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Sample records for correlated electron materials

  1. New correlated electron physics from new materials

    Energy Technology Data Exchange (ETDEWEB)

    Maple, M.B., E-mail: mbmaple@ucsd.ed [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA 92093 (United States); Baumbach, R.E.; Hamlin, J.J.; Zocco, D.A.; Taylor, B.J. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA 92093 (United States); Butch, N.P. [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742 (United States); Jeffries, J.R.; Weir, S.T. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Sales, B.C.; Mandrus, D.; McGuire, M.A.; Sefat, A.S.; Jin, R. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Vohra, Y.K. [Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294 (United States); Chu, J.-H.; Fisher, I.R. [Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, CA 94305 (United States)

    2009-10-15

    Many important advances in the physics of strongly correlated electron systems have been driven by the development of new materials: for instance the filled skutterudites MT{sub 4}X{sub 12} (M=alkali metal, alkaline earth, lanthanide, or actinide; T=Fe, Ru, or Os; X=P, As, or Sb), certain lanthanide and actinide intermetallic compounds such as URu{sub 2-x}Re{sub x}Si{sub 2} and CeTIn{sub 5} (T=Co, Rh, or Ir), and layered oxypnictides and related materials. These types of complex multinary d- and f-electron compounds have proven to be a vast reservoir of novel strongly correlated electron ground states and phenomena. In these materials, the occurrence of such a wide range of ground states and phenomena arises from a delicate interplay between competing interactions that can be tuned by partial or complete substitution of one element for another, as well as the application of pressure, and magnetic fields, resulting in rich and complex electronic phase diagrams in the hyperspace of temperature, chemical composition, pressure and magnetic field. It seems clear that this type of 'materials driven physics' will continue to play a central role in the development of the field of strongly correlated electron systems in the future, through the discovery of new materials that exhibit unexpected phenomena and experiments on known materials in an effort to optimize their physical properties and test relevant theories.

  2. Electronic Structure of Strongly Correlated Materials

    CERN Document Server

    Anisimov, Vladimir

    2010-01-01

    Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

  3. Dynamical simulations of strongly correlated electron materials

    Science.gov (United States)

    Kress, Joel; Barros, Kipton; Batista, Cristian; Chern, Gia-Wei; Kotliar, Gabriel

    We present a formulation of quantum molecular dynamics that includes electron correlation effects via the Gutzwiller method. Our new scheme enables the study of the dynamical behavior of atoms and molecules with strong electron interactions. The Gutzwiller approach goes beyond the conventional mean-field treatment of the intra-atomic electron repulsion and captures crucial correlation effects such as band narrowing and electron localization. We use Gutzwiller quantum molecular dynamics to investigate the Mott transition in the liquid phase of a single-band metal and uncover intriguing structural and transport properties of the atoms.

  4. STIR: Novel Electronic States by Gating Strongly Correlated Materials

    Science.gov (United States)

    2016-03-01

    understood, has long been the foundation for electronic devices. What if we could apply these techniques to a much broader range of materials ? This short...grant aimed at demonstrating such large potential modulations in correlated electron materials using a technique known as electrolyte gating. This...of Papers published in non peer-reviewed journals: Final Report: STIR: Novel Electronic States by Gating Strongly Correlated Materials Report Title

  5. Highlighting material structure with transmission electron diffraction correlation coefficient maps.

    Science.gov (United States)

    Kiss, Ákos K; Rauch, Edgar F; Lábár, János L

    2016-04-01

    Correlation coefficient maps are constructed by computing the differences between neighboring diffraction patterns collected in a transmission electron microscope in scanning mode. The maps are shown to highlight material structural features like grain boundaries, second phase particles or dislocations. The inclination of the inner crystal interfaces are directly deduced from the resulting contrast.

  6. LDA+DMFT Approach to Materials with Strong Electronic Correlations

    Energy Technology Data Exchange (ETDEWEB)

    Held, K; Nekrasov, I A; Keller, G; Eyert, V; Blumer, N; McMahan, A K; Scalettar, R T; Pruschke, T; Anisimov, V I; Volhardt, D

    2001-12-02

    LDA+DMFT is a novel computational technique for ab initio investigations of real materials with strongly correlated electrons, such as transition metals and their oxides. It combines the strength of conventional band structure theory in the local density approximation (LDA) with a modern many-body approach, the dynamical mean-field theory (DMFT). In the last few years LDA+DMFT has proved to be a powerful tool for the realistic modeling of strongly correlated electronic systems. In this paper the basic ideas and the set-up of the LDA+DMFT(X) approach, where X is the method used to solve the DMFT equations, are discussed. Results obtained with X=QMC (quantum Monte Carlo) and X=NCA (non-crossing approximation) are presented and compared. By means of the model system La{sub 1-x}Sr{sub x}TiO{sub 3} we show that the method X matters qualitatively and quantitatively. Furthermore, they discuss recent results on the Mott-Hubbard metal-insulator transition in the transition metal oxide V{sub 2}O{sub 3} and the {alpha}-{gamma} transition in the 4f-electron system Ce.

  7. Focused Research Group in Correlated Electron and Complex Materials

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziqiang [Boston College, Chestnut Hill, MA (United States)

    2016-02-17

    While the remarkable physical properties of correlated and complex electronic materials hold great promise for technological applications, one of the key values of the research in this field is its profound impact on fundamental physics. The transition metal oxides, pnictides, and chalcogenides play a key role and occupy an especially important place in this field. The basic reason is that the outer shell of transition metals contains the atomic d-orbitals that have small spatial extent, but not too small to behave as localized orbtials. These d-electrons therefore have a small wave function overlap in a solid, e.g. in an octahedral environment, and form energy bands that are relatively narrow and on the scale of the short-range intra-atomic Coulomb repulsion (Hubbard U). In this intermediate correlation regime lies the challenge of the many-body physics responsible for new and unconventional physical properties. The study of correlated electron and complex materials represents both the challenge and the vitality of condensed matter and materials physics and often demands close collaborations among theoretical and experimental groups with complementary techniques. Our team has a track record and a long-term research goal of studying the unusual complexities and emergent behaviors in the charge, spin, and orbital sectors of the transition metal compounds in order to gain basic knowledge of the quantum electronic states of matter. During the funding period of this grant, the team continued their close collaborations between theory, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy and made significant progress and contributions to the field of iron-based superconductors, copper-oxide high-temperature superconductors, triangular lattice transition metal oxide cobaltates, strontium ruthenates, spin orbital coupled iridates, as well as topological insulators and other topological quantum states of matter. These results include both new

  8. Strongly correlated electron materials. I. Theory of the quasiparticle structure

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Aguilar, F.; Costa-Quintana, J.; Puig-Puig, L. (Departamento de Fisica, Grupo de Electromagnetismo, Universidad Autonoma de Barcelona, Bellaterra, E-08193 Barcelona (Spain))

    1993-07-01

    In this paper we give a method for analyzing the renormalized electronic structure of the Hubbard systems. The first step is the determination of effective interactions from the random-phase approximation (RPA) and from an extended RPA (ERPA) that introduces vertex effects within the bubble polarization. The second step is the determination of the density of states deduced from the spectral functions. Its analysis leads us to conclude that these systems can exhibit three types of resonances in their electronic structures: the lower-, middle-, and upper-energy resonances. Furthermore, we analyze the conditions for which there is only one type of resonance and the causes that lead to the disappearance of the heavy-fermion state. We finally introduce the RPA and ERPA effective interactions within the strong-coupling theory and we give the conditions for obtaining coupling and superconductivity.

  9. Dynamical Mean-Field Theory of Electronic Correlations in Models and Materials

    Science.gov (United States)

    Vollhardt, Dieter

    2010-11-01

    The concept of electronic correlations plays an important role in modern condensed matter physics. It refers to interaction effects which cannot be explained within a static mean-field picture as provided by Hartree-Fock theory. Electronic correlations can have a very strong influence on the properties of materials. For example, they may turn a metal into an insulator (Mott-Hubbard metal-insulator transition). In these lecture notes I (i) introduce basic notions of the physics of correlated electronic systems, (ii) discuss the construction of mean-field theories by taking the limit of high lattice dimensions, (iii) explain the simplifications of the many-body perturbation theory in this limit which provide the basis for the formulation of a comprehensive mean-field theory for correlated fermions, the dynamical mean-field theory (DMFT), (v) derive the DMFT self-consistency equations, and (vi) apply the DMFT to investigate electronic correlations in models and materials.

  10. Self-amplified photo-induced gap quenching in a correlated electron material

    Science.gov (United States)

    Mathias, S.; Eich, S.; Urbancic, J.; Michael, S.; Carr, A. V.; Emmerich, S.; Stange, A.; Popmintchev, T.; Rohwer, T.; Wiesenmayer, M.; Ruffing, A.; Jakobs, S.; Hellmann, S.; Matyba, P.; Chen, C.; Kipp, L.; Bauer, M.; Kapteyn, H. C.; Schneider, H. C.; Rossnagel, K.; Murnane, M. M.; Aeschlimann, M.

    2016-10-01

    Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains--on a microscopic level--the extremely fast response of this material to ultrafast optical excitation.

  11. Investigation of real materials with strong electronic correlations by the LDA+DMFT method.

    Science.gov (United States)

    Anisimov, V I; Lukoyanov, A V

    2014-02-01

    Materials with strong electronic correlations are at the cutting edge of experimental and theoretical studies, capturing the attention of researchers for a great variety of interesting phenomena: metal-insulator, phase and magnetic spin transitions, `heavy fermion' systems, interplay between magnetic order and superconductivity, appearance and disappearance of local magnetic moments, and transport property anomalies. It is clear that the richness of physical phenomena for these compounds is a result of partially filled 3d, 4f or 5f electron shells with local magnetic moments preserved in the solid state. Strong interactions of d and f electrons with each other and with itinerant electronic states of the material are responsible for its anomalous properties. Electronic structure calculations for strongly correlated materials should explicitly take into account Coulombic interactions between d or f electrons. Recent advances in this field are related to the development of the LDA+DMFT method, which combines local density approximation (LDA) with dynamical mean-field theory (DMFT) to account for electronic correlation effects. In recent years, LDA+DMFT has allowed the successful treatment not only of simple systems but also of complicated real compounds. Nowadays, the LDA+DMFT method is the state-of-the-art tool for investigating correlated metals and insulators, spin and metal-insulator transitions (MIT) in transition-metal compounds in paramagnetic and magnetically ordered phases.

  12. Dynamical mean field theory-based electronic structure calculations for correlated materials.

    Science.gov (United States)

    Biermann, Silke

    2014-01-01

    We give an introduction to dynamical mean field approaches to correlated materials. Starting from the concept of electronic correlation, we explain why a theoretical description of correlations in spectroscopic properties needs to go beyond the single-particle picture of band theory.We discuss the main ideas of dynamical mean field theory and its use within realistic electronic structure calculations, illustrated by examples of transition metals, transition metal oxides, and rare-earth compounds. Finally, we summarise recent progress on the calculation of effective Hubbard interactions and the description of dynamical screening effects in solids.

  13. Strongly Correlated Materials

    OpenAIRE

    Morosan, Emilia; Natelson, Douglas; Nevidomskyy, Andriy H.; Si, Qimiao

    2013-01-01

    Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective ...

  14. Modeling electronic structure and spectroscopy in correlated materials and topological insulators

    Science.gov (United States)

    Wang, Yung Jui

    Current major topics in condensed matter physics mostly focus on the investigation of materials having exotic quantum phases. For instance, Z 2 topological insulators have novel quantum states, which are distinct from ordinary band insulators. Recent developments show that these nontrivial topological phases may provide a platform for creating new types of quasiparticles in real materials, such as Majorana fermions. In correlated systems, high-T c superconducting cuprates are complicated due to the richness of their phase diagram. Surprisingly, the discovery of iron pnictides demonstrates that high-Tc superconductivity related phenomena are not unique to copper oxide compounds. Many people believe that the better the understanding of the electronic structure of cuprates and iron pnictides, the higher chances to unveil the high temperature superconductivity mystery. Despite the fact that silicon is a fundamental element in modern semiconductor electronics technology, the chemical bonding properties of liquid silicon phase still remain a puzzle. A popular approach to investigate electronic structure of complex materials is combining the first principles calculation with an experimental light scattering probe. Particularly, Compton scattering probes the many body electronic ground state in the bulk of materials in terms of electron momentum density projected along a certain scattering direction, and inelastic x-ray scattering measures the dynamic structure factor S(q, o) which contains information about electronic density-density correlations. In this thesis, I study several selected materials based on first principles calculations of their electronic structures, the Compton profiles and the Lindhard susceptibility within the framework of density functional theory. Specifically, I will discuss the prediction of a new type of topological insulators in quaternary chalcogenide compounds of compositions I2-II-IV-VI 4 and in ternary famatinite compounds of compositions I3

  15. NATO Advanced Research Workshop on Electron Correlation in New Materials and Nanosystems

    CERN Document Server

    Scharnberg, Kurt

    2007-01-01

    The articles collected in this book cover a wide range of materials with extraordinary superconducting and magnetic properties. For many of the materials studied, strong electronic correlations provide a link between these two phenomena which were long thought to be highly antagonistic. Both the progress in our understanding of fundamental physical processes and the advances made towards the development of devices are reported here. The materials studied come in a variety of forms and shapes from bulk to epitaxial films, nano- and heterostructures down to those involving single molecules and double quantum dots. In some cases the structuring serves the study of bulk properties. More often it is the change of these properties with nanostructuring and the properties of different materials in close proximity with each other that are of key interest because of possible application of these materials or heterostructures to quantum computing and spintronics.

  16. Compositional phase stability of strongly correlated electron materials within DFT+U

    Science.gov (United States)

    Isaacs, Eric B.; Marianetti, Chris A.

    2017-01-01

    Predicting the compositional phase stability of strongly correlated electron materials is an outstanding challenge in condensed matter physics. In this work, we employ the density functional theory plus U (DFT +U ) formalism to address the effects of local correlations due to transition metal d electrons on compositional phase stability in the prototype phase stable and separating materials LixCoO2 and olivine LixFePO4 , respectively. We introduce a spectral decomposition of the DFT +U total energy, revealing the distinct roles of the filling and ordering of the d orbital correlated subspace. The on-site interaction U drives both of these very different materials systems towards phase separation, stemming from enhanced ordering of the d orbital occupancies in the x =0 and x =1 species, whereas changes in the overall filling of the d shell contribute negligibly. We show that DFT +U formation energies are qualitatively consistent with experiments for phase stable LixCoO2 , phase separating LixFePO4 , and phase stable LixCoPO4 . However, we find that charge ordering plays a critical role in the energetics at intermediate x , strongly dampening the tendency for the Hubbard U to drive phase separation. Most relevantly, the phase stability of Li1 /2CoO2 within DFT +U is qualitatively incorrect without allowing charge ordering, which is problematic given that neither charge ordering nor the band gap that it induces are observed in experiment. We demonstrate that charge ordering arises from the correlated subspace interaction energy as opposed to the double counting. Additionally, we predict the Li order-disorder transition temperature for Li1 /2CoO2 , demonstrating that the unphysical charge ordering within DFT +U renders the method problematic, often producing unrealistically large results. Our findings motivate the need for other advanced techniques, such as DFT plus dynamical mean-field theory, for total energies in strongly correlated materials.

  17. Advances in Ultrafast Control and Probing of Correlated-Electron Materials

    Energy Technology Data Exchange (ETDEWEB)

    Wall, Simon [Univ. of Oxford (United Kingdom). Clarendon Lab.; Rini, Matteo [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Dhesi, Sarnjeet S. [Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.; Schoenlein, Robert W. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Cavalleri, Andrea [Univ. of Oxford (United Kingdom). Clarendon Lab.; Univ. of Hamburg (Germany). Max Planck Research Dept. for Structural Dynamics

    2011-02-24

    Here in this paper, we present recent results on ultrafast control and probing of strongly correlated-electron materials. We focus on magnetoresistive manganites, applying excitation and probing wavelengths that cover the mid-IR to the soft X-rays. In analogy with near-equilibrium filling and bandwidth control of phase transitions, our approach uses both visible and mid-IR pulses to stimulate the dynamics by exciting either charges across electronic bandgaps or specific vibrational resonances. Lastly, x-rays are used to unambiguously measure the microscopic electronic, orbital, and structural dynamics. Our experiments dissect and separate the nonequilibrium physics of these compounds, revealing the complex interplay and evolution of spin, lattice, charge, and orbital degrees of freedoms in the time domain.

  18. Strongly correlated materials.

    Science.gov (United States)

    Morosan, Emilia; Natelson, Douglas; Nevidomskyy, Andriy H; Si, Qimiao

    2012-09-18

    Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective and offer possibilities for technological applications. This article looks at these materials through the lens of research performed at Rice University. Topics examined include: Quantum phase transitions and quantum criticality in "heavy fermion" materials and the iron pnictide high temperature superconductors; computational ab initio methods to examine strongly correlated materials and their interface with analytical theory techniques; layered dichalcogenides as example correlated materials with rich phases (charge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressure, and magnetic field; and nanostructure methods applied to the correlated oxides VO₂ and Fe₃O₄, where metal-insulator transitions can be manipulated by doping at the nanoscale or driving the system out of equilibrium. We conclude with a discussion of the exciting prospects for this class of materials.

  19. Electronic materials

    CERN Document Server

    Kwok, H L

    2010-01-01

    The electronic properties of solids have become of increasing importance in the age of information technology. The study of solids and materials, while having originated from the disciplines of physics and chemistry, has evolved independently over the past few decades. The classical treatment of solid-state physics, which emphasized classifications, theories and fundamental physical principles, is no longer able to bridge the gap between materials advances and applications. In particular, the more recent developments in device physics and technology have not necessarily been driven by new conc

  20. STEM in Kondo Lattices: a new window on correlated electron materials

    Science.gov (United States)

    Coleman, Piers

    2012-02-01

    The tremendous developments in scanning tunneling electron spectroscopy over the past decade, applied with tremendous success to the cuprate superconductors, are now beginning to be applied to other strongly correlated electron systems. One area where they offer tremendous potential, is in the context of heavy fermion materials. In the last few years, it has become possible to start probing the physics of the Kondo lattice using STEM methods. In this talk I will review this field, discussing the physics of tunneling into the Kondo lattice, showing how tunneling involves a co-operative process of electron transfer and spin-flip, called ``cotunnelling'' [1,2]. I will provide an overview of latest results in this field, especially URu2Si2 [3,4], YbRh2Si2 [5] and CeCoIn5 [6], discussing how STEM can be used to probe various new theoretical proposals [7,8] for the exotic order and critical behavior. [4pt] [1] M. Maltseva, M. Dzero, and P. Coleman, Phys. Rev. Lett. 103, 206402 (2009).[0pt] [2] J. Figgins and D. Morr, Phys. Rev. Lett. 104, 187202 (2010).[0pt] [3] A. R. Schmidt et al, Nature 465, 570-576 (2010).[0pt] [4] P. Aynajian et al., Proc. Natl. Acad. Sci. U.S.A. 107, 10383 (2010).[0pt] [5] S. Ernst et al, Nature (2011).[0pt] [6] S. Ernst et al, Physica Status Solidi 247, 624 (2010).[0pt] [7] Y. Dubi and A.V. Balatsky, Phys. Rev. Lett. 106, 196407 (2011).[0pt] [8] P. Chandra, P. Coleman and R. Flint, to be published (2012).

  1. Electronic Correlation Strength of Pu

    DEFF Research Database (Denmark)

    Svane, A.; C. Albers, R.; E. Christensen, N.

    2013-01-01

    A new electronic quantity, the correlation strength, is defined as a necessary step for understanding the properties and trends in strongly correlated electronic materials. As a test case, this is applied to the different phases of elemental Pu. Within the GW approximation we have surprisingly...... found a "universal" scaling relationship, where the f-electron bandwidth reduction due to correlation effects is shown to depend only upon the local density approximation (LDA) bandwidth and is otherwise independent of crystal structure and lattice constant....

  2. Electronic Correlation Strength of Pu

    DEFF Research Database (Denmark)

    Svane, A.; C. Albers, R.; E. Christensen, N.

    2013-01-01

    A new electronic quantity, the correlation strength, is defined as a necessary step for understanding the properties and trends in strongly correlated electronic materials. As a test case, this is applied to the different phases of elemental Pu. Within the GW approximation we have surprisingly...... found a "universal" scaling relationship, where the f-electron bandwidth reduction due to correlation effects is shown to depend only upon the local density approximation (LDA) bandwidth and is otherwise independent of crystal structure and lattice constant....

  3. Computation of electronic structure and magnetic properties of strongly correlated materials with LDA+DMFT method

    Science.gov (United States)

    Skornyakov, S. L.; Anisimov, V. I.

    2015-04-01

    In this review, we describe general ideas of the LDA+DMFT method which merges dynamical mean-field theory (DMFT) and density functional theory (in particular the local density approximation (LDA)). Nowadays, the LDA+DMFT computational scheme is the most powerful numerical tool for studying physical properties of real materials and chemical compounds. It incorporates the advantage of DMFT to treat the full range of local dynamical Coulomb correlations and the ability of band methods to describe material-specific band dispersion caused by the lattice periodicity. We briefly discuss underlying physical ideas of LDA+DMFT and its mathematical implementation. Then different algorithms applied to solution of the DMFT impurity problem are briefly described. We then give examples of successful applications of the LDA+DMFT method to study spectral and magnetic properties of recently synthesized compounds like pnictide superconductors as well as classic charge-transfer systems NiO and MnO.

  4. PREFACE: Correlated Electrons (Japan)

    Science.gov (United States)

    Miyake, Kazumasa

    2007-03-01

    This issue of Journal of Physics: Condensed Matter is dedicated to results in the field of strongly correlated electron systems under multiple-environment. The physics of strongly correlated electron systems (SCES) has attracted much attention since the discovery of superconductivity in CeCu_2 Si_2 by Steglich and his co-workers a quater-century ago. Its interest has been intensified by the discovery of high-Tc superconductivity in a series of cuprates with layered perovskite structure which are still under active debate. The present issue of Journal of Physics: Condensed Matter present some aspects of SCES physics on the basis of activities of a late project "Centre-Of-Excellence" supported by MEXT (Ministry of Education, Sports, Science, Culture and Technology of the Japanese Government). This project has been performed by a condensed matter physics group in the faculties of science and engineering science of Osaka University. Although this project also covers correlated phenomena in optics and nano-scale systems, we focus here on the issues of SCES related to superconductivity, mainly unconventional. The present issue covers the discussions on a new mechanism of superconductivity with electronic origin (critical valence fluctuation mechanism), interplay and unification of magnetism and superconductivity in SCES based on a systematic study of NQR under pressure, varieties of Fermi surface of Ce- and U-based SCES probed by the de Haas-van Alphen effect, electronic states probed by a bulk sensitive photoemission spectroscopy with soft X-ray, pressure induced superconductivity of heavy electron materials, pressure dependence of superconducting transition temperature based on a first-principle calculation, and new superconductors under very high-pressure. Some papers offer readers' reviews of the relevant fields and/or include new developments of this intriguing research field of SCES. Altogether, the papers within this issue outline some aspects of electronic states

  5. Electron correlation in molecules

    CERN Document Server

    Wilson, S

    2007-01-01

    Electron correlation effects are of vital significance to the calculation of potential energy curves and surfaces, the study of molecular excitation processes, and in the theory of electron-molecule scattering. This text describes methods for addressing one of theoretical chemistry's central problems, the study of electron correlation effects in molecules.Although the energy associated with electron correlation is a small fraction of the total energy of an atom or molecule, it is of the same order of magnitude as most energies of chemical interest. If the solution of quantum mechanical equatio

  6. Investigations on Electronic Materials

    OpenAIRE

    E. Pugnor; T. Kormány

    1982-01-01

    Electronics has been described as a materials oriented technology. In this sense a short review is given concerning: the connection of materials characterization to the design and processing of electronic components; the most important materials characterization methods used for electronic materials; the strategy of organizing a complete material characterization system for selected electronic components.

  7. Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials

    Energy Technology Data Exchange (ETDEWEB)

    Kaindl, Robert A.; Averitt, Richard D.

    2006-11-14

    Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale

  8. Electron correlation in beryllium

    DEFF Research Database (Denmark)

    Omiste, Juan J.; Li, Wenliang; Madsen, Lars Bojer

    2017-01-01

    We apply a three-dimensional implementation of the time-dependent restricted-active-space self-consistent-field (TD-RASSCF) method to investigate effects of electron correlation in the ground state of Be as well as in its photoionization dynamics by short XUV pulses, including time delay in photo......We apply a three-dimensional implementation of the time-dependent restricted-active-space self-consistent-field (TD-RASSCF) method to investigate effects of electron correlation in the ground state of Be as well as in its photoionization dynamics by short XUV pulses, including time delay...... schemes, and in this way we identify the orbital spaces that are relevant for an accurate description of the photoelectron spectra. Finally, we investigate the effects of electron correlation on the magnitude of the relative Eisenbud-Wigner-Smith (EWS) time delay in the photoionization process into two...... different ionic channels. One channel, the ground-state channel in the ion, is accessible without electron correlation. The other channel is only accessible when including electron correlation. For theory beyond the mean-field time-dependent Hartree-Fock, the EWS time delay for the photon energy analyzed...

  9. Electronics materials research

    Science.gov (United States)

    1982-01-01

    The electronic materials and is aimed at the establishment of quantitative relationships underlying crystal growth parameters, materials properties, electronic characteristics and device applications. The overall program evolves about the following main thrust areas: (1) crystal growth novel approaches to engineering of semiconductor materials; (2) investigation of materials properties and electronic characteristics on a macro and microscale; (3) surface properties and surface interactions with the bulk and ambients; (4) electronic properties controlling device applications and device performance.

  10. Modern electronic materials

    CERN Document Server

    Watkins, John B

    2013-01-01

    Modern Electronic Materials focuses on the development of electronic components. The book first discusses the history of electronic components, including early developments up to 1900, developments up to World War II, post-war developments, and a comparison of present microelectric techniques. The text takes a look at resistive materials. Topics include resistor requirements, basic properties, evaporated film resistors, thick film resistors, and special resistors. The text examines dielectric materials. Considerations include basic properties, evaporated dielectric materials, ceramic dielectri

  11. PREFACE: Strongly correlated electron systems Strongly correlated electron systems

    Science.gov (United States)

    Saxena, Siddharth S.; Littlewood, P. B.

    2012-07-01

    This special section is dedicated to the Strongly Correlated Electron Systems Conference (SCES) 2011, which was held from 29 August-3 September 2011, in Cambridge, UK. SCES'2011 is dedicated to 100 years of superconductivity and covers a range of topics in the area of strongly correlated systems. The correlated electronic and magnetic materials featured include f-electron based heavy fermion intermetallics and d-electron based transition metal compounds. The selected papers derived from invited presentations seek to deepen our understanding of the rich physical phenomena that arise from correlation effects. The focus is on quantum phase transitions, non-Fermi liquid phenomena, quantum magnetism, unconventional superconductivity and metal-insulator transitions. Both experimental and theoretical work is presented. Based on fundamental advances in the understanding of electronic materials, much of 20th century materials physics was driven by miniaturisation and integration in the electronics industry to the current generation of nanometre scale devices. The achievements of this industry have brought unprecedented advances to society and well-being, and no doubt there is much further to go—note that this progress is founded on investments and studies in the fundamentals of condensed matter physics from more than 50 years ago. Nevertheless, the defining challenges for the 21st century will lie in the discovery in science, and deployment through engineering, of technologies that can deliver the scale needed to have an impact on the sustainability agenda. Thus the big developments in nanotechnology may lie not in the pursuit of yet smaller transistors, but in the design of new structures that can revolutionise the performance of solar cells, batteries, fuel cells, light-weight structural materials, refrigeration, water purification, etc. The science presented in the papers of this special section also highlights the underlying interest in energy-dense materials, which

  12. A United Effort for Crystal Growth, Neutron Scattering, and X-ray Scattering Studies of Novel Correlated Electron Materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Young S. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2015-02-12

    The research accomplishments during the award involved experimental studies of correlated electron systems and quantum magnetism. The techniques of crystal growth, neutron scattering, x-ray scattering, and thermodynamic & transport measurements were employed, and graduate students and postdoctoral research associates were trained in these techniques.

  13. Advances in electronic materials

    CERN Document Server

    Kasper, Erich; Grimmeiss, Hermann G

    2008-01-01

    This special-topic volume, Advances in Electronic Materials, covers various fields of materials research such as silicon, silicon-germanium hetero-structures, high-k materials, III-V semiconductor alloys and organic materials, as well as nano-structures for spintronics and photovoltaics. It begins with a brief summary of the formative years of microelectronics; now the keystone of information technology. The latter remains one of the most important global technologies, and is an extremely complex subject-area. Although electronic materials are primarily associated with computers, the internet

  14. Rare earth monopnictides and monochalcogenides from first principles: towards an electronic phase diagram of strongly correlated materials

    DEFF Research Database (Denmark)

    Petit, Leon; Tyer, R.; Szotek, Z.

    2010-01-01

    We present the results of an ab initio study of the electronic structure of 140 rare earth compounds. Specifically, we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions...... and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant versus localized, and high...... calculated to within ~1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications....

  15. Electron Beam Materials Irradiators

    Science.gov (United States)

    Cleland, Marshall R.

    2012-06-01

    Radiation processing is a well established method for enhancing the properties of materials and commercial products by treating them with ionizing energy in the form of high-energy electrons, X-rays, and gamma rays. Beneficial effects include polymerizing, cross-linking, grafting and degrading plastics, sterilizing single-use medical devices, disinfecting and disinfesting fresh foods, purifying drinking water, treating wastewater and other toxic waste materials that harm the environment, and many other applications that are still being evaluated. Industrial electron accelerators of several types have been developed and are being used for these applications. More than 1800 electron accelerators are presently installed in facilities worldwide for these purposes.

  16. Electron correlations in quantum dots

    CERN Document Server

    Tipton, D L J

    2001-01-01

    Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining p...

  17. EDITORIAL: Strongly correlated electron systems Strongly correlated electron systems

    Science.gov (United States)

    Ronning, Filip; Batista, Cristian

    2011-03-01

    during SCES 2010. As we learned, past dogmas about strongly correlated materials and phenomena must be re-examined with an open and inquisitive mind. Invited speakers and respected leaders in the field were invited to contribute to this special issue and we have insisted that they present new data, ideas, or perspectives, as opposed to simply an overview of their past work. As with the conference, this special issue touches upon recent developments of strongly correlated electron systems in d-electron materials, such as Sr3Ru2O7, graphene, and the new Fe-based superconductors, but it is dominated by topics in f-electron compounds. Contributions reflect the growing appreciation for the influence of disorder and frustration, the need for organizing principles, as well as detailed investigations on particular materials of interest and, of course, new materials. As this special issue could not possibly capture the full breadth and depth that the conference had to offer, it is being published simultaneously with an issue of Journal of Physics: Conference Series containing 157 manuscripts in which all poster presenters at SCES 2010 were invited to contribute. Since this special issue grew out of the 2010 SCES conference, we take this opportunity to give thanks. This conference would not have been possible without the hard work of the SCES 2010 Program Committee, International and National Advisory Committees, Local Committee, and conference organizers, the New Mexico Consortium. We thank them as well as those organizations that generously provided financial support: ICAM-I2CAM, Quantum Design, Lakeshore, the National High Magnetic Field Laboratory and the Department of Energy National Laboratories at Argonne, Berkeley, Brookhaven, Los Alamos and Oak Ridge. Of course, we especially thank the participants for bringing new ideas and new results, without which SCES 2010 would not have been possible. Strongly correlated electron systems contents Spin-orbit coupling and k

  18. Ultrafast dynamics of correlated electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rettig, Laurenz

    2012-07-09

    This work investigates the ultrafast electron dynamics in correlated, low-dimensional model systems using femtosecond time- and angle-resolved photoemission spectroscopy (trARPES) directly in the time domain. In such materials, the strong electron-electron (e-e) correlations or coupling to other degrees of freedom such as phonons within the complex many-body quantum system lead to new, emergent properties that are characterized by phase transitions into broken-symmetry ground states such as magnetic, superconducting or charge density wave (CDW) phases. The dynamical processes related to order like transient phase changes, collective excitations or the energy relaxation within the system allow deeper insight into the complex physics governing the emergence of the broken-symmetry state. In this work, several model systems for broken-symmetry ground states and for the dynamical charge balance at interfaces have been studied. In the quantum well state (QWS) model system Pb/Si(111), the charge transfer across the Pb/Si interface leads to an ultrafast energetic stabilization of occupied QWSs, which is the result of an increase of the electronic confinement to the metal film. In addition, a coherently excited surface phonon mode is observed. In antiferromagnetic (AFM) Fe pnictide compounds, a strong momentum-dependent asymmetry of electron and hole relaxation rates allows to separate the recovery dynamics of the AFM phase from electron-phonon (e-ph) relaxation. The strong modulation of the chemical potential by coherent phonon modes demonstrates the importance of e-ph coupling in these materials. However, the average e-ph coupling constant is found to be small. The investigation of the excited quasiparticle (QP) relaxation dynamics in the high-T{sub c}4 superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} reveals a striking momentum and fluence independence of the QP life times. In combination with the momentum-dependent density of excited QPs, this demonstrates the

  19. Nanostructure studies of strongly correlated materials.

    Science.gov (United States)

    Wei, Jiang; Natelson, Douglas

    2011-09-01

    Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

  20. Correlated Electrons in Reduced Dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Bonesteel, Nicholas E [Florida State Univ., Tallahassee, FL (United States)

    2015-01-31

    This report summarizes the work accomplished under the support of US DOE grant # DE-FG02-97ER45639, "Correlated Electrons in Reduced Dimensions." The underlying hypothesis of the research supported by this grant has been that studying the unique behavior of correlated electrons in reduced dimensions can lead to new ways of understanding how matter can order and how it can potentially be used. The systems under study have included i) fractional quantum Hall matter, which is realized when electrons are confined to two-dimensions and placed in a strong magnetic field at low temperature, ii) one-dimensional chains of spins and exotic quasiparticle excitations of topologically ordered matter, and iii) electrons confined in effectively ``zero-dimensional" semiconductor quantum dots.

  1. Spectroscopic Imaging of Strongly Correlated Electronic States

    Science.gov (United States)

    Yazdani, Ali; da Silva Neto, Eduardo H.; Aynajian, Pegor

    2016-03-01

    The study of correlated electronic systems from high-Tc cuprates to heavy-fermion systems continues to motivate the development of experimental tools to probe electronic phenomena in new ways and with increasing precision. In the past two decades, spectroscopic imaging with scanning tunneling microscopy has emerged as a powerful experimental technique. The combination of high energy and spatial resolutions provided by this technique reveals unprecedented detail of the electronic properties of strongly correlated metals and superconductors. This review examines specific experiments, theoretical concepts, and measurement methods that have established the application of these techniques to correlated materials. A wide range of applications, such as the study of collective responses to single atomic impurities, the characterization of quasiparticle-like excitations through their interference, and the identification of competing electronic phases using spectroscopic imaging, are discussed.

  2. Correlative fluorescence and electron microscopy.

    Science.gov (United States)

    Schirra, Randall T; Zhang, Peijun

    2014-10-01

    Correlative fluorescence and electron microscopy (CFEM) is a multimodal technique that combines dynamic and localization information from fluorescence methods with ultrastructural data from electron microscopy, to give new information about how cellular components change relative to the spatiotemporal dynamics within their environment. In this review, we will discuss some of the basic techniques and tools of the trade for utilizing this attractive research method, which is becoming a very powerful tool for biology labs. The information obtained from correlative methods has proven to be invaluable in creating consensus between the two types of microscopy, extending the capability of each, and cutting the time and expense associated with using each method separately for comparative analysis. The realization of the advantages of these methods in cell biology has led to rapid improvement in the protocols and has ushered in a new generation of instruments to reach the next level of correlation--integration.

  3. Characterization of advanced electronic materials

    Energy Technology Data Exchange (ETDEWEB)

    Arko, A.J.; Heffner, R.H.; Hundley, M.F. [and others

    1997-08-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Our goal has been to extend the Laboratory`s competency in nuclear and advanced materials by characterizing (measuring and interpreting) physical properties of advanced electronic materials and in this process to bridge the gap between materials synthesis and theoretical understanding. Attention has focused on discovering new physics by understanding the ground states of materials in which electronic correlations dominate their properties. Among several accomplishments, we have discovered and interpreted pressure-induced superconductivity in CeRh{sub 2}Si{sub 2}, boron content in UBe{sub 13-x}B{sub x} and the origin of small gaps in the spin and charge excitation spectra of Ce{sub 3}Bi{sub 4}Pt{sub 3}, and we provided seminal understanding of large magnetoresistive effects in La{sub 1-x}Ca{sub x}MnO{sub 3}. This work has established new research directions at LANL and elsewhere, involved numerous collaborators from throughout the world and attracted several postdoctoral fellows.

  4. Correlated electrons in quantum matter

    CERN Document Server

    Fulde, Peter

    2012-01-01

    An understanding of the effects of electronic correlations in quantum systems is one of the most challenging problems in physics, partly due to the relevance in modern high technology. Yet there exist hardly any books on the subject which try to give a comprehensive overview on the field covering insulators, semiconductors, as well as metals. The present book tries to fill that gap. It intends to provide graduate students and researchers a comprehensive survey of electron correlations, weak and strong, in insulators, semiconductors and metals. This topic is a central one in condensed matter and beyond that in theoretical physics. The reader will have a better understanding of the great progress which has been made in the field over the past few decades.

  5. Nanostructured electronic and magnetic materials

    Indian Academy of Sciences (India)

    R V Ramanujan

    2003-02-01

    Research and development in nanostructured materials is one of the most intensely studied areas in science. As a result of concerted R & D efforts, nanostructured electronic and magnetic materials have achieved commercial success. Specific examples of novel industrially important nanostructured electronic and magnetic materials are provided. Advantages of nanocrystalline magnetic materials in the context of both materials and devices are discussed. Several high technology examples of the use of nanostructured magnetic materials are presented. Methods of processing nanostructured materials are described and the examples of sol gel, rapid solidification and powder injection moulding as potential processing methods for making nanostructured materials are outlined. Some opportunities and challenges are discussed.

  6. Electron correlation in molecules and condensed phases

    CERN Document Server

    March, N H

    1996-01-01

    This reference describes the latest research on correlation effects in the multicenter problems of atoms, molecules, and solids The author utilizes first- and second-order matrices, including the important observable electron density rho(r), and the Green function for discussing quantum computer simulations With its focus on concepts and theories, this volume will benefit experimental physicists, materials scientists, and physical and inorganic chemists as well as graduate students

  7. Electron correlation energies in atoms

    Science.gov (United States)

    McCarthy, Shane Patrick

    This dissertation is a study of electron correlation energies Ec in atoms. (1) Accurate values of E c are computed for isoelectronic sequences of "Coulomb-Hooke" atoms with varying mixtures of Coulombic and Hooke character. (2) Coupled-cluster calculations in carefully designed basis sets are combined with fully converged second-order Moller-Plesset perturbation theory (MP2) computations to obtain fairly accurate, non-relativistic Ec values for the 12 closed-shell atoms from Ar to Rn. The complete basis-set (CBS) limits of MP2 energies are obtained for open-shell atoms by computations in very large basis sets combined with a knowledge of the MP2/CBS limit for the next larger closed-shell atom with the same valence shell structure. Then higher-order correlation corrections are found by coupled-cluster calculations using basis sets that are not quite as large. The method is validated for the open-shell atoms from Al to Cl and then applied to get E c values, probably accurate to 3%, for the 4th-period open-shell atoms: K, Sc-Cu, and Ga-Br. (3) The results show that, contrary to quantum chemical folklore, MP2 overestimates |Ec| for atoms beyond Fe. Spin-component scaling arguments are used to provide a simple explanation for this overestimation. (4) Eleven non-relativistic density functionals, including some of the most widely-used ones, are tested on their ability to predict non-relativistic, electron correlation energies for atoms and their cations. They all lead to relatively poor predictions for the heavier atoms. Several novel, few-parameter, density functionals for the correlation energy are developed heuristically. Four new functionals lead to improved predictions for the 4th-period atoms without unreasonably compromising accuracy for the lighter atoms. (5) Simple models describing the variation of E c with atomic number are developed.

  8. Global Method for Electron Correlation

    Science.gov (United States)

    Piris, Mario

    2017-08-01

    The current work presents a new single-reference method for capturing at the same time the static and dynamic electron correlation. The starting point is a determinant wave function formed with natural orbitals obtained from a new interacting-pair model. The latter leads to a natural orbital functional (NOF) capable of recovering the complete intrapair, but only the static interpair correlation. Using the solution of the NOF, two new energy functionals are defined for both dynamic (Edyn) and static (Esta) correlation. Edyn is derived from a modified second-order Møller-Plesset perturbation theory (MP2), while Esta is obtained from the static component of the new NOF. Double counting is avoided by introducing the amount of static and dynamic correlation in each orbital as a function of its occupation. As a result, the total energy is represented by the sum E˜ HF+Edyn+Esta , where E˜ HF is the Hartree-Fock energy obtained with natural orbitals. The new procedure called NOF-MP2 scales formally as O (M5) (where M is the number of basis functions), and is applied successfully to the homolytic dissociation of a selected set of diatomic molecules, paradigmatic cases of near-degeneracy effects. The size consistency has been numerically demonstrated for singlets. The values obtained are in good agreement with the experimental data.

  9. Electron-gamma directional correlations; Correlations directionnelles electron-gamma

    Energy Technology Data Exchange (ETDEWEB)

    Gerholm, T.R. [Commissariat a l' Energie Atomique, Centre d' Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France)

    1966-10-01

    The theory of the angular correlation between conversion electrons and gamma rays is briefly outlined. The experimental methods used for the study of the electron-gamma correlation are described. The effects of the formation of a hole and the hyperfine structure magnetic coupling dependent on time are then considered. The experimental results showed that the attenuations found for different metallic media plainly conform to a simple quadrupolar interaction mechanism. For a source surrounded by an insulator, however, the results show that a rapidly disappearing coupling occurs as a supplement to the quadrupolar interaction mechanism. This coupling attenuates the angular correlation by about 75% of the non-perturbed value. It was concluded that for an intermediate half life of the level of the order of the nanosecond, the attenuations produced by the secondary effects of the hole formation can not be completely neglected. The metallic media considered were Ag, Au, Al, and Ga. In the study of E2 conversion processes, the radical matrix elements governing the E2 conversion process in the 412-KeV transition of {sup 198}Hg were determined. The results exclude the presence of dynamic contributions within the limits of experimental error. The values b{sub 2} (E2) and {alpha}-k (E2) obtained indirectly from the experimentally determined b{sub 4} particle parameter are in complete agreement with the theoretical values obtained by applying the corrections due to the shielding effect and to the finite dimension of the nucleus and excluding the dynamic contributions. The value for the internal conversion coefficient was also in good agreement. Experimental results from the intensity ratios between the peak and the continuum, however, seem to show significant deviations with respect to other experimental and theoretical values. There is good agreement between experimental and theoretical results on the internal conversion of {sup 203}Tl, {sup 201}Tl, and {sup 181}Ta. The theory

  10. Nanoscale electrodynamics of strongly correlated quantum materials

    Science.gov (United States)

    Liu, Mengkun; Sternbach, Aaron J.; Basov, D. N.

    2017-01-01

    Electronic, magnetic, and structural phase inhomogeneities are ubiquitous in strongly correlated quantum materials. The characteristic length scales of the phase inhomogeneities can range from atomic to mesoscopic, depending on their microscopic origins as well as various sample dependent factors. Therefore, progress with the understanding of correlated phenomena critically depends on the experimental techniques suitable to provide appropriate spatial resolution. This requirement is difficult to meet for some of the most informative methods in condensed matter physics, including infrared and optical spectroscopy. Yet, recent developments in near-field optics and imaging enabled a detailed characterization of the electromagnetic response with a spatial resolution down to 10 nm. Thus it is now feasible to exploit at the nanoscale well-established capabilities of optical methods for characterization of electronic processes and lattice dynamics in diverse classes of correlated quantum systems. This review offers a concise description of the state-of-the-art near-field techniques applied to prototypical correlated quantum materials. We also discuss complementary microscopic and spectroscopic methods which reveal important mesoscopic dynamics of quantum materials at different energy scales.

  11. Electronic Correlations in Electron Transfer Systems

    Science.gov (United States)

    Bulla, Ralf; Tornow, Sabine; Anders, Frithjof

    Electron transfer processes play a central role in many chemical and biological systems. Already the transfer of a single electron from the donor to the acceptor can be viewed as a complicated many-body problem, due to the coupling of the electron to the infinitely many environmental degrees of freedom, realized by density fluctuations of the solvent or molecular vibrations of the protein matrix. We focus on the quantum mechanical modelling of two-electron transfer processes whose dynamics is governed by the Coulomb interaction between the electrons as well as the environmental degrees of freedoms represented by a bosonic bath. We identify the regime of parameters in which concerted transfer of the two electrons occurs and discuss the influence of the Coulomb repulsion and the coupling strength to the environment on the electron transfer rate. Calculations are performed using the non-perturbative numerical renormalization group approach for both equilibrium and non-equilibrium properties.

  12. Organic materials for printed electronics.

    Science.gov (United States)

    Berggren, M; Nilsson, D; Robinson, N D

    2007-01-01

    Organic materials can offer a low-cost alternative for printed electronics and flexible displays. However, research in these systems must exploit the differences - via molecular-level control of functionality - compared with inorganic electronics if they are to become commercially viable.

  13. Gutzwiller approximation in strongly correlated electron systems

    Science.gov (United States)

    Li, Chunhua

    Gutzwiller wave function is an important theoretical technique for treating local electron-electron correlations nonperturbatively in condensed matter and materials physics. It is concerned with calculating variationally the ground state wave function by projecting out multi-occupation configurations that are energetically costly. The projection can be carried out analytically in the Gutzwiller approximation that offers an approximate way of calculating expectation values in the Gutzwiller projected wave function. This approach has proven to be very successful in strongly correlated systems such as the high temperature cuprate superconductors, the sodium cobaltates, and the heavy fermion compounds. In recent years, it has become increasingly evident that strongly correlated systems have a strong propensity towards forming inhomogeneous electronic states with spatially periodic superstrutural modulations. A good example is the commonly observed stripes and checkerboard states in high- Tc superconductors under a variety of conditions where superconductivity is weakened. There exists currently a real challenge and demand for new theoretical ideas and approaches that treats strongly correlated inhomogeneous electronic states, which is the subject matter of this thesis. This thesis contains four parts. In the first part of the thesis, the Gutzwiller approach is formulated in the grand canonical ensemble where, for the first time, a spatially (and spin) unrestricted Gutzwiller approximation (SUGA) is developed for studying inhomogeneous (both ordered and disordered) quantum electronic states in strongly correlated electron systems. The second part of the thesis applies the SUGA to the t-J model for doped Mott insulators which led to the discovery of checkerboard-like inhomogeneous electronic states competing with d-wave superconductivity, consistent with experimental observations made on several families of high-Tc superconductors. In the third part of the thesis, new

  14. Emergent behavior in strongly correlated electron systems

    Science.gov (United States)

    Pines, David

    2016-09-01

    I describe early work on strongly correlated electron systems (SCES) from the perspective of a theoretical physicist who, while a participant in their reductionist top-down beginnings, is now part of the paradigm change to a bottom-up ‘emergent’ approach with its focus on using phenomenology to find the organizing principles responsible for their emergent behavior disclosed by experiment—and only then constructing microscopic models that incorporate these. After considering the organizing principles responsible for the emergence of plasmons, quasiparticles, and conventional superconductivity in SCES, I consider their application to three of SCES’s sister systems, the helium liquids, nuclei, and the nuclear matter found in neutron stars. I note some recent applications of the random phase approximation and examine briefly the role that paradigm change is playing in two central problems in our field: understanding the emergence and subsequent behavior of heavy electrons in Kondo lattice materials; and finding the mechanism for the unconventional superconductivity found in heavy electron, organic, cuprate, and iron-based materials.

  15. Electron-electron correlations in liquid s-p metals

    CERN Document Server

    Leys, F E

    2003-01-01

    We present calculations for the valence electron-electron structure factor in liquid Mg near freezing, assuming knowledge of the jellium result. On the basis of this, we predict significant corrections to jellium short-range correlations in liquid s-p metals and in particular an increase in the electron-electron contact probability.

  16. LDA+{sigma}({omega}) method for the electronic structure of strongly correlated antiferromagnetic materials: application to La{sub 2}CuO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Navarro, A.; Costa-Quintana, J.; Lopez-Aguilar, F. [Groupe d' Electromagnetisme, Departament de Fisica, Edifici Cn, Facultat de Ciencies, Universitat Autonoma de Barcelona, 08193 Bellaterra (Barcelona) (Spain)

    2002-09-08

    In this paper we present a method for obtaining the quasiband structure and the renormalized density of quasistates of strongly correlated systems with antiferromagnetic ordering. We calculate the electronic structure of La{sub 2}CuO{sub 4} in order to test this method. The first step required is to calculate the electronic structure from the local density approximation (LDA) in order to obtain the initial non-interacting ground state. The LDA density of states in strongly correlated systems usually presents serious discrepancies with experimental results. As is well known, these discrepancies, fundamentally concerning photoemission, are due to the fact that the dynamic correlation effects are not taken into account within the LDA. In order to include these effects, we obtain a self-energy potential which allows the initial LDA electronic structure to connect with that of the antiferromagnetic ground state arising from a Bogolyubov-like transformation. Within this new ground state, we determine an antiferromagnetic self-energy by means of a spin density wave procedure, and the interacting Green function yields a density of states which is in reasonable agreement with the experimental photoemission result. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  17. Disordered strongly correlated electronic systems

    Science.gov (United States)

    Javan Mard, Hossein

    Disorder can have a vast variety of consequences for the physics of phase transitions. Some transitions remain unchanged in the presence of disorder while others are completely destroyed. In this dissertation we study the effects of quenched disorder on electronic systmens at zero temperature. First, we perform variational studies of the interaction-localization problem to describe the interaction-induced renormalizations of the effective (screened) random potential seen by quasiparticles. Here we present results of careful finite-size scaling studies for the conductance of disordered Hubbard chains at half-filling and zero temperature. While our results indicate that quasiparticle wave functions remain exponentially localized even in the presence of moderate to strong repulsive interactions, we show that interactions produce a strong decrease of the characteristic conductance scale g* signaling the crossover to strong localization. This effect, which cannot be captured by a simple renormalization of the disorder strength, instead reflects a peculiar non-Gaussian form of the spatial correlations of the screened disordered potential, a hitherto neglected mechanism to dramatically reduce the impact of Anderson localization (interference) effects. Second, we formulate a strong-disorder renormalization-group (SDRG) approach to study the beta function of the tight-binding model in one dimension with both diagonal and off-diagonal disorder for states at the band center. We show that the SDRG method, when used to compute transport properties, yields exact results since it is identical to the transfer matrix method. The beta function is shown to be universal when only off-diagonal disorder is present even though single-parameter scaling is known to be violated. A different single-parameter scaling theory is formulated for this particular (particle-hole symmetric) case. Upon breaking particle-hole symmetry (by adding diagonal disorder), the beta function is shown to

  18. Polymer electronic devices and materials.

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  19. Correlated electrons in a dissipative environment

    Science.gov (United States)

    Bulla, R.

    2009-12-01

    When a system of correlated electrons is embedded in a dissipative environment, new emergent phenomena might occur due to the interplay of correlation and dissipation. Here we focus on quantum impurity systems with coupling to a bosonic bath. For the theoretical investigation we introduce the bosonic numerical renormalization group method which has been initially set up for the spin-boson model. The role of both correlations and dissipation is described in the context of two-electron transfer systems. We also discuss prospects for the investigation of lattice models of correlated electrons with coupling to a dissipative bath.

  20. Correlative light and electron microscopy : strategies and applications

    NARCIS (Netherlands)

    Driel, Linda Francina van

    2011-01-01

    Correlative light and electron microscopy (CLEM) refers to the observation of the same structures or ultrastructures with both light microscopy (LM) and electron microscopy (EM). LM provides an overview of the studied material, and enables the quick localization of structures that are fluorescently

  1. Kinks: Fingerprints of strong electronic correlations

    Energy Technology Data Exchange (ETDEWEB)

    Toschi, A; Held, K [Institut fuer Festkoerperphysik, Technische Universitaet Wien, Vienna (Austria); Capone, M; Castellani, C, E-mail: held@ifp.tuwien.ac.a [SMC, CNR-INFM and Dipartimento di Fisica - Universita di Roma ' La Sapienza' , Piazzale Aldo Moro 2, 00185 Roma (Italy)

    2010-01-15

    The textbook knowledge of solid state physics is that the electronic specific heat shows a linear temperature dependence with the leading corrections being a cubic term due to phonons and a cubic-logarithmic term due to the interaction of electrons with bosons. We have shown that this longstanding conception needs to be supplemented since the generic behavior of the low-temperature electronic specific heat includes a kink if the electrons are sufficiently strongly correlated.

  2. Electron backscatter diffraction in materials characterization

    Directory of Open Access Journals (Sweden)

    Dejan Stojakovic

    2012-03-01

    Full Text Available Electron Back-Scatter Diffraction (EBSD is a powerful technique that captures electron diffraction patterns from crystals, constituents of material. Captured patterns can then be used to determine grain morphology, crystallographic orientation and chemistry of present phases, which provide complete characterization of microstructure and strong correlation to both properties and performance of materials. Key milestones related to technological developments of EBSD technique have been outlined along with possible applications using modern EBSD system. Principles of crystal diffraction with description of crystallographic orientation, orientation determination and phase identification have been described. Image quality, resolution and speed, and system calibration have also been discussed. Sample preparation methods were reviewed and EBSD application in conjunction with other characterization techniques on a variety of materials has been presented for several case studies. In summary, an outlook for EBSD technique was provided.

  3. Inequalities for electron-field correlation functions

    CERN Document Server

    Tyc, T

    2000-01-01

    I show that there exists a class of inequalities between correlation functions of different orders of a chaotic electron field. These inequalities lead to the antibunching effect and are a consequence of the fact that electrons are fermions -- indistinguishable particles with antisymmetric states. The derivation of the inequalities is based on the known form of the correlation functions for the chaotic state and on the properties of matrices and determinants.

  4. Space processing of electronic materials

    Science.gov (United States)

    Holland, L. R.

    1982-01-01

    The bulk growth of solid solution alloys of mercury telluride and cadmium telluride is discussed. These alloys are usually described by the formula Hg1-xCdxTe, and are useful for the construction of infrared detectors. The electronic energy band gap can be controlled between zero and 1.6 electron volts by adjusting the composition x. The most useful materials are at x approximately 20%, suitable for detection wavelengths of about 10 micrometers. The problems of growing large crystals are rooted in the wide phase diagram of the HgTe-CdTe pseudobinary system which leads to exaggerate segregation in freezing, constitutional supercooling, and other difficulties, and in the high vapor pressure of mercury at the growth temperatures, which leads to loss of stoichiometry and to the necessity of working in strong, pressure resistant sealed containers.

  5. Use of near infrared correlation spectroscopy for quantitation of surface iron, absorbed water and stored electronic energy in a suite of Mars soil analog materials

    Science.gov (United States)

    Coyne, Lelia M.; Banin, Amos; Carle, Glenn; Orenberg, James; Scattergood, Thomas

    1989-01-01

    A number of questions concerning the surface mineralogy and the history of water on Mars remain unresolved using the Viking analyses and Earth-based telescopic data. Identification and quantitation of iron-bearing clays on Mars would elucidate these outstanding issues. Near infrared correlation analysis, a method typically applied to qualitative and quantitative analysis of individual constituents of multicomponent mixtures, is adapted here to selection of distinctive features of a small, highly homologous series of Fe/Ca-exchanged montmorillonites and several kalinites. Independently determined measures of surface iron, relative humidity and stored electronic energy were used as constituent data for linear regression of the constituent vs. reflectance data throughout the spectral region 0.68 to 2.5 micrometers. High correlations were found in appropriate regions for all three constituents, though that with stored energy is still considered tenuous. Quantitation was improved using 1st and 2nd derivative spectra. High resolution data over a broad spectral range would be required to quantitatively identify iron-bearing clays by remotely sensed reflectance.

  6. Effective action for strongly correlated electron systems

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, A., E-mail: aferraz.iccmp@gmail.com [International Institute of Physics - UFRN, Department of Experimental and Theoretical Physics - UFRN, Natal (Brazil); Kochetov, E.A. [International Institute of Physics - UFRN, Natal (Brazil); Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2011-12-21

    The su(2|1) coherent-state path-integral representation of the partition function of the t-J model of strongly correlated electrons is derived at finite doping. The emergent effective action is compared to the one proposed earlier on phenomenological grounds by Shankar to describe holes in an antiferromagnet [R. Shankar, Nucl. Phys. B 330 (1990) 433]. The t-J model effective action is found to have an important 'extra' factor with no analogue in Shankar's action. It represents the local constraint of no double electron occupancy and reflects the rearrangement of the underlying phase-space manifold due to the presence of strong electron correlation. This important ingredient is shown to be essential to describe the physics of strongly correlated electron systems.

  7. Correlations in a partially degenerate electron plasma

    Energy Technology Data Exchange (ETDEWEB)

    Chihara, Junzo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    The density-functional theory proves that an ion-electron mixture can be treated as a one-component liquid interacting only via a pairwise interaction in the evaluation of the ion-ion radial distribution function (RDF), and provides a set of integral equations: one is an integral equation for the ion-ion RDF and another for an effective ion-ion interaction, which depends on the ion-ion RDF. This formulation gives a set of integral equation to calculate plasma structures with combined use of the electron-electron correlations in a partially degenerate electron plasma. Therefore, it is important for this purpose to determine the electron-electron correlations at a arbitrary temperature. Here, they are calculated by the quantal version of the hypernetted chain (HNC) equation. On the basis of the jellium-vacancy model, the ionic and electronic structures of rubidium are calculated for the range from liquid metal to plasma states by increasing the temperature at the fixed density using the electron-correlation results. (author)

  8. Role of electronic correlations in Ga

    KAUST Repository

    Zhu, Zhiyong

    2011-06-13

    An extended around mean field (AMF) functional for less localized pelectrons is developed to quantify the influence of electronic correlations in α-Ga. Both the local density approximation (LDA) and generalized gradient approximation are known to mispredict the Ga positional parameters. The extended AMF functional together with an onsite Coulomb interaction of Ueff=1.1 eV, as obtained from constraint LDA calculations, reduces the deviations by about 20%. The symmetry lowering coming along with the electronic correlations turns out to be in line with the Ga phase diagram.

  9. Contributed review: Review of integrated correlative light and electron microscopy.

    Science.gov (United States)

    Timmermans, F J; Otto, C

    2015-01-01

    New developments in the field of microscopy enable to acquire increasing amounts of information from large sample areas and at an increased resolution. Depending on the nature of the technique, the information may reveal morphological, structural, chemical, and still other sample characteristics. In research fields, such as cell biology and materials science, there is an increasing demand to correlate these individual levels of information and in this way to obtain a better understanding of sample preparation and specific sample properties. To address this need, integrated systems were developed that combine nanometer resolution electron microscopes with optical microscopes, which produce chemically or label specific information through spectroscopy. The complementary information from electron microscopy and light microscopy presents an opportunity to investigate a broad range of sample properties in a correlated fashion. An important part of correlating the differences in information lies in bridging the different resolution and image contrast features. The trend to analyse samples using multiple correlated microscopes has resulted in a new research field. Current research is focused, for instance, on (a) the investigation of samples with nanometer scale distribution of inorganic and organic materials, (b) live cell analysis combined with electron microscopy, and (c) in situ spectroscopic and electron microscopy analysis of catalytic materials, but more areas will benefit from integrated correlative microscopy.

  10. Contributed Review: Review of integrated correlative light and electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Timmermans, F. J.; Otto, C. [Medical Cell Biophysics Group, MIRA Institute, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-01-15

    New developments in the field of microscopy enable to acquire increasing amounts of information from large sample areas and at an increased resolution. Depending on the nature of the technique, the information may reveal morphological, structural, chemical, and still other sample characteristics. In research fields, such as cell biology and materials science, there is an increasing demand to correlate these individual levels of information and in this way to obtain a better understanding of sample preparation and specific sample properties. To address this need, integrated systems were developed that combine nanometer resolution electron microscopes with optical microscopes, which produce chemically or label specific information through spectroscopy. The complementary information from electron microscopy and light microscopy presents an opportunity to investigate a broad range of sample properties in a correlated fashion. An important part of correlating the differences in information lies in bridging the different resolution and image contrast features. The trend to analyse samples using multiple correlated microscopes has resulted in a new research field. Current research is focused, for instance, on (a) the investigation of samples with nanometer scale distribution of inorganic and organic materials, (b) live cell analysis combined with electron microscopy, and (c) in situ spectroscopic and electron microscopy analysis of catalytic materials, but more areas will benefit from integrated correlative microscopy.

  11. Electron Correlation Models for Optical Activity

    DEFF Research Database (Denmark)

    Höhn, E. G.; O. E. Weigang, Jr.

    1968-01-01

    A two-system no-overlap model for rotatory strength is developed for electric-dipole forbidden as well as allowed transitions. General equations which allow for full utilization of symmetry in the chromophore and in the environment are obtained. The electron correlation terms are developed in full...

  12. Electronic structure study of strongly correlated Mott-insulators

    Science.gov (United States)

    Yin, Quan

    Strongly correlated electronic systems have presented the most challenging problems to condensed matter theorists for many years and this continues to be the case. They are complicated materials with active d or f orbitals, whose valence electrons are in the intermediate region between itinerant (band-like) and highly localized (atomic-like) limits, which demand genuine many-body treatment. Although dealing with strongly correlated systems is a notorious problem, they have drawn broad interests of both theoretical and experimental condensed matter physicists, with intensive studies carried out in the past and present. This is due to the most exotic properties associated with strongly correlated materials, such as high-temperature superconductivity, metal-insulator transition, volume collapse, Kondo effect, colossal magnetoresistance, and many others. Although density functional theory (DFT) within local density approximation (LDA) is very successful in describing a wide range of materials, it encounters difficulty in predicting strongly correlated systems. Traditionally, they have been studied by model Hamiltonians with empirical parameters. The development of dynamical mean field theory (DMFT) and its marriage to DFT have brought new hope for first-principle study of strongly correlated systems. In this work, electronic structures of select strongly correlated systems are studied using LDA+DMFT. As theoretical backgrounds, reviews of DFT and DMFT are given in the first few chapters, where we also introduce the philosophy and workflow of LDA+DMFT. In the following chapters, applications to transition metal oxides, undoped high-temperature superconductors and actinide oxides are presented, where electronic structures of these materials and other properties derived from electronic structures are calculated and compared with experiments where available. Generally good agreements have been found between theory and experiments.

  13. Electron correlation by polarization of interacting densities

    CERN Document Server

    Whitten, Jerry L

    2016-01-01

    Coulomb interactions that occur in electronic structure calculations are correlated by allowing basis function components of the interacting densities to polarize, thereby reducing the magnitude of the interaction. Exchange integrals of molecular orbitals are not correlated. The modified Coulomb interactions are used in single-determinant or configuration interaction calculations. The objective is to account for dynamical correlation effects without explicitly introducing higher spherical harmonic functions into the molecular orbital basis. Molecular orbital densities are decomposed into a distribution of spherical components that conserve the charge and each of the interacting components is considered as a two-electron wavefunction embedded in the system acted on by an average field Hamiltonian plus . A method of avoiding redundancy is described. Applications to atoms, negative ions and molecules representing different types of bonding and spin states are discussed.

  14. The utility of band theory in strongly correlated electron systems.

    Science.gov (United States)

    Zwicknagl, Gertrud

    2016-12-01

    This article attempts to review how band structure calculations can help to better understand the intriguing behavior of materials with strongly correlated electrons. Prominent examples are heavy-fermion systems whose highly anomalous low-temperature properties result from quantum correlations not captured by standard methods of electronic structure calculations. It is shown how the band approach can be modified to incorporate the typical many-body effects which characterize the low-energy excitations. Examples underlining the predictive power of this ansatz are discussed.

  15. The utility of band theory in strongly correlated electron systems

    Science.gov (United States)

    Zwicknagl, Gertrud

    2016-12-01

    This article attempts to review how band structure calculations can help to better understand the intriguing behavior of materials with strongly correlated electrons. Prominent examples are heavy-fermion systems whose highly anomalous low-temperature properties result from quantum correlations not captured by standard methods of electronic structure calculations. It is shown how the band approach can be modified to incorporate the typical many-body effects which characterize the low-energy excitations. Examples underlining the predictive power of this ansatz are discussed.

  16. Optical response of correlated electron systems

    Science.gov (United States)

    Maslov, Dmitrii L.; Chubukov, Andrey V.

    2017-02-01

    Recent progress in experimental techniques has made it possible to extract detailed information on dynamics of carriers in a correlated electron material from its optical conductivity, σ (Ω,T) . This review consists of three parts, addressing the following three aspects of optical response: (1) the role of momentum relaxation; (2) Ω /T scaling of the optical conductivity of a Fermi-liquid metal, and (3) the optical conductivity of non-Fermi-liquid metals. In the first part (section 2), we analyze the interplay between the contributions to the conductivity from normal and umklapp electron–electron scattering. As a concrete example, we consider a two-band metal and show that although its optical conductivity is finite it does not obey the Drude formula. In the second part (sections 3 and 4), we re-visit the Gurzhi formula for the optical scattering rate, 1/τ (Ω,T)\\propto {{ Ω }2}+4{π2}{{T}2} , and show that a factor of 4{π2} is the manifestation of the ‘first-Matsubara-frequency rule’ for boson response, which states that 1/τ (Ω,T) must vanish upon analytic continuation to the first boson Matsubara frequency. However, recent experiments show that the coefficient b in the Gurzhi-like form, 1/τ (Ω,T)\\propto {{ Ω }2}+b{π2}{{T}2} , differs significantly from b  =  4 in most of the cases. We suggest that the deviations from Gurzhi scaling may be due to the presence of elastic but energy-dependent scattering, which decreases the value of b below 4, with b  =  1 corresponding to purely elastic scattering. In the third part (section 5), we consider the optical conductivity of metals near quantum phase transitions to nematic and spin-density-wave states. In the last case, we focus on ‘composite’ scattering processes, which give rise to a non-Fermi-liquid behavior of the optical conductivity at T  =  0: {σ\\prime}(Ω )\\propto {{ Ω }-1/3} at low frequencies and {σ\\prime}(Ω )\\propto {{ Ω }-1} at higher frequencies. We

  17. Explicit inclusion of electronic correlation effects in molecular dynamics

    Science.gov (United States)

    Julien, Jean-Pierre; Kress, Joel D.; Zhu, Jian-Xin

    2017-07-01

    We design a quantum molecular dynamics method for strongly correlated electron metals. The strong electronic correlation effects are treated within a real-space version of the Gutzwiller variational approximation (GA), which is suitable for the inhomogeneity inherent in the process of quantum molecular dynamics (MD) simulations. We also propose an efficient algorithm based on the second-moment approximation to the electronic density of states for the search of the optimal variation parameters, from which the renormalized interatomic MD potentials are fully determined. By considering a minimal one-correlated-orbital Anderson model with parameterized spatial dependence of tight-binding hopping integrals, this fast GA-MD method is benchmarked with that using exact diagonalization to solve the GA variational parameters. The efficiency and accuracy are illustrated. We have demonstrated the effect of temperature coupled with electronic correlation on structural properties simulated with MD. This method will open up an unprecedented opportunity enabling large-scale quantum MD simulations of strongly correlated electronic materials.

  18. Correlations in the impenetrable electron gas

    OpenAIRE

    Göhmann, F.; Its, A. R.; Korepin, V. E.

    1998-01-01

    We consider non-relativistic electrons in one dimension with infinitely strong repulsive delta function interaction. We calculate the long-time, large-distance asymptotics of field-field correlators in the gas phase. The gas phase at low temperatures is characterized by the ideal gas law. We calculate the exponential decay, the power law corrections and the constant factor of the asymptotics. Our results are valid at any temperature. They simplify at low temperatures, where they are easily re...

  19. Quantum frustrated and correlated electron systems

    Directory of Open Access Journals (Sweden)

    P Thalmeier

    2008-06-01

    Full Text Available  Quantum phases and fluctuations in correlated electron systems with frustration and competing interactions are reviewed. In the localized moment case the S=1/2 J1 - J2 - model on a square lattice exhibits a rich phase diagram with magnetic as well as exotic hidden order phases due to the interplay of frustration and quantum fluctuations. Their signature in magnetocaloric quantities and the high field magnetization are surveyed. The possible quantum phase transitions are discussed and applied to layered vanadium oxides. In itinerant electron systems frustration is an emergent property caused by electron correlations. It leads to enhanced spin fluctuations in a very large region of momentum space and therefore may cause heavy fermion type low temperature anomalies as in the 3d spinel compound LiV2O4 . Competing on-site and inter-site electronic interactions in Kondo compounds are responsible for the quantum phase transition between nonmagnetic Kondo singlet phase and magnetic phase such as observed in many 4f compounds. They may be described by Kondo lattice and simplified Kondo necklace type models. Their quantum phase transitions are investigated by numerical exact diagonalization and analytical bond operator methods respectively.

  20. Ion beam processing of advanced electronic materials

    Energy Technology Data Exchange (ETDEWEB)

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B. (eds.) (California Univ., Berkeley, CA (USA); International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center; Oak Ridge National Lab., TN (USA))

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  1. Electronic, magnetic, and optical materials

    CERN Document Server

    Fulay, Pradeep

    2013-01-01

    Technological aspects of ferroelectric, piezoelectric and pyroelectric materials are discussed in detail, in a way that should allow the reader to select an optimal material for a particular application. The basics of magnetostatics are described clearly, as are a wide range of magnetic properties of materials … .-Tony Harker, Department of Physics and Astronomy, University College London

  2. Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy

    Science.gov (United States)

    Bogle, Stephanie Nicole

    2009-01-01

    Fluctuation electron microscopy (FEM) has been used to study the nanoscale order in various amorphous materials. The method is explicitly sensitive to 3- and 4-body atomic correlation functions in amorphous materials; this is sufficient to establish the existence of structural order on the nanoscale, even when the radial distribution function…

  3. Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy

    Science.gov (United States)

    Bogle, Stephanie Nicole

    2009-01-01

    Fluctuation electron microscopy (FEM) has been used to study the nanoscale order in various amorphous materials. The method is explicitly sensitive to 3- and 4-body atomic correlation functions in amorphous materials; this is sufficient to establish the existence of structural order on the nanoscale, even when the radial distribution function…

  4. Electronic transport and dynamics in correlated heterostructures

    Science.gov (United States)

    Mazza, G.; Amaricci, A.; Capone, M.; Fabrizio, M.

    2015-05-01

    We investigate by means of the time-dependent Gutzwiller approximation the transport properties of a strongly correlated slab subject to Hubbard repulsion and connected with to two metallic leads kept at a different electrochemical potential. We focus on the real-time evolution of the electronic properties after the slab is connected to the leads and consider both metallic and Mott insulating slabs. When the correlated slab is metallic, the system relaxes to a steady state that sustains a finite current. The zero-bias conductance is finite and independent of the degree of correlations within the slab as long as the system remains metallic. On the other hand, when the slab is in a Mott insulating state, the external bias leads to currents that are exponentially activated by charge tunneling across the Mott-Hubbard gap, consistent with the Landau-Zener dielectric breakdown scenario.

  5. Correlative photoactivated localization and scanning electron microscopy.

    Directory of Open Access Journals (Sweden)

    Benjamin G Kopek

    Full Text Available The ability to localize proteins precisely within subcellular space is crucial to understanding the functioning of biological systems. Recently, we described a protocol that correlates a precise map of fluorescent fusion proteins localized using three-dimensional super-resolution optical microscopy with the fine ultrastructural context of three-dimensional electron micrographs. While it achieved the difficult simultaneous objectives of high photoactivated fluorophore preservation and ultrastructure preservation, it required a super-resolution optical and specialized electron microscope that is not available to many researchers. We present here a faster and more practical protocol with the advantage of a simpler two-dimensional optical (Photoactivated Localization Microscopy (PALM and scanning electron microscope (SEM system that retains the often mutually exclusive attributes of fluorophore preservation and ultrastructure preservation. As before, cryosections were prepared using the Tokuyasu protocol, but the staining protocol was modified to be amenable for use in a standard SEM without the need for focused ion beam ablation. We show the versatility of this technique by labeling different cellular compartments and structures including mitochondrial nucleoids, peroxisomes, and the nuclear lamina. We also demonstrate simultaneous two-color PALM imaging with correlated electron micrographs. Lastly, this technique can be used with small-molecule dyes as demonstrated with actin labeling using phalloidin conjugated to a caged dye. By retaining the dense protein labeling expected for super-resolution microscopy combined with ultrastructural preservation, simplifying the tools required for correlative microscopy, and expanding the number of useful labels we expect this method to be accessible and valuable to a wide variety of researchers.

  6. Correlative photoactivated localization and scanning electron microscopy.

    Science.gov (United States)

    Kopek, Benjamin G; Shtengel, Gleb; Grimm, Jonathan B; Clayton, David A; Hess, Harald F

    2013-01-01

    The ability to localize proteins precisely within subcellular space is crucial to understanding the functioning of biological systems. Recently, we described a protocol that correlates a precise map of fluorescent fusion proteins localized using three-dimensional super-resolution optical microscopy with the fine ultrastructural context of three-dimensional electron micrographs. While it achieved the difficult simultaneous objectives of high photoactivated fluorophore preservation and ultrastructure preservation, it required a super-resolution optical and specialized electron microscope that is not available to many researchers. We present here a faster and more practical protocol with the advantage of a simpler two-dimensional optical (Photoactivated Localization Microscopy (PALM)) and scanning electron microscope (SEM) system that retains the often mutually exclusive attributes of fluorophore preservation and ultrastructure preservation. As before, cryosections were prepared using the Tokuyasu protocol, but the staining protocol was modified to be amenable for use in a standard SEM without the need for focused ion beam ablation. We show the versatility of this technique by labeling different cellular compartments and structures including mitochondrial nucleoids, peroxisomes, and the nuclear lamina. We also demonstrate simultaneous two-color PALM imaging with correlated electron micrographs. Lastly, this technique can be used with small-molecule dyes as demonstrated with actin labeling using phalloidin conjugated to a caged dye. By retaining the dense protein labeling expected for super-resolution microscopy combined with ultrastructural preservation, simplifying the tools required for correlative microscopy, and expanding the number of useful labels we expect this method to be accessible and valuable to a wide variety of researchers.

  7. Functional organic materials for electronics industries

    Science.gov (United States)

    Shibayama, K.; Ono, H.

    1982-01-01

    Topics closely related with organic, high molecular weight material synthesis are discussed. These are related to applications such as display, recording, sensors, semiconductors, and I.C. correlation. New materials are also discussed. General principles of individual application are not included. Materials discussed include color, electrochromic, thermal recording, organic photoconductors for electrophotography, and photochromic materials.

  8. Electron and Positron Stopping Powers of Materials

    Science.gov (United States)

    SRD 7 NIST Electron and Positron Stopping Powers of Materials (PC database for purchase)   The EPSTAR database provides rapid calculations of stopping powers (collisional, radiative, and total), CSDA ranges, radiation yields and density effect corrections for incident electrons or positrons with kinetic energies from 1 keV to 10 GeV, and for any chemically defined target material.

  9. Recent development of organic electron transport materials

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    This article reviews the recent development of organic electron transport materials applied in the fields of organic photoconductors, light-emitting diodes, field-effect transistors and solar cells. Several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high-performance organic electron transport materials are suggested as well.

  10. Phosphorus-containing materials for organic electronics.

    Science.gov (United States)

    Stolar, Monika; Baumgartner, Thomas

    2014-05-01

    Phosphorus-based materials have received widespread attention in recent years, in particular as possible candidates for practical application in organic electronics. The geometry and electronic nature of phosphorus make it a favorable heteroatom for property tuning in order to obtain better performing organic electronics. This Focus Review discusses recent structural modifications and syntheses of phosphorus-based materials, illustrates property tuning at the same time, and highlights specific examples for device applications.

  11. Environmental testing techniques for electronics and materials

    CERN Document Server

    Dummer, Geoffrey W A; Fry, D W; Higinbotham, W

    2013-01-01

    Environmental Testing Techniques for Electronics and Materials reviews environmental testing techniques for evaluating the performance of electronic equipment, components, and materials. Environmental test planning, test methods, and instrumentation are described, along with the general environmental conditions under which equipment must operate. This book is comprised of 15 chapters and begins by explaining why environmental testing is necessary and describing the environment in which electronics must operate. The next chapter considers how an environmental test plan is designed; the methods

  12. Realistic theory of electronic correlations in nanoscopic systems

    Science.gov (United States)

    Schüler, Malte; Barthel, Stefan; Wehling, Tim; Karolak, Michael; Valli, Angelo; Sangiovanni, Giorgio

    2017-07-01

    Nanostructures with open shell transition metal or molecular constituents host often strong electronic correlations and are highly sensitive to atomistic material details. This tutorial review discusses method developments and applications of theoretical approaches for the realistic description of the electronic and magnetic properties of nanostructures with correlated electrons. First, the implementation of a flexible interface between density functional theory and a variant of dynamical mean field theory (DMFT) highly suitable for the simulation of complex correlated structures is explained and illustrated. On the DMFT side, this interface is largely based on recent developments of quantum Monte Carlo and exact diagonalization techniques allowing for efficient descriptions of general four fermion Coulomb interactions, reduced symmetries and spin-orbit coupling, which are explained here. With the examples of the Cr (001) surfaces, magnetic adatoms, and molecular systems it is shown how the interplay of Hubbard U and Hund's J determines charge and spin fluctuations and how these interactions drive different sorts of correlation effects in nanosystems. Non-local interactions and correlations present a particular challenge for the theory of low dimensional systems. We present our method developments addressing these two challenges, i.e., advancements of the dynamical vertex approximation and a combination of the constrained random phase approximation with continuum medium theories. We demonstrate how non-local interaction and correlation phenomena are controlled not only by dimensionality but also by coupling to the environment which is typically important for determining the physics of nanosystems.

  13. Exactly solvable models of strongly correlated electrons

    CERN Document Server

    Korepin, Vladimir E

    1994-01-01

    Systems of strongly correlated electrons are at the heart of recent developments in condensed matter theory. They have applications to phenomena like high-T c superconductivity and the fractional quantum hall effect. Analytical solutions to such models, though mainly limited to one spatial dimension, provide a complete and unambiguous picture of the dynamics involved. This volume is devoted to such solutions obtained using the Bethe Ansatz, and concentrates on the most important of such models, the Hubbard model. The reprints are complemented by reviews at the start of each chapter and an exte

  14. Telerobotic electronic materials processing experiment

    Science.gov (United States)

    Ollendorf, Stanford

    1991-01-01

    The Office of Commercial Programs (OCP), working in conjunction with NASA engineers at the Goddard Space Flight Center, is supporting research efforts in robot technology and microelectronics materials processing that will provide many spinoffs for science and industry. The Telerobotic Materials Processing Experiment (TRMPX) is a Shuttle-launched materials processing test payload using a Get Away Special can. The objectives of the project are to define, develop, and demonstrate an automated materials processing capability under realistic flight conditions. TRMPX will provide the capability to test the production processes that are dependent on microgravity. The processes proposed for testing include the annealing of amorphous silicon to increase grain size for more efficient solar cells, thin film deposition to demonstrate the potential of fabricating solar cells in orbit, and the annealing of radiation damaged solar cells.

  15. Energetic materials research using scanning electron microscopy

    NARCIS (Netherlands)

    Elshout, J.J.M.H. van den; Duvalois, W.; Benedetto, G.L. Di; Bouma, R.H.B.; Heijden, A.E.D.M. van der

    2016-01-01

    A key-technique for the research of energetic materials is scanning electron microscopy. In this paper several examples are given of characterization studies on energetic materials, including a solid composite propellant formulation. Results of the characterization of energetic materials using scann

  16. Energetic materials research using scanning electron microscopy

    NARCIS (Netherlands)

    Elshout, J.J.M.H. van den; Duvalois, W.; Benedetto, G.L. Di; Bouma, R.H.B.; Heijden, A.E.D.M. van der

    2016-01-01

    A key-technique for the research of energetic materials is scanning electron microscopy. In this paper several examples are given of characterization studies on energetic materials, including a solid composite propellant formulation. Results of the characterization of energetic materials using

  17. Metallothioneins for correlative light and electron microscopy.

    Science.gov (United States)

    Fernández de Castro, Isabel; Sanz-Sánchez, Laura; Risco, Cristina

    2014-01-01

    Structural biologists have been working for decades on new strategies to identify proteins in cells unambiguously. We recently explored the possibilities of using the small metal-binding protein, metallothionein (MT), as a tag to detect proteins in transmission electron microscopy. It had been reported that, when fused with a protein of interest and treated in vitro with gold salts, a single MT tag will build an electron-dense gold cluster ~1 nm in diameter; we provided proof of this principle by demonstrating that MT can be used to detect intracellular proteins in bacteria and eukaryotic cells. The method, which is compatible with a variety of sample processing techniques, allows specific detection of proteins in cells with exceptional sensitivity. We illustrated the applicability of the technique in a series of studies to visualize the intracellular distribution of bacterial and viral proteins. Immunogold labeling was fundamental to confirm the specificity of the MT-gold method. When proteins were double-tagged with green fluorescent protein and MT, direct correlative light and electron microscopy allowed visualization of the same macromolecular complexes with different spatial resolutions. MT-gold tagging might also become a useful tool for mapping proteins into the 3D-density maps produced by (cryo)-electron tomography. New protocols will be needed for double or multiple labeling of proteins, using different versions of MT with fluorophores of different colors. Further research is also necessary to render the MT-gold labeling procedure compatible with immunogold labeling on Tokuyasu cryosections and with cryo-electron microscopy of vitreous sections.

  18. Electronic properties of strongly correlated layered oxides

    Science.gov (United States)

    Lee, Wei-Cheng

    The two-dimensional electronic systems (2DESs) have kept surprising physicists for the last few decades. Examples include the integer and fractional quantum Hall effects, cuprate superconductivity, and graphene. This thesis is intended to develop suitable theoretical tools which can be generalized to study new types of 2DESs with strong correlation feature. The first part of this thesis describes the investigation of heterostructures made by Mott insulators. This work is mostly motivated by the significant improvement of techniques for layer-by-layer growth of transition metal oxides in the last few years. We construct a toy model based on generalized Hubbard model complemented with long-ranged Coulomb interaction, and we study it by Hartree-Fock theory, dynamical mean-field theory, and Thomas-Fermi theory. We argue that interesting 2D strongly correlated electronic systems can be created in such heterostructures under several conditions. Since these 2D systems are formed entirely due to the gap generated by electron-electron interaction, they are not addiabatically connected to a noninteracting electron states. This feature makes these 2D systems distinguish from the ones created in semiconductor heterostructures, and they may be potential systems having non-Fermi liquid behaviors. The second part of this thesis is devoted to the study of collective excitations in high-temperature superconductors. One important achievement in this work is to develop a time-dependent mean-field theory for t -- U -- J -- V model, an effective low energy model for cuprates. The time-dependent mean-field theory is proven to be identical to the generalized random-phase approximation (GRPA) which includes both the bubble and ladder diagrams. We propose that the famous 41 meV magnetic resonance mode observed in the inelastic neutron scattering measurements is a collective mode arising from a conjugation relation, which has been overlooked in previous work, between the antiferromagnetic

  19. Electronics based on two-dimensional materials.

    Science.gov (United States)

    Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe; Palacios, Tomás; Neumaier, Daniel; Seabaugh, Alan; Banerjee, Sanjay K; Colombo, Luigi

    2014-10-01

    The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

  20. An Electronic Approach to Materials Design

    Institute of Scientific and Technical Information of China (English)

    Masahiko MORINAGA; Yoshinori MURATA; Hiroshi YUKAWA

    2003-01-01

    A molecular orbital approach to materials design has recently made great progress. This approach is based on the electronic structure calculations by the DV-Xα cluster method. In this paper recent progress in this approachis reviewed. In particular

  1. Electronic materials processing and the microgravity environment

    Science.gov (United States)

    Witt, A. F.

    1988-01-01

    The nature and origin of deficiencies in bulk electronic materials for device fabrication are analyzed. It is found that gravity generated perturbations during their formation account largely for the introduction of critical chemical and crystalline defects and, moreover, are responsible for the still existing gap between theory and experiment and thus for excessive reliance on proprietary empiricism in processing technology. Exploration of the potential of reduced gravity environment for electronic materials processing is found to be not only desirable but mandatory.

  2. Materials for bioresorbable radio frequency electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Huang, Xian; Seo, Jung-Hun; Song, Jun-Kyul; Kim, Stanley; Hage-Ali, Sami; Chung, Hyun-Joong; Tao, Hu; Omenetto, Fiorenzo G; Ma, Zhenqiang; Rogers, John A

    2013-07-12

    Materials, device designs and manufacturing approaches are presented for classes of RF electronic components that are capable of complete dissolution in water or biofluids. All individual passive/active components as well as system-level examples such as wireless RF energy harvesting circuits exploit active materials that are biocompatible. The results provide diverse building blocks for physically transient forms of electronics, of particular potential value in bioresorbable medical implants with wireless power transmission and communication capabilities.

  3. Surfaces and interfaces of electronic materials

    CERN Document Server

    Brillson, Leonard J

    2012-01-01

    An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural propertie

  4. Artificial atoms based on correlated materials

    Science.gov (United States)

    Mannhart, J.; Boschker, H.; Kopp, T.; Valentí, R.

    2016-08-01

    Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of the fundamental properties of such systems and summarizes the state of the field. We furthermore present and consider the concept of artificial atoms fabricated from quantum materials, anticipating remarkable scientific advances and possibly important applications of this new field of research. The surprising properties of these artificial atoms and of molecules or even of solids assembled from them are presented and discussed.

  5. New thin materials for electronics.

    Energy Technology Data Exchange (ETDEWEB)

    Schwartzberg, Adam

    2012-02-01

    The work described in this report is from an Early Career LDRD to develop and investigate novel thin film organic conductors with drastically improved electronic properties over the current state of the art. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory a Langmuir-Blodgett trough (LB) was built from scavenged parts and added to a scanning Raman microscope at LBNL. First order thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have helped position Sandia for advances in this area of MOF film creation. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory, a Langmuir-Blodgett trough (LB) was built and added to a scanning Raman microscope at LBNL. Thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy, and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have positioned Sandia for advance in this area of MOF film creation. The interactions with LBNL also led to award of two user projects at the Molecular Foundry at LBNL led by current Sandia staff and the appointment of a current Sandia staff to the Molecular Foundry User Executive Committee.

  6. Stretchable, curvilinear electronics based on inorganic materials.

    Science.gov (United States)

    Kim, Dae-Hyeong; Xiao, Jianliang; Song, Jizhou; Huang, Yonggang; Rogers, John A

    2010-05-18

    All commercial forms of electronic/optoelectronic technologies use planar, rigid substrates. Device possibilities that exploit bio-inspired designs or require intimate integration with the human body demand curvilinear shapes and/or elastic responses to large strain deformations. This article reviews progress in research designed to accomplish these outcomes with established, high-performance inorganic electronic materials and modest modifications to conventional, planar processing techniques. We outline the most well developed strategies and illustrate their use in demonstrator devices that exploit unique combinations of shape, mechanical properties and electronic performance. We conclude with an outlook on the challenges and opportunities for this emerging area of materials science and engineering.

  7. Correlation energy, correlated electron density, and exchange-correlation potential in some spherically confined atoms.

    Science.gov (United States)

    Vyboishchikov, Sergei F

    2016-12-05

    We report correlation energies, electron densities, and exchange-correlation potentials obtained from configuration interaction and density functional calculations on spherically confined He, Be, Be(2+) , and Ne atoms. The variation of the correlation energy with the confinement radius Rc is relatively small for the He, Be(2+) , and Ne systems. Curiously, the Lee-Yang-Parr (LYP) functional works well for weak confinements but fails completely for small Rc . However, in the neutral beryllium atom the CI correlation energy increases markedly with decreasing Rc . This effect is less pronounced at the density-functional theory level. The LYP functional performs very well for the unconfined Be atom, but fails badly for small Rc . The standard exchange-correlation potentials exhibit significant deviation from the "exact" potential obtained by inversion of Kohn-Sham equation. The LYP correlation potential behaves erratically at strong confinements. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  8. Transparent oxide electronics from materials to devices

    CERN Document Server

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  9. Transmission Electron Microscopy and Diffractometry of Materials

    CERN Document Server

    Fultz, Brent

    2013-01-01

    This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. All chapters were updated and revised for clarity. The book explains the fundamentals of how waves and wavefunctions interact with atoms in solids, and the similarities and differences of using x-rays, electrons, or neutrons for diffraction measurements. Diffraction effects of crystalline order, defects, and disorder in materials are explained in detail. Both practical and theoretical issues are covered. The book can be used in an introductory-level or advanced-level course, since sections are identified by difficulty. Each chapter includes a set of problems to illustrate principles, and the extensive Appendix includes la...

  10. Advanced electron microscopy for advanced materials.

    Science.gov (United States)

    Van Tendeloo, Gustaaf; Bals, Sara; Van Aert, Sandra; Verbeeck, Jo; Van Dyck, Dirk

    2012-11-08

    The idea of this Review is to introduce newly developed possibilities of advanced electron microscopy to the materials science community. Over the last decade, electron microscopy has evolved into a full analytical tool, able to provide atomic scale information on the position, nature, and even the valency atoms. This information is classically obtained in two dimensions (2D), but can now also be obtained in 3D. We show examples of applications in the field of nanoparticles and interfaces.

  11. Progress in molecular precursors for electronic materials

    Energy Technology Data Exchange (ETDEWEB)

    Buhro, W.E. [Washington Univ., St. Louis, MO (United States)

    1996-09-01

    Molecular-precursor chemistry provides an essential underpinning to all electronic-materials technologies, including photovoltaics and related areas of direct interest to the DOE. Materials synthesis and processing is a rapidly developing field in which advances in molecular precursors are playing a major role. This article surveys selected recent research examples that define the exciting current directions in molecular-precursor science. These directions include growth of increasingly complex structures and stoichiometries, surface-selective growth, kinetic growth of metastable materials, growth of size-controlled quantum dots and quantum-dot arrays, and growth at progressively lower temperatures. Continued progress in molecular-precursor chemistry will afford precise control over the crystal structures, nanostructures, and microstructures of electronic materials.

  12. Sustainable Materials Management (SMM) Electronics Challenge Data

    Science.gov (United States)

    On September 22, 2012, EPA launched the SMM Electronics Challenge. The Challenge encourages electronics manufacturers, brand owners and retailers to strive to send 100 percent of the used electronics they collect from the public, businesses and within their own organizations to third-party certified electronics refurbishers and recyclers. The Challenge??s goals are to: 1). Ensure responsible recycling through the use of third-party certified recyclers, 2). Increase transparency and accountability through public posting of electronics collection and recycling data, and 3). Encourage outstanding performance through awards and recognition. By striving to send 100 percent of used electronics collected to certified recyclers and refurbishers, Challenge participants are ensuring that the used electronics they collect will be responsibly managed by recyclers that maximize reuse and recycling, minimize exposure to human health and the environment, ensure the safe management of materials by downstream handlers, and require destruction of all data on used electronics. Electronics Challenge participants are publicly recognized on EPA's website as a registrant, new participant, or active participant. Awards are offered in two categories - tier and champion. Tier awards are given in recognition of achieving all the requirements under a gold, silver or bronze tier. Champion awards are given in two categories - product and non-product. For champion awards, a product is an it

  13. New Nanocrystalline Materials for Power Electronics Applications

    Directory of Open Access Journals (Sweden)

    Jan Bydzovsky

    2008-01-01

    Full Text Available New nanocrystalline materials for the applications in the power electronics systems are developed and tested.These materials are intended to be used in the magnetic circuits of switching-mode power supplies (SMPS. The aim was toachieve extremely low hysteresis and non-linearity in operating region resulting in increased efficiency and decreased weightand size whilst keeping low price of the high-power frequency converters for SMPS.

  14. Electronic structure studies of topological materials

    Science.gov (United States)

    Zhou, Shuyun

    Three-dimensional (3D) Dirac fermions are a new class of topological quantum materials. In 3D Dirac semimetals, the conduction and valence bands touch each other at discrete points in the momentum space and show linear dispersions along all momentum directions, forming 3D Dirac cones which are protected by the crystal symmetry. Here I will present our recent studies of the electronic structures of novel materials which host 3D Dirac fermions by using angle-resolved photoemission spectroscopy.

  15. New Nanocrystalline Materials for Power Electronics Applications

    OpenAIRE

    Jan Bydzovsky; Jozef Kuchta; Elemir Usak; Peter Svec

    2008-01-01

    New nanocrystalline materials for the applications in the power electronics systems are developed and tested. These materials are intended to be used in the magnetic circuits of switching-mode power supplies (SMPS). The aim was to achieve extremely low hysteresis and non-linearity in operating region resulting in increased efficiency and decreased weight and size whilst keeping low price of the high-power frequency converters for SMPS.

  16. Electronic Materials and Applications 2014 (Abstracts)

    Science.gov (United States)

    2015-04-02

    Characterization • Electronic, Optical, and Magnetic materials • Fundamentals • Green Manufacturing and Sustainability • Iron and Steel ( Ferrous Alloys ...Arctic (EMA-S6-P020-2014) Enhanced thermoelectric performance in bismuth telluride based alloys by multi-scale microstructural effects T. Zhu*, L. Hu...interactions) to calculate key materials parameters such as band gaps and effective masses, and to investigate how strain and alloying can be used for band

  17. Hybrid Quantum-Classical Approach to Correlated Materials

    Science.gov (United States)

    Bauer, Bela; Wecker, Dave; Millis, Andrew J.; Hastings, Matthew B.; Troyer, Matthias

    2016-07-01

    Recent improvements in the control of quantum systems make it seem feasible to finally build a quantum computer within a decade. While it has been shown that such a quantum computer can in principle solve certain small electronic structure problems and idealized model Hamiltonians, the highly relevant problem of directly solving a complex correlated material appears to require a prohibitive amount of resources. Here, we show that by using a hybrid quantum-classical algorithm that incorporates the power of a small quantum computer into a framework of classical embedding algorithms, the electronic structure of complex correlated materials can be efficiently tackled using a quantum computer. In our approach, the quantum computer solves a small effective quantum impurity problem that is self-consistently determined via a feedback loop between the quantum and classical computation. Use of a quantum computer enables much larger and more accurate simulations than with any known classical algorithm, and will allow many open questions in quantum materials to be resolved once a small quantum computer with around 100 logical qubits becomes available.

  18. Superconductivity, Antiferromagnetism, and Kinetic Correlation in Strongly Correlated Electron Systems

    Directory of Open Access Journals (Sweden)

    Takashi Yanagisawa

    2015-01-01

    Full Text Available We investigate the ground state of two-dimensional Hubbard model on the basis of the variational Monte Carlo method. We use wave functions that include kinetic correlation and doublon-holon correlation beyond the Gutzwiller ansatz. It is still not clear whether the Hubbard model accounts for high-temperature superconductivity. The antiferromagnetic correlation plays a key role in the study of pairing mechanism because the superconductive phase exists usually close to the antiferromagnetic phase. We investigate the stability of the antiferromagnetic state when holes are doped as a function of the Coulomb repulsion U. We show that the antiferromagnetic correlation is suppressed as U is increased exceeding the bandwidth. High-temperature superconductivity is possible in this region with enhanced antiferromagnetic spin fluctuation and pairing interaction.

  19. Electron Field Emission from Nanostructured Carbon Materials

    Science.gov (United States)

    Gupta, Sanju

    2005-03-01

    Fabricating small structures has almost become fashionable and the rationale is that reducing one or more dimensions below some critical length changes the systems' physical properties drastically, where nanocrystalline diamond (n-D) and carbon nanotubes (CNTs) in the class of advanced carbon materials serve model examples. Emission of electrons at room temperature - cold electron emitters - are of vital importance for a variety of vacuum microelectronic devices - electron microscopes, photo multipliers, X-ray generators, lamps, and flat panel displays and microwave cathodes. Electron emitters may lead to otherwise difficult to obtain advantages in performance and/or design. This is the driving force to investigate the carbon-related materials as cold cathodes. In this talk, the performance of various forms of carbon in thin film form including diamond, n-D, and vertically aligned CNTs as cold cathodes for their potential use in field emission displays (FEDs) in terms of I-V characteristics and corresponding spatial imaging will be presented. Physics based models such as, NEA, surface modification, geometric enhancement, and microstructure alteration due to particle bombardment, and doping, will be described to support the experimental observations of electron field enhancement (low turn-on voltage, high current and emission site density) and its reliability from the abovementioned carbon-related materials. Other vacuum device applications such as thermionic power generators will be mentioned briefly.

  20. Computational Nanotechnology Molecular Electronics, Materials and Machines

    Science.gov (United States)

    Srivastava, Deepak; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    This presentation covers research being performed on computational nanotechnology, carbon nanotubes and fullerenes at the NASA Ames Research Center. Topics cover include: nanomechanics of nanomaterials, nanotubes and composite materials, molecular electronics with nanotube junctions, kinky chemistry, and nanotechnology for solid-state quantum computers using fullerenes.

  1. Growth of electronic materials in microgravity

    Science.gov (United States)

    Matthiesen, D. H.

    1991-01-01

    A growth experiment aimed at growing two selenium-doped gallium arsenide crystals, each of which are one inch in diameter and 3.45 inches in length, is described. Emphasis is placed on the effect of microgravity on the segregation behavior of electronic materials. The lessons learned from the 1975 ASTP mission have been incorporated in this experiment.

  2. Graphene, a material for superfast electronics?

    Science.gov (United States)

    Courtney, Robert; Kattel, Shyam; Kiefer, Boris

    2011-10-01

    Physics Department, New Mexico State University: The performance of electronic devices has tremendously increased over the last few decades mainly due to miniaturization of electronic components. However, Moore's law suggests that a limiting minimal feature size of microprocessors may be reached as early as 2020. Thus, it is important to search for new technologies that allow overcoming this limitation. One possibility is to explore the feasibility of near speed of light electronics. Traditional metals have Fermi velocity on the order of 2000 km/s while the Fermi velocity of semiconductors is significantly lower. In contrast, the particular electronic structure of graphene may permit much faster electron transport than semiconductors and metals. This effect is due to the linear segments of the electronic dispersion in graphene below the Fermi energy, as opposed to the quadratic dispersion found in other materials. Here we have used density-functional-theory (DFT) to explore the effect of nitrogen doping on the electronic band structure of graphene, and especially its effect on the linear dispersion that is critical for near speed of light electronics.

  3. Electronic structure of NiO: Correlation and band effects

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Z. (Stanford Electronics Laboratory, Stanford University, Stanford, California (USA)); List, R.S. (Los Alamos National Laboratory, Los Alamos, New Mexico (USA)); Dessau, D.S.; Wells, B.O. (Stanford Electronics Laboratory, Stanford University, Stanford, California (USA)); Jepsen, O. (Max-Planck-Institute for Solid State Research, D-7000 Stuttgart 80 (Federal Republic of Germany)); Arko, A.J.; Barttlet, R. (Los Alamos National Laboratory, Los Alamos, New Mexico (USA)); Shih, C.K. (Department of Physics, University of Texas, Austin, Texas (USA)); Parmigiani, F. (IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California (USA)); Huang, J.C.; Lindberg, P.A.P. (Stanford Electronics Laboratory, Stanford University, Stanford, California (USA))

    1991-08-15

    We have performed angle-resolved-photoemission experiments and local-density-functional (LDA) band calculations on NiO to study correlation and band effects of this conceptually important compound. Our experimental result suggests a dual nature of the electronic structure of NiO. On the one hand, the LDA band calculation has some relevance to the electronic structure of NiO, and the inclusion of the antiferromagnetic order is essential. For the lower O 2{ital p} bands, the LDA calculation agrees almost perfectly with experimental energy positions and dispersion relations. On the other hand, discrepancies between the experiment and the LDA calculation do exist, especially for the Ni 3{ital d} bands and the O 2{ital p} bands that are heavily mixed with the Ni 3{ital d} bands. It appears that the main discrepancies between the experimental results and the LDA calculation are concentrated in the regions of the insulating gap and the valence-band satellite. In addition to these results, we also report the interesting angle and photon-energy dependence of the satellite emission. The above results show that the angle-resolved-photoemission studies can provide much additional information about the electronic structure of correlated materials like NiO.

  4. Systematically improvable multiscale solver for correlated electron systems

    Science.gov (United States)

    Kananenka, Alexei A.; Gull, Emanuel; Zgid, Dominika

    2015-03-01

    The development of numerical methods capable of simulating realistic materials with strongly correlated electrons, with controllable errors, is a central challenge in quantum many-body physics. Here we describe a framework for a general multiscale method based on embedding a self-energy of a strongly correlated subsystem into a self-energy generated by a method able to treat large weakly correlated systems approximately. As an example, we present the embedding of an exact diagonalization self-energy into a self-energy generated from self-consistent second-order perturbation theory. Using a quantum impurity model, generated from a cluster dynamical mean field approximation to the two-dimensional Hubbard model, as a benchmark, we illustrate that our method allows us to obtain accurate results at a fraction of the cost of typical Monte Carlo calculations. We test the method in multiple regimes of interaction strengths and dopings of the model. The general embedding framework we present avoids difficulties such as double counting corrections, frequency-dependent interactions, or vertex functions. As it is solely formulated at the level of the single-particle Green's function, it provides a promising route for the simulation of realistic materials that are currently difficult to study with other methods.

  5. Correlative infrared–electron nanoscopy reveals the local structure–conductivity relationship in zinc oxide nanowires

    OpenAIRE

    Stiegler, J.M.; Tena-Zaera, R.; Idigoras, O.; Chuvilin, A.; Hillenbrand, R

    2012-01-01

    High-resolution characterization methods play a key role in the development, analysis and optimization of nanoscale materials and devices. Because of the various material properties, only a combination of different characterization techniques provides a comprehensive understanding of complex functional materials. Here we introduce correlative infrared–electron nanoscopy, a novel method yielding transmission electron microscope and infrared near-field images of one and the same nanostructure. ...

  6. 76 FR 65212 - Henkel Corporation, Currently Known as Henkel Electronic Materials, LLC, Electronic Adhesives...

    Science.gov (United States)

    2011-10-20

    ... Employment and Training Administration Henkel Corporation, Currently Known as Henkel Electronic Materials..., Massachusetts location to combine the legacy Henkel Electronic Materials business and The National Starch Electronic Materials business following a company purchase in April 2008. Workers separated from...

  7. Emergent Gauge Fields and Their Nonperturbative Effects in Correlated Electrons

    Science.gov (United States)

    Kim, Ki-Seok; Tanaka, Akihiro

    The history of modern condensed matter physics may be regarded as the competition and reconciliation between Stoner's and Anderson's physical pictures, where the former is based on momentum-space descriptions focusing on long wave-length fluctuations while the latter is based on real-space physics emphasizing emergent localized excitations. In particular, these two view points compete with each other in various nonperturbative phenomena, which range from the problem of high Tc superconductivity, quantum spin liquids in organic materials and frustrated spin systems, heavy-fermion quantum criticality, metal-insulator transitions in correlated electron systems such as doped silicons and two-dimensional electron systems, the fractional quantum Hall effect, to the recently discussed Fe-based superconductors. An approach to reconcile these competing frameworks is to introduce topologically nontrivial excitations into the Stoner's description, which appear to be localized in either space or time and sometimes both, where scattering between itinerant electrons and topological excitations such as skyrmions, vortices, various forms of instantons, emergent magnetic monopoles, and etc. may catch nonperturbative local physics beyond the Stoner's paradigm. In this review article we discuss nonperturbative effects of topological excitations on dynamics of correlated electrons. First, we focus on the problem of scattering between itinerant fermions and topological excitations in antiferromagnetic doped Mott insulators, expected to be relevant for the pseudogap phase of high Tc cuprates. We propose that nonperturbative effects of topological excitations can be incorporated within the perturbative framework, where an enhanced global symmetry with a topological term plays an essential role. In the second part, we go on to discuss the subject of symmetry protected topological states in a largely similar light. While we do not introduce itinerant fermions here, the nonperturbative

  8. Electronic correlations in insulators, metals and superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sentef, Michael Andreas

    2010-12-03

    In this thesis dynamical mean-field methods in combination with a continuous-time quantum Monte Carlo impurity solver are used to study selected open problems of condensed matter theory. These problems comprise the effect of correlations and their quantification in covalent band insulators, non-local correlation effects and their intriguing consequences in frustrated two-dimensional systems, and a phenomenological approach to investigate temperature-dependent transport in graphene in the presence of disorder. (orig.)

  9. Electron-electron correlations in square-well quantum dots: direct energy minimization approach.

    Science.gov (United States)

    Goto, Hidekazu; Hirose, Kikuji

    2011-04-01

    Electron-electron correlations in two-dimensional square-well quantum dots are investigated using the direct energy minimization scheme. Searches for groundstate charges and spin configurations are performed with varying the sizes of dots and the number of electrons. For a two-electron system, a standout difference between the configurations with and without counting correlation energy is demonstrated. The emergence and melting of Wigner-molecule-like structures arising from the interplay between the kinetic energy and Coulombic interaction energy are described. Electron-electron correlation energies and addition energy spectra are calculated, and special electron numbers related to peculiar effects of the square well are extracted.

  10. Synaptic electronics: materials, devices and applications.

    Science.gov (United States)

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  11. Inexpensive electronics and software for photon statistics and correlation spectroscopy

    Science.gov (United States)

    Gamari, Benjamin D.; Zhang, Dianwen; Buckman, Richard E.; Milas, Peker; Denker, John S.; Chen, Hui; Li, Hongmin; Goldner, Lori S.

    2016-01-01

    Single-molecule-sensitive microscopy and spectroscopy are transforming biophysics and materials science laboratories. Techniques such as fluorescence correlation spectroscopy (FCS) and single-molecule sensitive fluorescence resonance energy transfer (FRET) are now commonly available in research laboratories but are as yet infrequently available in teaching laboratories. We describe inexpensive electronics and open-source software that bridges this gap, making state-of-the-art research capabilities accessible to undergraduates interested in biophysics. We include a discussion of the intensity correlation function relevant to FCS and how it can be determined from photon arrival times. We demonstrate the system with a measurement of the hydrodynamic radius of a protein using FCS that is suitable for the undergraduate teaching laboratory. The FPGA-based electronics, which are easy to construct, are suitable for more advanced measurements as well, and several applications are described. As implemented, the system has 8 ns timing resolution, can control up to four laser sources, and can collect information from as many as four photon-counting detectors. PMID:26924846

  12. Near-infrared branding efficiently correlates light and electron microscopy.

    Science.gov (United States)

    Bishop, Derron; Nikić, Ivana; Brinkoetter, Mary; Knecht, Sharmon; Potz, Stephanie; Kerschensteiner, Martin; Misgeld, Thomas

    2011-06-05

    The correlation of light and electron microscopy of complex tissues remains a major challenge. Here we report near-infrared branding (NIRB), which facilitates such correlation by using a pulsed, near-infrared laser to create defined fiducial marks in three dimensions in fixed tissue. As these marks are fluorescent and can be photo-oxidized to generate electron contrast, they can guide re-identification of previously imaged structures as small as dendritic spines by electron microscopy.

  13. Relativistic internally contracted multireference electron correlation methods

    CERN Document Server

    Shiozaki, Toru

    2015-01-01

    We report internally contracted relativistic multireference configuration interaction (ic-MRCI), complete active space second-order perturbation (CASPT2), and strongly contracted n-electron valence state perturbation theory (NEVPT2) on the basis of the four-component Dirac Hamiltonian, enabling accurate simulations of relativistic, quasi-degenerate electronic structure of molecules containing transition-metal and heavy elements. Our derivation and implementation of ic-MRCI and CASPT2 are based on an automatic code generator that translates second-quantized ans\\"atze to tensor-based equations, and to efficient computer code. NEVPT2 is derived and implemented manually. The rovibrational transition energies and absorption spectra of HI and TlH are presented to demonstrate the accuracy of these methods.

  14. Electron correlations and silicon nanocluster energetics

    OpenAIRE

    2016-01-01

    The first-principle prediction of nanocluster stable structure is often hampered by the existence of many isomer configurations with energies close to the ground state. This fact attaches additional importance to many-electron effects going beyond density functional theory (DFT), because their contributions may change a subtle energy order of competitive structures. To analyze this problem, we consider, as an example, the energetics of silicon nanoclusters passivated by hydrogen Si$_{10}$H$_{...

  15. Correlated electronic structure of CeN

    Energy Technology Data Exchange (ETDEWEB)

    Panda, S.K., E-mail: swarup.panda@physics.uu.se [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Di Marco, I. [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Delin, A. [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); KTH Royal Institute of Technology, School of Information and Communication Technology, Department of Materials and Nano Physics, Electrum 229, SE-164 40 Kista (Sweden); KTH Royal Institute of Technology, Swedish e-Science Research Center (SeRC), SE-100 44 Stockholm (Sweden); Eriksson, O., E-mail: olle.eriksson@physics.uu.se [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden)

    2016-04-15

    Highlights: • The electronic structure of CeN is studied within the GGA+DMFT approach using SPTF and Hubbard I approximation. • 4f spectral functions from SPTF and Hubbard I are coupled to explain the various spectroscopic manifestations of CeN. • The calculated XPS and BIS spectra show good agreement with the corresponding experimental spectra. • The contribution of the various l-states and the importance of cross-sections for the photoemission process are analyzed. - Abstract: We have studied in detail the electronic structure of CeN including spin orbit coupling (SOC) and electron–electron interaction, within the dynamical mean-field theory combined with density-functional theory in generalized gradient approximation (GGA+DMFT). The effective impurity problem has been solved through the spin-polarized T-matrix fluctuation-exchange (SPTF) solver and the Hubbard I approximation (HIA). The calculated l-projected atomic partial densities of states and the converged potential were used to obtain the X-ray-photoemission-spectra (XPS) and Bremstrahlung Isochromat spectra (BIS). Following the spirit of Gunnarsson–Schonhammer model, we have coupled the SPTF and HIA 4f spectral functions to explain the various spectroscopic manifestations of CeN. Our computed spectra in such a coupled scheme explain the experimental data remarkably well, establishing the validity of our theoretical model in analyzing the electronic structure of CeN. The contribution of the various l-states in the total spectra and the importance of cross sections are also analyzed in detail.

  16. The 2016 oxide electronic materials and oxide interfaces roadmap

    Science.gov (United States)

    Lorenz, M.; Ramachandra Rao, M. S.; Venkatesan, T.; Fortunato, E.; Barquinha, P.; Branquinho, R.; Salgueiro, D.; Martins, R.; Carlos, E.; Liu, A.; Shan, F. K.; Grundmann, M.; Boschker, H.; Mukherjee, J.; Priyadarshini, M.; DasGupta, N.; Rogers, D. J.; Teherani, F. H.; Sandana, E. V.; Bove, P.; Rietwyk, K.; Zaban, A.; Veziridis, A.; Weidenkaff, A.; Muralidhar, M.; Murakami, M.; Abel, S.; Fompeyrine, J.; Zuniga-Perez, J.; Ramesh, R.; Spaldin, N. A.; Ostanin, S.; Borisov, V.; Mertig, I.; Lazenka, V.; Srinivasan, G.; Prellier, W.; Uchida, M.; Kawasaki, M.; Pentcheva, R.; Gegenwart, P.; Miletto Granozio, F.; Fontcuberta, J.; Pryds, N.

    2016-11-01

    Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface-to-volume ratio. Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on ‘oxide electronic materials and oxide interfaces’. This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide-based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan. The contributions in this roadmap span several thematic groups which are represented by

  17. Spin-Orbit Coupling and Novel Electronic States at the Interfaces of Heavy Fermion Materials

    Science.gov (United States)

    2016-02-22

    spin-orbit coupling (SOC) may induce new electronic phases that are difficult to realize in bulk materials . With the support of this STIR grant, we have...Report: Spin-Orbit Coupling and Novel Electronic States at the Interfaces of Heavy Fermion Materials Report Title This report summarizes the progress...regime in the correlated- electron “global” phase diagram of heavy fermion materials and, in addition, paving the way for interactions between the

  18. Electron correlation and bond-length alternation in polyene chains

    Energy Technology Data Exchange (ETDEWEB)

    Kuprievich, V.A.

    1986-11-01

    The PPP model is used to consider polyene chains in the ground state with allowance for the interaction of the electrons with core deformations. The stationary wave functions describing the electron correlations are derived as antisymmetrized products of two-electron functions optimized with respect to all variational parameters. The bond-length alternation can be related to the characteristics of the electron-electron potential; one can allow approximately for the effects of interaction between electrons at adjacent centers on the alternation by renormalizing the parameters in the Hubbard model.

  19. Correlating substituent parameter values to electron transport properties of molecules

    Science.gov (United States)

    Vedova-Brook, Natalie; Matsunaga, Nikita; Sohlberg, Karl

    2004-03-01

    There are a vast number of organic compounds that could be considered for use in molecular electronics. Because of this, the need for efficient and economical screening tools has emerged. We demonstrate that the substituent parameter values ( σ), commonly found in advanced organic chemistry textbooks, correlate strongly with features of the charge migration process, establishing them as useful indicators of electronic properties. Specifically, we report that ab initio derived electronic charge transfer values for 16 different substituted aromatic molecules for molecular junctions correlate to the σ values with a correlation coefficient squared ( R2) of 0.863.

  20. Carrier Induced Magnetism In Correlated Materials

    Science.gov (United States)

    Lee, Byounghak; Trivedi, Nandini; Zhang, Shiwei; Martin, Richard

    2003-03-01

    We study a two dimensional Hubbard model with magnetic impurities using a combination of single particle and quantum Monte Carlo techniques. Our aim is to determine the interaction between magnetic ions in both strongly interacting hosts, such as magnetic perovskites, and weakly interacting hosts, such as magnetic semiconductors. In the first step, the interactions are treated within an inhomogeneous Hartree-Fock approach and self-consistency is demanded at each site, providing a more accurate treatment of disorder effects compared with other mean-field treatments such as virtual crystal and coherent potential approximations. These are then augmented with determinantal quantum Monte Carlo techniques that treat the electron interactions more accurately. We calculate the exchange coupling as a function of the magnetic impurity concentration, the repulsive electron-electron interaction, carrier concentration, and temperature. We compare the calculated local density of states with STM measurements and also obtain the ferromagnetic transition temperature.

  1. Atom Probe Tomography of Nanoscale Electronic Materials

    Energy Technology Data Exchange (ETDEWEB)

    Larson, David J.; Prosa, Ty J.; Perea, Daniel E.; Inoue, Hidekazu; Mangelinck, D.

    2016-01-01

    Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

  2. Physics of electronic materials principles and applications

    CERN Document Server

    Rammer, Jørgen

    2017-01-01

    Adopting a uniquely pedagogical approach, this comprehensive textbook on the quantum mechanics of semiconductor materials and devices focuses on the materials, components and devices themselves whilst incorporating a substantial amount of fundamental physics related to condensed matter theory and quantum mechanics. Written primarily for advanced undergraduate students in physics and engineering, this book can also be used as a supporting text for introductory quantum mechanics courses, and will be of interest to anyone interested in how electronic devices function at a fundamental level. Complete with numerous exercises, and with all the necessary mathematics and physics included in appendices, this book guides the reader seamlessly through the principles of quantum mechanics and the quantum theory of metals and semiconductors, before describing in detail how devices are exploited within electric circuits and in the hardware of computers, for example as amplifiers, switches and transistors. Includes nume...

  3. Electronic structure and magnetism of complex materials

    CERN Document Server

    Papaconstantopoulos, D A

    2003-01-01

    Recent developments in electronic structure theory have led to a new understanding of magnetic materials at the microscopic level. This enables a truly first-principles approach to investigations of technologically important magnetic materials. Among these advances have been practical schemes for handling non-collinear magnetic systems, including relativity, understanding of the origins and role of orbital magnetism within band structure formalisms, density functional approaches for magnons and low-lying spin excitations, understanding of the interplay of orbital, spin and lattice orderings in complex oxides, transport theories for layered systems, and the theory of magnetic interactions in doped semiconductors. The book covers these recent developments with review articles by some of the main originators of these advances.

  4. Transmission electron microscopy and diffractometry of materials

    CERN Document Server

    Fultz, Brent

    2001-01-01

    This book teaches graduate students the concepts of trans- mission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materi- als. It emphasizes themes common to both techniques, such as scattering from atoms and the formation and analysis of dif- fraction patterns. It also describes unique aspects of each technique, especially imaging and spectroscopy in the TEM. The textbook thoroughly develops both introductory and ad- vanced-level material, using over 400 accompanying illustra- tions. Problems are provided at the end of each chapter to reinforce key concepts. Simple citatioins of rules are avoi- ded as much as possible, and both practical and theoretical issues are explained in detail. The book can be used as both an introductory and advanced-level graduate text since sec- tions/chapters are sorted according to difficulty and grou- ped for use in quarter and semester courses on TEM and XRD.

  5. Crosslinked polymeric dielectric materials and electronic devices incorporating same

    Science.gov (United States)

    Marks, Tobin J. (Inventor); Facchetti, Antonio (Inventor); Wang, Zhiming (Inventor); Choi, Hyuk-Jin (Inventor); Suh, legal representative, Nae-Jeong (Inventor)

    2012-01-01

    Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.

  6. Size, dimensionality, and strong electron correlation in nanoscience.

    Science.gov (United States)

    Brus, Louis

    2014-10-21

    In electronic structure theory, electron-electron repulsion is normally considered only in an average (or mean field) sense, for example, in a single Hartree-Fock determinant. This is the simple molecular orbital model, which is often a good approximation for molecules. In infinite systems, this averaging treatment leads to delocalized electronic bands, an excellent description of bulk 3D sp(3) semiconductors. However, in reality electrons try to instantaneously avoid each other; their relative motion is correlated. Strong electron-electron repulsion and correlation create new collective states and cause new femtosecond kinetic processes. This is especially true in 1D and 2D systems. The quantum size effect, a single electron property, is widely known: the band gap increases with decreasing size. This Account focuses on the experimental consequences of strong correlation. We first describe π-π* excited states in carbon nanotubes (CNTs). To obtain the spectra of individual CNTs, we developed a white-light, right-angle resonant Rayleigh scattering method. Discrete exciton transitions dominate the optical absorption spectra of both semiconducting and metallic tubes. Excitons are bound neutral excited states in which the electron and hole tightly orbit each other due to their mutual Coulomb attraction. We then describe more generally the independent roles of size and dimensionality in nanoelectronic structure, using additional examples from graphene, trans-polyacetylene chains, transition metal dichalcogenides, organic/inorganic Pb iodide perovskites, quantum dots, and pentacene van der Waals crystals. In 1D and 2D chemical systems, the electronic band structure diagram can be a poor predictor of properties if explicit correlation is not considered. One- and two-dimensional systems show quantum confinement and especially strong correlation as compared with their 3D parent systems. The Coulomb interaction is enhanced because the electrons are on the surface. One- and

  7. Correlative Stochastic Optical Reconstruction Microscopy and Electron Microscopy

    OpenAIRE

    Doory Kim; Deerinck, Thomas J.; Sigal, Yaron M.; Babcock, Hazen P.; Ellisman, Mark H.; Xiaowei Zhuang

    2015-01-01

    Correlative fluorescence light microscopy and electron microscopy allows the imaging of spatial distributions of specific biomolecules in the context of cellular ultrastructure. Recent development of super-resolution fluorescence microscopy allows the location of molecules to be determined with nanometer-scale spatial resolution. However, correlative super-resolution fluorescence microscopy and electron microscopy (EM) still remains challenging because the optimal specimen preparation and ima...

  8. Many electron correlations in stage-1 graphene intercalation compounds

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, Sidharth, E-mail: AcharyaSidharth19@yahoo.in; Sharma, Raman, E-mail: sramanb70@mailcity.com [Department of Physics Himachal Pradesh University, Shimla, Shimla-171005 (India)

    2015-05-15

    Many electron correlations in stage-1 graphene intercalation compounds (GICs) are studied in generalized-random-phase-approximation. With this approximation, we are able to study short range exchange and correlation effects in GICs. These exchange correlations leads to BCS superconducting states in which one electron correlates with another via its correlation hole to form a stable pair of electrons known as Cooper pair. Cooper pair energies are calculated as the excitations in S(q,ω) following a method similar to exciton energy calculations. Short range effects governing local field correction G(q,ω) are studied for all wave vectors and frequencies. We have found a reasonable agreement between our results and the earlier theoretical results.

  9. A Tale of Two Electrons: Correlation at High Density

    CERN Document Server

    Loos, Pierre-François

    2010-01-01

    We review our recent progress in the determination of the high-density correlation energy $\\Ec$ in two-electron systems. Several two-electron systems are considered, such as the well known helium-like ions (helium), and the Hooke's law atom (hookium). We also present results regarding two electrons on the surface of a sphere (spherium), and two electrons trapped in a spherical box (ballium). We also show that, in the large-dimension limit, the high-density correlation energy of two opposite-spin electrons interacting {\\em via} a Coulomb potential is given by $\\Ec \\sim -1/(8D^2)$ for any radial external potential $V(r)$, where $D$ is the dimensionality of the space. This result explains the similarity of $\\Ec$ in the previous two-electron systems for $D=3$.

  10. DMFT at 25. Infinite dimensions. Lecutre notes of the Autumn school on correlated electrons 2014

    Energy Technology Data Exchange (ETDEWEB)

    Pavarini, Eva; Koch, Erik; Vollhardt, Dieter; Lichtenstein, Alexander (eds.)

    2014-07-01

    The following topics were dealt with: From Gutzwiller functions to dynamical mean-field theory, electronic structure of correlated materials, materials from an atonic viewpoint beyond the Landau paradigm, development of the LDA+DMFT approach, projectors and interactions, linear response functions, continuous-time QMC solvers for electronic systems in fermionic and bosonic baths, quantum cluster methods, making use of elf-energy functionals in the variational cluster approximation, dynamic vertex approximation, functional renormalization group approach to interacting Fermi systems, correlated electron dynamics and nonequilibrium dynamical mean-field theory, the one-step ARPES model, photoemission spectroscopy, correlation effects and electronic dimer formation in Ti{sub 2}O{sub 3}. (HSI)

  11. Sustainable Materials Management (SMM) Electronics Challenge

    Science.gov (United States)

    Learn how the SMM Electronics Challenge encourage electronic manufacturers to strive to send 100 percent of the used electronics they collect from the public and retailers to certified electronics refurbishers and recyclers.

  12. Characterizing Electronic Inhomogeneities of Nanoscale Materials for Printable Electronics

    Science.gov (United States)

    Schlitz, Ruth Anne S.

    Inhomogeneities in the electronic properties of boron-doped silicon nanowires and self-assembled nanodielectrics were characterized quantitatively. For silicon nanowires grown by the vapor-liquid-solid mechanism, radial and axial gradients in boron concentration due to preferentially-doped vapor-solid (VS) deposition on the nanowire side wall lead to significant intra- and inter- nanowire variability. Devices fabricated along the length of a single nanowire transition from behavior dominated by Schottky barriers at the Ni2Si source and drain contacts to linear behavior as the thickness of the VS material increases. For self-assembled nanodielectrics (SANDs), Weibull analysis demonstrates that a high degree of uniformity is achievable with molecular self-assembly. The dielectric breakdown voltage distribution for metal-insulator-semiconductor parallel-plate capacitors containing two types of SAND, Type III and Zr-SAND, were characterized. These devices exhibit a high degree of uniformity (beta ≥ 16 for some samples), and annealing at ≥ 300 °C does not degrade SAND properties. SANDs are also demonstrated to be compatible with electron-beam lithography, and attempts to fabricate Si nanowire SAND field-effect transistors are discussed. Finally, a simple strain platform for one-dimensional nanostructures is presented, and shifts in the Raman peaks of vanadium dioxide nanobeams under varying amounts of uniaxial tension are observed.

  13. Perspective: Explicitly correlated electronic structure theory for complex systems

    Science.gov (United States)

    Grüneis, Andreas; Hirata, So; Ohnishi, Yu-ya; Ten-no, Seiichiro

    2017-02-01

    The explicitly correlated approach is one of the most important breakthroughs in ab initio electronic structure theory, providing arguably the most compact, accurate, and efficient ansatz for describing the correlated motion of electrons. Since Hylleraas first used an explicitly correlated wave function for the He atom in 1929, numerous attempts have been made to tackle the significant challenges involved in constructing practical explicitly correlated methods that are applicable to larger systems. These include identifying suitable mathematical forms of a correlated wave function and an efficient evaluation of many-electron integrals. R12 theory, which employs the resolution of the identity approximation, emerged in 1985, followed by the introduction of novel correlation factors and wave function ansätze, leading to the establishment of F12 theory in the 2000s. Rapid progress in recent years has significantly extended the application range of explicitly correlated theory, offering the potential of an accurate wave-function treatment of complex systems such as photosystems and semiconductors. This perspective surveys explicitly correlated electronic structure theory, with an emphasis on recent stochastic and deterministic approaches that hold significant promise for applications to large and complex systems including solids.

  14. Quantitative Scanning Transmission Electron Microscopy of Electronic and Nanostructured Materials

    Science.gov (United States)

    Yankovich, Andrew B.

    Electronic and nanostructured materials have been investigated using advanced scanning transmission electron microscopy (STEM) techniques. The first topic is the microstructure of Ga and Sb-doped ZnO. Ga-doped ZnO is a candidate transparent conducting oxide material. The microstructure of GZO thin films grown by MBE under different growth conditions and different substrates were examined using various electron microscopy (EM) techniques. The microstructure, prevalent defects, and polarity in these films strongly depend on the growth conditions and substrate. Sb-doped ZnO nanowires have been shown to be the first route to stable p-type ZnO. Using Z-contrast STEM, I have showed that an unusual microstructure of Sb-decorated head-to-head inversion domain boundaries and internal voids contain all the Sb in the nanowires and cause the p-type conduction. InGaN thin films and InGaN / GaN quantum wells (QW) for light emitting diodes are the second topic. Low-dose Z-contrast STEM, PACBED, and EDS on InGaN QW LED structures grown by MOCVD show no evidence for nanoscale composition variations, contradicting previous reports. In addition, a new extended defect in GaN and InGaN was discovered. The defect consists of a faceted pyramid-shaped void that produces a threading dislocation along the [0001] growth direction, and is likely caused by carbon contamination during growth. Non-rigid registration (NRR) and high-precision STEM of nanoparticles is the final topic. NRR is a new image processing technique that corrects distortions arising from the serial nature of STEM acquisition that previously limited the precision of locating atomic columns and counting the number of atoms in images. NRR was used to demonstrate sub-picometer precision in STEM images of single crystal Si and GaN, the best achieved in EM. NRR was used to measure the atomic surface structure of Pt nanoacatalysts and Au nanoparticles, which revealed new bond length variation phenomenon of surface atoms. In

  15. Equivalent electron correlations in nonsequential double ionization of noble atoms

    Science.gov (United States)

    Dong, Shansi; Han, Qiujing; Zhang, Jingtao

    2017-02-01

    Electron correlation is encoded directly in the distribution of the energetic electrons produced in a recollision-impact double ionization process, and varies with the laser field and the target atoms. In order to get equivalent electron correlation effects, one should enlarge the laser intensity cubically and the laser frequency linearly in proportion to the second ionization potentials of the target atoms. The physical mechanism behind the transform is to keep the ponderomotive parameter unchanged when the laser frequency is enlarged. Project supported by the National Natural Science Foundation of China (Grant Nos. 61475168 and 11674231) and sponsored by Shanghai Gaofeng & Gaoyuan Project for University Academic Program Development (Zhang).

  16. Electronic multi-purpose material level sensor

    Science.gov (United States)

    McEwan, Thomas E.

    1997-01-01

    The present electronic multi-purpose material level sensor is based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line that is partially immersed in a liquid, powder, or other substance such as grain in a silo. The time difference of the reflections at the start of the transmission line and the air/liquid interface are used to determine levels to better than 0.01 inch. The sensor is essentially independent of circuit element and temperature variations, and can be mass produced at an extremely low price. The transmission line may be a Goubau line, microstrip, coaxial cable, twin lead, CPS or CPW, and may typically be a strip placed along the inside wall of a tank. The reflected pulses also contain information about strata within the liquid such as sludge-build-up at the bottom of an oil tank.

  17. High-harmonic generation enhanced by dynamical electron correlation

    CERN Document Server

    Tikhomirov, Iliya; Ishikawa, Kenichi L

    2016-01-01

    We theoretically study multielectron effects in high-harmonic generation (HHG), using all-electron first-principles simulations for a one-dimensional (1D) model atom. In addition to usual plateau and cutoff (from a cation in the present case, since the neutral is immediately ionized), we find a prominent resonance peak far above the plateau and a second plateau extended beyond the first cutoff. These features originate from the dication response enhanced by orders of magnitude due to the action of the Coulomb force from the rescattering electron, and, hence, are a clear manifestation of electron correlation. Although the present simulations are done in 1D, the physical mechanism underlying the dramatic enhancement is expected to hold also for three-dimensional real systems. This will provide new possibilities to explore dynamical electron correlation in intense laser fields using HHG, which is usually considered to be of single-electron nature in most cases.

  18. PREFACE: International Conference on Strongly Correlated Electron Systems (SCES 2011)

    Science.gov (United States)

    Littlewood, P. B.; Lonzarich, G. G.; Saxena, S. S.; Sutherland, M. L.; Sebastian, S. E.; Artacho, E.; Grosche, F. M.; Hadzibabic, Z.

    2012-11-01

    The Strongly Correlated Electron Systems Conference (SCES) 2011, was held from 29 August-3 September 2011, in Cambridge, UK. SCES'2011 was dedicated to 100 years of superconductivity and covered a range of topics in the area of strongly correlated systems. The correlated electronic and magnetic materials featured include f-electron based heavy fermion intermetallics and d-electron based transition metal compounds. The meeting welcomed to Cambridge 657 participants from 23 countries, who presented 127 talks (including 16 plenary, 57 invited, and 54 contributed) and 736 posters in 40 sessions over five full days of meetings. This proceedings volume contains papers reporting on the science presented at the meeting. This work deepens our understanding of the rich physical phenomena that arise from correlation effects. Strongly correlated systems are known for their remarkable array of emergent phenomena: the traditional subjects of superconductivity, magnetism and metal-insulator transitions have been joined by non-Fermi liquid phenomena, topologically protected quantum states, atomic and photonic gases, and quantum phase transitions. These are some of the most challenging and interesting phenomena in science. As well as the science driver, there is underlying interest in energy-dense materials, which make use of 'small' electrons packed to the highest possible density. These are by definition 'strongly correlated'. For example: good photovoltaics must be efficient optical absorbers, which means that photons will generate tightly bound electron-hole pairs (excitons) that must then be ionised at a heterointerface and transported to contacts; efficient solid state refrigeration depends on substantial entropy changes in a unit cell, with large local electrical or magnetic moments; efficient lighting is in a real sense the inverse of photovoltaics; the limit of an efficient battery is a supercapacitor employing mixed valent ions; fuel cells and solar to fuel conversion

  19. Probing electron correlation and nuclear dynamics in Momentum Space

    Energy Technology Data Exchange (ETDEWEB)

    Deleuze, M S; Hajgato, B; Morini, F; Knippenberg, S, E-mail: michael.deleuze@uhasselt.b [Research Group of Theoretical Chemistry, Department SBG, Hasselt University, Agoralaan, Gebouw D, B3590 Diepenbeek (Belgium)

    2010-02-01

    Orbital imaging experiments employing Electron Momentum Spectroscopy are subject to many complications, such as distorted wave effects, conformational mobility in the electronic ground state, ultra-fast nuclear dynamics in the final state, or a dispersion of the ionization intensity over electronically excited (shake-up) configurations of the cation. The purpose of the present contribution is to illustrate how a proper treatment of these complications enables us to probe in momentum space the consequences of electron correlation and nuclear dynamics in neutral and cationic states.

  20. Liquid Silane Routes to Electronic Materials

    Energy Technology Data Exchange (ETDEWEB)

    Douglas L. Schulz; Xuliang Dai; Kendric J. Nelson; Konstantin Pokhodnya; Justin M. Hoey; Iskander S. Akhatov; Orven F. Swenson; Jeremiah Smith; John Lovaasen; Matt Robinson; Scott Payne; Philip R. Boudjouk

    2008-12-04

    New chemistries based upon liquid cyclohexasilane (Si{sub 6}H{sub 12} or CHS) have been used as precursors to silicon-containing electronic materials. Spin-coating of CHS-based inks with subsequent UV light and/or thermal treatment yielded amorphous silicon (a-Si:H) films. While initial ink chemistries gave a-Si:H with high resistivity (i.e., > 10{sup 6} {Omega}.cm), several doping strategies are under development to address this limitation. In this contribution, the current status of solution processed rectifying diodes and field effect transistors fabricated from CHS-based inks will be presented. Additionally, a new printing approach termed collimated aerosol beam direct write (CAB-DW{sup TM}) was developed that allows the deposition of printed Ag lines 5 {mu}m in width. A status update will be given where CHS-based inks have been used to CAB-DW silicon-based features with linewidths <10 {mu}m. Assuming silicon thin film materials with good electrical properties will be developed, there may be significant cost advantages associated with the ability to controllably deposit the semiconductor in a metered fashion.

  1. Ordered materials for organic electronics and photonics.

    Science.gov (United States)

    O'Neill, Mary; Kelly, Stephen M

    2011-02-01

    We present a critical review of semiconducting/light emitting, liquid crystalline materials and their use in electronic and photonic devices such as transistors, photovoltaics, OLEDs and lasers. We report that annealing from the mesophase improves the order and packing of organic semiconductors to produce state-of-the-art transistors. We discuss theoretical models which predict how charge transport and light emission is affected by the liquid crystalline phase. Organic photovoltaics and OLEDs require optimization of both charge transport and optical properties and we identify the various trade-offs involved for ordered materials. We report the crosslinking of reactive mesogens to give pixellated full-colour OLEDs and distributed bi-layer photovoltaics. We show how the molecular organization inherent to the mesophase can control the polarization of light-emitting devices and the gain in organic, thin-film lasers and can also provide distributed feedback in chiral nematic mirrorless lasers. We update progress on the surface alignment of liquid crystalline semiconductors to obtain monodomain devices without defects or devices with spatially varying properties. Finally the significance of all of these developments is assessed.

  2. Electron correlation within the relativistic no-pair approximation

    DEFF Research Database (Denmark)

    Almoukhalalati, Adel; Knecht, Stefan; Jensen, Hans Jørgen Aa

    2016-01-01

    This paper addresses the definition of correlation energy within 4-component relativistic atomic and molecular calculations. In the nonrelativistic domain the correlation energy is defined as the difference between the exact eigenvalue of the electronic Hamiltonian and the Hartree-Fock energy....... In practice, what is reported is the basis set correlation energy, where the "exact" value is provided by a full Configuration Interaction (CI) calculation with some specified one-particle basis. The extension of this definition to the relativistic domain is not straightforward since the corresponding......-like correlation expression, whereas the corresponding CI correlation energy contains an additional relaxation term. We explore numerically our theoretical analysis by carrying out variational and perturbative calculations on the two-electron rare gas atoms with specially tailored basis sets...

  3. Nonlinear phononics and structural control of strongly correlated materials

    Energy Technology Data Exchange (ETDEWEB)

    Mankowsky, Roman

    2016-01-20

    Mid-infrared light pulses can be used to resonantly excite infrared-active vibrational modes for the phase control of strongly correlated materials on subpicosecond timescales. As the energy is transferred directly into atomic motions, dissipation into the electronic system is reduced, allowing for the emergence of unusual low energy collective properties. Light-induced superconductivity, insulator-metal transitions and melting of magnetic order demonstrate the potential of this method. An understanding of the mechanism, by which these transitions are driven, is however missing. The aim of this work is to uncover this process by investigating the nonlinear lattice dynamics induced by the excitation and to elucidate their contribution to the modulation of collective properties of strongly correlated materials. The first signature of nonlinear lattice dynamics was reported in the observation of coherent phonon oscillations, resonant with the excitation of an infrared-active phonon mode in a manganite. This nonlinear phononic coupling can be described within a model, which predicts not only oscillatory coherent phonons dynamics but also directional atomic displacements along the coupled modes on average, which could cause the previously observed transitions. We verified this directional response and quantified the anharmonic coupling constant by tracing the atomic motions in a time-resolved hard X-ray diffraction experiment with sub-picometer spatial and femtosecond temporal resolution. In a subsequent study, we investigated the role of nonlinear lattice dynamics in the emergence of superconductivity far above the equilibrium transition temperature, an intriguing effect found to follow lattice excitation of YBa{sub 2}Cu{sub 3}O{sub 6+x}. By combining density functional theory (DFT) calculations of the anharmonic coupling constants with time-resolved X-ray diffraction experiments, we identified a structural rearrangement, which appears and decays with the same temporal

  4. Electron Beam Welding of Thick Copper Material

    Energy Technology Data Exchange (ETDEWEB)

    Broemssen, Bernt von [IVF Industriforskning och utveckling AB, Stockholm (Sweden)

    2002-08-01

    The purpose of this study was to review the two variants of the Electron Beam Welding (EBW) processes developed (or used) by 1- SKB, Sweden with assistance from TWI, England and 2 - POSIVA, Finland with assistance from Outokumpu, Finland. The aim was also to explain the principle properties of the EBW method: how it works, the parameters controlling the welding result but also giving rise to benefits, and differences between the EBW variants. The main conclusions are that both SKB and POSIVA will within a few years succeed to qualify their respective EBW method for welding of copper canisters. The Reduced Pressure EBW that SKB use today seems to be very promising in order to avoid root defects. If POSIVA does not succeed to avoid root defects with the high vacuum method and the beam oscillation technique it should be possible for POSIVA to incorporate the Reduced Pressure technique albeit with significant changes to the EBW equipment. POSIVA has possibly an advantage over SKB with the beam oscillation technique used, which gives an extra degree of freedom to affect the weld quality. The beam oscillation could be of importance for closing of the keyhole. Before EBW of lids, the material certification showing the alloy content (specifying min and max impurity percentages) and the mechanical properties should be checked. The welded material needs also to be tested for mechanical properties. If possible the weld should have a toughness level equal to that of the unwelded parent material. Specifically some conclusions are reported regarding the SKB equipment. Suggestions for further development are also given in the conclusion chapter.

  5. Stretchable electronics: materials, architectures and integrations

    Science.gov (United States)

    Ahn, Jong-Hyun; Je, Jung Ho

    2012-03-01

    Stretchable electronics, i.e. elastic electronics that can be bent and stretched, is a new, emerging class of electronics, based on building electronic circuits or devices on stretchable substrates. The potential applications range from fully conformable, stretchable, skin sensors for robotic devices, wearable electronic devices, to flesh-like biodevices. One of the challenges in the development of stretchable electronics is to retain full functionality under high external strains in stretching. In this paper, we review a few approaches recently developed for stretchable electronics and highlight recent research efforts on multi-directional writing for stretchable, three-dimensional structures.

  6. Self-limited kinetics of electron doping in correlated oxides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jikun, E-mail: jikunchen@seas.harvard.edu; Zhou, You; Jiang, Jun; Shi, Jian; Ramanathan, Shriram [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Middey, Srimanta; Chakhalian, Jak [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Chen, Nuofu [State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source, North China Electric Power University, Beijing 102206 (China); Chen, Lidong; Shi, Xun [CAS Key Laboratory of Materials for Energy Conversion, Shanghai institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Döbeli, Max [Laboratory of Ion Beam Physics, ETH Zurich, Zurich 8093 (Switzerland)

    2015-07-20

    Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni{sup 3+} are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem.

  7. Self-limited kinetics of electron doping in correlated oxides

    Science.gov (United States)

    Chen, Jikun; Zhou, You; Middey, Srimanta; Jiang, Jun; Chen, Nuofu; Chen, Lidong; Shi, Xun; Döbeli, Max; Shi, Jian; Chakhalian, Jak; Ramanathan, Shriram

    2015-07-01

    Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem.

  8. Electron correlation within the relativistic no-pair approximation

    Science.gov (United States)

    Almoukhalalati, Adel; Knecht, Stefan; Jensen, Hans Jørgen Aa.; Dyall, Kenneth G.; Saue, Trond

    2016-08-01

    This paper addresses the definition of correlation energy within 4-component relativistic atomic and molecular calculations. In the nonrelativistic domain the correlation energy is defined as the difference between the exact eigenvalue of the electronic Hamiltonian and the Hartree-Fock energy. In practice, what is reported is the basis set correlation energy, where the "exact" value is provided by a full Configuration Interaction (CI) calculation with some specified one-particle basis. The extension of this definition to the relativistic domain is not straightforward since the corresponding electronic Hamiltonian, the Dirac-Coulomb Hamiltonian, has no bound solutions. Present-day relativistic calculations are carried out within the no-pair approximation, where the Dirac-Coulomb Hamiltonian is embedded by projectors eliminating the troublesome negative-energy solutions. Hartree-Fock calculations are carried out with the implicit use of such projectors and only positive-energy orbitals are retained at the correlated level, meaning that the Hartree-Fock projectors are frozen at the correlated level. We argue that the projection operators should be optimized also at the correlated level and that this is possible by full Multiconfigurational Self-Consistent Field (MCSCF) calculations, that is, MCSCF calculations using a no-pair full CI expansion, but including orbital relaxation from the negative-energy orbitals. We show by variational perturbation theory that the MCSCF correlation energy is a pure MP2-like correlation expression, whereas the corresponding CI correlation energy contains an additional relaxation term. We explore numerically our theoretical analysis by carrying out variational and perturbative calculations on the two-electron rare gas atoms with specially tailored basis sets. In particular, we show that the correlation energy obtained by the suggested MCSCF procedure is smaller than the no-pair full CI correlation energy, in accordance with the underlying

  9. LDA+DMFT approach to ordering phenomena and the structural stability of correlated materials

    Science.gov (United States)

    Kuneš, J.; Leonov, I.; Augustinský, P.; Křápek, V.; Kollar, M.; Vollhardt, D.

    2017-07-01

    Materials with correlated electrons often respond very strongly to external or internal influences, leading to instabilities and states of matter with broken symmetry. This behavior can be studied theoretically either by evaluating the linear response characteristics, or by simulating the ordered phases of the materials under investigation. We developed the necessary tools within the dynamical mean-field theory (DMFT) to search for electronic instabilities in materials close to spin-state crossovers and to analyze the properties of the corresponding ordered states. This investigation, motivated by the physics of LaCoO3, led to a discovery of condensation of spinful excitons in the two-orbital Hubbard model with a surprisingly rich phase diagram. The results are reviewed in the first part of the article. Electronic correlations can also be the driving force behind structural transformations of materials. To be able to investigate correlation-induced phase instabilities we developed and implemented a formalism for the computation of total energies and forces within a fully charge self-consistent combination of density functional theory and DMFT. Applications of this scheme to the study of structural instabilities of selected correlated electron materials such as Fe and FeSe are reviewed in the second part of the paper.

  10. Transport Experiments on 2D Correlated Electron Physics in Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Daniel

    2014-03-24

    This research project was designed to investigate experimentally the transport properties of the 2D electrons in Si and GaAs, two prototype semiconductors, in several new physical regimes that were previously inaccessible to experiments. The research focused on the strongly correlated electron physics in the dilute density limit, where the electron potential energy to kinetic energy ratio rs>>1, and on the fractional quantum Hall effect related physics in nuclear demagnetization refrigerator temperature range on samples with new levels of purity and controlled random disorder.

  11. Computational studies of model disordered and strongly correlated electronic systems

    Science.gov (United States)

    Johri, Sonika

    The theory of non-interacting electrons in perfect crystals was completed soon after the advent of quantum mechanics. Though capable of describing electron behaviour in most simple solid state physics systems, this approach falls woefully short of describing condensed matter systems of interest today, and designing the quantum devices of the future. The reason is that nature is never free of disorder, and emergent properties arising from interactions can be clearly seen in the pure, low-dimensional materials that can be engineered today. In this thesis, I address some salient problems in disordered and correlated electronic systems using modern numerical techniques like sparse matrix diagonalization, density matrix renormalization group (DMRG), and large disorder renormalization group (LDRG) methods. The pioneering work of P. W. Anderson, in 1958, led to an understanding of how an electron can stop diffusing and become localized in a region of space when a crystal is sufficiently disordered. Thus disorder can lead to metal-insulator transitions, for instance, in doped semiconductors. Theoretical research on the Anderson disorder model since then has mostly focused on the localization-delocalization phase transition. The localized phase in itself was not thought to exhibit any interesting physics. Our work has uncovered a new singularity in the disorder-averaged inverse participation ratio of wavefunctions within the localized phase, arising from resonant states. The effects of system size, dimension and disorder distribution on the singularity have been studied. A novel wavefunction-based LDRG technique has been designed for the Anderson model which captures the singular behaviour. While localization is well established for a single electron in a disordered potential, the situation is less clear in the case of many interacting particles. Most studies of a many-body localized phase are restricted to a system which is isolated from its environment. Such a condition

  12. Sustainable Materials Management (SMM) Electronics Challenge Data

    Data.gov (United States)

    U.S. Environmental Protection Agency — On September 22, 2012, EPA launched the SMM Electronics Challenge. The Challenge encourages electronics manufacturers, brand owners and retailers to strive to send...

  13. METAL-INSULATOR TRANSITIONS AND STRONG ELECTRON CORRELATIONS

    NARCIS (Netherlands)

    MICHIELSEN, K

    1993-01-01

    An overview of lattice models for strongly correlated electrons is given. A detailed study is presented of a model recently introduced by Montorsi and Rasetti. Analytical, exact diagonalization and Quantum Monte Carlo techniques are employed to investigate the static and dynamic properties of this m

  14. Strongly correlated electrons at high pressure: an approach by inelastic X-Ray scattering; Electrons correles sous haute pression: une approche par diffusion inelastique des rayons X

    Energy Technology Data Exchange (ETDEWEB)

    Rueff, J.P

    2007-06-15

    Inelastic X-ray scattering (IXS) and associated methods has turn out to be a powerful alternative for high-pressure physics. It is an all-photon technique fully compatible with high-pressure environments and applicable to a vast range of materials. Standard focalization of X-ray in the range of 100 microns is typical of the sample size in the pressure cell. Our main aim is to provide an overview of experimental results obtained by IXS under high pressure in 2 classes of materials which have been at the origin of the renewal of condensed matter physics: strongly correlated transition metal oxides and rare-earth compounds. Under pressure, d and f-electron materials show behaviors far more complex that what would be expected from a simplistic band picture of electron delocalization. These spectroscopic studies have revealed unusual phenomena in the electronic degrees of freedom, brought up by the increased density, the changes in the charge-carrier concentration, the over-lapping between orbitals, and hybridization under high pressure conditions. Particularly we discuss about pressure induced magnetic collapse and metal-insulator transitions in 3d compounds and valence fluctuations phenomena in 4f and 5f compounds. Thanks to its superior penetration depth, chemical selectivity and resonant enhancement, resonant inelastic X-ray scattering has appeared extremely well suited to high pressure physics in strongly correlated materials. (A.C.)

  15. Advanced materials for thermal management of electronic packaging

    CERN Document Server

    Tong, Xingcun Colin

    2011-01-01

    The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry's ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining compatibility

  16. First Principles Calculations of Electronic Excitations in 2D Materials

    DEFF Research Database (Denmark)

    Rasmussen, Filip Anselm

    -thin electronics and high efficiency solar cells. Contrary to many other nano-materials, methods for large scale fabrication and patterning have already been demonstrated and the first real technological applications have already be showcased. Still the technology is very young and the number of well-studied 2D...... materials are few. However as the list of 2D materials is growing it is necessary to investigate their fundamental structural, electronic and optical properties. These are determined by the atomic and electronic structure of the materials that can quite accurately predicted by computational quantum...... as if it is being screened by the electrons in the material. This method has been very successful for calculating quasiparticle energies of bulk materials but results have been more varying for 2D materials. The reason is that the 2D confined electrons are less able to screen the added charge and some...

  17. Characteristics of the IAEA correlation monitor material for surveillance programmes

    Science.gov (United States)

    Wallin, Kim; Valo, Matti; Rintamaa, Rauno; Toerroenen, Kari; Ahlstrand, Ralf

    1989-08-01

    Correlation monitor material developed to meet the needs of the IAEA (International Atomic Energy Association) coordinated research program for optimizing reactor pressure vessel surveillance programs and their analysis is described. The material is intended to serve as a reference within the IAEA for future vessel surveillance programs throughout the world. The results of an extensive evaluation of the material in the as-received condition are presented. The mechanical properties measured at different temperatures include Charpy V notch and instrumented precracked Charpy data. Elastic-plastic fracture toughness is studied. Specimen size and geometry are varied in the tests. Correlations between different fracture properties are evaluated and discussed.

  18. Correlative stochastic optical reconstruction microscopy and electron microscopy.

    Directory of Open Access Journals (Sweden)

    Doory Kim

    Full Text Available Correlative fluorescence light microscopy and electron microscopy allows the imaging of spatial distributions of specific biomolecules in the context of cellular ultrastructure. Recent development of super-resolution fluorescence microscopy allows the location of molecules to be determined with nanometer-scale spatial resolution. However, correlative super-resolution fluorescence microscopy and electron microscopy (EM still remains challenging because the optimal specimen preparation and imaging conditions for super-resolution fluorescence microscopy and EM are often not compatible. Here, we have developed several experiment protocols for correlative stochastic optical reconstruction microscopy (STORM and EM methods, both for un-embedded samples by applying EM-specific sample preparations after STORM imaging and for embedded and sectioned samples by optimizing the fluorescence under EM fixation, staining and embedding conditions. We demonstrated these methods using a variety of cellular targets.

  19. Secondary electron imaging of monolayer materials inside a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Cretu, Ovidiu, E-mail: cretu.ovidiu@nims.go.jp; Lin, Yung-Chang; Suenaga, Kazutomo [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565 (Japan)

    2015-08-10

    A scanning transmission electron microscope equipped with a backscattered and secondary electron detector is shown capable to image graphene and hexagonal boron nitride monolayers. Secondary electron contrasts of the two lightest monolayer materials are clearly distinguished from the vacuum level. A signal difference between these two materials is attributed to electronic structure differences, which will influence the escape probabilities of the secondary electrons. Our results show that the secondary electron signal can be used to distinguish between the electronic structures of materials with atomic layer sensitivity, enhancing its applicability as a complementary signal in the analytical microscope.

  20. Conical Fourier shell correlation applied to electron tomograms.

    Science.gov (United States)

    Diebolder, C A; Faas, F G A; Koster, A J; Koning, R I

    2015-05-01

    The resolution of electron tomograms is anisotropic due to geometrical constraints during data collection, such as the limited tilt range and single axis tilt series acquisition. Acquisition of dual axis tilt series can decrease these effects. However, in cryo-electron tomography, to limit the electron radiation damage that occurs during imaging, the total dose should not increase and must be fractionated over the two tilt series. Here we set out to determine whether it is beneficial fractionate electron dose for recording dual axis cryo electron tilt series or whether it is better to perform single axis acquisition. To assess the quality of tomographic reconstructions in different directions here we introduce conical Fourier shell correlation (cFSCe/o). Employing cFSCe/o, we compared the resolution isotropy of single-axis and dual-axis (cryo-)electron tomograms using even/odd split data sets. We show that the resolution of dual-axis simulated and cryo-electron tomograms in the plane orthogonal to the electron beam becomes more isotropic compared to single-axis tomograms and high resolution peaks along the tilt axis disappear. cFSCe/o also allowed us to compare different methods for the alignment of dual-axis tomograms. We show that different tomographic reconstruction programs produce different anisotropic resolution in dual axis tomograms. We anticipate that cFSCe/o can also be useful for comparisons of acquisition and reconstruction parameters, and different hardware implementations.

  1. The effect of electron-electron correlation on the attoclock experiment

    CERN Document Server

    Emmanouilidou, A; Hofmann, C; Keller, U; Landsman, A S

    2015-01-01

    We investigate multi-electron effects in strong-field ionization of Helium using a semi-classical model that, unlike other commonly used theoretical approaches, takes into account electron-electron correlation. Our approach has an additional advantage of allowing to selectively switch off different contributions from the parent ion (such as the remaining electron or the nuclear charge) and thereby investigate in detail how the final electron angle in the attoclock experiment is influenced by these contributions. We find that the bound electron exerts a significant effect on the final electron momenta distribution that can, however, be accounted for by an appropriately selected mean field. Our results show excellent agreement with other widely used theoretical models done within a single active electron approximation.

  2. Improved cluster-in-molecule local correlation approach for electron correlation calculation of large systems.

    Science.gov (United States)

    Guo, Yang; Li, Wei; Li, Shuhua

    2014-10-02

    An improved cluster-in-molecule (CIM) local correlation approach is developed to allow electron correlation calculations of large systems more accurate and faster. We have proposed a refined strategy of constructing virtual LMOs of various clusters, which is suitable for basis sets of various types. To recover medium-range electron correlation, which is important for quantitative descriptions of large systems, we find that a larger distance threshold (ξ) is necessary for highly accurate results. Our illustrative calculations show that the present CIM-MP2 (second-order Møller-Plesser perturbation theory, MP2) or CIM-CCSD (coupled cluster singles and doubles, CCSD) scheme with a suitable ξ value is capable of recovering more than 99.8% correlation energies for a wide range of systems at different basis sets. Furthermore, the present CIM-MP2 scheme can provide reliable relative energy differences as the conventional MP2 method for secondary structures of polypeptides.

  3. Electron beam analysis of particulate cometary material

    Science.gov (United States)

    Bradley, John

    1989-01-01

    Electron microscopy will be useful for characterization of inorganic dust grains in returned comet nucleus samples. The choice of instrument(s) will depend primarily on the nature of the samples, but ultimately a variety of electron-beam methods could be employed. Scanning and analytical (transmission) electron microscopy are the logical choise for morphological, mineralogical, and bulk chemical analyses of dust grains removed from ices. It may also be possible to examine unmelted ice/dust mixtures using an environmental scanning electron microscope equipped with a cryo-transfer unit and a cold stage. Electron microscopic observations of comet nuclei might include: (1) porosities of dust grains; (2) morphologies and microstructures of individual mineral grains; (3) relative abundances of olivine, pyroxene, and glass; and (4) the presence of phases that might have resulted from aqueous alteration (layer silicates, carbonates, sulfates).

  4. Capacitance and compressibility of heterostructures with strong electronic correlations

    Science.gov (United States)

    Steffen, Kevin; Frésard, Raymond; Kopp, Thilo

    2017-01-01

    Strong electronic correlations related to a repulsive local interaction suppress the electronic compressibility in a single-band model, and the capacitance of a corresponding metallic film is directly related to its electronic compressibility. Both statements may be altered significantly when two extensions to the system are implemented which we investigate here: (i) we introduce an attractive nearest-neighbor interaction V as antagonist to the repulsive onsite repulsion U , and (ii) we consider nanostructured multilayers (heterostructures) assembled from two-dimensional layers of these systems. We determine the respective total compressibility κ and capacitance C of the heterostructures within a strong coupling evaluation, which builds on a Kotliar-Ruckenstein slave-boson technique. Whereas the capacitance C (n ) for electronic densities n close to half-filling is suppressed, illustrated by a correlation induced dip in C (n ) , it may be appreciably enhanced close to a van Hove singularity. Moreover, we show that the capacitance may be a nonmonotonic function of U close to half-filling for both attractive and repulsive V . The compressibility κ can differ from C substantially, as κ is very sensitive to internal electrostatic energies which in turn depend on the specific setup of the heterostructure. In particular, we show that a capacitor with a polar dielectric has a smaller electronic compressibility and is more stable against phase separation than a standard nonpolar capacitor with the same capacitance.

  5. Attosecond-correlated dynamics of two electrons in argon

    Indian Academy of Sciences (India)

    V Sharma; N Camus; B Fischer; M Kremer; A Rudenko; B Bergues; M Kuebel; N G Johnson; M F Kling; T Pfeifer; J Ullrich; R Moshammer

    2014-01-01

    In this work we explored strong field-induced decay of doubly excited transient Coulomb complex Ar** → Ar2++2. We measured the correlated two-electron emission as a function of carrier envelop phase (CEP) of 6 fs pulses in the non-sequential double ionization (NSDI) of argon. Classical model calculations suggest that the intermediate doubly excited Coulomb complex loses memory of its formation dynamics. We estimated the ionization time difference between the two electrons from NSDI of argon and it is 200 ± 100 as (N Camus et al, Phys. Rev. Lett. 108, 073003 (2012)).

  6. Strong electronic correlation effects in coherent multidimensional nonlinear optical spectroscopy.

    Science.gov (United States)

    Karadimitriou, M E; Kavousanaki, E G; Dani, K M; Fromer, N A; Perakis, I E

    2011-05-12

    We discuss a many-body theory of the coherent ultrafast nonlinear optical response of systems with a strongly correlated electronic ground state that responds unadiabatically to photoexcitation. We introduce a truncation of quantum kinetic density matrix equations of motion that does not rely on an expansion in terms of the interactions and thus applies to strongly correlated systems. For this we expand in terms of the optical field, separate out contributions to the time-evolved many-body state due to correlated and uncorrelated multiple optical transitions, and use "Hubbard operator" density matrices to describe the exact dynamics of the individual contributions within a subspace of strongly coupled states, including "pure dephasing". Our purpose is to develop a quantum mechanical tool capable of exploring how, by coherently photoexciting selected modes, one can trigger nonlinear dynamics of strongly coupled degrees of freedom. Such dynamics could lead to photoinduced phase transitions. We apply our theory to the nonlinear response of a two-dimensional electron gas (2DEG) in a magnetic field. We coherently photoexcite the two lowest Landau level (LL) excitations using three time-delayed optical pulses. We identify some striking temporal and spectral features due to dynamical coupling of the two LLs facilitated by inter-Landau-level magnetoplasmon and magnetoroton excitations and compare to three-pulse four-wave-mixing (FWM) experiments. We show that these features depend sensitively on the dynamics of four-particle correlations between an electron-hole pair and a magnetoplasmon/magnetoroton, reminiscent of exciton-exciton correlations in undoped semiconductors. Our results shed light into unexplored coherent dynamics and relaxation of the quantum Hall system (QHS) and can provide new insight into non-equilibrium co-operative phenomena in strongly correlated systems.

  7. Electron Correlation Microscopy: A New Technique for Studying Local Atom Dynamics Applied to a Supercooled Liquid.

    Science.gov (United States)

    He, Li; Zhang, Pei; Besser, Matthew F; Kramer, Matthew Joseph; Voyles, Paul M

    2015-08-01

    Electron correlation microscopy (ECM) is a new technique that utilizes time-resolved coherent electron nanodiffraction to study dynamic atomic rearrangements in materials. It is the electron scattering equivalent of photon correlation spectroscopy with the added advantage of nanometer-scale spatial resolution. We have applied ECM to a Pd40Ni40P20 metallic glass, heated inside a scanning transmission electron microscope into a supercooled liquid to measure the structural relaxation time τ between the glass transition temperature T g and the crystallization temperature, T x . τ determined from the mean diffraction intensity autocorrelation function g 2(t) decreases with temperature following an Arrhenius relationship between T g and T g +25 K, and then increases as temperature approaches T x . The distribution of τ determined from the g 2(t) of single speckles is broad and changes significantly with temperature.

  8. Dynamic defect correlations dominate activated electronic transport in SrTiO3

    Science.gov (United States)

    Snijders, Paul C.; Şen, Cengiz; McConnell, Michael P.; Ma, Ying-Zhong; May, Andrew F.; Herklotz, Andreas; Wong, Anthony T.; Ward, T. Zac

    2016-07-01

    Strontium titanate (SrTiO3, STO) is a critically important material for the study of emergent electronic phases in complex oxides, as well as for the development of applications based on their heterostructures. Despite the large body of knowledge on STO, there are still many uncertainties regarding the role of defects in the properties of STO, including their influence on ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures. We present a detailed analysis of the decay of persistent photoconductivity in STO single crystals with defect concentrations that are relatively low but significantly affect their electronic properties. The results show that photo-activated electron transport cannot be described by a superposition of the properties due to independent point defects as current models suggest but is, instead, governed by defect complexes that interact through dynamic correlations. These results emphasize the importance of defect correlations for activated electronic transport properties of semiconducting and insulating perovskite oxides.

  9. Amorphous electron-accepting materials for organic optoelectronics

    NARCIS (Netherlands)

    Ganesan, P.

    2007-01-01

    The importance of organic materials for use in electronic devices such as OLEDs, OFETs and photovoltaic cells has increased significantly over the past decade. Organic materials have been attractive candidates for such electronic devices because of their compatibility with high-throughput, low-cost

  10. Amorphous electron-accepting materials for organic optoelectronics

    NARCIS (Netherlands)

    Ganesan, P.

    2007-01-01

    The importance of organic materials for use in electronic devices such as OLEDs, OFETs and photovoltaic cells has increased significantly over the past decade. Organic materials have been attractive candidates for such electronic devices because of their compatibility with high-throughput, low-cost

  11. Temperature dependent electronic correlation effects in GdN

    OpenAIRE

    Sharma, A; Nolting, W.

    2006-01-01

    We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse...

  12. Quantitative Electron Tomography for Nanostructured Materials

    NARCIS (Netherlands)

    Friedrich, H.

    2009-01-01

    The controlled assembly of materials on the nanoscale has been a major focus of research across many scientific disciplines. In the nanometer size range, materials characteristics can be tuned not only by composition but more importantly by size and shape of constituent phases, giving rise to except

  13. Physics of strongly correlated electron systems (JJAP Series 11)

    Energy Technology Data Exchange (ETDEWEB)

    Komatsubara, T. [Tohoku Univ., Sendai (Japan); Fujii, H.; Onuki, Y.; Shiba, H. [eds.

    1999-02-28

    Strongly correlated f electron systems are one of the most important fields in solid state physics. The outstanding problems include small magnetic moments, heavy electrons with extremely large masses of 10-200m{sub 0}, exotic superconductivity not following the BCS theory and Kondo insulators with energy gaps at low temperatures. They originate from the 4f (5f) electrons in the Ce and Yb (U) compounds, which change their nature easily between localized and itinerant ones. To clarify these characteristic features, we started a new researching project named 'Physics of Strongly Correlated Electron Systems'. In the project high-quality single crystals were grown for CeRu{sub 2}Si{sub 2}, UPt{sub 3}, UPd{sub 2}Al{sub 3} and CeNiSn. For example, the mean free path of UPt{sub 3} grown in the project is beyond 1000 A, which is by one order longer than the coherence length of Cooper pairs. For these compounds, we measured the electrical resistivity, magnetoresistance, magnetization, specific heat and de Haas-van Alphen effect at temperatures lower than 0.1 K and fields higher than 10 T. Low temperatures, high fields and high pressures are fundamentally important conditions to study the ground state of the f-electron systems. This research report contains novel results obtained under this project such as a new quantum phase transition of CeRu{sub 2}Si{sub 2}, odd-parity superconductivity in UPt{sub 3}, a magnetic excitation gap associated with d-wave superconductivity of UPd{sub 2}Al{sub 3}, an anisotropic energy gap in CeNiSn with a close relationship of spin correlations. It contains also other achievements including a new development in quadrupole and charge orderings, non-Fermi liquid and low-density carrier system. The 94 papers are indexed individually. (J.P.N.)

  14. Helium vs. Proton Induced Displacement Damage in Electronic Materials

    Science.gov (United States)

    Ringo, Sawnese; Barghouty, A. F.

    2010-01-01

    In this project, the specific effects of displacement damage due to the passage of protons and helium nuclei on some typical electronic materials will be evaluated and contrasted. As the electronic material absorbs the energetic proton and helium momentum, degradation of performance occurs, eventually leading to overall failure. Helium nuclei traveling at the same speed as protons are expected to impart more to the material displacement damage; due to the larger mass, and thus momentum, of helium nuclei compared to protons. Damage due to displacement of atoms in their crystalline structure can change the physical properties and hence performance of the electronic materials.

  15. Correlation induced second plasmon in an electron liquid

    CERN Document Server

    Kalman, Gabor J; Silvestri, Luciano G

    2016-01-01

    We predict the existence of a second, low but finite frequency plasmon in a strongly coupled electron liquid. This excitation is maintained by the out-of-phase oscillations of the spin-up and spin-down densities of the electron liquid, but governed solely by the Coulomb interaction between the particles. Its frequency square is proportional to the overlap ($r=0$) (absolute) value of the spin-up/spin-down correlation function, and thus slightly affected by the degree of polarization of the electron liquid. We estimate the spectral weight of the mode, based on the assumption that interspecies drag is the main mechanism for damping in the strongly coupled domain. The spectral weight is manifest in the partial spin-resolved dynamical structure functions. A scattering experiment with polarized neutrons or polarized X-rays is proposed as a means to observe equilibrium fluctuations associated with this mode.

  16. The Delicate Balance of Static and Dynamic Electron Correlation

    CERN Document Server

    Stein, Christopher J; Reiher, Markus

    2016-01-01

    Multi-configurational approaches yield universal wave function parameterizations that can qualitatively well describe electronic structures along reaction pathways. For quantitative results, multi-reference perturbation theory is required to capture dynamic electron correlation from the otherwise neglected virtual orbitals. Still, the overall accuracy suffers from the finite size and choice of the active orbital space and peculiarities of the perturbation theory. Fortunately, the electronic wave functions at equilibrium structures of reactants and products can often be well described by single-reference methods and hence are accessible to accurate coupled cluster calculations. Here, we calculate the heterolytic double dissociation energy of four 3d-metallocenes with the complete active space self-consistent field method and compare to highly accurate coupled cluster data. Our coupled cluster data are well within the experimental error bars. This accuracy can also be approached by complete active space calcula...

  17. Thermopower of few-electron quantum dots with Kondo correlations

    Science.gov (United States)

    Ye, Lvzhou

    2015-03-01

    The thermopower of few-electron quantum dots is crucially influenced by on-dot electron-electron interactions, particularly in the presence of Kondo correlations. We present a comprehensive picture which elucidates the underlying relations between the thermopower and the spectral density function of two-level quantum dots. The effects of various electronic states, including the Kondo states originating from both spin and orbital degrees of freedom, are clearly unraveled. With these insights, we have exemplified an effective and viable way to control the sign of thermopower of Kondo-correlated quantum dots. This is realized by tuning the temperature and by selecting the appropriate level spacing and Coulomb repulsion strength. Such a physical picture is affirmed by accurate numerical data obtained with a hierarchical equations of motion approach. Our understandings and findings provide useful insights into controlling the direction of electric (heat) current through a quantum dot by applying a temperature (voltage) gradient across the two coupling leads. This may have important implications for novel thermoelectric applications of quantum dots. The support from the Natural Science Foundation of China (Grants No. 21033008, No. 21233007, No. 21303175, and No. 21322305) and the Strategic Priority Research Program (B) of the CAS (XDB01020000) is gratefully appreciated.

  18. Organic electronics II more materials and applications

    CERN Document Server

    Klauk, Hagen

    2012-01-01

    Like its predecessor this book is devoted to the materials, manufacturing and applications aspects of organic thin-film transistors. Onceagain authored by the most renowned experts from this fascinating and fast-moving area of research, it offers a joint perspective bothbroad and in-depth on the latest developments in the areas of materials chemistry, transport physics, materials characterization, manufacturing technology, and circuit integration of organic transistors. With its many figures and detailed index, this book once again also serves as a ready reference.

  19. Molecular Kohn-Sham exchange-correlation potential from the correlated ab initio electron density

    Science.gov (United States)

    Gritsenko, Oleg V.; van Leeuwen, Robert; Baerends, Evert Jan

    1995-09-01

    The molecular Kohn-Sham (KS) exchange-correlation potential vxc has been constructed for LiH from the correlated ab initio density ρ by means of the simple iterative procedure developed by van Leeuwen and Baerends [Phys. Rev. A 49, 2421 (1994)]. The corresponding KS energy characteristics, such as the kinetic energy of noninteracting particles Ts, kinetic part of the exchange-correlation energy Tc, and energy of the highest occupied molecular orbital ɛN, have been obtained with reasonable accuracy. A relation between the form of vxc and the electronic structure of LiH has been discussed. Test calculations for the two-electron H2 molecule have shown the efficiency of the procedure.

  20. Many-electron correlations in computations of sodium atom photoabsorption

    Directory of Open Access Journals (Sweden)

    Alexey V. Konovalov

    2016-03-01

    Full Text Available The role of many-electron correlations in photoabsorption processes has been investigated. The results of numerical computations of photoionization cross sections of sodium atom are presented. The many-body effects such as interchannel correlations resulting in autoionization resonance peaks, as well as effects of atomic core polarization were taken into account in the computations in terms of RPAE. Polarization corrections were accounted for using both static and dynamic polarization potentials. The influence of correlations on the position and the form of resonance peaks was studied. The obtained results demonstrate necessity of taking into account polarization effects, especially for clarification of autoionization resonance peaks position and the cross-section magnitudes in the low energy range. The best agreement with experimental data was reached with the model of dynamic polarization potential based on Dyson equation.

  1. New perspectives in the ultrafast spectroscopy of many-body excitations in correlated materials

    Science.gov (United States)

    Giannetti, C.

    2016-03-01

    Ultrafast spectroscopies constitute a fundamental tool to investigate the dynamics of non-equilibrium many-body states in correlated materials. Two-pulses (pump-probe) experiments have shed new light on the interplay between high-energy electronic excitations and the emerging low-energy properties, such as superconductivity and charge order, in many interesting materials. Here we will review some recent results on copper oxides and we will propose the use of high-resolution multi-dimensional techniques to investigate the decoherence processes of optical excitations in these systems. This novel piece of information is expected to open a new route toward the understanding of the fundamental interactions that lead to the exotic electronic and magnetic properties of correlated materials.

  2. Electronic, Vibrational and Thermoelectric Properties of Two-Dimensional Materials

    Science.gov (United States)

    Wickramaratne, Darshana

    The discovery of graphene's unique electronic and thermal properties has motivated the search for new two-dimensional materials. Examples of these materials include the layered two-dimensional transition metal dichalcogenides (TMDC) and metal mono-chalcogenides. The properties of the TMDCs (eg. MoS 2, WS2, TaS2, TaSe2) and the metal mono-chalcogenides (eg. GaSe, InSe, SnS) are diverse - ranging from semiconducting, semi-metallic and metallic. Many of these materials exhibit strongly correlated phenomena and exotic collective states such as exciton condensates, charge density waves, Lifshitz transitions and superconductivity. These properties change as the film thickness is reduced down to a few monolayers. We use first-principles simulations to discuss changes in the electronic and the vibrational properties of these materials as the film thickness evolves from a single atomic monolayer to the bulk limit. In the semiconducting TMDCs (MoS2, MoSe2, WS2 and WSe2) and monochalcogenides (GaS, GaSe, InS and InSe) we show confining these materials to their monolayer limit introduces large band degeneracies or non-parabolic features in the electronic structure. These changes in the electronic structure results in increases in the density of states and the number of conducting modes. Our first-principles simulations combined with a Landauer approach show these changes can lead to large enhancements up to an order of magnitude in the thermoelectric performance of these materials when compared to their bulk structure. Few monolayers of the TMDCs can be misoriented with respect to each other due to the weak van-der-Waals (vdW) force at the interface of two monolayers. Misorientation of the bilayer semiconducting TMDCs increases the interlayer van-der-Waals gap distance, reduces the interlayer coupling and leads to an increase in the magnitude of the indirect bandgap by up to 100 meV compared to the registered bilayer. In the semi-metallic and metallic TMDC compounds (TiSe2, Ta

  3. Electron beam recrystallization of amorphous semiconductor materials

    Science.gov (United States)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  4. Nanotechnology for electronic materials and devices

    CERN Document Server

    Korkin, Anatoli; Labanowski, Jan K

    2007-01-01

    Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone) Current status and future trends of micro and nanoelectronics research Written by leading experts in the corresponding research areas Excellent tutorial for graduate students and reference for "gurus" Provides a broad overlook and fundamentals of nanoscience and nanotechnology from chemistry to electronic devices.

  5. Evidence for weak electronic correlations in Fe-pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W.L.

    2010-04-29

    Using x-ray absorption and resonant inelastic x-ray scattering, charge dynamics at and near the Fe L edges is investigated in Fe pnictide materials, and contrasted to that measured in other Fe compounds. It is shown that the XAS and RIXS spectra for 122 and 1111 Fe pnictides are each qualitatively similar to Fe metal. Cluster diagonalization, multiplet, and density-functional calculations show that Coulomb correlations are much smaller than in the cuprates, highlighting the role of Fe metallicity and strong covalency in these materials. Best agreement with experiment is obtained using Hubbard parameters U {approx}< 2eV and J {approx} 0.8eV.

  6. Evidence for weak electronic correlations in Fe-Pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W. L.; Sorini, A. P.; Chen, C-C.; Moritz, B.; Lee, W.-S.; Vernay, F.; Olalde-Velasco, P.; Denlinger, J. D.; Delley, B.; Chu, J.-H.; Analytis, J.G.; Fisher, I. R.; Ren, Z. A.; Yang, J.; Lu, W.; Zhao, Z. X.; van den Brink, J.; Hussain, Z.; Shen, Z.-X.; Devereaux, T. P.

    2009-06-11

    Using x-ray absorption and resonant inelastic x-ray scattering, charge dynamics at and near the Fe L edges is investigated in Fe pnictide materials, and contrasted tothat measured in other Fe compounds. It is shown that the XAS and RIXS spectra for 122 and 1111 Fe pnictides are each qualitatively similar to Fe metal. Cluster diagonalization, multiplet, and density-functional calculations show that Coulomb correlations are much smaller than in the cuprates, highlighting the role of Fe metallicity and strong covalency in these materials. Best agreement with experiment is obtained using Hubbard parameters U<~;; 2eV and J ~;; 0.8eV.

  7. Optical correlators with fast updating speed using photorefractive semiconductor materials

    Science.gov (United States)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  8. Electron Correlation in the Final Continuum of Ionization Hydrogen by 150-eV Electron Impact

    Institute of Scientific and Technical Information of China (English)

    张程华; 臧树良; 王晓伟; 王京阳

    2004-01-01

    Electron correlation in triple differential cross sections for ionization of atomic hydrogen by electron impact is analysed for the case of coplanar asymmetric geometry within the framework of the two-potential formulae. Based on the approximations of projectile and faster-electron plane wave, the transition matrix element is analytically expressed to be a product of two factors: the correlation factor of two electrons in the final channel and the structure-scattering factor. The contribution of both the factors to the angular distribution of the triple differential cross section is calculated. The present results are compared with the experimental data and the other theoretical calculations for the incident energy of 150 eV.

  9. Materials for programmed, functional transformation in transient electronic systems.

    Science.gov (United States)

    Hwang, Suk-Won; Kang, Seung-Kyun; Huang, Xian; Brenckle, Mark A; Omenetto, Fiorenzo G; Rogers, John A

    2015-01-07

    Materials and device designs are presented for electronic systems that undergo functional transformation by a controlled time sequence in the dissolution of active materials and/or encapsulation layers. Demonstration examples include various biocompatible, multifunctional systems with autonomous behavior defined by materials selection and layout.

  10. X-ray and electron microscopy of actinide materials.

    Science.gov (United States)

    Moore, Kevin T

    2010-06-01

    Actinide materials demonstrate a wide variety of interesting physical properties in both bulk and nanoscale form. To better understand these materials, a broad array of microscopy techniques have been employed, including transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), energy dispersive X-ray spectroscopy (EDXS), high-angle annular dark-field imaging (HAADF), scanning electron microscopy (SEM), wavelength dispersive X-ray spectroscopy (WDXS), electron back scattered diffraction (EBSD), scanning tunneling microscopy (STM), atomic force microscopy (AFM), and scanning transmission X-ray microscopy (STXM). Here these techniques will be reviewed, highlighting advances made in the physics, materials science, chemistry, and biology of actinide materials through microscopy. Construction of a spin-polarized TEM will be discussed, considering its potential for examining the nanoscale magnetic structure of actinides as well as broader materials and devices, such as those for computational magnetic memory. Copyright 2009 Elsevier Ltd. All rights reserved.

  11. Correlation matrix renormalization approximation for total-energy calculations of correlated electron systems

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Y. X. [Ames Lab., Ames, IA (United States); Liu, Jun [Ames Lab., Ames, IA (United States); Wang, Cai-Zhuang [Ames Lab., Ames, IA (United States); Ho, Kai-Ming [Ames Lab., Ames, IA (United States)

    2014-01-23

    We generalized the commonly used Gutzwiller approximation for calculating the electronic structure and total energy of strongly correlated electron systems. In our method, the evaluation of one-body and two-body density matrix elements of the Hamiltonian is simplified using a renormalization approximation to achieve better scaling of the computational effort as a function of system size. To achieve a clear presentation of the concept and methodology, we describe the detailed formalism for a finite hydrogen system with minimal basis set. We applied the correlation matrix renormalization approximation approach to a H2 dimer and H8 cubic fragment with minimal basis sets, as well as a H2 molecule with a large basis set. The results compare favorably with sophisticated quantum chemical calculations. We believe our approach can serve as an alternative way to build up the exchange-correlation energy functional for an improved density functional theory description of systems with strong electron correlations.

  12. Neutron Scattering Investigations of Correlated Electron Systems and Neutron Instrumentation

    DEFF Research Database (Denmark)

    Holm, Sonja Lindahl

    are a unique probe for studying the atomic and molecular structure and dynamics of materials. Even though neutrons are very expensive to produce, the advantages neutrons provide overshadow the price. As neutrons interact weakly with materials compared to many other probes, e.g. electrons or photons......, it is possible to make a neutron scattering experiment through sample environment equipment like cryostats or pressure cells. Another advantage of neutron experiments is that the wavelength and energy of the neutron match the inter-atomic distances and basic excitations of solid materials. The scattering cross...... is not taken into account in previous reports on the field effect of magnetic scattering, since usually only L 0 is probed. A paper draft submitted for publication describing the results of elastic and inelastic neutron scattering experiments performed on the oxygen-doped La2CuO4+y HTSC is appended (Tc 40 K...

  13. Neutron Scattering Investigations of Correlated Electron Systems and Neutron Instrumentation

    DEFF Research Database (Denmark)

    Holm, Sonja Lindahl

    are a unique probe for studying the atomic and molecular structure and dynamics of materials. Even though neutrons are very expensive to produce, the advantages neutrons provide overshadow the price. As neutrons interact weakly with materials compared to many other probes, e.g. electrons or photons......, it is possible to make a neutron scattering experiment through sample environment equipment like cryostats or pressure cells. Another advantage of neutron experiments is that the wavelength and energy of the neutron match the inter-atomic distances and basic excitations of solid materials. The scattering cross...... magnetism. This is in contrast to what is observed as the critical temperature is slightly lower for this system compared to other co-doped systems, suggesting that the magnetic and superconducting phases co-exist. A published manuscript describes the study of magnetic and superconducting properties of Ba...

  14. Proteins as "dopable" bio-electronic materials

    Science.gov (United States)

    Cahen, David

    2013-02-01

    Proteins are surprisingly good solid-state electronic conductors. This holds also for proteins without any known biological electron transfer function. How do they do it? To answer this question we measure solid-state electron transport (ETp) across proteins that are "dry" (only tightly bound water, to retain the conformation, still present). We compare results for the electron transfer (ET) protein, Azurin (Az), the proton-pumping membrane protein Bacteriorhodopsin (bR), and for Human and Bovine Serum Albumin (HSA and BSA). Clear differences between these proteins are seen, which preserve their structure in the solid state measurement configuration. Importantly for future bioelectronics, the results are sensitive to protein modification, e.g., removing or disconnecting the retinal in bR and removing or replacing the Cu redox centre in Az. These cofactors can thus be viewed as natural dopants for proteins. Insight in the ETp mechanism comes from temperature-dependent studies. Az shows 40-360K temperature-independent ETp across its 3.5 nm long axis, until its denaturation temperature, indicative of tunneling. Cu removal, replacement (by Zn) or deuteration changes this to thermally activated ETp. This suggests hopping and involvement of the amide backbone in the ETp. The latter, which rhymes with indications from ETp experiments on oligopeptide and simulations of ET in proteins, opens the way for modeling what otherwise is an awfully complex system. Below 200K all proteins and their variants show temperature-independent ETp. We can furthermore make a totally electrically inactive protein, HSA, into an efficient ETp medium by doping it with natural poly-ene. Putting our data in perspective by comparing them to all known protein ETp data in the literature, we conclude that, in general, proteins are well described as dopable molecular wires.

  15. Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

    National Research Council Canada - National Science Library

    Lee, Myoung-Jae; Ahn, Ji-Hoon; Sung, Ji Ho; Heo, Hoseok; Jeon, Seong Gi; Lee, Woo; Song, Jae Yong; Hong, Ki-Ha; Choi, Byeongdae; Lee, Sung-Hoon; Jo, Moon-Ho

    2016-01-01

    ... as dimensions are reduced to approach the nanoscale were utilized. Here we present an approach to thermoelectric materials using tin disulfide, SnS2, nanosheets that demonstrated a negative correlation between σ and κ...

  16. Electron transfer in donor-acceptor systems: Many-particle effects and influence of electronic correlations

    Science.gov (United States)

    Tornow, S.; Tong, N.-H.; Bulla, R.

    2006-03-01

    We investigate electron transfer processes in donor-acceptor systems with a coupling of the electronic degrees of freedom to a common bosonic bath. The model allows to study many-particle effects and the influence of the local Coulomb interaction U between electrons on donor and acceptor sites. Using the non-perturbative numerical renormalization group approach we find distinct differences between the electron transfer characteristics in the single- and two-particle subspaces. We calculate the critical electron-boson coupling αc as a function of U and show results for density-density correlation functions in the whole parameter space. The possibility of many-particle (bipolaronic) and Coulomb-assisted transfer is discussed.

  17. An ab initio electronic transport database for inorganic materials

    Science.gov (United States)

    Ricci, Francesco; Chen, Wei; Aydemir, Umut; Snyder, G. Jeffrey; Rignanese, Gian-Marco; Jain, Anubhav; Hautier, Geoffroy

    2017-07-01

    Electronic transport in materials is governed by a series of tensorial properties such as conductivity, Seebeck coefficient, and effective mass. These quantities are paramount to the understanding of materials in many fields from thermoelectrics to electronics and photovoltaics. Transport properties can be calculated from a material's band structure using the Boltzmann transport theory framework. We present here the largest computational database of electronic transport properties based on a large set of 48,000 materials originating from the Materials Project database. Our results were obtained through the interpolation approach developed in the BoltzTraP software, assuming a constant relaxation time. We present the workflow to generate the data, the data validation procedure, and the database structure. Our aim is to target the large community of scientists developing materials selection strategies and performing studies involving transport properties.

  18. Surface structure and electronic properties of materials

    Science.gov (United States)

    Siekhaus, W. J.; Somorjai, G. A.

    1975-01-01

    A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

  19. Covariance and correlation estimation in electron-density maps.

    Science.gov (United States)

    Altomare, Angela; Cuocci, Corrado; Giacovazzo, Carmelo; Moliterni, Anna; Rizzi, Rosanna

    2012-03-01

    Quite recently two papers have been published [Giacovazzo & Mazzone (2011). Acta Cryst. A67, 210-218; Giacovazzo et al. (2011). Acta Cryst. A67, 368-382] which calculate the variance in any point of an electron-density map at any stage of the phasing process. The main aim of the papers was to associate a standard deviation to each pixel of the map, in order to obtain a better estimate of the map reliability. This paper deals with the covariance estimate between points of an electron-density map in any space group, centrosymmetric or non-centrosymmetric, no matter the correlation between the model and target structures. The aim is as follows: to verify if the electron density in one point of the map is amplified or depressed as an effect of the electron density in one or more other points of the map. High values of the covariances are usually connected with undesired features of the map. The phases are the primitive random variables of our probabilistic model; the covariance changes with the quality of the model and therefore with the quality of the phases. The conclusive formulas show that the covariance is also influenced by the Patterson map. Uncertainty on measurements may influence the covariance, particularly in the final stages of the structure refinement; a general formula is obtained taking into account both phase and measurement uncertainty, valid at any stage of the crystal structure solution.

  20. Correlated Electron Calculations with Hartree-Fock Scaling

    CERN Document Server

    Gebauer, Ralph; Car, Roberto

    2013-01-01

    We introduce an energy functional for ground-state electronic structure calculations with fundamental variables the natural spin orbitals and their joint occupation probabilities in an implied many-body trial wave function. We use a controlled approximation for the two-particle density matrix that greatly extends the accuracy compared to current functionals of the one-particle density matrix only. Algebraic scaling of computational cost with electron number is achieved in general, and Hartree-Fock scaling in the seniority-zero version of the theory. We present results obtained with the latter version for saturated small molecular systems for which highly accurate quantum chemical computations are available for comparison. The results are variational, capturing most of the correlation energy from equilibrium to dissociation.

  1. Holmium hafnate: An emerging electronic device material

    Energy Technology Data Exchange (ETDEWEB)

    Pavunny, Shojan P., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Scott, James F. [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE (United Kingdom)

    2015-03-16

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  2. Holmium hafnate: An emerging electronic device material

    Science.gov (United States)

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

    2015-03-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  3. A correlated-polaron electronic propagator: open electronic dynamics beyond the Born-Oppenheimer approximation.

    Science.gov (United States)

    Parkhill, John A; Markovich, Thomas; Tempel, David G; Aspuru-Guzik, Alan

    2012-12-14

    In this work, we develop an approach to treat correlated many-electron dynamics, dressed by the presence of a finite-temperature harmonic bath. Our theory combines a small polaron transformation with the second-order time-convolutionless master equation and includes both electronic and system-bath correlations on equal footing. Our theory is based on the ab initio Hamiltonian, and is thus well-defined apart from any phenomenological choice of basis states or electronic system-bath coupling model. The equation-of-motion for the density matrix we derive includes non-markovian and non-perturbative bath effects and can be used to simulate environmentally broadened electronic spectra and dissipative dynamics, which are subjects of recent interest. The theory also goes beyond the adiabatic Born-Oppenheimer approximation, but with computational cost scaling such as the Born-Oppenheimer approach. Example propagations with a developmental code are performed, demonstrating the treatment of electron-correlation in absorption spectra, vibronic structure, and decay in an open system. An untransformed version of the theory is also presented to treat more general baths and larger systems.

  4. The 2016 oxide electronic materials and oxide interfaces roadmap

    DEFF Research Database (Denmark)

    Lorenz, M.; Rao, M. S. Ramachandra; Venkatesan, T.

    2016-01-01

    ; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga-Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki...

  5. Electron Radiation Effects in Low-K Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Jenei, Z; Petkov, M; Asoka-Kumar, P; Miller, R; Volksen, W

    2003-10-22

    Positron annihilation spectroscopy was used to study microstructural changes in low-k interlevel dielectrics under emulated electron irradiation of up to 1 Mrad(Si) dose, and the impact of the degradation of materials properties on device performance.

  6. Metallic magneto-electronic materials and its expectations

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The basic characters, properties and possible applications of magneto-electronic materials with metal lic sandwich structure have been introduced. The expectation of its further development has been conjectured.

  7. Molecular modeling and multiscaling issues for electronic material applications

    CERN Document Server

    Iwamoto, Nancy; Yuen, Matthew; Fan, Haibo

    Volume 1 : Molecular Modeling and Multiscaling Issues for Electronic Material Applications provides a snapshot on the progression of molecular modeling in the electronics industry and how molecular modeling is currently being used to understand material performance to solve relevant issues in this field. This book is intended to introduce the reader to the evolving role of molecular modeling, especially seen through the eyes of the IEEE community involved in material modeling for electronic applications.  Part I presents  the role that quantum mechanics can play in performance prediction, such as properties dependent upon electronic structure, but also shows examples how molecular models may be used in performance diagnostics, especially when chemistry is part of the performance issue.  Part II gives examples of large-scale atomistic methods in material failure and shows several examples of transitioning between grain boundary simulations (on the atomistic level)and large-scale models including an example ...

  8. Vanderbilt free electron laser project in biomedical and materials research

    Science.gov (United States)

    Haglund, Richard F.; Tolk, N. H.

    1988-06-01

    The Medical Free Electron Laser Program was awarded to develop, construct and operate a free-electron laser facility dedicated to biomedical and materials studies, with particular emphases on: fundamental studies of absorption and localization of electromagnetic energy on and near material surfaces, especially through electronic and other selective, non-statistical processes; non-thermal photon-materials interactions (e.g., electronic bond-breaking or vibrational energy transfer) in physical and biological materials as well as in long-wavelength biopolymer dynamics; development of FEL-based methods to study drug action and to characterize biomolecular properties and metabolic processes in biomembranes; clinical applications in otolaryngology, neurosurgery, ophthalmology and radiology stressing the use of the laser for selective laser-tissue, laser-cellular and laser-molecule interactions in both therapeutic and diagnostic modalities.

  9. Electron correlations in single-electron capture from helium by fast protons and α particles

    Science.gov (United States)

    Mančev, Ivan; Milojević, Nenad

    2010-02-01

    Single-electron capture from heliumlike atomic systems by bare projectiles is investigated by means of the four-body boundary-corrected first Born approximation (CB1-4B). The effect of the dynamic electron correlation is explicitly taken into account through the complete perturbation potential. The quantum-mechanical post and prior transition amplitudes for single charge exchange encompassing symmetric and/or asymmetric collisions are derived in terms of two-dimensional real integrals in the case of the prior form and five-dimensional quadratures for the post form. An illustrative computation is performed for single-electron capture from helium by protons and α particles at intermediate and high impact energies. The role of dynamic correlations is examined as a function of increased projectile energy. The validity and utility of the proposed CB1-4B method is critically assessed in comparison with the existing experimental data for total cross sections, and excellent agreement is obtained.

  10. Strong electron correlations in biomimetic transition metal molecules

    Science.gov (United States)

    Labute, Montiago Xavier

    The first-row transition metals (Fe, Co, V,...) are key players in the active sites of proteins and enzymes responsible for diverse biological processes such as NO regulation and photosynthesis. Many small transition metal complexes possess chemical coordination environments in the vicinity of the metal atom that are reminiscent of these active sites. We have studied the electronic structure of these molecules and discussed the relevance for their biological analogues. The specific question on which we wish to focus is: Do strong correlations (resulting from the localized character of the TM 3d-orbitals) contribute significantly to the reaction energetics of these molecules and, if so, can these effects be observed by experiment? To accomplish these ends we focus on the cobalt valence tautomer molecules and the phenomenon of electron transfer in aqueous hexaammine cobalt ions. We utilize theoretical methods in order to study the cobalt valence tautomer molecules which undergo an interconversion with temperature that is reminiscent of the changes in structure and spin that the heme group experiences as the result of Fe-ligand interactions. We perform fully ab initio calculations using the GGA implementation of density functional theory with the computer code SIESTA. In addition, a simple Anderson Impurity Model has been employed that more properly accounts for the Coulomb interaction among the 3d electrons on the cobalt atom. The calculated Co K x-ray absorption near-edge spectra XANES agrees well with experimental data and a prediction for the Co L-edge XAS that could be tested in future experiments is also presented. We believe that there are structures in both spectra that may only be explained by a strong admixture of configurations. It is conjectured that strong electron correlations help explain the non-Arrhenius rate behavior observed in the high-spin to low-spin relaxation rate at low temperatures. Work on electron-transfer in CoNH32 +/3+6aq using these

  11. Efficient and accurate treatment of electron correlations with Correlation Matrix Renormalization theory

    Science.gov (United States)

    Yao, Y. X.; Liu, J.; Liu, C.; Lu, W. C.; Wang, C. Z.; Ho, K. M.

    2015-08-01

    We present an efficient method for calculating the electronic structure and total energy of strongly correlated electron systems. The method extends the traditional Gutzwiller approximation for one-particle operators to the evaluation of the expectation values of two particle operators in the many-electron Hamiltonian. The method is free of adjustable Coulomb parameters, and has no double counting issues in the calculation of total energy, and has the correct atomic limit. We demonstrate that the method describes well the bonding and dissociation behaviors of the hydrogen and nitrogen clusters, as well as the ammonia composed of hydrogen and nitrogen atoms. We also show that the method can satisfactorily tackle great challenging problems faced by the density functional theory recently discussed in the literature. The computational workload of our method is similar to the Hartree-Fock approach while the results are comparable to high-level quantum chemistry calculations.

  12. Electronic processes in non-crystalline materials

    CERN Document Server

    Mott, Nevill Francis

    2012-01-01

    Since the first edition of this highly successful book the field saw many great developments both in experimental and theoretical studies of electrical properties of non-crystalline solids. It became necessary to rewrite nearly the whole book, while the aims of the second edition remained the same: to set out the theoretical concepts, to test them by comparison with experiment for a wide variety of phenomena, and to apply them to non-crystalline materials. Sir Nevill Mott shared the1977 Nobel Prize for Physics, awarded for his research work in this field. The reissue of this book as part of th

  13. Electron paramagnetic resonance of material properties and processes

    Energy Technology Data Exchange (ETDEWEB)

    Brower, K. L.

    1980-01-01

    This paper demonstrates, primarily for the non-specialist and within the context of new and recent achievements, the diagnostic value of electron paramagnetic resonance (EPR) in the study of material properties and processes. I have selected three EPR studies which demonstrate the elegance and uniqueness of EPR in atomic defect studies and exemplify unusual achievements through the use of new techniques for material measurement and preparation. A brief introduction into the origin, interaction, and detection of unpaired electrons is included.

  14. Short-Range Correlation Models in Electronic Structure Theory

    Science.gov (United States)

    Goldey, Matthew Bryant

    Correlation methods within electronic structure theory focus on recovering the exact electron-electron interaction from the mean-field reference. For most chemical systems, including dynamic correlation, the correlation of the movement of electrons proves to be sufficient, yet exact methods for capturing dynamic correlation inherently scale polynomially with system size despite the locality of the electron cusp. This work explores a new family of methods for enhancing the locality of dynamic correlation methodologies with an aim toward improving accuracy and scalability. The introduction of range-separation into ab initio wavefunction methods produces short-range correlation methodologies, which can be supplemented with much faster approximate methods for long-range interactions. First, I examine attenuation of second-order Moller-Plesset perturbation theory (MP2) in the aug-cc-pVDZ basis. MP2 treats electron correlation at low computational cost, but suffers from basis set superposition error (BSSE) and fundamental inaccuracies in long-range contributions. The cost differential between complete basis set (CBS) and small basis MP2 restricts system sizes where BSSE can be removed. Range-separation of MP2 could yield more tractable and/or accurate forms for short- and long-range correlation. Retaining only short-range contributions proves to be effective for MP2 in the small aug-cc-pVDZ (aDZ) basis. Using one range-separation parameter within either the complementary error function (erfc) or a sum of two error functions (terfc), superior behavior is obtained versus both MP2/aDZ and MP2/CBS for inter- and intra-molecular test sets. Attenuation of the long-range helps to cancel both BSSE and intrinsic MP2 errors. Direct scaling of the MP2 correlation energy (SMP2) proves useful as well. The resulting SMP2/aDZ, MP2(erfc, aDZ), and MP2(terfc, aDZ) methods perform far better than MP2/aDZ across systems with hydrogen-bonding, dispersion, and mixed interactions at a

  15. Correlative infrared-electron nanoscopy reveals the local structure-conductivity relationship in zinc oxide nanowires.

    Science.gov (United States)

    Stiegler, J M; Tena-Zaera, R; Idigoras, O; Chuvilin, A; Hillenbrand, R

    2012-01-01

    High-resolution characterization methods play a key role in the development, analysis and optimization of nanoscale materials and devices. Because of the various material properties, only a combination of different characterization techniques provides a comprehensive understanding of complex functional materials. Here we introduce correlative infrared-electron nanoscopy, a novel method yielding transmission electron microscope and infrared near-field images of one and the same nanostructure. While transmission electron microscopy provides structural information up to the atomic level, infrared near-field imaging yields nanoscale maps of chemical composition and conductivity. We demonstrate the method's potential by studying the relation between conductivity and crystal structure in ZnO nanowire cross-sections. The combination of infrared conductivity maps and the local crystal structure reveals a radial free-carrier gradient, which inversely correlates to the density of extended crystalline defects. Our method opens new avenues for studying the local interplay between structure, conductivity and chemical composition in widely different material systems.

  16. Correlative infrared-electron nanoscopy reveals the local structure-conductivity relationship in zinc oxide nanowires

    Science.gov (United States)

    Stiegler, J. M.; Tena-Zaera, R.; Idigoras, O.; Chuvilin, A.; Hillenbrand, R.

    2012-10-01

    High-resolution characterization methods play a key role in the development, analysis and optimization of nanoscale materials and devices. Because of the various material properties, only a combination of different characterization techniques provides a comprehensive understanding of complex functional materials. Here we introduce correlative infrared-electron nanoscopy, a novel method yielding transmission electron microscope and infrared near-field images of one and the same nanostructure. While transmission electron microscopy provides structural information up to the atomic level, infrared near-field imaging yields nanoscale maps of chemical composition and conductivity. We demonstrate the method's potential by studying the relation between conductivity and crystal structure in ZnO nanowire cross-sections. The combination of infrared conductivity maps and the local crystal structure reveals a radial free-carrier gradient, which inversely correlates to the density of extended crystalline defects. Our method opens new avenues for studying the local interplay between structure, conductivity and chemical composition in widely different material systems.

  17. A correlated-polaron electronic propagator: open electronic dynamics beyond the Born-Oppenheimer approximation

    CERN Document Server

    Parkhill, John A; Tempel, David G; Aspuru-Guzik, Alan

    2012-01-01

    In this work we develop a theory of correlated many-electron dynamics dressed by the presence of a finite-temperature harmonic bath. The theory is based on the ab-initio Hamiltonian, and thus well-defined apart from any phenomenological choice of collective basis states or electronic coupling model. The equation-of-motion includes some bath effects non-perturbatively, and can be used to simulate line- shapes beyond the Markovian approximation and open electronic dynamics which are subjects of renewed recent interest. Energy conversion and transport depend critically on the ratio of electron-electron coupling to bath-electron coupling, which is a fitted parameter if a phenomenological basis of many-electron states is used to develop an electronic equation of motion. Since the present work doesn't appeal to any such basis, it avoids this ambiguity. The new theory produces a level of detail beyond the adiabatic Born-Oppenheimer states, but with cost scaling like the Born-Oppenheimer approach. While developing th...

  18. MATERIALS WITH COMPLEX ELECTRONIC/ATOMIC STRUCTURES

    Energy Technology Data Exchange (ETDEWEB)

    D. M. PARKIN; L. CHEN; ET AL

    2000-09-01

    We explored both experimentally and theoretically the behavior of materials at stresses close to their theoretical strength. This involves the preparation of ultra fine scale structures by a variety of fabrication methods. In the past year work has concentrated on wire drawing of in situ composites such as Cu-Ag and Cu-Nb. Materials were also fabricated by melting alloys in glass and drawing them into filaments at high temperatures by a method known as Taylor wire technique. Cu-Ag microwires have been drawn by this technique to produce wires 10 {micro}m in diameter that consist of nanoscale grains of supersaturated solid solution. Organogels formed from novel organic gelators containing cholesterol tethered to squaraine dyes or trans-stilbene derivatives have been studied from several different perspectives. The two types of molecules are active toward several organic liquids, gelling in some cases at w/w percentages as low as 0.1. While relatively robust, acroscopically dry gels are formed in several cases, studies with a variety of probes indicate that much of the solvent may exist in domains that are essentially liquid-like in terms of their microenvironment. The gels have been imaged by atomic force microscopy and conventional and fluorescence microscopy, monitoring both the gelator fluorescence in the case of the stilbene-cholesterol gels and, the fluorescence of solutes dissolved in the solvent. Remarkably, our findings show that several of the gels are composed of similarly appearing fibrous structures visible at the nano-, micro-, and macroscale.

  19. A Partitioned Correlation Function Interaction approach for describing electron correlation in atoms

    CERN Document Server

    Verdebout, S; Jönsson, P; Gaigalas, G; Fischer, C Froese; Godefroid, M

    2013-01-01

    Traditional multiconfiguration Hartree-Fock (MCHF) and configuration interaction (CI) methods are based on a single orthonormal orbital basis (OB). For atoms with complicated shell structures, a large OB is needed to saturate all the electron correlation effects. The large OB leads to massive configuration state function (CSF) expansions that are difficult to handle. We show that it is possible to relax the orthonormality restriction on the OB and break down the originally large calculations to a set of smaller ones that can be run in parallel. Each calculation determines a partitioned correlation function (PCF) that accounts for a specific correlation effect. The PCFs are built on optimally localized orbital sets and are added to a zero-order multireference (MR) function to form a total wave function. The mixing coefficients of the PCFs are fixed from a small generalized eigenvalue problem. The required matrices are computed using a biorthonormal transformation technique. The new method, called partitioned c...

  20. Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Todorovic, J; Van Helvoort, A T J [Department of Physics, Norwegian University of Science and Technology, NO-7491, Trondheim (Norway); Moses, A F; Karlberg, T; Olk, P; Dheeraj, D L; Fimland, B O; Weman, H, E-mail: a.helvoort@ntnu.no [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491, Trondheim (Norway)

    2011-08-12

    To correlate optical properties to structural characteristics, we developed a robust strategy for characterizing the same individual heterostructured semiconductor nanowires (NWs) by alternating low temperature micro-photoluminescence ({mu}-PL), low voltage scanning (transmission) electron microscopy and conventional transmission electron microscopy. The NWs used in this work were wurtzite GaAs core with zinc blende GaAsSb axial insert and AlGaAs radial shell grown by molecular beam epitaxy. The series of experiments demonstrated that high energy (200 kV) electrons are detrimental for the optical properties, whereas medium energy (5-30 kV) electrons do not affect the PL response. Thus, such medium energy electrons can be used to select NWs for correlated optical-structural studies prior to {mu}-PL or in NW device processing. The correlation between the three main {mu}-PL bands and crystal phases of different compositions, present in this heterostructure, is demonstrated for selected NWs. The positions where a NW fractures during specimen preparation can considerably affect the PL spectra of the NW. The effects of crystal-phase variations and lattice defects on the optical properties are discussed. The established strategy can be applied to other nanosized electro-optical materials, and other characterization tools can be incorporated into this routine.

  1. Two-dimensional materials and their prospects in transistor electronics.

    Science.gov (United States)

    Schwierz, F; Pezoldt, J; Granzner, R

    2015-05-14

    During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

  2. Materials for high-density electronic packaging and interconnection

    Science.gov (United States)

    1990-01-01

    Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production.

  3. Supramolecular Soft Matter Applications in Materials and Organic Electronics

    CERN Document Server

    Nakanishi, Takashi

    2011-01-01

    The pivotal text that bridges the gap between fundamentals and applications of soft matter in organic electronics Covering an expanding and highly coveted subject area, Supramolecular Soft Matter enlists the services of leading researchers to help readers understand and manipulate the electronic properties of supramolecular soft materials for use in organic opto-electronic devices, such as photovoltaics and field effect transistors, some of the most desired materials for energy conservation. Rather than offering a compilation of current trends in supramolecular soft matter, this book bridges

  4. Surveyor television camera, selected materials and electronic components, Appendix C

    Science.gov (United States)

    Carroll, W. F.

    1972-01-01

    The locations of various parts of the Surveyor camera are presented. Tables were prepared with emphasis on: (1) exterior parts and surfaces that are directly exposed to space, (2) parts that shield others from space radiation, (3) representative or unique materials, and (4) electronic devices that may contain unique or well-characterized materials.

  5. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    Science.gov (United States)

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted.

  6. Electronic structure of a striped nickelate studied by the exact exchange for correlated electrons (EECE) approach

    KAUST Repository

    Schwingenschlögl, Udo

    2009-12-01

    Motivated by a RIXS study of Wakimoto, et al.(Phys. Rev. Lett., 102 (2009) 157001) we use density functional theory to analyze the magnetic order in the nickelate La5/3Sr1/3NiO4 and the details of its crystal and electronic structure. We compare the generalized gradient approximation to the hybrid functional approach of exact exchange for correlated electrons (EECE). In contrast to the former, the latter reproduces the insulating state of the compound and the midgap states. The EECE approach, in general, appears to be appropriate for describing stripe phases in systems with orbital degrees of freedom. Copyright © EPLA, 2009.

  7. Electron Microscopy of Biological Materials at the Nanometer Scale

    Science.gov (United States)

    Kourkoutis, Lena Fitting; Plitzko, Jürgen M.; Baumeister, Wolfgang

    2012-08-01

    Electron microscopy of biological matter uses three different imaging modalities: (a) electron crystallography, (b) single-particle analysis, and (c) electron tomography. Ideally, these imaging modalities are applied to frozen-hydrated samples to ensure an optimal preservation of the structures under scrutiny. Cryo-electron microscopy of biological matter has made important advances in the past decades. It has become a research tool that further expands the scope of structural research into unique areas of cell and molecular biology, and it could augment the materials research portfolio in the study of soft and hybrid materials. This review addresses how researchers using transmission electron microscopy can derive structural information at high spatial resolution from fully hydrated specimens, despite their sensitivity to ionizing radiation, despite the adverse conditions of high vacuum for samples that have to be kept in aqueous environments, and despite their low contrast resulting from weakly scattering building blocks.

  8. Emerging challenges and materials for thermal management of electronics

    Directory of Open Access Journals (Sweden)

    Arden L. Moore

    2014-05-01

    Full Text Available The rapid development of faster, cheaper, and more powerful computing has led to some of the most important technological and societal advances in modern history. However, the physical means associated with enhancing computing capabilities at the device and die levels have also created a very challenging set of circumstances for keeping electronic devices cool, a critical factor in determining their speed, efficiency, and reliability. With advances in nanoelectronics and the emergence of new application areas such as three-dimensional chip stack architectures and flexible electronics, now more than ever there are both needs and opportunities for novel materials to help address some of these pressing thermal management challenges. In this paper a number of cubic crystals, two-dimensional layered materials, nanostructure networks and composites, molecular layers and surface functionalization, and aligned polymer structures are examined for potential applications as heat spreading layers and substrates, thermal interface materials, and underfill materials in future-generation electronics.

  9. Quadrupolar Kondo effect in uranium heavy-electron materials?

    Science.gov (United States)

    Cox, D. L.

    1987-01-01

    The possibility of an electric quadrupole Kondo effect for a non-Kramers doublet on a uranium (U) ion is a cubic metallic host is demonstrated by model calculations showing a Kondo upturn in the resistivity, universal quenching of the quadrupolar moment, and a heavy-electron anomaly in the electronic specific heat. With inclusion of excited crystal-field levels, some of the unusual magnetic-response data in the heavy-electron superconductor UBe13 may be understood. Structural phase transitions at unprecedented low temperatures may occur in U-based heavy-electron materials.

  10. Materials with low emission of secondary electrons for Space applications; Materiales de baja emision de electrones secundarios para el Espacio

    Energy Technology Data Exchange (ETDEWEB)

    Montero, I.; Aguilera, L.; Nistor, V.; Galan, L.

    2010-07-01

    Coatings were studied low secondary electron emission preventing effect multipactor in radio-frequency devices, high-power space satellites aboard. In particular, it is stable materials with high electrical conductivity and good adhesion to substrate: silicon and titanium nitride and silicon carbon. The coefficient of secondary emission electrons have been correlated with the power multipactor threshold. The surface composition and stability of the materials when exposed to air have been studied by photoemission spectroscopy X-ray The results have been simulated using Monte Carlo methods. Because satellites are subjected to irradiation with photons, in addition to the bombardment with electrons in the laboratory also been experimentally simulated photoemission conditions in space. (Author) 10 refs.

  11. Electronic properties of antiferromagnetic UBi2 metal by exact exchange for correlated electrons method

    Directory of Open Access Journals (Sweden)

    E Ghasemikhah

    2012-03-01

    Full Text Available This study investigated the electronic properties of antiferromagnetic UBi2 metal by using ab initio calculations based on the density functional theory (DFT, employing the augmented plane waves plus local orbital method. We used the exact exchange for correlated electrons (EECE method to calculate the exchange-correlation energy under a variety of hybrid functionals. Electric field gradients (EFGs at the uranium site in UBi2 compound were calculated and compared with the experiment. The EFGs were predicted experimentally at the U site to be very small in this compound. The EFG calculated by the EECE functional are in agreement with the experiment. The densities of states (DOSs show that 5f U orbital is hybrided with the other orbitals. The plotted Fermi surfaces show that there are two kinds of charges on Fermi surface of this compound.

  12. Correlation between metabolic reduction rates and electron affinity of nitroheterocycles

    Energy Technology Data Exchange (ETDEWEB)

    Olive, P.L.

    1979-11-01

    Nitroheterocyclic compounds can selectively sensitize hypoxic (tumor) cells to radiation damage in vitro. However, results in vivo have generally been less optimistic, inasmuch as metabolic reduction of these drugs not only limits effective lifetime but also produces metabolic intermediates with marked cytotoxic and carcinogenic activity. With three reducing systems in vitro, E. coli B/r, mouse L-929 cells, and mouse liver microsomes, the rate of nitroreduction of several nitroheterocycles was found to be proportional to their electron affinity. Since nitroreduction has previously been correlated with subsequent cytotoxicity, DNA damage, and mutagenicity, the present results suggest that improvements in the therapeutic efficacy of nitroheterocycles (i.e., sensitization without toxicity and carcinogenicity) will be dependent on development of drugs with more appropriate pharmacological properties.

  13. Correlated electron-hole plasma in organometal perovskites

    Science.gov (United States)

    Saba, Michele; Cadelano, Michele; Marongiu, Daniela; Chen, Feipeng; Sarritzu, Valerio; Sestu, Nicola; Figus, Cristiana; Aresti, Mauro; Piras, Roberto; Geddo Lehmann, Alessandra; Cannas, Carla; Musinu, Anna; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni

    2014-09-01

    Organic-inorganic perovskites are a class of solution-processed semiconductors holding promise for the realization of low-cost efficient solar cells and on-chip lasers. Despite the recent attention they have attracted, fundamental aspects of the photophysics underlying device operation still remain elusive. Here we use photoluminescence and transmission spectroscopy to show that photoexcitations give rise to a conducting plasma of unbound but Coulomb-correlated electron-hole pairs at all excitations of interest for light-energy conversion and stimulated optical amplification. The conductive nature of the photoexcited plasma has crucial consequences for perovskite-based devices: in solar cells, it ensures efficient charge separation and ambipolar transport while, concerning lasing, it provides a low threshold for light amplification and justifies a favourable outlook for the demonstration of an electrically driven laser. We find a significant trap density, whose cross-section for carrier capture is however low, yielding a minor impact on device performance.

  14. Electron holography for the study of nanomagnetic materials

    DEFF Research Database (Denmark)

    Thomas, John Meurig; Simpson, Edward T.; Kasama, Takeshi

    2008-01-01

    nanotube. Whereas most chemists are aware that electron microscopy readily identifies crystallographic symmetries and phases, solves structures, and, in conjunction with electron energy-loss spectroscopy, yields valence states and electronic information of materials, relatively few know that it can also...... provide important quantitative information, with nanometer-scale spatial resolution, pertaining to such materials’ magnetic properties. In this Account, with the aid of representative examples embracing solid-state chemistry, geochemistry, and bio-inorganic phenomena, we illustrate how off-axis electron......Transmission electron microscopes fitted with field-emission guns (to provide coherent electron waves) can be adapted to record the magnetic fields within and surrounding nanoparticles or metal clusters, for example, the lines of force of a nanoferromagnet encapsulated within a multiwalled carbon...

  15. Correlating the motion of electrons and nuclei with two-dimensional electronic-vibrational spectroscopy.

    Science.gov (United States)

    Oliver, Thomas A A; Lewis, Nicholas H C; Fleming, Graham R

    2014-07-15

    Multidimensional nonlinear spectroscopy, in the electronic and vibrational regimes, has reached maturity. To date, no experimental technique has combined the advantages of 2D electronic spectroscopy and 2D infrared spectroscopy, monitoring the evolution of the electronic and nuclear degrees of freedom simultaneously. The interplay and coupling between the electronic state and vibrational manifold is fundamental to understanding ensuing nonradiative pathways, especially those that involve conical intersections. We have developed a new experimental technique that is capable of correlating the electronic and vibrational degrees of freedom: 2D electronic-vibrational spectroscopy (2D-EV). We apply this new technique to the study of the 4-(di-cyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H-pyran (DCM) laser dye in deuterated dimethyl sulfoxide and its excited state relaxation pathways. From 2D-EV spectra, we elucidate a ballistic mechanism on the excited state potential energy surface whereby molecules are almost instantaneously projected uphill in energy toward a transition state between locally excited and charge-transfer states, as evidenced by a rapid blue shift on the electronic axis of our 2D-EV spectra. The change in minimum energy structure in this excited state nonradiative crossing is evident as the central frequency of a specific vibrational mode changes on a many-picoseconds timescale. The underlying electronic dynamics, which occur on the hundreds of femtoseconds timescale, drive the far slower ensuing nuclear motions on the excited state potential surface, and serve as a excellent illustration for the unprecedented detail that 2D-EV will afford to photochemical reaction dynamics.

  16. Signals of strong electronic correlation in ion scattering processes

    Science.gov (United States)

    Bonetto, F.; Gonzalez, C.; Goldberg, E. C.

    2016-05-01

    Previous measurements of neutral atom fractions for S r+ scattered by gold polycrystalline surfaces show a singular dependence with the target temperature. There is still not a theoretical model that can properly describe the magnitude and the temperature dependence of the neutralization probabilities found. Here, we applied a first-principles quantum-mechanical theoretical formalism to describe the time-dependent scattering process. Three different electronic correlation approaches consistent with the system analyzed are used: (i) the spinless approach, where two charge channels are considered (S r0 and S r+ ) and the spin degeneration is neglected; (ii) the infinite-U approach, with the same charge channels (S r0 and S r+ ) but considering the spin degeneration; and (iii) the finite-U approach, where the first ionization and second ionization energy levels are considered very, but finitely, separated. Neutral fraction magnitudes and temperature dependence are better described by the finite-U approach, indicating that e -correlation plays a significant role in charge-transfer processes. However, none of them is able to explain the nonmonotonous temperature dependence experimentally obtained. Here, we suggest that small changes in the surface work function introduced by the target heating, and possibly not detected by experimental standard methods, could be responsible for that singular behavior. Additionally, we apply the same theoretical model using the infinite-U approximation for the Mg-Au system, obtaining an excellent description of the experimental neutral fractions measured.

  17. APPLICATION OF NOVEL NEUTRON CORRELATION TECHNIQUES TO NUCLEAR MATERIAL MEASUREMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Sale, K

    2006-06-09

    Confirmation of the fissile mass of a system containing plutonium can be done using neutron multiplicity techniques. This can be accomplished with a detector system that is smaller and less costly than a standard neutron multiplicity counter (NMC). Also the fissile mass of a uranium containing system can be confirmed by passive means. Recent work at Lawrence Livermore National Laboratory has demonstrated that simple slab neutron detectors and a novel approach to data acquisition and analysis can be used to make an accurate measurement of the mass of fissile materials. Purely passive measurement of kilogram quantities of highly enriched uranium (HEU) have also been shown to be feasible. In this paper we discuss calculational tools for assessing the application of these techniques to fissile material transparency regimes. The tools required to adequately model the correlations and their application will be discussed.

  18. Thermo-analysis of Preparation Process for Electron Trapping Materials

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The heated process of raw materials for electron trapping materials (ETM) is investigated by thermo-analysis method. The temperature ranges of raw materials experienced some physical and chemical change processes, such as dehydration, organic solvent removal, crystal sulphur burning, oxidation of alkaline earth sulfides and solid phase reaction (rare earth doped) and so on, are obtained. The experimental results also show that the presence of trace oxygen in shielded gas is very harmful to prepare the ETM.The raw material thermo-analysis results provide very important experimental reference for optimizing the ETM preparation techniques.

  19. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  20. Novel materials and applications of electronic noses and tongues.

    Science.gov (United States)

    Gouma, Perena; Sberveglieri, Giorgio

    2004-10-01

    This introductory article describes the content of the October 2004 issue of MRS Bulletin focusing on novel materials and applications of electronic noses and tongues. The articles in this issue review the state of the art in materials, devices, and data processing algorithms used in electronic olfaction and taste systems. The most common gas- and liquid-phase analyte detection tools are presented and compared with traditional chemical analysis instrumentation such as gas chromatography/mass spectroscopy systems. Metal oxides, polymer/polymer composites, and dyes are covered in these articles as key sensing materials. Resistive, optical, electrochemical, and other types of electronic nose and tongue systems are reviewed, and their use in diverse applications, including environmental and food-quality monitoring and medical diagnostics, is discussed.

  1. Ionization of pyridine: Interplay of orbital relaxation and electron correlation

    Science.gov (United States)

    Trofimov, A. B.; Holland, D. M. P.; Powis, I.; Menzies, R. C.; Potts, A. W.; Karlsson, L.; Gromov, E. V.; Badsyuk, I. L.; Schirmer, J.

    2017-06-01

    The valence shell ionization spectrum of pyridine was studied using the third-order algebraic-diagrammatic construction approximation scheme for the one-particle Green's function and the outer-valence Green's function method. The results were used to interpret angle resolved photoelectron spectra recorded with synchrotron radiation in the photon energy range of 17-120 eV. The lowest four states of the pyridine radical cation, namely, 2A2(1 a2 -1), 2A1(7 a1 -1), 2B1(2 b1 -1), and 2B2(5 b2 -1), were studied in detail using various high-level electronic structure calculation methods. The vertical ionization energies were established using the equation-of-motion coupled-cluster approach with single, double, and triple excitations (EOM-IP-CCSDT) and the complete basis set extrapolation technique. Further interpretation of the electronic structure results was accomplished using Dyson orbitals, electron density difference plots, and a second-order perturbation theory treatment for the relaxation energy. Strong orbital relaxation and electron correlation effects were shown to accompany ionization of the 7a1 orbital, which formally represents the nonbonding σ-type nitrogen lone-pair (nσ) orbital. The theoretical work establishes the important roles of the π-system (π-π* excitations) in the screening of the nσ-hole and of the relaxation of the molecular orbitals in the formation of the 7a1(nσ)-1 state. Equilibrium geometric parameters were computed using the MP2 (second-order Møller-Plesset perturbation theory) and CCSD methods, and the harmonic vibrational frequencies were obtained at the MP2 level of theory for the lowest three cation states. The results were used to estimate the adiabatic 0-0 ionization energies, which were then compared to the available experimental and theoretical data. Photoelectron anisotropy parameters and photoionization partial cross sections, derived from the experimental spectra, were compared to predictions obtained with the continuum

  2. Dual nature of the 5f electrons in plutonium materials

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, J.J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)]. E-mail: jjoyce@lanl.gov; Wills, J.M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Durakiewicz, T. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Butterfield, M.T. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Guziewicz, E. [Institute of Physics, Polish Academy of Sciences, Warszawa (Poland); Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Moore, D.P. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Sarrao, J.L. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Morales, L.A. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Arko, A.J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Eriksson, O. [Department of Physics, Uppsala University, Box 530 (Sweden); Delin, A. [Materialvetenskap, KTH, SE-10044 Stockholm (Sweden); Graham, K.S. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-05-01

    The electronic structure of select Pu materials is examined by means of photoemission (PES) and model calculations. We present the first photoemission results and electronic structure calculations for the material PuIn{sub 3}. Results for Pu materials, including the cubic delta-phase metal and the superconductor PuCoGa{sub 5}, give indication of the 5f electrons exhibiting both localized and itinerant character. These new results for PuIn{sub 3} place this compounds also in the 5f dual nature category. The dual nature of the Pu 5f electrons demarks the boundary between localized and itinerant 5f character in the actinides.The photoemission data for {delta}-Pu, PuIn{sub 3} and PuCoGa{sub 5} are compared against model calculations. The calculations are a mixed level model (MLM) which is a multi-electron extension of the generalized gradient approximation. Using the MLM, one obtains good agreement for the volume and total energy minimum with 4 of 5 Pu 5f electrons localized. The calculations also agree well with the PES spectra. Other computational schemes and interpretations are also reviewed.

  3. Studies of electron correlation in the photoionization process

    Energy Technology Data Exchange (ETDEWEB)

    Rosenberg, Richard Allen [Univ. of California, Berkeley, CA (United States)

    1979-03-01

    Electron correlation is a result of the interaction of two or more electrons confined in a region of space, and may conveniently be treated under the formalism of configuration interaction (CI). Photoionization provides a rather direct experimental method for studying configuration interaction. The types of CI involved in the photoionization process can be divided into three categories: initial state configuration interaction (ISCI), final ionic state configuration interaction (FISCI), and continuum state configuration interaction (CSCI). This thesis deals with experimental studies which reveal how the various types of CI may become manifested in photoionization. The experimental methods utilized in this work are photoelectron spectroscopy (PES), electron impact spectroscopy (EIS), and time-resolved fluorescence spectroscopy. The EIS was carried out following the discovery that the UV lamp on a Perkin-Elmer photoelectron spectrometer could be utilized as a source of low energy electrons. The time-resolved fluorescence work utilized both the tunability and the time structure of the radiation available at the Stanford Synchrotron Radiation Laboratory (SSRL). A commercial photoelectron spectrometer equipped with a conventional UV lamp (Hei, Nei) was employed for some of the PES studies, and a novel time-of-flight photoelectron spectrometer was developed for the PES work performed using synchrotron radiation. The PES of Ba, Sm, Eu, and Yb was studied using both Hei (22.22 eV) and Nei (16.85 eV) radiation. Satellite structure observed in these spectra using Nei (and for Yb, Hei also) radiation could be satisfactorily explained by ISCI alone. The Hei spectra of Sm, Eu, and, in particular, Ba showed dramatic changes in the satellite population which could only be explained by a new mechanism, autoionization, which is a special form of CSCI. The detailed nature of this mechanism was explored in Ba using synchrotron radiation. It was found that the autoionizing level decays

  4. Materials Meets Concepts in Molecule-Based Electronics

    KAUST Repository

    Ortmann, Frank

    2014-10-14

    In this contribution, molecular materials are highlighted as an important topic in the diverse field of condensed matter physics, with focus on their particular electronic and transport properties. A better understanding of their performance in various applications and devices demands for an extension of basic theoretical approaches to describe charge transport in molecular materials, including the accurate description of electron-phonon coupling. Starting with the simplest case of a molecular junction and moving on to larger aggregates of bulk organic semiconductors, charge-transport regimes from ballistic motion to incoherent hopping, which are frequently encountered in molecular systems under respective conditions, are discussed. Transport features of specific materials are described through ab initio material parameters whose determination is addressed. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.

  5. Electron Crystallography Novel Approaches for Structure Determination of Nanosized Materials

    CERN Document Server

    Weirich, Thomas E; Zou, Xiaodong

    2006-01-01

    During the last decade we have been witness to several exciting achievements in electron crystallography. This includes structural and charge density studies on organic molecules complicated inorganic and metallic materials in the amorphous, nano-, meso- and quasi-crystalline state and also development of new software, tailor-made for the special needs of electron crystallography. Moreover, these developments have been accompanied by a now available new generation of computer controlled electron microscopes equipped with high-coherent field-emission sources, cryo-specimen holders, ultra-fast CCD cameras, imaging plates, energy filters and even correctors for electron optical distortions. Thus, a fast and semi-automatic data acquisition from small sample areas, similar to what we today know from imaging plates diffraction systems in X-ray crystallography, can be envisioned for the very near future. This progress clearly shows that the contribution of electron crystallography is quite unique, as it enables to r...

  6. Advanced cluster methods for correlated-electron systems

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, Andre

    2015-04-27

    In this thesis, quantum cluster methods are used to calculate electronic properties of correlated-electron systems. A special focus lies in the determination of the ground state properties of a 3/4 filled triangular lattice within the one-band Hubbard model. At this filling, the electronic density of states exhibits a so-called van Hove singularity and the Fermi surface becomes perfectly nested, causing an instability towards a variety of spin-density-wave (SDW) and superconducting states. While chiral d+id-wave superconductivity has been proposed as the ground state in the weak coupling limit, the situation towards strong interactions is unclear. Additionally, quantum cluster methods are used here to investigate the interplay of Coulomb interactions and symmetry-breaking mechanisms within the nematic phase of iron-pnictide superconductors. The transition from a tetragonal to an orthorhombic phase is accompanied by a significant change in electronic properties, while long-range magnetic order is not established yet. The driving force of this transition may not only be phonons but also magnetic or orbital fluctuations. The signatures of these scenarios are studied with quantum cluster methods to identify the most important effects. Here, cluster perturbation theory (CPT) and its variational extention, the variational cluster approach (VCA) are used to treat the respective systems on a level beyond mean-field theory. Short-range correlations are incorporated numerically exactly by exact diagonalization (ED). In the VCA, long-range interactions are included by variational optimization of a fictitious symmetry-breaking field based on a self-energy functional approach. Due to limitations of ED, cluster sizes are limited to a small number of degrees of freedom. For the 3/4 filled triangular lattice, the VCA is performed for different cluster symmetries. A strong symmetry dependence and finite-size effects make a comparison of the results from different clusters difficult

  7. Strongly correlated f-electron systems: A PES study

    Energy Technology Data Exchange (ETDEWEB)

    Arko, A.J.; Joyce, J.J.; Sarrao, J.; Thompson, J.D.; Morales, L. [Los Alamos National Lab., NM (United States); Fisk, Z. [Florida State Univ., Tallahassee, FL (United States); Henkie, Z.; Cichorek, T. [Trzebiatowski Inst., Wroclaw (Poland)

    1998-12-31

    The term heavy fermions refers to materials (thus far only compounds with elements having an unfilled 4f or 5f shells) whose large specific heat {gamma}-values suggest that the conduction electrons at low temperatures have a very heavy effective mass. Magnetic susceptibility measurements, {chi}, generally yield a Curie-Weiss behavior at high temperatures with a well developed moment, which would be consistent with localized behavior of the f-electrons. Thus, the f-electrons appear to behave as non-interacting single impurities at elevated temperature. Below a characteristic Kondo temperature, T{sub K}, the susceptibility levels off or even decreases. This is interpreted as a compensation of the f-moment by the ligand conduction electrons that are believed to align anti-parallel to form a singlet state and has led to the widespread use of the Anderson Impurity Hamiltonian and the Single Impurity Model (SIM). Weak hybridization with these conduction electrons yields a narrow, highly temperature dependent, DOS at the Fermi energy, often referred to as the Kondo resonance (KR). At still lower temperatures it is generally agreed that in stoichiometric compounds a lattice of these singlet states finally results in extremely narrow bands at the Fermi energy, whose bandwidth is of the order k{sub B}T{sub K}. Clearly coherent bands cannot form above T{sub K} owing to the narrow width. A model for periodic Kondo systems will inevitably have to include the lattice. Preliminary PAM calculations indicate that this inclusion yields results differing qualitatively, rather than just quantitatively, from the SIM predictions. The photoemission data on single crystal heavy fermions are consistent with the following PAM predictions: (1) the temperature dependence of the KR is much slower than expected from the SIM; indeed, it is primarily7 due to broadening and Fermi function truncation; (2) the spectral weight of the KR relative to the localized 4f feature (not discussed here) is

  8. Correlation between Electrochemical Impedance Spectroscopy and Structural Properties of Amorphous Tunisian Metanacrite Synthetic Material

    Directory of Open Access Journals (Sweden)

    Nouha Jaafar

    2014-01-01

    Full Text Available In the present work, we report the structural and electrochemical properties of metanacrite. Metanacrite is a synthetic material originated by heating (550°C of a clay mineral (Tunisian nacrite belonging to the kaolin group. The structure of the amorphous synthetic product was corroborated by X-ray diffraction (disappearing of nacrite peaks and infrared spectroscopy (disappearing of Al–OH and water bands. The decomposition of the silicate framework was confirmed by transmission electron microscope (TEM. The obtained metanacrite synthetic material was also examined by electrochemical impedance spectroscopy (EIS. Accordingly, the electronic conduction is followed by the correlated barrier hopping (C.B.H. model. Therefore, by combining ac and dc electrical conductivity, a semiconductor behavior is evidenced. The dependence of the dielectric constant (ε′ and dielectric loss (ε″ on both temperature and frequency is also discussed.

  9. Electron fluence correction factors for various materials in clinical electron beams.

    Science.gov (United States)

    Olivares, M; DeBlois, F; Podgorsak, E B; Seuntjens, J P

    2001-08-01

    Relative to solid water, electron fluence correction factors at the depth of dose maximum in bone, lung, aluminum, and copper for nominal electron beam energies of 9 MeV and 15 MeV of the Clinac 18 accelerator have been determined experimentally and by Monte Carlo calculation. Thermoluminescent dosimeters were used to measure depth doses in these materials. The measured relative dose at dmax in the various materials versus that of solid water, when irradiated with the same number of monitor units, has been used to calculate the ratio of electron fluence for the various materials to that of solid water. The beams of the Clinac 18 were fully characterized using the EGS4/BEAM system. EGSnrc with the relativistic spin option turned on was used to optimize the primary electron energy at the exit window, and to calculate depth doses in the five phantom materials using the optimized phase-space data. Normalizing all depth doses to the dose maximum in solid water stopping power ratio corrected, measured depth doses and calculated depth doses differ by less than +/- 1% at the depth of dose maximum and by less than 4% elsewhere. Monte Carlo calculated ratios of doses in each material to dose in LiF were used to convert the TLD measurements at the dose maximum into dose at the center of the TLD in the phantom material. Fluence perturbation correction factors for a LiF TLD at the depth of dose maximum deduced from these calculations amount to less than 1% for 0.15 mm thick TLDs in low Z materials and are between 1% and 3% for TLDs in Al and Cu phantoms. Electron fluence ratios of the studied materials relative to solid water vary between 0.83+/-0.01 and 1.55+/-0.02 for materials varying in density from 0.27 g/cm3 (lung) to 8.96 g/cm3 (Cu). The difference in electron fluence ratios derived from measurements and calculations ranges from -1.6% to +0.2% at 9 MeV and from -1.9% to +0.2% at 15 MeV and is not significant at the 1sigma level. Excluding the data for Cu, electron

  10. Recent progress of probing correlated electron states by point contact spectroscopy

    Science.gov (United States)

    Lee, Wei-Cheng; Greene, Laura H.

    2016-09-01

    We review recent progress in point contact spectroscopy (PCS) to extract spectroscopic information out of correlated electron materials, with the emphasis on non-superconducting states. PCS has been used to detect bosonic excitations in normal metals, where signatures (e.g. phonons) are usually less than 1% of the measured conductance. In the superconducting state, point contact Andreev reflection (PCAR) has been widely used to study properties of the superconducting gap in various superconductors. It has been well-recognized that the corresponding conductance can be accurately fitted by the Blonder-Tinkham-Klapwijk (BTK) theory in which the AR occurring near the point contact junction is modeled by three parameters; the superconducting gap, the quasiparticle scattering rate, and a dimensionless parameter, Z, describing the strength of the potential barrier at the junction. AR can be as large as 100% of the background conductance, and only arises in the case of superconductors. In the last decade, there have been more and more experimental results suggesting that the point contact conductance could reveal new features associated with the unusual single electron dynamics in non-superconducting states, shedding a new light on exploring the nature of the competing phases in correlated materials. To correctly interpret these new features, it is crucial to re-examine the modeling of the point contact junctions, the formalism used to describe the single electron dynamics particularly in point contact spectroscopy, and the physical quantity that should be computed to understand the conductance. We will summarize the theories for point contact spectroscopy developed from different approaches and highlight these conceptual differences distinguishing point contact spectroscopy from tunneling-based probes. Moreover, we will show how the Schwinger-Kadanoff-Baym-Keldysh (SKBK) formalism together with the appropriate modeling of the nano-scale point contacts randomly distributed

  11. Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2

    Science.gov (United States)

    Frenzel, A.; Qazilbash, M. M.; Brehm, M.; Chae, Byung-Gyu; Kim, Bong-Jun; Kim, Hyun-Tak; Balatsky, A. V.; Keilmann, F.; Basov, D. N.

    2009-09-01

    We investigate the percolative insulator-to-metal transition (IMT) in films of the correlated material vanadium dioxide (VO2) . Scattering-type scanning near-field infrared microscopy and atomic force microscopy were used to explore the relationship between the nucleation of metallic regions and the topography in insulating VO2 . We demonstrate that the IMT begins within 10 nm from grain boundaries and crevices by using mean curvature and statistical analysis. We also observe coexistence of insulating and metallic domains in a single crystalline grain that points to intrinsic inhomogeneity in VO2 due to competing electronic phases in the IMT regime.

  12. Advanced electrical and electronics materials processes and applications

    CERN Document Server

    Gupta, K M

    2015-01-01

    This comprehensive and unique book is intended to cover the vast and fast-growing field of electrical and electronic materials and their engineering in accordance with modern developments.   Basic and pre-requisite information has been included for easy transition to more complex topics. Latest developments in various fields of materials and their sciences/engineering, processing and applications have been included. Latest topics like PLZT, vacuum as insulator, fiber-optics, high temperature superconductors, smart materials, ferromagnetic semiconductors etc. are covered. Illustrations and exa

  13. Non-contact temperature measurement requirements for electronic materials processing

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.

    1988-01-01

    The requirements for non-contact temperature measurement capabilities for electronic materials processing in space are assessed. Non-contact methods are probably incapable of sufficient accuracy for the actual absolute measurement of temperatures in most such applications but would be useful for imaging in some applications.

  14. Electron Charged Graphite-based Hydrogen Storage Material

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Chinbay Q. Fan; D Manager

    2012-03-14

    The electron-charge effects have been demonstrated to enhance hydrogen storage capacity using materials which have inherent hydrogen storage capacities. A charge control agent (CCA) or a charge transfer agent (CTA) was applied to the hydrogen storage material to reduce internal discharge between particles in a Sievert volumetric test device. GTI has tested the device under (1) electrostatic charge mode; (2) ultra-capacitor mode; and (3) metal-hydride mode. GTI has also analyzed the charge distribution on storage materials. The charge control agent and charge transfer agent are needed to prevent internal charge leaks so that the hydrogen atoms can stay on the storage material. GTI has analyzed the hydrogen fueling tank structure, which contains an air or liquid heat exchange framework. The cooling structure is needed for hydrogen fueling/releasing. We found that the cooling structure could be used as electron-charged electrodes, which will exhibit a very uniform charge distribution (because the cooling system needs to remove heat uniformly). Therefore, the electron-charge concept does not have any burden of cost and weight for the hydrogen storage tank system. The energy consumption for the electron-charge enhancement method is quite low or omitted for electrostatic mode and ultra-capacitor mode in comparison of other hydrogen storage methods; however, it could be high for the battery mode.

  15. Observation of Materials Processes in Liquids in the Electron Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chong M.; Liao, Honggang; Ross, Frances M.

    2015-01-01

    Materials synthesis and the functioning of devices often indispensably involve liquid media. But direct visualization of dynamic process in liquids, especially with high spatial and temporal resolution, has been challenging. For solid materials, advances in aberration corrected electron microscopy have made observation of atomic level features a routine practice. Here we discuss the extent to which one can take advantage of the resolution of modern electron microscopes to image phenomenon occuring in liquids. We will describe the fundamentals of two different experimental approaches, closed and open liquid cells. We will illustrate the capabilities of each approach by considering processes in batteries and nucleation and growth of nanoparticles from solution. We conclude that liquid cell electron microscopy appears to be duly fulfilling its role for in situ studies of nanoscale processes in liquids, revealing physical and chemical processes otherwise difficult to observe.

  16. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    Directory of Open Access Journals (Sweden)

    P. A. Bhobe

    2015-10-01

    Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

  17. The electron beam welding of dissimilar materials - case study

    Science.gov (United States)

    Munteanu, A.

    2016-11-01

    The modalities to realize the welding workpieces are multiple. The electron beam welding is one of them. One can weld two different types of materials that give the possibility to reduce the cost of workpiece, if the active part is realised of rich materials welded on components with inferior phisico-mecanical characteristics. The procedure provides great flexibility to the product designs through efficient use of each type of material. So this aspects lead to the necessity to join dissimilar metals. Different tables are given in the specific literature regarding the possible combination. Conflicts may arise by the compromises required for to the optimum heat control of the two dissimilar materials used. But nowadays, more and more frequently are meet the welding of dissimilar metals, thus, the objective of this article is to provide information regarding the particular case of welding between stainless steel and copper without the filler material use.

  18. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Science.gov (United States)

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

  19. New materials strategies for creating hybrid electronic circuitry (Presentation Video)

    Science.gov (United States)

    Marks, Tobin J.

    2013-09-01

    This lecture focuses on the challenging design and realization of new materials for creating unconventional electronic circuitry. Fabrication methodologies to achieve these goals include high-throughput, large-area printing techniques. Materials design topics to be discussed include: 1. Rationally designed high-mobility p- and n-type organic semiconductors for printed organic CMOS, 2. Polycrystalline and amorphous oxide semiconductors for transparent and mechanically flexible electronics, 3) Self-assembled and printable high-k nanodielectrics enabling ultra-large capacitance, low leakage, high breakdown fields, minimal trapped interfacial charge, and device radiation hardness. 4) Combining these materials sets to fabricate a variety of high-performance thin-film transistor-based devices.

  20. Research and Development of Electronic and Optoelectronic Materials in China

    Institute of Scientific and Technical Information of China (English)

    王占国

    2000-01-01

    A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state-of-the-arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals, especially nonlinear optical crystals and rare-earth permanent magnets materials, etc. , with a greater emphasis on Chinese scientist's contributions to the frontier area of nanomaterials and nanostructures in the past few years. A new concept of the trip chemistry proposed by Dr. Liu Zhongfan from Peking University has also been described. Finally the possible research grants and the national policy to support the scientific research have been discussed.

  1. Tensor correlations in nuclei and exlusive electron scattering

    CERN Document Server

    Ryckebusch, J; Van Nespen, W; Debruyne, D

    2000-01-01

    The effect of tensor nucleon-nucleon correlations upon exclusive and semi-exclusive electronuclear reactions is studied. Differential cross sections for the semi-exclusive ^{16}O(e,e'p) and exclusive ^{16}O(e,e'pn) processes are computed by explicitly evaluating the dynamical electromagnetic coupling to a tensor correlated nucleon pair. In both reaction channels the tensor correlations contribute in a very substantial way. Tensor correlations are found to generate more electronuclear strength than central Jastrow correlations do.

  2. Dynamic Characterization and Modeling of Potting Materials for Electronics Assemblies

    Science.gov (United States)

    Joshi, Vasant; Lee, Gilbert; Santiago, Jaime

    2015-06-01

    Prediction of survivability of encapsulated electronic components subject to impact relies on accurate modeling. Both static and dynamic characterization of encapsulation material is needed to generate a robust material model. Current focus is on potting materials to mitigate high rate loading on impact. In this effort, encapsulation scheme consists of layers of polymeric material Sylgard 184 and Triggerbond Epoxy-20-3001. Experiments conducted for characterization of materials include conventional tension and compression tests, Hopkinson bar, dynamic material analyzer (DMA) and a non-conventional accelerometer based resonance tests for obtaining high frequency data. For an ideal material, data can be fitted to Williams-Landel-Ferry (WLF) model. A new temperature-time shift (TTS) macro was written to compare idealized temperature shift factor (WLF model) with experimental incremental shift factors. Deviations can be observed by comparison of experimental data with the model fit to determine the actual material behavior. Similarly, another macro written for obtaining Ogden model parameter from Hopkinson Bar tests indicates deviations from experimental high strain rate data. In this paper, experimental results for different materials used for mitigating impact, and ways to combine data from resonance, DMA and Hopkinson bar together with modeling refinements will be presented.

  3. 3D correlative light and electron microscopy of cultured cells using serial blockface scanning electron microscopy

    Science.gov (United States)

    Lerner, Thomas R.; Burden, Jemima J.; Nkwe, David O.; Pelchen-Matthews, Annegret; Domart, Marie-Charlotte; Durgan, Joanne; Weston, Anne; Jones, Martin L.; Peddie, Christopher J.; Carzaniga, Raffaella; Florey, Oliver; Marsh, Mark; Gutierrez, Maximiliano G.

    2017-01-01

    ABSTRACT The processes of life take place in multiple dimensions, but imaging these processes in even three dimensions is challenging. Here, we describe a workflow for 3D correlative light and electron microscopy (CLEM) of cell monolayers using fluorescence microscopy to identify and follow biological events, combined with serial blockface scanning electron microscopy to analyse the underlying ultrastructure. The workflow encompasses all steps from cell culture to sample processing, imaging strategy, and 3D image processing and analysis. We demonstrate successful application of the workflow to three studies, each aiming to better understand complex and dynamic biological processes, including bacterial and viral infections of cultured cells and formation of entotic cell-in-cell structures commonly observed in tumours. Our workflow revealed new insight into the replicative niche of Mycobacterium tuberculosis in primary human lymphatic endothelial cells, HIV-1 in human monocyte-derived macrophages, and the composition of the entotic vacuole. The broad application of this 3D CLEM technique will make it a useful addition to the correlative imaging toolbox for biomedical research. PMID:27445312

  4. 3D correlative light and electron microscopy of cultured cells using serial blockface scanning electron microscopy.

    Science.gov (United States)

    Russell, Matthew R G; Lerner, Thomas R; Burden, Jemima J; Nkwe, David O; Pelchen-Matthews, Annegret; Domart, Marie-Charlotte; Durgan, Joanne; Weston, Anne; Jones, Martin L; Peddie, Christopher J; Carzaniga, Raffaella; Florey, Oliver; Marsh, Mark; Gutierrez, Maximiliano G; Collinson, Lucy M

    2017-01-01

    The processes of life take place in multiple dimensions, but imaging these processes in even three dimensions is challenging. Here, we describe a workflow for 3D correlative light and electron microscopy (CLEM) of cell monolayers using fluorescence microscopy to identify and follow biological events, combined with serial blockface scanning electron microscopy to analyse the underlying ultrastructure. The workflow encompasses all steps from cell culture to sample processing, imaging strategy, and 3D image processing and analysis. We demonstrate successful application of the workflow to three studies, each aiming to better understand complex and dynamic biological processes, including bacterial and viral infections of cultured cells and formation of entotic cell-in-cell structures commonly observed in tumours. Our workflow revealed new insight into the replicative niche of Mycobacterium tuberculosis in primary human lymphatic endothelial cells, HIV-1 in human monocyte-derived macrophages, and the composition of the entotic vacuole. The broad application of this 3D CLEM technique will make it a useful addition to the correlative imaging toolbox for biomedical research. © 2017. Published by The Company of Biologists Ltd.

  5. A 360-deg Digital Image Correlation system for materials testing

    Science.gov (United States)

    Genovese, K.; Cortese, L.; Rossi, M.; Amodio, D.

    2016-07-01

    The increasing research interest toward natural and advanced engineered materials demands new experimental protocols capable of retrieving highly dense sets of experimental data on the full-surface of samples under multiple loading conditions. Such information, in fact, would allow to capture the possible heterogeneity and anisotropy of the material by using up-to-date inverse characterization methods. Although the development of object-specific test protocols could represent the optimal choice to address this need, it is unquestionable that universal testing machines (UTM) remain the most widespread and versatile option to test materials and components in both academic and industrial contexts. A major limitation of performing standard material tests with UTM, however, consists in the scarce information obtainable with the commonly associated sensors since they provide only global (LVDTs, extensometers, 2D-video analyzers) or local (strain gages) measures of displacement and strain. This paper presents a 3D Digital Image Correlation (DIC) system developed to perform highly accurate full-surface 360-deg measurements on either standard or custom-shaped samples under complex loading within universal testing machines. To this aim, a low cost and easy to setup video rig was specifically designed to overcome the practical limitations entailed with the integration of a multi-camera system within an already existing loading frame. In particular, the proposed system features a single SLR digital camera moved through multiple positions around the specimen by means of a large rotation stage. A proper calibration and data-processing procedure allows to automatically merge the experimental data obtained from the multiple views with an accuracy of 10-2 m m . The results of a full benchmarking of the metrological performances of the system are here reported and discussed together with illustrative examples of full-360-deg shape and deformation measurements on a Grade X65 steel

  6. Correlated electron state in CeCu2Si2 controlled through Si to P substitution

    Science.gov (United States)

    Lai, Y.; Saunders, S. M.; Graf, D.; Gallagher, A.; Chen, K.-W.; Kametani, F.; Besara, T.; Siegrist, T.; Shekhter, A.; Baumbach, R. E.

    2017-08-01

    CeCu2Si2 is an exemplary correlated electron metal that features two domes of unconventional superconductivity in its temperature-pressure phase diagram. The first dome surrounds an antiferromagnetic quantum critical point, whereas the more exotic second dome may span the termination point of a line of f -electron valence transitions. This behavior has received intense interest, but what has been missing are ways to access the high pressure behavior under milder conditions. Here we study Si → P chemical substitution, which compresses the unit cell volume but simultaneously weakens the hybridization between the f - and conduction electron states and encourages complex magnetism. At concentrations that show magnetism, applied pressure suppresses the magnetic ordering temperature and superconductivity is recovered for samples with low disorder. These results reveal that the electronic behavior in this system is controlled by a nontrivial combination of effects from unit cell volume and electronic shell filling. Guided by this topography, we discuss prospects for uncovering a valence fluctuation quantum phase transition in the broader family of Ce-based ThCr2Si2 -type materials through chemical substitution.

  7. In situ transmission electron microscopy experimentation of nanostructured materials

    Science.gov (United States)

    Alducin, Diego

    Due to the remarkable mechanical and electrical properties some nanostructured materials possess, it is important to be able to quantitatively characterize how these materials react under different types of stimulus. In situ transmission electron microscopy is a unique technique that allows the user to fully observe and record the crystallographic behavior of such materials undergoing a variety of tests. The crystallographic orientations silver nanowires were mapped in order to understand the structure and facets due to its geometry. Measuring the toughness and yield of the material led us to understand the anisotropic behavior of AgNWs. Depending on whether a load is applied to either a boundary between facets or on a facet will change the mechanical strength of the nanowire. By measuring the resistivity of the this material during deformation has also led us to understand that the intrinsic defects in the crystal structure of nanowires will change the way the material reacts to an electric potential. We have been also able to completely map the crystallographic orientations of very complex geometries of gold nanoparticles and characterize the weak forces involved in the manipulation if these nanoparticles. Finally, the elasticity of MoS2 was tested and found to be exponentially dependent upon the thickness of the nanosheets. However, the resistivity of this material does not seem to be affected by any type of deformation it is subjected to. The complete categorization of how materials interact with external stimulus while comparing the changes observed in its crystal structure is essential to understanding the underlying properties of nanostructured materials, which would not be possible without in situ transmisison electron microscopy experimentation.

  8. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-01-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

  9. Materials and processing approaches for foundry-compatible transient electronics

    Science.gov (United States)

    Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

    2017-07-01

    Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

  10. Correlation function and electronic spectral line broadening in relativistic plasmas

    Directory of Open Access Journals (Sweden)

    Douis S.

    2013-01-01

    Full Text Available The electrons dynamics and the time autocorrelation function Cee(t for the total electric microfield of the electrons on positive charge impurity embedded in a plasma are considered when the relativistic dynamic of the electrons is taken into account. We have, at first, built the effective potential governing the electrons dynamics. This potential obeys a nonlinear integral equation that we have solved numerically. Regarding the electron broadening of the line in plasma, we have found that when the plasma parameters change, the amplitude of the collision operator changes in the same way as the time integral of Cee(t. The electron-impurity interaction is taken at first time as screened Deutsh interaction and at the second time as Kelbg interaction. Comparisons of all interesting quantities are made with respect to the previous interactions as well as between classical and relativistic dynamics of electrons.

  11. Materials Research with the Vanderbilt Free-Electron Laser

    Science.gov (United States)

    Tolk, Norman

    1997-11-01

    The Vanderbilt Free-Electron Laser's (FEL) tunability (2-10=B5m), high intensity (15 MW) and short pulse structure (1 ps) make it ideal for studying (a) the electronic and vibrational structure of small and wide band gap semiconductors, and (b) non-thermal wavelength-selective materials alteration (``Free-Electron Laser Wavelength-Selective Materials Alteration and Photoexcitation Spectroscopy,'' N.H. Tolk, R.G. Albridge, A.V. Barnes, B.M. Barnes, J.L. Davidson, V.D. Gordon, G. Margaritondo, J.T. McKinley, G.A. Mensing, and J. Sturmann, Appl. Surf. Sci. 106, 205-210 (1996).). Two-photon absorption measurements in Ge were the first verification of a two-decades old predictionby Bassani and Hassan that the indirect two-photon absorption in Ge would be an LO-phonon assisted process. The FEL has greatly facilitated internal photoemission (IPE) heterojunction band discontinuity measurements. This technique is a photocurrent excitation spectroscopy that provides a direct measurement of the discontinuity without resorting to complex modeling. Another important area of materials research at the FEL concerns identification of wavelength-selective mechanisms for materials alteration. We have used the FEL to demonstrate strongly wavelength-selective ablation near the C-H stretch vibrational mode in chemical vapor deposited (CVD) diamond.

  12. High-resolution electron microscopy of advanced materials

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, T.E.; Kung, H.H.; Sickafus, K.E.; Gray, G.T. III; Field, R.D.; Smith, J.F. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

    1997-11-01

    This final report chronicles a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The High-Resolution Electron Microscopy Facility has doubled in size and tripled in quality since the beginning of the three-year period. The facility now includes a field-emission scanning electron microscope, a 100 kV field-emission scanning transmission electron microscope (FE-STEM), a 300 kV field-emission high-resolution transmission electron microscope (FE-HRTEM), and a 300 kV analytical transmission electron microscope. A new orientation imaging microscope is being installed. X-ray energy dispersive spectrometers for chemical analysis are available on all four microscopes; parallel electron energy loss spectrometers are operational on the FE-STEM and FE-HRTEM. These systems enable evaluation of local atomic bonding, as well as chemical composition in nanometer-scale regions. The FE-HRTEM has a point-to-point resolution of 1.6 {angstrom}, but the resolution can be pushed to its information limit of 1 {angstrom} by computer reconstruction of a focal series of images. HRTEM has been used to image the atomic structure of defects such as dislocations, grain boundaries, and interfaces in a variety of materials from superconductors and ferroelectrics to structural ceramics and intermetallics.

  13. In situ and operando transmission electron microscopy of catalytic materials

    DEFF Research Database (Denmark)

    Crozier, Peter A.; Hansen, Thomas Willum

    2015-01-01

    Catalytic nanomaterials play a major role in chemical conversions and energy transformations. Understanding how materials control and regulate surface reactions is a major objective for fundamental research on heterogeneous catalysts. In situ environmental transmission electron microscopy (ETEM......) is a powerful technique for revealing the atomic structures of materials at elevated temperatures in the presence of reactive gases. This approach can allow the structure-reactivity relations underlying catalyst functionality to be investigated. Thus far, ETEM has been limited by the absence of in situ...

  14. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

    Science.gov (United States)

    Heine, Thomas

    2015-01-20

    CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the

  15. Electron localizability indicators ELI and ELIA: the case of highly correlated wavefunctions for the argon atom.

    Science.gov (United States)

    Bezugly, Viktor; Wielgus, Pawel; Wagner, Frank R; Kohout, Miroslav; Grin, Yuri

    2008-06-01

    Electron localizability indicators based on the same-spin electron pair density and the opposite-spin electron pair density are studied for correlated wavefunctions of the argon atom. Different basis sets and reference spaces are used for the multireference configuration interaction method following the complete active space calculations aiming at the understanding of the effect of local electron correlation when approaching the exact wavefunction. The populations of the three atomic shells of Ar atom in real space are calculated for each case.

  16. Quantum Monte Carlo study of the itinerant-localized model of strongly correlated electrons: Spin-spin correlation functions

    OpenAIRE

    Ivantsov, Ilya; Ferraz, Alvaro; Kochetov, Evgenii

    2016-01-01

    We perform quantum Monte Carlo simulations of the itinerant-localized periodic Kondo-Heisenberg model for the underdoped cuprates to calculate the associated spin correlation functions. The strong electron correlations are shown to play a key role in the abrupt destruction of the quasi long-range antiferromagnetic order in the lightly doped regime.

  17. Quantum Monte Carlo study of the itinerant-localized model of strongly correlated electrons: Spin-spin correlation functions

    Science.gov (United States)

    Ivantsov, Ilya; Ferraz, Alvaro; Kochetov, Evgenii

    2016-12-01

    We perform quantum Monte Carlo simulations of the itinerant-localized periodic Kondo-Heisenberg model for the underdoped cuprates to calculate the associated spin correlation functions. The strong electron correlations are shown to play a key role in the abrupt destruction of the quasi-long-range antiferromagnetic order in the lightly doped regime.

  18. Performance of Dynamically Simulated Reference Patterns for Cross-Correlation Electron Backscatter Diffraction.

    Science.gov (United States)

    Jackson, Brian E; Christensen, Jordan J; Singh, Saransh; De Graef, Marc; Fullwood, David T; Homer, Eric R; Wagoner, Robert H

    2016-08-01

    High-resolution (or "cross-correlation") electron backscatter diffraction analysis (HR-EBSD) utilizes cross-correlation techniques to determine relative orientation and distortion of an experimental electron backscatter diffraction pattern with respect to a reference pattern. The integrity of absolute strain and tetragonality measurements of a standard Si/SiGe material have previously been analyzed using reference patterns produced by kinematical simulation. Although the results were promising, the noise levels were significantly higher for kinematically produced patterns, compared with real patterns taken from the Si region of the sample. This paper applies HR-EBSD techniques to analyze lattice distortion in an Si/SiGe sample, using recently developed dynamically simulated patterns. The results are compared with those from experimental and kinematically simulated patterns. Dynamical patterns provide significantly more precision than kinematical patterns. Dynamical patterns also provide better estimates of tetragonality at low levels of distortion relative to the reference pattern; kinematical patterns can perform better at large values of relative tetragonality due to the ability to rapidly generate patterns relating to a distorted lattice. A library of dynamically generated patterns with different lattice parameters might be used to achieve a similar advantage. The convergence of the cross-correlation approach is also assessed for the different reference pattern types.

  19. Radiation Damage Studies with Hadrons on Materials and Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J

    2004-07-01

    Many materials and electronics need to be tested for the radiation environment expected at linear colliders (LC) where the accelerator and detectors will be subjected to large fluences of hadrons, leptons and {gamma}'s over their life[1]. Examples are NdFeB magnets considered for the damping rings and final focus, electronic and electro-optical devices to be utilized in detector readout and accelerator controls and CCDs required for the vertex detector. Effects of {gamma}'s on many materials have been presented[2] and our understanding of the situation for rare earth permanent magnets at PAC2003[3]. Here we give first measurements of the fast neutron, stepped doses at the UC Davis McClellan Nuclear Reactor Center (UCD MNRC) together with the induced radioactivities. Damage appears to be proportional to the distances between the operating point and H{sub ci}.

  20. Some applications of microanalytical electron microscopy in materials research

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, G.

    1985-10-01

    Electron microscopy has made extraordinary progress over the past 30 years and has become an indispensible tool for research in materials science. In this paper a review is given of some applications of microdiffraction and microanalysis in our current materials science research projects at the University of California, Berkeley. The topics discussed include: (1) The problem of solute atom partitioning in steels; this includes the difficulties of measuring carbon contents and methods of utilizing diffraction, lattice imaging, energy dispersive x-ray (EDXS) and electron energy loss (EELS) spectroscopies and atom probe analysis will be illustrated. (2) Utilization of CBED and EDXS techniques in zirconia ceramics research. (3) Applications of CBED to the study of el-Fe2O3 particles used in magnetic recording systems. (4) Applications of CBED and EDXS to rare earth permanent magnets. (5) Channelling enhanced microanalysis. 50 refs., 21 figs.

  1. Electron correlation and relativity of the 5f electrons in the U-Zr alloy system

    Science.gov (United States)

    Söderlind, P.; Sadigh, B.; Lordi, V.; Landa, A.; Turchi, P. E. A.

    2014-01-01

    We address a recently communicated conception that spin-orbit interaction and strong electron correlations are important for the metal fuel U-Zr system. Here, we show that (i) relativistic effects only marginally correct the uranium metal equation-of-state and (ii) addition of onsite Coulomb repulsion leads to an unphysical magnetic ground state of the body-centered cubic (γ) phase and a grossly overestimated equilibrium volume. Consequently, LSDA + U is deemed unsuitable for describing the electronic structure of the U-Zr system. Recently, Xiong et al. [1] reported on thermodynamic modeling of the U-Zr system motivated by its potential as a nuclear fuel for fast breeder reactors. This work [1] came on the heels of another report by Landa et al. [2] on the same system, but with very different results for the formation enthalpies and ultimate conclusion on the U-Zr phase diagram. The authors [1] argue that their calculated energetics are significantly more accurate than that by Landa et al. [2], and they further attribute the difference to strong electron correlations and the relativistic spin-orbit interaction.In the present letter we show that uranium metal, and thus the U-Zr metal nuclear fuel system, possess weakly correlated electrons that are adequately described within density-functional theory in the generalized gradient approximation, and that addition of onsite Coulomb repulsion using the LSDA + U formalism leads to finite magnetization of the γ phase in contradiction to experiments. Furthermore, we show that spin-orbit interaction is quite weak in uranium metal and that its inclusion will not significantly change the chemical bonding and formation enthalpies.In order to illustrate our arguments, we perform comparative electronic-structure calculations using the full-potential linear augmented plane-wave (FPLAPW) method and the projector augmented plane-wave (PAW) method as implemented in the Wien2K [3] and VASP [4] codes. The Wien2K computations are set

  2. Electron Acceptor Materials Engineering in Colloidal Quantum Dot Solar Cells

    KAUST Repository

    Liu, Huan

    2011-07-15

    Lead sulfide colloidal quantum dot (CQD) solar cells with a solar power conversion efficiency of 5.6% are reported. The result is achieved through careful optimization of the titanium dioxide electrode that serves as the electron acceptor. Metal-ion-doped sol-gel-derived titanium dioxide electrodes produce a tunable-bandedge, well-passivated materials platform for CQD solar cell optimization. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Electronic State Decomposition of Energetic Materials and Model Systems

    Science.gov (United States)

    2010-11-17

    tetrazine1,4-dioxde ( DATO ), is investigated. Although these molecules are based on N -oxides of a tetrazine aromatic heterocyclic ring, their...nitramines, furazan, tetrazines, tetrazine-N oxides, terazoles, PETN, RDX,HMX,CL-20,DAATO,ACTO, DATO ,conical intersections Elliot R Bernstein Colorado State...Tetrazine-N-Oxide Based High Nitrogen Content Energetic Materials from Excited Electronic States," J. Chem. Phys. 131, 194304 (2009). A

  4. Nanocellulose as Material Building Block for Energy and Flexible Electronics

    Science.gov (United States)

    Hu, Liangbing

    2014-03-01

    In this talk, I will discuss the fabrications, properties and device applications of functional nanostructured paper based on nanocellulose. Nanostructures with tunable optical, electrical, ionic and mechanical properties will be discussed. Lab-scale demonstration devices, including low-cost Na-ion batteries, microbial fuel cells, solar cells, transparent transistors, actuators and touch screens will be briefly mentioned. These studies show that nanocellulose is a promising green material for electronics and energy devices.

  5. Flexible Organic Electronics in Biology: Materials and Devices.

    Science.gov (United States)

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-09

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area.

  6. Poly(3-hexylthiophene) nanostructured materials for organic electronics applications.

    Science.gov (United States)

    Bhatt, M P; Magurudeniya, H D; Rainbolt, E A; Huang, P; Dissanayake, D S; Biewer, M C; Stefan, M C

    2014-02-01

    Semiconducting polymers have been developed during the last few decades and are currently used in various organic electronics applications. Regioregular poly(3-hexylthiophene) (P3HT) is the most employed semiconducting polymer for organic electronics applications. The development of living Grignard metathesis polymerization (GRIM) allowed the synthesis of P3HT with well-defined molecular weights and functional end groups. A large number of block copolymers containing P3HT have been reported, and their opto-electronic properties have been investigated. The performance of P3HT homopolymer and block copolymers in field-effect transistors and bulk heterojunction solar cells are discussed in this review. The morphology of the P3HT materials is also discussed.

  7. Multifunctional, flexible electronic systems based on engineered nanostructured materials.

    Science.gov (United States)

    Ko, Hyunhyub; Kapadia, Rehan; Takei, Kuniharu; Takahashi, Toshitake; Zhang, Xiaobo; Javey, Ali

    2012-08-31

    The development of flexible electronic systems has been extensively researched in recent years, with the goal of expanding the potential scope and market of modern electronic devices in the areas of computation, communications, displays, sensing and energy. Uniquely, the use of soft polymeric substrates enables the incorporation of advanced features beyond mechanical bendability and stretchability. In this paper, we describe several functionalities which can be achieved using engineered nanostructured materials. In particular, reversible binding, self-cleaning, antireflective and shape-reconfigurable properties are introduced for the realization of multifunctional, flexible electronic devices. Examples of flexible systems capable of spatial mapping and/or responding to external stimuli are also presented as a new class of user-interactive devices.

  8. Reversible Hydrogen Storage Materials – Structure, Chemistry, and Electronic Structure

    Energy Technology Data Exchange (ETDEWEB)

    Robertson, Ian M. [University of Wisconsin-Madison; Johnson, Duane D. [Ames Lab., Iowa

    2014-06-21

    To understand the processes involved in the uptake and release of hydrogen from candidate light-weight metal hydride storage systems, a combination of materials characterization techniques and first principle calculation methods have been employed. In addition to conventional microstructural characterization in the transmission electron microscope, which provides projected information about the through thickness microstructure, electron tomography methods were employed to determine the three-dimensional spatial distribution of catalyst species for select systems both before and after dehydrogenation. Catalyst species identification as well as compositional analysis of the storage material before and after hydrogen charging and discharging was performed using a combination of energy dispersive spectroscopy, EDS, and electron energy loss spectroscopy, EELS. The characterization effort was coupled with first-principles, electronic-structure and thermodynamic techniques to predict and assess meta-stable and stable phases, reaction pathways, and thermodynamic and kinetic barriers. Systems studied included:NaAlH4, CaH2/CaB6 and Ca(BH4)2, MgH2/MgB2, Ni-Catalyzed Magnesium Hydride, TiH2-Catalyzed Magnesium Hydride, LiBH4, Aluminum-based systems and Aluminum

  9. Correlation of angular and lateral distributions of electrons in extensive air showers

    Science.gov (United States)

    Giller, Maria; Śmiałkowski, Andrzej; Legumina, Remigiusz

    2016-08-01

    The aim of this paper is to explain the weak correlation of the angular and lateral deflections of electrons in extensive air showers in the primary energy range 1016-1019 eV, when compared with that in some models of electron propagation. We derive analytical formulae for the correlation coefficient in the multiple scattering model with energy losses and show a strong role of the ionisation in diminishing the correlation. By considering a Heitler-like model of an electromagnetic cascade we show also that the presence of photons, parent to electrons, causes a decrease of the correlation, roughly explaining quantitatively the small correlation in air showers.

  10. Validation of the shear punch-tensile correlation technique using irradiated materials

    Energy Technology Data Exchange (ETDEWEB)

    Hankin, G.L.; Faulkner, R.G. [Loughborough Univ., Leicestershire (United Kingdom); Toloczko, M.B. [Washington State Univ., WA (United States); Hamilton, M.L. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    It was recently demonstrated that tensile data could be successfully related to shear punch data obtained on transmission electron microscopy (TEM) discs for a variety of irradiated alloys exhibiting yield strengths that ranged from 100 to 800 MPa. This implies that the shear punch test might be a viable alternative for obtaining tensile properties using a TEM disk, which is much smaller than even the smallest miniature tensile specimens, especially when irradiated specimens are not available or when they are too radioactive to handle easily. The majority of the earlier tensile-shear punch correlation work was done using a wide variety of unirradiated materials. The current work extends this correlation effort to irradiated materials and demonstrates that the same relationships that related shear punch tests remain valid for irradiated materials. Shear punch tests were performed on two sets of specimens. In the first group, three simple alloys from the {sup 59}Ni isotopic doping series in the solution annealed and cold worked conditions were irradiated at temperatures ranging from 365 to 495 C in the Fast Flux Test Facility. The corresponding tensile data already existed for tensile specimens fabricated from the same raw materials and irradiated side-by-side with the disks. In the second group, three variants of 316 stainless steel were irradiated in FFTF at 5 temperatures between 400 and 730 C to doses ranging from 12.5 to 88 dpa. The specimens were in the form of both TEM and miniature tensile specimens and were irradiated side-by-side.

  11. Conjugated Polymer Zwitterions: Efficient Interlayer Materials in Organic Electronics.

    Science.gov (United States)

    Liu, Yao; Duzhko, Volodimyr V; Page, Zachariah A; Emrick, Todd; Russell, Thomas P

    2016-11-15

    Conjugated polymer zwitterions (CPZs) are neutral, hydrophilic, polymer semiconductors. The pendent zwitterions, viewed as side chain dipoles, impart solubility in polar solvents for solution processing, and open opportunities as interfacial components of optoelectronic devices, for example, between metal electrodes and organic semiconductor active layers. Such interlayers are crucial for defining the performance of organic electronic devices, e.g., field-effect transistors (OFETs), light-emitting diodes (OLEDs), and photovoltaics (OPVs), all of which consist of multilayer structures. The interlayers reduce the Schottky barrier height and thus improve charge injection in OFETs and OLEDs. In OPVs, the interlayers serve to increase the built-in electric potential difference (Vbi) across the active layer, ensuring efficient extraction of photogenerated charge carriers. In general, polar and even charged electronically active polymers have gained recognition for their ability to modify metal/semiconductor interfaces to the benefit of organic electronics. While conjugated polyelectrolytes (CPEs) as interlayer materials are well-documented, open questions remain about the role of mobile counterions in CPE-containing devices. CPZs possess the processing advantages of CPEs, but as neutral molecules lack any potential complications associated with counterions. The electronic implications of CPZs on metal electrodes stem from the orientation of the zwitterion dipole moment in close proximity to the metal surface, and the resultant surface-induced polarization. This generates an interfacial dipole (Δ) at the CPZ/metal interface, altering the work function of the electrode, as confirmed by ultraviolet photoelectron spectroscopy (UPS), and improving device performance. An ideal cathode interlayer would reduce electrode work function, have orthogonal processability to the active layer, exhibit good film forming properties (i.e., wettability/uniformity), prevent exciton

  12. Velocity dispersion of correlated energy spread electron beams in the free electron laser

    Science.gov (United States)

    Campbell, L. T.; Maier, A. R.

    2017-03-01

    The effects of a correlated linear energy/velocity chirp in the electron beam in the free electron laser (FEL), and how to compensate for its effects by using an appropriate taper (or reverse-taper) of the undulator magnetic field, is well known. The theory, as described thus far, ignores velocity dispersion from the chirp in the undulator, taking the limit of a ‘small’ chirp. In the following, the physics of compensating for chirp in the beam is revisited, including the effects of velocity dispersion, or beam compression or decompression, in the undulator. It is found that the limit of negligible velocity dispersion in the undulator is different from that previously identified as the small chirp limit, and is more significant than previously considered. The velocity dispersion requires a taper which is nonlinear to properly compensate for the effects of the detuning, and also results in a varying peak current (end thus a varying gain length) over the length of the undulator. The results may be especially significant for plasma driven FELs and low energy linac driven FEL test facilities.

  13. Correlation Between Domain Behavior and Magnetic Properties of Materials

    Energy Technology Data Exchange (ETDEWEB)

    Leib, Jeffrey Scott [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Correlation between length scales in the field of magnetism has long been a topic of intensive study. The long-term desire is simple: to determine one theory that completely describes the magnetic behavior of matter from an individual atomic particle all the way up to large masses of material. One key piece to this puzzle is connecting the behavior of a material's domains on the nanometer scale with the magnetic properties of an entire large sample or device on the centimeter scale. In the first case study involving the FeSiAl thin films, contrast and spacing of domain patterns are clearly related to microstructure and stress. Case study 2 most clearly demonstrates localized, incoherent domain wall motion switching with field applied along an easy axis for a square hysteresis loop. In case study 3, axis-specific images of the complex Gd-Si-Ge material clearly show the influence of uniaxial anisotropy. Case study 4, the only study with the sole intent of creating domain structures for imaging, also demonstrated in fairly simple terms the effects of increasing stress on domain patterns. In case study 5, it was proven that the width of magnetoresistance loops could be quantitatively predicted using only MFM. When all of the case studies are considered together, a dominating factor seems to be that of anisotropy, both magneticrostaylline and stress induced. Any quantitative bulk measurements heavily reliant on K coefficients, such as the saturation fields for the FeSiAl films, Hc in cases 1, 3, and 5, and the uniaxial character of the Gd5(Si2Ge2), transferred to and from the domain scale quite well. In-situ measurements of domain rotation and switching, could also be strongly correlated with bulk magnetic properties, including coercivity, Ms, and hysteresis loop shape. In most cases, the qualitative nature of the domain structures, when properly considered, matched quite well to what might have been expected

  14. Correlation Between Domain Behavior and Magnetic Properties of Materials

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey Scott Leib

    2003-05-31

    Correlation between length scales in the field of magnetism has long been a topic of intensive study. The long-term desire is simple: to determine one theory that completely describes the magnetic behavior of matter from an individual atomic particle all the way up to large masses of material. One key piece to this puzzle is connecting the behavior of a material's domains on the nanometer scale with the magnetic properties of an entire large sample or device on the centimeter scale. In the first case study involving the FeSiAl thin films, contrast and spacing of domain patterns are clearly related to microstructure and stress. Case study 2 most clearly demonstrates localized, incoherent domain wall motion switching with field applied along an easy axis for a square hysteresis loop. In case study 3, axis-specific images of the complex Gd-Si-Ge material clearly show the influence of uniaxial anisotropy. Case study 4, the only study with the sole intent of creating domain structures for imaging, also demonstrated in fairly simple terms the effects of increasing stress on domain patterns. In case study 5, it was proven that the width of magnetoresistance loops could be quantitatively predicted using only MFM. When all of the case studies are considered together, a dominating factor seems to be that of anisotropy, both magneticrostaylline and stress induced. Any quantitative bulk measurements heavily reliant on K coefficients, such as the saturation fields for the FeSiAl films, H{sub c} in cases 1, 3, and 5, and the uniaxial character of the Gd{sub 5}(Si{sub 2}Ge{sub 2}), transferred to and from the domain scale quite well. In-situ measurements of domain rotation and switching, could also be strongly correlated with bulk magnetic properties, including coercivity, M{sub s}, and hysteresis loop shape. In most cases, the qualitative nature of the domain structures, when properly considered, matched quite well to what might have been expected from theory and

  15. Mapping of the photo-induced metastable and hidden phases in 2D electronic materials

    Science.gov (United States)

    Zhou, Faran; Sun, Tianyin; Han, Tzong-Ru; Malliakas, Christos; Duxbury, Phillip; Mahanti, Subhendra; Kanatzidis, Mercouri; Ruan, Chong-Yu; MSU Team; NU Team

    Using the ultrafast electron imaging techniques, we studied the light-induced phase transitions in transition-metal dichalcogenide materials. A succession of different phases was introduced transiently using femtosecond mid-infrared pulses and the local atomic scale charge-density-wave dynamics and morphological evolution of the long-range textured domains were in situ characterized using the ultrashort coherent electron pulses. The various metastable and hidden states emerging under the controlled nonthermal, nonadiabatic driving highlight the interaction-driven nature of these transitions with limited involvement of lattice entropy. The methodology introduced here can be generally applied to survey the complex energy landscape in strongly correlated electron systems, avoiding the difficulty of electrostatic gating or confounding effects due to defects and/or disorder. In particular, the observation of robust non-thermal switching at meso-scales and at ultrafast timescales, provides a platform for designing high-speed low-energy consumption nano-photonics and electronics devices.

  16. Electronic materials high-T(sub c) superconductivity polymers and composites structural materials surface science and catalysts industry participation

    Science.gov (United States)

    1988-01-01

    The fifth year of the Center for Advanced Materials was marked primarily by the significant scientific accomplishments of the research programs. The Electronics Materials program continued its work on the growth and characterization of gallium arsenide crystals, and the development of theories to understand the nature and distribution of defects in the crystals. The High Tc Superconductivity Program continued to make significant contributions to the field in theoretical and experimental work on both bulk materials and thin films and devices. The Ceramic Processing group developed a new technique for cladding YBCO superconductors for high current applications in work with the Electric Power Research Institute. The Polymers and Composites program published a number of important studies involving atomistic simulations of polymer surfaces with excellent correlations to experimental results. The new Enzymatic Synthesis of Materials project produced its first fluorinated polymers and successfully began engineering enzymes designed for materials synthesis. The structural Materials Program continued work on novel alloys, development of processing methods for advanced ceramics, and characterization of mechanical properties of these materials, including the newly documented characterization of cyclic fatigue crack propagation behavior in toughened ceramics. Finally, the Surface Science and Catalysis program made significant contributions to the understanding of microporous catalysts and the nature of surface structures and interface compounds.

  17. Electronic materials high-T(sub c) superconductivity polymers and composites structural materials surface science and catalysts industry participation

    Science.gov (United States)

    1988-01-01

    The fifth year of the Center for Advanced Materials was marked primarily by the significant scientific accomplishments of the research programs. The Electronics Materials program continued its work on the growth and characterization of gallium arsenide crystals, and the development of theories to understand the nature and distribution of defects in the crystals. The High Tc Superconductivity Program continued to make significant contributions to the field in theoretical and experimental work on both bulk materials and thin films and devices. The Ceramic Processing group developed a new technique for cladding YBCO superconductors for high current applications in work with the Electric Power Research Institute. The Polymers and Composites program published a number of important studies involving atomistic simulations of polymer surfaces with excellent correlations to experimental results. The new Enzymatic Synthesis of Materials project produced its first fluorinated polymers and successfully began engineering enzymes designed for materials synthesis. The structural Materials Program continued work on novel alloys, development of processing methods for advanced ceramics, and characterization of mechanical properties of these materials, including the newly documented characterization of cyclic fatigue crack propagation behavior in toughened ceramics. Finally, the Surface Science and Catalysis program made significant contributions to the understanding of microporous catalysts and the nature of surface structures and interface compounds.

  18. Correlated double electron capture in slow, highly charged ion-atom collisions

    Energy Technology Data Exchange (ETDEWEB)

    Stolterfoht, N.; Havener, C.C.; Phaneuf, R.A.; Swenson, J.K.; Shafroth, S.M.; Meyer, F.W.

    1986-01-01

    Recent measurements of autoionization electrons produced in slow, highly charged ion-atom collisions are reviewed. Mechanisms for double electron capture into equivalent and nonequivalent configurations are analyzed by comparing the probabilities for the creation of L/sub 1/L/sub 23/X Coster Kronig electrons and L-Auger electrons. It is shown that the production of the Coster-Kronig electrons is due to electron correlation effects whose analysis leads beyond the independent-particle model. The importance of correlation effects on different capture mechanisms is discussed. 28 refs., 6 figs.

  19. Electronic correlations in the superconductors AFe{sub 2}As{sub 2} with A = K, Rb, and Cs

    Energy Technology Data Exchange (ETDEWEB)

    Grube, Kai; Eilers, Felix; Zocco, Diego A.; Schweiss, Peter; Heid, Rolf; Wolf, Thomas [Karlsruhe Institute of Technology, Institut fuer Festkoerperphysik, Karlsruhe (Germany); Loehneysen, Hilbert von [Karlsruhe Institute of Technology, Institut fuer Festkoerperphysik, Karlsruhe (Germany); Karlsruhe Institute of Technology, Physikalisches Institut, Karlsruhe (Germany)

    2015-07-01

    Superconductivity in iron pnictides and chalcogenides occurs in the proximity to antiferromagnetic order, giving rise to the assumption that the superconductivity is unconventional and originates from electron-electron interactions. So far, experimental and theoretical studies underpin this assumption but fail to unravel the pairing mechanism. A central question is the role of electronic correlations in these materials. We have investigated the thermal expansion and magnetostriction of the stoichiometric compounds AFe{sub 2}As{sub 2} with A = K, Rb, and Cs. Our measurements show a huge increase of the effective mass quasiparticles m{sub eff} with increasing A ion radius, while the superconducting transition temperature T{sub c} decreases. The relation between superconductivity and electronic correlations will be discussed by using the uniaxial pressure dependences of T{sub c} and m{sub eff} and the temperature dependence of the upper critical field.

  20. Transmission electron microscopy a textbook for materials science

    CERN Document Server

    Williams, David B

    1996-01-01

    Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi­ of materials by completing the processing-structure-prop­ croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them­ to achieve specific sets of properties; the extraordinary abili­ selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM­ of all of these areas before one can hope to tackle signifi­ instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate­ be use...

  1. Effective atomic numbers and electron density of dosimetric material

    Directory of Open Access Journals (Sweden)

    Kaginelli S

    2009-01-01

    Full Text Available A novel method for determination of mass attenuation coefficient of x-rays employing NaI (Tl detector system and radioactive sources is described.in this paper. A rigid geometry arrangement and gating of the spectrometer at FWHM position and selection of absorber foils are all done following detailed investigation, to minimize the effect of small angle scattering and multiple scattering on the mass attenuation coefficient, m/r, value. Firstly, for standardization purposes the mass attenuation coefficients of elemental foils such as Aluminum, Copper, Molybdenum, Tantalum and Lead are measured and then, this method is utilized for dosimetric interested material (sulfates. The experimental mass attenuation coefficient values are compared with the theoretical values to find good agreement between the theory and experiment within one to two per cent. The effective atomic numbers of the biological substitute material are calculated by sum rule and from the graph. The electron density of dosimetric material is calculated using the effective atomic number. The study has discussed in detail the attenuation coefficient, effective atomic number and electron density of dosimetric material/biological substitutes.

  2. Electron beam melting of advanced materials and structures

    Science.gov (United States)

    Mahale, Tushar Ramkrishna

    Layered manufacturing has for long been used for the fabrication of non-functional parts using polymer-based processes. Developments in laser beam and electron beam welding technologies and their adoption to layered manufacturing has made it possible to fabricate high-density functional parts in metal irrespective of the level of complexity. The Electron Beam Melting (EBM) process by Arcam AB is one such layered manufacturing process that utilizes a focused electron beam to process metal powder, layer by layer, in a vacuum environment. Research conducted as part of this body of work looks into the development of both bulk materials in the form of metal alloys and ceramic metal-matrix composites as well as the development of tunable mechanical & thermal metamaterials. Simulation models to approximate electron beam melting were suggested using commercial finite element analysis packages. A framework was developed based on the finite difference method to simulate layered manufacturing using Arcam AB's electron beam melting process. The outputs from the simulation data could be used to better understand the local melting, grain evolution, composition and internal stresses within freeform-fabricated metal parts.

  3. [The innovative dynamic of the mechanics, electronics and materials subsystem].

    Science.gov (United States)

    Maldonado, José; Gadelha, Carlos Augusto Grabois; Costa, Laís Silveira; Vargas, Marco

    2012-12-01

    The mechanics, electronics and materials subsystem, one of the subsystems of the health care productive complex, encompasses different activities, usually clustered in what is called the medical, hospital and dental equipment and materials industry. This is a strategic area for health care, since it represents a continuous source of changes in care practices, and influences the provision of health care services. It has, moreover, potential for promoting the progress of Brazil's system of innovation and for increasing the competitiveness of the industry as a whole, given that it articulates future technologies. Despite the significant growth of this industry in Brazil in recent years, such equipment and materials have been presenting a growing deficit in the balance of trade. This incompatibility between national health care needs and the productive and innovative basis of the industry points to structural fragilities in the system. Using the framework of political economy, the article aims to discuss the development of this industry in Brazil and its challenges.

  4. Superconductor Materials-A Revolutionary Value Addition to Space Electronics

    Directory of Open Access Journals (Sweden)

    Rathindra Nath Biswas

    2004-04-01

    Full Text Available An early success in low temperature superconductor technology has led to the development of a number of high temperature superconductor (H TS materials, which have critical temperature above 77 K. When the temperature of a solid is lowered below critical temperature, the material loses its electrical resistivity. Because resistance is almost zero, superconductors can carry very high current, generating very large homogeneous magnetic fields. Due to these features, it is possible to design electronic devices with extremely thin profile, offering less weight and low manufacturing cost. Such exceptional properties have made HTS materials useful in military and space sectors, wherc airborne systems have already provided with cryogenic infrastructure which can he used for cooling a high temperature superconductor at no extra cost.

  5. Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy

    KAUST Repository

    Shaheen, Basamat

    2017-05-17

    Understanding light-triggered charge carrier dynamics near photovoltaic-material surfaces and at interfaces has been a key element and one of the major challenges for the development of real-world energy devices. Visualization of such dynamics information can be obtained using the one-of-a-kind methodology of scanning ultrafast electron microscopy (S-UEM). Here, we address the fundamental issue of how the thickness of the absorber layer may significantly affect the charge carrier dynamics on material surfaces. Time-resolved snapshots indicate that the dynamics of charge carriers generated by electron impact in the electron-photon dynamical probing regime is highly sensitive to the thickness of the absorber layer, as demonstrated using CdSe films of different thicknesses as a model system. This finding not only provides the foundation for potential applications of S-UEM to a wide range of devices in the fields of chemical and materials research, but also has impact on the use and interpretation of electron beam-induced current for optimization of photoactive materials in these devices.

  6. Electron Microscopy and Image Analysis for Selected Materials

    Science.gov (United States)

    Williams, George

    1999-01-01

    This particular project was completed in collaboration with the metallurgical diagnostics facility. The objective of this research had four major components. First, we required training in the operation of the environmental scanning electron microscope (ESEM) for imaging of selected materials including biological specimens. The types of materials range from cyanobacteria and diatoms to cloth, metals, sand, composites and other materials. Second, to obtain training in surface elemental analysis technology using energy dispersive x-ray (EDX) analysis, and in the preparation of x-ray maps of these same materials. Third, to provide training for the staff of the metallurgical diagnostics and failure analysis team in the area of image processing and image analysis technology using NIH Image software. Finally, we were to assist in the sample preparation, observing, imaging, and elemental analysis for Mr. Richard Hoover, one of NASA MSFC's solar physicists and Marshall's principal scientist for the agency-wide virtual Astrobiology Institute. These materials have been collected from various places around the world including the Fox Tunnel in Alaska, Siberia, Antarctica, ice core samples from near Lake Vostoc, thermal vents in the ocean floor, hot springs and many others. We were successful in our efforts to obtain high quality, high resolution images of various materials including selected biological ones. Surface analyses (EDX) and x-ray maps were easily prepared with this technology. We also discovered and used some applications for NIH Image software in the metallurgical diagnostics facility.

  7. Chemistry of electronic ceramic materials. Proceedings of the International Conference on the Chemistry of Electronic Ceramic Materials

    Science.gov (United States)

    Davies, P. K.; Roth, R. S.

    1991-01-01

    The conference was held at Jackson Hole, Wyoming from August 17 to 22, 1990, and in an attempt to maximize the development of this rapidly moving, multidisciplinary field, this conference brought together major national and international researchers to bridge the gap between those primarily interested in the pure chemistry of inorganic solids and those interested in the physical and electronic properties of ceramics. With the many major discoveries that have occurred over the last decade, one of the goals of this meeting was to evaluate the current understanding of the chemistry of electronic ceramic materials, and to assess the state of a field that has become one of the most important areas of advanced materials research. The topics covered include: crystal chemistry; dielectric ceramics; low temperature synthesis and characterization; solid state synthesis and characterization; surface chemistry; superconductors; theory and modeling.

  8. Hybrid gate dielectric materials for unconventional electronic circuitry.

    Science.gov (United States)

    Ha, Young-Geun; Everaerts, Ken; Hersam, Mark C; Marks, Tobin J

    2014-04-15

    Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry. However, it does not satisfy many of the performance requirements for the aforementioned semiconductors due to its relatively low dielectric constant and intransigent processability. High-k inorganics such as hafnium dioxide (HfO2) or zirconium dioxide (ZrO2) offer some increases in performance, but scientists have great difficulty depositing these materials as smooth films at temperatures compatible with flexible plastic substrates. While various organic polymers are accessible via chemical synthesis and readily form films from solution, they typically exhibit low capacitances, and the corresponding transistors operate at unacceptably high voltages. More recently, researchers have combined the favorable properties of high-k metal oxides and π-electron organics to form processable, structurally well-defined, and robust self-assembled multilayer nanodielectrics, which enable high-performance transistors with a wide variety of unconventional semiconductors. In this Account, we review recent advances in organic-inorganic hybrid gate dielectrics, fabricated by multilayer self-assembly, and their remarkable synergy with unconventional semiconductors. We first discuss the principals and functional

  9. Two-dimensional materials based transparent flexible electronics

    Science.gov (United States)

    Yu, Lili; Ha, Sungjae; El-Damak, Dina; McVay, Elaine; Ling, Xi; Chandrakasan, Anantha; Kong, Jing; Palacios, Tomas

    2015-03-01

    Two-dimensional (2D) materials have generated great interest recently as a set of tools for electronics, as these materials can push electronics beyond traditional boundaries. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. These thin, lightweight, bendable, highly rugged and low-power devices may bring dramatic changes in information processing, communications and human-electronic interaction. In this report, for the first time, we demonstrate two complex transparent flexible systems based on molybdenum disulfide (MoS2) grown by chemical vapor method: a transparent active-matrix organic light-emitting diode (AMOLED) display and a MoS2 wireless link for sensor nodes. The 1/2 x 1/2 square inch, 4 x 5 pixels AMOLED structures are built on transparent substrates, containing MoS2 back plane circuit and OLEDs integrated on top of it. The back plane circuit turns on and off the individual pixel with two MoS2 transistors and a capacitor. The device is designed and fabricated based on SPICE simulation to achieve desired DC and transient performance. We have also demonstrated a MoS2 wireless self-powered sensor node. The system consists of as energy harvester, rectifier, sensor node and logic units. AC signals from the environment, such as near-field wireless power transfer, piezoelectric film and RF signal, are harvested, then rectified into DC signal by a MoS2 diode. CIQM, CICS, SRC.

  10. Electrically conductive and thermally conductive materials for electronic packaging

    Science.gov (United States)

    Liu, Zongrong

    The aim of this dissertation is to develop electrically or thermally conductive materials that are needed for electronic packaging and microelectronic cooling. These materials are in the form of coatings and are made from pastes. The research work encompasses paste formulation, studying the process of converting a paste to a conductive material, relating the processing conditions to the structure and performance, and evaluating performance attributes that are relevant to the application of these conductive materials. The research has resulted in new information that is valuable to the microelectronic industry. Work on electrically conductive materials emphasizes the development of electrical interconnection materials in the form of air-firable glass-free silver-based electrically conductive thick films, which use the Ti-Al alloy as the binder and are in contrast to conventional films that use glass as the binder. The air-firability, as enabled by minor additions of tin and zinc to the paste, is in contrast to previous glass-free films that are not firable. The recommended firing condition is 930°C in air. The organic vehicle in the paste comprises ethyl cellulose, which undergoes thermal decomposition during burnout of the paste. The ethyl cellulose is dissolved in ether, which facilitates the burnout. Excessive ethyl cellulose hinders the burnout. A higher heating rate results in more residue after burnout. The presence of silver particles facilitates drying and burnout. Firing in air gives lower resistivity than firing in oxygen. Firing in argon gives poor films. Compared to conventional films that use glass as the binder, these films, when appropriately fired, exhibit lower electrical resistivity (2.5 x 10-6 O.cm) and higher scratch resistance. Work on thermally conductive materials addresses thermal interface materials, which are materials placed at the interface between a heat sink and a heat source for the purpose of improving the thermal contact. Heat

  11. Universal correlations of one-dimensional electrons at low density

    OpenAIRE

    Göhmann, F.

    2000-01-01

    We summarize results on the asymptotics of the two-particle Green functions of interacting electrons in one dimension. Below a critical value of the chemical potential the Fermi surface vanishes, and the system can no longer be described as a Luttinger liquid. Instead, the non-relativistic Fermi gas with infinite point-like repulsion becomes the universal model for the long-wavelength, low temperature physics of the one-dimensional electrons. This model, which we call the impenetrable electro...

  12. Fluctuation Electron Microscopy of Amorphous and Polycrystalline Materials

    Science.gov (United States)

    Rezikyan, Aram

    Fluctuation Electron Microscopy (FEM) has become an effective materials' structure characterization technique, capable of probing medium-range order (MRO) that may be present in amorphous materials. Although its sensitivity to MRO has been exercised in numerous studies, FEM is not yet a quantitative technique. The holdup has been the discrepancy between the computed kinematical variance and the experimental variance, which previously was attributed to source incoherence. Although high-brightness, high coherence, electron guns are now routinely available in modern electron microscopes, they have not eliminated this discrepancy between theory and experiment. The main objective of this thesis was to explore, and to reveal, the reasons behind this conundrum. The study was started with an analysis of the speckle statistics of tilted dark-field TEM images obtained from an amorphous carbon sample, which confirmed that the structural ordering is sensitively detected by FEM. This analysis also revealed the inconsistency between predictions of the source incoherence model and the experimentally observed variance. FEM of amorphous carbon, amorphous silicon and ultra nanocrystalline diamond samples was carried out in an attempt to explore the conundrum. Electron probe and sample parameters were varied to observe the scattering intensity variance behavior. Results were compared to models of probe incoherence, diffuse scattering, atom displacement damage, energy loss events and multiple scattering. Models of displacement decoherence matched the experimental results best. Decoherence was also explored by an interferometric diffraction method using bilayer amorphous samples, and results are consistent with strong displacement decoherence in addition to temporal decoherence arising from the electron source energy spread and energy loss events in thick samples. It is clear that decoherence plays an important role in the long-standing discrepancy between experimental FEM and its

  13. Electronic materials with a wide band gap: recent developments

    Directory of Open Access Journals (Sweden)

    Detlef Klimm

    2014-09-01

    Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

  14. Electron correlation effects on the d-d excitations in NiO

    NARCIS (Netherlands)

    de Graaf, C; Broer, R.; Nieuwpoort, WC

    1996-01-01

    The partly filled 3d shell in solid transition metal compounds is quite localized on the transition metal ion and gives rise to large electron correlation effects. With the recently developed CASSCF/CASPT2 approach electron correlation effects can be accounted for efficiently. The CASSCF step

  15. Data mining graphene: correlative analysis of structure and electronic degrees of freedom in graphenic monolayers with defects

    Science.gov (United States)

    Ziatdinov, Maxim; Fujii, Shintaro; Kiguchi, Manabu; Enoki, Toshiaki; Jesse, Stephen; Kalinin, Sergei V.

    2016-12-01

    The link between changes in the material crystal structure and its mechanical, electronic, magnetic and optical functionalities—known as the structure-property relationship—is the cornerstone of modern materials science research. The recent advances in scanning transmission electron and scanning probe microscopies (STEM and SPM) have opened an unprecedented path towards examining the structure-property relationships of materials at the single-impurity and atomic-configuration levels. However, there are no statistics-based approaches for cross-correlation of structure and property variables obtained from the different information channels of STEM and SPM experiments. Here we have designed an approach based on a combination of sliding window fast Fourier transform, Pearson correlation matrix and linear and kernel canonical correlation methods to study the relationship between lattice distortions and electron scattering from SPM data on graphene with defects. Our analysis revealed that the strength of coupling to strain is altered between different scattering channels, which can explain the coexistence of several quasiparticle interference patterns in nanoscale regions of interest. In addition, the application of kernel functions allowed us to extract a non-linear component of the relationship between the lattice strain and scattering intensity in graphene. The outlined approach can be further used to analyze correlations in various multi-modal imaging techniques where the information of interest is spatially distributed and generally has a complex multi-dimensional nature.

  16. Electron Transport Materials: Synthesis, Properties and Device Performance

    Energy Technology Data Exchange (ETDEWEB)

    Cosimbescu, Lelia; Wang, Liang; Helm, Monte L.; Polikarpov, Evgueni; Swensen, James S.; Padmaperuma, Asanga B.

    2012-06-01

    We report the design, synthesis and characterization, thermal and photophysical properties of two silane based electron transport materials, dibenzo[b,d]thiophen-2-yltriphenylsilane (Si{phi}87) and (dibenzo[b,d]thiophen-2-yl)diphenylsilane (Si{phi}88) and their performance in blue organic light emitting devices (OLEDs). The utility of these materials in blue OLEDs with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C']picolinate (Firpic) as the phosphorescent emitter was demonstrated. Using the silane Si{phi}87 as the electron transport material (ETm) an EQE of 18.2% was obtained, with a power efficiency of 24.3 lm/W (5.8V at 1mA/cm{sup 2}), in a heterostructure. When Si{phi}88 is used, the EQE is 18.5% with a power efficiency of 26.0 lm/W (5.5V at 1mA/cm{sup 2}).

  17. Virtual screening of electron acceptor materials for organic photovoltaic applications

    Science.gov (United States)

    Halls, Mathew D.; Djurovich, Peter J.; Giesen, David J.; Goldberg, Alexander; Sommer, Jonathan; McAnally, Eric; Thompson, Mark E.

    2013-10-01

    Virtual screening involves the generation of structure libraries, automated analysis to predict properties related to application performance and subsequent screening to identify lead systems and estimate critical structure-property limits across a targeted chemical design space. This approach holds great promise for informing experimental discovery and development efforts for next-generation materials, such as organic semiconductors. In this work, the virtual screening approach is illustrated for nitrogen-substituted pentacene molecules to identify systems for development as electron acceptor materials for use in organic photovoltaic (OPV) devices. A structure library of tetra-azapentacenes (TAPs) was generated by substituting four nitrogens for CH at 12 sites on the pentacene molecular framework. Molecular properties (e.g. ELUMO, Eg and μ) were computed for each candidate structure using hybrid DFT at the B3LYP/6-311G** level of theory. The resulting TAPs library was then analyzed with respect to intrinsic properties associated with OPV acceptor performance. Marcus reorganization energies for charge transport for the most favorable TAP candidates were then calculated to further determine suitability as OPV electron acceptors. The synthesis, characterization and OPV device testing of TAP materials is underway, guided by these results.

  18. Relaxation of a Classical Spin Coupled to a Strongly Correlated Electron System

    Science.gov (United States)

    Sayad, Mohammad; Rausch, Roman; Potthoff, Michael

    2016-09-01

    A classical spin which is antiferromagnetically coupled to a system of strongly correlated conduction electrons is shown to exhibit unconventional real-time dynamics which cannot be described by Gilbert damping. Depending on the strength of the local Coulomb interaction U , the two main electronic dissipation channels, namely transport of excitations via correlated hopping and via excitations of correlation-induced magnetic moments, become active on largely different time scales. We demonstrate that correlations can lead to a strongly suppressed relaxation which so far has been observed in purely electronic systems only and which is governed here by proximity to the divergent magnetic time scale in the infinite-U limit.

  19. Nanomembrane-based materials for Group IV semiconductor quantum electronics.

    Science.gov (United States)

    Paskiewicz, D M; Savage, D E; Holt, M V; Evans, P G; Lagally, M G

    2014-02-27

    Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

  20. Electronic processes in thin-film PV materials. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P.C.; Chen, D.; Chen, S.L. [and others

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  1. Bridging Single- and Multireference Domains for Electron Correlation: Spin-Extended Coupled Electron Pair Approximation.

    Science.gov (United States)

    Tsuchimochi, Takashi; Ten-No, Seiichiro

    2017-04-11

    We propose a size-consistent generalization of the recently developed spin-extended configuration interaction with singles and doubles (ECISD), where a CI wave function is explicitly spin-projected. The size-consistent effect is effectively incorporated by treating quadruples within the formulation of coupled electron pair approximation. As in coupled-cluster theory, quadruple excitations are approximated by a disconnected product of double excitations. Despite its conceptual similarity to the standard single-reference and multireference analogues, such a generalization requires careful derivation, as the spin-projected CI space is nonorthogonal and overcomplete. Although our methods generally yield better results than ECISD, size-consistency is only approximately retained because the action of a symmetry-projection operator is size-inconsistent. In this work, we focus on simple models where exclusion-principle-violating terms, which eliminate undesired contributions to the correlation effects, are either completely neglected or averaged. These models possess an orbital-invariant energy functional that is to be minimized by diagonalizing an energy-shifted effective Hamiltonian within the singles and doubles manifold. This allows for a straightforward generalization of the ECISD analytical gradients needed to determine molecular properties and geometric optimization. Given the multireference nature of the spin-projected Hartree-Fock method, the proposed approaches are expected to handle static correlation, unlike single-reference analogues. We critically assess the performance of our methods using dissociation curves of molecules, singlet-triplet splitting gaps, hyperfine coupling constants, and the chromium dimer. The size-consistency and size-extensivity of the methods are also discussed.

  2. High-energy photoemission spectroscopy for investigating bulk electronic structures of strongly correlated systems

    Energy Technology Data Exchange (ETDEWEB)

    Sekiyama, Akira, E-mail: sekiyama@mp.es.osaka-u.ac.jp [Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Osaka (Japan); SPring-8/RIKEN, Sayo 679-5148, Hyogo (Japan)

    2016-04-15

    Progress of high-energy photoemission spectroscopy for investigating the bulk electronic structures of strongly correlated electron systems is reviewed. High-resolution soft X-ray photoemission has opened the door for revealing the bulk strongly correlated spectral functions overcoming the surface contributions. More bulk-sensitive hard X-ray photoemission spectroscopy (HAXPES) enables us to study the electronic structure with negligible surface contribution. The recent development of the polarization-dependent HAXPES is also described in this short review.

  3. Scanning Probe Evaluation of Electronic, Mechanical and Structural Material Properties

    Science.gov (United States)

    Virwani, Kumar

    2011-03-01

    We present atomic force microscopy (AFM) studies of a range of properties from three different classes of materials: mixed ionic electronic conductors, low-k dielectrics, and polymer-coated magnetic nanoparticles. (1) Mixed ionic electronic conductors are being investigated as novel diodes to drive phase-change memory elements. Their current-voltage characteristics are measured with direct-current and pulsed-mode conductive AFM (C-AFM). The challenges to reliability of the C-AFM method include the electrical integrity of the probe, the sample and the contacts, and the minimization of path capacitance. The role of C-AFM in the optimization of these electro-active materials will be presented. (2) Low dielectric constant (low-k) materials are used in microprocessors as interlayer insulators, a role directly affected by their mechanical performance. The mechanical properties of nanoporous silicate low-k thin films are investigated in a comparative study of nanomechanics measured by AFM and by traditional nanoindentation. Both methods are still undergoing refinement as reliable analytical tools for determining nanomechanical properties. We will focus on AFM, the faster of the two methods, and its developmental challenges of probe shape, cantilever force constant, machine compliance and calibration standards. (3) Magnetic nanoparticles are being explored for their use in patterned media for magnetic storage. Current methods for visualizing the core-shell structure of polymer-coated magnetic nanoparticles include dye-staining the polymer shell to provide contrast in transmission electron microscopy. AFM-based fast force-volume measurements provide direct visualization of the hard metal oxide core within the soft polymer shell based on structural property differences. In particular, the monitoring of adhesion and deformation between the AFM tip and the nanoparticle, particle-by-particle, provides a reliable qualitative tool to visualize core-shell contrast without the use

  4. Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity.

    Science.gov (United States)

    Lee, Myoung-Jae; Ahn, Ji-Hoon; Sung, Ji Ho; Heo, Hoseok; Jeon, Seong Gi; Lee, Woo; Song, Jae Yong; Hong, Ki-Ha; Choi, Byeongdae; Lee, Sung-Hoon; Jo, Moon-Ho

    2016-06-21

    In general, in thermoelectric materials the electrical conductivity σ and thermal conductivity κ are related and thus cannot be controlled independently. Previously, to maximize the thermoelectric figure of merit in state-of-the-art materials, differences in relative scaling between σ and κ as dimensions are reduced to approach the nanoscale were utilized. Here we present an approach to thermoelectric materials using tin disulfide, SnS2, nanosheets that demonstrated a negative correlation between σ and κ. In other words, as the thickness of SnS2 decreased, σ increased whereas κ decreased. This approach leads to a thermoelectric figure of merit increase to 0.13 at 300 K, a factor ∼1,000 times greater than previously reported bulk single-crystal SnS2. The Seebeck coefficient obtained for our two-dimensional SnS2 nanosheets was 34.7 mV K(-1) for 16-nm-thick samples at 300 K.

  5. Dihydroazulene Photochromism:Synthesis, Molecular Electronics and Hammett Correlations

    DEFF Research Database (Denmark)

    Broman, Søren Lindbæk

    This thesis describes the development of a versatile synthetic protocol for preparation of a large selection of dihydroazulenes (DHAs) with both electron withdrawing and donating groups. By UV-Vis and NMR spectroscopies and even in a single-molecule junction, their ability to undergo a light-indu...

  6. Correlating electronic and vibrational motions in charge transfer systems

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, Munira [Univ. of Washington, Seattle, WA (United States)

    2014-06-27

    The goal of this research program was to measure coupled electronic and nuclear motions during photoinduced charge transfer processes in transition metal complexes by developing and using novel femtosecond spectroscopies. The scientific highlights and the resulting scientific publications from the DOE supported work are outlined in the technical report.

  7. Electronic detection of ultra-heavy nuclei by pyroelectric materials

    Science.gov (United States)

    Simpson, J. A.; Tuzzolino, A. J.

    1983-01-01

    A recent prediction by the authors that pyroelectric materials may be capable of detecting ultra-heavy nuclei has been confirmed. Charge pulse signals from pyroelectric crystals of lithium tantalate exposed to Au ions and a pulsed beam of Ni-58 ions, and from pyroelectric films of polyvinylidene fluoride exposed to a pulsed beam of Ni-58 ions, have been measured using pulse electronics with time constants in the microsecond range. These studies show that pyroelectric materials, in general, are capable of detecting incident nuclei having very high mass and charge. In particular, pyroelectric polymers, such as polyvinylidene fluoride, are readily available as inexpensive flexible films. This new class of charged particle detector could eventually find applications in large-area experiments for detection and trajectory determination of low-energy, ultra-heavy nuclei.

  8. Fluctuation electron microscopy studies of complex structured materials

    Science.gov (United States)

    Zhao, Gongpu; Rougée, Annick; Buseck, Peter; Treacy, Michael

    2008-03-01

    Fluctuation electron microscopy (FEM) is a hybrid imaging-diffraction technique. This technique is particularly sensitive to paracrystalline structures of dimension 0.5-2 nm, which are difficult to detect by either imaging or diffraction techniques alone. It has been successfully deployed to study paracrystalline structures in amorphous silicon, germanium thin film. This technique has also been used to study metallic glasses and oxide glasses. Until now, FEM has not been used to study disordered geological materials. In this talk we present our FEM studies of shungite, a naturally occurring disordered carbonaceous material, reveal that trace quantities of tightly curved graphene structures such as C60, or fragments of C60, is present in shungite. We also present results from our study of metamict zircon, whose crystal structure is destroyed by self-radiation during naturally occurring α decay events. Work is in progress to study the structural evolution during the metamictization process.

  9. Velocity Dispersion of Correlated Energy Spread Electron Beams in the Free Electron Laser

    CERN Document Server

    Campbell, L T

    2016-01-01

    The effects of a correlated linear energy/velocity chirp in the electron beam in the FEL, and how to compensate for its effects by using an appropriate taper (or reverse-taper) of the undulator magnetic field, is well known. The theory, as described thus far, ignores velocity dispersion from the chirp in the undulator, taking the limit of a `small' chirp. In the following, the physics of compensating for chirp in the beam is revisited, including the effects of velocity dispersion, or beam compression or decompression, in the undulator. It is found that the limit of negligible velocity dispersion in the undulator is different from that previously identified as the small chirp limit, and is more significant than previously considered. The velocity dispersion requires a taper which is non-linear to properly compensate for the effects of the detuning, and also results in a varying peak current (end thus a varying gain length) over the length of the undulator. The results may be especially significant for plasma d...

  10. Electron-phonon interaction dressed by electronic correlations near charge ordering. Possible implications for cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Foussats, A [Facultad de Ciencias Exactas, Ingenieria y Agrimensura and Instituto de Fisica Rosario (UNR-CONICET), Avenida Pellegrini 250-2000 Rosario (Argentina); Greco, A [Facultad de Ciencias Exactas, Ingenieria y Agrimensura and Instituto de Fisica Rosario (UNR-CONICET), Avenida Pellegrini 250-2000 Rosario (Argentina); Bejas, M [Facultad de Ciencias Exactas, Ingenieria y Agrimensura and Instituto de Fisica Rosario (UNR-CONICET), Avenida Pellegrini 250-2000 Rosario (Argentina); Muramatsu, A [Institut fuer Theoretische Physik III, Universitaet Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart (Germany)

    2006-12-20

    We consider possible routes to superconductivity on the basis of the t-J-V model plus phonons on the triangular lattice. We studied the stability conditions for the homogeneous Fermi liquid (HFL) phase against different broken symmetry phases. Besides the {radical}3 x{radical}3 CDW phase, triggered by the nearest-neighbour Coulomb interaction V, we have found that the HFL is unstable, at very low doping, against a bond-ordered phase due to J. We also discuss the occurrence of phase separation at low doping and V. The interplay between the electron-phonon interaction and correlations near the {radical}3 x{radical}3 CDW leads to superconductivity in the unconventional next-nearest-neighbour f-wave (NNN-f) channel with a dome shape for T{sub c} around x{approx}0.35, and with values of a few kelvin. Near the bond-ordered phase at low doping we found tendencies to superconductivity with d-wave symmetry for finite J and x<0.15. Possible implications for cobaltates are discussed.

  11. Environmental transmission electron microscopy for catalyst materials using a spherical aberration corrector

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Seiji, E-mail: takeda@sanken.osaka-u.ac.jp; Kuwauchi, Yasufumi; Yoshida, Hideto

    2015-04-15

    Atomic resolution has been obtained using environmental transmission electron microscopy (ETEM) by installing a spherical aberration corrector (Cs-corrector) on the objective lens. Simultaneously, the technology for controlling the environment around a specimen in ETEM has advanced significantly in the past decade. Quantification methodology has recently been established for deriving relevant experimental data in catalyst materials from substantial and systematic ETEM observation at the atomic scale. With this background, this paper summarizes aspects of the evolutional microscopy technique: necessary conditions for atomic resolution in ETEM; reduction of the scattering of electrons by the medium surrounding a specimen; and an environmental cell for structural imaging of a crystalline specimen. The high spatial resolution of a Cs-corrected ETEM is demonstrated for different observation conditions. After statistical analysis combined with numerical image analysis of ETEM data is briefly described, the recent applications of the Cs-corrected ETEM to catalyst materials are reviewed. For gold nanoparticulate catalysts, the structural information on the reaction sites and adsorption sites are deduced. For Pt nanoparticulate catalysts, ETEM studies elucidate the correlation between the catalytic activity and the morphology of the nanoparticles. These studies also reveal oxidation and reduction on the topmost Pt surface layer at the atomic scale. Finally, current issues and the future perspectives of Cs-corrected ETEM are summarized, including the reproducibility of ETEM observation data, the control of environments, the critical evaluation of electron irradiation effects, the full implementation of transmission electron microscopy technology in ETEM, and the safety issues for an ETEM laboratory. - Highlights: • Advancement of Cs corrected environmental transmission electron microscopy. • Structural determination of catalyst materials in reaction environments.

  12. Scanning and Transmission Electron Microscopy of High Temperature Materials

    Science.gov (United States)

    1994-01-01

    Software and hardware updates to further extend the capability of the electron microscope were carried out. A range of materials such as intermetallics, metal-matrix composites, ceramic-matrix composites, ceramics and intermetallic compounds, based on refractory elements were examined under this research. Crystal structure, size, shape and volume fraction distribution of various phases which constitute the microstructures were examined. Deformed materials were studied to understand the effect of interfacial microstructure on the deformation and fracture behavior of these materials. Specimens tested for a range of mechanical property requirements, such as stress rupture, creep, low cycle fatigue, high cycle fatigue, thermomechanical fatigue, etc. were examined. Microstructural and microchemical stability of these materials exposed to simulated operating environments were investigated. The EOIM Shuttle post-flight samples were also examined to understand the influence of low gravity processing on microstructure. In addition, fractographic analyses of Nb-Zr-W, titanium aluminide, molybdenum silicide and silicon carbide samples were carried out. Extensive characterization of sapphire fibers in the fiber-reinforced composites made by powder cloth processing was made. Finally, pressure infiltration casting of metal-matrix composites was carried out.

  13. Elastic properties of superconductors and materials with weakly correlated spins

    OpenAIRE

    Binek, Christian

    2017-01-01

    It is shown that in the ergodic regime, the temperature dependence of Young?s modulus is solely determined by the magnetic properties of a material. For the large class of materials with paramagnetic or diamagnetic response, simple functional forms of the temperature derivative of Young?s modulus are derived and compared with experimental data and empirical results. Superconducting materials in the Meissner phase are ideal diamagnets. As such, they display remarkable elastic properties. Const...

  14. Correlation between structure, doping and performance of thermoelectric materials

    OpenAIRE

    ZHAO Yu

    2014-01-01

    Thermoelectric materials can convert thermal energy into electrical energy and vice-versa. They are widely used in energy harvesters, thermal sensors, and cooling systems. However, the low efficiency and high cost of the known material compositions limit their widespread utilization in electricity generation applications. Therefore, there is a strong interest in identifying new thermoelectric materials with high figure of merit. In response to this need, this dissertation works on the synthes...

  15. Elastic properties of superconductors and materials with weakly correlated spins.

    Science.gov (United States)

    Binek, Christian

    2017-07-07

    It is shown that in the ergodic regime, the temperature dependence of Young's modulus is solely determined by the magnetic properties of a material. For the large class of materials with paramagnetic or diamagnetic response, simple functional forms of the temperature derivative of Young's modulus are derived and compared with experimental data and empirical results. Superconducting materials in the Meissner phase are ideal diamagnets. As such, they display remarkable elastic properties. Constant diamagnetic susceptibility gives rise to a temperature independent elastic modulus for ceramic and single crystalline superconductors alike. The thermodynamic approach established in this report, paves the way to tailor elastic material parameters through the design of magnetic properties.

  16. Strongly correlated electron systems: Photoemission and the single-impurity model

    Energy Technology Data Exchange (ETDEWEB)

    Arko, A.J.; Joyce, J.J.; Andrews, A.B.; Thompson, J.D.; Smith, J.L.; Mandrus, D.; Hundley, M.F.; Cornelius, A.L. [Los Alamos National Laboratories, Los Alamos, New Mexico 87545 (United States); Moshopoulou, E.; Fisk, Z. [NHMFL, Florida State University, Tallahassee, Florida 32306-4005 (United States); Canfield, P.C. [Iowa State University/Ames Laboratory, Ames, Iowa 50011 (United States); Menovsky, A. [Natuurkundig Laboratorium, University of Amsterdam, Amsterdam (The Netherlands)

    1997-09-01

    We present high-resolution, angle-resolved photoemission spectra for Ce-based and U-based strongly correlated electron systems. The experimental results are irreconcilable with the long-accepted single-impurity model, which predicts a narrow singlet state, in close proximity to the Fermi energy, whose linewidth and binding energy are a constant determined by a characteristic temperature T{sub K} for the material. We report that both 4f and 5f photoemission features disperse with crystal momentum at temperatures both above and below T{sub K}; these are characteristics consistent with narrow bands but not with the single-impurity model. Inclusion of the lattice must be considered at all temperatures. Variants of the periodic Anderson model are consistent with this approach. {copyright} {ital 1997} {ital The American Physical Society}

  17. Dihydroazulene Photochromism:Synthesis, Molecular Electronics and Hammett Correlations

    DEFF Research Database (Denmark)

    Broman, Søren Lindbæk

    This thesis describes the development of a versatile synthetic protocol for preparation of a large selection of dihydroazulenes (DHAs) with both electron withdrawing and donating groups. By UV-Vis and NMR spectroscopies and even in a single-molecule junction, their ability to undergo a light...... will be discussed in detail. The second chapter describes the design and synthesis of DHA/VHFs intended for use in molecular electronics and their solution and single-molecule junction switching properties. By the expansion of the recently reported procedure for functionalization of this system by Suzuki cross...... of back-reaction was increased with close to a factor of 2 which is only the statistical improvement of having two possible sites for back-reaction as supposed to just one. The fifth chapter describes, in short, my contributions to an additional seven papers published. Figure 1. Structure of proposed...

  18. Towards an ab-initio treatment of nonlocal electronic correlations with dynamical vertex approximation

    Science.gov (United States)

    Galler, Anna; Gunacker, Patrik; Tomczak, Jan; Thunström, Patrik; Held, Karsten

    Recently, approaches such as the dynamical vertex approximation (D ΓA) or the dual-fermion method have been developed. These diagrammatic approaches are going beyond dynamical mean field theory (DMFT) by including nonlocal electronic correlations on all length scales as well as the local DMFT correlations. Here we present our efforts to extend the D ΓA methodology to ab-initio materials calculations (ab-initio D ΓA). Our approach is a unifying framework which includes both GW and DMFT-type of diagrams, but also important nonlocal correlations beyond, e.g. nonlocal spin fluctuations. In our multi-band implementation we are using a worm sampling technique within continuous-time quantum Monte Carlo in the hybridization expansion to obtain the DMFT vertex, from which we construct the reducible vertex function using the two particle-hole ladders. As a first application we show results for transition metal oxides. Support by the ERC project AbinitioDGA (306447) is acknowledged.

  19. Electron correlations in transition metal-telluride cluster compounds

    NARCIS (Netherlands)

    Palstra, T.T.M.; Steigerwald, M.L.; Ramirez, A.P.; Zaanen, J.

    1994-01-01

    We report the magnetic properties of a new class of materials: Ni9Te6n+ and Co6Te8n+ with n = 0, 1, 2. These cluster compounds, which can be charged by chemical means from neutral to 2 +, provide a unique and novel way to change the Fermi level. For most charge states, we observe quenching of the

  20. Naphthobischalcogenadiazole Conjugated Polymers: Emerging Materials for Organic Electronics.

    Science.gov (United States)

    Osaka, Itaru; Takimiya, Kazuo

    2017-02-27

    π-Conjugated polymers are an important class of materials for organic electronics. In the past decade, numerous polymers with donor-acceptor molecular structures have been developed and used as the active materials for organic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The choice of the building unit is the primary step for designing the polymers. Benzochalcogenadiazoles (BXzs) are one of the most familiar acceptor building units studied in this area. As their doubly fused system, naphthobischalcogenadiazoles (NXzs), i.e., naphthobisthiadiazole (NTz), naphthobisoxadiazole (NOz), and naphthobisselenadiazole (NSz) are emerging building units that provide interesting electronic properties and highly self-assembling nature for π-conjugated polymers. With these fruitful features, π-conjugated polymers based on these building units demonstrate great performances in OFETs and OPVs. In particular, in OPVs, NTz-based polymers have exhibited more than 10% efficiency, which is among the highest values reported so far. In this Progress Report, the synthesis, properties, and structures of NXzs and their polymers is summarized. The device performance is also highlighted and the structure-property relationships of the polymers are discussed.

  1. Electron correlation effects in the presence of non-symmetry dictated nodes

    Indian Academy of Sciences (India)

    P Singha Deo

    2002-02-01

    We numerically study the effect of non-symmetry dictated nodes (NSDN) on electron correlation effects for spinless electrons. We find that repulsive interaction between electrons can enhance the overlap between nearest neighbors in the tight binding Hamiltonian, in the presence of NSDN. Normally, in the absence of NSDN, attractive interaction between electrons give such an effect and repulsive interaction gives the opposite effect.

  2. Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

    Science.gov (United States)

    Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

    2017-03-01

    We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

  3. Influence of lattice vibrations on the field driven electronic transport in chains with correlated disorder

    Science.gov (United States)

    da Silva, L. D.; Sales, M. O.; Ranciaro Neto, A.; Lyra, M. L.; de Moura, F. A. B. F.

    2016-12-01

    We investigate electronic transport in a one-dimensional model with four different types of atoms and long-ranged correlated disorder. The latter was attained by choosing an adequate distribution of on-site energies. The wave-packet dynamics is followed by taking into account effects due to a static electric field and electron-phonon coupling. In the absence of electron-phonon coupling, the competition between correlated disorder and the static electric field promotes the occurrence of wave-packet oscillations in the regime of strong correlations. When the electron-lattice coupling is switched on, phonon scattering degrades the Bloch oscillations. For weak electron-phonon couplings, a coherent oscillatory-like dynamics of the wave-packet centroid persists for short periods of time. For strong couplings the wave-packet acquires a diffusive-like displacement and spreading. A slower sub-diffusive spreading takes place in the regime of weak correlations.

  4. Material Processing Opportunites Utilizing a Free Electron Laser

    Science.gov (United States)

    Todd, Alan

    1996-11-01

    Many properties of photocathode-driven Free Electron Lasers (FEL) are extremely attractive for material processing applications. These include: 1) broad-band tunability across the IR and UV spectra which permits wavelength optimization, depth deposition control and utilization of resonance phenomena; 2) picosecond pulse structure with continuous nanosecond spacing for optimum deposition efficiency and minimal collateral damage; 3) high peak and average radiated power for economic processing in quantity; and 4) high brightness for spatially defined energy deposition and intense energy density in small spots. We discuss five areas: polymer, metal and electronic material processing, micromachining and defense applications; where IR or UV material processing will find application if the economics is favorable. Specific examples in the IR and UV, such as surface texturing of polymers for improved look and feel, and anti-microbial food packaging films, which have been demonstrated using UV excimer lamps and lasers, will be given. Unfortunately, although the process utility is readily proven, the power levels and costs of lamps and lasers do not scale to production margins. However, from these examples, application specific cost targets ranging from 0.1=A2/kJ to 10=A2/kJ of delivered radiation at power levels from 10 kW to 500 kW, have been developed and are used to define strawman FEL processing systems. Since =46EL radiation energy extraction from the generating electron beam is typically a few percent, at these high average power levels, economic considerations dictate the use of a superconducting RF accelerator with energy recovery to minimize cavity and beam dump power loss. Such a 1 kW IR FEL, funded by the US Navy, is presently under construction at the Thomas Jefferson National Accelerator Facility. This dual-use device, scheduled to generate first light in late 1997, will test both the viability of high-power FELs for shipboard self-defense against cruise

  5. Electronic structure of nanocrystalline and polycrystalline hydrogen storage materials

    Energy Technology Data Exchange (ETDEWEB)

    Smardz, L. [Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17 Street, 60-179 Poznan (Poland); Jurczyk, M.; Smardz, K.; Nowak, M.; Makowiecka, M.; Okonska, I. [Institute of Materials Science and Engineering, Poznan University of Technology, M. Sklodowska-Curie 5 Sq., 60-965 Poznan (Poland)

    2008-02-15

    To optimise the choice of the compounds for a selected application, a better understanding of the role of each alloy constituent on the electronic properties of the material is crucial. In this work, we study experimentally the electronic properties of nanocrystalline and polycrystalline (Mg{sub 1-x}M{sub x}){sub 2}Ni, (Mg{sub 1-x}M{sub x}){sub 2}Cu, La(Ni{sub 1-x}M{sub x}){sub 5}, and Ti(Ni{sub 1-x}M'{sub x}) (M = Mn, Al; M' = Fe, Mg, Zr) alloys. The nanocrystalline and polycrystalline samples were prepared by mechanical alloying (MA) followed by annealing and arc melting method, respectively. All X-ray photoelectron spectroscopy (XPS) spectra were measured immediately after cleaning of the sample surface in a vacuum of 8 x 10{sup -11} mbar. Furthermore, we have measured XPS spectra of in situ prepared nanocrystalline and polycrystalline LaNi{sub 5}, TiNi, and Mg{sub 2}Ni thin films and compared with those obtained for ex situ prepared bulk materials. The substitution of Mg in Mg{sub 2}Ni and Mg{sub 2}Cu, Ni in LaNi{sub 5} and TiNi by transition metals leads to significant modifications of the shape and width of the valence band of the nanocrystalline as well as polycrystalline samples. Especially, the valence bands of the MA nanocrystalline alloys are considerably broader compared to those measured for the polycrystalline samples. Results also showed that the strong modifications of the electronic structure of the nanocrystalline alloys could significantly influence on their hydrogenation properties. (author)

  6. Role of protein fluctuation correlations in electron transfer in photosynthetic complexes.

    Science.gov (United States)

    Nesterov, Alexander I; Berman, Gennady P

    2015-04-01

    We consider the dependence of the electron transfer in photosynthetic complexes on correlation properties of random fluctuations of the protein environment. The electron subsystem is modeled by a finite network of connected electron (exciton) sites. The fluctuations of the protein environment are modeled by random telegraph processes, which act either collectively (correlated) or independently (uncorrelated) on the electron sites. We derived an exact closed system of first-order linear differential equations with constant coefficients, for the average density matrix elements and for their first moments. Under some conditions, we obtained analytic expressions for the electron transfer rates and found the range of parameters for their applicability by comparing with the exact numerical simulations. We also compared the correlated and uncorrelated regimes and demonstrated numerically that the uncorrelated fluctuations of the protein environment can, under some conditions, either increase or decrease the electron transfer rates.

  7. The Role of Protein Fluctuation Correlations in Electron Transfer in Photosynthetic Complexes

    CERN Document Server

    Nesterov, Alexander I

    2014-01-01

    We consider the dependence of the electron transfer in photosynthetic complexes on correlation properties of random fluctuations of the protein environment. The electron subsystem is modeled by a finite network of connected electron (exciton) sites. The fluctuations of the protein environment are modeled by random telegraph processes, which act either collectively (correlated) or independently (uncorrelated) on the electron sites. We derived an exact closed system of first-order linear differential equations with constant coefficients, for the average density matrix elements and for their first moments. Under some conditions, we obtain analytic expressions for the electron transfer rates. We compare the correlated and uncorrelated regimes, and demonstrated numerically that the uncorrelated fluctuations of the protein environment can, under some conditions, either increase or decrease the electron transfer rates.

  8. Spin-resolved correlations in the warm-dense homogeneous electron gas

    Science.gov (United States)

    Arora, Priya; Kumar, Krishan; Moudgil, R. K.

    2017-04-01

    We have studied spin-resolved correlations in the warm-dense homogeneous electron gas by determining the linear density and spin-density response functions, within the dynamical self-consistent mean-field theory of Singwi et al. The calculated spin-resolved pair-correlation function gσσ'(r) is compared with the recent restricted path-integral Monte Carlo (RPIMC) simulations due to Brown et al. [Phys. Rev. Lett. 110, 146405 (2013)], while interaction energy Eint and exchange-correlation free energy Fxc with the RPIMC and very recent ab initio quantum Monte Carlo (QMC) simulations by Dornheim et al. [Phys. Rev. Lett. 117, 156403 (2016)]. g↑↓(r) is found to be in good agreement with the RPIMC data, while a mismatch is seen in g↑↑(r) at small r where it becomes somewhat negative. As an interesting result, it is deduced that a non-monotonic T-dependence of g(0) is driven primarily by g↑↓(0). Our results of Eint and Fxc exhibit an excellent agreement with the QMC study due to Dornheim et al., which deals with the finite-size correction quite accurately. We observe, however, a visible deviation of Eint from the RPIMC data for high densities ( 8% at rs = 1). Further, we have extended our study to the fully spin-polarized phase. Again, with the exception of high density region, we find a good agreement of Eint with the RPIMC data. This points to the need of settling the problem of finite-size correction in the spin-polarized phase also. Interestingly, we also find that the thermal effects tend to oppose spatial localization as well as spin polarization of electrons. Supplementary material in the form of one zip file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-70532-y

  9. Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Ritz, Elvira

    2009-06-04

    At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

  10. GHz measurements of correlated electron systems in high magnetic fields

    CERN Document Server

    Edwards, R S

    2002-01-01

    This Thesis presents experiments performed on the high-frequency conductivity of materials in high magnetic fields. The angle dependence of resonances measured in the millimetre-wave absorption is studied using a rotating resonant cavity system, and the frequency dependence is measured using transmission techniques and a tuneable resonant cavity. Chapter 1 introduces the materials. These include the crystalline organic metals, the layered superconductor Sr sub 2 RUO sub 4 and the quantum Ising ferromagnet LiHoF sub 4. In Chapters 2 and 3, the necessary physics and experimental techniques for their investigation are outlined. Chapters 4 to 6 present measurements of cyclotron resonance in layered materials. Chapter 4 describes several models for the origin of cyclotron resonance harmonics, and describes the first definite measurement of the harmonics of a cyclotron resonance in an organic molecular metal, namely beta sup - (BEDT-TTF) sub 2 SF sub 5 CH sub 2 CF sub 2 SO sub 3. The angle dependence of the field p...

  11. Correlation between charge transfer and exchange coupling in carbon-based magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Anh Tuan, E-mail: tuanna@hus.edu.vn [Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Ha Noi (Viet Nam); Science and Technology Department, Vietnam National University, Hanoi, 144 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Nomi, Ishikawa, 923-1292 Japan (Japan); Nguyen, Van Thanh; Nguyen, Huy Sinh [Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Ha Noi (Viet Nam); Pham, Thi Tuan Anh [Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Ha Noi (Viet Nam); Faculty of Science, College of Hai Duong, Nguyen Thi Due, Hai Duong (Viet Nam); Do, Viet Thang [Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Ha Noi (Viet Nam); Faculty of Science, Haiphong University, 171 Phan Dang Luu, Kien An, Hai Phong (Viet Nam); Dam, Hieu Chi [Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Nomi, Ishikawa, 923-1292 Japan (Japan)

    2015-10-15

    Several forms of carbon-based magnetic materials, i.e. single radicals, radical dimers, and alternating stacks of radicals and diamagnetic molecules, have been investigated using density-functional theory with dispersion correction and full geometry optimization. Our calculated results demonstrate that the C{sub 31}H{sub 15} (R{sub 4}) radical has a spin of ½. However, in its [R{sub 4}]{sub 2} dimer structure, the net spin becomes zero due to antiferromagnetic spin-exchange between radicals. To avoid antiferromagnetic spin-exchange of identical face-to-face radicals, eight alternating stacks, R{sub 4}/D{sub 2m}/R{sub 4} (with m = 3-10), were designed. Our calculated results show that charge transfer (Δn) between R{sub 4} radicals and the diamagnetic molecule D{sub 2m} occurs with a mechanism of spin exchange (J) in stacks. The more electrons that transfer from R{sub 4} to D{sub 2m}, the stronger the ferromagnetic spin-exchange in stacks. In addition, our calculated results show that Δn can be tailored by adjusting the electron affinity (E{sub a}) of D{sub 2m}. The correlation between Δn, E{sub a}, m, and J is discussed. These results give some hints for the design of new ferromagnetic carbon-based materials.

  12. Electronic and optoelectronic materials and devices inspired by nature.

    Science.gov (United States)

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  13. Electronic and optoelectronic materials and devices inspired by nature

    Science.gov (United States)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  14. Correlation of macroscopic material properties with microscopic nuclear data

    Energy Technology Data Exchange (ETDEWEB)

    Simons, R.L.

    1981-12-18

    Two primary irradiation-induced changes occur during neutron irradiation: the displacement of atoms forming crystal defects and the transmutation of atoms into either gaseous or solid products. The material scientist studying irradiation damage to material by fusion-produced neutrons is faced with several questions: Is the nature of high-energy (14-MeV) displacement damage the same as or different from that caused by fission neutrons (< 2 MeV). How do the high helium concentrations expected in a fusion environment affect the material properties. What effects do solid transmutation products have on the behavior of the irradiated materials. In the past few years, much work has been done to answer these questions. This paper reviews recent work in this area.

  15. 75 FR 59197 - Hazardous Materials: Limiting the Use of Electronic Devices by Highway

    Science.gov (United States)

    2010-09-27

    ...: Limiting the Use of Electronic Devices by Highway AGENCY: Pipeline and Hazardous Materials Safety... Materials Safety Administration (PHMSA) proposes to prohibit texting on electronic devices by drivers during... materials community to the dangers associated with the use of mobile phones and electronic devices...

  16. 76 FR 10771 - Hazardous Materials: Limiting the Use of Electronic Devices by Highway

    Science.gov (United States)

    2011-02-28

    ...: Limiting the Use of Electronic Devices by Highway AGENCY: Pipeline and Hazardous Materials Safety... materials as defined in this section. b. Section 383.5 indicates that an electronic device includes, but is... involving hazardous materials when CMV drivers are distracted by electronic devices. Accordingly, the...

  17. Electron correlation effects beyond the random phase approximation

    Science.gov (United States)

    Fan, J. D.; Malozovsky, Y. M.

    2016-04-01

    The methods that have been used to deal with a many-particle system can be basically sorted into three types: Hamiltonian, field theory and phenomenological method. The first two methods are more popular. Traditionally, the Hamiltonian method has been widely adopted in the conventional electronic theory for metals, alloys and semiconductors. Basically, the mean-field approximation (MFA) that has been working well for a weakly coupled system like a metal is employed to simplify a Hamiltonian corresponding to a particular electron system. However, for a strongly coupled many-particle system like a cuprate superconductor MFA should in principle not apply. Therefore, the field theory on the basis of Green’s function and the Feynman diagrams must be invoked. In this method, one is however more familiar with the random phase approximation (RPA) that gives rise to the same results as MFA because of being short of the information for higher-order terms of interaction. For a strongly coupled electron system, it is obvious that one has to deal with higher-order terms of a pair interaction to get a correct solution. Any ignorance of the higher-order terms implies that the more sophisticated information contained in those terms is discarded. However, to date one has not reached a consensus on how to deal with the higher-order terms beyond RPA. We preset here a method that is termed the diagrammatic iteration approach (DIA) and able to derive higher-order terms of the interaction from the information of lower-order ones on the basis of Feynman diagram, with which one is able to go beyond RPA step by step. It is in principle possible that all of higher-order terms can be obtained, and then sorted to groups of diagrams. It turns out that each of the groups can be replaced by an equivalent one, forming a diagrammatic Dyson-equation-like relation. The diagrammatic solution is eventually “translated” to a four-dimensional integral equation. The method can be applied to a

  18. Correlative scanning electron and confocal microscopy imaging of labeled cells coated by indium-tin-oxide

    KAUST Repository

    Rodighiero, Simona

    2015-03-22

    Confocal microscopy imaging of cells allows to visualize the presence of specific antigens by using fluorescent tags or fluorescent proteins, with resolution of few hundreds of nanometers, providing their localization in a large field-of-view and the understanding of their cellular function. Conversely, in scanning electron microscopy (SEM), the surface morphology of cells is imaged down to nanometer scale using secondary electrons. Combining both imaging techniques have brought to the correlative light and electron microscopy, contributing to investigate the existing relationships between biological surface structures and functions. Furthermore, in SEM, backscattered electrons (BSE) can image local compositional differences, like those due to nanosized gold particles labeling cellular surface antigens. To perform SEM imaging of cells, they could be grown on conducting substrates, but obtaining images of limited quality. Alternatively, they could be rendered electrically conductive, coating them with a thin metal layer. However, when BSE are collected to detect gold-labeled surface antigens, heavy metals cannot be used as coating material, as they would mask the BSE signal produced by the markers. Cell surface could be then coated with a thin layer of chromium, but this results in a loss of conductivity due to the fast chromium oxidation, if the samples come in contact with air. In order to overcome these major limitations, a thin layer of indium-tin-oxide was deposited by ion-sputtering on gold-decorated HeLa cells and neurons. Indium-tin-oxide was able to provide stable electrical conductivity and preservation of the BSE signal coming from the gold-conjugated markers. © 2015 Wiley Periodicals, Inc.

  19. Correlative scanning electron and confocal microscopy imaging of labeled cells coated by indium-tin-oxide.

    Science.gov (United States)

    Rodighiero, Simona; Torre, Bruno; Sogne, Elisa; Ruffilli, Roberta; Cagnoli, Cinzia; Francolini, Maura; Di Fabrizio, Enzo; Falqui, Andrea

    2015-06-01

    Confocal microscopy imaging of cells allows to visualize the presence of specific antigens by using fluorescent tags or fluorescent proteins, with resolution of few hundreds of nanometers, providing their localization in a large field-of-view and the understanding of their cellular function. Conversely, in scanning electron microscopy (SEM), the surface morphology of cells is imaged down to nanometer scale using secondary electrons. Combining both imaging techniques have brought to the correlative light and electron microscopy, contributing to investigate the existing relationships between biological surface structures and functions. Furthermore, in SEM, backscattered electrons (BSE) can image local compositional differences, like those due to nanosized gold particles labeling cellular surface antigens. To perform SEM imaging of cells, they could be grown on conducting substrates, but obtaining images of limited quality. Alternatively, they could be rendered electrically conductive, coating them with a thin metal layer. However, when BSE are collected to detect gold-labeled surface antigens, heavy metals cannot be used as coating material, as they would mask the BSE signal produced by the markers. Cell surface could be then coated with a thin layer of chromium, but this results in a loss of conductivity due to the fast chromium oxidation, if the samples come in contact with air. In order to overcome these major limitations, a thin layer of indium-tin-oxide was deposited by ion-sputtering on gold-decorated HeLa cells and neurons. Indium-tin-oxide was able to provide stable electrical conductivity and preservation of the BSE signal coming from the gold-conjugated markers.

  20. Cooling of mobile electronic devices using phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Tan, F.L.; Tso, C.P. [Nanyang Technological University (Singapore). School of Mechanical and Production Engineering

    2004-02-01

    An experimental study is conducted on the cooling of mobile electronic devices, such as personal digital assistants (PDAs) and wearable computers, using a heat storage unit (HSU) filled with the phase change material (PCM) of n-eicosane inside the device. The high latent heat of n-eicosane in the HSU absorbs the heat dissipation from the chips and can maintain the chip temperature below the allowable service temperature of 50{sup o}C for 2 h of transient operations of the PDA. The heat dissipation of the chips inside a PDA and the orientation of the HSU are experimentally investigated in this paper. It was found that different orientation of the HSU inside the PDA could affect significantly the temperature distribution. (author)

  1. [Shaping of electron radiation fields using homogeneous absorbent materials].

    Science.gov (United States)

    Eichhorn, M; Reis, A; Kraft, M

    1990-01-01

    Proof of shielding and forming by absorbers was done in water phantom dosimetrically. Alterations of isodose course were measured in dependence of primary energy, as well as of thickness and density of the absorber materials. Piacryl or aluminium are not suitable for forming of irregular electron fields. They only effect a reduction of therapeutic range. For primary energies of 10.0 less than or equal to MeV less than or equal to E0- less than or equal to 20.0 MeV lead rubber and wood metal are to recommended in a thickness of less than or equal to 10 mm or less than or equal to 8 mm respectively.

  2. Holographic description of strongly correlated electrons in external magnetic fields

    CERN Document Server

    Gubankova, E; Cubrovic, M; Schalm, K; Schijven, P; Zaanen, J

    2013-01-01

    We study the Fermi level structure of (2+1)-dimensional strongly interacting electron systems in external magnetic field using the AdS/CFT correspondence. The gravity dual of a finite density fermion system is a Dirac field in the background of the dyonic AdS-Reissner-Nordstrom black hole. In the probe limit the magnetic system can be reduced to the non-magnetic one, with Landau-quantized momenta and rescaled thermodynamical variables. We find that at strong enough magnetic fields, the Fermi surface vanishes and the quasiparticle is lost either through a crossover to conformal regime or through a phase transition to an unstable Fermi surface. In the latter case, the vanishing Fermi velocity at the critical magnetic field triggers the non-Fermi liquid regime with unstable quasiparticles and a change in transport properties of the system. We associate it with a metal-"strange metal" phase transition. We compute the DC Hall and longitudinal conductivities using the gravity-dressed fermion propagators. As expecte...

  3. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices

    Science.gov (United States)

    Chen, Duan; Wei, Guo-Wei

    2010-01-01

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  4. Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

    Science.gov (United States)

    Chen, Duan; Wei, Guo-Wei

    2010-06-01

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano-scale. By optimization of the energy functional, we derive consistently coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano-transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano-electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I- V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical

  5. Quantum Monte Carlo Assessment of the Relevance of Electronic Correlations in Defects and EOS in Metals

    Energy Technology Data Exchange (ETDEWEB)

    Hood, R Q; Williamson, A J; Dubois, J L; Reboredo, F A

    2008-02-07

    We have developed a highly accurate computational capability to calculate the equation of state (EOS) and defect formation energies of metallic systems. We are using a newly developed algorithm that enables the study of metallic systems with quantum Monte Carlo (QMC) methods. To date, technical limitations have restricted the application of QMC methods to semiconductors, insulators and the homogeneous electron gas. Using this new 'QMC for metals' we can determine, for the first time, the significance of correlation effects in the EOS and in the formation energies of point defects, impurities, surfaces and interfaces in metallic systems. These calculations go beyond the state-of-the-art accuracy which is currently obtained with Density Functional Theory approaches. Such benchmark calculations can provide more accurate predictions for the EOS and the formation energies of vacancies and interstitials in simple metals. These are important parameters in determining the mechanical properties as well as the micro-structural evolution of metals in irradiated materials or under extreme conditions. We describe the development of our 'QMC for metals' code, which has been adapted to run efficiently on a variety of computer architectures including BG/L. We present results of the first accurate quantum Monte Carlo calculation of an EOS of a realistic metallic system that goes beyond the homogeneous electron gas.

  6. Evolution of electronic correlations across the rutile, perovskite, and Ruddelsden-Popper iridates with octahedral connectivity

    Science.gov (United States)

    Kawasaki, Jason K.; Uchida, Masaki; Paik, Hanjong; Schlom, Darrell G.; Shen, Kyle M.

    2016-09-01

    The confluence of electron correlations and spin-orbit interactions is critical to realizing quantum phases in 5 d transition metal oxides. Here, we investigate how the strength of the effective electron correlations evolve across a series of d5 iridates comprised of IrO6 octahedra, ranging from the layered correlated insulator Sr2IrO4 , to the three-dimensional perovskite semimetal SrIrO3, to metallic rutile IrO2 in which the octahedra are arranged in a mixed edge and corner sharing network. Through a combination of reactive oxide molecular-beam epitaxy, in situ angle-resolved photoemission spectroscopy, core level photoemission, and density functional theory, we show how the effective electron correlations weaken as a function of increasing connectivity of the IrO6 network and p -d hybridization. Our results demonstrate how structure and connectivity can be used to control the strength of correlations in the iridates.

  7. Pyroelectric materials as electronic pulse detectors of ultraheavy nuclei

    Science.gov (United States)

    Simpson, J. A.; Tuzzolino, A. J.

    1984-01-01

    The design and testing of ultraheavy-nucleus pulse detectors based on pyroelectric materials are reported, extending the preliminary findings of Tuzzolino (1983) and Simpson and Tuzzolino (1983). Uranium-ion beams of about 240 MeV/u are detected by a 39.5-micron-thick Si detector, degraded to about 175 MeV/u by Al absorbers, and then strike 700-micron-thick polyvinylidene fluoride or 1000-micron-thick LiTaO3 pyroelectric samples. Both detector systems are connected to a coincidence circuit via charge-sensitive preamplifiers, shaping amplifiers with 30-microsec effective time constants, and electronic discriminators. Sample spectra are shown, and the pulse heights measured are found to agree with theoretical calculations to within a factor of about 2. The response of the pyroelectric materials is found to be unaffected by exposure to about 10 Mrad of 2-7-MeV/u heavy ion radiation. With further study and improvement of the detection sensitivity, devices of this type could be applied to large-area space measurements of low ultraheavy-ion fluxes.

  8. Multiscale modelling of charge transport in organic electronic materials

    Science.gov (United States)

    Nelson, Jenny

    2010-03-01

    Charge transport in disordered organic semiconductors is controlled by a complex combination of phenomena that span a range of length and time scales. As a result, it is difficult to rationalize charge transport properties in terms of material parameters. Until now, efforts to improve charge mobilities in molecular semiconductors have proceeded largely by trial and error rather than through systematic design. However, recent developments have enabled the first predictive simulation studies of charge transport in disordered organic semiconductors. In this presentation we will show how a set of computational methods, namely molecular modelling methods to simulate molecular packing, quantum chemical calculations of charge transfer rates, and Monte Carlo simulations of charge transport can be used to reproduce experimental charge mobilities with few or no fitting parameters. Using case studies, we will show how such simulations can explain the relative values of electron and hole mobility and the effects of grain size, side chains and polymer molecular weight on charge mobility. Although currently applied to material systems of relatively high symmetry or well defined structure, this approach can be developed to address more complex systems such as multicomponent solids and conjugated polymers.

  9. New Photocathode materials for electron-ion-colliders

    Energy Technology Data Exchange (ETDEWEB)

    Lukaszew, Rosa A. [College of William and Mary, Williamsburg, VA (United States)

    2015-02-25

    Our aim has been to explore new photocathode materials and schemes to develop strategies and technologies for next generation nuclear physics accelerator capabilities, particularly for Electron Ion Colliders (EIC). Thus, we investigated thin film deposition and ensuing properties for several adequate magnetic materials applicable to spin-polarized photocathodes. We also implemented a full experimental setup for light incidence at an acute angle onto the photocathode surface in order to excite surface Plasmon resonance hence increasing light absorption by a metallic surface. We successfully tested the setup with a thermionic cathode as well as Plasmonic silver-MgO samples and obtained very encouraging results. Our first results are very encouraging since the photocurrent measured on this preliminary plasmonic Ag-MgO sample under low power (~ 1mW) cw red light from a HeNe laser was 256 pA, thus two orders magnitude larger than that reported by others following also plasmonic approaches. We extended our studies to shorter wavelengths and we also started preliminary work on chemically ordered MnAl thin films –a component of the tertiary Ag-Mn-Al (silmanal) alloy in order to develop spin-polarized photocathodes capable of sustaining surface Plasmon resonance. It is worthwhile mentioning that a graduate student has been directly involved during this project ensuring the training of next generation of scientists in this area of research.

  10. Correlated electronic states of SrVO{sub 3} revealed by angle-resolved photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, T. [Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Kobayashi, M. [KEK, Photon Factory, Tsukuba 305-0801, Ibaraki (Japan); Yoshimatsu, K. [KEK, Photon Factory, Tsukuba 305-0801, Ibaraki (Japan); Department of Physics, The University of Tokyo, Tokyo 113-0033 (Japan); Kumigashira, H. [KEK, Photon Factory, Tsukuba 305-0801, Ibaraki (Japan); Fujimori, A. [Department of Physics, The University of Tokyo, Tokyo 113-0033 (Japan)

    2016-04-15

    In this article, we review recent progress in angle-resolved photoemission (ARPES) studies of the Mott-Hubbard-type correlated electron systems SrVO{sub 3}. It has the d{sup 1} electron configuration and is an ideal model compound to study electron correlation effects in normal metal. ARPES studies of bulk single-crystal SrVO{sub 3} and CaVO{sub 3} have revealed the difference in the mass renormalization of electrons between them. In-situ ARPES studies of thin films fabricated by the pulsed laser deposition method have clarified not only quasi-particle dispersions, which show a kink like high-T{sub c} cuprates, but also finite dispersions in the incoherent part. Self-energy in a wide energy range has been deduced from the ARPES spectral weight using Kramers–Kronig transformation. The obtained self-energy has several structures which yield the incoherent feature and a pseudogap-like dip similar to the high-T{sub c} cuprates. Quantum-well states in ultrathin films of SrVO{sub 3} have revealed sub-bands with correlated electrons. These findings of electron correlation effects outlined in the present article would provide a starting point not only for fundamental condensed-matter physics but also for the development of new devices with correlated electrons.

  11. Discussion on the interrelationship between structural, optical, electronic and elastic properties of materials

    Energy Technology Data Exchange (ETDEWEB)

    Aly, Kamal A., E-mail: kamalaly200@gmail.com

    2015-05-05

    Highlights: • The calculated values of bulk modulus in Reddy et al. [1] are now recalculated correctly. • Eq. (11) suggested by Reddy et al. [1] is not suitable to calculate the bulk modulus, B, for any element or material. • Eq. (12) in Ref. [1] is suitable to calculate, B, for all elements and materials except the underlined materials in Table 4. • All values of the electronic polarizability have been recalculated by different methods. • The bulk modulus, B, and microhardness parameter, H are different; Eq. (8) gives the relation between B and H. - Abstract: In reference Reddy et al. (2009) the correlations between energy gap, optical electronegativity and electronic polarizability for different materials have been studied. The authors of this paper (Reddy et al., 2009) aimed to make extinction or complete some previous works (Bahadur and Mishra, 2013; Reddy et al., 1999, 2000, 1998, 2005, 2008; Reddy and Nazeer Ahammed, 1996; Oshcherin, 1979; Neumann, 1983, 1987; Deus and Schneider; 1985; Deus et al., 1983; Kumar et al. 1992). However, this paper (Reddy et al., 2009) contains many fundamental errors in the calculation of bulk modulus, especially Tables 4–6. As a result, all the obtained values of the bulk modulus and consequently the electronic polarizability are incorrect. Moreover in Table 4 (Reddy et al., 2009), the bulk modulus of II−VI group semiconductors have been calculated by substituting the values of the band gap, E{sub g}, into Eq. (11) (B = 14.91 E{sub g} + 23.3). The obtained values of B using Eq. (11) are conflicted with that calculated values of B based on the electronegativity and the published previously data. Therefore Eq. (11) in reference Reddy et al. (2009) is not suitable for calculating the values of B for any element or materials. When I recalculated the values of B for all materials in Tables 1 and 4–6 in paper (Reddy et al., 2009) using Eq. (12), I found that, Eq. (12) gives acceptable values of B for all materials

  12. Spatial correlations of the spontaneous decay rate as a probe of dense and correlated disordered materials

    CERN Document Server

    Leseur, Olivier; Carminati, Rémi

    2016-01-01

    We study theoretically and numerically a new kind of spatial correlation for waves in disordered media. We define $C_{\\Gamma}$ as the correlation function of the fluorescent decay rate of an emitter at two different positions inside the medium. We show that the amplitude and the width of $C_{\\Gamma}$ provide decoupled information on the structural correlation of the disordered medium and on the local environment of the emitter. This result may stimulate the emergence of new imaging and sensing modalities in complex media.

  13. High-precision correlative fluorescence and electron cryo microscopy using two independent alignment markers

    Energy Technology Data Exchange (ETDEWEB)

    Schellenberger, Pascale [Oxford Particle Imaging Centre, Division of Structural Biology, Wellcome Trust Centre for Human Genetics, University of Oxford, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Kaufmann, Rainer [Oxford Particle Imaging Centre, Division of Structural Biology, Wellcome Trust Centre for Human Genetics, University of Oxford, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Department of Biochemistry, University of Oxford, South Parks Road, Oxford OX1 3QU (United Kingdom); Siebert, C. Alistair; Hagen, Christoph [Oxford Particle Imaging Centre, Division of Structural Biology, Wellcome Trust Centre for Human Genetics, University of Oxford, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Wodrich, Harald [Microbiologie Fondamentale et Pathogénicité, MFP CNRS UMR 5234, University of Bordeaux SEGALEN, 146 rue Leo Seignat, 33076 Bordeaux (France); Grünewald, Kay, E-mail: kay@strubi.ox.ac.uk [Oxford Particle Imaging Centre, Division of Structural Biology, Wellcome Trust Centre for Human Genetics, University of Oxford, Roosevelt Drive, Oxford OX3 7BN (United Kingdom)

    2014-08-01

    Correlative light and electron microscopy (CLEM) is an emerging technique which combines functional information provided by fluorescence microscopy (FM) with the high-resolution structural information of electron microscopy (EM). So far, correlative cryo microscopy of frozen-hydrated samples has not reached better than micrometre range accuracy. Here, a method is presented that enables the correlation between fluorescently tagged proteins and electron cryo tomography (cryoET) data with nanometre range precision. Specifically, thin areas of vitrified whole cells are examined by correlative fluorescence cryo microscopy (cryoFM) and cryoET. Novel aspects of the presented cryoCLEM workflow not only include the implementation of two independent electron dense fluorescent markers to improve the precision of the alignment, but also the ability of obtaining an estimate of the correlation accuracy for each individual object of interest. The correlative workflow from plunge-freezing to cryoET is detailed step-by-step for the example of locating fluorescence-labelled adenovirus particles trafficking inside a cell. - Highlights: • Vitrified mammalian cell were imaged by fluorescence and electron cryo microscopy. • TetraSpeck fluorescence markers were added to correct shifts between cryo fluorescence channels. • FluoSpheres fiducials were used as reference points to assign new coordinates to cryoEM images. • Adenovirus particles were localised with an average correlation precision of 63 nm.

  14. Density matrix renormalization group with efficient dynamical electron correlation through range separation

    Energy Technology Data Exchange (ETDEWEB)

    Hedegård, Erik Donovan, E-mail: erik.hedegard@phys.chem.ethz.ch; Knecht, Stefan; Reiher, Markus, E-mail: markus.reiher@phys.chem.ethz.ch [Laboratorium für Physikalische Chemie, ETH Zürich, Vladimir-Prelog-Weg 2, CH-8093 Zürich (Switzerland); Kielberg, Jesper Skau; Jensen, Hans Jørgen Aagaard, E-mail: hjj@sdu.dk [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, Campusvej 55, Odense (Denmark)

    2015-06-14

    We present a new hybrid multiconfigurational method based on the concept of range-separation that combines the density matrix renormalization group approach with density functional theory. This new method is designed for the simultaneous description of dynamical and static electron-correlation effects in multiconfigurational electronic structure problems.

  15. Description of correlated densities for few-electron atoms by simple functional forms

    Energy Technology Data Exchange (ETDEWEB)

    Porras, I.; Arias de Saavedra, F. [Univ. de Granada (Spain). Dept. de Fisica Moderna

    1999-02-20

    Simple analytical functional forms for the electron density of two- and three-electron atoms which reproduce fairly the correlated (exact) values are presented. The procedure is based on the fitting of an auxiliary f(r) function which has adequate properties for this purpose and can be extended to more complex atoms.

  16. Controlling helicity-correlated beam asymmetries in a polarized electron source

    Energy Technology Data Exchange (ETDEWEB)

    Kent Paschke

    2007-07-01

    The control of helicity-correlated changes in the electron beam is a critical issue for the next generation of parity-violating electron scattering measurements. The underlying causes and methods for controlling these changes are reviewed with reference to recent operational experience at Jefferson Lab.

  17. Density Matrix Renormalization Group with Efficient Dynamical Electron Correlation Through Range Separation

    CERN Document Server

    Hedegård, Erik Donovan; Kielberg, Jesper Skau; Jensen, Hans Jørgen Aagaard; Reiher, Markus

    2015-01-01

    We present a new hybrid multiconfigurational method based on the concept of range-separation that combines the density matrix renormalization group approach with density functional theory. This new method is designed for the simultaneous description of dynamical and static electron-correlation effects in multiconfigurational electronic structure problems.

  18. Communication: Simple and accurate uniform electron gas correlation energy for the full range of densities

    Science.gov (United States)

    Chachiyo, Teepanis

    2016-07-01

    A simple correlation energy functional for the uniform electron gas is derived based on the second-order Moller-Plesset perturbation theory. It can reproduce the known correlation functional in the high-density limit, while in the mid-density range maintaining a good agreement with the near-exact correlation energy of the uniform electron gas to within 2 × 10-3 hartree. The correlation energy is a function of a density parameter rs and is of the form a * ln ( 1 + /b r s + /b rs 2 ) . The constants "a" and "b" are derived from the known correlation functional in the high-density limit. Comparisons to the Ceperley-Alder's near-exact Quantum Monte Carlo results and the Vosko-Wilk-Nusair correlation functional are also reported.

  19. Correlating Inertial Acoustic Cavitation Emissions with Material Erosion Resistance

    Science.gov (United States)

    Ibanez, I.; Hodnett, M.; Zeqiri, B.; Frota, M. N.

    The standard ASTM G32-10 concerns the hydrodynamic cavitation erosion resistance of materials by subjecting them to acoustic cavitation generated by a sonotrode. The work reported extends this technique by detecting and monitoring the ultrasonic cavitation, considered responsible for the erosion process, specifically for coupons of aluminium-bronze alloy. The study uses a 65 mm diameter variant of NPL's cavitation sensor, which detects broadband acoustic emissions, and logs acoustic signals generated in the MHz frequency range, using NPL's Cavimeter. Cavitation readings were made throughout the exposure duration, which was carried out at discrete intervals (900 to 3600 s), allowing periodic mass measurements to be made to assess erosion loss under a strict protocol. Cavitation measurements and erosion were compared for different separations of the sonotrode tip from the material under test. The maximum variation associated with measurement of cavitation level was between 2.2% and 3.3% when the separation (λ) between the transducer horn and the specimen increased from 0.5 to 1.0 mm, for a transducer (sonotrode) displacement amplitude of 43.5 μm. Experiments conducted at the same transducer displacement amplitude show that the mass loss of the specimen -a measure of erosion- was 67.0 mg (λ = 0.5 mm) and 66.0 mg (λ = 1.0 mm).

  20. First-principles Theory of the Momentum-dependent Local Ansatz for Correlated Electron System

    Science.gov (United States)

    Chandra, Sumal; Kakehashi, Yoshiro

    The momentum-dependent local-ansatz (MLA) wavefunction describes well correlated electrons in solids in both the weak and strong interaction regimes. In order to apply the theory to the realistic system, we have extended the MLA to the first-principles version using the tight-binding LDA+U Hamiltonian. We demonstrate for the paramagnetic Fe that the first-principles MLA can describe a reasonable correlation energy gain and suppression of charge fluctuations due to electron correlations. Furthermore, we show that the MLA yields a distinct momentum dependence of the momentum distribution, and thus improves the Gutzwiller wavefunction.

  1. Graphene-enabled electron microscopy and correlated super-resolution microscopy of wet cells.

    Science.gov (United States)

    Wojcik, Michal; Hauser, Margaret; Li, Wan; Moon, Seonah; Xu, Ke

    2015-06-11

    The application of electron microscopy to hydrated biological samples has been limited by high-vacuum operating conditions. Traditional methods utilize harsh and laborious sample dehydration procedures, often leading to structural artefacts and creating difficulties for correlating results with high-resolution fluorescence microscopy. Here, we utilize graphene, a single-atom-thick carbon meshwork, as the thinnest possible impermeable and conductive membrane to protect animal cells from vacuum, thus enabling high-resolution electron microscopy of wet and untreated whole cells with exceptional ease. Our approach further allows for facile correlative super-resolution and electron microscopy of wet cells directly on the culturing substrate. In particular, individual cytoskeletal actin filaments are resolved in hydrated samples through electron microscopy and well correlated with super-resolution results.

  2. Material Property Correlations: Comparisons between FRAPCON-3.4, FRAPTRAN 1.4, and MATPRO

    Energy Technology Data Exchange (ETDEWEB)

    Luscher, Walter G.; Geelhood, Kenneth J.

    2010-08-01

    The U.S. Nuclear Regulatory Commission (NRC) uses the computer codes FRAPCON-3 and FRAPTRAN to model steady state and transient fuel behavior, respectively, in regulatory analysis. In order to effectively model fuel behavior, material property correlations must be used for a wide range of operating conditions (e.g. temperature and burnup). In this sense, a 'material property' is a physical characteristic of the material whose quantitative value is necessary in the analysis process. Further, the property may be used to compare the benefits of one material versus another. Generally speaking, the material properties of interest in regulatory analysis of nuclear fuel behavior are mechanical or thermodynamic in nature. The issue of what is and is not a 'material property' will never be universally resolved. In this report, properties such as thermal conductivity are included. Other characteristics of the material (e.g. fission gas release) are considered 'models' rather than properties, and are discussed elsewhere. Still others (e.g., neutron absorption cross-section) are simply not required in this specific analysis. The material property correlations for the FRAPCON-3 and FRAPTRAN computer codes were documented in NUREG/CR-6534 and NUREG/CR-6739, respectively. Some of these have been modified or updated since the original code documentation was published. The primary purpose of this report is to consolidate the current material property correlations used in FRAPCON-3 and FRAPTRAN into a single document. Material property correlations for oxide fuels, including uranium dioxide (UO2) and mixed oxide (MOX) fuels, are described in Section 2. Throughout this document, the term MOX will be used to describe fuels that are blends of uranium and plutonium oxides, (U,Pu)O2. The properties for uranium dioxide with other additives (e.g., gadolinia) are also discussed. Material property correlations for cladding materials and gases are described in

  3. Correlated cryo-fluorescence and cryo-electron microscopy with high spatial precision and improved sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Schorb, Martin [Structural and Computational Biology Unit, European Molecular Biology Laboratory, D-69117 Heidelberg (Germany); Briggs, John A.G., E-mail: john.briggs@embl.de [Structural and Computational Biology Unit, European Molecular Biology Laboratory, D-69117 Heidelberg (Germany); Cell Biology and Biophysics Unit, European Molecular Biology Laboratory, D-69117 Heidelberg (Germany)

    2014-08-01

    Performing fluorescence microscopy and electron microscopy on the same sample allows fluorescent signals to be used to identify and locate features of interest for subsequent imaging by electron microscopy. To carry out such correlative microscopy on vitrified samples appropriate for structural cryo-electron microscopy it is necessary to perform fluorescence microscopy at liquid-nitrogen temperatures. Here we describe an adaptation of a cryo-light microscopy stage to permit use of high-numerical aperture objectives. This allows high-sensitivity and high-resolution fluorescence microscopy of vitrified samples. We describe and apply a correlative cryo-fluorescence and cryo-electron microscopy workflow together with a fiducial bead-based image correlation procedure. This procedure allows us to locate fluorescent bacteriophages in cryo-electron microscopy images with an accuracy on the order of 50 nm, based on their fluorescent signal. It will allow the user to precisely and unambiguously identify and locate objects and events for subsequent high-resolution structural study, based on fluorescent signals. - Highlights: • Workflow for correlated cryo-fluorescence and cryo-electron microscopy. • Cryo-fluorescence microscopy setup incorporating a high numerical aperture objective. • Fluorescent signals located in cryo-electron micrographs with 50 nm spatial precision.

  4. Experimental electronic structure and Fermi-surface instability of the correlated 3d sulphide BaVS3 : High-resolution angle-resolved photoemission spectroscopy

    Science.gov (United States)

    Mitrovic, S.; Fazekas, P.; Søndergaard, C.; Ariosa, D.; Barišić, N.; Berger, H.; Cloëtta, D.; Forró, L.; Höchst, H.; Kupčić, I.; Pavuna, D.; Margaritondo, G.

    2007-04-01

    The correlated 3d sulphide BaVS3 exhibits an interesting coexistence of one-dimensional and three-dimensional properties. Our experiments determine the electronic band structure and shed light on this puzzle. High-resolution angle-resolved photoemission measurements in a 4-eV -wide range below the Fermi energy level uncover and investigate the coexistence of a1g wide-band and eg narrow-band d electrons, which lead to the complicated electronic properties of this material. We explore the effects of strong correlations and the Fermi surface instability associated with the metal-insulator transition.

  5. Correlation effects on the energy spectra of quantum dot electrons with harmonic model interactions

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The low-lying excitation energy spectra of two, three and five quantum dot electrons with harmonic model interactions in a large magnetic field are calculated by the Hartree-Fock(HF) methods. Correlation effects on the energy level structures are investigated by comparing the HF results with the exact ones. It is found that the pure collective excitations(center-of-mass mode quanta) existing in the exact energy spectra do not appear in the HF energy spectra. The degeneracies of energy levels are also related to the correlation interactions, especially in the energy spectrum of two electrons. In the cases of more than two electrons, as the electron-electron interaction strength is increased the HF energy levels exhibit more complex crossings than the exact ones.

  6. Electronic transport in amorphous phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Luckas, Jennifer Maria

    2012-09-14

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a

  7. A perturbed angular correlation spectrometer for material science studies

    Indian Academy of Sciences (India)

    C C Dey

    2008-05-01

    A four-detector perturbed angular correlation (PAC) spectrometer has been developed with ultra-fast BaF2 detectors to acquire four coincidence spectra simultaneously, two at 180° and two at 90°. This spectrometer has double efficiency compared to that of a three-detector set-up. Higher efficiency is desirable for PAC studies in solid state physics where large number of coincidences are required to obtain the PAC spectra with good statistics and is particularly useful when the half-lives of the parent probe nuclei used for PAC measurements are ∼ 2-3 days or less as in 111In (2.8 d), 99Mo (2.7 d) and 140La (1.7 d). The performance of the spectrometer has been tested for the HfO2 monoclinic crystal in the temperature range from 77 to 873 K and for the HfF4.3H2O crystal at room temperature. The polycrystalline HfO2 has been synthesized from Hf metal by heating in air. The hydrated hafnium fluoride has been crystallized by dissolving Hf metal in 40% HF and drying slowly at room temperature.

  8. Enhanced coherent emission of terahertz radiation by energy-phase correlation in a bunched electron beam.

    Science.gov (United States)

    Doria, A; Gallerano, G P; Giovenale, E; Messina, G; Spassovsky, I

    2004-12-31

    We report the first observation of enhanced coherent emission of terahertz radiation in a compact free electron laser. A radio-frequency (rf) modulated electron beam is passed through a magnetic undulator emitting coherent radiation at harmonics of the rf with a phase which depends on the electron drift velocity. A proper correlation between the energy and phase distributions of the electrons in the bunch has been exploited to lock in phase the radiated field, resulting in over 1 order of magnitude enhancement of the coherent emission.

  9. Optical properties of correlated materials: Generalized Peierls approach and its application to VO2

    Science.gov (United States)

    Tomczak, Jan M.; Biermann, Silke

    2009-08-01

    The aim of this paper is to present a versatile scheme for the computation of optical properties of solids, with particular emphasis on realistic many-body calculations for correlated materials. Geared at the use with localized basis sets, we extend the commonly known lattice “Peierls substitution” approach to the case of multiatomic unit cells. We show in how far this generalization can be deployed as an approximation to the full Fermi-velocity matrix elements that enter the continuum description of the response of a solid to incident light. We further devise an upfolding scheme to incorporate optical transitions that involve high-energy orbitals that had been downfolded in the underlying many-body calculation of the electronic structure. As an application of the scheme, we present results on a material of longstanding interest, vanadium dioxide, VO2 . Using dynamical mean-field data of both, the metallic and the insulating phase, we calculate the corresponding optical conductivities, elucidate optical transitions and find good agreement with experimental results.

  10. Using advanced electron microscopy for the characterization of catalytic materials

    Science.gov (United States)

    Pyrz, William D.

    Catalysis will continue to be vitally important to the advancement and sustainability of industrialized societies. Unfortunately, the petroleum-based resources that currently fuel the energy and consumer product needs of an advancing society are becoming increasingly difficult and expensive to extract as supplies diminish and the quality of sources degrade. Therefore, the development of sustainable energy sources and the improvement of the carbon efficiency of existing chemical processes are critical. Further challenges require that these initiatives are accomplished in an environmentally friendly fashion since the effects of carbon-based emissions are proving to be a serious threat to global climate stability. In this dissertation, materials being developed for sustainable energy and process improvement initiatives are studied. Our approach is to use materials characterization, namely advanced electron microscopy, to analyze the targeted systems at the nano- or Angstrom-scale with the goal of developing useful relationships between structure, composition, crystalline order, morphology, and catalytic performance. One area of interest is the complex Mo-V-M-O (M=Te, Sb, Ta, Nb) oxide system currently being developed for the selective oxidation/ammoxidation of propane to acrylic acid or acrylonitrile, respectively. Currently, the production of acrylic acid and acrylonitrile rely on propylene-based processes, yet significant cost savings could be realized if the olefin-based feeds could be replaced by paraffin-based ones. The major challenge preventing this feedstock replacement is the development of a suitable paraffin-activating catalyst. Currently, the best candidate is the Mo-V-Nb-Te-O complex oxide catalyst that is composed of two majority phases that are commonly referred to as M1 and M2. However, there is a limited understanding of the roles of each component with respect to how they contribute to catalyst stability and the reaction mechanism. Aberration

  11. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    Science.gov (United States)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  12. Electron beam treatment of non-conducting materials by a fore-pump-pressure plasma-cathode electron beam source

    Energy Technology Data Exchange (ETDEWEB)

    Burdovitsin, V A; Klimov, A S; Medovnik, A V; Oks, E M, E-mail: burdov@fet.tusur.r [Tomsk State University of Control Systems and Radioelectronics, 634050, 40 Lenin Ave., Tomsk (Russian Federation)

    2010-10-15

    In the irradiation of an insulated target by an electron beam produced by a plasma-cathode electron beam source operating in the fore-vacuum pressure range (5-15 Pa), the target potential is much lower than the electron beam energy, offering the possibility of direct electron treatment of insulating materials. It is found that in the electron beam irradiation of a non-conducting target in a moderately high pressure range, the electron charge on the target surface is neutralized mainly by ions from a volume discharge established between the negatively charged target surface and the grounded walls of the vacuum chamber. This allows the possibility of direct electron beam treatment (heating, melting, welding) of ceramics and other non-conducting and semiconductor materials.

  13. Analysis of two-orbital correlations in wave functions restricted to electron-pair states

    Science.gov (United States)

    Boguslawski, Katharina; Tecmer, Paweł; Legeza, Örs

    2016-10-01

    Wave functions constructed from electron-pair states can accurately model strong electron correlation effects and are promising approaches especially for larger many-body systems. In this article, we analyze the nature and the type of electron correlation effects that can be captured by wave functions restricted to electron-pair states. We focus on the pair-coupled-cluster doubles (pCCD) ansatz also called the antisymmetric product of the 1-reference orbital geminal (AP1roG) method, combined with an orbital optimization protocol presented in Boguslawski et al. [Phys. Rev. B 89, 201106(R) (2014)], 10.1103/PhysRevB.89.201106, whose performance is assessed against electronic structures obtained form density-matrix renormalization-group reference data. Our numerical analysis covers model systems for strong correlation: the one-dimensional Hubbard model with a periodic boundary condition as well as metallic and molecular hydrogen rings. Specifically, the accuracy of pCCD/AP1roG is benchmarked using the single-orbital entropy, the orbital-pair mutual information, as well as the eigenvalue spectrum of the one-orbital and two-orbital reduced density matrices. Our study indicates that contributions from singly occupied states become important in the strong correlation regime which highlights the limitations of the pCCD/AP1roG method. Furthermore, we examine the effect of orbital rotations within the pCCD/AP1roG model on correlations between orbital pairs.

  14. New insights into electron spin dynamics in the presence of correlated noise.

    Science.gov (United States)

    Spezia, S; Adorno, D Persano; Pizzolato, N; Spagnolo, B

    2012-02-08

    The changes in the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which takes into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examining the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, for electric field amplitudes lower than the Gunn field, the dephasing length shortens with increasing noise intensity. Moreover, a nonmonotonic behavior of spin depolarization length with the noise correlation time is found, characterized by a maximum variation for values of noise correlation time comparable with the dephasing time. Instead, in high field conditions, we find that, critically depending on the noise correlation time, external fluctuations can positively affect the relaxation length. The influence of the inclusion of the electron-electron scattering mechanism is also shown and discussed.

  15. Correlative cryo-fluorescence light microscopy and cryo-electron tomography of Streptomyces.

    Science.gov (United States)

    Koning, Roman I; Celler, Katherine; Willemse, Joost; Bos, Erik; van Wezel, Gilles P; Koster, Abraham J

    2014-01-01

    Light microscopy and electron microscopy are complementary techniques that in a correlative approach enable identification and targeting of fluorescently labeled structures in situ for three-dimensional imaging at nanometer resolution. Correlative imaging allows electron microscopic images to be positioned in a broader temporal and spatial context. We employed cryo-correlative light and electron microscopy (cryo-CLEM), combining cryo-fluorescence light microscopy and cryo-electron tomography, on vitrified Streptomyces bacteria to study cell division. Streptomycetes are mycelial bacteria that grow as long hyphae and reproduce via sporulation. On solid media, Streptomyces subsequently form distinct aerial mycelia where cell division leads to the formation of unigenomic spores which separate and disperse to form new colonies. In liquid media, only vegetative hyphae are present divided by noncell separating crosswalls. Their multicellular life style makes them exciting model systems for the study of bacterial development and cell division. Complex intracellular structures have been visualized with transmission electron microscopy. Here, we describe the methods for cryo-CLEM that we applied for studying Streptomyces. These methods include cell growth, fluorescent labeling, cryo-fixation by vitrification, cryo-light microscopy using a Linkam cryo-stage, image overlay and relocation, cryo-electron tomography using a Titan Krios, and tomographic reconstruction. Additionally, methods for segmentation, volume rendering, and visualization of the correlative data are described.

  16. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

    Science.gov (United States)

    Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

    2016-01-01

    Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

  17. Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

    Science.gov (United States)

    Li, S. S.

    1978-01-01

    Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

  18. High-precision correlative fluorescence and electron cryo microscopy using two independent alignment markers.

    Science.gov (United States)

    Schellenberger, Pascale; Kaufmann, Rainer; Siebert, C Alistair; Hagen, Christoph; Wodrich, Harald; Grünewald, Kay

    2014-08-01

    Correlative light and electron microscopy (CLEM) is an emerging technique which combines functional information provided by fluorescence microscopy (FM) with the high-resolution structural information of electron microscopy (EM). So far, correlative cryo microscopy of frozen-hydrated samples has not reached better than micrometre range accuracy. Here, a method is presented that enables the correlation between fluorescently tagged proteins and electron cryo tomography (cryoET) data with nanometre range precision. Specifically, thin areas of vitrified whole cells are examined by correlative fluorescence cryo microscopy (cryoFM) and cryoET. Novel aspects of the presented cryoCLEM workflow not only include the implementation of two independent electron dense fluorescent markers to improve the precision of the alignment, but also the ability of obtaining an estimate of the correlation accuracy for each individual object of interest. The correlative workflow from plunge-freezing to cryoET is detailed step-by-step for the example of locating fluorescence-labelled adenovirus particles trafficking inside a cell. © 2013 Published by Elsevier B.V.

  19. Electronic transport in amorphous phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Luckas, Jennifer Maria

    2012-09-14

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a

  20. Use of a Digital Image Correlation Technique for Measuring the Material Properties of Beetle Wing

    Institute of Scientific and Technical Information of China (English)

    Tailie Jin; Nam Seo Goo; Sung-Choong Woo; Hoon Cheol Park

    2009-01-01

    Beetle wings are very specialized flight organs consisting of the veins and membranes. Therefore it is necessary from a bionic view to investigate the material properties of a beetle wing experimentally. In the present study, we have used a Digital lmage Correlation (DIC) technique to measure the elastic modulus of a beetle wing membrane. Specimens were prepared by carefully cutting a beetle hind wing into 3.0 mm by 7.0 mm segments (the gage length was 5 mm). We used a scanning electron microscope for a precise measurement of the thickness of the beetle wing membrane. The specimen was attached to a designed fixture to induce a uniform displacement by means of a micromanipulator. We used an ARAMISTM system based on the digital image correlation technique to measure the corresponding displacement of a specimen. The thickness of the beetle wing varied at different points of the membrane. The elastic modulus differed in relation to the membrane arrangement showing a structural anisotropy; the elastic modulus in the chordwise direction is approximately 2.65 GPa, which is three times larger than the elastic modulus in the spanwise direction of 0.84 GPa. As a result, the digital image correlation-based ARAMIS system was suc-cessfully used to measure the elastic modulus of a beetle wing. In addition to membrane's elastic modulus, we considered the Poisson's ratio of the membrane and measured the elastic modulus of a vein using an Instron universal tensile machine. The result reveals the Poisson's ratio is nearly zero and the elastic modulus of a vein is about 11 GPa.

  1. Materials Characterization at Utah State University: Facilities and Knowledge-base of Electronic Properties of Materials Applicable to Spacecraft Charging

    Science.gov (United States)

    Dennison, J. R.; Thomson, C. D.; Kite, J.; Zavyalov, V.; Corbridge, Jodie

    2004-01-01

    In an effort to improve the reliability and versatility of spacecraft charging models designed to assist spacecraft designers in accommodating and mitigating the harmful effects of charging on spacecraft, the NASA Space Environments and Effects (SEE) Program has funded development of facilities at Utah State University for the measurement of the electronic properties of both conducting and insulating spacecraft materials. We present here an overview of our instrumentation and capabilities, which are particularly well suited to study electron emission as related to spacecraft charging. These measurements include electron-induced secondary and backscattered yields, spectra, and angular resolved measurements as a function of incident energy, species and angle, plus investigations of ion-induced electron yields, photoelectron yields, sample charging and dielectric breakdown. Extensive surface science characterization capabilities are also available to fully characterize the samples in situ. Our measurements for a wide array of conducting and insulating spacecraft materials have been incorporated into the SEE Charge Collector Knowledge-base as a Database of Electronic Properties of Materials Applicable to Spacecraft Charging. This Database provides an extensive compilation of electronic properties, together with parameterization of these properties in a format that can be easily used with existing spacecraft charging engineering tools and with next generation plasma, charging, and radiation models. Tabulated properties in the Database include: electron-induced secondary electron yield, backscattered yield and emitted electron spectra; He, Ar and Xe ion-induced electron yields and emitted electron spectra; photoyield and solar emittance spectra; and materials characterization including reflectivity, dielectric constant, resistivity, arcing, optical microscopy images, scanning electron micrographs, scanning tunneling microscopy images, and Auger electron spectra. Further

  2. Correlated electric field and low-energy electron measurements in the low-altitude polar cusp

    Science.gov (United States)

    Kintner, P. M.; Ackerson, K. L.; Gurnett, D. A.; Frank, L. A.

    1978-01-01

    Correlated electric field and low-energy electron measurements are presented for two passes of Hawkeye 1 through the south polar cusp at 2000-km altitude during local morning. In one case the electric field reversal coincides with the boundary of detectable 5.2keV electron intensities and the equatorward boundary of the cusp. In the other case the electric field reversal and the 5.2 keV electron trapping boundary coincide, but the equatorward edge of the cusp as determined from the presence of 180 eV electron intensities is 5 degrees invariant latitude equatorward of the electric field reversal. It is concluded that in the second case, electron intensities associated with the polar cusp populate closed dayside field lines, and hence the corresponding equatorward edge of these electron intensities is not always an indicator of the boundary between closed dayside field lines and polar cap field lines.

  3. Electronic structure and correlated wave functions of a few electron quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sako, Tokuei [Laboratory of Physics, College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, Chiba 274-8501 (Japan); Ishida, Hiroshi [College of Humanities and Sciences, Nihon University, Tokyo 156-8550 (Japan); Fujikawa, Kazuo [Institute of Quantum Science, College of Science and Technology, Nihon University, Chiyoda-ku, Tokyo 101-8308 (Japan)

    2015-01-22

    The energy spectra and wave functions of a few electrons confined by a quasi-one-dimensional harmonic and anharmonic potentials have been studied by using a full configuration interaction method employing a Cartesian anisotropic Gaussian basis set. The energy spectra are classified into three regimes of the strength of confinement, namely, large, medium and small. The polyad quantum number defined by a total number of nodes in the wave functions is shown to be a key ingredient to interpret the energy spectra for the whole range of the confinement strength. The nodal pattern of the wave functions exhibits normal modes for the harmonic confining potential, indicating collective motions of electrons. These normal modes are shown to undergo a transition to local modes for an anharmonic potential with large anharmonicity.

  4. Consistent LDA' + DMFT approach to the electronic structure of transition metal oxides: Charge transfer insulators and correlated metals

    Energy Technology Data Exchange (ETDEWEB)

    Nekrasov, I. A., E-mail: nekrasov@iep.uran.ru; Pavlov, N. S.; Sadovskii, M. V. [Russian Academy of Sciences, Institute for Electrophysics, Ural Branch (Russian Federation)

    2013-04-15

    We discuss the recently proposed LDA' + DMFT approach providing a consistent parameter-free treatment of the so-called double counting problem arising within the LDA + DMFT hybrid computational method for realistic strongly correlated materials. In this approach, the local exchange-correlation portion of the electron-electron interaction is excluded from self-consistent LDA calculations for strongly correlated electronic shells, e.g., d-states of transition metal compounds. Then, the corresponding double-counting term in the LDA' + DMFT Hamiltonian is consistently set in the local Hartree (fully localized limit, FLL) form of the Hubbard model interaction term. We present the results of extensive LDA' + DMFT calculations of densities of states, spectral densities, and optical conductivity for most typical representatives of two wide classes of strongly correlated systems in the paramagnetic phase: charge transfer insulators (MnO, CoO, and NiO) and strongly correlated metals (SrVO{sub 3} and Sr{sub 2}RuO{sub 4}). It is shown that for NiO and CoO systems, the LDA' + DMFT approach qualitatively improves the conventional LDA + DMFT results with the FLL type of double counting, where CoO and NiO were obtained to be metals. Our calculations also include transition-metal 4s-states located near the Fermi level, missed in previous LDA + DMFT studies of these monoxides. General agreement with optical and the X-ray experiments is obtained. For strongly correlated metals, the LDA' + DMFT results agree well with the earlier LDA + DMFT calculations and existing experiments. However, in general, LDA' + DMFT results give better quantitative agreement with experimental data for band gap sizes and oxygen-state positions compared to the conventional LDA + DMFT method.

  5. Consistent LDA' + DMFT approach to the electronic structure of transition metal oxides: Charge transfer insulators and correlated metals

    Science.gov (United States)

    Nekrasov, I. A.; Pavlov, N. S.; Sadovskii, M. V.

    2013-04-01

    We discuss the recently proposed LDA' + DMFT approach providing a consistent parameter-free treatment of the so-called double counting problem arising within the LDA + DMFT hybrid computational method for realistic strongly correlated materials. In this approach, the local exchange-correlation portion of the electron-electron interaction is excluded from self-consistent LDA calculations for strongly correlated electronic shells, e.g., d-states of transition metal compounds. Then, the corresponding double-counting term in the LDA' + DMFT Hamiltonian is consistently set in the local Hartree (fully localized limit, FLL) form of the Hubbard model interaction term. We present the results of extensive LDA' + DMFT calculations of densities of states, spectral densities, and optical conductivity for most typical representatives of two wide classes of strongly correlated systems in the paramagnetic phase: charge transfer insulators (MnO, CoO, and NiO) and strongly correlated metals (SrVO3 and Sr2RuO4). It is shown that for NiO and CoO systems, the LDA' + DMFT approach qualitatively improves the conventional LDA + DMFT results with the FLL type of double counting, where CoO and NiO were obtained to be metals. Our calculations also include transition-metal 4 s-states located near the Fermi level, missed in previous LDA + DMFT studies of these monoxides. General agreement with optical and the X-ray experiments is obtained. For strongly correlated metals, the LDA' + DMFT results agree well with the earlier LDA + DMFT calculations and existing experiments. However, in general, LDA' + DMFT results give better quantitative agreement with experimental data for band gap sizes and oxygen-state positions compared to the conventional LDA + DMFT method.

  6. Electronic nanobiosensors based on two-dimensional materials

    Science.gov (United States)

    Ping, Jinglei

    Atomically-thick two-dimensional (2D) nanomaterials have tremendous potential to be applied as transduction elements in biosensors and bioelectronics. We developed scalable methods for synthesis and large-area transfer of two-dimensional nanomaterials, particularly graphene and metal dichalcogenides (so called ``MX2'' materials). We also developed versatile fabrication methods for large arrays of field-effect transistors (FETs) and micro-electrodes with these nanomaterials based on either conventional photolithography or innovative approaches that minimize contamination of the 2D layer. By functionalizing the FETs with a computationally redesigned water-soluble mu-opioid receptor, we created selective and sensitive biosensors suitable for detection of the drug target naltrexone and the neuropeptide enkephalin at pg/mL concentrations. We also constructed DNA-functionalized biosensors and nano-particle decorated biosensors by applying related bio-nano integration techniques. Our methodology paves the way for multiplexed nanosensor arrays with all-electronic readout suitable for inexpensive point-of-care diagnostics, drug-development and biomedical research. With graphene field-effect transistors, we investigated the graphene/solution interface and developed a quantitative model for the effect of ionic screening on the graphene carrier density based on theories of the electric double layer. Finally, we have developed a technique for measuring low-level Faradaic charge-transfer current (fA) across the graphene/solution interface via real-time charge monitoring of graphene microelectrodes in ionic solution. This technique enables the development of flexible and transparent pH sensors that are promising for in vivo applications. The author acknowledges the support from the Defense Advanced Research Projects Agency (DARPA) and the U. S. Army Research Office under Grant Number W911NF1010093.

  7. Communication: Near-locality of exchange and correlation density functionals for 1- and 2-electron systems

    Science.gov (United States)

    Sun, Jianwei; Perdew, John P.; Yang, Zenghui; Peng, Haowei

    2016-05-01

    The uniform electron gas and the hydrogen atom play fundamental roles in condensed matter physics and quantum chemistry. The former has an infinite number of electrons uniformly distributed over the neutralizing positively charged background, and the latter only one electron bound to the proton. The uniform electron gas was used to derive the local spin density approximation to the exchange-correlation functional that undergirds the development of the Kohn-Sham density functional theory. We show here that the ground-state exchange-correlation energies of the hydrogen atom and many other 1- and 2-electron systems are modeled surprisingly well by a different local spin density approximation (LSDA0). LSDA0 is constructed to satisfy exact constraints but agrees surprisingly well with the exact results for a uniform two-electron density in a finite, curved three-dimensional space. We also apply LSDA0 to excited or noded 1-electron densities, where it works less well. Furthermore, we show that the localization of the exact exchange hole for a 1- or 2-electron ground state can be measured by the ratio of the exact exchange energy to its optimal lower bound.

  8. Correlated proton-electron hole dynamics in protonated water clusters upon extreme ultraviolet photoionization

    Directory of Open Access Journals (Sweden)

    Zheng Li

    2016-07-01

    Full Text Available The ultrafast nuclear and electronic dynamics of protonated water clusters H+(H2On after extreme ultraviolet photoionization is investigated. In particular, we focus on cluster cations with n = 3, 6, and 21. Upon ionization, two positive charges are present in the cluster related to the excess proton and the missing electron, respectively. A correlation is found between the cluster's geometrical conformation and initial electronic energy with the size of the final fragments produced. For situations in which the electron hole and proton are initially spatially close, the two entities become correlated and separate in a time-scale of 20 to 40 fs driven by strong non-adiabatic effects.

  9. Interplay between electron correlations and polar displacements in metallic SrEuMo2O6

    Science.gov (United States)

    Giovannetti, Gianluca; Puggioni, Danilo; Rondinelli, James M.; Capone, Massimo

    2016-03-01

    Using density functional theory and dynamical mean-field theory, we study the electronic properties of the proposed candidate polar metal SrEuMo2O6 . Its electronic structure shares similarities with centrosymmetric SrMoO3 and EuMoO3, from which it may be considered an ordered derivative, but polar displacements of the divalent cations and oxide anions lift inversion symmetry mediated by an anharmonic lattice interaction in the metallic state. We find that Hund's coupling promotes the effects of electronic correlations owing to the Mo4 + d2 electronic configuration, producing a correlated metallic phase far from the Mott state. The contraindication between metallicity and polar distortions is thereby alleviated in part through the renormalized quasiparticles, which are unable to fully screen the ordered local dipoles.

  10. Studies of electron correlation effects in multicharged ion atom collisions involving double capture

    Energy Technology Data Exchange (ETDEWEB)

    Stolterfoht, N.; Sommer, K.; Griffin, D.C.; Havener, C.C.; Huq, M.S.; Phaneuf, R.A.; Swenson, J.K.; Meyer, F.W.

    1988-01-01

    We review measurements of L-Coster Kronig and Auger electron production in slow, multicharged collision systems to study electron correlation effects in the process of double electron capture. The n/sup /minus/3/ law was confirmed for the production of the Coster-Kronig configurations 1s/sup 2/2pn/ell/ (n greater than or equal to 6) in O/sup 6 +/ + He collisions. Enhancement of high angular momentum /ell/ in specific 1s/sup 2/2pn/ell/ configurations was observed by means of high-resolution measurements of the Coster-Kronig lines. The importance of electron correlation effects in couplings of potential energy curves leading to the 1s/sup 2/2pn/ell/ configurations is verified by means of Landau-Zener model calculations. 32 refs., 4 figs.

  11. Spectroscopic evidence for negative electronic compressibility in a quasi-three-dimensional spin–orbit correlated metal

    Energy Technology Data Exchange (ETDEWEB)

    He, Junfeng; Hogan, T.; Mion, Thomas R.; Hafiz, H.; He, Y.; Denlinger, J. D.; Mo, S-K.; Dhital, C.; Chen, X.; Lin, Qisen; Zhang, Y.; Hashimoto, M.; Pan, H.; Lu, D. H.; Arita, M.; Shimada, K.; Markiewicz, R. S.; Wang, Z.; Kempa, K.; Naughton, M. J.; Bansil, A.; Wilson, S. D.; He, Rui-Hua

    2015-04-27

    Negative compressibility is a sign of thermodynamic instability of open1, 2, 3 or non-equilibrium4, 5 systems. In quantum materials consisting of multiple mutually coupled subsystems, the compressibility of one subsystem can be negative if it is countered by positive compressibility of the others. Manifestations of this effect have so far been limited to low-dimensional dilute electron systems6, 7, 8, 9, 10, 11. Here, we present evidence from angle-resolved photoemission spectroscopy (ARPES) for negative electronic compressibility (NEC) in the quasi-three-dimensional (3D) spin–orbit correlated metal (Sr1-xLax)3Ir2O7. Increased electron filling accompanies an anomalous decrease of the chemical potential, as indicated by the overall movement of the deep valence bands. Such anomaly, suggestive of NEC, is shown to be primarily driven by the lowering in energy of the conduction band as the correlated bandgap reduces. Our finding points to a distinct pathway towards an uncharted territory of NEC featuring bulk correlated metals with unique potential for applications in low-power nanoelectronics and novel metamaterials.

  12. The density matrix functional approach to electron correlation: Dynamic and nondynamic correlation along the full dissociation coordinate

    Energy Technology Data Exchange (ETDEWEB)

    Mentel, Ł. M.; Meer, R. van; Gritsenko, O. V. [Section Theoretical Chemistry, VU University, Amsterdam (Netherlands); Pohang University of Science and Technology, Pohang (Korea, Republic of); Baerends, E. J. [Section Theoretical Chemistry, VU University, Amsterdam (Netherlands); Pohang University of Science and Technology, Pohang (Korea, Republic of); Chemistry Department, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2014-06-07

    For chemistry an accurate description of bond weakening and breaking is vital. The great advantage of density matrix functionals, as opposed to density functionals, is their ability to describe such processes since they naturally cover both nondynamical and dynamical correlation. This is obvious in the Löwdin-Shull functional, the exact natural orbital functional for two-electron systems. We present in this paper extensions of this functional for the breaking of a single electron pair bond in N-electron molecules, using LiH, BeH{sup +}, and Li{sub 2} molecules as prototypes. Attention is given to the proper formulation of the functional in terms of not just J and K integrals but also the two-electron L integrals (K integrals with a different distribution of the complex conjugation of the orbitals), which is crucial for the calculation of response functions. Accurate energy curves are obtained with extended Löwdin-Shull functionals along the complete dissociation coordinate using full CI calculations as benchmark.

  13. High-resolution imaging by scanning electron microscopy of semithin sections in correlation with light microscopy.

    Science.gov (United States)

    Koga, Daisuke; Kusumi, Satoshi; Shodo, Ryusuke; Dan, Yukari; Ushiki, Tatsuo

    2015-12-01

    In this study, we introduce scanning electron microscopy (SEM) of semithin resin sections. In this technique, semithin sections were adhered on glass slides, stained with both uranyl acetate and lead citrate, and observed with a backscattered electron detector at a low accelerating voltage. As the specimens are stained in the same manner as conventional transmission electron microscopy (TEM), the contrast of SEM images of semithin sections was similar to TEM images of ultrathin sections. Using this technique, wide areas of semithin sections were also observed by SEM, without the obstruction of grids, which was inevitable for traditional TEM. This study also applied semithin section SEM to correlative light and electron microscopy. Correlative immunofluorescence microscopy and immune-SEM were performed in semithin sections of LR white resin-embedded specimens using a FluoroNanogold-labeled secondary antibody. Because LR white resin is hydrophilic and electron stable, this resin is suitable for immunostaining and SEM observation. Using correlative microscopy, the precise localization of the primary antibody was demonstrated by fluorescence microscopy and SEM. This method has great potential for studies examining the precise localization of molecules, including Golgi- and ER-associated proteins, in correlation with LM and SEM.

  14. Electronic Band Structure of BaCo_{2}As_{2}: A Fully Doped Ferropnictide Analog with Reduced Electronic Correlations

    Directory of Open Access Journals (Sweden)

    N. Xu

    2013-01-01

    Full Text Available We report an investigation with angle-resolved photoemission spectroscopy of the Fermi surface and electronic band structure of BaCo_{2}As_{2}. Although its quasinesting-free Fermi surface differs drastically from that of its Fe-pnictide cousins, we show that the BaCo_{2}As_{2} system can be used as an approximation to the bare unoccupied band structure of the related BaFe_{2-x}Co_{x}As_{2} and Ba_{1-x}K_{x}Fe_{2}As_{2} compounds. However, our experimental results, in agreement with dynamical-mean-field-theory calculations, indicate that electronic correlations are much less important in BaCo_{2}As_{2} than in the ferropnictides. Our findings suggest that this effect is due to the increased filling of the electronic 3d shell in the presence of significant Hund’s exchange coupling.

  15. Electron--electron correlations assessed analyzing doubly differential angular distributions in double ionization of helium by proton impact

    Science.gov (United States)

    Ciappina, Marcelo; Schulz, Michael; Kirchner, Tom; Fischer, Daniel; Moshammer, Robert; Ullrich, Joachim

    2008-10-01

    Double ionization (DI) of helium by ion impact presents a singular scenario to study electron-electron correlation in atomic physics. Recent experimental data have revealed signatures of this feature in the doubly differential cross sections in terms of the angles of the two emitted electrons [1]. We present an exhaustive theoretical and experimental study of these cross sections, by disentangling the contribution of the different mechanisms that contribute to DI [2]. To this end, first order and higher order distorted wave theories are implemented jointly with the Monte Carlo Event Generator method (MCEG) [3]. This latter tool allows us to incorporate efficiently all the experimental conditions in the theoretical models. [1] M. Schulz et al, J. Phys. B 38, 1363-1370 (2005). [2] M. F. Ciappina et al, PRA (in preparation) (2008). [3] M. D"urr et al, Phys. Rev. A 75, 062708 (2007).

  16. The contribution of Diamond Light Source to the study of strongly correlated electron systems and complex magnetic structures

    Energy Technology Data Exchange (ETDEWEB)

    Radaelli, P. G.; Dhesi, S. S.

    2015-01-26

    We review some of the significant contributions to the field of strongly correlated materials and complex magnets, arising from experiments performed at the Diamond Light Source (Harwell Science and Innovation Campus, Didcot, UK) during the first few years of operation (2007–2014). We provide a comprehensive overview of Diamond research on topological insulators, multiferroics, complex oxides and magnetic nanostructures. Several experiments on ultrafast dynamics, magnetic imaging, photoemission electron microscopy, soft X-ray holography and resonant magnetic hard and soft X-ray scattering are described.

  17. The contribution of Diamond Light Source to the study of strongly correlated electron systems and complex magnetic structures.

    Science.gov (United States)

    Radaelli, P G; Dhesi, S S

    2015-03-06

    We review some of the significant contributions to the field of strongly correlated materials and complex magnets, arising from experiments performed at the Diamond Light Source (Harwell Science and Innovation Campus, Didcot, UK) during the first few years of operation (2007-2014). We provide a comprehensive overview of Diamond research on topological insulators, multiferroics, complex oxides and magnetic nanostructures. Several experiments on ultrafast dynamics, magnetic imaging, photoemission electron microscopy, soft X-ray holography and resonant magnetic hard and soft X-ray scattering are described.

  18. Study of quantum spin correlations of relativistic electron pairs - Testing nonlocality of relativistic quantum mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Bodek, K.; Rozpędzik, D.; Zejma, J. [Jagiellonian University, Faculty of Physics, Astronomy and Applied Informatics, Reymonta 4, 30059 Kraków (Poland); Caban, P.; Rembieliński, J.; Włodarczyk, M. [University of Łódź, Faculty of Physics and Applied Informatics, Pomorska 149/153, 90236 Łódź (Poland); Ciborowski, J. [University of Warsaw, Faculty of Physics, Hoza 69, 00681 Warsaw (Poland); Enders, J.; Köhler, A. [Technische Universität Darmstadt, Institut für Kernphysik, Schlossgartenstraße 9, 64289 Darmstadt (Germany); Kozela, A. [Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31342 Kraków (Poland)

    2013-11-07

    The Polish-German project QUEST aims at studying relativistic quantum spin correlations of the Einstein-Rosen-Podolsky-Bohm type, through measurement of the correlation function and the corresponding probabilities for relativistic electron pairs. The results will be compared to theoretical predictions obtained by us within the framework of relativistic quantum mechanics, based on assumptions regarding the form of the relativistic spin operator. Agreement or divergence will be interpreted in the context of non-uniqueness of the relativistic spin operator in quantum mechanics as well as dependence of the correlation function on the choice of observables representing the spin. Pairs of correlated electrons will originate from the Mo/ller scattering of polarized 15 MeV electrons provided by the superconducting Darmstadt electron linear accelerator S-DALINAC, TU Darmstadt, incident on a Be target. Spin projections will be determined using the Mott polarimetry technique. Measurements (starting 2013) are planned for longitudinal and transverse beam polarizations and different orientations of the beam polarization vector w.r.t. the Mo/ller scattering plane. This is the first project to study relativistic spin correlations for particles with mass.

  19. Advances in imaging and electron physics time resolved electron diffraction for chemistry, biology and material science

    CERN Document Server

    Hawkes, Peter W

    2014-01-01

    Advances in Imaging & Electron Physics merges two long-running serials-Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Contributions from leading authorities Informs and updates on all the latest developments in the field.

  20. Development of advanced electron holographic techniques and application to industrial materials and devices.

    Science.gov (United States)

    Yamamoto, Kazuo; Hirayama, Tsukasa; Tanji, Takayoshi

    2013-06-01

    The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming important techniques for materials science and device engineering. We also describe some applications of electron holography to the analysis of industrial materials and devices: GaAs compound semiconductors, solid oxide fuel cells and all-solid-state lithium ion batteries.

  1. The double ionization of H{sub 2} by fast electron impact: Influence of the final state electron-electron correlation

    Energy Technology Data Exchange (ETDEWEB)

    Chuluunbaatar, O., E-mail: chuka@jinr.ru; Gusev, A. A., E-mail: gooseff@jinr.ru [Joint Institute for Nuclear Research (Russian Federation); Joulakian, B. B., E-mail: boghos.joulakian@univ-lorraine.fr [Universite Paul Verlaine-Metz, Laboratoire de Physique Moleculaire et des Collisions, Institut Jean Barriol (France)

    2013-02-15

    We have determined fully differential cross sections of the (e, 3e) double ionization of H{sub 2} by employing correlated initial- and final-state wave functions. We have constructed for the description of the two slow ejected electrons a symmetrized product of a correlation function and two-center continuum wave functions, which fulfill the correct boundary conditions asymptotically up to the order O((kr){sup -2}). We have shown that the introduction of the correlated part of the final-state wave function improves the results on the (e, 3-1e) of H{sub 2}.

  2. Preparation of homogeneous vitreous materials for electronic and optical devices

    Science.gov (United States)

    Gatos, H. C.; Platakis, N. S.; Witt, A. F.

    1971-01-01

    Vitreous material builds up as series of solidified layers on inside walls of sealed quartz ampoule containing molten constituents of material, and forms well defined shapes to close dimensional tolerances. Ampoules are made of material which does not react with melt and has lower thermal expansion coefficient than solidified layer.

  3. Depletion of density of states near Fermi energy induced by disorder and electron correlation in alloys

    Science.gov (United States)

    Noh, Han-Jin; Nahm, Tschang-Uh; Kim, Jae-Young; Park, W.-G.; Oh, S.-J.; Hong, J.-P.; Kim, C.-O.

    2000-03-01

    We have performed high resolution photoemission study of substitutionally disordered alloys Cu-Pt, Cu-Pd, Cu-Ni, and Pd-Pt. The ratios between alloy spectra and pure metal spectra are found to have dips at the Fermi level when the residual resistivity is high and when rather strong repulsive electron-electron interaction is expected. This is in accordance with Altshuler and Aronov's model which predicts depletion of density of states at the Fermi level when both disorder and electron correlation are present.

  4. Dynamic correlation in the electron angular distribution in ionization of helium by ion impact

    Energy Technology Data Exchange (ETDEWEB)

    Monti, J M; Fojon, O A; Rivarola, R D [Instituto de Fisica Rosario (CONICET-UNR) and Facultad de Ciencias Exactas, IngenierIa y Agrimensura, Universidad Nacional de Rosario, Avenida Pellegrini 250, 2000 Rosario (Argentina); Hanssen, J, E-mail: rivarola@fceia.unr.edu.ar [Institut de Chimie, Physique et Materiaux, Laboratoire de Physique Moleculaire et des Collisions, Universite Paul Verlaine - Metz, 1 Bv. Arago, 57078 Metz Cedex 3 (France)

    2011-04-01

    Single ionization of helium by proton impact is investigated in terms of a four-body distorted wave model. In this approximation both electrons are considered as active, being one of them ionized whereas the other remains in a residual target bound state. The influence of dynamic correlation between electrons is investigated by comparison with a four-body uncorrelated distorted wave model. Double differential cross sections as a function of the emission angle for fixed electron energies and different collision energies are presented.

  5. Correlative In Vivo 2 Photon and Focused Ion Beam Scanning Electron Microscopy of Cortical Neurons

    Science.gov (United States)

    Maco, Bohumil; Holtmaat, Anthony; Cantoni, Marco; Kreshuk, Anna; Straehle, Christoph N.; Hamprecht, Fred A.; Knott, Graham W.

    2013-01-01

    Correlating in vivo imaging of neurons and their synaptic connections with electron microscopy combines dynamic and ultrastructural information. Here we describe a semi-automated technique whereby volumes of brain tissue containing axons and dendrites, previously studied in vivo, are subsequently imaged in three dimensions with focused ion beam scanning electron microcopy. These neurites are then identified and reconstructed automatically from the image series using the latest segmentation algorithms. The fast and reliable imaging and reconstruction technique avoids any specific labeling to identify the features of interest in the electron microscope, and optimises their preservation and staining for 3D analysis. PMID:23468982

  6. Correlative in vivo 2 photon and focused ion beam scanning electron microscopy of cortical neurons.

    Directory of Open Access Journals (Sweden)

    Bohumil Maco

    Full Text Available Correlating in vivo imaging of neurons and their synaptic connections with electron microscopy combines dynamic and ultrastructural information. Here we describe a semi-automated technique whereby volumes of brain tissue containing axons and dendrites, previously studied in vivo, are subsequently imaged in three dimensions with focused ion beam scanning electron microcopy. These neurites are then identified and reconstructed automatically from the image series using the latest segmentation algorithms. The fast and reliable imaging and reconstruction technique avoids any specific labeling to identify the features of interest in the electron microscope, and optimises their preservation and staining for 3D analysis.

  7. Concepts relating magnetic interactions, intertwined electronic orders, and strongly correlated superconductivity.

    Science.gov (United States)

    Davis, J C Séamus; Lee, Dung-Hai

    2013-10-29

    Unconventional superconductivity (SC) is said to occur when Cooper pair formation is dominated by repulsive electron-electron interactions, so that the symmetry of the pair wave function is other than an isotropic s-wave. The strong, on-site, repulsive electron-electron interactions that are the proximate cause of such SC are more typically drivers of commensurate magnetism. Indeed, it is the suppression of commensurate antiferromagnetism (AF) that usually allows this type of unconventional superconductivity to emerge. Importantly, however, intervening between these AF and SC phases, intertwined electronic ordered phases (IP) of an unexpected nature are frequently discovered. For this reason, it has been extremely difficult to distinguish the microscopic essence of the correlated superconductivity from the often spectacular phenomenology of the IPs. Here we introduce a model conceptual framework within which to understand the relationship between AF electron-electron interactions, IPs, and correlated SC. We demonstrate its effectiveness in simultaneously explaining the consequences of AF interactions for the copper-based, iron-based, and heavy-fermion superconductors, as well as for their quite distinct IPs.

  8. Quantum Chemistry on the time axis: electron correlations and rearrangements on femtosecond and attosecond scales

    CERN Document Server

    Nicolaides, Cleanthes A

    2015-01-01

    Recent developments toward the production and laboratory use of pulses of high intensity, and/or of very high frequency, and/or of ultrashort duration, make possible experiments which can produce time-resolved data on ultrafast transformations involving motions of electrons. The formulation, quantitative understanding and prediction of related new phenomena entail the possibility of computing and applying solutions of the many-electron time-dependent Schroedinger equation, for arbitrary electronic structures, including the dominant effects of Rydberg series, of multiply excited states and of the multi-channel continuous spectrum. To this purpose, we have proposed and applied to many prototypical cases the state-specific expansion approach (SSEA). (Mercouris, Komninos and Nicolaides, Adv. Quantum Chem. 60, 333 (2010)). The paper explains briefly the SSEA, and outlines four of its applications to recently formulated problems concerning time-resolved electronic processes, where electron correlations are crucial....

  9. Institutional Challenges to Increased Library Provision of Electronic Materials

    Science.gov (United States)

    Johnson, Gareth J.

    2007-01-01

    The University of York is among the top universities in the United Kingdom, yet has not adopted all manner of electronic media. The University Library attempts to meet the demands placed upon it by its academic and student users for electronic media of all kinds, while working within a sometimes frame work that does not encourage exploitation of…

  10. Effects of electron correlations on transport properties of iron at Earth's core conditions.

    Science.gov (United States)

    Zhang, Peng; Cohen, R E; Haule, K

    2015-01-29

    Earth's magnetic field has been thought to arise from thermal convection of molten iron alloy in the outer core, but recent density functional theory calculations have suggested that the conductivity of iron is too high to support thermal convection, resulting in the investigation of chemically driven convection. These calculations for resistivity were based on electron-phonon scattering. Here we apply self-consistent density functional theory plus dynamical mean-field theory (DFT + DMFT) to iron and find that at high temperatures electron-electron scattering is comparable to the electron-phonon scattering, bringing theory into agreement with experiments and solving the transport problem in Earth's core. The conventional thermal dynamo picture is safe. We find that electron-electron scattering of d electrons is important at high temperatures in transition metals, in contrast to textbook analyses since Mott, and that 4s electron contributions to transport are negligible, in contrast to numerous models used for over fifty years. The DFT+DMFT method should be applicable to other high-temperature systems where electron correlations are important.

  11. Insight into the electron-positron correlations in metals through the looking glass

    Science.gov (United States)

    Rubaszek, Anna

    2016-05-01

    A semi-empirical analysis of the positron annihilation experimental spectra indicates for a strong sensitivity of the two-particle electron-positron (e-p) enhancement factor to the l=s, p, d, f character of the initial electronic state [1,2]. The essential discrepancy between the models consists in the dependence of the relevant correlation functions on the energy of the annihilating electron. The present contribution contains a theoretical study of the e-p enhancement factors for s, p, d and f states as a function of the electron energy. The slope of the resulting characteristics is directly related to the degree of localisation of the s, p, d and f electrons in the electron density of states. This effect occurs especially for d electrons in transition metals, in favour to the approach of Ref. [1]. The energy dependence of the two-particle correlation functions is also a source of controversy between various theoretical approaches. The energy dependent enhancement factors describe properly the positron interaction with delocalised s and p electrons, but this approach overestimates the high momentum components of the e-p momentum densities, dominated by the localised d and f states. On the contrary, the calculations that employ the energy averaged enhancement factors match better with experiment for localised d and f electrons, but they hardly reproduce experimental spectra for nearly-free electron populations. An attempt to visit two sides of the looking glass is made in the theory of the present work. The model combines the properties of both approaches. The resulting e-p momentum densities and enhancement factors are in good agreement with the experimental data for simple, noble and transition metals, both in the low and high momentum region.

  12. Electron correlation dynamics of strong-field double ionization of atoms below recollision threshold

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yunquan; Gong Qihuang [Department of Physics and State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 (China); Ye Difa; Liu Jie [Center for Applied Physics and Technology, Peking University, 100084 Beijing (China); Rudenko, A; Tschuch, S; Duerr, M; Moshammer, R; Ullrich, J [Max-Planck-Institut fuer Kernphysik, D-69117 Heidelberg (Germany); Siegel, M; Morgner, U, E-mail: yunquan.liu@pku.edu.cn [Leibniz Universitaet Hannover, Welfengarten 1, D-30167 Hannover (Germany)

    2011-02-01

    In recent combined experimental and theoretical study we have explored nonsequential double ionization of neon and argon atoms in the infrared light field (800nm) below the recollision threshold. We find that the two-electron correlation dynamics depends on atomic structure- 'side-by-side emission' (correlation) for Ne and 'back-to-back emission' (anticorrelation) for argon atoms. This can be explained theoretically within our three dimensional classical model calculation including tunnelling effect. The multiple recollisions as well as recollision-induced-excitation-tunnelling (RIET) effect dominate the anticorrelation of argon, whereas the laser-assisted instantaneous recollision dominates the correlation of neon.

  13. Electron Correlation in Nonsequential Double Ionization of Helium by Two-Color Pulses

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yue-Ming; LIAO Qing; HUANG Cheng; TONG Ai-Hong; LU Pei-Xiang

    2010-01-01

    @@ We investigate the momentum and energy correlations between the two electrons from nonsequential double ionization(NSDI)of helium by strong two-color pulses with the classical three-dimensional ensemble model.The correlated momentum distribution in the direction parallel to the laser field exhibits an arc-like structure and the sum-energy spectrum shows a sharp peak for the NSDI of helium in the two-color fields.Back analysis reveals that the narrow time interval during which recollisions occur,the low returning energy and the short time delay between recollision and double ionization lead to the novel momentum and energy correlations.

  14. Extending the random-phase approximation for electronic correlation energies: the renormalized adiabatic local density approximation

    DEFF Research Database (Denmark)

    Olsen, Thomas; Thygesen, Kristian S.

    2012-01-01

    while chemical bond strengths and absolute correlation energies are systematically underestimated. In this work we extend the RPA by including a parameter-free renormalized version of the adiabatic local-density (ALDA) exchange-correlation kernel. The renormalization consists of a (local) truncation...... of the ALDA kernel for wave vectors q > 2kF, which is found to yield excellent results for the homogeneous electron gas. In addition, the kernel significantly improves both the absolute correlation energies and atomization energies of small molecules over RPA and ALDA. The renormalization can...

  15. System for electronic transformation and geographic correlation of satellite television information. [cloud cover photography

    Science.gov (United States)

    Dubenskiy, V. P.; Nemkovskiy, B. L.; Rodionov, B. N.

    1974-01-01

    An electronic transformation and correlation system has been developed for the Meteor space weather system which provides transformation and scaling of the original picture, accounts for satellite flight altitude and inclinations of the optical axes of the transmitting devices, and simultaneously superposes the geographical coordinate grid on the transformed picture.

  16. Electronic Properties of Tin and Bismuth from Angular Correlation of Annihilation Photons

    DEFF Research Database (Denmark)

    Mogensen, O.E.; Trumpy, Georg

    1969-01-01

    ) deformed bismuth. For both metals, the single-crystal angular-correlation curves lie near to the free-electron parabola. The tin curves show more anisotropy than the bismuth curves. An important result is the clear anisotropy found in the high-momentum part of the curves—the tails—for both metals. Little...

  17. Decorrelation and fringe visibility: On the limiting behavior of varous electronic speckle pattern correlation interferometers

    DEFF Research Database (Denmark)

    Owner-Petersen, Mette

    1996-01-01

    I discuss the behavior of fringe formation in image-plane electronic speckle-pattern correlation interferometers as the limit of total decorrelation is approached. The interferometers are supposed to operate in the difference mode. The effect of decorrelation will be a decrease in fringe visibility...

  18. Electron Correlation Effects on the Longitudinal Polarizabilities and Second Hyperpolarizabilities of Polyenes: A Finite Field Study

    Directory of Open Access Journals (Sweden)

    Qingxu Li

    2014-01-01

    perturbation theory and coupled cluster with singles and doubles method. Calculations with density functional theory are also made to compare with wave-function based methods. Our study shows that electron correlation reduces linear longitudinal polarizability and enhances longitudinal second hyperpolarizability for short polyenes, but the effects decrease as the chain increases; choosing appropriate basis sets is important when quantitative results are required.

  19. Tailoring correlations of the local density of states in disordered photonic materials

    CERN Document Server

    Riboli, F; Monaco, G; Caselli, N; Intonti, F; Gurioli, M; Skipetrov, S E

    2016-01-01

    We present experimental evidence for the different mechanisms driving the fluctuations of the local density of states (LDOS) in disordered photonic systems. We establish a clear link between the microscopic structure of the material and the frequency correlation function of LDOS accessed by a near-field hyperspectral imaging technique. We show, in particular, that short- and long-range frequency correlations of LDOS are controlled by different physical processes (multiple or single scattering processes, respectively) that can be---to some extent---manipulated independently. We also demonstrate that the single scattering contribution to the LDOS fluctuations is sensitive to subwavelength features of the material and, in particular, to the correlation length of its dielectric function. Our work paves the way towards a complete control of statistical properties of disordered photonic systems, allowing for designing materials with predefined LDOS correlations.

  20. A correlative optical microscopy and scanning electron microscopy approach to locating nanoparticles in brain tumors.

    Science.gov (United States)

    Kempen, Paul J; Kircher, Moritz F; de la Zerda, Adam; Zavaleta, Cristina L; Jokerst, Jesse V; Mellinghoff, Ingo K; Gambhir, Sanjiv S; Sinclair, Robert

    2015-01-01

    The growing use of nanoparticles in biomedical applications, including cancer diagnosis and treatment, demands the capability to exactly locate them within complex biological systems. In this work a correlative optical and scanning electron microscopy technique was developed to locate and observe multi-modal gold core nanoparticle accumulation in brain tumor models. Entire brain sections from mice containing orthotopic brain tumors injected intravenously with nanoparticles were imaged using both optical microscopy to identify the brain tumor, and scanning electron microscopy to identify the individual nanoparticles. Gold-based nanoparticles were readily identified in the scanning electron microscope using backscattered electron imaging as bright spots against a darker background. This information was then correlated to determine the exact location of the nanoparticles within the brain tissue. The nanoparticles were located only in areas that contained tumor cells, and not in the surrounding healthy brain tissue. This correlative technique provides a powerful method to relate the macro- and micro-scale features visible in light microscopy with the nanoscale features resolvable in scanning electron microscopy.

  1. Electron correlation in two-photon double ionization of helium from attosecond to FEL pulses

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Lee [Los Alamos National Laboratory

    2009-01-01

    We investigate the role of electron correlation in the two-photon double ionization of helium for ultrashort pulses in the extreme ultraviolet (XUV) regime with durations ranging from a hundred attoseconds to a few femtoseconds. We perform time-dependent ab initio calculations for pulses with mean frequencies in the so-called 'sequential' regime ({Dirac_h}{omega} > 54.4 eV). Electron correlation induced by the time correlation between emission events manifests itself in the angular distribution of the ejected electrons, which strongly depends on the energy sharing between them. We show that for ultrashort pulses two-photon double ionization probabilities scale non-uniformly with pulse duration depending on the energy sharing between the electrons. Most interestingly we find evidence for an interference between direct ('nonsequential') and indirect ('sequential') double photoionization with intermediate shake-up states, the strength of which is controlled by the pulse duration. This observation may provide a route towards measuring the pulse duration of x-ray free-electron laser (XFEL) pulses.

  2. The effects of local correlations on the electronic structure of FeSe

    Science.gov (United States)

    Watson, Matthew; Kim, Timur; Haghighirad, Amir; Coldea, Amalia

    FeSe is structurally the simplest of Fe-based superconductors, but its complex and unique properties pose important theoretical questions. One important aspect of the physics of FeSe is the understanding of the strength and effects of electronic correlations. In order to explore this, we have performed angle-resolved photo-emission spectroscopy (ARPES) measurements on high quality bulk single crystals of FeSe over a wide range of binding energies, in different scattering geometries and with varying incident photon energies, analysing the quasiparticle renormalisations, scattering rates and degree of coherence. We find that FeSe exhibits moderately strong, orbital-dependent correlation effects which are understood to arise primarily due to local electron-electron interactions on the Fe sites. We conclude that electronic correlations constitute a key ingredient in understanding the electronic structure of FeSe. Part of this work was supported by EPSRC, UK (EP/I004475/1, EP/I017836/1). We thank Diamond Light Source for access to Beamline I05.

  3. Cavity Born-Oppenheimer Approximation for Correlated Electron-Nuclear-Photon Systems

    CERN Document Server

    Flick, Johannes; Ruggenthaler, Michael; Rubio, Angel

    2016-01-01

    In this work, we illustrate the recently introduced concept of the cavity Born-Oppenheimer approximation for correlated electron-nuclear-photon problems in detail. We demonstrate how an expansion in terms of conditional electronic and photon-nuclear wave functions accurately describes eigenstates of strongly correlated light-matter systems. For a GaAs quantum ring model in resonance with a photon mode we highlight how the ground-state electronic potential-energy surface changes the usual harmonic potential of the free photon mode to a dressed mode with a double-well structure. This change is accompanied by a splitting of the electronic ground-state density. For a model where the photon mode is in resonance with a vibrational transition, we observe in the excited-state electronic potential-energy surface a splitting from a single minimum to a double minimum. Furthermore, for a time-dependent setup, we show how the dynamics in correlated light-matter systems can be understood in terms of population transfer bet...

  4. Writing an Electronic Astronomy Book with Interactive Curricular Material

    Science.gov (United States)

    Thompson, Kristen L.; Belloni, Mario; Christian, Wolfgang

    2015-01-01

    With the rise of tablets, the past few years have seen an increase in the demand for quality electronic textbooks. Unfortunately, most of the current offerings do not exploit the accessibility and interactivity that electronic books can deliver. In this poster, we discuss how we are merging our curriculum development projects (Physlets, Easy Java/JavaScript Simulations, and Open Source Physics) with the EPUB electronic book format to develop an interactive textbook for use in a one-semester introductory astronomy course. The book, Astronomy: An Interactive Introduction, combines the narrative, equations, and images of a traditional astronomy text with new JavaScript simulations.

  5. Adhesives technology for electronic applications materials, processing, reliability

    CERN Document Server

    Licari, James J

    2011-01-01

    Adhesives are widely used in the manufacture and assembly of electronic circuits and products. Generally, electronics design engineers and manufacturing engineers are not well versed in adhesives, while adhesion chemists have a limited knowledge of electronics. This book bridges these knowledge gaps and is useful to both groups. The book includes chapters covering types of adhesive, the chemistry on which they are based, and their properties, applications, processes, specifications, and reliability. Coverage of toxicity, environmental impacts and the regulatory framework make this book par

  6. Oxide molecular beam epitaxy and its applications in the study of electronic states of correlated materials%氧化物分子束外延技术及其在关联材料电子态研究中的应用

    Institute of Scientific and Technical Information of China (English)

    封东来; 沈大伟; 徐海超; 彭瑞

    2012-01-01

    氧化物分子束外延薄膜和异质结生长技术近年来迅速发展,人们已实现以单原子层的精度来精确生长多种复杂量子材料,有力地推动了铜氧化物高温超导电性、二维电子气、氧化物电子学和自旋电子学器件等领域的研究.文章介绍了氧化物分子束外延的技术关键,并以La1-xSrxMnO3薄膜为例,介绍了钙钛矿结构的氧化物薄膜生长和刻画.特别是文章作者通过建立超高真空下的原位样品传送系统,可把薄膜样品直接传送到角分辨光电子能谱仪中,实现了薄膜的原位电子结构测量.所测得的La1-xSrxMnO3的电子结构与能带计算结果较为相符.而此类立方结构的、不可解理材料的电子结构,过去往往是无法直接测量的.%Oxide molecular beam epitaxy technique has been rapidly developed in the recent years. Oxide films and heterostrutures can be made with the precision of single atomic layer,which has helped facilitate the research of high temperature superconductivity, two dimensional electron gas, and oxide-based electronics and spintronics. Taking La1-x Srx MnO3 thin film as an example, we introduce the oxide molecular beam epitaxy and basic characterizations for a perovskite thin film. Moreover, we show that by combining oxide molecular beam epitaxy and angle resolved photoemis sion spectroscopy,in-situ electronic structure measurements become feasible for thin films. The measured electronic structure of La1-x Srx MnO3 thin film shows fairly good agreement with the band structure calculations, while previously the electronic structure of such uncleavable cubic-structured materials usually could not be obtained with photoemission spectroscopy.

  7. Dow Corning~ Materials for Printed Electronics

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new generation of RFID materials with de- signed-in compatibility helps raise quality, reliability and process efficiency If RFID technology is headed for the heights predicted by forecasters, it will require an ongoing evolution of new materials and re- lated technologies to help reduce card/label assembly costs and improve performance. From a materials standpoint, the critical elements in any printed RFID inlay include the chip, the chip attachment method, the antenna,

  8. Black Box Real-Time Transient Absorption Spectroscopy and Electron Correlation

    Science.gov (United States)

    Parkhill, John

    2017-06-01

    We introduce an atomistic, all-electron, black-box electronic structure code to simulate transient absorption (TA) spectra and apply it to simulate pyrazole and a GFP- chromophore derivative1. The method is an application of OSCF2, our dissipative exten- sion of time-dependent density-functional theory. We compare our simulated spectra directly with recent ultra-fast spectroscopic experiments. We identify features in the TA spectra to Pauli-blocking which may be missed without a first-principles model. An important ingredient in this method is the stationary-TDDFT correction scheme recently put forwards by Fischer, Govind, and Cramer which allows us to overcome a limitation of adiabatic TDDFT. We demonstrate that OSCF2 is able to reproduce the energies of bleaches and induced absorptions, as well as the decay of the transient spectrum, with only the molecular structure as input. We show that the treatment of electron correlation is the biggest hurdle for TA simulations, which motivates the second half of the talk a new method for realtime electron correlation. We continue to derive and propagate self-consistent electronic dynamics. Extending our derivation of OSCF2 to include electron correlation we obtain a non-linear correlated one-body equation of motion which corrects TDHF. Similar equations are known in quantum kinetic theory, but rare in electronic structure. We introduce approximations that stabilize the theory and reduce its computational cost. We compare the resulting dynamics with well-known exact and approximate theories showing improvements over TDHF. When propagated EE2 changes occupation numbers like exact theory, an important feature missing from TDHF or TDDFT. We introduce a rotating wave approximation to reduce the scaling of the model to O(N^4), and enable propagation on realistically large systems. The equation-of-motion does not rely on a pure-state model for the electronic state, and could be used to study the relationship between electron

  9. Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Moutinho, H.R.; Hasoon, F.A.; Keyes, B.M.; Ahrenkiel, R.K.; Al-Jassim, M.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States); Birkmire, R.W. [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion

    1994-12-31

    This paper provides first-time correlations of the nanoscale physical structure with the macroscale electronic and optical properties of CdTe/CdS thin films for several standard deposition techniques. Atomic force microscopy (AFM) was used to determine the micro and nanostructures of polycrystalline CdTe thin films used in photovoltaic (PV) cell fabrication. Photoluminescence (PL) was used to determine band gap, relative defect density, and photoexcited carrier lifetime. Nanostructural features (nanograins), beyond the spatial resolution of conventional scanning electron microscopy (SEM), were observed and characterized in as-deposited CdTe. The correlations of the proximal probe measurements of the physical structure with the optically determined electronic properties were used to show the effects of the chemical and heat processing, directly and conclusively. A particularly striking effect with important implications for PV applications is the diffusion of sulfur across the CdTe/CdS interface during heat treatment.

  10. First principles electron-correlated calculations of optical absorption in magnesium clusters

    CERN Document Server

    Shinde, Ravindra

    2015-01-01

    In this paper we report the calculations of linear optical absorption spectra of various isomers of magnesium clusters Mg$_{n}$ (n=2--5) involving valence transitions, performed using the large-scale all-electron configuration interaction (CI) methodology. First, geometries of several low-lying isomers of each cluster were optimized at the coupled-cluster singles doubles (CCSD) level of theory. These geometries were subsequently employed to perform ground and excited state calculations on these systems using the multi-reference singles-doubles configuration-interaction (MRSDCI) approach, which includes electron correlation effects at a sophisticated level. Resultant CI wave functions were used to compute the optical absorption spectra within the electric-dipole approximation. Our results on magnesium dimer (Mg$_{2}$) isomer are in excellent agreement with the experiments as far as oscillator strengths, and excitation energies are concerned. Owing to a better description of electron-correlation effects, these ...

  11. 2012 CORRELATED ELECTRON SYSTEMS GRC AND GRS, JUNE 23-29, 2012

    Energy Technology Data Exchange (ETDEWEB)

    Kivelson, Steven

    2012-06-29

    The 2012 Gordon Conference on Correlated Electron Systems will present cutting-edge research on emergent properties arising from strong electronic correlations. While we expect the discussion at the meeting to be wide-ranging, given the breadth of the title subject matter, we have chosen several topics to be the particular focus of the talks. These are New Developments in Single and Bilayer Graphene, Topological States of Matter, including Topological Insulators and Spin Liquids, the Interplay Between Magnetism and Unconventional Superconductivity, and Quantum Critical Phenomena in Metallic Systems. We also plan to have shorter sessions on Systems Far From Equilibrium, Low Dimensional Electron Fluids, and New Directions (which will primarily focus on new experimental methodologies and their interpretation).

  12. Correlated fluorescence and 3D electron microscopy with high sensitivity and spatial precision

    Science.gov (United States)

    Kukulski, Wanda; Schorb, Martin; Welsch, Sonja; Picco, Andrea

    2011-01-01

    Correlative electron and fluorescence microscopy has the potential to elucidate the ultrastructural details of dynamic and rare cellular events, but has been limited by low precision and sensitivity. Here we present a method for direct mapping of signals originating from ∼20 fluorescent protein molecules to 3D electron tomograms with a precision of less than 100 nm. We demonstrate that this method can be used to identify individual HIV particles bound to mammalian cell surfaces. We also apply the method to image microtubule end structures bound to mal3p in fission yeast, and demonstrate that growing microtubule plus-ends are flared in vivo. We localize Rvs167 to endocytic sites in budding yeast, and show that scission takes place halfway through a 10-s time period during which amphiphysins are bound to the vesicle neck. This new technique opens the door for direct correlation of fluorescence and electron microscopy to visualize cellular processes at the ultrastructural scale. PMID:21200030

  13. 18 CFR 341.1 - Electronic filing of tariffs and related materials.

    Science.gov (United States)

    2010-04-01

    ... Electronic filing of tariffs and related materials. (a) General rule. Filings of tariff publications and... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Electronic filing of tariffs and related materials. 341.1 Section 341.1 Conservation of Power and Water Resources...

  14. 18 CFR 154.4 - Electronic filing of tariffs and related materials.

    Science.gov (United States)

    2010-04-01

    ... TARIFFS General Provisions and Conditions § 154.4 Electronic filing of tariffs and related materials. (a... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Electronic filing of tariffs and related materials. 154.4 Section 154.4 Conservation of Power and Water Resources...

  15. Improved Scintillator Materials For Compact Electron Antineutrino Detectors

    NARCIS (Netherlands)

    Dijkstra, Peter; Wortche, Heinrich J.; Browne, Wesley R.

    2012-01-01

    Recent developments provide new components holding the potential to improve the performance of liquid scintillation electron antineutrino detectors used as nuclear reactors monitors. Current systems raise issues regarding size, quantum efficiency, stability, and spatial resolution of the vertex dete

  16. DIFFERENCES BETWEEN ELECTRONS AND POSITRONS INTERACTING WITH DETECTOR MATERIAL

    NARCIS (Netherlands)

    MEIRING, WJ; VANKLINKEN, J; WICHERS, VA

    1991-01-01

    A theory of multiple scattering, exhibiting differences between electrons and positrons in interactions with matter, is developed. Additional differences in stopping power and annihilation for positrons are briefly discussed. Experimental verification of these differences is reported for plastic sci

  17. Correlation Matrix Renormalization Theory: Improving Accuracy with Two-Electron Density-Matrix Sum Rules.

    Science.gov (United States)

    Liu, C; Liu, J; Yao, Y X; Wu, P; Wang, C Z; Ho, K M

    2016-10-11

    We recently proposed the correlation matrix renormalization (CMR) theory to treat the electronic correlation effects [Phys. Rev. B 2014, 89, 045131 and Sci. Rep. 2015, 5, 13478] in ground state total energy calculations of molecular systems using the Gutzwiller variational wave function (GWF). By adopting a number of approximations, the computational effort of the CMR can be reduced to a level similar to Hartree-Fock calculations. This paper reports our recent progress in minimizing the error originating from some of these approximations. We introduce a novel sum-rule correction to obtain a more accurate description of the intersite electron correlation effects in total energy calculations. Benchmark calculations are performed on a set of molecules to show the reasonable accuracy of the method.

  18. Secondary Electron Emission Materials for Transmission Dynodes in Novel Photomultipliers: A Review

    Directory of Open Access Journals (Sweden)

    Shu Xia Tao

    2016-12-01

    Full Text Available Secondary electron emission materials are reviewed with the aim of providing guidelines for the future development of novel transmission dynodes. Materials with reflection secondary electron yield higher than three and transmission secondary electron yield higher than one are tabulated for easy reference. Generations of transmission dynodes are listed in the order of the invention time with a special focus on the most recent atomic-layer-deposition synthesized transmission dynodes. Based on the knowledge gained from the survey of secondary election emission materials with high secondary electron yield, an outlook of possible improvements upon the state-of-the-art transmission dynodes is provided.

  19. Can X-ray constrained Hartree-Fock wavefunctions retrieve electron correlation?

    Science.gov (United States)

    Genoni, Alessandro; Dos Santos, Leonardo H R; Meyer, Benjamin; Macchi, Piero

    2017-03-01

    The X-ray constrained wavefunction (XC-WF) method proposed by Jayatilaka [Jayatilaka & Grimwood (2001) ▸, Acta Cryst. A57, 76-86] has attracted much attention because it represents a possible third way of theoretically studying the electronic structure of atoms and molecules, combining features of the more popular wavefunction- and DFT-based approaches. In its original formulation, the XC-WF technique extracts statistically plausible wavefunctions from experimental X-ray diffraction data of molecular crystals. A weight is used to constrain the pure Hartree-Fock solution to the observed X-ray structure factors. Despite the wavefunction being a single Slater determinant, it is generally assumed that its flexibility could guarantee the capture, better than any other experimental model, of electron correlation effects, absent in the Hartree-Fock Hamiltonian but present in the structure factors measured experimentally. However, although the approach has been known for long time, careful testing of this fundamental hypothesis is still missing. Since a formal demonstration is impossible, the validation can only be done heuristically and, to accomplish this task, X-ray constrained Hartree-Fock calculations have been performed using structure factor amplitudes computed at a very high correlation level (coupled cluster) for selected molecules in isolation, in order to avoid the perturbations due to intermolecular interactions. The results show that a single-determinant XC-WF is able to capture the electron correlation effects only partially. The largest amount of electron correlation is extracted when: (i) a large external weight is used (much larger than what has normally been used in XC-WF calculations using experimental data); and (ii) the high-order reflections, which carry less information on the electron correlation, are down-weighted (or even excluded), otherwise they would bias the fitting towards the unconstrained Hartree-Fock wavefunction.

  20. Can X-ray constrained Hartree–Fock wavefunctions retrieve electron correlation?

    Directory of Open Access Journals (Sweden)

    Alessandro Genoni

    2017-03-01

    Full Text Available The X-ray constrained wavefunction (XC-WF method proposed by Jayatilaka [Jayatilaka & Grimwood (2001, Acta Cryst. A57, 76–86] has attracted much attention because it represents a possible third way of theoretically studying the electronic structure of atoms and molecules, combining features of the more popular wavefunction- and DFT-based approaches. In its original formulation, the XC-WF technique extracts statistically plausible wavefunctions from experimental X-ray diffraction data of molecular crystals. A weight is used to constrain the pure Hartree–Fock solution to the observed X-ray structure factors. Despite the wavefunction being a single Slater determinant, it is generally assumed that its flexibility could guarantee the capture, better than any other experimental model, of electron correlation effects, absent in the Hartree–Fock Hamiltonian but present in the structure factors measured experimentally. However, although the approach has been known for long time, careful testing of this fundamental hypothesis is still missing. Since a formal demonstration is impossible, the validation can only be done heuristically and, to accomplish this task, X-ray constrained Hartree–Fock calculations have been performed using structure factor amplitudes computed at a very high correlation level (coupled cluster for selected molecules in isolation, in order to avoid the perturbations due to intermolecular interactions. The results show that a single-determinant XC-WF is able to capture the electron correlation effects only partially. The largest amount of electron correlation is extracted when: (i a large external weight is used (much larger than what has normally been used in XC-WF calculations using experimental data; and (ii the high-order reflections, which carry less information on the electron correlation, are down-weighted (or even excluded, otherwise they would bias the fitting towards the unconstrained Hartree–Fock wavefunction.

  1. Can X-ray constrained Hartree–Fock wavefunctions retrieve electron correlation?

    Science.gov (United States)

    Genoni, Alessandro; Dos Santos, Leonardo H. R.; Meyer, Benjamin; Macchi, Piero

    2017-01-01

    The X-ray constrained wavefunction (XC-WF) method proposed by Jayatilaka [Jayatilaka & Grimwood (2001) ▸, Acta Cryst. A57, 76–86] has attracted much attention because it represents a possible third way of theoretically studying the electronic structure of atoms and molecules, combining features of the more popular wavefunction- and DFT-based approaches. In its original formulation, the XC-WF technique extracts statistically plausible wavefunctions from experimental X-ray diffraction data of molecular crystals. A weight is used to constrain the pure Hartree–Fock solution to the observed X-ray structure factors. Despite the wavefunction being a single Slater determinant, it is generally assumed that its flexibility could guarantee the capture, better than any other experimental model, of electron correlation effects, absent in the Hartree–Fock Hamiltonian but present in the structure factors measured experimentally. However, although the approach has been known for long time, careful testing of this fundamental hypothesis is still missing. Since a formal demonstration is impossible, the validation can only be done heuristically and, to accomplish this task, X-ray constrained Hartree–Fock calculations have been performed using structure factor amplitudes computed at a very high correlation level (coupled cluster) for selected molecules in isolation, in order to avoid the perturbations due to intermolecular interactions. The results show that a single-determinant XC-WF is able to capture the electron correlation effects only partially. The largest amount of electron correlation is extracted when: (i) a large external weight is used (much larger than what has normally been used in XC-WF calculations using experimental data); and (ii) the high-order reflections, which carry less information on the electron correlation, are down-weighted (or even excluded), otherwise they would bias the fitting towards the unconstrained Hartree–Fock wavefunction. PMID:28250952

  2. Quantum Interferometry and Correlated Two-Electron Wave-Packet Observation in Helium

    CERN Document Server

    Ott, Christian; Raith, Philipp; Meyer, Kristina; Laux, Martin; Zhang, Yizhu; Hagstotz, Steffen; Ding, Thomas; Heck, Robert; Pfeifer, Thomas

    2012-01-01

    The concerted motion of two or more bound electrons governs atomic and molecular non-equilibrium processes and chemical reactions. It is thus a long-standing scientific dream to measure the dynamics of two bound correlated electrons in the quantum regime. Quantum wave packets were previously observed for single-active electrons on their natural attosecond timescales. However, at least two active electrons and a nucleus are required to address the quantum three-body problem. This situation is realized in the helium atom, but direct time-resolved observation of two-electron wave-packet motion remained an unaccomplished challenge. Here, we measure a 1.2-femtosecond quantum beating among low-lying doubly-excited states in helium to evidence a correlated two-electron wave packet. Our experimental method combines attosecond transient-absorption spectroscopy at unprecedented high spectral resolution (20 meV near 60 eV) with an intensity-tuneable visible laser field to couple the quantum states from the perturbative ...

  3. Electron work function-a promising guiding parameter for material design.

    Science.gov (United States)

    Lu, Hao; Liu, Ziran; Yan, Xianguo; Li, Dongyang; Parent, Leo; Tian, Harry

    2016-04-14

    Using nickel added X70 steel as a sample material, we demonstrate that electron work function (EWF), which largely reflects the electron behavior of materials, could be used as a guide parameter for material modification or design. Adding Ni having a higher electron work function to X70 steel brings more "free" electrons to the steel, leading to increased overall work function, accompanied with enhanced e(-)-nuclei interactions or higher atomic bond strength. Young's modulus and hardness increase correspondingly. However, the free electron density and work function decrease as the Ni content is continuously increased, accompanied with the formation of a second phase, FeNi3, which is softer with a lower work function. The decrease in the overall work function corresponds to deterioration of the mechanical strength of the steel. It is expected that EWF, a simple but fundamental parameter, may lead to new methodologies or supplementary approaches for metallic materials design or tailoring on a feasible electronic base.

  4. The secondary electron emission coefficient of the material for the superconducting cavity input coupler

    CERN Document Server

    Kijima, Y; Furuya, T; Michizono, S I; Mitsunobu, S; Noer, R J

    2002-01-01

    The secondary electron emission (SEE) coefficients have been measured, for materials used in the coupler for KEKB superconducting cavities, i.e. Copper, Stainless steel plated with Copper, Niobium and Ceramic. We show that the electron bombardment is effective in decreasing the SEE coefficient of the metal surfaces, and the TiN coating and window fabrication processes influence the secondary electron yield. (author)

  5. Diverse Electron-Induced Optical Emissions from Space Observatory Materials at Low Temperatures

    Science.gov (United States)

    Dennison, J.R.; Jensen, Amberly Evans; Wilson, Gregory; Dekany, Justin; Bowers, Charles W.; Meloy, Robert

    2013-01-01

    Electron irradiation experiments have investigated the diverse electron-induced optical and electrical signatures observed in ground-based tests of various space observatory materials at low temperature. Three types of light emission were observed: (i); long-duration cathodoluminescence which persisted as long as the electron beam was on (ii) short-duration (affect the performance of space-based observatories.

  6. "Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

    Science.gov (United States)

    Irimia-Vladu, Mihai

    2014-01-21

    "Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

  7. Complex influence of space environment on materials and electronic devices in the conditions of microgravity

    Science.gov (United States)

    Musabayev, T.; Zhantayev, Zh.; Grichshenko, V.

    2016-09-01

    The paper presents a new physical model describing the processes in materials and electronic devices under the influence of cosmic rays in microgravity. The model identifies specific features of formation of the area of radiation defects (ARD) in the electronic materials in microgravity. The mechanism of interaction between the ARD and memory modules in microgravity causing malfunction and failure of onboard electronics is considered. The results of failure of memory modules under real conditions are presented.

  8. Digital image correlation analysis of local strain fields on Ti6Al4V manufactured by electron beam melting

    Energy Technology Data Exchange (ETDEWEB)

    Karlsson, Joakim, E-mail: Joakim.karlsson@sp.se [SP Technical Research Institute of Sweden, Box 857, SE-501 15, Borås (Sweden); Division of Applied Materials Science, Department of Engineering Sciences, Ångström Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Sjögren, Torsten [SP Technical Research Institute of Sweden, Box 857, SE-501 15, Borås (Sweden); Snis, Anders [Arcam AB, Krokslätts fabriker 27 A, SE-431 37, Mölndal (Sweden); Engqvist, Håkan [Division of Applied Materials Science, Department of Engineering Sciences, Ångström Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lausmaa, Jukka [SP Technical Research Institute of Sweden, Box 857, SE-501 15, Borås (Sweden)

    2014-11-17

    Additive manufacturing, or 3D-printing as it is often called, build parts in a layer-by-layer fashion. A common concern, regardless of the specific additive manufacturing technique used, is the risk of inadequate fusion between the adjacent layers which in turn may cause inferior mechanical properties. In this work, the local strain properties of titanium parts produced by Electron Beam Melting (EBM{sup ®}) were studied in order to gain information about the quality of fusion of the stock powder material used in the process. By using Digital Image Correlation (DIC) the strain fields in the individual layers were analyzed, as well as the global strain behavior of the bulk material. The results show that fully solid titanium parts manufactured by EBM are homogenous and do not experience local deformation behavior, neither on local nor on a global level.

  9. Hygroscopic and thermal micro deformations of plastic substrates for flexible electronics using digital image correlation

    NARCIS (Netherlands)

    Berg, D. van den; Barink, M.; Giesen, P.; Meinders, E.R.; Yakimets, I.

    2010-01-01

    Thin polymer substrates are promising materials for flexible electronics with many advantages. However, the dimensional stability of polymer substrates is low. Nowadays, this is overcome by laminating polymer substrates onto a rigid carrier. Nevertheless, carrier-less processing will be a foreseen n

  10. Hygroscopic and thermal micro deformations of plastic substrates for flexible electronics using digital image correlation

    NARCIS (Netherlands)

    Berg, D. van den; Barink, M.; Giesen, P.; Meinders, E.R.; Yakimets, I.

    2011-01-01

    Thin polymer substrates are promising materials for flexible electronics with many advantages. However, the dimensional stability of polymer substrates is low. Nowadays, this is overcome by laminating polymer substrates onto a rigid carrier. Nevertheless, carrier-less processing will be a foreseen n

  11. Oxygen flux and dielectric response study of Mixed Ionic-Electronic Conducting (MIEC) heterogeneous functional materials

    Science.gov (United States)

    Rabbi, Fazle

    Dense mixed ionic-electronic conducting (MIEC) membranes consisting of ionic conductive perovskite-type and/or fluorite-type oxides and high electronic conductive spinel type oxides, at elevated temperature can play a useful role in a number of energy conversion related systems including the solid oxide fuel cell (SOFC), oxygen separation and permeation membranes, partial oxidization membrane reactors for natural gas processing, high temperature electrolysis cells, and others. This study will investigate the impact of different heterogeneous characteristics of dual phase ionic and electronic conductive oxygen separation membranes on their transport mechanisms, in an attempt to develop a foundation for the rational design of such membranes. The dielectric behavior of a material can be an indicator for MIEC performance and can be incorporated into computational models of MIEC membranes in order to optimize the composition, microstructure, and ultimately predict long term membrane performance. The dielectric behavior of the MIECs can also be an indicator of the transport mechanisms and the parameters they are dependent upon. For this study we chose a dual phase MIEC oxygen separation membrane consisting of an ionic conducting phase: gadolinium doped ceria-Ce0.8 Gd0.2O2 (GDC) and an electronic conductive phase: cobalt ferrite-CoFe2O4 (CFO). The membranes were fabricated from mixtures of Nano-powder of each of the phases for different volume percentages, sintered with various temperatures and sintering time to form systematic micro-structural variations, and characterized by structural analysis (XRD), and micro-structural analysis (SEM-EDS). Performance of the membranes was tested for variable partial pressures of oxygen across the membrane at temperatures from 850°C-1060°C using a Gas Chromatography (GC) system. Permeated oxygen did not directly correlate with change in percent mixture. An intermediate mixture 60%GDC-40%CFO had the highest flux compared to the 50%GDC

  12. Development of High-frequency Soft Magnetic Materials for Power Electronics

    Directory of Open Access Journals (Sweden)

    LIU Jun-chang

    2017-05-01

    Full Text Available The new requirements of high-frequency magnetic properties are put forward for electronic components with the rapid development of power electronics industry and the use of new electromagnetic materials. The properties of magnetic core, which is the key unit of electronic components, determine the performance of electronic components directly. Therefore, it's necessary to study the high-frequency soft magnetic materials. In this paper, the development history of four types of soft magnetic materials was reviewed. The advantages and disadvantages of each kind of soft magnetic materials and future development trends were pointed out. The emphases were placed on the popular soft magnetic composite materials in recent years. The tendency is to develop high-frequency soft magnetic composite materials with the particle size controllable, uniform coating layer on the core and a mass production method from laboratory to industrialization.

  13. Ground state of the quasi-1D correlated electronic system BaVS{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Foury-Leylekian, Pascale, E-mail: pascale.foury@u-psud.fr [Laboratoire de Physique des Solides, UMR 8502, CNRS, Universite Paris-Sud, F- 91405, Orsay Cedex (France); Leininger, Philippe [Max-Planck-Insitut furFestkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany); Ilakovac, Vita [LCP-MR, Universite Pierre et Marie Curie, UMR 7614, CNRS, F-75321 Paris, France and Universite Cergy-Pontoise, F-95031, Cergy-Pontoise (France); Joly, Yves [Institut Neel, CNRS-UJF, BP 166, F-38042 Grenoble Cedex 9 (France); Bernu, Sylvain; Fagot, Sebastien; Pouget, Jean-Paul [Laboratoire de Physique des Solides, UMR 8502, CNRS, Universite Paris-Sud, F- 91405, Orsay Cedex (France)

    2012-06-01

    In this paper we review the salient features of the different instabilities exhibited by the quasi-1D system BaVS{sub 3} and show that there is a subtle interplay between the different phases stabilized. The analysis of the Peierls instability shows that the mobile dz Superscript-Two electrons are more localized than calculated because of their strong correlation with the localized e(t{sub 2g}) electrons. The complex AF magnetic structure of BaVS{sub 3} incorporates the magnetization of the e(t{sub 2g}) electrons with the Peierls pairing of the dz Superscript-Two electrons into magnetic singlets. Finally, we propose that the zig-zag disorder remaining after an incomplete orthorhombic phase transition could change the sign of the magnetic coupling and thus help to stabilize the canted ferromagnetism observed in non stoichiometric BaVS{sub 3-{delta}} and Sr and Ba substituted compounds.

  14. Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

    2015-09-15

    Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

  15. Correlation effects on electron-phonon coupling in semiconductors: Many-body theory along thermal lines

    Science.gov (United States)

    Monserrat, Bartomeu

    2016-03-01

    A method is proposed for the inclusion of electron correlation in the calculation of the temperature dependence of band structures arising from electron-phonon coupling. It relies on an efficient exploration of the vibrational phase space along the recently introduced thermal lines. Using the G0W0 approximation, the temperature dependence of the direct gaps of diamond, silicon, lithium fluoride, magnesium oxide, and titanium dioxide is calculated. Within the proposed formalism, a single calculation at each temperature of interest is sufficient to obtain results of the same accuracy as in alternative, more expensive methods. It is shown that many-body contributions beyond semilocal density functional theory modify the electron-phonon coupling strength by almost 50 % in diamond, silicon, and titanium dioxide, but by less than 5 % in lithium flouride and magnesium oxide. The results reveal a complex picture regarding the validity of semilocal functionals for the description of electron-phonon coupling.

  16. Self-consistent implementation of ensemble density functional theory method for multiple strongly correlated electron pairs

    Science.gov (United States)

    Filatov, Michael; Liu, Fang; Kim, Kwang S.; Martínez, Todd J.

    2016-12-01

    The spin-restricted ensemble-referenced Kohn-Sham (REKS) method is based on an ensemble representation of the density and is capable of correctly describing the non-dynamic electron correlation stemming from (near-)degeneracy of several electronic configurations. The existing REKS methodology describes systems with two electrons in two fractionally occupied orbitals. In this work, the REKS methodology is extended to treat systems with four fractionally occupied orbitals accommodating four electrons and self-consistent implementation of the REKS(4,4) method with simultaneous optimization of the orbitals and their fractional occupation numbers is reported. The new method is applied to a number of molecular systems where simultaneous dissociation of several chemical bonds takes place, as well as to the singlet ground states of organic tetraradicals 2,4-didehydrometaxylylene and 1,4,6,9-spiro[4.4]nonatetrayl.

  17. Nuclear quantum and electronic exchange-correlation effects on the high pressure phase diagram of lithium

    Science.gov (United States)

    Clay, Raymond; Morales, Miguel; Bonev, Stanimir

    Lithium at ambient conditions is the simplest alkali metal and exhibits textbook nearly-free electron character. However, increased core/valence electron overlap under compression leads to surprisingly complex behavior. Dense lithium is known to posses a maximum in the melting line, a metal to semiconductor phase transition around 80GPa, reemergent metallicity around 120GPa, and low coordination solid and liquid phases. In addition to its complex electronic structure at high pressure, the atomic mass of lithium is low enough that nuclear quantum effects could have a nontrivial impact on its phase diagram. Through a combination of density functional theory based path-integral and classical molecular dynamics simulations, we have investigated the impact of both nuclear quantum effects and anharmonicity on the melting line and solid phase boundaries. Additionally, we have determined the robustness of previously predicted tetrahedral clustering in the dense liquid to the inclusion of nuclear quantum effects and approximate treatment of electronic exchange-correlation effects.

  18. Final Report: Novel Nanowires as Probes of Electron Coherence and Correlations in Restricted Geometries

    Energy Technology Data Exchange (ETDEWEB)

    Natelson, Douglas

    2005-05-20

    This is a final summary report of the research conducted under DE-FG03-01ER45946, which was a research program using metal nanostructures to examine quantum coherence of electrons in normal and ferromagnetic metals. This program was the PI's first federal research grant, and by augmenting with other funds (Packard Foundation), this grant supported two graduate students during its duration. In normal metal nanostructures, quantum coherence was assessed by two independent techniques: weak localization magnetoresistance, and time-dependent universal conductance fluctuations (TDUCF noise). This work found that, in AuPd nanowires, the coherence information inferred from these two techniques were quantitatively consistent, even in the presence of magnetic impurity and phonon scattering. This confirmed theoretical expectations. However, in Ag and Au wires, the two techniques disagree, with noise measurements indicating a lower coherence length at low temperatures than weak localization. We have a candidate explanation for this, and are finishing these experiments. This work shows that subtleties remain in our understanding of coherence processes even in normal metals, particularly those involving the tunneling two-level systems that produce low frequency noise; this has relevance for quantum information processing implementations using metal devices. We have also studied time-dependent universal conductance fluctuations in ferromagnetic metals for the first time. The TDUCF in ferromagnetic nanowires show that the Cooperon channel of coherent processes is suppressed in these correlated materials. Furthermore, the surprisingly steep temperature dependence of the noise suggests that decoherence in these systems is through a different process than in normal metals. We are finishing measurements of ''magnetofingerprint'' conductance fluctuations in ferromagnetic metals to examine this unusual temperature dependence with an independent technique. This

  19. Correlated Electrons in Two Dimensions: The Fractional Quantum Hall Effect and More

    Science.gov (United States)

    Eisenstein, James

    2014-03-01

    A collection of electrons confined to move on a plane surface is surely one of the simplest many-body systems imaginable. But in spite of this apparent simplicity, a strong magnetic field applied perpendicular to the plane opens a door to a complex and beautiful world filled with many-body exotica. The magnetic field quenches the kinetic energy, leaving Coulomb interactions in control of the physics. The result has been a revolution in many-body physics comparable to that created by the discovery of superconductivity. Incompressible liquid ground states with fractionally charged quasiparticle excitations exhibit the quantized Hall effect at numerous discrete partial fillings of the lowest and first excited Landau level. The first examples of topological condensed matter, these many-body bulk insulators possess complex families of both conducting and neutral edge states at their boundaries. Highly correlated compressible phases of composite fermions also exist and may be viewed as progenitors of the various families of incompressible states. Multi-component two-dimensional systems with active discrete internal degrees of freedom (spin, layer, valley, etc.) display a wide array of broken symmetry states including ferromagnetism and exciton condensation. Now thirty years old, the field generically dubbed ``the fractional quantum Hall effect,'' remains extraordinarily vibrant. Once confined largely to GaAs/AlGaAs heterostructures, the fractional quantum Hall effect and its many relatives and offspring are now pursued in graphene, various oxide interfaces, and other materials. Some of the most fundamental aspects, including the exotic non-abelian quasiparticle statistics expected of some of the more subtle phases, have hardly been touched experimentally even as their potential for applications to quantum computation is alluring. In this talk, I will try to give a flavor of this enormous field, emphasizing current topics and possible future directions.

  20. Determination of Material for Shaft Design Using on Grey Correlation Analysis and TOPSIS Method

    Directory of Open Access Journals (Sweden)

    B. Siva Kumar

    2015-10-01

    Full Text Available Machines, automobiles, aircrafts and many other applications have shaft as major mechanical component which must have a proper design, in-order to have the efficient transmission of power from one element to another. For the design of shaft an appropriate range of evaluation, general product form and processing methods for material must be made. The selection of material should be done by using multiple attribute decision methods (MADM. In this paper, Grey Correlation Analysis and TOPSIS Method is proposed in order to decide a suitable material by considering different attributes and graphical representations are made for different attributes verse materials and vice versa.