Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Abdel-Galil, A. [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Balboul, M.R., E-mail: m_balboul@yahoo.com [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Sharaf, A. [Radiation Engineering Department, NCRRT, Atomic Energy Authority, Cairo (Egypt)

2015-11-15

In the present work undoped and Mn doped ZnO nanoparticles (ZnO:Mn), diluted magnetic semiconductors, were successfully synthesized by the sol–gel method at room temperature. The morphology of ZnO nanoparticles constituted by flower-like structures with hexagonal morphologies that changed significantly after the incorporation of Mn. Rietveld refinements results showed that Mn ions are successfully doped into ZnO matrix without altering its wurtzite phase. Meanwhile, Raman spectroscopy analyses confirm the wurtzite structure of undoped ZnO and ZnO:Mn nanoparticles. The lattice parameters increase with increasing Mn content due to the large ionic radius of Mn{sup 2+} compared to that of Zn{sup 2+}. Electron spin resonance measurements were performed to gain information about oxidation state and site occupancy of the magnetic Mn ions in the ZnO lattice. Moreover, UV–vis absorption spectra have been utilized to calculate the optical band gap of the undoped ZnO and ZnO:Mn nanoparticles before and after different γ-irradiation doses. The band gap of ZnO:Mn (2%) is 2.62 eV which is noticeably smaller than the 3.26 eV of undoped ZnO. The thermal decomposition properties of the prepared nanoparticle samples were also studied using simultaneous Thermogravimetric analysis in temperature range from 30 to 500 °C.

Ultraviolet Sensing by Al-doped ZnO Thin Films

International Nuclear Information System (INIS)

Rashid, A.R.A.; Menon, P.S.; Shaari, S.

2011-01-01

We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

Room temperature ferromagnetism and gas sensing in ZnO nanostructures: Influence of intrinsic defects and Mn, Co, Cu doping

Energy Technology Data Exchange (ETDEWEB)

Mhlongo, Gugu H., E-mail: gmhlongo@csir.co.za [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Shingange, Katekani; Tshabalala, Zamaswazi P.; Dhonge, Baban P. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Mahmoud, Fawzy A. [Solid State Physics Dept., National Research Centre, P.O. 12622, Dokki, Giza (Egypt); Mwakikunga, Bonex W.; Motaung, David E. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa)

2016-12-30

Highlights: • Preparation of Mn, Co, Cu doped ZnO via microwave-assisted method. • Doping alters the morphology of ZnO nanostructures. • Concentration of zinc and oxygen related defects vary with doping. • Correlation between PL and EPR was established. • Both undoped and doped ZnO nanostructures showed selectivity towards NH{sub 3}. - Abstract: Undoped and transition metal (Cu, Co and Mn) doped ZnO nanostructures were successfully prepared via a microwave-assisted hydrothermal method followed by annealing at 500 °C. Numerous characterization facilities such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM) were employed to acquire the structural and morphological information of the prepared ZnO based products. Combination of defect structure analysis based on photoluminescence (PL) and electron paramagnetic resonance (EPR) indicated that co-existing oxygen vacancies (V{sub O}) and zinc interstitials (Zn{sub i}) defects are responsible for the observed ferromagnetism in undoped and transition metal (TM) doped ZnO systems. PL analysis demonstrated that undoped ZnO has more donor defects (V{sub O} and Zn{sub i}) which are beneficial for gas response enhancement. Undoped ZnO based sensor exhibited a higher sensor response to NH{sub 3} gas compared to its counterparts owing to high content of donor defects while transition metal doped sensors showed short response and recovery times compared to undoped ZnO.

Influence of Dopants in ZnO Films on Defects

Science.gov (United States)

Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

2008-12-01

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

Energy Technology Data Exchange (ETDEWEB)

Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)

2012-03-15

Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

Electrical characterization of ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

2007-05-15

Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Study of the thermal conductivity of ZnO nanowires/PMMA composites

International Nuclear Information System (INIS)

Igamberdiev, Kh. T.; Yuldashev, Sh. U.; Cho, H. D.; Kang, T. W.; Rakhimova, Sh. M.; Akhmedov, T. Kh.

2012-01-01

From thermal conductivity measurements on ZnO nanowires (NWs)/poly(methyl methacrylate) PMMA composites, the thermal conductivities of the ZnO nanowires were determined. The thermal conductivity of a ZnO NW decreases considerably with decreasing nanowire diameter, and for a ZnO nanowire with a diameter of 250 nm, the thermal conductivity at room temperature is approximately two times lower than that of bulk ZnO at the same temperature. The results of this study show that the thermal conductivity of a ZnO NW is mainly determined by increased phonon-surface boundary scattering. These results could be useful for the design of ZnO-nanowire-based devices.

Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

Directory of Open Access Journals (Sweden)

Domenico D’Agostino

2017-05-01

Full Text Available Piezoelectricity and charge storage of undoped and Co-doped ZnO thin films were investigated by means of PiezoResponse Force Microscopy and Kelvin Probe Force Microscopy. We found that Co-doped ZnO exhibits a large piezoelectric response, with the mean value of piezoelectric matrix element d33 slightly lower than in the undoped sample. Moreover, we demonstrate that Co-doping affects the homogeneity of the piezoelectric response, probably as a consequence of the lower crystalline degree exhibited by the doped samples. We also investigate the nature of the interface between a metal electrode, made up of the PtIr AFM tip, and the films as well as the phenomenon of charge storage. We find Schottky contacts in both cases, with a barrier value higher in PtIr/ZnO than in PtIr/Co-doped ZnO, indicating an increase in the work function due to Co-doping.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2016-07-06

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

Directory of Open Access Journals (Sweden)

Singh A.

2015-12-01

Full Text Available In this work, zinc oxide (ZnO nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP at room temperature. X-ray diffraction (XRD result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis absorption band is around 355 nm (blue shifted as compared to the bulk. The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

ZnO based transparent conductive oxide films with controlled type of conduction

Energy Technology Data Exchange (ETDEWEB)

Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

2014-11-28

The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

2016-02-29

In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

Science.gov (United States)

Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

2018-05-01

In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

International Nuclear Information System (INIS)

Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R.J.; Phase, D.M.

2016-01-01

The structural, magnetic and magneto-transport of undoped ZnO, Zn_0_._9_7Al_0_._0_3O, Zn_0_._9_5Fe_0_._0_5O and Zn_0_._9_2Al_0_._0_3Fe_0_._0_5O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

Energy Technology Data Exchange (ETDEWEB)

Kumar, Santosh, E-mail: skphysics@yahoo.co.in [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Deepika [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Tripathi, Malvika [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Vaibhav, Pratyush [Jaypee University of Engineering and Technology, Guna 473226, Madhya Pradesh (India); Kumar, Aman [Indian Institute of Technology, Roorkee (India); Kumar, Ritesh [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Choudhary, R.J., E-mail: ram@csr.res.in [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Phase, D.M. [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India)

2016-12-01

The structural, magnetic and magneto-transport of undoped ZnO, Zn{sub 0.97}Al{sub 0.03}O, Zn{sub 0.95}Fe{sub 0.05}O and Zn{sub 0.92}Al{sub 0.03}Fe{sub 0.05}O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

2009-07-01

Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

Annealed Ce{sup 3+}-doped ZnO flower-like morphology synthesized by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Koao, Lehlohonolo F., E-mail: koaolf@ufs.ac.za [Department of Physics, University of the Free State (Qwa Qwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, Francis B.; Tsega, Moges [Department of Physics, University of the Free State (Qwa Qwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

2016-01-01

We have successfully synthesized ZnO:xmol% Ce{sup 3+} (0≤x≤10 mol%) doped nanopowders via the chemical bath deposition method (CBD) technique at low temperature (80 °C) and annealed in air at 700 °C. The X-ray diffraction patterns showed that all the undoped and Ce-doped ZnO nanopowders have a hexagonal wurtzite polycrystalline structure with an average crystallite size of about 46 nm. Weak diffraction peaks related mainly to cerium oxide were also detected at higher concentrations of Ce{sup 3+} (x=5–10 mol%). The scanning electron microscopy study revealed that the nanopowder samples were assembled in flower-shaped undoped ZnO and pyramid-shaped Ce{sup 3+}-doped ZnO nanostructures. The UV–vis spectra showed that the absorption edges shifted slightly to the longer wavelengths with the increase in the Ce{sup 3+} ions concentration. Moreover, the photoluminescence (PL) results showed a relative weak visible emission for the Ce{sup 3+}-doped ZnO nanoparticles compared to the undoped ZnO. The effects of Ce{sup 3+}-doping on the structure and PL of ZnO nanopowders are discussed in detail.

Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

Energy Technology Data Exchange (ETDEWEB)

Moafi, Hadi Fallah, E-mail: Fallah.m@guilan.ac.ir [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of); Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of)

2013-05-15

A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO.

Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

International Nuclear Information System (INIS)

Moafi, Hadi Fallah; Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah

2013-01-01

A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO

Observation of Zn vacancies in ZnO grown by chemical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, F.; Saarinen, K. [Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 TKK (Finland); Grasza, K.; Mycielski, A. [Institute of Physics, Polish Academy of Sciences, Lotnikow 32/46, 02-668 Warsaw (Poland)

2006-03-15

We have used positron annihilation spectroscopy to study the vacancy defects in ZnO crystals grown by both the conventional and contactless chemical vapor transport (CVT and CCVT). Our results show that Zn vacancies or Zn vacancy related defects are present in as-grown ZnO, irrespective of the growth method. Zn vacancies are observed in CVT-grown undoped ZnO and (Zn,Mn)O. The Zn vacancies present in undoped CCVT-ZnO are the dominant negatively charged point defect in the material. Doping the material with As introduces also Zn vacancy-related defect complexes with larger open volume. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of cobalt doping on the mechanical properties of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Vahtrus, Mikk; Šutka, Andris [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Polyakov, Boris [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Oras, Sven; Antsov, Mikk [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Doebelin, Nicola [RMS Foundation, Bischmattstrasse 12, Bettlach 2544 (Switzerland); Institute of Geological Sciences, University of Bern, Baltzerstrasse 1–3, Bern 3012 (Switzerland); Lõhmus, Rünno; Nõmmiste, Ergo [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Vlassov, Sergei, E-mail: vlassovs@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia)

2016-11-15

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases were close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.

Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

Energy Technology Data Exchange (ETDEWEB)

Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H

1997-07-01

The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

The crystallization and physical properties of Al-doped ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Chen, K.J. [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fang, T.H. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Hung, F.Y. [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)], E-mail: fyhung@mail.mse.ncku.edu.tw; Ji, L.W. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Chang, S.J.; Young, S.J. [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hsiao, Y.J. [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

2008-07-15

Un-doped Al (0-9 at.%) nanoparticles and doped ZnO powders were prepared by the sol-gel method. The nanoparticles were heated at 700-800 deg. C for 1 h in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). The results of un-doped (ZnO) and Al-doped ZnO (AZO) nanoparticles were also compared to investigate the structural characteristics and physical properties. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that micro-Al ions were substituted for Zn atoms and there were no variations in the structure of the ZnO nanoparticles. From the XRD and SEM data, the grain size of the AZO nanoparticles increased from 34.41 to 40.14 nm when the annealing temperature was increased. The Raman intensity of the AZO nanoparticles (Al = 5 at.%) increased when the annealing temperature was increased. Increasing the degree of crystalline not only reduced the residual stress, but also improved the physical properties of the nanoparticles.

The crystallization and physical properties of Al-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Chen, K.J.; Fang, T.H.; Hung, F.Y.; Ji, L.W.; Chang, S.J.; Young, S.J.; Hsiao, Y.J.

2008-01-01

Un-doped Al (0-9 at.%) nanoparticles and doped ZnO powders were prepared by the sol-gel method. The nanoparticles were heated at 700-800 deg. C for 1 h in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). The results of un-doped (ZnO) and Al-doped ZnO (AZO) nanoparticles were also compared to investigate the structural characteristics and physical properties. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that micro-Al ions were substituted for Zn atoms and there were no variations in the structure of the ZnO nanoparticles. From the XRD and SEM data, the grain size of the AZO nanoparticles increased from 34.41 to 40.14 nm when the annealing temperature was increased. The Raman intensity of the AZO nanoparticles (Al = 5 at.%) increased when the annealing temperature was increased. Increasing the degree of crystalline not only reduced the residual stress, but also improved the physical properties of the nanoparticles

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

Science.gov (United States)

Darunkar, Swapnil S.; Acharya, Smita A.

2018-05-01

Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

The effect of Co and In combinational or individual doping on the structural, optical and selective sensing properties of ZnO nanoparticles

CSIR Research Space (South Africa)

Maswanganye, MW

2017-08-01

Full Text Available , is found to increase the response to all stimuli to higher values than undoped or singly doped ZnO sensors at the expense of selectivity where In-Co-ZnO as well as undoped ZnO and Co-ZnO sensors have similar selectivity value of below 44% to CO. In-doped Zn...

Defect engineering of ZnO

Energy Technology Data Exchange (ETDEWEB)

Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

2008-10-31

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

Defect engineering of ZnO

International Nuclear Information System (INIS)

Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

2008-01-01

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

2015-02-15

Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

Effect of co-doping process on topography, optical and electrical properties of ZnO nanostructured

Science.gov (United States)

Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Syamsir, S. A.; Khusaimi, Z.; Rusop, M.

2018-05-01

We investigated of Undoped ZnO and Magnesium (Mg)-Aluminium (Al) co-doped Zinc Oxide (MAZO) nanostructured films were prepared by sol gel spin coating technique. The surface topography was analyzed using Atomic Force Microscopy (AFM). Based on the AFM results, Root Mean Square (RMS) of MAZO films have rougher surface compared to pure ZnO films. The optical and electrical properties of thin film samples were characterized using Uv-Vis spectroscopy and two point probes, current-voltage (I-V) measurements. The transmittance spectra for both thin samples was above 80% in the visible wavelength. The MAZO film shows the highest conductivity compared to pure ZnO films. This result indicates that the improvement of carrier mobility throughout doping process and possibly contribute by extra ion charge.

Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

Directory of Open Access Journals (Sweden)

Tamil Many K Thandavan

Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

Science.gov (United States)

Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

2015-01-01

Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

2013-10-01

Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

Oxygen vacancies: The origin of n -type conductivity in ZnO

Science.gov (United States)

Liu, Lishu; Mei, Zengxia; Tang, Aihua; Azarov, Alexander; Kuznetsov, Andrej; Xue, Qi-Kun; Du, Xiaolong

2016-06-01

Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n -type conductivity in ZnO has been still unsettled in the past 50 years. Here, we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n -type conductivity as well as the nonstoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

Energy Technology Data Exchange (ETDEWEB)

Mohan, R. Raj [Department of ECE, Gojan School of Business and Technology, Chennai (India); Rajendran, K. [Department of Electronics, Government Arts College for Women, Ramanathapuram, TN (India); Sambath, K. [Department of ECS, Sri Krishna Arts and Science College, Coimbatore, TN (India)

2014-01-28

In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

Energy Technology Data Exchange (ETDEWEB)

Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

2016-11-30

Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in ZnO

Doping effect on the optical properties of ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Stoehr, M. [Frederick Seitz Materials Research Laboratory, University of Illinois,104 South Goodwin Avenue, Urbana, IL 61801 (United States); Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Juillaguet, S. [Groupe d' Etude des Semi-conducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Kyaw, T.M.; Wen, J.G. [Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France)

2007-04-15

High quality undoped and Ga{sub 2}O{sub 3} or In{sub 2}O{sub 3} doped ZnO nanostructures are grown by chemical vapor transport and condensation. The doping effect on the optical properties is investigated by photoluminescence. At room temperature, photoluminescence on Ga{sub 2}O{sub 3} doped ZnO nanostructures reveals an enhancement of the ultraviolet near band edge emission at 390 nm, while the intensity of the deep level emission at 530 nm weakens. At 5 K, an intense neutral-donor-bound exciton (D{sup 0}X) line dominates the undoped and doped ZnO photoluminescence spectra. The presence of well resolved two-electron satellite lines allow to determine the type of donors. At 5 K, the results indicate that ZnO nanostructures grown with 10% of Ga{sub 2}O{sub 3} display an excellent optical quality, proved by an intense D{sup 0}X line, a high intensity ratio between the D{sup 0}X line and the deep level emission as well as the presence of numerous phonon replicas of the main lines. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

Science.gov (United States)

Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

2018-02-01

Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

International Nuclear Information System (INIS)

Wu Yunfeng; Yu Naisen; Liu Dongping; He Yangyang; Liu Yuanda; Liang Hongwei; Du Guotong

2013-01-01

Highlights: ► The electrical properties of one individual lying ZnO nanorod were performed by C-AFM measurement. ► Inhomogeneous spatial current distribution was detected. ► Current was detected along the side facets while no current was detected in the top plane for ZnO nanorod. ► The side facets were more conductive than the top facets of ZnO nanorods. - Abstract: In this study, we have prepared ZnO nanorods on cracked GaN substrates using aqueous solution method. Unique electrical characterization of one individual lying ZnO nanorod is analyzed by conductive atomic force microscopy (C-AFM). Effect of anisotropy properties on the conductivity of a single nanorod has been investigated. The current maps of ZnO nanorods have been simultaneously recorded with the topography which is gained by AFM-contact mode. The C-AFM measurement present local current–voltage (I–V) characteristics of the side facets of one individual lying nanorod, however, no current is detected on the top facets of ZnO nanorods. Measurement results indicate that the side facets are more electrically active than the top facets of ZnO nanorods due to lower Schottky barrier height of the side facets.

Performance of Cr-doped ZnO for acetone sensing

Energy Technology Data Exchange (ETDEWEB)

Al-Hardan, N.H., E-mail: naif_imen@ukm.my [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Abdullah, M.J.; Aziz, A. Abdul [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-04-01

Zinc oxide (ZnO) doped with chromium (Cr) was synthesized by reactive co-sputtering for gas sensing applications. The effect of varying the contents of Cr (from 1 to 4 at%) on the ZnO gas sensor response was studied. X-ray diffraction analysis reveals the high orientation of c-axis of the prepared films. The optimum operating temperature of the undoped ZnO was 400 °C and shifted to 300 °C for the Cr-doped ZnO under the acetone vapour. The 1% Cr doping ZnO gas sensor was most sensitive for the acetone vapour. The ability of the 1% Cr-doped ZnO to produce repeatable results under different acetone vapour concentrations was tested. The timing properties of the doped Cr ZnO gas sensor were 70 and 95 s for the rise and recovery time respectively.

Effect of Eu{sup 3+} on the structure, morphology and optical properties of flower-like ZnO synthesized using chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Kroon, R.E. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

2014-03-15

The chemical bath deposition (CBD) method was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. The Eu{sup 3+} concentration was varied from 0.2 to 5 mol%. The X-ray diffraction (XRD) spectra of the undoped and low concentration Eu{sup 3+} doped ZnO nanostructures correspond to the various planes of a single hexagonal ZnO phase. The estimated crystalline grain size was calculated using the XRD spectra and was found to be in the order of 47±5 nm and independent on the Eu{sup 3+} ion concentration up to 4 mol%. Scanning electron microscopy (SEM) micrographs, however, indicate that the addition of Eu{sup 3+} influences the morphology of the samples. In the UV–vis study the highest band gap energy was obtained for the undoped ZnO. The effective band gap energy of the ZnO decayed exponentially with the addition of Eu{sup 3+} up to 4 mol% where impurity phases started to appear. Although weak luminescence was observed for excitation above the bandgap at 300 nm the best results were obtained by exciting the Eu{sup 3+} directly through the {sup 7}F{sub 0}→{sup 5}L{sub 6} absorption band at 395 nm. Excitation at a wavelength of 395 nm produced the highest Eu{sup 3+} luminescence intensity without any noticeable ZnO defect emissions. The maximum luminescence intensity for this excitation was obtained for ZnO:3 mol% Eu{sup 3+} ions and luminescent quenching was observed for higher Eu concentrations. -- Highlights: • CBD was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. • The powders having particles with flower-like morphology with good optical properties. • Weak luminescence for excitation above the bandgap at 300 nm. • Excitation at 395 nm produced the highest pure Eu{sup 3+} luminescence.

Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

Science.gov (United States)

Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

2018-04-01

Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

ZnO Coatings with Controlled Pore Size, Crystallinity and Electrical Conductivity

Directory of Open Access Journals (Sweden)

Roman SCHMACK

2016-05-01

Full Text Available Zinc oxide is a wide bandgap semiconductor with unique optical, electrical and catalytic properties. Many of its practical applications rely on the materials pore structure, crystallinity and electrical conductivity. We report a synthesis method for ZnO films with ordered mesopore structure and tuneable crystallinity and electrical conductivity. The synthesis relies on dip-coating of solutions containing micelles of an amphiphilic block copolymer and complexes of Zn2+ ions with aliphatic ligands. A subsequent calcination at 400°C removes the template and induces crystallization of the pore walls. The pore structure is controlled by the template polymer, whereas the aliphatic ligands control the crystallinity of the pore walls. Complexes with a higher thermal stability result in ZnO films with a higher content of residual carbon, smaller ZnO crystals and therefore lower electrical conductivity. The paper discusses the ability of different types of ligands to assist in the synthesis of mesoporous ZnO and relates the structure and thermal stability of the precursor complexes to the crystallinity and electrical conductivity of the zinc oxide.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8634

Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports.

Science.gov (United States)

V T K P, Fidal; Inguva, Saikumar; Krishnamurthy, Satheesh; Marsili, Enrico; Mosnier, Jean-Paul; T S, Chandra

2017-01-01

Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ∼100nm and surface roughness of 10nm. Hall effect measurements showed that the sheet carrier concentration was -1.44×10 15 cm -2 for AZO and -6×10 14 cm -2 for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042Umg -1 ) compared to AZO (0.032Umg -1 ), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5μAmM -1 cm -2 towards glucose for GOx/AZO and 2.2μAmM -1 cm -2 for GOx/ZnO. The limit of detection (LoD) was 167μM of glucose for GOx/AZO, as compared to 360μM for GOx/ZnO. The linearity was 0.28-28mM for GOx/AZO whereas it was 0.6-28mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics. Copyright © 2016 Elsevier Inc. All rights reserved.

Single and couple doping ZnO nanocrystals characterized by positron techniques

Science.gov (United States)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

Single and couple doping ZnO nanocrystals characterized by positron techniques

International Nuclear Information System (INIS)

Pasang, Tenzin; Namratha, Keerthiraj; Byrappa, Kullaiah; Guagliardo, Paul; Ranganathaiah, Chikkakuntappa; Samarin, S; Williams, J F

2015-01-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag 1+ and Pd 2+ dopants occupy interstitial sites of the ZnO lattice and single Ru 3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn 4+ + Co 2+ ) shows similar CDB ratios as Ru 3+ single-doping. Also co-doping with (Ag 1+ + Pd 2+ ) or (Ag 1+ + W 6+ ) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material. (paper)

Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique

Energy Technology Data Exchange (ETDEWEB)

Panda, J.; Sasmal, I.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in, E-mail: tapnath@gmail.com [Department of Physics, Indian Institute Technology Kharagpur, West Bengal, 721302 (India)

2016-03-15

In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline nanorods are hexagonal. The diameter and length of the as grown undoped ZnO nanorods varies in the range of 80-150 nm and 1.0 - 1.4 μm, respectively. Along with the lattice parameters of the hexagonal crystal structure, the diameter and length of Mn doped ZnO nanorods are found to increase slightly as compared to the undoped ZnO nanorods. The X-ray photoelectron spectroscopy confirms the presence of Mn atoms in Mn{sup 2+} state in the single crystalline ZnO nanorods. The recorded photoluminescence spectrum contains two emissions peaks having UV exciton emissions along with a green-yellow emission. The green-yellow emissions provide the evidence of singly ionized oxygen vacancies. The magnetic field dependent magnetization measurements [M (H)] and zero field cooled (ZFC) and field cooled (FC) magnetization [M(T)] measurements have been carried out at different isothermal conditions in the temperature range of 5-300 K. The Mn doped ZnO nanorods clearly show room temperature ferromagnetic ordering near room temperature down to 5 K. The observed magnetization may be attributed to the long range ferromagnetic interaction between bound magnetic polarons led by singly charged oxygen vacancies.

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

Energy Technology Data Exchange (ETDEWEB)

Jung, Hanearl [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Doyoung [School of Electrical and Electronic Engineering, Ulsan College, 57 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

2014-04-01

Highlights: • Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. • Effects of Ga doping using TMGa in Ga doped ZnO were investigated. • Degraded properties from excessive doping were analyzed using chemical bondings. - Abstract: The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O{sub 2} gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O{sub 2} ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O{sub 2} from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10{sup −3} Ω cm for undoped ZnO to 2.05 × 10{sup −3} Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Properties of Mn-doped ZnO nanopowder

Energy Technology Data Exchange (ETDEWEB)

Schlenker, E.; Bakin, A.; Wehmann, H.H.; Al-Suleiman, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Schmid, H.; Mader, W. [Universitaet Bonn, Institut fuer Anorganische Chemie, Bonn (Germany); Bremers, H.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Luedke, J.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

2008-06-15

The structural and magnetic properties of Mn-doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Mn incorporation leads to an increase in the lattice constants as revealed by X-ray diffraction measurements. An inhomogeneous distribution of the Mn atoms within the nanopowder was detected by energy-dispersive X-ray and electron-energy-loss spectroscopy measurements. Magnetic features are investigated by means of SQUID magnetometry on ensembles of powder particles as well as by magnetic force microscopy to study the behavior of single grains. (orig.)

Thermal process induced change of conductivity in As-doped ZnO

Science.gov (United States)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

The effect of Cu{sup 2+} on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Koao, L.F., E-mail: koaolf@qwa.ufs.ac.za [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, B.F. [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa)

2014-04-15

In this work undoped and Cu{sup 2+}-doped ZnO nanostructures were prepared by the chemical bath deposition (CBD) method at 80 °C. The structural, optical and luminescence properties of the undoped and Cu{sup 2+}-doped ZnO nanostructures were determined by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), UV–Visible Spectroscopy (UV) and Photoluminescence spectroscopy (PL) analyses. XRD analysis showed the sample prepared were hexagonal ZnO with grain sizes in the order of 46±1 nm. The estimated grain size was found not to dependent on the concentration of the Cu{sup 2+} ions used. The SEM analysis revealed that the shapes of the particles were flower-like and the addition of Cu{sup 2+} ions influenced the morphology of the samples. In the UV–Visible study the reflectance intensity decreased with an increase in the molar concentration of Cu{sup 2+} and there was no shift in the absorption edges. The PL analyses revealed that the highest luminescence intensity was obtained for the undoped ZnO. Thus Cu incorporated into the ZnO resulted in the change in its morphological, structural, and optical and luminescence properties.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung, E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

2014-07-21

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

Science.gov (United States)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

2014-07-01

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm-1 and 584 cm-1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

2014-01-01

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm −1 and 584 cm −1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Effect of morphology on the non-ohmic conduction in ZnO nanostructures

Science.gov (United States)

Praveen, E.; Jayakumar, K.

2016-05-01

Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N.; Wehbe, Nimer; Alshareef, Husam N.

2017-01-01

, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn

Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

Energy Technology Data Exchange (ETDEWEB)

Oral, A. Yavuz [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey)]. E-mail: aoral@gyte.edu.tr; Bahsi, Z. Banu [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey); Aslan, M. Hasan [Department of Physics, Gebze Institute of Technology, Gebze 41400 (Turkey)

2007-03-15

Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 deg. C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.

The effect of Ce3+ on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath method

International Nuclear Information System (INIS)

Koao, L.F.; Dejene, F.B.; Swart, H.C.; Botha, J.R.

2013-01-01

Ce 3+ doped ZnO flower-like structures were synthesized by the chemical bath deposition method (CBD). The influence of Ce 3+ as a dopant on the crystallization, surface morphology, optical and luminescent properties of ZnO flowers-like structures were investigated. The X-ray diffraction (XRD) spectra of the ZnO:Ce 3+ nanostructures correspond to the various planes of a single hexagonal ZnO phase for the lower Ce concentration samples. The estimated grain sizes calculated using the XRD spectra were found to be in order of 42±2 nm. The grain size was found to be not dependent on the concentration of the Ce 3+ ions used up to 3 mol% of Ce. Scanning Auger electron microscopy and scanning electron micrographs indicate that the addition of Ce 3+ influence the morphology of the samples. The flower-like structures obtained for the undoped and low concentration Ce doped ZnO changed into a mixed structure with the emergence of pyramid shapes for higher concentration Ce doped samples. The solid undoped and low concentration Ce doped powder showed good optical properties with a high reflectance in the visible regions. The properties, however, diminished at higher Ce concentration. The band gap energies decreased linearly with concentration from 3.0±0.1 to 2.4±0.3 eV for ZnO:0 mol% Ce 3+ up to ZnO:10 mol% Ce 3+ . Under 248 nm excitation, the undoped and low concentration Ce doped ZnO flower-like rods exhibited a green emission, peaking at about 559 nm. The higher Ce concentration (0.3 mol% and above) was emitted at 436 and 503 nm due to the Ce transitions. The intensity of these emission spectra of the ZnO:Ce 3+ decreased with the addition of more Ce 3+ ions. -- Highlights: • Ce 3+ doped ZnO flower-like structures were synthesized by CBD. • Flower-like hexagonal ZnO:Ce 3+ nanostructures were obtained for undoped and low mol% Ce. • ZnO changed into a mixed structure with emergence of pyramid shapes for higher mol% Ce. • Good optical properties with a high reflectance

Spatial Atomic Layer Deposition of transparent conductive oxides

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Poodt, P.; Roozeboom, F.

2013-01-01

Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ•cm is measured in 180 nm thick films for

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

Science.gov (United States)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

International Nuclear Information System (INIS)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

2011-01-01

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

2011-10-15

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Hydrothermal temperature effect on crystal structures, optical properties and electrical conductivity of ZnO nanostructures

Science.gov (United States)

Dhafina, Wan Almaz; Salleh, Hasiah; Daud, Mohd Zalani; Ghazali, Mohd Sabri Mohd; Ghazali, Salmah Mohd

2017-09-01

ZnO is an wide direct band gap semiconductor and possess rich family of nanostructures which turned to be a key role in the nanotechnology field of applications. Hydrothermal method was proven to be simple, robust and low cost among the reported methods to synthesize ZnO nanostructures. In this work, the properties of ZnO nanostructures were altered by varying temperatures of hydrothermal process. The changes in term of morphological, crystal structures, optical properties and electrical conductivity were investigated. A drastic change of ZnO nanostructures morphology and decreases of 002 diffraction peak were observed as the hydrothermal temperature increased. The band gap of samples decreased as the size of ZnO nanostructure increased, whereas the electrical conductivity had no influence on the band gap value but more on the morphology of ZnO nanostructures instead.

Crystal and electronic structure study of Mn doped wurtzite ZnO nanoparticles

Directory of Open Access Journals (Sweden)

O.M. Ozkendir

2016-08-01

Full Text Available The change in the crystal and electronic structure properties of wurtzite ZnO nanoparticles was studied according to Mn doping in the powder samples. The investigations were conducted by X-ray Absorption Fine Structure Spectroscopy (XAFS technique for the samples prepared with different heating and doping processes. Electronic analysis was carried out by the collected data from the X-ray Absorption Near-Edge Structure Spectroscopy (XANES measurements. Additional crystal structure properties were studied by Extended-XAFS (EXAFS analysis. Longer heating periods for the undoped wurtzite ZnO samples were determined to own stable crystal geometries. However, for some doped samples, the distortions in the crystal were observed as a result of the low doping amounts of Mn which was treated as an impurity. Besides, the changes in oxygen locations were determined to create defects and distortions in the samples.

Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

Science.gov (United States)

Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

2006-06-01

Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

The formation of tungsten doped Al_2O_3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

International Nuclear Information System (INIS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-01-01

Highlights: • Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al_2O_3/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na_2WO_4·2H_2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al_2O_3, ZnO, metallic tungsten and WO_3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al_2O_3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al_2O_3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al_2O_3/ZnO coatings is higher thanof undoped Al_2O_3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na_2WO_4·2H_2O. Tungsten in Al_2O_3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Singh, Jaspal; Vashihth, A.; Gill, Pritampal Singh; Verma, N. K.

2015-01-01

Zn 1-x Mg x O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles

Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

Energy Technology Data Exchange (ETDEWEB)

Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

2017-02-28

Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

International Nuclear Information System (INIS)

Zhou Yan-Wen; Wu Fa-Yu; Zheng Chun-Yan

2011-01-01

We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO 2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The effect of Ce{sup 3+} on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath method

Energy Technology Data Exchange (ETDEWEB)

Koao, L.F. [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa); Botha, J.R. [Physics Department, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2013-11-15

Ce{sup 3+} doped ZnO flower-like structures were synthesized by the chemical bath deposition method (CBD). The influence of Ce{sup 3+} as a dopant on the crystallization, surface morphology, optical and luminescent properties of ZnO flowers-like structures were investigated. The X-ray diffraction (XRD) spectra of the ZnO:Ce{sup 3+}nanostructures correspond to the various planes of a single hexagonal ZnO phase for the lower Ce concentration samples. The estimated grain sizes calculated using the XRD spectra were found to be in order of 42±2 nm. The grain size was found to be not dependent on the concentration of the Ce{sup 3+} ions used up to 3 mol% of Ce. Scanning Auger electron microscopy and scanning electron micrographs indicate that the addition of Ce{sup 3+} influence the morphology of the samples. The flower-like structures obtained for the undoped and low concentration Ce doped ZnO changed into a mixed structure with the emergence of pyramid shapes for higher concentration Ce doped samples. The solid undoped and low concentration Ce doped powder showed good optical properties with a high reflectance in the visible regions. The properties, however, diminished at higher Ce concentration. The band gap energies decreased linearly with concentration from 3.0±0.1 to 2.4±0.3 eV for ZnO:0 mol% Ce{sup 3+} up to ZnO:10 mol% Ce{sup 3+}. Under 248 nm excitation, the undoped and low concentration Ce doped ZnO flower-like rods exhibited a green emission, peaking at about 559 nm. The higher Ce concentration (0.3 mol% and above) was emitted at 436 and 503 nm due to the Ce transitions. The intensity of these emission spectra of the ZnO:Ce{sup 3+} decreased with the addition of more Ce{sup 3+} ions. -- Highlights: • Ce{sup 3+} doped ZnO flower-like structures were synthesized by CBD. • Flower-like hexagonal ZnO:Ce{sup 3+}nanostructures were obtained for undoped and low mol% Ce. • ZnO changed into a mixed structure with emergence of pyramid shapes for higher mol% Ce

Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications

Energy Technology Data Exchange (ETDEWEB)

Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Arslan, Andaç [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Ilican, Saliha [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Hür, Evrim [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Aksoy, Seval; Caglar, Mujdat [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey)

2013-10-15

Highlights: •Undoped and Co-doped ZnO films were deposited on p-Si by electrodeposition method. •The effects of Co doping on some properties of ZnO films were investigated. •ZnO morphology was converted uniform multi-oriented rods with incorporation of Co. •Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. -- Abstract: Well-aligned undoped and Co-doped nanorod ZnO films were grown by electrochemical deposition onto p-Si substrates from an aqueous route. Aqueous solution of Zn(NO{sub 3}){sub 2}⋅6H{sub 2}O and hexamethylenetetramine (HMT) were prepared using triple distilled water. Two different atomic ratios of Co(NO{sub 3}){sub 2}⋅6H{sub 2}O were used as a dopant element. Electrodepositions were carried out in a conventional three electrode cell for the working electrode (p-Si), reference electrode (Ag/AgCl, sat.) and counter electrode (platin wire). The effects of Co doping on the structural, morphological and electrical properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the undoped ZnO nanorod film was crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. Only one peak, corresponding to the (0 0 2) phase, appeared on the diffractograms. The lattice parameters and texture coefficient values were calculated. The nanorods were confirmed by the field emission scanning electron microscopy (FE-SEM) measurements. The FE-SEM image showed that the ZnO nanorods grow uniformly on the substrates, providing a surface with fairly homogeneous roughness. The surface morphology was transformed into uniform multi-oriented rods with incorporation of Co. Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. The diffuse reflectance spectra of the films were measured and the optical band gap values were determined using Kubelka–Munk theory. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance

Characterization of Mn doped ZnO nanopowder

Energy Technology Data Exchange (ETDEWEB)

Schlenker, Eva; Bakin, Andrey; Al-Suleiman, Mohamed; Wehmann, Hergo-Heinrich; Waag, Andreas [Institute of Semiconductor Technology, TU Braunschweig (Germany); Schmid, Herbert; Mader, Werner [Institute for Inorganic Chemistry, University Bonn (Germany); Bremers, Heiko; Hangleiter, Andreas [Institute of Applied Physics, TU Braunschweig (Germany)

2008-07-01

In the quest of materials for spintronic applications, diluted magnetic semiconductors recently attracted much attention. The main challenge is finding a ferromagnetic material with Curie temperature T{sub c}>300 K whose magnetic properties can be controlled electrically. The interest was particularly focused on Zn(TM)O since theoretical calculations predict that ZnO containing Mn could exhibit ferromagnetism with T{sub c} above room temperature. In the present study, the structural and magnetic properties of Mn doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Doping of ZnO with Mn results in increased lattice constants as revealed by XRD. However, an inhomogeneous distribution of the Mn dopants within the nanopowder was revealed by energy-dispersive X-ray and electron energy-loss spectroscopy. Magnetic properties are investigated by means of SQUID measurements on aggregates of powder particles as well as by MFM to study the behavior of single grains. The MFM image differs significantly from the topography as imaged by AFM and suggests the existence of long-ranging magnetic signals emerging from the sample.

Exploring excitonic signal in optical conductivity of ZnO through first-order electron-hole vertex correction

Science.gov (United States)

Khoirunnisa, Humaira; Aziz Majidi, Muhammad

2018-04-01

The emergence of exitonic signal in the optical response of a wide band-gap semiconductor has been a common knowledge in physics. There have been numerous experimental studies exploring the important role of excitons on influencing both the transport and optical properties of the materials. Despite the existence of much information on excitonic effects, there has not been much literature that explores detailed theoretical explanation on how the exitonic signal appears and how it evolves with temperature. Here, we propose a theoretical study on the optical conductivity of ZnO, a well-known wide band-gap semiconductor that we choose as a case study. ZnO has been known to exhibit excitonic states in its optical spectra in the energy range of ∼3.13-3.41 eV, with a high exciton binding energy of ∼60 meV. An experimental study on ZnO in 2014 revealed such a signal in its optical conductivity spectrum. We present a theoretical investigation on the appearance of excitonic signal in optical conductivity of ZnO. We model the wurtzite ZnO within an 8-band k.p approximation. We calculate the optical conductivity by incorporating the first-order vertex correction derived from the Feynman diagrams. Our calculation up to the first-order correction spectrum qualitatively confirms the existence of excitons in wurtzite ZnO.

Microstructural and photoluminescence properties of sol–gel derived Tb3+ doped ZnO nanocrystals

CSIR Research Space (South Africa)

Kabongo, GL

2014-04-01

Full Text Available Un-doped and Tb(Sup3+) doped ZnO nanocrystals with different concentrations of Tb(Sup3+) were synthesized by a sol–gel method and their photoluminescence (PL) properties were investigated. The successful incorporation of Tb(sup3+) ions...

Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

International Nuclear Information System (INIS)

Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

2009-01-01

Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

2012-04-15

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

Al-doped ZnO nanofilms: Synthesis and characterization

Energy Technology Data Exchange (ETDEWEB)

Huczko, A.; Dabrowska, A. [Department of Chemistry, Warsaw University, Warsaw (Poland); Madhup, D.K. [Department of Physics, Kathmandu University, Dhulikhel (Nepal); College of Biomedical Engineering and Applied Sciences, Hadigaun, Kathmandu (Nepal); Subedi, D.P.; Chimouriya, S.P. [Department of Physics, Kathmandu University, Dhulikhel (Nepal)

2010-12-15

Al-doped and un-doped ZnO nanofilms on quartz substrate were obtained by ultrasonic spray pyrolysis of salt solutions (mole concentration of Al within 0-10%). The films were characterized by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Atomic force microscopy (AFM) and UV spectroscopy to study the morphology and optical properties. The optical studies showed that the increase in Al within ZnO thin layer increases its band gap energy. The obtained value of band gap energy is very close to the determined oscillation energy. However, the dispersion energy is nearly half of band gap energy value. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Micrometer-sized isolated patterns of conductive ZnO derived by micromoulding

Energy Technology Data Exchange (ETDEWEB)

Goebel, Ole F.; Elshof, Johan E. ten; Blank, Dave A.H. [Inorganic Materials Science, Institute for Nanotechnology, University of Twente, Enschede (Netherlands)

2009-07-01

We succeeded in the fabrication of large-area patterns with micrometer-sized, isolated features of a simple oxide by a technically simple patterning method. By micromoulding a polymeric precursor solution for ZnO with an elastomeric (PDMS) mould, and a subsequent heat treatment, patterned ZnO films could be obtained. The features of the various patterns, including parallel or crossed lines and arrangements of dots, were several micrometers in diameter, and so were the spaces between them. The features were nearly isolated from each other, as the micromoulding process left behind a thin residual layer of ZnO of only about 15 nm thickness. By applying a tempering step, the transparent films could be rendered conductive. The process was applied successfully also to other oxide materials such as Bi2212 or CoFe2O4.

Structural and optical properties of ZnO films grown on silicon and ...

Indian Academy of Sciences (India)

TECS

Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

KAUST Repository

Flemban, Tahani H.; Singaravelu, Venkatesh; Devi, Assa Aravindh Sasikala; Roqan, Iman S.

2015-01-01

We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study

Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

Directory of Open Access Journals (Sweden)

Minggang Xia

2014-05-01

Full Text Available The electrical and thermal conductivities are measured for individual zinc oxide (ZnO nanowires with and without gallium ion (Ga+ implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω−1m−1 to 1.46 × 104 Ω−1m−1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm−1K−1 to 1.22 Wm−1K−1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Du, Juan; Bittner, Florian [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Hecht, David S.; Ladous, Corinne [Unidym, 1244 Reamwood Avenue, Sunnyvale, CA (United States); Ellinger, Jan [Tesa SE, Quickbornstr. 24, 20253 Hamburg (Germany); Oekermann, Torsten, E-mail: torstensan@t-online.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Wark, Michael, E-mail: michael.wark@techem.ruhr-uni-bochum.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Laboratory of Industrial Chemistry, Ruhr University Bochum, Universitaetsstr. 150, 44801 Bochum (Germany)

2013-03-01

A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy.

A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

International Nuclear Information System (INIS)

Du, Juan; Bittner, Florian; Hecht, David S.; Ladous, Corinne; Ellinger, Jan; Oekermann, Torsten; Wark, Michael

2013-01-01

A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy

Synthesis, characterization and gas sensing properties of undoped and Zn-doped γ-Fe2O3-based gas sensors

International Nuclear Information System (INIS)

Jing Zhihong

2006-01-01

In this study, undoped and Zn-doped γ-Fe 2 O 3 nanopowders have been prepared using Fe(NO 3 ) 3 .9H 2 O and Zn(NO 3 ) 2 .6H 2 O as starting materials and lauryl alcohol as anhydrous medium. Thermo-gravimetric analysis (TGA), differential thermal analysis (DTA), X-ray diffraction (XRD) and transmission electron micrograph (TEM) were employed to characterize the products. Sensitivity characteristics of the undoped and Zn-doped γ-Fe 2 O 3 semiconductor gas sensors have been investigated. The results show that both of the undoped and 15 mol% Zn-doped γ-Fe 2 O 3 -based gas sensors present good sensitivity and selectivity to acetone and ethanol in presence of CH 4 , H 2 and CO at the operating temperatures of 240 and 270 deg. C, respectively. After being doped with 15 mol% Zn addition, the γ-Fe 2 O 3 -based gas element displays higher sensitivity and selectivity as well as shorter response-recovery time compared with the undoped, suggesting that the promoting effect of ZnO is excellent. So, it seems that the γ-Fe 2 O 3 -based gas sensor doped with 15 mol% Zn is expected to be a promising sensor for detecting acetone and ethanol

Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

Energy Technology Data Exchange (ETDEWEB)

Yayapao, Oranuch [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Phuruangrat, Anukorn, E-mail: phuruangrat@hotmail.com [Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); Thongtem, Somchai [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2013-11-05

Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C{sub 16}H{sub 18}N{sub 3}SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity.

Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

International Nuclear Information System (INIS)

Yayapao, Oranuch; Thongtem, Titipun; Phuruangrat, Anukorn; Thongtem, Somchai

2013-01-01

Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C 16 H 18 N 3 SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity

Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

International Nuclear Information System (INIS)

Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

2010-01-01

We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

The formation of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia)

2016-07-30

Highlights: • Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al{sub 2}O{sub 3}/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na{sub 2}WO{sub 4}·2H{sub 2}O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al{sub 2}O{sub 3}, ZnO, metallic tungsten and WO{sub 3}. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al{sub 2}O{sub 3}/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is higher thanof undoped Al{sub 2}O{sub 3}/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na{sub 2}WO{sub 4}·2H{sub 2}O. Tungsten in Al{sub 2}O{sub 3}/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the

The influence of ZnO incorporation on the aqueous leaching characteristics of a borosilicate glass

Science.gov (United States)

Vance, E. R.; Gregg, D. J.; Karatchevtseva, I.; Griffiths, G. J.; Olufson, K.; Rees, Gregory J.; Hanna, John V.

2017-10-01

With increasing ZnO content, short term aqueous durability enhancement of all elements in borosilicate glasses containing 1.0 and 3.85 wt% ZnO was evident in 7-day PCT-B tests. In 14-day MCC-1 type leach tests conducted at 90 °C, surface alteration was very clear in the undoped glass via the formation of strongly altered amorphous material which tended to spall off the surface. No sign of crystallinity was detected by grazing incidence X-ray diffraction or electron microscopy of the surface layers and the surface material was very rich in silica. For the ZnO-bearing glasses, significant growth of particles following PCT leaching for 7 days was observed, due to a build-up of surface ZnO-containing Si-rich material and possible agglomeration. This alteration layer was also observed in MCC-1 type experiments in which cross-section SEM-EDS data were obtained. Raman, infrared and 11B and 29Si MAS NMR spectroscopy showed only slight changes in boron speciation on the addition of up to 9.1 wt% ZnO. Bulk positron annihilation lifetime spectra (PALS) of glasses containing 0-3.85 wt% ZnO could be analysed with three distinct lifetimes and also showed only slight differences. These results indicate that the basic glass structure was essentially not influenced by the ZnO content and that the passivation of the alteration layer is promoted by ZnO content.

Zinc Vacancy Formation and its Effect on the Conductivity of ZnO

Science.gov (United States)

Khan, Enamul; Weber, Marc; Langford, Steve; Dickinson, Tom

2010-03-01

Exposing single crystal ZnO to 193-nm ArF excimer laser radiation can produce metallic zinc nanoparticles along the surface. The particle production mechanism appears to involve interstitial-vacancy pair formation in the near-surface bulk. Conductivity measurements made with one probe inside the laser spot and the other outside show evidence for rectifying behavior. Positron annihilation spectroscopy confirms the presence of Zn vacancies. We suggest that Zn vacancies are a possible source of p-type behavior in irradiated ZnO. Quadrupole mass spectroscopy shows that both oxygen and zinc are emitted during irradiation. Electron-hole pair production has previously been invoked to account for particle desorption from ZnO during UV illumination. Our results suggest that preexisting and laser-generated defects play a critical role in particle desorption and Zn vacancy formation.

A study of tensile and thermal properties of 3D printed conductive ABS - ZnO composite

Science.gov (United States)

Aw, Y. Y.; Yeoh, C. K.; Idris, M. A.; Amali, H. K.; Aqzna, S. S.; Teh, P. L.

2017-04-01

Research into 3D printed composites are interesting because the properties of 3D printed components are usually insufficient for robust engineering applications. In this paper, conductive ABS - ZnO composites were successfully fabricated using a 3D printer. Tensile strength increases when filler loading increases up to 11wt%. Dynamic storage modulus of the conductive ABS-ZnO composite increases with the addition of ZnO filler, indicating stiffness enhancement of the composites. Higher loss modulus is also observed on samples with ZnO filler. Thermal conductivity increases from 0.2204 W/mK to 0.3508 W/mK when the filler concentration increases to 14wt% due to the formation of conductive network among fillers within the polymer matrix. With these promising tensile and thermal properties, the 3D printed composites are suitable to be used as automobile parts.

Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

Energy Technology Data Exchange (ETDEWEB)

Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei, E-mail: ymgong@dlpu.edu.cn; Guo, Jing, E-mail: guojing8161@163.com

2016-12-01

Highlights: • Polymeric PET fibers were conductive modified by ITO and the subsequent Ag coating. The conductive PET-ITO-Ag fiber has the surface resistivity as low as 0.23 mΩ cm. The PET-ITO-Ag fiber was used as a basal material to plant vertical ZnO nanorods. - Abstract: We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol–gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl{sub 2}, a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

International Nuclear Information System (INIS)

Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei; Guo, Jing

2016-01-01

Highlights: • Polymeric PET fibers were conductive modified by ITO and the subsequent Ag coating. The conductive PET-ITO-Ag fiber has the surface resistivity as low as 0.23 mΩ cm. The PET-ITO-Ag fiber was used as a basal material to plant vertical ZnO nanorods. - Abstract: We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol–gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl 2 , a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

Physical meaning of conductivity spectra for ZnO ceramics

Institute of Scientific and Technical Information of China (English)

Cheng Peng-Fei; Li Sheng-Tao; Li Jian-Ying; Ding Can; Yang Yan

2012-01-01

With the help of broadband dielectric spectroscopy in a wide temperature and frequency range,the conductivity spectra of ZnO polycrystalline ceramics are measured and the direct-current-like (DC-like) conductivity and relaxation polarization conductivity are observed successively along the frequency axis.According to the classical Debye theory and Cole-Cole equation,the physical meanings of the two conductivities are discussed.It is found that the DC-like conductivity corresponds to electron transportation over the Schottky barrier at the grainboundary.The relaxation polarization conductivity corresponds to electronic trap relaxation of intrinsic point defects (zinc interstitial and oxygen vacancy).When in the high frequency region,the relaxation conductivity obeys the universal law with the index n equal to the index α in the Cole-Cole equation as an indictor of disorder degree.

A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

Science.gov (United States)

Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

2018-03-01

The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn

N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

International Nuclear Information System (INIS)

Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

2004-01-01

Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

Oxygen vacancies effect on ionic conductivity and relaxation phenomenon in undoped and Mn doped PZN-4.5PT single crystals

International Nuclear Information System (INIS)

Kobor, Diouma; Guiffard, Benoit; Lebrun, Laurent; Hajjaji, Abdelowahed; Guyomar, Daniel

2007-01-01

AC-impedance spectroscopic studies in the temperature range 550-700 deg. C are carried out on undoped and Mn doped PZN-PT single crystals grown by the flux method. The variation of dielectric permittivity with temperature at different frequencies shows normal ferroelectric and relaxor-like dependence for the doped and undoped crystals, respectively. Temperature-dependent spectroscopic modulus plots reveal a much broader peak for PZN-4.5PT + 1%Mn compared with that for PZN-4.5PT, which is different from the dielectric behaviour of the doped one. Complex modulus imaginary part (Z-prime) versus real part (Z') plots fit well with one semicircle thus indicating only bulk contribution. The relaxation observed in the spectroscopic plots was assigned to mobile relaxor species such as oxygen vacancies and ions. No such relaxation could be observed for PZN-4.5PT + 1%Mn in the dielectric measurements. For both undoped and Mn doped crystals, the conduction behaviour was modelled by the universal dynamic response equation and by the NTC (negative temperature coefficient) materials resistance-temperature behaviour. A large difference in behaviour was found between the two single crystals such as the thermistor coefficients and the activation energy values, which could explain the increase in the thermal stability observed in the Mn doped PZN-PT single crystals by many studies

On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

Energy Technology Data Exchange (ETDEWEB)

Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

2014-08-25

Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

Electrical conduction and NO{sub 2} gas sensing properties of ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Şahin, Yasin [Council of Forensic Medicine, Bahçelievler, 34196 Istanbul (Turkey); Öztürk, Sadullah, E-mail: sadullahozturk@gyte.edu.tr [Gebze Institute of Technology, Science Faculty, Department of Physics, 41400 Gebze, Kocaeli (Turkey); Kılınç, Necmettin [Gebze Institute of Technology, Science Faculty, Department of Physics, 41400 Gebze, Kocaeli (Turkey); Koc University, Department of Electrical and Electronics Engineering, Sariyer, 34450 Istanbul (Turkey); Kösemen, Arif [Gebze Institute of Technology, Science Faculty, Department of Physics, 41400 Gebze, Kocaeli (Turkey); Mus Alparslan University, Department of Physics, 49100 Mus (Turkey); Erkovan, Mustafa [SAKARYA University, Engineering Faculty, Department of Metallurgical and Materials Engineering, Esentepe Campus, 54187 Sakarya (Turkey); Öztürk, Zafer Ziya [Gebze Institute of Technology, Science Faculty, Department of Physics, 41400 Gebze, Kocaeli (Turkey); TÜBİTAK-Marmara Research Center, Materials Institute, 41470 Gebze, Kocaeli (Turkey)

2014-06-01

Thermally stimulated current (TSC), photoresponse and gas sensing properties of zinc oxide (ZnO) nanorods were investigated depending on heating rates, illumination and dark aging times with using sandwich type electrode system. Vertically aligned ZnO nanorods were grown on indium tin oxide (ITO) coated glass substrate by hydrothermal process. TSC measurements were performed at different heating rates under constant potential. Photoresponse and gas sensing properties were investigated in dry air ambient at 200 °C. For gas sensing measurements, ZnO nanorods were exposed to NO{sub 2} (100 ppb to 1 ppm) in dark and illuminated conditions and the resulting resistance transient was recorded. It was found from dark electrical measurements that the dependence of the dc conductivity on temperature followed Mott's variable range hopping (VRH) model. In addition, response time and recovery times of ZnO nanorods to NO{sub 2} gas decreased by exposing to white light.

Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

International Nuclear Information System (INIS)

Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

2014-01-01

In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

KAUST Repository

Flemban, Tahani H.

2015-10-30

We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study shows that an in situ transparent and conductive Gd nanolayer (with a uniform thickness of ∼1 nm) at the interface between a lattice-matched (11-20) a-sapphire substrate and ZnO is formed during the deposition. This nanolayer significantly induces a relaxation mechanism that controls the dislocation distribution along the growth direction; which consequently improves the formation of homogeneous vertically aligned ZnO NRs. We demonstrate that both the lattice orientation of the substrate and the Gd characteristics are important in enhancing the NR synthesis, and we report precise control of the NR density by changing the oxygen partial pressure. We show that these NRs possess high optical and electrical quality, with a mobility of 177 cm2 (V s)-1, which is comparable to the best-reported mobility of ZnO NRs. Therefore, this new and simple method has significant potential for improving the performance of materials used in a wide range of electronic and optoelectronic applications.

Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer

Energy Technology Data Exchange (ETDEWEB)

Dou, Yuanyao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Mao, Caiying [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Guo, Shengchun [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Zhou, Miao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China)

2015-06-05

Highlights: • ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method. • Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells. • The highest η of 1.23% can be achieved in a DSSC with 3 at.% Ga-doped in seeds. • The effects of ZnO seed layers on electron transport properties were investigated. • The enhancement performance of DSSCs contributed to higher dye loading and η{sub cc}. - Abstract: Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4 at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3 at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.

Structural and room temperature ferromagnetic properties of Ni doped ZnO nanoparticles via low-temperature hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Xu, Kun; Liu, Changzhen, E-mail: liuchangzhen94@163.com; Chen, Rui; Fang, Xiaoxiang; Wu, Xiuling; Liu, Jie

2016-12-01

A series of Zn{sub 1−x}Ni{sub x}O (x=0, 1%, 3%, 5%) nanoparticles have been synthesized via a low-temperature hydrothermal method. Influence of Ni doping concentration on the structure, morphology, optical properties and magnetism of the samples was investigated by means of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis spectrophotometer and vibrating sample magnetometer instruments. The results show that the undoped and doped ZnO nanoparticles are both hexagonal wurtzite structures. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The images of SEM reveal that the structure of pure ZnO and Ni doped samples are nanoparticles which intended to form flakes with thickness of few nanometers, being overlain with each one to develop the network with some pores and voids. Based on the ultraviolet–visible (UV–vis) spectroscopy analysis, it indicates that the band gap energy decreases with the increasing concentration of Ni. Furthermore, The Ni doped ZnO samples didn't exhibit higher ultraviolet-light-driven photocatalytic activity compared to the undoped ZnO sample. Vibrating sample magnetometer was used for the magnetic property investigations, and the result indicates that room temperature ferromagnetism property of 3% Ni doped sample is attributed to oxygen vacancy and interaction between doped ions.

N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

2004-01-21

Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

Superhydrophobic and anti-reflective ZnO nanorod-coated FTO transparent conductive thin films prepared by a three-step method

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); Huang, Li-jing; Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang, 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing, 225400 (China)

2016-07-25

A ZnO nanorod-coated FTO film was prepared by sputtering an AZO layer on FTO glass, thermal annealing of the AZO/FTO film, and hydrothermal growth of ZnO nanorods at 70 °C on the annealed AZO/FTO film using zinc foils as zinc source. Two other ZnO nanorod-coated FTO films were also prepared by hydrothermal growths of ZnO nanorods on the FTO glass and the unannealed AZO/FTO film respectively for comparison purpose. The results were observed in detail using X-ray diffraction, scanning electron microscopy, water contact/sliding angle measurement, spectrophotometry and four-point probe measurement. The ZnO nanorods on the annealed AZO/FTO film were found to exhibit denser distribution and better orientation than those on the FTO glass and the unannealed AZO/FTO film. As a result, the ZnO nanorod-coated annealed AZO/FTO film demonstrated superhydrophobicity, high transparency and low reflectance in the visible range. Also this film had the lowest sheet resistance of 4.0 Ω/sq, implying its good electrical conductivity. This investigation provides a valuable reference for developing multifunctional transparent conductive films. - Highlights: • ZnO nanorod-coated annealed AZO/FTO film was obtained by a three-step method. • FTO and unannealed AZO/FTO films were also used as substrates for comparison. • ZnO nanorods on the annealed AZO/FTO film were denser and more vertically-oriented. • The ZnO nanorod-coated annealed AZO/FTO film (Z/TA-FTO) had superhydrophobicity. • The Z/TA-FTO exhibited high transparency, low reflectance and good conductivity.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Harish Kumar [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Katiyar, R S [Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343 (Puerto Rico); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2007-10-07

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm{sup -1}. The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A{sub 1} (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K; Katiyar, R S; Gupta, Vinay

2007-01-01

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm -1 . The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A 1 (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries

Structural, Morphological, and LPG Sensing Properties of Al-Doped ZnO Thin Film Prepared by SILAR

Directory of Open Access Journals (Sweden)

Shampa Mondal

2013-01-01

Full Text Available Undoped and aluminum doped zinc oxide (AZO thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR technique from ammonium zincate complex. The thin films are characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM for their structural and morphological studies. Both undoped and Al-doped film show strong preferred c-axis orientation. The texture coefficient (TC of the film along (002 direction increases due to Al incorporation. SEM micrograph shows round shaped particles for pure ZnO. However AZO films show particles with off spherical shape and compact interconnected grains. Sensitivity of the film in presence of 80% LEL (lower explosive limit of LPG increases with temperature and is maximum at 325°C. Significantly high sensitivity of 87% with reasonably fast response was observed for 1% Al-doped ZnO (AZO film in presence of 1.6 vol% LPG at 325°C.

Retracted: Study of the wettability of ZnO nanofilms

Directory of Open Access Journals (Sweden)

Ujjwal M Joshi

2012-04-01

Full Text Available Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

Hydrogen in ZnO - a challenge to experiments and theory

Energy Technology Data Exchange (ETDEWEB)

Brauer, Gerhard [Forschungszentrum Dresden-Rossendorf e.V., Dresden (Germany); Kuriplach, Jan [Charles University, Prague (Czech Republic)

2008-07-01

Positron lifetime spectroscopy, nuclear reaction analysis and X-ray diffraction have been combined to investigate various, nominally undoped, ZnO single crystals. Hydrogen is detected in all crystals in a bound state (0.3-0.8 at.-%), and in some cases also in an unbound state (0.7-1.9 at.-%), which can be removed by annealing. A single positron lifetime of 180-182 ps and 165-167 ps is measured for all hydrothermally and melt grown crystals, respectively. These lifetimes are attributed to zinc vacancy-hydrogen complexes, as deduced from ab initio studies of various vacancy-hydrogen defect configurations in ZnO and related positron calculations. In addition, various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. It is demonstrated that a very high amount of hydrogen (up to {proportional_to}30 at.-%) can be introduced into the crystals by electrochemical doping. It is found that more than half of this amount is chemically bound, i.e. incorporated into the ZnO crystal lattice.

Acceptors related to group I elements in ZnO ceramics

Energy Technology Data Exchange (ETDEWEB)

Kushnirenko, V.I. [V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauky 45, Kiev 03028 (Ukraine); Markevich, I.V., E-mail: ivmarkevich@ukr.net [V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauky 45, Kiev 03028 (Ukraine); Zashivailo, T.V. [National Technical University of Ukraine ' KPI' , Pr. Pobedy 37, Kiev 03056 (Ukraine)

2012-08-15

ZnO ceramics doped with Li, Na or K were sintered in air for 4 h at 1000 Degree-Sign C. Electrical conductivity as well as photoluminescence (PL), PL excitation and photoconductivity spectra were measured and compared with those in undoped samples. The influence of both fast and slow cooling of the samples from 1000 Degree-Sign C on measured characteristics was investigated. The yellow-orange PL bands associated with the deep acceptors Li{sub Zn}, Na{sub Zn} and K{sub Zn} were observed and the corresponding PL excitation spectra were determined. These acceptors were found to form some complexes with other lattice defects. - Highlights: Black-Right-Pointing-Pointer Centers related to Li, Na and K impurities in zinc oxide were investigated. Black-Right-Pointing-Pointer It was shown that Li{sub Zn}, Na{sub Zn} and K{sub Zn} centers were deep acceptors responsible for yellow-orange PL bands. Black-Right-Pointing-Pointer These acceptors were found to form some complexes with other lattice defects. Black-Right-Pointing-Pointer The formation of shallow acceptors due to doping ZnO ceramics with Li, Na and K was not found.

Improving the selective cancer killing ability of ZnO nanoparticles using Fe doping.

Science.gov (United States)

Thurber, Aaron; Wingett, Denise G; Rasmussen, John W; Layne, Janet; Johnson, Lydia; Tenne, Dmitri A; Zhang, Jianhui; Hanna, Charles B; Punnoose, Alex

2012-06-01

This work reports a new method to improve our recent demonstration of zinc oxide (ZnO) nanoparticles (NPs) selectively killing certain human cancer cells, achieved by incorporating Fe ions into the NPs. Thoroughly characterized cationic ZnO NPs (∼6 nm) doped with Fe ions (Zn(1-x )Fe (x) O, x = 0-0.15) were used in this work, applied at a concentration of 24 μg/ml. Cytotoxicity studies using flow cytometry on Jurkat leukemic cancer cells show cell viability drops from about 43% for undoped ZnO NPs to 15% for ZnO NPs doped with 7.5% Fe. However, the trend reverses and cell viability increases with higher Fe concentrations. The non-immortalized human T cells are markedly more resistant to Fe-doped ZnO NPs than cancerous T cells, confirming that Fe-doped samples still maintain selective toxicity to cancer cells. Pure iron oxide samples displayed no appreciable toxicity. Reactive oxygen species generated with NP introduction to cells increased with increasing Fe up to 7.5% and decreased for >7.5% doping.

High rate (∼7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se2 thin-film solar cells with efficiency beyond 15%

NARCIS (Netherlands)

Illiberi, A.; Grob, F.; Frijters, C.; Poodt, P.; Ramachandra, R.; Winands, H.; Simor, M.; Bolt, P.J.

2013-01-01

Undoped zinc oxide (ZnO) films have been grown on a moving glass substrate by plasma-enhanced chemical vapor deposition at atmospheric pressure. High deposition rates of ∼7 nm/s are achieved at low temperature (200°C) for a substrate speed from 20 to 60 mm/min. ZnO films are highly transparent in

Luminescence and spectroscopic investigations on Gd3+ doped ZnO nanophosphor

Directory of Open Access Journals (Sweden)

G. Krishna Reddy

2017-09-01

Full Text Available The present paper describes the synthesis of 0.1 mol% Gadolinium (Gd doped Zinc oxide (ZnO nanophosphor by solution combustion method using Oxalyl dihydrazide (ODH fuel. Powder X-ray diffraction (PXRD peaks are well matched with the standard hexagonal wurtzite structure of ZnO (JCPDS card no. 36-1451. SEM and TEM analysis reveals porous morphology of as -formed sample with particles having narrow size distribution in the range ∼60–70 nm, in good agreement with XRD data. The PL spectrum of Gd doped ZnO sample exhibits an extra blue emission at 441 nm (∼2.81 eV in addition to the emission bands from undoped ZnO. From the TL data of ZnO:Gd nanophosphor with UV irradiation, it is observed that considerable amount of re-trapping is taking place in all the TL second order peaks. The EPR spectrum exhibits a number of resonance signals suggesting that Gd3+ ions are experiencing different crystal field strength and Zeeman interactions.

Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Science.gov (United States)

Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

2013-05-01

We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

International Nuclear Information System (INIS)

Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

2015-01-01

The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE C ) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE C of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination

Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

International Nuclear Information System (INIS)

Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

2009-01-01

Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

Enhanced optical and electrical properties of Y-doped ZnO nanoparticles having different Y concentrations

Science.gov (United States)

Üzar, Neslihan

2018-04-01

In this study, undoped ZnO and yttrium (Y)-doped ZnO (YZO) nanoparticles having different Y dopant concentrations (Zn1- x Y x O; x = 0.005, 0.01, 0.015, 0.02) were successfully synthesized by sol-gel dip-coating method. Structural characterizations of the obtained samples were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses. SEM analysis shows that the synthesized nanoparticles are mostly dot-like structures. The sizes of nanostructures decrease with increasing Y-doping concentration up to 2 mol % Y and XRD results show that all of samples have wurtzite hexagonal structure of ZnO with (002) c-plane orientation. According to EDS results pure YZO samples are obtained. Optical transmittances of all samples were investigated in the range of 350-750 nm at room temperature. The average optical transmittances of YZO samples in the visible region are approximately over 90%, but the transmittance starts to decrease for Zn0.98Y0.02O sample. Also, it was observed that the optical transmittances of Y-doped samples are higher than that of undoped ZnO. The electrical properties of YZO samples were obtained by resistance measurements at room temperature. The resistivity of samples was found to be 2.25 × 10-3, 1.43 × 10-3, 7.8 × 10-3, and 1.3 × 10-3 Ω-cm for Zn0.995Y0.005O, Zn0.99Y0.01O, Zn0.985Y0.015O and Zn0.98Y0.02O, respectively. All these results show that surface, structural, electrical and optical properties of ZnO samples can be improved with doping Y up to 2 mol % concentrations.

Identification of conduction and hot electron property in ZnS, ZnO and SiO2

International Nuclear Information System (INIS)

Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong

2007-01-01

The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS

Co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO

International Nuclear Information System (INIS)

Feng, Wu-Wei; Cho, Sunglae; Wang, Ming-Song; Dung, Dang Duc

2016-01-01

Highlights: • Native defects cannot explain large increase of resistance of the sample after 200 °C-annealing. • Native defects cannot explain changes of carrier concentration being in range of few orders lower than for stoichiometry. • Above two important phenomena can be explained by H-related defects. • n-type conductivity in ZnO cannot be solely ascribed to H-defects or native defects, both could be contributor. • The contribution of CH_x to the majority of n-type conductivity was ruled out. - Abstract: We reinvestigated the origin of n-type conductivity in the unintentionally-doped ZnO. 1000 °C-annealed sample was free of H- and C-related impurities and still demonstrated strong conductivity revealing the significant contribution of native defects to the n-type conductivity of ZnO. However, it is hydrogen impurities, rather than native defects, that can only explain the increase of sample resistivity after annealing in Ar at 200 °C and the small difference in the variation of carrier density upon considerable changes of the stoichiometry of sample. In this regard, we proposed that co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO in general, and the hydrogen impurities probably are the preferential origin responsible for the strong conductivity in ZnO if they exist substantially in the sample.

Co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO

Energy Technology Data Exchange (ETDEWEB)

Feng, Wu-Wei, E-mail: wfeng@cugb.edu.cn [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Wang, Ming-Song [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

2016-01-28

Highlights: • Native defects cannot explain large increase of resistance of the sample after 200 °C-annealing. • Native defects cannot explain changes of carrier concentration being in range of few orders lower than for stoichiometry. • Above two important phenomena can be explained by H-related defects. • n-type conductivity in ZnO cannot be solely ascribed to H-defects or native defects, both could be contributor. • The contribution of CH{sub x} to the majority of n-type conductivity was ruled out. - Abstract: We reinvestigated the origin of n-type conductivity in the unintentionally-doped ZnO. 1000 °C-annealed sample was free of H- and C-related impurities and still demonstrated strong conductivity revealing the significant contribution of native defects to the n-type conductivity of ZnO. However, it is hydrogen impurities, rather than native defects, that can only explain the increase of sample resistivity after annealing in Ar at 200 °C and the small difference in the variation of carrier density upon considerable changes of the stoichiometry of sample. In this regard, we proposed that co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO in general, and the hydrogen impurities probably are the preferential origin responsible for the strong conductivity in ZnO if they exist substantially in the sample.

Zn-vacancy related defects in ZnO grown by pulsed laser deposition

Science.gov (United States)

Ling, F. C. C.; Luo, C. Q.; Wang, Z. L.; Anwand, W.; Wagner, A.

2017-02-01

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

Synergistic effects of Mo and F doping on the quality factor of ZnO thin films prepared by a fully automated home-made nebulizer spray technique

Science.gov (United States)

Ravichandran, K.; Dineshbabu, N.; Arun, T.; Manivasaham, A.; Sindhuja, E.

2017-01-01

Transparent conducting oxide films of undoped, Mo doped, Mo + F co-doped ZnO were deposited using a facile homemade nebulizer spray pyrolysis technique. The effects of Mo and F doping on the structural, optical, electrical and surface morphological properties were investigated using XRD, UV-vis-NIR spectroscopy, I-V and Hall probe techniques, FESEM and AFM, and XPS, respectively. The XRD analysis confirms that all the films are well crystallized with hexagonal wurtzite structure. All the synthesized samples exhibit high transmittance (above 85%) in the visible region. The current-voltage (I-V) characteristics show the ohmic conduction nature of the films. The Hall probe measurements show that the synergistic effects of Mo and F doping cause desirable improvements in the quality factor of the ZnO films. A minimum resistivity of 5.12 × 10-3 Ω cm with remarkably higher values of mobility and carrier concentration is achieved for Mo (2 at.%) + F (15 at.%) co-doped ZnO films. A considerable variation in the intensity of deep level emission caused by Mo and F doping is observed in the photoluminescence (PL) studies. The presence of the constituent elements in the samples is confirmed by XPS analysis.

Mott-Schottky analysis of thin ZnO films

International Nuclear Information System (INIS)

Windisch, Charles F. Jr.; Exarhos, Gregory J.

2000-01-01

Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

Investigations on photoelectrochemical performance of boron doped ZnO nanorods synthesized by facile hydrothermal technique

Science.gov (United States)

Sharma, Akash; Chakraborty, Mohua; Thangavel, R.

2018-05-01

Undoped and 10% Boron (B)-doped Zinc Oxide nanorods (ZnO NRs) on Tin doped Indium Oxide (ITO) coated glass substrates were synthesized using facile sol-gel, spin coating and hydrothermal method. The impact of adding Boron on the structural, optical properties, surface morphology and photoelectrochemical (PEC) performances of the ZnO NRs have been investigated. The XRD pattern confirmed the formation of pure hexagonal phase with space group P63mc (186). The same can also be clearly observed form the FESEM images. The UV-Vis study shows the narrowing in band gap from 3.22 eV to 3.19 eV with incorporation of Boron in ZnO matrix. The B-doped ZnO NRs sample shows an enhanced photocurrent density of 1.31 mA/cm2 at 0.5 V (vs. Ag/AgCl), which is more than 171% enhancement compared to bare ZnO NRs (0.483 mA/cm2) in 0.1 M Na2SO4 aqueous solution. The results clearly indicates that the boron doped ZnO NRs can be used as an efficient photoelectrode material for photoelectrochemical cell.

Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

Science.gov (United States)

Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei; Guo, Jing

2016-12-01

We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol-gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl2, a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

Science.gov (United States)

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

International Nuclear Information System (INIS)

Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J

2009-01-01

Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi 2 O 3 or ZnS and Bi 2 O 3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

Energy Technology Data Exchange (ETDEWEB)

Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J, E-mail: balemanl@fis.ucm.e [Departamento de Fisica de Materiales, Facultad de Ciencias FIsicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)

2009-11-21

Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi{sub 2}O{sub 3} or ZnS and Bi{sub 2}O{sub 3} powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

Indian Academy of Sciences (India)

Administrator

Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure. PING YANG*, LIQIANG ZHANG, HAIYING YANG†, DONGJING LIU and XIALONG LI. Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS,. School of Mechanical Engineering, Jiangsu University, ...

Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Moura, Ana P. de [LIEC, Instituto de Química, Universidade Estadual Paulista, 14800-900 Araraquara, SP (Brazil); Freire, Poliana G. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Silva, Luis F. da; Longo, Elson [LIEC, Instituto de Química, Universidade Estadual Paulista, 14800-900 Araraquara, SP (Brazil); Munoz, Rodrigo A.A. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Lima, Renata C., E-mail: rclima@iqufu.ufu.br [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil)

2015-10-15

We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

Optical and structural properties of individual Co-doped ZnO microwires

Science.gov (United States)

Kolomys, O. F.; Strelchuk, V. V.; Rarata, S. V.; Hayn, R.; Savoyant, A.; Giovannelli, F.; Delorme, F.; Tkach, V.

2018-06-01

The Co-doped ZnO microwires (MWs) were grown using the optical furnace method. We used Scanning electron microscopy (SEM), polarized micro-Raman spectroscopy, photoluminescence (PL) and optical absorption spectroscopy to systematic investigation of the optical and structural properties of Co-doped ZnO MWs. The SEM analysis reveals that Co-doped ZnO MWs has hexagonal facets and cavity inside. The EDS results confirmed the presence and non-uniform distribution of Co impurities in the samples. Co doping of ZnO MWs leads to the decreased intensity, drastically broadening and high-energy shift of the NBE PL band. The red emission band at 1.85 eV originates from 2E(2G) → 4A2 (4F) intra-3d-transition of Co2+ in the ZnO lattice has been observed. The intense structured absorption bands within the near infrared ranges 3800-4800 and 5500-9000 cm-1 are caused by electronic spin-allowed transitions 4T2(F) ← 4A2(F) and 4T1(F) ← 4A2(F) of the tetrahedrally coordinated Co2+ (3 d7) ions substituting Zn2+ ions in Co-doped ZnO MWs. Micro-Raman studies of Co doped ZnO MWs show doping/disorder induced additional modes as compared to the undoped sample. The resonant enhancement of the additional local Co-related A1-symmetry Raman mode is observed in the parallel polarization geometry y(z , z) ybar . For the Co doped ZnO MWs, the enhancement of the additional Co-related local vibration mode with an increase in the excitation photon energy is also observed in the Raman spectra.

High efficiency of transmittance and electrical conductivity of V doped ZnO used in solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Boujnah, M., E-mail: boujnah.mourad@gmail.com [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco); Boumdyan, M. [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco); Naji, S. [Department of Physics, Faculty of Sciences, Ibb University, Ibb (Yemen); Benyoussef, A.; El Kenz, A.; Loulidi, M. [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco)

2016-06-25

The full-potential linearized augmented plane wave method (FP-LAPW) based on the density functional theory (DFT) and Boltzmann's Transport theory, are employed to investigate theoretically the electronic structure, optical and electrical properties of vanadium -doped wurtzite ZnO with different concentrations (3.125%, 6.25%, 12.5%, 25%). The FP-LAPW based on the new potential approximation known as the Tran-Blaha modified Becke–Johnson exchange potential approximation (mBJ) was also applied with the primary goal of improving the electronic structure description specially the band gap energy. The calculated band structure and density of states (DOS) exhibit a band gap of pure ZnO (3.3 eV) closer to the experimental one. As well, our results indicate that the average transmittance in the 400–1000 nm wavelength region was 93%. We found that Zn{sub 96.875}V{sub 3.125}O is the optimized composition of the V doped ZnO, which has the highest conductivity (3.2 × 10{sup 3} (Ωcm){sup −1}) and transmittance. The high transmittance and electrical conductivity indicate that hexagonal V:ZnO system is a potential as material for solar energy applications. - Highlights: • We investigate theoretically the physical properties of V-doped wurtzite ZnO. • We used density functional calculations (DFT) and Boltzmann's Transport theory. • We examined the optical and electrical properties of different percentage of V doped ZnO.

Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy

Science.gov (United States)

Brauer, G.; Anwand, W.; Grambole, D.; Grenzer, J.; Skorupa, W.; Čížek, J.; Kuriplach, J.; Procházka, I.; Ling, C. C.; So, C. K.; Schulz, D.; Klimm, D.

2009-03-01

A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown (HTG) or melt grown (MG), has been performed. The crystal quality has been assessed by x-ray diffraction, and a comprehensive estimation of the detailed impurity and hydrogen contents by inductively coupled plasma mass spectrometry and nuclear reaction analysis, respectively, has been made also. High precision positron lifetime experiments show that a single positron lifetime is observed in all crystals investigated, which clusters at 180-182 ps and 165-167 ps for HTG and MG crystals, respectively. Furthermore, hydrogen is detected in all crystals in a bound state with a high concentration (at least 0.3at.% ), whereas the concentrations of other impurities are very small. From ab initio calculations it is suggested that the existence of Zn-vacancy-hydrogen complexes is the most natural explanation for the given experimental facts at present. Furthermore, the distribution of H at a metal/ZnO interface of a MG crystal, and the H content of a HTG crystal upon annealing and time afterward has been monitored, as this is most probably related to the properties of electrical contacts made at ZnO and the instability in p -type conductivity observed at ZnO nanorods in literature. All experimental findings and presented theoretical considerations support the conclusion that various types of Zn-vacancy-hydrogen complexes exist in ZnO and need to be taken into account in future studies, especially for HTG materials.

Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

Directory of Open Access Journals (Sweden)

Shibu Saha

2011-12-01

Full Text Available Highly c-axis oriented Al and Fe co-doped ZnO (ZAF thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase, was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis

International Nuclear Information System (INIS)

Gaikwad, Rajendra S.; Bhande, Sambhaji S.; Mane, Rajaram S.; Pawar, Bhagwat N.; Gaikwad, Sanjay L.; Han, Sung-Hwan; Joo, Oh-Shim

2012-01-01

Graphical abstract: Display Omitted Highlights: ► We report surface roughness dependent transparency and conductivity in ZnO films. ► The surface roughness with respected to boron doping concentrations is studied. ► Boron doped and pristine Zinc oxide thin films have showed ≥95% transmittance. ► Increased carrier concentration of 9.21 × 10 21 cm −3 revealed from Hall measurement. -- Abstract: Sprayed polycrystalline ZnO and boron-doped ZnO thin films composed of spherical grains of 25–32 nm in diameters are used in roughness measurement and further correlated with the transparency and the conductivity characteristics. The surface roughness is increased up to Zn 0.98 B 0.02 O and then declined at higher boron concentrations. The sprayed ZnO films revealed ≥95% transmittance in the visible wavelength range, 1.956 × 10 −4 Ω cm electrical resistivity, 46 cm 2 /V s Hall mobility and 9.21 × 10 21 cm −3 charge carrier concentration. The X-ray photoelectron spectroscopy study has confirmed 0.15 eV binding energy change for Zn 2p 3/2 when 2 at% boron content is mixed without altering electro-optical properties substantially. Finally, using soft modeling importance of these textured ZnO over non-textured films for enhancing the solar cells performance is explored.

Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

Directory of Open Access Journals (Sweden)

I. E. Paulauskas

2011-01-01

Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

Comparative study of Ni and Cu doped ZnO nanoparticles: Structural and optical properties

Science.gov (United States)

Thakur, Shaveta; Thakur, Samita; Sharma, Jyoti; Kumar, Sanjay

2018-05-01

Nanoparticles of undoped and doped (0.1 M Ni2+ and Cu2+) ZnO are synthesized using chemical precipitation method. The crystallite size, morphology, chemical bonding and optical properties of as prepared nanoparticles are determined by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy and UV-visible spectra. XRD analysis shows that the prepared samples are single phase and have hexagonal wurtzite structure. The crystallite size of the doped and undoped nanoparticles is determined using Scherrer method. The crystallite size is found to be increased with concentration of nickel and copper. All stretching and vibrational bands are observed at their specific positions through FTIR. The increase in band gap can be attributed to the different chemical nature of dopant and host cation.

Transparent conductive Ga-doped ZnO films fabricated by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

2012-04-15

Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The phonon-assisted tunneling mechanism of conduction in ZnO nanowires and films

International Nuclear Information System (INIS)

Pipinys, Povilas; Ohlckers, Per

2010-01-01

The phonon-assisted tunneling (PhAT) model is applied for an explanation of the conductivity dependence on temperature and temperature-dependent I-V characteristics measured by other investigators for zinc oxide (ZnO) nanowires and films. Our proposed model describes well not only conductivity dependence on temperature measured in a wide temperature range, but also temperature-dependent I-V data using the same set of parameters characterizing the material under investigation. The values of active phonons energy are estimated from a fit of the conductivity dependence to temperature data with the PhAT theory.

Praseodymium - A Competent Dopant for Luminescent Downshifting and Photocatalysis in ZnO Thin Films

Science.gov (United States)

Narayanan, Nripasree; Deepak, N. K.

2018-05-01

Highly transparent and conducting Zinc oxide (ZnO) thin films doped with Praseodymium (Pr) were deposited on glass substrates by using the spray pyrolysis method. The X-ray diffraction (XRD) analysis revealed the polycrystallinity of the deposited films with a hexagonal wurtzite structure, whereas the energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the incorporation of Pr in the films. The optical energy gap decreased by Pr doping due to the merging of the conduction band with the impurity bands formed within the forbidden gap. The room temperature photoluminescence spectra of the Pr-doped film showed enhancement of visible emission, suggesting efficient luminescent downshifting. The photocatalytic activity of the Pr-doped films is higher than that of undoped films due to the effective suppression of the rapid recombination of the photo-generated electron-hole pairs. The impurity levels formed within the forbidden gap act as efficient luminescent centers and electron traps, which lead to luminescent downshifting and enhanced photocatalytic activity.

Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Gandla, Srinivas; Gollu, Sankara Rao; Sharma, Ramakant; Sarangi, Venkateshwarlu; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2015-10-12

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

Structural Characterization and Magnetic Properties of Undoped and Ti-Doped ZnO Nanoparticles Prepared by Modified Oxalate Route

Directory of Open Access Journals (Sweden)

Ekane Peter Etape

2018-01-01

Full Text Available Ti-doped zinc oxide and pure zinc oxide nanoparticles were synthesized by a modified oxalate route using Averrhoa carambola fruit juice as a natural source of oxalate. The characteristics of the precursors have been investigated by FTIR, TGA, and XRD. The results from the investigation revealed that the precursors are zinc oxalate and Ti-doped zinc oxalate which readily decompose at 450°C. The as-prepared precursors were calcined at 450°C for 4 hours, and the decomposition products have been characterized by XRD, SEM, EDX, and VSM. XRD results revealed crystallinity with hexagonal wurtzite structure, while the average grain size was found to be 26 nm for Ti-doped ZnO and 29 nm for ZnO, using calculations based on Debye-Scherrer equation. Furthermore, the morphological studies by SEM showed particle agglomeration, while the presence of Ti3+ in the zinc oxide lattice is indicated by EDS analysis. Finally the hysteresis loop from VSM results shows that Ti-doped ZnO exhibits ferromagnetism.

Phase transitions in undoped BaCeO₃

DEFF Research Database (Denmark)

Kuzmin, A.V.; Gorelov, V.P.; Melekh, B.T.

2003-01-01

The linear thermal expansion (370-1500 K) and electrical conductivity (950-1220 K) have been measured for undoped BaCeO3 in dry air, pH(2)O = 40 Pa. Samples were made both by conventional sintering and by solidification from inductive melting. Raman spectra were measured from 298 to 773 K...

Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method

Energy Technology Data Exchange (ETDEWEB)

Tabib, Asma; Sdiri, Nasr [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University Tunis El Manar, Tunis 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

2015-02-15

Highlights: • ZnO nanoparticles doped with Na were prepared from sol-gel method. • Electric conductivity and dielectric properties were investigated. • The ZnO conductivity is estimated to be of p-type for critical Na doping of 1.5% at. - Abstract: Na doped ZnO nanoparticles (NPs) were elaborated by sol gel technique. The X-ray diffraction patterns show that the peaks are indexed to the hexagonal structure without any trace of an extra phase. Electric and dielectric properties were investigated using complex impedance spectroscopy. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). The contribution of grain boundary resistance to the total resistance of the system is remarkable. The AC conductivity increases with temperature following the Arrhenius law, with single apparent activation energy for conduction process. The frequency dependence of the electric conductivity follows a simple power law behavior, in according to relation σ{sub AC}(ω) = σ(0) + A ω{sup s}, where s is smaller than 1. The analysis of dc conductivity indicates that the conduction is ionic in nature. The study of its variation, at fixed temperature, with Na content shows sharp decrease which is explained by the formation of Na{sub Zn} acceptor. It was found that the dc conductivity reaches its minimum value for critical Na concentration of 1.5% at which the conductivity is estimated to be of p-type. Impedance and modulus study reveals the temperature dependent non-Debye type relaxation phenomenon. Dielectric studies revealed a promising dielectric properties (relatively high ε′ at low frequencies and low loss at high frequencies). In the low-frequency region, the values of M′ tends to zero suggesting negligible or absent electrode polarization phenomenon. The frequency dependent maxima in the imaginary modulus are found to obey to Arrhenius law.

Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

2014-01-01

In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

Precipitated nickel doped ZnO nanoparticles with enhanced low temperature ethanol sensing properties

Directory of Open Access Journals (Sweden)

Umadevi Godavarti

2017-12-01

Full Text Available The Zn1-xNixO nanoparticles have been synthesized by novel co-precipitation method and systematically characterized by XRD, SEM, TEM and photo luminescence. The XRD patterns confirm the hexagonal wurzite structure without secondary phases in Ni substituted ZnO samples. SEM and TEM are used for the estimation of particle shape and size. In PL study there is a peak in the range of 380–390 nm in all samples that is attributed to the oxygen vacancies. Gas sensing tests reveal that Ni doped ZnO sensor has remarkably enhanced performance compared to pure ZnO detected at an optimum temperature 100 °C. It could detect ethanol gas in a wide concentration range with very high response, fast response–recovery time, good selectivity and stable repeatability. The possible sensing mechanism is discussed. The high response of ZnO Nanoparticles was attributed to large contacting surface area for electrons, oxygen, target gas molecule, and abundant channels for gas diffusion. The superior sensing features indicate the present Ni doped ZnO as a promising nanomaterial for gas sensors. The response time and recovery time of undoped is 75 s and 60 s and 0.25 at% Ni are found to be 60 s and 45 s at 100 °C respectively.

Sensitization of nano-porous ZnO photo-anode by a conjugated conducting polymer

Energy Technology Data Exchange (ETDEWEB)

Sirimanne, P.M. [Nano-Science Laboratory, Institute of Fundamental Studies, Hantana Road, Kandy (Sri Lanka); Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Premalal, E.V.A. [Nano-Science Laboratory, Institute of Fundamental Studies, Hantana Road, Kandy (Sri Lanka); Minoura, H. [Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan)

2011-01-15

Hybrid ZnO films are prepared via one-step electrochemical process. Extraction of organic component from hybrid films results tiny wires like ZnO columns perpendicular to the substrate. Visible light sensitive-conjugated polymer poly(2-methoxy-5-[2 ethylhexyloxy]-1-4-phenylenevinylene, MEH-PPV) was embedded in highly porous ZnO ceramic by a solvent vaporization technique. An attempt was made to fabricate polymer sensitized photovoltaic cell by coupling polymer embedded ZnO electrodes with an electrolyte. Maximum photovoltage of 490 mV is observed for the cell with the configuration of ZnO vertical stroke MEH-PPV vertical stroke I{sup -}/I{sub 3}{sup -} cell. (author)

Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

Energy Technology Data Exchange (ETDEWEB)

Simimol, A. [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Anappara, Aji A. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Greulich-Weber, S. [Department of Physics, Nanophotonic Materials, Faculty of Science, University of Paderborn, 33095 Paderborn (Germany); Chowdhury, Prasanta [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Barshilia, Harish C., E-mail: harish@nal.res.in

2015-06-07

We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

Properties of In–N codoped p-type ZnO nanorods grown through a two-step chemical route

Energy Technology Data Exchange (ETDEWEB)

Duta, M.; Mihaiu, S.; Munteanu, C. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P.; Marin, A.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Nicolescu, M., E-mail: mnicolescu2006@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Modreanu, M. [Tyndall National Institute, University College, Cork (Ireland); Zaharescu, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

2015-07-30

Highlights: • p-Type ZnO film codoped with In, N on glass substrate was obtained. • The films were prepared by sol–gel followed by hydrothermal method. • Influence of annealing regimes on opto-electrical properties was studied. • Thin films morphology consists of interconnected, randomly oriented nanorods. • 3.31 × 10{sup 17} cm{sup −3}carrier concentration and 85% transmission were obtained at 500 °C. - Abstract: By codoping with a donor–acceptor pair through a two-step chemical method we have succeed to obtain p-type ZnO thin films on glass. Firstly, a thin undoped ZnO seed layer was deposited by sol–gel method followed by the deposition of In–N codoped ZnO film obtained through the hydrothermal technique. The influence of post-deposition annealing temperature (100 °C, 300 °C and 500 °C) on the samples was investigated from a structural, chemical, morphological and optoelectrical point of view. X-ray diffractometry (XRD), infrared ellipsometry and X-ray photoelectron spectroscopy (XPS) analyses have confirmed the codoped nature of the ZnO thin films. The XRD pattern analysis has established the films have wurtzite nanocrystalline structure, the crystallite sizes varying between 10 nm and 13 nm with the annealing temperature. Continuous and homogenous films with nanorods surface morphology has been obtained, as visualized by scanning electron microscopy measurements. Hall Effect measurements have established that all samples, regardless of annealing temperature, showed p-type conduction due to the successful incorporation of nitrogen in the film, with the highest carrier concentration registered at 500 °C. This is in good correlation with the nitrogen content in the films as revealed from XPS. In all samples, the XPS depth profiling has shown a nitrogen gradient with higher elemental concentration at the surface.

Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Device Innovation Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2016-09-15

The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gas flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

International Nuclear Information System (INIS)

Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

2012-01-01

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

2015-09-30

Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-04-01

Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

Effect of high-energy electron beam irradiation on the transmittance of ZnO thin films on transparent substrates

International Nuclear Information System (INIS)

Yun, Eui-Jung; Jung, Jin-Woo; Han, Young-Hwan; Kim, Min-Wan; Lee, Byung Cheol

2010-01-01

We investigated in this study the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of undoped ZnO films grown on transparent substrates, such as corning glass and polyethersulfone (PES) plastic substrates, with a radio frequency (rf) magnetron sputtering technique. The ZnO thin films were treated with HEEBI in air at RT with an electron beam energy of 1 MeV and doses of 4.7 x 10 14 - 4.7 x 10 16 electrons/cm 2 . The optical transmittance of the ZnO films was measured using an ultraviolet visible near-infrared spectrophotometer. The detailed estimation process for separating the transmittance of HEEBI-treated ZnO films from the total transmittance of ZnO films on transparent substrates treated with HEEBI is given in this paper. We concluded that HEEBI causes a slight suppression in the optical transmittance of ZnO thin films. We also concluded that HEEBI treatment with a high dose shifted the optical band gap (E g ) toward the lower energy region from 3.29 to 3.28 eV whereas that with a low dose unchanged E g at 3.25 eV. This shift suggested that HEEBI at RT at a high dose acts like an annealing treatment at high temperature.

Micrometer-sized Isolated Patterns of Conductive ZnO derived by Micromoulding

NARCIS (Netherlands)

Göbel, Ole F.; ten Elshof, Johan E.; Blank, David A.H.

2009-01-01

We succeeded in the fabrication of large-area patterns with micrometer-sized, isolated features of a simple oxide by a technically simple patterning method. By micromoulding a polymeric precursor solution for ZnO with an elastomeric (PDMS) mould, and a subsequent heat treatment, patterned ZnO films

Aluminium doping induced enhancement of p-d coupling in ZnO

International Nuclear Information System (INIS)

Cong, G W; Peng, W Q; Wei, H Y; Liu, X L; Wu, J J; Han, X X; Zhu, Q S; Wang, Z G; Ye, Z Z; Lu, J G; Zhu, L P; Qian, H J; Su, R; Hong, C H; Zhong, J; Ibrahim, K; Hu, T D

2006-01-01

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling

Synthesis and Characterization of Mg-doped ZnO Nanorods for Biomedical Applications

Science.gov (United States)

Gemar, H.; Das, N. C.; Wanekaya, A.; Delong, R.; Ghosh, K.

2013-03-01

Nanomaterials research has become a major attraction in the field of advanced materials research in the area of Physics, Chemistry, and Materials Science. Bio-compatible and chemically stable metal nanoparticles have biomedical applications that includes drug delivery, cell and DNA separation, gene cloning, magnetic resonance imaging (MRI). This research is aimed at the fabrication and characterization of Mg-doped ZnO nanorods. Hydrothermal synthesis of undoped ZnO and Mg-doped ZnO nanorods is carried out using aqueous solutions of Zn(NO3)2 .6H2O, MgSO4, and using NH4OH as hydrolytic catalyst. Nanomaterials of different sizes and shapes were synthesized by varying the process parameters such as molarity (0.15M, 0.3M, 0.5M) and pH (8-11) of the precursors, growth temperature (130°C), and annealing time during the hydrothermal Process. Structural, morphological, and optical properties are studied using various techniques such as XRD, SEM, UV-vis and PL spectroscopy. Detailed structural, and optical properties will be discussed in this presentation. This work is partially supported by National Cancer Institute (1 R15 CA139390-01).

The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

Science.gov (United States)

Amini, M N; Saniz, R; Lamoen, D; Partoens, B

2015-02-21

Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

Science.gov (United States)

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

2015-09-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

Energy Technology Data Exchange (ETDEWEB)

Nebatti Ech-Chergui, Abdelkader

2011-07-29

Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

ZnO layers prepared by spray pyrolysis

Science.gov (United States)

Messaoudi, C.; Abd-Lefdil, S.; Sayah, D.; Cadene, M.

1998-02-01

Highly transparent undoped and indium doped ZnO thin films have been grown on glass substrates by using the spray pyrolysis process. Conditions of preparation have been optimized to get good quality and reproducible films with required properties. Polycrystalline films with an hexagonal Wurtzite-type structure were easily obtained under the optimum spraying conditions. Both of samples have shown high transmission coefficient in the visible and infrared wavelength range with sharp absorption edge around 380 nm which closely corresponds to the intrinsic band-gap of ZnO (3.2 eV). Orientation and crystallites size were remarkably modified by deposition temperature and indium doping. Des couches minces de ZnO, hautement transparentes, non dopées et dopées à l'indium ont été élaborées sur un substrat en verre par le procédé de pulvérisation chimique réactive spray. Les conditions de préparation ont été optimisées pour l'obtention de couches reproductibles, de bonne qualité et ayant les propriétés requises. Des films polycristallins, présentant une structure hexagonale de type Wurtzite, ont été aisément obtenus dans les conditions optimales de pulvérisation. Tous les échantillons ont présenté un coefficient de transmission élevé dans le domaine du visible et du proche infrarouge, avec une absorption brutale au voisinage de 380 nm, correspondant au gap optique du ZnO (3,2 eV). L'orientation et la taille des cristallites ont été remarquablement modifiées par la température du dépôt et par le dopage à l'indium.

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

Energy Technology Data Exchange (ETDEWEB)

Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

2017-02-01

Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

Structural, optical and morphological studies of undoped and Zn ...

Indian Academy of Sciences (India)

Structural, optical and morphological studies of undoped and Zn-doped CdSe QDs via aqueous route synthesis. N THIRUGNANAM D GOVINDARAJAN ... Undoped and Zn-doped CdSe quantum dots (QDs) were successfully synthesized by the chemical precipitation method. The structural, optical and morphological ...

Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applications

Science.gov (United States)

Lu, B.; Ma, M. J.; Ye, Y. H.; Lu, J. G.; He, H. P.; Ye, Z. Z.

2013-02-01

Semi-polar ZnO films with surface texture were grown on glass substrates via pulsed-laser deposition (PLD) through Co-Ga co-doping. Oxygen pressure (PO2) was found to have significant effects on the structural and optical properties of the Zn(Co, Ga)O (ZCGO) films. A self-textured film with (1\\,0\\,\\bar {1}\\,1) preferred orientation (PO) was achieved by varying the growth conditions including a crucial narrow PO2 window and growth time. A possible mechanism underlying the PO evolution and the final texture of the films was proposed, which can be attributed to the collaboration of the doping effect and the PO2-dependent evolutionary selection process, in which certain grains can have increased vertical growth rate with respect to the substrate surface through interplane diffusion. Moreover, the growth of undoped pure ZnO films proceeded by using the (1\\,0\\,\\bar {1}\\,1) ZCGO film as a buffer layer. The ZnO layers retained a semi-polar characteristic with improved crystallinity and better optical quality. The epitaxy-like orientation of ZnO layers grown on (1\\,0\\,\\bar {1}\\,1) ZCGO films has applications in the development of semi-polar ZnO-based light-emitting diodes.

Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis

International Nuclear Information System (INIS)

García Núñez, C; García Marín, A; Piqueras, J; Pau, J L; Nanterne, P; Kung, P

2013-01-01

ZnO nanowires (NWs) with different radii (r NW ) have been aligned between pre-patterned electrodes using dielectrophoresis (DEP) for the fabrication of high gain UV sensors. The DEP conditions (voltage amplitude and frequency) and electrode material, geometry and size were optimized to enhance the efficiency during the DEP process. To understand the alignment mechanism of the ZnO NWs, the dielectrophoretic force (F DEP ) was analyzed as a function of the DEP conditions and NW dimensions. These studies showed that the DEP alignment process tends to trap NWs with a smaller radius. The effects of NW size on device performance were analyzed by means of I–V measurements in darkness and under illumination (200 nm NW decreases due to the reduction of the conduction volume, until saturation is reached for r NW 8 A W −1 (measured at 5 V and λ NW , presenting a clear blue-shift for NWs with a lower radius (r NW 2 reduces the dynamic range of the photoresponse due to a strong increase of the dark current. (paper)

First-principles study on the effect of high In doping on the conductivity of ZnO

International Nuclear Information System (INIS)

Hou Qing-Yu; Li Ji-Jun; Ying Chun; Zhao Chun-Wang; Zhao Er-Jun; Zhang Yue

2013-01-01

Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly In-doped supercells of Zn 0.9375 In 0.0625 O and Zn 0.875 In 0.125 O are constructed, and the geometry optimizations of the three models are carried out. The total density of states (DOS) and the band structures (BS) are also calculated. The calculation results show that in the range of high doping concentration, when the doping concentration is hihger than a specific value, the conductivity decreases with the increase of the doping concentration of In in ZnO, which is in consistence with the change trend of the experimental results

DC conduction mechanism and dielectric properties of Poly (methyl methacrylate)/Poly (vinyl acetate) blends doped and undoped with malachite green

International Nuclear Information System (INIS)

Abd-El Kader, F.H.; Osman, W.H.; Hafez, R.S.

2013-01-01

Cast thin films of Poly (methyl methacrylate)/Poly (vinyl acetate) blends of different concentrations undoped and doped with malachite green have been prepared and subjected to both dc electrical conduction and dielectric spectroscopy measurements. The analysis of dc electrical conduction data showed that the space charge limited current mechanism has been dominant for Poly (vinyl acetate) while Schottky-Richardson conduction mechanism prevailed for the Poly (methyl methacrylate) and blended samples. The values of field lowering constant β and the thermal activation energy ΔE involved in the dc conduction were reported, which provide another support for the suggested Schottky-Richardson mechanism. The increase in current for the blend sample doped with malachite green has been attributed to the formation of charge transfer complexes inside the polyblend matrix. The dielectric constant as a function of temperature for all samples have been calculated which are affected by the composition ratio and the addition of dye. The relaxation peak that appeared in the dielectric loss curve at 347 K for the doped blend sample is related to local dipoles that are present in the dye material. The obtained relaxation process spectra present in the investigated samples were analyzed with the well-known model of Havriliak-Negami.

Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

2015-10-01

Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

Formation of polar surfaces in microstructured ZnO by doping with Cu and applications in photocatalysis using visible light

International Nuclear Information System (INIS)

Pawar, Rajendra C.; Choi, Da-Hyun; Lee, Jai-Sung; Lee, Caroline S.

2015-01-01

We report the synthesis of copper-doped zinc oxide microstructures with a large amount of polar surfaces using a single-step facile chemical method by collecting powders of zinc oxide (ZnO) microstructures. It was found that rod-like morphology of ZnO transformed into disk and sphere-like structure with nanosheets. Hollow disk-like structures were formed due to the surface etching properties of Cl − ions in the copper chloride precursor. The photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes was measured under irradiation with visible light using the structures as catalysts. The Cu-doped ZnO exhibited better photodegradation properties than did undoped ZnO. The enhanced performance is attributed to the existence of (001) polar surfaces, oxygen vacancies, and increased optical absorbance at visible wavelengths, which is consistent with the field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), room temperature photoluminescence (PL), and optical absorbance measurements. These favorable photocatalytic properties of the doped microstructures demonstrate their potential for use in wastewater treatment. - Graphical abstract: Graphical abstract shows the electron transfer mechanism under visible light for Cu-doped ZnO microstructures and the photocatalytic degradation of dye. - Highlights: • Cu induced microstructures of ZnO with polar surfaces. • Methylene blue degradation under visible light irradiation. • Room temperature ferromagnetism due to oxygen vacancies in ZnO. • 7% Cu–ZnO has highest photocatalytic activity

Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

2015-09-15

Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol.

Science.gov (United States)

Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

2014-08-15

A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste "fabric filter dust" by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments. Copyright © 2014 Elsevier B.V. All rights reserved.

Electrical properties of lightly Ga-doped ZnO nanowires

Science.gov (United States)

Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.

2017-12-01

We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.

First principles study of magneto-optical properties of Fe-doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Shaoqiang, Guo [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Qingyu, Hou, E-mail: by0501119@126.com [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Zhenchao, Xu [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Chunwang, Zhao [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); College of Arts and Sciences, Shanghai Maritime University, Shanghai 201306 (China)

2016-12-15

Studies on optical band gaps and absorption spectra of Fe-doped ZnO have conflicting conclusions, such as contradictory redshifted and blueshifted spectra. To solve this contradiction, we constructed models of un-doped and Fe-doped ZnO using first-principles theory and optimized the geometry of the three models. Electronic structures and absorption spectra were also calculated using the GGA+U method. Higher doping content of Fe resulted in larger volume of doped system, and higher total energy resulted in lower stability. Higher formation energy also led to more difficult doping. Meanwhile, the band gaps broadened and the absorption spectra exhibited an evident blue shift. The calculations were in good agreement with the experimental results. Given the unipolar structure of ZnO, four possible magnetic coupling configurations for Zn{sub 14}Fe{sub 2}O{sub 16} were calculated to investigate the magnetic properties. Results suggest that Fe doping can improve ferromagnetism in the ZnO system and that ferromagnetic stabilization was mediated by p–d exchange interaction between Fe-3d and O-2p orbitals. Therefore, the doped system is expected to obtain high stability and high Curie temperature of diluted magnetic semiconductor material, which are useful as theoretical bases for the design and preparation of the Fe-doped ZnO system’s magneto-optical properties. - Highlights: • A biomonitoring tool for the freshwater zone of template estuaries. • Water quality characterization related to nutrients and organic matter enrichment. • The percentage of a group of 24 tolerant species were capable of detecting the impairment of the water quality. • Characterization of morpho-functional traits of the selected tolerant species.

Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

International Nuclear Information System (INIS)

Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

2015-01-01

Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

Magnetic and optical properties of manganese doped ZnO nanoparticles synthesized by sol-gel technique

KAUST Repository

Omri, Karim; El Ghoul, Jaber; Lemine, O. M.; Bououdina, M.; Zhang, Bei; El Mir, Lassaad

2013-01-01

Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.

Magnetic and optical properties of manganese doped ZnO nanoparticles synthesized by sol-gel technique

KAUST Repository

Omri, Karim

2013-08-01

Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.

Influences of Co doping on the structural and optical properties of ZnO nanostructured

Science.gov (United States)

Majeed Khan, M. A.; Wasi Khan, M.; Alhoshan, Mansour; Alsalhi, M. S.; Aldwayyan, A. S.

2010-07-01

Pure and Co-doped ZnO nanostructured samples have been synthesized by a chemical route. We have studied the structural and optical properties of the samples by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), field-emission transmission electron microscope (FETEM), energy-dispersive X-ray (EDX) analysis and UV-VIS spectroscopy. The XRD patterns show that all the samples are hexagonal wurtzite structures. Changes in crystallite size due to mechanical activation were also determined from X-ray measurements. These results were correlated with changes in particle size followed by SEM and TEM. The average crystallite sizes obtained from XRD were between 20 to 25 nm. The TEM images showed the average particle size of undoped ZnO nanostructure was about 20 nm whereas the smallest average grain size at 3% Co was about 15 nm. Optical parameters such as absorption coefficient ( α), energy band gap ( E g ), the refractive index ( n), and dielectric constants ( σ) have been determined using different methods.

ZnO transparent conductive oxide for thin film silicon solar cells

Science.gov (United States)

Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

2010-03-01

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

Enhanced Raman scattering and nonlinear conductivity in Ag-doped hollow ZnO microspheres

Energy Technology Data Exchange (ETDEWEB)

Tringe, Joseph W.; Levie, Harold W.; McCall, Scott K.; Teslich, Nick E.; Wall, Mark A.; Orme, Christine A.; Matthews, Manyalibo J. [Lawrence Livermore National Laboratory, Livermore, CA (United States)

2012-10-15

Hollow spherical ZnO particles doped with Ag were synthesized with a two-step oxidation and sublimation furnace annealing process. Ag nanoparticle precipitates, as observed by transmission electron microscopy, were present in the polycrystalline ZnO matrix at Ag concentrations below 0.02 mol%, significantly below the 0.8 mol% solubility limit for Ag in ZnO. Enhanced Raman scattering of ZnO phonon modes is observed, increasing with Ag nanoparticle concentration. A further enhancement in Raman scattering due to resonance effects was observed for LO phonons excited by 2.33-eV photons as compared with Raman scattering under 1.96-eV excitation. Room-temperature photoluminescence spectra showed both a near-band-edge emission due to free exciton transitions and a mid-gap transition due to the presence of singly ionized oxygen vacancies. ZnO:Ag particles were measured electrically in a packed column and in monolithic form, and in both cases displayed nonlinear current-voltage characteristics similar to those previously observed in sintered ZnO:Ag monoliths where Ag-enhanced disorder at grain boundaries is thought to control current transport. We demonstrate therefore that Ag simultaneously modifies the electrical and optical properties of ZnO particles through the introduction of vacancies and other defects. (orig.)

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

Science.gov (United States)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer

International Nuclear Information System (INIS)

Lin, Yow-Jon; Jheng, Mei-Jyuan; Zeng, Jian-Jhou

2010-01-01

This study investigates the current density-voltage (J-V) characteristics of Au/n-type ZnO and Au/polyaniline (PANI)/n-type ZnO devices. ZnO films were prepared by the sol-gel method. For Au/n-type ZnO devices, native defects and impurities resident within the ZnO depletion region contribute to barrier thinning of, carrier hopping across, and tunneling through the Schottky barrier. This leads to the formation of nonalloyed ohmic contacts. However, rectifying junctions were formed on n-type ZnO by employing the simple technique of spin-coating PANI to act as the electron-blocking layer. Our present results suggest that the ZnO depletion region at the PANI/n-type ZnO interface is not the origin of the rectifying behavior of Au/PANI/n-type ZnO contact. In addition, the presence of the built-in potential of Au/PANI/n-type ZnO devices could result in the shift of the J-V curve toward negative voltage. Excellent agreement between simulated and measured data was obtained when the built-in potential was taken into account in the J-V relationship.

Low temperature fabrication of ZnO compact layer for high performance plastic dye-sensitized ZnO solar cells

International Nuclear Information System (INIS)

Hu Fangyi; Xia Yujing; Guan Zisheng; Yin Xiong; He Tao

2012-01-01

Highlights: ► ZnO compact layer is prepared via simple electrochemical method at low temperature. ► Compact layer can effectively block electron transfer from TCO to electrolyte. ► DSC PCE is improved by 17% when ZnO compact layer is introduced. ► Plastic DSCs with ZnO compact layer show a PCE of 3.29% under AM1.5 100 mW cm −2 . ► The above efficiency is comparable to that with high temperature sintering step. - Abstract: ZnO compact layer has been fabricated on transparent conducting oxide glass and plastic polymer substrates at low temperature via electrodeposition. The results of dark current and cyclic voltammetric measurements demonstrate that the compact layer can effectively reduce the short circuit from transparent conducting oxide to electrolyte in dye-sensitized ZnO solar cells, leading to an increase of open-circuit photovoltage and fill factor of the devices and, thereby, the power conversion efficiency. The resultant plastic dye-sensitized ZnO solar cell presents an efficiency of 3.29% under illumination of 100 mW cm −2 , AM 1.5G. This indicates that electrodeposition is a viable method to fabricate ZnO compact layer for high performance flexible devices.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L; Racke, David A; Schulz, Philip; Li, Hong; Winget, Paul; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K; Bredas, Jean-Luc; Berry, Joseph J; Graham, Samuel; Monti, Oliver L A

2016-01-01

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L

2016-02-12

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

International Nuclear Information System (INIS)

Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

2015-01-01

Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

Directory of Open Access Journals (Sweden)

Johnson Truong

2018-04-01

Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki-Wook; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon, 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, 85, Munmu-ro, Goesan-eup, Goesan-gun, Chungbuk, 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of)

2016-05-05

We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 °C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11–22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11–22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11–22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. - Highlights: • Polarity control of ZnO film grown in m-/c-sapphire and semipolar GaN template. • Achievement of high quality nonpolar m-plane ZnO flims on semipolar (11–22) GaN template. • The simultaneous improvements of carrier concentration and mobility in the nonpolar ZnO TCO flims. • Nonpolar ZnO TCO increases current spreading length and light output power of semipolar GaN-LED.

Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol

International Nuclear Information System (INIS)

Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

2014-01-01

Highlights: • Multi-doped ZnO (M-ZnO) was prepared from Zn-bearing dust for waste-cleaning-waste. • All the dopants M (Fe, Mg, Ca and Al) and Zn are recovered from the dust. • Doping by the dust-derived M expands excitability of ZnO to visible light region. • M-ZnO has good catalytic activity in the degradation of phenol under visible light. - Abstract: A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste “fabric filter dust” by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments

Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

Energy Technology Data Exchange (ETDEWEB)

Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

2015-09-01

Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

Characterization of donor states in ZnO

International Nuclear Information System (INIS)

Seghier, D.; Gislason, H.P.

2007-01-01

We performed electrical and optical measurements on as-grown ZnO which exhibits n-type conductivity. So far, neither the origin of the residual conductivity nor the electrical properties of the responsible defects is fully understood. We investigated shallow and deep donors in ZnO materials grown with pulsed laser injection using admittance spectroscopy. We identifed shallow donors with ionization energies as low as 15 meV which may be attributed to native defects. Annealing in nitrogen ambient enhances the conductivity by further lowering the ionization energy of the shallow donors. Using optically excited admittance spectroscopy we also found deep defects. They are strongly metastable and account for a significant part of the persistent photoconductivity in our ZnO materials

Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Science.gov (United States)

Ali, D.; Butt, M. Z.; Coughlan, C.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

2018-04-01

We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 ∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using i n situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 ×10 -3Ω cm , high optical quality (T ≈90 % ), and sheet resistance of 32 Ω /□ has been obtained without any need for postgrowth treatments.

Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

Science.gov (United States)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2017-05-01

ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

2009-01-01

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

International Nuclear Information System (INIS)

Li, Q.; Polyakov, A.Y.; Skowronski, M.; Sanchez, E.K.; Loboda, M.J.; Fanton, M.A.; Bogart, T.; Gamble, R.D.

2005-01-01

Chemical elemental analysis, temperature-dependent Hall measurements, deep-level transient spectroscopy, and contactless resistivity mapping were performed on undoped semi-insulating (SI) and lightly nitrogen-doped conducting 6H-SiC crystals grown by physical vapor transport (PVT). Resistivity maps of commercial semi-insulating SiC wafers revealed resistivity variations across the wafers between one and two orders of magnitude. Two major types of variations were identified. First is the U-shape distribution with low resistivity in the center and high in the periphery of the wafer. The second type had an inverted U-shape distribution. Secondary-ion-mass spectrometry measurements of the distribution of nitrogen concentration along the growth axis and across the wafers sliced from different locations of lightly nitrogen-doped 6H-SiC boules were conducted. The measured nitrogen concentration gradually decreased along the growth direction and from the center to the periphery of the wafers. This change gives rise to the U-like distribution of resistivity in wafers of undoped SI-SiC. The concentrations of deep electron traps exhibited similar dependence. Compensation of nitrogen donors by these traps can result in the inverted U-like distribution of resistivity. Possible reasons for the observed nonuniformities include formation of a (0001) facet in PVT growth coupled with orientation-dependent nitrogen incorporation, systematic changes of the gas phase composition, and increase of the deposition temperature during boule growth

Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

Science.gov (United States)

Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

2016-04-01

Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

Science.gov (United States)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

Experimental study on structural, optoelectronic and room temperature sensing performance of Nickel doped ZnO based ethanol sensors

Science.gov (United States)

Sudha, M.; Radha, S.; Kirubaveni, S.; Kiruthika, R.; Govindaraj, R.; Santhosh, N.

2018-04-01

Nano crystalline undoped (1Z) Zinc Oxide (ZnO) and 5, 10 and 15 Wt. % (1ZN, 2ZN and 3ZN) of Nickel doped ZnO based sensors were fabricated using the hydrothermal approach on Fluorine doped Tin Oxide (FTO) glass substrates. X-ray diffraction (XRD) analysis proved the hexagonal Wurtzite structure of ZnO. Parametric variations in terms of dislocation density, bond length, lattice parameters and micro strain with respect to dopant concentration were analysed. The prominent variations in the crystallite size, optical band gap and Photoluminescence peak ratio of devices fabricated was observed. The Field Emission Scanning Electron Microscope (FESEM) images showed a change in diameter and density of the nanorods. The effect of the operating temperature, concentration of ethanol and the different doping levels of sensitivity, response and recovery time were investigated. It was inferred that 376% of sensitivity with a very quick response and recovery time of <5 s and 10 s respectively at 150 °C of 3ZN sensor has better performance compared to other three sensors. Also 3ZN sensor showed improved sensitivity of 114%, even at room temperature with response and recovery time of 35 s and 45 s respectively.

Implanted ZnO thin films: Microstructure, electrical and electronic properties

International Nuclear Information System (INIS)

Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

2007-01-01

Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

Generic R&D on undoped cesium iodide and lead fluoride

Energy Technology Data Exchange (ETDEWEB)

Kierstead, J.A.; Levy, P.W.; Stoll, S.; Woody, C.L. [Brookhaven National Lab., Upton, NY (United States); Goldberg, M.; Horwitz, N.; Skwarnicki, T.; Sobolewski, Z.; Anderson, D.F.; Ramberg, E.J.; Zimmerman, J.

1991-12-31

A summary is given on the recent progress on generic R&D on undoped CsI and PbF{sub 2}. Both of these materials are being investigated for use as a high resolution electromagnetic calorimeter for RHIC, as well as for other potential applications. Results are given on the development of a low gain readout system for use with undoped CsI crystals. A study has also been made of radiation damage in both undoped and thallium doped CsI. The progress on the growth of large, high quality PbF{sub 2} crystals, which would be suitable for calorimeter applications, is discussed, and some first test beam results with a prototype PbF{sub 2} calorimeter are given. Finally, results are presented on the improved radiation resistance of the new PbF{sub 2} material.

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

Ergonomic Synthesis Suitable for Industrial Production of Silver-Festooned Zinc Oxide Nanorods

Science.gov (United States)

Khan, G. R.; Khan, R. A.

2015-07-01

For maximizing productivity, minimizing cost, time-boxing process and optimizing human effort, a single-step, cost-effective, ultra-fast and environmentally benign synthesis suitable for industrial production of nanocrystalline ZnO, and Ag-doped ZnO has been reported in this paper. The synthesis based on microwave-supported aqueous solution method used zinc acetate dehydrate and silver nitrate as precursors for fabrication of nanorods. The synthesized products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and UV-Vis-NIR spectroscopy. The undoped and Ag-doped ZnO nanorods crystallized in a hexagonal wurtzite structure having spindle-like morphology. The blue shift occurred at absorption edge of Ag-doped ZnO around 260 nm compared to 365 nm of bulk ZnO. The red shift occurred at Raman peak site of 434 cm-1 compared to characteristic wurtzite phase peak of ZnO (437 cm-1). The bandgap energies were found to be 3.10 eV, 3.11 eV and 3.18 eV for undoped, 1% Ag-doped, and 3% Ag-doped ZnO samples, respectively. The TEM results provided average particle sizes of 17 nm, 15 nm and 13 nm for undoped, and 1% and 3% Ag-doped ZnO samples, respectively.

Power-dependent photocatalytic activity of ZnO

Energy Technology Data Exchange (ETDEWEB)

Chun, So Yeon; Han, Noh Soo; Jeong, Seong Hyun; Park, Seung Min; Song, Jae Kyu [Dept. of Chemistry, Kyung Hee University, Seoul (Korea, Republic of); Moon, Cheol Joo; Choi, Myong Yong [Dept. of Chemistry (BK21) and Research Institute of Natural Science, Gyeongsang NationalUniversity, Jinju (Korea, Republic of)

2017-03-15

the power-dependent photocatalytic activity of ZnO was examined for the photoreduction processes of Rh101 and AN in the presence of hole scavengers, where the fluorescence spectra were measured as a function of irradiation time and excitation intensity. The concentration of the reactants decreased, while the concentration of the products increased accordingly, which indicated the single-electron reduction process by electrons supplied from the conduction band of ZnO. Despite the single-electron process, the efficiency of the photoreaction depended nonlinearly on the excitation intensity, which was explained by the saturation of defect states in ZnO. The enhanced ratio of available electrons in ZnO led to a superlinear increase in the photoreduction efficiency, while the single-electron process linearly reflected the electrons available in ZnO.

Properties of Nb-doped ZnO transparent conductive thin films ...

Indian Academy of Sciences (India)

Administrator

by rf magnetron sputtering using a high quality ceramic target ... Guangxi Key Laboratory of Information Materials, Guilin University of Electronic ... films are highly textured along the c axis and perpendicular to the surface of the substrate. ... ZnO films; Nb-doped; magnetron sputtering; optical and electrical properties. 1.

Intrinsic luminescence of un-doped borate glasses

International Nuclear Information System (INIS)

Kindrat, I.I.; Padlyak, B.V.; Drzewiecki, A.

2017-01-01

The nature of intrinsic luminescence in the un-doped borate glasses of different compositions has been investigated using spectroscopic methods including photoluminescence, optical absorption, electron paramagnetic resonance (EPR), and thermally stimulated luminescence (TSL). The un-doped borate glasses with Li 2 B 4 O 7 , LiKB 4 O 7 , CaB 4 O 7 , and LiCaBO 3 basic compositions were obtained from corresponding polycrystalline compounds in the air with usage the standard technology of glasses. Three different broad emission bands in the UV–Visible spectral range have been observed under different wavelength of photoexcitation. The luminescence kinetics of the observed emission bands have been registered and analysed. The nature and possible mechanisms of the intrinsic luminescence in the investigated borate glasses are considered and discussed based on the obtained results and referenced data.

16.1% Efficient Hysteresis-Free Mesostructured Perovskite Solar Cells Based on Synergistically Improved ZnO Nanorod Arrays

KAUST Repository

Mahmood, Khalid

2015-06-01

Significant efficiency improvements are reported in mesoscopic perovskite solar cells based on the development of a low-temperature solution-processed ZnO nanorod (NR) array exhibiting higher NR aspect ratio, enhanced electron density, and substantially reduced work function than conventional ZnO NRs. These features synergistically result in hysteresis-free, scan-independent, and stabilized devices with an efficiency of 16.1%. Electron-rich, nitrogen-doped ZnO (N:ZnO) NR-based electron transporting materials (ETMs) with enhanced electron mobility produced using ammonium acetate show consistently higher efficiencies by one to three power points than undoped ZnO NRs. Additionally, the preferential electrostatic interaction between the -nonpolar facets of N:ZnO and the conjugated polyelectrolyte polyethylenimine (PEI) has been relied on to promote the hydrothermal growth of high aspect ratio NR arrays and substantially improve the infiltration of the perovskite light absorber into the ETM. Using the same interactions, a conformal PEI coating on the electron-rich high aspect ratio N:ZnO NR arrays is -successfully applied, resulting in a favorable work function shift and altogether leading to the significant boost in efficiency from <10% up to >16%. These results largely surpass the state-of-the-art PCE of ZnO-based perovskite solar cells and highlight the benefits of synergistically combining mesoscale control with doping and surface modification. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

DEFF Research Database (Denmark)

MacLeod, S. J.; See, A. M.; Keane, Z. K.

2014-01-01

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However......, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET....

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

Science.gov (United States)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Electrical properties of ZnO thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

2006-04-01

We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

Electrical properties of ZnO thin films grown by MOCVD

International Nuclear Information System (INIS)

Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

2006-01-01

We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

Acceptors in ZnO

Energy Technology Data Exchange (ETDEWEB)

McCluskey, Matthew D., E-mail: mattmcc@wsu.edu; Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Walter, Eric D. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Norton, M. Grant; Harrison, Kale W. [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920 (United States); Ha, Su [Voiland School of Chemical Engineering and Bioengineering, Washington State University, Pullman, Washington 99164-6515 (United States)

2015-03-21

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

2015-10-05

Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

Bipolar ferroelectric fatigue in (K0.5Na0.5)(Nb0.7Ta0.3)O3 ceramics and improved fatigue endurance on addition of ZnO

Science.gov (United States)

Vineetha, P.; Shanmuga Priya, B.; Venkata Saravanan, K.

2018-04-01

Ferroelectric ceramics are the key components in piezoelectric devices used today, thus long term reliability is a major industrial concern. The two important things that have to be considered in the ferroelectric material based device are aging and fatigue. The first one describes degradation with time whereas the later one is characterized by the change of material property during electrical loading. In the present work ferroelectric polarization and bipolar fatigue properties of undoped and ZnO doped lead free (K0.5Na0.5)(Nb0.7Ta0.3)O3 (KNNT) ceramics prepared by solid state reaction method were investigated. X-ray diffraction analysis of the samples reveal perovskite monoclinic phase along with the secondary phase of K2Nb4O11. The ferroelectric studies indicate that ZnO addition reduce fatigue as well as a well saturated hysteresis loop is obtained. The results reveal that addition of ZnO enhances the ferroelectric properties of KNNT ceramics.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

Science.gov (United States)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

International Nuclear Information System (INIS)

Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

2007-01-01

The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

Simple Preparation of ZnO Nano-layer by Sol-Gel Method as Active Electrode in P3HT/ZnO Heterojunction Solar Cell

Science.gov (United States)

Aprilia, Annisa; Herman, Hidayat, Rahmat

2010-10-01

Highly transparent undoped ZnO thin films have been prepared on glass and indium tin oxide substrates with simple process by sol-gel route and dip-coating deposition. Gel precursor of ZnO was prepared from zinc acetat dehydrate solution in methanol with the addition of trietylamine as stabilizing agent. Thin layer of gel precursor was prepared by dip coating and then followed by calcination at 400° C for 5 minute in air atmosphere. The thickness of the resulted ZnO thin film produced by ten times coating is about 150 nm. The films shows high transmittance larger than 98% in the visible region (400-800 nm). Absorption is observed in the UV region with absorption onset at about 390 nm indicating varying band gap between 3.18 eV until 3.23 eV depending on the number of coating layer. The AFM image shows that the films seems to be constructed from random stacking of nano-sized ZnO particle in the order of 50 nm. Among the prepared samples, the lowest resistivity is about 1.8×107 Ωm observed in the five-layer coating film. In order to fabricate solar cell structure, P3HT was deposited onto the ZnO thin film layer by spin casting technique and then followed by metal (Au) layer deposition by thermal evaporation. The formed solar cell has the inverted type solar cell with ITO/ZnO/P3HT/Au configuration. By the insertion ZnO layer, the photocurrent was improved by more than ten orders of magnitude in comparison to that of without ZnO layer. The measured photocurrent decreases at large number of coating layer which is supposed to be related with the current limitation by the effective carrier path length in ZnO layer.

Enhancement of oxygen vacancies and solar photocatalytic activity of zinc oxide by incorporation of nonmetal

International Nuclear Information System (INIS)

Patil, Ashokrao B.; Patil, Kashinath R.; Pardeshi, Satish K.

2011-01-01

B-doped ZnO and N-doped ZnO powders have been synthesized by mechanochemical method and characterized by TG–DTA, XRD, SEM–EDX, XPS, UV–visible and photoluminescence (PL) spectra. X-ray diffraction data suggests the hexagonal wurtzite structure for modified ZnO crystallites and the incorporation of nonmetal expands the lattice constants of ZnO. The room temperature PL spectra suggest more number of oxygen vacancies exist in nonmetal-doped ZnO than that of undoped zinc oxide. XPS analysis shows the substitution of some of the O atoms of ZnO by nonmetal atoms. Solar photocatalytic activity of B-doped ZnO, N-doped ZnO and undoped ZnO was compared by means of oxidative photocatalytic degradation (PCD) of Bisphenol A (BPA). B-doped ZnO showed better solar PCD efficiency as compare to N-doped ZnO and undoped ZnO. The PCD of BPA follows first order reaction kinetics. The detail mechanism of PCD of Bisphenol A was proposed with the identification of intermediates such as hydroquinone, benzene-1,2,4-triol and 4-(2-hydroxypropan-2-yl) phenol. - Graphical Abstract: B-doped ZnO and N-doped ZnO synthesized by mechanochemical method were characterized by various techniques. Solar photocatalytic degradation of Bisphenol-A is in the order of B-ZnO>N-ZnO>ZnO. Highlights: ► B-doped ZnO and N-doped ZnO powders have been synthesized by mechanochemical method. ► PL spectra suggest oxygen vacancies are in order of B-doped ZnO>N-doped ZnO>ZnO. ► Solar PCD efficiency is in order of B-doped ZnO>N-doped ZnO>ZnO for Bisphenol A.

Structural and spectral properties of undoped and tungsten doped Zn3(PO4)2ZnO nanopowders

Science.gov (United States)

Satyavathi, K.; Subba Rao, M.; Nagabhaskararao, Y.; Cole, Sandhya

2018-01-01

Pure and tungsten doped Zn3(PO4)2ZnO nanopowders (NPs) are prepared using sol-gel method. It has the longest track record of used in dentistry. It is used for cementation of inlays, crowns and orthodontic appliances. The systematic investigations like X-ray Diffraction (XRD), Scanning electron microscope (SEM) with energy dispersive X-ray (EDX) spectroscope, Transmission electron microscope (TEM), Fourier transform infrared (FT-IR) spectroscopy, Optical absorption, Photoluminescence (PL) and Electron Paramagnetic Resonance (EPR) spectroscopic techniques are carried out for the prepared NPs. XRD pattern reveals that the prepared samples are in crystalline nature in which Zn3(PO4)2 corresponding to monoclinic phase and ZnO corresponding to hexagonal wurtzite phase, the average crystallite size of prepared nanopowders is in the range of 20-30 nm. The lattice strain, lattice cell parameters, unit cell volume and dislocation density of the prepared NPs are also calculated. The morphology of the prepared NPs is analyzed with SEM and TEM images. The distribution of Zn, P, O and W species in the prepared samples are identified by the chemical composition mapping through EDX. IR spectra of prepared samples exhibit the characteristic sharp absorption band peaks. The sharp absorption bands observed in the region 1200-900 cm-1 are due to complex stretching of characteristic PO43- groups. The absorption spectra exhibit a broad band around 696 nm is recognized due to 2B2g → 2B1g (dxy → dx2- y2) transition of tungsten ions. The PL spectra exhibit four emission peaks in the visible region indicating the quantum-confinement-induced photoluminescence. The CIE chromaticity diagram suggests that the prepared NPs have good color purity. The EPR spectra indicate that the W5+ ions occupy octahedral site symmetry in the host lattice.

Al-Doped ZnO Monolayer as a Promising Transparent Electrode Material: A First-Principles Study

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Mingyang Wu

2017-03-01

Full Text Available Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

NARCIS (Netherlands)

Garcia - Alonso, D.; Potts, S.E.; Helvoirt, van C.A.A.; Verheijen, M.A.; Kessels, W.M.M.

2015-01-01

Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation of B-doped ZnO films by atomic layer deposition (ALD) at 150 °C was studied. The B source was triisopropyl

Effect of Sn doping on structural, mechanical, optical and electrical properties of ZnO nanoarrays prepared by sol-gel and hydrothermal process

Science.gov (United States)

Agarwal, Manish Baboo; Sharma, Akash; Malaidurai, M.; Thangavel, R.

2018-05-01

Undoped and Sn doped Zinc oxide nanorods were prepared by two step process: initially growth of seed layers by sol-gel spin coating technique and then zinc oxide nanorods by hydrothermal process using the precursors zinc nitrate hexahydrate, hexamine and tin chloride. The effects on the electrical, optical, mechanical and structural properties for various Sn concentrations were studied. The crystalline phase determination from X-ray diffraction (XRD) confirms that Sn doped ZnO nanorods have hexagonal wurtzite structure. The variations of stress and strain with different doping concentration of Sn in ZnO nanorods were studied. The doping effect on electrical properties and optical bandgap is estimated by current voltage characteristics and absorbance spectra respectively. The surface morphology was studied with field emission scanning electron microscope (FESEM), which shows that the formation of hexagonal nanorods arrays with increasing Sn concentration. The calculated value of Young's modulus of elasticity (Y) for all the samples remains same. These results can be used in optoelectronic devices.

In-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Hartung, David; Gather, Florian; Kronenberger, Achim; Kuhl, Florian; Meyer, Bruno K.; Klar, Peter J. [I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

2012-07-01

In this work we present in-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films. Borosilicate glass with a thickness of 50 microns and low thermal conductivity for improving the signal to noise ratio was used as substrate material. The above different films are deposited by rf-sputtering and have a thickness of about 1 micron. Our approach is a steady-state measurement. A wide metal wire on the film is used as a heater and two parallel lying narrow wires at distances of 100 microns and 200 microns from the heater wire, respectively, serve as the temperature sensors. The wire structure design is transfered on to the thin films by photolithography and metal evaporation. Measurements of the in-plane thermal conductivities of the above mentioned materials are presented and compared with corresponding results in the literature.

Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Anwand, Wolfgang; Brauer, Gerhard; Cowan, Thomas E. [Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Cizek, Jakub; Kuriplach, Jan; Prochazka, Ivan [Department of Low Temperature Physics, Charles University, V Holesovickach 2, 18000 Prague (Czech Republic); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik, Fakultaet fuer Luft- und Raumfahrttechnik, Universitaet der Bundeswehr, Heisenbergweg 39, 85579 Neubiberg (Germany)

2010-11-15

Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content of bound hydrogen (H-b) before and after the remote H plasma treatment at the polished side of the crystals was determined at depths of 100 and 600 nm, respectively, using nuclear reaction analysis. At a depth of 100 nm, H-b increased from (11.8{+-}2.5) to (48.7{+-}7.6) x 10{sup 19} cm{sup -3} after remote H plasma treatment, whereas at 600 nm no change in H-b was observed. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Surface modification and electrochemical behaviour of undoped nanodiamonds

International Nuclear Information System (INIS)

Zang Jianbing; Wang Yanhui; Bian Linyan; Zhang Jinhui; Meng Fanwei; Zhao Yuling; Ren Shubin; Qu Xuanhui

2012-01-01

Surface modifications of undoped nanodiamond (ND) particles were carried out through different annealing treatments. The methods of Fourier transform infrared spectroscopy, Raman spectroscopy, and transmission electron microscopy were used to characterize the ND surface before and after the annealing process. The electrochemical properties of the modified ND powders in aqueous solution were investigated with Fe(CN) 6 3−/4− as a redox probe. When the annealing temperature was below 850 °C, vacuum annealing removed parts of the oxygen-containing surface functionalities from the ND surface and produced more sp 2 carbon atoms in the shell. The charge transfer of the Fe(CN) 6 3−/4− redox couple decreased with increasing annealing temperature. Re-annealing in air restored the original surface conditions: few sp 2 -bonded carbon atoms and similar surface functionalities, and thus the electrochemical activity. When ND was annealed in vacuum at 900–1100 °C, more serious graphitization produced a continuous fullerenic shell wrapped around a diamond core, which had a high conductivity and electrochemical activity. This provides a novel nanoparticle with high conductivity and high stability for electrochemical applications.

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

International Nuclear Information System (INIS)

Li, Wanjun; Qin, Guoping; Fang, Liang; Ye, Lijuan; Wu, Fang; Ruan, Haibo; Zhang, Hong; Kong, Chunyang; Zhang, Ping

2015-01-01

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn i ) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm −1 . We first report that 275 cm −1 mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm −1 mode is attributed to Zn i related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn i related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm −1 and also the natural n-type conductivity in ZnO

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

Energy Technology Data Exchange (ETDEWEB)

Li, Wanjun; Qin, Guoping [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Ye, Lijuan; Wu, Fang [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Ruan, Haibo [Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhang, Hong; Kong, Chunyang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Zhang, Ping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)

2015-04-14

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.

Evolution of voids in Al+-implanted ZnO probed by a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Yamamoto, S.; Kawasuso, A.; Yuan, X.L.; Sekiguchi, T.; Suzuki, R.; Ohdaira, T.

2004-01-01

Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 10 15 Al + /cm 2 . Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V 8 , are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter increases in the temperature range from 200 deg. C to 600 deg. C suggesting further agglomeration of vacancy clusters to voids. Detailed analyses of Doppler broadening spectra show formation of positronium after 600 deg. C annealing of the implanted samples with doses higher than 10 14 Al + /cm 2 . Positron lifetime measurements further suggest that the void diameter is about 0.8 nm. The voids disappear and the vacancy concentration reaches the detection limit after annealing at 600-900 deg. C. Hall measurement shows that the implanted Al + ions are fully activated with improved carrier mobility after final annealing. Cathodoluminescence measurements show that the ultraviolet luminescence is much stronger than the unimplanted state. These findings also suggest that the electrical and optical properties of ZnO become much better by Al + implantation and subsequent annealing

Anodized ZnO nanostructures for photoelectrochemical water splitting

Energy Technology Data Exchange (ETDEWEB)

Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

2016-01-01

Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

Abdeslam DOUAYAR

2014-05-01

Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

Science.gov (United States)

Jiang, M.; Wang, D. D.; Chen, Z. Q.; Kimura, S.; Yamashita, Y.; Mori, A.; Uedono, A.

2013-01-01

Undoped ZnO single crystals were implanted with 300 keV Si+ ions to a dose of 6 × 1016 cm-2. A combination of X-ray diffraction (XRD), positron annihilation, Raman scattering, high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) was used to study the microstructure evolution after implantation and subsequent annealing. A very large increase of Doppler broadening S parameters in Si+-implanted region was detected by using a slow positron beam, indicating that vacancy clusters or microvoids are induced by implantation. The S parameters increase further after annealing up to 700 °C, suggesting agglomeration of these vacancies or microvoids to larger size. Most of these defects are removed after annealing up to 1100 °C. The other measurements such as XRD, Raman scattering, and PL all indicate severe damage and even disordered structure induced by Si+ implantation. The damage and disordered lattice shows recovery after annealing above 700 °C. Amorphous regions are observed by HRTEM measurement, directly testifies that amorphous phase is induced by Si+ implantation in ZnO. Analysis of the S - W correlation and the coincidence Doppler broadening spectra gives direct evidence of SiO2 precipitates in the sample annealed at 700 °C, which strongly supports the chemical effect of Si ions on the amorphization of ZnO lattice.

Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Aravind, Arun, E-mail: aruncusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Kumar, Mukesh; Chandra, Ramesh [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247 667, Uttarakhand (India)

2012-08-01

Highlights: Black-Right-Pointing-Pointer Defect induced Raman active modes in Mn doped ZnO thin films. Black-Right-Pointing-Pointer Room temperature ferromagnetism. Black-Right-Pointing-Pointer Morphological variations of ZnO thin films with Mn doping. Black-Right-Pointing-Pointer Variation of refractive index of ZnO thin films with Mn doping. - Abstract: Zn{sub 1-x}Mn{sub x}O thin films were grown by pulsed laser deposition. The phase purity and the structure were confirmed by X-ray diffraction studies. The films have a transmittance more than 80% in the visible region. The refractive index of Zn{sub 0.90}Mn{sub 0.10}O films is found to be 1.77 at 550 nm. The presence of non-polar E{sub 2}{sup high} and E{sub 2}{sup low} Raman modes in thin films indicates that 'Mn' doping does not change the wurtzite structure of ZnO. Apart from the normal modes of ZnO the Zn{sub 1-x}Mn{sub x}O ceramic targets show two additional modes at 332 cm{sup -1} (I{sub 1}) and 524 cm{sup -1} (I{sub 2}). The broad Raman peaks (340-600 cm{sup -1}) observed Zn{sub 0.90}Mn{sub 0.10}O thin films can be deconvoluted into five peaks, denoted as P{sub 1}-P{sub 5}. The possible origins of Raman peaks in Zn{sub 1-x}Mn{sub x}O films are the structural disorder and morphological change caused by the Mn dopant. The B{sub 1}{sup low}, {sup 2}B{sub 1}{sup low}, B{sub 1}{sup high} and A{sub 1}{sup LO} modes as well as the surface phonon mode have been observed in heavily Mn-doped ZnO films. Zn{sub 0.98}Mn{sub 0.02}O thin film shows room temperature ferromagnetism. The saturation magnetic moment of the Zn{sub 0.98}Mn{sub 0.02}O thin film is 0.42{mu}{sub B}/Mn atom. The undoped ZnO film prepared under the same condition shows diamagnetic nature. At higher doping concentrations the formation of Mn clusters suppress the room temperature ferromagnetism in Zn{sub 1-x}Mn{sub x}O thin films and shows paramagnetism. XPS confirms the incorporation of Mn{sup 2+} into the ZnO lattice.

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

Science.gov (United States)

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-01

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

Science.gov (United States)

Huang, B.

2016-07-01

We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

Directory of Open Access Journals (Sweden)

C. N. Ironside

2017-02-01

Full Text Available We report on atomic probe microscopy (APM of isotopically enriched ZnO nanorods that measures the spatial distribution of zinc isotopes in sections of ZnO nanorods for natural abundance natZnO and 64Zn and 66Zn enriched ZnO nanorods. The results demonstrate that APM can accurately quantify isotopic abundances within these nanoscale structures. Therefore the atom probe microscope is a useful tool for characterizing Zn isotopic heterostructures in ZnO. Isotopic heterostructures have been proposed for controlling thermal conductivity and also, combined with neutron transmutation doping, they could be key to a novel technology for producing p-n junctions in ZnO thin films and nanorods.

Activities towards p-type doping of ZnO

International Nuclear Information System (INIS)

Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

2011-01-01

Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

Activities towards p-type doping of ZnO

Energy Technology Data Exchange (ETDEWEB)

Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

2011-01-10

Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

Filament-induced luminescence and supercontinuum generation in undoped, Yb-doped, and Nd-doped YAG crystals

Science.gov (United States)

Kudarauskas, D.; Tamošauskas, G.; Vengris, M.; Dubietis, A.

2018-01-01

We present a comparative spectral study of filament-induced luminescence and supercontinuum generation in undoped, Yb-doped, and Nd-doped YAG crystals. We show that supercontinuum spectra generated by femtosecond filamentation in undoped and doped YAG crystals are essentially identical in terms of spectral extent. On the other hand, undoped and doped YAG crystals exhibit remarkably different filament-induced luminescence spectra whose qualitative features are independent of the excitation wavelength and provide information on the energy deposition to embedded dopants, impurities, and the crystal lattice itself. Our findings suggest that filament-induced luminescence may serve as a simple and non-destructive tool for spectroscopic studies in various transparent dielectric media.

Radiation damage in undoped CsI and CsI(Tl)

International Nuclear Information System (INIS)

Woody, C.L.; Kierstead, J.A.; Levy, P.W.; Stoll, S.

1992-01-01

Radiation damage has been studied in undoped CsI and CsI(TI) crystals using 60 Co gamma radiation for doses up to ∼ 4.2 x 10 6 . Samples from various manufacturers were measured ranging in size from 2.54 cm long cylinders to a 30 cm long block. Measurements were made on the change in optical transmission and scintillation light output as a function of dose. Although some samples showed a small change in transmission, a significant change in light output was observed for all samples. Recovery from damage was also studied as a function of time and exposure to UV light. A short lived phosphorescence was observed in undoped CsI, similar to the phosphorescence seen in CsI(TI)

Radiation hardness of undoped BGO crystals

International Nuclear Information System (INIS)

Sahu, S.K.; Peng, K.C.; Huang, H.C.; Wang, C.H.; Chang, Y.H.; Hou, W.S.; Ueno, K.; Chou, F.I.; Wei, Y.Y.

1997-01-01

We measured the radiation hardness of undoped BGO crystals from two different manufacturers. Such crystals are proposed to be used in a small-angle calorimeter of the BELLE detector of the KEK B-factory. Transparency and scintillation light output of the crystals were monitored to see the effect of radiation damage. The crystals show considerable radiation hardness up to 10.2 Mrad equivalent dose, which is much higher than the maximum expected dosage of 500 krad per year of running at BELLE. (orig.)

Undoped p-type GaN1-xSbx alloys: Effects of annealing

Science.gov (United States)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Effect of Al-doped on physical properties of ZnO Thin films grown by spray pyrolysis on SnO2: F/glass

Directory of Open Access Journals (Sweden)

Castagné M.

2012-06-01

Full Text Available Transparent conducting thin films of aluminum-doped zinc oxide (ZnO:Al have been deposited on SnO2:F/glass by the chemical spray technique, starting from zinc acetate (CH3CO22Zn.2H2O and aluminum chloride AlCl3. The effect of changing the aluminum-to-zinc ratio y from 0 to 3 at.%, has been thoroughly investigated. It was found that the optical and electrical properties of Al doped ZnO films improved with the addition of aluminum in the spray solution until y=2%. At this Al doping percentage, the thin layers have a resistivity equal to 4.1 × 10−4 Ω.cm and a transmittance of about 90 % in the region [600-1000] nm. XRD patterns confirm that the films have polycristalline nature and a wurtzite (hexagonal structure which characterized with (100, (002 and (101 principal orientations. The undoped films have (002 as the preferred orientation but Al doped ones have (101 as the preferred orientation. Beyond y= 1%, peak intensities decrease considerably.

Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Karaagac, Hakan, E-mail: hkaraagac@ucdavis.edu [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States); Yengel, Emre; Saif Islam, M. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States)

2012-04-25

Highlights: Black-Right-Pointing-Pointer Undoped and Al doped ZnO (AZO) thin films were successfully prepared using sol-gel technique. Black-Right-Pointing-Pointer Structural analysis has revealed that Al doping has a significant influence on preferential orientation. Black-Right-Pointing-Pointer It has been observed that wrinkles forms on the surface of films when annealed with a fast heat ramp up rate. Black-Right-Pointing-Pointer Optical analysis has revealed that that the band gap energy of ZnO thin film increases with increasing Al doping concentration. Black-Right-Pointing-Pointer The lowest resistivity is observed for 1% Al ZnO thin film, which is 2.2 Multiplication-Sign 10{sup -2} ({Omega} cm). - Abstract: ZnO and some of its ternary wide-bandgap alloys offer interesting opportunities for designing materials with tunable band gaps, strong piezoresistivity and controlled electrical conductance with high optical transparency. Synthesizing these materials on arbitrary substrates using low-cost and unconventional techniques can help in integrating semiconductors with different physical, electrical, and optical characteristics on a single substrate for heterogeneous integration of multifunctional devices. Here we report the successful synthesis of aluminum (Al) doped ZnO (AZO) thin films on soda-lime glass, silicon and fluorine doped tin oxide (FTO) pre-coated glass substrates by using sol-gel deposition method at ambient condition. X-ray diffraction (XRD) analysis revealed that varying degree of Al doping significantly impacts the crystal orientation, semiconductor bandgap and optical transparency of the film. Crystal structure of the film is also found to be strongly correlated to the characteristics of the substrate material. The impact of heating rate during post annealing process is studied and optimized in order to improve the surface morphology of the deposited films. Optical characterizations have revealed that bandgap energy of AZO films can be tuned

Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

Directory of Open Access Journals (Sweden)

Shuhan Jing

2015-04-01

Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei

2009-03-11

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films

International Nuclear Information System (INIS)

Garnier, Jerome; Bouteville, Anne; Hamilton, Jeff; Pemble, Martyn E.; Povey, Ian M.

2009-01-01

Two different methods of spray chemical vapour deposition have been used to grow ZnO thin films on glass substrates from zinc acetate solution over the temperature range 400 o C to 550 o C. The first of these is named InfraRed Assisted Spray Chemical Vapour Deposition (IRAS-CVD). This method uses intense IR radiation to heat not only the substrate but also the gaseous species entering the reactor. The second method is a more conventional approach known simply as ultrasonic spray CVD, which utilises IR lamps to heat the substrate only. By way of comparing these two approaches we present data obtained from contact angle measurements, crystallinity and mean crystallite size, photoluminescence, electrical and optical properties. Additionally we have examined the role of annealing within the IRAS-CVD reactor environment.

Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

Science.gov (United States)

Tewari, S.; Ghosh, A.; Bhattacharjee, A.

2016-11-01

Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

CBE growth of high-quality ZnO epitaxial layers

Energy Technology Data Exchange (ETDEWEB)

El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

2006-03-15

Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Nanosheet-Assembled ZnO Microflower Photocatalysts

Directory of Open Access Journals (Sweden)

Siwen Zhang

2014-01-01

Full Text Available Large scale ZnO microflowers assembled by numerous nanosheets are synthesized through a facile and effective hydrothermal route. The structure and morphology of the resultant products are characterized by X-ray diffraction (XRD and scanning electron microscope (SEM. Photocatalytic properties of the as-synthesized products are also investigated. The results demonstrate that eosin red aqueous solution can be degraded over 97% after 110 min under UV light irradiation. In addition, methyl orange (MO and Congo red (CR aqueous solution degradation experiments also are conducted in the same condition, respectively. It showed that nanosheet-assembled ZnO microflowers represent high photocatalytic activities with a degradation efficiency of 91% for CR with 90 min of irradiation and 90% for MO with 60 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

Influence Al doped ZnO nanostructure on structural and optical properties

International Nuclear Information System (INIS)

Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

2016-01-01

The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

Microwave absorption properties and mechanism of cagelike ZnO /SiO2 nanocomposites

Science.gov (United States)

Cao, Mao-Sheng; Shi, Xiao-Ling; Fang, Xiao-Yong; Jin, Hai-Bo; Hou, Zhi-Ling; Zhou, Wei; Chen, Yu-Jin

2007-11-01

In this paper, cagelike ZnO /SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2-12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO /SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.

Vacuum-annealing induced enhancements in the transparent conducting properties of Mo  +  F doped ZnO thin films

Science.gov (United States)

Dineshbabu, N.; Ravichandran, K.

2017-09-01

The decisive aim of the present study is to enhance the transparent conducting properties of Mo  +  F co-doped ZnO films through annealing. In this work, Mo  +  F co-doped ZnO (MFZO) films were deposited on glass substrates at a deposition temperature of 350 °C using a home-made nebulizer spray pyrolysis technique and the prepared samples were annealed under air and vacuum atmosphere at 400 °C for 2 h. The structural, electrical, optical, surface morphological and elemental properties of as-deposited, air-annealed and vacuum-annealed samples were compared using various analytical techniques. The vacuum-annealed sample shows lowest resistivity of 1.364  ×  10-3 Ω cm and high transmittance of 90% in the visible region with high ohmic conducting nature. The optical bandgap of the sample was found to be increased to 3.36 eV after vacuum annealing treatment. The XRD patterns of the films confirmed the polycrystalline nature. The PL measurements show the defect levels of the deposited films. The FESEM and AFM studies show an increase in the grain size and roughness of the films, respectively, after vacuum-annealing treatment. The presence of the elements before and after annealing treatment was confirmed using XPS analysis.

Intensity dependence and transient dynamics of donor-acceptor pair recombination in ZnO thin films grown on (001) silicon

Science.gov (United States)

Guo, Bing; Qiu, Z. R.; Wong, K. S.

2003-04-01

We report room-temperature time-integrated and time-resolved photoluminescence (PL) measurements on a nominally undoped wurtzite ZnO thin film grown on (001) silicon. A linear and sublinear excitation intensity Iex dependence of the PL intensity were observed for the 379.48-nm exciton line and the weak broad green band (˜510 nm), respectively. The green luminescence was found to decay as hyperbolic t-1, and its peak energy was observed to increase nearly logarithmically with increased Iex. These results are in an excellent agreement with the tunnel-assisted donor-deep-acceptor pair (DAP) model so that its large blueshifts of about 25 meV per decade increase in Iex can be accounted for by the screening of the fluctuating impurity potential. Also, the 30-ps fast decay of the exciton emission was attributed to the rapid trapping of carriers at luminescent impurities, while the short lifetime of τ1/e=200 ps for the green luminescence may be due to an alternative trapping by deeper centers in the ZnO. Finally, singly ionized oxygen and zinc vacancies have been tentatively invoked to act as donor-deep-acceptor candidates for the DAP luminescence, respectively.

MOVPE growth and characterisation of ZnO properties for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Oleynik, N.

2007-03-07

In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied

Structural, optical and morphological studies of undoped and Zn ...

Indian Academy of Sciences (India)

CdSe QDs via aqueous route synthesis. N THIRUGNANAM and D GOVINDARAJAN. ∗. Department of Physics, Annamalai University, Annamalai Nagar 608 002, India. MS received 10 June 2015; accepted 10 May 2016. Abstract. Undoped and Zn-doped CdSe quantum dots (QDs) were successfully synthesized by the ...

Electrical properties of ZnO nanorods and layers

Energy Technology Data Exchange (ETDEWEB)

Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

2007-07-01

ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

Preparation and characterization of antimicrobial Ce-doped ZnO nanoparticles for photocatalytic detoxification of cyanide

International Nuclear Information System (INIS)

Karunakaran, Chockalingam; Gomathisankar, Paramasivan; Manikandan, Govindasamy

2010-01-01

2% Ce-doped ZnO, prepared by sonochemical wet impregnation method and calcined at 500 deg. C, was characterized by XRD, EDS, XPS, SEM, FT-IR, UV-visible DRS, PL, EIS, and N 2 -adsorption and desorption isotherms. Doping reduces the intragranular resistance and recombination of the photogenerated electron-hole pairs. It also shifts the optical absorption edge to visible region. Under UV-A light or natural sunlight (950 ± 25 W m -2 ), the doped oxide effectively catalyzes the oxidation of cyanide and subsequently the cyanate also. The catalysis follows Langmuir-Hinshelwood kinetics. The solar photocatalysis depends on the area of catalyst bed and the UV photocatalysis enhances with the photon flux. The doped oxide is also an antibacterial agent and its bactericidal efficiency, tested with Escherichia coli in absence of any illumination, is larger than those of undoped oxides.

Enhancing the numerical aperture of lenses using ZnO nanostructure-based turbid media

International Nuclear Information System (INIS)

Khokhra, Richa; Barman, Partha Bir; Kumar, Rajesh; Kumar, Manoj; Rawat, Nitin; Jang, Hwanchol; Lee, Heung-No

2013-01-01

Nanosheets, nanoparticles, and microstructures of ZnO were synthesized via a wet chemical method. ZnO films with a thickness of 44–46 μm were fabricated by spray coating, and these have been investigated for their potential use in turbid lens applications. A morphology-dependent comparative study of the transmittance of ZnO turbid films was conducted. Furthermore, these ZnO turbid films were used to enhance the numerical aperture (NA) of a Nikon objective lens. The variation in NA with different morphologies was explained using size-dependent scattering by the fabricated films. A maximum NA of around 1.971 of the objective lens with a turbid film of ZnO nanosheets was achieved. (paper)

High efficient ZnO nanowalnuts photocatalyst: A case study

Energy Technology Data Exchange (ETDEWEB)

Yan, Feng [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Zhang, Siwen; Liu, Yang [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Liu, Hongfeng [School of Basic Medical Sciences, Mudanjiang Medical University, Mudanjiang 157011 (China); Qu, Fengyu [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Cai, Xue, E-mail: xuecai@mail.sdu.edu.cn [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); Wu, Xiang, E-mail: wuxiang@hrbnu.edu.cn [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China)

2014-11-15

Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

High efficient ZnO nanowalnuts photocatalyst: A case study

International Nuclear Information System (INIS)

Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

2014-01-01

Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment

Graphene-wrapped ZnO nanospheres as a photocatalyst for high performance photocatalysis

International Nuclear Information System (INIS)

Chen, Da; Wang, Dongfang; Ge, Qisheng; Ping, Guangxing; Fan, Meiqiang; Qin, Laishun; Bai, Liqun; Lv, Chunju; Shu, Kangying

2015-01-01

In this work, graphene-wrapped ZnO nanospheres (ZnO–graphene nanocomposites) were prepared by a simple facile lyophilization method, followed by thermal treatment process. ZnO nanospheres with the size of about 100–400 nm, composed of numerous nanocrystals with hexagonal wurtzite structure, were well separated from each other and wrapped with transparent graphene sheets. Compared to ZnO nanospheres, the ZnO–graphene nanocomposites showed a significant enhancement in the photodegradation of methylene blue. This enhanced photocatalytic activity could be attributed to their favorable dye-adsorption affinity and increased optical absorption as well as the efficient charge transfer of the photogenerated electrons in the conduction band of ZnO to graphene. Thus, this work could provide a facile and low-cost method for the development of graphene-based nanocomposites with promising applications in photocatalysis, solar energy conversion, sensing, and so on. - Highlights: • Graphene-wrapped ZnO nanospheres were prepared by a facile lyophilization method. • ZnO nanospheres were separated from each other and wrapped with 2D graphene sheets. • Graphene-wrapped ZnO nanospheres exhibited superior photocatalytic activities. • The photocatalytic mechanisms of graphene-wrapped ZnO nanospheres were discussed

Graphene-wrapped ZnO nanospheres as a photocatalyst for high performance photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Chen, Da, E-mail: dchen_80@hotmail.com [College of Materials Science & Engineering, China Jiliang University, Hangzhou 310018 (China); Wang, Dongfang; Ge, Qisheng; Ping, Guangxing [College of Materials Science & Engineering, China Jiliang University, Hangzhou 310018 (China); Fan, Meiqiang, E-mail: fanmeiqiang@126.com [College of Materials Science & Engineering, China Jiliang University, Hangzhou 310018 (China); Qin, Laishun [College of Materials Science & Engineering, China Jiliang University, Hangzhou 310018 (China); Bai, Liqun [School of Sciences, Zhejiang Agriculture and Forestry University, Hangzhou 311300 (China); Lv, Chunju; Shu, Kangying [College of Materials Science & Engineering, China Jiliang University, Hangzhou 310018 (China)

2015-01-01

In this work, graphene-wrapped ZnO nanospheres (ZnO–graphene nanocomposites) were prepared by a simple facile lyophilization method, followed by thermal treatment process. ZnO nanospheres with the size of about 100–400 nm, composed of numerous nanocrystals with hexagonal wurtzite structure, were well separated from each other and wrapped with transparent graphene sheets. Compared to ZnO nanospheres, the ZnO–graphene nanocomposites showed a significant enhancement in the photodegradation of methylene blue. This enhanced photocatalytic activity could be attributed to their favorable dye-adsorption affinity and increased optical absorption as well as the efficient charge transfer of the photogenerated electrons in the conduction band of ZnO to graphene. Thus, this work could provide a facile and low-cost method for the development of graphene-based nanocomposites with promising applications in photocatalysis, solar energy conversion, sensing, and so on. - Highlights: • Graphene-wrapped ZnO nanospheres were prepared by a facile lyophilization method. • ZnO nanospheres were separated from each other and wrapped with 2D graphene sheets. • Graphene-wrapped ZnO nanospheres exhibited superior photocatalytic activities. • The photocatalytic mechanisms of graphene-wrapped ZnO nanospheres were discussed.

ZnO and Al doped ZnO thin films deposited by Spray Plasma: Effect of the growth time and Al doping on microstructural, optical and electrical properties

International Nuclear Information System (INIS)

Baba, Kamal; Lazzaroni, Claudia; Nikravech, Mehrdad

2015-01-01

Nanostructured zinc oxide (ZnO) and Al doped ZnO (ZnO:Al) thin films are deposited on glass substrate by the Spray Plasma technique. Zinc nitrate and aluminium nitrate are used as Zn and Al precursors, respectively. The effect of the growth time on structural and optical properties of undoped films is studied by X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy. The effect of Al doping on microstructural, optical and electrical characteristics of ZnO:Al films is also investigated. The results show that the grain size and the film thickness both increase with the growth time. The band gap of the layers varies from 3.17 to 3.24 eV depending on the thickness. The increase of the Al doping results in the enlargement of the peak (002) and the shift of its position to higher 2θ values. Average optical transmittance decreases from 90 to 65% with the growth time because of the thickness increase while there is no significant influence of the aluminium doping on the transmittance which is above 80% in most of the visible and near-IR range for all ZnO:Al films. The electrical properties characterized by Hall measurements show that all the deposited films exhibit high resistivity, between 4 and 10 4 Ω cm. The carrier concentration decreases from 2.10 19 to 2.10 13 cm −3 when the concentration of Al increases from 1.5 to 5 atm%. - Highlights: • The original Spray Plasma technique is used for ZnO and ZnO:Al thin film deposition. • Investigation of the effect of growth time and Al doping on the structural and optical properties • Increase of grain size and film thickness with the growth time • Optical transmittance decreases from 90 to 65% with the growth time and is above 80% for ZnO:Al films in UV–Vis-NIR range. • The peak position of the (002) plane is shifted to high 2θ values with Al doping.

Preparation, characterization of Sb-doped ZnO nanocrystals and their excellent solar light driven photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Nasser, Ramzi; Othmen, Walid Ben Haj [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

2017-01-30

Highlights: • Sb-ZnO was obtained by modified sol-gel method using citric acid as stabilizing agent. • Sb incorporated both in lattice and interstitial sites. • The formation of (Sb{sub Zn}–2 V{sub Zn}) acceptor level was revealed by photoluminescence studies. • Optimum Sb content to show higher photocatalytic activity was found to be 3%. - Abstract: In the present study, undoped and antimony (Sb) doped ZnO nanocrystals (NCs) were prepared by a simple and economical sol-gel method. X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed the purity of the obtained phase and its high crystallinity. Raman analysis confirms the hexagonal Wurtzite ZnO structure. According to the diffuse reflectance results, the band gap was found to decrease up to 3% of Sb doping (ZSb3 sample). The results of X-ray photoelectron spectroscopy (XPS) measurements reveal that Sb ions occupied both Zn and interstitials sites. The successful substitution of antimony in ZnO lattice suggests the formation of the complex (Sb{sub Zn}–2 V{sub Zn}) acceptor level above the valence band. Particularly for ZSb3 sample, the UV photoluminescence (PL) band presents an obvious red-shift attributed to the formation of this complex. Rhodamine B (RhB) was used to evaluate the photocatalytic activity of Sb-doped ZnO NCs under sunlight irradiation. It was found that oxygen vacancies play a major role in the photocatalytic process by trapping the excited electrons and inhibiting the radiative recombination. During the photocatalytic mechanism, the Sb doping, expressed through the apparition of the (Sb{sub Zn}–2 V{sub Zn}) correspondent acceptor level, enhances the sunlight absorption within the ZnO band gap, which stimulates the generation of hydroxyl radicals and promotes the photocatalytics reaction rates. Such important contribution of the hydroxyl radicals was confirmed experimentally when using ethanol as scavenger in the photocatalytic reaction. The photodegradation

Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

Energy Technology Data Exchange (ETDEWEB)

Kriisa, Merike; Kärber, Erki [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, Malle, E-mail: malle.krunks@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, Valdek [Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Unt, Tarmo; Kukk, Mart; Mere, Arvo [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2014-03-31

The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10{sup −2} Ω cm mainly due to low carrier mobility of 1.5 cm{sup 2}/Vs, the carrier concentration is 10{sup 20} cm{sup −3}. - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light.

Carrier transport mechanisms of hybrid ZnO nanorod-polymer LEDs

International Nuclear Information System (INIS)

Cho, Sungjae; Lee, Kyuseung; Son, Dongick; Oh, Youngjei; Choi, Wonkook; Angadi, Basavaraj

2014-01-01

A hybrid polymer-nanorod (NR) light-emitting diode (LED), consisting of a hole-conducting polymer poly (9-vinyl carbazole) (PVK) and ZnO nanorod (NR) composite, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/(PVK + ZnO nanorods)/Al is fabricated through a simple spin coating technique. TEM images shows inhomogeneous deposition and the agglomeration of ZnO NRs, which is explained through their low probability of adsorption on PVK due to two-dimensional structural property. In the current-voltage characteristics, negative differential resistance (NDR) phenomenon is observed corresponding to device structure without ZnO NRs. The carrier transport behavior in the LED device is well described by both ohmic and space-charge-limited-current (SCLC) mechanisms. Broad blue electroluminescence (EL) consisting of two sub peaks, are centered at 441 nm and the other at 495 nm, is observed, which indicates that the ZnO nanorod play a role as a recombination center for excitons. The red shift in the position of the EL compared to that photoluminescence is well explained through band offsets at the heterojunction between the PVK and ZnO NRs.

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

International Nuclear Information System (INIS)

Sepulveda-Guzman, S.; Reeja-Jayan, B.; De la Rosa, E.; Ortiz-Mendez, U.; Reyes-Betanzo, C.; Cruz-Silva, R.; Jose-Yacaman, M.

2010-01-01

In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

Energy Technology Data Exchange (ETDEWEB)

Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reeja-Jayan, B. [Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States); De la Rosa, E. [Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico); Ortiz-Mendez, U. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reyes-Betanzo, C. [Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico); Cruz-Silva, R. [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico); Jose-Yacaman, M. [Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)

2010-03-15

In this work patterned ZnO films were prepared at room-temperature by deposition of {approx}5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation ({lambda} = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

Synthesis of Vertically Aligned ZnO Nano rods on Various Substrates

International Nuclear Information System (INIS)

Hassan, J.J.; Hassan, Z.; Abu Hassan, H.; Mahdi, M.A.

2011-01-01

We successfully synthesized vertically aligned ZnO nano rods on Si, GaN, Sic, Al 2 O 3 , ITO, and quartz substrates using microwave assisted chemical bath deposition (MA-CBD) method. All these types of substrates were seeded with PVA-ZnO nano composites layer prior to the nano rods growth. The effect of substrate type on the morphology of the ZnO nano rods was studied. The diameter of grown ZnO nano rods ranged from 50 nm to 200 nm. Structural quality and morphology of ZnO nano rods were determined by x-ray diffraction and scanning electron microscopy, which revealed hexagonal wurtzite structures perpendicular to the substrate along the z-axis in the direction of (002). Photoluminescence measurements of grown ZnO nano rods on all substrates exhibited high UV peak intensity. Raman scattering studies were conducted to estimate the lattice vibration modes. (author)

Influence of lithium doping on the structural and electrical characteristics of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Johny, T. Anto [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Kumar, Viswanathan, E-mail: vkumar10@yahoo.com [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Imai, Hideyuki; Kanno, Isaku [Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan)

2012-06-30

Thin films of undoped and lithium-doped Zinc oxide, (Zn{sub 1-x}Li{sub x})O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO{sub 2}/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x {<=} 0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e{sub 31}{sup Low-Asterisk} has been determined for the thin films having the composition (Zn{sub 0.95}Li{sub 0.05})O, to study their suitability for piezoelectric applications. - Highlights: Black-Right-Pointing-Pointer Preferentially c-axis oriented (Zn{sub 1-x}Li{sub x})O films were spin-coated on glass. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films exhibit dense columnar microstructure. Black-Right-Pointing-Pointer Low levels of lithium doping, increases the electrical resistivity of ZnO thin films. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films show high values of transverse piezoelectric coefficient, e{sup Low-Asterisk }{sub 31}.

Dielectric properties of solution-grown-undoped and acrylic-acid ...

Indian Academy of Sciences (India)

Dielectric capacities and losses were measured, in the temperature (50–170°C) and frequency (01–100 kHz range), for undoped and acrylic acid (AA) doped ethyl cellulose (EC) films (thickness about 20 m) with progressive increase in the concentration of dopant in the polymer matrix. The variation of capacity with ...

Quantum corrections to temperature dependent electrical conductivity of ZnO thin films degenerately doped with Si

International Nuclear Information System (INIS)

Das, Amit K.; Ajimsha, R. S.; Kukreja, L. M.

2014-01-01

ZnO thin films degenerately doped with Si (Si x Zn 1−x O) in the concentrations range of ∼0.5% to 5.8% were grown by sequential pulsed laser deposition on sapphire substrates at 400 °C. The temperature dependent resistivity measurements in the range from 300 to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the 0.5%, 3.8%, and 5.8% doped Si x Zn 1−x O films in the entire temperature range. On the contrary, the Si x Zn 1−x O films with Si concentrations of 1.0%, 1.7%, and 2.0% showed a transition from negative to positive TCR with increasing temperature. These observations were explained using weak localization based quantum corrections to conductivity

Optimization of CVD parameters for long ZnO NWs grown on ITO

Indian Academy of Sciences (India)

The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

Photoluminescence and lasing properties of ZnO nanorods

International Nuclear Information System (INIS)

Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

2010-01-01

In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

Ultraviolet sensing properties of polyvinyl alcohol-coated aluminium ...

Indian Academy of Sciences (India)

Undoped and aluminium (Al)-doped zinc oxide (ZnO) nanorods have been synthesized by electrochemical route. The synthesized materials have been characterized by X-ray diffraction, UV–visible spectrometer and scanning electron microscope. The Al-doped ZnO nanorods have been coated with polyvinyl alcohol.

Synthesis, characterization and evaluation of biological activities of ...

African Journals Online (AJOL)

Purpose: To synthesize, characterize and investigate the antimicrobial properties of pure and manganese-doped zinc oxide nanoparticles. Method: Un-doped and manganese-doped zinc oxide (Mn-doped ZnO) nanoparticles were prepared using co-precipitation method. The synthesized Mn-doped ZnO nanoparticles were ...

Transparent conducting oxide nanotubes

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

2014-09-01

Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

Acceptor Type Vacancy Complexes In As-Grown ZnO

International Nuclear Information System (INIS)

Zubiaga, A.; Tuomisto, F.; Zuniga-Perez, J.

2010-01-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li Zn and Na Zn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Acceptor Type Vacancy Complexes In As-Grown ZnO

Science.gov (United States)

Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

2010-11-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Growth of vertically aligned ZnO nanorods using textured ZnO films

Directory of Open Access Journals (Sweden)

Meléndrez Manuel

2011-01-01

Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

2014-07-01

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method

International Nuclear Information System (INIS)

Fang, F; Futter, J; Markwitz, A; Kennedy, J

2009-01-01

The UV and humidity sensing properties of ZnO nanorods prepared by arc discharge have been studied. Scanning electron microscopy and photoluminescence spectroscopy were carried out to analyze the morphology and optical properties of the as-synthesized ZnO nanorods. Proton induced x-ray emission was used to probe the impurities in the ZnO nanorods. A large quantity of high purity ZnO nanorod structures were obtained with lengths of 0.5-1 μm. The diameters of the as-synthesized ZnO nanorods were found to be between 40 and 400 nm. The nanorods interlace with each other, forming 3D networks which make them suitable for sensing application. The addition of a polymeric film-forming agent (BASF LUVISKOL VA 64) improved the conductivity, as it facilitates the construction of conducting networks. Ultrasonication helped to separate the ZnO nanorods and disperse them evenly through the polymeric agent. Improved photoconductivity was measured for a ZnO nanorod sensor annealed in air at 200 deg. C for 30 min. The ZnO nanorod sensors showed a UV-sensitive photoconduction, where the photocurrent increased by nearly four orders of magnitude from 2.7 x 10 -10 to 1.0 x 10 -6 A at 18 V under 340 nm UV illumination. High humidity sensitivity and good stability were also measured. The resistance of the ZnO nanorod sensor decreased almost linearly with increasing relative humidity (RH). The resistance of the ZnO nanorods changed by approximately five orders of magnitude from 4.35 x 10 11 Ω in dry air (7% RH) to about 4.95 x 10 6 Ω in 95% RH air. It is experimentally demonstrated that ZnO nanorods obtained by the arc discharge method show excellent performance and promise for applications in both UV and humidity sensors.

Decreased Dissolution of ZnO by Iron Doping Yields Nanoparticles with Reduced Toxicity in the Rodent Lung and Zebrafish Embryos

Science.gov (United States)

Xia, Tian; Zhao, Yan; Sager, Tina; George, Saji; Pokhrel, Suman; Li, Ning; Schoenfeld, David; Meng, Huan; Lin, Sijie; Wang, Xiang; Wang, Meiying; Ji, Zhaoxia; Zink, Jeffrey I.; Mädler, Lutz; Castranova, Vincent; Lin, Shuo; Nel, Andre E.

2014-01-01

We have recently shown that the dissolution of ZnO nanoparticles and Zn2+ shedding leads to a series of sub-lethal and lethal toxicological responses at cellular level that can be alleviated by iron-doping. Iron-doping changes the particle matrix and slows the rate of particle dissolution. To determine whether iron doping of ZnO also leads to lesser toxic effects in vivo, toxicity studies were performed in rodent and zebrafish models. First, we synthesized a fresh batch of ZnO nanoparticles doped with 1–10 wt % of Fe. These particles were extensively characterized to confirm their doping status, reduced rate of dissolution in an exposure medium and reduced toxicity in a cellular screen. Subsequent studies compared the effects of undoped to doped particles in the rat lung, mouse lung and the zebrafish embryo. The zebrafish studies looked at embryo hatching and mortality rates as well as the generation of morphological defects, while the endpoints in the rodent lung included an assessment of inflammatory cell infiltrates, LDH release and cytokine levels in the bronchoalveolar lavage fluid. Iron doping, similar to the effect of the metal chelator, DTPA, interfered in the inhibitory effects of Zn2+ on zebrafish hatching. In the oropharyngeal aspiration model in the mouse, iron doping was associated with decreased polymorphonuclear cell counts and IL-6 mRNA production. Doped particles also elicited decreased heme oxygenase 1 expression in the murine lung. In the intratracheal instillation studies in the rat, Fe-doping was associated with decreased polymorphonuclear cell counts, LDH and albumin levels. All considered, the above data show that Fe-doping is a possible safe design strategy for preventing ZnO toxicity in animals and the environment. PMID:21250651

Sodium doping in ZnO crystals

Science.gov (United States)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

Structural and optical characterization of indium-antimony complexes in ZnO

Energy Technology Data Exchange (ETDEWEB)

Türker, M.; Deicher, M., E-mail: manfred.deicher@tech-phys.uni-sb.de; Johnston, K.; Wolf, H.; Wichert, Th. [Universität des Saarlandes, Experimentalphysik (Germany)

2015-04-15

One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable p-type doping of ZnO with group V elements (N, P, As, Sb) acting as acceptors located on O lattice sites. The theoretically proposed concepts of cluster-doping or codoping may lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor {sup 111}In and the group-V acceptor Sb. The formation of In-Sb pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one Sb acceptor. These results has been complemented by photoluminescence measurements.

Modeling flux pinning in thin undoped and BazRo3-doped YBCO films

DEFF Research Database (Denmark)

Paturi, P.; Irjala, M.; Huhtinen, H.

2009-01-01

A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the Jc properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of Jc(B,T) curves of the films, when the pinning site distributions...... are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the Jc properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant...

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2016-04-30

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

2016-01-01

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Pre-patterned ZnO nanoribbons on soft substrates for stretchable energy harvesting applications

Science.gov (United States)

Ma, Teng; Wang, Yong; Tang, Rui; Yu, Hongyu; Jiang, Hanqing

2013-05-01

Three pre-patterned ZnO nanoribbons in different configurations were studied in this paper, including (a) straight ZnO nanoribbons uniformly bonded on soft substrates that form sinusoidal buckles, (b) straight ZnO nanoribbons selectively bonded on soft substrates that form pop-up buckles, and (c) serpentine ZnO nanoribbons bonded on soft substrates via anchors. The nonlinear dynamics and random analysis were conducted to obtain the fundamental frequencies and to evaluate their performance in energy harvesting applications. We found that pop-up buckles and overhanging serpentine structures are suitable for audio frequency energy harvesting applications. Remarkably, almost unchanged fundamental natural frequency upon strain is achieved by properly patterning ZnO nanoribbons, which initiates a new and exciting direction of stretchable energy harvesting using nano-scale materials in audio frequency range.

First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

International Nuclear Information System (INIS)

Dominguez, A.; Lorke, M.; Rosa, A. L.; Frauenheim, Th.; Schoenhalz, A. L.; Dalpian, G. M.; Rocha, A. R.

2014-01-01

We report on density functional theory investigations of the electronic properties of monofunctional ligands adsorbed on ZnO-(1010) surfaces and ZnO nanowires using semi-local and hybrid exchange-correlation functionals. We consider three anchor groups, namely thiol, amino, and carboxyl groups. Our results indicate that neither the carboxyl nor the amino group modify the transport and conductivity properties of ZnO. In contrast, the modification of the ZnO surface and nanostructure with thiol leads to insertion of molecular states in the band gap, thus suggesting that functionalization with this moiety may customize the optical properties of ZnO nanomaterials.

Local transport properties, morphology and microstructure of ZnO decorated SiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Van Nostrand, Joseph E [Air Force Research Laboratory, Information Directorate, Rome, NY (United States); Cortez, Rebecca [Union College, Schenectady, NY (United States); Rice, Zachary P; Cady, Nathaniel C; Bergkvist, Magnus, E-mail: Joseph.VanNostrand@rl.af.mil [Albany College of Nanoscale Science and Engineering, Albany, NY (United States)

2010-10-15

We report on a novel, surfactant free method for achieving nanocrystalline ZnO decoration of an SiO{sub 2} nanoparticle at ambient temperature. The size distributions of the naked and decorated SiO{sub 2} nanoparticles are measured by means of dynamic light scattering, and a monodisperse distribution is observed for each. The morphology and microstructure of the nanoparticles are explored using atomic force microscopy and high resolution transmission electron microscopy. Investigation of the optical properties of the ZnO decorated SiO{sub 2} nanoparticles shows absorption at 350 nm. This blue shift in absorption as compared to bulk ZnO is shown to be consistent with quantum confinement effects due to the small size of the ZnO nanocrystals. Finally, the local electronic transport properties of the nanoparticles are explored by scanning conductance atomic force microscopy. A memristive hysteresis in the transport properties of the individual ZnO decorated SiO{sub 2} nanoparticles is observed. Optical absorption measurements suggest the presence of oxygen vacancies, whose migration and annihilation appear to contribute to the dynamic conduction properties of the ZnO decorated nanoparticles. We believe this to be the first demonstration of a ZnO decorated SiO{sub 2} nanoparticle, and this represents a simple yet powerful way of achieving the optical and electrical properties of ZnO in combination with the simplicity of SiO{sub 2} synthesis.

Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

International Nuclear Information System (INIS)

Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

2015-01-01

Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230 S/cm, which is ∼6× more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3 mm radius cylinder. As an example application, the authors fabricate an “all-fiber” pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50 g/cm 2 ), yielding a ∼10 6 × current change under 200 g/cm 2 . This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics

Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

Directory of Open Access Journals (Sweden)

Zhimin GUO

2016-02-01

Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

Cyclic voltammetry response of an undoped CVD diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Fabisiak, K., E-mail: kfab@ukw.edu.pl [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Torz-Piotrowska, R. [Faculty of Chemical Technology and Engineering, UTLS Seminaryjna 3, 85-326 Bydgoszcz (Poland); Staryga, E. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland); Szybowicz, M. [Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Paprocki, K.; Popielarski, P.; Bylicki, F. [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Wrzyszczynski, A. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Correlation was found between diamond quality and its electrochemical performance. Black-Right-Pointing-Pointer The electrode sensitivity depends on the content of sp{sup 2} carbon phase in diamond layer. Black-Right-Pointing-Pointer The sp{sup 2} carbon phase content has little influence on the CV peak separation ({Delta}E{sub p}). - Abstract: The polycrystalline undoped diamond layers were deposited on tungsten wire substrates by using hot filament chemical vapor deposition (HFCVD) technique. As a working gas the mixture of methanol in excess of hydrogen was used. The morphologies and quality of as-deposited films were monitored by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy respectively. The electrochemical activity of the obtained diamond layers was monitored by using cyclic voltammetry measurements. Analysis of the ferrocyanide-ferricyanide couple at undoped diamond electrode suggests that electrochemical reaction at diamond electrode has a quasireversibile character. The ratio of the anodic and cathodic peak currents was always close to unity. In this work we showed that the amorphous carbon admixture in the CVD diamond layer has a crucial influence on its electrochemical performance.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

Science.gov (United States)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

Energy Technology Data Exchange (ETDEWEB)

Son, Hyo-Soo; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)

2016-10-15

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

International Nuclear Information System (INIS)

He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

2010-01-01

A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

International Nuclear Information System (INIS)

Wu, Jyh Ming; Tsay, Li-Yi

2015-01-01

We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

Solvothermal synthesis and electrical conductivity model for the zinc oxide-insulated oil nanofluid

International Nuclear Information System (INIS)

Shen, L.P.; Wang, H.; Dong, M.; Ma, Z.C.; Wang, H.B.

2012-01-01

A new kind of nanofluid, ZnO-insulated oil nanofluid was prepared from ZnO nanoparticles synthesized by solvothermal method. Electrical property measurement shows that the electrical conductivity increases by 973 times after adding 0.75% volumetric fraction of ZnO nanoparticles into the insulated oil. A linear dependence of the electrical conductivity on the volumetric fraction has been observed, while the temperature dependence of the electrical conductivity reveals a nonlinear relationship. An electrical conductivity model is established for the nanofluid by considering both the Brownian motion and electrophoresis of the ZnO nanoparticles. -- Highlights: ► Stable ZnO-insulated oil nanofluid was successfully prepared. ► The electrical conductivity of the ZnO nanofluid is investigated. ► A new model is established to explain the electrical properties of the nanofluid.

Sodium doping in ZnO crystals

International Nuclear Information System (INIS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

Optimization of processing parameters on the controlled growth of c-axis oriented ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Malek, M. F., E-mail: mfmalek07@gmail.com; Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: hafiz-030@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Musa, M. Z., E-mail: musa948@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Pulau Pinang, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang (Malaysia); Saurdi, I., E-mail: saurdy788@gmail.com; Ishak, A., E-mail: ishak@sarawak.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Sarawak, Kampus Kota Samarahan, Jalan Meranek, 94300 Kota Samarahan, Sarawak (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia)

2016-07-06

Optimization of the growth time parameter was conducted to synthesize high-quality c-axis ZnO nanorod arrays. The effects of the parameter on the crystal growth and properties were systematically investigated. Our studies confirmed that the growth time influence the properties of ZnO nanorods where the crystallite size of the structures was increased at higher deposition time. Field emission scanning electron microsope analysis confirmed the morphologies structure of the ZnO nanorods. The ZnO nanostructures prepared under the optimized growth conditions showed an intense XRD peak which reveal a higher c-axis oriented ZnO nanorod arrays thus demonstrating the formation of defect free structure.

Characterization of structural and electrical properties of ZnO tetrapods

Science.gov (United States)

Gu, Yu-Dong; Mai, Wen-Jie; Jiang, Peng

2011-12-01

ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace. Structural characterization was carried out by transmission electron microscopy (TEM) and select-area electron diffraction (SAED), which shows the presence of zinc blende nucleus in the center of tetrapods while the four branches taking hexagonal wurtzite structure. The electrical transport property of ZnO tetrapods was investigated through an in-situ nanoprobe system. The three branches of a tetrapod serve as source, drain, and "gate", respectively; while the fourth branch pointing upward works as the force trigger by vertically applying external force downward. The conductivity of each branch of ZnO-tetrapods increases 3-4 times under pressure. In such situation, the electrical current through the branches of ZnO tetrapods can be tuned by external force, and therefore a simple force sensor based on ZnO tetrapods has been demonstrated for the first time.

Fabrication of ZnO Nanostructures with Self-cleaning Functionality

International Nuclear Information System (INIS)

Kok, K.Y.; Ng, I.K.; Nur Ubaidah Saidin; Bustaman, F.K.A.

2011-01-01

The science of biomimicry has served as a fusion point between nature and technology where one could adopt natures best solution for humans use. Lotus leaf surface, for example, possesses self cleaning capability due to its unique physical and chemical properties. In this work, we aimed to mimic these features on glass surface using ZnO nanostructures to achieve the self-cleaning functionality. A series of ZnO films were electrochemically deposited on indium-doped tin oxide (ITO) conducting glasses from different aqueous electrolytes at systematically varied deposition potentials and electrolyte conditions. The surface morphology, density, orientation and aspect ratio of the ZnO micro/nanostructures obtained were characterized using X-ray diffraction and scanning electron microscopy. Results from these studies show that lower electrolyte concentrations tend to favor one-dimensional growth of ZnO nanostructures that self-assembled into nano flowers at higher deposition temperatures. This hierarchical micro/nano-structured ZnO-modified surface exhibits super hydrophobicity with water contact angle as high as 170 degree. (author)

Dynamics of the deep-level emission in ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

2010-07-01

Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

Effect of annealing on electrical properties of plasmatron deposited ZnO films

International Nuclear Information System (INIS)

Joa, Sang Beom; Penkov, Oteksiy V.; Plaksin, Vadim Yu; Mansur, Rakib; Kim, Ji Hun; Lee, Heon Ju

2009-01-01

Transparent conductive zinc oxide (ZnO) has been extensively studied in recent several years because they have very interesting properties. Besides this, zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technology like RF sputtering, pyrolysis and metal-organic CVD don't completely satisfy the industrial requirements. In our previous publications the new perspective ZnO deposition technology based DC Arc Plasmatron was described. This technology has several advantages (low cost, high deposition rate, low substrate temperature). Currently, films deposited using this technology has can be used only as protective or insulation coatings because of very high resistance. Applying of plasmatron technology in the microelectronics or solar cell production requires the improvement of electrical properties of the films. This can be achieved by optimization of deposition parameters, using of doping, or by post-deposition treatment such as annealing, or by combination of mentioned. It was shown that proposed technology can be used for the deposition of pure ZnO film with good electrical and optical properties. Proposed technology has several disadvantages which can be overcome in the near-term outlook

Vanadium substitution: A simple and economic way to improve UV sensing in ZnO

Science.gov (United States)

Srivastava, Tulika; Bajpai, Gaurav; Rathore, Gyanendra; Liu, Shun Wei; Biring, Sajal; Sen, Somaditya

2018-04-01

The UV sensing in pure ZnO is due to oxygen adsorption/desorption process from the ZnO surface. Vanadium doping improves the UV sensitivity of ZnO. The enhancement in UV sensitivity in vanadium-substituted ZnO is attributed to trapping and de-trapping of electrons at V4+ and V5+-related defect states. The V4+ state has an extra electron than the V5+ state. A V4+ to V5+ transformation happens with excitation of this electron to the conduction band, while a reverse trapping process liberates a visible light. An analytic study of response phenomenon reveals this trapping and de-trapping process.

Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

International Nuclear Information System (INIS)

Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

2011-01-01

Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

A flexible UV nanosensor based on reduced graphene oxide decorated ZnO nanostructures

Science.gov (United States)

Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Muhammad, Safdar; Huang, Ying; He, Jun

2012-03-01

A low-cost, compatible with flexible electronics, high performance UV sensor has been achieved from a reduced graphene oxide (RGO) decorated hydrangea-like ZnO film on a PDMS substrate. The hydrangea-like ZnO UV sensor has the best UV sensing performance among devices made of three kinds of ZnO nanostructures synthesized by a hydrothermal method, and demonstrated a dramatic enhancement in on/off ratio and photoresponse current by introducing an appropriate weight ratio of RGO. The on/off ratio of the 0.05% RGO/ZnO sensor increases almost one order of magnitude compared to that of a pristine hydrangea-like ZnO UV sensor. While for the 5% RGO decorated ZnO sensor, the photoresponse current reaches as high as ~1 μA and exceeds 700 times that of a ZnO UV sensor. These results indicate that RGO is an appropriate material to enhance the performance of ZnO nanostructure UV sensors based on its unique features, especially the high optical transparency and excellent electronic conductivity. Our findings will make RGO/ZnO nanohybrids extraordinarily promising in optoelectronics, flexible electronics and sensor applications.

ZnO nanorod biosensor for highly sensitive detection of specific protein binding

International Nuclear Information System (INIS)

Kim, Jin Suk; Park, Won Il; Lee, Chul Ho; Yi, Gyu Chul

2006-01-01

We report on the fabrication of electrical biosensors based on functionalized ZnO nanorod surfaces with biotin for highly sensitive detection of biological molecules. Due to the clean interface and easy surface modification, the ZnO nanorod sensors can easily detect streptavidin binding down to a concentration of 25 nM, which is more sensitive than previously reported one-dimensional (1D) nanostructure electrical biosensors. In addition, the unique device structure with a micrometer-scale hole at the center of the ZnO nanorod's conducting channel reduces the leakage current from the aqueous solution, hence enhancing device sensitivity. Moreover, ZnO nanorod field-effect-transistor (FET) sensors may open up opportunities to create many other oxide nanorod electrical sensors for highly sensitive and selective real-time detection of a wide variety of biomolecules.

Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

Science.gov (United States)

Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

2013-05-01

Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

Energy Technology Data Exchange (ETDEWEB)

Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

2015-05-15

ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

Science.gov (United States)

Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

2013-04-07

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

Effect of cerium oxide addition on electrical properties of ZnO

Energy Technology Data Exchange (ETDEWEB)

Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

2002-07-01

Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

Alpha particle response for a prototype radiation survey meter based on poly(ethylene terephthalate) with un-doping fluorescent guest molecules

International Nuclear Information System (INIS)

Nguyen, Philip; Nakamura, Hidehito; Sato, Nobuhiro; Takahashi, Tomoyuki; Maki, Daisuke; Kanayama, Masaya; Takahashi, Sentaro; Kitamura, Hisashi; Shirakawa, Yoshiyuki

2016-01-01

There is no radiation survey meter that can discriminate among alpha particles, beta particles, and gamma-rays with one material. Previously, undoped poly(ethylene terephthalate) (PET) has been shown to be an effective material for beta particle and gamma-ray detection. Here, we demonstrate a prototype survey meter for alpha particles based on undoped PET. A 140 × 72 × 1-mm PET substrate was fabricated with mirrored surfaces. It was incorporated in a unique detection section of the survey meter that directly detects alpha particles. The prototype exhibited an unambiguous response to alpha particles from a 241 Am radioactive source. These results demonstrate that undoped PET can perform well in survey meters for alpha particle detection. Overall, the PET-based survey meter has the potential to detect multiple types of radiation, and will spawn an unprecedented type of radiation survey meter based on undoped aromatic ring polymers. (author)

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

Science.gov (United States)

Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

Optical and structural properties of undoped and Mn2+ doped Ca–Li hydroxyapatite nanopowders using mechanochemical synthesis

International Nuclear Information System (INIS)

Ravindranadh, K.; Babu, B.; Pushpa Manjari, V.; Thirumala Rao, G.; Rao, M.C.; Ravikumar, R.V.S.S.N.

2015-01-01

Undoped and Mn 2+ doped calcium–lithium hydroxyapatite (CLHA) nanopowders were prepared by mechanochemical synthesis. The prepared samples were characterized by powder X-ray diffraction, scanning electron microscope, transmission electron microscope, optical absorption, photoluminescence, electron paramagnetic resonance and FT-IR spectroscopy techniques. From powder XRD pattern, lattice cell parameters and average crystallite sizes were evaluated. The morphologies of prepared samples were analyzed by using SEM and TEM studies. Optical and EPR data confirmed that the doped Mn 2+ enter into the host material as distorted octahedral site. Photoluminescence spectra of undoped and Mn 2+ doped CLHA nanopowders exhibited blue, blue-green emission bands at 425, 443, 468 nm and green, strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for undoped and Mn 2+ doped CLHA nanopowders. Vibrational bands related to phosphate molecules, P–O–H and hydroxyl ions are observed in FT-IR spectra. - Highlights: • PXRD pattern of prepared undoped and Mn 2+ doped CLHA nanopowders are in nanosize. • Optical and EPR studies reveal site symmetry of Mn 2+ doped CLHA nanopowders are distorted octahedral symmetry. • FT-IR spectra exhibits the various vibrational modes of phosphate ions, P–O–H and water molecules

Solution precursor plasma deposition of nanostructured ZnO coatings

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2011-01-01

Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Solution precursor plasma deposition of nanostructured ZnO coatings

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

2011-08-15

Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Room temperature synthesis and optical properties of small diameter (5 nm) ZnO nanorod arrays.

Science.gov (United States)

Cho, Seungho; Jang, Ji-Wook; Lee, Jae Sung; Lee, Kun-Hong

2010-10-01

We report a simple wet-chemical synthesis of ∼5 nm diameter ZnO nanorod arrays at room temperature (20 °C) and normal atmospheric pressure (1 atm) and their optical properties. They were single crystalline in nature, and grew in the [001] direction. These small diameter ZnO nanorod arrays can also be synthesized at 0 °C. Control experiments were also conducted. On the basis of the results, we propose a mechanism for the spontaneous growth of the small diameter ZnO structures. The optical properties of the 5 nm diameter ZnO nanorod arrays synthesized using this method were probed by UV-Visible diffuse reflectance spectroscopy. A clear blue-shift, relative to the absorption band from 50 nm diameter ZnO nanorod arrays, was attributed to the quantum confinement effects caused by the small nanocrystal size in the 5 nm diameter ZnO nanorods.

Undoped and doped poly(tetraphenylbenzidine) as sensitive material for an impedimetric nitrogen dioxide gas dosimeter

Energy Technology Data Exchange (ETDEWEB)

Marr, I.; Moos, R., E-mail: functional.materials@uni-bayreuth.de [Department of Functional Materials, University of Bayreuth, Bayreuth 95440 (Germany); Neumann, K.; Thelakkat, M. [Department of Macromolecular Chemistry I, Applied Functional Polymers, University of Bayreuth, Bayreuth 95440 (Germany)

2014-09-29

This article presents a nitrogen dioxide (NO{sub 2}) detecting gas dosimeter based on poly(tetraphenylbenzidine) poly(TPD) as nitrogen oxide (NO{sub x}) sensitive layer. Gas dosimeters are suitable devices to determine reliably low levels of analytes over a long period of time. During NO{sub x} exposure, the analyte molecules are accumulated irreversibly in the sensing layer of the dosimeter enhancing the conductivity of the hole conducting poly(TPD), which can be measured by impedance spectroscopy. Due to their possibility for low cost production by simple printing techniques and very good physical, photochemical, and electrochemical properties, poly(TPD)s are suitable for application in gas dosimeters operated at room temperature. We studied the effect of doping with a Co(III)-complex in combination with a conducting salt on the dosimeter behavior. Compared to the undoped material, a strong influence of the doping can be observed: the conductivity of the sensing material increases significantly, the noise of the signal decreases and an unwanted recovery of the sensor signal can be prevented, leading to a NO{sub x} detection limit <10 ppm.

Sodium doping in ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

2015-01-12

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

Carbon doped ZnO: Synthesis, characterization and interpretation

International Nuclear Information System (INIS)

Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

2013-01-01

A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

Science.gov (United States)

Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

2018-03-01

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

Science.gov (United States)

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

2013-09-30

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

Directory of Open Access Journals (Sweden)

Anees A. Ansari

2013-09-01

Full Text Available In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

Influence of thickness and coatings morphology in the antimicrobial performance of zinc oxide coatings

Energy Technology Data Exchange (ETDEWEB)

Carvalho, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Sampaio, P. [CBMA, University of Minho, Campus de Gualtar, 4700 Braga (Portugal); Azevedo, S. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Vaz, C. [CBMA, University of Minho, Campus de Gualtar, 4700 Braga (Portugal); Espinós, J.P. [Instituto de Ciencia de Materiales de Sevilla, CSIC-University of Sevilla, Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Teixeira, V., E-mail: vasco@fisica.uminho.pt [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Carneiro, J.O., E-mail: carneiro@fisica.uminho.pt [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal)

2014-07-01

In this research work, the production of undoped and silver (Ag) doped zinc oxide (ZnO) thin films for food-packaging applications were developed. The main goal was to determine the influence of coatings morphology and thickness on the antimicrobial performance of the produced samples. The ZnO based thin films were deposited on PET (Polyethylene terephthalate) substrates by means of DC reactive magnetron sputtering. The thin films were characterized by optical spectroscopy, X-Ray Diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Scanning Electron Microscopy (SEM). The antimicrobial performance of the undoped and Ag-doped ZnO thin films was also evaluated. The results attained have shown that all the deposited zinc oxide and Ag-doped ZnO coatings present columnar morphology with V-shaped columns. The increase of ZnO coatings thickness until 200 nm increases the active surface area of the columns. The thinner samples (50 and 100 nm) present a less pronounced antibacterial activity than the thickest ones (200–600 nm). Regarding Ag-doped ZnO thin films, it was verified that increasing the silver content decreases the growth rate of Escherichia coli and decreases the amount of bacteria cells present at the end of the experiment.

Electronic Structure and Optical Properties of Co and Fe doped ZnO

Directory of Open Access Journals (Sweden)

Li Chunping

2016-01-01

Full Text Available First-principle ultrasoft pseudo potential approach of the plane wave based on density functional theory has been used for studying the electronic characterization and optical properties of ZnO and Fe, Co doped ZnO. The results show that the doping impurities change the lattice parameters a little, but bring more changes in the electronic structures. The band gaps are broadened by doping. And the Fermi level accesses to the conduction band which will lead the system to show the character of metallic properties. The dielectric function and absorption peaks are identified and the changes compared to pure ZnO are analyzed in detail.

Pressurized polyol synthesis of Al-doped ZnO nanoclusters with high electrical conductivity and low near-infrared transmittance

Energy Technology Data Exchange (ETDEWEB)

Lee, Ho-Nyun; Shin, Chi-Ho [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of); Hwang, Duck Kun [Department of Corporate Diagnosis, Small and Medium Business Corporation, Seoul 150-718 (Korea, Republic of); Kim, Haekyoung [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Oh, Kyeongseok [Department of Chemical and Environmental Technology, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Hyun-Jong, E-mail: hjkim23@kitech.re.kr [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of)

2015-09-25

Highlights: • Low-temperature pressurized polyol method synthesized Al-doped ZnO nanoclusters. • Reaction time affected the doping efficiency, resistivity, and NIR transmittance. • The near-IR blocking efficiency of Al-doped ZnO (AZO) nanoclusters reached 85%. • AZO nanocluster coatings could be used for heat reflectors or artificial glasses. - Abstract: In this study, a novel pressurized polyol method is proposed to synthesize aluminum-doped ZnO (AZO) nanoclusters without utilizing additional thermal treatment to avoid the merging of nanoclusters. The size of the AZO nanoclusters range from 100 to 150 nm with a resistivity of 204 Ω cm. The AZO nanoclusters primarily consist of approximately 10-nm nanocrystals that form a spherically clustered morphology. A two-stage growth model has been proposed based on the results of scanning electron microscopy and transmission electron microscopy images, nanocluster sizes, and X-ray diffraction patterns. The primary AZO nanocrystals first nucleate under pressurized conditions and then spontaneously aggregate into larger nanoclusters. Optically, the AZO nanoclusters exhibit a significant decrease in the near-infrared (NIR) transmittance compared to pure ZnO nanoparticles. The NIR blocking efficiency of AZO nanoclusters reached 85%. Moreover, the doping efficiency, resistivity, and NIR transmittance of AZO nanoclusters are influenced by the reaction time in the pressurized polyol solution. On the other hand, the reaction time has no effect on the particle size and crystallinity. An optically transparent coating for the AZO nanoclusters, which consisted of iso-propanol solvent and ultraviolet-curable acrylic binder, was also demonstrated.

Zinc accumulation and synthesis of ZnO nanoparticles using Physalis alkekengi L

International Nuclear Information System (INIS)

Qu Jiao; Yuan Xing; Wang Xinhong; Shao Peng

2011-01-01

A field survey and greenhouse experiments were conducted using Physalis alkekengi L. to investigate strategies of phytoremediation. In addition, ZnO nanoparticles were synthesized using P. alkekengi. P. alkekengi plants grew healthily at Zn levels from 50 to 5000 mg kg -1 in soils. The plants incorporated Zn into their aerial parts (with mean dry weight values of 235-10,980 mg kg -1 ) and accumulated biomass (with a mean dry weight of 25.7 g plant -1 ) during 12 weeks. The synthesized ZnO nanoparticles showed a polydisperse behavior and had a mean size of 72.5 nm. The results indicate that P. alkekengi could be used for the remediation of zinc-contaminated soils. Moreover, the synthetic method of synthesizing ZnO nanoparticles from Zn hyperaccumulator plants constitutes a new insight into the recycling of metals in plant sources. - Highlights: → P. alkekengi plants were used to remediate the Zn-contaminated soils. → Zn in P. alkekengi plants were used as a material to synthesize ZnO nanoparticles. → P. alkekengi plants absorbed large amounts of Zn from soils into its aerial parts. → The synthesized ZnO nanoparticles were not uniform. → The mean size of synthesized ZnO nanoparticles was 72.5 nm. - ZnO nanoparticles were synthesized using P. alkekengi plants, which absorbed large amounts of Zn from contaminated soils.

Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

Directory of Open Access Journals (Sweden)

Shiuh-Chuan HER

2015-11-01

Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

Zinc accumulation and synthesis of ZnO nanoparticles using Physalis alkekengi L

Energy Technology Data Exchange (ETDEWEB)

Qu Jiao, E-mail: qujiao@bhu.edu.cn [School of Urban and Environmental Sciences, Northeast Normal University, No. 5268 Renmin street, Changchun 130024 (China); Yuan Xing, E-mail: yuanx@nenu.edu.cn [School of Urban and Environmental Sciences, Northeast Normal University, No. 5268 Renmin street, Changchun 130024 (China); Wang Xinhong; Shao Peng [School of Urban and Environmental Sciences, Northeast Normal University, No. 5268 Renmin street, Changchun 130024 (China)

2011-07-15

A field survey and greenhouse experiments were conducted using Physalis alkekengi L. to investigate strategies of phytoremediation. In addition, ZnO nanoparticles were synthesized using P. alkekengi. P. alkekengi plants grew healthily at Zn levels from 50 to 5000 mg kg{sup -1} in soils. The plants incorporated Zn into their aerial parts (with mean dry weight values of 235-10,980 mg kg{sup -1}) and accumulated biomass (with a mean dry weight of 25.7 g plant{sup -1}) during 12 weeks. The synthesized ZnO nanoparticles showed a polydisperse behavior and had a mean size of 72.5 nm. The results indicate that P. alkekengi could be used for the remediation of zinc-contaminated soils. Moreover, the synthetic method of synthesizing ZnO nanoparticles from Zn hyperaccumulator plants constitutes a new insight into the recycling of metals in plant sources. - Highlights: > P. alkekengi plants were used to remediate the Zn-contaminated soils. > Zn in P. alkekengi plants were used as a material to synthesize ZnO nanoparticles. > P. alkekengi plants absorbed large amounts of Zn from soils into its aerial parts. > The synthesized ZnO nanoparticles were not uniform. > The mean size of synthesized ZnO nanoparticles was 72.5 nm. - ZnO nanoparticles were synthesized using P. alkekengi plants, which absorbed large amounts of Zn from contaminated soils.

Sensitive measurement of nonlinear absorption and optical limiting in undoped and Fe-doped ZnO quantum dots using pulsed laser

Science.gov (United States)

Sharma, D.; Malik, B. P.; Gaur, A.

2016-11-01

Zinc oxide quantum dots (QDs) with Fe-doping at different concentrations were prepared by chemical co-precipitation method. The prepared QDs were characterized by UV-Vis spectroscopy, X-ray diffraction and Z-scan technique. The sizes of QDs were found to be within 4.6-6.6 nm range. The nonlinear parameters viz. two-photon absorption coefficient (βTPA) and two-photon absorption cross-section (σTPA) were extracted with the help of open aperture Z-scan technique using nanosecond Nd:YAG laser operating at wavelength 532 nm. Higher values of βTPA and σTPA for Fe doped ZnO implied that they were potential materials for development of photonics devices and sensor protection applications. Fe doped sample (3 % by wt) was found to be the best optical limiter with limiting threshold intensity of 0.64 TW/cm2.

Studies on phosphorescence and trapping effects of Mn-doped and undoped zinc germinates

Energy Technology Data Exchange (ETDEWEB)

He, Zhiyi [Optoelectronic Institute, Guilin University of Electronic Technology, Guilin 541004, Guangxi (China); Department of Physics, Georgia Southern University, Statesboro, GA 30460 (United States); Ma, Li [Department of Physics, Georgia Southern University, Statesboro, GA 30460 (United States); Wang, Xiaojun, E-mail: xwang@georgiasouthern.edu [Department of Physics, Georgia Southern University, Statesboro, GA 30460 (United States); School of Physics, Northeast Normal University, Changchun 130024 (China)

2016-01-15

Photoluminescence and phosphorescence from different recombining centers in the Mn{sup 2+}-doped and undoped Zn{sub 2}GeO{sub 4} phosphors have been observed. By UV excitation the undoped sample presents a broad band of blue–white emission from the host defects while the Mn-doped samples show both the host and Mn{sup 2+} emissions with different phosphorescent durations. At the beginning of UV excitation after the phosphorescence has been exhausted, the fluorescent time dependence of Mn{sup 2+} exhibits a fast decay process to a constant intensity, different from the rising or charging process as the typical behavior for the common persistent phosphors. This unusual behavior was studied using electron paramagnetic resonance (EPR) spectroscopy. A decrease of the EPR signal from Mn{sup 2+} was found for the sample under UV irradiation, suggesting the occurrence of ionization of Mn{sup 2+} to Mn{sup 3+}. A slow recovering process of the ionization has also been detected, which is consistent with the observation of phosphorescence from Mn{sup 2+} doped samples. - Highlights: • Photoluminescence and phosphorescence observed from Mn{sup 2+}-doped and undoped Zn{sub 2}GeO{sub 4}. • Unusual charging process from the common phosphors observed and analyzed. • Photo-stimulated EPR with a slow recovering process of Mn{sup 2+} ionization observed.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

Science.gov (United States)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Soluble Supercapacitors: Large and Reversible Charge Storage in Colloidal Iron-Doped ZnO Nanocrystals.

Science.gov (United States)

Brozek, Carl K; Zhou, Dongming; Liu, Hongbin; Li, Xiaosong; Kittilstved, Kevin R; Gamelin, Daniel R

2018-05-09

Colloidal ZnO semiconductor nanocrystals have previously been shown to accumulate multiple delocalized conduction-band electrons under chemical, electrochemical, or photochemical reducing conditions, leading to emergent semimetallic characteristics such as quantum plasmon resonances and raising prospects for application in multielectron redox transformations. Here, we demonstrate a dramatic enhancement in the capacitance of colloidal ZnO nanocrystals through aliovalent Fe 3+ -doping. Very high areal and volumetric capacitances (33 μF cm -2 , 233 F cm -3 ) are achieved in Zn 0.99 Fe 0.01 O nanocrystals that rival those of the best supercapacitors used in commercial energy-storage devices. The redox properties of these nanocrystals are probed by potentiometric titration and optical spectroscopy. These data indicate an equilibrium between electron localization by Fe 3+ dopants and electron delocalization within the ZnO conduction band, allowing facile reversible charge storage and removal. As "soluble supercapacitors", colloidal iron-doped ZnO nanocrystals constitute a promising class of solution-processable electronic materials with large charge-storage capacity attractive for future energy-storage applications.

Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

2005-02-01

One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

Science.gov (United States)

Atanov, N.; Baranov, V.; Budagov, J.; Davydov, Yu. I.; Glagolev, V.; Tereshchenko, V.; Usubov, Z.; Cervelli, F.; Di Falco, S.; Donati, S.; Morescalchi, L.; Pedreschi, E.; Pezzullo, G.; Raffaelli, F.; Spinella, F.; Colao, F.; Cordelli, M.; Corradi, G.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Happacher, F.; Martini, M.; Miscetti, S.; Ricci, M.; Saputi, A.; Sarra, I.; Echenard, B.; Hitlin, D. G.; Hu, C.; Miyashita, T.; Porter, F.; Zhang, L.; Zhu, R.-Y.; Grancagnolo, F.; Tassielli, G.; Murat, P.

2018-02-01

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeV measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.

Studies on the adsorption of RuN{sub 3} dye on sheet-like nanostructured porous ZnO films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Rong; Pan, Jie; Briggs, Evan P.; Thrash, Marvin; Kerr, Lei L. [Department of Paper and Chemical Engineering, Miami University, Oxford, OH 45056 (United States)

2008-04-15

The interface between the ZnO and dye directly impacts the dye-sensitized solar cell (DSSC) performance. Nanostructured porous ZnO film was developed by a simple chemical solution process. Scanning electron microscope (SEM) images demonstrated the uniform ZnO films with sheet-like nanostructure. Adsorption studies indicated that the maximum adsorption capacity of RuN{sub 3} dye on the surface of ZnO films was approximately 0.016 mmol RuN{sub 3}/g ZnO films. Adsorption studies were conducted at 25 and 40 C. The results showed that the dye adsorption was significantly influenced by temperatures. Moreover, the problem of the dye aggregation on the ZnO surface was reduced at higher adsorption temperatures. The adsorption chemistry was studied with Raman spectroscopy. (author)

Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

KAUST Repository

Khim, Dongyoon

2017-03-15

This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

KAUST Repository

Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

2017-01-01

This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

Synthesis and characterization of nanocomposites ZnO / polypyrrole for anti corrosive application

International Nuclear Information System (INIS)

Valenca, D.P.; Bouchonneau, N.; Vieira, M.R.S.; Alves, K.G.B.; Melo, C.P. de; Urtiga Filho, S.L.

2014-01-01

Nanoparticles of metal oxides and conductive polymers have been investigated as alternative additives in corrosion protection of oxidizable metals. In this hybrid nanocomposites work Polypyrrole-ZnO were synthesized and characterized as a potential application as industrial paint anti corrosive additive. The different steps of the synthesis and characterization of nanocomposites are described. The nanocomposites were obtained from the emulsion polymerization of aqueous solutions of pyrrole and sodium dodecyl sulfate containing ZnO nanoparticles dispersed in the mass. The nanoparticles were characterized by scanning electron microscopy and transmission, dynamic light scattering, diffraction of X-rays and techniques of infrared spectroscopy. From the characterization techniques, it was possible to determine the average size of nanoparticles of ZnO and ZnO-Polypyrrole. The peaks in the diffraction pattern of X-rays observed in the nanocomposite were the same as in ZnO, confirming the presence of ZnO in the composite. (author)

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

Energy Technology Data Exchange (ETDEWEB)

Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

2013-01-15

Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate

International Nuclear Information System (INIS)

Xia Cao; Wang Ning; Wang Long

2010-01-01

Bundled wurtzite zinc oxide (ZnO) nanowires were fabricated in a facile manner on an ITO-conducting substrate via a microemulsion route without using any hard template or external electric/magnetic field. Structure and properties of the as-prepared ZnO electrode were investigated using scanning electron microscopy, X-ray diffraction, photoluminescence, Raman spectroscopy, as well as electrochemical tests. The ZnO electrode shows excellent optical and electrocatalytic ability, which may find further applications such as optoelectronics or as sensors as well as other modern industrial areas.

Crystallinity improvement of ZnO nanorods by optimization of low-cost electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Özdal, Teoman, E-mail: teomanozdal@hotmail.com; Taktakoğlu, Renna; Özdamar, Havva; Esen, Mehmet; Takçı, Deniz Kadir; Kavak, Hamide

2015-10-01

Extremely low-cost electrodeposition technique was developed to deposit ZnO nanorods. The growth process was performed using standard DC power supply, milliammeter and two-electrode electrochemical cell. The deposition was carried out on indium tin oxide (ITO) coated glass substrates by changing deposition parameters such as cathodic deposition current and time, solution molarity and temperature. The parameters varied to obtain optimum transparent semiconductor material for optoelectronic applications. Structural characterizations by X-ray diffraction (XRD) indicate the formation of polycrystalline phase ZnO with strong c-axis orientation and were sensitive to deposition temperatures and molarity as well. Average optical transmittance for the best two ZnO nanorod series was around 60% and 42%, respectively. The optical energy band gap of the ZnO nanorods decreased from 3.24 eV to 3.21 eV as the deposition time increased. All the nanorods were n-type with a high carrier concentration of 1 × 10{sup 20} cm{sup −3} and low 1–2 × 10{sup −3} Ωcm resistivity. - Highlights: • n-Type ZnO nanorods were electrochemically deposited employing standard DC power supply and milliammeter. • ZnO nanorods show very good polycrystalline and electrical properties consistent with the literature. • ZnO nanorod structures are hexagonal wurtzite and highly oriented along the c-axis perpendicular to the substrates. • Produced ZnO nanorod structures show good transparent conductive oxide properties.

Simulation of pure and defective wurtzite-type ZnO

Energy Technology Data Exchange (ETDEWEB)

Maldonado, Frank; Stashans, Arvids [Grupo de FisicoquImica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)], E-mail: arvids@utpl.edu.ec

2009-12-15

Changes in the structural and electronic properties of zinc oxide (ZnO) due to the O vacancy and F-centre were studied using a semi-empirical quantum-chemical approach based on Hartree-Fock theory. A periodic supercell of 128 atoms was exploited throughout the study. The semi-empirical parameters for the Zn atom are obtained by reproducing the main properties of the ZnO crystal as well as the first three ionization potentials of the Zn atom. The perturbation imposed by the defect leads to atomic relaxation, which is computed and discussed in detail. It is found that electron density redistribution in the vicinity of defects plays an important role in the determination of atomic movements. The introduction of an oxygen vacancy generates a local one-electron energy level placed below the conduction band while the presence of an F-centre produces a local energy level just above the upper valence band of the material. The deep situation of the local energy level corresponding to the F-centre implies that the F-centre cannot serve as a source of unintentional n-type electrical conductivity in ZnO. Changes in the chemical bonding are observed, showing that it becomes slightly more covalent because of oxygen-vacancy-type defects.

Simulation of pure and defective wurtzite-type ZnO

International Nuclear Information System (INIS)

Maldonado, Frank; Stashans, Arvids

2009-01-01

Changes in the structural and electronic properties of zinc oxide (ZnO) due to the O vacancy and F-centre were studied using a semi-empirical quantum-chemical approach based on Hartree-Fock theory. A periodic supercell of 128 atoms was exploited throughout the study. The semi-empirical parameters for the Zn atom are obtained by reproducing the main properties of the ZnO crystal as well as the first three ionization potentials of the Zn atom. The perturbation imposed by the defect leads to atomic relaxation, which is computed and discussed in detail. It is found that electron density redistribution in the vicinity of defects plays an important role in the determination of atomic movements. The introduction of an oxygen vacancy generates a local one-electron energy level placed below the conduction band while the presence of an F-centre produces a local energy level just above the upper valence band of the material. The deep situation of the local energy level corresponding to the F-centre implies that the F-centre cannot serve as a source of unintentional n-type electrical conductivity in ZnO. Changes in the chemical bonding are observed, showing that it becomes slightly more covalent because of oxygen-vacancy-type defects.

Determination of chemical state of Al doping element in ZnO layer

International Nuclear Information System (INIS)

Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

2011-01-01

Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

Can visible light impact litter decomposition under pollution of ZnO nanoparticles?

Science.gov (United States)

Du, Jingjing; Zhang, Yuyan; Liu, Lina; Qv, Mingxiang; Lv, Yanna; Yin, Yifei; Zhou, Yinfei; Cui, Minghui; Zhu, Yanfeng; Zhang, Hongzhong

2017-11-01

ZnO nanoparticles is one of the most used materials in a wide range including antibacterial coating, electronic device, and personal care products. With the development of nanotechnology, ecotoxicology of ZnO nanoparticles has been received increasing attention. To assess the phototoxicity of ZnO nanoparticles in aquatic ecosystem, microcosm experiments were conducted on Populus nigra L. leaf litter decomposition under combined effect of ZnO nanoparticles and visible light radiation. Litter decomposition rate, pH value, extracellular enzyme activity, as well as the relative contributions of fungal community to litter decomposition were studied. Results showed that long-term exposure to ZnO nanoparticles and visible light led to a significant decrease in litter decomposition rate (0.26 m -1 vs 0.45 m -1 ), and visible light would increase the inhibitory effect (0.24 m -1 ), which caused significant decrease in pH value of litter cultures, fungal sporulation rate, as well as most extracellular enzyme activities. The phototoxicity of ZnO nanoparticles also showed impacts on fungal community composition, especially on the genus of Varicosporium, whose abundance was significantly and positively related to decomposition rate. In conclusion, our study provides the evidence for negatively effects of ZnO NPs photocatalysis on ecological process of litter decomposition and highlights the contribution of visible light radiation to nanoparticles toxicity in freshwater ecosystems. Copyright © 2017 Elsevier Ltd. All rights reserved.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

Science.gov (United States)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

International Nuclear Information System (INIS)

Shandilya, Swati; Sreenivas, K; Gupta, Vinay; Tomar, Monika

2009-01-01

Highly c-axis oriented LiNbO 3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO 3 films under the optimized deposition condition. An extra peak at 905 cm -1 was observed in the Raman spectra of LiNbO 3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO 3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO 3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO 3 film and the Al : ZnO layer.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Aqueous chemical growth and patterning of ZnO nanopillars on different substrate materials

Energy Technology Data Exchange (ETDEWEB)

Kreye, M.; Postels, B.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Institute of Applied Physics, Technical University of Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig (Germany)

2006-03-15

Aqueous chemical growth (ACG) is a low-temperature approach that is only weakly influenced by the substrate and allows for the growth of ZnO nanopillars on various substrates. ACG is an efficient way to generate wafer-scale and densely packed arrays of ZnO nanopillars even on polymer materials. Photoluminescence (PL) characterisation clearly shows a comparatively strong band-edge luminescence even at room temperature that is accompanied with a rather weak visible luminescence in the yellow/orange spectral range. We introduce a rather simple postgrowth lithographic technique. Patterning of ZnO nanopillars even on layered conducting and flexible substrate materials using ACG as a low-temperature growth technique is demonstrated. The economical potential for future applications and devices using ZnO nanopillar arrays is discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals

International Nuclear Information System (INIS)

Martovitsky, V. P.

2006-01-01

Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-A-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

Science.gov (United States)

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-08-19

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Zafar Hussain Ibupoto

2013-08-01

Full Text Available Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD and field emission scanning electron microscopy (FESEM techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002 peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Piezoelectric and optoelectronic properties of electrospinning hybrid PVDF and ZnO nanofibers

Science.gov (United States)

Ma, Jian; Zhang, Qian; Lin, Kabin; Zhou, Lei; Ni, Zhonghua

2018-03-01

Polyvinylidene fluoride (PVDF) is a unique ferroelectric polymer with significant promise for energy harvesting, data storage, and sensing applications. ZnO is a wide direct band gap semiconductor (3.37 eV), commonly used as ultraviolet photodetectors, nanoelectronics, photonicsand piezoelectric generators. In this study, we produced high output piezoelectric energy harvesting materials using hybrid PVDF/ZnO nanofibers deposited via electrospinning. The strong electric fields and stretching forces during the electrospinning process helps to align dipoles in the nanofiber crystal such that the nonpolar α-phase (random orientation of dipoles) is transformed into polar β-phase in produced nanofibers. The effect of the additional ZnO nanowires on the nanofiber β-phase composition and output voltage are investigated. The maximum output voltage generated by a single hybrid PVDF and ZnO nanofiber (33 wt% ZnO nanowires) is over 300% of the voltage produced by a single nanofiber made of pure PVDF. The ZnO NWs served not only as a piezoelectric material, but also as a semiconducting material. The electrical conductivity of the hybrid PVDF/ZnO nanofibers increased by more than a factor of 4 when exposed under ultraviolet (UV) light.

DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

2016-07-01

Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

Electrical conductivity of (La,Sr)MnO3

International Nuclear Information System (INIS)

Nowotny, J.; Rekas, M.; Sorrell, C.C.

1998-01-01

Defect disorder model for undoped and Sr-doped LaMnO 3 was derived from non-stoichiometry data reported in literature. This model is checked against the electrical conductivity data. The regimes corresponding to oxygen deficit and oxygen excess will be discussed. A good agreement between the random defect model and experimental data of the electrical conductivity was revealed. Copyright (1998) Australasian Ceramic Society

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

International Nuclear Information System (INIS)

Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.

2011-01-01

Arsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3 As 2 and ZnO-Zn 3 As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of ∼10 17 cm -3 and mobility of ∼8 cm 2 V -1 s -1 were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn -2V Zn shallow acceptor complex and removes the compensating hydrogen center.

Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

Energy Technology Data Exchange (ETDEWEB)

Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

2015-10-15

Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

Fabrication and characterization of Zinc Oxide (ZnO) nanoparticle by sol-gel method

International Nuclear Information System (INIS)

Siswanto; Akwalia, Putri Riski; Rochman, Nurul T.

2017-01-01

Currently, nanomaterial is an interestingfield of study. This is due to its chemical and physical properties that are superior to that of large-sized materials. One nanomaterial widely studied is zinc oxide (ZnO). In this study, a synthesis of ZnO nanoparticles made by Sol-Gel method was conducted. The process parameters used are variations in pH, in increasing order, of 7; 8; 9; 10; 11; and 12. There are two principal reactions to produce a compound oxide, namely hydrolysis and condensation. NaOH is an agent for the hydrolysis of (CH 3 COO) 2 Zn resultingin Zn (OH) 2 . Subsequently, condensation produces ZnO. Calcination was carried out at a temperature of 80 ° C for 1 hour. The ccharacterization of the samples showed that the condition of pH 12 produced the best sample with a size of 73.8 nm and ZnO percentage of 100%. Although pH 7 produced a particle size of 1.3 nm, the percentage of ZnO formed was only 42.9%. The calcination process was performed to remove CH 3 COONa. However, the process can lead to aggregation of ZnO particles to each other, which increases the particle size. (paper)

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

Science.gov (United States)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Defect studies in electron-irradiated ZnO and GaN

International Nuclear Information System (INIS)

Tuomisto, F.; Look, D.C.; Farlow, G.C.

2007-01-01

We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K

Defect studies in electron-irradiated ZnO and GaN

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, F. [Laboratory of Physics, Helsinki University of Technology, 02015 TKK Espoo (Finland)], E-mail: filip.tuomisto@tkk.fi; Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States); Farlow, G.C. [Physics Department, Wright State University, Dayton, OH 45435 (United States)

2007-12-15

We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K.

Optical and structural properties of undoped and Mn{sup 2+} doped Ca–Li hydroxyapatite nanopowders using mechanochemical synthesis

Energy Technology Data Exchange (ETDEWEB)

Ravindranadh, K. [Department of Physics, Andhra Loyola College, Vijayawada 520008 (India); Department of Physics, Acharya Nagarjuna University, Guntur 522510 (India); Babu, B.; Pushpa Manjari, V.; Thirumala Rao, G. [Department of Physics, Acharya Nagarjuna University, Guntur 522510 (India); Rao, M.C. [Department of Physics, Andhra Loyola College, Vijayawada 520008 (India); Ravikumar, R.V.S.S.N., E-mail: rvssn@yahoo.co.in [Department of Physics, Acharya Nagarjuna University, Guntur 522510 (India)

2015-03-15

Undoped and Mn{sup 2+} doped calcium–lithium hydroxyapatite (CLHA) nanopowders were prepared by mechanochemical synthesis. The prepared samples were characterized by powder X-ray diffraction, scanning electron microscope, transmission electron microscope, optical absorption, photoluminescence, electron paramagnetic resonance and FT-IR spectroscopy techniques. From powder XRD pattern, lattice cell parameters and average crystallite sizes were evaluated. The morphologies of prepared samples were analyzed by using SEM and TEM studies. Optical and EPR data confirmed that the doped Mn{sup 2+} enter into the host material as distorted octahedral site. Photoluminescence spectra of undoped and Mn{sup 2+} doped CLHA nanopowders exhibited blue, blue-green emission bands at 425, 443, 468 nm and green, strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for undoped and Mn{sup 2+} doped CLHA nanopowders. Vibrational bands related to phosphate molecules, P–O–H and hydroxyl ions are observed in FT-IR spectra. - Highlights: • PXRD pattern of prepared undoped and Mn{sup 2+} doped CLHA nanopowders are in nanosize. • Optical and EPR studies reveal site symmetry of Mn{sup 2+} doped CLHA nanopowders are distorted octahedral symmetry. • FT-IR spectra exhibits the various vibrational modes of phosphate ions, P–O–H and water molecules.

Structural and interfacial defects in c-axis oriented LiNbO{sub 3} thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

Energy Technology Data Exchange (ETDEWEB)

Shandilya, Swati; Sreenivas, K; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

2009-05-07

Highly c-axis oriented LiNbO{sub 3} films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO{sub 3} films under the optimized deposition condition. An extra peak at 905 cm{sup -1} was observed in the Raman spectra of LiNbO{sub 3} film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO{sub 3} films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO{sub 3} single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO{sub 3} film and the Al : ZnO layer.

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe

Directory of Open Access Journals (Sweden)

Benramache Said

2016-01-01

Full Text Available In this paper, a new mathematical model has been developed to calculate the optical properties of nano materials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.

Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

KAUST Repository

Phadke, Sujay

2011-09-30

Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

Energy Technology Data Exchange (ETDEWEB)

Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

Reducing ZnO nanoparticles toxicity through silica coating

Directory of Open Access Journals (Sweden)

Sing Ling Chia

2016-10-01

Full Text Available ZnO NPs have good antimicrobial activity that can be utilized as agents to prevent harmful microorganism growth in food. However, the use of ZnO NPs as food additive is limited by the perceived high toxicity of ZnO NPs in many earlier toxicity studies. In this study, surface modification by silica coating was used to reduce the toxicity of ZnO NPs by significantly reducing the dissolution of the core ZnO NPs. To more accurately recapitulate the scenario of ingested ZnO NPs, we tested our as synthesized ZnO NPs in ingestion fluids (synthetic saliva and synthetic gastric juice to determine the possible forms of ZnO NPs in digestive system before exposing the products to colorectal cell lines. The results showed that silica coating is highly effective in reducing toxicity of ZnO NPs through prevention of the dissociation of ZnO NPs to zinc ions in both neutral and acidic condition. The silica coating however did not alter the desired antimicrobial activity of ZnO NPs to E. coli and S. aureus. Thus, silica coating offered a potential solution to improve the biocompatibility of ZnO NPs for applications such as antimicrobial agent in foods or food related products like food packaging. Nevertheless, caution remains that high concentration of silica coated ZnO NPs can still induce undesirable cytotoxicity to mammalian gut cells. This study indicated that upstream safer-by-design philosophy in nanotechnology can be very helpful in a product development.

ZnO Film Photocatalysts

Directory of Open Access Journals (Sweden)

Bosi Yin

2014-01-01

Full Text Available We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM, X-ray diffraction (XRD, Raman spectroscopy, photoluminescence spectra (PL, and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

Energy Technology Data Exchange (ETDEWEB)

Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

2016-10-01

Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

2011-12-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Science.gov (United States)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

2011-12-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

2011-01-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10 17 cm -3 at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As Zn (V Zn ) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn ) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

Energy Technology Data Exchange (ETDEWEB)

Zafar, Muhammad [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of); Yun, Ju-Young [Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 305-600 (Korea, Republic of); Kim, Do-Heyoung, E-mail: kdhh@chonnam.ac.kr [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of)

2017-03-15

Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

International Nuclear Information System (INIS)

Zafar, Muhammad; Yun, Ju-Young; Kim, Do-Heyoung

2017-01-01

Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth

International Nuclear Information System (INIS)

Huh, Junghwan; Kim, Gyu Tae; Park, Jonghyurk; Park, Jeong Young

2011-01-01

We have successfully demonstrated a ZnO nanorod-based 3D nanostructure to show a high sensitivity and very fast response/recovery to hydrogen gas. ZnO nanorods have been synthesized selectively over the pre-defined area at relatively low temperature using a simple self-catalytic solution process assisted by a lithographic method. The conductance of the ZnO nanorod device varies significantly as the concentration of the hydrogen is changed without any additive metal catalyst, revealing a high sensitivity to hydrogen gas. Its superior performance can be explained by the porous structure of its three-dimensional network and the enhanced surface reaction of the hydrogen molecules with the oxygen defects resulting from a high surface-to-volume ratio. It was found that the change of conductance follows a power law depending on the hydrogen concentration. A Langmuir isotherm following an ideal power law and a cross-over behavior of the activation energy with respect to hydrogen concentration were observed. This is a very novel and intriguing phenomenon on nanostructured materials, which suggests competitive surface reactions in ZnO nanorod gas sensors.

Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth.

Science.gov (United States)

Huh, Junghwan; Park, Jonghyurk; Kim, Gyu Tae; Park, Jeong Young

2011-02-25

We have successfully demonstrated a ZnO nanorod-based 3D nanostructure to show a high sensitivity and very fast response/recovery to hydrogen gas. ZnO nanorods have been synthesized selectively over the pre-defined area at relatively low temperature using a simple self-catalytic solution process assisted by a lithographic method. The conductance of the ZnO nanorod device varies significantly as the concentration of the hydrogen is changed without any additive metal catalyst, revealing a high sensitivity to hydrogen gas. Its superior performance can be explained by the porous structure of its three-dimensional network and the enhanced surface reaction of the hydrogen molecules with the oxygen defects resulting from a high surface-to-volume ratio. It was found that the change of conductance follows a power law depending on the hydrogen concentration. A Langmuir isotherm following an ideal power law and a cross-over behavior of the activation energy with respect to hydrogen concentration were observed. This is a very novel and intriguing phenomenon on nanostructured materials, which suggests competitive surface reactions in ZnO nanorod gas sensors.

Electrodeposition of nanoporous ZnO on Al-doped ZnO leading to a highly organized structure for integration in Dye Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Renou G.

2010-10-01

Full Text Available In the present study, we propose an improvement of the anode configuration in Zinc Oxide based Dye Sensitized Solar Cells (DSSC. Instead of the classical configuration, which is composed by two different metal oxides: one transparent conducting oxide (TCO for the substrate and one nanostructured metal oxide for supporting the dye, the new approach is to use ZnO as unique material. Thus, nanoporous zinc oxide films have been electrodeposited on a sputtered Al doped ZnO layers with varying thicknesses up to 6 μm. The evolution of the porosity of the structure has been studied by scanning electron microscope (SEM and electrochemical impedance spectroscopy and compared with standard nanoporous ZnO grown on fluorine doped tin oxide (SnO2:F noted FTO. This results firstly in the modification of the nanoporous structure morphology and secondly a better adhesion between the nanoporous layer and the substrate. Organization in the nanoporous material is enhanced with regular pores arrays and perpendicular to the substrate. Dye sensitized solar cells based on this simplified architecture present efficiencies up to 4.2% and 4.5% with N719 and D149 respectively as sensitizers. Higher fill factor and Voc are found in comparison with the one obtained for deposition on the classical transparent conducting oxide (FTO, which denote improved electrical transfer properties.

ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

International Nuclear Information System (INIS)

Ashrafi, Almamun; Aminuzzaman, Mohammod

2011-01-01

ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2) ZnO ||(0 0 0 6) SiC and [112-bar 0] ZnO ||[112-bar 0] SiC . Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

Synthesis of 1-D ZnO nanorods and polypyrrole/1-D ZnO ...

Indian Academy of Sciences (India)

1-D ZnO nanorods and PPy/1-D ZnO nanocomposites were prepared by the surfactant-assisted precipitation and in situ polymerization method, respectively. The synthesized nanorods and nanocomposites were characterized by UV–Vis spectrophotometer, Fourier transform-infrared spectroscopy (FTIR), X-ray diffraction ...

Eosin Yellowish Dye-Sensitized ZnO Nanostructure-Based Solar Cells Employing Solid PEO Redox Couple Electrolyte

Directory of Open Access Journals (Sweden)

S. S. Kanmani

2012-01-01

Full Text Available ZnO nanostructures are synthesized by low-temperature methods, and they possess polycrystalline hexagonal wurtzite structure with preferential c-axial growth. Morphological study by SEM shows the presence of ~30 nm sized spherical-shaped ZnO nanoparticle, the branched flower-like ZnO composed of many nanorods (length: 1.2 to 4.2 μm and diameter: 0.3 to 0.4 μm, and ~50 nm diameter of individual ZnO nanorods. Reduction in photoemission intensity of nanorods infers the decrease in electron-hole recombination rate, which offers better photovoltaic performance. The dye-sensitized solar cell (DSSC based on ZnO nanorods sensitized with Eosin yellowish dye exhibits a maximum optimal energy conversion efficiency of 0.163% compared to that of nanoparticles and nanoflowers, due to better dye loading and direct conduction pathway for electron transport.

Swift heavy ion irradiation induced phase transformation in undoped and niobium doped titanium dioxide composite thin films

Energy Technology Data Exchange (ETDEWEB)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Chettah, Abdelhak [LGMM Laboratory, Université 20 Août 1955-Skikda, BP 26, 21000 Skikda (Algeria); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, Sunil; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2016-07-15

Study reports the effect of swift heavy ion (SHI) irradiation induced phase transformation in undoped and Niobium doped anatase TiO{sub 2} composite thin films. Investigations were carried out at different densities of electronic excitations (EEs) using 120 MeV Ag and 130 MeV Ni ions irradiations. Films were initially annealed at 900 °C and results revealed that undoped films were highly stable in anatase phase, while the Nb doped films showed the composite nature with the weak presence of Niobium penta-oxide (Nb{sub 2}O{sub 5}) phase. The effect at low density of EEs in undoped film show partial anatase to rutile phase transformation; however doped film shows only further growth of Nb{sub 2}O{sub 5} phase beside the anatase to rutile phase transformation. At higher density of EEs induced by Ag ions, registered continuous ion track of ∼3 nm in lattice which leads to nano-crystallization followed by decomposition/amorphization of rutile TiO{sub 2} and Nb{sub 2}O{sub 5} phases in undoped and doped films, respectively. However, Ni ions are only induced discontinuous sequence of ion tracks with creation of damage and disorder and do not show amorphization in the lattice. The in-elastic thermal spike calculations were carried out for anatase TiO{sub 2} phase to understand the effect of EEs on anatase to rutile phase transformation followed by amorphization in NTO films in terms of continuous and discontinuous track formation by SHI irradiation.

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

Energy Technology Data Exchange (ETDEWEB)

Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C. [Department of Physics, University of Hong Kong, Pokfulam (Hong Kong); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Department of Physics, Hong Kong University of Science and Technology (Hong Kong); College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics, University of Hong Kong, Pokfulam (Hong Kong)

2011-05-15

Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

International Nuclear Information System (INIS)

Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

2012-01-01

Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

Improvements to the hierarchically structured ZnO nanosphere based dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang Yongzhe; Wu Lihui; Liu Yanping; Xie Erqing, E-mail: zhangyzh04@126.co, E-mail: xieeq@lzu.edu.c [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

2009-04-21

Hierarchically structured ZnO nanospheres are synthesized by a wet-chemical method and ZnO sphere-consisting films are applied to dye-sensitized solar cells (DSSCs). It is found that the overall light-to-electricity conversion efficiency ({eta}) is significantly enhanced from 0.474% to 1.03% due to light scattering compared with the ZnO nanoparticle-based DSSC. However, the fill factor (FF) and open-circuit voltage (V{sub oc}) decrease obviously. After annealing the films in an oxygen environment and placing a ZnO blocking layer on the fluorine-doped SnO{sub 2} (FTO) conducting substrate, the FF and V{sub oc} are greatly improved and {eta} increases from 1.03% to 1.59% and 2.25%, respectively. According to the results of x-ray diffraction and photoluminescence, the significant improvements in the cell performances might be due to the suppression of the recombination and the decrease in the resistances existing in the cell.

Synthesis and characterization of organically linked ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Chory, Christine; Riedel, Ingo; Parisi, Juergen [Energy and Semiconductor Research Laboratory (EHF), University of Oldenburg, Carl-von Ossietzky-Strasse 9-11, 26129 Oldenburg (Germany); Kruska, Carsten; Heimbrodt, Wolfram [Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof 5, 35032 Marburg (Germany); Feser, Clemens [NEXT ENERGY - EWE Research Centre for Energy Technology e.V., Carl-von Ossietzky-Strasse 15, 26129 Oldenburg (Germany); Beenken, Wichard J.D. [Department of Theoretical Physics I, Ilmenau University of Technology, Weimarer Strasse 25, 98693 Ilmenau (Germany); Hoppe, Harald [Department of Experimental Physics I, Ilmenau University of Technology, Weimarer Strasse 32, 98693 Ilmenau (Germany)

2012-11-15

We report on the solution-based synthesis and characterization of three-dimensional networks of ZnO nanoparticles where the formation of structures is achieved by covalently linking the nanocrystals with bifunctional organic ligands. The colloidal synthesis will be presented with application of two ligands that vary in size and binding sites. Furthermore we report on structural characterization of dried powders and thin films by means of X-ray diffraction and electron microscopy in order to examine the regularity of the structures. We also present first investigations of the optical properties and electrical conductance behavior in lateral direction of the differently linked hybrid ZnO networks. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis and characterization of organically linked ZnO nanoparticles

International Nuclear Information System (INIS)

Chory, Christine; Riedel, Ingo; Parisi, Juergen; Kruska, Carsten; Heimbrodt, Wolfram; Feser, Clemens; Beenken, Wichard J.D.; Hoppe, Harald

2012-01-01

We report on the solution-based synthesis and characterization of three-dimensional networks of ZnO nanoparticles where the formation of structures is achieved by covalently linking the nanocrystals with bifunctional organic ligands. The colloidal synthesis will be presented with application of two ligands that vary in size and binding sites. Furthermore we report on structural characterization of dried powders and thin films by means of X-ray diffraction and electron microscopy in order to examine the regularity of the structures. We also present first investigations of the optical properties and electrical conductance behavior in lateral direction of the differently linked hybrid ZnO networks. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetic Properties of Gadolinium-Doped ZnO Films and Nanostructures

KAUST Repository

Roqan, Iman S.

2016-08-29

The magnetic properties of Gd-doped ZnO films and nanostructures are important to the development of next-generation spintronic devices. Here, we elucidate the significant role played by Gd-oxygen-deficiency defects in mediating/inducing ferromagnetic coupling in in situ Gd-doped ZnO thin films deposited at low oxygen pressure by pulsed laser deposition (PLD). Samples deposited at higher oxygen pressures exhibited diamagnetic responses. Vacuum annealing was used on these diamagnetic samples (grown at a relatively high oxygen pressures) to create oxygen- deficiency defects with the aim of demonstrating reproducibility of room-temperature ferromagnetism (RTFM). Samples annealed at oxygen environment exhibited super‐ paramagnetism and blocking-temperature effects. The samples possessed secondary phases; Gd segregation led to superparamagnetism. Theoretical studies showed a shift of the 4f level of Gd to the conduction band minimum (CBM) in Gd-doped ZnO nanowires, which led to an overlap with the Fermi level, resulting in strong exchange coupling and consequently RTFM.

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

KAUST Repository

Labouchere, Philippe; Chandiran, Aravind Kumar; Moehl, Thomas; Harms, Hauke; Chavhan, Sudam; Tena-Zaera, Ramon; Nazeeruddin, Mohammad Khaja; Graetzel, Michael; Tetreault, Nicolas

2014-01-01

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive

INVESTIGATION ON PHYSICAL AND ELECTRICAL PROPERTIES OF THE SiO2-ZnO NANOCOMPOSITE AT DIFFERENT COMPOSITION MIXINGS

Directory of Open Access Journals (Sweden)

Moh. Sinol

2018-01-01

Full Text Available Physical and electrical properties of The SiO2-ZnO mixing at different compositions were investigated. The experiment used simple mixing method at the sintering temperature 600oC. It was used the composition mixing ratio of SiO2:ZnO ie. 0:10; 7:3; 5:5; 3:7; and 10:0 (%Wt. Based on X-Ray Diffraction (XRD results, it obtained that a new phase in each sample was not formed even though having different diffraction peak. The mixing ratio of SiO2: ZnO nanocomposite (7:3 %wt had the biggest grain size (77,92 nm, the highest dielectric constant (3.00E+05 and the smallest conductivity (0,726549 (Ωm-1. On the other side, the mixing ratio of SiO2: ZnO nanocomposite (5:5 %wt had the smallest grain size (35.42nm, dielectric constant (3.00E+2 and the highest conductivity (25.36729  (Ωm-1. It can be concluded that the difference of composition ratio offered the change on both physical and electrical properties of SiO2-ZnO nanocomposite.

Random resistor network model of minimal conductivity in graphene.

Science.gov (United States)

Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

2007-10-26

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01

We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

Quenching of photoluminescence of colloidal ZnO nanocrystals by nitronyl nitroxide radicals

Energy Technology Data Exchange (ETDEWEB)

Stroyuk, Oleksandr L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky avenue, 03028 Kyiv (Ukraine); Yakovenko, Anastasiya V.; Raevskaya, Oleksandra E. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky avenue, 03028 Kyiv (Ukraine); Plyusnin, Victor F. [Institute of Chemical Kinetics and Combustion of Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

2014-11-15

Quenching of the photoluminescence of colloidal zinc oxide nanocrystals by a series of stable nitronyl nitroxide radicals was studied by means of stationary and time-resolved luminescence spectroscopy. Among the studied radicals the most efficient quenchers of the ZnO luminescence are the carboxyl-substituted species. The meta-substituted radical was found to be a more active quencher, than para-substituted one due to a closer proximity of the radical center to the nanocrystals surface. The PL quenching has a complex dynamic/static character. The dynamic quenching arises from photocatalytic radical reduction by ZnO conduction band electrons, while the static quenching is caused by adsorption of the photoreduction products on the nanocrystal surface. The non-substituted and OH-substituted radicals are inferior to the products of their photoreduction in capability of adsorption of the ZnO surface, and the quenching is dominated by interactions between the nanocrystals and photoreduced hydroxylamines. In case of COOH-substituted radicals, however, the radicals compete with the photoreduction products for the surface sites of ZnO nanocrystals resulting in a dynamic character of photoluminescence quenching.

Nanoscaled Electrocatalytic Optically Modulated ZnO Nanoparticles through Green Process of Punica granatum L. and Their Antibacterial Activities

Directory of Open Access Journals (Sweden)

Xolile Fuku

2016-01-01

Full Text Available Most recently, green synthesis of metal oxide nanoparticles has become an interesting subject of the nanoscience and nanotechnology. The use of plant systems has been deemed a green route and a dependable method for nanoparticle biosynthesis, owing to its environmental friendly nature. The present work demonstrates the bioreductive green synthesis of nanosized zinc oxide (ZnO using peel extracts of pomegranate. Highly crystalline ZnO nanoparticles (ZnO NPs which are 5 nm in particle size were characterised by HRTEM and XRD. FT-IR spectra confirmed the presence of the biomolecules and formation of plant protein-coated ZnO NPs and also the pure ZnO NPs. Electrochemical investigation revealed the redox properties and the conductivity of the as-prepared ZnO nanoparticles. The optical band gap of ZnO NPs was calculated to be 3.48 eV which indicates that ZnO NPs can be used in metal oxide semiconductor-based devices. Further, the nanomaterials were also found to be good inhibitors of bacterial strains at both low and high concentrations of 5–10 mg mL−1.

Optical properties and photocatalytic activities of spherical ZnO and flower-like ZnO structures synthesized by facile hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Fang, Yongling [Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164 (China); Li, Zhongyu, E-mail: zhongyuli@mail.tsinghua.edu.cn [Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164 (China); Changzhou Expansion New Stuff Technology Limited Company, Changzhou 213122 (China); Jilin Institute of Chemical Technology, Jilin 132022 (China); Xu, Song [Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164 (China); Han, Dandan; Lu, Dayong [Jilin Institute of Chemical Technology, Jilin 132022 (China)

2013-10-25

Highlights: •Spherical ZnO and flower-like ZnO were prepared via a facile hydrothermal method. •The as-prepared ZnO showed high photocatalytic activity over MO degradation. •The as-prepared ZnO were well crystallized and exhibited good optical properties. -- Abstract: Spherical ZnO and flower-like ZnO were prepared by facile hydrothermal method at 180 °C and 160 °C, respectively. The as-prepared samples were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and UV–vis diffuse reflectance spectroscopy (DRS) spectra. The optical properties of as-prepared sample, such as photoluminescence (PL) spectra and Raman spectra were studied. The photocatalytic activities of the as-prepared ZnO particles were investigated by degrading the methyl orange (MO) under UV light irradiation. The photocatalytic studies showed that the organic pollutants have been almost completely degraded and mineralized after irradiation of the UV light. These results indicated that the as-prepared ZnO particles exhibited good optical properties and high photocatalytic activities.

Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

Science.gov (United States)

Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

2018-03-01

Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

2017-07-15

Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage

International Nuclear Information System (INIS)

Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan

2014-01-01

ZnO surfaces adsorb oxygen in the dark and emit CO 2 when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO 2 . The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called “green luminescence” in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy completes