a linear poly(ethylene imine) (LPEI) film. A large number of XRD patterns generated from the simultaneous measurements were subjected to an augmented alternative least-squares (ALS) regression analysis, and the XRD patterns were readily decomposed into chemically independent XRD patterns and their thermal profiles were also obtained at the same time. The decomposed XRD patterns and the profiles were useful in discussing the minute peaks in the DSC. The analytical results revealed the following changes of polymorphisms in detail: An LPEI film prepared by casting an aqueous solution was composed of sesquihydrate and hemihydrate crystals. The sesquihydrate one was lost at an early stage of heating, and the film changed into an amorphous state. Once the sesquihydrate was lost by heating, it was not recovered even when it was cooled back to room temperature. When the sample was heated again, structural changes were found between the hemihydrate and the amorphous components. In this manner, the simultaneous DSC-XRD measurements combined with ALS analysis proved to be powerful for obtaining a better understanding of the thermally induced changes of the crystalline structure in a polymer film.

  20. Anomalous behavior of B1g mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO thin films

    Directory of Open Access Journals (Sweden)

    Subodh K. Gautam

    2015-12-01

    Full Text Available The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO2 lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb+5 in the TiO2 lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR spectra of films with small size crystallites shows stiffening of about 4 cm−1 for the Eg(1 mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B1g mode exhibits a large anomalous softening of 20 cm−1 with asymmetrical broadening; which was not reported for the case of pure TiO2 crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb5+ doping induced reduction of Ti4+ ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

  1. Luminescent and scintillation properties of the Pr"3"+ doped single crystalline films of Lu_3Al_5_−_xGa_xO_1_2 garnet

    International Nuclear Information System (INIS)

    Gorbenko, V.; Zorenko, Yu; Zorenko, T.; Voznyak, T.; Paprocki, K.; Fabisiak, K.; Fedorov, A.; Bilski, P.; Twardak, A.; Zhusupkalieva, G.

    2016-01-01

    The Pr"3"+ d–f luminescence was investigated in the single crystalline films (SCF) of Lu_3Al_5_−_xGa_xO_1_2:Pr garnet solid solution at x = 1–3, grown by the liquid phase epitaxy (LPE) method from the melt-solution based on the PbO–B_2O_3 flux. The shape of CL spectra and decay kinetics of Pr"3"+ ions in Lu_3Al_5_−_xGa_xO_1_2 SCFs strongly depend on the total gallium concentration x and distribution of Ga"3"+ ions between the tetrahedral and octahedral position of the garnet host. The best scintillation properties of Lu_3Al_5_−_xGa_xO_1_2:Pr SCF are achieved at the nominal Ga content in melt-solution in the x = 2–2.5 range. - Highlights: • Single crystalline films of Lu_3Al_5_−_x Ga_xO_1_2:Pr garnet at x = 1–3 were grown by the LPE method. • Pr"3"+ emission spectra, light yield and decay time of films show strong dependence on Ga content. • The maximal light yield of Lu_3Al_5_−_x Ga_xO_1_2:Pr film is observed at Ga content x = 2.0–2.5.

  2. Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

    Energy Technology Data Exchange (ETDEWEB)

    Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

  3. Lifetime Tests on a High Ohms/Square Metalized High Crystalline Polypropylene Film Capacitor with Application to a Marx Modulator

    International Nuclear Information System (INIS)

    Kemp, Mark A.; Burkhart, Craig; Tang, Tao

    2010-01-01

    This paper presents accelerated lifetime tests on a polypropylene film capacitor. Experimental parameters (20% droop, 5 Hz repetition rate) simulate anticipated operating conditions encountered in the SLAC P2 Marx. Elevated film electric field stress is utilized as the acceleration parameter. Results indicate that, for the particular film of interest, a film stress of ∼290 V/μm corresponds to a 10 5 hour lifetime. In addition, the voltage scaling exponent for this film is 13.1.

  4. Reflectance study on the metal-insulator transition driven by crystallinity change in poly(3,4-ethylenedioxy thiophene)/poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Cho, Shinuk; Park, Sungheum; Lee, Kwanghee

    2005-01-01

    We report optical reflectance, R(ω), studies on free-standing films of poly(3,4-ethylene dioxy thiophene)/poly(style ne sulfonate) (PEDOT-PSS) measured over a range from 0.02 - 5.0 eV. When the PEDOT-PSS films were prepared at an elevated temperature of 60 .deg. C, the films exhibit an increased dc-conductivity (σ dc ∼ 104 S/cm) and an optical conductivity, σ(ω), in the intraband transitions below 1.0 eV as compared with the films prepared at room temperature (σ dc ∼ 47 S/cm). Detailed analysis of σ(ω) in terms of the 'localization-modified Drude (LMD) model' demonstrated that the heat-treated PEDOT-PSS was a disordered metal near the metal-insulator transition (MIT) while the as-grown films could be better described as a Fermi glass on the insulating side of MIT. The heat-annealing process increased the degree of crystallinity of the films, thereby inducing a MIT near the critical limit.

  5. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  6. Enhanced Crystalline Phase Purity of CH3NH3PbI3-xClx Film for High-Efficiency Hysteresis-Free Perovskite Solar Cells.

    Science.gov (United States)

    Yang, Yingguo; Feng, Shanglei; Xu, Weidong; Li, Meng; Li, Li; Zhang, Xingmin; Ji, Gengwu; Zhang, Xiaonan; Wang, Zhaokui; Xiong, Yimin; Cao, Liang; Sun, Baoquan; Gao, Xingyu

    2017-07-12

    Despite rapid successful developments toward promising perovskite solar cells (PSCs) efficiency, they often suffer significant hysteresis effects. Using synchrotron-based grazing incidence X-ray diffraction (GIXRD) with different probing depths by varying the incident angle, we found that the perovskite films consist of dual phases with a parent phase dominant in the interior and a child phase with a smaller (110) interplanar space (d (110) ) after rapid thermal annealing (RTA), which is a widely used post treatment to improve the crystallization of solution-processed perovskite films for high-performance planar PSCs. In particular, the child phase composition gradually increases with decreasing depth till it becomes the majority on the surface, which might be one of the key factors related to hysteresis in fabricated PSCs. We further improve the crystalline phase purity of the solution-processed CH 3 NH 3 PbI 3-x Cl x perovskite film (referred as g-perovskite) by using a facile gradient thermal annealing (GTA), which shows a uniformly distributed phase structure in pinhole-free morphology with less undercoordinated Pb and I ions determined by synchrotron-based GIXRD, grazing incidence small-angle X-ray scattering, scanning electron microscopy, and X-ray photoelectron spectroscopy. Regardless of device structures (conventional and inverted types), the planar heterojunction PSCs employing CH 3 NH 3 PbI 3-x Cl x g-perovskite films exhibit negligible hysteresis with a champion power conversion efficiency of 17.04% for TiO 2 -based conventional planar PSCs and 14.83% for poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate) (PEDOT:PSS)-based inverted planar PSCs. Our results indicate that the crystalline phase purity in CH 3 NH 3 PbI 3-x Cl x perovskite film, especially in the surface region, plays a crucial role in determining the hysteresis effect and device performance.

  7. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ede, Anthony

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

  8. Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, A. S.; Sadofev, S.; Schäfer, P.; Kalusniak, S.; Henneberger, F., E-mail: fh@physik.hu-berlin.de [Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany)

    2014-11-10

    Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.

  9. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  10. Electron diffraction on amorphous and crystalline AuAl2 , AuGa2 and AuIn2 thin films

    International Nuclear Information System (INIS)

    Bohorquez, A.

    1991-01-01

    Experimental (in situ) measurements of electron diffraction and resistivity of amorphous and crystalline AuAl 2 , AuGa 2 and AuIn 2 thin films were performed. Thin films were produced by quench condensation. Interference and atomic distribution functions were analyzed assuming the same short range order for the three systems in the amorphous phase. The experimental results do not agree with this assumption, giving evidence that the short range order is not the same for the three amorphous systems. Further discussion of interference and atomic distribution functions shows a more evident tendency in amorphous AuIn 2 where short order of AuIn 2 and In can be inferred. (Author)

  11. Unusually high critical current of P-doped BaFe{sub 2}As{sub 2} single crystalline thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz; Engelmann, Jan; Schultz, Ludwig [IMW, IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Tarantini, Chiara; Jaroszynski, Jan [ASC, NHMFL, Florida (United States); Grinenko, Vadim; Reich, Elke; Huehne, Ruben [IMW, IFW Dresden, Dresden (Germany); Haenisch, Jens [IMW, IFW Dresden, Dresden (Germany); ITEP, KIT, Karlsruhe (Germany); Mori, Yasohiro; Sakagami, Akihiro; Kawaguchi, Takahiko; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan); Holzapfel, Bernhard [ITEP, KIT, Karlsruhe (Germany); Iida, Kazumasa [IMW, IFW Dresden, Dresden (Germany); Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan)

    2015-07-01

    Microstructurally clean, isovalently P-doped BaFe{sub 2}As{sub 2} single crystalline thin films have been prepared by molecular beam epitaxy. These films show a superconducting transition temperature (T{sub c}) of over 30 K and high transport self-field critical current densities (J{sub c}) of over 6 MA/cm{sup 2} at 4.2 K, which are among the highest for Fe based superconductors. In-field J{sub c} exceeds 0.1 MA/cm{sup 2} at μ{sub 0}H = 35 T for H parallel ab and μ{sub 0}H = 18 T for H parallel c, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar T{sub c}. This unusually high J{sub c} makes P-doped Ba-122 very favorable for high-field magnet applications.

  12. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  13. Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA

    Czech Academy of Sciences Publication Activity Database

    Shin, D.; Tokuda, N.; Rezek, Bohuslav; Nebel, C.E.

    2006-01-01

    Roč. 8, - (2006), s. 844-850 ISSN 1388-2481 Institutional research plan: CEZ:AV0Z10100521 Keywords : electrochemical surface modification * single-crystalline CVD diamond * covalent DNA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.484, year: 2006

  14. Low-temperature preparation of crystalline nanoporous TiO2 films by surfactant-assisted anodic electrodeposition

    Czech Academy of Sciences Publication Activity Database

    Wessels, K.; Feldhoff, A.; Wark, M.; Rathouský, Jiří; Oekermann, T.

    2006-01-01

    Roč. 9, č. 6 (2006), C93-C96 ISSN 1099-0062 Institutional research plan: CEZ:AV0Z40400503 Keywords : thin films * cathodic electrodeposition * phase-stability * ZnO films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.009, year: 2006

  15. Luminescence enhancement of ZnO-poly(methylmethacrylate) nanocomposite films by incorporation of crystalline BaTiO_3 nanoparticles

    International Nuclear Information System (INIS)

    Kanamori, Tsuyoshi; Han, Yu; Nagao, Daisuke; Kamezawa, Nao; Ishii, Haruyuki; Konno, Mikio

    2016-01-01

    Highlights: • Dielectric barium titanate (BT) nanoparticles incorporated into luminescence films. • Luminescence intensities increased by the BT nanoparticle incorporation. • Incorporation of highly dielectric nanoparticles effective for luminescence enhancement. - Abstract: Incorporation of highly dielectric nanoparticles into luminescent ZnO-polymethylmethacrylate (PMMA) nanocomposite films was undertaken to examine the effect of nanoparticle incorporation on luminescence intensity of the nanocomposite films. ZnO nanoparticles were prepared as inorganic phosphors by a precipitation method. The ZnO nanoparticles were then surface-modified with 3-methacryloxypropyltrimethoxysilane (MPTMS) to be used for fabrication of the ZnO-PMMA nanocomposite film. Barium titanate (BT) nanoparticles were synthesized with a sol-gel method as the highly dielectric nanoparticles, which were also surface-modified with the MPTMS for the incorporation into the nanocomposite films. Luminescence intensity of the nanocomposite films was successfully increased by the nanoparticle incorporation up to a BT content around 15 vol%. The luminescence intensity higher than that measured for the nanocomposite films incorporating SiO_2 nanoparticles indicated that the incorporation of highly dielectric nanoparticles was an effective approach to enhance the luminescence of ZnO nanoparticles in the polymer thin films.

  16. The influence of metal interlayers on the structural and optical properties of nano-crystalline TiO 2 films

    KAUST Repository

    Yang, Yong; Zhang, Qiang; Zhang, Bei; Mi, Wenbo; Chen, Long; Li, Lin; Zhao, Chao; Diallo, Elhadj; Zhang, Xixiang

    2012-01-01

    TiO 2-M-TiO 2 (M = W, Co and Ag) multilayer films have been deposited on glass substrates using reactive magnetron sputtering, then annealed in air for 2 h at 500°C. The structure, surface morphology and optical properties of the films have been

  17. "Brick and Mortar" Strategy for the Formation of Highly Crystalline Mesoporous Titania Films from Nanocrystalline Building Blocks

    Czech Academy of Sciences Publication Activity Database

    Szeifert, J. M.; Fattakhova Rohlfing, D.; Georgiadou, D.; Kalousek, Vít; Rathouský, Jiří; Kuang, D.; Wenger, S.; Zakeeruddin, S. M.; Grätzel, M.; Bein, T.

    2009-01-01

    Roč. 21, č. 7 (2009), s. 1260-1265 ISSN 0897-4756 R&D Projects: GA ČR GA104/08/0435 Institutional research plan: CEZ:AV0Z40400503 Keywords : sensitized solar- cells * anatase thin-films * TiO2 films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 5.368, year: 2009

  18. Controlling the color of cholesteric liquid-crystalline films by photoirradiation of a chiroptical molecular switch used as dopant

    NARCIS (Netherlands)

    van Delden, RA; Huck, NPM; Feringa, BL; Delden, Richard A. van; Gelder, Marc B. van; Huck, Nina P.M.

    Using thin films of a cholesteric mixture of acrylates 2 and 3 doped with the chiroptical molecular switch (M)-trans-1, photo-control of the reflection color between red and green is possible. This doped liquid-crystal (LC) film can be used for photoinduced writing, color reading, and photoinduced

  19. Molecular Design for Preparation of Hexagonal-Ordered Porous Films Based on Side-chain Type Liquid-Crystalline Star Polymer.

    Science.gov (United States)

    Naka, Yumiko; Takayama, Hiromu; Koyama, Teruhisa; Le, Khoa V; Sasaki, Takeo

    2018-05-02

    Fabrication of regularly porous films by the breath-figure method has attracted much attention. The simple, low-cost technique uses the condensation of water droplets to produce these structures, but the phenomenon itself is complex, requiring control over many interacting parameters that change throughout the process. Developing a unified understanding for the molecular design of polymers to prepare ordered porous films is challenging, but required for further advancements. In this article, the effects of the chemical structure of polymers in the breath-figure technique were systematically explored using side-chain type liquid-crystalline (LC) star polymers. The formation of porous films was affected by the structure of the polymers. Although the entire film surface of poly(11-[4-(4-cyanobiphenyl)oxy]undecyl methacrylate) (P11CB) had a hexagonal ordered porous structure over a certain Mn value, regularly arranged holes did not easily form in poly(methyl methacrylate) (PMMA), even though the main chain of PMMA is similar to that of P11CB. Comparing P11CB and poly(11-[(1,1'-biphenyl)-4-yloxy]undecyl methacrylate) (P11B) (P11CB without cyano groups) showed that the local polar groups in hydrophobic polymers promoted the formation of ordered porous films. No holes formed in poly(4-cyanobiphenyl methacrylate) (P0CB) (P11CB without alkyl spacers) films due to its hydrophilicity. The introduction of alkyl chains in P0CB allowed the preparation of honeycomb-structured films by increasing the internal tension. However, alkyl chains in the side chain alone did not result in a porous structure, as in the case of poly(11-[(1,1'-biphenyl)-4-yloxy]undecyl methacrylate) (P11). Aromatic rings are also required to increase the Tg and improve film formability. In the present study, suitable molecular designs of polymers were found, specifically hydrophobic polymers with local polar groups, to form a regularly porous structure. Development of clear guidelines for the molecular

  20. Amorphous and crystalline In{sub 2}O{sub 3}-based transparent conducting films for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)

    2017-02-15

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In{sub 2}O{sub 3} (In{sub 2}O{sub 3}:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In{sub 2}O{sub 3}:H films grown by magnetron sputtering. The polycrystalline (poly-) In{sub 2}O{sub 3}:H films exhibited electron mobilities (over 100 cm{sup 2}V{sup -1} s{sup -1}) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In{sub 2}O{sub 3}-based TCO; (ii) the structural and optoelectrical properties of the a-In{sub 2}O{sub 3}:H and poly-In{sub 2}O{sub 3}:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Detecting spin polarization of nano-crystalline manganese doped zinc oxide thin film using circular polarized light

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayed, H.M., E-mail: h_m_elsaid@hotmail.com

    2016-02-01

    The presence of spin polarization in Mn-doped ZnO thin film is very important for spintronic applications. Spin polarization was detected using simple method. This method depends on measuring the optical transmittance using circular polarized light in visible and near infra-red region. It was found that, there is a difference in the optical energy gap of the film for circular left and circular polarized light. For temperatures > 310 K the difference in energy gap is vanished. This result is confirmed by measuring the magnetic hysteresis of the film. This work introduces a promising method for measuring the ferromagnetism in diluted magnetic semiconductors. - Highlights: • Highly oriented c-axis of Mn-ZnO thin film doped with nitrogen is prepared. • The optical energy gap depends on the state of circularly polarized light. • The presence of spin polarization is confirmed using simple optical method. • Magnetic measurements are consistent with the results of the optical method.

  2. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  3. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  4. Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

    International Nuclear Information System (INIS)

    Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-01-01

    Indium oxide (In 2 O 3 ) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl 3 ) material source witch is prepared with dissolvent Ethanol (C 2 H 5 -OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I2 1 3 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In 2 O 3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of E g will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In 2 O 3 thin films deposited by ultrasonic spray at 400 °C has been reported

  5. Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

    Science.gov (United States)

    Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-03-01

    Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl3) material source witch is prepared with dissolvent Ethanol (C2H5-OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I213 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In2O3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of Eg will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In2O3 thin films deposited by ultrasonic spray at 400 °C has been reported.

  6. Spin polarization of single-crystalline Co2MnSi films grown by PLD on GaAs(0 0 1)

    International Nuclear Information System (INIS)

    Wang, W.H.; Przybylski, M.; Kuch, W.; Chelaru, L.I.; Wang, J.; Lu, Y.F.; Barthel, J.; Kirschner, J.

    2005-01-01

    Single-crystalline Co 2 MnSi Heusler alloy films have been grown on GaAs(0 0 1) substrates by pulsed laser deposition. The best crystallographic quality has been achieved after deposition at 450 K. Spin-resolved photoemission measurements at BESSY reveal spin-resolved density of states that are in qualitative agreement with recent band structure calculations. The spin polarization of photoelectrons close to the Fermi level is found to be at most 12% at room temperature, in contrast to the predicted half-metallic behavior. We suggest that this discrepancy may be attributed to a non-magnetic surface region and/or partial chemical disorder in the Co 2 MnSi lattice

  7. Influence of thermal treatment and γ-radiation on absorption, luminescence and scintillation properties of Lu3Al5O12:Ce single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Pavlyk, B.; Turchak, R.; Zorenko, T.; Gorbenko, V.; Konstankevych, I.; Savchyn, V.; Voznyak, T.

    2007-01-01

    The influence of thermal treatment (TT) and irradiation by γ-quanta ( 60 Co, 1.25 MeV) in the range of absorbed doses 10 6 -10 8 R on the absorption, luminescence and light yield (LY) of scintillators based on Lu 3 Al 5 O 12 :Ce (LuAG:Ce) single crystalline films (SCF) grown by LPE from the Pb-based flux is studied. It has been shown that transformation of the Fe 3+ ↔Fe 2+ and Pb 2+ ↔Pb 4+ valent states of iron and lead trace impurities cause the change in the optical absorption of SCF induced by the TT in air and vacuum in the range of annealing temperatures of 800-1200 0 C. Possible types of radiation defects in LuAG:Ce SCF induced by γ-radiation are analyzed

  8. Luminescence and Tb3+-Ce3+-Eu3+ ion energy transfer in single-crystalline films of Tb3Al5O12:Ce,Eu garnet

    International Nuclear Information System (INIS)

    Zorenko, Y.; Gorbenko, V.; Voznyak, T.; Batentschuk, M.; Osvet, A.; Winnacker, A.

    2008-01-01

    The paper is devoted to investigation of the processes of excitation energy transfer between the host cations (Tb 3+ ions) and the activators (Ce 3+ and Eu 3+ ions) in single-crystalline films of Tb 3 Al 5 O 12 :Ce,Eu (TbAG:Ce,Eu) garnet which is considered as a promising luminescent material for the conversion of LED's radiation. The cascade process of excitation energy transfer is shown to be realized in TbAG:Ce,Eu: (i) from Tb 3+ ions to Ce 3+ and Eu 3+ ions; (ii) from Ce 3+ ions to Eu 3+ ions by means of dipole-dipole interaction and through Tb 3+ ion sublattice

  9. Photoinduced Birefringent Pattern and Photoinactivation of Liquid-Crystalline Copolymer Films with Benzoic Acid and Phenylaldehyde Side Groups.

    Science.gov (United States)

    Kawatsuki, Nobuhiro; Inada, Shogo; Fujii, Ryosuke; Kondo, Mizuho

    2018-02-06

    In situ formation of N-benzylideneaniline (NBA) side groups achieved photoinduced cooperative reorientation of photoinactive copolymers with phenylaldehyde (PA) and benzoic acid (BA) side groups doped with 4-methoxyaniline (AN) molecules. Thermally stimulated molecular reorientation of the side groups was generated due to the axis-selective photoreaction of the NBA moieties. Selective coating with AN on the copolymer film formed NBA moieties in the desired region, resulting in a photoinduced birefringent pattern. Additionally, postannealing at an elevated temperature for a long time attained photoinactivation of the reoriented film, and recoating with AN to form NBA achieved the multiple birefringent patterns and repatterning of the reoriented structures. The slow thermal hydrolysis of NBA, which was 50 times slower than the thermally stimulated self-organization of the side groups due to the presence of BA side groups, contributed to the photodurability of the reoriented film and multiple birefringent patterns.

  10. Luminescence and origin of lead-related centers in single crystalline films of Y2SiO5 and Lu2SiO5

    International Nuclear Information System (INIS)

    Babin, V.; Gorbenko, V.; Krasnikov, A.; Mihokova, E.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

    2013-01-01

    In the temperature range 4.2–350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics are studied for the undoped Y 2 SiO 5 and Lu 2 SiO 5 single crystalline films grown by liquid phase epitaxy method from the PbO-based flux and, owing to that, containing lead ions substituting for Y 3+ or Lu 3+ ions. Luminescence characteristics of Pb-related centers of different types are identified. On the basis of the results obtained, we suggest that the ultraviolet emission of Pb-related centers arises from the Pb 2+ ions substituting for Y 3+ or Lu 3+ ions in the Y1 and Lu1 lattice sites of the X 2 structure. Possible hypotheses on the origin of the intense complex lead-related blue emission are discussed. We propose phenomenological models describing the excited-state dynamics of the studied luminescence centers. We also determine characteristic parameters of the corresponding relaxed excited states, in particular, the energy separations between the excited states and the rates of the radiative and non-radiative transitions from these states. -- Highlights: •Emission of lead centers in Y 2 SiO 5 and Lu 2 SiO 5 single crystalline films is studied. •The ultraviolet emission arises from Pb 2+ ions located in Y1 or Lu1 lattice sites. •Possible hypotheses on the origin of the blue emission are proposed and discussed. •The relaxed excited states parameters of various Pb-related centers are determined

  11. Effects of crystallinity and impurities on the electrical conductivity of Li–La–Zr–O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong Sun, E-mail: parkj@anl.gov [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Cheng, Lei [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Material Sciences and Engineering, University of California, Berkeley, CA 94720 (United States); Zorba, Vassilia [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Mehta, Apurva [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Cabana, Jordi [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Chemistry, University of Illinois at Chicago, IL 60607 (United States); Chen, Guoying; Doeff, Marca M.; Richardson, Thomas J. [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Park, Jung Hoon [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of); Son, Ji-Won [High-Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Hong, Wan-Shick, E-mail: wshong@uos.ac.kr [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of)

    2015-02-02

    We present a study of the fabrication of thin films from a Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZO) target using pulsed laser deposition. The effects of substrate temperatures and impurities on electrochemical properties of the films were investigated. The thin films of Li–La–Zr–O were deposited at room temperature and higher temperatures on a variety of substrates. Deposition above 600 °C resulted in a mixture of cubic and tetragonal phases of LLZO, as well as a La{sub 2}Zr{sub 2}O{sub 7} impurity, and resulted in aluminum enrichment at the surface when Al-containing substrates were used. Films deposited at 600 °C exhibited the highest room temperature conductivity, 1.61 × 10{sup −6} S/cm. The chemical stability toward metallic lithium was also studied using X-ray photoelectron spectroscopy, which showed that the oxidation state of zirconium remained at + 4 following physical contact with heated lithium metal. - Highlights: • Thin film Li–La–Zr–O was deposited by pulsed laser deposition using Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Deposition above 600 °C resulted in cubic and tetragonal phases of Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Aluminum migration from the substrate to the film surface was observed. • The chemical stability toward lithium was studied by X-ray photoelectron spectroscopy.

  12. Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

    Energy Technology Data Exchange (ETDEWEB)

    Khan, I.A.; Hassan, M.; Hussain, T. [Department of Physics, GC University, 54000 Lahore (Pakistan); Ahmad, R., E-mail: ahriaz@gmail.com [Department of Physics, GC University, 54000 Lahore (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Rawat, R.S. [National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

    2009-04-01

    Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al{sub 2}O{sub 3} whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains ({approx}35 nm). A smoother surface is observed for 20 Focus shots at 0 deg. angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 {+-} 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.

  13. 3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

    Science.gov (United States)

    Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

    2018-01-01

    Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

  14. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  15. Luminescence and origin of lead-related centers in single crystalline films of Y.sub.2./sub.SiO.sub.5./sub. and Lu.sub.2./sub.SiO.sub.5./sub..

    Czech Academy of Sciences Publication Activity Database

    Babin, Vladimir; Gorbenko, V.; Krasnikov, A.; Mihóková, Eva; Nikl, Martin; Zazubovich, S.; Zorenko, Y.

    2013-01-01

    Roč. 56, Sept (2013), s. 124-128 ISSN 1350-4487 R&D Projects: GA ČR GAP204/12/0805; GA AV ČR IAA100100810 Institutional support: RVO:68378271 Keywords : luminescence * oxyorthosilicates * single crystalline films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.140, year: 2013

  16. FY 1997 report on the study on the formation condition of hetero-structure of single-crystalline semiconductor thin films; 1997 nendo chosa hokokusho (tankessho no handotai usumaku hetero kozo no keisei joken ni kansuru kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Since ion implantation causes material degradation by formation of crystalline defects, and hydrogen embrittlement deteriorates material strength, reduction of such defects has been positively studied. Study was made on a new active application of hydrogen separation into ion implantation defects. After H ion implantation of a proper depth into single-crystalline Si and SiC and successive annealing, single-crystalline films of sub-micron to several micron thick were obtained by hydrogen-induced delamination at the implantation depth due to hydrogen embrittlement in crystalline defects. The implantation depth is dependent on implantation energy. H atom forms (111) face defect through connection with dangling bond of crystalline defects. This crystal face defect forms a delamination plane through (100) face cleavage. This hydrogen embrittlement delamination by ion implantation is applicable to production of light-weight high-efficiency single-crystalline Si solar cells, and large single-crystalline SiC wafers as new resource saving process. 33 refs., 19 figs., 2 tabs.

  17. Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

    Science.gov (United States)

    Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

    2015-12-01

    Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

  18. Avalanche solar blind photodetectors based on single crystalline Mg0.47Zn0.53O thin film on Ga:ZnO substrate

    Science.gov (United States)

    Chen, Hao; Zhang, Jingtao; Chen, Zuxin; Liu, Huiqiang; Ma, Xinzhou; Li, Qiuguo; Chu, Guang; Chu, Sheng

    2018-05-01

    Single crystalline wurtzite Mg0.47Zn0.53O films were grown on Ga:ZnO substrates by pulse laser deposition. The band gap of the films was measured to be 4.43 eV. Vertical devices were fabricated for solar blind photodetection, realizing a high responsivity of 2 A W‑1 at 278 nm and  ‑5 V bias as well as a rejection ratio (R 278 nm/R 350 nm) of over 6  ×  103. A cut-off wavelength of 286 nm and a response time of 77 ms were also achieved. Besides, the devices showed stable response without degeneration under repeating illumination. The high performance of this photodetector was analyzed and attributed to the avalanche effect from high quality Mg0.47Zn0.53O/Ga:ZnO heterojunction at reverse bias. The avalanche gain was calculated to be 14.5 at  ‑10 V.

  19. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-01-01

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  20. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

    Science.gov (United States)

    Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

    2015-04-01

    A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

  1. Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

    Science.gov (United States)

    Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

    2018-06-01

    We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

  2. Transfer the multiscale texture of crystalline Si onto thin-film micromorph cell by UV nanoimprint for light trapping

    Science.gov (United States)

    Liu, Daiming; Wang, Qingkang; Wang, Qing

    2018-05-01

    Surface texturing is of great significance in light trapping for solar cells. Herein, the multiscale texture, consisting of microscale pyramids and nanoscale porous arrangement, was fabricated on crystalline Si by KOH etching and Ag-assisted HF etching processes and subsequently replicated onto glass with high fidelity by UV nanoimprint method. Light trapping of the multiscale texture was studied by spectral (reflectance, haze ratio) characterizations. Results reveal the multiscale texture provides the broadband reflection reducing, the highlighted light scattering and the additional self-cleaning behaviors. Compared with bare cell, the multiscale textured micromorph cell achieves a 4% relative increase in power conversion efficiency. This surface texturing route paves a promising way for developing low-cost, large-scale and high-efficiency solar applications.

  3. Oxidant effect of La(NO{sub 3}){sub 3}·6H{sub 2}O solution on the crystalline characteristics of nanocrystalline ZrO{sub 2} films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Nam Khen [Graduate School of Energy Science and Technology, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134 (Korea, Republic of); Vacuum Center, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Kim, Jin-Tae [Vacuum Center, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Department of Nanomaterials Science and Engineering, University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Kang, Goru; An, Jong-Ki; Nam, Minwoo [Vacuum Center, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Kim, So Yeon [Graduate School of Energy Science and Technology, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Institute of Nano Science and Technology, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763 (Korea, Republic of); Yun, Ju-Young, E-mail: jyun@kriss.re.kr [Vacuum Center, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Department of Nanomaterials Science and Engineering, University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of)

    2017-02-01

    Highlights: • The La(NO{sub 3}){sub 3}·6H{sub 2}O aqua solution is introduced as an oxidant in ALD process. • The H{sub 2}O and La(NO{sub 3}){sub 3}·6H{sub 2}O lead different crystalline properties of ZrO{sub 2} films. • Concentration of La(NO{sub 3}){sub 3}·6H{sub 2}O solution minimally influences crystalline status. - Abstract: Nanocrystalline ZrO{sub 2} films were synthesized by atomic layer deposition method using CpZr[N(CH{sub 3}){sub 2}]{sub 3} (Cp = C{sub 5}H{sub 5}) as the metal precursor and La(NO{sub 3}){sub 3}·6H{sub 2}O solution as the oxygen source. La element in the deposited ZrO{sub 2} films could not be detected as its content was below the resolution limit of the X-ray photoelectron spectroscopy. The alternative introduction of La(NO{sub 3}){sub 3}·6H{sub 2}O solution to conventionally used H{sub 2}O as the oxidant effectively altered the crystalline structure, grain size, and surface roughness of the grown ZrO{sub 2} films. Specifically, the crystalline structure of the ZrO{sub 2} film changed from a mixture of tetragonal and monoclinic phases to monoclinic phase. The average grain size also increased, and the resulting film surface became rougher. The average grain sizes of the ZrO{sub 2} films prepared from La(NO{sub 3}){sub 3}·6H{sub 2}O solution at concentrations of 10, 20, 30, and 40% were 280, 256, 208, and 200 nm, respectively, whereas that prepared using H{sub 2}O oxidant was 142 nm. However, the concentration of La(NO{sub 3}){sub 3}·6H{sub 2}O solution minimally influenced the crystalline characteristics of the nanocrystalline ZrO{sub 2} films i.e., the crystalline structure, grain size, and surface roughness except for crystallite size.

  4. Highly crystalline films of PCPDTBT with branched side chains by solvent vapor crystallization: influence on opto-electronic properties.

    Science.gov (United States)

    Fischer, Florian S U; Trefz, Daniel; Back, Justus; Kayunkid, Navaphun; Tornow, Benjamin; Albrecht, Steve; Yager, Kevin G; Singh, Gurpreet; Karim, Alamgir; Neher, Dieter; Brinkmann, Martin; Ludwigs, Sabine

    2015-02-18

    PCPDTBT, a marginally crystallizable polymer, is crystallized into a new crystal structure using solvent-vapor annealing. Highly ordered areas with three different polymer-chain orientations are identified using TEM/ED, GIWAXS, and polarized Raman spectroscopy. The optical and structural properties differ significantly from films prepared by standard device preparation protocols. Bilayer solar cells, however, show similar performance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Multi-component Ce doped (Gd,Y,La,Lu)3(AlGaSc)5O12 garnets – A new story in the development of scintillating single crystalline film screens

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Fedorov, A.; Wrzesinski, H.; Vasylkiv, Ya.

    2013-01-01

    The paper is dedicated to development of the scintillators based on single crystalline films of Ce doped (GdLaYLu) 3 (AlGaSc) 5 O 12 multi-component garnets onto Gd 3 Ga 5 O 12 substrates using the liquid phase epitaxy method. -- Highlights: •Growth of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 garnets films by LPE method. •Luminescent and scintillation properties of Ce doped (GdYLaLu) 3 (AlGaSc) 5 O 12 films. •Influence of Pb 2+ flux related impurity on the light yield of Ce 3+ emission

  6. Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

    Science.gov (United States)

    Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

    2018-04-01

    It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

  7. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

  8. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    International Nuclear Information System (INIS)

    Conde, J.C.; Martín, E.; Stefanov, S.; Alpuim, P.; Chiussi, S.

    2012-01-01

    Highlights: ► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid heating that provokes the H 2 desorption from the Si surface and bulk material. ► Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. ► These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO 2 . ► To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. ► The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25 ns pulse length and energy densities ranging from 50 mJ/cm 2 to 400 mJ/cm 2 have been calculated. Numerical results allowed us to estimate the dehydrogenation

  9. Predictive Model for the Meniscus-Guided Coating of High-Quality Organic Single-Crystalline Thin Films.

    Science.gov (United States)

    Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2016-09-01

    A model that describes solvent evaporation dynamics in meniscus-guided coating techniques is developed. In combination with a single fitting parameter, it is shown that this formula can accurately predict a processing window for various coating conditions. Organic thin-film transistors (OTFTs), fabricated by a zone-casting setup, indeed show the best performance at the predicted coating speeds with mobilities reaching 7 cm 2 V -1 s -1 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Effect of Mg co-doping on cathodoluminescence properties of LuGAGG:Ce single crystalline garnet films

    Czech Academy of Sciences Publication Activity Database

    Schauer, Petr; Lalinský, Ondřej; Kučera, M.; Lučeničová, Z.; Hanuš, M.

    2017-01-01

    Roč. 72, OCT (2017), s. 359-366 ISSN 0925-3467 R&D Projects: GA ČR(CZ) GA16-05631S; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : multicomponent garnet film * LuGAGG:Ce,Mg * liquid phase epitaxy * cathodoluminescence * scintillator * electron detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Electrical and electronic engineering Impact factor: 2.238, year: 2016

  11. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin; Hong, Wei; Li, Xiaohang; Yang, Chunyong; Chen, Shaoping

    2017-01-01

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  12. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin

    2017-09-12

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  13. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhauer, David; Preidel, Veit; Becker, Christiane [Young Investigator Group Nanostructured Silicon for Photovoltaic and Photonic Implementations (Nano-SIPPE), Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Pollakowski, Beatrix; Beckhoff, Burkhard [Physikalisch-Technische Bundesanstalt, Berlin (Germany); Baumann, Jonas; Kanngiesser, Birgit [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany); Amkreutz, Daniel; Rech, Bernd [Institut Silizium Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Back, Franziska; Rudigier-Voigt, Eveline [SCHOTT AG, Mainz (Germany)

    2015-03-01

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiO{sub x} or SiO{sub x}/SiC{sub x}) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiO{sub x} compared to the SiO{sub x}/SiC{sub x} interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Luminescent and scintillation properties of Sc3+and La3+doped Y2SiO5 powders and single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Voloshynovskii, A.; Vistovskiy, V.; Paprocki, K.; Mosińska, L.; Bilski, P.; Twardak, A.; Fedorov, A.; Nikl, M.; Mares, J.A.

    2016-01-01

    The paper is dedicated to the investigation of the luminescence of Sc 3+ and La 3+ isoelectronic impurities in Y 2 SiO 5 (YSO) single crystalline films (SCF), grown by the liquid phase epitaxy (LPE) method, and in the powder analogs of these compounds prepared using the ceramic technology. The Sc 3+ and La 3+ dopants replacing the Y 3+ cations in Y1and Y2 positions of YSO host introduce the strong complex emission bands in the UV range peaked at 330 and 345 nm, respectively. The Sc 3+ and La 3+ dopant in YSO matrix yields also the strong TSL peaks at 400 and 405 K related to the ScY and ScLa centers formation, respectively. The luminescence and scintillation properties of YSO SCFs doped with Sc 3+ and La 3+ ions and co-doped with Ce 3+ ions on the trace impurity level have been also studied in our work. We have found that the light yield (LY) of these YSO:Sc and YSO:La SCFs can reach 50–65% of LY in reference YSO:Ce SCF due to strong quenching influence of Pb 2+ ions. Finally, the potential of Sc 3+ and La 3+ doped SCF of orthosilicates for creation of heavy scintillation screens, emitting in the UV range, is discussed.

  15. Preparation of high magneto-optical performance and crystalline quality Ce{sub 1}Gd{sub 2}Fe{sub 5−x}Ga{sub x}O{sub 12} films on CLNGG substrate crystal

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Qiu-ping; Zheng, Ze-yuan; Lin, Nan-xi; Liu, Xiao-feng; Hong, Can-huang; Hu, Xiao-lin, E-mail: linamethyst@fzu.edu.cn; Zhuang, Nai-feng; Chen, Jian-zhong, E-mail: j.z.chen@fzu.edu.cn

    2016-11-01

    Thin films of Ce{sub 1}Gd{sub 2}Fe{sub 5−x}Ga{sub x}O{sub 12} (Ce,Ga:GIG) were prepared on Gd{sub 3}Ga{sub 5}O{sub 12} (GGG) and Ca{sub 2.90}Li{sub 0.30}Nb{sub 1.93}Ga{sub 2.76}O{sub 12} (CLNGG) substrates by using radio frequency magnetron sputtering technique. The phase, grain orientation, surface morphology, transmittance, magnetism and magnetic circular dichroism (MCD) properties of films were analyzed. And the effects of lattice mismatch and non-magnetic Ga{sup 3+}-doping were discussed. The results show that the films with higher crystallized quality and lower stress can be obtained by growing on CLNGG than on GGG. Moreover, the coercive force, magnetization, magneto-optical effect intensity and orientation of film can be effectively regulated by adjusting Ga{sup 3+}-doped concentration. - Highlights: • With excellent magneto-optical performance, Ce,Ga:GIG film has a good application prospect. • Ce,Ga:GIG film with high quality were prepared on CLNGG by RF magnetron sputtering. • Crystalline quality and morphology of films are intently related to the substrate. • Ga{sup 3+} doping obviously affect on magnetism and magneto-optical property of Ce:GIG film.

  16. Luminescence and energy transfer processes in (Lu,Tb).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. single crystalline films doped with Ce.sup.3+./sup.

    Czech Academy of Sciences Publication Activity Database

    Bartosiewicz, Karol; Babin, Vladimir; Nikl, Martin; Mareš, Jiří A.; Zorenko, Yu.; Gorbenko, V.

    2016-01-01

    Roč. 173, May (2016), s. 141-148 ISSN 0022-2313 R&D Projects: GA ČR GA16-15569S; GA ČR GAP204/12/0805 EU Projects: European Commission(XE) 316906 - LUMINET Institutional support: RVO:68378271 Keywords : lutetium terbium aluminum garnets * Ce 3+ * energy transfer * luminescence * single crystalline films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.686, year: 2016

  17. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-01-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Bi3+–Pr3+ energy transfer processes and luminescent properties of LuAG:Bi,Pr and YAG:Bi,Pr single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Nikl, M.; Mares, J.A.; Beitlerova, A.; Jary, V.

    2013-01-01

    Absorption, cathodoluminescence, excitation spectra of photoluminescence (PL) and PL decay kinetics were studied at 300 K for the double doped with Bi 3+ –Pr 3+ and separately doped with Bi 3+ and Pr 3+ Lu 3 Al 5 O 12 (LuAG) and Y 3 Al 5 O 12 (YAG) single crystalline film (SCF) phosphors grown by the liquid phase epitaxy method. The emission bands in the UV range arising from the intrinsic radiative transitions of Bi 3+ based centers, and emission bands in the visible range, related to the luminescence of excitons localized around Bi 3+ based centers, were identified both in Bi–Pr and Bi-doped LuAG and YAG SCFs. The energy transfer processes from the host lattice simultaneously to Bi 3+ and Pr 3+ ions and from Bi 3+ to Pr 3+ ions were investigated. Competition between Pr 3+ and Bi 3+ ions in the energy transfer processes from the LuAG and YAG hosts was evidenced. The strong decrease of the intensity of Pr 3+ luminescence both in LuAG:Pr and YAG:Pr SCFs phosphors, grown from Bi 2 O 3 flux, is observed due to the quenching influence of Bi 3+ flux related impurity. Due to overlap of the UV emission band of Bi 3+ centers with the f–d absorption bands of Pr 3+ ions in the UV range and the luminescence of excitons localized around Bi ions with the f–f absorption bands of Pr 3+ ions in the visible range, an effective energy transfer from Bi 3+ ions to Pr 3+ ions takes place in LuAG:Bi,Pr and YAG:Bi,Pr SCFs, resulting in the appearance of slower component in the decay kinetics of the Pr 3+ d–f luminescence. -- Highlights: • Bi and Pr doped film phosphor grown by liquid phase epitaxy method. • Energy transfer from Bi 3+ to Pr 3+ ions. • Strong quenching of the Pr 3+ luminescence by Bi 3+ co-dopant

  19. Technology development for crystalline silicon thin-film solar cells (TEKSI). Final report; Technologieentwicklung fuer kristalline Silizium-Duennschicht-Solarzellen (TEKSI). Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W.; Hurrle, A.; Bau, S.; Eyer, A.; Haas, F.; Huljic, D.; Kieliba, T.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Preu, R.; Reber, S.; Rentsch, J.; Schaefer, S.; Schetter, C.; Schillinger, N.; Warta, W.; Zimmermann, W.

    2002-10-01

    The results of a project aimed at the development of crystalline solar wafers are presented. All process stages were reviewed in detail with a view to industrial fabrication. This included also the further development of machinery, e.g. for selective zone melting recrystallisation, CVD silicon deposition, and characterisation of deposited films and solar cells. Not all the envisaged goals were achieved. For example, efficiencies up to 17.6 percent were possible on direct epitactic, highly doped CZ-Si substrates and with a high-efficiency process, but the normal efficiencies of solar cells on SSP or on ceramic substrates were in the range of 8-11 percent. This underlines the need for further research on the development of appropriate substrates with reproducible properties. [German] Im vorliegenden Bericht werden die Ergebnisse eines mehrjaehrigen Projekts zur Entwicklung der kristallinen Silizium-Duennschichtsolarzelle (KSD-Solarzelle) vorgestellt. Die Arbeiten waren eine konsequente Fortsetzung der bereits in einem Vorgaengerprojekt (FKZ 0328986B) bearbeiteten Themen. Alle zur Herstellung solcher Solarzellen noetigen Prozessschritte im Rahmen des am Fraunhofer ISE verfolgten Hochtemperaturpfads wurden detailliert untersucht, insbesondere im Hinblick auf eine industrielle Fertigung. Ein wesentlicher Teil der Arbeiten befasste sich deshalb auch mit der Weiterentwicklung von Geraeten, so z. B. fuer die Zonenschmelzrekristallisation, fuer die Silizumabscheidung mittels CVD-Verfahren und fuer die Charakterisierung abgeschiedener Schichten und Solarzellen. Nicht alle der ehrgeizigen Projektziele konnten erreicht werden. Auf direkt epitaxierten, hochdotierten CZ-Si-Substraten konnten zwar mit einem High-Efficiency-Prozess Wirkungsgrade bis zu 17.6%, mit fertigungsrelevanter Siebdrucktechnologie bis 13% erzielt werden. Die Wirkungsgrade von Solarzellen auf SSP oder auf Keramiksubstraten lagen aber alle im Bereich von 8-11%. Dies zeigt deutlich, dass die Entwicklung

  20. Luminescent and scintillation properties of Bi{sup 3+} doped Y{sub 2}SiO{sub 5} and Lu{sub 2}SiO{sub 5} single crystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Zorenko, Yu., E-mail: zorenko@ukw.edu.pl [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz (Poland); Gorbenko, V.; Zorenko, T. [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz (Poland); Laboratory for Optoelectronic Materials (LOM), Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv (Ukraine); Malinowski, P. [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz (Poland); Jary, V.; Kucerkova, R.; Beitlerova, A.; Mares, J.A.; Nikl, M. [Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague (Czech Republic); Fedorov, A. [Institute for Single Crystals NAS of Ukraine, 60 Lenin ave., 61001 Kharkiv (Ukraine)

    2014-10-15

    In this paper we report our follow-up research on the Bi{sup 3+} luminescence in orthosilicate compounds, focusing on absorption, luminescent and scintillation properties of YSO:Bi and LSO:Bi SCFs with the Bi concentration ranging from 0.05 to 0.18 at%. For purpose of this research, single crystalline films (SCF) of Y{sub 2}SiO{sub 5}:Bi and Lu{sub 2}SiO{sub 5}:Bi have been grown by the LPE method onto YSO and LSO substrates from the melt-solution based on Bi{sub 2}O{sub 3} flux. - Highlights: • YSO:Bi and LSO:Bi films have been grown by liquid phase epitaxy. • Bi{sup 3+} absorption and luminescence depends on Bi concentration. • Scintillation properties of YSO:Bi and LSO:Bi films have been studied.

  1. Substrate temperature study in the crystallinity of BaTiO{sub 3} thin films; Estudio de la temperatura de crecimiento sobre la cristalinidad en peliculas delgadas de BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marquez-Herrera, Alfredo [Coordinacion Academica Region Altiplano (COARA), Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico)]. E-mail: amarquez@mixteco.utm.mx; Hernandez-Rodriguez, Eric Noe; Zapata-Torres, Martin Guadalupe [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Instituto Politecnico Nacional (Mexico)]. E-mails: noehmx@hotmail.com; mzapatat@ipn.mx; Cruz-Jauregui, Maria de la Paz [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico (Mexico)]. E-mail: mcruz@cnyn.unam.mx; Melendez-Lira, Miguel angel [Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional (Mexico)]. E-mail: mlira@fis.cinvestav.mx

    2013-07-15

    Ferroelectric thin films of BaTiO{sub 3} (BTO) were grown on quartz and nichrome substrates using a BaTiO{sub 3} target by RF-Sputtering technique. It was studied the effect of the substrate temperature in the crystallization of the material. These samples were compared with films deposited at room temperature and heat treated out of the growth Chamber. Their crystallinity were studied by X-ray diffraction. Additionally, the optical characterizations were carried out by UV-Vis spectrophotometer. The growth of thin films with substrate temperature allows the obtaining of crystalline materials at temperatures below those reported by other authors. [Spanish] Peliculas delgadas Ferroelectricas de BaTiO{sub 3} (BTO) se depositaron a partir de un blanco de BaTiO{sub 3} mediante la tecnica de RF-Sputtering (erosion catodica por radio frecuencia) sobre substratos de nicromel y cuarzo. Se estudio el efecto de la temperatura de sustrato in-situ en la cristalinidad del material durante su deposito. Estas muestras fueron comparadas con peliculas depositadas a temperatura ambiente y tratadas termicamente posterior al deposito fuera de la camara de crecimiento. El estudio de la cristalinidad fue realizado mediante la tecnica de difraccion de rayos-X. Adicionalmente, se llevaron a cabo caracterizaciones opticas mediante un espectrofotometro UV-Vis. El crecimiento de peliculas delgadas con temperatura de sustrato permite la obtencion de materiales cristalinos a temperaturas por debajo de las reportadas por otros autores.

  2. Crystalline ordered states of CuIn1−xGaxSe2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

    International Nuclear Information System (INIS)

    Jeong, A.R.; Jo, W.; Song, M.; Yoon, S.

    2012-01-01

    Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2 Se and Cu–Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm −1 for CIS to 189 cm −1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films. - Highlights: ► We report structural and optical properties of CIGS films on different substrates. ► Various optical tools were used to characterize the CIGS films. ► Crystalline ordered states were examined by A1 mode of Raman spectra.

  3. Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2015-11-05

    Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

  4. Research and development of photovoltaic power system. Characterization and control of surface/interface recombination velocity of crystalline silicon thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Silicon kessho usumaku ni okeru hyomen kaimen saiketsugo sokudo no hyoka to seigyo

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, H [Hokkaido University, Sapporo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on characterization and control of surface/interface recombination velocity of crystalline silicon thin films. To optimize design and manufacture of solar cells, it is necessary to identify correctly resistance factor (or doping) of bulk of materials, bulk minority carrier life, and recombination velocity on surface, passivation interface and electrode interface. A group in the Hokkaido University has been working since a few years ago on development of non-contact and non-destructive photo-luminescence surface level spectroscopy (PLS{sup 3}). A new non-contact C-V method was also introduced. Using these methods, basic discussions were given on possibility of separate measurements on surface/interface and bulk characteristics of solar cell materials. The PLS{sup 3} method and the non-contact C-V method were used for experimental discussions on evaluation of silicon mono-crystalline and poly-crystalline materials. Discussions were given on separate evaluations by using the DLTS method. 10 figs., 2 tabs.

  5. Luminescence enhancement of ZnO-poly(methylmethacrylate) nanocomposite films by incorporation of crystalline BaTiO{sub 3} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kanamori, Tsuyoshi; Han, Yu; Nagao, Daisuke, E-mail: dnagao@tohoku.ac.jp; Kamezawa, Nao; Ishii, Haruyuki; Konno, Mikio

    2016-09-15

    Highlights: • Dielectric barium titanate (BT) nanoparticles incorporated into luminescence films. • Luminescence intensities increased by the BT nanoparticle incorporation. • Incorporation of highly dielectric nanoparticles effective for luminescence enhancement. - Abstract: Incorporation of highly dielectric nanoparticles into luminescent ZnO-polymethylmethacrylate (PMMA) nanocomposite films was undertaken to examine the effect of nanoparticle incorporation on luminescence intensity of the nanocomposite films. ZnO nanoparticles were prepared as inorganic phosphors by a precipitation method. The ZnO nanoparticles were then surface-modified with 3-methacryloxypropyltrimethoxysilane (MPTMS) to be used for fabrication of the ZnO-PMMA nanocomposite film. Barium titanate (BT) nanoparticles were synthesized with a sol-gel method as the highly dielectric nanoparticles, which were also surface-modified with the MPTMS for the incorporation into the nanocomposite films. Luminescence intensity of the nanocomposite films was successfully increased by the nanoparticle incorporation up to a BT content around 15 vol%. The luminescence intensity higher than that measured for the nanocomposite films incorporating SiO{sub 2} nanoparticles indicated that the incorporation of highly dielectric nanoparticles was an effective approach to enhance the luminescence of ZnO nanoparticles in the polymer thin films.

  6. A statistical approach for the optimization of indium tin oxide films used as a front contact in amorphous/crystalline silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Le, Anh Huy Tuan; Ahn, Shihyun; Kim, Sangho; Han, Sangmyeong; Kim, Sunbo; Park, Hyeongsik; Nguyen, Cam Phu Thi; Dao, Vinh Ai; Yi, Junsin

    2014-01-01

    Highlights: • The number of experiments was reduced by approximately 90% using Taguchi design. • The optimal condition of ITO films was obtained by Grey relational analysis. • Substrate temperature is dominant effect on opto-electrical properties of ITO films. • Using the optimal ITO films, the solar cell efficiency was absolutely increased by 1.750%. - Abstract: In heterojunction silicon with intrinsic thin layer (HIT) solar cells, the excellent opto-electrical properties of indium tin oxide (ITO) front contact play a critical role in attaining high efficiency. Therefore, in this study, we present and demonstrate an effective statistic approach based on combining Taguchi method and Grey relational analysis for the optimization of ITO films. A reduction in the number of experiments by approximately 90% is obtained by the Taguchi method through an orthogonal array. The reproduction of the effect of process parameters on single performance characteristic, however, is still ensured. In addition, an excellent trade-off between electrical and optical properties of ITO films was attained within the selected range of parameters by Grey relational analysis at power density of 0.685 W/cm 2 , working pressure of 0.4 Pa, substrate temperature of 200 °C, and post-annealing temperature of 200 °C in 30 min. Under optimal condition, the ITO films showed lowest electrical resistivity of 1.978 × 10 −4 Ω cm, and highest transmittance of 90.322%. The HIT solar cells using these ITO films as a front contact show highest efficiency of 16.616%, yielding a 1.750% absolute increase in efficiency compared to using ITO films with the initial condition. Furthermore, the analysis of variance (ANOVA) is determined to define the process parameters which have a dominant effect on the electrical and optical properties of ITO films. Based on ANOVA, we found that the substrate temperature was a key parameter which critically affects the opto-electrical properties of ITO films

  7. Correlation between microstructure and optical properties of nano-crystalline TiO{sub 2} thin films prepared by sol-gel dip coating

    Energy Technology Data Exchange (ETDEWEB)

    Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Laboratoire de Ceramiques, Universite Mentouri Constantine (Algeria); Sedrine, N. Ben; Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Bensaha, R. [Laboratoire de Ceramiques, Universite Mentouri Constantine (Algeria)

    2010-11-15

    Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. TiO{sub 2} thin films prepared using a sol-gel process have been analyzed for different annealing temperatures. Structural properties in terms of crystal structure were investigated by Raman spectroscopy. The surface morphology and composition of the films were investigated by atomic force microscopy (AFM). The optical transmittance and reflectance spectra of TiO{sub 2} thin films deposited on silicon substrate were also determined. Spectroscopic ellipsometry study was used to determine the annealing temperature effect on the optical properties and the optical gap of the TiO{sub 2} thin films. The results show that the TiO{sub 2} thin films crystallize in anatase phase between 400 and 800 deg. C, and into the anatase-rutile phase at 1000 deg. C, and further into the rutile phase at 1200 deg. C. We have found that the films consist of titanium dioxide nano-crystals. The AFM surface morphology results indicate that the particle size increases from 5 to 41 nm by increasing the annealing temperature. The TiO{sub 2} thin films have high transparency in the visible range. For annealing temperatures between 1000 and 1400 deg. C, the transmittance of the films was reduced significantly in the wavelength range of 300-800 nm due to the change of crystallite phase and composition in the films. We have demonstrated as well the decrease of the optical band gap with the increase of the annealing temperature.

  8. Conductivity of Langmuir-Blodgett films of a disk-shaped liquid-crystalline molecule-DNA complex studied by current-sensing atomic force microscopy

    Science.gov (United States)

    Nayak, Alpana; Suresh, K. A.

    2008-08-01

    We have studied the electrical conductivity in monolayer films of an ionic disk-shaped liquid-crystal molecule, pyridinium tethered with hexaalkoxytriphenylene (PyTp), and its complex with DNA by current-sensing atomic force microscopy (CS-AFM). The pure PyTp and PyTp-DNA complex monolayer films were first formed at the air-water interface and then transferred onto conducting substrates by the Langmuir-Blodgett (LB) technique to study the nanoscale electron transport through these films. The conductive tip of CS-AFM, the LB film, and the metal substrate form a nanoscopic metal-LB film-metal (M-LB-M) junction. We have measured the current-voltage (I-V) characteristics for the M-LB-M junction using CS-AFM and have analyzed the data quantitatively. We find that the I-V curves fit well to the Fowler-Nordheim (FN) model, suggesting electron tunneling to be a possible mechanism for electron transport in our system. Further, analysis of the I-V curves based on the FN model yields the barrier heights of PyTp-DNA complex and pure PyTp films. Electron transport studies of films of ionic disk-shaped liquid-crystal molecules and their complex with DNA are important from the point of view of their applications in organic electronics.

  9. The importance of orientation in proton transport of a polymer film based on an oriented self-organized columnar liquid-crystalline polyether

    Energy Technology Data Exchange (ETDEWEB)

    Tylkowski, Bartosz; Castelao, Nuria [Departament d' Enginyeria Quimica, Universitat Rovira i Virgili, Av. Paiesos Catalans, 26, E-43007, Tarragona (Spain); Giamberini, Marta, E-mail: marta.giamberini@urv.net [Departament d' Enginyeria Quimica, Universitat Rovira i Virgili, Av. Paiesos Catalans, 26, E-43007, Tarragona (Spain); Garcia-Valls, Ricard [Departament d' Enginyeria Quimica, Universitat Rovira i Virgili, Av. Paiesos Catalans, 26, E-43007, Tarragona (Spain); Reina, Jose Antonio [Departament de Quimica Analitica i Quimica Organica, Universitat Rovira i Virgili, Carrer Marcel.li Domingo s/n, E-43007, Tarragona (Spain); Gumi, Tania [Departament d' Enginyeria Quimica, Universitat Rovira i Virgili, Av. Paiesos Catalans, 26, E-43007, Tarragona (Spain)

    2012-02-01

    We prepared membranes based on a liquid-crystalline side-chain polyether obtained by chemical modification of commercial poly(epichlorohydrin) (PECH) with dendrons. This polymer exhibited a columnar structure, which could form an ion channel in the inner part. The columns were successfully oriented by taking advantage of surface interactions between the polymer and hydrophilic substrates, as confirmed by X-ray diffraction analysis (XRD), environmental scanning electron microscopy (ESEM) and optical microscopy between crossed polars (POM). Column orientation was found to be crucial for effective transport: the oriented membranes exhibited proton transport comparable to that of Nafion Registered-Sign N117 and no water uptake. An increase in sodium ion concentration in the feed phase suggested a proton/cation antiport. On the contrary, no proton transport was detected on unoriented membranes based on the same liquid-crystalline side-chain polyether or on unmodified PECH. - Highlights: Black-Right-Pointing-Pointer We prepared oriented membranes based on a liquid crystalline columnar polyether. Black-Right-Pointing-Pointer In this structure, the inner polyether chain could work as an ion channel. Black-Right-Pointing-Pointer We obtained membranes by casting a chloroform solution in the presence of water. Black-Right-Pointing-Pointer Membranes showed good proton permeability due to the presence of oriented channels.

  10. The importance of orientation in proton transport of a polymer film based on an oriented self-organized columnar liquid-crystalline polyether

    International Nuclear Information System (INIS)

    Tylkowski, Bartosz; Castelao, Nuria; Giamberini, Marta; Garcia-Valls, Ricard; Reina, José Antonio; Gumí, Tània

    2012-01-01

    We prepared membranes based on a liquid-crystalline side-chain polyether obtained by chemical modification of commercial poly(epichlorohydrin) (PECH) with dendrons. This polymer exhibited a columnar structure, which could form an ion channel in the inner part. The columns were successfully oriented by taking advantage of surface interactions between the polymer and hydrophilic substrates, as confirmed by X-ray diffraction analysis (XRD), environmental scanning electron microscopy (ESEM) and optical microscopy between crossed polars (POM). Column orientation was found to be crucial for effective transport: the oriented membranes exhibited proton transport comparable to that of Nafion® N117 and no water uptake. An increase in sodium ion concentration in the feed phase suggested a proton/cation antiport. On the contrary, no proton transport was detected on unoriented membranes based on the same liquid-crystalline side-chain polyether or on unmodified PECH. - Highlights: ► We prepared oriented membranes based on a liquid crystalline columnar polyether. ► In this structure, the inner polyether chain could work as an ion channel. ► We obtained membranes by casting a chloroform solution in the presence of water. ► Membranes showed good proton permeability due to the presence of oriented channels.

  11. An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    J. Podder

    2011-11-01

    Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

  12. Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells.

    Science.gov (United States)

    Hussain, Shahzada Qamar; Oh, Woong-Kyo; Kim, Sunbo; Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Lee, Youngseok; Dao, Vinh Ai; Velumani, S; Yi, Junsin

    2014-12-01

    Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 x 10(-4) Ω x cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ(ITO)) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The Φ(ITO) increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

  13. Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

    International Nuclear Information System (INIS)

    Son, Phil Kook; Kim, Tae Hyung; Choi, Suk Won; Gwag, Jin Seog

    2012-01-01

    The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indium tinoxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 .deg. C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

  14. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  15. Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

    Science.gov (United States)

    Son, Phil Kook; Kim, Taehyung; Choi, Suk-Won; Gwag, Jin Seog

    2012-08-01

    The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indiumtin-oxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 °C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

  16. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  17. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD; Variation von Kristallinitaet und Stoechiometrie in mittels PLD hergestellten Schichten aus Galliumoxid, Galliumnitrid und Bariumzirkonat

    Energy Technology Data Exchange (ETDEWEB)

    Brendt, Jochen

    2011-08-05

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  18. Growth of crystalline semiconductor materials on crystal surfaces

    CERN Document Server

    Aleksandrov, L

    2013-01-01

    Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

  19. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-12-21

    This report presents the results of work conducted between September 2014 and July 2015 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program.

  20. Optical, electrical and solid state properties of nano crystalline zinc ...

    African Journals Online (AJOL)

    Semiconducting Zinc Sulphide (ZnS) thin films were deposited on glass substrate using relatively simple Chemical Bath Deposition (CBD) technique. Nano crystalline ZnS thin films were fabricated in the study. Optical characterization of the films showed that the materials are transparent to visible light, opaque to ultraviolet ...

  1. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  2. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China (China); Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Liu, Xuehua; Zhang, Jinping; Zhang, Yi [Platform for Characterization & Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Fang, Qi; Ren, Zhong [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Bai, Yu [School of Nano-Science and Nano-Engineering, Xi’an Jiaotong University, Suzhou, 215123 (China)

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  3. Single crystalline growth of a soluble organic semiconductor in a parallel aligned liquid crystal solvent using rubbing-treated polyimide films

    Science.gov (United States)

    Matsuzaki, Tomoya; Shibata, Yosei; Takeda, Risa; Ishinabe, Takahiro; Fujikake, Hideo

    2017-01-01

    For directional control of organic single crystals, we propose a crystal growth method using liquid crystal as the solvent. In this study, we examined the formation of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single crystals using a parallel aligned liquid crystal (LC) cell and rubbing-treated polyimide films in order to clarify the effects of LC alignment on anisotropic C8-BTBT crystal growth. Based on the results, we found that the crystal growth direction of C8-BTBT single crystals was related to the direction of the aligned LC molecules because of rubbing treatment. Moreover, by optical evaluation, we found that the C8-BTBT single crystals have a aligned molecular structure.

  4. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  5. Luminescence characteristics of Pb2+ centres in undoped and Ce3+-doped Lu3Al5O12 single-crystalline films and Pb2+→Ce3+ energy transfer processes

    International Nuclear Information System (INIS)

    Babin, V.; Gorbenko, V.; Makhov, A.; Mares, J.A.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

    2007-01-01

    At 4.2-350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics were studied under excitation in the 2.5-15 eV energy range for the undoped and Ce 3+ -doped Lu 3 Al 5 O 12 (LuAG) single-crystalline films grown by liquid phase epitaxy method from the PbO-based flux. The spectral bands arising from the single Pb 2+ -based centres were identified. The processes of energy transfer from the host lattice to Pb 2+ and Ce 3+ ions and from Pb 2+ to Ce 3+ ions were investigated. Competition between Pb 2+ and Ce 3+ ions in the processes of energy transfer from the LuAG crystal lattice was evidenced especially in the exciton absorption region. Due to overlap of the 3.61 eV emission band of Pb 2+ centres with the 3.6 eV absorption band of Ce 3+ centres, an effective nonradiative energy transfer from Pb 2+ ions to Ce 3+ ions takes place, resulting in the appearance of slower component in the luminescence decay kinetics of Ce 3+ centres and decrease of the Ce 3+ -related luminescence intensity

  6. Crystalline and Crystalline International Disposal Activities

    Energy Technology Data Exchange (ETDEWEB)

    Viswanathan, Hari S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, Timothy M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, Jeffrey De' Haven [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, Satish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, Nataliia [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, Paul William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-06

    This report presents the results of work conducted between September 2015 and July 2016 at Los Alamos National Laboratory in the crystalline disposal and crystalline international disposal work packages of the Used Fuel Disposition Campaign (UFDC) for DOE-NE’s Fuel Cycle Research and Development program. Los Alamos focused on two main activities during this period: Discrete fracture network (DFN) modeling to describe flow and radionuclide transport in complex fracture networks that are typical of crystalline rock environments, and a comprehensive interpretation of three different colloid-facilitated radionuclide transport experiments conducted in a fractured granodiorite at the Grimsel Test Site in Switzerland between 2002 and 2013. Chapter 1 presents the results of the DFN work and is divided into three main sections: (1) we show results of our recent study on the correlation between fracture size and fracture transmissivity (2) we present an analysis and visualization prototype using the concept of a flow topology graph for characterization of discrete fracture networks, and (3) we describe the Crystalline International work in support of the Swedish Task Force. Chapter 2 presents interpretation of the colloidfacilitated radionuclide transport experiments in the crystalline rock at the Grimsel Test Site.

  7. Crystalline Silica Primer

    Science.gov (United States)

    ,

    1992-01-01

    Crystalline silica is the scientific name for a group of minerals composed of silicon and oxygen. The term crystalline refers to the fact that the oxygen and silicon atoms are arranged in a threedimensional repeating pattern. This group of minerals has shaped human history since the beginning of civilization. From the sand used for making glass to the piezoelectric quartz crystals used in advanced communication systems, crystalline silica has been a part of our technological development. Crystalline silica's pervasiveness in our technology is matched only by its abundance in nature. It's found in samples from every geologic era and from every location around the globe. Scientists have known for decades that prolonged and excessive exposure to crystalline silica dust in mining environments can cause silicosis, a noncancerous lung disease. During the 1980's, studies were conducted that suggested that crystalline silica also was a carcinogen. As a result of these findings, crystalline silica has been regulated under the Occupational Safety and Health Administration's (OSHA) Hazard Communication Standard (HCS). Under HCS, OSHAregulated businesses that use materials containing 0.1% or more crystalline silica must follow Federal guidelines concerning hazard communication and worker training. Although the HCS does not require that samples be analyzed for crystalline silica, mineral suppliers or OSHAregulated

  8. What Is Crystalline Silica?

    Science.gov (United States)

    ... and ceramic manufacturing and the tool and die, steel and foundry industries. Crystalline silica is used in manufacturing, household abrasives, adhesives, paints, soaps, and glass. Additionally, ...

  9. Origin of Bi.sup.3+./sup.-related luminescencecentres in Lu.sub.3./sub.Al.sub.5./sub.O.sub.12./sub. :Bi and Y.sub.3./sub.Al.sub.5./sub.O.sub.12./sub.:Bi single crystalline films and the structure of their relaxed excited states

    Czech Academy of Sciences Publication Activity Database

    Babin, V.; Gorbenko, V.; Krasnikov, A.; Makhov, A.; Mihóková, Eva; Nikl, Martin; Zazubovich, S.; Zorenko, Y.

    2012-01-01

    Roč. 249, č. 5 (2012), s. 1039-1045 ISSN 0370-1972 R&D Projects: GA ČR GA202/08/0893; GA AV ČR IAA100100810 Institutional research plan: CEZ:AV0Z10100521 Keywords : LuAG:Bi * YAG:Bi * single crystalline films * time-resolved photoluminescence * triplet relaxed excited state Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2012

  10. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    Science.gov (United States)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  11. Biomimetic processing of oriented crystalline ceramic layers

    Energy Technology Data Exchange (ETDEWEB)

    Cesarano, J.; Shelnutt, J.A.

    1997-10-01

    The aim of this project was to develop the capabilities for Sandia to fabricate self assembled Langmuir-Blodgett (LB) films of various materials and to exploit their two-dimensional crystalline structure to promote the growth of oriented thin films of inorganic materials at room temperature. This includes the design and synthesis of Langmuir-active (amphiphilic) organic molecules with end groups offering high nucleation potential for various ceramics. A longer range goal is that of understanding the underlying principles, making it feasible to use the techniques presented in this report to fabricate unique oriented films of various materials for electronic, sensor, and membrane applications. Therefore, whenever possible, work completed in this report was completed with the intention of addressing the fundamental phenomena underlying the growth of crystalline, inorganic films on template layers of highly organized organic molecules. This problem was inspired by biological processes, which often produce exquisitely engineered structures via templated growth on polymeric layers. Seashells, for example, exhibit great toughness owing to their fine brick-and-mortar structure that results from templated growth of calcium carbonate on top of layers of ordered organic proteins. A key goal in this work, therefore, is to demonstrate a positive correlation between the order and orientation of the template layer and that of the crystalline ceramic material grown upon it. The work completed was comprised of several parallel efforts that encompassed the entire spectrum of biomimetic growth from solution. Studies were completed on seashells and the mechanisms of growth for calcium carbonate. Studies were completed on the characterization of LB films and the capability developed for the in-house fabrication of these films. Standard films of fatty acids were studied as well as novel polypeptides and porphyrins that were synthesized.

  12. Bio-based liquid crystalline polyesters

    Science.gov (United States)

    Wilsens, Carolus; Rastogi, Sanjay; Dutch Collaboration

    2013-03-01

    The reported thin-film polymerization has been used as a screening method in order to find bio-based liquid crystalline polyesters with convenient melting temperatures for melt-processing purposes. An in depth study of the structural, morphological and chemical changes occurring during the ongoing polycondensation reactions of these polymers have been performed. Structural and conformational changes during polymerization for different compositions have been followed by time resolved X-ray and Infrared spectroscopy. In this study, bio-based monomers such as vanillic acid and 2,5-furandicarboxylic acid are successfully incorporated in liquid crystalline polyesters and it is shown that bio-based liquid crystalline polymers with high aromatic content and convenient processing temperatures can be synthesized. Special thanks to the Dutch Polymer Institute for financial support

  13. Physical Properties and Antibacterial Efficacy of Biodegradable Chitosan Films

    OpenAIRE

    中島, 照夫

    2009-01-01

    [Synopsis] Chitin, chitosan and quaternary chitosan films were prepared, and the physical properties and the antibacterial activities of chitosan and quaternary chitosan films were evaluated. The tensile strength of chitin films was 30~40% lower than that of chitosan films, but the crystallinity of chitin film was much higher than that of chitosan films. The crystallinity and orientation of crystallites were hardly affected by the four kinds of solvent chosen to cast chitosan films, but a de...

  14. Crystalline color superconductivity

    International Nuclear Information System (INIS)

    Alford, Mark; Bowers, Jeffrey A.; Rajagopal, Krishna

    2001-01-01

    In any context in which color superconductivity arises in nature, it is likely to involve pairing between species of quarks with differing chemical potentials. For suitable values of the differences between chemical potentials, Cooper pairs with nonzero total momentum are favored, as was first realized by Larkin, Ovchinnikov, Fulde, and Ferrell (LOFF). Condensates of this sort spontaneously break translational and rotational invariance, leading to gaps which vary periodically in a crystalline pattern. Unlike the original LOFF state, these crystalline quark matter condensates include both spin-zero and spin-one Cooper pairs. We explore the range of parameters for which crystalline color superconductivity arises in the QCD phase diagram. If in some shell within the quark matter core of a neutron star (or within a strange quark star) the quark number densities are such that crystalline color superconductivity arises, rotational vortices may be pinned in this shell, making it a locus for glitch phenomena

  15. Facile "modular assembly" for fast construction of a highly oriented crystalline MOF nanofilm.

    Science.gov (United States)

    Xu, Gang; Yamada, Teppei; Otsubo, Kazuya; Sakaida, Shun; Kitagawa, Hiroshi

    2012-10-10

    The preparation of crystalline, ordered thin films of metal-organic frameworks (MOFs) will be a critical process for MOF-based nanodevices in the future. MOF thin films with perfect orientation and excellent crystallinity were formed with novel nanosheet-structured components, Cu-TCPP [TCPP = 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin], by a new "modular assembly" strategy. The modular assembly process involves two steps: a "modularization" step is used to synthesize highly crystalline "modules" with a nanosized structure that can be conveniently assembled into a thin film in the following "assembly" step. With this method, MOF thin films can easily be set up on different substrates at very high speed with controllable thickness. This new approach also enabled us to prepare highly oriented crystalline thin films of MOFs that cannot be prepared in thin-film form by traditional techniques.

  16. Dissolution of crystalline ceramics

    International Nuclear Information System (INIS)

    White, W.B.

    1982-01-01

    The present program objectives are to lay out the fundamentals of crystalline waste form dissolution. Nuclear waste ceramics are polycrystalline. An assumption of the work is that to the first order, the release rate of a particular radionuclide is the surface-weighted sum of the release rates of the radionuclide from each crystalline form that contains it. In the second order, of course, there will be synergistic effects. There will be also grain boundary and other microstructural influences. As a first approximation, we have selected crystalline phases one at a time. The sequence of investigations and measurements is: (i) Identification of the actual chemical reactions of dissolution including identification of the solid reaction products if such occur. (ii) The rates of these reactions are then determined empirically to give what may be called macroscopic kinetics. (iii) Determination of the rate-controlling mechanisms. (iv) If the rate is controlled by surface reactions, the final step would be to determine the atomic kinetics, that is the specific atomic reactions that occur at the dissolving interface. Our concern with the crystalline forms are in two areas: The crystalline components of the reference ceramic waste form and related ceramics and the alumino-silicate phases that appear in some experimental waste forms and as waste-rock interaction products. Specific compounds are: (1) Reference Ceramic Phases (zirconolite, magnetoplumbite, spinel, Tc-bearing spinel and perovskite); (2) Aluminosilicate phases (nepheline, pollucite, CsAlSi 5 O 12 , Sr-feldspar). 5 figures, 1 table

  17. Nanomembrane structures having mixed crystalline orientations and compositions

    Science.gov (United States)

    Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

    2014-08-12

    The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

  18. Thermodynamics of Crystalline States

    CERN Document Server

    Fujimoto, Minoru

    2010-01-01

    Thermodynamics is a well-established discipline of physics for properties of matter in thermal equilibrium surroundings. Applying to crystals, however, the laws encounter undefined properties of crystal lattices, which therefore need to be determined for a clear and well-defined description of crystalline states. Thermodynamics of Crystalline States explores the roles played by order variables and dynamic lattices in crystals in a wholly new way. This book is divided into three parts. The book begins by clarifying basic concepts for stable crystals. Next, binary phase transitions are discussed to study collective motion of order variables, as described mostly as classical phenomena. In the third part, the multi-electron system is discussed theoretically, as a quantum-mechanical example, for the superconducting state in metallic crystals. Throughout the book, the role played by the lattice is emphasized and examined in-depth. Thermodynamics of Crystalline States is an introductory treatise and textbook on meso...

  19. Liquid crystalline dihydroazulene photoswitches

    DEFF Research Database (Denmark)

    Petersen, Anne Ugleholdt; Jevric, Martyn; Mandle, Richard J.

    2015-01-01

    A large selection of photochromic dihydroazulene (DHA) molecules incorporating various substituents at position 2 of the DHA core was prepared and investigated for their ability to form liquid crystalline phases. Incorporation of an octyloxy-substituted biphenyl substituent resulted in nematic...... phase behavior and it was possible to convert one such compound partly into its vinylheptafulvene (VHF) isomer upon irradiation with light when in the liquid crystalline phase. This conversion resulted in an increase in the molecular alignment of the phase. In time, the meta-stable VHF returns...... to the DHA where the alignment is maintained. The systematic structural variation has revealed that a biaryl spacer between the DHA and the alkyl chain is needed for liquid crystallinity and that the one aromatic ring in the spacer cannot be substituted by a triazole. This work presents an important step...

  20. Lu.sub.2./sub.SiO.sub.5./sub.:Ce and Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystals and single crystalline film scintillators: comparisom of the luminescent and scintillation properties

    Czech Academy of Sciences Publication Activity Database

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Mareš, Jiří A.; Nikl, Martin; Kučera, M.

    2013-01-01

    Roč. 56, SEP (2013), s. 84-89 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation 2012 /8./, LUMDETR 2012. Halle (Saale), 10.09.2012-14.09.2012] R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Lu 2 SiO 5 :Ce * Y 2 SiO 2 * single crystalline film, * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.140, year: 2013

  1. Liquid Crystalline Semiconductors Materials, properties and applications

    CERN Document Server

    Kelly, Stephen; O'Neill, Mary

    2013-01-01

    This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. Within the family of organic electronic materials, liquid crystals are relative newcomers. The first electronically conducting liquid crystals were reported in 1988 but already a substantial literature has developed. The advantage of liquid crystalline semiconductors is that they have the easy processability of amorphous and polymeric semiconductors but they usually have higher charge carrier mobilities. Their mobilities do not reach the levels seen in crystalline organics but they circumvent all of t...

  2. Optical responses in single-crystalline organic microcavities

    International Nuclear Information System (INIS)

    Kondo, H.; Yamamoto, Y.; Takeda, A.; Yamamoto, S.; Kurisu, H.

    2008-01-01

    The anisotropic response of cavity polaritons is investigated in an organic microcavity composed of a single-crystalline anthracene film sandwiched between two distributed Bragg reflectors. Upper and lower cavity polariton modes are observed as sharp spectral peaks in the transmission spectra. Dispersion relation for cavity polaritons is obtained as a function of thickness of the thin film. Using this relation, the vacuum Rabi splitting energy for this system is estimated to be 340 meV

  3. Optical responses in single-crystalline organic microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, H. [Department of Physics, Ehime University, Matsuyama, 2-5 Bunkyo-cho, Matsuyama 790-8577 (Japan)], E-mail: kondo@phys.sci.ehime-u.ac.jp; Yamamoto, Y.; Takeda, A. [Department of Physics, Ehime University, Matsuyama, 2-5 Bunkyo-cho, Matsuyama 790-8577 (Japan); Yamamoto, S.; Kurisu, H. [Department of Advanced Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

    2008-05-15

    The anisotropic response of cavity polaritons is investigated in an organic microcavity composed of a single-crystalline anthracene film sandwiched between two distributed Bragg reflectors. Upper and lower cavity polariton modes are observed as sharp spectral peaks in the transmission spectra. Dispersion relation for cavity polaritons is obtained as a function of thickness of the thin film. Using this relation, the vacuum Rabi splitting energy for this system is estimated to be 340 meV.

  4. Crystalline structure of metals

    International Nuclear Information System (INIS)

    Holas, A.

    1972-01-01

    An attempt is made to find the crystalline structure of metals on the basis of the existing theory of metals. The considerations are limited to the case of free crystals, that is, not subjected to any stresses and with T=0. The energy of the crystal lattice has been defined and the dependence of each term on structures and other properties of metals has been described. The energy has been used to find the values of crystalline structure parameters as the values at which the energy has an absolute minimum. The stability of the structure has been considered in cases of volume changes and shearing deformations. A semiqualitative description has been obtained which explains characteristic properties of one-electron metals. (S.B.)

  5. Thermodynamics of Crystalline States

    CERN Document Server

    Fujimoto, Minoru

    2013-01-01

    Thermodynamics is a well-established discipline of physics for properties of matter in thermal equilibrium with the surroundings. Applying to crystals, however, the laws encounter undefined properties of crystal lattice, which therefore need to be determined for a clear and well-defined description of crystalline states. Thermodynamics of Crystalline States explores the roles played by order variables and dynamic lattices in crystals in a wholly new way. The book begins by clarifying basic concepts for stable crystals. Next, binary phase transitions are discussed to study collective motion of order variables, as described mostly as classical phenomena. New to this edition is the examination of magnetic crystals, where magnetic symmetry is essential for magnetic phase transitions. The multi-electron system is also discussed  theoretically, as a quantum-mechanical example, for superconductivity in metallic crystals. Throughout the book, the role played by the lattice is emphasized and studied in-depth. Thermod...

  6. Crystalline beam ground state

    International Nuclear Information System (INIS)

    Wei, Jie; Li, Xiao-Ping

    1993-01-01

    In order to employ molecular dynamics (MD) methods, commonly used in condensed matter physics, we have derived the equations of motion for a beam of charged particles in the rotating rest frame of the reference particle. We include in the formalism that the particles are confined by the guiding and focusing magnetic fields, and that they are confined in a conducting vacuum pipe while interacting with each other via a Coulomb force. Numerical simulations using MD methods has been performed to obtain the equilibrium crystalline beam structure. The effect of the shearing force, centrifugal force, and azimuthal variation of the focusing strength are investigated. It is found that a constant gradient storage ring can not give a crystalline beam, but that an alternating-gradient (AG) structure can. In such a machine the ground state is, except for one-dimensional (1-D) crystals, time dependent. The ground state is a zero entropy state, despite the time-dependent, periodic variation of the focusing force. The nature of the ground state, similar to that found by Schiffer et al. depends upon the density and the relative focusing strengths in the transverse directions. At low density, the crystal is 1-D. As the density increases, it transforms into various kinds of 2-D and 3-D crystals. If the energy of the beam is higher than the transition energy of the machine, the crystalline structure can not be formed for lack of radial focusing

  7. Superacid Passivation of Crystalline Silicon Surfaces.

    Science.gov (United States)

    Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

    2016-09-14

    The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

  8. Optical characteristics of crystalline antimony sulphide (Sb 2 S 3 ...

    African Journals Online (AJOL)

    This paper presents the important optical characteristics of crystalline Sb2S3 film deposited on glass substrate using solution growth technique at 300k. These characteristics were analyzed using PYEUNICAM SP8-100 spectrophotometer in the range of UV-VIS-NIR while the morphology and the structural composition were ...

  9. Raman crystallinity and Hall Effect studies of microcrystalline silicon ...

    African Journals Online (AJOL)

    Aluminium induced crystallization (AIC) was used to crystallize sputtered amorphous silicon thin films on aluminium‐coated glass at annealing temperatures ranging from 250‐520°C in vacuum. Crystalline volume fractions were measured by Raman spectrometry as a function of annealing temperature. It was shown that the ...

  10. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of thin film poly-crystalline solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been performed on a high throughput forming technology and a modularization technology for thin film poly-crystalline solar cell modules. This paper summarizes the achievements in fiscal 1999. In developing the high throughput forming technology for a high-quality thin film, research has been made on a low-cost VEST process to re-utilize substrates by separating the thin film from the substrate. In the melting re-crystallization process, it was discovered that plasticity deformation of the substrate can be reduced greatly by raising the substrate heating temperatures. It was also found out that substrate warping amount can be reduced to about one-fifth of the conventional amount by making the thickness greater than 1.5 mm and raising the heating temperatures higher than 1300 degree C. In developing the thin film modularization technology, it was indicated that the property improving effect remains the same even if the hydrogen passivation method is changed from the hydrogen ion injection to the hydrogen plasma processing. In the trial fabrication of the thin film modules, a conversion efficiency of 13.1% was achieved in nine-cell structured modules. (NEDO)

  11. PTFE films with improved flexibility

    Science.gov (United States)

    Muraca, R. F.; Koch, A. A.

    1972-01-01

    Development and application of flexible polytetrafluroethylene films for expulsion bladders in spacecraft propellant tanks are described. Flexibility of material is obtained by reducing crystallinity through annealing and quenching in water. Physical and mechanical properties of material are presented.

  12. WORKSHOP: Crystalline beams

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    Following pioneer work by specialists at the Soviet Novosibirsk Laboratory some ten years ago, interest developed in the possibility of 'freezing' ion beams in storage rings by pushing cooling (to smooth out beam behaviour) to its limits, the final goal being to lock the ions into a neat crystal pattern. After advances by groups working on laser cooled ions in traps, and with several cooling rings now in operation, a workshop on crystalline ion beams was organized recently by the GSI (Darmstadt) Laboratory and held at Wertheim in Germany

  13. Luminescence and energy transfer processes in Ce.sup.3+./sup. activated (Gd,Tb).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. single crystalline films

    Czech Academy of Sciences Publication Activity Database

    Bartosiewicz, Karol; Babin, Vladimir; Mareš, Jiří A.; Beitlerová, Alena; Zorenko, Yu.; Iskaliyeva, A.; Gorbenko, V.; Bryknar, Z.; Nikl, Martin

    2017-01-01

    Roč. 188, Aug (2017), s. 60-66 ISSN 0022-2313 R&D Projects: GA ČR GA16-15569S; GA MŠk LO1409 EU Projects: European Commission(XE) 316906 - LUMINET Institutional support: RVO:68378271 Keywords : gadolinium terbium aluminum garnets * Ce 3+ * energy transfer * luminescence * single crystalline flms Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.686, year: 2016

  14. Crystalline beam ground state

    International Nuclear Information System (INIS)

    Wei, Jie; Li, Xiao-Ping; Sessler, A.M.

    1993-01-01

    In order to employ Molecular Dynamics method, commonly used in condensed matter physics, we have derived the equations of motion for a beam of charged particles in the rotating rest frame of the reference particle. We include in the formalism that the particles are confined by the guiding and focusing magnetic fields, and that they are confined in a conducting vacuum pipe while interacting with each other via a Coulomb force. Numerical simulations has been performed to obtain the equilibrium structure. The effects of the shearing force, centrifugal force, and azimuthal variation of the focusing strength are investigated. It is found that a constant gradient storage ring can not give a crystalline beam, but that an alternating-gradient (AG) structure can. In such a machine the ground state is, except for one-dimensional (1-D) crystals, time-dependent. The ground state is a zero entropy state, despite the time-dependent, periodic variation of the focusing force. The nature of the ground state, similar to that found by Rahman and Schiffer, depends upon the density and the relative focusing strengths in the transverse directions. At low density, the crystal is 1-D. As the density increases, it transforms into various kinds of 2-D and 3-D crystals. If the energy of the beam is higher than the transition energy of the machine, the crystalline structure can not be formed for lack of radial focusing

  15. Crystalline beam ground state

    International Nuclear Information System (INIS)

    Wei, J.; Li, X.P.

    1993-01-01

    In order to employ the Molecular Dynamics method, commonly used in condensed matter physics, the authors have derived the equations of motion for a beam of charged particles in the rotating rest frame of the reference particle. They include in the formalism that the particles are confined by the guiding and focusing magnetic fields, and that they are confined in a conducting vacuum pipe while interacting with each other via a Coulomb force. Numerical simulations has been performed to obtain the equilibrium structure. The effects of the shearing force, centrifugal force, and azimuthal variation of the focusing strength are investigated. It is found that a constant gradient storage ring can not give a crystalline beam, but that an alternating-gradient (AG) structure can. In such a machine the ground state is, except for one-dimensional (1-D) crystals, time-dependent. The ground state is a zero entropy state, despite the time-dependent, periodic variation of the focusing force. The nature of the ground state, similar to that found by Rahman and Schiffer, depends upon the density and the relative focusing strengths in the transverse directions. At low density, the crystal is 1-D. As the density increases, it transforms into various kinds of 2-D and 3-D crystals. If the energy of the beam is higher than the transition energy of the machine, the crystalline structure can not be formed for lack of radial focusing

  16. Liquid crystalline order in polymers

    CERN Document Server

    Blumstein, Alexandre

    1978-01-01

    Liquid Crystalline Order in Polymers examines the topic of liquid crystalline order in systems containing rigid synthetic macromolecular chains. Each chapter of the book provides a review of one important area of the field. Chapter 1 discusses scattering in polymer systems with liquid crystalline order. It also introduces the field of liquid crystals. Chapter 2 treats the origin of liquid crystalline order in macromolecules by describing the in-depth study of conformation of such macromolecules in their unassociated state. The chapters that follow describe successively the liquid crystalli

  17. Crystalline lens radioprotectors

    International Nuclear Information System (INIS)

    Belkacemi, Y.; Pasquier, D.; Castelain, B.; Lartigau, E.; Warnet, J.M.

    2003-01-01

    During more than a half of century, numerous compounds have been tested in different models against radiation-induced cataract. In this report, we will review the radioprotectors that have been already tested for non-human crystalline lens protection. We will focus on the most important published studies in this topic and the mechanisms of cyto-protection reported in. vitro and in. vivo from animals. The most frequent mechanisms incriminated in the cyto-protective effect are: free radical scavenging, limitation of lipid peroxidation, modulation of cycle progression increase of intracellular reduced glutathione pool, reduction of DNA strand breaks and limitation of apoptotic cell death. Arnifostine (or Ethyol) and anethole dithiolethione (or Sulfarlem), already used clinically as chemo- and radio-protectants, could be further test?r for ocular radioprotection particularly for radiation-induced cataract. (author)

  18. Groundwater in crystalline bedrock

    International Nuclear Information System (INIS)

    Palmqvist, K.

    1990-06-01

    The aim of this project was to make detailed descriptions of the geological conditions and the different kinds of leakage in some tunnels in Sweden, to be able to describe the presence of ground water in crystalline bedrock. The studies were carried out in TBM tunnels as well as in conventionally drilled and blasted tunnels. Thanks to this, it has been possible to compare the pattern and appearance of ground water leakage in TBM tunnels and in blasted tunnels. On the basis of some experiments in a TBM tunnel, it has been confirmed that a detailed mapping of leakage gives a good picture of the flow paths and their aquiferous qualities in the bedrock. The same picture is found to apply even in cautious blasted tunnels. It is shown that the ground water flow paths in crystalline bedrock are usually restricted to small channels along only small parts of the fractures. This is also true for fracture zones. It has also been found that the number of flow paths generally increases with the degree of tectonisation, up to a given point. With further tectonisation the bedrock is more or less crushed which, along with mineral alteration, leaves only a little space left for the formation of water channels. The largest individual flow paths are usually found in fracture zones. The total amount of ground water leakage per m tunnel is also greater in fracture zones than in the bedrock between the fracture zones. In mapping visible leakage, five classes have been distinguished according to size. Where possible, the individual leak inflow has been measured during the mapping process. The quantification of the leakage classes made in different tunnels are compared, and some quantification standards suggested. A comparison of leakage in different rock types, tectonic zones, fractures etc is also presented. (author)

  19. Solution processed nanogap organic diodes based on liquid crystalline materials

    Science.gov (United States)

    Wang, Yi-Fei; Iino, Hiroaki; Hanna, Jun-ichi

    2017-09-01

    Co-planar nanogap organic diodes were fabricated with smectic liquid crystalline materials of the benzothienobenzothiophene (BTBT) derivative by a spin-coating technique. A high rectification ratio of the order of 106 at ±3 V was achieved when a liquid crystalline material of 2,7-didecyl benzothieno[3,2-b][1]benzothiophene (10-BTBT-10) was used in a device configuration of Al/10-BTBT-10/pentafluorobenzenethiol-treated Au on a glass substrate, which was 4 orders higher than that of the device based on non-liquid crystalline materials of 2,7-dibutyl benzothieno[3,2-b][1]benzothiophene (4-BTBT-4) and BTBT. Similar results were also observed when another liquid crystalline material of ω, ω'-dioctylterthiophene (8-TTP-8) and a non-liquid crystalline material of terthiophene (TTP) were used. These improved rectifications can be ascribed to the self-assembly properties and controllable molecular orientation of liquid crystalline materials, which made uniform perpendicular oriented polycrystalline films favorable for superior charge transport in nano-channels.

  20. Nanostructured light-absorbing crystalline CuIn{sub (1–x)}Ga{sub x}Se{sub 2} thin films grown through high flux, low energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hall, Allen J.; Hebert, Damon; Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Shah, Amish B. [Center for Microanalysis of Materials, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Ave, Urbana, Illinois 61801 (United States); Bettge, Martin [Chemical Sciences and Engineering, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60438 (United States)

    2013-10-21

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620–740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600–670 °C) and high rf power (80–400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by (112){sub T} facets. At 80–400 W rf power and 640–740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong (112){sub T} texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0–50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of (112){sub T} planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  1. Crystalline Bioceramic Materials

    Directory of Open Access Journals (Sweden)

    de Aza, P. N.

    2005-06-01

    Full Text Available A strong interest in the use of ceramics for biomedical engineering applications developed in the late 1960´s. Used initially as alternatives to metallic materials in order to increase the biocompatibility of implants, bioceramics have become a diverse class of biomaterials, presently including three basic types: relatively bioinert ceramics; bioactive or surface reactive bioceramics and bioresorbable ceramics. This review will only refer to bioceramics “sensus stricto”, it is to say, those ceramic materials constituted for nonmetallic inorganic compounds, crystallines and consolidated by thermal treatments of powders to high temperatures. Leaving bioglasses, glass-ceramics and biocements apart, since, although all of them are obtained by thermal treatments to high temperatures, the first are amorphous, the second are obtained by desvitrification of a glass and in them vitreous phase normally prevails on the crystalline phases and the third are consolidated by means of a hydraulic or chemical reaction to room temperature. A review of the composition, physiochemical properties and biological behaviour of the principal types of crystalline bioceramics is given, based on the literature data and on the own experience of the authors.

    A finales de los años sesenta se despertó un gran interés por el uso de los materiales cerámicos para aplicaciones biomédicas. Inicialmente utilizados como una alternativa a los materiales metálicos, con el propósito de incrementar la biocompatibilidad de los implantes, las biocerámicas se han convertido en una clase diversa de biomateriales, incluyendo actualmente tres tipos: cerámicas cuasi inertes; cerámicas bioactivas o reactivas superficialmente y cerámicas reabsorbibles o biodegradables. En la presente revisión se hace referencia a las biocerámicas en sentido estricto, es decir, a aquellos materiales constitutitos por compuestos inorgánicos no metálicos, cristalinos y consolidados

  2. Morphology and Curie temperature engineering in crystalline La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films on Si by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nori, Rajashree, E-mail: rajsre@ee.iitb.ac.in; Ganguly, U.; Ravi Chandra Raju, N.; Pinto, R.; Ramgopal Rao, V. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology-Bombay (IIT-B), Mumbai 400076 (India); Kale, S. N. [Department of Applied Physics, Defence Institute of Advanced Technology (DIAT), Pune 411025 (India); Sutar, D. S. [Central Surface Analytical Facility, Indian Institute of Technology-Bombay (IIT-B), Mumbai 400076 (India)

    2014-01-21

    Of all the colossal magnetoresistant manganites, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As the first step towards this goal, it needs to be integrated with silicon via a well-defined process that provides morphology and phase control, along with reproducibility. This work demonstrates the development of pulsed laser deposition (PLD) process parameter regimes for dense and columnar morphology LSMO films directly on Si. These regimes are postulated on the foundations of a pressure-distance scaling law and their limits are defined post experimental validation. The laser spot size is seen to play an important role in tandem with the pressure-distance scaling law to provide morphology control during LSMO deposition on lattice-mismatched Si substrate. Additionally, phase stability of the deposited films in these regimes is evaluated through magnetometry measurements and the Curie temperatures obtained are 349 K (for dense morphology) and 355 K (for columnar morphology)—the highest reported for LSMO films on Si so far. X-ray diffraction studies on phase evolution with variation in laser energy density and substrate temperature reveals the emergence of texture. Quantitative limits for all the key PLD process parameters are demonstrated in order enable morphological and structural engineering of LSMO films deposited directly on Si. These results are expected to boost the realization of top-down and bottom-up LSMO device architectures on the Si platform for a variety of applications.

  3. Electrical transport in crystalline phase change materials

    International Nuclear Information System (INIS)

    Woda, Michael

    2012-01-01

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge 2 Sb 2 Te 5 . The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  4. Electrical transport in crystalline phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Woda, Michael

    2012-01-06

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge{sub 2}Sb{sub 2}Te{sub 5}. The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  5. Polyether ether ketone film. Polyether ether ketone film

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, S. (Sumitomo Chemical Co. Ltd., Tokyo (Japan))

    1990-07-05

    The characteristics and the film making process of polyether ether ketone (PEEK) resin, and the characteristics and the applications of PEEK film, are described. PEEK is aromatic polyketone with super thermal resistance. Though it is a crystalline polymer of which the crystallinity is controlled to 48% in a highest degree, it has also amorphous property, thus it shows unique property. The characteristics of PEEK resin are found in thermal resistance, incombusti-bility, transparency, chemical resistance, light resistance and radiation resistance. As for the film making process, casting method by T-die is generally adopted. The general properties of PEEK film are excellent in high thermal resistance, good electrical properties, chemical resistance, hydrolysis resistance, radiation resistance and imcombusti-bility. In the application of PEEK film, new development is expected in following fields; a high performance composite, flexible print substrate with high thermal resistance, insulating tape with thermal resistance, and a general film in the nuclear energy industry. 5 figs., 5 tabs.

  6. Electroactive β-crystalline phase inclusion and photoluminescence response of a heat-controlled spin-coated PVDF/TiO2 free-standing nanocomposite film for a nanogenerator and an active nanosensor

    Science.gov (United States)

    Mehebub Alam, Md; Sultana, Ayesha; Sarkar, Debabrata; Mandal, Dipankar

    2017-09-01

    The electroactive β-phase is most desirable due to its highest piezo-, pyro- and ferroelectric properties in poly(vinylidene fluoride) (PVDF). Induction of the β-phase is successfully accomplished in titanium dioxide (TiO2) nanoparticles (NPs) doped spin-coated PVDF nanocomposite (PNC) films. The optimized yields of β-phase and homogeneous ultra-smooth free-standing PNC film is utilized in a mechanical-energy harvesting application by fabricating a nanogenerator (NG) where the typical electrical poling step is not undertaken. Under a repeated human finger touch and release process, it delivers an open-circuit voltage of 5 V. Moreover, the physical sensing capabilities of the NG are examined through harvesting mechanical energy from mouse clicking of a laptop and wrist pulse detection, which indicates that it can also be used as a nanosensor. The blue photoluminescence centred at 444 nm, which was also observed in PNC films, makes us anticipate a new type of photonic application where the design feasibility of hybrid sensors, i.e. electromechanical and photonic combination, is also possible.

  7. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  8. Neutron transmission through crystalline Fe

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Kilany, M.; El-Mesiry, M.S.

    2004-01-01

    The neutron transmission through crystalline Fe has been calculated for neutron energies in the range 10 4 < E<10 eV using an additive formula. The formula permits calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-section as a function of temperature and crystalline form. The obtained agreement between the calculated values and available experimental ones justifies the applicability of the used formula. A feasibility study on using poly-crystalline Fe as a cold neutron filter and a large Fe single crystal as a thermal one is given

  9. Electrochemical synthesis of self-organized TiO2 crystalline nanotubes without annealing

    Science.gov (United States)

    Giorgi, Leonardo; Dikonimos, Theodoros; Giorgi, Rossella; Buonocore, Francesco; Faggio, Giuliana; Messina, Giacomo; Lisi, Nicola

    2018-03-01

    This work demonstrates that upon anodic polarization in an aqueous fluoride-containing electrolyte, TiO2 nanotube array films can be formed with a well-defined crystalline phase, rather than an amorphous one. The crystalline phase was obtained avoiding any high temperature annealing. We studied the formation of nanotubes in an HF/H2O medium and the development of crystalline grains on the nanotube wall, and we found a facile way to achieve crystalline TiO2 nanotube arrays through a one-step anodization. The crystallinity of the film was influenced by the synthesis parameters, and the optimization of the electrolyte composition and anodization conditions (applied voltage and time) were carried out. For comparison purposes, crystalline anatase TiO2 nanotubes were also prepared by thermal treatment of amorphous nanotubes grown in an organic bath (ethylene glycol/NH4F/H2O). The morphology and the crystallinity of the nanotubes were studied by field emission gun-scanning electron microscopy (FEG-SEM) and Raman spectroscopy, whereas the electrochemical and semiconducting properties were analyzed by means of linear sweep voltammetry, impedance spectroscopy, and Mott-Schottky plots. X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) allowed us to determine the surface composition and the electronic structure of the samples and to correlate them with the electrochemical data. The optimal conditions to achieve a crystalline phase with high donor concentration are defined.

  10. The make up of crystalline bedrock - crystalline body and blocks

    International Nuclear Information System (INIS)

    Huber, M.; Huber, A.

    1986-01-01

    Statements of a geological nature can be made on the basis of investigations of the bedrock exposed in southern Black Forest and these can, in the form of prognoses, be applied to the crystalline Basement of northern Switzerland. Such statements relate to the average proportions of the main lithological groups at the bedrock surface and the surface area of the granite body. Some of the prognoses can be compared and checked with the results from the deep drilling programme in northern Switzerland. Further, analogical interferences from the situation in the southern Black Forest allow predictions to be made on the anticipated block structure of the crystalline Basement. (author)

  11. neutron transmission through crystalline materials

    International Nuclear Information System (INIS)

    El Mesiry, M.S.

    2011-01-01

    The aim of the present work is to study the neutron transmission through crystalline materials. Therefore a study of pyrolytic graphite (PG) as a highly efficient selective thermal neutron filter and Iron single crystal as a whole one, as well as the applicability of using their polycrystalline powders as a selective cold neutron filters is given. Moreover, the use of PG and iron single crystal as an efficient neutron monochromator is also investigated. An additive formula is given which allows calculating the contribution of the total neutron cross-section including the Bragg scattering from different )(hkl planes to the neutron transmission through crystalline iron and graphite. The formula takes into account their crystalline form. A computer CFe program was developed in order to provide the required calculations for both poly- and single-crystalline iron. The validity of the CFe program was approved from the comparison of the calculated iron cross-section data with the available experimental ones. The CFe program was also adapted to calculate the reflectivity from iron single crystal when it used as a neutron monochromator The computer package GRAPHITE, developed in Neutron Physics laboratory, Nuclear Research Center, has been used in order to provide the required calculations for crystalline graphite in the neutron energy range from 0.1 meV to 10 eV. A Mono-PG code was added to the computer package GRAPHITE in order to calculate the reflectivity from PG crystal when it used as a neutron monochromator.

  12. Diverse topics in crystalline beams

    International Nuclear Information System (INIS)

    Wei, Jie; Draeseke, A.; Sessler, A.M.; Li, Xiao-Ping

    1995-01-01

    Equations of motion are presented, appropriate to interacting charged particles of diverse charge and mass, subject to the external forces produced by various kinds of magnetic fields and radio-frequency (rf) electric fields in storage rings. These equations are employed in the molecular dynamics simulations to study the properties of crystalline beams. The two necessary conditions for the formation and maintenance of crystalline beams are summarized. The transition from ID to 2D, and from 2D to 3D is explored, and the scaling behavior of the heating rates is discussed especially in the high temperature limit. The effectiveness of various cooling techniques in achieving crystalline states has been investigated. Crystalline beams made of two different species of ions via sympathetic cooling are presented, as well as circulating ''crystal balls'' bunched in all directions by magnetic focusing and rf field. By numerically reconstructing the original experimental conditions of the NAP-M ring, it is found that only at extremely low beam intensities, outside of the range of the original measurement, proton particles can form occasionally-passing disks. The proposed New ASTRID ring is shown to be suitable for the formation and maintenance of crystalline beams of all dimensions

  13. Temperature-dependent structural properties of P3HT films

    Energy Technology Data Exchange (ETDEWEB)

    Grigorian, S; Joshi, S; Pietsch, U, E-mail: grigorian@physik.uni-siegen.de [Institute of Physics, University Siegen, Walter Flex Strasse 3, D-57068, Siegen (Germany)

    2010-11-15

    Structural investigations of spin coated and drop cast poly(3-hexylthiophene) P3HT films have been performed under x-ray grazing incidence geometry. Drop cast films revealed to be highly oriented and crystalline and only slightly modify with the temperature. In contrast, spin coated films provided random orientational distribution of nanocrystallites and undergo significant morphological and structural changes during annealing. Interestingly, spin coated films of low and high molecular weight fractions behavior differently as a function of temperature. Crystalline domains of the low molecular weight fractions have been decreased, and, in contrast, we found an improvement of crystallinity of high molecular weight fraction with increase of the temperature.

  14. Temperature-dependent structural properties of P3HT films

    International Nuclear Information System (INIS)

    Grigorian, S; Joshi, S; Pietsch, U

    2010-01-01

    Structural investigations of spin coated and drop cast poly(3-hexylthiophene) P3HT films have been performed under x-ray grazing incidence geometry. Drop cast films revealed to be highly oriented and crystalline and only slightly modify with the temperature. In contrast, spin coated films provided random orientational distribution of nanocrystallites and undergo significant morphological and structural changes during annealing. Interestingly, spin coated films of low and high molecular weight fractions behavior differently as a function of temperature. Crystalline domains of the low molecular weight fractions have been decreased, and, in contrast, we found an improvement of crystallinity of high molecular weight fraction with increase of the temperature.

  15. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  16. In Situ Studies of the Temperature-Dependent Surface Structure and Chemistry of Single-Crystalline (001)-Oriented La 0.8 Sr 0.2 CoO 3−δ Perovskite Thin Films

    KAUST Repository

    Feng, Zhenxing; Crumlin, Ethan J.; Hong, Wesley T.; Lee, Dongkyu; Mutoro, Eva; Biegalski, Michael D.; Zhou, Hua; Bluhm, Hendrik; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Perovskites are used to promote the kinetics of oxygen electrocatalysis in solid oxide fuel cells and oxygen permeation membranes. Little is known about the surface structure and chemistry of perovskites at high temperatures and partial oxygen pressures. Combining in situ X-ray reflectivity (XRR) and in situ ambient pressure X-ray photoelectron spectroscopy (APXPS), we report, for the first time, the evolution of the surface structure and chemistry of (001)-oriented perovskite La0.8Sr0.2CoO 3-δ (LSC113) and (La0.5Sr 0.5)2CoO4+δ (LSC214)-decorated LSC113 (LSC113/214) thin films as a function of temperature. Heating the (001)-oriented LSC113 surface leads to the formation of surface LSC214-like particles, which is further confirmed by ex situ Auger electron spectroscopy (AES). In contrast, the LSC113/214 surface, with activities much higher than that of LSC 113, is stable upon heating. Combined in situ XRR and APXPS measurements support that Sr enrichment may occur at the LSC113 and LSC214 interface, which can be responsible for its markedly enhanced activities. © 2013 American Chemical Society.

  17. In Situ Studies of the Temperature-Dependent Surface Structure and Chemistry of Single-Crystalline (001)-Oriented La 0.8 Sr 0.2 CoO 3−δ Perovskite Thin Films

    KAUST Repository

    Feng, Zhenxing

    2013-05-02

    Perovskites are used to promote the kinetics of oxygen electrocatalysis in solid oxide fuel cells and oxygen permeation membranes. Little is known about the surface structure and chemistry of perovskites at high temperatures and partial oxygen pressures. Combining in situ X-ray reflectivity (XRR) and in situ ambient pressure X-ray photoelectron spectroscopy (APXPS), we report, for the first time, the evolution of the surface structure and chemistry of (001)-oriented perovskite La0.8Sr0.2CoO 3-δ (LSC113) and (La0.5Sr 0.5)2CoO4+δ (LSC214)-decorated LSC113 (LSC113/214) thin films as a function of temperature. Heating the (001)-oriented LSC113 surface leads to the formation of surface LSC214-like particles, which is further confirmed by ex situ Auger electron spectroscopy (AES). In contrast, the LSC113/214 surface, with activities much higher than that of LSC 113, is stable upon heating. Combined in situ XRR and APXPS measurements support that Sr enrichment may occur at the LSC113 and LSC214 interface, which can be responsible for its markedly enhanced activities. © 2013 American Chemical Society.

  18. Planar-integrated single-crystalline perovskite photodetectors

    KAUST Repository

    Saidaminov, Makhsud I.

    2015-11-09

    Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors.

  19. Glycation precedes lens crystallin aggregation

    International Nuclear Information System (INIS)

    Swamy, M.S.; Perry, R.E.; Abraham, E.C.

    1987-01-01

    Non-enzymatic glycosylation (glycation) seems to have the potential to alter the structure of crystallins and make them susceptible to thiol oxidation leading to disulfide-linked high molecular weight (HMW) aggregate formation. They used streptozotocin diabetic rats during precataract and cataract stages and long-term cell-free glycation of bovine lens crystallins to study the relationship between glycation and lens crystallin aggregation. HMW aggregates and other protein components of the water-soluble (WS) and urea-soluble (US) fractions were separated by molecular sieve high performance liquid chromatography. Glycation was estimated by both [ 3 H]NaBH 4 reduction and phenylboronate agarose affinity chromatography. Levels of total glycated protein (GP) in the US fractions were about 2-fold higher than in the WS fractions and there was a linear increase in GP in both WS and US fractions. This increase was parallelled by a corresponding increase in HMW aggregates. Total GP extracted by the affinity method from the US fraction showed a predominance of HMW aggregates and vice versa. Cell-free glycation studies with bovine crystallins confirmed the results of the animals studies. Increasing glycation caused a corresponding increase in protein insolubilization and the insoluble fraction thus formed also contained more glycated protein. It appears that lens protein glycation, HMW aggregate formation, and protein insolubilization are interrelated

  20. Generic Crystalline Disposal Reference Case

    Energy Technology Data Exchange (ETDEWEB)

    Painter, Scott Leroy [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, Shaoping [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Harp, Dylan Robert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Perry, Frank Vinton [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Wang, Yifeng [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-02-20

    A generic reference case for disposal of spent nuclear fuel and high-level radioactive waste in crystalline rock is outlined. The generic cases are intended to support development of disposal system modeling capability by establishing relevant baseline conditions and parameters. Establishment of a generic reference case requires that the emplacement concept, waste inventory, waste form, waste package, backfill/buffer properties, EBS failure scenarios, host rock properties, and biosphere be specified. The focus in this report is on those elements that are unique to crystalline disposal, especially the geosphere representation. Three emplacement concepts are suggested for further analyses: a waste packages containing 4 PWR assemblies emplaced in boreholes in the floors of tunnels (KBS-3 concept), a 12-assembly waste package emplaced in tunnels, and a 32-assembly dual purpose canister emplaced in tunnels. In addition, three failure scenarios were suggested for future use: a nominal scenario involving corrosion of the waste package in the tunnel emplacement concepts, a manufacturing defect scenario applicable to the KBS-3 concept, and a disruptive glaciation scenario applicable to both emplacement concepts. The computational approaches required to analyze EBS failure and transport processes in a crystalline rock repository are similar to those of argillite/shale, with the most significant difference being that the EBS in a crystalline rock repository will likely experience highly heterogeneous flow rates, which should be represented in the model. The computational approaches required to analyze radionuclide transport in the natural system are very different because of the highly channelized nature of fracture flow. Computational workflows tailored to crystalline rock based on discrete transport pathways extracted from discrete fracture network models are recommended.

  1. Patterning crystalline indium tin oxide by high repetition rate femtosecond laser-induced crystallization

    International Nuclear Information System (INIS)

    Cheng, Chung-Wei; Lin, Cen-Ying; Shen, Wei-Chih; Lee, Yi-Ju; Chen, Jenq-Shyong

    2010-01-01

    A method is proposed for patterning crystalline indium tin oxide (c-ITO) patterns on amorphous ITO (a-ITO) thin films by femtosecond laser irradiation at 80 MHz repetition rate followed by chemical etching. In the proposed approach, the a-ITO film is transformed into a c-ITO film over a predetermined area via the heat accumulation energy supplied by the high repetition rate laser beam, and the unirradiated a-ITO film is then removed using an acidic etchant solution. The fabricated c-ITO patterns are observed using scanning electron microscopy and cross-sectional transmission electron microscopy. The crystalline, optical, electrical properties were measured by X-ray diffraction, spectrophotometer, and four point probe station, respectively. The experimental results show that a high repetition rate reduces thermal shock and yields a corresponding improvement in the surface properties of the c-ITO patterns.

  2. Amorphous-crystalline transition in thermoelectric NbO2

    International Nuclear Information System (INIS)

    Music, Denis; Chen, Yen-Ting; Bliem, Pascal; Geyer, Richard W

    2015-01-01

    Density functional theory was employed to design enhanced amorphous NbO 2 thermoelectrics. The covalent-ionic nature of Nb–O bonding is identical in amorphous NbO 2 and its crystalline counterpart. However, the Anderson localisation occurs in amorphous NbO 2 , which may affect the transport properties. We calculate a multifold increase in the absolute Seebeck coefficient for the amorphous state. These predictions were critically appraised by measuring the Seebeck coefficient of sputtered amorphous and crystalline NbO 2 thin films with the identical short-range order. The first-order phase transition occurs at approximately 550 °C, but amorphous NbO 2 possesses enhanced transport properties at all temperatures. Amorphous NbO 2 , reaching  −173 μV K −1 , exhibits up to a 29% larger absolute Seebeck coefficient value, thereby validating the predictions. (paper)

  3. J-like liquid-crystalline and crystalline states of polyaniline revealed by thin, highly crystalline, and strongly oriented films

    Czech Academy of Sciences Publication Activity Database

    Gospodinova, Natalia; Tomšík, Elena; Omelchenko, Olga

    2014-01-01

    Roč. 118, č. 29 (2014), s. 8901-8904 ISSN 1520-6106 R&D Projects: GA ČR(CZ) GA13-00270S Institutional support: RVO:61389013 Keywords : J-aggregates * organic semiconductors * polyaniline Subject RIV: CD - Macromolecular Chemistry Impact factor: 3.302, year: 2014

  4. Cholesterol monohydrate nucleation in ultrathin films on water

    DEFF Research Database (Denmark)

    Rapaport, H.; Kuzmenko, I.; Lafont, S.

    2001-01-01

    The growth of a cholesterol crystalline phase, three molecular layers thick at the air-water interface, was monitored by grazing incidence x-ray diffraction and x-ray reflectivity. Upon compression, a cholesterol film transforms from a monolayer of trigonal symmetry and low crystallinity to a tri......The growth of a cholesterol crystalline phase, three molecular layers thick at the air-water interface, was monitored by grazing incidence x-ray diffraction and x-ray reflectivity. Upon compression, a cholesterol film transforms from a monolayer of trigonal symmetry and low crystallinity...... in pathological lipid deposits....

  5. Fabrication of fullerene nano-strucutres in mixed films and devices utilizing fullerene nano-structures

    KAUST Repository

    Zhong, Yufei; Amassian, Aram; Tajima, Keisuke

    2017-01-01

    Embodiments provide methods for controlling crystallization of fullerene compounds in mixed films comprising one or more polymers. Methods can include depositing fullerene mixed films comprising one or more polymers on crystalline fullerene

  6. Amorphous Terfenol-D films using nanosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

    2009-01-01

    Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

  7. Ferrofluids in liquid crystalline systems

    International Nuclear Information System (INIS)

    Figueiredo Neto, A.M.; Liebert, L.

    1989-08-01

    It is a well-known fact that intermediate or mesomorphic phase may exist between the crystalline and the isotropic liquid phases. The symmetry properties of these mesophases are intermediate between those of a crystal and a liquid. In this paper, some aspects of the use of ferrofluids in thermotropic and lyotropic systems are studied both the experimental difficulties as well as the fundamental phypical phenomena involved. (A.C.A.S.) [pt

  8. EELS from organic crystalline materials

    International Nuclear Information System (INIS)

    Brydson, R; Seabourne, C R; Hondow, N; Eddleston, M D; Jones, W

    2014-01-01

    We report the use of the electron energy loss spectroscopy (EELS) for providing light element chemical composition information from organic, crystalline pharmaceutical materials including theophylline and paracetamol and discuss how this type of data can complement transmission electron microscopy (TEM) imaging and electron diffraction when investigating polymorphism. We also discuss the potential for the extraction of bonding information using electron loss near-edge structure (ELNES)

  9. Soliton structure in crystalline acetanilide

    International Nuclear Information System (INIS)

    Eilbeck, J.C.; Lomdahl, P.S.; Scott, A.C.

    1984-01-01

    The theory of self-trapping of amide I vibrational energy in crystalline acetanilide is studied in detail. A spectrum of stationary, self-trapped (soliton) solutions is determined and tested for dynamic stability. Only those solutions for which the amide I energy is concentrated near a single molecule were found to be stable. Exciton modes were found to be unstable to decay into solitons

  10. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  11. Graphene on insulating crystalline substrates

    International Nuclear Information System (INIS)

    Akcoeltekin, S; El Kharrazi, M; Koehler, B; Lorke, A; Schleberger, M

    2009-01-01

    We show that it is possible to prepare and identify ultra-thin sheets of graphene on crystalline substrates such as SrTiO 3 , TiO 2 , Al 2 O 3 and CaF 2 by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single layer, bilayer and few-layer graphene and graphite flakes as with conventional SiO 2 substrates. The optical contrast C of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of a dielectric, which yields values between C = -1.5% (G/TiO 2 ) and C = -8.8% (G/CaF 2 ). This contrast is in reasonable agreement with experimental data and is sufficient to make identification by an optical microscope possible. The graphene layers cover the crystalline substrate in a carpet-like mode and the height of single layer graphene on any of the crystalline substrates as determined by atomic force microscopy is d SLG = 0.34 nm and thus much smaller than on SiO 2 .

  12. Biocompatibility of crystalline opal nanoparticles.

    Science.gov (United States)

    Hernández-Ortiz, Marlen; Acosta-Torres, Laura S; Hernández-Padrón, Genoveva; Mendieta, Alicia I; Bernal, Rodolfo; Cruz-Vázquez, Catalina; Castaño, Victor M

    2012-10-22

    Silica nanoparticles are being developed as a host of biomedical and biotechnological applications. For this reason, there are more studies about biocompatibility of silica with amorphous and crystalline structure. Except hydrated silica (opal), despite is presents directly and indirectly in humans. Two sizes of crystalline opal nanoparticles were investigated in this work under criteria of toxicology. In particular, cytotoxic and genotoxic effects caused by opal nanoparticles (80 and 120 nm) were evaluated in cultured mouse cells via a set of bioassays, methylthiazolyldiphenyl-tetrazolium-bromide (MTT) and 5-bromo-2'-deoxyuridine (BrdU). 3T3-NIH cells were incubated for 24 and 72 h in contact with nanocrystalline opal particles, not presented significant statistically difference in the results of cytotoxicity. Genotoxicity tests of crystalline opal nanoparticles were performed by the BrdU assay on the same cultured cells for 24 h incubation. The reduction of BrdU-incorporated cells indicates that nanocrystalline opal exposure did not caused unrepairable damage DNA. There is no relationship between that particles size and MTT reduction, as well as BrdU incorporation, such that the opal particles did not induce cytotoxic effect and genotoxicity in cultured mouse cells.

  13. AlN piezoelectric films for sensing and actuation

    NARCIS (Netherlands)

    Tran, A.T.

    2014-01-01

    Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

  14. Atomically flat platinum films grown on synthetic mica

    Science.gov (United States)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2018-04-01

    Atomically flat platinum thin films were heteroepitaxially grown on synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2] by van der Waals epitaxy. Platinum films deposited on a fluorophlogopite mica substrate by inductively coupled plasma-assisted sputtering with oxygen introduction on a synthetic mica substrate resulted in the growth of twin single-crystalline epitaxial Pt(111) films.

  15. Understanding Nickel Thin Film crystallization using X-Ray ...

    African Journals Online (AJOL)

    The microstructures of these Ni films were studied using X-ray diffractometry technique. The X-ray diffraction (XRD) patterns depicted 100% and 42% relative intensity (RI) peaks identified for normal and helical deposited Ni films but none for the zigzag deposited Ni film. Higher degree of crystallinity of Ni was demonstrated ...

  16. Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Martin, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca i Cabarrocas, P.

    2004-01-01

    A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiC x :H) deposition, without breaking the vacuum. We measured effective lifetime, τ eff , through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. S eff values lower than 19 cm s -1 were achieved using a hydrogen plasma treatment and an a-SiC x :H film deposited at 300 deg. C

  17. Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

    Science.gov (United States)

    Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

    2017-09-19

    The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

  18. Laser writing of single-crystalline gold substrates for surface enhanced Raman spectroscopy

    Science.gov (United States)

    Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

    2017-07-01

    Surface enhanced Raman scattering (SERS) spectroscopy, a powerful contemporary tool for studying low-concentration analytes via surface plasmon induced enhancement of local electric field, is of utility in biochemistry, material science, threat detection, and environmental studies. We have developed a simple, fast, scalable, and relatively low-cost optical method of fabricating and characterizing large-area, reusable and broadband SERS substrates with long storage lifetime. We use tightly focused, intense infra-red laser pulses to write gratings on single-crystalline, Au (1 1 1) gold films on mica which act as SERS substrates. Our single-crystalline SERS substrates compare favourably, in terms of surface quality and roughness, to those fabricated in poly-crystalline Au films. Tests show that our SERS substrates have the potential of detecting urea and 1,10-phenantroline adulterants in milk and water, respectively, at 0.01 ppm (or lower) concentrations.

  19. Local excitation of surface plasmon polaritons by second-harmonic generation in crystalline organic nanofibers

    DEFF Research Database (Denmark)

    Skovsen, Esben; Søndergaard, Thomas; Fiutowski, Jacek

    2012-01-01

    Coherent local excitation of surface plasmon polaritons (SPPs) by second-harmonic generation (SHG) in aligned crystalline organic functionalized para-phenylene nanofibers deposited on a thin silver film is demonstrated. The excited SPPs are characterized using angle-resolved leakage radiation...

  20. A quantitative correlation between the mobility and crystallinity of photo-cross-linkable P3HT

    KAUST Repository

    Woo, Claire; Piliego, Claudia; Holcombe, Thomas W.; Toney, Michael F.; Frechet, Jean

    2012-01-01

    The performance of polymer field effect transistors (FETs) can vary by orders of magnitude by applying different processing conditions. Although it is generally believed that a higher degree of crystallinity results in a higher mobility, the correlation is not straightforward. In addition, the effect of cross-linking on polymer thin film microstructural order is relatively unknown. This study investigates the effect of thermal annealing and UV-initiated photo-cross-linking on the FET performance and microstructural order of a photo-cross-linkable P3HT derivative. Our results demonstrate that while cross-linking did not disrupt the overall crystallinity of the polymer thin film, the photo-cross-linking process likely induced doping in the semiconductor layer, leading to the absence of saturation behavior in the FET. Annealing after cross-linking slightly improved the FET performance but only minimally affected the microstructural order of the polymer film since the 3D morphology had been "locked in" during the first cross-linking step. Importantly, annealing and cross-linking simultaneously was a successful method to preserve polymer crystallinity while also achieving effective cross-linking. Using newly developed quantitative X-ray analysis techniques, our study established a quantitative correlation between FET charge mobility and thin film crystallinity. © 2012 American Chemical Society.

  1. High diffraction efficiency polarization gratings recorded by biphotonic holography in an azobenzene liquid crystalline polyester

    DEFF Research Database (Denmark)

    Sánchez, C; Alcalá, R; Hvilsted, Søren

    2001-01-01

    High diffraction efficiencies have been achieved with polarization gratings recorded in thin films of an azobenzene side-chain liquid crystalline polyester by means of biphotonic processes. Efficiency values up to 30% have been reached after an induction period of 300 s and subsequent evolution...

  2. Novel biphotonic holographic storage in a side-chain liquid crystalline polyester

    DEFF Research Database (Denmark)

    Ramanujam, P.S.; Hvilsted, S.; Andruzzi, F.

    1993-01-01

    We report novel biphotonic holographic storage of text and gratings on unoriented films of a side-chain liquid crystalline polyester capable of high density storage and complete erasure. The holograms have a typical size of 1 mm. The recording utilizes unusual photochemistry involving azo dye...

  3. Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi-shi 243-0036, Kanagawa (Japan)

    2015-12-28

    The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.

  4. The influence of polymerization rate on conductivity and crystallinity of electropolymerized polypyrrole

    DEFF Research Database (Denmark)

    Dyreklev, P.; Granström, M.; Inganäs, O.

    1996-01-01

    We report studies on electronic conductivity and crystallinity in electropolymerized polypyrrole. Different growth rates during electropolymerization strongly influence and determine structural and electronic properties. Polymer films grown using low current density show higher electronic conduct...... a different coupling route in the polymerization, induced by the lower current density. Copyright (C) 1996 Elsevier Science Ltd....

  5. A quantitative correlation between the mobility and crystallinity of photo-cross-linkable P3HT

    KAUST Repository

    Woo, Claire

    2012-04-10

    The performance of polymer field effect transistors (FETs) can vary by orders of magnitude by applying different processing conditions. Although it is generally believed that a higher degree of crystallinity results in a higher mobility, the correlation is not straightforward. In addition, the effect of cross-linking on polymer thin film microstructural order is relatively unknown. This study investigates the effect of thermal annealing and UV-initiated photo-cross-linking on the FET performance and microstructural order of a photo-cross-linkable P3HT derivative. Our results demonstrate that while cross-linking did not disrupt the overall crystallinity of the polymer thin film, the photo-cross-linking process likely induced doping in the semiconductor layer, leading to the absence of saturation behavior in the FET. Annealing after cross-linking slightly improved the FET performance but only minimally affected the microstructural order of the polymer film since the 3D morphology had been "locked in" during the first cross-linking step. Importantly, annealing and cross-linking simultaneously was a successful method to preserve polymer crystallinity while also achieving effective cross-linking. Using newly developed quantitative X-ray analysis techniques, our study established a quantitative correlation between FET charge mobility and thin film crystallinity. © 2012 American Chemical Society.

  6. Electric-field triggered controlled release of bioactive volatiles from imine-based liquid crystalline phases.

    Science.gov (United States)

    Herrmann, Andreas; Giuseppone, Nicolas; Lehn, Jean-Marie

    2009-01-01

    Application of an electric field to liquid crystalline film forming imines with negative dielectric anisotropy, such as N-(4-methoxybenzylidene)-4-butylaniline (MBBA, 1), results in the expulsion of compounds that do not participate in the formation of the liquid crystalline phase. Furthermore, amines and aromatic aldehydes undergo component exchange with the imine by generating constitutional dynamic libraries. The strength of the electric field and the duration of its application to the liquid crystalline film influence the release rate of the expelled compounds and, at the same time, modulate the equilibration of the dynamic libraries. The controlled release of volatile organic molecules with different chemical functionalities from the film was quantified by dynamic headspace analysis. In all cases, higher headspace concentrations were detected in the presence of an electric field. These results point to the possibility of using imine-based liquid crystalline films to build devices for the controlled release of a broad variety of bioactive volatiles as a direct response to an external electric signal.

  7. Enhancement of grain size and crystallinity of thin layers of pentacene grown under magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Tabata, Kenichi [Division of Materials Science, Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Yamamoto, Yohei, E-mail: yamamoto@ims.tsukuba.ac.jp [Division of Materials Science, Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Center for Integrated Research in Fundamental Science and Technology (CiRfSE), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2016-03-31

    Field-effect mobilities (μ) of pentacene films, prepared by a thermal deposition under a magnetic field (H-field), were largely enhanced, in comparison with that prepared without an H-field. Under a perpendicular H-field with respect to the substrate surface, the crystallinity of the edge-on pentacene orientation is enhanced, resulting in the 9-fold enhancement of μ. Furthermore, under parallel H-field with respect to the substrate surface, μ of the pentacene films were 23-fold greater than that prepared without the H-field. The surface morphology studies by atomic force microscopy of the ultra thin films of pentacene clarified that the grain size of the pentacene at the interface with the substrate is larger for films under parallel H-field than that prepared without an H-field. The simple and effective method for enhancing the semiconducting properties of the organic thin films gives high technological impact in its application to organic electronics. - Highlights: • Magnetic-field effect on the crystallinity of pentacene thin films • Magnetic-field effect on the morphology of pentacene thin films • Enhanced field-effect charge carrier mobility of pentacene thin films.

  8. Enhancement of grain size and crystallinity of thin layers of pentacene grown under magnetic field

    International Nuclear Information System (INIS)

    Tabata, Kenichi; Yamamoto, Yohei

    2016-01-01

    Field-effect mobilities (μ) of pentacene films, prepared by a thermal deposition under a magnetic field (H-field), were largely enhanced, in comparison with that prepared without an H-field. Under a perpendicular H-field with respect to the substrate surface, the crystallinity of the edge-on pentacene orientation is enhanced, resulting in the 9-fold enhancement of μ. Furthermore, under parallel H-field with respect to the substrate surface, μ of the pentacene films were 23-fold greater than that prepared without the H-field. The surface morphology studies by atomic force microscopy of the ultra thin films of pentacene clarified that the grain size of the pentacene at the interface with the substrate is larger for films under parallel H-field than that prepared without an H-field. The simple and effective method for enhancing the semiconducting properties of the organic thin films gives high technological impact in its application to organic electronics. - Highlights: • Magnetic-field effect on the crystallinity of pentacene thin films • Magnetic-field effect on the morphology of pentacene thin films • Enhanced field-effect charge carrier mobility of pentacene thin films

  9. Saline groundwater in crystalline bedrock

    International Nuclear Information System (INIS)

    Lampen, P.

    1992-11-01

    The State-of-art report describes research made on deep saline groundwaters and brines found in crystalline bedrock, mainly in site studies for nuclear waste disposal. The occurrence, definitions and classifications of saline groundwaters are reviewed with a special emphasis on the different theories concerning the origins of saline groundwaters. Studies of the saline groundwaters in Finland and Sweden have been reviewed more thoroughly. Also the mixing of different bodies of groundwaters, observations of the contact of saline groundwaters and permafrost, and the geochemical modelling of saline groundwaters as well as the future trends of research have been discussed. (orig.)

  10. Crystalline beams: The vertical zigzag

    International Nuclear Information System (INIS)

    Haffmans, A.F.; Maletic, D.; Ruggiero, A.G.

    1994-01-01

    This note is the continuation of our comprehensive investigation of Crystalline Beams. After having determined the equations of motion and the conditions for the formation of the simplest configuration, i.e. the string, we study the possibility of storing an intense beam of charged particles in a storage ring where they form a vertical zigzag. We define the equilibrium configuration, and examine the confinement conditions. Subsequently, we derive the transfer matrix for motion through various elements of the storage ring. Finally we investigate the stability conditions for such a beam

  11. Crystalline cerium(IV) phosphates

    International Nuclear Information System (INIS)

    Herman, R.G.; Clearfield, A.

    1976-01-01

    The ion exchange behaviour of seven crystalline cerium(IV) phosphates towards some of the alkali metal cations is described. Only two of the compounds (A and C) possess ion exchange properties in acidic solutions. Four others show some ion exchange characteristics in basic media with some of the alkali cations. Compound G does not behave as an ion exchanger in solutions of pH + , but show very little Na + uptake. Compound E undergoes ion exchange with Na + and Cs + , but not with Li+. Both Li + and Na + are sorbed by compounds A and C. The results are indicative of structures which show steric exclusion phenomena. (author)

  12. Halide based MBE of crystalline metals and oxides

    Energy Technology Data Exchange (ETDEWEB)

    Greenlee, Jordan D.; Calley, W. Laws; Henderson, Walter; Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia (United States)

    2012-02-15

    A halide based growth chemistry has been demonstrated which can deliver a range of transition metals using low to moderate effusion cell temperatures (30-700 C) even for high melting point metals. Previously, growth with transition metal species required difficult to control electron beam or impurity inducing metal organic sources. Both crystalline oxide and metal films exhibiting excellent crystal quality are grown using this halide-based growth chemistry. Films are grown using a plasma assisted Molecular Beam Epitaxy (MBE) system with metal-chloride precursors. Crystalline niobium, cobalt, iron, and nickel were grown using this chemistry but the technology can be generalized to almost any metal for which a chloride precursor is available. Additionally, the oxides LiNbO{sub 3} and LiNbO{sub 2} were grown with films exhibiting X-ray diffraction (XRD) rocking curve full-widths at half maximum of 150 and 190 arcseconds respectively. LiNbO{sub 2} films demonstrate a memristive response due to the rapid movement of lithium in the layered crystal structure. The rapid movement of lithium ions in LiNbO{sub 2} memristors is characterized using impedance spectroscopy measurements. The impedance spectroscopy measurements suggest an ionic current of.1 mA for a small drive voltage of 5 mV AC or equivalently an ionic current density of {proportional_to}87 A/cm{sup 2}. This high ionic current density coupled with low charge transfer resistance of {proportional_to}16.5 {omega} and a high relaxation frequency (6.6 MHz) makes this single crystal material appealing for battery applications in addition to memristors. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available on various substrates: work done @ EaP - Compound semiconductor ? Conclusions ? CSIR 2011 www.csir.co.za Acknowledgements ? Dr. Tumaini Mkwizu, PhD work on ECALD ? Ms. Nikiwe Kunjuzwa, PhD student- ECALD and batteries ? Prof... Reservoirs Potentiostat Reference Electrode Substrate (Working Electrode) Gasket Counter Electrode Electrodeposition flow-cell Waste/ Recycling Pump Pump Pump Pump Pump Potentiostat Peristaltic Pumps Flow-cell Instrumental set-up ? Pumping...

  14. Microwave annealing for preparation of crystalline hydroxyapatite thin films

    CSIR Research Space (South Africa)

    Adams, D

    2006-11-01

    Full Text Available Hydroxyapatite (HA) is widely preferred as the bio- material coating of choice in both dental and ortho- paedic implants due to its favourable osteo-conductive and bioactive properties [1]. Sol–gel synthesis of HA offers a viable alternative to the high... viable option because it is performed in air. Microwave heating differs fundamentally from conventional heating in that heat energy is generated from within the material instead of originating from D. Adams (&) Department of Physics, University...

  15. Thick Nano-Crystalline Diamond films for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Dawedeit, Christoph [Technical Univ. of Munich (Germany)

    2010-06-30

    This Diplomarbeit deals with the characterization of 9 differently grown diamond samples. Several techniques were used to determine the quality of these specimens for inertial confinement fusion targets. The quality of chemical vapor deposition diamond is usually considered in terms of the proportion of sp3-bonded carbon to sp2-bonded carbon in the sample. For fusion targets smoothness, Hydrogen content and density of the diamonds are further important characteristics. These characteristics are analyzed in this thesis. The research for thesis was done at Lawrence Livermore National Laboratory in collaboration with the Fraunhofer Institut für angewandte Festkörperphysik Freiburg, Germany. Additionally the Lehrstuhl fuer Nukleartechnik at Technical University of Germany supported the work.

  16. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

  17. Characterization of sprayed CuInS2 films by XRD and Raman spectroscopy measurements

    International Nuclear Information System (INIS)

    Lee, Dong-Yeup; Kim, JunHo

    2010-01-01

    We studied CuInS 2 (CIS) film growth using two deposition methods, which were high electrostatic field assisted ultrasonic spray (HEFAUS) deposition and sulfurization of Cu-In metallic film. The sprayed-films were grown with chalcopyrite ordering and Cu-Au ordering mixed. In order to obtain higher quality CIS films, post-sulfurization was carried out for sprayed-films. The post-sulfurization induced improvement of crystallinity and enhancement of chalcopyrite ordering. However, it was observed that Cu-Au ordering still coexisted in the CIS film after post-sulfurization. With the same sulfurization condition, sulfurization was done to transform Cu-In metallic film into CIS film. The sulfurized metallic film was turned out to be formed as CIS film with higher crystallinity and better chalcopyrite ordering than sulfurized sprayed-films. All fabricated films were characterized by X-ray diffraction, Raman scattering, scanning electron microscope and energy dispersive X-ray analysis measurements.

  18. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  19. Anisotropy-based crystalline oxide-on-semiconductor material

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  20. On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

    International Nuclear Information System (INIS)

    Diplas, S.; Ulyashin, A.; Maknys, K.; Gunnaes, A.E.; Jorgensen, S.; Wright, D.; Watts, J.F.; Olsen, A.; Finstad, T.G.

    2007-01-01

    Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 deg. C and 230 deg. C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains

  1. Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

    Directory of Open Access Journals (Sweden)

    Mauguin O.

    2012-11-01

    Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

  2. Schottky spectra and crystalline beams

    International Nuclear Information System (INIS)

    Pestrikov, D.V.

    1996-01-01

    In this paper we revise the current dependence of the Schottky noise power of a cooled proton beam previously measured at NAP-M. More careful study of experimental data indicates a linear decrease in the inverse Schottky noise power with an increase in the beam intensity (N). The root of this function determines a threshold current which occurs at N = N th ≅1.2 x 10 8 particles. The inspection of measured Schottky spectra shows that this threshold does not correspond to some collective instability of the measured harmonic of the linear beam density. The found value of N th does not depend on the longitudinal beam temperature. For the case of NAP-M lattice, the study of the spectral properties of the Schottky noise in the crystalline string predicts the current dependence of the equilibrium momentum spread of the beam, which qualitatively agrees with that, recalculated from the NAP-M data. (orig.)

  3. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  4. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  5. Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

    Science.gov (United States)

    Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

    2017-03-01

    The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

  6. Improved Properties of Coconut Shell Regenerated Cellulose Biocomposite Films using Butyl Methacrylate

    Directory of Open Access Journals (Sweden)

    Farah Norain Hahary

    2015-11-01

    Full Text Available Butyl methacrylate acid (BMA was used to enhance the properties of coconut shell (CS and regenerated cellulose (RC biocomposite films. The effects of coconut shell content and BMA on the tensile properties, crystallinity index (CrI, thermal properties, and morphology of biocomposite films were investigated. An increase in CS content, up to 3 wt.%, increased the tensile strength and modulus of elasticity, but decreased the elongation at break. The CS-RC biocomposite films treated with BMA exhibited higher tensile strength and modulus of elasticity but lower elongation at break. The crystallinity index (CrI and thermal stability of CS-RC biocomposite films increased with increasing CS up to 3 wt.%. Treated CS biocomposite films had better thermal stability than untreated CS biocomposite films. The presence of BMA increased the crystallinity of CS regenerated cellulose biocomposite films. Enhancement of the interfacial interaction of CS-RC biocomposite films was revealed by morphological study.

  7. Morphologic and crystallographic studies on electrochemically formed chromium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Amezawa, Koji [Graduate School of Environmental Studies, Tohoku University, 6-6-01 Aramaki-Aoba, Aoba-ku, Sendai 980-8579 (Japan); Goto, Takuya; Tsujimura, Hiroyuki; Hagiwara, Rika; Tomii, Yoichi [Graduate School of Energy Science, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Uchimoto, Yoshiharu [Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Environmental Systems Science, Faculty of Engineering, Doshisya University, Kyotanabe-shi, Kyoto 610-0321 (Japan)

    2007-11-20

    Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li{sup +}/Li on chromium substrates in molten LiCl-KCl-Li{sub 3}N systems at 723 K. A crystalline Cr{sub 2}N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth. (author)

  8. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Science.gov (United States)

    Lu, Yimin; Makihara, Katsunori; Takeuchi, Daichi; Ikeda, Mitsuhisa; Ohta, Akio; Miyazaki, Seiichi

    2017-06-01

    Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH4 just after GeH4 employing Ni nanodots (NDs) as seeds for crystalline nucleation. The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. When the Ge films were grown on Ni-NDs at 250 °C, the growth of µc-Ge films with crystallinity as high as 80% was realized without an amorphous phase near the Ge film/quartz substrate interface. After the subsequent Si film deposition at 250 °C, fine grains were formed in the early stages of film growth on µc-Ge films with compositional mixing (µc-Si0.85Ge0.15:H) caused by the release of large lattice mismatch between c-Si and c-Ge. With further increase in Si:H film thickness, the formation of large grain structures accompanied by fine grains was promoted. These results suggest that crystalline Si/Ge heterojunctions can be used for efficient carrier collection in solar cell application.

  9. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  10. Film thickness determination by grazing incidence diffraction

    International Nuclear Information System (INIS)

    Battiston, G. A.; Gerbasi, R.

    1996-01-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

  11. Crystalline silicotitanate gate review analysis

    International Nuclear Information System (INIS)

    Schlahta, S.N.; Carreon, R.; Gentilucci, J.A.

    1997-11-01

    Crystalline silicotitanate (CST) is an ion-exchange method for removing radioactive cesium from tank waste to allow the separation of the waste into high- and low-level fractions. The CST, originally developed Sandia National Laboratories personnel in association with Union Oil Products Corporation, has both a high affinity and selectivity for sorbing cesium-137 from highly alkaline or acidic solutions. For several years now, the U.S. Department of Energy has funded work to investigate applying CST to large-scale removal of cesium-137 from radioactive tank wastes. In January 1997, an expert panel sponsored by the Tanks Focus Area met to review the current state of the technology and to determine whether it was ready for routine use. The review also sought to identify any technical issues that must be resolved or additional CST development that must occur before full implementation by end-users. The CST Gate Review Group concluded that sufficient work has been done to close developmental work on CST and turn the remaining site-specific tasks over to the users. This report documents the review group''s findings, issues, concerns, and recommendations as well as responses from the Tanks Focus Area expert staff to specific pretreatment and immobilization issues

  12. Crystalline mono- and multilayer self-assemblies of oligothiophenes at the air-water interface

    DEFF Research Database (Denmark)

    Isz, S.; Weissbuch, I.; Kjær, K.

    1997-01-01

    The formation of Langmuir monolayers at the air-water interface has long been believed to be limited to amphiphilic molecules containing a hydrophobic chain and a hydrophilic headgroup. Here we report the formation of crystalline mono- and multilayer self-assemblies of oligothiophenes, a class...... of aromatic nonamphiphilic molecules, self-aggregated at the air-water interface. As model systems we have examined the deposition of quaterthiophene (S-4), quinquethiophene (S-5). and sexithiophene (S-6) from chloroform solutions on the water surface. The structures of the films were determined by surface...... surface. S-5 self-ageregates at the water surface to form mixtures of monolayers and bilayers of the beta polymorph; S-6 forms primarily crystalline monolayers of both alpha and beta forms. The crystalline assemblies preserve their integrity during transfer from the water surface onto solid supports...

  13. Hydraulic testing in crystalline rock

    International Nuclear Information System (INIS)

    Almen, K.E.; Andersson, J.E.; Carlsson, L.; Hansson, K.; Larsson, N.A.

    1986-12-01

    Swedish Geolocical Company (SGAB) conducted and carried out single-hole hydraulic testing in borehole Fi 6 in the Finnsjoen area of central Sweden. The purpose was to make a comprehensive evaluation of different methods applicable in crystalline rocks and to recommend methods for use in current and scheduled investigations in a range of low hydraulic conductivity rocks. A total of eight different methods of testing were compared using the same equipment. This equipment was thoroughly tested as regards the elasticity of the packers and change in volume of the test section. The use of a hydraulically operated down-hole valve enabled all the tests to be conducted. Twelve different 3-m long sections were tested. The hydraulic conductivity calculated ranged from about 5x10 -14 m/s to 1x10 -6 m/s. The methods used were water injection under constant head and then at a constant rate-of-flow, each of which was followed by a pressure fall-off period. Water loss, pressure pulse, slug and drill stem tests were also performed. Interpretation was carried out using standard transient evaluation methods for flow in porous media. The methods used showed themselves to be best suited to specific conductivity ranges. Among the less time-consuming methods, water loss, slug and drill stem tests usually gave somewhat higher hydraulic conductivity values but still comparable to those obtained using the more time-consuming tests. These latter tests, however, provided supplementary information on hydraulic and physical properties and flow conditions, together with hydraulic conductivity values representing a larger volume of rock. (orig./HP)

  14. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  15. On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

    International Nuclear Information System (INIS)

    Barhdadi, A.

    2005-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

  16. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  17. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-01-01

    Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  18. Growth of YBCO superconducting thin films on CaF sub 2 buffered silicon

    CERN Document Server

    Bhagwat, S S; Patil, J M; Shirodkar, V S

    2000-01-01

    CaF sub 2 films were grown on silicon using the neutral cluster beam deposition technique. These films were highly crystalline and c-axis oriented. Superconducting YBCO thin films were grown on the Ca F sub 2 buffered silicon using the laser ablation technique. These films showed T sub c (onset) at 90 K and Tc(zero) at 86 K. X-ray diffraction analysis showed that the YBCO films were also oriented along the c-axis.

  19. Fabrication of fullerene nano-strucutres in mixed films and devices utilizing fullerene nano-structures

    KAUST Repository

    Zhong, Yufei

    2017-04-06

    Embodiments provide methods for controlling crystallization of fullerene compounds in mixed films comprising one or more polymers. Methods can include depositing fullerene mixed films comprising one or more polymers on crystalline fullerene substrates and annealing the deposited mixed films. Methods can further include one or more of exposing the annealed mixed film to UV light, and washing the annealed mixed film with a solvent. Fullerene compounds can include one or more of PCBM, PCBNB, and PCBA.

  20. STM, SECPM, AFM and Electrochemistry on Single Crystalline Surfaces

    Directory of Open Access Journals (Sweden)

    Ulrich Stimming

    2010-08-01

    Full Text Available Scanning probe microscopy (SPM techniques have had a great impact on research fields of surface science and nanotechnology during the last decades. They are used to investigate surfaces with scanning ranges between several 100 mm down to atomic resolution. Depending on experimental conditions, and the interaction forces between probe and sample, different SPM techniques allow mapping of different surface properties. In this work, scanning tunneling microscopy (STM in air and under electrochemical conditions (EC-STM, atomic force microscopy (AFM in air and scanning electrochemical potential microscopy (SECPM under electrochemical conditions, were used to study different single crystalline surfaces in electrochemistry. Especially SECPM offers potentially new insights into the solid-liquid interface by providing the possibility to image the potential distribution of the surface, with a resolution that is comparable to STM. In electrocatalysis, nanostructured catalysts supported on different electrode materials often show behavior different from their bulk electrodes. This was experimentally and theoretically shown for several combinations and recently on Pt on Au(111 towards fuel cell relevant reactions. For these investigations single crystals often provide accurate and well defined reference and support systems. We will show heteroepitaxially grown Ru, Ir and Rh single crystalline surface films and bulk Au single crystals with different orientations under electrochemical conditions. Image studies from all three different SPM methods will be presented and compared to electrochemical data obtained by cyclic voltammetry in acidic media. The quality of the single crystalline supports will be verified by the SPM images and the cyclic voltammograms. Furthermore, an outlook will be presented on how such supports can be used in electrocatalytic studies.

  1. ZnO Coatings with Controlled Pore Size, Crystallinity and Electrical Conductivity

    Directory of Open Access Journals (Sweden)

    Roman SCHMACK

    2016-05-01

    Full Text Available Zinc oxide is a wide bandgap semiconductor with unique optical, electrical and catalytic properties. Many of its practical applications rely on the materials pore structure, crystallinity and electrical conductivity. We report a synthesis method for ZnO films with ordered mesopore structure and tuneable crystallinity and electrical conductivity. The synthesis relies on dip-coating of solutions containing micelles of an amphiphilic block copolymer and complexes of Zn2+ ions with aliphatic ligands. A subsequent calcination at 400°C removes the template and induces crystallization of the pore walls. The pore structure is controlled by the template polymer, whereas the aliphatic ligands control the crystallinity of the pore walls. Complexes with a higher thermal stability result in ZnO films with a higher content of residual carbon, smaller ZnO crystals and therefore lower electrical conductivity. The paper discusses the ability of different types of ligands to assist in the synthesis of mesoporous ZnO and relates the structure and thermal stability of the precursor complexes to the crystallinity and electrical conductivity of the zinc oxide.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8634

  2. Nanoscale silver-assisted wet etching of crystalline silicon for anti-reflection surface textures.

    Science.gov (United States)

    Li, Rui; Wang, Shuling; Chuwongin, Santhad; Zhou, Weidong

    2013-01-01

    We report here an electro-less metal-assisted chemical etching (MacEtch) process as light management surface-texturing technique for single crystalline Si photovoltaics. Random Silver nanostructures were formed on top of the Si surface based on the thin film evaporation and annealing process. Significant reflection reduction was obtained from the fabricated Si sample, with approximately 2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for anti-reflection surface texture fabrication of large area, high efficiency, and low cost thin film solar cell.

  3. Detection of radiation deformation in crystalline polymers using the speckle photography technique

    International Nuclear Information System (INIS)

    El-Ghandoor, H.; Hashem, A.A.; Sharaf, F.

    1995-01-01

    In order to measure the resulting deformation due to gamma irradiation of polymers, a new optical technique, namely speckle-photography, was established and used. Thin films of tetrafluoroethene, with constant thickness were irradiated by different doses of gamma rays and the diffraction patterns of a laser beam passing through these films were recorded using the speckle photography technique. This technique has been applied to detect the radiation deformation in (Teflon) TFE, which is a crystalline polymer. A diffraction pattern due to the TFE thin layer is obtained and superimposed on the interference pattern displaying the speckle pattern pairs recorded on the same emulsion. (author)

  4. Structural evolution, electrical and optical properties of AZO films ...

    Indian Academy of Sciences (India)

    Administrator

    Aluminum-doped zinc oxide (AZO) target was fabricated using AZO ... All AZO films show c-axis preferred orientation and hexagonal structure. With increasing film thick- ness from 153 to 1404 nm, the crystallinity was improved and the angle of (002) peak was close to ... For observing grain boundary and size, the target was.

  5. The quest for crystalline ion beams

    CERN Document Server

    Schramm, U; Bussmann, M; Habs, D

    2002-01-01

    The phase transition of an ion beam into its crystalline state has long been expected to dramatically influence beam dynamics beyond the limitations of standard accelerator physics. Yet, although considerable improvement in beam cooling techniques has been made, strong heating mechanisms inherent to existing high-energy storage rings have prohibited the formation of the crystalline state in these machines up to now. Only recently, laser cooling of low-energy beams in the table-top rf quadrupole storage ring PAaul Laser cooLing Acceleration System (PALLAS) has lead to the experimental realization of crystalline beams. In this article, the quest for crystalline beams as well as their unique properties as experienced in PALLAS will be reviewed.

  6. Mechanical dispersion in fractured crystalline rock systems

    International Nuclear Information System (INIS)

    Lafleur, D.W.; Raven, K.G.

    1986-12-01

    This report compiles and evaluates the hydrogeologic parameters describing the flow of groundwater and transport of solutes in fractured crystalline rocks. This report describes the processes of mechanical dispersion in fractured crystalline rocks, and compiles and evaluates the dispersion parameters determined from both laboratory and field tracer experiments. The compiled data show that extrapolation of the reliable test results performed over intermediate scales (10's of m and 10's to 100's of hours) to larger spatial and temporal scales required for performance assessment of a nuclear waste repository in crystalline rock is not justified. The reliable measures of longitudinal dispersivity of fractured crystalline rock are found to range between 0.4 and 7.8 m

  7. Excimer fluorescence of liquid crystalline systems

    Science.gov (United States)

    Sakhno, Tamara V.; Khakhel, Oleg A.; Barashkov, Nikolay N.; Korotkova, Irina V.

    1996-04-01

    The method of synchronous scanning fluorescence spectroscopy shows a presence of dimers of pyrene in a polymeric matrix. The results suggest that excimer formation takes place with dimers in liquid crystalline systems.

  8. Syntheses, molecular and crystalline architectures, and ...

    Indian Academy of Sciences (India)

    Syntheses, molecular and crystalline architectures, and luminescence behaviour of terephthalate bridged heptacoordinated dinuclear lead(II) complexes containing a pentadentate N-donor Schiff base. SUBHASIS ROYa, SOMNATH CHOUBEYa, SUMITAVA KHANa, KISHALAY BHARa,. PARTHA MITRAb and BARINDRA ...

  9. Polymer and Polymer Gel of Liquid Crystalline Semiconductors

    Institute of Scientific and Technical Information of China (English)

    Teppei Shimakawa; Naoki Yoshimoto; Jun-ichi Hanna

    2004-01-01

    It prepared a polymer and polymer gel of a liquid crystalline (LC) semiconductor having a 2-phenylnaphthalene moiety and studied their charge carrier transport properties by the time-of-flight technique. It is found that polyacrylate having the mesogenic core moiety of 2-phenylnaphtalene (PNP-acrylate) exhibited a comparable mobility of 10-4cm2/Vs in smectic A phase to those in smectic A (SmA) phase of small molecular liquid crystals with the same core moiety, e.g., 6-(4'-octylphenyl)- 2-dodecyloxynaphthalene (8-PNP-O12), and an enhanced mobility up to 10-3cm2/Vs in the LC-glassy phase at room temperature, when mixed with a small amount of 8-PNP-O12. On the other hand, the polymer gel consisting of 20 wt %-hexamethylenediacrylate (HDA)-based cross-linked polymer and 8-PNP-O12 exhibited no degraded mobility when cross-linked at the mesophase. These results indicate that the polymer and polymer composite of liquid crystalline semiconductors provide us with an easy way to realize a quality organic semiconductor thin film for the immediate device applications.

  10. Microstructure, thermal properties and crystallinity of amadumbe starch nanocrystals.

    Science.gov (United States)

    Mukurumbira, Agnes; Mariano, Marcos; Dufresne, Alain; Mellem, John J; Amonsou, Eric O

    2017-09-01

    Amadumbe (Colocasia esculenta), commonly known as taro is a tropical tuber that produces starch-rich underground corms. In this study, the physicochemical properties of starch nanocrystals (SNC) prepared by acid hydrolysis of amadumbe starches were investigated. Two varieties of amadumbe corms were used for starch extraction. Amadumbe starches produced substantially high yield (25%) of SNC's. These nanocrystals appeared as aggregated and individual particles and possessed square-like platelet morphology with size: 50-100nm. FTIR revealed high peak intensities corresponding to OH stretch, CH stretch and H 2 O bending vibrations for SNCs compared to their native starch counterparts. Both the native starch and SNC exhibited the A-type crystalline pattern. However, amadumbe SNCs showed higher degree of crystallinity and slightly reduced melting temperatures than their native starches. Amadumbe SNCs presented similar thermal decomposition property as their native starches. Amadumbe starch nanocrystals may have potential application in biocomposite films due to their square-like platelet morphology. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Superconducting parameters of polycrystalline niobium films

    International Nuclear Information System (INIS)

    Kandyba, P.E.; Kolesnikov, D.P.; Tkachev, V.A.

    1978-01-01

    The niobium semi-crystalline films, having a thickness of 200-5,050 A have been studied. The films have been produced by the electron-beam evaporation in the oilless vacuum and by the ionic plasma spraying with diode and triode methods. Determined have been the coherence length, the magnetic field penetration depth and the Ginsburg-andau parameter. An attempt is made to determine the electron states density of the Fermi surface

  12. Side-chain liquid-crystalline polyesters for optical information storage

    DEFF Research Database (Denmark)

    Hvilsted, Søren; Andruzzi, F.; Ramanujam, P.S.

    1992-01-01

    We report erasable holographic recording with a resolution of at least 2500 lines/mm on unoriented films of side-chain liquid-crystalline polyesters. Recording energies of approximately 1 J/cm2 have been used. We have obtained a diffraction efficiency of approximately 30% with polarization record...... recording of holograms. The holograms can be erased by heating them to approximately 80-degrees-C for approximately 2 min and are available for rerecording....

  13. 10,000 optical write, read, and erase cycles in an azobenzene sidechain liquid-crystalline polyester

    DEFF Research Database (Denmark)

    Holme, NCR; Ramanujam, P.S.; Hvilsted, Søren

    1996-01-01

    We show far what is believed to he the first time that it is possible tu generate 10,000 rapid write, read, and erase cycles optically in an azobenzene sidechain liquid-crystalline polyester. We do this by exposing the film alternately to visible light from an argon laser at 488 nm and ultraviolet...

  14. Electrochemical synthesis of highly crystalline copper nanowires

    International Nuclear Information System (INIS)

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  15. Irradiation sterilization of semi-crystalline polymers

    International Nuclear Information System (INIS)

    Williams, J.; Dunn, T.; Stannett, V.

    1978-01-01

    A semi-crystalline polymer such as polypropylene, is sterilized by high energy irradiation, with the polymer containing a non-crystalline mobilizing additive which increases the free volume of the polymer, to prevent embrittlement of the polymer during and subsequent to the irradiation. The additive has a density of from 0.6 to 1.9 g/cm 3 and a molecular weight from 100 to 10,000 g/mole

  16. Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

    International Nuclear Information System (INIS)

    Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

    2003-01-01

    An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

  17. Engineering Graphene Films from Coal

    Science.gov (United States)

    Vijapur, Santosh H.

    Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

  18. Optical properties of SrTiO3 films

    International Nuclear Information System (INIS)

    Agasiyev, A.A.; Magerramov, E.M.; Mammadov, M.Z.; Sarmasov, S.M.

    2010-01-01

    The spectrums of optical absorption of amorphous and single crystalline films SrTiO 3 at temperatures : 105 K, 300 K, 400 K are investigated. The temperature dependences of slope absorption edge, forbidden gap and characteristic constant of Urbah rule are obtained. The forbidden gap of single crystalline film SrTiO 3 and average shift shift of absorption edge degree are defined. It is established that edge of optical absorption of SrTiO 3 film is obeyed to Urbah rule and the absorption in the investigated region is caused by the transition of electron interacting with phonon

  19. Imaging studies of crystalline arthritides

    Directory of Open Access Journals (Sweden)

    G. Garlaschi

    2012-01-01

    Full Text Available Gout, calcium pyrophosphate dihydrate (CPPD deposition disease, and calcium hydroxyapatite deposition disease (HADD are the three most common crystal-induced arthropathies. Multimodality imaging may help in their diagnosis, and is useful for a precise and comprehensive assessment and grading of the related osteoarticular damage. Plain film radiography, due to its low cost and wide availability, is the first imaging technique to be used in crystal deposition diseases, providing well-known and specific findings for CPPD deposition disease and HADD, while it may undergrade the early osteoarticular lesions in gouty patients. Ultrasonography (US is a radiation-free approach that accurately depicts crystal deposits in cartilage, peri- and intra-articular soft tissues, but it does not give a panoramic view of the affected joints. Cross-sectional imaging techniques can examine crystal deposits in the spine and axial joints. CT has the potential to distinguish monosodium urate (MSU crystals from calcium containing crystals, due to their different attenuation values. MRI may demonstrate synovitis, erosions and bone marrow edema in gouty patients and it may differentiate tophi from other soft tissue nodules due to its high contrast resolution and power of tissue characterization.

  20. Formation of resonant bonding during growth of ultrathin GeTe films

    NARCIS (Netherlands)

    Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

    2017-01-01

    A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

  1. Influence of tempering on mechanical strains in Mo2Si films

    International Nuclear Information System (INIS)

    Zscheile, H.D.

    1984-01-01

    Amorphous or crystalline MoSi 2 films on (111) silicon wafers, deposited by DC triode sputtering, showed compressive stress. Tensile stress was found in the same films formed by dual electron beam evaporation. By isochronous tempering in the temperature range of 300 to 1270 K the compressive stress of the sputtered films was converted into tensile stress

  2. Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

    1996-01-01

    Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

  3. Radiation grafting on natural films

    Science.gov (United States)

    Lacroix, M.; Khan, R.; Senna, M.; Sharmin, N.; Salmieri, S.; Safrany, A.

    2014-01-01

    Different methods of polymer grafting using gamma irradiation are reported in the present study for the preparation of newly functionalized biodegradable films, and some important properties related to their mechanical and barrier properties are described. Biodegradable films composed of zein and poly(vinyl alcohol) (PVA) were gamma-irradiated in presence of different ratios of acrylic acid (AAc) monomer for compatibilization purpose. Resulting grafted films (zein/PVA-g-AAc) had their puncture strength (PS=37-40 N mm-1) and puncture deformation (PD=6.5-9.8 mm) improved for 30% and 50% PVA in blend, with 5% AAc under 20 kGy. Methylcellulose (MC)-based films were irradiated in the presence of 2-hydroxyethyl methacrylate (HEMA) or silane, in order to determine the effect of monomer grafting on the mechanical properties of films. It was found that grafted films (MC-g-HEMA and MC-g-silane) using 35% monomer performed higher mechanical properties with PS values of 282-296 N mm-1 and PD of 5.0-5.5 mm under 10 kGy. Compatibilized polycaprolactone (PCL)/chitosan composites were developed via grafting silane in chitosan films. Resulting trilayer grafted composite film (PCL/chitosan-g-silane/PCL) presented superior tensile strength (TS=22 MPa) via possible improvement of interfacial adhesion (PCL/chitosan) when using 25% silane under 10 kGy. Finally, MC-based films containing crystalline nanocellulose (CNC) as a filling agent were prepared and irradiated in presence of trimethylolpropane trimethacrylate (TMPTMA) as a grafted plasticizer. Grafted films (MC-g-TMPTMA) presented superior mechanical properties with a TS of 47.9 MPa and a tensile modulus (TM) of 1792 MPa, possibly due to high yield formation of radicals to promote TMPTMA grafting during irradiation. The addition of CNC led to an additional improvement of the barrier properties, with a significant 25% reduction of water vapor permeability (WVP) of grafted films.

  4. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  5. Electrochemical and Thermal Studies of Prepared Conducting Chitosan Biopolymer Film

    International Nuclear Information System (INIS)

    Hlaing Hlaing Oo; Kyaw Naing; Kyaw Myo Naing; Tin Tin Aye; Nyunt Wynn

    2005-09-01

    In this paper, chitosan based conducting bipolymer films were prepared by casting and solvent evaporating technique. All prepared chitosan films were of pale yellow colour, transparent, and smooth. Sulphuric acid was chosen as the cross-linking agent. It enhanced conduction pathway in cross-linked chitosan films. Mechanical properties, solid-state, and thermal behavior of prepared chitosan fimls were studied by means of a material testing machine, powder X-ray diffractometry (XRD), thermogravimetric analysis (TG-DTG), and differential scanning calorimetry (DSC). By the XRD diffraction pattern, high molecular weight of chitosan product indicates the semi-crystalline nature, but the prepared chitosan film and doped chitosan film indicate significantly lower in crystallinity prove which of the amorphous characteristics. In addition, DSC thermogram of pure chitosan film exhibited exothermic peak around at 300 C, indicating polymer decomposition of chitosan molecules in chitosan films. Furthermore, these DSC thermograms clearly showed that while pure chitosan film display exothermal decomposition, the doped chitosan films mainly endothermic characteristics. The ionic conductivity of doped chitosan films were in the order of 10 to 10 S cm , which is in the range of semi-conductor. These results showed that cross-linked chitoson films may be used as polymer electrolyte film to fabricate solid state electrochemical cells

  6. Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Evans, R [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, S [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, M A [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Paseo Colon y Tollocan, Toluca Edo. de Mexico, 50110 (Mexico); Sanchez-Perez, C [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico); Esparza-GarcIa, A [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico)

    2007-04-15

    In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO{sub 3} phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm.

  7. Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

    International Nuclear Information System (INIS)

    Evans, R; Camacho-Lopez, S; Camacho-Lopez, M A; Sanchez-Perez, C; Esparza-GarcIa, A

    2007-01-01

    In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO 3 phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm

  8. Irreducible tensor operators and crystalline potentials

    International Nuclear Information System (INIS)

    Boutron, F.; Saint-James, D.

    1961-01-01

    It is often accepted that the effects of its neighbourhood on the quantum state of an ion A may be obtained by the model of the crystalline effective field approximation. Within this assumption Stevens has developed a method which provides equivalent operators that facilitate the calculation of the matrix elements of the crystalline field in a given multiplicity. This method has been extended here. We demonstrate that in the expansion of the crystalline field in powers of the electrons coordinates of the ion A - for electrons of the same sub-shell of A - only even terms can contribute. Equivalent operators and matrix elements, in a given multiplicity, are given for these development terms - up to order 6 - and for potential invariant by the operations of one of the thirty-two point-groups. (author) [fr

  9. Ion channeling study of epitaxially grown HoBa2Cu3Ox thin films on MgO(001)

    International Nuclear Information System (INIS)

    Watamori, Michio; Shoji, Fumiya; Hanawa, Teruo; Oura, Kenjiro; Itozaki, Hideo.

    1990-01-01

    The crystalline quality of high-T c superconducting HoBa 2 Cu 3 O x thin films formed on MgO(001) has been investigated by a high-energy ion channeling technique. Analysis was performed at 3 depth regions (surface, inside, and interface), and the degree of crystalline quality at each depth was estimated. Based on ion channeling measurements carried out with the normal and off-normal and directions, it has been found that (1) the crystalline quality at the film surface is much better than that at the interface, (2) the crystalline disorder can be seen mainly along the c-axis, and (3) the film consists of two domains, 90deg rotated from each other about the c-axis of the film. The crystalline quality of the MgO substrates has also been investigated. (author)

  10. Multi-objective optimization of process conditions in the manufacturing of banana (Musa paradisiaca L.) starch/natural rubber films.

    Science.gov (United States)

    Ramírez-Hernández, A; Aparicio-Saguilán, A; Reynoso-Meza, G; Carrillo-Ahumada, J

    2017-02-10

    Multi-objective optimization was used to evaluate the effect of adding banana (Musa paradisiaca L.) starch and natural rubber (cis-1,4-poliisopreno) at different ratios (1-13w/w) to the manufacturing process of biodegradable films, specifically the effect on the biodegradability, crystallinity and moisture of the films. A structural characterization of the films was performed by X-ray diffraction, Fourier transform infrared spectroscopy and SEM, moisture and biodegradability properties were studied. The models obtained showed that degradability vs. moisture tend to be inversely proportional and crystallinity vs. degradability tend to be directly proportional. With respect to crystallinity vs. moisture behavior, it is observed that crystallinity remains constant when moisture values remain between 27 and 41%. Beyond this value there is an exponential increase in crystallinity. These results allow for predictions on the mechanical behavior that can occur in starch/rubber films. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Titanium dioxide-based carbon monoxide gas sensors: Effects of crystallinity and chemistry on sensitivity

    Science.gov (United States)

    Seeley, Zachary Mark

    Among metal-oxide gas sensors which change electrical resistive properties upon exposure to target gasses, titanium dioxide (TiO2) has received attention for its sensitivity and stability during high temperature (>500°C) operation. However, due to the sensing mechanism sensitivity, selectivity, and stability remain as critical deficiencies to be resolved before these sensors reach commercial use. In this study, TiO2 thick films of approximately 30mum and thin films of approximately 1mum thick were fabricated to assess the influence of their material properties on gas sensing mechanism. Increased calcination temperature of TiO2 thick films led to grain growth, reduction in specific surface area, and particle-particle necking. These properties are known to degrade sensitivity; however the measured carbon monoxide (CO) gas response improved with increasing calcination temperature up to 800°C. It was concluded that the sensing improvement was due to increased crystallinity within the films. Sensing properties of TiO2 thin films of were also dependent on crystallization, however; due to the smaller volume of material, they reached optimized crystallization at lower temperatures of 650°C, compared to 800°C for thick films. Incorporation of tungsten (W) and nickel (Ni) ions into the films created donor and acceptor defect sites, respectively, within the electronic band gap of TiO2. The additional n-type defects in W-doped TiO 2 improved n-type CO response, while p-type defects in Ni-doped TiO 2 converted the gas response to p-type. Chemistry of thin films had a more significant impact on the electrical properties and gas response than did microstructure or crystallinity. Doped films could be calcined at higher temperatures and yet remain highly sensitive to CO. Thin films with p-n bi-layer structure were fabricated to determine the influence of a p-n junction on gas sensing properties. No effect of the junction was observed and the sensing response neared the average

  12. In situ annealing of hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  13. Used fuel disposition in crystalline rocks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hadgu, Teklu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Kalinina, Elena Arkadievna [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jerden, James L. [Argonne National Lab. (ANL), Argonne, IL (United States); Copple, Jacqueline M. [Argonne National Lab. (ANL), Argonne, IL (United States); Cruse, T. [Argonne National Lab. (ANL), Argonne, IL (United States); Ebert, W. [Argonne National Lab. (ANL), Argonne, IL (United States); Buck, E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Eittman, R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Tinnacher, R. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Tournassat, Christophe. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Davis, J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Viswanathan, H. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Chu, S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dittrich, T. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hyman, F. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Karra, S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Makedonska, N. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Reimus, P. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Zavarin, Mavrik [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Joseph, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-09-01

    The U.S. Department of Energy Office of Nuclear Energy, Office of Fuel Cycle Technology established the Used Fuel Disposition Campaign (UFDC) in fiscal year 2010 (FY10) to conduct the research and development (R&D) activities related to storage, transportation and disposal of used nuclear fuel and high level nuclear waste. The objective of the Crystalline Disposal R&D Work Package is to advance our understanding of long-term disposal of used fuel in crystalline rocks and to develop necessary experimental and computational capabilities to evaluate various disposal concepts in such media.

  14. Irradiation induced crystalline to amorphous transition

    International Nuclear Information System (INIS)

    Bourgoin, J.

    1980-01-01

    Irradiation of a crystalline solid with energetic heavy particles results in cascades of defects which, with increasing dose, overlap and form a continuous disordered layer. In semiconductors the physical properties of such disordered layers are found to be similar to those of amorphous layers produced by evaporation. It is shown in the case of silicon, that the transition from a disordered crystalline (X) layer to an amorphous (α) layer occurs when the Gibbs energy of the X phase and of the defects it contains becomes larger than the Gibbs energy of the α phase. (author)

  15. Electronic processes in non-crystalline materials

    CERN Document Server

    Mott, Nevill Francis

    2012-01-01

    Since the first edition of this highly successful book the field saw many great developments both in experimental and theoretical studies of electrical properties of non-crystalline solids. It became necessary to rewrite nearly the whole book, while the aims of the second edition remained the same: to set out the theoretical concepts, to test them by comparison with experiment for a wide variety of phenomena, and to apply them to non-crystalline materials. Sir Nevill Mott shared the1977 Nobel Prize for Physics, awarded for his research work in this field. The reissue of this book as part of th

  16. Intrinsic localized gap states in IGZO and its parent single crystalline TCOs

    Energy Technology Data Exchange (ETDEWEB)

    Schmeißer, D.; Haeberle, J.

    2016-03-31

    We report on the X-ray absorption data for Indium–Gallium–Zink–Oxide thin films, amorphous ZnO films, amorphous SnO{sub x} films, and single crystalline In{sub 2}O{sub 3}, Ga{sub 2}O{sub 3}, ZnO, and SnO{sub 2} data. These absorption data probe the empty conduction band states explicitly. Also they allow for an elemental assignment using resonant excitation to derive the contributions of each metal ion. We find that the lowest states appear right at the Fermi energy and result from configuration interaction induced charge transfer states which we consider as intrinsic gap states. - Highlights: • We identify contributions of localized configuration interaction induced gap states. • Auger profiles taken on metal absorption edges show metallic density of states around E{sub F}. • D-shell opening leads to a charge-transfer state involving metallic d-states.

  17. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    Science.gov (United States)

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  18. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  19. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  20. Determination of crystallinity of ceramic materials from the Ruland Method

    International Nuclear Information System (INIS)

    Kniess, C.T.; Prates, P.B.; Gomes Junior, J.C.; Lima, J.C. de; Riella, H.G.; Kuhnen, N.C.

    2011-01-01

    Some methods found in literature approach the different characteristics between crystalline and amorphous phases by X ray diffraction technique. These methods use the relation between the intensities of the crystalline peaks and background amorphous or the absolute intensity of one of these to determine the relative amount of crystalline and amorphous material. However, a crystalline substance presents shows coherent diffuse scattering and a loss in the intensity of the peaks of diffraction in function of thermal vibrations of atoms and imperfections in the crystalline structure. A correct method for the determination of the crystallinity must take in account these effects. This work has as objective to determine the crystallinity of ceramic materials obtained with the addition of mineral coal bottom ashes, using the X ray diffraction technique and the Ruland Method, that considers the diminution of the intensity of the crystalline peak because of the disorder affects. The Ruland Method shows adequate for the determination of the crystallinity of the ceramic materials. (author)

  1. Crystallization in diblock copolymer thin films at different degrees of supercooling

    DEFF Research Database (Denmark)

    Darko, C.; Botiz, I.; Reiter, G.

    2009-01-01

    The crystalline structures in thin films of polystyrene-b-poly(ethylene oxide) (PS-b-PEO) diblock copolymers were studied in dependence on the degree of supercooling. Atomic force microscopy showed that the crystalline domains (lamellae) consist of grains, which are macroscopic at low and interme...

  2. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  3. Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, S.A. [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation); Osipov, A.V., E-mail: Andrey.V.Osipov@gmail.com [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation)

    2017-05-01

    This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. In the proposed hydraulic model, the dependences of the film thickness both on the gas pressure and time have been calculated. It was shown that not only the qualitative but also quantitative correspondence between theoretical and experimental results takes place. As one would expect, due to the Einstein relation, at short growth times the drift model coincides with the diffusion one. Consequences of this drift mechanism of epitaxial film growing are discussed. - Graphical abstract: This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. - Highlights: • It is established that the greater pressure, the smaller is the reaction rate. • The reaction product prevents penetration of the reagent into a reaction zone. • For description the hydraulic model of crystal lattice channels is developed. • Theoretical results for polytropic

  4. Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

    Science.gov (United States)

    Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

    2017-11-16

    For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Metamict state radiation damage in crystalline materials

    International Nuclear Information System (INIS)

    Haaker, R.F.; Ewing, R.C.

    1979-01-01

    Metamict minerals provide an excellent basis for the evaluation of long-term radiation damage effects, particularly such changes in physical and chemical properties as microfracturing, hydrothermal alteration, and solubility. This paper summarizes pertinent literature on metamictization and proposes experiments that are critical to the elucidation of structural controls on radiation damage in crystalline phases

  6. Crystalline amino acids and nitrogen emission

    NARCIS (Netherlands)

    Verstegen, M.W.A.; Jongbloed, A.W.

    2003-01-01

    Reductions in dietary protein level and supplementation with certain crystalline amino acids is a well-established method of formulating diets to achieve a more ideal amino acid pattern and to reduce nitrogen excretion. Up to 35% reduction in nitrogen excretion may be achieved by supplementing pig

  7. Attenuation of Thermal Neutrons by Crystalline Silicon

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2002-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  8. Effect of aging on the microstructure of plasticized cornstarch films

    Directory of Open Access Journals (Sweden)

    Rossana M.S.M. Thiré

    2005-06-01

    Full Text Available Aging of cornstarch films prepared by casting was investigated. Water and glycerol-plasticized cornstarch films were stored at 50% relative humidity over a period of 330 days. Aging was followed by X-ray diffraction (XRD and atomic force microscopy (AFM. XRD spectra indicated development of B-type crystallinity even for fresh films and that the crystallinity index increased from 0.06 to 0.28 as a function of storage time. AFM images of 270-day-old films revealed that the general morphology and the overall roughness have not changed due to aging. AFM phase contrast images at higher magnification showed an increasing number of ordered domains at the surface of these films, which may be attributed to recrystallization of amylose. No morphological change was observed at least at the surface of the granular region, which is enriched in amylopectin.

  9. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO 2 , V 2 O 5 , LiMn 2 O4 , LiFePO 4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO 2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO 2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as

  10. Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

    International Nuclear Information System (INIS)

    Georgieva, V; Bogaerts, A; Saraiva, M; Depla, D; Jehanathan, N; Lebelev, O I

    2009-01-01

    Using a molecular dynamics model the crystallinity of Mg x Al y O z thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al 2 O 3 film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

  11. From Cellulosic Based Liquid Crystalline Sheared Solutions to 1D and 2D Soft Materials

    Directory of Open Access Journals (Sweden)

    Maria Helena Godinho

    2014-06-01

    Full Text Available Liquid crystalline cellulosic-based solutions described by distinctive properties are at the origin of different kinds of multifunctional materials with unique characteristics. These solutions can form chiral nematic phases at rest, with tuneable photonic behavior, and exhibit a complex behavior associated with the onset of a network of director field defects under shear. Techniques, such as Nuclear Magnetic Resonance (NMR, Rheology coupled with NMR (Rheo-NMR, rheology, optical methods, Magnetic Resonance Imaging (MRI, Wide Angle X-rays Scattering (WAXS, were extensively used to enlighten the liquid crystalline characteristics of these cellulosic solutions. Cellulosic films produced by shear casting and fibers by electrospinning, from these liquid crystalline solutions, have regained wider attention due to recognition of their innovative properties associated to their biocompatibility. Electrospun membranes composed by helical and spiral shape fibers allow the achievement of large surface areas, leading to the improvement of the performance of this kind of systems. The moisture response, light modulated, wettability and the capability of orienting protein and cellulose crystals, opened a wide range of new applications to the shear casted films. Characterization by NMR, X-rays, tensile tests, AFM, and optical methods allowed detailed characterization of those soft cellulosic materials. In this work, special attention will be given to recent developments, including, among others, a moisture driven cellulosic motor and electro-optical devices.

  12. Gamma crystallins of the human eye lens.

    Science.gov (United States)

    Vendra, Venkata Pulla Rao; Khan, Ismail; Chandani, Sushil; Muniyandi, Anbukkarasi; Balasubramanian, Dorairajan

    2016-01-01

    Protein crystallins co me in three types (α, β and γ) and are found predominantly in the eye, and particularly in the lens, where they are packed into a compact, plastic, elastic, and transparent globule of proper refractive power range that aids in focusing incoming light on to the retina. Of these, the γ-crystallins are found largely in the nuclear region of the lens at very high concentrations (>400 mg/ml). The connection between their structure and inter-molecular interactions and lens transparency is an issue of particular interest. We review the origin and phylogeny of the gamma crystallins, their special structure involving the use of Greek key supersecondary structural motif, and how they aid in offering the appropriate refractive index gradient, intermolecular short range attractive interactions (aiding in packing them into a transparent ball), the role that several of the constituent amino acid residues play in this process, the thermodynamic and kinetic stability and how even single point mutations can upset this delicate balance and lead to intermolecular aggregation, forming light-scattering particles which compromise transparency. We cite several examples of this, and illustrate this by cloning, expressing, isolating and comparing the properties of the mutant protein S39C of human γS-crystallin (associated with congenital cataract-microcornea), with those of the wild type molecule. In addition, we note that human γ-crystallins are also present in other parts of the eye (e.g., retina), where their functions are yet to be understood. There are several 'crucial' residues in and around the Greek key motifs which are essential to maintain the compact architecture of the crystallin molecules. We find that a mutation that replaces even one of these residues can lead to reduction in solubility, formation of light-scattering particles and loss of transparency in the molecular assembly. Such a molecular understanding of the process helps us construct the

  13. Stress release during cyclic loading of 20 nm palladium films

    International Nuclear Information System (INIS)

    Lukáč, František; Vlček, Marián; Vlach, Martin; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid; Bell, Anthony; Čížek, Jakub

    2015-01-01

    Highlights: • Repeated hydrogenation of 20 nm Pd films was investigated by in situ X-ray diffraction. • Hydride precipitates form coherent interfaces with matrix in nanocrystalline and epitaxial thin films. • Grain boundaries affect precipitation of the hydride phase in the nanocrystalline film. • Stress in epitaxial film is tensile due to different thermal expansion of Pd and sapphire. • After hydrogen absorption/desorption cycle the stress in both films becomes tensile. - Abstract: Gas phase loading of nanocrystalline and epitaxial 20 nm Pd films deposited on single crystalline sapphire substrates was studied in this work. The nanocrystalline film was deposited at room temperature and the epitaxial film deposited at 800 °C. The nanocrystalline film suffers from in-plane compressive stress imposed by atomic peening processes. The epitaxial film exhibits tensile stress caused by the different thermal expansion coefficients of Pd and sapphire substrate. Coherent phase transition into the hydride phase was observed both for the nanocrystalline and for the epitaxial film. For both films, the lattice parameters continuously increase during the phase transition to the hydride phase. Both films exhibit enhanced hydride formation pressure compared to bulk Pd. Misfit dislocations are formed at interface between Pd film and substrate during hydrogenation. This leads to irreversible change of stress state of the films subjected to sorption and desorption cycle with hydrogen

  14. Effect of thickness on optical properties of thermally evaporated SnS films

    International Nuclear Information System (INIS)

    Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

    2013-01-01

    The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

  15. Tuning crystalline ordering by annealing and additives to study its effect on exciton diffusion in a polyalkylthiophene copolymer.

    Science.gov (United States)

    Chowdhury, Mithun; Sajjad, Muhammad T; Savikhin, Victoria; Hergué, Noémie; Sutija, Karina B; Oosterhout, Stefan D; Toney, Michael F; Dubois, Philippe; Ruseckas, Arvydas; Samuel, Ifor D W

    2017-05-17

    The influence of various processing conditions on the singlet exciton diffusion is explored in films of a conjugated random copolymer poly-(3-hexylthiophene-co-3-dodecylthiophene) (P3HT-co-P3DDT) and correlated with the degree of crystallinity probed by grazing incidence X-ray scattering and with exciton bandwidth determined from absorption spectra. The exciton diffusion coefficient is deduced from exciton-exciton annihilation measurements and is found to increase by more than a factor of three when thin films are annealed using CS 2 solvent vapour. A doubling of exciton diffusion coefficient is observed upon melt annealing at 200 °C and the corresponding films show about 50% enhancement in the degree of crystallinity. In contrast, films fabricated from polymer solutions containing a small amount of either solvent additive or nucleating agent show a decrease in exciton diffusion coefficient possibly due to formation of traps for excitons. Our results suggest that the enhancement of exciton diffusivity occurs because of increased crystallinity of alkyl-stacking and longer conjugation of aggregated chains which reduces the exciton bandwidth.

  16. Radiation grafting on natural films

    International Nuclear Information System (INIS)

    Lacroix, M.; Khan, R.; Senna, M.; Sharmin, N.; Salmieri, S.; Safrany, A.

    2014-01-01

    Different methods of polymer grafting using gamma irradiation are reported in the present study for the preparation of newly functionalized biodegradable films, and some important properties related to their mechanical and barrier properties are described. Biodegradable films composed of zein and poly(vinyl alcohol) (PVA) were gamma-irradiated in presence of different ratios of acrylic acid (AAc) monomer for compatibilization purpose. Resulting grafted films (zein/PVA-g-AAc) had their puncture strength (PS=37–40 N mm −1 ) and puncture deformation (PD=6.5–9.8 mm) improved for 30% and 50% PVA in blend, with 5% AAc under 20 kGy. Methylcellulose (MC)-based films were irradiated in the presence of 2-hydroxyethyl methacrylate (HEMA) or silane, in order to determine the effect of monomer grafting on the mechanical properties of films. It was found that grafted films (MC-g-HEMA and MC-g-silane) using 35% monomer performed higher mechanical properties with PS values of 282–296 N mm −1 and PD of 5.0–5.5 mm under 10 kGy. Compatibilized polycaprolactone (PCL)/chitosan composites were developed via grafting silane in chitosan films. Resulting trilayer grafted composite film (PCL/chitosan-g-silane/PCL) presented superior tensile strength (TS=22 MPa) via possible improvement of interfacial adhesion (PCL/chitosan) when using 25% silane under 10 kGy. Finally, MC-based films containing crystalline nanocellulose (CNC) as a filling agent were prepared and irradiated in presence of trimethylolpropane trimethacrylate (TMPTMA) as a grafted plasticizer. Grafted films (MC-g-TMPTMA) presented superior mechanical properties with a TS of 47.9 MPa and a tensile modulus (TM) of 1792 MPa, possibly due to high yield formation of radicals to promote TMPTMA grafting during irradiation. The addition of CNC led to an additional improvement of the barrier properties, with a significant 25% reduction of water vapor permeability (WVP) of grafted films. - Highlights: • Irradiation of zein

  17. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  18. Pengaruh Kecepatan Pendinginan Terhadap Perubahan Volume Leburan Polymer Crystalline dan Non-Crystalline

    OpenAIRE

    Fahrurrozi, Mohammad; Moristanto, Bagus Senowulung dan

    2003-01-01

    AbstractThe study was directed to develop a method to predict the influence of the rate of cooling to the degree of crystallittitv (DOC) and volume change of crystalline polymers. Crystalline polymer melts exhibit volume shrinkage on cooling below melting point due to crystallization. Crystallization and volunrc shrinkage will proceed with varies rate as long as the temperature is above the glass tansition temperatrre. DOC achieved by polymer is not only determined by the inherent crystallini...

  19. Nuclear films

    International Nuclear Information System (INIS)

    Malone, Peter.

    1985-01-01

    This booklet is a resource for the study of feature films that highlight the theme of nuclear war. It provides basic credits and brief indication of the theme, treatment, quality and particular notable aspects; and a series of questions raised by the film. Seventy feature films and thirty documentaries are examined

  20. Fabrication of single-crystalline plasmonic nanostructures on transparent and flexible amorphous substrates

    Science.gov (United States)

    Mori, Tomohiro; Mori, Takeshi; Tanaka, Yasuhiro; Suzaki, Yoshifumi; Yamaguchi, Kenzo

    2017-02-01

    A new experimental technique is developed for producing a high-performance single-crystalline Ag nanostructure on transparent and flexible amorphous substrates for use in plasmonic sensors and circuit components. This technique is based on the epitaxial growth of Ag on a (001)-oriented single-crystalline NaCl substrate, which is subsequently dissolved in ultrapure water to allow the Ag film to be transferred onto a wide range of different substrates. Focused ion beam milling is then used to create an Ag nanoarray structure consisting of 200 cuboid nanoparticles with a side length of 160 nm and sharp, precise edges. This array exhibits a strong signal and a sharp peak in plasmonic properties and Raman intensity when compared with a polycrystalline Ag nanoarray.

  1. Synthesis and characterization of semi-crystalline polyarylene ether nitrile with AIEE feature

    Science.gov (United States)

    Wang, Pan; Li, Kui; Jia, Kun; Liu, Xiaobo

    2017-12-01

    An AIEgen 1, 2-di (4-hydroxyphenyl)-1, 2-diphenylethene (TPE-2OH) was introduced into the back bone of semi-crystalline poly arylene ether nitriles (PEN). The fluorescence spectra results indicated that the derived polymer displayed a typical aggregation-induced emission enhancement (AIEE) active with an emitting peak at ∼470 nm. Then the AIEE active PEN was prepared into films through casting method and realised strong fluorescence emission and excellent mechanics properties. Besides, the crystal AIEE active polymer shows sphere micro-morphology along with a strong blue emission. These findings will open a door for further research on the high performance semi-crystalline PEN at flexible display technology and optical sensors.

  2. Shape-memory effect of nanocomposites based on liquid-crystalline elastomers

    Science.gov (United States)

    Marotta, A.; Lama, G. C.; Gentile, G.; Cerruti, P.; Carfagna, C.; Ambrogi, V.

    2016-05-01

    In this work, nanocomposites based on liquid crystalline (LC) elastomers were prepared and characterized in their shape memory properties. For the synthesis of materials, p-bis(2,3-epoxypropoxy)-α-methylstilbene (DOMS) was used as mesogenic epoxy monomer, sebacic acid (SA) as curing agent and multi-walled carbon nanotubes (MWCNT) and graphene oxide (GO) as fillers. First, an effective compatibilization methodology was set up to improve the interfacial adhesion between the matrix and the carbonaceous nanofillers, thus obtaining homogeneous distribution and dispersion of the nanofillers within the polymer phase. Then, the obtained nanocomposite films were characterized in their morphological and thermal properties. In particular, the effect of the addition of the nanofillers on liquid crystalline behavior, as well as on shape-memory properties of the realized materials was investigated. It was found that both fillers were able to enhance the thermomechanical response of the LC elastomers, making them good candidates as shape memory materials.

  3. Enzymatic biofuel cell based on electrodes modified with lipid liquid-crystalline cubic phases

    Science.gov (United States)

    Nazaruk, Ewa; Smoliński, Sławomir; Swatko-Ossor, Marta; Ginalska, Grażyna; Fiedurek, Jan; Rogalski, Jerzy; Bilewicz, Renata

    Two glassy carbon electrodes modified with enzymes embedded in lyotropic liquid-crystalline cubic phase were used for the biofuel cell construction. The monoolein liquid-crystalline film allowed to avoid separators in the biofuel cell. Glucose and oxygen as fuels, and glucose oxidase and laccase as anode and cathode biocatalysts, respectively were used. The biofuel cell parameters were examined in McIlvaine buffer, pH 7 solution containing 15 mM of glucose and saturated with dioxygen. A series of mediators were tested taking into account their formal potentials, stability in the cubic phase and efficiency of mediation. Most stable was the biofuel cell based on tetrathiafulvalene (TTF) and 2,2‧-azino-bis(3-ethylbenzothiazoline-6-sulfonate) (ABTS) as anode and cathode mediators, respectively. The open-circuit voltage was equal to 450 ± 40 mV. The power densities and current densities were measured for all the systems studied.

  4. Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

    Science.gov (United States)

    Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

    2017-06-01

    The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

  5. Liquid Crystalline Perylene diimides : Architecture and Charge Carrier Mobilities

    NARCIS (Netherlands)

    Struijk, C.W.; Sieval, A.B.; Dakhorst, J.E.J.; Dijk, van M.; Kimkes, P.; Koehorst, R.B.M.; Donker, H.

    2000-01-01

    The phase behavior of three N-alkyl-substituted perylene diimide derivatives is examined by differential scanning calorimetry and polarized optical microscopy. The occurrence of multiple phase transitions indicates several crystalline and several liquid crystalline phases. X-ray diffraction

  6. Symmetry, strain, defects, and the nonlinear optical response of crystalline BaTiO3/silicon

    Science.gov (United States)

    Kormondy, Kristy; Abel, Stefan; Popoff, Youri; Sousa, Marilyne; Caimi, Daniele; Siegwart, Heinz; Marchiori, Chiara; Rossell, Marta; Demkov, Alex; Fompeyrine, Jean

    Recent progress has been made towards exploiting the linear electro-optic or Pockels effect in ferroelectric BaTiO3 (BTO) for novel integrated silicon photonics devices. In such structures, the crystalline symmetry and domain structure of BTO determine which electro-optic tensor elements are accessible under application of an external electric field. For epitaxial thin films of BTO on Si (001), the role of defects in strain relaxation can lead to very different crystalline symmetry even for films of identical thickness. Indeed, through geometric phase analysis of high-resolution scanning transmission electron microscopy images, we map changes of the in-plane and out-of-plane lattice parameters across two 80-nm-thick BTO films. A corresponding 20% difference in the effective electro-optic response was measured by analyzing induced rotation of the polarization of a laser beam (λ = 1550 nm) transmitted through lithographically defined electrodes. Understanding, controlling, and modelling the role of BTO symmetry in nonlinear optics is of fundamental importance for the development of a hybrid BTO/Si photonics platform.. Work supported by the NSF (IRES-1358111), AFOSR (FA9550-12-10494), and European Commission (FP7-ICT-2013-11-619456-SITOGA).

  7. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  8. EVA/TiO2 nanocomposite: Study of the properties thermal and crystallinity of the EVA/TiO2 nanocomposite

    International Nuclear Information System (INIS)

    Valentim, Ana C.S.; Tavares, Maria I.B.; Silva, Emerson O. da

    2011-01-01

    The effect of titanium dioxide nanoparticles on the thermal properties and crystallinity of the ethylene vinyl acetate (EVA) copolymer containing 28% vinyl acetate were investigated. The EVA/TiO 2 nanocomposite films with TiO 2 contents of 0,10-1% relative to the total mass of EVA, were prepared via solution. The prepared films were characterized using TG, and XRD methods. (author)

  9. Antibacterial photocatalytic activity of different crystalline TiO2 phases in oral multispecies biofilm.

    Science.gov (United States)

    Pantaroto, Heloisa N; Ricomini-Filho, Antonio P; Bertolini, Martinna M; Dias da Silva, José Humberto; Azevedo Neto, Nilton F; Sukotjo, Cortino; Rangel, Elidiane C; Barão, Valentim A R

    2018-07-01

    Titanium dioxide (TiO 2 ) incorporation in biomaterials is a promising technology due to its photocatalytic and antibacterial activities. However, the antibacterial potential of different TiO 2 crystalline structures on a multispecies oral biofilm remains unknown. We hypothesized that the different crystalline TiO 2 phases present different photocatalytic and antibacterial activities. Three crystalline TiO 2 films were deposited by magnetron sputtering on commercially pure titanium (cpTi), in order to obtain four groups: (1) machined cpTi (control); (2) A-TiO 2 (anatase); (3) M-TiO 2 (mixture of anatase and rutile); (4) R-TiO 2 (rutile). The morphology, crystalline phase, chemical composition, hardness, elastic modulus and surface free energy of the surfaces were evaluated. The photocatalytic potential was assessed by methylene blue degradation assay. The antibacterial activity was evaluated on relevant oral bacteria, by using a multispecies biofilm (Streptococcus sanguinis, Actinomyces naeslundii and Fusobacterium nucleatum) formed on the treated titanium surfaces (16.5h) followed by UV-A light exposure (1h) to generate reactive oxygen species production. All TiO 2 films presented around 300nm thickness and improved the hardness and elastic modulus of cpTi surfaces (p0.05 vs. control). This study brings new insights on the development of extra oral protocols for the photocatalytic activity of TiO 2 in oral biofilm-associated disease. Anatase and mixture-TiO 2 showed antibacterial activity on this oral bacterial biofilm, being promising surface coatings for dental implant components. Copyright © 2018 The Academy of Dental Materials. All rights reserved.

  10. Electromagnetic processes in strong crystalline fields

    CERN Multimedia

    2007-01-01

    We propose a number of new investigations on aspects of radiation from high energy electron and positron beams (10-300 GeV) in single crystals and amorphous targets. The common heading is radiation emission by electrons and positrons in strong electromagnetic fields, but as the setup is quite versatile, other related phenomena in radiation emission can be studied as well. The intent is to clarify the role of a number of important aspects of radiation in strong fields as e.g. observed in crystals. We propose to measure trident 'Klein-like' production in strong crystalline fields, 'crystalline undulator' radiation, 'sandwich' target phenomena, LPM suppression of pair production as well as axial and planar effects in contributions of spin to the radiation.

  11. Application of thermodynamics to silicate crystalline solutions

    Science.gov (United States)

    Saxena, S. K.

    1972-01-01

    A review of thermodynamic relations is presented, describing Guggenheim's regular solution models, the simple mixture, the zeroth approximation, and the quasi-chemical model. The possibilities of retrieving useful thermodynamic quantities from phase equilibrium studies are discussed. Such quantities include the activity-composition relations and the free energy of mixing in crystalline solutions. Theory and results of the study of partitioning of elements in coexisting minerals are briefly reviewed. A thermodynamic study of the intercrystalline and intracrystalline ion exchange relations gives useful information on the thermodynamic behavior of the crystalline solutions involved. Such information is necessary for the solution of most petrogenic problems and for geothermometry. Thermodynamic quantities for tungstates (CaWO4-SrWO4) are calculated.

  12. Determination of chloride content in crystalline silicotitanate

    International Nuclear Information System (INIS)

    Wilmarth, W.R.

    1999-01-01

    Crystalline Silicotitanate (CST) is one of three options under evaluation to replace the In-Tank Precipitation process. This Salt Disposition Alternatives team identified three options for pretreatment of High Level Waste supernate: non-elutable ion exchange, precipitation with sodium tetraphenylborate or direct disposal in grout. The ion exchange option would use crystalline silicotitanate (CST). Researchers at Texas A and M and Sandia National Laboratory developed CST. The engineered form of CST was procured from UOP LLC under the trade name IONSIVreg s ign IE-911. Review of vendor literature and discussions with UOP personnel led to speculation concerning the fate of chloride ion during the manufacture process of IE-911. Walker proposed tests to examine the chloride content of CST and removal methods. This report describes the results of tests to determine the chloride levels in as received CST and washed CST

  13. Total scattering of disordered crystalline functional materials

    International Nuclear Information System (INIS)

    Shamoto, Shin-Ichi; Kodama, Katsuaki; Iikubo, Satoshi; Taguchi, Tomitsugu

    2009-01-01

    There are disorders in some modern functional materials. As an example, the crystalline phase of an optical recording material has low thermal conductivity but high electrical conductivity, simultaneously. This contradiction is a challenge to material scientists in designing good functional materials, which should have at least two types of crystallographic sites. One site limits thermal conductivity while the other site carries electrons or holes with high mobility. This problem exists with not only optical recording materials but also thermoelectric materials. The periodic boundary condition gets lost in the disordered parts. This therefore, makes atomic pair distribution function (PDF) analysis with a wide range of real space suitable for investigating the form and size of crystalline parts as well as disordered parts in the material. Pulsed neutron powder diffraction is one of the best tools for use in this new type of emerging research, together with synchrotron X-ray powder diffraction and electron diffraction.

  14. Plasmonic Physics of 2D Crystalline Materials

    Directory of Open Access Journals (Sweden)

    Zahra Torbatian

    2018-02-01

    Full Text Available Collective modes of doped two-dimensional crystalline materials, namely graphene, MoS 2 and phosphorene, both monolayer and bilayer structures, are explored using the density functional theory simulations together with the random phase approximation. The many-body dielectric functions of the materials are calculated using an ab initio based model involving material-realistic physical properties. Having calculated the electron energy-loss, we calculate the collective modes of each material considering the in-phase and out-of-phase modes for bilayer structures. Furthermore, owing to many band structures and intreband transitions, we also find high-energy excitations in the systems. We explain that the material-specific dielectric function considering the polarizability of the crystalline material such as MoS 2 are needed to obtain realistic plasmon dispersions. For each material studied here, we find different collective modes and describe their physical origins.

  15. Crystallinity evaluation of polyhydroxybutyrate and polycaprolactone blends

    International Nuclear Information System (INIS)

    Cavalcante, Maxwell P.; Rodrigues, Elton Jorge R.; Tavares, Maria Ines B.

    2015-01-01

    Polyhydroxybutyrate, PHB, is a polymer obtained through bacterial or synthetic pathways. It has been used in the biomedical field as a matrix for drug delivery, medical implants and as scaffold material for tissue engineering. PHB has high structural organization, which makes it highly crystalline and brittle, making biodegradation difficult, reducing its employability. In order to enhance the mechanical and biological properties of PHB, blends with other polymers, biocompatible or not, are researched and produced. In this regard, blends of PHB and polycaprolactone, PCL, another biopolymer widely used in the biomedical industry, were obtained via solution casting and were characterized by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and low field nuclear magnetic resonance (LF-NMR). Results have shown a dependence between PHB's crystallinity index and PCL quantity employed to obtain the blends.(author)

  16. Magnetic anisotropies in SmCo thin films

    International Nuclear Information System (INIS)

    Chen, K.

    1993-01-01

    A systemic study of the deposition processes and magnetic properties for the Sm-Co film system has been carried out. Films of Sm-Co system with various magnetic anisotropies have been synthesized through sputter deposition in both crystalline and amorphous phases. The origins of various anisotropies have been studied. Thermalized sputter deposition process control was used to synthesize Fe enriched Sm-Co films with rhombohedral Th 2 Zn 17 type structure. The film exhibited unusually strong textures with the crystallographic c axes of the crystallites aligned in the film plane. A large anisotropy was resulted with easy axis in the film plane. A well defined and large in-the-film-plane anisotropy of exceptionally high value of 3.3 x 10 6 erg/cm 3 has been obtained in the amorphous SmCo films by applying a magnetic field in the film plane during deposition. It was found that the in-the-film-plane anisotropy depended essentially on the applied field and Sm concentration. For films not synthesized through thermallized sputtering, the easy axis of the film could reoriented. A perpendicular anisotropy was also presented in the film synthesized through thermallized sputtering deposition. A large in-plane anisotropy was obtained in films deposited above ambient temperatures. It was concluded that the surface induced short range ordering was the origin of the in-the-film-phase anisotropy observed in amorphous film deposited in the presence of a magnetic field. The formation mechanism was different from that of the short range ordering induced by field annealing. The perpendicular anisotropy was shown to be growth induced. Large in-plane anisotropy in amorphous films was resulted form partial crystallization in the film. Both the formation of growth induced structure and partial crystallization in the film prevented the formation of the pair ordering and decreased in-the-film-plane anisotropy

  17. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    International Nuclear Information System (INIS)

    Liu Xuezhang; Wei Qiuping; Yu Zhiming; Yang Taiming; Zhai Hao

    2013-01-01

    Highlights: ► Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. ► The nucleation density was increased to 10 11 cm −2 . ► Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. ► Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp 3 -bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10 11 cm −2 , and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  18. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuezhang [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Wei Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yu Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yang Taiming; Zhai Hao [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. Black-Right-Pointing-Pointer The nucleation density was increased to 10{sup 11} cm{sup -2}. Black-Right-Pointing-Pointer Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. Black-Right-Pointing-Pointer Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp{sup 3}-bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10{sup 11} cm{sup -2}, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  19. Aligned silane-treated MWCNT/liquid crystal polymer films

    International Nuclear Information System (INIS)

    Cervini, Raoul; Simon, George P; Ginic-Markovic, Milena; Matisons, Janis G; Huynh, Chi; Hawkins, Stephen

    2008-01-01

    We report on a method to preferentially align multiwall carbon nanotubes (MWCNTs) in a liquid crystalline matrix to form stable composite thin films. The liquid crystalline monomeric chains can be crosslinked to form acrylate bridges, thereby retaining the nanotube alignment. Further post-treatment by ozone etching of the composite films leads to an increase in bulk conductivity, leading to higher emission currents when examined under conducting scanning probe microscopy. The described methodology may facilitate device manufacture where electron emission from nanosized tips is important in the creation of new display devices

  20. University Crystalline Silicon Photovoltaics Research and Development

    Energy Technology Data Exchange (ETDEWEB)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

    2008-08-18

    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  1. Reactions and Interactions in Liquid Crystalline Media

    Science.gov (United States)

    1991-10-30

    nematic lyophases of potassium laurate, myristyl tri methylammonium bromide or sodium decylsulfate with 1-decanol and 23 water. A strong retardation of the...crystalline polyacrylate crosslinked elastomers were synthesized. 198c 0 0 96 0 0 0O-(CH12 ) 2 -0O(k 97 Crosslinking, up to 10% of structural units produced...in their isotropic state and they work as the transporting phase for the azo-crown ether molecules. The permeation of K+ from a potassium p

  2. The phase diagram of crystalline surfaces

    International Nuclear Information System (INIS)

    Anagnostopoulos, K.N.; Bowick, M.J.; Catterall, S.M.

    1995-01-01

    We report the status of a high-statistics Monte Carlo simulation of non-self-avoiding crystalline surfaces with extrinsic curvature on lattices of size up to 128 2 nodes. We impose free boundary conditions. The free energy is a gaussian spring tethering potential together with a normal-normal bending energy. Particular emphasis is given to the behavior of the model in the cold phase where we measure the decay of the normal-normal correlation function

  3. Colloid properties in groundwaters from crystalline formations

    International Nuclear Information System (INIS)

    Degueldre, C.A.

    1994-09-01

    Colloids are present in all groundwaters. The role they may play in the migration of safety-relevant radionuclides in the geosphere therefore must be studied. Colloid sampling and characterisation campaigns have been carried out in Switzerland. On the bases of the results from studies in the Grimsel area, Northern Switzerland and the Black Forest, as well as those obtained by other groups concerned with crystalline waters, a consistent picture is emerging. The groundwater colloids in crystalline formations are predominantly comprised of phyllosilicates and silica originating from the aquifer rock. Under constant hydrogeochemical conditions, the colloid concentration is not expected to exceed 100 ng.ml -1 when the calcium concentration is greater than 10 -4 . However, under transient chemical or physical conditions, such as geothermal or tectonic activity, colloid generation may be enhanced and the colloid concentration may reach 10 μg.ml -1 or more, if both the calcium and sodium concentrations are low. In the Nagra Crystalline Reference Water the expected colloid concentration is -1 . This can be compared, for example, to a colloid concentration of about 10 ng.ml -1 found in Zurzach water. The small colloid concentration in the reference water is a consequence of an attachment factor for clay colloids (monmorillonite) close to 1. A model indicates that at pH 8, the nuclide partition coefficients between water and colloid (K p ) must be smaller than 10 7 ml.g -1 if sorption takes place by surface complexation on colloids, = AIOH active groups forming the dominant sorption sites. This pragmatic model is based on the competition between the formation of nuclide hydroxo complexes in solution and their sorption on colloids. Experimental nuclide sorption data on colloids are compared with those obtained by applying this model. For a low colloid concentration, a sorption capacity of the order of 10 -9 M and reversible surface complexation, their presence in the

  4. Controlled synthesis of single-crystalline graphene

    Directory of Open Access Journals (Sweden)

    Wang Xueshen

    2014-02-01

    Full Text Available This paper reports the controlled synthesis of single-crystalline graphene on the back side of copper foil using CH4 as the precursor. The influence of growth time and the pressure ratio of CH4/H2 on the structure of graphene are examined. An optimized polymer-assisted method is used to transfer the synthesized graphene onto a SiO2/Si substrate. Scanning electron microscopy and Raman spectroscopy are used to characterize the graphene.

  5. Atomic layer deposition of a MoS₂ film.

    Science.gov (United States)

    Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

    2014-09-21

    A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

  6. Crystallinity in starch plastics: consequences for material properties

    NARCIS (Netherlands)

    Soest, van J.J.G.; Vliegenthart, J.F.G.

    1997-01-01

    The processing of starches with biodegradable additives has made biodegradable plastics suitable for a number of applications. Starch plastics are partially crystalline as a result of residual crystallinity and the recrystallization of amylose and amylopectin. Such crystallinity is a key determinant

  7. Crystalline lens power and refractive error.

    Science.gov (United States)

    Iribarren, Rafael; Morgan, Ian G; Nangia, Vinay; Jonas, Jost B

    2012-02-01

    To study the relationships between the refractive power of the crystalline lens, overall refractive error of the eye, and degree of nuclear cataract. All phakic participants of the population-based Central India Eye and Medical Study with an age of 50+ years were included. Calculation of the refractive lens power was based on distance noncycloplegic refractive error, corneal refractive power, anterior chamber depth, lens thickness, and axial length according to Bennett's formula. The study included 1885 subjects. Mean refractive lens power was 25.5 ± 3.0 D (range, 13.9-36.6). After adjustment for age and sex, the standardized correlation coefficients (β) of the association with the ocular refractive error were highest for crystalline lens power (β = -0.41; P lens opacity grade (β = -0.42; P lens power (β = -0.95), lower corneal refractive power (β = -0.76), higher lens thickness (β = 0.30), deeper anterior chamber (β = 0.28), and less marked nuclear lens opacity (β = -0.05). Lens thickness was significantly lower in eyes with greater nuclear opacity. Variations in refractive error in adults aged 50+ years were mostly influenced by variations in axial length and in crystalline lens refractive power, followed by variations in corneal refractive power, and, to a minor degree, by variations in lens thickness and anterior chamber depth.

  8. Crystalline to amorphous transformation in silicon

    International Nuclear Information System (INIS)

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

  9. The strength of crystalline color superconductors

    International Nuclear Information System (INIS)

    Mannarelli, Massimo; Rajagopal, Krishna; Sharma, Rishi

    2007-01-01

    We present a study of the shear modulus of the crystalline color superconducting phase of quark matter, showing that this phase of dense, but not asymptotically dense, quark matter responds to shear stress as a very rigid solid. This phase is characterized by a gap parameter Δ that is periodically modulated in space and therefore spontaneously breaks translational invariance. We derive the effective action for the phonon fields that describe space- and time-dependent fluctuations of the crystal structure formed by Δ, and obtain the shear modulus from the coefficients of the spatial derivative terms. Within a Ginzburg-Landau approximation, we find shear moduli which are 20 to 1000 times larger than those of neutron star crusts. This phase of matter is thus more rigid than any known material in the universe, but at the same time the crystalline color superconducting phase is also superfluid. These properties raise the possibility that the presence of this phase within neutron stars may have distinct implications for their phenomenology. For example (some) pulsar glitches may originate in crystalline superconducting neutron star cores

  10. Crystalline beams: Theory, experiments, and proposals

    International Nuclear Information System (INIS)

    Ruggiero, A.G.

    1995-01-01

    Crystalline Beams are an ordered state of an ensemble of ions, circulating in a storage ring, with very small velocity fluctuations. They can be obtained from ordinary warm ion beams with the application of intense cooling techniques (stochastic, electron, laser). A phase transition occurs when sufficiently small velocity spreads are reached, freezing the particle-to-particle spacing in strings, Zigzags, and helices ... The properties and the feasibility of Crystalline Beams depend on the choice of the lattice of the Storage Ring. There are three issues closely related to the design of the Storage Ring; namely: the determination of Equilibrium Configurations, Confinement Conditions, and Stability Conditions. Of particular concern is the effect of the trajectory curvature and of the beam momentum spread, since they set the requirements on the amount of momentum cooling, on the focussing, and on the distribution of bending in the lattice of the storage ring. The practical demonstration of Crystalline Beams may create the basis for an advanced technology for particle accelerators, where the limitations due to Coulomb intrabeam scattering and space-charge forces would finally be brought under control, so that beams of ions, more dense than normal, can be achieved for a variety of new applications

  11. Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

    International Nuclear Information System (INIS)

    Melikhova, O; Čížek, J; Procházka, I; Kužel, R; Novotný, M; Bulír, J; Lancok, J; Anwand, W; Brauer, G; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P

    2013-01-01

    ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20–100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.

  12. Supramolecular structure of a perylene derivative in thin films deposited by physical vapor deposition

    International Nuclear Information System (INIS)

    Fernandes, Jose D.; Aoki, Pedro H.B.; Constantino, Carlos J.J.; Junior, Wagner D.M.; Teixeira, Silvio R.

    2014-01-01

    Full text: Thin films of a perylene derivative, the bis butylimido perylene (BuPTCD), were produced using thermal evaporation (PVD, physical vapor deposition). The main objective is to investigate the supramolecular structure of the BuPTCD in these PVD films, which implies to control the thickness and to determine the molecular organization, morphology at micro and nanometer scales and crystallinity. This supramolecular structure is a key factor in the optical and electrical properties of the film. The ultraviolet-visible absorption revealed an uniform growth of the PVD films. The optical and atomic force microscopy images showed a homogeneous surface of the film at micro and nanometer scales. A preferential orientation of the molecules in the PVD films was determined via infrared absorption. The X-ray diffraction showed that both powder and PVD film are in the crystalline form. (author)

  13. Physical stability and moisture sorption of aqueous chitosan-amylose starch films plasticized with polyols

    DEFF Research Database (Denmark)

    Cervera, Mirna Fernández; Karjalainen, Milja; Airaksinen, Sari

    2004-01-01

    The short-term stability and the water sorption of films prepared from binary mixtures of chitosan and native amylose maize starch (Hylon VII) were evaluated using free films. The aqueous polymer solutions of the free films contained 2% (w/w) film formers, glycerol, or erythritol as a plasticizer...... in the crystallinity of the films are evident within a 3-month period of storage, and the changes in the solid state are dependent on the plasticizer and storage conditions. When stored at ambient conditions for 3 months, the aqueous chitosan-amylose starch films plasticized with erythritol exhibited a partly...

  14. Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

    2011-01-01

    MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

  15. Crystalline TiO2 grafted with poly(2-methacryloyloxyethyl phosphorylcholine) via surface-initiated atom-transfer radical polymerization

    International Nuclear Information System (INIS)

    Zhao Yuancong; Tu Qiufen; Wang Jin; Huang Qiongjian; Huang Nan

    2010-01-01

    Crystalline TiO 2 films were prepared by unbalanced magnetron sputtering and the structure was confirmed by XRD. An organic layer of 11-hydroxyundecylphosphonic acid (HUPA) was prepared on the TiO 2 films by self-assembling, and the HUPA on TiO 2 films was confirmed by FTIR analysis. Simultaneously, hydroxyl groups were introduced in the phosphonic acid molecules to provide a functionality for further chemical modification. 2-Methacryloyloxyethyl phosphorylcholine (MPC), a biomimetic monomer, was chemically grafted on the HUPA surfaces at room temperature by surface-initiated atom-transfer radical polymerization. The surface characters of TiO 2 films modified by poly-MPC were confirmed by FTIR, XPS and SEM analysis. Platelet adhesion experiment revealed that poly-MPC modified surface was effective to inhibit platelet adhesion in vitro.

  16. Crystalline TiO 2 grafted with poly(2-methacryloyloxyethyl phosphorylcholine) via surface-initiated atom-transfer radical polymerization

    Science.gov (United States)

    Zhao, Yuancong; Tu, Qiufen; Wang, Jin; Huang, Qiongjian; Huang, Nan

    2010-12-01

    Crystalline TiO 2 films were prepared by unbalanced magnetron sputtering and the structure was confirmed by XRD. An organic layer of 11-hydroxyundecylphosphonic acid (HUPA) was prepared on the TiO 2 films by self-assembling, and the HUPA on TiO 2 films was confirmed by FTIR analysis. Simultaneously, hydroxyl groups were introduced in the phosphonic acid molecules to provide a functionality for further chemical modification. 2-Methacryloyloxyethyl phosphorylcholine (MPC), a biomimetic monomer, was chemically grafted on the HUPA surfaces at room temperature by surface-initiated atom-transfer radical polymerization. The surface characters of TiO 2 films modified by poly-MPC were confirmed by FTIR, XPS and SEM analysis. Platelet adhesion experiment revealed that poly-MPC modified surface was effective to inhibit platelet adhesion in vitro.

  17. Characterization and use of crystalline bacterial cell surface layers

    Science.gov (United States)

    Sleytr, Uwe B.; Sára, Margit; Pum, Dietmar; Schuster, Bernhard

    2001-10-01

    Crystalline bacterial cell surface layers (S-layers) are one of the most common outermost cell envelope components of prokaryotic organisms (archaea and bacteria). S-layers are monomolecular arrays composed of a single protein or glycoprotein species and represent the simplest biological membranes developed during evolution. S-layers as the most abundant of prokaryotic cellular proteins are appealing model systems for studying the structure, synthesis, genetics, assembly and function of proteinaceous supramolecular structures. The wealth of information existing on the general principle of S-layers have revealed a broad application potential. The most relevant features exploited in applied S-layer research are: (i) pores passing through S-layers show identical size and morphology and are in the range of ultrafiltration membranes; (ii) functional groups on the surface and in the pores are aligned in well-defined positions and orientations and accessible for chemical modifications and binding functional molecules in very precise fashion; (iii) isolated S-layer subunits from a variety of organisms are capable of recrystallizing as closed monolayers onto solid supports (e.g., metals, polymers, silicon wafers) at the air-water interface, on lipid films or onto the surface of liposomes; (iv) functional domains can be incorporated in S-layer proteins by genetic engineering. Thus, S-layer technologies particularly provide new approaches for biotechnology, biomimetics, molecular nanotechnology, nanopatterning of surfaces and formation of ordered arrays of metal clusters or nanoparticles as required for nanoelectronics.

  18. Universal aspects of sonolubrication in amorphous and crystalline materials

    Science.gov (United States)

    Pfahl, V.; Ma, C.; Arnold, W.; Samwer, K.

    2018-01-01

    We studied sonolubricity, a phenomenon reducing the friction between two sliding surfaces by ultrasound. Friction force measurements were performed using an atomic force microscope (AFM) when the tip-surface contact was excited to out-of-plane oscillations by a transducer attached to the rear of the sample or by oscillating the AFM cantilever by the built-in piezoelectric element in the cantilever holder. Experiments were carried out near or at the first cantilever contact-resonance. We studied friction on crystalline and amorphous Pd77.5Cu6Si16.5 ribbons, on a silicon wafer at room temperature, and on a La0.6Sr0.4MnO3 (LSMO) thin film at different temperatures. Measurements were carried out varying the cantilever amplitude, the ultrasonic frequency, and the normal static load. The effect of sonolubrication is explained by the non-linear force-distance curve between the sample and the tip due to the local interaction potential. The reduction of friction in LSMO as a function temperature is due to the direct coupling of the tip's stress-field to the electrons.

  19. Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator

    Directory of Open Access Journals (Sweden)

    Wencan Jin

    2017-10-01

    Full Text Available Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi_{2}Se_{3} has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50×10^{6}  m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

  20. A novel method for preparing vertically grown single-crystalline gold nanowires

    International Nuclear Information System (INIS)

    Tung, H-T; Nien, Y-T; Chen, I-G; Song, J-M

    2008-01-01

    A surfactant-free, template-less and seed-less method, namely the thermal-assisted photoreduction (TAP) process, has been developed to synthesize vertically grown Au nanowires (30-80 nm in diameter and about 2 μm in length) on the surface of thin film titanium dioxide (TiO 2 ), which is locally excited by blackbody radiation. The Au nanowires thus produced are single-crystalline with a preferred [11 bar 0] growth direction. The electrical behavior investigated using a nanomanipulation device indicates that the Au nanowires possess an excellent electrical resistivity of about 3.49 x 10 -8 Ω m.