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Sample records for conduction band edge

  1. Conduction band edge effective mass of La-doped BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-06-20

    BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  2. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

    International Nuclear Information System (INIS)

    Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

    2005-01-01

    X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

  3. Calculations of Energy Shift of the Conduction Band-Edge in Doped and Compensated GaP

    OpenAIRE

    Endo, Tamio; Itoh, Nobuhiko; Okino, Yasushi; 遠藤, 民生; 伊藤, 伸彦; 沖野, 祥[他

    1989-01-01

    The energy shifts of the parabolic conduction band-edge at 77 and 300K with doping the Te-donor in GaP were calculated in the nondegenerate system for the two cases ; unintentional and intentional compensations, using the two models proposed by Hwang abd by Mahan. The total parabolic shift △EM(△EH), and the contributions of the exchangeinteraction △μex(△Ee) and of the Coulomb interaction △μed(△Ec) calculated by the Mahan's model (Hwang's model), increase with increasing donor concentration in...

  4. Degenerate band edge laser

    Science.gov (United States)

    Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

    2018-05-01

    We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

  5. Lithium-modulated conduction band edge shifts and charge-transfer dynamics in dye-sensitized solar cells based on a dicyanamide ionic liquid.

    Science.gov (United States)

    Bai, Yu; Zhang, Jing; Wang, Yinghui; Zhang, Min; Wang, Peng

    2011-04-19

    Lithium ions are known for their potent function in modulating the energy alignment at the oxide semiconductor/dye/electrolyte interface in dye-sensitized solar cells (DSCs), offering the opportunity to control the associated multichannel charge-transfer dynamics. Herein, by optimizing the lithium iodide content in 1-ethyl-3-methylimidazolium dicyanamide-based ionic liquid electrolytes, we present a solvent-free DSC displaying an impressive 8.4% efficiency at 100 mW cm(-2) AM1.5G conditions. We further scrutinize the origins of evident impacts of lithium ions upon current density-voltage characteristics as well as photocurrent action spectra of DSCs based thereon. It is found that, along with a gradual increase of the lithium content in ionic liquid electrolytes, a consecutive diminishment of the open-circuit photovoltage arises, primarily owing to a noticeable downward movement of the titania conduction band edge. The conduction band edge displacement away from vacuum also assists the formation of a more favorable energy offset at the titania/dye interface, and thereby leads to a faster electron injection rate and a higher exciton dissociation yield as implied by transient emission measurements. We also notice that the adverse influence of the titania conduction band edge downward shift arising from lithium addition upon photovoltage is partly compensated by a concomitant suppression of the triiodide involving interfacial charge recombination. © 2011 American Chemical Society

  6. Adjustment of Conduction Band Edge of Compact TiO2 Layer in Perovskite Solar Cells Through TiCl4 Treatment.

    Science.gov (United States)

    Murakami, Takurou N; Miyadera, Tetsuhiko; Funaki, Takashi; Cojocaru, Ludmila; Kazaoui, Said; Chikamatsu, Masayuki; Segawa, Hiroshi

    2017-10-25

    Perovskite solar cells (PSCs) without a mesoporous TiO 2 layer, that is, planar-type PSCs exhibit poorer cell performance as compared to PSCs with a porous TiO 2 layer, owing to inefficient electron transfer from the perovskite layer to the compact TiO 2 layer in the former case. The matching of the conduction band levels of perovskite and the compact TiO 2 layer is thus essential for enhancing PSC performance. In this study, we demonstrate the shifting of the conduction band edge (CBE) of the compact TiO 2 layer through a TiCl 4 treatment, with the aim of improving PSC performance. The CBE of the compact TiO 2 layer was shifted to a higher level through the TiCl 4 treatment and then shifted in the opposite direction, that is, to a lower level, through a subsequent heat treatment. These shifts in the CBE were reflected in the PSC performance. The TiCl 4 -treated PSC showed an increase in the open-circuit voltage of more than 150 mV, as well as a decrease of 100 mV after being heated at 450 °C. On the other hand, the short-circuit current decreased after the treatment but increased after heating at temperatures higher than 300 °C. The treated PSC subjected to subsequent heating at 300 °C exhibited the best performance, with the power conversion efficiency of the PSC being 17% under optimized conditions.

  7. Effects of adsorbed pyridine derivatives and ultrathin atomic-layer-deposited alumina coatings on the conduction band-edge energy of TiO2 and on redox-shuttle-derived dark currents.

    Science.gov (United States)

    Katz, Michael J; Vermeer, Michael J D; Farha, Omar K; Pellin, Michael J; Hupp, Joseph T

    2013-01-15

    Both the adsorption of t-butylpyridine and the atomic-layer deposition of ultrathin conformal coatings of insulators (such as alumina) are known to boost open-circuit photovoltages substantially for dye-sensitized solar cells. One attractive interpretation is that these modifiers significantly shift the conduction-edge energy of the electrode, thereby shifting the onset potential for dark current arising from the interception of injected electrons by solution-phase redox shuttle components such as Co(phenanthroline)(3)(3+) and triiodide. For standard, high-area, nanoporous photoelectrodes, band-edge energies are difficult to measure directly. In contrast, for flat electrodes they are readily accessible from Mott-Schottky analyses of impedance data. Using such electrodes (specifically TiO(2)), we find that neither organic nor inorganic electrode-surface modifiers shift the conduction-band-edge energy sufficiently to account fully for the beneficial effects on electrode behavior (i.e., the suppression of dark current). Additional experiments reveal that the efficacy of ultrathin coatings of Al(2)O(3) arises chiefly from the passivation of redox-catalytic surface states. In contrast, adsorbed t-butylpyridine appears to suppress dark currents mainly by physically blocking access of shuttle molecules to the electrode surface. Studies with other derivatives of pyridine, including sterically and/or electronically diverse derivatives, show that heterocycle adsorption and the concomitant suppression of dark current does not require the coordination of surface Ti(IV) or Al(III) atoms. Notably, the favorable (i.e., negative) shifts in onset potential for the flow of dark current engendered by organic and inorganic surface modifiers are additive. Furthermore, they appear to be largely insensitive to the identity of shuttle molecules.

  8. Optically Unraveling the Edge Chirality-Dependent Band Structure and Plasmon Damping in Graphene Edges.

    Science.gov (United States)

    Duan, Jiahua; Chen, Runkun; Cheng, Yuan; Yang, Tianzhong; Zhai, Feng; Dai, Qing; Chen, Jianing

    2018-05-01

    The nontrivial topological origin and pseudospinorial character of electron wavefunctions make edge states possess unusual electronic properties. Twenty years ago, the tight-binding model calculation predicted that zigzag termination of 2D sheets of carbon atoms have peculiar edge states, which show potential application in spintronics and modern information technologies. Although scanning probe microscopy is employed to capture this phenomenon, the experimental demonstration of its optical response remains challenging. Here, the propagating graphene plasmon provides an edge-selective polaritonic probe to directly detect and control the electronic edge state at ambient condition. Compared with armchair, the edge-band structure in the bandgap gives rise to additional optical absorption and strongly absorbed rim at zigzag edge. Furthermore, the optical conductivity is reconstructed and the anisotropic plasmon damping in graphene systems is revealed. The reported approach paves the way for detecting edge-specific phenomena in other van der Waals materials and topological insulators. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Validity of the concept of band edge in organic semiconductors

    Science.gov (United States)

    Horowitz, Gilles

    2015-09-01

    Because most organic semiconductors are disordered, the more appropriate function to describe their density of states (DOS) is the Gaussian distribution. A striking difference between the Gaussian DOS and the parabolic DOS found in conventional inorganic semiconductors is the fact that it does not allow for a simple and straightforward definition of the band edge. The most usual way found in the literature to define the band edge of a Gaussian DOS consists of extrapolating the tangent to the inflection point of the Gaussian curve. The aim of this paper is to discuss the validity of such a way of conduct. An analysis of data found in the literature shows that the width of the Gaussian distribution is significantly larger than what usually retained in transport models. It is also shown that the validity of the usual definition for the band edge is questioned by the fact that the density of charge carriers behave as a degenerate distribution, even at relatively low doping levels.

  10. New Kronig-Penney Equation Emphasizing the Band Edge Conditions

    Science.gov (United States)

    Szmulowicz, Frank

    2008-01-01

    The Kronig-Penney problem is a textbook example for discussing band dispersions and band gap formation in periodic layered media. For example, in photonic crystals, the behaviour of bands next to the band edges is important for further discussions of such effects as inhibited light emission, slow light and negative index of refraction. However,…

  11. New Kronig-Penney equation emphasizing the band edge conditions

    International Nuclear Information System (INIS)

    Szmulowicz, Frank

    2008-01-01

    The Kronig-Penney problem is a textbook example for discussing band dispersions and band gap formation in periodic layered media. For example, in photonic crystals, the behaviour of bands next to the band edges is important for further discussions of such effects as inhibited light emission, slow light and negative index of refraction. However, the standard Kronig-Penney equation does not explicitly state the band edge conditions. This paper derives a new solution for the Kronig-Penney problem that explicitly displays the band edge conditions as well as contains all other essential physics of band formation. Therefore, the present exposition should show the student that the band edge conditions are not simply special cases of the familiar Kronig-Penney equation but, instead, are an integral part of the band theory. For the computationally minded student, the new equation is particularly convenient for calculating the positions of closely spaced band edges. The present results can be taught alongside the Kronig-Penney equation in advanced undergraduate or beginning graduate quantum mechanics, solid state theory and photonics courses dealing with wave propagation through periodic layered media

  12. Effect of conduction band nonparabolicity on the optical properties in ...

    Indian Academy of Sciences (India)

    the bulk conduction band edge, the correction due to nonparabolicity can be important. [9,10]. In a narrow QW under a strong magnetic field, the optical absorption coefficients calculated with the nonparabolicity correction shows remarkable deviation from results obtained using parabolic energy approximation [11].

  13. Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals.

    Science.gov (United States)

    Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Qu, Junling; Ithurria, Sandrine; Silly, Mathieu G; Dubertret, Benoit; Lhuillier, Emmanuel

    2018-04-11

    Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

  14. Edge-Induced Shear Banding in Entangled Polymeric Fluids.

    Science.gov (United States)

    Hemingway, Ewan J; Fielding, Suzanne M

    2018-03-30

    Despite decades of research, the question of whether solutions and melts of highly entangled polymers exhibit shear banding as their steady state response to a steadily imposed shear flow remains controversial. From a theoretical viewpoint, an important unanswered question is whether the underlying constitutive curve of shear stress σ as a function of shear rate γ[over ˙] (for states of homogeneous shear) is monotonic, or has a region of negative slope, dσ/dγ[over ˙]<0, which would trigger banding. Attempts to settle the question experimentally via velocimetry of the flow field inside the fluid are often confounded by an instability of the free surface where the sample meets the outside air, known as "edge fracture." Here we show by numerical simulation that in fact even only very modest edge disturbances-which are the precursor of full edge fracture but might well, in themselves, go unnoticed experimentally-can cause strong secondary flows in the form of shear bands that invade deep into the fluid bulk. Crucially, this is true even when the underlying constitutive curve is monotonically increasing, precluding true bulk shear banding in the absence of edge effects.

  15. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  16. Quantitative results near the band edges of disordered systems

    International Nuclear Information System (INIS)

    Economou, E.N.; Soukoulis, C.M.; Cohen, M.H.; Zdetsis, A.D.

    1985-01-01

    By combining the coherent-potential approximation, the potential-well analogy, and theories for the near tail in the density of states, we obtain, for the first time, explicitly quantitative results for the various quantities of interest near the band edges of disordered systems. These results exhibit a certain universality and can be expressed in terms of simple analytic functions, provided that disorder is not larger than about (1/5) of the bandwidth

  17. New edge-centered photonic square lattices with flat bands

    Science.gov (United States)

    Zhang, Da; Zhang, Yiqi; Zhong, Hua; Li, Changbiao; Zhang, Zhaoyang; Zhang, Yanpeng; Belić, Milivoj R.

    2017-07-01

    We report a new class of edge-centered photonic square lattices with multiple flat bands, and consider in detail two examples: the Lieb-5 and Lieb-7 lattices. In these lattices, there are 5 and 7 sites in the unit cell and in general, the number is restricted to odd integers. The number of flat bands m in the new Lieb lattices is related to the number of sites N in the unit cell by a simple formula m =(N - 1) / 2. The flat bands reported here are independent of the pseudomagnetic field. The properties of lattices with even and odd number of flat bands are different. We consider the localization of light in such Lieb lattices. If the input beam excites the flat-band mode, it will not diffract during propagation, owing to the strong mode localization. In the Lieb-7 lattice, the beam will also oscillate during propagation and still not diffract. The period of oscillation is determined by the energy difference between the two flat bands. This study provides a new platform for investigating light trapping, photonic topological insulators, and pseudospin-mediated vortex generation.

  18. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

    Science.gov (United States)

    Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

    2014-05-14

    Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

  19. Optofluidic tuning of photonic crystal band edge lasers

    DEFF Research Database (Denmark)

    Bernal, Felipe; Christiansen, Mads Brøkner; Gersborg-Hansen, Morten

    2007-01-01

    We demonstrate optofluidic tuning of polymer photonic crystal band edge lasers with an imposed rectangular symmetry. The emission wavelength depends on both lattice constant and cladding refractive index. The emission wavelength is shown to change 1 nm with a cladding refractive index change of 10......−2. The rectangular symmetry modification alters the emission characteristics of the devices and the relative emission intensities along the symmetry axes depend on cladding refractive index, suggesting a sensor concept based on detection of intensity rather than wavelength....

  20. Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

    Directory of Open Access Journals (Sweden)

    E. Kalesaki

    2014-01-01

    Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

  1. Coherent control of spontaneous emission near a photonic band edge

    International Nuclear Information System (INIS)

    Woldeyohannes, Mesfin; John, Sajeev

    2003-01-01

    We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band gap (PBG) material, with one resonant frequency near the edge of the PBG. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This non-zero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive optical memory device on the atomic scale. The protected electric dipole within the PBG provides a basis for a qubit to encode information for quantum computations. A detailed literature survey on the nature, fabrication and applications of PBG materials is presented to provide context for this research. (phd tutorial)

  2. Edge magnetism impact on electrical conductance and thermoelectric properties of graphenelike nanoribbons

    Science.gov (United States)

    Krompiewski, Stefan; Cuniberti, Gianaurelio

    2017-10-01

    Edge states in narrow quasi-two-dimensional nanostructures determine, to a large extent, their electric, thermoelectric, and magnetic properties. Nonmagnetic edge states may quite often lead to topological-insulator-type behavior. However, another scenario develops when the zigzag edges are magnetic and the time reversal symmetry is broken. In this work we report on the electronic band structure modifications, electrical conductance, and thermoelectric properties of narrow zigzag nanoribbons with spontaneously magnetized edges. Theoretical studies based on the Kane-Mele-Hubbard tight-binding model show that for silicene, germanene, and stanene both the Seebeck coefficient and the thermoelectric power factor are strongly enhanced for energies close to the charge neutrality point. A perpendicular gate voltage lifts the spin degeneracy of energy bands in the ground state with antiparallel magnetized zigzag edges and makes the electrical conductance significantly spin polarized. Simultaneously the gate voltage worsens the thermoelectric performance. Estimated room-temperature figures of merit for the aforementioned nanoribbons can exceed a value of 3 if phonon thermal conductances are adequately reduced.

  3. Experimental determination of conduction and valence bands of semiconductor nanoparticles using Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Zhang Wen; Chen Yongsheng

    2013-01-01

    The ability to determine a semiconductor’s band edge positions is important for the design of new photocatalyst materials. In this paper, we introduced an experimental method based on Kelvin probe force microscopy to determine the conduction and valence band edge energies of semiconductor nanomaterials, which has rarely been demonstrated. We tested the method on six semiconductor nanoparticles (α-Fe 2 O 3 , CeO 2 , Al 2 O 3 , CuO, TiO 2 , and ZnO) with known electronic structures. The experimentally determined band edge positions for α-Fe 2 O 3 , Al 2 O 3 , and CuO well matched the literature values with no statistical difference. Except CeO 2 , all other metal oxides had a consistent upward bias in the experimental measurements of band edge positions because of the shielding effect of the adsorbed surface water layer. This experimental approach may outstand as a unique alternative way of probing the band edge energy positions of semiconductor materials to complement the current computational methods, which often find limitations in new synthetic or complex materials. Ultimately, this work provides scientific foundation for developing experimental tools to probe nanoscale electronic properties of photocatalytic materials, which will drive breakthroughs in the design of novel photocatalytic systems and advance the fundamental understanding of material properties.

  4. Optical band-edge absorption of oxide compound SnO2

    International Nuclear Information System (INIS)

    Roman, L.S.; Valaski, R.; Canestraro, C.D.; Magalhaes, E.C.S.; Persson, C.; Ahuja, R.; Silva, E.F. da; Pepe, I.; Silva, A. Ferreira da

    2006-01-01

    Tin oxide (SnO 2 ) is an important oxide for efficient dielectrics, catalysis, sensor devices, electrodes and transparent conducting coating oxide technologies. SnO 2 thin film is widely used in glass applications due to its low infra-red heat emissivity. In this work, the SnO 2 electronic band-edge structure and optical properties are studied employing a first-principle and fully relativistic full-potential linearized augmented plane wave (FPLAPW) method within the local density approximation (LDA). The optical band-edge absorption α(ω) of intrinsic SnO 2 is investigated experimentally by transmission spectroscopy measurements and their roughness in the light of the atomic force microscopy (AFM) measurements. The sample films were prepared by spray pyrolysis deposition method onto glass substrate considering different thickness layers. We found for SnO 2 qualitatively good agreement of the calculated optical band-gap energy as well as the optical absorption with the experimental results

  5. Energies of conduction bands in dielectric liquids

    International Nuclear Information System (INIS)

    Holroyd, R.

    1975-01-01

    The properties of excess electrons in non-polar liquids depend on the relative energies of the trapped and conducting states. We have measured the energies of the conducting states, denoted V 0 , for about twenty non-polar liquids. Two methods were used: In one the work functions of metals immersed in the liquid were measured. In the other, solutes (TMPD) were photoionized in the liquid and V 0 calculated from the wavelength at which ionization onsets occur. A wide variation in conduction state energies is observed from a high of +0.21 eV for tetradecane to a low of --0.60 eV for tetramethylsilane. In general V 0 shifts to more negative values with increasing molecular symmetry, and correlates well with electron mobility. The photoionization results indicate that V 0 decreases with increasing temperature. In mixtures V 0 is linearly dependent on mole fraction. It was found empirically for n-hexane-neopentane mixtures that μ = 0.34 exp [--15.2(V 0 )]. This equation relating V 0 to the electron mobility also applies approximately to pure hydrocarbons. Thus the role of the conduction state energy in influencing electron mobilities and photoionization onsets is established and recent evidence indicates V 0 also influences the rates of electron reactions in these liquids

  6. Tuning the band structure of graphene nanoribbons through defect-interaction-driven edge patterning

    Science.gov (United States)

    Du, Lin; Nguyen, Tam N.; Gilman, Ari; Muniz, André R.; Maroudas, Dimitrios

    2017-12-01

    We report a systematic analysis of pore-edge interactions in graphene nanoribbons (GNRs) and their outcomes based on first-principles calculations and classical molecular-dynamics simulations. We find a strong attractive interaction between nanopores and GNR edges that drives the pores to migrate toward and coalesce with the GNR edges, which can be exploited to form GNR edge patterns that impact the GNR electronic band structure and tune the GNR band gap. Our analysis introduces a viable physical processing strategy for modifying GNR properties by combining defect engineering and thermal annealing.

  7. The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.

    2007-01-01

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations

  8. Phonon thermal conductance of disordered graphene strips with armchair edges

    International Nuclear Information System (INIS)

    Shi Lipeng; Xiong Shijie

    2009-01-01

    Based on the model of lattice dynamics together with the transfer matrix technique, we investigate the thermal conductances of phonons in quasi-one-dimensional disordered graphene strips with armchair edges using Landauer formalism for thermal transport. It is found that the contributions to thermal conductance from the phonon transport near von Hove singularities is significantly suppressed by the presence of disorder, on the contrary to the effect of disorder on phonon modes in other frequency regions. Besides the magnitude, for different widths of the strips, the thermal conductance also shows different temperature dependence. At low temperatures, the thermal conductance displays quantized features of both pure and disordered graphene strips implying that the transmission of phonon modes at low frequencies are almost unaffected by the disorder

  9. Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

    Science.gov (United States)

    2016-01-26

    AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

  10. Self-consistent study of localization near band edges

    International Nuclear Information System (INIS)

    Brezini, A.

    1982-02-01

    The localization criterion of Kumar et al. is applied to the case of a uniform distribution for the site energies and particular attention is given to the behaviour of the mobility edge in the limit of weak disorder. The results are similar to other theories but disagree with that of Abou-Chacra and Thouless in the limit of zero disorder. (author)

  11. Conduction bands and invariant energy gaps in alkali bromides

    NARCIS (Netherlands)

    Boer, P.K. de; Groot, R.A. de

    1998-01-01

    Electronic structure calculations of the alkali bromides LiBr, NaBr, KBr, RbBr and CsBr are reported. It is shown that the conduction band has primarily bromine character. The size of the band gaps of bromides and alkali halides in general is reinterpreted.

  12. Red photoluminescence and band edge shift from ZnO thin films

    International Nuclear Information System (INIS)

    Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

    2007-01-01

    The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

  13. Anomalies in the 1D Anderson model: Beyond the band-centre and band-edge cases

    Science.gov (United States)

    Tessieri, L.; Izrailev, F. M.

    2018-03-01

    We consider the one-dimensional Anderson model with weak disorder. Using the Hamiltonian map approach, we analyse the validity of the random-phase approximation for resonant values of the energy, E = 2 cos(πr) , with r a rational number. We expand the invariant measure of the phase variable in powers of the disorder strength and we show that, contrary to what happens at the centre and at the edges of the band, for all other resonant energies the leading term of the invariant measure is uniform. When higher-order terms are taken into account, a modulation of the invariant measure appears for all resonant values of the energy. This implies that, when the localisation length is computed within the second-order approximation in the disorder strength, the Thouless formula is valid everywhere except at the band centre and at the band edges.

  14. Band-edge photoluminescence in CdTe

    International Nuclear Information System (INIS)

    Horodysky, P.; Grill, R.; Hlidek, P.

    2006-01-01

    Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

    Science.gov (United States)

    Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

    2013-08-26

    We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

  16. Enhancement of Faraday rotation at photonic-band-gap edge in garnet-based magnetophotonic crystals

    International Nuclear Information System (INIS)

    Zhdanov, A.G.; Fedyanin, A.A.; Aktsipetrov, O.A.; Kobayashi, D.; Uchida, H.; Inoue, M.

    2006-01-01

    Spectral dependences of Faraday rotation angle in one-dimensional garnet-based magnetophotonic crystals are considered. The enhancement of Faraday angle is demonstrated at the photonic band gap (PBG) edge both theoretically and experimentally. It is shown to be associated with the optical field localization in the magnetic layers of the structure. The advantages of magnetophotonic crystals in comparison with traditional magnetic microcavities are discussed. The specially designed microcavity structures optimized for the Faraday effect enhancement at the PBG edge are suggested

  17. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    Czech Academy of Sciences Publication Activity Database

    Yadav, S.K.; Uberuaga, B.P.; Nikl, Martin; Jiang, C.; Stanek, C.R.

    2015-01-01

    Roč. 4, č. 5 (2015), "054012-1"-"054012-9" ISSN 2331-7019 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * electronic band gap structure * garnets * band gap engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.061, year: 2015

  18. Determination of shift in energy of band edges and band gap of ZnSe spherical quantum dot

    Science.gov (United States)

    Siboh, Dutem; Kalita, Pradip Kumar; Sarma, Jayanta Kumar; Nath, Nayan Mani

    2018-04-01

    We have determined the quantum confinement induced shifts in energy of band edges and band gap with respect to size of ZnSe spherical quantum dot employing an effective confinement potential model developed in our earlier communication "arXiv:1705.10343". We have also performed phenomenological analysis of our theoretical results in comparison with available experimental data and observe a very good agreement in this regard. Phenomenological success achieved in this regard confirms validity of the confining potential model as well as signifies the capability and applicability of the ansatz for the effective confining potential to have reasonable information in the study of real nano-structured spherical systems.

  19. Antarctic krill under sea ice: elevated abundance in a narrow band just south of ice edge.

    Science.gov (United States)

    Brierley, Andrew S; Fernandes, Paul G; Brandon, Mark A; Armstrong, Frederick; Millard, Nicholas W; McPhail, Steven D; Stevenson, Peter; Pebody, Miles; Perrett, James; Squires, Mark; Bone, Douglas G; Griffiths, Gwyn

    2002-03-08

    We surveyed Antarctic krill (Euphausia superba) under sea ice using the autonomous underwater vehicle Autosub-2. Krill were concentrated within a band under ice between 1 and 13 kilometers south of the ice edge. Within this band, krill densities were fivefold greater than that of open water. The under-ice environment has long been considered an important habitat for krill, but sampling difficulties have previously prevented direct observations under ice over the scale necessary for robust krill density estimation. Autosub-2 enabled us to make continuous high-resolution measurements of krill density under ice reaching 27 kilometers beyond the ice edge.

  20. Low Thermal Conductance Transition Edge Sensor (TES) for SPICA

    International Nuclear Information System (INIS)

    Khosropanah, P.; Dirks, B.; Kuur, J. van der; Ridder, M.; Bruijn, M.; Popescu, M.; Hoevers, H.; Gao, J. R.; Morozov, D.; Mauskopf, P.

    2009-01-01

    We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10 -19 W/√(Hz). The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10 -18 W/√(Hz), which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we find an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.

  1. Inter-band and intra-band reflections in graphene–insulator–superconductor junctions with zigzag or armchair edge

    Energy Technology Data Exchange (ETDEWEB)

    Duque, M.F., E-mail: mfduqued@unal.edu.co; Gomez P, S., E-mail: sgomezp@unal.edu.co; Herrera, W.J., E-mail: jherreraw@unal.edu.co

    2014-12-15

    We analyze electron–electron and Andreev reflections (AR) for a graphene–insulator–superconductor junction for zigzag and armchair edges, where the insulator is modeled as a potential barrier characterized by a strength. We calculate the reflection probabilities and differential conductance using the Bogoliubov–de Gennes–Dirac (BdGD) equations. For low doping values and zigzag edge the reflection coefficients have the same behavior that in a graphene–superconductor junction. However for high doping values the reflection probabilities have a periodicity of πwith the strength barrier values. For high doping values and armchair edge the electron–electron reflections associated to K′ valley increase and AR associated to K valley decrease. We compare our results with the differential conductance obtained by the Green formalism. We show that the effect of barrier strength for high doping resembles the behavior when a hopping between graphene and superconductor interfaces is considered.

  2. Investigation into short-range order, electric conductivity and optical absorption edge of indium selenide thin amorphous films

    International Nuclear Information System (INIS)

    Bilyj, M.N.; Didyk, G.V.; Stetsiv, Ya.I.; Yurechko, R.Ya.

    1980-01-01

    Thin amorphous films of InSe have been obtained by the method of discrete vacuum evaporation of about 10 -2 Pa. The short-range order is investigated according to the radial distribution curves. The temperature and film thickness are shown to affect the character of conductivity. The width of the forbidden band determined by the fundamental absorption edge is found to depend on the time of film annealing

  3. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  4. Lifshitz singularities in random harmonic chains: periodic amplitudes near the band edge and near special frequencies

    International Nuclear Information System (INIS)

    Nieuwenhuizen, T.M.; Luck, J.M.

    1987-01-01

    The authors give a complete description of the scaling behavior of the integrated density of states of random harmonic chains with random masses near the band edge omega/sub max/ and near special frequencies omega/sub s/. There are four different situations: omega upward arrow omega/sub max/, omega upward arrow omega/sub s/, omega upward arrow omega/sub s/ (critical case), omega upward arrow omega/sub s/ (general case). Their analytic results have the form of infinite sums involving Fourier coefficients of the scaling behavior of the Dyson-Schmidt function at the special frequency or the band edge. Binary mass distributions are considered in detail in the limit of a small fraction rho of light masses. Their predictions are compared with extensive numerical data

  5. Atom–atom interactions around the band edge of a photonic crystal waveguide

    Science.gov (United States)

    Hood, Jonathan D.; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E.; Kimble, H. J.

    2016-01-01

    Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields E(x)∝e±ikxx outside the bandgap to localized fields E(x)∝e−κx|x| within the bandgap should be accompanied by a transition from largely dissipative atom–atom interactions to a regime where dispersive atom–atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the D1 line of atomic cesium for N¯=3.0±0.5 atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom–atom interactions with low dissipation into the guided mode. PMID:27582467

  6. Atom-atom interactions around the band edge of a photonic crystal waveguide.

    Science.gov (United States)

    Hood, Jonathan D; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E; Kimble, H J

    2016-09-20

    Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields [Formula: see text] outside the bandgap to localized fields [Formula: see text] within the bandgap should be accompanied by a transition from largely dissipative atom-atom interactions to a regime where dispersive atom-atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the [Formula: see text] line of atomic cesium for [Formula: see text] atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom-atom interactions with low dissipation into the guided mode.

  7. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  8. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  9. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)

    2016-05-06

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  10. The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Sahdan, Muhammad Fauzi; Darma, Yudi, E-mail: yudi@fi.itb.ac.id [Department of Physics, InstitutTeknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

  11. Influence of defects on the absorption edge of InN thin films: The band gap value

    Science.gov (United States)

    Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

    2007-07-01

    We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

  12. Comparison and fit of the two and six band k.p models for the band edge structure of Pbsub(1-x)Snsub(x)Te

    International Nuclear Information System (INIS)

    Weissman, Y.

    1975-10-01

    The band edge structure of Pbsub(1-x)Snsub(x)Te is derived in detail using a two band ellipsoidal model and compared with a more rigorous calculation based on six bands. A quantitative comparison is made for two values of the energy gap, corresponding to the cases where x=0 and x=0.17. It was found that, for the occupied states in nondegenerate materials, both models are practically equivalent. Discrepancies may occur only in high degeneracies or deep inversion layers. The agreement between both models was significantly improved by introducing an effective energy gap in the two band model. It is suggested that the use of the effective energy gap may improve the agreement between the two band model and experiment whenever the details of the band edge structure enter the interpretation of the experimental results. (author)

  13. Paired modes of heterostructure cavities in photonic crystal waveguides with split band edges

    DEFF Research Database (Denmark)

    Mahmoodian, Sahand; Sukhorukov, Andrey A.; Ha, Sangwoo

    2010-01-01

    We investigate the modes of double heterostructure cavities where the underlying photonic crystal waveguide has been dispersion engineered to have two band-edges inside the Brillouin zone. By deriving and using a perturbative method, we show that these structures possess two modes. For unapodized...... cavities, the relative detuning of the two modes can be controlled by changing the cavity length, and for particular lengths, a resonant-like effect makes the modes degenerate. For apodized cavities no such resonances exist and the modes are always non-degenerate....

  14. Red shift of near band edge emission in cerium implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  15. Red shift of near band edge emission in cerium implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

    2009-02-21

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  16. Higher order equivalent edge currents for fringe wave radar scattering by perfectly conducting polygonal plates

    DEFF Research Database (Denmark)

    Breinbjerg, Olav

    1992-01-01

    An approach for including higher order edge diffraction in the equivalent edge current (EEC) method is proposed. This approach, which applies to monostatic as well as bistatic radar configurations with perfectly conducting polygonal plates, involves three distinct sets of EECs. All of these sets...

  17. On the conductance sum rule for the hierarchical edge states of the fractional quantum hall effect

    International Nuclear Information System (INIS)

    Ma Zhongshui; Chen Yixin; Su Zhaobin.

    1993-09-01

    The conductance sum rule for the hierarchical edge channel currents of a Fractional Quantum Hall Effect state is derived analytically within the Haldane-Halperin hierarchy scheme. We provide also an intuitive interpretation for the hierarchical drift velocities of the edge excitations. (author). 12 refs

  18. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands

    International Nuclear Information System (INIS)

    Honda, Syuta; Inuzuka, Kouhei; Inoshita, Takeshi; Ota, Norio; Sano, Nobuyuki

    2014-01-01

    The magnetization and spin transport of asymmetric zigzag-edge graphene nanoribbons, terminated by hydrogen on one edge while unterminated on the other edge, were investigated by a combination of first-principles calculations and a tight-binding approach. At the unterminated edge, a spin-polarized σ edge state of minority spin appears near the Fermi level and contributes to spin transport. This state enters the band gap for ribbon widths of less than 15 chains, dominating the spin-polarized current. This indicates the importance of the σ edge states in the design of spintronic devices using graphene nanoribbons. We also examined the case where the ‘unterminated’ edge is partially terminated by hydrogen. (paper)

  19. Atom-atom interactions around the band edge of a photonic crystal waveguide

    Science.gov (United States)

    Hood, Jonathan D.; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E.; Kimble, H. J.

    2016-09-01

    Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields E(x)∝e±ikxxE(x)∝e±ikxx outside the bandgap to localized fields E(x)∝e-κx|x|E(x)∝e-κx|x| within the bandgap should be accompanied by a transition from largely dissipative atom-atom interactions to a regime where dispersive atom-atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the D1D1 line of atomic cesium for N¯=3.0±0.5N¯=3.0±0.5 atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom-atom interactions with low dissipation into the guided mode.

  20. Determination of conduction and valence band electronic structure ...

    Indian Academy of Sciences (India)

    shifts in the rutile Ti d-band to lower energy with respect to anatase, i.e., ... requires excitation with UV light due to its wide band ... RIXS maps were compared to the theoretical results .... optical methods are insufficient, such as dark samples.

  1. Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

    Science.gov (United States)

    Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

    2018-05-10

    Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

  2. Microscopic bosonization of band structures: x-ray processes beyond the Fermi edge

    Science.gov (United States)

    Snyman, Izak; Florens, Serge

    2017-11-01

    Bosonization provides a powerful analytical framework to deal with one-dimensional strongly interacting fermion systems, which makes it a cornerstone in quantum many-body theory. However, this success comes at the expense of using effective infrared parameters, and restricting the description to low energy states near the Fermi level. We propose a radical extension of the bosonization technique that overcomes both limitations, allowing computations with microscopic lattice Hamiltonians, from the Fermi level down to the bottom of the band. The formalism rests on the simple idea of representating the fermion kinetic term in the energy domain, after which it can be expressed in terms of free bosonic degrees of freedom. As a result, one- and two-body fermionic scattering processes generate anharmonic boson-boson interactions, even in the forward channel. We show that up to moderate interaction strengths, these non-linearities can be treated analytically at all energy scales, using the x-ray emission problem as a showcase. In the strong interaction regime, we employ a systematic variational solution of the bosonic theory, and obtain results that agree quantitatively with an exact diagonalization of the original one-particle fermionic model. This provides a proof of the fully microscopic character of bosonization, on all energy scales, for an arbitrary band structure. Besides recovering the known x-ray edge singularity at the emission threshold, we find strong signatures of correlations even at emission frequencies beyond the band bottom.

  3. The northern edge of the band of solar wind variability: Ulysses at ∼4.5AU

    International Nuclear Information System (INIS)

    Gosling, J.T.; Bame, S.J.; Feldman, W.C.; McComas, D.J.; Riley, P.; Goldstein, B.E.; Neugebauer, M.

    1997-01-01

    Ulysses observations reveal that the northern edge of the low-latitude band of solar wind variability at ∼4.5AU was located at N30 degree in the latter part of 1996 when solar activity was at a minimum. This edge latitude is intermediate between edge latitudes found during previous encounters with the band edge along different portions of Ulysses close-quote polar orbit about the Sun. Corotating interaction regions, CIRs, near the northern edge of the band were tilted in such a manner that the forward and reverse shocks bounding the CIRs were propagating equatorward and poleward, respectively, providing definite confirmation that CIRs have opposed tilts in the opposite solar hemispheres. No shocks or coronal mass ejections, CMEs, were detected during the ∼1.5y traverse of the northern, high-latitude northern hemisphere; however, at the northern edge of the band of variability an expanding CME was observed that was driving a shock into the high-speed wind.copyright 1997 American Geophysical Union

  4. Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

    Science.gov (United States)

    Kaur, Avneet; Bakhshi, A. K.

    2010-04-01

    The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

  5. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo [Department of Electrical Engineering and Computer Science, University of California, Irvine, California 92697 (United States); Figotin, Alexander [Department of Mathematics, University of California, Irvine, California 92697 (United States)

    2016-03-15

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  6. POLYCYCLIC AROMATIC HYDROCARBONS WITH ARMCHAIR EDGES AND THE 12.7 μm BAND

    International Nuclear Information System (INIS)

    Candian, A.; Tielens, A. G. G. M.; Sarre, P. J.

    2014-01-01

    In this Letter, we report the results of density functional theory calculations on medium-sized neutral polycyclic aromatic hydrocarbon (PAH) molecules with armchair edges. These PAH molecules possess strong C-H stretching and bending modes around 3 μm and in the fingerprint region (10-15 μm), and also strong ring deformation modes around 12.7 μm. Perusal of the entries in the NASA Ames PAHs Database shows that ring deformation modes of PAHs are common, although generally weak. Therefore, we propose that armchair PAHs with N C > 65 are responsible for the 12.7 μm aromatic infrared band in H II regions and discuss the astrophysical implications in the context of the PAH life cycle

  7. Adjustment of Sentinel-2 Multi-Spectral Instrument (MSI Red-Edge Band Reflectance to Nadir BRDF Adjusted Reflectance (NBAR and Quantification of Red-Edge Band BRDF Effects

    Directory of Open Access Journals (Sweden)

    David P. Roy

    2017-12-01

    Full Text Available Optical wavelength satellite data have directional reflectance effects over non-Lambertian surfaces, described by the bidirectional reflectance distribution function (BRDF. The Sentinel-2 multi-spectral instrument (MSI acquires data over a 20.6° field of view that have been shown to have non-negligible BRDF effects in the visible, near-infrared, and short wave infrared bands. MSI red-edge BRDF effects have not been investigated. In this study, they are quantified by an examination of 6.6 million (January 2016 and 10.7 million (April 2016 pairs of forward and back scatter reflectance observations extracted over approximately 20° × 10° of southern Africa. Non-negligible MSI red-edge BRDF effects up to 0.08 (reflectance units across the 290 km wide MSI swath are documented. A recently published MODIS BRDF parameter c-factor approach to adjust MSI visible, near-infrared, and short wave infrared reflectance to nadir BRDF-adjusted reflectance (NBAR is adapted for application to the MSI red-edge bands. The red-edge band BRDF parameters needed to implement the algorithm are provided. The parameters are derived by a linear wavelength interpolation of fixed global MODIS red and NIR BRDF model parameters. The efficacy of the interpolation is investigated using POLDER red, red-edge, and NIR BRDF model parameters, and is shown to be appropriate for the c-factor NBAR generation approach. After adjustment to NBAR, red-edge MSI BRDF effects were reduced for the January data (acquired close to the solar principal where BRDF effects are maximal and the April data (acquired close to the orthogonal plane for all the MSI red-edge bands.

  8. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu; Wu, Tao; Liu, Lei

    2014-01-01

    at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014

  9. Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

    OpenAIRE

    Korenev, V. L.

    2005-01-01

    It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

  10. A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

    Science.gov (United States)

    Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

    We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

  11. Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

    Science.gov (United States)

    Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

    2017-11-01

    Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

    KAUST Repository

    Mehraeen, Shafigh; Coropceanu, Veaceslav; Bré das, Jean-Luc

    2013-01-01

    We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case

  13. Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

    International Nuclear Information System (INIS)

    Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

    2014-01-01

    Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

  14. Bi2Se3/CdS/TiO2 hybrid photoelectrode and its band-edge levels

    International Nuclear Information System (INIS)

    Zhang, Qi; Su, Jun; Zhang, Xianghui; Li, Jian; Zhang, Aiqing; Gao, Yihua

    2012-01-01

    Highlights: ► CVD synthesis of Bi 2 Se 3 nanoparticles. ► Bi 2 Se 3 and CdS co-sensitized TiO 2 nanorod arrays electrode was assembled by CVD. ► Direct physical contact heterojunctions were formed at the interfaces of electrode. ► Cascade structure of band-edge levels was formed in Bi 2 Se 3 /CdS/TiO 2 electrode. - Abstract: Bismuth selenide (Bi 2 Se 3 ) was chosen as the sensitizer to TiO 2 nanorod (NR) arrays photoelectrode to harvest infrared (IR) light for its narrow band gap. For utilizing more amount of IR solar energy, Bi 2 Se 3 nanoparticles (NPs) were grown up to a relative larger grain size. And, a cadmium sulfide (CdS) NPs intermediate layer was introduced to help, to coordinate, the structure of band-edge levels in Bi 2 Se 3 /CdS/TiO 2 electrode. Here, a chemical vapor deposition (CVD) strategy was introduced to assemble this kind of composite photoelectrode. And a cascade structure of band-edge levels constructed in it when achieving electrostatic equilibrium in Na 2 S/Na 2 SO 3 aqueous solution electrolyte revealed by electrochemical analysis method, which will facilitate the hydrogen generation.

  15. Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

    Science.gov (United States)

    Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

    2012-09-01

    The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

  16. Characterization of the Valence and Conduction Band Levels of n = 1 2D Perovskites: A Combined Experimental and Theoretical Investigation

    KAUST Repository

    Silver, Scott

    2018-02-13

    This study presents a combined experimental and theoretical study of the electronic structure of two 2D metal halide perovskite films. Ultraviolet and inverse photoemission spectroscopies are performed on solution-processed thin films of the n = 1 layered perovskite butylammonium lead iodide and bromide, BA2PbI4 and BA2PbBr4, characterized by optical absorption and X-ray diffraction, to determine their valence and conduction band densities of states, transport gaps, and exciton binding energies. The electron spectroscopy results are compared with the densities of states determined by density functional theory calculations. The remarkable agreement between experiment and calculation enables a detailed identification and analysis of the organic and inorganic contributions to the valence and conduction bands of these two hybrid perovskites. The electron affinity and ionization energies are found to be 3.1 and 5.8 eV for BA2PbI4, and 3.1 and 6.5 eV for BA2PbBr4. The exciton binding energies are estimated to be 260 and 300 meV for the two materials, respectively. The 2D lead iodide and bromide perovskites exhibit significantly less band dispersion and a larger density of states at the band edges than the 3D analogs. The effects of using various organic ligands are also discussed.

  17. Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure

    Science.gov (United States)

    Chiasera, A.; Meroni, C.; Varas, S.; Valligatla, S.; Scotognella, F.; Boucher, Y. G.; Lukowiak, A.; Zur, L.; Righini, G. C.; Ferrari, M.

    2018-06-01

    All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.

  18. Electrochromic properties of a novel low band gap conductive copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Yigitsoy, Basak; Varis, Serhat; Tanyeli, Cihangir; Akhmedov, Idris M.; Toppare, Levent [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)

    2007-07-10

    A copolymer of 2,5-di(thiophen-2-yl)-1-p-tolyl-1H-pyrrole (DTTP) with 3,4-ethylene dioxythiophene (EDOT) was electrochemically synthesized. The resultant copolymer P(DTTP-co-EDOT) was characterized via cyclic voltammetry, FTIR, SEM, conductivity measurements and spectroelectrochemistry. Copolymer film has distinct electrochromic properties. It has four different colors (chestnut, khaki, camouflage green, and blue). At the neutral state {lambda}{sub max} due to the {pi}-{pi}{sup *} transition was found to be 487 nm and E{sub g} was calculated as 1.65 eV. Double potential step chronoamperometry experiment shows that copolymer film has good stability, fast switching time (less than 1 s) and good optical contrast (20%). An electrochromic device based on P(DTTP-co-EDOT) and poly(3,4-ethylenedioxythiophene) (PEDOT) was constructed and characterized. The device showed reddish brown color at -0.6 V when the P(DTTP-co-EDOT) layer was in its reduced state; whereas blue color at 2.0 V when PEDOT was in its reduced state and P(DTTP-co-EDOT) layer was in its oxidized state. At 0.2 V intermediate green state was observed. Maximum contrast (%{delta}T) and switching time of the device were measured as 18% and 1 s at 615 nm. ECD has good environmental and redox stability. (author)

  19. Origin of long lifetime of band-edge charge carriers in organic-inorganic lead iodide perovskites.

    Science.gov (United States)

    Chen, Tianran; Chen, Wei-Liang; Foley, Benjamin J; Lee, Jooseop; Ruff, Jacob P C; Ko, J Y Peter; Brown, Craig M; Harriger, Leland W; Zhang, Depei; Park, Changwon; Yoon, Mina; Chang, Yu-Ming; Choi, Joshua J; Lee, Seung-Hun

    2017-07-18

    Long carrier lifetime is what makes hybrid organic-inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic-inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

  20. The two bands model for the high temperature conductivity of the binary rare earth alloys

    International Nuclear Information System (INIS)

    Borgiel, W.

    1983-09-01

    The formula for the high temperature spin disorder resistivity for the concentrated Asub(1-x)Bsub(x)C alloys where A,B is an element of Rare Earth (RE) is determined on the basis of two bands model and the coherent potential approximation (CPA). The conductivity given by the 5d bands coming from the RE compounds has been taken into account

  1. Disorder effect on chiral edge modes and anomalous Hall conductance in Weyl semimetals

    International Nuclear Information System (INIS)

    Takane, Yositake

    2016-01-01

    Typical Weyl semimetals host chiral surface states and hence show an anomalous Hall response. Although a Weyl semimetal phase is known to be robust against weak disorder, the effect of disorder on chiral states has not been fully clarified so far. We study the behavior of such chiral states in the presence of disorder and its consequences on an anomalous Hall response, focusing on a thin slab of Weyl semimetal with chiral surface states along its edge. It is shown that weak disorder does not disrupt chiral edge states but crucially affects them owing to the renormalization of a mass parameter: the number of chiral edge states changes depending on the strength of disorder. It is also shown that the Hall conductance is quantized when the Fermi level is located near Weyl nodes within a finite-size gap. This quantization of the Hall conductance collapses once the strength of disorder exceeds a critical value, suggesting that it serves as a probe to distinguish a Weyl semimetal phase from a diffusive anomalous Hall metal phase. (author)

  2. Performance of horn-coupled transition edge sensors for L- and S-band optical detection on the SAFARI instrument

    Science.gov (United States)

    Goldie, D. J.; Glowacka, D. M.; Withington, S.; Chen, Jiajun; Ade, P. A. R.; Morozov, D.; Sudiwala, R.; Trappe, N. A.; Quaranta, O.

    2016-07-01

    We describe the geometry, architecture, dark- and optical performance of ultra-low-noise transition edge sensors as THz detectors for the SAFARI instrument. The TESs are fabricated from superconducting Mo/Au bilayers coupled to impedance-matched superconducting β-phase Ta thin-film absorbers. The detectors have phonon-limited dark noise equivalent powers of order 0.5 - 1.0 aW/ √ Hz and saturation powers of order 20 - 40 fW. The low temperature test configuration incorporating micro-machined backshorts is also described, and construction and typical performance characteristics for the optical load are shown. We report preliminary measurements of the optical performance of these TESs for two SAFARI bands; L-band at 110 - 210 μm and S-band 34 - 60 μm .

  3. Adjustment of Sentinel-2 Multi-Spectral Instrument (MSI) Red-Edge Band Reflectance to Nadir BRDF Adjusted Reflectance (NBAR) and Quantification of Red-Edge Band BRDF Effects

    OpenAIRE

    David P. Roy; Zhongbin Li; Hankui K. Zhang

    2017-01-01

    Optical wavelength satellite data have directional reflectance effects over non-Lambertian surfaces, described by the bidirectional reflectance distribution function (BRDF). The Sentinel-2 multi-spectral instrument (MSI) acquires data over a 20.6° field of view that have been shown to have non-negligible BRDF effects in the visible, near-infrared, and short wave infrared bands. MSI red-edge BRDF effects have not been investigated. In this study, they are quantified by an examination of 6.6 mi...

  4. Edge states of a periodic chain with four-band energy spectrum

    International Nuclear Information System (INIS)

    Eliashvili, Merab; Kereselidze, Davit; Tsitsishvili, George; Tsitsishvili, Mikheil

    2017-01-01

    Tight-binding model on a finite chain is studied with four-fold alternated hopping parameters t_1_,_2_,_3_,_4. Imposing the open boundary conditions, the corresponding recursion is solved analytically with special attention paid to the occurrence of edge states. Corresponding results are strongly corroborated by numeric calculations. It is shown that in the system there exist four different edge phases if the number of sites is odd, and eight edges phases if the chain comprises even number of sites. Phases are labelled by σ_1 ≡ sgn(t_1t_3 − t_2t_4), σ_2 ≡ sgn(t_1t_4 − t_2t_3), and σ_3 ≡ sgn(t_1t_2 − t_3t_4). It is shown that σ_1_,_2_,_3 represent gauge invariant topological indices emerging in the corresponding infinite chains. (author)

  5. Selective Population of Edge States in a 2D Topological Band System.

    Science.gov (United States)

    Galilo, Bogdan; Lee, Derek K K; Barnett, Ryan

    2015-12-11

    We consider a system of interacting spin-one atoms in a hexagonal lattice under the presence of a synthetic gauge field. Quenching the quadratic Zeeman field is shown to lead to a dynamical instability of the edge modes. This, in turn, leads to a spin current along the boundary of the system which grows exponentially fast in time following the quench. Tuning the magnitude of the quench can be used to selectively populate edge modes of different momenta. Implications of the intrinsic symmetries of the Hamiltonian on the dynamics are discussed. The results hold for atoms with both antiferromagnetic and ferromagnetic interactions.

  6. Effects of Conducting Instruction on the Musical Performance of Beginning Band Students.

    Science.gov (United States)

    Kelly, Steven N.

    1997-01-01

    Investigates the effects of conducting instruction on beginning band students' individual rhythmic performance, group rhythmic performance, group performance of legato and staccato, and group performance of phrasing and dynamics. The students represented diverse ethnic and cultural backgrounds. Concludes the conducting instruction is a useful tool…

  7. Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Yijie Zeng

    2014-10-01

    Full Text Available The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs with a diameter of 1.1–2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state. Fixing the ZnSe core size and enlarging the Si shell would turn the NWs from intrinsic to p-type, then to metallic. However, Fixing the Si core and enlarging the ZnSe shell would not change the band gap significantly. The partial charge distribution diagram shows that the conduction band maximum (CBM is confined in Si, while the valence band maximum (VBM is mainly distributed around the interface. Our findings also show that the band gap and conductivity type of ZnSe/Si core-shell NWs can be tuned by the concentration and diameter of the core-shell material, respectively.

  8. Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

    Science.gov (United States)

    Kadashchuk, Andrey; Tong, Fei; Janneck, Robby; Fishchuk, Ivan I.; Mityashin, Alexander; Pavlica, Egon; Köhler, Anna; Heremans, Paul; Rolin, Cedric; Bratina, Gvido; Genoe, Jan

    2017-09-01

    We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

  9. Co-channel and Adjacent Channel Interference Measurement of UMTS and GSM/EDGE Systems in 900 MHz Radio Band

    Directory of Open Access Journals (Sweden)

    S. Hanus

    2008-09-01

    Full Text Available This paper is concerned with inter-system and intra-system interference measurements of 2.5G and 3G mobile communication systems. The both systems UMTS and GSM/EDGE are assumed to operate in a common radio band of 900 MHz. The main system parameters are briefly introduced as well as the measurement scenario. Several simulations and key measurements were performed. Important results are described and commented along with a graphical representation, namely bit error ratio (BER dependence on carrier to noise ratio (CNR in the presence of additive white Gaussian noise (AWGN, the measurement of adjacent channel interference ratio of each system, the coexistence of both systems in same band and the impact of a carrier offset on BER.

  10. Spontaneous emission near the band edge of a three-dimensional photonic crystal: a fractional calculus approach

    International Nuclear Information System (INIS)

    Cheng, S-C; Wu, J-N; Tsai, M-R; Hsieh, W-F

    2009-01-01

    We suggest a better mathematical method, fractional calculus, for studying the behavior of the atom-field interaction in photonic crystals. By studying the spontaneous emission of an atom in a photonic crystal with a one-band isotropic model, we found that the long-time inducing memory of the spontaneous emission is a fractional phenomenon. This behavior could be well described by fractional calculus. The results show no steady photon-atom bound state for the atomic resonant transition frequency lying in the proximity of the allowed band edge which was encountered in a previous study (Woldeyohannes and John 2003 J. Opt. B: Quantum Semiclass. Opt. 5 R43). The correctness of this result is validated by the 'cut-off smoothing' density of photon states (DOS) with fractional calculus. By obtaining a rigorous solution without the multiple-valued problem for the system, we show that the method of fractional calculus has a logically concise property.

  11. Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

    1993-04-20

    We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

  12. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

    DEFF Research Database (Denmark)

    Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg

    2017-01-01

    Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost...... because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications....

  13. Conduction mechanism in Polyaniline-flyash composite material for shielding against electromagnetic radiation in X-band & Ku band

    Directory of Open Access Journals (Sweden)

    Avanish Pratap Singh

    2011-06-01

    Full Text Available β–Naphthalene sulphonic acid (β–NSA doped polyaniline (PANI–flyash (FA composites have been prepared by chemical oxidative polymerization route whose conductivity lies in the range 2.37–21.49 S/cm. The temperature dependence of electrical conductivity has also been recorded which shows that composites follow Mott's 3D–VRH model. SEM images demonstrate that β–NSA leads to the formation of the tubular structure with incorporated flyash phase. TGA studies show the improvement in thermal stability of composites with increase in loading level of flyash. Complex parameters i.e. permittivity (ɛ* = ɛ′- iɛ″ and permeability (μ*=μ′- iμ″ of PANI-FA composites have been calculated from experimental scattering parameters (S11 & S21 using theoretical calculations given in Nicholson–Ross and Weir algorithms. The microwave absorption properties of the composites have been studied in X-band (8.2 – 12.4 GHz & Ku–Band (12.4 – 18 GHz frequency range. The maximum shielding effectiveness observed was 32dB, which strongly depends on dielectric loss and volume fraction of flyash in PANI matrix.

  14. Selective tuning of enhancement in near band edge emission in hydrothermally grown ZnO nanorods coated with gold

    Energy Technology Data Exchange (ETDEWEB)

    Dixit, Tejendra, E-mail: phd12110211@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Palani, I.A., E-mail: palaniia@iiti.ac.in [Mechatronics and Instrumentation Lab, Department of Mechanical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India); Singh, Vipul, E-mail: vipul@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India)

    2016-02-15

    The room-temperature photoluminescence (PL) spectra of hydrothermally grown ZnO nanorods (NRs) coated with Au using dc sputtering and thermal evaporation were systematically investigated. Au coated (via dc sputtering) ZnO NRs were found to exhibit very large near band edge emission enhancement, on the contrary Au coated (via thermal evaporation) ZnO NRs showed suppression in the near band edge emission peak. These observed results were further confirmed by excitation intensity (EI) dependent PL spectra of different samples. Further using Raman spectra it has been observed that the longitudinal optical (LO) phonons exhibit an enhancement and a weakening by the Au coatings, using dc sputtering and thermal evaporation respectively. Finally by controlling the concentration of KMnO{sub 4} as an additive during the hydrothermal growth, selective tuning in the defect density was carried out, which was later utilized to probe the effect of defect density of the Au–ZnO plasmonic coupling. Moreover, our results strongly suggest that the EI dependent PL has a strong dependence on the metal coating technique. The findings presented in this article clearly indicate the dependence of Au–ZnO plasmonic coupling on the overall defect density and the process of Au deposition.

  15. Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

    Directory of Open Access Journals (Sweden)

    Nikola Pascher

    2014-01-01

    Full Text Available We measure the conductance of a quantum point contact while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At a finite magnetic field, we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1, 2, 3, 4, 6, 8 and fractional (ν=1/3, 2/3, 5/3, 4/5 values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on scales of a few hundred nanometers, i.e., on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a nonlocal contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.

  16. Anomalous length dependence of the conductance of graphene nanoribbons with zigzag edges

    KAUST Repository

    Bilić, Ante

    2013-01-01

    Charge transport through two sets of symmetric graphene nanoribbons with zigzag shaped edges in a two-terminal device has been investigated, using density functional theory combined with the non-equilibrium Green\\'s function method. The conductance has been explored as a function of nanoribbon length, bias voltage, and the strength of terminal coupling. The set of narrower nanoribbons, in the form of thiolated linear acenes, shows an anomalous length dependence of the conductance, which at first exhibits a drop and a minimum, followed by an evident rise. The length trend is shown to arise because of a gradual transformation in the transport mechanism, which changes from being governed by a continuum of out-of-plane π type and in-plane state channels to being fully controlled by a single, increasingly more resonant, occupied π state channel. For the set of nanoribbons with a wider profile, a steady increase is observed across the whole length range, owing to the absence of the former transport mechanism. The predicted trends are confirmed by the inclusion of self-interaction correction in the calculations. For both sets of nanoribbons the replacement of the strongly coupling thiol groups by weakly bonding phenathroline has been found to cause a strong attenuation with the length and a generally low conductance. © 2013 American Institute of Physics.

  17. Post-precipitation bias in band-tailed pigeon surveys conducted at mineral sites

    Science.gov (United States)

    Overton, C.T.; Schmitz, R.A.; Casazza, Michael L.

    2005-01-01

    Many animal surveys to estimate populations or index trends include protocol prohibiting counts during rain but fail to address effects of rainfall preceding the count. Prior research on Pacific Coast band-tailed pigeons (Patagioenas fasciata monilis) documented declines in use of mineral sites during rainfall. We hypothesized that prior precipitation was associated with a short-term increase in use of mineral sites following rain. We conducted weekly counts of band-tailed pigeons at 19 Pacific Northwest mineral sites in 2001 and 20 sites in 2002. Results from regression analysis indicated higher counts ???2 days after rain (11.31??5.00% [x????SE]) compared to ???3 days. Individual index counts conducted ???2 days after rain were biased high, resulting in reduced ability to accurately estimate population trends. Models of band-tailed pigeon visitation rates throughout the summer showed increased mineral-site counts during both June and August migration periods, relative to the July breeding period. Our research supported previous studies recommending that mineral-site counts used to index the band-tailed pigeon population be conducted during July. We further recommend conducting counts >3 days after rain to avoid weather-related bias in index estimation. The design of other population sampling strategies that rely on annual counts should consider the influence of aberrant weather not only coincident with but also preceding surveys if weather patterns are thought to influence behavior or detection probability of target species.

  18. Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

    KAUST Repository

    Zhou, Hang

    2014-03-27

    We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

  19. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  20. n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

    Directory of Open Access Journals (Sweden)

    Hikmat S. Hilal

    2003-01-01

    system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN63-/Fe(CN64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.

  1. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

    Directory of Open Access Journals (Sweden)

    Diana E. Proffit

    2010-11-01

    Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

  2. The determination of the conduction mechanism and optical band gap of fluorescein sodium salt

    International Nuclear Information System (INIS)

    Yakuphanoglu, Fahrettin; Sekerci, Memet; Evin, Ertan

    2006-01-01

    The electrical conductivity and optical properties of fluorescein sodium salt in the temperature range of 295-370 K have been investigated. Various conduction models described in the literature were used to elucidate the charge transport mechanism of the compound. It is found that the charge transfer mechanism of the compound is understood in terms of grain boundary scattering. It can be evaluated that the obtained electronic parameters such as mobility, conductivity at room temperature, activation energy and optical band gap suggest that the compound is an organic semiconductor

  3. Contributions of conduction band offset to the enhanced separation efficiency of photoinduced charges for SrTiO3/Bi2O3 heterojunction semiconductor

    International Nuclear Information System (INIS)

    Zhang, Zhenlong; Zhu, Jichun; Li, Shengjun; Mao, Yanli

    2014-01-01

    SrTiO 3 /Bi 2 O 3 heterojunction semiconductor was prepared and characterized by X-ray diffraction, UV–vis absorption spectrum, and scanning electron microscope, surface photovoltage spectroscopy, and photoluminescence spectroscopy. The surface photovoltage spectra indicate that the separation efficiency of photoinduced charges for SrTiO 3 /Bi 2 O 3 was enhanced compared with that of SrTiO 3 or Bi 2 O 3 . The energy band diagram of SrTiO 3 /Bi 2 O 3 heterojunction was directly determined with X-ray photoelectron spectroscopy, and the conduction band offset between SrTiO 3 and Bi 2 O 3 was quantified to be 0.28±0.03 eV. The photoluminescence spectra display that the recombination rate of photoinduced carriers for SrTiO 3 /Bi 2 O 3 decreases compared with that of SrTiO 3 or Bi 2 O 3 , which is mainly due to the energy levels matching between them. Therefore the enhanced separation efficiency of photoinduced charges is resulting from the energy difference between the conduction band edges of SrTiO 3 and Bi 2 O 3 . -- Graphical abstract: Enhanced separation efficiency for SrTiO 3 /Bi 2 O 3 is resulting from the energy difference between the conduction band edges. Highlights: ●Heterojunction semiconductor of SrTiO 3 /Bi 2 O 3 was prepared. ●SrTiO 3 /Bi 2 O 3 presents enhanced separation efficiency. ●Conduction band offset between SrTiO 3 and Bi 2 O 3 is quantified. ●Recombination rate of SrTiO 3 /Bi 2 O 3 decreases compared with single phases

  4. A short course on topological insulators band structure and edge states in one and two dimensions

    CERN Document Server

    Asbóth, János K; Pályi, András

    2016-01-01

    This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators. The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk--boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe). In each case the discussion of simple toy models is followed by the formulation of the general arguments regarding topological insulators. The only prerequisite for the reader is a working knowledge in quantum mechanics, the relevant solid state physics background is provided as part of this self-contained text, which is complemented by end-of-chapter problems.

  5. Simulation study of CD variation caused by field edge effects and out-of-band radiation in EUVL

    Science.gov (United States)

    Gao, Weimin; Niroomand, Ardavan; Lorusso, Gian F.; Boone, Robert; Lucas, Kevin; Demmerle, Wolfgang

    2013-09-01

    Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1x nm half pitch node and beyond, many technological burdens have to be overcome. The "field edge effect" in EUVL is one of them. The image border region of an EUV mask,also known as the "black border" (BB), reflects a few percent of the incident EUV light, resulting in a leakage of light into neighboring exposure fields, especially at the corner of the field where three adjacent exposures take place. This effect significantly impacts on CD uniformity (CDU) across the exposure field. To avoid this phenomenon, a light-shielding border is introduced by etching away the entire absorber and multi-layer (ML)at the image border region of the EUV mask. In this paper, we present a method of modeling the field edge effect (also called the BB effect) by using rigorous lithography simulation with a calibrated resist model. An additional "flare level" at the field edge is introduced on top of the exposure tool flare map to account for the BB effect. The parameters in this model include the reflectivity and the width of the BB, which are mainly determining the leakage of EUV light and its influence range, respectively. Another parameter is the transition width which represents the half shadow effect of the reticle masking blades. By setting the corresponding parameters, the simulation results match well the experimental results obtained at the imec's NXE:3100 EUV exposure tool. Moreover, these results indicate that the out-of-band (OoB) radiation also contributes to the CDU. Using simulation we can also determine the OoB effect rigorouslyusing the methodology of an "effective mask blank". The study in this paper demonstrates that the impact of BB and OoB effects on CDU can be well predicted by simulations.

  6. Coastline change mapping using a spectral band method and Sobel edge operator

    Science.gov (United States)

    Al-Mansoori, Saeed; Al-Marzouqi, Fatima

    2016-10-01

    Coastline extraction has become an essential activity in wake of the natural disasters taking place in some regions such as tsunami, flooding etc. Salient feature of such catastrophes is lack of reaction time available for combating emergency, thus it is the endeavor of any country to develop constant monitoring mechanism of shorelines. This is a challenging task because of the magnitude of changes taking place to the coastline regularly. Previous research findings highlight a need of formulating automation driven methodology for timely and accurate detection of alterations in the coastline impacting sustainability of mankind operating in the coastal zone. In this study, we propose a new approach for automatic extraction of the coastline using remote sensing data. This approach is composed of three main stages. Firstly, classifying pixels of the image into two categories i.e. land and water body by applying two normalized difference indices i.e. Normalized Difference Vegetation Index (NDVI) and Normalized Difference Water Index (NDWI). Then, the process of binary conversion of classified image takes place using a local threshold method. Finally, the coastline is extracted by applying Sobel edge operator with a pair of (3×3) kernels. The approach is tested using 2.5m DubaiSat-1 (DS1) and DubaiSat-2 (DS2) images captured to detect and monitor the changes occurring along Dubai coastal zone within a period of six years from 2009 till 2015. Experimental results prove that the approach is capable of extracting the coastlines from DS1 and DS2 images with moderate human interaction. The results of the study show an increase of 6% in Dubai shoreline resulting on account of numerous man-made infrastructure development projects in tourism and allied sectors.

  7. On averaging the Kubo-Hall conductivity of magnetic Bloch bands leading to Chern numbers

    International Nuclear Information System (INIS)

    Riess, J.

    1997-01-01

    The authors re-examine the topological approach to the integer quantum Hall effect in its original form where an average of the Kubo-Hall conductivity of a magnetic Bloch band has been considered. For the precise definition of this average it is crucial to make a sharp distinction between the discrete Bloch wave numbers k 1 , k 2 and the two continuous integration parameters α 1 , α 2 . The average over the parameter domain 0 ≤ α j 1 , k 2 . They show how this can be transformed into a single integral over the continuous magnetic Brillouin zone 0 ≤ α j j , j = 1, 2, n j = number of unit cells in j-direction, keeping k 1 , k 2 fixed. This average prescription for the Hall conductivity of a magnetic Bloch band is exactly the same as the one used for a many-body system in the presence of disorder

  8. Conduction band offset at the InN/GaN heterojunction

    International Nuclear Information System (INIS)

    Wang Kejia; Lian Chuanxin; Su Ning; Jena, Debdeep; Timler, John

    2007-01-01

    The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ∼0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ΔE C =1.68±0.1 eV

  9. Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

    KAUST Repository

    Zhang, Chendong

    2016-01-18

    Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

  10. Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiOx:H

    International Nuclear Information System (INIS)

    Medvedev, A.V.; Feoktistov, N.A.; Pevtsov, A.B.; Golubev, V.G.

    2005-01-01

    Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO x :H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge

  11. Conduction-band valley spin splitting in single-layer H-T l2O

    Science.gov (United States)

    Ma, Yandong; Kou, Liangzhi; Du, Aijun; Huang, Baibiao; Dai, Ying; Heine, Thomas

    2018-02-01

    Despite numerous studies, coupled spin and valley physics is currently limited to two-dimensional (2D) transition-metal dichalcogenides (TMDCs). Here, we predict an exceptional 2D valleytronic material associated with the spin-valley coupling phenomena beyond 2D TMDCs—single-layer (SL) H-T l2O . It displays large valley spin splitting (VSS), significantly larger than that of 2D TMDCs, and a finite band gap, which are both critically attractive for the integration of valleytronics and spintronics. More importantly, in sharp contrast to all the experimentally confirmed 2D valleytronic materials, where the strong valence-band VSS (0.15-0.46 eV) supports the spin-valley coupling, the VSS in SL H-T l2O is pronounced in its conduction band (0.61 eV), but negligibly small in its valence band (21 meV), thus opening a way for manipulating the coupled spin and valley physics. Moreover, SL H-T l2O possesses extremely high carrier mobility, as large as 9.8 ×103c m2V-1s-1 .

  12. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    International Nuclear Information System (INIS)

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-01-01

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE C ) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE C of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination

  13. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)

    2011-08-17

    Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

  14. Effect of static charge fluctuations on the conduction along the edge of two-dimensional topological insulator

    Science.gov (United States)

    Vayrynen, Jukka; Goldstein, Moshe; Glazman, Leonid

    2013-03-01

    Static charge disorder may create electron puddles in the bulk of a material which nominally is in the insulating state. A single puddle - quantum dot - coupled to the helical edge of a two-dimensional topological insulator enhances the electron backscattering within the edge. The backscattering rate increases with the electron dwelling time in the dot. While remaining inelastic, the backscattering off a dot may be far more effective than the proposed earlier inelastic processes involving a local scatterer with no internal structure. We find the temperature dependence of the dot-induced correction to the universal conductance of the edge. In addition to the single-dot effect, we calculate the classical temperature-independent conductance correction caused by a weakly conducting bulk. We use our theory to assess the effect of static charge fluctuations in a heterostructure on the edge electron transport in a two-dimensional topological insulator. The work at Yale University is supported by NSF DMR Grant No. 1206612 and the Simons Foundation.

  15. Calculation of the band structure of 2d conducting polymers using the network model

    International Nuclear Information System (INIS)

    Sabra, M. K.; Suman, H.

    2007-01-01

    the network model has been used to calculate the band structure the gap energy and Fermi level of conducting polymers in two dimensions. For this purpose, a geometrical classification of possible polymer chains configurations in two dimensions has been introduced leading to a classification of the unit cells based on the number of bonds in them. The model has been applied to graphite in 2D, represented by a three bonds unit cell, and, as a new case, the anti-parallel Polyacetylene chains (PA) in two dimensions, represented by a unit cell with four bons. The results are in good agreement with the first principles calculations. (author)

  16. Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure.

    Science.gov (United States)

    Ma, Xiangchao; Wu, Xin; Wang, Yucheng; Dai, Ying

    2017-07-19

    Charge transfer across the Pt/TiO 2 interface, which is mainly determined by the interface Schottky barrier height (SBH), is an important process in the (photo)catalytic and electronic applications of the Pt/TiO 2 composite. Therefore, systematic investigation of the factors that affect the interface SBH is indispensable for understanding and optimizing its performance. In this work, a systematic study of the effects of the interfacial structure and strain on the SBH of the Pt/TiO 2 (001) interface has been carried out based on the first-principles calculations. The results of interface adhesion energy show that two different interfacial structures for the Pt/TiO 2 (001) heterointerface may exist experimentally, namely, O-Pt bonding and Ti-Pt bonding. Moreover, the interfacial structures result in not only different values for the SBH, but also different dependences of the SBH on strain. Detailed investigations show that these versatile modulations of the SBH with the structure and strain are mainly attributed to the strong dependence of the band edges of TiO 2 and the interfacial potential alignments on the strain and structure, suggesting that these results are general and may be applicable to other metal/TiO 2 heterostructures.

  17. Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

    KAUST Repository

    Mehraeen, Shafigh

    2013-05-01

    We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level. © 2013 American Physical Society.

  18. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  19. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  20. Alignment of the dye's molecular levels with the TiO2 band edges in dye-sensitized solar cells: a DFT-TDDFT study

    International Nuclear Information System (INIS)

    De Angelis, Filippo; Fantacci, Simona; Selloni, Annabella

    2008-01-01

    We present a theoretical study of the lineup of the LUMO of Ru(II)-polypyridyl (N3 and N719) molecular dyes with the conduction band edge of a TiO 2 anatase nanoparticle. We use density functional theory (DFT) and the Car-Parrinello scheme for efficient optimization of the dye-nanoparticle systems, followed by hybrid B3LYP functional calculations of the electronic structure and time-dependent DFT (TDDFT) determination of the lowest vertical excitation energies. The electronic structure and TDDFT calculations are performed in water solution, using a continuum model. Various approximate procedures to compute the excited state oxidation potential of dye sensitizers are discussed. Our calculations show that the level alignment for the interacting nanoparticle-sensitizer system is very similar, within about 0.1 eV, to that for the separated TiO 2 and dye. The excellent agreement of our results with available experimental data indicates that the approach of this work could be used as an efficient predictive tool to help the optimization of dye-sensitized solar cells.

  1. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  2. H-tailored surface conductivity in narrow band gap In(AsN)

    Energy Technology Data Exchange (ETDEWEB)

    Velichko, A. V., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Patanè, A., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Makarovsky, O. [School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD (United Kingdom); Capizzi, M.; Polimeni, A. [Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma (Italy); Sandall, I. C.; Tan, C. H. [Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Giubertoni, D. [Center for Materials and Microsystems—Fondazione Bruno Kessler, via Sommarive 18, 38123 Povo, Trento (Italy); Krier, A.; Zhuang, Q. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2015-01-12

    We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

  3. A simple model for conduction band states of nitride-based double heteroestructures

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero-Sager, L M; Mora-Ramos, M E, E-mail: lgaggero@uaem.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)

    2009-05-01

    In this work we propose an analytical expression for the approximate modeling of the potential energy function describing conduction band bending in III-V nitride quantum wells. It is an alternative approach to the self-consistent Poisson-Schoedinger calculation. The model considers the influence of the many electron system and the built-in electric field inside the well. Hartree and exchange contributions are included along the lines of a local-density Thomas-Fermi-based theory. The effects due to the modulated doping in the barriers is also considered. We report the calculation of the energy spectrum as a function of several input parameters: alloy composition in the barriers, barrier doping concentration, and quantum well width. Our results could be of usefulness in the study of optoelectronic properties in this kind of systems.

  4. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  5. Analyses of Effects of Cutting Parameters on Cutting Edge Temperature Using Inverse Heat Conduction Technique

    Directory of Open Access Journals (Sweden)

    Marcelo Ribeiro dos Santos

    2014-01-01

    Full Text Available During machining energy is transformed into heat due to plastic deformation of the workpiece surface and friction between tool and workpiece. High temperatures are generated in the region of the cutting edge, which have a very important influence on wear rate of the cutting tool and on tool life. This work proposes the estimation of heat flux at the chip-tool interface using inverse techniques. Factors which influence the temperature distribution at the AISI M32C high speed steel tool rake face during machining of a ABNT 12L14 steel workpiece were also investigated. The temperature distribution was predicted using finite volume elements. A transient 3D numerical code using irregular and nonstaggered mesh was developed to solve the nonlinear heat diffusion equation. To validate the software, experimental tests were made. The inverse problem was solved using the function specification method. Heat fluxes at the tool-workpiece interface were estimated using inverse problems techniques and experimental temperatures. Tests were performed to study the effect of cutting parameters on cutting edge temperature. The results were compared with those of the tool-work thermocouple technique and a fair agreement was obtained.

  6. Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb

    Science.gov (United States)

    Li, Tingxin; Wang, Pengjie; Sullivan, Gerard; Lin, Xi; Du, Rui-Rui

    2017-12-01

    We report low-temperature transport measurements in strained InAs /G a0.68I n0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.

  7. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

    Science.gov (United States)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-04-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  8. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2 O 3 nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-03-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  9. Polarization sensitive behaviour of the band-edge transitions in ReS2 and ReSe2 layered semiconductors

    International Nuclear Information System (INIS)

    Ho, C H; Lee, H W; Wu, C C

    2004-01-01

    The polarization sensitive behaviour of the band-edge transitions in ReS 2 and ReSe 2 layered compounds was studied using polarized-transmission and polarized-thermoreflectance (PTR) measurements with polarization angles from θ = 0 deg. (Evector parallel b-axis) to θ = 90 deg. (Evector perpendicular b-axis) at 300 K. The polarization dependence of the polarized energy gaps of ReS 2 and ReSe 2 shows a sinusoidal-like variation with respect to the angular change of the linearly polarized light. The angular dependences of the polarized energy gaps of ReS 2 and ReSe 2 were evaluated. The polarization sensitive behaviour of the band-edge excitons in rhenium disulfide and diselenide was characterized using angular dependent PTR measurements from θ = 0 deg. to 90 deg. The polarized transition intensities of the band-edge excitons (E 1 ex and E 2 ex ) of ReX 2 (X = S, Se) demonstrate a sinusoidal variation with respect to the angular change of the linearly polarized light. The angular dependence of the polarized transition probabilities of E 1 ex and E 2 ex is analysed. The polarization sensitive behaviours of ReX 2 (X = S, Se) layers are discussed

  10. Comparing Broad-Band and Red Edge-Based Spectral Vegetation Indices to Estimate Nitrogen Concentration of Crops Using Casi Data

    Science.gov (United States)

    Wang, Yanjie; Liao, Qinhong; Yang, Guijun; Feng, Haikuan; Yang, Xiaodong; Yue, Jibo

    2016-06-01

    In recent decades, many spectral vegetation indices (SVIs) have been proposed to estimate the leaf nitrogen concentration (LNC) of crops. However, most of these indices were based on the field hyperspectral reflectance. To test whether they can be used in aerial remote platform effectively, in this work a comparison of the sensitivity between several broad-band and red edge-based SVIs to LNC is investigated over different crop types. By using data from experimental LNC values over 4 different crop types and image data acquired using the Compact Airborne Spectrographic Imager (CASI) sensor, the extensive dataset allowed us to evaluate broad-band and red edge-based SVIs. The result indicated that NDVI performed the best among the selected SVIs while red edge-based SVIs didn't show the potential for estimating the LNC based on the CASI data due to the spectral resolution. In order to search for the optimal SVIs, the band combination algorithm has been used in this work. The best linear correlation against the experimental LNC dataset was obtained by combining the 626.20nm and 569.00nm wavebands. These wavelengths correspond to the maximal chlorophyll absorption and reflection position region, respectively, and are known to be sensitive to the physiological status of the plant. Then this linear relationship was applied to the CASI image for generating an LNC map, which can guide farmers in the accurate application of their N fertilization strategies.

  11. Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

    2002-01-01

    We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

  12. Interplay of Coulomb interactions and disorder in three-dimensional quadratic band crossings without time-reversal symmetry and with unequal masses for conduction and valence bands

    Science.gov (United States)

    Mandal, Ipsita; Nandkishore, Rahul M.

    2018-03-01

    Coulomb interactions famously drive three-dimensional quadratic band crossing semimetals into a non-Fermi liquid phase of matter. In a previous work [Nandkishore and Parameswaran, Phys. Rev. B 95, 205106 (2017), 10.1103/PhysRevB.95.205106], the effect of disorder on this non-Fermi liquid phase was investigated, assuming that the band structure was isotropic, assuming that the conduction and valence bands had the same band mass, and assuming that the disorder preserved exact time-reversal symmetry and statistical isotropy. It was shown that the non-Fermi liquid fixed point is unstable to disorder and that a runaway flow to strong disorder occurs. In this paper, we extend that analysis by relaxing the assumption of time-reversal symmetry and allowing the electron and hole masses to differ (but continuing to assume isotropy of the low energy band structure). We first incorporate time-reversal symmetry breaking disorder and demonstrate that there do not appear any new fixed points. Moreover, while the system continues to flow to strong disorder, time-reversal-symmetry-breaking disorder grows asymptotically more slowly than time-reversal-symmetry-preserving disorder, which we therefore expect should dominate the strong-coupling phase. We then allow for unequal electron and hole masses. We show that whereas asymmetry in the two masses is irrelevant in the clean system, it is relevant in the presence of disorder, such that the `effective masses' of the conduction and valence bands should become sharply distinct in the low-energy limit. We calculate the RG flow equations for the disordered interacting system with unequal band masses and demonstrate that the problem exhibits a runaway flow to strong disorder. Along the runaway flow, time-reversal-symmetry-preserving disorder grows asymptotically more rapidly than both time-reversal-symmetry-breaking disorder and the Coulomb interaction.

  13. Near-Band-Edge Optical Responses of CH3NH3PbCl3 Single Crystals: Photon Recycling of Excitonic Luminescence

    Science.gov (United States)

    Yamada, Takumi; Aharen, Tomoko; Kanemitsu, Yoshihiko

    2018-02-01

    The determination of the band gap and exciton energies of lead halide perovskites is very important from the viewpoint of fundamental physics and photonic device applications. By using photoluminescence excitation (PLE) spectra, we reveal the optical properties of CH3NH3PbCl3 single crystals in the near-band-edge energy regime. The one-photon PLE spectrum exhibits the 1 s exciton peak at 3.11 eV. On the contrary, the two-photon PLE spectrum exhibits no peak structure. This indicates photon recycling of excitonic luminescence. By analyzing the spatial distribution of the excitons and photon recycling, we obtain 3.15 eV for the band gap energy and 41 meV for the exciton binding energy.

  14. Itinerant ferromagnetism in the As 4p conduction band of Ba_{0.6}K_{0.4}Mn_{2}As_{2} identified by X-ray magnetic circular dichroism.

    Science.gov (United States)

    Ueland, B G; Pandey, Abhishek; Lee, Y; Sapkota, A; Choi, Y; Haskel, D; Rosenberg, R A; Lang, J C; Harmon, B N; Johnston, D C; Kreyssig, A; Goldman, A I

    2015-05-29

    X-ray magnetic circular dichroism (XMCD) measurements on single-crystal and powder samples of Ba_{0.6}K_{0.4}Mn_{2}As_{2} show that the ferromagnetism below T_{C}≈100  K arises in the As 4p conduction band. No XMCD signal is observed at the Mn x-ray absorption edges. Below T_{C}, however, a clear XMCD signal is found at the As K edge which increases with decreasing temperature. The XMCD signal is absent in data taken with the beam directed parallel to the crystallographic c axis indicating that the orbital magnetic moment lies in the basal plane of the tetragonal lattice. These results show that the previously reported itinerant ferromagnetism is associated with the As 4p conduction band and that distinct local-moment antiferromagnetism and itinerant ferromagnetism with perpendicular easy axes coexist in this compound at low temperature.

  15. Exploring the Potential of WorldView-2 Red-Edge Band-Based Vegetation Indices for Estimation of Mangrove Leaf Area Index with Machine Learning Algorithms

    Directory of Open Access Journals (Sweden)

    Yuanhui Zhu

    2017-10-01

    Full Text Available To accurately estimate leaf area index (LAI in mangrove areas, the selection of appropriate models and predictor variables is critical. However, there is a major challenge in quantifying and mapping LAI using multi-spectral sensors due to the saturation effects of traditional vegetation indices (VIs for mangrove forests. WorldView-2 (WV2 imagery has proven to be effective to estimate LAI of grasslands and forests, but the sensitivity of its vegetation indices (VIs has been uncertain for mangrove forests. Furthermore, the single model may exhibit certain randomness and instability in model calibration and estimation accuracy. Therefore, this study aims to explore the sensitivity of WV2 VIs for estimating mangrove LAI by comparing artificial neural network regression (ANNR, support vector regression (SVR and random forest regression (RFR. The results suggest that the RFR algorithm yields the best results (RMSE = 0.45, 14.55% of the average LAI, followed by ANNR (RMSE = 0.49, 16.04% of the average LAI, and then SVR (RMSE = 0.51, 16.56% of the average LAI algorithms using 5-fold cross validation (CV using all VIs. Quantification of the variable importance shows that the VIs derived from the red-edge band consistently remain the most important contributor to LAI estimation. When the red-edge band-derived VIs are removed from the models, estimation accuracies measured in relative RMSE (RMSEr decrease by 3.79%, 2.70% and 4.47% for ANNR, SVR and RFR models respectively. VIs derived from red-edge band also yield better accuracy compared with other traditional bands of WV2, such as near-infrared-1 and near-infrared-2 band. Furthermore, the estimated LAI values vary significantly across different mangrove species. The study demonstrates the utility of VIs of WV2 imagery and the selected machine-learning algorithms in developing LAI models in mangrove forests. The results indicate that the red-edge band of WV2 imagery can help alleviate the saturation

  16. Toxicity of metal oxide nanoparticles in Escherichia coli correlates with conduction band and hydration energies.

    Science.gov (United States)

    Kaweeteerawat, Chitrada; Ivask, Angela; Liu, Rong; Zhang, Haiyuan; Chang, Chong Hyun; Low-Kam, Cecile; Fischer, Heidi; Ji, Zhaoxia; Pokhrel, Suman; Cohen, Yoram; Telesca, Donatello; Zink, Jeffrey; Mädler, Lutz; Holden, Patricia A; Nel, Andre; Godwin, Hilary

    2015-01-20

    Metal oxide nanoparticles (MOx NPs) are used for a host of applications, such as electronics, cosmetics, construction, and medicine, and as a result, the safety of these materials to humans and the environment is of considerable interest. A prior study of 24 MOx NPs in mammalian cells revealed that some of these materials show hazard potential. Here, we report the growth inhibitory effects of the same series of MOx NPs in the bacterium Escherichia coli and show that toxicity trends observed in E. coli parallel those seen previously in mammalian cells. Of the 24 materials studied, only ZnO, CuO, CoO, Mn2O3, Co3O4, Ni2O3, and Cr2O3 were found to exert significant growth inhibitory effects; these effects were found to relate to membrane damage and oxidative stress responses in minimal trophic media. A correlation of the toxicological data with physicochemical parameters of MOx NPs revealed that the probability of a MOx NP being toxic increases as the hydration enthalpy becomes less negative and as the conduction band energy approaches those of biological molecules. These observations are consistent with prior results observed in mammalian cells, revealing that mechanisms of toxicity of MOx NPs are consistent across two very different taxa. These results suggest that studying nanotoxicity in E. coli may help to predict toxicity patterns in higher organisms.

  17. Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

    KAUST Repository

    Hinkle, C. L.

    2012-04-09

    Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

  18. Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

    KAUST Repository

    Hinkle, C. L.; Galatage, R. V.; Chapman, R. A.; Vogel, E. M.; Alshareef, Husam N.; Freeman, C.; Christensen, M.; Wimmer, E.; Niimi, H.; Li-Fatou, A.; Shaw, J. B.; Chambers, J. J.

    2012-01-01

    Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

  19. Quantum conductance of 4,4-bipyridine molecular junctions: Role of electrode work function and local d band

    DEFF Research Database (Denmark)

    Rauba, J.M.C.; Strange, Mikkel; Thygesen, Kristian Sommer

    2008-01-01

    conductance than the Pt-BPD junction due to the smaller work function of Au as compared to Pt. On the other hand, coupling to the local d band is stronger in the case of Pt and this broadens the LUMO resonance. We find that these effects largely outbalance each other leading to conductances of 0.01G(0) and 0......-principles results within a simple single-level model....

  20. Conductance of Conjugated Molecular Wires: Length Dependence, Anchoring Groups, and Band Alignment

    DEFF Research Database (Denmark)

    Peng, Guowen; Strange, Mikkel; Thygesen, Kristian Sommer

    2009-01-01

    , is not solely determined by the intrinsic band gap of the molecular wire but also depends on the anchoring group. This is because the alignment of the metal Fermi level with respect to the molecular levels is controlled by charge transfer and interface dipoles which in turn are determined by the local chemistry...

  1. Regional estimation of savanna grass nitrogen using the red-edge band of the RapidEye sensor

    CSIR Research Space (South Africa)

    Ramoelo, Abel

    2012-10-01

    Full Text Available recent high resolution spaceborne multispectral sensor (i.e. RapidEye) in the Kruger National Park (KNP) and its surrounding areas, South Africa. The RapidEyesensor contains five spectral bands in the visible-to-near infrared (VNIR), including a red...

  2. Can We Afford These Affordances? GarageBand and the Double-Edged Sword of the Digital Audio Workstation

    Science.gov (United States)

    Bell, Adam Patrick

    2015-01-01

    The proliferation of computers, tablets, and smartphones has resulted in digital audio workstations (DAWs) such as GarageBand in being some of the most widely distributed musical instruments. Positing that software designers are dictating the music education of DAW-dependent music-makers, I examine the fallacy that music-making applications such…

  3. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B. [Case Western Reserve Univ., Cleveland, OH (United States)] [and others

    1997-04-01

    X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

  4. Edge effects on the electronic properties of phosphorene nanoribbons

    International Nuclear Information System (INIS)

    Peng, Xihong; Copple, Andrew; Wei, Qun

    2014-01-01

    Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p z orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

  5. Edge effects on the electronic properties of phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Xihong, E-mail: xihong.peng@asu.edu [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); Copple, Andrew [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Wei, Qun [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); School of Physics and Optoelectronic Engineering, Xidian University, Xi' an 710071 (China)

    2014-10-14

    Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p{sub z} orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

  6. Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Chen, Chang-Hsiao, E-mail: chsiaoc@fcu.edu.tw [Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-03-21

    Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.

  7. Near-edge band structures and band gaps of Cu-based semiconductors predicted by the modified Becke-Johnson potential plus an on-site Coulomb U

    International Nuclear Information System (INIS)

    Zhang, Yubo; Zhang, Jiawei; Wang, Youwei; Gao, Weiwei; Abtew, Tesfaye A.; Zhang, Peihong; Zhang, Wenqing

    2013-01-01

    Diamond-like Cu-based multinary semiconductors are a rich family of materials that hold promise in a wide range of applications. Unfortunately, accurate theoretical understanding of the electronic properties of these materials is hindered by the involvement of Cu d electrons. Density functional theory (DFT) based calculations using the local density approximation or generalized gradient approximation often give qualitative wrong electronic properties of these materials, especially for narrow-gap systems. The modified Becke-Johnson (mBJ) method has been shown to be a promising alternative to more elaborate theory such as the GW approximation for fast materials screening and predictions. However, straightforward applications of the mBJ method to these materials still encounter significant difficulties because of the insufficient treatment of the localized d electrons. We show that combining the promise of mBJ potential and the spirit of the well-established DFT + U method leads to a much improved description of the electronic structures, including the most challenging narrow-gap systems. A survey of the band gaps of about 20 Cu-based semiconductors calculated using the mBJ + U method shows that the results agree with reliable values to within ±0.2 eV

  8. Amplification of transcutaneous and percutaneous bone-conduction devices with a test-band in an induced model of conductive hearing loss.

    Science.gov (United States)

    Park, Marn Joon; Lee, Jae Ryung; Yang, Chan Joo; Yoo, Myung Hoon; Jin, In Suk; Choi, Chi Ho; Park, Hong Ju

    2016-11-01

    Transcutaneous devices have a disadvantage, the dampening effect by soft tissue between the bone and devices. We investigated hearing outcomes with percutaneous and transcutaneous devices using test-bands in an induced unilateral conductive hearing loss. Comparison of hearing outcomes of two devices in the same individuals. The right ear was plugged in 30 subjects and a test-band with devices (Cochlear™ Baha® BP110 Power and Sophono® Alpha-2 MPO™) was applied on the right mastoid tip with the left ear masked. Sound-field thresholds, speech recognition thresholds (SRTs), and word recognition scores (WRSs) were compared. Aided thresholds of Sophono were significantly better than those of Baha at most frequencies. Sophono WRSs (86 ± 12%) at 40 dB SPL and SRTs (14 ± 5 dB HL) were significantly better than those (73 ± 24% and 23 ± 8 dB HL) of Baha. However, Sophono WRSs (98 ± 3%) at 60 dB SPL did not differ from Baha WRSs (95 ± 12%). Amplifications of the current transcutaneous device were not inferior to those of percutaneous devices with a test-band in subjects with normal bone-conduction thresholds. Since the percutaneous devices can increase the gain when fixed to the skull by eliminating the dampening effect, both devices are expected to provide sufficient hearing amplification.

  9. Hydrostatic pressure and conduction band non-parabolicity effects on the impurity binding energy in a spherical quantum dot

    International Nuclear Information System (INIS)

    Sivakami, A.; Mahendran, M.

    2010-01-01

    The binding energy of a shallow hydrogenic impurity in a spherical quantum dot under hydrostatic pressure with square well potential is calculated using a variational approach within the effective mass approximation. The effect of conduction band non-parabolicity on these energies is also estimated. The binding energy is computed for GaAs spherical quantum dot as a function of dot size, hydrostatic pressure both in the presence and absence of the band non-parabolicity effect. Our results show that (i) the hydrostatic pressure increases the impurity binding energy when dot radius increases for a given pressure, (ii) the hydrostatic pressure with the band non-parabolicity effect effectively increases the binding energy such that the variation is large for smaller dots and (iii) the maximum contribution by the non-parabolicity effect is about 15% for narrow dots. Our results are in good agreement with Perez-Merchancano et al. [J. Phys. Condens. Matter 19 (2007) 026225] who have not considered the conduction band non-parabolicity effect.

  10. Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Reno, J.L. [Sandia National Labs., Albuquerque, NM (United States); Kotera, Nobuo [Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan); Wang, Y. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.

    1998-05-01

    The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared cyclotron resonance measurements gave m{sub c} = 0.056m{sub 0}, where m{sub 0} is the free electron mass. Both measurements show no evidence for any significant conduction-band nonparabolicity.

  11. Copper nano composites functionalized by bis-benzimidazole diamide ligand: Effect of size, co-anion dependent conductivity and band gap studies

    International Nuclear Information System (INIS)

    Singla, Manisha; Mohapatra, Subash Chandra; Ahmad, Sharif

    2012-01-01

    Copper (I) and copper (II) nano composites capped with a bis-benzimidazole diamide ligand were prepared by reverse micelle method and characterized using CHNS, FTIR, 1 H NMR, TEM and DLS studies. All particles were spherical ranging between 10 and 70 nm. They displayed a quasi reversible redox wave due to the Cu (II)/Cu (I) reduction process. The E g1 ′ values shift anodically as NO 3 − − − . Electrochemical HOMO and LUMO band gap (E g1 ′ ) for the nano composites were +1.80 (NO 3 − ), +2.80 (Cl − ) and +4.10 (SCN − ) eV, respectively. However, the optical band gap (E g1 ) for the nano composites was calculated from their absorption edges and lie between 1.77 and 4.13 eV. Fluorescence studies reveal that nano composites in themselves behave as an enhancer and quencher in respect to ligand, Quantum yield (φ) is varying from 0.008 to 0.02 photon. The activation energies range from 34 to 54 kJ mol −1 and are quite low in comparison to that of the free bis-benzimidazole diamide ligand (137 kJ mol −1 ). The lower activation energies further re-emphasize the nano size of these composites. At room temperature, the dc conductivity lies between 1 × 10 −4 –9.33 × 10 −4 S cm −1 [NO 3 − > SCN − > Cl − ] indicating them to be on the semiconductor insulator interface. The dielectric constant, dielectric loss and the ac conductivity were measured for all nano at room temperature and below the room temperature for the nano composite containing nitrate as co-anion. The conductivity was found to follow the correlated barrier hopping (CBH) mechanism; the exponent factor (s) varies from 0.5 to 1. -- Highlights: ► Nano composites of copper, capped by bis benzimidazole diamide ligand. ► Such copper nano composites have not been used in conductivity studies before. ► Conductance studies for these thus make this work unique. ► The dc conductivity of these composites is much higher than normal.

  12. The Connoisseurship of Conducting: A Qualitative Study of Exemplary Wind Band Conductors

    Science.gov (United States)

    Barry, Nancy; Henry, Daniel

    2015-01-01

    This study aimed to gain an in-depth perspective through examining how the conducting pedagogy of three selected exemplary high school and college instrumental music conductors function within the context of an actual rehearsal. A typical rehearsal was video recorded, followed by a "think-aloud" session in which the conductor viewed the…

  13. Ultrafast conductivity in a low-band-gap polyphenylene and fullerene blend studied by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Nienhuys, H.-K.; Perzon, E.; Zhang, F.; Inganäs, O.; Kužel, Petr; Sundström, V.

    2009-01-01

    Roč. 79, č. 24 (2009), 245326/1-245326/7 ISSN 1098-0121 R&D Projects: GA ČR(CZ) GP202/09/P099; GA MŠk LC512; GA ČR(CZ) GA202/06/0286 Institutional research plan: CEZ:AV0Z10100520 Keywords : time-resolved terahertz spectroscopy * ultrafast conductivity * polymer * solar-cell material Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  14. Photoelectric emission from negative-electron-affinity diamond (111) surfaces: Exciton breakup versus conduction-band emission

    International Nuclear Information System (INIS)

    Bandis, C.; Pate, B.B.

    1995-01-01

    We have recently reported that bound electron-hole pairs (Mott-Wannier excitons) are the dominant source of photoelectron emission from specially prepared [''as-polished'' C(111)-(1x1):H] negative-electron-affinity diamond surfaces for near-band-gap excitation up to 0.5 eV above threshold [C. Bandis and B. B. Pate, Phys. Rev. Lett. 74, 777 (1995)]. It was found that photoexcited excitons transport to the surface, break up, and emit their electron. In this paper, we extend the study of exciton-derived emission to include partial yield (constant final-state) analysis as well as angular distribution measurements of the photoelectric emission. In addition, we find that exciton-derived emission does not always dominate. Photoelectric emission properties of the in situ ''rehydrogenated'' (111)-(1x1):H diamond surface are characteristically different than emission observed from the as-polished (111)-(1x1):H surface. The rehydrogenated surface has additional downward band bending as compared to the as-polished surface. In confirmation of the assignment of photoelectric yield to exciton breakup emission, we find a significant enhancement of the total electron yield when the downward band bending of the hydrogenated surface is increased. The functional form of the observed total electron yield demonstrates that, in contrast to the as-polished surface, conduction-band electrons are a significant component of the observed photoelectric yield from the in situ hydrogenated (111)-(1x1):H surface. Furthermore, electron emission characteristics of the rehydrogenated surface confirms our assignment of a Fan phonon-cascade mechanism for thermalization of excitons

  15. Linear analysis of an X-band backward wave oscillator with a circular-edge disk-loaded cylindrical waveguide driven by an annular electron beam

    Science.gov (United States)

    Hasan Sagor, Rakibul; Ruhul Amin, Md.

    2017-10-01

    An X-band backward wave oscillator (BWO) with a circular-edge disk-loaded periodic metallic slow wave structure (CDSWS) is proposed and studied numerically. The structure is the modified version of our previously modeled semi-circularly corrugated slow wave structure (SCCSWS). The CDSWS is energized by an intense relativistic electron beam (IREB) which is directed by a strong magnetic field. The electromagnetic (EM) wave of the slow wave structure (SWS) merges with the space charge wave of the beam under the guidance of the strong axial magnetic field. The inner wall contour of CDSWS is modeled by a finite Fourier series and the dispersion characteristics of different TM modes are solved by utilizing the linear Rayleigh-Fourier (R-F) technique, which is verified by a commercial EM solver. To study the temporal growth rate (TGR) for the fundamental TM01 mode, the dispersion equation is solved for the beam current of 0.1-1.0kA and the beam energy of 205-665kV. For the TM01 mode, the TGR that occurs at the unstable region, which provides a qualitative index of the strength of the microwave generation, is compared with those of the BWOs with sinusoidally corrugated SWS (SCSWS), disk-loaded SWS (DLSWS) and triangularly corrugated SWS (TrCSWS) for different beam parameters. The dimension of the CDSWS is determined by comparing the dispersion characteristics of fundamental TM01 mode with DLSWS and SCSWS. For the same set of beam parameters, an average of 3.5%, 7%, 1.5% and more than 50% higher TGR have been obtained with the proposed CDSWS than that of SCSWS, DLSWS, TrCSWS and SCCSWS respectively. Moreover, the presented structure also provides an advantage in the fabrication process and is less prone to RF breakdown since it has no sharp edges in the inner wall where the electric field intensity can be infinitely high.

  16. Origin of the near-band-edge photoluminescence in ZnO nanorods realised by vapour phase epitaxy and aqueous chemical growth

    Energy Technology Data Exchange (ETDEWEB)

    Bekeny, C.; Hilker, B.; Wischmeier, L.; Voss, T. [IFP, University of Bremen, P.O Box 330440, 28334 Bremen (Germany); Postels, B.; Mofor, A.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, P.O Box 3329, 38023 Braunschweig (Germany)

    2007-07-01

    Well established high temperature growth techniques like the vapourliquid-solid (VLS: 1100 C) and vapour-phase-epitaxy (VPE: 800 C) have been successfully optimized while the low-temperature aqueous chemical growth (ACG: 90 C) is being extended to yield large-scale high quality ZnO nanorods. Here, a detailed and systematic photoluminescence (PL) study is presented to understand the microscopic processes responsible for the near-band-edge (NBE) emission in nanorods obtained from these processes. For the ACG samples, the as-grown nanorods show relatively broad NBE emission (15 meV) attributed to the presence of large donor densities. After annealing in various atmospheres at {proportional_to}800 C, a significant reduction of the linewidth ({proportional_to}4 meV) and even the appearance of relatively sharp excitonic transitions is explained by the drastic reduction of the donor density. In contrast, the as-grown VPE and VLS samples exhibit well-resolved and sharp peaks resulting from exciton-related transitions. There is a shift in the room-temperature PL peak for VLS and VPE samples and is shown to result from contributions of the free exciton peak, its first and second order phonon replicas and not due to quantum confinement and or laser heating as assumed in literature.

  17. Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

    Science.gov (United States)

    Termentzidis, Konstantinos; Isaiev, Mykola; Salnikova, Anastasiia; Belabbas, Imad; Lacroix, David; Kioseoglou, Joseph

    2018-02-14

    We report the thermal transport properties of wurtzite GaN in the presence of dislocations using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration are analyzed and found to considerably reduce the thermal conductivity while impacting its temperature dependence in a different manner. Isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T -1 variation in combination with an exponent factor that depends on the material's nature, type and the structural characteristics of the dislocation core. Furthermore, the impact of the dislocation density on the thermal conductivity of bulk GaN is examined. The variation and absolute values of the total thermal conductivity as a function of the dislocation density are similar for defected systems with both screw and edge dislocations. Nevertheless, we reveal that the thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are different. The discrepancy of the anisotropy of the thermal conductivity grows with increasing density of dislocations and it is more pronounced for the systems with edge dislocations. Besides the fundamental insights of the presented results, these could also be used for the identification of the type of dislocations when one experimentally obtains the evolution of thermal conductivity with temperature since each type of dislocation has a different signature, or one could extract the density of dislocations with a simple measurement of thermal anisotropy.

  18. k-dependent spectrum and optical conductivity near metal-insulator transition in multi-orbital hubbard bands

    International Nuclear Information System (INIS)

    Miura, Oki; Fujiwara, Takeo

    2006-01-01

    We apply the dynamical mean field theory (DMFT) combined with the iterative perturbation theory (IPT) to the doubly degenerate e g and the triply degenerate f 2g bands on a simple cubic lattice and a body-centered cubic lattice and calculate the spectrum and optical conductivity in arbitrary electron occupation. The spectrum simultaneously shows the effects of multiplet structure together with the electron ionization and affinity levels of different electron occupations, coherent peaks at the Fermi energy in the metallic phase and an energy gap at an integer filling of electrons for sufficiently large Coulomb U. We also discuss the critical value of the Coulomb U for degenerate orbitals on a simple cubic lattice and a body-centered cubic lattice. (author)

  19. L-band nighttime scintillations at the northern edge of the EIA along 95°E during the ascending half of the solar cycle 24

    Science.gov (United States)

    Dutta, Barsha; Kalita, Bitap Raj; Bhuyan, Pradip Kumar

    2018-04-01

    The characteristics of nighttime ionospheric scintillations measured at the L-band frequency of 1.575 GHz over Dibrugarh (27.5°N, 95°E, MLAT ∼ 17°N, 43° dip) during the ascending half of the solar cycle 24 from 2010 to 2014 have been investigated and the results are presented in this paper. The measurement location is within or outside the zone of influence of the equatorial ionization anomaly depending on solar and geomagnetic activity. Maximum scintillation is observed in the equinoxes irrespective of solar activity with clear asymmetry between March and September. The occurrence frequency in the solstices shifts from minimum in the June solstice in low solar activity to a minimum in the December solstice in high solar activity years. A significant positive correlation of occurrence of scintillations in the June solstice with solar activity has been observed. However, earlier reports from the Indian zone (∼75°E) indicate negative or no correlation of scintillation in June solstice with solar activity. Scintillations activity/occurrence in solstices indicates a clear positive correlation with Es recorded simultaneously by a collocated Ionosonde. In equinoxes, maximum scintillations occur in the pre-midnight hours while in solstices the occurrence frequency peaks just after sunset. The incidence of strong scintillations (S4 ≥ 0.4) increases with increase in solar activity. Strong (S4 ≥ 0.4) ionospheric scintillations accompanied by TEC depletions in the pre-midnight period is attributed to equatorial irregularities whereas the dusk period scintillations are related to the sporadic-E activity. Present results thus indicate that the current location at the northern edge of the EIA behaves as low as well as mid-latitude location.

  20. Near-band-edge optical responses of solution-processed organic-inorganic hybrid perovskite CH3NH3PbI3 on mesoporous TiO2 electrodes

    Science.gov (United States)

    Yamada, Yasuhiro; Nakamura, Toru; Endo, Masaru; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2014-03-01

    We studied the near-band-edge optical responses of solution-processed CH3NH3PbI3 on mesoporous TiO2 electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and 1.64 eV, respectively. The transient absorption spectrum shows a negative peak at 1.61 eV owing to photobleaching at the band-gap energy, indicating a direct band-gap semiconductor. On the basis of the temperature-dependent PL and diffuse reflectance spectra, we clarified that the absorption tail at room temperature is explained in terms of an Urbach tail and consistently determined the band-gap energy to be ˜1.61 eV at room temperature.

  1. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    International Nuclear Information System (INIS)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-01-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

  2. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    International Nuclear Information System (INIS)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-01-01

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10 21  cm −3 ). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10 19  cm −3 to 1.4 × 10 21  cm −3 comes with a change of the effective electron mass from 0.35 m 0 to 0.53 m 0 and a decrease in the optical frequency mobility from about 20 cm 2  V −1  s −1 to 9 cm 2  V −1  s −1

  3. Plasmons on the edge of MoS2 nanostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer

    2014-01-01

    Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis...... of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially...... resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles....

  4. Ge L{sub 3}-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge{sub 2}Sb{sub 2}Te{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Mitrofanov, K. V. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Kolobov, A. V., E-mail: a.kolobov@aist.go.jp; Fons, P. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan and Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Wang, X.; Tominaga, J. [Nanoelectronics Research Institute and Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Tamenori, Y.; Uruga, T. [Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan); Ciocchini, N.; Ielmini, D. [DEIB - Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

    2014-05-07

    A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change alloys, such as Ge{sub 2}Sb{sub 2}Te{sub 5}, known as drift, is a serious technological issue for application of phase-change memory. While it has been proposed that drift is related to structural relaxation, no direct structural results have been reported so far. Here, we report the results of Ge L{sub 3}-edge x-ray absorption measurements that suggest that the drift in electrical conductivity is associated with the gradual conversion of tetrahedrally coordinated Ge sites into pyramidal sites, while the system still remains in the amorphous phase. Based on electronic configuration arguments, we propose that during this process, which is governed by the existence of lone-pair electrons, the concentration of free carriers in the system decreases resulting in an increase in resistance despite the structural relaxation towards the crystalline phase.

  5. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  6. Influence of 4-tert-butylpyridine/guanidinium thiocyanate co-additives on band edge shift and recombination of dye-sensitized solar cells: experimental and theoretical aspects

    International Nuclear Information System (INIS)

    Wang, Yuqiao; Lu, Jing; Yin, Jie; Lü, Gang; Cui, Yingmin; Wang, Shasha; Deng, Shengyuan; Shan, Dan; Tao, Hailiang; Sun, Yueming

    2015-01-01

    Graphical Abstract: The frontier orbitals between 4-tert-butylpyridine and TiO 2 are sufficiently overlapped to induce the negative shift of Fermi energy, increasing the open-circuit voltage. The guanidinium cations can be tightly absorbed on TiO 2 surface to form a passivated layer, depressing the recombination rate and improving the short-circuit photocurrent. The photovoltaic performance might be as a result of a synergistic effect of co-additives due to the competitive effect between volume and electrostatic effect. - Highlights: • The frontier orbitals between 4-tert-butylpyridine and TiO 2 are sufficiently overlapped to induce the negative shift of Fermi energy, increasing the open-circuit voltage. • The guanidinium cations can be tightly absorbed on TiO 2 surface by electrostatic attraction to form a passivated layer, depressing the recombination rate and improving the short-circuit photocurrent. • The photovoltaic performance might be as a result of a synergistic effect of co-additives due to the competitive effect between volume and electrostatic effect. - ABSTRACT: The co-additives of 4-tert-butylpyridine (TBP) and guanidinium thiocyanate (GuSCN) in electrolytes can prominently affect the photovoltaic behavior of dye-sensitized solar cell (DSSC) due to their advantages fitting with energy levels and charge transfer. Mott-Schottky analysis is used to quantify the TiO 2 band edge movement to clarify the change of open-circuit voltage. The corresponding kinetic investigations are carried out using cyclic voltammetry, electrochemical impedance spectroscopy, intensity modulated photocurrent/photovoltage spectroscopy and charge extraction. Theoretically, the density functional theory (DFT) method is performed to explore the details of the adsorption, including the interacting energy, Fermi energy and frontier orbitals properties. The results show that the frontier orbitals between TBP and TiO 2 are sufficiently overlapped to induce the negative shift of

  7. Electrons in feldspar II: A consideration of the influence of conduction band-tail states on luminescence processes

    DEFF Research Database (Denmark)

    Poolton, H.R.J.; Ozanyan, K.B.; Wallinga, J.

    2002-01-01

    consider what influence the band tails have on the luminescence properties of feldspar, where electrons travel through the sample prior to recombination. The work highlights the dominant role that 0.04-0.05-eV phonons play in both the luminescence excitation and emission processes of these materials...

  8. Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO{sub 2} core/shell self-organized nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fabbri, Filippo; Rossi, Francesca; Attolini, Giovanni; Salviati, Giancarlo; Iannotta, Salvatore [IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma (Italy); Aversa, Lucrezia; Verucchi, Roberto; Nardi, Marco [IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento (Italy); Fukata, Naoki [International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Dierre, Benjamin; Sekiguchi, Takashi [Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2010-08-27

    We report the influence of the native amorphous SiO{sub 2} shell on the cathodoluminescence emission of 3C-SiC/SiO{sub 2} core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO{sub 2} and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO{sub 2}-SiC interface properties is also reported.

  9. Energy shift and conduction-to-valence band transition mediated by a time-dependent potential barrier in graphene

    Science.gov (United States)

    Chaves, Andrey; da Costa, D. R.; de Sousa, G. O.; Pereira, J. M.; Farias, G. A.

    2015-09-01

    We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite-step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change of the barrier height with time. If this rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasiparticle.

  10. Studies Conducted of Sodium Carbonate Contaminant Found on the Wing Leading Edge and the Nose Cap of the Space Shuttle Orbiter

    Science.gov (United States)

    Jacobson, Nathan S.; Palou, Jaime J.

    2003-01-01

    In early 2001, three of the space shuttle orbiters were found to have a sodium carbonate contaminant on the wing leading edge and nose cap. These parts are made of a reinforced carbon/carbon material protected by silicon carbide (SiC) and a glass coating. The glass coating is known as Type A and is primarily sodium silicate with particles of SiC. NASA Glenn Research Center's Environmental Durability Branch was asked to determine the chemistry of this deposit formation and assess any possible detrimental effects. At low temperatures, the reverse reaction is favorable. Previous studies of the corrosion of glass show that carbon dioxide in the presence of water does form sodium carbonate on sodium silicate glass (ref. 1). It is quite likely that a similar scenario exists for the orbiter wing leading edge. All three orbiters that formed sodium carbonate were exposed to rain. This formation of sodium carbonate was duplicated in the laboratory. The Type A glass, which coats the wing leading edge and nose cap, was made in a freestanding form and exposed to water in two separate experiments. In one set of experiments, the coating was placed in a petri dish filled with water. As the water evaporated, sodium carbonate formed. In another case, water was slowly dripped on the coating and sodium carbonate formed. The sodium carbonate was detected by chemical analysis and, in some cases, xray diffraction showed a hydrated sodium carbonate. The next step was to examine possible detrimental effects of this sodium carbonate. There are three likely scenarios for the sodium carbonate deposit: (1) it may be removed with a simple rinse, (2) it may remain and flow back into the Type A glass after heating during reentry, or (3) it may remain and flow onto unprotected SiC and/or other parts after heating during reentry. The effect of case 1 is to remove the Na2O constituent from the Type A glass, thus decreasing its effectiveness as a sealant. Even so, overall, it is probably the best

  11. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

    Energy Technology Data Exchange (ETDEWEB)

    Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

  12. Edge instabilities of topological superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, Johannes S. [Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg (Germany); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Assaad, Fakher F. [Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg (Germany); Schnyder, Andreas P. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2016-07-01

    Nodal topological superconductors display zero-energy Majorana flat bands at generic edges. The flatness of these edge bands, which is protected by time-reversal and translation symmetry, gives rise to an extensive ground state degeneracy and a diverging density of states. Therefore, even arbitrarily weak interactions lead to an instability of the flat-band edge states towards time-reversal and translation-symmetry broken phases, which lift the ground-state degeneracy. Here, we employ Monte Carlo simulations combined with mean-field considerations to examine the instabilities of the flat-band edge states of d{sub xy}-wave superconductors. We find that attractive interactions induce a complex s-wave pairing instability together with a density wave instability. Repulsive interactions, on the other hand, lead to ferromagnetism mixed with spin-triplet pairing at the edge. We discuss the implications of our findings for experiments on cuprate high-temperature superconductors.

  13. Imaging edges of nanostructured graphene

    DEFF Research Database (Denmark)

    Kling, Jens; Cagliani, Alberto; Booth, T. J.

    Graphene, as the forefather of 2D-materials, attracts much attention due to its extraordinary properties like transparency, flexibility and outstanding high conductivity, together with a thickness of only one atom. However, graphene also possesses no band gap, which makes it unsuitable for many...... electronic applications like transistors. It has been shown theoretically that by nanostructuring pristine graphene, e.g. with regular holes, the electronic properties can be tuned and a band gap introduced. The size, distance and edge termination of these “defects” influence the adaptability....... Such nanostructuring can be done experimentally, but especially characterization at atomic level is a huge challenge. High-resolution TEM (HRTEM) is used to characterize the atomic structure of graphene. We optimized the imaging conditions used for the FEI Titan ETEM. To reduce the knock-on damage of the carbon atoms...

  14. Strong coupling between a permalloy ferromagnetic contact and helical edge channel in a narrow HgTe quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Kononov, A.; Egorov, S. V. [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation); Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A. [Institute of Semiconductor Physics (Russian Federation); Deviatov, E. V., E-mail: dev@issp.ac.ru [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation)

    2016-11-15

    We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8 nm wide, HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. This allows selective and spin-sensitive contacting of helical edge states.

  15. Design of an L-band normally conducting RF gun cavity for high peak and average RF power

    Energy Technology Data Exchange (ETDEWEB)

    Paramonov, V., E-mail: paramono@inr.ru [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Philipp, S. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Rybakov, I.; Skassyrskaya, A. [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Stephan, F. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany)

    2017-05-11

    To provide high quality electron bunches for linear accelerators used in free electron lasers and particle colliders, RF gun cavities operate with extreme electric fields, resulting in a high pulsed RF power. The main L-band superconducting linacs of such facilities also require a long RF pulse length, resulting in a high average dissipated RF power in the gun cavity. The newly developed cavity based on the proven advantages of the existing DESY RF gun cavities, underwent significant changes. The shape of the cells is optimized to reduce the maximal surface electric field and RF loss power. Furthermore, the cavity is equipped with an RF probe to measure the field amplitude and phase. The elaborated cooling circuit design results in a lower temperature rise on the cavity RF surface and permits higher dissipated RF power. The paper presents the main solutions and results of the cavity design.

  16. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  17. Long-time Luminescence Kinetics of Localized excitons and conduction Band Edges Smearing in ZnSe(1-c)Tec Solid Solutions

    DEFF Research Database (Denmark)

    Klochikhin, O.; Ogloblin, S. G.; Permogorov, S.

    2000-01-01

    It is shown that the integrated luminescence intensity of localized excitons in solid solutions ZnSe(1 - c)Tec has a component slowly decaying with time. After the excitation above the mobility threshold, the long-time intensity decreases exponentially, with a fractional exponent changing from...

  18. Broad-band conductivity and dielectric spectroscopy of composites of multiwalled carbon nanotubes and poly(ethylene terephthalate) around their low percolation threshold

    Science.gov (United States)

    Nuzhnyy, D.; Savinov, M.; Bovtun, V.; Kempa, M.; Petzelt, J.; Mayoral, B.; McNally, T.

    2013-02-01

    Composites of multiwalled carbon nanotubes with poly(ethylene terephthalate) (PET-MWCNT) with up to 3 vol% MWCNTs were prepared and characterized by broad-band AC conductivity and dielectric spectroscopy up to the infrared range using several techniques. A very low electrical percolation threshold of 0.07 vol% MWCNTs was revealed from the low-frequency conductivity plateau as well as from DC conductivity, whose values show the same critical power dependence on MWCNT concentration with the exponent t = 4.3. Above the plateau, the AC conductivity increases with frequency up to the THz range, where it becomes overlapped with the absorption of vibrational modes. The temperature dependence down to ˜5 K has shown semiconductor behaviour with a concentration-independent but weakly temperature-dependent small activation energy of ˜3 meV. The behaviour is compatible with the previously suggested fluctuation-induced tunnelling conductivity model through a thin (˜1 nm) polymer contact layer among the adjacent MWCNTs within percolated clusters. At higher frequencies, deviations from the simple universal conductivity behaviour are observed, indicating some distribution of energy barriers for an electron hopping mechanism.

  19. Quantum conductance of zigzag graphene oxide nanoribbons

    International Nuclear Information System (INIS)

    Kan, Zhe; Nelson, Christopher; Khatun, Mahfuza

    2014-01-01

    The electronic properties of zigzag graphene oxide nanoribbons (ZGOR) are presented. The results show interesting behaviors which are considerably different from the properties of the perfect graphene nanoribbons (GNRs). The theoretical methods include a Huckel-tight binding approach, a Green's function methodology, and the Landauer formalism. The presence of oxygen on the edge results in band bending, a noticeable change in density of states and thus the conductance. Consequently, the occupation in the valence bands increase for the next neighboring carbon atom in the unit cell. Conductance drops in both the conduction and valence band regions are due to the reduction of allowed k modes resulting from band bending. The asymmetry of the energy band structure of the ZGOR is due to the energy differences of the atoms. The inclusion of a foreign atom's orbital energies changes the dispersion relation of the eigenvalues in energy space. These novel characteristics are important and valuable in the study of quantum transport of GNRs

  20. TiO 2 Conduction Band Modulation with In 2 O 3 Recombination Barrier Layers in Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Brennan, Thomas P.

    2013-11-21

    Atomic layer deposition (ALD) was used to grow subnanometer indium oxide recombination barriers in a solid-state dye-sensitized solar cell (DSSC) based on the spiro-OMeTAD hole-transport material (HTM) and the WN1 donor-π-acceptor organic dye. While optimal device performance was achieved after 3-10 ALD cycles, 15 ALD cycles (∼2 Å of In2O 3) was observed to be optimal for increasing open-circuit voltage (VOC) with an average improvement of over 100 mV, including one device with an extremely high VOC of 1.00 V. An unexpected phenomenon was observed after 15 ALD cycles: the increasing VOC trend reversed, and after 30 ALD cycles VOC dropped by over 100 mV relative to control devices without any In2O3. To explore possible causes of the nonmonotonic behavior resulting from In2O3 barrier layers, we conducted several device measurements, including transient photovoltage experiments and capacitance measurements, as well as density functional theory (DFT) studies. Our results suggest that the VOC gains observed in the first 20 ALD cycles are due to both a surface dipole that pulls up the TiO2 conduction band and recombination suppression. After 30 ALD cycles, however, both effects are reversed: the surface dipole of the In2O3 layer reverses direction, lowering the TiO 2 conduction band, and mid-bandgap states introduced by In 2O3 accelerate recombination, leading to a reduced V OC. © 2013 American Chemical Society.

  1. Infrared and dc conductivity in metals with strong scattering: Nonclassical behavior from a generalized Boltzmann equation containing band-mixing effects

    International Nuclear Information System (INIS)

    Allen, P.B.; Chakraborty, B.

    1981-01-01

    Metals with high resistivity (approx.100 μΩ cm) seem to show weaker variation of resistivity (as a function of temperature and perhaps also static disorder) than predicted by semiclassical (Bloch-Boltzmann) theory (SBT). We argue that the effect is not closely related to Anderson localization, and therefore does not necessarily signify a failure of the independent collision approximation. Instead we propose a failure of the semiclassical acceleration and conduction approximations. A generalization of Boltzmann theory is made which includes quantum (interband) acceleration and conduction, as well as a complete treatment of interband-collision effects (within the independent-collision approximation). The interband terms enhance short-time response to E fields (because the theory satisfies the exact f-sum rule instead of the semiclassical approximation to it). This suggests that the additional conductivity, as expressed phenomenologically by the shunt resistor model, is explained by interband effects. The scattering operator is complex, its imaginary parts being related to energy-band renormalization caused by the disorder. Charge conservation is respected and thermal equilibrium is restored by the collision operator. The theory is formally solved for the leading corrections to SBT, which have the form of a shunt resistor model. At infrared frequencies, the conductivity mostly obeys the Drude law sigma(ω)approx.sigma(0)(1-iωtau) -1 , except for one term which goes as (1-iωtau) -2

  2. Geophysical exploration to estimate the surface conductivity of residual argillaceous bands in the groundwater repositories of coastal sediments of EOLGA, Nigeria

    Directory of Open Access Journals (Sweden)

    N.J. George

    2017-06-01

    Full Text Available Electrical geophysical applications exploit a petrophysical relationship governing the electrical properties of rocks/sediments when field data are coupled with laboratory data. Given the robust analytical techniques of electrical method and the interrelationship with laboratory measurements, it seems natural to classify, and hence simplify, the spatially aggregated conductivity information on the basis of rock/sediment lithology. This provides a unique link between lithological sediment/rock parameters and the physical parameters controlling bulk conductivity. In this work vertical electrical sounding (VES technique employing Schlumberger configuration integrated with sediment and water analysis have been used to determine the conductivity of argillaceous bands of aquifer sands (fine- coarse sands in Eastern Obolo Local Government Area (EOLGA. The analysis of the data shows that the aquifer systems composing of fine sands, siltstones and coarse sand have bulk and pore-water resistivities ranging from 40.1–2049.4 Ω m (average = 995.18 Ω m to 2.7–256.9 Ω m (average = 91.2 Ω m respectively. These ranges respectively correspond to porosity and formation factor of (19.5–40.6%; average = 29.2% and (7.1–19.7%; average = 12.95%. Within the limit of experimental errors clearly specified in the work, the intrinsic (clay-free formation factor (Fi was estimated to be 16.34 while the intrinsic porosity and the conductivity of the pore-scale clay (σA were respectively estimated to be 20.4% and 3.2679 mS/m. Accounting for this conductivity magnitude of argillaceous bands from bulk conductivity (σb of aquifer sands makes the aquifer systems in the area to be consistent with Archie’s law that is valid only in clay-free sandy formation. The graphical deductions and contour distribution of parameters realised from data processing could be used to derive input parameters for contaminant migration modelling and to improve the

  3. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2006-06-15

    We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

    Directory of Open Access Journals (Sweden)

    Huazheng Sun

    2017-09-01

    Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

  5. Optical excitation processes in the near band-edge region of KAlSi3O8 and NaAlSi3O8 feldspar

    DEFF Research Database (Denmark)

    Poolton, N.R.J.; Mauz, B.; Lang, A.

    2006-01-01

    -stimulated phosphorescence and energy-dependent photo-transferred optically stimulated luminescence. The photo-transferred OSL confirms the bandgap energy of alkali feldspars to be 7.7eV at 10K, and highlights the role played by a dominant optically active defect 4.4 eV below the conduction band, associated with blue......)) yielding a characteristically narrow feature at 4.61 eV: significantly, excitation to this level allows photo-transferred OSL to take place, a process that is not obviously identifiable with the other transitions of the set. The conclusion of the work is that synchrotron-based luminescence methods can...

  6. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    International Nuclear Information System (INIS)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A; Martinez-Criado, G; Salome, M; Susini, J; Olguin, D; Dhar, S

    2009-01-01

    By means of x-ray absorption near-edge structure (XANES) several Ga 1-x Mn x N (0.03 2 ↑ band localized in the gap region, and the corresponding anti-bonding state t 2 ↓, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  7. The complex band structure for armchair graphene nanoribbons

    International Nuclear Information System (INIS)

    Zhang Liu-Jun; Xia Tong-Sheng

    2010-01-01

    Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N = 3M − 1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons, and is also classified into three classes

  8. [Road Extraction in Remote Sensing Images Based on Spectral and Edge Analysis].

    Science.gov (United States)

    Zhao, Wen-zhi; Luo, Li-qun; Guo, Zhou; Yue, Jun; Yu, Xue-ying; Liu, Hui; Wei, Jing

    2015-10-01

    Roads are typically man-made objects in urban areas. Road extraction from high-resolution images has important applications for urban planning and transportation development. However, due to the confusion of spectral characteristic, it is difficult to distinguish roads from other objects by merely using traditional classification methods that mainly depend on spectral information. Edge is an important feature for the identification of linear objects (e. g. , roads). The distribution patterns of edges vary greatly among different objects. It is crucial to merge edge statistical information into spectral ones. In this study, a new method that combines spectral information and edge statistical features has been proposed. First, edge detection is conducted by using self-adaptive mean-shift algorithm on the panchromatic band, which can greatly reduce pseudo-edges and noise effects. Then, edge statistical features are obtained from the edge statistical model, which measures the length and angle distribution of edges. Finally, by integrating the spectral and edge statistical features, SVM algorithm is used to classify the image and roads are ultimately extracted. A series of experiments are conducted and the results show that the overall accuracy of proposed method is 93% comparing with only 78% overall accuracy of the traditional. The results demonstrate that the proposed method is efficient and valuable for road extraction, especially on high-resolution images.

  9. Electrodynamics of the semiconductor band edge

    International Nuclear Information System (INIS)

    Stahl, A.; Balslev, I.

    1987-01-01

    The book is a presentation of an approach to electrodynamics in semiconductors. It describes in detail the coherence phenomena appearing when the electromagnetic wavelength, the electron-hole coherence length and the single-particle wavelength are of the same order of magnitude

  10. Edge Matters

    DEFF Research Database (Denmark)

    Earon, Ofri

    2013-01-01

    of this container is to separate inside from outside and to protect and provide privacy, psychological as well as physical (Venturi, 1966). But, if dwelling phenomenon takes place both inside and outside the private house – why is the urban house an enclosed box? What is the differentiation between inside...... and outside the contemporary urban house? And what is the interplay between them? The research argues for re-thinking the edge zone between inside and outside the urban house. Therefore, although, residential buildings in the city are the objects of study, the focal point here is the edge zone along...... the building. The research explores and develops the architectural characteristics of correlations between the resident, the singular unit, the building and the given location at the edge zone. It approaches the edge zone of the urban house as a platform for dynamic interactions between these behaviours...

  11. Highly Efficient Photocatalytic Water Splitting over Edge-Modified Phosphorene Nanoribbons.

    Science.gov (United States)

    Hu, Wei; Lin, Lin; Zhang, Ruiqi; Yang, Chao; Yang, Jinlong

    2017-11-01

    Two-dimensional phosphorene with desirable optoelectronic properties (ideal band gap, high carrier mobility, and strong visible light absorption) is a promising metal-free photocatalyst for water splitting. However, the band edge positions of the valence band maximum (VBM) and conduction band maximum (CBM) of phosphorene are higher than the redox potentials in photocatalytic water splitting reactions. Thus, phosphorene can only be used as the photocathode for hydrogen evolution reaction as a low-efficiency visible-light-driven photocatalyst for hydrogen production in solar water splitting cells. Here, we propose a new mechanism to improve the photocatalytic efficiency of phosphorene nanoribbons (PNRs) by modifying their edges for full reactions in photocatalytic water splitting. By employing first-principles density functional theory calculations, we find that pseudohalogen (CN and OCN) passivated PNRs not only show desired VBM and CBM band edge positions induced by edge electric dipole layer, but also possess intrinsic optoelectronic properties of phosphorene, for both water oxidation and hydrogen reduction in photocatalytic water splitting without using extra energy. Furthermore, our calculations also predict that the maximum energy conversion efficiency of heterojunction solar cells consisting of different edge-modified PNRs can be as high as 20% for photocatalytic water splitting.

  12. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  13. Nanoclay gelation approach toward improved dye-sensitized solar cell efficiencies: an investigation of charge transport and shift in the TiO2 conduction band.

    Science.gov (United States)

    Wang, Xiu; Kulkarni, Sneha A; Ito, Bruno Ieiri; Batabyal, Sudip K; Nonomura, Kazuteru; Wong, Chee Cheong; Grätzel, Michael; Mhaisalkar, Subodh G; Uchida, Satoshi

    2013-01-23

    Nanoclay minerals play a promising role as additives in the liquid electrolyte to form a gel electrolyte for quasi-solid-state dye-sensitized solar cells, because of the high chemical stability, unique swelling capability, ion exchange capacity, and rheological properties of nanoclays. Here, we report the improved performance of a quasi-solid-state gel electrolyte that is made from a liquid electrolyte and synthetic nitrate-hydrotalcite nanoclay. Charge transport mechanisms in the gel electrolyte and nanoclay interactions with TiO(2)/electrolyte interface are discussed in detail. The electrochemical analysis reveals that the charge transport is solely based on physical diffusion at the ratio of [PMII]:[I(2)] = 10:1 (where PMII is 1-propyl-3-methylimidazolium iodide). The calculated physical diffusion coefficient shows that the diffusion of redox ions is not affected much by the viscosity of nanoclay gel. The addition of nitrate-hydrotalcite clay in the electrolyte has the effect of buffering the protonation process at the TiO(2)/electrolyte interface, resulting in an upward shift in the conduction band and a boost in open-circuit voltage (V(OC)). Higher V(OC) values with undiminished photocurrent is achieved with nitrate-hydrotalcite nanoclay gel electrolyte for organic as well as for inorganic dye (D35 and N719) systems. The efficiency for hydrotalcite clay gel electrolyte solar cells is increased by 10%, compared to that of the liquid electrolyte. The power conversion efficiency can reach 10.1% under 0.25 sun and 9.6% under full sun. This study demonstrates that nitrate-hydrotalcite nanoclay in the electrolyte not only solidifies the liquid electrolyte to prevent solvent leakage, but also facilitates the improvement in cell efficiency.

  14. Edge modulation of electronics and transport properties of cliff-edge phosphorene nanoribbons

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-12-01

    Based on the first-principles calculations, we study the electronic structures and transport properties of cliff-like edge phosphorene nanoribbons (CPNRs), considering different types of edge passivation. The band structures of bare CPNRs possess the metallic features; while hydrogen (H), fluorine (F), chlorine (Cl) and oxygen (O) atoms-passivated CPNRs are semiconductor materials, and the band gap values monotonically decrease when the ribbon width increases. Moreover, the H and F-passivated CPNRs exhibit the direct band gap characteristics, while the Cl and O-passivated cases show the features of indirect band gap. In addition, the edge passivated CPNRs are more energetically stable than bare edge case. Meanwhile, our results also show that the transport properties of the CPNRs can be obviously influenced by the different edge passivation.

  15. Bulk band gaps in divalent hexaborides: A soft x-ray emission study

    International Nuclear Information System (INIS)

    Denlinger, Jonathan D.; Gweon, Gey-Hong; Allen, James W.; Bianchi, Andrea D.; Fisk, Zachary

    2001-01-01

    Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and consistent with surface-sensitive angle-resolved photoemission experiments, confirm the existence of a bulk band gap and the location of the chemical potential at the bottom of the conduction band

  16. Edge-functionalization of armchair graphene nanoribbons with pentagonal-hexagonal edge structures.

    Science.gov (United States)

    Ryou, Junga; Park, Jinwoo; Kim, Gunn; Hong, Suklyun

    2017-06-21

    Using density functional theory calculations, we have studied the edge-functionalization of armchair graphene nanoribbons (AGNRs) with pentagonal-hexagonal edge structures. While the AGNRs with pentagonal-hexagonal edge structures (labeled (5,6)-AGNRs) are metallic, the edge-functionalized (5,6)-AGNRs with substitutional atoms opens a band gap. We find that the band structures of edge-functionalized (5,6)-N-AGNRs by substitution resemble those of defect-free (N-1)-AGNR at the Γ point, whereas those at the X point show the original ones of the defect-free N-AGNR. The overall electronic structures of edge-functionalized (5,6)-AGNRs depend on the number of electrons, supplied by substitutional atoms, at the edges of functionalized (5,6)-AGNRs.

  17. Edge Detection,

    Science.gov (United States)

    1985-09-01

    PROJECT. T ASK0 Artificial Inteligence Laboratory AREA It WORK UNIT NUMBERS V 545 Technology Square ( Cambridge, HA 02139 I I* CONTOOL1LIN@4OFFICE NAME...ARD-A1t62 62 EDGE DETECTION(U) NASSACNUSETTS INST OF TECH CAMBRIDGE 1/1 ARTIFICIAL INTELLIGENCE LAB E C HILDRETH SEP 85 AI-M-8 N99SI4-8S-C-6595...used to carry out this analysis. cce~iO a N) ’.~" D LI’BL. P p ------------ Sj. t i MASSACHUSETTS INSTITUTE OF TECHNOLOGY i ARTIFICIAL INTELLIGENCE

  18. Nature of the fundamental band gap in GaNxP1-x alloys

    International Nuclear Information System (INIS)

    Shan, W.; Walukiewicz, W.; Yu, K. M.; Wu, J.; Ager, J. W. III; Haller, E. E.; Xin, H. P.; Tu, C. W.

    2000-01-01

    The optical properties of GaN x P 1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN x P 1-x at energy below the indirect Γ V -X C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN x P 1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. (c) 2000 American Institute of Physics

  19. The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

    Science.gov (United States)

    Zhou, Benliang; Zhou, Benhu; Liu, Pu; Zhou, Guanghui

    2018-01-01

    We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.

  20. Electronic band structure of magnetic bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

    2014-01-01

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  1. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  2. Living edge

    DEFF Research Database (Denmark)

    Earon, Ofri

    2014-01-01

    was originally introduced to enhance indoor qualities including light and view. Throughout the paper, it is argued that these ecological motives have grown to architectural and urban dimensions. The paper analyzes the characteristics and potentials of these dimensions and their interconnections. The paper...... on the ground level, but there is a lack of recognition in the significance of communicative characters as well at the higher part of the edge. The city’s planning approach is “Consider urban life before urban space. Consider urban space before buildings” This urban strategy neglects the possible architectural...... contribution to the street atmosphere and its effect on urban life. Bay balcony has been a common architectural element in Copenhagen’s residential buildings, since the end of the twenties. It is a domestic border with an architectural thickness combining window, door, windowsill and balcony. The bay balcony...

  3. High-energy band structure of gold

    DEFF Research Database (Denmark)

    Christensen, N. Egede

    1976-01-01

    The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...

  4. Mapping Catalytically Relevant Edge Electronic States of MoS2

    Science.gov (United States)

    2018-01-01

    Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity. PMID:29721532

  5. Edge-based correlation image registration for multispectral imaging

    Science.gov (United States)

    Nandy, Prabal [Albuquerque, NM

    2009-11-17

    Registration information for images of a common target obtained from a plurality of different spectral bands can be obtained by combining edge detection and phase correlation. The images are edge-filtered, and pairs of the edge-filtered images are then phase correlated to produce phase correlation images. The registration information can be determined based on these phase correlation images.

  6. Invariance of the mobility edge in anodic titanium oxides

    International Nuclear Information System (INIS)

    Tit, N.; Halley, J.W.; Shore, H.B.

    1992-05-01

    We present a theoretical investigation to explain the electronic and optical properties of anodic rutile TiO 2 thin films of different thicknesses (ranging from 5nm to 20nm). There is experimental evidence that the observed gap state at 0.7eV below the edge of conduction-band is due to an oxygen vacancy. For this reason, oxygen vacancies are used as defects in our model. A comparison of the calculated bulk-photoconductivity to photospectroscopy experiment reveals that the films have bulk-like transport properties with a bandgap E g =3.0eV. On the other hand, a fit of the surface density of states to the scanning tunneling microscopy (STM) experiment on the (001) surfaces has suggested a surface defect density of 5% of oxygen vacancies. To resolve this discrepancy, we calculated the dc-conductivity where localization effects are included. Our results show an impurity band formation at about p c =9% of oxygen vacancies. We concluded that the studied films have defect densities below the threshold of impurity band formation. As a consequence the gap states seen in STM are localized (i.e. the oxygen vacancies are playing the role of trapping centers, deep levels) and the mobility edge is invariant. (author). 11 refs, 3 figs

  7. Angular dependent XPS study of surface band bending on Ga-polar n-GaN

    Science.gov (United States)

    Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

    2018-05-01

    Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

  8. The electrical conductivity and energy band gap of ‘bunga belimbing buluh’/tio2 nanocrystals as hybrid solar cell

    Science.gov (United States)

    Kamarulzaman, N. H.; Salleh, H.; Ghazali, M. S. M.; Ghazali, S. M.; Ahmad, Z.

    2018-05-01

    This research intends to explore the effect of thickness of inorganic titania nanocrystals (TiO2 NCs) materials and Averrhoe bilimbi’s flower towards the electrical conductivity. Averrhoe bilimbi’s flower or also known as ‘bunga belimbing buluh’ was used for the first time as a natural dye in hybrid solar cells. The performance of electrical conductivity can be improved in bilayer heterojunction hybrid solar cell (HCS). The TiO2 NCs was deposited on the ITO substrate using Electrochemistry method at room temperature. The dye extracted from Averrhoe bilimbi’s flower was deposited on the top of TiO2 NCs layered using the same method. The electrical conductivity can be recorded using Four Point Probe (FPP) under dark and light radiation (range of 0 Wm-2 to 200Wm-2). From the results, electrical conductivity was increased by the increment light intensity and suitable for further solar cell fabrications.

  9. Hydrostatic pressure effects on the {gamma}-X conduction band mixing and the binding energy of a donor impurity in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62210, Cuernavaca (Mexico)

    2007-06-15

    Mixing between {gamma} and X valleys of the conduction band in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the {gamma}-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Impedance and a.c. conductivity studies on Ba(Nd0⋅2Ti0⋅6Nb0⋅2 ...

    Indian Academy of Sciences (India)

    Unknown

    ceramic prepared through conventional and microwave sintering route .... disorder due to the random distribution of B-site cations. (Nd+3, Ti+4, ... due to rapid cooling rates less time is available for reoxi- ... mental data for CS sample indicating the contribution from ... may be related to the change in conductivity mechanism.

  11. Broad-band conductivity and dielectric spectroscopy of composites of multiwalled carbon nanotubes and poly(ethylene terephthalate) around their low percolation threshold

    Czech Academy of Sciences Publication Activity Database

    Nuzhnyy, Dmitry; Savinov, Maxim; Bovtun, Viktor; Kempa, Martin; Petzelt, Jan; Mayoral, B.; McNally, T.

    2013-01-01

    Roč. 24, č. 5 (2013), "055707-1"-"055707-9" ISSN 0957-4484 R&D Projects: GA ČR GAP204/12/0232; GA MŠk LD12025 Institutional support: RVO:68378271 Keywords : THz and dielectric spectroscopy * multiwalled carbon nanotubes * electrical percolation threshold * fluctuation-induced tunneling conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.672, year: 2013 http://iopscience.iop.org/0957-4484/24/5/055707/

  12. Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron

    Directory of Open Access Journals (Sweden)

    Hong-Sub Lee

    2015-01-01

    Full Text Available Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

  13. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  14. Donor impurity-related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells: hydrostatic pressure and {gamma}-X conduction band mixing effects

    Energy Technology Data Exchange (ETDEWEB)

    Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, MOR (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Lopez, S.Y. [Fac. de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2007-07-01

    Using a variational procedure within the effective mass approximation, the mixing between the {gamma} and X conduction band valleys in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The effect of spin-orbit coupling in band structure of few-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Sahdan, Muhammad Fauzi, E-mail: sahdan89@yahoo.co.id; Darma, Yudi, E-mail: sahdan89@yahoo.co.id [Department of Physics, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2014-03-24

    Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

  16. Edge-Corrected Mean-Field Hubbard Model: Principle and Applications in 2D Materials

    Directory of Open Access Journals (Sweden)

    Xi Zhang

    2017-05-01

    Full Text Available This work reviews the current progress of tight-binding methods and the recent edge-modified mean-field Hubbard model. Undercoordinated atoms (atoms not fully coordinated exist at a high rate in nanomaterials with their impact overlooked. A quantum theory was proposed to calculate electronic structure of nanomaterials by incorporating bond order-length-strength (BOLS correlation to mean-field Hubbard model, i.e., BOLS-HM. Consistency between the BOLS-HM calculation and density functional theory (DFT calculation on 2D materials verified that (i bond contractions and potential well depression occur at the edge of graphene, phosphorene, and antimonene nanoribbons; (ii the physical origin of the band gap opening of graphene, phosphorene, and antimonene nanoribbons lays in the enhancement of edge potentials and hopping integrals due to the shorter and stronger bonds between undercoordinated atoms; (iii the band gap of 2D material nanoribbons expand as the width decreases due to the increasing under-coordination effects of edges which modulates the conductive behaviors; and (iv non-bond electrons at the edges and atomic vacancies of 2D material accompanied with the broken bond contribute to the Dirac-Fermi polaron (DFP with a local magnetic moment.

  17. Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

    International Nuclear Information System (INIS)

    Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

    2006-01-01

    Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Palomares, A. [Departamento de Matemática Aplicada, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

    2016-01-28

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  19. Determination of band structure parameters and the quasi-particle gap of CdSe quantum dots by cyclic voltammetry.

    Science.gov (United States)

    Inamdar, Shaukatali N; Ingole, Pravin P; Haram, Santosh K

    2008-12-01

    Band structure parameters such as the conduction band edge, the valence band edge and the quasi-particle gap of diffusing CdSe quantum dots (Q-dots) of various sizes were determined using cyclic voltammetry. These parameters are strongly dependent on the size of the Q-dots. The results obtained from voltammetric measurements are compared to spectroscopic and theoretical data. The fit obtained to the reported calculations based on the semi-empirical pseudopotential method (SEPM)-especially in the strong size-confinement region, is the best reported so far, according to our knowledge. For the smallest CdSe Q-dots, the difference between the quasi-particle gap and the optical band gap gives the electron-hole Coulombic interaction energy (J(e1,h1)). Interband states seen in the photoluminescence spectra were verified with cyclic voltammetry measurements.

  20. Magnetism of zigzag edge phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Zhili, E-mail: zlzhu@zzu.edu.cn, E-mail: jiayu@zzu.edu.cn; Li, Chong; Yu, Weiyang; Chang, Dahu; Sun, Qiang; Jia, Yu, E-mail: zlzhu@zzu.edu.cn, E-mail: jiayu@zzu.edu.cn [International Joint Research Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001 (China)

    2014-09-15

    We have investigated, by means of ab initio calculations, the electronic and magnetic structures of zigzag edge phosphorene nanoribbons (ZPNRs) with various widths. The stable magnetic state was found in pristine ZPNRs by allowing the systems to be spin-polarized. The ground state of pristine ZPNRs prefers ferromagnetic order in the same edge but antiferromagnetic order between two opposite edges. The magnetism arises from the dangling bond states as well as edge localized π-orbital states. The presence of a dangling bond is crucial to the formation of the magnetism of ZPNRs. The hydrogenated ZPNRs get nonmagnetic semiconductors with a direct band gap. While, the O-saturated ZPNRs show magnetic ground states due to the weak P-O bond in the ribbon plane between the p{sub z}-orbitals of the edge O and P atoms.

  1. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    International Nuclear Information System (INIS)

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  2. Blue shift of the plasma edge of a ferromagnetic semimetal

    International Nuclear Information System (INIS)

    Wachter, P.; Bommeli, F.; Degiorgi, L.; Burlet, P.; Bourdarot, F.

    1998-01-01

    Full text: In general rare earth pnictides are semimetals and antiferromagnets. Only some nitrides are quoted as ferri or ferromagnetic. However, it has been shown when prepared stoichiometrically and in single crystalline form the free carrier concentration is only in the percent per cation range, thus they are typical low carrier systems. Under these conditions the nitrides are all canted antiferromagnets and metamagnets, i.e. they show Abstract only. The full magnetic moment only with an applied magnetic field. However, when prepared as single crystals but with excess of the rare earths they become spontaneously ferromagnets due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in addition to the superexchange mechanisms. On such ferromagnetic compositions of TbN and GdN and also in EuB 6 a new magneto-optic effect has been discovered, a spontaneous blue shift of the plasma edge upon magnetic order. The plasma edge is measured with optical reflectivity and it depends on the free carrier concentration. In other words the free carrier concentration increases upon ferromagnetic order. This effect can be understood with the spontaneous exchange splitting of mainly the 5d conduction band, lowering the bottom of the spin up 5d band, thus increasing the indirect overlap with the valence p band of the anions and thus enhancing the carrier concentration. This blue shift of the plasma edge follows a spin correlation function. An external magnetic field applied near TC enhances the blue shift since the magnetization is not yet saturated. For T→0 a magnetic field has no effect since the magnetization is spontaneously saturated

  3. Even–odd effect on the edge states for zigzag phosphorene nanoribbons under a perpendicular electric field

    International Nuclear Information System (INIS)

    Zhou, Benliang; Zhou, Guanghui; Zhou, Benhu; Zhou, Xiaoying

    2017-01-01

    We study the variation of electronic property for zigzag-edge phosphorene nanoribbons (ZPNRs) under a perpendicular electric field (PEF). Using the tight-binding Hamiltonian combined with the surface lattice Green’s function (GF) approach, we show that the response of edge states to PEF for a N -ZPNR with even- or odd- N (number of zigzag chains) is qualitatively different. The field opens a gap between two edge bands near the Fermi energy for even- N ribbons, but for odd- N ones where the two edge bands are always nearly degenerated. This difference is originally from that the Stark-effect-induced energies at the upper and lower edges for even- and odd- N ZPNRs are different due to the peculiar lattice structure of phosphorene. In consequence, the electronic densities are more localized at the edges driven by the field for even- N ZPNRs but not for odd- N ones. This even–odd effect is also reflected in conductance, which indicates that the odd- N ZPNRs may be more suitable for the usage of field-effect transistor. (paper)

  4. Many-body effects in the mesoscopic x-ray edge problem

    International Nuclear Information System (INIS)

    Hentschel, Martina; Roeder, Georg; Ullmo, Denis

    2007-01-01

    Many-body phenomena, a key interest in the investigation of bulk solid state systems, are studied here in the context of the x-ray edge problem for mesoscopic systems. We investigate the many-body effects associated with the sudden perturbation following the x-ray exciton of a core electron into the conduction band. For small systems with dimensions at the nanoscale we find considerable deviations from the well-understood metallic case where Anderson orthogonality catastrophe and the Mahan-Nozieres-DeDominicis response cause characteristic deviations of the photoabsorption cross section from the naive expectation. Whereas the K-edge is typically rounded in metallic systems, we find a slightly peaked K-edge in generic mesoscopic systems with chaotic-coherent electron dynamics. Thus the behavior of the photoabsorption cross section at threshold depends on the system size and is different for the metallic and the mesoscopic case. (author)

  5. Effective Hamiltonian for protected edge states in graphene

    International Nuclear Information System (INIS)

    Winkler, R.; Deshpande, H.

    2017-01-01

    Edge states in topological insulators (TIs) disperse symmetrically about one of the time-reversal invariant momenta Λ in the Brillouin zone (BZ) with protected degeneracies at Λ. Commonly TIs are distinguished from trivial insulators by the values of one or multiple topological invariants that require an analysis of the bulk band structure across the BZ. We propose an effective two-band Hamiltonian for the electronic states in graphene based on a Taylor expansion of the tight-binding Hamiltonian about the time-reversal invariant M point at the edge of the BZ. This Hamiltonian provides a faithful description of the protected edge states for both zigzag and armchair ribbons, though the concept of a BZ is not part of such an effective model. In conclusion, we show that the edge states are determined by a band inversion in both reciprocal and real space, which allows one to select Λ for the edge states without affecting the bulk spectrum.

  6. Conduction bands in classical periodic potentials

    Indian Academy of Sciences (India)

    The energy of a quantum particle cannot be determined exactly unless there is an infinite amount of time to perform the measurement. This paper considers the possibility that , the uncertainty in the energy, may be complex. To understand the effect of a particle having a complex energy, the behaviour of a classical ...

  7. Conduction bands in classical periodic potentials

    Indian Academy of Sciences (India)

    is an infinite amount of time to perform the measurement. This paper ... the observation that when the energy is real, the classical trajectories in the com- plex plane are .... Figure 4 shows that the particle can travel smoothly from one well to the ...

  8. Power spectrum weighted edge analysis for straight edge detection in images

    Science.gov (United States)

    Karvir, Hrishikesh V.; Skipper, Julie A.

    2007-04-01

    Most man-made objects provide characteristic straight line edges and, therefore, edge extraction is a commonly used target detection tool. However, noisy images often yield broken edges that lead to missed detections, and extraneous edges that may contribute to false target detections. We present a sliding-block approach for target detection using weighted power spectral analysis. In general, straight line edges appearing at a given frequency are represented as a peak in the Fourier domain at a radius corresponding to that frequency, and a direction corresponding to the orientation of the edges in the spatial domain. Knowing the edge width and spacing between the edges, a band-pass filter is designed to extract the Fourier peaks corresponding to the target edges and suppress image noise. These peaks are then detected by amplitude thresholding. The frequency band width and the subsequent spatial filter mask size are variable parameters to facilitate detection of target objects of different sizes under known imaging geometries. Many military objects, such as trucks, tanks and missile launchers, produce definite signatures with parallel lines and the algorithm proves to be ideal for detecting such objects. Moreover, shadow-casting objects generally provide sharp edges and are readily detected. The block operation procedure offers advantages of significant reduction in noise influence, improved edge detection, faster processing speed and versatility to detect diverse objects of different sizes in the image. With Scud missile launcher replicas as target objects, the method has been successfully tested on terrain board test images under different backgrounds, illumination and imaging geometries with cameras of differing spatial resolution and bit-depth.

  9. Stability of edge states and edge magnetism in graphene nanoribbons

    OpenAIRE

    Kunstmann, Jens; Özdoğan, Cem; Quandt, Alexander; Fehske, Holger

    2010-01-01

    We critically discuss the stability of edge states and edge magnetism in zigzag edge graphene nanoribbons (ZGNRs). We point out that magnetic edge states might not exist in real systems, and show that there are at least three very natural mechanisms - edge reconstruction, edge passivation, and edge closure - which dramatically reduce the effect of edge states in ZGNRs or even totally eliminate them. Even if systems with magnetic edge states could be made, the intrinsic magnetism would not be ...

  10. Nanoindentation near the edge

    Science.gov (United States)

    J.E. Jakes; C.R. Frihart; J.F. Beecher; R.J. Moon; P.J. Resto; Z.H. Melgarejo; O.M. Saurez; H. Baumgart; A.A. Elmustafa; D.S. Stone

    2009-01-01

    Whenever a nanoindent is placed near an edge, such as the free edge of the specimen or heterophase interface intersecting the surface, the elastic discontinuity associated with the edge produces artifacts in the load-depth data. Unless properly handled in the data analysis, the artifacts can produce spurious results that obscure any real trends in properties as...

  11. Protected Edge Modes without Symmetry

    Directory of Open Access Journals (Sweden)

    Michael Levin

    2013-05-01

    Full Text Available We discuss the question of when a gapped two-dimensional electron system without any symmetry has a protected gapless edge mode. While it is well known that systems with a nonzero thermal Hall conductance, K_{H}≠0, support such modes, here we show that robust modes can also occur when K_{H}=0—if the system has quasiparticles with fractional statistics. We show that some types of fractional statistics are compatible with a gapped edge, while others are fundamentally incompatible. More generally, we give a criterion for when an electron system with Abelian statistics and K_{H}=0 can support a gapped edge: We show that a gapped edge is possible if and only if there exists a subset of quasiparticle types M such that (1 all the quasiparticles in M have trivial mutual statistics, and (2 every quasiparticle that is not in M has nontrivial mutual statistics with at least one quasiparticle in M. We derive this criterion using three different approaches: a microscopic analysis of the edge, a general argument based on braiding statistics, and finally a conformal field theory approach that uses constraints from modular invariance. We also discuss the analogous result for two-dimensional boson systems.

  12. The marginal band system in nymphalid butterfly wings.

    Science.gov (United States)

    Taira, Wataru; Kinjo, Seira; Otaki, Joji M

    2015-01-01

    Butterfly wing color patterns are highly complex and diverse, but they are believed to be derived from the nymphalid groundplan, which is composed of several color pattern systems. Among these pattern systems, the marginal band system, including marginal and submarginal bands, has rarely been studied. Here, we examined the color pattern diversity of the marginal band system among nymphalid butterflies. Marginal and submarginal bands are usually expressed as a pair of linear bands aligned with the wing margin. However, a submarginal band can be expressed as a broken band, an elongated oval, or a single dot. The marginal focus, usually a white dot at the middle of a wing compartment along the wing edge, corresponds to the pupal edge spot, one of the pupal cuticle spots that signify the locations of color pattern organizing centers. A marginal band can be expressed as a semicircle, an elongated oval, or a pair of eyespot-like structures, which suggest the organizing activity of the marginal focus. Physical damage at the pupal edge spot leads to distal dislocation of the submarginal band in Junonia almana and in Vanessa indica, suggesting that the marginal focus functions as an organizing center for the marginal band system. Taken together, we conclude that the marginal band system is developmentally equivalent to other symmetry systems. Additionally, the marginal band is likely a core element and the submarginal band a paracore element of the marginal band system, and both bands are primarily specified by the marginal focus organizing center.

  13. Unconventional quantized edge transport in the presence of inter-edge coupling in intercalated graphene

    OpenAIRE

    Li, Yuanchang

    2016-01-01

    It is generally believed that the inter-edge coupling destroys the quantum spin Hall (QSH) effect along with the gap opening at the Dirac points. Using first-principles calculations, we find that the quantized edge transport persists in the presence of inter-edge coupling in Ta intercalated epitaxial graphene on SiC(0001), being a QSH insulator with the non-trivial gap of 81 meV. In this case, the band is characterized by two perfect Dirac cones with different Fermi velocities, yet only one m...

  14. Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures

    International Nuclear Information System (INIS)

    Yang, M.; Sturm, J.C.; Prevost, J.

    1997-01-01

    The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical Si 1-x Ge x particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the Si 1-x Ge x inclusion, respectively. Band lineups and the lowest electron endash heavy-hole transition energies of a pseudomorphic V-groove Si 1-x Ge x quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large Si 1-x Ge x V-groove structure on Si will be lower than those of conventional 2D strained Si 1-x Ge x for similar Ge contents. copyright 1997 The American Physical Society

  15. Tunable magnetic states on the zigzag edges of hydrogenated and halogenated group-IV nanoribbons

    Science.gov (United States)

    Chuang, Feng-Chuan; Wang, Tzu-Cheng; Hsu, Chia-Hsiu; Huang, Zhi-Quan; Su, Wan-Sheng; Guo, Guang-Yu

    The magnetic and electronic properties of hydrogenated and halogenated group-IV zigzag nanoribbons (ZNRs) are investigated by first-principles density functional calculations. Fascinatingly, we find that all the ZNRs have magnetic edges with a rich variety of electronic and magnetic properties tunable by selecting the parent and passivating elements as well as controlling the magnetization direction and external strain. In particular, the electric property of the edge band structure can be tuned from the conducting to insulating with a band gap up to 0.7 eV, depending on the parent and passivating elements as well as the applied strain, magnetic configuration and magnetization orientation. The last controllability would allow us to develop magnetic on-off nano-switches. Furthermore, ZNRs such as SiI, Ge, GeI and SnH, have fully spin-polarized metallic edge states and thus are promising materials for spintronics. The calculated magnetocrystalline anisotropy energy can be as large as 9 meV/edge-site, being 2000 time greater than that of bulk Ni and Fe ( 5 μeV/atom), and thus has great potential for high density magneto-electric data-storage devices. Finally, the calculated exchange coupling strength and thus magnetic transition temperature increases as the applied strain goes from -5 % to 5 %. Our findings thus show that these ZNRs would have exciting applications in next-generation electronic and spintronic nano-devices.

  16. Enhancement of dye-sensitized solar cells performances by improving electron density in conduction band of nanostructure TiO2 electrode with using a metalloporphyrin as additional dye

    International Nuclear Information System (INIS)

    Mojiri-Foroushani, M.; Dehghani, H.; Salehi-Vanani, N.

    2013-01-01

    Highlights: ► N719 and ZnTCPP dyes were used in a sequential adsorption process. ► By using two dyes, improved the performance of the cell. ► Density of electrons in the conduction band of TiO 2 electrodes improved. -- Abstract: A zinc(II)-porphyrin dye with four carboxyphenyl moiety of ancillary (ZnTCPP) was studied as a sensitizer in combination with a ruthenium complex (N719) in co-sensitized solar cells. The high molar extinction coefficient (ε) of porphyrin dyes leads to high light absorption in the dye-sensitized TiO 2 electrode. In spite of the high ε of porphyrin dyes, they usually have a narrow absorption band and also to suffer from dye aggregation due to their planar structural nature. This causes lower efficiencies of the DSSCs for the porphyrins than the ruthenium complexes. Co-sensitization of two or more dyes with complementary absorption spectra on TiO 2 film is an important method to further enhance the IPCE response and energy conversion efficiency of dye-sensitized solar cells. Interestingly, when the ZnTCPP electrode was used to assemble a co-sensitized solar cell by additional adsorption of N719 dye, the efficiency improved to 6.35% (in comparison to N719 that the efficiency was 4.74%). The results indicated that the co-sensitized device shows enhancements of photovoltaic performance not only in short-circuit current density (J SC ) but also in open-circuit voltage (V OC ). In the present study we have been shown that co-sensitization of a zinc(II)-porphyrin with N719 dye changes the energy levels of the TiO 2 electrode and in result produces further improvement for its device performance

  17. Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

    Science.gov (United States)

    Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

    2017-12-01

    The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

  18. Bulk and edge spin transport in topological magnon insulators

    NARCIS (Netherlands)

    Rückriegel, A.; Brataas, A.; Duine, R.A.

    2018-01-01

    We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin

  19. An edge pedestal model

    International Nuclear Information System (INIS)

    Stacev, W.M.

    2001-01-01

    A new model for calculation of the gradient scale lengths in the edge pedestal region and of the edge transport barrier width in H-mode tokamak plasmas will be described. Model problem calculations which demonstrate the promise of this model for predicting experimental pedestal properties will be discussed. The density and Prague gradient scale lengths (L) in the edge are calculated from the particle and ion and electron energy radial transport equations, making use of (presumed) known particle and energy fluxes flowing across the edge transport barrier from the core into the SOL and of edge transport coefficients. The average values of the particle and heat fluxes in the edge transport barrier are calculated in terms of the fluxes crossing into the SOL and the atomic physics reaction rates (ionisation, charge-exchange, elastic scattering, impurity radiation) in the edge by integrating the respective transport equations from the pedestal to the separatrix. An important implication of this model is that the pedestal gradient scale lengths depend not just on local pedestal platers properties but also on particle and energy fluxes from the core plasma and on recycling neutral fluxes that penetrate into the plasma edge, both of which in turn depend on the pedestal properties. The MHD edge pressure gradient constraint α≤ α C is used to determine the pressure width of the edge transport barrier, Δ TB = Δ TB (α c ). Three different models for the MHD edge pressure gradient constraint have been investigated: (1) nominal ideal ballooning mode theory, (2) ballooning mode theory taking into account the edge geometry and shear to access He second stability region; and pedestal β-limit theory when the ballooning modes are stabilised by diamagnetic effects. A series of calculations have been made for a DIII-D model problem. The calculated gradient scale lengths and edge transport barrier widths are of the magnitude of values observed experimentally, and certain trends

  20. The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors

    Science.gov (United States)

    Sant, S.; Schenk, A.

    2017-10-01

    It is demonstrated how band tail states in the semiconductor influence the performance of a Tunnel Field Effect Transistor (TFET). As a consequence of the smoothened density of states (DOS) around the band edges, the energetic overlap of conduction and valence band states occurs gradually at the onset of band-to-band tunneling (BTBT), thus degrading the sub-threshold swing (SS) of the TFET. The effect of the band tail states on the current-voltage characteristics is modelled quantum-mechanically based on the idea of zero-phonon trap-assisted tunneling between band and tail states. The latter are assumed to arise from a 3-dimensional pseudo-delta potential proposed by Vinogradov [1]. This model potential allows the derivation of analytical expressions for the generation rate covering the whole range from very strong to very weak localization of the tail states. Comparison with direct BTBT in the one-band effective mass approximation reveals the essential features of tail-to-band tunneling. Furthermore, an analytical solution for the problem of tunneling from continuum states of the disturbed DOS to states in the opposite band is found, and the differences to direct BTBT are worked out. Based on the analytical expressions, a semi-classical model is implemented in a commercial device simulator which involves numerical integration along the tunnel paths. The impact of the tail states on the device performance is analyzed for a nanowire Gate-All-Around TFET. The simulations show that tail states notably impact the transfer characteristics of a TFET. It is found that exponentially decaying band tails result in a stronger degradation of the SS than tail states with a Gaussian decay of their density. The developed model allows more realistic simulations of TFETs including their non-idealities.

  1. A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

    Science.gov (United States)

    Linderälv, Christopher; Lindman, Anders; Erhart, Paul

    2018-01-04

    Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

  2. Strain-activated edge reconstruction of graphene nanoribbons

    KAUST Repository

    Cheng, Yingchun

    2012-02-17

    The edge structure and width of graphene nanoribbons (GNRs) are crucial factors for the electronic properties. A combination of experiment and first-principles calculations allows us to determine the mechanism of the hexagon-hexagon to pentagon-heptagon transformation. GNRs thinner than 2 nm have been fabricated by bombardment of graphene with high-energetic Au clusters. The edges of the GNRs are modified in situ by electron irradiation. Tensile strain along the edge decreases the transformation energy barrier. Antiferromagnetism and a direct band gap are found for a zigzag GNR, while a fully reconstructed GNR shows an indirect band gap. A GNR reconstructed on only one edge exhibits ferromagnetism. We propose that strain is an effective method to tune the edge and, therefore, the electronic structure of thin GNRs for graphene-based electronics.

  3. Strain-activated edge reconstruction of graphene nanoribbons

    KAUST Repository

    Cheng, Yingchun; Han, Yu; Schwingenschlö gl, Udo; Wang, H. T.; Zhang, Xixiang; Zhu, Y. H.; Zhu, Zhiyong

    2012-01-01

    The edge structure and width of graphene nanoribbons (GNRs) are crucial factors for the electronic properties. A combination of experiment and first-principles calculations allows us to determine the mechanism of the hexagon-hexagon to pentagon-heptagon transformation. GNRs thinner than 2 nm have been fabricated by bombardment of graphene with high-energetic Au clusters. The edges of the GNRs are modified in situ by electron irradiation. Tensile strain along the edge decreases the transformation energy barrier. Antiferromagnetism and a direct band gap are found for a zigzag GNR, while a fully reconstructed GNR shows an indirect band gap. A GNR reconstructed on only one edge exhibits ferromagnetism. We propose that strain is an effective method to tune the edge and, therefore, the electronic structure of thin GNRs for graphene-based electronics.

  4. Influence of a falling edge on high power microwave pulse combination

    Science.gov (United States)

    Li, Jiawei; Huang, Wenhua; Zhu, Qi; Xiao, Renzhen; Shao, Hao

    2016-07-01

    This paper presents an explanation of the influence of a microwave falling edge on high-power microwave pulse combination. Through particle-in-cell simulations, we discover that the falling edge is the driving factor that limits the output power of the combined pulses. We demonstrate that the space charge field, which accumulates to become comparable to the E-field at the falling edge of the former pulse, will trap the electrons in the gas layer and decrease its energy to attain a high ionization rate. Hence, avalanche discharge, caused by trapped electrons, makes the plasma density to approach the critical density and cuts off the latter microwave pulse. An X-band combination experiment is conducted with different pulse intervals. This experiment confirms that the high density plasma induced by the falling edge can cut off the latter pulse, and that the time required for plasma recombination in the transmission channel is several microseconds. To ensure a high output power for combined pulses, the latter pulse should be moved ahead of the falling edge of the former one, and consequently, a beat wave with high peak power becomes the output by adding two pulses with normal amplitudes.

  5. Doping and bond length contributions to Mn K-edge shift in La1 ...

    Indian Academy of Sciences (India)

    ... corresponds to the shift in the center of gravity of the unoccupied Mn 4-band contributing to the Mn K-absorption edge region. This correspondence is then used to separate the doping and size contributions to the edge shift due to variation in the number of electrons in valence band and Mn-O bond lengths, respectively, ...

  6. Two-dimensionally confined topological edge states in photonic crystals

    International Nuclear Information System (INIS)

    Barik, Sabyasachi; Miyake, Hirokazu; DeGottardi, Wade; Waks, Edo; Hafezi, Mohammad

    2016-01-01

    We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three-dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters. (paper)

  7. Bulk Versus Edge in the Quantum Hall Effect

    OpenAIRE

    Kao, Y. -C.; Lee, D. -H.

    1996-01-01

    The manifestation of the bulk quantum Hall effect on edge is the chiral anomaly. The chiral anomaly {\\it is} the underlying principle of the ``edge approach'' of quantum Hall effect. In that approach, $\\sxy$ should not be taken as the conductance derived from the space-local current-current correlation function of the pure one-dimensional edge problem.

  8. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  9. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  10. Density Functional Theory Calculation of the Band Alignment of (101̅0) In(x)Ga(1-x)N/Water Interfaces.

    Science.gov (United States)

    Meng, Andrew C; Cheng, Jun; Sprik, Michiel

    2016-03-03

    Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

  11. Determinação de diagramas de bandas de energia e da borda de absorção em SnO2, depositado via sol-gel, sobre quartzo Determination of the band energy diagram and absorption fundamental edge in SnO2, deposited via sol-gel, on quartz

    Directory of Open Access Journals (Sweden)

    E. A. Floriano

    2009-03-01

    Full Text Available Propriedades ópticas e estruturais de filmes finos de SnO2, depositados sobre substratos de quartzo, são apresentadas. Os filmes são preparados pela técnica de molhamento via sol-gel. Uma avaliação das propriedades eletrônicas do cristal (bulk e das superfícies (110 e (101 do material é também efetuada, através de cálculos baseados em um método mecânico-quântico que utiliza a Teoria do Funcional da Densidade (DFT em conjunto com o funcional hibrido B3LYP. A borda fundamental de absorção, obtida experimentalmente, é então comparada com os diagramas de bandas de energia do bulk e superfícies (110 e (101, calculadas.Optical and structural properties of SnO2 thin films, deposited on quartz substrates, are presented. Films are prepared by the sol-gel-dip-coating technique. An evaluation of the electronic properties of bulk and surfaces (110 and (101 of the material is also carried out, through calculation based on a quantum-mechanical method using the Density Functional Theory (DFT in conjunction with the hybrid functional B3LYP. The absorption fundamental edge, experimentally obtained, is compared to the calculated band energy diagram of bulk and surfaces (110 and (101.

  12. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    Science.gov (United States)

    Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  13. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    International Nuclear Information System (INIS)

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-01-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  14. Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

    International Nuclear Information System (INIS)

    Yang, G.; Lee, S.; Furdyna, J. K.

    2000-01-01

    This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

  15. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  16. Topological edge modes in multilayer graphene systems

    KAUST Repository

    Ge, Lixin

    2015-08-10

    Plasmons can be supported on graphene sheets as the Dirac electrons oscillate collectively. A tight-binding model for graphene plasmons is a good description as the field confinement in the normal direction is strong. With this model, the topological properties of plasmonic bands in multilayer graphene systems are investigated. The Zak phases of periodic graphene sheet arrays are obtained for different configurations. Analogous to Su-Schrieffer-Heeger (SSH) model in electronic systems, topological edge plasmon modes emerge when two periodic graphene sheet arrays with different Zak phases are connected. Interestingly, the dispersion of these topological edge modes is the same as that in the monolayer graphene and is invariant as the geometric parameters of the structure such as the separation and period change. These plasmonic edge states in multilayer graphene systems can be further tuned by electrical gating or chemical doping. © 2015 Optical Society of America.

  17. Floquet edge states in germanene nanoribbons

    KAUST Repository

    Tahir, Muhammad

    2016-08-23

    We theoretically demonstrate versatile electronic properties of germanene monolayers under circularly, linearly, and elliptically polarized light. We show for the high frequency regime that the edge states can be controlled by tuning the amplitude of the light and by applying a static electric field. For circularly polarized light the band gap in one valley is reduced and in the other enhanced, enabling single valley edge states. For linearly polarized light spin-split states are found for both valleys, being connected by time reversal symmetry. The effects of elliptically polarized light are similar to those of circularly polarized light. The transport properties of zigzag nanoribbons in the presence of disorder confirm a nontrivial nature of the edge states under circularly and elliptically polarized light.

  18. Edge effects in composites

    International Nuclear Information System (INIS)

    Guz, A.N.; Kokhanenko, Yu.V.

    1995-01-01

    In the present article we survey papers on edge effects investigated by the rigorous approach. We interpret edge effects as stressed states created in a composite as a result of zones in which the stresses exhibit a rapidly changing behavior in comparison with the slow variation of the stresses outside such zones. Here the range of the edge effect is defined as the distance from the point of its inception to the boundary of the edge zone in a given direction. The transition of the stresses to the slowly varying state is determined within prescribed error limits. The size and configuration of the edge zone depends on the tolerated error. Clearly, the main difficulty associated with the rigorous approach is finding solutions of the elasticity problems. The finite-difference approach is suggested for the approximate solution of these problems. In light of the comparative time consumption of the finite-difference approach, it is best directed at certain classes of problems rather than at particular individual problems. Not too many papers on the investigation of edge effects by the rigorous approach have been published to date. Below, following in their footsteps, we formulate edge effect problems in composites, determine classes of problems, and investigate edge effects in composite materials and structural elements using them in Cartesian (planar and three-dimensional problems) and cylindrical (axisymmetric problems) coordinate frames. We note that the division of approaches to the study of edge effects into qualitative (nonrigorous) and quantitative (rigorous) reflects the authors own point of view. Of course, other schemes of classification of the approaches to the investigation of the regions of rapidly varying states in composites are possible

  19. Edge colouring by total labellings

    DEFF Research Database (Denmark)

    Brandt, Stephan; Rautenbach, D.; Stiebitz, M.

    2010-01-01

    We introduce the concept of an edge-colouring total k-labelling. This is a labelling of the vertices and the edges of a graph G with labels 1, 2, ..., k such that the weights of the edges define a proper edge colouring of G. Here the weight of an edge is the sum of its label and the labels of its...

  20. Absolute band structure determination on naturally occurring rutile with complex chemistry: Implications for mineral photocatalysis on both Earth and Mars

    Science.gov (United States)

    Li, Yan; Xu, Xiaoming; Li, Yanzhang; Ding, Cong; Wu, Jing; Lu, Anhuai; Ding, Hongrui; Qin, Shan; Wang, Changqiu

    2018-05-01

    Rutile is the most common and stable form of TiO2 that ubiquitously existing on Earth and other terrestrial planets like Mars. Semiconducting mineral such as rutile-based photoredox reactions have been considered to play important roles in geological times. However, due to the inherent complexity in chemistry, the precision determination on band structure of natural rutile and the theoretical explanation on its solar-driven photochemistry have been hardly seen yet. Considering the multiple minor and trace elements in natural rutile, we firstly obtained the single-crystal crystallography, mineralogical composition and defects characteristic of the rutile sample by using both powder and single crystal X-ray diffraction, electron microprobe analysis and X-ray photoelectron spectroscopy. Then, the band gap was accurately determined by synchrotron-based O K-edge X-ray absorption and emission spectra, which was firstly applied to natural rutile due to its robustness on compositions and defects. The absolute band edges of the rutile sample was calculated by considering the electronegativity of the atoms, band gap and point of zero charge. Besides, after detecting the defect energy levels by photoluminescence spectra, we drew the schematic band structure of natural rutile. The band gap (2.7 eV) of natural rutile was narrower than that of synthetic rutile (3.0 eV), and the conduction and valence band edges of natural rutile at pH = pHPZC were determined to be -0.04 V and 2.66 V (vs. NHE), respectively. The defect energy levels located at nearly the middle position of the forbidden band. Further, we used theoretical calculations to verify the isomorphous substitution of Fe and V for Ti gave rise to the distortion of TiO6 octahedron and created vacancy defects in natural rutile. Based on density functional theory, the narrowed band gap was interpreted to the contribution of Fe-3d and V-3d orbits, and the defect energy state was formed by hybridization of O-2p and Fe/V/Ti-3d

  1. Adobe Edge Quickstart Guide

    CERN Document Server

    Labrecque, Joseph

    2012-01-01

    Adobe Edge Quickstart Guide is a practical guide on creating engaging content for the Web with Adobe's newest HTML5 tool. By taking a chapter-by-chapter look at each major aspect of Adobe Edge, the book lets you digest the available features in small, easily understandable chunks, allowing you to start using Adobe Edge for your web design needs immediately. If you are interested in creating engaging motion and interactive compositions using web standards with professional tooling, then this book is for you. Those with a background in Flash Professional wanting to get started quickly with Adobe

  2. Adobe Edge Preview 3

    CERN Document Server

    Grover, Chris

    2011-01-01

    Want to use an Adobe tool to design animated web graphics that work on iPhone and iPad? You've come to the right book. Adobe Edge Preview 3: The Missing Manual shows you how to build HTML5 graphics using simple visual tools. No programming experience? No problem. Adobe Edge writes the underlying code for you. With this eBook, you'll be designing great-looking web elements in no time. Get to know the workspace. Learn how Adobe Edge Preview 3 performs its magic.Create and import graphics. Make drawings with Edge's tools, or use art you designed in other programs.Work with text. Build menus, lab

  3. Pavement edge treatment.

    Science.gov (United States)

    2013-01-01

    Four projects were built over two construction seasons using special devices attached to the paving machine that produces a 30 slope on the outside pavement edge instead of the near vertical drop-off common with conventional paving equipment. This ...

  4. Edge Simulation Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Krasheninnikov, Sergei I. [Univ. of California, San Diego, CA (United States); Angus, Justin [Univ. of California, San Diego, CA (United States); Lee, Wonjae [Univ. of California, San Diego, CA (United States)

    2018-01-05

    The goal of the Edge Simulation Laboratory (ESL) multi-institutional project is to advance scientific understanding of the edge plasma region of magnetic fusion devices via a coordinated effort utilizing modern computing resources, advanced algorithms, and ongoing theoretical development. The UCSD team was involved in the development of the COGENT code for kinetic studies across a magnetic separatrix. This work included a kinetic treatment of electrons and multiple ion species (impurities) and accurate collision operators.

  5. Role of edges in the electronic and magnetic structures of nanographene

    International Nuclear Information System (INIS)

    Enoki, Toshiaki

    2012-01-01

    In graphene edges or nanographene, the presence of edges strongly affects the electronic structure depending on their edge shape (zigzag and armchair edges) as observed with the electron wave interference and the creation of non-bonding π-electron state (edge state). We investigate the edge-inherent electronic features and the magnetic properties of edge-sate spins in nanographene/graphene edges. Graphene nanostructures are fabricated by heat-induced conversion/fabrication of nanodiamond particles/graphite step edges; single-layer nanographene islands (mean size 10 nm) and armchair-edged nanographene ribbons (width 8 nm). Scanning tunneling microscopy (STM)/scanning tunneling spectroscopy observations demonstrate that edge states are created in zigzag edges in spite of the absence of such states in armchair edges. In addition, zigzag edges tend to be short and defective, whereas armchair edges are long and continuous in general. These findings suggest that a zigzag edge has lower aromatic stability than an armchair edge, consistent with Clar's aromatic sextet rule. The manner in which electron wave scattering takes place is different between zigzag and armchair edges. In the vicinity of an armchair edge, a honeycomb superlattice is observed in STM images together with a fine structure of threefold symmetry, in spite of the (√3×√3 )R30 o superlattice at a zigzag edge. The honeycomb lattice is a consequence of the intervalley K-K' transition that accompanies the electron wave interference taking place at the armchair edge. The Raman G-band is also affected by the interference, showing polarization angle dependence specifically at armchair edges. The magnetism of a three-dimensional disordered network of nanographene sheets is understood on the basis of the ferrimagnetic structure of the edge-state spins in individual constituent nanographene sheets. The strengthening of the inter-nanographene-sheet magnetic interaction brings about a spin glass state.

  6. Complex band structure and electronic transmission eigenchannels

    DEFF Research Database (Denmark)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

    2017-01-01

    and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

  7. Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

    KAUST Repository

    Upadhyay Kahaly, M.

    2011-09-20

    We study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.

  8. Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges

    Science.gov (United States)

    Wu, Shuang; Liu, Bing; Shen, Cheng; Li, Si; Huang, Xiaochun; Lu, Xiaobo; Chen, Peng; Wang, Guole; Wang, Duoming; Liao, Mengzhou; Zhang, Jing; Zhang, Tingting; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Watanabe, Kenji; Taniguchi, Takashi; Yao, Yugui; Wang, Weihua; Zhang, Guangyu

    2018-05-01

    The determination of the electronic structure by edge geometry is unique to graphene. In theory, an evanescent nonchiral edge state is predicted at the zigzag edges of graphene. Up to now, the approach used to study zigzag-edged graphene has mostly been limited to scanning tunneling microscopy. The transport properties have not been revealed. Recent advances in hydrogen plasma-assisted "top-down" fabrication of zigzag-edged graphene nanoribbons (Z-GNRs) have allowed us to investigate edge-related transport properties. In this Letter, we report the magnetotransport properties of Z-GNRs down to ˜70 nm wide on an h -BN substrate. In the quantum Hall effect regime, a prominent conductance peak is observed at Landau ν =0 , which is absent in GNRs with nonzigzag edges. The conductance peak persists under perpendicular magnetic fields and low temperatures. At a zero magnetic field, a nonlocal voltage signal, evidenced by edge conduction, is detected. These prominent transport features are closely related to the observable density of states at the hydrogen-etched zigzag edge of graphene probed by scanning tunneling spectroscopy, which qualitatively matches the theoretically predicted electronic structure for zigzag-edged graphene. Our study gives important insights for the design of new edge-related electronic devices.

  9. X-ray absorption near-edge structure in alpha-quartz and stishovite: Ab initio calculation with core - hole interaction

    International Nuclear Information System (INIS)

    Mo, Shang-Di; Ching, W. Y.

    2001-01-01

    Ab initio calculation of the XANSE/ELNES spectra for α quartz and stishovite were carried out using a large-supercell approach that includes the electron - core - hole interaction. Excellent agreements with experimental spectra were obtained for Si - K, Si - L 2,3 , and O - K edges. The usual interpretation using orbital-resolved local density of states in the conduction band is unsatisfactory. [copyright] 2001 American Institute of Physics

  10. Green's function asymptotics near the internal edges of spectra of periodic elliptic operators. Spectral edge case

    KAUST Repository

    Kuchment, Peter

    2012-06-21

    Precise asymptotics known for the Green\\'s function of the Laplace operator have found their analogs for periodic elliptic operators of the second order at and below the bottom of the spectrum. Due to the band-gap structure of the spectra of such operators, the question arises whether similar results can be obtained near or at the edges of spectral gaps. As the result of this work shows, this is possible at a spectral edge when the dimension d ≥ 3. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Green's function asymptotics near the internal edges of spectra of periodic elliptic operators. Spectral edge case

    KAUST Repository

    Kuchment, Peter; Raich, Andrew

    2012-01-01

    Precise asymptotics known for the Green's function of the Laplace operator have found their analogs for periodic elliptic operators of the second order at and below the bottom of the spectrum. Due to the band-gap structure of the spectra of such operators, the question arises whether similar results can be obtained near or at the edges of spectral gaps. As the result of this work shows, this is possible at a spectral edge when the dimension d ≥ 3. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B [IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

    2011-06-20

    Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

  13. The Edge supersonic transport

    Science.gov (United States)

    Agosta, Roxana; Bilbija, Dushan; Deutsch, Marc; Gallant, David; Rose, Don; Shreve, Gene; Smario, David; Suffredini, Brian

    1992-01-01

    As intercontinental business and tourism volumes continue their rapid expansion, the need to reduce travel times becomes increasingly acute. The Edge Supersonic Transport Aircraft is designed to meet this demand by the year 2015. With a maximum range of 5750 nm, a payload of 294 passengers and a cruising speed of M = 2.4, The Edge will cut current international flight durations in half, while maintaining competitive first class, business class, and economy class comfort levels. Moreover, this transport will render a minimal impact upon the environment, and will meet all Federal Aviation Administration Part 36, Stage III noise requirements. The cornerstone of The Edge's superior flight performance is its aerodynamically efficient, dual-configuration design incorporating variable-geometry wingtips. This arrangement combines the benefits of a high aspect ratio wing at takeoff and low cruising speeds with the high performance of an arrow-wing in supersonic cruise. And while the structural weight concerns relating to swinging wingtips are substantial, The Edge looks to ever-advancing material technologies to further increase its viability. Heeding well the lessons of the past, The Edge design holds economic feasibility as its primary focus. Therefore, in addition to its inherently superior aerodynamic performance, The Edge uses a lightweight, largely windowless configuration, relying on a synthetic vision system for outside viewing by both pilot and passengers. Additionally, a fly-by-light flight control system is incorporated to address aircraft supersonic cruise instability. The Edge will be produced at an estimated volume of 400 aircraft and will be offered to airlines in 2015 at $167 million per transport (1992 dollars).

  14. Properties on the edge: graphene edge energies, edge stresses, edge warping, and the Wulff shape of graphene flakes

    International Nuclear Information System (INIS)

    Branicio, Paulo S; Jhon, Mark H; Gan, Chee Kwan; Srolovitz, David J

    2011-01-01

    It has been shown that the broken bonds of an unreconstructed graphene edge generate compressive edge stresses leading to edge warping. Here, we investigate edge energies and edge stresses of graphene nanoribbons with arbitrary orientations from armchair to zigzag, considering both flat and warped edge shapes in the presence and absence of hydrogen. We use the second generation reactive empirical bond order potential to calculate the edge energies and stresses for clean and hydrogenated edges. Using these energies, we perform a Wulff construction to determine the equilibrium shapes of flat graphene flakes as a function of hydrogen chemical potential. While edge stresses for clean, flat edges are compressive, they become tensile if allowed to warp. Conversely, we find that edge energies change little (∼1%) with edge warping. Hydrogenation of the edges virtually eliminates both the edge energy and edge stresses. For warped edges an approximately linear relationship is found between amplitudes and wavelengths. The equilibrium shape of a graphene flake is determined by the value of the hydrogen chemical potential. For very small (and large) values of it the flakes have a nearly hexagonal (dodecagon) shape with zigzag oriented edges, while for intermediate values graphene flakes are found with complex shapes

  15. Thermal stability of the tokamak plasma edge

    International Nuclear Information System (INIS)

    Stacey, W.M.

    1997-01-01

    The general linear, fluid, thermal instability theory for the plasma edge has been extended. An analysis of a two-dimensional fluid model of the plasma edge has identified the importance of many previously unappreciated phenomena associated with parallel and gyroviscous forces in the presence of large radial gradients, with large radial or parallel flows, with the temperature dependence of transport coefficients, and with the coupling of temperature, flow and density perturbations. The radiative condensation effect is generalized to include a further destabilizing condensation effect associated with radial heat conduction. Representative plasma edge neutral and impurity densities are found to be capable of driving thermal instabilities in the edge transport barrier and radiative mantle, respectively. (author)

  16. Theory of edge radiation

    Energy Technology Data Exchange (ETDEWEB)

    Geloni, G.; Kocharyan, V.; Saldin, E.; Schneidmiller, E.; Yurkov, M.

    2008-08-15

    We formulate a complete theory of Edge Radiation based on a novel method relying on Fourier Optics techniques. Similar types of radiation like Transition UndulatorRadiation are addressed in the framework of the same formalism. Special attention is payed in discussing the validity of approximations upon which the theory is built. Our study makes consistent use of both similarity techniques and comparisons with numerical results from simulation. We discuss both near and far zone. Physical understanding of many asymptotes is discussed. Based on the solution of the field equation with a tensor Green's function technique, we also discuss an analytical model to describe the presence of a vacuum chamber. In particular, explicit calculations for a circular vacuum chamber are reported. Finally, we consider the use of Edge Radiation as a tool for electron beam diagnostics. We discuss Coherent Edge Radiation, Extraction of Edge Radiation by a mirror, and other issues becoming important at high electron energy and long radiation wavelength. Based on this work we also study the impact of Edge Radiation on XFEL setups and we discuss recent results. (orig.)

  17. High Speed Edge Detection

    Science.gov (United States)

    Prokop, Norman F (Inventor)

    2016-01-01

    Analog circuits for detecting edges in pixel arrays are disclosed. A comparator may be configured to receive an all pass signal and a low pass signal for a pixel intensity in an array of pixels. A latch may be configured to receive a counter signal and a latching signal from the comparator. The comparator may be configured to send the latching signal to the latch when the all pass signal is below the low pass signal minus an offset. The latch may be configured to hold a last negative edge location when the latching signal is received from the comparator.

  18. Band structures in fractal grading porous phononic crystals

    Science.gov (United States)

    Wang, Kai; Liu, Ying; Liang, Tianshu; Wang, Bin

    2018-05-01

    In this paper, a new grading porous structure is introduced based on a Sierpinski triangle routine, and wave propagation in this fractal grading porous phononic crystal is investigated. The influences of fractal hierarchy and porosity on the band structures in fractal graidng porous phononic crystals are clarified. Vibration modes of unit cell at absolute band gap edges are given to manifest formation mechanism of absolute band gaps. The results show that absolute band gaps are easy to form in fractal structures comparatively to the normal ones with the same porosity. Structures with higher fractal hierarchies benefit multiple wider absolute band gaps. This work provides useful guidance in design of fractal porous phononic crystals.

  19. Robust band gap and half-metallicity in graphene with triangular perforations

    DEFF Research Database (Denmark)

    Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

    2016-01-01

    Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG ≅ 500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic...... disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag......-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder...

  20. Congenital Constriction Band Syndrome

    OpenAIRE

    Rajesh Gupta, Fareed Malik, Rishabh Gupta, M.A.Basit, Dara Singh

    2008-01-01

    Congenital constriction bands are anomalous bands that encircle a digit or an extremity. Congenitalconstriction band syndrome is rare condition and is mostly associated with other musculoskeletaldisorders.We report such a rare experience.

  1. The Inner Urban Edge

    Science.gov (United States)

    Ferebee, Ann; Carpenter, Edward K.

    1974-01-01

    In this article, renewal of the inner urban edge is discussed. Norfolk (Virginia) is attempting to blur the difference between old and new neighbor hoods through zoning and architectural controls. Cincinnati (Ohio) is developing an environmentally sound hillside design. Reading (Pennsylvania) is utilizing old railyards for greenbelts of hiking and…

  2. Swords with Blunt Edges

    Science.gov (United States)

    Popham, W. James

    2004-01-01

    Many U.S. educators now wonder whether they're teachers or targets. This mentality stems from the specter of their school being sanctioned for failing the state accountability tests mandated under No Child Left Behind (NCLB). According to this author, most of those tests are like blunt-edged swords: They function badly in two directions. While…

  3. The fundamental absorption edge in MnIn{sub 2}Se{sub 4} layer semi-magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Rincón, C., E-mail: crincon@ula.ve [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Torrres, T.E. [Laboratorio de Magnetismo, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Instituto de Nanociencia de Aragón, Laboratorio de Microscopías Avanzadas, Universidad de Zaragoza 50009, Zaragoza (Spain); Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Zaragoza 50009, Zaragoza, Spain. (Spain); Sagredo, V. [Laboratorio de Magnetismo, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Jiménez-Sandoval, Sergio J.; Mares-Jacinto, E. [CINVESTAV Querétaro, Libramiento Norponiente N° 2000, Frac. Real de Juriquilla, Querétaro, Qro. 76230 (Mexico)

    2015-11-15

    From the study of the optical absorption coefficient and photoluminescence spectra of the layer semi-magnetic semiconductor MnIn{sub 2}Se{sub 4} the nature of its fundamental absorption edge is established. It is found that the lowest-energy-gap of this compound is allowed-indirect between parabolic bands that vary from about 1.55–1.43 eV in the temperature range from 10 K to room temperature. In addition, two allowed direct band-to-band transitions beginning at 1.72 and 1.85 eV at 295 K, and at 1.82 and 1.96 eV at 10 K which are related to optical absorption processes between the uppermost Γ{sub 4}(z) and the middle Γ{sub 5}(x) valence bands and the conduction band respectively, are observed in the high energy range. It is also found that the crystal field splitting parameter (Δ{sub cf}) of MnIn{sub 2}Se{sub 4} is of about 0.15 eV nearly independent of the temperature. At energies around 2.2 eV a photoluminescence band related to internal transitions between d-excited levels of Mn{sup +2} ion to its {sup 6}A{sub 1} ground state is also observed in spectra.

  4. Edge currents in frustrated Josephson junction ladders

    Science.gov (United States)

    Marques, A. M.; Santos, F. D. R.; Dias, R. G.

    2016-09-01

    We present a numerical study of quasi-1D frustrated Josephson junction ladders with diagonal couplings and open boundary conditions, in the large capacitance limit. We derive a correspondence between the energy of this Josephson junction ladder and the expectation value of the Hamiltonian of an analogous tight-binding model, and show how the overall superconducting state of the chain is equivalent to the minimum energy state of the tight-binding model in the subspace of one-particle states with uniform density. To satisfy the constraint of uniform density, the superconducting state of the ladder is written as a linear combination of the allowed k-states of the tight-binding model with open boundaries. Above a critical value of the parameter t (ratio between the intra-rung and inter-rung Josephson couplings) the ladder spontaneously develops currents at the edges, which spread to the bulk as t is increased until complete coverage is reached. Above a certain value of t, which varies with ladder size (t = 1 for an infinite-sized ladder), the edge currents are destroyed. The value t = 1 corresponds, in the tight-binding model, to the opening of a gap between two bands. We argue that the disappearance of the edge currents with this gap opening is not coincidental, and that this points to a topological origin for these edge current states.

  5. Evaluation of edge enhancement effect of phase contrast imaging using newly-developed photostimulable phosphor plate

    International Nuclear Information System (INIS)

    Matsuo, Satoru; Morishita, Junji; Katafuchi, Tetsuro; Fujita, Hiroshi

    2012-01-01

    We investigated whether the use of a newly developed columnar-crystal-type photostimulable-phosphor plate (CP1M200, referred to as system C) helps to provide improved edge-enhanced effect in phase contrast imaging. Physical characteristics of 2 conventional particulate-crystal-type photostimulable-phosphor plates (RP-5PM, referred to as system A and RP-6M, referred to as system B) and system C were measured. Then, an acrylic plate phantom and RMI152 phantom were imaged using 3 types of plates, and the edge-enhancement effects were evaluated based on the profile curve of the acrylic plate phantom. Visual evaluation of the RMI152 phantom images was conducted. The results showed that the modulation transfer function (MTF) of system C was superior to those of the other systems. The WS of system C was superior to those of the other systems in the low frequency band region, and inferior to those of the other systems in the high frequency band region. The presence of an edge-enhanced image was not detectable in the profile curve of the acrylic plate in system A, although that was shown in systems B and C due to their excellent sharpness. In the visual image evaluation of the RMI152 phantom, image quality of system C was superior to those of the other systems. Phase contrast imaging with a digital detector of a columnar-crystal-type photostimulable-phosphor plate is considered to provide improved edge-enhancement over that of conventional plates. (author)

  6. Anomalous conductivity noise in gapped bilayer graphene heterostructure

    Science.gov (United States)

    Aamir, Mohammed Ali; Karnatak, Paritosh; Sai, T. Phanindra; Ghosh, Arindam

    Bilayer graphene has unique electronic properties - it has a tunable band gap and also, valley symmetry and pseudospin degree of freedom like its single layer counterpart. In this work, we present a study of conductance fluctuations in dual gated bilayer graphene heterostructures by varying the Fermi energy and the band gap independently. At a fixed band gap, we find that the conductance fluctuations obtained by Fermi energy ensemble sampling increase rapidly as the Fermi energy is tuned to charge neutrality point (CNP) whereas the time-dependent conductance fluctuations diminish rapidly. This discrepancy is completely absent at higher number densities, where the transport is expected to be through the 2D bulk of the bilayer system. This observation indicates that near the CNP, electrical transport is highly sensitive to Fermi energy, but becomes progressively immune to time-varying disorder. A possible explanation may involve transport via edge states which becomes the dominant conduction mechanism when the bilayer graphene is gapped and Fermi energy is situated close to the CNP, thereby causing a dimensional crossover from 2D to 1D transport. Our experiment outlines a possible experimental protocol to probe intrinsic topological states in gapped bilayer graphene.

  7. Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

    Science.gov (United States)

    Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

    2018-05-01

    As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

  8. Zigzag graphene nanoribbon edge reconstruction with Stone-Wales defects

    DEFF Research Database (Denmark)

    Rodrigues, J. N. B.; Gonçalves, P. A. D; Rodrigues, N. F. G.

    2011-01-01

    In this paper, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab initio calculations of very narrow ribbons. We explore the characteristics of the electronic band...

  9. Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, Suriani, E-mail: sue_83@um.edu.my [Advanced Materials Research Laboratory, Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ahmad, Roslina; Johan, Mohd Rafie [Advanced Materials Research Laboratory, Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2012-01-15

    Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF{sub 6}), ethylene carbonate (EC) and amorphous carbon nanotube ({alpha}CNTs) were prepared by the solution cast technique. The conductivity increases from 10{sup -10} to 10{sup -5} Scm{sup -1} upon the addition of salt. The incorporation of EC and {alpha}CNTs to the salted polymer enhances the conductivity significantly to 10{sup -4} and 10{sup -3} Scm{sup -1}. The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200-400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. - Highlights: > Optical band gap values show the decreasing trend with an increasing dopant concentration. > It is also observed that the absorption edge shifted to longer wavelength on doping. > Results of the optical measurements indicate the presence of a well-defined {pi}{yields}{pi}* transition associated with the formation of a conjugated C=O and/or C=O electronic structure.

  10. Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

    International Nuclear Information System (INIS)

    Ibrahim, Suriani; Ahmad, Roslina; Johan, Mohd Rafie

    2012-01-01

    Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF 6 ), ethylene carbonate (EC) and amorphous carbon nanotube (αCNTs) were prepared by the solution cast technique. The conductivity increases from 10 -10 to 10 -5 Scm -1 upon the addition of salt. The incorporation of EC and αCNTs to the salted polymer enhances the conductivity significantly to 10 -4 and 10 -3 Scm -1 . The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200-400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. - Highlights: → Optical band gap values show the decreasing trend with an increasing dopant concentration. → It is also observed that the absorption edge shifted to longer wavelength on doping. → Results of the optical measurements indicate the presence of a well-defined π→π* transition associated with the formation of a conjugated C=O and/or C=O electronic structure.

  11. ICRF edge modeling

    International Nuclear Information System (INIS)

    1991-01-01

    This report describes the technical progress for the DOE sponsored grant, ''ICRF Edge Modeling.'' An emphasis is placed on the progress since the Technical Progress Report (January 10, 1990) was submitted to the Department of Energy. The design of ICRF antennas for C-Mod and TFTR was investigated during this period. In addition, quasilinear models for electron heating were refined and applied to the design of ICRF antennas. The relevant professional activities sponsored by this grant are given. 4 refs., 11 figs

  12. Temperature dependence of the soft-x-ray emission edges of simple metals

    International Nuclear Information System (INIS)

    Tagle, J.A.; Arakawa, E.T.; Callcott, T.A.

    1980-01-01

    The widths and energy positions of the M/sub 2,3/-emission edge of potassium, K-emission edge of beryllium, and L/sub 2,3/-emission edges of aluminum and magnesium have been measured for temperatures between 80 and 600 0 K. All band edges broaden (ΔGAMMA) and shift in energy (ΔE) with increasing temperatures for these materials. Similar results were reported earlier for the Li K-emission edge and Na L/sub 2,3/ edge. Lattice-relaxation processes and the phonon core-hole interaction are the dominant mechanisms affecting the core-level widths and the experimentally observed edge widths. The edge shifts are found to be proportional to the thermal expansion of the lattice, and are discussed in terms of the electron energy-level shifts which occur as the lattice dilates

  13. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  14. ICRF edge modeling studies

    Energy Technology Data Exchange (ETDEWEB)

    Lehrman, I.S. (Grumman Corp. Research Center, Princeton, NJ (USA)); Colestock, P.L. (Princeton Univ., NJ (USA). Plasma Physics Lab.)

    1990-04-01

    Theoretical models have been developed, and are currently being refined, to explain the edge plasma-antenna interaction that occurs during ICRF heating. The periodic structure of a Faraday shielded antenna is found to result in strong ponderomotive force in the vicinity of the antenna. A fluid model, which incorporates the ponderomotive force, shows an increase in transport to the Faraday shield. A kinetic model shows that the strong antenna near fields act to increase the energy of deuterons which strike the shield, thereby increasing the sputtering of shield material. Estimates of edge impurity harmonic heating show no significant heating for either in or out-of-phase antenna operation. Additionally, a particle model for electrons near the shield shows that heating results from the parallel electric field associated with the fast wave. A quasilinear model for edge electron heating is presented and compared to the particle calculations. The models' predictions are shown to be consistent with measurements of enhanced transport. (orig.).

  15. Bulk and edge spin transport in topological magnon insulators

    Science.gov (United States)

    Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

    2018-02-01

    We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

  16. Electrodynamics of an omega-band as deduced from optical and magnetometer data

    Directory of Open Access Journals (Sweden)

    H. Vanhamäki

    2009-09-01

    Full Text Available We investigate an omega-band event that took place above northern Scandinavia around 02:00–02:30 UT on 9 March 1999. In our analysis we use ground based magnetometer, optical and riometer measurements together with satellite based optical images. The optical and riometer data are used to estimate the ionospheric Hall and Pedersen conductances, while ionospheric equivalent currents are obtained from the magnetometer measurements. These data sets are used as input in a local KRM calculation, which gives the ionospheric potential electric field as output, thus giving us a complete picture of the ionospheric electrodynamic state during the omega-band event. The overall structure of the electric field and field-aligned current (FAC provided by the local KRM method are in good agreement with previous studies. Also the E×B drift velocity calculated from the local KRM solution is in good qualitative agreement with the plasma velocity measured by the Finnish CUTLASS radar, giving further support for the new local KRM method. The high-resolution conductance estimates allow us to discern the detailed structure of the omega-band current system. The highest Hall and Pedersen conductances, ~50 and ~25 S, respectively, are found at the edges of the bright auroral tongue. Inside the tongue, conductances are somewhat smaller, but still significantly higher than typical background values. The electric field shows a converging pattern around the tongues, and the field strength drops from ~40 mV/m found at optically dark regions to ~10 mV/m inside the areas of enhanced conductivity. Downward FAC flow in the dark regions, while upward currents flow inside the auroral tongue. Additionally, sharp conductance gradients at the edge of an auroral tongue are associated with narrow strips of intense FACs, so that a strip of downward current flows at the eastern (leading edge and a similar strip of upward current is present at the western (trailing edge. The Joule

  17. Smoothness in Binomial Edge Ideals

    Directory of Open Access Journals (Sweden)

    Hamid Damadi

    2016-06-01

    Full Text Available In this paper we study some geometric properties of the algebraic set associated to the binomial edge ideal of a graph. We study the singularity and smoothness of the algebraic set associated to the binomial edge ideal of a graph. Some of these algebraic sets are irreducible and some of them are reducible. If every irreducible component of the algebraic set is smooth we call the graph an edge smooth graph, otherwise it is called an edge singular graph. We show that complete graphs are edge smooth and introduce two conditions such that the graph G is edge singular if and only if it satisfies these conditions. Then, it is shown that cycles and most of trees are edge singular. In addition, it is proved that complete bipartite graphs are edge smooth.

  18. Chiral topological excitons in a Chern band insulator

    Science.gov (United States)

    Chen, Ke; Shindou, Ryuichi

    2017-10-01

    A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

  19. Edge Plasma Boundary Layer Generated By Kink Modes in Tokamaks

    International Nuclear Information System (INIS)

    Zakharov, L.E.

    2010-01-01

    This paper describes the structure of the electric current generated by external kink modes at the plasma edge using the ideally conducting plasma model. It is found that the edge current layer is created by both wall touching and free boundary kink modes. Near marginal stability, the total edge current has a universal expression as a result of partial compensation of the (delta)-functional surface current by the bulk current at the edge. The resolution of an apparent paradox with the pressure balance across the plasma boundary in the presence of the surface currents is provided.

  20. Edge effects in composites by moire interferometry

    Science.gov (United States)

    Czarnek, R.; Post, D.; Herakovich, C.

    1983-01-01

    The very high sensitivity of moire interferometry has permitted the present edge effect experiments to be conducted at a low average stress and strain level, assuring linear and elastic behavior in the composite material samples tested. Sensitivity corresponding to 2450 line/mm moire was achieved with a 0.408 micron/fringe. Simultaneous observations of the specimen face and edge displacement fields showed good fringe definition despite the 1-mm thickness of the specimens and the high gradients, and it is noted that the use of a carrier pattern and optical filtering was effective in even these conditions. Edge effects and dramatic displacement gradients were confirmed in angle-ply composite laminates.

  1. Grain size dependent optical band gap of CdI2 films

    Indian Academy of Sciences (India)

    Unknown

    absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap ... while to carry out the optical studies on CdI2 films in order to .... replotted as (αhν)1/2 vs hν to determine indirect gap as shown in the ...

  2. Human vision model in relation to characteristics of shapes for the Mach band effect.

    Science.gov (United States)

    Wu, Bo-Wen; Fang, Yi-Chin

    2015-10-01

    For human vision to recognize the contours of objects means that, as the contrast variation at the object's edges increases, so will the Mach band effect of human vision. This paper more deeply investigates the relationship between changes in the contours of an object and the Mach band effect of human vision. Based on lateral inhibition and the Mach band effect, we studied subjects' eyes as they watched images of different shapes under a fixed brightness at 34  cd/m2, with changes of contrast and spatial frequency. Three types of display were used: a television, a computer monitor, and a projector. For each display used, we conducted a separate experiment for each shape. Although the maximum values for the contrast sensitivity function curves of the displays were different, their variations were minimal. As the spatial frequency changed, the diminishing effect of the different lines also was minimal. However, as the shapes at the contour intersections were modified by the Mach band effect, a greater degree of variation occurred. In addition, as the spatial frequency at a contour intersection increased, the Mach band effect became lower, along with changes in the corresponding contrast sensitivity function curve. Our experimental results on the characteristics of human vision have led to what we believe is a new vision model based on tests with different shapes. This new model may be used for future development and implementation of an artificial vision system.

  3. Saturn's Rings Edge-on

    Science.gov (United States)

    1995-01-01

    In one of nature's most dramatic examples of 'now-you see-them, now-you-don't', NASA's Hubble Space Telescope captured Saturn on May 22, 1995 as the planet's magnificent ring system turned edge-on. This ring-plane crossing occurs approximately every 15 years when the Earth passes through Saturn's ring plane.For comparison, the top picture was taken by Hubble on December 1, 1994 and shows the rings in a more familiar configuration for Earth observers.The bottom picture was taken shortly before the ring plane crossing. The rings do not disappear completely because the edge of the rings reflects sunlight. The dark band across the middle of Saturn is the shadow of the rings cast on the planet (the Sun is almost 3 degrees above the ring plane.) The bright stripe directly above the ring shadow is caused by sunlight reflected off the rings onto Saturn's atmosphere. Two of Saturn's icy moons are visible as tiny starlike objects in or near the ring plane. They are, from left to right, Tethys (slightly above the ring plane) and Dione.This observation will be used to determine the time of ring-plane crossing and the thickness of the main rings and to search for as yet undiscovered satellites. Knowledge of the exact time of ring-plane crossing will lead to an improved determination of the rate at which Saturn 'wobbles' about its axis (polar precession).Both pictures were taken with Hubble's Wide Field Planetary Camera 2. The top image was taken in visible light. Saturn's disk appears different in the bottom image because a narrowband filter (which only lets through light that is not absorbed by methane gas in Saturn's atmosphere) was used to reduce the bright glare of the planet. Though Saturn is approximately 900 million miles away, Hubble can see details as small as 450 miles across.The Wide Field/Planetary Camera 2 was developed by the Jet Propulsion Laboratory and managed by the Goddard Spaced Flight Center for NASA's Office of Space Science.This image and other images and

  4. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  5. Competing edge networks

    Science.gov (United States)

    Parsons, Mark; Grindrod, Peter

    2012-06-01

    We introduce a model for a pair of nonlinear evolving networks, defined over a common set of vertices, subject to edgewise competition. Each network may grow new edges spontaneously or through triad closure. Both networks inhibit the other's growth and encourage the other's demise. These nonlinear stochastic competition equations yield to a mean field analysis resulting in a nonlinear deterministic system. There may be multiple equilibria; and bifurcations of different types are shown to occur within a reduced parameter space. This situation models competitive communication networks such as BlackBerry Messenger displacing SMS; or instant messaging displacing emails.

  6. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  7. The amniotic band syndrome: antenatal sonographic diagnosis and potential pitfalls.

    Science.gov (United States)

    Mahony, B S; Filly, R A; Callen, P W; Golbus, M S

    1985-05-01

    Amniotic band syndrome causes a variety of fetal malformations involving the limbs, craniofacial region, and trunk. Six prenatally diagnosed cases of amniotic band syndrome are discussed. The diagnosis was based on sonographic visualization of either amniotic sheets or bands associated with fetal deformation or deformities in nonembryologic distributions known to characterize the amniotic band syndrome. Seven additional cases are considered in which an aberrant sheet of tissue with a free edge was visualized within the amniotic cavity but no restriction of fetal motion or subsequent deformity was demonstrated.

  8. Picosecond thermometer in the amide I band of myoglobin

    DEFF Research Database (Denmark)

    Austin, R.H.; Xie, A.; Meer, L. van der

    2005-01-01

    The amide I and II bands in myoglobin show a heterogeneous temperature dependence, with bands at 6.17 and 6.43 mu m which are more intense at low temperatures. The amide I band temperature dependence is on the long wavelength edge of the band, while the short wavelength side has almost...... can be used to determine the time it takes vibrational energy to flow into the hydration shell. We determine that vibrational energy flow to the hydration shell from the amide I takes approximately 20 ps to occur....

  9. Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

    Science.gov (United States)

    Chen, Xin; Parker, David; Singh, David J.

    2013-01-01

    We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

  10. Bilayer graphene: gap tunability and edge properties

    International Nuclear Information System (INIS)

    Castro, Eduardo V; Santos, J M B Lopes dos; Peres, N M R; Guinea, F; Castro Neto, A H

    2008-01-01

    Bilayer graphene - two coupled single graphene layers stacked as in graphite - provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy - the Fermi level of the undoped system - has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

  11. Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Yaser M. Banadaki

    2016-03-01

    Full Text Available In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.

  12. Anomalous edge states and the bulk-edge correspondence for periodically-driven two dimensional systems

    DEFF Research Database (Denmark)

    Rudner, Mark Spencer; Lindner, Netanel; Berg, Erez

    2013-01-01

    revealed phenomena that cannot be characterized by analogy to the topological classification framework for static systems. In particular, in driven systems in two dimensions (2D), robust chiral edge states can appear even though the Chern numbers of all the bulk Floquet bands are zero. Here, we elucidate...... the crucial distinctions between static and driven 2D systems, and construct a new topological invariant that yields the correct edge-state structure in the driven case. We provide formulations in both the time and frequency domains, which afford additional insight into the origins of the “anomalous” spectra...... that arise in driven systems. Possibilities for realizing these phenomena in solid-state and cold-atomic systems are discussed....

  13. Cheating on the edge.

    Directory of Open Access Journals (Sweden)

    Lee Alan Dugatkin

    2008-07-01

    Full Text Available We present the results of an individual agent-based model of antibiotic resistance in bacteria. Our model examines antibiotic resistance when two strategies exist: "producers"--who secrete a substance that breaks down antibiotics--and nonproducers ("cheats" who do not secrete, or carry the machinery associated with secretion. The model allows for populations of up to 10,000, in which bacteria are affected by their nearest neighbors, and we assume cheaters die when there are no producers in their neighborhood. Each of 10,000 slots on our grid (a torus could be occupied by a producer or a nonproducer, or could (temporarily be unoccupied. The most surprising and dramatic result we uncovered is that when producers and nonproducers coexist at equilibrium, nonproducers are almost always found on the edges of clusters of producers.

  14. Challenges in edge modeling

    International Nuclear Information System (INIS)

    Schneider, R.

    2007-01-01

    Fluid models like B2, UEDGE or EDGE2D are the working horses for scrape-off layer physics, both for design and experimental support. The concept of a numerical tokamak, aiming at a predictive code for ITER, triggers the need to re-assess the available tools and their necessary extensions. These additional physics issues will be summarized from a personal point-of-view. Depending on the specific problem, several complexity levels of scrape-off layer models will be needed. Therefore, a hierarchy of tools is necessary, which will be discussed. Furthermore, the experience existing in other scientific fields with multi-scale problems and modeling should be used. Here, the coupling of different length and time scales are in particular of interest for fusion problems. (author)

  15. Edge remap for solids

    Energy Technology Data Exchange (ETDEWEB)

    Kamm, James R.; Love, Edward; Robinson, Allen C; Young, Joseph G.; Ridzal, Denis

    2013-12-01

    We review the edge element formulation for describing the kinematics of hyperelastic solids. This approach is used to frame the problem of remapping the inverse deformation gradient for Arbitrary Lagrangian-Eulerian (ALE) simulations of solid dynamics. For hyperelastic materials, the stress state is completely determined by the deformation gradient, so remapping this quantity effectively updates the stress state of the material. A method, inspired by the constrained transport remap in electromagnetics, is reviewed, according to which the zero-curl constraint on the inverse deformation gradient is implicitly satisfied. Open issues related to the accuracy of this approach are identified. An optimization-based approach is implemented to enforce positivity of the determinant of the deformation gradient. The efficacy of this approach is illustrated with numerical examples.

  16. Playing on the edge

    DEFF Research Database (Denmark)

    Cermak-Sassenrath, Daniel

    2018-01-01

    and specific ways. For instance, gambling for money, party and drinking games, professional play and show sports, art installations, violent and military propaganda computer games, pervasive/mobile gaming, live-action role playing, festivals, performances, and games such as Ghosting and Planking. It is argued......Everything gets more interesting, challenging, or intense the closer it gets to the edge, and so does play. How edgy can play become and still be play? Based on Huizinga’s notion of play, this chapter discusses how a wide range of playful activities pushes the boundaries of play in different...... that in concert with a number of characteristics that mark an activity as play, play is essentially a subjective perspective and individual decision of the player. Huizinga calls this attitude the play spirit, which informs a player’s actions and is in turn sustained by them. Edgy digital or mobile games do...

  17. Competing edge networks

    International Nuclear Information System (INIS)

    Parsons, Mark; Grindrod, Peter

    2012-01-01

    We introduce a model for a pair of nonlinear evolving networks, defined over a common set of vertices, subject to edgewise competition. Each network may grow new edges spontaneously or through triad closure. Both networks inhibit the other's growth and encourage the other's demise. These nonlinear stochastic competition equations yield to a mean field analysis resulting in a nonlinear deterministic system. There may be multiple equilibria; and bifurcations of different types are shown to occur within a reduced parameter space. This situation models competitive communication networks such as BlackBerry Messenger displacing SMS; or instant messaging displacing emails. -- Highlights: ► A model for edgewise-competing evolving network pairs is introduced. ► Defined competition equations yield to a mean field analysis. ► Multiple equilibrium states and different bifurcation types can occur. ► The system is sensitive to sparse initial conditions and near unstable equilibriums.

  18. The transition-edge microbolometer (TREMBOL)

    International Nuclear Information System (INIS)

    Wentworth, S.M.; Neikirk, D.P.

    1990-01-01

    The TREMBOL (transition-edge microbolometer) and the composite TREMBOL are introduced as detectors for FIR imaging arrays. The TREMBOL uses a superconductor's sharp change in resistance at the normal conduction to superconduction transition. The structure of the composite TREMBOL enables heating of the individual detectors in an array up to their transition temperature, and can thus be used in multiplexing, which would be very advantageous for two-dimensional arrays. 23 refs

  19. Cutting Edge Localisation in an Edge Profile Milling Head

    NARCIS (Netherlands)

    Fernandez Robles, Laura; Azzopardi, George; Alegre, Enrique; Petkov, Nicolai

    2015-01-01

    Wear evaluation of cutting tools is a key issue for prolonging their lifetime and ensuring high quality of products. In this paper, we present a method for the effective localisation of cutting edges of inserts in digital images of an edge profile milling head. We introduce a new image data set of

  20. An edge index for the quantum spin-Hall effect

    International Nuclear Information System (INIS)

    Prodan, Emil

    2009-01-01

    Quantum spin-Hall systems are topological insulators displaying dissipationless spin currents flowing at the edges of the samples. In contradistinction to the quantum Hall systems where the charge conductance of the edge modes is quantized, the spin conductance is not and it remained an open problem to find the observable whose edge current is quantized. In this paper, we define a particular observable and the edge current corresponding to this observable. We show that this current is quantized and that the quantization is given by the index of a certain Fredholm operator. This provides a new topological invariant that is shown to take the generic values 0 and 2, in line with the Z 2 topological classification of time-reversal invariant systems. The result gives an effective tool for the investigation of the edge structure in quantum spin-Hall systems. Based on a reasonable assumption, we also show that the edge conducting channels are not destroyed by a random edge. (fast track communication)

  1. Redox-dependent spatially resolved electrochemistry at graphene and graphite step edges.

    Science.gov (United States)

    Güell, Aleix G; Cuharuc, Anatolii S; Kim, Yang-Rae; Zhang, Guohui; Tan, Sze-yin; Ebejer, Neil; Unwin, Patrick R

    2015-04-28

    The electrochemical (EC) behavior of mechanically exfoliated graphene and highly oriented pyrolytic graphite (HOPG) is studied at high spatial resolution in aqueous solutions using Ru(NH3)6(3+/2+) as a redox probe whose standard potential sits close to the intrinsic Fermi level of graphene and graphite. When scanning electrochemical cell microscopy (SECCM) data are coupled with that from complementary techniques (AFM, micro-Raman) applied to the same sample area, different time-dependent EC activity between the basal planes and step edges is revealed. In contrast, other redox couples (ferrocene derivatives) whose potential is further removed from the intrinsic Fermi level of graphene and graphite show uniform and high activity (close to diffusion-control). Macroscopic voltammetric measurements in different environments reveal that the time-dependent behavior after HOPG cleavage, peculiar to Ru(NH3)6(3+/2+), is not associated particularly with any surface contaminants but is reasonably attributed to the spontaneous delamination of the HOPG with time to create partially coupled graphene layers, further supported by conductive AFM measurements. This process has a major impact on the density of states of graphene and graphite edges, particularly at the intrinsic Fermi level to which Ru(NH3)6(3+/2+) is most sensitive. Through the use of an improved voltammetric mode of SECCM, we produce movies of potential-resolved and spatially resolved HOPG activity, revealing how enhanced activity at step edges is a subtle effect for Ru(NH3)6(3+/2+). These latter studies allow us to propose a microscopic model to interpret the EC response of graphene (basal plane and edges) and aged HOPG considering the nontrivial electronic band structure.

  2. Nonlinear refraction at the absorption edge in InAs.

    Science.gov (United States)

    Poole, C D; Garmire, E

    1984-08-01

    The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

  3. Optical study of the band structure of wurtzite GaP nanowires

    KAUST Repository

    Assali, S.

    2016-07-25

    We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

  4. Complex band structures of transition metal dichalcogenide monolayers with spin–orbit coupling effects

    International Nuclear Information System (INIS)

    Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

    2016-01-01

    Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2 , where M   =  Mo, W; X   =  S, Se, Te) while including spin–orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed. (paper)

  5. Complex band structures of transition metal dichalcogenide monolayers with spin-orbit coupling effects

    Science.gov (United States)

    Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

    2016-09-01

    Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M  =  Mo, W; X  =  S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.

  6. Optical study of the band structure of wurtzite GaP nanowires

    KAUST Repository

    Assali, S.; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M.; Bechstedt, F.; Bakkers, E. P. A. M.; Haverkort, J. E. M.

    2016-01-01

    We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

  7. Finite size effects on the helical edge states on the Lieb lattice

    International Nuclear Information System (INIS)

    Chen Rui; Zhou Bin

    2016-01-01

    For a two-dimensional Lieb lattice, that is, a line-centered square lattice, the inclusion of the intrinsic spin–orbit (ISO) coupling opens a topologically nontrivial gap, and gives rise to the quantum spin Hall (QSH) effect characterized by two pairs of gapless helical edge states within the bulk gap. Generally, due to the finite size effect in QSH systems, the edge states on the two sides of a strip of finite width can couple together to open a gap in the spectrum. In this paper, we investigate the finite size effect of helical edge states on the Lieb lattice with ISO coupling under three different kinds of boundary conditions, i.e., the straight, bearded and asymmetry edges. The spectrum and wave function of edge modes are derived analytically for a tight-binding model on the Lieb lattice. For a strip Lieb lattice with two straight edges, the ISO coupling induces the Dirac-like bulk states to localize at the edges to become the helical edge states with the same Dirac-like spectrum. Moreover, it is found that in the case with two straight edges the gapless Dirac-like spectrum remains unchanged with decreasing the width of the strip Lieb lattice, and no gap is opened in the edge band. It is concluded that the finite size effect of QSH states is absent in the case with the straight edges. However, in the other two cases with the bearded and asymmetry edges, the energy gap induced by the finite size effect is still opened with decreasing the width of the strip. It is also proposed that the edge band dispersion can be controlled by applying an on-site potential energy on the outermost atoms. (paper)

  8. Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons.

    Science.gov (United States)

    Alaal, Naresh; Medhekar, Nikhil; Shukla, Alok

    2018-04-18

    We employ a first-principles calculations based density-functional-theory (DFT) approach to study the electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, the electrons, which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that metallic behavior is observed for the following passivation patterns: (i) when the B atom from one edge and the N atom from another edge are unpassivated. (ii) when the N atoms from both the edges are unpassivated. (iii) when the C atom from one edge and the N atom from another edge are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that the ABNCNRs exhibit a wide range of electronic and magnetic properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while the partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable as compared to the narrower ones.

  9. ESIM: Edge Similarity for Screen Content Image Quality Assessment.

    Science.gov (United States)

    Ni, Zhangkai; Ma, Lin; Zeng, Huanqiang; Chen, Jing; Cai, Canhui; Ma, Kai-Kuang

    2017-10-01

    In this paper, an accurate full-reference image quality assessment (IQA) model developed for assessing screen content images (SCIs), called the edge similarity (ESIM), is proposed. It is inspired by the fact that the human visual system (HVS) is highly sensitive to edges that are often encountered in SCIs; therefore, essential edge features are extracted and exploited for conducting IQA for the SCIs. The key novelty of the proposed ESIM lies in the extraction and use of three salient edge features-i.e., edge contrast, edge width, and edge direction. The first two attributes are simultaneously generated from the input SCI based on a parametric edge model, while the last one is derived directly from the input SCI. The extraction of these three features will be performed for the reference SCI and the distorted SCI, individually. The degree of similarity measured for each above-mentioned edge attribute is then computed independently, followed by combining them together using our proposed edge-width pooling strategy to generate the final ESIM score. To conduct the performance evaluation of our proposed ESIM model, a new and the largest SCI database (denoted as SCID) is established in our work and made to the public for download. Our database contains 1800 distorted SCIs that are generated from 40 reference SCIs. For each SCI, nine distortion types are investigated, and five degradation levels are produced for each distortion type. Extensive simulation results have clearly shown that the proposed ESIM model is more consistent with the perception of the HVS on the evaluation of distorted SCIs than the multiple state-of-the-art IQA methods.

  10. Tuning carrier mobility of phosphorene nanoribbons by edge passivation and strain

    International Nuclear Information System (INIS)

    Zhang, Xiaoou; Li, Qingfang; Xu, Bo; Wan, Bo; Yin, Jiang; Wan, X.G.

    2016-01-01

    Using first-principles calculations, we have studied the effects of different edge passivation groups on the carrier mobility of the phosphorene nanoribbons (PNRs) and strain effect on the transport property in passivated PNRs. The numerical results show that the size-dependent carrier mobility of passivated PNRs is not very sensitive to the different passivation groups, such as hydrogen (H), fluorine (F) and chlorine (Cl), but strongly associated with the orientation of nanoribbons. Passivated armchair-PNR has much larger carrier mobility than passivated zigzag-PNR at the similar ribbon width. With increasing ribbon width, the electron mobility of passivated PNRs can be further enhanced. We also find that the anisotropy of carrier mobility in passivated PNRs can be reversed by applying tensile strain resulting from order switching of the conduction bands around Fermi level.

  11. Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons

    Science.gov (United States)

    Li, Kuanhong; Zhang, Xiang-Hua

    2018-05-01

    We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.

  12. Tuning carrier mobility of phosphorene nanoribbons by edge passivation and strain

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaoou [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Li, Qingfang, E-mail: qingfangli@nuist.edu.cn [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Department of Physics, Nanjing University of Information Science & Technology, Nanjing 210044 (China); Xu, Bo, E-mail: xubonju@gmail.com [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Wan, Bo [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China); Yin, Jiang [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Wan, X.G. [National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093 (China)

    2016-02-05

    Using first-principles calculations, we have studied the effects of different edge passivation groups on the carrier mobility of the phosphorene nanoribbons (PNRs) and strain effect on the transport property in passivated PNRs. The numerical results show that the size-dependent carrier mobility of passivated PNRs is not very sensitive to the different passivation groups, such as hydrogen (H), fluorine (F) and chlorine (Cl), but strongly associated with the orientation of nanoribbons. Passivated armchair-PNR has much larger carrier mobility than passivated zigzag-PNR at the similar ribbon width. With increasing ribbon width, the electron mobility of passivated PNRs can be further enhanced. We also find that the anisotropy of carrier mobility in passivated PNRs can be reversed by applying tensile strain resulting from order switching of the conduction bands around Fermi level.

  13. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  14. Edge states of a three-dimensional topological insulator

    International Nuclear Information System (INIS)

    Deb, Oindrila; Sen, Diptiman; Soori, Abhiram

    2014-01-01

    We use the bulk Hamiltonian for a three-dimensional topological insulator such as Bi 2 Se 3 to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the surface Hamiltonians (which are derived from the bulk Hamiltonian) and numerical methods based on a lattice discretization of the bulk Hamiltonian. We find that the application of a potential barrier along an edge can give rise to states localized at that edge. These states have an unusual energy-momentum dispersion which can be controlled by applying a potential along the edge; in particular, the velocity of these states can be tuned to zero. The scattering and conductance across the edge is studied as a function of the edge potential. We show that a magnetic field in a particular direction can also give rise to zero energy states on certain edges. We point out possible experimental ways of looking for the various edge states. (paper)

  15. Wide Band to ''Double Band'' upgrade

    International Nuclear Information System (INIS)

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

  16. Robust band gap and half-metallicity in graphene with triangular perforations

    Science.gov (United States)

    Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka

    2016-06-01

    Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.

  17. Characteristics of Ir/Au transition edge sensor

    International Nuclear Information System (INIS)

    Kunieda, Yuichi; Ohno, Masashi; Nakazawa, Masaharu; Takahashi, Hiroyuki; Fukuda, Daiji; Ohkubo, Masataka

    2004-01-01

    A new type of microcalorimeter has been developed using a transition edge sensor (TES) and an electro-thermal feedback (ETF) method to achieve higher energy resolution and higher count rate. We are developing a superconducting Ir-based transition edge sensor (TES) microcalorimeters. To improve thermal conductivity and achieve higher energy resolution with an Ir-TES, we fabricated an Ir/Au bilayer TES by depositing gold on Ir and investigated the influence of intermediate between superconducting and normal states at the transition edge for signal responses by microscopic observation in the Ir/Au-TES. (T. Tanaka)

  18. GSGG edge cladding development: Final technical report

    International Nuclear Information System (INIS)

    Izumitani, T.; Meissner, H.E.; Toratani, H.

    1986-01-01

    The objectives of this project have been: (1) Investigate the possibility of chemical etching of GSGG crystal slabs to obtain increased strength. (2) Design and construct a simplified mold assembly for casting cladding glass to the edges of crystal slabs of different dimensions. (3) Conduct casting experiments to evaluate the redesigned mold assembly and to determine stresses as function of thermal expansion coefficient of cladding glass. (4) Clad larger sizes of GGG slabs as they become available. These tasks have been achieved. Chemical etching of GSGG slabs does not appear possible with any other acid than H 3 PO 4 at temperatures above 300 0 C. A mold assembly has been constructed which allowed casting cladding glass around the edges of the largest GGG slabs available (10 x 20 x 160 mm) without causing breakage through the annealing step

  19. Effects of Edge on-Site Potential in a Honeycomb Topological Magnon Insulator

    Science.gov (United States)

    Pantaleón, Pierre A.; Xian, Yang

    2018-06-01

    While the deviation of the edge on-site potential from the bulk values in a magnonic topological honeycomb lattice leads to the formation of edge states in a bearded boundary, this is not the case for a zigzag termination, where no edge state is found. In a semi-infinite lattice, the intrinsic on-site interactions along the boundary sites generate an effective defect and this gives rise to Tamm-like edge states. If a nontrivial gap is induced, both Tamm-like and topologically protected edge states appear in the band structure. The effective defect can be strengthened by an external on-site potential, and the dispersion relation, velocity and magnon density of the edge states all become tunable.

  20. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    International Nuclear Information System (INIS)

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  1. Thin-film intermediate band chalcopyrite solar cells

    International Nuclear Information System (INIS)

    Fuertes Marron, D.; Marti, A.; Luque, A.

    2009-01-01

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  2. Amniotic constriction bands

    Science.gov (United States)

    ... Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Amniotic band sequence URL of this page: //medlineplus.gov/ency/ ... birth. The baby should be delivered in a medical center that has specialists experienced in caring for babies ... or partial loss of function of a body part. Congenital bands affecting large parts of the body cause the ...

  3. The edge of space time

    International Nuclear Information System (INIS)

    Hawking, S.

    1993-01-01

    What happened at the beginning of the expansion of the universe. Did space time have an edge at the Big Bang. The answer is that, if the boundary conditions of the universe are that it has no boundary, time ceases to be well-defined in the very early universe as the direction ''north'' ceases to be well defined at the North Pole of the Earth. The quantity that we measure as time has a beginning but that does not mean spacetime has an edge, just as the surface of the Earth does not have an edge at the North Pole. 8 figs

  4. Wind tunnel tests of modified cross, hemisflo, and disk-gap-band parachutes with emphasis in the transonic range

    Science.gov (United States)

    Foughner, J. T., Jr.; Alexander, W. C.

    1974-01-01

    Transonic wind-tunnel studies were conducted with modified cross, hemisflo, and disk-gap-band parachute models in the wake of a cone-cylinder shape forebody. The basic cross design was modified with the addition of a circumferential constraining band at the lower edge of the canopy panels. The tests covered a Mach number range of 0.3 to 1.2 and a dynamic pressure range from 479 Newtons per square meter to 5746 Newtons per square meter. The parachute models were flexible textile-type structures and were tethered to a rigid forebody with a single flexible riser. Different size models of the modified cross and disk-gap-band canopies were tested to evaluate scale effects. Model reference diameters were 0.30, 0.61, and 1.07 meters (1.0, 2.0, and 3.5 ft) for the modified cross; and nominal diameters of 0.25 and 0.52 meter (0.83 and 1.7 ft) for the disk-gap-band; and 0.55 meter (1.8 ft) for the hemisflo. Reefing information is presented for the 0.61-meter-diameter cross and the 0.52-meter-diameter disk-gap-band. Results are presented in the form of the variation of steady-state average drag coefficient with Mach number. General stability characteristics of each parachute are discussed. Included are comments on canopy coning, spinning, and fluttering motions.

  5. AlxGa1--xN/GaN band offsets determined by deep-level emission

    International Nuclear Information System (INIS)

    Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

    2001-01-01

    We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

  6. Reduction of airfoil trailing edge noise by trailing edge blowing

    International Nuclear Information System (INIS)

    Gerhard, T; Carolus, T; Erbslöh, S

    2014-01-01

    The paper deals with airfoil trailing edge noise and its reduction by trailing edge blowing. A Somers S834 airfoil section which originally was designed for small wind turbines is investigated. To mimic realistic Reynolds numbers the boundary layer is tripped on pressure and suction side. The chordwise position of the blowing slot is varied. The acoustic sources, i.e. the unsteady flow quantities in the turbulent boundary layer in the vicinity of the trailing edge, are quantified for the airfoil without and with trailing edge blowing by means of a large eddy simulation and complementary measurements. Eventually the far field airfoil noise is measured by a two-microphone filtering and correlation and a 40 microphone array technique. Both, LES-prediction and measurements showed that a suitable blowing jet on the airfoil suction side is able to reduce significantly the turbulence intensity and the induced surface pressure fluctuations in the trailing edge region. As a consequence, trailing edge noise associated with a spectral hump around 500 Hz could be reduced by 3 dB. For that a jet velocity of 50% of the free field velocity was sufficient. The most favourable slot position was at 90% chord length

  7. Conducting Polymers

    Indian Academy of Sciences (India)

    would exhibit electronic conductivity, their conductivities (of compressed pellets) were indeed measured by others, and were found to be .... Polyaniline. Polyphenylene. Polypheny lene- vinylene. Table 1. G!NeRAl I ARTICl! structure. Maximum conductivity Stem Stability. Processability. ~. 1.5 x 105. Reacts with Film not n air.

  8. Anomalous electromagnetically induced transparency in photonic-band-gap materials

    International Nuclear Information System (INIS)

    Singh, Mahi R.

    2004-01-01

    The phenomenon of electromagnetically induced transparency has been studied when a four-level atom is located in a photonic band gap material. Quantum interference is introduced by driving the two upper levels of the atom with a strong pump laser field. The top level and one of the ground levels are coupled by a weak probe laser field and absorption takes place between these two states. The susceptibility due to the absorption for this transition has been calculated by using the master equation method in linear response theory. Numerical simulations are performed for the real and imaginary parts of the susceptibility for a photonic band gap material whose gap-midgap ratio is 21%. It is found that when resonance frequencies lie within the band, the medium becomes transparent under the action of the strong pump laser field. More interesting results are found when one of the resonance frequencies lies at the band edge and within the band gap. When the resonance frequency lies at the band edge, the medium becomes nontransparent even under a strong pump laser field. On the other hand, when the resonance frequency lies within the band gap, the medium becomes transparent even under a weak pump laser field. In summary, we found that the medium can be transformed from the transparent state to the nontransparent state just by changing the location of the resonance frequency. We call these two effects anomalous electromagnetically induced transparency

  9. Diffraction at a Straight Edge

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 20; Issue 5. Diffraction at a Straight Edge: A Gem from Sommerfeld's Work in Classical Physics. Rajaram Nityananda. General Article Volume 20 Issue 5 May 2015 pp 389-400 ...

  10. DAVs: Red Edge and Outbursts

    Science.gov (United States)

    Luan, Jing

    2018-04-01

    As established by ground based surveys, white dwarfs with hydrogen atmospheres pulsate as they cool across the temperature range, 12500Kred edge is a two-decade old puzzle. Recently, Kepler discovered a number of cool DAVs exhibiting sporadic outbursts separated by days, each lasting several hours, and releasing \\sim 10^{33}-10^{34} {erg}. We provide quantitative explanations for both the red edge and the outbursts. The minimal frequency for overstable modes rises abruptly near the red edge. Although high frequency overstable modes exist below the red edge, their photometric amplitudes are generally too small to be detected by ground based observations. Nevertheless, these overstable parent modes can manifest themselves through nonlinear mode couplings to damped daughter modes which generate limit cycles giving rise to photometric outbursts.

  11. Edge Fracture in Complex Fluids.

    Science.gov (United States)

    Hemingway, Ewan J; Kusumaatmaja, Halim; Fielding, Suzanne M

    2017-07-14

    We study theoretically the edge fracture instability in sheared complex fluids, by means of linear stability analysis and direct nonlinear simulations. We derive an exact analytical expression for the onset of edge fracture in terms of the shear-rate derivative of the fluid's second normal stress difference, the shear-rate derivative of the shear stress, the jump in shear stress across the interface between the fluid and the outside medium (usually air), the surface tension of that interface, and the rheometer gap size. We provide a full mechanistic understanding of the edge fracture instability, carefully validated against our simulations. These findings, which are robust with respect to choice of rheological constitutive model, also suggest a possible route to mitigating edge fracture, potentially allowing experimentalists to achieve and accurately measure flows stronger than hitherto possible.

  12. Structural disorder and electronic hybridization in NicMg1-cO solid solutions probed by XANES at the oxygen K edge

    International Nuclear Information System (INIS)

    Chen Dongliang; Zhong Jun; Chu Wangsheng; Wu Ziyu; Kuzmin, Alexei; Mironova-Ulmane, Nina; Marcelli, Augusto

    2007-01-01

    A series of Ni c Mg 1-c O solid solutions has been studied for the first time looking at the structural disorder by means of x-ray absorption near-edge-structure (XANES) spectroscopy at the oxygen K edge. The experimental XANES signals were analysed within the full multiple scattering formalism and were interpreted taking into account clusters of up to 15 coordination shells around an absorbing oxygen atom. The substitution of nickel atoms by magnesium atoms results in a dramatic decrease of the empty density of states in the conduction band close to the Fermi level due to an exchange of the 3d(Ni)-2p(O) interaction with 3p(Mg)-2p(O). Besides, a simultaneous small decrease of the 3d(Ni)-2p(O) hybridization is also induced by the lattice expansion, determined by the difference in ionic radii between nickel and magnesium ions

  13. Structural disorder and electronic hybridization in Ni{sub c}Mg{sub 1-c}O solid solutions probed by XANES at the oxygen K edge

    Energy Technology Data Exchange (ETDEWEB)

    Chen Dongliang [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Zhong Jun [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chu Wangsheng [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wu Ziyu [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Kuzmin, Alexei [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Mironova-Ulmane, Nina [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Marcelli, Augusto [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, PO Box 13, 00044 Frascati (Italy)

    2007-09-05

    A series of Ni{sub c}Mg{sub 1-c}O solid solutions has been studied for the first time looking at the structural disorder by means of x-ray absorption near-edge-structure (XANES) spectroscopy at the oxygen K edge. The experimental XANES signals were analysed within the full multiple scattering formalism and were interpreted taking into account clusters of up to 15 coordination shells around an absorbing oxygen atom. The substitution of nickel atoms by magnesium atoms results in a dramatic decrease of the empty density of states in the conduction band close to the Fermi level due to an exchange of the 3d(Ni)-2p(O) interaction with 3p(Mg)-2p(O). Besides, a simultaneous small decrease of the 3d(Ni)-2p(O) hybridization is also induced by the lattice expansion, determined by the difference in ionic radii between nickel and magnesium ions.

  14. Effects of edge reconstruction on the common groups terminated zigzag phosphorene nanoribbon

    International Nuclear Information System (INIS)

    Xiao, Huaping; Guo, Sumei; Zhang, Chunxiao; He, Chaoyu; Zhong, Jianxin

    2017-01-01

    Edge configuration plays an important role in the electronic properties of nano-structures. In this work, we perform first-principles calculations to study the effects of the cooperation between neighbor groups on the edge configuration and the electronic properties of zigzag-PNRs (ZPNRs) terminated by common groups H, F, O, S and OH. We find that the cooperation has little effect on the H(F)-terminated ZPNRs, but gives rise to an edge reconstruction for the O(S)-terminated ZPNRs. The edge reconstruction derives from the repulsion between neighbor O atoms and the distortion of the P skeleton induced by the p state coupling among the edge, second edge and third edge P atoms. In comparison to the H-terminated ZPNRs, O-terminated ZPNRs are also a semiconductor and enlarge the band gap, but bring about an extra transport channel for the charge transport at the edge and decreases the effective mass of the electron and hole. OH-terminated ZPNRs also undergo a doubling of the unit cell (UC) along the periodic direction because of the different directions of the neighbor O–H bonds. In comparison with the H-terminated ZPNRs, OH-terminated ZPNRs show a similar band gap and electronic effective mass, but increase the effective mass of the hole. (paper)

  15. Edge of polar cap patches

    Science.gov (United States)

    Hosokawa, K.; Taguchi, S.; Ogawa, Y.

    2016-04-01

    On the night of 4 December 2013, a sequence of polar cap patches was captured by an all-sky airglow imager (ASI) in Longyearbyen, Norway (78.1°N, 15.5°E). The 630.0 nm airglow images from the ASI of 4 second exposure time, oversampled the emission of natural lifetime (with quenching) of at least ˜30 sec, introduce no observational blurring effects. By using such high-quality ASI images, we succeeded in visualizing an asymmetry in the gradients between the leading/trailing edges of the patches in a 2-D fashion. The gradient in the leading edge was found to be 2-3 times steeper than that in the trailing edge. We also identified fingerlike structures, appearing only along the trailing edge of the patches, whose horizontal scale size ranged from 55 to 210 km. These fingers are considered to be manifestations of plasma structuring through the gradient-drift instability (GDI), which is known to occur only along the trailing edge of patches. That is, the current 2-D observations visualized, for the first time, how GDI stirs the patch plasma and such a mixing process makes the trailing edge more gradual. This result strongly implies a close connection between the GDI-driven plasma stirring and the asymmetry in the large-scale shape of patches and then suggests that the fingerlike structures can be used as markers to estimate the fine-scale structure in the plasma flow within patches.

  16. Band parameters of phosphorene

    International Nuclear Information System (INIS)

    Lew Yan Voon, L C; Wang, J; Zhang, Y; Willatzen, M

    2015-01-01

    Phosphorene is a two-dimensional nanomaterial with a direct band-gap at the Brillouin zone center. In this paper, we present a recently derived effective-mass theory of the band structure in the presence of strain and electric field, based upon group theory. Band parameters for this theory are computed using a first-principles theory based upon the generalized-gradient approximation to the density-functional theory. These parameters and Hamiltonian will be useful for modeling physical properties of phosphorene. (paper)

  17. Infrared diffuse interstellar bands

    Science.gov (United States)

    Galazutdinov, G. A.; Lee, Jae-Joon; Han, Inwoo; Lee, Byeong-Cheol; Valyavin, G.; Krełowski, J.

    2017-05-01

    We present high-resolution (R ˜ 45 000) profiles of 14 diffuse interstellar bands in the ˜1.45 to ˜2.45 μm range based on spectra obtained with the Immersion Grating INfrared Spectrograph at the McDonald Observatory. The revised list of diffuse bands with accurately estimated rest wavelengths includes six new features. The diffuse band at 15 268.2 Å demonstrates a very symmetric profile shape and thus can serve as a reference for finding the 'interstellar correction' to the rest wavelength frame in the H range, which suffers from a lack of known atomic/molecular lines.

  18. Band parameters of phosphorene

    DEFF Research Database (Denmark)

    Lew Yan Voon, L. C.; Wang, J.; Zhang, Y.

    2015-01-01

    Phosphorene is a two-dimensional nanomaterial with a direct band-gap at the Brillouin zone center. In this paper, we present a recently derived effective-mass theory of the band structure in the presence of strain and electric field, based upon group theory. Band parameters for this theory...... are computed using a first-principles theory based upon the generalized-gradient approximation to the density-functional theory. These parameters and Hamiltonian will be useful for modeling physical properties of phosphorene....

  19. Hybrid functional band gap calculation of SnO6 containing perovskites and their derived structures

    International Nuclear Information System (INIS)

    Lee, Hyewon; Cheong, S.W.; Kim, Bog G.

    2015-01-01

    We have studied the properties of SnO 6 octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO 6 containing perovskites. We also have expended the hybrid density functional calculation to the ASnO 3 /A'SnO 3 system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO 6 containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO 3 for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO 6 octahedrons are plotted as polyhedron. (b) Band gap of ASnO 3 as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO 3 /A'SnO 3 superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO 3 , [001] ordered superlattices, and [111] ordered superlattices of ASnO 3 /A'SnO 3 as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO 3 and ASnO 3 /A'SnO 3 . • The band gap of ASnO 3 using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap

  20. Dendrometer bands made easy: using modified cable ties to measure incremental growth of trees

    Science.gov (United States)

    Anemaet, Evelyn R.; Middleton, Beth A.

    2013-01-01

    Dendrometer bands are a useful way to make sequential repeated measurements of tree growth, but traditional dendrometer bands can be expensive, time consuming, and difficult to construct in the field. An alternative to the traditional method of band construction is to adapt commercially available materials. This paper describes how to construct and install dendrometer bands using smooth-edged, stainless steel, cable tie banding and attachable rollerball heads. As a performance comparison, both traditional and cable tie dendrometer bands were installed on baldcypress trees at the National Wetlands Research Center in Lafayette, Louisiana, by both an experienced and a novice worker. Band installation times were recorded, and growth of the trees as estimated by the two band types was measured after approximately one year, demonstrating equivalence of the two methods. This efficient approach to dendrometer band construction can help advance the knowledge of long-term tree growth in ecological studies.

  1. Bifurcations of edge states—topologically protected and non-protected—in continuous 2D honeycomb structures

    International Nuclear Information System (INIS)

    Fefferman, C L; Lee-Thorp, J P; Weinstein, M I

    2016-01-01

    Edge states are time-harmonic solutions to energy-conserving wave equations, which are propagating parallel to a line-defect or ‘edge’ and are localized transverse to it. This paper summarizes and extends the authors’ work on the bifurcation of topologically protected edge states in continuous two-dimensional (2D) honeycomb structures. We consider a family of Schrödinger Hamiltonians consisting of a bulk honeycomb potential and a perturbing edge potential. The edge potential interpolates between two different periodic structures via a domain wall. We begin by reviewing our recent bifurcation theory of edge states for continuous 2D honeycomb structures (http://arxiv.org/abs/1506.06111). The topologically protected edge state bifurcation is seeded by the zero-energy eigenstate of a one-dimensional Dirac operator. We contrast these protected bifurcations with (more common) non-protected bifurcations from spectral band edges, which are induced by bound states of an effective Schrödinger operator. Numerical simulations for honeycomb structures of varying contrasts and ‘rational edges’ (zigzag, armchair and others), support the following scenario: (a) for low contrast, under a sign condition on a distinguished Fourier coefficient of the bulk honeycomb potential, there exist topologically protected edge states localized transverse to zigzag edges. Otherwise, and for general edges, we expect long lived edge quasi-modes which slowly leak energy into the bulk. (b) For an arbitrary rational edge, there is a threshold in the medium-contrast (depending on the choice of edge) above which there exist topologically protected edge states. In the special case of the armchair edge, there are two families of protected edge states; for each parallel quasimomentum (the quantum number associated with translation invariance) there are edge states which propagate in opposite directions along the armchair edge. (paper)

  2. Bifurcations of edge states—topologically protected and non-protected—in continuous 2D honeycomb structures

    Science.gov (United States)

    Fefferman, C. L.; Lee-Thorp, J. P.; Weinstein, M. I.

    2016-03-01

    Edge states are time-harmonic solutions to energy-conserving wave equations, which are propagating parallel to a line-defect or ‘edge’ and are localized transverse to it. This paper summarizes and extends the authors’ work on the bifurcation of topologically protected edge states in continuous two-dimensional (2D) honeycomb structures. We consider a family of Schrödinger Hamiltonians consisting of a bulk honeycomb potential and a perturbing edge potential. The edge potential interpolates between two different periodic structures via a domain wall. We begin by reviewing our recent bifurcation theory of edge states for continuous 2D honeycomb structures (http://arxiv.org/abs/1506.06111). The topologically protected edge state bifurcation is seeded by the zero-energy eigenstate of a one-dimensional Dirac operator. We contrast these protected bifurcations with (more common) non-protected bifurcations from spectral band edges, which are induced by bound states of an effective Schrödinger operator. Numerical simulations for honeycomb structures of varying contrasts and ‘rational edges’ (zigzag, armchair and others), support the following scenario: (a) for low contrast, under a sign condition on a distinguished Fourier coefficient of the bulk honeycomb potential, there exist topologically protected edge states localized transverse to zigzag edges. Otherwise, and for general edges, we expect long lived edge quasi-modes which slowly leak energy into the bulk. (b) For an arbitrary rational edge, there is a threshold in the medium-contrast (depending on the choice of edge) above which there exist topologically protected edge states. In the special case of the armchair edge, there are two families of protected edge states; for each parallel quasimomentum (the quantum number associated with translation invariance) there are edge states which propagate in opposite directions along the armchair edge.

  3. Effects of edge magnetism on the Kohn anomalies of zigzag graphene nanoribbons

    International Nuclear Information System (INIS)

    Culchac, F J; Capaz, Rodrigo B

    2016-01-01

    The effects of edge magnetism on the Kohn anomaly (KA) of the G-band phonons of zigzag graphene nanoribbons (ZGNRs) are studied using a combination of the tight-binding and mean-field Hubbard models. We show that the opening of an energy gap, induced by magnetic ordering, significantly changes the KA effects, particularly for narrow ribbons in which the gap is larger than the phonon energy. Therefore, the G-band phonon frequency and lifetime are altered for a magnetically-ordered edge state with respect to an unpolarized edge state. The effects of temperature, ZGNR width, doping and transverse electric fields are systematically investigated. We propose using this effect to probe the magnetic order of edge states in graphene nanoribbons using Raman spectroscopy. (paper)

  4. Development of softcopy environment for primary color banding visibility assessment

    Science.gov (United States)

    Min, Byungseok; Pizlo, Zygmunt; Allebach, Jan P.

    2008-01-01

    Fine-pitch banding is one of the most unwanted artifacts in laser electrophotographic (EP) printers. It is perceived as a quasiperiodic fluctuation in the process direction. Therefore, it is essential for printer vendors to know how banding is perceived by humans in order to improve print quality. Monochrome banding has been analyzed and assessed by many researchers; but there is no literature that deals with the banding of color laser printers as measured from actual prints. The study of color banding is complicated by the fact that the color banding signal is physically defined in a three-dimensional color space, while banding perception is described in a one-dimensional sense such as more banding or less banding. In addition, the color banding signal arises from the independent contributions of the four primary colorant banding signals. It is not known how these four distinct signals combine to give rise to the perception of color banding. In this paper, we develop a methodology to assess the banding visibility of the primary colorant cyan based on human visual perception. This is our first step toward studying the more general problem of color banding in combinations of two or more colorants. According to our method, we print and scan the cyan test patch, and extract the banding profile as a one dimensional signal so that we can freely adjust the intensity of banding. Thereafter, by exploiting the pulse width modulation capability of the laser printer, the extracted banding profile is used to modulate a pattern consisting of periodic lines oriented in the process direction, to generate extrinsic banding. This avoids the effect of the halftoning algorithm on the banding. Furthermore, to conduct various banding assessments more efficiently, we also develop a softcopy environment that emulates a hardcopy image on a calibrated monitor, which requires highly accurate device calibration throughout the whole system. To achieve the same color appearance as the hardcopy

  5. CSF oligoclonal banding - slideshow

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/presentations/100145.htm CSF oligoclonal banding - series—Normal anatomy To use the ... 5 out of 5 Overview The cerebrospinal fluid (CSF) serves to supply nutrients to the central nervous ...

  6. Decay of superdeformed bands

    International Nuclear Information System (INIS)

    Carpenter, M.P.; Khoo, T.L.; Lauritsen, T.

    1995-01-01

    One of the major challenges in the study of superdeformation is to directly connect the large number of superdeformed bands now known to the yrast states. In this way, excitation energies, spins and parities can be assigned to the levels in the second well which is essential to establish the collective and single-particle components of these bands. This paper will review some of the progress which has been made to understand the decay of superdeformed bands using the new arrays including the measurement of the total decay spectrum and the establishment of direct one-step decays from the superdeformed band to the yrast line in 194 Hg. 42 refs., 5 figs

  7. Laparoscopic gastric banding

    Science.gov (United States)

    ... eat by making you feel full after eating small amounts of food. After surgery, your doctor can adjust the band ... You will feel full after eating just a small amount of food. The food in the small upper pouch will ...

  8. ICRF/edge physics research on TEXTOR

    International Nuclear Information System (INIS)

    Oost, G. van; Nieuwenhove, R. van; Koch, R.; Messiaen, A.M.; Vandenplas, P.E.; Weynants, R.R.; Dippel, K.H.; Finken, K.H.; Lie, Y.T.; Pospieszczyk, A.; Samm, U.; Schweer, B.; Conn, R.W.; Corbett, W.J.; Goebel, D.M.; Moyer, R.A.; California Univ., Los Angeles

    1990-01-01

    Extensive investigations of ICRF-induced effects on the edge plasma and on plasma-wall interaction were conducted on TEXTOR under different wall- and limiter as well as plasma- and heating conditions. Several strong effects of ICRF on the edge parameters were observed on TEXTOR, such as density rise, instantaneous electron heating, modification of SOL profiles, influx of ligth and/or heavy impurities, increased heat flux to the limiters, and production of energetic ions in the SOL. The fast response time of some of the changes and the observation of a maximum in the SOL profile of electron temperature, heat flux and metal sputtering clearly demonstrated that RF power is directly absorbed in the SOL. Estimates of this power amount to several percent of the total RF power launched into the plasma. Plasma-wall interaction during ICRF was substantially reduced by an appropriate choice of the wall conditioning procedures (wall carbonization with liner at 400degC or, above all, boronization). As a result record low values of the radiated power fraction were achieved during ICRF and long pulse, high power, low impurity operation was possible. Further improvement was obtained by ICRF antenna phasing. When ICRF power is coupled to the plasma, several effects on the core and edge plasma influence the operation of the toroidal pump limiter ALT-II. Experimental and theoretical studies were performed to elucidate the mechanisms responsible for the ICRF-induced effects, including the propagation of plasma waves in the edge plasma and nonlinear phenomena such as parametric decay, important changes in the DC current between the antenna structure and the liner due to the sheath effect at the antennas, and the generation of waves at harmonics of the RF generator frequency. Radial profiles of the DC radial and poloidal electric fields as well as a localized RF electric field structure were measured in the SOL using a fast scanning probe. (orig.)

  9. Thermal physics of transition edge sensor arrays

    International Nuclear Information System (INIS)

    Hoevers, H.F.C.

    2006-01-01

    Thermal transport in transition edge sensor (TES)-based microcalorimeter arrays is reviewed. The fundamentals of thermal conductance in Si 3 N 4 membranes are discussed and the magnitude of the electron-phonon coupling and Kapitza coupling in practical devices is summarized. Next, the thermal transport in high-stopping power and low-heat capacity absorbers, required for arrays of TES microcalorimeters, is discussed in combination with a performance analysis of detectors with mushroom-absorbers. Finally, the phenomenology of unexplained excess noise, observed in both Mo- and Ti-based TESs, is briefly summarized and related with the coupling of the TES to the heat bath

  10. High-Harmonic Generation in Solids with and without Topological Edge States

    DEFF Research Database (Denmark)

    Bauer, Dieter; Hansen, Kenneth Christian Klochmann

    2018-01-01

    High-harmonic generation in the two topological phases of a finite, one-dimensional, periodic structure is investigated using a self-consistent time-dependent density functional theory approach. For harmonic photon energies smaller than the band gap, the harmonic yield is found to differ by up...... to 14 orders of magnitude for the two topological phases. This giant topological effect is explained by the degree of destructive interference in the harmonic emission of all valence-band (and edge-state) electrons, which strongly depends on whether or not topological edge states are present...

  11. Heat conduction

    International Nuclear Information System (INIS)

    Grigull, U.; Sandner, H.

    1984-01-01

    Included are discussions of rates of heat transfer by conduction, the effects of varying and changing properties, thermal explosions, distributed heat sources, moving heat sources, and non-steady three-dimensional conduction processes. Throughout, the importance of thinking both numerically and symbolically is stressed, as this is essential to the development of the intuitive understanding of numerical values needed for successful designing. Extensive tables of thermophysical properties, including thermal conductivity and diffusivity, are presented. Also included are exact and approximate solutions to many of the problems that arise in practical situations

  12. An enhanced narrow-band imaging method for the microvessel detection

    Science.gov (United States)

    Yu, Feng; Song, Enmin; Liu, Hong; Wan, Youming; Zhu, Jun; Hung, Chih-Cheng

    2018-02-01

    A medical endoscope system combined with the narrow-band imaging (NBI), has been shown to be a superior diagnostic tool for early cancer detection. The NBI can reveal the morphologic changes of microvessels in the superficial cancer. In order to improve the conspicuousness of microvessel texture, we propose an enhanced NBI method to improve the conspicuousness of endoscopic images. To obtain the more conspicuous narrow-band images, we use the edge operator to extract the edge information of the narrow-band blue and green images, and give a weight to the extracted edges. Then, the weighted edges are fused with the narrow-band blue and green images. Finally, the displayed endoscopic images are reconstructed with the enhanced narrow-band images. In addition, we evaluate the performance of enhanced narrow-band images with different edge operators. Experimental results indicate that the Sobel and Canny operators achieve the best performance of all. Compared with traditional NBI method of Olympus company, our proposed method has more conspicuous texture of microvessel.

  13. Calculation of Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

    OpenAIRE

    Cendula, P.; Tilley, S. D.; Gimenez, S.; Schmid, M.; Bisquert, J.; Graetzel, M.; Schumacher, J. O.

    2014-01-01

    A physical model is presented for a semiconductor electrode of a photoelectrochemical (PEC) cell, accounting for the potential drop in the Helmholtz layer. Hence both band edge pinning and unpinning are naturally included in our description. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calculation of the position of the energy bands and the variation of the quasi-Fermi levels in the semic...

  14. Electrical Conductivity.

    Science.gov (United States)

    Hershey, David R.; Sand, Susan

    1993-01-01

    Explains how electrical conductivity (EC) can be used to measure ion concentration in solutions. Describes instrumentation for the measurement, temperature dependence and EC, and the EC of common substances. (PR)

  15. Conduct Disorder

    Science.gov (United States)

    ... objections runs away from home often truant from school Children who exhibit these behaviors should receive a comprehensive evaluation by an experience mental health professional. Many children with a conduct disorder may ...

  16. All-graphene edge contacts

    DEFF Research Database (Denmark)

    Jacobsen, Kåre Wedel; Falkenberg, Jesper Toft; Papior, Nick Rübner

    2016-01-01

    Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures as a func......Using ab-initio methods we investigate the possibility of three-terminalgraphene "T-junction" devices and show that these all-graphene edge contactsare energetically feasible when the 1D interface itself is free from foreignatoms. We examine the energetics of various junction structures...... to be in therange of 1-10 kΩμm which is comparable to the best contact resistance reportedfor edge-contacted graphene-metal contacts. We conclude that conductingall-carbon T-junctions should be feasible....

  17. Improving color constancy by photometric edge weighting

    NARCIS (Netherlands)

    Gijsenij, A.; Gevers, T.; van de Weijer, J.

    2012-01-01

    Edge-based color constancy methods make use of image derivatives to estimate the illuminant. However, different edge types exist in real-world images, such as material, shadow, and highlight edges. These different edge types may have a distinctive influence on the performance of the illuminant

  18. The knife-edge chamber

    International Nuclear Information System (INIS)

    Barasch, E.F.; Bowcock, T.J.V.; Drew, M.M.; Elliott, S.M.; Lee, B.; McIntyre, P.M.; Pang, Y.; Popovic, M.; Smith, D.D.

    1990-01-01

    In this paper the design for a new technology for particle track detectors is described. Using standard IC fabrication techniques, a pattern of microscopic knife edges and field-shaping electrodes can be fabricated on a silicon substrate. The knife-edge chamber uniquely offers attractive performance for the track chambers required for SSC detectors, for which no present technology is yet satisfactory. Its features include: excellent radiation hardness (10 Mrad), excellent spatial resolution (∼20 μm), short drift time (20 ns), and large pulse height (1 mV)

  19. Scattering of surface plasmons on graphene by a discontinuity in surface conductivity

    International Nuclear Information System (INIS)

    Rejaei, Behzad; Khavasi, Amin

    2015-01-01

    The scattering of graphene surface plasmons from an arbitrary, one-dimensional discontinuity in graphene surface conductivity is treated analytically by an exact solution of the quasi-static integral equation for surface current density in the spectral domain. It is found that the reflection and transmission coefficients are not governed by the Fresnel formulas obtained by means of the effective medium approach. Furthermore, the reflection coefficient generally exhibits an anomalous reflection phase, which has so far only been reported for the particular case of reflection from abrupt edges. This anomalous phase becomes frequency-independent in the regime where the effect of inter-band transitions on graphene conductivity is negligible. The results are in excellent agreement with full-wave electromagnetic simulations, and can serve as a basis for the analysis of inhomogeneous graphene layers with a piecewise-constant conductivity profile. (paper)

  20. Band alignment of type I at (100ZnTe/PbSe interface

    Directory of Open Access Journals (Sweden)

    Igor Konovalov

    2016-06-01

    Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

  1. Ultra wide band antennas

    CERN Document Server

    Begaud, Xavier

    2013-01-01

    Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recog

  2. At the edge of intonation

    DEFF Research Database (Denmark)

    Niebuhr, Oliver

    2012-01-01

    The paper is concerned with the 'edge of intonation' in a twofold sense. It focuses on utterance-final F0 movements and crosses the traditional segment-prosody divide by investigating the interplay of F0 and voiceless fricatives in speech production. An experiment was performed for German with four...

  3. Capillary Sharp Inner Edge Manufacturing

    Czech Academy of Sciences Publication Activity Database

    Hošek, Jan; Studenovský, K.; Najdek, D.

    2009-01-01

    Roč. 19, č. 35 (2009), s. 19-25 ISSN 1584-5982. [MECAHITECH 09 /1./. Bukurešť, 08.10.2009-09.10.2009] R&D Projects: GA AV ČR IAA200760905 Institutional research plan: CEZ:AV0Z20760514 Keywords : capillary * edge * manufacturing Subject RIV: JR - Other Machinery

  4. Development of edge effects around experimental ecosystem hotspots is affected by edge density and matrix type

    Science.gov (United States)

    Ecological edge effects are sensitive to landscape context. In particular, edge effects can be altered by matrix type and by the presence of other nearby edges. We experimentally altered patch configurations in an African savanna to determine how edge density and matrix type influence edge effect de...

  5. Conduct disorders

    NARCIS (Netherlands)

    Buitelaar, J.K.; Smeets, K.C.; Herpers, P.; Scheepers, F.; Glennon, J.; Rommelse, N.N.J.

    2013-01-01

    Conduct disorder (CD) is a frequently occurring psychiatric disorder characterized by a persistent pattern of aggressive and non-aggressive rule breaking antisocial behaviours that lead to considerable burden for the patients themselves, their family and society. This review paper updates diagnostic

  6. Conductivity-limiting bipolar thermal conductivity in semiconductors

    Science.gov (United States)

    Wang, Shanyu; Yang, Jiong; Toll, Trevor; Yang, Jihui; Zhang, Wenqing; Tang, Xinfeng

    2015-01-01

    Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors. PMID:25970560

  7. Keeping the band together: evidence for false boundary disruptive coloration in a butterfly.

    Science.gov (United States)

    Seymoure, B M; Aiello, A

    2015-09-01

    There is a recent surge of evidence supporting disruptive coloration, in which patterns break up the animal's outline through false edges or boundaries, increasing survival in animals by reducing predator detection and/or preventing recognition. Although research has demonstrated that false edges are successful for reducing predation of prey, research into the role of internal false boundaries (i.e. stripes and bands) in reducing predation remains warranted. Many animals have stripes and bands that may function disruptively. Here, we test the possible disruptive function of wing band patterning in a butterfly, Anartia fatima, using artificial paper and plasticine models in Panama. We manipulated the band so that one model type had the band shifted to the wing margin (nondisruptive treatment) and another model had a discontinuous band located on the wing margin (discontinuous edge treatment). We kept the natural wing pattern to represent the false boundary treatment. Across all treatment groups, we standardized the area of colour and used avian visual models to confirm a match between manipulated and natural wing colours. False boundary models had higher survival than either the discontinuous edge model or the nondisruptive model. There was no survival difference between the discontinuous edge model and the nondisruptive model. Our results demonstrate the importance of wing bands in reducing predation on butterflies and show that markings set in from the wing margin can reduce predation more effectively than marginal bands and discontinuous marginal patterns. This study demonstrates an adaptive benefit of having stripes and bands. © 2015 European Society For Evolutionary Biology.

  8. Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2 Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Meng Jiang

    2014-01-01

    Full Text Available Spectroscopic ellipsometry study was employed for phase pure VO2(M1 thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2(M1 thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1 thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1 at varied O2-Ar ratios are almost the same (~2.0 eV; consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E2 decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

  9. Edge-injective and edge-surjective vertex labellings

    DEFF Research Database (Denmark)

    Brandt, Stephan; Rautenbach, D.; Regen, F.

    2010-01-01

    For a graph G = (V, E) we consider vertex-k-labellings f : V → {1,2, ,k} for which the induced edge weighting w : E → {2, 3,., 2k} with w(uv) = f(u) + f(v) is injective or surjective or both. We study the relation between these labellings and the number theoretic notions of an additive basis and ...

  10. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Gang [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Mao, Yuliang, E-mail: ylmao@xtu.edu.cn [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Zhong, Jianxin [Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan, 411105 (China); Yuan, Jianmei [Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Hunan, 411105 (China); Zhao, Hongquan, E-mail: hqzhao@cigit.ac.cn [Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 401120 (China)

    2017-06-01

    Highlights: • Edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. • Significant charge transfer from Li adatoms to Si atoms is found, indicating the main ionic interactions. • The band structures of zigzag silicene nanoribbon are sensitive with the variation of sites of Li adatoms at the two edges. • The local magnetic moments at the two edges of zigzag silicene nanoribbon are suppressed by the adsorptions of Li adatoms. - Abstract: First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

  11. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

    International Nuclear Information System (INIS)

    Guo, Gang; Mao, Yuliang; Zhong, Jianxin; Yuan, Jianmei; Zhao, Hongquan

    2017-01-01

    Highlights: • Edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. • Significant charge transfer from Li adatoms to Si atoms is found, indicating the main ionic interactions. • The band structures of zigzag silicene nanoribbon are sensitive with the variation of sites of Li adatoms at the two edges. • The local magnetic moments at the two edges of zigzag silicene nanoribbon are suppressed by the adsorptions of Li adatoms. - Abstract: First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

  12. Research on the Band Gap Characteristics of Two-Dimensional Phononic Crystals Microcavity with Local Resonant Structure

    Directory of Open Access Journals (Sweden)

    Mao Liu

    2015-01-01

    Full Text Available A new two-dimensional locally resonant phononic crystal with microcavity structure is proposed. The acoustic wave band gap characteristics of this new structure are studied using finite element method. At the same time, the corresponding displacement eigenmodes of the band edges of the lowest band gap and the transmission spectrum are calculated. The results proved that phononic crystals with microcavity structure exhibited complete band gaps in low-frequency range. The eigenfrequency of the lower edge of the first gap is lower than no microcavity structure. However, for no microcavity structure type of quadrilateral phononic crystal plate, the second band gap disappeared and the frequency range of the first band gap is relatively narrow. The main reason for appearing low-frequency band gaps is that the proposed phononic crystal introduced the local resonant microcavity structure. This study provides a good support for engineering application such as low-frequency vibration attenuation and noise control.

  13. Band-notched spiral antenna

    Science.gov (United States)

    Jeon, Jae; Chang, John

    2018-03-13

    A band-notched spiral antenna having one or more spiral arms extending from a radially inner end to a radially outer end for transmitting or receiving electromagnetic radiation over a frequency range, and one or more resonance structures positioned adjacent one or more segments of the spiral arm associated with a notch frequency band or bands of the frequency range so as to resonate and suppress the transmission or reception of electromagnetic radiation over said notch frequency band or bands.

  14. Generalized Multi-Edge Analysis for K-Edge Densitometry

    International Nuclear Information System (INIS)

    Collins, M.

    1998-01-01

    In K-edge densitometry (KED), a continuous-energy x-ray beam is transmitted through a liquid sample. The actinide content of the sample can be measured through analysis of the transmitted portion of the x-ray beam. Traditional methods for KED analysis allow the simultaneous calculation of, at most, two actinide concentrations. A generalized multi-edge KED analytical method is presented, allowing up to six actinide concentrations to be calculated simultaneously. Applications of this method for hybrid KED/x-ray fluorescence (HKED) systems are discussed. Current HKED systems require the operator to know the approximate actinide content of each sample, and manually select the proper analysis mode. The new multi-edge KED technique allows rapid identification of the major actinide components in a sample, independent of actinide content. The proper HKED analysis mode can be selected automatically, without requiring sample content information from the user. Automatic HKED analysis would be especially useful in an analytical laboratory setting, where samples with truly unknown characteristics are encountered. Because this technique requires no hardware modifications, several facilities that use HKED may eventually benefit from this approach

  15. A portable and independent edge fluctuation diagnostic

    International Nuclear Information System (INIS)

    Tsui, H.Y.W.; Ritz, C.P.; Wootton, A.J.

    1991-01-01

    The measurements of fluctuations and its associated transport with Langmuir probes have provided essential experimental information for some understanding of the turbulent transport. While such measurements have been conducted in the edge region of several tokamaks, only limited effort has been devoted to link and to consolidate these results: such effort can provide information for a more global understanding of the transport process. The purpose of this project is to provide a portable diagnostic facility to measure the edge turbulence on different devices, a signal processing package to analyze the data in a systematic manner and a database to consolidate the experimental results. The end product which provides a collection of information for the comparisons with the theoretical models may lead to a more global understanding of the transport process. A compact self contained portable system has been designed and developed to diagnose the edge plasma of devices with a wide range of sizes and configurations. The system is capable of measuring both the mean and the fluctuation quantities of density, temperature and potential from a standardized Langmuir probe array using a fast reciprocating probe drive. The system can also be used for other fluctuation diagnostics, such as magnetic probes, if necessary. The data acquisition and analysis is performed on a Macintosh 2fx which provides a user-friendly environment. The results obtained by the signal processing routines are stored in a tabloid format to allow comparative studies. The database is a core part of the portable signal analysis system. It allows a fast display of shot data versus each other, as well as comparison between different devices

  16. The graph-theoretic minimum energy path problem for ionic conduction

    Directory of Open Access Journals (Sweden)

    Ippei Kishida

    2015-10-01

    Full Text Available A new computational method was developed to analyze the ionic conduction mechanism in crystals through graph theory. The graph was organized into nodes, which represent the crystal structures modeled by ionic site occupation, and edges, which represent structure transitions via ionic jumps. We proposed a minimum energy path problem, which is similar to the shortest path problem. An effective algorithm to solve the problem was established. Since our method does not use randomized algorithm and time parameters, the computational cost to analyze conduction paths and a migration energy is very low. The power of the method was verified by applying it to α-AgI and the ionic conduction mechanism in α-AgI was revealed. The analysis using single point calculations found the minimum energy path for long-distance ionic conduction, which consists of 12 steps of ionic jumps in a unit cell. From the results, the detailed theoretical migration energy was calculated as 0.11 eV by geometry optimization and nudged elastic band method. Our method can refine candidates for possible jumps in crystals and it can be adapted to other computational methods, such as the nudged elastic band method. We expect that our method will be a powerful tool for analyzing ionic conduction mechanisms, even for large complex crystals.

  17. Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

    2014-01-01

    We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

  18. Topological magnon bands in ferromagnetic star lattice

    International Nuclear Information System (INIS)

    Owerre, S A

    2017-01-01

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

  19. Topological magnon bands in ferromagnetic star lattice.

    Science.gov (United States)

    Owerre, S A

    2017-05-10

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.

  20. Band tailing and efficiency limitation in kesterite solar cells

    Science.gov (United States)

    Gokmen, Tayfun; Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

    2013-09-01

    We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)2 devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices.

  1. Nonreciprocity of edge modes in 1D magnonic crystal

    International Nuclear Information System (INIS)

    Lisenkov, I.; Kalyabin, D.; Osokin, S.; Klos, J.W.; Krawczyk, M.; Nikitov, S.

    2015-01-01

    Spin waves propagation in 1D magnonic crystals is investigated theoretically. Mathematical model based on plane wave expansion method is applied to different types of magnonic crystals, namely bi-component magnonic crystal with symmetric/asymmetric boundaries and ferromagnetic film with periodically corrugated top surface. It is shown that edge modes in magnonic crystals may exhibit nonreciprocal behaviour at much lower frequencies than in homogeneous films. - Highlights: • Magnetostatic surface spin waves in 1D magnonic crystals were studied theoretically. • Mathematical model is based on plane wave method. • Mathematical model was applied to different types of magnonic crystals. • Stop band formation and nonreciprocity were obtained

  2. Tailoring highly conductive graphene nanoribbons from small polycyclic aromatic hydrocarbons: a computational study.

    Science.gov (United States)

    Bilić, A; Sanvito, S

    2013-07-10

    Pyrene, the smallest two-dimensional mesh of aromatic rings, with various terminal thiol substitutions, has been considered as a potential molecular interconnect. Charge transport through two terminal devices has been modeled using density functional theory (with and without self interaction correction) and the non-equilibrium Green's function method. A tetra-substituted pyrene, with dual thiol terminal groups at opposite ends, has been identified as an excellent candidate, owing to its high conductance, virtually independent of bias voltage. The two possible extensions of its motif generate two series of graphene nanoribbons, with zigzag and armchair edges and with semimetallic and semiconducting electron band structure, respectively. The effects related to the wire length and the bias voltage on the charge transport have been investigated for both sets. The conductance of the nanoribbons with a zigzag edge does not show either length or voltage dependence, owing to an almost perfect electron transmission with a continuum of conducting channels. In contrast, for the armchair nanoribbons a slow exponential attenuation of the conductance with the length has been found, due to their semiconducting nature.

  3. Tailoring highly conductive graphene nanoribbons from small polycyclic aromatic hydrocarbons: a computational study

    KAUST Repository

    Bilić, A

    2013-06-14

    Pyrene, the smallest two-dimensional mesh of aromatic rings, with various terminal thiol substitutions, has been considered as a potential molecular interconnect. Charge transport through two terminal devices has been modeled using density functional theory (with and without self interaction correction) and the non-equilibrium Green\\'s function method. A tetra-substituted pyrene, with dual thiol terminal groups at opposite ends, has been identified as an excellent candidate, owing to its high conductance, virtually independent of bias voltage. The two possible extensions of its motif generate two series of graphene nanoribbons, with zigzag and armchair edges and with semimetallic and semiconducting electron band structure, respectively. The effects related to the wire length and the bias voltage on the charge transport have been investigated for both sets. The conductance of the nanoribbons with a zigzag edge does not show either length or voltage dependence, owing to an almost perfect electron transmission with a continuum of conducting channels. In contrast, for the armchair nanoribbons a slow exponential attenuation of the conductance with the length has been found, due to their semiconducting nature. © 2013 IOP Publishing Ltd.

  4. Flattening and truncation of stellar discs in edge-on spiral galaxies

    NARCIS (Netherlands)

    Kregel, M; van der Kruit, PC; de Grijs, R

    We analyse the global structure of the old stellar discs in 34 edge-on spiral galaxies. The radial and vertical exponential scale parameters of the discs are obtained by applying an improved two-dimensional decomposition technique to our I -band photometry. We find a clear increase in the disc

  5. Conductivity Probe

    Science.gov (United States)

    2008-01-01

    The Thermal and Electrical Conductivity Probe (TECP) for NASA's Phoenix Mars Lander took measurements in Martian soil and in the air. The needles on the end of the instrument were inserted into the Martian soil, allowing TECP to measure the propagation of both thermal and electrical energy. TECP also measured the humidity in the surrounding air. The needles on the probe are 15 millimeters (0.6 inch) long. The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  6. Symmetrical metallic and magnetic edge states of nanoribbon from semiconductive monolayer PtS2

    Science.gov (United States)

    Liu, Shan; Zhu, Heyu; Liu, Ziran; Zhou, Guanghui

    2018-03-01

    Transition metal dichalcogenides (TMD) MoS2 or graphene could be designed to metallic nanoribbons, which always have only one edge show metallic properties due to symmetric protection. In present work, a nanoribbon with two parallel metallic and magnetic edges was designed from a noble TMD PtS2 by employing first-principles calculations based on density functional theory (DFT). Edge energy, bonding charge density, band structure, density of states (DOS) and simulated scanning tunneling microscopy (STM) of four possible edge states of monolayer semiconductive PtS2 were systematically studied. Detailed calculations show that only Pt-terminated edge state among four edge states was relatively stable, metallic and magnetic. Those metallic and magnetic properties mainly contributed from 5d orbits of Pt atoms located at edges. What's more, two of those central symmetric edges coexist in one zigzag nanoribbon, which providing two atomic metallic wires thus may have promising application for the realization of quantum effects, such as Aharanov-Bohm effect and atomic power transmission lines in single nanoribbon.

  7. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Science.gov (United States)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  8. Edge imaging in intense beams

    Directory of Open Access Journals (Sweden)

    S. Bernal

    2002-06-01

    Full Text Available The appearance of rings of charge observed near the edge of beams from high-perveance guns is described with a simple ray tracing technique inspired by the particle-core model. We illustrate the technique, which has no analog in light optics, with examples from experiments employing solenoid focusing of an electron beam. The rings of charge result from the combined effects of external focusing and space-charge forces acting on paraxial fringe particles with relatively large initial transverse velocities. The model is independent of the physical mechanisms responsible for the fringe particles. Furthermore, the focal length for edge imaging in a uniform focusing channel is derived using a linearized trajectory equation for the motion of fringe particles. Counterintuitively, the focal length decreases as the beam current increases.

  9. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction evaluated from synchrotron based X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S. D., E-mail: devsh@rrcat.gov.in; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Nand, Mangla; Jha, S. N. [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Shukla, D. K.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452017 (India)

    2016-04-28

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al{sub 2}O{sub 3} substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al{sub 2}O{sub 3} substrate. Surface related feature in Ni 2p{sub 3/2} core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al{sub 2}O{sub 3} substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al{sub 2}O{sub 3} layers. A type-I band alignment at NiO and Al{sub 2}O{sub 3} heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  10. Nonreference Medical Image Edge Map Measure

    Directory of Open Access Journals (Sweden)

    Karen Panetta

    2014-01-01

    Full Text Available Edge detection is a key step in medical image processing. It is widely used to extract features, perform segmentation, and further assist in diagnosis. A poor quality edge map can result in false alarms and misses in cancer detection algorithms. Therefore, it is necessary to have a reliable edge measure to assist in selecting the optimal edge map. Existing reference based edge measures require a ground truth edge map to evaluate the similarity between the generated edge map and the ground truth. However, the ground truth images are not available for medical images. Therefore, a nonreference edge measure is ideal for medical image processing applications. In this paper, a nonreference reconstruction based edge map evaluation (NREM is proposed. The theoretical basis is that a good edge map keeps the structure and details of the original image thus would yield a good reconstructed image. The NREM is based on comparing the similarity between the reconstructed image with the original image using this concept. The edge measure is used for selecting the optimal edge detection algorithm and optimal parameters for the algorithm. Experimental results show that the quantitative evaluations given by the edge measure have good correlations with human visual analysis.

  11. Gyrosheath near the tokamak edge

    International Nuclear Information System (INIS)

    Hazeltine, R.D.; Xiao, H.; Valanju, P.M.

    1993-03-01

    A new model for the structure of the radial electric field profile in the edge during the H-mode is proposed. Charge separation caused by the difference between electron and ion gyromotion, or more importantly in a tokamak, the banana motion (halo effect) can self-consistently produce an electric dipole moment that causes the sheared radial electric field. The calculated results based on the model are consistent with D-III D and TEXTOR experimental results

  12. Antenna-coupled bolometer arrays using transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael J. [Department of Physics, University of California, Berkeley, California 94720 (United States)]. E-mail: mmyers@cosmology.berkeley.edu; Ade, Peter [School of Physics and Astronomy, Cardiff University, Cardiff, Wales (United Kingdom); Arnold, Kam [Department of Physics, University of California, Berkeley, California 94720 (United States); Engargiola, Greg [Department of Astronomy, University of California, Berkeley, California 94720 (United States); Holzapfel, Bill [Department of Physics, University of California, Berkeley, California 94720 (United States); Lee, Adrian T. [Department of Physics, University of California, Berkeley, California 94720 (United States); O' Brient, Roger [Department of Physics, University of California, Berkeley, California 94720 (United States); Richards, Paul L. [Department of Physics, University of California, Berkeley, California 94720 (United States); Smith, Andy [Northrop Grumman, Redondo Beach, California 90278 (United States); Spieler, Helmuth [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tran, Huan T. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2006-04-15

    We are developing antenna-coupled Transition-Edge Sensor (TES) bolometer arrays for use in measurements of the CMB polarization. TES bolometers have many well-known advantages over conventional bolometers, such as increased speed, linearity, and the existence of readout multiplexers. Antenna-coupled bolometers use an on-chip planar antenna to couple light into the bolometer. The antenna directivity and polarization sensitivity, along with the potential for on-chip band defining filters and channelizing circuits, allow a significant increase in focal plane integration. This eliminates the bulky horns, quasioptical filters, dichroics, and polarizers which might otherwise be needed in a conventional bolometric system. This simplification will ease the construction of receivers with larger numbers of pixels. We report on the fabrication and optical testing of single antenna-coupled bolometer pixels with integrated band defining filters. We will also discuss current progress on fabrication of a bolometer array based on this design.

  13. Edge type affects leaf-level water relations and estimated transpiration of Eucalyptus arenacea.

    Science.gov (United States)

    Wright, Thomas E; Tausz, Michael; Kasel, Sabine; Volkova, Liubov; Merchant, Andrew; Bennett, Lauren T

    2012-03-01

    While edge effects on tree water relations are well described for closed forests, they remain under-examined in more open forest types. Similarly, there has been minimal evaluation of the effects of contrasting land uses on the water relations of open forest types in highly fragmented landscapes. We examined edge effects on the water relations and gas exchange of a dominant tree (Eucalyptus arenacea Marginson & Ladiges) in an open forest type (temperate woodland) of south-eastern Australia. Edge effects in replicate woodlands adjoined by cleared agricultural land (pasture edges) were compared with those adjoined by 7- to 9-year-old eucalypt plantation with a 25m fire break (plantation edges). Consistent with studies in closed forest types, edge effects were pronounced at pasture edges where photosynthesis, transpiration and stomatal conductance were greater for edge trees than interior trees (75m into woodlands), and were related to greater light availability and significantly higher branch water potentials at woodland edges than interiors. Nonetheless, gas exchange values were only ∼50% greater for edge than interior trees, compared with ∼200% previously found in closed forest types. In contrast to woodlands adjoined by pasture, gas exchange in winter was significantly lower for edge than interior trees in woodlands adjoined by plantations, consistent with shading and buffering effects of plantations on edge microclimate. Plantation edge effects were less pronounced in summer, although higher water use efficiency of edge than interior woodland trees indicated possible competition for water between plantation trees and woodland edge trees in the drier months (an effect that might have been more pronounced were there no firebreak between the two land uses). Scaling up of leaf-level water relations to stand transpiration using a Jarvis-type phenomenological model indicated similar differences between edge types. That is, transpiration was greater at pasture than

  14. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study

    Science.gov (United States)

    Guo, Gang; Mao, Yuliang; Zhong, Jianxin; Yuan, Jianmei; Zhao, Hongquan

    2017-06-01

    First-principles spin-polarized calculations are performed to design lithium storage materials using the active edges of zigzag silicene nanoribbon (ZSiNR). We predict that edge-adsorption of Li adatoms on zigzag silicene nanoribbon is preferred in energy to form new type lithium storage materials. Significant charge transfer from Li adatoms to Si atoms at the edges of ZSiNR is found, indicating the main ionic interactions. It is found that the band structures of ZSiNR with Li adsorptions are sensitive with the variation of sites of adatoms at the two edges. Ferro-magnetic to antiferro-magnetic change is found in ZSiNR with symmetrical adsorption of Li adatoms at its two edges. Other unsymmetrical Li adsorptions at the edges of ZSiNR prefer to stay in ferro-magnetic state as that in narrow pristine ZSiNR.

  15. The hierarchically organized splitting of chromosome bands into sub-bands analyzed by multicolor banding (MCB).

    Science.gov (United States)

    Lehrer, H; Weise, A; Michel, S; Starke, H; Mrasek, K; Heller, A; Kuechler, A; Claussen, U; Liehr, T

    2004-01-01

    To clarify the nature of chromosome sub-bands in more detail, the multicolor banding (MCB) probe-set for chromosome 5 was hybridized to normal metaphase spreads of GTG band levels at approximately 850, approximately 550, approximately 400 and approximately 300. It could be observed that as the chromosomes became shorter, more of the initial 39 MCB pseudo-colors disappeared, ending with 18 MCB pseudo-colored bands at the approximately 300-band level. The hierarchically organized splitting of bands into sub-bands was analyzed by comparing the disappearance or appearance of pseudo-color bands of the four different band levels. The regions to split first are telomere-near, centromere-near and in 5q23-->q31, followed by 5p15, 5p14, and all GTG dark bands in 5q apart from 5q12 and 5q32 and finalized by sub-band building in 5p15.2, 5q21.2-->q21.3, 5q23.1 and 5q34. The direction of band splitting towards the centromere or the telomere could be assigned to each band separately. Pseudo-colors assigned to GTG-light bands were resistant to band splitting. These observations are in concordance with the recently proposed concept of chromosome region-specific protein swelling. Copyright 2003 S. Karger AG, Basel

  16. Band gap effects of hexagonal boron nitride using oxygen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  17. Band gap effects of hexagonal boron nitride using oxygen plasma

    International Nuclear Information System (INIS)

    Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

    2014-01-01

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing

  18. Transport in bilayer and trilayer graphene: band gap engineering and band structure tuning

    Science.gov (United States)

    Zhu, Jun

    2014-03-01

    Controlling the stacking order of atomically thin 2D materials offers a powerful tool to control their properties. Linearly dispersed bands become hyperbolic in Bernal (AB) stacked bilayer graphene (BLG). Both Bernal (ABA) and rhombohedral (ABC) stacking occur in trilayer graphene (TLG), producing distinct band structures and electronic properties. A symmetry-breaking electric field perpendicular to the sample plane can further modify the band structures of BLG and TLG. In this talk, I will describe our experimental effort in these directions using dual-gated devices. Using thin HfO2 film deposited by ALD as gate dielectric, we are able to apply large displacement fields D > 6 V/nm and observe the opening and saturation of the field-induced band gap Eg in bilayer and ABC-stacked trilayer graphene, where the conduction in the mid gap changes by more than six decades. Its field and temperature dependence highlights the crucial role played by Coulomb disorder in facilitating hopping conduction and suppressing the effect of Eg in the tens of meV regime. In contrast, mid-gap conduction decreases with increasing D much more rapidly in clean h-BN dual-gated devices. Our studies also show the evolution of the band structure in ABA-stacked TLG, in particular the splitting of the Dirac-like bands in large D field and the signatures of two-band transport at high carrier densities. Comparison to theory reveals the need for more sophisticated treatment of electronic screening beyond self-consistent Hartree calculations to accurately predict the band structures of trilayer graphene and graphenic materials in general.

  19. Knife-edge seal for vacuum bagging

    Science.gov (United States)

    Rauschl, J. A.

    1980-01-01

    Cam actuated clamps pinch bagging material between long knife edge (mounted to clamps) and high temperature rubber cushion bonded to baseplate. No adhesive, tape, or sealing groove is needed to seal edge of bagging sheet against base plate.

  20. Environmental Dataset Gateway (EDG) REST Interface

    Data.gov (United States)

    U.S. Environmental Protection Agency — Use the Environmental Dataset Gateway (EDG) to find and access EPA's environmental resources. Many options are available for easily reusing EDG content in other...

  1. Organizing on the Edge: Appreciation and Critique

    National Research Council Canada - National Science Library

    Scott, W. R

    2006-01-01

    .... Hayes, "Power to the Edge: Command, Control in the Information Age" (2003). The author places the "edge" perspective in the broader context of organizational studies, noting both its strengths and limitations...

  2. Edge effect on weevils and spiders

    Directory of Open Access Journals (Sweden)

    R. Horváth

    2002-05-01

    Full Text Available The edge effect on weevils and spiders was tested along oak forest – meadow transects using sweep-net samples at the Síkfökút Project in Hungary. For spiders the species richness was significantly higher in the forest edge than either in the meadow or the forest interior. For weevils the species richness of the forest edge was higher than that of the meadow, but the difference was not statistically significant whereas the species richness of the forest interior was significantly lower than that of the forest edge and the meadow. The composition of the spider assemblage of the edge was more similar to the forest, while the composition of weevils in the edge was more similar to the meadow. Our results based on two invertebrate groups operating on different trophic levels suggest that there is a significant edge effect for the studied taxa resulting in higher species richness in the edge.

  3. Itinerant ferromagnetism in the narrow band limit

    CERN Document Server

    Liu, S H

    2000-01-01

    It is shown that in the narrow band, strong interaction limit the paramagnetic state of an itinerant ferromagnet is described by the disordered local moment state. As a result, the Curie temperature is orders of magnitude lower than what is expected from the large exchange splitting of the spin bands. An approximate analysis has also been carried out for the partially ordered state, and the result explains the temperature evolvement of the magnetic contributions to the resistivity and low-energy optical conductivity of CrO sub 2.

  4. One-dimensional metallic edge states in MoS2

    DEFF Research Database (Denmark)

    Bollinger, Mikkel; Lauritsen, J.V.; Jacobsen, Karsten Wedel

    2001-01-01

    By the use of density functional calculations it is shown that the edges of a two-dimensional slab of insulating MoS2 exhibit several metallic states. These edge states can be viewed as one-dimensional conducting wires, and we show that they can be observed directly using scanning tunneling...

  5. Edge Recycling and Heat Fluxes in L- and H-mode NSTX Plasmas

    International Nuclear Information System (INIS)

    Soukhanovskii, V.A.; Maingi, R.; Raman, R.; Kugel, H.; LeBlanc, B.; Roquemore, A.L.; Lasnier, C.J.

    2003-01-01

    Introduction Edge characterization experiments have been conducted in NSTX to provide an initial survey of the edge particle and heat fluxes and their scaling with input power and electron density. The experiments also provided a database of conditions for the analyses of the NSTX global particle sources, core fueling, and divertor operating regimes

  6. Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

    DEFF Research Database (Denmark)

    Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

    2009-01-01

    Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

  7. Electronic transport properties of Ti-impurity band in Si

    Energy Technology Data Exchange (ETDEWEB)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I [Departamento de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias, Fisicas, Universidad Complutense, E-28040 Madrid (Spain)

    2009-04-21

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  8. Electronic transport properties of Ti-impurity band in Si

    International Nuclear Information System (INIS)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I

    2009-01-01

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  9. Closure of large wounds using rubber bands in rabbits

    Directory of Open Access Journals (Sweden)

    Maria Angélica Baron Magalhães

    Full Text Available OBJECTIVE: to verify the effectiveness of the rubber elastic band in the treatment of large wounds of the body wall of rabbits by means of traction of its edges. METHODS: we studied 30 New Zealand rabbits, divided into three groups (n=10: Group 1- healing by secondary intention; Group 2- removal and eutopic repositioning of skin as full thickness skin graft; Group 3- Approximation of wound edges with elastic rubber band. In all animals, we removed a segment of the back skin and subcutaneous tissue down to the fascia, in accordance with an acrylic mold of 8cm long by 12cm wide. All animals were observed for 21 days. RESULTS: two animals of groups 1 and 2 had wound abscess. In Group 2, there was partial or total graft loss in 90% of animals. The complete closure of the wounds was observed in four animals of Group 1, six of Group 2 and eight of Group 3. There was no difference between the scar resistance values of groups 2 and 3, which were higher than those in Group 1. The scars of the three groups were characterized by the presence of mature connective tissue mixed with blood vessels and inflammatory infiltration, predominantly polymorphonuclear. CONCLUSION: the tensile strength of the wound edges with rubber elastic band is as efficient as the skin graft to treat rabbits' large body wounds.

  10. The electronic band parameters calculated by the Kronig-Penney method for Cd1-xZnxS quantum dot superlattices

    International Nuclear Information System (INIS)

    Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

    2009-01-01

    This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.

  11. Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

    Science.gov (United States)

    Thiel, Charles Warren

    There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence

  12. Cleaved-edge-overgrowth nanogap electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Luber, Sebastian M; Bichler, Max; Abstreiter, Gerhard; Tornow, Marc, E-mail: m.tornow@tu-bs.de [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, 85748 Garching (Germany)

    2011-02-11

    We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 M{Omega} range with k{Omega} lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

  13. Cleaved-edge-overgrowth nanogap electrodes.

    Science.gov (United States)

    Luber, Sebastian M; Bichler, Max; Abstreiter, Gerhard; Tornow, Marc

    2011-02-11

    We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 MΩ range with kΩ lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

  14. Edge localized modes control: experiment and theory

    International Nuclear Information System (INIS)

    Becoulet, M.; Huysmans, G.; Thomas, P.; Joffrin, E.; Rimini, F.; Monier-Garbet, P.; Grosman, A.; Ghendrih, P.; Parail, V.; Lomas, P.; Matthews, G.; Wilson, H.; Gryaznevich, M.; Counsell, G.; Loarte, A.; Saibene, G.; Sartori, R.; Leonard, A.; Snyder, P.; Evans, T.; Gohil, P.; Moyer, R.; Kamada, Y.; Oyama, N.; Hatae, T.; Kamiya, K.; Degeling, A.; Martin, Y.; Lister, J.; Rapp, J.; Perez, C.; Lang, P.; Chankin, A; Eich, T.; Sips, A.; Stober, J.; Horton, L.; Kallenbach, A.; Suttrop, W.; Saarelma, S.; Cowley, S.; Loennroth, J.; Shimada, M.; Polevoi, A.; Federici, G.

    2005-01-01

    The paper reviews recent theoretical and experimental results focussing on the identification of the key factors controlling ELM energy and particle losses both in natural ELMs and in the presence of external controlling mechanisms. Present experiment and theory pointed out the benefit of the high plasma shaping, high q 95 and high pedestal density in reducing the ELM affected area and conductive energy losses in Type I ELMs. Small benign ELMs regimes in present machines (EDA, HRS, Type II, Grassy, QH, Type III in impurity seeded discharges at high δ ) and their relevance for ITER are reviewed. Recent studies of active control of ELMs using stochastic boundaries, small pellets and edge current generation are presented

  15. Reduction in pediatric identification band errors: a quality collaborative.

    Science.gov (United States)

    Phillips, Shannon Connor; Saysana, Michele; Worley, Sarah; Hain, Paul D

    2012-06-01

    Accurate and consistent placement of a patient identification (ID) band is used in health care to reduce errors associated with patient misidentification. Multiple safety organizations have devoted time and energy to improving patient ID, but no multicenter improvement collaboratives have shown scalability of previously successful interventions. We hoped to reduce by half the pediatric patient ID band error rate, defined as absent, illegible, or inaccurate ID band, across a quality improvement learning collaborative of hospitals in 1 year. On the basis of a previously successful single-site intervention, we conducted a self-selected 6-site collaborative to reduce ID band errors in heterogeneous pediatric hospital settings. The collaborative had 3 phases: preparatory work and employee survey of current practice and barriers, data collection (ID band failure rate), and intervention driven by data and collaborative learning to accelerate change. The collaborative audited 11377 patients for ID band errors between September 2009 and September 2010. The ID band failure rate decreased from 17% to 4.1% (77% relative reduction). Interventions including education of frontline staff regarding correct ID bands as a safety strategy; a change to softer ID bands, including "luggage tag" type ID bands for some patients; and partnering with families and patients through education were applied at all institutions. Over 13 months, a collaborative of pediatric institutions significantly reduced the ID band failure rate. This quality improvement learning collaborative demonstrates that safety improvements tested in a single institution can be disseminated to improve quality of care across large populations of children.

  16. Mesoscale ionospheric electrodynamics of omega bands determined from ground-based electromagnetic and satellite optical observations

    Directory of Open Access Journals (Sweden)

    O. Amm

    2005-02-01

    Full Text Available We present ground-based electromagnetic data from the MIRACLE and BEAR networks and satellite optical observations from the UVI and PIXIE instruments on the Polar satellite of an omega band event over Northern Scandinavia on 26 June 1998, which occured close to the morning side edge of a substorm auroral bulge. Our analysis of the data concentrates on one omega band period from 03:18-03:27 UT, for which we use the method of characteristics combined with an analysis of the UVI and PIXIE data to derive a time series of instantaneous, solely data-based distributions of the mesoscale ionospheric electrodynamic parameters with a 1-min time resolution. In addition, the AMIE method is used to derive global Hall conductance patterns. Our results show that zonally alternating regions of enhanced ionospheric conductances ("tongues" up to ~60S and low conductance regions are associated with the omega bands. The tongues have a poleward extension of ~400km from their base and a zonal extension of ~380km. While they are moving coherently eastward with a velocity of ~770ms-1, the structures are not strictly stationary. The current system of the omega band can be described as a superposition of two parts: one consists of anticlockwise rotating Hall currents around the tongues, along with Pedersen currents, with a negative divergence in their centers. The sign of this system is reversing in the low conductance areas. It causes the characteristic ground magnetic signature. The second part consists of zonally aligned current wedges of westward flowing Hall currents and is mostly magnetically invisible below the ionosphere. This system dominates the field-aligned current (FAC pattern and causes alternating upward and downward FAC at the flanks of the tongues with maximum upward FAC of ~25µA m-2. The total FAC of ~2MA are comparable to the ones diverted inside a westward traveling surge. Throughout the event, the overwhelming part of the FAC are associated with

  17. Mesoscale ionospheric electrodynamics of omega bands determined from ground-based electromagnetic and satellite optical observations

    Directory of Open Access Journals (Sweden)

    O. Amm

    2005-02-01

    Full Text Available We present ground-based electromagnetic data from the MIRACLE and BEAR networks and satellite optical observations from the UVI and PIXIE instruments on the Polar satellite of an omega band event over Northern Scandinavia on 26 June 1998, which occured close to the morning side edge of a substorm auroral bulge. Our analysis of the data concentrates on one omega band period from 03:18-03:27 UT, for which we use the method of characteristics combined with an analysis of the UVI and PIXIE data to derive a time series of instantaneous, solely data-based distributions of the mesoscale ionospheric electrodynamic parameters with a 1-min time resolution. In addition, the AMIE method is used to derive global Hall conductance patterns. Our results show that zonally alternating regions of enhanced ionospheric conductances ("tongues" up to ~60S and low conductance regions are associated with the omega bands. The tongues have a poleward extension of ~400km from their base and a zonal extension of ~380km. While they are moving coherently eastward with a velocity of ~770ms-1, the structures are not strictly stationary. The current system of the omega band can be described as a superposition of two parts: one consists of anticlockwise rotating Hall currents around the tongues, along with Pedersen currents, with a negative divergence in their centers. The sign of this system is reversing in the low conductance areas. It causes the characteristic ground magnetic signature. The second part consists of zonally aligned current wedges of westward flowing Hall currents and is mostly magnetically invisible below the ionosphere. This system dominates the field-aligned current (FAC pattern and causes alternating upward and downward FAC at the flanks of the tongues with maximum upward FAC of ~25µA m-2. The total FAC of ~2MA are comparable to the ones diverted inside a westward traveling surge. Throughout the event, the overwhelming part of the FAC

  18. CFAR Edge Detector for Polarimetric SAR Images

    DEFF Research Database (Denmark)

    Schou, Jesper; Skriver, Henning; Nielsen, Allan Aasbjerg

    2003-01-01

    Finding the edges between different regions in an image is one of the fundamental steps of image analysis, and several edge detectors suitable for the special statistics of synthetic aperture radar (SAR) intensity images have previously been developed. In this paper, a new edge detector for polar...

  19. Energetics of highly kinked step edges

    NARCIS (Netherlands)

    Zandvliet, Henricus J.W.

    2010-01-01

    We have determined the step edge free energy, the step edge stiffness and dimensionless inverse step edge stiffness of the highly kinked < 010> oriented step on a (001) surface of a simple square lattice within the framework of a solid-on-solid model. We have found an exact expression for the step

  20. Acyclicity in edge-colored graphs

    DEFF Research Database (Denmark)

    Gutin, Gregory; Jones, Mark; Sheng, Bin

    2017-01-01

    A walk W in edge-colored graphs is called properly colored (PC) if every pair of consecutive edges in W is of different color. We introduce and study five types of PC acyclicity in edge-colored graphs such that graphs of PC acyclicity of type i is a proper superset of graphs of acyclicity of type...

  1. Imaging of Coulomb-Driven Quantum Hall Edge States

    KAUST Repository

    Lai, Keji

    2011-10-01

    The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν=2 QHE state. © 2011 American Physical Society.

  2. Conduct disorders.

    Science.gov (United States)

    Buitelaar, Jan K; Smeets, Kirsten C; Herpers, Pierre; Scheepers, Floor; Glennon, Jeffrey; Rommelse, Nanda N J

    2013-02-01

    Conduct disorder (CD) is a frequently occurring psychiatric disorder characterized by a persistent pattern of aggressive and non-aggressive rule breaking antisocial behaviours that lead to considerable burden for the patients themselves, their family and society. This review paper updates diagnostic and therapeutic approaches to CD in the light of the forthcoming DSM-5 definition. The diagnostic criteria for CD will remain unchanged in DSM-5, but the introduction of a specifier of CD with a callous-unemotional (CU) presentation is new. Linked to this, we discuss the pros and cons of various other ways to subtype aggression/CD symptoms. Existing guidelines for CD are, with few exceptions, already of a relatively older date and emphasize that clinical assessment should be systematic and comprehensive and based on a multi-informant approach. Non-medical psychosocial interventions are recommended as the first option for the treatment of CD. There is a role for medication in the treatment of comorbid syndromes and/or in case of insufficient response to psychosocial interventions and severe and dangerous aggressive and violent behaviours.

  3. Hybrid functional band gap calculation of SnO{sub 6} containing perovskites and their derived structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyewon [Department of Physics, Pusan National University, Pusan 609-735, Republic of South Korea (Korea, Republic of); Cheong, S.W. [Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Kim, Bog G., E-mail: boggikim@pusan.ac.kr [Department of Physics, Pusan National University, Pusan 609-735, Republic of South Korea (Korea, Republic of)

    2015-08-15

    We have studied the properties of SnO{sub 6} octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO{sub 6} containing perovskites. We also have expended the hybrid density functional calculation to the ASnO{sub 3}/A'SnO{sub 3} system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO{sub 6} containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO{sub 3} for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO{sub 6} octahedrons are plotted as polyhedron. (b) Band gap of ASnO{sub 3} as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO{sub 3}/A'SnO{sub 3} superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO{sub 3}, [001] ordered superlattices, and [111] ordered superlattices of ASnO{sub 3}/A'SnO{sub 3} as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO{sub 3} and ASnO{sub 3}/A'SnO{sub 3}. • The band gap of ASnO{sub 3} using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap.

  4. Resonant photoelectron spectroscopy at the Mo 4p→4d absorption edge in MoS2

    International Nuclear Information System (INIS)

    Lince, J.R.; Didziulis, S.V.; Yarmoff, J.A.

    1991-01-01

    A systematic study has been conducted of the resonant behavior of the valence-band photoelectron spectrum of MoS 2 for hν=26--70 eV, spanning the Mo 4p→4d transition region. A broad Fano-like resonance appears at ∼42 eV in the constant-initial-state (CIS) intensity plot of the d z 2 peak near the valence-band maximum [∼2 eV binding energy (BE)], confirming its predominantly Mo 4d character. A second shoulder on the higher-hν side of the maximum in the d z 2 CIS intensity plot is suggested to result from transitions to unoccupied states in the 5sp band ∼10 eV above E F , by comparison with a partial-yield spectrum and previous inverse-photoemission data. The region of the valence band in the range 3--4.5-eV BE also exhibits resonant behavior, indicating Mo 4d character, although somewhat less than for the d z 2 peak. The 5--7-eV BE range does not exhibit resonance behavior at the Mo 4p edge and, therefore, contains negligible Mo 4d character. A feature at ∼30 eV in the CIS intensity plot for the 5--7-eV BE range could not be definitively assigned in this study, but may be due to a resonance between direct photoemission and a process involving absorption and autoionization of electronic states that contain Mo 5s and 5p character

  5. Noise exposure in marching bands

    Science.gov (United States)

    Keefe, Joseph

    2005-09-01

    Previous studies involving orchestras have shown that music ensembles can produce hazardous noise levels. There are no similar data for marching bands and pep bands. In order to evaluate the noise levels produced by marching and pep bands, 1/3-octave-band sound-pressure levels were measured while these groups rehearsed and performed. Data were collected while marching with the bands to ensure a realistic environment. Comparing these data to OSHA and NIOSH criteria, marching and pep band exposures often exceed safe values. For typical exposures, OSHA doses range from 11% to 295%, while NIOSH doses range from 35% to 3055%. Exposures that would be considered hazardous in the workplace are common in marching and pep bands; students and band directors should take steps to recognize the risk posed by various instruments and various locations, and should implement hearing conservation efforts.

  6. Edge and coupled core/edge transport modelling in tokamaks

    International Nuclear Information System (INIS)

    Lodestro, L.L.; Casper, T.A.; Cohen, R.H.

    1999-01-01

    Recent advances in the theory and modelling of tokamak edge, scrape-off-layer (SOL) and divertor plasmas are described. The effects of the poloidal E x B drift on inner/outer divertor-plate asymmetries within a 1D analysis are shown to be in good agreement with experimental trends; above a critical v ExB , the model predicts transitions to supersonic flow at the inboard midplane. 2D simulations show the importance of E x B flow in the private-flux region and of ∇ B-drifts. A theory of rough plasma-facing surfaces is given, predicting modifications to the SOL plasma. The parametric dependence of detached-plasma states in slab geometry has been explored; with sufficient pumping, the location of the ionization front can be controlled; otherwise only fronts near the plate or the X-point are stable. Studies with a more accurate Monte-Carlo neutrals model and a detailed non-LTE radiation-transport code indicate various effects are important for quantitative modelling. Detailed simulations of the DIII-D core and edge are presented; impurity and plasma flow are discussed and shown to be well modelled with UEDGE. (author)

  7. Edge and coupled core-edge transport modelling in tokamaks

    International Nuclear Information System (INIS)

    Lodestro, L.L.; Casper, T.A.; Cohen, R.H.

    2001-01-01

    Recent advances in the theory and modelling of tokamak edge, scrape-off-layer (SOL) and divertor plasmas are described. The effects of the poloidal ExB drift on inner/outer divertor-plate asymmetries within a 1D analysis are shown to be in good agreement with experimental trends; above a critical v ExB, the model predicts transitions to supersonic SOL flow at the inboard midplane. 2D simulations show the importance of ExB flow in the private-flux region and of ∇ B-drifts. A theory of rough plasma-facing surfaces is given, predicting modifications to the SOL plasma. The parametric dependence of detached-plasma states in slab geometry has been explored; with sufficient pumping, the location of the ionization front can be controlled; otherwise only fronts near the plate or the X-point are stable. Studies with a more accurate Monte-Carlo neutrals model and a detailed non-LTE radiation-transport code indicate various effects are important for quantitative modelling. Detailed simulations of the DIII-D core and edge are presented; impurity and plasma flow are discussed and shown to be well modelled with UEDGE. (author)

  8. Low-loss transmission band in photonic crystal waveguides with sharp cutoff at a frequency below the bandgap

    NARCIS (Netherlands)

    Krüger, A.C.; Zhang, M.; Groothoff, N.; Malureanu, R.; Kristensen, M.

    2011-01-01

    We present TE transmission measurements of photonic crystal waveguides with high hole radius to period ratio r/¿ = 0.388. This geometry introduces a unique low loss transmission band in addition to the traditional PhC guiding band and very sharp transmission edges for devices with a length of 50 µm

  9. A constricted quantum Hall system as a beam-splitter: understanding ballistic transport on the edge

    International Nuclear Information System (INIS)

    Lal, Siddhartha

    2007-09-01

    We study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained from a Landauer- Buttiker analysis as arising from the splitting of edge current caused by the difference in the filling fractions of the bulk (ν 1 ) and constriction(ν 2 ) quantum Hall fluid regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model. The constriction region splits the incident long-wavelength chiral edge density-wave excitations among the transmitting and reflecting edge states encircling it. These findings provide satisfactory explanations for several puzzling recent experimental results. These results are confirmed by computing various correlators and chiral linear conductances of the system. In this way, our results find excellent agreement with some of the recent puzzling experimental results for the cases of ν 1 = 1/3, 1. (author)

  10. Majorana flat bands in anisotropic systems

    Energy Technology Data Exchange (ETDEWEB)

    Mendler, Daniel; Kotetes, Panagiotis; Schoen, Gerd [Institut fuer theoretische Festkoerperphysik, Karlsruher Institut fuer Technologie (Germany)

    2015-07-01

    It has been recently proposed that topologically protected Majorana flat bands (MFBs) emerge in superconductors with nodal energy spectrum. In this work we introduce a new class of gapful superconductors, in which MFBs can occur due to strong anisotropy. The prototype system exhibiting this kind of behavior is the nematic p{sub x}+p{sub y} spinless superconductor, which supports an edge MFB with controllable bandwidth. Our proposal can be for instance experimentally implemented in topological superconductors engineered from i. semiconductors with tunable spin-orbit coupling or ii. topological insulator surfaces with intrinsic magnetic order in proximity to a conventional SC. By investigating the topological properties of both setups, we show that their unique features render them feasible platforms for manipulating the Majorana fermion bandstructure and realizing MFBs.

  11. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    Science.gov (United States)

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  12. Phonon transmission and thermal conductance in one-dimensional system with on-site potential disorder

    International Nuclear Information System (INIS)

    Ma Songshan; Xu Hui; Deng Honggui; Yang Bingchu

    2011-01-01

    The role of on-site potential disorder on phonon transmission and thermal conductance of one-dimensional system is investigated. We found that the on-site potential disorder can lead to the localization of phonons, and has great effect on the phonon transmission and thermal conductance of the system. As on-site potential disorder W increases, the transmission coefficients decrease, and approach zero at the band edges. Corresponding, the thermal conductance decreases drastically, and the curves for thermal conductance exhibit a series of steps and plateaus. Meanwhile, when the on-site potential disorder W is strong enough, the thermal conductance decreases dramatically with the increase of system size N. We also found that the efficiency of reducing thermal conductance by increasing the on-site potential disorder strength is much better than that by increasing the on-site potential's amplitude. - Highlights: → We studied the effect of on-site potential disorder on thermal transport. → Increasing disorder will decrease thermal transport. → Increasing system size will also decrease its thermal conductance. → Increasing disorder is more efficient than other in reducing thermal conductance.

  13. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  14. Image Edge Tracking via Ant Colony Optimization

    Science.gov (United States)

    Li, Ruowei; Wu, Hongkun; Liu, Shilong; Rahman, M. A.; Liu, Sanchi; Kwok, Ngai Ming

    2018-04-01

    A good edge plot should use continuous thin lines to describe the complete contour of the captured object. However, the detection of weak edges is a challenging task because of the associated low pixel intensities. Ant Colony Optimization (ACO) has been employed by many researchers to address this problem. The algorithm is a meta-heuristic method developed by mimicking the natural behaviour of ants. It uses iterative searches to find the optimal solution that cannot be found via traditional optimization approaches. In this work, ACO is employed to track and repair broken edges obtained via conventional Sobel edge detector to produced a result with more connected edges.

  15. K-edge densitometer (KED)

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, J.K.; Hansen, W.J.

    1993-02-11

    In 1979, a K-edge densitometer (KED) was installed by the Safeguards Assay group from Los Alamos National Laboratory in the PNC reprocessing plant at Tokai-mura, Japan. It uses an active nondestructive assay technique, KED, to measure the plutonium concentration of the product solution. The measurement uncertainty of an assay depends on the count time chosen, but can be 0.5% or better. The computer hardware and software were upgraded in 1992. This manual describes the operation of the instrument, with an emphasis on the user interface to the software.

  16. Instant Adobe Edge Inspect starter

    CERN Document Server

    Khan, Joseph

    2013-01-01

    Get to grips with a new technology, understand what it is and what it can do for you, and then get to work with the most important features and tasks. This easy-to-understand Starter guide will get you up to speed with Adobe Edge Inspect quickly and with little effort.This book is for frontend web developers and designers who are developing and testing web applications targeted for mobile browsers. It's assumed that you have a basic understanding of creating web applications using HTML, CSS, and JavaScript, as well as being familiar with running web pages from local HTTP servers. Readers are a

  17. MEDICAL IMAGE COMPRESSION USING HYBRID CODER WITH FUZZY EDGE DETECTION

    Directory of Open Access Journals (Sweden)

    K. Vidhya

    2011-02-01

    Full Text Available Medical imaging techniques produce prohibitive amounts of digitized clinical data. Compression of medical images is a must due to large memory space required for transmission and storage. This paper presents an effective algorithm to compress and to reconstruct medical images. The proposed algorithm first extracts edge information of medical images by using fuzzy edge detector. The images are decomposed using Cohen-Daubechies-Feauveau (CDF wavelet. The hybrid technique utilizes the efficient wavelet based compression algorithms such as JPEG2000 and Set Partitioning In Hierarchical Trees (SPIHT. The wavelet coefficients in the approximation sub band are encoded using tier 1 part of JPEG2000. The wavelet coefficients in the detailed sub bands are encoded using SPIHT. Consistent quality images are produced by this method at a lower bit rate compared to other standard compression algorithms. Two main approaches to assess image quality are objective testing and subjective testing. The image quality is evaluated by objective quality measures. Objective measures correlate well with the perceived image quality for the proposed compression algorithm.

  18. Electronic band structure of lithium, sodium and potassium fluorides

    International Nuclear Information System (INIS)

    Jouanin, C.; Albert, J.P.; Gout, C.

    1975-01-01

    A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

  19. How Forest Inhomogeneities Affect the Edge Flow

    DEFF Research Database (Denmark)

    Boudreault, Louis-Étienne; Dupont, Sylvain; Bechmann, Andreas

    2016-01-01

    Most of our knowledge on forest-edge flows comes from numerical and wind-tunnel experiments where canopies are horizontally homogeneous. To investigate the impact of tree-scale heterogeneities (>1 m) on the edge-flow dynamics, the flow in an inhomogeneous forest edge on Falster island in Denmark...... is investigated using large-eddy simulation. The three-dimensional forest structure is prescribed in the model using high resolution helicopter-based lidar scans. After evaluating the simulation against wind measurements upwind and downwind of the forest leading edge, the flow dynamics are compared between...... the scanned forest and an equivalent homogeneous forest. The simulations reveal that forest inhomogeneities facilitate flow penetration into the canopy from the edge, inducing important dispersive fluxes in the edge region as a consequence of the flow spatial variability. Further downstream from the edge...

  20. Energetics of edge oxidization of graphene nanoribbons

    Science.gov (United States)

    Yasuma, Airi; Yamanaka, Ayaka; Okada, Susumu

    2018-06-01

    On the basis of the density functional theory, we studied the geometries and energetics of O atoms adsorbed on graphene edges for simulating the initial stage of the edge oxidization of graphene. Our calculations showed that oxygen atoms are preferentially adsorbed onto the graphene edges with the zigzag portion, resulting in a large adsorption energy of about 5 eV. On the other hand, the edges with armchair shape are rarely oxidized, or the oxidization causes substantial structural reconstructions, because of the stable covalent bond at the armchair edge with the triple bond nature. Furthermore, the energetics sensitively depends on the edge angles owing to the inhomogeneity of the charge density at the edge atomic sites.

  1. Haptic Edge Detection Through Shear

    Science.gov (United States)

    Platkiewicz, Jonathan; Lipson, Hod; Hayward, Vincent

    2016-03-01

    Most tactile sensors are based on the assumption that touch depends on measuring pressure. However, the pressure distribution at the surface of a tactile sensor cannot be acquired directly and must be inferred from the deformation field induced by the touched object in the sensor medium. Currently, there is no consensus as to which components of strain are most informative for tactile sensing. Here, we propose that shape-related tactile information is more suitably recovered from shear strain than normal strain. Based on a contact mechanics analysis, we demonstrate that the elastic behavior of a haptic probe provides a robust edge detection mechanism when shear strain is sensed. We used a jamming-based robot gripper as a tactile sensor to empirically validate that shear strain processing gives accurate edge information that is invariant to changes in pressure, as predicted by the contact mechanics study. This result has implications for the design of effective tactile sensors as well as for the understanding of the early somatosensory processing in mammals.

  2. Photo field emission spectroscopy of the tantalum band structure

    International Nuclear Information System (INIS)

    Kleint, Ch.; Radon, T.

    1978-01-01

    Photo field emission (PFE) currents of clean and barium covered tantalum tips have been measured with single lines of the mercury arc spectrum and phase-sensitive detection. Field strength and work function were determined from Fowler-Nordheim plots of the FE currents. Shoulders in the PFE current-voltage characteristics could be correlated to transitions in the band structure of tantalum according to a recently proposed two-step PFE model. A comparison with the relativistic calculations of Mattheiss and the nonrelativistic bands of Petroff and Viswanathan shows that Mattheiss' bands are more appropriate. Beside direct transitions several nondirect transitions from the different features composing the upper two density of states maxima below the Fermi edge of tantalum have been found. (Auth.)

  3. Topological Magnon Bands in a Kagome Lattice Ferromagnet.

    Science.gov (United States)

    Chisnell, R; Helton, J S; Freedman, D E; Singh, D K; Bewley, R I; Nocera, D G; Lee, Y S

    2015-10-02

    There is great interest in finding materials possessing quasiparticles with topological properties. Such materials may have novel excitations that exist on their boundaries which are protected against disorder. We report experimental evidence that magnons in an insulating kagome ferromagnet can have a topological band structure. Our neutron scattering measurements further reveal that one of the bands is flat due to the unique geometry of the kagome lattice. Spin wave calculations show that the measured band structure follows from a simple Heisenberg Hamiltonian with a Dzyaloshinkii-Moriya interaction. This serves as the first realization of an effectively two-dimensional topological magnon insulator--a new class of magnetic material that should display both a magnon Hall effect and protected chiral edge modes.

  4. Streamwise counter-rotating vortices generated by triangular leading edge pattern in flat plate boundary layer

    KAUST Repository

    Hasheminejad, S. M.; Mitsudharmadi, Hatsari; Winoto, S. H.; Lua, K. B.; Low, H. T.

    2016-01-01

    A series of flow visualizations were conducted to qualitatively study the development of streamwise counter-rotating vortices over a flat plate induced by triangular patterns at the leading edge of a flat plate. The experiments were carried out

  5. Predicted Mobility Edges in One-Dimensional Incommensurate Optical Lattices: An Exactly Solvable Model of Anderson Localization

    International Nuclear Information System (INIS)

    Biddle, J.; Das Sarma, S.

    2010-01-01

    Localization properties of noninteracting quantum particles in one-dimensional incommensurate lattices are investigated with an exponential short-range hopping that is beyond the minimal nearest-neighbor tight-binding model. Energy dependent mobility edges are analytically predicted in this model and verified with numerical calculations. The results are then mapped to the continuum Schroedinger equation, and an approximate analytical expression for the localization phase diagram and the energy dependent mobility edges in the ground band is obtained.

  6. Electrosynthesis of ZnO nanorods and nanotowers: Morphology and X-ray Absorption Near Edge Spectroscopy studies

    Science.gov (United States)

    Sigircik, Gokmen; Erken, Ozge; Tuken, Tunc; Gumus, Cebrail; Ozkendir, Osman M.; Ufuktepe, Yuksel

    2015-06-01

    Deposition mechanism of nano-structured ZnO films has been investigated in the absence and presence of chloride ions from aqueous solution. The resulting opto-electronic properties were interpreted extensively, using X-ray diffraction (XRD), X-ray Absorption Near Edge Spectroscopy (XANES), field emission scanning electron microscopy (FE-SEM), UV-Visible spectroscopy and four probe techniques. The ZnO deposition is mass transport controlled process and the interaction of chloride ions with the surface has great influence on diffusion kinetics, considering the substantial species (Zn2+ and OH-) involved in the construction of ZnO film. This effect does not change major lattice parameters, as shown with detailed analysis of XRD data. However, the texture coefficient (Tc) (0 0 2) value is higher in presence of chloride ions containing synthesis solution which gave vertically aligned, well defined and uniformly dispersed nanorods structure. The calculated Eg values are in the range 3.28-3.41 eV and 3.22-3.31 eV for ZnO nanorods and nanotowers synthesized at different deposition periods, respectively. Furthermore, the charge mobility values regarding the deposition periods were measured to be in the ranges from 130.4 to 449.2 cm2 V-1 s-1 and 126.2 to 204.7 cm2 V-1 s-1 for nanorods and nanotowers, respectively. From XANES results, it was shown that the Zn K-edge spectrum is dominated by the transition of Zn 1s core electrons into the unoccupied Zn 4p states of the conduction band. Comparing the rod and tower nano-structured ZnO thin films, the excitation behavior of valence band electrons is different. Moreover, the density states of Zn 4p are higher for ZnO nanorods.

  7. Predicted solar cell edge radiation effects

    International Nuclear Information System (INIS)

    Gates, M.T.

    1993-01-01

    The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

  8. Robust and adaptive band-to-band image transform of UAS miniature multi-lens multispectral camera

    Science.gov (United States)

    Jhan, Jyun-Ping; Rau, Jiann-Yeou; Haala, Norbert

    2018-03-01

    Utilizing miniature multispectral (MS) or hyperspectral (HS) cameras by mounting them on an Unmanned Aerial System (UAS) has the benefits of convenience and flexibility to collect remote sensing imagery for precision agriculture, vegetation monitoring, and environment investigation applications. Most miniature MS cameras adopt a multi-lens structure to record discrete MS bands of visible and invisible information. The differences in lens distortion, mounting positions, and viewing angles among lenses mean that the acquired original MS images have significant band misregistration errors. We have developed a Robust and Adaptive Band-to-Band Image Transform (RABBIT) method for dealing with the band co-registration of various types of miniature multi-lens multispectral cameras (Mini-MSCs) to obtain band co-registered MS imagery for remote sensing applications. The RABBIT utilizes modified projective transformation (MPT) to transfer the multiple image geometry of a multi-lens imaging system to one sensor geometry, and combines this with a robust and adaptive correction (RAC) procedure to correct several systematic errors and to obtain sub-pixel accuracy. This study applies three state-of-the-art Mini-MSCs to evaluate the RABBIT method's performance, specifically the Tetracam Miniature Multiple Camera Array (MiniMCA), Micasense RedEdge, and Parrot Sequoia. Six MS datasets acquired at different target distances and dates, and locations are also applied to prove its reliability and applicability. Results prove that RABBIT is feasible for different types of Mini-MSCs with accurate, robust, and rapid image processing efficiency.

  9. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    Science.gov (United States)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  10. Wide band ENDOR spectrometer

    International Nuclear Information System (INIS)

    Mendonca Filho, C.

    1973-01-01

    The construction of an ENDOR spectrometer operating from 0,5 to 75 MHz within a single band, with ore Klystron and homodine detection, and no fundamental changes on the electron spin resonance spectrometer was described. The ENDOR signal can be detected both by amplitude modulation of the frequency field, or direct detection of the ESR output, which is taken to a signal analyser. The signal-to-noise ratio is raised by averaging rather than filtering avoiding the use of long time constants, providing natural line widths. The experimental apparatus and the spectra obtained are described. A discussion, relating the ENDOR line amplitudes with the experimental conditions is done and ENDOR mechanism, in which there is a relevant presence of cross relaxation is proposed

  11. Electronic band structure

    International Nuclear Information System (INIS)

    Grosso, G.

    1986-01-01

    The aim of this chapter is to present, in detail, some theoretical methods used to calculate electronic band structures in crystals. The basic strategies employed to attack the problem of electronic-structure calculations are presented. Successive sections present the basic formulations of the tight-binding, orthogonalized-plane-wave, Green'sfunction, and pseudopotential methods with a discussion of their application to perfect solids. Exemplifications in the case of a few selected problems provide further insight by the author into the physical aspects of the different methods and are a guide to the use of their mathematical techniques. A discussion is offered of completely a priori Hartree-Fock calculations and attempts to extend them. Special aspects of the different methods are also discussed in light of recently published related work

  12. Modeling cell elongation during germ band retraction: cell autonomy versus applied anisotropic stress

    International Nuclear Information System (INIS)

    Lynch, Holley E; Shane Hutson, M; Veldhuis, Jim; Wayne Brodland, G

    2014-01-01

    The morphogenetic process of germ band retraction in Drosophila embryos involves coordinated movements of two epithelial tissues—germ band and amnioserosa. The germ band shortens along its rostral–caudal or head-to-tail axis, widens along its perpendicular dorsal-ventral axis, and uncurls from an initial ‘U’ shape. The amnioserosa mechanically assists this process by pulling on the crook of the U-shaped germ band. The amnioserosa may also provide biochemical signals that drive germ band cells to change shape in a mechanically autonomous fashion. Here, we use a finite-element model to investigate how these two contributions reshape the germ band. We do so by modeling the response to laser-induced wounds in each of the germ band’s spatially distinct segments (T1–T3, A1–A9) during the middle of retraction when segments T1–A3 form the ventral arm of the ‘U’, A4–A7 form its crook, and A8–A9 complete the dorsal arm. We explore these responses under a range of externally applied stresses and internal anisotropy of cell edge tensions—akin to a planar cell polarity that can drive elongation of cells in a direction parallel to the minimum edge tension—and identify regions of parameter space (edge-tension anisotropy versus stress anisotropy) that best match previous experiments for each germ band segment. All but three germ band segments are best fit when the applied stress anisotropy and the edge-tension anisotropy work against one another—i.e., when the isolated effects would elongate cells in perpendicular directions. Segments in the crook of the germ band (A4–A7) have cells that elongate in the direction of maximum external stress, i.e., external stress anisotropy is dominant. In most other segments, the dominant factor is internal edge-tension anisotropy. These results are consistent with models in which the amnioserosa pulls on the crook of the germ band to mechanically assist retraction. In addition, they suggest a mechanical cue for

  13. Design of an Electronic Chest-Band

    Science.gov (United States)

    Atakan, R.; Acikgoz Tufan, H.; Baskan, H.; Eryuruk, S. H.; Akalin, N.; Kose, H.; Li, Y.; Kursun Bahadir, S.; Kalaoglu, F.

    2017-10-01

    In this study, an electronic chest strap prototype was designed for measuring fitness level, performance optimization, mobility and fall detection. Knitting technology is used for production by using highly elastic nylon yarn. In order to evaluate comfort performance of the garment, yarn strength and elongation, air permeability, moisture management and FAST tests (Fabric Assurance Fabric Testing) were carried out, respectively. After testing of textile part of the chest band, IMU sensors were integrated onto the garment by means of conductive yarns. Electrical conductivity of the circuit was also assessed at the end. Results indicated that the weight and the thickness of the product are relatively high for sports uses and it has a negative impact on comfort properties. However, it is highly stretchable and moisture management properties are still in acceptable values. From the perspective of possible application areas, developed smart chest band in this research could be used in sports facilities as well as health care applications for elderly and disabled people.

  14. Ethical decisions at the edge.

    Science.gov (United States)

    Gillett, Grant

    2008-05-01

    Medicine grows incrementally in its ability to treat patients and at the growing edge it poses problems about the appropriateness of treatments that are different from those where good practice conforms to widely agreed standards. The growth of access to medical knowledge and the diversity of contemporary theoretical and clinical medicine have spawned deep divisions in the profession and divergent opinions about what constitutes reasonable care. That hallmark of acceptable practice is also under pressures from the threat of litigation, a highly commercialised contemporary medical environment, patient demands based on medical journalism and the internet and the exponential growth of bio-medical technology. Patient empowerment can result in complaints arising in new and complex areas and expert opinion can often differ markedly depending on where on the medical spectrum the experts are aligned. This column lays out some broad-brush principles to assess the adequacy of medical advice in such a climate.

  15. Refractive index of ternary and quaternary compound semiconductors below the fundamental absorption edge: Linear and nonlinear effects

    International Nuclear Information System (INIS)

    Jensen, B.; Torabi, A.

    1985-01-01

    The index of refraction n is calculated as a function of frequency and mole fraction x for the following compounds: Hg/sub l-x/Cd/sub x/Te, Al/sub x/Ga/sub l-x/As, and In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ lattice matched to InP. Lattice matching of In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ to InP requires that x = 0.466 y. The theoretical result for the refractive index is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of the basic material parameters of band gap energy, effective electron mass m/sub n/, effective heavy hole mass m/sub rho/, spin orbit splitting energy, lattice constant, and carrier concentration n/sub e/ or rho for n-type or rho-type materials, respectively. If these quantities are known as functions of mole fraction x, there are no adjustable parameters involved. A negative change in the refractive index near the fundamental absorption edge is predicted on passing radiation through a crystal if the change in carrier concentration of the initially unoccupied conduction band is assumed proportional to internal intensity I. Comparison of theory with experimental data is given

  16. Correlation between fuel rack sticking and unintentional re-starting of EDG

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Cheol; Chung, Woo geun; Kang, Seung Hee; Kim, Myeong hoon [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    The Emergency Diesel Generator (EDG) was being tested after overhaul maintenance. While the EDG was running at the rated speed (450 rpm), an operator pressed the manual stop button. But the EDG failed to stop and unintentionally started again. After the unintentional re-start, the EDG maintained running speed of 340 rpm. In the category of a governing system, this paper analyzes the cause of unintentional restart of the EDG that unintentionally re-started and maintained a speed at 340 rpm. The results of the analysis were then verified by a test run. Finally, we identified a correlation between fuel rack sticking and unintentional re-starting of the EDG. An analysis was conducted to confirm the cause of an EDG which was unintentionally restarting and running at 340rpm (rated speed is 450 rpm). Through a test run, it was confirmed that the results of the analysis are correct. The cause of the EDG unintentionally restarting was that it still rotated at 55 rpm over the minimum starting speed at the moment when the shutdown cylinder stopped blocking the fuel, because of a stuck fuel rack at the R7 cylinder. At the same time, the fuel that had been supplied into the cylinders (combustion chamber) by the governing system exploded and the EDG restarted unintentionally.

  17. Electronic properties and relative stabilities of heterogeneous edge-decorated zigzag boron nitride nanoribbons

    International Nuclear Information System (INIS)

    Li, L.L.; Yu, X.F.; Yang, X.J.; Zhang, X.H.; Xu, X.W.; Jin, P.; Zhao, J.L.; Wang, X.X.; Tang, C.C.

    2015-01-01

    The wide band gap of boron nitride (BN) materials has been a major bottleneck for a wider application of BN in electronics. In this work, density functional theory computations were used to study the band structure of zigzag BN nanoribbons (BNNRs). Due to the ionic origin of the BN band gap, a heterogeneous edge decoration is an effective way to modulate the electronic band structure of BNNRs. This study demonstrates that a metallic behavior and magnetism can be realized by applying a NO 2 –NH 2 pair edge decoration. Although the lone electron pair of the NH 2 group is partly responsible for the metallic behavior, the effective potential difference induced by the donor–acceptor pair is also crucial for metallic behavior. Furthermore, these newly formed BNNRs were found to be more stable than H-passivated BNNRs. This simple chemical modification method offers great opportunities for the development of future BNNR-based electronic devices. - Graphical abstract: Due to the ionic origin of a BN band gap, heterogeneous edge decoration is an effective way to modulate its electronic structures. Metallicity and magnetism can be realized by NO 2 –NH 2 pair decoration. Although the N lone pair electrons in NH 2 group are responsible for the metallicity, the effective potential difference induced by a donor–acceptor pair is crucial for the formation of metallicity. - Highlights: • Heterogeneous edge decoration is effective for tuning BNNRs' electronic structures. • NO 2 –NH 2 pair decoration can lead to metallic behavior and magnetism for BNNRs. • The effective potential difference is crucial for the formation of metallicity. • NO 2 –NH 2 pair decorated BNNRs is more stable than H-passivated ones

  18. Explanation of L→H mode transition based on gradient stabilization of edge thermal fluctuations

    International Nuclear Information System (INIS)

    Stacey, W.M.

    1996-01-01

    A linear analysis of thermal fluctuations, using a fluid model which treats the large radial gradient related phenomena in the plasma edge, leads to a constraint on the temperature and density gradients for stabilization of edge temperature fluctuations. A temperature gradient, or conductive edge heat flux, threshold is identified. It is proposed that the L→H transition takes place when the conductive heat flux to the edge produces a sufficiently large edge temperature gradient to stabilize the edge thermal fluctuations. The consequences following from this mechanism for the L→H transition are in accord with observed phenomena associated with the L→H transition and with the observed parameter dependences of the power threshold. First, a constraint is established on the edge temperature and density gradients that are sufficient for the stability of edge temperature fluctuations. A slab approximation for the thin plasma edge and a fluid model connected to account for the large radial gradients present in the plasma edge are used. Equilibrium solutions are characterized by the value of the density and of its gradient L n -1 double-bond - n -1 , etc. Temperature fluctuations expanded about the equilibrium value are then used in the energy balance equation summed over plasma ions, electrons and impurities to obtain, after linearization, an expression for the growth rate ω of edge localized thermal fluctuations. Thermal stability of the equilibrium solution requires ω ≤ 0, which establishes a constraint that must be satisfied by L n -1 and L T -1 . The limiting value of the constraint (ω = 0) leads to an expression for the minimum value of that is sufficient for thermal stability, for a given value of L T -1. It is found that there is a minimum value of the temperature gradient, (L T -1 ) min that is necessary for a stable solution to exist for any value of L n -1

  19. Rippling modes in the edge of a tokamak plasma

    International Nuclear Information System (INIS)

    Carreras, B.A.; Callen, J.D.; Gaffney, P.W.; Hicks, H.R.

    1982-02-01

    A promising resistive magnetohydrodynamic candidate for the underlying cause of turbulence in the edge of a tokamak plasma is the rippling instability. In this paper we develop a computational model for these modes in the cylindrical tokamak approximation and explore the linear growth and single-helicity quasi-linear saturation phases of the rippling modes for parameters appropriate to the edge of a tokamak plasma. Large parallel heat conduction does not stabilize these modes; it only reduces their growth rate by a factor scaling as k/sub parallel//sup -4/3/. Nonlinearly, individual rippling modes are found to saturate by quasi-linear flattening of the resistivity profile. The saturated amplitude of the modes scales as m/sup -1/, and the radial extent of these modes grows linearly with time due to radial Vector E x Vector B 0 convection. This evolution is found to be terminated by parallel heat conduction

  20. Rippling modes in the edge of a tokamak plasma

    International Nuclear Information System (INIS)

    Carreras, B.A.; Gaffney, P.W.; Hicks, H.R.; Callan, J.D.

    1982-01-01

    A promising resistive magnetohydrodynamic candidate for the underlying cause of turbulence in the edge of a tokamak plasma is the rippling instability. In this paper a computational model for these modes in the cylindrical tokamak approximation was developed and the linear growth and single-helicity quasi-linear saturation phases of the rippling modes for parameters appropriate to the edge of a tokamak plasma were explored. Large parallel heat conduction does not stabilize these modes; it only reduces their growth rate by a factor sacling as K/sup -4/3//sub parallel/. Nonlinearly, individual rippling modes are found to saturate by quasi-linear flattening of the resistivity profile. The saturated amplitude of the modes scales as m -1 , and the radial extent of these modes grows linearly with time due to radial E x B 0 convection. This evolution is found to be terminated by parallel heat conduction

  1. Magnetohydrodynamic stability of tokamak edge plasmas

    International Nuclear Information System (INIS)

    Connor, J.W.; Hastie, R.J.; Wilson, H.R.; Miller, R.L.

    1998-01-01

    A new formalism for analyzing the magnetohydrodynamic stability of a limiter tokamak edge plasma is developed. Two radially localized, high toroidal mode number n instabilities are studied in detail: a peeling mode and an edge ballooning mode. The peeling mode, driven by edge current density and stabilized by edge pressure gradient, has features which are consistent with several properties of tokamak behavior in the high confinement open-quotes Hclose quotes-mode of operation, and edge localized modes (or ELMs) in particular. The edge ballooning mode, driven by the pressure gradient, is identified; this penetrates ∼n 1/3 rational surfaces into the plasma (rather than ∼n 1/2 , expected from conventional ballooning mode theory). Furthermore, there exists a coupling between these two modes and this coupling provides a picture of the ELM cycle

  2. Role of edge effect on small mammal populations in a forest fragment

    International Nuclear Information System (INIS)

    Wike, L.D.

    2000-01-01

    In many cases, edge effect may determine the distribution and densities of small mammal populations. In 1995 and 1998, a mark and recapture study was conducted at the Savannah River Site (SRS), Aiken, SC, to evaluate the role of forest edge habitat. The area studied was an abandoned home site that had been recently isolated by a timber harvest. Harvest activities left a distinct edge of old field and planted pine contrasting with a relatively xeric, mixed hardwood stand. Trapping was conducted for 17 days in 1995 and 14 days in 1998. Three 30 m by 150 m grids were placed in the clear-cut, edge, and hardwood interior habitats. For both years the principal species captured were Peromyscus gossypinus, P. polionotus, and Neotoma floridana. The edge habitat accounted for approximately 55 percent of all captures and nearly four times as many recaptures as the interior and clear-cut habitats. In 1998, greater numbers of N. floridana were trapped than in 1995. The results indicate that the use of edge habitat can be pronounced even within simple communities. Stewards of managed or restored habitats need to carefully consider the role of edge in these systems. In managed areas such as waste sites, movement of material within the food chain could be reduced by minimizing edge habitat around the points of contamination

  3. The influence of anthropogenic edge effects on primate populations and their habitat in a fragmented rainforest in Costa Rica.

    Science.gov (United States)

    Bolt, Laura M; Schreier, Amy L; Voss, Kristofor A; Sheehan, Elizabeth A; Barrickman, Nancy L; Pryor, Nathaniel P; Barton, Matthew C

    2018-05-01

    When a forest is fragmented, this increases the amount of forest edge relative to the interior. Edge effects can lead to loss of animal and plant species and decreased plant biomass near forest edges. We examined the influence of an anthropogenic forest edge comprising cattle pasture, coconut plantations, and human settlement on the mantled howler (Alouatta palliata), white-faced capuchin (Cebus capucinus), Central American spider monkey (Ateles geoffroyi), and plant populations at La Suerte Biological Research Station (LSBRS), Costa Rica. We predicted that there would be lower monkey encounter rate, mean tree species richness, and diameter at breast height (DBH) in forest edge versus interior, and that monkeys would show species-specific responses to edge based on diet, body size, and canopy height preferences. Specifically, we predicted that howler monkeys would show positive or neutral edge effects due to their flexible folivorous diet, large body size, and preference for high canopy, capuchins would show positive edge effects due to their diverse diet, small body size, and preference for low to middle canopy, and spider monkeys would show negative edge effects due their reliance on ripe fruit, large body size, and preference for high upper canopy. We conducted population and vegetation surveys along edge and interior transects at LSBRS. Contrary to predictions, total monkey encounter rate did not vary between the forest edge and forest interior. Furthermore, all three species showed neutral edge effects with no significant differences in encounter rate between forest edge and interior. Interior transects had significantly higher mean tree species richness than edge transects, and interior trees had greater DBH than edge trees, although this difference was not significant. These results suggest that forest edges negatively impact plant populations at La Suerte but that the monkeys are able to withstand these differences in vegetation.

  4. Edge and line detection of complicated and blurred objects

    OpenAIRE

    Haugsdal, Kari

    2010-01-01

    This report deals with edge and line detection in pictures with complicated and/or blurred objects. It explores the alternatives available, in edge detection, edge linking and object recognition. Choice of methods are the Canny edge detection and Local edge search processing combined with regional edge search processing in the form of polygon approximation.

  5. Study of airfoil trailing edge bluntness noise

    DEFF Research Database (Denmark)

    Zhu, Wei Jun; Shen, Wen Zhong; Sørensen, Jens Nørkær

    2010-01-01

    This paper deals with airfoil trailing edge noise with special focus on airfoils with blunt trailing edges. Two methods are employed to calculate airfoil noise: The flow/acoustic splitting method and the semi-empirical method. The flow/acoustic splitting method is derived from compressible Navier...... design or optimization. Calculations from both methods are compared with exist experiments. The airfoil blunt noise is found as a function of trailing edge bluntness, Reynolds number, angle of attack, etc....

  6. Selective Electroless Silver Deposition on Graphene Edges

    DEFF Research Database (Denmark)

    Durhuus, D.; Larsen, M. V.; Andryieuski, Andrei

    2015-01-01

    We demonstrate a method of electroless selective silver deposition on graphene edges or between graphene islands without covering the surface of graphene. Modifications of the deposition recipe allow for decoration of graphene edges with silver nanoparticles or filling holes in damaged graphene...... on silica substrate and thus potentially restoring electric connectivity with minimal influence on the overall graphene electrical and optical properties. The presented technique could find applications in graphene based transparent conductors as well as selective edge functionalization and can be extended...

  7. Discursive Maps at the Edge of Chaos

    Science.gov (United States)

    2017-05-25

    Discursive Maps at the Edge of Chaos A Monograph by Major Mathieu Primeau Canadian Army, Royal Canadian Engineer School of Advanced Military...Master’s Thesis 3. DATES COVERED (From - To) JUN 2016 – MAY 2017 4. TITLE AND SUBTITLE Discursive Maps at the Edge of Chaos 5a. CONTRACT NUMBER 5b...meaning of boundaries and polarize conflict towards violence. The edge of chaos is the fine line between disorder and coherence. Discursive maps

  8. Edge effect on weevils and spiders

    OpenAIRE

    Horváth, R.; Magura, T.; Péter, G.; Tóthmérész, B.

    2002-01-01

    The edge effect on weevils and spiders was tested along oak forest – meadow transects using sweep-net samples at the Síkfökút Project in Hungary. For spiders the species richness was significantly higher in the forest edge than either in the meadow or the forest interior. For weevils the species richness of the forest edge was higher than that of the meadow, but the difference was not statistically significant whereas the species richness of the forest...

  9. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  10. Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Science.gov (United States)

    Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

    2018-05-01

    Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

  11. Tunneling between edge states in a quantum spin Hall system.

    Science.gov (United States)

    Ström, Anders; Johannesson, Henrik

    2009-03-06

    We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

  12. Moveable Leading Edge Device for a Wing

    Science.gov (United States)

    Pitt, Dale M. (Inventor); Eckstein, Nicholas Stephen (Inventor)

    2013-01-01

    A method and apparatus for managing a flight control surface system. A leading edge section on a wing of an aircraft is extended into a deployed position. A deformable section connects the leading edge section to a trailing section. The deformable section changes from a deformed shape to an original shape when the leading edge section is moved into the deployed position. The leading edge section on the wing is moved from the deployed position to an undeployed position. The deformable section changes to the deformed shape inside of the wing.

  13. Visible imaging of edge turbulence in NSTX

    International Nuclear Information System (INIS)

    Zweben, S.; Maqueda, R.; Hill, K.; Johnson, D.

    2000-01-01

    Edge plasma turbulence in tokamaks and stellarators is believed to cause the radical heat and particle flux across the separatrix and into the scrape-off-layers of these devices. This paper describes initial measurements of 2-D space-time structure of the edge density turbulence made using a visible imaging diagnostic in the National Spherical Torus Experiment (NSTX). The structure of the edge turbulence is most clearly visible using a method of gas puff imaging to locally illuminate the edge density turbulence

  14. IMAGE ANALYSIS BASED ON EDGE DETECTION TECHNIQUES

    Institute of Scientific and Technical Information of China (English)

    纳瑟; 刘重庆

    2002-01-01

    A method that incorporates edge detection technique, Markov Random field (MRF), watershed segmentation and merging techniques was presented for performing image segmentation and edge detection tasks. It first applies edge detection technique to obtain a Difference In Strength (DIS) map. An initial segmented result is obtained based on K-means clustering technique and the minimum distance. Then the region process is modeled by MRF to obtain an image that contains different intensity regions. The gradient values are calculated and then the watershed technique is used. DIS calculation is used for each pixel to define all the edges (weak or strong) in the image. The DIS map is obtained. This help as priority knowledge to know the possibility of the region segmentation by the next step (MRF), which gives an image that has all the edges and regions information. In MRF model,gray level l, at pixel location i, in an image X, depends on the gray levels of neighboring pixels. The segmentation results are improved by using watershed algorithm. After all pixels of the segmented regions are processed, a map of primitive region with edges is generated. The edge map is obtained using a merge process based on averaged intensity mean values. A common edge detectors that work on (MRF) segmented image are used and the results are compared. The segmentation and edge detection result is one closed boundary per actual region in the image.

  15. Object detection using categorised 3D edges

    DEFF Research Database (Denmark)

    Kiforenko, Lilita; Buch, Anders Glent; Bodenhagen, Leon

    2015-01-01

    is made possible by the explicit use of edge categories in the feature descriptor. We quantitatively compare our approach with the state-of-the-art template based Linemod method, which also provides an effective way of dealing with texture-less objects, tests were performed on our own object dataset. Our...... categorisation algorithm for describing objects in terms of its different edge types. Relying on edge information allow our system to deal with objects with little or no texture or surface variation. We show that edge categorisation improves matching performance due to the higher level of discrimination, which...

  16. Visible imaging of edge turbulence in NSTX

    International Nuclear Information System (INIS)

    S. Zweben; R. Maqueda; K. Hill; D. Johnson; S. Kaye; H. Kugel; F. Levinton; R. Maingi; L. Roquemore; S. Sabbagh; G. Wurden

    2000-01-01

    Edge plasma turbulence in tokamaks and stellarators is believed to cause the radial heat and particle flux across the separatrix and into the scrape-off-layers of these devices. This paper describes initial measurements of 2-D space-time structure of the edge density turbulence made using a visible imaging diagnostic in the National Spherical Torus Experiment (NSTX). The structure of the edge turbulence is most clearly visible using a method of ''gas puff imaging'' to locally illuminate the edge density turbulence

  17. Edge passivation induced single-edge ferromagnetism of zigzag MoS_2 nanoribbons

    International Nuclear Information System (INIS)

    Wang, Rui; Sun, Hui; Ma, Ben; Hu, Jingguo; Pan, Jing

    2017-01-01

    We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS_2 nanoribbons (ZMoS_2NRs) with and without oxygen (O) passivation. The bare ZMoS_2NRs are magnetic metal with ferromagnetic edge states, edge passivation decreases their magnetism because of the decrease of edge unsaturated electrons. Obviously, the electronic structure and magnetic properties of ZMoS_2NRs greatly depend on edge states. When both edges are passivated by O atoms, ZMoS_2NRs are nonmagnetic metals. When either edge is passivated by O atoms, the systems exhibit single-edge ferromagnetism and magnetism concentrates on the non-passivated edge. Edge passivation can not only tune the magnetism of ZMoS_2NRs, but also enhance their stability by eliminating dangling bonds. These interesting findings on ZMoS_2NRs may open the possibility of their application in nanodevices and spintronics. - Highlights: • Edge passivation for tuning magnetism of zigzag MoS_2 nanoribbons (ZMoS_2NRs) is proposed. • Edge passivation can tune ZMoS_2NRs from nonmagnetic metal to ferromagnetic metal. • When either edge is passivated, the systems exhibit single-edge ferromagnetic states. • These findings may inspire great interest in the community of ZMoS_2NRs and motivate numerous experimental researches.

  18. Feasibility of compensating for EUV field edge effects through OPC

    Science.gov (United States)

    Maloney, Chris; Word, James; Fenger, Germain L.; Niroomand, Ardavan; Lorusso, Gian F.; Jonckheere, Rik; Hendrickx, Eric; Smith, Bruce W.

    2014-04-01

    As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optical system for operation. This requirement causes EUV specific effects such as shadowing. The absorber physically shadows the reflective multilayer (ML) on an EUV reticle resulting in pattern fidelity degradation. To reduce this degradation, a thinner absorber may help. Yet, as the absorber thickness decreases, reflectivity increases in the `dark' region around the image field, resulting in a loss of contrast. The region around the edge of the die on the mask of unpatterned absorber material deposited on top of ML, known as the image border, is also susceptible to undesirable reflections in an ideally dark region. For EUVL to be enabled for high-volume manufacturing (HVM), reticle masking (REMA) blades are used to shield light from the image border to allow for the printing of densely spaced die. When die are printed densely, the image border of each neighboring die will overlap with the edge of a given die resulting in an increase of dose that overexposes features at the edge of the field. This effect is convolved with a fingerprint from the edge of the REMA blades. This phenomenon will be referred to as a field edge effect. One such mitigation strategy that has been investigated to reduce the field edge effect is to fully remove the ML along the image border to ensure that no actinic-EUV radiation can be reflected onto neighboring die. This has proven to suppress the effect, but residual out-of-band radiation still provides additional dose to features near the image border, especially in the corners where three neighboring fields overlap. Measurements of dense contact holes (CHs) have been made along the image border with and without a ML-etched border at IMEC in collaboration with Micron using the ASML NXE:3100. The

  19. Ballistic edge states in Bismuth nanowires revealed by SQUID interferometry.

    Science.gov (United States)

    Murani, Anil; Kasumov, Alik; Sengupta, Shamashis; Kasumov, Yu A; Volkov, V T; Khodos, I I; Brisset, F; Delagrange, Raphaëlle; Chepelianskii, Alexei; Deblock, Richard; Bouchiat, Hélène; Guéron, Sophie

    2017-07-05

    The protection against backscattering provided by topology is a striking property. In two-dimensional insulators, a consequence of this topological protection is the ballistic nature of the one-dimensional helical edge states. One demonstration of ballisticity is the quantized Hall conductance. Here we provide another demonstration of ballistic transport, in the way the edge states carry a supercurrent. The system we have investigated is a micrometre-long monocrystalline bismuth nanowire with topological surfaces, that we connect to two superconducting electrodes. We have measured the relation between the Josephson current flowing through the nanowire and the superconducting phase difference at its ends, the current-phase relation. The sharp sawtooth-shaped phase-modulated current-phase relation we find demonstrates that transport occurs selectively along two ballistic edges of the nanowire. In addition, we show that a magnetic field induces 0-π transitions and ϕ 0 -junction behaviour, providing a way to manipulate the phase of the supercurrent-carrying edge states and generate spin supercurrents.

  20. Theoretical insights into the effect of terrace width and step edge coverage on CO adsorption and dissociation over stepped Ni surfaces.

    Science.gov (United States)

    Yang, Kuiwei; Zhang, Minhua; Yu, Yingzhe

    2017-07-21

    Vicinal surfaces of Ni are model catalysts of general interest and great importance in computational catalysis. Here we report a comprehensive study conducted with density functional theory on Ni[n(111) × (100)] (n = 2, 3 and 4) surfaces to explore the effect of terrace width and step edge coverage on CO adsorption and dissociation, a probe reaction relevant to many industrial processes. The coordination numbers (CN), the generalized coordination numbers and the d band partial density of states (d-PDOS) of Ni are identified as descriptors to faithfully reflect the difference of the step edge region for Ni[n(111) × (100)]. Based on analysis of the energy diagrams for CO activation and dissociation as well as the structural features of the Ni(311), Ni(211) and Ni(533) surfaces, Ni(211) (n = 3) is proposed as a model of adequate representativeness for Ni[n(111) × (100)] (n≥ 3) surface groups in investigating small molecule activation over such stepped structures. Further, a series of Ni(211) surfaces with the step edge coverage ranging from 1/4 to 1 monolayer (ML) were utilized to assess their effect on CO activation. The results show that CO adsorption is not sensitive to the step edge coverage, which could readily approach 1 ML under a CO-rich atmosphere. In contrast, CO dissociation manifests strong coverage dependence when the coverage exceeds 1/2 ML, indicating that significant adsorbate-adsorbate interactions emerge. These results are conducive to theoretical studies of metal-catalyzed surface processes where the defects play a vital role.