WorldWideScience

Sample records for compound semiconductor alloys

  1. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  2. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  3. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  4. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  5. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  6. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  7. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  8. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  9. Local order dependent impurity levels in alloy semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da; Ecole Normale Superieure, 75 - Paris

    1981-01-01

    We develop a one band/may sites model for an isoelectronic impurity in a semiconductor alloy. The cluster-Bethe-lattice approximation is used to study the dependence of the impurity energy level upon the short range order (SRO) of the alloy. The Kikuchi parametrization is used to describe the latter. We take into account diagonal disorder only, with possible off-diagonal relaxation around the impurity site. All the inequivalent clusters of the impurity site and its first nearest neighbours are considered, thus including the important short range alloy potential fluctuations. Results are presented for the local density of impurity states, for different degrees of SRO in the alloy. (Author) [pt

  10. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  11. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  12. Compact Models for Defect Diffusivity in Semiconductor Alloys.

    Energy Technology Data Exchange (ETDEWEB)

    Wright, Alan F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Department; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Department

    2017-09-01

    Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE

  13. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  14. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  15. Semiconductor properties and protective role of passive films of iron base alloys

    International Nuclear Information System (INIS)

    Fujimoto, Shinji; Tsuchiya, Hiroaki

    2007-01-01

    Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H 2 SO 4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, the passive film of the Fe-18Cr alloy in the sulphuric acid consists of p-type oxide and n-type hydroxide layers. The behaviour of passive film growth and corrosion was discussed in terms of the electronic structure in the passive film

  16. Band anticrossing effects in highly mismatched semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

    2002-01-01

    The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs1-xNx and GaP1-xNx with x ~< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also

  17. Ordering-induced changes in the optical spectra of semiconductor alloys

    International Nuclear Information System (INIS)

    Bernard, J.E.; Wei, S.; Wood, D.M.; Zunger, A.

    1988-01-01

    It is shown how the recently predicted and subsequently observed spontaneous long-range ordering of pseudobinary A/sub 0.5/B/sub 0.5/C isovalent semiconductor alloys into the (AC) 1 (BC) 1 superlattice structure (a CuAuI-type crystal) gives rise to characteristic changes in the optical and photoemission spectra. We predict new direct transitions and substantial splittings of transitions absent in the disordered alloy

  18. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

    International Nuclear Information System (INIS)

    Greene, J.E.

    1984-01-01

    The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

  19. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  20. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  1. Overcoming Limitations in Semiconductor Alloy Design

    Science.gov (United States)

    Christian, Theresa Marie

    Inorganic semiconductors provide an astonishingly versatile, robust, and efficient platform for optoelectronic energy conversion devices. However, conventional alloys and growth regimes face materials challenges that restrict the full potential of these devices. Novel alloy designs based on isoelectronic co-doping, metamorphic growth and controllable atomic ordering offer new pathways to practical and ultra-high-efficiency optoelectronic devices including solar cells and light-emitting diodes. Abnormal isoelectronic alloys of GaP1-xBix, GaP 1-x-yBixNy, and GaAs1-xBix with unprecedented bismuth incorporation fractions and crystalline quality are explored in this thesis research. Comparative studies of several GaP1-xBix and GaP1-x-yBixNy alloys demonstrate that the site-specific incorporation of bismuth during epitaxial growth is sensitive to growth temperature and has dramatic effects on carrier transfer processes in these alloys. Additionally, distinctive bismuth-related localized states are spectrally identified for the first time in samples of GaAs1-xBix grown by laser-assisted epitaxial growth. These results address fundamental questions about the nature of bismuth-bismuth inter-impurity interactions. Finally, a metamorphic growth strategy for a novel light-emitting diode (LED) design is also discussed. This work utilized direct-bandgap AlxIn1-xP active layers with atomic ordering-based electron confinement to improve emission in the yellow and green spectral regions, where incumbent technologies are least effective, and demonstrated the feasibility of non-lattice-matched LED active materials for visible light emission.

  2. Ion implantation in compound semiconductors for high-performance electronic devices

    International Nuclear Information System (INIS)

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-01-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

  3. Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

    International Nuclear Information System (INIS)

    Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.

    2016-01-01

    We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

  4. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  5. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  6. Alloy Design Data Generated for B2-Ordered Compounds

    Science.gov (United States)

    Noebe, Ronald D.; Bozzolo, Guillermo; Abel, Phillip B.

    2003-01-01

    Developing alloys based on ordered compounds is significantly more complicated than developing designs based on disordered materials. In ordered compounds, the major constituent elements reside on particular sublattices. Therefore, the addition of a ternary element to a binary-ordered compound is complicated by the manner in which the ternary addition is made (at the expense of which binary component). When ternary additions are substituted for the wrong constituent, the physical and mechanical properties usually degrade. In some cases the resulting degradation in properties can be quite severe. For example, adding alloying additions to NiAl in the wrong combination (i.e., alloying additions that prefer the Al sublattice but are added at the expense of Ni) will severely embrittle the alloy to the point that it can literally fall apart during processing on cooling from the molten state. Consequently, alloying additions that strongly prefer one sublattice over another should always be added at the expense of that component during alloy development. Elements that have a very weak preference for a sublattice can usually be safely added at the expense of either element and will accommodate any deviation from stoichiometry by filling in for the deficient component. Unfortunately, this type of information is not known beforehand for most ordered systems. Therefore, a computational survey study, using a recently developed quantum approximate method, was undertaken at the NASA Glenn Research Center to determine the preferred site occupancy of ternary alloying additions to 12 different B2-ordered compounds including NiAl, FeAl, CoAl, CoFe, CoHf, CoTi, FeTi, RuAl, RuSi, RuHf, RuTi, and RuZr. Some of these compounds are potential high temperature structural alloys; others are used in thin-film magnetic and other electronic applications. The results are summarized. The italicized elements represent the previous sum total alloying information known and verify the computational

  7. Bond charges and electronic charge transfer in ternary semiconductors

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    By means of a simple molecule-theoretic model of 'linear superposition of two-electron molecules' the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. (author)

  8. Phonon structures of GaN-based random semiconductor alloys

    Science.gov (United States)

    Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

    2017-12-01

    Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

  9. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  10. ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schumm, Marcel

    2009-07-01

    ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

  11. Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2016-04-15

    Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

  12. Superconductivity in the elements, alloys and simple compounds

    Energy Technology Data Exchange (ETDEWEB)

    Webb, G.W. [Department of Physics, University of California, San Diego, La Jolla, CA 92093-0319 (United States); Marsiglio, F. [Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2E1 (Canada); Hirsch, J.E., E-mail: jhirsch@ucsd.edu [Department of Physics, University of California, San Diego, La Jolla, CA 92093-0319 (United States)

    2015-07-15

    Highlights: • A review of superconductivity in elements, alloys and simple compounds is given. • These materials are believed to be described by BCS–Eliashberg theory. • The McMillan–Rowell inversion process is described. • Calculations of Tc’s from first principles are surveyed. • Other criteria beyond BCS to characterize these superconductors are discussed. - Abstract: We give a brief review of superconductivity at ambient pressure in elements, alloys, and simple three-dimensional compounds. Historically these were the first superconducting materials studied, and based on the experimental knowledge gained from them the BCS theory of superconductivity was developed in 1957. Extended to include the effect of phonon retardation, the theory is believed to describe the subset of superconducting materials known as ‘conventional superconductors’, where superconductivity is caused by the electron–phonon interaction. These include the elements, alloys and simple compounds discussed in this article and several other classes of materials discussed in other articles in this Special Issue.

  13. Superconductivity in the elements, alloys and simple compounds

    International Nuclear Information System (INIS)

    Webb, G.W.; Marsiglio, F.; Hirsch, J.E.

    2015-01-01

    Highlights: • A review of superconductivity in elements, alloys and simple compounds is given. • These materials are believed to be described by BCS–Eliashberg theory. • The McMillan–Rowell inversion process is described. • Calculations of Tc’s from first principles are surveyed. • Other criteria beyond BCS to characterize these superconductors are discussed. - Abstract: We give a brief review of superconductivity at ambient pressure in elements, alloys, and simple three-dimensional compounds. Historically these were the first superconducting materials studied, and based on the experimental knowledge gained from them the BCS theory of superconductivity was developed in 1957. Extended to include the effect of phonon retardation, the theory is believed to describe the subset of superconducting materials known as ‘conventional superconductors’, where superconductivity is caused by the electron–phonon interaction. These include the elements, alloys and simple compounds discussed in this article and several other classes of materials discussed in other articles in this Special Issue

  14. Rethinking the theoretical description of photoluminescence in compound semiconductors

    Science.gov (United States)

    Valkovskii, V.; Jandieri, K.; Gebhard, F.; Baranovskii, S. D.

    2018-02-01

    Semiconductor compounds, such as Ga(NAsP)/GaP or GaAsBi/GaAs, are in the focus of intensive research due to their unique features for optoelectronic devices. The optical spectra of compound semiconductors are strongly influenced by the random scattering potentials caused by compositional and structural disorder. The disorder potential is responsible for the red-shift (Stokes shift) of the photoluminescence (PL) peak and for the inhomogeneous broadening of the PL spectra. So far, the anomalous broadening of the PL spectra in Ga(NAsP)/GaP has been explained assuming two coexisting length scales of disorder. However, this interpretation appears in contradiction to the recently observed dependence of the PL linewidth on the excitation intensity. We suggest an alternative approach that describes the PL characteristics in the framework of a model with a single length scale of disorder. The price is the assumption of two types of localized states with different, temperature-dependent non-radiative recombination rates.

  15. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  16. Bond-Length Distortions in Strained Semiconductor Alloys

    International Nuclear Information System (INIS)

    Woicik, J.C.; Pellegrino, J.G.; Steiner, B.; Miyano, K.E.; Bompadre, S.G.; Sorensen, L.B.; Lee, T.; Khalid, S.

    1997-01-01

    Extended x-ray absorption fine structure measurements performed at In-K edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine the In-As bond length to be 2.581±0.004 Angstrom in a buried, 213 Angstrom thick Ga 0.78 In 0.22 As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.015±0.004 Angstrom relative to the In-As bond length in bulk Ga 1-x In x As of the same composition; it is consistent with a simple model which assumes a uniform bond-length distortion in the epilayer despite the inequivalent In-As and Ga-As bond lengths. copyright 1997 The American Physical Society

  17. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  18. Hydrogenations of alloys and intermetallic compounds of magnesium

    International Nuclear Information System (INIS)

    Gavra, Z.

    1981-08-01

    A kinetic and thermodynamic study of the hydrogenation of alloys and intermetallic compounds of magnesium is presented. It was established that the addition of elements of the IIIA group (Al, Ga, In) to magnesium catalyses its hydrogenation. This is explained by the mechanism of diffusion of magnesium cation vacancies. The hydride Mg 2 NiH 4 was characterized by thermal analysis, x-ray diffraction and NMR measurements. The possibility of forming pseudo-binary compounds of Mg 2 Ni by the substitution of nickel or magnesium was examined. The hydrogenation of the inter-metallic compounds of the Mg-Al system was investigated. It was found that the addition of indium and nickel affected the hydrogenation kinetics. A preliminary study of the hydrogenation of various binary and ternary alloys of magnesium was carried out. (Author)

  19. Contributions of electron microscopy to the understanding of reactions on compound semiconductor surfaces

    International Nuclear Information System (INIS)

    Sands, T.

    1986-01-01

    Reacted films on compound semiconductor substrates present challenging materials characterization problems which often require the application of transmission electron microscopy (TEM) techniques. In this paper, both the problem - solving potential of the TEM techniques and the limits imposed by preparation of thin film/compound semiconductor TEM specimens are discussed. Studies of the Ni/GaAs, CuCl/aq)/CdS and Pd/GaAs reactions exemplify the role of TEM in identifying and determining the spatial distribution of interface - stabilized polymorphs and new ternary phases (e.g. tetragonal Cu/sub 2/S, Ni/sub 3/GaAs and Pd/sub x/GaAs). These examples also serve to clarify the relationship between TEM and complementary analysis techniques such as Rutherford backscattering spectrometry, Auger electron spectroscopy and glancing-angle x-ray diffraction. In particular, it is argued that a combination of (1) high-spatial-resolution information obtained by TEM and (2) an indication of the ''average'' behavior provided by data from a complementary characterization technique provide the minimum quality and quantity of data necessary to understand most reactions on compound semiconductor substrates

  20. Modulation doping and delta doping of III-V compound semiconductors

    NARCIS (Netherlands)

    Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

    1991-01-01

    The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

  1. N-doping of organic semiconductors by bis-metallosandwich compounds

    Science.gov (United States)

    Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

    2016-01-05

    The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

  2. Synthesis, Processing, and Thermoelectric Properties of Germanium-Antimony-Tellurium Based Compounds and Alloys

    Science.gov (United States)

    Williams, Jared Brett

    Society has become increasingly more aware of the negative impacts which nonrenewable energy sources have on the environment, and therefore the search for new and more efficient means of energy production has become an important research endeavor. Thermoelectric modules possess the unique ability to convert wasted heat into useful electrical energy via solid state processes, which could vastly improve the efficiency of a number of applications. The materials which accomplish this are typically comprised of semiconductors which exhibit high electrical conductivity, Seebeck coefficient, and thermal resistivity. Together these properties give us a gauge for the overall efficiency of the thermal to electrical energy conversion. Phase change materials are a class of materials primarily used for optical data storage in CDs, DVDs, and Blu-Ray discs. Today's state of the art phase change materials are based on alloys of GeTe and Sb2Te3. These materials have also been found to exhibit high thermoelectric efficiencies. These high efficiencies stem from their complex crystal structure and degenerate semiconducting nature. The purpose of this work was to study and engineer the thermoelectric properties of various alloys and compounds which belong to this family of materials. Specifically studied were the compounds Ge4SbTe5 and Ge17Sb2Te20. In each case various synthesis and processing strategies were implemented to increase the thermoelectric performance and better understand the fundamental electrical and thermal properties. Finally various proposals for future work on these materials are presented, all of which are based on the findings described herein.

  3. IRIS Toxicological Review of Thallium and Compounds (External Review Draft)

    Science.gov (United States)

    Thallium compounds are used in the semiconductor industry, the manufacture of optic lenses and low-melting glass, low-temperature thermometers, alloys, electronic devices, mercury lamps, fireworks, and imitation germs, and clinically as an imaging agent in the diagnosis of certai...

  4. Self-consistent method for quantifying indium content from X-ray spectra of thick compound semiconductor specimens in a transmission electron microscope.

    Science.gov (United States)

    Walther, T; Wang, X

    2016-05-01

    Based on Monte Carlo simulations of X-ray generation by fast electrons we calculate curves of effective sensitivity factors for analytical transmission electron microscopy based energy-dispersive X-ray spectroscopy including absorption and fluorescence effects, as a function of Ga K/L ratio for different indium and gallium containing compound semiconductors. For the case of InGaN alloy thin films we show that experimental spectra can thus be quantified without the need to measure specimen thickness or density, yielding self-consistent values for quantification with Ga K and Ga L lines. The effect of uncertainties in the detector efficiency are also shown to be reduced. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

  5. Orbital frustration induced unusual ordering in semiconductor alloys

    Science.gov (United States)

    Liu, Kai; Yin, Wanjian; Chen, Shiyou; Gong, Xingao; Wei, Suhuai; Xiang, Hongjun

    It is well known that ternary zinc-blende semiconductors are always more stable in the chalcopyrite (CH) structure than the Cu-Au (CA) structure because CH structure has large Coulomb interaction and reduced strain energy. Surprisingly, an experimental study showed that ZnFeSe2 alloy takes the CA order as the ground state structure, which is consistent with our density function theory (DFT) calculations showing that the CA order has lower energy than the CH order for ZnFeSe2. We reveal that the orbital degree of freedom of high-spin Fe2+ ion (d6) in the tetrahedral crystal field plays a key role in stabilizing the CA order. First, the spin-minority d electron of the Fe2+ ion tends to occupy the dx2-y 2 -like orbital instead of the d3z2 -r2 -like orbital because of its large negative Coulomb energy. Second, for a nearest-neighboring Fe2+ pair, two spin-minority d electrons with occupied dx2-y 2 -like orbitals in the plane containing the Fe-Fe bond has lower electronic kinetic energy. Both conditions can be satisfied in the CA ordered ZnFeSe2 alloy, while there is an orbital frustration in the CH structure. Our results suggest that orbital degree of freedom provides a new way to manipulate the structure and properties of alloys. Work at Fudan was supported by NSFC (11374056), the Special Funds for Major State Basic Research (2012CB921400, 2015CB921700), Program for Professor of Special Appointment (Eastern Scholar), and Fok Ying Tung Education Foundation.

  6. Structural and electronic properties of Ga{sub 1-x}In{sub x} As{sub 1-y}N{sub y} quaternary semiconductor alloy on GaAs substrate

    Energy Technology Data Exchange (ETDEWEB)

    Aslan, Metin, E-mail: maslan@sakarya.edu.tr [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey); Yalc Latin-Small-Letter-Dotless-I n, Battal G.; Uestuendag, Mehmet [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey)

    2012-04-05

    Highlights: Black-Right-Pointing-Pointer In this study we used DFT in the frame of LDA approach to determine electronic and structural properties of GaInAsN alloy. Black-Right-Pointing-Pointer We calculated lattice parameter and band gap energy of binary (GaAs, InAs, and GaN), ternary (GaInAs, GaAsN) and quaternary (GaInAsN) semiconductor alloys. Black-Right-Pointing-Pointer We formulated lattice parameter of GaInAsN respect to In and N composition. Black-Right-Pointing-Pointer We investigated different In and N composition of GaInAsN/GaAs heterostructure for various device applications. - Abstract: We have presented structural and electronic properties of binary (GaAs, GaN and InAs), ternary (Ga{sub 1-x}In{sub x}As and GaAs{sub 1-y}N{sub y}) and quaternary (Ga{sub 1-x}In{sub x}As{sub 1-y}N{sub y}) semiconductor alloys by using a first-principles pseudopotential technique. The structural and electronic properties of Zinc-Blende phase of these materials have been calculated by using the local density approximation (LDA) of the density-functional theory (DFT). To obtain the lattice parameter and band gap energy of the (GaInAsN) quaternary semiconductor alloy we separately calculated the lattice constant and band gap energies of ternary semiconductor alloys, namely GaAsN and GaInAs. The calculated lattice constant, bulk modulus and the direct band gaps for studied semiconductors showed great parallelism with the previous available theoretical and experimental studies.

  7. Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.

    Science.gov (United States)

    Sutter, Eli; Sutter, Peter

    2008-02-01

    We use transmission electron microscopy observations to establish the parts of the phase diagram of nanometer sized Au-Ge alloy drops at the tips of Ge nanowires (NWs) that determine their temperature-dependent equilibrium composition and, hence, their exchange of semiconductor material with the NWs. We find that the phase diagram of the nanoscale drop deviates significantly from that of the bulk alloy, which explains discrepancies between actual growth results and predictions on the basis of the bulk-phase equilibria. Our findings provide the basis for tailoring vapor-liquid-solid growth to achieve complex one-dimensional materials geometries.

  8. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  9. Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

    Science.gov (United States)

    Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

    2015-05-26

    Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

  10. Design and exploration of semiconductors from first principles: A review of recent advances

    Science.gov (United States)

    Oba, Fumiyasu; Kumagai, Yu

    2018-06-01

    Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and Cu

  11. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  12. Ion channeling study of defects in multicomponent semiconductor compounds

    International Nuclear Information System (INIS)

    Turos, A.; Nowicki, L.; Stonert, A.

    2002-01-01

    Compound semiconductor crystals are of great technological importance as basic materials for production of modern opto- and microelectronic devices. Ion implantation is one of the principal techniques for heterostructures processing. This paper reports the results of the study of defect formation and transformation in binary and ternary semiconductor compounds subjected to ion implantation with ions of different mass and energy. The principal analytical technique was He-ion channeling. The following materials were studied: GaN and InGaN epitaxial layers. First the semi empirical method of channeling spectra analysis for ion implanted multicomponent single crystal was developed. This method was later complemented by the more sophisticated method based on the Monte Carlo simulation of channeling spectra. Next, the damage buildup in different crystals and epitaxial layers as a function of the implantation dose was studied for N, Mg, Te, and Kr ions. The influence of the substrate temperature on the defect transformations was studied for GaN epitaxial layers implanted with Mg ions. Special attention was devoted to the study of growth conditions of InGaN/GaN/sapphire heterostructures, which are important component of the future blue laser diodes. In-atom segregation and tetragonal distortion of the epitaxial layer were observed and characterized. Next problem studied was the incorporation of hydrogen atoms in GaAs and GaN. Elastic recoil detection (ERDA) and nuclear reaction analysis (NRA) were applied for the purpose. (author)

  13. Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

    1997-03-01

    New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

  14. Environmental embrittlement of intermetallic compounds in Fe-Al alloys

    Institute of Scientific and Technical Information of China (English)

    张建民; 张瑞林; S.H.YU; 余瑞璜

    1996-01-01

    First,it is proposed that hydrogen atoms occupy the interstitial sites in Fe3Al and FeAl.Then the environmental embrittlement of intermetallic compounds in Fe-Al alloys is studied in the light of calculated valence electron structures and bond energy of Fe3Al and FeAl containing hydrogen atoms.From the analyses it is found that the states of metal atoms will change,in which more lattice electrons will become covalent electrons to bond with hydrogen atoms when the atomic hydrogen diffuses into the intermetallic compounds in Fe-Al alloys,which will result in the decrease of local metallicity in Fe3Al and FeAl.Meanwhile,it is found that the crystal will easily cleave since solute hydrogen bonds with metal atoms and severely anisotropic bonds form.As a conclusion,these factors result in the environmental embrittlement of Fe3Al and FeAl.

  15. Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

    International Nuclear Information System (INIS)

    Ipser, H.; Richter, K.; Micke, K.

    1997-01-01

    In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

  16. Effect of compound field on horizontal continuous casting of Al-1wt.%Si alloy

    Directory of Open Access Journals (Sweden)

    Zhong-tao Zhang

    2015-03-01

    Full Text Available A travelling magnetic field, a power ultrasonic field, and a compound field were used separately during the horizontal continuous casting process of Al-1wt.%Si alloy. The samples obtained were characterized using an optical microscope, a scanning electron microscope, a tensile testing machine, and an electron probe microscopic analyzer to test the microstructures, properties, and element distribution of the samples. The results show that the application of a single field can enhance the mechanical properties and reduce the segregation of Si element in Al-1wt.%Si alloy to some extent. The application of a compound field can obtain the best refinement and homogeneity of the Si element in the alloy, leading to the highest increase of tensile strength and elongation among the three applied fields. The mechanism of the action of external fields on the refinement of microstructures and homogeneity of the Si element is discussed and the compound field is considered to be an effective method to achieve high quality Al alloys.

  17. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  18. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  19. Microstructural evolution of Ni40Zr60 alloy during early stage of mechanical alloying of intermetallic compounds NiZr2 and Ni11Zr9

    International Nuclear Information System (INIS)

    Lee Peeyew; Koch, C.C.

    1994-01-01

    The microstructural change of Ni 40 Zr 60 alloy during mechanical alloying of mixtures of the intermetallic compounds NiZr 2 and Ni 11 Zr 9 has been studied by transmission electron microscopy. A specific ''cauliflower'' phase was formed during early stage of mechanical alloying process. It is suggested that the solid state reaction between intermetallic compounds NiZr 2 and Ni 11 Zr 9 is not the only origin for the formation of the ''cauliflower'' phase. ((orig.))

  20. Special Heusler compounds for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Balke, B.

    2007-07-01

    This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co{sub 2}Mn{sub 1-x}Fe{sub x}Si with the Fe concentration ranging from x=0 to 1 are reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co{sub 2}Mn{sub 1-x}Fe{sub x}Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co{sub 2}FeAl{sub 1-x}Si{sub x} with varying Si concentration are reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x=0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors is reported. It is shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers

  1. New alloys for structural application. Kikai kozoyo shin kinzoku zairyo

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, T [Kogakuin Univ., Tokyo (Japan)

    1993-01-15

    As recent advance on the scientific technologies is amazing, the materials having new function or excellent performance have been developed. Speaking on some recent examples, they can be divided roughly to one group belonging to invention of materials themselves such as oxide superconductors and compounds semi-conductors, and the other belonging to the products as invention of epoc-making material manufacturing methods such as noncrystalline alloys and particle dispersion reinforced alloys (ODS). In this report, first, some new metallic materials introduced relatively recently and converting many technical innovations in wide range of machinery field, such as titanium alloys, refractory alloys having nickel group, aluminium-lithium alloys, HSLA steels composed of reduced weight of alloy elements and having higher strengths than those of carbon-steels and various properties, intermetallic materials such as Ni3Al and others are described, and next, mechanical alloying and its particle dispersion reinforced alloys, liquid phase rapid cooling process and its noncrystalline alloy-rapid cooling cohesion powder sintering alloys, and others are summarized under the paths from their birth to present status. 31 refs., 12 figs., 5 tabs.

  2. Synthesis of Complex-Alloyed Nickel Aluminides from Oxide Compounds by Aluminothermic Method

    Directory of Open Access Journals (Sweden)

    Victor Gostishchev

    2018-06-01

    Full Text Available This paper deals with the investigation of complex-alloyed nickel aluminides obtained from oxide compounds by aluminothermic reduction. The aim of the work was to study and develop the physicochemical basis for obtaining complex-alloyed nickel aluminides and their application for enhancing the properties of coatings made by electrospark deposition (ESD on steel castings, as well as their use as grain refiners for tin bronze. The peculiarities of microstructure formation of master alloys based on the Al–TM (transition metal system were studied using optical, electronic scanning microscopy and X-ray spectral microanalysis. There were regularities found in the formation of structural components of aluminum alloys (Ni–Al, Ni-Al-Cr, Ni-Al-Mo, Ni-Al-W, Ni-Al-Ti, Ni-Cr-Mo-W, Ni-Al-Cr-Mo-W-Ti, Ni-Al-Cr-V, Ni-Al-Cr-V-Mo and changes in their microhardness, depending on the composition of the charge, which consisted of oxide compounds, and on the amount of reducing agent (aluminum powder. It is shown that all the alloys obtained are formed on the basis of the β phase (solid solution of alloying elements in nickel aluminide and quasi-eutectic, consisting of the β′ phase and intermetallics of the alloying elements. The most effective alloys, in terms of increasing microhardness, were Al-Ni-Cr-Mo-W (7007 MPa and Al-Ni-Cr-V-Mo (7914 MPa. The perspective is shown for applying the synthesized intermetallic master alloys as anode materials for producing coatings by electrospark deposition on steel of C1030 grade. The obtained coatings increase the heat resistance of steel samples by 7.5 times, while the coating from NiAl-Cr-Mo-W alloy remains practically nonoxidized under the selected test conditions. The use of NiAl intermetallics as a modifying additive (0.15 wt. % in tin bronze allows increasing the microhardness of the α-solid solution by 1.9 times and the microhardness of the eutectic (α + β phase by 2.7 times.

  3. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  4. B2 intermetallic compounds of Zr. New class of the shape memory alloys

    International Nuclear Information System (INIS)

    Koval, Yu.N.; Delaey, L.; Jang, W.Y.

    1995-01-01

    It is known that the B2 equiatomic intermetallic compounds of Zr (ZrCo-based) undergo a martensitic transformation (MT) with wide temperature hysteresis. It was found that the MT is accompanied by the perfect shape memory effect (SME) for ZrCu and ZrRh. In this report we represent the results of structural analysis, electrical resistivity, calorimetric and SME measurements for ZrCu- and ZrCo-based compounds. Interrelation between structural, thermodynamical parameters of MT and SME in this alloys will be described. The shape memory aspects of this potential alloys for the application at high temperatures will be discussed. (orig.)

  5. Effects of iron on intermetallic compound formation in scandium modified Al–Si–Mg Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Patakham, Ussadawut [National Metal and Materials Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@mail.kmutt.ac.th [Production Engineering Department, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

    2014-12-15

    Highlights: • Iron reduces the modification effects of scandium in Al–Si–Mg alloys. • Morphologies of Sc-rich intermetallic phases vary with Fe and Sc contents and the cooling rates. • Sc neutralizes effects of Fe by changing Fe-rich intermetallic phases from platelets to more cubic. - Abstract: In general, iron has a strong tendency to dissolve in molten aluminum. Iron has very low solid solubility in aluminum–silicon casting alloys, so it will form intermetallic compounds that cause detrimental effects on mechanical properties. In this work, the effects of iron on intermetallic compound formations in scandium modified Al–Si–Mg alloys were studied. There were two levels of iron addition (0.2 and 0.4 wt.%) and two levels of scandium addition (0.2 and 0.4 wt.%). We found that the effects of scandium modification decreased with increasing iron addition. The morphologies of the complex intermetallic compounds were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques. It was found that scandium changes the morphology of Fe-rich intermetallic compounds from β-phase (plate-like) to α-phase, which reduces the harmful effects of β-phase.

  6. Distribution of volatile organic compounds over a semiconductor Industrial Park in Taiwan.

    Science.gov (United States)

    Chiu, Kong-Hwa; Wu, Ben-Zen; Chang, Chih-Chung; Sree, Usha; Lo, Jiunn-Guang

    2005-02-15

    This study examined volatile organic compounds (VOC) concentration in ambient air collected during the years 2000--2003 at several different locations of Hsinchu Science-based Industrial Park (HSIP) in Taiwan. A canister automated GC-MS system analyzed the volatile organics in ambient air grasp samples according to T0-15 method. Oxygenated volatiles were the most abundant VOC detected in HSIP followed by aromatics that are commonly used as solvents in the semiconductor industries. The major components measured in the ambient air are 2-propanol (29-135 ppbv), acetone (12-164 ppbv), benzene (0.7-1.7 ppbv), and toluene (13-20 ppbv). At some of the sampling locations, odorous compounds such as carbon disulfide and dimethyl sulfide levels exceed threshold values. The estimated toluene/benzene ratio is very high at most of the sites. However, the total amount of VOC is reduced over the years from 2000 to 2003 due to strict implementation on use and discharge of solvents in industries. There exists no definite seasonal pattern for sporadic occurrence of high levels of some of the volatile organics. Stagnant weather conditions with low wind speeds aid accumulation of toxic species at ground level. The results entail that hi-tech semiconductor industries are still a potential source for harmful organic substances to surrounding microenvironment.

  7. CuAu–ZnO–graphene nanocomposite: A novel graphene-based bimetallic alloy-semiconductor catalyst with its enhanced photocatalytic degradation performance

    International Nuclear Information System (INIS)

    Xie, Hong; Ye, Xiaoliang; Duan, Kaiyue; Xue, Muyin; Du, Yongling; Ye, Weichun; Wang, Chunming

    2015-01-01

    Graphical abstract: In this work, we have successfully synthesized a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite, and which behaved an enhanced photocatalytic activity. - Highlights: • A bimetallic alloy-based catalyst: CuAu–ZnO–Gr is synthesized. • CuAu–ZnO–Gr behaves an enhanced photocatalytic activity. • The detailed explanation of photocatalytic mechanism of CuAu–ZnO–Gr. - Abstract: The bimetallic alloy CuAu nanoparticles (NPs) can produce more photogenerated electrons when compared with single metal Au NPs. Moreover, graphene (Gr) sheets can help the charge separation and slow down the recombination of the electron hole pairs of ZnO. Hence, a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite is synthesized. Due to the synergistic effect among CuAu NPs, ZnO nanopyramids, and Gr sheets, CuAu–ZnO–Gr behaves an enhanced photocatalytic activity for the photocatalytic degradation of synthetic colorants methyl orange (MO), methylene blue (MB), indigotin (IN), sunset yellow (SY), and tartrazine (TT) under the simulated sunlight irradiation. Furthermore, the apparent rate constants (k app ) of MO, MB, IN, SY, and TT degradation are estimated respectively. In addition, the as-prepared CuAu–ZnO–Gr nanocomposite is characterized by X-ray diffraction, UV–vis spectrum, transmission electron microscopy, energy dispersive X-ray analysis (EDX), and EDX mapping. As a result of the facile synthesis route and the enhanced photocatalytic activity, this new material CuAu–ZnO–Gr can be a promising photocatalyst for the degradation of dyes

  8. CuAu–ZnO–graphene nanocomposite: A novel graphene-based bimetallic alloy-semiconductor catalyst with its enhanced photocatalytic degradation performance

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Hong [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); Ye, Xiaoliang [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 (China); Duan, Kaiyue; Xue, Muyin; Du, Yongling; Ye, Weichun [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); Wang, Chunming, E-mail: wangcm@lzu.edu.cn [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China)

    2015-07-05

    Graphical abstract: In this work, we have successfully synthesized a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite, and which behaved an enhanced photocatalytic activity. - Highlights: • A bimetallic alloy-based catalyst: CuAu–ZnO–Gr is synthesized. • CuAu–ZnO–Gr behaves an enhanced photocatalytic activity. • The detailed explanation of photocatalytic mechanism of CuAu–ZnO–Gr. - Abstract: The bimetallic alloy CuAu nanoparticles (NPs) can produce more photogenerated electrons when compared with single metal Au NPs. Moreover, graphene (Gr) sheets can help the charge separation and slow down the recombination of the electron hole pairs of ZnO. Hence, a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite is synthesized. Due to the synergistic effect among CuAu NPs, ZnO nanopyramids, and Gr sheets, CuAu–ZnO–Gr behaves an enhanced photocatalytic activity for the photocatalytic degradation of synthetic colorants methyl orange (MO), methylene blue (MB), indigotin (IN), sunset yellow (SY), and tartrazine (TT) under the simulated sunlight irradiation. Furthermore, the apparent rate constants (k{sub app}) of MO, MB, IN, SY, and TT degradation are estimated respectively. In addition, the as-prepared CuAu–ZnO–Gr nanocomposite is characterized by X-ray diffraction, UV–vis spectrum, transmission electron microscopy, energy dispersive X-ray analysis (EDX), and EDX mapping. As a result of the facile synthesis route and the enhanced photocatalytic activity, this new material CuAu–ZnO–Gr can be a promising photocatalyst for the degradation of dyes.

  9. Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.

    Science.gov (United States)

    Inatomi, Y; Sakata, K; Arivanandhan, M; Rajesh, G; Nirmal Kumar, V; Koyama, T; Momose, Y; Ozawa, T; Okano, Y; Hayakawa, Y

    2015-01-01

    In x Ga 1- x Sb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed. To investigate the dissolution and growth process of In x Ga 1- x Sb alloy semiconductors via a sandwiched structure of GaSb(seed)/InSb/GaSb(feed) under normal and μG conditions. In x Ga 1- x Sb crystals were grown at the International Space Station (ISS) under μG conditions, and a similar experiment was conducted under terrestrial conditions (1G) using the vertical gradient freezing (VGF) method. The grown crystals were cut along the growth direction and its growth properties were studied. The indium composition and growth rate of grown crystals were calculated. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave with the initial seed interface being nearly flat and having facets at the peripheries. The quality of the μG crystals was better than that of the 1G samples, as the etch pit density was low in the μG sample. The growth rate was higher under μG compared with 1G. Moreover, the growth started at the peripheries under 1G, whereas it started throughout the seed interface under μG. Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga 1- x Sb alloy semiconductor.

  10. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  11. Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

    Directory of Open Access Journals (Sweden)

    Marcelino Becerril

    2013-04-01

    Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

  12. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

    Science.gov (United States)

    Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

    2016-01-01

    Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

  13. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  14. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  15. Four-branched compounds coupled Si and iron-rich intermetallics in near eutectic Al-Si alloys

    International Nuclear Information System (INIS)

    Wu, Yuying; Liu, Xiangfa; Jiang, Binggang; Bian, Xiufang

    2007-01-01

    Many four-branched compounds coupled Si and iron-rich intermetallics were observed in near eutectic Al-Si alloy modified with Al-P master alloy. Such four-branched compounds have never been reported before, but in our case it seems to be commonly observed. In this work the growth characterization of the four-branched compounds are scrutinized with a JXA-8800 electron microprobe (EPMA). More deep study of the formation of four-branched compounds is performed by SEM and TEM analysis. The characterization of the four-branched compounds is that of a primary silicon in the center with four iron-rich intermetallics around. Experimental results also show that the precipitation of primary silicon is the key factor for the formation of four-branched compounds. And WHS-theory explains the growth mechanism of the four-branched compounds. In detail, subsequent twinning within the primary silicon provides four-fold coordination sites on the surface, and then the α-Al(Fe,Mn)-Si phase nucleates on the surface of the primary silicon

  16. On the impact of isoelectric impurities on band bowing and disorder of compound semiconductors; Ueber den Einfluss von isoelektronischen Stoerstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Karcher, Christian

    2012-03-16

    Isolectronic impurities and their impact on the properties of compound semiconductors is discussed in two systems: Nitrogen in Ga(As,P) quantum wells on the one hand and Sulfur and Selenium in bulk ZnTe. The properties are reduced to two experimentally observable aspects: Band Bowing, i.e. the non-linearity of the band gap of the compound semiconductor and disorder, i.e. in particular the formation of a strongly localized density of states beneath the fundamental band gap. Apart of the pure experimental studies an insight into the theoretical model of disorder-induced temperature dependent luminescence properties of the compound semiconductors by means of Monte Carlo Simulations is given.

  17. Instability of TiC and TiAl3 compounds in Al-10Mg and Al-5Cu alloys by addition of Al-Ti-C master alloy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The performance of Al-Ti-C master alloy in refining Al-10Mg and A1-5Cu alloys was studied by using electron probe micro-analyzer (EPMA) and X-ray diffractometer (XRD) analysis.The results indicate that there are obvious fading phenomena in both Al-10Mg and Al-5Cu alloys with the addition of Al-5Ti-0.4C refiner which contains TiC and TiAl3 compounds.Mg element has no influence on the stability of TiC and TiAl3, while TiC particles in Al-10Mg alloy react with Al to form Al4C3 particles, resulting in the refinement fading.However, TiC particles are relatively stable in Al-5Cu alloy, while TiAl3 phase reacts with Al2Cu to produce a new phase Ti(Al, Cu)2, which is responsible for the refinement fading in Al-5Cu alloy.These indicate that the refinement fading will not occur only when both the TiC particles and TiAl3 compound of Al-Ti-C refiner are stable in Al alloys.

  18. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  19. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  20. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  1. Tensile Strength of the Al-9%Si Alloy Modified with Na, F and Cl Compounds

    Directory of Open Access Journals (Sweden)

    T. Lipiński

    2010-01-01

    Full Text Available The modification of the Al-9%Si alloy with the use of a complex modifier containing Na, F and Cl was investigated in the study. The modifier was composed of NaCl, Na3AlF6 and NaF compounds. The modifier and the liquid Al-Si alloy were kept in the crucible for 15 minutes. The modifier's effect relative to the weight of the processed alloy on its tensile strength was presented in graphic form. The results of the study indicate that the complex modifier altered the investigated properties of the eutectic Al-9%Si alloy.

  2. Digital Alloy Absorber for Photodetectors

    Science.gov (United States)

    Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

    2016-01-01

    In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

  3. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Barlow, Anders J., E-mail: anders.barlow@ncl.ac.uk; Portoles, Jose F.; Cumpson, Peter J. [National EPSRC XPS Users' Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  4. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  5. Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

    2008-04-02

    The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M{sub 3}P{sub 2} (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be{sub 3}P{sub 2}, Mg{sub 3}P{sub 2} and Ca{sub 3}P{sub 2}, respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail.

  6. Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

    International Nuclear Information System (INIS)

    Mokhtari, Ali

    2008-01-01

    The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M 3 P 2 (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be 3 P 2 , Mg 3 P 2 and Ca 3 P 2 , respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail

  7. Secondary electron emission from metals and semi-conductor compounds

    International Nuclear Information System (INIS)

    Ono, Susumu; Kanaya, Koichi

    1979-01-01

    Attempt was made to present the sufficient solution of the secondary electron yield of metals and semiconductor compounds except insulators, applying the free electron scattering theory to the absorption of secondary electrons generated within a solid target. The paper is divided into the sections describing absorption coefficient and escape depth, quantitative characteristics of secondary yield, angular distribution of secondary electron emission, effect of incident angle to secondary yield, secondary electron yield transmitted, and lateral distribution of secondary electron emission, besides introduction and conclusion. The conclusions are as follows. Based on the exponential power law for screened atomic potential, secondary electron emission due to both primary and backscattered electrons penetrating into metallic elements and semi-conductive compounds is expressed in terms of the ionization loss in the first collision for escaping secondary electrons. The maximum yield and the corresponding primary energy can both consistently be derived as the functions of three parameters: atomic number, first ionization energy and backscattering coefficient. The yield-energy curve as a function of the incident energy and the backscattering coefficient is in good agreement with the experimental results. The energy dependence of the yield in thin films and the lateral distribution of secondary yield are derived as the functions of the backscattering coefficient and the primary energy. (Wakatsuki, Y.)

  8. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  9. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  10. Producing p-type conductivity in self-compensating semiconductor material

    International Nuclear Information System (INIS)

    Vechten, J.A. van; Woodall, J.M.

    1981-01-01

    This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

  11. Effect of irradiation on the critical currents of alloy and compound superconductors

    International Nuclear Information System (INIS)

    Sekula, S.T.

    1977-06-01

    The effects of energetic-particle irradiation on the critical-current density J/sub c/(H) of several superconducting compounds and Nb-Ti alloys have been examined by a number of workers. The irradiations used in the investigations include electrons, fast neutrons, ions, and fission fragments. The results of these studies are reviewed and summarized. In the alloys, changes in J/sub c/(H) on irradiation depend on the metallurgical history of the material and indicate that radiation defects modify the strength of the interaction between the fluxoid array and the sample microstructure. Radiation defects in alloys can also affect J/sub c/(H) through small decreases in T/sub c/, the transition temperature and rho, the normal-state resistivity. Irradiations of A15 compounds up to moderate fluences (dependent on the type and energy of irradiating particle) lead to decreases in T/sub c/ of approximately 1 0 K and increases in J/sub c/(H) with dose for most of the samples investigated. This result can be qualitatively understood as resulting from radiation-induced changes in rho and the pinning force acting on the fluxoids. At higher dose levels, significant depressions of T/sub c/ and possibly gamma, the electronic specific heat coefficient, lead to drastic reductions in J/sub c/(H). The effect of various energetic particles and irradiation temperature on changes in J/sub c/(H) are discussed

  12. Recovery of Li from alloys of Al- Li and Li- Al using engineered scavenger compounds

    Science.gov (United States)

    Riley, W. D.; Jong, B. W.; Collins, W. K.; Gerdemann, S. J.

    1994-01-01

    A method of producing lithium of high purity from lithium aluminum alloys using an engineered scavenger compound, comprising: I) preparing an engineered scavenger compound by: a) mixing and heating compounds of TiO2 and Li2CO3 at a temperature sufficient to dry the compounds and convert Li.sub.2 CO.sub.3 to Li.sub.2 O; and b) mixing and heating the compounds at a temperature sufficient to produce a scavenger Li.sub.2 O.3TiO.sub.2 compound; II) loading the scavenger into one of two electrode baskets in a three electrode cell reactor and placing an Al-Li alloy in a second electrode basket of the three electrode cell reactor; III) heating the cell to a temperature sufficient to enable a mixture of KCl-LiCl contained in a crucible in the cell to reach its melting point and become a molten bath; IV) immersing the baskets in the bath until an electrical connection is made between the baskets to charge the scavenger compound with Li until there is an initial current and voltage followed by a fall off ending current and voltage; and V) making a connection between the basket electrode containing engineered scavenger compound and a steel rod electrode disposed between the basket electrodes and applying a current to cause Li to leave the scavenger compound and become electrodeposited on the steel rod electrode.

  13. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  14. Advances in semiconductor photodetectors for scintillators

    International Nuclear Information System (INIS)

    Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

    1997-01-01

    Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

  15. Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

    Science.gov (United States)

    Narang, Prineha

    This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

  16. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  17. Design and fabrication of a mechanical alloying system for preparing intermetallic, nanocrystalline, amorphous and quasicrystalline compounds

    International Nuclear Information System (INIS)

    Bonifacio M, J.; Iturbe G, J.L.; Castaneda J, G.

    2002-01-01

    In this work a grinding system was designed and fabricated which allowed to improve the operation conditions in time, frequency, temperature and selection of the grinding media and that allow the contamination decrease of the compounds. By means of this method of mechanical alloying new metallic compounds can be produced, starting from elemental powders, with fine and controlled microstructures. These compounds prepared by this method are going to be used as materials for the hydrogen storage. (Author)

  18. Reactivity of group IV (100) semiconductor surfaces towards organic compounds

    Science.gov (United States)

    Wang, George T.

    The reactions of simple and multifunctional organic compounds with the clean silicon, germanium, and diamond (100)-2 x 1 semiconductor surfaces have been investigated using a combination of multiple internal reflection infrared spectroscopy and quantum chemistry density functional theory calculations. From these studies, an improved understanding of the atomic level reactivity of these semiconductor surfaces has been obtained, along with insights into how to achieve their selective coupling with organics of desired and varied functionality. In addition to the Si(100) and Ge(100) surfaces, our results show that cycloaddition chemistry can also be extended to the diamond (100) surface. At room temperature, 1,3-butadiene was found to form a Diels-Alder product with the diamond (100) surface, as evidenced by isotopic substitution experiments and comparison of the surface adduct with its direct molecular analogue, cyclohexene. The reactions of other classes of molecules in addition to alkenes on the Si(100) and Ge(100) surfaces, including a series of five-membered cyclic amines, were also examined. For tertiary aliphatic amines on Si(100) and both secondary and tertiary aliphatic amines on Ge(100), a majority of the molecules were observed to become stably trapped in dative-bonded precursor states rather than form energetically favorable dissociation products. For pyrrole, aromaticity was found to play a defining role in its reactivity, and a comparison of its molecular and surface reactivity reveals interesting similarities. To probe the factors controlling the selectivity of organic reactions on clean semiconductor surfaces, the adsorption of acetone and a series of unsaturated ketones was also investigated. The reaction of acetone on Ge(100) was found to be under thermodynamic control at room temperature, resulting in the formation of an "ene" product rather than the kinetically favored [2+2] C=O cycloaddition product previously observed on the Si(100) surface. In

  19. Ion spectra of the metal vapor vacuum arc ion source with compound and alloy cathodes

    Science.gov (United States)

    Sasaki, Jun; Brown, Ian G.

    1990-01-01

    In metal vapor vacuum arc (MEVVA) ion sources, vacuum arc plasma with cathodes of single, pure elements has been utilized for the production of metal ions. In this study, we have investigated the charge state distributions of ions produced in vacuum arc plasmas in a MEVVA ion source for the case when the cathode is an alloy or a compound material. The ion charge state spectra were analyzed by means of a time-of-flight apparatus. We have compared the ion spectra for a cathode of an alloy or a compound material with its constituent elements: TiC/TiN/TiO2/Ti/C, SiC/Si/C, WC/W/C U/UN/(UN-ZrC)/Zr/C, and brass/Zn/Cu. We find that the MEVVA produces ions of all constituent elements in the compound and the alloy cathodes. The charge state distribution of each element differs, however, from the charge state distribution obtained in the vacuum arc with a cathode made of the pure, single constituent element. Fractional values of the total ion numbers of each constituent element in the extracted beam depart from the stoichiometry of the elements in the cathode material. In an operation with a TiC cathode, we irradiated a 304 stainless-steel plate with the extracted beam. Results from glow-discharge spectroscopy (GDS) of the surface show that both titanium and carbon are implanted in the substrate after the irradiation.

  20. IRIS Toxicological Review of Thallium and Compounds ...

    Science.gov (United States)

    Thallium compounds are used in the semiconductor industry, the manufacture of optic lenses and low-melting glass, low-temperature thermometers, alloys, electronic devices, mercury lamps, fireworks, and imitation germs, and clinically as an imaging agent in the diagnosis of certain tumors. EPA's assessment of noncancer health effects and carcinogenic potential of thallium compounds was last prepared and added to the IRIS database between 1988 and 1990. The IRIS program is preparing an assessment that will incorporate current health effects information available for thallium and compounds, and current risk assessment methods. The IRIS assessment for thallium compounds will consist of a Toxicological Review and IRIS Summary. The Toxicological Review is a critical review of the physiochemical and toxicokinetic properties of a chemical, and its toxicity in humans and experimental systems. The assessment will present reference values for the noncancer effects of thallium compounds (RfD and Rfc), and a cancer assessment. The Toxicological Review and IRIS Summary have been subject to Agency review, Interagency review, and external scientific peer review. The final product will reflect the Agency opinion on the overall toxicity of thallium and compounds. EPA is undertaking an Integrated Risk Information System (IRIS) health assessment for thallium and compounds. IRIS is an EPA database containing Agency scientific positions on potential adverse human health effec

  1. Band gap characterization of ternary BBi1−xNx (0≤x≤1) alloys using modified Becke–Johnson (mBJ) potential

    International Nuclear Information System (INIS)

    Yalcin, Battal G.

    2015-01-01

    The semi-local Becke–Johnson (BJ) exchange-correlation potential and its modified form proposed by Tran and Blaha have attracted a lot of interest recently because of the surprisingly accurate band gaps they can deliver for many semiconductors and insulators (e.g., sp semiconductors, noble-gas solids, and transition-metal oxides). The structural and electronic properties of ternary alloys BBi 1−x N x (0≤x≤1) in zinc-blende phase have been reported in this study. The results of the studied binary compounds (BN and BBi) and ternary alloys BBi 1−x N x structures are presented by means of density functional theory. The exchange and correlation effects are taken into account by using the generalized gradient approximation (GGA) functional of Wu and Cohen (WC) which is an improved form of the most popular Perdew–Burke–Ernzerhof (PBE). For electronic properties the modified Becke–Johnson (mBJ) potential, which is more accurate than standard semi-local LDA and PBE calculations, has been chosen. Geometric optimization has been implemented before the volume optimization calculations for all the studied alloys structure. The obtained equilibrium lattice constants of the studied binary compounds are in coincidence with experimental works. And, the variation of the lattice parameter of ternary alloys BBi 1−x N x almost perfectly matches with Vegard's law. The spin–orbit interaction (SOI) has been also considered for structural and electronic calculations and the results are compared to those of non-SOI calculations

  2. Hydrogen-related effects in crystalline semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1988-08-01

    Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H + in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H 2 . Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs

  3. Hot Carrier Generation and Extraction of Plasmonic Alloy Nanoparticles.

    Science.gov (United States)

    Valenti, Marco; Venugopal, Anirudh; Tordera, Daniel; Jonsson, Magnus P; Biskos, George; Schmidt-Ott, Andreas; Smith, Wilson A

    2017-05-17

    The conversion of light to electrical and chemical energy has the potential to provide meaningful advances to many aspects of daily life, including the production of energy, water purification, and optical sensing. Recently, plasmonic nanoparticles (PNPs) have been increasingly used in artificial photosynthesis (e.g., water splitting) devices in order to extend the visible light utilization of semiconductors to light energies below their band gap. These nanoparticles absorb light and produce hot electrons and holes that can drive artificial photosynthesis reactions. For n-type semiconductor photoanodes decorated with PNPs, hot charge carriers are separated by a process called hot electron injection (HEI), where hot electrons with sufficient energy are transferred to the conduction band of the semiconductor. An important parameter that affects the HEI efficiency is the nanoparticle composition, since the hot electron energy is sensitive to the electronic band structure of the metal. Alloy PNPs are of particular importance for semiconductor/PNPs composites, because by changing the alloy composition their absorption spectra can be tuned to accurately extend the light absorption of the semiconductor. This work experimentally compares the HEI efficiency from Ag, Au, and Ag/Au alloy nanoparticles to TiO 2 photoanodes for the photoproduction of hydrogen. Alloy PNPs not only exhibit tunable absorption but can also improve the stability and electronic and catalytic properties of the pure metal PNPs. In this work, we find that the Ag/Au alloy PNPs extend the stability of Ag in water to larger applied potentials while, at the same time, increasing the interband threshold energy of Au. This increasing of the interband energy of Au suppresses the visible-light-induced interband excitations, favoring intraband excitations that result in higher hot electron energies and HEI efficiencies.

  4. Microstructure of AZ31 Magnesium Alloy deformed by indentation-flattening compound deformation technology

    Science.gov (United States)

    Wang, Minghao; Wang, Zhongtang; Yu, Xiaolin

    2018-03-01

    Characteristic of indentation-flattening compound deformation technology (IFCDT) is discussed, and the parameters of IFCDT are defined. Performance of magnesium alloy AZ31 sheet deformed by IFCDT is researched. The effect of IFCDT coefficient, temperature and reduction ratio on the microstructure of magnesium alloy sheet is analyzed. The research results show that the volume fraction of the twin crystal decreases gradually and the average grain size increases with increasing of coefficient of IFCDT. With increase of the reduction ratio, the volume fraction of the twin crystal gradually increases, and the average grain size also increases. With increase of deformation temperature, the volume fraction of the twin crystal decreases gradually, and the twin crystal grain size increases.

  5. A new standardless quantitative electron probe microanalysis technique applied to III-V compound semiconductors

    International Nuclear Information System (INIS)

    Zangalis, K.P.; Christou, A.

    1982-01-01

    The present paper introduces a new standardless quantitative scheme for off-line electron microprobe analysis applications. The analysis is based on standard equations of the type Isub(i)=Csub(i)fsub(ZAF)βsub(i) and is specifically suitable for compound semiconductors. The roots to the resultant nth-degree polynomial are the unknown concentrations. Methods for computing Csub(i) when coefficients βsub(i) are unknown are also outlined. Applications of standardless analysis to GaAs and InP specimens are compared with results obtained by Auger electron spectroscopy and quantitative electron probe analysis with standards. (Auth.)

  6. Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches

    Directory of Open Access Journals (Sweden)

    M. P. Polak

    2016-01-01

    Full Text Available Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD method and the density functional perturbation theory (DFPT are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp. and the alchemical mixing (AM method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the elastic tensors, elastic moduli, Poisson’s ratio, B/G, and relaxation coefficient, as well as lattice parameters are calculated using all said methods. Conclusions about the use of the approaches investigated in this paper and about their performance are drawn. In addition, in both crystal structures, the band gap is studied in the whole composition range using the MBJLDA functional. The band gap bowings are unusually high, which confirms earlier reports.

  7. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

    Science.gov (United States)

    Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

    2017-10-01

    The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

  8. Vacuum brazing of TiAl48Cr2Nb2 casting alloys based on TiAl (γ intermetallic compound

    Directory of Open Access Journals (Sweden)

    Z. Mirski

    2010-01-01

    Full Text Available A growing interest in modern engineering materials characterised by increasingly better operational parameters combined with a necessity to obtain joints of such materials representing good operation properties create important research and technological problems of today. These issues include also titanium joints or joints of titanium alloys based on intermetallic compounds. Brazing is one of the basic and sometimes even the only available welding method used for joining the aforesaid materials in production of various systems, heat exchangers and, in case of titanium alloys based on intermetallic compounds, turbine elements and space shuttle plating etc. This article presents the basic physical and chemical properties as well as the brazability of alloys based on intermetallic compounds. The work also describes the principle and mechanisms of diffusion-brazed joint formation as well as reveals the results of metallographic and strength tests involving diffusion-welded joints of TiAl48Cr3Nb2 casting alloy based on TiAl (γ phase with the use of sandwich-type layers of silver-based parent metal (grade B- Ag72Cu-780 (AG 401 and copper (grade CF032A. Structural examination was performed by means of light microscopy, scanning electron microscope (SEM and energy dispersion spectrometer (EDS. Furthermore, the article reveals the results of shear strength tests involving the aforementioned joints.

  9. Effect of Co on Si and Fe-containing intermetallic compounds (IMCs) in Al–20Si–5Fe alloys

    International Nuclear Information System (INIS)

    Fatih Kilicaslan, M.; Yilmaz, Fikret; Hong, Soon-Jik; Uzun, Orhan

    2012-01-01

    The effects of cobalt addition on microstructure and mechanical properties of Al–20Si–5Fe–XCo (X=0, 1, 3, and 5) alloys were reported in this study. The alloys were produced by both conventional sand casting and melt-spinning at 20 m/s disk velocity. Microstructures of the samples were investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Vickers micro-hardness tester was used for hardness measurements. Results showed that Co addition can alter morphology of Fe-bearing intermetallic compounds (IMCs) from long rod/needle-like structures to short rod-like ones, and lead to a more homogenous distribution in the microstructure. Addition of 5 wt% Co leads to a decrease in average size of the primary silicon phases in as-cast Al–Si alloys. In melt-spun alloys, with the addition of Co, the microstructure became finer and more homogenously distributed, while thickness of the featureless zone has seen great increase. The optimum Fe to Co ratio was found to be 1 for suppressing the undesirable effect of Fe-bearing acicular/needle-like intermetallic compounds.

  10. Effect of Co on Si and Fe-containing intermetallic compounds (IMCs) in Al-20Si-5Fe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Yilmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering, Institute for Rare Metals, Kongju National University, Cheonan 331717 (Korea, Republic of); Uzun, Orhan, E-mail: orhan.uzun@gop.edu.tr [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey)

    2012-10-30

    The effects of cobalt addition on microstructure and mechanical properties of Al-20Si-5Fe-XCo (X=0, 1, 3, and 5) alloys were reported in this study. The alloys were produced by both conventional sand casting and melt-spinning at 20 m/s disk velocity. Microstructures of the samples were investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Vickers micro-hardness tester was used for hardness measurements. Results showed that Co addition can alter morphology of Fe-bearing intermetallic compounds (IMCs) from long rod/needle-like structures to short rod-like ones, and lead to a more homogenous distribution in the microstructure. Addition of 5 wt% Co leads to a decrease in average size of the primary silicon phases in as-cast Al-Si alloys. In melt-spun alloys, with the addition of Co, the microstructure became finer and more homogenously distributed, while thickness of the featureless zone has seen great increase. The optimum Fe to Co ratio was found to be 1 for suppressing the undesirable effect of Fe-bearing acicular/needle-like intermetallic compounds.

  11. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  12. Microstructures and thermoelectric properties of GeSbTe based layered compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

    2007-08-15

    Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

  13. Structural study of the semimagnetic semiconductor Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela); Sagredo, V. [Laboratorio de Magnetismo en Solidos, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida (Venezuela)

    2009-02-15

    The semimagnetic semiconductor alloy Zn{sub 0.5}Mn{sub 0.5}In{sub 2}Te{sub 4} was refined from an X-ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I anti 42m (N {sup circle} 121), Z=2, with unit cell parameters a=6.1738(1)A, c=12.3572(4)A, V=471.00(2)A3, c/a=2.00. This material crystallizes in a stannite-type structure. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  15. Band structure engineering of semiconductors for enhanced photoelectrochemical water splitting: The case of TiO2

    Science.gov (United States)

    Yin, Wan-Jian; Tang, Houwen; Wei, Su-Huai; Al-Jassim, Mowafak M.; Turner, John; Yan, Yanfa

    2010-07-01

    Here, we propose general strategies for the rational design of semiconductors to simultaneously meet all of the requirements for a high-efficiency, solar-driven photoelectrochemical (PEC) water-splitting device. As a case study, we apply our strategies for engineering the popular semiconductor, anatase TiO2 . Previous attempts to modify known semiconductors such as TiO2 have often focused on a particular individual criterion such as band gap, neglecting the possible detrimental consequence to other important criteria. Density-functional theory calculations reveal that with appropriate donor-acceptor coincorporation alloys with anatase TiO2 hold great potential to satisfy all of the criteria for a viable PEC device. We predict that (Mo, 2N) and (W, 2N) are the best donor-acceptor combinations in the low-alloy concentration regime whereas (Nb, N) and (Ta, N) are the best choice of donor-acceptor pairs in the high-alloy concentration regime.

  16. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  17. Properties- and applications of quasicrystals and complex metallic alloys.

    Science.gov (United States)

    Dubois, Jean-Marie

    2012-10-21

    This article aims at an account of what is known about the potential for applications of quasicrystals and related compounds, the so-called family of Complex Metallic Alloys (CMAs‡). Attention is focused at aluminium-based CMAs, which comprise a large number of crystalline compounds and quasicrystals made of aluminium alloyed with transition metals (like Fe or Cu) or normal metals like Mg. Depending on composition, the structural complexity varies from a few atoms per unit cell up to thousands of atoms. Quasicrystals appear then as CMAs of ultimate complexity and exhibit a lattice that shows no periodicity anymore in the usual 3-dimensional space. Properties change dramatically with lattice complexity and turn the metal-type behaviour of simple Al-based crystals into a far more complex behaviour, with a fingerprint of semi-conductors that may be exploited in various applications, potential or realised. An account of the ones known to the author is given in the light of the relevant properties, namely light absorption, reduced adhesion and friction, heat insulation, reinforcement of composites for mechanical devices, and few more exotic ones. The role played by the search for applications of quasicrystals in the development of the field is briefly addressed in the concluding section.

  18. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  19. The effect of high-temperature treatment on the formation of nanoscale intermetallic compounds of transition metals in Al-Cu-Mn-Zr alloy

    Science.gov (United States)

    Monastyrska, Tetiana O.; Berezina, Alla L.; Labur, Tetiana M.; Molebny, Oleh A.; Kotko, Andrii V.

    2018-02-01

    The precipitation of intermetallic compounds of transition metals during aging of the Al-5.8%Cu-0.3%Mn-0.1%Zr alloy has been studied using DSC, resistometry, X-ray and transmission electron microscopy. In these age hardenable alloys, the nanoscale metastable Θ″ and Θ' phases of the Al2Cu compound are the main strengthening phases, which are formed at low temperature aging of T stresses, etc.) on the aging with the precipitation of strengthening phases has been investigated.

  20. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  1. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  2. Evolution of Iron-containing Compounds in Al-Cu Alloys during Heat Treatment

    Directory of Open Access Journals (Sweden)

    Liu Kun

    2016-01-01

    Full Text Available The evolution of iron-containing compounds in Al-Cu 206 cast alloy during solution treatment has been investigated. Results show that platelet β-Fe and Chinese script α-Fe are the two iron-containing compounds in as-cast condition. Little change is observed on β-Fe during solution treatment. However, fine blocky post β-Fe begins to form on α-Fe when solution treated at 520°C for 8hrs. When soaking time is extended to 24 hrs, α–Fe is found to decompose to fine branches while post β-Fe present as clusters on these branches. Al-Cu-Mg-Si Q phase is observed to form at the edge of decomposed α-Fe, possibly the result of Si from decomposed α-Fe.

  3. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  4. Improving of Corrosion Resistance of Aluminum Alloys by Removing Intermetallic Compound

    International Nuclear Information System (INIS)

    Seri, Osami

    2008-01-01

    It is well known that iron is one of the most common impurity elements sound in aluminum and its alloys. Iron in the aluminum forms an intermetallic compounds such as FeAl 3 . The FeAl 3 particles on the aluminum surface are one of the most detrimental phases to the corrosion process and anodizing procedure for aluminum and its alloys. Trial and error surface treatment will be carried out to find the preferential and effective removal of FeAl 3 particles on the surfaces without dissolution of aluminum matrix around the particles. One of the preferable surface treatments for the aim of getting FeAl 3 free surface was an electrochemical treatment such as cathodic current density of -2 kAm -2 in a 20-30 mass% HNO 3 solution for the period of 300s. The corrosion characteristics of aluminum surface with FeAl 3 free particles are examined in a 0.1 kmol/m 3 NaCl solution. It is found that aluminum with free FeAl 3 particles shows higher corrosion resistance than aluminum with FeAl 3 particles

  5. Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

    Science.gov (United States)

    Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

    2015-01-14

    Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

  6. Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

    Directory of Open Access Journals (Sweden)

    Shinji Yasui

    2012-01-01

    Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

  7. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  8. Electronic structure calculations on nitride semiconductors and their alloys

    International Nuclear Information System (INIS)

    Dugdale, D.

    2000-09-01

    Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial calculations are performed using the first principles pseudopotential method to obtain accurate lattice constants. Further calculations then investigate bonding in the nitrides through population analysis and density of state calculations. The empirical pseudopotential method is also used in this work. Pseudopotentials for each of the nitrides are constructed using a functional form that allows strained material and alloys to be studied. The conventional k.p valence band parameters for both zincblende and wurtzite are obtained from the empirical band structure using two different methods. A Monte-Carlo fitting of the k.p band structure to the pseudopotential data (or an effective mass method for the zincblende structure) is used to produce one set. Another set is obtained directly from the momentum matrix elements and energy eigenvalues at the centre of the Brillouin zone. Both methods of calculating k.p parameters produce band structure in excellent agreement with the original empirical band calculations near the centre of the Brillouin zone. The advantage of the direct method is that it produces consistent sets of parameters, and can be used in studies involving a series of alloy compositions. Further empirical pseudopotential method calculations are then performed for alloys of the nitrides. In particular, the variation of the band gap with alloy composition is investigated, and good agreement with theory and experiment is found. The direct method is used to obtain k.p parameters for the alloys, and is contrasted with the fitting approach. The behaviour of the nitrides under strain is also studied. In particular. valence band offsets for nitride heterojunctions are calculated, and a strong forward- backward asymmetry in the band offset is found, in good agreement with other results in the literature. (author)

  9. On the effect of Nb-based compounds on the microstructure of Al–12Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Bolzoni, L., E-mail: leandro.bolzoni@brunel.ac.uk; Nowak, M.; Hari Babu, N.

    2015-07-15

    Cast Al alloys are important structural materials for the lightweighting of cars and, consequently, reduction of greenhouse gases emission and pollution. The microstructure and properties of cast Al alloys could be further improved by means of grain refinement, practise which cannot efficiently be performed with common Al–Ti–B grain refiners used for wrought Al alloys. In this work we proposed the employment of Nb+B inoculation as an alternative for the refinement of the primary α-Al dendrites of cast Al–Si alloy by studying the grain refinement induced by the Nb+B inoculants as a function of key aspects such as cooling rate, fading behaviour and simulated recyclability tests. It is found that the grain size of the Nb+B inoculated material is noticeably less sensitive to the cooling rate. Nb+B inoculants are still present and promote the refinement of the Al–12Si alloy even after few hours of contact time, although some fading is detected. Furthermore, Nb+B inoculants are also still effective for enhancing heterogeneous nucleation after three remelting of the inoculated alloy. The fading behaviour and ability to retain grain refining potency after remelting are highly relevant to industrial scale applications. - Highlights: • The influence of Nb+B inoculation on Al–12SSi is assessed. • The grain size decreases along with the amount of Nb+B compounds. • Nb+B inoculation makes the grain size less sensitive from the cooling rate. • Grain refinement is obtained via heterogeneous nucleation.

  10. On the effect of Nb-based compounds on the microstructure of Al–12Si alloy

    International Nuclear Information System (INIS)

    Bolzoni, L.; Nowak, M.; Hari Babu, N.

    2015-01-01

    Cast Al alloys are important structural materials for the lightweighting of cars and, consequently, reduction of greenhouse gases emission and pollution. The microstructure and properties of cast Al alloys could be further improved by means of grain refinement, practise which cannot efficiently be performed with common Al–Ti–B grain refiners used for wrought Al alloys. In this work we proposed the employment of Nb+B inoculation as an alternative for the refinement of the primary α-Al dendrites of cast Al–Si alloy by studying the grain refinement induced by the Nb+B inoculants as a function of key aspects such as cooling rate, fading behaviour and simulated recyclability tests. It is found that the grain size of the Nb+B inoculated material is noticeably less sensitive to the cooling rate. Nb+B inoculants are still present and promote the refinement of the Al–12Si alloy even after few hours of contact time, although some fading is detected. Furthermore, Nb+B inoculants are also still effective for enhancing heterogeneous nucleation after three remelting of the inoculated alloy. The fading behaviour and ability to retain grain refining potency after remelting are highly relevant to industrial scale applications. - Highlights: • The influence of Nb+B inoculation on Al–12SSi is assessed. • The grain size decreases along with the amount of Nb+B compounds. • Nb+B inoculation makes the grain size less sensitive from the cooling rate. • Grain refinement is obtained via heterogeneous nucleation

  11. The physics of semiconductors an introduction including nanophysics and applications

    CERN Document Server

    Grundmann, Marius

    2016-01-01

    The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

  12. Novel phase diagram behavior and materials design in heterostructural semiconductor alloys.

    Science.gov (United States)

    Holder, Aaron M; Siol, Sebastian; Ndione, Paul F; Peng, Haowei; Deml, Ann M; Matthews, Bethany E; Schelhas, Laura T; Toney, Michael F; Gordon, Roy G; Tumas, William; Perkins, John D; Ginley, David S; Gorman, Brian P; Tate, Janet; Zakutayev, Andriy; Lany, Stephan

    2017-06-01

    Structure and composition control the behavior of materials. Isostructural alloying is historically an extremely successful approach for tuning materials properties, but it is often limited by binodal and spinodal decomposition, which correspond to the thermodynamic solubility limit and the stability against composition fluctuations, respectively. We show that heterostructural alloys can exhibit a markedly increased range of metastable alloy compositions between the binodal and spinodal lines, thereby opening up a vast phase space for novel homogeneous single-phase alloys. We distinguish two types of heterostructural alloys, that is, those between commensurate and incommensurate phases. Because of the structural transition around the critical composition, the properties change in a highly nonlinear or even discontinuous fashion, providing a mechanism for materials design that does not exist in conventional isostructural alloys. The novel phase diagram behavior follows from standard alloy models using mixing enthalpies from first-principles calculations. Thin-film deposition demonstrates the viability of the synthesis of these metastable single-phase domains and validates the computationally predicted phase separation mechanism above the upper temperature bound of the nonequilibrium single-phase region.

  13. Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

    Directory of Open Access Journals (Sweden)

    Ryosuke Motoyoshi

    2010-01-01

    Full Text Available Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS- based solar cells with titanium dioxide (TiO2 were produced on F-doped SnO2 (FTO. A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO- and cuprous oxide- (Cu2O- based solar cells with fullerene (C60 were also fabricated on FTO and indium tin oxide (ITO. The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

  14. Method to induce a conductivity type in a semiconductor

    International Nuclear Information System (INIS)

    Aboaf, J.A.; Sedgwick, T.O.

    1977-01-01

    The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

  15. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  16. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  17. Mixing of III-V compound semiconductor superlattices

    International Nuclear Information System (INIS)

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

  18. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  19. Formation of chemical compounds under vacuum plasma-arc deposition of nickel and its alloy onto piezoceramics

    International Nuclear Information System (INIS)

    Grinchenko, V.T.; Lyakhovich, T.K.; Prosina, N.I.; Khromov, S.M.

    1988-01-01

    The phase composition of the transition layer appearing during vacuum-arc coating of nickel and nickel alloy with copper on barium titanate and lead zirconate-titanate is identified. During vacuum plasma-arc coating of nickel and its alloy at the boundary with barium titanate and lead zirconate-titanate the Ni 2 Ti 4 O compound appears which has the crystal lattice type identical with substrate with the parity of lattice parameters. The transition layer contains nickel oxides and NiTiO 3 in the case of barium titanate. When titanate content in substrate increases the zone of reaction diffusion increases in value and becomes more complicate in composition

  20. Synthesis and Characterization of Nanocrystalline Ni50Al50-xMox (X=0-5 Intermetallic Compound During Mechanical Alloying Process

    Directory of Open Access Journals (Sweden)

    A. Khajesarvi

    2015-07-01

    Full Text Available In the present study, nanocrystalline Ni50Al50-xMox (X = 0, 0.5, 1, 2.5, 5 intermetallic compound was produced through mechanical alloying of nickel, aluminum, and molybdenum powders. AlNi compounds with good and attractive properties such as high melting point, high strength to weight ratio and high corrosion resistance especially at high temperatures have attracted the attention of many researchers. Powders produced from milling were analyzed using scanning electron microscopy (SEM and X-ray diffractometry (XRD. The results showed that intermetallic compound of NiAl formed at different stage of milling operation. It was concluded that at first disordered solid solution of (Ni,Al was formed then it converted into ordered intermetallic compound of NiAl. With increasing the atomic percent of molybdenum, average grain size decreased from 3 to 0.5 μm. Parameter lattice and lattice strain increased with increasing the atomic percent of molybdenum, while the crystal structure became finer up to 10 nm. Also, maximum microhardness was obtained for NiAl49Mo1 alloy.

  1. Improving of Corrosion Resistance of Aluminum Alloys by Removing Intermetallic Compound

    Energy Technology Data Exchange (ETDEWEB)

    Seri, Osami [Muroran it., Hokkaido (Japan)

    2008-06-15

    It is well known that iron is one of the most common impurity elements sound in aluminum and its alloys. Iron in the aluminum forms an intermetallic compounds such as FeAl{sub 3}. The FeAl{sub 3} particles on the aluminum surface are one of the most detrimental phases to the corrosion process and anodizing procedure for aluminum and its alloys. Trial and error surface treatment will be carried out to find the preferential and effective removal of FeAl{sub 3} particles on the surfaces without dissolution of aluminum matrix around the particles. One of the preferable surface treatments for the aim of getting FeAl{sub 3} free surface was an electrochemical treatment such as cathodic current density of -2 kAm{sup -2} in a 20-30 mass% HNO{sub 3} solution for the period of 300s. The corrosion characteristics of aluminum surface with FeAl{sub 3} free particles are examined in a 0.1 kmol/m{sup 3} NaCl solution. It is found that aluminum with free FeAl{sub 3} particles shows higher corrosion resistance than aluminum with FeAl{sub 3} particles.

  2. Pulse-height loss in the signal readout circuit of compound semiconductor detectors

    Science.gov (United States)

    Nakhostin, M.; Hitomi, K.

    2018-06-01

    Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

  3. ELECTRICAL PROPERTIES OF COMPOUNDS AND ALLOYS OF RARE-EARTH METALS WITH ELEMENTS OF GROUPS V AND VI

    Energy Technology Data Exchange (ETDEWEB)

    Reid, F. J.; Matson, L. K.; Miller, J. F.; Himes, R. C.

    1963-04-15

    The electric properties of rare earth compounds and alloys with As, Sb, Se, and Te are reported. Without exception, samples of Se and Te compounds with normally trivalent Nd, Gd, and Ce having synthetic compositions, MX and M/sub 3/X/ sub 4/, are n-type wrth free electron concentrations in the range 10/sup 20/ to 10 /sup 22//cm/sup 3/, and have very low electric resistivities. Room temperature electric properties and thermoelectric data are tabulated. (P.C H.)

  4. Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films

    Science.gov (United States)

    Takasuna, Shoichi; Shiogai, Junichi; Matsuzaka, Shunichiro; Kohda, Makoto; Oyama, Yutaka; Nitta, Junsaku

    2017-10-01

    Magnetoconductance (MC) at low temperature was measured to investigate spin-related transport affected by spin-orbit interaction (SOI) in III-VI compound n -type GaSe thin films. Results reveal that MC shows weak antilocalization (WAL). Its temperature and gate voltage dependences reveal that the dominant spin relaxation is governed by the D'yakonov-Perel' mechanism associated with the Rashba SOI. The estimated Rashba SOI strength in GaSe is much stronger than that of III-V compound GaAs quantum wells, although the energy gap and spin split-off band in GaSe closely resemble those in GaAs. The angle dependence of WAL amplitude in the in-plane magnetic field direction is almost isotropic. This isotropy indicates that the strength of the Dresselhaus SOI is negligible compared with the Rashba SOI strength. The SOI effect in n -GaSe thin films differs greatly from those of III-V compound semiconductors and transition-metal dichalcogenides.

  5. Effect of compound field on horizontal continuous casting of Al-1wt.%Si alloy

    OpenAIRE

    Zhong-tao Zhang; Hong-yun Yue; Jian Zhang

    2015-01-01

    A travelling magnetic field, a power ultrasonic field, and a compound field were used separately during the horizontal continuous casting process of Al-1wt.%Si alloy. The samples obtained were characterized using an optical microscope, a scanning electron microscope, a tensile testing machine, and an electron probe microscopic analyzer to test the microstructures, properties, and element distribution of the samples. The results show that the application of a single field can enhance the mecha...

  6. Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As

    International Nuclear Information System (INIS)

    Shihab, S.; Thevenard, L.; Bardeleben, H. J. von; Gourdon, C.; Riahi, H.; Lemaître, A.

    2015-01-01

    We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a k≈0 wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions

  7. Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

    KAUST Repository

    Ng, Tien Khee; Zhao, Chao; Priante, Davide; Ooi, Boon S.; Hussein, Mohamed Ebaid Abdrabou

    2018-01-01

    Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

  8. Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

    KAUST Repository

    Ng, Tien Khee

    2018-02-01

    Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

  9. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Science.gov (United States)

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  10. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  11. Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1-xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys.

    Science.gov (United States)

    Laref, Amel; AlMudlej, Abeer; Laref, Slimane; Yang, Jun Tao; Xiong, Yong-Chen; Luo, Shi Jun

    2017-07-07

    Ab-initio calculations are performed to examine the electronic structures and magnetic properties of spin-polarized Ga 1- x Mn x P ( x = 0.03, 0.25, 0.5, and 0.75) ternary alloys. In order to perceive viable half-metallic (HM) states and unprecedented diluted magnetic semiconductors (DMSs) such as spintronic materials, the full potential linearized augmented plane wave method is utilized within the generalized gradient approximation (GGA). In order to tackle the correlation effects on 3d states of Mn atoms, we also employ the Hubbard U (GGA + U) technique to compute the magnetic properties of an Mn-doped GaP compound. We discuss the emerged global magnetic moments and the robustness of half-metallicity by varying the Mn composition in the GaP compound. Using GGA + U, the results of the density of states demonstrate that the incorporation of Mn develops a half-metallic state in the GaP compound with an engendered band gap at the Fermi level ( E F ) in the spin-down state. Accordingly, the half-metallic feature is produced through the hybridization of Mn-d and P-p orbitals. However, the half-metallic character is present at a low x composition with the GGA procedure. The produced magnetic state occurs in these materials, which is a consequence of the exchange interactions between the Mn-element and the host GaP system. For the considered alloys, we estimated the X-ray absorption spectra at the K edge of Mn. A thorough clarification of the pre-edge peaks is provided via the results of the theoretical absorption spectra. It is inferred that the valence state of Mn in Ga 1- x Mn x P alloys is +3. The predicted theoretical determinations surmise that the Mn-incorporated GaP semiconductor could inevitably be employed in spintronic devices.

  12. Empirical tight-binding modeling of ordered and disordered semiconductor structures

    International Nuclear Information System (INIS)

    Mourad, Daniel

    2010-01-01

    In this thesis, we investigate the electronic and optical properties of pure as well as of substitutionally alloyed II-VI and III-V bulk semiconductors and corresponding semiconductor quantum dots by means of an empirical tight-binding (TB) model. In the case of the alloyed systems of the type A x B 1-x , where A and B are the pure compound semiconductor materials, we study the influence of the disorder by means of several extensions of the TB model with different levels of sophistication. Our methods range from rather simple mean-field approaches (virtual crystal approximation, VCA) over a dynamical mean-field approach (coherent potential approximation, CPA) up to calculations where substitutional disorder is incorporated on a finite ensemble of microscopically distinct configurations. In the first part of this thesis, we cover the necessary fundamentals in order to properly introduce the TB model of our choice, the effective bond-orbital model (EBOM). In this model, one s- and three p-orbitals per spin direction are localized on the sites of the underlying Bravais lattice. The matrix elements between these orbitals are treated as free parameters in order to reproduce the properties of one conduction and three valence bands per spin direction and can then be used in supercell calculations in order to model mixed bulk materials or pure as well as mixed quantum dots. Part II of this thesis deals with unalloyed systems. Here, we use the EBOM in combination with configuration interaction calculations for the investigation of the electronic and optical properties of truncated pyramidal GaN quantum dots embedded in AlN with an underlying zincblende structure. Furthermore, we develop a parametrization of the EBOM for materials with a wurtzite structure, which allows for a fit of one conduction and three valence bands per spin direction throughout the whole Brillouin zone of the hexagonal system. In Part III, we focus on the influence of alloying on the electronic and

  13. Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

    International Nuclear Information System (INIS)

    Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

    2008-01-01

    In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

  14. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  15. Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75 Alloys

    Directory of Open Access Journals (Sweden)

    Amel Laref

    2017-07-01

    Full Text Available Ab-initio calculations are performed to examine the electronic structures and magnetic properties of spin-polarized Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75 ternary alloys. In order to perceive viable half-metallic (HM states and unprecedented diluted magnetic semiconductors (DMSs such as spintronic materials, the full potential linearized augmented plane wave method is utilized within the generalized gradient approximation (GGA. In order to tackle the correlation effects on 3d states of Mn atoms, we also employ the Hubbard U (GGA + U technique to compute the magnetic properties of an Mn-doped GaP compound. We discuss the emerged global magnetic moments and the robustness of half-metallicity by varying the Mn composition in the GaP compound. Using GGA + U, the results of the density of states demonstrate that the incorporation of Mn develops a half-metallic state in the GaP compound with an engendered band gap at the Fermi level (EF in the spin–down state. Accordingly, the half-metallic feature is produced through the hybridization of Mn-d and P-p orbitals. However, the half-metallic character is present at a low x composition with the GGA procedure. The produced magnetic state occurs in these materials, which is a consequence of the exchange interactions between the Mn-element and the host GaP system. For the considered alloys, we estimated the X-ray absorption spectra at the K edge of Mn. A thorough clarification of the pre-edge peaks is provided via the results of the theoretical absorption spectra. It is inferred that the valence state of Mn in Ga1−xMnxP alloys is +3. The predicted theoretical determinations surmise that the Mn-incorporated GaP semiconductor could inevitably be employed in spintronic devices.

  16. Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

    KAUST Repository

    Hussain, Aftab M.; Singh, Nirpendra; Fahad, Hossain M.; Rader, Kelly; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well

  17. Effect of nano/micro-Ag compound particles on the bio-corrosion, antibacterial properties and cell biocompatibility of Ti-Ag alloys.

    Science.gov (United States)

    Chen, Mian; Yang, Lei; Zhang, Lan; Han, Yong; Lu, Zheng; Qin, Gaowu; Zhang, Erlin

    2017-06-01

    In this research, Ti-Ag alloys were prepared by powder metallurgy, casting and heat treatment method in order to investigate the effect of Ag compound particles on the bio-corrosion, the antibacterial property and the cell biocompatibility. Ti-Ag alloys with different sizes of Ag or Ag-compounds particles were successfully prepared: small amount of submicro-scale (100nm) Ti 2 Ag precipitates with solid solution state of Ag, large amount of nano-scale (20-30nm) Ti 2 Ag precipitates with small amount of solid solution state of Ag and micro-scale lamellar Ti 2 Ag phases, and complete solid solution state of Ag. The mechanical tests indicated that both nano/micro-scale Ti 2 Ag phases had a strong dispersion strengthening ability and Ag had a high solid solution strengthening ability. Electrochemical results shown the Ag content and the size of Ag particles had a limited influence on the bio-corrosion resistance although nano-scale Ti 2 Ag precipitates slightly improved corrosion resistance. It was demonstrated that the nano Ag compounds precipitates have a significant influence on the antibacterial properties of Ti-Ag alloys but no effect on the cell biocompatibility. It was thought that both Ag ions release and Ti 2 Ag precipitates contributed to the antibacterial ability, in which nano-scale and homogeneously distributed Ti 2 Ag phases would play a key role in antibacterial process. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Combined effects of ultrasonic vibration and manganese on Fe-containing inter-metallic compounds and mechanical properties of Al-17Si alloy with 3wt.%Fe

    Directory of Open Access Journals (Sweden)

    Lin Chong

    2013-05-01

    Full Text Available The research studied the combined effects of ultrasonic vibration (USV and manganese on the Fe-containing inter-metallic compounds and mechanical properties of Al-17Si-3Fe-2Cu-1Ni (wt.% alloys. The results showed that, without USV, the alloys with 0.4wt.% Mn or 0.8wt.% Mn both contain a large amount of coarse plate-like δ-Al4(Fe,MnSi2 phase and long needle-like β-Al5(Fe,MnSi phase. When the Mn content changes from 0.4wt.% to 0.8wt.% in the alloys, the amount and the length of needle-like β-Al5(Fe,MnSi phase decrease and the plate-like δ-Al4(Fe,MnSi2 phase becomes much coarser. After USV treatment, the Fe-containing compounds in the alloys are refined and exist mainly as δ-Al4(Fe,MnSi2 particles with an average grain size of about 20 μm, and only a small amount of β-Al5(Fe,MnSi phase remains. With USV treatment, the ultimate tensile strengths (UTS of the alloys containing 0.4wt.%Mn and 0.8wt.%Mn at room temperature are 253 MPa and 262 MPa, respectively, and the ultimate tensile strengths at 350 °C are 129 MPa and 135 MPa, respectively. It is considered that the modified morphology and uniform distribution of the Fe-containing inter-metallic compounds, which are caused by the USV process, are the main reasons for the increase in the tensile strength of these two alloys.

  19. Chemical method for producing nanoscale semiconductor compound CdS in a polymer matrix; Khimicheskij metod polucheniya nanorazmernogo poluprovodnikovogo soedineniya CdS v polimernoj matritse

    Energy Technology Data Exchange (ETDEWEB)

    Goglidze, Natalia; Dement' ev, Igor' ; Zadorozhnyj, Aleksandru; Koval' , Andrej; Gashin, Petr [Moldavskij gosudarstvennyj univ., Chisinau (Moldova, Republic of); Gutsul, Tatiana; Taraburkin, Aleksandr [Academiya nauk Moldovy, Chisinau (Moldova, Republic of)

    2012-07-15

    The results of cadmium sulfide synthesis in a polymer matrix from cadmium stearate and tiourea are given. Luminescent properties of the obtained materials were studied. It was shown that the elaborated method allows to efficiently synthesize 2-6 semiconductor compounds with the nano-granulated particles in various organic media including biopolymers. (authors)

  20. Liquid alloys: New perspectives and challenges

    International Nuclear Information System (INIS)

    Saboungi, M.L.; Leonard, S.R.; Johnson, G.K.; Price, D.L.

    1987-12-01

    In this paper, we will focus on one of many unusual liquid semiconducting alloys, K-Pb. The thermodynamic and electrical properties will be discussed and analyzed in terms of a disorder model introduced first by Wagner for crystalline semiconductors. The structure of the equiatomic alloy will be presented; interpretation of the first sharp diffraction peak in the total structure factor is based on the local structures in the crystalline phase and should be viewed as an example of the interrelation between the solid and liquid properties

  1. Molecular semiconductors photoelectrical properties and solar cells

    CERN Document Server

    Rees, Ch

    1985-01-01

    During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

  2. The role of rare earths in narrow energy gap semiconductors

    International Nuclear Information System (INIS)

    Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

    1991-01-01

    Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

  3. Method for estimating the lattice thermal conductivity of metallic alloys

    International Nuclear Information System (INIS)

    Yarbrough, D.W.; Williams, R.K.

    1978-08-01

    A method is described for calculating the lattice thermal conductivity of alloys as a function of temperature and composition for temperatures above theta/sub D//2 using readily available information about the atomic species present in the alloy. The calculation takes into account phonon interactions with point defects, electrons and other phonons. Comparisons between experimental thermal conductivities (resistivities) and calculated values are discussed for binary alloys of semiconductors, alkali halides and metals. A discussion of the theoretical background is followed by sufficient numerical work to facilitate the calculation of lattice thermal conductivity of an alloy for which no conductivity data exist

  4. SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

    Directory of Open Access Journals (Sweden)

    Euclides J. Velazco Rivero

    2018-04-01

    Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature (θ

  5. Diffusion in semiconductors, other than silicon compilation

    CERN Document Server

    Fisher, David J

    2011-01-01

    Review from Book News Inc.: Summary reports of 337 experiments provide information on the diffusion of matter and heat in 31 materials used in semiconductors. Most of the compounds are based on cadmium, gallium, indium, lead, and zinc. Mercury telluride is included however, as is silicon carbide for some reason. Each article is thoroughly referenced to the authors and publication number, date, and page. The arrangement is alphabetical by semiconductor material. Indexes cover authors, hosts, and diffusants.

  6. PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.; Salunke, R. S.; Mahajan, A. M., E-mail: ammahajan@nmu.ac.in [North Maharashtra University, Department of Electronics, School of Physical Sciences (India)

    2017-01-15

    The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

  7. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  8. Treatment of compounds and alloys in radiation hydrodynamics simulations of ablative laser loading

    International Nuclear Information System (INIS)

    Swift, Damian C.; Gammel, J. Tinka; Clegg, Samuel M.

    2004-01-01

    Different methods were compared for constructing models of the behavior of a prototype intermetallic compound, nickel aluminide, for use in radiation hydrodynamics simulations of shock wave generation by ablation induced by laser energy. The models included the equation of state, ionization, and radiation opacity. The methods of construction were evaluated by comparing the results of simulations of an ablatively generated shock wave in a sample of the alloy. The most accurate simulations were obtained using the 'constant number density' mixture model to calculate the equation of state and opacity, and Thomas-Fermi ionization. This model is consistent with that found to be most accurate for simulations of ablatively shocked elements

  9. High pressure study of the zinc phosphide semiconductor compound in two different phases

    International Nuclear Information System (INIS)

    Mokhtari, Ali

    2009-01-01

    Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

  10. High pressure study of the zinc phosphide semiconductor compound in two different phases

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

    2009-07-08

    Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

  11. Molding compound development with semiconductor PKGs; Handotai PKG doko to fushi jushi zairyo

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, I. [NEC Corp., Tokyo (Japan)

    1998-11-05

    This paper describes the semiconductor packaging and molding compound materials. Major constituents of the molding resins are epoxy resin and inorganic silica, to which various additives are added. In order to make thin packages, biphenyl-based resins with low viscosity are often used in response to high fluidity. To fill the clearance less than 100 {mu}m, size adjusting techniques of the inorganic silica are also significant apart from resins. Since it is heated under the water absorption condition for the packaging in substrates, low water absorption, high adhesion, high strength and low stress are required to avoid peeling and cracking due to the vapor pressure of moisture. Generation of voids is also a problem. Improvement of productivity by reducing the processing period is also significant. In response to the strict environmental regulation, disuse of brominated epoxy and antimony oxide which are flame retardants in the molding resins is an urgent problem to be solved. For the epoxy resins, bisphenol A is to be regulated as a mutation substance. The cost reduction is required with keeping current quality kept. 1 fig.

  12. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  13. Selection of efficient etchants for nondestructive treatment of semiconductors

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Fomin, A.V.; Tomashik, Z.F.

    1996-01-01

    The scheme for studying etching processes of semiconductor materials and developing new etchants for different semiconductors is proposed. The scheme includes the experiment mathematical planning, computerized physicochemical modeling, kinetic studies, investigation of surface layers, formed by etching. Such on approach makes it possible to optimize the etchant composition in every concrete cage. The scheme is tested in the course of developing optimal methodologies of preepitaxial treatment and selection of etchants composition for semiconductor compounds of the A 1 B 6 and A 3 B 5 type. 13 refs., 4 figs

  14. Automated capacitive spectrometer for measuring the parameters of deep centers in semiconductor materials

    International Nuclear Information System (INIS)

    Shajmeev, S.S.

    1985-01-01

    An automated capacitive spectrometer for determining deep centers parameters in semiconductor materials and instruments is described. The facility can be used in studying electrically active defects (impurity, radiation, thermal) having deep levels in the forbidden semiconductor zone. The facility permits to determine the following parameters of the deep centers: concentration of each deep level taken separately within 5x10 -1 +-5x10 -15 of the alloying impurity concentration, level energy position in the forbidden semiconductor zone in the range from 0.08 MeV above the valency zone ceiling to 0.08 eV below the conductivity zone bottom, hole or electron capture cross-section on the deep center; concentration profile of deep levels

  15. Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

    Science.gov (United States)

    Samedov, Victor V.

    2018-01-01

    Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

  16. Ternary alloys based on II-VI semiconductor compounds

    CERN Document Server

    Tomashyk, Vasyl; Shcherbak, Larysa

    2013-01-01

    Phase Equilibria in the Systems Based on ZnSSystems Based on ZnSeSystems Based on ZnTeSystems Based on CdSSystem Based on CdSeSystem Based on CdTeSystems Based on HgSSystems Based on HgSeSystems Based on HgTeIndexReferences appear at the end of each chapter.

  17. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  18. Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

    KAUST Repository

    Liu, Kaikai

    2017-11-30

    The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.

  19. Strengthening Aluminum Alloys for High Temperature Applications Using Nanoparticles of Al203 and Al3-X Compounds (X= Ti, V, Zr)

    Science.gov (United States)

    Lee, Jonathan A.

    2007-01-01

    In this paper the effect of nanoparticles A12O3 and A13-X compounds (X= Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their chemical stability and low diffusions rates in aluminum matrix at high temperatures. The strengthening mechanism for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. Samples were prepared from A12O3 nanoparticle preforms, which were produced using ceramic injection molding process and pressure infiltrated by molten aluminum. A12O3 nanoparticles can also be homogeneously mixed with aluminum powder and consolidated into samples through hot pressing and sintering. On the other hand, the Al3-X nanoparticles are produced as precipitates via in situ reactions with molten aluminum alloys using conventional casting techniques. The degree of alloy strengthening using nanoparticles will depend on the materials, particle size, shape, volume fraction, and mean inter-particle spacing.

  20. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    International Nuclear Information System (INIS)

    Ullah, Hamid; Inayat, Kalsoom; Khan, S.A; Mohammad, S.; Ali, A.; Alahmed, Z.A.; Reshak, A.H.

    2015-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga 1−x Mn x X (X=P, As) compounds reveal that Ga 0.75 Mn 0.25 P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As and tune Ga 0.25 Mn 0.75 As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga 0.75 Mn 0.25 P, Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices

  1. Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

    OpenAIRE

    Linnik, M.; Christou, A.

    2001-01-01

    The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

  2. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.; Jiang, Chao; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a

  3. Effect of crystalline electric fields and long-range magnetic order on superconductivity in rare earth alloys and compounds

    International Nuclear Information System (INIS)

    McCallum, R.W.

    1977-01-01

    The behavior of rare earth ions in a superconducting matrix has been studied in two distinct regimes. First, the effects of crystal field splitting of the 4f levels of a magnetic rare earth ion in the alloy system (LaPr)Sn 3 were investigated in the limit of low Pr 3+ concentration. In this system the rare earth impurity ions occupy random La sites in the crystal lattice. Second, the interaction of long-range magnetic order and superconductivity was explored in the ternary rare earth molybdenum chalcogenide systems. In these compounds the rare earth ions occupy periodic lattice sites in contrast to the random distribution of magnetic ions in dilute impurity alloy systems such as (LaPr)Sn 3

  4. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

    International Nuclear Information System (INIS)

    Jyegal, Jang

    2015-01-01

    Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices

  5. Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

    Science.gov (United States)

    Kim, Il-Ho

    2018-05-01

    Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

  6. Attachment to a mass spectrometer for studying the processes of semiconductor compound deposition from a gaseous phase

    International Nuclear Information System (INIS)

    Belousov, V.I.; Zhuravlev, G.I.; Popenko, N.I.; Novozhilov, A.F.; Matveev, I.V.; Murav'ev, V.V.

    1984-01-01

    An attachment to the mass spectrometer for studying the processes of semiconductor compounds deposition from a gaseous phase at the pressure of 1x10 5 Pa and the temperature of 400-1300 K is described. The attachment consists of the Neer ion source with ionization section cooled upto the temperature of liquid nitrogen, a two-zone vacuum furnace, and a quartz epitaxy reactor of the horzontal type.The attachment is equipped with the systems of process gas distribution in 5 flows and temperature stabilization. The rate of mass spectrum recording constitutes 2 mass/s at the resolution being equal to 1000 at the 10% level. The sensitivity at the steam-gas mixture components partial pressure determination constitutes 1x10 -4 Pa

  7. Organic materials for semiconductor. Epoxy molding compound for IC encapsulation; Handotai kanren no yuki zairyo. Handotai fushiyo epoxy seikei zairyo ni tsuite

    Energy Technology Data Exchange (ETDEWEB)

    Kusuhara, A. [Sumitomo Bakelite Co. Ltd., Tokyo (Japan)

    1998-11-05

    This paper describes organic materials for semiconductor. Based on the composition and raw material, typical materials are epoxy resins, curing agents including phenol-novolak resins, fillers including silica and alumina, flame retardants including brominated epoxy resin and antimony oxide, hardening accelerators including amine compounds and phosphorus compounds, coupling agents including silane compounds and titanate compounds, and the others including colorants and mold lubricants. Raw materials are heated and kneaded after mixing, and produced as tablets after cooling and crushing. Recently, the packages have changed from insertion type to surface mounting type for the small thin IC package and for improving the efficiency of soldering during the incorporation of IC package on the print circuit substrate. High temperature of 260degC has been employed from the conventional limit of 100degC. Reduction of water absorption, improvement of adhesion, reduction of thermal expansion coefficient, and reduction of elastic modulus during heating are promoted for avoiding the peeling and cracking due to the sudden evaporation of adsorbed moisture. This paper also describes the organic materials for BGA. 10 figs., 4 tabs.

  8. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor

    Science.gov (United States)

    Hamdani, K.; Chaouche, M.; Benabdeslem, M.; Bechiri, L.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Otmani, A.; Marie, P.

    2014-11-01

    Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3 materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 105 cm-1 and present a band gap of 0.94 eV.

  9. Defects and diffusion in semiconductors XIV

    CERN Document Server

    Fisher, David J

    2012-01-01

    This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

  10. Photoconductivity response time in amorphous semiconductors

    Science.gov (United States)

    Adriaenssens, G. J.; Baranovskii, S. D.; Fuhs, W.; Jansen, J.; Öktü, Ö.

    1995-04-01

    The photoconductivity response time of amorphous semiconductors is examined theoretically on the basis of standard definitions for free- and trapped-carrier lifetimes, and experimentally for a series of a-Si1-xCx:H alloys with xgeneration rate and temperature. As no satisfactory agreement between models and experiments emerges, a simple theory is developed that can account for the experimental observations on the basis of the usual multiple-trappping ideas, provided a small probability of direct free-carrier recombination is included. The theory leads to a stretched-exponential photocurrent decay.

  11. CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

    International Nuclear Information System (INIS)

    Kheloufi, Nawal; Bouzid, Abderrazak

    2016-01-01

    We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  12. Phase constitution and corrosion resistance of Al–Co alloys

    Energy Technology Data Exchange (ETDEWEB)

    Palcut, Marián, E-mail: marian.palcut@gmail.com; Priputen, Pavol; Šalgó, Kristián; Janovec, Jozef

    2015-09-15

    Al–24Co, Al–25Co, Al–26Co, Al–27Co and Al–28Co alloys (composition in atomic percent) were prepared by arc-melting in high purity argon. Each alloy was found to consist of several microstructure constituents. Precipitation sequences of different intermetallic compounds were described based on a previously published Al–Co phase diagram and non-equilibrium processes taking place during casting. Electrochemical corrosion was investigated by potentiodynamic polarization in aqueous NaCl solution at room temperature. A large amount of pitting is observed, with some of the phases being preferentially corroded. The nobility of Al–Co intermetallic compounds is discussed in terms of chemical composition and crystal structure. Conclusions towards the alloy stability are provided. - Highlights: • Al–24Co to Al–28Co alloys were prepared by arc-melting in high purity argon. • Precipitation sequences of different intermetallic compounds have been observed. • Anodic alloy dissolution takes place by galvanic mechanism. • Nobility of Al–Co intermetallic compounds increases with increasing Co concentration.

  13. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  14. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    Energy Technology Data Exchange (ETDEWEB)

    Marchewka, M., E-mail: marmi@ur.edu.pl; Woźny, M.; Polit, J.; Sheregii, E. M. [Faculty of Mathematics and Natural Sciences, Centre for Microelectronics and Nanotechnology, University of Rzeszów, Pigonia 1, 35-959 Rzeszów (Poland); Kisiel, A. [Institute of Physics, Jagiellonian University, Reymonta 4, Kraków 30-059 (Poland); Robouch, B. V.; Marcelli, A. [INFN-Laboratori Nazionali di Frascati, Via E. Fermi 40, I-00044 Frascati (Italy)

    2014-03-21

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III–V and II–VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra.

  15. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    International Nuclear Information System (INIS)

    Marchewka, M.; Woźny, M.; Polit, J.; Sheregii, E. M.; Kisiel, A.; Robouch, B. V.; Marcelli, A.

    2014-01-01

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III–V and II–VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra

  16. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    Science.gov (United States)

    Marchewka, M.; Woźny, M.; Polit, J.; Kisiel, A.; Robouch, B. V.; Marcelli, A.; Sheregii, E. M.

    2014-03-01

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III-V and II-VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra.

  17. Interfacial trap states in junctions of molecular semiconductors

    International Nuclear Information System (INIS)

    Schlettwein, D.; Oekermann, T.; Jaeger, N.; Armstrong, N.R.; Woehrle, D.

    2002-01-01

    Interfacial states that were established in contacts of molecular semiconductors with aqueous electrolytes or in contacts with another organic semiconductor as a solid film were analyzed by photoelectrochemical experiments and by photoelectron spectroscopy. A crucial role of such states was indicated in the interfacial charge transfer and recombination kinetics of light-induced charge carriers and also in the energetic alignment in the solid contacts. Unsubstituted zinc-phthalocyanine (PcZn) served as model compound. The role of chemical interactions in the establishment of these interfacial states was investigated by use of different reaction partners, i.e., different redox couples in the electrolyte contacts and molecular semiconductors of different ionization potential in the solid contacts. Implications of these results for the use of organic semiconductor thin films in devices of molecular electronics and of dye molecules in dye-sensitized solar cells were also discussed

  18. Magnetic properties of diluted magnetic semiconductors

    NARCIS (Netherlands)

    Jonge, de W.J.M.; Swagten, H.J.M.

    1991-01-01

    A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be

  19. New materials and structures for photovoltaics

    Science.gov (United States)

    Zunger, Alex; Wagner, S.; Petroff, P. M.

    1993-01-01

    Despite the fact that over the years crystal chemists have discovered numerous semiconducting substances, and that modern epitaxial growth techniques are able to produce many novel atomic-scale architectures, current electronic and opto-electronic technologies are based but on a handful of ˜10 traditional semiconductor core materials. This paper surveys a number of yet-unexploited classes of semiconductors, pointing to the much-needed research in screening, growing, and characterizing promising members of these classes. In light of the unmanageably large number of a-priori possibilities, we emphasize the role that structural chemistry and modern computer-aided design must play in screening potentially important candidates. The basic classes of materials discussed here include nontraditional alloys, such as non-isovalent and heterostructural semiconductors, materials at reduced dimensionality, including superlattices, zeolite-caged nanostructures and organic semiconductors, spontaneously ordered alloys, interstitial semiconductors, filled tetrahedral structures, ordered vacancy compounds, and compounds based on d and f electron elements. A collaborative effort among material predictor, material grower, and material characterizer holds the promise for a successful identification of new and exciting systems.

  20. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  1. Byproduct-free mass production of compound semiconductor nanowires: zinc phosphide

    Science.gov (United States)

    Chen, Yixi; Polinnaya, Rakesh; Vaddiraju, Sreeram

    2018-05-01

    A method for the mass production of compound semiconductor nanowires that involves the direct reaction of component elements in a chemical vapor deposition chamber (CVD) is presented. This method results in nanowires, without the associated production of any other byproducts such as nanoparticles or three-dimensional (3D) bulk crystals. Furthermore, no unreacted reactants remain mixed with the nanowire product in this method. This byproduct-free nanowire production thus circumvents the need to tediously purify and collect nanowires from a mixture of products/reactants after their synthesis. Demonstration made using zinc phosphide (Zn3P2) material system as an example indicated that the direct reaction of zinc microparticles with phosphorus supplied via the vapor phase results in the production of gram quantities of nanowires. To enhance thermal transport and achieve the complete reaction of zinc microparticles, while simultaneously ensuring that the microparticles do not agglomerate into macroscale zinc particles and partly remain unreacted (owing to diffusion limitations), pellets composed of mixtures of zinc and a sacrificial salt, NH4Cl, were employed as the starting material. The sublimation by decomposition of NH4Cl in the early stages of the reaction leaves a highly porous pellet of zinc composed of only zinc microparticles, which allows for inward diffusion of phosphorus/outward diffusion of zinc and the complete conversion of zinc into Zn3P2 nanowires. NH4Cl also aids in removal of any native oxide layer present on the zinc microparticles that may prevent their reaction with phosphorus. This method may be used to mass produce many other nanowires in a byproduct-free manner, besides Zn3P2.

  2. Photocatalysis of irradiated semiconductor surfaces: Its application to water splitting and some organic reactions

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, T

    1985-05-01

    Hydrogen production from organic compounds and water was investigated using powdered semiconductor photocatalysts. The complete decomposition observed for several organic compounds demonstrated that water is involved in the reactions as an oxidizing agent. Photocatalyses of dyes and semiconductors were found to be applicable to amino acid synthesis. The quantum yields of photocatalytic amino acid synthesis using visible light are about 20%-40% in the absence of a metal catalyst such as platinum. Moreover the reactions are highly selective and depend strongly on the type of semiconductor. This method was applied to the asymmetric synthesis of amino acids using asymmetric catalysts. Rather high optical yields of 50% were achieved for the synthesis of L-phenylalanine.

  3. Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures

    CERN Document Server

    Harrison, Paul

    2016-01-01

    Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...

  4. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  5. Carbon Alloys-Multi-functionalization

    Energy Technology Data Exchange (ETDEWEB)

    Yasuda, Eiichi [MSL, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)], E-mail: yasuda.e.aa.@m.titech.ac.jp; Enami, Takashi; Hoteida, Nobuyuki [MSL, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Lanticse-Diaz, L.J. [University of the Philippines (Philippines); Tanabe, Yasuhiro [Nagoya University (Japan); Akatsu, Takashi [MSL, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)

    2008-02-25

    Last decade after our proposal of the 'Carbon Alloys' concept, many different kinds of Carbon Alloys, such as carbon nanotubes, carbon nanofibers, graphene sheet with magnetism, semi-conducting BCN compounds, graphite intercalation compounds, exfoliated carbon fiber, etc. have been found and developed. To extend the concept further, it is important to make it into intelligent materials by incorporating multiple functions. One example of the multi-functionalization is the development of homo-atomic Carbon Alloys from glassy carbon (GC) that exhibits high electrical conductivity and low gas permeability after treatment at critical conditions. Glassy carbon underwent metamorphosis to graphite spheres at HIP condition, and improved resistance to oxidation after alloying with Ta. The other one is shape utilization of the nano-sized carbon by understanding the effect of its large surfaces or interfaces in nanotechnology treatment. Recently carbon nanofiber was produced by polymer blend technology (PB) which was proposed by Prof. A. Oya during the Carbon Alloy project and progressed into intelligent carbon nanofiber (CNF) materials. CNF is combined into the polymer composites which is a candidate material for the bipolar separator in fuel cell. The superior properties, i.e., high electrical conductivity, high modulus, high strength, etc., of the CNF is being utilized in the preparation of this polymer composite.

  6. CdS{sub x}Te{sub 1-x} ternary semiconductors band gaps calculation using ground state and GW approximations

    Energy Technology Data Exchange (ETDEWEB)

    Kheloufi, Nawal; Bouzid, Abderrazak, E-mail: a_bouzid34@hotmail.com

    2016-06-25

    We present band gap calculations of zinc-blende ternary CdS{sub x}Te{sub 1-x} semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd{sup +20} pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd{sup 20+} pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd{sup 12+} and the LDA within Cd{sup 20+} pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS{sub x}Te{sub 1-x} compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  7. The MOCVD challenge a survey of GaInAsp-InP and GaInAsp-GaAs for photonic and electronic device applications

    CERN Document Server

    Razeghi, Manijeh

    2010-01-01

    Introduction to Semiconductor Compounds III-V semiconductor alloys III-V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III-V binaries by RDS RDS investigation of III-V lattice-matched heterojunctions RDS investigation of III-V lattice-mismatched structures Insights on the growt

  8. First principles examination of electronic structure and optical features of 4H-GaN1-xPx polytype alloys

    Science.gov (United States)

    Laref, A.; Hussain, Z.; Laref, S.; Yang, J. T.; Xiong, Y. C.; Luo, S. J.

    2018-04-01

    By using first-principles calculations, we compute the electronic band structures and typical aspects of the optical spectra of hexagonally structured GaN1-xPx alloys. Although a type III-V semiconductor, GaP commonly possesses a zinc-blende structure with an indirect band gap; as such, it may additionally form hexagonal polytypes under specific growth conditions. The electronic structures and optical properties are calculated by combining a non-nitride III-V semiconductor and a nitride III-V semiconductor, as GaP and GaN crystallizing in a 4H polytype, with the N composition ranging between x = 0-1. For all studied materials, the energy gap is found to be direct. The optical properties of the hexagonal materials may illustrate the strong polarization dependence owing to the crystalline anisotropy. This investigation for GaN1-xPx alloys is anticipated to supply paramount information for applications in the visible/ultraviolet spectral regions. At a specific concentration, x, these alloys would be exclusively appealing candidates for solar-cell applications.

  9. Study on electronic mobility in InGaAsP compounds

    International Nuclear Information System (INIS)

    Ceolin, M.F.

    1983-10-01

    We compute, from experimental data two important elements to the Knowledge of the mechanisms of charge transport in the InGaAsP semiconductor alloy: the density of ionizable impurities and the scattering potential by disorder of the lattice. (M.W.O.) [pt

  10. Blue emitting organic semiconductors under high pressure

    DEFF Research Database (Denmark)

    Knaapila, Matti; Guha, Suchismita

    2016-01-01

    This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure and inter......This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure...... and intermolecular self-organization that typically determine transport and optical emission in π-conjugated oligomers and polymers. In this context, hydrostatic pressure through diamond anvil cells has proven to be an elegant tool to control structure and interactions without chemical intervention. This has been...... and intermolecular interactions on optical excitations, electron–phonon interaction, and changes in backbone conformations. This picture is connected to the optical high pressure studies of other π-conjugated systems and emerging x-ray scattering experiments from polyfluorenes which provides a structure-property map...

  11. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Ullah, Hamid, E-mail: hamidullah@yahoo.com [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Inayat, Kalsoom [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Khan, S.A; Mohammad, S. [Department of Physics, Materials Modeling Laboratory, Hazara University, Mansehra 21300 (Pakistan); Ali, A. [Department of Advanced Materials Science & Engineering, Hanseo University, Seosan-si, Chungnam-do 356-706 (Korea, Republic of); Alahmed, Z.A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Reshak, A.H. [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)

    2015-07-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga{sub 1−x}Mn{sub x}X (X=P, As) compounds reveal that Ga{sub 0.75}Mn{sub 0.25}P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As and tune Ga{sub 0.25}Mn{sub 0.75}As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga{sub 0.75}Mn{sub 0.25}P, Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices.

  12. Absolute instability of polaron mode in semiconductor magnetoplasma

    Science.gov (United States)

    Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

    2018-01-01

    Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

  13. Epitaxial growth and optical investigations of ZnTeO alloys

    International Nuclear Information System (INIS)

    Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-01-01

    We have grown zincblende-structured ZnTeO alloy semiconductors on GaAs substrates by molecular beam epitaxy using RF-excited O. O concentrations measured by secondary ion mass spectroscopy were found to increase with the increase of O 2 flow rate supplied during the growth, while the change of lattice constant measured by X-ray diffraction does not follow Vegard's law. It is considered that the O atoms are incorporated not only into group-VI sites but also as interstitials. Formation of other compounds such as ZnTeO 3 , Zn 2 Te 3 O 8 , and TeO 2 was not detected. Optical reflectance spectroscopy revealed the increase of the band-gap energy with O concentration that can be interpreted as the repulsive interaction between the energy states originated in the localized states of O and the conduction-band edge of host ZnTe. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  14. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  15. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    Science.gov (United States)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  16. Evolution of Primary Fe-Rich Compounds in Secondary Al-Si-Cu Alloys

    Science.gov (United States)

    Fabrizi, Alberto; Capuzzi, Stefano; Timelli, Giulio

    Although iron is usually added in die cast Al-Si foundry alloys to prevent die soldering, primary Fe-rich particles are generally considered as "hardspot" inclusions which compromise the mechanical properties of the alloy, namely ductility and toughness. As there is no economical methods to remove the Fe excess in secondary Al-Si alloys at this time, the control of solidification process and chemical composition of the alloy is a common industrial practice to overcome the negative effects connected with the presence of Fe-rich particles. In this work, the size and morphology as well as the nucleation density of primary Fe-rich particles have been studied as function of cooling rate and alloy chemical composition for secondary Al-Si-Cu alloys. The solidification experiments were carried out using differential scanning calorimetry whereas morphology investigations were conducted using optical and scanning electron microscopy. Mcrosegregations and chemical composition of primary Fe-rich particles were examined by energy dispersive spectroscopy.

  17. Electronic properties and phase transitions in low-dimensional semiconductors

    International Nuclear Information System (INIS)

    Panich, A M

    2008-01-01

    We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX 2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I-V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX 2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor-metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed. (topical review)

  18. Structure and properties of alloys of A15 type compounds with carbon

    International Nuclear Information System (INIS)

    Savitskij, E.M.; Efimov, Yu.V.; Myasnikova, E.A.

    1983-01-01

    Microstructure and some properties of the alloys on the base of the phases of A15 type in the V-Si-C, Nb-Si-C, Nb-Sn-C, Nb-Al-C, Nb-Ga-C, V-Ga-C ternary systems are investigated. It is established that in the niobium-rich corners of the A-B-C ternary systems the new ternary conpounds do not form, as a rule, bUt the wide ranges of threephase equilibrium A-A 3 B-C exist. New ternary phases with A15 type structure stabilized with carbon are established only in the Nb-Si-C and V-Al-C systems. Alloying with carbon results in sharp refining of structural components of stable and metastable alloys, promotes transition of the alloys into amorphous state at super fast cooling of the melts as well as increases stability of metastable state of the alloys against tempering. After super fast quenching and tempering Tsub(c) of the ternary alloys close to the A15 phases exceed Tsub(c) of equilibrium samples

  19. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results of band structure and density of states, the half-metallic character and stability of ferromagnetic state for Cd1-xCoxS, Cd1-xCoxSe and Cd 1-xCoxTe alloys are determined. It is found that the tetrahedral crystal field gives rise to triple degeneracy t2g and double degeneracy eg. Furthermore, we predict the values of spin-exchange splitting energies Δx(d) and Δ x(p-d) and exchange constants N0α and N 0β produced by the Co 3d states. Calculated total magnetic moments and the robustness of half-metallicity of Cd1-xCo xX (X=S, Se, Te) with respect to the variation in lattice parameters are also discussed. We also extend our calculations to x=0.50, 0.75 for S compounds in order to observe the change due to increase in Co. © 2010 Elsevier B.V.

  20. Superconducting alloys

    International Nuclear Information System (INIS)

    Bowers, J.E.

    1976-01-01

    Reference is made to superconductors having high critical currents. The superconductor described comprises an alloy consisting of a matrix of a Type II superconductor which is a homogeneous mixture of 50 to 95 at.% Pb and 5 to 40 at.%Bi and/or 10 to 50 at.%In. Dispersed in the matrix is a material to provide pinning centres comprising from 0.01% to 20% by volume of the alloy; this material is a stable discontinuous phase of discrete crystalline particles of Cu, Mn, Te, Se, Ni, Ca, Cr, Ce, Ge or La, either in the form of the element or a compound with a component of the matrix. These particles should have an average diameter of not more than 2μ. A method for making this alloy is described. (U.K.)

  1. Acceptors in II-IV Semiconductors - Incorporation and Complex Formation

    CERN Multimedia

    2002-01-01

    A strong effort is currently devoted to the investigation of defects and the electrical activation of dopant atoms in II-VI semiconductors. In particular, the knowledge about the behaviour of acceptors, prerequisite for the fabrication of p-type semiconductors, is rather limited. The perturbed $\\,{\\gamma\\gamma}$ -angular correlation technique (PAC) and the photoluminescence spectroscopy (PL) using the radioactive isotopes $^{77}\\!$Br and $^{111}\\!$Ag will be applied for investigating the behaviour of acceptor dopant atoms and their interactions with defects in II-VI semiconductors. The main topic will be the identification of the technical conditions for the incorporation of electrically active acceptors in the II-VI semiconductors ~ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe with particular emphasis on the compounds~ CdTe, ZnSe, and ZnTe. The investigations will be supplemented by first exploratory PL experiments with the group V acceptors $^{71}\\!$As and $^{121}\\!$Sb. With help of the probe $^{111}\\!$Ag, the pos...

  2. New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

    International Nuclear Information System (INIS)

    Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

    1993-01-01

    New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

  3. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  4. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  5. Refractive index of ternary and quaternary compound semiconductors below the fundamental absorption edge: Linear and nonlinear effects

    International Nuclear Information System (INIS)

    Jensen, B.; Torabi, A.

    1985-01-01

    The index of refraction n is calculated as a function of frequency and mole fraction x for the following compounds: Hg/sub l-x/Cd/sub x/Te, Al/sub x/Ga/sub l-x/As, and In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ lattice matched to InP. Lattice matching of In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ to InP requires that x = 0.466 y. The theoretical result for the refractive index is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of the basic material parameters of band gap energy, effective electron mass m/sub n/, effective heavy hole mass m/sub rho/, spin orbit splitting energy, lattice constant, and carrier concentration n/sub e/ or rho for n-type or rho-type materials, respectively. If these quantities are known as functions of mole fraction x, there are no adjustable parameters involved. A negative change in the refractive index near the fundamental absorption edge is predicted on passing radiation through a crystal if the change in carrier concentration of the initially unoccupied conduction band is assumed proportional to internal intensity I. Comparison of theory with experimental data is given

  6. Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

    International Nuclear Information System (INIS)

    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R.

    2005-01-01

    Recently proposed model potential for describing the electron-ion interaction is employed to calculate total energy, energy band gap at Jones-zone face at X, equation of state and bulk modulus of GaP, GaAs and GaSb compounds using higher-order perturbation theory. The covalent correction term corresponding to third- and fourth-order perturbation energy terms are used to take account of covalent bonding effect in such semiconductors. The significant value of the covalent bonding term shows the essentiality of higher-order correction for zincblende-type crystals. We have employed five different screening functions along with the latest screening function proposed by Sarkar et al. in the present work. The numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data and found better than other such theoretical findings. The pressure and bulk modulus at different volumes are obtained by using such higher-order perturbation theory with the application of our model potential. The pressure obtained by this method is compared with pressure obtained by equations proposed by Murnarghan and Vinet et al. The present study also shows that the incorporation of different screening functions generates distinct effects

  7. Passivity of alloy C-22 in NaCl solutions

    International Nuclear Information System (INIS)

    Rodriguez, Martin A.; Carranza, Ricardo M.

    2004-01-01

    Alloy C-22 has been proposed as the corrosion resistant barrier of high-level waste nuclear containers. This alloy must be resistant to corrosion in multi-ionic solutions for a period of time as long as 10,000 years. The aim of the present work was to study the corrosion behavior of alloy C-22 in NaCl solutions. General and crevice corrosion were studied by means of electrochemical techniques. Open circuit potential was measured over the time, electrochemical impedance spectroscopy (EIS) measurements were carried out at open circuit and passivity potentials, as well as cyclic potentiodynamic polarization curves. Corrosion rates obtained by EIS measurements were acceptable for a waste nuclear container ( P ) values increased with open circuit potential and polarization time at constant potential. This was attributed to an increase in oxide film thickness and its aging respectively. The passive oxide form on alloy C-22 at the studied conditions presented a n-type semiconductor behavior in the passive potential range. Repassivation potential values (E R1 ) were determined for alloy C-22 at the studied conditions using PCA probes. (author) [es

  8. III-nitride semiconductors and their modern devices

    CERN Document Server

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  9. Effect of B addition to hypereutectic Ti-based alloys

    International Nuclear Information System (INIS)

    Louzguina-Luzgina, Larissa V.; Louzguine-Luzgin, Dmitri V.; Inoue, Akihisa

    2009-01-01

    The structure and mechanical properties of Ti-Fe-B and Ti-Fe-Co-B alloys produced in the shape of the arc-melted ingots of about 25 mm diameter and 10 mm height are studied. The hypereutectic alloys showed excellent compressive mechanical properties. The structures of the high-strength and ductile hypereutectic alloys studied by X-ray diffractometry and scanning electron microscopy were found to consist of the primary cubic cP2 intermetallic compound (TiFe-phase or a solid solution on its base) and a dispersed eutectic consisting of this cP2 intermetallic compound + BCC cI2 β-Ti supersaturated solid solution phase. The addition of B increased mechanical strength. Si causes embrittlement owing to the formation of alternative intermetallic compounds. The structure and deformation behaviour were studied

  10. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H P; Wei, B, E-mail: bbwei@nwpu.edu.c [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China)

    2009-02-07

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  11. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Science.gov (United States)

    Wang, H. P.; Wei, B.

    2009-02-01

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  12. The electrochemical reduction processes of solid compounds in high temperature molten salts.

    Science.gov (United States)

    Xiao, Wei; Wang, Dihua

    2014-05-21

    Solid electrode processes fall in the central focus of electrochemistry due to their broad-based applications in electrochemical energy storage/conversion devices, sensors and electrochemical preparation. The electrolytic production of metals, alloys, semiconductors and oxides via the electrochemical reduction of solid compounds (especially solid oxides) in high temperature molten salts has been well demonstrated to be an effective and environmentally friendly process for refractory metal extraction, functional materials preparation as well as spent fuel reprocessing. The (electro)chemical reduction of solid compounds under cathodic polarizations generally accompanies a variety of changes at the cathode/melt electrochemical interface which result in diverse electrolytic products with different compositions, morphologies and microstructures. This report summarizes various (electro)chemical reactions taking place at the compound cathode/melt interface during the electrochemical reduction of solid compounds in molten salts, which mainly include: (1) the direct electro-deoxidation of solid oxides; (2) the deposition of the active metal together with the electrochemical reduction of solid oxides; (3) the electro-inclusion of cations from molten salts; (4) the dissolution-electrodeposition process, and (5) the electron hopping process and carbon deposition with the utilization of carbon-based anodes. The implications of the forenamed cathodic reactions on the energy efficiency, chemical compositions and microstructures of the electrolytic products are also discussed. We hope that a comprehensive understanding of the cathodic processes during the electrochemical reduction of solid compounds in molten salts could form a basis for developing a clean, energy efficient and affordable production process for advanced/engineering materials.

  13. Grain refinement of 7075Al alloy microstructures by inoculation with Al-Ti-B master alloy

    Science.gov (United States)

    Hotea, V.; Juhasz, J.; Cadar, F.

    2017-05-01

    This paper aims to bring some clarification on grain refinement and modification of high strength alloys used in aerospace technique. In this work it was taken into account 7075 Al alloy, and the melt treatment was carried out by placing in the form of master alloy wire ternary AlTiB the casting trough at 730°C. The morphology of the resulting microstructures was characterized by optical microscopy. Micrographs unfinished and finished with pre-alloy containing ternary Al5Ti1B evidence fine crystals, crystal containing no columnar structure and highlights the size of the dendrites, and intermetallic phases occurring at grain boundaries in Al-Zn-Mg-Cu alloy. It has been found that these intermetallic compounds are MgZn2 type. AlTiB master alloys finishing ensures a fine eutectic structure, which determines the properties of hardware and improving the mechanical properties of aluminum alloys used in aeronautical engineering.

  14. Surface tension of liquid Cu-Ti binary alloys measured by electromagnetic levitation and thermodynamic modelling

    International Nuclear Information System (INIS)

    Amore, S.; Brillo, J.; Egry, I.; Novakovic, R.

    2011-01-01

    The surface tension of liquid Cu-Ti alloys has been measured by using the containerless technique of electromagnetic levitation and theoretically calculated in the framework of the compound formation model. Measurements have been carried out on alloys covering the entire range of composition and over the temperature range 1275-2050 K. For all investigated alloys the surface tension can be described by a linear function of the temperature with negative slope. Due to the presence of different intermetallic compounds in the solid state the surface properties of liquid Cu-Ti alloys are satisfactory described by the compound formation model.

  15. Alloy Effects on the Gas Nitriding Process

    Science.gov (United States)

    Yang, M.; Sisson, R. D.

    2014-12-01

    Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

  16. Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

    1995-11-01

    The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

  17. Catalyzed reactions at illuminated semiconductor interfaces

    International Nuclear Information System (INIS)

    Wrighton, M.S.

    1984-01-01

    Many desirable minority carrier chemical redox processes are too slow to compete with e - -h + recombination at illuminated semiconductor/liquid electrolyte junction interfaces. Reductions of H 2 O to H 2 or CO 2 to compounds having C--H bonds are too slow to compete with e - -h + recombination at illuminated p-type semiconductors, for example. Approaches to improve the rate of the desired processes involving surface modification techniques are described. Photoanodes are plagued by the additional problem of oxidative decomposition under illumination with > or =E/sub g/ illumination. The photo-oxidation of Cl - , Br - , and H 2 O is considered to illustrate the concepts involved. Proof of concept experiments establish that catalysis can be effective in dramatically improving direct solar fuel production; efficiencies of >10% have been demonstrated

  18. Insight on a novel layered semiconductors: CuTlS and CuTlSe

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Ziya S., E-mail: ziyasaliev@gmail.com [Institute of Catalysis and Inorganic Chemistry, ANAS, H.Javid ave. 113, AZ1143 Baku (Azerbaijan); Institute of Physics, ANAS, H.Javid ave. 131, AZ1143 Baku (Azerbaijan); Donostia International Physics Center (DIPC), 20080 San Sebastian (Spain); Zúñiga, Fco. Javier [Departamento de Física de la Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); Koroteev, Yury M. [Institute of Strength Physics and Materials Science, Russian Academy of Sciences, Siberian Branch, 634055 Tomsk (Russian Federation); Tomsk State University, Tomsk, 634050 (Russian Federation); Breczewski, Tomasz [Departamento de Física de la Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); Babanly, Nizamaddin B. [Institute of Catalysis and Inorganic Chemistry, ANAS, H.Javid ave. 113, AZ1143 Baku (Azerbaijan); Amiraslanov, Imamaddin R. [Institute of Physics, ANAS, H.Javid ave. 131, AZ1143 Baku (Azerbaijan); Politano, Antonio [Department of Physics, University of Calabria, 87036 Rende (CS) (Italy); Madariaga, Gotzon [Departamento de Física de la Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); Babanly, Mahammad B. [Institute of Catalysis and Inorganic Chemistry, ANAS, H.Javid ave. 113, AZ1143 Baku (Azerbaijan); and others

    2016-10-15

    Single crystals of the ternary copper compounds CuTlS and CuTlSe have been successfully grown from stoichiometric melt by using vertical Bridgman-Stockbarger method. The crystal structure of the both compounds has been determined by powder and single crystal X-Ray diffraction. They crystallize in the PbFCl structure type with two formula units in the tetragonal system, space group P4/nmm, a=3.922(2); c=8.123(6); Z=2 and a=4.087(6); c=8.195(19) Å; Z=2, respectively. The band structure of the reported compounds has been analyzed by means of full-potential linearized augmented plane-wave (FLAPW) method based on the density functional theory (DFT). Both compounds have similar band structures and are narrow-gap semiconductors with indirect band gap. The resistivity measurements agree with a semiconductor behavior although anomalies are observed at low temperature. - Graphical abstract: The crystal structures of CuTl and CuTlSe are isostructural with the PbFCl-type and the superconductor LiFeAs-type tetragonal structure. The band structure calculations confirmed that they are narrow-gap semiconductors with indirect band gaps of 0.326 and 0.083 eV. The resistivity measurements, although confirming the semiconducting behavior of both compounds exhibit unusual anomalies at low temperatures. - Highlights: • Single crystals of CuTlS and CuTlSe have been successfully grown by Bridgman-Stockbarger method. • The crystal structure of the both compounds has been determined by single crystal XRD. • The band structure of the both compounds has been analyzed based on the density functional theory (DFT). • The resistivity measurements have been carried out from room temperature down to 10 K.

  19. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  20. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  1. Lattice parameters of the Hg1-xFexSe and Cd1-xFexTe semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Sarem, A.; Soulayman, S.

    2004-01-01

    Full text.Hg 1-x Fe x Se and Cd 1-x Fe x Te are members of a family of semiconducting alloys referred to as diluted magnetic semiconductors (DMS), i.e., ternary alloys whose lattice is made up in part of substitutional magnetic ions (in the present case, fe 2+ ). These materials are of considerable interest because, apart from the opportunities provided by the ternary nature of these compounds (e.g., tunability of the energy gap or the lattice constant), they display interesting magnetic properties as well as exchange interaction between the localized Fe 2+ moments and band electrons, resulting in a host of novel effects. In this paper we investigate the behavior of the crystal lattice of Hg 1-x Fe x Se and Cd 1-x Fe x Te, grown using modified Bridgman method. The purpose of the study is providing precise quantitative data for the lattice parameter as a function of x, which can then be used as a means of determining composition. The results of lattice parameter measurements on the ternary semiconductor alloys Hg 1-x Fe x Se over the range (0≤x≤0.15) and Cd 1-x Fe x Te in the range (0≤x≤0.03) are reports. Each sample was subjected to chemical analysis for determining the real concentration of iron. Here it was found that the differences between the nominal compositions and the real ones for all investigated samples are negligible. The powdered samples of Hg 1-x Fe x Se and Cd 1-x Fe x Te with different nominal compositions were studied using a DRON diffractometer with filtered Cο radiation (λ kα1 =1.78892A; λ kα2 =1.79278A). The diffraction patterns with a scan rate of 1 degree 2θ/min were taken. Precise measurements of the line position diffracted and extrapolation method to determine a to value θ=90 degree were made by Least Square Method. This method allowed determining cell parameters foe each sample with accuracy ±0.0001A. The crystal structure of these compounds was determined as a cubic one of the zinc blede type. The structural homogeneity of

  2. Cast Aluminum Alloys for High Temperature Applications Using Nanoparticles Al2O3 and Al3-X Compounds (X = Ti, V, Zr)

    Science.gov (United States)

    Lee, Jonathan A.

    2009-01-01

    In this paper, the effect of nanoparticles Al2O3 and Al3-X compounds (X = Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their low cost, chemical stability and low diffusions rates in aluminum at high temperatures. The strengthening mechanism at high temperature for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. For Al2O3 nanoparticles, the test samples were prepared from special Al2O3 preforms, which were produced using ceramic injection molding process and then pressure infiltrated by molten aluminum. In another method, Al2O3 nanoparticles can also be homogeneously mixed with fine aluminum powder and consolidated into test samples through hot pressing and sintering. With the Al3-X nanoparticles, the test samples are produced as precipitates from in-situ reactions with molten aluminum using conventional permanent mold or die casting techniques. It is found that cast aluminum alloy using nanoparticles Al3-X is the most cost effective method to produce high strength aluminum alloys for high temperature applications in comparison to nanoparticles Al2O3. Furthermore, significant mechanical properties retention in high temperature environment could be achieved with Al3-X nanoparticles, resulting in tensile strength of nearly 3 times higher than most 300- series conventional cast aluminum alloys tested at 600 F.

  3. High-Energy Ball-Milling of Alloys and Compounds

    International Nuclear Information System (INIS)

    Le Caer, G.; Delcroix, P.; Begin-Colin, S.; Ziller, T.

    2002-01-01

    After outlining some characteristics of high-energy ball-milling, we discuss selected examples of phase transformation and of alloy synthesis which focus on deviations from archetypal behaviours and throw light on the milling mechanisms. Some contributions of Moessbauer spectrometry to the characterization of ground materials are described.

  4. Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Loitsch, Bernhard; Winnerl, Julia; Parzinger, Eric; Matich, Sonja; Wurstbauer, Ursula; Riedl, Hubert; Abstreiter, Gerhard; Finley, Jonathan J.; Koblmüller, Gregor [Walter Schottky Institut and Physik Department, Technische Universität München, 85748 Garching (Germany); Jeon, Nari; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Döblinger, Markus [Department of Chemistry, Ludwig-Maximilians-Universität Munich, 81377 München (Germany)

    2016-08-29

    Probing localized alloy fluctuations and controlling them by growth kinetics have been relatively limited so far in nanoscale structures such as semiconductor nanowires (NWs). Here, we demonstrate the tuning of alloy fluctuations in molecular beam epitaxially grown GaAs-AlGaAs core-shell NWs by modifications of shell growth temperature, as investigated by correlated micro-photoluminescence, scanning transmission electron microscopy, and atom probe tomography. By reducing the shell growth temperature from T > 600 °C to below 400 °C, we find a strong reduction in alloy fluctuation mediated sharp-line luminescence, concurrent with a decrease in the non-randomness of the alloy distribution in the AlGaAs shell. This trend is further characterized by a change in the alloy compositional structure from unintentional quasi-superlattices of Ga- and Al-rich AlGaAs layers at high T to a nearly homogeneous random alloy distribution at low T.

  5. The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

    International Nuclear Information System (INIS)

    Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

    2007-01-01

    Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Structural and elastic properties of AIBIIIC 2 VI semiconductors

    Science.gov (United States)

    Kumar, V.; Singh, Bhanu P.

    2018-01-01

    The plane wave pseudo-potential method within density functional theory has been used to calculate the structural and elastic properties of AIBIIIC 2 VI semiconductors. The electronic band structure, density of states, lattice constants (a and c), internal parameter (u), tetragonal distortion (η), energy gap (Eg), and bond lengths of the A-C (dAC) and B-C (dBC) bonds in AIBIIIC 2 VI semiconductors have been calculated. The values of elastic constants (Cij), bulk modulus (B), shear modulus (G), Young's modulus (Y), Poisson's ratio (υ), Zener anisotropy factor (A), Debye temperature (ϴD) and G/B ratio have also been calculated. The values of all 15 parameters of CuTlS2 and CuTlSe2 compounds, and 8 parameters of 20 compounds of AIBIIIC 2 VI family, except AgInS2 and AgInSe2, have been calculated for the first time. Reasonably good agreement has been obtained between the calculated, reported and available experimental values.

  7. Alloying effect on the electronic structures of hydrogen storage compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yukawa, H.; Moringa, M.; Takahashi, Y. [Nagoya Univ. (Japan). Dept. of Mater. Sci. and Eng.

    1997-05-20

    The electronic structures of hydrogenated LaNi{sub 5} containing various 3d transition elements were investigated by the DV-X{alpha} molecular orbital method. The hydrogen atom was found to form a strong chemical bond with the Ni rather than the La atoms. The alloying modified the chemical bond strengths between atoms in a small metal octahedron containing a hydrogen atom at the center, resulting in the change in the hydrogen absorption and desorption characteristics of LaNi{sub 5} with alloying. (orig.) 7 refs.

  8. Comparisons of microstructures and texture and mechanical properties of magnesium alloy fabricated by compound extrusion and direct extrusion

    Energy Technology Data Exchange (ETDEWEB)

    Hu, H.-J., E-mail: hhj@cqut.edu.cn [Chongqing University of Technology, Chongqing 400050 (China); PLA Chongqing Logistics Engineering College, 401311 (China); Ying, Y.-L. [Chongqing University of Technology, Chongqing 400050 (China); Ou, Z.-W. [PLA Chongqing Logistics Engineering College, 401311 (China); Wang, X.-Q. [The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2017-05-17

    In this study, microstructure evolution, textures and mechanical properties of AZ61 magnesium alloy were investigated by optical microscopy (OM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and tensile tests. The samples were processed by a new compound extrusion (CE) which combines direct extrusion (DE) and two steps of equal channel anger extrusion (ECAE). The results show that CE process can refine the microstructure more effectively than the DE process. The CE-fabricated samples have a weaker texture (0002), and a more fine and homogeneous microstructures, which attributes to the additional two steps of ECAE in CE process. In CE process, twin dynamic recrystallization and rotational dynamic recrystallization occurred, which enhances the refinement of the grains and weakening of the texture. In addition, the samples fabricated by CE process display a higher tensile properties (yield strength, tensile strength and elongation) with an excellent balance of strength and tensile ductility. Based on this study, severe plastic deformation (SPD) techniques combining conventional DE and two steps ECAE into a single process are feasibility to improve the mechanical properties of AZ61 Mg alloy.

  9. Effect of the reinforced boron carbide particulate content of AA6061 alloy on formation of the passive film in seawater

    International Nuclear Information System (INIS)

    Katkar, V.A.; Gunasekaran, G.; Rao, A.G.; Koli, P.M.

    2011-01-01

    Highlights: → Presence of boron carbide increases the corrosion rate of A6061 alloy in seawater. → Increasing the B 4 C content decreases passive layer thickness. → Passive films formed on A6061 and its B 4 C composites are n-type semiconductors. - Abstract: The effect of boron carbide (B 4 C) reinforcement on the corrosion of AA6061 alloy was studied by investigating passive films formed in seawater. The higher passive current and its potential-dependence for these composites indicated formation of porous passive film. Electrochemical impedance spectroscopy (EIS) graph suggests that the alloy surface is partly or totally active. The formed passive film is n-type semiconductor junction in nature. The difference between corrosion potential (E corr ) and potential at zero charge (PZC) suggests that the chloride ions responsible for film breakdown exist within the passive film. A suitable mechanism is proposed for the passive film breakdown.

  10. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  11. Intermetallic compound development for the 21st century

    International Nuclear Information System (INIS)

    Munroe, P.R.

    2000-01-01

    lntermetallic compounds have been vigorously researched for the past twenty years. As a result of these studies the fundamental behaviour of a number of transition metal aluminides and suicides is now well understood, and a number of alloys with commercially acceptable properties have been developed. Future challenges for these alloys, for example Ni 3 AI, TiAI and Fe 3 AI, are focused on the development of large-scale production routes. However, there remain a number of other intermetallic compounds, such as Laves phases, which exhibit some promising properties, but little is presently known about their intrinsic behaviour. For compounds such as these more fundamental studies are required

  12. FY 1997 report on the study on creation of inorganic materials under micro-gravity environment; 1997 nendo chosa hokokusho (bisho juryoku kankyo riyo muki zairyo no sosei kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Study was made on creation of new functional inorganic materials under micro-gravity condition in an underground non-gravity experiment center to develop new production techniques of inorganic crystalline thin film, fine glass particle, anharmonic alloy, spherical semiconductor and surface modified semiconductor thin film. The micro-gravity observation result was analyzed numerically of interference fringes of Cu ion around an electrode during electrolysis. Experimental data relatively well agreed with computer simulation data. Prototype CdTe thin film was prepared by electrolysis. The size control condition of fine true spherical glass particles was clarified by micro-gravity evaporation/condensation of glass. Pb-Zn system alloys as an anharmonic alloy were prepared under micro-gravity condition, however, no compound of Pb and Zn was found. A production equipment of true spherical single-crystalline semiconductor by melting cubic Ge under micro-gravity condition, and basic data of heating condition were obtained. Surface modified semiconductor thin film was also obtained by micro-gravity laser annealing of SiGe prepared by plasma CVD. 23 refs., 65 figs., 6 tabs.

  13. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  14. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  15. Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge with tunable band characteristics for potential spintronic applications

    Directory of Open Access Journals (Sweden)

    Xiaotian Wang

    2017-11-01

    Full Text Available Magnetic Heusler compounds (MHCs have recently attracted great attention since these types of material provide novel functionalities in spintronic and magneto-electronic devices. Among the MHCs, some compounds have been predicted to be spin-filter semiconductors [also called magnetic semiconductors (MSs], spin-gapless semiconductors (SGSs or half-metals (HMs. In this work, by means of first-principles calculations, it is demonstrated that rare earth-based equiatomic quaternary Heusler (EQH compounds with the formula MCoVZ (M = Lu, Y; Z = Si, Ge are new spin-filter semiconductors with total magnetic moments of 3 µB. Furthermore, under uniform strain, there are physical transitions from spin-filter semiconductor (MS → SGS → HM for EQH compounds with the formula LuCoVZ, and from HM → SGS → MS → SGS → HM for EQH compounds with the formula YCoVZ. Remarkably, for YCoVZ EQH compounds there are not only diverse physical transitions, but also different types of spin-gapless feature that can be observed with changing lattice constants. The structural stability of these four EQH compounds is also examined from the points of view of formation energy, cohesive energy and mechanical behaviour. This work is likely to inspire consideration of rare earth-based EQH compounds for application in future spintronic and magneto-electronic devices.

  16. Grain Refinement of Al-Si-Fe-Cu-Zn-Mn Based Alloy by Al-Ti-B Alloy and Its Effect on Mechanical Properties.

    Science.gov (United States)

    Yoo, Hyo-Sang; Kim, Yong-Ho; Jung, Chang-Gi; Lee, Sang-Chan; Lee, Seong-Hee; Son, Hyeon-Taek

    2018-03-01

    We investigated the effects of Al-5.0wt%Ti-1.0wt%B addition on the microstructure and mechanical properties of the as-extruded Al-0.15wt%Si-0.2wt%Fe-0.3wt%Cu-0.15wt%Zn-0.9wt%Mn based alloys. The Aluminum alloy melt was held at 800 °C and then poured into a mould at 200 °C. Aluminum alloys were hot-extruded into a rod that was 12 mm in thickness with a reduction ratio of 38:1. AlTiB addition to Al-0.15Si-0.2Fe-0.3Cu-0.15Zn-0.9Mn based alloys resulted in the formation of Al3Ti and TiB2 intermetallic compounds and grain refinement. With increasing of addition AlTiB, ultimate tensile strength increased from 93.38 to 99.02 to 100.01 MPa. The tensile strength of the as-extruded alloys was improved due to the formation of intermetallic compounds and grain refinement.

  17. Charge separation sensitized by advanced II-VI semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, David F. [Univ.of California, Merced, CA (United States)

    2017-04-11

    This proposal focuses on how the composition and morphology of pure and alloyed II-VI semiconductor heterostructures control their spectroscopic and dynamical properties. The proposed research will use a combination of synthesis development, electron microscopy, time-resolved electronic spectroscopy and modeling calculations to study these nanostructures. The proposed research will examine the extent to which morphology, compression due to lattice mismatch and alloy effects can be used to tune the electron and hole energies and the spectroscopic properties of II-VI heterojunctions. It will also use synthesis, optical spectroscopy and HRTEM to examine the role of lattice mismatch and hence lattice strain in producing interfacial defects, and the extent to which defect formation can be prevented by controlling the composition profile through the particles and across the interfaces. Finally, we will study the magnitude of the surface roughness in core/shell nanostructures and the role of shell thickness variability on the inhomogeneity of interfacial charge transfer rates.

  18. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.

    2010-06-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a computationally efficient way to describe the random nature. We systematically study the efficacy of the methodology and generate a number of special quasirandom cells for future use. In order to demonstrate the applicability of the technique, the electronic structures of E centers in Si1-xGex and Si1-x -yGexSny alloys are discussed for a range of nearest neighbor environments. © 2010 Elsevier B.V. All rights reserved.

  19. Simulation of the precipitation process of ordered intermetallic compounds in binary and ternary Ni-Al-based alloys by the phase-field model

    International Nuclear Information System (INIS)

    Hou Hua; Zhao Yuhong; Zhao Yuhui

    2009-01-01

    With the microscopic phase-field model, atomic-scale computer simulation programs for the precipitation mechanism of the ordered intermetallic compound γ' in binary Ni-15.5 at.%Al alloy, θ and γ' in ternary Ni 75 Al x V 25-x alloys were worked out based on the microscopic diffusion equation and non-equilibrium free energy. The simulation can be applied to the whole precipitation process and composition range. A prior assumptions on the new phase structure or transformation path was unnecessary, the possible non-equilibrium phases, atomic clustering and ordering could be described automatically, and atomic images, order parameters and volume fractions of precipitates were obtained. Computer simulation was performed systematically on the precipitation mechanism, precipitation sequence of θ and γ' in complicated system with ordering and clustering simultaneously. Through the simulated atomic images and chemical order parameters of precipitates, we can explain the complex precipitation mechanisms of θ (Ni 3 V) and γ' (Ni 3 Al) ordered phases. For the binary alloy, the precipitation mechanism of γ' phase has the characteristic of both non-classical nucleation and growth (NCNG) and congruent ordering and spinodal decomposition (COSD). For the ternary alloys, the precipitation characteristic of γ' phase transforms from NCNG to COSD gradually, otherwise, the precipitation characteristic of θ phase transforms from COSD to NCNG mechanism gradually

  20. TDPAC study of complex structure semiconductor compounds

    International Nuclear Information System (INIS)

    Shitu, J.; Renteria, M.; Massolo, C.P.; Bibiloni, A.G.; Desimoni, J.

    1992-01-01

    In this paper, a new method for analyzing Time-Differential Perturbed Angular Correlation spectra is presented and applied to study the hyperfine interaction of 100 Rh in the high temperature modification of niobium pentoxide. The measured quadrupole interactions are assigned to about 80% of the radioactive probes replacing niobium atoms in the lattice and about 20% located in perturbed sites. The origin of this perturbation, producing a high frequency component in the measured spectra is discussed and temptatively assigned to remaining radiation damage in the compound. The hyperfine interaction of 111 Cd probes, introduced through thermal diffusion into niobium pentoxide, is also presented. The temperature dependence of the hyperfine parameters in this case is studied in the temperature range RT-800 degrees C. The spectral analyzing method employed allows a direct comparison of experimental data with point charge model calculations and a simultaneous evaluation of the anti-shielding factor β. The obtained values (27 for 100 Rh and 15 for 111 Cd) are discussed in terms of the compound and probe's characteristics

  1. TDPAC study of complex structure semiconductor compounds

    International Nuclear Information System (INIS)

    Shitu, J.; Renteria, M.; Massolo, C.P.; Bibiloni, A.G.; Desimonni, J.

    1992-01-01

    In this paper, a new method for analyzing Time-Differential Perturbed Angular Correlation spectra is presented and applied to study the hyperfine interaction of 100 Rh in the high temperature modification of niobium pentoxide. The measured quadrupole interactions are assigned to about 80% of the radioactive probes replacing niobium atoms in the lattice and about 20% located in perturbed sites. The origin of this perturbation, producing a high frequency component in the measured spectra is discussed and temptatively assigned to remaining radiation damage in the compound. The hyperfine interaction of 111 Cd probes, introduced through thermal diffusion into niobium pentoxide, is also presented. The temperature dependence of the hyperfine parameters in this case is studied in the temperature range RT-800 degrees C. The spectral analyzing method employed allows a direct comparison of experimental data with point charge model calculations and a simultaneous evaluation of the antishielding factor β. The obtained values (27 for 100 Rh and 15 for 111 Cd) are discussed in terms of the compound and probe's characteristics

  2. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  3. Properties of boride-added powder metallurgy magnesium alloys

    Science.gov (United States)

    Tanaka, Atsushi; Yoshimura, Syota; Fujima, Takuya; Takagi, Ken-ichi

    2009-06-01

    Magnesium alloys with metallic borides, magnesium diboride (MgB2) or aluminum diboride (AlB2), were investigated regarding their mechanical properties, transverse rupture strength (TRS) and micro Vickers hardness (HV). The alloys were made from pure Mg, Al and B powders by mechanical alloying and hot pressing to have boride content of between 2.0 and 20 vol%. The alloy with AlB2 exhibited an obvious improvement of HV around a boride content of 6 vol% though the other alloy, with MgB2, did not. TRS showed moderate maxima around the same boride content region for the both alloys. X-ray diffraction measurements indicated an intermetallic compound, Mg17Al12, formed in the alloy with AlB2, which was consistent with its higher hardness.

  4. Properties of boride-added powder metallurgy magnesium alloys

    International Nuclear Information System (INIS)

    Tanaka, Atsushi; Yoshimura, Syota; Fujima, Takuya; Takagi, Ken-ichi

    2009-01-01

    Magnesium alloys with metallic borides, magnesium diboride (MgB 2 ) or aluminum diboride (AlB 2 ), were investigated regarding their mechanical properties, transverse rupture strength (TRS) and micro Vickers hardness (HV). The alloys were made from pure Mg, Al and B powders by mechanical alloying and hot pressing to have boride content of between 2.0 and 20 vol%. The alloy with AlB 2 exhibited an obvious improvement of HV around a boride content of 6 vol% though the other alloy, with MgB 2 , did not. TRS showed moderate maxima around the same boride content region for the both alloys. X-ray diffraction measurements indicated an intermetallic compound, Mg 17 Al 12 , formed in the alloy with AlB 2 , which was consistent with its higher hardness.

  5. On Ni/Au Alloyed Contacts to Mg-Doped GaN

    Science.gov (United States)

    Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2018-01-01

    Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

  6. Study on improved tribological properties by alloying copper to CP-Ti and Ti–6Al–4V alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Song [Biomechanics and Biotechnology Lab, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Ma, Zheng [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China); Liao, Zhenhua [Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Biomechanics and Biotechnology Lab, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Song, Jian [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Yang, Ke [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China); Liu, Weiqiang, E-mail: weiqliu@hotmail.com [Biomechanics and Biotechnology Lab, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2015-12-01

    Copper alloying to titanium and its alloys is believed to show an antibacterial performance. However, the tribological properties of Cu alloyed titanium alloys were seldom studied. Ti–5Cu and Ti–6Al–4V–5Cu alloys were fabricated in the present study in order to further study the friction and wear properties of titanium alloys with Cu additive. The microstructure, composition and hardness were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM) and hardness tester. The tribological behaviors were tested with ZrO{sub 2} counterface in 25% bovine serum using a ball-on-disc tribo-tester. The results revealed that precipitations of Ti{sub 2}Cu intermetallic compounds appeared in both Ti–5Cu and Ti–6Al–4V–5Cu alloys. The tribological results showed an improvement in friction and wear resistance for both Ti–5Cu and Ti–6Al–4V–5Cu alloys due to the precipitation of Ti{sub 2}Cu. The results also indicated that both CP-Ti and Ti–5Cu behaved better wear resistance than Ti–6Al–4V and Ti–6Al–4V–5Cu due to different wear mechanisms when articulated with hard zirconia. Both CP-Ti and Ti–5Cu revealed dominant adhesive wear with secondary abrasive wear mechanism while both Ti–6Al–4V and Ti–6Al–4V–5Cu showed severe abrasive wear and cracks with secondary adhesive wear mechanism due to different surface hardness integrated by their microstructures and material types. - Highlights: • Ti–5Cu and Ti–6Al–4V–5Cu alloys were fabricated with Cu additive. • Precipitations of Ti{sub 2}Cu intermetallic compounds appeared after alloying Cu. • The precipitation of Ti{sub 2}Cu improved both friction and wear resistance. • Plowing was the dominant material removal force with severe plowing phenomenon. • Different dominant and secondary wear mechanisms appeared with different hardness.

  7. Refining processes of selected copper alloys

    Directory of Open Access Journals (Sweden)

    S. Rzadkosz

    2009-04-01

    Full Text Available The analysis of the refining effectiveness of the liquid copper and selected copper alloys by various micro additions and special refiningsubstances – was performed. Examinations of an influence of purifying, modifying and deoxidation operations performed in a metal bath on the properties of certain selected alloys based on copper matrix - were made. Refining substances, protecting-purifying slag, deoxidation and modifying substances containing micro additions of such elements as: zirconium, boron, phosphor, sodium, lithium, or their compounds introduced in order to change micro structures and properties of alloys, were applied in examinations. A special attention was directed to macro and micro structures of alloys, their tensile and elongation strength and hot-cracks sensitivity. Refining effects were estimated by comparing the effectiveness of micro structure changes with property changes of copper and its selected alloys from the group of tin bronzes.

  8. Empirical tight-binding modeling of ordered and disordered semiconductor structures; Empirische Tight-Binding-Modellierung geordneter und ungeordneter Halbleiterstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Mourad, Daniel

    2010-11-30

    In this thesis, we investigate the electronic and optical properties of pure as well as of substitutionally alloyed II-VI and III-V bulk semiconductors and corresponding semiconductor quantum dots by means of an empirical tight-binding (TB) model. In the case of the alloyed systems of the type A{sub x}B{sub 1-x}, where A and B are the pure compound semiconductor materials, we study the influence of the disorder by means of several extensions of the TB model with different levels of sophistication. Our methods range from rather simple mean-field approaches (virtual crystal approximation, VCA) over a dynamical mean-field approach (coherent potential approximation, CPA) up to calculations where substitutional disorder is incorporated on a finite ensemble of microscopically distinct configurations. In the first part of this thesis, we cover the necessary fundamentals in order to properly introduce the TB model of our choice, the effective bond-orbital model (EBOM). In this model, one s- and three p-orbitals per spin direction are localized on the sites of the underlying Bravais lattice. The matrix elements between these orbitals are treated as free parameters in order to reproduce the properties of one conduction and three valence bands per spin direction and can then be used in supercell calculations in order to model mixed bulk materials or pure as well as mixed quantum dots. Part II of this thesis deals with unalloyed systems. Here, we use the EBOM in combination with configuration interaction calculations for the investigation of the electronic and optical properties of truncated pyramidal GaN quantum dots embedded in AlN with an underlying zincblende structure. Furthermore, we develop a parametrization of the EBOM for materials with a wurtzite structure, which allows for a fit of one conduction and three valence bands per spin direction throughout the whole Brillouin zone of the hexagonal system. In Part III, we focus on the influence of alloying on the electronic

  9. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

    NARCIS (Netherlands)

    Reiss, Peter; Carrière, Marie; Lincheneau, Christophe; Vaure, Louis; Tamang, Sudarsan

    2016-01-01

    We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive

  10. Transmutation doping of semiconductors by charged particles (review)

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.; Shustrov, B.A.

    1992-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monographs and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. An analysis is made of the modeling intended to give the total numbers of donors and acceptor impurities introduced by the NTD process, to optimize the compensation coefficients, and to estimate the distributions of the dopants with depth in a semiconductor crystal. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. In view of the specific objects that have been investigated experimntally, the second section is divided into three subsections: silicon, III-V compounds, other semiconductors and related materials (such as high-temperature superconductors, ferroelectric films, etc.). An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. 45 refs

  11. Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors

    CERN Document Server

    Vanderschaeve, G; Insa, P D T; Caillard, D

    2000-01-01

    TEM in situ straining experiments provide a unique way to investigate in real time the behaviour of individual dislocations under applied stress. The results obtained on a variety of semiconductors are presented: numerous dislocation sources are observed which makes it possible to measure the dislocation velocity as a function of different physical parameters (local shear stress, temperature, dislocation character, length of the moving dislocation, ...). The experimental results are consistent with a dislocation glide governed by the Peierls mechanism, even for II-VI compounds which have a significant degree of ionic character. For compounds, a linear dependence of the dislocation velocity on the length of the moving segment is noticed, whereas for elemental semiconductors a transition between a length-dependent and a length-independent velocity regime is observed. Analysed in the framework of the kink diffusion model (Hirth and Lothe theory), these results allow an estimation of the kink formation and migrat...

  12. [Differential study of the bonding characterization of dental porcelain to Ni-Cr alloys].

    Science.gov (United States)

    Wei, Fang; Zhan, De-song; Wang, Yan-yan

    2008-10-01

    To study the bonding capability when Ni-Cr porcelain alloy was added with Ti, compound rare earth metals and removed the element of Be. Ni-Cr-Ti porcelain alloys manufactured by Institute of Metal Research of Chinese Academy of Sciences were tested. The test alloys were divided into three groups according to whether containing Be and compound rare earth metals or not. And HI BOND Ni-Cr base-metal alloy was chosen as control. The metal-ceramic specimens were prepared for shear test, scanning electron microscope (SEM) and energy spectrum analysis. The shear bond strength of the four groups were analyzed. No significant difference were observed among them (P > 0.05). No crackle was found and they were contacted tightly between the porcelain and metal. The composition and contents of the four groups' interfaces were closed. The shear bond strength of the self-made Ni-Cr-Ti porcelain alloys all can satisfy the clinical requirements. Experimental groups containing Ti, compound rare earth metals and removing the element of Be can be used as better recommendation for clinical practice.

  13. Wavelength modulation spectroscopy of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kohn, S.E.

    1977-10-01

    The use of modulation spectroscopy to study the electronic properties of solids has been very productive. The construction of a wide range Wavelength Modulation Spectrometer to study the optical properties of solids is described in detail. Extensions of the working range of the spectrometer into the vacuum ultraviolet are discussed. Measurements of the reflectivity and derivative reflectivity spectra of the lead chalcogenides, the chalcopyrite ZnGeP/sub 2/, the layer compounds GaSe and GaS and their alloys, the ferroelectric SbSI, layer compounds SnS/sub 2/ and SnSe/sub 2/, and HfS/sub 2/ were made. The results of these measurements are presented along with their interpretation in terms of band structure calculations.

  14. Thermodynamic properties of uranium in gallium–aluminium based alloys

    International Nuclear Information System (INIS)

    Volkovich, V.A.; Maltsev, D.S.; Yamshchikov, L.F.; Chukin, A.V.; Smolenski, V.V.; Novoselova, A.V.; Osipenko, A.G.

    2015-01-01

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga–Al alloys containing 0.014–20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated. - Highlights: • Thermodynamics of uranium is determined in Ga–Al alloys of various compositions. • Uranium in the mixed alloys interacts with both components, Ga and Al. • Interaction of U with Al increases with decreasing temperature. • Activity and solubility of uranium depend on Al content in Ga–Al alloys.

  15. Thermodynamic properties of uranium in gallium–aluminium based alloys

    Energy Technology Data Exchange (ETDEWEB)

    Volkovich, V.A., E-mail: v.a.volkovich@urfu.ru [Department of Rare Metals and Nanomaterials, Institute of Physics and Technology, Ural Federal University, Ekaterinburg, 620002 (Russian Federation); Maltsev, D.S.; Yamshchikov, L.F. [Department of Rare Metals and Nanomaterials, Institute of Physics and Technology, Ural Federal University, Ekaterinburg, 620002 (Russian Federation); Chukin, A.V. [Department of Theoretical Physics and Applied Mathematics, Institute of Physics and Technology, Ural Federal University, Ekaterinburg, 620002 (Russian Federation); Smolenski, V.V.; Novoselova, A.V. [Institute of High-Temperature Electrochemistry UD RAS, Ekaterinburg, 620137 (Russian Federation); Osipenko, A.G. [JSC “State Scientific Centre - Research Institute of Atomic Reactors”, Dimitrovgrad, 433510 (Russian Federation)

    2015-10-15

    Activity, activity coefficients and solubility of uranium was determined in gallium-aluminium alloys containing 1.6 (eutectic), 5 and 20 wt.% aluminium. Additionally, activity of uranium was determined in aluminium and Ga–Al alloys containing 0.014–20 wt.% Al. Experiments were performed up to 1073 K. Intermetallic compounds formed in the alloys were characterized by X-ray diffraction. Partial and excess thermodynamic functions of U in the studied alloys were calculated. - Highlights: • Thermodynamics of uranium is determined in Ga–Al alloys of various compositions. • Uranium in the mixed alloys interacts with both components, Ga and Al. • Interaction of U with Al increases with decreasing temperature. • Activity and solubility of uranium depend on Al content in Ga–Al alloys.

  16. Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

    International Nuclear Information System (INIS)

    Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

    1981-01-01

    Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination

  17. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Directory of Open Access Journals (Sweden)

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  18. Properties of boride-added powder metallurgy magnesium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Yoshimura, Syota; Fujima, Takuya; Takagi, Ken-ichi [Department of Mechanical Engineering, Tokyo City University 1-28-1 Tamazutsumi, Setagaya, Tokyo 158-8557 (Japan)], E-mail: ktakagi@tcu.ac.jp

    2009-06-01

    Magnesium alloys with metallic borides, magnesium diboride (MgB{sub 2}) or aluminum diboride (AlB{sub 2}), were investigated regarding their mechanical properties, transverse rupture strength (TRS) and micro Vickers hardness (HV). The alloys were made from pure Mg, Al and B powders by mechanical alloying and hot pressing to have boride content of between 2.0 and 20 vol%. The alloy with AlB{sub 2} exhibited an obvious improvement of HV around a boride content of 6 vol% though the other alloy, with MgB{sub 2}, did not. TRS showed moderate maxima around the same boride content region for the both alloys. X-ray diffraction measurements indicated an intermetallic compound, Mg{sub 17}Al{sub 12}, formed in the alloy with AlB{sub 2}, which was consistent with its higher hardness.

  19. Silumins alloy crystallization

    Directory of Open Access Journals (Sweden)

    S. Pietrowski

    2009-07-01

    Full Text Available This paper presents the results of research, by ATD method, of hypo-, near- and hyperutectic silumins crystallization containing the following alloying additives: Mg, Ni, Cu, Cr, Mo, W, V. It has been shown that, depending on their concentration may crystallize pre-eutectic or eutectic multicomponent phases containing these alloy additives. It has been revealed that any subsequent crystallizable phase nucleate and grows near the liquid/former crystallized phase interface. In multiphases compound also falls the silicon, resulting in a reduction in its quantity and the fragmentation in the eutectic mixture. As a result, it gets a high hardness of silumins in terms of 110-220HB.

  20. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  1. Application of multicomponent diffusion theory for description of impurities distribution in complex diffusive doping of semiconductors

    International Nuclear Information System (INIS)

    Uskov, V.A.; Kondrachenko, O.E.; Kondrachenko, L.A.

    1977-01-01

    A phenomenological theory of multicomponent diffusion involving interaction between the components is employed to analyze how the interaction between two admixtures affects their simultaneous or consequent diffusion into a semiconductor. The theory uses the equations of multicomponent dissusion under common conditions (constant diffusion coefficients and equilibrium distribution of vacancies). The experiments are described on In and Sb simultaneous diffusion into Ge. The diffusion is performed according to the routine gas phase technology with the use of radioactive isotopes In 114 and Sb 124 . It is shown that the introduction of an additional diffusion coefficient D 12 makes it possible to simply and precisely describe the distribution of interacting admixtures in complex diffusion alloying of semiconductors

  2. Study on microstructure and properties of Mg-alloy surface alloying layer fabricated by EPC

    Directory of Open Access Journals (Sweden)

    Chen Dongfeng

    2010-02-01

    Full Text Available AZ91D surface alloying was investigated through evaporative pattern casting (EPC technology. Aluminum powder (0.074 to 0.104 mm was used as the alloying element in the experiment. An alloying coating with excellent properties was fabricated, which mainly consisted of adhesive, co-solvent, suspending agent and other ingredients according to desired proportion. Mg-alloy melt was poured under certain temperature and the degree of negative pressure. The microstructure of the surface layer was examined by means of scanning electron microscopy. It has been found that a large volume fraction of network new phases were formed on the Mg-alloy surface, the thickness of the alloying surface layer increased with the alloying coating increasing from 0.3 mm to 0.5 mm, and the microstructure became compact. Energy dispersive X-ray (EDX analysis was used to determine the chemical composition of the new phases. It showed that the new phases mainly consist of β-Mg17Al12, in addition to a small quantity of inter-metallic compounds and oxides. A micro-hardness test and a corrosion experiment to simulate the effect of sea water were performed. The result indicated that the highest micro-hardness of the surface reaches three times that of the matrix. The corrosion rate of alloying samples declines to about a fifth of that of the as-cast AZ91D specimen.

  3. Development of amorphous and nanocrystalline Al65Cu35-xZrx alloys by mechanical alloying

    International Nuclear Information System (INIS)

    Manna, I.; Chattopadhyay, P.P.; Banhart, F.; Fecht, H.J.

    2004-01-01

    Mechanical alloying of Al 65 Cu 35-x Zr x (x=5, 15 and 25 at.% Zr) elemental powder blends by planetary ball milling up to 50 h yields amorphous and/or nanocrystalline products. Microstructure of the milled product at different stages of milling has been characterized by X-ray diffraction, (XRD) high-resolution transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Among the different alloys synthesized by mechanical alloying, Al 65 Cu 20 Zr 15 yields a predominantly amorphous product, while the other two alloys develop a composite microstructure comprising nanocrystalline and amorphous solid solutions in Al 65 Cu 10 Zr 25 and nano-intermetallic phase/compound in Al 65 Cu 30 Zr 5 , respectively. The genesis of solid-state amorphization in Al 65 Cu 20 Zr 15 and Al 65 Cu 10 Zr 25 is investigated

  4. Aluminum alloy excellent in neutron absorbing performance

    International Nuclear Information System (INIS)

    Iida, Tetsuya; Tamamura, Tadao; Morimoto, Hiroyuki; Ouchi, Ken-ichiro.

    1987-01-01

    Purpose: To obtain structural materials made of aluminum alloys having favorable neutron absorbing performance and excellent in the performance as structural materials such as processability and strength. Constitution: Powder of Gd 2 O 3 as a gadolinium compound or metal gadolinium is uniformly mixed with the powder of aluminum or aluminum alloy. The amount of the gadolinium compound added is set to 0.1 - 30 % by weight. No sufficient neutron absorbing performance can be obtained if it is less than 0.1 % by weight, whereas the processability and mechanical property of the alloy are degraded if it exceeds 30 % by weight. Further, the grain size is set to less about 50 μm. Further, since the neutron absorbing performance varies greatly if the aluminum powder size exceeds 100 μm, the diameter is set to less than about 100 μm. These mixtures are molded in a hot press. This enables to obtain aimed structural materials. (Takahashi, M.)

  5. Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering

    International Nuclear Information System (INIS)

    Liu Weishu; Zhang Boping; Li Jingfeng; Zhao Lidong

    2007-01-01

    Skutterudite CoSb 3 polycrystalline materials were prepared using a combined process of mechanical alloying (MA) and spark plasma sintering (SPS). The influence of SPS temperature on the thermoelectric properties was focused in this work with a special emphasis on the analysis of the size effects of grains. The average grain sizes decreased from 300 to 50 nm with decreasing SPS temperatures from 600 to 300 deg. C. The electrical resistivities of samples spark plasma sintered at 300-600 deg. C all decreased with increasing temperature, indicating a classic intrinsic conduction behaviour of semiconductors. The samples spark plasma sintered at 300-500 deg. C showed a positive Seebeck coefficient while the sample spark plasma sintered at 600 deg. C showed a negative Seebeck coefficient. The room-temperature thermal conductivities were reduced from 4.30 to 2.92 W m -1 K -1 as the grain sizes were decreased from 300 to 100 nm corresponding to SPS at 600 and 400 deg. C, respectively. The present work indicates that MA and SPS is a good combination for fabricating fine-grained CoSb 3 thermoelectric materials

  6. Ni3Al intermetallide-based alloy: a promising material for turbine blades

    International Nuclear Information System (INIS)

    Kablov, E.N.; Lomberg, B.S.; Buntushkin, V.P.; Golubovskij, E.R.; Muboyadzhyan, S.A.

    2002-01-01

    A consideration is given to properties and structure of a cast intermetallic alloy grade VKNA-4U-mono- with monocrystalline structure in the temperature range of 20-1250 deg C. The influence of long-term heating at 1200 deg C on the stability of alloy mechanical properties is investigated. The advantages of a cast alloy on the basis of alloyed intermetallic compound Ni 3 Al are demonstrated, the processing and physical properties of the alloy are presented [ru

  7. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  8. Experimental study of disorder in a semiconductor microcavity

    Science.gov (United States)

    Gurioli, M.; Bogani, F.; Wiersma, D. S.; Roussignol, Ph.; Cassabois, G.; Khitrova, G.; Gibbs, H.

    2001-10-01

    A detailed study of the structural disorder in wedge semiconductor microcavities (MC's) is presented. We demonstrate that images of the coherent emission from the MC surface can be used for a careful characterization of both intrinsic and extrinsic optical properties of semiconductor MC's. The polariton broadening can be measured directly, avoiding the well-known problem of inhomogeneous broadening due to the MC wedge. A statistical analysis of the spatial line shape of the images of the MC surface shows the presence of static disorder associated with dielectric fluctuations in the Bragg reflector. Moreover, the presence of local fluctuations of the effective cavity length can be detected with subnanometer resolution. The analysis of the resonant Rayleigh scattering (RRS) gives additional information on the origin of the disorder. We find that the RRS is dominated by the scattering of the photonic component of the MC polariton by disorder in the Bragg reflector. Also the RRS is strongly enhanced along the [110] and [11¯0] directions. This peculiar scattering pattern is attributed to misfit dislocations induced by the large thickness of the mismatched AlGaAs alloy in the Bragg mirrors.

  9. Formation of Al70Cu20Fe10 icosahedral quasicrystal by mechanically alloyed method

    International Nuclear Information System (INIS)

    Yin Shilong; Bian Qing; Qian Liying; Zhang Aimei

    2007-01-01

    The structural evolutions of the mechanically alloyed ternary Al 70 Cu 20 Fe 10 powders with the milling time and the annealing treatment have been studied by X-ray diffraction (XRD), transmission electronic microscopy (TEM) and X-ray absorption fine-structure spectroscopy (XAFS) techniques. Results show that an Al 2 Cu compound forms with short-time milling, while a Cu 9 Al 4 compound forms with long-time milling. Fe can react with Al-Cu alloy by annealing treatment. Al 7 Cu 2 Fe compound with tetragonal structure or Al (Cu, Fe) solid solution with cubic structure may form at lower temperature, while a quasicrystal phase of Al 65 Cu 20 Fe 15 alloy may form at higher temperature

  10. Magnetocaloric effect in “reduced” dimensions: Thin films, ribbons, and microwires of Heusler alloys and related compounds: Magnetocaloric effect in “reduced” dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Khovaylo, Vladimir V. [National University of Science and Technology MISiS, Moscow 119049 Russia; ITMO University, St. Petersburg 197101 Russia; Rodionova, Valeria V. [National University of Science and Technology MISiS, Moscow 119049 Russia; Innovation Park and Institute of Physics & Technology, Immanuel Kant Baltic Federal University, Kaliningrad 236041 Russia; Shevyrtalov, Sergey N. [Innovation Park and Institute of Physics & Technology, Immanuel Kant Baltic Federal University, Kaliningrad 236041 Russia; Novosad, Val [Materials Science Division, Argonne National Laboratory, Argonne IL 60439 USA

    2014-08-19

    Room temperature magnetic refrigeration is an energy saving and environmentally-friendly technology which has developed rapidly from a basic idea to prototype devices. The performance of magnetic refrigerators crucially depends on the magnetocaloric properties and the geometry of the employed refrigerants. Here we review the magnetocaloric properties of Heusler alloys and related compounds with a high surface to volume ratio such as films, ribbons and microwires, and compare them with their bulk counterparts.

  11. Electronic states density and solution volume of hydrogen solution in SiC alloys

    International Nuclear Information System (INIS)

    Gervasoni, J.L.; Furnari, J.C.

    2012-01-01

    The new reactor concepts are characterized by higher efficiency, better utilization of nuclear fuel and nuclear waste minimization. This approach means that this will be to enter a new and deep structural analysis of materials with a tensile strength significantly higher than those currently used radiation. To achieve high performance parameters, continuous research and testing of new materials will be needed. In this paper we concentrate on the analysis of SiC alloys, because due to their unique properties, this alloy can be used in high temperature conditions, where the silicon, semiconductor material of choice does not work (author)

  12. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  13. Identification of a potential superhard compound ReCN

    International Nuclear Information System (INIS)

    Fan, Xiaofeng; Li, M.M.; Singh, David J.; Jiang, Qing; Zheng, W.T.

    2015-01-01

    Highlights: • We identify a new ternary compound ReCN with theoretical calculation. • The ternary compound ReCN is with two stable structures with P63mc and P3m1. • ReCN is a semiconductor from the calculation of electronic structures. • ReCN is found to possess the outstanding mechanical properties. • ReCN may be synthesized relatively easily. - Abstract: We identify a new ternary compound, ReCN and characterize its properties including structural stability and indicators of hardness using first principles calculations. We find that there are two stable structures with space groups P63mc (HI) and P3m1 (HII), in which there are no C–C and N–N bonds. Both structures, H1 and III are elastically and dynamically stable. The electronic structures show that ReCN is a semiconductor, although the parent compounds, ReC 2 and ReN 2 are both metallic. ReCN is found to possess the outstanding mechanical properties with the large bulk modulus, shear modulus and excellent ideal strengths. In addition, ReCN may perhaps be synthesized relatively easily because it becomes thermodynamic stable with respect to decomposition at very low pressures

  14. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  15. Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

    International Nuclear Information System (INIS)

    Blumers, Mathias

    2012-01-01

    The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

  16. Photo-Electrochemical Effect of Zinc Addition on the Electrochemical Corrosion Potentials of Stainless Steels and Nickel Alloys in High Temperature Water

    International Nuclear Information System (INIS)

    Lee, Yi-Ching; Fong, Clinton; Fang-Chu, Charles; Chang, Ching

    2012-09-01

    Hydrogen water chemistry (HWC) is one of the main mitigating methods for stress corrosion cracking problem of reactor core stainless steel and nickel based alloy components. Zinc is added to minimize the radiation increase associated with HWC. However, the subsequently formed zinc-containing surface oxides may exhibit p-type semiconducting characteristics. Upon the irradiation of Cherenkov and Gamma ray in the reactor core, the ECP of stainless steels and nickel based alloys may shift in the anodic direction, possibly offsetting the beneficial effect of HWC. This study will evaluate the photo-electrochemical effect of Zinc Water Chemistry on SS304 stainless steel and Alloy 182 nickel based weld metal under simulated irradiated BWR water environments with UV illumination. The experimental results reveal that Alloy 182 nickel-based alloy generally possesses n-type semiconductor characteristics in both oxidizing NWC and reducing HWC conditions with zinc addition. Upon UV irradiation, the ECP of Alloy 182 will shift in the cathodic direction. In most conditions, SS304 will also exhibit n-type semiconducting properties. Only under hydrogen water chemistry, a weak p-type property may emerge. Only a slight upward shift in the anodic direction is detected when SS304 is illuminated with UV light. The potential influence of p-type semiconductor of zinc containing surface oxides is weak and the mitigation effect of HWC on the stress corrosion cracking is not adversely affected. (authors)

  17. Design and fabrication of a mechanical alloying system for preparing intermetallic, nanocrystalline, amorphous and quasicrystalline compounds; Diseno y fabricacion de un sistema de aleado mecanico para preparar compuestos intermetalicos, nanocristalinos, amorfos y cuasicristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Bonifacio M, J.; Iturbe G, J.L.; Castaneda J, G. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    2002-07-01

    In this work a grinding system was designed and fabricated which allowed to improve the operation conditions in time, frequency, temperature and selection of the grinding media and that allow the contamination decrease of the compounds. By means of this method of mechanical alloying new metallic compounds can be produced, starting from elemental powders, with fine and controlled microstructures. These compounds prepared by this method are going to be used as materials for the hydrogen storage. (Author)

  18. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  19. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  20. LASER CLADDING ON ALUMINIUM BASE ALLOYS

    OpenAIRE

    Pilloz , M.; Pelletier , J.; Vannes , A.; Bignonnet , A.

    1991-01-01

    laser cladding is often performed on iron or titanium base alloys. In the present work, this method is employed on aluminum alloys ; nickel or silicon are added by powder injection. Addition of silicon leads to sound surface layers, but with moderated properties, while the presence of nickel induces the formation of hard intermetallic compounds and then to an attractive hardening phenomena ; however a recovery treatment has to be carried out, in order to eliminate porosity in the near surface...

  1. Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

    OpenAIRE

    Weimer, M.; Kramar, J.; Bai, C.; Baldeschwieler, J. D.

    1988-01-01

    Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

  2. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  3. The crystal structure and electronic properties of a new metastable non-stoichiometric BaAl{sub 4}-type compound crystallized from amorphous La{sub 6}Ni{sub 34}Ge{sub 60} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, Masashi [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Suzuki, Shoichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Ohsuna, Tetsu [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Matsubara, Eiichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Endo, Satoshi [Center for Low Temperature Science, Tohoku University, Sendai, Katahira 980-8577 (Japan); Inoue, Akihisa [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan)

    2004-11-17

    A new metastable La-Ge-Ni ternary BaAl{sub 4}-type (ThCr{sub 2}Si{sub 2}-type) compound, of which the space group is I4/mmm is synthesized. It is obtained by a polymorphic transformation from an La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy on crystallizing. The formula of the compound is (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2}. This indicates that it is highly non-stoichiometric compared to the stoichiometric LaNi{sub 2}Ge{sub 2}. It is found that the c-axis lattice parameter of this compound is much longer than that of LaNi{sub 2}Ge{sub 2}. It should be noted that the longer c-axis unit cell parameter is attributable only to the longer interlayer distance between Ge site and Ni site layers. The temperature dependences of electrical resistivity and thermoelectric power of the (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2} compound and La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy are also clarified. The comparison of these electronic properties between the two materials indicates that sp-electrons mainly contribute to the density of states around the Fermi level of this compound.

  4. Semiconductor quantum dots: synthesis and water-solubilization for biomedical applications.

    Science.gov (United States)

    Yu, William W

    2008-10-01

    Quantum dots (QDs) are generally nanosized inorganic particles. They have distinctive size-dependent optical properties due to their very small size (mostly semiconductor QDs (mainly metal-chalcogenide compounds) and forming biocompatible structures for biomedical applications are discussed in this paper. This information may facilitate the research to create new materials/technologies for future clinical applications.

  5. Thermodynamic analysis of (Ni, Fe)3Al formation by mechanical alloying

    International Nuclear Information System (INIS)

    Adabavazeh, Z.; Karimzadeh, F.; Enayati, M.H.

    2012-01-01

    Highlights: ► (Ni, Fe) 3 Al intermetallic compound was synthesized by mechanical alloying. ► We use a thermodynamic analysis to predict the more stable phase. ► We calculate the Gibbs free-energy changes by using extended Miedema model. ► The results of MA compared with thermodynamic analysis and showed a good agreement with it. - Abstract: (Ni, Fe) 3 Al intermetallic compound was synthesized by mechanical alloying (MA) of Ni, Fe and Al elemental powder mixtures of composition Ni 50 Fe 25 Al 25 . Phase transformation and microstructure characteristics of the alloy powders were investigated by X-ray diffraction (XRD). The results show that mechanical alloying resulted in a Ni (Al, Fe) solid solution. By continued milling, this structure transformed to the disordered (Ni, Fe) 3 Al intermetallic compound. A thermodynamic model developed on the basis of extended theory of Miedema is used to calculate the Gibbs free-energy changes. Final product of MA is a phase having minimal Gibbs free energy compared with other competing phases in Ni–Fe–Al system. However in Ni–Fe–Al system, the most stable phase at all compositions is intermetallic compound (not amorphous phase or solid solution). The results of MA were compared with thermodynamic analysis and revealed the leading role of thermodynamic on the formation of MA product prediction.

  6. Band structure of the quaternary Heusler alloys ScMnFeSn and ScFeCoAl

    Science.gov (United States)

    Shanthi, N.; Teja, Y. N.; Shaji, Shephine M.; Hosamani, Shashikala; Divya, H. S.

    2018-04-01

    In our quest for materials with specific applications, a theoretical study plays an important role in predicting the properties of compounds. Heusler alloys or compounds are the most studied in this context. More recently, a lot of quaternary Heusler compounds are investigated for potential applications in fields like Spintronics. We report here our preliminary study of the alloys ScMnFeSn and ScFeCoAl, using the ab-initio linear muffin-tin orbital method within the atomic sphere approximation (LMTO-ASA). The alloy ScMnFeSn shows perfect half-metallicity, namely, one of the spins shows a metallic behaviour and the other spin shows semi-conducting behaviour. Such materials find application in devices such as the spin-transfer torque random access memory (STT-MRAM). In addition, the alloy ScMnFeSn is found to have an integral magnetic moment of 4 µB, as predicted by the Slater-Pauling rule. The alloy ScFeCoAl does not show half-metallicity.

  7. Binding Energy, Vapor Pressure and Melting Point of Semiconductor Nanoparticles

    International Nuclear Information System (INIS)

    H. H. Farrell; C. D. Van Siclen

    2007-01-01

    Current models for the cohesive energy of nanoparticles generally predict a linear dependence on the inverse particle diameter for spherical clusters, or, equivalently, on the inverse of the cube root of the number of atoms in the cluster. Although this is generally true for metals, we find that for the group IV semiconductors, C, Si and Ge, this linear dependence does not hold. Instead, using first principles, density functional theory calculations to calculate the binding energy of these materials, we find a quadratic dependence on the inverse of the particle size. Similar results have also been obtained for the metallic group IV elements Sn and Pb. This is in direct contradiction to current assumptions. Further, as a consequence of this quadratic behavior, the vapor pressure of semiconductor nanoparticles rises more slowly with decreasing size than would be expected. In addition, the melting point of these nanoparticles will experience less suppression than experienced by metal nanoparticles with comparable bulk binding energies. This non-linearity also affects sintering or Ostwald ripening behavior of these nanoparticles as well as other physical properties that depend on the nanoparticle binding energy. The reason for this variation in size dependence involves the covalent nature of the bonding in semiconductors, and even in the 'poor' metals. Therefore, it is expected that this result will hold for compound semiconductors as well as the elemental semiconductors

  8. PERSPECTIVES OF NANOPOWDERS APPLICATION FOR MANUFACTURING OF MODIFYING ALLOYING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    A. Kalinichenko

    2015-01-01

    Full Text Available Application of nanomaterials for grain refining of metals and its allac is of great interest as it aimis achieveto higher physicalmechanical properties in finished parts. Analysis shows that to gain high effectiveness of nanoparticles it is important to provide proper input of these particles into alloying alloy. The aim of present research is study of initial nanoparticles structure on the base of titanium, boron, yttrium and carbon nanotubes as well as development of method to manufacture alloying alloys containing nanoparticles.Investigations of nanopowders phase compositions on the base of titanium, boron and yttrium have shown that active elements such as boron carbide, titanium carbide and nitride, yttrium oxide are base compounds of these nanopowders. Powder particles are formed by primary structural elements having mainly plate state (titanium and boron carbides and containing equiaxial inclusions with sizes of 5–200 nm. Chemical composition of specimens synthesized is uniform and contains 98.0 – 99.5% of main compound.Results of metal-protector and nanoparticles mixing have revealed that the increase of mixing duration from 2 to 6 hours assist to more uniform elements distribution through the pellet volume. Applying extrusion method specimens of alloying alloys have been produced and elements distribution in cross-section and longitudinal directions were determined.Analysis of research implemented has shown that distribution of active nanopowders in matrix is more uniform in extruded alloying alloys specimens compared to ones produced by methods of sintering or pressing of powder mixtures.

  9. A new approach to grain refinement of an Mg-Li-Al cast alloy

    International Nuclear Information System (INIS)

    Jiang, B.; Qiu, D.; Zhang, M.-X.; Ding, P.D.; Gao, L.

    2010-01-01

    Crystallographic calculation based on the edge-to-edge matching model predicted that both TiB 2 and Al 3 Ti intermetallic compounds have strong potential to be effective grain refiners for β phase in the Mg-14Li-1Al alloy due to the small atomic matching misfit across the interface between the compounds and β phase. Experimental results showed that addition of 1.25 wt%Al-5Ti-1B master alloy reduced grain size of β phase in the alloy from 1750 to 500 μm. The possible grain refining mechanisms were also discussed.

  10. Mechanical properties and grindability of experimental Ti-Au alloys.

    Science.gov (United States)

    Takahashi, Masatoshi; Kikuchi, Masafumi; Okuno, Osamu

    2004-06-01

    Experimental Ti-Au alloys (5, 10, 20 and 40 mass% Au) were made. Mechanical properties and grindability of the castings of the Ti-Au alloys were examined. As the concentration of gold increased to 20%, the yield strength and the tensile strength of the Ti-Au alloys became higher without markedly deteriorating their ductility. This higher strength can be explained by the solid-solution strengthening of the a titanium. The Ti-40%Au alloy became brittle because the intermetallic compound Ti3Au precipitated intensively near the grain boundaries. There was no significant difference in the grinding rate and grinding ratio among all the Ti-Au alloys and the pure titanium at any speed.

  11. Microstructure of two phases alloy Al3Ti/Al3Ti0.75Fe0.25

    International Nuclear Information System (INIS)

    Angeles, C.; Rosas, G.; Perez, R.

    1998-01-01

    The titanium-aluminium system presents three intermetallic compounds from those Al 3 Ti is what less attention has received. The objective of this work is to generate and characterize the microstructure of multiphase alloys nearby to Al 3 Ti compound through Fe addition as alloying. This is because it has been seen that little precipitates of Al 2 Ti phase over Al 3 Ti intermetallic compound increases its ductility. (Author)

  12. Phase transitions in alloys of the Ni-Mo system

    International Nuclear Information System (INIS)

    Ustinovshikov, Y.; Shabanova, I.

    2011-01-01

    Graphical abstract: The structure of Ni-20 at.% Mo and Ni-25 at.% Mo alloys was studied by methods of TEM and XPS. It is shown that at high temperatures the tendency toward phase separation takes place in the alloys and crystalline bcc Mo particles precipitate in the liquid solution. At 900 deg. C and below, the tendency toward ordering leads to the dissolution of Mo particles and precipitation of the particles of Ni 3 Mo, Ni 2 Mo or Ni 4 Mo chemical compounds. Highlights: → 'Chemical' phase transition 'ordering-phase separation' is first discovered in alloys of the Ni-Mo system. → It is first shown that the phase separation in the alloys studied begins at temperatures above the liquidus one. → The formation of Ni 3 Mo from A1 has gone through the intervening stage of the Ni 4 Mo and Ni 2 Mo coexistence. - Abstract: The structure of Ni-20 at.% Mo and Ni-25 at.% Mo alloys heat treated at different temperatures was studied by the method of transmission electron microscopy. X-ray photoelectron spectroscopy was used to detect the sign of the chemical interaction between Ni and Mo atoms at different temperatures. It is shown that at high temperatures the tendency toward phase separation takes place. The system of additional reflections at positions {1 1/2 0} on the electron diffraction patterns testifies that the precipitation of crystalline bcc Mo particles begins in the liquid solution. At 900 deg. C and below, the tendency toward ordering leads to the precipitation of the particles of the chemical compounds. A body-centered tetragonal phase Ni 4 Mo (D1 a ) is formed in the Ni-20 at.% Mo alloy. In the Ni-25 at.% Mo alloy, the formation of the Ni 3 Mo (D0 22 ) chemical compound from the A1 solid solution has gone through the intervening stage of the Ni 4 Mo (D1 a ) and Ni 2 Mo (Pt 2 Mo) formation.

  13. Technetium compounds and their field of application

    International Nuclear Information System (INIS)

    Zaitseva, L.L.; Velichko, A.V.; Vinogradov, I.V.

    1988-02-01

    This chapter reviews the different applications of technetium and technetium compounds in catalysis, corrosion inhibition, superconductivity of technetium alloys, diagnostic techniques, radioisotope generators and radiopharmaceuticals. 649 refs [fr

  14. Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

    KAUST Repository

    Hussain, Aftab M.

    2014-12-14

    We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well as experimentally by fabricating MOSFETs. Our study suggests that the alloy offers interesting possibilities in the realm of silicon band gap tuning. We have explored diffusion of tin (Sn) into the industry\\'s most widely used substrate, silicon (100), as it is the most cost effective, scalable and CMOS compatible way of obtaining SiSn. Our theoretical model predicts a higher mobility for p-channel SiSn MOSFETs, due to a lower effective mass of the holes, which has been experimentally validated using the fabricated MOSFETs. We report an increase of 13.6% in the average field effect hole mobility for SiSn devices compared to silicon control devices.

  15. Theoretical investigation of the structural stabilities, optoelectronic properties and thermodynamic characteristics of GaPxSb1-x ternary alloys

    Science.gov (United States)

    Oumelaz, F.; Nemiri, O.; Boumaza, A.; Ghemid, S.; Meradji, H.; Bin Omran, S.; El Haj Hassan, F.; Rai, D. P.; Khenata, R.

    2018-06-01

    In this theoretical study, we have investigated the structural, phase transition, electronic, thermodynamic and optical properties of GaPxSb1-x ternary alloys. Our calculations are performed with the WIEN2k code based on density functional theory using the full-potential linearized augmented plane wave method. For the electron exchange-correlation potential, a generalized gradient approximation within Wu-Cohen scheme is considered. The recently developed Tran-Blaha modified Becke-Johnson potential has also been used to improve the underestimated band gap. The structural properties, including the lattice constants, the bulk moduli and their pressure derivatives are in very good agreement with the available experimental data and theoretical results. Several structural phase transitions were studied here to establish the stable structure and to predict the phase transition under hydrostatic pressure. The computed transition pressure (Pt) of the material of our interest from the zinc blende (B3) to the rock salt (B1) phase has been determined and found to agree well with the experimental and theoretical data. The calculated band structure shows that GaSb binary compound and the ternary alloys are direct band gap semiconductors. Optical parameters such as the dielectric constants and the refractive indices are calculated and analyzed. The thermodynamic results are also interpreted and analyzed.

  16. Thermal oxidation of III-V compounds

    International Nuclear Information System (INIS)

    Monteiro, O.R.; Evans, J.W.

    1988-01-01

    The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

  17. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  18. Analysis of sulphur, phosphorus and silica in metals, alloys, inorganic compounds and solvents

    International Nuclear Information System (INIS)

    Upadhya, J.C.; Naik, S.S.; Khedikar, W.K.; Sudersanan, M.; Mathur, P.K

    1999-10-01

    Procedures for the analysis of sulphur, phosphorus and silica in various metals and alloys like mild steel, carbon steel and stainless steel as well as nickel base alloys are described. Procedures were also developed for the analysis of sulphur in thoria pellets and in other materials like crack check fluids, coal etc. Typical results obtained are summarised. (author)

  19. Theory of ferromagnetic (III,Mn)V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Mašek, Jan; Kučera, Jan; MacDonald, A. H.

    2006-01-01

    Roč. 78, - (2006), s. 809-859 ISSN 0034-6861 R&D Projects: GA MŠk LC510; GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; U.S. Department of Energy(US) DE-FG03-02ER45958; U.S. Office of Naval research(US) OMR-N000140610122 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * (III,Mn)V compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.508, year: 2006

  20. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  1. Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

    Science.gov (United States)

    Blomfield, Christopher James

    Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

  2. Study of the high temperature characteristics of hydrogen storage alloys

    CERN Document Server

    Rong, Li; Shaoxiong, Zhou; Yan, Qi; 10.1016/j.jallcom.2004.07.006

    2005-01-01

    In this work, the phase structure of as-cast and melt-spun (MmY)/sub 1/(NiCoMnAl)/sub 5/ alloys (the content of yttrium is 0-2.5wt.%) and their electrochemical properties were studied with regard to discharge capacity at different temperatures (30-80 degrees C) and cycling life at 30 degrees C. It is found that the substitution of yttrium increase the electrochemical capacity of the compounds and decrease the difference in capacity between as-cast and as-quenched compounds at 30 degrees C. When increasing the yttrium concentration from 0 to 2.5wt.%, the cycling life of both the as-cast and the melt- spun compounds deteriorated, although the latter have a slightly longer cycle life than the former. The remarkable feature of the alloys obtained by yttrium substitution is the improvement of the high temperature electrochemical properties. It shows that the stability of the hydrides is increased. Compared with the as-cast alloys, the melt-spun ribbons have higher electrochemical charge /discharge capacity in the ...

  3. Investigation of alloying effects in aluminum dispersion strengthened with Al2O3

    International Nuclear Information System (INIS)

    Copeland, G.L.

    1975-10-01

    Two types of alloying elements were investigated to determine if the room-temperature strength could be improved and if, through lowering the oxide content, the high-temperature ductility could be improved. Mg was investigated for its solid solution strengthening in one type alloy. The other type alloy involved further dispersion strengthening through adding Fe, Mo, Zr, Cr, V, and Ti which form highly stable intermetallic compounds with Al. Fabrication techniques were developed which produced uniform and reproducible rods for testing. Prealloyed powders were produced by atomizing the molten alloys and collecting the powders in water. This procedure produced uniform powders with a very fine distribution of the intermetallic compounds. Fabrication into rods then included ball-milling, vacuum hot pressing, vacuum heat treating, and hot extrusion. Mg additions improved strengths up to 200 0 C with little effect above that temperature. Room-temperature tensile strengths up to 77,000 psi were obtained which are comparable to the strengths obtained in conventional aluminum alloys. The additional dispersion strengthening of the intermetallic compounds is additive to that of the oxide from room temperature to 450 0 C. No significant improvements in ductility are obtained by reducing the oxide content since even at very low ball-milling times (i.e., low oxide contents) the uniform elongation at 450 0 C is typically 0.5 percent. Good combinations of strength and ductility at 450 0 C were obtained in some of the alloys containing intermetallic compounds with no ball-milling. Typical properties at this temperature were tensile strengths of 7,000 psi, uniform elongation of 3 percent, and total elongation of 35 percent. (21 tables, 33 fig, 43 references) (auth)

  4. Synthesis and microstructure characterization of Ni-Cr-Co-Ti-V-Al high entropy alloy coating on Ti-6Al-4V substrate by laser surface alloying

    International Nuclear Information System (INIS)

    Cai, Zhaobing; Jin, Guo; Cui, Xiufang; Liu, Zhe; Zheng, Wei; Li, Yang; Wang, Liquan

    2016-01-01

    Ni-Cr-Co-Ti-V-Al high-entropy alloy coating on Ti-6Al-4V was synthesized by laser surface alloying. The coating is composed of a B2 matrix and (Co, Ni)Ti 2 compounds with few β-Ti phases. Focused ion beam technique was utilized to prepare TEM sample and TEM observations agree well with XRD and SEM results. The formation of HEA phases is due to high temperature and rapid cooling rate during laser surface alloying. The thermodynamic parameters, ΔH mix , ΔS mix and δ as well as Δχ, should be used to predict the formation of the BCC solid solution, but they are not the strict criteria. Especially when Δχ reaches a high value (≥ 10%), BCC HEA will be partially decomposed, leading to the formation of (Co, Ni)Ti 2 compound phases. - Highlights: •Preparing HEA coating on Ti-6Al-4V by laser surface alloying is successful. •The synthesized HEA coating mainly consists of BCC HEA and (Co, Ni)Ti 2 compounds. •FIB technology was used to prepare the sample for TEM analysis. • ΔH mix , ΔS mix and δ as well as Δχ, should be all used to predict the formation of solid solution.

  5. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  6. Fe based amorphous and compounds metallic alloys for magnetic and structural use

    International Nuclear Information System (INIS)

    Lavorato, G; Bassi, F; De Rosa, H; Moya, J

    2008-01-01

    Massive amorphous metals (thicker than 1mm) are new types of material that could have a wide range of future applications due to a unique combination of their physical properties, mechanics and magnetics. Among these are the elevated tension of fracture and hardness, and excellent soft magnetic properties. Since 1960, when an amorphous metallic alloy was first discovered, progress has continued on the application possibilities for these materials. One of their main limitations, maximum obtainable thickness, has continued to increase, since at first thicknesses of a few microns were obtained. Now amorphous alloys more than 70 mm thick are obtained using different metallic elements. Since 1995 massive amorphous metals can be produced using Fe as the base element. At first they were made in order to achieve good soft magnetic properties (thicknesses of ∼5 mm) and later a renewed interest in their use as structural material led to the development of materials with thicknesses of 16 mm and paramagnetics at room temperature. Increasing the toughness of these materials is also a challenge and investigators have proposed several solutions, among them is the development of composite materials where dendrites from a solid solution act as crack stoppers of fissures that are spread by an amorphous matrix. This work presents the results of studies with two types of synthesized materials using the rapid cooling technique from injection copper mold casting at air temperature: 1) a massive amorphous metallic alloy with composition (Fe 0.375 Co 0 .375 B 0.2 Si 0.05 )96Nb 4 (at.%) and 2) a composite of solid solution dendrites α-(FeCo) scattered in an amorphous matrix with a composition similar to alloy 1. Using the samples obtained structural studies were made (optic and electronic microscopy SEM, XRD, EDAX, DTA), magnetic studies (coercive field and saturation magnetization) and mechanical studies (Vickers microhardness). The fully amorphous alloy could be obtained with a

  7. Alloy formation during chromium electrodeposition at niobium cathode in molten salts

    International Nuclear Information System (INIS)

    Kuznetsov, S.A.; Glagolevskaya, A.L.

    1993-01-01

    Alloy formation during electrodeposition of chromium at niobium cathode is studied in salt melts. It is shown that during chromium electrodeposition at niobium support intermetallic compound Cr 2 Nb is formed. Thermodynamic characteristics of Cr 0.66 Nb 0.33 alloy are determined. 10 refs., 1 fig

  8. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

    2002-01-01

    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  9. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

    Science.gov (United States)

    Lany, Stephan

    2016-06-07

    Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

  10. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  11. Group III nitride semiconductors for short wavelength light-emitting devices

    Science.gov (United States)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  12. Voltammetric determination of zirconium using azo compounds

    International Nuclear Information System (INIS)

    Orshulyak, O.O.; Levitskaya, G.D.

    2008-01-01

    The optimum conditions for zirconium complexation with azo compounds are found. The applicability of Eriochrome Red B, Calcon, and Calcion to the voltammetric determination of zirconium, total Zr(IV) and Hf(IV), and Zr(IV) in the presence of Zn(II), Cu(II), Cd(II), Ni(II), or Ti(IV) is demonstrated. The developed procedures are used to determine zirconium in a terbium alloy and in an alloy for airplane wheel drums [ru

  13. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

    Science.gov (United States)

    Sasaki, Hirokazu; Otomo, Shinya; Minato, Ryuichiro; Yamamoto, Kazuo; Hirayama, Tsukasa

    2014-06-01

    Phase-shifting electron holography and Lorentz microscopy were used to map dopant distributions in GaAs compound semiconductors with step-like dopant concentration. Transmission electron microscope specimens were prepared using a triple beam focused ion beam (FIB) system, which combines a Ga ion beam, a scanning electron microscope, and an Ar ion beam to remove the FIB damaged layers. The p-n junctions were clearly observed in both under-focused and over-focused Lorentz microscopy images. A phase image was obtained by using a phase-shifting reconstruction method to simultaneously achieve high sensitivity and high spatial resolution. Differences in dopant concentrations between 1 × 10(19) cm(-3) and 1 × 10(18) cm(-3) regions were clearly observed by using phase-shifting electron holography. We also interpreted phase profiles quantitatively by considering inactive layers induced by ion implantation during the FIB process. The thickness of an inactive layer at different dopant concentration area can be measured from the phase image. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  14. Structural properties of III-V zinc-blende semiconductors under pressure

    International Nuclear Information System (INIS)

    Froyen, S.; Cohen, M.L.

    1983-01-01

    The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

  15. Observations of a Cast Cu-Cr-Zr Alloy

    Science.gov (United States)

    Ellis, David L.

    2006-01-01

    Prior work has demonstrated that Cu-Cr-Nb alloys have considerable advantages over the copper alloys currently used in regeneratively cooled rocket engine liners. Observations indicated that Zr and Nb have similar chemical properties and form very similar compounds. Glazov and Zakharov et al. reported the presence of Cr2Zr in Cu-Cr-Zr alloys with up to 3.5 wt% Cr and Zr though Zeng et al. calculated that Cr2Zr could not exist in a ternary Cu-Cr-Zr alloy. A cast Cu-6.15 wt% Cr-5.25 wt% Zr alloy was examined to determine if the microstructure developed would be similar to GRCop-84 (Cu-6.65 wt% Cr-5.85 wt% Nb). It was observed that the Cu-Cr-Zr system did not form any Cr2Zr even after a thermal exposure at 875 C for 176.5 h. Instead the alloy consisted of three phases: Cu, Cu5Zr, and Cr.

  16. Oxygen stabilized rare-earth iron intermetallic compounds

    International Nuclear Information System (INIS)

    Dariel, M.P.; Malekzadeh, M.; Pickus, M.R.

    1975-10-01

    A new, oxygen-stabilized intermetallic compound was identified in sintered, pre-alloyed rare-earth iron powder samples. Its composition corresponds to formula R 12 Fe 32 O 2 and its crystal structure belongs to space group Im3m. The presence of these compounds was observed, so far, in several R--Fe--O systems, with R = Gd, Tb, Dy, Ho, Er, and Y

  17. Positron-annihilation 2D-ACAR studies of disordered and defected alloys

    International Nuclear Information System (INIS)

    Bansil, A.; Prasad, R.; Smedskjaer, L.C.; Benedek, R.; Mijnarends, P.E.

    1987-09-01

    Theoretical and experimental progess in connection with 2D-ACAR positron annihilation studies of ordered, disordered, and defected alloys is discussed. We present, in particular, some of the recent developments concerning the electronic structure of disordered alloys, and the work in the area of annihilation from positrons trapped at vacancy-type defects in metals and alloys. The electronic structure and properties of a number of compounds are also discussed briefly; we comment specifically on high T/sub c/ ceramic superconductors, Heusler alloys, and transition-metal aluminides. 58 refs., 116 figs

  18. Microstructure of III-N semiconductors related to their applications in optoelectronics

    Science.gov (United States)

    Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

    2005-03-01

    There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

  19. Microstructures of tribologically modified surface layers in two-phase alloys

    International Nuclear Information System (INIS)

    Figueroa, C G; Ortega, I; Jacobo, V H; Ortiz, A; Bravo, A E; Schouwenaars, R

    2014-01-01

    When ductile alloys are subject to sliding wear, small increments of plastic strain accumulate into severe plastic deformation and mechanical alloying of the surface layer. The authors constructed a simple coaxial tribometer, which was used to study this phenomenon in wrought Al-Sn and cast Cu-Mg-Sn alloys. The first class of materials is ductile and consists of two immiscible phases. Tribological modification is observed in the form of a transition zone from virgin material to severely deformed grains. At the surface, mechanical mixing of both phases competes with diffusional unmixing. Vortex flow patterns are typically observed. The experimental Cu-Mg-Sn alloys are ductile for Mg-contents up to 2 wt% and consist of a- dendrites with a eutectic consisting of a brittle Cu 2 Mg-matrix with α-particles. In these, the observations are similar to the Al-Sn Alloys. Alloys with 5 wt% Mg are brittle due to the contiguity of the eutectic compound. Nonetheless, under sliding contact, this compound behaves in a ductile manner, showing mechanical mixing of a and Cu 2 Mg in the top layers and a remarkable transition from a eutectic to cellular microstructure just below, due to severe shear deformation. AFM-observations allow identifying the mechanically homogenized surface layers as a nanocrystalline material with a cell structure associated to the sliding direction

  20. Hydrogen interactions in aluminum-lithium alloys

    Science.gov (United States)

    Smith, S. W.; Scully, J. R.

    1991-01-01

    A program is described which seeks to develop an understanding of the effects of dissolved and trapped hydrogen on the mechanical properties of selected Al-Li-Cu-X alloys. A proposal is made to distinguish hydrogen (H2) induced EAC from aqueous dissolution controlled EAC, to correlate H2 induced EAC with mobile and trapped concentrations, and to identify significant trap sites and hydride phases (if any) through use of model alloys and phases. A literature review shows three experimental factors which have impeded progress in the area of H2 EAC for this class of alloys. These are as listed: (1) inter-subgranular fracture in Al-Li alloys when tested in the S-T orientation in air or vacuum make it difficult to readily detect H2 induced fracture based on straight forward changes in fractography; (2) the inherently low H2 diffusivity and solubility in Al alloys is further compounded by a native oxide which acts as a H2 permeation barrier; and (3) H2 effects are masked by dissolution assisted processes when mechanical testing is performed in aqueous solutions.

  1. Pitting Corrosion of Ni3(Si,Ti Intermetallic Compound at Various Chloride Concentrations

    Directory of Open Access Journals (Sweden)

    Gadang Priyotomo

    2013-10-01

    Full Text Available The pitting corrosion of Ni3(Si,Ti intermetallic compound was investigated as function of chloride concentration by using electrochemical method and scanning electron microscope in sodium chloride solutions at 293 K.  In addition, the pitting corrosion of type C276 alloy was also studied under the same experimental condition for comparison.  The pitting potential obtained for the intermetallic compound decreased with increasing chloride concentration.  The specific pitting potential and pitting potential of Ni3(Si,Ti were lower than those of C276 alloy, which means that the pitting corrosion resistance of C276 alloy was higher than that of Ni3(Si,Ti.

  2. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

    2017-05-15

    The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

  3. Crystal structure of the new diamond-like semiconductor CuMn2InSe4

    Indian Academy of Sciences (India)

    Abstract. The crystal structure of the semiconductor compound CuMn2InSe4 was analysed using X-ray powder ... properties arising from the presence of magnetic ions in the ... by SEM technique, using a Hitachi S2500 microscope equip-.

  4. Deep-level defects in semiconductors: studies by magnetic resonance

    International Nuclear Information System (INIS)

    Ammerlaan, C.A.J.

    1983-01-01

    This work is divided into two parts. In the first one, the following topics are discussed: paramagnetic centers in semiconductors, principles of magnetic resonance, spin-Hamiltonian, g-tensor, hyperfine interaction, magnetic resonance spectrometer. In the second part it is dicussed defects studied by magnetic resonance including vacancy and divacancy in silicon, iron in silicon, nitrogen in diamond and antisite defects in III-V compounds. (A.C.A.S.) [pt

  5. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  6. Vacuum Arc Melting Processes for Biomedical Ni-Ti Shape Memory Alloy

    Directory of Open Access Journals (Sweden)

    Tsai De-Chang

    2015-01-01

    Full Text Available This study primarily involved using a vacuum arc remelting (VAR process to prepare a nitinol shape-memory alloy with distinct ratios of alloy components (nitinol: 54.5 wt% to 57 wt%. An advantage of using the VAR process is the adoption of a water-cooled copper crucible, which effectively prevents crucible pollution and impurity infiltration. Optimising the melting production process enables control of the alloy component and facilitates a uniformly mixed compound during subsequent processing. This study involved purifying nickel and titanium and examining the characteristics of nitinol alloy after alloy melt, including its microstructure, mechanical properties, phase transition temperature, and chemical components.

  7. Vacuum Arc Melting Processes for Biomedical Ni-Ti Shape Memory Alloy

    OpenAIRE

    Tsai De-Chang; Chiang Chen-Hsueh

    2015-01-01

    This study primarily involved using a vacuum arc remelting (VAR) process to prepare a nitinol shape-memory alloy with distinct ratios of alloy components (nitinol: 54.5 wt% to 57 wt%). An advantage of using the VAR process is the adoption of a water-cooled copper crucible, which effectively prevents crucible pollution and impurity infiltration. Optimising the melting production process enables control of the alloy component and facilitates a uniformly mixed compound during subsequent processi...

  8. Superconductivity in compensated and uncompensated semiconductors

    Directory of Open Access Journals (Sweden)

    Youichi Yanase and Naoyuki Yorozu

    2008-01-01

    Full Text Available We investigate the localization and superconductivity in heavily doped semiconductors. The crossover from the superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. The microscopic inhomogeneity and the thermal superconducting fluctuation are taken into account using the self-consistent 1-loop order theory. The superconductor-insulator transition accompanies the crossover from the host band to the impurity band. We point out an enhancement of the critical temperature Tc around the crossover. Further localization of electron wave functions leads to the localization of Cooper pairs and induces the pseudogap. We find that both the doping compensation by additional donors and the carrier increase by additional acceptors suppress the superconductivity. A theoretical interpretation is proposed for the superconductivity in the boron-doped diamond, SiC, and Si.

  9. Effect of V or Zr addition on the mechanical properties of the mechanically alloyed Al-8wt%Ti alloys

    International Nuclear Information System (INIS)

    Moon, I.H.; Lee, J.H.; Lee, K.M.; Kim, Y.D.

    1995-01-01

    Mechanical alloying (MA) of Al-Ti alloy, being a solid state process, offers the unique advantage of producing homogeneous and fine dispersions of thermally stable Al 3 Ti phase, where the formation of the fine Al 3 Ti phase by the other method is restricted from the thermodynamic viewpoint. The MA Al-Ti alloys show substantially higher strength than the conventional Al alloys at the elevated temperature due to the presence of Al 3 Ti as well as Al 4 C 3 and Al 2 O 3 , of which the last two phases were introduced during MA process. The addition of V or Zr to Al-Ti alloy was known to decrease the lattice mismatch between the intermetallic compound and the aluminum matrix, and such decrease in lattice mismatching can influence positively the high temperature mechanical strength of the MA Al-Ti by increasing the resistance to dispersoid coarsening at the elevated temperature. In the present study, therefore, the mechanical behavior of the MA Al-Ti-V and Al-Ti-Zr alloys were investigated in order to evaluate the effect of V or Zr addition on the mechanical properties of the MA Al-8Ti alloy at high temperature

  10. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  11. DENSITY-FUNCTIONAL STUDY OF U-Mo AND U-Zr ALLOYS

    Energy Technology Data Exchange (ETDEWEB)

    Landa, A; Soderlind, P; Turchi, P A

    2010-11-01

    Density-functional theory previously used to describe phase equilibria in U-Zr alloys [A. Landa, P. Soederlind, P.E.A. Turchi, J. Alloys Comp. 478 (2009) 103-110] is extended to investigate the ground-state properties of U-Mo solid solutions. We discuss how the heat of formation in both alloys correlates with the charge transfer between the alloy components, and how the specific behavior of the density of states in the vicinity of the Fermi level promotes the stabilization of the U{sub 2}Mo compound. Our calculations prove that, due to the existence of a single {gamma}-phase over the typical fuel operation temperatures, {gamma}-U-Mo alloys should indeed have much lower constituent redistribution than {gamma}-U-Zr alloys for which binodal decomposition causes a high degree of constituent redistribution.

  12. Explosive device of conduit using Ti Ni alloy

    Directory of Open Access Journals (Sweden)

    A. Yu. Kolobov

    2014-01-01

    Full Text Available Presently, materials have been developed which are capable at changing temperate to return significant inelastic deformations, exhibit rubber-like elasticity, convert heat into mechanical work, etc. The aggregate of these effects is usually called the shape memory effect.At present a great number of compounds and alloys with a shape memory effect has been known.These are alloys based on titanium nickelide (TiNi, copper-based alloys (Cu-Al, Cu-Sn, Cu-Al-Ni, Cu-Zn-Si, etc., gold and silver (Ag-Cd, Au-Ag-Cd, Au-Cd-Cu, Au-Zn-Cu, etc., manganese (Mn-Cr, Fe-Cu, Mn-Cu-Ni, Mn-Cu-Zr, Mn-Ni, etc., iron (Fe-Mn, Fe-Ni, Fe-Al, etc., and other compounds.The alloys based on titanium nickelide (nitinol are the most widely used.Alloys with shape memory effect find various applications in engineering and medicine, namely connecting devices, actuators, transformable design, multipurpose medical implants, etc.There is a task of breaking fuel conduit during separating the spacecraft from the rocket in space technology.The paper examines the procedure for design calculation of the separating device of conduit with the use of Ti-Ni alloy. This device can be used instead of the pyro-knives.The device contains two semi-rings from Ti-Ni alloy. In the place of break on the conduit an annular radius groove is made.At a temperature of martensite passage the semi-rings undergo deformation and in the strained state are set in the device. With heating to the temperature of the austenitic passage of bushing macro-deformation the energy stored by the nitinol bushing is great enough to break the conduit on the neck.The procedures of design calculation and response time of device are given.

  13. Formation and characterization of Al–Ti–Nb alloys by electron-beam surface alloying

    Energy Technology Data Exchange (ETDEWEB)

    Valkov, S., E-mail: stsvalkov@gmail.com [Institute of Electronics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee blvd., 1784 Sofia (Bulgaria); Petrov, P. [Institute of Electronics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee blvd., 1784 Sofia (Bulgaria); Lazarova, R. [Institute of Metal Science, Equipment and Technologies with Hydro and Aerodynamics Center, Bulgarian Academy of Science, 67 Shipchenski Prohod blvd., 1574 Sofia (Bulgaria); Bezdushnyi, R. [Department of Solid State Physics and Microelectronics, Faculty of Physics, Sofia University “St. Kliment Ohridsky”, 1164 Sofia (Bulgaria); Dechev, D. [Institute of Electronics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee blvd., 1784 Sofia (Bulgaria)

    2016-12-15

    Highlights: • Al–Ti–Nb surface alloys have been successfully obtained by electron-beam surface alloying technology. • The alloys consist of (Ti,Nb)Al{sub 3} fractions, distributed in the biphasic structure of (Ti,Nb)Al{sub 3} particles dispersed in α-Al. • The alloying speed does not affect the lattice parameters of (Ti,Nb)Al{sub 3} and, does not form additional stresses, strains etc. • It was found that lower velocity of the specimen motion during the alloying process develops more homogeneous structures. • The measured hardness of (Ti,Nb)Al{sub 3} compound reaches 775 HV[kg/cm{sup 2}] which is much greater than the values of NbAl{sub 3}. - Abstract: The combination of attractive mechanical properties, light weight and resistance to corrosion makes Ti-Al based alloys applicable in many industrial branches, like aircraft and automotive industries etc. It is known that the incorporation of Nb improves the high temperature performance and mechanical properties. In the present study on Al substrate Ti and Nb layers were deposited by DC (Direct Current) magnetron sputtering, followed by electron-beam alloying with scanning electron beam. It was chosen two speeds of the specimen motion during the alloying process: V{sub 1} = 0.5 cm/s and V{sub 2} = 1 cm/s. The alloying process was realized in circular sweep mode in order to maintain the melt pool further. The obtained results demonstrate a formation of (Ti,Nb)Al{sub 3} fractions randomly distributed in biphasic structure of intermetallic (Ti,Nb)Al{sub 3} particles, dispersed in α-Al solid solution. The evaluated (Ti,Nb)Al{sub 3} lattice parameters are independent of the speed of the specimen motion and therefore the alloying speed does not affect the lattice parameters and thus, does not form additional residual stresses, strains etc. It was found that lower velocity of the specimen motion during the alloying process develops more homogeneous structures. The metallographic analyses demonstrate a

  14. Interfacial Reaction During Dissimilar Joining of Aluminum Alloy to Magnesium and Titanium Alloys

    Science.gov (United States)

    Robson, J. D.; Panteli, A.; Zhang, C. Q.; Baptiste, D.; Cai, E.; Prangnell, P. B.

    Ultrasonic welding (USW), a solid state joining process, has been used to produce welds between AA6111 aluminum alloy and AZ31 magnesium alloys or titanium alloy Ti-6Al-4V. The mechanical properties of the welds have been assessed and it has been shown that it is the nature and thickness of the intermetallic compounds (IMCs) at the joint line that are critical in determining joint strength and particularly fracture energy. Al-Mg welds suffer from a very low fracture energy, even when strength is comparable with that of similar metal Mg-Mg welds, due to a thick IMC layer always being formed. It is demonstrated that in USW of Al-Ti alloy the slow interdiffusion kinetics means that an IMC layer does not form during welding, and fracture energy is greater. A model has been developed to predict IMC formation during welding and provide an understanding of the critical factors that determine the IMC thickness. It is predicted that in Al-Mg welds, most of the lMC thickening occurs whilst the IMC regions grow as separate islands, prior to the formation of a continuous layer.

  15. Laser deposition rates of thin films of selected metals and alloys

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

    Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

  16. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  17. Solid solution lithium alloy cermet anodes

    Science.gov (United States)

    Richardson, Thomas J.

    2013-07-09

    A metal-ceramic composite ("cermet") has been produced by a chemical reaction between a lithium compound and another metal. The cermet has advantageous physical properties, high surface area relative to lithium metal or its alloys, and is easily formed into a desired shape. An example is the formation of a lithium-magnesium nitride cermet by reaction of lithium nitride with magnesium. The reaction results in magnesium nitride grains coated with a layer of lithium. The nitride is inert when used in a battery. It supports the metal in a high surface area form, while stabilizing the electrode with respect to dendrite formation. By using an excess of magnesium metal in the reaction process, a cermet of magnesium nitride is produced, coated with a lithium-magnesium alloy of any desired composition. This alloy inhibits dendrite formation by causing lithium deposited on its surface to diffuse under a chemical potential into the bulk of the alloy.

  18. Grindability of dental cast Ti-Ag and Ti-Cu alloys.

    Science.gov (United States)

    Kikuchi, Masafumi; Takahashi, Masatoshi; Okabe, Toru; Okuno, Osamu

    2003-06-01

    Experimental Ti-Ag alloys (5, 10, and 20 mass% Ag) and Ti-Cu alloys (2, 5, and 10 mass% Cu) were cast into magnesia molds using a dental casting machine, and their grindability was investigated. At the lowest grinding speed (500 m min(-1)), there were no statistical differences among the grindability values of the titanium and titanium alloys. The grindability of the alloys increased as the grinding speed increased. At the highest grinding speed (1500 m x min(-1)), the grindability of the 20% Ag, 5% Cu, and 10% Cu alloys was significantly higher than that of titanium. It was found that alloying with silver or copper improved the grindability of titanium, particularly at a high speed. It appeared that the decrease in elongation caused by the precipitation of small amounts of intermetallic compounds primarily contributed to the favorable grindability of the experimental alloys.

  19. Development of metallic system multi-composite materials for compound environment and corrosion monitoring technology

    International Nuclear Information System (INIS)

    Kiuchi, Kiyoshi

    1996-01-01

    For the structural materials used for the pressure boundary of nuclear power plants and others, the long term durability over several decades under the compound environment, in which the action of radiation and the corrosion and erosion in the environment of use are superposed, is demanded. To its controlling factors, the secular change of materials due to irradiation ageing and the chemical and physical properties of extreme compound environment are related complicatedly. In the first period of this research, the development of the corrosion-resistant alloys with the most excellent adaptability to environments was carried out by the combination of new alloy design and alloy manufacturing technology. In the second period, in order to heighten the adaptability as the pressure boundary materials between different compound environments, the creation of metallic system multi-composite materials has been advanced. Also corrosion monitoring technique is being developed. The stainless steel for water-cooled reactors, the wear and corrosion-resistant superalloy for reactor core, the corrosion-resistant alloy and the metallic refractory material for reprocessing nitric acid reaction vessels are reported. (K.I.)

  20. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  1. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  2. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  3. Electrolytic photodissociation of chemical compounds by iron oxide electrodes

    Science.gov (United States)

    Somorjai, Gabor A.; Leygraf, Christofer H.

    1984-01-01

    Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor diode having visible light as its sole source of energy. The diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

  4. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  5. A Review of Dissimilar Welding Techniques for Magnesium Alloys to Aluminum Alloys

    Directory of Open Access Journals (Sweden)

    Liming Liu

    2014-05-01

    Full Text Available Welding of dissimilar magnesium alloys and aluminum alloys is an important issue because of their increasing applications in industries. In this document, the research and progress of a variety of welding techniques for joining dissimilar Mg alloys and Al alloys are reviewed from different perspectives. Welding of dissimilar Mg and Al is challenging due to the formation of brittle intermetallic compound (IMC such as Mg17Al12 and Mg2Al3. In order to increase the joint strength, three main research approaches were used to eliminate or reduce the Mg-Al intermetallic reaction layer. First, solid state welding techniques which have a low welding temperature were used to reduce the IMCs. Second, IMC variety and distribution were controlled to avoid the degradation of the joining strength in fusion welding. Third, techniques which have relatively controllable reaction time and energy were used to eliminate the IMCs. Some important processing parameters and their effects on weld quality are discussed, and the microstructure and metallurgical reaction are described. Mechanical properties of welds such as hardness, tensile, shear and fatigue strength are discussed. The aim of the report is to review the recent progress in the welding of dissimilar Mg and Al to provide a basis for follow-up research.

  6. A Review of Dissimilar Welding Techniques for Magnesium Alloys to Aluminum Alloys

    Science.gov (United States)

    Liu, Liming; Ren, Daxin; Liu, Fei

    2014-01-01

    Welding of dissimilar magnesium alloys and aluminum alloys is an important issue because of their increasing applications in industries. In this document, the research and progress of a variety of welding techniques for joining dissimilar Mg alloys and Al alloys are reviewed from different perspectives. Welding of dissimilar Mg and Al is challenging due to the formation of brittle intermetallic compound (IMC) such as Mg17Al12 and Mg2Al3. In order to increase the joint strength, three main research approaches were used to eliminate or reduce the Mg-Al intermetallic reaction layer. First, solid state welding techniques which have a low welding temperature were used to reduce the IMCs. Second, IMC variety and distribution were controlled to avoid the degradation of the joining strength in fusion welding. Third, techniques which have relatively controllable reaction time and energy were used to eliminate the IMCs. Some important processing parameters and their effects on weld quality are discussed, and the microstructure and metallurgical reaction are described. Mechanical properties of welds such as hardness, tensile, shear and fatigue strength are discussed. The aim of the report is to review the recent progress in the welding of dissimilar Mg and Al to provide a basis for follow-up research. PMID:28788646

  7. A Review of Dissimilar Welding Techniques for Magnesium Alloys to Aluminum Alloys.

    Science.gov (United States)

    Liu, Liming; Ren, Daxin; Liu, Fei

    2014-05-08

    Welding of dissimilar magnesium alloys and aluminum alloys is an important issue because of their increasing applications in industries. In this document, the research and progress of a variety of welding techniques for joining dissimilar Mg alloys and Al alloys are reviewed from different perspectives. Welding of dissimilar Mg and Al is challenging due to the formation of brittle intermetallic compound (IMC) such as Mg 17 Al 12 and Mg₂Al₃. In order to increase the joint strength, three main research approaches were used to eliminate or reduce the Mg-Al intermetallic reaction layer. First, solid state welding techniques which have a low welding temperature were used to reduce the IMCs. Second, IMC variety and distribution were controlled to avoid the degradation of the joining strength in fusion welding. Third, techniques which have relatively controllable reaction time and energy were used to eliminate the IMCs. Some important processing parameters and their effects on weld quality are discussed, and the microstructure and metallurgical reaction are described. Mechanical properties of welds such as hardness, tensile, shear and fatigue strength are discussed. The aim of the report is to review the recent progress in the welding of dissimilar Mg and Al to provide a basis for follow-up research.

  8. A first-principles study of the electronic structure of the sulvanite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Osorio-Guillen, J.M., E-mail: jorge.osorio@fisica.udea.edu.co [Instituto de Fisica, Universidad de Antioquia, Medellin A.A. 1226 (Colombia); Espinosa-Garcia, W.F. [Instituto de Fisica, Universidad de Antioquia, Medellin A.A. 1226 (Colombia)

    2012-03-15

    We have investigated by means of first-principles total energy calculations the electronic structure of the sulvanite compounds: Cu{sub 3}VS{sub 4}, Cu{sub 3}NbS{sub 4} and Cu{sub 3}TaS{sub 4}; the later is a possible candidate as a p-type transparent conductor with potential applications in solar cells and electrochromic devices. The calculated electronic structure shows that these compounds are indirect band gap semiconductors, with the valence band maximum located at the R-point and the conduction band minimum located at the X-point. The character of the valence band maximum is dominated by Cu d-states and the character of the conduction band minimum is due to the d-states of the group five elements. From the calculated charge density and electron localisation function we can conclude that the sulvanite compounds are polar covalent semiconductors.

  9. Microstructural characterization and phase transformation of ternary alloys near at Al3Ti compound

    International Nuclear Information System (INIS)

    Angeles Ch, C.

    1999-01-01

    This research work is related with the structural characteristic and compositional values of the crystalline phases, which are found in ternary alloys of Ti-Al-Fe and TI-Al-Cu. These types of alloys were obtained using a rapid solidification technique (10 3 -10 4 K/s) and pure elements such as Al, Ti, Fe and Cu (99.99%). These cooling velocities allow the formation of stable phases and small grain sizes (approximately in range of a few micras). The obtained results indicate the presence of Al 3 Ti and others phases of L1 2 type. These phases are commonly found in a matrix rich in A1. The microalloyed elements (Cu and Fe) substitute the aluminum in both kinds of phases. Alloys with low content of Cu show transition states from the tetragonal structure DO 22 to the cubic phases L1 2 . The structural characteristics of the alloys are related with some microhardness measurement. The results show that the presence of the L1 2 phase tends to increase to hardness depending of the content of this phase

  10. Coated air-stable cobalt--rare earth alloy particles and method

    International Nuclear Information System (INIS)

    Smeggil, J.C.; Charles, R.J.

    1975-01-01

    A process is described for producing novel air-stable coated particles of a magnetic transition metal-rare earth alloys. An organometallic compound which decomposes at a temperature below 500 0 C is heated to produce a metal vapor which is contacted with particles of a transition metal-rare earth alloy to deposit a metal coating on the particles. (U.S.)

  11. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  12. Microstructure and Corrosion Behavior of Ni-Alloy/CrN Nanolayered Coatings

    Directory of Open Access Journals (Sweden)

    Hao-Hsiang Huang

    2011-01-01

    Full Text Available The Ni-alloy/CrN nanolayered coatings, Ni-Al/CrN and Ni-P/CrN, were deposited on (100 silicon wafer and AISI 420 stainless steel substrates by dual-gun sputtering technique. The influences of the layer microstructure on corrosion behavior of the nanolayered thin films were investigated. The bilayer thickness was controlled approximately 10 nm with a total coating thickness of 1m. The single-layer Ni-alloy and CrN coatings deposited at 350∘C were also evaluated for comparison. Through phase identification, phases of Ni-P and Ni-Al compounds were observed in the single Ni-alloy layers. On the other hand, the nanolayered Ni-P/CrN and Ni-Al/CrN coatings showed an amorphous/nanocrystalline microstructure. The precipitation of Ni-Al and Ni-P intermetallic compounds was suppressed by the nanolayered configuration of Ni-alloy/CrN coatings. Through Tafel analysis, the corr and corr values ranged from –0.64 to –0.33 V and 1.42×10−5 to 1.14×10−6 A/cm2, respectively, were deduced for various coating assemblies. The corrosion mechanisms and related behaviors of the coatings were compared. The coatings with a nanolayered Ni-alloy/CrN configuration exhibited a superior corrosion resistance to single-layer alloy or nitride coatings.

  13. Effect of boron on the properties of ordered Ni-Mo alloys

    International Nuclear Information System (INIS)

    Tawancy, H.M.

    1994-01-01

    Ordered alloys and intermetallic compounds have long been known to possess a number of technologically useful properties, however, their structural applications is limited by relatively poor ductility. Efforts to improve the mechanical strength of these materials have led to the recognition that small additions of B improve the ductility of intermetallic compounds, based upon the L1 2 , superlattice such as Ni 3 Al and Ni 3 Si. Also it has been demonstrated that small additions of B improve the ductility of binary ordered Ni-Ni 4 Mo alloys. The objective of this study is to demonstrate that critical additions of B to selected Ni-Mo alloys could significantly improve their ductility and corrosion properties in the ordered state while maintaining a similar level of other properties, particularly, weldability. The effect of B on the ordered microstructure was emphasized

  14. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  15. Surface coatings of mixed hard alloy powder metals sintered-on in vacuo

    International Nuclear Information System (INIS)

    Knotek, O.; Reimann, H.

    1980-01-01

    No technological difficulties are to be encountered in the processing of pseudo hard alloys in the form of powder compounds of conventional nickel base hard alloys with carbides. There is a great alloy influence on the resulting structures of the surface layers. Under some processing conditions the tungsten carbide is completely dissolved from molten matrix alloy. Hard phases on chromium carbide basis resulted upon cooling. Induced chromium carbide Cr 3 C 2 retains its structure while absorbing large amounts of iron into its grid. It can be concluded that not only alloying properties, but also eminently structural criterions are decisive for the stability of the applied supplementary hard phases. (orig.) [de

  16. D.R.F. - Grenoble Department of Fundamental Research. Semi-annual bulletin Nr 2, 1972 2. semester

    International Nuclear Information System (INIS)

    Blachot, J.; Carraz, L.C.; Ferrieu, A.; Monnand, E.; Brissot, R.; Crancon, J.; Ristori, C.; Schussler, F.; Moussa, A.; Desreumaux, S.; Chisolm, A.; Perrin, P.; Bouchez, R.; Lagrange, R.; Casali, G.; Moser, P.; Verdone, J.; Boissier, M.; Ligeon, E.; Soulie, J.C.; Minier, C.; Lauzier, J.; Charles, M.; Cox, R.T.; Herve, A.; Picard, R.; Rius, G.; Santier, C.; Gloux, J.; Gaillard, J.; Lamotte, B.; Rechenberg, H.; Billard, L.; Chamberod, A.; Natta, M.; Chamard-Bois, R.; Buisson, G.; Fournier, J.M.; Blaise, A.; Belakhovski, M.; Boucher, J.P.; Nechtschein, M.; Marticorena, B.; Nechtschein, M.; Kervennal, J.; Ligeon, E.; Bruel, M.; Pautrat, J.L.; Bontemps, A.; Barruel, F.; Lissalde, F.C.; Peuzin, J.C.; Tissier, A.; Boyer, P.; Baudry, A.; Hombrouck, J.; Rey, P.; Decorps, M.; Genoud, F.; Schouler, M.C.; Colbeau, A.; Vignais, P.M.; Piette, L.H.; Albrand, J.P.; Cogne, A.; Gagnaire, D.; Martin, J.; Robert, J.B.; Briere, R.; Vignon, M.; Vottero, P.; Ellinger, Y.; Subra, R.; Rassat, A.; Cauquis, G.; Serve, D.; Genies, M.; Ayant, Y.; Belorizki, E.; Gagnaire, D.; Taieb, M.; Hudry-Clergeon, G.; Paturel, L.; Suscillon, M.; Dognin, J.; Girardet, J.L.; Mouriquand, J.; Gorka, C.; Satre, M.; Lunardi, J.; Vignais, P.V.; Huet, J.; Andre, J.; Vignais, P.M.; Colomb, M.G.; Cheruy, Ariette; Polverelli, M.; Teoule, R.; Gilet, R.; Gagnaire, J.; Laffon, J.L.; Servoz-Gavin, P.; Lachet, B.; Constantinescu, O.; Hoffstein, V.; RAY, D.K.; Saint-Paul, M.; Chambert, G.; Ribeiro, C.A.

    1973-01-01

    This document gathers several study reports in the field of fundamental research. The first part contains studies which more particularly addressed nuclear physics: study of fission and fission products by fission product distribution measurement and nuclear spectroscopy, study of light nuclei by fast neutrons, study of the neutron electric dipolar moment). The second part concerns condensed matter physics: defects and effects of radiations in solids (pure metals, alloys, semiconductors, ionic crystals, molecular crystals or ferro-electric crystals with hydrogen bond), magnetism (study of magnetic properties of different materials such as transition element compounds and alloys, rare earth compounds and alloys, and actinides; studies of other magnetism-related issues: two-dimensional magnetic order, magnetic wall structure, critical phenomenon and phase transformation, crystalline field in refractory metals, influence of conduction electrons, free-radicals in solid phase; crystal structure and properties of transition element compounds, alloys and complexes; studies of semiconductor properties and behaviour). The third part deals with physical chemistry and biophysics: studies of steady free radicals, use of free-radical spin markers in biology, stereochemistry and conformation studies, studies of vegetal macromolecules, theoretical chemistry, chemically-induced nuclear polarisation, organic and analytic electrochemistry, studies of organic photochemistry, proton dynamics in the hydrogen bond, studies of molecular movement, studies of polymers. The fourth part concerns biology: protein structure and functions, biological membrane structure and functions, radiobiology, vegetal physiology, medical research. The last chapters address advanced techniques, general services (electronic paramagnetic resonance) and applied research (pollution study: purification kinetics of river water in its torrential regime)

  17. A microprocessor based on a two-dimensional semiconductor

    Science.gov (United States)

    Wachter, Stefan; Polyushkin, Dmitry K.; Bethge, Ole; Mueller, Thomas

    2017-04-01

    The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor--molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

  18. Thermodynamic properties of some gallium-based binary alloys

    International Nuclear Information System (INIS)

    Awe, O.E.; Odusote, Y.A.; Akinlade, O.; Hussain, L.A.

    2008-01-01

    We have studied the concentration dependence of the free energy of mixing, concentration-concentration fluctuations in the long-wavelength limit, the chemical short-range order parameter, the enthalpy and entropy of mixing of Ga-Zn, Ga-Mg and Al-Ga binary alloys at different temperatures using a quasi-chemical approximation for compound forming binary alloys and that for simple regular alloys. From the study of the thermodynamic quantities, we observed that thermodynamic properties of Ga-Zn and Al-Ga exhibit positive deviations from Raoultian behaviour, while Ga-Mg exhibits negative deviation. Hence, this study reveals that both Ga-Zn and Al-Ga are segregating systems, while chemical order exists in Ga-Mg alloy in the whole concentration range. Furthermore, our investigation indicate that Al-Ga binary alloy have a tendency to exhibit ideal mixture behaviour in the concentration range 0≤c Al ≤0.30 and 0.7≤c Al ≤1

  19. Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

    2005-01-01

    The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

  20. Development of Pb-Free Nanocomposite Solder Alloys

    Directory of Open Access Journals (Sweden)

    Animesh K. Basak

    2018-04-01

    Full Text Available As an alternative to conventional Pb-containing solder material, Sn–Ag–Cu (SAC based alloys are at the forefront despite limitations associated with relatively poor strength and coarsening of grains/intermetallic compounds (IMCs during aging/reflow. Accordingly, this study examines the improvement of properties of SAC alloys by incorporating nanoparticles in it. Two different types of nanoparticles were added in monolithic SAC alloy: (1 Al2O3 or (2 Fe and their effect on microstructure and thermal properties were investigated. Addition of Fe nanoparticles leads to the formation of FeSn2 IMCs alongside Ag3Sn and Cu6Sn5 from monolithic SAC alloy. Addition of Al2O3 nano-particles do not contribute to phase formation, however, remains dispersed along primary β-Sn grain boundaries and act as a grain refiner. As the addition of either Fe or Al2O3 nano-particles do not make any significant effect on thermal behavior, these reinforced nanocomposites are foreseen to provide better mechanical characteristics with respect to conventional monolithic SAC solder alloys.

  1. Semiconductor-metal transitions in liquid In100-xSex alloys: A concentration-induced transition

    International Nuclear Information System (INIS)

    Ferlat, G.; San Miguel, A.; Xu, H.; Aouizerat, A.; Blase, X.; Zuniga, J.; Munoz-Sanjose, V.

    2004-01-01

    The electronic and structural properties of In 100-x Se x liquid alloys close to their melting points have been investigated by combining x-ray-absorption experiments with ab initio molecular-dynamics simulations. Extended x-ray-absorption fine-structure data have been acquired at both the In and Se K edges in a large concentration range (x=20% to x=50% of Se content). Ab initio molecular-dynamics simulations have been carried out at the two most extreme concentrations explored experimentally. Liquid InSe is found to retain a semiconducting behavior which results from a low-dimensional structure, reminiscent of that of the ambient solid phase, characterized by strong In-Se interactions within tetrahedral units. On the other side, the In 80 Se 20 liquid alloy shows a metalliclike behavior which is correlated to a more dense-packed structure

  2. Effect of alloying on elastic properties of ZrN based transition metal nitride alloys

    KAUST Repository

    Kanoun, Mohammed; Goumri-Said, Souraya

    2014-01-01

    We report the effect of composition and metal sublattice substitutional element on the structural, elastic and electronic properties of ternary transition metal nitrides Zr1-xMxN with M=Al, Ti, Hf, V, Nb, W and Mo. The analysis of the elastic constants, bulk modulus, shear modulus, Young's modulus, and Poisson's ratio provides insights regarding the mechanical behavior of Zr1-xMxN. We predict that ternary alloys are more ductile compared to their parent binary compounds. The revealed trend in the mechanical behavior might help for experimentalists on the ability of tuning the mechanical properties during the alloying process by varying the concentration of the transition metal. © 2014 Elsevier B.V.

  3. Effect of alloying on elastic properties of ZrN based transition metal nitride alloys

    KAUST Repository

    Kanoun, Mohammed

    2014-09-01

    We report the effect of composition and metal sublattice substitutional element on the structural, elastic and electronic properties of ternary transition metal nitrides Zr1-xMxN with M=Al, Ti, Hf, V, Nb, W and Mo. The analysis of the elastic constants, bulk modulus, shear modulus, Young\\'s modulus, and Poisson\\'s ratio provides insights regarding the mechanical behavior of Zr1-xMxN. We predict that ternary alloys are more ductile compared to their parent binary compounds. The revealed trend in the mechanical behavior might help for experimentalists on the ability of tuning the mechanical properties during the alloying process by varying the concentration of the transition metal. © 2014 Elsevier B.V.

  4. Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

    Science.gov (United States)

    Elsayed, H.; Olguín, D.; Cantarero, A.

    2017-12-01

    This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

  5. Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

    Directory of Open Access Journals (Sweden)

    Sandra Andrea Mayén-Hernández

    2014-01-01

    Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

  6. Enhancement of antibiotic effect via gold:silver-alloy nanoparticles

    International Nuclear Information System (INIS)

    Moreira dos Santos, Margarida; Queiroz, Margarida João; Baptista, Pedro V.

    2012-01-01

    A strategy for the development of novel antimicrobials is to combine the stability and pleiotropic effects of inorganic compounds with the specificity and efficiency of organic compounds, such as antibiotics. Here we report on the use of gold:silver-alloy (Au:Ag-alloy) nanoparticles, obtained via a single-step citrate co-reduction method, combined to conventional antibiotics to enhance their antimicrobial effect on bacteria. Addition of the alloy nanoparticles considerably decreased the dose of antibiotic necessary to show antimicrobial effect, both for bacterial cells growing in rich medium in suspension and for bacterial cells resting in a physiological buffer on a humid cellulose surface. The observed effect was more pronounced than the sum of the individual effects of the nanoparticles and antibiotic. We demonstrate the enhancement effect of Au:Ag-alloy nanoparticles with a size distribution of 32.5 ± 7.5 nm mean diameter on the antimicrobial effect of (i) kanamycin on Escherichia coli (Gram-negative bacterium), and (ii) a β-lactam antibiotic on both a sensitive and resistant strain of Staphylococcus aureus (Gram-positive bacterium). Together, these results may pave the way for the combined use of nanoparticle–antibiotic conjugates towards decreasing antibiotic resistance currently observed for certain bacteria and conventional antibiotics.

  7. Enhancement of antibiotic effect via gold:silver-alloy nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Moreira dos Santos, Margarida, E-mail: margarida.santos@fct.unl.pt; Queiroz, Margarida Joao; Baptista, Pedro V. [Universidade Nova de Lisboa, CIGMH, Departamento Ciencias da Vida, Faculdade de Ciencias e Tecnologia (Portugal)

    2012-05-15

    A strategy for the development of novel antimicrobials is to combine the stability and pleiotropic effects of inorganic compounds with the specificity and efficiency of organic compounds, such as antibiotics. Here we report on the use of gold:silver-alloy (Au:Ag-alloy) nanoparticles, obtained via a single-step citrate co-reduction method, combined to conventional antibiotics to enhance their antimicrobial effect on bacteria. Addition of the alloy nanoparticles considerably decreased the dose of antibiotic necessary to show antimicrobial effect, both for bacterial cells growing in rich medium in suspension and for bacterial cells resting in a physiological buffer on a humid cellulose surface. The observed effect was more pronounced than the sum of the individual effects of the nanoparticles and antibiotic. We demonstrate the enhancement effect of Au:Ag-alloy nanoparticles with a size distribution of 32.5 {+-} 7.5 nm mean diameter on the antimicrobial effect of (i) kanamycin on Escherichia coli (Gram-negative bacterium), and (ii) a {beta}-lactam antibiotic on both a sensitive and resistant strain of Staphylococcus aureus (Gram-positive bacterium). Together, these results may pave the way for the combined use of nanoparticle-antibiotic conjugates towards decreasing antibiotic resistance currently observed for certain bacteria and conventional antibiotics.

  8. Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

    Directory of Open Access Journals (Sweden)

    Kazuo Takimiya et al

    2007-01-01

    Full Text Available Electronic structure of air-stable, high-performance organic field-effect transistor (OFET material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT, was discussed based on the molecular orbital calculations. It was suggested that the stability is originated from relatively low-lying HOMO level, despite the fact that the molecule contains highly π-extended aromatic core ([1]benzothieno[3,2-b]benzothiophene, BTBT with four fused aromatic rings like naphthacene. This is rationalized by the consideration that the BTBT core is not isoelectronic with naphthacene but with chrysene, a cata-condensed phene with four benzene rings. It is well known that the acene-type compound is unstable among its structural isomers with the same number of benzene rings. Therefore, polycyclic aromatic compounds possessing the phene-substructure will be good candidates for stable organic semiconductors. Considering synthetic easiness, we suggest that the BTBT-substructure is the molecular structure of choice for developing air-stable organic semiconductors.

  9. Effective and Environmentally Friendly Nickel Coating on the Magnesium Alloy

    Directory of Open Access Journals (Sweden)

    Ivana Škugor Rončević

    2016-12-01

    Full Text Available The low density and good mechanical properties make magnesium and its alloys attractive construction materials in the electronics, automotive, and aerospace industry, together with application in medicine due to their biocompatibility. Magnesium AZ91D alloy is an alloy with a high content of aluminum, whose mechanical properties overshadow the low corrosion resistance caused by the composition of the alloy and the existence of two phases: α magnesium matrix and β magnesium aluminum intermetallic compound. To improve the corrosion resistance, it is necessary to find an effective protection method for the alloy surface. Knowing and predicting electrochemical processes is an essential for the design and optimization of protective coatings on magnesium and its alloys. In this work, the formations of nickel protective coatings on the magnesium AZ91D alloy surface by electrodeposition and chemical deposition, are presented. For this purpose, environmentally friendly electrolytes were used. The corrosion resistance of the protected alloy was determined in chloride medium using appropriate electrochemical techniques. Characterization of the surface was performed with highly sophisticated surface-analytical methods.

  10. Study of lead iodide semiconductor crystals doped with silver

    Czech Academy of Sciences Publication Activity Database

    Matuchová, Marie; Žďánský, Karel; Zavadil, Jiří; Maixner, J.; Alexiev, D.; Procházková, Olga

    2006-01-01

    Roč. 9, 1/3 (2006), s. 394-398 ISSN 1369-8001. [DRIP /11./. Beijing, 15.09.2005-19.09.2005] R&D Projects: GA ČR(CZ) GA102/03/0379; GA ČR(CZ) GA102/04/0959; GA AV ČR(CZ) KSK1010104 Institutional research plan: CEZ:AV0Z20670512 Keywords : rare earth compounds * detector circuits * semiconductor technology Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.038, year: 2006

  11. EPR of defects in semiconductors: past, present, future

    International Nuclear Information System (INIS)

    Watkins, G.D.

    1999-01-01

    Important physical concepts learned from early EPR studies of defects in silicon are reviewed. Highlighted are the studies of shallow effective-mass-liked donors and acceptors of deep transition element impurities, and of vacancies and interstitials. It is shown that the concepts learned in silicon translate remarkable well to the corresponding defects in the other elemental and compound semiconductors. The introduction of sensitive optical and electrical detection methods and the recent progress in single defects detection insure the continued vital role of EPR in the future

  12. Investigation of americium-241 metal alloys for target applications

    International Nuclear Information System (INIS)

    Conner, W.V.; Rockwell International Corp., Golden, CO

    1982-01-01

    Several 241 Am metal alloys have been investigated for possible use in the Lawrence Livermore National Laboratory Radiochemical Diagnostic Tracer Program. Several properties were desired for an alloy to be useful for tracer program applications. A suitable alloy would have a fairly high density, be ductile, homogeneous and easy to prepare. Alloys investigated have included uranium-americium, aluminium-americium, and cerium-americium. Uranium-americium alloys with the desired properties proved to be difficult to prepare, and work with this alloy was discontinued. Aluminium-americium alloys were much easier to prepare, but the alloy consisted of an aluminium-americium intermetallic compound (AmAl 4 ) in an aluminum matrix. This alloy could be cast and formed into shapes, but the low density of aluminum, and other problems, made the alloy unsuitable for the intended application. Americium metal was found to have a high solid solubility in cerium and alloys prepared from these two elements exhibited all of the properties desired for the tracer program application. Cerium-americium alloys containing up to 34 wt% americium have been prepared using both co-melting and co-reduction techniques. The latter technique involves co-reduction of cerium tetrafluoride and americium tetrafluoride with calcium metal in a sealed reduction vessel. Casting techniques have been developed for preparing up to eight 2.2 cm (0.87 in) diameter disks in a single casting, and cerium-americium metal alloy disks containing from 10 to 25 wt% 241 Am have been prepared using these techniques. (orig.)

  13. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  14. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  15. Nature of radiative recombination processes in layered semiconductor PbCdI{sub 2} nanostructural scintillation material

    Energy Technology Data Exchange (ETDEWEB)

    Bukivskii, A.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gnatenko, Yu.P., E-mail: yuriygnatenko@ukr.net [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Piryatinskii, Yu.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gamernyk, R.V. [Lviv National University, 8 Kyryl o and Mefodiy Str., 29005 Lviv (Ukraine)

    2017-05-15

    We report on the efficient photoluminescence (PL) and radioluminescence (RL) of the PbI{sub 2} nanoclusters (NCLs), which are naturally formed in the nanostructured Pb{sub 1-X}Cd{sub x}I{sub 2} alloys (X=0.70). Here, we carried out the studies of the nature of radiative recombination processes in the NCLs of various sizes by measuring PL temperature evolution. Our results indicate that at low temperatures the PL is mainly caused by exciton emission and recombination of donor-acceptor pairs, generated in volume of large NCLs. The broad bands, which are associated with the deep intrinsic surface states, including self-trapped excitons (STEs), are dominant in the PL spectra at higher temperature (>100 K). Our work shows that the nature of emission, associated with RL bands is analogous to that for PL bands. It was shown that the investigated nanostructured material is strongly radiation-resistant. Thus, the Pb{sub 1-X}Cd{sub X}I{sub 2} alloys can be considered as new effective layered semiconductor nanostructured materials which can be suitable for the elaboration of perspective semiconductor scintillators. These nanomaterials have promising prospects for applications in new generations of devices for biomedical diagnostics and industrial imaging applications. - Highlights: •The intense PL and RL of nanostructural PbCdI{sub 2} alloys were observed. •The nature of recombination processes of the nanoscintillators was established. •The low temperature PL is caused by exciton and donor-acceptor pairs recombination. •The broad PL bands are due to the deep intrinsic states formed on the NCLs surface. •The PL associated with STEs for NCLs of different sizes was analyzed in detail. •It was shown that the nature of PL and RL spectra is same.

  16. Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

    Science.gov (United States)

    Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

    2018-03-14

    Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

  17. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  18. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  19. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  20. Effects of filling material and laser power on the formation of intermetallic compounds during laser-assisted friction stir butt welding of steel and aluminum alloys

    Science.gov (United States)

    Fei, Xinjiang; Jin, Xiangzhong; Peng, Nanxiang; Ye, Ying; Wu, Sigen; Dai, Houfu

    2016-11-01

    In this paper, two kinds of materials, Ni and Zn, are selected as filling material during laser-assisted friction stir butt welding of Q235 steel and 6061-T6 aluminum alloy, and their influences on the formation of intermetallic compounds on the steel/aluminum interface of the joints were first studied. SEM was used to analyze the profile of the intermetallic compound layer and the fractography of tensile fracture surfaces. In addition, EDS was applied to investigate the types of the intermetallic compounds. The results indicate that a thin iron-abundant intermetallic compound layer forms and ductile fracture mode occurs when Ni is added, but a thick aluminum-abundant intermetallic compound layer generates and brittle fracture mode occurs when Zn is added. So the tensile strength of the welds with Ni as filling material is greater than that with Zn as filling material. Besides, the effect of laser power on the formation of intermetallic compound layer when Ni is added was investigated. The preheated temperature field produced by laser beam in the cross section of workpiece was calculated, and the tensile strength of the joints at different laser powers was tested. Results show that only when suitable laser power is adopted, can suitable preheating temperature of the steel reach, then can thin intermetallic compound layer form and high tensile strength of the joints reach. Either excessive or insufficient laser power will reduce the tensile strength of the joints.

  1. Experiments with the low-melting indium-bismuth alloy system

    International Nuclear Information System (INIS)

    Krepski, R.P.

    1992-01-01

    The following is a laboratory experiment designed to create an interest in and to further understanding of materials science. The primary audience for this material is the junior high school or middle school science student having no previous familiarity with the material, other than some knowledge of temperature and the concepts of atoms, elements, compounds, and chemical reactions. The objective of the experiment is to investigate the indium-bismuth alloy system. Near the eutectic composition, the liquidus is well below the boiling point of water, allowing simple, minimal hazard casting experiments. Such phenomena as metal oxidation, formation of intermetallic compound crystals, and an unusual volume increase during solidification could all be directly observed. A key concept for students to absorb is that properties of an alloy (melting point, mechanical behavior) may not correlate with simple interpolation of properties of the pure components. Discussion of other low melting metals and alloys leads to consideration of environmental and toxicity issues, as well as providing some historical context. Wetting behavior can also be explored

  2. Research on development and application of titanium and zirconium alloys

    International Nuclear Information System (INIS)

    Suzuki, Toshiyuki; Sasano, Hisaoki; Uehara, Shigeaki; Nakano, Osamu; Shibata, Michio

    1983-01-01

    It can be said that titanium and zirconium are new metals from the viewpoint of the history of metals, but both have grown to the materials supporting modern industries, titanium alloys in aerospace and ocean development, and zirconium alloys in nuclear power application. However, the properties of both alloys have not yet been clarified. In this study, the synthesis of TiNi and its properties, precipitation hardening type titanium alloys, and the effect of oxygen on the mechanical properties of both alloys were examined. TiNi is the typical intermetallic compound which shows the peculiar properties. The method of its synthesis by diffusion was examined, and it was clarified that it is useful as a structural material and also as a functional material. Precipitation hardening type alloys have not been developed in titanium alloys, but in this study, the feasibility of several alloy systems was found. Both titanium and zirconium have large affinity to oxygen, and the oxygen absorbed in the manufacturing process cannot be reduced. The tensile property of both alloys was examined in wide temperature range, and the effect of oxygen was clarified. (Kako, I.)

  3. Essential Magnesium Alloys Binary Phase Diagrams and Their Thermochemical Data

    Directory of Open Access Journals (Sweden)

    Mohammad Mezbahul-Islam

    2014-01-01

    Full Text Available Magnesium-based alloys are becoming a major industrial material for structural applications because of their potential weight saving characteristics. All the commercial Mg alloys like AZ, AM, AE, EZ, ZK, and so forth series are multicomponent and hence it is important to understand the phase relations of the alloying elements with Mg. In this work, eleven essential Mg-based binary systems including Mg-Al/Zn/Mn/Ca/Sr/Y/Ni/Ce/Nd/Cu/Sn have been reviewed. Each of these systems has been discussed critically on the aspects of phase diagram and thermodynamic properties. All the available experimental data has been summarized and critically assessed to provide detailed understanding of the systems. The phase diagrams are calculated based on the most up-to-date optimized parameters. The thermodynamic model parameters for all the systems except Mg-Nd have been summarized in tables. The crystallographic information of the intermetallic compounds of different binary systems is provided. Also, the heat of formation of the intermetallic compounds obtained from experimental, first principle calculations and CALPHAD optimizations are provided. In addition, reoptimization of the Mg-Y system has been done in this work since new experimental data showed wider solubility of the intermetallic compounds.

  4. Design, processing and characterization of mechanically alloyed galfenol & lightly rare-earth doped FeGa alloys as smart materials for actuators and transducers

    Science.gov (United States)

    Taheri, Parisa

    Smart materials find a wide range of application areas due to their varied response to external stimuli. The different areas of application can be in our day to day life, aerospace, civil engineering applications, and mechatronics to name a few. Magnetostrictive materials are a class of smart materials that can convert energy between the magnetic and elastic states. Galfenol is a magnetostrictive alloy comprised primarily of the elements iron (Fe) and gallium (Ga). Galfenol exhibits a unique combination of mechanical and magnetostrictive (magnetic) properties that legacy smart materials do not. Galfenol's ability to function while in tension, mechanical robustness and high Curie temperature (600 °C) is attracting interest for the alloy's use in mechanically harsh and elevated temperature environments. Applications actively being investigated include transducers for down-hole use, next-generation fuel injectors, sensing, and energy harvesting devices. Understanding correlations between microstructure, electronic structure, and functional response is key to developing novel magnetostrictive materials for sensor and actuator technologies. To this end, in the first part of this thesis we report successful fabrication and investigation of magnetic and magnetostrictive properties of mechanically alloyed Fe81Ga19 compounds. For the first time, we could measure magnetostrictive properties of mechanically alloyed FeGa compounds. A maximum saturation magnetostriction of 41 ppm was achieved which is comparable to those measured from polycrystalline FeGa alloys prepared by other processing techniques, namely gas atomization and cold rolling. Overall, this study demonstrates the feasibility of large-scale production of FeGa polycrystalline alloys powders by a simple and cost-effective mechanical alloying technique. In the second part of this work, we report for the first time, experimental results pertaining to successful fabrication and advanced characterization of a series

  5. Resistivity changes of some amorphous alloys undergoing nanocrystallization

    Science.gov (United States)

    Barandiarán, J. M.; Fernández Barquín, L.; Sal, J. C. Gómez; Gorría, P.; Hernando, A.

    1993-10-01

    The electrical resistivity of amorphous alloys with compositions: Fe 73.5Nb 3Cu 1Si 13.5B 9, Fe 86Zr 7Cu 1B 6 and Co 80Nb 8B 12 has been studied in the temperature range from 300 to 1100 K, where crystallization occurs. The products of crystallization and the grain size have been studied by X-ray diffraction. In a first step, all the alloys crystallize with small grains of a few nanometers in diameter (nanocrystalline state), and the resistivity behavior at this process accounts for the difference between the amorphous and nanocrystalline phases. The nanocrystalline phases are: α-Fe-Si, α-Fe and fcc Co for the three compounds studied respectively. A second process, at which grain growth and precipitation of intermetallic compounds and borides takes place, has been found for all the alloys. The resistivity is sensitive, not only to the total transformed sample amount, but to the topological distribution of the crystalline phases, and therefore shows a more complex behavior than other well established techniques, as differential scanning calorimetry. This supplementary information given by the resistivity is also discussed.

  6. Formation of equiaxed crystal structures in directionally solidified Al-Si alloys using Nb-based heterogeneous nuclei

    Science.gov (United States)

    Bolzoni, Leandro; Xia, Mingxu; Babu, Nadendla Hari

    2016-01-01

    The design of chemical compositions containing potent nuclei for the enhancement of heterogeneous nucleation in aluminium, especially cast alloys such as Al-Si alloys, is a matter of importance in order to achieve homogeneous properties in castings with complex geometries. We identified that Al3Nb/NbB2 compounds are effective heterogeneous nuclei and are successfully produced in the form of Al-2Nb-xB (x = 0.5, 1 and 2) master alloys. Our study shows that the inoculation of Al-10Si braze alloy with these compounds effectively promotes the heterogeneous nucleation of primary α-Al crystals and reduces the undercooling needed for solidification to take place. Moreover, we present evidences that these Nb-based compounds prevent the growth of columnar crystals and permit to obtain, for the first time, fine and equiaxed crystals in directionally solidified Al-10Si braze alloy. As a consequence of the potent heterogeneous particles, the size of the α-Al crystals was found to be less dependent on the processing conditions, especially the thermal gradient. Finally, we also demonstrate that the enhanced nucleation leads to the refinement of secondary phases such as eutectic silicon and primary silicon particles. PMID:28008967

  7. Phase stability and elastic properties of Cr-V alloys

    Science.gov (United States)

    Gao, M. C.; Suzuki, Y.; Schweiger, H.; Doǧan, Ö. N.; Hawk, J.; Widom, M.

    2013-02-01

    V is the only element in the periodic table that forms a complete solid solution with Cr and thus is particularly important in alloying strategy to ductilize Cr. This study combines first-principles density functional theory calculations and experiments to investigate the phase stability and elastic properties of Cr-V binary alloys. The cluster expansion study reveals the formation of various ordered compounds at low temperatures that were not previously known. These compounds become unstable due to the configurational entropy of bcc solid solution as the temperature is increased. The elastic constants of ordered and disordered compounds are calculated at both T = 0 K and finite temperatures. The overall trends in elastic properties are in agreement with measurements using the resonant ultrasound spectroscopy method. The calculations predict that addition of V to Cr decreases both the bulk modulus and the shear modulus, and enhances the Poisson’s ratio, in agreement with experiments. Decrease in the bulk modulus is correlated to decrease in the valence electron density and increase in the lattice constant. An enhanced Poisson’s ratio for bcc Cr-V alloys (compared to pure Cr) is associated with an increased density of states at the Fermi level. Furthermore, the difference charge density in the bonding region in the (110) slip plane is highest for pure Cr and decreases gradually as V is added. The present calculation also predicts a negative Cauchy pressure for pure Cr, and it becomes positive upon alloying with V. The intrinsic ductilizing effect from V may contribute, at least partially, to the experimentally observed ductilizing phenomenon in the literature.

  8. Phase stability and elastic properties of Cr-V alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gao, M C; Suzuki, Y; Schweiger, H; Doğan, Ö N; Hawk, J; Widom, M

    2013-01-23

    V is the only element in the periodic table that forms a complete solid solution with Cr and thus is particularly important in alloying strategy to ductilize Cr. This study combines first-principles density functional theory calculations and experiments to investigate the phase stability and elastic properties of Cr–V binary alloys. The cluster expansion study reveals the formation of various ordered compounds at low temperatures that were not previously known. These compounds become unstable due to the configurational entropy of bcc solid solution as the temperature is increased. The elastic constants of ordered and disordered compounds are calculated at both T = 0 K and finite temperatures. The overall trends in elastic properties are in agreement with measurements using the resonant ultrasound spectroscopy method. The calculations predict that addition of V to Cr decreases both the bulk modulus and the shear modulus, and enhances the Poisson’s ratio, in agreement with experiments. Decrease in the bulk modulus is correlated to decrease in the valence electron density and increase in the lattice constant. An enhanced Poisson’s ratio for bcc Cr–V alloys (compared to pure Cr) is associated with an increased density of states at the Fermi level. Furthermore, the difference charge density in the bonding region in the (110) slip plane is highest for pure Cr and decreases gradually as V is added. The present calculation also predicts a negative Cauchy pressure for pure Cr, and it becomes positive upon alloying with V. The intrinsic ductilizing effect from V may contribute, at least partially, to the experimentally observed ductilizing phenomenon in the literature.

  9. Energy gaps, effective masses and ionicity of AlxGa1-xSb ternary semiconductor alloys

    Science.gov (United States)

    Bouarissa, N.; Boucenna, M.; Saib, S.; Siddiqui, S. A.

    2017-12-01

    A pseudopotential calculation of the electronic structure of AlxGa1-xSb ternary alloys in the zinc-blende structure has been performed. The compositional dependence of energy gaps, electron and heavy hole effective masses and ionicity of the material system of interest have been examined and discussed. Special attention has been given to the effect of the alloy disorder on the direct (Γ-Γ) bandgap energy. It is found that all features of interest vary monotonically with increasing the Al concentration x. Besides, bandgap bowing parameters and extent of the direct-to-indirect bandgap transition have been determined. Our findings agree generally well with the data reported in the literature. Trends in ionicity are found to be consistent with the Phillips ionicity scale.

  10. Kondo effect and heavy fermions in Yb compounds

    International Nuclear Information System (INIS)

    Bonville, P.

    1987-01-01

    The Kondo properties of Yb dilute alloys and intermetallics have been investigated using Moessbauer spectroscopy on 170 Yb. In the dilute alloys AuYb and LaBe 13 Yb, the Kondo logarithmic anomaly of the impurity relaxation rate has been detected, and in the concentrated Yb compounds YbBe 13 , YbP and YbAs, and YbCuAl, the manifestations of the interplay between the Kondo effect and the magnetic ordering due to the RKKY interaction have been characterized

  11. The energetics of ordered intermetallic alloys (of the transition metals)

    International Nuclear Information System (INIS)

    Watson, R.E.; Weinert, M.; Davenport, J.W.; Fernando, G.W.; Bennett, L.H.

    1992-01-01

    The atomically ordered phases in ordered transition metal alloys are discussed. This chapter is divided into: physical parameters controlling phase stability (Hume-Rothery, structural maps, Miedema Hamiltonian), wave functions ampersand band theory, comment on entropy terms, cohesive energies (electron promotion energies, Hund's rule on orbital effects), structural energies/stabilities of elemental solids, total energies and atomic positions, charge transfer (Au alloys, charge tailing), heats of formation of ordered compounds

  12. Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1998-01-01

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

  13. Magnetic properties of magnetic glass-like carbon prepared from furan resin alloyed with magnetic fluid

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Kazumasa, E-mail: naka@sss.fukushima-u.ac.jp [Materials Science Area, Graduate School of Symbiotic Systems Science and Technology, Fukushima University, 1 Kanayagawa, Fukushima 960-1296 (Japan); Okuyama, Kyoko [Materials Science Area, Graduate School of Symbiotic Systems Science and Technology, Fukushima University, 1 Kanayagawa, Fukushima 960-1296 (Japan); Takase, Tsugiko [Institute of Environmental Radioactivity (IER), Fukushima University, 1 Kanayagawa, Fukushima 960-1296 (Japan)

    2017-03-01

    Magnetic glass-like carbons that were heat-treated at different temperatures or were filled with different magnetic nanoparticle contents were prepared from furan resin alloyed with magnetic fluid (MF) or Fe{sub 3}O{sub 4} powder in their liquid-phase states during mixing. Compared to the Fe{sub 3}O{sub 4} powder-alloyed carbon, the MF-alloyed carbon has highly dispersed the nanoparticles, and has the excellent saturation magnetization and coercivity. It is implied that saturation magnetizations are related to changes in the types of phases for the nanoparticles and the relative intensities of X-ray diffraction peaks for iron and iron-containing compounds in the carbons. Additionally, the coercivities are possibly affected by the size and crystallinity of the nanoparticles, the relative amounts of iron, and the existence of amorphous compounds on the carbon surfaces. - Highlights: • Magnetic glass-like carbons were prepared from furan resin alloyed with magnetic fluid. • The nanoparticles of MF-alloyed GLCs were highly dispersed. • MF-alloyed GLCs had excellent magnetic properties compared to powder-alloyed ones. • The magnetic properties changed with treatment temperature and nanoparticle content. • The changes in magnetic properties were investigated with XRD and FE-SEM.

  14. Real-time and online screening method for materials emitting volatile organic compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Changhyuk [University of Minnesota, Department of Mechanical Engineering (United States); Sul, Yong Tae [Hoseo University (Korea, Republic of); Pui, David Y. H., E-mail: dyhpui@umn.edu [University of Minnesota, Department of Mechanical Engineering (United States)

    2016-09-15

    In the semiconductor industry, volatile organic compounds (VOCs) in the cleanroom air work as airborne molecular contamination, which reduce the production yield of semiconductor chips by forming nanoparticles and haze on silicon wafers and photomasks under ultraviolet irradiation during photolithography processes. Even though VOCs in outdoor air are removed by gas filters, VOCs can be emitted from many kinds of materials used in cleanrooms, such as organic solvents and construction materials (e.g., adhesives, flame retardants and sealants), threatening the production of semiconductors. Therefore, finding new replacements that emit lower VOCs is now essential in the semiconductor industry. In this study, we developed a real-time and online method to screen materials for developing the replacements by converting VOCs into nanoparticles under soft X-ray irradiation. This screening method was applied to measure VOCs emitted from different kinds of organic solvents and adhesives. Our results showed good repeatability and high sensitivity for VOCs, which come from aromatic compounds, some alcohols and all tested adhesives (Super glue and cleanroom-use adhesives). In addition, the overall trend of measured VOCs from cleanroom-use adhesives was well matched with those measured by a commercial thermal desorption–gas chromatography–mass spectrometry, which is a widely used off-line method for analyzing VOCs. Based on the results, this screening method can help accelerate the developing process for reducing VOCs in cleanrooms.

  15. Phase composition of iron-rich R-Fe-Si (R=Dy, Ho, Er) alloys

    International Nuclear Information System (INIS)

    Ivanova, G.V.; Makarova, G.M.; Shcherbakova, E.V.; Belozerov, E.V.

    2005-01-01

    Phase composition is studied in iron-rich alloys of R-Fe-Si (R=Dy, Ho, Er). In the as-cast state R 2 (Fe, Si) 17 of type Th 2 Ni 17 and R(Fe, Si) 12 compounds are observed; in the alloys of rated composition of R(Fe 0.85 Si 0.15 ) 8.5 (R=Dy, Er) a compound R 2 (Fe, Si) 17 of Th 2 Zn 17 -type is revealed as well. The annealing at 1273 K results in formation of Dy 3 (Fe, Si) 29 and also the compounds with the presumed composition of Dy 4 (Fe, Si) 41 and Ho 4 (Fe, Si) 41 . As this takes place the alloys contain a transition structure as well that represents a set of small-sized areas with various type short-range order in mutual displacement of Fe-Fe(Si) dumpbell chains. The process of phase formation at 1273 K is faced with difficulties. Even the annealing for 1000 h does not result in the state of equilibrium [ru

  16. Proceedings of the European Meeting on Positron Studies of Defects

    International Nuclear Information System (INIS)

    1987-01-01

    The meeting dealt with both theoretical and experimental aspects of positron studies of defects using conventional and novel positron techniques. The subjects are indicated in the following headings: (1) theory of positrons in imperfect solids, (2) vacancies in metals and alloys, (3) dislocation and deformation effects, (4) amorphous alloys and fine-grained materials, (5) phase transitions, (6) precipitation phenomena, (7) gas impurity-defect interaction and irradiation effects, (8) defects in elemental semiconductors, (9) defects in compound semiconductors, (10) slow positron studies of defects, (11) defects in oxides and halides, (12) defects in molecular solids, and (13) advances in experimental techniques and data treatment. Althogether 141 contributions (invited plenary lectures, short lectures, and posters) are presented as titles with abstracts. Most of them are in INIS scope and are processed individually for the database

  17. Effect of micro alloying elements on the interfacial reactions between molten aluminum alloy and tool steel

    International Nuclear Information System (INIS)

    Nazari, K.A.; Shabestari, S.G.

    2009-01-01

    The morphology and growth kinetics of intermetallic compounds that are formed in the interface of H13 tool steel and A380 molten aluminum has been investigated through immersion experiments. The effect of addition of micro alloying elements to the melt on the formation and thickness of intermetallic layer was also studied. Microstructural investigation showed that three intermetallic layers formed through the liquid-solid reaction during immersion of steel samples in the liquid aluminum at a temperature of 680 deg. C for the duration time of 2 min to 2.5 h. These intermetallic compounds are Al 8 Fe 2 Si, Al 5 FeSi and Al 12 Fe 5 Si. The effect of nitride coating of the surface of H13 steel on the growth of intermetallic phases has also been studied. Micro alloying elements such as strontium and titanium have been used in the melt and their effects on the morphology of intermetallic compound and their growth rate have been investigated by the immersion experiments at the temperature of 680 deg. C for the time of 0.5-2.5 h. The results showed that two layers of Al 8 Fe 2 Si and Al 5 FeSi formed at the interface and Al 12 Fe 5 Si layer was not observed. Nitride coating decreased the overall thickness of the intermetallic layer about 50% after immersion time of 0.5 h. Addition of micro alloying elements such as Sr (0.05 wt%) and Ti (0.2 wt%) to the melt decreased the total thickness of the intermetallic layer about 31% after immersion of steel for 0.5 h in the melt. Both nitride coating and addition of strontium (0.05 wt%) and titanium (0.2 wt%) micro alloying elements to the melt had the most influence on decreasing the overall thickness of the intermetallic layer. The thickness of the intermetallic layer decreased about 60% after immersion of steel for 2.5 h in the aluminum melt. The experimental results clearly indicate the beneficial effect of strontium on the kinetics of the formation and growth of the intermetallic layers.

  18. Cathode-Control Alloying at an Au-ZnSe Nanowire Contact via in Situ Joule Heating

    International Nuclear Information System (INIS)

    Zeng Ya-Ping; Qu Bai-Hua; Yu Hong-Chun; Wang Yan-Guo

    2012-01-01

    Controllable interfacial alloying is achieved at a Au-ZnSe nanowire (M-S) contact via in situ Joule heating inside transmission electron microscopy (TEM). TEM inspection reveals that the Au electrode is locally molten at the M-S contact and the tip of the ZnSe nanowire is covered by the Au melting. Experimental evidences confirm that the alloying at the reversely biased M-S contact is due to the high resistance of the Schottky barrier at this M-S contact, coincident to cathode-control mode. Consequently, in situ Joule heating can be an effective method to improve the performance of nanoelectronics based on a metal-semiconductor-metal nanostructure. (cross-disciplinary physics and related areas of science and technology)

  19. Phase transitions in solids under high pressure

    CERN Document Server

    Blank, Vladimir Davydovich

    2013-01-01

    Phase equilibria and kinetics of phase transformations under high pressureEquipment and methods for the study of phase transformations in solids at high pressuresPhase transformations of carbon and boron nitride at high pressure and deformation under pressurePhase transitions in Si and Ge at high pressure and deformation under pressurePolymorphic α-ω transformation in titanium, zirconium and zirconium-titanium alloys Phase transformations in iron and its alloys at high pressure Phase transformations in gallium and ceriumOn the possible polymorphic transformations in transition metals under pressurePressure-induced polymorphic transformations in АIBVII compoundsPhase transformations in AIIBVI and AIIIBV semiconductor compoundsEffect of pressure on the kinetics of phase transformations in iron alloysTransformations during deformation at high pressure Effects due to phase transformations at high pressureKinetics and hysteresis in high-temperature polymorphic transformations under pressureHysteresis and kineti...

  20. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    CERN Multimedia

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  1. Evaluation of interfacial microstructures in dissimilar joints of aluminum alloys to steel using nanoindentation technique

    International Nuclear Information System (INIS)

    Ogura, Tomo; Hirose, Akio; Saito, Yuichi; Ueda, Keisuke

    2009-01-01

    The characteristics of interfacial microstructures with additional elements in dissimilar 6000 system aluminum/steel joints were basically evaluated using tensile test, EPMA, TEM and nanoindentation. For Si (and Cu)-added alloy (S1 and SC), EPMA analysis showed that Si (and Cu) was enrichment in the reaction layers, which were formed during diffusion bonding. SAED pattern clarified that the reaction compounds at the interface changed from AlFe intermetalic compounds to AlFeSi intermetalic compounds by Si addition. Nanoindentation technique was successfully applied to the interfacial microstructures to understand directly the nanoscopic mechanical properties in the interfacial microstructures. The hardness and Young's modulus of Al 3 Fe intermetalic compounds was lower than those of Al 2 Fe 5 intermetalic compounds. Moreover, the hardness and Young's modulus of AlFeSi(Cu) compounds were lower than those of Al 3 Fe, indicating that the crystal system changed from orthorhombic structure to cubic structure. Joint strength of SC/steel joints was higher than that of the aluminum alloy with no additional element (Base)/ steel joint, indicating that interfacial microstructure was modified by the addition of Si and Cu to the 6000 system aluminum alloy. These results suggest that the nanoscopic mechanical properties at the interface microstructures affect greatly the macroscopic deformation behavior of the aluminum /steel dissimilar joints.

  2. Studies of optical properties and applications of some mixed ternary semiconductors

    International Nuclear Information System (INIS)

    Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

    1989-01-01

    Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

  3. Effects of Al content on structure and mechanical properties of hot-rolled ZrTiAlV alloys

    International Nuclear Information System (INIS)

    Liang, S.X.; Yin, L.X.; Che, H.W.; Jing, R.; Zhou, Y.K.; Ma, M.Z.; Liu, R.P.

    2013-01-01

    Highlights: • Phase structure is greatly dependent on the Al content. • Intermetallic compound will precipitates while Al content is over 6.9 wt%. • Equiaxed α-phase grains present in the hot-rolled alloy with 6.9 wt% Al. • Alloys with Al content from 3.3 wt% to 5.6 wt% have good mechanical properties. - Abstract: Zirconium alloys show attractive properties for astronautic applications where the most important factors are anti-irradiation, corrosion resistance, anti-oxidant, very good strength-to-weight ratio. The effects of Al content (2.2–6.9 wt%) on structure and mechanical properties of the hot-rolled ZrTiAlV alloy samples were investigated in this study. Each sample of the hot-rolled ZrTiAlV alloys with Al contents from 2.2 wt% to 5.6 wt% is composed of the α phase and β phase, meanwhile, the relative content of the α phase increased with the Al content. However, the (ZrTi) 3 Al intermetallic compound was observed as the Al content increased to 6.9 wt%. Changes of phase compositions and structure with Al content distinctly affected mechanical properties of ZrTiAlV alloys. Yield strength of the alloy with 2.2 wt% Al is below 200 MPa. As Al content increased to 5.6 wt%, the yield strength, tensile strength and elongation of the examined alloy are 1088 MPa, 1256 MPa and 8%, respectively. As Al content further increased to 6.9 wt%, a rapid decrease in ductility was observed as soon as the (ZrTi) 3 Al intermetallic compound precipitated. Results show that the ZrTiAlV alloys with Al contents between 3.3 wt% and 5.6 wt% have excellent mechanical properties

  4. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  5. Effect of Trace Be and Sc Additions on the Mechanical Properties of A357 Alloys

    Directory of Open Access Journals (Sweden)

    Yu-Chih Tzeng

    2018-03-01

    Full Text Available The effect of the addition of Be and Sc on the microstructure and mechanical properties of A357 alloy were systematically investigated. The results show that the addition of small amounts of Be and Sc could change the acicular structure of iron-bearing intermetallic compounds to harmless compact Al-Fe-Si and Sc-Fe iron-bearing intermetallic compounds. Compact iron-bearing intermetallic compounds could improve fluidity, causing a reduction in interdendritic shrinkage during solidification. The addition of 0.05 wt % Be enhanced the quality index of the A357 alloy by 11% and increased the notch-yield ratio of fracture toughness by 4.5%. In contrast, the addition of 0.05 wt % Sc increased the quality index and the notch to yield ratio of fracture toughness up to 17% and 9%, respectively. Therefore, the microstructure and mechanical properties of the A357 alloy could be improved by substituting Be with Sc.

  6. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  7. Structural, optical and vibrational studies of Na{sup +} doped Cd{sub 0.8}Zn{sub 0.2}S semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yellaiah, G., E-mail: johngolluri@yahoo.com; Hadasa, K.; Nagabhushanam, M., E-mail: mamidala_nb@yahoo.com

    2013-12-25

    Graphical abstract: FTIR spectra of Cd{sub 0.8}Zn{sub 0.2}S: N{sub x} (x = 0.2 mol%). Highlights: •The energy band gaps of Cd{sub 0.8}Zn{sub 02}S: Nasamples were estimated. •Density and porosity percentages were calculated. •From the FTIR study CdS and ZnS stretching bonds were detected. -- Abstract: Cd{sub 0.8}Zn{sub 0.2}S semiconductor powders doped with different amounts of sodium have been synthesized by controlled co-precipitation technique. X-ray diffraction (XRD), Scanning electron microscope (SEM), Optical absorption and Fourier transform infrared spectroscope (FTIR) studies have been done on all these samples. XRD studies have revealed that the samples are polycrystalline with an average crystallite size ranging from 29 to 55 nm and they crystallize in the hexagonal form with wurtzite structure. The optical measurements revealed that the samples possess direct band gap and the band gap increases with an increase in the dopant concentration. The vibrational modes of Cd–S and Zn–S were obtained from FTIR studies and found to be at 812–618 cm{sup −1} respectively. Experimental and theoretical (XRD) densities were calculated and analyzed. Density from XRD and porosity in percentage varied from 92% to 94% and 5% to 8% respectively. The elemental analysis of the compounds was done by energy dispersive spectroscopy (EDS) and found that the cadmium, zinc, sulphur and sodium elements were present in the compound as per the composition taken. From the theoretical estimations it is understood that the dopant (Na) occupies the interstitial of CdZnS.

  8. Ion-beam modification of properties of metals and alloys

    International Nuclear Information System (INIS)

    Khodasevich, V.V.; Uglov, V.V.; Ponaryadov, V.V.; Zhukova, S.I.

    2002-01-01

    Physical fundaments for ion-beam modification and plasma-vacuum synthesis of new types of coatings and compounds in technically important metals and alloys were development as well as corresponding installation and technologies were created. (authors)

  9. Spectral and Spatial Coherent Emission of Thermal Radiation from Metal-Semiconductor Nanostructures

    Science.gov (United States)

    2012-03-01

    in hand, the pattern would be imprinted into a slave medium such as a thermoplastic, like poly(methyl methacrylate) or PMMA for short. Thermoset ...Chong, "Fabrication of nanostructures with laser interference lithography," Journal of Alloys and Compounds, vol. 449, pp. 261-264, 2008. [68] D

  10. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  11. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  12. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Science.gov (United States)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  13. Topological states in a two-dimensional metal alloy in Si surface: BiAg/Si(111)-4 ×4 surface

    Science.gov (United States)

    Zhang, Xiaoming; Cui, Bin; Zhao, Mingwen; Liu, Feng

    2018-02-01

    A bridging topological state with a conventional semiconductor platform offers an attractive route towards future spintronics and quantum device applications. Here, based on first-principles and tight-binding calculations, we demonstrate the existence of topological states hosted by a two-dimensional (2D) metal alloy in a Si surface, the BiAg/Si(111)-4 ×4 surface, which has already been synthesized experimentally. It exhibits a topological insulating state with an energy gap of 71 meV (˜819 K ) above the Fermi level and a topological metallic state with quasiquantized conductance below the Fermi level. The underlying mechanism leading to the formation of such nontrivial states is revealed by analysis of the "charge-transfer" and "orbital-filtering" effect of the Si substrate. A minimal effective tight-binding model is employed to reveal the formation mechanism of the topological states. Our finding opens opportunities to detect topological states and measure its quantized conductance in a large family of 2D surface metal alloys, which have been or are to be grown on semiconductor substrates.

  14. Preparations and properties of anti-corrosion additives of water-soluble metal working fluids for aluminum alloy materials.

    Science.gov (United States)

    Watanabe, Shoji

    2008-01-01

    This short review describes various types of anti-corrosion additives of water-soluble metal working fluids for aluminum alloy materials. It is concerned with synthetic additives classified according to their functional groups; silicone compounds, carboxylic acids and dibasic acids, esters, Diels-Alder adducts, various polymers, nitrogen compounds, phosphoric esters, phosphonic acids, and others. Testing methods for water-soluble metal working fluids for aluminum alloy materials are described for a practical application in a laboratory.

  15. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  16. Electroless synthesis of 3 nm wide alloy nanowires inside Tobacco mosaic virus

    International Nuclear Information System (INIS)

    Balci, Sinan; Kern, Klaus; Bittner, Alexander M; Hahn, Kersten; Kopold, Peter; Kadri, Anan; Wege, Christina

    2012-01-01

    We show that 3 nm wide cobalt–iron alloy nanowires can be synthesized by simple wet chemical electroless deposition inside tubular Tobacco mosaic virus particles. The method is based on adsorption of Pd(II) ions, formation of a Pd catalyst, and autocatalytic deposition of the alloy from dissolved metal salts, reduced by a borane compound. Extensive energy-filtering TEM investigations at the nanoscale revealed that the synthesized wires are alloys of Co, Fe, and Ni. We confirmed by high-resolution TEM that our alloy nanowires are at least partially crystalline, which is compatible with typical Co-rich alloys. Ni traces bestow higher stability, presumably against corrosion, as also known from bulk CoFe. Alloy nanowires, as small as the ones presented here, might be used for a variety of applications including high density data storage, imaging, sensing, and even drug delivery. (paper)

  17. Synthesis of Perylene Imide Diones as Platforms for the Development of Pyrazine Based Organic Semiconductors.

    Science.gov (United States)

    de Echegaray, Paula; Mancheño, María J; Arrechea-Marcos, Iratxe; Juárez, Rafael; López-Espejo, Guzmán; López Navarrete, J Teodomiro; Ramos, María Mar; Seoane, Carlos; Ortiz, Rocío Ponce; Segura, José L

    2016-11-18

    There is a great interest in peryleneimide (PI)-containing compounds given their unique combination of good electron accepting ability, high abosorption in the visible region, and outstanding chemical, thermal, and photochemical stabilities. Thus, herein we report the synthesis of perylene imide derivatives endowed with a 1,2-diketone functionality (PIDs) as efficient intermediates to easily access peryleneimide (PI)-containing organic semiconductors with enhanced absorption cross-section for the design of tunable semiconductor organic materials. Three processable organic molecular semiconductors containing thiophene and terthiophene moieties, PITa, PITb, and PITT, have been prepared from the novel PIDs. The tendency of these semiconductors for molecular aggregation have been investigated by NMR spectroscopy and supported by quantum chemical calculations. 2D NMR experiments and theoretical calculations point to an antiparallel π-stacking interaction as the most stable conformation in the aggregates. Investigation of the optical and electrochemical properties of the materials is also reported and analyzed in combination with DFT calculations. Although the derivatives presented here show modest electron mobilities of ∼10 -4 cm 2 V -1 s -1 , these preliminary studies of their performance in organic field effect transistors (OFETs) indicate the potential of these new building blocks as n-type semiconductors.

  18. Heavy ions amorphous semiconductors irradiation study

    International Nuclear Information System (INIS)

    Benmalek, M.

    1978-01-01

    The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

  19. Quasiparticle semiconductor band structures including spin-orbit interactions.

    Science.gov (United States)

    Malone, Brad D; Cohen, Marvin L

    2013-03-13

    We present first-principles calculations of the quasiparticle band structure of the group IV materials Si and Ge and the group III-V compound semiconductors AlP, AlAs, AlSb, InP, InAs, InSb, GaP, GaAs and GaSb. Calculations are performed using the plane wave pseudopotential method and the 'one-shot' GW method, i.e. G(0)W(0). Quasiparticle band structures, augmented with the effects of spin-orbit, are obtained via a Wannier interpolation of the obtained quasiparticle energies and calculated spin-orbit matrix. Our calculations explicitly treat the shallow semicore states of In and Ga, which are known to be important in the description of the electronic properties, as valence states in the quasiparticle calculation. Our calculated quasiparticle energies, combining both the ab initio evaluation of the electron self-energy and the vector part of the pseudopotential representing the spin-orbit effects, are in generally very good agreement with experimental values. These calculations illustrate the predictive power of the methodology as applied to group IV and III-V semiconductors.

  20. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  1. Electrical Resistance Alloys and Low-Expansion Alloys

    DEFF Research Database (Denmark)

    Kjer, Torben

    1996-01-01

    The article gives an overview of electrical resistance alloys and alloys with low thermal expansion. The electrical resistance alloys comprise resistance alloys, heating alloys and thermostat alloys. The low expansion alloys comprise alloys with very low expansion coefficients, alloys with very low...... thermoelastic coefficients and age hardenable low expansion alloys....

  2. Study of radiation defects by in-situ measurements of the Hall effect in narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Favre, J.

    1990-01-01

    Semiconducting compounds of II-VI, III-V and IV-VI groups were irradiated in liquid hydrogen by high energy (0.7 to 2.7 MeV) electrons. The Hall coefficient and resistivity variations were measured in situ during irradiation. The doping by irradiation induced defects is of p-type in III-V group compounds, while n-type doping occurs in II-VI and IV-VI group materials. A semiconductor to insulator or reverse transition was observed under irradiation when the chemical potential crossed the band edges. In IV-VI group compounds the two successive transitions take place in initially p-type samples. A metastable behaviour, characteristic to strong compensation, appears in the vicinity of those semiconductor - insulator transitions in IV-VI compounds. The slope of free carrier concentration vs. fluence variation was analyzed. It was compared to defect creation rates, calculated in the framework of a cascade model. The charge state of created defects was deduced in this way. - In IV-VI group compounds, the presence of localized levels degenerated with the conduction band and, in PbTe, of additional defect associated levels in the forbidden gap, was demonstrated. Those results are consistent with the saturation of electron concentration increase at high fluence as well as with the analysis of annealing experiments. - In Hg 1-x Cd x Te compounds, the analysis of electron concentration versus fluence increase indicates that only mercury Frenkel pairs are electrically active. The variation with cadmium content of the defect associated level energy was deduced from the saturation values of the electron concentration [fr

  3. Quadrupole interaction in ternary chalcopyrite semiconductors experiments and theory

    CERN Document Server

    Dietrich, M; Degering, D; Deicher, M; Kortus, J; Magerle, R; Möller, A; Samokhvalov, V; Unterricker, S; Vianden, R

    2000-01-01

    Electric field gradients have been measured at substitutional lattice sites in ternary semiconductors using perturbed gamma - gamma angular correlation spectroscopy. The experimental results for A/sup I/B/sup III/C/sub 2//sup VI/ chalcopyrite structure compounds and Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ defect chalcopyrites are compared with ab-initio calculations. The latter were carried out with the WIEN code that uses the full potential linearized augmented plane wave method within a density functional theory. The agreement between experiment and theory is in most cases very good. Furthermore, the anion displacements in AgGaX/sub 2/- compounds (X: S, Se, Te) have been determined theoretically by determining the minimum of the total energy of the electrons in an elementary cell. (20 refs).

  4. Magnetic behaviour of new Ce compounds

    Energy Technology Data Exchange (ETDEWEB)

    Sampathkumaran, E V [Tata Inst. of Fundamental Research, Bombay (India); Mallik, R [Tata Inst. of Fundamental Research, Bombay (India)

    1996-07-01

    We report initial results of our investigation on the magnetic behaviour of some new Ce compounds. The compounds, CeIr{sub 2}B{sub 2}C and CeIr{sub 2}Ge{sub 2}, do not appear to exhibit bulk magnetic ordering down to 2 K. The alloys, Ce{sub 2}Pd{sub 2}In and Ce{sub 2}Cu{sub 2}In, order magnetically below 4 and 6 K, respectively, and a marginal change in the Pd(Cu)/In composition does not significantly influence the ordering temperatures. (orig.).

  5. Phase transition and hydrogen storage properties of Mg–Ga alloy

    International Nuclear Information System (INIS)

    Wu, Daifeng; Ouyang, Liuzhang; Wu, Cong; Wang, Hui; Liu, Jiangwen; Sun, Lixian; Zhu, Min

    2015-01-01

    Highlights: • A fully reversible transformation in Mg–Ga–H system with reduced dehydrogenation enthalpy is realized. • The mechanism of phase transformation in the de/hydrogenation of Mg–Ga alloy is revealed. • The de/hydrogenation process of Mg 5 Ga 2 compound is expressed as: Mg 5 Ga 2 + H 2 ↔ 2Mg 2 Ga + MgH 2 . - Abstract: Mg-based alloys are viewed as one of the most promising candidates for hydrogen storage; however, high desorption temperature and the sluggish kinetics of MgH 2 hinder their practical application. Alloying and changing the reaction pathway are effective methods to solve these issues. As the solid solubility of Ga in Mg is 5 wt% at 573 K, the preparation of a Mg(Ga) solid solution at relatively high temperatures was designed in this paper. The phase transition and hydrogen storage properties of the MgH 2 and Mg 5 Ga 2 composite (hereafter referred to as Mg–Ga alloy) were investigated by X-ray diffraction (XRD), pressure–composition-isotherm (PCI) measurements, and differential scanning calorimetry (DSC). The reversible hydrogen storage capacity of Mg–Ga alloy is 5.7 wt% H 2 . During the dehydrogenation process of Mg–Ga alloy, Mg 2 Ga reacts with MgH 2 , initially releasing H 2 and forming Mg 5 Ga 2 ; subsequently, MgH 2 decomposes into Mg with further release of H 2 . The phase transition mechanism of the Mg 5 Ga 2 compound during the dehydrogenation process was also investigated by using in situ XRD analysis. In addition, the dehydrogenation enthalpy and entropy changes, and the apparent activation energy were also calculated

  6. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  7. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  8. Nuclear quadrupole resonance of 93Nb in ternary phases on the bases of Nb3Al compound

    International Nuclear Information System (INIS)

    Matukhin, V.L.; Safin, I.A.; Shamraj, V.F.

    1980-01-01

    Results of investigations into concentration dependences of 93 Nb spectrum parameters of nuclear quadrupole resonance (n.g.r.) (frequencies of n.g.r. transitions, rates of nuclear spin - lattice relaxation R) in triple phases which appear as a result of Nb 3 Al compound alloying with Zr, Ga, Sn, are presented. Nb 3 Al alloying with gallium does not considerably change the R value (R-rate of nuclear spin - lattice relaxation, while alloying with zirconium decreases it to a noticeable extent. It is 30% less in the triple phase than in the Nb 3 Al compound. R alterations, frequency reduction in the 93 Nb n.q.r. spectrum and the decrease of constant of the quadrupole bond point to the alteration of the spatial electron distribution around a niobium atom during alloying [ru

  9. Study of plutonium and its alloys with III B elements

    International Nuclear Information System (INIS)

    Robert, Gregory

    2003-12-01

    The objective of this research thesis is to understand phenomena which intervene in the delta phase stabilisation of plutonium alloys, and to build phase diagrams for PuAl, PuGa, and PuIn. After a presentation of some properties of plutonium and of its compounds, the author presents the adopted approach: the 'ab initio' approach to the fundamental state based on the density functional theory (DFT). Then, a numerical method used within the framework of the DFT is developed, and results obtained by using the developed code are presented for the different studied materials (Al, Ga, In, Pu). A gradient correction is applied to the alloys by using the Generalised Gradient Approximation (GGA) with spin polarisation. It allows the determination of the formation energy of compounds. Hybridisation effects between plutonium and delta-generating elements (Al, Ga, In) are assessed. A statistic approach (cluster variation method, CVM) is used to assess the influence of the chemical order at short distance on the stability of the fcc solid solution, and to obtain theoretical binary alloy diagrams

  10. Hydrogen uptake characteristics of mechanically alloyed Ti-V-Ni

    International Nuclear Information System (INIS)

    Cauceglia, Dorian; Hampton, Michael D.; Lomness, Janice K.; Slattery, Darlene K.; Resan, Mirna

    2006-01-01

    It has been well established that hydrogen will react directly and reversibly with a large number of metals and alloys to form metallic hydrides. Extensive research has been done over the years to improve properties of these hydrogen purification and recovery media and in developing new compounds for this purpose. In the present study, the hydrogen uptake characteristics of mechanically alloyed titanium-vanadium-nickel have been studied. Thermal and composition data were obtained for the Ti-V-Ni system prepared by mechanical alloying at a ball-to-powder mass ratio of 10:1. It was found that this material would absorb up to approximately 1.0 wt% hydrogen at near ambient temperature and ambient pressure of hydrogen

  11. Microstructural characterizations and mechanical properties in underwater friction stir welding of aluminum and magnesium dissimilar alloys

    International Nuclear Information System (INIS)

    Zhao, Yong; Lu, Zhengping; Yan, Keng; Huang, Linzhao

    2015-01-01

    Highlights: • Aluminum and magnesium alloys were joined by underwater friction stir welding. • Underwater FSW was conducted to improve properties of joint with lower heat input. • Microstructures and mechanical properties of dissimilar joint were investigated. • Intermetallic compounds developed in the fracture interface were analyzed. • Fracture features of the tensile samples were analyzed. - Abstract: Formation of intermetallic compounds in the stir zone of dissimilar welds affects the mechanical properties of the joints significantly. In order to reduce heat input and control the amount and morphological characteristics of brittle intermetallic compounds underwater friction stir welding of 6013 Al alloy and AZ31 Mg alloy was carried out. Microstructures, mechanical properties, elements distribution, and the fracture surface of the joints were analyzed by optical microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy, etc. The result shows that sound dissimilar joint with good mechanical properties can be obtained by underwater friction stir welding. Al and Mg alloys were stirred together and undergone the process of recrystallization, forming complex intercalated flow patterns in the stir zone. Tensile strength of the dissimilar joint was up to 152.3 MPa. Maximum hardness (142HV) appeared in the middle of the centerline of the specimen. Intermetallic compounds layer consisting of Al 3 Mg 2 and Mg 17 Al 12 formed in the Al/Mg interface and resulted in the fracture of the joint

  12. Transport Imaging of Spatial Distribution of Mobility-Lifetime (Micro Tau) Product in Bulk Semiconductors for Nuclear Radiation Detection

    Science.gov (United States)

    2012-06-01

    reproducibility for currents of 3×10-10 A, and 6×10-10 A. An operating current of 1×10-10 A shows higher variations in the distribution beginning at...York: John Wiley & Sons, 2000. [21] A. Owens and A. Peacock , “Compound semiconductor radiation detectors,” Nucl. Instr. and Meth. A, vol. 531, pp. 18...A. G. Kozorezov, J. K. Wigmore, A. Owens, R. den Hartog, A. Peacock , and H. A. Al-Jawari, “Resolution degradation of semiconductor detectors due to

  13. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  14. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  15. Electronic structure and pitting behavior of 3003 aluminum alloy passivated under various conditions

    International Nuclear Information System (INIS)

    Liu, Y.; Meng, G.Z.; Cheng, Y.F.

    2009-01-01

    Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na 2 SO 4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the presence of chloride ions. There is the strongest capability for the air-passivated Al alloy 3003 to repassivate, and the weakest repassivating capability for Al alloy 3003 passivated in chloride-containing solution. The resistance of the passivated Al alloy 3003 to pitting corrosion is dependent on the competitive effects of pitting (breakdown of passive film) and repassivation (repair of passive film). According to the differences between corrosion potential and potential of zero charge, passive film formed in air has the strongest capability to adsorb chloride ions, while the film formed in chloride-containing solution the least. Chloride ions causing pitting of passivated Al alloy 3003 in air and in chloride-free solution come from the test solution, while those resulting in pitting of passivated Al alloy 3003 in chloride-containing solution mainly exist in the film during film-forming stage.

  16. Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bainsla, Lakhan, E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in; Suresh, K. G., E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in [Magnetic Materials Lab, Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2016-09-15

    Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (T{sub C}) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X{sub 2}YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L2{sub 1} structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX′YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A special class of HMF materials identified recently is known as spin gapless semiconductors (SGS). The difference in this case, compared with HMFs, is that the density of states for one spin band is just zero at the Fermi level, while the other has a gap as in the case of HMFs. Some of the reported SGS materials belong to EQHAs family. This review is dedicated to almost all reported materials belonging to EQHAs family. The electronic structure and hence the physical properties of Heusler alloys strongly depend on the degree of structural order and distribution of the atoms in the crystal lattice. A variety of experimental techniques has been used to probe the structural parameters and degree of order in these alloys. Their magnetic properties have been investigated using the conventional methods, while the spin polarization has been probed by point contact Andreev reflection technique. The experimentally obtained values of saturation magnetization are

  17. On the epoxy moulding compound aging effect on package reliability

    NARCIS (Netherlands)

    Noijen, S.P.M.; Engelen, R.A.B.; Martens, J.; Opran, A.; Sluis, van der O.

    2009-01-01

    Most semi-conductor devices are encapsulated by epoxy moulding compound (EMC) material. Even after curing at the prescribed temperature and time in accordance with the supplier's curing specifications often the product is not yet 100% fully cured. As a consequence, the curing process of a product

  18. Defect interactions in Sn1−xGex random alloys

    KAUST Repository

    Chroneos, Alexander; Bracht, H.; Grimes, R. W.; Jiang, C.; Schwingenschlö gl, Udo

    2009-01-01

    Sn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.

  19. Defect interactions in Sn1−xGex random alloys

    KAUST Repository

    Chroneos, Alexander

    2009-06-23

    Sn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.

  20. Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

    Energy Technology Data Exchange (ETDEWEB)

    Byrne, C., E-mail: conor.byrne2@mail.dcu.ie [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Brady, A.; Walsh, L.; McCoy, A.P.; Bogan, J. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McGlynn, E. [School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland); Rajani, K.V. [School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland)

    2016-01-29

    A copper–aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO{sub 2}/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO{sub 2} interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk. - Highlights: • CuAl alloy (90%:Al 10% wt) deposited and vacuum annealed • XPS and SIMS data show segregation of Al from the alloy bulk. • Chemical changes seen indicate the reduction of Cu oxide and growth of Al Oxide. • Electrical measurements indicate a chemical change at the metal/SiO{sub 2} interface. • All data consistent with Cu diffusion barrier layer formed.

  1. Alloying of Yb-Cu and Yb-Ag utilizing liquid ammonia metal solutions of ytterbium

    International Nuclear Information System (INIS)

    Imamura, H.; Yoshimura, T.; Sakata, Y.

    2003-01-01

    In the course of the studies on preparation of novel compounds using the dissolution of Eu or Yb metals in liquid ammonia, the formation of Yb-Cu and Yb-Ag intermetallic films has been found. When Cu or Ag metal powders were placed in a reactor containing a solution of Yb metal in liquid ammonia, the dissolved Yb readily react with the Cu or Ag metal particles to form surface alloy compounds. X-ray diffraction of Yb-Cu showed that upon thermal treatment above 673 K, the Yb metal deposited on the Cu particles reacted together to be transformed into the YbCu 6.5 intermetallic compound. A characteristic endothermic peak at 749 K, due to alloying of Yb-Cu, was observed by the differential scanning calorimeter measurements. By use of the high reactivity of liquid ammonia metal solutions of ytterbium, it was found that the ytterbium intermetallic films were readily formed under mild conditions. Yb-Cu and Yb-Ag exhibited enhanced catalytic activity for the hydrogenation of ethene as a result of alloying

  2. Phases in U-Si alloys

    International Nuclear Information System (INIS)

    Domagala, R.F.

    1986-09-01

    The binary (two component) U-Si system contains a total of seven ''compounds.'' The most U-rich compounds are of interest to the RERTR community because they are now being employed as fuels in research and test reactors. The nomenclature used in describing these fuels and the metallurgical significance of the notations recorded may have different meanings to people from different technical backgrounds. This paper is a succinct exploration of the principles of phase equilibria and the realities of commerical fabrication as applied to U-Si alloys. It is an attempt to record in referenceable and retrievable form information of value to the continued development, application and understanding of silicide fuels

  3. Analysis of uranium and of some of its compounds and alloys. Copper spectrophotometric determination

    International Nuclear Information System (INIS)

    Copper determination in uranium, uranium oxides (UO 2 , UO 3 , U 3 O 8 ), ammonium diuranate, U-Al-Fe alloy (700 ppm Al and 300 ppm Fe) and U-Mo alloy (1.1 percent Mo) by acid dissolution reduction of copper by hydroxylamine hydrochloride and formation of a complex with diquinolyle-2,2' amyl alcohol (pH value 6 to 7) and spectrophotometry at 550 nm. The method is applicable for copper content between 5 to 40 ppm in respect of uranium contained in the material [fr

  4. Crystal structure of the quaternary compounds CuFe2AlSe4 and ...

    Indian Academy of Sciences (India)

    2014-05-29

    May 29, 2014 ... semiconductor compound families of the third-, fourth- and fifth-order derivatives of the .... showed single phases. The powder patterns were ... and tetragonal cells with similar magnitudes to the parent chalcopyrite structures,.

  5. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  6. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  7. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  8. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  9. Study on improved tribological properties by alloying copper to CP-Ti and Ti-6Al-4V alloy.

    Science.gov (United States)

    Wang, Song; Ma, Zheng; Liao, Zhenhua; Song, Jian; Yang, Ke; Liu, Weiqiang

    2015-12-01

    Copper alloying to titanium and its alloys is believed to show an antibacterial performance. However, the tribological properties of Cu alloyed titanium alloys were seldom studied. Ti-5Cu and Ti-6Al-4V-5Cu alloys were fabricated in the present study in order to further study the friction and wear properties of titanium alloys with Cu additive. The microstructure, composition and hardness were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM) and hardness tester. The tribological behaviors were tested with ZrO2 counterface in 25% bovine serum using a ball-on-disc tribo-tester. The results revealed that precipitations of Ti2Cu intermetallic compounds appeared in both Ti-5Cu and Ti-6Al-4V-5Cu alloys. The tribological results showed an improvement in friction and wear resistance for both Ti-5Cu and Ti-6Al-4V-5Cu alloys due to the precipitation of Ti2Cu. The results also indicated that both CP-Ti and Ti-5Cu behaved better wear resistance than Ti-6Al-4V and Ti-6Al-4V-5Cu due to different wear mechanisms when articulated with hard zirconia. Both CP-Ti and Ti-5Cu revealed dominant adhesive wear with secondary abrasive wear mechanism while both Ti-6Al-4V and Ti-6Al-4V-5Cu showed severe abrasive wear and cracks with secondary adhesive wear mechanism due to different surface hardness integrated by their microstructures and material types. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Mechanical properties of Mo-Si-B alloys fabricated by using core-shell powder with dispersion of yttria nanoparticles

    Science.gov (United States)

    Byun, Jong Min; Bang, Su-Ryong; Choi, Won June; Kim, Min Sang; Noh, Goo Won; Kim, Young Do

    2017-01-01

    In recent years, refractory materials with excellent high-temperature properties have been in the spotlight as a next generation's high-temperature materials. Among these, Mo-Si-B alloys composed of two intermetallic compound phases (Mo5SiB2 and Mo3Si) and a ductile α-Mo phase have shown an outstanding thermal properties. However, due to the brittleness of the intermetallic compound phases, Mo-Si-B alloys were restricted to apply for the structural materials. So, to enhance the mechanical properties of Mo-Si-B alloys, many efforts to add rare-earth oxide particles in the Mo-Si-B alloy were performed to induce the improvement of strength and fracture toughness. In this study, to investigate the effect of adding nano-sized Y2O3 particles in Mo-Si-B alloy, a core-shell powder consisting of intermetallic compound phases as the core and nano-sized α-Mo and Y2O3 particles surrounding the core was fabricated. Then pressureless sintering was carried out at 1400 °C for 3 h, and the mechanical properties of sintered bodies with different amounts of Y2O3 particles were evaluated by Vickers hardness and 3-point bending test. Vickers hardness was improved by dispersed Y2O3 particles in the Mo-Si-B alloy. Especially, Mo-3Si-1B-1.5Y2O3 alloy had the highest value, 589 Hv. The fracture toughness was measured using Mo-3Si-1B-1.5Y2O3 alloy and the value indicated as 13.5 MPa·√m.

  11. First-principle study of the structural, electronic, and optical properties of cubic InN{sub x}P{sub 1-x} ternary alloys under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Hattabi, I. [Ibn Khaldoun Univ. de Tiaret (Algeria). Lab. Synthese et Catalyse; Abdiche, A.; Riane, R. [Sidi-bel-Abbes Univ. (Algeria). Applied Materials Lab.; Moussa, R. [Sidi-bel-Abbes Univ. (Algeria). Physic Dept.; Hadji, K. [Ibn Khaldoun Univ. de Tiaret (Algeria). Science and Technology Dept.; Soyalp, F. [Yuezuencue Yil Univ., Van (Turkey). Dept. of Physics; Varshney, Dinesh [Devi Ahilya Univ., Indore (India). Materials Science Lab.; Syrotyuk, S.V. [National Univ. ' Lviv Polytechnic' , Lviv (Ukraine). Semiconductor Electronics Dept.; Khenata, R. [Mascara Univ. (Algeria). Lab. de Physique Quantique et de Modelisation Mathematique (LPQ3M)

    2016-07-01

    In this article, we present results of the first-principle study of the structural, electronic, and optical properties of the InN, InP binary compounds and their related ternary alloy InN{sub x}P{sub 1-x} in the zinc-blend (ZB) phase within a nonrelativistic full potential linearised augmented plan wave (FP-LAPW) method using Wien2k code based on the density functional theory (DFT). Different approximations of exchange-correlation energy were used for the calculation of the lattice constant, bulk modulus, and first-order pressure derivative of the bulk modulus. Whereas the lattice constant decreases with increasing nitride composition x. Our results present a good agreement with theoretical and experimental data. The electronic band structures calculated using Tran-Blaha-modified Becke-Johnson (TB-mBJ) approach present a direct band gap semiconductor character for InN{sub x}P{sub 1-x} compounds at different x values. The electronic properties were also calculated under hydrostatic pressure for (P=0.00, 5.00, 10.0, 15.0, 20.0, 25.0 GPa) where it is found that the InP compound change from direct to indirect band gap at the pressure P≥7.80 GPa. Furthermore, the pressure effect on the dielectric function and the refractive index was carried out. Results obtained in our calculations present a good agreement with available theoretical reports and experimental data.

  12. Effects of Boron-Incorporation in a V-Containing Zr-Based AB2 Metal Hydride Alloy

    Directory of Open Access Journals (Sweden)

    Shiuan Chang

    2017-11-01

    Full Text Available In this study, boron, a metalloid element commonly used in semiconductor applications, was added in a V-containing Zr-based AB2 metal hydride alloy. In general, as the boron content in the alloy increased, the high-rate dischargeability, surface exchange current, and double-layer capacitance first decreased and then increased whereas charge-transfer resistance and dot product of charge-transfer resistance and double-layer capacitance changed in the opposite direction. Electrochemical and gaseous phase characteristics of two boron-containing alloys, with the same boron content detected by the inductively coupled plasma optical emission spectrometer, showed significant variations in performances due to the difference in phase abundance of a newly formed tetragonal V3B2 phase. This new phase contributes to the increases in electrochemical high-rate dischargeability, surface exchange current, charge-transfer resistances at room, and low temperatures. However, the V3B2 phase does not contribute to the hydrogen storage capacities in either gaseous phase and electrochemical environment.

  13. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  14. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir; Nazir, Safdar; Shaukat, Ali; Reshak, A. H.

    2010-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results

  15. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  16. Microstructural investigation of as-cast uranium rich U–Zr alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yuting, E-mail: zhangyuting@caep.cn [Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan (China); School of Nuclear Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, Anhui (China); Wang, Xin [Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan (China); Zeng, Gang [Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, Sichuan (China); Wang, Hui [Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan (China); Jia, Jianping [Institute of Materials, China Academy of Engineering Physics, Jiangyou 621908, Sichuan (China); Sheng, Liusi [School of Nuclear Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, Anhui (China); Zhang, Pengcheng, E-mail: zpc113@sohu.com [Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, Sichuan (China)

    2016-04-01

    The present study evaluates the microstructure in as-cast uranium rich U–Zr alloys, an important subsystem of U–Pu–Zr ternary metallic nuclear reactor fuel, as a function of the Zr content, from 2wt.% to 15wt.%Zr. It has been previously suggested that the unique intermetallic compound δ phase in U–Zr alloys is only present in as-cast U–Zr alloys with a Zr content exceeding 10wt.%Zr. However, our analysis of transmission electron microscopy (TEM) data shows that the δ phase is common to all as-cast alloys studied in this work. Furthermore, specific coherent orientation relationship is found between the α and δ phases, consistent with previous findings, and a third variant is discovered in this paper. - Highlights: • Initially, lattice parameter of as-cast U–Zr alloys decrease with the increasing Zr content, and then increase. • XRD data show the presence of δ-UZr{sub 2} phase in as-cast U–Zr alloys with a Zr content of more than 8wt.% Zr. • Finding δ-UZr{sub 2} phase exists in all as-cast uranium rich U–Zr alloys, even for alloys with a lean Zr content. • Three kinds of preferential orientations of the δ phase grow.

  17. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  18. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  19. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  20. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  1. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    Science.gov (United States)

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  2. The Effects of Grain Refinement and Rare Earth Intermetallics on Mechanical Properties of As-Cast and Wrought Magnesium Alloys

    Science.gov (United States)

    Pourbahari, Bita; Mirzadeh, Hamed; Emamy, Massoud

    2018-03-01

    The effects of rare earth intermetallics and grain refinement by alloying and hot extrusion on the mechanical properties of Mg-Gd-Al-Zn alloys have been studied to elucidate some useful ways to enhance the mechanical properties of magnesium alloys. It was revealed that aluminum as an alloying element is a much better grain refining agent compared with gadolinium, but the simultaneous presence of Al and Gd can refine the as-cast grain size more efficiently. The presence of fine and widely dispersed rare earth intermetallics was found to be favorable to achieve finer recrystallized grains during hot deformation by extrusion. The presence of coarse dendritic structure in the GZ61 alloy, grain boundary eutectic containing Mg17Al12 phase in the AZ61 alloy, and rare earth intermetallics with unfavorable morphology in the Mg-4Gd-2Al-1Zn alloy was found to be detrimental to mechanical properties of the alloy in the as-cast condition. As a result, the microstructural refinement induced by hot extrusion process resulted in a significant enhancement in strength and ductility of the alloys. The presence of intermetallic compounds in the extruded Mg-4Gd-2Al-1Zn and Mg-2Gd-4Al-1Zn alloys deteriorated tensile properties, which was related to the fact that such intermetallic compounds act as stress risers and microvoid initiation sites.

  3. Production and properties of light-metal base amorphous alloys

    International Nuclear Information System (INIS)

    Inoue, Akihisa; Masumoto, Tsuyoshi

    1993-01-01

    Light-metal base alloys with high specific strength and good corrosion resistance were produced through amorphization of Al and Mg-based alloys. The amorphous phase is formed in rapidly solidified Al-TM-Ln and Mg-TM-Ln (TM=transition metal, Ln=lanthanide metal) alloys. The highest tensile strength (σ f ) reaches 1,330 MPa for the Al base and 830 MPa for the Mg base. Furthermore, the Mg-based alloys have a large glass-forming capacity which enables to produce an amorphous phase by a metallic mold casting method. The extrusion of the Al-based amorphous powders at temperatures above crystallization temperature caused the formation of high strength materials with finely mixed structure consisting of dispersed intermetallic compounds in an Al matrix. The highest values of σ f and fatigue limit are as high as 940 and 313 MPa, respectively, at room temperature and 520 and 165 MPa at 473 K. The extruded Al-Ni-Mm alloy has already been used as machine parts and subsequent further development as practical materials is expected by taking these advantages

  4. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  5. NATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures

    CERN Document Server

    Parkin, S; Dobson, P; Neave, J; Arrott, A

    1987-01-01

    This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growi...

  6. The Influence of Aluminum on the Microstructure and Hardness of Mg-5Si-7Sn Alloy

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2016-03-01

    Full Text Available Magnesium alloys due the low density and good mechanical properties are mainly used in the automotive and aerospace industry. In recent years, magnesium alloys are extensively developed for use in high temperatures (above 120°C. Among these alloys, magnesium alloys containing tin and silicon have large possibilities of application due to the formation of thermally stable intermetallic Mg2Sn and Mg2Si. In this paper the influence of aluminum and heat treatment on the on the microstructure and hardness of Mg-7Sn-5Si alloy is reported. It was found that the microstructure of Mg-7Sn-5Si alloy consist of α-Mg solid solution, Mg2Sn and Mg2Si compounds. Addition of 2 wt% of Al to Mg-7Sn-5Si alloy causes the formation of Al2Sn phase. Moreover, Al dissolves in the α-Mg solid solution. The solution heat-treatment of tested alloys at 500°C for 24 h causes the dissolve the Mg2Sn phase in the α-Mg matrix and spheroidization of Mg2Si compound. The Mg2Si primary crystals are stable at solution temperature. After ageing treatment the precipitation process of equilibrium Mg2Sn phase was found in both alloys. The addition of aluminum has a positive effect on the hardness of Mg-7Sn-5Si alloy. In case of Mg-5Si-7Sn-2Al alloy the highest hardness was obtained for sample aged for 148 h at 250°C (88 HV2, while in case of Al-free alloy the highest hardness is 70 HV for material aged for 148 h at 250°C.

  7. The novel eutectic microstructures of Si-Mn-P ternary alloy

    International Nuclear Information System (INIS)

    Wu Yaping; Liu Xiangfa

    2010-01-01

    The microstructures of Si-Mn-P alloy manufactured by the technique of combining phosphorus transportation and alloy melting were investigated using electron probe micro-analyzer (EPMA). The phase compositions were determined by energy spectrum and the varieties of eutectic morphologies were discussed. It is found that there is no ternary compound but Si, MnP and MnSi 1.75-x could appear when the Si-Mn-P alloy's composition is proper. Microstructure is greatly refined by rapid solidification technique and the amount of eutectic phases change with faster cooling rates. Moreover, primary Si or MnP are surrounded firstly by the binary eutectic (Si + MnP) and then the ternary eutectic (Si + MnSi 1.75-x + MnP) which also exhibit binary structures due to divorced eutectic determined by the particularity of some Si-Mn-P alloys.

  8. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  9. CPA theory of the magnetization in rare earth transition metal alloys

    International Nuclear Information System (INIS)

    Szpunar, B.; Lindgaard, P.A.

    1976-11-01

    Calculations were made of the magnetic moment per atom of the transition metal and the rare earth metal in the intermetallic compounds, Gdsub(1-x)Nisub(x), Gdsub(1-x)Fesub(x), Gdsub(1-x)Cosub(x), and Ysub(1-x)Cosub(x). A simple model of the disordered alloy consisting of spins localized on the rare earth atoms and interacting with a narrow d-band is considered. The magnetic moment of the alloy at zero temperature is calculated within the molecular field and Hartree-Fock approximations. Disorder is treated in the coherent potential approximation. Results are in good agreement with the experimental data obtained for the crystalline and amorphous intermetallic compounds. It is shown that the temperature dependence of the magnetic moments and Curie and ferrimagnetic compensation temperatures can be accounted for by a simple model assuming a RKKY interaction between the rare-earth moments and the transition metal pseudo spin. The interaction is mediated by an effective alloy medium calculated using the CPA theory and elliptic densities of states. (Auth.)

  10. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  11. n-Channel semiconductor materials design for organic complementary circuits.

    Science.gov (United States)

    Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

    2011-07-19

    Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an

  12. Annealed coated air-stable cobalt--rare earth alloy particles

    International Nuclear Information System (INIS)

    Smeggil, J.C.; Charles, R.J.

    1975-01-01

    A process is described for producing novel air-stable coated particles of a magnetic transition metal-rare earth alloy. An organometallic compound which decomposes at a temperature below 500 0 C is heated to produce a metal vapor which is contacted with particles of a transition metal-rare earth alloy to deposit a metal coating thereon. The coated particles are heated at a temperature ranging from 50 to 200 0 C for a period of time sufficient to increase their intrinsic coercive force by at least 10 percent. (U.S.)

  13. Electronic structure of disordered binary alloys with short range correlation in Bethe lattice

    International Nuclear Information System (INIS)

    Moreno, I.F.

    1987-01-01

    The determination of the electronic structure of a disordered material along the tight-binding model when applied to a Bethe lattice. The diagonal as well as off-diagonal disorder, are considered. The coordination number on the Bethe is fixed lattice to four (Z=4) that occurs in most compound semiconductors. The main proposal was to study the conditions under which a relatively simple model of a disordered material, i.e, a binary alloy, could account for the basic properties of transport or more specifically for the electronic states in such systems. By using a parametrization of the pair probability the behaviour of the electronic density of states (DOS) for different values of the short range order parameter, σ, which makes possible to treat the segregated, random and alternating cases, was analysed. In solving the problem via the Green function technique in the Wannier representation a linear chain of atoms was considered and using the solution of such a 1-D system the problem of the Bethe lattice which is constructed using such renormalized chains as elements, was solved. The results indicate that the obtained DOS are strongly dependent on the correlation assumed for the occupancy in the lattice. (author) [pt

  14. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

    Science.gov (United States)

    Hoshino, Tomoki; Mori, Nobuya

    2018-04-01

    InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

  15. Role of 3d electrons in formation of ionic-covalent bonds in II-VI based ternary compounds

    International Nuclear Information System (INIS)

    Lawniczak-Jablonska, K.; Iwanowski, R.J.; Perera, R.C.C.

    1997-01-01

    In the II-VI compounds doped with transition metals (diluted magnetic semiconductors) a substitution of cation by the introduced magnetic ion leads to hybridization of its 3d states with the sp states of the host semiconductor. The degree of hybridization of the 3d states and its interaction with the host material band states has been a subject of numerous discussions. Inner shell absorption spectroscopy provides very useful means of electronic structure analysis in a wide variety of systems. Due to its selectivity for atomic species and the selection rules for electron transitions, the soft X-ray absorption technique offers quite unique opportunity to measure directly the site-selective local density of the unoccupied d states in the compounds studied. Results are reported for ZnS compounds with Mn, Fe, Co or Ni substitutions for Zn

  16. Ductile-phase toughening and fatigue crack growth in Nb3Al base alloys

    International Nuclear Information System (INIS)

    Gnanamoorthy, R.; Hanada, S.

    1996-01-01

    Niobium aluminide (Nb 3 Al) base intermetallic compounds exhibit good high-temperature strength and creep properties and potential for applications above 1,200 C provided their inadequately low room-temperature ductility, fracture toughness and fatigue crack growth behavior are improved. Addition of tantalum to Nb 3 Al base materials improves the high-temperature strength significantly and seems to be a potential alloying element. In the present study, room temperature fracture toughness and fatigue crack growth behavior of tantalum alloyed Nb 3 Al base alloy prepared by ingot metallurgy are investigated

  17. Corrosion properties and corrosion evolution of as-cast AZ91 alloy with rare earth yttrium

    International Nuclear Information System (INIS)

    Luo, T.J.; Yang, Y.S.

    2011-01-01

    Highlights: → Minor addition of Y will increase the corrosion resistance of AZ91 alloy, and 0.3 wt.% Y is the optimum addition. → A film composed of Mg(OH) 2 , MgCO 3 , Al(OH) 3 and Al 2 O 3 is formed on the surface of AZ91 alloy with rare earth Y free. → The film of AZ91 alloy with 0.3 wt.% Y is mainly composed of Mg(OH) 2 and MgCO 3 without any Al(OH) 3 and Al 2 O 3 . → The relative quantity of MgCO 3 in the surface film of AZ91 + 0.3 wt.% Y is bigger than that of AZ91 alloy with Y free. → Y 2 O 3 phase is found in the surface film of alloy III, which benefits to stabilize the surface film. -- Abstract: The corrosion resistance property and the corrosion evolution of as-cast AZ91 alloy with rare earth Y addition are investigated by using immersion tests, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). The results show that the proper amount of Y in the alloys can improve the corrosion resistance of AZ91 alloys effectively. With the increment of Y, the corrosion rate of the modified AZ91 alloys by Y addition was markedly less than that of AZ91 alloy. The corrosion rate of AZ91 alloy with 0.3 wt.% Y was the slightest, but further addition of Y content over 0.3 wt.% make the corrosion heavier. The XPS analysis suggests that the compound film of AZ91 alloy with 0.3 wt.% Y is mainly composed of Mg(OH) 2 and MgCO 3 without any Al(OH) 3 and Al 2 O 3 , in addition, Y 2 O 3 phase is found in the compound film of AZ91 alloy with 0.3 wt.% Y, which benefits to stabilize the surface film.

  18. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  19. Prediction of the epoxy moulding compound aging effect on package reliability

    NARCIS (Netherlands)

    Noijen, S.P.M.; Engelen, R.A.B.; Martens, J.; Opran, A.; Sluis, van der O.; Silfhout, van R.B.R.

    2010-01-01

    Most semi-conductor devices are encapsulated by epoxy moulding compound (EMC) material. Even after curing at the prescribed temperature and time in accordance with the supplier’s curing specifications often the product is not yet 100% fully cured. As a consequence, the curing process of a product

  20. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349