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Sample records for crystal silicon scs

  1. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  2. Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

    Science.gov (United States)

    Ciszek, T. F.; Schwuttke, G. H. (Inventor)

    1979-01-01

    A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

  3. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  4. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  5. Photonic crystal sensors based on porous silicon.

    Science.gov (United States)

    Pacholski, Claudia

    2013-04-09

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  6. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  7. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  8. Composite single crystal silicon scan mirror substrates Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Single crystal silicon is a desirable mirror substrate for scan mirrors in space telescopes. As diameters of mirrors become larger, existing manufacturing...

  9. A virtual crystallization furnace for solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, I.; Franke, D. [ACCESS e.V., Aachen (Germany); Krumbe, W.; Liebermann, J. [Bayer AG, Krefeld-Uerdingen (Germany)

    1994-12-31

    Blocks of silicon for photovoltaic applications are economically crystallized in large casting furnaces. The quality of the material is determined by the velocity of the crystallization front, the flatness of the liquid-solid interface and the thermal gradients in the solid during cooling. The process cycle time, which is determined by the rate of crystallization and cooling, has a large effect on the process economic viability. Traditionally trial and error was used to determine the process control parameters, the success of which depended on the operator`s experience and intuition. This paper presents a numerical model, which when completed by a fitted data set, constitutes a virtual model of a real crystallization furnace, the Virtual Crystallization Furnace (VCF). The time-temperature distribution during the process cycle is the main output, which includes a display of actual liquid-solid front position. Moreover, solidification velocity, temperature gradients and thermal stresses can be deduced from this output. The time needed to run a simulation on a modern work-station is approximately 1/6 of real process time, thereby allowing the user to make many process variations at very reasonable costs. Therefore the VCF is a powerful tool for optimizing the process in order to reduce cycle time and to increase product quality.

  10. Planar photonic crystal waveguides in silicon oxynitride

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Borel, Peter Ingo;

    Most work on planar photonic crystals has been performed on structures based on semiconducting crystals such as Si and III-V compounds. Due to the high index contrast between the host material and the air holes (e.g., Si has n = 3.5), these structures exhibit a large photonic band gap. However......ON glasses with different indices between 1.46 and 1.77 and we are currently fabricating photonic crystals in SiON on a silica buffer layer on Si. Simulations show that a complete band gap can indeed be created for TE-polarised light in the SiON structures, making them promising candidates for new photonic......, at visible wavelengths they absorb light very strongly. In contrary, silicon oxynitride (SiON) glasses offer high transparency down to blue and ultraviolet wavelengths. Thus, SiON photonic crystal waveguides can open for new possibilities, e.g., within sensing and life sciences. We have fabricated Si...

  11. Piezoresistance measurement on single crystal silicon nanowires

    Science.gov (United States)

    Toriyama, Toshiyuki; Funai, Daisuke; Sugiyama, Susumu

    2003-01-01

    A p-type single crystal silicon nanowire bridge and a four-terminal nanowire element were fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The longitudinal piezoresistance coefficient πl[110] was found to be 38.7×10-11 Pa-1 at a surface impurity concentration of Ns=9×1019cm-3 for the nanowire bridge. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at Ns=9×1019 cm-3 for the four-terminal nanowire element. These values are 54.8% larger than the values obtained from p+ diffused piezoresistors, which are used in conventional mechanical sensors.

  12. Nanocrystalline silicon films prepared by laser-induced crystallization

    Institute of Scientific and Technical Information of China (English)

    傅广生; 于威; 李社强; 侯海虹; 彭英才; 韩理

    2003-01-01

    The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon (α-Si) thin films on silicon or glass substrates. The α-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing.Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission-electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.

  13. Mechanism of the emergence of the photo-EMF upon silicon liquid crystal-single crystal contact

    Science.gov (United States)

    Budagov, K. M.; Guseinov, A. G.; Pashaev, B. G.

    2017-03-01

    The effect light has on a silicon liquid crystal-single crystal contact at different temperatures of the surface doping of silicon, and when BaTiO3 nanoparticles are added to the composition of a liquid crystal, is studied. The mechanism of the emergence of the photo-EMF in the liquid crystal-silicon structure is explained.

  14. Oxygen precipitation behavior in heavily arsenic doped silicon crystals

    Science.gov (United States)

    Haringer, Stephan; Gambaro, Daniela; Porrini, Maria

    2017-01-01

    Silicon crystals containing different levels of arsenic concentration and oxygen content were grown, and samples were taken at various positions along the crystal, to study the influence of three main factors, i.e. the initial oxygen content, the dopant concentration and the thermal history, on the nucleation of oxygen precipitates during crystal growth and cooling in the puller. The crystal thermal history was reconstructed by means of computer modeling, simulating the temperature distribution in the crystal at several growth stages. The oxygen precipitation was characterized after a thermal cycle of 4 h at 800 °C for nuclei stabilization +16 h at 1000 °C for nuclei growth. Oxygen precipitates were counted under microscope on the cleaved sample surface after preferential etching. Lightly doped silicon samples were also included, as reference. Our results show that even in heavily arsenic doped silicon the oxygen precipitation is a strong function of the initial oxygen concentration, similar to what has been observed for lightly doped silicon. In addition, a precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7×1019 cm-3 compared to lightly doped samples with the same initial oxygen content and crystal thermal history. Finally, a long permanence time of the crystal in the temperature range between 450 °C and 750 °C enhances the oxygen precipitation, showing that this is an effective temperature range for oxygen precipitation nucleation in heavily arsenic doped silicon.

  15. A MEMS Device for in-situ TEM Test of SCS Nanobeam

    Institute of Scientific and Technical Information of China (English)

    JIN QinHua; WANG YueLin; LI Tie; LI XinXin; XU FangFang

    2008-01-01

    In-situ tensile testing in TEM (transmission electron microscopy) is a useful tool for studying mechanical properties of nano-structures because it can provide quanti- tative information on sample deformation at atomic scale. To facilitate in-situ TEM tensile testa of SCS (single crystal silicon) nanobeam, a MEMS tensile-testing chip was designed and fabricated. The chip was fabricated by means of bulk micro- machining and wafer bonding techniques. An SCS nanobeam, a comb drive ac- tuator, a force sensor beam and an electron beam window were integrated into the chip. With the on-chip comb-drive-actuator stretching the nanobeam and in-situ TEM observation, tensile test on a 90 nm-thick nanobeam was performed and the strain-stress relationship was obtained. The Young's modulus was fitted to be 161 GPa and did not show the size effect.

  16. A MEMS Device for in-situ TEM Test of SCS Nanobeam

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In-situ tensile testing in TEM (transmission electron microscopy) is a useful tool for studying mechanical properties of nano-structures because it can provide quanti-tative information on sample deformation at atomic scale. To facilitate in-situ TEM tensile tests of SCS (single crystal silicon) nanobeam, a MEMS tensile-testing chip was designed and fabricated. The chip was fabricated by means of bulk micro-machining and wafer bonding techniques. An SCS nanobeam, a comb drive ac-tuator, a force sensor beam and an electron beam window were integrated into the chip. With the on-chip comb-drive-actuator stretching the nanobeam and in-situ TEM observation, tensile test on a 90 nm-thick nanobeam was performed and the strain-stress relationship was obtained. The Young’s modulus was fitted to be 161 GPa and did not show the size effect.

  17. Inorganic arrangement crystal beryllium, lithium, selenium and silicon

    CERN Document Server

    Gobato, Ricardo; Fedrigo, Desire Francine Gobato

    2015-01-01

    The use of inorganic crystals technology has been widely date. Since quartz crystals for watches in the nineteenth century, and common way radio in the early twentieth century, to computer chips with new semiconductor materials. Chemical elements such as beryllium, lithium, selenium and silicon, are widely used in technology. The development of new crystals arising from that arrangement can bring technological advances in several areas of knowledge. The likely difficulty of finding such crystals in nature or synthesized, suggest an advanced study of the subject. A study using computer programs with ab initio method was applied. As a result of the likely molecular structure of the arrangement of a crystal was obtained.

  18. The lattice parameter of highly pure silicon single crystals

    Science.gov (United States)

    Becker, P.; Scyfried, P.; Siegert, H.

    1982-08-01

    From crystal to crystal comparison, the d 220 lattice spacing in PERFX and WASO silicon crystals used in the only two existing absolute measurements have been found to be equal within ±2×10-7 d 220. This demonstrates that generic variabilities of the two crystals account only for a small part of the 1.8×10-6 d 220 difference in the two absolute measurements. In a new series of 336 single measurements, our d 220 value reported recently has been confirmed within ±2×10-8 d 220. From these results we derive the following lattice parameter for highly pure silicon single crystals: a 0=(543 102.018±0.034) fm (at 22.5°C, in vacuum).

  19. Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films

    CERN Document Server

    Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

    2013-01-01

    We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

  20. Photonic Crystal Sensors Based on Porous Silicon

    OpenAIRE

    Claudia Pacholski

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photo...

  1. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  2. Nanostructured porous silicon photonic crystal for applications in the infrared

    OpenAIRE

    G. Recio-Sánchez; Torres-Costa, V.; Manso-Silván, M.; R. J. Martín-Palma

    2012-01-01

    In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D) and three-dimensional (3D) devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing ...

  3. Excimer laser crystallization of amorphous silicon on metallic substrate

    Science.gov (United States)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  4. Focused ion beam milling of photonic crystals in bulk silicon

    NARCIS (Netherlands)

    Hu, Wenbin; Ridder, de René M.; Tong, Xing-Lin

    2009-01-01

    Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The eff

  5. Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Joanna Ptasinski

    2014-03-01

    Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

  6. Stability limits for the horizontal ribbon growth of silicon crystals

    Science.gov (United States)

    Daggolu, Parthiv; Yeckel, Andrew; Bleil, Carl E.; Derby, Jeffrey J.

    2013-01-01

    A rigorous, thermal-capillary model, developed to couple heat transfer, melt convection and capillary physics, is employed to assess stability limits of the HRG system for growing silicon ribbons. Extending the prior understanding of this process put forth by Daggolu et al. [Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals, Journal of Crystal Growth 355 (2012) 129-139], model results presented here identify additional failure mechanisms, including the bridging of crystal onto crucible, the spilling of melt from the crucible, and the undercooling of melt at the ribbon tip, that are consistent with prior experimental observations. Changes in pull rate, pull angle, melt height, and other parameters are shown to give rise to limits, indicating that only narrow operating windows exist in multi-dimensional parameter space for stable growth conditions that circumvent these failure mechanisms.

  7. Simulations of electron channeling in bent silicon crystal

    CERN Document Server

    Sushko, G B; Korol, A V; Greiner, Walter; Solov'yov, A V; Polozkov, R G; Ivanov, V K

    2013-01-01

    We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along Si(110) crystallographic planes are studied for the projectile energies 195--855 MeV and different curvatures of the bent crystal.

  8. High-Q silicon carbide photonic-crystal cavities

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  9. Liquid crystal wavefront corrector on silicon

    NARCIS (Netherlands)

    Loktev, M.; Vdovin, G.; Nanver, L.

    2005-01-01

    A reflective-type liquid crystal (LC) wavefront corrector with modal addressing is described. The corrector’s backplane has an array of pixel electrodes interconnected by a network of discrete resistors. The resistive network serves to form the local voltage profile that controls the phase distribut

  10. Silicon photonic crystals and spontaneous emission

    NARCIS (Netherlands)

    Dood, Michiel Jacob Andries de

    2002-01-01

    Photonic crystals, i.e. materials that have a periodic variation in refractive index, form an interesting new class of materials that can be used to modify spontaneous emission and manipulate optical modes in ways that were impossible so far. This thesis is divided in three parts. Part I discusses

  11. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  12. Fabrication of silicon inverse woodpile photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hermatschweiler, Martin; Wegener, Martin [DFG-Center for Functional Nanostructures (CFN) and Institut fuer Angewandte Physik, Universitaet Karlsruhe (TH), 76131 Karlsruhe (Germany); Ozin, Geoffrey A. [Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6 (Canada); Ledermann, Alexandra; Freymann, Georg von [Institut fuer Nanotechnologie, Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, 76021 Karlsruhe (Germany)

    2007-07-01

    We fabricate silicon inverse woodpile structures for the first time. Direct laser writing of polymeric templates and a novel silicon-singleinversion procedure lead to structures with gap/midgap ratios of 14.2% centered at 2.5 {mu}m wavelength. First, polymer templates are fabricated by direct laser writing or other means. Next, we deposit a thin silica coating via atomic layer deposition (ALD) on the polymer and - without removing the polymer - infiltrate the composite structure with Si via Si chemical vapor deposition (CVD). The silica shell provides sufficient and reliable stabilization for the high temperature CVD process. Finally, the silica is etched out and the polymer is calcined in air, leading to a Si inverse woodpile structure. Optical measurements and comparison to bandstructure and scattering-matrix calculations reveal a gap/midgap ratio of 14.2% centered at 2.5 {mu}m. An optimized structure could open a band gap with a gap/midgap ratio of up to 20.5%.

  13. Shock compression of [001] single crystal silicon

    Science.gov (United States)

    Zhao, S.; Hahn, E. N.; Kad, B.; Remington, B. A.; Bringa, E. M.; Meyers, M. A.

    2016-05-01

    Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.

  14. Crystal lattice optimization and new forms of silicon

    Science.gov (United States)

    Stucke, David P.

    In Chapter 1 a basic outline of the two main methods used in this thesis is given. A genetic algorithm optimization method based on the concept of natural selection is given. The important factors to consider in creating an effective genetic algorithm search are described. I then give a brief overview of Density Functional Theory (DFT) which is the technique most commonly used to do ab-inito calculations on solid-state systems. The basis for its formulation along with how it is applied to a practical system with some approximations is discussed. In Chapter 2 a description of a genetic search algorithm for optimizing the crystal structure of an infinite crystal is given. This method is applied to a system of colloidal spheres, where the packing density is the figure of merit for structure selection. Our examination of self-assembled multi-component crystals of nanoparticles predicts several new structures with stoichiometries of AB (fused spheres), ABC2, ABC 3, ABC4 and AB2 C2. These new structures have hierarchical layered or linear arrangements that could be useful for functional self-assembled systems. For example, the fused-sphere binary crystal assembles with zig-zag rows of parallel nanowires. The genetic search suceeds while a comparable stochastic algorithm fails to find any structures better than the well-known unary or binary phase-separated systems. Here we describe the algorithm and the results it produces: several new classes of binary and ternary crystals of spherical nanoparticles, including a family of layered perovskite-like systems and an unusual three-dimensional array of parallel zig-zag nanowires. In Chapter 3, We discuss the possibility of constructing new forms of silicon by building in multiple bonds consistent with molecules that have been produced experimentally. We find a dilated diamond crystal lattice containing a silicon-silicon triple bond that is metastable. This structure has very soft vibrational modes that are common in similar

  15. Observation of soliton compression in silicon photonic crystals

    Science.gov (United States)

    Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

    2014-01-01

    Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

  16. Proton extraction from the CERN SPS using bent silicon crystals

    Science.gov (United States)

    Elsener, K.; Fidecaro, G.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Vuagnin, G.; Weisse, E.

    1996-10-01

    The extraction of high energy particles from a circular accelerator by means of channeling in bent crystals is an attractive alternative to classical extraction schemes, in particular for high energy proton colliders where a classical scheme becomes expensive and incompatible with normal operation. This paper reviews the ongoing extraction experiments at the CERN-SPS with bent silicon crystals. It describes the principles of beam extraction by means of a bent crystal and the different extraction schemes used: first- and multi-pass extraction and the methods to create diffusion. The limitations in tuning the accelerator to the desired impact parameters and crucial items concerning crystal preparation, bending and pre-alignment are discussed. The experimental procedures including an overview of the detection of circulating and extracted beam are given. Finally, the paper summarizes the results of these experiments together with ideas for future developments.

  17. Crystallization Behavior of M97 Series Silicone Cushions

    Energy Technology Data Exchange (ETDEWEB)

    Chien, A.; DeTeresa, S.; Cohenour, R.; Schnieder, J.; LeMay, J.; Balazs, B.

    2000-09-07

    M97 series siloxanes are poly(dimethyl-diphenyl) siloxanes that are reinforced through a mixture of precipitated and fumed silica fillers which are blended in through the addition of a short chain polydimethylsiloxane processing aid. M97 silicones exhibit crystallization at -80.25 C by thermal (modulated differential scanning calorimetry) and mechanical (dynamic mechanical analysis) techniques. Isothermal dynamic mechanical analysis experiments illustrated that crystallization occurred over a 1.8 hour period in silica-filled systems and 2.8 hours in unfilled systems. The onset of crystallization typically occurred after a 30 minute incubation/nucleation period. {gamma}-radiation caused the crystallization rate to decrease proportionally with dosage, but did not decrease the amount of crystallization that ultimately occurred. Irradiation in vacuum resulted in slower overall crystallization rates compared to air irradiation due to increased crosslinking of the polymer matrix under vacuum. Modulated differential scanning calorimetry contrasted the crystallization and melting behavior of pure PDMS versus the M97 base polymer and helped determine which component of the composite was the origin of the crystallization phenomena.

  18. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...

  19. Synthesis, crystal growth and mechanical properties of Bismuth Silicon Oxide (BSO) single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Riscob, B. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Institute for Plasma Research, Bhat, Gandhinagar 382428, Gujarat (India); Shkir, Mohd. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Ganesh, V. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Vijayan, N.; Maurya, K.K. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Kishan Rao, K. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Bhagavannarayana, G., E-mail: bhagavan@mail.nplindia.ernet.in [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India)

    2014-03-05

    Highlights: • Synthesis of Bismuth Silicon Oxide (BSO). • Single crystal growth of BSO by Czochralski (Cz) method. • Complete mechanical analysis by device fabrication point of view. • Theoretical and experimental calculations of mechanical properties. -- Abstract: Bismuth Silicon Oxide (BSO) is an efficient material for piezo-electric and electro-optic applications. In this article, growth of BSO single crystal by high temperature Czochralski melt growth technique and its detailed mechanical characterization by Vickers microhardness, fracture toughness, crack propagation, brittleness index and yield strength have been reported. The raw material was synthesized by solid state reaction using the stoichiometric ratio of high purity bismuth tri-oxide and silicon di-oxide. The synthesized material was charged in the platinum crucible and then melted. The required rotation and pulling rate was optimized for BSO single crystal growth and good quality single crystal has been harvested after a time span of 5 days. Powder X-ray diffraction analysis confirms the parent crystallization phase of BSO. The experimentally studied mechanical behavior of the crystal is explained using various theoretical models. The anisotropic nature of the crystals is studied using Knoop indentation technique.

  20. Stress topology within silicon single-crystal cantilever beam

    Directory of Open Access Journals (Sweden)

    Alexander P. Kuzmenko

    2015-06-01

    Full Text Available Flexural elastic deformations of single-crystal silicon have been studied using microspectral Raman scattering. Results are reported on nano-scaled sign-changing shifts of the main peak of the microspectral Raman scattering within the single-crystal silicon cantilever beam during exposure to flexural stress. The maximum value of Raman shift characteristic of the 518 cm−1 silicon peak at which elasticity still remains has been found to be 8 cm−1 which corresponds to an applied deformation of 4 GPa. We report three-dimensional maps of the distribution of internal stresses at different levels of deformation up to irreversible changes and brittle fracture of the samples that clearly show compression and tension areas and an undeformed area. A qualitative explanation of the increase in the strength of the cantilever beam due to its small thickness (2 μm has been provided that agrees with the predictions of real-world physical parameters obtained in SolidWorks software environment with the SimulationXpress module. We have defined the relative strain of the beam surface which was 2% and received a confirmation of changes in the silicon lattice parameter from 0.54307 nm to 0.53195 nm by the BFGS algorithm.

  1. Phase sensitive amplification in silicon photonic crystal waveguides

    CERN Document Server

    Yanbing,; Husko, Chad; Schroder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2013-01-01

    We experimentally demonstrate phase sensitive amplification (PSA) in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase extinction ratio is obtained in a record compact 196 {\\mu}m nanophotonic device due to broadband slow-light, in spite of the presence of two-photon absorption and free-carriers. Numerical calculations show good agreement with the experimental results.

  2. Phase-sensitive amplification in silicon photonic crystal waveguides.

    Science.gov (United States)

    Zhang, Yanbing; Husko, Chad; Schröder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2014-01-15

    We experimentally demonstrate phase-sensitive amplification in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase-extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow light, in spite of the presence of two-photon absorption and free carriers. Numerical calculations show good agreement with the experimental results.

  3. Simulation of Electronic Center Formation by Irradiation in Silicon Crystals

    Science.gov (United States)

    Yeritsyan, H. N.; Sahakyan, A. A.; Grigoryan, N. E.; Harutyunyan, V. V.; Tsakanov, V. M.; Grigoryan, B. A.; Yeremyan, A. S.; Amatuni, G. A.

    2017-02-01

    We present the results of a study on localized electronic centers formed in crystals by external influences (impurity introduction and irradiation). The main aim is to determine the nature of these centers in the forbidden gap of the energy states of the crystal lattice. For the case of semiconductors, silicon (Si) was applied as model material to determine the energy levels and concentration of radiation defects for application to both doped and other materials. This method relies on solving the appropriate equation describing the variation of the charge carrier concentration as a function of temperature n( T) for silicon crystals with two different energy levels and for a large set of N 1, N 2 (concentrations of electronic centers at each level), and n values. A total of almost 500 such combinations were found. For silicon, energy level values of ɛ 1 = 0.22 eV and ɛ 2 = 0.34 eV were used for the forbidden gap (with corresponding slopes determined from experimental temperature-dependent Hall-effect measurements) and compared with photoconductivity spectra. Additionally, it was shown that, for particular correlations among N 1, N 2, and n, curve slopes of ɛ 1/2 = 0.11 eV, ɛ 2/2 = 0.17 eV, and α = 1/2( ɛ 1 + ɛ 2) = 0.28 eV also apply. Comparison between experimental results for irradiation of silicon crystals by 3.5-MeV energy electrons and Co60 γ-quanta revealed that the n( T) curve slopes do not always coincide with the actual energy levels (electronic centers).

  4. Silicon single-crystal cryogenic optical resonator.

    Science.gov (United States)

    Wiens, Eugen; Chen, Qun-Feng; Ernsting, Ingo; Luckmann, Heiko; Rosowski, Ulrich; Nevsky, Alexander; Schiller, Stephan

    2014-06-01

    We report on the demonstration and characterization of a silicon optical resonator for laser frequency stabilization, operating in the deep cryogenic regime at temperatures as low as 1.5 K. Robust operation was achieved, with absolute frequency drift less than 20 Hz over 1 h. This stability allowed sensitive measurements of the resonator thermal expansion coefficient (α). We found that α=4.6×10(-13)  K(-1) at 1.6 K. At 16.8 K α vanishes, with a derivative equal to -6×10(-10)  K(-2). The temperature of the resonator was stabilized to a level below 10 μK for averaging times longer than 20 s. The sensitivity of the resonator frequency to a variation of the laser power was also studied. The corresponding sensitivities and the expected Brownian noise indicate that this system should enable frequency stabilization of lasers at the low-10(-17) level.

  5. Enhanced crystallization of amorphous silicon thin films using embedded silicon nanocrystals

    Science.gov (United States)

    Anderson, Curtis Michael

    This thesis is concerned with the production of silicon thin films for photovoltaic applications. Much research has been carried out to find a stable, more efficient alternative to amorphous silicon, resulting in a number of various amorphous/crystalline mixed-phase film structures with properties superior to amorphous silicon. This thesis work details a completely new approach to mixed-phase film deposition, focusing on the fast crystallization of these films. The deposition of amorphous silicon films with embedded nanocrystals was carried out via a dual-plasma system. It is known that plasma conditions to produce high quality films are much different from those to produce particles. Hence the experimental system used here involved two separate plasmas to allow the optimum production of the crystalline nanoparticles and the amorphous film. Both plasmas use 13.56 MHz excitation voltage with diluted silane as the silicon precursor. The nanoparticle production reactor is a flow-through device that can be altered to control the size of the particles from around 5--30 nm average diameter. The film production reactor is a parallel-plate capacitively-coupled plasma system, into which the aerosol-suspended nanoparticles were injected. The nanocrystals could either be "co-deposited" simultaneously with the amorphous film, or be deposited separately in a layer-by-layer technique; both approaches are discussed in detail. Measurements of the film conductivity provide for the first time unambiguous evidence that the presence of nanocrystallites above 5 nm in the amorphous film have a direct impact on the electronic properties of co-deposited films. Further measurements of the film structure by transmission electron microscopy (TEM) and Raman spectroscopy demonstrate clearly the effect of embedded nanocrystals on the annealed crystallization process; the immediate growth of the crystal seeds has been observed. Additionally, a newly discovered mechanism of film crystallization

  6. X-ray and NMR study of the structural features of SCS-pincer metal complexes of the group 10 triad

    NARCIS (Netherlands)

    Kruithof, C.A.|info:eu-repo/dai/nl/311433871; Dijkstra, H.P.|info:eu-repo/dai/nl/241119952; Lutz, M.|info:eu-repo/dai/nl/304828971; Spek, A.L.|info:eu-repo/dai/nl/156517566; Klein Gebbink, R.J.M.|info:eu-repo/dai/nl/166032646; van Koten, G.|info:eu-repo/dai/nl/073839191

    2008-01-01

    SCS-pincer metal complexes [MX(SCS)] (SCS = [2,6-(RSCH2)2C6H3]−; R = Ph: PhSCS; R = Me: MeSCS; M = Pd, Pt, Ni) have been synthesized via mild and tolerant oxidative addition procedures. The complexes have been characterized by 1H and 13C NMR spectroscopy and X-ray crystal structure determination.

  7. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  8. Thermally actuated resonant silicon crystal nanobalances

    Science.gov (United States)

    Hajjam, Arash

    As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale electromechanical resonators have recently been presented. MEMS resonators, as low-cost highly integrated and ultra-sensitive mass sensors, can potentially provide new opportunities and unprecedented capabilities in the area of mass sensing. Such devices can provide orders of magnitude higher mass sensitivity and resolution compared to Film Bulk Acoustic resonators (FBAR) or the conventional quartz and Surface Acoustic Wave (SAW) resonators due to their much smaller sizes and can be batch-fabricated and utilized in highly integrated large arrays at a very low cost. In this research, comprehensive experimental studies on the performance and durability of thermally actuated micromechanical resonant sensors with frequencies up to tens of MHz have been performed. The suitability and robustness of the devices have been demonstrated for mass sensing applications related to air-borne particles and organic gases. In addition, due to the internal thermo-electro-mechanical interactions, the active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-sustained-oscillation without the need for any electronic circuitry. This unique property has been deployed to demonstrate a prototype self-sustained sensor for air-borne particle monitoring. I have managed to overcome one of the obstacles for MEMS resonators, which is their relatively poor temperature stability. This is a major drawback when compared with the conventional quartz crystals. A significant decrease of the large negative TCF for the resonators has been attained by doping the devices with a high

  9. Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

    Directory of Open Access Journals (Sweden)

    G. Recio-Sánchez

    2012-01-01

    Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

  10. Photonic crystal enhanced silicon cell based thermophotovoltaic systems.

    Science.gov (United States)

    Yeng, Yi Xiang; Chan, Walker R; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J; Joannopoulos, John D; Soljacic, Marin; Čelanović, Ivan

    2015-02-09

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm(-2) at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide - silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency for any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm(-2) and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.

  11. Silicon crystal as a low work function collector

    Science.gov (United States)

    Chang, K. H.; Shimada, K.

    1975-01-01

    A test vehicle with a low work function collector which can be incorporated in a thermionic converter was constructed from standard vacuum components including an ultrahigh vacuum ion pump. The collector assembly was fabricated by diffusion bonding a (100) oriented silicon single crystal to a molybdenum block. The silicon surface was treated with cesium and oxygen to produce an NEA-type condition and the results were tested by photoemission and work function measurements. An n-type silicon collector was successfully activated to a work function of 1.0 eV, which was verified by photoemission spectral yield measurements. The stability test of an activated surface at elevated temperatures was conducted in the range from room temperature to 619 K, which was slightly lower than the designed collector temperature of 700 K. The work function measurements clearly demonstrated that the behavior of cesium replenishment on the activated Si surface was similar in nature to that of a metallic surface; that is, the loss of cesium by thermal desorption could be compensated by maintaining an adequate vapor pressure of cesium.

  12. Plasmonic Light Trapping in Ultrathin Single Crystal Silicon Membrane for Solar Cells Application

    Science.gov (United States)

    2015-06-14

    for solar cell applications. Sub-ten micrometer free standing silicon membranes were produced by the chemical etching of silicon wafers. The produced...membranes were observed to be mechanically flexible, yet sufficiently sturdy to tolerate the different processing steps during solar cell fabrication...Approved for public release; distribution is unlimited. Plasmonic Light Trapping in Ultrathin Single Crystal Silicon Membrane for Solar Cells

  13. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    Science.gov (United States)

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-04-26

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported.

  14. Environmental concerns of supply chain sustainability (SCS)

    Science.gov (United States)

    Mokhtar, Mohd Faiz; Omar, Badrul; Nor, Nik Hisyamudin Muhd; Pauzi, Nur Fazlinda Mohd; Hasan, Sulaiman; Mohamed, W. A. Wan

    2017-04-01

    Environment concern is one important aspect for supply chain sustainability (SCS). Nowadays, company's activities give a lot of impact on the environment. Through these activities, there are other SCS issue of environment were identified. In this paper, the proposed SCS issue of environmental concern will be determined from Corporate Sustainability Report (CSR). Using a total weightage of 0.333 (after dividing into three aspects of sustainability), each proposed issues will be classified according to the company activities in order to determined weightage for each issue. Those weightages then will be used in developing of score metric for SCS in design phase. Result shows that the carbon footprint is the major concern for SCS of environment while environmental management system is a lowest concern for SCS environment.

  15. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

    Directory of Open Access Journals (Sweden)

    Wan Zhenyu

    2011-01-01

    Full Text Available Abstract In this paper, a positive effect of rapid thermal annealing (RTA technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%. Si nanocrystals (Si-NC containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

  16. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wu, Ying, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  17. Lifetime analysis of laser crystallized silicon films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Kühnapfel, Sven; Amkreutz, Daniel; Gall, Stefan [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH - Institut Silizium-Photovoltaik, Berlin (Germany); Huang, Jialiang; Teal, Anthony; Kampwerth, Henner; Varlamov, Sergey [University of New South Wales, Sydney (Australia)

    2015-08-07

    Only recently, the quality of liquid phase crystallized silicon directly on glass substrates made a huge leap towards the quality of multi-crystalline wafers with open circuit voltages well above 600 mV. In this paper, we investigate the material quality in order to identify the factors limiting further performance improvements. We employ photoluminescence imaging on a state of the art test structure with lifetime calibration by transient photoluminescence. The resulting lifetime map is converted into an effective diffusion length map and the origin of regions with short lifetimes is investigated with electron backscattering and transmission electron microscopy. High local dislocation densities in areas with dissociated coincidence site lattice boundaries were found to be responsible for the localised quenching of the photoluminescence signal.

  18. On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kashish; Branca, Annalisa; Illiberi, Andrea; Creatore, Mariadriana; Sanden, Mauritius C.M. van de [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Tichelaar, Frans D. [Kavli Institute of Nanoscience, Delft University of Technology (Netherlands)

    2011-05-15

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiH{sub x} bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Biomolecular screening with encoded porous-silicon photonic crystals

    Science.gov (United States)

    Cunin, Frédérique; Schmedake, Thomas A.; Link, Jamie R.; Li, Yang Yang; Koh, Jennifer; Bhatia, Sangeeta N.; Sailor, Michael J.

    2002-09-01

    Strategies to encode or label small particles or beads for use in high-throughput screening and bioassay applications focus on either spatially differentiated, on-chip arrays or random distributions of encoded beads. Attempts to encode large numbers of polymeric, metallic or glass beads in random arrays or in fluid suspension have used a variety of entities to provide coded elements (bits)-fluorescent molecules, molecules with specific vibrational signatures, quantum dots, or discrete metallic layers. Here we report a method for optically encoding micrometre-sized nanostructured particles of porous silicon. We generate multilayered porous films in crystalline silicon using a periodic electrochemical etch. This results in photonic crystals with well-resolved and narrow optical reflectivity features, whose wavelengths are determined by the etching parameters. Millions of possible codes can be prepared this way. Micrometre-sized particles are then produced by ultrasonic fracture, mechanical grinding or by lithographic means. A simple antibody-based bioassay using fluorescently tagged proteins demonstrates the encoding strategy in biologically relevant media.

  20. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

    Institute of Scientific and Technical Information of China (English)

    Liao Yan-Ping; Shao Xi-Bin; Gao Feng-Li; Luo Wen-Sheng; Wu Yuan; Fu Guo-Zhu; Jing Hai; Ma Kai

    2006-01-01

    Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi2) assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si.The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILCwithout migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

  1. Process development for single-crystal silicon solar cells

    Science.gov (United States)

    Bohra, Mihir H.

    Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

  2. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  3. Silicon photonic crystals doped with colloidally synthesized lead salt semiconductors nanocrystals.

    Science.gov (United States)

    Gutman, Nadav; Armon, Akiva; Shandalov, Michael; Osherov, Anna; Golan, Yuval; Sa'ar, Amir

    2009-06-01

    The fabrication of two-dimensional and three-dimensional silicon photonic crystals doped with lead salt nanocrystals is reported. The silicon based photonic crystals of macro-porous silicon are fabricated by electro-chemical etching via masked silicon wafers with the periodicity along the third dimension is achieved by modulating the anodization current and voltage. The chemical solution deposition technique has been utilized to deposit thin layers of lead salts (PbS and PbSe) nanocrystals into the pores. Infrared transmission measurements revealed a considerable red-shift of the photonic band gap in a good agreement with numerical calculations.

  4. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...

  5. Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs

    Science.gov (United States)

    Lee, Su Woong; Kang, Jung Su; Park, Kyu Chang

    2016-02-01

    We introduced a carbon-nanotube (CNT) electron beam (C-beam) for thin film crystallization and thin film transistor (TFT) applications. As a source of electron emission, a CNT emitter which had been grown on a silicon wafer with a resist-assisted patterning (RAP) process was used. By using the C-beam exposure, we successfully crystallized a silicon thin film that had nano-sized crystalline grains. The distribution of crystalline grain size was about 10 ˜ 30 nm. This nanocrystalline silicon thin film definitely had three crystalline directions which are (111), (220) and (311), respectively. The silicon TFTs crystallized by using a C-beam exposure showed a field effect mobility of 20 cm2/Vs and an on/off ratio of more than 107. The C-beam exposure can modify the bonding network of amorphous silicon with its proper energy.

  6. Efficiently Harvesting Sun Light for Silicon Solar Cells through Advanced Optical Couplers and A Radial p-n Junction Structure

    Directory of Open Access Journals (Sweden)

    Hsin-Cheng Lee

    2010-04-01

    Full Text Available Silicon-based solar cells (SCs promise to be an alternative energy source mainly due to: (1 a high efficiency-to-cost ratio, (2 the absence of environmental-degradation issues, and (3 great reliability. Transition from wafer-based to thin-film SC significantly reduces the cost of SCs, including the cost from the material itself and the fabrication process. However, as the thickness of the absorption (or the active layer decreases, the energy-conversion efficiency drops dramatically. As a consequence, we discuss here three techniques to increase the efficiency of silicon-based SCs: (1 photonic crystal (PC optical couplers and (2 plasmonic optical couplers to increase efficiency of light absorption in the SCs, and (3 a radial p-n junction structure, decomposing light absorption and diffusion path into two orthogonal directions. The detailed mechanisms and recent research progress regarding these techniques are discussed in this review article.

  7. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing....

  8. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    OpenAIRE

    Chen Xiao; Jian Guo; Peng Zhang; Cheng Chen; Lei Chen; Linmao Qian

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was...

  9. Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

    Directory of Open Access Journals (Sweden)

    Juan Ren

    2016-02-01

    Full Text Available Single crystal silicon (SCS diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC or silicon on insulator (SOI, for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively.

  10. THE CRYSTAL STRUCTURE OF THE NEW SILICON CARBIDE POLYMORPH 69R,

    Science.gov (United States)

    The 69R polymorph is one of the 32 silicon carbide polymorphs recently discovered by us. The space group is R3m and the unit cell is hexagonal with...and in two industrial silicon carbide crystal plates. They all pair with the fundamental type 6H. The five ways of pairing are: 6H + 69R + 87R, 6H

  11. Buckling of Single-Crystal Silicon Nanolines under Indentation

    Directory of Open Access Journals (Sweden)

    Min K. Kang

    2008-01-01

    Full Text Available Atomic force microscope-(AFM- based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.

  12. Silicon crystal growth from the melt: Analysis from atomic and macro scales

    Energy Technology Data Exchange (ETDEWEB)

    Kakimoto, K.; Liu, L.; Kitashima, T.; Murakawa, A.; Hashimoto, Y. [Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580 (Japan)

    2005-04-01

    The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Silicon Crystals Formation Using Silicatein-Like Cathepsin of Marine Sponge Latrunculia oparinae.

    Science.gov (United States)

    Kamenev, D G; Shkryl, Y N; Veremeichik, G N; Golotin, V A; Naryshkina, N N; Timofeeva, Y O; Kovalchuk, S N; Semiletova, I V; Bulgakov, V P

    2015-12-01

    The cDNA fragment encoding the catalytic domain of the new silicatein-like cathepsin enzyme LoCath was expressed in a strain Top10 of Escherichia coli, extracted and purified via nickel-affinity chromatography. Recombinant enzyme performed silica-polymerizing activity when mixed with water-soluble silica precursor-tetrakis-(2-hydroxyethyl)-orthosilicate. Scanning electron microscopy revealed hexagonal, octahedral and β-tridimit crystals. Energy dispersion fluorescence X-ray spectrometry analysis showed that all these crystals consist of pure silicon oxide. It is the first report about the ability of marine sponge's cathepsin to polymerize silicon, as well as about the structure and composition of the silicon oxide crystal formed by recombinant cathepsin. Further study of the catalytic activity of silicatein and cathepsin will help to understand the biosilification processes in vivo, and will create basis for biotechnological use of recombinant proteins for silicon polymerization.

  14. Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

    Science.gov (United States)

    Jensen, B. N.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Atherton, H. W.; Clément, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafström, P.; Jeanneret, J. B.; Hage-Ali, M.; Siffert, P.

    1992-08-01

    A 450 GeV proton beam has been bent by various angles from 4 to 14 mrad using planar channeling in a (111) silicon crystal. Detailed investigations of the deflected beam as well as the unbent and scattered particles have been performed. The incident beam had a divergence of about 35 μrad (FWHM). 20% of the protons hitting the crystal front face were found to be initially channeled. The measured bending efficiencies range from 5 to 2% (for increasing deflection angles) are compared to theoretical estimates including surface acceptance and dechanneling in bent silicon crystals.

  15. Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, B.N.; Moeller, S.P.; Uggerhoej, E.; Worm, T. (Inst. for Synchrotron Radiation, Aarhus Univ. (Denmark)); Atherton, H.W.; Clement, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafstroem, P.; Jeanneret, J.B. (European Organization for Nuclear Research (CERN), Geneva (Switzerland)); Hage-Ali, M.; Siffert, P. (Centre de Recherches Nucleaires, 67 - Strasbourg (France))

    1992-08-01

    A 450 GeV proton beam has been bent by various angles from 4 to 14 mrad using planar channeling in a (111) silicon crystal. Detailed investigations of the deflected beam as well as the unbent and scattered particles have been performed. The incident beam had a divergence of about 35 [mu]rad (FWHM). 20% of the protons hitting the crystal front face were found to be initially channeled. The measured bending efficiencies range from 5 to 2% (for increasing deflection angles) and are compared to theoretical estimates including surface acceptance and dechanneling in bent silicon crystals. (orig.).

  16. Electrically active light-element complexes in silicon crystals grown by cast method

    Science.gov (United States)

    Sato, Kuniyuki; Ogura, Atsushi; Ono, Haruhiko

    2016-09-01

    Electrically active light-element complexes called thermal donors and shallow thermal donors in silicon crystals grown by the cast method were studied by low-temperature far-infrared absorption spectroscopy. The relationship between these complexes and either crystal defects or light-element impurities was investigated by comparing different types of silicon crystals, that is, conventional cast-grown multicrystalline Si, seed-cast monolike-Si, and Czochralski-grown Si. The dependence of thermal and the shallow thermal donors on the light-element impurity concentration and their annealing behaviors were examined to compare the crystals. It was found that crystal defects such as dislocations and grain boundaries did not affect the formation of thermal or shallow thermal donors. The formation of these complexes was dominantly affected by the concentration of light-element impurities, O and C, independent of the existence of crystal defects.

  17. Temperature fields in a growing solar silicon crystal

    Directory of Open Access Journals (Sweden)

    Kondrik A. I.

    2012-06-01

    Full Text Available The optimal thermal terms for growing by Czochralski method Si single-crystals, suitable for making photoelectric energy converters, has been defined by the computer simulation method. Dependences of temperature fields character and crystallization front form on the diameter of the crystal, stage and speed of growing, and also on correlation between diameter and height of the crystal has been studied.

  18. A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

    Science.gov (United States)

    Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

    2012-07-01

    We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

  19. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  20. Flux-enhanced monochromator by ultrasound excitation of annealed Czochralski-grown silicon crystals

    CERN Document Server

    Koehler, S; Seitz, C; Magerl, A; Mashkina, E; Demin, A

    2003-01-01

    The neutron flux from monochromator crystals can be increased by ultrasound excitation or by strain fields. Rocking curves of both a perfect float-zone silicon crystal and an annealed Czochralski silicon crystal with oxygen precipitates were measured at various levels of ultrasound excitation on a cold-neutron backscattering spectrometer. We find that the effects of the dynamic strain field from the ultrasound and the static strain field from the defects are not additive. Rocking curves were also taken at different ultrasound frequencies near resonance of the crystal/ultrasound-transducer system with a time resolution of 1 min. Pronounced effects of crystal heating are observed, which render the conditions for maximum neutron reflectivity delicate. (orig.)

  1. Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Brandon [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-14

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  2. Fabrication and optical characterization of macroporous silicon photonic crystals

    OpenAIRE

    Balbo, Matteo

    2014-01-01

    The computer revolution experienced in recent years has been possible thanks to semiconductor materials, such as silicon, germanium and gallium arsenide. The success of the silicon-based microelectronics is due to the ability to integrate multiple elements on the same chip such as processors, memories, and interfaces. However, the increasing miniaturization and the realization of faster devices have revealed the difficulty to overcome the intrinsic limits of these materials. For example, devi...

  3. The development of an inspection system for defects in silicon crystal growth

    Science.gov (United States)

    Liu, Ya-Cheng; Tsai, Hsin-Yi; Hung, Min-Wei; Huang, Kuo-Cheng

    2013-03-01

    This study presents an inspection system to detect the growth defects of silicon crystals that comprise a CCD camera, an LED light source, and power modulation. The defects on multicrystalline silicon can be observed clearly while the silicon wafer were irradiated by the red LED light at a small lighting angle (i.e., 20-30°). However, the growth defects on monocrystalline silicon wafer were difficult to observe because of it low image intensity. And then, the growth defects image was significantly enhanced when the wafer was illuminated by a white LED (WLED) and rotated at a specific angle (i.e., 23°). The experimental results showed that the WLED illumination system made the growth defects more easily observable than did other LED sources (i.e., red, blue, and green LEDs). In addition, the proposed inspection system can be used for on-line fast detection for quality control of monocrystalline silicon wafer.

  4. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.

  5. Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

    Science.gov (United States)

    Bakan, G.; Cywar, A.; Silva, H.; Gokirmak, A.

    2009-06-01

    Nanocrystalline silicon microwires are self-heated through single, large amplitude, and microsecond voltage pulses. Scanning electron micrographs show very smooth wire surfaces after the voltage pulse compared to as-fabricated nanocrystalline texture. Voltage-pulse induced self-heating leads to significant conductance improvement, suggesting crystallization of the wires. The minimum resistivity during the pulse is extracted from wires of different dimensions as 75.0±4.6 μΩ cm, matching previously reported values for liquid silicon. Hence, nanocrystalline silicon microwires melt through self-heating during the voltage pulse and resolidify upon termination of the pulse, resulting in very smooth and less-resistive crystalline structures.

  6. Molecular Dynamics Simulation of the Crystal Orientation and Temperature Influences in the Hardness on Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Hongwei Zhao

    2014-01-01

    Full Text Available A nanoindentation simulation using molecular dynamic (MD method was carried out to investigate the hardness behavior of monocrystalline silicon with a spherical diamond indenter. In this study, Tersoff potential was used to model the interaction of silicon atoms in the specimen, and Morse potential was used to model the interaction between silicon atoms in the specimen and carbon atoms in the indenter. Simulation results indicate that the silicon in the indentation zone undergoes phase transformation from diamond cubic structure to body-centred tetragonal and amorphous structure upon loading of the diamond indenter. After the unloading of the indenter, the crystal lattice reconstructs, and the indented surface with a residual dimple forms due to unrecoverable plastic deformation. Comparison of the hardness of three different crystal surfaces of monocrystalline silicon shows that the (0 0 1 surface behaves the hardest, and the (1 1 1 surface behaves the softest. As for the influence of the indentation temperature, simulation results show that the silicon material softens and adhesiveness of silicon increases at higher indentation temperatures.

  7. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing.

  8. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing. PMID:28084433

  9. Fabrication of Triangular Nanobeam Waveguide Networks in Bulk diamond Using Single-Crystal Silicon Hard Masks

    CERN Document Server

    Bayn, I; Li, L; Goldstein, J A; Schröder, T; Zhang, J; Chen, E H; Gaathon, O; Lu, M; Stein, A; Ruggiero, C A; Salzman, J; Kalish, R; Englund, D

    2014-01-01

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q=2.51x10^6) photonic crystal cavities with low mode volume (Vm=1.062x({\\lambda}/n)^3), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q=3x103.

  10. Maximum length of large diameter Czochralski silicon single crystals at fracture stress limit of seed

    Science.gov (United States)

    Kim, K. M.; Smetana, P.

    1990-03-01

    Growth of large diameter Czochralski (CZ) silicon crystals require complete elimination of dislocations by means of Dash technique, where the seed diameter is reduced to a small size typically 3 mm in conjunction with increase in the pull rate. The maximum length of the large CZ silicon is estimated at the fracture stress limit of the seed neck diameter ( d). The maximum lengths for 200 and 300 mm CZ crystals amount to 197 and 87 cm, respectively, with d = 0.3 cm; the estimated maximum weight is 144 kg.

  11. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation

    CERN Document Server

    Chen, Charlton J; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-01-01

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 mm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ~ 30 mW laser powers. Over this tuning range, the cavity Q decreases from 3.2\\times10^5 to 1.2\\times10^5. Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  12. 40 GHz electro-optic modulation in hybrid silicon-organic slotted photonic crystal waveguides.

    Science.gov (United States)

    Wülbern, Jan Hendrik; Prorok, Stefan; Hampe, Jan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K-Y; Jenett, Martin; Jacob, Arne

    2010-08-15

    In this Letter we demonstrate broadband electro-optic modulation with frequencies of up to 40 GHz in slotted photonic crystal waveguides based on silicon-on-insulator substrates covered and infiltrated with a nonlinear optical polymer. Two-dimensional photonic crystal waveguides in silicon enable integrated optical devices with an extremely small geometric footprint on the scale of micrometers. The slotted waveguide design optimizes the overlap of the optical and electric fields in the second-order nonlinear optical medium and, hence, the interaction of the optical and electric waves.

  13. Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

    CERN Document Server

    Gu, Tingyi; Hao, Yufeng; Li, Yilei; Hone, James; Wong, Chee Wei; Lavrinenko, Andrei; Low, Tony; Heinz, Tony F

    2015-01-01

    We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

  14. Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystals

    DEFF Research Database (Denmark)

    Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng;

    2015-01-01

    We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes depending...... on the relation of the photonic crystal lattice constant and the relevant modal wavelengths, that is, plasmonic, photonic, and free-space. By optimizing the design of the substrate, these resonant modes can increase the absorption of graphene in the infrared, facilitating enhanced performance of modulators......, filters, sensors, and photodetectors utilizing silicon photonic platforms....

  15. Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

    Directory of Open Access Journals (Sweden)

    Guan X J

    2016-01-01

    Full Text Available For discovering the principle of processing parameter combination for the stable growth and better wafer quality of Φ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal, the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for Φ450 mm Cz silicon crystal growth are some different from that for Φ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.

  16. Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M. Yu., E-mail: barab@iptm.ru; Vyatkin, A. F.; Volkov, V. T.; Gruzintsev, A. N.; Il’in, A. I.; Trofimov, O. V. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

    2015-12-15

    Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve the problem of 1.5-µm wavelength radiation input-output and its frequency filtering, strip diffraction gratings and two-dimensional photonic crystals are integrated into waveguides. The reflection and transmission spectra of gratings and photonic crystals are calculated. The waveguide-mode-attenuation coefficient for a polycrystalline silicon waveguide is experimentally estimated.

  17. Controlling light with high-Q silicon photonic crystal nanocavities: Photon confinement, nonlinearity and coherence

    Science.gov (United States)

    Yang, Xiaodong

    The strong light localization and long photon lifetimes in two-dimensional silicon photonic crystal nanocavities with high quality factor (Q ) and subwavelength modal volume (V) significantly enhance the light-matter interactions, presenting many opportunities to explore new functionalities in silicon nanophotonic integrated circuits for on-chip all-optical information processing, optical computation and optical communications. This thesis will focus on the design, nanofabrication, and experimental characterization of both passive and active silicon nanophotonic devices based on two-dimensional high-Q silicon photonic crystal nanocavities. Three topics of controlling light with these high-Q nanocavities will be presented, including (1) photon confinement mechanism and cavity resonance tuning, (2) enhancement of optical nonlinearities, and (3) all-optical analogue to coherent interferences. The first topic is photon confinement in two-dimensional high- Q silicon photonic crystal nanocavities. In Chapter 2, the role of Q/V as the figure of merit for the enhanced light-matter interaction in optical microcavities and nanocavities is explained and different types of high-Q optical microcavities and nanocavities are reviewed with an emphasis on two-dimensional photonic crystal nanocavities. Then the nanofabrication process and the Q characterization are illustrated for the two-dimensional silicon photonic crystal nanocavities. In Chapter 3, the post-fabrication digital resonance tuning of high-Q silicon photonic crystal nanocavities using atomic layer deposition is proposed and demonstrated, with wide tuning range and precise control of cavity resonances while preserving high quality factors. The second topic is the enhancement of optical nonlinearities in two-dimensional high-Q silicon photonic crystal nanocavities, including stimulated Raman scattering and thermo-optical nonlinearities. In Chapter 4, the enhanced stimulated Raman scattering for low threshold Raman

  18. Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation

    Directory of Open Access Journals (Sweden)

    ANDREJA VALCIC

    1999-09-01

    Full Text Available Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. The optical properties of the bismuth silicon oxide single crystals were investigated. The obtained results are discussed and compared with published data.

  19. Focused ion beam milling of photonic crystals in silicon on insulator

    NARCIS (Netherlands)

    Hu, Wenbin; Hopman, Wico; Ridder, de René

    2009-01-01

    A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. T

  20. Synthesis and Characterization of Star-like Liquid Crystals Centered by Silicon

    Institute of Scientific and Technical Information of China (English)

    Jian Qiang LIU; Qi Zhen ZHANG; Jing Zhi ZHANG

    2004-01-01

    The synthesis and characterization of two new star-like liquid crystals are reported.They are made of a silicon core and four alkoxyazobenzene monomers in the periphery. Their phase behaviors and the structures are determined by infrared absorption spectroscopy (IR),nuclear magnetic resonance spectroscopy (NMR), elemental analysis (EA), polarizing optical microscope (POM) and differential scanning calorimetry (DSC).

  1. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

    DEFF Research Database (Denmark)

    Wistisen, T. N.; Uggerhoj, U. I.; Wienands, U.;

    2016-01-01

    We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at...

  2. Preferential {100} grain orientation in 10 micrometer-thick laser crystallized multicrystalline silicon on glass

    Energy Technology Data Exchange (ETDEWEB)

    Kühnapfel, S., E-mail: sven.kuehnapfel@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin (Germany); Nickel, N.H.; Gall, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin (Germany); Klaus, M.; Genzel, C. [Helmholtz-Zentrum Berlin für Material und Energie, Abteilung Mikrostruktur- und Eigenspannungsanalyse, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Rech, B.; Amkreutz, D. [Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin (Germany)

    2015-02-02

    Liquid phase crystallization of 10 μm thin silicon layers on glass substrates was performed with a line-shaped continuous wave laser beam. The process window was investigated in terms of the scanning velocity of the laser, the pre-heating of the specimens and the applied laser intensity. We have identified the entire process window, in which large-scale crystallization without deformation or destruction of the substrate and cracking of the silicon layer can be obtained. The grain orientations of the resulting Si layers were analyzed using both electron backscatter diffraction (EBSD) and X-ray diffraction (XRD). The influence of the critical crystallization parameters on the grain orientation of the silicon film was examined. EBSD and XRD measurements show that a preferential {100} surface texture and {100} and {101} orientations in scanning direction of the laser can be achieved if appropriate crystallization parameters are used. This texture formation is accompanied with a substantial decrease of high angle grain boundaries. - Highlights: • Zone melting of thin silicon films (10 μm) directly on glass substrates. • The process window was examined in dependence of all process parameters. • A preferential {100} orientation was obtained within a specific parameter range. • A reduction of high angle boundaries is accompanied with the texture formation.

  3. Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite

    Science.gov (United States)

    Qi, Gongjin; Zhang, Changrui; Hu, Haifeng; Cao, Feng; Wang, Siqing; Jiang, Yonggang; Li, Bin

    2005-10-01

    The crystallization behavior of a new type of ceramic matrix composites, three-dimensional silica fiber reinforced silicon nitride matrix composite prepared by perhydropolysilazane infiltration and pyrolysis, was investigated by X-ray diffractometry and Fourier transform infrared spectroscopy. With the post-annealing treatment of the amorphous as-received composite at elevated tempertures of 1400 and 1600 °C in nitrogen atmosphere, there was remarkable suppression of the crystallization of polymer-derived silicon nitride ceramic matrix into α-Si 3N 4 and silica fibers into α-cristobalite, which was probably attributed to the phase of silicon oxynitrides originating from the strong fiber/matrix interfacial chemical reaction.

  4. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, Frederick M.; Helenbrook, Brian T.

    2016-10-11

    An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

  5. Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditions

    Science.gov (United States)

    Pereyaslavtsev, Alexander; Sokolov, Igor; Sinev, Leonid

    2016-11-01

    In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process.

  6. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  7. Signature of a three-dimensional photonic band gap observed on silicon inverse woodpile photonic crystals

    CERN Document Server

    Huisman, Simon R; Woldering, Léon A; Leistikow, Merel D; Mosk, Allard P; Vos, Willem L

    2010-01-01

    We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap.

  8. Crystal Growth Behaviors of Silicon during Melt Growth Processes

    Directory of Open Access Journals (Sweden)

    Kozo Fujiwara

    2012-01-01

    Full Text Available It is imperative to improve the crystal quality of Si multicrystal ingots grown by casting because they are widely used for solar cells in the present and will probably expand their use in the future. Fine control of macro- and microstructures, grain size, grain orientation, grain boundaries, dislocation/subgrain boundaries, and impurities, in a Si multicrystal ingot, is therefore necessary. Understanding crystal growth mechanisms in melt growth processes is thus crucial for developing a good technology for producing high-quality Si multicrystal ingots for solar cells. In this review, crystal growth mechanisms involving the morphological transformation of the crystal-melt interface, grain boundary formation, parallel-twin formation, and faceted dendrite growth are discussed on the basis of the experimental results of in situ observations.

  9. Optical properties of one-dimensional photonic crystals obtained by micromatchining silicon (a review)

    Science.gov (United States)

    Tolmachev, V. A.

    2017-04-01

    The theoretical and experimental investigations of photonic band gaps in one-dimensional photonic crystals created by micromatchining silicon, which have been performed by the author as part of his doctoral dissertation, are presented. The most important result of the work is the development of a method of modeling photonic crystals based on photonic band gap maps plotted in structure-property coordinates, which can be used with any optical materials and in any region of electromagnetic radiation, and also for nonperiodic structures. This method made it possible to realize the targeted control of the optical contrast of photonic crystals and to predict the optical properties of optical heterostructures and three-component and composite photonic crystals. The theoretical findings were experimentally implemented using methods of micromatchining silicon, which can be incorporated into modern technological lines for the production of microchips. In the IR spectra of a designed and a fabricated optical heterostructure (a composite photonic crystal), extended bands with high reflectivities were obtained. In a Si-based three-component photonic crystal, broad transmission bands and photonic band gaps in the middle IR region have been predicted and experimentally demonstrated for the first time. Si-liquid crystal periodic structures with electric-field tunable photonic band-gap edges have been investigated. The one-dimensional photonic crystals developed based on micromatchining silicon can serve as a basis for creating components of optical processors, as well as highly sensitive chemical and biological sensors in a wide region of the IR spectrum (from 1 to 20 μm) for lab-on-a-chip applications.

  10. Synthesis optimization of photonic crystals based on silicon and vanadium dioxides

    Science.gov (United States)

    Akhmadeev, A. A.; Sarandaev, E. V.; Salakhov, M. Kh

    2013-08-01

    The photonic crystal is the material which structure is characterized by periodic distribution of refraction index in the spatial directions, which have the photonic band gaps in a spectrum of own electromagnetic states. There are numerous approaches of the creation of photonic crystals. In the present the optimal conditions of synthesis of photonic crystals based on silicon dioxide as well as the inverse photonic crystals based on vanadium dioxide are investigated. It is known that the synthesis process is influenced by many different factors. We have studied the dependence of the particle size on the concentration of reagents, as well as on the duration of the reaction. These studies are important for the production of samples of photonic crystals with a definite structure.

  11. Optimization and applications of planar silicon-based photonic crystal devices

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan;

    2005-01-01

    such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode......Very low propagation losses in straight planar photonic crystal waveguides have previously been reported. A next natural step is to add functionality to the photonic crystal waveguides and create ultra compact optical components. We have designed and fabricated such structures in a silicon......-on-insulator material. The photonic crystal is defined by holes with diameter 250 nm arranged in a triangular lattice having lattice constant 400 nm. Leaving out single rows of holes creates the planar photonic crystal waveguides. Different types of couplers and splitters, aswell as 60. 90 and 120 degree bends have...

  12. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  13. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Science.gov (United States)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  14. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  15. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth

    Science.gov (United States)

    Sabanskis, A.; Surovovs, K.; Virbulis, J.

    2017-01-01

    Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

  16. Effect of Silicon Substitution on the Crystal Properties of Cyanate Ester Monomers (Briefing Charts)

    Science.gov (United States)

    2015-08-17

    with 2 phr nonylphenol All samples were melted, blended, and de-gassed for 30 min. prior to cure in silicone molds under N2, cure schedule for 1 hr at...g ) Temperature (°C) BADCy (1st heating) BADCy (2nd Heating) Si-Containing Cyanate Esters: Non-isothermal DSC 9 114 kJ/mol Post- cure Tg: 305 °C BADCy...Charts 3. DATES COVERED (From - To) July 2015-August 2015 4. TITLE AND SUBTITLE EFFECT OF SILICON SUBSTITUTION ON THE CRYSTAL PROPERTIES OF

  17. Shear dependent nonlinear vibration in a high quality factor single crystal silicon micromechanical resonator

    Science.gov (United States)

    Zhu, H.; Shan, G. C.; Shek, C. H.; Lee, J. E.-Y.

    2012-07-01

    The frequency response of a single crystal silicon resonator under nonlinear vibration is investigated and related to the shear property of the material. The shear stress-strain relation of bulk silicon is studied using a first-principles approach. By incorporating the calculated shear property into a device-level model, our simulation closely predicts the frequency response of the device obtained by experiments and further captures the nonlinear features. These results indicate that the observed nonlinearity stems from the material's mechanical property. Given the high quality factor (Q) of the device reported here (˜2 × 106), this makes it highly susceptible to such mechanical nonlinear effects.

  18. Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Hao, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu [College of Electronic Information, Sichuan University, Chengdu 610064 (China); Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Gu, Tingyi, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu; McMillan, James F.; Wong, Chee Wei, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu [Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Petrone, Nicholas; Zande, Arend van der; Hone, James C. [Mechanical Engineering, Columbia University, New York, New York 10027 (United States); Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee [The Institute of Microelectronics, Singapore 117685 (Singapore); Feng, Guoying [College of Electronic Information, Sichuan University, Chengdu 610064 (China); Zhou, Shouhuan [College of Electronic Information, Sichuan University, Chengdu 610064 (China); North China Research Institute of Electro-Optics, Beijing 100015 (China)

    2014-09-01

    We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

  19. Phosphorus diffusion in float zone silicon crystal growth

    DEFF Research Database (Denmark)

    Larsen, Theis Leth

    2000-01-01

    .8'' conguration, for two different values of the recombination factor. The calculation of the 0.8'' crystal is compared to DLTS measurements, revealing good agreement for one of the recombination factors, which however does not fit the Voronkov theory. Both factors are used in the simulation of the two 4...

  20. Striations in CZ silicon crystals grown under various axial magnetic field strengths

    Science.gov (United States)

    Kim, K. M.; Smetana, P.

    1985-10-01

    Inhibition of fluid flow instabilities in the melt by the axial magnetic field in Czochralski silicon crystal growth (AMCZ) is investigated precisely by a high-sensitivity striation etch in conjunction with temperature measurements. The magnetic field strength (B) was varied up to 4.0 kG, incremented mostly in 0.5-kG/2.5-cm crystal length. The convection flow was substantially suppressed at B greater than or equal to 1.0 kG. A low oxygen level of 2-3 ppm and a high resistivity of 400 ohm-cm is achieved in the AMCZ silicon crystals at B greater than or equal to 1.0 kG. Random striations at B = O, characteristic of turbulent convection, assumed progressively a periodicity, indicative of oscillatory convection at B from 0.35-4.0 kG. The striation contrast or 'intensity' decreased steadily with the increase in B. At B = 4 kG, most of the crystal was free of striations, although some weak, localized periodic striations persisted near the crystal periphery. Spreading-resistance measurement shows, however, a uniform dopant distribution in all crystal sections grown at B from 0.35-4.0 kG within a few percent.

  1. Observation of Proton Reflection on Bent Silicon Crystals at the CERN SPS

    CERN Document Server

    Scandale, Walter

    2007-01-01

    We report the observation of the so-called volume reflection effect with 400 GeV/c protons interacting with bent silicon crystals in the H8 beam line performed by the H8RDD22 Collaboration at the CERN SPS. The volume reflection is an effect of the same nature of the particle channeling among the crystalline planes of a bent crystal. The reflection occurs at the tangency point of a particle trajectory with the bent crystalline planes where the transverse component of the particle momentum is reversed. The measurements were realized with a high spatial resolution detector mainly based on silicon microstrips showing the effect on particle trajectories of bent silicon crystals in several configurations. The proton beam was deviated in a direction opposite to that of channeling by 12-14 mrad, which is 1.3 times the critical angle, with an efficiency greater than 97% in a range of the proton-to-crystal incident angle as wide as the bending angle of crystallographic planes. This evidence opens new perspectives for m...

  2. Digital silicon photomultiplier readout of a new fast and bright scintillation crystal (Ce:GFAG)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Yong-Seok [Department of Bio-convergence Engineering, Korea University, Seoul (Korea, Republic of); Leem, Hyun-Tae [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Yamamoto, Seiichi [Department of Medical Technology, Nagoya University Graduate School of Medicine, Nagoya (Japan); Choi, Yong, E-mail: ychoi@sogang.ac.kr [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Kamada, Kei [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai (Japan); C& A corporation, Sendai (Japan); Yoshikawa, Akira [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai (Japan); C& A corporation, Sendai (Japan); Institute for Material Research, Tohoku University, Sendai (Japan); Park, Sang-Geon [Department of Electrical & Electronics, Silla University, Pusan (Korea, Republic of); Yeom, Jung-Yeol, E-mail: jungyeol@korea.ac.kr [Department of Bio-convergence Engineering, Korea University, Seoul (Korea, Republic of); School of Biomedical Engineering, Korea University, Seoul (Korea, Republic of)

    2016-10-01

    A new Gadolinium Fine Aluminum Gallate (Ce:GFAG) scintillation crystal with both high energy resolution and fast timing properties has successfully been grown. Compared to Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} (Ce:GAGG), this new inorganic scintillation crystal has a high luminosity similar to and a faster decay time. In this paper, we report on the timing and energy performance results of the new GFAG scintillation crystal read out with digital silicon photomultipliers (dSiPM) for positron emission tomography (PET) application. The best coincidence resolving time (FWHM) of polished 3×3×5 mm{sup 3} crystals was 223±6 ps for GFAG crystals compared to 396±28 ps for GAGG crystals and 131±3 ps for LYSO crystals respectively. An energy resolution (511 keV peak of Na-22) of 10.9±0.2% was attained with GFAG coupled to dSiPM after correcting for saturation effect, compared to 9.5±0.3% for Ce:GAGG crystals and 11.9±0.4% for LYSO crystals respectively. It is expected that this new scintillator may be competitive in terms of overall properties such as energy resolution, timing resolution and growing (raw material) cost, compared to existing scintillators for positron emission tomography (PET).

  3. Digital silicon photomultiplier readout of a new fast and bright scintillation crystal (Ce:GFAG)

    Science.gov (United States)

    Lee, Yong-Seok; Leem, Hyun-Tae; Yamamoto, Seiichi; Choi, Yong; Kamada, Kei; Yoshikawa, Akira; Park, Sang-Geon; Yeom, Jung-Yeol

    2016-10-01

    A new Gadolinium Fine Aluminum Gallate (Ce:GFAG) scintillation crystal with both high energy resolution and fast timing properties has successfully been grown. Compared to Gd3Al2Ga3O12 (Ce:GAGG), this new inorganic scintillation crystal has a high luminosity similar to and a faster decay time. In this paper, we report on the timing and energy performance results of the new GFAG scintillation crystal read out with digital silicon photomultipliers (dSiPM) for positron emission tomography (PET) application. The best coincidence resolving time (FWHM) of polished 3×3×5 mm3 crystals was 223±6 ps for GFAG crystals compared to 396±28 ps for GAGG crystals and 131±3 ps for LYSO crystals respectively. An energy resolution (511 keV peak of Na-22) of 10.9±0.2% was attained with GFAG coupled to dSiPM after correcting for saturation effect, compared to 9.5±0.3% for Ce:GAGG crystals and 11.9±0.4% for LYSO crystals respectively. It is expected that this new scintillator may be competitive in terms of overall properties such as energy resolution, timing resolution and growing (raw material) cost, compared to existing scintillators for positron emission tomography (PET).

  4. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching.

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-09

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  5. A silicon single-crystal cryogenic optical resonator

    CERN Document Server

    Wiens, Eugen; Ernsting, Ingo; Luckmann, Heiko; Rosowski, Ulrich; Nevsky, Alexander; Schiller, Stephan

    2014-01-01

    We report on the demonstration and characterization of a silicon optical resonator for laser frequency stabilization, operating in the deep cryogenic regime at temperatures as low as 1.5 K. Robust operation was achieved, with absolute frequency drift less than 20 Hz over 1 hour. This stability allowed sensitive measurements of the resonator thermal expansion coefficient ($\\alpha$). We found $\\alpha=4.6\\times10^{-13}$ ${\\rm K^{-1}}$ at 1.6 K. At 16.8 K $\\alpha$ vanishes, with a derivative equal to $-6\\times10^{-10}$ ${\\rm K}^{-2}$. The temperature of the resonator was stabilized to a level below 10 $\\mu$K for averaging times longer than 20 s. The sensitivity of the resonator frequency to a variation of the laser power was also studied. The corresponding sensitivities and the expected Brownian noise indicate that this system should enable frequency stabilization of lasers at the low-$10^{-17}$ level.

  6. Silicon single-crystal cryogenic optical resonator: erratum

    Science.gov (United States)

    Wiens, Eugen; Chen, Qun-Feng; Ernsting, Ingo; Luckmann, Heiko; Rosowski, Ulrich; Nevsky, Alexander; Schiller, Stephan

    2015-01-01

    We report on the demonstration and characterization of a silicon optical resonator for laser frequency stabilization, operating in the deep cryogenic regime at temperatures as low as 1.5 K. Robust operation was achieved, with absolute frequency drift less than 20 Hz over 1 hour. This stability allowed sensitive measurements of the resonator thermal expansion coefficient ($\\alpha$). We found $\\alpha=4.6\\times10^{-13}$ ${\\rm K^{-1}}$ at 1.6 K. At 16.8 K $\\alpha$ vanishes, with a derivative equal to $-6\\times10^{-10}$ ${\\rm K}^{-2}$. The temperature of the resonator was stabilized to a level below 10 $\\mu$K for averaging times longer than 20 s. The sensitivity of the resonator frequency to a variation of the laser power was also studied. The corresponding sensitivities and the expected Brownian noise indicate that this system should enable frequency stabilization of lasers at the low-$10^{-17}$ level.

  7. Theory of High Frequency Rectification by Silicon Crystals

    Science.gov (United States)

    Bethe, H. A.

    1942-10-29

    The excellent performance of British "red dot" crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal, C. For high conversion efficiency, the product of this capacity and of the "forward" (bulk) resistance R {sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10 {sup -3} cm. For a point contact the radius must be less than 1.5 x 10 {sup -3} cm. and the resulting small area is conducive to burn-out. The effect of "tapping" is probably to reduce the area of contact. (auth)

  8. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    Science.gov (United States)

    Fryett, Taylor K.; Seyler, Kyle L.; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2017-03-01

    Nano-resonators integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonator-enhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ∼200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  9. High-density G-centers, light-emitting point defects in silicon crystal

    Directory of Open Access Journals (Sweden)

    Koichi Murata

    2011-09-01

    Full Text Available We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atoms into the silicon during heating; freezing in the created G-centers during rapid cooling. The method provides a surface region of up to 200 nm with highly dense carbon atoms of up to 4 × 1019 cm−3 to create G-centers, above the solubility limit of carbon atoms in silicon crystal (3 × 1017 cm−3. Photoluminescence measurement reveals that the higher-speed laser annealing produces stronger G-center luminescence. We demonstrate electrically-driven emission from the G-centers in samples made using our new method.

  10. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    CERN Document Server

    Fryett, Taylor K; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2016-01-01

    Nano-resonator integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonatorenhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with the ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ~200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  11. Origin of a Nanoindentation Pop-in Event in Silicon Crystal.

    Science.gov (United States)

    Abram, R; Chrobak, D; Nowak, R

    2017-03-03

    The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si-III/XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.

  12. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    Energy Technology Data Exchange (ETDEWEB)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk [Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Building 36, Cambridge, Massachusetts 02139 (United States); Lu, M.; Stein, A.; Ruggiero, C. A. [Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973 (United States); Salzman, J. [Department of Electrical Engineering and Microelectronics Research Center, Technion, Haifa 32000 (Israel); Kalish, R. [Department of Physics and Solid State Institute, Technion, Haifa 32000 (Israel)

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

  13. Experimental setup for investigating silicon solid phase crystallization at high temperatures.

    Science.gov (United States)

    Schmidt, Thomas; Gawlik, Annett; Schneidewind, Henrik; Ihring, Andreas; Andrä, Gudrun; Falk, Fritz

    2013-07-15

    An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.

  14. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Masaki [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)]. E-mail: masaki@dera.zaiko.kyushu-u.ac.jp; Higashida, Kenji [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)

    2005-07-25

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals.

  15. Fabrication and Characterization of On-Chip Integrated Silicon Photonic Bragg Grating and Photonic Crystal Cavity Thermometers

    CERN Document Server

    Klimov, Nikolai N; Ahmed, Zeeshan

    2015-01-01

    We report on the fabrication and characterization of photonic-based nanothermometers, a silicon photonic Bragg grating and photonic crystal cavity. When cladded with silicon dioxide layer the sensors have at least eight times better sensitivity compared to the sensitivity of conventional fiber Bragg grating sensors. We demonstrate that these photonic thermometers are a viable temperature sensing solution.

  16. Comparison of measurements and simulation results in 300 mm CZ silicon crystal growth

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A special thermal modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory (CGL) of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth Interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy's first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thermal stress distribution during 300 mm Czochralski (CZ) silicon crystal growth with different growth rates were predicted.

  17. Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

    Science.gov (United States)

    Gao, B.; Chen, X. J.; Nakano, S.; Kakimoto, K.

    2010-04-01

    An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 10 14 atom/cm 3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

  18. Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond In the present paper, numerical analysis of the melt flow in the Czochralski (CZ) crystal growth configuration, the three dimensional (3D) modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Finally, comparison of numerical analysis with experimental measurements is discussed.

  19. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Science.gov (United States)

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  20. Observation of Multiple Volume Reflection of Ultrarelativistic Protons by a Sequence of Several Bent Silicon Crystals

    CERN Document Server

    Scandale, Walter; Baricordi, S; Dalpiaz, P; Fiorini, M; Guidi, V; Mazzolari, A; Della Mea, G; Milan, R; Ambrosi, G; Zuccon, P; Bertucci, B; Bürger, W; Duranti, M; Cavoto, G; Santacesaria, R; Valente, P; Luci, C; Iacoangeli, F; Vallazza, E; Afonin, A G; Chesnokov, Yu A; Kotov, V I; Maisheev, V A; Yazynin, I A; Kovalenko, A D; Taratin, A M; Denisov, A S; Gavrikov, Y A; Ivanov, Yu M; Lapina, L P; Malyarenko, L G; Skorogobogatov, V V; Suvorov, V M; Vavilov, S A; Bolognini, D; Hasan, S; Mozzanica, A; Prest, M

    2009-01-01

    The interactions of 400 GeV protons with different sequences of bent silicon crystals have been investigated at the H8 beam line of the CERN Super Proton Synchrotron. The multiple volume reflection of the proton beam has been studied in detail on a five-crystal reflector measuring an angular beam deflection =52.96±0.14 µrad. The efficiency was found larger than 80% for an angular acceptance at the reflector entrance of 70 µrad, with a maximal efficiency value of =0.90±0.01±0.03.

  1. The model of solid phase crystallization of amorphous silicon under elastic stress

    OpenAIRE

    2000-01-01

    Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic s...

  2. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    Science.gov (United States)

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  3. Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs.

    Science.gov (United States)

    Hou, Jin; Citrin, D S; Wu, Huaming; Gao, Dingshan; Zhou, Zhiping

    2011-06-15

    Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors.

  4. Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2013-01-01

    Full Text Available The preservation of seed crystals is important for the casting of quasi-single crystalline (QSC silicon ingots. We carried out transient global simulations of the feedstock melting process in an industrial-sized directional solidification (DS furnace to investigate key factors influencing seed preservation. The power distribution between the top and side heaters is adjusted in the conventional furnace for multicrystalline silicon ingots and in the evolved furnace with a partition block for QSC silicon ingots. The evolution of the solid-liquid interface for melting and the temperature distribution in the furnace core area are analyzed. The power distribution can influence the temperature gradient in the silicon domain significantly. However, its effect on seed preservation is limited in both furnaces. Seed crystals can be preserved in the evolved furnace, as the partition block reduces the radiant heat flux from the insulation walls to the heat exchange block and prevents the heat flowing upwards under the crucible. Therefore, the key to seed preservation is to control radiant heat transfer in the DS furnace and guarantee downward heat flux under the crucible.

  5. The effect of dopants on the brittle-to-ductile transition in silicon single crystals

    Science.gov (United States)

    Hong, Youn Jeong; Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji

    2010-07-01

    The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

  6. The effect of dopants on the brittle-to-ductile transition in silicon single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Youn Jeong; Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji, E-mail: hong@kyudai-mse.or [Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan)

    2010-07-01

    The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

  7. Study the performance of LYSO and CeBr3 crystals using Silicon Photomultipliers

    Science.gov (United States)

    Kryemadhi, Abaz

    2016-03-01

    The Silicon Photomultipliers (SiPMs) are novel photon-detectors which have been progressively found their use in particle physics. Their small size, good single photon resolution, simple readout, and immunity to magnetic fields offers advantages compared to traditional photomultipliers. LYSO and CeBr3 crystals are relatively new scintillators with high light yield and fast decay time. The response of these detectors to low energy gamma rays and cosmic ray muons will be presented. Messiah College Workload Reallocation Program.

  8. Observation of four-wave mixing in slow-light silicon photonic crystal waveguides.

    Science.gov (United States)

    McMillan, James F; Yu, Mingbin; Kwong, Dim-Lee; Wong, Chee Wei

    2010-07-19

    Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.

  9. Observations of four-wave mixing in slow-light silicon photonic crystal waveguides

    CERN Document Server

    McMillan, James F; Kwong, Dim-Lee; Wong, Chee Wei

    2010-01-01

    Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.

  10. Averaged Stokes polarimetry applied to characterize parallel-aligned liquid crystal on silicon displays

    OpenAIRE

    Márquez Ruiz, Andrés; Martínez Guardiola, Francisco Javier; Gallego Rico, Sergi; Ortuño Sánchez, Manuel; Beléndez Vázquez, Augusto; Pascual Villalobos, Inmaculada

    2014-01-01

    Parallel-aligned liquid crystal on silicon (PA-LCoS) displays have become the most attractive spatial light modulator device for a wide range of applications, due to their superior resolution and light efficiency, added to their phase-only capability. Proper characterization of their linear retardance and phase flicker instabilities is a must to obtain an enhanced application of PA-LCoS. We present a novel polarimetric method, based on Stokes polarimetry, we have recently proposed for the mea...

  11. Electrical dependencies of optical modulation capabilities in digitally addressed parallel aligned liquid crystal on silicon devices

    OpenAIRE

    Martínez Guardiola, Francisco Javier; Márquez Ruiz, Andrés; Gallego Rico, Sergi; Ortuño Sánchez, Manuel; Francés Monllor, Jorge; Beléndez Vázquez, Augusto; Pascual Villalobos, Inmaculada

    2014-01-01

    Parallel aligned liquid crystal on silicon (PA-LCoS) displays have found wide acceptance in applications requiring phase-only modulation. Among LCoS devices, and PA-LCoS as a specific case, digital addressing has become a very common technology. In principle, modern digital technology provides some benefits with respect to analog addressing such as reduced interpixel cross-talk, lower power consumption and supply voltage, gray level scale repeatability, high programmability, and noise robustn...

  12. Crack tip dislocations revealed by electron tomography in silicon single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Masaki [Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan)], E-mail: masaki@zaiko.kyushu-u.ac.jp; Higashida, Kenji [Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Kaneko, Kenji [Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); JST-CREST, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Hata, Satoshi; Mitsuhara, Masatoshi [Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga koen, Kasuga, Fukuoka 816-8580 (Japan)

    2008-10-15

    Crack tip dislocations in silicon single crystals have been observed by a combination of annular dark-field scanning transmission electron microscopy and computed tomography. A series of images was acquired by maintaining the diffraction vector parallel to that of crack propagation to achieve sharp images of the dislocations. The observed dislocations were reconstructed by a filtered back-projection, and exhibited three-dimensional configurations of overlaid dislocations around the crack tip.

  13. Focused Ion Beam Milling Strategies of Photonic Crystal Structures in Silicon

    OpenAIRE

    Hopman, Wico C.L.; Ay, Feridun; Hu, Wenbin; Gadgil, Vishwas J.; Kuipers, Laurens; Pollnau, Markus; Ridder, De, Dirk

    2007-01-01

    We report on optimisation of the side wall angle of focused ion beam (FIB) fabricated submicron diameter holes in silicon. Two optimisation steps were performed. First, we compare two different FIB scanning procedures and show the advantages of using a spiral scanning method for the definition of holes in photonic crystal slab structures. Secondly, we investigate the effect on the geometry, of parameters for reducing the tapering effect. Furthermore, we report on the initial results regarding...

  14. Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots

    Science.gov (United States)

    Trempa, M.; Beier, M.; Reimann, C.; Roßhirth, K.; Friedrich, J.; Löbel, C.; Sylla, L.; Richter, T.

    2016-11-01

    In this work the dislocation formation in the seed crystal induced by feedstock indentation during the growth of quasimono (QM) silicon ingots for photovoltaic application was investigated. It could be shown by special laboratory indentation experiments that the formed dislocations propagate up to several millimeters deep into the volume of the seed crystal in dependence on the applied pressure of the feedstock particles on the surface of the seed crystal. Further, it was demonstrated that these dislocations if they were not back-melted during the seeding process grow further into the silicon ingot and drastically reduce its material quality. An estimation of the apparent pressure values in a G5 industrial crucible/feedstock setup reveals that the indentation phenomenon is a critical issue for the industrial production of QM silicon ingots. Therefore, some approaches to avoid/reduce the indentation events were tested with the result, that the most promising solution should be the usage of suitable feedstock particles as coverage of the seed.

  15. Silicon crystallization in nanodot arrays organized by block copolymer lithography

    Energy Technology Data Exchange (ETDEWEB)

    Perego, Michele, E-mail: michele.perego@mdm.imm.cnr.it; Andreozzi, Andrea; Seguini, Gabriele [IMM-CNR, Laboratorio MDM (Italy); Schamm-Chardon, Sylvie; Castro, Celia; BenAssayag, Gerard [Université de Toulouse, nMat Group, CEMES-CNRS (France)

    2014-12-15

    Asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers are used to fabricate nanoporous PS templates with different pore diameter depending on the specific substrate neutralization protocol. The resulting polymeric templates are used as masks for the subsequent deposition of a thin (h = 5 nm) amorphous Si layer by electron beam evaporation. After removal of the polymeric film and of the silicon excess, well-defined hexagonally packed amorphous Si nanodots are formed on the substrate. Their average diameter (d < 20 nm), density (1.2 × 10{sup 11} cm{sup −2}), and lateral distribution closely mimic the original nanoporous template. Upon capping with SiO{sub 2} and high temperature annealing (1050 °C, N{sub 2}), each amorphous Si nanodot rearranges in agglomerates of Si nanocrystals (d < 4 nm). The average diameter and shape of these Si nanocrystals strongly depend on the size of the initial Si nanodot.

  16. Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

    Science.gov (United States)

    Liu, Xin; Nakano, Satoshi; Kakimoto, Koichi

    2017-06-01

    Carbon (C) contamination in Czochralski silicon (CZ-Si) crystal growth mainly originates from carbon monoxide (CO) generation on the graphite components, which reaches a maximum during the melting stage. Loading a crucible with poly-Si feedstock includes many technical details for optimization of the melting and growth processes. To investigate the effect of the packing structure of Si chunks on C accumulation in CZ-Si crystal growth, transient global simulations of heat and mass transport were performed for the melting process with different packing structures of poly-Si. The heat transport modeling took into account the effective thermal conductivity (ETC) of the Si feedstock, which is affected by the packing structure. The effect of the chunk size on the melting process and C accumulation were investigated by parametric studies of different packing structures. The heat transport and melting process in the crucible were affected by the ETC and the emissivity of the Si feedstock. It was found that smaller Si chunks packed in the upper part could speed up the melting process and smooth the power profile. Decreasing the duration of the melting process is favorable for reduction of C contamination in the Si feedstock. Parametric studies indicated that optimization of the melting process by the packing structure is possible and essential for C reduction in CZ-Si crystal growth.

  17. Spherical silicon micromirrors bent by anodic bonding.

    Science.gov (United States)

    Wu, Tong; Yamasaki, Takahiro; Hokari, Ryohei; Hane, Kazuhiro

    2011-06-06

    We propose here a novel and stable method for fabricating spherical micromirror by bonding a flat freestanding single-crystal-silicon (SCS) membrane with a fulcrum on a glass substrate. Smooth convex spherical surface is achieved inside the fulcrum by the bending moment generated in the circumference of the SCS membrane. The surface profiles fit well with parabolic curves within 36nm RMS error indicating a good optical performance. By modifying the diameter of the fulcrum, we also demonstrate that it is possible to fabricate micromirrors with a wide range of focal length (0.4mm-1.6mm). The fabricated micromirrors are also used as the mold for replication of micro polymeric lenses. The surface profiles of the micromirrors are transferred to the polymeric replica with a high accuracy.

  18. A Hydrogen - Vacancy Defect In Single-Crystal Silicon

    Science.gov (United States)

    Melnikov, V. V.

    2016-09-01

    Results of a theoretical study of the interaction of interstitial molecular hydrogen with vacancies and the effect of generated defects on the structural and energy characteristics of the H2-Si system are considered. Within the framework of a 5D model it has been demonstrated that the decrease of system symmetry under transition to the crystal defect structure and the increase of the rotational barrier due to the strong interaction of the molecule with a vacancy lead to the significant restructuring of H2 energy spectrum. However, when the molecule is stable its rotational degrees of freedom remain active and H2 low-lying energy levels correspond to the definite values of the angular momentum.

  19. Enhancement of heat transfer in Czochralski growth of silicon crystals with a chemical cooling technique

    Science.gov (United States)

    Ding, Junling; Liu, Lijun; Zhao, Wenhan

    2017-06-01

    The cost of producing single-crystalline silicon with the Czochralski method can be reduced by promoting the crystal size and/or crystal pulling rate. However, more latent heat of solidification needs to be released from the melt-crystal (m-c) interface during the crystal growth process. In this study, the C-CO2 chemical endothermic reaction is proposed as a novel and efficient cooling technique to solve this problem. Compared with the conventional gas cooling method, C-CO2 endothermic reaction method can significantly enhance the heat transfer in the crystal at the m-c interface. It was found that the heat transfer is more enhanced with a chemical reaction of smaller activation energy, and the m-c interface becomes flatter. The influence of the carbon concentration in the chemical reactive gas flow on the heat removal in the crystal at the m-c interface is also investigated. The cooling effect is significantly increased with the increase in the carbon concentration when it is small. However, when the carbon concentration in the reactive gas is high, the cooling effect just increases slightly. The research demonstrates that the proposed chemical endothermic reaction is a promising cooling technique to be applied in CZ-Si crystal growth with large size/high pulling rate.

  20. Reflectivity calculated for a 3D silicon photonic band gap crystal with finite support

    CERN Document Server

    Devashish, D; van der Vegt, J J W; Vos, Willem L

    2016-01-01

    We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \\leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{\\'e}rot fringes related to standing waves in the finite crystal, as well as broad stop bands with nearly $100~\\%$ reflectivity, even for thin crystals. From the strong reflectivity peaks, it is inferred that the maximum reflectivity observed in experiments is not limited by finite size. The frequency ranges of the stop bands are in excellent agreement with stop gaps in the photonic band structure, that pertain to infinite and perfect crystals. ...

  1. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  2. Characterization studies of Silicon Photomultipliers and crystals matrices for a novel time of flight PET detector

    CERN Document Server

    Auffray, Etiennette; Cortinovis, Daniele; Doroud, Katayoun; Garutti, Erika; Lecoq, Paul; Liu, Zheng; Martinez, Rosana; Paganoni, Marco; Pizzichemi, Marco; Silenzi, Alessandro; Xu, Chen; Zvolský, Milan

    2015-01-01

    This paper describes the characterization of crystal matrices and silicon photomultiplier arrays for a novel Positron Emission Tomography (PET) detector, namely the external plate of the EndoTOFPET-US system. The EndoTOFPET-US collaboration aims to integrate Time-Of-Flight PET with ultrasound endoscopy in a novel multimodal device, capable to support the development of new biomarkers for prostate and pancreatic tumors. The detector consists in two parts: a PET head mounted on an ultrasound probe and an external PET plate. The challenging goal of 1 mm spatial resolution for the PET image requires a detector with small crystal size, and therefore high channel density: 4096 LYSO crystals individually readout by Silicon Photomultipliers (SiPM) make up the external plate. The quality and properties of these components must be assessed before the assembly. The dark count rate, gain, breakdown voltage and correlated noise of the SiPMs are measured, while the LYSO crystals are evaluated in terms of light yield and en...

  3. Study on SCS-6/Ti-6AI-4V Composite

    Institute of Scientific and Technical Information of China (English)

    ZENG Li-ying; ZHAO Yong-qing; ZHOU Lian; Vassel Alain

    2004-01-01

    Fiber reinforced titanium matrix composite is considered as a superior material for advanced lightweight aerospace application. Fiber/matrix interfacial reaction has a significant effect on the mechanical properties of the composites. The SCS-6 SiC fiber reinforced Ti-6Al-4V matrix composite was prepared by foil-fiber-foil (FFF) method at ONERA, France. Stripe samples were cut from the as-consolidated composites and sealed in silicon carbide tube. One group of the samples were annealed for 58h at 550℃, 700℃, 850℃ and 1000℃, the other group were annealed at 1000℃for 43h, 58h, 80h, 100h, respectively. The interface investigation indicated that the connection between SiC fiber and the matrix is favorite in the composite. And the interface width for as-consolidated composite is only about 0.8μm. The interface width increase with the prolong of annealing time and the increase of annealing temperature. But the increment for the latter is not as high as the former one, which means the annealing time may be the prior factor to influence the interface reaction. The interface width for the composite annealed at 1000℃ for 100h is about 20μm. Interface composition of the composite detected by EDX is as follows: Ti 87.58 wt %, V 4.91 wt %, Al 4.06wt%, Si 3.45 wt %.

  4. Structure Dependence of Mode Edges in Photonic Crystal Waveguide with Silicon on Insulator

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and the two-dimensional plane wave expansion method.The variations of waveguide-mode edges with the structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constant, r/Λ, is fixed and the lattice constant of photonic crystal,Λ, increases, the waveguide-mode edges shift to longer wavelengths. When Λ is fixed and r/Λ increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Λ and Λ are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

  5. A new cell-selective three-dimensional microincubator based on silicon photonic crystals.

    Directory of Open Access Journals (Sweden)

    Francesca Carpignano

    Full Text Available In this work, we show that vertical, high aspect-ratio (HAR photonic crystals (PhCs, consisting of periodic arrays of 5 µm wide gaps with depth of 50 µm separated by 3 µm thick silicon walls, fabricated by electrochemical micromachining, can be used as three-dimensional microincubators, allowing cell lines to be selectively grown into the gaps. Silicon micromachined dice incorporating regions with different surface profiles, namely flat silicon and deeply etched PhC, were used as microincubators for culturing adherent cell lines with different morphology and adhesion properties. We extensively investigated and compared the proliferative behavior on HAR PhCs of eight human cell models, with different origins, such as the epithelial (SW613-B3; HeLa; SW480; HCT116; HT29 and the mesenchymal (MRC-5V1; CF; HT1080. We also verified the contribution of cell sedimentation into the silicon gaps. Fluorescence microscopy analysis highlights that only cell lines that exhibit, in the tested culture condition, the behavior typical of the mesenchymal phenotype are able to penetrate into the gaps of the PhC, extending their body deeply in the narrow gaps between adjacent silicon walls, and to grow adherent to the vertical surfaces of silicon. Results reported in this work, confirmed in various experiments, strongly support our statement that such three-dimensional microstructures have selection capabilities with regard to the cell lines that can actively populate the narrow gaps. Cells with a mesenchymal phenotype could be exploited in the next future as bioreceptors, in combination with HAR PhC optical transducers, e.g., for label-free optical detection of cellular activities involving changes in cell adhesion and/or morphology (e.g., apoptosis in a three-dimensional microenvironment.

  6. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  7. Crystallization of silicon dioxide and compositional evolution of the Earth's core.

    Science.gov (United States)

    Hirose, Kei; Morard, Guillaume; Sinmyo, Ryosuke; Umemoto, Koichio; Hernlund, John; Helffrich, George; Labrosse, Stéphane

    2017-03-02

    The Earth's core is about ten per cent less dense than pure iron (Fe), suggesting that it contains light elements as well as iron. Modelling of core formation at high pressure (around 40-60 gigapascals) and high temperature (about 3,500 kelvin) in a deep magma ocean predicts that both silicon (Si) and oxygen (O) are among the impurities in the liquid outer core. However, only the binary systems Fe-Si and Fe-O have been studied in detail at high pressures, and little is known about the compositional evolution of the Fe-Si-O ternary alloy under core conditions. Here we performed melting experiments on liquid Fe-Si-O alloy at core pressures in a laser-heated diamond-anvil cell. Our results demonstrate that the liquidus field of silicon dioxide (SiO2) is unexpectedly wide at the iron-rich portion of the Fe-Si-O ternary, such that an initial Fe-Si-O core crystallizes SiO2 as it cools. If crystallization proceeds on top of the core, the buoyancy released should have been more than sufficient to power core convection and a dynamo, in spite of high thermal conductivity, from as early on as the Hadean eon. SiO2 saturation also sets limits on silicon and oxygen concentrations in the present-day outer core.

  8. 11% efficient single-crystal solar cells and 10% efficient polycrystalline cells made from refined metallurgical silicon

    Science.gov (United States)

    Hanoka, J. I.; Strock, H. B.; Kotval, P. S.

    1981-09-01

    The performances of single-crystal and polycrystalline solar cells fabricated from a refined form of low-cost metallurgical silicon are presented. Czochralski-pulled single crystal and cast polycrystalline silicon solar cells with an n on p structure were made from metallurgical silicon processed by Al dissolution followed by Al removal through slagging and directional solidification to obtain material purities in the fractional ppm by weight range. For the single-crystal cells, measurements reveal AM1 efficiencies up to 11.1%, open circuit voltages up to 596 mV and fill factors up to 81%. The cast polycrystalline substrates have yielded cells with efficiencies up to 10.1%, fill factors of 79% and open circuit voltages of 585 mV. The low short circuit current densities are attributed to impurities in the base region in the single-crystal cell, and to grain boundary segregation of impurities and grain boundary recombination in the polycrystalline cells.

  9. Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

    CERN Document Server

    Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

    2013-01-01

    Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

  10. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    Science.gov (United States)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  11. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    Directory of Open Access Journals (Sweden)

    R. Černý

    2000-01-01

    Full Text Available An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.

  12. Degenerate photon-pair generation in an ultracompact silicon photonic crystal waveguide.

    Science.gov (United States)

    He, Jiakun; Clark, Alex S; Collins, Matthew J; Li, Juntao; Krauss, Thomas F; Eggleton, Benjamin J; Xiong, Chunle

    2014-06-15

    We demonstrate degenerate, correlated photon-pair generation via slow-light-enhanced spontaneous four-wave mixing in a 96 μm long silicon photonic crystal waveguide. Our device represents a more than 50 times smaller footprint than silicon nanowires. We have achieved a coincidence-to-accidental ratio as high as 47 at a photon generation rate of 0.001 pairs per pulse and 14 at a photon generation rate of 0.023 pairs per pulse, which are both higher than the useful level of 10. This demonstration provides a path to generate indistinguishable photons in an ultracompact platform for future quantum photonic technologies.

  13. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    Science.gov (United States)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  14. Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

    Science.gov (United States)

    Haschke, Jan; Amkreutz, Daniel; Rech, Bernd

    2016-04-01

    Liquid phase crystallization has emerged as a novel approach to grow large grained polycrystalline silicon films on glass with high electronic quality. In recent years a lot of effort was conducted by different groups to determine and optimize suitable interlayer materials, enhance the crystallographic quality or to improve post crystallization treatments. In this paper, we give an overview on liquid phase crystallization and describe the necessary process steps and discuss their influence on the absorber properties. Available line sources are compared and different interlayer configurations are presented. Furthermore, we present one-dimensional numerical simulations of a rear junction device, considering silicon absorber thicknesses between 1 and 500 µm. We vary the front surface recombination velocity as well as doping density and minority carrier lifetime in the absorber. The simulations suggest that a higher absorber doping density is beneficial for layer thicknesses below 20 µm or when the minority carrier lifetime is short. Finally, we discuss possible routes for device optimization and propose a hybride cell structure to circumvent current limitations in device design.

  15. Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

    Graphene is a perspective material platform for the infrared (from far-IR to near-IR) optoelectronics due to possibility of extremely confined surface plasmons polaritons excitation at long wavelengths, and large (for atomically thin layer) optical absorbance of 2.3% in the short wavelengths rang...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors.......Graphene is a perspective material platform for the infrared (from far-IR to near-IR) optoelectronics due to possibility of extremely confined surface plasmons polaritons excitation at long wavelengths, and large (for atomically thin layer) optical absorbance of 2.3% in the short wavelengths ranges....... Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...

  16. Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

    Institute of Scientific and Technical Information of China (English)

    CHEN San; QIAN Bo; WEI Jun-Wei; CHEN Kun-Ji; XU Jun; LI Wei; HUANG Xin-Fan

    2005-01-01

    @@ Photoluminescence (PL) from one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavities are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx :H/aSiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNz :H) thin film.By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNz:H. A linewidth of △λ = 11 nm and a quality factor of Q = 69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710 nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.

  17. Transverse wave propagation in [ab0] direction of silicon single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Sang Jin; Kim, Hye Jeong; Kwon, Se Ho; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan(Korea, Republic of)

    2015-12-15

    The speed and oscillation directions of elastic waves propagating in the [ab0] direction of a silicon single crystal were obtained by solving Christoffel's equation. It was found that the quasi waves propagate in the off-principal axis, and hence, the directions of the phase and group velocities are not the same. The maximum deviation of the two directions was 7.2 degree angle. Two modes of the pure transverse waves propagate in the [110] direction with different speeds, and hence, two peaks were observed in the pulse echo signal. The amplitude ratio of the two peaks was dependent on the initial oscillating direction of the incident wave. The pure and quasi-transverse waves propagate in the [210] direction, and the oscillation directions of these waves are perpendicular to each other. The skewing angle of the quasi wave was calculated as 7.14 degree angle, and it was measured as 9.76 degree angle. The amplitude decomposition in the [210] direction was similar to that in the [110] direction, since the oscillation directions of these waves are perpendicular to each other. These results offer useful information in measuring the crystal orientation of the silicon single crystal.

  18. Label-free optical detection of bacteria on a 1-D photonic crystal of porous silicon

    Science.gov (United States)

    Wu, Chia-Chen; Alvarez, Sara D.; Rang, Camilla U.; Chao, Lin; Sailor, Michael J.

    2009-02-01

    The construction of a specific, label-free, bacteria biosensor using porous silicon 1-D photonic crystals will be described. Bacteria resident on the surface of porous silicon act as scattering centers for light resonant with the photonic crystal; the diffusely scattered light possesses the optical spectrum of the underlying photonic crystal. Using a spectrometer fitted to a light microscope, the bacteria are imaged without using exogenous dyes or labels and are quantified by measuring the intensity of scattered light. In order to selectively bind and identify bacteria using porous Si, we use surface modifications to reduce nonspecific binding to the surface and to engineer bacteria specificity onto the surface. Bovine serum albumin (BSA) was adsorbed to the porous Si surface to reduce nonspecific binding of bacteria. The coatings were then chemically activated to immobilize polyclonal antibodies specific to Escherichia coli. Two E. coli strains were used in our study, E. coli DH5α and non-pathogenic enterohemorrhagic Escherichia coli (EHEC) strain. The nonpathogenic Vibrio cholerae O1 strain was used to test for antibody specificity. Successful attachment of antibodies was measured using fluorescence microscopy and the scattering method was used to test for bacteria binding specificity.

  19. Location control of crystal grains in excimer laser crystallization of silicon thin films

    Science.gov (United States)

    Kumomi, Hideya

    2003-07-01

    Location of crystal grains in polycrystalline Si thin films formed by excimer-laser crystallization is controlled by manipulating the superlateral-growth phenomenon. The superlateral growth of a single grain occurs preferentially at an artificial site where nanometer-sized crystallites are embedded in the precursory amorphous thin films. Only a part of the crystallites embedded in the site could survive the melting and grow to serve as the seed crystal in the subsequent recrystallization. Such grain-location control provides a basis for two-dimensional control of the grain-boundary location in low-temperature polycrystalline Si thin films, which is essential to the device-to-device uniformity of high-performance thin-film transistors.

  20. Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Wern-Dare Jheng

    2012-01-01

    Full Text Available This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

  1. A topological analysis of charge densities in diamond, silicon and germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Abramov, Yu.A. [National Inst. for Research in Inorganic Materials, Tsukuba, Ibaraki (Japan); Okamura, F.P. [National Inst. for Research in Inorganic Materials, Tsukuba, Ibaraki (Japan)

    1997-03-01

    The Hansen-Coppens multipole model of charge density has been fitted to highly accurate published experimental and theoretical structure factors for diamond, silicon and germanium crystals. Analysis of both model experimental and theoretical charge densities using the resulting model parameters was performed in terms of Bader`s topological theory. The general topology of the charge density appeared to be identical for all crystals, containing the four possible types of critical points of rank three, and no non-nuclear attractors between neighboring atoms were found within achieved accuracy. Theoretical and experimental values of charge density and its Laplacian show quantitative and semiquantitative agreement, respectively, at the critical points of model charge densities. For Ge crystals, such agreement is worse at the ring critical point. These results suggest the possibility of semiquantitative (within 10-30%) study of the topological characteristics of highly accurate X-ray charge densities of crystals displaying shared interatomic interactions. Comparative topological analysis of the chemical bond in this series of crystals is discussed in terms of the quantum topological theory. (orig.).

  2. Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities

    CERN Document Server

    Gong, Yiyang; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Negro, Luca Dal; Vuckovic, Jelena

    2010-01-01

    One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  3. Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide.

    Science.gov (United States)

    Xiong, C; Monat, Christelle; Clark, Alex S; Grillet, Christian; Marshall, Graham D; Steel, M J; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Rarity, John G; Eggleton, Benjamin J

    2011-09-01

    We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

  4. About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

    Directory of Open Access Journals (Sweden)

    B.V. Pavlyk

    2015-10-01

    Full Text Available The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111. It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

  5. Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent light

    Science.gov (United States)

    Nylandsted Larsen, A.; Borisenko, V. E.

    1984-01-01

    The behaviour of ion-implanted arsenic in -oriented silicon single crystals exposed to continuous incoherent light from a xenon arc lamp has been analyzed with sheet resistivity measurements, Rutherford backscattering spectrometry, and ion channeling including angular scans. Redistribution, substitutionality, and electrical activity of arsenic were followed as functions of exposure time (6 20s) and induced temperature (1000° 1100°C). Redistribution was observed for implanted concentrations exceeding ˜4×1020 at.%/cm3. High substitutional fractions, between 95% and 99%, and low sheet resistivities were found for all annealed samples. Formation mechanism of arsenic substitutional solid solutions during transient heating of implanted layers is discussed.

  6. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    Science.gov (United States)

    Yang, Ming-Jay; Lin, Chun-Chi; Wu, Yu-Shu; Wang, Likarn; Na, Neil

    2017-03-01

    We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  7. Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com [Moscow State University, Physics Faculty (Russian Federation); Musabek, G. K.; Taurbayev, T. I. [Al Farabi Kazakh National University, Physics Department (Kazakhstan); Timoshenko, V. Yu. [Moscow State University, Physics Faculty (Russian Federation)

    2011-05-15

    In porous-silicon-based multilayered structures that exhibit the properties of one-dimensional photonic crystals, an increase in the photoluminescence and Raman scattering intensities is observed upon optical excitation at the wavelength 1.064 {mu}m. When the excitation wavelength falls within the edge of the photonic band gap of the structures, a multiple increase (by a factor larger than 400) in the efficiency of Raman scattering is detected. The effect is attributed to partial localization of excitation light and, correspondingly, to the much longer time of interaction of light with the material in the structures.

  8. Modeling of nucleation and evolution of hydrogen-induced platelets in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Velichko, Oleg; Shaman, Yury [Belarusian State University of Informatics and Radioelectronics, Minsk (Belarus); Fedotov, Alexander [Belarusian State University, Minsk (Belarus)

    2009-08-15

    A model for nucleation and evolution of hydrogen induced platelets (HIPs) in silicon crystals during plasma treatment is proposed and analyzed. The derived equations allow one to trace the evolution of the concentration distribution for platelets depending on their size and to calculate the total concentration of hydrogen trapped by HIPs. The results of numerical simulation agree well with the available experimental data confirming the validity of the assumptions made to develop the model. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Fundamentals of phase-only liquid crystal on silicon (LCOS) devices

    OpenAIRE

    Zhang, Zichen; You, Zheng; Chu, DaPing

    2014-01-01

    This is the final version. It has been published by NPG in Light: Science & Applications here: http://www.nature.com/lsa/journal/v3/n10/full/lsa201494a.html. This paper describes the fundamentals of phase-only liquid crystal on silicon (LCOS) technology, which have not been previously discussed in detail. This technology is widely utilized in high efficiency applications for real-time holography and diffractive optics. The paper begins with a brief introduction on the developmental traject...

  10. Kinetics of the laser-induced solid phase crystallization of amorphous silicon-Time-resolved Raman spectroscopy and computer simulations

    Science.gov (United States)

    Očenášek, J.; Novák, P.; Prušáková, L.

    2017-01-01

    This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

  11. The x-ray reflection efficiencies of planes (III) in germanium silicon and fluorite analyzing crystals. Experimental data

    Energy Technology Data Exchange (ETDEWEB)

    Bermudez Polonio, J.

    1964-07-01

    Integrated and peak reflection efficiency curves relative to a LiF crystal are presented. K{sub {alpha}} fluorescent radiations between (22) Ti and (41) Nb were used for both germanium and silicon crystals: the interval was extended to CaK{sub {alpha}} radiation in the short wavelength region with the fluorite crystal. Reflection efficiency curves show sharp declines in the region around the K absorption edges of germanium and calcium. For CuK{sub {alpha}} radiation, the experimental reflection efficiencies at the peak for germanium, silicon and fluorite crystals are 52, 38.5 and 17 percent, whereas the integrated reflection efficiencies are 65.5, 38 and 14 percent respectively. The data were obtained from untreated crystals, using a standard Norelco non-focussing X-ray spectrometer. Experimental procedures are presented. Some considerations about the (222) missing reflections are made. (Author) 12 refs.

  12. Manufacturing and characterization of bent silicon crystals for studies of coherent interactions with negatively charged particles beams

    Energy Technology Data Exchange (ETDEWEB)

    Germogli, G.; Mazzolari, A.; Bandiera, L.; Bagli, E.; Guidi, V.

    2015-07-15

    Efficient steering of GeV-energy negatively charged particle beams was demonstrated to be possible with a new generation of thin bent silicon crystals. Suitable crystals were produced at the Sensor Semiconductor Laboratory of Ferrara starting from Silicon On Insulator wafers, adopting proper revisitation of silicon micromachining techniques such as Low Pressure Chemical Vapor Deposition, photolithography and anisotropic chemical etching. Mechanical holders, which allow to properly bend the crystal and to reduce unwanted torsions, were employed. Crystallographic directions and crystal holder design were optimized in order to excite quasi-mosaic effect along (1 1 1) planes. Prior to exposing the crystal to particle beams, a full set of characterizations were performed. Infrared interferometry was used to measure crystal thickness with high accuracy. White-light interferometry was employed to characterize surface deformational state and its torsion. High-resolution X-rays diffraction was used to precisely measure crystal bending angle along the beam. Manufactured crystals were installed and tested at the MAMI MAinz MIcrotron to steer sub-GeV electrons, and at SLAC to deflect an electron beam in the 1 to 10 GeV energy range.

  13. Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates

    Science.gov (United States)

    Yuan, Hao-Chih; Qin, Guoxuan; Celler, George K.; Ma, Zhenqiang

    2009-07-01

    This letter presents realization of bendable rf switches operating at microwave frequencies formed with single-crystal Si nanomembranes (SiNMs) on a plastic substrate. Selectively doped 200-nm-thick SiNM is lifted off from silicon-on-insulator and transferred to a polymer substrate to form lateral P-intrinsic-N (PIN) diodes with minimized parasitic resistances. A single-pole single-throw switch, consisting of two PIN diodes connected in a shunt-series configuration, demonstrated very low insertion loss and high isolation from dc up to 20 GHz. The level of performance indicates a promise of properly processed single-crystal semiconductor nanomembranes for high-frequency applications in a number of consumer and military systems.

  14. Integration of self-assembled three-dimensional photonic crystals onto structured silicon wafers.

    Science.gov (United States)

    Ye, Jianhui; Zentel, Rudolf; Arpiainen, Sanna; Ahopelto, Jouni; Jonsson, Fredrik; Romanov, Sergei G; Sotomayor Torres, Clivia M

    2006-08-15

    We report on the fabrication of high-quality opaline photonic crystals from large silica spheres (diameter of 890 nm), self-assembled in hydrophilic trenches of silicon wafers by using a novel technique coined a combination of "lifting and stirring". The achievements reported here comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, a filling of the trenches up to the top, leading to a spatially uniform film thickness, particularly an absence of cracks within the size of the trenches, and finally a good 3D order of the opal lattice even in trenches with a complex confined geometry, verified using optical measurements. The opal lattice was found to match the pattern precisely in width as well as depth, providing an important step toward applications of opals in integrated optics.

  15. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

    Science.gov (United States)

    Wistisen, T. N.; Uggerhøj, U. I.; Wienands, U.; Markiewicz, T. W.; Noble, R. J.; Benson, B. C.; Smith, T.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Holtzapple, R.; Tucker, S.

    2016-07-01

    We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

  16. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Dan, E-mail: liudanhu725@126.com [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Hu, Sen [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Gao, Yihua [Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

    2017-07-12

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%. - Highlights: • Photonic crystal heterojunction with circular and square scatterers is first studied. • One-way transmission efficiency is closely related to the hetero-interface. • Wide-band and efficient one-way transmission is realized.

  17. Floating Silicon Method single crystal ribbon - observations and proposed limit cycle theory

    Science.gov (United States)

    Kellerman, Peter; Kernan, Brian; Helenbrook, Brian T.; Sun, Dawei; Sinclair, Frank; Carlson, Frederick

    2016-10-01

    In the Floating Silicon Method (FSM), a single-crystal Si ribbon is grown while floating on the surface of a Si melt. In this paper, we describe the phenomenology of FSM, including the observation of approximately regularly spaced "facet lines" on the ribbon surface whose orientation aligns with (111) crystal planes. Sb demarcation experiments sectioned through the thickness of the ribbon reveal that the solid/melt interface consists of dual (111) planes and that the leading edge facet growth is saccadic in nature, rather than steady-state. To explain this behavior, we propose a heuristic solidification limit cycle theory, using a continuum level of description with anisotropic kinetics as developed by others, and generalizing the interface kinetics to include a roughening transition as well as a re-faceting mechanism that involves curvature and the Gibbs-Thomson effect.

  18. Mathematical modelling of the feed rod shape in floating zone silicon crystal growth

    Science.gov (United States)

    Plāte, M.; Krauze, A.; Virbulis, J.

    2017-01-01

    A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution of the asymmetric feed rod shape. The feed rod rotation is shown to have a smoothing effect on the shape of the open melting front.

  19. Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

    Science.gov (United States)

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu; Gao, Yuanfang; Apperson, Steve; Shende, Rajesh; Guha, Suchi; Arif, Mohammad; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra

    2007-03-01

    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250°C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO /Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.

  20. Elemental characterization of the Avogadro silicon crystal WASO 04 by neutron activation analysis

    CERN Document Server

    D'Agostino, Giancarlo; Giordani, Laura; Mana, Giovanni; Massa, Enrico; Oddone, Massimo; 10.1088/0026-1394/49/6/696

    2013-01-01

    Analytical measurements of the 28Si crystal used for the determination of the Avogadro constant are essential to prevent biased results or under-estimated uncertainties. A review of the existing data confirms the high-purity of silicon with respect to a large number of elements. In order to obtain a direct evidence of purity, we developed a relative analytical method based on neutron activation. As a preliminary test, this method was applied to a sample of the Avogadro crystal WASO 04. The investigation concerned twenty-nine elements. The mass fraction of Au was quantified to be 1.03(18) x 10-12. For the remaining twenty-eight elements, the mass fractions are below the detection limits, which range between 1 x 10-12 and 1 x 10-5.

  1. Channeling, volume reflection and gamma emission using 14GeV electrons in bent silicon crystals - Oral presentation

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Brandon [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-23

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  2. Modulation of quantum dot photoluminescence in porous silicon photonic crystals as a function of the depth of their penetration

    Science.gov (United States)

    Dovzhenko, Dmitriy S.; Martynov, Igor L.; Samokhvalov, Pavel S.; Mochalov, Konstantin E.; Chistyakov, Alexander A.; Nabiev, Igor

    2016-04-01

    Photonic crystals doped with fluorescent nanoparticles offer a plenty of interesting applications in photonics, laser physics, and biosensing. Understanding of the mechanisms and effects of modulation of the photoluminescent properties of photonic crystals by varying the depth of nanoparticle penetration should promote targeted development of nanocrystal-doped photonic crystals with desired optical and morphological properties. Here, we have investigated the penetration of semiconductor quantum dots (QDs) into porous silicon photonic crystals and performed experimental analysis and theoretical modeling of the effects of the depth of nanoparticle penetration on the photoluminescent properties of this photonic system. For this purpose, we fabricated porous silicon microcavities with an eigenmode width not exceeding 10 nm at a wavelength of 620 nm. CdSe/CdS/ZnS QDs fluorescing at 617 nm with a quantum yield of about 70% and a width at half-height of about 40 nm were used in the study. Confocal microscopy and scanning electron microscopy were used to estimate the depth of penetration of QDs into the porous silicon structure; the photoluminescence spectra, kinetics, and angular fluorescence distribution were also analyzed. Enhancement of QD photoluminescence at the microcavity eigenmode wavelength was observed. Theoretical modeling of porous silicon photonic crystals doped with QDs was performed using the finite-difference time-domain (FDTD) approach. Theoretical modeling has predicted, and the experiments have confirmed, that even a very limited depth of nanoparticle penetration into photonic crystals, not exceeding the first Bragg mirror of the microcavity, leads to significant changes in the QD luminescence spectrum determined by the modulation of the local density of photonic states in the microcavity. At the same time, complete and uniform filling of a photonic crystal with nanoparticles does not enhance this effect, which is as strong as in the case of a very

  3. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

    2014-08-15

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  4. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

  5. The influence of shear-velocity heterogeneity on ScS2/ScS amplitude ratios and estimates of Q in the mantle

    Science.gov (United States)

    Chaves, Carlos A. M.; Ritsema, Jeroen

    2016-08-01

    Regional waveforms of deep-focus Tonga-Fiji earthquakes indicate anomalous traveltime differences (ScS2-ScS) and amplitude ratios (ScS2/ScS) of the phases ScS and ScS2. The correlation between the ScS2-ScS delay time and the ScS2/ScS amplitude ratio suggests that shear wave apparent Q in the mantle below the Tonga-Fiji region is highest when shear wave velocities are lowest. This observation is unexpected if temperature variations were responsible for the seismic anomalies. Using spectral element method waveform simulations for four tomographic models, we demonstrate that focusing and scattering of shear waves by long-wavelength 3-D heterogeneity in the mantle may overwhelm the signal from intrinsic attenuation in long-period ScS2/ScS amplitude ratios. The tomographic models reproduce the trends in recorded ScS2-ScS difference times and ScS2/ScS amplitude ratios. Although they cannot be ruled out, variations in shear wave attenuation (i.e., the quality factor Q) are not necessary to explain the data.

  6. Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

    Directory of Open Access Journals (Sweden)

    Callum G. Littlejohns

    2016-01-01

    Full Text Available The realisation of high quality silicon-germanium-on-insulator (SGOI is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

  7. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  8. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices.

    Science.gov (United States)

    Frewin, Christopher L; Locke, Christopher; Saddow, Stephen E; Weeber, Edwin J

    2011-01-01

    Single crystal silicon carbide (SiC) is a wide band-gap semiconductor which has shown both bio- and hemo-compatibility [1-5]. Although single crystalline SiC has appealing bio-sensing potential, the material has not been extensively characterized. Cubic silicon carbide (3C-SiC) has superior in vitro biocompatibility compared to its hexagonal counterparts [3, 5]. Brain machine interface (BMI) systems using implantable neuronal prosthetics offer the possibility of bi-directional signaling, which allow sensory feedback and closed loop control. Existing implantable neural interfaces have limited long-term reliability, and 3C-SiC may be a material that may improve that reliability. In the present study, we investigated in vivo 3C-SiC biocompatibility in the CNS of C56BL/6 mice. 3C-SiC was compared against the known immunoreactive response of silicon (Si) at 5, 10, and 35 days. The material was examined to detect CD45, a protein tyrosine phosphatase (PTP) expressed by activated microglia and macrophages. The 3C-SiC surface revealed limited immunoresponse and significantly reduced microglia compared to Si substrate.

  9. One-dimensional photonic crystal slot waveguide for silicon-organic hybrid electro-optic modulators.

    Science.gov (United States)

    Yan, Hai; Xu, Xiaochuan; Chung, Chi-Jui; Subbaraman, Harish; Pan, Zeyu; Chakravarty, Swapnajit; Chen, Ray T

    2016-12-01

    In an on-chip silicon-organic hybrid electro-optic (EO) modulator, the mode overlap with EO materials, in-device effective r33, and propagation loss are among the most critical factors that determine the performance of the modulator. Various waveguide structures have been proposed to optimize these factors, yet there is a lack of comprehensive consideration on all of them. In this Letter, a one-dimensional (1D) photonic crystal (PC) slot waveguide structure is proposed that takes all these factors into consideration. The proposed structure takes advantage of the strong mode confinement within a low-index region in a conventional slot waveguide and the slow-light enhancement from the 1D PC structure. Its simple geometry makes it robust to resist fabrication imperfections and helps reduce the propagation loss. Using it as a phase shifter in a Mach-Zehnder interferometer structure, an integrated silicon-organic hybrid EO modulator was experimentally demonstrated. The observed effective EO coefficient is as high as 490 pm/V. The measured half-wave voltage and length product is less than 1  V·cm and can be further improved. A potential bandwidth of 61 GHz can be achieved and further improved by tailoring the doping profile. The proposed structure offers a competitive novel phase-shifter design, which is simple, highly efficient, and with low optical loss, for on-chip silicon-organic hybrid EO modulators.

  10. Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2016-01-01

    Full Text Available We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

  11. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    Energy Technology Data Exchange (ETDEWEB)

    Emanuel Sachs

    2013-01-16

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the

  12. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon.

    Science.gov (United States)

    Huang, Hu; Zhao, Hongwei; Shi, Chengli; Zhang, Lin; Wan, Shunguang; Geng, Chunyang

    2013-04-12

    Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN.

  13. Polarization Beam Splitter Based on a Self-Collimation Michelson Interferometer in a Silicon Photonic Crystal

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-Yao; LIN Gui-Min; LI Jun-Jun; XU Xiao-Fu; JIANG Jun-Zhen; QIANG Ze-Xuan; QIU Yi-Shen; LI Hui

    2012-01-01

    A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated.Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method,the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure.Based on its novel polarization beam splitting mechanics,the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB,respectively.Since its dimensions are only several operating wavelengths,the PBS may have practical applications in photonic integrated circuits.%A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated. Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method, the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure. Based on its novel polarization beam splitting mechanics, the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB, respectively. Since its dimensions are only several operating wavelengths, the PBS may have practical applications in photonic integrated circuits.

  14. Precision Control of Thermal Transport in Cryogenic Single-Crystal Silicon Devices

    Science.gov (United States)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-01-01

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than, even when the surface is fairly smooth, 510 nm rms, and the peak thermal wavelength is 0.6 microns. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of +/-8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  15. Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically enriched silicon-28 crystal.

    Science.gov (United States)

    Gumann, P; Patange, O; Ramanathan, C; Haas, H; Moussa, O; Thewalt, M L W; Riemann, H; Abrosimov, N V; Becker, P; Pohl, H-J; Itoh, K M; Cory, D G

    2014-12-31

    We experimentally demonstrate the first inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5×10(15)  cm(-3), 3 orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1  cm(3) sample (≈10(15) spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of ∼64%. The (31)P-T2 measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T1 of the (31)P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a time scale of 4.5 h. Optical excitation was performed with a 1047 nm laser, which provided above-band-gap excitation of the silicon. The buildup of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the buildup at 1.7 K showed biexponential behavior with characteristic time constants of 578 and 5670 s.

  16. Slow-light-enhanced energy efficiency for the graphene microheater on silicon photonic crystal waveguides

    CERN Document Server

    Yan, Siqi; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N Asger; Dong, Jianji; Ding, Yunhong

    2016-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions, and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene microheater on a slow-light silicon photonic crystal waveguide, we experimentally demonstrated an energy-efficient graphene microheater with a tuning efficiency of 1.07 nm/mW and power consumption per free spectral range of 3.99 mW. The rise and decay times (10% to 90%) were only 750 ns and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding record-low figure of merit of the device was 2.543 nW.s, which is one order of magnitude lower than results reported in previous studies. The influences of the graphene-photonic crystal waveguide interaction length and the shape of the graphene heater were also investigated, providing valuable guidelines for enhancing the graphene microheater tuning efficiency.

  17. Optimization of plasma parameters for the production of silicon nano-crystals

    CERN Document Server

    Chaabane, N; Vach, H; Cabarrocas, P R I

    2003-01-01

    We use silane-hydrogen plasmas to synthesize silicon nano-crystals in the gas phase and thermophoresis to collect them onto a cooled substrate. To distinguish between nano-crystals formed in the plasma and those grown on the substrate, as a result of surface and subsurface reactions, we have simultaneously deposited films on a conventional substrate heated at 250 deg. C and on a second substrate cooled down to 90 deg. C. A series of samples deposited at various discharge pressures, in the range of 400 mTorr to 1.2 Torr, have been characterized by Raman spectroscopy and ellipsometry. At low pressure (400-500 mTorr), the films are amorphous on the cold substrate and micro-crystalline on the hot one. As pressure increases, gas phase reactions lead to the formation of nano-crystalline particles which are attracted by the cold substrate due to thermophoresis. Consequently, we obtain nano-crystalline silicon thin films on the cold substrate and amorphous thin films on the heated one in the pressure range of 600-900...

  18. Precision control of thermal transport in cryogenic single-crystal silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Rostem, K., E-mail: karwan.rostem@nasa.gov [Department of Physics and Astronomy, The Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218 (United States); NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, Maryland 20771 (United States); Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J. [NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, Maryland 20771 (United States)

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path ℓ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ℓ, even when the surface is fairly smooth, 5–10 nm rms, and the peak thermal wavelength is 0.6 μm. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ℓ, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of ±8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  19. SEM-induced shrinkage and site-selective modification of single-crystal silicon nanopores

    Science.gov (United States)

    Chen, Qi; Wang, Yifan; Deng, Tao; Liu, Zewen

    2017-07-01

    Solid-state nanopores with feature sizes around 5 nm play a critical role in bio-sensing fields, especially in single molecule detection and sequencing of DNA, RNA and proteins. In this paper we present a systematic study on shrinkage and site-selective modification of single-crystal silicon nanopores with a conventional scanning electron microscope (SEM). Square nanopores with measurable sizes as small as 8 nm × 8 nm and rectangle nanopores with feature sizes (the smaller one between length and width) down to 5 nm have been obtained, using the SEM-induced shrinkage technique. The analysis of energy dispersive x-ray spectroscopy and the recovery of the pore size and morphology reveal that the grown material along with the edge of the nanopore is the result of deposition of hydrocarbon compounds, without structural damage during the shrinking process. A simplified model for pore shrinkage has been developed based on observation of the cross-sectional morphology of the shrunk nanopore. The main factors impacting on the task of controllably shrinking the nanopores, such as the accelerating voltage, spot size, scanned area of e-beam, and the initial pore size have been discussed. It is found that single-crystal silicon nanopores shrink linearly with time under localized irradiation by SEM e-beam in all cases, and the pore shrinkage rate is inversely proportional to the initial equivalent diameter of the pore under the same e-beam conditions.

  20. High-efficiency deflection of high energy protons due to channeling along the axis of a bent silicon crystal

    Science.gov (United States)

    Scandale, W.; Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Masi, A.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Smirnov, G.; Breton, D.; Burmistrov, L.; Chaumat, V.; Dubos, S.; Maalmi, J.; Puill, V.; Stocchi, A.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Dabagov, S.; Murtas, F.; Addesa, F.; Cavoto, G.; Iacoangeli, F.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Denisov, A. S.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Lapina, L. P.; Malyarenko, L. G.; Skorobogatov, V. V.; James, T.; Hall, G.; Pesaresi, M.; Raymond, M.

    2016-09-01

    A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the axis. The measured probability of inelastic nuclear interactions of protons in channeling along the axis is only about 10% of its amorphous level whereas in channeling along the (110) planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

  1. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Huang, J.; Teal, A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Suntech R& D Australia, Botany, NSW 2019 (Australia); Varlamov, S.; Green, M.A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2016-06-30

    In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization was studied. Most of the grain boundaries were coincidence lattice Σ3 twin boundaries and other types of boundaries such as, Σ6, Σ9, and Σ21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100 nm thick SiO{sub x} capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation. - Highlights: • Linear grains parallel to the scan direction formed with high density. • Σ3 coincidence lattice (CSL) boundaries found inside a grain • Grain boundaries exhibit various CSL boundaries such as Σ9, Σ18, and Σ27. • Grain with < 100 > orientation in normal direction showed highest electrical properties. • Improved voltage observed when percentage of < 100 > normal orientation is increased.

  2. Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ryningen, Birgit

    2008-07-01

    Included in this thesis are five publications and one report. The common theme is characterisation of directionally solidified multicrystalline silicon for solar cells. Material characterisation of solar cell silicon is naturally closely linked to both the casting process and to the solar cell processing: Many of the material properties are determined by the casting process, and the solar cell processing will to some extend determine which properties will influence the solar cell performance. Solar grade silicon (SoG-Si) made by metallurgical refining route and supplied by Elkem Solar was directionally solidified and subsequently characterised, and a simple solar cell process was applied. Except from some metallic co-precipitates in the top of the ingot, no abnormalities were found, and it is suggested that within the limits of the tests performed in this thesis, the casting and the solar cell processing, rather than the assumed higher impurity content, was the limiting factor. It is suggested in this thesis that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. The clusters will reduce the effect of gettering and even if gettering could be performed successfully, the clusters will still reduce the minority carrier mobility and hence the solar cell performance. It has further been pointed out that ingots solidified under seemingly equal conditions might have a pronounced difference in minority carrier lifetime. Ingots with low minority carrier lifetime have high dislocation densities. The ingots with the substantially higher lifetime seem all to be dominated by twins. It is also found a link between a higher undercooling and the ingots dominated by twins. It is suggested that the two types of ingots are subject to different nucleation and crystal growth mechanisms: For the ingots dominated by dislocations, which are over represented, the crystal growth is randomly nucleated at the

  3. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    Science.gov (United States)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  4. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

    Science.gov (United States)

    Zhao, Wenhan; Liu, Lijun

    2017-01-01

    The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

  5. Localization of Cortical Oscillations Induced by SCS Using Coherence

    Directory of Open Access Journals (Sweden)

    P. Sovka

    2007-12-01

    Full Text Available This paper suggests a method based on coherence analysis and scalp mapping of coherence suitable for more accurate localization of cortical oscillations induced by electric stimulation of the dorsal spinal cord (SCS, which were previously detected using spectral analysis. While power spectral density shows the increase of power during SCS only at small number of electrodes, coherence extends this area and sharpens its boundary simultaneously. Parameters of the method were experimentally optimized to maximize its reliability. SCS is applied to suppress chronic, intractable pain by patients, whom pharmacotherapy does not relieve. In our study, the pain developed in lower back and lower extremity as the result of unsuccessful vertebral discotomy, which is called failed-back surgery syndrome (FBSS. Our method replicated the results of previous analysis using PSD and extended them with more accurate localization of the area influenced by SCS.

  6. First Observation of the Deflection of a 33 TeV Pb Ion Beam in a Bent Silicon Crystal

    Science.gov (United States)

    Elsener, K.; Biino, C.; Clement, M.; Doble, N.; Gatignon, L.; Grafstrom, P.; Mikkelsen, U.; Taratin, A.; Møller, S. P.; Uggerhøj, E.

    1997-05-01

    The deflection of an ultra-relativistic, fully stripped Pb(82+) ion beam in a bent silicon crystal has been observed for the first time. The ions were provided by the CERN-SPS in the H4 beam at a momentum of 400 GeV/c/Z. A 60 mm long silicon crystal, bent over 50 mm to give a 4 mrad deflection angle, was used in this experiment. The measured Pb ion deflection efficiencies are comparable to the ones obtained with protons at an equivalent ratio p/Z, and are found to be about 15% for a beam with a divergence of 50 microradians (FWHM). The interaction rate observed in a background counter is reduced by about the same 15% when the crystal is well aligned with the beam. This corroborates further the channeling model, which predicts that channeled ions are steered away from regions of high electron densities as well as from the nuclei in the crystal.

  7. Fabrication and secondary-phase crystallization of rare-earth disilicate-silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Cinibulk, M.K.; Thomas, G. (Lawrence Berkeley Lab., CA (United States). Center for Advanced Materials); Johnson, S.M. (SRI International, Menlo Park, CA (United States). Materials Research Lab.)

    1992-08-01

    In this paper, the fabrication and intergranular-phase devitrification of silicon nitride densified with rare-earth (RE) oxide additives is investigated. The additions of the oxides of Sm, Gd, Dy, Er, and Yb, having high melting points and behaving similarly to Y[sub 2]O[sub 3], were compositionally controlled to tailor a microstructure with a crystalline secondary phase of RE[sub 2]Si[sub 2]O[sub 7]. The lanthanide oxides were found to be ass effective as Y[sub 2]O[sub 3] in densifying Si[sub 3]N[sub 4], resulting in identical microstructures and densities of 98-99% of theoretical density. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a thin residual amorphous film which was observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification.

  8. A quality comparison of protein crystals grown under containerless conditions generated by diamagnetic levitation, silicone oil and agarose gel.

    Science.gov (United States)

    Cao, Hui-Ling; Sun, Li-Hua; Li, Jian; Tang, Lin; Lu, Hui-Meng; Guo, Yun-Zhu; He, Jin; Liu, Yong-Ming; Xie, Xu-Zhuo; Shen, He-Fang; Zhang, Chen-Yan; Guo, Wei-Hong; Huang, Lin-Jun; Shang, Peng; He, Jian-Hua; Yin, Da-Chuan

    2013-10-01

    High-quality crystals are key to obtaining accurate three-dimensional structures of proteins using X-ray diffraction techniques. However, obtaining such protein crystals is often a challenge. Several containerless crystallization techniques have been reported to have the ability to improve crystal quality, but it is unknown which is the most favourable way to grow high-quality protein crystals. In this paper, a quality comparison of protein crystals which were grown under three containerless conditions provided by diamagnetic levitation, silicone oil and agarose gel was conducted. A control experiment on a vessel wall was also simultaneously carried out. Seven different proteins were crystallized under the four conditions, and the crystal quality was assessed in terms of the resolution limit, the mosaicity and the Rmerge. It was found that the crystals grown under the three containerless conditions demonstrated better morphology than those of the control. X-ray diffraction data indicated that the quality of the crystals grown under the three containerless conditions was better than that of the control. Of the three containerless crystallization techniques, the diamagnetic levitation technique exhibited the best performance in enhancing crystal quality. This paper is to our knowledge the first report of improvement of crystal quality using a diamagnetic levitation technique. Crystals obtained from agarose gel demonstrated the second best improvement in crystal quality. The study indicated that the diamagnetic levitation technique is indeed a favourable method for growing high-quality protein crystals, and its utilization is thus potentially useful in practical efforts to obtain well diffracting protein crystals.

  9. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  10. On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Sharma, K.; Ponomarev, M. V.; M. C. M. van de Sanden,; Creatore, M.

    2013-01-01

    In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by

  11. A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator (SOI) substrate is designed by the three-dimensional plane wave expansion method.

  12. (100)-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

    NARCIS (Netherlands)

    He, M.; Ishihara, R.; Metselaar, W.; Beenakker, K.

    2006-01-01

    Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grain

  13. Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors

    Science.gov (United States)

    Bardelli, L.; Bini, M.; Casini, G.; Pasquali, G.; Poggi, G.; Barlini, S.; Becla, A.; Berjillos, R.; Borderie, B.; Bougault, R.; Bruno, M.; Cinausero, M.; D'Agostino, M.; de Sanctis, J.; Dueñas, J. A.; Edelbruck, P.; Geraci, E.; Gramegna, F.; Kordyasz, A.; Kozik, T.; Kravchuk, V. L.; Lavergne, L.; Marini, P.; Nannini, A.; Negoita, F.; Olmi, A.; Ordine, A.; Piantelli, S.; Rauly, E.; Rivet, M. F.; Rosato, E.; Scian, C.; Stefanini, A. A.; Vannini, G.; Velica, S.; Vigilante, M.; Fazia Collaboration

    2009-07-01

    Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0∘ off the axis and some off the axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor ˜3 with respect to the measured optimal values (for example 7∘ off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0∘ cut detectors. For Pulse Shape Analysis applications, the necessity of using such "random" oriented silicon detectors is demonstrated.

  14. Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bardelli, L. [University of Florence (Italy); I.N.F.N. Sezione di Firenze (Italy)], E-mail: bardelli@fi.infn.it; Bini, M. [University of Florence (Italy); I.N.F.N. Sezione di Firenze (Italy); Casini, G. [I.N.F.N. Sezione di Firenze (Italy); Pasquali, G.; Poggi, G. [University of Florence (Italy); I.N.F.N. Sezione di Firenze (Italy); Barlini, S. [LPC Caen, ENSICAEN, Universite de Caen, CNRS/IN2P3, Caen (France); Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay cedex (France); Becla, A. [Jagiellonian University, Institute of Physics, Reymonta 4, 30-059 Krakow (Poland); Berjillos, R. [Departamento de Fisica Aplicada, Universidad de Huelva, E-21071 Huelva (Spain); Borderie, B. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay cedex (France); Bougault, R. [LPC Caen, ENSICAEN, Universite de Caen, CNRS/IN2P3, Caen (France); Bruno, M. [University of Bologna (Italy); I.N.F.N. Sezione di Bologna (Italy); Cinausero, M. [I.N.F.N. Laboratori Nazionali di Legnaro (Italy); D' Agostino, M.; De Sanctis, J. [University of Bologna (Italy); I.N.F.N. Sezione di Bologna (Italy); Duenas, J.A. [Departamento de Fisica Aplicada, Universidad de Huelva, E-21071 Huelva (Spain); Edelbruck, P. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay cedex (France); Geraci, E. [University of Bologna (Italy); I.N.F.N. Sezione di Bologna (Italy); Gramegna, F. [I.N.F.N. Laboratori Nazionali di Legnaro (Italy); Kordyasz, A. [Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw (Poland); Kozik, T. [Jagiellonian University, Institute of Physics, Reymonta 4, 30-059 Krakow (Poland)] (and others)

    2009-07-01

    Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0 deg. off the <111> axis and some off the <100> axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor {approx}3 with respect to the measured optimal values (for example 7 deg. off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0 deg. cut detectors. For Pulse Shape Analysis applications, the necessity of using such 'random' oriented silicon detectors is demonstrated.

  15. Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

    Science.gov (United States)

    Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2017-06-01

    This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

  16. Characterization of the anamorphic and frequency dependent phenomenon in Liquid Crystal on Silicon displays

    Science.gov (United States)

    Lobato, L.; Lizana, A.; Márquez, A.; Moreno, I.; Iemmi, C.; Campos, J.; Yzuel, M. J.

    2011-04-01

    The diffractive efficiency of Liquid Crystal on Silicon (LCoS) displays can be greatly diminished by the appearance of temporal phase fluctuations in the reflected beam, depolarization effects and also because of phase modulation depths smaller than 2π. In order to maximize the efficiency of the Diffractive Optical Elements (DOEs) implemented in the LCoS device, the Minimum Euclidean Distance principle can be applied. However, not all the diffractive elements can be corrected in the same way due to the anamorphic and frequency dependent phenomenon, which is related to the LCoS response, largely dependending on the period and the spatial orientation of the generated DOE. Experimental evidence for the anamorphic and frequency dependent phenomenon is provided in this paper, as well as a comparative study between the efficiency obtained for binary gratings of different periods

  17. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  18. Properties of localization in silicon-based lattice periodicity breaking photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yuquan; Wang, Xiaofei; Wang, Yufang; Zhang, Guoquan; Fan, Wande; Cao, Xuewei, E-mail: xwcao@nankai.edu.cn [School of Physics, Nankai University, Tianjin, 300071 (China); Wu, Yuanbin [School of Physics, Nankai University, Tianjin, 300071 (China); Dip. di Fisica, Università di Roma “La Sapienza”, Piazzale Aldo Moro 5, I-00185 Roma (Italy); EDSFA, Université de Nice Sophia Antipolis, 06103 Nice (France)

    2013-11-15

    The light localization effects in silicon photonic crystal cavities at different disorder degrees have been studied using the finite difference time domain (FDTD) method in this paper. Numerical results showed that localization occurs and enhancement can be gained in the region of the cavity under certain conditions. The stabilities of the localization effects due to the structural perturbations have been investigated too. Detailed studies showed that when the degree of structural disorder is small(about 10%), the localization effects are stable, the maximum enhancement factor can reach 16.5 for incident wavelength of 785 nm and 23 for 850 nm in the cavity, with the degree of disorder about 8%. The equivalent diameter of the localized spot is almost constant at different disorder degrees, approximating to λ/7, which turned out to be independent on the structural perturbation.

  19. Crack tip dislocations observed by TEM-tomography in silicon single crystals

    Science.gov (United States)

    Sadamatsu, Sunao; Tanaka, Masaki; Honda, Masaki; Higashida, Kenji

    2010-07-01

    3D observations of dislocations at a crack tip were attempted by transmission electron microscopy and computed tomography in order to reveal the 3D structure of dislocations emitted around a crack tip. {011} cracks were introduced into a (001) silicon single crystal wafer by using an indentation method at room temperature. The specimens indented were heated and kept at high temperatures to introduce dislocations from the crack tip. The specimen holder was tilted ±31° by 2° step and dislocation images were taken at every step. The diffraction vector was kept nearly 220 during the tilting operation. The Burgers vectors of the dislocation segments were determined, which included the signs of Burgers vectors. The dislocations observed here were those which accommodate mode II stress intensity around the crack tip. 3D observations using electron tomography reveal these complex crucial processes around the crack tip, which should contribute to understanding the dislocation process improving fracture toughness of crystalline materials.

  20. Four-wave mixing in slow light engineered silicon photonic crystal waveguides.

    Science.gov (United States)

    Monat, C; Ebnali-Heidari, M; Grillet, C; Corcoran, B; Eggleton, B J; White, T P; O'Faolain, L; Li, J; Krauss, T F

    2010-10-25

    We experimentally investigate four-wave mixing (FWM) in short (80 μm) dispersion-engineered slow light silicon photonic crystal waveguides. The pump, probe and idler signals all lie in a 14 nm wide low dispersion region with a near-constant group velocity of c/30. We measure an instantaneous conversion efficiency of up to -9dB between the idler and the continuous-wave probe, with 1W peak pump power and 6 nm pump-probe detuning. This conversion efficiency is found to be considerably higher (>10 × ) than that of a Si nanowire with a group velocity ten times larger. In addition, we estimate the FWM bandwidth to be at least that of the flat band slow light window. These results, supported by numerical simulations, emphasize the importance of engineering the dispersion of PhC waveguides to exploit the slow light enhancement of FWM efficiency, even for short device lengths.

  1. Theory of Pulsed Four-Wave-Mixing in One-dimensional Silicon Photonic Crystal Slab Waveguides

    CERN Document Server

    Lavdas, Spyros

    2015-01-01

    We present a comprehensive theoretical analysis and computational study of four-wave mixing (FWM) of optical pulses co-propagating in one-dimensional silicon photonic crystal waveguides (Si-PhCWGs). Our theoretical analysis describes a very general set-up of the interacting optical pulses, namely we consider nondegenerate FWM in a configuration in which at each frequency there exists a superposition of guiding modes. We incorporate in our theoretical model all relevant linear optical effects, including waveguide loss, free-carrier (FC) dispersion and FC absorption, nonlinear optical effects such as self- and cross-phase modulation (SPM, XPM), two-photon absorption (TPA), and cross-absorption modulation (XAM), as well as the coupled dynamics of FCs and optical field. In particular, our theoretical analysis based on the coupled-mode theory provides rigorously derived formulae for linear dispersion coefficients of the guiding modes, linear coupling coefficients between these modes, as well as the nonlinear waveg...

  2. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Science.gov (United States)

    Liu, Dan; Hu, Sen; Gao, Yihua

    2017-07-01

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%.

  3. Local vibration modes of shallow thermal donors in nitrogen-doped CZ silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, N. [RIAST, Osaka Prefecture University, Sakai, 599-8570 (Japan) and Nitrogen Measurement WG, JEITA, Tokyo, 101-0062 (Japan)]. E-mail: inouen@riast.osakafu-u.ac.jp; Nakatsu, M. [RIAST, Osaka Prefecture University, Sakai, 599-8570 (Japan); Ono, H. [Japan Fine Ceramics Center, Tokyo, 105-0003 (Japan); Nitrogen Measurement WG, JEITA, Tokyo, 101-0062 (Japan)

    2006-04-01

    Local vibration mode (LVM) infrared absorption from shallow thermal donors (STD) composed of nitrogen-oxygen complexes in nitrogen-doped CZ silicon crystals was examined. The samples whose STD concentration had been determined were measured. The sample dependence of the peaks at 810 and 1018cm{sup -1} was similar to that of STD but the estimated concentration was slightly higher. New LVM peaks were found at 855, 973, 982, 1002cm{sup -1} and so on. Their magnitude and sample dependence agreed well with those of STD. Annealing temperature dependence of other samples supported the results. Annealing time dependence of STD concentration at 650 deg. C was examined. STD peaks at 250, 242 and those at 240, 234 and 238cm{sup -1} behaved differently, suggesting the presence of two kinds of STD origin.

  4. Liquid crystal on silicon (LCOS) devices and their application to scene projection

    Science.gov (United States)

    Ewing, Teresa; Buck, Joseph; Serati, Steve; Linnenberger, Anna; Masterson, Hugh; Stockley, Jay

    2012-06-01

    Liquid Crystal on Silicon micro-displays are the enabling components on a variety of commercial consumer products including high-definition projection televisions, office projectors, camera view-finders, head-mounted displays and picoprojectors. The use and potential application of LCOS technology in calibrated scene projectors is just beginning to be explored. Calibrated LCOS displays and projectors have been built and demonstrated not only in the visible regime, but also in the SWIR, MWIR and LWIR. However, LCOS devices are not only capable of modulating the intensity of a broadband illumination source, but can also manipulate the polarization and/or phase of a laser source. This opens the possibility of both calibrated polarization displays and holographic projection displays.

  5. Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing.

    Science.gov (United States)

    Chang, Chia-Chi; Chen, Haitian; Chen, Chun-Chung; Hung, Wei-Hsuan; Hsu, I-Kai; Theiss, Jesse; Zhou, Chongwu; Cronin, Stephen B

    2011-07-29

    We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 µm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale.

  6. Photonic crystal dumbbell resonators in silicon and aluminum nitride integrated optical circuits

    CERN Document Server

    Pernice, W H P; Tang, H X

    2014-01-01

    Tight confinement of light in photonic cavities provides an efficient template for the realization of high optical intensity with strong field gradients. Here we present such a nanoscale resonator device based on a one-dimensional photonic crystal slot cavity. Our design allows for realizing highly localized optical modes with theoretically predicted Q factors in excess of 106. The design is demonstrated experimentally both in a high-contrast refractive index system (silicon), as well as in medium refractive index contrast devices made from aluminum nitride. We achieve extinction ratio of 21dB in critically coupled resonators using an on-chip readout platform with loaded Q factors up to 33,000. Our approach holds promise for realizing ultra-small opto-mechanical resonators for high-frequency operation and sensing applications.

  7. POSSIBILITY RESEARCH FOR SILICON CARBIDE BULK CRYSTALS GROWTH OF 3C POLYTYPE FOR POWER DEVICES

    Directory of Open Access Journals (Sweden)

    P. V. Bulat

    2014-05-01

    Full Text Available The paper deals with creation of heteropolytypes instrument structures on silicon carbide for power devices not subjected to degradation of electrical properties. The phenomenon of polytypism is considered. Characteristics of different SiC polytypes are given. Information is cited about the causes and effects for degradation of p-n -structures of power devices based on SiC at large density direct current passing. It is shown that hetero-transitions between SiC polytypes may have more structural perfection than hetero-transitions between semiconductors with different chemical nature. Conclusion is made about application prospects for heterostructures based on 3C-SiC polytype in devices of modern power electronics. A brief overview of the possible methods for 3C-SiC single crystals growth is done. A basic scheme for creation of heteropolytype 3C-SiC structures based on substrates of 6H-SiC polytype is suggested.

  8. Holographic three-dimensional display and hologram calculation based on liquid crystal on silicon device [invited].

    Science.gov (United States)

    Li, Junchang; Tu, Han-Yen; Yeh, Wei-Chieh; Gui, Jinbin; Cheng, Chau-Jern

    2014-09-20

    Based on scalar diffraction theory and the geometric structure of liquid crystal on silicon (LCoS), we study the impulse responses and image depth of focus in a holographic three-dimensional (3D) display system. Theoretical expressions of the impulse response and the depth of focus of reconstructed 3D images are obtained, and experimental verifications of the imaging properties are performed. The results indicated that the images formed by holographic display based on the LCoS device were periodic image fields surrounding optical axes. The widths of the image fields were directly proportional to the wavelength and diffraction distance, and inversely proportional to the pixel size of the LCoS device. Based on the features of holographic 3D imaging and focal depth, we enhance currently popular hologram calculation methods of 3D objects to improve the computing speed of hologram calculation.

  9. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; YIN Min; WANG Jin-Xiao; HE De-Yan

    2005-01-01

    @@ Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350℃ using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density,low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.

  10. Sensitive temperature measurements based on Lorentzian and Fano resonance lineshapes of a silicon photonic crystal cavity

    Science.gov (United States)

    Zhao, Chenyang; Fang, Liang; Yuan, Qinchen; Gan, Xuetao; Zhao, Jianlin

    2016-10-01

    We report a high-performance photonic temperature sensor by exploiting a silicon photonic crystal (PC) cavity. Since the PC cavity's spectra are very sensitive to the refractive index change, we observe remarkable variations of its resonant wavelength and output power under varying temperature levels. In a PC cavity with Lorentzian resonance lineshape, the sensor exhibits a linear spectrum-sensitivity of 70 pm/°, and the power-variation presents a high sensitivity as 1.28 dB/°. In addition, the Fano resonance lineshape generated by the PC cavity has also been employed to measure the temperature, which shows improved power sensitivity as 2.94 dB/ °. The demonstrated PC cavity-based sensor offers great potentials for low-cost, high sensitivity homogeneous sensing in chip-integrated devices.

  11. Deposition and characterization of silicon thin-films by aluminum-induced crystallization

    Science.gov (United States)

    Ebil, Ozgenc

    Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined

  12. The Influence of Radiation Damage on the Deflection of High-Energy Beams in Bent Silicon Crystals

    CERN Document Server

    Biino, C; Doble, Niels T; Elsener, K; Gatignon, L; Grafström, P; Mikkelsen, U; Kirsebom, K; Møller, S P; Uggerhøj, Erik; Worm, T

    1996-01-01

    Experimental results obtained for deflection of 450 GeV/c protons channeling along the {111} planes in a bent, strongly irradiated silicon crystal are presented. A comparison between the deflection efficiencies in irradiated areas and non-irradiated areas in the crystal shows that irradiation by 2.4 · 1020 protons/cm2 leads to a reduction of around 30 % in deflection efficiency. As a consequence, beam-splitting and extraction from an accelerator by means of a bent crystal are feasible solutions at high energies even for intense beams and during long periods.

  13. Beam tests of lead tungstate crystal matrices and a silicon strip preshower detector for the CMS electromagnetic calorimeter

    CERN Document Server

    Auffray, Etiennette; Barney, D; Bassompierre, Gabriel; Benhammou, Ya; Blick, A M; Bloch, P; Bonamy, P; Bourotte, J; Buiron, L; Cavallari, F; Chipaux, Rémi; Cockerill, D J A; Dafinei, I; Davies, G; Depasse, P; Deiters, K; Diemoz, M; Dobrzynski, Ludwik; Donskov, S V; Mamouni, H E; Ercoli, C; Faure, J L; Felcini, Marta; Gautheron, F; Géléoc, M; Givernaud, Alain; Gninenko, S N; Godinovic, N; Graham, D J; Guillaud, J P; Guschin, E; Haguenauer, Maurice; Hillemanns, H; Hofer, H; Ille, B; Inyakin, A V; Jääskeläinen, S; Katchanov, V A; Kirn, T; Kloukinas, Kostas C; Korzhik, M V; Lassila-Perini, K M; Lebrun, P; Lecoq, P; Lecoeur, Gérard; Lecomte, P; Leonardi, E; Locci, E; Loos, R; Longo, E; MacKay, C K; Martin, E; Mendiburu, J P; Musienko, Yu V; Nédélec, P; Nessi-Tedaldi, F; Organtini, G; Paoletti, S; Pansart, J P; Peigneux, J P; Puljak, I; Qian, S; Reid, E; Renker, D; Rosowsky, A; Rosso, E; Rusack, R W; Rykaczewski, H; Schneegans, M; Seez, Christopher J; Semeniouk, I N; Shagin, P M; Sillou, D; Singovsky, A V; Sougonyaev, V; Soric, I; Verrecchia, P; Vialle, J P; Virdee, Tejinder S; Zhu, R Y

    1998-01-01

    Tests of lead tungstate crystal matrices carried out in high-energy electron beams in 1996, using new crystals, new APDs and an improved test set-up, confirm that an energy resolution of better than 0 .6% at 100 GeV can be obtained when the longitudinal uniformity of the struck crystal is adequate. Light loss measurements under low dose irradiation are reported. It is shown that there is no loss of energy resolution after irradiation and that the calibration change due to light loss can be tracked with a precision monitoring system. Finally, successuful tests with a preshower device, equipped wi th silicon strip detector readout, are described.

  14. Failure mechanisms of single-crystal silicon electrodes in lithium-ion batteries

    Science.gov (United States)

    Shi, Feifei; Song, Zhichao; Ross, Philip N.; Somorjai, Gabor A.; Ritchie, Robert O.; Komvopoulos, Kyriakos

    2016-06-01

    Long-term durability is a major obstacle limiting the widespread use of lithium-ion batteries in heavy-duty applications and others demanding extended lifetime. As one of the root causes of the degradation of battery performance, the electrode failure mechanisms are still unknown. In this paper, we reveal the fundamental fracture mechanisms of single-crystal silicon electrodes over extended lithiation/delithiation cycles, using electrochemical testing, microstructure characterization, fracture mechanics and finite element analysis. Anisotropic lithium invasion causes crack initiation perpendicular to the electrode surface, followed by growth through the electrode thickness. The low fracture energy of the lithiated/unlithiated silicon interface provides a weak microstructural path for crack deflection, accounting for the crack patterns and delamination observed after repeated cycling. On the basis of this physical understanding, we demonstrate how electrolyte additives can heal electrode cracks and provide strategies to enhance the fracture resistance in future lithium-ion batteries from surface chemical, electrochemical and material science perspectives.

  15. Progress and challenges for cost effective kerfless Silicon crystal growth for PV application

    Science.gov (United States)

    Serra, J. M.; Alves, J. Maia; Vallera, A. M.

    2017-06-01

    The major barrier for PV penetration is cost. And the single most important cost factor in silicon technology is the wafer (≈35% of the module cost). Although tremendous progress on cell processing has been reported in recent years, a much smaller evolution is seen on what should be the key point to address - the wafer. The ingot-slicing process is reaching its limits as the wafer thickness is reduced in an effort to lower material costs. Kerf losses of ≈50% and an increase in breakage of a high value added material are putting a lower bound to this approach. New ideas are therefore needed for producing wafers in a way to overcome these limitations. In this paper we present three new concepts being developed in our laboratory that have one thing in common: they all are zero kerf loss processes, aiming at significant reductions in material loss. One explores the concept of exfoliation, the other two aim at the growth of silicon directly into ribbons. These were conceived as continuous processes, based on a floating molten zone concept, to avoid impurity contamination during crystallization.

  16. Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

    Science.gov (United States)

    Liu, Xin; Gao, Bing; Nakano, Satoshi; Kakimoto, Koichi

    2017-09-01

    Generation, incorporation, and accumulation of carbon (C) were investigated by transient global simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact reaction between the quartz crucible and graphite susceptor was introduced as an extra origin of C contamination. The contribution of the contact reaction on C accumulation is affected by the back diffusion of C monoxide (CO) from the gap between the gas-guide and the crucible. The effect of the gas-guide coating on C reduction was elucidated by taking the reaction between the silicon carbide (SiC) coating and gaseous Si monoxide (SiO) into account. Application of the SiC coating on the gas-guide could effectively reduce the C contamination because of its higher thermochemical stability relative to that of graphite. Gas flow control on the back diffusion of the generated CO was examined by the parametric study of argon gas flow rate. Generation and back diffusion of CO were both effectively suppressed by the increase in the gas flow rate because of the high Péclet number of species transport. Strategies for C content reduction were discussed by analyzing the mechanisms of C accumulation process. According to the elucidated mechanisms of C accumulation, the final C content depends on the growth duration and contamination flux at the gas/melt interface.

  17. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-02-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW-1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10-90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

  18. Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides

    Science.gov (United States)

    Sahin, E.; Ooi, K. J. A.; Chen, G. F. R.; Ng, D. K. T.; Png, C. E.; Tan, D. T. H.

    2017-09-01

    We present the design, fabrication, and characterization of photonic crystal waveguides (PhCWs) on an ultra-silicon-rich nitride (USRN) platform, with the goal of augmenting the optical nonlinearities. The design goals are to achieve an optimized group index curve on the PhCW band edge with a non-membrane PhCW with symmetric SiO2 undercladding and overcladding, so as to maintain back-end CMOS compatibility and better structural robustness. Linear optical characterization, as well as nonlinear optical characterization of PhCWs on ultra-silicon-rich nitride is performed at the telecommunication wavelengths. USRN's negligible two-photon absorption and free carrier losses at the telecommunication wavelengths ensure that there is no scaling of two-photon related losses with the group index, thus maintaining a high nonlinear efficiency. Self-phase modulation experiments are performed using a 96.6 μm PhCW. A 1.5π phase shift is achieved with an input peak power of 2.5 W implying an effective nonlinear parameter of 1.97 × 104 (W m)-1. This nonlinear parameter represents a 49× enhancement in the nonlinear parameter from the slow light effect, in good agreement with expected scaling from the measured group index.

  19. Direct band gap silicon crystals predicted by an inverse design method

    Science.gov (United States)

    Oh, Young Jun; Lee, In-Ho; Lee, Jooyoung; Kim, Sunghyun; Chang, Kee Joo

    2015-03-01

    Cubic diamond silicon has an indirect band gap and does not absorb or emit light as efficiently as other semiconductors with direct band gaps. Thus, searching for Si crystals with direct band gaps around 1.3 eV is important to realize efficient thin-film solar cells. In this work, we report various crystalline silicon allotropes with direct and quasi-direct band gaps, which are predicted by the inverse design method which combines a conformation space annealing algorithm for global optimization and first-principles density functional calculations. The predicted allotropes exhibit energies less than 0.3 eV per atom and good lattice matches, compared with the diamond structure. The structural stability is examined by performing finite-temperature ab initio molecular dynamics simulations and calculating the phonon spectra. The absorption spectra are obtained by solving the Bethe-Salpeter equation together with the quasiparticle G0W0 approximation. For several allotropes with the band gaps around 1 eV, photovoltaic efficiencies are comparable to those of best-known photovoltaic absorbers such as CuInSe2. This work is supported by the National Research Foundation of Korea (2005-0093845 and 2008-0061987), Samsung Science and Technology Foundation (SSTF-BA1401-08), KIAS Center for Advanced Computation, and KISTI (KSC-2013-C2-040).

  20. Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Wang, Shiyi; Zhan, Qiwen; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Lee, Charles Y -C; Chen, Ray T

    2015-01-01

    In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as we...

  1. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

  2. Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

    Science.gov (United States)

    Liu, Xin; Gao, Bing; Kakimoto, Koichi

    2015-05-01

    Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.

  3. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-05-04

    In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

  4. Performance study of Philips digital silicon photomultiplier coupled to scintillating crystals

    CERN Document Server

    Liu, Z.; Auffray, E.; Lecoq, P.; Paganoni, M.

    2016-01-01

    Silicon photomultipliers (SiPMs) and scintillators are often arranged in the shape of arrays in Positron Emission Tomography (PET) systems. Digital SiPMs provide signal readout in single photon avalanche diode (SPAD) level. From the photon count rate measurement of each SPAD cell of digital SiPM, we found that the output scintillating photons distribute in an area larger than the scintillator physical coupling area. Taking advantage of the possibility to enable/disable individual cells of the digital SiPM, a group of Lutetium-yttrium oxyorthosilicate (LYSO) crystals with different dimensions coupled to a digital SiPM was used to study the influence of using different SiPM active area on the number of photons detected, energy resolution and coincidence time resolution (CTR). For the same crystal coupled to the digital SiPM, the larger the active area of digital SiPM, the higher the number of photons detected. The larger active area of the digital SiPM also results in a better energy resolution after saturation...

  5. Crystallization of medium length 1-alcohols in mesoporous silicon: An X-ray diffraction study

    CERN Document Server

    Henschel, Anke; Knorr, Klaus

    2008-01-01

    The linear 1-alcohols n-C16H33OH, n-C17H35OH, n-C19H37OH have been imbibed and solidified in lined up, tubular mesopores of silicon with 10 nm and 15 nm mean diameters, respectively. X-ray diffraction measurements reveal a set of six discrete orientation states (''domains'') characterized by a perpendicular alignment of the molecules with respect to the long axis of the pores and by a four-fold symmetry about this direction, which coincides with the crystalline symmetry of the Si host. A Bragg peak series characteristic of the formation of bilayers indicates a lamellar structure of the spatially confined alcohol crystals in 15 nm pores. By contrast, no layering reflections could be detected for 10 nm pores. The growth mechanism responsible for the peculiar orientation states is attributed to a nano-scale version of the Bridgman technique of single-crystal growth, where the dominant growth direction is aligned parallelly to the long pore axes. Our observations are analogous to the growth phenomenology encounte...

  6. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Energy Technology Data Exchange (ETDEWEB)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E. [Bilkent Univ., Ankara (Turkey). Dept. of Physics

    2001-07-01

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation. (orig.)

  7. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Science.gov (United States)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  8. The SCS double hydrometer test in dispersive soil identification

    CSIR Research Space (South Africa)

    Maharaj, A

    2013-09-01

    Full Text Available -1 Proceedings of the 18th international conference on soil mechanics and geotechnical engineering, Paris, France, 2-6 September 2013 The SCS double hydrometer test in dispersive soil identification Maharaj A and Paige-Green P CSIR, Built Environent...

  9. Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength

    Institute of Scientific and Technical Information of China (English)

    Duan Chunyan; Liu Chao; Ai Bin; Lai Jianjun; Deng Youjun; Shen Hui

    2011-01-01

    Selected area laser-crystallized polycrystalline silicon(p-Si)thin films were prepared by the third harmonics(355 nm wavelength)generated by a solid-state pulsed Nd:YAG laser.Surface morphologies of 400 nm thick films after laser irradiation were analyzed.Raman spectra show that film crystallinity is improved with increase of laser energy.The optimum laser energy density is sensitive to the film thickness.The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm2 for 300 nm thick films and between 777-993 mJ/cm2 for 400 nm thick films.The optimized laser energy density is 634,975 and 1571 mJ/cm2 for 300,400 and 500 nm thick films,respectively.

  10. Laser-induced ferroelectric domain engineering in LiNbO3 crystals using an amorphous silicon overlayer

    Science.gov (United States)

    Zisis, G.; Martinez-Jimenez, G.; Franz, Y.; Healy, N.; Masaud, T. M.; Chong, H. M. H.; Soergel, E.; Peacock, A. C.; Mailis, S.

    2017-08-01

    We report laser-induced poling inhibition and direct poling in lithium niobate crystals (LiNbO3), covered with an amorphous silicon (a-Si) light-absorbing layer, using a visible (488 nm) continuous wave laser source. Our results show that the use of the a-Si overlayer produces deeper poling inhibited domains with minimum surface damage, as compared to previously reported UV laser writing experiments on uncoated crystals, thus increasing the applicability of this method in the production of ferroelectric domain engineered structures for nonlinear optical applications. The characteristics of the poling inhibited domains were investigated using differential etching and piezoresponse force microscopy.

  11. Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

    Science.gov (United States)

    Gao, B.; Kakimoto, K.

    2014-06-01

    Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.

  12. Study of resonant modes in a 700 nm pitch macroporous silicon photonic crystal

    Science.gov (United States)

    Cardador, D.; Vega, D.; Segura, D.; Rodríguez, A.

    2017-01-01

    In this study the modes produced by a defect inserted in a macroporous silicon (MP) photonic crystal (PC) have been studied theoretical and experimentally. In particular, the transmitted and reflected spectra have been analyzed for variations in the defect's length and width. The performed simulations show that the resonant frequency is more easily adjusted for the fabricated samples by length tuning rather than width. The optimum resonance peak results when centered in the PC bandgap. The changes in the defect geometry result in small variations of the optical response of the PC. The resonance frequency is most sensitive to length variations, while the mode linewidth shows greater change with the defect width variation. Several MPS photonic crystals were fabricated by the electrochemical etching (EE) process with optical response in the range of 5.8 μm to 6.5 μm. Results of the characterization are in good agreement with simulations. Further samples were fabricated consisting of ordered modulated pores with a pitch of 700 nm. This allowed to reduce the vertical periodicity and therefore to have the optical response in the range of 4.4 μm to 4.8 μm. To our knowledge, modes working in this range of wavelengths have not been previously reported in 3-d MPS structures. Experimental results match with simulations, showing a linear relationship between the defect's length and working frequency inside the bandgap. We demonstrate the possibility of tailoring the resonance peak in both ranges of wavelengths, where the principal absorption lines of different gases in the mid infrared are placed. This makes these structures very promising for their application to compact gas sensors.

  13. Weakening of the anisotropy of surface roughness in ultra-precision turning of single-crystal silicon

    Directory of Open Access Journals (Sweden)

    Wang Minghai

    2015-08-01

    Full Text Available Ultra-precision machining causes materials to undergo a greatly strained deformation process in a short period of time. The effect of shear strain rates on machining quality, in particular on surface anisotropy, is a topic deserving of research that has thus far been overlooked. This study analyzes the impact of the strain rate during the ultra-precision turning of single-crystal silicon on the anisotropy of surface roughness. Focusing on the establishment of cutting models considering the tool rake angle and the edge radius, this is the first research that takes into account the strain rate dislocation emission criteria in studying the effects of the edge radius, the cutting speed, and the cutting thickness on the plastic deformation of single-crystal silicon. The results of this study show that the uses of a smaller edge radius, faster cutting speeds, and a reduced cutting thickness can result in optimally uniform surface roughness, while the use of a very sharp cutting tool is essential when operating with smaller cutting thicknesses. A further finding is that insufficient plastic deformation is the major cause of increased surface roughness in the ultra-precision turning of brittle materials. On this basis, we propose that the capacity of single-crystal silicon to emit dislocations be improved as much as possible before brittle fracture occurs, thereby promoting plastic deformation and minimizing the anisotropy of surface roughness in the machined workpiece.

  14. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  15. Ultrafast all-optical order-to-chaos transition in silicon photonic crystal chips

    KAUST Repository

    Bruck, Roman

    2016-06-08

    The interaction of light with nanostructured materials provides exciting new opportunities for investigating classical wave analogies of quantum phenomena. A topic of particular interest forms the interplay between wave physics and chaos in systems where a small perturbation can drive the behavior from the classical to chaotic regime. Here, we report an all-optical laser-driven transition from order to chaos in integrated chips on a silicon photonics platform. A square photonic crystal microcavity at telecom wavelengths is tuned from an ordered into a chaotic regime through a perturbation induced by ultrafast laser pulses in the ultraviolet range. The chaotic dynamics of weak probe pulses in the near infrared is characterized for different pump-probe delay times and at various positions in the cavity, with high spatial accuracy. Our experimental analysis, confirmed by numerical modelling based on random matrices, demonstrates that nonlinear optics can be used to control reversibly the chaotic behavior of light in optical resonators. (Figure presented.) . © 2016 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  16. Ultracompact all-optical XOR logic gate in a slow-light silicon photonic crystal waveguide.

    Science.gov (United States)

    Husko, C; Vo, T D; Corcoran, B; Li, J; Krauss, T F; Eggleton, B J

    2011-10-10

    We demonstrate an ultracompact, chip-based, all-optical exclusive-OR (XOR) logic gate via slow-light enhanced four-wave mixing (FWM) in a silicon photonic crystal waveguide (PhCWG). We achieve error-free operation (<10⁻⁹) for 40 Gbit/s differential phase-shift keying (DPSK) signals with a 2.8 dB power penalty. Slowing the light to vg = c/32 enables a FWM conversion efficiency, η, of -30 dB for a 396 μm device. The nonlinear FWM process is enhanced by 20 dB compared to a relatively fast mode of vg = c/5. The XOR operation requires ≈ 41 mW, corresponding to a switching energy of 1 pJ/bit. We compare the slow-light PhCWG device performance with experimentally demonstrated XOR DPSK logic gates in other platforms and discuss scaling the device operation to higher bit-rates. The ultracompact structure suggests the potential for device integration.

  17. Theory of pulsed four-wave mixing in one-dimensional silicon photonic crystal slab waveguides

    Science.gov (United States)

    Lavdas, Spyros; Panoiu, Nicolae C.

    2016-03-01

    We present a comprehensive theoretical analysis and computational study of four-wave mixing (FWM) of optical pulses co-propagating in one-dimensional silicon photonic crystal waveguides (Si-PhCWGs). Our theoretical analysis describes a very general setup of the interacting optical pulses, namely we consider nondegenerate FWM in a configuration in which at each frequency there exists a superposition of guiding modes. We incorporate in our theoretical model all relevant linear optical effects, including waveguide loss, free-carrier (FC) dispersion and FC absorption, nonlinear optical effects such as self- and cross-phase modulation (SPM, XPM), two-photon absorption (TPA), and cross-absorption modulation (XAM), as well as the coupled dynamics of free-carriers FCs and optical field. In particular, our theoretical analysis based on the coupled-mode theory provides rigorously derived formulas for linear dispersion coefficients of the guiding modes, linear coupling coefficients between these modes, as well as the nonlinear waveguide coefficients describing SPM, XPM, TPA, XAM, and FWM. In addition, our theoretical analysis and numerical simulations reveal key differences between the characteristics of FWM in the slow- and fast-light regimes, which could potentially have important implications to the design of ultracompact active photonic devices.

  18. Precision control of thermal transport in cryogenic single-crystal silicon devices

    CERN Document Server

    Rostem, Karwan; Colazo, Felipe A; Crowe, Erik J; Denis, Kevin L; Lourie, Nathan P; Moseley, Samuel H; Stevenson, Thomas R; Wollack, Edward J

    2014-01-01

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path $\\ell$ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than $\\ell$, even when the surface is fairly smooth, 5-10 nm rms, and the peak thermal wavelength is 0.6 $\\mu$m. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order $\\ell$, the conductance is dominated by ballistic transport and is effectively set by the beam area. We have demonstrated a uniformity of $\\pm$8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams tha...

  19. Young's Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams.

    Science.gov (United States)

    Calahorra, Y; Shtempluck, O; Kotchetkov, V; Yaish, Y E

    2015-05-13

    Initial or residual stress plays an important role in nanoelectronics. Valley degeneracy in silicon nanowires (SiNWs) is partially lifted due to built-in stresses, and consequently, electron-phonon scattering rate is reduced and device mobility and performance are improved. In this study we use a nonlinear model describing the force-deflection relationship to extract the Young's modulus, the residual stress, and the crystallographic growth orientation of SiNW beams. Measurements were performed on suspended doubly clamped SiNWs subjected to atomic force microscopy (AFM) three-point bending constraints. The nanowires comprised different growth directions and two SiO2 sheath thicknesses, and underwent different rapid thermal annealing processes. Analysis showed that rapid thermal annealing introduces compressive strains into the SiNWs and may result in buckling of the SiNWs. Furthermore, the core-shell model together with the residual stress analysis accurately describe the Young's modulus of oxide covered SiNWs and the crystal orientation of the measured nanowires.

  20. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avishek, E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Law, Felix; Widenborg, Per I. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Dalapati, Goutam K., E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  1. Unclassical ripple patterns in single-crystal silicon produced by femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Wei [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); State Key Laboratory of Transient Optics and Photonics, Xi' an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences, Xi' an, Shaanxi 710119 (China); Cheng Guanghua [State Key Laboratory of Transient Optics and Photonics, Xi' an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences, Xi' an, Shaanxi 710119 (China); Feng Qiang, E-mail: qfeng@skl.ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083 (China)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Transition from classical ripples to unclassical ripples. Black-Right-Pointing-Pointer Laser fluence has a significant effect on the unclassical ripple period. Black-Right-Pointing-Pointer Relationship between structures and their parametric dependence is established. Black-Right-Pointing-Pointer Capillary wave is responsible for the formation of unclassical ripples. - Abstract: Laser-induced periodic surface structures (LIPSS) in single-crystal silicon upon irradiation with multiple linearly polarized femtosecond (fs) laser pulses (120 fs, 800 nm, 1 kHz) were investigated under different laser fluence and pulse number. Unclassical ripples (U-ripples), which were nearly parallel to the polarization of the laser beam, were observed to form gradually on the top of classical ripples with the effective pulse number. Their periods were significantly longer than the laser wavelength, and increased with increasing both the laser fluence and pulse number in the current study. The relationship between the types of ripple patterns and their parametric dependence was established. The mechanism of U-ripple formation was attributed to the capillary wave, arising from the inhomogeneous temperature gradient combined with the electric field of the pulses in the molten surface layer.

  2. Simulated human eye retina adaptive optics imaging system based on a liquid crystal on silicon device

    Institute of Scientific and Technical Information of China (English)

    Jiang Bao-Guang; Cao Zhao-Liang; Mu Quan-Quan; Hu Li-Fa; Li Chao; Xuan Li

    2008-01-01

    In order to obtain a clear image of the retina of model eye, an adaptive optics system used to correct the wave-front error is introduced in this paper. The spatial light modulator that we use here is a liquid crystal on a silicon device instead of a conversional deformable mirror. A paper with carbon granule is used to simulate the retina of human eye. The pupil size of the model eye is adjustable (3-7 mm). A Shack-Hartman wave-front sensor is used to detect the wave-front aberration. With this construction, a value of peak-to-valley is achieved to be 0.086 λ, where A is wavelength.The modulation transfer functions before and after corrections are compared. And the resolution of this system after correction (691p/m) is very close to the diffraction limit resolution. The carbon granule on the white paper which has a size of 4.7μm is seen clearly. The size of the retina cell is between 4 and 10 μm. So this system has an ability to image the human eye's retina.

  3. Low-damage surface smoothing of laser crystallized polycrystalline silicon using gas cluster ion beam

    Science.gov (United States)

    Tokioka, H.; Yamarin, H.; Fujino, T.; Inoue, M.; Seki, T.; Matsuo, J.

    2007-04-01

    Surface smoothing of laser crystallized polycrystalline silicon (poly-Si) films using gas cluster ion beam (GCIB) technology has been studied. It is found that both SF6-GCIB and O2-GCIB decrease the height of hillocks and reduce the surface roughness of the irradiated films. The mean surface roughness value of poly-Si films was reduced from 10.8 nm to 2.8 nm by SF6-GCIB irradiation at 80°. Ultraviolet reflectance measurement reveals that GCIB irradiation causes damage near-surface of the poly-Si films. Formation of the damage, however, can be suppressed by using GCIB irradiation at high incident angle. Effect of GCIB irradiation in a metal-insulator-semiconductor (MIS) capacitor has also been investigated. The capacitance-voltage curves of MIS capacitor with SF6-GCIB irradiation are distorted. On the contrary, the distortion is reduced by O2-GCIB irradiation at 80, which suggests that electrical-activated damage of the films can be decreased by using O2-GCIB irradiation.

  4. Optical design of ultrashort throw liquid crystal on silicon projection system

    Science.gov (United States)

    Huang, Jiun-Woei

    2017-05-01

    An ultrashort throw liquid crystal on silicon (LCoS) projector for home cinema, virtual reality, and automobile heads-up display has been designed and fabricated. To achieve the best performance and highest-quality image, this study aimed to design wide-angle projection optics and optimize the illumination for LCoS. Based on the telecentric lens projection system and optimized Koehler illumination, the optical parameters were calculated. The projector's optical system consisted of a conic aspheric mirror and image optics using either symmetric double Gauss or a large-angle eyepiece to achieve a full projection angle larger than 155 deg. By applying Koehler illumination, image resolution was enhanced and the modulation transfer function of the image in high spatial frequency was increased to form a high-quality illuminated image. The partial coherence analysis verified that the design was capable of 2.5 lps/mm within a 2 m×1.5 m projected image. The throw ratio was less than 0.25 in HD format.

  5. Crack tip dislocations observed by TEM-tomography in silicon single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sadamatsu, Sunao; Tanaka, Masaki; Honda, Masaki; Higashida, Kenji, E-mail: sxdxmx@kyudai-mse.or [Department of Materials Science and Engineering, Kyushu University 744 Motooka, Fukuoka 819-0395 (Japan)

    2010-07-01

    3D observations of dislocations at a crack tip were attempted by transmission electron microscopy and computed tomography in order to reveal the 3D structure of dislocations emitted around a crack tip. {l_brace}011{r_brace} cracks were introduced into a (001) silicon single crystal wafer by using an indentation method at room temperature. The specimens indented were heated and kept at high temperatures to introduce dislocations from the crack tip. The specimen holder was tilted {+-}31{sup 0} by 2{sup 0} step and dislocation images were taken at every step. The diffraction vector was kept nearly 220 during the tilting operation. The Burgers vectors of the dislocation segments were determined, which included the signs of Burgers vectors. The dislocations observed here were those which accommodate mode II stress intensity around the crack tip. 3D observations using electron tomography reveal these complex crucial processes around the crack tip, which should contribute to understanding the dislocation process improving fracture toughness of crystalline materials.

  6. Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I.

    Science.gov (United States)

    Kohn, V G; Khikhlukha, D R

    2016-05-01

    This paper reports computer simulations of the transmitted-beam intensity distribution for the case of six-beam (000, 220, 242, 044, -224, -202) diffraction of X-rays in a perfect silicon crystal of thickness 1 mm. Both the plane-wave angular dependence and the six-beam section topographs, which are usually obtained in experiments with a restricted beam (two-dimensional slit), are calculated. The angular dependence is calculated in accordance with Ewald's theory. The section topographs are calculated from the angular dependence by means of the fast Fourier transformation procedure. This approach allows one to consider, for the first time, the transformation of the topograph's structure due to the two-dimensional slit sizes and the distance between the slit and the detector. The results are in good agreement with the results of other works and with the experimental data. This method of calculation does not require a supercomputer and it was performed on a standard laptop. A detailed explanation of the main features of the diffraction patterns at different distances between the slit and the detector is presented.

  7. Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission.

    Science.gov (United States)

    Ondič, L; Varga, M; Pelant, I; Valenta, J; Kromka, A; Elliman, R G

    2017-07-18

    Light extraction from a thin planar layer can be increased by introducing a two-dimensional periodic pattern on its surface. This structure, the so-called photonic crystal (PhC) slab, then not only enhances the extraction efficiency of light but can direct the extracted emission into desired angles. Careful design of the structures is important in order to have a spectral overlap of the emission with extraction (leaky) modes. We show that by fabricating PhC slabs with optimized dimensions from silicon nanocrystals (SiNCs) active layers, the extraction efficiency of vertical light emission from SiNCs at a particular wavelength can be enhanced ∼ 11 times compared to that of uncorrugated SiNCs-rich layer. More importantly, increased light emission can be obtained in a broad spectral range and, simultaneously, the extracted light can stay confined within relatively narrow angle around the normal to the sample plane. We demonstrate experimentally and theoretically that the physical origin of the enhancement is such that light originating from SiNCs first couples to leaky modes of the PhCs and is then efficiently extracted into the surrounding.

  8. Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.

  9. Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth

    Science.gov (United States)

    Daggolu, Parthiv; Ryu, Jae Woo; Galyukov, Alex; Kondratyev, Alexey

    2016-10-01

    With the use of 300 mm silicon wafers for industrial semiconductor device manufacturing, the Czochralski (Cz) crystal growth process has to be optimized to achieve higher quality and productivity. Numerical studies based on 2D global thermal models combined with 3D simulation of melt convection are widely used today to save time and money in the process development. Melt convection in large scale Cz Si growth is controlled by a CUSP or transversal magnetic field (MF) to suppress the melt turbulence. MF can be optimized to meet necessary characteristics of the growing crystal, in terms of point defects, as MF affects the melt/crystal interface geometry and allows adjustment of the pulling rate. Among the different knobs associated with the CUSP magnetic field, the nature of its configuration, going from symmetric to asymmetric, is also reported to be an important tool for the control of crystallization front. Using a 3D unsteady model of the CGSim software, we have studied these effects and compared with several experimental results. In addition, physical mechanisms behind these observations are explored through a detailed modeling analysis of the effect of an asymmetric CUSP MF on convection features governing the heat transport in the silicon melt.

  10. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices

    Science.gov (United States)

    Byrappa, Shayan M.

    Silicon Carbide [SiC] which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study: [1] Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defects have been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X-ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for

  11. Preferred orientation of n-hexane crystallized in silicon nanochannels: A combined x-ray diffraction and sorption isotherm study

    CERN Document Server

    Henschel, Anke; Hofmann, Tommy; Knorr, Klaus; Huber, Patrick; 10.1103/PhysRevE.79.032601

    2009-01-01

    We present an x-ray diffraction study on n-hexane in tubular silicon channels of approximately 10 nm diameter both as a function of the filling fraction f of the channels and as a function of temperature. Upon cooling, confined n-hexane crystallizes in a triclinic phase typical of the bulk crystalline state. However, the anisotropic spatial confinement leads to a preferred orientation of the confined crystallites, where the crystallographic direction coincides with the long axis of the channels. The magnitude of this preferred orientation increases with the filling fraction, which corroborates the assumption of a Bridgman-type crystallization process being responsible for the peculiar crystalline texture. This growth process predicts for a channel-like confinement an alignment of the fastest crystallization direction parallel to the long channel axis. It is expected to be increasingly effective with the length of solidifying liquid parcels and thus with increasing f. In fact, the fastest solidification front...

  12. Spatially-Resolved Crystallization of Amorphous Silicon Films on the Glass Substrate by Multi-beam Laser Interference

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Laser interference induced crystallization of amorphous silicon (a-Si) on the glass substrate was performed using a Q-switched Nd:YAG (yttrium aluminum garnet) laser. White light interferometer (WLI) and atomic force microscope (AFM) were used to characterize the morphology of the structured films, while X-ray diffraction (XRD), combined with the AFM, was used to analyse the crystalline structure of the film. The experimental results show that the laser energy density above a certain threshold, in the range of 400-500 mJ/cm2,triggers the patterned crystallizations which take the form similar to the laser intensity distribution. For the patterned crystallization under multipulse exposure, a definite polycrystalline structure with individual phases was observed by XRD. The difference in feature form, e.g., deepened craters or heightened lines, is related to the laser energy density relative to the threshold of evaporation of the material.

  13. Backscattering reduction of corner reflectors using SCS technique

    Science.gov (United States)

    Ajaikumar, V.; Jose, K. A.; Aanandan, C. K.; Mohanan, P.; Nair, K. G.

    1992-10-01

    The paper reports the use of a simulated corrugated surface (SCS) to reduce radar cross section of dihedral corner reflectors. The focus is on 90-deg corner reflectors, since they are involved in many targets and normally show an enhancement in RCS. The backscattering cross section of the dihedral corner reflector, which is large due to the mutual perpendicularity of the two flat surfaces, is found to be greatly reduced for TE polarization. This simple method is determined to be very effective in reducing the RCS of corner reflectors for any corner angle by suitably selecting the parameters of SCS. This may find potential use in strategic RCS reduction of targets in defense and space applications.

  14. RFID - based Staff Control System (SCS) in Kazakhstan

    Science.gov (United States)

    Saparkhojayev, N.

    2015-06-01

    RFID - based Staff Control System (SCS) will allow complete hands-free access control, monitoring the whereabouts of employee and record the attendance of the employee as well. Moreover, with a help of this system, it is possible to have a nice report at the end of the month and based on the total number of worked hours, the salary will be allocated to each personnel. The access tag can be read up to 10 centimeters from the RFID reader. The proposed system is based on UHF RFID readers, supported with antennas at gate and transaction sections, and employee identification cards containing RFID-transponders which are able to electronically store information that can be read / written even without the physical contact with the help of radio medium. This system is an innovative system, which describes the benefits of applying RFID- technology in the Education System process of Republic of Kazakhstan. This paper presents the experiments conducted to set up RFID based SCS.

  15. Effect of heat treatments in the silicon eutectic crystal evolution in Al-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Forn, A.; Baile, M.T.; Martin, E.; Ruperez, E. [Light Alloys and Surface Treatments Design Centre (CDAL), Univ. Politecnica de Catalunya, Vilanova I la Geltru (Spain)

    2005-07-01

    This paper describes the heat treatment effect on the eutectic silicon evolution in the A357 alloy, obtained by semisolid forming process (SSM). The coarsening rate of the silicon was determined by image analysis technique in specimens from rheocasting ingots and thixocasting components. The study was realized in the temperature range from 450 to 550 C by applying heating times between 1 and 24 hours. The results show that during the heat treatment the coarsening and sphereodization of the silicon particles is produced and the fragmentation stages, which are observed in conventional alloys, do not appear. Kinetic silicon growth has been adjusted to the Oswald's ripening equation. (orig.)

  16. Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells.

    Science.gov (United States)

    Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

    2012-04-01

    Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation.

  17. Measuring Learned Resourcefulness in College Students: Factor Structure of the Self-Control Schedule (SCS)

    Science.gov (United States)

    McWhirter, Benedict T.; Burrow-Sanchez, Jason J.; Townsend, Katesy C.

    2008-01-01

    Rosenbaum's Self-Control Schedule (SCS) has been used as a unidimensional measure of Learned Resourcefulness (LR) in previous research. In this study we clarified the factor structure of the SCS among college students (N = 583) by conducting a principal axis factor analysis with oblique (Oblimin) rotation on the SCS. Results revealed a…

  18. 11% efficient single-crystal solar cells and 10% efficient polycrystalline cells made from refined metallurgical silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanoka, J.I.; Strock, H.B.; Kotval, P.S.

    1981-09-01

    Refined metallurgical silicon has been utilized as a feedstock material both for Czochralski-pulled single crystal and for cast polycrystalline silicon solar cells. Using a phosphorous diffused junction for an n on p structure, the single-crystal cells have yielded AM1 efficiencies up to 11.1%, open circuit voltages up to 596 mV, and fill factors as high as 81% (not all on the same cell). The cast polycrystalline substrates have produced cells up to 10.1% efficient (AM1) with fill factors of 79% and V/sub o/c = 585 mV. Properties of the single-crystal and polycrystalline cells are quite similar, with the principal limiting factor being J/sub s/c , which is typically 20--23 mA/cm/sup 2/. Spectral response and EBIC data indicate that a considerable amount of the recombination is due to impurities. For the cast polycrystalline cells, the electron beam induced current data shows that grain boundary recombination is significant.

  19. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    Science.gov (United States)

    Zhang, Xingyu; Chakravarty, Swapnajit; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T.

    2015-11-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.

  20. Microheater-integrated silicon coupled photonic crystal microcavities for low-power thermo-optic switching over a wide spectrum

    Science.gov (United States)

    Zhang, Xingyu; Chakravarty, Swapnajit; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T.

    2016-03-01

    We design, fabricate and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and antibonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20dB, an on-off switching power of 18.2mW, a therm-optic tuning efficiency of 0.63nm/mW, a rise time of 14.8μsec and a fall time of 18.5μsec. The measured on-chip loss on the transmission band is as low as 1dB.

  1. Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540 mV open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Experimental Physics I, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau (Germany); Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Jia, Guobin; Falk, Fritz [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany)

    2014-07-01

    Polycrystalline silicon thin film solar cells on a glass substrate are investigated. The solar cell layer structure was generated by a two-step process in which first a 100–600 nm thin seed layer is formed by diode laser crystallization of electron beam evaporated amorphous silicon. In a second step this layer is epitaxially thickened to 2–3.5 μm by layered laser crystallization. In this process further amorphous silicon is deposited and in situ repeatedly is irradiated by excimer laser pulses. The polycrystalline layer consists of grains several hundreds of microns long and several tens of microns wide and it contains a p{sup +}–p–n{sup +} doping profile. After deposition a rapid thermal annealing and hydrogen passivation steps follow. The back and front contacts are prepared after mesa structuring. The influence of the seed layer thickness on the solar cell performance was investigated. In addition, the absorber contamination due to the background pressure during absorber deposition and its influence on the short circuit current density was investigated. The best parameters reached for various solar cells are 540 mV open circuit voltage, 20.3 mA/cm{sup 2} short circuit current density (without light trapping), 75% fill factor, and 5.2% efficiency. - Highlights: • Layered laser crystallization leads to grain sizes of 10–300 μm on glass. • Open circuit voltage of 540 mV and efficiency of 5.2% are achieved. • Short circuit current is influenced by background pressure during deposition. • Short circuit current density of 20.3 mA/cm{sup 2} is reached without light trapping. • Progress requires pressures below 10{sup −7} hPa and deposition rates over 100 nm/min.

  2. Design and analysis of polarization independent all-optical logic gates in silicon-on-insulator photonic crystal

    Science.gov (United States)

    Rani, Preeti; Kalra, Yogita; Sinha, R. K.

    2016-09-01

    In this paper, we have reported design and analysis of polarization independent all optical logic gates in silicon-on-insulator photonic crystal consisting of two dimensional honeycomb lattices with two different air holes exhibiting photonic band gap for both TE and TM mode in the optical communication window. The proposed structures perform as an AND optical logic gate and all the optical logic gates based on the phenomenon of interference. The response period and bit rate for TE and TM polarizations at a wavelength of 1.55 μm show improved results as reported earlier.

  3. Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond

    CERN Document Server

    Riedrich-Möller, Janine; Pauly, Christoph; Mücklich, Frank; Fischer, Martin; Gsell, Stefan; Schreck, Matthias; Becher, Christoph

    2014-01-01

    Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.

  4. Adaptive Optics with a Liquid-Crystal-on-Silicon Spatial Light Modulator and Its Behavior in Retinal Imaging

    Science.gov (United States)

    Shirai, Tomohiro; Takeno, Kohei; Arimoto, Hidenobu; Furukawa, Hiromitsu

    2009-07-01

    An adaptive optics system with a brand-new device of a liquid-crystal-on-silicon (LCOS) spatial light modulator (SLM) and its behavior in in vivo imaging of the human retina are described. We confirmed by experiments that closed-loop correction of ocular aberrations of the subject's eye was successfully achieved at the rate of 16.7 Hz in our system to obtain a clear retinal image in real time. The result suggests that an LCOS SLM is one of the promising candidates for a wavefront corrector in a prospective commercial ophthalmic instrument with adaptive optics.

  5. Experimental observation of optical bandgaps for surface electromagnetic waves in a periodically corrugated one-dimensional silicon nitride photonic crystal.

    Science.gov (United States)

    Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Michelotti, Francesco

    2008-02-01

    Dispersion curves of surface electromagnetic waves (SEWs) in 1D silicon nitride photonic crystals having periodic surface corrugations are considered. We experimentally demonstrate that a bandgap for SEWs can be obtained by fabricating a polymeric grating on the multilayered structure. Close to the boundary of the first Brillouin zone connected to the grating, we observe the splitting of the SEW dispersion curve into two separate branches and identify two regions of very low group velocity. The proper design of the structure allows the two folded branches to lie beyond the light line in a wide spectral range, thus doubling the density of modes available for SEWs and avoiding light scattering.

  6. Design and Performance Evaluation of Optical Ethernet Switching Architecture with Liquid Crystal on Silicon-Based Beam-Steering Technology

    Science.gov (United States)

    Cheng, Yuh-Jiuh; Chou, H.-H.; Shiau, Yhi; Cheng, Shu-Ying

    2016-07-01

    A non-blocking optical Ethernet switching architecture with liquid crystal on a silicon-based beam-steering switch and optical output buffer strategies are proposed. For preserving service packet sequencing and fairness of routing sequence, priority and round-robin algorithms are adopted at the optical output buffer in this research. Four methods were used to implement tunable fiber delay modules for the optical output buffers to handle Ethernet packets with variable bit-rates. The results reported are based on the simulations performed to evaluate the proposed switching architecture with traffic analysis under a traffic model captured from a real-core network.

  7. Channeling and Radiation of Electrons in Silicon Single Crystals and Si1−xGex Crystalline Undulators

    DEFF Research Database (Denmark)

    Backe, H.; Krambrich, D.; Lauth, W.

    2013-01-01

    potential of the silicon single crystals. Radiation from a crystalline undulator, produced at the Aarhus University (UAAR), has been investigated at the Mainz Microtron electron accelerator facility MAMI. The 4-period epitaxially grown strained layer Si1−xGex undulator had a period length λu = 9.9 μm....... At a beam energy of 375 MeV a broad excess yield around the theoretically expected photon energy of 0.132 MeV has been observed. Model calculations on the basis of synchrotron-like radiation emission suggest that evidence for a weak undulator effect has been observed....

  8. Dual-plane in-line digital holography based on liquid crystal on silicon spatial light modulator.

    Science.gov (United States)

    Panezai, Spozmai; Wang, Dayong; Zhao, Jie; Wang, Yunxin; Rong, Lu

    2014-09-20

    A dual-plane in-line digital holographic method is proposed with a liquid crystal on silicon (LCOS) spatial light modulator (SLM) for recording holograms at two slightly displaced planes. The computer-generated chirp-like complex reflectance is displayed on the LCOS SLM to adapt the object beam at two planes for recording two holograms processed to eliminate the DC term and twin image accurately; no mechanical components or manual operation during data acquisition is required. The proposed approach improves the speed, accuracy, and stability of the experiment. Computer simulation and experiments for both amplitude and phase objects are carried out to validate the proposed method.

  9. Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C

    Science.gov (United States)

    He, Ming; Ishihara, Ryoichi; Neihof, Ellen J. J.; van Andel, Yvonne; Schellevis, Hugo; Metselaar, Wim; Beenakker, Kees

    2007-03-01

    Large polycrystalline silicon (poly-Si) grains with a diameter of 1.8 μm are successfully prepared by excimer laser crystallization (ELC) of a sputtered amorphous silicon (α-Si) film at a maximum process temperature of 100 °C. By pulsed DC magnetron sputtering, α-Si is deposited on a non-structured oxidized wafer. It is found that the α-Si film deposited with a bias is easily ablated during ELC, even at an energy density below the super lateral growth (SLG) region. However, the α-Si film deposited without a bias can endure an energy density well beyond the SLG region without ablation. This zero-bias sputtered α-Si film with a high compressive stress has a low Ar content and a high density, which is beneficial for the suppression of ablation. Large grains with a petal-like shape can be obtained in a wide energy density window, which can be a result from some fine crystallites in the α-Si matrix. These large grains with a low process temperature are promising for the direct formation of system circuits as well as a high-quality display on a plastic foil.

  10. First observation of multiple volume reflection by different planes in one bent silicon crystal for high-energy protons

    CERN Document Server

    Scandale, E; Bagli, E; Baricordi, S; Dalpiaz, P; Fiorini, M; Guidi, V; Mazzolari, A; Vincenzi, D; Milan, R; Della Mea, Gianantonio; Vallazza, E; Afonin, A G; Chesnokov, Yu A; Maisheev, V A; Yazynin, I A; Golovatyuk, V M; Kovalenko, A D; Taratin, A M; Denisov, A S; Gavrikov, Yu A; Ivanov, Yu M; Lapina, L P; Malyarenko, L G; Skorobogatov, V V; Suvorov, V M; Vavilov, S A; Bolognini, D; Hasan, S; Mattera, A; Prest, M; Tikhomirovl, V V

    2009-01-01

    Multiple volume reflection by different planes in a bent silicon crystal with its 111 axis orientation close to the beam direction was observed for the first time for 400 GeV/c protons at the CERN SPS. The proton beam was deflected to the side opposite to the crystal bend by an angle of about 67 μrad, which is five times larger than in a single volume reflection by the (110) bent planes. The registered efficiency of one side deflection was about 84%. It was shown that multiple volume reflection transforms to a single volume reflection when the orientation angle of the 111 axis relative to the beam direction is increased

  11. Comparison of slowness profiles of lamb wave with elastic moduli and crystal structure in single crystalline silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Min, Young Jae; Yun, Gyeong Won; Kim, Kyung Min; Roh, Yuji; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan (Korea, Republic of)

    2016-02-15

    Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

  12. Two-axis MEMS scanner with transfer-printed high-reflectivity, broadband monolithic silicon photonic crystal mirrors.

    Science.gov (United States)

    Jeong, Jae-Woong; Park, Bryan; Keum, Hohyun; Kim, Seok; Rogers, John A; Solgaard, Olav

    2013-06-03

    We present a two-axis electrostatic MEMS scanner with high-reflectivity monolithic single-crystal-silicon photonic crystal (PC) mirrors suitable for applications in harsh environments. The reflective surfaces of the MEMS scanner are transfer-printed PC mirrors with low polarization dependence, low angular dependence, and reflectivity over 85% in the wavelength range of 1490nm~1505nm and above 90% over the wavelength band of 1550~1570nm. In static mode, the scanner has total scan range of 10.2° on one rotation axis and 7.8° on the other. Dynamic operation on resonance increase the scan range to 21° at 608Hz around the outer rotation axis and 9.5° at 1.73kHz about the inner rotation axis.

  13. Performance of a monolithic LaBr{sub 3}:Ce crystal coupled to an array of silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Ulyanov, Alexei, E-mail: alexey.uliyanov@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Morris, Oran [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Computer Science & Applied Physics, Galway-Mayo Institute of Technology, Galway (Ireland); Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Nelms, Nick; Shortt, Brian [European Space Agency, ESTEC, 2200 AG Noordwijk (Netherlands); Slavicek, Tomas; Granja, Carlos; Solar, Michael [Institute of Experimental and Applied Physics, Czech Technical University in Prague, 12800 Prague 2 (Czech Republic)

    2016-02-21

    A gamma-ray detector composed of a single 28×28×20 mm{sup 3} LaBr{sub 3}:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

  14. Experimental investigation of energy localization in line-defect resonator based on silicon locally resonant phononic crystal

    Science.gov (United States)

    Jiang, Wanli; Feng, Duan; Xu, Dehui; Xiong, Bin; Wang, Yuelin

    2016-10-01

    In this paper, energy localization in line-defect resonator based on locally resonant phononic crystal (PnC) is experimentally studied. The defected resonator is realized by creating line defects on a two-dimension (2-D) silicon PnC. The silicon resonator was fabricated by micro machining process and tested by a combination of the fluid coupling method and Laser Doppler Vibrometer (LDV). Acoustic waves with frequency range from 7.19 MHz to 7.50 MHz are trapped in the cavity, and the corresponding resonant modes are observed in-situ. The measured quality (Q) factor of the resonator, which is 427 at its resonant frequency of 7.3 MHz, is smaller than the simulated ones (666 and 5135). The experimental results agree well with the simulation results that frequencies of the trapped acoustic waves of are mostly in the range of the phononic bandgaps. The locally resonant based PnC resonator in paper with 17 dB magnitude amplification, which is normalized with respect to the transmission of a freestanding silicon slab in the same frequency range, has great potential in energy harvesting or sound concentration.

  15. An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector

    Institute of Scientific and Technical Information of China (English)

    MIAO Feng-Juan; ZHANG Jie; XU Shao-Hui; WANG Lian-Wei; CHU Jun-Hao; CAO Zhi-Shen; ZHAN Peng; WANG Zhen-Lin

    2009-01-01

    @@ With the aid of photolithography, an array of one-dimensional porous silicon photonic crystal reflector islands for a far infrared image detector ranging from 10μm to 14μm is successfully fabricated. Silicon nitride formed by low pressure chemical vapor deposition (LPCVD) was used as the masking layer for the island array formation. After etching, the microstructures were examined by a scanning electron microscope and the optical properties were studied by Fourier transform infrared spectroscopy, the result indicates that the multilayer structure could be obtained in the perpendicular direction via periodically alternative etching current in each pre-patteru. At the same time, the island array has a well-proportioned lateral etching effect, which is very useful for the thermal isolation in lateral orientation of the application in devices. It is concluded that regardless of the absorption of the deposition layer on the substrate, the localized photonic crystalline islands have higher reflectivity. The designed islands structure not only prevents the cracking of the porous silicon layers but is also useful for the application in the cold part for the sensor devices and the interconnection of each pixel.

  16. Radiation hardness test of un-doped CsI crystals and Silicon Photomultipliers for the Mu2e calorimeter

    CERN Document Server

    Baccaro, Stefania; Cordelli, Marco; Diociaiuti, Eleonora; Donghia, Raffaella; Giovannella, Simona; Loreti, Stefano; Miscetti, Stefano; Pillon, Mario; Sarra, Ivano

    2016-01-01

    The Mu2e calorimeter is composed by 1400 un-doped CsI crystals coupled to large area UV extended Silicon Photomultipliers arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position. It should also be fast enough to handle the high rate background and it must operate and survive in a high radiation environment. Simulation studies estimated that, in the hottest regions, each crystal will absorb a dose of 300 Gy and will be exposed to a neutron fluency of 6 x 10^{11} n/cm^2 in 3 years of running. Test of un-doped CsI crystals irradiated up to 900 Gy and to a neutron fluency up to 9 x 10^{11} n/cm^2 have been performed at CALLIOPE and FNG ENEA facilities in Italy. We present our study on the variation of light yield (LY) and longitudinal response uniformity (LRU) of these crystals after irradiation. The ionization dose does not modify LRU while a 20% reduction in LY is observed at 900 Gy. Similarly, the neutron flux causes an acceptable LY deterioration (<...

  17. Direct detection of transcription factors in cotyledons during seedling development using sensitive silicon-substrate photonic crystal protein arrays.

    Science.gov (United States)

    Jones, Sarah I; Tan, Yafang; Shamimuzzaman, Md; George, Sherine; Cunningham, Brian T; Vodkin, Lila

    2015-03-01

    Transcription factors control important gene networks, altering the expression of a wide variety of genes, including those of agronomic importance, despite often being expressed at low levels. Detecting transcription factor proteins is difficult, because current high-throughput methods may not be sensitive enough. One-dimensional, silicon-substrate photonic crystal (PC) arrays provide an alternative substrate for printing multiplexed protein microarrays that have greater sensitivity through an increased signal-to-noise ratio of the fluorescent signal compared with performing the same assay upon a traditional aminosilanized glass surface. As a model system to test proof of concept of the silicon-substrate PC arrays to directly detect rare proteins in crude plant extracts, we selected representatives of four different transcription factor families (zinc finger GATA, basic helix-loop-helix, BTF3/NAC [for basic transcription factor of the NAC family], and YABBY) that have increasing transcript levels during the stages of seedling cotyledon development. Antibodies to synthetic peptides representing the transcription factors were printed on both glass slides and silicon-substrate PC slides along with antibodies to abundant cotyledon proteins, seed lectin, and Kunitz trypsin inhibitor. The silicon-substrate PC arrays proved more sensitive than those performed on glass slides, detecting rare proteins that were below background on the glass slides. The zinc finger transcription factor was detected on the PC arrays in crude extracts of all stages of the seedling cotyledons, whereas YABBY seemed to be at the lower limit of their sensitivity. Interestingly, the basic helix-loop-helix and NAC proteins showed developmental profiles consistent with their transcript patterns, indicating proof of concept for detecting these low-abundance proteins in crude extracts.

  18. Influence of Polymer Coatings on the Carrier Life Time in Solar Silicon Crystals

    OpenAIRE

    L.P. Steblenko; A.O. Podolyan; O.O. Korotchenkov; L.M. Yashchenko; S.M. Naumenko; D.V. Kalinichenko; Yu.L. Kobzar; A.M. Kuryliuk; V.M. Kravchenko

    2014-01-01

    Influence of polymer coatings on the photovoltage drop kinetics in solar Si crystals exposed to magnetic field action and X-ray irradiation is studied. The features found in the behavior of the electrophysical parameters suggest slowing down the photovoltage drop in the presence of polymer coatings at the surface of solar Si crystals. These features may be due to the influence of polymer coatings to reduce the concentration of recombination centers in crystals solar-Si.

  19. Influence of Polymer Coatings on the Carrier Life Time in Solar Silicon Crystals

    Directory of Open Access Journals (Sweden)

    L.P. Steblenko

    2014-11-01

    Full Text Available Influence of polymer coatings on the photovoltage drop kinetics in solar Si crystals exposed to magnetic field action and X-ray irradiation is studied. The features found in the behavior of the electrophysical parameters suggest slowing down the photovoltage drop in the presence of polymer coatings at the surface of solar Si crystals. These features may be due to the influence of polymer coatings to reduce the concentration of recombination centers in crystals solar-Si.

  20. Optimizing seeded casting of mono-like silicon crystals through numerical simulation

    Science.gov (United States)

    Black, Andrés; Medina, Juan; Piñeiro, Axa; Dieguez, Ernesto

    2012-08-01

    Recently, silicon ingots produced by typical multicrystalline casting systems but having monocrystalline features are entering the photovoltaic market. In order to look into the particular properties of this novel method, the normal silicon casting process is numerically simulated, and compared to an optimized mono-like casting process, based on the use of oriented monocrystalline silicon seeds. The seeding process was optimized by reducing the time spent in the melt in order to reduce the back diffusion of harmful non-feedstock metal impurities such as iron, reducing the thermomechanical stress to avoid dislocation multiplication, and decreasing the overall interface curvature. Additionally, the growth conditions in the zone just above the seeds were fine-tuned to increase the production of vacancy point defects, in the hope of achieving "vacancy passivation" of harmful interstitial iron by moving it to substitutional position.

  1. Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers

    Science.gov (United States)

    Malladi, Machara Krishna Girish

    Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H+(range: 850 nm; dose: 1.5x1016 cm-2) and Ni+ (range: 60 nm; dose: 2x10 15 cm-2). Following annealing, the H implanted region populated with Ni nanoparticles of size ( 10-25 nm) and density ( 1011/cm2) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 ?C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a defect-free crystalline Si layer exhibit a very high magnetic switching energy barrier of 0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment. The electrical transport properties of the samples exhibiting room temperature ferromagnetism have been measured in an in-plane magnetic field and these samples show a high room temperature magnetoresistance ( 155% at 9T for p-Si and 80% at 9T for n-Si) which is dependent on the temperature and the applied current. The peak in the magnetoresistance occurs in the ohmic regime

  2. Monolithic LaBr₃:Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography.

    Science.gov (United States)

    Seifert, Stefan; van Dam, Herman T; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R

    2012-04-21

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high γ-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays. Here, we present the characterization of a detector consisting of a 18.0 mm×16.2 mm×10.0 mm monolithic LaBr₃:5%Ce scintillator directly coupled to a 4×4 array of silicon photomultipliers. An energy resolution of 6.4% full-width-at-half-maximum (FWHM) was obtained. The point-spread-function (PSF) was determined for different regions of the detector. The full-width-at-half-maximum (FWHM) of the PSF was measured to be <1.5 mm at the center of the detector and <1.7 mm averaged over the entire crystal. Both values are not corrected for the ~0.6 mm FWHM test beam diameter. Furthermore, the influence of edge effects was investigated. We found that near the edges of the detector the spatial resolution degrades to 2.2 mm (FWHM), and a bias in the position estimates, up to 1.5 mm, was observed. Moreover, the coincidence resolving time for two identical detectors in coincidence was measured to be as small as ~198 ps FWHM.

  3. Fundamentals of phase-only liquid crystal on silicon (LCOS) devices

    National Research Council Canada - National Science Library

    Zhang, Zichen; You, Zheng; Chu, Daping

    2014-01-01

    ... and corresponding electro-optic effects in such devices. Attention is focused on the essential requirements of the physical aspects of the LC layer as well as the indispensable parameters for the response time of the device. Furthermore, the basic functionalities embedded in the complementary metal oxide semiconductor (CMOS) silicon backplan...

  4. Focused Ion Beam Milling Strategies of Photonic Crystal Structures in Silicon

    NARCIS (Netherlands)

    Hopman, Wico C.L.; Ay, Feridun; Hu, Wenbin; Gadgil, Vishwas J.; Kuipers, Laurens; Pollnau, Markus; Ridder, de René M.

    2007-01-01

    We report on optimisation of the side wall angle of focused ion beam (FIB) fabricated submicron diameter holes in silicon. Two optimisation steps were performed. First, we compare two different FIB scanning procedures and show the advantages of using a spiral scanning method for the definition of ho

  5. Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

    Science.gov (United States)

    Gao, B.; Jiptner, K.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

    2015-02-01

    Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

  6. SCS118 Marques – New rice cultivar obtained through induced mutation

    Directory of Open Access Journals (Sweden)

    Moacir Antonio Schiocchet

    2014-03-01

    Full Text Available The new rice cultivar, SCS118 Marques, was obtained through gamma irradiation of SCSBRS Tio Taka cultivar. SCS118 Marques presents modern architecture, lodging resistance, late maturity cycle, moderate resistance to blast, high yield potential, long grains and very high cooking quality. Industrial tests performed with SCS118 Marques showed that grains are suitable for parboiling and white rice, and it is recommended to all rice-producing regions of Santa Catarina

  7. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  8. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  9. The Influence of Nanofilled Polymer Coatings and Magnetic Field on the Decay Kinetics of Photovoltage in Silicon Crystals Used in Solar Energy

    Directory of Open Access Journals (Sweden)

    L.P. Steblenko

    2015-06-01

    Full Text Available The influence of a weak stationary magnetic field on the kinetics of photovoltage decay in "solar" silicon crystals (solar-Si with nanofilled polymer coatings is studied. The characteristic features of magnetostimulated change of carrier lifetime depending on the concentration and the method of forming the nanofillers in the polymer matrix are established.

  10. All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

    KAUST Repository

    Savvin, Aleksandr D.

    2011-03-01

    A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

  11. Intraseasonal variability of the subsurface temperature observed in the South China Sea (SCS)

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Using Morlet wavelet transform we investigated the intraseasonal variability of the subsurface temperature in the SCS by analyzing ATLAS mooring data obtained during the South China Sea Monsoon Experiment (SCSMEX). It is found for the first time that subsurface temperature in the SCS exists intraseasonal variability, particularly in winter. The strongest intraseasonal variability ranges from 50 to 100 m with its maximum amplitude about 1.0--2.0℃. The subsurface temperature intraseasonal variability in the SCS is primarily induced by local wind stress curl via adjusting the vertical displacement of thermocline. It reveals the important characteristic of intraseasonal variations in the SCS upper ocean vertically.

  12. MICROSTRUCTURING OF SILICON SINGLE CRYSTALS BY FIBER LASER IN HIGH-SPEED SCANNING MODE

    Directory of Open Access Journals (Sweden)

    T. A. Trifonova

    2015-11-01

    Full Text Available Subject of Study. The surface structure of the silicon wafers (substrate with a thermally grown silicon dioxide on the surface (of SiO2/Si is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111 with the source (natural silicon dioxide (SiO2 with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100 with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film

  13. Electron gas polarization effect induced by heavy H-like ions of moderate velocities channeled in a silicon crystal

    CERN Document Server

    Dauvergne, D; Bosch, F; Bräuning, H; Chevallier, M; Cohen, C; Gumberidze, A; Hagmann, S; L'Hoir, A; Kirsch, R; Kozhuharov, C; Liesen, D; Mokler, P H; Poizat, J C; Ray, C; Rozet, J P; Stöhlker, T; Toleikis, S; Toulemonde, M; Verma, P; St\\"{o}hlker, Th.

    2006-01-01

    We report on the observation of a strong perturbation of the electron gas induced by 20 MeV/u U$^{91+}$ ions and 13 MeV/u Pb$^{81+}$ ions channeled in silicon crystals. This collective response (wake effect) in-duces a shift of the continuum energy level by more than 100 eV, which is observed by means of Radiative Electron Capture into the K and L-shells of the projectiles. We also observe an increase of the REC probability by 20-50% relative to the probability in a non-perturbed electron gas. The energy shift is in agreement with calculations using the linear response theory, whereas the local electron density enhancement is much smaller than predicted by the same model. This shows that, for the small values of the adiabaticity parameter achieved in our experiments, the density fluctuations are not strongly localized at the vicinity of the heavy ions.

  14. Characterization of a parallel aligned liquid crystal on silicon and its application on a Shack-Hartmann sensor

    Science.gov (United States)

    Lobato, L.; Márquez, A.; Lizana, A.; Moreno, I.; Iemmi, C.; Campos, J.

    2010-08-01

    In this paper, the characterization and the optimization of a parallel aligned (PA) liquid crystal on silicon display (LCoS) has been conducted with the aim to apply it to the generation of a microlenses array in a Shack-Hartmann (SH) sensor. The entire sensor setup has been experimentally implemented from scratch. Results obtained for several aberrated wavefront measurements show the suitability of these devices in this particular application. Due to the well-known dynamic properties of LCoS, these devices allow for an easy choice of the parameters of the SH sensor, i.e. the selection of the suitable focal length and aperture of the microlenses of the array, which will definitely determine the dynamic range and the lateral resolution of the SH sensor.

  15. Enhanced four-wave-mixing effects by large group indices of one-dimensional silicon photonic crystal waveguides.

    Science.gov (United States)

    Kim, Dong Wook; Kim, Seung Hwan; Lee, Seoung Hun; Jong, Heung Sun; Lee, Jong-Moo; Lee, El-Hang; Kim, Kyong Hon

    2013-12-02

    Enhanced four-wave-mixing (FWM) effects have been observed with the help of large group-indices near the band edges in one-dimensional (1-D) silicon photonic crystal waveguides (Si PhCWs). A significant increase of the FWM conversion efficiency of about 17 dB was measured near the transmission band edge of the 1-D PhCW through an approximate 3.2 times increase of the group index from 8 to 24 with respect to the central transmission band region despite a large group-velocity dispersion. Numerical analyses based on the coupled-mode equations for the degenerated FWM process describe the experimentally measured results well. Our results indicate that the 1-D PhCWs are good candidates for large group-index enhanced nonlinearity devices even without having any special dispersion engineering.

  16. Efficient continuous-wave nonlinear frequency conversion in high-Q Gallium Nitride photonic crystal cavities on Silicon

    CERN Document Server

    Mohamed, Mohamed Sabry; Carlin, Jean-François; Minkov, Momchil; Gerace, Dario; Savona, Vincenzo; Grandjean, Nicolas; Galli, Matteo; Houdré, Romuald

    2016-01-01

    We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4$\\times10^{4}$, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving normalized conversion efficiency of 2.4$\\times10^{-3}$ $W^{-1}$, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  17. Electron gas polarization effect induced by heavy H-like ions of moderate velocities channeled in a silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Testa, E. [Institut de Physique Nucleaire de Lyon, CNRS-IN2P3, Universite Claude Bernard Lyon 1, F-69622 Villeurbanne (France); Dauvergne, D. [Institut de Physique Nucleaire de Lyon, CNRS-IN2P3, Universite Claude Bernard Lyon 1, F-69622 Villeurbanne (France)]. E-mail: d.dauvergne@ipnl.in2p3.fr; Braeuning-Demian, A. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); Bosch, F. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); Braeuning, H. [Institut fuer Kernphysik, Justus Liebig Universitaet, D-35392 Giessen (Germany); Chevallier, M. [Institut de Physique Nucleaire de Lyon, CNRS-IN2P3, Universite Claude Bernard Lyon 1, F-69622 Villeurbanne (France); Cohen, C. [Institut des Nano-Sciences de Paris, CNRS-UMR75-88, Universites Paris VI et Paris VII, 75251 Paris cedex 05 (France); Gumberidze, A. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); Hagmann, S. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); L' Hoir, A. [Institut des Nano-Sciences de Paris, CNRS-UMR75-88, Universites Paris VI et Paris VII, 75251 Paris cedex 05 (France); Kirsch, R. [Institut de Physique Nucleaire de Lyon, CNRS-IN2P3, Universite Claude Bernard Lyon 1, F-69622 Villeurbanne (France); Kozhuharov, C.; Liesen, D.; Mokler, P.H. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); Poizat, J.-C.; Ray, C. [Institut de Physique Nucleaire de Lyon, CNRS-IN2P3, Universite Claude Bernard Lyon 1, F-69622 Villeurbanne (France); Rozet, J.-P. [Institut des Nano-Sciences de Paris, CNRS-UMR75-88, Universites Paris VI et Paris VII, 75251 Paris cedex 05 (France); Stoehlker, Th.; Toleikis, S. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany); Toulemonde, M. [Centre Interdisciplinaire de Recherche Ions-Lasers, UMR 11, CEA-CNRS, 14040 Caen cedex (France); Verma, P. [Gesellschaft fuer Schwerionen Forschung (GSI), D-64291 Darmstadt (Germany)

    2006-04-15

    We report on the observation of a strong perturbation of the electron gas induced by 20 MeV/u U{sup 91+} ions and 13 MeV/u Pb{sup 81+} ions channeled in silicon crystals. This collective response (wake effect) induces a shift of the continuum energy level by more than 100 eV, which is observed by means of radiative electron capture into the K- and L-shells of the projectiles. We also observe an increase of the REC probability by 20-50% relative to the probability in a non-perturbed electron gas. The energy shift is in agreement with calculations using the linear response theory, whereas the local electron density enhancement is much smaller than predicted by the same model. This shows that, for the small values of the adiabaticity parameter achieved in our experiments, the density fluctuations are not strongly localized in the vicinity of the heavy ions.

  18. Optical Effects Accompanying the Dynamical Bragg Diffraction in Linear 1D Photonic Crystals Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Anton Maydykovskiy

    2014-10-01

    Full Text Available We survey our recent results on the observation and studies of the effects accompanying the dynamical Bragg diffraction in one-dimensional photonic crystals (PhC. Contrary to the kinematic Bragg diffraction, the dynamical one considers a continuous interaction between the waves travelling within a spatially-periodic structure and is the most pronounced in the so called Laue geometry, leading to a number of exciting phenomena. In the described experiments, we study the PhC based on porous silicon or porous quartz, made by the electrochemical etching of crystalline silicon with the consequent thermal annealing. Importantly, these PhC are approximately hundreds of microns thick and contain a few hundreds of periods, so that the experiments in the Laue diffraction scheme are available. We discuss the effect of the temporal splitting of femtosecond laser pulses and show that the effect is quite sensitive to the polarization and the phase of a femtosecond laser pulse. We also show the experimental realization of the Pendular effect in porous quartz PhC and demonstrate the experimental conditions for the total spatial switching of the output radiation between the transmitted and diffracted directions. All described effects are of high interest for the control over the light propagation based on PhC structures.

  19. Quasi-periodic Fibonacci and periodic one-dimensional hypersonic phononic crystals of porous silicon: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Gazi N., E-mail: g.aliev@bath.ac.uk; Goller, Bernhard [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-09-07

    A one-dimensional Fibonacci phononic crystal and a distributed Bragg reflector were constructed from porous silicon. The structures had the same number of layers and similar acoustic impedance mismatch, and were electrochemically etched in highly boron doped silicon wafers. The thickness of the individual layers in the stacks was approximately 2 μm. Both types of hypersonic band gap structure were studied by direct measurement of the transmittance of longitudinal acoustic waves in the 0.1–2.6 GHz range. Acoustic band gaps deeper than 50 dB were detected in both structures. The experimental results were compared with model calculations employing the transfer matrix method. The acoustic properties of periodic and quasi-periodic structures in which half-wave retarding bi-layers do not consist of two quarter-wave retarding layers are discussed. The strong correlation between width and depth of gaps in the transmission spectra is demonstrated. The dominant mechanisms of acoustic losses in porous multilayer structures are discussed. The elastic constants remain proportional over our range of porosity, and hence, the Grüneisen parameter is constant. This simplifies the expression for the porosity dependence of the Akhiezer damping.

  20. Enhancement of Light Absorption in Thin Film Silicon Solar Cells with Metallic Grating and One-Dimensional Photonic Crystals

    Institute of Scientific and Technical Information of China (English)

    ZHENG Gai-Ge; XIAN Feng-Lin; LI Xiang-Yin

    2011-01-01

    We design an effective light trapping scheme through engineering metallic gratings and one-dimensional dielectric photonic crystals (PhCs) to increase the optical path length of light within the solar cells. This incorporation can result in broadband optical absorption enhancement not only for transverse magnetic polarized light but also for transverse-electric polarization. Even when no plasmonic mode can be excited, due to the high reflection of the PhCs, the absorption in the active region can still be enhanced. Rigorous coupled wave analysis results demonstrate that such a hybrid structure boosts the overall cell performance by increasing the light trapping capabilities and is especially effective at the silicon band edge. This kind of design can be used to increase the optical absorption over a wide spectral range and is relatively independent of the angle of incidence.%@@ We design an effective light trapping scheme through engineering metallic gratings and one-dimensional dielectric photonic crystals(PhCs) to increase the optical path length of light within the solar cells.This incorporation can result in broadband optical absorption enhancement not only for transverse magnetic polarized light but also for transverse-electric polarization.Even when no plasmonic mode can be excited,due to the high reflection of the PhCs,the absorption in the active region can still be enhanced.Rigorous coupled wave analysis results demonstrate that such a hybrid structure boosts the overall cell performance by increasing the light trapping capabilities and is especially effective at the silicon band edge.This kind of design can be used to increase the optical absorption over a wide spectral range and is relatively independent of the angle of incidence.

  1. Crystal orientation dependence of femtosecond laser-induced periodic surface structure on (100) silicon.

    Science.gov (United States)

    Jiang, Lan; Han, Weina; Li, Xiaowei; Wang, Qingsong; Meng, Fantong; Lu, Yongfeng

    2014-06-01

    It is widely believed that laser-induced periodic surface structures (LIPSS) are independent of material crystal structures. This Letter reports an abnormal phenomenon of strong dependence of the anisotropic formation of periodic ripples on crystal orientation, when Si (100) is processed by a linearly polarized femtosecond laser (800 nm, 50 fs, 1 kHz). LIPSS formation sensitivity with a π/2 modulation is found along different crystal orientations with a quasi-cosinusoid function when the angle between the crystal orientation and polarization direction is changed from 0° to 180°. Our experiments indicate that it is much easier (or more difficult) to form ripple structures when the polarization direction is aligned with the lattice axis [011]/[011¯] (or [001]). The modulated nonlinear ionization rate along different crystal orientations, which arises from the direction dependence of the effective mass of the electron is proposed to interpret the unexpected anisotropic LIPSS formation phenomenon. Also, we demonstrate that the abnormal phenomenon can be applied to control the continuity of scanned ripple lines along different crystal orientations.

  2. Apparatus for use in the production of ribbon-shaped crystals from a silicon melt

    Science.gov (United States)

    Berkman, S.; Temple, H. E. (Inventor)

    1980-01-01

    A susceptor for facilitating induction heating of silicon melt is described. The susceptor comprises a pair of susceptor halves of a thickness less than two skin depths, each being the mirror image of the other, disposed in mutually opposed, electrically insulated relation. The crucible comprises a quartz body supported by the graphite susceptor, whereby the R-F coil is electrically coupled with the melt.

  3. Nanopillar Photonic Crystal Lasers for Tb/s Transceivers on Silicon

    Science.gov (United States)

    2015-07-09

    thermal silicon dioxide (SiO2). Next, E-Beam resist ZEP520A was coated and nanoholes were patterned by E-Beam lithography ( EBL ). The designed diameter...and pitch of nanoholes for EBL patterning are 80 nm and 800 nm, respectively, and the size of the array is 50 μm × 50 μm. The SiNx layer was etched

  4. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  5. Observation of high deflection efficiency and narrow energy loss distributions for 450 GeV protons channeled in a bent silicon crystal

    Science.gov (United States)

    Møller, S. P.; Worm, T.; Clément, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafström, P.; Uggerhøj, E.; Hage-Ali, M.; Siffert, P.

    1994-03-01

    A 450 GeV proton beam has been deflected by various angles from 1 to 11 mrad using planar channeling in a (111) silicon crystal which was mechanically bent to achieve the desired beam deflection. High deflection efficiencies of up to 50% have been measured, in good agreement with present theoretical estimates. It is shown that bent crystals are also a unique tool for measurements of energy loss and straggling of channeled particles, without any influence from random particles: Selecting protons which are deflected by increasing angles corresponds to decreasing the transverse energy at the crystal entrance. With this technique energy loss and straggling was measured for protons channeled in the wide and narrow (111) planes in silicon for the first time.

  6. Bent silicon crystals for the LHC collimation Studies with an ultrarelativistic proton beam

    CERN Document Server

    Hasan, Said; Scandale, Walter; Vallazza, Erik

    2007-01-01

    LHC is a source of new challenges in every HEP field; among these, the beam collimation requires an innovative approach. The H8RD22 collaboration is undertaking an intense study of bent crystal properties with the goal of using crystals as primary collimators. The thesis gives an introduction to the theory of channeling and its related phenomena in bent crystals explaining how these can be used to perform an efficient beam collimation. The pre-thesis experiments are described to introduce the scientific context in which the H8RD22 collaboration is working. The thesis core is the description of two beam tests held in Sept. 2006 and May 2007 on the CERN SPS H8 beamline with 400 GeV/c protons: the experimental setups and procedures are shown together with the analysis of the collected data. With the observation of the volume reflection for the first time at these energies and the use of multi crystal systems, these experiments are a clear indication that crystal collimation is a real possibility for the second p...

  7. 5 × 5 cm2 silicon photonic crystal slabs on glass and plastic foil exhibiting broadband absorption and high-intensity near-fields

    Science.gov (United States)

    Becker, C.; Wyss, P.; Eisenhauer, D.; Probst, J.; Preidel, V.; Hammerschmidt, M.; Burger, S.

    2014-07-01

    Crystalline silicon photonic crystal slabs are widely used in various photonics applications. So far, the commercial success of such structures is still limited owing to the lack of cost-effective fabrication processes enabling large nanopatterned areas (>> 1 cm2). We present a simple method for producing crystalline silicon nanohole arrays of up to 5 × 5 cm2 size with lattice pitches between 600 and 1000 nm on glass and flexible plastic substrates. Exclusively up-scalable, fast fabrication processes are applied such as nanoimprint-lithography and silicon evaporation. The broadband light trapping efficiency of the arrays is among the best values reported for large-area experimental crystalline silicon nanostructures. Further, measured photonic crystal resonance modes are in good accordance with light scattering simulations predicting strong near-field intensity enhancements greater than 500. Hence, the large-area silicon nanohole arrays might become a promising platform for ultrathin solar cells on lightweight substrates, high-sensitive optical biosensors, and nonlinear optics.

  8. 5 × 5 cm² silicon photonic crystal slabs on glass and plastic foil exhibiting broadband absorption and high-intensity near-fields.

    Science.gov (United States)

    Becker, C; Wyss, P; Eisenhauer, D; Probst, J; Preidel, V; Hammerschmidt, M; Burger, S

    2014-07-30

    Crystalline silicon photonic crystal slabs are widely used in various photonics applications. So far, the commercial success of such structures is still limited owing to the lack of cost-effective fabrication processes enabling large nanopatterned areas (≫ 1 cm(2)). We present a simple method for producing crystalline silicon nanohole arrays of up to 5 × 5 cm(2) size with lattice pitches between 600 and 1000 nm on glass and flexible plastic substrates. Exclusively up-scalable, fast fabrication processes are applied such as nanoimprint-lithography and silicon evaporation. The broadband light trapping efficiency of the arrays is among the best values reported for large-area experimental crystalline silicon nanostructures. Further, measured photonic crystal resonance modes are in good accordance with light scattering simulations predicting strong near-field intensity enhancements greater than 500. Hence, the large-area silicon nanohole arrays might become a promising platform for ultrathin solar cells on lightweight substrates, high-sensitive optical biosensors, and nonlinear optics.

  9. Investigation of design parameters and choice of substrate resistivity and crystal orientation for the CMS silicon microstrip detector

    CERN Document Server

    Braibant, S

    2000-01-01

    The electrical characteristics ( interstrip and backplane capacitance, leakage current, depletion and breakdown voltage) of silicon microstrip detectors were measured for strip pitches between 60 um and 240 um and various strip implant and metal widths on multi-geometry devices. Both AC and DC coupled devices wereinvestigated. Measurements on detectors were performed before and after irradiation with 24 GeV/c protons up to a fluence of 4.1x10E14 cm-2. We found that the total strip capacitance can be parametrized as a linear function of the ratio of the implant width over the read-out pitch only. We found a significant increase in the interstrip capacitance after radiation on detectors with standard <111> crystal orientation but not on sensors with <100> crystal orientation. We analyzed the measured depletion voltages as a function of the detector geometrical parameters ( read-out pitch, strip width and substrate thickness) found in the literature and we found a linear dependence in...

  10. Enhanced Extraction of Silicon-Vacancy Centers Light Emission Using Bottom-Up Engineered Polycrystalline Diamond Photonic Crystal Slabs.

    Science.gov (United States)

    Ondič, Lukáš; Varga, Marian; Hruška, Karel; Fait, Jan; Kapusta, Peter

    2017-03-28

    Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at ≈738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom-up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample. Computer simulation confirmed that the extraction enhancement originates from the efficient light-matter interaction between light emitted from the SiV centers and the photonic crystal slab.

  11. Sequential purification and crystal growth for the production of low cost silicon substrates. Annual report, 15 September 1979-14 September 1980

    Energy Technology Data Exchange (ETDEWEB)

    Liaw, M; D' Aragona, F S

    1980-01-01

    The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) which is low cost and abundant for industrial usage was chosen as starting material. However, MG-Si cannot be used directly as substrates for solar cell fabrication for the following reasons: (1) it contains 1 to 2% metallic impurities, and (2) it is produced as irregular shapes with a fine grain structure. Various purification techniques have been reported. The techniques being studied under this program use direct methods for the purification of MG-Si. The process uses sequential steps of purification followed by crystal growth. The steps of sequential purification include: (1) leaching of MG-Si charge, (2) phase separation of non-soluble impurities from molten silicon, (3) reactive gas treatment of molten silicon, (4) liquid-liquid extraction (called slagging), and (5) impurity redistribution using ingot pulling. All the purification steps, with the exception of step (1), are performed in a consecutive manner using a crystal puller. The purified ingots will be produced in a desired ingot dimension and further recrystallization is not necessary. The theory and experimental results for each purification technique are presented. The relative effectiveness of the various steps are assessed and the most important step(s) are recommended. Finally the electrical characteristics of solar cells built on a thin epitaxial layer deposited on single pulled MG-Si substrates are discussed and compared to single crystal substrates. (WHK)

  12. Energy loss distributions of 7 TeV protons channeled in a bent silicon crystals

    Directory of Open Access Journals (Sweden)

    Stojanov Nace

    2013-01-01

    Full Text Available The energy loss distributions of relativistic protons axially channeled through the bent Si crystals, with the constant curvature radius, R = 50 m, are studied here. The proton energy is 7 TeV and the thickness of the crystal is varied from 1 mm to 5 mm, which corresponds to the reduced crystal thickness, L, from 2.1 to 10.6, respectively. The proton energy was chosen in accordance with the large hadron collider project, at the European Organization for Nuclear Research, in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated by the computer simulation method using the numerical solution of the proton equations of motion in the transverse plane. Dispersion of the proton scattering angle caused by its collisions with the crystal’s electrons was taken into account. [Projekat Ministarstva nauke Republike Srbije, br. III 45006

  13. Structure Tuning of Line-Defect Waveguides Based on Silicon-on-Insulator Photonic Crystal Slabs

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Xia; XU Xing-Sheng; XIONG Gui-Guang; HU Hai-Yang; SONG Qian; DU Wei; CHEN Hong-Da

    2007-01-01

    We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 μm into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510 nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

  14. Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

    CERN Document Server

    Bezchastnov, Victor G; Solovyov, Andrey V

    2015-01-01

    A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation from multi-GeV electrons and positrons channeling through the crystal. Benchmark theoretical results on the undulator are obtained by simulations of the channeling with a full atomistic approach to the projectile-crystal interactions over the macroscopic propagation distances. The simulations are facilitated by employing the MBN Explorer package for molecular dynamics calculations on the meso- bio- and nano-scales. The radiation from the ultra-relativistic channeling projectiles is computed within the quasi-classical formalism. The effects due to the quantum recoil are shown to be significantly prominent in the gamma-ray undulator radiation.

  15. Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

    Science.gov (United States)

    Prakash, Ronit R.; Sekiguchi, Takashi; Jiptner, Karolin; Miyamura, Yoshiji; Chen, Jun; Harada, Hirofumi; Kakimoto, Koichi

    2014-09-01

    Multicrystalline silicon was grown from seeds with small grains of random orientation and the growth mechanism was studied with respect to grain size, shape, boundary character and orientation. The average grain size perpendicular to growth direction increased steadily initially, became constant and then increased steadily again. Grain size parallel to growth direction increased rapidly with growth due to grain elongation in the growth direction. Grain shape with respect to growth direction changed from spherical to columnar with growth. Initially non-CSL grain boundary fraction was very high but decreased with growth as the Σ3 grain boundary fraction increased. A simple model was proposed to explain the results.

  16. Friction and wear of metals with a single-crystal abrasive grit of silicon carbide: Effect of shear strength of metal

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with spherical, single-crystal silicon carbide riders in contact with various metals and with metal riders in contact with silicon carbide flats. Results indicate that: (1) the friction force in the plowing of metal and (2) the groove height (corresponding to the volume of the groove) are related to the shear strength of the metal. That is, they decrease linearly as the shear strength of the bulk metal increases. Grooves are formed in metals primarily from plastic deformation, with occasional metal removal. The relation between the groove width D and the load W can be expressed by W = kD, superscript n which satisfies Meyer's law.

  17. Tuning of a cavity in a silicon photonic crystal by thermal expansion of an elastomeric infill

    NARCIS (Netherlands)

    Erdamar, A.K.; Van Leest, M.M.; Picken, S.J.; Caro, J.

    2011-01-01

    We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type sili

  18. Thermal tuning of a silicon photonic crystal cavity infilled with an elastomer

    NARCIS (Netherlands)

    Erdamar, A.K.; Van Leest, M.M.; Picken, S.J.; Caro. J.

    2011-01-01

    Thermal tuning of the transmission of an elastomer infilled photonic crystal cavity is studied. An elastomer has a thermal expansion-induced negative thermo-optic coefficient that leads to a strong decrease of the refractive index upon heating. This property makes elastomer highly suitable for therm

  19. Energy loss distributions of relativistic protons axially channeled in a bent silicon crystal

    Science.gov (United States)

    Stojanov, Nace; Petrović, Srdjan; Nešković, Nebojša

    2013-05-01

    A detailed study of the energy loss distributions of the relativistic protons axially channeled in the bent Si crystals is presented in this work. The bending angle was varied from 0 to 20 μrad, while the crystal thickness was equal to 1 mm. The proton energy was chosen to be 7 TeV in accordance with the Large Hadron Collider (LHC) project, at the European Organization for Nuclear Research (CERN), in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated using the numerical solution of the proton equations of motion in the transverse plane and the computer simulation method. An accurate energy loss model was used, which takes into account the trajectory dependence of the energy loss of protons during their motion through the crystal channels. Further, the dispersion of the proton's scattering angle caused by its collisions with the electrons of the crystal and the divergence of the proton beam were taken into account. The calculated dependence of the number of dechanneled protons on the bending angle was excellently fitted by the Gompertz type dechanneling function.

  20. Energy loss distributions of relativistic protons axially channeled in a bent silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Stojanov, Nace, E-mail: nacestoj@pmf.ukim.mk [Institute of Physics, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, P.O. Box 162, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Petrović, Srdjan; Nešković, Nebojša [Laboratory of Physics (010), Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11001 Belgrade (Serbia)

    2013-05-01

    A detailed study of the energy loss distributions of the relativistic protons axially channeled in the bent < 100 > Si crystals is presented in this work. The bending angle was varied from 0 to 20 μrad, while the crystal thickness was equal to 1 mm. The proton energy was chosen to be 7 TeV in accordance with the Large Hadron Collider (LHC) project, at the European Organization for Nuclear Research (CERN), in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated using the numerical solution of the proton equations of motion in the transverse plane and the computer simulation method. An accurate energy loss model was used, which takes into account the trajectory dependence of the energy loss of protons during their motion through the crystal channels. Further, the dispersion of the proton’s scattering angle caused by its collisions with the electrons of the crystal and the divergence of the proton beam were taken into account. The calculated dependence of the number of dechanneled protons on the bending angle was excellently fitted by the Gompertz type dechanneling function.

  1. Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity

    Science.gov (United States)

    Salem, Mohamed Shaker; Ibrahim, Shaimaa Moustafa; Amin, Mohamed

    2017-07-01

    A novel silicon-based optical microcavity composed of a defect layer sandwiched between two parallel rugate mirrors is created by the electrochemical anodization of silicon in a hydrofluoric acid-based electrolyte using a precisely controlled current density profile. The profile consists of two sinusoidally modulated current waveforms separated by a fixed current that is applied to produce a defect layer between the mirrors. The spectral response of the rugate-based microcavity is simulated using the transfer matrix method and compared to the conventional Bragg-based microcavity. It is found that the resonance position of both microcavities is unchanged. However, the rugate-based microcavity exhibits a distinct reduction of the sidebands' intensity. Further attenuation of the sidebands' intensity is obtained by creating refractive index matching layers with optimized thickness at the bottom and top of the rugate-based microcavity. In order to stabilize the produced microcavity against natural oxidation, atomic layer deposition of an ultra-thin titanium dioxide layer on the pore wall is carried out followed by thermal annealing. The microcavity resonance position shows an observable sensitivity to the deposition and annealing processes.

  2. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    Science.gov (United States)

    Pramann, Axel; Rienitz, Olaf

    2016-06-01

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  3. Theoretical research on damage mechanism of ultrafast laser ablation crystal silicon

    Science.gov (United States)

    Shao, Junfeng; Guo, Jin; Wang, Tingfeng

    2013-09-01

    High peak power picosecond laser ablation of silicon draws great attention in solar cell manufacture,laser optoelectric countermeasure applications, eta. This paper reports the damage process of ultrafast lasers interaction with silicon,which is based on Two-Temperature Model(TTM) and 1-on-1 damage threshold test method. Pulsed laser caused damage manifests in several ways, such as heat damage, mechanical effect and even eletrical effect. In this paper, a modified Two Temperature Model is applied in ultrashort laser interaction with silicon.The traditional Two-Temperature Model methods is proposed by Anismov in 1970s to calculate the interaction between ultrafast laser with metals, which is composed of free electrons and lattice. Beyond the carrier and lattice temperture model, an additional excited term and Auger recombination term of carriers is taken into account in this modified Two-Temperature Model model to reflect the characteristics in semicondutors. Under the same pulse-duration condition, the damage threshold is found to be 161 mJ/cm2 and a characteritic double-peak shape shows up. As the pulse energy density rises from 50mJ/cm2 to 161 mJ/cm2, the difference between carrier and lattice temperature steps down proportionally.Also,a detailed interaction process between photon-electron and electron-phonon is discussed. Electron and lattice temperature evolutes distinctly different, while the former is much higher than the latter until heat tranfer finished at 200 picoseconds. Two-peak feature of electron temperature is also identified. As the pulse duration increases from 20 picosecond to 60 picosecond, the he difference between carrier and lattice temperature steps down significantly. The calculated damage threshold does not change fundamentally, remaining approximately 0.16J/cm2. Also, the damage mechanism is found to be thermal heating with the pulse width between 20 and 60 picoseconds at threshold fluences which is identical to experiment test result

  4. 8% Efficient thin-film polycrystalline-silicon solar cells based on aluminium-induced crystallization and thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, I.; Carnel, L.; Van Gestel, D.; Beaucarne, G.; Poortmans, J. [IMEC VZW, Leuven (Belgium)

    2006-07-01

    A considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from polycrystalline-silicon (pc-Si) thin films on inexpensive substrates. We recently showed promising solar cells results using pc-Si layers obtained by aluminium-induced crystallization (AlC) of amorphous silicon in combination with thermal chemical vapor deposition (CVD). To obtain highly efficient pc-Si solar cells, however, the material quality has to be optimized and cell processes different from those applied for standard bulk-Si solar cells have to be developed. In this work, we present the different process steps that we recently developed to enhance the efficiency of pc-Si solar cells on alumina substrates made by AlC in combination with thermal CVD. Our present pc-Si solar cell process yields cells in substrate configuration with efficiencies so far of up to 8.0%. Spin-on oxides are used to smoothen the alumina substrate surface to enhance the electronic quality of the absorber layers. The cells have heterojunction emitters consisting of thin a-Si layers that yield much higher V{sub oc} values than classical diffused emitters. Base and emitter contacts are on top of the cell in interdigitated finger patterns, leading to fill factors above 70%. The front surface of the cells is plasma textured to increase the current density. Our present pc-Si solar cell efficiency of 8% together with the fast progression that we have made over the last few years indicate the large potential of pc-Si solar cells based on the AlC seed layer approach. (author)

  5. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon.

    Science.gov (United States)

    Zhao, Deyin; Liu, Shihchia; Yang, Hongjun; Ma, Zhenqiang; Reuterskiöld-Hedlund, Carl; Hammar, Mattias; Zhou, Weidong

    2016-01-04

    We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ~ 200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.

  6. Stress-magnetization properties of a silicon iron single crystal under stress

    Science.gov (United States)

    Saito, Akihiko; Hashimoto, Masaaki; Kawaguchi, Eiji; Murashige, Shinichi

    1996-07-01

    The effects of tensile and compressive stress on magnetization changes in a Si-Fe single crystal with a (110) surface and longitudinal directions declined from the [001] direction were investigated. We found a peculiar magnetization change, namely a reversible magnetization change due to stress consisting of two peak values in a constant magnetic field. The double peak characteristic appears in samples with angle smaller than 55° for compressive stress and with angle larger than 60° for tensile stress.

  7. Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

    Science.gov (United States)

    Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2011-10-10

    We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

  8. A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited.

    Science.gov (United States)

    Park, Sanghyun; Lee, Yong Hwan; Wi, Jung-Sub; Oh, Jihun

    2016-07-27

    Ultrathin single crystal Si films offer a versatile vehicle for high performance flexible and semitransparent electric devices due to their outstanding optoelectric and mechanical properties. Here, we demonstrate the formation of an ultrathin (100) single crystal Si film based on morphological evolution of nanoporous Si during high temperature annealing. Square arrays of cylindrical Si pores are formed by nanoimprint lithography and deep reactive etching and then subjected to annealing in hydrogen ambient. By controlling the aspect ratio of nanoporous Si, defect-free single crystal Si membranes with controlled thicknesses from 330 to 470 nm are formed on a platelike void after the annealing. In addition, we investigate the role of oxygen impurities in a hydrogen atmosphere on defect formation on a Si surface and eliminate the oxygen-related defects on Si by controlling gas phase diffusion of oxygen impurities during annealing in a conventional tube furnace. Finally, we demonstrate the transfer of a defect-free, flexible, and wafer scale Si membrane with thickness of 470 nm onto a PDMS substrate, utilizing the platelike void under the membrane as a releaser. The ultrathin flexible Si film on PDMS shows optical transmittance of about 30-70% in visible and near-infrared light.

  9. Etch-Tuning and Design of Silicon Nitride Photonic Crystal Reflectors

    CERN Document Server

    Bernard, Simon; Dumont, Vincent; Peter, Yves-Alain; Sankey, Jack C

    2016-01-01

    By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operating wavelength (e.g. that of a low-noise laser or emitter) is not tunable, imposing tolerances on crystal geometry that are not reliably achieved with standard nanolithography. Here we present a gentle technique to finely tune the resonant wavelength of a \\SiN PCR using iterative hydrofluoric acid etches. With little optimization, we achieve a 57-nm-thin photonic crystal having an operating wavelength within 0.15 nm (0.04 resonance linewidths) of our target (1550 nm). Our thin structure exhibits a broader and less pronounced transmission dip than is predicted by plane wave simulations, and we identify two effects leading to these discrepancies, both related to the divergence angle of a collimated laser beam. To overcome this limitation in future devices, we distill ...

  10. Nucleation and crystallization process of silicon using Stillinger-Weber potential

    Science.gov (United States)

    Beaucage, Philippe; Mousseau, Normand

    2004-03-01

    Philippe Beaucage and Normand Mousseau Département de physique and RQMP, Université de Montréal We present a numerical study of the nucleation process leading to the crystallization of a 10648-atoms system. With elementary building blocks of diamond and wurtzite structure as a criterion for the recognition of the crystalline nuclei in the supercooled liquid, we can directly follow the phase transition. Out of the nine NVT trajectories we generate, six crystallizes in less than 10 ns. By following the trajectory of the stable cluster which will eventually nucleate, we can identify the different regimes of the nucleation process. The path to crystallization can also be analysed in terms of the classical nucleation theory (CNT). For example, the lifetime distribution of clusters as a function of their size is well represented by an inversed Gaussian, as can be derived from CNT. However, there are some strong discrepancies with the CNT predictions of the free energy curve. A number of hypotheses are studied to identify the source of this discrepancy. This work is supported in part by NSERC and FQRNT. NM is a Cottrell Scholar of the Research Corporation.

  11. Effect of thermal shield and gas flow on thermal elastic stresses in 300 mm silicon crystal

    Institute of Scientific and Technical Information of China (English)

    GAO Yu; XIAO Qinghua; ZHOU Qigang; DAI Xiaolin; TU Hailing

    2006-01-01

    The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses.A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions.The adopted governing partial equations for stress calculation are Cauchy's first and second laws of motion.It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal.With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low.With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence.Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level.In contrast, the increase of gas pressure cannot result in so significant effect.The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.

  12. Crystal structures of bis-(phen-oxy)silicon phthalocyanines: increasing π-π inter-actions, solubility and disorder and no halogen bonding observed.

    Science.gov (United States)

    Lessard, Benoît H; Lough, Alan J; Bender, Timothy P

    2016-07-01

    We report the syntheses and characterization of three solution-processable phen-oxy silicon phthalocyanines (SiPcs), namely bis-(3-methyl-phen-oxy)(phthalocyanine)silicon [(3MP)2-SiPc], C46H30N8O2Si, bis-(2-sec-butyl-phen-oxy)(phthalocyanine)silicon [(2secBP)2-SiPc], C44H24I2N8O2Si, and bis-(3-iodo-phen-oxy)(phthalocyanine)silicon [(3IP)2-SiPc], C52H42N8O2Si. Crystals grown of these compounds were characterized by single-crystal X-ray diffraction and the π-π inter-actions between the aromatic SiPc cores were studied. It was determined that (3MP)2-SiPc has similar inter-actions to previously reported bis-(3,4,5-tri-fluoro-phen-oxy)silicon phthalocyanines [(345 F)2-SiPc] with significant π-π inter-actions between the SiPc groups. (3IP)2-SiPc and (2secBP)2-SiPc both experienced a parallel stacking of two of the peripheral aromatic groups. In all three cases, the solubility of these mol-ecules was increased by the addition of phen-oxy groups while maintaining π-π inter-actions between the aromatic SiPc groups. The solubility of (2secBP)2-SiPc was significantly higher than other bis-phen-oxy-SiPcs and this was exemplified by the higher observed disorder within the crystal structure.

  13. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  14. High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

    Directory of Open Access Journals (Sweden)

    W. Scandale

    2016-09-01

    Full Text Available A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10% of its amorphous level whereas in channeling along the (110 planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

  15. Multiplexed specific label-free detection of NCI-H358 lung cancer cell line lysates with silicon based photonic crystal microcavity biosensors.

    Science.gov (United States)

    Chakravarty, Swapnajit; Lai, Wei-Cheng; Zou, Yi; Drabkin, Harry A; Gemmill, Robert M; Simon, George R; Chin, Steve H; Chen, Ray T

    2013-05-15

    We experimentally demonstrate label-free photonic crystal (PC) microcavity biosensors in silicon-on-insulator (SOI) to detect the epithelial-mesenchymal transition (EMT) transcription factor, ZEB1, in minute volumes of sample. Multiplexed specific detection of ZEB1 in lysates from NCI-H358 lung cancer cells down to an estimated concentration of 2 cells per micro-liter is demonstrated. L13 photonic crystal microcavities, coupled to W1 photonic crystal waveguides, are employed in which resonances show high Q in the bio-ambient phosphate buffered saline (PBS). When the sensor surface is derivatized with a specific antibody, the binding of the corresponding antigen from a complex whole-cell lysate generates a change in refractive index in the vicinity of the photonic crystal microcavity, leading to a change in the resonance wavelength of the resonance modes of the photonic crystal microcavity. The shift in the resonance wavelength reveals the presence of the antigen. The sensor cavity has a surface area of ∼11μm(2). Multiplexed sensors permit simultaneous detection of many binding interactions with specific immobilized antibodies from the same bio-sample at the same instant of time. Specificity was demonstrated using a sandwich assay which further amplifies the detection sensitivity at low concentrations. The device represents a proof-of-concept demonstration of label-free, high throughput, multiplexed detection of cancer cells with specificity and sensitivity on a silicon chip platform.

  16. Design of a micromachined terahertz electromagnetic crystals (EMXT) channel-drop filter on silicon-substrate

    Science.gov (United States)

    Zhou, Kai; Liu, Yong; Si, Liming; Lv, Xin

    2013-08-01

    An integrated 0.5 THz electromagnetic crystals(EMXT) channel-drop filter based on PBG structure is presented in this paper. A channel-drop filter is a device in which a narrow bandwidth is redirected to another "drop" waveguide while other frequencies are unaffected. It's capable of extracting a certain frequency from a continuous spectrum in the bus channel and passing it to the test channel. It has potential applications in photonic integrated circuits, radio astronomy, THz spectroscopy, THz communication and remote sensing radar receiver. PBG structures(or photonic crystals) are periodic structures which possess band gaps, where the electromagnetic wave of certain ranges of frequencies cannot pass through and is reflected. The proposed channel-drop filter consists of input waveguide,output waveguide and PBG structure. The proposed filter is simulated using the finite element method and can be fabricated by micro-electromechanical systems (MEMS) technology,due to its low cost, high performance and high processing precision.The filter operation principle and fabrication process are discussed.The simulation results show its ability to filter the frequency of 496GHz with a linewidth of approximately 4GHz and transmission of 27.2 dB above background.The loss at resonant frequency is less than 1dB considering the thickness and roughness of gold layer required by the MEMS process.The channel drop efficiency is 84%.

  17. Investigation of Crystal Surface Finish and Geometry on Single LYSO Scintillator Detector Performance for Depth-of-Interaction Measurement with Silicon Photomultipliers.

    Science.gov (United States)

    Bircher, Chad; Shao, Yiping

    2012-11-21

    Depth of Interaction (DOI) information can improve quality of reconstructed images acquired from Positron Emission Tomography (PET), especially in high resolution and compact scanners dedicated for breast, brain, or small animal imaging applications. Additionally, clinical scanners with time of flight capability can also benefit from DOI information. One of the most promising methods of determining DOI in a crystal involves reading the signal from two ends of a scintillation crystal, and calculating the signal ratio between the two detectors. This method is known to deliver a better DOI resolution with rough crystals compared to highly polished crystals. However, what is still not well studied is how much of a tradeoff is involved between spatial, energy, temporal, and DOI resolutions as a function of the crystal surface treatment and geometry with the use of Silicon Photomultipliers (SiPM) as the photo detectors. This study investigates the effects of different crystal surface finishes and geometries on energy, timing and DOI resolutions at different crystal depths. The results show that for LYSO scintillators of 1.5×1.5×20 mm(3) and 2×2×20 mm(3) with their surfaces finished from 0.5 to 30 micron roughness, almost the same energy and coincidence timing resolutions were maintained, around 15% and 2.4 ns respectively across different crystal depths, while the DOI resolutions were steadily improved from worse than 5 mm to better than 2 mm. They demonstrate that crystal roughness, with proper surface preparing, does not have a significant effect on the energy and coincidence timing resolutions in the crystals examined, and there does not appear to be a tradeoff between improving DOI resolution and degrading other detector performances. These results will be valuable to guide the selection of crystal surface conditions for developing a DOI measurable PET detector with a full array of LYSO scintillators coupled to SiPM arrays.

  18. Crystallization Behavior of Virgin TR-55 Silicone Rubber Measured Using Dynamic Mechanical Thermal Analysis with Liquid Nitrogen Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Small IV, W; Wilson, T S

    2010-02-11

    Dynamic mechanical thermal analysis (DMTA) of virgin TR-55 silicone rubber specimens was conducted. Two dynamic temperature sweep tests, 25 to -100 C and 25 to -70 to 0 C (ramp rate = 1 C/min), were conducted at a frequency of 6.28 rad/s (1 Hz) using a torsion rectangular test geometry. A strain of 0.1% was used, which was near the upper limit of the linear viscoelastic region of the material based on an initial dynamic strain sweep test. Storage (G{prime}) and loss (G{double_prime}) moduli, the ratio G{double_prime}/G{prime} (tan {delta}), and the coefficient of linear thermal expansion ({alpha}) were determined as a function of temperature. Crystallization occurred between -40 and -60 C, with G{prime} increasing from {approx}6 x 10{sup 6} to {approx}4 x 10{sup 8} Pa. The value of {alpha} was fairly constant before ({approx}4 x 10{sup -4} mm/mm- C) and after ({approx}3 x 10{sup -4} mm/mm- C) the transition, and peaked during the transition ({approx}3 x 10{sup -3} mm/mm- C). Melting occurred around -30 C upon heating.

  19. Calculation of BER in multi-channel silicon optical interconnects: comparative analysis of strip and photonic crystal waveguides

    Science.gov (United States)

    You, Jie; Lavdas, Spyros; Panoiu, Nicolae C.

    2016-05-01

    We present an effective approach to evaluate the performance of multi-channel silicon (Si) photonic systems. The system is composed of strip Si photonic waveguides (Si-PhWs) with uniform cross-section or photonic-crystal (PhC) Si waveguides (Si-PhCWs), combined with a set of direct-detection receivers. Moreover, the optical field in each channel is the superposition of a continuous-wave nonreturn-to-zero ON-OFF keying modulated signal and a white Gaussian noise. In order to characterize the optical signal propagation in the waveguides, an accurate mathematical model describing all relevant linear and nonlinear optical effects and its linearized version is employed. In addition, two semi-analytical methods, time- and frequency-domain Karhunen-Loève series expansion, are used to assess the system bit-error-rate (BER). Our analysis reveals that Si-PhCWs provide similar performance as Si-PhWs, but for 100× shorter length. Importantly, much worse BER is achieved in Si-PhCWs when one operates in slow-light regime, due to the enhanced linear and nonlinear effects.

  20. Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas

    Science.gov (United States)

    Torrisi, L.; Foti, G.; Giuffrida, L.; Puglisi, D.; Wolowski, J.; Badziak, J.; Parys, P.; Rosinski, M.; Margarone, D.; Krasa, J.; Velyhan, A.; Ullschmied, U.

    2009-06-01

    A single-crystal silicon carbide (SiC) detector was used for measurements of soft x rays, electrons, and ion emission from laser-generated plasma obtained with the use of the Prague Asterix Laser System (PALS) at intensities of the order of 1016 W/cm2 and pulse duration of 300 ps. Measurements were performed by varying the laser intensity and the nature of the irradiated target. The spectra obtained by using the SiC detector show not only the photopeak due to UV and soft x-ray detection, but also various peaks due to the detection of energetic charged particles. Time-of-flight technique was employed to determine the ion kinetic energy of particles emitted from the plasma and to perform a comparison between SiC and traditional ion collectors. The detector was also employed by inserting absorber films of different thickness in front of the SiC surface in order to determine, as a first approximation, the mean energy of the soft x-ray emission from the plasma.

  1. Parallel aligned liquid crystal on silicon display based optical set-up for the generation of polarization spatial distributions

    Science.gov (United States)

    Estévez, Irene; Lizana, Angel; Zheng, Xuejie; Peinado, Alba; Ramírez, Claudio; Martínez, Jose Luis; Márquez, Andrés.; Moreno, Ignacio; Campos, Juan

    2015-06-01

    Liquid Crystals on Silicon (LCOS) displays are a type of LCDs that work in reflection. Such devices, due to the double pass that the light beam performs through the LC cells, lead to larger phase modulation than transmissive LCDs with the same thickness. By taking advantage of this modulation capability exhibited by LCOS displays, we propose a new experimental set-up which is able to provide customized state of polarization spatial distributions just by means of a single LCOS display. To this aim, a double reflection on different halves of the display is properly performed. This fact is achieved by including a compact optical system that steers the light and performs a proper polarization plane rotation. The set-up has been experimentally implemented and some experimental concerns are discussed. The suitability of the system is provided by generating different experimental spatial distributions of polarization. In this regard, well-known polarization distributions, as axial, azimuthal or spiral linear polarization patterns are here provided. Based on the excellent results obtained, the suitability of the system to generate different spatially variant distributions of polarization is validated.

  2. A new method for three-dimensional tracking using a liquid crystal on silicon (LCoS)

    Science.gov (United States)

    Goldin, Matías A.; Díaz Costanzo, Guadalupe; Martínez, Oscar E.; Iemmi, Claudio; Ledesma, Silvia

    2008-10-01

    Imaging of samples by different microscopy techniques has produced a relevant impact in the development of new diagnosis techniques in biology, medicine, and material science. In many biological applications, where the sample changes or moves during the observation, a dynamical focusing of the microscope is needed. To this end it is necessary to localize the sample previously to the refocusing process. We introduce here an optical system that can perform three-dimensional (3D) tracking without mechanical displacements. The system is based on the use of a high resolution liquid crystal on silicon (LCoS) device working as a phase mostly wavefront modulator. The additional advantage of this system is performing the motion of the spot at video rate. By using elliptical polarization we have experimentally found a configuration where the phase modulation is 2π and the intensity modulation has a variation less than 25%. For this configuration we show how the spot can be moved through the focus plane by means of linear phases, or displaced out of this plane by using a quadratic phase.

  3. Adaptive optics scanning laser ophthalmoscope using liquid crystal on silicon spatial light modulator: Performance study with involuntary eye movement

    Science.gov (United States)

    Huang, Hongxin; Toyoda, Haruyoshi; Inoue, Takashi

    2017-09-01

    The performance of an adaptive optics scanning laser ophthalmoscope (AO-SLO) using a liquid crystal on silicon spatial light modulator and Shack-Hartmann wavefront sensor was investigated. The system achieved high-resolution and high-contrast images of human retinas by dynamic compensation for the aberrations in the eyes. Retinal structures such as photoreceptor cells, blood vessels, and nerve fiber bundles, as well as blood flow, could be observed in vivo. We also investigated involuntary eye movements and ascertained microsaccades and drifts using both the retinal images and the aberrations recorded simultaneously. Furthermore, we measured the interframe displacement of retinal images and found that during eye drift, the displacement has a linear relationship with the residual low-order aberration. The estimated duration and cumulative displacement of the drift were within the ranges estimated by a video tracking technique. The AO-SLO would not only be used for the early detection of eye diseases, but would also offer a new approach for involuntary eye movement research.

  4. Simple down conversion nano-crystal coatings for enhancing Silicon-solar cells efficiency

    Directory of Open Access Journals (Sweden)

    Gur Mittelman

    2016-09-01

    Full Text Available Utilizing self-assembled nano-structured coatings on top of existing solar cells has thepotential to increase the total quantum efficiency of the cell using a simple and cheap process. In ourwork we have exploited the controlled absorption of nano-crystal with different band gaps to realizedown conversion artificial antennas that self-assembled on the device surface. The UV sun light isconverted to the visible light enhancing the solar cell performance in two complementary routes; a.protecting the solar cell and coatings from the UV illumination and therefore reducing the UVradiation damage. b. enhancing the total external quantum efficiency of the cell by one percent. Thisis achieved using a simple cheap process that can be adjusted to many different solar cells.

  5. Laser emissions from one-dimensional photonic crystal rings on silicon-dioxide

    Science.gov (United States)

    Lu, Tsan-Wen; Tsai, Wei-Chi; Wu, Tze-Yao; Lee, Po-Tsung

    2013-02-01

    In this report, we design and utilize one-dimensional photonic crystal ring resonators (1D PhCRRs) to realize InGaAsP/SiO2 hybrid lasers via adhesive bonding technique. Single-mode lasing with low threshold from the dielectric mode is observed. To further design a nanocavity with mode gap effect in 1D PhCRR results in the reduced lasing threshold and increased vertical laser emissions, owing to the reduced dielectric mode volume and the broken rotational symmetry by the nanocavity. Such hybrid lasers based on 1D PhC rings provides good geometric integration ability and new scenario for designing versatile devices in photonic integrated circuits.

  6. High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

    Science.gov (United States)

    Vico Triviño, N.; Rossbach, G.; Dharanipathy, U.; Levrat, J.; Castiglia, A.; Carlin, J.-F.; Atlasov, K. A.; Butté, R.; Houdré, R.; Grandjean, N.

    2012-02-01

    We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at ˜420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy.

  7. Rotation of X-ray polarization in the glitches of a silicon crystal monochromator.

    Science.gov (United States)

    Sutter, John P; Boada, Roberto; Bowron, Daniel T; Stepanov, Sergey A; Díaz-Moreno, Sofía

    2016-08-01

    EXAFS studies on dilute samples are usually carried out by collecting the fluorescence yield using a large-area multi-element detector. This method is susceptible to the 'glitches' produced by all single-crystal monochromators. Glitches are sharp dips or spikes in the diffracted intensity at specific crystal orientations. If incorrectly compensated, they degrade the spectroscopic data. Normalization of the fluorescence signal by the incident flux alone is sometimes insufficient to compensate for the glitches. Measurements performed at the state-of-the-art wiggler beamline I20-scanning at Diamond Light Source have shown that the glitches alter the spatial distribution of the sample's quasi-elastic X-ray scattering. Because glitches result from additional Bragg reflections, multiple-beam dynamical diffraction theory is necessary to understand their effects. Here, the glitches of the Si(111) four-bounce monochromator of I20-scanning just above the Ni K edge are associated with their Bragg reflections. A fitting procedure that treats coherent and Compton scattering is developed and applied to a sample of an extremely dilute (100 micromolal) aqueous solution of Ni(NO3)2. The depolarization of the wiggler X-ray beam out of the electron orbit is modeled. The fits achieve good agreement with the sample's quasi-elastic scattering with just a few parameters. The X-ray polarization is rotated up to ±4.3° within the glitches, as predicted by dynamical diffraction. These results will help users normalize EXAFS data at glitches.

  8. Optical nose based on porous silicon photonic crystal infiltrated with ionic liquids.

    Science.gov (United States)

    Zhang, Haijuan; Lin, Leimiao; Liu, Dong; Chen, Qiaofen; Wu, Jianmin

    2017-02-08

    A photonic-nose for the detection and discrimination of volatile organic compounds (VOCs) was constructed. Each sensing element on the photonic sensor array was formed by infiltrating a specific type of ionic liquid (IL) into the pore channel of a patterned porous silicon (PSi) chip. Upon exposure to VOC, the density of IL dramatically decreased due to the nano-confinement effect. As a result, the IL located in pore channel expanded its volume and protrude out of the pore channel, leading to the formation of microdroplets on the PSi surface. These VOC-stimulated microdroplets could scatter the light reflected from the PSi rugate filter, thereby producing an optical response to VOC. The intensity of the optical response produced by IL/PSi sensor mainly depends on the size and shape of microdroplets, which is related to the concentration of VOC and the physi-chemical propertied of ILs. For ethanol vapor, the optical response has linear relationship with its relative vapor pressure within 0-60%. The LOD of the IL/PSi sensor for ethanol detection is calculated to be 1.3 ppm. It takes around 30 s to reach a full optical response, while the time for recovery is less than 1 min. In addition, the sensor displayed good stability and reproducibility. Owing to the different molecular interaction between IL and VOC, the ILs/PSi sensor array can generate a unique cross-reactive "fingerprint" in response to a specific type of VOC analyte. With the assistance of image technologies and principle components analysis (PCA), rapid discrimination of VOC analyte could be achieved based on the pattern recognition of photonic sensor array. The technology established in this work allows monitoring in-door air pollution in a visualized way.

  9. Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates

    Science.gov (United States)

    Chen, Zhaohui

    Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs). This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques. To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 k

  10. Bridgman Growth of Germanium and Germanium-Silicon Crystals under Microgravity

    Science.gov (United States)

    Croell, A.; Hess, A.; Zaehringer, J.; Sorgenfrei, T.; Egorov, A.; Senchenkov, A.; Mazuruk, K.; Volz, M.

    2016-01-01

    Four different Bridgman growth experiments on Ge:Ga and Ge(sub x)Si(sub 1-x) were performed under microgravity during the FOTON M4 flight in fall 2014 as joint German-Russian experiments. The experiments were also part of the RDGS/ICESAGE project(s) of ESA/NASA on detached growth of Ge and Ge-Si. Three experiments on Ge:Ga investigated different heat and mass transport regimes, i.e. mostly diffusive conditions, flows driven by a rotating magnetic field, and flows driven by vibration. The fourth experiment on Ge(sub 0.98)Si(0.02) investigated detached growth. All four experiments were successful and yielded crystals. Both the Ge-Si experiment and two of the Ge:Ga experiments showed stable detachment from the ampoule wall, although this was not planned for the latter two experiments. The influence of the rotating magnetic field as well as of the vibration was pronounced in the case of the microgram experiments, but dominated by buoyancy convection under 1g.

  11. Narrow-linewidth carbon nanotube emission in silicon hollow-core photonic crystal cavity.

    Science.gov (United States)

    Hoang, Thi Hong Cam; Durán-Valdeiglesias, Elena; Alonso-Ramos, Carlos; Serna, Samuel; Zhang, Weiwei; Balestrieri, Matteo; Keita, Al-Saleh; Caselli, Niccolò; Biccari, Francesco; Le Roux, Xavier; Filoramo, Arianna; Gurioli, Massimo; Vivien, Laurent; Cassan, Eric

    2017-06-01

    Polymer-sorted semiconducting single-walled carbon nanotubes (SWNTs) provide room-temperature emission at near-infrared wavelengths, with potential for large volume production of high-quality solutions and wafer-scale deposition. These features make SWNTs a very attractive material for the realization of on-chip light sources. Coupling SWNT into optical microcavities could enhance and guide their emission, while enabling spectral selection by cavity resonance engineering. This could allow the realization of bright, narrowband sources. Here, we report the first demonstration of coupling SWNTs into the resonant modes of Si hollow-core photonic crystal cavities. We exploit the strong evanescent field in these resonators to interact with SWNT emission, coupling it into an integrated access waveguide. Based on this concept, we demonstrate narrowband SWNT emission resonantly coupled into a Si bus waveguide with a full width at half-maximum of 0.34 nm and an off-resonance rejection exceeding 5 dB.

  12. Generation of broadband 17-μJ mid-infrared femtosecond pulses at 3.75 μm by silicon carbide crystal.

    Science.gov (United States)

    Fan, Hai-Tao; Xu, Chun-Hua; Wang, Zhao-Hua; Wang, Gang; Liu, Chun-Jun; Liang, Jing-Kui; Chen, Xiao-Long; Wei, Zhi-Yi

    2014-11-01

    In this contribution, we report the generation of 17-μJ mid-infrared (MIR) pulses with duration of 70 fs and bandwidth of 550 nm centered at 3.75 μm at 1-kHz repetition rate, by a two-stage femtosecond optical parametric amplifier utilizing 4H-silicon carbide crystal as the nonlinear medium. The crystal is selected as it processes orders of magnitude higher damage threshold than traditional MIR nonlinear crystals, and it supports extreme broad parametric bandwidth. With its distinguished features such as MIR central wavelength, ultra-broad bandwidth, self-stable carrier-envelope phase, and potential for energy scaling, this kind of MIR source holds promise for new approaches to extreme short isolated attosecond pulse generation as well as MIR spectroscopy applications.

  13. Real-time observation of bismuth silicon oxide crystal growth in silicon oxide-bismuth oxide system%氧化硅-氧化铋系统中硅酸铋晶体生长实时观测

    Institute of Scientific and Technical Information of China (English)

    王秀峰; 徐驰; 江红涛; 韩元亨

    2015-01-01

    高温熔体的实时观测与分析对于晶体生长及其影响因素分析具有十分重要的意义 .利用高温热台及偏光显微镜 ,对铋硅系统熔融及冷却过程进行实时观测 .观察到高温下与石英砂接触的氧化铋粉体先熔融 ,说明异质颗粒接触点处是反应开始的地方 .之后熔体与石英(二氧化硅)晶体反应 ,冷却过程中在石英晶体表面周围及坩埚壁附近生长出硅酸铋晶体 ,这说明晶体易在颗粒接触处析出 .实验中氧化铋与二氧化硅摩尔比为4:3,此时石英晶体并没有全部熔融 .对比分析系统熔体在降温时晶体析出长大的过程 ,计算出硅酸铋晶体的生长平均速率为15 .38 μm/min .通过线能谱扫描分析 ,认为熔体温度和硅元素的富集程度对晶体生长速度有重要影响.%Real time observation and analysis of high temperature melt is great of significance for crystal growth and the analysis of its influencing factors .The paper using high tempera-ture thermal units and polarizing optical microscope observed the melt and cooling process of bismuth silicon systems in real time .In high temperature the bismuth oxide powder which in contact with quartz sand is first melting ,it shows that the heterogeneity particles at the con-tact point is the place to reaction start .Then bismuth oxide melt reacted with the quartz (sil-icon dioxide) crystal .In cooling process the surface of quartz crystal and the crucible wall grown bismuth silicate crystals .This means at the contact point of particle is easy to crystal grow .The molar ratio of bismuth oxide and silicon dioxide was 4:3 in the experiment ,not all of the quartz crystal melted at this moment .Comparative analysis of the system melt crystallization process of growing up in cooling process ,the average grow th rate of crystals of bismuth silicate is calculated 15 .38 μm/min .According to the energy spectrum analysis of scanning ,melt temperature and the enrichment of

  14. Investigation of the crystallization process of amorphous silicon thin films%非晶硅薄膜晶化过程的研究

    Institute of Scientific and Technical Information of China (English)

    黄木香; 杨琳; 刘玉琪; 王江涌

    2012-01-01

    Polycrystalline silicon thin film is a high quality material for micro - electronic components, thin film transistors and large flat-panel LCD displays because of its high electrical mobility and stable photoelectric properties. Moreover, it has been regarded as a candidate material for making high efficiency, lower energy consumption and optimized thin film solar cells. Therefore, how to fabricate polycrystalline silicon thin film is a very meaningful research topic. Solid phase crystallization is a usual method to fabricate polycrystalline silicon thin film, by high temperature annealing to transfer amorphous film to polycrystalline phase, In this paper, the solid phase crystallization process of amorphous silicon thin films fabricated by different techniques are studied systematically by XRD and Raman spectroscopy.%多晶硅薄膜具有较高的电迁移率和稳定的光电性能,是制备微电子器件、薄膜晶体管、大面积平板液晶显示的优质材料.多晶硅薄膜被公认为是制备高效、低耗、最理想的薄膜太阳能电池的材料.因此,如何制备多晶硅薄膜是一个非常有意义的研究课题.固相法是制备多晶硅薄膜的一种常用方法,它是在高温退火的条件下,使非晶硅薄膜通过固相相变而成为多晶硅薄膜.本文采用固相法,利用X-ray衍射及拉曼光谱,对用不同方法制备的非晶硅薄膜的晶化过程进行了系统地研究.

  15. RELATIONSHIPS BETWEEN AUTUMN INDIAN OCEAN DIPOLE MODE AND THE STRENGTH OF SCS SUMMER MONSOON

    Institute of Scientific and Technical Information of China (English)

    LI Dong-hui; ZHANG Gui; ZHU Yi-min; TAN Yan-ke; WANG Xue-zhong

    2007-01-01

    Based on 1948 - 2004 monthly Reynolds Sea Surface Temperature (SST) and NCEP/NCAR atmospheric reanalysis data, the relationships between autumn Indian Ocean Dipole Mode (IODM) and the strength of South China Sea (SCS) Summer Monsoon are investigated through the EOF and smooth correlation methods. The results are as the following. (1) There are two dominant modes of autumn SSTA over the tropical Indian Ocean. They are the uniformly signed basin-wide mode (USBM) and Indian Ocean dipole mode (IODM), respectively. The SSTA associated with USBM are prevailing decadal to interdecadal variability characterized by a unanimous pattern, while the IODM mainly represents interannual variability of SSTA. (2) When positive (negative) IODM exists over the tropical Indian Ocean during the preceding fall,the SCS summer monsoon will be weak (strong). The negative correlation between the interannual variability of IODM and that of SCS summer monsoon is significant during the warm phase of long-term trend but insignificant during the cool phase. (3) When the SCS summer monsoon is strong (weak), the IODM will be in its positive (negative) phase during the following fall season. The positive correlation between the interannual variability of SCS summer monsoon and that of IODM is significant during both the warm and cool phase of the long-term trend, but insignificant during the transition between the two phases.

  16. Application of GIS-based SCS-CN method in West Bank catchments, Palestine

    Directory of Open Access Journals (Sweden)

    Sameer SHADEED

    2010-03-01

    Full Text Available Among the most basic challenges of hydrology are the prediction and quantification of catchment surface runoff. The runoff curve number (CN is a key factor in determining runoff in the SCS (Soil Conservation Service based hydrologic modeling method. The traditional SCS-CN method for calculating the composite curve number is very tedious and consumes a major portion of the hydrologic modeling time. Therefore, geographic information systems (GIS are now being used in combination with the SCS-CN method. This paper assesses the modeling of flow in West Bank catchments using the GIS-based SCS-CN method. The West Bank, Palestine, is characterized as an arid to semi-arid region with annual rainfall depths ranging between 100 mm in the vicinity of the Jordan River to 700 mm in the mountains extending across the central parts of the region. The estimated composite curve number for the entire West Bank is about 50 assuming dry conditions. This paper clearly demonstrates that the integration of GIS with the SCS-CN method provides a powerful tool for estimating runoff volumes in West Bank catchments, representing arid to semi-arid catchments of Palestine.

  17. Performance of LYSO and CeBr3 crystals readout by silicon photomultiplier arrays as compact detectors for space based applications

    Science.gov (United States)

    Kryemadhi, A.; Barner, L.; Grove, A.; Mohler, J.; Sisson, C.; Roth, A.

    2017-02-01

    Space based MeV range gamma rays have been largely unexplored due to the difficulty associated with the measurements; however they address a broad range of astrophysical questions, including indirect searches for dark matter. To address these challenges and yet have compact instruments, the next generation experiments would need detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled to compact photo-detectors are an ideal option. In this work we have investigated the LYSO and CeBr3 crystal scintillators because of their high light yield, fast decay time, and small radiation length. We have used the silicon photomultiplier arrays as photo-detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic fields. We studied the gamma rays response for the 1.6 cm × 1.6 cm × 4.0 cm LYSO crystals and a 1.3 cm × 1.3 cm × 1.3 cm CeBr3 crystal readout by 4 × 4 SensL arrays (ArrayC30035). The crystal self-absorption and timing resolution have been examined along with linearity and energy resolution. The DRS4 evaluation board was used for acquisition of the events.

  18. Third-harmonic generation in silicon and photonic crystals of macroporous silicon in the spectral intermediate-IR range; Erzeugung der Dritten Harmonischen in Silizium und Photonischen Kristallen aus makroporoesem Silizium im spektralen mittleren IR-Bereich

    Energy Technology Data Exchange (ETDEWEB)

    Mitzschke, Kerstin

    2007-11-01

    Nonlinear optical spectroscopy is a powerful method to study surface or bulk properties of condensed matter. In centrosymmetric materials like silicon even order nonlinear optical processes are forbidden. Besides self-focussing or self phase modulation third-harmonic-generation (THG) is the simplest process that can be studied. This work demonstrates that THG is a adapted non-contact and non-invasive optical method to get information about bulk structures of silicon and Photonic crystals (PC), consisting of silicon. Until now most studies are done in the visible spectral range being limited by the linear absorption losses. So the extension of THG to the IR spectral range is extremely useful. This will allow the investigation of Photonic Crystals, where frequencies near a photonic bandgap are of special interest. 2D- photonic structures under investigation were fabricated via photoelectrochemical etching of the Si (100) wafer (thickness 500 {mu}m) receiving square and hexagonal arranged pores. The typical periodicity of the structures used is 2 {mu}m and the length of the pores reached to 400 {mu}m. Because of stability the photonic structures were superimposed on silicon substrate. The experimental set-up used for the THG experiments generates tuneable picosecond IR pulses (tuning range 1500-4000 cm{sup -1}). The IR-pulse hit the sample either perpendicular to the sample surface or under an angle {theta}. The sample can be rotated (f) around the surface normal. The generated third harmonic is analysed by a polarizer, spectrally filtered by a polychromator and registered by a CCD camera. The setup can be used either in transmission or in reflection mode. Optical transmission and reflection spectra of the Si bulk correspond well with the theoretical description, a 4-fold and a 8-fold dependencies of the azimuth angle resulting in the structure of the x{sup (3)}-tensor of (100)-Si. The situation changes dramatically if the PC with hexagonal structure is investigated

  19. Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Chen Hang-Qiong; Shu Qin; Liu Shi-Rong; Qin Chao-Jian

    2012-01-01

    A new nanolaser concept using silicon quantum dots (QDs) is proposed.The conduction band opened by the quantum confinement effect gives the pumping levels.Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission.An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser.Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.

  20. Comparative analysis of four-wave mixing of optical pulses in slow- and fast-light regimes of a silicon photonic crystal waveguide.

    Science.gov (United States)

    Lavdas, Spyros; Panoiu, Nicolae C

    2015-09-15

    We present an in-depth study of four-wave mixing (FWM) of optical pulses in silicon photonic crystal waveguides. Our analysis is based on a rigorous model that includes all relevant linear and nonlinear optical effects and their dependence on the group velocity, as well as the influence of free carriers on pulse dynamics. In particular, we reveal key differences between FWM in the slow- and fast-light regimes and how they are related to the physical parameters of the pulses and waveguide. Finally, we illustrate how these results can be used to design waveguides with optimized FWM conversion efficiency.

  1. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Yutaka, E-mail: yutakaohno@imr.tohoku.ac.jp; Inoue, Kaihei; Fujiwara, Kozo; Deura, Momoko; Kutsukake, Kentaro; Yonenaga, Ichiro [Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Shimizu, Yasuo; Inoue, Koji; Ebisawa, Naoki; Nagai, Yasuyoshi [The Oarai Center, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

    2015-06-22

    Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

  2. An efficient light trapping scheme based on textured conductive photonic crystal back reflector for performance improvement of amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Peizhuan; Hou, Guofu, E-mail: gfhou@nankai.edu.cn; Huang, Qian; Zhao, Jing; Zhang, Jianjun, E-mail: jjzhang@nankai.edu.cn; Ni, Jian; Zhang, Xiaodan; Zhao, Ying [Tianjin Key Laboratory of Photoelectronic Thin-Film Devices and Technique, Institute of Photoelectronics, Nankai University, Tianjin 300071 (China); Fan, QiHua [Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, South Dakota 57007 (United States)

    2014-08-18

    An efficient light trapping scheme named as textured conductive photonic crystal (TCPC) has been proposed and then applied as a back-reflector (BR) in n-i-p hydrogenated amorphous silicon (a-Si:H) solar cell. This TCPC BR combined a flat one-dimensional photonic crystal and a randomly textured surface of chemically etched ZnO:Al. Total efficiency enhancement was obtained thanks to the sufficient conductivity, high reflectivity and strong light scattering of the TCPC BR. Unwanted intrinsic losses of surface plasmon modes are avoided. An initial efficiency of 9.66% for a-Si:H solar cell was obtained with short-circuit current density of 14.74 mA/cm{sup 2}, fill factor of 70.3%, and open-circuit voltage of 0.932 V.

  3. A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal

    Energy Technology Data Exchange (ETDEWEB)

    Wistisen, T. N. [Aarhus Univ. (Denmark); Uggerhoj, U. I. [Aarhus Univ. (Denmark); Wienands, U. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Markiewicz, T. W. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Noble, R. J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Benson, B. L. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Smith, T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Bagli, E. [Univ. of Ferrara (Italy); Bandiera, L. [Univ. of Ferrara (Italy); Germogli, G. [Univ. of Ferrara (Italy); Guidi, V. [Univ. of Ferrara (Italy); Mazzolari, A. [Univ. of Ferrara (Italy); Holtzapple, R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States); Tucker, S. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2015-12-03

    We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

  4. Estimating the SCS runoff curve number in forest catchments of Korea

    Science.gov (United States)

    Choi, Hyung Tae; Kim, Jaehoon; Lim, Hong-geun

    2016-04-01

    To estimate flood runoff discharge is a very important work in design for many hydraulic structures in streams, rivers and lakes such as dams, bridges, culverts, and so on. So, many researchers have tried to develop better methods for estimating flood runoff discharge. The SCS runoff curve number is an empirical parameter determined by empirical analysis of runoff from small catchments and hillslope plots monitored by the USDA. This method is an efficient method for determining the approximate amount of runoff from a rainfall even in a particular area, and is very widely used all around the world. However, there is a quite difference between the conditions of Korea and USA in topography, geology and land use. Therefore, examinations in adaptability of the SCS runoff curve number need to raise the accuracy of runoff prediction using SCS runoff curve number method. The purpose of this study is to find the SCS runoff curve number based on the analysis of observed data from several experimental forest catchments monitored by the National Institute of Forest Science (NIFOS), as a pilot study to modify SCS runoff curve number for forest lands in Korea. Rainfall and runoff records observed in Gwangneung coniferous and broad leaves forests, Sinwol, Hwasoon, Gongju and Gyeongsan catchments were selected to analyze the variability of flood runoff coefficients during the last 5 years. This study shows that runoff curve numbers of the experimental forest catchments range from 55 to 65. SCS Runoff Curve number method is a widely used method for estimating design discharge for small ungauged watersheds. Therefore, this study can be helpful technically to estimate the discharge for forest watersheds in Korea with more accuracy.

  5. SLUDGE PARTICLE SEPAPATION EFFICIENCIES DURING SETTLER TANK RETRIEVAL INTO SCS-CON-230

    Energy Technology Data Exchange (ETDEWEB)

    DEARING JI; EPSTEIN M; PLYS MG

    2009-07-16

    The purpose of this document is to release, into the Hanford Document Control System, FA1/0991, Sludge Particle Separation Efficiencies for the Rectangular SCS-CON-230 Container, by M. Epstein and M. G. Plys, Fauske & Associates, LLC, June 2009. The Sludge Treatment Project (STP) will retrieve sludge from the 105-K West Integrated Water Treatment System (IWTS) Settler Tanks and transfer it to container SCS-CON-230 using the Settler Tank Retrieval System (STRS). The sludge will enter the container through two distributors. The container will have a filtration system that is designed to minimize the overflow of sludge fines from the container to the basin. FAI/09-91 was performed to quantify the effect of the STRS on sludge distribution inside of and overflow out of SCS-CON-230. Selected results of the analysis and a system description are discussed. The principal result of the analysis is that the STRS filtration system reduces the overflow of sludge from SCS-CON-230 to the basin by roughly a factor of 10. Some turbidity can be expected in the center bay where the container is located. The exact amount of overflow and subsequent turbidity is dependent on the density of the sludge (which will vary with location in the Settler Tanks) and the thermal gradient between the SCS-CON-230 and the basin. Attachment A presents the full analytical results. These results are applicable specifically to SCS-CON-230 and the STRS filtration system's expected operating duty cycles.

  6. Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon

    Science.gov (United States)

    Drikis, Ivars; Plate, Matiss; Sennikovs, Juris; Virbulis, Janis

    2017-09-01

    Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is 5-11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line ( 8%) than the crystal ( 2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ridge compared with the round crystal.

  7. Monolithic LaBr3 : Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography

    NARCIS (Netherlands)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R.

    2012-01-01

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high gamma-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal

  8. Monolithic LaBr3 : Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography

    NARCIS (Netherlands)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R.

    2012-01-01

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high gamma-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays

  9. Silicon on-chip side-coupled high-Q micro-cavities for the multiplexing of high sensitivity photonic crystal integrated sensors array

    Science.gov (United States)

    Yang, Daquan; Wang, Chunhong; Yuan, Wei; Wang, Bo; Yang, Yujie; Ji, Yuefeng

    2016-09-01

    A novel two-dimensional (2D) silicon (Si) photonic crystal (PC) α-H0-slot micro-cavity with high Q-factor and high sensitivity (S) is presented. Based on the proposed α-H0-Slot micro-cavities, an optimal design of photonic crystal integrated sensors array (PC-ISA) on monolithic silicon on insulator (SOI) is displayed. By using finite-difference time-domain (FDTD) method, the simulation results demonstrate that both large S of 200 nm/RIU (RIU=refractive index unit) and high Q-factor >104 at telecom wavelength range can be achieved simultaneously. And the sensor figure of merit (FOM)>7000 is featured, an order of magnitude improvement over previous 2D PC sensors array. In addition, for the proposed 2D PC-ISA device, each sensor unit is shown to independently shift its resonance wavelength in response to the changes in refractive index (RI) and does not perturb the others. Thus, it is potentially an ideal platform for realizing ultra-compact lab-on-a-chip applications with dense arrays of functionalized spots for multiplexed sensing, and also can be used as an opto-fluidic architecture for performing highly parallel detection of biochemical interactions in aqueous environments.

  10. Incorporating two different chromophores onto a silicon atom: the crystal structure and photophysical properties of 9-{4-[(9,9-dimethyl-9H-fluoren-2-yl)dimethylsilyl]phenyl}-9H-carbazole.

    Science.gov (United States)

    Lee, Ah-Rang; Han, Won-Sik

    2015-03-01

    The crystal structure of the title bifunctional silicon-bridged compound, C(35)H(31)NSi, (I), has been determined. The compound crystallizes in the centrosymmetric space group P2(1)/c. In the crystal structure, the pairs of aryl rings in the two different chromophores, i.e. 9-phenyl-9H-carbazole and 9,9-dimethyl-9H-fluorene, are positioned orthogonally. In the crystal packing, no classical hydrogen bonding is observed. UV-Vis absorption and fluorescence emission spectra show that the central Si atom successfully breaks the electronic conjugation between the two different chromophores, and this was further analysed by density functional theory (DFT) calculations.

  11. Isolated Islands by Selective Local Oxidation (islo): a Silicon-On (soi) Technology for Nanoelectronic and Nanoelectromechanical Applications.

    Science.gov (United States)

    Arney, Susanne Christine

    The development of an advanced fully-integrated nanometer-scale isolation technology called the Isolated Islands of Substrate-Silicon by Selective Lateral Oxidation (ISLO) technology is reported. The versatility and applicability of the ISLO technology for diverse nanoelectronic and nanoelectromechanical devices and systems are described relative to the challenging issues of isolation and contacts. The basic ISLO structure is fabricated using electron beam lithography and standard VLSI reactive ion etching and oxidation processes. Single crystal silicon (SCS) islands 100-300-nm-wide, and 500 -2000-nm-tall are electrically and thermally isolated from the underlying substrate by selective lateral thermal oxidation at the base of the islands. Dislocation-free fully-isolated islands are obtained. Full-isolation of the basic ISLO structure depends on island linewidth, oxidation-masking film thicknesses, recess etch profile, and oxidation time and temperature. The extended ISLO technology provides 100-nm-wide, movable, suspended, high stiffness, low mass, SCS or SCS-dielectric-composite beam segments with integrated electrical contacts and metallization for high frequency (5-10 MHz) nanodynamic applications. Fixed or cantilevered beam segments are isolated from the underlying substrate -silicon by thermally grown oxide or an air-bridge. Wedge -pairs or tip-pairs vertically opposed across the isolation oxide or air-bridge have application to electron tunneling or field emission devices. A selectively-sharpened tip -above-a-tip structure is formed at the intersection of cantilevered beam segments. Vertical triple-tip and quadruple -tip structures are demonstrated. A new deep-submicron self-aligned sidewall source/drain, top-surface gate Thin -Film-Silicon-On-Insulator (TFSOI) MOSFET (ISLO FET) based on the inherently three-dimensional, non-planar ISLO structure is presented. Stress-related defect generation and dopant segregation during the oxidation, erosion of the high

  12. Experiments on air entrainment into SCS by vortex formation during mid-loop operation

    Energy Technology Data Exchange (ETDEWEB)

    Chug, Moon Ki; Song, Chul Hwa; Jung, Heung Joon; Won, Soon Yeon; Min, Kyung Ho; Chang, Keun Sun [Korea Atomic Energy Res. Inst., Taejon (Korea, Republic of)

    1994-05-01

    In this final report, the phenomena of air entrainment into SCS suction nozzle by vortex formation during Mid-Loop operation condition are experimentally investigated. The critical submergence is determined for various types of suction nozzle, and the measurements of velocity distribution are performed in the flow fields near the T-shaped suction nozzle. 11 refs., 41 figs., 13 tabs.

  13. Application of SCS Model in Estimation of Runoff from Small Watershed in Loess Plateau of China

    Institute of Scientific and Technical Information of China (English)

    LIU Xianzhao; LI Jiazhu

    2008-01-01

    Soil Conservation Service (SCS) model,developed by U.S.Soil Conservation Service in 1972,has been widely applied in the estimation of runoff from an small watershed.In this paper,based on the remote sensing geo-information data of land use and soil classification all obtained from Landsat images in 1996 and 1997 and conventional data of hydrology and meteorology,the SCS model was investigated for simulating the surface runoff for single rainstorm in Wangdonggou watershed,a typical small watershed in the Loess Plateau,located in Changwu County of Shaanxi Province of China.Wangdonggou watershed was compartmentalized into 28 sub-units according to natural draining division,and the table of curve number (CN) values fitting for Wangdonggou watershed was also presented.During the flood period from 1996 to 1997,the hydrograph of calculated runoff process using the SCS model and the hydrograph of observed runoff process coincided very well in height as well as shape,and the model was of high precision above 75%.It is indicated that the SCS model is legitimate and can be successfully used to simulate the runoff generation and the runoff process of typical small watershed based on the remote sensing geo-information in the Loess Plateau.

  14. Derivation of Adipocytes from Human Endometrial Stem Cells (EnSCs)

    Science.gov (United States)

    Ai, Jafar; Shahverdi, Ahmad Reza; Barough, Somayeh Ebrahimi; Kouchesfehani, Homa Mohseni; Heidari, Saeed; Roozafzoon, Reza; Verdi, Javad; Khoshzaban, Ahad

    2012-01-01

    Background Due to increasing clinical demand for adipose tissue, a suitable cell for reconstructive adipose tissue constructs is needed. In this study, we investigated the ability of Human Endometrial-derived stem cells (EnSCs) as a new source of mesenchymal stem cells to differentiate into adipocytes. EnSCs are the abundant and easy available source with no immunological response, for cell replacement therapy. Methods Single-cell suspensions of EnSCs were obtained from endometrial tissues from 10 women experiencing normal menstrual cycles, and were cultured at clonal density (10 cells/cm 2) or limiting dilution. Endometrial mesenchymal stem cell markers were examined flow cytometry. These cells were treated with adipogenic-inducing medium for 28 days. The adipogenic differentiation of the EnSC was assessed by cellular morphology and further confirmed by Oil Red O staining and RT-PCR. The BM-MSC differentiated into adipocytes in the presence of adipogenic stimuli for 3 weeks. Results The flow cytometric analysis showed that the cells were positive for CD90, CD105, CD146 and were negative for CD31, CD34.We showed that the key adipocytes marker PPARa was expressed in mRNA level after 28 days post treatment (PT). Conclusion According to our finding, it can be concluded that EnSCs represent a useful in vitro model for human adipogenesis, and provide opportunities to study the stages prior to commitment to the adipocyte lineage. PMID:23926540

  15. Beyond the SCS-CN method: A theoretical framework for spatially lumped rainfall-runoff response

    Science.gov (United States)

    Bartlett, M. S.; Parolari, A. J.; McDonnell, J. J.; Porporato, A.

    2016-06-01

    Since its introduction in 1954, the Soil Conservation Service curve number (SCS-CN) method has become the standard tool, in practice, for estimating an event-based rainfall-runoff response. However, because of its empirical origins, the SCS-CN method is restricted to certain geographic regions and land use types. Moreover, it does not describe the spatial variability of runoff. To move beyond these limitations, we present a new theoretical framework for spatially lumped, event-based rainfall-runoff modeling. In this framework, we describe the spatially lumped runoff model as a point description of runoff that is upscaled to a watershed area based on probability distributions that are representative of watershed heterogeneities. The framework accommodates different runoff concepts and distributions of heterogeneities, and in doing so, it provides an implicit spatial description of runoff variability. Heterogeneity in storage capacity and soil moisture are the basis for upscaling a point runoff response and linking ecohydrological processes to runoff modeling. For the framework, we consider two different runoff responses for fractions of the watershed area: "prethreshold" and "threshold-excess" runoff. These occur before and after infiltration exceeds a storage capacity threshold. Our application of the framework results in a new model (called SCS-CNx) that extends the SCS-CN method with the prethreshold and threshold-excess runoff mechanisms and an implicit spatial description of runoff. We show proof of concept in four forested watersheds and further that the resulting model may better represent geographic regions and site types that previously have been beyond the scope of the traditional SCS-CN method.

  16. PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

    Energy Technology Data Exchange (ETDEWEB)

    Peng, J.; Lau, S.T.; Chao, C.; Dai, J.Y.; Chan, H.L.W. [The Hong Kong Polytechnic University, Department of Applied Physics and Materials Research Center, Hong Kong (China); Luo, H.S. [Chinese Academy of Sciences, The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai (China); Zhu, B.P.; Zhou, Q.F.; Shung, K.K. [University of Southern California, Department of Biomedical Engineering and NIH Transducer Resource Center, Los Angeles, CA (United States)

    2010-01-15

    In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (k{sub t}) and high piezoelectric constant (d{sub 33}) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency. (orig.)

  17. PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers.

    Science.gov (United States)

    Peng, J; Lau, S T; Chao, C; Dai, J Y; Chan, H L W; Luo, H S; Zhu, B P; Zhou, Q F; Shung, K K

    2008-11-02

    In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (k(t)) and high piezoelectric constant (d(33)) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.

  18. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  19. Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation

    NARCIS (Netherlands)

    Dekkers, Jan M.; Nguyen, Duc Minh; Steenwelle, Ruud Johannes Antonius; te Riele, P.M.; Blank, David H.A.; Rijnders, Augustinus J.H.M.

    2009-01-01

    Crystalline Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an or

  20. Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: Implications for intrinsic point defect incorporation during crystal growth from a melt

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji; Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Gent 9000 (Belgium)

    2012-10-15

    The microscopic model of the Si (001) crystal surface was investigated by first principles calculations to clarify the behavior of intrinsic point defects near crystal surfaces. A c(4 x 2) structure model was used to describe the crystal surface in contact with vacuum. The calculations show lower formation energy near the surface and the existence of formation energy differences between the surface and the bulk for both types of intrinsic point defects. The tetrahedral (T)-site and the dumbbell (DB)-site, in which a Si atom is captured from the surface and forms a self-interstitial, are found as stable sites near the third atomic layer. The T-site has a barrier of 0.48 eV, whereas the DB-site has no barrier for the interstitial to penetrate into the crystal from the vacuum. Si atoms in a melt can migrate and reach at the third layer during crystal growth when bulk diffusion coefficient is used. Therefore, the melt/solid interface is always a source of intrinsic point defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Structural, elastic and electronic Properties of isotropic cubic crystals of carbon and silicon nanotubes : Density functional based tight binding calculations.

    Directory of Open Access Journals (Sweden)

    Alexander L. Ivanovskii

    2008-01-01

    Full Text Available Atomic models of cubic crystals (CC of carbon and graphene-like Si nanotubes are offered and their structural, cohesive, elastic and electronic properties are predicted by means of the DFTB method. Our main findings are that the isotropic crystals of carbon nanotubes adopt a very high elastic modulus B and low compressibility β, namely B = 650 GPa, β = 0.0015 1/GPa. In addition, these crystals preserve the initial conductivity type of their “building blocks”, i.e. isolated carbon and Si nanotubes. This feature may be important for design of materials with the selected conductivity type.

  2. Purcell enhancement of fast-dephasing spontaneous emission from electron-hole droplets in high-Q silicon photonic crystal nanocavities

    Science.gov (United States)

    Sumikura, Hisashi; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2016-11-01

    We have observed electron-hole droplet emission enhanced by silicon photonic crystal nanocavities with different Q values and simulated their Purcell effect using a semiclassical theory considering the temporal dephasing of the emission. When the photon loss rate of the nanocavities is smaller than the dephasing rate of the emission, the cavity-enhanced integrated photoluminescence (PL) intensity is unchanged by the cavity Q value. This is because the Purcell enhancement of the spontaneous emission rate is saturated in a high-Q region. In contrast, the peak intensity of the cavity-enhanced PL is proportional to the cavity Q value without saturation. These results suggest that a high-Q nanocavity is suitable for fabricating bright narrowband light emitting devices that concentrate the broadband emission energy of fast-dephasing emitters in a narrowband cavity resonance.

  3. The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1979-01-01

    Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. Results indicate that the coefficient of friction and groove height (corresponding to the wear volume) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease with an increase in solute content of binary alloys. A separate correlation exists between the solute to iron atomic radius ratio and the decreasing rates of change of coefficient of friction and groove height with increasing solute content. These rates of change are minimum at a solute to iron radius ratio of unity. They increase as the atomic ratio increases or decreases linearly from unity. The correlations indicate that atomic size is an important parameter in controlling friction and wear of alloys.

  4. QE measurement application for crystal silicon solar cells%QE测量在晶体硅太阳电池研究中的应用

    Institute of Scientific and Technical Information of China (English)

    朱朋建; 姜大伟; 李守卫; 杨广伟; 许志卫; 晏海刚

    2012-01-01

    介绍了量子效率测量的原理以及此项技术在太阳电池研究中的应用.通过对晶硅太阳电池量子效率的测量,分析了不同设备和工艺参数对太阳电池量子效率的影响,为优化生产工艺,提高电池性能提供有力的依据.%The paper describes the principle of quantum efficiency measurement and its application in research of solar cells. With the help of the measurements of the quantum efficiency of crystal silicon solar cells, the effects of different equipments and process parameters on quantum efficiency of solar cells are discussed. The quantum efficiency measurement provids a strong basis for optimizing process and improving cell performance.

  5. The behavior of single-crystal silicon to dynamic loading using in-situ X-ray diffraction and phase contrast imaging

    Science.gov (United States)

    Lee, Hae Ja; Xing, Zhou; Galtier, Eric; Arnold, Brice; Granados, Eduardo; Brown, Shaughnessy B.; Tavella, Franz; McBride, Emma; Fry, Alan; Nagler, Bob; Schropp, Andreas; Seiboth, Frank; Samberg, Dirk; Schroer, Christian; Gleason, Arianna E.; Higginbotham, Andrew

    Hydrostatic and uniaxial compression studies have revealed that crystalline silicon undergoes phase transitions from a cubic diamond structure to a variety of phases including orthorhombic Imma phase, body-centered tetragonal phase, and a hexagonal primitive phase. The dynamic response of silicon at high pressure, however, is not well understood. Phase contrast imaging has proven to be a powerful tool for probing density changes caused by the shock propagation into a material. In order to characterize the elastic and phase transitions, we image shock waves in Si with high spatial resolution using the LCLS X-ray free electron laser and Matter in Extreme Conditions instrument. In this study, the long pulse optical laser with pseudo-flat top shape creates high pressures up to 60 GPa. We measure the crystal structure by observing X-ray diffraction orthogonal to the shock propagation direction over a range of pressures. We describe the capability of simultaneously performing phase contrast imaging and in situ X-ray diffraction during shock loading and discuss the dynamic response of Si in high-pressure phases Use of the Linac Coherent Light Source (LCLS), SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515. The MEC instrument is supported by.

  6. Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Diamond and cubic boron nitride films have already been applied practically because of their excellent properties. The specific orientations of the films have special meaning on their application in optics and microelectronics fields. In this paper, the relative electron density differences of the interface between the different crystal planes of silicon substrate and those of diamond and cubic boron films are calculated with the empirical electron theory in solids and molecules. Analyses on the calculation results show that in the range of the researched films, the smaller the relative electron density difference between the film and the substrate is, the stabler the film is in thermodynamics. Therefore, the electron density difference is the essential factor of determining the orientation of the texture and heteroepitaxy of the films. The deductions accord well with the experimental facts. The calculation methods and the theory not only provide a new angle of view for the research of the growth mechanism of diamond film and cubic boron nitride film on the silicon substrate, but also provide a possible direction for the prediction of the orientation of other films.

  7. Amorphous silicon crystallization by laser. Report of the experiments at Frascati (Project Foto); Cristallizzazione di silicio amorfo via laser. Rapporto degli esperimenti a frascati (Progetto Foto)

    Energy Technology Data Exchange (ETDEWEB)

    Bollanti, S.; Di Lazzaro, P.; Murra, D. [ENEA, Centro Ricerche Frascati, Frascati, RM (Italy). Div. Fisica Applicata; Imparato, A.; Privato, C. [ENEA, Centro Ricerche Portici, Naples (Italy). Div. Fonti Rinnovabili; Carluccio, R.; Fortunato, G.; Mariucci, L.; Pecora, A. [CNR Istituto di Elettronica dello Stato Solido, Rome (Italy)

    2000-07-01

    The final goal of the Project FOTO is the construction of a laboratory in a clean room for the production of active matrix which can be used to obtain Active Matrix Liquid Crystal Displays (AMLCD). The AMLCD are based on Thin Film Transistors (TFT), which can be obtained by poly-silicon (poly-Si) thin films, achieved, e.g., by irradiating films of amorphous silicon (a-Si) by ultraviolet laser radiation. In this report, are presented the results of the a-Si irradiation by using the laser-facility Hercules (excimer XeCl, l=0,308 mm) done at the ENEA Frascati Centre. The transformation of a-Si into poly-Si is commented upon the variation of the space-time characteristics of the laser pulses, of the irradiation conditions and of the characteristics of the irradiated a-Si films. [Italian] Il macro-obiettivo del Progetto FOTO e' la realizzazione di un laboratorio in camera pulita per lo sviluppo di processi atti a fabbricare matrici attive utilizzabili per ottenere schermi piatti a cristalli liquidi (AMLCD, Active Matrix Liquid Crystal Display). Uno dei primi passi del processo consiste nel creare transistori a film sottile (TFT, Thin Film Transistor). A tal fine, e' necessario ottenere strati sottili di Silicio policristallino irragiando films di silicio amorfo con luce laser ultravioletta. In questo rapporto, sono presentati i risultati degli irraggiamenti di film sottili di silicio amorfo tramite la laser-facility Hercules (eccimero XeCl, l=0,308 mm) effettuati presso il C.R. ENEA di Frascati. La trasformazione di silicio amorfo in silicio policristallino cosi' ottenuta e' commentata al variare delle caratteristiche spazio-temporali dell'impulso laser, delle condizioni di irraggiamento e delle caratteristiche del film di silicio amorfo irraggiato.

  8. Detection of Cortical Oscillations Induced by SCS Using Power Spectral Density

    Directory of Open Access Journals (Sweden)

    P. Sovka

    2007-12-01

    Full Text Available Chronic, intractable pain of lower back and lower extremity might develop as the result of unsuccessful surgery of back. This state called failed-back surgery syndrome (FBSS cannot be effectively treated by pharmacotherapy. Electric stimulation of the dorsal spinal cord is applied to relieve the pain. According to the medical hypothesis, oscillatory activity, which might be related to the analgesic effects, may occur in the cortex during the stimulation. To confirm the presence of the SCS induced oscillations, a new method of detection was designed for this purpose. The analysis of EEG data was performed using power spectral density, confidence intervals, visualization and group statistic for its verification. Parameters of the method were experimentally optimized to maximize its reliability. During ongoing SCS, statistically significant changes were detected and localized at the stimulation frequency and/or its subharmonic or upper harmonic over central midline electrodes in eight patients.

  9. Patterned porous silicon photonic crystals with modular surface chemistry for spatial control of neural stem cell differentiation

    Science.gov (United States)

    Huang, Tiffany H.; Pei, Yi; Zhang, Douglas; Li, Yanfen; Kilian, Kristopher A.

    2016-05-01

    We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity.We present a strategy to spatially define regions of gold and nanostructured silicon photonics, each with materials-specific surface chemistry, for azide-alkyne cycloaddition of different bioactive peptides. Neural stem cells are spatially directed to undergo neurogenesis and astrogenesis as a function of both surface properties and peptide identity. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08327c

  10. Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.

    1980-01-01

    The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

  11. U.S.-Vietnamese Security Cooperation for Access to the SCS

    Science.gov (United States)

    2015-06-16

    of the claimants to islands in the SCS, China has more Coast Guard/MLE vessels than Japan, Indonesia , Malaysia, and the Philippines combined.7...economic collapse of the 1980s and fall of the Soviet Union. Vietnam’s leadership revamped its socialist market economy and enacted reforms in order...previously contested Paracel Islands). China sent approximately 80 vessels to escort the rig, including navy, MLE (Coast Guard), and fishing boats

  12. SUBSTITUENT CHEMICAL SHIFT (SCS) AND THE SEQUENCE STRUCTURE OF ETHYLENE-VINYL ALCOHOL COPOLYMERS

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zinan; TIAN Wenjing; WU Shengrong; DAI Yingkun; FENG Zhiliu; SHEN Lianfang; YUAN Hanzhen

    1992-01-01

    Three ethylene-vinyl alcohol copolymers were studied by means of the substituent chemical shift(SCS) method. The SCS parameters of hydroxy (-OH)in two different solvents were obtained: in deuterium oxide/phenol (20/80 W/W ) the parameters are S1 = 42.77 ± 0.08ppm, S2 = 7.15 ±0.06 ppm,S3(s )=-4.08±0.02ppm, S3(t)=-3.09±0.20ppm,S4=0.48±0.03ppm, S5 =0.26±0.05ppm. In o-dichlorobenzen-d4 S1(s)=44.79±0.61ppm, S2=7.40±0.00ppm, S3 (s)=-4.51±0.17ppm, S3 (t)= -3.13± 0.00 ppm, S4 =0 . 63±0.04ppm, S5=0.36±0.00ppm. Simultaneously the 13CNMR spectra of EVA copolymers were assigned by using the SCS parameters obtained.

  13. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  14. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  15. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm(2)/V·s and saturation current, I/lW > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  16. Optical constants of silicon carbide for astrophysical applications. II. Extending optical functions from IR to UV using single-crystal absorption spectra

    CERN Document Server

    Hofmeister, A M; Goncharov, A F; Speck, A K

    2009-01-01

    Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\\lambda \\sim$ 8--0.28 $\\mu$m) and used to improve the accuracy of optical functions ($n$ and $k$) from the infrared (IR) to the ultraviolet (UV). Comparison with previous $\\lambda \\sim$ 6--20 $\\mu$m thin-film spectra constrains the thickness of the films and verifies that recent IR reflectivity data provide correct values for $k$ in the IR region. We extract $n$ and $k$ needed for radiative transfer models using a new ``difference method'', which utilizes transmission spectra measured from two SiC single-crystals with different thicknesses. This method is ideal for near-IR to visible regions where absorbance and reflectance are low and can be applied to any material. Comparing our results with previous UV measurements of SiC, we distinguish between chemical and structural effects at high frequency. We find that for all spectral re...

  17. Deflection and Extraction of Pb Ions up to 33 TeV/c by a Bent Silicon Crystal

    Energy Technology Data Exchange (ETDEWEB)

    Arduini, G.; Biino, C.; Clement, M.; Cornelis, K.; Doble, N.; Elsener, K.; Ferioli, G.; Fidecaro, G.; Gatignon, L.; Grafstroem, P.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Weisse, E. [SL Division, CERN, CH-1211 Geneva 23 (Switzerland); Mo/ller, S.P.; Uggerho/j, E. [ISA, Aarhus University (Denmark); Taratin, A. [JINR, Dubna (Russia); Freund, A. [ESRF, Grenoble (France); Keppler, P.; Major, J. [MPI fuer Metallforschung, Stuttgart (Germany)

    1997-11-01

    The first results from an experiment to deflect a beam of fully stripped, ultrarelativistic Pb{sup 82+} ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c , by means of a bent crystal are reported. Deflection efficiencies are as high as 14{percent}, in agreement with theoretical estimates. In a second experiment a bent crystal was used to extract 270 GeV/c -per-charge Pb{sup 82+} (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10{percent} was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams. {copyright} {ital 1997} {ital The American Physical Society}

  18. Deflection and Extraction of Pb Ions up to 33 TeV/c by a Bent Silicon Crystal

    Science.gov (United States)

    Arduini, G.; Biino, C.; Clément, M.; Cornelis, K.; Doble, N.; Elsener, K.; Ferioli, G.; Fidecaro, G.; Gatignon, L.; Grafström, P.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Weisse, E.; Møller, S. P.; Uggerhøj, E.; Taratin, A.; Freund, A.; Keppler, P.; Major, J.

    1997-11-01

    The first results from an experiment to deflect a beam of fully stripped, ultrarelativistic Pb82+ ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c, by means of a bent crystal are reported. Deflection efficiencies are as high as 14%, in agreement with theoretical estimates. In a second experiment a bent crystal was used to extract 270 GeV/c-per-charge Pb82+ \\(22 TeV/c\\) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10% was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams.

  19. Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

    Science.gov (United States)

    Kamiyama, E.; Vanhellemont, J.; Sueoka, K.; Araki, K.; Izunome, K.

    2013-02-01

    When pulling large diameter Si crystals from a melt close to the Voronkov criterion, small changes in pulling speed and thermal gradient can lead to the formation of voids leading to detrimental pits on the polished wafer surface. The creation of voids is mainly due to the lowering of the vacancy formation energy due to increased thermal compressive stress. The small size and low density of the formed voids when pulling crystals close to the Voronkov criterion conditions are a challenge for wafer surface inspection tools and possible solutions are discussed.

  20. Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ruling, E-mail: chenrl04@mails.tsinghua.edu.cn [Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444 (China); Jiang Ranran; Lei Hong; Liang Min [Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer The impact of the porous silica clusters on a silicon substrate was studied by MD. Black-Right-Pointing-Pointer The porous cluster shows high MRR and low surface damage at an optimal pore size. Black-Right-Pointing-Pointer The high MRR is due to the combined effects of plough, adhesion and permeation. Black-Right-Pointing-Pointer The low surface damage is due to the decreasing of the penetration depth. Black-Right-Pointing-Pointer Enlarged contact area is more effective than increased penetration to enhance MRR. - Abstract: Molecular dynamics (MD) simulation is applied in analyzing the material removal mechanism of silicon substrate under the impact of large porous silica cluster with different pore diameters. With the increasing of the pore diameter of the porous cluster, the number of the atoms removed from the impact silicon surface will firstly increase and then decrease until the cluster is adhered to the substrate, which is due to the combinational effects of plough of the cluster, adhesion between the cluster and the substrate, and permeation of the substrate atoms through the pore of the cluster. And adhesion is the most significant one among these three effects. Meanwhile, the damage of the impact substrate will become weaker due to the decreasing of the penetration depth with the increasing of the pore diameter. In addition, it is found that the effect of an enlarged real contact area between the cluster and the substrate is more significant than that of deeper penetration of the cluster in order to enhance the material removal rate (MRR) during the impact process. These findings are instructive in optimizing the process parameters to obtain lower surface roughness and higher material removal rate during the chemical mechanical polishing process.

  1. Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing

    Energy Technology Data Exchange (ETDEWEB)

    Yafarov, R. K., E-mail: pirpc@yandex.ru; Shanygin, V. Ya. [Russian Academy of Sciences, Saratov Branch of the Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation)

    2016-01-15

    The morphological stability of atomically clean silicon (100) surface after low-energy microwave plasma-chemical etching in various plasma-forming media is studied. It is found that relaxation changes in the surface density and atomic bump heights after plasma processing in inert and chemically active media are multidirectional in character. After processing in a freon-14 medium, the free energy is minimized due to a decrease in the surface density of microbumps and an increase in their height. After argon-plasma processing, an insignificant increase in the bump density with a simultaneous decrease in bump heights is observed. The physicochemical processes causing these changes are considered.

  2. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  3. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    CERN Document Server

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T

    2016-01-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 um-long coupled L0-type photonic crystalmicrocavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystalmicrocavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystalmicrocavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 us, and a fall time of 18.5 us. The measured on-chip loss on the transmission band is as l...

  4. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination...

  5. SCS3 and YFT2 link transcription of phospholipid biosynthetic genes to ER stress and the UPR.

    Directory of Open Access Journals (Sweden)

    Robyn D Moir

    2012-08-01

    Full Text Available The ability to store nutrients in lipid droplets (LDs is an ancient function that provides the primary source of metabolic energy during periods of nutrient insufficiency and between meals. The Fat storage-Inducing Transmembrane (FIT proteins are conserved ER-resident proteins that facilitate fat storage by partitioning energy-rich triglycerides into LDs. FIT2, the ancient ortholog of the FIT gene family first identified in mammals has two homologs in Saccharomyces cerevisiae (SCS3 and YFT2 and other fungi of the Saccharomycotina lineage. Despite the coevolution of these genes for more than 170 million years and their divergence from higher eukaryotes, SCS3, YFT2, and the human FIT2 gene retain some common functions: expression of the yeast genes in a human embryonic kidney cell line promotes LD formation, and expression of human FIT2 in yeast rescues the inositol auxotrophy and chemical and genetic phenotypes of strains lacking SCS3. To better understand the function of SCS3 and YFT2, we investigated the chemical sensitivities of strains deleted for either or both genes and identified synthetic genetic interactions against the viable yeast gene-deletion collection. We show that SCS3 and YFT2 have shared and unique functions that connect major biosynthetic processes critical for cell growth. These include lipid metabolism, vesicular trafficking, transcription of phospholipid biosynthetic genes, and protein synthesis. The genetic data indicate that optimal strain fitness requires a balance between phospholipid synthesis and protein synthesis and that deletion of SCS3 and YFT2 impacts a regulatory mechanism that coordinates these processes. Part of this mechanism involves a role for SCS3 in communicating changes in the ER (e.g. due to low inositol to Opi1-regulated transcription of phospholipid biosynthetic genes. We conclude that SCS3 and YFT2 are required for normal ER membrane biosynthesis in response to perturbations in lipid metabolism and ER

  6. SCS3 and YFT2 link transcription of phospholipid biosynthetic genes to ER stress and the UPR.

    Directory of Open Access Journals (Sweden)

    Robyn D Moir

    2012-08-01

    Full Text Available The ability to store nutrients in lipid droplets (LDs is an ancient function that provides the primary source of metabolic energy during periods of nutrient insufficiency and between meals. The Fat storage-Inducing Transmembrane (FIT proteins are conserved ER-resident proteins that facilitate fat storage by partitioning energy-rich triglycerides into LDs. FIT2, the ancient ortholog of the FIT gene family first identified in mammals has two homologs in Saccharomyces cerevisiae (SCS3 and YFT2 and other fungi of the Saccharomycotina lineage. Despite the coevolution of these genes for more than 170 million years and their divergence from higher eukaryotes, SCS3, YFT2, and the human FIT2 gene retain some common functions: expression of the yeast genes in a human embryonic kidney cell line promotes LD formation, and expression of human FIT2 in yeast rescues the inositol auxotrophy and chemical and genetic phenotypes of strains lacking SCS3. To better understand the function of SCS3 and YFT2, we investigated the chemical sensitivities of strains deleted for either or both genes and identified synthetic genetic interactions against the viable yeast gene-deletion collection. We show that SCS3 and YFT2 have shared and unique functions that connect major biosynthetic processes critical for cell growth. These include lipid metabolism, vesicular trafficking, transcription of phospholipid biosynthetic genes, and protein synthesis. The genetic data indicate that optimal strain fitness requires a balance between phospholipid synthesis and protein synthesis and that deletion of SCS3 and YFT2 impacts a regulatory mechanism that coordinates these processes. Part of this mechanism involves a role for SCS3 in communicating changes in the ER (e.g. due to low inositol to Opi1-regulated transcription of phospholipid biosynthetic genes. We conclude that SCS3 and YFT2 are required for normal ER membrane biosynthesis in response to perturbations in lipid metabolism and ER

  7. Validation of SCS CN Method for Runoff Estimation with Field Observed Regression Analysis Results in Venna Basin, Central India.

    Science.gov (United States)

    Katpatal, Y. B.; Paranjpe, S. V.; Kadu, M.

    2014-12-01

    Effective Watershed management requires authentic data of surface runoff potential for which several methods and models are in use. Generally, non availability of field data calls for techniques based on remote observations. Soil Conservation Services Curve Number (SCS CN) method is an important method which utilizes information generated from remote sensing for estimation of runoff. Several attempts have been made to validate the runoff values generated from SCS CN method by comparing the results obtained from other methods. In the present study, runoff estimation through SCS CN method has been performed using IRS LISS IV data for the Venna Basin situated in the Central India. The field data was available for Venna Basin. The Land use/land cover and soil layers have been generated for the entire watershed using the satellite data and Geographic Information System (GIS). The Venna basin have been divided into intercepted catchment and free catchment. Run off values have been estimated using field data through regression analysis. The runoff values estimated using SCS CN method have been compared with yield values generated using data collected from the tank gauge stations and data from the discharge stations. The correlation helps in validation of the results obtained from the SCS CN method and its applicability in Indian conditions. Key Words: SCS CN Method, Regression Analysis, Land Use / Land cover, Runoff, Remote Sensing, GIS.

  8. Deflection and extraction of Pb ions up to 33 TeV/c by a bent silicon crystal

    CERN Document Server

    Arduini, Gianluigi; Clément, M; Cornelis, Karel; Doble, Niels T; Elsener, K; Ferioli, G; Fidecaro, Giuseppe; Freund, A; Gatignon, L; Grafström, P; Gyr, Marcel; Herr, Werner; Keppler, P; Klem, J T; Major, J V; Mikkelsen, U; Møller, S P; Taratin, A M; Uggerhøj, Erik; Weisse, E

    1997-01-01

    The first results from an experiment to deflect a beam of fully stripped, ulta-relativistic Pb ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c, by means of a bent crystal are reported. Deflection efficiencies are as high as 14%, in agreement with theoretical predictions. In a second experiment a bent crsytal was used to extract 270 GeV/c per charge Pb82+ (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10% was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams.

  9. Oblique propagation of electrons in crystals of germanium and silicon at sub-Kelvin temperature in low electric fields

    CERN Document Server

    Cabrera, B; Moffatt, R; Sundqvist, K; Sadoulet, B

    2010-01-01

    We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors. These effects are pronounced at temperatures below ~1K and for electric fields below ~5V/cm because inter-valley transitions are energetically suppressed forcing electrons to remain in the same band valley throughout their motion and the valleys to separate in position space. To model, we start with an isotropic approximation which incorporates the average properties of the crystals with one phonon mode, and include the ellipsoidal electron valleys by transforming into a momentum space where constant energy surfaces are spheres. We include comparisons of simulated versus measured drift velocities for holes and electrons, and explain the large discrepancy between electrons and holes for shared events in adjacent electrodes.

  10. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

  11. Simulation and research of the gamma-ray detectors based on the CsI crystals and silicon photomultipliers

    Science.gov (United States)

    Romanova, G. E.; Radilov, A. V.; Denisov, V. M.; Bokatyi, I. O.; Titov, A. B.

    2017-05-01

    The paper discusses the problems of development of the SiPM-based gamma-detectors. The main focus is on the most effective coupling between the scintillation crystal and the SiPM. We have used a simple optical model to study the different schemes of the coupling and analyze these variants from the point of view of efficiency and uniformity of the signal on the SiPM areas. We present the process and the results of the modeling.

  12. Highly flexible method for the fabrication of photonic crystal slabs based on the selective formation of porous silicon.

    Science.gov (United States)

    Recio-Sánchez, Gonzalo; Dang, Zhiya; Torres-Costa, Vicente; Breese, Mark Bh; Martín-Palma, Raul-Jose

    2012-08-09

    A novel fabrication method of Si photonic slabs based on the selective formation of porous silicon is reported. Free-standing square lattices of cylindrical air holes embedded in a Si matrix can be achieved by proton beam irradiation followed by electrochemical etching of Si wafers. The photonic band structures of these slabs show several gaps for the two symmetry directions for reflection through the z-plane. The flexibility of the fabrication method for tuning the frequency range of the gaps over the near- and mid-infrared ranges is demonstrated. This tunability can be achieved by simply adjusting the main parameters in the fabrication process such as the proton beam line spacing, proton fluence, or anodization current density. Thus, the reported method opens a promising route towards the fabrication of Si-based photonic slabs, with high flexibility and compatible with the current microelectronics industry.

  13. Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module

    Science.gov (United States)

    Kudla, Ch.; Blumenau, A. T.; Büllesfeld, F.; Dropka, N.; Frank-Rotsch, Ch.; Kiessling, F.; Klein, O.; Lange, P.; Miller, W.; Rehse, U.; Sahr, U.; Schellhorn, M.; Weidemann, G.; Ziem, M.; Bethin, G.; Fornari, R.; Müller, M.; Sprekels, J.; Trautmann, V.; Rudolph, P.

    2013-02-01

    For the first time a heater-magnet module (HMM), simultaneously generating heat and a traveling magnetic field (TMF), was constructed for an industrial scale G5 multi-crystalline Si crystallizer and extensively tested. Effective melt mixing and precise control of the interface shape have been demonstrated using TMF, which resulted in ingots exhibiting superior properties, clearly proving the beneficial effects of the advanced convection control without affecting the stability of the Si3N4 crucible coating. Hence, most of the solidified Si volume showed very homogeneous IR transmission without inclusions. Dislocation densities were relatively low and bunching was only rarely observed, resulting in overall high carrier lifetimes. Therefore, our results demonstrate that a HMM configuration in an industrial Si crystallizer may successfully accomplish the following tasks: (i) good thermal stability and controllability of the melt-solid interface morphology, (ii) suppression of second phase inclusions, such as SiC and Si3N4, by mastering the mixing of the melt during the whole crystallization process, and (iii) no pronounced interaction between melt and container wall.

  14. Matrix fatigue crack development in a notched continuous fiber SCS-6/Ti-15-3 composite

    Science.gov (United States)

    Hillberry, B. M.; Johnson, W. S.

    1990-01-01

    In this study the extensive matrix fatigue cracking that has been observed in notched SCS-6/Ti-15-3 composites is investigated. Away from the notch a uniform spacing of the fatigue cracks develops. Closer to the notch, fiber-matrix debonding which occurs increases the crack spacing. Crack spacing and debond length determined from shear-lag cylinder models compare favorably with experimental observations. Scanning electron microscope (SEM) fractography showed that the principal fatigue crack initiation occurred around the zero degree fibers. Interface failure in the 90 degree plies does not lead to the development of the primary fatigue cracking.

  15. Selectively Transparent and Conducting Photonic Crystals and their Potential to Enhance the Performance of Thin-Film Silicon-Based Photovoltaics and Other Optoelectronic Devices

    Science.gov (United States)

    O'Brien, Paul G.

    2011-12-01

    The byproducts of human engineered energy production are increasing atmospheric CO2 concentrations well above their natural levels and accompanied continual decline in the natural reserves of fossil fuels necessitates the development of green energy alternatives. Solar energy is attractive because it is abundant, can be produced in remote locations and consumed on site. Specifically, thin-film silicon-based photovoltaic (PV) solar cells have numerous inherent advantages including their availability, non-toxicity, and they are relatively inexpensive. However, their low-cost and electrical performance depends on reducing their thickness to as great an extent as possible. This is problematic because their thickness is much less than their absorption length. Consequently, enhanced light trapping schemes must be incorporated into these devices. Herein, a transparent and conducting photonic crystal (PC) intermediate reflector (IR), integrated into the rear side of the cell and serving the dual function as a back-reflector and a spectral splitter, is identified as a promising method of boosting the performance of thin-film silicon-based PV. To this end a novel class of PCs, namely selectively transparent and conducting photonic crystals (STCPC), is invented. These STCPCs are a significant advance over existing 1D PCs because they combine intense wavelength selective broadband reflectance with the transmissive and conductive properties of sputtered ITO. For example, STCPCs are made to exhibit Bragg-reflectance peaks in the visible spectrum of 95% reflectivity and have a full width at half maximum that is greater than 200nm. At the same time, the average transmittance of these STCPCs is greater than 80% over the visible spectrum that is outside their stop-gap. Using wave-optics analysis, it is shown that STCPC intermediate reflectors increase the current generated in micromorph cells by 18%. In comparison, the more conventional IR comprised of a single homogeneous

  16. ELECTRON BOMBARDMENT OF SILICON SOLAR CELLS,

    Science.gov (United States)

    DAMAGE, ELECTRON IRRADIATION, SOLAR CELLS , SILICON, PHOTOELECTRIC CELLS(SEMICONDUCTOR), QUARTZ, GLASS, SHIELDING, CRYSTAL DEFECTS, HEAT TREATMENT, ARTIFICIAL SATELLITES, SPACECRAFT, GRAPHICS, GRAPHICS.

  17. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    Science.gov (United States)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  18. Synthesis and characterization of C3N4 crystal ( Ⅰ )——Growth on silicon

    Institute of Scientific and Technical Information of China (English)

    王恩哥; 陈岩; 郭丽萍; 陈峰

    1997-01-01

    A successful experimental synthesis of pure crystalline β-and α-C3N4 films on Si( 100) substrate was carried out by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). It is found that a mixed-phase C3-x-Six-Ny buffer layer was formed between the Si substrate and the C-N film. A "lattice match selection" was proposed to study the growth mechanism of C3N4 clusters composed of many crystal columns with hexagonal facets.

  19. Ultracompact 160 Gbaud all-optical demultiplexing exploiting slow light in an engineered silicon photonic crystal waveguide.

    Science.gov (United States)

    Corcoran, Bill; Pelusi, Mark D; Monat, Christelle; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Eggleton, Benjamin J

    2011-05-01

    We demonstrate all-optical demultiplexing of a high-bandwidth, time-division multiplexed 160 Gbit/s signal to 10 Gbit/s channels, exploiting slow light enhanced four-wave mixing in a dispersion engineered, 96 μm long planar photonic crystal waveguide. We report error-free (bit error rate<10⁻⁹) operation of all 16 demultiplexed channels, with a power penalty of 2.2-2.4 dB, highlighting the potential of these structures as a platform for ultracompact all-optical nonlinear processes.

  20. Extraction of 22 TeV/c Lead Ions from the CERN SPS using a Bent Silicon Crystal

    Science.gov (United States)

    Herr, W.; Elsener, K.; Fidecaro, G.; Gyr, M.; Klem, J.; Weisse, E.

    1997-05-01

    The extraction of protons from the halo of a circulating beam has been repeatedly demonstrated at the SPS. In a recent experiment a coasting lead ion beam was available at a momentum of 270 GeV/c/Z corresponding to a total momentum of 22 TeV/c per ion and the possibility to extract ultrarelativistic lead ions with a bent crystal could be demonstrated for the first time. We present the experimental challenges, the measurements performed during this experiment and the first results.

  1. Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment.

    Science.gov (United States)

    Jiapeng, Sun; Cheng, Li; Han, Jing; Ma, Aibin; Fang, Liang

    2017-08-31

    Silicon has such versatile characteristics that the mechanical behavior and deformation mechanism under contact load are still unclear and hence are interesting and challenging issues. Based on combined study using molecular dynamics simulations and experiments of nanoindentation on Si(100), the versatile deformation modes, including high pressure phase transformation (HPPT), dislocation, median crack and surface crack, were found, and occurrence of multiple pop-in events in the load-indentation strain curves was reported. HPPTs are regard as the dominant deformation mode and even becomes the single deformation mode at a small indentation strain (0.107 in simulations), suggesting the presence of a defect-free region. Moreover, the one-to-one relationship between the pop-in events and the deformation modes is established. Three distinct mechanisms are identified to be responsible for the occurrence of multiple pop-in events in sequence. In the first mechanism, HPPTs from Si-I to Si-II and Si-I to bct5 induce the first pop-in event. The formation and extrusion of α-Si outside the indentation cavity are responsible for the subsequent pop-in event. And the major cracks on the surface induces the pop-in event at extreme high load. The observed dislocation burst and median crack beneath the transformation region produce no detectable pop-in events.

  2. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Science.gov (United States)

    Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

    2016-07-01

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  3. Study of silicon photomultipliers for the readout of scintillator crystals in the proposed GRIPS \\gamma-ray astronomy mission

    CERN Document Server

    Ulyanov, Alexei; McBreen, Sheila; Foley, Suzanne; Byrne, David

    2013-01-01

    Among the top priorities for high-energy astronomy in the coming decade are sensitive surveys in the hard X-ray/soft \\gamma-ray (10-600 keV) and medium-energy \\gamma-ray (0.2-80 MeV) bands. Historically, observations in the soft and medium energy \\gamma-ray bands have been conducted using detectors based on inorganic scintillators read out by photo-multiplier tubes (PMTs). These observations were limited by the modest energy and time resolution of traditional scintillator materials (e.g. NaI and CsI), and by the demands on mission resources imposed by the bulky, fragile, high-voltage PMTs. Recent technological advances in the development of both new scintillator materials (e.g. LaBr3:Ce, L(Y)SO) and new scintillation light readout devices (e.g. Silicon Photo-Multipliers) promise to greatly improve the observational capabilities of future scintillator-based \\gamma--ray telescopes, while retaining the relative simplicity, reliability, large collection volumes, and low-cost of scintillator instruments. We presen...

  4. STUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICES

    Directory of Open Access Journals (Sweden)

    Lebedev Alexander Alexandrovich

    2014-01-01

    Full Text Available Due to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. In 1981 the blue SiC LED’s emission spectrum over time degradation was detected. Later, after the creation of power rectifier diodes, based on SiC, it was found that their characteristics are also deteriorated with increase of operating time. It was found that the cause of degradation are the so-called “Stacking Faults” (SF -i.e., the formation of cubic SiC layers inside the hexagonal SiC diodes during direct current flow through them. However, it is easy to assume that this degradation mechanism is absent in devices, completely based on cubic polytype 3C-SiC. This study is dedicated to the study of possibility of creating device heterostructures based on 3C-SiC. It is shown that the heterojunction between SiC polytypes may be more structurally perfect than heterojunctions between semiconductors with different chemical nature. The conclusion on perspectivity of SiC-based heterostructures application in modern electronic devices is made.

  5. Design of an elliptic spot illumination system in LED-based color filter-liquid-crystal-on-silicon pico projectors for mobile embedded projection.

    Science.gov (United States)

    Chen, Enguo; Yu, Feihong

    2012-06-01

    We present an elliptic spot illumination system for a color filter-liquid-crystal-on-silicon (CF-LCoS) pico projector employing a specifically designed free-form lens and a cylindrical lens to improve on previous designs in terms of optical efficiency while yielding an ultracompact and low-cost optical architecture. The detailed design description of the optical system is thoroughly investigated. Simulation results coincide well with the theoretical calculation. The single 1  mm×1  mm LED chip-powered optical engine, which employs a CF-LCoS panel with a diagonal of 0.28 in and an aspect ratio of 4:3, has an estimated output efficiency over 9.8% (11.8 lm@1 W) and an ANSI 9-point uniformity over 88.5%, with the ultrasmall volume 24  mm×19  mm×7  mm. Compared to the circular spot-illuminated projection system, a total increment of about 23% of system efficiency is available with this improved optical engine. It is believed that there would be a huge market potential to commercialize our design.

  6. Control of Microstructural Development in Reaction—Bonded Silicon Nitride(RBSN) by Seeding With β—Si3N4 Single Crystals

    Institute of Scientific and Technical Information of China (English)

    K.Amoako-Appiagyei; ByungSeiJun; 等

    1998-01-01

    The addition of β-Si3N4 seed grains to a ceramic powder is an effective means of controlling the microstructural evolution,In this work addition of β-Si3N4 seed grains gave rise to a bi-modal microstructure made up of large rod-lkike grains that grew from the added seed during the liquid phase sintering process and the usua elongated grains which are developed from the α→β transformation process in silicon nitride,The morphology of te grains that were grown epitaxially from the seed was influenced by the size and shape of the seed crystals;the relatively large and elongated seed grains gave rise to large rod-like grains whilst those with equiaxed-like shape gave rise to large grains similar in shape to the seed from which they were grown.The evolution of the large rod-like grains and the resultant bi-modal microstructure led to a considerable improvement in the mechanical properties.

  7. Thick silicon growth techniques

    Science.gov (United States)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  8. Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate%Si(111)衬底上生长GaN晶环的研究

    Institute of Scientific and Technical Information of China (English)

    王显明; 孙振翠; 魏芹芹; 王强; 曹文田; 薛成山

    2004-01-01

    利用热壁化学气相沉积在Si(111)衬底上获得GaN晶环,采用扫描电镜(SEM)、选择区电子衍射(SAED)、X射线衍射(XRD),光致发光(PL)谱和傅里叶红外吸收谱(FTIR)对晶环的组成、结构、形貌和光学特性进行分析.初步结果证明:在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶环.SEM显示在均匀的薄膜上出现直径约为10μm的5晶环,由XRD和SAED的分析证实晶环呈六方纤矿多晶结构,FTIR显示GaN薄膜的主要成分为GaN,同时含有少量的C污染,PL测试表明晶环呈现不同于GaN薄膜的发光特性.%The crystal loops of Gallium nitride (GaN) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. Scanning electron microscopy (SEM), selected area electron diffraction (SAED), x-ray diffraction (XRD), photoluminescence (PL) and Fourier Transform Infrared transmission (FTIR) Spectroscopy were employed to analyze the surface morphology, structure and optical properties of GaN layer.SEM image shows five half-loops attached to a crystal string side by side in the uniform films. XRD, SAED patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. FTIR pattern shows the main composition of the film is GaN and it contains trifle carbon contamination. New feature is found in PL pattern of the crystal loops,which is different from the bulk GaN films.

  9. Label-free detection of glycated haemoglobin in human blood using silicon-based photonic crystal nanocavity biosensor

    Science.gov (United States)

    Olyaee, Saeed; Seifouri, Mahmood; Mohsenirad, Hamideh

    2016-07-01

    In this paper, we describe a two-dimensional photonic crystal-based biosensor that consists of a waveguide and a nanocavity with high sensitivity. A new method is employed for increasing sensitivity of the biosensor. The simulation results show that biosensor is highly sensitive to the refractive index (RI) variations due to injected biomaterials, like glycated haemoglobin, into the sensing surface. The proposed biosensor is designed for the wavelength range of 1514.4-1896.3 nm. The sensitivity and the quality factor are calculated to be 3000 and 272.43 nm/RIU, respectively. The designed structure can detect a 0.002 change in the RI via resonant wavelength shift of 0.9 nm. The band diagram and transmission spectra are computed using plane wave expansion and finite difference time domain methods.

  10. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com; Osminkina, L. A. [Moscow State University, Faculty of Physics (Russian Federation); Sivakov, V. [Leibniz Institute of Photonic Technology (Germany); Lysenko, V. [Institut National des Sciences Appliquées (INSA) de Lyon, Nanotechnology Institute of Lyon (France); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2014-12-15

    Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1–20 Ω · cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20–200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 μm is 3–5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 μm is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.

  11. Damage creation in silicon single crystals irradiated with 200 keV/atom Au{sub n}{sup +} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Canut, B. E-mail: bruno.canut@dpmsun1.univ-lyon1.fr; Fallavier, M.; Marty, O.; Ramos, S.M.M

    2000-04-01

    Silicon wafers of (1 0 0) orientation were irradiated with Au{sub n} cluster beams (1{<=}n{<=}7) produced by the 2.5 MV Van de Graaff accelerator of the Institut de Physique Nucleaire de Lyon equipped with a liquid metal source. The incident energy was of 200 keV per gold atom, which corresponds to a slowing-down mainly governed by elastic processes (nuclear energy loss of Au{sup +} ions: 3 keV nm{sup -1}). All the irradiations were performed at room temperature with fluences up to 5x10{sup 14} Au (at. cm{sup -2}). The typical beam currents varied from 1.5 nA for Au{sup +} down to 20 pA for Au{sub 7}{sup +}. The radiation-induced disorder was measured by means of Rutherford backscattering spectrometry in channeling geometry (RBS-C), using a {sup 4}He{sup +} beam accelerated at 2 MV. From the fluence evolution of the lattice disorder at the target surface, we evidence that polyatomic projectiles produce more defects per incident atom than single Au{sup +} ions. As an example we measured damage cross-sections per incident Au atom of 12.5 and 2.7 nm{sup 2} for Au{sub 7}{sup +} and Au{sup +} projectiles, respectively. This cluster effect was ascribed to the high density of nuclear energy deposited within the cascade. Transmission electron microscopy (TEM) was performed on samples irradiated at low fluences (10{sup 9} at. cm{sup -2}) in order to visualize each projectile impact.

  12. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  13. Research on Melt Level Control Method for 12 Inch Silicon Single Crystal Growth%12英寸硅单晶生长过程中熔液面位置控制方法研究

    Institute of Scientific and Technical Information of China (English)

    朱亮; 周旗钢; 戴小林; 张果虎; 曹建伟; 邱敏秀

    2011-01-01

    During 12 inch silicon single crystal growth for IC, the silicon melt level has to be controlled to meet the requirements on temperature gradient near the interface. Such traditional methods as setting CL/ SL (CL is the crucible lift rate, SL is the seed lift rate) and laser distance measurement can not meet the requirement of CZ silicon crystal growth in some case. In this article, the melt level is measured by capturing the reflected image of the reference using CCD, and the melt level is controlled by adjusting the crucible lift rate, this technology can finally meet the requirement of 12 inch silicon crystal growth.%集成电路用12英寸硅单晶生长过程中,为满足晶体生长界面附近温度梯度的要求,需要测量并控制晶体生长过程中硅熔体液面位置.传统的设定坩埚上升速度和激光测距的方法有时不能适应直拉硅单晶生长技术的发展.本文提出并实现了一种采用CCD图像捕捉和测量液面位置的方法,结合调节坩埚上升速度来控制液面高度,最终可以满足生长集成电路用12英寸硅单晶的需要.

  14. High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics.

    Science.gov (United States)

    Xu, Mingkun; Wang, Jimmy; Xue, Zhaoguo; Wang, Junzhuan; Feng, Ping; Yu, Linwei; Xu, Jun; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

    2017-07-27

    High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm(2) V(-1) s(-1) and an excellent subthreshold swing of only 163 mV dec(-1), via a low temperature high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays in particular.

  15. In Situ Laser Crystallization of Amorphous Silicon for TFT Applications: Controlled Ultrafast Studies in the Dynamic TEM

    Energy Technology Data Exchange (ETDEWEB)

    Taheri, M; Teslich, N; Lu, J P; Morgan, D; Browning, N

    2008-02-08

    An in situ method for studying the role of laser energy on the microstructural evolution of polycrystalline Si is presented. By monitoring both laser energy and microstructural evolution simultaneously in the dynamic transmission electron microscope, information on grain size and defect concentration can be correlated directly with processing conditions. This proof of principle study provides fundamental scientific information on the crystallization process that has technological importance for the development of thin film transistors. In conclusion, we successfully developed a method for studying UV laser processing of Si films in situ on nanosecond time scales, with ultimate implications for TFT application improvements. In addition to grain size distribution as a function of laser energy density, we found that grain size scaled with laser energy in general. We showed that nanosecond time resolution allowed us to see the nucleation and growth front during processing, which will help further the understanding of microstructural evolution of poly-Si films for electronic applications. Future studies, coupled with high resolution TEM, will be performed to study grain boundary migration, intergranular defects, and grain size distribution with respect to laser energy and adsorption depth.

  16. Fatigue crack growth study of SCS6/Ti-15-3 composite

    Science.gov (United States)

    Kantzos, P.; Telesman, J.

    1990-01-01

    A study was performed to determine the fatigue crack growth (FCG) behavior and the associated fatigue damage processes in a (0)8- and (90)8-oriented SCS6/Ti-15-3 composite. Companion testing was also done on identically processed Ti-15-3 unreinforced material. The active fatigue crack growth failure processes were very similar for both composite orientations tested. For both orientations, fatigue crack growth was along the fiber direction. It was found that the composite constituent most susceptible to fatigue damage was the interface region and, in particular, the carbon coating surrounding the fiber. The failure of the interface region led to crack initiation and also strongly influenced the FCG behavior in this composite. The failure of the interface region was apparently driven by normal stresses perpendicular to the fiber direction. The FCG rates were considerably higher for the (90)8-oriented CT specimens in comparison to the unreinforced material.

  17. Improved Algorithm of SCS-CN Model Parameters in Typical Inland River Basin in Central Asia

    Science.gov (United States)

    Wang, Jin J.; Ding, Jian L.; Zhang, Zhe; Chen, Wen Q.

    2017-02-01

    Rainfall-runoff relationship is the most important factor for hydrological structures, social and economic development on the background of global warmer, especially in arid regions. The aim of this paper is find the suitable method to simulate the runoff in arid area. The Soil Conservation Service Curve Number (SCS-CN) is the most popular and widely applied model for direct runoff estimation. In this paper, we will focus on Wen-quan Basin in source regions of Boertala River. It is a typical valley of inland in Central Asia. First time to use the 16m resolution remote sensing image about high-definition earth observation satellite “Gaofen-1” to provide a high degree accuracy data for land use classification determine the curve number. Use surface temperature/vegetation index (TS/VI) construct 2D scatter plot combine with the soil moisture absorption balance principle calculate the moisture-holding capacity of soil. Using original and parameter algorithm improved SCS-CN model respectively to simulation the runoff. The simulation results show that the improved model is better than original model. Both of them in calibration and validation periods Nash-Sutcliffe efficiency were 0.79, 0.71 and 0.66,038. And relative error were3%, 12% and 17%, 27%. It shows that the simulation accuracy should be further improved and using remote sensing information technology to improve the basic geographic data for the hydrological model has the following advantages: 1) Remote sensing data having a planar characteristic, comprehensive and representative. 2) To get around the bottleneck about lack of data, provide reference to simulation the runoff in similar basin conditions and data-lacking regions.

  18. Preventing Freezeup in Silicon Ribbon Growth

    Science.gov (United States)

    Mackintosh, B.

    1983-01-01

    Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

  19. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  20. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  1. Photoluminescence of excitons bound to isoelectronic B{sub 80}{sup 4} (1.10680 eV) centers in single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kaminskii, A.S.; Lavrov, E.V. [Inst. of Radio Engineering and Electronics, Moscow (Russian Federation)

    1995-09-01

    Excitons bound to isoelectronic B{sub 80}{sup 4} centers, which appear in pure single-crystal silicon (having a density of electrically active impurities < 10{sup 13} cm{sup {minus}3}) after neutron irradiation followed by annealing at 385{degrees}C, have been investigated. The recombination luminescence spectra of excitons bound to these centers have been investigated. The recombination luminescence spectra of excitons bound to these centers have been investigated in magnetic fields ranging from 0 to 6 T and with uniaxial compression of the samples in the (001), (111), and (110) directions. A high-resolution Fabry-Perot spectrometer has been used for spectral analysis of the recombination luminescence. The fine structure of the ground state of excitons bound to B{sub 80}{sup 4} centers has been observed. It has been established that the ground state is split in two ({approx}65{mu}3V) and that the optical transition from the lower state is forbidden by the selection rules and appears in the recombination luminescence spectra only in a magnetic field. It has been shown that B{sub 80}{sup 4} centers are of the trigonal type and have a symmetry corresponding to the C{sub 3v} point group. The Hamiltonian for excitons bound to B{sub 80}{sup 4} centers in a magnetic field and in a strain field has been constructed. The structure of the excitonic terms can be explained, if the exchange interaction between the electron and the hole and the interaction of the electron and the hole with the defect potential are taken into account. The splitting of the recombination luminescence lines associated with uniaxial straining of the crystals in the (001), (111), and (011) directions is explained. A comparison of the Zeeman spectra with the results of the calculation yields the g factors of an electron and a hole bound to an isoelectronic B{sub 80}{sup 4} center, which are equal to g{sub e}=2,g{sub {perpendicular}}{sup h}=2.68, and g{sub {parallel}}{sup h}=1.27. 11 refs., 5 figs.

  2. 在单晶硅片上直接电化学沉积制备镍反opal光子晶体%Fabrication of Ni inverse opal photonic crystals on silicon wafer by electrodeposition

    Institute of Scientific and Technical Information of China (English)

    许静

    2012-01-01

    采用电化学沉积工艺直接向组装在单晶硅片上的聚苯乙烯胶体晶体中填充金属Ni,成功制备了Ni的反opal光子晶体.采用线性扫描伏安法研究了单晶硅表面的化学刻蚀对Ni的电化学沉积过程的影响,并采用扫描电子显微镜(SEM)、X射线衍射等对Ni反opal光子晶体的形貌和结构进行了观察分析,对其光学性能进行了初步研究.研究结果表明,对单晶硅片表面进行化学刻蚀有利于金属Ni的电化学沉积;在PS胶体晶体模板中电化学生长的金属Ni呈多晶状态,去除模板后形成了金属Ni的有序多孔结构.%Electrodeposition was used to fill the voids of PS colloidal crystals on silicon wafer with Ni and Ni inverse opal was obtained. The influence of chemical etching of silicon wafer on the electrodeposition of Ni was studied by using cyclic voltammetry scan. The resulted Ni inverse opal was characterized by scanning electron microscopy and X-ray diffraction. It showed that chemical etching of silicon surface is beneficial for the deposition of Ni on silicon wafer. Ni grown in the voids of PS colloidal crystals is the polycrystalline phase and the ordered porous structure of Ni is formed after the removing of the PS template.

  3. Performance of Honeywell silicon pressure transducers

    Digital Repository Service at National Institute of Oceanography (India)

    VijayKumar, K.; Joseph, A.; Desai, R.G.P.; Nagvekar, S.; Prabhudesai, S.; Damodaran, V.

    strain gauge, semiconductor strain gauge, and quartz crystal beam. In this paper we examine the laboratory performance of a few temperature-compensated Honeywell silicon strain gauge pressure transducers based on their static calibration. 2. Silicon... Thin-Diaphragm Strain Gauge Pressure Transducer Although semiconductor materials such as germanium and silicon exhibit substantial temperature-dependence, they possess pressure-sensitivities several times that of metallic strain gauges. Silicon...

  4. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  5. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  6. Development of an optical dilatometer using a cryogenic refrigerator (3). Measurements for a single crystal silicon; Kogata reitoki wo michiita reza kanshoshii bochoritsu sokutei sochi no kaihatsu (3). Tankesho shirikon no sokutei kekka

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, N.; Okaji, M. [National Research laboratory of Metrology, Tsukuba (Japan)

    1999-11-10

    We have developed laser-interferential coefficient of linear expansion measuring device in order to carry out the absolute measurement of coefficient of linear expansion of solid material at low temperature. Since the cooling system by liquid helium has been adopted, in this system, there was a restriction for streamlining of the data acquisition and handling simplification of the equipment. This time, the equipment was newly constructed using the cryostat with the refrigerating machine with the vibration control mechanism. By measuring low temperature thermal expansion rate of the single crystal silicon in the equipment, and comparing with the promotion value by CODATA, the soundness of the equipment was confirmed. (NEDO)

  7. Origins of non-stoichiometry in compounds: vacancy-ordering in ScS

    Science.gov (United States)

    Hart, Gus L. W.; Zunger, Alex

    2001-03-01

    While most stable compounds have fixed Daltonian ratios of their constituents (e.g., 1:1 ratio in ZnS, NaCl, GaAs), some materials exhibit significant nonstoichiometry even at low temperatures. Examples include some NaCl-structure transition-metal monochalcogenides such as HfS, ZrSe, and YS. The prototype system ScS exhibits this peculiar property of preferring the presence of vacancies (up to 30%) over a purely stoichiometric structure. Moreover, these vacancies order spatially in unusual structures. We consider Sc_1-xBox _xS as a binary alloy (where Box denotes a vacancy) and express the energy E_MBCE(σ) of any of the 2^N configurations σ in a ``mixed-basis cluster expansion'' (MBCE) obtained from ab initio calculations of ~ 30 ordered structures. A ground state search of all possible configurations reveals that indeed an ordered array of vacancies has the lowest energy. We show systematic features in the electronic structure that help explain the preference for vacancies.

  8. Inelastic deformation mechanisms in SCS-6/Ti 15-3 MMC lamina under compression

    Science.gov (United States)

    Newaz, Golam M.; Majumdar, Bhaskar S.

    1993-01-01

    An investigation was undertaken to study the inelastic deformation mechanisms in (0)(sub 8) and (90)(sub 8) Ti 15-3/SCS-6 lamina subjected to pure compression. Monotonic tests were conducted at room temperature (RT), 538 C and 650 C. Results indicate that mechanical response and deformation characteristics were different in monotonic tension and compression loading whereas some of those differences could be attributed to residual stress effects. There were other differences because of changes in damage and failure modes. The inelastic deformation in the (0)(sub 8) lamina under compression was controlled primarily by matrix plasticity, although some evidence of fiber-matrix debonding was observed. Failure of the specimen in compression was due to fiber buckling in a macroscopic shear zone (the failure plane). The inelastic deformation mechanisms under compression in (90)(sub 8) lamina were controlled by radial fiber fracture, matrix plasticity, and fiber-matrix debonding. The radial fiber fracture was a new damage mode observed for MMC's. Constitutive response was predicted for both the (0)(sub 8) and (90)(sub 8) laminae, using AGLPLY, METCAN, and Battelle's Unit Cell FEA model. Results from the analyses were encouraging.

  9. Runoff Potentiality of a Watershed through SCS and Functional Data Analysis Technique

    Directory of Open Access Journals (Sweden)

    M. I. Adham

    2014-01-01

    Full Text Available Runoff potentiality of a watershed was assessed based on identifying curve number (CN, soil conservation service (SCS, and functional data analysis (FDA techniques. Daily discrete rainfall data were collected from weather stations in the study area and analyzed through lowess method for smoothing curve. As runoff data represents a periodic pattern in each watershed, Fourier series was introduced to fit the smooth curve of eight watersheds. Seven terms of Fourier series were introduced for the watersheds 5 and 8, while 8 terms of Fourier series were used for the rest of the watersheds for the best fit of data. Bootstrapping smooth curve analysis reveals that watersheds 1, 2, 3, 6, 7, and 8 are with monthly mean runoffs of 29, 24, 22, 23, 26, and 27 mm, respectively, and these watersheds would likely contribute to surface runoff in the study area. The purpose of this study was to transform runoff data into a smooth curve for representing the surface runoff pattern and mean runoff of each watershed through statistical method. This study provides information of runoff potentiality of each watershed and also provides input data for hydrological modeling.

  10. Back contact to film silicon on metal for photovoltaic cells

    Science.gov (United States)

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  11. Charge exchange and energy loss of slowed down heavy ions channeled in silicon crystals; Echanges de charge et perte d'energie d'ions lourds ralentis, canalises dans des cristaux de silicium

    Energy Technology Data Exchange (ETDEWEB)

    Testa, E

    2005-10-15

    This work is devoted to the study of charge exchange processes and of the energy loss of highly charged heavy ions channeled in thin silicon crystals. The two first chapters present the techniques of heavy ion channeling in a crystal, the ion-electron processes and the principle of our simulations (charge exchange and trajectory of channeled ions). The next chapters describe the two experiments performed at the GSI facility in Darmstadt, the main results of which follow: the probability per target atom of the mechanical capture (MEC) of 20 MeV/u U{sup 91+} ions as a function of the impact parameter (with the help of our simulations), the observation of the strong polarization of the target electron gas by the study of the radiative capture and the slowing down of Pb{sup 81+} ions from 13 to 8,5 MeV/u in channeling conditions for which electron capture is strongly reduced. (author)

  12. Stabilization of elusive silicon oxides.

    Science.gov (United States)

    Wang, Yuzhong; Chen, Mingwei; Xie, Yaoming; Wei, Pingrong; Schaefer, Henry F; Schleyer, Paul von R; Robinson, Gregory H

    2015-06-01

    Molecular SiO2 and other simple silicon oxides have remained elusive despite the indispensable use of silicon dioxide materials in advanced electronic devices. Owing to the great reactivity of silicon-oxygen double bonds, as well as the low oxidation state of silicon atoms, the chemistry of simple silicon oxides is essentially unknown. We now report that the soluble disilicon compound, L:Si=Si:L (where L: = :C{N(2,6-(i)Pr2C6H3)CH}2), can be directly oxidized by N2O and O2 to give the carbene-stabilized Si2O3 and Si2O4 moieties, respectively. The nature of the silicon oxide units in these compounds is probed by spectroscopic methods, complementary computations and single-crystal X-ray diffraction.

  13. Synthesis of Trihydrocarbyltin Chloride Containing Silicon and Crystal Structure of (p-Cl-C6H4Me2SiCH2)3SnCl

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A series of trihydrocarbyltin chlorides containing silicon was synthesized. The acaricidal activity was determined and the structure-activity relationship was tried to be found out with the hydrophobic parameter.

  14. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  15. Genetic parameters for functional longevity, type traits, SCS, milk flow and production in the Italian Brown Swiss

    Directory of Open Access Journals (Sweden)

    Attilio Rossoni

    2010-04-01

    Full Text Available The aim of this study was to estimate genetic parameters for a set of new traits and to update values for production and morphological traits to be used in the selection index of Italian Brown Swiss dairy cattle. Longevity, milking speed and somatic cell scores (SCS were considered for inclusion in the selection index, and (covariances with all traits of the selection index were estimated. SCS was considered on a lactation basis while milk flow as the amount of milk (kg released per time unit (minute measured with a flowmeter. Cow functional longevity was the total herd life corrected for the production level. A total of 127,416 first lactation records of cows calving from 1985 to 2003 were considered. In order to maximize the number of records available for each combination of traits, 9 data sets were created. Estimates were obtained from multivariate linear sire models with equal design matrix in subsequent separated analysis. REML algorithms and canonical transformation were used to calculate (covariance estimates among all traits: functional longevity, milking speed, SCS, 5 production traits (milk, fat and protein yields, fat and protein percent, and 19 type traits. Heritabilities estimated were 0.14 ± 0.02 for SCS, 0.33 ± 0.07 for milk flow, and 0.04 ± 0.01 for functional longevity. Genetic correlation values between SCS and milk yield, fat percent and protein percent resulted of 0.18 ± 0.09, -0.19 ± 0.08, and -0.22 ± 0.08 respectively. Functional longevity had a strong positive genetic correlation with udder depth (0.42 ± 0.10 while a negative correlation with rear legs set (-0.56 ± 0.10. Milk flow was positively correlated with most of the production measures: 0.30 ± 0.18 with milk yield, 0.24 ± 0.17 with fat yields 0.16 ± 0.20 with protein yield. Additionally milk flow resulted largely genetically correlated with some type traits (0.53 ± 0.14 rear udder width, 0.40 ± 0.16 hock quality, 0.32 ± 0.15 rump angle, -0.25 ± 0

  16. The role of hSCs in promoting neural differentiation of hUC-MSCs in spinal cord injury

    Directory of Open Access Journals (Sweden)

    Wu QL

    2013-11-01

    Full Text Available Qiuli Wu,1,* You Chen,1,* Guangzhi Ning,1 Shiqing Feng,1 Junling Han,2 Qiang Wu,1 Yulin LI,1 Hong Wu,1 Hongyu Shi1 1Department of Orthopedics, Tianjin Medical University General Hospital, Tianjin, People's Republic of China; 2Tianjin Union Stem Cell and Gene Engineering Co., Ltd, Tianjin, People's Republic of China * These authors contributed equally to this paper Abstract: Cell therapy is a promising approach to treating spinal cord injury (SCI. Previous studies demonstrated that co-transplantation of human umbilical cord mesenchymal stem cells (hUC-MSCs and human Schwann cells (hSCs was an effective strategy by which to promote the regeneration of corticospinal fibers and locomotor recovery after SCI in rats. However, the neural differentiation potential of hUC-MSCs was not fully understood. In the present study, we examined the influence of hSCs on the survival and differentiation of hUC-MSCs in SCI rats. Four groups of rats were implanted with Dulbecco's Modified Eagle's Medium (DMEM, hSCs, hUC-MSCs, or a combination of hSCs and hUC-MSCs, respectively. Our results demonstrated that MAB1281 immunopositive cells appeared in the injured site of the transplanted cell groups, while myelin basic protein and high-molecular-weight neurofilament immunopositive cells were detected only in the co-transplantation group under the positive background of MAB1281. Furthermore, polymerase chain reaction (PCR and Western blot showed significantly higher expression of myelin basic protein and high-molecular-weight neurofilament and lower expression of glial fibrillary acidic protein in the co-transplantation group (P < 0.05, which correlated strongly with immunofluorescence findings. These results suggest that hSCs could induce hUC-MSC differentiation into neurons and oligodendrocytes and inhibit the formation of glial scarring after SCI. The neural differentiation of hUC-MSCs is likely induced by soluble factors provided by hSCs. Keywords: spinal cord injury

  17. Internal strain evolution during heating of Ti-6Al-4V/SCS-6 composite

    Energy Technology Data Exchange (ETDEWEB)

    Choo, H.; Rangaswamy, P.; Bourke, M.A.M.

    1999-12-31

    The characteristics of the residual stresses and their effects on the properties in continuous SiC fiber reinforced Ti-6Al-4V matrix composites (TMCs) have been extensively studied. However, to date, few experimental studies (e.g. Ti-14Al-21Nb/SCS-6) have characterized the thermal residual strain in TMCs at elevated temperatures. Therefore, the authors investigated the evolution of the thermal residual strain during heating of Ti-6Al-4V/35vol% SiC composite. In this study the authors used in situ high temperature neutron diffraction to measure strains: (1) in the matrix ({alpha} and {beta} phases) and in the fiber, (2) for several lattice reflections in each phase and (3) from both axial and the transverse directions. One distinguishing feature is the wide temperature range (from room temperature up to 1,170K) over which the study was performed. Although the proposed application temperature is typically less than 800K, TMCs are subject to higher temperatures during fabrication and may experience high temperature excursions while in service. Therefore, the authors extended the study to the high temperature regime where the matrix starts to undergo a phase transformation between {alpha}{minus} and {beta}{minus}Ti. Measurements from this regime (800{approximately}1,170K) provide insights on; (1) the inelastic relaxation of the residual strains through matrix yielding and creep, (2) the effect of the phase transformation on the residual strains and (3) the effect of the presence of SiC on the matrix phase evolution.

  18. Characterization Data Package for Containerized Sludge Samples Collected from Engineered Container SCS-CON-210

    Energy Technology Data Exchange (ETDEWEB)

    Fountain, Matthew S.; Fiskum, Sandra K.; Baldwin, David L.; Daniel, Richard C.; Bos, Stanley J.; Burns, Carolyn A.; Carlson, Clark D.; Coffey, Deborah S.; Delegard, Calvin H.; Edwards, Matthew K.; Greenwood, Lawrence R.; Neiner, Doinita; Oliver, Brian M.; Pool, Karl N.; Schmidt, Andrew J.; Shimskey, Rick W.; Sinkov, Sergey I.; Snow, Lanee A.; Soderquist, Chuck Z.; Thompson, Christopher J.; Trang-Le, Truc LT; Urie, Michael W.

    2013-09-10

    This data package contains the K Basin sludge characterization results obtained by Pacific Northwest National Laboratory during processing and analysis of four sludge core samples collected from Engineered Container SCS-CON-210 in 2010 as requested by CH2M Hill Plateau Remediation Company. Sample processing requirements, analytes of interest, detection limits, and quality control sample requirements are defined in the KBC-33786, Rev. 2. The core processing scope included reconstitution of a sludge core sample distributed among four to six 4-L polypropylene bottles into a single container. The reconstituted core sample was then mixed and subsampled to support a variety of characterization activities. Additional core sludge subsamples were combined to prepare a container composite. The container composite was fractionated by wet sieving through a 2,000 micron mesh and a 500-micron mesh sieve. Each sieve fraction was sampled to support a suite of analyses. The core composite analysis scope included density determination, radioisotope analysis, and metals analysis, including the Waste Isolation Pilot Plant Hazardous Waste Facility Permit metals (with the exception of mercury). The container composite analysis included most of the core composite analysis scope plus particle size distribution, particle density, rheology, and crystalline phase identification. A summary of the received samples, core sample reconstitution and subsampling activities, container composite preparation and subsampling activities, physical properties, and analytical results are presented. Supporting data and documentation are provided in the appendices. There were no cases of sample or data loss and all of the available samples and data are reported as required by the Quality Assurance Project Plan/Sampling and Analysis Plan.

  19. Interstitial-type defects in implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Berezhnov, N.I.; Stel' makh, V.F.; Chelyadinskij, A.R.

    1984-07-01

    Boron-, lithium-, phosphorus- and silicon-implanted silicon layers were investigated using X-ray diffraction method for measuring the crystal lattice parameters. It was established that stable interstitial complexes in concentrations comparable with concentrations of vacancy type defects occur in silicon as a result of ion implantation. The interstitial complexes are annealed at the following stages: 1 - 140, 2 - 500 deg C in the case of silicon irradiation by light ions and 1 - 180, 2 - 560 deg C in crystals irradiated by medium mass ions.

  20. 基于多尺度方法的单晶硅纳米切削%Study on nanometric cutting process of single crystal silicon based on multiscale method

    Institute of Scientific and Technical Information of China (English)

    朱朋哲; 房丰洲

    2012-01-01

    This paper features the development of Multiscale model of nanometric cutting of single crystal silicon by treating the critical region with MD(atomistic description) and capturing "far-field" elastic deformations using FE(continuum description).A HS region is used to couple the MD and FE regions.At the edge of HS region each description provides displacement boundary conditions for the other to realize the concurrent multiscale simulation.The investigation into Nanometric cutting process of single crystal silicon using the multiscale model shows that during nanometric cutting of single crystal silicon,the chip in front of the tool is formed by extrusion.Investigations of the distributions of atomic bond length,the variations of number of atoms with specified nearest number of neighbors,and the atomic configurations of MD region of the workpiece reveal that there occurs a phase transformation from four fold coordinated diamond cubic phase(α-Si) to the six fold coordinated β-Si during the nanometric cutting process,namely the conclusion that phase transformation is the dominant deformation mechanism of single crystal silicon during the nanometric cutting process.The study marked by the development of the multiscale model of nanometric cutting of single crystal silicon provides an effective tool for further exploring the microscale mechanisms of nanometic cutting.%通过在关键区域采用分子动力学(原子)描述、在远场弹性变形区域采用有限元(连续介质力学)描述建立了单晶硅纳米切削的多尺度模型。在边界区域,分子动力学和有限元互为彼此提供边界条件从而实现分子动力学区域和有限元区域的耦合。利用多尺度模型研究了单晶硅的纳米切削过程,结果表明纳米切削中工件以推挤的方式在刀具前方形成切屑。纳米切削中工件的原子键长分布、不同配位数的原子数变化和工件MD区域的原子构型的研究