Optical anisotropy in vertically coupled quantum dots
DEFF Research Database (Denmark)
Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan
1999-01-01
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....
Quantum Dots Coupled to a Superconductor
DEFF Research Database (Denmark)
Jellinggaard, Anders Robert
are tuned electrostatically. This includes tuning the odd occupation of the dot through a quantum phase transition, where it forms a singlet with excitations in the superconductor. We detail the fabrication of these bottom gated devices, which additionally feature ancillary sensor dots connected......In this thesis, sub-gap states in bottom-gated InAs N–dot–S, N–double dot–S, and N–dot–S–dot–N devices are investigated, and several different theories are developed to model these states. Experimental results include tracking single levels of the dot in an N–dot–S device as the tunnel couplings...... with floating gates. A numerical technique is developed, which predicts the position of Yu-Shiba-Rusinov sub-gap states in the proximitized Anderson model as well as properties of these states. This theory is valid for all occupations of the dot and for weak to intermediate coupling. We compare...
Quantum Computation Using Optically Coupled Quantum Dot Arrays
Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)
1998-01-01
A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.
Near-field strong coupling of single quantum dots.
Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert
2018-03-01
Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.
Correlated Coulomb drag in capacitively coupled quantum-dot structures
DEFF Research Database (Denmark)
Kaasbjerg, Kristen; Jauho, Antti-Pekka
2016-01-01
We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs) -- a biasdriven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach which accounts for higher-order tunneling (cotunneling...
Vertical quantum dot with a vertically coupled charge detector
International Nuclear Information System (INIS)
Zaitsu, Koichiro; Kitamura, Yosuke; Ono, Keiji; Tarucha, Seigo
2008-01-01
We fabricated a vertical quantum dot equipped with a charge detector. The dot current flows vertically between the top and bottom contacts. The charge detector is formed at the bottom contact layer with a current channel constricted to the region just under the dot. This channel current is reduced by addition of an extra electron onto the dot due to the electrostatic coupling to the dot. The charge state of the vertical dot was detected, starting from zero electrons. The sensitivity of the charge detector was comparable to that previously reported for lateral dots with nearby quantum point contacts
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
Electron Transport in Coupled Quantum Dots
National Research Council Canada - National Science Library
Antoniadis, D
1998-01-01
In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...
Correlation effects in side-coupled quantum dots
International Nuclear Information System (INIS)
Zitko, R; Bonca, J
2007-01-01
Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures
Electronic transport through a quantum dot chain with strong dot-lead coupling
International Nuclear Information System (INIS)
Liu, Yu; Zheng, Yisong; Gong, Weijiang; Gao, Wenzhu; Lue, Tianquan
2007-01-01
By means of the non-equilibrium Green function technique, the electronic transport through an N-quantum-dot chain is theoretically studied. By calculating the linear conductance spectrum and the local density of states in quantum dots, we find the resonant peaks in the spectra coincides with the eigen-energies of the N-quantum-dot chain when the dot-lead coupling is relatively weak. With the increase of the dot-lead coupling, such a correspondence becomes inaccurate. When the dot-lead coupling exceeds twice the interdot coupling, such a mapping collapses completely. The linear conductance turn to reflect the eigen-energies of the (N-2)- or (N-1)-quantum dot chain instead. The two peripheral quantum dots do not manifest themselves in the linear conductance spectrum. More interestingly, with the further increase of the dot-lead coupling, the system behaves just like an (N-2)- or (N-1)-quantum dot chain in weak dot-lead coupling limit, since the resonant peaks becomes narrower with the increase of dot-lead coupling
Atomically precise, coupled quantum dots fabricated by cleaved edge overgrowth
Wegscheider, W.; Schedelbeck, G.; Bichler, M.; Abstreiter, G.
Recent progress in the fabrication of quantum dots by molecular beam epitaxy along three directions in space is reviewed. The optical properties of different sample structures consisting of individual quantum dots, pairs of coupled dots as well as of linear arrays of dots are studied by microscopic photoluminescence spectroscopy. The high degree of control over shape, composition and position of the 7×7×7 nm3 size GaAs quantum dots, which form at the intesection of three orthogonal quantum wells, allows a detailed investigation of the influence of coupling between almost identical zero-dimensional objects. In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold cleaved edge overgrowth structure, the photoluminescence spetrum of an individual quantum dot exhibits a single sharp line (full width at half maximum denomination "artificial atoms" for the quantum dots. It is further demonstrated that an "artifical molecule", characterized by the existence of bonding and antibonding states can be assembled from two of such "artificial atoms". The coupling strength between the "artificial atoms" is adjusted by the "interatomic" distance and is reflected in the energetic separation of the bonding and antibonding levels and the linewidths of the corresponding interband transitions.
Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
International Nuclear Information System (INIS)
Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu
2009-01-01
The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design
Collective Rabi dynamics of electromagnetically coupled quantum-dot ensembles
Glosser, Connor; Shanker, B.; Piermarocchi, Carlo
2017-09-01
Rabi oscillations typify the inherent nonlinearity of optical excitations in quantum dots. Using an integral kernel formulation to solve the three-dimensional Maxwell-Bloch equations in ensembles of up to 104 quantum dots, we observe features in Rabi oscillations due to the interplay of nonlinearity, nonequilibrium excitation, and electromagnetic coupling between the dots. This approach allows us to observe the dynamics of each dot in the ensemble without resorting to spatial averages. Our simulations predict synchronized multiplets of dots that exchange energy, dots that dynamically couple to screen the effect of incident external radiation, localization of the polarization due to randomness and interactions, as well as wavelength-scale regions of enhanced and suppressed polarization.
Interaction of solitons with a string of coupled quantum dots
Energy Technology Data Exchange (ETDEWEB)
Kumar, Vijendra, E-mail: vsmedphysics@gmail.com; Swami, O. P., E-mail: omg1789@gmail.com; Nagar, A. K., E-mail: ajaya.nagar@gmail.com [Department of Physics, Govt. Dungar College, Bikaner, Rajasthan 334001 (India); Taneja, S., E-mail: sachintaneja9@gmail.com [Department of Radiotherapy, CHAF Bangalore, Karnataka 560007 (India)
2016-05-06
In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.
Tartakovskii, Alexander
2012-07-01
Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by
Broadband room temperature strong coupling between quantum dots and metamaterials.
Indukuri, Chaitanya; Yadav, Ravindra Kumar; Basu, J K
2017-08-17
Herein, we report the first demonstration of room temperature enhanced light-matter coupling in the visible regime for metamaterials using cooperative coupled quasi two dimensional quantum dot assemblies located at precise distances from the hyperbolic metamaterial (HMM) templates. The non-monotonic variation of the magnitude of strong coupling, manifested in terms of strong splitting of the photoluminescence of quantum dots, can be explained in terms of enhanced LDOS near the surface of such metamaterials as well as the plasmon mediated super-radiance of closely spaced quantum dots (QDs). Our methodology of enhancing broadband, room temperature, light-matter coupling in the visible regime for metamaterials opens up new possibilities of utilising these materials for a wide range of applications including QD based thresholdless nanolasers and novel metamaterial based integrated photonic devices.
Site-controlled quantum dots coupled to photonic crystal waveguides
DEFF Research Database (Denmark)
Rigal, B.; de Lasson, Jakob Rosenkrantz; Jarlov, C.
2016-01-01
We demonstrate selective optical coupling of multiple, site controlled semiconductor quantum dots (QDs) to photonic crystal waveguide structures. The impact of the exact position and emission spectrum of the QDs on the coupling efficiency is elucidated. The influence of optical disorder and end...
Charge pumping in strongly coupled molecular quantum dots
Haughian, Patrick; Yap, Han Hoe; Gong, Jiangbin; Schmidt, Thomas L.
2017-11-01
The interaction between electrons and the vibrational degrees of freedom of a molecular quantum dot can lead to an exponential suppression of the conductance, an effect which is commonly termed Franck-Condon blockade. Here, we investigate this effect in a quantum dot driven by time-periodic gate voltages and tunneling amplitudes using nonequilibrium Green's functions and a Floquet expansion. Building on previous results showing that driving can lift the Franck-Condon blockade, we investigate driving protocols which can be used to pump charge across the quantum dot. In particular, we show that due to the strongly coupled nature of the system, the pump current at resonance is an exponential function of the drive strength.
Transport properties of a Kondo dot with a larger side-coupled noninteracting quantum dot
International Nuclear Information System (INIS)
Liu, Y S; Fan, X H; Xia, Y J; Yang, X F
2008-01-01
We investigate theoretically linear and nonlinear quantum transport through a smaller quantum dot in a Kondo regime connected to two leads in the presence of a larger side-coupled noninteracting quantum dot, without tunneling coupling to the leads. To do this we employ the slave boson mean field theory with the help of the Keldysh Green's function at zero temperature. The numerical results show that the Kondo conductance peak may develop multiple resonance peaks and multiple zero points in the conductance spectrum owing to constructive and destructive quantum interference effects when the energy levels of the large side-coupled noninteracting dot are located in the vicinity of the Fermi level in the leads. As the coupling strength between two quantum dots increases, the tunneling current through the quantum device as a function of gate voltage applied across the two leads is suppressed. The spin-dependent transport properties of two parallel coupled quantum dots connected to two ferromagnetic leads are also investigated. The numerical results show that, for the parallel configuration, the spin current or linear spin differential conductance are enhanced when the polarization strength in the two leads is increased
A theoretical study of exciton energy levels in laterally coupled quantum dots
International Nuclear Information System (INIS)
Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E
2009-01-01
A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.
Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot
International Nuclear Information System (INIS)
Jiang Zhaotan; Yang Yannan; Qin Zhijie
2010-01-01
Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in the side-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.
Pumped double quantum dot with spin-orbit coupling
Directory of Open Access Journals (Sweden)
Sherman Eugene
2011-01-01
Full Text Available Abstract We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin- dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures. PACS numbers: 73.63.Kv,72.25.Dc,72.25.Pn
DEFF Research Database (Denmark)
Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian
2008-01-01
We present time-resolved spontaneous emission measurements of single quantum dots embedded in photonic crystal waveguides. Quantum dots that couple to a photonic crystal waveguide are found to decay up to 27 times faster than uncoupled quantum dots. From these measurements -factors of up to 0.89 ...... taking into account that the light-matter coupling is strongly enhanced due to the significant slow-down of light in the photonic crystal waveguides....
Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids
Zhitomirsky, David
2013-06-25
Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.
Efficient fiber-coupled single-photon sources based on quantum dots
DEFF Research Database (Denmark)
Daveau, Raphaël Sura
This thesis presents the study of solid-state quantum emitters in two dierent forms. The rst part of the thesis deals with quantum dot based single-photon sources with an emphasis on ecient photon extraction into an optical ber. The second part of the thesis covers a theoretical study of optical...... refrigeration with coupled quantum wells. Many photonic quantum information processing applications would benet from a highbrightness, ber-coupled source of triggered single photons. This thesis presents a study of such sources based on quantum dots coupled to unidirectional photonic-crystal waveguide devices...... the characterization of single quantum dots. The second method, evanescent coupling from a tapered waveguide to a microber, demonstrates a chip-to-ber coupling eciency exceeding 80 % in passive re- ection measurements. The characterization of quantum dots from this device establishes a ber-coupled source eciency of 15...
Spin-Orbit Coupling, Antilocalization, and Parallel Magnetic Fields in Quantum Dots
DEFF Research Database (Denmark)
Zumbuhl, D.; Miller, Jessica; M. Marcus, C.
2002-01-01
We investigate antilocalization due to spin-orbit coupling in ballistic GaAs quantum dots. Antilocalization that is prominent in large dots is suppressed in small dots, as anticipated theoretically. Parallel magnetic fields suppress both antilocalization and also, at larger fields, weak...... localization, consistent with random matrix theory results once orbital coupling of the parallel field is included. In situ control of spin-orbit coupling in dots is demonstrated as a gate-controlled crossover from weak localization to antilocalization....
Autonomous quantum Maxwell's demon based on two exchange-coupled quantum dots
Ptaszyński, Krzysztof
2018-01-01
I study an autonomous quantum Maxwell's demon based on two exchange-coupled quantum dots attached to the spin-polarized leads. The principle of operation of the demon is based on the coherent oscillations between the spin states of the system which act as a quantum iSWAP gate. Due to the operation of the iSWAP gate, one of the dots acts as a feedback controller which blocks the transport with the bias in the other dot, thus inducing the electron pumping against the bias; this leads to the locally negative entropy production. Operation of the demon is associated with the information transfer between the dots, which is studied quantitatively by mapping the analyzed setup onto the thermodynamically equivalent auxiliary system. The calculated entropy production in a single subsystem and information flow between the subsystems are shown to obey a local form of the second law of thermodynamics, similar to the one previously derived for classical bipartite systems.
Wu, Nan; Zhang, Cong; Jin, Xing Ri; Zhang, Ying Qiao; Lee, YoungPak
2018-02-19
Unidirectional reflectionless phenomena are investigated theoretically in a non-Hermitian quantum system composed of several quantum dots and a plasmonic waveguide. By adjusting the phase shifts between quantum dots, single- and dual-band unidirectional reflectionlessnesses are realized at exceptional points based on two and three quantum dots coupled to a plasmonic waveguide, respectively. In addition, single- and dual-band unidirectional perfect absorptions with high quality factors are obtained at the vicinity of exceptional points.
Engineering drag currents in Coulomb coupled quantum dots
Lim, Jong Soo; Sánchez, David; López, Rosa
2018-02-01
The Coulomb drag phenomenon in a Coulomb-coupled double quantum dot system is revisited with a simple model that highlights the importance of simultaneous tunneling of electrons. Previously, cotunneling effects on the drag current in mesoscopic setups have been reported both theoretically and experimentally. However, in both cases the sequential tunneling contribution to the drag current was always present unless the drag level position were too far away from resonance. Here, we consider the case of very large Coulomb interaction between the dots, whereby the drag current needs to be assisted by cotunneling events. As a consequence, a quantum coherent drag effect takes place. Further, we demonstrate that by properly engineering the tunneling probabilities using band tailoring it is possible to control the sign of the drag and drive currents, allowing them to flow in parallel or antiparallel directions. We also show that the drag current can be manipulated by varying the drag gate potential and is thus governed by electron- or hole-like transport.
Photon-assisted tunneling in an asymmetrically coupled triple quantum dot
Energy Technology Data Exchange (ETDEWEB)
Wang, Bao-Chuan; Cao, Gang, E-mail: gcao@ustc.edu.cn; Chen, Bao-Bao; Yu, Guo-Dong; Li, Hai-Ou; Xiao, Ming; Guo, Guo-Ping, E-mail: gpguo@ustc.edu.cn [Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2016-08-14
The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-central dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.
Photon-assisted tunneling in an asymmetrically coupled triple quantum dot
International Nuclear Information System (INIS)
Wang, Bao-Chuan; Cao, Gang; Chen, Bao-Bao; Yu, Guo-Dong; Li, Hai-Ou; Xiao, Ming; Guo, Guo-Ping
2016-01-01
The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-central dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.
Single-electron switching effect in graphene parallel-coupled double quantum dots
Arai, M.; Masubuchi, S.; Machida, T.
2011-12-01
We have fabricated parallel-coupled quantum dots on single-layer graphene. The tunnel coupling between the quantum dots can be tuned by a graphene in-plane gate. Owing to the tunnel coupling, the Coulomb blockade oscillation peaks exhibit periodic shifts as the number of electron in the non-conducting side-coupled QD is changed. The result suggests the observation of the single electron switching effect, which is a prerequisite for a single photon detection scheme using parallel-coupled quantum dots.
International Nuclear Information System (INIS)
Kouwenhoven, L.; Marcus, C.
1998-01-01
Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)
DEFF Research Database (Denmark)
Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren
2011-01-01
We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement of the spontan...
Thermoelectrics in Coulomb-coupled quantum dots: Cotunneling and energy-dependent lead couplings
DEFF Research Database (Denmark)
Walldorf, Nicklas; Jauho, Antti-Pekka; Kaasbjerg, Kristen
2017-01-01
We study thermoelectric effects in Coulomb-coupled quantum-dot (CCQD) systems beyond lowest-order tunneling processes and the often applied wide-band approximation. To this end, we present a master-equation (ME) approach based on a perturbative T -matrix calculation of the charge and heat tunneling...
Few electron quantum dot coupling to donor implanted electron spins
Rudolph, Martin; Harvey-Collard, Patrick; Neilson, Erik; Gamble, John; Muller, Richard; Jacobson, Toby; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm
2015-03-01
Donor-based Si qubits are receiving increased interest because of recent demonstrations of high fidelity electron or nuclear spin qubits and their coupling. Quantum dot (QD) mediated interactions between donors are of interest for future coupling of two donors. We present experiment and modeling of a polysilicon/Si MOS QD, charge-sensed by a neighboring many electron QD, capable of coupling to one or two donor implanted electron spins (D) while tuned to the few electron regime. The unique design employs two neighboring gated wire FETs and self-aligned implants, which supports many configurations of implanted donors. We can access the (0,1) ⇔(1,0) transition between the D and QD, as well as the resonance condition between the few electron QD and two donors ((0,N,1) ⇔(0,N +1,0) ⇔(1,N,0)). We characterize capacitances and tunnel rate behavior combined with semi-classical and full configuration interaction simulations to study the energy landscape and kinetics of D-QD transitions. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
Exchange cotunneling through quantum dots with spin-orbit coupling
DEFF Research Database (Denmark)
Paaske, Jens; Andersen, Andreas; Flensberg, Karsten
2010-01-01
We investigate the effects of spin-orbit interaction (SOI) on the exchange cotunneling through a spinful Coulomb blockaded quantum dot. In the case of zero magnetic field, Kondo effect is shown to take place via a Kramers doublet and the SOI will merely affect the Kondo temperature. In contrast, we...
Reducing dephasing in coupled quantum dot-cavity systems by engineering the carrier wavefunctions
DEFF Research Database (Denmark)
Nysteen, Anders; Nielsen, Per Kær; Mørk, Jesper
2012-01-01
We demonstrate theoretically how photon-assisted dephasing by the electron-phonon interaction in a coupled cavity-quantum dot system can be significantly reduced for specific QD-cavity detunings. Our starting point is a recently published theory,1 which considers longitudinal acoustic phonons......, described by a non-Markovian model, interacting with a coupled quantum dot-cavity system. The reduction of phonon-induced dephasing is obtained by placing the cavity-quantum dot system inside an infinite slab, assuming spherical electronic wavefunctions. Based on our calculations, we expect this to have...
Energy Technology Data Exchange (ETDEWEB)
Brogi, Bharat Bhushan, E-mail: brogi-221179@yahoo.in; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla-171005 (India); Chand, Shyam [University Institute of Information Technology, H.P. University Shimla-171005 (India)
2015-06-24
Theoretical study of the Coulomb blockade effect on transport properties (Transmission Probability and I-V characteristics) for varied configuration of coupled quantum dot system has been studied by using Non Equilibrium Green Function(NEGF) formalism and Equation of Motion(EOM) method in the presence of magnetic flux. The self consistent approach and intra-dot Coulomb interaction is being taken into account. As the key parameters of the coupled quantum dot system such as dot-lead coupling, inter-dot tunneling and magnetic flux threading through the system can be tuned, the effect of asymmetry parameter and magnetic flux on this tuning is being explored in Coulomb blockade regime. The presence of the Coulomb blockade due to on-dot Coulomb interaction decreases the width of transmission peak at energy level ε + U and by adjusting the magnetic flux the swapping effect in the Fano peaks in asymmetric and symmetric parallel configuration sustains despite strong Coulomb blockade effect.
Renaud, N.; Grozema, F.C.
2014-01-01
We report numerical simulations of biexciton generation in coupled quantum dots (CQDs) placed in a static electric field and excited by a chirped laser pulse. Our simulations explicitly account for exciton-phonon interactions at finite temperature using a non-Markovian quantum jump approach to solve
Spin-state transfer in laterally coupled quantum-dot chains with disorders
International Nuclear Information System (INIS)
Yang Song; Bayat, Abolfazl; Bose, Sougato
2010-01-01
Quantum dot arrays are a promising medium for transferring quantum information between two distant points without resorting to mobile qubits. Here we study the two most common disorders, namely hyperfine interaction and exchange coupling fluctuations, in quantum dot arrays and their effects on quantum communication through these chains. Our results show that the hyperfine interaction is more destructive than the exchange coupling fluctuations. The average optimal time for communication is not affected by any disorder in the system and our simulations show that antiferromagnetic chains are much more resistive than the ferromagnetic ones against both kind of disorders. Even when time modulation of a coupling and optimal control is employed to improve the transmission, the antiferromagnetic chain performs much better. We have assumed the quasistatic approximation for hyperfine interaction and time-dependent fluctuations in the exchange couplings. Particularly for studying exchange coupling fluctuations we have considered the static disorder, white noise, and 1/f noise.
Wang, Jianhao; Li, Jingyan; Teng, Yiwan; Bi, Yanhua; Hu, Wei; Li, Jinchen; Wang, Cheli; Qiu, Lin; Jiang, Pengju
2016-04-01
We present a molecular characterization of metal-affinity driven self-assembly between CdSe-ZnS quantum dots and a series of hexahistidine peptides with different charges. In particular, we uti- lized fluorescence coupled capillary electrophoresis to test the self-assembly process of quantum dots with peptides in solution. Four peptides with different charges can be efficiently separated by fluorescence coupled capillary electrophoresis. The migration time appeared to be influenced by the charges of the peptide. In addition, the kinetics of self-assembly process of quantum dots with one of the peptides manifested a bi-phasic kinetics followed by a saturating stage. This work revealed that there exist two types of binding sites on the surface of quantum dots for peptide 1: one type termed "high priority" binding site and a "low priority" site which is occupied after the first binding sites are fully occupied. The total self-assembly process finishes in solution within 80 s. Our work represents the systematic investigation of the details of self-assembly kinetics utilizing high-resolution fluorescence coupled capillary electrophoresis. The charge effect of peptide coating quantum dots provides a new way of preparing bioprobes.
Transient current in a quantum dot subject to a change in coupling to its leads
International Nuclear Information System (INIS)
Izmaylov, A F; Goker, A; Friedman, B A; Nordlander, P
2006-01-01
The time-dependent non-crossing approximation is used to calculate the transient currents through a quantum dot in the Kondo regime subject to a sudden change in its coupling to the leads. The currents are found to display transient non-universal behaviour immediately after the perturbation and then to follow a slow universal increase toward equilibrium. The timescales for the approach to equilibrium are shown to be the same as those recently identified in a study of transient currents in a quantum dot subject to a sudden change in the energy of the dot level (Plihal et al 2005 Phys. Rev. B 71 165321). We present improved numerical algorithms which enable relatively fast calculation of the transient response of quantum dots to sudden perturbations
Entanglement and bistability in coupled quantum dots inside a driven cavity
International Nuclear Information System (INIS)
Mitra, Arnab; Vyas, Reeta
2010-01-01
Generation and dissipation of entanglement between two coupled quantum dots (QDs) in a cavity driven by a coherent field is studied. We find that it is possible to generate and sustain a large amount of entanglement between the quantum dots in the steady state, even in the presence of strong decay in both the cavity and the dots. We investigate the effect of different parameters (decay rates, coupling strengths, and detunings) on entanglement. We find that the cavity field shows bistability and study the effect of relevant parameters on the existence of this bistable behavior. We also study the correlation between the cavity field and the entanglement between the dots. The experimental viability of the proposed scheme is discussed.
First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots
Ganguli, N.; Acharya, S.; Dasgupta, I.
2014-01-01
We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied
Kondo effect in quantum dots coupled to ferromagnetic leads with noncollinear magnetizations
International Nuclear Information System (INIS)
Swirkowicz, R.; Rudzinski, W.; Wilczynski, M.; Wawrzyniak, M.; Barnas, J.
2006-01-01
Non-equilibrium Green's function technique has been used to calculate spin-dependent electronic transport through a quantum dot in the Kondo regime. The dot is described by the Anderson Hamiltonian and is coupled symmetrically to two ferromagnetic leads, whose magnetic moments are noncollinear. It is shown that the splitting of the zero bias Kondo anomaly in differential conductance decreases monotonously with increasing angle between magnetizations, and vanishes in the limit of antiparallel configuration
International Nuclear Information System (INIS)
Miguel-Sánchez, Javier; Reinhard, Andreas; Togan, Emre; Volz, Thomas; Imamoglu, Atac; Besga, Benjamin; Reichel, Jakob; Estève, Jérôme
2013-01-01
We demonstrate non-perturbative coupling between a single self-assembled InGaAs quantum dot and an external fiber-mirror-based microcavity. Our results extend the previous realizations of tunable microcavities while ensuring spatial and spectral overlap between the cavity mode and the emitter by simultaneously allowing for deterministic charge control of the quantum dots. Using resonant spectroscopy, we show that the coupled quantum dot cavity system is at the onset of strong coupling, with a cooperativity parameter of C ≈ 2.0 ± 1.3. Our results constitute a milestone in the progress toward the realization of a high-efficiency solid-state spin–photon interface. (paper)
Shot noise in a quantum dot system coupled with Majorana bound states
Chen, Qiao; Chen, Ke-Qiu; Zhao, Hong-Kang
2014-08-01
We investigate the spectral density of shot noise and current for the system of a quantum dot coupled to Majorana bound states (MBS) employing the nonequilibrium Green’s function. The Majorana bound states at the end of the wire strongly affect the shot noise. There are two types of coupling in the system: dot-MBS and MBS-MBS coupling. The curves of shot noise and current versus coupling strength have novel steps owing to the energy-level splitting caused by dot-MBS coupling. The magnitude of these steps increases with the strength of dot-MBS coupling λ but decreases with the strength of MBS-MBS coupling. The steps shift toward the large ∣eV∣ region as λ or ɛM increases. In addition, dot-MBS coupling enhances the shot noise while MBS-MBS coupling suppresses the shot noise. In the absence of MBS-MBS coupling, a sharp jump emerges in the curve of the Fano factor at zero bias owing to the differential conductance being reduced by a factor of 1/2. This provides a novel technique for the detection of Majorana fermions.
Excitons and trions in single and vertically coupled quantum dots under an electric field
Zhai, Li-Xue; Wang, Yan; An, Zhong
2017-08-01
We present a theoretical study of the exciton (X0), the positive and negative trions (X+ and X-) in single and vertically coupled configurations of self-assembled InGaAs quantum dots under an electric field. The quantum states of X0, X+ and X- have been investigated using a quasi-one-dimensional (Q1D) model within the effective-mass approximation. For the single quantum dots, the electric-field dependent energy levels and the average inter-particle distances for the exciton and trions have been calculated. For the coupled quantum dots, the ground and the excited states for X0, X+ and X- have also been calculated and discussed. It is found that either the hole or the electron can be tuned into resonance states by the electric field and that the transition energy spectra for both trions consequently show crossing and anticrossing patterns. The recombination probabilities of the exciton and trion optical transitions are also calculated. The theoretical results have been compared with previously reported photoluminescence data and qualitative agreement is obtained. The trion conditional wave functions are also plotted under different electric field intensities, and it is found that a molecular orbital can be formed at a critical electric field intensity. The evolution of the energy levels of the trions in coupled quantum dots can be explained by the interplay of particle transfer and the electric field.
International Nuclear Information System (INIS)
Weymann, I.; Barnas, J.
2006-01-01
By means of the second-order perturbation theory, we analyze theoretically spin-dependent electronic transport through a singly occupied quantum dot in the cotunneling regime. The system is described by the impurity Anderson Hamiltonian with arbitrary Coulomb correlation parameter U. The dot is coupled to two ferromagnetic leads whose magnetic moments are noncollinear. It is also assumed that the dot level is intrinsically spin-split due to an effective molecular field. It is shown that the tunnel magnetoresistance strongly depends on the angle between the leads' magnetizations
Proposed Coupling of an Electron Spin in a Semiconductor Quantum Dot to a Nanosize Optical Cavity
DEFF Research Database (Denmark)
Majumdar, Arka; Nielsen, Per Kær; Bajcsy, Michal
2013-01-01
We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable in...
International Nuclear Information System (INIS)
Xiong Yong-Chen; Yang Jun-Tao; Huang Hai-Ming; Wang Wei-Zhong
2015-01-01
The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method. We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t. For small t, three dots form a local spin doublet. As t increases, due to the competition between V and t, there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet. When t is absent, the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage. While for sufficient t, the antiferromagnetic spin correlation between dots is enhanced, and the conductance is strongly suppressed for the bonding state is almost doubly occupied. (paper)
Extraction of the beta-factor for single quantum dots coupled to a photonic crystal waveguide
DEFF Research Database (Denmark)
Nielsen, Henri Thyrrestrup; Sapienza, Luca; Lodahl, Peter
2010-01-01
We present measurements of the β-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The β-factor is evaluated by means of time resolved frequency-dependent photoluminescence spectroscopy. The emission...... wavelength of single quantum dots is temperature tuned across the band edge of a photonic crystal waveguide and the spontaneous emission rate is recorded. Decay rates up to 5.7 ns−1, corresponding to a Purcell factor of 5.2, are measured and β-factors up to 85% are extracted. These results prove...
Microwave Detection of Electron-Phonon Interactions in a Cavity-Coupled Double Quantum Dot
Hartke, T. R.; Liu, Y.-Y.; Gullans, M. J.; Petta, J. R.
2018-03-01
Quantum confinement leads to the formation of discrete electronic states in quantum dots. Here we probe electron-phonon interactions in a suspended InAs nanowire double quantum dot (DQD) that is electric-dipole coupled to a microwave cavity. We apply a finite bias across the wire to drive a steady state population in the DQD excited state, enabling a direct measurement of the electron-phonon coupling strength at the DQD transition energy. The amplitude and phase response of the cavity field exhibit oscillations that are periodic in the DQD energy level detuning due to the phonon modes of the nanowire. The observed cavity phase shift is consistent with theory that predicts a renormalization of the cavity center frequency by coupling to phonons.
Energy Technology Data Exchange (ETDEWEB)
Ujevic, Sebastian [Universidade Federal Fluminense (EEIMVR/UFF), Volta Redonda, RJ (Brazil). Escola de Engenharia Industrial e Metalurgica de Volta Redonda; Mendoza, Michel [Universidade Federal do ABC (UFABC), Santo Andre, SP (Brazil). Centro de Ciencias Naturais e Humanas
2011-07-01
Full text. We propose numerical simulations of longitudinal magneto conductance through a finite anti dot lattice located inside an open quantum dot with a magnetic field applied perpendicular to the plane. The system is connected to reservoirs using quantum point contacts. We discuss the relationship between the longitudinal magneto conductance and the generation of transversal couplings between the induced open quantum dots in the system. The system presents longitudinal magneto conductance maps with crossovers (between transversal bands) and closings (longitudinal decoupling) of fundamental quantum states related to the open quantum dots induced by the anti dot lattice. A relationship is observed between the distribution of anti dots and the formed conductance bands, allowing a systematic follow-up of the bands as a function of the applied magnetic field and quantum point contact width. We observed a high conductance intensity (between n- and (n + 1)-quantum of conductance, n = 1; 2...) in the regions of crossover and closing of states. This suggests transversal couplings between the induced open quantum dots of the system that can be modulated by varying both the anti dots potential and the quantum point contact width. A new continuous channel (not expected) is induced by the variation of the contact width and generate Fano resonances in the conductance. These resonances can be manipulated by the applied magnetic field
Full counting statistics in a serially coupled double quantum dot system with spin-orbit coupling
Wang, Qiang; Xue, Hai-Bin; Xie, Hai-Qing
2018-04-01
We study the full counting statistics of electron transport through a serially coupled double quantum dot (QD) system with spin-orbit coupling (SOC) weakly coupled to two electrodes. We demonstrate that the spin polarizations of the source and drain electrodes determine whether the shot noise maintains super-Poissonian distribution, and whether the sign transitions of the skewness from positive to negative values and of the kurtosis from negative to positive values take place. In particular, the interplay between the spin polarizations of the source and drain electrodes and the magnitude of the external magnetic field, can give rise to a gate-voltage-tunable strong negative differential conductance (NDC) and the shot noise in this NDC region is significantly enhanced. Importantly, for a given SOC parameter, the obvious variation of the high-order current cumulants as a function of the energy-level detuning in a certain range, especially the dip position of the Fano factor of the skewness can be used to qualitatively extract the information about the magnitude of the SOC.
Electrical and optical control of entanglement entropy in a coupled triple quantum dot system
Mehmannavaz, Mohammad Reza
2015-10-01
We investigated theoretically the entanglement creation through tunneling rate and fields in a four-level triple quantum dot molecule based on InAs/GaAs/AlGaAs heterostructure in both steady state and transient state. We demonstrate that the entanglement entropy among the QDM and its spontaneous emission fields can be controlled by coherent and incoherent pumping field and tunnel-coupled electronics levels. The results may provide some new possibilities for technological applications in solid-state quantum information science, quantum computing, teleportation, encryption, compression codec, and optoelectronics.
Zhang, Ya-Jing; Zhang, Lian-Lian; Jiang, Cui; Gong, Wei-Jiang
2018-02-01
We theoretically investigate the electronic transport through a parallel-coupled multi-quantum-dot system, in which the terminal dots of a one-dimensional quantum-dot chain are embodied in the two arms of an Aharonov-Bohm interferometer. It is found that in the structures of odd(even) dots, all their even(odd) molecular states have opportunities to decouple from the leads, and in this process antiresonance occurs which are accordant with the odd(even)-numbered eigenenergies of the sub-molecule without terminal dots. Next when Majorana zero modes are introduced to couple laterally to the terminal dots, the antiresonance and decoupling phenomena still co-exist in the quantum transport process. Such a result can be helpful in understanding the special influence of Majorana zero mode on the electronic transport through quantum-dot systems.
DEFF Research Database (Denmark)
Leosson, Kristjan
Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
Time-dependent resonant tunnelling for parallel-coupled double quantum dots
International Nuclear Information System (INIS)
Dong Bing; Djuric, Ivana; Cui, H L; Lei, X L
2004-01-01
We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green function in the sequential tunnelling regime. Based on these equations, we investigate time-dependent resonant tunnelling under a small amplitude irradiation and find that the resonant photon-assisted tunnelling peaks in photocurrent demonstrate a combination behaviour of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by threading the magnetic flux inside this device
Fluctuation theorem for a double quantum dot coupled to a point-contact electrometer
Energy Technology Data Exchange (ETDEWEB)
Golubev, D. [Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe (Germany); Utsumi, Y. [Department of Physics Engineering, Faculty of Engineering, Mie University, Tsu, Mie, 514-8507 (Japan); Marthaler, M. [Institut für Theoretische Festkörperphysik, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany); Schön, G. [Institut für Theoretische Festkörperphysik, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany and Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe (Germany)
2013-12-04
Motivated by recent experiments on the real-time single-electron counting through a semiconductor GaAs double quantum dot (DQD) by a nearby quantum point contact (QPC), we develop the full-counting statistics of coupled DQD and QPC system. By utilizing the time-scale separation between the dynamics of DQD and QPC, we derive the modified master equation with tunneling rates depending on the counting fields, which fulfill the detailed fluctuation theorem. Furthermore, we derive universal relations between the non-linear corrections to the current and noise, which can be verified in experiments.
Energy Technology Data Exchange (ETDEWEB)
Weymann, Ireneusz, E-mail: weymann@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University, 61-614 Poznań (Poland)
2015-05-07
We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition from the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.
Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots
DEFF Research Database (Denmark)
Grove-Rasmussen, Kasper; Grap, S.; Paaske, Jens
2012-01-01
By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level...... renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization....
UV Nano Lights - Nonlinear Quantum Dot-Plasmon Coupling
2016-06-20
compact optical devices with new functionalities and coupling electronic transitions directly to strongly localised optical modes is highly desirable...in the form of the localised surface plasmon resonance of the gold component of nanoparticle hybrids could enhance nonlinear emission by several...intense electric fields generated by the localised surface plasmon absorption at the Au nanoparticle interface. it was found that a significant improvement
Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system
Energy Technology Data Exchange (ETDEWEB)
Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)
2016-04-11
We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.
Magnetic-field-dependent optical properties and interdot correlations in coupled quantum dots
International Nuclear Information System (INIS)
Bellucci, Devis; Troiani, Filippo; Goldoni, Guido; Molinari, Elisa
2005-01-01
We theoretically investigate the properties of neutral and charged excitons in vertically coupled quantum dots, as a function of the in-plane magnetic field. The single-particle states are computed by numerically solving the 3D effective-mass equation, while the neutral- and charged-exciton states are obtained by means of a configuration interaction approach. We show that the field determines an enhancement of the interdot correlations, resulting in unexpected carrier localization. The field effect on the excitonic binding energies is also discussed, and is shown to strongly depend on the charging
Energy Technology Data Exchange (ETDEWEB)
Martínez-Orozco, J.C. [Unidad Académica de Física. Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060. Zacatecas, Zac. (Mexico); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)
2014-11-01
The conduction band states of GaAs-based vertically coupled double triangular quantum dots in two dimensions are investigated within the effective mass and parabolic approximation, using a diagonalization procedure to solve the corresponding Schrödinger-like equation. The effect of an externally applied static electric field is included in the calculation, and the variation of the lowest confined energy levels as a result of the change of the field strength is reported for different geometrical setups. The linear and nonlinear optical absorptions and the relative change of the refractive index, associated with the energy transition between the ground and the first excited state in the system, are studied as a function of the incident light frequency for distinct configurations of inter-dot distance and electric field intensities. The blueshift of the resonant absorption peaks is detected as a consequence of the increment in the field intensity, whereas the opposite effect is obtained from the increase of inter-dot vertical distance. It is also shown that for large enough values of the electric field there is a quenching of the optical absorption due to field-induced change of symmetry of the first excited state wavefunction, in the case of triangular dots of equal shape and size.
To investigate the coupled effects of solution chemistry and vadose zone processes on the mobility of quantum dot (QD) nanoparticles, laboratory scale transport experiments were performed. The complex coupled effects of ionic strength, size of QD aggregates, surface tension, contact angle, infiltrat...
Zhou, Ning; Yuan, Meng; Gao, Yuhan; Li, Dongsheng; Yang, Deren
2016-04-26
Strong coupling between semiconductor excitons and localized surface plasmons (LSPs) giving rise to hybridized plexciton states in which energy is coherently and reversibly exchanged between the components is vital, especially in the area of quantum information processing from fundamental and practical points of view. Here, in photoluminescence spectra, rather than from common extinction or reflection measurements, we report on the direct observation of Rabi splitting of approximately 160 meV as an indication of strong coupling between excited states of CdSe/ZnS quantum dots (QDs) and LSP modes of silver nanoshells under nonresonant nanosecond pulsed laser excitation at room temperature. The strong coupling manifests itself as an anticrossing-like behavior of the two newly formed polaritons when tuning the silver nanoshell plasmon energies across the exciton line of the QDs. Further analysis substantiates the essentiality of high pump energy and collective strong coupling of many QDs with the radiative dipole mode of the metallic nanoparticles for the realization of strong coupling. Our finding opens up interesting directions for the investigation of strong coupling between LSPs and excitons from the perspective of radiative recombination under easily accessible experimental conditions.
Fano–Kondo Effect in a Triple Quantum Dots Coupled to Ferromagnetic Leads
International Nuclear Information System (INIS)
Ai-Hua, Bi; Shao-Quan, Wu; Tao, Hou; Wei-Li, Sun
2008-01-01
Using the Keldysh nonequilibrium Green function and equation-of-motion technique, we have qualitatively studied the spin-dependent transport of a triple-QD system in the Kondo regime. It is shown that the Kondo resonance and Fano interference coexist, and in this system the Fano–Kondo effect shows dip behaviours richer than that in the T-shaped QDs. The interdot coupling, the energy level of the side coupled QDs and the spin polarization strength greatly influence the DOS of the central quantum dot QD 0 . Either the increase of the coupling strength between the two QDs or that of the energy levels of the side coupled QDs enhances the Kondo resonance. Especially, the Kondo resonance is strengthened greatly when the side dot energy is fixed at the Fermi energy. Meanwhile, the Kondo resonance splits for the spin-up and spin-down configurations due to the polarization: the down-spin resonance is enhanced, and the up-spin resonance is suppressed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Xue, Hai-Bin; Liu, Xu-Ping; Chen, Bin
2018-01-01
The finite-frequency shot noise of electron transport through a serially coupled double quantum dot system with Rashba spin-orbit coupling is studied based on an effective particle-number-resolved quantum master equation. We demonstrate that the finite-frequency shot noise displays an obvious dip, and the dip position, which is independent of the spin polarizations of the source and drain electrodes, is determined by the energy difference between the coherent singly-occupied eigenstates of the quantum dot system. These results suggest that the dip position of the finite-frequency shot noise can be used to quantitatively extract the information about the energy difference between the coherent singly-occupied eigenstates and the magnitude of Rashba spin-orbit coupling. The predicted properties of the finite-frequency shot noise are of particular interest for understanding of the internal dynamics of the coupled quantum dot systems.
Energy Technology Data Exchange (ETDEWEB)
Horta-Piñeres, Sindi, E-mail: sdhorta@yahoo.es [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Santa Marta (Colombia); Universidad de Sucre, Sincelejo (Colombia); Elizabeth Escorcia-Salas, G., E-mail: elizabethescorcia@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Santa Marta (Colombia); Mikhailov, I.D., E-mail: mikhail2811@gmail.com [Universidad Industrial de Santander, Apartado Aereo 678, Bucaramanga (Colombia); Sierra-Ortega, J., E-mail: jsierraortega@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Santa Marta (Colombia)
2014-11-15
The energy spectrum of a positively charged exciton confined in vertically coupled type II quantum dots with different morphologies in the presence of the external magnetic field is studied. The effect of the quantum dot morphology on the curves of the lowest energy levels as functions of the magnetic field is analyzed. It is shown that a strong correlation presented in this system generates the Aharonov–Bohm oscillations of the lower energy levels similar to those in wide quantum ring. The novel curves of the trion energies dependences on the external magnetic field for the disk-like, lens-like, and cone-like structures are presented.
Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities
National Research Council Canada - National Science Library
Raymer, Michael
2003-01-01
An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...
The shot noise of a strongly correlated quantum dot coupled to the Luttinger liquid leads
International Nuclear Information System (INIS)
Yang, Kai-Hua; He, Xian; Wang, Huai-Yu; Liu, Kai-Di; Liu, Bei-Yun
2014-01-01
We study the shot noise of a strongly correlated quantum dot weakly coupled to Luttinger liquid leads in the Kondo regime by means of the extended equation of motion method. A general zero-frequency shot noise formula with good convergence is derived. The shot noise exhibits a non-monotonic dependence on voltage for weak intralead interaction. There is a peak around the Kondo temperature at low voltage when the interaction is very weak, and its height decreases rapidly with the intralead interaction increasing. When the interaction is moderately strong the peak disappears and the shot noise scales as a power law in bias voltage, indicating that the intralead electron interaction suppresses the shot noise. It is possible that the measurements of the shot noise spectrum can extract the information of the intralead interaction. - Highlights: • The shot noise of a dot coupled to Luttinger liquid leads in the Kondo regime. • A shot noise formula is derived. • Intralead interaction suppresses the shot noise. • The noise shows different voltage-dependence for different intralead interaction
Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well
Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy
2018-03-01
We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.
Energy Technology Data Exchange (ETDEWEB)
Ganguly, Jayanta [Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731 215, West Bengal (India); Ghosh, Manas, E-mail: pcmg77@rediffmail.com [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)
2015-02-02
Highlights: • Linear and nonlinear polarizabilities of quantum dot are studied. • Quantum dot is doped with a repulsive impurity. • Doped system is subject to Gaussian white noise. • Dopant migrates under damped condition. • Noise-damping coupling affects polarizabilities. - Abstract: We investigate the profiles of diagonal components of static and frequency-dependent linear, first, and second nonlinear polarizabilities of repulsive impurity doped quantum dot. We have considered propagation of dopant within an environment that damps the motion. Simultaneous presence of noise inherent to the system has also been considered. The dopant has a Gaussian potential and noise considered is a Gaussian white noise. The doped system is exposed to an external electric field which could be static or time-dependent. Noise undergoes direct coupling with damping and the noise-damping coupling strength appears to be a crucial parameter that designs the profiles of polarizability components. This happens because the coupling strength modulates the dispersive and asymmetric character of the system. The frequency of external field brings about additional features in the profiles of polarizability components. The present investigation highlights some useful features in the optical properties of doped quantum dots.
Nilsson, Malin; Namazi, Luna; Lehmann, Sebastian; Leijnse, Martin; Dick, Kimberly A.; Thelander, Claes
2016-01-01
We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel q...
International Nuclear Information System (INIS)
Luo Jian; Lu Di; Du Chaoling; Liu Youwen; Shi Daning; Lai Wei; Guo Chunlei; Gong Shangqing
2012-01-01
We theoretically investigate how to control the Rabi oscillation of excitons of the coupling quantum dots by manipulating static electric fields. Our results show that, for a single-photon process, when direct excitons change into indirect excitons with a bias applied on the sample, the Rabi oscillation rarely alters. However, for the two-photon process, a pronounced enhancement of Rabi oscillation is observed, which can be utilized as the logic gate in quantum information. (paper)
International Nuclear Information System (INIS)
Shao-Quan, Wu; Tao, Hou; Guo-Ping, Zhao; Wan-Lun, Yu
2010-01-01
Using the Keldysh nonequilibrium Green function and equation-of-motion technique, this paper studies the magnetotransport through an Aharonov–Bohm (AB) ring with parallel double quantum dots coupled to ferromagnetic leads. It calculates the transmission probability in both the equilibrium and the nonequilibrium case, analyses the conductance and the tunnel magnetoresistance for various parameters, and obtains some new results. These results show that this system is provided with an excellent spin filtering property, and that a large tunnelling magnetoresistance and a negative tunnelling magnetoresistance can arise by adjusting relative parameters; these facts indicate that this system is a possible candidate for spin valve transistors, and has important applications in spintronics. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Directory of Open Access Journals (Sweden)
Lin Qiu
2014-01-01
Full Text Available In this report, fluorescence detection coupled capillary electrophoresis (CE-FL was used to detect Protein A. Antibody was first labeled with Cy5 and then mixed with quantum dots (QDs to form QDs-antibody bioprobe. Further, we observed fluorescence resonance energy transfer (FRET from QDs donor to Cy5 acceptor. The bioprobe was formed and brought QDs and Cy5 close enough to allow FRET to occur. After adding protein A, the FRET system was broken and caused the FRET signal to decrease. Thus, a new method for the determination of protein A was proposed based on the FRET signal changes. This study provides a new trail of thought for the detection of protein.
Yuan, X W; Shi, L; Wang, Qi; Chen, C Q; Liu, X H; Sun, L X; Zhang, Bo; Zi, J; Lu, Wei
2014-09-22
The spontaneous emission of colloidal CdSe/ZnS quantum dots (CQDs) modified by the hybrid plasmonic-photonic crystal is reported in this paper. By using a spin coater, the spatial overlap between CQDs and the surface resonance modes in this quasi-2D crystal slab is achieved. In this case, the coupling efficiency of them is enhanced greatly and most excited CQDs radiate through the surface modes. Consequently, despite the low refractive index contrast of our hybrid structure, the directionality of spontaneous emission, increased radiative probability and narrowed full width at half maximum of emission peak are all clearly observed by our home-made microscopic angle-resolved spectroscopy and time-resolved photoluminescence system. Our results manifest that the quasi-2D hybrid plasmonic-photonic crystal is an ideal candidate to tailor the radiative properties of CdSe/ZnS CQDs, which might be significant for the applications of light emitting devices.
Position dependent optical coupling between single quantum dots and photonic crystal nanocavities
Energy Technology Data Exchange (ETDEWEB)
Kuruma, K.; Takamiya, D. [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ota, Y.; Kakuda, M. [Institute of Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Iwamoto, S.; Arakawa, Y. [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
2016-08-15
We demonstrate precise and quick detection of the positions of quantum dots (QDs) embedded in two-dimensional photonic crystal nanocavities. We apply this technique to investigate the QD position dependence of the optical coupling between the QD and the nanocavity. We use a scanning electron microscope (SEM) operating at a low acceleration voltage to detect surface bumps induced by the QDs buried underneath. This enables QD detection with a sub-10 nm precision. We then experimentally measure the vacuum Rabi spectra to extract the optical coupling strengths (gs) between single QDs and cavities, and compare them to the values estimated by a combination of the SEM-measured QD positions and electromagnetic cavity field simulations. We found a highly linear relationship between the local cavity field intensities and the QD-cavity gs, suggesting the validity of the point dipole approximation used in the estimation of the gs. The estimation using SEM has a small standard deviation of ±6.2%, which potentially enables the high accuracy prediction of g prior to optical measurements. Our technique will play a key role for deeply understanding the interaction between QDs and photonic nanostructures and for advancing QD-based cavity quantum electrodynamics.
Chiral Molecule-Enhanced Extinction Ratios of Quantum Dots Coupled to Random Plasmonic Structures.
Bezen, Lior; Yochelis, Shira; Jayarathna, Dilhara; Bhunia, Dinesh; Achim, Catalina; Paltiel, Yossi
2018-03-06
Devices based on self-assembled hybrid colloidal quantum dots (CQDs) coupled with specific organic linker molecules are a promising way to simply realize room-temperature, spectrally tunable light detectors. Nevertheless, this type of devices usually has low quantum efficiency. Plasmonics has been shown as an efficient tool in guiding and confining light at nanoscale dimensions. As plasmonic modes exhibit highly confined fields, they locally increase light-matter interactions and consequently enhance the performance of CQD-based photodetectors. Recent publications presented experimental results of large extinction enhancement from a monolayer of CQDs coupled to random gold nanoislands using a monolayer of organic alkyl linkers. We report here that a twofold larger extinction enhancement in the visible spectrum is observed when a monolayer of helical chiral molecules connects the CQDs to the gold structure instead of a monolayer of achiral linkers. We also show that this effect provides insight into the chirality of the molecules within the monolayer. In future work, we plan to evaluate the potential of these results to be used in the construction of a more efficient and sensitive photon detector based on surface QDs, as well as to supply a simple way to map the chirality of a single chiral monolayer.
Energy Technology Data Exchange (ETDEWEB)
Vukmirovic, Nenad; Wang, Lin-Wang
2009-11-10
This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.
Ultrasmall silicon quantum dots
Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.
2009-01-01
We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and
McDaniel, Hunter
2017-10-17
Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.
International Nuclear Information System (INIS)
Zhang Zhiyong; Xiong Shijie
2005-01-01
We investigate the influence of an external voltage V 0 on conductance G through a quantum dot (QD), which is side-coupled to a quantum wire of length L W , whose two ends are weakly connected to leads. In our calculation, the poor man's scaling law and slave-boson mean-field method are employed. With V 0 increased, a series of resonant regions is formed and G exhibits different properties in and out of these regions, which is the universal result of the finite-size effect on the Kondo correlation. In symmetric structures, the would-be resonant regions corresponding to odd wavefunctions are removed. If the symmetry is broken by changing the QD position, those regions will be recovered. In two asymmetric structures with their wire lengths being L W and L W +1, respectively, the two sets of resonant regions intersect with each other. These symmetry-related phenomena characterize side-coupled QD structures. With the barrier width increased, the number of resonant regions is increased, too
International Nuclear Information System (INIS)
Deus, Fernanda; Continetino, Mucio
2011-01-01
Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot
From quantum dots to quantum circuits
International Nuclear Information System (INIS)
Ensslin, K.
2008-01-01
Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse
Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.
Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu
2013-02-01
Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.
Wei, Hai-Rui; Deng, Fu-Guo
2014-12-18
Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.
A fiber-coupled quantum-dot on a photonic tip
DEFF Research Database (Denmark)
Cadeddu, Davide; Teissier, Jean; Braakman, Floris R.
2016-01-01
We present the experimental realization of a quantum fiber-pigtail. The device consists of a semiconductor quantum-dot embedded into a conical photonic wire that is directly connected to the core of a fiber-pigtail. We demonstrate a photon collection efficiency at the output of the fiber of 5.8% .......8% and suggest realistic improvements for the implementation of a useful device in the context of quantum information. We also discuss potential applications in scanning probe microscopy. The approach is generic and transferable to other materials including diamond and silicon....
Two-axis control of a coupled quantum dot - donor qubit in Si-MOS
Rudolph, Martin; Harvey-Collard, Patrick; Jacobson, Tobias; Wendt, Joel; Pluym, Tammy; Dominguez, Jason; Ten-Eyck, Greg; Lilly, Mike; Carroll, Malcolm
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
Wu, Jiang
2014-01-01
This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.
Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel
2014-01-01
This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of
Lei, Yonggang
2017-05-23
It have been recognized that the coupling of graphene quantum dots (GQDs) with semiconductor photocatalysts endow the resulting nanocomposites with enhanced photocatalytic performances, however, the essential roles of GQDs have not been clearly revealed yet. Herein, we report that a high efficiency of the photocatalytic H2 evolution was achieved using strongly coupled nanohybrids of CdS with GQDs (CdS/GQDs) as visible-light-driven photocatalysts. CdS/GQDs nanohybrids were synthesized by a facile hydrothermal method in which the crystallization of CdS precursor and coupling of GQDs could be accomplished in one-step. GQDs are firmly decorated on the surface of CdS nanoparticles, forming “dot-on-particle” heterodimer structures. GQDs have no significant influence on the crystallite structure of CdS but render the nanohybrids with strong light absorption at the wavelength beyond the band edge of CdS. Under visible light irradiation (≥420nm), CdS/GQDs nanohybrids reach the highest H2 production rate of 95.4μmol·h−1, about 2.7 times higher than that of pure CdS nanoparticles, at GQDs content of 1.0wt %, and the apparent quantum efficiency (AQE) was determined to be 4.2% at 420nm. Incident light-wavelength dependent experiments reveal that the light absorption of CdS dominated the performance of nanohybrids, and the excess light absorption coming from GQDs hardly contributes to the observed higher activity. Photocurrent response, steady-state and time-resolved PL, and EIS measurements suggest that the high activity of CdS/GQDs is attributed predominantly to the graphene-like nature of GQDs, which can act as an efficient electron acceptor to induce an efficient charge separation. This work clearly reveals that GQDs mainly played a role of electron acceptor instead of a photosensitizer in enhancing the photocatalytic H2 evolution performances of CdS/GQDs nanohybrids, which offers a new insight to understand the essential roles of GQDs in semiconductor
Solid-state cavity quantum electrodynamics using quantum dots
International Nuclear Information System (INIS)
Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.
2001-01-01
We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)
Muñoz-Rosas, Ana Luz; Rodríguez-Gómez, Arturo; Alonso-Huitrón, Juan Carlos
2018-03-22
Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.
Directory of Open Access Journals (Sweden)
Ana Luz Muñoz-Rosas
2018-03-01
Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.
Crépieux, A.; Sahoo, S.; Duong, T. Q.; Zamoum, R.; Lavagna, M.
2018-03-01
A theory is developed for the emission noise at frequency ν in a quantum dot in the presence of Coulomb interactions and asymmetric couplings to the reservoirs. We give an analytical expression for the noise in terms of the various transmission amplitudes. Including the inelastic scattering contribution, it can be seen as the analog of the Meir-Wingreen formula for the current. A physical interpretation is given on the basis of the transmission of one electron-hole pair to the concerned reservoir where it emits an energy after recombination. We then treat the interactions by solving the self-consistent equations of motion for the Green functions. The results for the noise derivative versus e V show a zero value until e V =h ν , followed by a Kondo peak in the Kondo regime, in good agreement with recent measurements in carbon nanotube quantum dots.
Coulomb coupling and the role of symmetries in quantum-dot arrays for cellular automata
International Nuclear Information System (INIS)
Ramirez, F.; Cota, E.; Ulloa, S. E.
2000-01-01
Using a group-theoretical analysis of the symmetries of a quantum dot array, we investigate the role of defects on the energetics of the system and the resulting charge configurations (or polarization of the cell). We find that for the typical four- or five-element geometries proposed, even small asymmetries introduced by defects in the system, or variations in the local electrostatic environment, can give rise to large effects on the polarization of the ground state and the corresponding low-energy excitations. These shifts are likely to produce important effects in the operation of the cellular automata proposed using these quantum dots. In particular, we find that the sensitivity to polarization changes induced by a driver cell decreases dramatically, and the polarization values are no longer fully defined. These effects would both force the use of stronger driving fields, and may also complicate the dynamical behavior of the cellular automata. (c) 2000 The American Physical Society
Voltage-Controlled Negative Index in Vertically Coupled Quantum Dot Systems
Wang, Huan; Zhu, Ka-Di
2008-01-01
We demonstrate that voltage-controlled negative index can be obtained in self-organized InAs quantum dot systems. As the bias voltage changes, the refractive index can be adjusted and controlled continuously from -7 to 7. Simultaneously, the absorption of light in the system will be very small. The single-negative index materials and the double-negative index materials can be achieved in different bias voltages.
Quantum-dot based photonic quantum networks
Lodahl, Peter
2018-01-01
Quantum dots (QDs) embedded in photonic nanostructures have in recent years proven to be a very powerful solid-state platform for quantum optics experiments. The combination of near-unity radiative coupling of a single QD to a photonic mode and the ability to eliminate decoherence processes imply that an unprecedent light-matter interface can be obtained. As a result, high-cooperativity photon-emitter quantum interfaces can be constructed opening a path-way to deterministic photonic quantum gates for quantum-information processing applications. In the present manuscript, I review current state-of-the-art on QD devices and their applications for quantum technology. The overarching long-term goal of the research field is to construct photonic quantum networks where remote entanglement can be distributed over long distances by photons.
Behzadi, Naghi; Ahansaz, Bahram; Shojaei, Saeid
2013-01-01
New scheme for generating genuine three-partite entanglement among three quantum dots (QDs) is proposed. The QDs are trapped in an one-dimensional (1D) array of three equidistance single-mode coupled cavities. Photon hopping is considered to be responsible for coupling between the cavities. The effective dynamics of the system leads to generate genuine three-partite entangled coherent excitonic states in QDs. The entanglement of these states, after encoding as three-qubit system, can be detected by entanglement witnesses (EWs) based on GHZ-states. It is shown that the generated entangled states can be arbitrarily very close to the GHZ-states.
Wu, Jiang
2013-01-01
The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou
Quantum optics with single quantum dot devices
International Nuclear Information System (INIS)
Zwiller, Valery; Aichele, Thomas; Benson, Oliver
2004-01-01
A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Wing, Waylin J.; Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu; Gutha, Rithvik R.; Campbell, Quinn [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)
2015-09-28
We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.
Spin Switching via Quantum Dot Spin Valves
Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.
2018-01-01
We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.
Pierre, M.; Roche, B.; Wacquez, R.; Jehl, X.; Sanquer, M.; Vinet, M.
2011-04-01
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate metal-oxide-semiconductor field-effect transistors. The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realization of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realization of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances toward the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.
Transient current in a quantum dot asymmetrically coupled to metallic leads
International Nuclear Information System (INIS)
Goker, A; Friedman, B A; Nordlander, P
2007-01-01
The time-dependent non-crossing approximation is used to study the transient current in a single-electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric coupling, sharp features in the density of states of the leads can induce oscillations in the current through the dot. These oscillations persist to much longer timescales than the timescale for charge fluctuations. The amplitude of the oscillations increases as the temperature or source-drain bias across the dot is reduced and saturates for values below the Kondo temperature. We discuss the microscopic origin of these oscillations and comment on the possibility for their experimental detection
Quantum Dot Spectrometer (GSFC IRAD)
National Aeronautics and Space Administration — We are developing an ultra-compact, low mass, low-cost, yet high resolution, multispectral imager based on an innovative quantum dot array concept. The quantum dot...
Nilsson, Malin; Namazi, Luna; Lehmann, Sebastian; Leijnse, Martin; Dick, Kimberly A.; Thelander, Claes
2016-09-01
We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II broken gap of InAs-GaSb heterojunctions. The Coulomb blockade in the electron and hole transport is studied, and periodic interactions of electrons and holes are observed and can be reproduced by modeling. Distorted Coulomb diamonds indicate voltage-induced ground-state transitions, possibly a result of changes in the spatial distribution of holes in the thin GaSb shell.
Lateral spin-orbit coupling and the Kondo effect in quantum dots
Vernek, Edson; Ngo, Anh; Ulloa, Sergio
2010-03-01
We present studies of the Coulomb blockade and Kondo regimes of transport of a quantum dot connected to current leads through spin-polarizing quantum point contacts (QPCs) [1]. This configuration, arising from the effect of lateral spin-orbit fields, results in spin-polarized currents even in the absence of external magnetic fields and greatly affects the correlations in the dot. Using an equation-of-motion technique and numerical renormalization group calculations we obtain the conductance and spin polarization for this system under different parameter regimes. Our results show that both the Coulomb blockade and Kondo regimes exhibit non-zero spin-polarized conductance. We analyze the role that the spin-dependent tunneling amplitudes of the QPC play in determining the charge and net magnetic moment in the dot. We find that the Kondo regime exhibits a strongly dependent Kondo temperature on the QPC polarizability. These effects, controllable by lateral gate voltages, may provide a new approach for exploring Kondo correlations, as well as possible spin devices. Supported by NSF DMR-MWN and PIRE. [1] P. Debray et al., Nature Nanotech. 4, 759 (2009).
Kim, Yeongho; Cho, Il-Wook; Ryu, Mee-Yi; Kim, Jun Oh; Lee, Sang Jun; Ban, Keun-Yong; Honsberg, Christiana B.
2017-08-01
The optical properties of the Stranski-Krastanov (S-K) grown InAs/GaAsSb quantum dots (QDs) coupled to sub-monolayer (SML) InAs QD stacks are investigated using photoluminescence (PL) spectroscopy. The PL emission peak of the S-K QDs shifts to shorter wavelengths with increasing the number of SML stacks (NSML) due to the increasing strain fields from the SML QDs. The PL peak energy is linearly increased with increasing the cube root of excitation power, with a different ratio of the absorption coefficient to radiative recombination rate for all the QD samples. The total carrier lifetime for the S-K QDs is increased with increasing NSML, most probably caused by the increase in the ground-state transition energy of the S-K QDs. The nonmonotonic behavior of the thermal activation energy of electrons in the S-K QDs is observed due to the NSML-dependent variation of the strain and Coulombic interaction within the QDs.
Directory of Open Access Journals (Sweden)
A. Stockklauser
2017-03-01
Full Text Available The strong coupling limit of cavity quantum electrodynamics (QED implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238 MHz at a resonator linewidth κ/2π=12 MHz and a DQD charge qubit decoherence rate of γ_{2}/2π=40 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.
He, Yong
2017-06-23
We utilize the surface plasmon field of a metal nanoparticle (MNP) to show strain-mediated coupling in a quantum dot-mechanical resonator hybrid system including a quantum dot (QD) embedded within a conical nanowire (NW) and a MNP in the presence of an external field. Based on the numerical solutions of the master equation, we find that a slow oscillation, originating from the strain-mediated coupling between the QD and the NW, appears in the time evolution of the plasmon field enhancement. The results show that the period (about [Formula: see text]) of the slow oscillation is equal to that of the mechanical resonator of NW, which suggests that the time-resolved measurement of the plasmon field enhancement can be easily achieved based on the current experimental conditions. Its amplitude increases with the increasing strain-mediated coupling strength, and under certain conditions there is a linear relationship between them. The slow oscillation of the plasmon field enhancement provides valuable tools for measurements of the mechanical frequency and the strain-mediated coupling strength.
He, Yong
2017-06-01
We utilize the surface plasmon field of a metal nanoparticle (MNP) to show strain-mediated coupling in a quantum dot-mechanical resonator hybrid system including a quantum dot (QD) embedded within a conical nanowire (NW) and a MNP in the presence of an external field. Based on the numerical solutions of the master equation, we find that a slow oscillation, originating from the strain-mediated coupling between the QD and the NW, appears in the time evolution of the plasmon field enhancement. The results show that the period (about 2 μ s) of the slow oscillation is equal to that of the mechanical resonator of NW, which suggests that the time-resolved measurement of the plasmon field enhancement can be easily achieved based on the current experimental conditions. Its amplitude increases with the increasing strain-mediated coupling strength, and under certain conditions there is a linear relationship between them. The slow oscillation of the plasmon field enhancement provides valuable tools for measurements of the mechanical frequency and the strain-mediated coupling strength.
Hexagonal graphene quantum dots
Ghosh, Sumit
2016-12-05
We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.
Universal quantum computing with nanowire double quantum dots
International Nuclear Information System (INIS)
Xue Peng
2011-01-01
We present a method for implementing universal quantum computing using a singlet and triplets of nanowire double quantum dots coupled to a one-dimensional transmission line resonator. This method is suitable and of interest for both quantum computing and quantum control with inhibition of spontaneous emission, enhanced spin qubit lifetime, strong coupling and quantum nondemolition measurements of spin qubits. We analyze the performance and stability of all the required operations and emphasize that all techniques are feasible with current experimental technology.
DEFF Research Database (Denmark)
Van Vlack, C.; Kristensen, Philip Trøst; Hughes, S.
2012-01-01
the dot to the detector, we demonstrate that the strong-coupling regime should be observable in the far-field spontaneous emission spectrum, even at room temperature. The vacuum-induced emission spectra show that the usual vacuum Rabi doublet becomes a rich spectral triplet or quartet with two of the four...
Two-electron double quantum dot coupled to coherent photon and phonon fields
Sato, Yuya; Chen, Jason C. H.; Hashisaka, Masayuki; Muraki, Koji; Fujisawa, Toshimasa
2017-09-01
Two-electron states of a double quantum dot (DQD) under irradiation of coherent boson (photon and phonon) fields are studied by measuring spin-flip tunneling current in the Pauli spin blockade regime. This measurement scheme allows us to investigate Rabi splitting and associated boson dressed states particularly in the deep dispersive regime where the detuning δ ≡ℏ ω -EAB between the boson energy ℏ ω and energy spacing EAB of the two-level system is significantly large (δ ˜ℏ ω ), where the permanent dipole moment in the DQD plays a significant role in the hybridization.
House, M. G.; Kobayashi, T.; Weber, B.; Hile, S. J.; Watson, T. F.; van der Heijden, J.; Rogge, S.; Simmons, M. Y.
2015-01-01
Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon. PMID:26548556
Magnon-driven quantum dot refrigerators
International Nuclear Information System (INIS)
Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan
2015-01-01
Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.
Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.
2017-09-01
In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.
Hydrostatic stress dependence of the exciton-phonon coupled states in cylindrical quantum dots
International Nuclear Information System (INIS)
El Moussaouy, A.; Bria, D.; Nougaoui, A.
2005-01-01
We investigate theoretically the effects of compressive stress on the binding energy of an exciton in a cylindrical quantum dot (QD) using a variational procedure within the effective mass approximation. The stress was applied in the z direction and the interaction between the charge carriers (electron and hole) and confined longitudinal optical (LO) phonon modes was taken into account. Specific applications of these results are given for GaAs QDs embedded in a Ga 1-x Al x As semiconductor. The result shows that the binding energy and the polaronic correction increases linearly with increasing stress. Moreover, we obtain the binding energy and the polaronic contribution in the limit in which the QD turns into a quantum well
Klimov, Victor I
2010-01-01
""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do
Sapmaz, S.
2006-01-01
Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small
Effects of the Spin Heat Accumulation on the Heat Generation in a Quantum Dot Coupled to Leads
Liu, Jia; Zhou, Yun; Chi, Feng; Ma, Yong-Hong
2018-01-01
Heat generation by a spin-polarized current in a single-level quantum dot (QD) subjected to spin heat accumulation (SHA), which denotes the spin-dependent electron temperature, is studied by using the nonequilibrium Green's function technique. The heat generation originates from the energy exchange between the conduction electrons and the phonon reservoir coupled to the QD. Due to the SHA, the spin-up and spin-down heat generations are opposite in sign, and each has a maximum when the QD level is aligned to the chemical potentials of the leads, where the electric current is zero. Under a magnetic field, the maxima of the spin-up and spin-down heat generations are shifted to different dot level regimes. Now total negative heat generation emerges, indicating that the electron absorbs heat from the phonon reservoir to the dot. By tuning the dot levels and the system temperature, the magnitude of the negative heat generation can be enhanced accompanied by weakened electric current, an ideal condition for the realization of nanorefrigerator.
Cartar, William K.
Photonic crystal microcavity quantum dot lasers show promise as high quality-factor, low threshold lasers, that can be integrated on-chip, with tunable room temperature opera- tions. However, such semiconductor microcavity lasers are notoriously difficult to model in a self-consistent way and are primarily modelled by simplified rate equation approxima- tions, typically fit to experimental data, which limits investigations of their optimization and fundamental light-matter interaction processes. Moreover, simple cavity mode optical theory and rate equations have recently been shown to fail in explaining lasing threshold trends in triangular lattice photonic crystal cavities as a function of cavity size, and the potential impact of fabrication disorder is not well understood. In this thesis, we develop a simple but powerful numerical scheme for modelling the quantum dot active layer used for lasing in these photonic crystal cavity structures, as an ensemble of randomly posi- tioned artificial two-level atoms. Each two-level atom is defined by optical Bloch equations solved by a quantum master equation that includes phenomenological pure dephasing and an incoherent pump rate that effectively models a multi-level gain system. Light-matter in- teractions of both passive and lasing structures are analyzed using simulation defined tools and post-simulation Green function techniques. We implement an active layer ensemble of up to 24,000 statistically unique quantum dots in photonic crystal cavity simulations, using a self-consistent finite-difference time-domain method. This method has the distinct advantage of capturing effects such as dipole-dipole coupling and radiative decay, without the need for any phenomenological terms, since the time-domain solution self-consistently captures these effects. Our analysis demonstrates a powerful ability to connect with recent experimental trends, while remaining completely general in its set-up; for example, we do not invoke common
Chen, Gengyan; Liu, Jing-Feng; Jiang, Haoxiang; Zhuo, Xiao-Lu; Yu, Yi-Cong; Jin, Chongjun; Wang, Xue-Hua
2013-04-23
The quality factor and mode volume of a nanocavity play pivotal roles in realizing the strong coupling interaction between the nanocavity mode and a quantum dot. We present an extremely simple method to obtain the mode volume and investigate the effect of the slab thickness on the quality factor and mode volume of photonic crystal slab nanocavities. We reveal that the mode volume is approximatively proportional to the slab thickness. As compared with the previous structure finely optimized by introducing displacement of the air holes, via tuning the slab thickness, the quality factor can be enhanced by about 22%, and the ratio between the coupling coefficient and the nanocavity decay rate can be enhanced by about 13%. This can remarkably enhance the capability of the photonic crystal slab nanocavity for realizing the strong coupling interaction. The slab thickness tuning approach is feasible and significant for the experimental fabrication of the solid-state nanocavities.
Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun
2017-10-16
We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.
Spin storage in quantum dot ensembles and single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Heiss, Dominik
2009-10-15
This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h
Spin storage in quantum dot ensembles and single quantum dots
International Nuclear Information System (INIS)
Heiss, Dominik
2009-01-01
This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with
Quantum walks in an array of quantum dots
International Nuclear Information System (INIS)
Manouchehri, K; Wang, J B
2008-01-01
Quantum random walks are shown to have non-intuitive dynamics, which makes them an attractive area of study for devising quantum algorithms for well-known classical problems as well as those arising in the field of quantum computing. In this work, we propose a novel scheme for the physical implementation of a discrete-time quantum random walk using laser excitations of the electronic states of an array of quantum dots. These dots represent the discrete nodes of the walk, while transitions between the energy levels inside each dot correspond to the required coin operation and stimulated Raman adiabatic passage (STIRAP) processes are employed to induce the steps of the walk. The quantum dot design is tailored in such a way as to enable selective coupling of the energy levels. Our simulation results show a close agreement with the ideal quantum walk distribution as well as modest robustness toward noise disturbance
Electromagnetically induced transparency in quantum dot systems
International Nuclear Information System (INIS)
Jiang Yiwen; Zhu Kadi; Wu Zhuojie; Yuan Xiaozhong; Yao Ming
2006-01-01
Electromagnetically induced transparency (EIT) in quantum dot exciton systems in which the exciton behaves as a two-level system is investigated theoretically. It is shown that due to strong exciton-phonon coupling EIT can occur in such a quantum dot system and ultraslow light can propagate. The nonlinear optical absorption and Kerr coefficient based on EIT are also calculated. The numerical results show that giant nonlinear optical effects can be obtained while the frequency of the signal field differs only by an amount of LO phonon frequency from the exciton frequency in quantum dot systems
Impurity effects in two-electron coupled quantum dots: entanglement modulation
International Nuclear Information System (INIS)
Acosta Coden, Diego S; Romero, Rodolfo H; Ferrón, Alejandro; Gomez, Sergio S
2013-01-01
We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulating the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting in two regimes: one of low entanglement and the other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that the magnitude of the oscillator strength of the system could provide an indication of the presence and characteristics of impurities and, therefore, the degree of entanglement. (paper)
Taylor, Robert A.
2010-09-01
These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur
International Nuclear Information System (INIS)
Tarucha, S; Obata, T; Pioro-Ladriere, M; Brunner, R; Shin, Y-S; Kubo, T; Tokura, Y
2011-01-01
Electric dipole spin resonance of two individual electrons and the influence of hyperfine coupling on the spin resonance are studied for a double quantum dot equipped with a micro-magnet. The spin resonance occurs by oscillating the electron in each dot at microwave (MW) frequencies in the presence of a micro-magnet induced stray field. The observed continuous wave (CW) and time-resolved spin resonances are consistent with calculations in which the MW induced AC electric field and micro-magnet induced stray field are taken into account. The influence of hyperfine coupling causes an increase and broadening of the respective CW spin resonance peaks through dynamical nuclear polarization when sweeping up the magnetic field. This behaviour appears stronger for the larger of the two spin resonance peaks and in general becomes more pronounced as the MW power increases, both reflecting that the electron-nuclei interaction is more efficient for the stronger spin resonance. In addition the hyperfine coupling effect only becomes pronounced when the MW induced AC magnetic field exceeds the fluctuating nuclear field.
Silicon quantum dots: surface matters
Czech Academy of Sciences Publication Activity Database
Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina
2014-01-01
Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014
Photovoltaic efficiency of intermediate band solar cells based on CdTe/CdMnTe coupled quantum dots
Prado, Silvio J.; Marques, Gilmar E.; Alcalde, Augusto M.
2017-11-01
In this work we show the calculation of optimized efficiencies of intermediate band solar cells (IBSCs) based on Mn-doped II-VI CdTe/CdMnTe coupled quantum dot (QD) structures. We focus our attention on the combined effects of geometrical and Mn-doping parameters on optical properties and solar cell efficiency. In the framework of {k \\cdot p} theory, we accomplish detailed calculations of electronic structure, transition energies, optical selection rules and their corresponding intra- and interband oscillator strengths. With these results and by following the intermediate band model, we have developed a strategy which allows us to find optimal photovoltaic efficiency values. We also show that the effects of band admixture which can lead to degradation of optical transitions and reduction of efficiency can be partly minimized by a careful selection of the structural parameters and Mn-concentration. Thus, the improvement of band engineering is mandatory for any practical implementation of QD systems as IBSC hardware. Finally, our calculations show that it is possible to reach significant efficiency, up to ∼26%, by selecting a restricted space of parameters such as quantum dot size and shape and Mn-concentration effects, to improve the modulation of optical absorption in the structures.
Quantum dots for quantum information technologies
2017-01-01
This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.
Quantum Dots in Liquid Scintillator
Gooding, Diana
2017-09-01
Quantum dots are semiconducting crystals with dimensions on the order of nanometers. Due to quantum confinement, their size gives rise to optical properties that resemble those of single atoms, rather than bulk material. One of these is their absorption of light shorter than a characteristic wavelength and reemission in a narrow peak around that wavelength. This unique photoluminescence makes quantum dots ideal wavelength shifters. Moreover, their chemistry provides a straight-forward method to suspend heavy elements in organic scintillators. The NuDot collaboration has been pursuing a variety of new quantum dots, and a review of the current results will be presented.
Inter-dot coupling effects on transport through correlated parallel
Indian Academy of Sciences (India)
Transport through symmetric parallel coupled quantum dot system has been studied, using non-equilibrium Green function formalism. The inter-dot tunnelling with on-dot and inter-dot Coulomb repulsion is included. The transmission coefficient and Landaur–Buttiker like current formula are shown in terms of internal states ...
Yao, Xun; Yan, Panpan; Tang, Qinghui; Deng, Anping; Li, Jianguo
2013-10-10
An ultrasensitive electrochemiluminescence (ECL) immunosensor based on CdSe quantum dots (QDs) has been designed for the detection of clenbuterol. The immunosensor was fabricated by layer by layer and characterized with atomic force microscopic images (AFM) and electrochemical impedance spectra (EIS). In oxygen-saturated pH=9.0 Tris-HCl buffer, a strong ECL emission of QDs could be observed during the cathodic process due to the H2O2 product from electrochemical reduction of dissolved oxygen. Upon the formation of immunocomplex, the second antibody labeled with horseradish peroxidase was simply immobilized on the electrode surface. The ECL emission decreased since steric hindrance of the immunocomplex slowed down the electron-transfer speed of dissolved oxygen, and also could be greatly amplified by an enzymatic cycle to consume the self-produced coreactant. Using clenbuterol as model analyte, the ECL intensity was determined by the concentration of competitive immunoassay of clenbuterol with a wide calibration in the range of 0.05 ng mL(-1) to 1000 ng mL(-1), and a low detection limit was 0.02 ng mL(-1). The immunosensor shows good stability and fabrication reproducibility. It was applied to detecting practical samples with the satisfactory results. This immunosensing strategy opens a new avenue for detection of residue and application of QDs in ECL biosensing. Copyright © 2013 Elsevier B.V. All rights reserved.
Poszwa, A.
2018-05-01
We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.
Kosarev, Alexander; Chaldyshev, Vladimir; Toropov, Nikita; Gladskikh, Igor; Gladskikh, Polina; Baryshnikova, Kseniia; Preobrazhenskiy, Valeriy; Putyato, Michael; Semyagin, Boris; Vartanyan, Tigran
2017-08-01
A stack of five layers of epitaxial InAs QDs with GaAs barriers was grown by molecular-beam epitaxy. The upper layer of QDs was capped by 3nm-GaAs/3nm-AlAs/4nm-GaAs layer sequence. Then, a thin silver layer was added via physical vapor deposition. After annealing isolated silver nanoparticles were formed above the layer of buried InAs quantum dots. We studied interplay of the exciton resonance in InAs QDs and plasmon resonance in Ag nanoparticles. In particular, we observed more than twofold enhancement of the exciton photoluminescence intensity from the InAs QDs when they were coupled to the silver nanoparticles.
Payette, Christopher
2011-12-01
Performing transport measurements on weakly coupled vertical double quantum dots, we study by magneto-resonant-tunneling spectroscopy, single-particle energy spectra of the constituent dots over a wide energy window. The measured energy spectra are well modeled overall by ideal spectra calculated for elliptical and parabolic in-dot-plane confinement potentials. However, in regions where single-particle energy levels are naively expected to cross, we observe pronounced level anti-crossing behaviour and strong resonant current variations (both enhancement and suppression). Within a coherent tunneling picture, these effects can be attributed to coherent level mixing induced by weak perturbations in the nearly ideal dot confinement potentials. We analyze the energy spectra in detail, and focus on examples of two-, three- and four-level crossings where we observe the suppression of an otherwise strong current resonance, a signature of dark state formation due to destructive interference. The mixing we measure and model at two three-level crossings represents an all-electrical analogue of coherent population trapping. We also explore the limitations of the applicability of the coherent level mixing model and demonstrate in-situ alteration of the coupling between levels. We further examine the electron spin-nuclear spin (hyperfine) interaction. In the familiar two-electron spin blockade regime, on application of an out-of-dot-plane magnetic field, we observe current switching and hysteresis, and a funnel-like structure in the leakage current, all hallmarks of the hyperfine interaction. The measurements bring to light a strong gate voltage dependence, significant device-to-device variations, and an intricate bias voltage history dependence not accounted for in any existing model. Unexpectedly, we also observe signatures of the hyperfine interaction at high bias, well outside the spin blockade regime. We characterize these features and suggest how the hyperfine interaction
Quantum Dots in Photonic Crystal Waveguides
DEFF Research Database (Denmark)
Sollner, Immo Nathanael
This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission into the...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate.......This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...
Directory of Open Access Journals (Sweden)
Hideki Gotoh
2014-10-01
Full Text Available Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL method in a coherently coupled exciton-biexciton system in a single quantum dot (QD. PL and photoluminescence excitation spectroscopy (PLE are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicate that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.
International Nuclear Information System (INIS)
Urbanczyk, A.; Hamhuis, G. J.; Noetzel, R.
2010-01-01
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.
Entangled exciton states in quantum dot molecules
Bayer, Manfred
2002-03-01
Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For
2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids
Xu, Jixian
2018-04-20
Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon 3 . Advances in surface passivation2,4-7, combined with advances in device structures 8 , have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 2016 9 . Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9-11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of JSC (32 mA cm-2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.
Directory of Open Access Journals (Sweden)
Somsak Panyakeow
2010-10-01
Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.
Single-charge tunneling in ambipolar silicon quantum dots
Müller, Filipp
2015-01-01
Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier
Energy Technology Data Exchange (ETDEWEB)
Yao, Xun; Yan, Panpan; Tang, Qinghui [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); The Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Suzhou 215123 (China); Deng, Anping, E-mail: denganping@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); The Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Suzhou 215123 (China); Li, Jianguo, E-mail: lijgsd@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); The Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Suzhou 215123 (China)
2013-10-10
Graphical abstract: -- Highlights: •An ultrasensitive ECL immunosensor of CdSe QDs for clenbuterol determination is developed. •The CdSe QDs showed great biocompatibility and could be easier to make direct use of such QDs in the region of biological system. •Enzymatic amplification strategy was proposed by combining the coreactant and pAb/GaRIgG-HRP. •Enzymatic amplification increased ECL emission and extended the analyte in presence of substrate. •It provided a method for detecting clenbuterol and enlarged the usage of QDs in ECL biosensing. -- Abstract: An ultrasensitive electrochemiluminescence (ECL) immunosensor based on CdSe quantum dots (QDs) has been designed for the detection of clenbuterol. The immunosensor was fabricated by layer by layer and characterized with atomic force microscopic images (AFM) and electrochemical impedance spectra (EIS). In oxygen-saturated pH = 9.0 Tris-HCl buffer, a strong ECL emission of QDs could be observed during the cathodic process due to the H{sub 2}O{sub 2} product from electrochemical reduction of dissolved oxygen. Upon the formation of immunocomplex, the second antibody labeled with horseradish peroxidase was simply immobilized on the electrode surface. The ECL emission decreased since steric hindrance of the immunocomplex slowed down the electron-transfer speed of dissolved oxygen, and also could be greatly amplified by an enzymatic cycle to consume the self-produced coreactant. Using clenbuterol as model analyte, the ECL intensity was determined by the concentration of competitive immunoassay of clenbuterol with a wide calibration in the range of 0.05 ng mL{sup −1} to 1000 ng mL{sup −1}, and a low detection limit was 0.02 ng mL{sup −1}. The immunosensor shows good stability and fabrication reproducibility. It was applied to detecting practical samples with the satisfactory results. This immunosensing strategy opens a new avenue for detection of residue and application of QDs in ECL biosensing.
Dynamics of Energy Transfer in Quantum Dot Arrays
Al-Ahmadi, A. N.; Ulloa, S. E.
2004-04-01
Förster-type coupling is one of the most important mechanisms that influence the energy transport properties in a quantum dot array. We explore this mechanism by calculating the coupling strength V_F, and by studying the dynamics of the exciton state created in an array of quantum dots using the time evolution of the density matrix approach. We first estimate the coupling strength VF of Förster interaction based on microscopic descriptions of the exciton levels in the quantum dot. We study this parameter for different materials (CdS, CdSe,InP, and GaAs) as function of the dot size. The results show that the maximum value of VF depends on the specific sizes and that each material has optimal coupling for different pairs of quantum dot radii. Other key parameters that govern energy transport are determined for various materials and sizes of quantum dots. Second, we consider a model of coupled quantum dots with two exciton levels in each dot, one optically passive and another active. Analysis of the population of each level when the Förster channel is opened shows this is responsible for interesting physical behavior in different coupling regimes. Realistic parameters used to study the dynamics of the exciton state for dimer and trimer quantum dot clusters, allow us direct comparison with recent experiments by Klimov et al. Supported by US DOE, and Indiana 21^st Century Fund Research and Technology.
GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices
Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro
2017-04-01
We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω1 - ω2 = ω2 - ω3) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω1 and ω2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω3 (= 2ω2 - ω1) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.
The Coupling of Zero-Dimensional Exciton and Photon States: A Quantum Dot in a Spherical Microcavity
2001-06-01
the electric 179 180 Microcavity and Photonic Cristal (a) (b) _..•rQ Fig. 1. (a) A schematic diagram of a spherical microcavity with a quantum dot at...core is 2.7 while the refractive indices 182 Microcavity and Photonic Cristal of the layers forming the Bragg reflector are 1.45 and 2.7 and correspond
Coherent transport through interacting quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hiltscher, Bastian
2012-10-05
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Coherent transport through interacting quantum dots
International Nuclear Information System (INIS)
Hiltscher, Bastian
2012-01-01
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Magnetic control of dipolaritons in quantum dots
International Nuclear Information System (INIS)
Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A
2016-01-01
Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)
Directory of Open Access Journals (Sweden)
Vyacheslav A. Elyukhin
2013-01-01
Full Text Available Arrays of single photon emitters with the same energy of luminescence are necessary for the development of quantum imformation technology. The studied epitaxial quantum dots have an undresired inhomogeneity of luminescence. Here, AxB1-xCyD1-y alloys of AC, AD, BC and BD compounds are presented as semiconductors in which non-random distribution of cations and anions may result in self-assembling of identical tetrahedral clusters. It can be due to the preference of AC and BD bonding over AD and BC one, a decrease of the strain energy or both of them. The self-assembling conditions of 1P4Ga clusters in AlN-rich AlxGa1-xPyN1-y alloys with Ga and phosphorus contents in the dilute and ultra dilute limits, correspondingly, are represented. All phosphorus atoms should be in 1P4Ga clusters at ~1000 oC if the Ga content reaches several percents. AlN-rich AlxGa1-xPyN1-y alloys with 1P4Ga clusters are promising semiconductors for fabrication of arrays of identical single photon emitters with the same energy of luminescence
International Nuclear Information System (INIS)
Pocas, Luiz Carlos; Sawata, Marcella Ferraz; Lourenco, Sidney Alves; Laureto, Edson; Duarte, Jose Leonil; Dias, Ivan Frederico Lupiano; Quivy, A.A.
2012-01-01
Full text: The notable progress in the fabrication of low-dimensional semiconductor structures during the last years has made it possible to reduce the effective device dimension from three-dimensional bulk materials, to low dimensional quantum systems, as for example, to quasi-two dimensional quantum well systems and to quasi-zero dimensional quantum dots systems. Semiconductors quantum dots (QDs) have attracted considerable interest from both fundamental and technological point of view and have been extensively studied in aspects involving its structural properties and the electronic structure of the confined charge carriers. These systems have been utilized for applications on optoelectronics devices such as lasers, detectors, photodiodes, solar cells, etc. In despite of its fundamental importance, many aspects of their behavior are still not fully understood including, as for example, carrier capture and escape, optical transitions, effects of the inhomogeneous size and energy distribution, etc. Quantum dots grown by Stranski-Krastanov (SK) technique are self-assembled islands, favored by relaxation of the elastic energy that emerge due to the difference of lattice parameter between the epitaxial layer and the substratum. One of the challenges in growing of QDs by SK is to have control of both size and distribution of the islands in the samples. Recently, the growth of samples with vertically stacked multilayer separated by a layer of another semiconductor material, known as stacked QDs, have shown a vertical alignment of QDs which leads to a better QDs size distribution for the upper layers. The strength of electronic coupling, in the case of vertically stacked QDs, as well as the QDs size distribution, is controlled by thickness of the layers that separate the quantum dots (spacer layers). In this work we present a study from a set of self-assembled stacked InAs/GaAs double-quantum-dots grown on GaAs-(001) substrates by molecular beam epitaxy obtained by SK
Energy Technology Data Exchange (ETDEWEB)
Pocas, Luiz Carlos; Sawata, Marcella Ferraz [Universidade Tecnologica Federal do Parana (UTFPR), Apucarana, PR (Brazil); Lourenco, Sidney Alves [Universidade Tecnologica Federal do Parana (UTFPR), Londrina, PR (Brazil); Laureto, Edson; Duarte, Jose Leonil; Dias, Ivan Frederico Lupiano [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica; Quivy, A.A. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica
2012-07-01
Full text: The notable progress in the fabrication of low-dimensional semiconductor structures during the last years has made it possible to reduce the effective device dimension from three-dimensional bulk materials, to low dimensional quantum systems, as for example, to quasi-two dimensional quantum well systems and to quasi-zero dimensional quantum dots systems. Semiconductors quantum dots (QDs) have attracted considerable interest from both fundamental and technological point of view and have been extensively studied in aspects involving its structural properties and the electronic structure of the confined charge carriers. These systems have been utilized for applications on optoelectronics devices such as lasers, detectors, photodiodes, solar cells, etc. In despite of its fundamental importance, many aspects of their behavior are still not fully understood including, as for example, carrier capture and escape, optical transitions, effects of the inhomogeneous size and energy distribution, etc. Quantum dots grown by Stranski-Krastanov (SK) technique are self-assembled islands, favored by relaxation of the elastic energy that emerge due to the difference of lattice parameter between the epitaxial layer and the substratum. One of the challenges in growing of QDs by SK is to have control of both size and distribution of the islands in the samples. Recently, the growth of samples with vertically stacked multilayer separated by a layer of another semiconductor material, known as stacked QDs, have shown a vertical alignment of QDs which leads to a better QDs size distribution for the upper layers. The strength of electronic coupling, in the case of vertically stacked QDs, as well as the QDs size distribution, is controlled by thickness of the layers that separate the quantum dots (spacer layers). In this work we present a study from a set of self-assembled stacked InAs/GaAs double-quantum-dots grown on GaAs-(001) substrates by molecular beam epitaxy obtained by SK
Cadmium telluride quantum dots advances and applications
Donegan, John
2013-01-01
Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign
2015-07-09
AFRL-OSR-VA-TR-2015-0221 New Meta Nanomaterials Extension II of Optical Enhancement and Photorefractive Two-Beam Coupling - Synthesis and Fabrication...DATES COVERED (From - To) 01-08-2013 - 01-02-2015 4. TITLE AND SUBTITLE New Meta Nanomaterials Extension II of Optical Enhancement and...conjugated copolymer at different pH (5.5., 7 and 10) at 50 °C for 3 h, under magnetic stirring. Cadmium sulfide quantum dots with face centered
Biosensing with Luminescent Semiconductor Quantum Dots
Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi
2006-01-01
Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapti...
Energy Technology Data Exchange (ETDEWEB)
Ben Mahrsia, R.; Choubani, M., E-mail: mohsenchoubani3@yahoo.fr; Bouzaiene, L.; Maaref, H.
2016-06-25
In this paper we explore the structure parameters, hydrostatic pressure and temperature effects on Nonlinear optical rectification (NOR) in an asymmetric vertically coupled lens-shaped InAs/GaAs quantum dots. During epitaxial growth, lens-shaped quantum dots (QDs) are formed on the wetting layer (WL). Many theoretical works have neglected WL and its effect on nonlinear optical properties of QD-based systems for sake of simplicity. However, in this work the WL has been shown to be so influential in the intersubband energy and nonlinear optical rectification magnitude. Also, a detailed and comprehensive study of the nonlinear optical rectification is theoretical investigated within the framework of the compact density-matrix approach and finite difference method (FDM). It's found that nonlinear optical rectification coefficient is strongly affected not only by the WL, but also by the pressure, temperature and the coupled width between the QDs. Obtained results revealed that a red or a blue shift cane be observed. This behavior in the NOR gives a new degree of freedom in regions of interest for device applications. - Highlights: • Vertically coupled lens-shaped InAs/GaAs quantum dots is investigated. • Photon energy shifts towards the red with increasing pressure. • Photon energy shifts towards the blue with increasing temperature. • Intersubband energy decreases with increasing the wetting layer width. • Nonlinear optical rectification magnitude is controlled and adjusted.
Majorana bound states in a coupled quantum-dot hybrid-nanowire system
DEFF Research Database (Denmark)
Deng, M. T.; Vaitiekenas, S.; Hansen, E. B.
2016-01-01
Hybrid nanowires combining semiconductor and superconductor materials appear well suited for the creation, detection, and control of Majorana bound states (MBSs). We demonstrate the emergence of MBSs from coalescing Andreev bound states (ABSs) in a hybrid InAs nanowire with epitaxial Al, using...... with the end-dot bound state, which is in agreement with a numerical model. The ABS/MBS spectra provide parameters that are useful for understanding topological superconductivity in this system....
Quantum dots in photonic crystals for integrated quantum photonics
Kim, Je-Hyung; Richardson, Christopher J. K.; Leavitt, Richard P.; Waks, Edo
2017-08-01
Integrated quantum photonic technologies hold a great promise for application in quantum information processing. A major challenge is to integrate multiple single photon sources on a chip. Quantum dots are bright sources of high purity single photons, and photonic crystals can provide efficient photonic platforms for generating and manipulating single photons from integrated quantum dots. However, integrating multiple quantum dots with photonic crystal devices still remains as a challenging task due to the spectral randomness of the emitters. Here, we present the integration of multiple quantum dots with individual photonic crystal cavities and report quantum interference from chip-integrated multiple quantum dots. To solve the problem of spectral randomness, we introduce local engineering techniques for tuning multiple quantum dots and cavities. From integrated quantum dot devices we observe indistinguishable nature of single photons from individual quantum dots on the same chip. Therefore, our approach paves the way for large-scale quantum photonics with integrated quantum emitters.
Quantum phase transition of light as a control of the entanglement between interacting quantum dots
Barragan, Angela; Vera-Ciro, Carlos; Mondragon-Shem, Ian
We study coupled quantum dots arranged in a photonic crystal, interacting with light which undergoes a quantum phase transition. At the mean-field level for the infinite lattice, we compute the concurrence of the quantum dots as a measure of their entanglement. We find that this quantity smoothly
Menéndez-Miranda, Mario; Encinar, Jorge Ruiz; Costa-Fernández, José M; Sanz-Medel, Alfredo
2015-11-27
Hyphenation of asymmetric flow field-flow fractionation (AF4) to an on-line elemental detection (inductively coupled plasma-mass spectrometry, ICP-MS) is proposed as a powerful diagnostic tool for quantum dots bioconjugation studies. In particular, conjugation effectiveness between a "model" monoclonal IgG antibody (Ab) and CdSe/ZnS core-shell Quantum Dots (QDs), surface-coated with an amphiphilic polymer, has been monitored here by such hybrid AF4-ICP-MS technique. Experimental conditions have been optimized searching for a proper separation between the sought bioconjugates from the eventual free reagents excesses employed during the bioconjugation (QDs and antibodies). Composition and pH of the carrier have been found to be critical parameters to ensure an efficient separation while ensuring high species recovery from the AF4 channel. An ICP-MS equipped with a triple quadropole was selected as elemental detector to enable sensitive and reliable simultaneous quantification of the elemental constituents, including sulfur, of the nanoparticulated species and the antibody. The hyphenated technique used provided nanoparticle size-based separation, elemental detection, and composition analysis capabilities that turned out to be instrumental in order to investigate in depth the Ab-QDs bioconjugation process. Moreover, the analytical strategy here proposed allowed us not only to clearly identify the bioconjugation reaction products but also to quantify nanoparticle:antibodies bioconjugation efficiency. This is a key issue in future development of analytical and bioanalytical photoluminescent QDs applications. Copyright © 2015 Elsevier B.V. All rights reserved.
Quantitative analysis of quantum dot dynamics and emission spectra in cavity quantum electrodynamics
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Lodahl, Peter
2013-01-01
-resolved measurements reveal that the actual coupling strength is significantly smaller than anticipated from the spectral measurements and that the quantum dot is rather weakly coupled to the cavity. We suggest that the observed Rabi splitting is due to cavity feeding by other quantum dots and/or multi...
Energy Technology Data Exchange (ETDEWEB)
Datta, Nirmal Kumar [Department of Physics, Suri Vidyasagar College, Suri, Birbhum 731 101, West Bengal (India); Ghosh, Manas, E-mail: pcmg77@rediffmail.com [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)
2010-06-16
Graphical abstract: The pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot is explored. We have considered Gaussian impurity centers. Under a periodically fluctuating impurity potential, the system reveals a long time dynamics that is undulatory in nature. Coupled to the dopant location, the domain of influence of the impurity potential affects the separation between the eigenstates of the unperturbed system. The investigation points to a threshold value of spatial extension of impurity potential. Above this threshold value, the dopant location becomes important in monitoring the minimum value of impurity potential required to cause excitation. - Abstract: We explore the pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot. The quantum dot is 2-dimensional and contains one electron which is harmonically confined. We have considered Gaussian impurity centers. A static transverse magnetic field is also present. Under a periodically fluctuating impurity potential, the system reveals a long time dynamics that is undulatory in nature. Coupled to the dopant location, the domain of influence of the impurity potential affects the separation between the eigenstates of the unperturbed system. The investigation points to a threshold value of spatial extension of impurity potential. Above this threshold value, the dopant location becomes important in monitoring the minimum value of impurity potential required to cause excitation.
Quantum photonics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide
2016-01-01
We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...
Quantum optics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean
2016-01-01
We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...
Hybrid quantum-classical modeling of quantum dot devices
Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas
2017-11-01
The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.
Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities
DEFF Research Database (Denmark)
Madsen, Kristian Høeg
In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light......-matter interaction in the micropiller caivty is so strong that we measure non-Markovian dynamics of the quantum dot, and we compare to the Jaynes-Cummings model with all parameters independently determined. We find an excellent agreement when comparing the dynamics, but the emission spectra show significant...... deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...
Decay dynamics of radiatively coupled quantum dots in photonic crystal slabs
DEFF Research Database (Denmark)
Kristensen, Philip Trøst; Mørk, Jesper; Lodahl, Peter
2011-01-01
We theoretically investigate the influence of radiative coupling on light emission in a photonic crystal slab structure. The calculation method is based on a formalism that combines the photon Green's tensor with a self-consistent Dyson equation approach and is applicable to a wide range of probl......We theoretically investigate the influence of radiative coupling on light emission in a photonic crystal slab structure. The calculation method is based on a formalism that combines the photon Green's tensor with a self-consistent Dyson equation approach and is applicable to a wide range...
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:
Directory of Open Access Journals (Sweden)
Somsak Panyakeow
2010-10-01
Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.
Electrical control of spontaneous emission and strong coupling for a single quantum dot
DEFF Research Database (Denmark)
Laucht, A.; Hofbauer, F.; Hauke, N.
2009-01-01
coupling regime, and electrical control of zerodimensional polaritons is demonstrated for the highest-Q cavities (Q > 12 000). Vacuum Rabi splittings up to 120μeV are observed, larger than the linewidths of either the decoupled exciton ( 6 40μeV) or cavity mode. These observations represent a voltage...
Large quantum dots with small oscillator strength
DEFF Research Database (Denmark)
Stobbe, Søren; Schlereth, T.W.; Höfling, S.
2010-01-01
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....
Phonon-assisted decoherence and tunneling in quantum dot molecules
DEFF Research Database (Denmark)
Grodecka-Grad, Anna; Foerstner, Jens
2011-01-01
We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal electron-phonon couplings representing real and virtual...... processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...
Spin current through quantum-dot spin valves
International Nuclear Information System (INIS)
Wang, J; Xing, D Y
2006-01-01
We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations
Electron correlations in quantum dots
International Nuclear Information System (INIS)
Tipton, Denver Leonard John
2001-01-01
Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be
On-chip quantum optics with quantum dots and superconducting resonators
Deng, Guang-Wei; Guo, Guo-Ping; Guo, Guang-Can
2016-11-01
Benefit from the recent nanotechnology process, people can integrate different nanostructures on a single chip. Particularly, quantum dots (QD), which behave as artificial atoms, have been shown to couple with a superconducting resonator, indicating that quantum-dot based quantum chip has a highly scalable possibility. Here we show a quantum chip architecture by combining graphene quantum dots and superconducting resonators together. A double quantum dot (DQD) and a microwave hybrid system can be described by the Jaynes-Cummings model, while a multi-quantum-dots system is conformed to the Tavis-Cummings model. These simple quantum optics models are experimentally realized in our device, providing a compelling platform for both graphene study and potential applications.
A triple quantum dot in a single-wall carbon nanotube
DEFF Research Database (Denmark)
Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.
2008-01-01
A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...
Erlingsson, S.I.
2003-01-01
The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,
Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.
2013-01-01
Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of
Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)
2016-05-03
This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.
Zamani, A.; Azargoshasb, T.; Niknam, E.; Mohammadhosseini, E.
2017-06-01
In this work, effects of external electric and magnetic fields in the presence of both Rashba and Dresselhaus spin-orbit couplings on the second and third harmonic generations (SHG and THG) of a lens-shaped GaAs quantum dot are studied. Energy eigenvalues and eigenvectors are calculated numerically and optical properties are obtained using the compact density matrix approach. Our results reveal that, an increase in the magnetic field, leads to both red and blue shifts in resonant peaks of both SHG and THG. On the other hand, augmentation of electric field leads to blue shift in all resonant peaks except the first peak related to lowest transition. Also the dipole moment matrix elements increase by enhancing both electric and magnetic fields. Finally the effect of dot size is studied and results illustrate that increment in size reduces the transition energies except the lowest one and thus leads to red shift in resonant peaks while the first peak remains constant.
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...
Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots
International Nuclear Information System (INIS)
Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.
2000-01-01
By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics
Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange
International Nuclear Information System (INIS)
Hao Xiang; Zhu Shiqun
2007-01-01
The universal quantum computation is obtained when there exists asymmetric anisotropic exchange between electron spins in coupled semiconductor quantum dots. The asymmetric Heisenberg model can be transformed into the isotropic model through the control of two local unitary rotations for the realization of essential quantum gates. The rotations on each qubit are symmetrical and depend on the strength and orientation of asymmetric exchange. The implementation of the axially symmetric local magnetic fields can assist the construction of quantum logic gates in anisotropic coupled quantum dots. This proposal can efficiently use each physical electron spin as a logical qubit in the universal quantum computation
Templated self-assembly of SiGe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dais, Christian
2009-08-19
-dimensional quantum dot crystals. The analyzed SiGe quantum dots have a type II band alignment, with holes confined in the dots and electrons confined in the strained Si in the surrounding of the dots. The recombination energy of these indirect excitons depends on size, Ge content and strain distribution of the quantum dots. It is shown that the structural uniformity of the created quantum dot structures is reflected in their optical properties, resulting in a narrow and stable photoluminescence emission with well separated no-phonon and transversal optical phonon lines. The narrow dot luminescence can be shifted by varying Ge coverage, dot size or dot period. Furthermore excitation-power dependent and temperature dependent photoluminescence measurements are discussed. Band structure calculations indicate that the electronic states of the quantum dot crystals are electronically coupled at least in vertical direction. For the quantum dot crystal with a lateral period of 35 nm even a coupling in all three dimensions is calculated. Thus, the three-dimensional dot arrangement represents not only from the structural but also from the electronic point of view an artificial crystal. (orig.)
Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide
DEFF Research Database (Denmark)
Daveau, Raphaël S.; Balram, Krishna C.; Pregnolato, Tommaso
2017-01-01
Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide (PCWG) singlephoton source relying on evanescent coupling of the light field from a tapered...... transfer it to the fiber. The applied outcoupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources....
Semiconductor quantum-dot lasers and amplifiers
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.
2002-01-01
-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...
Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min
2016-06-08
The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.
Fabrication of quantum-dot devices in graphene
Directory of Open Access Journals (Sweden)
Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi
2010-01-01
Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.
Spin-orbit-enhanced Wigner localization in quantum dots
DEFF Research Database (Denmark)
Cavalli, Andrea; Malet, F.; Cremon, J. C.
2011-01-01
We investigate quantum dots with Rashba spin-orbit coupling in the strongly-correlated regime. We show that the presence of the Rashba interaction enhances the Wigner localization in these systems, making it achievable for higher densities than those at which it is observed in Rashba-free quantum...... dots. Recurring shapes in the pair distribution functions of the yrast spectrum, which might be associated with rotational and vibrational modes, are also reported....
Yun, Hyeong Jin; Paik, Taejong; Diroll, Benjamin; Edley, Michael E; Baxter, Jason B; Murray, Christopher B
2016-06-15
Light absorption and electron injection are important criteria determining solar energy conversion efficiency. In this research, monodisperse CdSe quantum dots (QDs) are synthesized with five different diameters, and the size-dependent solar energy conversion efficiency of CdSe quantum dot sensitized solar cell (QDSSCs) is investigated by employing the atomic inorganic ligand, S(2-). Absorbance measurements and transmission electron microscopy show that the diameters of the uniform CdSe QDs are 2.5, 3.2, 4.2, 6.4, and 7.8 nm. Larger CdSe QDs generate a larger amount of charge under the irradiation of long wavelength photons, as verified by the absorbance results and the measurements of the external quantum efficiencies. However, the smaller QDs exhibit faster electron injection kinetics from CdSe QDs to TiO2 because of the high energy level of CBCdSe, as verified by time-resolved photoluminescence and internal quantum efficiency results. Importantly, the S(2-) ligand significantly enhances the electronic coupling between the CdSe QDs and TiO2, yielding an enhancement of the charge transfer rate at the interfacial region. As a result, the S(2-) ligand helps improve the new size-dependent solar energy conversion efficiency, showing best performance with 4.2-nm CdSe QDs, whereas conventional ligand, mercaptopropionic acid, does not show any differences in efficiency according to the size of the CdSe QDs. The findings reported herein suggest that the atomic inorganic ligand reinforces the influence of quantum confinement on the solar energy conversion efficiency of QDSSCs.
Ultrasmall colloidal PbS quantum dots
International Nuclear Information System (INIS)
Reilly, Nick; Wehrung, Michael; O'Dell, Ryan Andrew; Sun, Liangfeng
2014-01-01
Ultrasmall colloidal lead sulfide quantum dots can increase the open circuit voltages of quantum-dot-based solar cells because of their large energy gap. Their small size and visible or near infrared light-emitting property make them attractive to the applications of biological fluorescence labeling. Through a modified organometallic route, we can synthesize lead sulfide quantum dots as small as 1.6 nm in diameter. The low reaction temperature and the addition of a chloroalkane cosolvent decrease the reaction rate, making it possible to obtain the ultrasmall quantum dots. - Highlights: • Ultrasmall colloidal PbS quantum dots as small as 1.6 nm in diameter are synthesized. • The quantum dots emit red light with photoluminescence peak at 760 nm. • The growth temperature is as low as 50 °C. • Addition of cosolvent 1,2-dichloroethane in the reaction decreases the reaction rate
DEFF Research Database (Denmark)
Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter
2010-01-01
treatments. A pronounced consequence is the emergence of a phonon induced spectral asymmetry when detuning the cavity from the quantum-dot resonance. The asymmetry can only be explained when considering the polaritonic quasiparticle nature of the quantum-dot-cavity system. Furthermore, a temperature induced......We investigate the influence of electron-phonon interactions on the dynamical properties of a quantum-dot-cavity QED system. We show that non-Markovian effects in the phonon reservoir lead to strong changes in the dynamics, arising from photon-assisted dephasing processes, not present in Markovian...
Optically Driven Spin Based Quantum Dots for Quantum Computing - Research Area 6 Physics 6.3.2
2015-12-15
SECURITY CLASSIFICATION OF: This program conducted experimental and theoretical research aimed at developing an optically driven quantum dot quantum ...computer, where, the qubit is the spin of the electron trapped in a self-assembled quantum dot in InAs. Optical manipulation using the trion state...reports. In this reporting period, we discovered the nuclear spin quieting first discovered in 2008 is present in vertically coupled quantum dots but
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Millimeter Wave Modulators Using Quantum Dots
National Research Council Canada - National Science Library
Prather, Dennis W
2008-01-01
In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...
Stark shifting two-electron quantum dot
International Nuclear Information System (INIS)
Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.
2003-01-01
Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots
Hydrogenic impurity in double quantum dots
International Nuclear Information System (INIS)
Wang, X.F.
2007-01-01
The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically
Quantum computation with nuclear spins in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Christ, H.
2008-01-24
The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin
Quantum computation with nuclear spins in quantum dots
International Nuclear Information System (INIS)
Christ, H.
2008-01-01
The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin
Energy Technology Data Exchange (ETDEWEB)
Huebel, A.
2007-11-22
In this work, a double quantum dot system is studied whose two dots are electrically insulated from one another and contacted independently with two leads. The geometry is optimized to maximize the capacitive interaction between the dots. The samples are characterized by electrical transport measurements in a dilution refrigerator. It is then studied at different tunnel couplings how the capacitive interaction influences the electrical transport in equilibrium. Under certain conditions correlated tunnel processes can be observed. A simple model is derived that serves to understand these processes. The double quantum dot system is defined in lateral arrangement by reactive ion etching of a two-dimensional electron system located only 50 nm below the surface of a GaAs-AlGaAs heterostructure. The samples are characterized in a dilution refrigerator at 25 mK near the common pinch-off point of all four tunnel barriers. A measurement of the differential equilibrium conductances of both quantum dots as a function of two gate voltages yields a honeycomb-like charge stability diagram. The most important sample characteristic is the ratio between the interaction capacitance and the total capacitance of a single quantum dot. For the optimized sample, this ratio turns out to be larger than one third near the common pinch-off point, with a single-dot charging energy of up to 800 {mu}eV. At more positive gate voltages, the capacitances between the quantum dots and their leads increase more and more, thereby diminishing the charging energy. It is shown for the optimized sample that all capacitance coefficients except the dot-lead capacitances are constant to within considerable accuracy over several Coulomb blockade oscillations. In order to measure correlated electrical transport in equilibrium, special parameter regions are examined in which the charges of both quantum dots cannot fluctuate independently of each other. An analytical formula is derived that describes the
Quantum Dot Devices for Optical Signal Processing
DEFF Research Database (Denmark)
Chen, Yaohui
This thesis describes the physics and applications of quantum dot semiconductor optical ampliers through numerical simulations. As nano-structured materials with zero-dimensional quantum connement, semiconductor quantum dot material provides a number of unique physical properties compared...... with other semiconductor materials. The understanding of such properties is important in order to improve the performance of existing devices and to trigger the development of new semiconductor devices for dierent optical signal processing functionalities in the future. We present a detailed quantum dot...... semiconductor optical amplier model incorporating a carrier dynamics rate equation model for quantum dots with inhomogeneous broadening as well as equations describing propagation. A phenomenological description has been used to model the intradot electron scattering between discrete quantum dot states...
Colloidal quantum dot photodetectors
Konstantatos, Gerasimos
2011-05-01
We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.
Kovalev, Vadim M.; Tse, Wang-Kong
2017-11-01
We develop a microscopic theory for the relaxation dynamics of an optically pumped two-level system (TLS) coupled to a bath of weakly interacting Bose gas. Using Keldysh formalism and diagrammatic perturbation theory, expressions for the relaxation times of the TLS Rabi oscillations are derived when the boson bath is in the normal state and the Bose–Einstein condensate (BEC) state. We apply our general theory to consider an irradiated quantum dot coupled with a boson bath consisting of a two-dimensional dipolar exciton gas. When the bath is in the BEC regime, relaxation of the Rabi oscillations is due to both condensate and non-condensate fractions of the bath bosons for weak TLS-light coupling and pre dominantly due to the non-condensate fraction for strong TLS-light coupling. Our theory also shows that a phase transition of the bath from the normal to the BEC state strongly influences the relaxation rate of the TLS Rabi oscillations. The TLS relaxation rate is approximately independent of the pump field frequency and monotonically dependent on the field strength when the bath is in the low-temperature regime of the normal phase. Phase transition of the dipolar exciton gas leads to a non-monotonic dependence of the TLS relaxation rate on both the pump field frequency and field strength, providing a characteristic signature for the detection of BEC phase transition of the coupled dipolar exciton gas.
Realization of electrically tunable single quantum dot nanocavities
Energy Technology Data Exchange (ETDEWEB)
Hofbauer, Felix Florian Georg
2009-03-15
We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot
Double Rashba Quantum Dots Ring as a Spin Filter
Directory of Open Access Journals (Sweden)
Chi Feng
2008-01-01
Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.
Thick-shell nanocrystal quantum dots
Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM
2011-05-03
Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
Many electron effects in semiconductor quantum dots
Indian Academy of Sciences (India)
Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...
Biocompatible Quantum Dots for Biological Applications
Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.
2011-01-01
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935
DEFF Research Database (Denmark)
Nielsen, Per Kær; Lodahl, Peter; Jauho, Antti-Pekka
2013-01-01
We study the fundamental limit on single-photon indistinguishability imposed by decoherence due to phonon interactions in semiconductor quantum dot-cavity quantum electrodynamics systems. Employing an exact diagonalization approach we find large differences compared to standard methods. An import...
Quantum dot devices for optical communications
DEFF Research Database (Denmark)
Mørk, Jesper
2005-01-01
-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...
Coherent optoelectronics with single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de
2008-11-12
The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.
Electron transport in quantum dots
2003-01-01
When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...
Quantum dots: lasers and amplifiers
Bimberg, D
2003-01-01
Continuous wave room-temperature output power of approx 3 W for edge emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mu m. Characteristic temperatures up to 170 K below 330 K are realized. Simultaneously, differential efficiency exceeds 80% for these devices. Lasers emitting up to 12 W at 1140-1160 nm are useful as pump sources for Tm sup 3 sup + -doped fibres for frequency up-conversion to 470 nm. Both types of lasers show transparency current densities of 6 A cm sup - sup 2 per dot layer, eta sub i sub n sub t = 98% and alpha sub i around 1.5 cm sup - sup 1. Long operation lifetimes (above 3000 h at 50 deg C heatsink temperature at 1.5 W CW) and improved radiation hardness as compared to quantum well (QW) devices are manifested. Cut-off frequencies of about 10 GHz at 1100 nm and 6 GHz at 1300 nm and low alpha factors resulting in reduced filamentation and improved M sup 2 values in single-mode operation are ...
Tang, Tingting; Deng, Jingjing; Zhang, Min; Shi, Guoyue; Zhou, Tianshu
2016-01-01
Based on the highly sensitivity and stable-fluorescence of water-soluble CdTe/CdS core-shell quantum dots (QDs) with broad-specificity DNA aptamers, a novel ratiometric detection strategy was proposed for the sensitive detection of organophosphorus pesticides by capillary electrophoresis with laser-induced fluorescence (CE-LIF). The as-prepared QDs were first conjugated with the amino-modified oligonucleotide (AMO) by amidation reaction, which is partial complementary to the DNA aptamer of organophosphorus pesticides. Then QD-labeled AMO (QD-AMO) was incubated with the DNA aptamer to form QD-AMO-aptamer duplex. When the target organophosphorus pesticides were added, they could specifically bind the DNA aptamer, leading to the cleavage of QD-AMO-aptamer duplex, accompany with the release of QD-AMO. As a result, the ratio of peak height between QD-AMO and QD-AMO-aptamer duplex changed in the detection process of CE-LIF. This strategy was subsequently applied for the detection of phorate, profenofos, isocarbophos, and omethoate with the detection limits of 0.20, 0.10, 0.17, and 0.23μM, respectively. This is the first report about using QDs as the signal indicators for organophosphorus pesticides detection based on broad-specificity DNA aptamers by CE-LIF, thus contributing to extend the scope of application of QDs in different fields. The proposed method has great potential to be a universal strategy for rapid detection of aptamer-specific small molecule targets by simply changing the types of aptamer sequences. Copyright © 2015 Elsevier B.V. All rights reserved.
Biosensing with Luminescent Semiconductor Quantum Dots
Directory of Open Access Journals (Sweden)
Hedi Mattoussi
2006-08-01
Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.
International Nuclear Information System (INIS)
Afsaneh, E.; Yavari, H.
2014-01-01
The superconducting reservoir effect on the current carrying transport of a double quantum dot in Markovian regime is investigated. For this purpose, a quantum master equation at finite temperature is derived for the many-body density matrix of an open quantum system. The dynamics and the steady-state properties of the double quantum dot system for arbitrary bias are studied. We will show that how the populations and coherencies of the system states are affected by superconducting leads. The energy parameter of system contains essentially four contributions due to dots system-electrodes coupling, intra dot coupling, two quantum dots inter coupling and superconducting gap. The coupling effect of each energy contribution is applied to currents and coherencies results. In addition, the effect of energy gap is studied by considering the amplitude and lifetime of coherencies to get more current through the system. (author)
Thermoelectric transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Merker, Lukas Heinrich
2016-06-30
In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum
The electronic properties of semiconductor quantum dots
International Nuclear Information System (INIS)
Barker, J.A.
2000-10-01
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state
Energy Technology Data Exchange (ETDEWEB)
Fan, Yao; Liu, Li; Sun, Donglei; Lan, Hanyue [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); Fu, Haiyan, E-mail: fuhaiyan@mail.scuec.edu.cn [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); Yang, Tianming, E-mail: tmyang@mail.scuec.edu.cn [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); She, Yuanbin, E-mail: sheyb@zjut.edu.cn [State Key Laboratory Breeding Base of Green Chemistry-Synthesis Technology, College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310032 (China); Ni, Chuang [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China)
2016-04-15
As a popular detection model, the fluorescence “turn-off” sensor based on quantum dots (QDs) has already been successfully employed in the detections of many materials, especially in the researches on the interactions between pesticides. However, the previous studies are mainly focused on simple single track or the comparison based on similar concentration of drugs. In this work, a new detection method based on the fluorescence “turn-off” model with water-soluble ZnCdSe and CdSe QDs simultaneously as the fluorescent probes is established to detect various pesticides. The fluorescence of the two QDs can be quenched by different pesticides with varying degrees, which leads to the differences in positions and intensities of two peaks. By combining with chemometrics methods, all the pesticides can be qualitative and quantitative respectively even in real samples with the limit of detection was 2 × 10{sup −8} mol L{sup −1} and a recognition rate of 100%. This work is, to the best of our knowledge, the first report on the detection of pesticides based on the fluorescence quenching phenomenon of double quantum dots combined with chemometrics methods. What's more, the excellent selectivity of the system has been verified in different mediums such as mixed ion disruption, waste water, tea and water extraction liquid drugs. - Highlights: • A new model based on double QDs is established for pesticide residues detection. • The fluorescent data array sensor is coupled with chmometrics methods. • The sensor can be highly sensitive and selective detection in actual samples.
Ultrafast optical control of individual quantum dot spin qubits
International Nuclear Information System (INIS)
De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa
2013-01-01
Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a ‘flying’ photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin–spin entanglement can be generated if each spin can emit a photon that is
International Nuclear Information System (INIS)
Shen Jianqi; Zeng Ruixi
2017-01-01
Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates. (author)
Quantum Dots in Vertical Nanowire Devices
Van Weert, M.
2010-01-01
The research described in this thesis is aimed at constructing a quantum interface between a single electron spin and a photon, using a nanowire quantum dot. Such a quantum interface enables information transfer from a local electron spin to the polarization of a photon for long distance readout.
Edge channel confinement in a bilayer graphene n–p–n quantum dot
Overweg, Hiske; Rickhaus, Peter; Eich, Marius; Lee, Yongjin; Pisoni, Riccardo; Watanabe, Kenji; Taniguchi, Takashi; Ihn, Thomas; Ensslin, Klaus
2018-01-01
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples n-doped reservoirs to a p-doped dot. At magnetic field values around B=2 T, Coulomb blockade is observed. This demonstrates that the coupling of the copropagating modes at the p–n interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.
Optical Fiber Sensing Using Quantum Dots
Directory of Open Access Journals (Sweden)
Faramarz Farahi
2007-12-01
Full Text Available Recent advances in the application of semiconductor nanocrystals, or quantumdots, as biochemical sensors are reviewed. Quantum dots have unique optical properties thatmake them promising alternatives to traditional dyes in many luminescence basedbioanalytical techniques. An overview of the more relevant progresses in the application ofquantum dots as biochemical probes is addressed. Special focus will be given toconfigurations where the sensing dots are incorporated in solid membranes and immobilizedin optical fibers or planar waveguide platforms.
Modelling exciton–phonon interactions in optically driven quantum dots
DEFF Research Database (Denmark)
Nazir, Ahsan; McCutcheon, Dara
2016-01-01
We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...
Optical Studies of Single Quantum Dots
National Research Council Canada - National Science Library
Gammon, Daniel; Steel, Duncan G
2002-01-01
...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...
Ge Quantum Dot Infrared Imaging Camera Project
National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...
Synthetic Developments of Nontoxic Quantum Dots.
Das, Adita; Snee, Preston T
2016-03-03
Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Submonolayer Quantum Dot Infrared Photodetector
Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang
2010-01-01
A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
Landauer current and mutual information in a bosonic quantum dot
Shashikant Sable, Hrushikesh; Singh Bhakuni, Devendra; Sharma, Auditya
2018-02-01
We study the quantum transport of bosons through a quantum dot coupled to two macroscopic heat baths L and R, held at fixed temperatures TL and TR respectively. We manage to cast the particle as well as the heat current into the Landauer form. Following the correlation matrix approach, we compute the time-dependent mutual information of the dot with the baths. We find that mutual information goes logarithmically as the number of bosons, and at low temperatures, it is possible to set up the parameters in such a way that in steady-state, the mutual information goes quadratically as a function of current.
International Nuclear Information System (INIS)
Min, Shixiong; Hou, Jianhua; Lei, Yonggang; Ma, Xiaohua; Lu, Gongxuan
2017-01-01
Highlights: • TiO 2 /GQDs composites were prepared by a facile one-step hydrothermal method. • GQDs were strongly coupled onto the surface of TiO 2 nanoparticles by this method. • The TiO 2 /GQDs showed enhanced light absorption and charge separation efficiency. • The TiO 2 /GQDs exhibited higher photocatalytic H 2 evolution activity than pure TiO 2 . • GQDs play synergistic roles by acting as both photosensitizer and electron acceptor. - Abstract: The coupling of semiconductor photocatalysts with graphene quantum dots (GQDs) has been proven to be an effective strategy to enhance the photocatalytic and photoelectrical conversion performances of the resulted composites; however, the preparation of semiconductor/GQDs composites usually involves several time-inefficient and tedious post-treatment steps. Herein, we present a facile one-step hydrothermal route for the preparation of GQDs coupled TiO 2 (TiO 2 /GQDs) photocatalysts using 1,3,6-trinitropyrene (TNP) as the sole precursor of GQDs. During the hydrothermal process, TNP molecules undergo an intramolecular fusion to form GQDs, which simultaneously decorate on the surface of TiO 2 nanoparticles, leading to a strong surface interaction between the two components. The effective coupling of GQDs on TiO 2 can effectively extend the light absorption of the TiO 2 to visible region and enhance the charge separation efficiency of TiO 2 /GQDs composites as a result of GQDs acting as a photosensitizer and an excellent electron acceptor. These key advances make the TiO 2 /GQDs photocatalyst highly active towards the H 2 evolution reaction, resulting in 7 and 3 times higher H 2 evolution rate and photocurrent response at optimal GQDs content than TiO 2 alone, respectively. This study provides a new methodology for the development of high-performance GQDs modified semiconductor photocatalysts for energy conversion applications.
Electron Spin Dynamics in Semiconductor Quantum Dots
International Nuclear Information System (INIS)
Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.
2011-01-01
An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.
Positioning of quantum dots on metallic nanostructures
Kramer, R. K.; Pholchai, N.; Sorger, V. J.; Yim, T. J.; Oulton, R.; Zhang, X.
2010-04-01
The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm)2 using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.
Positioning of quantum dots on metallic nanostructures
Energy Technology Data Exchange (ETDEWEB)
Kramer, R K; Pholchai, N; Sorger, V J; Yim, T J; Oulton, R; Zhang, X, E-mail: xiang@berkeley.edu [NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA (United States)
2010-04-09
The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm){sup 2} using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.
Valley-orbit hybrid states in Si quantum dots
Gamble, John; Friesen, Mark; Coppersmith, S. N.
2013-03-01
The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).
QCAD simulation and optimization of semiconductor double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
Influence of quasibound states on the carrier capture in quantum dots
DEFF Research Database (Denmark)
Magnúsdóttir, Ingibjörg; Uskov, A.V.; Ferreira, R.
2002-01-01
The interaction of carriers in quantum-dot quasibound states with longitudinal optical phonons is investigated. For a level separation between the quasibound state and a discrete quantum-dot state in the vicinity of the phonon energy, a strong electron-phonon coupling occurs. A mixed electron-pho...
DEFF Research Database (Denmark)
Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, P.
2012-01-01
We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially when the quantum dot and cavity are tuned out of resonance...
Spectroscopy characterization and quantum yield determination of quantum dots
International Nuclear Information System (INIS)
Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R
2016-01-01
In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)
Advancements in the Field of Quantum Dots
Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.
2012-08-01
Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.
Quantum-dot-in-perovskite solids
Ning, Zhijun
2015-07-15
© 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Zamani, A.; Setareh, F.; Azargoshasb, T.; Niknam, E.; Mohammadhosseini, E.
2017-06-01
In this article the spin of electron as well as simultaneous effects of Rashba and Dresselhaus spin-orbit interactions are considered for a lens-shaped GaAs quantum dot and the influences of applied electric field and Zeeman effect on the electromagnetically induced transparency (EIT) of this system are investigated. To do so, the absorption, refractive index as well as the group velocity of the probe light pulse are presented and discussed. Study of the absorption and refractive index reveals that, at a particular frequency of probe field, absorption diminishes, refractive index becomes unity and so the EIT occurs. Furthermore, the investigation of group velocity show that, around such frequency the probe propagation is sub-luminal, which shifts to super-luminal for higher and lower frequencies. Our results illustrate that the EIT frequency, transparency window and sub(super)-luminal frequency intervals are strongly sensitive to applied fields in the presence of spin-orbit couplings. It is found that, in comparison with the investigations with negligence of spin, the EIT behavior under the effects of applied fields are quite different.
Usman, Muhammad
2015-10-21
Strongly-coupled quantum dot molecules (QDMs) are widely employed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of the electronic and optical properties of the underlying QDMs. The application of electric fields offers a way to realise such a control over the QDM characteristics for a desired device operation. We performed multi-million-atom atomistic tight-binding calculations to study the influence of electric fields on the electron and hole wave function confinements and symmetries, the ground-state transition energies, the band-gap wavelengths, and the optical transition modes. Electrical fields parallel (Ep) and anti-parallel (Ea) to the growth direction were investigated to provide a comprehensive guide for understanding the electric field effects. The strain-induced asymmetry of the hybridized electron states is found to be weak and can be balanced by applying a small Ea electric field, of the order of 1 kV cm(-1). The strong interdot couplings completely break down at large electric fields, leading to single QD states confined at the opposite edges of the QDM. This mimics a transformation from a type-I band structure to a type-II band structure for the QDMs, which is a critical requirement for the design of intermediate-band solar cells (IBSCs). The analysis of the field-dependent ground-state transition energies reveals that the QDM can be operated both as a high dipole moment device by applying large electric fields and as a high polarizability device under the application of small electric field magnitudes. The quantum confined Stark effect (QCSE) red shifts the band-gap wavelength to 1.3 μm at the 15 kV cm(-1) electric field; however the reduced electron-hole wave function overlaps lead to a decrease in the interband optical transition strengths by roughly three orders of magnitude. The study of the polarisation-resolved optical
Electron Spins in Semiconductor Quantum Dots
Hanson, R.
2005-01-01
This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic
A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
DEFF Research Database (Denmark)
Hu, Yongjie; Churchill, Hugh; Reilly, David
2007-01-01
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation......: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots...... and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin...
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
International Nuclear Information System (INIS)
Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
2015-01-01
Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)
Quantum Dot Nanobioelectronics and Selective Antimicrobial Redox Interventions
Goodman, Samuel Martin
The unique properties of nanomaterials have engendered a great deal of interest in applying them for applications ranging from solid state physics to bio-imaging. One class of nanomaterials, known collectively as quantum dots, are defined as semiconducting crystals which have a characteristic dimension smaller than the excitonic radius of the bulk material which leads to quantum confinement effects. In this size regime, excited charge carriers behave like prototypical particles in a box, with their energy levels defined by the dimensions of the constituent particle. This is the source of the tunable optical properties which have drawn a great deal of attention with regards to finding appropriate applications for these materials. This dissertation is divided into multiple sections grouped by the type of application explored. The first sectoin investigates the energetic interactions of physically-coupled quantum dots and DNA, with the goal of gaining insight into how self-assembled molecular wires can bridge the energetic states of physically separated nanocrystals. Chapter 1 begins with an introduction to the properties of quantum dots, the conductive properties of DNA, and the common characterization methods used to characterize materials on the nanoscale. In Chapter 2 scanning tunneling measurements of QD-DNA constructs on the single particle level are presented which show the tunable coupling between the two materials and their resulting hybrid electronic structure. This is expanded upon in Chapter 3 where the conduction of photogenerated charges in QD-DNA hybrid thin films are characterized, which exhibit different charge transfer pathways through the constituent nucleobases depending on the energy of the incident light and resulting electrons. Complementary investigations of energy transfer mediated through DNA are presented in Chapter 4, with confirmation of Dexter-like transfer being facilitated through the oligonucleotides. The second section quantifies the
Fano interferences in the transport properties of triple quantum dot T-shaped systems
International Nuclear Information System (INIS)
Tifrea, I; Crisan, M; Grosu, I
2009-01-01
We consider the transport and the noise characteristic in the case of a triple quantum dots T-shaped system where two of the dots form a two-level system and the other works in a detector-like setup. Our theoretical results are obtained using the equation of motion method for the case of zero on-site Coulomb interaction in the detector dot. The transport trough the T-shaped system can be controlled by varying the coupling between the two-level system dots or the coupling between the detector dot and the exterior electrodes. The Fano dips in the system's conductance can be observe both for strong (fast detector) and weak coupling (slow detector) between the detector dot and the external electrodes. Due to stronger electronic correlations the noise in the case of a slow detector are much higher. This setup may be of interest for the practical realization of qubit states in quantum dots systems.
Quantum computation with two-dimensional graphene quantum dots
International Nuclear Information System (INIS)
Li Jie-Sen; Li Zhi-Bing; Yao Dao-Xin
2012-01-01
We study an array of graphene nano sheets that form a two-dimensional S = 1/2 Kagome spin lattice used for quantum computation. The edge states of the graphene nano sheets are used to form quantum dots to confine electrons and perform the computation. We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots. It is shown that both schemes contain a great amount of information for quantum computation. The corresponding gate operations are also proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.
Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G
2018-04-23
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.
Quantum Dot Systems: a versatile platform for quantum simulations
International Nuclear Information System (INIS)
Barthelemy, Pierre; Vandersypen, Lieven M.K.
2013-01-01
Quantum mechanics often results in extremely complex phenomena, especially when the quantum system under consideration is composed of many interacting particles. The states of these many-body systems live in a space so large that classical numerical calculations cannot compute them. Quantum simulations can be used to overcome this problem: complex quantum problems can be solved by studying experimentally an artificial quantum system operated to simulate the desired hamiltonian. Quantum dot systems have shown to be widely tunable quantum systems, that can be efficiently controlled electrically. This tunability and the versatility of their design makes them very promising quantum simulators. This paper reviews the progress towards digital quantum simulations with individually controlled quantum dots, as well as the analog quantum simulations that have been performed with these systems. The possibility to use large arrays of quantum dots to simulate the low-temperature Hubbard model is also discussed. The main issues along that path are presented and new ideas to overcome them are proposed. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Inorganic passivation and doping control in colloidal quantum dot photovoltaics
Hoogland, Sjoerd H.
2012-01-01
We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.
Surface treatment of nanocrystal quantum dots after film deposition
Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro
2015-02-03
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
Fine structure of an exciton coupled to a single Fe2 + ion in a CdSe/ZnSe quantum dot
Smoleński, T.; Kazimierczuk, T.; Goryca, M.; Pacuski, W.; Kossacki, P.
2017-10-01
We present a polarization-resolved photoluminescence study of the exchange interaction effects in a prototype system consisting of an individual Fe2 + ion and a single neutral exciton confined in a CdSe/ZnSe quantum dot. A maximal possible number of eight fully linearly polarized lines in the bright exciton emission spectrum is observed, evidencing complete degeneracy lifting in the investigated system. We discuss the conditions required for such a scenario to take place: anisotropy of the electron-hole interaction and the zero-field splitting of the Fe2 + ion spin states. Neglecting either of these components is shown to restore partial degeneracy of the transitions, making the excitonic spectrum similar to those previously reported for all other systems of quantum dots with single magnetic dopants.
Quantum description of nuclear spin cooling in a quantum dot
Energy Technology Data Exchange (ETDEWEB)
Giedke, Geza; Christ, H.; Cirac, I. [Max-Planck-Institut fuer Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany)
2007-07-01
We study theoretically the cooling of an ensemble of nuclear spins coupled to the spin of a localized electron in a quantum dot. We obtain a master equation for the state of the nuclear spins interacting with a sequence of polarized electrons that allows to study quantitatively the cooling process including the effect of nuclear spin coherences, which can lead to 'dark states' of the nuclear system in which further cooling is inhibited. We show that the inhomogeneous Knight field mitigates this effect strongly and that the remaining dark state limitations can be overcome by very few shifts of the electron wave function, allowing for cooling far beyond the dark state limit. Numerical integration of the master equation indicates that polarizations larger than 90% can be achieved within a millisecond timescale.
Energy Technology Data Exchange (ETDEWEB)
Min, Shixiong, E-mail: sxmin@nun.edu.cn [School of Chemistry and Chemical Engineering, Beifang University of Nationalities, Yinchuan, 750021, Ningxia Province (China); Hou, Jianhua; Lei, Yonggang; Ma, Xiaohua [School of Chemistry and Chemical Engineering, Beifang University of Nationalities, Yinchuan, 750021, Ningxia Province (China); Lu, Gongxuan [State Key Laboratory for Oxo Synthesis and Selective Oxidation, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)
2017-02-28
Highlights: • TiO{sub 2}/GQDs composites were prepared by a facile one-step hydrothermal method. • GQDs were strongly coupled onto the surface of TiO{sub 2} nanoparticles by this method. • The TiO{sub 2}/GQDs showed enhanced light absorption and charge separation efficiency. • The TiO{sub 2}/GQDs exhibited higher photocatalytic H{sub 2} evolution activity than pure TiO{sub 2}. • GQDs play synergistic roles by acting as both photosensitizer and electron acceptor. - Abstract: The coupling of semiconductor photocatalysts with graphene quantum dots (GQDs) has been proven to be an effective strategy to enhance the photocatalytic and photoelectrical conversion performances of the resulted composites; however, the preparation of semiconductor/GQDs composites usually involves several time-inefficient and tedious post-treatment steps. Herein, we present a facile one-step hydrothermal route for the preparation of GQDs coupled TiO{sub 2} (TiO{sub 2}/GQDs) photocatalysts using 1,3,6-trinitropyrene (TNP) as the sole precursor of GQDs. During the hydrothermal process, TNP molecules undergo an intramolecular fusion to form GQDs, which simultaneously decorate on the surface of TiO{sub 2} nanoparticles, leading to a strong surface interaction between the two components. The effective coupling of GQDs on TiO{sub 2} can effectively extend the light absorption of the TiO{sub 2} to visible region and enhance the charge separation efficiency of TiO{sub 2}/GQDs composites as a result of GQDs acting as a photosensitizer and an excellent electron acceptor. These key advances make the TiO{sub 2}/GQDs photocatalyst highly active towards the H{sub 2} evolution reaction, resulting in 7 and 3 times higher H{sub 2} evolution rate and photocurrent response at optimal GQDs content than TiO{sub 2} alone, respectively. This study provides a new methodology for the development of high-performance GQDs modified semiconductor photocatalysts for energy conversion applications.
Coherence and dephasing in self-assembled quantum dots
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan
2003-01-01
We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....
Carbon quantum dots and a method of making the same
Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.
2017-08-22
The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.
Sharma, Nandlal; Reuter, Dirk
2017-11-01
Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.
Quantum computation: algorithms and implementation in quantum dot devices
Gamble, John King
In this thesis, we explore several aspects of both the software and hardware of quantum computation. First, we examine the computational power of multi-particle quantum random walks in terms of distinguishing mathematical graphs. We study both interacting and non-interacting multi-particle walks on strongly regular graphs, proving some limitations on distinguishing powers and presenting extensive numerical evidence indicative of interactions providing more distinguishing power. We then study the recently proposed adiabatic quantum algorithm for Google PageRank, and show that it exhibits power-law scaling for realistic WWW-like graphs. Turning to hardware, we next analyze the thermal physics of two nearby 2D electron gas (2DEG), and show that an analogue of the Coulomb drag effect exists for heat transfer. In some distance and temperature, this heat transfer is more significant than phonon dissipation channels. After that, we study the dephasing of two-electron states in a single silicon quantum dot. Specifically, we consider dephasing due to the electron-phonon coupling and charge noise, separately treating orbital and valley excitations. In an ideal system, dephasing due to charge noise is strongly suppressed due to a vanishing dipole moment. However, introduction of disorder or anharmonicity leads to large effective dipole moments, and hence possibly strong dephasing. Building on this work, we next consider more realistic systems, including structural disorder systems. We present experiment and theory, which demonstrate energy levels that vary with quantum dot translation, implying a structurally disordered system. Finally, we turn to the issues of valley mixing and valley-orbit hybridization, which occurs due to atomic-scale disorder at quantum well interfaces. We develop a new theoretical approach to study these effects, which we name the disorder-expansion technique. We demonstrate that this method successfully reproduces atomistic tight-binding techniques
Energy Technology Data Exchange (ETDEWEB)
Weber, Carsten
2008-07-01
This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and
Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry
Lüker, S.; Kuhn, T.; Reiter, D. E.
2017-12-01
Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.
Bright infrared LEDs based on colloidal quantum-dots
Sun, Liangfeng
2013-01-01
Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.
Imaging vasculature and lymphatic flow in mice using quantum dots
DEFF Research Database (Denmark)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan
2009-01-01
Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...... methods for use with commercially available quantum dots and discuss common difficulties....
High resolution STEM of quantum dots and quantum wires
DEFF Research Database (Denmark)
Kadkhodazadeh, Shima
2013-01-01
This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...
THz quantum-confined Stark effect in semiconductor quantum dots
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.
2012-01-01
We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...
Some aspects of quantum dot toxicity.
Bottrill, Melanie; Green, Mark
2011-07-07
Quantum dot toxicity has become a hot topic in recent years due to the emergence of semiconductor nanoparticles as highly efficient biological imaging agents. The use of quantum dots in biology is arguably the most successful application of pure nanotechnology in recent times, although unfortunately, the most useful semiconductor particles contain elements that are often thought to be detrimental to health and the environment. In this article, we explore some key reports on this issue. This journal is © The Royal Society of Chemistry 2011
Hu, Ou; Xu, Lu; Fu, Haiyan; Yang, Tianming; Fan, Yao; Lan, Wei; Tang, Hebing; Wu, Yu; Ma, Lixia; Wu, Di; Wang, Yuan; Xiao, Zuobing; She, Yuanbin
2018-05-30
Fluorescent "turn-off" sensors based on double quantum dots (QDs) has attracted increasing attention in the detection of many materials due to their properties such as more useful information, higher fluorescence efficiency and stability compared with the fluorescent "turn-off" sensors based on single QDs. In this work, highly sensitive and specific method for recognition of 53 different famous green teas was developed based on the fluorescent "turn-off" model with water-soluble ZnCdSe-CdTe double QDs. The fluorescence of the two QDs can be quenched by different teas with varying degrees, which results in the differences in positions and intensities of two peaks. By the combination of classic partial least square discriminant analysis (PLSDA), all the green teas can be discriminated with high sensitivity, specificity and a satisfactory recognition rate of 100% for training set and 100% for prediction set, respectively. The fluorescent "turn-off" sensors based on the single QDs (either ZnCdSe QDs or CdTe QDs) coupled with PLSDA were also employed to recognize the 53 famous green teas with unsatisfactory results. Therefore, the fluorescent "turn-off" sensors based on the double QDs is more appropriate for the large-class-number classification (LCNC) of green teas. Herein, we have demonstrated, for the first time, that so many kinds of famous green teas can be discriminated by the "turn-off" model of double QDs combined with chemometrics, which has largely extended the capability of traditional fluorescence and chemometrics, as well as exhibits great potential to perform LCNC in other practical applications. Copyright © 2018 Elsevier B.V. All rights reserved.
PREFACE: Quantum dots as probes in biology
Cieplak, Marek
2013-05-01
photosynthetic systems. The next paper, by Olejnik et al, discussed metallic QDs which enhance photosynthetic function in light-harvesting biomolecular complexes. Such hybrid structures with gold QDs are shown to exhibit a strong increase in the fluorescence quantum yield. The next two papers, by Sikora et al and Kaminska et al deal with the ZnO nanoparticles passivated by MgO. In the first of these two papers, the authors describe the behavior of ZnO/MgO when introduced to human cancer cells. In the second, the authors describe the QDs with an extra outer layer of Fe2O3 which makes the nanoparticles superparamagnetic and also capable of generation of reactive oxygen species which could be applied to form localized centers of toxicity for cancer treatment. Finally, in the last paper by Yatsunenko et al, the authors discuss several semiconducting QDs like ZnO with various rare-earth dopands. They propose a microwave-driven hydrothermal technology to make them, characterize their luminescence and demonstrate their usefulness in the early recognition of cancer tissues. Quantum dots as probes in biology contents Quantum dots as probes in biologyMarek Cieplak Luminescent nanoparticles and their applications in the life sciencesVarun K A Sreenivasan, Andrei V Zvyagin and Ewa M Goldys Ferredoxin:NADP+ oxidoreductase in junction with CdSe/ZnS quantum dots: characteristics of an enzymatically active nanohybrid Krzysztof Szczepaniak, Remigiusz Worch and Joanna Grzyb Spectroscopic studies of plasmon coupling between photosynthetic complexes and metallic quantum dotsMaria Olejnik, Bartosz Krajnik, Dorota Kowalska, Guanhua Lin and Sebastian Mackowski Luminescence of colloidal ZnO nanoparticles synthesized in alcohols and biological application of ZnO passivated by MgOBożena Sikora, Krzysztof Fronc, Izabela Kamińska, Kamil Koper, Piotr Stępień and Danek Elbaum Novel ZnO/MgO/Fe2O3 composite optomagnetic nanoparticles I Kamińska, B Sikora, K Fronc, P Dziawa, K Sobczak, R Minikayev, W
Menendez-Miranda, Mario; Fernandez-Arguelles, Maria T; Costa-Fernandez, Jose M; Encinar, Jorge Ruiz; Sanz-Medel, Alfredo
2014-08-11
Separation and identification of nanoparticles of different composition, with similar particle diameter, coexisting in heterogeneous suspensions of polymer-coated CdSe/ZnS quantum dots (QDs) have been thoroughly assessed by asymmetric flow field-flow fractionation (AF4) coupled on-line to fluorescence and inductively coupled plasma mass spectrometry (ICPMS) detectors. Chemical characterization of any previously on-line separated nanosized species was achieved by the measurement of the elemental molar ratios of every element involved in the synthesis of the QDs, using inorganic standards and external calibration by flow injection analysis (FIA). Such elemental molar ratios, strongly limited so far to pure single nanoparticles suspensions, have been achieved with adequate accuracy by coupling for the first time an ICP-QQQ instrument to an AF4 system. This hyphenation turned out to be instrumental to assess the chemical composition of the different populations of nanoparticles coexisting in the relatively complex mixtures, due to its capabilities to detect the hardly detectable elements involved in the synthesis. Interestingly such information, complementary to that obtained by fluorescence, was very valuable to detect and identify unexpected nanosized species, present at significant level, produced during QDs synthesis and hardly detectable by standard approaches. Copyright © 2014. Published by Elsevier B.V.
Open quantum dots: Physics of the non-Hermitian Hamiltonian
Energy Technology Data Exchange (ETDEWEB)
Ferry, D.K.; Akis, R. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe AZ 85287-5706 (United States); Burke, A.M. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe AZ 85287-5706 (United States); School of Physics, The University of New South Wales, Sydney (Australia); Knezevic, I. [Department of Electrical Engineering, University of Wisconsin, Madison WI 53706 (United States); Brunner, R.; Meisels, R.; Kuchar, F. [Institut fuer Physik, Montanuniversitaet Leoben, 8700 Leoben (Austria); Bird, J.P.; Bird, J.P. [Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260 (United States)
2013-02-15
Quantum dots provide a natural system in which to study both classical and quantum features of transport, as they possess a very rich set of eigenstates.When coupled to the environment through a pair of quantum point contacts, these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. In this latter case, many of the eigenstates are decohered through interaction with the environment, but many survive and are referred to as the set of pointer states. These latter states are described by a projected, non-Hermitian Hamiltonian which describes their dissipation through many-body interactions with particles in the external environment. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Bloch-wave engineering of quantum dot-micropillars for cavity quantum electrodynamics experiments
DEFF Research Database (Denmark)
Lermer, Matthias; Gregersen, Niels; Dunzer, Florian
2012-01-01
scattering loss leads to record-high visibility of the strong coupling in MPs with modest oscillator strength quantum dots. A quality factor of 13,600 and a Rabi splitting of 85 \\mueV with an estimated visibility v of 0.38 are observed for a small mode volume MP with a diameter dc of 850 nm....
Dynamic localization in quantum dots: Analytical theory
International Nuclear Information System (INIS)
Basko, D.M.; Skvortsov, M.A.; Kravtsov, V.E.
2003-02-01
We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation φ(t). Assuming the dot to be described by random matrix theory for GOE we find the quantum correction to the energy absorption rate as a function of the dephasing time t φ . If φ(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that to the conductivity δσ d (t φ ) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation the leading quantum correction is absent as in the systems of the unitary symmetry class, unless φ(-t+τ)=φ(t+τ) for some τ, which falls into the quasi-1d orthogonal universality class. (author)
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.
2017-08-01
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.
Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K
2017-08-02
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Photoluminescence studies of single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher
1999-01-01
Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....
Dephasing and hyperfine interaction in carbon nanotubes double quantum dots
DEFF Research Database (Denmark)
Reynoso, Andres Alejandro; Flensberg, Karsten
2012-01-01
We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....
Probing the energy reactance with adiabatically driven quantum dots
Ludovico, María Florencia; Arrachea, Liliana; Moskalets, Michael; Sánchez, David
2018-02-01
The tunneling Hamiltonian describes a particle transfer from one region to another. Although there is no particle storage in the tunneling region itself, it has an associated amount of energy. The corresponding energy flux was named reactance since, such as an electrical reactance, it manifests itself in time-dependent transport only. We show here that the existence of the energy reactance leads to the universal response of a mesoscopic thermometer, a floating contact coupled to an adiabatically driven quantum dot.
Higher-order spin and charge dynamics in a quantum dot-lead hybrid system.
Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Stano, Peter; Noiri, Akito; Ito, Takumi; Loss, Daniel; Ludwig, Arne; Wieck, Andreas D; Tarucha, Seigo
2017-09-22
Understanding the dynamics of open quantum systems is important and challenging in basic physics and applications for quantum devices and quantum computing. Semiconductor quantum dots offer a good platform to explore the physics of open quantum systems because we can tune parameters including the coupling to the environment or leads. Here, we apply the fast single-shot measurement techniques from spin qubit experiments to explore the spin and charge dynamics due to tunnel coupling to a lead in a quantum dot-lead hybrid system. We experimentally observe both spin and charge time evolution via first- and second-order tunneling processes, and reveal the dynamics of the spin-flip through the intermediate state. These results enable and stimulate the exploration of spin dynamics in dot-lead hybrid systems, and may offer useful resources for spin manipulation and simulation of open quantum systems.
Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.
Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin
2017-06-27
Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.
System and method for making quantum dots
Bakr, Osman M.
2015-05-28
Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
New small quantum dots for neuroscience
Selvin, Paul
2014-03-01
In "New Small Quantum Dots for Neuroscience," Paul Selvin (University of Illinois, Urbana-Champaign) notes how the details of synapsis activity in the brain involves chemical receptors that facilitate the creation of the electrical connection between two nerves. In order to understand the details of this neuroscience phenomenon you need to be able to "see" what is happening at the scale of these receptors, which is around 10 nanometers. This is smaller than the diffraction limit of normal microscopy and it takes place on a 3 dimensional structure. Selvin describes the development of small quantum dots (on the order of 6-9 microns) that are surface-sensitized to interact with the receptors. This allows the application of photo-activated localized microscopy (PALM), a superresolution microscopy that can be scanned through focus to develop a 3D map on a scale that is the same size as the emitter, which in this case are the small quantum dots. The quantum dots are stable in time and provide access to the receptors which allows the imaging of the interactions taking place at the synoptic level.
Quantum Dot Detectors with Plasmonic Structures
2015-05-15
high operating temperature quantum dots in a well photodetectors,” Appl. Phys. Lett. 97(6), 061105 (2010). 18. J. D. Jackson, Classical ... Electrodynamics (Wiley, New York, 3rd Edition, 1999). Approved for Public Release; Distribution is Unlimited. 10 19. J. O. Kim, S. Sengupta, A. V. Barve, Y. D
Photoluminescence of hybrid quantum dot systems
Czech Academy of Sciences Publication Activity Database
Král, Karel; Menšík, Miroslav
2015-01-01
Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism
Decoherence in Nearly-Isolated Quantum Dots
DEFF Research Database (Denmark)
Folk, J.; M. Marcus, C.; Harris jr, J.
2000-01-01
Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...
Many electron effects in semiconductor quantum dots
Indian Academy of Sciences (India)
Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...
Effect of temperature on quantum dots
Indian Academy of Sciences (India)
MAHDI AHMADI BORJI
2017-07-12
Jul 12, 2017 ... Quantum dot semiconductor lasers, due to the discrete density of states, low threshold current and ... energy states, strain, and other physical features, and their change by varying some factors such as ... tion 2 explains the model and method of the numerical simulation. Our results and discussions on the ...
Competing interactions in semiconductor quantum dots
van den Berg, R.; Brandino, G.P.; El Araby, O.; Konik, R.M.; Gritsev, V.; Caux, J.S.
2014-01-01
We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free-induction decay and spin-echo simulations
Magnetic quantum dots for multimodal imaging
Koole, Rolf; Mulder, Willem J. M.; van Schooneveld, Matti M.; Strijkers, Gustav J.; Meijerink, Andries; Nicolay, Klaas
2009-01-01
Multimodal contrast agents based on highly luminescent quantum dots (QDs) combined with magnetic nanoparticles (MNPs) or ions form an exciting class of new materials for bioimaging. With two functionalities integrated in a single nanoparticle, a sensitive contrast agent for two very powerful and
Effect of temperature on quantum dots
Indian Academy of Sciences (India)
MAHDI AHMADI BORJI
2017-07-12
Jul 12, 2017 ... Abstract. In this paper, the strain, band-edge, and energy levels of pyramidal InxGa1−xAs/GaAs quantum dots are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates ...
Classical behavior of few-electron parabolic quantum dots
International Nuclear Information System (INIS)
Ciftja, O.
2009-01-01
Quantum dots are intricate and fascinating systems to study novel phenomena of great theoretical and practical interest because low dimensionality coupled with the interplay between strong correlations, quantum confinement and magnetic field creates unique conditions for emergence of fundamentally new physics. In this work we consider two-dimensional semiconductor quantum dot systems consisting of few interacting electrons confined in an isotropic parabolic potential. We study the many-electron quantum ground state properties of such systems in presence of a perpendicular magnetic field as the number of electrons is varied using exact numerical diagonalizations and other approaches. The results derived from the calculations of the quantum model are then compared to corresponding results for a classical model of parabolically confined point charges who interact with a Coulomb potential. We find that, for a wide range of parameters and magnetic fields considered in this work, the quantum ground state energy is very close to the classical energy of the most stable classical configuration under the condition that the classical energy is properly adjusted to incorporate the quantum zero point motion.
Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide.
Thyrrestrup, Henri; Kiršanskė, Gabija; Le Jeannic, Hanna; Pregnolato, Tommaso; Zhai, Liang; Raahauge, Laust; Midolo, Leonardo; Rotenberg, Nir; Javadi, Alisa; Schott, Rüdiger; Wieck, Andreas D; Ludwig, Arne; Löbl, Matthias C; Söllner, Immo; Warburton, Richard J; Lodahl, Peter
2018-03-14
Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise are of importance, and the influence of photonic nanostructures on the broadening has not been clarified. We present near-lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of 66 ± 4%, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out; i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.
Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide
Thyrrestrup, Henri; Kiršanskė, Gabija; Le Jeannic, Hanna; Pregnolato, Tommaso; Zhai, Liang; Raahauge, Laust; Midolo, Leonardo; Rotenberg, Nir; Javadi, Alisa; Schott, Rüdiger; Wieck, Andreas D.; Ludwig, Arne; Löbl, Matthias C.; Söllner, Immo; Warburton, Richard J.; Lodahl, Peter
2018-03-01
Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise is of importance and the influence of photonic nanostructures on the broadening has not been clarified. We present near lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of $66 \\pm 4 \\%$, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically-contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out, i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.
Efficient Luminescence from Perovskite Quantum Dot Solids
Kim, Younghoon
2015-11-18
© 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.
A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.
Hu, Yongjie; Churchill, Hugh O H; Reilly, David J; Xiang, Jie; Lieber, Charles M; Marcus, Charles M
2007-10-01
One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.
Tunneling-induced self-energy shift of energy levels of a quantum dot
International Nuclear Information System (INIS)
Gainutdinov, R Kh; Khamadeev, M A; Mohebbifar, M R; Mutygullina, A A
2015-01-01
The self-interaction of a quantum dot tunnel with Coulomb interaction coupled to two noninteracting leads is investigated. The self-energy function describing this interaction is added to a bare energy of a dot state. In the standard way of determining the self-interaction (tunneling-induced) corrections to bare energies of emitters (atoms, quantum dots, etc) the variations of the self-energy functions with energy are ignored, and these corrections are considered to be equal to the values of the self-energy functions for bare energies of states. We show that actually in the case of quantum dots the variations of the self-energy functions in the energy interval between the bare and true energies can be strong, and this can have a significant effect on the values of the tunneling-induced shifts of energy levels of quantum dots. (paper)
Energy Technology Data Exchange (ETDEWEB)
Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel
2017-07-01
We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...
Electron Transport in Quantum Dots Defined in Low-Dimensional Semiconductor Structures
Larsson, Marcus
2011-01-01
This thesis focuses on electron transport in single and double quantum dots defined in low-dimensional, narrow-band-gap III-V semiconductor materials. Fabrication schemes are presented for defining single and double quantum dots in lateral InGaAs/InP heterostructures, either by a combination of etching and local gating or solely by local top gating. The quantum dots are here electrostatically confined in at least one dimension. This allows for insitu control of the tunnel coupling of the quan...
Fano effect and Andreev bound states in T-shape double quantum dots
International Nuclear Information System (INIS)
Calle, A.M.; Pacheco, M.; Orellana, P.A.
2013-01-01
In this Letter, we investigate the transport through a T-shaped double quantum dot coupled to two normal metal leads left and right and a superconducting lead. Analytical expressions of Andreev transmission and local density of states of the system at zero temperature have been obtained. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot. We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. Our results show that as a consequence of quantum interference and proximity effect, the transmission from normal to normal lead exhibits Fano resonances due to Andreev bound states. We find that this interference effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. - Highlights: • Transport properties of a double quantum dot coupled in T-shape configuration to conducting and superconducting leads are studied. • We report Fano antiresonances in the normal transmission due to the Andreev reflections in the superconducting lead. • We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. • Fano effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. • Andreev bound states survives even for strong dot-superconductor coupling
Fan, Yao; Liu, Li; Sun, Donglei; Lan, Hanyue; Fu, Haiyan; Yang, Tianming; She, Yuanbin; Ni, Chuang
2016-04-15
As a popular detection model, the fluorescence "turn-off" sensor based on quantum dots (QDs) has already been successfully employed in the detections of many materials, especially in the researches on the interactions between pesticides. However, the previous studies are mainly focused on simple single track or the comparison based on similar concentration of drugs. In this work, a new detection method based on the fluorescence "turn-off" model with water-soluble ZnCdSe and CdSe QDs simultaneously as the fluorescent probes is established to detect various pesticides. The fluorescence of the two QDs can be quenched by different pesticides with varying degrees, which leads to the differences in positions and intensities of two peaks. By combining with chemometrics methods, all the pesticides can be qualitative and quantitative respectively even in real samples with the limit of detection was 2 × 10(-8) mol L(-1) and a recognition rate of 100%. This work is, to the best of our knowledge, the first report on the detection of pesticides based on the fluorescence quenching phenomenon of double quantum dots combined with chemometrics methods. What's more, the excellent selectivity of the system has been verified in different mediums such as mixed ion disruption, waste water, tea and water extraction liquid drugs. Copyright © 2016 Elsevier B.V. All rights reserved.
Silicon quantum dots with counted antimony donor implants
Singh, Meenakshi; Pacheco, Jose; Perry, Daniel; Wendt, Joel; Manginell, Ronald; Dominguez, Jason; Pluym, Tammy; Luhman, Dwight; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm
Antimony donor implants next to silicon quantum dots have been detected with integrated solid-state diode detectors with single ion precision. Devices with counted number of donors have been fabricated and low temperature transport measurements have been performed. Charge offsets, indicative of donor ionization and coupling to the quantum dot, have been detected in these devices. The number of offsets corresponds to 10-50% of the number of donors counted. We will report on tunneling time measurements and spin readout measurements on the donor offsets. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
Squeezed magnetobipolarons in two-dimensional quantum dot
International Nuclear Information System (INIS)
Zhang Yanmin; Wang Yunhua; Cheng Ze; Xu Qinfeng
2008-01-01
In this Letter, a different method was given for calculating the energies of the magnetobipolarons confined in a parabolic QD (quantum dot). We introduced single-mode squeezed states transformation, which are based on the Lee-Low-Pines and Huybrechts (LLP-H) canonical transformations. This method can provide results not only for the ground state energy but also for the excited states energies. Moreover, it can be applied to the entire range of the electron-phonon coupling strength. Comparing with the results of the LLP-H transformations, we have obtained more accurate results for the ground state energy, excited states energies and binding energy of the bipolarons. It shows that the magnetic field and the quantum dot can facilitate the formation of the bipolarons when η is smaller than some value
Theory of the Quantum Dot Hybrid Qubit
Friesen, Mark
2015-03-01
The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.
Single quantum dots fundamentals, applications, and new concepts
2003-01-01
This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.
Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.
Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni
2017-03-22
We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.
Semiconductor nanocrystals or quantum dots
Indian Academy of Sciences (India)
Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...
International Nuclear Information System (INIS)
Wawrzyniak, M.; Gmitra, M.; Barnas, J.
2006-01-01
Resonant tunneling through an interacting single-level quantum dot, coupled to ferromagnetic electrodes with non-collinear magnetizations has been analyzed theoretically. The dot is additionally subject to an external magnetic field. The non-equilibrium Green function technique and the equation of motion method have been applied to calculate electric current, tunnel magnetoresistance, and the average spin components in the dot. The relevant Green functions have been calculated in the Hartree-Fock approximation, and the calculations are restricted to the weak coupling regime. Numerical results are presented for a dot which is empty at equilibrium, but can be singly or doubly occupied when a bias voltage is applied
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Energy Technology Data Exchange (ETDEWEB)
Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
2016-05-16
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
International Nuclear Information System (INIS)
Betz, A. C.; Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.; Sanquer, M.; Ferguson, A. J.
2016-01-01
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
DEFF Research Database (Denmark)
Munsch, Mathieu; Malik, Nitin S.; Dupuy, Emmanuel
2013-01-01
We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the ex...
Interplay between Kondo and Majorana Interactions in Quantum Dots
Directory of Open Access Journals (Sweden)
Meng Cheng
2014-09-01
Full Text Available We study the properties of a quantum dot coupled to a topological superconductor and a normal lead and discuss the interplay between Kondo-and Majorana-induced couplings in quantum dots. The latter appears due to the presence of Majorana zero-energy modes localized, for example, at the ends of the one-dimensional superconductor. We investigate the phase diagram of the system as a function of Kondo and Majorana interactions using a renormalization-group analysis, a slave-boson mean-field theory, and numerical simulations using the density-matrix renormalization-group method. We show that, in addition to the well-known Kondo fixed point, the system may flow to a new fixed point controlled by the Majorana-induced coupling, which is characterized by nontrivial correlations between a localized spin on the dot and the fermion parity of the topological superconductor and the normal lead. We compute several measurable quantities, such as differential tunneling conductance and impurity-spin susceptibility, which highlight some peculiar features characteristic to the Majorana fixed point.
Spin relaxation in quantum dots: Role of the phonon modulated spin-orbit interaction
Alcalde, A. M.; Romano, C. L.; Sanz, L.; Marques, G. E.
2010-01-01
We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. We analyze the behavior of the spin relaxation rates as a function of an external magnetic field and mean quantum dot radius. Effects of the spin admixture due to Dresselhaus contribution to spin-orbit interaction are also discussed.
Facile labeling of lipoglycans with quantum dots
International Nuclear Information System (INIS)
Morales Betanzos, Carlos; Gonzalez-Moa, Maria; Johnston, Stephen Albert; Svarovsky, Sergei A.
2009-01-01
Bacterial endotoxins or lipopolysaccharides (LPS) are among the most potent activators of the innate immune system, yet mechanisms of their action and in particular the role of glycans remain elusive. Efficient non-invasive labeling strategies are necessary for studying interactions of LPS glycans with biological systems. Here we report a new method for labeling LPS and other lipoglycans with luminescent quantum dots. The labeling is achieved by partitioning of hydrophobic quantum dots into the core of various LPS aggregates without disturbing the native LPS structure. The biofunctionality of the LPS-Qdot conjugates is demonstrated by the labeling of mouse monocytes. This simple method should find broad applicability in studies concerned with visualization of LPS biodistribution and identification of LPS binding agents.
Quantum Dot Molecular Beacons for DNA Detection
Cady, Nathaniel C.
Molecular beacons have become an important fluorescent probe for sequence-specific DNA detection. To improve the sensitivity and robustness of molecular beacon assays, fluorescent semiconductor quantum dots (QDs) are now being used as the fluorescent moiety for molecular beacon synthesis. Multiple linkage strategies can be used for attaching molecular beacon DNA to QDs, and multiple quenchers, including gold particles, can be used for fluorescence quenching. Covalent attachment of QDs to DNA can be achieved through amide linkage, and affinity-based attachment can be achieved with streptavidin-biotin linkage. We have shown that these linkage strategies can be used to successfully create quantum dot molecular beacons that can be used in DNA detection assays with high specificity.
Strain-tunable quantum dot devices
International Nuclear Information System (INIS)
Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.
2011-01-01
We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.
Electrically tunable single-dot nanocavities in the weak and strong coupling regimes
DEFF Research Database (Denmark)
Laucht, Arne; Hofbauer, Felix; Angele, Jacob
2008-01-01
We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities [1] operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies, where the dot-cavity spectral detuning...... of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. Vacuum Rabi splittings up to 2g...... electrical readout of the strongly coupled dot-cavity system using photocurrent methods will be discussed. This work is financially supported by the DFG via SFB 631 and by the German Excellence Initiative via the “Nanosystems Initiative Munich (NIM)”....
A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
DEFF Research Database (Denmark)
See, A. M.; Klochan, O.; Micolich, P.
2013-01-01
. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin......, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot....
Verma, Upendra Kumar; Kumar, Brijesh
2017-10-01
We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).
Interaction effects on a Majorana zero mode leaking into a quantum dot
Ruiz-Tijerina, David A.; Vernek, E.; Dias da Silva, Luis G. G. V.; Egues, J. C.
2015-03-01
We have recently shown [Phys. Rev. B 89, 165314 (2014), 10.1103/PhysRevB.89.165314] that a noninteracting quantum dot coupled to a one-dimensional topological superconductor and to normal leads can sustain a Majorana mode even when the dot is expected to be empty, i.e., when the dot energy level is far above the Fermi level of the leads. This is due to the Majorana bound state of the wire leaking into the quantum dot. Here we extend this previous work by investigating the low-temperature quantum transport through an interacting quantum dot connected to source and drain leads and side coupled to a topological wire. We explore the signatures of a Majorana zero mode leaking into the quantum dot for a wide range of dot parameters, using a recursive Green's function approach. We then study the Kondo regime using numerical renormalization group calculations. We observe the interplay between the Majorana mode and the Kondo effect for different dot-wire coupling strengths, gate voltages, and Zeeman fields. Our results show that a "0.5" conductance signature appears in the dot despite the interplay between the leaked Majorana mode and the Kondo effect. This robust feature persists for a wide range of dot parameters, even when the Kondo correlations are suppressed by Zeeman fields and/or gate voltages. The Kondo effect, on the other hand, is suppressed by both Zeeman fields and gate voltages. We show that the zero-bias conductance as a function of the magnetic field follows a well-known universality curve. This can be measured experimentally, and we propose that the universal conductance drop followed by a persistent conductance of 0.5 e2/h is evidence of the presence of Majorana-Kondo physics. These results confirm that this "0.5" Majorana signature in the dot remains even in the presence of the Kondo effect.
Single Molecule Applications of Quantum Dots
DEFF Research Database (Denmark)
Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.
2013-01-01
Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows:...... experiments held together with the prospects in localization microscopy and single molecule manipulation experiments gave QDs a promising future in single molecule research....
Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics
Barkhouse, D. Aaron R.
2011-05-26
The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The Silicon:Colloidal Quantum Dot Heterojunction
Masala, Silvia
2015-10-13
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Real two-stage Kondo effect in parallel double quantum dot
International Nuclear Information System (INIS)
Liao, Yan-Hua; Huang, Jin; Wang, Wei-Zhong
2015-01-01
We study the two-stage Kondo effect in asymmetric parallel double quantum dots. In the triplet, the magnetic moment screenings on two dots occur at the same Kondo temperature. In the critical regime of the triplet–singlet quantum phase transition, a two-stage Kondo screening accompanied with two kinds of Kondo resonance with two energy scales is observed. This is contrast to previous works, in which the Kondo peak in the second screening has not been observed. For large asymmetry of the Kondo coupling, the Kondo resonance in the second step is very weak, which indicates that the screening occurs mainly between two dots and is not a real Kondo screening. Therefore, the side-coupled double quantum dots, which have been extensively studied in the literature, are not an ideal candidate to show a real two-stage Kondo screening. - Highlights: • A real two-stage Kondo screening is not observable in side-coupled 2 quantum dots. • A two-stage Kondo screening is observed in asymmetric parallel 2 quantum dots. • The Kosterlitz–Thouless-type quantum phase transition is studied
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
Claudon, Julien; Munsch, Matthieu; Bleuse, Joel
2012-01-01
Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....
Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
Directory of Open Access Journals (Sweden)
LI Zhi-min
2017-08-01
Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.
Using of Quantum Dots in Biology and Medicine.
Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina
2018-01-01
Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.
International Nuclear Information System (INIS)
Arulsamy, Andrew Das; Ostrikov, Kostya
2010-01-01
Recent controversy on the quantum dots dephasing mechanisms (between pure and inelastic) is re-examined by isolating the quantum dots from their substrate by using the appropriate limits of the ionization energy theory and the quantum adiabatic theorem. When the phonons in the quantum dots are isolated adiabatically from the phonons in the substrate, the elastic or pure dephasing becomes the dominant mechanism. On the other hand, for the case where the phonons from the substrate are non-adiabatically coupled to the quantum dots, the inelastic dephasing process takes over. This switch-over is due to different elemental composition in quantum dots as compared to its substrate. We also provide unambiguous analysis as to understand why GaAs/AlGaAs quantum dots may only have pure dephasing while InAs/GaAs quantum dots give rise to the inelastic dephasing as the dominant mechanism. It is shown that the elemental composition plays an important role (of both quantum dots and substrate) in evaluating the dephasing mechanisms of quantum dots.
Quantum Dot/Liquid Crystal Nanocomposites in Photonic Devices
Directory of Open Access Journals (Sweden)
Andrea L. Rodarte
2015-07-01
Full Text Available Quantum dot/liquid crystal nano-composites are promising new materials for a variety of applications in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however, we need to control and stabilize nano-particle dispersion in different liquid crystal host phases and understand how the particles behave in an anisotropic fluid. An ideal system will allow for the controlled assembly of either well-defined nano-particle clusters or a uniform particle distribution. In this paper, we investigate mesogen-functionalized quantum dots for dispersion in cholesteric liquid crystal. These nanoparticles are known to assemble into dense stable packings in the nematic phase, and such structures, when localized in the liquid crystal defects, can potentially enhance the coupling between particles and a cholesteric cavity. Controlling the dispersion and assembly of quantum dots using mesogenic surface ligands, we demonstrate how resonant fluid photonic cavities can result from the co-assembly of luminescent nanoparticles in the presence of cholesteric liquid crystalline ordering.
Silicon quantum dots: fine-tuning to maturity.
Morello, Andrea
2015-12-18
Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.
International Nuclear Information System (INIS)
Liu Zhengqing; Liu Shaopu; Yin Pengfei; He Youqiu
2012-01-01
Graphical abstract: Glyphosate (Glyp) had been used to modify the surface of CdTe/CdS QDs, resulting in the enhancement of fluorescence intensity. The Glyp-functionalized QDs fluorescent probe offers good sensitivity and selectivity for detecting Cu 2+ based on the fluorescence quenching. Highlights: ► Water soluble CdTe/CdS quantum dots capped with glyphosate were firstly synthesized. ► The fluorescence of the Glyp-functionalized QDs was quenched by copper ion. ► A new fluorescent sensor for copper ion was developed based on the prepared QDs. ► The sensor exhibited high sensitivity and good selectivity for copper ion. - Abstract: A novel fluorescent probe for Cu 2+ determination based on the fluorescence quenching of glyphosate (Glyp)-functionalized quantum dots (QDs) was firstly reported. Glyp had been used to modify the surface of QDs to form Glyp-functionalized QDs following the capping of thioglycolic acid on the core–shell CdTe/CdS QDs. Under the optimal conditions, the response was linearly proportional to the concentration of Cu 2+ between 2.4 × 10 −2 μg mL −1 and 28 μg mL −1 , with a detection limit of 1.3 × 10 −3 μg mL −1 (3δ). The Glyp-functionalized QDs fluorescent probe offers good sensitivity and selectivity for detecting Cu 2+ . The fluorescent probe was successfully used for the determination of Cu 2+ in environmental samples. The mechanism of reaction was also discussed.
Energy Technology Data Exchange (ETDEWEB)
Liu Zhengqing; Liu Shaopu; Yin Pengfei [Key Laboratory on Luminescence and Real-Time Analysis, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715 (China); He Youqiu, E-mail: heyq@swu.edu.cn [Key Laboratory on Luminescence and Real-Time Analysis, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715 (China)
2012-10-01
Graphical abstract: Glyphosate (Glyp) had been used to modify the surface of CdTe/CdS QDs, resulting in the enhancement of fluorescence intensity. The Glyp-functionalized QDs fluorescent probe offers good sensitivity and selectivity for detecting Cu{sup 2+} based on the fluorescence quenching. Highlights: Black-Right-Pointing-Pointer Water soluble CdTe/CdS quantum dots capped with glyphosate were firstly synthesized. Black-Right-Pointing-Pointer The fluorescence of the Glyp-functionalized QDs was quenched by copper ion. Black-Right-Pointing-Pointer A new fluorescent sensor for copper ion was developed based on the prepared QDs. Black-Right-Pointing-Pointer The sensor exhibited high sensitivity and good selectivity for copper ion. - Abstract: A novel fluorescent probe for Cu{sup 2+} determination based on the fluorescence quenching of glyphosate (Glyp)-functionalized quantum dots (QDs) was firstly reported. Glyp had been used to modify the surface of QDs to form Glyp-functionalized QDs following the capping of thioglycolic acid on the core-shell CdTe/CdS QDs. Under the optimal conditions, the response was linearly proportional to the concentration of Cu{sup 2+} between 2.4 Multiplication-Sign 10{sup -2} {mu}g mL{sup -1} and 28 {mu}g mL{sup -1}, with a detection limit of 1.3 Multiplication-Sign 10{sup -3} {mu}g mL{sup -1} (3{delta}). The Glyp-functionalized QDs fluorescent probe offers good sensitivity and selectivity for detecting Cu{sup 2+}. The fluorescent probe was successfully used for the determination of Cu{sup 2+} in environmental samples. The mechanism of reaction was also discussed.
Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals
International Nuclear Information System (INIS)
See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.
2015-01-01
Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure
Directory of Open Access Journals (Sweden)
Pengqin Shi
2016-09-01
Full Text Available Based on the time-nonlocal particle number-resolved master equation, we investigate the sequential electron transport through the interacting double quantum dots. Our calculations show that there exists the effect of energy renormalization in the dispersion of the bath interaction spectrum and it is sensitive to the the bandwidth of the bath. This effect would strongly affect the stationary current and its zero-frequency shot noise for weak inter-dot coherent coupling strength, but for strong inter-dot coupling regime, it is negligible due to the strong intrinsic Rabi coherent dynamics. Moreover, the possible observable effects of the energy renormalization in the noise spectrum are also investigated through the Rabi coherence signal. Finally, the non-Markovian effect is manifested in the finite-frequency noise spectrum with the appearance of quasisteps, and the magnitude of these quasisteps are modified by the dispersion function.
Sadeghi, S M
2014-09-01
When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.
Magic angle for barrier-controlled double quantum dots
Yang, Xu-Chen; Wang, Xin
2018-01-01
We show that the exchange interaction of a singlet-triplet spin qubit confined in double quantum dots, when being controlled by the barrier method, is insensitive to a charged impurity lying along certain directions away from the center of the double-dot system. These directions differ from the polar axis of the double dots by the magic angle, equaling arccos(1 /√{3 })≈54 .7∘ , a value previously found in atomic physics and nuclear magnetic resonance. This phenomenon can be understood from an expansion of the additional Coulomb interaction created by the impurity, but also relies on the fact that the exchange interaction solely depends on the tunnel coupling in the barrier-control scheme. Our results suggest that for a scaled-up qubit array, when all pairs of double dots rotate their respective polar axes from the same reference line by the magic angle, crosstalk between qubits can be eliminated, allowing clean single-qubit operations. While our model is a rather simplified version of actual experiments, our results suggest that it is possible to minimize unwanted couplings by judiciously designing the layout of the qubits.
Ultrafast signal processing in quantum dot amplifiers through effective spectral holeburning
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper; Uskov, A. V.
2002-01-01
Significant progress has been obtained on quantum dot (QD) lasers, but the possible advantages of QD amplifiers are not yet clear. We show here that a relatively slow coupling between the optically active QD carrier states and the surrounding carrier reservoir can lead to efficient gain modulation......), and the wetting layer (WL), where current is injected. Time evolution is described by two coupled rate equations. Carrier capture from WL to dots is characterized by the capture time /spl tau//sub 0/....
Quantum size effect and thermal stability of carbon-nanotube-based quantum dot
International Nuclear Information System (INIS)
Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.
2004-01-01
Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)
High-Q submicron-diameter quantum-dot microcavity pillars for cavity QED experiments
DEFF Research Database (Denmark)
Gregersen, Niels; Lermer, Matthias; Dunzer, Florian
As/AlAs micropillar design where Bloch-wave engineering is employed to significally enhance the cavity mode confinement in the submicron diameter regime. We demonstrate a record-high vacuum Rabi splitting of 85 µeV of the strong coupling for pillars incorporating quantum dots with modest oscillator strength f ≈ 10....... It is well-known that light-matter interaction depends on the photonic environment, and thus proper engineering of the optical mode in microcavity systems is central to obtaining the desired functionality. In the strong coupling regime, the visibility of the Rabi splitting is described by the light...... coupling in micropillars relied on quantum dots with high oscillator strengths f > 50, our advanced design allows for the observation of strong coupling for submicron diameter quantum dot-pillars with standard f ≈ 10 oscillator strength. A quality factor of 13600 and a vacuum Rabi splitting of 85 µe...
Efficient spin filter using multi-terminal quantum dot with spin-orbit interaction
Directory of Open Access Journals (Sweden)
Yokoyama Tomohiro
2011-01-01
Full Text Available Abstract We propose a multi-terminal spin filter using a quantum dot with spin-orbit interaction. First, we formulate the spin Hall effect (SHE in a quantum dot connected to three leads. We show that the SHE is significantly enhanced by the resonant tunneling if the level spacing in the quantum dot is smaller than the level broadening. We stress that the SHE is tunable by changing the tunnel coupling to the third lead. Next, we perform a numerical simulation for a multi-terminal spin filter using a quantum dot fabricated on semiconductor heterostructures. The spin filter shows an efficiency of more than 50% when the conditions for the enhanced SHE are satisfied. PACS numbers: 72.25.Dc,71.70.Ej,73.63.Kv,85.75.-d
Hybrid passivated colloidal quantum dot solids
Ip, Alex
2012-07-29
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.
Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.
Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng
2011-03-28
Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:
Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve
Directory of Open Access Journals (Sweden)
Ma Jing-Min
2011-01-01
Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:
Amphoteric CdSe nanocrystalline quantum dots.
Islam, Mohammad A
2008-06-25
The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.
Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics, Phase I
National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...
Analytic Characterization of the Dynamic Regimes of Quantum-Dot Lasers
Directory of Open Access Journals (Sweden)
Benjamin Lingnau
2015-04-01
Full Text Available We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn-on and modulation dynamics. A dynamic coupling, and thus density-dependent scattering lifetimes between dots and reservoir, are identified to be crucial for a realistic modeling. We derive a minimal model for the quantum-dot laser dynamics that can be seeded with experimentally accessible parameters, and give explicit analytic equations that are able to predict relaxation-oscillation frequency and damping rate.
Silicon Quantum Dots with Counted Antimony Donor Implants
Energy Technology Data Exchange (ETDEWEB)
Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
2015-10-01
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.
Electrostatically defined silicon quantum dots with counted antimony donor implants
Energy Technology Data Exchange (ETDEWEB)
Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2016-02-08
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
Studies on silicon quantum dots prepared at different working pressure
Directory of Open Access Journals (Sweden)
Faisal A. Al-Agel
Full Text Available This research work describes the synthesis and characterization of Si quantum dots of thickness 20Â nm prepared on glass/quartz substrate by Physical Vapour Condensation Technique at the working pressure of 5 and 10Â Torr with fixed substrate temperature 77Â K using liquid nitrogen. The synthesized quantum dots were studied by FESEM, HRTEM, X-ray diffraction, UVâvisible spectroscopy, photoluminescence and FTIR spectroscopy. The X-ray diffraction pattern of synthesized quantum dots shows the amorphous nature. FESEM images of synthesized quantum dots suggest that the size of quantum dots varies from 4â6Â nm which is further confirmed by HRTEM. On the basis of optical absorbance by UVâvisible spectroscopy, a direct band gap has been detected. FTIR spectra suggest that the as-grown Si quantum dots are partially oxidized which is due exposure of samples to air after taking out the samples from the chamber. PL spectra show a broad peak at 444Â nm, which may be attributed to the configuration of amorphous Si quantum dots. A slight shift in the peak position has been observed with increase in working pressure from 5Â Torr to 10Â Torr. The dc conductivity with temperature of Si quantum dots has also been studied from 303 to 454Â K. It is evident that the dc conductivity (Ïdc enhances linearly with temperature, showing that conduction in Si quantum dots is due to an activated action which further verify the semiconductor deportment of these quantum dots. Keywords: Si quantum dots, Thin films, XRD, Optical properties, Electrical properties
Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher
2006-01-01
We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....
Systematic optimization of quantum junction colloidal quantum dot solar cells
Liu, Huan
2012-01-01
The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.
Band structures of graphene hexagonal lattice semiconductor quantum dots
Peng, Juan; Li, Shu-Shen
2010-12-01
Electronic structures of coupled semiconductor quantum dots (QDs) arranged as graphene hexagonal lattice are studied theoretically using the tight-binding method. In our calculations, the electrons can hop to the third-nearest-neighbors, and the overlap matrix as well as the multicenter integral are taken into account. The novel two-dimensional Dirac-like electronic excitations in graphene are found in these artificial planar QD structures. The results provide the theoretical basis for searching Dirac fermions in QD materials and have great significance for investigating and making semiconductor QD devices.
Peptide-mediated intracellular delivery of quantum dots
DEFF Research Database (Denmark)
Lagerholm, B Christoffer
2007-01-01
Quantum dots (QDs) have received a great amount of interest for use as fluorescent labels in biological applications. QDs are brightly fluorescent and very photostable, satisfying even imaging applications that require single molecule detection at high repetition rates over long periods of time...... (minutes to hours). There are by now numerous methods for conferring biospecificity and function including cell membrane permeability to QDs. A particular convenient method of conferring membrane penetrating ability and in some cases also biospecificity has been to couple biotinylated protein transduction...
Activation of molecular catalysts using semiconductor quantum dots
Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM
2011-10-04
Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.
Quantum error prevention and leakage elimination for quantum dots
Pegahan, Saeed; Byrd, Mark S.; Reddy Chinni, Karthik
2015-03-01
Decoherence-free, or noiseless subsystems, are used to encode spin qubits in quantum dots in order to achieve universal quantum computing using only the exchange interaction. We investigate the use of dynamical decoupling controls for the purposes of eliminating leakage for a logical qubit encoded using three physical qubits. These leakage elimination operators (LEOs) can be used to eliminate all leakage errors using exchange interactions between the physical spin qubits. Depending on the encoding and the decoupling control, different types of errors can be eliminated. We show several different possible controls and the consequential noise reduction for different encodings as well as our general method for determining the effectiveness of these pulses.
Colloidal Quantum Dot Photovoltaics: A Path Forward
Kramer, Illan J.
2011-11-22
Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.
Extended orbital modeling of spin qubits in double quantum dots
White, Zack; Ramon, Guy
2018-01-01
Orbital modeling of two electron spins confined in a double quantum dot is revisited. We develop an extended Hund-Mulliken approach that includes excited orbitals, allowing for a triplet configuration with both electrons residing in a single dot. This model improves the reliability and applicability of the standard Hund-Mulliken approximation, while remaining largely analytical, thus it enables us to identify the mechanisms behind the exchange coupling dynamics that we find. In particular, our calculations are in close agreement with exchange values that were recently measured at a high interdot bias regime, where the double occupancy triplet configuration is energetically accessible, demonstrating reduced sensitivity to bias fluctuations, while maintaining the large exchange needed for fast gating.
Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot
DEFF Research Database (Denmark)
Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal
2016-01-01
We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offe...
Fractional decay of quantum dots in photonic crystals
DEFF Research Database (Denmark)
Kristensen, Philip Trøst; Koenderink, Femius; Lodahl, Peter
2008-01-01
We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses.......We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses....
Single-photon superradiance from a quantum dot
DEFF Research Database (Denmark)
Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff
2016-01-01
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and t...
Electronic properties of assemblies of zno quantum dots
Roest, Aarnoud Laurens
2003-01-01
Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling
Stark effect and polarizability of graphene quantum dots
DEFF Research Database (Denmark)
Pedersen, Thomas Garm
2017-01-01
The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...
Electron transport and coherence in semiconductor quantum dots and rings
Van der Wiel, W.G.
2002-01-01
A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that
Quantum dots for multimodal molecular imaging of angiogenesis
Mulder, Willem J. M.; Strijkers, Gustav J.; Nicolay, Klaas; Griffioen, Arjan W.
2010-01-01
Quantum dots exhibit unique optical properties for bioimaging purposes. We have previously developed quantum dots with a paramagnetic and functionalized coating and have shown their potential for molecular imaging purposes. In the current mini-review we summarize the synthesis procedure, the in
Detection Systems and Algorithms for Multiplexed Quantum Dots
Goss, Kelly Christine
Quantum Dots (QDs) are semiconductor nanocrystals that absorb light and re-emit at a wavelength dependent on its size and shape. A group of quantum dots can be designed to have a unique spectral emission by varying the size of the quantum dots (wavelength) and number of quantum dots (optical power) [1]. This technology is refered to as Multiplexed Quantum Dots (MxQD) and when it was first proposed, MxQD tags were created with 6 optical power levels and one QD colour or 3 QD colours and 2 optical power levels. It was hypothesized that a realistic limit to the number of tags would be a system of 6 optical power levels and 6 QD colours resulting in 46655 unique tags. In recent work, the fabrication and detection of 9 unique tags [2] was demonstrated which is still far from the predicted capability of the technology. The limitations affecting the large number of unique tags are both the fabrication methods and the data detection algorithms used to read the spectral emissions. This thesis makes contributions toward improving the data detection algorithms for MxQD tags. To accomplish this, a communications system model is developed that includes the inteference between QD colours, Inter-Symbol Interference (ISI), and additive noise. The model is developed for the two optical detectors, namely a Charge-Coupled Device (CCD) spectrometer and photodiode detectors. The model also includes an analytical expression for the Signal-to-Noise Ratio (SNR) of the detectors. For the CCD spectrometer, this model is verified with an experimental prototype. With the models in place, communications systems tools are applied that overcome both ISI and noise. This is an improvement over previous work in the field that only considered algorithms to overcome the ISI or noise separately. Specifically, this thesis outlines the proposal of a matched filter to improve SNR, a Minimum Mean Square Error (MMSE) equalizer that mitigates ISI in the presence of noise and a Maximum Likelihood Sequence
Fabrication of a graphene quantum dot device
Lee, Jeong Il; Kim, Eunseong
2014-03-01
Graphene, which exhibits a massless Dirac-like spectrum for its electrons, has shown impressive properties for nano-electronics applications including a high mobility and a width dependent bandgap. We will report the preliminary report on the transport property of the suspended graphene nano-ribbon(GNR) quantum dot device down to dilution refrigerator temperature. This GNR QD device was fabricated to realize an ideal probe to investigate Kondo physics--a characteristic phenomenon in the physics of strongly correlated electrons. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.
Quantum dot blueing and blinking enables fluorescence nanoscopy.
Hoyer, Patrick; Staudt, Thorsten; Engelhardt, Johann; Hell, Stefan W
2011-01-12
We demonstrate superresolution fluorescence imaging of cells using bioconjugated CdSe/ZnS quantum dot markers. Fluorescence blueing of quantum dot cores facilitates separation of blinking markers residing closer than the diffraction barrier. The high number of successively emitted photons enables ground state depletion microscopy followed by individual marker return with a resolving power of the size of a single dot (∼12 nm). Nanoscale imaging is feasible with a simple webcam.
Second-harmonic imaging of semiconductor quantum dots
DEFF Research Database (Denmark)
Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld
2000-01-01
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....
Interaction of porphyrins with CdTe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)
2011-05-13
Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.
Numerical simulation of optical feedback on a quantum dot lasers
International Nuclear Information System (INIS)
Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.
2012-01-01
We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.
3D super-resolution imaging with blinking quantum dots
Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.
2013-01-01
Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439
Interaction of porphyrins with CdTe quantum dots
International Nuclear Information System (INIS)
Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei
2011-01-01
Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.
CdZnTe quantum dots study: energy and phase relaxation process
International Nuclear Information System (INIS)
Viale, Yannick
2004-01-01
We present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantum wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrational states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and bi-excitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time. (author) [fr
Robust tunable excitonic features in monolayer transition metal dichalcogenide quantum dots
Fouladi-Oskouei, J.; Shojaei, S.; Liu, Z.
2018-04-01
The effects of quantum confinement on excitons in parabolic quantum dots of monolayer transition metal dichalcogenides (TMDC QDs) are investigated within a massive Dirac fermion model. A giant spin-valley coupling of the TMDC QDs is obtained, larger than that of monolayer TMDC sheets and consistent with recent experimental measurements. The exciton transition energy and the binding energy are calculated, and it is found that the strong quantum confinement results in extremely high exciton binding energies. The enormously large exciton binding energy in TMDC QDs (({{E}{{B2D}}}∼ 500 meV)quantum confinements, leading to tunable quantum dots in monolayer TMDCs. This finding offers new functionality in engineering the interaction of a 2D material with light and creates promise for the quantum manipulation of spin and valley degrees of freedom in TMDC nanostructures, enabling versatile novel 2D quantum photonic and optoelectronic nanodevices.
DEFF Research Database (Denmark)
Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper
2011-01-01
A microscopic theory is used to study the dynamical properties of semiconductor quantum dot based nanocavity laser systems. The carrier kinetics and photon populations are determined using a fully quantum mechanical treatment of the light‐matter coupling. In this work, we investigate the dependency...... of the modulation response in such devices on the number of emitters coupled to the cavity mode. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)...
Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells
International Nuclear Information System (INIS)
Founta, S.; Bougerol, C.; Mariette, H.; Daudin, B.; Vennegues, P.
2007-01-01
The growth of (11-20) or a-plane quantum dots and quantum wells by plasma-assisted molecular-beam epitaxy has been studied. It is shown that Ga-rich conditions lead to the formation of quantum dots, whereas quantum wells are obtained in N-rich conditions. Combining various experimental techniques, it is furthermore demonstrated that quantum dot nucleation along [1-100] and quantum well morphology in the (1-100) plane are influenced by anisotropic growth of AlN buffer layer. Moreover, it is established that peculiar morphological features of quantum dots and quantum wells, in particular the asymmetric shape of quantum dots, are related to the polar character of the [0001] direction in wurtzite nitride material
Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots
International Nuclear Information System (INIS)
Xie, Ruishi; Zhang, Xingquan; Liu, Haifeng
2014-01-01
Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for
Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Xie, Ruishi, E-mail: rxie@foxmail.com; Zhang, Xingquan; Liu, Haifeng
2014-03-15
Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for
Rauf Abdullah, Nzar; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2016-09-21
We investigate theoretically the balance of the static magnetic and the dynamical photon forces in the electron transport through a quantum dot in a photon cavity with a single photon mode. The quantum dot system is connected to external leads and the total system is exposed to a static perpendicular magnetic field. We explore the transport characteristics through the system by tuning the ratio, [Formula: see text], between the photon energy, [Formula: see text], and the cyclotron energy, [Formula: see text]. Enhancement in the electron transport with increasing electron-photon coupling is observed when [Formula: see text]. In this case the photon field dominates and stretches the electron charge distribution in the quantum dot, extending it towards the contact area for the leads. Suppression in the electron transport is found when [Formula: see text], as the external magnetic field causes circular confinement of the charge density around the dot.
Colloidal quantum dot light-emitting devices
Directory of Open Access Journals (Sweden)
Vanessa Wood
2010-07-01
Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.
Using quantum dot photoluminescence for load detection
Directory of Open Access Journals (Sweden)
M. Moebius
2016-08-01
Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
International Nuclear Information System (INIS)
Dong Bing; Lei Xiaolin; Cui Hongliang
2008-01-01
We report our studies of zero-frequency shot noise in tunneling through a parallel-coupled quantum dot interferometer by employing number-resolved quantum rate equations. We show that the combination of quantum interference effect between two pathways and strong Coulomb repulsion could result in a giant Fano factor, which is controllable by tuning the enclosed magnetic flux
Ferritin-Templated Quantum-Dots for Quantum Logic Gates
Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.
2005-01-01
Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.
Charge-extraction strategies for colloidal quantum dot photovoltaics
Lan, Xinzheng
2014-02-20
The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.
Wei, Hai-Rui; Deng, Fu-Guo
2013-07-29
We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.
Edge physics of the quantum spin Hall insulator from a quantum dot excited by optical absorption.
Vasseur, Romain; Moore, Joel E
2014-04-11
The gapless edge modes of the quantum spin Hall insulator form a helical liquid in which the direction of motion along the edge is determined by the spin orientation of the electrons. In order to probe the Luttinger liquid physics of these edge states and their interaction with a magnetic (Kondo) impurity, we consider a setup where the helical liquid is tunnel coupled to a semiconductor quantum dot that is excited by optical absorption, thereby inducing an effective quantum quench of the tunneling. At low energy, the absorption spectrum is dominated by a power-law singularity. The corresponding exponent is directly related to the interaction strength (Luttinger parameter) and can be computed exactly using boundary conformal field theory thanks to the unique nature of the quantum spin Hall edge.
Tahan, Charles; Friesen, Mark; Joynt, Robert; Eriksson, M. A.
2003-03-01
Although electron spin qubits in semiconductors are attractive from the viewpoint of low environmental coupling and long coherence times, spin readout remains a challenge for quantum dot quantum computing. Unfortunately, promising schemes based on spin-charge transduction introduce external couplings in the form of reference qubits or Coulomb blockade leads. Here, we propose a twist on the spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot (QD). The same QD can be used for initialization, gating, and readout, without unnecessary external couplings. We present detailed investigations into such a scheme in both SiGe and GaAs systems: simulations, including capacitive coupling to a RF-SET, calculations of coherent oscillation times which determine the read-out speed, and calculations of electron spin relaxation times which determine the initialization speed. We find that both initialization and readout can be performed within the same architecture. Work supported by NSF-QuBIC and MRSEC programs, ARDA, and NSA.
International Nuclear Information System (INIS)
Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.
2003-01-01
We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity
Gate-defined quantum dots in intrinsic silicon.
Angus, Susan J; Ferguson, Andrew J; Dzurak, Andrew S; Clark, Robert G
2007-07-01
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2010-01-01
determined the oscillator strength, quantum efficiency and spin-flip rates of QD excitons as well as their dependencies on emission wavelength and QD size. Enhancement and inhibition of QD spontaneous emission in photonic crystal membranes (PCMs) is observed. Efficient coupling to PCM waveguides...
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2011-01-01
determined the oscillator strength, quantum efficiency and spin-flip rates of QD excitons as well as their dependencies on emission wavelength and QD size. Enhancement and inhibition of QD spontaneous emission in photonic crystal membranes (PCMs) is observed. Efficient coupling to PCM waveguides...
Exciton-polariton dynamics in quantum dot-cavity system
Energy Technology Data Exchange (ETDEWEB)
Neto, Antonio F.; Lima, William J.; Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica
2012-07-01
Full text: One of the basic requirement for quantum information processing systems is the ability to completely control the state of a single qubit. This imply in know all sources of decoherence and elaborate ways to avoid them. In recent work, A. Laucht et al. [1] presented detailed theoretical and experimental investigations of electrically tunable single quantum dot (QD) - photonic crystal (PhC) nanocavity systems operating in the strong coupling regime of the light matter interaction. Unlike previous studies, where the exciton-cavity spectral detuning was varied by changing the lattice temperature, or by the adsorption of inert gases at low temperatures, they employ the quantum confined Stark-effect to electro-optically control the exciton-cavity detuning. The new built device enabled them to systematically probe the emission spectrum of the strongly coupled system as a function of external control parameters, as for example the incoherent excitation power density or the lattice temperature. Those studies reveal for the first time insights in dephasing mechanisms of 0D exciton polaritons [1]. In another study [2], using a similar device, they investigate the coupling between two different QDs with a single cavity mode. In both works, incoherent pumping was used, but for quantum information, coherent and controlled excitations are necessary. Here, we theoretically investigate the dynamics a single quantum dot inside a cavity under coherent pulse excitation and explore a wide range of parameters, as for example, the exciton-cavity detunings, the excitation power, the spontaneous decay, and pure dephasing. We use density matrix formalism in the Lindblad form, and we solve it numerically. Our results show that coherent excitation can be used to probe strong coupling between exciton and cavity mode by monitoring the exciton Rabi oscillation as function of the cavity detuning. This can give new insights for future experimental measurement focusing on quantum
Imaging Few-Electron Double Quantum Dots in InAs/InP Nanowires
Trodahl, Halvar J.; Boyd, Erin E.; Bleszynski, Ania; Westervelt, R. M.; Froberg, Linus E.; Samuelson, Lars
2007-03-01
InAs quantum dots formed in InAs/InP nanowire heterostructures are attractive candidates for nanoelectronics, spintronics and quantum information processing. Tunnel-coupled double InAs dots defined by InP barriers can be grown using chemical beam epitaxy; each dot can be small enough to hold just a few electrons. It is difficult to lithographically define gates small enough to individually address each dot. With use of a liquid-He cooled scanning probe microscope (SPM), the Coulomb blockade conductance of a single InAs quantum dot in an InAs/InP nanowire has been imaged, using the SPM tip as a movable gate [1]. This approach can individually tune the charge on each InAs dot in an InAs/InP nanowire. We plan to use this technique to investigate tunnel-coupled InAs double dots. [1] A. Bleszynski et al., 28th Int. Conf. on the Physics of Semiconductors, 2006.
Pulse train amplification and regeneration based on semiconductor quantum dots waveguide
DEFF Research Database (Denmark)
Chen, Yaohui; Öhman, Filip; Mørk, Jesper
2008-01-01
We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....
Exciton dephasing in single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....
Quantum efficiency and oscillator strength of site-controlled InAs quantum dots
DEFF Research Database (Denmark)
Albert, F.; Stobbe, Søren; Schneider, C.
2010-01-01
We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...
Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots
DEFF Research Database (Denmark)
Albert, F.; Schneider, C.; Stobbe, Søren
2010-01-01
We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...
Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices
International Nuclear Information System (INIS)
Schwager, Heike
2012-01-01
In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with
Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices
Energy Technology Data Exchange (ETDEWEB)
Schwager, Heike
2012-07-04
In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with
International Nuclear Information System (INIS)
Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.
2010-01-01
Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.
Duque, C. A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Sökmen, I.
2010-10-01
Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1- xAl xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.
Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience
Pathak, Smita
Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to
A triple quantum dot based nano-electromechanical memory device
International Nuclear Information System (INIS)
Pozner, R.; Lifshitz, E.; Peskin, U.
2015-01-01
Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM
Rabi oscillations a quantum dot exposed to quantum light
International Nuclear Information System (INIS)
Magyarov, A.; Slepyan, G.Ya.; Maksimenko, S.A.; Hoffmann, A.
2007-01-01
The influence of the local field on the excitonic Rabi oscillations in an isolated quantum dot driven by the coherent state of light has been theoretically investigated. Local field is predicted to entail the appearance of two oscillatory regimes in the Rabi effect separated by the bifurcation. In the first regime Rabi oscillations are periodic and do not reveal collapse-revivals phenomenon, while in the second one collapse and revivals appear, showing significant difference as compared to those predicted by the standard Jaynes-Cummings model
Quantum interference effects for the electronic fluctuations in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Ramos, J.G.G.S. [Universidade Federal da Paraiba (UFPB), Rio Tinto, PB (Brazil). Departamento de Ciencias Exatas; Hussein, M.S. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica; Barbosa, A.L.R. [Universidade Federal Rural de Pernambuco (UAEADTec/UFRPE), Recife, PE (Brazil). Unidade Academica de Ensino a Distancia. Pos-Graduacao em Fisica Aplicada
2014-07-01
For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)
International Nuclear Information System (INIS)
Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.
2013-01-01
Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures
Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots
Directory of Open Access Journals (Sweden)
Ian D. Tomlinson
2007-01-01
Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.
Study of a Quantum Dot in an Excited State
Slamet, Marlina; Sahni, Viraht
We have studied the first excited singlet state of a quantum dot via quantal density functional theory (QDFT). The quantum dot is represented by a 2D Hooke's atom in an external magnetostatic field. The QDFT mapping is from an excited singlet state of this interacting system to one of noninteracting fermions in a singlet ground state. The results of the study will be compared to (a) the corresponding mapping from a ground state of the quantum dot and (b) to the similar mapping from an excited singlet state of the 3D Hooke's atom.
Quantum Dots Microstructured Optical Fiber for X-Ray Detection
DeHaven, Stan; Williams, Phillip; Burke, Eric
2015-01-01
Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.
Energy Technology Data Exchange (ETDEWEB)
Loeffler, Andreas
2008-11-05
At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 {mu}m. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10{sup 9} cm{sup -2} and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 {mu}eV between the
Characterization of graphene quantum dot hybrid structures
Chung, Ting-Fung; Hu, Jiuning; Jauregui, Luis A.; Chen, Liangliang; Zhao, Qing; Ruan, Xiulin; Chen, Yong P.
2012-02-01
We report electrical transport, photo-electric response and Raman spectroscopy measurements in macroscopic samples of graphene decorated with inorganic quantum dots (CdSe QDs). QDs are deposited on chemical vapor deposition (CVD) graphene by spin-coating. Raman measurements of graphene decorated with QDs on Si wafer show very similar spectra with clear G and 2D peaks that reveal no degradation of graphene during the QDs deposition process. Furthermore, two types of device architectures (QDs-graphene and graphene-QDs-graphene) are fabricated with graphene as a transparent electrode and QD as a light absorbent for electrical photoresponse characterization. Upon application of either a broadband light source or a 532-nm monochromatic laser source, graphene-QDs-graphene devices demonstrate photoconducting response, but not in the case of QDs-graphene devices.
Tellurium quantum dots: Preparation and optical properties
Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping
2017-08-01
Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.
Quantum dots: synthesis, bioapplications, and toxicity
Valizadeh, Alireza; Mikaeili, Haleh; Samiei, Mohammad; Farkhani, Samad Mussa; Zarghami, Nosratalah; kouhi, Mohammad; Akbarzadeh, Abolfazl; Davaran, Soodabeh
2012-08-01
This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials.
Recent advances in quantum dot surface chemistry.
Hines, Douglas A; Kamat, Prashant V
2014-03-12
Quantum dot (QD) surface chemistry is an emerging field in semiconductor nanocrystal related research. Along with size manipulation, the careful control of QD surface chemistry allows modulation of the optical properties of a QD suspension. Even a single molecule bound to the surface can introduce new functionalities. Herein, we summarize the recent advances in QD surface chemistry and the resulting effects on optical and electronic properties. Specifically, this review addresses three main issues: (i) how surface chemistry affects the optical properties of QDs, (ii) how it influences the excited state dynamics, and (iii) how one can manipulate surface chemistry to control the interactions between QDs and metal oxides, metal nanoparticles, and in self-assembled QD monolayers.
Electronic levels of cubic quantum dots
Energy Technology Data Exchange (ETDEWEB)
Aristone, Flavio [Federal De Mato Grosso Do Sul Univ., Campo Grande (Brazil); Sanchez-Dehesa, Jose [Autonoma De Madrid Univ., Madrid (Spain); Marques, Gilmar E. [Federal De Sao Carlos Univ., Sao Carlos (Brazil)
2003-09-01
We introduce an efficient variational method to solve the three-dimensional Schroedinger equation for any arbitrary potential V(x,y,z). The method uses a basis set of localized functions which are build up as products of one-dimensional cubic {beta}-splines. We calculated the energy levels of GaAs/AlGaAs cubic quantum dots and make a comparison with the results from two well-known simplification schemes based on a decomposition of the full potential problem into three separate one-dimensional problems. We show that the scheme making a sequential decomposition gives eigenvalues in better agreement with the ones obtained variationally, but an exact solution is necessary when looking for highly precise values.
Protease-activated quantum dot probes
International Nuclear Information System (INIS)
Chang, Emmanuel; Miller, Jordan S.; Sun, Jiantang; Yu, William W.; Colvin, Vicki L.; Drezek, Rebekah; West, Jennifer L.
2005-01-01
We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker
Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
Directory of Open Access Journals (Sweden)
Altaisky Mikhail V.
2016-01-01
Full Text Available We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.
Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots
International Nuclear Information System (INIS)
Wang, Chen; Cao, Jianshu; Ren, Jie
2014-01-01
We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices
Application of Quantum Dots in Biological Imaging
Directory of Open Access Journals (Sweden)
Shan Jin
2011-01-01
Full Text Available Quantum dots (QDs are a group of semiconducting nanomaterials with unique optical and electronic properties. They have distinct advantages over traditional fluorescent organic dyes in chemical and biological studies in terms of tunable emission spectra, signal brightness, photostability, and so forth. Currently, the major type of QDs is the heavy metal-containing II-IV, IV-VI, or III-V QDs. Silicon QDs and conjugated polymer dots have also been developed in order to lower the potential toxicity of the fluorescent probes for biological applications. Aqueous solubility is the common problem for all types of QDs when they are employed in the biological researches, such as in vitro and in vivo imaging. To circumvent this problem, ligand exchange and polymer coating are proven to be effective, besides synthesizing QDs in aqueous solutions directly. However, toxicity is another big concern especially for in vivo studies. Ligand protection and core/shell structure can partly solve this problem. With the rapid development of QDs research, new elements and new morphologies have been introduced to this area to fabricate more safe and efficient QDs for biological applications.
First principles study of edge carboxylated graphene quantum dots
Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.
2018-05-01
The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.
Resonance fluorescence and electron spin in semiconductor quantum dots
International Nuclear Information System (INIS)
Zhao, Yong
2009-01-01
The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)
Resonance fluorescence and electron spin in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zhao, Yong
2009-11-18
The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications
Directory of Open Access Journals (Sweden)
Lin Wen
2017-07-01
Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.
Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing
2017-07-28
Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals
International Nuclear Information System (INIS)
Qian Jun; Jin Shiqi; Gong Shangqing; Qian Yong; Feng Xunli
2008-01-01
We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure
Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices
Energy Technology Data Exchange (ETDEWEB)
Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil' ev, A. P.; Ustinov, V. M. [Ioffe Physical Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya ul., St. Petersburg 194021 (Russian Federation)
2014-02-21
Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.
DEFF Research Database (Denmark)
Koller, Sonja; Grifoni, Milena; Paaske, Jens
2012-01-01
We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...
Transient charging and discharging of spin-polarized electrons in a quantum dot
DEFF Research Database (Denmark)
De Souza, Fabricio; Leao, S.A.; Gester, R. M.
2007-01-01
We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green...
Dynamic dipole-dipole interactions between excitons in quantum dots of different sizes
DEFF Research Database (Denmark)
Matsueda, Hideaki; Leosson, Kristjan; Xu, Zhangcheng
2004-01-01
A model of the resonance dynamic dipole-dipole interaction between excitons confined in quantum dots (QDs) of different sizes at close enough distance is given in terms of parity inheritance and exchange of virtual photons. Microphotoluminescence spectra of GaAs-AlGaAs coupled QDs are proposed to...
Wei, Yu-Jia; He, Yu; He, Yu-Ming; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven; McCutcheon, Dara P S; Nazir, Ahsan
2014-08-29
We investigate temperature-dependent resonance fluorescence spectra obtained from a single self-assembled quantum dot. A decrease of the Mollow triplet sideband splitting is observed with increasing temperature, an effect we attribute to a phonon-induced renormalization of the driven dot Rabi frequency. We also present first evidence for a nonperturbative regime of phonon coupling, in which the expected linear increase in sideband linewidth as a function of temperature is canceled by the corresponding reduction in Rabi frequency. These results indicate that dephasing in semiconductor quantum dots may be less sensitive to changes in temperature than expected from a standard weak-coupling analysis of phonon effects.
Nodal ground states and orbital textures in semiconductor quantum dots
Czech Academy of Sciences Publication Activity Database
Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.
2014-01-01
Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014
Nonequilibrium electron transport through quantum dots in the Kondo regime
DEFF Research Database (Denmark)
Wölfle, Peter; Paaske, Jens; Rosch, Achim
2005-01-01
Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how the ...
Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)
International Nuclear Information System (INIS)
Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle
2006-01-01
We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results
A fabrication guide for planar silicon quantum dot heterostructures
Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.
2018-04-01
We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.
Coal as an abundant source of graphene quantum dots
Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P.; Samuel, Errol L. G.; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O.; Martí, Angel A.; Tour, James M.
2013-12-01
Coal is the most abundant and readily combustible energy resource being used worldwide. However, its structural characteristic creates a perception that coal is only useful for producing energy via burning. Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes for producing quantum dots. The crystalline carbon within the coal structure is easier to oxidatively displace than when pure sp2-carbon structures are used, resulting in nanometre-sized graphene quantum dots with amorphous carbon addends on the edges. The synthesized graphene quantum dots, produced in up to 20% isolated yield from coal, are soluble and fluorescent in aqueous solution, providing promise for applications in areas such as bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additives for structural composites.
Ge Quantum Dot Infrared Imaging Camera, Phase I
National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...
Non-Markovian spontaneous emission from a single quantum dot
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke
2011-01-01
We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.
2010-04-13
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
The impact of doped silicon quantum dots on human osteoblasts
Czech Academy of Sciences Publication Activity Database
Ostrovská, L.; Brož, Antonín; Fučíková, A.; Bělinová, T.; Sugimoto, H.; Kanno, T.; Fujii, M.; Valenta, J.; Kalbáčová, M.H.
2016-01-01
Roč. 6, č. 68 (2016), s. 63403-63413 ISSN 2046-2069 Institutional support: RVO:67985823 Keywords : silicon quantum dots * osteoblasts * cytotoxicity * photoluminiscence bioimaging Subject RIV: EI - Biotechnology ; Bionics Impact factor: 3.108, year: 2016
CdS/CdSSe quantum dots in glass matrix
Indian Academy of Sciences (India)
Wintec
–5 nm are uniformly distributed into the glass matrix. Keywords. CdS; CdSSe; nanocrystals; glasses; optical filters. 1. Introduction. Today nanostructured materials and quantum dots have immense importance in the field of optoelectronics and.
Quantum Dots in the Therapy: Current Trends and Perspectives.
Pohanka, Miroslav
2017-01-01
Quantum dots are an emerging nanomaterial with broad use in technical disciplines; however, their application in the field of biomedicine becomes also relevant and significant possibilities have appeared since the discovery in 1980s. The current review is focused on the therapeutic applications of quantum dots which become an emerging use of the particles. They are introduced as potent carriers of drugs and as a material well suited for the diagnosis of disparate pathologies like visualization of cancer cells or pathogenic microorganisms. Quantum dots toxicity and modifications for the toxicity reduction are discussed here as well. Survey of actual papers and patents in the field of quantum dots use in the biomedicine is provided. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.
Multiple Wavelength Quantum Dot Lasers (MW-QDL)
National Aeronautics and Space Administration — An innovative method to achieve optical gain over a wide spectral range using new laser materials is being investigated. Multiple wavelength quantum dot lasers...
Electron Energy Level Statistics in Graphene Quantum Dots
De Raedt, H.; Katsnellson, M. I.; Katsnelson, M.I.
2008-01-01
Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the
Ultrafast gain and index dynamics in quantum dot amplifiers
DEFF Research Database (Denmark)
Borri, Paola; Langbein, Wolfgang; Mørk, Jesper
1999-01-01
The ultrafast dynamics of gain and refractive index in an InAs/GaAs quantum dot amplifier are investigated at room temperature. The gain is observed to recover with a 90 fs time constant, ruling out problems of slow carrier capture into the dots, and making this component promising for high...
On dephasing and spin decay in open quantum dots
Michaelis, Björn Dieter
2006-01-01
The thesis contains three topics on transport in nanostructres. Chpt. 2 explains the loss of entanglement in electronic pairs that enter chaotic quantum dots. The quantitiy that is affected are timedependent and spaceresolving current measurements. Looking at statisticcs dots, it is discovered
Controlling the quantum dot nucleation site
International Nuclear Information System (INIS)
Motta, Nunzio; Sgarlata, Anna; Rosei, Federico; Szkutnik, P.D.; Nufris, S.; Scarselli, M.; Balzarotti, A.
2003-01-01
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of semiconductors. In order to exploit the unique electronic properties of semiconductor QDs in novel quantum effect devices, the lateral dimensions of these structures have to be reduced to the order of tens of nanometers, which is the range of the De Broglie wavelength of electrons inside these materials. Moreover, millions of QDs must be arranged in dense ordered arrays to achieve the necessary active volume for optoelectronic applications. Nowadays it is possible to control size and shape of the nanocrystals, but it is still difficult to decide their nucleation site. Many approaches have been undertaken to overcome this problem, like using regular dislocation networks, lithographically and Atomic Force Microscopy (AFM) patterned substrates, naturally patterned surfaces. We present results obtained by some of these methods, visualized by Scanning Tunnelling Microscopy (STM) or AFM microscopy. STM measurements at high temperature during the epitaxial growth are of great help in these studies. Images and movies of the growth of Ge on Si help to identify the real nucleation sites of the islands and to follow their evolution. The influence of the 'step bunching' on the self-organization of Ge islands on Si(111) surfaces will be analysed, as an example of growth on self-nanostructured surfaces
Bismides: 2D structures and quantum dots
Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Stanionytė, Sandra; Pozingytė, Evelina; Skapas, Martynas; Selskis, Algirdas; Geižutis, Andrejus; Krotkus, Arūnas
2017-09-01
The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.
Cyto-molecular Tuning of Quantum Dots
Lee, Bong; Suresh, Sindhuja; Ekpenyong, Andrew
Quantum dots (QDs) are semiconductor nanoparticles composed of groups II-VI or III-V elements, with physical dimensions smaller than the exciton Bohr radius, and between 1-10 nm. Their applications and promising myriad applications in photovoltaic cells, biomedical imaging, targeted drug delivery, quantum computing, etc, have led to much research on their interactions with other systems. For biological systems, research has focused on biocompatibility and cytotoxicity of QDs in the context of imaging/therapy. However, there is a paucity of work on how biological systems might be used to tune QDs. Here, we hypothesize that the photo-electronic properties of QDs can be tuned by biological macromolecules following controlled changes in cellular activities. Using CdSe/ZnS core-shell QDs, we perform spectroscopic analysis of optically excited colloidal QDs with and without promyelocytic HL60 cells. Preliminary results show shifts in the emission spectra of the colloidal dispersions with and without cells. We will present results for activated HL60-derived cells where specific macromolecules produced by these cells perturb the electric dipole moments of the excited QDs and the associated electric fields, in ways that constitute what we describe as cyto-molecular tuning. Startup funds from the College of Arts and Sciences, Creighton University (to AEE).
Spin and edge channel dependent transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Ridder, T; Rogge, M C; Haug, R J [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Appelstrasse 2, D-30167 Hannover (Germany)], E-mail: ridder@nano.uni-hannover.de
2008-11-12
We investigate the influence of spin polarized currents and non-equilibrated edge channels on the transport properties of a single quantum dot. Polarized currents are realized by the manual depletion of edge channels in high magnetic fields via a metallic top gate covering the source contact in the system. We observe a suppression and enhancement in the conductance of the quantum dot dependent on the edge channel configuration in the leads.
Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells
Choi, Joshua J.
2011-06-03
Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots
DEFF Research Database (Denmark)
Rudner, Mark Spencer; Levitov, Leonid
2013-01-01
Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce......) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods....
On-chip generation and guiding of quantum light from a site-controlled quantum dot
International Nuclear Information System (INIS)
Jamil, Ayesha; Farrer, Ian; Griffiths, Jonathan P.; Jones, Geb A. C.; Ritchie, David A.; Skiba-Szymanska, Joanna; Kalliakos, Sokratis; Ward, Martin B.; Ellis, David J. P.; Shields, Andrew J.; Schwagmann, Andre; Brody, Yarden
2014-01-01
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device–scale arrays of quantum dots are formed by a two–step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the waveguide's exit is 12% ± 5% before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits
Si quantum dot structures and their applications
Shcherbyna, L.; Torchynska, T.
2013-06-01
This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.
Enhanced thermoelectric properties in boron nitride quantum-dot
Pan, Changning; Long, Mengqiu; He, Jun
We have investigated the ballistic thermoelectric properties in boron nitride quantum dots by using the nonequilibrium Green's function approach and the Landauer transport theory. The result shows that the phonon transport is substantially suppressed by the interface in the quantum dots. The resonant tunneling effect of electron leads to the fluctuations of the electronic conductance. It enhances significantly the Seebeck coefficient. Combined with the low thermal conductance of phonon, the high thermoelectric figure of merit ZT ∼0.78 can be obtained at room temperature T = 300 K and ZT ∼0.95 at low temperature T = 100 K. It is much higher than that of graphene quantum dots with the same geometry parameters, which is ZT ∼0.29 at room temperature T = 300 K and ZT ∼0.48 at low temperature T = 100 K. The underlying mechanism is that the boron nitride quantum dots possess higher thermopower and lower phonon thermal conductance than the graphene quantum dots. Thus the results indicate that the thermoelectric properties of boron nitride can be significantly enhanced by the quantum dot and are better than those of graphene.
Graphene quantum dots probed by scanning tunneling microscopy
Energy Technology Data Exchange (ETDEWEB)
Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)
2017-11-15
Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Colloidal quantum dot photovoltaics: The effect of polydispersity
Zhitomirsky, David
2012-02-08
The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.
Heparin conjugated quantum dots for in vitro imaging applications.
Maguire, Ciaran Manus; Mahfoud, Omar Kazem; Rakovich, Tatsiana; Gerard, Valerie Anne; Prina-Mello, Adriele; Gun'ko, Yurii; Volkov, Yuri
2014-11-01
In this work heparin-gelatine multi-layered cadmium telluride quantum dots (QDgel/hep) were synthesised using a novel 'one-pot' method. The QDs produced were characterised using various spectroscopic and physiochemical techniques. Suitable QDs were then selected and compared to thioglycolic acid stabilised quantum dots (QDTGA) and gelatine coated quantum dots (QDgel) for utilisation in in vitro imaging experiments on live and fixed permeabilised THP-1, A549 and Caco-2 cell lines. Exposure of live THP-1 cells to QDgel/hep resulted in localisation of the QDs to the nucleus of the cells. QDgel/hep show affinity for the nuclear compartment of fixed permeabilised THP-1 and A549 cells but remain confined to cytoplasm of fixed permeabilised Caco-2 cells. It is postulated that heparin binding to the CD11b receptor facilitates the internalisation of the QDs into the nucleus of THP-1 cells. In addition, the heparin layer may reduce the unfavourable thrombogenic nature of quantum dots observed in vivo. In this study, heparin conjugated quantum dots were found to have superior imaging properties compared to its native counterparts. The authors postulate that heparin binding to the CD11b receptor facilitates QD internalization to the nucleus, and the heparin layer may reduce the in vivo thrombogenic properties of quantum dots. Copyright © 2014 Elsevier Inc. All rights reserved.
Phonon induced pure dephasing process of excitonic state in colloidal semiconductor quantum dots
Huang, Tongyun; Han, Peng; Wang, Xinke; Feng, Shengfei; Sun, Wenfeng; Ye, Jiasheng; Zhang, Yan
2016-04-01
We present a theoretical study on the pure dephasing process of colloidal semiconductor quantum dots induced by lattice vibrations using continuum model calculations. By solving the time dependent Liouville-von Neumann equation, we present the ultrafast Rabi oscillations between excitonic state and virtual state via exciton-phonon interaction and obtain the pure dephasing time from the fast decayed envelope of the Rabi oscillations. The interaction between exciton and longitudinal optical phonon vibration is found to dominate the pure dephasing process and the dephasing time increases nonlinearly with the reduction of exciton-phonon coupling strength. We further find that the pure dephasing time of large quantum dots is more sensitive to temperature than small quantum dots.
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials.
Decker, Manuel; Staude, Isabelle; Shishkin, Ivan I; Samusev, Kirill B; Parkinson, Patrick; Sreenivasan, Varun K A; Minovich, Alexander; Miroshnichenko, Andrey E; Zvyagin, Andrei; Jagadish, Chennupati; Neshev, Dragomir N; Kivshar, Yuri S
2013-01-01
Metamaterials, artificial electromagnetic media realized by subwavelength nano-structuring, have become a paradigm for engineering electromagnetic space, allowing for independent control of both electric and magnetic responses of the material. Whereas most metamaterials studied so far are limited to passive structures, the need for active metamaterials is rapidly growing. However, the fundamental question on how the energy of emitters is distributed between both (electric and magnetic) interaction channels of the metamaterial still remains open. Here we study simultaneous spontaneous emission of quantum dots into both of these channels and define the control parameters for tailoring the quantum-dot coupling to metamaterials. By superimposing two orthogonal modes of equal strength at the wavelength of quantum-dot photoluminescence, we demonstrate a sharp difference in their interaction with the magnetic and electric metamaterial modes. Our observations reveal the importance of mode engineering for spontaneous emission control in metamaterials, paving a way towards loss-compensated metamaterials and metamaterial nanolasers.
Transmission through a quantum dot molecule embedded in an Aharonov-Bohm interferometer
Energy Technology Data Exchange (ETDEWEB)
Lovey, Daniel A; Gomez, Sergio S; Romero, Rodolfo H, E-mail: rhromero@exa.unne.edu.ar [Instituto de Modelado e Innovacion Tecnologica, CONICET, and Facultad de Ciencias Exactas y Naturales y Agrimensura, Universidad Nacional del Nordeste, Avenida Libertad 5500 (3400) Corrientes (Argentina)
2011-10-26
We study theoretically the transmission through a quantum dot molecule embedded in the arms of an Aharonov-Bohm four quantum dot ring threaded by a magnetic flux. The tunable molecular coupling provides a transmission pathway between the interferometer arms in addition to those along the arms. From a decomposition of the transmission in terms of contributions from paths, we show that antiresonances in the transmission arise from the interference of the self-energy along different paths and that application of a magnetic flux can produce the suppression of such antiresonances. The occurrence of a period of twice the quantum of flux arises at the opening of the transmission pathway through the dot molecule. Two different connections of the device to the leads are considered and their spectra of conductance are compared as a function of the tunable parameters of the model. (paper)
Transmission through a quantum dot molecule embedded in an Aharonov-Bohm interferometer
International Nuclear Information System (INIS)
Lovey, Daniel A; Gomez, Sergio S; Romero, Rodolfo H
2011-01-01
We study theoretically the transmission through a quantum dot molecule embedded in the arms of an Aharonov-Bohm four quantum dot ring threaded by a magnetic flux. The tunable molecular coupling provides a transmission pathway between the interferometer arms in addition to those along the arms. From a decomposition of the transmission in terms of contributions from paths, we show that antiresonances in the transmission arise from the interference of the self-energy along different paths and that application of a magnetic flux can produce the suppression of such antiresonances. The occurrence of a period of twice the quantum of flux arises at the opening of the transmission pathway through the dot molecule. Two different connections of the device to the leads are considered and their spectra of conductance are compared as a function of the tunable parameters of the model. (paper)
Dirac gap-induced graphene quantum dot in an electrostatic potential
Giavaras, G.; Nori, Franco
2011-04-01
A spatially modulated Dirac gap in a graphene sheet leads to charge confinement, thus enabling a graphene quantum dot to be formed without the application of external electric and magnetic fields [G. Giavaras and F. Nori, Appl. Phys. Lett. 97, 243106 (2010)]. This can be achieved provided the Dirac gap has a local minimum in which the states become localized. In this work, the physics of such a gap-induced dot is investigated in the continuum limit by solving the Dirac equation. It is shown that gap-induced confined states couple to the states introduced by an electrostatic quantum well potential. Hence the region in which the resulting hybridized states are localized can be tuned with the potential strength, an effect which involves Klein tunneling. The proposed quantum dot may be used to probe quasirelativistic effects in graphene, while the induced confined states may be useful for graphene-based nanostructures.
Gao, Jianbo; Fidler, Andrew F; Klimov, Victor I
2015-09-08
In carrier multiplication, the absorption of a single photon results in two or more electron-hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.
Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG-QDCFET)
Karmakar, Supriya
2014-10-01
This paper presents the implementation of quaternary logic circuits based on quantum dot gate-quantum dot channel field effect transistor (QDG-QDCFET). The super lattice structure in the quantum dot channel region of QDG-QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG-QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG-QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG-QDCFET.
High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.
Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-11-01
Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.
Rainbow Emission from an Atomic Transition in Doped Quantum Dots.
Hazarika, Abhijit; Pandey, Anshu; Sarma, D D
2014-07-03
Although semiconductor quantum dots are promising materials for displays and lighting due to their tunable emissions, these materials also suffer from the serious disadvantage of self-absorption of emitted light. The reabsorption of emitted light is a serious loss mechanism in practical situations because most phosphors exhibit subunity quantum yields. Manganese-based phosphors that also exhibit high stability and quantum efficiency do not suffer from this problem but in turn lack emission tunability, seriously affecting their practical utility. Here, we present a class of manganese-doped quantum dot materials, where strain is used to tune the wavelength of the dopant emission, extending the otherwise limited emission tunability over the yellow-orange range for manganese ions to almost the entire visible spectrum covering all colors from blue to red. These new materials thus combine the advantages of both quantum dots and conventional doped phosphors, thereby opening new possibilities for a wide range of applications in the future.
Universal parametric correlations of conductance peaks in quantum dots
International Nuclear Information System (INIS)
Alhassid, Y.; Attias, H.
1996-01-01
We compute the parametric correlation function of the conductance peaks in chaotic and weakly disordered quantum dots in the Coulomb blockade regime and demonstrate its universality upon an appropriate scaling of the parameter. For a symmetric dot we show that this correlation function is affected by breaking time-reversal symmetry but is independent of the details of the channels in the external leads. We derive a new scaling which depends on the eigenfunctions alone and can be extracted directly from the conductance peak heights. Our results are in excellent agreement with model simulations of a disordered quantum dot. copyright 1996 The American Physical Society
Coupled Quantum Fluctuations and Quantum Annealing
Hormozi, Layla; Kerman, Jamie
We study the relative effectiveness of coupled quantum fluctuations, compared to single spin fluctuations, in the performance of quantum annealing. We focus on problem Hamiltonians resembling the the Sherrington-Kirkpatrick model of Ising spin glass and compare the effectiveness of different types of fluctuations by numerically calculating the relative success probabilities and residual energies in fully-connected spin systems. We find that for a small class of instances coupled fluctuations can provide improvement over single spin fluctuations and analyze the properties of the corresponding class. Disclaimer: This research was funded by ODNI, IARPA via MIT Lincoln Laboratory under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.
Electronic transient processes and optical spectra in quantum dots for quantum computing
Czech Academy of Sciences Publication Activity Database
Král, Karel; Zdeněk, Petr; Khás, Zdeněk
2004-01-01
Roč. 3, č. 1 (2004), s. 17-25 ISSN 1536-125X R&D Projects: GA AV ČR IAA1010113 Institutional research plan: CEZ:AV0Z1010914 Keywords : depopulation * electronic relaxation * optical spectra * quantum dots * self-assembled quantum dots * upconversion Subject RIV: BE - Theoretical Physics Impact factor: 3.176, year: 2004
Nonequilibrium Transport through a Spinful Quantum Dot with Superconducting Leads
DEFF Research Database (Denmark)
Andersen, Brian Møller; Flensberg, Karsten; Koerting, Verena
2011-01-01
We study the nonlinear cotunneling current through a spinful quantum dot contacted by two superconducting leads. Applying a general nonequilibrium Green function formalism to an effective Kondo model, we study the rich variation in the IV characteristics with varying asymmetry in the tunnel...... coupling to source and drain electrodes. The current is found to be carried, respectively, by multiple Andreev reflections in the symmetric limit, and by spin-induced Yu-Shiba-Rusinov bound states in the strongly asymmetric limit. The interplay between these two mechanisms leads to qualitatively different...... IV characteristics in the crossover regime of intermediate symmetry, consistent with recent experimental observations of negative differential conductance and repositioned conductance peaks in subgap cotunneling spectroscopy....
Quantum Dot Luminescent Concentrator Cavity Exhibiting 30-fold Concentration
Energy Technology Data Exchange (ETDEWEB)
Bronstein, Noah D.; Yao, Yuan; Xu, Lu; O’Brien, Erin; Powers, Alexander S.; Ferry, Vivian E. [Department; Alivisatos, A. Paul [Materials; Nuzzo, Ralph G.
2015-08-21
Luminescent solar concentrators doped with CdSe/CdS quantum dots provide a potentially low-cost and high-performance alternative to costly high-band-gap III–V semiconductor materials to serve as a top junction in multijunction photovoltaic devices for efficient utilization of blue photons. In this study, a photonic mirror was coupled with such a luminescent waveguide to form an optical cavity where emitted luminescence was trapped omnidirectionally. By mitigating escape cone and scattering losses, 82% of luminesced photons travel the length of the waveguide, creating a concentration ratio of 30.3 for blue photons in a waveguide with a geometric gain of 61. Further, we study the photon transport inside the luminescent waveguide, showing unimpeded photon collection across the entire length of the waveguide.
Full counting statistics of a single-molecule quantum dot
Dong, Bing; Ding, G. H.; Lei, X. L.
2013-08-01
We investigate the full counting statistics of a single quantum dot strongly coupled to a local phonon and weakly tunnel connected to two metallic electrodes. By employing the generalized nonequilibrium Green-function method and the Lang-Firsov transformation, we derive an explicit analytical formula for the cumulant generating function, which makes one able to identify distinctly the elastic and inelastic contributions to the current and zero-frequency shot noise. We find that at zero temperature, the inelastic effect causes upward steps in the current and downward jumps in the noise at the bias voltages corresponding to the opening of the inelastic channels, which are ascribed to the vibration-induced complex dependencies of electronic self-energies on the energy and bias voltage. More interestingly, the Fano factor exhibits oscillatory behavior with increasing bias voltage and its minimum value is observed to be smaller than one-half.
Gate-tunable graphene quantum dot and Dirac oscillator
Belouad, Abdelhadi; Jellal, Ahmed; Zahidi, Youness
2016-02-01
We obtain the solution of the Dirac equation in (2 + 1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allows us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.
Soliton nanoantennas in two-dimensional arrays of quantum dots
Gligorić, G.; Maluckov, A.; Hadžievski, Lj; Slepyan, G. Ya; Malomed, B. A.
2015-06-01
We consider two-dimensional (2D) arrays of self-organized semiconductor quantum dots (QDs) strongly interacting with electromagnetic field in the regime of Rabi oscillations. The QD array built of two-level states is modelled by two coupled systems of discrete nonlinear Schrödinger equations. Localized modes in the form of single-peaked fundamental and vortical stationary Rabi solitons and self-trapped breathers have been found. The results for the stability, mobility and radiative properties of the Rabi modes suggest a concept of a self-assembled 2D soliton-based nano-antenna, which is stable against imperfections In particular, we discuss the implementation of such a nano-antenna in the form of surface plasmon solitons in graphene, and illustrate possibilities to control their operation by means of optical tools.
Annealing-induced change in quantum dot chain formation mechanism
Directory of Open Access Journals (Sweden)
Tyler D. Park
2014-12-01
Full Text Available Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.
Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study
Directory of Open Access Journals (Sweden)
Stephan Michael
2016-05-01
Full Text Available In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. Here, we study the influence of two important quantum-dot material parameters, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. However, by minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.
Thermoelectric properties of an interacting quantum dot based heat engine
Erdman, Paolo Andrea; Mazza, Francesco; Bosisio, Riccardo; Benenti, Giuliano; Fazio, Rosario; Taddei, Fabio
2017-06-01
We study the thermoelectric properties and heat-to-work conversion performance of an interacting, multilevel quantum dot (QD) weakly coupled to electronic reservoirs. We focus on the sequential tunneling regime. The dynamics of the charge in the QD is studied by means of master equations for the probabilities of occupation. From here we compute the charge and heat currents in the linear response regime. Assuming a generic multiterminal setup, and for low temperatures (quantum limit), we obtain analytical expressions for the transport coefficients which account for the interplay between interactions (charging energy) and level quantization. In the case of systems with two and three terminals we derive formulas for the power factor Q and the figure of merit Z T for a QD-based heat engine, identifying optimal working conditions which maximize output power and efficiency of heat-to-work conversion. Beyond the linear response we concentrate on the two-terminal setup. We first study the thermoelectric nonlinear coefficients assessing the consequences of large temperature and voltage biases, focusing on the breakdown of the Onsager reciprocal relation between thermopower and Peltier coefficient. We then investigate the conditions which optimize the performance of a heat engine, finding that in the quantum limit output power and efficiency at maximum power can almost be simultaneously maximized by choosing appropriate values of electrochemical potential and bias voltage. At last we study how energy level degeneracy can increase the output power.
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Energy Technology Data Exchange (ETDEWEB)
Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)
2016-05-23
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
Suppression of LO phonon scattering in Landau quantized quantum dots
Murdin, B. N.; Hollingworth, A. R.; Kamal-Saadi, M.; Kotitschke, R. T.; Ciesla, C. M.; Pidgeon, C. R.; Findlay, P. C.; Pellemans, H. P. M.; Langerak, Cjgm; Rowe, A. C.; Stradling, R. A.; Gornik, E.
1999-01-01
Picosecond time-resolved far-infrared measurements are presented of the scattering between conduction-band states in a doped quasi quantum dot. These states are created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well. A clear suppression of the cooling
Counted Sb donors in Si quantum dots
Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael
2015-03-01
Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
Selective targeting of microglia by quantum dots
Directory of Open Access Journals (Sweden)
Minami S Sakura
2012-01-01
Full Text Available Abstract Background Microglia, the resident immune cells of the brain, have been implicated in brain injury and various neurological disorders. However, their precise roles in different pathophysiological situations remain enigmatic and may range from detrimental to protective. Targeting the delivery of biologically active compounds to microglia could help elucidate these roles and facilitate the therapeutic modulation of microglial functions in neurological diseases. Methods Here we employ primary cell cultures and stereotaxic injections into mouse brain to investigate the cell type specific localization of semiconductor quantum dots (QDs in vitro and in vivo. Two potential receptors for QDs are identified using pharmacological inhibitors and neutralizing antibodies. Results In mixed primary cortical cultures, QDs were selectively taken up by microglia; this uptake was decreased by inhibitors of clathrin-dependent endocytosis, implicating the endosomal pathway as the major route of entry for QDs into microglia. Furthermore, inhibiting mannose receptors and macrophage scavenger receptors blocked the uptake of QDs by microglia, indicating that QD uptake occurs through microglia-specific receptor endocytosis. When injected into the brain, QDs were taken up primarily by microglia and with high efficiency. In primary cortical cultures, QDs conjugated to the toxin saporin depleted microglia in mixed primary cortical cultures, protecting neurons in these cultures against amyloid beta-induced neurotoxicity. Conclusions These findings demonstrate that QDs can be used to specifically label and modulate microglia in primary cortical cultures and in brain and may allow for the selective delivery of therapeutic agents to these cells.
Quantum dot mediated imaging of atherosclerosis
Energy Technology Data Exchange (ETDEWEB)
Jayagopal, Ashwath; Haselton, Frederick R [Department of Biomedical Engineering, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States); Su Yanru; Blakemore, John L; Linton, MacRae F; Fazio, Sergio [Department of Medicine, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States)], E-mail: rick.haselton@vanderbilt.edu
2009-04-22
The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE{sup -/-} mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.
Exciton coherence in semiconductor quantum dots
International Nuclear Information System (INIS)
Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Sasaki, Masahide; Kujiraoka, Mamiko; Ema, Kazuhiro
2009-01-01
The coherent dynamics of excitons in InAs quantum dots (QDs) was investigated in the telecommunication wavelength range using a transient four-wave mixing technique. The sample was fabricated on an InP(311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for obtaining a high S/N in the four-wave mixing measurements, although no high-sensitive heterodyne detection was carried out. The dephasing time and transition dipole moment were precisely estimated from the polarization dependence of signals, taking into account their anisotropic properties. The population lifetimes of the excitons were also measured by using a polarization-dependent pumpprobe technique. A quantitative comparison of these anisotropies demonstrates that in our QDs, non-radiative population relaxation, polarization relaxation and pure dephasing are considerably smaller than the radiative relaxation. A comparison of the results of the four-wave mixing and pump-probe measurements revealed that the pure dephasing could be directly estimated with an accuracy of greater than 0.1 meV by comparing the results of four-wave mixing and pump-probe measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Microwave mediated synthesis of semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Afrasiabi, Roodabeh; Sugunan, Abhilash; Shahid, Robina; Toprak, Muhammet S.; Muhammed, Mamoun [Division of Functional Materials, Royal Institute of Technology (KTH), Stockholm (Sweden)
2012-07-15
Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Quantum dot lasers: From promise to high-performance devices
Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.
2009-03-01
Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.
Folded-light-path colloidal quantum dot solar cells.
Koleilat, Ghada I
2013-01-01
Colloidal quantum dot photovoltaics combine low-cost solution processing with quantum size-effect tuning to match absorption to the solar spectrum. Rapid advances have led to certified solar power conversion efficiencies of over 7%. Nevertheless, these devices remain held back by a compromise in the choice of quantum dot film thickness, balancing on the one hand the need to maximize photon absorption, mandating a thicker film, and, on the other, the need for efficient carrier extraction, a consideration that limits film thickness. Here we report an architecture that breaks this compromise by folding the path of light propagating in the colloidal quantum dot solid. Using this method, we achieve a substantial increase in short-circuit current, ultimately leading to improved power conversion efficiency.
Simulating electron spin entanglement in a double quantum dot
Rodriguez-Moreno, M. A.; Hernandez de La Luz, A. D.; Meza-Montes, Lilia
2011-03-01
One of the biggest advantages of having a working quantum-computing device when compared with a classical one, is the exponential speedup of calculations. This exponential increase is based on the ability of a quantum system to create and operate on entangled states. In order to study theoretically the entanglement between two electron spins, we simulate the dynamics of two electron spins in an electrostatically-defined double quantum dot with a finite barrier height between the dots. Electrons are initially confined to separated quantum dots. Barrier height is varied and the spin entanglement as a function of this variation is investigated. The evolution of the system is simulated by using a numerical approach for solving the time-dependent Schrödinger equation for two particles. Partially supported by VIEP-BUAP.