High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

Energy Technology Data Exchange (ETDEWEB)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-09-02

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

Double transparent conducting layers for Si photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

2013-11-29

Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

Double transparent conducting layers for Si photovoltaics

International Nuclear Information System (INIS)

Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

2013-01-01

Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

Science.gov (United States)

Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

2018-04-01

Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

Investigations of electrical and optical properties of functional TCO thin films

Directory of Open Access Journals (Sweden)

Domaradzki Jarosław

2015-06-01

Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

Conductivity in transparent oxide semiconductors.

Science.gov (United States)

King, P D C; Veal, T D

2011-08-24

Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

Nanostructured transparent conducting oxide electrochromic device

Science.gov (United States)

Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2016-05-17

The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

Concentrator bifacial crystalline silicon solar cells with multi-wire metallization attached to TCO layers using transparent conductive polymers

Science.gov (United States)

Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim

2017-09-01

Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The

Nanostructured Transparent Conducting Oxides for Device Applications

Science.gov (United States)

Dutta, Titas

2011-12-01

Research on transparent conducting oxides (TCOs) alternative to indium tin oxide (ITO) has attracted a lot of attention due to the serious concern related to cost and chemical stability of indium tin oxide. The primary aim of this research is to develop low cost alternative transparent conducting oxides with an eye towards (1) increasing the organic solar cell efficiency and (2) fabricating transparent electronic devices utilizing p-type TCOs. To investigate the fundamental properties, the novel TCO films have been grown on sapphire and economical glass substrates using pulsed laser deposition (PLD) technique. The films were also grown under different deposition conditions in order to understand the effect of processing parameters on the film properties. The characteristics of the thin films have been investigated in detail using (X-ray diffraction, TEM, X-ray photoelectron spectroscopy (XPS), UV- photoelectron spectroscopy (UPS), four probe resistivity and UV-Vis transmittance measurements) in order to establish processing-structure-property correlation. ZnO doped with group III elements is a promising candidate because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function (4.4 eV, compared to that of 4.8 eV for ITO), which increases the energy barrier and affects the carrier transport across ZnGa0.05O/organic layer interface. To overcome this issue of ZnO based TCOs, the growth of bilayered structure consisting of very thin MoOx (2.0 target composition. These optimized bilayer films exhibited good optical transmittance (≥ 80%) and low resistivity of ˜ 10-4 O-cm. The optimized NiO1+x / GZO and MoOx / GZO bilayers showed significant increase in work function values (˜5.3 eV). The work function of the bilayer films was tuned by varying the processing conditions and doping of over layers. Preliminary test device results of the organic photovoltaic cells (OPVs

Electrical and optical properties of TCO-Cu2O heterojunction devices

International Nuclear Information System (INIS)

Tanaka, Hideki; Shimakawa, Takahiro; Miyata, Toshihiro; Sato, Hirotoshi; Minami, Tadatsugu

2004-01-01

This report describes the electrical and photovoltaic properties in heterojunction devices consisting of a cuprous oxide (Cu 2 O) sheet and a transparent conducting oxide (TCO) thin film, such as In 2 O 3 , ZnO, In 2 O 3 :Sn (ITO), ZnO:Al (AZO) or AZO-ITO (AZITO) multicomponent oxide, prepared by pulsed laser deposition (PLD). Undoped In 2 O 3 -Cu 2 O heterojunctions prepared by PLD exhibited ohmic current-voltage (I-V) characteristics. The ZnO-Cu 2 O and AZO-Cu 2 O devices exhibited better rectifying I-V characteristics and photovoltaic properties than the ITO-Cu 2 O devices. It was found that the obtainable I-V characteristics and photovoltaic properties were considerably affected by the TCO film deposition conditions. An open-circuit voltage (V OC ) of 0.4 V, a short-circuit current density (J SC ) of 7.1 mA/cm 2 , a fill factor (F.F.) of 0.4 and an energy conversion efficiency (η) of 1.2% were obtained in an AZO-Cu 2 O device under AM2 solar illumination. The V OC , J SC , F.F. and η obtained in AZITO-Cu 2 O heterojunctions increased as the Zn/(Zn+In) atomic ratio was increased

Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

International Nuclear Information System (INIS)

Koida, Takashi; Sai, Hitoshi; Kondo, Michio

2010-01-01

Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

Directory of Open Access Journals (Sweden)

Ming-Hong Lai

2010-01-01

Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

Roll-to-roll fabrication of a low-reflectance transparent conducting oxide film with subwavelength structures

Science.gov (United States)

Chou, Ta-Hsin; Cheng, Kuei-Yuan; Hsieh, Chih-Wei; Takaya, Yasuhiro

2012-04-01

The transparent conducting oxide (TCO) film is a significant component in flat panel display, e-paper and touch panel. The tin-doped indium oxide (ITO) material is one of the most popular TCOs. However, ITO has high refractive index, so the phenomenon of high-reflectance limits the wide use of ITO. In this study, the structure and mass production process of new low-reflectance TCO film is verified. Laser interference lithography and the roll-to-roll UV embossing process are used to fabricate subwavelength structures on PET film; then ITO was deposited on structures by roll-to-roll sputtering. When the dimension of structures reaches 300 nm pitch, the optical reflectance and electrical performance of film are reduced to 8.1% at wavelength 550 nm and its transmittance rate is 84.3% at the same wavelength, and the sheet resistance of this film is 50.44 Ω/□. This result indicates that the new TCO proposed in this study is suitable for touch panel and other display applications.

Influence of the optical window on the performance of TCO/CdS/CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Gordillo, G [Universidad Nacional de Colombia, Bogota (Colombia). Dept. de Fisica; Grizalez, M [Univ. de la Amazonia, Florencia (Colombia); Moreno, L C [Dept. de Quimica, Univ. Nacional de Colombia, Bogota (Colombia); Landazabal, F [Dept. de Fisica, Univ. de Cundinamarca, Fusagasuga (Colombia)

2000-07-01

Thin film solar cells, with structure TCO/CdS/CdTe/Cu, were fabricated using the transparent conducting oxides (TCOs) SnO{sub 2}:F, deposited by spray pyrolysis, and ZnO, deposited by reactive evaporation, as transparent electrodes. The TCO/CdS system with the CdS layer deposited by CBD (chemical bath deposition) method acts in the cell as an optical window and the CdTe deposited by CSS (close space sublimation) method acts as absorber layer, being the unique active layer of the cell. Details of the technological aspects of the solar cells fabrication as well as a discussion to explain the effect of the TCO layer on the solar cell performance will be given. The best results obtained in this work were: open circuit voltage of 0.57 V, short circuit current of 13 mA/cm{sup 2}, fill factor of 0.63 and conversion efficiency of 5.8%. (orig.)

Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

DEFF Research Database (Denmark)

Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

2015-01-01

The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

Limits of transparency of transparent conducting oxides

Science.gov (United States)

Peelaers, Hartwin

A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

KAUST Repository

Myzaferi, A.

2016-08-11

The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Nian, Qiong; Cheng, Gary J. [Birck Nanotechnology Center and School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Callahan, Michael; Bailey, John [Greentech Solutions, Inc., Hanson, Massachusetts 02341 (United States); Look, David [Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States); Efstathiadis, Harry [College of Nanoscale Science and Engineering (CNSE), University of Albany, Albany, New York 12203 (United States)

2015-06-01

Commercial production of transparent conducting oxide (TCO) polycrystalline films requires high electrical conductivity with minimal degradation in optical transparency. Aqueous solution deposited TCO films would reduce production costs of TCO films but suffer from low electrical mobility, which severely degrades both electrical conductivity and optical transparency in the visible spectrum. Here, we demonstrated that grain boundary modification by ultra-violet laser crystallization (UVLC) of solution deposited aluminium-doped zinc oxide (AZO) nanocrystals results in high Hall mobility, with a corresponding dramatic improvement in AZO electrical conductance. The AZO films after laser irradiation exhibit electrical mobility up to 18.1 cm{sup 2} V{sup −1} s{sup −1} with corresponding electrical resistivity and sheet resistances as low as 1 × 10{sup −3} Ω cm and 75 Ω/sq, respectively. The high mobility also enabled a high transmittance (T) of 88%-96% at 550 nm for the UVLC films. In addition, HAZE measurement shows AZO film scattering transmittance as low as 1.8%, which is superior over most other solution deposited transparent electrode alternatives such as silver nanowires. Thus, AZO films produced by the UVLC technique have a combined figure of merit for electrical conductivity, optical transparency, and optical HAZE higher than other solution based deposition techniques and comparable to vacuumed based deposition methods.

Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

International Nuclear Information System (INIS)

Elen, Ken; Capon, Boris; De Dobbelaere, Christopher; Dewulf, Daan; Peys, Nick; Detavernier, Christophe; Hardy, An; Van Bael, Marlies K.

2014-01-01

Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

2014-03-31

Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

P -type transparent conducting oxides

International Nuclear Information System (INIS)

Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

2016-01-01

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

III-V/Si wafer bonding using transparent, conductive oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

2015-06-29

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

Science.gov (United States)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

KAUST Repository

Dai, Zhenyu

2017-09-08

2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large-area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band-offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible-range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.

Measuring the residual stress of transparent conductive oxide films on PET by the double-beam shadow Moiré interferometer

Science.gov (United States)

Chen, Hsi-Chao; Huang, Kuo-Ting; Lo, Yen-Ming; Chiu, Hsuan-Yi; Chen, Guan-Jhen

2011-09-01

The purpose of this research was to construct a measurement system which can fast and accurately analyze the residual stress of the flexible electronics. The transparent conductive oxide (TCO) films, tin-doped indium oxide (ITO), were deposited by radio frequency (RF) magnetron sputtering using corresponding oxide targets on PET substrate. As we know that the shadow Moiré interferometry is a useable way to measure the large deformation. So we set up a double beam shadow Moiré interferometer to measure and analyze the residual stress of TCO films on PET. The feature was to develop a mathematical model and combine the image processing software. By the LabVIEW graphical software, we could measure the distance which is between the left and right fringe on the pattern to solve the curvature of deformed surface. Hence, the residual stress could calculate by the Stoney correction formula for the flexible electronics. By combining phase shifting method with shadow Moiré, the measurement resolution and accuracy have been greatly improved. We also had done the error analysis for the system whose relative error could be about 2%. Therefore, shadow Moiré interferometer is a non-destructive, fast, and simple system for the residual stress on TCO/PET films.

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2005-01-01

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

International Nuclear Information System (INIS)

Irvine, S.J.C.; Lamb, D.A.; Barrioz, V.; Clayton, A.J.; Brooks, W.S.M.; Rugen-Hankey, S.; Kartopu, G.

2011-01-01

A systematic study is made between the relationship of Cd 0.9 Zn 0.1 S/CdTe photovoltaic (PV) device properties for three different commercial transparent conducting oxide (TCO) materials and some experimental CdO to determine the role of the TCO in device performance. The resistance contribution from the TCO was measured after depositing the gold contact architectures directly onto the TCOs. These were compared with the Cd 0.9 Zn 0.1 S/CdTe device properties using the same contact arrangements. Series resistance for the commercial TCOs correlated with their sheet resistance and gave good agreement with the PV device series resistance for the indium tin oxide (ITO) and fluorine doped tin oxide (FTO) 15 Ω/Sq. superstrates. The devices on the thicker FTO 7 Ω/sq superstrates were dominated by a low shunt resistance, which was attributed to the rough surface morphology causing micro-shorts. The device layers on the CdO substrate delaminated but devices were successfully made for ultra-thin CdTe (0.8 μm thick) and compared favourably with the comparable device on ITO. From the measurements on these TCOs it was possible to deduce the back contact resistance and gave an average value of 2 Ω.cm 2 . The correlation of fill factor with series resistance has been compared with the predictions of a 1-D device model and shows excellent agreement. For high efficiency devices the combined series resistance from the TCO and back contact need to be less than 1 Ω.cm 2 .

Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

Directory of Open Access Journals (Sweden)

Jang T.S.

2016-01-01

Full Text Available We report on the fabrication of Al-doped ZnO (AZO transparent-conductive oxide (TCO films on glass substrates by RF-sputtering, their physical properties, and the effect of thermal annealing on the AZO TCO films. The AZO films on glass substrates have a preferred orientation of the c-axis, irrespective of deposition conditions, which means that the AZO films have textured structures along the c-axis. The film thickness and surface roughness in the AZO films are proportional to plasma power and deposition time, while they are inverse-proportional to working gas ratio and working pressure. The AZO films have the optical transmittance over 80 % in the wavelength range of 400 – 1000 nm, irrespective of deposition conditions. The plasma power and the deposition time relatively give a large influence on the optical transmittance, compared to the working gas ratio and the working pressure. The AZO films deposited at room temperature have poor electrical properties, while the thermal annealing under Ar ambient significantly improves the electrical conductivity of the AZO films: an as-deposited sample has an electrical resistivity of 87 Wcm and an electron concentration of 1.3´1017 cm−3, while the annealed sample has an electrical resistivity of 3.7´10-2 Wcm and an electron concentration of 1.2´1020 cm−3.

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

NARCIS (Netherlands)

Macco, B.; Wu, Y.; Vanhemel, D.; Kessels, W.M.M.

2014-01-01

The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown

Triple-conducting layered perovskites as cathode materials for proton-conducting solid oxide fuel cells.

Science.gov (United States)

Kim, Junyoung; Sengodan, Sivaprakash; Kwon, Goeun; Ding, Dong; Shin, Jeeyoung; Liu, Meilin; Kim, Guntae

2014-10-01

We report on an excellent anode-supported H(+) -SOFC material system using a triple conducting (H(+) /O(2-) /e(-) ) oxide (TCO) as a cathode material for H(+) -SOFCs. Generally, mixed ionic (O(2-) ) and electronic conductors (MIECs) have been selected as the cathode material of H(+) -SOFCs. In an H(+) -SOFC system, however, MIEC cathodes limit the electrochemically active sites to the interface between the proton conducting electrolyte and the cathode. New approaches to the tailoring of cathode materials for H(+) -SOFCs should therefore be considered. TCOs can effectively extend the electrochemically active sites from the interface between the cathode and the electrolyte to the entire surface of the cathode. The electrochemical performance of NBSCF/BZCYYb/BZCYYb-NiO shows excellent long term stability for 500 h at 1023 K with high power density of 1.61 W cm(-2) . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New route of phase transition for enhanced TCO property of ZnO: A first-principles study

Energy Technology Data Exchange (ETDEWEB)

Singh, Santosh; Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com [Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya (Central University), Bilaspur, Chhattisgarh, India 495009 (India)

2016-05-23

The ZnO is one of the best transparent conducting oxide (TCO) materials for optoelectronic properties. Primarilly three phases of ZnO namely wurtzite, rocksalt and zincblend along with other prominent phases under different pressure and with different phase transformation routes are reported. The route of phase transformation may differ and depends on the external parameters such as pressure. The conventional route for the phase transformation of wurtzite (B4) phase into CsCl type (B2) phase via rocksalt phase (B1) is estimated at the relatively high pressure value of the 256 GPa. In present paper, we propose a new route of transformation of B4 to B2 phase of ZnO via β-BeO type phase at relatively low pressure value of 43 GPa. In present study, the phase transformation analysis and the electronic structure analysis for different phases are carried out by using density functional theory (DFT). It is also observed that B2 phase have high dispersive nature of bottom of conduction band and consequently high mobility of charge carriers. It indicates the possibility of B2 phase may have better TCO properties among other phases of ZnO.

Eddy current imaging for electrical characterization of silicon solar cells and TCO layers

Science.gov (United States)

Hwang, Byungguk; Hillmann, Susanne; Schulze, Martin; Klein, Marcus; Heuer, Henning

2015-03-01

Eddy Current Testing has been mainly used to determine defects of conductive materials and wall thicknesses in heavy industries such as construction or aerospace. Recently, high frequency Eddy Current imaging technology was developed. This enables the acquirement of information of different depth level in conductive thin-film structures by realizing proper standard penetration depth. In this paper, we summarize the state of the art applications focusing on PV industry and extend the analysis implementing achievements by applying spatially resolved Eddy Current Testing. The specific state of frequency and complex phase angle rotation demonstrates diverse defects from front to back side of silicon solar cells and characterizes homogeneity of sheet resistance in Transparent Conductive Oxide (TCO) layers. In order to verify technical feasibility, measurement results from the Multi Parameter Eddy Current Scanner, MPECS are compared to the results from Electroluminescence.

Use of TCO as splitter in the optical splitting system for solar cells combination: a simulation study

Science.gov (United States)

Ayala-Mató, F.; Seuret-Jiménez, D.; Vigil-Galán, O.; Escobedo Alatorre, J. J.

2017-10-01

Transparent conducting oxides (TCOs) are evaluated as optical splitters in combined single thin film solar cells by using theoretical considerations. The optical properties of TCOs (transmittance and reflectance) are calculated using the Drude theory for free carriers. To improve the overall efficiency of the combined solar cells, the optical properties of the TCOs are studied as a function of the electron concentration and thickness, to obtain the best fit with the external quantum efficiency (EQE) of the solar cells in each case. The optimum values of the above parameters are obtained by applying a modified version of the Hooke-Jeeves method. To validate the proposal of the use of a TCO as the splitter, the short circuit current is calculated for several combined solar cell systems and the results are compared with those obtained using more sophisticated and expensive splitters, reported in the literature. The experimental results using a commercial TCO are presented, to verify the validity and feasibility of the novel concept.

High spectral selectivity for solar absorbers using a monolayer transparent conductive oxide coated on a metal substrate

Science.gov (United States)

Shimizu, Makoto; Suzuki, Mari; Iguchi, Fumitada; Yugami, Hiroo

2017-05-01

A spectrally selective absorber composed of a monolayer transparent conductive oxide (TCO) coated on a metal substrate is investigated for use in solar systems operating at temperatures higher (>973 K) than the operation temperature of conventional systems ( ˜ 673 K). This method is different from the currently used solar-selective coating technologies, such as those using multilayered and cermet materials. The spectral selective absorption property can be attributed to the inherent optical property of TCO owing to the plasma frequency and interferences between the substrates. Since spectral selectivity can be achieved using monolayered materials, the effect of atomic diffusion occurring at each layer boundary in a multilayer or cermet coatings under high-temperature conditions can be reduced. In addition, since this property is attributed to the inherent property of TCO, the precise control of the layer thickness can be omitted if the layer is sufficiently thick (>0.5 μm). The optimum TCO properties, namely, carrier density and mobility, required for solar-selective absorbers are analyzed to determine the cutoff wavelength and emittance in the infrared range. A solar absorptance of 0.95 and hemispherical emittance of 0.10 at 973 K are needed for achieving the optimum TCO properties, i.e., a carrier density of 5.5 × 1020 cm-3 and mobility of 90 cm2 V-1 s-1 are required. Optical simulations indicate that the spectrally selective absorption weakly depends on the incident angle and film thickness. The thermal stability of the fabricated absorber treated at temperatures up to 973 K for 10 h is verified in vacuum by introducing a SiO2 interlayer, which plays an important role as a diffusion barrier.

Electrolytic 99TcO4- reduction at inert electrodes

International Nuclear Information System (INIS)

Kremer, C.; Gambino, D.; Leon, A.; Kremer, E.

1990-01-01

Electrolytic pertechnetate reduction at inert electrodes was studied as an alternative procedure for synthesizing Tc complexes. Pertechnetate reduction was carried out in aqueous media using different aminated ligands (en, dien, trien and 1,3-dap) forming [TcO 2 (amine) 2 ] + type complexes. Simultaneously with synthesis of the desired Tc complex, TcO 2 was electrodeposited onto the cathode. Conversion of TcO 4 - to Tc complex and TcO 2 was studied as a function of several variables (kind and concentration of supporting electrolyte, ligand concentration, pH, current and electrolysis time). (author) 9 refs.; 6 figs.; 1 tab

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

Energy Technology Data Exchange (ETDEWEB)

Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

2011-01-02

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

International Nuclear Information System (INIS)

Leem, Jung Woo; Yu, Jae Su

2011-01-01

The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

Energy Technology Data Exchange (ETDEWEB)

Silverman, Gary S.; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu, Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve; Hartmann, Sören; Jessen, Frank; Krogmann, Bianaca; Rickers, Christoph; Ruske, Manfred; Schwab, Holger; Bertram, Dietrich

2011-01-02

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

Oxidative dissolution potential of biogenic and abiogenic TcO2 in subsurface sediments

International Nuclear Information System (INIS)

Fredrickson, J.K.; Zachara, J.M.; Plymale, A.E.; Heald, S.M.; McKinley, J.P.; Kennedy, D.W.; Liu, C.; Nachimuthu, P.

2009-01-01

Technetium-99 (Tc) is an important fission product contaminant associated with sites of nuclear fuels reprocessing and geologic nuclear waste disposal. Tc is highly mobile in its most oxidized state (Tc(VII)O 4 - ) and less mobile in the reduced form (Tc(IV)O 2 · nH 2 O). Here we investigate the potential for oxidation of Tc(IV) that was heterogeneously reduced by reaction with biogenic Fe(II) in two sediments differing in mineralogy and aggregation state; unconsolidated Pliocene-age fluvial sediment from the upper Ringold (RG) Formation at the Hanford Site and a clay-rich saprolite from the Field Research Center (FRC) background site on the Oak Ridge Site. Both sediments contained Fe(III) and Mn(III/IV) as redox active phases, but FRC also contained mass-dominant Fe-phyllosilicates of different types. Shewanella putrefaciens CN32 reduced Mn(III/IV) oxides and generated Fe(II) that was reactive with Tc(VII) in heat-killed, bioreduced sediment. After bioreduction and heat-killing, biogenic Fe(II) in the FRC exceeded that in RG by a factor of two. More rapid reduction rates were observed in the RG that had lower biogenic Fe(II), and less particle aggregation. EXAFS measurements indicated that the primary reduction product was a TcO 2 -like phase in both sediments. The biogenic redox product Tc(IV) oxidized rapidly and completely in RG when contacted with air. Oxidation, in contrast, was slow and incomplete in the FRC, in spite of similar molecular scale speciation of Tc compared to RG. X-ray microprobe, electron microprobe, X-ray absorption spectroscopy, and micro X-ray diffraction were applied to the whole sediment and isolated Tc-containing particles. These analyses revealed that non-oxidizable Tc(IV) in the FRC existed as complexes with octahedral Fe(III) within intra-grain domains of 50-100 (micro)m-sized, Fe-containing micas presumptively identified as celadonite. The markedly slower oxidation rates in FRC as compared to RG were attributed to mass

Oxidative dissolution potential of biogenic and abiogenic TcO 2 in subsurface sediments

Science.gov (United States)

Fredrickson, James K.; Zachara, John M.; Plymale, Andrew E.; Heald, Steve M.; McKinley, James P.; Kennedy, David W.; Liu, Chongxuan; Nachimuthu, Ponnusamy

2009-04-01

Technetium-99 (Tc) is an important fission product contaminant associated with sites of nuclear fuels reprocessing and geologic nuclear waste disposal. Tc is highly mobile in its most oxidized state [Tc(VII)O4-] and less mobile in the reduced form [Tc(IV)O 2· nH 2O]. Here we investigate the potential for oxidation of Tc(IV) that was heterogeneously reduced by reaction with biogenic Fe(II) in two sediments differing in mineralogy and aggregation state; unconsolidated Pliocene-age fluvial sediment from the upper Ringold (RG) Formation at the Hanford Site and a clay-rich saprolite from the Field Research Center (FRC) background site on the Oak Ridge Site. Both sediments contained Fe(III) and Mn(III/IV) as redox active phases, but FRC also contained mass-dominant Fe-phyllosilicates of different types. Shewanella putrefaciens CN32 reduced Mn(III/IV) oxides and generated Fe(II) that was reactive with Tc(VII) in heat-killed, bioreduced sediment. After bioreduction and heat-killing, biogenic Fe(II) in the FRC exceeded that in RG by a factor of two. More rapid reduction rates were observed in the RG that had lower biogenic Fe(II), and less particle aggregation. EXAFS measurements indicated that the primary reduction product was a TcO 2-like phase in both sediments. The biogenic redox product Tc(IV) oxidized rapidly and completely in RG when contacted with air. Oxidation, in contrast, was slow and incomplete in the FRC, in spite of similar molecular scale speciation of Tc compared to RG. X-ray microprobe, electron microprobe, X-ray absorption spectroscopy, and micro X-ray diffraction were applied to the whole sediment and isolated Tc-containing particles. These analyses revealed that non-oxidizable Tc(IV) in the FRC existed as complexes with octahedral Fe(III) within intra-grain domains of 50-100 μm-sized, Fe-containing micas presumptively identified as celadonite. The markedly slower oxidation rates in FRC as compared to RG were attributed to mass

Structure and defect studies of In2O3:Zn,Zr for higher stability TCO

Science.gov (United States)

Herwadkar, Aditi; Kim, Kwiseon

2010-03-01

The defects structures among the transparent conducting oxides (TCO) plays a major role in determining stability of the oxide over a temperature range and in tuning electrical and optical properties for the different TCO applications In2O3 crystallizes in the cubic bixbyite structure. The structure can be derived from the related fluorite structure by removing one fourth of the anions and allowing for small shifts of the ionic positions. In2O3 has two non-equivalent six-fold coordinated cation sites. For one of the sites, the cation is bounded by two structural vacancy along the body diagonal and for the other non-equivalent site the vacancies lie along the face diagonal. These vacancies are actually empty oxygen vacancy positions. Indium is in +3 charge state. ZnO on the other hand crystallizes to form wurtzite structure with four-fold coordination for Zn and is in +2 charge state where as the crystal structure of ZrO is rulite with Zr in +4 charge state and is four fold coordinated. Co-doping of Zn and Zr with each substituting the In atom satisfies the octet rule and is lower in energy then the individual substitutions with overall neutrality. The formation enthalpy as a function of pair (Zn, Zr) shows a minimum at experimental composition of In2(Zn,Zr)3O24. We in this work present the electronic structure optimization and study the defect states in this material.

Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

2011-09-15

The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

Directory of Open Access Journals (Sweden)

Roca i Cabarrocas P.

2012-07-01

Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

Amorphous and crystalline In_2O_3-based transparent conducting films for photovoltaics

International Nuclear Information System (INIS)

Koida, Takashi

2017-01-01

We reported solar cells with reduced electrical and optical losses using hydrogen-doped In_2O_3 (In_2O_3:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In_2O_3:H films grown by magnetron sputtering. The polycrystalline (poly-) In_2O_3:H films exhibited electron mobilities (over 100 cm"2V"-"1 s"-"1) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In_2O_3-based TCO; (ii) the structural and optoelectrical properties of the a-In_2O_3:H and poly-In_2O_3:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

2013-01-01

In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

The uptake of TcO-4 by plants: A mathematical description

International Nuclear Information System (INIS)

Van Loon, L.R.; Desmet, G.M.; Cremers, A.

1989-01-01

A model describing the uptake of TcO-4 by spinach plants was developed. The equation relates both plant and soil parameters (e.g., growth, metabolism, concentration of TcO-4 and composition of the growth medium) to the concentration of Tc in the shoot of the plant. As the soil solution is the medium from which plants obtain nutrients and non-nutrients, the modeling parameters have been obtained from uptake experiments using nutrient solutions (= simulated soil solutions) as the growth medium. Two important model assumptions are: (1) that an equilibrium exists between TcO-4 in the plant and the growth medium and (2) that the leaf TcO-4 metabolism is a pseudofirst order reaction occurring in a non-constant volume

Implementering av TCO-konseptet: En casestudie i ENGIE E&P Norge

OpenAIRE

Raaen, Henrik; Fagernes, Eva

2016-01-01

Master's thesis in Executive MBA I denne masteroppgaven ønsker vi å undersøke hvordan Total Cost of Ownership (TCO) som konsept for anskaffelser er implementert i ENGIE E&P Norge (ENGIE). Vi har strukturert disse betraktningene gjennom en analysemodell. Analysemodellen deler relevante teoretiske bidrag i flere begrep for å forstå hvordan TCO-konseptet er implementert i ENGIE. Hensikten med oppgaven er å identifisere hvordan det teoretiske grunnlaget for TCO som konsept og implementering...

Amorphous and crystalline In{sub 2}O{sub 3}-based transparent conducting films for photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)

2017-02-15

We reported solar cells with reduced electrical and optical losses using hydrogen-doped In{sub 2}O{sub 3} (In{sub 2}O{sub 3}:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In{sub 2}O{sub 3}:H films grown by magnetron sputtering. The polycrystalline (poly-) In{sub 2}O{sub 3}:H films exhibited electron mobilities (over 100 cm{sup 2}V{sup -1} s{sup -1}) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In{sub 2}O{sub 3}-based TCO; (ii) the structural and optoelectrical properties of the a-In{sub 2}O{sub 3}:H and poly-In{sub 2}O{sub 3}:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Laser welding of nanoparticulate TiO2 and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

International Nuclear Information System (INIS)

Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu

2010-01-01

Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO 2 electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO 2 films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO 2 . Electron microscopy analysis and impedance measurements showed that a thin continuous TiO 2 layer is formed at the interface as a result of the local melting of TiO 2 nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO 2 paste revealed an efficiency improvement from η = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO 2 electrodes made from a commercial paste.

TcoF-DB: dragon database for human transcription co-factors and transcription factor interacting proteins

KAUST Repository

Schaefer, Ulf; Schmeier, Sebastian; Bajic, Vladimir B.

2010-01-01

The initiation and regulation of transcription in eukaryotes is complex and involves a large number of transcription factors (TFs), which are known to bind to the regulatory regions of eukaryotic DNA. Apart from TF-DNA binding, protein-protein interaction involving TFs is an essential component of the machinery facilitating transcriptional regulation. Proteins that interact with TFs in the context of transcription regulation but do not bind to the DNA themselves, we consider transcription co-factors (TcoFs). The influence of TcoFs on transcriptional regulation and initiation, although indirect, has been shown to be significant with the functionality of TFs strongly influenced by the presence of TcoFs. While the role of TFs and their interaction with regulatory DNA regions has been well-studied, the association between TFs and TcoFs has so far been given less attention. Here, we present a resource that is comprised of a collection of human TFs and the TcoFs with which they interact. Other proteins that have a proven interaction with a TF, but are not considered TcoFs are also included. Our database contains 157 high-confidence TcoFs and additionally 379 hypothetical TcoFs. These have been identified and classified according to the type of available evidence for their involvement in transcriptional regulation and their presence in the cell nucleus. We have divided TcoFs into four groups, one of which contains high-confidence TcoFs and three others contain TcoFs which are hypothetical to different extents. We have developed the Dragon Database for Human Transcription Co-Factors and Transcription Factor Interacting Proteins (TcoF-DB). A web-based interface for this resource can be freely accessed at http://cbrc.kaust.edu.sa/tcof/ and http://apps.sanbi.ac.za/tcof/. © The Author(s) 2010.

TcoF-DB: dragon database for human transcription co-factors and transcription factor interacting proteins

KAUST Repository

Schaefer, Ulf

2010-10-21

The initiation and regulation of transcription in eukaryotes is complex and involves a large number of transcription factors (TFs), which are known to bind to the regulatory regions of eukaryotic DNA. Apart from TF-DNA binding, protein-protein interaction involving TFs is an essential component of the machinery facilitating transcriptional regulation. Proteins that interact with TFs in the context of transcription regulation but do not bind to the DNA themselves, we consider transcription co-factors (TcoFs). The influence of TcoFs on transcriptional regulation and initiation, although indirect, has been shown to be significant with the functionality of TFs strongly influenced by the presence of TcoFs. While the role of TFs and their interaction with regulatory DNA regions has been well-studied, the association between TFs and TcoFs has so far been given less attention. Here, we present a resource that is comprised of a collection of human TFs and the TcoFs with which they interact. Other proteins that have a proven interaction with a TF, but are not considered TcoFs are also included. Our database contains 157 high-confidence TcoFs and additionally 379 hypothetical TcoFs. These have been identified and classified according to the type of available evidence for their involvement in transcriptional regulation and their presence in the cell nucleus. We have divided TcoFs into four groups, one of which contains high-confidence TcoFs and three others contain TcoFs which are hypothetical to different extents. We have developed the Dragon Database for Human Transcription Co-Factors and Transcription Factor Interacting Proteins (TcoF-DB). A web-based interface for this resource can be freely accessed at http://cbrc.kaust.edu.sa/tcof/ and http://apps.sanbi.ac.za/tcof/. © The Author(s) 2010.

Laser welding of nanoparticulate TiO{sub 2} and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2010-08-27

Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO{sub 2} electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO{sub 2} films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO{sub 2}. Electron microscopy analysis and impedance measurements showed that a thin continuous TiO{sub 2} layer is formed at the interface as a result of the local melting of TiO{sub 2} nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO{sub 2} paste revealed an efficiency improvement from {eta} = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO{sub 2} electrodes made from a commercial paste.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

Science.gov (United States)

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

International Nuclear Information System (INIS)

Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

2010-01-01

Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

Semipolar III-nitride laser diodes with zinc oxide cladding.

Science.gov (United States)

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

High mobility In{sub 2}O{sub 3}:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

Energy Technology Data Exchange (ETDEWEB)

Macco, B.; Wu, Y.; Vanhemel, D. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

2014-12-01

The preparation of high-quality In{sub 2}O{sub 3}:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In{sub 2}O{sub 3}:H films were deposited by atomic layer deposition at 100 C, after which they underwent solid phase crystallization by a short anneal at 200 C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm{sup 2}/V s at a device-relevant carrier density of 1.8 x 10{sup 20} cm{sup -3}. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparing the fundamental physics and device performance of transparent, conductive nanostructured networks with conventional transparent conducting oxides

Energy Technology Data Exchange (ETDEWEB)

Barnes, Teresa M.; Reese, Matthew O.; Bergeson, Jeremy D.; Larsen, Brian A.; Blackburn, Jeffrey L.; Beard, Matthew C.; Bult, Justin; Van de Lagemaat, Jao [NREL, 1617 Cole Blvd., Golden, CO 80401 (United States)

2012-03-15

Networks made of single-walled carbon nanotubes (SWNTs) and metallic nanowire networks, graphene, and ultra-thin metal films have all been proposed as replacements for transparent conducting oxides (TCOs) in photovoltaic and other applications. However, only limited comparisons of nanostructured networks and TCOs are available. Several common figures of merit that are often used to compare the electrical and optical performance of the transparent contacts are evaluated here, and the merits of each method of comparison are discussed. Calculating the current loss due to absorption in the TCO is the most useful metric for evaluating new materials for use in solar cells with well-defined sheet resistance requirements and known quantum efficiencies. The 'Haacke' figure of merit, {phi}{sub H}, correlates fairly well with current loss and is a good metric for evaluating electro-optical performance for more general applications. The analyses presented here demonstrate that silver nanowire networks are much closer to achieving optimal electrical and optical properties than carbon-based networks. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

Directory of Open Access Journals (Sweden)

Daniela Lehr

2015-11-01

Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

TcoF-DB v2: update of the database of human and mouse transcription co-factors and transcription factor interactions

KAUST Repository

Schmeier, Sebastian; Alam, Tanvir; Essack, Magbubah; Bajic, Vladimir B.

2016-01-01

Transcription factors (TFs) play a pivotal role in transcriptional regulation, making them crucial for cell survival and important biological functions. For the regulation of transcription, interactions of different regulatory proteins known as transcription co-factors (TcoFs) and TFs are essential in forming necessary protein complexes. Although TcoFs themselves do not bind DNA directly, their influence on transcriptional regulation and initiation, although indirect, has been shown to be significant, with the functionality of TFs strongly influenced by the presence of TcoFs. In the TcoF-DB v2 database, we collect information on TcoFs. In this article, we describe updates and improvements implemented in TcoF-DB v2. TcoF-DB v2 provides several new features that enables exploration of the roles of TcoFs. The content of the database has significantly expanded, and is enriched with information from Gene Ontology, biological pathways, diseases and molecular signatures. TcoF-DB v2 now includes many more TFs; has substantially increased the number of human TcoFs to 958, and now includes information on mouse (418 new TcoFs). TcoF-DB v2 enables the exploration of information on TcoFs and allows investigations into their influence on transcriptional regulation in humans and mice. TcoF-DB v2 can be accessed at http://tcofdb.org/.

TcoF-DB v2: update of the database of human and mouse transcription co-factors and transcription factor interactions

KAUST Repository

Schmeier, Sebastian

2016-10-17

Transcription factors (TFs) play a pivotal role in transcriptional regulation, making them crucial for cell survival and important biological functions. For the regulation of transcription, interactions of different regulatory proteins known as transcription co-factors (TcoFs) and TFs are essential in forming necessary protein complexes. Although TcoFs themselves do not bind DNA directly, their influence on transcriptional regulation and initiation, although indirect, has been shown to be significant, with the functionality of TFs strongly influenced by the presence of TcoFs. In the TcoF-DB v2 database, we collect information on TcoFs. In this article, we describe updates and improvements implemented in TcoF-DB v2. TcoF-DB v2 provides several new features that enables exploration of the roles of TcoFs. The content of the database has significantly expanded, and is enriched with information from Gene Ontology, biological pathways, diseases and molecular signatures. TcoF-DB v2 now includes many more TFs; has substantially increased the number of human TcoFs to 958, and now includes information on mouse (418 new TcoFs). TcoF-DB v2 enables the exploration of information on TcoFs and allows investigations into their influence on transcriptional regulation in humans and mice. TcoF-DB v2 can be accessed at http://tcofdb.org/.

Fast Processing of Sol-Gel TCO

NARCIS (Netherlands)

Deelen, J. van; Rem, M.; Arfsten, N.; Buskens, P.P.

2016-01-01

TCOs are usually deposited using sputtering or chemical vapor deposition, which have a yield of typically 50-75%. The sol gel method does not need low pressure and can be done with a high precursor yield in the range of 90 – 100%. Sol gel enables also the TCO function as a planarization or

Thin film photovoltaic devices with a minimally conductive buffer layer

Science.gov (United States)

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

Science.gov (United States)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Gas-Phase Photocatalytic Oxidation of Dimethylamine: The Reaction Pathway and Kinetics

Directory of Open Access Journals (Sweden)

Anna Kachina

2007-01-01

Full Text Available Gas-phase photocatalytic oxidation (PCO and thermal catalytic oxidation (TCO of dimethylamine (DMA on titanium dioxide was studied in a continuous flow simple tubular reactor. Volatile PCO products of DMA included ammonia, formamide, carbon dioxide, and water. Ammonia was further oxidized in minor amounts to nitrous oxide and nitrogen dioxide. Effective at 573 K, TCO resulted in the formation of ammonia, hydrogen cyanide, carbon monoxide, carbon dioxide, and water. The PCO kinetic data fit well to the monomolecular Langmuir-Hinshelwood model, whereas TCO kinetic behaviour matched the first-order process. No deactivation of the photocatalyst during the multiple long-run experiments was observed.

Transparent conducting oxide top contacts for organic electronics

KAUST Repository

Franklin, Joseph B.

2014-01-01

A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200°C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150°C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5-75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Ω □-1 can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures-enabling the deposition of highly transparent AZO with sheet resistances below 50 Ω □-1 directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device. © 2014 The Royal Society of Chemistry. 2014.

Using value-based total cost of ownership (TCO) measures to inform subsystem trade-offs

Science.gov (United States)

Radziwill, Nicole M.; DuPlain, Ronald F.

2010-07-01

Total Cost of Ownership (TCO) is a metric from management accounting that helps expose both the direct and indirect costs of a business decision. However, TCO can sometimes be too simplistic for "make vs. buy" decisions (or even choosing between competing design alternatives) when value and extensibility are more critical than total cost. A three-dimensional value-based TCO, which was developed to clarify product decisions for an observatory prior to Final Design Review (FDR), will be presented in this session. This value-based approach incorporates priority of requirements, satisfiability of requirements, and cost, and can be easily applied in any environment.

Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

Science.gov (United States)

Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

2017-10-17

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

The validity and reliability of the 'Cancer Caregiving Tasks, Consequences and Needs Questionnaire' (CaTCoN)

DEFF Research Database (Denmark)

Lund, Line; Ross, Lone; Petersen, Morten A

2014-01-01

and reliability of the multi-item scales in the CaTCoN using psychometric analyses as well as tests of convergent and discriminant validity with the existing instruments FAMCARE and Family Inventory of Needs (FIN). Material and methods. Based on theoretical considerations, a subscale structure in the Ca......TCoN and the existing questionnaires FAMCARE and FIN. Conclusion. Taken together the psychometric analyses and tests of convergent and discriminant validity indicate that the validity and reliability of the CaTCoN are satisfactory.......Background. Caregivers are often involved in and affected by the patient's disease. The questionnaire 'Cancer Caregiving Tasks, Consequences and Needs Questionnaire' (CaTCoN) was developed to measure caregivers' experiences. The aim of this study is to evaluate the construct validity...

Moderate Increase in TCO2 Enhances Photosynthesis of Seagrass Zostera japonica, but Not Zostera marina: Implications for Acidification Mitigation

Directory of Open Access Journals (Sweden)

Cale A. Miller

2017-07-01

Full Text Available Photosynthesis and respiration are vital biological processes that shape the diurnal variability of carbonate chemistry in nearshore waters, presumably ameliorating (daytime or exacerbating (nighttime short-term acidification events, which are expected to increase in severity with ocean acidification (OA. Biogenic habitats such as seagrass beds have the capacity to reduce CO2 concentration and potentially provide refugia from OA. Further, some seagrasses have been shown to increase their photosynthetic rate in response to enriched total CO2 (TCO2. Therefore, the ability of seagrass to mitigate OA may increase as concentrations of TCO2 increase. In this study, we exposed native Zostera marina and non-native Zostera japonica seagrasses from Padilla Bay, WA (USA to various levels of irradiance and TCO2. Our results indicate that the average maximum net photosynthetic rate (Pmax for Z. japonica as a function of irradiance and TCO2 was 3x greater than Z. marina when standardized to chlorophyll (360 ± 33 μmol TCO2 mg chl−1 h−1 and 113 ± 10 μmol TCO2 mg chl−1 h−1, respectively. Additionally, Z. japonica increased its Pmax ~50% when TCO2 increased from ~1,770 to 2,051 μmol TCO2 kg−1. In contrast, Z. marina did not display an increase in Pmax with higher TCO2, possibly due to the variance of photosynthetic rates at saturating irradiance within TCO2 treatments (coefficient of variation: 30–60% relative to the range of TCO2 tested. Our results suggest that Z. japonica can affect the OA mitigation potential of seagrass beds, and its contribution may increase relative to Z. marina as oceanic TCO2 rises. Further, we extended our empirical results to incorporate various biomass to water volume ratios in order to conceptualize how these additional attributes affect changes in carbonate chemistry. Estimates show that the change in TCO2 via photosynthetic carbon uptake as modeled in this study can produce positive diurnal changes in pH and

Phase formation and stability in TiO{sub x} and ZrO{sub x} thin films. Extremely sub-stoichiometric functional oxides for electrical and TCO applications

Energy Technology Data Exchange (ETDEWEB)

Henning, Ralph A.; Leichtweiss, Thomas; Decker, Yannic; Janek, Juergen [Giessen Univ. (Germany). Inst. of Physical Chemistry; Dorow-Gerspach, Daniel; Schmidt, Ruediger; Wuttig, Matthias [RWTH Aachen Univ. (Germany). Inst. of Physics; Wolff, Niklas; Schuermann, Ulrich; Kienle, Lorenz [Kiel Univ. (Germany). Faculty of Engineering

2017-03-01

pressure. Slightly non-stoichiometric TiO{sub 2-x} films form a degenerate semiconductor with room temperature conductivities as high as 170 S/cm. Moreover, controlling both, the doping level and the vacancy concentration of these films allows to control the phase formation and the transition temperature between the rutile and anatase TiO{sub 2} polymorphs. Niobium doping of sputter deposited TiO{sub 2} can lead to films with very high electrical conductivities while maintaining a high optical transmittance demonstrating the potential of the material as an alternative transparent conducting oxide (TCO) with extraordinary properties.

CARINA TCO2 data in the Atlantic Ocean

Directory of Open Access Journals (Sweden)

R. Wanninkhof

2010-07-01

Full Text Available Water column data of carbon and carbon-relevant hydrographic and hydrochemical parameters from 188 cruises in the Arctic Mediterranean Seas, Atlantic and Southern Ocean have been retrieved and merged in a new data base: the CARINA (CARbon IN the Atlantic Project. These data have gone through rigorous quality control (QC procedures so as to improve the quality and consistency of the data as much as possible. Secondary quality control, which involved objective study of data in order to quantify systematic differences in the reported values, was performed for the pertinent parameters in the CARINA data base. Systematic biases in the data have been tentatively corrected in the data products. The products are three merged data files with measured, adjusted and interpolated data of all cruises for each of the three CARINA regions (Arctic Mediterranean Seas, Atlantic and Southern Ocean. Ninety-eight cruises were conducted in the "Atlantic" defined as the region south of the Greenland-Iceland-Scotland Ridge and north of about 30° S. Here we report the details of the secondary QC which was done on the total dissolved inorganic carbon (TCO2 data and the adjustments that were applied to yield the final data product in the Atlantic. Procedures of quality control – including crossover analysis between stations and inversion analysis of all crossover data – are briefly described. Adjustments were applied to TCO2 measurements for 17 of the cruises in the Atlantic Ocean region. With these adjustments, the CARINA data base is consistent both internally as well as with GLODAP data, an oceanographic data set based on the WOCE Hydrographic Program in the 1990s, and is now suitable for accurate assessments of, for example, regional oceanic carbon inventories, uptake rates and model validation.

Transparent conductive Ga-doped ZnO films fabricated by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

2012-04-15

Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Remote plasma deposition of textured zinc oxide with focus on thin film solar cell applications : material properties, plasma processes and film growth

NARCIS (Netherlands)

Groenen, R.

2005-01-01

Simultaneously possessing transparency in the visible region, close to that of insulators, and electrical conductivity, close to that of metals, transparent conducting oxide (TCO) thin films form a highly attractive class of materials for a wide variety of applications like thin film solar cells,

Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki-Wook; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon, 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, 85, Munmu-ro, Goesan-eup, Goesan-gun, Chungbuk, 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of)

2016-05-05

We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 °C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11–22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11–22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11–22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. - Highlights: • Polarity control of ZnO film grown in m-/c-sapphire and semipolar GaN template. • Achievement of high quality nonpolar m-plane ZnO flims on semipolar (11–22) GaN template. • The simultaneous improvements of carrier concentration and mobility in the nonpolar ZnO TCO flims. • Nonpolar ZnO TCO increases current spreading length and light output power of semipolar GaN-LED.

Review of technetium chemistry research conducted at the University of Nevada Las Vegas

International Nuclear Information System (INIS)

Poineau, F.; Weck, P.F.; Forster, P.; Hartmann, T.; Mausolf, E.; Silva, G.W.C.; Czerwinski, K.R.; Rodriguez, E.E.; Sattelberger, A.P.; Jarvinen, G.D.; Cheetham, A.K.

2009-01-01

The chemistry of technetium is being explored at the University of Nevada Las Vegas. Our goal is to investigate both the applied and fundamental aspects of technetium chemistry, with a special emphasis on synthesis, separations, and materials science. The synthetic chemistry focuses on metal-metal multiple bonding, oxides and halides. Synthesis and characterizations of (n-Bu 4 N) 2 Tc 2 X 8 , Tc 2 (O 2 CCH 3 ) 4 X 2 (X = Cl, Br), TcO 2 , Bi 2 Tc 2 O 7 , Bi 3 TcO 8 , TcBr 3 and TcBr 4 have been performed. The applied chemistry is related to the behavior of Tc in the UREX process. Separation of U/Tc has been conducted using anion exchange resin and metallic Tc waste form synthesized and characterized. (author)

Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

International Nuclear Information System (INIS)

Berger, Jana; Roch, Teja; Correia, Stelio; Eberhardt, Jens; Lasagni, Andrés Fabián

2016-01-01

In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm"2 and 89 mJ/cm"2, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

Energy Technology Data Exchange (ETDEWEB)

Berger, Jana; Roch, Teja [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany); Correia, Stelio; Eberhardt, Jens [Bosch Solar Energy AG, August-Broemel-Str. 6, 99310 Arnstadt (Germany); Lasagni, Andrés Fabián, E-mail: andres_fabian.lasagni@tu-dresden.de [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany)

2016-08-01

In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm{sup 2} and 89 mJ/cm{sup 2}, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

Sonolytic Oxidation of Tc(IVO2nH2O Nanoparticles to Tc(VIIO4 in Aqueous Solution

Directory of Open Access Journals (Sweden)

M. Zakir

2010-04-01

Full Text Available Sonolysis of a hydrosol of TcO2nH2O was investigated in the Ar- or He- atmosphere. Colloidal TcO2nH2O nanoparticles were irradiated with a 200 kHz and 1.25 W/cm2 ultrasound. It was found that the TcO2nH2O colloids dispersed in an aqueous solution (under Ar or He atmosphere was completely dissolved by ultrasonic irradiation (200 kHz, 200 W. The original brownish black color of the suspension slowly disappeared leaving behind a colorless solution. This change suggests that oxidation of Tc(IV to Tc(VII takes place. The oxidation was almost complete during 30 minutes sonication time under argon atmosphere for initial concentration of 6.0E-5 M. Addition of t-butyl alcohol, an effective radical scavenger which readily reacts with OH radicals, supressed the dissolution of TcO2nH2O colloids. This reaction indicates that TcO2nH2O molecules are oxidized by OH radicals produced in cavitation bubbles.

Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

International Nuclear Information System (INIS)

Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

2016-01-01

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

Ultra-fast transient plasmonics using transparent conductive oxides

Science.gov (United States)

Ferrera, Marcello; Carnemolla, Enrico G.

2018-02-01

During the last decade, plasmonic- and metamaterial-based applications have revolutionized the field of integrated photonics by allowing for deep subwavelength confinement and full control over the effective permittivity and permeability of the optical environment. However, despite the numerous remarkable proofs of principle that have been experimentally demonstrated, few key issues remain preventing a widespread of nanophotonic technologies. Among these fundamental limitations, we remind the large ohmic losses, incompatibility with semiconductor industry standards, and largely reduced dynamic tunability of the optical properties. In this article, in the larger context of the new emerging field of all-dielectric nanophotonics, we present our recent progresses towards the study of large optical nonlinearities in transparent conducting oxides (TCOs) also giving a general overview of the most relevant and recent experimental attainments using TCO-based technology. However, it is important to underline that the present article does not represent a review paper but rather an original work with a broad introduction. Our work lays in a sort of ‘hybrid’ zone in the middle between high index contrast systems, whose behaviour is well described by applying Mie scattering theory, and standard plasmonic elements where optical modes originate from the electromagnetic coupling with the electronic plasma at the metal-to-dielectric interface. Beside remaining in the context of plasmonic technologies and retaining all the fundamental peculiarities that promoted the success of plasmonics in the first place, our strategy has the additional advantage to allow for large and ultra-fast tunability of the effective complex refractive index by accessing the index-near-zero regime in bulk materials at telecom wavelength.

Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

Directory of Open Access Journals (Sweden)

Salvatore Sanzaro

2016-06-01

Full Text Available Transparent conductive oxide (TCO layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs, were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188 °C and at fixed working pressure (1.4 Pa using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O2 was selectively injected close to the sample in a small percentage (Ar:O2 = 69 sccm:2 sccm. We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS and spectroscopic ellipsometry (SE analyses has shown that the incorporated host-atoms are Al3+ species in Zn2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was ~2%, as measured by energy dispersive X-ray (EDX spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of ~7 nm/min, exhibits high transmittance in the visible range (~85% and low resistivity values (~13 mΩ × cm. The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

Colloidal transparent conducting oxide nanocrystals: A new infrared ...

Indian Academy of Sciences (India)

2015-06-02

Jun 2, 2015 ... ITO being one of the most famous TCO in bulk and thin film, has also found ..... through a fully reversible electrochemical process. ... positioned as a working electrode in an electrochemical cell for active modulation of .... [15] N Ashcroft and D Mermin, Solid state physics, Thomson Learning (1976).

Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering

International Nuclear Information System (INIS)

Wang, Fei; Chen, Xin-liang; Geng, Xin-hua; Zhang, De-kun; Wei, Chang-chun; Huang, Qian; Zhang, Xiao-dan; Zhao, Ying

2012-01-01

Highlights: ► Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. ► The directly deposited HGZO thin films present rough crater-type surface morphology. ► Typical HGZO thin film exhibits a high electron mobility of 41.3 cm 2 /V s and a relative low sheet resistance of ∼7.0 Ω. ► These HGZO thin films have high optical transmittances in the visible and near infrared region (∼380–1100 nm). ► A gradient H 2 growth method for fabricating HGZO thin films has been proposed in magnetron sputtering process. - Abstract: The main purposes are to obtain high quality transparent conductive oxide (TCO) based on zinc oxide (ZnO) thin films with high optical transparency in the visible and near infrared spectral range, high electrical conductivity and good light-scattering capability to enhance the path of the light inside the Si-based thin film solar cells. Natively textured surface hydrogenated gallium-doped ZnO (HGZO) thin films have been deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. These natively textured HGZO thin films exhibit high optical transmittance (over 80%) in the visible and near infrared region (λ = 380–1100 nm) and excellent electrical properties. The optimized HGZO thin film with crater-type textured surface obtained at the hydrogen flow rate of ∼2.0 sccm exhibits a high electron mobility of 41.3 cm 2 /V s and a relatively low sheet resistance of ∼7.0 Ω. The influences of hydrogen flow rates on the surface morphology, electrical and optical properties of HGZO thin films were investigated in detail. In addition, we put forward a method of gradient H 2 growth technique for fabricating HGZO thin films so as to obtain rough surface structure with good light-scattering capability and high electrical conductivity. “Crater-like” surface feature size and optical transmittance

The effect of sodium bicarbonate and validation of beckman coulter AU680 analyzers for measuring total carbon dioxide (TCO2) concentrations in horse serum.

Science.gov (United States)

Dirikolu, Levent; Waller, Pamela; Waguespack, Mona Landry; Andrews, Frank Michael; Keowen, Michael Layne; Gaunt, Stephen David

2017-11-01

This study evaluated the usage of Beckman Coulter AU680 analyzers for measurement of TCO 2 in horse serum, and the effect of sodium bicarbonate administrations on serum TCO 2 levels in resting horses. Treatment of horses with sodium bicarbonate did not result in any adverse events. Mean TCO 2 concentration was significantly higher from 1 to 8 h in the sodium bicarbonate-treated horses compared to the untreated controls. Within an hour, administration of sodium bicarbonate increased the TCO 2 level from 31.5 ± -2.5 (SD) to 34.0 ± 2.65 (SD) mmol/L and at 2-8 h post-administration, the TCO 2 level was above the 36 mmol/L cut-off level. In all quality control analysis of Australian standard by Beckman Coulter AU680 analyzer, the instrument slightly over estimated the TCO 2 level but the values were in close agreement with mean TCO 2 level being 38.03 with ± 0.87 mmol/L (SD). Expanded uncertainty was calculated using different levels of confidence interval. Based on 99.5% confidence interval using 0.805% expanded uncertainty using mean measured concentration of 38.05 mmol/L, it was estimated that any race samples TCO 2 level higher than 38.5 mmol/L will be indicative of sodium bicarbonate administration using Beckman Coulter AU680 analyzer in Louisiana.

Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

International Nuclear Information System (INIS)

Shirahata, Takahiro; Kawaharamura, Toshiyuki; Fujita, Shizuo; Orita, Hiroyuki

2015-01-01

Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10"−"4 Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac)_2], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH_3 to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10"−"3 Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac)_2] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10"−"3 Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

2015-12-31

Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Boltz, Janika

2011-12-12

Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

ZnO transparent conductive oxide for thin film silicon solar cells

Science.gov (United States)

Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

2010-03-01

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

Kostenorientiertes Controlling von E-Learning-Plattformen mit dem TCO-Konzept - Methodische Grundlagen, Softwareunterstützung und Entwicklungsperspektiven

Directory of Open Access Journals (Sweden)

Jan vom Brocke

2007-07-01

Full Text Available Zur administrativen Unterstützung von Lehr- und Lernprozessen werden E-Learning-Plattformen eingesetzt, die auf der Grundlage des Internet Funktionen zur Distribution von Lehr- und Lernmaterialien und zur Kommunikation zwischen Lehrenden und Lernenden anbieten. Zahlreiche wissenschaftliche Beiträge und Marktstudien beschäftigen sich mit der multikriteriellen Evaluation dieser Softwareprodukte zur informatorischen Fundierung strategischer Investitionsentscheidungen. Demgegenüber werden Instrumente zum kostenorientierten Controlling von E-Learning-Plattformen allenfalls marginal thematisiert. Dieser Beitrag greift daher das Konzept der Total Cost of Ownership (TCO auf, das einen methodischen Ansatzpunkt zur Schaffung von Kostentransparenz von E-Learning-Plattformen bildet. Aufbauend auf den konzeptionellen Grundlagen werden Problembereiche und Anwendungspotenziale für das kostenorientierte Controlling von LMS identifiziert. Zur softwaregestützten Konstruktion und Analyse von TCO-Modellen wird das Open Source-Werkzeug TCO-Tool eingeführt und seine Anwendung anhand eines synthetischen Fallbeispiels erörtert. Abschließend erfolgt die Identifikation weiterführender Entwicklungsperspektiven des TCO-Konzepts im Kontext des E-Learning. Die dargestellte Thematik ist nicht nur von theoretischem Interesse, sondern adressiert auch den steigenden Bedarf von Akteuren aus der Bildungspraxis nach Instrumenten zur informatorischen Fundierung von Investitions- und Desinvestitionsentscheidungen im Umfeld des E-Learning.

Epitaxial Sb-doped SnO{sub 2} and Sn-doped In{sub 2}O{sub 3} transparent conducting oxide contacts on GaN-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Tsai, Min-Ying [Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (United States); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Materials Department, University of California, Santa Barbara, CA 93106 (United States); Paul-Drude-Insitut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, James S. [Materials Department, University of California, Santa Barbara, CA 93106 (United States)

2016-04-30

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO{sub 2} (ATO) and (111)-oriented, cubic Sn-doped In{sub 2}O{sub 3} (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO{sub Domain1}[‐ 211]|| ITO{sub Domain2}[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10{sup −} {sup 3} Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga{sub 2}O{sub 3} interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10{sup −4} Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO{sub 2}:Sb (ATO) and In{sub 2}O{sub 3}:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short

Solubility study of Tc(IV) oxides

International Nuclear Information System (INIS)

Liu, D.J.; Fan, X.H.

2005-01-01

The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under oxidizing conditions technetium exists as the anionic species TcO 4 - whereas under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 ·nH 2 O. Hence, the mobility of Tc(IV) in reducing groundwater may be limited by the solubility of TcO 2 ·nH 2 O under these conditions. Due to this fact it is important to investigate the solubility of TcO 2 ·nH 2 O. The solubility determines the release of radionuclides from waste form and is used as a source term in radionuclide migration analysis in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2 + . The solubility of Tc(IV) oxide has been determined in simulated groundwater and redistilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and redistilled water is about (1.49-1.86) x 10 -9 mol/(L·d) under aerobic conditions, but Tc(IV) in simulated groundwater and redistilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and redistilled water is equal on the whole after centrifugation or ultrafiltration. The

Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

Science.gov (United States)

Zhang, Lei

Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

Science.gov (United States)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

En route to the conductivity bottleneck in p-type CuCr1-xMxO2-ySy (M = Li, Mg)

Science.gov (United States)

Mandal, P.; Mazumder, N.; Akhtar, A. J.; Roy, R.; Chattopadhyay, K. K.

2017-05-01

We extend our material design concept [P. Mandal et al. J. Phys. D: Appl. Phys. 49, 275109, (2016); N. Mazumder et al. J. Phys. Chem. Lett. 4, 3539, (2013)] further aiming to overcome the conductivity bottleneck (1 Scm-1) in p-type transparent conducting oxide (TCO). In this work, we execute the strategy of simultaneous cationic-anionic hole doping in the prototype p-TCO CuCrO2. CuCr1-xMxO2-ySy (M = Li, Mg) is prepared by solid state heating at 1150 °C. Using Rietveld analysis, the presence of Mgcr•, Licr • and SO×areconfirmed and quantified. The diffuse reflectance (DR) spectra are acquired to determine the dominant optical gap (˜ 3.5 eV) and found to be affected little upon site selective hole doping. From temperature dependence (80 - 300 K) of DC conductivity (σdc), (Licr •+SO×)dopingcan be identified to be the more plausible alternative to reach the bottleneck threshold compared to (Mgcr •+SO×) albeit of smaller σdc at 300 K.

Dye-sensitized solar cell based on AZO/Ag/AZO multilayer transparent conductive oxide film

Energy Technology Data Exchange (ETDEWEB)

Qi, Jin-He; Li, Ying [School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Duong, Thanh-Tung; Choi, Hyung-Jin [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon (Korea, Republic of)

2013-04-15

Highlights: ► AZO/Ag/AZO (AAA) multilayer was used for working electrode of DSSC cell. ► The 100 nm-thick Nb-doped TiO{sub 2} layer showed a good blocking effect. ► The DSSC cell by AAA TCO material showed the highest efficiency of about 3.25%. -- Abstract: Niobium-doped TiO{sub 2} blocking layer and Al-doped ZnO (AZO)/Ag/AZO (AAA) TCO layers were grown onto glass substrate using pulsed laser deposition (PLD) and direct current (dc)/radio-frequency (rf) sputtering at room temperature, respectively for dye-sensitized solar cell (DSSC) applications. The 100 nm-thick NTO layer showed a blocking effect for the oxygen diffusion into AAA layer and for the recombination of the electrons. The DSSC cell composed of the NTO (100 nm)/AAA (400 nm) showed the highest photo-electrical efficiency of about 3.25%. An insertion of aluminum foil between serrated clip and AAA (100 nm) TCO improved a photo-conversion efficiency of the DSSC.

Dye-sensitized solar cell based on AZO/Ag/AZO multilayer transparent conductive oxide film

International Nuclear Information System (INIS)

Qi, Jin-He; Li, Ying; Duong, Thanh-Tung; Choi, Hyung-Jin; Yoon, Soon-Gil

2013-01-01

Highlights: ► AZO/Ag/AZO (AAA) multilayer was used for working electrode of DSSC cell. ► The 100 nm-thick Nb-doped TiO 2 layer showed a good blocking effect. ► The DSSC cell by AAA TCO material showed the highest efficiency of about 3.25%. -- Abstract: Niobium-doped TiO 2 blocking layer and Al-doped ZnO (AZO)/Ag/AZO (AAA) TCO layers were grown onto glass substrate using pulsed laser deposition (PLD) and direct current (dc)/radio-frequency (rf) sputtering at room temperature, respectively for dye-sensitized solar cell (DSSC) applications. The 100 nm-thick NTO layer showed a blocking effect for the oxygen diffusion into AAA layer and for the recombination of the electrons. The DSSC cell composed of the NTO (100 nm)/AAA (400 nm) showed the highest photo-electrical efficiency of about 3.25%. An insertion of aluminum foil between serrated clip and AAA (100 nm) TCO improved a photo-conversion efficiency of the DSSC

129I- and 99TcO4-scavengers for low level radioactive waste backfills

International Nuclear Information System (INIS)

Balsley, S.D.; Brady, P.V.; Krumhansl, J.L.; Anderson, H.L.

1997-03-01

Minimization of 129 I - and 99 TcO 4 - transport to the biosphere is critical to the success of low level radioactive waste (LLRW) storage facilities. Here we experimentally identify and classify optimal sorbent materials for inclusion in LLRW backfills. For low pH conditions (pH 4-5), Cu-sulfides and possibly imogolite-rich soils provide K d 's (surface-solution partition coefficients) of roughly 10 3 ml g -1 for iodide, and 10 2 ml g -1 for technetium. At near neutral pH, hydrotalcites, Cu-oxides, Cu-sulfides and lignite coal possess K d 's on the order of 10 2 ml g -1 for both iodine and technetium. At high pH (pH > 10), such as might occur in a cementitious LLRW facility, calcium monosulfate aluminate K d 's are calculated to be roughly 10 2 ml g -1 for both iodine and technetium

Reversible solid oxide fuel cells (R-SOFCs) with chemically stable proton-conducting oxides

KAUST Repository

Bi, Lei

2015-07-01

Proton-conducting oxides offer a promising way of lowering the working temperature of solid oxide cells to the intermediate temperate range (500 to 700. °C) due to their better ionic conductivity. In addition, the application of proton-conducting oxides in both solid oxide fuel cells (SOFCs) and sold oxide electrolysis cells (SOECs) provides unique advantages compared with the use of conventional oxygen-ion conducting conductors, including the formation of water at the air electrode site. Since the discovery of proton conduction in some oxides about 30. years ago, the development of proton-conducting oxides in SOFCs and SOECs (the reverse mode of SOFCs) has gained increased attention. This paper briefly summarizes the development in the recent years of R-SOFCs with proton-conducting electrolytes, focusing on discussing the importance of adopting chemically stable materials in both fuel cell and electrolysis modes. The development of electrode materials for proton-conducting R-SOFCs is also discussed. © 2015 Elsevier B.V.

TiO{sub 2} films obtained by microwave-activated chemical-bath deposition used to improve TiO{sub 2}-conducting glass contact

Energy Technology Data Exchange (ETDEWEB)

Zumeta, I.; Gonzalez, B. [Institute for Material Science and Technology, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba); Ayllon, J.A.; Domenech, X. [Chemistry Department, Autonomous University of Barcelona, 08290 Cerdanyola del Valles (Spain); Vigil, E. [Institute for Material Science and Technology, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba); Physics Faculty, University of Havana, Colina Universitaria, Ciudad Habana 10 400 (Cuba)

2009-10-15

In traditional solar cells, metal-semiconductor contacts used to extract photogenerated carriers are very important. In dye-sensitized solar cells (DSSC) not much attention has been given to contact between the TiO{sub 2} and the transparent conducting glass (TCO), which is used instead of a metal contact to extract electrons. TiO{sub 2} layers obtained by microwave-activated chemical-bath deposition (MW-CBD) are proposed to improve TiO{sub 2} contact to conducting glass. Spectra of incident photon to current conversion efficiency (IPCE) are obtained for two-photoelectrode TiO{sub 2} photoelectrochemical cells. IPCE spectra show higher values when TiO{sub 2} double layer photoelectrodes are used. In these, the first layer or contacting layer is made by MW-CBD. Best results are obtained for double layer photoelectrodes on FTO (SnO{sub 2}:F) as conducting oxide substrate. Modeling of IPCE spectra reveals the importance of electrical contact and electron extraction rate at the TiO{sub 2}/TCO interface. (author)

Electrical conductivity of uranium-antimony oxide catalysts

International Nuclear Information System (INIS)

Golunski, S.E.; Nevell, T.G.; Hucknall, D.J.

1985-01-01

The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO 5 have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb 3 O 10 together with small proportions of Sb 2 O 4 and USbO 5 ) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO 5 . Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO 5 in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation. (author)

Electrical conductivity of uranium-antimony oxide catalysts

Energy Technology Data Exchange (ETDEWEB)

Golunski, S.E.; Nevell, T.G. (Portsmouth Polytechnic (UK)); Hucknall, D.J. (Southampton Univ. (UK). Dept. of Chemistry)

1985-05-01

The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO/sub 5/ have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb/sub 3/O/sub 10/ together with small proportions of Sb/sub 2/O/sub 4/ and USbO/sub 5/) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO/sub 5/. Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO/sub 5/ in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation.

Ultrabroadband terahertz characterization of highly doped ZnO and ITO

DEFF Research Database (Denmark)

Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

2015-01-01

The broadband complex conductivities of transparent conducting oxides (TCO), namely, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by using THz-TDS from 0.5 to 18 THz. The complex conductivities were accurately calculated using...

Transparent conducting oxide layers for thin film silicon solar cells

NARCIS (Netherlands)

Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

2009-01-01

Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

Highly Conductive One-Dimensional Manganese Oxide Wires by Coating with Graphene Oxides

Science.gov (United States)

Tojo, Tomohiro; Shinohara, Masaki; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Ahm Kim, Yoong; Endo, Morinobu

2012-10-01

Through coating with graphene oxides, we have developed a chemical route to the bulk production of long, thin manganese oxide (MnO2) nanowires that have high electrical conductivity. The average diameter of these hybrid nanowires is about 25 nm, and their average length is about 800 nm. The high electrical conductivity of these nanowires (ca. 189.51+/-4.51 µS) is ascribed to the homogeneous coating with conductive graphene oxides as well as the presence of non-bonding manganese atoms. The growth mechanism of the nanowires is theoretically supported by the initiation of morphological conversion from graphene oxide to wrapped structures through the formation of covalent bonds between manganese and oxygen atoms at the graphene oxide edge.

Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

Science.gov (United States)

Mondal, Praloy; Das, Debajyoti

2017-07-01

Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

Science.gov (United States)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

Directory of Open Access Journals (Sweden)

M. Melvin David Kumar

2014-01-01

Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

Reversible solid oxide fuel cells (R-SOFCs) with chemically stable proton-conducting oxides

KAUST Repository

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2015-01-01

Proton-conducting oxides offer a promising way of lowering the working temperature of solid oxide cells to the intermediate temperate range (500 to 700. °C) due to their better ionic conductivity. In addition, the application of proton

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Electrochromic devices; conducting polymers; PEDOT; indium tin oxide. Abstract. Conjugated polymers are promising materials for electrochromic device technology. Aqueous dispersions of poly(3,4-ethylenedioxythiophene)-(PEDOT) were spin coated onto transparent conducting oxide (TCO) coated glass substrates.

Oxide interfaces with enhanced ion conductivity

NARCIS (Netherlands)

Leon, C.; Santamaria, J.; Boukamp, Bernard A.

2013-01-01

The new field of nano-ionics is expected to yield large improvements in the performance of oxide-based energy generation and storage devices based on exploiting size effects in ion conducting materials. The search for novel materials with enhanced ionic conductivity for application in energy devices

Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Shin-Wei Liang

2013-01-01

Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

Nanoionics phenomenon in proton-conducting oxide: Effect of dispersion of nanosize platinum particles on electrical conduction properties

Directory of Open Access Journals (Sweden)

Hiroshige Matsumoto et al

2007-01-01

Full Text Available High-temperature proton conductors are oxides in which low-valence cations are doped as electron acceptors; the incorporation of water molecules into the oxides results in the formation of protonic defects that act as charge carriers. Since the protons thus formed are in equilibrium with other electronic defects, electrons and holes, the oxides possibly have different proton-conduction properties at and near boundaries when they are in contact with another phase. In this paper, we present our recent experimental observation of a marked change in the electrical properties of a proton conductor upon the dispersal of fine platinum particles in the oxide. First, the material shows extremely low electrical conductivity in comparison with the original proton-conducting perovskite. Second, there was a threshold amount of platinum at which such a drop in conductivity occurred. A percolation model is employed to explain these experimental results; the fine platinum particles dispersed in the proton-conducting oxide wears highly resistive skin that is formed due to shifts in defect equilibriums, which prevents ionic/electronic conduction. The experiments suggest that the ion-conducting properties of oxides can be varied by introducing interfaces at a certain density; nanoionics is a key to yielding enhanced and/or controlled ionic conduction in solids.

Sputter deposited gallium doped ZnO for TCO applications

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

2010-07-01

Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

Science.gov (United States)

Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

2017-10-01

Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

Conducting metal oxide and metal nitride nanoparticles

Science.gov (United States)

DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

2017-12-26

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

Multi-Material Front Contact for 19% Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Joop van Deelen

2016-02-01

Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Ionic Conductivity and its Role in Oxidation Reactions

Science.gov (United States)

Tamimi, Mazin Abdulla

In the field of solid oxide fuel cells (SOFCs), a substantial portion of research is focused on the ability of some oxide materials to conduct oxygen anions through their structure. For electrolytes, the benefits of improving bulk transport of ions are obvious: decrease the resistive losses of the electrolyte, and device efficiency goes up and higher power densities are possible. Even for cathode materials, better bulk ion transport leads to an increase in the oxygen exchange rate at the cathode surface, and the oxygen reduction reaction at the cathode surface is the rate limiting step for SOFC operation at intermediate temperatures (500-700ºC). As operation in this regime is a key step towards lowering the manufacturing cost and increasing the lifetime of devices, much effort is spent searching for new, more conductive materials, and analyzing existing materials to discover the structure-activity relationships that influence ionic conductivity. In the first part of this work, an overview is given of the neutron powder diffraction (NPD) techniques that are used to probe the structure of the materials in later parts. In the second part, NPD was used to analyze the structures of perovskite-type cathode materials, and show that increases in bulk conductivity led to increases in the surface oxygen exchange rate of these materials. In the final part, the methods used for SOFC cathode design were applied towards the design of oxide catalysts used for certain hydrocarbon partial oxidation reactions. The reactions studied follow the Mars van Krevelen mechanism, where oxygen atoms in the catalyst are consumed as part of the reaction and are subsequently replenished by oxygen in the gas phase. Similar to SOFC cathode operation, these processes include an oxygen reduction step, so it was hypothesized that increasing the ionic conductivity of the catalysts would improve their performance, just as it does for SOFC cathode materials. While the results are preliminary, the

Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

Science.gov (United States)

Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

2017-09-01

Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

Highly conducting and transparent sprayed indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

1998-03-01

Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

Diffusion of 99TcO4- in compacted bentonite: Effect of pH, concentration, density and contact time

International Nuclear Information System (INIS)

Xiangke Wang; Forschungszentrum Karlsruhe; Zuyi Tao

2004-01-01

In order to assess radionuclide diffusion and transport properties in compacted bentonite, the 'in-diffusion' method based on bentonite filled capillaries is used. The effect of 99 TcO 4 - concentration and pH value of the solution, the contact time and the dry density of compacted bentonite on the apparent diffusion coefficient (D a ) and on the distribution coefficient (K d ) values obtained from the capillary test was studied. The D a and K d values decrease with increasing of the bulk dry density of compacted bentonite. Ion exclusion influences the diffusion of 99 TcO 4 - 4 in the same substance. As compared to literature data, the K d values obtained from capillary tests are in most cases lower than those from batch tests, the difference between the two K d values is a strong function of dry density of the compacted bentonite. (author)

Conductive oxide cantilever for cryogenic nano-potentiometry

International Nuclear Information System (INIS)

Hiroya, Tsutomu; Inagaki, Katsuhiko; Tanda, Satoshi; Tsuneta, Taku; Yamaya, Kazuhiko

2003-01-01

Nanoscale electrical transport properties have attracted attentions because of new phenomena such as ballistic transport, quantized resistance, and Coulomb blockade. For measurement of nanoscale resistance, we have been developing a cryogenic atomic force microscope that can operate at 1.8 K. To use it as an electrode, we coated the cantilever with conductive oxides of TiO and indium tin oxide (ITO). We verified that TiO and ITO thin films remain conductive even at 4.2 K. Also we measured I-V characteristics of the tip-sample contact with a standard sample of NbSe 2 single crystal, and found that the conductive coats were not lost under large stresses due to the tip-sample contact. Moreover, we succeeded in obtaining a room temperature nano-potentiometry of a gold thin film with the ITO coated cantilever. In conclusion, the TiO and ITO coated cantilevers are applicable to cryogenic nano-potentiometry

Effect of oxygen intercalation on properties of sputtered CuYO 2 for ...

Indian Academy of Sciences (India)

Keywords. Transparent conducting oxide; RF sputtering; -type TCO. ... The positive sign of Seebeck coefficient (+274 VK-1) confirms the -type conductivity of the films. The optical bandgap of CuYO2 ... Bulletin of Materials Science | News.

Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Mondal, Praloy; Das, Debajyoti, E-mail: erdd@iacs.res.in

2017-07-31

Highlights: • ZnO:Ga film with perpetual c-axis orientation at low T{sub S} by RF magnetron sputtering. • High conductivity (200 S cm{sup −1}) and elevated transmission (∼93% at 500 nm) in nano-sheet like structure. • Si solar cell on ZnO:Ga with efficiency comparable to similar cell on U-type SnO{sub 2} coated Asahi glass. • Higher open circuit voltage and better fill factor with ZnO:Ga than SnO{sub 2}. - Abstract: Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I{sub 〈002〉}/I{sub 〈103〉} > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm{sup −1} and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO{sub 2} coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (V{sub OC}) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO{sub 2} counterpart, maintains a high transparency to the solar

Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers

Energy Technology Data Exchange (ETDEWEB)

Szabó, Zoltán; Baji, Zsófia [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary); Basa, Péter [Semilab Semiconductor Physics Laboratory Co. Ltd., Prielle K. u. 2, H-1117 Budapest (Hungary); Czigány, Zsolt; Bársony, István [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary); Wang, Hsin-Ying [Epistar corporation No 5, Li-hsin 5th Rd., Hsinchu Science Park, Hsinchu 300, Taiwan (China); Volk, János, E-mail: volk@mfa.kfki.hu [MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest (Hungary)

2016-08-30

Highlights: • Highly conductive, transparent GZO layers were deposited by ALD. • The ALD layers show superior thickness and sheet resistance homogeneity for 4” wafers. • A two-step ALD deposition technique was proposed and demonstrated to improve the quality of GZO/p-GaN interface. - Abstract: Highly conductive and uniform Ga doped ZnO (GZO) films were prepared by atomic layer deposition (ALD) as transparent conductive layers for InGaN/GaN LEDs. The optimal Ga doping concentration was found to be 3 at%. Even for 4” wafers, the TCO layer shows excellent homogeneity of film resistivity (0.8 %) according to Eddy current and spectroscopic ellipsometry mapping. This makes ALD a favourable technique over concurrent methods like MBE and PLD where the up-scaling is problematic. In agreement with previous studies, it was found that by an annealing treatment the quality of the GZO/p-GaN interface can be improved, although it causes the degradation of TCO conductivity. Therefore, a two-step ALD deposition technique was proposed and demonstrated: a “buffer layer” deposited and annealed first was followed by a second deposition step to maintain the high conductivity of the top layer.

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

International Nuclear Information System (INIS)

Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

2013-01-01

Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

Elaboration de couches minces d'oxydes transparents et conducteurs par spray cvd assiste par radiation infrarouge pour applications photovoltaÏques

OpenAIRE

Garnier , Jérôme

2009-01-01

Materials like metallic oxides are both properties of electrical conductivity and good transparency in the visible range. They are called "Transparent Conductive Oxides", TCO. Nowadays, the most used of this material is the indium oxide doped with tin (ITO). Indium is scarce and expensive since the huge fiat screen industries demand on ITO, his priee is thus increasing a lot. Research is looking for a challenger like tin oxide or zinc oxide which are promising materials. Different techniques ...

Localized conductive patterning via focused electron beam reduction of graphene oxide

Energy Technology Data Exchange (ETDEWEB)

Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Kulkarni, Dhaval D.; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

2015-03-30

We report on a method for “direct-write” conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

Energy Technology Data Exchange (ETDEWEB)

Nebatti Ech-Chergui, Abdelkader

2011-07-29

spectra indicate that the red characteristic emission of TiO{sub 2}: Eu{sup 3+} due to electric dipole {sup 5}D{sub 0} {yields}{sup 7} F{sub 2} transition occurring after ultraviolet excitation is the strongest. The decay time of the phosphorescence after UV excitation with a Nd:YAG laser (355 nm, f=10Hz) is temperature dependent in the range from 200 C up to 400 C. Finally, it has been found that the lifetime show a significant dependency on europium concentration. The development of rutile phase of titanium dioxide films on stainless steel substrates as protective coatings were investigated. Generally the rutile phases of TiO{sub 2} thin films do not adhere well on stainless steel substrates. In order to improve the adhesion, stainless steel substrates were first coated with titanium films using cathodic vacuum arc deposition. Then these titanium coatings were partially transformed to the rutile phase of titanium dioxide by thermal oxidation. The presence of the rutile phase of titanium dioxide and metallic titanium were confirmed by XRD. Cavitation erosion was used for the first time to investigate the adhesion properties of these coatings. Cavitation erosion tests confirmed that rutile films with a Ti inter layer are well adherent to stainless steel substrates and protect the substrate from erosion. The total mass loss of the thermally oxidized samples of Ti coated stainless steel was found around 3.5 times lower than of the uncoated samples. (orig.)

Factors controlling the oxide ion conductivity of fluorite and perovskite structured oxides

DEFF Research Database (Denmark)

Mogensen, Mogens Bjerg; Lybye, D.; Bonanos, N.

2004-01-01

Many metal oxides of fluorite and perovskite related structures are oxide ion conductors, which have practical applications in devices such as oxygen sensors, solid oxide fuel cells (SOFC) and electrolysers. Several structural and thermodynamic parameters such as (1) critical radius of the pathway...... such parameters for fluorite and perovskite oxides by considering their sensitivities to the individual ionic radii. Based on experimental data available in the literature, it is argued that lattice distortion (lattice stress and deviation from cubic symmetry) due to ion radii mismatch determines the ionic...... conductivity to a very large extent, and that lattice distortion is of much greater importance than many other proposed parameters. In case of the perovskites, the charge of the B-site ion is also of major importance. (C) 2004 Published by Elsevier B.V....

Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

International Nuclear Information System (INIS)

Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

2016-01-01

In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm"2 V"−"1 s"−"1 and 2.8×10"1"7 cm"−"3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274–0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

Energy Technology Data Exchange (ETDEWEB)

Bi, Kedong, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie; Pettes, Michael T.; Shi, Li, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Matsushita, Satoshi; Akagi, Kazuo [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Goh, Munju [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Eunha-ri san 101, Bondong-eup, Wanju-gun, Jeolabuk-do 565-905 (Korea, Republic of)

2013-11-21

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m{sup −1} K{sup −1} near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion.

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

International Nuclear Information System (INIS)

Bi, Kedong; Weathers, Annie; Pettes, Michael T.; Shi, Li; Matsushita, Satoshi; Akagi, Kazuo; Goh, Munju

2013-01-01

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m −1  K −1 near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion

Electroplating of electrical circuitry on optoelectronic windows for thin film solar cells on foil

NARCIS (Netherlands)

Hovestad, A.; Rendering, H.; Peter, M.; Meinders, E.R.

2010-01-01

In many flexible electronic devices transparent conductive oxide (TCO) window layers are used for current collection. The trade-off between the electrical resistance and optical transmission of TCOs results in power losses. Increasing the electrical conductivity by combining metallic grids with TCOs

New lithium-ion conducting perovskite oxides related to (Li, La)TiO3

Indian Academy of Sciences (India)

Unknown

We describe the synthesis and lithium-ion conductivity of new perovskite-related oxides ... work on lithium-ion conducting perovskite oxides containing d0 cations. Keywords. ..... On the other hand, Nb/Ta compounds show a higher conductivity.

Thermal diffusivity and conductivity of thorium- uranium mixed oxides

Science.gov (United States)

Saoudi, M.; Staicu, D.; Mouris, J.; Bergeron, A.; Hamilton, H.; Naji, M.; Freis, D.; Cologna, M.

2018-03-01

Thorium-uranium oxide pellets with high densities were prepared at the Canadian Nuclear Laboratories (CNL) by co-milling, pressing, and sintering at 2023 K, with UO2 mass contents of 0, 1.5, 3, 8, 13, 30, 60 and 100%. At the Joint Research Centre, Karlsruhe (JRC-Karlsruhe), thorium-uranium oxide pellets were prepared using the spark plasma sintering (SPS) technique with 79 and 93 wt. % UO2. The thermal diffusivity of (Th1-xUx)O2 (0 ≤ x ≤ 1) was measured at CNL and at JRC-Karlsruhe using the laser flash technique. ThO2 and (Th,U)O2 with 1.5, 3, 8 and 13 wt. % UO2 were found to be semi-transparent to the infrared wavelength of the laser and were coated with graphite for the thermal diffusivity measurements. This semi-transparency decreased with the addition of UO2 and was lost at about 30 wt. % of UO2 in ThO2. The thermal conductivity was deduced using the measured density and literature data for the specific heat capacity. The thermal conductivity for ThO2 is significantly higher than for UO2. The thermal conductivity of (Th,U)O2 decreases rapidly with increasing UO2 content, and for UO2 contents of 60% and higher, the conductivity of the thorium-uranium oxide fuel is close to UO2. As the mass difference between the Th and U atoms is small, the thermal conductivity decrease is attributed to the phonon scattering enhanced by lattice strain due to the introduction of uranium in ThO2 lattice. The new results were compared to the data available in the literature and were evaluated using the classical phonon transport model for oxide systems.

Steam electrolysis by solid oxide electrolysis cells (SOECs) with proton-conducting oxides

KAUST Repository

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2014-01-01

Energy crisis and environmental problems caused by the conventional combustion of fossil fuels boost the development of renewable and sustainable energies. H2 is regarded as a clean fuel for many applications and it also serves as an energy carrier for many renewable energy sources, such as solar and wind power. Among all the technologies for H2 production, steam electrolysis by solid oxide electrolysis cells (SOECs) has attracted much attention due to its high efficiency and low environmental impact, provided that the needed electrical power is generated from renewable sources. However, the deployment of SOECs based on conventional oxygen-ion conductors is limited by several issues, such as high operating temperature, hydrogen purification from water, and electrode stability. To avoid these problems, proton-conducting oxides are proposed as electrolyte materials for SOECs. This review paper provides a broad overview of the research progresses made for proton-conducting SOECs, summarizing the past work and finding the problems for the development of proton-conducting SOECs, as well as pointing out potential development directions.

Steam electrolysis by solid oxide electrolysis cells (SOECs) with proton-conducting oxides.

Science.gov (United States)

Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2014-12-21

Energy crisis and environmental problems caused by the conventional combustion of fossil fuels boost the development of renewable and sustainable energies. H2 is regarded as a clean fuel for many applications and it also serves as an energy carrier for many renewable energy sources, such as solar and wind power. Among all the technologies for H2 production, steam electrolysis by solid oxide electrolysis cells (SOECs) has attracted much attention due to its high efficiency and low environmental impact, provided that the needed electrical power is generated from renewable sources. However, the deployment of SOECs based on conventional oxygen-ion conductors is limited by several issues, such as high operating temperature, hydrogen purification from water, and electrode stability. To avoid these problems, proton-conducting oxides are proposed as electrolyte materials for SOECs. This review paper provides a broad overview of the research progresses made for proton-conducting SOECs, summarizing the past work and finding the problems for the development of proton-conducting SOECs, as well as pointing out potential development directions.

Proton and oxide ion conductivity of doped LaScO3

DEFF Research Database (Denmark)

Lybye, D.; Bonanos, N.

1999-01-01

. At temperatures below 800 degrees C and low partial pressure of oxygen, proton conduction was dominant. Above this temperature, the ionic conductivity is dominated by oxide ion transport. The protonic transport number was estimated from the conductivities measured in dry and in water-moisturised gas. An isotope......The conductivity of La0.9Sr0.1Sc0.9Mg0.1O3 has been studied by impedance spectroscopy in controlled atmospheres. The material was found to be a mixed conductor with p-type conduction at high oxygen partial pressures and a combined proton and oxide ion conductor at low oxygen partial pressures...

Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

International Nuclear Information System (INIS)

Ali, Ahmad Hadi; Shuhaimi, Ahmad; Hassan, Zainuriah

2014-01-01

We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10 −3 Ω −1 , 8.4 × 10 −3 Ω −1 and 3.0 × 10 −5 Ω −1 , respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

Highly Conductive and Reliable Copper-Filled Isotropically Conductive Adhesives Using Organic Acids for Oxidation Prevention

Science.gov (United States)

Chen, Wenjun; Deng, Dunying; Cheng, Yuanrong; Xiao, Fei

2015-07-01

The easy oxidation of copper is one critical obstacle to high-performance copper-filled isotropically conductive adhesives (ICAs). In this paper, a facile method to prepare highly reliable, highly conductive, and low-cost ICAs is reported. The copper fillers were treated by organic acids for oxidation prevention. Compared with ICA filled with untreated copper flakes, the ICA filled with copper flakes treated by different organic acids exhibited much lower bulk resistivity. The lowest bulk resistivity achieved was 4.5 × 10-5 Ω cm, which is comparable to that of commercially available Ag-filled ICA. After 500 h of 85°C/85% relative humidity (RH) aging, the treated ICAs showed quite stable bulk resistivity and relatively stable contact resistance. Through analyzing the results of x-ray diffraction, x-ray photoelectron spectroscopy, and thermogravimetric analysis, we found that, with the assistance of organic acids, the treated copper flakes exhibited resistance to oxidation, thus guaranteeing good performance.

Ionic Conductance, Thermal and Morphological Behavior of PEO-Graphene Oxide-Salts Composites

Directory of Open Access Journals (Sweden)

Mohammad Saleem Khan

2015-01-01

Full Text Available Thin films composites of poly(ethylene oxide-graphene oxide were fabricated with and without lithium salts by solvent cast method. The ionic conductivity of these composites was studied at various concentrations of salt polymer-GO complexes and at different temperatures. The effects of temperature and graphene oxide concentration were measured from Arrhenius conductance plots. It is shown that the addition of salts in pure PEO increases conductance many times. The graphene oxide addition has enhanced the conductance approximately 1000 times as compared to that of pure PEO. The activation energies were determined for all the systems which gave higher values for pure PEO and the value decreased with the addition of LiClO4 and LiCl salts and further decreases with the addition of graphene oxide. The composite has also lowered the activation energy values which mean that incorporation of GO in PEO has decreased crystallinity and the amorphous region has increased the local mobility of polymer chains resulting in lower activation energies. SEM analysis shows uniform distribution of GO in polymer matrix. The thermal stability studies reveal that incorporation of GO has somewhat enhanced the thermal stability of the films.

Oxidized calmodulin kinase II regulates conduction following myocardial infarction: a computational analysis.

Directory of Open Access Journals (Sweden)

Matthew D Christensen

2009-12-01

Full Text Available Calmodulin kinase II (CaMKII mediates critical signaling pathways responsible for divergent functions in the heart including calcium cycling, hypertrophy and apoptosis. Dysfunction in the CaMKII signaling pathway occurs in heart disease and is associated with increased susceptibility to life-threatening arrhythmia. Furthermore, CaMKII inhibition prevents cardiac arrhythmia and improves heart function following myocardial infarction. Recently, a novel mechanism for oxidative CaMKII activation was discovered in the heart. Here, we provide the first report of CaMKII oxidation state in a well-validated, large-animal model of heart disease. Specifically, we observe increased levels of oxidized CaMKII in the infarct border zone (BZ. These unexpected new data identify an alternative activation pathway for CaMKII in common cardiovascular disease. To study the role of oxidation-dependent CaMKII activation in creating a pro-arrhythmia substrate following myocardial infarction, we developed a new mathematical model of CaMKII activity including both oxidative and autophosphorylation activation pathways. Computer simulations using a multicellular mathematical model of the cardiac fiber demonstrate that enhanced CaMKII activity in the infarct BZ, due primarily to increased oxidation, is associated with reduced conduction velocity, increased effective refractory period, and increased susceptibility to formation of conduction block at the BZ margin, a prerequisite for reentry. Furthermore, our model predicts that CaMKII inhibition improves conduction and reduces refractoriness in the BZ, thereby reducing vulnerability to conduction block and reentry. These results identify a novel oxidation-dependent pathway for CaMKII activation in the infarct BZ that may be an effective therapeutic target for improving conduction and reducing heterogeneity in the infarcted heart.

Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (Over-layered TCO on tempered glass for solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (kyoka class fukugo tomei doden kiban seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of over-layered TCO on tempered glass in fiscal 1994. (1) On the fabrication technology of heat-resistant over-layered TCO, thermal deformation of TCO substrates was studied by both experiment and numerical computation. The thermal deformation increased with carrier concentration. As the observation result on change in lattice strain of heated TCO films by high-temperature X-ray diffraction, lattice strain was largely affected by thermal expansion. (2) On development of the low-temperature heat treatment method of TCO films, a technological prospect was obtained for fabrication of low-resistance TCO films by heat treatment without strength deterioration of tempered TCO substrates. (3) On development of cost reduction technology, the large-area CVD equipment was devised on the basis of the inline tempering method which tempers substrate glass by air cooling after formation of SnO2 film as fabrication method of tempered TCO. The TCO substrate tempered by air cooling could endure the drop test of 227g and 1.5m. 5 figs., 1 tab.

Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

2016-01-29

Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

2006-01-01

The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

Directory of Open Access Journals (Sweden)

SUN Tao

2017-02-01

Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

A new sonochemical method for preparation of different ...

Indian Academy of Sciences (India)

CuInS2; solar cells; ultrasonic; semiconductors. ... paste was prepared by doctor's blade technique on the transparent conductive oxide (TCO). ... Kashan, Iran; Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box ...

Electronically conductive perovskite-based oxide nanoparticles and films for optical sensing applications

Science.gov (United States)

Ohodnicki, Jr., Paul R; Schultz, Andrew M

2015-04-28

The disclosure relates to a method of detecting a change in a chemical composition by contacting a electronically conducting perovskite-based metal oxide material with a monitored stream, illuminating the electronically conducting perovskite-based metal oxide with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The electronically conducting perovskite-based metal oxide has a perovskite-based crystal structure and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The electronically conducting perovskite-based metal oxide has an empirical formula A.sub.xB.sub.yO.sub.3-.delta., where A is at least a first element at the A-site, B is at least a second element at the B-site, and where 0.8perovskite-based oxides include but are not limited to La.sub.1-xSr.sub.xCoO.sub.3, La.sub.1-xSr.sub.xMnO.sub.3, LaCrO.sub.3, LaNiO.sub.3, La.sub.1-xSr.sub.xMn.sub.1-yCr.sub.yO.sub.3, SrFeO.sub.3, SrVO.sub.3, La-doped SrTiO.sub.3, Nb-doped SrTiO.sub.3, and SrTiO.sub.3-.delta..

Synthesis of oxide-free aluminum nanoparticles for application to conductive film

Science.gov (United States)

Jong Lee, Yung; Lee, Changsoo; Lee, Hyuck Mo

2018-02-01

Aluminum nanoparticles are considered promising as alternatives to conventional ink materials, replacing silver and copper nanoparticles, due to their extremely low cost and low melting temperature. However, a serious obstacle to realizing their use as conductive ink materials is the oxidation of aluminum. In this research, we synthesized the oxide-free aluminum nanoparticles using catalytic decomposition and an oleic acid coating method, and these materials were applied to conductive ink for the first time. The injection time of oleic acid determines the size of the aluminum nanoparticles by forming a self-assembled monolayer on the nanoparticles instead of allowing the formation of an oxide phase. Fabricated nanoparticles were analyzed by transmission electron microscopy and x-ray photoelectron spectroscopy to verify their structural and chemical composition. In addition, conductive inks made of these nanoparticles exhibit electrical properties when they are sintered at over 300 °C in a reducing atmosphere. This result shows that aluminum nanoparticles can be used as an alternative conductive material in printed electronics and can solve the cost issues associated with noble metals.

Thickness dependence of the structural and electrical properties of ...

Indian Academy of Sciences (India)

It has attracted much attention as transparent conducting oxide (TCO) films, as electrodes in solar cells [4,5], as gas sensors [6], in nanolaser and other ... scale and low cost and are widely compatible with microelectronics technology [10].

Interstitial pressure dependence of the thermal conductivity of some rare earth oxide powders

International Nuclear Information System (INIS)

Pradeep, P.

1997-01-01

Thermal transport properties of powdered materials depend upon interstitial gas pressure. The present study reports the experimental results for the effective thermal conductivity of three rare earth oxide powders viz. yttrium oxide, samarium oxide, and gadolinium oxide, at various interstitial pressures by using transient plane source (TPS) method. A theoretical model is also proposed for the interpretation of the variation of the effective thermal conductivity with interstitial gas pressure. Its validity is found to be good in low pressure range of 45 mm Hg to normal pressure when compared with the experimental results. Also an attempt has been made to calculate the variation of thermal conductivity with interstitial pressure in the high pressure range up to 2 kbar using the proposed model. (author)

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

International Nuclear Information System (INIS)

Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

2014-01-01

One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

A High Optical Transmittance and Low Cost Touch Screen without Patterning

Directory of Open Access Journals (Sweden)

SAMADZAMINI, K.

2017-02-01

Full Text Available Transparent Conducting Oxide (TCO materials such as Fluorine Tin Oxide (FTO and Indium Tin Oxide (ITO due to their optical and electrical properties are used in touch screens as electrodes and wires. This paper proposes a novel technique of using Electrical Resistivity Tomography (ERT method in order to produce touch screens without pattering. Unlike existing techniques, the proposed methodology employs a uniform TCO coated screen with a maximum optical transmittance to convert the touch point coordinates into side electrodes voltages. The performance of the proposed method is tested experimentally on a FTO coated glass with a sheet resistance of 20 ohms/sq. The proposed methodology is found to be less complicated and low cost, since no pattern or electrodes are implemented in the display area.

Bilayered Oxide thin films for transparent electrode application

Science.gov (United States)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Solar cells with gallium phosphide/silicon heterojunction

Science.gov (United States)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Effects of solid fission products forming dissolved oxide (Nd) and metallic precipitate (Ru) on the thermal conductivity of uranium base oxide fuel

International Nuclear Information System (INIS)

Kim, Dong-Joo; Yang, Jae-Ho; Kim, Jong-Hun; Rhee, Young-Woo; Kang, Ki-Won; Kim, Keon-Sik; Song, Kun-Woo

2007-01-01

The effects of solid fission products on the thermal conductivity of uranium base oxide nuclear fuel were experimentally investigated. Neodymium (Nd) and ruthenium (Ru) were added to represent the physical states of solid fission products such as 'dissolved oxide' and 'metallic precipitate', respectively. Thermal conductivity was determined on the basis of the thermal diffusivity, density and specific heat values. The effects of the additives on the thermal conductivity were quantified in the form of the thermal resistivity equation - the reciprocal of the phonon conduction equation - which was determined from the measured data. It is concluded that the thermal conductivity of the irradiated nuclear fuel is affected by both the 'dissolved oxide' and the 'metallic precipitate', however, the effects are in the opposite direction and the 'dissolved oxide' influences the thermal conductivity more significantly than that of the 'metallic precipitate'

Nanocrystal-polymer nanocomposite electrochromic device

Science.gov (United States)

Milliron, Delia; Runnerstrom, Evan; Helms, Brett; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2015-12-08

Described is an electrochromic nanocomposite film comprising a solid matrix of an oxide based material, the solid matrix comprising a plurality of transparent conducting oxide (TCO) nanostructures dispersed in the solid matrix and a lithium salt dispersed in the solid matrix. Also described is a near infrared nanostructured electrochromic device having a functional layer comprising the electrochromic nanocomposite film.

A variable electron beam and its irradiation effect on optical and ...

Indian Academy of Sciences (India)

heterojunction solar cells with a narrow band gap base and wide band gap win- ... When CdS film is deposited on a transparent conductive oxide (TCO)/glass sub ... CdS thin films were prepared using vacuum thermal evaporation method at a.

Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

Energy Technology Data Exchange (ETDEWEB)

Ali, Ahmad Hadi, E-mail: ahadi@uthm.edu.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia); Science Department, Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, Johor (Malaysia); Shuhaimi, Ahmad [Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur (Malaysia); Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia)

2014-01-01

We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10{sup −3} Ω{sup −1}, 8.4 × 10{sup −3} Ω{sup −1} and 3.0 × 10{sup −5} Ω{sup −1}, respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

International Nuclear Information System (INIS)

Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

2013-01-01

Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

DEFF Research Database (Denmark)

Pryds, Nini

2015-01-01

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

Science.gov (United States)

Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

2017-11-01

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conductive iron oxide minerals accelerate syntrophic cooperation in methanogenic benzoate degradation

Energy Technology Data Exchange (ETDEWEB)

Zhuang, Li; Tang, Jia; Wang, Yueqiang; Hu, Min; Zhou, Shungui, E-mail: sgzhou@soil.gd.cn

2015-08-15

Highlights: • Paddy soil contaminated with benzoate incubated with hematite and magnetite. • Iron oxides addition enhanced methanogenic benzoate degradation by 25–53%. • The facilitated syntrophy might involve direct interspecies electron transfer. • Bacillaceae, Peptococcaceae, and Methanobacterium are potentially involved. - Abstract: Recent studies have suggested that conductive iron oxide minerals can facilitate syntrophic metabolism of the methanogenic degradation of organic matter, such as ethanol, propionate and butyrate, in natural and engineered microbial ecosystems. This enhanced syntrophy involves direct interspecies electron transfer (DIET) powered by microorganisms exchanging metabolic electrons through electrically conductive minerals. Here, we evaluated the possibility that conductive iron oxides (hematite and magnetite) can stimulate the methanogenic degradation of benzoate, which is a common intermediate in the anaerobic metabolism of aromatic compounds. The results showed that 89–94% of the electrons released from benzoate oxidation were recovered in CH{sub 4} production, and acetate was identified as the only carbon-bearing intermediate during benzoate degradation. Compared with the iron-free controls, the rates of methanogenic benzoate degradation were enhanced by 25% and 53% in the presence of hematite and magnetite, respectively. This stimulatory effect probably resulted from DIET-mediated methanogenesis in which electrons transfer between syntrophic partners via conductive iron minerals. Phylogenetic analyses revealed that Bacillaceae, Peptococcaceae, and Methanobacterium are potentially involved in the functioning of syntrophic DIET. Considering the ubiquitous presence of iron minerals within soils and sediments, the findings of this study will increase the current understanding of the natural biological attenuation of aromatic hydrocarbons in anaerobic environments.

Electrochemically oxidized electronic and ionic conducting nanostructured block copolymers for lithium battery electrodes.

Science.gov (United States)

Patel, Shrayesh N; Javier, Anna E; Balsara, Nitash P

2013-07-23

Block copolymers that can simultaneously conduct electronic and ionic charges on the nanometer length scale can serve as innovative conductive binder material for solid-state battery electrodes. The purpose of this work is to study the electronic charge transport of poly(3-hexylthiophene)-b-poly(ethylene oxide) (P3HT-PEO) copolymers electrochemically oxidized with lithium bis(trifluoromethanesulfonyl) imide (LiTFSI) salt in the context of a lithium battery charge/discharge cycle. We use a solid-state three-terminal electrochemical cell that enables simultaneous conductivity measurements and control over electrochemical doping of P3HT. At low oxidation levels (ratio of moles of electrons removed to moles of 3-hexylthiophene moieties in the electrode), the electronic conductivity (σe,ox) increases from 10(-7) S/cm to 10(-4) S/cm. At high oxidation levels, σe,ox approaches 10(-2) S/cm. When P3HT-PEO is used as a conductive binder in a positive electrode with LiFePO4 active material, P3HT is electrochemically active within the voltage window of a charge/discharge cycle. The electronic conductivity of the P3HT-PEO binder is in the 10(-4) to 10(-2) S/cm range over most of the potential window of the charge/discharge cycle. This allows for efficient electronic conduction, and observed charge/discharge capacities approach the theoretical limit of LiFePO4. However, at the end of the discharge cycle, the electronic conductivity decreases sharply to 10(-7) S/cm, which means the "conductive" binder is now electronically insulating. The ability of our conductive binder to switch between electronically conducting and insulating states in the positive electrode provides an unprecedented route for automatic overdischarge protection in rechargeable batteries.

Quantum conductance of zigzag graphene oxide nanoribbons

International Nuclear Information System (INIS)

Kan, Zhe; Nelson, Christopher; Khatun, Mahfuza

2014-01-01

The electronic properties of zigzag graphene oxide nanoribbons (ZGOR) are presented. The results show interesting behaviors which are considerably different from the properties of the perfect graphene nanoribbons (GNRs). The theoretical methods include a Huckel-tight binding approach, a Green's function methodology, and the Landauer formalism. The presence of oxygen on the edge results in band bending, a noticeable change in density of states and thus the conductance. Consequently, the occupation in the valence bands increase for the next neighboring carbon atom in the unit cell. Conductance drops in both the conduction and valence band regions are due to the reduction of allowed k modes resulting from band bending. The asymmetry of the energy band structure of the ZGOR is due to the energy differences of the atoms. The inclusion of a foreign atom's orbital energies changes the dispersion relation of the eigenvalues in energy space. These novel characteristics are important and valuable in the study of quantum transport of GNRs

Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

Directory of Open Access Journals (Sweden)

Moulin Etienne

2015-01-01

Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

Science.gov (United States)

Franken, R. H.-J.

2006-09-01

With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

Ionic conductivity in oxide heterostructures: the role of interfaces

Directory of Open Access Journals (Sweden)

Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

2010-01-01

Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

Evolution of technetium speciation in reducing grout

Energy Technology Data Exchange (ETDEWEB)

Lukens, Wayne W.; Bucher, Jerome J.; Shuh, David K.; Edelstein,Norman M.

2003-11-24

Cementitious waste forms (CWFs) are an important component of the strategy to immobilize high-level nuclear waste resulting from plutonium production by the U.S. Department of Energy (DOE). Technetium (99Tc) is an abundant fission product of particular concern in CWFs due to the high solubility and mobility of pertechnetate, TcO4-, the stable form of technetium in aerobic environments. CWFs can more effectively immobilize 99Tc if they contain additives that reduce mobile TcO4- to immobile Tc(IV) species. Leaching of 99Tc from reducing CWFs that contain Tc(IV) is much slower than for CWFs containing TcO4-. Previous X-ray absorption fine structure (XAFS) studies showed that the Tc(IV) species were oxidized to TcO4- in reducing grout samples prepared on a laboratory scale. Whether the oxidizer was atmospheric O2 or NO3- in the waste simulant was not determined. In actual CWFs, rapid oxidation of Tc(IV) by NO3- would be a concern, whereas oxidation by atmospheric O2 would be of less concern due to the slow diffusion and reaction of O2 with the reducing CWF. To address this uncertainty, two series of reducing grouts were prepared using TcO4- containing waste simulants with and without NO3-. In the first series of samples, the TcO4- was completely reduced using Na2S, and the samples were placed in containers that permitted O2 diffusion. In these samples, all of the technetium was initially present as aTc(IV) sulfide compound, TcSx, which was characterized using extended X-ray absorption fine structure (EXAFS) spectroscopy, and is likely Tc2S7. The TcSx initially present in the grout samples was steadily oxidized over 4 years. In the second series of samples, all of the TcO4- was not initially reduced, and the grout samples were placed in airtight containers. In these samples, the remaining TcO4- continued to be reduced as the samples aged, presumably due to the presence of reducing blast furnace slag. When samples in the second series were exposed to atmosphere, the

Composite electrolyte with proton conductivity for low-temperature solid oxide fuel cell

Energy Technology Data Exchange (ETDEWEB)

Raza, Rizwan, E-mail: razahussaini786@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Department of Energy Technology, Royal Institute of Technology, KTH, Stockholm 10044 (Sweden); Ahmed, Akhlaq; Akram, Nadeem; Saleem, Muhammad; Niaz Akhtar, Majid; Ajmal Khan, M.; Abbas, Ghazanfar; Alvi, Farah; Yasir Rafique, M. [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Sherazi, Tauqir A. [Department of Chemistry, COMSATS Institute of Information Technology, Abbotabad 22060 (Pakistan); Shakir, Imran [Sustainable Energy Technologies (SET) center, College of Engineering, King Saud University, PO-BOX 800, Riyadh 11421 (Saudi Arabia); Mohsin, Munazza [Department of Physics, Lahore College for Women University, Lahore, 54000 (Pakistan); Javed, Muhammad Sufyan [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Zhu, Bin, E-mail: binzhu@kth.se, E-mail: zhubin@hubu.edu.cn [Department of Energy Technology, Royal Institute of Technology, KTH, Stockholm 10044 (Sweden); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Science/Faculty of Computer and Information, Hubei University, Wuhan, Hubei 430062 (China)

2015-11-02

In the present work, cost-effective nanocomposite electrolyte (Ba-SDC) oxide is developed for efficient low-temperature solid oxide fuel cells (LTSOFCs). Analysis has shown that dual phase conduction of O{sup −2} (oxygen ions) and H{sup +} (protons) plays a significant role in the development of advanced LTSOFCs. Comparatively high proton ion conductivity (0.19 s/cm) for LTSOFCs was achieved at low temperature (460 °C). In this article, the ionic conduction behaviour of LTSOFCs is explained by carrying out electrochemical impedance spectroscopy measurements. Further, the phase and structure analysis are investigated by X-ray diffraction and scanning electron microscopy techniques. Finally, we achieved an ionic transport number of the composite electrolyte for LTSOFCs as high as 0.95 and energy and power density of 90% and 550 mW/cm{sup 2}, respectively, after sintering the composite electrolyte at 800 °C for 4 h, which is promising. Our current effort toward the development of an efficient, green, low-temperature solid oxide fuel cell with the incorporation of high proton conductivity composite electrolyte may open frontiers in the fields of energy and fuel cell technology.

Composite electrolyte with proton conductivity for low-temperature solid oxide fuel cell

Science.gov (United States)

Raza, Rizwan; Ahmed, Akhlaq; Akram, Nadeem; Saleem, Muhammad; Niaz Akhtar, Majid; Sherazi, Tauqir A.; Ajmal Khan, M.; Abbas, Ghazanfar; Shakir, Imran; Mohsin, Munazza; Alvi, Farah; Javed, Muhammad Sufyan; Yasir Rafique, M.; Zhu, Bin

2015-11-01

In the present work, cost-effective nanocomposite electrolyte (Ba-SDC) oxide is developed for efficient low-temperature solid oxide fuel cells (LTSOFCs). Analysis has shown that dual phase conduction of O-2 (oxygen ions) and H+ (protons) plays a significant role in the development of advanced LTSOFCs. Comparatively high proton ion conductivity (0.19 s/cm) for LTSOFCs was achieved at low temperature (460 °C). In this article, the ionic conduction behaviour of LTSOFCs is explained by carrying out electrochemical impedance spectroscopy measurements. Further, the phase and structure analysis are investigated by X-ray diffraction and scanning electron microscopy techniques. Finally, we achieved an ionic transport number of the composite electrolyte for LTSOFCs as high as 0.95 and energy and power density of 90% and 550 mW/cm2, respectively, after sintering the composite electrolyte at 800 °C for 4 h, which is promising. Our current effort toward the development of an efficient, green, low-temperature solid oxide fuel cell with the incorporation of high proton conductivity composite electrolyte may open frontiers in the fields of energy and fuel cell technology.

Grids on TCO's for higly transparent materials with a resistivity below 1 Ohm/sq

NARCIS (Netherlands)

Deelen, J. van; Rendering, H.; Mannetje, H.H 't; Hovestad, A.

2011-01-01

Various transparent conducting materials are compared based on their transparency versus sheet resistance characteristics. At present, transparent conducting oxides (TCOs) are still superior in performance compared to various recent alternatives and can only be surpassed by the combination of TCOs

Structure and conductive properties of poly(ethylene oxide)/layered double hydroxide nanocomposite polymer electrolytes

International Nuclear Information System (INIS)

Liao, C.-S.; Ye, W.-B.

2004-01-01

The oligo(ethylene oxide) modified layered double hydroxide (LDH) prepared by template method was added as a nanoscale nucleating agent into poly(ethylene oxide) (PEO) to form PEO/OLDH nanocomposite electrolytes. The effects of OLDH addition on morphology and conductivities of nanocomposite electrolytes were studied using wide-angle X-ray diffractometer, polarized optical microscopy, differential scanning calorimetry and ionic conductivity measurement. The results show that the exfoliated morphology of nanocomposites is formed due to the surface modification of LDH layers with PEO matrix compatible oligo(ethylene oxide)s. The nanoscale dispersed OLDH layers inhibit the crystal growth of PEO crystallites and result in a plenty amount of intercrystalline grain boundary within PEO/OLDH nanocomposites. The ionic conductivities of nanocomposite electrolytes are enhanced by three orders of magnitude compared to the pure PEO polymer electrolytes at ambient temperature. It can be attributed to the ease transport of Li + along intercrystalline amorphous phase. This novel nanocomposite electrolytes system with high conductivities will be benefited to fabricate the thin-film type of Li-polymer secondary battery

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Electrical Properties of Conductive Cotton Yarn Coated with Eosin Y Functionalized Reduced Graphene Oxide.

Science.gov (United States)

Kim, Eunju; Arul, Narayanasamy Sabari; Han, Jeong In

2016-06-01

This study reports the fabrication and investigation of the electrical properties of two types of conductive cotton yarns coated with eosin Y or eosin B functionalized reduced graphene (RGO) and bare graphene oxide (GO) using dip-coating method. The surface morphology of the conductive cotton yarn coated with reduced graphene oxide was observed by Scanning Electron Microscope (SEM). Due to the strong electrostatic attractive forces, the negatively charged surface such as the eosin Y functionalized reduced graphene oxide or bare GO can be easily coated to the positively charged polyethyleneimine (PEI) treated cotton yarn. The maximum current for the conductive cotton yarn coated with eosin Y functionalized RGO and bare GO with 20 cycles repetition of (5D + R) process was found to be 793.8 μA and 3482.8 μA. Our results showed that the electrical conductivity of bare GO coated conductive cotton yarn increased by approximately four orders of magnitude with the increase in the dipping cycle of (5D+R) process.

Proton dynamics in oxides: insight into the mechanics of proton conduction from quasielastic neutron scattering.

Science.gov (United States)

Karlsson, Maths

2015-01-07

This article is concerned with the use of quasielastic neutron scattering as a technique for investigation of the dynamical properties of proton conducting oxides. Currently, the main interest in these materials comes from their promise as electrolytes in future electrochemical devices and particularly through their use as electrolytes in next-generation, intermediate-temperature, fuel cells. However, the realization of such devices depends critically on the development of new, more highly proton conducting oxides. Such a development depends on increasing the current understanding of proton conduction in oxides and for this purpose quasielastic neutron scattering is an important mean. The aim of this article is to introduce the non-specialist reader to the basic principles of quasielastic neutron scattering, its advantages and disadvantages, to summarize the work that has been done on proton conducting oxides using this technique, as well as to discuss future opportunities within this field of research.

Electrochromic nanocomposite films

Science.gov (United States)

Milliron, Delia; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2018-04-10

The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

Coupling ultraviolet light and ultrasound irradiation with Conductive-Diamond Electrochemical Oxidation for the removal of progesterone

International Nuclear Information System (INIS)

Vidales, María J. Martín de; Barba, Silvia; Sáez, Cristina; Cañizares, Pablo; Rodrigo, Manuel A.

2014-01-01

Highlights: • Single sonolysis and photolysis technologies entail a slight progesterone removal and nil mineralization. • Synergistic effects of irradiating UV light and US are clearly observed in the oxidation rate. • The energy required by CDSEO and CDSPEO prevents against their application. • CDSEO mainly favors the mass transfer of organics to the conductive-diamond surface. • CDPEO promotes the formation of radicals in the bulk solution. - Abstract: This work focusses on the improvement of the efficiency of Conductive Diamond Electrochemical Oxidation (CDEO) by coupling US and UV irradiation in the degradation of progesterone from wastewater. Results show that CDEO is a promising technology for the degradation of progesterone, just the opposite of that observed for single sonolysis and photolysis technologies, which only entail a slight removal of progesterone and nil mineralization. Coupling UV light and US irradiations with CDEO seems to have a very positive effect, improving results obtained by single CDEO very significantly. Conductive Diamond Sono Electrochemical Oxidation (CDSEO) mainly seems to improve the transfer of pollutants to the conductive-diamond surface, while Conductive Diamond Photo Electrochemical Oxidation (CDPEO) seems to promote the formation of radicals from oxidants produced electrochemically. Soft oxidation conditions are obtained with the single application of both irradiation technologies, whereas an efficient mineralization is attained with CDEO, CDSEO, CDPEO and Conductive Diamond Sono-Photo Electrochemical Oxidation (CDSPEO). However, the high energy demands of US irradiation technologies advices against the use of CDSEO and CDSPEO

Substrate and p-layer effects on polymorphous silicon solar cells

Directory of Open Access Journals (Sweden)

Abolmasov S.N.

2014-07-01

Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

ZnO based transparent conductive oxide films with controlled type of conduction

Energy Technology Data Exchange (ETDEWEB)

Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

2014-11-28

The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

Measurement of thermal conductivity of the oxide coating on autoclaved monel-400

International Nuclear Information System (INIS)

Dua, A.K.; George, V.C.; Agarwala, R.P.

1982-01-01

Thermal conductivity of the oxide coating on monel-400 has been measured by a direct method. The oxide coating is applied on an electrically conducting wire having stable characteristics. The wire is placed in a constant temperature bath and a constant direct current is passed through it. The wire gets heated and loses heat to the surrounding. Temperature is measured by considering it as a resistance thermometer. A convection heat transfer coefficient, which is difficult to measure experimentally but is involved in the analytical expression for thermal conductivity, is eliminated by connecting a second uncoated wire of a noble metal having similar surface finish as that of the coated wire in series with it. The accuracy of the method is nearly six percent. However, the method is not easily applicable for very thin (thickness <= 1μ), highly porous coatings and materials having relatively large thermal conductivity. (M.G.B.)

Respiration sensor made from indium tin oxide-coated conductive fabrics

Science.gov (United States)

Kim, Sun Hee; Lee, Joo Hyeon; Jee, Seung Hyun

2015-02-01

Conductive fabrics with new properties and applications have been the subject of extensive research over the last few years, with wearable respiration sensors attracting much attention. Different methods can be used to obtain fabrics that are electrically conducting, an essential property for various applications. For instance, fabrics can be coated with conductive polymers. Here, indium tin oxide (ITO)-coated conductive fabrics with cross-linked polyvinyl alcohol (C-PVA) were prepared using a doctor-blade. The C-PVA was employed in the synthesis to bind ITO on the fabrics with the highest possible mechanical strength. The feasibility of a respiration sensor prepared using the ITO-coated conductive fabric was investigated. The ITO-coated conductive fabric with the C-PVA was demonstrated to have a high potential for use in respiration sensors.

The electronic conduction of glass and glass ceramics containing various transition metal oxides

International Nuclear Information System (INIS)

Yoshida, T.; Matsuno, Y.

1980-01-01

Nb 2 O 5 -V 2 O 5 -P 2 O 5 glasses containing only Group Va oxides have been investigated to elucidate their electronic conduction and structure, as compared with other glasses obtained by the addition of various transition metal oxides to vanadium phosphate. The P 2 O 5 introduction for Nb 2 O 5 in this glass with the same amount of V 2 O 5 increased the conductivity about two times. Glass ceramics having high conductivity increased by two orders of magnitude and the activation energy for conduction decreased from about 0.5 to 0.2 eV. The crystals were confirmed to be (V,Nb) 2 O 5 and Nb phosphate, one of which was highly conductive and developed a pillar-like shape with a length of more than 20 μm. (orig.)

Conductive iron oxides accelerate thermophilic methanogenesis from acetate and propionate.

Science.gov (United States)

Yamada, Chihaya; Kato, Souichiro; Ueno, Yoshiyuki; Ishii, Masaharu; Igarashi, Yasuo

2015-06-01

Anaerobic digester is one of the attractive technologies for treatment of organic wastes and wastewater, while continuous development and improvements on their stable operation with efficient organic removal are required. Particles of conductive iron oxides (e.g., magnetite) are known to facilitate microbial interspecies electron transfer (termed as electric syntrophy). Electric syntrophy has been reported to enhance methanogenic degradation of organic acids by mesophilic communities in soil and anaerobic digester. Here we investigated the effects of supplementation of conductive iron oxides (magnetite) on thermophilic methanogenic microbial communities derived from a thermophilic anaerobic digester. Supplementation of magnetite accelerated methanogenesis from acetate and propionate under thermophilic conditions, while supplementation of ferrihydrite also accelerated methanogenesis from propionate. Microbial community analysis revealed that supplementation of magnetite drastically changed bacterial populations in the methanogenic acetate-degrading cultures, in which Tepidoanaerobacter sp. and Coprothermobacter sp. dominated. These results suggest that supplementation of magnetite induce electric syntrophy between organic acid-oxidizing bacteria and methanogenic archaea and accelerate methanogenesis even under thermophilic conditions. Findings from this study would provide a possibility for the achievement of stably operating thermophilic anaerobic digestion systems with high efficiency for removal of organics and generation of CH4. Copyright © 2014 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

Analysis of sources of bulk conductivity change in saturated silica sand after unbuffered TCE oxidation by permanganate.

Science.gov (United States)

Hort, Ryan D; Revil, André; Munakata-Marr, Junko

2014-09-01

Time lapse resistivity surveys could potentially improve monitoring of permanganate-based in situ chemical oxidation (ISCO) of organic contaminants such as trichloroethene (TCE) by tracking changes in subsurface conductivity that result from injection of permanganate and oxidation of the contaminant. Bulk conductivity and pore fluid conductivity changes during unbuffered TCE oxidation using permanganate are examined through laboratory measurements and conductivity modeling using PHREEQC in fluid samples and porous media samples containing silica sand. In fluid samples, oxidation of one TCE molecule produces three chloride ions and one proton, resulting in an increase in fluid electrical conductivity despite the loss of two permanganate ions in the reaction. However, in saturated sand samples in which up to 8mM TCE was oxidized, at least 94% of the fluid conductivity associated with the presence of protons was removed within 3h of sand contact, most likely through protonation of silanol groups found on the surface of the sand grains. Minor conductivity effects most likely associated with pH-dependent reductive dissolution of manganese dioxide were also observed but not accounted for in pore-fluid conductivity modeling. Unaccounted conductivity effects resulted in an under-calculation of post-reaction pore fluid conductivity of 2.1% to 5.5%. Although small increases in the porous media formation factor resulting from precipitation of manganese dioxide were detected (about 3%), these increases could not be confirmed to be statistically significant. Both injection of permanganate and oxidation of TCE cause increases in bulk conductivity that would be detectable through time-lapse resistivity surveys in field conditions. Copyright © 2014 Elsevier B.V. All rights reserved.

CIGS cells with metallized front contact: Longer cells and higher efficiency

NARCIS (Netherlands)

Deelen, J. van; Frijters, C.

2017-01-01

We have investigated the benefit of a patterned metallization on top of a transparent conductive oxide in CIGS thin-film solar panels. It was found that cells with a grid have a higher efficiency compared to cells with only a TCO. This was observed for all cell lengths used. Furthermore, metallic

Comparative analysis of Dye-Sensitized Solar Cells (DSSC) having different nanocrystalline TiO2 layer structures

International Nuclear Information System (INIS)

Forcade, Fresnel; Gonzalez, Bernardo; Vigil, Elena; Jennings, James R.; Duna, Halina; Wang, Hongxia; Peter, Laurence M.

2009-01-01

Full text: Dye-sensitized solar cells (DSSC) are very prospective because of their low cost and comparatively not so low efficiency. This represents an advantage together with the innocuous character of the constituent materials. We study different types of DSSC. The procedure for making them has been the same except for the TiO 2 layer structure. This layer must be porous and nanocrystalline in order to increase light absorption by the sensitizer. On the other hand, this condition causes that the electrolyte contacts the transparent conducting oxide (TCO) underneath the TiO 2 originating undesired recombinations. Also the electrical contact of the Tio to the TCO depends on the technology used to deposit the TiO 2 . In order to avoid possible leakage currents caused by recombinations from the TCO to the electrolyte and improve TiO 2 -TCO electrical contact, a thin TiO 2 film is placed in between the porous TiO 2 layer and the TCO. Different structures are obtained using different technologies to obtain the thin TiO 2 film. These structures are analyzed from their volt-amperic characteristic, external quantum efficiency spectra and voltage decay observed when light is suppressed. Results obtained allow making recommendations regarding nanocrystalline TiO 2 structure to be used in DSSC. (author)

Methodologies For Characterising Mixed Conducting Oxides For Oxygen Membrane And SOFC Cathode Application

DEFF Research Database (Denmark)

Hendriksen, Peter Vang; Søgaard, Martin; Plonczak, Pawel

2012-01-01

Two methods for detailed characterization of the process of oxygen exchange between the gas phase and a mixed conducting solid oxide are discussed. First, the use of solid electrolyte probes for measuring the change in oxygen activity over the surface of a mixed conductor is presented and advanta......Two methods for detailed characterization of the process of oxygen exchange between the gas phase and a mixed conducting solid oxide are discussed. First, the use of solid electrolyte probes for measuring the change in oxygen activity over the surface of a mixed conductor is presented...

Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

International Nuclear Information System (INIS)

Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

2012-01-01

Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method

International Nuclear Information System (INIS)

Rajeeva, M. P.; Jayanna, H. S.; Ashok, R. L.; Naveen, C. S.; Bothla, V. Prasad

2014-01-01

Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C 6 H 8 O 7 ) to oxidizer (HNO 3 ) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO 2 powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO 2 nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO 2 nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO 2 nanomaterial decreases with the grain size at constant temperature

Assessment of laser ablation techniques in a-si technologies for position-sensor development

Science.gov (United States)

Molpeceres, C.; Lauzurica, S.; Ocana, J. L.; Gandia, J. J.; Urbina, L.; Carabe, J.

2005-07-01

Laser micromachining of semiconductor and Transparent Conductive Oxides (TCO) materials is very important for the practical applications in photovoltaic industry. In particular, a problem of controlled ablation of those materials with minimum of debris and small heat affected zone is one of the most vital for the successful implementation of laser micromachining. In particular, selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using Transparent Conductive Oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, Indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. The profiles of ablated grooves have been studied in order to determine the best processing conditions, i.e. laser pulse energy and wavelength, and to asses this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well defined ablation grooves having thicknesses in the order of 10 μm both in ITO and a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

Development of Graphene Nano-Platelet Based Counter Electrodes for Solar Cells

Directory of Open Access Journals (Sweden)

Iftikhar Ahmad

2015-09-01

Full Text Available Graphene has been envisaged as a highly promising material for various field emission devices, supercapacitors, photocatalysts, sensors, electroanalytical systems, fuel cells and photovoltaics. The main goal of our work is to develop new Pt and transparent conductive oxide (TCO free graphene based counter electrodes (CEs for dye sensitized solar cells (DSSCs. We have prepared new composites which are based on graphene nano-platelets (GNPs and conductive polymers such as poly (3,4-ethylenedioxythiophene poly(styrenesulfonate (PEDOT:PSS. Films of these composites were deposited on non-conductive pristine glass substrates and used as CEs for DSSCs which were fabricated by the “open cell” approach. The electrical conductivity studies have clearly demonstrated that the addition of GNPs into PEDOT:PSS films resulted in a significant increase of the electrical conductivity of the composites. The highest solar energy conversion efficiency was achieved for CEs comprising of GNPs with the highest conductivity (190 S/cm and n-Methyl-2-pyrrolidone (NMP treated PEDOT:PSS in a composite film. The performance of this cell (4.29% efficiency compares very favorably to a DSSC with a standard commercially available Pt and TCO based CE (4.72% efficiency in the same type of open DSSC and is a promising replacement material for the conventional Pt and TCO based CE in DSSCs.

Dielectric response and ac conductivity analysis of hafnium oxide nanopowder

International Nuclear Information System (INIS)

Karahaliou, P K; Xanthopoulos, N; Krontiras, C A; Georga, S N

2012-01-01

The dielectric response of hafnium oxide nanopowder was studied in the frequency range of 10 -2 -10 6 MHz and in the temperature range of 20-180 °C. Broadband dielectric spectroscopy was applied and the experimental results were analyzed and discussed using the electric modulus (M*) and alternating current (ac) conductivity formalisms. The analyses of the dc conductivity and electric modulus data revealed the presence of mechanisms which are thermally activated, both with almost the same activation energy of 1.01 eV. A fitting procedure involving the superposition of the thermally activated dc conductivity, the universal dielectric responce and the near constant loss terms has been used to describe the frequency evolution of the real part of the specific electrical conductivity. The conductivity master curve was obtained, suggesting that the time-temperature superposition principle applies for the studied system, thus implying that the conductivity mechanisms are temperature independent.

A perovskite oxide with high conductivities in both air and reducing atmosphere for use as electrode for solid oxide fuel cells

Science.gov (United States)

Lan, Rong; Cowin, Peter I.; Sengodan, Sivaprakash; Tao, Shanwen

2016-08-01

Electrode materials which exhibit high conductivities in both oxidising and reducing atmospheres are in high demand for solid oxide fuel cells (SOFCs) and solid oxide electrolytic cells (SOECs). In this paper, we investigated Cu-doped SrFe0.9Nb0.1O3-δ finding that the primitive perovskite oxide SrFe0.8Cu0.1Nb0.1O3-δ (SFCN) exhibits a conductivity of 63 Scm-1and 60 Scm-1 at 415 °C in air and 5%H2/Ar respectively. It is believed that the high conductivity in 5%H2/Ar is related to the exsolved Fe (or FeCu alloy) on exposure to a reducing atmosphere. To the best of our knowledge, the conductivity of SrFe0.8Cu0.1Nb0.1O3-δ in a reducing atmosphere is the highest of all reported oxides which also exhibit a high conductivity in air. Fuel cell performance using SrFe0.8Cu0.1Nb0.1O3-δ as the anode, (Y2O3)0.08(ZrO2)0.92 as the electrolyte and La0.8Sr0.2FeO3-δ as the cathode achieved a power density of 423 mWcm-2 at 700 °C indicating that SFCN is a promising anode for SOFCs.

Written-in conductive patterns on robust graphene oxide biopaper by electrochemical microstamping.

Science.gov (United States)

Hu, Kesong; Tolentino, Lorenzo S; Kulkarni, Dhaval D; Ye, Chunhong; Kumar, Satish; Tsukruk, Vladimir V

2013-12-16

The silk road: By employing silk fibroin as a binder between graphene oxide films and aluminum foil for a facile, highly localized reduction process, conductive paper is reinvented. The flexible, robust biographene papers have high toughness and electrical conductivity. This electrochemical written-in approach is readily applicable for the fabrication of conductive patterned papers with complex circuitries. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

Energy Technology Data Exchange (ETDEWEB)

Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

2012-01-01

Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

Oxide-ion and proton conducting electrolyte materials for clean energy applications: structural and mechanistic features.

Science.gov (United States)

Malavasi, Lorenzo; Fisher, Craig A J; Islam, M Saiful

2010-11-01

This critical review presents an overview of the various classes of oxide materials exhibiting fast oxide-ion or proton conductivity for use as solid electrolytes in clean energy applications such as solid oxide fuel cells. Emphasis is placed on the relationship between structural and mechanistic features of the crystalline materials and their ion conduction properties. After describing well-established classes such as fluorite- and perovskite-based oxides, new materials and structure-types are presented. These include a variety of molybdate, gallate, apatite silicate/germanate and niobate systems, many of which contain flexible structural networks, and exhibit different defect properties and transport mechanisms to the conventional materials. It is concluded that the rich chemistry of these important systems provides diverse possibilities for developing superior ionic conductors for use as solid electrolytes in fuel cells and related applications. In most cases, a greater atomic-level understanding of the structures, defects and conduction mechanisms is achieved through a combination of experimental and computational techniques (217 references).

Balancing activity, stability and conductivity of nanoporous core-shell iridium/iridium oxide oxygen evolution catalysts

Energy Technology Data Exchange (ETDEWEB)

Kim, Yong-Tae; Lopes, Pietro Papa; Park, Shin-Ae; Lee, A-Yeong; Lim, Jinkyu; Lee, Hyunjoo; Back, Seoin; Jung, Yousung; Danilovic, Nemanja; Stamenkovic, Vojislav; Erlebacher, Jonah; Snyder, Joshua; Markovic, Nenad M.

2017-11-13

The selection of oxide materials for catalyzing the Oxygen Evolution Reaction in acid-based electrolyzers must be guided by the proper balance between activity, stability and conductivity – a challenging mission of great importance for delivering affordable and environmentally friendly hydrogen. Here we report that the highly conductive nanoporous architecture of an iridium oxide shell on a metallic iridium core, formed through the fast dealloying of osmium from an Ir25Os75 alloy, exhibits an exceptional balance between oxygen evolution activity and stability as quantified by the Activity-Stability FactorASF. Based on this metric, the nanoporous Ir/IrO2 morphology of dealloyed Ir25Os75 shows a factor of ~30 improvement ASFrelative to conventional Ir-based oxide materials and a ~8 times improvement over dealloyed Ir25Os75 nanoparticles due to optimized stability and conductivity, respectively. We propose that the Activity-Stability FactorASF is the key “metric” for determining the technological relevance of oxide-based anodic water electrolyzer catalysts.

Simulation of technetium extraction behavior in UO2 (NO3)2-TcO4--HNO3-H2O/TBP-kerosene system

International Nuclear Information System (INIS)

Zhang Chunlong; He Hui; Chen Yanxin; Tang Hongbin

2012-01-01

By comparing and analyzing lots of reported data of technetium with the computing results, a modification function P(c 0 (U), t) was introduced to the existing distribution coefficient model of technetium, and a new mathematical model for simulating technetium extraction behavior in the system of UO 2 (NO 3 ) 2 -TcO 4 -HNO 3 -H 2 O/TBP- kerosene was established, as well as a computer program. The reliability of the program was verified by 179 sets of distribution coefficient data, and the results were found to agree well with experimental data. By comparing the reported data of technetium with the computing results, an evaluation was made to test the performance of the revised model. It turned out that the calculation results of the new model were more reliable than that of the one reported previously. The revised model and program can be the foundation to simulating technetium extraction behavior in the system of UO 2 (NO 3 ) 2 - TcO 4 - -HNO 3 -H 2 O/TBP-kerosene with the temperature scope from 10 to 60℃, U concentration from 0 to 280 g/L, and nitric acid concentration from 0.1 to 5 mol/L. (authors)

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

Science.gov (United States)

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-02-01

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

2018-03-01

Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

Transparent conductive zinc oxide basics and applications in thin film solar cells

CERN Document Server

Klein, Andreas; Rech, Bernd

2008-01-01

Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

International Nuclear Information System (INIS)

Carreras, Paz; Antony, Aldrin; Rojas, Fredy; Bertomeu, Joan

2011-01-01

Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn–In–Sn–O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 −4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

Low temperature formation of electrode having electrically conductive metal oxide surface

Science.gov (United States)

Anders, Simone; Anders, Andre; Brown, Ian G.; McLarnon, Frank R.; Kong, Fanping

1998-01-01

A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

Structure-Property Relationships in Amorphous Transparent Conducting Oxides

Science.gov (United States)

Moffitt, Stephanie Lucille

Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

Energy Technology Data Exchange (ETDEWEB)

Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

2012-06-01

The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

Science.gov (United States)

Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

2017-12-01

This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

Development of a tritium monitor combined with an electrochemical tritium pump using a proton conducting oxide

Energy Technology Data Exchange (ETDEWEB)

Tanaka, M. [National Institute for Fusion Science, Toki, Gifu (Japan); Sugiyama, T. [Nagoya University, Fro-cho, Chikusa-ku, Nagoya (Japan)

2015-03-15

The detection of low level tritium is one of the key issues for tritium management in tritium handling facilities. Such a detection can be performed by tritium monitors based on proton conducting oxide technique. We tested a tritium monitoring system composed of a commercial proportional counter combined with an electrochemical hydrogen pump equipped with CaZr{sub 0.9}In{sub 0.1}O{sub 3-α} as proton conducting oxide. The hydrogen pump operated at 973 K under electrolysis conditions using tritiated water vapor (HTO). The proton conducting oxide extracts tritium molecules (HT) from HTO and tritium concentration is measured by the proportional counter. The advantage of the proposed tritium monitoring system is that it is able to convert HTO into molecular hydrogen.

Solid-state ionics: Studies of lithium-conducting sulfide glasses and a superconducting oxide compound

International Nuclear Information System (INIS)

Ahn, Byung Tae.

1989-01-01

The first part of this work studies lithium-conducting sulfide glasses for battery applications, while the second part studies the thermodynamic properties of a superconducting oxide compound by using an oxide electrolyte. Lithium conducting glasses based on the SiS 2 -Li 2 S system are possible solid electrolytes for high-energy-density lithium batteries. The foremost requirement for solid electrolytes is that they should have high ionic conductivities. Unfortunately, most crystalline lithium conductors have low ionic conductivities at room temperature. However, glass ionic conductors show higher ionic conductivities than do crystalline forms of the same material. In addition to higher ionic conductivities, glasses appear to have several advantages over crystalline materials. These advantages include isotropic conductivity, absence of grain boundary effects, ease of glass forming, and the potential for a wide range of stability to oxidizing and reducing conditions. Using pyrolitic graphite-coated quartz ampoules, new ternary compounds and glasses in the SiS 2 -Li 2 S system were prepared. Several techniques were used to characterize the materials: powder x-ray diffraction, differential thermal analysis, differential scanning calorimetry, and AC impedance spectroscopy. The measured lithium conductivity of the sulfide glasses was one of the highest among the known solid lithium conductors. Measuring the equilibrium open circuit voltages assisted in determining the electrochemical stabilities of the ternary compounds and glasses with respect to pure Li. A solid-state ionic technique called oxygen coulometric titration was used to measure the thermodynamic stability, the oxygen stoichiometry, and the effects of the oxygen stoichiometry, and the effects of the oxygen stoichiometry and the cooling rate on superconductivity of the YBa 2 Cu 3 O 7-x compound were investigated

Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

International Nuclear Information System (INIS)

Li, Bao-jia; Huang, Li-jing; Ren, Nai-fei; Zhou, Ming

2014-01-01

Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO 2 )/FTO bilayer films. Large and densely arranged grains were observed on all TiO 2 /FTO bilayer films. The presence of TiO 2 tetragonal rutile phase in the TiO 2 /FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO 2 /FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10 −2 Ω −1 , higher than 1.78 × 10 −2 Ω −1 for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO 2 /FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10 −2 Ω −1 , indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurements

DEFF Research Database (Denmark)

Petersen, Christian Leth; Grey, Francois; Aono, M.

1997-01-01

We have investigated how the conductance of Si(100)-(2 x 1) and Si(111)-(7 x 7) surfaces change during exposure to molecular oxygen. A monotonic decrease in conductance is seen as the (100) surfaces oxidizes. In contract to a prior study, we propose that this change is caused by a decrease in sur...

Preparation and properties of highly conductive palmitic acid/graphene oxide composites as thermal energy storage materials

International Nuclear Information System (INIS)

Mehrali, Mohammad; Latibari, Sara Tahan; Mehrali, Mehdi; Indra Mahlia, Teuku Meurah; Cornelis Metselaar, Hendrik Simon

2013-01-01

PA/GO (palmitic acid/graphene oxide) as PCMs (phase change materials) prepared by vacuum impregnation method, have high thermal conductivity. The GO (graphene oxide) composite was used as supporting material to improve thermal conductivity and shape stabilization of composite PCM (phase change material). SEM (Scanning electronic microscope), FT-IR (Fourier transformation infrared spectroscope) and XRD (X-ray diffractometer) were applied to determine microstructure, chemical structure and crystalloid phase of palmitic acid/GO composites, respectively. DSC (Differential scanning calorimeter) test was done to investigate thermal properties which include melting and solidifying temperatures and latent heat. FT-IR analysis represented that the composite instruction of porous palmitic acid and GO were physical. The temperatures of melting, freezing and latent heats of the composite measured through DSC analysis were 60.45, 60.05 °C, 101.23 and 101.49 kJ/kg, respectively. Thermal cycling test showed that the form-stable composite PCM has good thermal reliability and chemical stability. Thermal conductivity of the composite PCM was improved by more than three times from 0.21 to 1.02. As a result, due to their acceptable thermal properties, good thermal reliability, chemical stability and great thermal conductivities, we can consider the prepared form-stable composites as highly conductive PCMs for thermal energy storage applications. - Highlights: • Novel composite PCM with high thermal conductivity and latent heat storage. • New thermal cycling test for thermal reliability of composite PCMs. • Increasing thermal conductivity of composite PCM with graphene oxide. • Increasing thermal stability of phase change material by adding graphene oxide

A high performance cathode for proton conducting solid oxide fuel cells

KAUST Repository

Wang, Zhiquan

2015-01-01

Intermediate temperature solid-oxide fuel cells (IT-SOFCs)), as one of the energy conversion devices, have attracted worldwide interest for their great fuel efficiency, low air pollution, much reduced cost and excellent longtime stability. In the intermediate temperature range (500-700°C), SOFCs based on proton conducting electrolytes (PSOFCs) display unique advantages over those based on oxygen ion conducting electrolytes. A key obstacle to the practical operation of past P-SOFCs is the poor stability of the traditionally used composite cathode materials in the steam-containing atmosphere and their low contribution to proton conduction. Here we report the identification of a new Ruddlesden-Popper-type oxide Sr3Fe2O7-δ that meets the requirements for much improved long-term stability and shows a superior single-cell performance. With a Sr3Fe2O7-δ-5 wt% BaZr0.3Ce0.5Y0.2O3-δ cathode, the P-SOFC exhibits high power densities (683 and 583 mW cm-2 at 700°C and 650°C, respectively) when operated with humidified hydrogen as the fuel and air as the cathode gas. More importantly, no decay in discharging was observed within a 100 hour test. © The Royal Society of Chemistry 2015.

Highly conductive grain boundaries in copper oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

2016-06-21

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

Ionic conductivity of metal oxides : an essential property for all-solid-state Lithium-ion batteries

NARCIS (Netherlands)

Chen, C.; Eichel, R.-A.; Notten, P.H.L.

2017-01-01

Essential progress has been made for adopting metal oxides (MeO) in various energy storage and energy conversion applications. Among these, utilizing MeO in Lithium-ions batteries (LIBs) seems to be one of the most promising applications. In particular, conductive Li-containing oxides or

Electrical conductivity of activated carbon-metal oxide nanocomposites under compression: a comparison study.

Science.gov (United States)

Barroso-Bogeat, A; Alexandre-Franco, M; Fernández-González, C; Macías-García, A; Gómez-Serrano, V

2014-12-07

From a granular commercial activated carbon (AC) and six metal oxide (Al2O3, Fe2O3, SnO2, TiO2, WO3 and ZnO) precursors, two series of AC-metal oxide nanocomposites were prepared by wet impregnation, oven-drying at 120 °C, and subsequent heat treatment at 200 or 850 °C in an inert atmosphere. Here, the electrical conductivity of the resulting products was studied under moderate compression. The influence of the applied pressure, sample volume, mechanical work, and density of the hybrid materials was thoroughly investigated. The DC electrical conductivity of the compressed samples was measured at room temperature by the four-probe method. Compaction assays suggest that the mechanical properties of the nanocomposites are largely determined by the carbon matrix. Both the decrease in volume and the increase in density were relatively small and only significant at pressures lower than 100 kPa for AC and most nanocomposites. In contrast, the bulk electrical conductivity of the hybrid materials was strongly influenced by the intrinsic conductivity, mean crystallite size, content and chemical nature of the supported phases, which ultimately depend on the metal oxide precursor and heat treatment temperature. The supported nanoparticles may be considered to act as electrical switches either hindering or favouring the effective electron transport between the AC cores of neighbouring composite particles in contact under compression. Conductivity values as a rule were lower for the nanocomposites than for the raw AC, all of them falling in the range of semiconductor materials. With the increase in heat treatment temperature, the trend is toward the improvement of conductivity due to the increase in the crystallite size and, in some cases, to the formation of metals in the elemental state and even metal carbides. The patterns of variation of the electrical conductivity with pressure and mechanical work were slightly similar, thus suggesting the predominance of the pressure

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

Science.gov (United States)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Spin and spinless conductivity in polypyrrole. Evidence for mixed-valence conduction

Energy Technology Data Exchange (ETDEWEB)

Zotti, G.; Schiavon, G. (Ist. di Polarografia ed Elettrochimica Preparativa, Padova (Italy))

In situ conductivity of polypyrrole (as tosylate) as a function of oxidative doping level attains a maximum at three-quarters the total oxidation charge and the relevant in situ ESR signal corresponds to an equal concentration of spin-carrying (polaron) and spinless (bipolaron) species. Results are explained on the basis of mixed-valence conduction. Bipolaron conduction, taking the place of polaron-bipolaron conductivity at higher oxidation levels, accounts for persisting conductivity in the high-oxidation state.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Directory of Open Access Journals (Sweden)

M. Morales-Masis

2014-09-01

Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

Science.gov (United States)

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-07-01

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

Treatment of real effluents from the pharmaceutical industry: A comparison between Fenton oxidation and conductive-diamond electro-oxidation.

Science.gov (United States)

Pérez, J F; Llanos, J; Sáez, C; López, C; Cañizares, P; Rodrigo, M A

2017-06-15

Wastewater produced in pharmaceutical manufacturing plants (PMPs), especially the one coming from organic-synthesis facilities, is characterized by its large variability due to the wide range of solvents and chemical reagents used in the different stages of the production of medicines. Normally, the toxicity of the organic compounds prevent the utilization of biological processes and more powerful treatments are needed becoming advanced oxidation processes (AOPs) a valid alternative. In this work, the efficiency in abatement of pollution by Fenton oxidation (FO) and conductive-diamond electro-oxidation (CDEO) are compared in the treatment of 60 real effluents coming from different processes carried out in a pharmaceutical facility, using standardized tests. In 80% of the samples, CDEO was found to be more efficient than FO and in the remaining 20%, coagulation was found to exhibit a great significance in the COD abatement mechanism during FO, pointing out the effectiveness of the oxidation promoted by the electrochemical technology. Mean oxidation state of carbon was found to be a relevant parameter to understand the behavior of the oxidation technologies. It varied inversely proportional to efficiency in FO and it showed practically no influence in the case of CDEO. Copyright © 2016 Elsevier Ltd. All rights reserved.

Mixed conductivity studies in silver oxide based barium vanado-tellurite glasses

International Nuclear Information System (INIS)

Pant, Meenakshi; Kanchan, D.K.; Sharma, Poonam; Jayswal, Manish S.

2008-01-01

The dc conductivity and frequency dependent ac conductivity of the quaternary glass system x(BaO:1.5 Ag 2 O)-(95 - x)V 2 O 5 -5TeO 2 , are reported in the frequency range 1 Hz to 32 MHz in the temperature range from room temperature to 433 K. The dc conductivity measured in high temperature range increased with transition metal oxide content while the activation range decreased. The conductivity arises mainly from polaron hopping between V 4+ and V 5+ ions. High temperature conductivity data satisfy Mott's small polaron hopping model. It is found that a mechanism of non-adiabatic hopping is the most appropriate conduction model for these glasses. A power law behavior σ(ω) = σ dc + Aω n (with 0 < n < 1) is well exhibited by the ac conductivity data of the glasses. The activation energy calculated from both the relaxation time and dc conductivity is found to be nearly same in both the cases. A scaling of the conductivity spectra with respect to temperature and composition is attempted and it is observed that the relaxation dynamics of charge carriers in the present glasses is independent of temperature and composition

High power pulsed magnetron sputtering of transparent conducting oxides

International Nuclear Information System (INIS)

Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

2008-01-01

High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

Formation of high oxide ion conductive phases in the sintered oxides of the system Bi2O3-Ln2O3 (Ln = La-Yb)

International Nuclear Information System (INIS)

Iwahara, H.; Esaka, T.; Sato, T.; Takahashi, T.

1981-01-01

The electrical conduction in various phases of the system Bi 2 O 3 -Ln 2 O 3 (Ln = La, Nd, Sm, Dy, Er, or Yb) was investigated by measuring ac conductivity and the emf of the oxygen gas concentration cell. High-oxide-ion conduction was observed in the rhombohedral and face-centered cubic (fcc) phase in these systems. The fcc phase could be stabilized over a wide range of temperature by adding a certain amount of Ln 2 O 3 . In these cases, the larger the atomic number of Ln, the lower the content of Ln 2 O 3 required to form the fcc solid solution, except in the case of Yb 2 O 3 . The oxide ion conductivity of this phase decreased with increasing content of Ln 2 O 3 . Maximum conductivity was obtained at the lower limit of the fcc solid solution formation range in each system, which was more than one order of magnitude higher than those of conventional stabilized zirconias. Lattice parameters of the fcc phase were calculated from the x-ray diffraction patterns. The relationship between the oxide ion conductivity and the lattice parameter was also discussed

Influence of oxidative stress on the development of collateral circulation in total coronary occlusions.

Science.gov (United States)

Demirbag, Recep; Gur, Mustafa; Yilmaz, Remzi; Kunt, Alper Sami; Erel, Ozcan; Andac, M Halit

2007-03-02

The purpose of this study was to investigate whether the levels of total antioxidant capacity (TAC), total peroxide and oxidative stress index (OSI) are associated with the development of collaterals in total coronary occlusions. Our study group contained 176 consecutive men patients with single-vessel TCO, 94 of whom had poorly developed coronary collateral, while 82 had well-developed coronary collateral. TAC and total peroxide concentration were measured of plasma. The ratio of TAC to total peroxide was accepted as an indicator of oxidative stress. The values of total peroxide and OSI in the Group I were significantly lower than that in Group II (ptotal peroxide and OSI levels (ptotal peroxide and OSI were independent predictors of collaterals score (p=0.006 and ptotal coronary occlusion patients.

Lithium ion conductivity of molecularly compatibilized chitosan-poly(aminopropyltriethoxysilane)-poly(ethylene oxide) nanocomposites

International Nuclear Information System (INIS)

Fuentes, S.; Retuert, P.J.; Gonzalez, G.

2007-01-01

Films of composites of chitosan/poly(aminopropyltriethoxysilane)/poly(ethylene oxide) (CHI/pAPS/PEO) containing a fixed amount of lithium salt are studied. The ternary composition diagram of the composites, reporting information on the mechanic stability, the transparence and the electrical conductivity of the films, shows there is a window in which the molecular compatibility of the components is optimal. In this window, defined by the components ratios CHI/PEO 3:2, pAPS/PEO 2:3 and CHI/PEO 1:2, there is a particular composition Li x (CHI) 1 (PEO) 2 (pAPS) 1.2 for which the conductivity reaches a value of 1.7 x 10 -5 S cm -1 at near room temperature. Considering the balance between the Lewis acid and basic sites available in the component and the observed stoichiometry limits of formed polymer complexes, the conductivity values of these products may be understood by the formation of a layered structure in which the lithium ions, stabilized by the donors, poly(ethylene oxide) and/or poly(aminopropyltriethoxysilane), are intercalated in a chitosan matrix

Surface conductivity of the single crystal aluminum oxide in vacuum and caesium vapors

International Nuclear Information System (INIS)

Vasilchenko, A.V.; Izhvanov, O.L.

1996-01-01

Results of measurements of surface conductivity of single-crystal aluminum oxide samples in vacuum and cesium vapors at T=620 endash 830 K and P Cs =0.13 endash 2 Pa are shown in the paper. Analysis of caesium vapor influence is carried out and ultimate characteristics of samples conductivity under operation conditions in thermionic nuclear power system (NPP) TFE are estimated. copyright 1996 American Institute of Physics

Exfoliation approach for preparing high conductive reduced graphite oxide and its application in natural rubber composites

Energy Technology Data Exchange (ETDEWEB)

Wipatkrut, Pattharaporn [Department of Chemical Technology, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Poompradub, Sirilux, E-mail: sirilux.p@chula.ac.th [Department of Chemical Technology, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Center for Petroleum, Petrochemical and Advanced Material, Chulalongkorn University, Bangkok 10330 (Thailand)

2017-04-15

Highlights: • Graphite waste was exfoliated by oxidation and chemical and thermal reduction. • The obtained graphene-T was a single layer sheet with a high electrical conductivity. • Graphene-T incorporation at 5 phr improved the electrical conductivity of NR. • Graphene-T incorporation at 5–25 phr improved the mechanical properties of NR. - Abstract: High conductivity reduced graphite oxide (RGO) was prepared by exfoliation of graphite waste from the metal smelting industry. To improve the surface properties of the RGO, the graphite oxide obtained based on Hummers’ method was reduced by L-ascorbic acid to give RGOV, which was then subjected to thermal reduction to obtain RGOT. The residual oxygen-containing groups in RGOV were almost completely removed by the thermal reduction and the conjugated graphene networks were restored in RGOT. The effect of the RGOT content in natural rubber (NR) on the cure, electrical and mechanical properties of the NR-RGOT (NG) composites was evaluated. The electrical conductivity of NR was increased by the inclusion of RGOT at a percolation threshold of 5 phr, with an electrical conductivity of 8.71 × 10{sup −6} S/m. The mechanical properties, i.e., the modulus, tensile strength and hardness, of NG were comparable with those of conductive carbon black filled NR ones.

Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

International Nuclear Information System (INIS)

Schoemaker, S.; Willert-Porada, M.

2009-01-01

Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

Development of low temperature RF magnetron sputtered ITO films on flexible substrate

Energy Technology Data Exchange (ETDEWEB)

Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2010-09-15

Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: bjia_li@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2014-01-30

Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO{sub 2})/FTO bilayer films. Large and densely arranged grains were observed on all TiO{sub 2}/FTO bilayer films. The presence of TiO{sub 2} tetragonal rutile phase in the TiO{sub 2}/FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO{sub 2}/FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10{sup −2} Ω{sup −1}, higher than 1.78 × 10{sup −2} Ω{sup −1} for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO{sub 2}/FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10{sup −2} Ω{sup −1}, indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

Science.gov (United States)

Christen, David K.; He, Qing

2001-01-01

The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

Preparation of glucoheptonate - sup(99m) Tc using stannous ascorbate as reducing agent for TcO-4 ion

International Nuclear Information System (INIS)

Barboza, M.R.F.F. de; Silva, C.P.G. da.

1983-12-01

A preparation procedure of stannous ascorbate in lyophilized form is presented. This reducing agent was employed for the preparation of kits of calcium glucoheptonate (GHA) to be labelled with sup(99m) Tc for use in kidney scintigraphy. Comparative studies between kits prepared with stannous ascorbate and those prepared with stannous chloride as reducing agent were made. The labelling yield during 18 hours after the addition of sup(99m) TcO - 4 was higher when stannous ascorbate was used. The stability of kits of calcium glucoheptonate - sup(99m) Tc containing stannous ascorbate was studied during five months after its preparation in the lyophilized form. On the fifth month the labelling yield of GHA - sup(99m) Tc was 89-95%, being therefore suitable for kidney scintigraphy. (Author) [pt

Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

Science.gov (United States)

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-08-14

The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

Uranium dioxide and beryllium oxide enhanced thermal conductivity nuclear fuel development

International Nuclear Information System (INIS)

Andrade, Antonio Santos; Ferreira, Ricardo Alberto Neto

2007-01-01

The uranium dioxide is the most used substance as nuclear reactor fuel for presenting many advantages such as: high stability even when it is in contact with water in high temperatures, high fusion point, and high capacity to retain fission products. The conventional fuel is made with ceramic sintered pellets of uranium dioxide stacked inside fuel rods, and presents disadvantages because its low thermal conductivity causes large and dangerous temperature gradients. Besides, the thermal conductivity decreases further as the fuel burns, what limits a pellet operational lifetime. This research developed a new kind of fuel pellets fabricated with uranium dioxide kernels and beryllium oxide filling the empty spaces between them. This fuel has a great advantage because of its higher thermal conductivity in relation to the conventional fuel. Pellets of this kind were produced, and had their thermophysical properties measured by the flash laser method, to compare with the thermal conductivity of the conventional uranium dioxide nuclear fuel. (author) (author)

High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

International Nuclear Information System (INIS)

Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

2017-01-01

Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang, E-mail: genghz@tjpu.edu.cn; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

2017-01-15

Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

Total cost of ownership in the services sector: A case study

NARCIS (Netherlands)

K. Hurkens (Krisje); W. van der Valk (Wendy); J.Y.F. Wynstra (Finn)

2006-01-01

textabstractFew detailed studies exist of the trade-offs to be made when developing a comprehensive, strategically focused total cost of ownership (TCO) model. Moreover, most studies of TCO have been conducted in manufacturing firms, with little or no TCO research directed toward service

Influence of the ``second gap'' on the optical absorption of transparent conducting oxides

Science.gov (United States)

Ha, Viet-Anh; Waroquiers, David; Rignanese, Gian-Marco; Hautier, Geoffroy

Transparent conducting oxides (TCOs) are critical to many technologies (e.g., thin-film solar cells, flat-panel displays or organic light-emitting diodes). TCOs are heavily doped (n or p-type) oxides that satisfy many design criteria such as high transparency to visible light (i.e., a band gap > 3 eV), high concentration and mobility of carriers (leading to high conductivity), ... In such (highly doped) systems, optical transitions from the conduction band minimum to higher energy bands in n-type or from lower energy bands to the valence band maximum in p-type are possible and can degrade transparency. In fact, it has been claimed that a high energy (> 3eV) for any of these transitions made possible by doping, commonly referred as a high ``second gap'', is a necessary design criterion for high performance TCOs. Here, we study the influence of this second gap on the transparency of doped TCOs by using ab initio calculations within the random phase approximation (RPA) for several well-known p-type and n-type TCOs. Our work highlights how the second gap affects the transparency of doped TCOs, shining light on more accurate design criteria for high performance TCOs.

Structure, temperature and frequency dependent electrical conductivity of oxidized and reduced electrochemically exfoliated graphite

Science.gov (United States)

Radoń, Adrian; Włodarczyk, Patryk; Łukowiec, Dariusz

2018-05-01

The article presents the influence of reduction by hydrogen in statu nascendi and modification by hydrogen peroxide on the structure and electrical conductivity of electrochemically exfoliated graphite. It was confirmed that the electrochemical exfoliation can be used to produce oxidized nanographite with an average number of 25 graphene layers. The modified electrochemical exfoliated graphite and reduced electrochemical exfoliated graphite were characterized by high thermal stability, what was associated with removing of labile oxygen-containing groups. The presence of oxygen-containing groups was confirmed using Fourier-transform infrared spectroscopy. Influence of chemical modification by hydrogen and hydrogen peroxide on the electrical conductivity was determined in wide frequency (0.1 Hz-10 kHz) and temperature range (-50 °C-100 °C). Material modified by hydrogen peroxide (0.29 mS/cm at 0 °C) had the lowest electrical conductivity. This can be associated with oxidation of unstable functional groups and was also confirmed by analysis of Raman spectra. The removal of oxygen-containing functional groups by hydrogen in statu nascendi resulted in a 1000-fold increase in the electrical conductivity compared to the electrochemical exfoliated graphite.

Plasmachemical synthesis and evaluation of the thermal conductivity of metal-oxide compounds "Molybdenum-uranium dioxide"

Science.gov (United States)

Kotelnikova, Alexandra A.; Karengin, Alexander G.; Mendoza, Orlando

2018-03-01

The article represents possibility to apply oxidative and reducing plasma for plasma-chemical synthesis of metal-oxide compounds «Mo‒UO2» from water-salt mixtures «molybdic acid‒uranyl nitrate» and «molybdic acid‒ uranyl acetate». The composition of water-salt mixture was calculated and the conditions ensuring plasma-chemical synthesis of «Mo‒UO2» compounds were determined. Calculations were carried out at atmospheric pressure over a wide range of temperatures (300-4000 K), with the use of various plasma coolants (air, hydrogen). The heat conductivity coefficients of metal-oxide compounds «Mo‒UO2» consisting of continuous component (molybdenum matrix) are calculated. Inclusions from ceramics in the form of uranium dioxide were ordered in the matrix. Particular attention is paid to methods for calculating the coefficients of thermal conductivity of these compounds with the use of different models. Calculated results were compared with the experimental data.

On the interaction of granite with Tc(IV) and Tc(VII) in aqueous solution

International Nuclear Information System (INIS)

Eriksen, T.E.; Cui, Daquing

1991-10-01

The behaviour of technetium in granite-groundwater systems under reducing conditions was investigated. The anion TcO 4 - was reduced to Tc(IV) and simultaneously precipitated as TcO 2 xnH 2 O on the granite surfaces. The electron sources are assumed to be iron oxides and/or iron containing minerals in the granite. The technetium concentration in ground water under repository conditions may be predicted assuming TcO 2 xnH 2 O as the solid phase and TcO(OH) 2 0 and TcO 4 - as the predominant aqueous complexes using a formation constant for TcO(OH) 2 0 of log K = -8.16 and a standard reduction potential E 0 for the reaction TcO 4 - + 3e - + 4H + = TcO 2 xnH 2 O of 0.738 V. The surface related distribution ratio K a for TcO(OH) 2 0 between Stripa granite and ground water is approximately 1 cm based on geometrical surface area. (au)

Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Keerthi, K.; Nair, B. G.; Philip, R. R., E-mail: reenatara@rediffmail.com [Thin film research lab, Union Christian College, Aluva, Cochin, Kerala (India); Masuzawa, T.; Saito, I.; Okano, K. [Department Of Material Science, International Christian University (Japan); Johns, N. [Indian Institute of Technology, Bombay (India)

2016-05-23

Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

Preparation of transparent conducting zinc oxide films by rf reactive sputtering

International Nuclear Information System (INIS)

Vasanelli, L.; Valentini, A.; Losacco, A.

1986-01-01

Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2004-01-01

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

Facile Quantification and Identification Techniques for Reducing Gases over a Wide Concentration Range Using a MOS Sensor in Temperature-Cycled Operation

OpenAIRE

Caroline Schultealbert; Tobias Baur; Andreas Schütze; Tilman Sauerwald

2018-01-01

Dedicated methods for quantification and identification of reducing gases based on model-based temperature-cycled operation (TCO) using a single commercial MOS gas sensor are presented. During high temperature phases the sensor surface is highly oxidized, yielding a significant sensitivity increase after switching to lower temperatures (differential surface reduction, DSR). For low concentrations, the slope of the logarithmic conductance during this low-temperature phase is evaluated and can ...

Dense ceramic membranes based on ion conducting oxides

International Nuclear Information System (INIS)

Fontaine, M.L.; Larring, Y.; Bredesen, R.; Norby, T.; Grande, T.

2007-01-01

This chapter reviews the recent progress made in the fields of high temperature oxygen and hydrogen separation membranes. Studies of membranes for oxygen separation are mainly focusing on materials design to improve flux, and to lesser extent, related to stability issues. High oxygen fluxes satisfying industrial requirements can be obtained but, for many materials, the surface exchange rate is limiting the performance. The current status on electrolyte-type and mixed proton and electron conducting membranes is outlined, highlighting materials with improved stability in typical applications as solid oxide fuel cell technology and gas separation. In our presentation more fundamental aspects related to transport properties, chemical and mechanical stability of membrane materials are also treated. It is concluded that a significantly better understanding of the long term effects of operation in chemical gradients is needed for these types of membrane materials. (authors)

Sulfonation degree effect on ion-conducting SPEEK-titanium oxide membranes properties

Energy Technology Data Exchange (ETDEWEB)

Marrero, Jacqueline Costa; Gomes, Ailton de Souza; Dutra Filho, José Carlos, E-mail: jacquecosta@gmail.com [Universidade Federal do Rio de Janeiro (IMA/UFRJ), RJ (Brazil). Instituto de Macromoléculas Professora Eloisa Mano; Hui, Wang Shu [Universidade de São Paulo (USP), São Paulo, SP (Brazil). Departamento de Engenharia Metalúrgica e de Materiais; Oliveira, Vivianna Silva de [Escola Técnica Rezende Rammel (ETRR), Rio de Janeiro, RJ (Brazil)

2017-07-01

Polymeric membranes were developed using a SPEEK (sulfonated poly(ether ether ketone)) polymer matrix, containing titanium oxide (TiO{sub 2}) (incorporated by sol-gel method). SPEEK with different sulfonation degrees (SD): 63% and 50% were used. The influence of sulfonation degree on membrane properties was investigated. The thermal analysis (TGA and DTGA) and X-ray diffraction (XRD) were carried out to characterize the membranes and electrochemical impedance spectroscopy (EIS) was carried out to evaluate the proton conductivity of the membranes. The proton conductivities in water were of 3.25 to 37.08 mS.cm{sup -1}. Experimental data of impedance spectroscopy were analyzed with equivalent circuits using the Zview software, and the results showed that, the best fitted was at 80 °C. (author)

Investigation of ITO layers for application as transparent contacts in flexible photovoltaic cell structures

Science.gov (United States)

Znajdek, Katarzyna; Sibiński, Maciej

2013-07-01

In this paper authors present the mechanical, optical and electrical parameters of Indium Tin Oxide (ITO) Transparent Conductive Layers (TCL) deposited on flexible substrate. Layers' properties are analyzed and verified. Investigated Transparent Conductive Oxide (TCO) was deposited, using magnetron sputtering method. Flexible polymer PET (polyethylene terephthalate) foil was used as a substrate, in order to photovoltaic (PV) cell's emitter contact application of investigated material. ITO-coated PET foils have been dynamically bent on numerous cylinders of various diameters according to the standard requirements. Resistance changes for each measured sample were measured and recorded during bending cycle. Thermal durability, as well as temperature influence on resistance and optical transmission are verified. Presented results were conducted to verify practical suitability and to evaluate possible applications of Indium Tin Oxide as a front contact in flexible photovoltaic cell structures.

Graphene oxide-loaded shortening as an environmentally friendly heat transfer fluid with high thermal conductivity

Directory of Open Access Journals (Sweden)

Vongsetskul Thammasit

2017-01-01

Full Text Available Graphene oxide-loaded shortening (GOS, an environmentally friendly heat transfer fluid with high thermal conductivity, was successfully prepared by mixing graphene oxide (GO with a shortening. Scanning electron microscopy revealed that GO particles, prepared by the modified Hummer’s method, dispersed well in the shortening. In addition, the latent heat of GOS decreased while their viscosity and thermal conductivity increased with increasing the amount of loaded GO. The thermal conductivity of the GOS with 4% GO was higher than that of pure shortening of ca. three times, from 0.1751 to 0.6022 W/mK, and increased with increasing temperature. The GOS started to be degraded at ca. 360°C. After being heated and cooled at 100°C for 100 cycles, its viscosity slightly decreased and no chemical degradation was observed. Therefore, the prepared GOS is potentially used as environmentally friendly heat transfer fluid at high temperature.

Fabrication and characterization of conductive anodic aluminum oxide substrates

Science.gov (United States)

Altuntas, Sevde; Buyukserin, Fatih

2014-11-01

Biomaterials that allow the utilization of electrical, chemical and topographic cues for improved neuron-material interaction and neural regeneration hold great promise for nerve tissue engineering applications. The nature of anodic aluminum oxide (AAO) membranes intrinsically provides delicate control over topographic and chemical cues for enhanced cell interaction; however their use in nerve regeneration is still very limited. Herein, we report the fabrication and characterization of conductive AAO (CAAO) surfaces for the ultimate goal of integrating electrical cues for improved nerve tissue behavior on the nanoporous substrate material. Parafilm was used as a protecting polymer film, for the first time, in order to obtain large area (50 cm2) free-standing AAO membranes. Carbon (C) was then deposited on the AAO surface via sputtering. Morphological characterization of the CAAO surfaces revealed that the pores remain open after the deposition process. The presence of C on the material surface and inside the nanopores was confirmed by XPS and EDX studies. Furthermore, I-V curves of the surface were used to extract surface resistance values and conductive AFM demonstrated that current signals can only be achieved where conductive C layer is present. Finally, novel nanoporous C films with controllable pore diameters and one dimensional (1-D) C nanostructures were obtained by the dissolution of the template AAO substrate.

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

International Nuclear Information System (INIS)

Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

2003-01-01

Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

Transparent conductive oxides and alternative transparent electrodes for organic photovoltaics and OLEDs; Transparente leitfaehige Elektroden. Oxide und alternative Materialien fuer die organische Photovoltaik und OLEDs

Energy Technology Data Exchange (ETDEWEB)

Mueller-Meskamp, Lars; Sachse, Christoph; Kim, Yong Hyun; Furno, Mauro [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); May, Christian [Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany); Leo, Karl [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany)

2012-08-15

Organic, photoactive devices, such as OLEDs or organic solar cells, currently use indium tin oxide (ITO) as transparent electrode. Whereas ITO is industry-proven for many years and shows very good electrical and optical properties, its application for low-cost and flexible devices might not be optimal. For such applications innovative technologies such as network-based metal nanowire or carbon nanotube electrodes, graphene, conductive polymers, metal thin-films and alternative transparent conductive oxides emerge. Although some of these technologies are rather experimental and far from application, some of them have the potential to replace ITO in selected applications. (orig.)

Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

Energy Technology Data Exchange (ETDEWEB)

Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N. [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Schwenk, Johannes [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Nanoscale Materials Science, Überlandstrasse 129, 8600 Dübendorf (Switzerland)

2015-06-14

Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes

International Nuclear Information System (INIS)

Jäger, Timo; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N.; Schwenk, Johannes

2015-01-01

Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se 2 (CIGS) solar cells, leading to an open circuit voltage V OC enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V OC . Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V OC . Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V OC increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V OC of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability

Probing anodic oxidation kinetics and nanoscale heterogeneity within TiO2 films by Conductive Atomic Force Microscopy and combined techniques

International Nuclear Information System (INIS)

Diamanti, M.V.; Souier, T.; Stefancich, M.; Chiesa, M.; Pedeferri, M.P.

2014-01-01

Graphical abstract: - Highlights: • Nanoscale anodic titanium oxides were investigated with multidisciplinary approach. • Oxide thickness was estimated via spectrophotometry and coulometry. • C-AFM identified nanometric conductivity heterogeneities, ascribed to oxide structure. • High conductivity areas exhibited local memristive behavior. - Abstract: Anodic oxidation of titanium in acid electrolytes allows to obtain a thin, compact oxide layer with thickness, structure, color, and electrical properties that vary with process parameters imposed, among which cell voltage has a key effect. Although oxidation kinetics have been investigated in several research works, a broader vision of oxide properties–including thickness and structure–still has to be achieved, especially in the case of very thin oxide films, few tens of nanometers thick. This is vital for engineered applications of nanostructured TiO 2 films, as in the field of memristive devices, where a precise control of oxide thickness, composition and structure is required to tune its electrical response. In this work, oxide films were produced on titanium with thickness ranging from few nanometers to 200 nm. Oxide thickness was estimated by coulometry and spectrophotometry. These techniques were then combined with C-AFM, which provided a deeper understanding of oxide thickness and uniformity of the metal surface and probed the presence of crystalline nano-domains within the amorphous oxide phase affecting the overall film electrical and optical properties

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Effects of silicon:carbon P+ layer interfaces on solar cells

International Nuclear Information System (INIS)

Jeffrey, F.R.; Vernstrom, G.D.; Weber, M.F.; Gilbert, J.R.

1987-01-01

Results are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from 0.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch

Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

International Nuclear Information System (INIS)

Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

2015-01-01

Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

Solubility of Tc(IV) oxides

International Nuclear Information System (INIS)

Liu, D.J.; Fan, X.H.

2005-01-01

Full text of publication follows: The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 .nH 2 O. The solubility of Tc(IV) is used as a source term in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2+ . The solubility of Tc(IV) oxide has been determined in simulated groundwater and re-distilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and re-distilled water is about (1.49∼1.86) x 10 -9 mol/(L.d) under aerobic conditions, but Tc(IV) in simulated groundwater and re-distilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and re-distilled water is equal on the whole after centrifugation or ultrafiltration. The solubility of Tc(IV) oxide decreases with the increase of pH at pH 10 and is pH independent in the range 2 -8 to 10 -9 mol/L at 2 3 2- concentration. These data could be used to estimate the Tc(IV) solubility for cases where solubility limits transport of technetium in reducing environments of high-level waste repositories. (authors)

Does the conductivity of interconnect coatings matter for solid oxide fuel cell applications?

Science.gov (United States)

Goebel, Claudia; Fefekos, Alexander G.; Svensson, Jan-Erik; Froitzheim, Jan

2018-04-01

The present work aims to quantify the influence of typical interconnect coatings used for solid oxide fuel cells (SOFC) on area specific resistance (ASR). To quantify the effect of the coating, the dependency of coating thickness on the ASR is examined on Crofer 22 APU at 600 °C. Three different Co coating thicknesses are investigated, 600 nm, 1500 nm, and 3000 nm. Except for the reference samples, the material is pre-oxidized prior to coating to mitigate the outward diffusion of iron and consequent formation of poorly conducting (Co,Fe)3O4 spinel. Exposures are carried out at 600 °C in stagnant laboratory air for 500 h and subsequent ASR measurements are performed. Additionally the microstructure is investigated with scanning electron microscopy (SEM). On all pre-oxidized samples, a homogenous dense Co3O4 top layer is observed beneath which a thin layer of Cr2O3 is present. As the ASR values range between 7 and 12 mΩcm2 for all pre-oxidized samples, even though different Co3O4 thicknesses are observed, the results strongly suggest that for most applicable cases the impact of the coating on ASR is negligible and the main contributor is Cr2O3.

Transparent Conducting Films with Multilayered Structures Formed by Carbon Nanotubes and Reduced Graphene Oxides

International Nuclear Information System (INIS)

Kang, Jie Hun; Jang, Hyun Chul; Choi, Jung Mi; Hyeon, Jae Young; Sok, Jung Hyun

2014-01-01

The replacement for indium tin oxide (ITO) in electronic displays should have comparable optical transmittance and electrical conductivity while being easy to source and manufacture. However, novel materials such as single walled carbon nanotubes (SWCNTs) and reduced graphene oxides (RGOs) are incapable of addressing these challenges. We demonstrate a simple method to fabricate good transparent conductive films (TCFs) by combining and leveraging the superior optical transparency of RGOs and the excellent electrical conductivity of SWCNTs. This method affords thin multilayers of SWCNTs and RGOs with excellent optical and electrical properties because these properties are correlated with spraying time and the amount of SWCNTs or RGOs. In general, transmittance is advantageous to RGO as conductance is to CNTs. With a view to finding good TCFs with reduced sheet resistance, but with little sacrifice of transmittance, it is natural to explore the combination of CNT and RGO. The sandwiched multilayer of SWCNTs and RGOs exhibited a low sheet resistance of 214.2 Ω/sq, which was comparable to that of SWCNTs, and a transmittance of 60% at a wavelength of 550 nm. To further reduce the sheet resistance and improve the transparency of the multilayer TCFs, Au doping was carried out. The doping, in combination with controlled spraying of the amount of SWCNTs and RGOs, led to multilayers with resistance/transmittance combinations of 141.3 Ω/sq and 70% and 371.5 Ω/sq and 83%. These properties meet the requisite criteria for an ITO replacement.

The special features of the crystal structure and properties of oxides with mixed conductivity based on lanthanum gallate

Science.gov (United States)

Politova, E. D.; Ivanov, S. A.; Kaleva, G. M.; Mosunov, A. V.; Rusakov, V. S.

2008-10-01

The paper presents a review of works on the synthesis, structural composition effects, phase transitions, and electrical conductivity properties of multicomponent solid solutions based on heterosubstituted lanthanum gallate (La,A)(Ga,M)O3 - y . High-temperature phase transitions and structural and charge ordering effects were studied. The presence of iron cations in different valence states was proved; the relative contents of these cations depended on the x parameter and nonstoichiometry parameter y of the base composition. For M = Fe, antiferromagnetic ordering was observed; its temperature interval was determined by the concentration of iron cations in the high-spin state. The total conductivity was found to increase as the concentration of transition metal cations grew because of an increase in the electronic conductivity component. The data on structural parameters and dc and ac conductivity substantiated the conclusion that the highest ionic conductivity and permeability to oxygen were characteristic of iron-containing oxides. The results obtained are evidence that crystal chemical factors play a determining role in the formation of the ion-conducting properties of anion-deficient perovskite-like oxides.

Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

Science.gov (United States)

Panahi, S. N.; Samadi, H.; Nemati, A.

2016-10-01

Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical

Laboratory Investigation of Complex Conductivity and Magnetic Susceptibility on Natural Iron Oxide Coated Sand

Science.gov (United States)

Wang, C.; Slater, L. D.; Day-Lewis, F. D.; Briggs, M. A.

2017-12-01

Redox reactions occurring at the oxic/anoxic interface where groundwater discharges to surface water commonly result in iron oxide deposition that coats sediment grains. With relatively large total surface area, these iron oxide coated sediments serve as a sink for sorption of dissolved contaminants, although this sink may be temporary if redox conditions fluctuate with varied flow conditions. Characterization of the distribution of iron oxides in streambed sediments could provide valuable understanding of biogeochemical reactions and the ability of a natural system to sorb contaminants. Towards developing a field methodology, we conducted laboratory spectral induced polarization (SIP) and magnetic susceptibility (MS) measurements on natural iron oxide coated sand (Fe-sand) with grain sizes ranging from 0.3 to 2.0 mm in order to assess the sensitivity of these measurements to iron oxides in sediments. The Fe-sand was also sorted by sieving into various grain sizes to study the impact of grain size on the polarization mechanisms. The unsorted Fe-sand saturated with 0.01 S/m NaCl solution exhibited a distinct phase response ( > 4 mrad) in the frequency range from 0.001 to 100 Hz whereas regular silica sand was characterized by a phase response less than 1 mrad under the same conditions. The presence of iron oxide substantially increased MS (3.08×10-3 SI) over that of regular sand ( Laboratory results demonstrated that SIP and MS may be well suited to mapping the distribution of iron oxides in streambed sediments associated with anoxic groundwater discharge.

Fabrication and excellent conductive performance of antimony-doped tin oxide-coated diatomite with porous structure

International Nuclear Information System (INIS)

Du Yucheng; Yan Jing; Meng Qi; Wang Jinshu; Dai Hongxing

2012-01-01

Graphical abstract: Antimony-doped tin oxide (ATO)-coated diatomite with porous structures are fabricated using the co-precipitation method. The porous ATO-coated diatomite material shows excellent conductive performance. Highlights: ► Sb-doped SnO 2 (ATO)-coated diatomite materials with porous structures are prepared. ► Sn/Sb ratio, ATO coating amount, pH value, and temperature influence resistivity. ► Porous ATO-coated diatomite materials show excellent conductive performance. ► The lowest resistivity of the porous ATO-coated diatomite sample is 10 Ω cm. - Abstract: Diatomite materials coated with antimony-doped tin oxide (ATO) were prepared by the co-precipitation method, and characterized by means of the techniques, such as X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, selected-area electron diffraction, X-ray fluorescence spectroscopy, and N 2 adsorption–desorption measurement. It was shown that the coated ATO possessed a tetragonal rutile crystal structure, and the ATO-coated diatomite materials had a multi-pore (micro- meso-, and macropores) architecture. The porous ATO-coated diatomite materials exhibited excellent electrical conductive behaviors. The best conductive performance (volume resistivity = 10 Ω cm) was achieved for the sample that was prepared under the conditions of Sn/Sb molar ratio = 5.2, Sn/Sb coating amount = 45 wt%, pH = 1.0, and reaction temperature = 50 °C. Such a conductive porous material is useful for the applications in physical and chemical fields.

Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

Science.gov (United States)

Torres Arango, Maria A.

Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

Optimization of mechanical performance of oxidative nano-particle electrode nitrile butadiene rubber conducting polymer actuator.

Science.gov (United States)

Kim, Baek-Chul; Park, S J; Cho, M S; Lee, Y; Nam, J D; Choi, H R; Koo, J C

2009-12-01

Present work delivers a systematical evaluation of actuation efficiency of a nano-particle electrode conducting polymer actuator fabricated based on Nitrile Butadiene Rubber (NBR). Attempts are made for maximizing mechanical functionality of the nano-particle electrode conducting polymer actuator that can be driven in the air. As the conducting polymer polypyrrole of the actuator is to be fabricated through a chemical oxidation polymerization process that may impose certain limitations on both electrical and mechanical functionality of the actuator, a coordinated study for optimization process of the actuator is necessary for maximizing its performance. In this article actuation behaviors of the nano-particle electrode polypyrrole conducting polymer is studied and an optimization process for the mechanical performance maximization is performed.

Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

Science.gov (United States)

Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

2016-05-01

Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

Low mercury concentration produces vasoconstriction, decreases nitric oxide bioavailability and increases oxidative stress in rat conductance artery.

Directory of Open Access Journals (Sweden)

Núbia Belem Lemos

Full Text Available Mercury is an environmental pollutant that reduces nitric oxide (NO bioavailability and increases oxidative stress, having a close link with cardiovascular diseases, as carotid atherosclerosis, myocardial infarction, coronary heart disease and hypertension. One of the main sites affected by oxidative stress, which develops atherosclerosis, is the aorta. Under acute exposure to low mercury concentrations reactive oxygen species (ROS production were only reported for resistance vessels but if low concentrations of mercury also affect conductance arteries it is still unclear. We investigated the acute effects of 6 nM HgCl(2 on endothelial function of aortic rings measuring the reactivity to phenylephrine in rings incubated, or not, with HgCl(2 for 45 min, the protein expression for cyclooxygenase 2 (COX-2 and the AT1 receptor. HgCl(2 increased Rmax and pD2 to phenylephrine without changing the vasorelaxation induced by acetylcholine and sodium nitroprusside. Endothelial damage abolished the increased reactivity to phenylephrine. The increase of Rmax and pD2 produced by L-NAME was smaller in the presence of HgCl(2. Enalapril, losartan, indomethacin, furegrelate, the selective COX-2 inhibitor NS 398, superoxide dismutase and the NADPH oxidase inhibitor apocynin reverted HgCl(2 effects on the reactivity to phenylephrine, COX-2 protein expression was increased, and AT1 expression reduced. At low concentration, below the reference values, HgCl(2 increased vasoconstrictor activity by reducing NO bioavailability due to increased ROS production by NADPH oxidase activity. Results suggest that this is due to local release of angiotensin II and prostanoid vasoconstrictors. Results also suggest that acute low concentration mercury exposure, occurring time to time could induce vascular injury due to endothelial oxidative stress and contributing to increase peripheral resistance, being a high risk factor for public health.

Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

Science.gov (United States)

Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

2009-12-16

It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder

International Nuclear Information System (INIS)

Pennycook, Timothy J.; Pantelides, Sokrates T.; Beck, Matthew J.; Varga, Kalman; Varela, Maria; Pennycook, Stephen J.

2010-01-01

Oxide ionic conductors typically operate at high temperatures, which limits their usefulness. Colossal room-temperature ionic conductivity was recently discovered in multilayers of yttria-stabilized zirconia (YSZ) and SrTiO 3 . Here we report density-functional calculations that trace the origin of the effect to a combination of lattice-mismatch strain and O-sublattice incompatibility. Strain alone in bulk YSZ enhances O mobility at high temperatures by inducing extreme O disorder. In multilayer structures, O-sublattice incompatibility causes the same extreme disorder at room temperature.

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

International Nuclear Information System (INIS)

Singh, Hemant Kr.; Avasthi, D.K.; Aggarwal, Shruti

2015-01-01

Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO 2 :F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In 2 O 3 :Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag +9 ions at fluences ranging from 3.0 × 10 11 ions/cm 2 to 3.0 × 10 13 ions/cm 2 . The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications

Nanostructuring the electronic conducting La0.8Sr0.2MnO3-δ cathode for high-performance in proton-conducting solid oxide fuel cells below 600°C

KAUST Repository

Da’ as, Eman Husni; Bi, Lei; Boulfrad, Samir; Traversa, Enrico

2017-01-01

Proton-conducting oxides offer a promising electrolyte solution for intermediate temperature solid oxide fuel cells (SOFCs) due to their high conductivity and low activation energy. However, the lower operation temperature leads to a reduced cathode activity and thus a poorer fuel cell performance. La0.8Sr0.2MnO3-δ (LSM) is the classical cathode material for high-temperature SOFCs, which lack features as a proper SOFC cathode material at intermediate temperatures. Despite this, we here successfully couple nanostructured LSM cathode with proton-conducting electrolytes to operate below 600°C with desirable SOFC performance. Inkjet printing allows depositing nanostructured particles of LSM on Y-doped BaZrO3(BZY) backbones as cathodes for proton-conducting SOFCs, which provides one of the highest power output for the BZY-based fuel cells below 600°C. This somehow changes the common knowledge that LSM can be applied as a SOFC cathode materials only at high temperatures (above 700°C).

Nanostructuring the electronic conducting La0.8Sr0.2MnO3-δ cathode for high-performance in proton-conducting solid oxide fuel cells below 600°C

KAUST Repository

Da’as, Eman Husni

2017-10-28

Proton-conducting oxides offer a promising electrolyte solution for intermediate temperature solid oxide fuel cells (SOFCs) due to their high conductivity and low activation energy. However, the lower operation temperature leads to a reduced cathode activity and thus a poorer fuel cell performance. La0.8Sr0.2MnO3-δ (LSM) is the classical cathode material for high-temperature SOFCs, which lack features as a proper SOFC cathode material at intermediate temperatures. Despite this, we here successfully couple nanostructured LSM cathode with proton-conducting electrolytes to operate below 600°C with desirable SOFC performance. Inkjet printing allows depositing nanostructured particles of LSM on Y-doped BaZrO3(BZY) backbones as cathodes for proton-conducting SOFCs, which provides one of the highest power output for the BZY-based fuel cells below 600°C. This somehow changes the common knowledge that LSM can be applied as a SOFC cathode materials only at high temperatures (above 700°C).

The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium

International Nuclear Information System (INIS)

Souza, Kellie Provazi de

2006-01-01

The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO 4 ) 2 (NH 4 ) 2 .6H 2 O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl 3 composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

An experimental study of perovskite-structured mixed ionic- electronic conducting oxides and membranes

Science.gov (United States)

Zeng, Pingying

In recent decades, ceramic membranes based on mixed ionic and electronic conducting (MIEC) perovskite-structured oxides have received many attentions for their applications for air separation, or as a membrane reactor for methane oxidation. While numerous perovskite oxide materials have been explored over the past two decades; there are hardly any materials with sufficient practical economic value and performance for large scale applications, which justifies continuing the search for new materials. The main purposes of this thesis study are: (1) develop several novel SrCoO3-delta based MIEC oxides, SrCoCo1-xMxO3-delta, based on which membranes exhibit excellent oxygen permeability; (2) investigate the significant effects of the species and concentration of the dopants M (metal ions with fixed valences) on the various properties of these membranes; (3) investigate the significant effects of sintering temperature on the microstructures and performance of oxygen permeation membranes; and (4) study the performance of oxygen permeation membranes as a membrane reactor for methane combustion. To stabilize the cubic phase structure of the SrCoO3-delta oxide, various amounts of scandium was doped into the B-site of SrCoO 3-delta to form a series of new perovskite oxides, SrScxCoCo 1-xO3-delta (SSCx, x = 0-0.7). The significant effects of scandium-doping concentration on the phase structure, electrical conductivity, sintering performance, thermal and structural stability, cathode performance, and oxygen permeation performance of the SSCx membranes, were systematically studied. Also for a more in-depth understanding, the rate determination steps for the oxygen transport process through the membranes were clarified by theoretical and experimental investigation. It was found that only a minor amount of scandium (5 mol%) doping into the B-site of SrCoO3-delta can effectively stabilize the cubic phase structure, and thus significantly improve the electrical conductivity and

Building up Graphene-Based Conductive Polymer Composite Thin Films Using Reduced Graphene Oxide Prepared by γ-Ray Irradiation

Directory of Open Access Journals (Sweden)

Siyuan Xie

2013-01-01

Full Text Available In this paper, reduced graphene oxide (RGO was prepared by means of γ-ray irradiation of graphene oxide (GO in a water/ethanol mix solution, and we investigated the influence of reaction parameters, including ethanol concentration, absorbed dose, and dose rate during the irradiation. Due to the good dispersibility of the RGO in the mix solution, we built up flexible and conductive composite films based on the RGO and polymeric matrix through facile vacuum filtration and polymer coating. The electrical and optical properties of the obtained composite films were tested, showing good electrical conductivity with visible transmittance but strong ultraviolet absorbance.

Fabrication and excellent conductive performance of antimony-doped tin oxide-coated diatomite with porous structure

Energy Technology Data Exchange (ETDEWEB)

Du Yucheng, E-mail: ychengdu@bjut.edu.cn [Key Lab of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Yan Jing; Meng Qi; Wang Jinshu [Key Lab of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Dai Hongxing, E-mail: hxdai@bjut.edu.cn [Laboratory of Catalysis Chemistry and Nanoscience, Department of Chemistry and Chemical Engineering, College of Environmental and Energy Engineering, Beijing University of Technology, Beijing 100124 (China)

2012-04-16

Graphical abstract: Antimony-doped tin oxide (ATO)-coated diatomite with porous structures are fabricated using the co-precipitation method. The porous ATO-coated diatomite material shows excellent conductive performance. Highlights: Black-Right-Pointing-Pointer Sb-doped SnO{sub 2} (ATO)-coated diatomite materials with porous structures are prepared. Black-Right-Pointing-Pointer Sn/Sb ratio, ATO coating amount, pH value, and temperature influence resistivity. Black-Right-Pointing-Pointer Porous ATO-coated diatomite materials show excellent conductive performance. Black-Right-Pointing-Pointer The lowest resistivity of the porous ATO-coated diatomite sample is 10 {Omega} cm. - Abstract: Diatomite materials coated with antimony-doped tin oxide (ATO) were prepared by the co-precipitation method, and characterized by means of the techniques, such as X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, selected-area electron diffraction, X-ray fluorescence spectroscopy, and N{sub 2} adsorption-desorption measurement. It was shown that the coated ATO possessed a tetragonal rutile crystal structure, and the ATO-coated diatomite materials had a multi-pore (micro- meso-, and macropores) architecture. The porous ATO-coated diatomite materials exhibited excellent electrical conductive behaviors. The best conductive performance (volume resistivity = 10 {Omega} cm) was achieved for the sample that was prepared under the conditions of Sn/Sb molar ratio = 5.2, Sn/Sb coating amount = 45 wt%, pH = 1.0, and reaction temperature = 50 Degree-Sign C. Such a conductive porous material is useful for the applications in physical and chemical fields.

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials.

Science.gov (United States)

Winnicki, M; Baszczuk, A; Rutkowska-Gorczyca, M; Jasiorski, M; Małachowska, A; Posadowski, W; Znamirowski, Z; Ambroziak, A

2017-01-01

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In 2 O 3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In 2 O 3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions.

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng

2018-05-11

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials

Directory of Open Access Journals (Sweden)

M. Winnicki

2017-01-01

Full Text Available Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In2O3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In2O3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions.

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng; Wang, Zhenwei; Firdaus, Yuliar; Babics, Maxime; Alshareef, Husam N.; Beaujuge, Pierre

2018-01-01

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Improving the photovoltaic parameters in Quantum dot sensitized solar cells through employment of chemically deposited compact titania blocking layer

Energy Technology Data Exchange (ETDEWEB)

Rajendra Prasad, M.B., E-mail: rajendraprasadmb75@gmail.com [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); National Defence Academy, Khadakwasla, Pune, 411023 (India); Kadam, Vishal [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); Joo, Oh-Shim [Korea Institute of Science and Technology, PO Box No. 131, Chongryang, Seoul, 130-650 (Korea, Republic of); Pathan, Habib M. [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India)

2017-06-15

Incorporation of compact blocking layer at the Transparent Conducting Oxide (TCO)/Electrolyte interface is an effective method to improve the device performance in QDSSC through mitigation of electron recombinations at this interface. This paper reports the most facile and cost effective method of depositing a rutile titania Compact Layer (CL) over Fluorine doped Tin Oxide (FTO) substrate and its application in titania based CdS QD sensitized solar cells. The deposited compact layers are characterized to study their structural, optical, morphological and electrochemical properties using X-Ray Diffractometry, UV–Visible spectroscopy, Scanning electron microscopy, Cyclic Voltammetry and Contact Angle measurements. Sandwich solar cells are fabricated using these CL based electrodes and characterized using Electrochemical Impedance Spectroscopy, Open Circuit Voltage Decay and J-V characteristics. The CL incorporated CdS QDSSC showed more than 100% increase in the photoconversion efficiency (1.68%) as compared to its bare FTO counterpart (0.73%) proving the efficacy of employed strategy. - Highlights: • Deposited titania compact layer by a facile room temperature chemical bath method. • Employed this to mitigate back electron transfer at TCO/Electrolyte interface. • Compact layer incorporation has improved the solar cell performance by 130%.

TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

Directory of Open Access Journals (Sweden)

Silvia Maioco

2013-03-01

Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

International Nuclear Information System (INIS)

Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

2007-01-01

Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

KAUST Repository

Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

2012-01-01

A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

A study of tritium behavior in lithium oxide by ion conductivity measurements

International Nuclear Information System (INIS)

Noda, Kenji; Ishii, Yoshinobu; Ohno, Hideo; Watanabe, Hitoshi

1989-01-01

Ion conductivity of lithium oxide (Li 2 O) irradiated with oxygen ions was measured to obtain information about the effects of irradiation on the behavior of lithium ions and tritium. The conductivity around 490 K decreased with the ion fluence, while around 440 K it increased. The decrease around 490 K and the increase around 440 K were assumed to be attributed to the F + centers and the unspecified radiation defects, respectively. From the point of view that the rate determinant in the mechanism of diffusion of lithium ions in Li 2 O leading to the ion conductivity is the same as that of tritium, the diffusivity of tritium is assumed to be as follows: the diffusivity of tritium is decreased by the F + centers in the range from 490 K to the temperature at which almost all of F + centers are recovered, while it is increased around 440 K by the unspecified radiation defects. In addition, effects of the irradiation on valence states of tritium (i.e., T + , T - ) were discussed in terms of the radiation defects. (orig.)

Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

Science.gov (United States)

Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

2014-05-07

Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

Decoration of PbS nanoparticles on Al-doped ZnO nanorod array thin film with hydrogen treatment as a photoelectrode for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Hsu, Chih-Hsiung; Chen, Chao-Hong [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chen, Dong-Hwang, E-mail: chendh@mail.ncku.edu.tw [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2013-03-25

Highlights: ► AZO nanorod array thin film is used as a photoanode for solar water splitting. ► Hydrogen treatment and sensitization by PbS nanoparticles enhance photocurrent. ► A novel ITO/FTO-free composite photoelectrode is developed. ► The pre-fabrication and use of an extra TCO thin film substrate is unnecessary. -- Abstract: Al-doped ZnO (AZO) nanorod arrays thin film with hydrogen treatment is directly used as a photoelectrode for solar water splitting without an extra transparent conducting oxide (TCO) thin film because it possesses the functions of TCO thin film and photoactive 1-dimensional nanostructured semiconductor simultaneously. To enhance the absorption in the visible region, PbS nanoparticles decorated the AZO nanorods via successive ionic layer adsorption and reaction route. The PbS nanoparticles have a face-centered cubic structure and their decoration does not destroy the 1-dimensional morphology of AZO nanorod arrays. With increasing the cycle number of PbS nanoparticles decoration, the grain size and loading of PbS nanoparticles become larger gradually which leads to lower energy bandgap and stronger absorption. A maximum photocurrent density of 1.65 mW cm{sup −2} is obtained when the cycle number is 20, which is much higher than those without PbS nanoparticles sensitization or hydrogen treatment. This demonstrates that the AZO nanorod array thin film with hydrogen treatment can be directly used as a photoelectrode without an extra TCO thin film. Because the use of expensive metals can be avoided and the pre-fabrication of TCO thin film substrate is necessary no more, the fabrication of such a composite photoelectrode becomes simple and low-cost. So, it has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption.

Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode

International Nuclear Information System (INIS)

Ko, Yoon Duk; Lee, Chang Hun; Moon, Doo Kyung; Kim, Young Sung

2013-01-01

This paper discusses the effect of oxygen on the transparent conducting properties and mechanical durability of the amorphous indium zinc tin oxide (IZTO) films. IZTO films deposited on flexible clear polyimide (PI) substrate using pulsed direct current (DC) magnetron sputtering at room temperature under various oxygen partial pressures. All IZTO films deposited at room temperature exhibit an amorphous structure. The electrical and optical properties of the IZTO films were sensitively influenced by oxygen partial pressures. At optimized deposition condition of 3.0% oxygen partial pressure, the IZTO film shows the lowest resistivity of 6.4 × 10 −4 Ωcm, high transmittance of over 80% in the visible range, and figure of merit value of 3.6 × 10 −3 Ω −1 without any heat controls. In addition, high work function and good mechanical flexibility of amorphous IZTO films are beneficial to flexible applications. It is proven that the proper oxygen partial pressure is important parameter to enhance the transparent conducting properties of IZTO films on PI substrate deposited at room temperature. - Highlights: • Indium zinc tin oxide (IZTO) films were deposited on polyimide at room temperature. • Transparent conducting properties of IZTO were influenced with oxygen partial pressure. • The smooth surface and high work function of IZTO were beneficial to anode layer. • The mechanical reliability of IZTO shows better performance to indium tin oxide film

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Hemant Kr. [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India); Avasthi, D.K. [Inter University Accelerator Center, Post Box 10502, New Delhi (India); Aggarwal, Shruti, E-mail: shruti.al@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India)

2015-06-15

Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO{sub 2}:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In{sub 2}O{sub 3}:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag{sup +9} ions at fluences ranging from 3.0 × 10{sup 11} ions/cm{sup 2} to 3.0 × 10{sup 13} ions/cm{sup 2}. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

Science.gov (United States)

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Integration of conducting polymer network in non-conductive polymer substrates

DEFF Research Database (Denmark)

Hansen, Thomas Steen; West, Keld; Hassager, Ole

2006-01-01

Anew method for integration ofconjugated, inherently conducting polymers into non-conductive polymer substrates has been developed. Alayer of the conducting polymer is polymerised by chemical oxidation, e.g. using Fe(ID) p-toluene sulfonate (ferri tosylate) followed by washing with a solvent which...... simultaneously removes residual and spent oxidant and at the same time dissolves the top layer of the polymer substrate. This results in an integration of the conducting polymer into the surface layers of the polymer substrate. Several combinations of conducting polymers and substrates have been tested...... absorption during sequential reactive ion etching has allowed for analysis of the PEDOT distribution within the surface layer of thePMMA substrate. The surface resistance ofthe conducting polymer layer remains low while the surface layer at the same time adapts some of the mechanical properties...

An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

NARCIS (Netherlands)

Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

2016-01-01

Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

The effect of fiscal incentives on market penetration of electric vehicles: A pairwise comparison of total cost of ownership

International Nuclear Information System (INIS)

Lévay, Petra Zsuzsa; Drossinos, Yannis; Thiel, Christian

2017-01-01

An important barrier to electric vehicle (EV) sales is their high purchase price compared to internal combustion engine (ICE) vehicles. We conducted total cost of ownership (TCO) calculations to study how costs and sales of EVs relate to each other and to examine the role of fiscal incentives in reducing TCO and increasing EV sales. We composed EV-ICE vehicle pairs that allowed cross-segment and cross-country comparison in eight European countries. Actual car prices were used to calculate the incentives for each model in each country. We found a negative TCO-sales relationship that differs across car segments. Compared to their ICE vehicle pair, big EVs have lower TCO, higher sales, and seem to be less price responsive than small EVs. Three country groups can be distinguished according to the level of fiscal incentives and their impact on TCO and EV sales. In Norway, incentives led to the lowest TCO for the EVs. In the Netherlands, France, and UK the TCO of EVs is close to the TCO of the ICE pairs. In the other countries the TCO of EVs exceeds that of the ICE vehicles. We found that exemptions from flat taxes favour big EVs, while lump-sum subsidies favour small EVs. - Highlights: • Pairwise comparison of EV and ICE vehicle TCO and sales in eight European countries. • In NO, EV TCO is lower than ICE TCO; in NL, FR, and UK, EV TCO is slightly higher. • Compared to ICE vehicles, big EVs have lower TCO and higher sales than small EVs. • Exemptions from flat taxes favour big EVs, lump-sum subsidies favour small EVs. • Most popular EV models: Tesla Model S, Nissan Leaf, Mitsubishi Outlander PHEV.

An electrical method for the measurement of the thermal and electrical conductivity of reduced graphene oxide nanostructures.

Science.gov (United States)

Schwamb, Timo; Burg, Brian R; Schirmer, Niklas C; Poulikakos, Dimos

2009-10-07

This paper introduces an electrical four-point measurement method enabling thermal and electrical conductivity measurements of nanoscale materials. The method was applied to determine the thermal and electrical conductivity of reduced graphene oxide flakes. The dielectrophoretically deposited samples exhibited thermal conductivities in the range of 0.14-2.87 W m(-1) K(-1) and electrical conductivities in the range of 6.2 x 10(2)-6.2 x 10(3) Omega(-1) m(-1). The measured properties of each flake were found to be dependent on the duration of the thermal reduction and are in this sense controllable.

A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces.

Science.gov (United States)

Yu, Liping; Zunger, Alex

2014-10-13

The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles calculations of electronic and defect properties of LaAlO3/SrTiO3 interfaces and reveal a unifying mechanism for the origins of both conductivity and magnetism. We demonstrate that the polar discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. The ionization of the spontaneously formed surface oxygen vacancy defects leads to interface conductivity, whereas the unionized Ti-on-Al antisite defects lead to interface magnetism. The proposed mechanism suggests practical design principles for inducing and controlling both conductivity and magnetism at general polar-nonpolar interfaces.

Neutron scattering study of charge-ordering in R1/3Sr2/3FeO3 (R=La, Pr, Nd, Sm, and Y)

International Nuclear Information System (INIS)

Ma, Jie

2010-01-01

The complicated physical phenomena in complex transition-metal oxides (TMO), such as high Tc superconductivity, colossal magnetoresistivity, metal-insulator transitions, etc., have long been the focus of intense inquiry and debate in condensed matter science, since they are related to strong electronic correlations and cannot be explained within the 'standard model' of solid state physics. These novel functionalities of the correlated electron systems have a wide range of potential for applications in industry, such as information storage, energy transportation, and so on. The charge-ordering (CO) transition is very common in TMO and there is a specific CO transition temperature, TCO. Above TCO, the charge is not ordered, which means that the electrons in a compound are itinerant and the positions of the electrons are not fixed. Below TCO, the charge is ordered, which means that the electrons are localized and the positions of the electrons are settled. Hence, the electrical conductivity of a material is changed at TCO and this transition is classified as metal-insulator transition. Usually the CO with commensurate hole doping in TMO is thought to play an important role in various cases, including the superconducting cuprates, where the spin/charge stripe formation competes with superconducting states, colossal magnetoresistive manganites, where CO competes with ferromagnetic metallic state stabilized by an external magnetic field, layered nickelates, where CO takes the form of the small polaron lattices, and layered manganites, where CO could be bothered by the correlated dynamics of spins and charges. Therefore understanding the causes and implications of CO phenomena is significantly important.

Neutron scattering study of charge-ordering in R1/3Sr2/3FeO3 (R=La, Pr, Nd, Sm, and Y)

Energy Technology Data Exchange (ETDEWEB)

Ma, Jie [Iowa State Univ., Ames, IA (United States)

2010-01-01

The complicated physical phenomena in complex transition-metal oxides (TMO), such as high T_c superconductivity, colossal magnetoresistivity, metal-insulator transitions, etc., have long been the focus of intense inquiry and debate in condensed matter science, since they are related to strong electronic correlations and cannot be explained within the 'standard model' of solid state physics. These novel functionalities of the correlated electron systems have a wide range of potential for applications in industry, such as information storage, energy transportation, and so on. The charge-ordering (CO) transition is very common in TMO and there is a specific CO transition temperature, TCO. Above TCO, the charge is not ordered, which means that the electrons in a compound are itinerant and the positions of the electrons are not fixed. Below TCO, the charge is ordered, which means that the electrons are localized and the positions of the electrons are settled. Hence, the electrical conductivity of a material is changed at TCO and this transition is classified as metal-insulator transition. Usually the CO with commensurate hole doping in TMO is thought to play an important role in various cases, including the superconducting cuprates, where the spin/charge stripe formation competes with superconducting states, colossal magnetoresistive manganites, where CO competes with ferromagnetic metallic state stabilized by an external magnetic field, layered nickelates, where CO takes the form of the small polaron lattices, and layered manganites, where CO could be bothered by the correlated dynamics of spins and charges. Therefore understanding the causes and implications of CO phenomena is significantly important.

Exergoeconomic analysis of utilizing the transcritical CO_2 cycle and the ORC for a recompression supercritical CO_2 cycle waste heat recovery: A comparative study

International Nuclear Information System (INIS)

Wang, Xurong; Dai, Yiping

2016-01-01

Highlights: • An exergoeconomic analysis is performed for sCO_2/tCO_2 cycle. • Performance of the sCO_2/tCO_2 cycle and sCO_2/ORC cycle are presented and compared. • The sCO_2/tCO_2 cycle performs better than the sCO_2/ORC cycle at lower PRc. • The sCO_2/tCO_2 cycle has comparable total product unit cost with the sCO_2/ORC cycle. - Abstract: Two combined cogeneration cycles are examined in which the waste heat from a recompression supercritical CO_2 Brayton cycle (sCO_2) is recovered by either a transcritical CO_2 cycle (tCO_2) or an Organic Rankine Cycle (ORC) for generating electricity. An exergoeconomic analysis is performed for sCO_2/tCO_2 cycle performance and its comparison to the sCO_2/ORC cycle. The following organic fluids are considered as the working fluids in the ORC: R123, R245fa, toluene, isobutane, isopentane and cyclohexane. Thermodynamic and exergoeconomic models are developed for the cycles on the basis of mass and energy conservations, exergy balance and exergy cost equations. Parametric investigations are conducted to evaluate the influence of decision variables on the performance of sCO_2/tCO_2 and sCO_2/ORC cycles. The performance of these cycles is optimized and then compared. The results show that the sCO_2/tCO_2 cycle is preferable and performs better than the sCO_2/ORC cycle at lower PRc. When the sCO_2 cycle operates at a cycle maximum pressure of around 20 MPa (∼2.8 of PRc), the tCO_2 cycle is preferable to be integrated with the recompression sCO_2 cycle considering the off-design conditions. Moreover, contrary to the sCO_2/ORC system, a higher tCO_2 turbine inlet temperature improves exergoeconomic performance of the sCO_2/tCO_2 cycle. The thermodynamic optimization study reveals that the sCO_2/tCO_2 cycle has comparable second law efficiency with the sCO_2/ORC cycle. When the optimization is conducted based on the exergoeconomics, the total product unit cost of the sCO_2/ORC is slightly lower than that of the sCO_2/tCO_2

Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

Directory of Open Access Journals (Sweden)

Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

2011-01-01

Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

Ionic conductivity in new perovskite type oxides: NaAZrMO6 (A = Ca or Sr; M = Nb or Ta)

International Nuclear Information System (INIS)

Rajendran, Deepthi N.; Ravindran Nair, K.; Prabhakar Rao, P.; Sibi, K.S.; Koshy, Peter; Vaidyan, V.K.

2008-01-01

New oxides of the type, NaAZrMO 6 (M = Ca or Sr; M = Nb or Ta), have been prepared by the solid-state reaction technique. Phase identification by powder X-ray diffraction (XRD) shows that NaCaZrMO 6 has orthorhombic perovskite type structure (Pnma) and NaSrZrMO 6 has cubic perovskite type structure (Pm3m). The grain morphology observation by scanning electron microscope (SEM) shows well-sintered grains. ac impedance spectra and electrical conductivity measurements in air, oxygen and nitrogen atmospheres indicate that they are probable oxide ion conductors with ionic conductivities of the order of 10 -3 S cm -1 at 750 deg. C

Effect of Zirconium Oxide Nanofiller and Dibutyl Phthalate Plasticizer on Ionic Conductivity and Optical Properties of Solid Polymer Electrolyte

Science.gov (United States)

Yasin, Siti Mariah Mohd; Ibrahim, Suriani

2014-01-01

New solid polymer electrolytes (SPE) based on poly(ethylene oxide) (PEO) doped with lithium trifluoromethanesulfonate (LiCF3SO3), dibutyl phthalate (DBP) plasticizer, and zirconium oxide (ZrO2) nanoparticles were prepared by solution-casting technique. The conductivity was enhanced by addition of dibutyl phthalate (DBP) plasticizer and ZrO2 nanofiller with maximum conductivity (1.38 × 10−4 Scm−1). The absorption edge and band gap values showed decreases upon addition of LiSO3CF3, DBP, and ZrO2 due to the formation of localized states in the SPE and the degree of disorder in the films increased. PMID:25133244

Effect of Zirconium Oxide Nanofiller and Dibutyl Phthalate Plasticizer on Ionic Conductivity and Optical Properties of Solid Polymer Electrolyte

Directory of Open Access Journals (Sweden)

Siti Mariah Mohd Yasin

2014-01-01

Full Text Available New solid polymer electrolytes (SPE based on poly(ethylene oxide (PEO doped with lithium trifluoromethanesulfonate (LiCF3SO3, dibutyl phthalate (DBP plasticizer, and zirconium oxide (ZrO2 nanoparticles were prepared by solution-casting technique. The conductivity was enhanced by addition of dibutyl phthalate (DBP plasticizer and ZrO2 nanofiller with maximum conductivity (1.38×10-4 Scm-1. The absorption edge and band gap values showed decreases upon addition of LiSO3CF3, DBP, and ZrO2 due to the formation of localized states in the SPE and the degree of disorder in the films increased.

Local structure and oxide-ion conduction mechanism in apatite-type lanthanum silicates.

Science.gov (United States)

Masson, Olivier; Berghout, Abid; Béchade, Emilie; Jouin, Jenny; Thomas, Philippe; Asaka, Toru; Fukuda, Koichiro

2017-01-01

The local structure of apatite-type lanthanum silicates of general formula La 9.33+x (SiO 4 ) 6 O 2+3x/2 has been investigated by combining the atomic pair distribution function (PDF) method, conventional X-ray and neutron powder diffraction (NPD) data and density functional theory (DFT) calculations. DFT was used to build structure models with stable positions of excess oxide ions within the conduction channel. Two stable interstitial positions were obtained in accordance with literature, the first one located at the very periphery of the conduction channel, neighbouring the SiO 4 tetrahedral units, and the second one closer to the channel axis. The corresponding PDFs and average structures were then calculated and tested against experimental PDFs obtained by X-ray total scattering and NPD Rietveld refinements results gathered from literature. It was shown that of the two stable interstitial positions obtained with DFT only the second one located within the channel is consistent with experimental data. This result consolidates one of the two main conduction mechanisms along the c-axis reported in the literature, namely the one involving cooperative movement of O4 and Oi ions.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Science.gov (United States)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Energy Technology Data Exchange (ETDEWEB)

Lei, Hao, E-mail: haolei@imr.ac.cn [State Key Laboratory for Corrosion and Protection, Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Meihan [College of Mechanical Engineering, Shenyang University, Shenyang 110044 (China); Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka [Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297 (Japan)

2013-11-15

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Numerical model analysis of the shaded dye-sensitized solar cell module

International Nuclear Information System (INIS)

Chen Shuanghong; Weng Jian; Huang Yang; Zhang Changneng; Hu Linhua; Kong Fantai; Wang Lijun; Dai Songyuan

2010-01-01

On the basis of a numerical model analysis, the photovoltaic performance of a partially shadowed dye-sensitized solar cell (DSC) module is investigated. In this model, the electron continuity equation and the Butler-Vollmer equation are applied considering electron transfer via the interface of transparent conducting oxide/electrolyte in the shaded DSC. The simulation results based on this model are consistent with experimental results. The influence of shading ratio, connection types and the intensity of irradiance has been analysed according to experiments and numerical simulation. It is found that the performance of the DSC obviously declines with an increase in the shaded area due to electron recombination at the TCO/electrolyte interface and that the output power loss of the shadowed DSC modules in series is much larger than that in parallel due to the 'breakdown' occurring at the TCO/electrolyte interface. The impact of shadow on the DSC performance is stronger with increase in irradiation intensity.

The effect of the series resistance in dye-sensitized solar cells explored by electron transport and back reaction using electrical and optical modulation techniques

International Nuclear Information System (INIS)

Liu Weiqing; Hu Linhua; Dai Songyuan; Guo Lei; Jiang Nianquan; Kou Dongxing

2010-01-01

The influence of the series resistance on the electron transport and recombination processes in dye-sensitized solar cells (DSC) has been investigated. The series resistances induced by some parts of DSC, such as the transparent conductive oxide (TCO), the electrolyte layer and the counter electrode, influence the performance of DSC. By combining three frequency-domain techniques, specifically electrochemical impedance spectroscopy (EIS), intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS), we studied the relationship between the series resistance and the dynamic response of DSC. The results show that the series resistance induced by the TCO or counter electrode predominantly affects the electron transport under short circuit conditions and has no significant influence on the recombination under open circuit conditions. However, the resistance related to the electrolyte layer not only limits the carrier transport but also influences the recombination. Possible reasons for the influence of the series resistance on the electron transport and recombination processes in DSC are also discussed.

Development of uranium dioxide fuel pellets with addition of beryllium oxide for increasing of thermal conductivity

International Nuclear Information System (INIS)

Queiroz, Carolinne Mol; Ferreira, Ricardo Alberto Neto

2011-01-01

The CDTN - Centro de Desenvolvimento de Tecnologia Nuclear presents a project named 'Beryllium Project' viewing to increasing the thermal conductivity of UO 2 fuel pellets, increasing the lifetime of those pellets in the reactor, generating a greater economy. This increase of conductivity is obtained by means of Be O addition to the UO 2 fuel pellets, which is very used for the production of nuclear energy. The UO 2 pellets however present a thermal conductivity relatively low, generating a high temperature gradient between the center and his side surface. The addition of beryllium oxide, with higher thermal conductivity gives pellets which will present lower temperature gradient and, consequently, more durability and better utilization of energy potential of the pellet in the reactor. (author)

Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Science.gov (United States)

Ali, D.; Butt, M. Z.; Coughlan, C.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

2018-04-01

We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 ∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using i n situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 ×10 -3Ω cm , high optical quality (T ≈90 % ), and sheet resistance of 32 Ω /□ has been obtained without any need for postgrowth treatments.

An experimental correlation approach for predicting thermal conductivity of water-EG based nanofluids of zinc oxide

Science.gov (United States)

Ahmadi Nadooshan, Afshin

2017-03-01

In this study, the effects of temperature (20 °Cconductivity of zinc oxide/ethylene glycol-water nanofluid have been presented. Nanofluid samples were prepared by a two-step method and thermal conductivity measurements were performed by a KD2 pro instrument. Results showed that the thermal conductivity increases uniformly with increasing solid volume fraction and temperature. The results also revealed that the thermal conductivity of nanofluids significantly increases with increasing solid volume fraction at higher temperatures. Moreover, it can be seen that for more concentrated samples, the effect of temperature was more tangible. Experimental thermal conductivity enhancement of the nanofluid in comparison with the Maxwell model indicated that Maxwell model was unable to predict the thermal conductivity of the present nanofluid. Therefore, a new correlation was presented for predicting the thermal conductivity of ZnO/EG-water nanofluid.

Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

Science.gov (United States)

MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

2012-11-27

We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

Hydrophilicity Reinforced Adhesion of Anodic Alumina Oxide Template Films to Conducting Substrates for Facile Fabrication of Highly Ordered Nanorod Arrays.

Science.gov (United States)

Wang, Chuanju; Wang, Guiqiang; Yang, Rui; Sun, Xiangyu; Ma, Hui; Sun, Shuqing

2017-01-17

Arrays of ordered nanorods are of special interest in many fields. However, it remains challenging to obtain such arrays on conducting substrates in a facile manner. In this article, we report the fabrication of highly ordered and vertically standing nanorod arrays of both metals and semiconductors on Au films and indium tin oxide glass substrates without an additional layering. In this approach, following the simple hydrophilic treatment of an anodic aluminum oxide (AAO) membrane and conducting substrates, the AAO membrane was transferred onto the modified substrates with excellent adhesion. Subsequently, nanorod arrays of various materials were electrodeposited on the conducting substrates directly. This method avoids any expensive and tedious lithographic and ion milling process, which provides a simple yet robust route to the fabrication of arrays of 1D materials with high aspect ratio on conducting substrates, which shall pave the way for many practical applications in a range of fields.

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

OpenAIRE

Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

2016-01-01

Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

2015 Progress Report/July 2016: Iron Oxide Redox Transformation Pathways: The Bulk Electrical Conduction Mechanism

Energy Technology Data Exchange (ETDEWEB)

Scherer, Michelle M. [Univ. of Iowa, Iowa City, IA (United States); Rosso, Kevin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2016-07-25

Despite decades of research on the reactivity and stable isotope properties of Fe oxides, the ability to describe the redox behavior of Fe oxides in the environment is still quite limited. This is due, in large part, to the analytical and spatial complexities associated with studying microscopic processes at the Fe oxide-water interface. This project had the long-term vision of filling this gap by developing a detailed understanding of the relationship between interfacial ET processes, surface structure and charge, and mineral semiconducting properties. We focused on the Fe(III)-oxides and oxyhydroxides because of their geochemical preponderance, versatility in synthesis of compositionally, structurally, and morphologically tailored phases, and because they are amenable to a wide range of surface and bulk properties characterization. In particular, reductive transformation of phases such as hematite (α-Fe₂O₃) and goethite (α-FeOOH) in aqueous solution can serve as excellent model systems for studies of electron conduction processes, as well as provide valuable insights into effect of nanoscale conductive materials on contaminant fate at DOE sites. More specifically, the goal of the Iowa component of this project was to use stable Fe isotope measurements to simultaneously measure isotope specific oxidation states and concentrations of Fe at the hematite-water and goethite-water interface. This work builds on our previous work where we used an innovative combination of ⁵⁷Fe Mössbauer spectroscopy and high precision isotope ratio measurements (MC-ICP-MS) to probe the dynamics of the reaction of aqueous Fe(II) with goethite. Mössbauer spectroscopy detects ⁵⁷Fe only among all other Fe isotopes and we have capitalized on this to spectroscopically demonstrate Fe(II)-Fe(III) electron transfer between sorbed Fe(II) and Fe(III) oxides (Handler, et al., 2009; Gorski, et al. 2010; Rosso et al., 2010). By combining the M�

Electrochemical supercapacitors of cobalt hydroxide nanoplates grown on conducting cadmium oxide base-electrodes

Directory of Open Access Journals (Sweden)

Kailas K. Tehare

2017-05-01

Full Text Available Dopant-free and cost-effective sprayed cadmium oxide (CdO conducting base-electrodes, obtained at different concentrations (0.5, 1 and 1.5 M, characterized for their structures, morphologies and conductivities by using X-ray diffraction, scanning electron microscopy and electrical conductivity measurements, respectively, are employed as base-electrodes for growing cobalt hydroxide (Co(OH2 nanoplates using a simple electrodeposition method which further are envisaged for electrochemical supercapacitor application. Polycrystalline nature and mushroom-like plane-views are confirmed from the structure and morphology analyses. Both CdO and CdO–Co(OH2 electrodes reveal specific capacitances as high as 312 F g−1 and 1119 F g−1, respectively, in 0.1 M KOH electrolyte at 10 mV s−1 sweep rate. Optimized Co(OH2–CdO configuration electrode demonstrates energy density of 98.83 W h kg−1 and power density of 0.75 kW kg−1. In order to investigate the charge transfer kinematics electrochemical impedance measurements are carried out and explored.

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

Science.gov (United States)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

International Nuclear Information System (INIS)

Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

2015-01-01

This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

Fibrous flexible solid-type dye-sensitized solar cells without transparent conducting oxide

International Nuclear Information System (INIS)

Fan Xing; Chu Zengze; Chen Lin; Zhang Chao; Wang Fuzhi; Tang Yanwei; Sun Jianliang; Zou Dechun

2008-01-01

We have explored a type of all-solid fibrous flexible dye-sensitized solar cells without transparent conducting oxide based on a CuI electrolyte. The working electrode's substrate is a metal wire. Cu wire counterelectrode is twisted with the dye-sensitized and CuI-coated working electrode. The cell's apparent diameter is about 150 μm. The cell's current-voltage output depends little on the incident angle of light. A 4-cm-long fibrous cell's open-circuit voltage and short-circuit current generate 304 mV and 0.032 mA, respectively. The interfacial interaction between the two electrodes has a significant influence on the inner charge transfer of the cell

Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Hongsingthong, Aswin, E-mail: aswin.hongsingthong@nectec.or.th [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Krajangsang, Taweewat; Limmanee, Amornrat; Sriprapha, Kobsak; Sritharathikhun, Jaran [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Konagai, Makoto [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, NE-15, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2013-06-30

Zinc oxide (ZnO) films with a very high haze ratio and low resistivity were developed on soda–lime glass substrate by using reactive ion etching (RIE) treatment with carbon tetrafluoride (CF{sub 4}) to modify the substrate surface morphology before the deposition of ZnO films. We found that the surface morphology of the ZnO films deposited by metal organic chemical vapor deposition (MOCVD) technique could be modified by varying the glass treatment conditions and the gas pressure was a key parameter. With increasing glass-etching pressure, the surface morphology of the ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like double texture, leading to significant increases in root mean square roughness and haze ratio of the films. By employing the developed high-haze ZnO films as a front transparent conductive oxide (TCO) layer in microcrystalline silicon solar cells, an enhancement in the quantum efficiency in the long-wavelength region has been achieved. Experimental results have verified that our unique and original glass etching treatment is a simple and effective technique to improve the light-scattering properties of the ZnO films while preserving their good transparency and electrical properties. Thus, the ZnO films deposited on etched soda–lime glass have a high potential for the use as a front TCO layer in thin-film Si solar cells. - Highlights: • High-haze zinc oxide (ZnO) grown on low cost soda–lime glass has been developed. • Surface of the ZnO can be modified by varying glass-substrate etching conditions. • Glass-etching pressure is a key to increase haze ratio of the ZnO films. • Higher cell efficiency has been achieved from cell using etched glass. • High-haze ZnO coated glass is a promising transparent conductive oxide coated glass.

Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells

International Nuclear Information System (INIS)

Hongsingthong, Aswin; Krajangsang, Taweewat; Limmanee, Amornrat; Sriprapha, Kobsak; Sritharathikhun, Jaran; Konagai, Makoto

2013-01-01

Zinc oxide (ZnO) films with a very high haze ratio and low resistivity were developed on soda–lime glass substrate by using reactive ion etching (RIE) treatment with carbon tetrafluoride (CF 4 ) to modify the substrate surface morphology before the deposition of ZnO films. We found that the surface morphology of the ZnO films deposited by metal organic chemical vapor deposition (MOCVD) technique could be modified by varying the glass treatment conditions and the gas pressure was a key parameter. With increasing glass-etching pressure, the surface morphology of the ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like double texture, leading to significant increases in root mean square roughness and haze ratio of the films. By employing the developed high-haze ZnO films as a front transparent conductive oxide (TCO) layer in microcrystalline silicon solar cells, an enhancement in the quantum efficiency in the long-wavelength region has been achieved. Experimental results have verified that our unique and original glass etching treatment is a simple and effective technique to improve the light-scattering properties of the ZnO films while preserving their good transparency and electrical properties. Thus, the ZnO films deposited on etched soda–lime glass have a high potential for the use as a front TCO layer in thin-film Si solar cells. - Highlights: • High-haze zinc oxide (ZnO) grown on low cost soda–lime glass has been developed. • Surface of the ZnO can be modified by varying glass-substrate etching conditions. • Glass-etching pressure is a key to increase haze ratio of the ZnO films. • Higher cell efficiency has been achieved from cell using etched glass. • High-haze ZnO coated glass is a promising transparent conductive oxide coated glass

Determination of chemical state of Al doping element in ZnO layer

International Nuclear Information System (INIS)

Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

2011-01-01

Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires

Directory of Open Access Journals (Sweden)

Koo B.-R.

2017-06-01

Full Text Available We fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.

Effect of α-lipoic acid combined with nerve growth factor on bone metabolism, oxidative stress and nerve conduction function after femoral fracture surgery

Directory of Open Access Journals (Sweden)

An-Jun Cao

2017-11-01

Full Text Available Objective: To discuss the effect of 毩 -lipoic acid combined with nerve growth factor on bone metabolism, oxidative stress and nerve conduction function after femoral fracture surgery. Methods: A total of 110 patients with femoral fracture who received surgical treatment in the hospital between January 2015 and January 2017 were collected and divided into the control group (n=55 and study group (n=55 by random number table. Control group received postoperative nerve growth factor therapy, and study group received postoperative 毩 -lipoic acid combined with nerve growth factor therapy. The differences in the contents of bone metabolism and oxidative stress indexes as well as the levels of nerve conduction function indexes were compared between the two groups before and after treatment. Results: Before treatment, the differences in the contents of bone metabolism and oxidative stress indexes as well as the levels of nerve conduction function indexes were not statistically significant between the two groups. After treatment, serum bone metabolism indexes BGP and PⅠNP contents of study group were higher than those of control group while CTX-Ⅰ and TRAP contents were lower than those of control group; serum oxidative stress indexes TAC, CAT and SOD contents of study group were higher than those of control group while MDA content was lower than that of control group; limb nerve conduction velocity SCV and MCV levels of study group were higher than those of control group. Conclusion: 毩 -lipoic acid combined with nerve growth factor therapy after femoral fracture surgery can effectively balance osteoblast/ osteoclast activity, reduce oxidative stress and improve limb nerve conduction velocity.

Effect of Time and Deposition Method on Quality of Phosphonic Acid Modifier Self-Assembled Monolayers on Indium Zinc Oxide

Energy Technology Data Exchange (ETDEWEB)

Sang, Lingzi; Knesting, Kristina M.; Bulusu, Anuradha; Sigdel, Ajaya K.; Giordano, Anthony J.; Marder, Seth R.; Berry, Joseph J.; Graham, Samuel; Ginger, David S.; Pemberton, Jeanne E.

2016-12-15

Phosphonic acid (PA) self-assembled monolayers (SAMs) are utilized at critical interfaces between transparent conductive oxides (TCO) and organic active layers in organic photovoltaic devices (OPVs). The effects of PA deposition method and time on the formation of close-packed, high-quality monolayers is investigated here for SAMs fabricated by solution deposition, micro-contact printing, and spray coating. The solution deposition isotherm for pentafluorinated benzylphosphonic acid (F5BnPA) on indium-doped zinc oxide (IZO) is studied using polarization modulation-infrared reflection-absorption spectroscopy (PM-IRRAS) at room temperature as a model PA/IZO system. Fast surface adsorption occurs within the first min; however, well-oriented high-quality SAMs are reached only after -48 h, presumably through a continual process of molecular adsorption/desorption and monolayer filling accompanied by molecular reorientation. Two other rapid, soak-free deposition techniques, micro-contact printing and spray coating, are also explored. SAM quality is compared for deposition of phenyl phosphonic acid (PPA), F13-octylphosphonic acid (F13OPA), and pentafluorinated benzyl phosphonic acid (F5BnPA) by solution deposition, micro-contact printing and spray coating using PM-IRRAS. In contrast to micro-contact printing and spray coating techniques, 48-168 h solution deposition at both room temperature and 70 degrees C result in contamination- and surface etch-free close-packed monolayers with good reproducibility. SAMs fabricated by micro-contact printing and spray coating are much less well ordered.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

Science.gov (United States)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

Science.gov (United States)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Czech Academy of Sciences Publication Activity Database

Rucavado, E.; Jeangros, Q.; Urban, D. F.; Holovský, Jakub; Remeš, Zdeněk; Duchamp, M.; Landucci, F.; Dunin-Borkowski, R.E.; Körner, W.; Elsässer, C.; Hessler-Wyser, A.; Morales-Masis, M.; Ballif, C.

2017-01-01

Roč. 95, č. 24 (2017), s. 1-9, č. článku 245204. ISSN 2469-9950 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : TCO * ZnO * ZnSnO * amorphous TCO * photothermal deflection spectroscopy * DFT Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

Science.gov (United States)

Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

2018-01-01

This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

Science.gov (United States)

Zhu, Jiayi; He, Junhui

2012-05-01

We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

Mesoporous silica wrapped with graphene oxide-conducting PANI nanowires as a novel hybrid electrode for supercapacitor

Science.gov (United States)

Javed, Mohsin; Abbas, Syed Mustansar; Siddiq, Mohammad; Han, Dongxue; Niu, Li

2018-02-01

A high charge-carrier transport is an important aim in the synthesis of nanostructures for an effective supercapacitor. This article describes a methodology to prepare mesoporous silica nanoparticles (MSNs) wrapped with graphene oxide (GO) together with conducting polyaniline (PANI) wires. The morphology and chemical structure of the prepared samples have been tested by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and X-ray diffraction (XRD), whereas the stability and electrostatic interaction of the structures have been verified by thermogravimetric analysis (TGA) and Fourier-transform infrared (FT-IR) spectroscopy, respectively. The supercapacitive behaviour of these nanocomposites has been analysed by cyclic voltammetry (CV), charge-discharge tests, and electrochemical impedance spectroscopy (EIS). Compared with pristine MSNs and PANI, the 20%-GO@MSNs/PANI nanocomposite had the highest specific capacitance, reaching 412 F g-1. The nanocomposite structure maximizes the synergy between mesoporous metal oxide, conducting PANI, and GO, yielding a significantly enhanced specific capacitance, rapid charge-discharge rates, and good cycling stability of the resulting device. The wrapping with GO prevents the structural breakdown and acts as a highly conductive pathway by bridging the individual particles, whereas the MSNs nanoparticles greatly enlarge the specific surface area to facilitate ion transport and charge transfer throughout the cycling performance of supercapacitor. The approach adopted in this article can be applied for preparing similar novel functional materials in future for electrochemical applications.

Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of thin-film solar cell manufacturing technology (Development of material/substrate manufacturing technology - Development of amorphous silicon-based high-quality material/substrate manufacturing technology); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu - amorphous silicon kei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

The project aims to enhance the stability of amorphous solar cells. For elevating TCO (transparent conductive oxide) substrate transmittance to an ultrahigh level and for obtaining amorphous layers less to suffer photodegradation, efforts were made to develop substrate materials stable upon exposure to plasma and low in defect density. In the study of TCO, a high-transmittance glass substrate was employed and TCO was made thinner, and the specimen achieved transmittance of 91.3% or 6.3% over that of the conventional type. In the study of low reflection films, it was found that their transmittance came to be stable and remain so after 150 days after a weatherproof test. In the study for stability enhancement, optimization was carried out for a plasma resisting Ga{sub 2}O{sub 3}-added ZnO film for the manufacture of a substrate material capable of properly behaving in a high-speed a-Si film fabrication process. Low-temperature film fabrication was studied to enable low-cost manufacturing, and it was learned that a 4 times 10{sup -4} ohm/cm low-resistance film was obtained by sputtering Ga{sub 2}O{sub 3}-added ZnO where magnetism was intensive at room temperature, that films excellent in crystallinity were obtained by the same method even at low temperatures, and so forth. (NEDO)

Spectral and optical performance of electrochromic poly(3,4-ethylenedioxythiophene) (PEDOT) deposited on transparent conducting oxide coated glass and polymer substrates

International Nuclear Information System (INIS)

Sindhu, S.; Narasimha Rao, K.; Ahuja, Sharath; Kumar, Anil; Gopal, E.S.R.

2006-01-01

Electrochromic devices utilizing conjugated polymers as electrochromic layers have gained increasing attention owing to their optical properties, fast switching times and contrast ratios. Polyethylenedioxythiophene (PEDOT) is an excellent material from its electrochromic properties, high conductivity and high stability in the doped form. Aqueous dispersions of PEDOT were either spin coated or electro-polymerized on transparent conducting oxide coated glass and polyethylene tetraphthalate (PET) film substrates. The spectro- and opto-electrochemical studies of the films on transparent conducting oxide coated glass/PET substrates were performed. These films have application in the fabrication of electrochromic windows (smart windows). Smart window devices having excellent switching characteristics over wide range of temperature are used for glazing applications. The aerospace industry is interested in the development of visors and windows that can control glare for pilots and passengers, especially if the coatings can be made on curved surfaces and electrically conducting

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

Science.gov (United States)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Ionic conductivity in new perovskite type oxides: NaAZrMO{sub 6} (A = Ca or Sr; M = Nb or Ta)

Energy Technology Data Exchange (ETDEWEB)

Rajendran, Deepthi N.; Ravindran Nair, K. [Regional Research Laboratory (CSIR), Trivandrum 695019 (India); Prabhakar Rao, P. [Regional Research Laboratory (CSIR), Trivandrum 695019 (India)], E-mail: padala_rao@yahoo.com; Sibi, K.S.; Koshy, Peter [Regional Research Laboratory (CSIR), Trivandrum 695019 (India); Vaidyan, V.K. [Department of Physics, University of Kerala, Trivandrum 695581 (India)

2008-06-15

New oxides of the type, NaAZrMO{sub 6} (M = Ca or Sr; M = Nb or Ta), have been prepared by the solid-state reaction technique. Phase identification by powder X-ray diffraction (XRD) shows that NaCaZrMO{sub 6} has orthorhombic perovskite type structure (Pnma) and NaSrZrMO{sub 6} has cubic perovskite type structure (Pm3m). The grain morphology observation by scanning electron microscope (SEM) shows well-sintered grains. ac impedance spectra and electrical conductivity measurements in air, oxygen and nitrogen atmospheres indicate that they are probable oxide ion conductors with ionic conductivities of the order of 10{sup -3} S cm{sup -1} at 750 deg. C.

Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

Science.gov (United States)

Singh, Hemant Kr.; Avasthi, D. K.; Aggarwal, Shruti

2015-06-01

Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO2:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In2O3:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag+9 ions at fluences ranging from 3.0 × 1011 ions/cm2 to 3.0 × 1013 ions/cm2. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

Electrochemical properties and electrocatalytic activity of conducting polymer/copper nanoparticles supported on reduced graphene oxide composite

Science.gov (United States)

Ehsani, Ali; Jaleh, Babak; Nasrollahzadeh, Mahmoud

2014-07-01

Reduced graphene oxide (rGO) was used to support Cu nanoparticles. As electro-active electrodes for supercapacitors composites of reduced graphene oxide/Cu nanoparticles (rGO/CuNPs) and polytyramine (PT) with good uniformity are prepared by electropolymerization. Composite of rGO/CuNPs-PT was synthesized by cyclic voltammetry (CV) methods and electrochemical properties of film were investigated by using electrochemical techniques. The results show that, the rGO/CuNPs-PT/G has better capacitance performance. This is mainly because of the really large surface area and the better electronic and ionic conductivity of rGO/CuNPs-PT/G, which lead to greater double-layer capacitance and faradic pseudo capacitance. Modified graphite electrodes (rGO/CuNPs-PT/G) were examined for their redox process and electrocatalytic activities towards the oxidation of methanol in alkaline solutions. The methods of cyclic voltammetry (CV), chronoamperometry (CA) and electrochemical impedance spectroscopy (EIS) were employed. In comparison with a Cu-PT/G (Graphite), rGO/CuNPs-PT/G modified electrode shows a significantly higher response for methanol oxidation. A mechanism based on the electro-chemical generation of Cu(III) active sites and their subsequent consumptions by methanol have been discussed.

Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor

Directory of Open Access Journals (Sweden)

M. Manzanares

2009-01-01

Full Text Available The influence of charge localized at the surface of minute metal oxide nanocrystals was studied in WO3 and In2O3 nanostructures, which were obtained replicating mesoporous silica templates. Here, it is shown that the very high resistive states observed at room temperature and dark conditions were originated by the total shrinkage of the conductive zone in the inner part of these nanocrystals. On the contrary, at room temperature and under UV illumination, both photogenerated electron-hole pairs and empty surface states generated by photons diminished the negative charge accumulated at the surface, enlarging the conductive zone and, as a consequence, leading to a reduction of the electrical resistance. Under these conditions, empty surface states produced by UV light reacted with oxidizing gaseous molecules. The charge exchange associated to these reactions also affected the size of the inner conductive zone, and leaded to a new steady-state resistance. These chemical, physical and geometrical effects can be used for gas detection, and constitutes the basis for developing novel room temperature conductometric gas sensors responsive to oxidizing species.

Polyaniline: Aniline oxidation with strong and weak oxidants under various acidity

Energy Technology Data Exchange (ETDEWEB)

Bláha, Michal, E-mail: blaha@imc.cas.cz [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, 162 06 Prague 6 (Czech Republic); Trchová, Miroslava; Bober, Patrycja; Morávková, Zuzana [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, 162 06 Prague 6 (Czech Republic); Prokeš, Jan [Charles University, Faculty of Mathematics and Physics, 180 00 Prague 8 (Czech Republic); Stejskal, Jaroslav [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, 162 06 Prague 6 (Czech Republic)

2017-06-15

Aniline was oxidized with three strong inorganic oxidants (ammonium peroxydisulfate, cerium(IV) sulfate, potassium dichromate), two weak inorganic oxidants (iron(III) chloride, silver nitrate), and one organic oxidant (p-benzoquinone) in aqueous solutions of methanesulfonic acid (MSA) of various concentration. Whereas oxidation of aniline with ammonium peroxydisulfate yielded high-molecular-weight conducting polyaniline (PANI) in the whole acidity range, the oxidation with cerium(IV) sulfate led also to a single product close to PANI with considerably lower molecular weight and lower conductivity. Potassium dichromate gave PANI only at high concentration of MSA. The use of iron(III) chloride yielded composite mixtures of PANI and low-molecular-weight aniline oligomers. The oxidation of aniline with silver nitrate led to composites of silver and an organic part, which was constituted either by aniline oligomers or conducting polyaniline or both. p-Benzoquinone as oxidant produced mainly aniline oligomers with poor conductivity and 2,5-dianilino-p-benzoquinone-like structure detected in FTIR and Raman spectra when oxidation proceeded with weak oxidants. A general model of oxidation with strong and weak oxidants was formulated. - Highlights: • Comparison of aniline oxidation with oxidants of different redox potential. • UV–vis, FTIR and Raman spectroscopies combined with size-exclusion chromatography. • The contents of polymer and oligomers were analyzed and discussed. • General model of aniline oxidation with strong and weak oxidants was formulated.

Electrically conductive anodized aluminum coatings

Science.gov (United States)

Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

2001-01-01

A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

Retention of redox sensitive waste elements in compacted bentonite

International Nuclear Information System (INIS)

Torstenfelt, B.; Allard, B.

1984-01-01

The diffusion of technetium, iodine, uranium and neptunium in compacted bentonite has been studied. The possible reduction of the transport rate of these elements (i.e. redoxsensitive elements) by mixing the clay with metallic iron (for technetium, uranium and neptunium) or by adding a chemisorbent (for iodine) to the clay is reported. Technetium has an apparent diffusivity about 5 times higher in the heptavalent state (TcO 4 - ) than in the tetravalent state (TcO(OH) 2 or TcO 2 ), uranium and neptunium in their higher oxidation state (VI and V) have apparent diffusivities about 6 and 50 times higher, respectively, than in the tetravalent state. Iodine, as I - (or IO 3 - ), has a transport rate more than one order of magnitude lower than TcO 4 - . 10 references, 5 figures, 3 tables

Three-dimensional ionic conduction in the strained electrolytes of solid oxide fuel cells

International Nuclear Information System (INIS)

Han, Yupei; Zou, Minda; Lv, Weiqiang; He, Weidong; Mao, Yiwu; Wang, Wei

2016-01-01

Flexible power sources including fuel cells and batteries are the key to realizing flexible electronic devices with pronounced foldability. To understand the bending effects in these devices, theoretical analysis on three-dimensional (3-D) lattice bending is necessary. In this report, we derive a 3-D analytical model to analyze the effects of electrolyte crystal bending on ionic conductivity in flexible solid-state batteries/fuel cells. By employing solid oxide fuel cells as a materials' platform, the intrinsic parameters of bent electrolyte materials, including lattice constant, Young's modulus, and Poisson ratio, are evaluated. Our work facilitates the rational design of highly efficient flexible electrolytes for high-performance flexible device applications.

Y-doped BaZrO3 as a chemically stable electrolyte for proton-conducting solid oxide electrolysis cells (SOECs)

KAUST Repository

Bi, Lei

2015-01-01

A proton-conducting solid oxide electrolysis cell using an Y-doped BaZrO3 electrolyte film, which has been demonstrated to be chemically stable, was successfully fabricated for the first time and showed a promising electrolysis performance.

A method for determining an effective porosity correction factor for thermal conductivity in fast reactor uranium-plutonium oxide fuel pellets

International Nuclear Information System (INIS)

Inoue, Masaki; Abe, Kazuyuki; Sato, Isamu

2000-01-01

A reliable method has been developed for determining an effective porosity correction factor for calculating a realistic thermal conductivity for fast reactor uranium-plutonium (mixed) oxide fuel pellets. By using image analysis of the ceramographs of transverse sections of mixed-oxide fuel pellets, the fuel morphology could be classified into two basic types. One is a 'two-phase' type that consists of small pores dispersed in the fuel matrix. The other is a 'three-phase' type that has large pores in addition to the small pores dispersed in the fuel matrix. The pore sizes are divided into two categories, large and small, at the 30 μm area equivalent diameter. These classifications lead to an equation for calculating an effective porosity correction factor by accounting for the small and large pore volume fractions and coefficients. This new analytical method for determining the effective porosity correction factor for calculating the realistic thermal conductivity of mixed-oxide fuel was also experimentally confirmed for high-, medium- and low-density fuel pellets

Preparation of high surface area and high conductivity polyaniline nanoparticles using chemical oxidation polymerization technique

Science.gov (United States)

Budi, S.; Yusmaniar; Juliana, A.; Cahyana, U.; Purwanto, A.; Imaduddin, A.; Handoko, E.

2018-03-01

In this work, polyaniline nanoparticles were synthesized using a chemical oxidation polymerization technique. The ammonium peroxydisulfate (APS)/aniline ratio, APS dropping time, and polymerization temperature were optimized to increase the surface area and conductivity of the polyaniline.The Fourier-transform infrared (FTIR) spectrum confirmed the formation of emeraldine salt polyaniline. X-ray diffraction (XRD) patterns indicated that amorphous and crystalline phases of the polyaniline were formed with crystallinity less than 40%. Scanning electron microscope (SEM) micrographs showed that the finest nanoparticles with uniform size distribution were obtained at the polymerization temperature of 0°C. A surface area analyzer (SAA) showed that the highest Brunauer-Emmett-Teller surface area (SBET ) of 42.14 m2/gwas obtained from an APS/aniline ratio of 0.75 with a dropping time of 0 s at a polymerization temperature of 0°C. A four-point probe measurement conducted at 75–300K indicated relatively high conductivity of the semiconductor characteristic of the polyaniline.

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Directory of Open Access Journals (Sweden)

Krawczak Ewelina

2017-01-01

Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

International Nuclear Information System (INIS)

Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

2012-01-01

Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

Redox behavior of Tc(VII)/Tc(IV) under various reducing conditions in 0.1 M NaCl solutions

International Nuclear Information System (INIS)

Kobayashi, T.; Gaona, X.; Altmaier, M.; Scheinost, A.C.; Fellhauer, D.; European Commission Joint Research Centre, Karlsruhe

2013-01-01

Redox behaviour of Tc(VII)/Tc(IV) was investigated in 0.1 M NaCl solutions containing different reducing agents in the pH range 2 to 13 at 22 C under inert Ar atmosphere. In several samples, the 1 x 10 -5 mol/dm 3 (M) initially added TcO 4 - was reduced to form a Tc(IV) oxide solid phase with low solubility. The observed Tc redox transformation processes are systematized according to E h -pH conditions in solution, indicating that a borderline for the reduction of Tc(VII) to Tc(IV), TcO 4 - + 3e - + 4H + TcO 2 . xH 2 O(coll, hyd) + (2-x)H 2 O exists, independent of the reducing chemical system. This experimentally derived borderline is about 100 mV lower than the equilibrium line calculated from the reported standard redox potential of TcO 2 . 1.6H 2 O(s). This behaviour can be related to the existence of more soluble solid phase modifications, i.e. nanoparticulate Tc(IV) oxide species TcO 2 . xH 2 O(coll, hyd). The reaction kinetics likewise correlate to the redox potential measured in solution. Slow reduction of Tc(VII) to Tc(IV) was observed when the redox potential in the system was slightly below the above mentioned reduction borderline. Fast reduction was observed in the systems far below the borderline, but also in those systems containing Fe(II) solids, suggesting a specific surface mediated effect in the reduction process. EXAFS analysis on two magnetite samples indicate reduced Tc(IV) species which do not remain adsorbed at the reactive mineral surface and are incorporated in the magnetite structure. (orig.)

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

Directory of Open Access Journals (Sweden)

H. J. Harsan Ma

2015-08-01

Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

Interface polymerization synthesis of conductive polymer/graphite oxide@sulfur composites for high-rate lithium-sulfur batteries

International Nuclear Information System (INIS)

Wang, Xiwen; Zhang, Zhian; Yan, Xiaolin; Qu, Yaohui; Lai, Yanqing; Li, Jie

2015-01-01

Highlights: • A hybrid nanostructure that incorporate the merits of conductive polymer nanorods and graphite oxide sheets. • A novel approach based on interface polymerization for synthesizing CP/GO@S ternary composite. • CP/GO@S ternary composite cathode shows enhanced electrochemical properties compared with CP@S binary composite cathode. • PEDOT/GO@S composite is the material system that have best electrochemical performance in all CP/GO@S ternary composites. - Abstract: The novel ternary composites, conductive polymers (CPs)/graphene oxide (GO)@sulfur composites were successfully synthesized via a facile one-pot route and used as cathode materials for Li-S batteries The poly(3,4-ethylenedioxythiophene) (PEDOT)/GO and polyaniline (PANI)/GO composites were prepared by interface polymerization of monomers on the surface of GO sheets. Then sulfur was in-situ deposited on the CPs/GO composites in same solution. The component and structure of the composites were characterized by XPS, TGA, FTIR, SEM, TEM and electrochemical measurements. In this structure, the CPs nanostructures are believed to serve as a conductive matrix and an adsorbing agent, while the highly conductive GO will physically and chemically confine the sulfur and polysulfide within cathode. The PEDOT/GO@S composites with the sulfur content of 66.2 wt% exhibit a reversible discharge capacity of 800.2 mAh g −1 after 200 cycles at 0.5 C, which is much higher than that of PANI/GO@S composites (599.1 mAh g −1 ) and PANI@S (407.2 mAh g −1 ). Even at a high rate of 4 C, the PEDOT/GO@S composites still retain a high specific capacity of 632.4 mAh g −1

Defect Chemistry and Electrical Conductivity of Sm-Doped La1-xSrxCoO3-δ for Solid Oxide Fuel Cells

DEFF Research Database (Denmark)

Björketun, Mårten; Castelli, Ivano Eligio; Rossmeisl, Jan

2017-01-01

We have calculated the electrical conductivity of the solid oxide fuel cell (SOFC) cathode contact material La1-xSrxCoO3-δ at 900 K. Experimental trends in conductivity against x, and against δ for fixed x, are correctly reproduced for x ≲ 0.8. Furthermore, we have studied the chemistry of neutral...

Exergy and exergoeconomic analyses of a supercritical CO_2 cycle for a cogeneration application

International Nuclear Information System (INIS)

Wang, Xurong; Yang, Yi; Zheng, Ya; Dai, Yiping

2017-01-01

Detailed exergy and exergoeconomic analyses are performed for a combined cogeneration cycle in which the waste heat from a recompression supercritical CO_2 Brayton cycle (sCO_2) is recovered by a transcritical CO_2 cycle (tCO_2) for generating electricity. Thermodynamic and exergoeconomic models are developed on the basis of mass and energy conservations, exergy balance and exergy cost equations. Parametric investigations are then conducted to evaluate the influence of key decision variables on the sCO_2/tCO_2 performance. Finally, the combined cycle is optimized from the viewpoint of exergoeconomics. It is found that, combining the sCO_2 with a tCO_2 cycle not only enhances the energy and exergy efficiencies of the sCO_2, but also improves the cycle exergoeconomic performance. The results show that the most exergy destruction rate takes place in the reactor, and the components of the tCO_2 bottoming cycle have less exergy destruction. When the optimization is conducted based on the exergoeconomics, the overall exergoeconomic factor, the total cost rate and the exergy destruction cost rate are 53.52%, 11243.15 $/h and 5225.17 $/h, respectively. The optimization study reveals that an increase in reactor outlet temperature leads to a decrease in total cost rate and total exergy destruction cost rate of the system. - Highlights: • Exergy and exergoeconomic analyses of a combined sCO_2/tCO_2 cycle were performed. • Exergoeconomic optimization of the sCO_2/tCO_2 cycle was presented. • The reactor had the highest exergy loss among sCO_2/tCO_2 cycle components. • The overall exergoeconomic factor was up to 53.5% for the optimum case.

Using Coupled Mesoscale Experiments and Simulations to Investigate High Burn-Up Oxide Fuel Thermal Conductivity

Science.gov (United States)

Teague, Melissa C.; Fromm, Bradley S.; Tonks, Michael R.; Field, David P.

2014-12-01

Nuclear energy is a mature technology with a small carbon footprint. However, work is needed to make current reactor technology more accident tolerant and to allow reactor fuel to be burned in a reactor for longer periods of time. Optimizing the reactor fuel performance is essentially a materials science problem. The current understanding of fuel microstructure have been limited by the difficulty in studying the structure and chemistry of irradiated fuel samples at the mesoscale. Here, we take advantage of recent advances in experimental capabilities to characterize the microstructure in 3D of irradiated mixed oxide (MOX) fuel taken from two radial positions in the fuel pellet. We also reconstruct these microstructures using Idaho National Laboratory's MARMOT code and calculate the impact of microstructure heterogeneities on the effective thermal conductivity using mesoscale heat conduction simulations. The thermal conductivities of both samples are higher than the bulk MOX thermal conductivity because of the formation of metallic precipitates and because we do not currently consider phonon scattering due to defects smaller than the experimental resolution. We also used the results to investigate the accuracy of simple thermal conductivity approximations and equations to convert 2D thermal conductivities to 3D. It was found that these approximations struggle to predict the complex thermal transport interactions between metal precipitates and voids.

Development of Lithium Stuffed Garnet-Type Oxide Solid Electrolytes with High Ionic Conductivity for Application to All-Solid-State Batteries

Directory of Open Access Journals (Sweden)

Ryoji Inada

2016-07-01

Full Text Available All-solid-state lithium-ion battery (LiB is expected as one of the next generation energy storage devices because of their high energy density, high safety and excellent cycle stability. Although oxide-based solid electrolyte materials have rather lower conductivity and poor deformability than sulfide-based one, they have other advantages such as their chemical stability and easiness for handling. Among the various oxide-based SEs, lithium stuffed garnet-type oxide with the formula of Li7La3Zr2O12 (LLZ have been widely studied because of their high conductivity above 10-4 Scm-1 at room temperature, excellent thermal performance and stability against Li metal anode.Here, we present our recent progress for the development of garnet-type solid electrolytes with high conductivity by simultaneous substitution of Ta5+ into Zr4+ site and Ba2+ into La3+ site in LLZ. Li+ concentration was fixed to 6.5 per chemical formulae, so that the formulae of our Li garnet-type oxide is expressed as Li6.5La3-xBaxZr1.5-xTa0.5+xO12 (LLBZT and Ba contents x are changed from 0 to 0.3. As results, all LLBZT samples have cubic garnet structure without containing any secondary phases. The lattice parameters of LLBZT decrease with increasing Ba2+ contents x < 0.10 while increase with x from 0.10 to 0.30, possibly due to the simultaneous change of Ba2+ and Ta5+ substitution levels. Relative densities of LLBZT are in the range between 89% and 93% and not influenced so much by the compositions. From AC impedance spectroscopy measurements, the total (bulk + grain conductivity at 27ºC of LLBZT shows its maximum value of 8.34 x 10-4 S cm-1 at x = 0.10, which is slightly higher than the conductivity (= 7.94 x 10-4 S cm-1 of LLZT without substituting Ba (x = 0. Activation energy of the conductivity tends to become lower by Ba substation, while excess Ba substitution degrades the conductivity in LLBZT. LLBZT has wide electrochemical potential window of 0-6 V vs. Li+/Li and

Pentacene ohmic contact on the transparent conductive oxide films

International Nuclear Information System (INIS)

Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

2010-01-01

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

Increase of thermal conductivity of uranium dioxide nuclear fuel pellets with beryllium oxide addition

International Nuclear Information System (INIS)

Camarano, D.M.; Mansur, F.A.; Santos, A.M.M. dos; Ferraz, W.B.

2016-01-01

The UO_2 fuel is one of the most used nuclear fuel in thermal reactors and has many advantages such as high melting point, chemical compatibility with cladding, etc. However, its thermal conductivity is relatively low, which leads to a premature degradation of the fuel pellets due to a high radial temperature gradient during reactor operation. An alternative to avoid this problem is to increase the thermal conductivity of the fuel pellets, by adding beryllium oxide (BeO). Pellets of UO_2 and UO_2-BeO were obtained from a homogenized mixture of powders of UO_2 and BeO, containing 2% and 3% by weight of BeO and sintering at 1750 °C for 3 h under H_2 atmosphere after uniaxial pressing at 400 MPa. The pellet densities were obtained by xylol penetration-immersion method and the thermal diffusivity, specific heat and thermal conductivity were determined according to ASTM E-1461 at room temperature (25 deg C) and 100 deg C. The thermal diffusivity measurements were carried out employing the laser flash method. The thermal conductivity obtained at 25 deg C showed an increase with the addition of 2% and 3% of BeO corresponding to 19% and 28%, respectively. As for the measurements carried out at 100 deg C, there was an increase in the thermal conductivity for the same BeO contents of 20% and 31%. These values as a percentage of increased conductivity were obtained in relation to the UO_2 pellets. (author)

ITO Modification for Efficient Inverted Organic Solar Cells.

Science.gov (United States)

Susarova, Diana K; Akkuratov, Alexander V; Kukharenko, Andrey I; Cholakh, Seif O; Kurmaev, Ernst Z; Troshin, Pavel A

2017-10-03

We demonstrate a facile approach to designing transparent electron-collecting electrodes by depositing thin layers of medium and low work function metals on top of transparent conductive metal oxides (TCOs) such as ITO and FTO. The modified electrodes were fairly stable for months under ambient conditions and maintained their electrical characteristics. XPS spectroscopy data strongly suggested integration of the deposited metal in the TCO structure resulting in additional doping of the conducting oxide at the interface. Kelvin probe microscopy measurements revealed a significant decrease in the ITO work function after modification. Organic solar cells based on three different conjugated polymers have demonstrated state of the art performances in inverted device geometry using Mg- or Yb-modified ITO as electron collecting electrode. The simplicity of the proposed approach and the excellent ambient stability of the modified ITO electrodes allows one to expect their wide utilization in research laboratories and electronic industry.

Impedance spectroscopic analysis of composite electrode from activated carbon/conductive materials/ruthenium oxide for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Taer, E.; Awitdrus,; Farma, R. [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Physics, Faculty of Mathematics and Natural Sciences, University of Riau, 28293 Pekanbaru, Riau (Indonesia); Deraman, M., E-mail: madra@ukm.my; Talib, I. A.; Ishak, M. M.; Omar, R.; Dolah, B. N. M.; Basri, N. H.; Othman, M. A. R. [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Kanwal, S. [ICCBS, H.E.J. Research Institute of Chemistry, University of Karachi, 75270 Karachi (Pakistan)

2015-04-16

Activated carbon powders (ACP) were produced from the KOH treated pre-carbonized rubber wood sawdust. Different conductive materials (graphite, carbon black and carbon nanotubes (CNTs)) were added with a binder (polivinylidene fluoride (PVDF)) into ACP to improve the supercapacitive performance of the activated carbon (AC) electrodes. Symmetric supercapacitor cells, fabricated using these AC electrodes and 1 molar H{sub 2}SO{sub 4} electrolyte, were analyzed using a standard electrochemical impedance spectroscopy technique. The addition of graphite, carbon black and CNTs was found effective in reducing the cell resistance from 165 to 68, 23 and 49 Ohm respectively, and increasing the specific capacitance of the AC electrodes from 3 to 7, 17, 32 F g{sup −1} respectively. Since the addition of CNTs can produce the highest specific capacitance, CNTs were chosen as a conductive material to produce AC composite electrodes that were added with 2.5 %, 5 % and 10 % (by weight) electro-active material namely ruthenium oxide; PVDF binder and CNTs contents were kept at 5 % by weight in each AC composite produced. The highest specific capacitance of the cells obtained in this study was 86 F g{sup −1}, i.e. for the cell with the resistance of 15 Ohm and composite electrode consists of 5 % ruthenium oxide.

Conductivity in redox modified conducting polymers. In-situ conductivity of poly(cyclopentadithiophenes) bearing p-nitrophenyl and 4-N-methylpyridinium groups

Energy Technology Data Exchange (ETDEWEB)

Zotti, G. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Berlin, A. [Milan Univ. (Italy). Dipartimento di Chimica Organica e Industriale; Pagani, G. [Milan Univ. (Italy). Dipartimento di Chimica Organica e Industriale; Schiavon, G. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Zecchin, S. [Consiglio Nazionale delle Ricerche, (Italy). Istituto di Polarografia ed Elettrochimica Preparativa

1995-01-01

Redox-modified polythiophenes exhibiting the highest mixed-valence conductivities of any polymer containing a pendant redox group are reported. The ordering of the polymer, in which the backbone has been oxidized to a bipolaron conducting state and the redox sites have been reduced to a mixed-valence conducting state, encourages inter-site hopping and results in the high conductivities. Electron interactions are shown not have an influence on the conduction. (orig.)

Pyroelectric response of perovskite heterostructures incorporating conductive oxide electrodes

Science.gov (United States)

Tipton, Charles Wesley, IV

2000-10-01

The use of imaging technologies has become pervasive in many applications as the demand for situational awareness information has increased over the last decade. No better example of the integration of these technologies can be found than that of infrared or thermal imaging. This dissertation, in the field of thermal imaging, has been motivated by the desire to advance the technology of uncooled, thin-film pyroelectric sensors and focuses on the materials and structures from which the detector elements will be built. This work provides a detailed study of the pyroelectric response of the La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O (LPL) structure. The LPL structure was chosen based on the needs of thin film detectors, the unique properties of the conductive oxide La-Sr-Co-O (LSCO), and the broad applicability of the Pb-La-Zr-Ti-O (PLZT) material system. Epitaxial heterostructures were grown by pulsed laser deposition on single-crystal oxide substrates. Using the oxygen pressure during cooling and heating of the LSCO layer as a key variable, we have been able to produce structures that have a pronounced internal field in the as-grown state. In these capacitors, where the bottom electrode has a large concentration of oxygen vacancies, we have discovered very large pyroelectric responses that are 10 to 30 times larger than expected of PLZT-based pyroelectric materials (typical values are 20 to 40 nCcm-2K -1). The enhanced pyroelectric responses are very repeatable, stable over time, and distinctly different from responses attributed to thermally stimulated currents. Detailed positron annihilation spectroscopy measurements reveal that there is indeed an oxygen concentration gradient across the capacitor. Based on the results of this study, I will present an analysis of the enhanced pyroelectric response. Although the enhanced response has been correlated with high concentrations of oxygen vacancies in the PLZT film and LSCO electrodes, the mechanism by which the large

Electrical conductivity of molten carbonate and carbonate-chloride systems coexisting with aluminium oxide powder

Energy Technology Data Exchange (ETDEWEB)

Nikolaeva, Elena V. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation); Ural State Economic Univ., Yekaterinburg (Russian Federation); Bovet, Andrey L.; Zakiryanova, Irina D. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation)

2018-04-01

The electrical properties of composite electrolytes (suspensions) composed of α-Al{sub 2}O{sub 3} powder and molten carbonate eutectic (Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} or molten carbonate-chloride mixture 0.72(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut}-0.28NaCl have been investigated by AC impedance method. This system shows a dependence of the electrical conductivity upon the temperature and the α-Al{sub 2}O{sub 3} content. The specific electrical conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} system can be adequately described by the Maxwell equation for two-phase heterogeneous materials. The regression equation for the dependence of the specific conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} composite on the aluminium oxide concentration and temperature was obtained.

Conduction at domain walls in oxide multiferroics

Science.gov (United States)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Steam Electrolysis by Proton-Conducting Solid Oxide Electrolysis Cells (SOECs) with Chemically Stable BaZrO3-Based Electrolytes

KAUST Repository

Bi, Lei; Traversa, Enrico

2015-01-01

BaZrO3-based material was applied as the electrolyte for proton-conducting solid oxide fuel cells (SOECs). Compared with the instability of BaCeO3-based proton-conductors, BaZrO3-based material could be a more promising candidate for proton

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

International Nuclear Information System (INIS)

Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

2005-01-01

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

Effects of Xueshuantong combined with antioxidant drugs on nerve conduction function and oxidative stress in patients with diabetic peripheral neuropathy

Directory of Open Access Journals (Sweden)

Yuan-Zhen Chu

2017-07-01

Full Text Available Objective: To study the effect of Xueshuantong combined with antioxidant drugs on nerve conduction function and oxidative stress in patients with diabetic peripheral neuropathy. Methods: 138 cases of patients with diabetic peripheral neuropathy who were treated in endocrinology department of our hospital between June 2014 and October 2016 were enrolled and randomly divided into two groups. The combination group received Xueshuantong combined with antioxidant drug therapy, and the control group received antioxidant drug therapy. Before and after treatment, the nerve conduction velocity as well as serum content of oxidative stress indexes and nerve cytokines was measured. Results: 4 weeks and 8 weeks after treatment, common peroneal nerve and median nerve MNCV and SNCV as well as serum SOD, GSH-Px, HO-1, CAT, CNTF, BDNF and SDF-1α levels of both groups were significantly higher than those before treatment while serum MDA, AOPP and 8-OHdG levels were significantly lower than those before treatment, and common peroneal nerve and median nerve MNCV and SNCV as well as serum SOD, GSH-Px, HO-1, CAT, CNTF, BDNF and SDF-1α levels of combination group were significantly higher than those of control group while serum MDA, AOPP and 8-OHdG levels were significantly lower than those of control group. Conclusion: Xueshuantong combined with antioxidant drugs can improve the nerve conduction function, inhibit oxidative stress response and improve neurotrophy status in patients with diabetic peripheral neuropathy.

Preparation and proton conductivity of composite membranes based on sulfonated poly(phenylene oxide) and benzimidazole

International Nuclear Information System (INIS)

Liu Yifeng; Yu Qinchun; Wu Yihua

2007-01-01

The Bronsted acid-base composite membrane was prepared by entrapping benzimidazole in sulfonated poly(phenylene oxide) by tuning the doping ratios. Their thermal stability, dynamic mechanical properties and proton conductivity were investigated under the conditions for intermediate temperature proton exchange membrane (PEM) fuel cell operation. In addition, investigation of activation energies of the SPPO-xBnIm at different relative humidity was also performed. TG-DTA curves reveal these SPPO-xBnIm composite materials had the high thermal stability. The proton conductivity of SPPO-xBnIm composite material increased with the temperature, and the highest proton conductivity of SPPO-xBnIm composite materials was found to be 8.93 x 10 -4 S/cm at 200 deg. C under 35% relative humidity (RH) with a 'doping rate' where x = 2. The SPPO-2BnIm composite membrane show higher storage moduli and loss moduli than SPPO. Tests in a hydrogen-air laboratory cell demonstrate the applicability of SPPO-2BnIm in PEMFCs at intermediate temperature under non-humidified conditions

Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

NARCIS (Netherlands)

Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

2014-01-01

In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Directory of Open Access Journals (Sweden)

Diana E. Proffit

2010-11-01

Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

Ionic conductivity in polyethylene-b-poly(ethylene oxide)/lithium perchlorate solid polymer electrolytes

International Nuclear Information System (INIS)

Guilherme, L.A.; Borges, R.S.; Moraes, E. Mara S.; Silva, G. Goulart; Pimenta, M.A.; Marletta, A.; Silva, R.A.

2007-01-01

The ionic conductivity and phase arrangement of solid polymeric electrolytes based on the block copolymer polyethylene-b-poly(ethylene oxide) (PE-b-PEO) and LiClO 4 have been investigated. One set of electrolytes was prepared from copolymers with 75% of PEO units and another set was based on a blend of copolymer with 50% PEO units and homopolymers. The differential scanning calorimetry (DSC) results, for electrolytes based on the copolymer with 75% of PEO units, were dominated by the PEO phase. The PEO block crystallinity dropped and the glass transition increased with salt addition due to the coordination of the cation by PEO oxygen. The conductivity for copolymers 75% PEO-based electrolyte with 15 wt% of salt was higher than 10 -5 S/cm at room temperature and reached to 10 -3 S/cm at 100 deg. C on a heating measurement. The blend of PE-b-PEO (50% PEO)/PEO/PE showed a complex thermal behavior with decoupled melting of the blocks and the homopolymers. Upon salt addition the endotherms associated with PEO domains disappeared and the PE crystals remained untouched. The conductivity results were limited at 100 deg. C to values close to 10 -4 S/cm and at room temperature values close to 3 x 10 -6 S/cm were obtained for the 15 wt% salt electrolyte. Raman study showed that the ionic association of the highly concentrated blend electrolytes at room temperature is not significant. Therefore, the lower values of conductivity in the case of the blend with 50% PEO can be assigned to the higher content of PE domains leading to a morphology with lower connectivity for ionic conduction both in the crystalline and melted state of the PE domains

Electrode-Impregnable and Cross-Linkable Poly(ethylene oxide)-Poly(propylene oxide)-Poly(ethylene oxide) Triblock Polymer Electrolytes with High Ionic Conductivity and a Large Voltage Window for Flexible Solid-State Supercapacitors.

Science.gov (United States)

Han, Jae Hee; Lee, Jang Yong; Suh, Dong Hack; Hong, Young Taik; Kim, Tae-Ho

2017-10-04

We present cross-linkable precursor-type gel polymer electrolytes (GPEs) that have large ionic liquid uptake capability, can easily penetrate electrodes, have high ion conductivity, and are mechanically strong as high-performance, flexible all-solid-state supercapacitors (SC). Our polymer precursors feature a hydrophilic-hydrophobic poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO) triblock main-chain structure and trifunctional silane end groups that can be multi-cross-linked with each other through a sol-gel process. The cross-linked solid-state electrolyte film with moderate IL content (200 wt %) shows a well-balanced combination of excellent ionic conductivity (5.0 × 10 -3 S cm -1 ) and good mechanical stability (maximum strain = 194%). Moreover, our polymer electrolytes have various advantages including high thermal stability (decomposition temperature > 330 °C) and the capability to impregnate electrodes to form an excellent electrode-electrolyte interface due to the very low viscosity of the precursors. By assembling our GPE-impregnated electrodes and solid-state GPE film, we demonstrate an all-solid-state SC that can operate at 3 V and provides an improved specific capacitance (112.3 F g -1 at 0.1 A g -1 ), better rate capability (64% capacity retention until 20 A g -1 ), and excellent cycle stability (95% capacitance decay over 10 000 charge/discharge cycles) compared with those of a reference SC using a conventional PEO electrolyte. Finally, flexible SCs with a high energy density (22.6 W h kg -1 at 1 A g -1 ) and an excellent flexibility (>93% capacitance retention after 5000 bending cycles) can successfully be obtained.

Functional separation of oxidation–reduction reactions and electron transport in PtRu/ND and conductive additive hybrid electrocatalysts during methanol oxidation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yan; Wang, Yanhui [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Bian, Linyan [College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo, Henan 454000 (China); Lu, Rui [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Zang, Jianbing, E-mail: jbzang@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China)

2016-02-28

Graphical abstract: - Highlights: • Functional separation of reactions and electron transport in PtRu/ND + AB (or CNT). • A conductive network was formed after the addition of AB or CNT. • PtRu/ND + AB (or CNT) exhibited enhanced activity and stability than PtRu/ND. - Abstract: Undoped nanodiamond (ND) supported PtRu (PtRu/ND) electrocatalyst for methanol oxidation reactions (MOR) in direct methanol fuel cells was prepared by a microwave-assisted polyol reduction method. Sp{sup 3}-bonded ND possesses high electrochemical stability but low conductivity, while sp{sup 2}-bonded carbon nanomaterials with high conductivity are prone to oxidation. Therefore, the functions of the supporting material were separated in this study. ND (sp{sup 3}), as a support, and AB or CNTs (sp{sup 2}), as a conductive additive, were combined to form the hybrid electrocatalysts PtRu/ND + AB and PtRu/ND + CNT for MOR. The morphology of the electrocatalysts was characterized by scanning electron microscopy and electrochemical measurements were performed using an electrochemical workstation. The results indicated that the electrocatalytic activity of PtRu/ND for MOR was improved with the addition of AB or CNTs as a conductive additive. Moreover, adding CNTs to PtRu/ND as a conductive additive showed better electrocatalytic activities than adding AB, which can be ascribed to the better electron-transfer ability of CNTs.

Interpenetrating networks of two conducting polymers

DEFF Research Database (Denmark)

Winther-Jensen, Bjørn; West, Keld

2005-01-01

Interpenetrating networks (IPNs) of two conjugated polymers are prepared by a combination of a chemical oxidation step and a vapour phase polymerisation step on non-conducting surfaces. In this work ferric tosylate was used as the oxidant as it gives very smooth and homogeneous coatings, and beca......Interpenetrating networks (IPNs) of two conjugated polymers are prepared by a combination of a chemical oxidation step and a vapour phase polymerisation step on non-conducting surfaces. In this work ferric tosylate was used as the oxidant as it gives very smooth and homogeneous coatings......, and because its reaction products can be removed efficiently after the formation of the composite. Several combinations of polymers are demonstrated, and the versatility of the proposed method allows extensions to a wide range of conjugated polymers. The IPNs show optical and electrochemical characteristics......, which are sums of the characteristics from the participating conducting polymers....

An easily sintered, chemically stable, barium zirconate-based proton conductor for high-performance proton-conducting solid oxide fuel cells

KAUST Repository

Sun, Wenping

2014-07-25

Yttrium and indium co-doped barium zirconate is investigated to develop a chemically stable and sintering active proton conductor for solid oxide fuel cells (SOFCs). BaZr0.8Y0.2-xInxO3- δ possesses a pure cubic perovskite structure. The sintering activity of BaZr0.8Y0.2-xInxO3- δ increases significantly with In concentration. BaZr0.8Y0.15In0.05O3- δ (BZYI5) exhibits the highest total electrical conductivity among the sintered oxides. BZYI5 also retains high chemical stability against CO2, vapor, and reduction of H2. The good sintering activity, high conductivity, and chemical stability of BZYI5 facilitate the fabrication of durable SOFCs based on a highly conductive BZYI5 electrolyte film by cost-effective ceramic processes. Fully dense BZYI5 electrolyte film is successfully prepared on the anode substrate by a facile drop-coating technique followed by co-firing at 1400 °C for 5 h in air. The BZYI5 film exhibits one of the highest conductivity among the BaZrO3-based electrolyte films with various sintering aids. BZYI5-based single cells output very encouraging and by far the highest peak power density for BaZrO3-based proton-conducting SOFCs, reaching as high as 379 mW cm-2 at 700 °C. The results demonstrate that Y and In co-doping is an effective strategy for exploring sintering active and chemically stable BaZrO3-based proton conductors for high performance proton-conducting SOFCs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of Lithium-Stuffed Garnet-Type Oxide Solid Electrolytes with High Ionic Conductivity for Application to All-Solid-State Batteries

Energy Technology Data Exchange (ETDEWEB)

Inada, Ryoji, E-mail: inada@ee.tut.ac.jp; Yasuda, Satoshi; Tojo, Masaru; Tsuritani, Keiji; Tojo, Tomohiro; Sakurai, Yoji [Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi (Japan)

2016-07-20

All-solid-state lithium-ion batteries are expected to be one of the next generations of energy storage devices because of their high energy density, high safety, and excellent cycle stability. Although oxide-based solid electrolyte (SE) materials have rather lower conductivity and poor deformability than sulfide-based ones, they have other advantages, such as their chemical stability and ease of handling. Among the various oxide-based SEs, lithium-stuffed garnet-type oxide, with the formula of Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZ), has been widely studied because of its high conductivity above 10{sup −4} S cm{sup −1} at room temperature, excellent thermal performance, and stability against Li metal anode. Here, we present our recent progress for the development of garnet-type SEs with high conductivity by simultaneous substitution of Ta{sup 5+} into the Zr{sup 4+} site and Ba{sup 2+} into the La{sup 3+} site in LLZ. Li{sup +} concentration was fixed to 6.5 per chemical formulae, so that the formula of our Li garnet-type oxide is expressed as Li{sub 6.5}La{sub 3−x}Ba{sub x}Zr{sub 1.5−x}Ta{sub 0.5+x}O{sub 12} (LLBZT) and Ba contents x are changed from 0 to 0.3. As a result, all LLBZT samples have a cubic garnet structure without containing any secondary phases. The lattice parameters of LLBZT decrease with increasing Ba{sup 2+} contents x ≤ 0.10 while increase with x from 0.10 to 0.30, possibly due to the simultaneous change of Ba{sup 2+} and Ta{sup 5+} substitution levels. The relative densities of LLBZT are in a range between 89 and 93% and are not influenced in any significant way by the compositions. From the AC impedance spectroscopy measurements, the total (bulk + grain) conductivity at 27°C of LLBZT shows its maximum value of 8.34 × 10{sup −4} S cm{sup −1} at x = 0.10, which is slightly higher than the conductivity (= 7.94 × 10{sup −4} S cm{sup −1}) of LLZT without substituting Ba (x = 0). The activation energy of the conductivity

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

Directory of Open Access Journals (Sweden)

Jung-Sik Kim

2016-09-01

Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

International Nuclear Information System (INIS)

Keshmiri, S.H.; Roknabadi, M.R.

1999-01-01

Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

International Nuclear Information System (INIS)

Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

2016-01-01

Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

Effect of time and deposition method on quality of phosphonic acid modifier self-assembled monolayers on indium zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Sang, Lingzi [Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721 (United States); Knesting, Kristina M. [Department of Chemistry, University of Washington, Seattle, WA 98195-1700 (United States); Bulusu, Anuradha [School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Sigdel, Ajaya K. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Giordano, Anthony J.; Marder, Seth R. [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States); Berry, Joseph J. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Graham, Samuel [School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Ginger, David S. [Department of Chemistry, University of Washington, Seattle, WA 98195-1700 (United States); Pemberton, Jeanne E., E-mail: pembertn@email.arizona.edu [Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721 (United States)

2016-12-15

Highlights: • Deposition of phosphonic acid monolayers on oxides from ethanol solutions occurs by rapid adsorption within 10 s with slower equilibration complete in 48 h. • The slower equilibration step involves molecular reorientation and vacancy filling on the oxide surface. • Soak-free deposition by spray coating and microcontact printing do not provide reproducible, fully-covered, uniform monolayers without substrate etching. • Adjustments to exposure time, substrate temperature, and solution/substrate contact efficiency are necessary to optimize soak-free methods. - Abstract: Phosphonic acid (PA) self-assembled monolayers (SAMs) are utilized at critical interfaces between transparent conductive oxides (TCO) and organic active layers in organic photovoltaic devices (OPVs). The effects of PA deposition method and time on the formation of close-packed, high-quality monolayers is investigated here for SAMs fabricated by solution deposition, micro-contact printing, and spray coating. The solution deposition isotherm for pentafluorinated benzylphosphonic acid (F{sub 5}BnPA) on indium-doped zinc oxide (IZO) is studied using polarization modulation-infrared reflection-absorption spectroscopy (PM-IRRAS) at room temperature as a model PA/IZO system. Fast surface adsorption occurs within the first min; however, well-oriented high-quality SAMs are reached only after ∼48 h, presumably through a continual process of molecular adsorption/desorption and monolayer filling accompanied by molecular reorientation. Two other rapid, soak-free deposition techniques, micro-contact printing and spray coating, are also explored. SAM quality is compared for deposition of phenyl phosphonic acid (PPA), F{sub 13}-octylphosphonic acid (F{sub 13}OPA), and pentafluorinated benzyl phosphonic acid (F{sub 5}BnPA) by solution deposition, micro-contact printing and spray coating using PM-IRRAS. In contrast to micro-contact printing and spray coating techniques, 48–168 h solution

Electrochemical properties of mixed conducting (La,M)(CoFe) oxide perovskites (M=3DSr, Ca, and Ba)

Energy Technology Data Exchange (ETDEWEB)

Stevenson, J.W.; Armstrong, T.R.; Bates, J.L. [and others

1996-04-01

Electrical properties and oxygen permeation properties of solid mixed-conducting electrolytes (La,M)(CoFe) oxide perovskites (M=3DSr, Ca, and Ba) have been characterized. These materials are potentially useful as passive membranes to separate high purity oxygen from air and as the cathode in a fuel cell. Dilatometric linear expansion measurements were performed as a function of temperature and oxygen partial pressure to evaluate the stability.

Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

International Nuclear Information System (INIS)

Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

2011-01-01

A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

Science.gov (United States)

Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

2015-02-04

In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

Defect studies in copper-based p-type transparent conducting oxides

Science.gov (United States)

Ameena, Fnu

Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

Development of high-performance transparent conducting oxides and their impact on the performance of CdS/CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Coutts, T.J.; Wu, X.; Sheldon, P.; Rose, D.H. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

This paper begins with a review of the modeled performance of transparent conducting oxides (TCOs) as a function of their free-carrier concentration, mobility, and film thickness. It is shown that it is vital to make a film with high mobility to minimize the width and height of the free-carrier absorption band, and to optimize the optical properties. The free-carrier concentration must be kept sufficiently small that the absorption band does not extend into that part of the spectrum to which the solar cell responds. Despite this consideration, a high electrical conductivity is essential to minimize series resistance losses. Hence, a high mobility is vital for these materials. The fabrication of thin-films of cadmium stannate is then discussed, and their performance is compared with that of tin oxide, both optically and as these materials influence the performance of CdTe solar cells.

Numerical modelling of the impedance plane for simultaneous determining, by eddy currents, the oxide thickness and conductivity in Zircaloy

International Nuclear Information System (INIS)

Lois, Alejandro E.

2001-01-01

During service at high temperature or in aggressive media, metallic structures and components may suffer different types of changes or degradation. As an example, phase transformations may occur, second phases may precipitate, and in consequence the mechanical and chemical properties of the material may change. Their behavior will therefore differ from that considered for the design of the component. The knowledge of the amount of a precipitated second phase in a component should be an important tool in the hands of the maintenance engineer. And it would be very important to obtain this knowledge nondestructively and reliably. The objective of this project is to evaluate by eddy currents the amount of the hydrogen incorporated during service in structural zirconium base materials. For this purpose, a series of Zircaloy-4 specimens with oxide layers of different thickness and different concentration of hydrogen obtained by controlled autoclave treatments were used. These specimens were tested with eddy current equipment. The information produced by an eddy current test is the superposition of many variables, e.g.: thickness of oxide layers, conductance, thickness of specimen, etc. In order to sort out this information, an analytical model of the impedance plane was programmed in a PC, with which this information was processed, permitting, in this way, to evaluate the conductivity of materials, taking into account the effect of oxide layers thickness. A linear relationship between the conductivity and the hydrogen content in the range of hydrogen concentrations of technological interest was observed. Therefore, the calculated electrical conductivity may be transformed to the amount of hydrogen content, using a suitable calibration curve. This process will allow for the nondestructive assessment of the amount of hydrogen in reactor components, such as pressure and calandria tubes, a knowledge which will enable the experts to predict the degree of fragility of those

Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang Hui; Wan, Qing, E-mail: wanqing@nju.edu.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Qiang Zhu, Li, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Shi, Yi [School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-03-31

Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

International Nuclear Information System (INIS)

Canteli Perez-Caballero, D.

2015-01-01

Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

Nanocomposites of iridium oxide and conducting polymers as electroactive phases in biological media.

Science.gov (United States)

Moral-Vico, J; Sánchez-Redondo, S; Lichtenstein, M P; Suñol, C; Casañ-Pastor, N

2014-05-01

Much effort is currently devoted to implementing new materials in electrodes that will be used in the central nervous system, either for functional electrostimulation or for tests on nerve regeneration. Their main aim is to improve the charge capacity of the electrodes, while preventing damaging secondary reactions, such as peroxide formation, occurring while applying the electric field. Thus, hybrids may represent a new generation of materials. Two novel hybrid materials are synthesized using three known biocompatible materials tested in the neural system: polypyrrole (PPy), poly(3,4-ethylenedioxythiophene) (PEDOT) and iridium oxide (IrO2). In particular, PPy-IrO2 and PEDOT-IrO2 hybrid nanocomposite materials are prepared by chemical polymerization in hydrothermal conditions, using IrO2 as oxidizing agent. The reaction yields a significant ordered new hybrid where the conducting polymer is formed around the IrO2 nanoparticles, encapsulating them. Scanning electron microscopy and backscattering techniques show the extent of the encapsulation. Both X-ray photoelectron and Fourier transform infrared spectroscopies identify the components of the phases, as well as the absence of impurities. Electrochemical properties of the final phases in powder and pellet form are evaluated by cyclic voltammetry. Biocompatibility is tested with MTT toxicity tests using primary cultures of cortical neurons grown in vitro for 6 and 9days. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Low-cost ZnO:Al transparent contact by reactive rotatable magnetron sputtering for Cu(In,Ga)Se2 solar modules

International Nuclear Information System (INIS)

Menner, R.; Hariskos, D.; Linss, V.; Powalla, M.

2011-01-01

Sputtering ZnO as transparent front contact (TCO) is standard in today's industrial scale Cu(In,Ga)Se 2 (CIGS) module manufacturing. Although innovative concepts like rotatable magnetron sputtering from ceramic targets have been realised, costs are still high due to expensive ceramic targets. Significant cost reductions are expected by using reactive sputtering of metallic targets. Therefore, ZSW and industrial partners investigated the reactive sputtering of Al-doped zinc oxide (ZAO) as TCO on CIGS absorbers of high quality and industrial relevance. The reactive DC sputtering from rotatable magnetron targets is controlled in the transition mode by adjusting oxygen flow and discharge voltage. Optimisation leads to ZAO films with a TCO quality nearly comparable to standard films deposited by DC ceramic sputtering. Scanning electron microscopy, X-ray diffraction, and Hall analyses of the ZAO films are performed. Medium-size CIGS modules are coated with reactively sputtered ZAO, resulting in 12.8% module efficiency and surpassing the efficiency of the ceramic witness device. Cd-free buffered devices are also successfully coated with reactive TCO. Damp heat stability according to IEC61646 is met by all reactively sputtered devices.

Technetium behavior in sulfide and ferrous iron solutions

International Nuclear Information System (INIS)

Lee, S.Y.; Bondietti, E.A.

1982-01-01

Pertechnetate oxyanion ( 99 TcO 4- ), a potentially mobile species in leachate from a breached radioactive waste repository, was removed from a brine solution by precipitation with sulfide, iron, and ferrous sulfide at environmental pH's. Maghemite (ν-Fe 2 O 3 ) and geothite (α-FeOOH) were the dominant minerals in the precipitate obtained from the TcO 4- -ferrous iron reaction. The observation of small particle size and poor crystallinity of the minerals formed in the presence of Tc suggested that the Tc was incorporated into the mineral structure after reduction to a lower valence state. Amorphous ferrous sulfide, an initial phase precipitating in the TcO 4- -ferrous iron-sulfide reaction, was transformed to goethite and hematite (α-Fe 2 O 3 ) on aging. The black precipitate obtained from the TcO 4- -sulfide reaction was poorly crystallized technetium sulfide (Tc 2 S 7 ) which was insoluble in both acid and alkaline solution in the absence of strong oxidents. The results suggested that ferrous- and/or sulfide-bearing groundwaters and minerals in host rocks or backfill barriers could reduce the mobility of Tc through the formation of less-soluble Tc-bearing iron and/or sulfide minerals

Preparation of TNAs/NiO p-n heterojunction and their applications in UV photosensor

Science.gov (United States)

Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

2018-05-01

A nanocomposite consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 µW/cm2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation

Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

Directory of Open Access Journals (Sweden)

Shao-Kai Lu

2014-03-01

Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

Enhanced catalytic and dopamine sensing properties of electrochemically reduced conducting polymer nanocomposite doped with pure graphene oxide.

Science.gov (United States)

Wang, Wenting; Xu, Guiyun; Cui, Xinyan Tracy; Sheng, Ge; Luo, Xiliang

2014-08-15

Significantly enhanced catalytic activity of a nanocomposite composed of conducting polymer poly (3,4-ethylenedioxythiophene) (PEDOT) doped with graphene oxide (GO) was achieved through a simple electrochemical reduction process. The nanocomposite (PEDOT/GO) was electrodeposited on an electrode and followed by electrochemical reduction, and the obtained reduced nanocomposite (PEDOT/RGO) modified electrode exhibited lowered electrochemical impedance and excellent electrocatalytic activity towards the oxidation of dopamine. Based on the excellent catalytic property of PEDOT/RGO, an electrochemical sensor capable of sensitive and selective detection of DA was developed. The fabricated sensor can detect DA in a wide linear range from 0.1 to 175μM, with a detection limit of 39nM, and it is free from common interferences such as uric acid and ascorbic acid. Copyright © 2014 Elsevier B.V. All rights reserved.

The Optical and Electrical Properties of ZnO/Ag/ZnO Films on Flexible Substrate

Science.gov (United States)

Yu, Xiaojing; Zhang, Dongyan; Wang, Pangpang; Murakami, Ri-Ichi; Ding, Bingjun; Song, Xiaoping

The deposition of ZnO/Ag/ZnO film on polyethylene terephthalate (PET) substrate was fabricated by DC magnetron sputtering method. The thicknesses of ZnO layers were 30 nm and Ag films' thicknesses were changed from 1 nm to 6 nm by controlled the sputtering time. This kind of film can be used as transparent conductive oxide (TCO) materials. The electrical and optical properties of composite layers were determined by Ag films. The optimum sputtering time of Ag thin films was found to be 20 s for the high optical transmittance with good electrical conductivity. The ZnO/Ag(20 s)/ZnO layer, which has high optical transmittance of 73% at 550 nm, shows sheet resistance as low as 6.7 ohm/sq. These multilayer transparent films had low electrical resistance as the widely used transparent conductive oxide electrodes. SEM, XRD, the UV-Vis-NIR and Hall Effect measurement system were used to characterize properties of fabricated films. The reasons for the change of transmittance and resistance will also be interpreted.

Electrical conductivity of metal powders under pressure

Science.gov (United States)

Montes, J. M.; Cuevas, F. G.; Cintas, J.; Urban, P.

2011-12-01

A model for calculating the electrical conductivity of a compressed powder mass consisting of oxide-coated metal particles has been derived. A theoretical tool previously developed by the authors, the so-called `equivalent simple cubic system', was used in the model deduction. This tool is based on relating the actual powder system to an equivalent one consisting of deforming spheres packed in a simple cubic lattice, which is much easier to examine. The proposed model relates the effective electrical conductivity of the powder mass under compression to its level of porosity. Other physically measurable parameters in the model are the conductivities of the metal and oxide constituting the powder particles, their radii, the mean thickness of the oxide layer and the tap porosity of the powder. Two additional parameters controlling the effect of the descaling of the particle oxide layer were empirically introduced. The proposed model was experimentally verified by measurements of the electrical conductivity of aluminium, bronze, iron, nickel and titanium powders under pressure. The consistency between theoretical predictions and experimental results was reasonably good in all cases.

Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

2008-07-01

P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mixed conductivity in erbia-stabilized bismuth oxide

NARCIS (Netherlands)

Vinke, I.C.; Vinke, I.C.; Boukamp, Bernard A.; de Vries, K.J.; de Vries, Karel Jan; Burggraaf, Anthonie; Burggraaf, A.J.

1992-01-01

The mixed conducting solid solution 0.75Bi2O3−0.25Tb4O7 (BT40) was studied by impedance techniques using ionically blocking electrodes. These measurements confirmed the p-type electronic conductivity suggested in literature. In air at temperatures between 600 and 900 K the ionic transference number

Multielectronic conduction in La1-xSrxGa1/2Mn1/2O3-δ as solid oxide fuel cell cathode

Science.gov (United States)

Iguchi, E.; Hashimoto, Y.; Kurumada, M.; Munakata, F.

2003-08-01

Four-probe dc conductivities, capacitances, and thermopower have been measured in the temperature range of 80-1123 K for La1-xSrxGa1/2Mn1/2O3-δ, which is a desirable cathode material for lanthanum-gallate electrolytes of solid oxide fuel cells. The dc conductivities in the specimens (0.1⩽x⩽0.3) are insensitive to x but the thermopower is very sensitive to x, although the x=0 specimen exhibits a somewhat different conduction behavior. At T500 K, the band conduction dominates the electronic transports. The ionic conduction due to O2- migration seems difficult to contribute directly to the dc conduction even at high temperature.

Development of composite ceramic materials with improved thermal conductivity and plasticity based on garnet-type oxides