Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

International Nuclear Information System (INIS)

McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

1989-01-01

This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.

2010-01-21

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

In-situ TEM investigations of graphic-epitaxy and small particles. Final Report, 1 January-31 December 1982

International Nuclear Information System (INIS)

Heinemann, K.

1983-01-01

Palladium was deposited inside a controlled-vacuum specimen chamber of a transmission electron microscope (TEM) onto MgO and alpha-alumina substrate surfaces. Annealing and various effects of gas exposure of the particulate Pd deposits were studied in-situ by high resolution TEM and electron diffraction. Whereas substrate temperatures of 500 C or annealing of room temperature (RT) deposits to 500 C were needed to obtain epitaxy on sapphire, RT deposits on MgO were perfectly epitaxial. For Pd/MgO a lattice expansion of 2 to 4% was noted the highest values of expansion were found for the smallest particles. The lattice expansion of small Pd particles on alumina substrates was less than 1%. Long-time RT exposure of Pd/MgO in a vacuum yielded some moblity and coalescence events, but notably fewer than for Pd on sapphire. Exposure to air or oxygen greatly enhanced the particle mobility and coalescence and also resulted in the flattening of Pd particles on MgO substrates. Electron-beam irradiation further enhanced this effect. Exposure to air for several tens of hours of Pd/MgO led to strong coalescence

Epitaxy physical principles and technical implementation

CERN Document Server

Herman, Marian A; Sitter, Helmut

2004-01-01

Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

Directory of Open Access Journals (Sweden)

Ge FF

2010-01-01

Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Ogata, K.; Komuro, T.; Hama, K.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.

2004-01-01

Toward the fabrication of enzyme modified field effect transistors (EnFETs) as one of organic/inorganic hybridized structures, surface bonding of the ZnO grown by molecular beam epitaxy was controlled by ex situ treatments. Angle resolved X-ray photoelectron spectroscopy (XPS) measurement revealed that O-H bonds exist at the surface of ZnO. It was found that the number of O-H bond could be changed with reversibility using plasma and thermal treatments

Epitaxial patterning of thin-films: conventional lithographies and beyond

International Nuclear Information System (INIS)

Zhang, Wei; Krishnan, Kannan M

2014-01-01

Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices. (topical review)

Manipulation of Dirac cones in metal-intercalated epitaxial graphene

Science.gov (United States)

Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Energy Technology Data Exchange (ETDEWEB)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-12-15

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

International Nuclear Information System (INIS)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

2015-01-01

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

Growth of epitaxial thin films by pulsed laser ablation

International Nuclear Information System (INIS)

Lowndes, D.H.

1992-01-01

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

Complex Nanostructures by Pulsed Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Noboyuki Koguchi

2011-06-01

Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

Epitaxial growth of CZT(S,Se) on silicon

Science.gov (United States)

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Design of a braze alloy for fast epitaxial brazing of superalloys

Science.gov (United States)

Piegert, S.; Laux, B.; Rösier, J.

2012-07-01

For the repair of directionally solidified turbine components made of nickel-based superalloys, a new high-temperature brazing method has been developed. Utilising heterogeneous nucleation on the crack surface, the microstructure of the base material can be reproduced, i.e. single crystallinity can be maintained. In contrast to commonly used eutectic braze alloys, such as nickel-boron or nickel-silicon systems, the process is not diffusion controlled but works with a consolute binary base system. The currently applied epitaxial brazing methods rely on isothermal solidification diffusing the melting point depressants into the base material until their concentration is reduced so that the liquid braze solidifies. Contrary, the identified Ni-Mn consolute system enables a temperature driven epitaxial solidification resulting in substantially reduced process duration. The development of the braze alloys was assisted using the CALPHAD software Thermo-Calc. The solidification behaviour was estimated by kinetic calculations with realistic boundary conditions. Finally, the complete system, including braze alloy as well as substrate material, was modelled by means of DICTRA. Subsequently, the thermodynamic properties of the braze alloys were experimentally analysed by DSC measurements. For brazing experiments 300 μm wide parallel gaps were used. Complete epitaxial solidification, i.e. the absence of high-angle grain boundaries, could be achieved within brazing times being up to two orders of magnitude shorter compared to diffusion brazing processes. Theoretically and experimentally evaluated process windows reveal similar shapes. However, a distinct shift has to be stated which can be ascribed to the limited accuracy of the underlying thermodynamic databases.

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

Optical Epitaxial Growth of Gold Nanoparticle Arrays.

Science.gov (United States)

Huang, Ningfeng; Martínez, Luis Javier; Jaquay, Eric; Nakano, Aiichiro; Povinelli, Michelle L

2015-09-09

We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm.

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

Synchrotron radiation excited silicon epitaxy using disilane

International Nuclear Information System (INIS)

Akazawa, Housei; Utsumi, Yuichi

1995-01-01

Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

MgO monolayer epitaxy on Ni (100)

Science.gov (United States)

Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

2017-11-01

The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

NARCIS (Netherlands)

Bayraktar, Muharrem; Chopra, A.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

2014-01-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In

Magnetic anisotropy basis sets for epitaxial (110) and (111) REFe2 nanofilms

International Nuclear Information System (INIS)

Bowden, G J; Martin, K N; Fox, A; Rainford, B D; Groot, P A J de

2008-01-01

Magnetic anisotropy basis sets for the cubic Laves phase rare earth intermetallic REFe 2 compounds are discussed in some detail. Such compounds can be either free standing, or thin films grown in either (110) or (111) mode using molecular beam epitaxy. For the latter, it is useful to rotate to a new coordinate system where the z-axis coincides with the growth axes of the film. In this paper, three symmetry adapted basis sets are given, for multi-pole moments up to n = 12. These sets can be used for free-standing compounds and for (110) and (111) epitaxial films. In addition, the distortion of REFe 2 films, grown on sapphire substrates, is also considered. The distortions are different for the (110) and (111) films. Strain-induced harmonic sets are given for both specific and general distortions. Finally, some predictions are made concerning the preferred direction of easy magnetization in (111) molecular beam epitaxy grown REFe 2 films

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Bondi, A.; Cornet, C.; Boyer, S.; Nguyen Thanh, T.; Létoublon, A.; Pedesseau, L.; Durand, O. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR-CNRS n°6251, Université Rennes1, Campus de Beaulieu — 35042 Rennes cedex (France); Ponchet, A. [CEMES, UPR CNRS 8011, F-31055 Toulouse (France); Le Corre, A. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Even, J., E-mail: jacky.even@insa.rennes.fr [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France)

2013-08-31

Raman spectroscopy was used to investigate the residual strain in thin GaP layers deposited on Si substrates by molecular beam epitaxy. Different growth conditions were used to obtain a clean GaP–Si interface, including migration enhanced epitaxy. The strain induced Raman shifts of the longitudinal and the transverse optical GaP lattice modes were analyzed. The effects of crystalline defects are discussed, supported by high resolution transmission electron microscopy and X-ray scattering studies. Finally, Raman Spectroscopy reveals the presence of disorder (or surface)-activated optical phonons. This result is discussed in the light of surface morphology analyses. - Highlights: ► GaP thin layers grown by molecular beam epitaxy on Si substrates. ► Strain-induced Raman shifts of the optical GaP modes are analyzed. ► Simulation of optical GaP modes by density functional perturbation theory. ► Comparison with X-ray diffraction and electron and scanning probe microscopy data.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Fedorov A

2010-01-01

Full Text Available Abstract We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

The origin of local strain in highly epitaxial oxide thin films.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

2013-10-31

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Microwave impedance of epitaxial high-temperature superconductor films

International Nuclear Information System (INIS)

Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

1995-01-01

In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

Fluorination of an epitaxial YBaCuO thin film with controlled oxygen vacancies

Energy Technology Data Exchange (ETDEWEB)

Perrin, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Pena, O. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Mokhtari, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Thivet, C. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Guilloux-Viry, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Perrin, A. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France)); Sergent, M. (Lab. de Chimie du Solide et Inorganique Moleculaire, Univ. de Rennes 1, 35 (France))

1993-05-10

An intentionally oxygen-deficient thin film, epitaxially grown in-situ on a (100) MgO substrate by laser ablation at 750 C under a low pressure oxygen atmosphere, has been treated under NF[sub 3] diluted in N[sub 2] at temperatures not exceeding 280 C. During the fluorination process the epitaxy of the thin film is maintained; its Tc onset progressively increases from 54 K up to 85.6 K and the width of the inductive transition is narrow at the end of treatment (1.2 K). These results are discussed and compared to those obtained during the fluorination of oxygen-deficient YBa[sub 2]Cu[sub 3]O[sub x] ceramics. (orig.)

Controllable factors affecting the epitaxial quality of LaCoO 3 films ...

Indian Academy of Sciences (India)

treatment temperature and a relatively rapid rate of heating can effectively preventnucleus from growing in other orientations, thereby improving the epitaxial quality of film. Besides, the choice of spin speed will directly affect the thickness and ...

Nanoporous Silica Templated HeteroEpitaxy: Final LDRD Report.

Energy Technology Data Exchange (ETDEWEB)

Burckel, David Bruce; Koleske, Daniel; Rowen, Adam M.; Williams, John Dalton; Fan, Hongyou; Arrington, Christian Lew

2006-11-01

This one-year out-of-the-box LDRD was focused on exploring the use of porous growth masks as a method for defect reduction during heteroepitaxial crystal growth. Initially our goal was to investigate porous silica as a growth mask, however, we expanded the scope of the research to include several other porous growth masks on various size scales, including mesoporous carbon, and the UV curable epoxy, SU-8. Use of SU-8 as a growth mask represents a new direction, unique in the extensive literature of patterned epitaxial growth, and presents the possibility of providing a single step growth mask. Additional research included investigation of pore viability via electrochemical deposition into high aspect ratio photoresist patterns and pilot work on using SU-8 as a DUV negative resist, another significant potential result. While the late start nature of this project pushed some of the initial research goals out of the time table, significant progress was made. 3 Acknowledgements This work was performed in part at the Nanoscience @ UNM facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS 03-35765). Sandia is multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United Stated Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000. This work was supported under the Sandia LDRD program (Project 99405). 4

Thin epitaxial silicon detectors

International Nuclear Information System (INIS)

Stab, L.

1989-01-01

Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

KAUST Repository

Shekhah, Osama; Eddaoudi, Mohamed

2013-01-01

Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

International Nuclear Information System (INIS)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah; Patriarche, Gilles; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Heer, Walt A. de; Berger, Claire

2016-01-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Energy Technology Data Exchange (ETDEWEB)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

2016-03-07

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Seed layer technique for high quality epitaxial manganite films

Directory of Open Access Journals (Sweden)

P. Graziosi

2016-08-01

Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

OpenAIRE

Hyoungjeen Jeen; Ho Nyung Lee

2015-01-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model syste...

Epitaxial growth of rhenium with sputtering

Energy Technology Data Exchange (ETDEWEB)

Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

2006-02-21

We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

Science.gov (United States)

Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

2014-09-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

Science.gov (United States)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates

International Nuclear Information System (INIS)

Zhou, H L; Chua, S J; Chow, S Y; Pan, H; Zhu, Y W; Feng, Y P; Wang, L S; Zang, K Y; Liu, W; Tripathy, S

2007-01-01

Using transmission electron microscopy (TEM), the authors have investigated the behavior of threading dislocations in ZnO selectively grown on a facet-controlled epitaxial overgrown GaN template. In this case, the ZnO is grown by a vapor transport method. The TEM study in the overgrown regions shows that all the pure-edge type dislocations in ZnO are parallel toward the mask area and vertical propagation of dislocation to the ZnO surface is minimized. Using such a selective growth technique on a faceted semi-polar GaN surface, a reduction of threading dislocation density in ZnO could be achieved

The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

Science.gov (United States)

Bachmann, Klaus J.

1995-01-01

A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

Strain in epitaxial high-index Bi{sub 2}Se{sub 3}(221) films grown by molecular-beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Li, Bin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Chen, Weiguang [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Guo, Xin; Ho, Wingkin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Jia, Jinfeng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Collaborative Innovation Center of Advanced Microstructures, Department of Physics and Astronomy, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240 (China); Xie, Maohai, E-mail: mhxie@hku.hk [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong)

2017-02-28

Highlights: • High-index, off c-axis, Bi{sub 2}Se{sub 3} has been grown by molecular beam epitaxy on In{sub 2}Se{sub 3}. • A retarded strain relaxation process in such high-index Bi{sub 2}Se{sub 3} is observed, enabling experimentally probe strain effect on topological insulators. • It has been shown by calculation that the Dirac electrons participate in chemical bonding at the heterointerface. - Abstract: High-index Bi{sub 2}Se{sub 3}(221) film has been grown on In{sub 2}Se{sub 3}-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi{sub 2}Se{sub 3}(221) can be attributed to the layered structure of Bi{sub 2}Se{sub 3} crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi{sub 2}Se{sub 3} and In{sub 2}Se{sub 3} by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

Science.gov (United States)

Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

2018-06-06

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

Organometallic vapor-phase epitaxy theory and practice

CERN Document Server

Stringfellow, Gerald B

1989-01-01

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

Science.gov (United States)

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Directory of Open Access Journals (Sweden)

Yu-An Chen

2014-01-01

Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

Science.gov (United States)

Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

2008-02-01

Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

International Nuclear Information System (INIS)

Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

1989-01-01

Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

Epitaxial growth and control of the sodium content in Na{sub x}CoO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Sandra; Komissinskiy, Philipp [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Major, Marton [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); WIGNER RCP, RMKI, H-1525 Budapest, P.O.B. 49 (Hungary); Donner, Wolfgang [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Alff, Lambert, E-mail: alff@oxide.tu-darmstadt.de [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2013-10-31

Single-phase c-axis oriented Na{sub x}CoO{sub 2} thin films were grown on (001) SrTiO{sub 3} single-crystal substrates, using pulsed laser deposition. X-ray diffraction analysis indicates the epitaxial growth of Na{sub x}CoO{sub 2} thin films in two domains, rotated in-plane by 15 and 45 degrees relative to [100] SrTiO{sub 3}. The sodium stoichiometry x of the films can be controlled in a range of 0.38 < x < 0.84 by in-situ post-deposition annealing the Na{sub x}CoO{sub 2} films at 720 – 760 °C in oxygen for 10 – 30 min. γ - Na{sub x}CoO{sub 2} films are obtained with a full width at half maximum of the (002) Na{sub x}CoO{sub 2} rocking curve below 0.2 degrees. The post-deposition annealing can substitute commonly used chemical deintercalation of Na which is typically associated with a loss in crystallinity. - Highlights: • Single phase Na{sub x}CoO{sub 2} thin films grown by pulsed laser deposition • Epitaxial relations of Na{sub x}CoO{sub 2} thin films on (001) SrTiO{sub 3} substrates • Multi-domain thin films • Control of sodium content by in-situ annealing of Na{sub x}CoO{sub 2} thin films.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

Directory of Open Access Journals (Sweden)

Somaschini C

2010-01-01

Full Text Available Abstract We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental procedure that allows the fabrication of individual portions of the structure, controlling their diameter by only changing the substrate temperature. The obtained nanocrystals show a significant anisotropy between [110] and [1–10] crystallographic directions, which can be ascribed to different activation energies for the Ga atoms migration processes.

Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

International Nuclear Information System (INIS)

Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

2015-01-01

A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

International Nuclear Information System (INIS)

Wessels, B.W.

1980-01-01

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

2011-01-01

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

Interface relaxation and band gap shift in epitaxial layers

Directory of Open Access Journals (Sweden)

Ziming Zhu

2012-12-01

Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Controlling the growth of epitaxial graphene on metalized diamond (111) surface

International Nuclear Information System (INIS)

Cooil, S. P.; Wells, J. W.; Hu, D.; Evans, D. A.; Niu, Y. R.; Zakharov, A. A.; Bianchi, M.

2015-01-01

The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp 3 to sp 2 carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 °C, whilst increasing the temperature to 560 °C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level

Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

1987-09-01

We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

Science.gov (United States)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Point defect balance in epitaxial GaSb

International Nuclear Information System (INIS)

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014-01-01

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

BiFeO3 epitaxial thin films and devices: past, present and future

Science.gov (United States)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

Science.gov (United States)

Ye, Ning

Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires

NARCIS (Netherlands)

Sciacca, Beniamino; Mann, Sander A.; Tichelaar, Frans D.; Zandbergen, Henny W.; Van Huis, Marijn A.; Garnett, Erik C.

2014-01-01

The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here

Molecular beam epitaxy for the future

International Nuclear Information System (INIS)

Takahashi, K.

1984-01-01

Molecular beam epitaxy (MBE) is most commonly used to fabricate super-lattices, high electron mobility transistors, multi-quantum well lasers and other new semiconductor devices by utilizing its excellent controlability. MBE for the future is presumed to include techniques such as metalorganic chemical vapor deposition, photochemical reaction process using gas sources and ion implantation. A report on the crystal growth of GaAs using metalorganics, trimethylgallium and triethylgallium, which are usually used in chemical vapor deposition, as gaseous sources of gallium in an MBE system is made. (Author) [pt

All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

2016-01-28

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

Coupled quantum dot-ring structures by droplet epitaxy

International Nuclear Information System (INIS)

Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S

2011-01-01

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films.

Science.gov (United States)

Kaspar, Tiffany C; Hong, Seungbum; Bowden, Mark E; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R; Comes, Ryan B; Ramuhalli, Pradeep; Henager, Charles H

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200 °C due to the low Curie temperature of the piezoelectric material. Strengthening the piezoelectric coupling of high-temperature piezoelectric materials, such as La 2 Ti 2 O 7 (LTO), would allow sensors to operate across a broad temperature range. The crystalline orientation and piezoelectric coupling direction of LTO thin films can be controlled by epitaxial matching to SrTiO 3 (001), SrTiO 3 (110), and rutile TiO 2 (110) substrates via pulsed laser deposition. The structure and phase purity of the films are investigated by x-ray diffraction and scanning transmission electron microscopy. Piezoresponse force microscopy is used to measure the in-plane and out-of-plane piezoelectric coupling in the films. The strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO 2 (110) results in epitaxial La 2/3 TiO 3 , an orthorhombic perovskite of interest as a microwave dielectric material and an ion conductor. La 2/3 TiO 3 can be difficult to stabilize in bulk form, and epitaxial stabilization on TiO 2 (110) is a promising route to realize La 2/3 TiO 3 for both fundamental studies and device applications. Overall, these results confirm that control of the crystalline orientation of epitaxial LTO-based materials can govern the resulting functional properties.

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0 �

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

Science.gov (United States)

Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

Reclamation of a molecular beam epitaxy system and conversion for oxide epitaxy

International Nuclear Information System (INIS)

Carver, Alexander G.; Henderson, Walter; Doolittle, W. Alan

2008-01-01

An early 1980s vintage molecular beam epitaxy system, a Varian Gen II system, originally used for HgCdTe epitaxy, was converted into a system capable of growing thin-film complex metal oxides. The nature of some of the alternative oxides requires a thorough cleaning and, in some cases, complete replacement of system components. Details are provided regarding the chemistry of the etchants used, safety requirements for properly handling, and disposal of large quantities of etchants and etch by-products, and components that can be reused versus components that require replacement are given. Following the given procedures, an ultimate base pressure of 2x10 -10 Torr was obtained. Films grown in the system after reclamation contained no evidence of previously present materials down to the detection limit of secondary ion mass spectrometry

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

International Nuclear Information System (INIS)

Chen, S.Y.; Chen, L.J.

2006-01-01

Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

Molecular beam epitaxy a short history

CERN Document Server

Orton, J W

2015-01-01

This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

Science.gov (United States)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

Science.gov (United States)

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Advanced in-situ control for III-nitride RF power device epitaxy

Science.gov (United States)

Brunner, F.; Zettler, J.-T.; Weyers, M.

2018-04-01

In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

International Nuclear Information System (INIS)

Chien, C.J.; Bravman, J.C.

1990-01-01

The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

Shaping metal nanocrystals through epitaxial seeded growth

Energy Technology Data Exchange (ETDEWEB)

Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

2008-02-17

Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

Science.gov (United States)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

Energy Technology Data Exchange (ETDEWEB)

Kaspar, Tiffany C.; Hong, Seungbum; Bowden, Mark E.; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R.; Comes, Ryan B.; Ramuhalli, Pradeep; Henager, Charles H.

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-ray diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.

High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

NARCIS (Netherlands)

Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

2013-01-01

We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

International Nuclear Information System (INIS)

Krockenberger, Y.

2006-01-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

Energy Technology Data Exchange (ETDEWEB)

Krockenberger, Y.

2006-07-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

Science.gov (United States)

Jeen, Hyoungjeen; Lee, Ho Nyung

2015-12-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

Directory of Open Access Journals (Sweden)

Hyoungjeen Jeen

2015-12-01

Full Text Available Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx epitaxially grown by pulsed laser epitaxy (PLE as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ. We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

International Nuclear Information System (INIS)

Thiele, U

2010-01-01

In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

Abstracts of 4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology

International Nuclear Information System (INIS)

2001-01-01

4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology is the periodically held forum for discussion the problems connected with manufacturing of different nanostructures (thin films, quantum wells, quantum dots) needed in microelectronics. Preparation of such materials with desirable optical, electrical and magnetic properties being determined by their chemical composition and crystal structure has been discussed in detail during the workshop sessions. Optimization of crystal growth methods such as VPE and MBE from the view point of obtained material properties has also been extensively discussed

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

2007-01-01

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-01

Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films.

Science.gov (United States)

Lu, Zengxing; Li, Peilian; Wan, Jian-Guo; Huang, Zhifeng; Tian, Guo; Pan, Danfeng; Fan, Zhen; Gao, Xingsen; Liu, Jun-Ming

2017-08-16

Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO 3 (T-BFO) films by the pulsed laser deposition technique. The polarization-dependent photocurrent image was directly observed by a conductive atomic force microscope under ultraviolet illumination. By choosing a suitable buffer electrode layer and controlling the ferroelectric polarization in the T-BFO layer, we realized the manipulation of the photovoltaic process. Moreover, based on the analysis of the band structure, we revealed the mechanism of manipulating the photovoltaic process and attributed it to the competition between two key factors, i.e., the internal electric field caused by energy band alignments at interfaces and the depolarization field induced by the ferroelectric polarization in T-BFO. This work is very meaningful for deeply understanding the photovoltaic process of BiFeO 3 -based devices at the microscale and provides us a feasible avenue for developing data storage or logic switching microdevices based on the FePV effect.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

Science.gov (United States)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

Science.gov (United States)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

2007-01-01

SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive

Growth and characterization of Hg 1– Cd Te epitaxial films by ...

Indian Academy of Sciences (India)

Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya

2017-05-10

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

2017-01-01

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

International Nuclear Information System (INIS)

Szeles, C.; Asoka-Kumar, P.; Lynn, K.G.; Gossmann, H.; Unterwald, F.C.; Boone, T.

1995-01-01

The depth distribution of open-volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 degree C by the variable-energy monoenergetic positron beam technique combined with well-controlled chemical etching. This procedure gave a 10 nm depth resolution which is a significant improvement over the inherent depth resolving power of the positron beam technique. The epitaxial layer was found to grow defect-free up to 80 nm, from the interface, where small vacancy clusters, larger than divacancies, appear. The defect density then sharply increases toward the film surface. The result clearly shows that the nucleation of small open-volume defects is a precursor state to the breakdown of epitaxy and to the evolution of an amorphous film

FY 1997 report on the study on lamination control technology for functional multi-element oxide thin films by complex beam epitaxy (CxBE) process; 1997 nendo chosa hokokusho (sakutaisen epitaxy (CxBE) ho ni yoru kinosei tagenso sankabutsu usumaku no sekiso seigyo gijutsu ni kansuru kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Complex beam epitaxy (CxBE) process was proposed and demonstrated as new deposition process of multi-element oxide thin films. This process radiates excimer laser onto a metal complex target of ethylenediamine-tetraacetate complex under reduced pressure oxygen atmosphere condition in a reaction vessel to supply raw material onto a heated substrate. This process allowed deposition of YBCO123 phase hetero-epitaxial film onto a single-crystalline SrTiO3 substrate. This process was proved to be promising through study on crystal orientation, composition transcription and surface smoothness of the obtained oxide thin films. In addition, epitaxial ZnO film was also deposited onto a single crystalline Al2O3 substrate by this process. The relation between the obtained film and substrate epitaxy was examined, and photoluminescence of specimens was measured by triple wave of Nd:YAG laser. As a result, it was clarified that the epitaxial ZnO film prepared by this process is useful as laser material. 60 refs., 48 figs., 5 tabs.

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Science.gov (United States)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

DEFF Research Database (Denmark)

Liu, Guangqing; Zhang, Qi; Huang, Hsin-Hui

2016-01-01

Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3...... large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design...... and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties....

New synthesis method for the growth of epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Yu, X.Z. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China); Hwang, C.G.; Jozwiak, C.M.; Koehl, A. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Schmid, A.K. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94709 (United States); Lanzara, A., E-mail: ALanzara@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-04-15

Highlights: {yields} We report a new straightforward method for the synthesis of micrometer scale graphene sheets. {yields} The process is based on a face to face mehtod in which two SiC substrates are placed one on top of the other and are heated simultaneously, leading to highly homogeneous samples. {yields} The number of graphene layers is determined by the annealing temperature. - Abstract: As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely 'face-to-face' method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover, the graphene thickness can be easily controlled by changing annealing temperature.

Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

International Nuclear Information System (INIS)

Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

2010-01-01

We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

Croissance epitaxiale de GaAs sur substrats de Ge par epitaxie par faisceaux chimiques

Science.gov (United States)

Belanger, Simon

de confirmer l'efficacite du procede de preparation de surface et d'identifier les conditions de croissance optimales. Les resultats de caracterisation indiquent que les materiaux obtenus presentent une tres faible rugosite de surface, une bonne qualite cristalline et un dopage residuel relativement important. De plus, l'interface GaAs/Ge possede une faible densite de defauts. Finalement, la diffusion d'arsenic dans le substrat de germanium est comparable aux valeurs trouvees dans la litterature pour la croissance a basse temperature avec les autres procedes d'epitaxie courants. Ces resultats confirment que la technique d'epitaxie par faisceaux chimiques (CBE) permet de produire des couches de GaAs sur Ge de qualite adequate pour la fabrication de cellules solaires a haute performance. L'apport a la communaute scientifique a ete maximise par le biais de la redaction d'un article soumis a la revue Journal of Crystal Growth et la presentation des travaux a la conference Photovoltaics Canada 2010 . Mots-cles : Epitaxie par jets chimiques, Chemical beam epitaxy, CBE, MOMBE, Germanium, GaAs, Ge

Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

Science.gov (United States)

Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

2014-10-28

Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2014-02-01

Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

2016-09-15

Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

Science.gov (United States)

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

Directory of Open Access Journals (Sweden)

Koustav Ganguly

2017-05-01

Full Text Available The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n relation. These are addressed here through a transport study of BaSnO3(001 films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

International Nuclear Information System (INIS)

Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

2002-01-01

Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

Growth and characterization of Hg1–xCdxTe epitaxial films by ...

Indian Academy of Sciences (India)

Unknown

Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

Structural evolution of epitaxial SrCoO{sub x} films near topotactic phase transition

Energy Technology Data Exchange (ETDEWEB)

Jeen, Hyoungjeen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics, Pusan National University, Busan, 609735 (Korea, Republic of); Lee, Ho Nyung, E-mail: hnlee@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2015-12-15

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoO{sub x}) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO{sub 2.5} thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO{sub 3-δ}). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

Directory of Open Access Journals (Sweden)

Chuanwei Huang

2014-07-01

Full Text Available In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

Epitaxial growth of Ge-Sb-Te based phase change materials

Energy Technology Data Exchange (ETDEWEB)

Perumal, Karthick

2013-07-30

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Energy Technology Data Exchange (ETDEWEB)

Idigoras, O., E-mail: o.idigoras@nanogune.eu; Suszka, A. K.; Berger, A. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian (Spain); Vavassori, P. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian (Spain); IKERBASQUE, The Basque Foundation for Science, E-48011 Bilbao (Spain); Obry, B.; Hillebrands, B. [Fachbereich Physik and Landesforschungzentrum OPTIMAS, Technische Universität Kaiserslautern, Erwin-Schrödinger-Straße 56, D-67663 Kaiserslautern (Germany); Landeros, P. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparaíso (Chile)

2014-02-28

This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

Microwave dynamics of YBCO bi-epitaxial Josephson structures

DEFF Research Database (Denmark)

Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

1996-01-01

The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Science.gov (United States)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

KAUST Repository

Li, Ming Yang

2015-07-30

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

The epitaxial growth and interfacial strain study of VO{sub 2}/MgF{sub 2} (001) films by synchrotron based grazing incidence X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Fan, L.L. [Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Chen, S. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Liu, Q.H. [Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300 (China); Liao, G.M.; Chen, Y.L.; Ren, H. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Zou, C.W., E-mail: czou@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

2016-09-05

High quality VO{sub 2} films with different thickness were epitaxially grown on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. The evolution of interfacial strain was investigated by synchrotron based grazing incidence X-ray diffraction. By adjusting the incidence angles, the penetration depth of X-ray in VO{sub 2} film could be controlled and the thickness-depend lattice distortion in the epitaxial VO{sub 2} film was investigated. Due to the lattice mismatching, the pronounced tensile strain was observed in ultra-thin VO{sub 2} film. As the film thickness increasing, the interfacial strain relaxed gradually and became fully relaxed for thick VO{sub 2} films. Combined with the electric transport measurement, it was revealed that the phase transition temperature of ultra-thin VO{sub 2} film decreased greatly. The effect of interfacial strain induced phase transition modulation and the intrinsic mechanism was systematically discussed. - Highlights: • We prepared high quality VO{sub 2} epitaxial films on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. • Synchrotron radiation grazing incidence X-ray diffraction was employed to detect evolution of strain along depth profile. • Based on a classic band structure model, the mechanism of strain controlled phase transition of VO{sub 2} was discussed.

Epitaxial Ni films, e-beam nano-patterning and BMR

Science.gov (United States)

Lukaszew, R. Alejandra; Zhang, Zhengdong; Pearson, Dave; Zambano, Antonio

2004-05-01

We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts.

Epitaxial Ni films, e-beam nano-patterning and BMR

International Nuclear Information System (INIS)

Lukaszew, R.A.; Zhang Zhengdong; Pearson, Dave; Zambano, Antonio

2004-01-01

We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts

Abnormal growth kinetics of h-BN epitaxial monolayer on Ru(0001) enhanced by subsurface Ar species

Science.gov (United States)

Wei, Wei; Meng, Jie; Meng, Caixia; Ning, Yanxiao; Li, Qunxiang; Fu, Qiang; Bao, Xinhe

2018-04-01

Growth kinetics of epitaxial films often follows the diffusion-limited aggregation mechanism, which shows a "fractal-to-compact" morphological transition with increasing growth temperature or decreasing deposition flux. Here, we observe an abnormal "compact-to-fractal" morphological transition with increasing growth temperature for hexagonal boron nitride growth on the Ru(0001) surface. The unusual growth process can be explained by a reaction-limited aggregation (RLA) mechanism. Moreover, introduction of the subsurface Ar atoms has enhanced this RLA growth behavior by decreasing both reaction and diffusion barriers. Our work may shed light on the epitaxial growth of two-dimensional atomic crystals and help to control their morphology.

Radical-source molecular beam epitaxy of ZnO-based heterostructures

Energy Technology Data Exchange (ETDEWEB)

Sadofiev, Sergey

2009-10-27

This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

International Nuclear Information System (INIS)

Riedl, C; Coletti, C; Starke, U

2010-01-01

Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This paper reviews the controlled growth of epitaxial graphene layers on SiC(0 0 0 1) and the manipulation of their electronic structure. We show that epitaxial graphene on SiC grows on top of a carbon interface layer that-although it has a graphite-like atomic structure-does not display the linear π-bands typical for graphene due to a strong covalent bonding to the substrate. Only the second carbon layer on top of this interface acts like monolayer graphene. With a further carbon layer, a graphene bilayer system develops. During the growth of epitaxial graphene on SiC(0 0 0 1) the number of graphene layers can be precisely controlled by monitoring the π-band structure. Experimental fingerprints for in situ growth control could be established. However, due to the influence of the interface layer, epitaxial graphene on SiC(0 0 0 1) is intrinsically n-doped and the layers have a long-range corrugation in their density of states. As a result, the Dirac point energy where the π-bands cross is shifted away from the Fermi energy, so that the ambipolar properties of graphene cannot be exploited. We demonstrate methods to compensate and eliminate this structural and electronic influence of the interface. We show that the band structure of epitaxial graphene on SiC(0 0 0 1) can be precisely tailored by functionalizing the graphene surface with tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) molecules. Charge neutrality can be achieved for mono- and bilayer graphene. On epitaxial bilayer graphene, where a band gap opens due to the asymmetric electric field across the layers imposed by the interface, the magnitude of this band gap

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Characterization of GaN/AlGaN epitaxial layers grown

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

2016-07-25

Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

Energy Technology Data Exchange (ETDEWEB)

Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

2014-10-13

We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

Directory of Open Access Journals (Sweden)

O. G. Ibarra-Manzano

2012-02-01

Full Text Available Optical spectra of light reflection are detected under an influence of ultrasonic wave (UWon a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR spectrum contains some bands that represent the energetic levels of the shallow centers in a sample. A physical basis of this technique is related to a perturbation of local states by UW. Here, a method is developed for characterization of local states at the surfaces and interfaces in crystals and low-dimensional epitaxial structures based on microelectronics materials. A theoretical model is presented to explain AODR spectra. Also, experiments using epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimental results show that acousto-optic reflectance is an effective tool for characterization of shallow trapping centers in epitaxial semiconductor structures.En este trabajo, utilizamos el espectro de la luz reflejada en una muestra de Arsenuro de Galio (GaAs bajo la influencia de una onda ultrasónica. El diferencial espectral es calculado como una diferencia entre el espectro del material obtenido bajo la influencia del ultrasonido y aquél obtenido sin dicha influencia. Este diferencial de reflectancia espectral acusto-óptico (AODR contiene algunas bandas que representan los niveles energéticos de los centros en la superficie de la muestra. Esta técnica está basada en la perturbación de los estados locales generada por el ultrasonido. Particularmente, este trabajo presenta un método para caracterizar los estados locales en la superficie y las interfaces en los cristales, así como estructuras epiteliales de baja dimensión basadas en materiales semiconductores. Para ello, se presenta un modelo teórico para explicar dicho espectro de reflectancia diferencial (AODR. También se realizaron experimentos con estructuras de GaAs epitelial

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

Energy Technology Data Exchange (ETDEWEB)

Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2016-04-07

Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.

Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

Energy Technology Data Exchange (ETDEWEB)

Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

2017-05-01

Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

International Nuclear Information System (INIS)

Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

2017-01-01

Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO_2 and NH_3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10"1"3 ions/cm"2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

Surface Reaction Kinetics of Ga(1-x)In(x)P Growth During Pulsed Chemical Beam Epitaxy

National Research Council Canada - National Science Library

Dietz, N; Beeler, S. C; Schmidt, J. W; Tran, H. T

2000-01-01

... into the surface reaction kinetics during an organometallic deposition process. These insights will allow us to move the control point closer to the point where the growth occurs, which in a chemical been epitaxy process is a surface reaction layer (SRL...

Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

CSIR Research Space (South Africa)

Venkatasamy, V

2006-04-01

Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.; Buckley, M. R.; Gerbode, S. J.; Cohen, I.

2010-01-01

-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Science.gov (United States)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

2018-04-01

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

International Nuclear Information System (INIS)

Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

1980-01-01

To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Science.gov (United States)

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

2016-10-30

Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

Science.gov (United States)

Tong, C Z; Yoon, S F

2008-09-10

We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

On the density of states of disordered epitaxial graphene

International Nuclear Information System (INIS)

Davydov, S. Yu.

2015-01-01

The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

Science.gov (United States)

Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

2018-01-01

We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

Epitaxial Growth of Hetero-Ln-MOF Hierarchical Single Crystals for Domain- and Orientation-Controlled Multicolor Luminescence 3D Coding Capability.

Science.gov (United States)

Pan, Mei; Zhu, Yi-Xuan; Wu, Kai; Chen, Ling; Hou, Ya-Jun; Yin, Shao-Yun; Wang, Hai-Ping; Fan, Ya-Nan; Su, Cheng-Yong

2017-11-13

Core-shell or striped heteroatomic lanthanide metal-organic framework hierarchical single crystals were obtained by liquid-phase anisotropic epitaxial growth, maintaining identical periodic organization while simultaneously exhibiting spatially segregated structure. Different types of domain and orientation-controlled multicolor photophysical models are presented, which show either visually distinguishable or visible/near infrared (NIR) emissive colors. This provides a new bottom-up strategy toward the design of hierarchical molecular systems, offering high-throughput and multiplexed luminescence color tunability and readability. The unique capability of combining spectroscopic coding with 3D (three-dimensional) microscale spatial coding is established, providing potential applications in anti-counterfeiting, color barcoding, and other types of integrated and miniaturized optoelectronic materials and devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial growth of hetero-Ln-MOF hierarchical single crystals for domain- and orientation-controlled multicolor luminescence 3D coding capability

International Nuclear Information System (INIS)

Pan, Mei; Zhu, Yi-Xuan; Wu, Kai; Chen, Ling; Hou, Ya-Jun; Yin, Shao-Yun; Wang, Hai-Ping; Fan, Ya-Nan; Su, Cheng-Yong

2017-01-01

Core-shell or striped heteroatomic lanthanide metal-organic framework hierarchical single crystals were obtained by liquid-phase anisotropic epitaxial growth, maintaining identical periodic organization while simultaneously exhibiting spatially segregated structure. Different types of domain and orientation-controlled multicolor photophysical models are presented, which show either visually distinguishable or visible/near infrared (NIR) emissive colors. This provides a new bottom-up strategy toward the design of hierarchical molecular systems, offering high-throughput and multiplexed luminescence color tunability and readability. The unique capability of combining spectroscopic coding with 3D (three-dimensional) microscale spatial coding is established, providing potential applications in anti-counterfeiting, color barcoding, and other types of integrated and miniaturized optoelectronic materials and devices. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial growth of hetero-Ln-MOF hierarchical single crystals for domain- and orientation-controlled multicolor luminescence 3D coding capability

Energy Technology Data Exchange (ETDEWEB)

Pan, Mei; Zhu, Yi-Xuan; Wu, Kai; Chen, Ling; Hou, Ya-Jun; Yin, Shao-Yun; Wang, Hai-Ping; Fan, Ya-Nan [MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-Sen University, Guangzhou (China); Su, Cheng-Yong [MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-Sen University, Guangzhou (China); State Key Laboratory of Applied Organic Chemistry, Lanzhou University, Lanzhou (China)

2017-11-13

Core-shell or striped heteroatomic lanthanide metal-organic framework hierarchical single crystals were obtained by liquid-phase anisotropic epitaxial growth, maintaining identical periodic organization while simultaneously exhibiting spatially segregated structure. Different types of domain and orientation-controlled multicolor photophysical models are presented, which show either visually distinguishable or visible/near infrared (NIR) emissive colors. This provides a new bottom-up strategy toward the design of hierarchical molecular systems, offering high-throughput and multiplexed luminescence color tunability and readability. The unique capability of combining spectroscopic coding with 3D (three-dimensional) microscale spatial coding is established, providing potential applications in anti-counterfeiting, color barcoding, and other types of integrated and miniaturized optoelectronic materials and devices. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial stabilization of ordered Pd–Fe structures on perovskite substrates

Energy Technology Data Exchange (ETDEWEB)

Harton, Renee M., E-mail: reneehar@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States); Stoica, Vladimir A. [Department of Materials Science and Engineering, Pennsylvania State University, 201 Old Main, University Park, PA 16802 (United States); Clarke, Roy [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States)

2017-05-01

We report the fabrication of epitaxial ferromagnetic Pd{sub 3}Fe thin films on SrTiO{sub 3}(001) substrates by promoting the interdiffusion of an Fe/Pd multilayer heterostructure using thermal annealing. Prior to annealing, the results of in-situ Reflection High-Energy Electron Diffraction characterization suggest that each Fe and Pd layer exhibited an in-plane epitaxial relationship with the SrTiO{sub 3}(001) substrate. X-Ray diffraction and magneto-optic Kerr effect characterization, conducted post-annealing, demonstrate that the film composition is majority Pd{sub 3}Fe and exhibits in-plane magnetization reversal with a moderate coercive field of ≈760 Oe. This demonstration of an ordered atomic layer heterostructure grown on a perovskite substrate suggests a route to epitaxial interfacial structures which can achieve strain-assisted magnetic switching.

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

International Nuclear Information System (INIS)

Shin, Byungha; Aziz, Michael J.

2007-01-01

We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown

Crystalline and electronic structure of epitaxial γ-Al2O3 films

International Nuclear Information System (INIS)

Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

2013-01-01

Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

In-situ TEM investigations of graphic-epitaxy and small particles

Science.gov (United States)

Heinemann, K.

1983-01-01

Palladium was deposited inside a controlled-vacuum specimen chamber of a transmission electron microscope (TEM) onto MgO and alpha-alumina substrate surfaces. Annealing and various effects of gas exposure of the particulate Pd deposits were studied in-situ by high resolution TEM and electron diffraction. Whereas substrate temperatures of 500 C or annealing of room temperature (RT) deposits to 500 C were needed to obtain epitaxy on sapphire, RT deposits on MgO were perfectly epitaxial. For Pd/MgO a lattice expansion of 2 to 4% was noted; the highest values of expansion were found for the smallest particles. The lattice expansion of small Pd particles on alumina substrates was less than 1%. Long-time RT exposure of Pd/MgO in a vacuum yielded some moblity and coalescence events, but notably fewer than for Pd on sapphire. Exposure to air or oxygen greatly enhanced the particle mobility and coalescence and also resulted in the flattening of Pd particles on MgO substrates. Electron-beam irradiation further enhanced this effect. Exposure to air for several tens of hours of Pd/MgO led to strong coalescence.

Twenty years of molecular beam epitaxy

Science.gov (United States)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

Epitaxial ternary nitride thin films prepared by a chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

International Nuclear Information System (INIS)

Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

2015-01-01

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

2015-02-15

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

Science.gov (United States)

Berry Ann, N. J.; Rodak, L. E.; Kasarla, Kalyan; Yang, Nanying; Korakakis, D.

2005-10-01

In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.

Electronic properties of epitaxial 6H silicon carbide

International Nuclear Information System (INIS)

Wessels, B.W.; Gatos, H.C.

1977-01-01

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Science.gov (United States)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100/Si(100 substrates

Directory of Open Access Journals (Sweden)

Gogneau N

2014-09-01

Full Text Available Noelle Gogneau,1 Amira Ben Gouider Trabelsi,2 Mathieu G Silly,3 Mohamed Ridene,1 Marc Portail,4 Adrien Michon,4 Mehrezi Oueslati,2 Rachid Belkhou,3 Fausto Sirotti,3 Abdelkarim Ouerghi1 1Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, Marcoussis, France; 2Unité des Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Université de Tunis El Manar Campus Universitaire, Tunis, Tunisia; 3Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France; 4Centre de Recherche sur l'HétéroEpitaxie et Ses Application, Centre National de la Recherche Scientifique, Valbonne, France Abstract: Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100 epilayers grown by chemical vapor deposition on Si(100 substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100/Si(100 are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. Keywords: epitaxial graphene, electronic properties, structural properties, silicon carbide 

Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

International Nuclear Information System (INIS)

Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

2003-01-01

An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, Lars; Hallam, Toby; Curson, Neil J.; Simmons, Michelle Y.; Clark, Robert G

2003-05-15

We investigate the morphology of epitaxial Si layers grown on clean and on hydrogen terminated Si(0 0 1) to explore the growth strategy for the fabrication of a Si-based quantum computer. We use molecular beam epitaxy to deposit 5 monolayers of silicon at a temperature of 250 deg. C and scanning tunnelling microscopy to image the surface at room temperature after growth and after various rapid annealing steps in the temperature range of 350-600 deg. C. The epitaxial layer grown on the hydrogenated surface shows a significantly higher surface roughness due to a lower mobility of silicon surface atoms in the presence of hydrogen. Annealing at temperatures {>=}550 deg. C reduces the roughness of both epitaxial layers to the value of a clean silicon surface. However, the missing dimer defect density of the epitaxial layer grown on the hydrogenated surface remains higher by a factor of two compared to the layer grown on clean Si(0 0 1). Our results suggest a quantum computer growth strategy in which the hydrogen resist layer is desorbed before the epitaxial silicon layer is grown at low temperature to encapsulate phosphorus quantum bits.

From epitaxial growth of ferrite thin films to spin-polarized tunnelling

International Nuclear Information System (INIS)

Moussy, Jean-Baptiste

2013-01-01

This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

Science.gov (United States)

Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

Interface manipulation in GaxIn1-xAs/InP multiple layer structures grown by chemical beam epitaxy

NARCIS (Netherlands)

Rongen, R.T.H.; van Rijswijk, A.J.C.; Leijs, M.R.; Es, van C.M.; Vonk, H.; Wolter, J.H.

1997-01-01

In this study the control of interfacial layers in nanometre thin heterostructures is demonstrated by variation of the growth interruption sequence (GIS) at the binary - ternary interfaces. All samples have been prepared by chemical beam epitaxy simultaneously growing the structures on exact (100)

Multifunctional epitaxial systems on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968 (United States); Prater, John Thomas [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-09-15

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

KAUST Repository

Duan, X. F.

2013-01-08

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

International Nuclear Information System (INIS)

Lee, Chao-Kuei; Lin, Yuan-Yao; Lin, Sung-Hui; Lin, Gong-Ru; Pan, Ci-Ling

2014-01-01

Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

2015-01-01

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Laser molecular beam epitaxy of ZnO thin films and heterostructures

International Nuclear Information System (INIS)

Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

2014-01-01

We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

Defect formation and carrier doping in epitaxial films of the ''parent'' compound SrCuO2: Synthesis of two superconductors descendants

International Nuclear Information System (INIS)

Feenstra, R.; Norton, D.P.; Budai, J.D.; Jones, E.C.; Christen, D.K.; Kawai, T.

1995-04-01

The infinite layer or parent compounds ACuO 2 (A: Ca-Sr-Ba) constitute the simplest copper oxygen perovskites that contain the CuO 2 sheets essential for superconductivity. The stabilization of these basic ''building blocks'' as epitaxial films, therefore, provides alluring opportunities towards the search for new superconducting compounds and elucidation of the underlying mechanisms. In this work, general trends of the defect formation and carrier doping for epitaxial films of the intermediate endmember SrCuO 2 are reviewed. First results are presented from successful attempts to induce hole-doped superconductivity via the processing-controlled incorporation of charge reservoir layers

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

International Nuclear Information System (INIS)

Huang Li; Xu Wen-Yan; Que Yan-De; Mao Jin-Hai; Meng Lei; Pan Li-Da; Li Geng; Wang Ye-Liang; Du Shi-Xuan; Gao Hong-Jun; Liu Yun-Qi

2013-01-01

Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. (topical review - low-dimensional nanostructures and devices)

Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

2015-01-01

LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

Science.gov (United States)

Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

2018-06-01

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

International Nuclear Information System (INIS)

Schlom, D.G.; Merritt, B.A.; Madhavan, S.

1997-01-01

The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

Science.gov (United States)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2014-04-15

breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

International Nuclear Information System (INIS)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

2014-01-01

breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution

Layered growth model and epitaxial growth structures for SiCAlN alloys

International Nuclear Information System (INIS)

Liu Zhaoqing; Ni Jun; Su Xiaoao; Dai Zhenhong

2009-01-01

Epitaxial growth structures for (SiC) 1-x (AlN) x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=1/6 ,1/5 ,1/4 ,1/3 , and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAlN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC) 1-x (AlN) x alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth.

Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

Directory of Open Access Journals (Sweden)

J. Wu

2015-06-01

Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-08-15

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

International Nuclear Information System (INIS)

Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

2015-01-01

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Hard gap in epitaxial semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Chang, W.; Albrecht, S. M.; Jespersen, T. S.

2015-01-01

a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

The influence of Fe doping on the surface topography of GaN epitaxial material

International Nuclear Information System (INIS)

Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

2015-01-01

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

Epitaxial Garnets and Hexagonal Ferrites.

Science.gov (United States)

1982-04-20

guide growth of the epitaxial YIG films. Aluminum or gallium substitu- tions for iron were used in combination with lanthanum substitutions for yttrium... gallate spinel sub- strates. There was no difficulty with nucleation in the melt and film quality appeared to be similar to that observed previously...hexagonal ferrites. We succeeded in growing the M-type lead hexaferrite (magnetoplumbite) on gallate spinel substrates. We found that the PbO-based

Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

Science.gov (United States)

2018-02-19

AFRL-AFOSR-JP-TR-2018-0012 Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures PHILIP Kim HARVARD COLLEGE PRESIDENT...21-02-2018 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      15 Aug 2015 to 14 Feb 2017 4.  TITLE AND SUBTITLE Nano Electronics on...NOTES 14.  ABSTRACT We report molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films

Graphene nanoribbons epitaxy on boron nitride

Energy Technology Data Exchange (ETDEWEB)

Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2016-03-14

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Epitaxial growth by monolayer restricted galvanic displacement

Directory of Open Access Journals (Sweden)

Vasilić Rastko

2012-01-01

Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

KAUST Repository

Wang, Ping

2015-12-22

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

Directory of Open Access Journals (Sweden)

Abe Shunsuke

2010-01-01

Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

International Nuclear Information System (INIS)

Suemasu, T.; Takakura, K.; Li, Cheng; Ozawa, Y.; Kumagai, Y.; Hasegawa, F.

2004-01-01

In this paper, we review the detailed study of epitaxial growth of β-FeSi 2 films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi 2 was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi 2 epitaxial films reached 6900 and 13000 cm 2 /V·s for the n- and p-type β-FeSi 2 , respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi 2 particles/n-Si structures prepared by RDE for β-FeSi 2 and by MBE for Si

Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

International Nuclear Information System (INIS)

Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

2013-01-01

Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

Science.gov (United States)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo; Dalmiglio, Matteo; Orlando, Fabrizio; Baraldi, Alessandro; Gammelgaard, Lauge; Barreto, Lucas; Bianchi, Marco; Perkins, Edward; Hofmann, Philip

2012-09-12

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

DEFF Research Database (Denmark)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

2012-01-01

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

Energy Technology Data Exchange (ETDEWEB)

Balzer, F., E-mail: fbalzer@mci.sdu.dk [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Sun, R. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Parisi, J. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany); Rubahn, H.-G. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Lützen, A. [University of Bonn, Kekulé Institute of Organic Chemistry and Biochemistry, Gerhard-Domagk-Str. 1, D-53121 Bonn (Germany); Schiek, M. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany)

2015-12-31

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

International Nuclear Information System (INIS)

Balzer, F.; Sun, R.; Parisi, J.; Rubahn, H.-G.; Lützen, A.; Schiek, M.

2015-01-01

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Quantum Nanostructures by Droplet Epitaxy

OpenAIRE

Somsak Panyakeow

2009-01-01

Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaoran; Cao, Yanwei; Pal, B.; Middey, S.; Kareev, M.; Choi, Y.; Shafer, P.; Haskel, D.; Arenholz, E.; Chakhalian, J.

2017-12-01

We report on the selective fabrication of high-quality Sr2IrO4 and SrIrO3 epitaxial thin films from a single polycrystalline Sr2IrO4 target by pulsed laser deposition. Using a combination of x-ray diffraction and photoemission spectroscopy characterizations, we discover that within a relatively narrow range of substrate temperature, the oxygen partial pressure plays a critical role in the cation stoichiometric ratio of the films, and triggers the stabilization of different Ruddlesden-Popper (RP) phases. Resonant x-ray absorption spectroscopy measurements taken at the Ir L edge and the O K edge demonstrate the presence of strong spin-orbit coupling, and reveal the electronic and orbital structures of both compounds. These results suggest that in addition to the conventional thermodynamics consideration, higher members of the Srn+1IrnO3n+1 series can possibly be achieved by kinetic control away from the thermodynamic limit. These findings offer an approach to the synthesis of ultrathin films of the RP series of iridates and can be extended to other complex oxides with layered structure.

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

Energy Technology Data Exchange (ETDEWEB)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

International Nuclear Information System (INIS)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Epitaxial growth of thin single-crystals and their quality study by Rutherford scattering in channeling conditions

International Nuclear Information System (INIS)

Kirsch, Robert.

1975-01-01

Some aspects of thin crystalline layers are reminded: vacuum deposition, epitaxial growth, annealing and interdiffusion ion channeling and scattering of 1-2MeV helium ions are used to study the crystalline quality, the annealing effects and in some cases the interdiffusion in epitaxial multilayers of silver, copper gold and nickel. Thin single-crystals of gold and nickel oriented (III) plan parallel to the surface were obtained by successive epitaxial growth from muscovite mica clivages. The mounting techniques of single crystalline, self-supporting, 300 to 1200 Angstroems thick, gold and nickel targets of 3mm diameter are described. The gold single-crystals have dislocation densities of 10 8 cm -2 and the various epitaxial layers are obtained without twinning [fr

Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenides

Science.gov (United States)

Yue, Ruoyu

The exponential growth of Si-based technology has finally reached its limit, and a new generation of devices must be developed to continue scaling. A unique class of materials, transition metal dichalcogenides (TMD), have attracted great attention due to their remarkable optical and electronic properties at the atomic thickness scale. Over the past decade, enormous efforts have been put into TMD research for application in low-power devices. Among these studies, a high-quality TMD synthesis method is essential. Molecular beam epitaxy (MBE) can enable high-quality TMD growth by combining high purity elemental sources and an ultra-high vacuum growth environment, together with the back-end-of-line compatible growth temperatures. Although many TMD candidates have been grown by MBE with promising microstructure, the limited grain size (improvement in grain size was achieved through this study. Results from both experiment and simulation showed that reducing the growth rate, enabled by high growth temperature and low metal flux, is vital to nucleation density control. Meanwhile, providing a chalcogen-rich growth environment will promote larger grain lateral growth by suppressing vertical growth. Applying the knowledge learned from the nucleation study, we sucessfully integrated the MBE-grown WSe2 into Si complementary metal-oxide-semiconductor (CMOS) compatible field-effect transistors (FETs). Excellent transport properties, such as field effect hole mobilities (40 cm 2/V·s) with orders of magnitude improvement over the reported values of MBE-grown TMDs, are shown. These studies provide a comprehensive understanding of the MBE synthesis of TMDs and devices, indicating the great potential of integrating TMDs into CMOS process flows for the future electronics.

Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

Science.gov (United States)

2016-08-02

defects :=()llowed by a second buffer epilayer gro\\\\ th with ~: urn thickness with high n-type dopi:1g (- 5£17 cm-3) for the same C/Si ratio of ~1.4 at...gradient, pressure , etc.) can further reduce the parasitic deposition, especially in TFS-growth. • Thick epitaxy on-axis 4H-SiC Growth at High Growth...From - To) 08/02/2016 Final Technical Report 01-Apr-10 Through 31-Mar-14 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Development of High Quality 4H

Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

Directory of Open Access Journals (Sweden)

Mauguin O.

2012-11-01

Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

International Nuclear Information System (INIS)

Okazaki, Sohei; Hirose, Yasushi; Nakao, Shoichiro; Yang, Chang; Harayama, Isao; Sekiba, Daiichiro; Hasegawa, Tetsuya

2014-01-01

InO x F y thin films were epitaxially grown on Y-stabilized ZrO 2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T S ), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T S (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T S , y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T S ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO x F y epitaxial thin films with high fluorine concentration were grown on Y:ZrO 2 . • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3

Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

DEFF Research Database (Denmark)

Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

2008-01-01

deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Aheli Ghosh

2017-09-01

Full Text Available The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ∼0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90  ° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitance- and conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit and their energy distribution. Finally, extracted Dit values were benchmarked against published Dit data for Ge MOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with Ge MOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Science.gov (United States)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

FINAL IMPLEMENTATION AND PERFORMANCE OF THE LHC COLLIMATOR CONTROL SYSTEM

CERN Document Server

Redaelli, S; Masi, A; Losito, R

2009-01-01

The 2008 collimation system of the CERN Large Hadron Collider (LHC) included 80 movable collimators for a total of 316 degrees of freedom. Before beam operation, the final controls implementation was deployed and commissioned. The control system enabled remote control and appropriate diagnostics of the relevant parameters. The collimator motion is driven with time-functions, synchronized with other accelerator systems, which allows controlling the collimator jaw positions with a micrometer accuracy during all machine phases. The machine protection functionality of the system, which also relies on function-based tolerance windows, was also fully validated. The collimator control challenges are reviewed and the final system architecture is presented. The results of the remote system commissioning and the overall performance are discussed.

Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

International Nuclear Information System (INIS)

Ozolins, V.; Wolverton, C.; Zunger, A.

1998-01-01

Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total-energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%), and Ni/Au (15%). We find that left-angle 001 right-angle is the elastically soft direction for biaxial expansion of Cu and Ni, but it is left-angle 201 right-angle for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along left-angle 111 right-angle and left-angle 001 right-angle behave like phase separating systems, while for left-angle 110 right-angle they behave like ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents. copyright 1998 The American Physical Society

Surface control alloy substrates and methods of manufacture therefor

Energy Technology Data Exchange (ETDEWEB)

Fritzemeier, Leslie G. (Mendon, MA); Li, Qi (Marlborough, MA); Rupich, Martin W. (Framingham, MA); Thompson, Elliott D. (Coventry, RI); Siegal, Edward J. (Malden, MA); Thieme, Cornelis Leo Hans (Westborough, MA); Annavarapu, Suresh (Brookline, MA); Arendt, Paul N. (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM)

2004-05-04

Methods and articles for controlling the surface of an alloy substrate for deposition of an epitaxial layer. The invention includes the use of an intermediate layer to stabilize the substrate surface against oxidation for subsequent deposition of an epitaxial layer.

Photovoltaic x-ray detectors based on the GaAs epitaxial structures

CERN Document Server

Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

2002-01-01

The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

1994-01-01

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Liquid phase electro epitaxy growth kinetics of GaAs-A three-dimensional numerical simulation study

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2006-01-01

A three-dimensional numerical simulation study for the liquid phase electro epitaxial growth kinetic of GaAs is presented. The kinetic model is constructed considering (i) the diffusive and convective mass transport, (ii) the heat transfer due to thermoelectric effects such as Peltier effect, Joule effect and Thomson effect, (iii) the electric current distribution with electromigration and (iv) the fluid flow coupled with concentration and temperature fields. The simulations are performed for two configurations namely (i) epitaxial growth from the arsenic saturated gallium rich growth solution, i.e., limited solution model and (ii) epitaxial growth from the arsenic saturated gallium rich growth solution with polycrystalline GaAs feed. The governing equations of liquid phase electro epitaxy are solved numerically with appropriate initial and boundary conditions using the central difference method. Simulations are performed to determine the following, a concentration profiles of solute atoms (As) in the Ga-rich growth solution, shape of the substrate evolution, the growth rate of the GaAs epitaxial film, the contributions of Peltier effect and electromigration of solute atoms to the growth with various experimental growth conditions. The growth rate is found to increase with increasing growth temperature and applied current density. The results are discussed in detail

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials.

Science.gov (United States)

Jang, Seon-Min; Yang, Su Chul

2018-06-08

Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO 2 epitaxial growth and BaTiO 3 conversion. Through the TiO 2 epitaxial growth on FTO substrate, (001) oriented TiO 2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO 2 NBA was conducted to enlarge the surface area for effective Ba 2+ ion diffusion during the perovskite conversion process from TiO 2 to BaTiO 3 . The final structure of perovskite BaTiO 3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO 3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials

Science.gov (United States)

Jang, Seon-Min; Yang, Su Chul

2018-06-01

Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO2 epitaxial growth and BaTiO3 conversion. Through the TiO2 epitaxial growth on FTO substrate, (001) oriented TiO2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO2 NBA was conducted to enlarge the surface area for effective Ba2+ ion diffusion during the perovskite conversion process from TiO2 to BaTiO3. The final structure of perovskite BaTiO3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

Directory of Open Access Journals (Sweden)

K.-H. Cho

2013-10-01

Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

Epitaxial strain-engineered self-assembly of magnetic nanostructures in FeRh thin films

International Nuclear Information System (INIS)

Witte, Ralf; Kruk, Robert; Molinari, Alan; Wang, Di; Brand, Richard A; Hahn, Horst; Schlabach, Sabine; Provenzano, Virgil

2017-01-01

In this paper we introduce an innovative bottom–up approach for engineering self-assembled magnetic nanostructures using epitaxial strain-induced twinning and phase separation. X-ray diffraction, 57 Fe Mössbauer spectroscopy, scanning tunneling microscopy, and transmission electron microscopy show that epitaxial films of a near-equiatomic FeRh alloy respond to the applied epitaxial strain by laterally splitting into two structural phases on the nanometer length scale. Most importantly, these two structural phases differ with respect to their magnetic properties, one being paramagnetic and the other ferromagnetic, thus leading to the formation of a patterned magnetic nanostructure. It is argued that the phase separation directly results from the different strain-dependence of the total energy of the two competing phases. This straightforward relation directly enables further tailoring and optimization of the nanostructures’ properties. (paper)

Virtualized Network Control. Final Report

Energy Technology Data Exchange (ETDEWEB)

Ghani, Nasir [Univ. of New Mexico, Albuquerque, NM (United States)

2013-02-01

This document is the final report for the Virtualized Network Control (VNC) project, which was funded by the United States Department of Energy (DOE) Office of Science. This project was also informally referred to as Advanced Resource Computation for Hybrid Service and TOpology NEtworks (ARCHSTONE). This report provides a summary of the project's activities, tasks, deliverable, and accomplishments. It also provides a summary of the documents, software, and presentations generated as part of this projects activities. Namely, the Appendix contains an archive of the deliverables, documents, and presentations generated a part of this project.

A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

International Nuclear Information System (INIS)

Heera, V.

1989-01-01

A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

Energy Technology Data Exchange (ETDEWEB)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Science.gov (United States)

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

International Nuclear Information System (INIS)

Liu, H.Y.; Kao, Y.C.; Kim, T.S.

1990-01-01

High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

CERN Document Server

Lee, C J

1998-01-01

We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

X-ray diffraction study of rare earth epitaxial structures grown by MBE onto (111) GaAs

International Nuclear Information System (INIS)

Bennett, W.R.; Farrow, R.F.C.; Parkin, S.S.P.; Marinero, E.E.; Segmuller, A.P.

1989-01-01

The authors report on the new epitaxial system LaF 3 /Er/Dy/Er/LaF 3 /GaAs(111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF 3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

DEFF Research Database (Denmark)

Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

2012-01-01

-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

On the kinetic barriers of graphene homo-epitaxy

International Nuclear Information System (INIS)

Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

2014-01-01

The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

The final word. OSHA's final ruling offers firm deadlines for infection control.

Science.gov (United States)

West, K

1992-03-01

Departments that have put off program development while waiting for the final ruling to be published have a lot of work to do. Many departments have been cited and fined by OSHA in the past year for failure to begin infection-control programs or provide hepatitis-B vaccines to personnel. Under the new budget, OSHA was granted permission to up its fine structure sevenfold--thus, a small fine is $7,000, and the highest fine for a single violation is $70,000. Fines can have a greater impact on a department's budget than implementation of the program over time. A key point to remember is that a strong infection-control program will reduce exposure follow-up costs and worker-compensation claims. Infection control is a win-win situation.

Epitaxial hexagonal materials on IBAD-textured substrates

Science.gov (United States)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

Science.gov (United States)

Siegal, Michelle F.; Martínez-Miranda, L. J.; Santiago-Avilés, J. J.; Graham, W. R.; Siegal, M. P.

1994-02-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 Å. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 Å. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films.

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

International Nuclear Information System (INIS)

Siegal, M.F.; Martinez-Miranda, L.J.; Santiago-Aviles, J.J.; Graham, W.R.; Siegal, M.P.

1994-01-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 A. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 A. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

Energy Technology Data Exchange (ETDEWEB)

Okazaki, Sohei [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yang, Chang [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8577 (Japan); Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-30

InO{sub x}F{sub y} thin films were epitaxially grown on Y-stabilized ZrO{sub 2} (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T{sub S}), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T{sub S} (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T{sub S}, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T{sub S} ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO{sub x}F{sub y} epitaxial thin films with high fluorine concentration were grown on Y:ZrO{sub 2}. • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3.

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Quantum Hall effect in epitaxial graphene with permanent magnets.

Science.gov (United States)

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Quantum Hall effect in epitaxial graphene with permanent magnets

Science.gov (United States)

Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

2016-12-01

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

2014-01-01

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

Epitaxial growth of quantum rods with high aspect ratio and compositional contrast

International Nuclear Information System (INIS)

Li, L. H.; Patriarche, G.; Fiore, A.

2008-01-01

The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

International Nuclear Information System (INIS)

Fromm, F; Wehrfritz, P; Seyller, Th; Hundhausen, M

2013-01-01

Raman spectroscopy is frequently used to study the properties of epitaxial graphene grown on silicon carbide (SiC). In this work, we present a confocal micro-Raman study of epitaxial graphene on SiC(0001) in top-down geometry, i.e. in a geometry where both the primary laser light beam as well as the back-scattered light is guided through the SiC substrate. Compared to the conventional top-up configuration, in which confocal micro-Raman spectra are measured from the air side, we observe a significant intensity enhancement in top-down configuration, indicating that most of the Raman-scattered light is emitted into the SiC substrate. The intensity enhancement is explained in terms of dipole radiation at a dielectric surface. The new technique opens the possibility to probe graphene layers in devices where the graphene layer is covered by non-transparent materials. We demonstrate this by measuring gate-modulated Raman spectra of a top-gated epitaxial graphene field effect device. Moreover, we show that these measurements enable us to disentangle the effects of strain and charge on the positions of the prominent Raman lines in epitaxial graphene on SiC. (paper)

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

International Nuclear Information System (INIS)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.; Lefebvre, P.; Jahn, U.; Trampert, A.

2011-01-01

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

Energy Technology Data Exchange (ETDEWEB)

Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

2014-09-30

Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

1991-10-01

The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

Science.gov (United States)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

International Nuclear Information System (INIS)

Shayduk, Roman

2010-01-01

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping; Wang, Xinqiang; Wang, Tao; Tan, Chih Shan; Sheng, Bowen; Sun, Xiaoxiao; Li, Mo; Rong, Xin; Zheng, Xiantong; Chen, Zhaoying; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Zhang, Jian; Zhang, Xixiang; Shen, Bo

2017-01-01

-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N

GaN:Co epitaxial layers grown by MOVPE

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

2015-01-01

Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

Epitaxial lift-off for solid-state cavity quantum electrodynamics

International Nuclear Information System (INIS)

Greuter, Lukas; Najer, Daniel; Kuhlmann, Andreas V.; Starosielec, Sebastian; Warburton, Richard J.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.

2015-01-01

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime

Space Processing Applications rocket project SPAR III. Final report

International Nuclear Information System (INIS)

Reeves, F.

1978-01-01

This document presents the engineering report and science payload III test report and summarizes the experiment objectives, design/operational concepts, and final results of each of five scientific experiments conducted during the third Space Processing Applications Rocket (SPAR) flight flown by NASA in December 1976. The five individual SPAR experiments, covering a wide and varied range of scientific materials processing objectives, were entitled: Liquid Mixing, Interaction of Bubbles with Solidification Interfaces, Epitaxial Growth of Single Crystal Film, Containerless Processing of Beryllium, and Contact and Coalescence of Viscous Bodies

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Epitaxial growth on porous GaAs substrates

Czech Academy of Sciences Publication Activity Database

Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

2013-01-01

Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

2009-01-01

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

Bi-epitaxial tilted out-of-plane YBCO junctions on NdGaO{sub 3} substrates with YSZ seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Benacka, S.; Strbik, V. (Institute of Electrical Engineering SAS, Bratislava (SK))

2008-10-15

Bi-epitaxial junctions with out-of plane tilt of the c axis were fabricated of YBCO superconducting thin films on NdGaO{sub 3} substrates with different miscut angles. Bi-epitaxial growth was provided by implementation of an Y:ZrO{sub 2} seeding layer on a certain part of the substrate. Junctions with different orientation of the bi-epitaxial boundaries were fabricated, their DC electrical properties were studied as a function of the boundary orientation angle. The junctions showed extremely high critical current densities for all tested miscut angles and bi-epitaxial boundary orientations (about 105 A/cm2 at 77 K and up to 106 A/cm2 at 4.2 K). The dependence of critical current density on the bi-epitaxial boundary orientation angle may be explained as an effect of a d-wave pairing mechanism in the HTSC with the simple Sigrist-Rice model. The studied boundaries may be considered as model structures for the grain boundaries in the coated conductors. (au)

Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

2007-01-01

Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

Strain-induced properties of epitaxial VOx thin films

NARCIS (Netherlands)

Rata, AD; Hibma, T

We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

Formation of defect-fluorite structured NdNiOxHy epitaxial thin films via a soft chemical route from NdNiO3 precursors.

Science.gov (United States)

Onozuka, T; Chikamatsu, A; Katayama, T; Fukumura, T; Hasegawa, T

2016-07-26

A new phase of oxyhydride NdNiOxHy with a defect-fluorite structure was obtained by a soft chemical reaction of NdNiO3 epitaxial thin films on a substrate of SrTiO3 (100) with CaH2. The epitaxial relationship of this phase relative to SrTiO3 could be controlled by changing the reaction temperature. At 240 °C, NdNiOxHy grew with a [001] orientation, forming a thin layer of infinite-layer NdNiO2 at the interface between the NdNiOxHy and the substrate. Meanwhile, a high-temperature reaction at 400 °C formed [110]-oriented NdNiOxHy without NdNiO2.

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Science.gov (United States)

Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

2018-04-01

We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.

Epitaxial hexagonal materials on IBAD-textured substrates

Energy Technology Data Exchange (ETDEWEB)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

International Nuclear Information System (INIS)

Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

2004-01-01

Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

Electrical properties of epitaxially grown VOx thin films

NARCIS (Netherlands)

Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

2003-01-01

High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

Selenidation of epitaxial silicene on ZrB2

NARCIS (Netherlands)

Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

2018-01-01

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ±

Liquid-phase epitaxy of InGaAsP solid solutions on profiled substrates of InP(100)

International Nuclear Information System (INIS)

Dvoryankin, V.F.; Kaevitser, L.R.; Komarov, A.A.; Telegin, A.A.; Khusid, L.B.; Chernushin, M.D.

1990-01-01

Peculiarities of selective growth of InGaAsP solid solutions under liquid-phase epitaxy in shallow grooves are considered. InGaAsP crystals grown in grooves oriented along crystallografic [110] and [011] directions are determined to trend to equilibrium form under two-phase epitaxy, while wedge-shaped form of In 0.77 Ga 0.23 As 0.53 P 0.45 and In 0.53 P o.45 and IN 0.59 Ga 0.41 As 0.83 P 0.12 epitaxial layers obtained in grooves is determined by their composition only and does not depend on groove configuration

Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air

Science.gov (United States)

Grigoryev, D. V.; Voitsekhovskii, A. V.; Lozovoy, K. A.; Tarasenko, V. F.; Shulepov, M. A.

2015-11-01

In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are discussed. The experimental data show that the action of pulses of nanosecond volume discharge in air at atmospheric pressure leads to changes in the electrophysical properties of MCT epitaxial films due to formation of a near-surface high- conductivity layer of the n-type conduction. The preliminary results show that it is possible to use such actions in the development of technologies for the controlled change of the properties of MCT.

Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

Science.gov (United States)

Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

2018-03-01

La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

Science.gov (United States)

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)

International Nuclear Information System (INIS)

Radaelli, G.; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

2014-01-01

Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures

Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

International Nuclear Information System (INIS)

Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

1984-01-01

Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

Strain dependent microstructural modifications of BiCrO{sub 3} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Kannan, Vijayanandhini, E-mail: kvnandhini@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Arredondo, Miryam; Johann, Florian; Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Labrugere, Christine [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); CeCaMA, University of Bordeaux, ICMCB, F-33600 Pessac (France); Maglione, Mario [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Vrejoiu, Ionela [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

2013-10-31

Strain-dependent microstructural modifications were observed in epitaxial BiCrO{sub 3} (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCO{sub STO} [BCO grown on buffered SrTiO{sub 3} (001)] and in-plane compressive strain, BCO{sub NGO} [BCO grown on buffered NdGaO{sub 3} (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCO{sub STO}, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCO{sub STO} films with d ≥ 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or “modulated structure”) as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM–energy dispersive X-ray analysis. In contrast, compressively strained BCO{sub NGO} films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ∼ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film. - Highlights: • Phase pure

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Science.gov (United States)

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

International Nuclear Information System (INIS)

Chen, Yen-Liang; Lo, Ikai; Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi; Tsai, Jenn-Kai; Schuber, Ralf; Schaadt, Daniel

2012-01-01

We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69″ to 59.43″ for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 × 5 μm 2 with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: ► The samples were grown by plasma-assisted molecular beam epitaxy. ► The GaN epilayer was grown on sapphire substrate. ► The samples were characterized by X-ray diffraction and atomic force microscopy. ► The sample quality was improved by gradient buffer layer.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

KAUST Repository

Pergolesi, Daniele

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Substrate-induced magnetism in epitaxial graphene buffer layers.

Science.gov (United States)

Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

2009-07-08

Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Gao, Fangliang; Wen, Lei; Zhang, Xiaona; Guan, Yunfang; Li, Jingling; Zhang, Shuguang; Li, Guoqiang

2015-01-01

In 0.53 Ga 0.47 As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In 0.4 Ga 0.6 As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In 0.53 Ga 0.47 As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that the crystalline quality and surface morphology of as-grown In 0.53 Ga 0.47 As epilayer are strongly affected by the thickness of the In 0.4 Ga 0.6 As buffer layer. From TEM investigation, we understand that the type and the distribution of dislocations of the buffer layer and the as-grown In 0.53 Ga 0.47 As film are different. We have demonstrated that the In 0.4 Ga 0.6 As buffer layer with a thickness of 12 nm can advantageously release the lattice mismatch stress between the In 0.53 Ga 0.47 As and Si substrate, ultimately leading to a high-quality In 0.53 Ga 0.47 As epitaxial film with low surface roughness. - Highlights: • We provide a simple approach to achieve high-quality In 0.53 Ga 0.47 As films on Si. • An appropriate thickness of In 0.4 Ga 0.6 As buffer layer can release mismatch strain. • High-quality In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer. • Smooth surface In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José ; Burriel, Mó nica

2010-01-01

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

AASERT: Rare Earth Arsenides, Magnetic Semi-Metal Epitaxy for Opto-Electronics

National Research Council Canada - National Science Library

Palmstrom, Chris

2000-01-01

...). An ultra-high vacuum sample transfer system and a variable temperature scanning tunneling microscope were attached to two already existing molecular beam epitaxy systems and surface science equipment...

Tailoring of magnetic properties of ultrathin epitaxial Fe films by Dy doping

Directory of Open Access Journals (Sweden)

A. A. Baker

2015-07-01

Full Text Available We report on the controlled modification of relaxation parameters and magnetic moments of epitaxial Fe thin films through Dy doping. Ferromagnetic resonance measurements show that an increase of Dy doping from 0.1% to 5% gives a tripling in Gilbert damping, and more importantly a strongly enhanced anisotropic damping that can be qualitatively understood through the slow-relaxing impurity model. X-ray magnetic circular dichroism measurements show a pronounced suppression of the orbital moment of the Fe with Dy doping, leading to an almost threefold drop in the orbital to spin moment ratio, ml/ms. Doping with Dy can therefore be used to control both dynamic and static properties of thin ferromagnetic films for improved performance in spintronics device applications, mediated through the antiferromagnetic interaction of the 4f and 3d states.

Tailoring of magnetic properties of ultrathin epitaxial Fe films by Dy doping

Energy Technology Data Exchange (ETDEWEB)

Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Hesjedal, T. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom)

2015-07-15

We report on the controlled modification of relaxation parameters and magnetic moments of epitaxial Fe thin films through Dy doping. Ferromagnetic resonance measurements show that an increase of Dy doping from 0.1% to 5% gives a tripling in Gilbert damping, and more importantly a strongly enhanced anisotropic damping that can be qualitatively understood through the slow-relaxing impurity model. X-ray magnetic circular dichroism measurements show a pronounced suppression of the orbital moment of the Fe with Dy doping, leading to an almost threefold drop in the orbital to spin moment ratio, m{sub l}/m{sub s}. Doping with Dy can therefore be used to control both dynamic and static properties of thin ferromagnetic films for improved performance in spintronics device applications, mediated through the antiferromagnetic interaction of the 4f and 3d states.

Growth and properties of epitaxial iron oxide layers

NARCIS (Netherlands)

Voogt, F.C; Fujii, T; Hibma, T; Zhang, G.L.; Smulders, P.J M

1996-01-01

Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or Fe-57 from Knudsen cells in the presence of a NO2 flow directed to the substrate. The resulting layers have been investigated in situ with LEED, RHEED, AES and XPS and ex situ with GEMS and ion beam

Epitaxially influenced boundary layer model for size effect in thin metallic films

International Nuclear Information System (INIS)

Bazant, Zdenek P.; Guo Zaoyang; Espinosa, Horacio D.; Zhu Yong; Peng Bei

2005-01-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films

Epitaxially influenced boundary layer model for size effect in thin metallic films

Science.gov (United States)

Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

2005-04-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

Magnetic and electrical properties of epitaxial GeMn

Energy Technology Data Exchange (ETDEWEB)

Ahlers, Stefan

2009-01-15

In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

International Nuclear Information System (INIS)

Somaschini, C; Bietti, S; Sanguinetti, S; Koguchi, N; Fedorov, A; Abbarchi, M; Gurioli, M

2009-01-01

We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported.

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

NARCIS (Netherlands)

George, S.D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.

2003-01-01

We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

Science.gov (United States)

Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

2018-04-25

Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

Energy Technology Data Exchange (ETDEWEB)

Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

2010-01-10

Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Shayduk, Roman

2010-05-20

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Chen, Yen-Liang [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Tsai, Jenn-Kai [Department of Electronics Engineering, National Formosa University, Hu-Wei, Yun-Lin County 63208, Taiwan, ROC (China); Schuber, Ralf; Schaadt, Daniel [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

2012-07-31

We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69 Double-Prime to 59.43 Double-Prime for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 Multiplication-Sign 5 {mu}m{sup 2} with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: Black-Right-Pointing-Pointer The samples were grown by plasma-assisted molecular beam epitaxy. Black-Right-Pointing-Pointer The GaN epilayer was grown on sapphire substrate. Black-Right-Pointing-Pointer The samples were characterized by X-ray diffraction and atomic force microscopy. Black-Right-Pointing-Pointer The sample quality was improved by gradient buffer layer.

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

2013-12-16

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Energy Technology Data Exchange (ETDEWEB)

Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

2013-05-01

Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

Energy Technology Data Exchange (ETDEWEB)

Götsch, Thomas; Mayr, Lukas [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Stöger-Pollach, Michael [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, A-1040 Vienna (Austria); Klötzer, Bernhard [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Penner, Simon, E-mail: simon.penner@uibk.ac.at [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria)

2015-03-15

Highlights: • Preparation of unsupported yttrium-stabilized zirconia films. • Control of ordering and epitaxy by temperature of deposition template. • Adjustment of film defectivity by deposition and post-oxidation temperature. • Reproducibility of target stoichiometry in the deposited films. • Lateral and vertical chemical homogeneity. - Abstract: Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films (“YSZ”, 8 mol% Y{sub 2}O{sub 3}) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices

NARCIS (Netherlands)

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-01-01

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to

Conductivity of epitaxial and CVD graphene with correlated line defects

DEFF Research Database (Denmark)

Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

2014-01-01

Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due...

Design of Strain-Compensated Epitaxial Layers Using an Electrical Circuit Model

Science.gov (United States)

Kujofsa, Tedi; Ayers, John E.

2017-12-01

The design of heterostructures that exhibit desired strain characteristics is critical for the realization of semiconductor devices with improved performance and reliability. The control of strain and dislocation dynamics requires an understanding of the relaxation processes associated with mismatched epitaxy, and the starting point for this analysis is the equilibrium strain profile, because the difference between the actual strain and the equilibrium value determines the driving force for dislocation glide and relaxation. Previously, we developed an electrical circuit model approach for the equilibrium analysis of semiconductor heterostructures, in which an epitaxial layer may be represented by a stack of subcircuits, each of which involves an independent current source, a resistor, an independent voltage source, and an ideal diode. In this work, we have applied the electrical circuit model to study the strain compensation mechanism and show that, for a given compositionally uniform device layer with fixed mismatch and layer thickness, a buffer layer may be designed (in terms of thickness and mismatch) to tailor the strain in the device layer. A special case is that in which the device layer will exhibit zero residual strain in equilibrium (complete strain compensation). In addition, the application of the electrical circuit analogy enables the determination of exact expressions for the residual strain characteristics of both the buffer and device layers in the general case where the device layer may exhibit partial strain compensation. On the basis of this framework, it is possible to develop design equations for the tailoring of the strain in a device layer grown on a uniform composition buffer.

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

Energy Technology Data Exchange (ETDEWEB)

Radaelli, G., E-mail: greta.radaelli@gmail.com; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R. [LNESS Center - Dipartimento di Fisica del Politecnico di Milano, Como 22100 (Italy)

2014-05-07

Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Maldonado, D., E-mail: david.hernandez@uca.es [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Herrera, M.; Sales, D.L. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain); Pizarro, J.; Galindo, P.L. [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Molina, S.I. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)

2010-07-01

The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Science.gov (United States)

Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

2009-04-01

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

International Nuclear Information System (INIS)

Hernandez-Maldonado, D.; Herrera, M.; Sales, D.L.; Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L.; Pizarro, J.; Galindo, P.L.; Molina, S.I.

2010-01-01

The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

Use of halide transport in epitaxial growth of InP and related compounds

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION

Directory of Open Access Journals (Sweden)

Zoya Nikonova

2017-06-01

Full Text Available For the production of silicon photo-transducers (PhT the acquisition of epitaxial compositions (EC with high resistivity of working layer. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defects during epitaxial growth is produced by the quality of underlay preparation before that. Multiple research of relatively thin (less than 20-30 microns epitaxial layers demonstrated, that contamination or damages of underlay surface cause the development of defects of wrapping, counterparts, macroscopic protuberances in the growing layer. During inverted epitaxy there are no high requirements as for structural perfection of epitaxial layer as far as in PhT, produced on the basis of EC for which inverted silicon structures (ISS serve with the working layer of mono-crystal substrate. Therefore in inverted epitaxy it is the problem of the development in the course of defects growth not in epitaxial layer, but in underlay, that becomes the major one. The processes of the development of defects in underlay in the course of growing thick (approximately 300 microns epitaxial layer are scarcely researched by now. Scientists sustained the idea that when using dislocation-free underlays for growing in the working layer of ISS there are dislocations with the density of 103 sm-2 and more. Thus, investigation of the factors that determine the development of dislocations in underlay in the process of epitaxy, has now gained great practical value.

Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

Czech Academy of Sciences Publication Activity Database

Tyunina, Marina; Yao, L.; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Trepakov, Vladimír; van Dijken, S.

2015-01-01

Roč. 16, č. 2 (2015), 026002 ISSN 1468-6996 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : epitaxial growth * ferroelectric nanofilms Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.433, year: 2015

Epitaxial Ge-crystal arrays for X-ray detection

International Nuclear Information System (INIS)

Kreiliger, T; Falub, C V; Müller, E; Känel, H von; Isa, F; Isella, G; Chrastina, D; Bergamaschini, R; Marzegalli, A; Miglio, L; Kaufmann, R; Niedermann, P; Neels, A; Dommann, A; Meduňa, M

2014-01-01

Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. The electrical characteristics of individual Ge/Si heterojunction diodes are obtained from in-situ measurements inside a scanning electron microscope. The fabrication of monolithically integrated detectors is shown to be compatible with Si-CMOS processing

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

2015-01-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10 −2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R RMS of ∼0.4 nm

Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

Science.gov (United States)

Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

2015-06-01

Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

Development of Epitaxial GaN Films for RF Communications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

Domain matching epitaxy of cubic In{sub 2}O{sub 3} on r-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Vogt, Patrick; Trampert, Achim; Ramsteiner, Manfred; Bierwagen, Oliver [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117, Berlin (Germany)

2015-07-15

Undoped, Sn-doped, and Mg-doped In{sub 2}O{sub 3} layers were grown on rhombohedral r-plane sapphire (α-Al{sub 2}O{sub 3} (10.2)) by plasma-assisted molecular beam epitaxy. X-ray diffraction and Raman scattering experiments demonstrated the formation of phase-pure, cubic (110)-oriented In{sub 2}O{sub 3} for Sn- and Mg-concentrations up to 2 x 10{sup 20} and 6 x 10{sup 20} cm{sup -3}, respectively. Scanning electron microscopy images showed facetted domains without any surface-parallel (110) facets. High Mg- or Sn-doping influenced surface morphology and the facet formation. X-ray diffraction Φ-scans indicated the formation of two rotational domains separated by an angle Φ = 86.6 due to the substrate mirror-symmetry around the in-plane-projected Al{sub 2}O{sub 3} c-axis. The in-plane epitaxial relationships to the substrate were determined for both domains. For the first domain it is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 3 anti 4]. For the second domain the inplane epitaxial relation is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 34]. A low-mismatch coincidence lattice of indium atoms from the film and oxygen atoms from the substrate rationalizes this epitaxial relation by domain-matched epitaxy. Cross-sectional transmission-electron microscopy showed a columnar domain-structure, indicating the vertical growth of the rotational domains after their nucleation. Coincidence structure of In{sub 2}O{sub 3} (110) (In atoms in red) grown on Al{sub 2}O{sub 3} (10.2) (O atoms in blue) showing two rotational domians. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

Science.gov (United States)

Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

2013-05-01

In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

OpenAIRE

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

2016-01-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

Visible light carrier generation in co-doped epitaxial titanate films

Energy Technology Data Exchange (ETDEWEB)

Comes, Ryan B., E-mail: ryan.comes@pnnl.gov; Kaspar, Tiffany C.; Chambers, Scott A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Smolin, Sergey Y.; Baxter, Jason B. [Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Gao, Ran [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Apgar, Brent A. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801 (United States); Martin, Lane W. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Bowden, Mark E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

2015-03-02

Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

Giant inelastic tunneling in epitaxial graphene mediated by localized states

NARCIS (Netherlands)

Cervenka, J.; Ruit, van de K.; Flipse, C.F.J.

2010-01-01

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have

Epitaxial growth with pulsed deposition: Submonolayer scaling and Villain instability

DEFF Research Database (Denmark)

Hinnemann, Berit; Hinrichsen, H.; Wolf, D.E.

2003-01-01

It has been observed experimentally that under certain conditions, pulsed laser deposition (PLD) produces smoother surfaces than ordinary molecular beam epitaxy (MBE). So far, the mechanism leading to the improved quality of surfaces in PLD is not yet fully understood. In the present work, we...

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

International Nuclear Information System (INIS)

Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

2004-01-01

Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Disorder in silicon films grown epitaxially at low temperature

International Nuclear Information System (INIS)

Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

2003-01-01

Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

Epitaxial growth mechanisms of graphene and effects of substrates

Science.gov (United States)

Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

2012-06-01

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

International Nuclear Information System (INIS)

Shieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung

2015-01-01

In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic chemical vapor deposition. The effect of in-situ Ti metal nitridation on the performance of these InGaN-based LEDs was then investigated. It was very clear that the use of the nitrided Ti buffer layer (NTBL) induced the formation of a nanoscale epitaxial lateral overgrowth layer during the epitaxial growth. When evaluated by Raman spectroscopy, this epi-layer exhibited large in-plane compressive stress releasing with a Raman shift value of 567.9 cm -1 . Cathodoluminescence spectroscopy and transmission electron microscopy results indicated that the InGaN-based LEDs with an NTBL have improved crystal quality, with a low threading dislocations density being yielded via the strain relaxation in the InGaN-based LEDs. Based on the results mentioned above, the electroluminescence results indicate that the light performance of InGaN-based LEDs with an NTBL can be enhanced by 45% and 42% at 20 mA and 100 mA, respectively. These results suggest that the strain relaxation and quality improvement in the GaN epilayer could be responsible for the enhancement of emission power. - Highlights: • The crystal-quality of InGaN-based LEDs with NTBL by NELOG was improved. • The InGaN-based LEDs with NTBL have strain releases by NELOG. • The optical properties of InGaN-based LEDs were shown by CL and EL measurements

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

2014-03-01

We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

International Nuclear Information System (INIS)

Zhang, W.; Zhang, D.; Yuan, S. J.; Huang, Z. C.; Zhai, Y.; Wong, P. K. J.; Wu, J.; Xu, Y. B.

2014-01-01

Previous studies on epitaxial Fe 3 O 4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe 3 O 4 thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe 3 O 4 planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained

Study of epitaxial YBa2Cu3Ox films

International Nuclear Information System (INIS)

Lee, S.G.; Chi, C.C.; Koren, G.; Gupta, A.; Segmuller, A.

1990-01-01

In this paper, the authors present a systematic study of epitaxial YBa 2 Cu 3 O x films laser ablated on Y-cut LiNbO 3 substrates. X-ray diffraction pattern indicates that the c-axis is perpendicular to the substrate plane and the (110) direction of the film is parallel to the (110) of the substrate with two domains with the (110) as a mirror plane. Resistivity of the film shows a typical metallic behavior in the normal state with a sharp transition at 92K. The effects of oxygen deficiency on the resistivity are also studied. Oxygen content is controlled by annealing the sample either in low oxygen pressure or in vacuum and estimated from the c-axis lattice parameter determined by X-ray diffraction. As oxygen is depleted gradually, the film resistivity shows metallic, semiconducting, and eventually insulating behaviors. Superconducting percolation phenomenon is observed for the semiconducting sample at low temperatures

Magnetoresistance measurements of different geometries on epitaxial InP and GaInAs/InP layers

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

Hall effect measurement is the main method of the determination of the charge carrier mobility in semiconductors. Magnetoresistance measurements are much less used for the same purpose, perhaps because of the influence of the sample geometry or of the scattering factor differing from the Hall factor. On the other hand, in the case of the epitaxial layers, all these measurements require semi-insulating substrate. In this work two aspects of the magnetoresistance measurements and use of them is demonstrated. First classical geometrical magnetoresistance measurements on InP are studied. On the other hand, a method is presented and applied to sandwich structures in order to measure the geometrical magnetoresistance on epitaxial layers grown on conducting substrates. Resistance of structures metal-epitaxial layer-substrate-metal is measured in the dependence on the angle between the current and magnetic field vectors.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

KAUST Repository

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W; Lippert, Thomas; Traversa, Enrico; Kilner, John A

2015-01-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used

NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Jumpei, E-mail: higuchi@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Sato, Yoichi [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

2011-09-30

NiFe epitaxial films are prepared on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

International Nuclear Information System (INIS)

Higuchi, Jumpei; Ohtake, Mitsuru; Sato, Yoichi; Kirino, Fumiyoshi; Futamoto, Masaaki

2011-01-01

NiFe epitaxial films are prepared on Cr(211) bcc and Cr(100) bcc underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211) bcc and Cr(100) bcc underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

Quantum Nanostructures by Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Somsak Panyakeow

2009-02-01

Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

International Nuclear Information System (INIS)

Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

2006-01-01

The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Orna, J.; Morellon, L.; Algarabel, P.A.; Pardo, J.A.; Magen, C.; Varela, M.; Pennycook, S.J.; De Teresa, J.M.; Ibarra, M.R.

2010-01-01

We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr 2 CrReO 6 thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr 2 CrReO 6 (SCRO) (0 0 1) [1 0 0]-parallel SrTiO 3 (STO) (0 0 1) [1 1 0] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M S (300 K)=1 μ B /f.u. and ρ (300 K)=2.8 mΩ cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T C =481(2) K. We believe these materials be of interest as electrodes in spintronic devices.

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

International Nuclear Information System (INIS)

Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

2002-01-01

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

2010-01-01

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose

2010-06-22

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

International Nuclear Information System (INIS)

Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

2004-01-01

We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

Oxygen pressure-tuned epitaxy and magnetic properties of magnetite thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junran [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Liu, Wenqing [York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom); Zhang, Minhao; Zhang, Xiaoqian; Niu, Wei; Gao, Ming [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wang, Xuefeng, E-mail: xfwang@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Du, Jun [School of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Rong [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Yongbing, E-mail: ybxu@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom)

2017-06-15

Highlights: • Quasi-2D Fe{sub 3}O{sub 4} films were obtained by PLD. • RHEED under different oxygen pressure were observed. • Influence of oxygen pressure on Fe{sub 3}O{sub 4} films were investigated. • Epitaxy and magnetic properties were tuned by oxygen pressure. • The ratio of Fe{sup 2+}/Fe{sup 3+} fitted by XPS is the tuned factor of M{sub s}. - Abstract: Quasi-two-dimensional magnetite epitaxial thin films have been synthesized by pulsed laser deposition technique at various oxygen pressures. The saturation magnetizations of the magnetite films were found to decrease from 425 emu/cm{sup 3}, which is close to the bulk value, to 175 emu/cm{sup 3} as the growth atmospheres varying from high vacuum (∼1 × 10{sup −8} mbar) to oxygen pressure of 1 × 10{sup −3} mbar. The ratio of the Fe{sup 3+} to Fe{sup 2+} increases from 2 to 2.7 as oxygen pressure increasing shown by XPS fitting, which weakens the net magnetic moment generated by Fe{sup 2+} at octahedral sites as the spins of the Fe{sup 3+} ions at octahedral and tetrahedral sites are aligned in antiparallel. The results offer direct experimental evidence of the influence to the Fe{sup 3+}/Fe{sup 2+} ratio and the magnetic moment in magnetite epitaxy films by oxygen pressure, which is significant for spintronic applications.

Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices.

Science.gov (United States)

Ravichandran, Jayakanth; Yadav, Ajay K; Cheaito, Ramez; Rossen, Pim B; Soukiassian, Arsen; Suresha, S J; Duda, John C; Foley, Brian M; Lee, Che-Hui; Zhu, Ye; Lichtenberger, Arthur W; Moore, Joel E; Muller, David A; Schlom, Darrell G; Hopkins, Patrick E; Majumdar, Arun; Ramesh, Ramamoorthy; Zurbuchen, Mark A

2014-02-01

Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

Preparation of ZnO:N films by radical beam gettering epitaxy

International Nuclear Information System (INIS)

Rogozin, I. V.

2007-01-01

ZnO:N epitaxial films are obtained by radical beam gettering epitaxy. The properties of the films are studied using X-ray diffraction, atomic-force microscopy, secondary-ion mass spectroscopy, and photoluminescence. A narrow (002) peak is observed in the X-ray diffraction spectra, which indicates that the ZnO:N films are oriented along the c axis. Secondary-ion mass spectroscopy indicates that N is present in the ZnO films. In the low-energy luminescence spectrum of the ZnO:N films, a peak at 3.31 eV is observed. This peak is presumably attributed to the exciton bound at the neutral acceptor N O . The postannealing of the ZnO:N films was carried out in atomic oxygen. The nature of the donor-acceptor (3.23 eV) and green (2.56 eV) luminescence bands is discussed

InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

International Nuclear Information System (INIS)

Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

2007-01-01

We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

2008-03-15

Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

Science.gov (United States)

Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

1990-08-10

Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Science.gov (United States)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Interface termination and band alignment of epitaxially grown alumina films on Cu-Al alloy

Science.gov (United States)

Yoshitake, Michiko; Song, Weijie; Libra, Jiří; Mašek, Karel; Šutara, František; Matolín, Vladimír; Prince, Kevin C.

2008-02-01

Epitaxial ultrathin alumina films were grown on a Cu-9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong, E-mail: xswu@pku.edu.cn [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

2015-01-05

We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

In-situ grazing incidence X-ray diffraction measurements of relaxation in Fe/MgO/Fe epitaxial magnetic tunnel junctions during annealing

Energy Technology Data Exchange (ETDEWEB)

Eastwood, D.S. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Ali, M.; Hickey, B.J. [Department of Physics and Astronomy, University of Leeds, Leeds LS2 1JT (United Kingdom); Tanner, B.K., E-mail: b.k.tanner@dur.ac.uk [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

2013-12-15

The relaxation of Fe/MgO/Fe tunnel junctions grown epitaxially on (001) MgO substrates has been measured by in-situ grazing incidence in-plane X-ray diffraction during the thermal annealing cycle. We find that the Fe layers are fully relaxed and that there are no irreversible changes during annealing. The MgO tunnel barrier is initially strained towards the Fe but on annealing, relaxes and expands towards the bulk MgO value. The strain dispersion is reduced in the MgO by about 40% above 480 K post-annealing. There is no significant change in the “twist” mosaic. Our results indicate that the final annealing stage of device fabrication, crucial to attainment of high TMR, induces substantial strain relaxation at the MgO barrier/lower Fe electrode interface. - Highlights: • Lattice relaxation of Fe/MgO/Fe epitaxial magnetic tunnel junctions measured. • In-plane lattice parameter of Fe equal to bulk value; totally relaxed. • MgO barrier initially strained towards the Fe but relaxes on annealing. • Reduction in strain dispersion in the MgO barrier by 40% above about 470 K. • No change in the in-plane “twist” mosaic throughout the annealing cycle.

A novel epitaxially grown LSO-based thin-film scintillator for micro-imaging using hard synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Douissard, P.A.; Martin, T.; Chevalier, V.; Rack, A. [European Synchrotron Radiat Facil, F-38043 Grenoble, (France); Cecilia, A.; Baumbach, T.; Rack, A. [Karlsruhe Inst Technol ANKA, D-76021 Karlsruhe, (Germany); Couchaud, M. [CEA LETI, F-38054 Grenoble, (France); Dupre, K. [FEE GmbH, D-55743 Idar Oberstein, (Germany); Kuhbacher, M. [Helmholtz Zentrum Berlin Mat and Energie, D-14109 Berlin, (Germany)

2010-07-01

The efficiency of high-resolution pixel detectors for hard X-rays is nowadays one of the major criteria which drives the feasibility of imaging experiments and in general the performance of an experimental station for synchrotron-based microtomography and radiography. Here the luminescent screen used for the indirect detection is focused on in order to increase the detective quantum efficiency a novel scintillator based on doped Lu{sub 2}SiO{sub 5} (LSO), epitaxially grown as thin film via the liquid phase epitaxy technique. It is shown that, by using adapted growth and doping parameters as well as a dedicated substrate, the scintillation behaviour of a LSO-based thin crystal together with the high stopping power of the material allows for high-performance indirect X-ray detection. In detail, the conversion efficiency, the radioluminescence spectra, the optical absorption spectra under UV/visible-light and the afterglow are investigated. A set-up to study the effect of the thin-film scintillator's temperature on its conversion efficiency is described as well it delivers knowledge which is important when working with higher photon flux densities and the corresponding high heat load on the material. Additionally, X-ray imaging systems based on different diffraction-limited visible-light optics and CCD cameras using among others LSO-based thin film are compared. Finally, the performance of the LSO thin film is illustrated by imaging a honey bee leg, demonstrating the value of efficient high-resolution computed tomography for life sciences. (authors)

Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O., E-mail: Ozge.Tuzun@iness.c-strasbourg.f [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Slaoui, A.; Roques, S.; Focsa, A. [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Jomard, F.; Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France)

2009-10-01

In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventional furnace (CTP). We investigated the morphology of the resulting 2 {mu}m thick epi-layers by means of optical microscopy. An average grain size of about 40 {mu}m is formed after 90 s annealing at 1000 {sup o}C in RTP. The stress and degree of crystallinity of the epi-layers were studied by micro-Raman Spectroscopy and UV-visible spectrometer as a function of annealing time. The presence of compressive stress is observed from the peak position which shifts from 520.0 cm{sup -1} to 521.0 cm{sup -1} and 522.3 cm{sup -1} after CTP annealing for 10 min and 90 min, respectively. It is shown that the full width at half maximum (FWHM) varies from 9.8 cm{sup -1} to 15.6 cm{sup -1}, and the magnitude of stress is changing from 325 MPa to 650 MPa. Finally, the highest crystallinity is achieved after annealing at 1000 {sup o}C for 90 min in a tube furnace exhibiting a crystalline fraction of 81.5%. X-ray diffraction technique was used to determine the preferential orientation of the poly-Si thin films formed by SPE technique on n{sup +} type AIC layer. The preferential orientation is <100> for all annealing times at 1000 {sup o}C.

Van der Waals epitaxy of functional MoO{sub 2} film on mica for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Ma, Chun-Hao [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lin, Jheng-Cyuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Liu, Heng-Jui; Do, Thi Hien [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Zhu, Yuan-Min; Zhan, Qian [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Ha, Thai Duy; Juang, Jenh-Yih [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); He, Qing [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom); Arenholz, Elke [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Chiu, Po-Wen, E-mail: pwchiu@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chu, Ying-Hao, E-mail: yhc@nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-20

Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO{sub 2} films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO{sub 2} films are similar to those of the bulk. Flexible or free-standing MoO{sub 2} thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides.

Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Hussein, A. SH.; Hassan, Z.; Thahab, S.M.; Ng, S.S.; Hassan, H. Abu; Chin, C.W.

2011-01-01

The effect of Al mole fractions on the structural and electrical properties of Al x Ga 1-x N/GaN thin films grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si (1 1 1) substrates has been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. X-ray results revealed that the AlGaN/GaN/AlN was epitaxially grown on Si substrate. By applying Vegard's law, the Al mole fractions of Al x Ga 1-x N samples were found to be 0.11, 0.24, 0.30 and 0.43, respectively. The structural and morphology results indicated that there is a relatively larger tensile strain for the sample with the smallest Al mole fraction; while a smaller compressive strain and larger grain size appear with Al mole fraction equal to 0.30. The strain gets relaxed with the highest Al mole fraction sample. Finally, the linear relationship between the barrier height and Al mole fraction was obtained.

Magnetic structural effect (MSE in epitaxial films of cerium oxide and lanthanum zirconate

Directory of Open Access Journals (Sweden)

Fatima Kh. Chibirova

2015-06-01

Full Text Available Increasing the critical current density in the second generation high-temperature superconducting wires (2G HTS is the major challenge for researchers and manufacturers of 2G HTS wires all over the world. We proposed a new approach to increase the number of percolation paths for supercurrent, i.e. increasing the number of low angle grain boundaries (<5° in the epitaxial superconducting YBCO layer by magnetic structural processing (MSP of buffer layers. New experimental results have been presented on the application of MSP for improving the structure and increasing the texture sharpness of buffer in electrical conducting element of 2G HTS wire. The influence of MCO on the structural and textural properties has been investigated in a buffer consisting of epitaxial films of cerium oxide CeO2 and lanthanum zirconate La2Zr2O7 in the CeO2/4La2Zr2O7 architecture. The influence of the magnetic processing of the epitaxial La2Zr2O7 buffer film on the shape of grains has been found. An atomic force microscopical study has shown that after magnetic processing the shape of grains improved significantly. A multilayer CeO2/4La2Zr2O7 buffer each layer of which was processed in a magnetic field has a high degree of orientation: only one diffraction peak with (200 indexes is observed in the X-ray spectrum. The X-ray settings of the (200 diffraction peak indicate a well developed epitaxial structure of CeO2 and La2Zr2O7 layers. The texture of the buffer is by more than 2° sharper than that of the Ni–5 at% W substrate.

Large-area, laterally-grown epitaxial semiconductor layers

Science.gov (United States)

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

International Nuclear Information System (INIS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-01-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

Topotactic reductive synthesis of A-site cation-ordered perovskite YBaCo2O x (x = 4.5-5.5) epitaxial thin films

Science.gov (United States)

Katayama, Tsukasa; Chikamatsu, Akira; Fukumura, Tomoteru; Hasegawa, Tetsuya

2016-04-01

A-site cation-ordered perovskite YBaCo2O x epitaxial films were synthesized by combining pulsed-laser deposition and topotactic reduction using CaH2. The oxygen contents (x) of the films could be controlled in a range of 4.5-5.5 by adjusting the reaction temperature. The c-axis length of the YBaCo2O x films decreased with decreasing x when x ≥ 5.3 but drastically increased when x ˜ 4.5. In contrast, the in-plane lattice constants remained locked-in by the substrate after the reaction. The metal insulator transition observed in bulk YBaCo2O5.5 was substantially suppressed in the present film, likely because of the epitaxial strain effect. The resistivity of the films was significantly enhanced by changing the x value from ˜5.5 to ˜4.5, reflecting the distortion of the CoO x layers.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

Directory of Open Access Journals (Sweden)

A. Lastras-Martínez

2014-03-01

Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.

Science.gov (United States)

Nie, Yifan; Liang, Chaoping; Cha, Pil-Ryung; Colombo, Luigi; Wallace, Robert M; Cho, Kyeongjae

2017-06-07

Controlled growth of crystalline solids is critical for device applications, and atomistic modeling methods have been developed for bulk crystalline solids. Kinetic Monte Carlo (KMC) simulation method provides detailed atomic scale processes during a solid growth over realistic time scales, but its application to the growth modeling of van der Waals (vdW) heterostructures has not yet been developed. Specifically, the growth of single-layered transition metal dichalcogenides (TMDs) is currently facing tremendous challenges, and a detailed understanding based on KMC simulations would provide critical guidance to enable controlled growth of vdW heterostructures. In this work, a KMC simulation method is developed for the growth modeling on the vdW epitaxy of TMDs. The KMC method has introduced full material parameters for TMDs in bottom-up synthesis: metal and chalcogen adsorption/desorption/diffusion on substrate and grown TMD surface, TMD stacking sequence, chalcogen/metal ratio, flake edge diffusion and vacancy diffusion. The KMC processes result in multiple kinetic behaviors associated with various growth behaviors observed in experiments. Different phenomena observed during vdW epitaxy process are analysed in terms of complex competitions among multiple kinetic processes. The KMC method is used in the investigation and prediction of growth mechanisms, which provide qualitative suggestions to guide experimental study.

Strain-dependence of the structure and ferroic properties of epitaxial Ni1−xTi1−yO3 thin films grown on sapphire substrates

International Nuclear Information System (INIS)

Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Stephens, Sean A.; Manandhar, Sandeep; Shutthanandan, Vaithiyalingam; Colby, Robert J.; Hu, Dehong; Shelton, William A.; Chambers, Scott A.

2015-01-01

Polarization-induced weak ferromagnetism has been predicted a few years back in compounds MTiO 3 (M = Fe, Mn, Ni) (Fennie, 2008). We set out to stabilize this metastable, distorted perovskite structure by growing NiTiO 3 epitaxially on sapphire Al 2 O 3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni 1−x Ti 1−y O 3 films of different Ni/Ti ratios and thicknesses were deposited on Al 2 O 3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Néel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO 3 thin films by film stoichiometry and thickness. - Highlights: • NiTiO 3 epitaxial thin films with LiNbO 3 -type structure by pulsed laser deposition. • Strain varied by film thickness, stoichiometry, and synthesis temperature. • Systematic study of the effect of strain on film structure and physical properties. • Manipulation of ferroic properties by strain confirmed

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jenichen, B.; Herfort, J.; Jahn, U.; Trampert, A.; Riechert, H.

2014-01-01

We demonstrate Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe 3 Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe 3 Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe 3 Si film were found. The low substrate temperature T s of 150 °C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T s (225 °C) leads to a largely [111] oriented upper Fe 3 Si layer and polycrystal films. The high T s of 325 °C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. - Highlights: • Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures are grown by MBE. • The bottom Fe 3 Si film is always single crystalline. • The properties of the Ge film depend on the substrate temperature during deposition. • Optimum growth conditions lead to almost perfect epitaxy of Ge on Fe 3 Si

Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

KAUST Repository

Chen, Junze

2017-06-05

Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.

Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

Energy Technology Data Exchange (ETDEWEB)

Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

1993-01-30

Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface

International Nuclear Information System (INIS)

Zhou, H.; Narayan, J.

2006-01-01

Systems containing single domain magnetic particles are of great interest in view of their possible applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this work is plan-view STEM Z-contrast imaging study of the self-assembly growth of magnetic nickel nanostructures by domain matching epitaxy under Volmer-Weber (V-W) mode. The growth was carried out using pulsed laser deposition (PLD) technique with epitaxial titanium nitride film as the template, which was in turn grown on silicon (001) substrate via domain matching epitaxy. Our results show that the base of nickel islands is rectangular with the two principal edges parallel to two orthogonal directions, which is [110] and [1-bar 1 0] for [001] oriented growth. The size distribution of the islands is relatively narrow, comparable to that obtained from self-assembled islands grown under Stranski-Krastanow (S-K) mode. A certain degree of self-organization was also found in the lateral distribution of islands: island chains were observed along the directions close to , which are also the edge directions. The interaction between neighboring islands through the island edge-induced strain field is believed to be responsible for the size uniformity and the lateral ordering

Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

Science.gov (United States)

Samal, D.; Nakamura, H.; Takagi, H.

2016-07-01

A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ˜1020 cm-3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.

Science.gov (United States)

Mena, Josué; Carvajal, Joan J; Martínez, Oscar; Jiménez, Juan; Zubialevich, Vitaly Z; Parbrook, Peter J; Diaz, Francesc; Aguiló, Magdalena

2017-09-15

In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

Structure characterization of Pd/Co/Pd tri-layer films epitaxially grown on MgO single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki

2011-09-30

Pd/Co/Pd tri-layer films were prepared on MgO substrates of (001), (111), and (011) orientations at room temperature by ultra high vacuum rf magnetron sputtering. The detailed film structures around the Co/Pd and the Pd/Co interfaces are investigated by reflection high energy electron diffraction. Pd layers of (001){sub fcc}, (111){sub fcc}, and (011){sub fcc} orientations epitaxially grow on the respective MgO substrates. Strained fcc-Co(001) single-crystal layers are formed on the Pd(001){sub fcc} layers by accommodating the fairly large lattice mismatch between the Co and the Pd layers. On the Co layers,, Pd polycrystalline layers are formed. When Co films are formed on the Pd(111){sub fcc} and the Pd(011){sub fcc} layers, atomic mixing is observed around the Co/Pd interfaces and fcc-CoPd alloy phases are coexisting with Co crystals. The Co crystals formed on the Pd(111){sub fcc} layers consist of hcp(0001) + fcc(111) and Pd(111){sub fcc} epitaxial layers are formed on the Co layers. Co crystals epitaxially grow on the Pd(011){sub fcc} layers with two variants, hcp(11-bar 00) and fcc(111). On the Co layers, Pd(011){sub fcc} epitaxial layers are formed.

On-Demand Final State Control of a Surface-Bound Bistable Single Molecule Switch.

Science.gov (United States)

Garrido Torres, José A; Simpson, Grant J; Adams, Christopher J; Früchtl, Herbert A; Schaub, Renald

2018-04-12

Modern electronic devices perform their defined action because of the complete reliability of their individual active components (transistors, switches, diodes, and so forth). For instance, to encode basic computer units (bits) an electrical switch can be used. The reliability of the switch ensures that the desired outcome (the component's final state, 0 or 1) can be selected with certainty. No practical data storage device would otherwise exist. This reliability criterion will necessarily need to hold true for future molecular electronics to have the opportunity to emerge as a viable miniaturization alternative to our current silicon-based technology. Molecular electronics target the use of single-molecules to perform the actions of individual electronic components. On-demand final state control over a bistable unimolecular component has therefore been one of the main challenges in the past decade (1-5) but has yet to be achieved. In this Letter, we demonstrate how control of the final state of a surface-supported bistable single molecule switch can be realized. On the basis of the observations and deductions presented here, we further suggest an alternative strategy to achieve final state control in unimolecular bistable switches.

Chemical gating of epitaxial graphene through ultrathin oxide layers.

Science.gov (United States)

Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

2015-08-07

We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

International Nuclear Information System (INIS)

Norton, D.P.; Park, C.; Prouteau, C.

1998-04-01

The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds

International Nuclear Information System (INIS)

Monroy, E.; Gogneau, N.; Enjalbert, F.; Fossard, F.; Jalabert, D.; Bellet-Amalric, E.; Dang, Le Si; Daudin, B.

2003-01-01

We report on the controlled growth and characterization of quaternary AlGaInN compounds by plasma-assisted molecular beam epitaxy. Two-dimensional growth is achieved with a monolayer of In segregating at the growth front. In incorporation is hindered by increasing growth temperature and Al mole fraction, which is explained by the lower binding energy of InN compared to GaN and AlN. The mosaicity of the layers is determined by the substrate quality, whereas the alloy disorder increases with the Al content, independent of the In mole fraction. Room temperature photoluminescence is dominated by a narrow band-edge emission, whose Stokes shift and activation energy increase with the In content. This behavior is interpreted in terms of carrier localization in self-formed alloy inhomogeneities. An In-related band bowing parameter of 2.5 eV has been estimated

Epitaxial TiO 2/SnO 2 core-shell heterostructure by atomic layer deposition

KAUST Repository

Nie, Anmin

2012-01-01

Taking TiO 2/SnO 2 core-shell nanowires (NWs) as a model system, we systematically investigate the structure and the morphological evolution of this heterostructure synthesized by atomic layer deposition/epitaxy (ALD/ALE). All characterizations, by X-ray diffraction, high-resolution transmission electron microscopy, selected area electron diffraction and Raman spectra, reveal that single crystalline rutile TiO 2 shells can be epitaxially grown on SnO 2 NWs with an atomically sharp interface at low temperature (250 °C). The growth behavior of the TiO 2 shells highly depends on the surface orientations and the geometrical shape of the core SnO 2 NW cross-section. Atomically smooth surfaces are found for growth on the {110} surface. Rough surfaces develop on {100} surfaces due to (100) - (1 × 3) reconstruction, by introducing steps in the [010] direction as a continuation of {110} facets. Lattice mismatch induces superlattice structures in the TiO 2 shell and misfit dislocations along the interface. Conformal epitaxial growth has been observed for SnO 2 NW cores with an octagonal cross-section ({100} and {110} surfaces). However, for a rectangular core ({101} and {010} surfaces), the shell also derives an octagonal shape from the epitaxial growth, which was explained by a proposed model based on ALD kinetics. The surface steps and defects induced by the lattice mismatch likely lead to improved photoluminescence (PL) performance for the yellow emission. Compared to the pure SnO 2 NWs, the PL spectrum of the core-shell nanostructures exhibits a stronger emission peak, which suggests potential applications in optoelectronics. © The Royal Society of Chemistry 2012.

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Science.gov (United States)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Extraordinary epitaxial alignment of graphene islands on Au(111)

International Nuclear Information System (INIS)

Wofford, Joseph M; Dubon, Oscar D; Starodub, Elena; Nie Shu; Bartelt, Norman C; Thürmer, Konrad; McCarty, Kevin F; Walter, Andrew L; Bostwick, Aaron; Rotenberg, Eli

2012-01-01

Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30° rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films. (paper)

Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1996-01-01

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

Subsurface contributions in epitaxial rare-earth silicides

Energy Technology Data Exchange (ETDEWEB)

Luebben, Olaf; Shvets, Igor V. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin (Ireland); Cerda, Jorge I. [Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, Madrid (Spain); Chaika, Alexander N. [Institute of Solid State Physics, RAS, Chernogolovka (Russian Federation)

2015-07-01

Metallic thin films of heavy rare-earth silicides epitaxially grown on Si(111) substrates have been widely studied in recent years because of their appealing properties: unusually low values of the Schottky barrier height, an abrupt interface, and a small lattice mismatch. Previous studies also showed that these silicides present very similar atomic and electronic structures. Here, we examine one of these silicides (Gd{sub 3}Si{sub 5}) using scanning tunneling microscopy (STM) image simulations that go beyond the Tersoff-Hamann approach. These simulations strongly indicate an unusual STM depth sensitivity for this system.

Magnetic properties of novel epitaxial films

International Nuclear Information System (INIS)

Bader, S.D.; Moog, E.R.

1986-09-01

The surface magneto-optic Kerr effect (SMOKE) is used to explore the magnetism of ultra-thin Fe Films extending into the monolayer regime. Both bcc α-Fe and fcc γ-Fe single-crystalline, multilayer films are prepared on the bulk-terminated (1 x 1) structures of Au(100) and Cu(100), respectively. The characterizations of epitaxy and growth mode are performed using low energy electron diffraction and Auger electron spectroscopy. Monolayer-range Fe/Au(100) is ferromagnetic with a lower Curie temperature than bulk α-Fe. The controversial γ-Fe/Cu(100) system exhibits a striking, metastable, surface magnetic phase at temperatures above room temperature, but does not exhibit bulk ferromagnetism

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Science.gov (United States)

Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro

2018-06-01

On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

Science.gov (United States)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

International Nuclear Information System (INIS)

Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei

2014-01-01

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing

Improved radiation tolerance of MAPS using a depleted epitaxial layer

Energy Technology Data Exchange (ETDEWEB)

Dorokhov, A., E-mail: Andrei.Dorokhov@IReS.in2p3.f [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Deveaux, M. [Goethe-Universitaet Frankfurt am Main, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Doziere, G.; Dulinski, W. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Fontaine, J.-C. [Groupe de Recherche en Physique des Hautes Energies (GRPHE), Universite de Haute Alsace, 61, rue Albert Camus, 68093 Mulhouse (France); Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

2010-12-11

Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10{mu}m pitch device was found to be {approx}10{sup 13}n{sub eq}/cm{sup 2}, while it was only 2x10{sup 12}n{sub eq}/cm{sup 2} for a 20{mu}m pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10{sup 14}) n{sub eq}/cm{sup 2}. This goal relies on a fabrication process featuring a 15{mu}m thin, high resistivity ({approx}1k{Omega}cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages (<5V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of {approx}50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered (3x10{sup 13}n{sub eq}/cm{sup 2}), making evidence of a significant extension of the radiation tolerance limits of MAPS.

Growth of high purity semiconductor epitaxial layers by liquid phase ...

Indian Academy of Sciences (India)

Unknown

semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types

Energy Technology Data Exchange (ETDEWEB)

Seredin, P. V., E-mail: paul@phys.vsu.ru; Lenshin, A. S. [Voronezh State University (Russian Federation); Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru; Zhabotinskii, A. V.; Nikolaev, D. N.; Tarasov, I. S.; Shamakhov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Prutskij, Tatiana, E-mail: prutskiy@yahoo.com [Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias (Mexico); Leiste, Harald; Rinke, Monika [Karlsruhe Nano Micro Facility (Germany)

2017-01-15

The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al{sub x}Ga{sub 1–x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

Molecular-beam epitaxial growth and ion-beam analysis systems for functional materials research

International Nuclear Information System (INIS)

Takeshita, H.; Aoki, Y.; Yamamoto, S.; Naramoto, H.

1992-01-01

Experimental systems for molecular beam epitaxial growth and ion beam analysis have been designed and constructed for the research of inorganic functional materials such as thin films and superlattices. (author)

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

International Nuclear Information System (INIS)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

2015-01-01

Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

Science.gov (United States)

Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

2009-08-01

BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

Visible light carrier generation in co-doped epitaxial titanate films

Energy Technology Data Exchange (ETDEWEB)

Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

2015-03-02

Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

International Nuclear Information System (INIS)

Noda, Takeshi; Mano, Takaaki

2008-01-01

An InAs ring structure accompanying the formation of quantum dots (QDs) was fabricated on (1 0 0)GaAs using droplet epitaxy. The QDs were located in the vicinity of the ring, due to the diffusion of In atoms from the In droplets. In addition, the dots were found to have distributed elliptically and preferentially along the [0 1 1] direction, implying that In itself prefers to diffuse along the [0 1 1] direction, which is the opposite of the favorable diffusion orientation of group III atoms on (1 0 0)GaAs under a commonly used As-stabilized growth condition. This is the first observation of a ring structure accompanying the formation of quantum dots in droplet epitaxy

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Science.gov (United States)

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

2014-01-01

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Energy Technology Data Exchange (ETDEWEB)

Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

2014-01-30

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

DEFF Research Database (Denmark)

Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Shuo-Ting You

2015-12-01

Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Feigl, L.; McGilly, L. J.; Sandu, C. S.; Setter, N. [Ceramics Laboratory, EPFL - Swiss Federal Institute of Technology, Lausanne CH-1015 (Switzerland)

2014-04-28

Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr,Ti)O{sub 3} thin films, of very low defect density, grown on DyScO{sub 3} substrates. The effect of 180° switching on well-ordered a/c 90° domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement.

Step driven competitive epitaxial and self-limited growth of graphene on copper surface

Directory of Open Access Journals (Sweden)

Lili Fan

2011-09-01

Full Text Available The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible.

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

2011-01-01

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2011-07-06

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites

Energy Technology Data Exchange (ETDEWEB)

Andersen, Tassie K. [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Cook, Seyoung [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Wan, Gang [Materials Science; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Marks, Laurence D. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Fong, Dillon D. [Materials Science

2018-01-31

Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.

Epitaxial Growth of a Methoxy-Functionalized Quaterphenylene on Alkali Halide Surfaces

DEFF Research Database (Denmark)

Balzer, Frank; Sun, Rong; Parisi, Jürgen

2015-01-01

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of lowenergy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X...

Sub-monolayer growth of titanium, cobalt, and palladium on epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Sokolova, Anastasia; Kilchert, Franziska; Schneider, M. Alexander [Lehrstuhl fuer Festkoerperphysik, Friedrich-Alexander Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Link, Stefan; Stoehr, Alexander; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2017-11-15

We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene on SiC(0001) and studied the early stages of growth in the sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three metals do not wet the substrate and Ostwalt ripening occurs at temperatures below 400 K. The analysis of the epitaxial orientation of the metal adislands revealed their specific alignment to the graphene lattice. It is found that the apparent height of the islands as measured by STM strongly deviates from their true topographic height. This is interpreted as an indication of the presence of scattering processes within the metal particles that increase the transparency of the metal-graphene interface for electrons. Even large islands are easily picked up by the tip of the STM allowing insight into the bonding between metal island and graphene surface and into mechanisms leading to metal intercalation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Approaching the Dirac point in high-mobility multilayer epitaxial graphene

Czech Academy of Sciences Publication Activity Database

Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

2008-01-01

Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA -CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Characterization of GaN/AlGaN epitaxial layers grown by ...

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical ... reported by introducing annealing of the GaN layer in nitrogen [5], Fe doping [6], .... [2] Y F Wu, S M Wood, R P Smith, S Sheppard, S T Allen, P Parikh and J Milligan,.

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Directory of Open Access Journals (Sweden)

Lijuan Wang

2017-02-01

Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

Epitaxially Grown Ultra-Flat Self-Assembling Monolayers with Dendrimers

Directory of Open Access Journals (Sweden)

Takane Imaoka

2018-02-01

Full Text Available Mono-molecular films formed by physical adsorption and dendrimer self-assembly were prepared on various substrate surfaces. It was demonstrated that a uniform dendrimer-based monolayer on the subnanometer scale can be easily constructed via simple dip coating. Furthermore, it was shown that an epitaxially grown monolayer film reflecting the crystal structure of the substrate (highly ordered pyrolytic graphite (HOPG can also be formed by aligning specific conditions.

Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

Energy Technology Data Exchange (ETDEWEB)

Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

2011-10-31

Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

International Nuclear Information System (INIS)

Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

1998-01-01

The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

Growth kinetics and properties of ZnO/ZnMgO heterostructures grown by radical-source molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ivanov, S.V. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation); El-Shaer, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Shubina, T.V.; Listoshin, S.B. [Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation)

2007-07-01

A phenomenological approach to quantitative description of Zn(Mg)O growth by radical-source molecular beam epitaxy, based on the experimental studies of RHEED intensity oscillations, has been developed. It allows a precise control of growth rate, composition and stoichiometry at any growth temperature, Along with optimization of a growth initiation procedure on a c-sapphire, it is necessary condition for fabrication of high quality ZnO epilayers and ZnO/ZnMgO heterostructures in a wide Mg composition range. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

Science.gov (United States)

Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

2014-03-01

SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

Science.gov (United States)

Lin, Yu-Chuan; Li, Jun; de La Barrera, Sergio C.; Eichfeld, Sarah M.; Nie, Yifan; Addou, Rafik; Mende, Patrick C.; Wallace, Robert M.; Cho, Kyeongjae; Feenstra, Randall M.; Robinson, Joshua A.

2016-04-01

Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe2 and graphene and employ a charge transfer model to determine the WSe2 carrier density in both cases. The results indicate that WSe2-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe2, whereas WSe2-EGPH forms a Schottky barrier junction.Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

International Nuclear Information System (INIS)

Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

2006-01-01

The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

Epitaxial growth of lithium fluoride on the (1 1 1) surface of CaF 2

Science.gov (United States)

Klumpp, St; Dabringhaus, H.

1999-08-01

Growth of lithium fluoride by molecular beam epitaxy on the (1 1 1) surface of calcium fluoride crystals was studied by TEM and LEED for crystal temperatures from 400 to 773 K and impinging lithium fluoride fluxes from 3×10 11 to 3×10 14 cm -2 s -1. Growth starts, usually, at the steps on the (1 1 1) surface of CaF 2. For larger step distances and at later growth stages also growth on the terraces between the steps is found. Preferably, longish, roof-like crystallites are formed, which can be interpreted by growth of LiF(2 0 1¯)[0 1 0] parallel to CaF 2(1 1 1)[ 1¯ 0 1]. To a lesser extent square crystallites, i.e. growth with LiF(0 0 1), and, rarely, three-folded pyramidal crystallites, i.e. growth with LiF(1 1 1) parallel to CaF 2(1 1 1), are observed. While the pyramidal crystallites show strict epitaxial orientation with LiF[ 1¯ 0 1]‖CaF 2[ 1¯ 0 1] and LiF[ 1¯ 0 1]‖CaF 2[1 2¯ 1], only about 80% of the square crystallites exhibit an epitaxial alignment, where LiF[1 0 0]‖CaF 2[ 1¯ 0 1] is preferred to LiF[1 1 0]‖CaF 2[ 1¯ 0 1]. The epitaxial relationships are discussed on the basis of theoretically calculated adsorption positions of the lithium fluoride monomer and dimer on the terrace and at the steps of the CaF 2(1 1 1) surface.

Sensor guided control and navigation with intelligent machines. Final technical report

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Bijoy K.

2001-03-26

This item constitutes the final report on ''Visionics: An integrated approach to analysis and design of intelligent machines.'' The report discusses dynamical systems approach to problems in robust control of possibly time-varying linear systems, problems in vision and visually guided control, and, finally, applications of these control techniques to intelligent navigation with a mobile platform. Robust design of a controller for a time-varying system essentially deals with the problem of synthesizing a controller that can adapt to sudden changes in the parameters of the plant and can maintain stability. The approach presented is to design a compensator that simultaneously stabilizes each and every possible mode of the plant as the parameters undergo sudden and unexpected changes. Such changes can in fact be detected by a visual sensor and, hence, visually guided control problems are studied as a natural consequence. The problem here is to detect parameters of the plant and maintain st ability in the closed loop using a ccd camera as a sensor. The main result discussed in the report is the role of perspective systems theory that was developed in order to analyze such a detection and control problem. The robust control algorithms and the visually guided control algorithms are applied in the context of a PUMA 560 robot arm control where the goal is to visually locate a moving part on a mobile turntable. Such problems are of paramount importance in manufacturing with a certain lack of structure. Sensor guided control problems are extended to problems in robot navigation using a NOMADIC mobile platform with a ccd and a laser range finder as sensors. The localization and map building problems are studied with the objective of navigation in an unstructured terrain.

Molecular beam epitaxy of LiMnAs

Czech Academy of Sciences Publication Activity Database

Novák, Vít; Cukr, Miroslav; Šobáň, Zbyněk; Jungwirth, Tomáš; Martí, X.; Holý, V.; Horodyská, P.; Němec, P.

2011-01-01

Roč. 323, č. 1 (2011), s. 348-350 ISSN 0022-0248 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : crystal structure * molecular beam epitaxy * lithium compounds * magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.726, year: 2011

Composition tailoring in the Ce-doped multicomponent garnet epitaxial film scintillators

Czech Academy of Sciences Publication Activity Database

Průša, Petr; Kučera, M.; Mareš, Jiří A.; Onderišinová, Z.; Hanuš, M.; Babin, Vladimir; Beitlerová, Alena; Nikl, Martin

2015-01-01

Roč. 15, č. 8 (2015), s. 3715-3723 ISSN 1528-7483 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillation * liquid phase epitaxy * photoelectron yield * Ce 3+ * multicomponent garnet Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.425, year: 2015

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

1994-01-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

1994-11-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Lee, Daesu; Noh, Tae Won, E-mail: twnoh@snu.ac.kr [Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-742 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2016-05-09

Ferroelectrics have recently attracted attention as a new class of materials for use in optical and photovoltaic devices. We studied the electronic properties in epitaxially stabilized ferroelectric hexagonal Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} (x = 0, 0.33, 0.67, and 1) thin films. Our films exhibited systematic changes in electronic structures, such as bandgap and optical transitions, according to the Ga concentration. In particular, the bandgap increased systematically from 1.4 to 3.2 eV, including the visible light region, with increasing Ga concentration from x = 0 to 1. These systematic changes, attributed to lattice parameter variations in epitaxial Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} films, should prove useful for the design of optoelectronic devices based on ferroelectrics.

Epitaxially Grown Films of Standing and Lying Pentacene Molecules on Cu(110) Surfaces

Science.gov (United States)

2011-01-01

Here, it is shown that pentacene thin films (30 nm) with distinctively different crystallographic structures and molecular orientations can be grown under essentially identical growth conditions in UHV on clean Cu(110) surfaces. By X-ray diffraction, we show that the epitaxially oriented pentacene films crystallize either in the “thin film” phase with standing molecules or in the “single crystal” structure with molecules lying with their long axes parallel to the substrate. The morphology of the samples observed by atomic force microscopy shows an epitaxial alignment of pentacene crystallites, which corroborates the molecular orientation observed by X-ray diffraction pole figures. Low energy electron diffraction measurements reveal that these dissimilar growth behaviors are induced by subtle differences in the monolayer structures formed by slightly different preparation procedures. PMID:21479111

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

International Nuclear Information System (INIS)

Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

Polarized Emission from Conjugated Polymer Chains Aligned by Epitaxial Growth during Off-Center Spin-Coating

Directory of Open Access Journals (Sweden)

Takuya Anzai

2017-01-01

Full Text Available Due to their macromolecular nature, conjugated polymers can be relatively easily aligned by applying a variety of processes resulting in either elongation or ordering of their conjugated backbones. Processes that induce chain alignment include electrospinning, mechanical rubbing, epitaxial growth, and nanoconfinement and unidirectional deposition techniques such as off-center spin-coating. In this study, we compare these deposition techniques by applying them to a green-emitting conjugated polymer material that exhibits liquid crystalline phase behavior. Our study reveals that while methods such as electrospinning and mechanical rubbing can be useful to locally generate polymer chain alignment, the combination of epitaxial growth using 1,3,5-trichlorobenzene as crystallizing agent with off-center spin-coating results in the formation of anisotropic nanofiber-like structures with enhanced crystallinity degree and polarized light-emission properties. The unidirectional epitaxial growth was also applied to a red-emitting polymer that exhibits polarization ratios up to 4.1. Our results emphasize that this simple solution formulation and process can be used for the fabrication of polarized thin films of a variety of conjugated polymers with potential applications in the advanced display technologies or analytical equipment fields.