Polarization insensitive wavelength conversion in a dispersion-engineered silicon waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Peucheret, Christophe

2012-01-01

We experimentally demonstrate polarization-insensitive all optical wavelength conversion of a 10-Gb/s DPSK data signal based on four-wave mixing in a silicon waveguide with an angled-pump scheme. Dispersion engineering is applied to the silicon waveguide to obtain similar four-wave mixing convers...... conversion performances for both the TE and TM modes. Bit-error rate measurements are performed and error-free operation is achieved. We also demonstrate polarization-insensitive wavelength conversion with a large separation between the idler and signal using a dual-pump configuration....

Silicon subsystem mechanical engineering closeout report for the Solenoidal Detector Collaboration

Energy Technology Data Exchange (ETDEWEB)

Hanlon, J.; Christensen, R.W.; Hayman, G.; Jones, D.C.; Ross, R.; Wilds, W.; Yeamans, S.; Ziock, H.J.

1995-02-01

The authors group at Los Alamos National Laboratory was responsible for the mechanical engineering of the silicon tracking system of the Solenoidal Detector Collaboration (SDC) experiment of the Superconducting Super Collider (SSC) project. The responsibility included the overall design of the system from the mechanical point of view, development and integration of the cooling system, which was required to remove the heat generated by the front-end electronics, assembly of the system to extremely tight tolerances, and verification that the construction and operational stability and alignment tolerances would be met. A detailed description of the concepts they developed and the work they performed can be found in a report titled ``Silicon Subsystem Mechanical Engineering Work for the Solenoidal Detector Collaboration`` which they submitted to the SSC Laboratory. In addition to the mechanical engineering work, they also performed activation, background, and shielding studies for the SSC program. Much of the work they performed was potentially useful for other future high energy physics (HEP) projects. This report describes the closeout work that was performed for the Los Alamos SDC project. Four major tasks were identified for completion: (1) integration of the semi-automated assembly station being developed and construction of a precision part to demonstrate solutions to important general assembly problems (the station was designed to build precision silicon tracker subassemblies); (2) build a state-of-the-art TV holography (TVH) system to use for detector assembly stability tests; (3) design, build, and test a water based cooling system for a full silicon shell prototype; and (4) complete and document the activation, background, and shielding studies, which is covered in a separate report.

Silicon subsystem mechanical engineering closeout report for the Solenoidal Detector Collaboration

International Nuclear Information System (INIS)

Hanlon, J.; Christensen, R.W.; Hayman, G.; Jones, D.C.; Ross, R.; Wilds, W.; Yeamans, S.; Ziock, H.J.

1995-01-01

The authors group at Los Alamos National Laboratory was responsible for the mechanical engineering of the silicon tracking system of the Solenoidal Detector Collaboration (SDC) experiment of the Superconducting Super Collider (SSC) project. The responsibility included the overall design of the system from the mechanical point of view, development and integration of the cooling system, which was required to remove the heat generated by the front-end electronics, assembly of the system to extremely tight tolerances, and verification that the construction and operational stability and alignment tolerances would be met. A detailed description of the concepts they developed and the work they performed can be found in a report titled ''Silicon Subsystem Mechanical Engineering Work for the Solenoidal Detector Collaboration'' which they submitted to the SSC Laboratory. In addition to the mechanical engineering work, they also performed activation, background, and shielding studies for the SSC program. Much of the work they performed was potentially useful for other future high energy physics (HEP) projects. This report describes the closeout work that was performed for the Los Alamos SDC project. Four major tasks were identified for completion: (1) integration of the semi-automated assembly station being developed and construction of a precision part to demonstrate solutions to important general assembly problems (the station was designed to build precision silicon tracker subassemblies); (2) build a state-of-the-art TV holography (TVH) system to use for detector assembly stability tests; (3) design, build, and test a water based cooling system for a full silicon shell prototype; and (4) complete and document the activation, background, and shielding studies, which is covered in a separate report

Practical application of silicon nitride ceramics for sliding parts of rotary engine

International Nuclear Information System (INIS)

Ueki, M.; Sato, Y.; Fukuda, K.

1994-01-01

Research on ceramic substitutes for the apex seals of the rotary engine have been carrying out. The aim of the substitution of apex seals, the development of high strength silicon nitride ceramics, and the application of the ceramic to the apex seals are described. The properties of silicon nitride ceramics used as apex seals in rotary engines for racing cars are presented. The apex seals were recovered from the rotary engines of racing cars in the 1989 and 1990 Le Mans 24-hour Grand Prix races, and the damage of the seals was investigated and analyzed in detail. One problem was the adhesion to the seals of the hardened chromium plating detached from the inside surface of the rotor housing. The adhesion of chromium caused the fine cracking and subsequent chipping of the apex seals. (orig.)

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

Silicon photonics III systems and applications

CERN Document Server

Lockwood, David

2016-01-01

This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

Light propagation in one-dimensional porous silicon complex systems

NARCIS (Netherlands)

Oton, C.J.; Dal Negro, L.; Gaburro, Z.; Pavesi, L.; Johnson, P.J.; Lagendijk, Aart; Wiersma, D.S.

2003-01-01

We discuss the optical properties of one-dimensional complex dielectric systems, in particular the time-resolved transmission through thick porous silicon quasiperiodic multi-layers. Both in numerical calculations and experiments we find dramatic distortion effects, i.e. pulse stretching and

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

OpenAIRE

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-01-01

Spin-dependent relaxation and recombination processes in $\\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, t...

The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

International Nuclear Information System (INIS)

Akhmetov, V.D.; Bolotov, V.V.

1980-01-01

By means of IR-absorption measurements the dose dependencies of the concentrations of vacancy-oxygen complexes (VO), interstitial oxygen atoms (Osub(I)), substitutional carbon atoms (Csub(S)) and interstitial carbon-oxygen complexes (Csub(I)Osub(I)) in n- and p-type silicon irradiated with 1.1 MeV electrons have been investigated. The observed increase of the production rate of VO-complexes with the rise of carbon and boron atoms concentrations (these impurities act as sinks for silicon interstitial atoms) has been explained in terms of annihilation of the vacancies and interstitials on the oxygen atoms. The results obtained show that boron atoms are more effective sinks than carbon atoms for the interstitial silicon atoms. That seems to be connected not only with the higher probability of boron injection into interstitial position but also with the further capture of interstitial silicon atoms on the interstitial boron, i.e. with the interstitial cluster formation. (author)

Complex Adaptive Systems of Systems (CASOS) engineering environment.

Energy Technology Data Exchange (ETDEWEB)

Detry, Richard Joseph; Linebarger, John Michael; Finley, Patrick D.; Maffitt, S. Louise; Glass, Robert John, Jr.; Beyeler, Walter Eugene; Ames, Arlo Leroy

2012-02-01

Complex Adaptive Systems of Systems, or CASoS, are vastly complex physical-socio-technical systems which we must understand to design a secure future for the nation. The Phoenix initiative implements CASoS Engineering principles combining the bottom up Complex Systems and Complex Adaptive Systems view with the top down Systems Engineering and System-of-Systems view. CASoS Engineering theory and practice must be conducted together to develop a discipline that is grounded in reality, extends our understanding of how CASoS behave and allows us to better control the outcomes. The pull of applications (real world problems) is critical to this effort, as is the articulation of a CASoS Engineering Framework that grounds an engineering approach in the theory of complex adaptive systems of systems. Successful application of the CASoS Engineering Framework requires modeling, simulation and analysis (MS and A) capabilities and the cultivation of a CASoS Engineering Community of Practice through knowledge sharing and facilitation. The CASoS Engineering Environment, itself a complex adaptive system of systems, constitutes the two platforms that provide these capabilities.

Engineering education as a complex system

Science.gov (United States)

Gattie, David K.; Kellam, Nadia N.; Schramski, John R.; Walther, Joachim

2011-12-01

This paper presents a theoretical basis for cultivating engineering education as a complex system that will prepare students to think critically and make decisions with regard to poorly understood, ill-structured issues. Integral to this theoretical basis is a solution space construct developed and presented as a benchmark for evaluating problem-solving orientations that emerge within students' thinking as they progress through an engineering curriculum. It is proposed that the traditional engineering education model, while analytically rigorous, is characterised by properties that, although necessary, are insufficient for preparing students to address complex issues of the twenty-first century. A Synthesis and Design Studio model for engineering education is proposed, which maintains the necessary rigor of analysis within a uniquely complex yet sufficiently structured learning environment.

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

2009-07-01

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Silicon Carbide Defect Qubits/Quantum Memory with Field-Tuning: OSD Quantum Science and Engineering Program (QSEP)

Science.gov (United States)

2017-08-01

TECHNICAL REPORT 3073 August 2017 Silicon Carbide Defect Qubits/Quantum Memory with Field-tuning: OSD Quantum Science and Engineering Program...Quantum Science and Engineering Program) by the Advanced Concepts and Applied Research Branch (Code 71730), the Energy and Environmental Sustainability...the Secretary of Defense (OSD) Quantum Science and Engineering Program (QSEP). Their collaboration topic was to examine the effect of electric-field

Determination of phosphorus and silicon in tungsten trioxide as reduced molybdotungsten complexes without matrix separation

International Nuclear Information System (INIS)

Chkanikova, O.K.; Dorokhova, E.N.

1979-01-01

Studied are conditions of formation and reduction of molybdotungsten phosphorus (MTPC) and molybdotungsten silicon (MTSC) complexes at high excess of the ligand. It is established that MTPC are formed in a wide pH range, limited by aggregate stability of the solution (pH 4.5). Using the method of isomolar series it is shown that at pH 1.2 a complex with one Mo atom in coordination sphere is formed, at pH 3.2 - with two Mo atoms. Spectrophotometric method of phosphorus and silicon determination of tungsten trioxide without the base separation is developed. The method is based on silicon determination after MTPC decomposition in the presence of citric acid and determination of silicon and phosphorus sum under conditions of MTPC formation in the presence of oxalic acid. Phosphorus amount is determined according to the difference

Radiation accelerated formation of oxygen and carbon related complexes in silicon

International Nuclear Information System (INIS)

Lazrak, A.; Magnea, N.; Pautrat, J.L.

1984-06-01

During the pulling of silicon monocrystals by the Czochralsky method, oxygen is incorporated into the lattice. It is known from early works that low temperature annealings (400-1000 0 C) make this oxygen to precipitate and a number of different defects to be generated. In order to check whether the fast diffusivity of an oxygen silicon interstitial complex has to be taken in consideration it was interesting to examinate the possible role of radiation damage on the formation of oxygen related defects. Experimental results of an experiment are presented and discussed

Engineered Emitters for Improved Silicon Photovoltaics

Science.gov (United States)

Kamat, Ronak A.

In 2014, installation of 5.3GW of new Photovoltaic (PV) systems occurred in the United States, raising the total installed capacity to 16.36GW. Strong growth is predicted for the domestic PV market with analysts reporting goals of 696GW by 2020. Conventional single crystalline silicon cells are the technology of choice, accounting for 90% of the installations in the global commercial market. Cells made of GaAs offer higher efficiencies, but at a substantially higher cost. Thin film technologies such as CIGS and CdTe compete favorably with multi-crystalline Si (u-Si), but at 20% efficiency, still lag the c-Si cell in performance. The c-Si cell can be fabricated to operate at approximately 25% efficiency, but commercially the efficiencies are in the 18-21% range, which is a direct result of cost trade-offs between process complexity and rapid throughput. With the current cost of c-Si cell modules at nearly 0.60/W. The technology is well below the historic metric of 1/W for economic viability. The result is that more complex processes, once cost-prohibitive, may now be viable. An example is Panasonic's HIT cell which operates in the 22-24% efficiency range. To facilitate research and development of novel PV materials and techniques, RIT has developed a basic solar cell fabrication process. Student projects prior to this work had produced cells with 12.8% efficiency using p type substrates. This thesis reports on recent work to improve cell efficiencies while simultaneously expanding the capability of the rapid prototyping process. In addition to the p-Si substrates, cells have been produced using n-Si substrates. The cell emitter, which is often done with a single diffusion or implant has been re-engineered using a dual implant of the same dose. This dual-implanted emitter has been shown to lower contact resistance, increase Voc, and increase the efficiency. A p-Si substrate cell has been fabricated with an efficiency of 14.6% and n-Si substrate cell with a 13

Complex engineering systems science meets technology

CERN Document Server

Minai, Ali A; Bar-Yam, Yaneer

2006-01-01

Every time that we take money out of an ATM, surf the internet or simply turn on a light switch, we enjoy the benefits of complex engineered systems. Systems like power grids and global communication networks are so ubiquitous in our daily lives that we usually take them for granted, only noticing them when they break down. But how do such amazing technologies and infrastructures come to be what they are? How are these systems designed? How do distributed networks work? How are they made to respond rapidly in 'real time'? And as the demands that we place on these systems become increasingly complex, are traditional systems-engineering practices still relevant? This volume examines the difficulties that arise in creating highly complex engineered systems and new approaches that are being adopted. Topics addressed range from the formal representation and classification of distributed networked systems to revolutionary engineering practices inspired by biological evolution. By bringing together the latest resear...

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Development of technology of complex aluminum-silicon-chrome alloy with utilization of off grade raw materials

Directory of Open Access Journals (Sweden)

A. Mekhtiev

2015-01-01

Full Text Available Experimental studies on obtaining a complex aluminum-silicon-chrome alloy (FASCh from Karaganda high-ash coals and high-carbon ferrochromefines were carried out. A method for smelting low-carbon ferrochrome using aluminum-silicon-chrome alloy as a reductant is suggested.

How Engineers Negotiate Domain Boundaries in a Complex, Interdisciplinary Engineering Project

Science.gov (United States)

Panther, Grace; Montfort, Devlin; Pirtle, Zachary

2017-01-01

Engineering educators have an essential role in preparing engineers to work in a complex, interdisciplinary workforce. While much engineering education focuses on teaching students to develop disciplinary expertise in specific engineering domains, there is a strong need to teach engineers about the knowledge that they develop or use in their work (Bucciarelli 1994, Allenby Sarewitz, 2011; Frodeman, 2013). The purpose of this research is to gain a better understanding of the knowledge systems of practicing engineers through observations of their practices such that the insights learned can guide future education efforts. Using an example from a complex and interdisciplinary engineering project, this paper presents a case study overviewing the types of epistemological (or knowledge-acquiring or using) complexities that engineers navigate. Specifically, we looked at a discussion of the thermal design of a CubeSat that occurred during an engineering review at NASA. We analyzed the review using a framework that we call 'peak events', or pointed discussions between reviewers, project engineers, and managers. We examined the dialog within peak events to identify the ways that knowledge was brought to bear, highlighting discussions of uncertainty and the boundaries of knowledge claims. We focus on one example discussion surrounding the thermal design of the CubeSat, which provides a particularly thorough example of a knowledge system since the engineers present explained, justified, negotiated, and defended knowledge within a social setting. Engineering students do not get much practice or instruction in explicitly negotiating knowledge systems and epistemic standards in this way. We highlight issues that should matter to engineering educators, such as the need to discuss what level of uncertainty is sufficient and the need to negotiate boundaries of system responsibility. Although this analysis is limited to a single discussion or 'peak event', our case shows that this

Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

Science.gov (United States)

Zianni, Xanthippi

2018-03-01

Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Brenet, G.; Timerkaeva, D.; Caliste, D.; Pochet, P. [CEA, INAC-SP2M, Atomistic Simulation Laboratory, F-38000 Grenoble (France); Univ. Grenoble Alpes, INAC-SP2M, L-Sim, F-38000 Grenoble (France); Sgourou, E. N.; Londos, C. A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)

2015-09-28

We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.

A silicon tracker for Christmas

CERN Multimedia

2008-01-01

The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

Quantifying complexity in metabolic engineering using the LASER database

Directory of Open Access Journals (Sweden)

James D. Winkler

2016-12-01

Full Text Available We previously introduced the LASER database (Learning Assisted Strain EngineeRing, https://bitbucket.org/jdwinkler/laser_release (Winkler et al. 2015 to serve as a platform for understanding past and present metabolic engineering practices. Over the past year, LASER has been expanded by 50% to include over 600 engineered strains from 450 papers, including their growth conditions, genetic modifications, and other information in an easily searchable format. Here, we present the results of our efforts to use LASER as a means for defining the complexity of a metabolic engineering “design”. We evaluate two complexity metrics based on the concepts of construction difficulty and novelty. No correlation is observed between expected product yield and complexity, allowing minimization of complexity without a performance trade-off. We envision the use of such complexity metrics to filter and prioritize designs prior to implementation of metabolic engineering efforts, thereby potentially reducing the time, labor, and expenses of large-scale projects. Possible future developments based on an expanding LASER database are then discussed. Keywords: Metabolic engineering, Synthetic biology, Standardization, Design tools

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

Science.gov (United States)

Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

2014-12-14

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

KAUST Repository

Mughal, Asad Jahangir

2014-01-01

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

White light emission from engineered silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan

Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

Fostering Creative Engineers: A Key to Face the Complexity of Engineering Practice

Science.gov (United States)

Zhou, Chunfang

2012-01-01

Recent studies have argued a shift of thinking about engineering practice from a linear conception to a system understanding. The complexity of engineering practice has been thought of as the root of challenges for engineers. Moreover, creativity has been emphasised as one key capability that engineering students should master. This paper aims to…

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Computational error and complexity in science and engineering computational error and complexity

CERN Document Server

Lakshmikantham, Vangipuram; Chui, Charles K; Chui, Charles K

2005-01-01

The book "Computational Error and Complexity in Science and Engineering” pervades all the science and engineering disciplines where computation occurs. Scientific and engineering computation happens to be the interface between the mathematical model/problem and the real world application. One needs to obtain good quality numerical values for any real-world implementation. Just mathematical quantities symbols are of no use to engineers/technologists. Computational complexity of the numerical method to solve the mathematical model, also computed along with the solution, on the other hand, will tell us how much computation/computational effort has been spent to achieve that quality of result. Anyone who wants the specified physical problem to be solved has every right to know the quality of the solution as well as the resources spent for the solution. The computed error as well as the complexity provide the scientific convincing answer to these questions. Specifically some of the disciplines in which the book w...

Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

Science.gov (United States)

Timerkaeva, Dilyara; Attaccalite, Claudio; Brenet, Gilles; Caliste, Damien; Pochet, Pascal

2018-04-01

The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.

Complexity management in engineering design a primer

CERN Document Server

Maurer, Maik

2017-01-01

The treatise supports understanding the phenomena of complexity in engineering, distinguishes complexity from other challenges and presents an overview of definitions and applied approaches. The historical background of complexity management is explained by highlighting the important epochs, their key actors and their discoveries, findings and developments. Knowing about the appearance of early system awareness in ancient Greece, the creation of mechanical philosophy in the 17th century and the discovery of classic physics enables the reader to better comprehend modern system sciences and management approaches. A classification of complexity management approaches by research fields indicates current focus areas and starting points for future discussions. In a comprehensive map, the classification points out mutual overlaps between engineering disciplines in terms of similar complexity management approaches. Finally, the treatise introduces a generic complexity management framework, which is based on structura...

Engineering of silicon surfaces at the micro- and nanoscales for cell adhesion and migration control

Directory of Open Access Journals (Sweden)

Torres-Costa V

2012-02-01

Full Text Available Vicente Torres-Costa1, Gonzalo Martínez-Muñoz2, Vanessa Sánchez-Vaquero3, Álvaro Muñoz-Noval1, Laura González-Méndez3, Esther Punzón-Quijorna1,4, Darío Gallach-Pérez1, Miguel Manso-Silván1, Aurelio Climent-Font1,4, Josefa P García-Ruiz3, Raúl J Martín-Palma11Department of Applied Physics, 2Department of Computer Science, 3Department of Molecular Biology, 4Centre for Micro Analysis of Materials, Universidad Autónoma de Madrid, Madrid, SpainAbstract: The engineering of surface patterns is a powerful tool for analyzing cellular communication factors involved in the processes of adhesion, migration, and expansion, which can have a notable impact on therapeutic applications including tissue engineering. In this regard, the main objective of this research was to fabricate patterned and textured surfaces at micron- and nanoscale levels, respectively, with very different chemical and topographic characteristics to control cell–substrate interactions. For this task, one-dimensional (1-D and two-dimensional (2-D patterns combining silicon and nanostructured porous silicon were engineered by ion beam irradiation and subsequent electrochemical etch. The experimental results show that under the influence of chemical and morphological stimuli, human mesenchymal stem cells polarize and move directionally toward or away from the particular stimulus. Furthermore, a computational model was developed aiming at understanding cell behavior by reproducing the surface distribution and migration of human mesenchymal stem cells observed experimentally.Keywords: surface patterns, silicon, hMSCs, ion-beam patterning

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Science.gov (United States)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Experimental broadband absorption enhancement in silicon nanohole structures with optimized complex unit cells.

Science.gov (United States)

Lin, Chenxi; Martínez, Luis Javier; Povinelli, Michelle L

2013-09-09

We design silicon membranes with nanohole structures with optimized complex unit cells that maximize broadband absorption. We fabricate the optimized design and measure the optical absorption. We demonstrate an experimental broadband absorption about 3.5 times higher than an equally-thick thin film.

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

Science.gov (United States)

Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

2016-05-01

The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

State analysis requirements database for engineering complex embedded systems

Science.gov (United States)

Bennett, Matthew B.; Rasmussen, Robert D.; Ingham, Michel D.

2004-01-01

It has become clear that spacecraft system complexity is reaching a threshold where customary methods of control are no longer affordable or sufficiently reliable. At the heart of this problem are the conventional approaches to systems and software engineering based on subsystem-level functional decomposition, which fail to scale in the tangled web of interactions typically encountered in complex spacecraft designs. Furthermore, there is a fundamental gap between the requirements on software specified by systems engineers and the implementation of these requirements by software engineers. Software engineers must perform the translation of requirements into software code, hoping to accurately capture the systems engineer's understanding of the system behavior, which is not always explicitly specified. This gap opens up the possibility for misinterpretation of the systems engineer's intent, potentially leading to software errors. This problem is addressed by a systems engineering tool called the State Analysis Database, which provides a tool for capturing system and software requirements in the form of explicit models. This paper describes how requirements for complex aerospace systems can be developed using the State Analysis Database.

Advanced Silicon Carbide from Molecular Engineering and Actinide Fuels

International Nuclear Information System (INIS)

Meyer, D.J.M.; Garcia, J.; Guillaneux, D.; Wong-Chi-Man, M.; Moreau, J.J.E.

2008-01-01

In the frame of nuclear fuels studies for generation IV, carbides or oxycarbides assemblies are one of the engaged material for high temperature reactors. The design of the fuels is not yet defined but some structures are actually considered with SiC as matrix for the actinide fuel. In this work we have studied the synthesis of a multi-scale structure controlled SiC matrix using molecular silicon organometallic precursors. The aim of this work was to develop a way to obtain multi-scale SiC matrix material which could be engineered to fit in any fuel structure defined for generation IV fuels. The control of this multi-scale structure was done using several simulation methods specific of the low temperature solution synthesis of the precursor. In a first step, we have focused our effort on the synthesis of the SiC material. A first level of template was successfully done by the use of solid silica 500 nm balls. A second level of template was studied by the use of meso-porous silica, structured at a 50 nm level. At least, supra-molecular simulation in non aqueous media was considered with the difficulty to build a molecular assembly (inverse micelles). In a second step, we have functionalized the primary silane phase with actinide complexing agent in order to blend directly the actinide inside this primary phase in a controlled way. During these studies, a new one pot synthesis route to obtain the functionalized primary silane phase was developed. (authors)

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

Science.gov (United States)

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Research on the Fault Coefficient in Complex Electrical Engineering

Directory of Open Access Journals (Sweden)

Yi Sun

2015-08-01

Full Text Available Fault detection and isolation in a complex system are research hotspots and frontier problems in the reliability engineering field. Fault identification can be regarded as a procedure of excavating key characteristics from massive failure data, then classifying and identifying fault samples. In this paper, based on the fundamental of feature extraction about the fault coefficient, we will discuss the fault coefficient feature in complex electrical engineering in detail. For general fault types in a complex power system, even if there is a strong white Gaussian stochastic interference, the fault coefficient feature is still accurate and reliable. The results about comparative analysis of noise influence will also demonstrate the strong anti-interference ability and great redundancy of the fault coefficient feature in complex electrical engineering.

Modelling methodology for engineering of complex sociotechnical systems

CSIR Research Space (South Africa)

Oosthuizen, R

2014-10-01

Full Text Available Different systems engineering techniques and approaches are applied to design and develop complex sociotechnical systems for complex problems. In a complex sociotechnical system cognitive and social humans use information technology to make sense...

Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

KAUST Repository

Mink, Justine E.

2013-11-25

We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superconducting Super Collider silicon tracking subsystem research and development

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

1990-12-01

The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Science.gov (United States)

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-05-01

Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

Lessons Learned from Crowdsourcing Complex Engineering Tasks.

Science.gov (United States)

Staffelbach, Matthew; Sempolinski, Peter; Kijewski-Correa, Tracy; Thain, Douglas; Wei, Daniel; Kareem, Ahsan; Madey, Gregory

2015-01-01

Crowdsourcing is the practice of obtaining needed ideas, services, or content by requesting contributions from a large group of people. Amazon Mechanical Turk is a web marketplace for crowdsourcing microtasks, such as answering surveys and image tagging. We explored the limits of crowdsourcing by using Mechanical Turk for a more complicated task: analysis and creation of wind simulations. Our investigation examined the feasibility of using crowdsourcing for complex, highly technical tasks. This was done to determine if the benefits of crowdsourcing could be harnessed to accurately and effectively contribute to solving complex real world engineering problems. Of course, untrained crowds cannot be used as a mere substitute for trained expertise. Rather, we sought to understand how crowd workers can be used as a large pool of labor for a preliminary analysis of complex data. We compared the skill of the anonymous crowd workers from Amazon Mechanical Turk with that of civil engineering graduate students, making a first pass at analyzing wind simulation data. For the first phase, we posted analysis questions to Amazon crowd workers and to two groups of civil engineering graduate students. A second phase of our experiment instructed crowd workers and students to create simulations on our Virtual Wind Tunnel website to solve a more complex task. With a sufficiently comprehensive tutorial and compensation similar to typical crowd-sourcing wages, we were able to enlist crowd workers to effectively complete longer, more complex tasks with competence comparable to that of graduate students with more comprehensive, expert-level knowledge. Furthermore, more complex tasks require increased communication with the workers. As tasks become more complex, the employment relationship begins to become more akin to outsourcing than crowdsourcing. Through this investigation, we were able to stretch and explore the limits of crowdsourcing as a tool for solving complex problems.

Symmetry and structure of N-O shallow donor complexes in silicon

International Nuclear Information System (INIS)

Alt, H.Ch.; Wagner, H.E.

2012-01-01

Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

International Nuclear Information System (INIS)

Park, Jeong-Yong; Lee, Jong-Hyun

2003-01-01

This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Metasynthetic computing and engineering of complex systems

CERN Document Server

Cao, Longbing

2015-01-01

Provides a comprehensive overview and introduction to the concepts, methodologies, analysis, design and applications of metasynthetic computing and engineering. The author: Presents an overview of complex systems, especially open complex giant systems such as the Internet, complex behavioural and social problems, and actionable knowledge discovery and delivery in the big data era. Discusses ubiquitous intelligence in complex systems, including human intelligence, domain intelligence, social intelligence, network intelligence, data intelligence and machine intelligence, and their synergy thro

Mathematics for electric engineers. Complex numbers; Mathematiques pour l`electricien. Nombres complexes

Energy Technology Data Exchange (ETDEWEB)

Rouxel, C. [Conservatoire National des Arts et Metiers (CNAM), 75 - Paris (France)

1999-05-01

Complex numbers are widely used in electrical engineering. This article is divided into 5 parts dealing successively with: the cartesian form of complex numbers (definition, conjugated complex numbers, graphical representation); the trigonometrical form of complex numbers (module and argument, trigonometrical form, exponential notation, multiplication and division of two complex numbers); Moivre and Euler formulae; applications (square root and second degree equation, n. roots, plan rotation and similarity); cissoidal transformation (definition, properties, applications to electricity: complex impedance in permanent sinusoidal regime, transfer function of a linear system in permanent regime, study of an example). (J.S.)

Complex variables and the Laplace transform for engineers

CERN Document Server

LePage, Wilbur R

2010-01-01

""An excellent text; the best I have found on the subject."" - J. B. Sevart, Department of Mechanical Engineering, University of Wichita""An extremely useful textbook for both formal classes and for self-study."" - Society for Industrial and Applied MathematicsEngineers often do not have time to take a course in complex variable theory as undergraduates, yet is is one of the most important and useful branches of mathematics, with many applications in engineering. This text is designed to remedy that need by supplying graduate engineering students (especially electrical engineering) with a cou

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

KAUST Repository

Mughal, Asad Jahangir; El Demellawi, Jehad K.; Chaieb, Saharoui

2014-01-01

reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2017-01-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible

Electrical studies of Fe-related defect complexes in silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, Chi Kwong

2012-09-15

Iron (Fe) is an important impurity in solar-grade silicon which contributes substantially in degrading the efficiency of solar cells. The degradation is mainly caused by the Fe atoms situating at an unperturbed tetrahedral interstitial sites (Fei) in the silicon crystal, consequently acting as a recombination center. By altering the position and the neighbouring environment at which the Fe atoms reside, there are opportunities in minimizing or neutralizing the electrical activity of Fe. Furthermore, utilizing the high mobility of Fe, one can increase the performance of a device by accumulating the Fe atoms from critical regions into regions where Fe can be tolerated. These approaches can help in realizing high efficient solar cells based on cheap and highly Fe-contaminated silicon. In this work, we have investigated the interaction between Fe and defects relevant to solar cells, using mainly electrical characterization methods such as capacitance-voltage measurement, deep level transient spectroscopy and admittance spectroscopy. From the study of potential hydrogen passivation of Fe, hydrogen was introduced through wet chemical etching and further driven to a defined region. Using depth profiles, it is found that incorporation of hydrogen stimulates the dissociation of the iron-boron (Fe-B) pair, releasing and resulting in the unwanted Fei. At the same time, no passivation of Fe by hydrogen has been observed. On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation. The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (EV), respectively. In the search for substitutional Fe to investigate its electrical activity

Next generation structural silicone glazing

Directory of Open Access Journals (Sweden)

Charles D. Clift

2015-06-01

Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

Morphogenetic Engineering Toward Programmable Complex Systems

CERN Document Server

Sayama, Hiroki; Michel, Olivier

2012-01-01

Generally, spontaneous pattern formation phenomena are random and repetitive, whereas elaborate devices are the deterministic product of human design. Yet, biological organisms and collective insect constructions are exceptional examples of complex systems that are both self-organized and architectural.   This book is the first initiative of its kind toward establishing a new field of research, Morphogenetic Engineering, to explore the modeling and implementation of “self-architecturing” systems. Particular emphasis is placed on the programmability and computational abilities of self-organization, properties that are often underappreciated in complex systems science—while, conversely, the benefits of self-organization are often underappreciated in engineering methodologies.   Altogether, the aim of this work is to provide a framework for and examples of a larger class of “self-architecturing” systems, while addressing fundamental questions such as   > How do biological organisms carry out morphog...

Novel scalable silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA) composite materials for tissue engineering and drug delivery applications

DEFF Research Database (Denmark)

Mohanty, Soumyaranjan; Hemmingsen, Mette; Wojcik, Magdalena

2013-01-01

material with increased hydrophilicity in regard to virgin silicone elastomer, making it suitable as a scaffold for tissue engineering and with the concomitant possibility for delivering drug from the scaffold to the tissue. Interpenetrating polymer networks (IPNs) of silicone elastomer and PHEMA......In recent years hydrogels have received increasing attention as potential materials for applications in regenerative medicine. They can be used for scaffold materials providing structural integrity to tissue constructs, for controlled delivery of drugs and proteins to cell and tissues......, and for support materials in tissue growth. However, the real challenge is to obtain sufficiently good mechanical properties of the hydrogel. The present study shows the combination of two normally non-compatible materials, silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA), into a novel composite...

Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

CERN Document Server

Langouche, Guido

2015-01-01

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

DEFF Research Database (Denmark)

Lloret, Juan; Sancho, Juan; Pu, Minhao

2011-01-01

A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploit...

Silicon-based tracking system: Mechanical engineering and design

International Nuclear Information System (INIS)

Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Woloshun, K.A.; Reid, R.S.; Hanlon, J.A.; Michaud, F.D.; Dransfield, G.D.; Ziock, H.J.; Palounek, A.P.

1992-01-01

The Silicon Tracking System (STS) is composed of silicon strip detectors arranged by both in a cylindrical array and an array of flat panels about the interaction region. The cylindrical array is denoted the central region and the flat panel arrays, which are normal to the beam axis, we denoted the forward regions. The overall length of the silicon array is 5.16 m and the maximum diameter is 0.93 m. The Silicon Tracking System Conceptual Design Report, should be consulted for the body of analysis performed to quantify the present design concept. For the STS to achieve its physics goals, the mechanical structures and services must support 17 m 2 of silicon detectors and stabilize their positions to within 5 μm, uniformly cool the detector the system to O degrees C and at the same time potentially remove up to 13 kW of waste heat generated by the detector electronics, provide up to 3400 A of current to supply the 6.5 million electronics channels, and supply of control and data transmission lines for those channels. These objectives must be achieved in a high ionizing radiation environment, using virtually no structural mass and only low-Z materials. The system must be maintainable during its 10 year operating life

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Optimization strategies for complex engineering applications

Energy Technology Data Exchange (ETDEWEB)

Eldred, M.S.

1998-02-01

LDRD research activities have focused on increasing the robustness and efficiency of optimization studies for computationally complex engineering problems. Engineering applications can be characterized by extreme computational expense, lack of gradient information, discrete parameters, non-converging simulations, and nonsmooth, multimodal, and discontinuous response variations. Guided by these challenges, the LDRD research activities have developed application-specific techniques, fundamental optimization algorithms, multilevel hybrid and sequential approximate optimization strategies, parallel processing approaches, and automatic differentiation and adjoint augmentation methods. This report surveys these activities and summarizes the key findings and recommendations.

Managing complexity challenges for industrial engineering and operations management

CERN Document Server

López-Paredes, Adolfo; Pérez-Ríos, José

2014-01-01

This book presents papers by experts in the field of Industrial Engineering, covering topics in business strategy; modelling and simulation in operations research; logistics and production; service systems; innovation and knowledge; and project management. The focus of operations and production management has evolved from product and manufacturing to the capabilities of firms and collaborative management. Nowadays, Industrial Engineering is concerned with the study of how to design, modify, control and improve the performance of complex systems. It has extended its scope to any physical landscape populated by social agents. This raises a major challenge to Industrial Engineering:  managing complexity. This volume shows how experts are dealing with this challenge.

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

KAUST Repository

Ghoneim, Mohamed T.

2017-02-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

Lattice location of transition metals in silicon by means of emission channeling

CERN Document Server

da Silva, Daniel José; Wahl, Ulrich; Correia, João Guilherme

The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades. Their unintentional introduction during the Si production, crystal growth and device manufacturing have made them difficult contaminants to avoid. Once in silicon they easily form deep levels, either when in the isolated form or when forming precipitates. One important effect is the reduction of efficiency of silicon-based devices, being dramatic, in particular, in photovoltaic applications. One way to avoid such effects is by engineering the location of the TM: some TM complexes or lattice sites of the isolated form do not introduce any level in the silicon bandgap. Which point defects lead to such passivation is still under debate. Another way is to mitigate the reduction of efficiency by reducing the dangling bonds of TMs with hydrogen. The most important and commonly used procedures to diminish the unwanted effects of the introduced deep levels are, nevertheless, based on the so-c...

Feasibility study on silicon doping using high temperature test engineering reactor

International Nuclear Information System (INIS)

Seki, Masaya; Takaki, Naoyuki; Goto, Minoru; Shimakawa, Satoshi

2011-01-01

The feasibility study on silicon doping using the High Temperature engineering Test Reactor (HTTR) is performed by numerical simulations. The HTTR is a High Temperature Gas-cooled Reactor (HTGR) situated at JAEA Oarai research and development center. It has a 30MW thermal power and the outlet coolant temperature is 950degC. The objective of this study is to evaluate the following issues, 1. The impact of loading Si-ingots into the core on the criticality, 2. The uniformity of the neutron capture reaction rate in Si-ingots, and 3. The production rate of silicon semiconductor. In this study, six Si-ingots are loaded into the irradiation area which is located in the peripheral region of the core. They are irradiated with rotation movement around the axial direction to obtain uniform neutron capture reaction rate in the radial direction. Additionally, the neutron filter, which is made of graphite containing boron, is used to obtain uniform neutron capture reaction rate in the axial direction. The evaluations were conducted by performing the HTTR whole core calculations with the Monte Carlo code MVP-2.0. In the calculations, several tally regions were defined on the Si-ingots to investigate the uniformity of the neutron capture reaction rate. As a result, loading the Si-ingots into the core causes negative reactivity by about 0.7%dk/k. Uniform neutron capture reaction rate of Si-ingot is obtained 98% in the radial and the axial direction. In case of the target of semiconductor resistivity is set to 50 Ωcm, the required irradiation time becomes 10 hours. The HTTR is able to produce silicon semiconductor of 540kg in one-time irradiation. This study was conducted as a joint research with JAEA, Nuclear Fuel Industries, LTD, Toyota Tsusho Corporation and Tokai University. (author)

Engineering of complex systems: The impact of systems engineering at NASA

Science.gov (United States)

Kludze, Ave-Klutse Kodzo Paaku

The "true" impact or value of systems engineering to an organization unfortunately appears not to have been well-studied and understood. The principles of systems engineering are highly encouraged by NASA at all levels, and most practitioners, both internal and external to NASA, intuitively "believe" it adds some value to the development of complex systems by producing them faster, better and cheaper. This research, in trying to fill a gap that exists in the systems engineering literature, analyzes data collected within NASA and other sources external to NASA (INCOSE) for comparisons. Analyses involving a number of case studies performed on selected NASA projects are presented to draw attention to the impact systems engineering had or could have had on these projects. This research clearly shows that systems engineering does add value to projects within and outside NASA. The research results further demonstrate that systems engineering has been beneficial not only to NASA but also to organizations within which INCOSE members work. It was determined, however, that systems engineering does not operate in a vacuum and may not always guarantee success through mere application. During this research, it was discovered that the lack of or inadequate application of systems engineering in the development of complex systems may result in cost overruns, poor technical performance, project delays, and in some cases unmitigated risk with disastrous consequences including the loss of life and property. How much is saved (in terms of cost, schedule) or improved (in terms of technical performance) as a result of its implementation may never be known precisely, but by indirectly measuring its value or impact on a project, percentages of project budget spent on systems engineering activities and any schedule reductions or performance enhancements realized could be determined. According to this research, systems engineering is not a waste of time and resources; in most cases, it is

Structural and Topology Optimization of Complex Civil Engineering Structures

DEFF Research Database (Denmark)

Hald, Frederik; Kirkegaard, Poul Henning; Andersen, Lars Vabbersgaard

2013-01-01

This paper shows the use of topology optimization for finding an optimized form for civil engineering structures. Today topology optimization and shape optimization have been integrated in several commercial finite element codes. Here, the topology of two complex civil engineering structures...

Bi-project management in engineering complex industrial construction projects

NARCIS (Netherlands)

Velde, Robert R. van der; Donk, Dirk Pieter van

2000-01-01

Engineering large industrial construction projects is usually a complex task with several co-operating actors. This paper investigates such projects, characterised by two main actors: the owner of the installation (the client organisation) responsible for the engineering of the production process,

Engineering Education as a Complex System

Science.gov (United States)

Gattie, David K.; Kellam, Nadia N.; Schramski, John R.; Walther, Joachim

2011-01-01

This paper presents a theoretical basis for cultivating engineering education as a complex system that will prepare students to think critically and make decisions with regard to poorly understood, ill-structured issues. Integral to this theoretical basis is a solution space construct developed and presented as a benchmark for evaluating…

A prospective study on silicone breast implants and the silicone-related symptom complex.

Science.gov (United States)

Contant, C M E; Swaak, A J G; Obdeijn, A I M; van der Holt, B; Tjong Joe Wai, R; van Geel, A N; Eggermont, A M M

2002-06-01

This cohort study prospectively evaluated the prevalence of the silicone-related symptom complex (SRSC) in relation to antinuclear antibodies (ANA) and magnetic resonance imaging (MRI) of silicone breast implants (SBI) 1 year after implantation. A total of 57 women undergoing mastectomy followed by immediate breast reconstruction (IBR) and SBI between March 1995 and March 1997 at the University Hospital Rotterdam/Daniel den Hoed Cancer Centre, were prospectively evaluated. Just before and 1 year after IBR the sera of these women were tested for the presence of ANA and they were screened for the prevalence of SRSC-related symptoms by questionnaire. All prostheses were evaluated by MRI 1 month and 1 year after IBR. Just before operation 11% of the women had a Sjögren score of more than 2, whereas 30% had such a score 1 year after IBR ( P = 0.01). One year postoperatively women had significantly more RA/Raynaud-related complaints: 21% preoperatively versus 40% 1 year after IBR ( P = 0.03). Within the undefined complaints-related group 19% had a score of 2 or more preoperatively and 33% 1 year after IBR ( P = 0.09). There were no new cases of ANA positivity 1 year after IBR. The linguine sign was seen by MRI in three implants: one 1 month after IBR and two 1 year after IBR. There was no relation to changes in SRSC expression and these MRI findings. In conclusion, 1 year after SBI implantation women had more SRSC-related complaints, especially Sjögren's and RA/Raynaud's. Moreover there was no correlation between elevated SRSC expression and changes in the presence of ANA or changes in MRI of the SBI 1 year after IBR.

The art of insight in science and engineering mastering complexity

CERN Document Server

Mahajan, Sanjoy

2014-01-01

In this book, Sanjoy Mahajan shows us that the way to master complexity is through insight rather than precision. Precision can overwhelm us with information, whereas insight connects seemingly disparate pieces of information into a simple picture. Unlike computers, humans depend on insight. Based on the author's fifteen years of teaching at MIT, Cambridge University, and Olin College, The Art of Insight in Science and Engineering shows us how to build insight and find understanding, giving readers tools to help them solve any problem in science and engineering. To master complexity, we can organize it or discard it. The Art of Insight in Science and Engineering first teaches the tools for organizing complexity, then distinguishes the two paths for discarding complexity: with and without loss of information. Questions and problems throughout the text help readers master and apply these groups of tools. Armed with this three-part toolchest, and without complicated mathematics, readers can estimate the flight ...

Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

International Nuclear Information System (INIS)

Hashmi, S M; Ahmed, S

2013-01-01

Design, simulation, fabrication and post-process qualification of substrate-engineered Thin Film Transistors (TFTs) are carried out to suggest an alternate manufacturing process step focused on display sensors and large area electronics applications. Damage created by ion implantation of Helium and Silicon ions into single-crystalline n-type silicon substrate provides an alternate route to create an amorphized region responsible for the fabrication of TFT structures with controllable and application-specific output parameters. The post-process qualification of starting material and full-cycle devices using Rutherford Backscattering Spectrometry (RBS) and Proton or Particle induced X-ray Emission (PIXE) techniques also provide an insight to optimize the process protocols as well as their applicability in the manufacturing cycle

Collaborative engineering for complex products

CSIR Research Space (South Africa)

Erasmus, J

2015-10-01

Full Text Available stream_source_info Erasmus_2015.pdf.txt stream_content_type text/plain stream_size 6206 Content-Encoding UTF-8 stream_name Erasmus_2015.pdf.txt Content-Type text/plain; charset=UTF-8 Collaborative engineering... with collaboration and cooperation • Now they compete on implementation (application) instead of standards (infrastructure) Reyes, V., 2014. Dealing with automotive software complexity with virtual prototyping – Part 1: Virtual HIL development basics (accessed 9...

Solar energy innovation and Silicon Valley

Science.gov (United States)

Kammen, Daniel M.

2015-03-01

The growth of the U. S. and global solar energy industry depends on a strong relationship between science and engineering innovation, manufacturing, and cycles of policy design and advancement. The mixture of the academic and industrial engine of innovation that is Silicon Valley, and the strong suite of environmental policies for which California is a leader work together to both drive the solar energy industry, and keep Silicon Valley competitive as China, Europe and other area of solar energy strength continue to build their clean energy sectors.

Comparison of 1000-Centistoke versus 5000-Centistoke Silicone Oil in Complex Retinal Detachment Surgery.

Science.gov (United States)

Zafar, Shakir; Shakir, Munira; Mahmood, Syed Asaad; Amin, Saima; Iqbal, Zafar

2016-01-01

To compare the efficacy and complications of using 1000-centistoke versus 5000-centistoke silicone oil for complex retinal detachment repair. Case series. LRBT Tertiary Eye Hospital, Karachi, from January 2007 to June 2013. Eighty-five eyes (85 patients) presenting with superior rhegmatogenous retinal detachments associated with PVR grades B and C (involving not more than 3 clock hours) were randomized to either 1000 centistokes (n=44) or 5000 centistokes (n=41) silicone oil group. All patients underwent 23-gauge pars plana vitrectomy surgery with silicone oil intraocular tamponade. Patient data was analysed at 18 months post-operatively. IBM SPSS 21 was used for data analysis. There were 52 male and 33 female patients aged between 22 and 70 years (45.2 ±16.2). After the first surgery, successful reattachment of the retina was achieved in 67 eyes (78.8%); of which 35 eyes were in 1000-centistoke and 32 eyes in 5000-centistoke groups. Mean pre-operative Best Corrected Visual Acuity (BCVA) was 1.63 ±0.54 which was improved to a mean post-operative BCVAof 1.46 ±0.78 (1.42 ±0.74 in 1000-centistoke group; 1.49 ±0.78 in 5000 centistoke group). The 1000-centistoke group had a significantly higher frequency of oil emulsification which necessitated early removal of silicone oil. There were 66 eyes (77%) with at least one complication (34 eyes in 1000-centistoke group; 32 eyes in 5000-centistoke group) including cataract, corneal abnormalities, raised IOP, hypotony, vitreous haemorrhage and retinal redetachment. Although visual and anatomical outcomes were comparable between the two groups, the 1000-centistoke silicone oil group developed early oil emulsification necessitating its early removal.

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Tailoring Enterprise Systems Engineering Policy for Project Scale and Complexity

Science.gov (United States)

Cox, Renee I.; Thomas, L. Dale

2014-01-01

Space systems are characterized by varying degrees of scale and complexity. Accordingly, cost-effective implementation of systems engineering also varies depending on scale and complexity. Recognizing that systems engineering and integration happen everywhere and at all levels of a given system and that the life cycle is an integrated process necessary to mature a design, the National Aeronautic and Space Administration's (NASA's) Marshall Space Flight Center (MSFC) has developed a suite of customized implementation approaches based on project scale and complexity. While it may be argued that a top-level system engineering process is common to and indeed desirable across an enterprise for all space systems, implementation of that top-level process and the associated products developed as a result differ from system to system. The implementation approaches used for developing a scientific instrument necessarily differ from those used for a space station. .

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

Science.gov (United States)

Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

2017-04-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling complexity in engineered infrastructure system: Water distribution network as an example

Science.gov (United States)

Zeng, Fang; Li, Xiang; Li, Ke

2017-02-01

The complex topology and adaptive behavior of infrastructure systems are driven by both self-organization of the demand and rigid engineering solutions. Therefore, engineering complex systems requires a method balancing holism and reductionism. To model the growth of water distribution networks, a complex network model was developed following the combination of local optimization rules and engineering considerations. The demand node generation is dynamic and follows the scaling law of urban growth. The proposed model can generate a water distribution network (WDN) similar to reported real-world WDNs on some structural properties. Comparison with different modeling approaches indicates that a realistic demand node distribution and co-evolvement of demand node and network are important for the simulation of real complex networks. The simulation results indicate that the efficiency of water distribution networks is exponentially affected by the urban growth pattern. On the contrary, the improvement of efficiency by engineering optimization is limited and relatively insignificant. The redundancy and robustness, on another aspect, can be significantly improved through engineering methods.

Processing and characterization of diatom nanoparticles and microparticles as potential source of silicon for bone tissue engineering

Energy Technology Data Exchange (ETDEWEB)

Le, Thi Duy Hanh [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Bonani, Walter [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy); Speranza, Giorgio [Center for Materials and Microsystems, PAM-SE, Fondazione Bruno Kessler, Trento (Italy); Sglavo, Vincenzo; Ceccato, Riccardo [Department of Industrial Engineering, University of Trento, Trento (Italy); Maniglio, Devid; Motta, Antonella [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy); Migliaresi, Claudio, E-mail: claudio.migliaresi@unitn.it [Department of Industrial Engineering, University of Trento, Trento (Italy); BIOtech Research Center and European Institute of Excellence on Tissue Engineering and Regenerative Medicine, Trento (Italy); Interuniversity Consortium for Science and Technology of Materials, Trento Research Unit, Trento (Italy)

2016-02-01

Silicon plays an important role in bone formation and maintenance, improving osteoblast cell function and inducing mineralization. Often, bone deformation and long bone abnormalities have been associated with silica/silicon deficiency. Diatomite, a natural deposit of diatom skeleton, is a cheap and abundant source of biogenic silica. The aim of the present study is to validate the potential of diatom particles derived from diatom skeletons as silicon-donor materials for bone tissue engineering applications. Raw diatomite (RD) and calcined diatomite (CD) powders were purified by acid treatments, and diatom microparticles (MPs) and nanoparticles (NPs) were produced by fragmentation of purified diatoms under alkaline conditions. The influence of processing on the surface chemical composition of purified diatomites was evaluated by X-ray photoelectron spectroscopy (XPS). Diatoms NPs were also characterized in terms of morphology and size distribution by transmission electron microscopy (TEM) and Dynamic light scattering (DLS), while diatom MPs morphology was analyzed by scanning electron microscopy (SEM). Surface area and microporosity of the diatom particles were evaluated by nitrogen physisorption methods. Release of silicon ions from diatom-derived particles was demonstrated using inductively coupled plasma optical emission spectrometry (ICP/OES); furthermore, silicon release kinetic was found to be influenced by diatomite purification method and particle size. Diatom-derived microparticles (MPs) and nanoparticles (NPs) showed limited or no cytotoxic effect in vitro depending on the administration conditions. - Highlights: • Diatomite is a natural source of silica and has a potential as silicon-donor for bone regenerative applications. • Diatom particles derived from purified diatom skeletons were prepared by fragmentation under extreme alkaline condition. • Dissolution of diatom particles derived from diatom skeletons in DI water depend on purification method

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

DEFF Research Database (Denmark)

Ji, Hua

This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides for dem...

Confined Li ion migration in the silicon-graphene complex system: An ab initio investigation

Science.gov (United States)

Wang, Guoqing; Xu, Bo; Shi, Jing; Lei, Xueling; Ouyang, Chuying

2018-04-01

Silicon-Carbon complex systems play an important role in enhancing the performance of Si-based anode materials for Li ion batteries. In this work, the Li migration property of the Silicon-Graphene (Si-Gr) complex systems are investigated by using first-principles calculations. Especially, the effects of graphene coating on the migration of Li ions are discussed in detail. The distance between Si surface and graphene in the Si-Gr system significantly affects the lateral migration of Li ions. With the decrease of the distance from 4.715 to 3.844 Å, the energy barrier of Li ion migration also decreases from 0.115 to 0.067 eV, which are all lower than that of the case without graphene d(0.135 eV). However, smaller distance (3.586 Å) brings the high energy barrier (0.237 eV). Through AIMD calculations, it is found that the graphene coating in the Si-Gr complex system would result in the larger intercalation depths, more uniform distributions, and higher migration coefficients of Li ions. Further calculations of migration coefficients of Li ions at different temperature are used to obtained the activation energy for Li ions migration in the Si-Gr system, which is as low as 0.028 eV. This low activation energy shows that it is easy for Li ions migrating in the Si-Gr system. Our study provided the basically information to understand the migration mechanism of Li ions in Si-C system.

Engineering in-plane silicon nanowire springs for highly stretchable electronics

Science.gov (United States)

Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

2018-01-01

Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Science.gov (United States)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

Energy Technology Data Exchange (ETDEWEB)

Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

1993-05-01

This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Engineering Complex Embedded Systems with State Analysis and the Mission Data System

Science.gov (United States)

Ingham, Michel D.; Rasmussen, Robert D.; Bennett, Matthew B.; Moncada, Alex C.

2004-01-01

It has become clear that spacecraft system complexity is reaching a threshold where customary methods of control are no longer affordable or sufficiently reliable. At the heart of this problem are the conventional approaches to systems and software engineering based on subsystem-level functional decomposition, which fail to scale in the tangled web of interactions typically encountered in complex spacecraft designs. Furthermore, there is a fundamental gap between the requirements on software specified by systems engineers and the implementation of these requirements by software engineers. Software engineers must perform the translation of requirements into software code, hoping to accurately capture the systems engineer's understanding of the system behavior, which is not always explicitly specified. This gap opens up the possibility for misinterpretation of the systems engineer s intent, potentially leading to software errors. This problem is addressed by a systems engineering methodology called State Analysis, which provides a process for capturing system and software requirements in the form of explicit models. This paper describes how requirements for complex aerospace systems can be developed using State Analysis and how these requirements inform the design of the system software, using representative spacecraft examples.

Methods of Si based ceramic components volatilization control in a gas turbine engine

Science.gov (United States)

Garcia-Crespo, Andres Jose; Delvaux, John; Dion Ouellet, Noemie

2016-09-06

A method of controlling volatilization of silicon based components in a gas turbine engine includes measuring, estimating and/or predicting a variable related to operation of the gas turbine engine; correlating the variable to determine an amount of silicon to control volatilization of the silicon based components in the gas turbine engine; and injecting silicon into the gas turbine engine to control volatilization of the silicon based components. A gas turbine with a compressor, combustion system, turbine section and silicon injection system may be controlled by a controller that implements the control method.

Engineering complex orthopaedic tissues via strategic biomimicry.

Science.gov (United States)

Qu, Dovina; Mosher, Christopher Z; Boushell, Margaret K; Lu, Helen H

2015-03-01

The primary current challenge in regenerative engineering resides in the simultaneous formation of more than one type of tissue, as well as their functional assembly into complex tissues or organ systems. Tissue-tissue synchrony is especially important in the musculoskeletal system, wherein overall organ function is enabled by the seamless integration of bone with soft tissues such as ligament, tendon, or cartilage, as well as the integration of muscle with tendon. Therefore, in lieu of a traditional single-tissue system (e.g., bone, ligament), composite tissue scaffold designs for the regeneration of functional connective tissue units (e.g., bone-ligament-bone) are being actively investigated. Closely related is the effort to re-establish tissue-tissue interfaces, which is essential for joining these tissue building blocks and facilitating host integration. Much of the research at the forefront of the field has centered on bioinspired stratified or gradient scaffold designs which aim to recapitulate the structural and compositional inhomogeneity inherent across distinct tissue regions. As such, given the complexity of these musculoskeletal tissue units, the key question is how to identify the most relevant parameters for recapitulating the native structure-function relationships in the scaffold design. Therefore, the focus of this review, in addition to presenting the state-of-the-art in complex scaffold design, is to explore how strategic biomimicry can be applied in engineering tissue connectivity. The objective of strategic biomimicry is to avoid over-engineering by establishing what needs to be learned from nature and defining the essential matrix characteristics that must be reproduced in scaffold design. Application of this engineering strategy for the regeneration of the most common musculoskeletal tissue units (e.g., bone-ligament-bone, muscle-tendon-bone, cartilage-bone) will be discussed in this review. It is anticipated that these exciting efforts will

Engineering Complex Orthopaedic Tissues via Strategic Biomimicry

Science.gov (United States)

Qu, Dovina; Mosher, Christopher Z.; Boushell, Margaret K.; Lu, Helen H.

2014-01-01

The primary current challenge in regenerative engineering resides in the simultaneous formation of more than one type of tissue, as well as their functional assembly into complex tissues or organ systems. Tissue-tissue synchrony is especially important in the musculoskeletal system, whereby overall organ function is enabled by the seamless integration of bone with soft tissues such as ligament, tendon, or cartilage, as well as the integration of muscle with tendon. Therefore, in lieu of a traditional single-tissue system (e.g. bone, ligament), composite tissue scaffold designs for the regeneration of functional connective tissue units (e.g. bone-ligament-bone) are being actively investigated. Closely related is the effort to re-establish tissue-tissue interfaces, which is essential for joining these tissue building blocks and facilitating host integration. Much of the research at the forefront of the field has centered on bioinspired stratified or gradient scaffold designs which aim to recapitulate the structural and compositional inhomogeneity inherent across distinct tissue regions. As such, given the complexity of these musculoskeletal tissue units, the key question is how to identify the most relevant parameters for recapitulating the native structure-function relationships in the scaffold design. Therefore, the focus of this review, in addition to presenting the state-of-the-art in complex scaffold design, is to explore how strategic biomimicry can be applied in engineering tissue connectivity. The objective of strategic biomimicry is to avoid over-engineering by establishing what needs to be learned from nature and defining the essential matrix characteristics that must be reproduced in scaffold design. Application of this engineering strategy for the regeneration of the most common musculoskeletal tissue units (e.g. bone-ligament-bone, muscle-tendon-bone, cartilage-bone) will be discussed in this review. It is anticipated that these exciting efforts will

Modeling the high-frequency complex modulus of silicone rubber using standing Lamb waves and an inverse finite element method.

Science.gov (United States)

Jonsson, Ulf; Lindahl, Olof; Andersson, Britt

2014-12-01

To gain an understanding of the high-frequency elastic properties of silicone rubber, a finite element model of a cylindrical piezoelectric element, in contact with a silicone rubber disk, was constructed. The frequency-dependent elastic modulus of the silicone rubber was modeled by a fourparameter fractional derivative viscoelastic model in the 100 to 250 kHz frequency range. The calculations were carried out in the range of the first radial resonance frequency of the sensor. At the resonance, the hyperelastic effect of the silicone rubber was modeled by a hyperelastic compensating function. The calculated response was matched to the measured response by using the transitional peaks in the impedance spectrum that originates from the switching of standing Lamb wave modes in the silicone rubber. To validate the results, the impedance responses of three 5-mm-thick silicone rubber disks, with different radial lengths, were measured. The calculated and measured transitional frequencies have been compared in detail. The comparison showed very good agreement, with average relative differences of 0.7%, 0.6%, and 0.7% for the silicone rubber samples with radial lengths of 38.0, 21.4, and 11.0 mm, respectively. The average complex elastic moduli of the samples were (0.97 + 0.009i) GPa at 100 kHz and (0.97 + 0.005i) GPa at 250 kHz.

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Structural defects in monocrystalline silicon: from radiation ones to growing and technological

International Nuclear Information System (INIS)

Gerasimenko, N.N.; Pavlyuchenko, M.N.; Dzhamanbalin, K.K.

2001-01-01

The systematical review of properties and conditions of radiation structures in monocrystalline silicon including own defects (elementary and complex, disordered fields) as well as defect-impurity formations is presented. The most typical examples of principle effects influence of known defects on radiation-induced processes (phase transformations, diffusion and heteration and others are considered. Experimental facts and models of silicon radiation amorphization have been analyzed in comparison of state of the radiation amorphization radiation problem of metals and alloys. The up-to-date status of the problem of the radiation defects physics are discussed, including end-of-range -, n+-, rod-like- defects. The phenomenon self-organization in crystals with defects has been considered. The examples of directed using radiation defects merged in independent trend - defects engineering - are given

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Action Memorandum for Decommissioning the Engineering Test Reactor Complex under the Idaho Cleanup Project

International Nuclear Information System (INIS)

A. B. Culp

2007-01-01

This Action Memorandum documents the selected alternative for decommissioning of the Engineering Test Reactor at the Idaho National Laboratory under the Idaho Cleanup Project. Since the missions of the Engineering Test Reactor Complex have been completed, an engineering evaluation/cost analysis that evaluated alternatives to accomplish the decommissioning of the Engineering Test Reactor Complex was prepared and released for public comment. The scope of this Action Memorandum is to encompass the final end state of the Complex and disposal of the Engineering Test Reactor vessel. The selected removal action includes removing and disposing of the vessel at the Idaho CERCLA Disposal Facility and demolishing the reactor building to ground surface

3D bioprinting for engineering complex tissues.

Science.gov (United States)

Mandrycky, Christian; Wang, Zongjie; Kim, Keekyoung; Kim, Deok-Ho

2016-01-01

Bioprinting is a 3D fabrication technology used to precisely dispense cell-laden biomaterials for the construction of complex 3D functional living tissues or artificial organs. While still in its early stages, bioprinting strategies have demonstrated their potential use in regenerative medicine to generate a variety of transplantable tissues, including skin, cartilage, and bone. However, current bioprinting approaches still have technical challenges in terms of high-resolution cell deposition, controlled cell distributions, vascularization, and innervation within complex 3D tissues. While no one-size-fits-all approach to bioprinting has emerged, it remains an on-demand, versatile fabrication technique that may address the growing organ shortage as well as provide a high-throughput method for cell patterning at the micrometer scale for broad biomedical engineering applications. In this review, we introduce the basic principles, materials, integration strategies and applications of bioprinting. We also discuss the recent developments, current challenges and future prospects of 3D bioprinting for engineering complex tissues. Combined with recent advances in human pluripotent stem cell technologies, 3D-bioprinted tissue models could serve as an enabling platform for high-throughput predictive drug screening and more effective regenerative therapies. Copyright © 2015 Elsevier Inc. All rights reserved.

NITRD LSN Workshop Report on Complex Engineered Networks

Data.gov (United States)

Networking and Information Technology Research and Development, Executive Office of the President — Complex engineered networks are everywhere: power grids, Internet, transportation networks, and more. They are being used more than ever before, and yet our...

Research and assessment of competitiveness of large engineering complexes

Directory of Open Access Journals (Sweden)

Krivorotov V.V.

2017-01-01

Full Text Available The urgency of the problem of ensuring the competitiveness of manufacturing and high-tech sectors is shown. Substantiated the decisive role of the large industrial complexes in the formation of the results of the national economy; the author’s interpretation of the concept of “industrial complex” with regard to current economic systems. Current approaches to assessing the competitiveness of enterprises and industrial complexes are analyzed; showing their main advantages and disadvantages. Provides scientific-methodological approach to the study and management of competitiveness of a large industrial complex; the description of its main units is provided. As a Central element of the scientific methodology approach proposed the methodology for assessing the competitiveness of a large industrial complex based on the Pattern-method; a modular system of indicators of competitiveness is developed and its adaptation to a large engineering complexes is made. Using the developed methodology the competitiveness of one of the largest engineering complexes of the group of companies Uralelectrotyazhmash, which is the leading enterprises in electrotechnical industry of Russia is assessed. The evaluation identified the main problems and bottlenecks in the development of these enterprises, and their comparison with leading competitors is provided. According to the results of the study the main conclusions and recommendations are formed.

Solidification phenomena in nickel base brazes containing boron and silicon

International Nuclear Information System (INIS)

Tung, S.K.; Lim, L.C.; Lai, M.O.

1996-01-01

Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

Science.gov (United States)

Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

2018-05-01

The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

NARCIS (Netherlands)

Rahman, R.; Verduijn, J.; Kharche, N.; Lansbergen, G.P.; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

2011-01-01

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding

Chemical functionalization of crystalline silicon surface with complexes of type (M3 (Dpa) 4X2) for the development of electronic devices

International Nuclear Information System (INIS)

Sanchez Zamora, Maria Alejandra

2012-01-01

New surfaces on crystalline silicon (100) diamines have been developed. The diamines 4-aminopyridine, 4-aminomethylpyridine and 1,12-dodecildiame, and self-assembled surfaces Si-diamine-metallic complexes, with cooper (II) acetate and trimetal Cu 3 (dpa) 4 CI 2 were studied. These surfaces are characterized with X-ray photoelectron spectroscopy (XPS), chemical force microscopy (CFM), by contact angle and cyclic voltammetry (CV). The XPS has suggested the formation of diamines monolayers with covalent binding to crystalline silicon, and modification of these surfaces, with metal complexes by coordination chemistry. The CFM has confirmed that surfaces are modified with diamines and cooper (II) acetate, and that were determined different chemical forces according to the change. The contact angle has been suggested that the functionalized surface with 4-aminomethylpyridine has had similar basicity to 1,12-dodecildiame, and more than 4-aminopyridine. This implies that the coordination with metallics complexes is benefited with 4-aminopyridine, which in turn is reflected with electrochemical data. Cyclic voltammetry analysis have showed that silicon surfaces with 4-aminomethylpyridine and 4-aminopyridine with cooper (II) acetate and trimetal have been electrochemically active. Thus, the surfaces could to have interesting applications in molecular electronics. (author) [es

Range of engineering-geological properties for some carbonate rock complexes for Balkan peninsula

International Nuclear Information System (INIS)

Jovanovski, Milorad; Shpago, Azra; Peshevski, Igor

2010-01-01

The Carbonate Rock masses are a geological media with extremely complex states and properties, which has a certain influences on the mechanical and hydraulic behavior during construction and exploitation of engineering structures. Practical aspects of the problem analysis arise from the fact that the areas of Bosnia and Herzegovina, Macedonia and the entire Balkans is characterized by presence of wide areas covered with carbonate complexes, where large number of complex engineering structures have been, or shall be constructed in the future. In this context, their engineering-geological modeling is still a practical and scientific challenge. The analysis of engineering- geological properties is one of the main steps in forming of analytical and geotechnical models for complex rock structures. This article gives a data about the range for these properties, according to the results from an extensive investigation program. Some original correlations and testing results are given and they are compared with some published relations from the world. (Author)

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Emerging Biofabrication Strategies for Engineering Complex Tissue Constructs

DEFF Research Database (Denmark)

Pedde, R. Daniel; Mirani, Bahram; Navaei, Ali

2017-01-01

, outlines the use of common biomaterials and advanced hybrid scaffolds, and describes several design considerations including the structural, physical, biological, and economical parameters that are crucial for the fabrication of functional, complex, engineered tissues. Finally, the applications...... of these biofabrication strategies in neural, skin, connective, and muscle tissue engineering are explored.......The demand for organ transplantation and repair, coupled with a shortage of available donors, poses an urgent clinical need for the development of innovative treatment strategies for long-term repair and regeneration of injured or diseased tissues and organs. Bioengineering organs, by growing...

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Retrograde Melting and Internal Liquid Gettering in Silicon

Energy Technology Data Exchange (ETDEWEB)

Hudelson, Steve; Newman, Bonna K.; Bernardis, Sarah; Fenning, David P.; Bertoni, Mariana I.; Marcus, Matthew A.; Fakra, Sirine C.; Lai, Barry; Buonassisi, Tonio

2011-07-01

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

Green IT engineering concepts, models, complex systems architectures

CERN Document Server

Kondratenko, Yuriy; Kacprzyk, Janusz

2017-01-01

This volume provides a comprehensive state of the art overview of a series of advanced trends and concepts that have recently been proposed in the area of green information technologies engineering as well as of design and development methodologies for models and complex systems architectures and their intelligent components. The contributions included in the volume have their roots in the authors’ presentations, and vivid discussions that have followed the presentations, at a series of workshop and seminars held within the international TEMPUS-project GreenCo project in United Kingdom, Italy, Portugal, Sweden and the Ukraine, during 2013-2015 and at the 1st - 5th Workshops on Green and Safe Computing (GreenSCom) held in Russia, Slovakia and the Ukraine. The book presents a systematic exposition of research on principles, models, components and complex systems and a description of industry- and society-oriented aspects of the green IT engineering. A chapter-oriented structure has been adopted for this book ...

Impurities of oxygen in silicon

International Nuclear Information System (INIS)

Gomes, V.M.S.

1985-01-01

The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

Simulations of Proton Implantation in Silicon Carbide (SiC)

Science.gov (United States)

2016-03-31

Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

A surface code quantum computer in silicon

Science.gov (United States)

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

Science.gov (United States)

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

The Complex Dynamics of Student Engagement in Novel Engineering Design Activities

Science.gov (United States)

McCormick, Mary

In engineering design, making sense of "messy," design situations is at the heart of the discipline (Schon, 1983); engineers in practice bring structure to design situations by organizing, negotiating, and coordinating multiple aspects (Bucciarelli, 1994; Stevens, Johri, & O'Connor, 2014). In classroom settings, however, students are more often given well-defined, content-focused engineering tasks (Jonassen, 2014). These tasks are based on the assumption that elementary students are unable to grapple with the complexity or open-endedness of engineering design (Crismond & Adams, 2012). The data I present in this dissertation suggest the opposite. I show that students are not only able to make sense of, or frame (Goffman, 1974), complex design situations, but that their framings dynamically involve their nascent abilities for engineering design. The context of this work is Novel Engineering, a larger research project that explores using children's literature as an access point for engineering design. Novel Engineering activities are inherently messy: there are characters with needs, settings with implicit constraints, and rich design situations. In a series of three studies, I show how students' framings of Novel Engineering design activities involve their reasoning and acting as beginning engineers. In the first study, I show two students whose caring for the story characters contributes to their stability in framing the task: they identify the needs of their fictional clients and iteratively design a solution to meet their clients' needs. In the second, I show how students' shifting and negotiating framings influence their engineering assumptions and evaluation criteria. In the third, I show how students' coordinating framings involve navigating a design process to meet clients' needs, classroom expectations, and technical requirements. Collectively, these studies contribute to literature by documenting students' productive beginnings in engineering design. The

Silicon nanoparticles: Preparation, properties, and applications

International Nuclear Information System (INIS)

Chang Huan; Sun Shu-Qing

2014-01-01

Silicon nanoparticles have attracted great attention in the past decades because of their intriguing physical properties, active surface state, distinctive photoluminescence and biocompatibility. In this review, we present some of the recent progress in preparation methodologies and surface functionalization approaches of silicon nanoparticles. Further, their promising applications in the fields of energy and electronic engineering are introduced. (invited review — international conference on nanoscience and technology, china 2013)

Complex 3D Vortex Lattice Formation by Phase-Engineered Multiple Beam Interference

Directory of Open Access Journals (Sweden)

Jolly Xavier

2012-01-01

Full Text Available We present the computational results on the formation of diverse complex 3D vortex lattices by a designed superposition of multiple plane waves. Special combinations of multiples of three noncoplanar plane waves with a designed relative phase shift between one another are perturbed by a nonsingular beam to generate various complex 3D vortex lattice structures. The formation of complex gyrating lattice structures carrying designed vortices by means of relatively phase-engineered plane waves is also computationally investigated. The generated structures are configured with both periodic as well as transversely quasicrystallographic basis, while these whirling complex lattices possess a long-range order of designed symmetry in a given plane. Various computational analytical tools are used to verify the presence of engineered geometry of vortices in these complex 3D vortex lattices.

New software engineering paradigm based on complexity science an introduction to NSE

CERN Document Server

Xiong, Jay

2011-01-01

This book describes a revolution in software engineering - the Nonlinear Software Engineering paradigm, which complies with the essential principles of complexity science and can help double productivity, halve costs and reduce defects in software products.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Science.gov (United States)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

Energy Technology Data Exchange (ETDEWEB)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

1995-02-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

International Nuclear Information System (INIS)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C.

1995-01-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0 degrees C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0 degrees C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length

Tunable complex-valued multi-tap microwave photonic filter based on single silicon-on-insulator microring resonator.

Science.gov (United States)

Lloret, Juan; Sancho, Juan; Pu, Minhao; Gasulla, Ivana; Yvind, Kresten; Sales, Salvador; Capmany, José

2011-06-20

A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window based scenarios are evaluated for improving the filter performance in terms of the side-lobe level.

Indium-hydrogen complexes in silicon and germanium under compression and tension

International Nuclear Information System (INIS)

Marx, G.; Vianden, R.

1996-01-01

The response of hydrogen-acceptor complexes in silicon and germanium to the application of uniaxial mechanical stress was studied by means of the perturbed angular correlation technique. This hyperfine interaction technique is sensitive to the microscopic structure of the immediate lattice environment of the probe atom. For the measurements, the probe 111 In was introduced into Si and Ge crystals by ion implantation at room temperature. After annealing, the radioactive probe atom 111 In acts as an acceptor in the elemental semiconductors Si and Ge and as such can easily be passivated by hydrogen indiffusion. The resulting In-H complex was subsequently exposed to uniaxial compressive and tensile stress, which was produced by bending the crystals along the three major lattice directions left angle 100 right angle, left angle 110 right angle and left angle 111 right angle. It was found that the application of uniaxial mechanical stress causes no change in the population of the four equivalent bond centred H sites surrounding the In acceptor. Evidence was found for a large mismatch of the lattice parameters between the passivated In implanted layer and the surrounding pure Si. (orig.)

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Engineering complex tissue-like microgel arrays for evaluating stem cell differentiation

DEFF Research Database (Denmark)

Guermani, Enrico; Shaki, Hossein; Mohanty, Soumyaranjan

2016-01-01

Development of tissue engineering scaffolds with native-like biology and microarchitectures is a prerequisite for stem cell mediated generation of off-the-shelf-tissues. So far, the field of tissue engineering has not full-filled its grand potential of engineering such combinatorial scaffolds...... for engineering functional tissues. This is primarily due to the many challenges associated with finding the right microarchitectures and ECM compositions for optimal tissue regeneration. Here, we have developed a new microgel array to address this grand challenge through robotic printing of complex stem cell...... platform will be used for high-throughput identification of combinatorial and native-like scaffolds for tissue engineering of functional organs....

Complex radiological diagnosis of a breast cancer at women after augmentation mammоplasty of silicone gel implants

Directory of Open Access Journals (Sweden)

T. A. Shumakova

2014-01-01

Full Text Available One of leading problems of mammology is early diagnostics of a breast cancer. The work purpose studying of opportunities of a complex of radiological research techniques in diagnostics of a breast cancer at women after augmentation mammoplasty silicone gel implants. By results of сomplex kliniko-radiological examination of 630 women aged from 18 till 72 years (middle age made 35 ± 0.43 years with 1260 implants the breast cancer was revealed at 7 (1.1 % patients. The invasive pro-current cancer with local widespread type of body height of tumoral knot is histologically diagnosed. Sensitivity and specificity of methods of radiodiagnosis in identification of a cancer of mammary glands at women after endoprosthesis replacement made mammography – 28.6 % and 66.1 %, ultrasonography – 71.4 % and 85.7 %, magnetic resonance imaging – 85.7 % and 98.2 %, respectively. Thus, complex application of radiology research techniques raises level of diagnostics of breast cancer at patients after augmentation mammoplasty silicone gel implants that allows to choose an adequate method of treatment.

Final anatomic and visual outcomes appear independent of duration of silicone oil intraocular tamponade in complex retinal detachment surgery.

Science.gov (United States)

Rhatigan, Maedbh; McElnea, Elizabeth; Murtagh, Patrick; Stephenson, Kirk; Harris, Elaine; Connell, Paul; Keegan, David

2018-01-01

To report anatomic and visual outcomes following silicone oil removal in a cohort of patients with complex retinal detachment, to determine association between duration of tamponade and outcomes and to compare patients with oil removed and those with oil in situ in terms of demographic, surgical and visual factors. We reported a four years retrospective case series of 143 patients with complex retinal detachments who underwent intraocular silicone oil tamponade. Analysis between anatomic and visual outcomes, baseline demographics, duration of tamponade and number of surgical procedures were carried out using Fisher's exact test and unpaired two-tailed t -test. One hundred and six patients (76.2%) had undergone silicone oil removal at the time of review with 96 patients (90.6%) showing retinal reattachment following oil removal. Duration of tamponade was not associated with final reattachment rate or with a deterioration in best corrected visual acuity (BCVA). Patients with oil removed had a significantly better baseline and final BCVA compared to those under oil tamponade ( P =0.0001, <0.0001 respectively). Anatomic and visual outcomes in this cohort are in keeping with those reported in the literature. Favorable outcomes were seen with oil removal but duration of oil tamponade does not affect final attachment rate with modern surgical techniques and should be managed on a case by case basis.

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

Energy Technology Data Exchange (ETDEWEB)

Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

2016-12-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

International Nuclear Information System (INIS)

Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

2016-01-01

Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

Controlling the flow of light with silicon nanostructures

International Nuclear Information System (INIS)

Park, W

2010-01-01

Silicon is an important material for integrated photonics applications. High refractive index and transparency in the infrared region makes it an ideal platform to implement nanostructures for novel optical devices. We fabricated silicon photonic crystals and experimentally demonstrated negative refraction and self-collimation. We also used heterodyne near-field scanning optical microscope to directly visualize the anomalous wavefronts. When the periodicity is much smaller than wavelength, silicon photonic crystal can be described by the effective medium theory. By engineering effective refractive index with silicon nanorod size, we demonstrated an all-dielectric cloak structure which can hide objects in front of a highly reflecting plane. The work discussed in this review shows the powerful design flexibility and versatility of silicon nanostructures

Study of spectral properties of bis(1,10-phenanthroline) silicon hexacoordinated complexes by density functional theory

Science.gov (United States)

Irgibaeva, Irina; Aldongarov, Anuar; Barashkov, Nikolay; Schmedake, Thomas

Applying ab initio method the structures and UV-vis spectra of silicon hexacoordinated compound [Si(phen)2(OMe)2]I2 and it's nitrate [Si(phen)2(OMe)2](NO3)2 were calculated. On the ground of comparison of theoretical and experimental data (1H NMR and electronic absorption spectra) it was shown that the theoretical method B3LYP/LanL2DZ we have used describes bis(1,10-phenanthroline) silicon complexes reasonably well. On the basis of TDDFT calculations at B3LYP/LanL2DZ level it is predicted that [Si(phen)2(OMe)2]I2 compound has charge transfer band in UV-vis spectrum at 557 nm which is associated with electron transfer from I- to phen ligand while [Si(phen)2(OMe)2](NO3)2 doesn't have one. The absence of this band in the observed spectrum of the [Si(phen)2(OMe)2]I2 complex methanol solution (10-5 M) is explained by the dissociation of the complex into ions [Si(phen)2(OMe)2]2+ and 2I-. We assume that this charge transfer band corresponds to peak at 400 nm in UV-vis spectrum of [Si(phen)2(OMe)2]I2 thin film. The missing of such bands in UV-vis spectrum of nitrate [Si(phen)2(OMe)2](NO3)2 film is explained by n rarr p* nature of these transitions. Significant error in prediction of charge transfer band energy is due to failure of TDDFT method to yield underestimated charge transfer electronic energies.

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

Directory of Open Access Journals (Sweden)

Brian Ford

2017-04-01

Full Text Available The following study focuses on the photoluminescence (PL enhancement of chemically synthesized silicon oxycarbide (SiCxOy thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD, and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2 ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

Advances in complex societal, environmental and engineered systems

CERN Document Server

Essaaidi, Mohammad

2017-01-01

This book addresses recent technological progress that has led to an increased complexity in many natural and artificial systems. The resulting complexity research due to the emergence of new properties and spatio-temporal interactions among a large number of system elements - and between the system and its environment - is the primary focus of this text. This volume is divided into three parts: Part one focuses on societal and ecological systems, Part two deals with approaches for understanding, modeling, predicting and mastering socio-technical systems, and Part three includes real-life examples. Each chapter has its own special features; it is a self-contained contribution of distinguished experts working on different fields of science and technology relevant to the study of complex systems. Advances in Complex Systems of Contemporary Reality: Societal, Environmental and Engineered Systems will provide postgraduate students, researchers and managers with qualitative and quantitative methods for handling th...

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

NARCIS (Netherlands)

Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

2016-01-01

A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

Metric-driven Robust Design – Robustness Quantification of Complex Engineering Systems

DEFF Research Database (Denmark)

Göhler, Simon Moritz

2017-01-01

by the Danish Council for Strategic Research. Other supporters of the project have been MAN Diesel & Turbo A/S, DTU Mechanical Engineering, DTU Chemical Engineering, Sandia National Laboratories USA, Norwegian University of Science & Technology (NTNU) and University of Nottingham, Malaysia Campus......This PhD dissertation was carried out at the Technical University of Denmark in the Department of Mechanical Engineering and has been supervised by Associate Professor Anders Ivarsson and co-supervised by Professor Jesper Schramm. The project has been a part of the RADIADE project funded....... The continuing stringency of emission regulations for marine diesel engines forces a deeper understanding of the complex physical processes occurring inside the engine cylinder. A deeper understanding can lead to higher accuracy of predictive numerical models, thereby enabling evaluation of multiple engine...

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Complex Adaptive System of Systems (CASoS) Engineering Applications. Version 1.0.

Energy Technology Data Exchange (ETDEWEB)

Linebarger, John Michael; Maffitt, S. Louise (New Mexico Institute of Mining and Technology, Albuquerque, NM); Glass, Robert John, Jr.; Beyeler, Walter Eugene; Brown, Theresa Jean; Ames, Arlo Leroy

2011-10-01

Complex Adaptive Systems of Systems, or CASoS, are vastly complex eco-socio-economic-technical systems which we must understand to design a secure future for the nation and the world. Perturbations/disruptions in CASoS have the potential for far-reaching effects due to highly-saturated interdependencies and allied vulnerabilities to cascades in associated systems. The Phoenix initiative approaches this high-impact problem space as engineers, devising interventions (problem solutions) that influence CASoS to achieve specific aspirations. CASoS embody the world's biggest problems and greatest opportunities: applications to real world problems are the driving force of our effort. We are developing engineering theory and practice together to create a discipline that is grounded in reality, extends our understanding of how CASoS behave, and allows us to better control those behaviors. Through application to real-world problems, Phoenix is evolving CASoS Engineering principles while growing a community of practice and the CASoS engineers to populate it.

Silicon Photonics II Components and Integration

CERN Document Server

Lockwood, David J

2011-01-01

This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

Engineered porous silicon counter electrodes for high efficiency dye-sensitized solar cells.

Science.gov (United States)

Erwin, William R; Oakes, Landon; Chatterjee, Shahana; Zarick, Holly F; Pint, Cary L; Bardhan, Rizia

2014-06-25

In this work, we demonstrate for the first time, the use of porous silicon (P-Si) as counter electrodes in dye-sensitized solar cells (DSSCs) with efficiencies (5.38%) comparable to that achieved with platinum counter electrodes (5.80%). To activate the P-Si for triiodide reduction, few layer carbon passivation is utilized to enable electrochemical stability of the silicon surface. Our results suggest porous silicon as a promising sustainable and manufacturable alternative to rare metals for electrochemical solar cells, following appropriate surface modification.

Visualization and simulation of complex flows in biomedical engineering

CERN Document Server

Imai, Yohsuke; Ishikawa, Takuji; Oliveira, Mónica

2014-01-01

This book focuses on the most recent advances in the application of visualization and simulation methods to understand the flow behavior of complex fluids used in biomedical engineering and other related fields. It shows the physiological flow behavior in large arteries, microcirculation, respiratory systems and in biomedical microdevices.

A Model-Based Approach to Engineering Behavior of Complex Aerospace Systems

Science.gov (United States)

Ingham, Michel; Day, John; Donahue, Kenneth; Kadesch, Alex; Kennedy, Andrew; Khan, Mohammed Omair; Post, Ethan; Standley, Shaun

2012-01-01

One of the most challenging yet poorly defined aspects of engineering a complex aerospace system is behavior engineering, including definition, specification, design, implementation, and verification and validation of the system's behaviors. This is especially true for behaviors of highly autonomous and intelligent systems. Behavior engineering is more of an art than a science. As a process it is generally ad-hoc, poorly specified, and inconsistently applied from one project to the next. It uses largely informal representations, and results in system behavior being documented in a wide variety of disparate documents. To address this problem, JPL has undertaken a pilot project to apply its institutional capabilities in Model-Based Systems Engineering to the challenge of specifying complex spacecraft system behavior. This paper describes the results of the work in progress on this project. In particular, we discuss our approach to modeling spacecraft behavior including 1) requirements and design flowdown from system-level to subsystem-level, 2) patterns for behavior decomposition, 3) allocation of behaviors to physical elements in the system, and 4) patterns for capturing V&V activities associated with behavioral requirements. We provide examples of interesting behavior specification patterns, and discuss findings from the pilot project.

Selected Topics on Managing Complexity and Information Systems Engineering: Editorial Introduction to Issue 8 of CSIMQ

Directory of Open Access Journals (Sweden)

Peter Forbrig

2016-10-01

Full Text Available Business process models greatly contribute to analyze and understand the activities of enterprises. However, it is still a challenge to cope with the complexity of systems specifications and their requirements. This issue of the journal of Complex Systems Informatics and Modeling (CSIMQ presents papers that discuss topics on managing complexity and information systems engineering. The papers are extended versions of selected papers from the workshop on Continuous Requirements Engineering held at the requirements engineering conference REFSQ 2016 in Gothenburg, the workshop on Managed Complexity held at the business informatics conference BIR 2016 in Prague, and the CAiSE 2016 Forum held in Ljubljana.

Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

Directory of Open Access Journals (Sweden)

Cosimo Lacava

2017-01-01

Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

Gold and Platinum in Silicon - Isolated Impurities Complexes

CERN Multimedia

Mcglynn, P

2002-01-01

%IS357 :\\\\ \\\\ Gold and platinum impurities in silicon are exploited for the control of minority carrier lifetimes, and this important feature has resulted in sustained research interest over several decades. Although the properties of isolated substitutional Au~atoms are well understood, this is not the case for Pt. Considerable uncertainty exists regarding the nature of several Pt related defects observed in Electron Paramagnetic Resonance~(EPR) and Photo~Luminescence~(PL). One of the objectives of this experiment is to exploit the transformation of radioactive Au isotopes as a means of producing specific Pt centres, and to use our thorough knowledge of Au in silicon to guide in the interpretation of data obtained for the centres when they transform to Pt.\\\\ \\\\ In addition to isolated impurities, the experiment also addresses the question of pairs of atoms formed by Au and Pt. Studies of these impurity pairs have been reported, but the benefits of a direct comparison of the defects in both the Au and Pt form...

Silicon technologies ion implantation and thermal treatment

CERN Document Server

Baudrant, Annie

2013-01-01

The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Department of Energy environmental management complex-wide integration using systems engineering

International Nuclear Information System (INIS)

Fairbourn, P.

1997-01-01

A systems engineering approach was successfully used to recommend changes to environmental management activities across the DOE Complex. A team of technical experts and systems engineers developed alternatives that could save tax payers billions of dollars if the barriers are removed to allow complete implementation. The alternatives are technically-based and defensible, and are being worked through the stakeholder review process. The integration process and implementing project structure are both discussed

Inorganic Glue Enabling High Performance of Silicon Particles as Lithium Ion Battery Anode

KAUST Repository

Cui, Li-Feng; Hu, Liangbing; Wu, Hui; Choi, Jang Wook; Cui, Yi

2011-01-01

overcome the pulverization problem, however these nano-engineered silicon anodes usually involve very expensive processes and have difficulty being applied in commercial lithium ion batteries. In this study, we report a novel method using amorphous silicon

Self-Organization during Friction in Complex Surface Engineered Tribosystems

Directory of Open Access Journals (Sweden)

Ben D. Beake

2010-02-01

Full Text Available Self-organization during friction in complex surface engineered tribosystems is investigated. The probability of self-organization in these complex tribosystems is studied on the basis of the theoretical concepts of irreversible thermodynamics. It is shown that a higher number of interrelated processes within the system result in an increased probability of self-organization. The results of this thermodynamic model are confirmed by the investigation of the wear performance of a novel Ti0.2Al0.55Cr0.2Si0.03Y0.02N/Ti0.25Al0.65Cr0.1N (PVD coating with complex nano-multilayered structure under extreme tribological conditions of dry high-speed end milling of hardened H13 tool steel.

Human aortic endothelial cell morphology influenced by topography of porous silicon substrates.

Science.gov (United States)

Formentín, Pilar; Catalán, Úrsula; Fernández-Castillejo, Sara; Alba, Maria; Baranowska, Malgorzata; Solà, Rosa; Pallarès, Josep; Marsal, Lluís F

2015-10-01

Porous silicon has received much attention because of its optical properties and for its usefulness in cell-based biosensing, drug delivery, and tissue engineering applications. Surface properties of the biomaterial are associated with cell adhesion and with proliferation, migration, and differentiation. The present article analyzes the behavior of human aortic endothelial cells in macro- and nanoporous collagen-modified porous silicon samples. On both substrates, cells are well adhered and numerous. Confocal microscopy and scanning electron microscopy were employed to study the effects of porosity on the morphology of the cells. On macroporous silicon, filopodia is not observed but the cell spreads on the surface, increasing the lamellipodia surface which penetrates the macropore. On nanoporous silicon, multiple filopodia were found to branch out from the cell body. These results demonstrate that the pore size plays a key role in controlling the morphology and growth rate of human aortic endothelial cells, and that these forms of silicon can be used to control cell development in tissue engineering as well as in basic cell biology research. © The Author(s) 2015.

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

Science.gov (United States)

Trzynadlowski, Bart

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-effective solar cells continues to push the frontiers of process technology. Fabrication of silicon devices requires extremely precise control of impurities and crystallographic defects. Failure to do so not only reduces performance, efficiency, and yield, it threatens the very survival of commercial enterprises in today's fiercely competitive and price-sensitive global market. The presence of oxygen in silicon is an unavoidable consequence of the Czochralski process, which remains the most popular method for large-scale production of single-crystal silicon. Oxygen precipitates that form during thermal processing cause distortion of the surrounding silicon lattice and can lead to the formation of dislocation loops. Localized deformation caused by both of these defects introduces potential wells that trap diffusing impurities such as metal atoms, which is highly desirable if done far away from sensitive device regions. Unfortunately, dislocations also reduce the mechanical strength of silicon, which can cause wafer warpage and breakage. Engineers must negotiate this and other complex tradeoffs when designing fabrication processes. Accomplishing this in a complex, modern process involving a large number of thermal steps is impossible without the aid of computational models. In this dissertation, new models for oxygen precipitation and dislocation loop evolution are described. An oxygen model using kinetic rate equations to evolve the complete precipitate size distribution was developed first. This was then used to create a reduced model tracking only the moments of the size distribution. The moment-based model was found to run significantly faster than its full counterpart while accurately capturing the evolution of oxygen precipitates. The reduced model was fitted to experimental data and a sensitivity analysis was performed to assess the robustness of the results. Source

Complex Adaptive Systems of Systems (CASoS) engineering and foundations for global design.

Energy Technology Data Exchange (ETDEWEB)

Brodsky, Nancy S.; Finley, Patrick D.; Beyeler, Walter Eugene; Brown, Theresa Jean; Linebarger, John Michael; Moore, Thomas W.; Glass, Robert John, Jr.; Maffitt, S. Louise; Mitchell, Michael David; Ames, Arlo Leroy

2012-01-01

Complex Adaptive Systems of Systems, or CASoS, are vastly complex ecological, sociological, economic and/or technical systems which must be recognized and reckoned with to design a secure future for the nation and the world. Design within CASoS requires the fostering of a new discipline, CASoS Engineering, and the building of capability to support it. Towards this primary objective, we created the Phoenix Pilot as a crucible from which systemization of the new discipline could emerge. Using a wide range of applications, Phoenix has begun building both theoretical foundations and capability for: the integration of Applications to continuously build common understanding and capability; a Framework for defining problems, designing and testing solutions, and actualizing these solutions within the CASoS of interest; and an engineering Environment required for 'the doing' of CASoS Engineering. In a secondary objective, we applied CASoS Engineering principles to begin to build a foundation for design in context of Global CASoS

Organizational Influences on Interdisciplinary Interactions during Research and Design of Large-Scale Complex Engineered Systems

Science.gov (United States)

McGowan, Anna-Maria R.; Seifert, Colleen M.; Papalambros, Panos Y.

2012-01-01

The design of large-scale complex engineered systems (LaCES) such as an aircraft is inherently interdisciplinary. Multiple engineering disciplines, drawing from a team of hundreds to thousands of engineers and scientists, are woven together throughout the research, development, and systems engineering processes to realize one system. Though research and development (R&D) is typically focused in single disciplines, the interdependencies involved in LaCES require interdisciplinary R&D efforts. This study investigates the interdisciplinary interactions that take place during the R&D and early conceptual design phases in the design of LaCES. Our theoretical framework is informed by both engineering practices and social science research on complex organizations. This paper provides preliminary perspective on some of the organizational influences on interdisciplinary interactions based on organization theory (specifically sensemaking), data from a survey of LaCES experts, and the authors experience in the research and design. The analysis reveals couplings between the engineered system and the organization that creates it. Survey respondents noted the importance of interdisciplinary interactions and their significant benefit to the engineered system, such as innovation and problem mitigation. Substantial obstacles to interdisciplinarity are uncovered beyond engineering that include communication and organizational challenges. Addressing these challenges may ultimately foster greater efficiencies in the design and development of LaCES and improved system performance by assisting with the collective integration of interdependent knowledge bases early in the R&D effort. This research suggests that organizational and human dynamics heavily influence and even constrain the engineering effort for large-scale complex systems.

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

KAUST Repository

Montes Muñoz, Enrique

2017-01-24

We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination

Energy Technology Data Exchange (ETDEWEB)

Borowik, Ł., E-mail: Lukasz.Borowik@cea.fr [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Chevalier, N.; Mariolle, D.; Martinez, E.; Bertin, F.; Chabli, A.; Barbé, J.-C. [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2013-04-01

Actually, thermally induced thin-films dewetting silicon in the silicon-on-insulator is a way to obtain silicon agglomerates with a size and a density fixed by the silicon film thickness. In this paper we report a new method to monitor both the size and the density of the Si agglomerates thanks to the deposition of a carbon-like layer. We show that using a 5-nm thick layer of silicon and additional ≤1-nm carbonated layer; we obtain agglomerates sizes ranging from 35 nm to 60 nm with respectively an agglomerate density ranging from 38 μm{sup −2} to 18 μm{sup −2}. Additionally, for the case of strained silicon films an alternative dewetting mechanism can be induced by monitoring the chemical composition of the sample surface.

Phoenix : Complex Adaptive System of Systems (CASoS) engineering version 1.0.

Energy Technology Data Exchange (ETDEWEB)

Moore, Thomas W.; Quach, Tu-Thach; Detry, Richard Joseph; Conrad, Stephen Hamilton; Kelic, Andjelka; Starks, Shirley J.; Beyeler, Walter Eugene; Brodsky, Nancy S.; Verzi, Stephen J.; Brown, Theresa Jean; Glass, Robert John, Jr.; Sunderland, Daniel J.; Mitchell, Michael David; Ames, Arlo Leroy; Maffitt, S. Louise; Finley, Patrick D.; Russell, Eric Dean; Zagonel, Aldo A.; Reedy, Geoffrey E.; Mitchell, Roger A.; Corbet, Thomas Frank, Jr.; Linebarger, John Michael

2011-08-01

Complex Adaptive Systems of Systems, or CASoS, are vastly complex ecological, sociological, economic and/or technical systems which we must understand to design a secure future for the nation and the world. Perturbations/disruptions in CASoS have the potential for far-reaching effects due to pervasive interdependencies and attendant vulnerabilities to cascades in associated systems. Phoenix was initiated to address this high-impact problem space as engineers. Our overarching goals are maximizing security, maximizing health, and minimizing risk. We design interventions, or problem solutions, that influence CASoS to achieve specific aspirations. Through application to real-world problems, Phoenix is evolving the principles and discipline of CASoS Engineering while growing a community of practice and the CASoS engineers to populate it. Both grounded in reality and working to extend our understanding and control of that reality, Phoenix is at the same time a solution within a CASoS and a CASoS itself.

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

On-site customization of silicone stents: towards optimal palliation of complex airway conditions.

Science.gov (United States)

Breen, David P; Dutau, Hervé

2009-01-01

Stents may be indicated as treatment of benign and malignant conditions of the central airways. Occasionally, aberrant and/or distorted airways secondary to therapy or surgery may preclude the use of commercially manufactured stents. The customization of stents is well described for nonpulmonary diseases, but to date there are only limited data in the literature on prosthesis customization for airway disease. To review all the different techniques and indications of on-site silicone stent customizations and their related complications. A retrospective study was undertaken to identify all patients who underwent treatment with a silicone stent which was customized on site by the physician. The study included subjects treated during an 8-year period. Forty-nine on-site customizations were performed in 43 patients (34 males, mean age 63 +/- 5.2 years). Stent customization was performed in 5.4% of the cases. Stent customization was performed for malignant and benign disease in 35 (81.3%) and 8 (18.7%) cases, respectively. In all cases, the stent deployed successfully and performed well while in situ. Stent manipulation did not increase complications. Customization of airway stents by the physician can lead to successful stenting of difficult airway lesions with a good short-term safety profile. Standard commercially available stents may have resulted in suboptimal management of complex airway pathologies. A prospective study is warranted to further investigate the safety profile and complications associated with stent customization. Copyright 2009 S. Karger AG, Basel.

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Microscopic models of impurities in silicon

International Nuclear Information System (INIS)

Assali, L.V.C.

1985-01-01

The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

Can Models Capture the Complexity of the Systems Engineering Process?

Science.gov (United States)

Boppana, Krishna; Chow, Sam; de Weck, Olivier L.; Lafon, Christian; Lekkakos, Spyridon D.; Lyneis, James; Rinaldi, Matthew; Wang, Zhiyong; Wheeler, Paul; Zborovskiy, Marat; Wojcik, Leonard A.

Many large-scale, complex systems engineering (SE) programs have been problematic; a few examples are listed below (Bar-Yam, 2003 and Cullen, 2004), and many others have been late, well over budget, or have failed: Hilton/Marriott/American Airlines system for hotel reservations and flights; 1988-1992; 125 million; "scrapped"

Silicon Nanowires for All-Optical Signal Processing in Optical Communication

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2012-01-01

Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Hybrid III-V Silicon Lasers

Science.gov (United States)

Bowers, John

2014-03-01

Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

First results from the SLD silicon calorimeters

International Nuclear Information System (INIS)

Berridge, S.C.; Bugg, W.M.; Kroeger, R.S.; Weidemann, A.W.; White, S.L.

1992-07-01

The small-angle calorimeters of the SLD were successfully operated during the recent SLC engineering run. The Luminosity Monitor and Small-Angle Tagger (LMSAT) covers the angular region between 28 and 68 milliradians from the beam axis, while the Medium-Angle Silicon Calorimeter (MASC) covers the 68--190 milliradian region. Both are silicon-tungsten sampling calorimeters; the LMSAT employs 23 layers of 0.86 X 0 sampling, while the MASC has 10 layers of 1.74 X 0 sampling. We present results from the first run of the SLC with the SLD on beamline

Vibrational modes of porous silicon

International Nuclear Information System (INIS)

Sabra, M.; Naddaf, M.

2012-01-01

On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

Robust Environmental Barrier Coatings for Silicon Nitride, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Silicon based ceramics are the leading candidates for the high temperature structural components of the advanced propulsion engines. For such applications, one key...

An Agent-Based Optimization Framework for Engineered Complex Adaptive Systems with Application to Demand Response in Electricity Markets

Science.gov (United States)

Haghnevis, Moeed

The main objective of this research is to develop an integrated method to study emergent behavior and consequences of evolution and adaptation in engineered complex adaptive systems (ECASs). A multi-layer conceptual framework and modeling approach including behavioral and structural aspects is provided to describe the structure of a class of engineered complex systems and predict their future adaptive patterns. The approach allows the examination of complexity in the structure and the behavior of components as a result of their connections and in relation to their environment. This research describes and uses the major differences of natural complex adaptive systems (CASs) with artificial/engineered CASs to build a framework and platform for ECAS. While this framework focuses on the critical factors of an engineered system, it also enables one to synthetically employ engineering and mathematical models to analyze and measure complexity in such systems. In this way concepts of complex systems science are adapted to management science and system of systems engineering. In particular an integrated consumer-based optimization and agent-based modeling (ABM) platform is presented that enables managers to predict and partially control patterns of behaviors in ECASs. Demonstrated on the U.S. electricity markets, ABM is integrated with normative and subjective decision behavior recommended by the U.S. Department of Energy (DOE) and Federal Energy Regulatory Commission (FERC). The approach integrates social networks, social science, complexity theory, and diffusion theory. Furthermore, it has unique and significant contribution in exploring and representing concrete managerial insights for ECASs and offering new optimized actions and modeling paradigms in agent-based simulation.

Slim edges in double-sided silicon 3D detectors

International Nuclear Information System (INIS)

Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

2012-01-01

Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

Intravitreal properties of porous silicon photonic crystals

Science.gov (United States)

Cheng, L; Anglin, E; Cunin, F; Kim, D; Sailor, M J; Falkenstein, I; Tammewar, A; Freeman, W R

2009-01-01

Aim To determine the suitability of porous silicon photonic crystals for intraocular drug-delivery. Methods A rugate structure was electrochemically etched into a highly doped p-type silicon substrate to create a porous silicon film that was subsequently removed and ultrasonically fractured into particles. To stabilise the particles in aqueous media, the silicon particles were modified by surface alkylation (using thermal hydrosilylation) or by thermal oxidation. Unmodified particles, hydrosilylated particles and oxidised particles were injected into rabbit vitreous. The stability and toxicity of each type of particle were studied by indirect ophthalmoscopy, biomicroscopy, tonometry, electroretinography (ERG) and histology. Results No toxicity was observed with any type of the particles during a period of >4 months. Surface alkylation led to dramatically increased intravitreal stability and slow degradation. The estimated vitreous half-life increased from 1 week (fresh particles) to 5 weeks (oxidised particles) and to 16 weeks (hydrosilylated particles). Conclusion The porous silicon photonic crystals showed good biocompatibility and may be used as an intraocular drug-delivery system. The intravitreal injectable porous silicon photonic crystals may be engineered to host a variety of therapeutics and achieve controlled drug release over long periods of time to treat chronic vitreoretinal diseases. PMID:18441177

Second-harmonic generation in substoichiometric silicon nitride layers

Science.gov (United States)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Ultra-high-speed wavelength conversion in a silicon photonic chip

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

Nonlinear optical properties of silicon waveguides

International Nuclear Information System (INIS)

Tsang, H K; Liu, Y

2008-01-01

Recent work on two-photon absorption (TPA), stimulated Raman scattering (SRS) and optical Kerr effect in silicon-on-insulator (SOI) waveguides is reviewed and some potential applications of these optical nonlinearities, including silicon-based autocorrelation detectors, optical amplifiers, high speed optical switches, optical wavelength converters and self-phase modulation (SPM), are highlighted. The importance of free carriers generated by TPA in nonlinear devices is discussed, and a generalized definition of the nonlinear effective length to cater for nonlinear losses is proposed. How carrier lifetime engineering, and in particular the use of helium ion implantation, can enhance the nonlinear effective length for nonlinear devices is also discussed

Radio-frequency integrated-circuit engineering

CERN Document Server

Nguyen, Cam

2015-01-01

Radio-Frequency Integrated-Circuit Engineering addresses the theory, analysis and design of passive and active RFIC's using Si-based CMOS and Bi-CMOS technologies, and other non-silicon based technologies. The materials covered are self-contained and presented in such detail that allows readers with only undergraduate electrical engineering knowledge in EM, RF, and circuits to understand and design RFICs. Organized into sixteen chapters, blending analog and microwave engineering, Radio-Frequency Integrated-Circuit Engineering emphasizes the microwave engineering approach for RFICs. Provide

Electrical engineer's reference book

CERN Document Server

Laughton, M A

1985-01-01

Electrical Engineer's Reference Book, Fourteenth Edition focuses on electrical engineering. The book first discusses units, mathematics, and physical quantities, including the international unit system, physical properties, and electricity. The text also looks at network and control systems analysis. The book examines materials used in electrical engineering. Topics include conducting materials, superconductors, silicon, insulating materials, electrical steels, and soft irons and relay steels. The text underscores electrical metrology and instrumentation, steam-generating plants, turbines

Oxygen measurements in thin ribbon silicon

Energy Technology Data Exchange (ETDEWEB)

Hyland, S L; Ast, D G; Baghdadi, A

1987-03-01

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10% along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO/sub 2/ developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Studies on combined model based on functional objectives of large scale complex engineering

Science.gov (United States)

Yuting, Wang; Jingchun, Feng; Jiabao, Sun

2018-03-01

As various functions were included in large scale complex engineering, and each function would be conducted with completion of one or more projects, combined projects affecting their functions should be located. Based on the types of project portfolio, the relationship of projects and their functional objectives were analyzed. On that premise, portfolio projects-technics based on their functional objectives were introduced, then we studied and raised the principles of portfolio projects-technics based on the functional objectives of projects. In addition, The processes of combined projects were also constructed. With the help of portfolio projects-technics based on the functional objectives of projects, our research findings laid a good foundation for management of large scale complex engineering portfolio management.

A Complex Formula: Girls and Women in Science, Technology, Engineering and Mathematics in Asia

Science.gov (United States)

Salmon, Aliénor

2015-01-01

What factors might be causing the low participation of women Science, Technology, Engineering and Mathematics (STEM) fields? What can be done to attract more girls and women into STEM in Asia and beyond? The report, "A Complex Formula. Girls and Women in Science, Technology, Engineering and Mathematics in Asia", answers three fundamental…

Synthesis of carbon fibre-reinforced, silicon carbide composites by ...

Indian Academy of Sciences (India)

carbon fibre (Cf) reinforced, silicon carbide matrix composites which are ... eral applications, such as automotive brakes, high-efficiency engine systems, ... The PIP method is based on the use of organo metallic pre-ceramic precursors.

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Aligned carbon nanotube-silicon sheets: a novel nano-architecture for flexible lithium ion battery electrodes.

Science.gov (United States)

Fu, Kun; Yildiz, Ozkan; Bhanushali, Hardik; Wang, Yongxin; Stano, Kelly; Xue, Leigang; Zhang, Xiangwu; Bradford, Philip D

2013-09-25

Aligned carbon nanotube sheets provide an engineered scaffold for the deposition of a silicon active material for lithium ion battery anodes. The sheets are low-density, allowing uniform deposition of silicon thin films while the alignment allows unconstrained volumetric expansion of the silicon, facilitating stable cycling performance. The flat sheet morphology is desirable for battery construction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

International Nuclear Information System (INIS)

Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1996-01-01

Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

On nanostructured silicon success

DEFF Research Database (Denmark)

Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

2016-01-01

Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

A detailed physical model for ion implant induced damage in silicon

International Nuclear Information System (INIS)

Tian, S.; Morris, M.F.; Morris, S.J.; Obradovic, B.; Wang, G.; Tasch, A.F.

1998-01-01

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF 2 , and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion implantation simulator, and has been developed primarily for use in engineering workstations. This damage model is the most physical model in the literature to date within the framework of the binary collision approximation (BCA), and provides the required, accurate as-implanted impurity profiles and damage profiles for transient enhanced diffusion (TED) simulation

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Impurities in silicon and their impact on solar cell performance

NARCIS (Netherlands)

Coletti, Gianluca

2011-01-01

Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

Electrodialysis separation of rhenium from silicon

International Nuclear Information System (INIS)

Prasolova, O.D.; Borisova, L.V.; Ermakov, A.N.

1989-01-01

A method of separation of ruthenium from silicon by electrodialysis with heterogenuos ion-exchange membranes is developed. The effeciency of purification of rhenium from silicon depending on the number of dialyzer chambers, temperature and pH value of the dialyzate is studed. It is found that an addditional fourth chamber between the middle and anolytic ones causes the purification coefficient increase 50 times. It is necessary to cool the dialyzate in order to reduce silicon migration into the anolyte and reverse diffusion of perrhenate-ion from the anolyte into the dialyzate. The optimal pH value of diaizate is 5.5-6. The method developed has been used for separating rhenium from industrial solution of lead production with complex composition

Genome-scale transcriptional activation by an engineered CRISPR-Cas9 complex.

Science.gov (United States)

Konermann, Silvana; Brigham, Mark D; Trevino, Alexandro E; Joung, Julia; Abudayyeh, Omar O; Barcena, Clea; Hsu, Patrick D; Habib, Naomi; Gootenberg, Jonathan S; Nishimasu, Hiroshi; Nureki, Osamu; Zhang, Feng

2015-01-29

Systematic interrogation of gene function requires the ability to perturb gene expression in a robust and generalizable manner. Here we describe structure-guided engineering of a CRISPR-Cas9 complex to mediate efficient transcriptional activation at endogenous genomic loci. We used these engineered Cas9 activation complexes to investigate single-guide RNA (sgRNA) targeting rules for effective transcriptional activation, to demonstrate multiplexed activation of ten genes simultaneously, and to upregulate long intergenic non-coding RNA (lincRNA) transcripts. We also synthesized a library consisting of 70,290 guides targeting all human RefSeq coding isoforms to screen for genes that, upon activation, confer resistance to a BRAF inhibitor. The top hits included genes previously shown to be able to confer resistance, and novel candidates were validated using individual sgRNA and complementary DNA overexpression. A gene expression signature based on the top screening hits correlated with markers of BRAF inhibitor resistance in cell lines and patient-derived samples. These results collectively demonstrate the potential of Cas9-based activators as a powerful genetic perturbation technology.

Directed combinatorial mutagenesis of Escherichia coli for complex phenotype engineering

Energy Technology Data Exchange (ETDEWEB)

Liu, Rongming; Liang, Liya; Garst, Andrew D.; Choudhury, Alaksh; Nogué, Violeta Sànchez i.; Beckham, Gregg T.; Gill, Ryan T.

2018-05-01

Strain engineering for industrial production requires a targeted improvement of multiple complex traits, which range from pathway flux to tolerance to mixed sugar utilization. Here, we report the use of an iterative CRISPR EnAbled Trackable genome Engineering (iCREATE) method to engineer rapid glucose and xylose co-consumption and tolerance to hydrolysate inhibitors in E. coli. Deep mutagenesis libraries were rationally designed, constructed, and screened to target ~40,000 mutations across 30 genes. These libraries included global and high-level regulators that regulate global gene expression, transcription factors that play important roles in genome-level transcription, enzymes that function in the sugar transport system, NAD(P)H metabolism, and the aldehyde reduction system. Specific mutants that conferred increased growth in mixed sugars and hydrolysate tolerance conditions were isolated, confirmed, and evaluated for changes in genome-wide expression levels. We tested the strain with positive combinatorial mutations for 3-hydroxypropionic acid (3HP) production under high furfural and high acetate hydrolysate fermentation, which demonstrated a 7- and 8-fold increase in 3HP productivity relative to the parent strain, respectively.

Large Eddy Simulations of Complex Flows in IC-Engine's Exhaust Manifold and Turbine

OpenAIRE

Fjällman, Johan

2014-01-01

The thesis deals with the flow in pipe bends and radial turbines geometries that are commonly found in an Internal Combustion Engine (ICE). The development phase of internal combustion engines relies more and more on simulations as an important complement to experiments. This is partly because of the reduction in development cost and the shortening of the development time. This is one of the reasons for the need of more accurate and predictive simulations. By using more complex computational ...

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

Science.gov (United States)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

The Search Engine for Multi-Proteoform Complexes: An Online Tool for the Identification and Stoichiometry Determination of Protein Complexes.

Science.gov (United States)

Skinner, Owen S; Schachner, Luis F; Kelleher, Neil L

2016-12-08

Recent advances in top-down mass spectrometry using native electrospray now enable the analysis of intact protein complexes with relatively small sample amounts in an untargeted mode. Here, we describe how to characterize both homo- and heteropolymeric complexes with high molecular specificity using input data produced by tandem mass spectrometry of whole protein assemblies. The tool described is a "search engine for multi-proteoform complexes," (SEMPC) and is available for free online. The output is a list of candidate multi-proteoform complexes and scoring metrics, which are used to define a distinct set of one or more unique protein subunits, their overall stoichiometry in the intact complex, and their pre- and post-translational modifications. Thus, we present an approach for the identification and characterization of intact protein complexes from native mass spectrometry data. © 2016 by John Wiley & Sons, Inc. Copyright © 2016 John Wiley & Sons, Inc.

Impact of pedagogical approaches on cognitive complexity and motivation to learn: Comparing nursing and engineering undergraduate students.

Science.gov (United States)

McComb, Sara A; Kirkpatrick, Jane M

2016-01-01

The changing higher education landscape is prompting nurses to rethink educational strategies. Looking beyond traditional professional boundaries may be beneficial. We compare nursing to engineering because engineering has similar accreditation outcome goals and different pedagogical approaches. We compare students' cognitive complexity and motivation to learn to identify opportunities to share pedagogical approaches between nursing and engineering. Cross-sectional data were collected from 1,167 freshmen through super senior students. Comparisons were made across years and between majors. Overall nursing and engineering students advance in cognitive complexity while maintaining motivation for learning. Sophomores reported the lowest scores on many dimensions indicating that their experiences need review. The strong influence of the National Council Licensure Examination on nursing students may drive their classroom preferences. Increased intrinsic motivation, coupled with decreased extrinsic motivation, suggests that we are graduating burgeoning life-long learners equipped to maintain currency. The disciplines' strategies for incorporating real-world learning opportunities differ, yet the students similarly advance in cognitive complexity and maintain motivation to learn. Lessons can be exchanged across professional boundaries. Copyright © 2016 Elsevier Inc. All rights reserved.

Development of educational complex on electrical engineering, electronics and microcon-trollers on modeling in TINA software

Directory of Open Access Journals (Sweden)

Vladimir A. Alekhin

2017-01-01

Full Text Available The study of electrical engineering, electronics and microcontrollers in accordance with federal state educational standards requires from students the practical mastering of experimental methods for the study of electrical circuits and electronic circuits, the formation of competences and skills in the calculation of electrical circuits and electronic circuits. The modern development of information educational technologies, the widespread use of a variety of computer facilities by students in reducing teaching hours for the study of disciplines make it necessary to create new multimedia training complexes, using computer simulation of electrical circuits, electronic circuits and microcontrollers in the lecture process and in the laboratory and practical exercises. The purpose of the research was a comparative analysis of various computer simulation programs in terms of their accessibility, ease of development and efficiency of use by lecturers and students in the educational process, and the creation and testing of a training complex for the electrical engineering, electronics and microcontrollers using the selected modeling environment.The problems associated with the need to purchase licensed software were discussed and a comparative analysis of the following computer modeling programs for electrical circuits and electronic circuits was performed: NI Multisim, Micro-Cap, Proteus VSM, OrCAD, TINA. The research method included the study of these modeling and design programs, writing of teaching aids and conducting of training sessions with students. The cost of licenses for the software application in computer classes and on students’ home computers was estimated. As a result, the conclusion was confirmed about the advisability of using the free student program of computer modeling TINA-TI and the TINACloud environment from DesignSoft for the teaching of electrical engineering and electronics.The new software product TINACloud uses cloud

Engine testing of ceramic cam-roller followers

Energy Technology Data Exchange (ETDEWEB)

Kalish, Y. (Detroit Diesel Corp., MI (United States))

1992-04-01

For several years, DDC has been developing monolithic ceramic heat engine components. One of the components, developed for an application in our state-of-the-art on-highway, heavy-duty diesel engine, the Series 60, is a silicon nitride cam-roller follower. Prior to starting this program, each valve train component in the Series 60 was considered for conversion to a ceramic material. Many advantages and disadvantages (benefits and risks) were considered. From this effort, one component was selected, the cam-roller follower. Using a system design approach, a ceramic cam-roller follower offered functional improvement at a reasonable cost. The purpose of the project was to inspect and test 100 domestically produced silicon nitride cam-roller followers built to the requirements of the DDC series 60 engine.

Theoretical Prediction of an Antimony-Silicon Monolayer (penta-Sb2Si): Band Gap Engineering by Strain Effect

Science.gov (United States)

Morshedi, Hosein; Naseri, Mosayeb; Hantehzadeh, Mohammad Reza; Elahi, Seyed Mohammad

2018-04-01

In this paper, using a first principles calculation, a two-dimensional structure of silicon-antimony named penta-Sb2Si is predicted. The structural, kinetic, and thermal stabilities of the predicted monolayer are confirmed by the cohesive energy calculation, phonon dispersion analysis, and first principles molecular dynamic simulation, respectively. The electronic properties investigation shows that the pentagonal Sb2Si monolayer is a semiconductor with an indirect band gap of about 1.53 eV (2.1 eV) from GGA-PBE (PBE0 hybrid functional) calculations which can be effectively engineered by employing external biaxial compressive and tensile strain. Furthermore, the optical characteristics calculation indicates that the predicted monolayer has considerable optical absorption and reflectivity in the ultraviolet region. The results suggest that a Sb2Si monolayer has very good potential applications in new nano-optoelectronic devices.

Physiological and Proteomic Analysis in Chloroplasts of Solanum lycopersicum L. under Silicon Efficiency and Salinity Stress

Directory of Open Access Journals (Sweden)

Sowbiya Muneer

2014-11-01

Full Text Available Tomato plants often grow in saline environments in Mediterranean countries where salt accumulation in the soil is a major abiotic stress that limits its productivity. However, silicon (Si supplementation has been reported to improve tolerance against several forms of abiotic stress. The primary aim of our study was to investigate, using comparative physiological and proteomic approaches, salinity stress in chloroplasts of tomato under silicon supplementation. Tomato seedlings (Solanum lycopersicum L. were grown in nutrient media in the presence or absence of NaCl and supplemented with silicon for 5 days. Salinity stress caused oxidative damage, followed by a decrease in silicon concentrations in the leaves of the tomato plants. However, supplementation with silicon had an overall protective effect against this stress. The major physiological parameters measured in our studies including total chlorophyll and carotenoid content were largely decreased under salinity stress, but were recovered in the presence of silicon. Insufficient levels of net-photosynthesis, transpiration and stomatal conductance were also largely improved by silicon supplementation. Proteomics analysis of chloroplasts analyzed by 2D-BN-PAGE (second-dimensional blue native polyacrylamide-gel electrophoresis revealed a high sensitivity of multiprotein complex proteins (MCPs such as photosystems I (PSI and II (PSII to the presence of saline. A significant reduction in cytochrome b6/f and the ATP-synthase complex was also alleviated by silicon during salinity stress, while the complex forms of light harvesting complex trimers and monomers (LHCs were rapidly up-regulated. Our results suggest that silicon plays an important role in moderating damage to chloroplasts and their metabolism in saline environments. We therefore hypothesize that tomato plants have a greater capacity for tolerating saline stress through the improvement of photosynthetic metabolism and chloroplast proteome

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Science.gov (United States)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Complexity Analysis of Industrial Organizations Based on a Perspective of Systems Engineering Analysts

Directory of Open Access Journals (Sweden)

I. H. Garbie

2011-12-01

Full Text Available Complexity in industrial organizations became more difficult and complex to be solved and it needs more attention from academicians and technicians. For these reasons, complexity in industrial organizations represents a new challenge in the next decades. Until now, analysis of industrial organizations complexity is still remaining a research topic of immense international interest and they require reduction in their complexity. In this paper, analysis of complexity in industrial organizations is shown based on the perspective of systems engineering analyst. In this perspective, analysis of complexity was divided into different levels and these levels were defined as complexity levels. A framework of analyzing these levels was proposed and suggested based on the complexity in industrial organizations. This analysis was divided into four main issues: industrial system vision, industrial system structure, industrial system operating, and industrial system evaluating. This analysis shows that the complexity of industrial organizations is still an ill-structured and a multi-dimensional problem.

Socio-Technical Perspective on Interdisciplinary Interactions During the Development of Complex Engineered Systems

Science.gov (United States)

McGowan, Anna-Maria R.; Daly, Shanna; Baker, Wayne; Papalambros, panos; Seifert, Colleen

2013-01-01

This study investigates interdisciplinary interactions that take place during the research, development, and early conceptual design phases in the design of large-scale complex engineered systems (LaCES) such as aerospace vehicles. These interactions, that take place throughout a large engineering development organization, become the initial conditions of the systems engineering process that ultimately leads to the development of a viable system. This paper summarizes some of the challenges and opportunities regarding social and organizational issues that emerged from a qualitative study using ethnographic and survey data. The analysis reveals several socio-technical couplings between the engineered system and the organization that creates it. Survey respondents noted the importance of interdisciplinary interactions and their benefits to the engineered system as well as substantial challenges in interdisciplinary interactions. Noted benefits included enhanced knowledge and problem mitigation and noted obstacles centered on organizational and human dynamics. Findings suggest that addressing the social challenges may be a critical need in enabling interdisciplinary interactions

In vivo time-gated fluorescence imaging with biodegradable luminescent porous silicon nanoparticles.

Science.gov (United States)

Gu, Luo; Hall, David J; Qin, Zhengtao; Anglin, Emily; Joo, Jinmyoung; Mooney, David J; Howell, Stephen B; Sailor, Michael J

2013-01-01

Fluorescence imaging is one of the most versatile and widely used visualization methods in biomedical research. However, tissue autofluorescence is a major obstacle confounding interpretation of in vivo fluorescence images. The unusually long emission lifetime (5-13 μs) of photoluminescent porous silicon nanoparticles can allow the time-gated imaging of tissues in vivo, completely eliminating shorter-lived (50-fold in vitro and by >20-fold in vivo when imaging porous silicon nanoparticles. Time-gated imaging of porous silicon nanoparticles accumulated in a human ovarian cancer xenograft following intravenous injection is demonstrated in a live mouse. The potential for multiplexing of images in the time domain by using separate porous silicon nanoparticles engineered with different excited state lifetimes is discussed.

Uptake and toxicity of arsenic, copper, and silicon in Azolla caroliniana and Lemna minor.

Science.gov (United States)

Rofkar, Jordan R; Dwyer, Daryl F; Bobak, Deanna M

2014-01-01

Here we report on the analysis of two aquatic plant species, Azolla caroliniana and Lemna minor, with respect to tolerance and uptake of co-occurring arsenic, copper, and silicon for use in engineered wetlands. Plants were cultured in nutrient solution that was amended with arsenic (0 or 20 microM), copper (2 or 78 microM), and silicon (0 or 1.8 mM) either singly or in combination. We hypothesized that arsenic and copper would negatively affect the uptake of metals, growth, and pigmentation and that silicon would mitigate those stresses. Tolerance was assessed by measuring growth of biomass and concentrations of chlorophyll and anthocyanins. Both plant species accumulated arsenic, copper, and silicon; L. minor generally had higher levels on a per biomass basis. Arsenic negatively impacted A. caroliniana, causing a 30% decrease in biomass production and an increase in the concentration of anthocyanin. Copper negatively impacted L. minor, causing a 60% decrease in biomass production and a 45% decrease in chlorophyll content. Silicon augmented the impact of arsenic on biomass production in A. caroliniana but mitigated the effect of copper on L. minor. Our results suggest that mixtures of plant species may be needed to maximize uptake of multiple contaminants in engineered wetlands.

Effect of the defect-phosphorus atom complex interaction on the formation of the properties of neutron-doped silicon

International Nuclear Information System (INIS)

Kolesnik, L.I.; Lejferov, B.M.

1984-01-01

Radiation-induced defect annealing and changes in the concentration of substituting phosphorus atoms in silicon irradiated with different neutron doses have been studied by the low-temperature photoluminescence (PL) method at 4 K. Based on the PL spectrum character dependence on the fast-to-thermal neutron ration in a flux, series of lines and bands associated with the preferential formation of radiation-induced defects (within the 1.100 eV energy range) and with the presence of phosphorus impurity (1.15-1.12 eV) are identified. Some peculiarities are studied of the stage-by-stage annealing (250-500, 430-600, 600-800 deg C) of recombination-active centers (RAC) determining the radiation in the mentioned spectrum region. The relation between the RAC variations within the 1.12-1.15 eV range and the substituting phosphorus atom concentration in the 400-500 deg C temperature range is found. Activation energy of the substituting phosphorus atom concentration variation is estimated (approximately 0.5 eV). It is shown that the formation of defect-phosphorus complexes plays an important role in the formation of neutron-doped silicon properties, the presence of fast neutron in a flux being most importants

Inorganic Glue Enabling High Performance of Silicon Particles as Lithium Ion Battery Anode

KAUST Repository

Cui, Li-Feng

2011-01-01

Silicon, as an alloy-type anode material, has recently attracted lots of attention because of its highest known Li+ storage capacity (4200 mAh/g). But lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Silicon nanostructures such as nanowires and nanotubes can overcome the pulverization problem, however these nano-engineered silicon anodes usually involve very expensive processes and have difficulty being applied in commercial lithium ion batteries. In this study, we report a novel method using amorphous silicon as inorganic glue replacing conventional polymer binder. This inorganic glue method can solve the loss of contact issue in conventional silicon particle anode and enables successful cycling of various sizes of silicon particles, both nano-particles and micron particles. With a limited capacity of 800 mAh/g, relatively large silicon micron-particles can be stably cycled over 200 cycles. The very cheap production of these silicon particle anodes makes our method promising and competitive in lithium ion battery industry. © 2011 The Electrochemical Society.

Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003

International Nuclear Information System (INIS)

Ashok, S.

2004-01-01

This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS)

Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2016-10-30

Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

Investigations of surface characterization of silicone rubber due to ...

Indian Academy of Sciences (India)

Unknown

†Department of Polymer Technology, Crescent Engineering College, Chennai 600 048, India. Abstract. In the present work, tracking ... Silicone rubber; surface degradation; tracking; WAXD; TG–DTA. 1. Introduction. Power transmission at ... mena in polymer insulators under d.c. voltages. Hence the tracking phenomena ...

Modular fabrication and characterization of complex silicon carbide composite structures Advanced Reactor Technologies (ART) Research Final Report (Feb 2015 – May 2017)

Energy Technology Data Exchange (ETDEWEB)

Khalifa, Hesham [General Atomics, San Diego, CA (United States)

2017-08-03

Advanced ceramic materials exhibit properties that enable safety and fuel cycle efficiency improvements in advanced nuclear reactors. In order to fully exploit these desirable properties, new processing techniques are required to produce the complex geometries inherent to nuclear fuel assemblies and support structures. Through this project, the state of complex SiC-SiC composite fabrication for nuclear components has advanced significantly. New methods to produce complex SiC-SiC composite structures have been demonstrated in the form factors needed for in-core structural components in advanced high temperature nuclear reactors. Advanced characterization techniques have been employed to demonstrate that these complex SiC-SiC composite structures provide the strength, toughness and hermeticity required for service in harsh reactor conditions. The complex structures produced in this project represent a significant step forward in leveraging the excellent high temperature strength, resistance to neutron induced damage, and low neutron cross section of silicon carbide in nuclear applications.

Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

CERN Document Server

Tarnavskij, G A; Obrekht, M S

2001-01-01

One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

Electroluminescence efficiencies of erbium in silicon-based hosts

Energy Technology Data Exchange (ETDEWEB)

Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2013-11-04

We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

Generation of reactive oxygen species from porous silicon microparticles in cell culture medium.

Science.gov (United States)

Low, Suet Peng; Williams, Keryn A; Canham, Leigh T; Voelcker, Nicolas H

2010-06-01

Nanostructured (porous) silicon is a promising biodegradable biomaterial, which is being intensively researched as a tissue engineering scaffold and drug-delivery vehicle. Here, we tested the biocompatibility of non-treated and thermally-oxidized porous silicon particles using an indirect cell viability assay. Initial direct cell culture on porous silicon determined that human lens epithelial cells only poorly adhered to non-treated porous silicon. Using an indirect cell culture assay, we found that non-treated microparticles caused complete cell death, indicating that these particles generated a toxic product in cell culture medium. In contrast, thermally-oxidized microparticles did not reduce cell viability significantly. We found evidence for the generation of reactive oxygen species (ROS) by means of the fluorescent probe 2',7'-dichlorofluorescin. Our results suggest that non-treated porous silicon microparticles produced ROS, which interacted with the components of the cell culture medium, leading to the formation of cytotoxic species. Oxidation of porous silicon microparticles not only mitigated, but also abolished the toxic effects.

Complex engineering objects construction using Multi-D innovative technology

International Nuclear Information System (INIS)

Agafonov, Alexey

2013-01-01

Multi-D technology is an integrated innovative project management system for a construction of complex engineering objects based on a construction process simulation using an intellectual 3D model. Multi-D technology includes: • The unified schedule of E+P+C; • The schedule of loading of human resources, machines & mechanisms; • The budget of expenses and the income integrated with the schedule; • 3D model; • Multi-D model; • Weekly-daily tasks (with 4th level schedules); • Control system of interaction of Customer-EPC(m) company - Contractors; • Change and configuration management system

Profiling N-Type Dopants in Silicon

Czech Academy of Sciences Publication Activity Database

Hovorka, Miloš; Mika, Filip; Mikulík, P.; Frank, Luděk

2010-01-01

Roč. 51, č. 2 (2010), s. 237-242 ISSN 1345-9678 R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803 Institutional research plan: CEZ:AV0Z20650511 Keywords : silicon * dopant contrast * photoemission electron microscopy * scanning electron microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.779, year: 2010 http://www.jim.or.jp/journal/e/51/02/237.html

Overview of radiation damage in silicon detectors - models and defect engineering

International Nuclear Information System (INIS)

Watts, S.J.

1997-01-01

This paper reviews recent work in the area of radiation damage in silicon detectors. It is not intended as a comprehensive review, but provides a snapshot guide to current ideas and indicates how the subject is expected to develop in the immediate future. (orig.)

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

Science.gov (United States)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

OpenAIRE

Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

2014-01-01

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

Science.gov (United States)

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures.

Science.gov (United States)

Beke, David; Károlyházy, Gyula; Czigány, Zsolt; Bortel, Gábor; Kamarás, Katalin; Gali, Adam

2017-09-06

Production of semiconductor nanostructures with high yield and tight control of shape and size distribution is an immediate quest in diverse areas of science and technology. Electroless wet chemical etching or stain etching can produce semiconductor nanoparticles with high yield but is limited to a few materials because of the lack of understanding the physical-chemical processes behind. Here we report a no-photon exciton generation chemistry (NPEGEC) process, playing a key role in stain etching of semiconductors. We demonstrate NPEGEC on silicon carbide polymorphs as model materials. Specifically, size control of cubic silicon carbide nanoparticles of diameter below ten nanometers was achieved by engineering hexagonal inclusions in microcrystalline cubic silicon carbide. Our finding provides a recipe to engineer patterned semiconductor nanostructures for a broad class of materials.

Plasma deposition of amorphous silicon-based materials

CERN Document Server

Bruno, Giovanni; Madan, Arun

1995-01-01

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

Managing project complexity : A study into adapting early project phases to improve project performance in large engineering projects

NARCIS (Netherlands)

Bosch-Rekveldt, M.G.C.

2011-01-01

Engineering projects become increasingly more complex and project complexity is assumed to be one of the causes for projects being delivered late and over budget. However, what this project complexity actually comprised of was unclear. To improve the overall project performance, this study focuses

A Dynamic Intelligent Decision Approach to Dependency Modeling of Project Tasks in Complex Engineering System Optimization

Directory of Open Access Journals (Sweden)

Tinggui Chen

2013-01-01

Full Text Available Complex engineering system optimization usually involves multiple projects or tasks. On the one hand, dependency modeling among projects or tasks highlights structures in systems and their environments which can help to understand the implications of connectivity on different aspects of system performance and also assist in designing, optimizing, and maintaining complex systems. On the other hand, multiple projects or tasks are either happening at the same time or scheduled into a sequence in order to use common resources. In this paper, we propose a dynamic intelligent decision approach to dependency modeling of project tasks in complex engineering system optimization. The approach takes this decision process as a two-stage decision-making problem. In the first stage, a task clustering approach based on modularization is proposed so as to find out a suitable decomposition scheme for a large-scale project. In the second stage, according to the decomposition result, a discrete artificial bee colony (ABC algorithm inspired by the intelligent foraging behavior of honeybees is developed for the resource constrained multiproject scheduling problem. Finally, a certain case from an engineering design of a chemical processing system is utilized to help to understand the proposed approach.

Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

1995-08-01

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

Roles of Inspecting Engineers during the Early Building Stages of the Necaxa Hydroelectric Complex

Directory of Open Access Journals (Sweden)

Elio Agustín Martínez Miranda

2006-07-01

Full Text Available Published literature on the history of electricity in Mexico spans a wide range of subjects and provides information on economic, social, political, technical and even environmental issues. This paper explores a scarcely studied vein, regarding science and education. It refers particularly to the Mexican engineers who, acting as Inspecting Engineers, participated in one of the largest hydroelectric systems of Mexico and Latin America, the Necaxa Hydroelectric Complex, and tries to answer questions such  as: what was their role?; where and what did they study?; were there any electrical engineers?; did they take any course in electricity or hydraulics?; did they apply this knowledge?; did they form part of a scientific community?; did they teach?

Waste Photovoltaic Panels for Ultrapure Silicon and Hydrogen through the Low-Temperature Magnesium Silicide.

Czech Academy of Sciences Publication Activity Database

Dytrych, Pavel; Bumba, Jakub; Kaštánek, František; Fajgar, Radek; Koštejn, Martin; Šolcová, Olga

Roč. 56, č. 45 ( 2017 ), s. 12863-12869 ISSN 0888-5885 R&D Projects: GA ČR GA15-14228S Institutional support: RVO:67985858 Keywords : magnesium silicide * waste photovoltaic panels * ultrapure silicon Subject RIV: CI - Industrial Chemistry, Chemical Engineering OBOR OECD: Chemical process engineering Impact factor: 2.843, year: 2016

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Envisioning engineering education and practice in the coming intelligence convergence era — a complex adaptive systems approach

Science.gov (United States)

Noor, Ahmed K.

2013-12-01

Some of the recent attempts for improving and transforming engineering education are reviewed. The attempts aim at providing the entry level engineers with the skills needed to address the challenges of future large-scale complex systems and projects. Some of the frontier sectors and future challenges for engineers are outlined. The major characteristics of the coming intelligence convergence era (the post-information age) are identified. These include the prevalence of smart devices and environments, the widespread applications of anticipatory computing and predictive / prescriptive analytics, as well as a symbiotic relationship between humans and machines. Devices and machines will be able to learn from, and with, humans in a natural collaborative way. The recent game changers in learnscapes (learning paradigms, technologies, platforms, spaces, and environments) that can significantly impact engineering education in the coming era are identified. Among these are open educational resources, knowledge-rich classrooms, immersive interactive 3D learning, augmented reality, reverse instruction / flipped classroom, gamification, robots in the classroom, and adaptive personalized learning. Significant transformative changes in, and mass customization of, learning are envisioned to emerge from the synergistic combination of the game changers and other technologies. The realization of the aforementioned vision requires the development of a new multidisciplinary framework of emergent engineering for relating innovation, complexity and cybernetics, within the future learning environments. The framework can be used to treat engineering education as a complex adaptive system, with dynamically interacting and communicating components (instructors, individual, small, and large groups of learners). The emergent behavior resulting from the interactions can produce progressively better, and continuously improving, learning environment. As a first step towards the realization of

Engine testing of ceramic cam-roller followers. Final report

Energy Technology Data Exchange (ETDEWEB)

Kalish, Y. [Detroit Diesel Corp., MI (United States)

1992-04-01

For several years, DDC has been developing monolithic ceramic heat engine components. One of the components, developed for an application in our state-of-the-art on-highway, heavy-duty diesel engine, the Series 60, is a silicon nitride cam-roller follower. Prior to starting this program, each valve train component in the Series 60 was considered for conversion to a ceramic material. Many advantages and disadvantages (benefits and risks) were considered. From this effort, one component was selected, the cam-roller follower. Using a system design approach, a ceramic cam-roller follower offered functional improvement at a reasonable cost. The purpose of the project was to inspect and test 100 domestically produced silicon nitride cam-roller followers built to the requirements of the DDC series 60 engine.

Metastable and bistable defects in silicon

International Nuclear Information System (INIS)

Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

2000-01-01

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

Complex dynamics of our economic life on different scales: insights from search engine query data.

Science.gov (United States)

Preis, Tobias; Reith, Daniel; Stanley, H Eugene

2010-12-28

Search engine query data deliver insight into the behaviour of individuals who are the smallest possible scale of our economic life. Individuals are submitting several hundred million search engine queries around the world each day. We study weekly search volume data for various search terms from 2004 to 2010 that are offered by the search engine Google for scientific use, providing information about our economic life on an aggregated collective level. We ask the question whether there is a link between search volume data and financial market fluctuations on a weekly time scale. Both collective 'swarm intelligence' of Internet users and the group of financial market participants can be regarded as a complex system of many interacting subunits that react quickly to external changes. We find clear evidence that weekly transaction volumes of S&P 500 companies are correlated with weekly search volume of corresponding company names. Furthermore, we apply a recently introduced method for quantifying complex correlations in time series with which we find a clear tendency that search volume time series and transaction volume time series show recurring patterns.

Porous silicon confers bioactivity to polycaprolactone composites in vitro.

Science.gov (United States)

Henstock, J R; Ruktanonchai, U R; Canham, L T; Anderson, S I

2014-04-01

Silicon is an essential element for healthy bone development and supplementation with its bioavailable form (silicic acid) leads to enhancement of osteogenesis both in vivo and in vitro. Porous silicon (pSi) is a novel material with emerging applications in opto-electronics and drug delivery which dissolves to yield silicic acid as the sole degradation product, allowing the specific importance of soluble silicates for biomaterials to be investigated in isolation without the elution of other ionic species. Using polycaprolactone as a bioresorbable carrier for porous silicon microparticles, we found that composites containing pSi yielded more than twice the amount of bioavailable silicic acid than composites containing the same mass of 45S5 Bioglass. When incubated in a simulated body fluid, the addition of pSi to polycaprolactone significantly increased the deposition of calcium phosphate. Interestingly, the apatites formed had a Ca:P ratio directly proportional to the silicic acid concentration, indicating that silicon-substituted hydroxyapatites were being spontaneously formed as a first order reaction. Primary human osteoblasts cultured on the surface of the composite exhibited peak alkaline phosphatase activity at day 14, with a proportional relationship between pSi content and both osteoblast proliferation and collagen production over 4 weeks. Culturing the composite with J744A.1 murine macrophages demonstrated that porous silicon does not elicit an immune response and may even inhibit it. Porous silicon may therefore be an important next generation biomaterial with unique properties for applications in orthopaedic tissue engineering.

neutron transmutation doping of silicon a thesis submitted to nuclear engineering department for the degree of master of science in nuclear engineering

International Nuclear Information System (INIS)

Abdel Gawwad, M.M.

2003-01-01

When silicon is irradiated by thermal neutrons the objective is to produce a number of phosphorus atoms in the target sample, in order to obtain a given resistivity after treatment. The resistivity of the sample is decreased by the transmutation of the silicon (by neutrons) to phosphorus. After the sample irradiation and decay, the radiochemical cleaning is used to clean the sample. the next step is the sample heat treatment to remove the damage caused by fast neutrons( E> 0.1 MeV). after that, the sample is cut int wafer and polished. The characterization must be carried. out to characterize the specifications of the final product. the present work aims to: find an optimization of the silicon doping processes:sample preparation, for irradiation by cleaning the sample before irradiation to avoid impurity activation. process, by calculating the fluence required to reach the required resistivity. Decay of irradiated sample, it takes four days at least to be handled. handling, it must be carefully to avoid the mechanical damage since the silicon is hard material. etching , to remove the defected layer from the sample . heat treatment , to release the damage caused during irradiation. characterization, to measure the final resistivity and the minority carrier life . hence, calculating the irradiation constant for ETRR-2

Silicon photonics: some remaining challenges

Science.gov (United States)

Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

2016-03-01

This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

Research pressure instrumentation for NASA Space Shuttle main engine, modification no. 6

Science.gov (United States)

Anderson, P. J.; Johnson, R. L.

1984-01-01

Research concerning the utilization of silicon piezoresistive strain sensing technology for space shuttle main engine applications is reported. The following specific topics were addressed: (1) transducer design and materials, (2) silicon piezoresistor characterization at cryogenic temperatures, (3) chip mounting characterization, and (4) frequency response optimization.

Development of processes for the production of solar grade silicon from halides and alkali metals

Science.gov (United States)

Dickson, C. R.; Gould, R. K.

1980-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon in volume at low cost were studied. Experiments were performed to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, determine the effects of reactants and/or products on materials of reactor construction, and make preliminary engineering and economic analyses of a scaled-up process.

Synthesis and surface engineering of nanomaterials by atmospheric-pressure microplasmas

Science.gov (United States)

McKenna, J.; Patel, J.; Mitra, S.; Soin, N.; Švrček, V.; Maguire, P.; Mariotti, D.

2011-11-01

Two different atmospheric pressure microplasma systems are discussed and used for the synthesis and surface engineering of a range of nanomaterials. Specifically a gas-phase approach from vaporized tetramethylsilane has been used to synthesize silicon carbide nanoparticles with diameters below 10 nm. A different microplasma system that interfaces with a liquid solution has then been used for the synthesis of surfactant-free electrically stabilized gold nanoparticles with varying size. A similar microplasma-liquid system has been finally successfully used to tailor surface properties of silicon nanoparticles and to reduce graphene oxide into graphene. The synthesis and surface engineering mechanisms are also discussed.

Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

CERN Document Server

Usami, N

2011-01-01

Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

Preventing light-induced degradation in multicrystalline silicon

Science.gov (United States)

Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

2014-04-01

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

International Nuclear Information System (INIS)

Abadli, S.; Mansour, F.

2011-01-01

This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

The neutron silicon lens. An update of the thermal neutron lens results

International Nuclear Information System (INIS)

Johnson, M.W.; Daymond, M.R.

2001-01-01

This paper introduces the concept of the Neutron Silicon Lens (NSL) and provides and update on the experimental results achieved to date. The NSL design is a cylindrical neutron lens based on the use of multiple neutron mirrors supported and separated by silicon wafers. Such lenses would have many applications in both the primary and scattered beams on neutron instruments, and would lead to immediate improvements where the sample to be illuminated is small, as in high pressure or engineering strain scanning instruments. (author)

The neutron silicon lens. An update of the thermal neutron lens results

Energy Technology Data Exchange (ETDEWEB)

Johnson, M.W.; Daymond, M.R. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire (United Kingdom)

2001-03-01

This paper introduces the concept of the Neutron Silicon Lens (NSL) and provides and update on the experimental results achieved to date. The NSL design is a cylindrical neutron lens based on the use of multiple neutron mirrors supported and separated by silicon wafers. Such lenses would have many applications in both the primary and scattered beams on neutron instruments, and would lead to immediate improvements where the sample to be illuminated is small, as in high pressure or engineering strain scanning instruments. (author)

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

Science.gov (United States)

Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

2015-06-01

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

Science.gov (United States)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Silver diffusion through silicon carbide in microencapsulated nuclear fuels TRISO

International Nuclear Information System (INIS)

Cancino T, F.; Lopez H, E.

2013-10-01

The silver diffusion through silicon carbide is a challenge that has persisted in the development of microencapsulated fuels TRISO (Tri structural Isotropic) for more than four decades. The silver is known as a strong emitter of gamma radiation, for what is able to diffuse through the ceramic coatings of pyrolytic coal and silicon carbide and to be deposited in the heat exchangers. In this work we carry out a recount about the art state in the topic of the diffusion of Ag through silicon carbide in microencapsulated fuels and we propose the role that the complexities in the grain limit can have this problem. (Author)

Noble gas atoms as chemical impurities in silicon

International Nuclear Information System (INIS)

Tkachev, V.D.; Mudryi, A.V.; Minaev, N.S.

1984-01-01

The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Moessbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms. (author)

Coated silicon comprising material for protection against environmental corrosion

Science.gov (United States)

Hazel, Brian Thomas (Inventor)

2009-01-01

In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

Back-contacted back-junction silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Mangersnes, Krister

2010-10-15

Conventional silicon solar cells have a front-side contacted emitter. Back-contacted back-junction (BC-BJ) silicon solar cells, on the other hand, have both the complete metallization and the active diffused regions of both polarities on the backside. World-record efficiencies have already been demonstrated for this type of cell design in production, both on cell and module level. However, the production of these cells is both complex and costly, and a further cost reduction in fabrication is needed to make electricity from BC-BJ silicon solar cells cost-competitive with electricity on the grid ('grid-parity'). During the work with this thesis, we have investigated several important issues regarding BC-BJ silicon solar cells. The aim has been to reduce production cost and complexity while at the same time maintaining, or increasing, the already high conversion efficiencies demonstrated elsewhere. This has been pursued through experimental work as well as through numerical simulations and modeling. Six papers are appended to this thesis, two of which are still under review in scientific journals. In addition, two patents have been filed based on the work presented herein. Experimentally, we have focused on investigating and optimizing single, central processing steps. A laser has been the key processing tool during most of the work. We have used the same laser both to structure the backside of the cell and to make holes in a double-layer of passivating amorphous silicon and silicon oxide, where the holes were opened with the aim of making local contact to the underlying silicon. The processes developed have the possibility of using a relatively cheap and industrially proven laser and obtain results better than most state-of-the-art laser technologies. During the work with the laser, we also developed a thermodynamic model that was able to predict the outcome from laser interaction with amorphous and crystalline silicon. Alongside the experimental work, we

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

1992-02-01

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Energy Technology Data Exchange (ETDEWEB)

Daghbouj, N. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France); Faculté des Sciences de Monastir, Université de Monastir, Monastir (Tunisia); Cherkashin, N., E-mail: nikolay.cherkashin@cemes.fr; Darras, F.-X.; Paillard, V.; Claverie, A. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France); Fnaiech, M. [Faculté des Sciences de Monastir, Université de Monastir, Monastir (Tunisia)

2016-04-07

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.

Vascular tissue engineering by computer-aided laser micromachining.

Science.gov (United States)

Doraiswamy, Anand; Narayan, Roger J

2010-04-28

Many conventional technologies for fabricating tissue engineering scaffolds are not suitable for fabricating scaffolds with patient-specific attributes. For example, many conventional technologies for fabricating tissue engineering scaffolds do not provide control over overall scaffold geometry or over cell position within the scaffold. In this study, the use of computer-aided laser micromachining to create scaffolds for vascular tissue networks was investigated. Computer-aided laser micromachining was used to construct patterned surfaces in agarose or in silicon, which were used for differential adherence and growth of cells into vascular tissue networks. Concentric three-ring structures were fabricated on agarose hydrogel substrates, in which the inner ring contained human aortic endothelial cells, the middle ring contained HA587 human elastin and the outer ring contained human aortic vascular smooth muscle cells. Basement membrane matrix containing vascular endothelial growth factor and heparin was to promote proliferation of human aortic endothelial cells within the vascular tissue networks. Computer-aided laser micromachining provides a unique approach to fabricate small-diameter blood vessels for bypass surgery as well as other artificial tissues with complex geometries.

Potentiometric surfaces of the Arnold Engineering Development Complex Area, Arnold Air Force Base, Tennessee, May and September 2011

Science.gov (United States)

Haugh, Connor J.; Robinson, John A.

2016-01-29

Arnold Air Force Base occupies about 40,000 acres in Coffee and Franklin Counties, Tennessee. The primary mission of Arnold Air Force Base is to provide risk-reduction information in the development of aerospace products through test and evaluation. This mission is achieved in part through test facilities at Arnold Engineering Development Complex (AEDC), which occupies about 4,000 acres in the center of Arnold Air Force Base. Arnold Air Force Base is underlain by gravel and limestone aquifers, the most productive of which is the Manchester aquifer. Several volatile organic compounds, primarily chlorinated solvents, have been identified in the groundwater at Arnold Air Force Base. In 2011, the U.S. Geological Survey, in cooperation with the U.S. Air Force, Arnold Air Force Base, completed a study of groundwater flow focused on the Arnold Engineering Development Complex area. The Arnold Engineering Development Complex area is of particular concern because within this area (1) chlorinated solvents have been identified in the groundwater, (2) the aquifers are dewatered around below-grade test facilities, and (3) there is a regional groundwater divide.

EDITORIAL: Excelling under strain: band engineering in nanomaterials Excelling under strain: band engineering in nanomaterials

Science.gov (United States)

Demming, Anna

2013-08-01

interest in strain studies as well. Researchers in China investigated the effects of tensile strain on the thermal conductivity of graphene nanoribbons. Tuning the thermal conductivity of nanomaterials is highly desirable to optimize their functionality [5]. Wei and colleagues use computer simulations based on reverse nonequilibrium molecular dynamics (RNEMD) to demonstrate what they describe as 'a strain-induced magic flexibility of thermal engineering for carbon-based nanostructures', which may provide a new approach for tailoring nanomaterial functionality. Despite the attractions of more recently discovered carbon nanomaterials silicon remains the bedrock of the semiconductor device industry. Germanium nanostructures also hold significant interest, such as Ge nanowires, which have high mobility and a conveniently low synthesis temperature [6]. In fact the potential applications of germanium nanowires in field effect transistors and nanobridge devices prompted Jagadish and colleagues in Australia, Korea and the UK to investigate the growth of taper-free kinked Ge nanowires in silicon [7]. As they point out many recent reports have highlighted such kinked nanowires as valuable components for novel nanodevices. The work reported by Hrauda and colleagues in this issue looks at the growth of germanium islands on a silicon substrate rather than nanowires [2]. They grow islands on pre-patterned silicon with different levels of Ge deposition with the aim of better understanding how to manage the effects of strain due to lattice mismatch between the two metals. Their results show that considerably more Ge can be deposited without dislocations forming than previously thought and reveal a distinctive cycle of changing island morphologies as Ge is deposited. They add, 'Strain relaxation is revealed to be the main driving force of a rather complex evolution of island shape and Ge distribution'. In reference to his theory of atoms Bohr is once said to have told Werner Heisenberg

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Synthesis and luminescent properties of a novel green-emitting Tb (Ⅲ) complex based on amino-modified fluorine silicone oil and isophorone diisocyanate

Science.gov (United States)

Hao, Haixia; Chu, Yang; Yu, Zhenjiang; Xie, Hongde; Seo, Hyo Jin

2017-10-01

The novel luminescent polymer-rare earth complexes, denoted as (PFSi-IPDI)-Tb(Ⅲ)-Phen, have been successfully synthesized and can be made into flexible films. Amino-modified fluorine silicone oil-isophorone diisocyanate (PFSi-IPDI) was used as the host macromolecular ligand, and 1, 10-Phenanthroline (Phen) as the secondary small-molecular co-ligand. The luminescent lanthanide complexes were characterized by fourier transform infrared (FITR), scanning electron microscope (SEM), thermogravimetric analysis (TGA). The luminescent properties were investigated through photoluminescence excitation (PLE) and emission (PL) spectroscopy. FTIR analysis verifies the successful preparation and integration of PFSi-IPDI to Tb3+. The comparatively uniform morphological structure can be observed in the images of SEM. The polymer-rare earth complexes display the typical luminescence emission peaks under the excitation wavelength of 330 nm. From the decay curve, the short lifetime (about 0.89 ms) is observed for (PFSi-IPDI)-Tb(Ⅲ)-Phen (0.6 mol/L). Moreover, these luminescent polymer-rare earth complexes possess superior thermal stability (T5 > 195 °C). All the interesting results suggest the potential application of the luminescent polymer-rare earth complexes in green-emitting luminescent materials under high temperature.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

System Coordination of Survivability and Safety of Complex Engineering Objects Operation

Directory of Open Access Journals (Sweden)

Nataliya Pankratova

2014-11-01

Full Text Available A system strategy to estimation the guaranteed survivability and safety of complex engineering objects (CEO operation is proposed. The principles that underlie the strategy of the guaranteed safety of CEO operation provide a flexible approach to timely detection, recognition, forecast, and system diagnostics of risk factors and situations, to formulation and implementation of a rational decision in a practicable time within an unremovable time constraint. Implementation of the proposed strategy is shown on example of diagnostics of electromobile-refrigerator functioning in real mode.

REFEL silicon carbide. The development of a ceramic for a nuclear engineering application

Energy Technology Data Exchange (ETDEWEB)

Kennedy, P.; Shennan, J. V.

1974-10-15

REFEL silicon carbide is a strong, uniform, fine-grain material which retains its strength and is stable in an oxidizing environment up to 1400 deg C. REFEL silicon carbide tube can be produced in quantity and by a combination of process controls, visual examination, NDT and proof testing, a very consistent product can be made. The material was developed as a nuclear fuel cladding capable of operating at temperatures o 1100 deg C in a CO₂-cooled reactor and the combination of excellent physical, mechanical and chemical properties together with product consistency ave confirmed the feasibility of this application. In a series of irradiation experiments, REFEL silicon carbide clad fuel pins have behaved predictably. At irradiation temperatures below about 800 deg C, the thermal conductivity falls sharply, the associate thermal stress increases, and the probability of failure, for the same rating, increases. It has been demonstrated theoretically that this effect can be overcome by halving the tube wall thickness. In addition to the thermal stress enhancement, the strength and Weibull modulus also fall under irradiation and consequently the safe working stress is reduced, Calculations show that in the absence of irradiation a fourfold increase in rating cold be tolerated. Thus, the material should have excellent thermal stress resistance in non-nuclear applications such as gas turbine components. (auth)

Cognitive engineering models: A prerequisite to the design of human-computer interaction in complex dynamic systems

Science.gov (United States)

Mitchell, Christine M.

1993-01-01

This chapter examines a class of human-computer interaction applications, specifically the design of human-computer interaction for the operators of complex systems. Such systems include space systems (e.g., manned systems such as the Shuttle or space station, and unmanned systems such as NASA scientific satellites), aviation systems (e.g., the flight deck of 'glass cockpit' airplanes or air traffic control) and industrial systems (e.g., power plants, telephone networks, and sophisticated, e.g., 'lights out,' manufacturing facilities). The main body of human-computer interaction (HCI) research complements but does not directly address the primary issues involved in human-computer interaction design for operators of complex systems. Interfaces to complex systems are somewhat special. The 'user' in such systems - i.e., the human operator responsible for safe and effective system operation - is highly skilled, someone who in human-machine systems engineering is sometimes characterized as 'well trained, well motivated'. The 'job' or task context is paramount and, thus, human-computer interaction is subordinate to human job interaction. The design of human interaction with complex systems, i.e., the design of human job interaction, is sometimes called cognitive engineering.

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

International Nuclear Information System (INIS)

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

2008-01-01

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

A Case Study : Application of the Systems Engineering Modeling in the early phases of a Complex Space System Project

NARCIS (Netherlands)

Bone, M.; Cloutier, R.L.; Gill, E.K.A.; Verma, D.

2009-01-01

There is increased recognition of the role of systems engineering in reducing the risk (technical, cost, and schedule) on complex space systems development and integration projects. A number of international systems engineering standards have been published in the last five years (ISO 15288, IEEE

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Stem cell engineered bone with calcium-phosphate coated porous titanium scaffold or silicon hydroxyapatite granules for revision total joint arthroplasty.

Science.gov (United States)

García-Gareta, Elena; Hua, Jia; Rayan, Faizal; Blunn, Gordon W

2014-06-01

Aseptic loosening in total joint replacements (TJRs) is mainly caused by osteolysis which leads to a reduction of the bone stock necessary for implant fixation in revision TJRs. Our aim was to develop bone tissue-engineered constructs based on scaffolds of clinical relevance in revision TJRs to reconstitute the bone stock at revision operations by using a perfusion bioreactor system (PBRS). The hypothesis was that a PBRS will enhance mesenchymal stem cells (MSCs) proliferation and osteogenic differentiation and will provide an even distribution of MSCs throughout the scaffolds when compared to static cultures. A PBRS was designed and implemented. Scaffolds, silicon substituted hydroxyapatite granules and calcium-phosphate coated porous TiAl6V4 cylinders, were seeded with MSCs and cultured either in static conditions or in the PBRS at 0.75 mL/min. Statistically significant increased cell proliferation and alkaline phosphatase activity was found in samples cultured in the PBRS. Histology revealed a more even cell distribution in the perfused constructs. SEM showed that cells arranged in sheets. Long cytoplasmic processes attached the cells to the scaffolds. We conclude that a novel tissue engineering approach to address the issue of poor bone stock at revision operations is feasible by using a PBRS.

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Polyelectrolyte-complex nanostructured fibrous scaffolds for tissue engineering

International Nuclear Information System (INIS)

Verma, Devendra; Katti, Kalpana S.; Katti, Dinesh R.

2009-01-01

In the current work, polyelectrolyte complex (PEC) fibrous scaffolds for tissue engineering have been synthesized and a mechanism of their formation has been investigated. The scaffolds are synthesized using polygalacturonic acid and chitosan using the freeze drying methodology. Highly interconnected pores of sizes in the range of 5-20 μm are observed in the scaffolds. The thickness of the fibers was found to be in the range of 1-2 μm. Individual fibers have a nanogranular structure as observed using AFM imaging. In these scaffolds, PEC nanoparticles assemble together at the interface of ice crystals during freeze drying process. Further investigation shows that the freezing temperature and concentration have a remarkable effect on structure of scaffolds. Biocompatibility studies show that scaffold containing chitosan, polygalacturonic acid and hydroxyapatite promotes cell adhesion and proliferation. On the other hand, cells on scaffolds fabricated without hydroxyapatite nanoparticles showed poor adhesion.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Fabrication of 3D Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

2012-06-06

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Silicon liquid for cooling coal cutter loader motors

Energy Technology Data Exchange (ETDEWEB)

Donets, I K; Sukhanov, V V; Tsingarelli, E P; Dmitrenko, Yu I; Kovalev, E B

1983-05-01

Several silicones were tested with a view to their suitability for use as a cutter loader engine coolant. None were particularly toxic and FM-5.6AP had the best engineering properties; a full toxicological evaluation was therefore made of it. Threshold concentrations of FM-5.6AP were 450 and 24.1 mg/m/sup 3/ for the acute and chronic tests respectively. Increased temperature (120 C) did not affect the toxicity of the vapors significantly. No influence on the phagocytosis, deposition and elimination of coal dust in the lungs was found. Tests carried out underground in a Donbass mine revealed no harmful effects on miners. Laboratory and mine tests using an EhKVZh-315 cutter loader engine revealed that the quantity of FM-5.6AP vapor present in the air flow is less than the detectable minimum (0.01 mg/ml). It may therefore safely be used as a dielectric liquid in cutter loader engines.

Advanced tendencies in development of photovoltaic cells for power engineering

Science.gov (United States)

Strebkov, D. S.

2015-01-01

Development of solar power engineering must be based on original innovative Russian and world technologies. It is necessary to develop promising Russian technologies of manufacturing of photovoltaic cells and semiconductor materials: chlorine-free technology for obtaining solar silicon; matrix solar cell technology with an efficiency of 25-30% upon the conversion of concentrated solar, thermal, and laser radiation; encapsulation technology for high-voltage silicon solar modules with a voltage up to 1000 V and a service life up to 50 years; new methods of concentration of solar radiation with the balancing illumination of photovoltaic cells at 50-100-fold concentration; and solar power systems with round-the-clock production of electrical energy that do not require energy storage devices and reserve sources of energy. The advanced tendency in silicon power engineering is the use of high-temperature reactions in heterogeneous modular silicate solutions for long-term (over one year) production of heat and electricity in the autonomous mode.

Sensemaking in a Value Based Context for Large Scale Complex Engineered Systems

Science.gov (United States)

Sikkandar Basha, Nazareen

The design and the development of Large-Scale Complex Engineered Systems (LSCES) requires the involvement of multiple teams and numerous levels of the organization and interactions with large numbers of people and interdisciplinary departments. Traditionally, requirements-driven Systems Engineering (SE) is used in the design and development of these LSCES. The requirements are used to capture the preferences of the stakeholder for the LSCES. Due to the complexity of the system, multiple levels of interactions are required to elicit the requirements of the system within the organization. Since LSCES involves people and interactions between the teams and interdisciplinary departments, it should be socio-technical in nature. The elicitation of the requirements of most large-scale system projects are subjected to creep in time and cost due to the uncertainty and ambiguity of requirements during the design and development. In an organization structure, the cost and time overrun can occur at any level and iterate back and forth thus increasing the cost and time. To avoid such creep past researches have shown that rigorous approaches such as value based designing can be used to control it. But before the rigorous approaches can be used, the decision maker should have a proper understanding of requirements creep and the state of the system when the creep occurs. Sensemaking is used to understand the state of system when the creep occurs and provide a guidance to decision maker. This research proposes the use of the Cynefin framework, sensemaking framework which can be used in the design and development of LSCES. It can aide in understanding the system and decision making to minimize the value gap due to requirements creep by eliminating ambiguity which occurs during design and development. A sample hierarchical organization is used to demonstrate the state of the system at the occurrence of requirements creep in terms of cost and time using the Cynefin framework. These

Damage progression in silicon nitride undergoing non-conforming hybrid cyclic contact

Czech Academy of Sciences Publication Activity Database

Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

2017-01-01

Roč. 105, DEC (2017), s. 97-110 ISSN 0142-1123 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Cyclic contact fatigue * Surface and subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics OBOR OECD: Audio engineering, reliability analysis Impact factor: 2.899, year: 2016

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

2016-01-01

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.

2016-11-30

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Silicon photonics design from devices to systems

CERN Document Server

Chrostowski, Lukas

2015-01-01

From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers in...

Fiscal 1997 project on the R and D of industrial scientific technology under consignment from NEDO. Report on the results of the R and D of silicon-based polymeric materials (development of liquid methane fueled aircraft engine); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo / Shin energy Sangyo gijutsu Sogo Kaihatsu Kiko itaku. Keisokei kobunshi zairyo no kenkyu kaihatsu (methane nenryo kokukiyo engine kaihatsu) seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This R and D aims at establishing the basic technology on the molecular design, synthesis, use as materials, and evaluation of silicon-based polymers, of which excellent electronic/optical functions, high heat-resistance/combustion-resistance/dynamic characteristic are expected. The paper introduced the results of the fiscal 1997 R and D of them. The themes are as follows: technology of synthesis of silicon-based polymeric materials with sea-island microstructures, interstitial type structure forming technology, composite materials with organometallic complexes and silicon-based polymers, silicon-based polymer structural materials with ring structures, optimization of the Wurtz`s synthesis method of silicon-based polymers, unsaturated and hypercoordinate organosilicic compounds, function of silicon-based polymers, synthesis and polymerization of new silicon-based monomers, development of a new synthesis method of polysilane and the function, development of new application of silicon-based polymers in imaging devices for recording/memory/display of information, molecular design of {pi}-conjugate and {sigma}-conjugate compounds including silicon, and conformation and electronic state of silicon-based polymeric materials. 186 refs., 141 figs., 68 tabs.

Electroless deposition of Ni-P on a silicon surface

Directory of Open Access Journals (Sweden)

hassan El Grini

2017-06-01

Full Text Available The present article concerns the metallization of silicon substrates by deposition of the nickel-phosphorus alloy produced by an autocatalytic chemical process. The deposition electrolyte is composed of a metal salt, a reducing agent (sodium hypophosphite, a complexing agent (sodium citrate and a buffer (ammonium acetate. The deposition could only be carried out after activation of the silicon by fixing catalytic species on its surface. The immersion of the silicon samples in palladium chloride made it possible to produce relatively thick and regular Ni-P coatings. The immersion time was optimized. The activation of Si was characterized by XPS and the Ni-P coating by XPS and M.E.B. The electrochemical study did not show any real mechanism changes compared to the Ni-P deposition on a conductive surface. 

First-principles investigation of strain effects on the energy gaps in silicon nanoclusters

International Nuclear Information System (INIS)

Peng, X-H; Alizadeh, A; Bhate, N; Varanasi, K K; Kumar, S K; Nayak, S K

2007-01-01

First-principles density functional calculations were performed to study strain effects on the energy gaps in silicon nanoclusters with diameter ranging from 0.6 to 2 nm. Hydrostatic and non-hydrostatic strains have been found to affect the energy gaps differently. For the same strain energy density, non-hydrostatic strain leads to a significantly larger change in the energy gap of silicon clusters compared to that of the hydrostatic strain case. In contrast, hydrostatic and non-hydrostatic strain effects on the energy gaps of bulk Si or larger size Si quantum dots are comparable. Non-hydrostatic strains break the tetrahedral bonding symmetry in silicon, resulting in significant variation in the energy gaps due to the splitting of the degenerate orbitals in the clusters. Our results suggest that the combination of energy gaps and strains permits the engineering of photoluminescence in silicon nanoclusters and offers the possibility of designing novel optical devices and chemical sensors

Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

Energy Technology Data Exchange (ETDEWEB)

Holowczak, J.

2002-03-01

With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

Hybrid integration of carbon nanotubes in silicon photonic structures

Science.gov (United States)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Pairs of chalcogen impurities in silicon

International Nuclear Information System (INIS)

Paula Junior, H.F. de.

1988-01-01

The electronic structure of complex defects in silicon involving oxygen and sulfur (O-O, S-O and S-S), occupying different positions in the host crystal is studied. It is shown that the many-electron effects (via configuration interaction) are important to describe the correct ground state. The orbital base set is obtained through the LCAO-MO-INDO/S method. (author) [pt

Inelastic response of silicon to shock compression.

Science.gov (United States)

Higginbotham, A; Stubley, P G; Comley, A J; Eggert, J H; Foster, J M; Kalantar, D H; McGonegle, D; Patel, S; Peacock, L J; Rothman, S D; Smith, R F; Suggit, M J; Wark, J S

2016-04-13

The elastic and inelastic response of [001] oriented silicon to laser compression has been a topic of considerable discussion for well over a decade, yet there has been little progress in understanding the basic behaviour of this apparently simple material. We present experimental x-ray diffraction data showing complex elastic strain profiles in laser compressed samples on nanosecond timescales. We also present molecular dynamics and elasticity code modelling which suggests that a pressure induced phase transition is the cause of the previously reported 'anomalous' elastic waves. Moreover, this interpretation allows for measurement of the kinetic timescales for transition. This model is also discussed in the wider context of reported deformation of silicon to rapid compression in the literature.

Molecular Cloning Designer Simulator (MCDS: All-in-one molecular cloning and genetic engineering design, simulation and management software for complex synthetic biology and metabolic engineering projects

Directory of Open Access Journals (Sweden)

Zhenyu Shi

2016-12-01

Full Text Available Molecular Cloning Designer Simulator (MCDS is a powerful new all-in-one cloning and genetic engineering design, simulation and management software platform developed for complex synthetic biology and metabolic engineering projects. In addition to standard functions, it has a number of features that are either unique, or are not found in combination in any one software package: (1 it has a novel interactive flow-chart user interface for complex multi-step processes, allowing an integrated overview of the whole project; (2 it can perform a user-defined workflow of cloning steps in a single execution of the software; (3 it can handle multiple types of genetic recombineering, a technique that is rapidly replacing classical cloning for many applications; (4 it includes experimental information to conveniently guide wet lab work; and (5 it can store results and comments to allow the tracking and management of the whole project in one platform. MCDS is freely available from https://mcds.codeplex.com. Keywords: BioCAD, Genetic engineering software, Molecular cloning software, Synthetic biology, Workflow simulation and management

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Science.gov (United States)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

Science.gov (United States)

Xu, Zejing

linked silicon nanoparticle clusters were synthesized via the CuAAC "click" reaction of functional silicon nanoparticles with α,ω-functional PEG polymers of various lengths. Dynamic light scattering studies show that the flexible globular nanoparticle arrays undergo a solvent dependent change in volume (ethanol> dichloromethane> toluene) similar in behavior to hydrogel nanocomposites. A novel light-harvesting complex and artificial photosynthetic material based on silicon nanoparticles was designed and synthesized. Silicon nanoparticles were used as nanoscaffolds for organizing the porphyrins to form light-harvesting complexes thereby enhancing the light absorption of the system. The energy transfer from silicon nanoparticles to porphyrin acceptors was investigated by both steady-state and time-resolved fluorescence spectroscopy. The energy transfer efficiency depended on the donor-acceptor ratio and the distance between the nanoparticle and the porphyrin ring. The addition of C60 resulted in the formation of silicon nanoparticle-porphyrin-fullerene nanoclusters which led to charge separation upon irradiation of the porphyrin ring. The electron-transfer process between the porphyrin and fullerene was investigated by femto-second transient absorption spectroscopy. Finally, the water soluble silicon nanoparticles were used as nanocarriers in photodynamic therapeutic application, in which can selectively deliver porphyrins into human embryonic kidney 293T (HEK293T) cells. In particular, the PEGylated alkynyl-porphyrins were conjugated onto the azido-terminated silicon nanoparticles via a CuAAC "click" reaction. The resultant PEGylated porphyrin grafted silicon nanoparticles have diameters around 13.5 +/- 3.8 nm. The cryo-TEM and conventional TEM analysis proved that the PEGylated porphyrin grafted silicon nanoparticle could form the micelle-like structures at higher concentration in water via self-assembly. The UV-Vis absorption analysis demonstrated that the silicon

The New Silicon Strip Detectors for the CMS Tracker Upgrade

CERN Document Server

Dragicevic, Marko

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces

Directory of Open Access Journals (Sweden)

Chris J. Allender

2013-03-01

Full Text Available This study evaluates the effectiveness of vapour-phase deposition for creating sub-monolayer coverage of aminopropyl triethoxysilane (APTES on silicon in order to exert control over subsequent gold nanoparticle deposition. Surface coverage was evaluated indirectly by observing the extent to which gold nanoparticles (AuNPs deposited onto the modified silicon surface. By varying the distance of the silicon wafer from the APTES source and concentration of APTES in the evaporating media, control over subsequent gold nanoparticle deposition was achievable to an extent. Fine control over AuNP deposition (AuNPs/μm2 however, was best achieved by adjusting the ionic concentration of the AuNP-depositing solution. Furthermore it was demonstrated that although APTES was fully removed from the silicon surface following four hours incubation in water, the gold nanoparticle-amino surface complex was stable under the same conditions. Atomic force microscopy (AFM and X-ray photoelectron spectroscopy (XPS were used to study these affects.

Simulations of silicon vertex tracker for star experiment at RHIC

Energy Technology Data Exchange (ETDEWEB)

Odyniec, G.; Cebra, D.; Christie, W.; Naudet, C.; Schroeder, L.; Wilson, W. [Lawrence Berkeley Lab., CA (United States); Liko, D. [Institut fur Hochenenergiephysik, Vienna, (Austria); Cramer, J.; Prindle, D.; Trainor, T. [Univ. of Washington, Seattle (United States); Braithwaite, W. [Univ. of Arkansas, Little Rock (United States)

1991-12-31

The first computer simulations to optimize the Silicon Vertex Tracker (SVT) designed for the STAR experiment at RHIC are presented. The physics goals and the expected complexity of the events at RHIC dictate the design of a tracking system for the STAR experiment. The proposed tracking system will consist of a silicon vertex tracker (SVT) to locate the primary interaction and secondary decay vertices and to improve the momentum resolution, and a time projection chamber (TPC), positioned inside a solenoidal magnet, for continuous tracking.

Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

2010-12-01

This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

International Nuclear Information System (INIS)

Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

2010-01-01

This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

Silicon analog components device design, process integration, characterization, and reliability

CERN Document Server

El-Kareh, Badih

2015-01-01

This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Developing a framework for qualitative engineering: Research in design and analysis of complex structural systems

Science.gov (United States)

Franck, Bruno M.

1990-01-01

The research is focused on automating the evaluation of complex structural systems, whether for the design of a new system or the analysis of an existing one, by developing new structural analysis techniques based on qualitative reasoning. The problem is to identify and better understand: (1) the requirements for the automation of design, and (2) the qualitative reasoning associated with the conceptual development of a complex system. The long-term objective is to develop an integrated design-risk assessment environment for the evaluation of complex structural systems. The scope of this short presentation is to describe the design and cognition components of the research. Design has received special attention in cognitive science because it is now identified as a problem solving activity that is different from other information processing tasks (1). Before an attempt can be made to automate design, a thorough understanding of the underlying design theory and methodology is needed, since the design process is, in many cases, multi-disciplinary, complex in size and motivation, and uses various reasoning processes involving different kinds of knowledge in ways which vary from one context to another. The objective is to unify all the various types of knowledge under one framework of cognition. This presentation focuses on the cognitive science framework that we are using to represent the knowledge aspects associated with the human mind's abstraction abilities and how we apply it to the engineering knowledge and engineering reasoning in design.

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Science.gov (United States)

Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

2016-03-01

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

Liquid-Phase Laser Induced Forward Transfer for Complex Organic Inks and Tissue Engineering.

Science.gov (United States)

Nguyen, Alexander K; Narayan, Roger J

2017-01-01

Laser induced forward transfer (LIFT) acts as a novel alternative to incumbent plotting techniques such as inkjet printing due to its ability to precisely deposit and position picoliter-sized droplets while being gentle enough to preserve sensitive structures within the ink. Materials as simple as screen printing ink to complex eukaryotic cells have been printed with applications spanning from microelectronics to tissue engineering. Biotechnology can benefit from this technique due to the efficient use of low volumes of reagent and the compatibility with a wide range of rheological properties. In addition, LIFT can be performed in a simple lab environment, not requiring vacuum or other extreme conditions. Although the basic apparatus is simple, many strategies exist to optimize the performance considering the ink and the desired pattern. The basic mechanism is similar between studies so the large number of variants can be summarized into a couple of categories and reported on with respect to their specific applications. In particular, precise and gentle deposition of complex molecules and eukaryotic cells represent the unique abilities of this technology. LIFT has demonstrated not only marked improvements in the quality of sensors and related medical devices over those manufactured with incumbent technologies but also great applicability in tissue engineering due to the high viability of printed cells.

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Quality assurance database for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Lymanets, Anton [Physikalisches Institut, Universitaet Tuebingen (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System is a main tracking device of the CBM Experiment at FAIR. Its construction includes production, quality assurance and assembly of large number of components, e.g., 106 carbon fiber support structures, 1300 silicon microstrip sensors, 16.6k readout chips, analog microcables, etc. Detector construction is distributed over several production and assembly sites and calls for a database that would be extensible and allow tracing the components, integrating the test data, monitoring the component statuses and data flow. A possible implementation of the above-mentioned requirements is being developed at GSI (Darmstadt) based on the FAIR DB Virtual Database Library that provides connectivity to common SQL-Database engines (PostgreSQL, Oracle, etc.). Data structure, database architecture as well as status of implementation are discussed.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

International Nuclear Information System (INIS)

Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

2000-01-01

The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

Quasi-dimensional modeling of a fast-burn combustion dual-plug spark-ignition engine with complex combustion chamber geometries

International Nuclear Information System (INIS)

Altın, İsmail; Bilgin, Atilla

2015-01-01

This study builds on a previous parametric investigation using a thermodynamic-based quasi-dimensional (QD) cycle simulation of a spark-ignition (SI) engine with dual-spark plugs. The previous work examined the effects of plug-number and location on some performance parameters considering an engine with a simple cylindrical disc-shaped combustion chamber. In order to provide QD thermodynamic models applicable to complex combustion chamber geometries, a novel approach is considered here: flame-maps, which utilizes a computer aided design (CAD) software (SolidWorks). Flame maps are produced by the CAD software, which comprise all the possible flame radiuses with an increment of one-mm between them, according to the spark plug positions, spark timing, and piston position near the top dead center. The data are tabulated and stored as matrices. Then, these tabulated data are adapted to the previously reported cycle simulation. After testing for simple disc-shaped chamber geometries, the simulation is applied to a real production automobile (Honda-Fit) engine to perform the parametric study. - Highlights: • QD model was applied in dual plug engine with complex realistic combustion chamber. • This method successfully modeled the combustion in the dual-plug Honda-Fit engine. • The same combustion chamber is tested for various spark plug(s) locations. • The centrally located single spark-plug results in the fastest combustion

Progressive design methodology for complex engineering systems based on multiobjective genetic algorithms and linguistic decision making

NARCIS (Netherlands)

Kumar, P.; Bauer, P.

2008-01-01

This work focuses on a design methodology that aids in design and development of complex engineering systems. This design methodology consists of simulation, optimization and decision making. Within this work a framework is presented in which modelling, multi-objective optimization and multi

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

An anisotropic thermal-stress model for through-silicon via

Science.gov (United States)

Liu, Song; Shan, Guangbao

2018-02-01

A two-dimensional thermal-stress model of through-silicon via (TSV) is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermal-stress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results (model can be integrated into stress-driven design flow for 3-D IC , leading to the more accurate timing analysis considering the thermal-stress effect. Project supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund (No. U1537208).

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

Energy Technology Data Exchange (ETDEWEB)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L. [Nanjing Hydraulic Research Institute, Nanjing (China); Shen, M. X. [Hehai University, Nanjing (China)

2017-06-15

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

International Nuclear Information System (INIS)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L.; Shen, M. X.

2017-01-01

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

International Nuclear Information System (INIS)

Loomis, G.G.; Miller, C.M.; Giansiracusa, J.A.; Kimmel, R.; Prewett, S.V.

2000-01-01

This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

2014-01-01

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas

2014-08-13

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

A summary of computational experience at GE Aircraft Engines for complex turbulent flows in gas turbines

Science.gov (United States)

Zerkle, Ronald D.; Prakash, Chander

1995-01-01

This viewgraph presentation summarizes some CFD experience at GE Aircraft Engines for flows in the primary gaspath of a gas turbine engine and in turbine blade cooling passages. It is concluded that application of the standard k-epsilon turbulence model with wall functions is not adequate for accurate CFD simulation of aerodynamic performance and heat transfer in the primary gas path of a gas turbine engine. New models are required in the near-wall region which include more physics than wall functions. The two-layer modeling approach appears attractive because of its computational complexity. In addition, improved CFD simulation of film cooling and turbine blade internal cooling passages will require anisotropic turbulence models. New turbulence models must be practical in order to have a significant impact on the engine design process. A coordinated turbulence modeling effort between NASA centers would be beneficial to the gas turbine industry.

Surface etching technologies for monocrystalline silicon wafer solar cells

Science.gov (United States)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Fabrication and Modification of Nanoporous Silicon Particles

Science.gov (United States)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

Using social media to facilitate knowledge transfer in complex engineering environments: a primer for educators

Science.gov (United States)

Murphy, Glen; Salomone, Sonia

2013-03-01

While highly cohesive groups are potentially advantageous they are also often correlated with the emergence of knowledge and information silos based around those same functional or occupational clusters. Consequently, an essential challenge for engineering organisations wishing to overcome informational silos is to implement mechanisms that facilitate, encourage and sustain interactions between otherwise disconnected groups. This paper acts as a primer for those seeking to gain an understanding of the design, functionality and utility of a suite of software tools generically termed social media technologies in the context of optimising the management of tacit engineering knowledge. Underpinned by knowledge management theory and using detailed case examples, this paper explores how social media technologies achieve such goals, allowing for the transfer of knowledge by tapping into the tacit and explicit knowledge of disparate groups in complex engineering environments.

A Framework of Working Across Disciplines in Early Design and R&D of Large Complex Engineered Systems

Science.gov (United States)

McGowan, Anna-Maria Rivas; Papalambros, Panos Y.; Baker, Wayne E.

2015-01-01

This paper examines four primary methods of working across disciplines during R&D and early design of large-scale complex engineered systems such as aerospace systems. A conceptualized framework, called the Combining System Elements framework, is presented to delineate several aspects of cross-discipline and system integration practice. The framework is derived from a theoretical and empirical analysis of current work practices in actual operational settings and is informed by theories from organization science and engineering. The explanatory framework may be used by teams to clarify assumptions and associated work practices, which may reduce ambiguity in understanding diverse approaches to early systems research, development and design. The framework also highlights that very different engineering results may be obtained depending on work practices, even when the goals for the engineered system are the same.

Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

Czech Academy of Sciences Publication Activity Database

Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

2001-01-01

Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

Development of improved processing and evaluation methods for high reliability structural ceramics for advanced heat engine applications Phase II. Final report

Energy Technology Data Exchange (ETDEWEB)

Pujari, V.J.; Tracey, D.M.; Foley, M.R. [and others

1996-02-01

The research program had as goals the development and demonstration of significant improvements in processing methods, process controls, and nondestructive evaluation (NDE) which can be commercially implemented to produce high reliability silicon nitride components for advanced heat engine applications at temperatures to 1370{degrees}C. In Phase I of the program a process was developed that resulted in a silicon nitride - 4 w% yttria HIP`ed material (NCX 5102) that displayed unprecedented strength and reliability. An average tensile strength of 1 GPa and a strength distribution following a 3-parameter Weibull distribution were demonstrated by testing several hundred buttonhead tensile specimens. The Phase II program focused on the development of methodology for colloidal consolidation producing green microstructure which minimizes downstream process problems such as drying, shrinkage, cracking, and part distortion during densification. Furthermore, the program focused on the extension of the process to gas pressure sinterable (GPS) compositions. Excellent results were obtained for the HIP composition processed for minimal density gradients, both with respect to room-temperature strength and high-temperature creep resistance. Complex component fabricability of this material was demonstrated by producing engine-vane prototypes. Strength data for the GPS material (NCX-5400) suggest that it ranks very high relative to other silicon nitride materials in terms of tensile/flexure strength ratio, a measure of volume quality. This high quality was derived from the closed-loop colloidal process employed in the program.

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Radiation hardness of silicon detectors - a challenge from high-energy physics

CERN Document Server

Lindström, G; Fretwurst, E

1999-01-01

An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

Development of silicon pad detectors and readout electronics for a Compton camera

CERN Document Server

Studen, A; Clinthorne, N H; Czermak, A; Dulinski, W; Fuster, J A; Han, L; Jalocha, P; Kowal, M; Kragh, T; Lacasta, C; Llosa, G; Meier, D; Mikuz, M; Nygård, E; Park, S J; Roe, S; Rogers, W L; Sowicki, B; Weilhammer, P; Wilderman, S J; Yoshioka, K; Zhang, L

2003-01-01

Applications in nuclear medicine and bio-medical engineering may profit using a Compton camera for imaging distributions of radio-isotope labelled tracers in organs and tissues. These applications require detection of photons using thick position-sensitive silicon sensors with the highest possible energy and good spatial resolution. In this paper, research and development on silicon pad sensors and associated readout electronics for a Compton camera are presented. First results with low-noise, self-triggering VATAGP ASIC's are reported. The measured energy resolution was 1.1 keV FWHM at room temperature for the sup 2 sup 4 sup 1 Am photo-peak at 59.5 keV.

Ethical education in software engineering: responsibility in the production of complex systems.

Science.gov (United States)

Génova, Gonzalo; González, M Rosario; Fraga, Anabel

2007-12-01

Among the various contemporary schools of moral thinking, consequence-based ethics, as opposed to rule-based, seems to have a good acceptance among professionals such as software engineers. But naïve consequentialism is intellectually too weak to serve as a practical guide in the profession. Besides, the complexity of software systems makes it very hard to know in advance the consequences that will derive from professional activities in the production of software. Therefore, following the spirit of well-known codes of ethics such as the ACM/IEEE's, we advocate for a more solid position in the ethical education of software engineers, which we call 'moderate deontologism', that takes into account both rules and consequences to assess the goodness of actions, and at the same time pays an adequate consideration to the absolute values of human dignity. In order to educate responsible professionals, however, this position should be complemented with a pedagogical approach to virtue ethics.

Simple, Complex, Innovative : Design Education at Civil Engineering

NARCIS (Netherlands)

Van Nederveen, G.A.; Soons, F.A.M.; Suddle, S.I.; De Ridder, H.

2011-01-01

In faculties such as Civil Engineering, design is a not a core activity. Core activities at Civil Engineering are structural engineering, structural analysis, mechanics, fluid dynamics, etc. Design education has a relatively small share in the curriculum, compared to faculties such as Industrial

Adaptive silicone-membrane lenses: planar vs. shaped membrane

CSIR Research Space (South Africa)

Schneider, F

2009-08-01

Full Text Available Engineering, Georges-Koehler-Allee 102, Freiburg 79110, Germany florian.schneider@imtek.uni-freiburg.de ABSTRACT We compare the performance and optical quality of two types of adaptive fluidic silicone-membrane lenses. The membranes feature either a...-membrane lenses: planar vs. shaped membrane Florian Schneider1,2, Philipp Waibel2 and Ulrike Wallrabe2 1 CSIR, Materials Science and Manufacturing, PO Box 395, Pretoria 0001, South Africa 2 University of Freiburg – IMTEK, Department of Microsystems...

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Applied clinical engineering

International Nuclear Information System (INIS)

Feinberg, B.

1986-01-01

This book demonstrates how clinical engineering has applied engineering principles to the development and use of complex medical devices for the diagnosis and treatment of the sick and injured. It discusses the proper utilization of medical devices and equipment in the health-care industry and provides understanding of complex engineering systems, and their uses in the modern hospital or other health-care facility

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

Safety assessment of complex engineered and natural systems: radioactive waste disposal

International Nuclear Information System (INIS)

McNeish, J.A.; Vallikat, V.; Atkins, J.; Balady, M.A.

1997-01-01

Evaluation of deep, geologic disposal of nuclear waste requires the probabilistic safety assessment of a complex system from the coupling of various processes and sub-systems, parameter and model uncertainties, spatial and temporal variabilities, and the multiplicity of designs and scenarios. Both the engineered and natural system are included in the evaluation. Each system has aspects with considerable uncertainty both in important parameters and in overall conceptual models. The study represented herein provides a probabilistic safety assessment of a potential respository system for multiple engineered barrier system (EBS) design and conceptual model configurations (CRWMS M and O, 1996a) and considers the effects of uncertainty on the overall results. The assessment is based on data and process models available at the time of the study and doesnt necessarily represent the current safety evaluation. In fact, the percolation flux through the repository system is now expected to be higher than the estimate used for this study. The potential effects of higher percolation fluxes are currently under study. The safety of the system was assessed for both 10,000 and 1,000,000 years. Use of alternative conceptual models also produced major improvement in safety. For example, use of a more realistic engineered system release model produced improvement of over an order of magnitude in safety. Alternative measurement locations for the safety assessment produced substantial increases in safety, through the results are based on uncertain dilution factors in the transporting groundwater. (Author)

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Ecology studies at the Idaho National Engineering Laboratory Radioactive Waste Management Complex

International Nuclear Information System (INIS)

Arthur, W.J.; Markham, O.D.

1978-01-01

In September 1977 a radioecological research program was initiated at the Idaho National Engineering Laboratory (INEL) Radioactive Waste Management Complex in the southcentral Idaho. The primary goals of the research are to: (1) determine floral and faunal composition in the area; (2) sample various ecosystem components for radionuclides; (3) determine impacts of small mammal burrowing and vegetation growth on movement of radioactive materials; (4) compare ambient radiation exposures to radiation doses received by animals inhabiting the area; and (5) understand the interrelationships between the organisms and their role in radionuclide transport

Synthesis of New Silicon-linked Lanthanocene Complexes and Their High Catalytic Activity for Methyl Methacrylate Polymerization with Nanometric Sodium Hydride as Co-catalyst

Institute of Scientific and Technical Information of China (English)

谢小敏; 黄吉玲

2005-01-01

The synthesis and characterization of four new silicon-linked lanthanocene complexes with pendant phenyl groups on cyclopentadiene were reported. Based on the data of elemental analyses, MS and IR, the complexes were presumed to be unsolvated and dimeric complexes [Me2Si(C5H3CMe2C6H5)2LnC1]2 [Ln=Er (1), Gd (2), Sm (3), Dy (4)]. In conjunction with AlEt3 or sodium hydride as the co-catalyst, these complexes could efficiently catalyze the polymerization of methyl methacrylate (MMA). When the nanometric sodium hydride was used as a co-catalyst, the complexes were highly effective for the polymerization of MMA. At low temperature and in short time, in [MeESi(C5H3CMe2C6H5)2LnC1]2/NaH (nanometric) system, the polymer was obtained in more than 80% yield and the molecular weight was greater than 105. The activity reached that of organolanthanide hydride as a single-component catalyst. In ]MeESi(C5H3CMe2C6H5)2ErC1]2/Nail (nanometric) system, the effects of the molar ratio of MMA/catalyst and catalyst/co-catalyst, and the temperature on polymerization were studied.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Engineering the cell surface display of cohesins for assembly of cellulosome-inspired enzyme complexes on Lactococcus lactis

Directory of Open Access Journals (Sweden)

Wieczorek Andrew S

2010-09-01

Full Text Available Abstract Background The assembly and spatial organization of enzymes in naturally occurring multi-protein complexes is of paramount importance for the efficient degradation of complex polymers and biosynthesis of valuable products. The degradation of cellulose into fermentable sugars by Clostridium thermocellum is achieved by means of a multi-protein "cellulosome" complex. Assembled via dockerin-cohesin interactions, the cellulosome is associated with the cell surface during cellulose hydrolysis, forming ternary cellulose-enzyme-microbe complexes for enhanced activity and synergy. The assembly of recombinant cell surface displayed cellulosome-inspired complexes in surrogate microbes is highly desirable. The model organism Lactococcus lactis is of particular interest as it has been metabolically engineered to produce a variety of commodity chemicals including lactic acid and bioactive compounds, and can efficiently secrete an array of recombinant proteins and enzymes of varying sizes. Results Fragments of the scaffoldin protein CipA were functionally displayed on the cell surface of Lactococcus lactis. Scaffolds were engineered to contain a single cohesin module, two cohesin modules, one cohesin and a cellulose-binding module, or only a cellulose-binding module. Cell toxicity from over-expression of the proteins was circumvented by use of the nisA inducible promoter, and incorporation of the C-terminal anchor motif of the streptococcal M6 protein resulted in the successful surface-display of the scaffolds. The facilitated detection of successfully secreted scaffolds was achieved by fusion with the export-specific reporter staphylococcal nuclease (NucA. Scaffolds retained their ability to associate in vivo with an engineered hybrid reporter enzyme, E. coli β-glucuronidase fused to the type 1 dockerin motif of the cellulosomal enzyme CelS. Surface-anchored complexes exhibited dual enzyme activities (nuclease and β-glucuronidase, and were

Towards neuromorphic electronics: Memristors on foldable silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-11-01

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

Energy Technology Data Exchange (ETDEWEB)

Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

2015-12-30

Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Tattoo-Like Strain Gauges Based on Silicon Nano-Membranes

Science.gov (United States)

Lu, Nanshu

2012-02-01

This talk reports the in vivo measurement of tissue deformation through adhesive-free, conformable lamination of a tattoo-like elastic strain gauge consisted of piezoresistive silicon nano-membranes strategically integrated with tissue-like elastomeric substrates. The mechanical deformation in soft tissues cannot yet be directly quantified due to the lack of enabling tools. While stiff strain gauges for structural health monitoring have long existed, biological tissues are soft, curvilinear and highly deformable in contrast to civil or aerospace structures. An ultra-thin, ultra-soft, tattoo-like strain gauge that can conform to the convoluted surface of human body and stay attached during locomotion will be able to directly quantify tissue deformation without affecting the mechanical behavior of the tissue. While single crystalline silicon is known to have the highest gauge factor and best elastic response, it is intrinsically stiff and brittle. To achieve strain gauges with high compliance, high stretchability and reasonable sensitivity, single crystalline silicon nano-membranes will be transfer-printed onto polymeric support through carefully engineered stamps. The thickness and length of the Si strip will be chosen according to theoretical and numerical mechanics analysis which takes into account for the tradeoff between stretchability and sensitivity.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

Energy Technology Data Exchange (ETDEWEB)

Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

2000-02-01

The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

Science.gov (United States)

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

p-type doping by platinum diffusion in low phosphorus doped silicon

Science.gov (United States)

Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

2003-07-01

In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

Hydroxyapatites enriched in silicon – Bioceramic materials for biomedical and pharmaceutical applications

Directory of Open Access Journals (Sweden)

Katarzyna Szurkowska

2017-08-01

Full Text Available Hydroxyapatite (Ca10(PO46(OH2, abbreviated as HA plays a crucial role in implantology, dentistry and bone surgery. Due to its considerable similarity to the inorganic fraction of the mineralized tissues (bones, enamel and dentin, it is used as component in many bone substitutes, coatings of metallic implants and dental materials. Biomaterial engineering often takes advantage of HA capacity for partial ion substitution because the incorporation of different ions in the HA structure leads to materials with improved biological or physicochemical properties. The objective of the work is to provide an overview of current knowledge about apatite materials substituted with silicon ions. Although the exact mechanism of action of silicon in the bone formation process has not been fully elucidated, research has shown beneficial effects of this element on bone matrix mineralization as well as on collagen type I synthesis and stabilization. The paper gives an account of the functions of silicon in bone tissue and outlines the present state of research on synthetic HA containing silicate ions (Si-HA. Finally, methods of HA production as well as potential and actual applications of HA materials modified with silicon ions are discussed.

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

A DLTS study of hydrogen doped czochralski-grown silicon

Energy Technology Data Exchange (ETDEWEB)

Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

2015-12-15

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

Strain-engineered growth of two-dimensional materials.

Science.gov (United States)

Ahn, Geun Ho; Amani, Matin; Rasool, Haider; Lien, Der-Hsien; Mastandrea, James P; Ager Iii, Joel W; Dubey, Madan; Chrzan, Daryl C; Minor, Andrew M; Javey, Ali

2017-09-20

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe 2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe 2 , respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation

Energy Technology Data Exchange (ETDEWEB)

Levitskii, V. S., E-mail: lev-vladimir@yandex.ru [St. Petersburg State Electrotechnical University “LETI” (Russian Federation); Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru; Seredin, P. V. [Voronezh State University (Russian Federation); Terukov, E. I. [St. Petersburg State Electrotechnical University “LETI” (Russian Federation)

2015-11-15

The effect of solar radiation on the surface composition of mesoporous and macroporous silicon is studied by infrared spectroscopy, Raman spectroscopy, and photoluminescence measurements in order to analyze the possibility of using these materials as a material for solar-power engineering. The studies are conducted in the laboratory environment, with the use of a solar-radiation simulator operating under conditions close to the working conditions of standard silicon solar cells. The studies show that, in general, the materials meet the requirements of solar-power engineering, if it is possible to preclude harmful effects associated with the presence of heat-sensitive and photosensitive bonds at the nanomaterial surface by standard processing methods.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Science Outside the Lab: Helping Graduate Students in Science and Engineering Understand the Complexities of Science Policy.

Science.gov (United States)

Bernstein, Michael J; Reifschneider, Kiera; Bennett, Ira; Wetmore, Jameson M

2017-06-01

Helping scientists and engineers challenge received assumptions about how science, engineering, and society relate is a critical cornerstone for macroethics education. Scientific and engineering research are frequently framed as first steps of a value-free linear model that inexorably leads to societal benefit. Social studies of science and assessments of scientific and engineering research speak to the need for a more critical approach to the noble intentions underlying these assumptions. "Science Outside the Lab" is a program designed to help early-career scientists and engineers understand the complexities of science and engineering policy. Assessment of the program entailed a pre-, post-, and 1 year follow up survey to gauge student perspectives on relationships between science and society, as well as a pre-post concept map exercise to elicit student conceptualizations of science policy. Students leave Science Outside the Lab with greater humility about the role of scientific expertise in science and engineering policy; greater skepticism toward linear notions of scientific advances benefiting society; a deeper, more nuanced understanding of the actors involved in shaping science policy; and a continued appreciation of the contributions of science and engineering to society. The study presents an efficacious program that helps scientists and engineers make inroads into macroethical debates, reframe the ways in which they think about values of science and engineering in society, and more thoughtfully engage with critical mediators of science and society relationships: policy makers and policy processes.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Polishing of silicon based advanced ceramics

Science.gov (United States)

Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

2009-05-01

Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

Science.gov (United States)

Dickson, C. R.; Gould, R. K.; Felder, W.

1981-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Allpix$^{2}$: A Modular Simulation Framework for Silicon Detectors

CERN Document Server

Spannagel, Simon; Hynds, Daniel; Alipour Tehrani, Niloufar; Benoit, Mathieu; Dannheim, Dominik; Gauvin, Neal; Nurnberg, Andreas Matthias; Schutze, Paul Jean; Vicente Barreto Pinto, Mateus

2018-01-01

Allpix$^{2}$ is a generic, open-source software framework for the simulation of silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model files describing the detector parameters. The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement separate simulation steps such as realistic charge carrier deposition with the Geant4 toolkit or propagation of charge carriers in silicon using a drift-diffusion model. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behaviour of charge carriers within the silicon, bringing a new level of realism to Monte Carlo based simulations of particle detectors. This paper provides an overview of the framework and a select...

Tuning the Color of Silicon Nanostructures

KAUST Repository

Cao, Linyou

2010-07-14

Empowering silicon (Si) with optical functions constitutes a very important challenge in photonics. The scalable fabrication capabilities for this earth-abundant, environmentally friendly material are unmatched in sophistication and can be unleashed to realize a plethora of high-performance photonic functionalities that find application in information, bio-, display, camouflage, ornamental, and energy technologies. Nanofashioning represents a general strategy to turn Si into a useful optical material and Si structures have already been engineered to enable light emission, optical cloaking, waveguiding, nonlinear optics, enhanced light absorption, and sensing. Here, we demonstrate that a wide spectrum of colors can be generated by harnessing the strong resonant light scattering properties of Si nanostructures under white light illumination. The ability to engineer such colors in a predetermined fashion through a choice of the structure size, dielectric environment, and illumination conditions opens up entirely new applications of Si and puts this material in a new light. © 2010 American Chemical Society.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Latest Progress of Fault Detection and Localization in Complex Electrical Engineering

Science.gov (United States)

Zhao, Zheng; Wang, Can; Zhang, Yagang; Sun, Yi

2014-01-01

In the researches of complex electrical engineering, efficient fault detection and localization schemes are essential to quickly detect and locate faults so that appropriate and timely corrective mitigating and maintenance actions can be taken. In this paper, under the current measurement precision of PMU, we will put forward a new type of fault detection and localization technology based on fault factor feature extraction. Lots of simulating experiments indicate that, although there are disturbances of white Gaussian stochastic noise, based on fault factor feature extraction principal, the fault detection and localization results are still accurate and reliable, which also identifies that the fault detection and localization technology has strong anti-interference ability and great redundancy.

One-step production of phage-silicon nanoparticles by PLAL as fluorescent nanoprobes for cell identification

Science.gov (United States)

De Plano, Laura M.; Scibilia, Santi; Rizzo, Maria Giovanna; Crea, Sara; Franco, Domenico; Mezzasalma, Angela M.; Guglielmino, Salvatore P. P.

2018-03-01

Silicon nanoparticles (SiNPs) are widely used as promising nanoplatform owing to their high specific surface area, optical properties and biocompatibility. Silicon nanoparticles find possible application in biomedical environment for their potential quantum effects and the functionalization with biomaterials, too. In this work, we propose a new approach for bio-functionalization of SiNPs and M13-engineered bacteriophage, displaying specific peptides that selectively recognize peripheral blood mononuclear cells (PBMC). The "one-step" functionalization is conducted during the laser ablation of silicon plate in buffer solution with engineered bacteriophages, to obtain SiNPs binding bacteriophages (phage-SiNPs). The interaction between SiNPs and bacteriophage is investigated. Particularly, the optical and morphological characterizations of phage-SiNPs are performed by UV-Vis spectroscopy, scanning electron microscopy operating in transmission mode (STEM) and X-ray spectroscopy (EDX). The functionality of phage-SiNPs is investigated through the photoemissive properties in recognition test on PBMC. Our results showed that phage-SiNPs maintain the capability and the activity to bind PBMC within 30 min. The fluorescence of phage-SiNPs allowed to obtain an optical signal on cell type targets. Finally, the proposed strategy demonstrated its potential use in in vitro applications and could be exploited to realize an optical biosensor to detect a specific target.

Interactive effects of plant-available soil silicon and herbivory on competition between two grass species

Science.gov (United States)

Garbuzov, Mihail; Reidinger, Stefan; Hartley, Susan E.

2011-01-01

Background and Aims The herbivore defence system of true grasses (Poaceae) is predominantly based on silicon that is taken up from the soil and deposited in the leaves in the form of abrasive phytoliths. Silicon uptake mechanisms can be both passive and active, with the latter suggesting that there is an energetic cost to silicon uptake. This study assessed the effects of plant-available soil silicon and herbivory on the competitive interactions between the grasses Poa annua, a species that has previously been reported to accumulate only small amounts of silicon, and Lolium perenne, a high silicon accumulator. Methods Plants were grown in mono- and mixed cultures under greenhouse conditions. Plant-available soil silicon levels were manipulated by adding silicon to the soil in the form of sodium silicate. Subsets of mixed culture pots were exposed to above-ground herbivory by desert locusts (Schistocerca gregaria). Key Results In the absence of herbivory, silicon addition increased biomass of P. annua but decreased biomass of L. perenne. Silicon addition increased foliar silicon concentrations of both grass species >4-fold. Under low soil-silicon availability the herbivores removed more leaf biomass from L. perenne than from P. annua, whereas under high silicon availability the reverse was true. Consequently, herbivory shifted the competitive balance between the two grass species, with the outcome depending on the availability of soil silicon. Conclusions It is concluded that a complex interplay between herbivore abundance, growth–defence trade-offs and the availability of soil silicon in the grasses' local environment affects the outcome of inter-specific competition, and so has the potential to impact on plant community structure. PMID:21868406

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

International Nuclear Information System (INIS)

Lindstroem, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

2001-01-01

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstroem et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail

Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

International Nuclear Information System (INIS)

Elgersma, O.; Borstrok, J.J.M.

1989-01-01

Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

Managing and engineering in complex situations

CERN Document Server

Sousa-Poza, Andres

2013-01-01

With so many terms available to define the same thing, it would seem nearly irresponsible to introduce yet another term (complex situation) to describe a phenomenological state of such as a system. However, a complex situation infers both a broader meaning and imposes a different perspective. Complex in this context is dependent on understanding and reality rather than observer and knowledge.   Situation imposes a gestalt that cannot be characterized within a singular perspective that relegates paradox to a superior/subordinate hierarchy. This also infers that complex situation has no monotonic definition or each definition is by default incomplete. Therefore the perennial derivations for systems such as complex systems, system of systems, federation of systems is no longer a sufficient descriptor for complex situation.  Ergo system and its genealogy lack the constitution to define complex situations. The books' intent is to explore this pathology through a series of papers written by authors that work in ...

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Re-Engineering Complex Legacy Systems at NASA

Science.gov (United States)

Ruszkowski, James; Meshkat, Leila

2010-01-01

The Flight Production Process (FPP) Re-engineering project has established a Model-Based Systems Engineering (MBSE) methodology and the technological infrastructure for the design and development of a reference, product-line architecture as well as an integrated workflow model for the Mission Operations System (MOS) for human space exploration missions at NASA Johnson Space Center. The design and architectural artifacts have been developed based on the expertise and knowledge of numerous Subject Matter Experts (SMEs). The technological infrastructure developed by the FPP Re-engineering project has enabled the structured collection and integration of this knowledge and further provides simulation and analysis capabilities for optimization purposes. A key strength of this strategy has been the judicious combination of COTS products with custom coding. The lean management approach that has led to the success of this project is based on having a strong vision for the whole lifecycle of the project and its progress over time, a goal-based design and development approach, a small team of highly specialized people in areas that are critical to the project, and an interactive approach for infusing new technologies into existing processes. This project, which has had a relatively small amount of funding, is on the cutting edge with respect to the utilization of model-based design and systems engineering. An overarching challenge that was overcome by this project was to convince upper management of the needs and merits of giving up more conventional design methodologies (such as paper-based documents and unwieldy and unstructured flow diagrams and schedules) in favor of advanced model-based systems engineering approaches.

Molecular Cloning Designer Simulator (MCDS): All-in-one molecular cloning and genetic engineering design, simulation and management software for complex synthetic biology and metabolic engineering projects.

Science.gov (United States)

Shi, Zhenyu; Vickers, Claudia E

2016-12-01

Molecular Cloning Designer Simulator (MCDS) is a powerful new all-in-one cloning and genetic engineering design, simulation and management software platform developed for complex synthetic biology and metabolic engineering projects. In addition to standard functions, it has a number of features that are either unique, or are not found in combination in any one software package: (1) it has a novel interactive flow-chart user interface for complex multi-step processes, allowing an integrated overview of the whole project; (2) it can perform a user-defined workflow of cloning steps in a single execution of the software; (3) it can handle multiple types of genetic recombineering, a technique that is rapidly replacing classical cloning for many applications; (4) it includes experimental information to conveniently guide wet lab work; and (5) it can store results and comments to allow the tracking and management of the whole project in one platform. MCDS is freely available from https://mcds.codeplex.com.

An innovative large scale integration of silicon nanowire-based field effect transistors

Science.gov (United States)

Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

2018-05-01

Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

Engineering for the ATLAS SemiConductor Tracker (SCT) End-cap

Energy Technology Data Exchange (ETDEWEB)

Abdesselam, A; Barr, A [Department of Physics, Oxford University, Oxford (United Kingdom); Allport, P P [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool (United Kingdom); Anderson, B [Department of Physics, University College, University of London, London (United Kingdom); Andricek, L; Becker, H [Max-Planck-Institut fuer Physik, Muenchen (Germany); Anghinolfi, F [European Laboratory for Particle Physics (CERN), Geneva (Switzerland); Apsimon, R J; Austin, A; Barclay, P; Batchelor, L E; Benes, J [Centro Nacional de Microelectronica de Barcelona, CNM-IMB, CSIC, Barcelona (Spain); Atkinson, T [University of Melbourne, Parkville, Victoria 3052 (Australia); Band, H [NIKHEF, Amsterdam (Netherlands); Bates, R L; Bell, W H [Department of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Batley, J R [Cavendish Laboratory, Cambridge University, Cambridge (United Kingdom); Beck, G; Belymam, A [Department of Physics, Queen Mary and Westfield College, University of London, London (United Kingdom); Bell, P [School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom)], E-mail: S.J.Haywood@rl.ac.uk (and others)

2008-05-15

The ATLAS SemiConductor Tracker (SCT) is a silicon-strip tracking detector which forms part of the ATLAS inner detector. The SCT is designed to track charged particles produced in proton-proton collisions at the Large Hadron Collider (LHC) at CERN at an energy of 14 TeV. The tracker is made up of a central barrel and two identical end-caps. The barrel contains 2112 silicon modules, while each end-cap contains 988 modules. The overall tracking performance depends not only on the intrinsic measurement precision of the modules but also on the characteristics of the whole assembly, in particular, the stability and the total material budget. This paper describes the engineering design and construction of the SCT end-caps, which are required to support mechanically the silicon modules, supply services to them and provide a suitable environment within the inner detector. Critical engineering choices are highlighted and innovative solutions are presented - these will be of interest to other builders of large-scale tracking detectors. The SCT end-caps will be fully connected at the start of 2008. Further commissioning will continue, to be ready for proton-proton collision data in 2008.

Engineering a large application software project: the controls of the CERN PS accelerator complex

International Nuclear Information System (INIS)

Benincasa, G.P.; Daneels, A.; Heymans, P.; Serre, Ch.

1985-01-01

The CERN PS accelerator complex has been progressively converted to full computer controls without interrupting its full-time operation (more than 6000 hours per year with on average not more than 1% of the total down-time due to controls). The application software amounts to 120 man-years and 450'000 instructions: it compares with other large software projects, also outside the accelerator world: e.g. Skylab's ground support software. This paper outlines the application software structure which takes into account technical requirements and constraints (resulting from the complexity of the process and its operation) and economical and managerial ones. It presents the engineering and management techniques used to promote implementation, testing and commissioning within budget, manpower and time constraints and concludes with experience gained

Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

International Nuclear Information System (INIS)

Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

2006-01-01

We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

Energy Technology Data Exchange (ETDEWEB)

Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

2016-06-15

The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

Silicon pixel R&D for CLIC

CERN Document Server

AUTHOR|(SzGeCERN)718101

2017-01-01

The physics aims at the proposed future CLIC high-energy linear e+e− collider pose challenging demands on the performance of the vertex and tracking detector system. In particular the detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The requirements include ultra-low mass, facilitated by power pulsing and air cooling in the vertex-detector region, small cell sizes and precision hit timing at the few-ns level. A highly granular all- silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Direct modification of silicon surface by nanosecond laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

2013-10-01

Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

Carbon elimination from silicon kerf: Thermogravimetric analysis and mechanistic considerations.

Science.gov (United States)

Vazquez-Pufleau, Miguel; Chadha, Tandeep S; Yablonsky, Gregory; Biswas, Pratim

2017-01-18

40% of ultrapure silicon is lost as kerf during slicing to produce wafers. Kerf is currently not being recycled due to engineering challenges and costs associated with removing its abundant impurities. Carbon left behind from the lubricant remains as one of the most difficult contaminants to remove in kerf without significant silicon oxidation. The present work enables to better understand the mechanism of carbon elimination in kerf which can aid the design of better processes for kef recycling and low cost photovoltaics. In this paper, we studied the kinetics of carbon elimination from silicon kerf in two atmospheres: air and N 2, under a regime of no-diffusion-limitation. We report the apparent activation energy in both atmospheres using three methods: Kissinger, and two isoconversional approaches. In both atmospheres, a bimodal apparent activation energy is observed, suggesting a two stage process. A reaction mechanism is proposed in which (a) C-C and C-O bond cleavage reactions occur in parallel with polymer formation; (b) at higher temperatures, this polymer fully degrades in air but leaves a tarry residue in N 2 that accounts for about 12% of the initial total carbon.

Study of Dielectric Properties and Morphology of Epoxy Resin with Silicon Dioxide Microparticles and Nanoparticles

Czech Academy of Sciences Publication Activity Database

Hudec, Jiří; Neděla, Vilém

2016-01-01

Roč. 22, S3 (2016), s. 1896-1897 ISSN 1431-9276 R&D Projects: GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : epoxy resin ESEM * Nanoparticles * silicon dioxide * ESEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.891, year: 2016

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Silicon nanowires enhanced proliferation and neuronal differentiation of neural stem cell with vertically surface microenvironment.

Science.gov (United States)

Yan, Qiuting; Fang, Lipao; Wei, Jiyu; Xiao, Guipeng; Lv, Meihong; Ma, Quanhong; Liu, Chunfeng; Wang, Wang

2017-09-01

Owing to its biocompatibility, noncytotoxicity, biodegradability and three-dimensional structure, vertically silicon nanowires (SiNWs) arrays are a promising scaffold material for tissue engineering, regenerative medicine and relevant medical applications. Recently, its osteogenic differentiation effects, reorganization of cytoskeleton and regulation of the fate on stem cells have been demonstrated. However, it still remains unknown whether SiNWs arrays could affect the proliferation and neuronal differentiation of neural stem cells (NSCs) or not. In the present study, we have employed vertically aligned SiNWs arrays as culture systems for NSCs and proved that the scaffold material could promote the proliferation and neuronal differentiation of NSCs while maintaining excellent cell viability and stemness. Immunofluorescence imaging analysis, Western blot and RT-PCR results reveal that NSCs proliferation and neuronal differentiation efficiency on SiNWs arrays are significant greater than that on silicon wafers. These results implicate SiNWs arrays could offer a powerful platform for NSCs research and NSCs-based therapy in the field of neural tissue engineering.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Wiping frictional properties of electrospun hydrophobic/hydrophilic polyurethane nanofiber-webs on soda-lime glass and silicon-wafer.

Science.gov (United States)

Watanabe, Kei; Wei, Kai; Nakashima, Ryu; Kim, Ick Soo; Enomoto, Yuji

2013-04-01

In the present work, we conducted the frictional tests of hydrophobic and hydrophilic polyurethane (PUo and PUi) nanofiber webs against engineering materials; soda-lime glass and silicon wafer. PUi/glass combination, with highest hydrophilicity, showed the highest friction coefficient which decrease with the increase of the applied load. Furthermore, the effects of fluorine coating are also investigated. The friction coefficient of fluorine coated hydrophobic PU nanofiber (PUof) shows great decrease against the silicon wafer. Finally, wiping ability and friction property are investigated when the substrate surface is contaminated. Nano-particle dusts are effectively collected into the pores by wiping with PUo and PUi nanofiber webs both on glass and silicon wafer. The friction coefficient gradually increased with the increase of the applied load.

Electronic structure of silicon superlattices

International Nuclear Information System (INIS)

Krishnamurthy, S.; Moriarty, J.A.

1984-01-01

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

International Nuclear Information System (INIS)

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-01-01

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research

Theoretical Analysis of Spectral Correlations Between Photon Pairs Generated in Nanoscale Silicon Waveguides

International Nuclear Information System (INIS)

Lu Liang-Liang; Xu Ping; Xu Jian-Ning; Zhu Shi-Ning; He Guang-Qiang

2015-01-01

Spontaneous four wave mixing in nonlinear waveguide is one of the excellent technique for generating photon pairs in well-defined guided modes. Here we present a comprehensive study of the frequency characteristic of correlated photon pairs generated in telecom C-band from a dispersion-engineered silicon wire waveguide. We have demonstrated that the waveguide configuration, shape of pump pulse, two-photon absorption as well as linear losses have significant influences on the biphoton spectral characteristics and the amount of frequency entanglement generated. The superior performance as well as the structural compactness and CMOS compatibility makes the silicon wire waveguide an ideal integrated platform for the implementation of on-chip quantum technologies. (paper)

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

Study of irradiation induced defects in silicon

International Nuclear Information System (INIS)

Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

2000-01-01

Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

Science.gov (United States)

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures.

Science.gov (United States)

Huang, Yi-Fan; Chattopadhyay, Surojit; Jen, Yi-Jun; Peng, Cheng-Yu; Liu, Tze-An; Hsu, Yu-Kuei; Pan, Ci-Ling; Lo, Hung-Chun; Hsu, Chih-Hsun; Chang, Yuan-Huei; Lee, Chih-Shan; Chen, Kuei-Hsien; Chen, Li-Chyong

2007-12-01

Nature routinely produces nanostructured surfaces with useful properties, such as the self-cleaning lotus leaf, the colour of the butterfly wing, the photoreceptor in brittlestar and the anti-reflection observed in the moth eye. Scientists and engineers have been able to mimic some of these natural structures in the laboratory and in real-world applications. Here, we report a simple aperiodic array of silicon nanotips on a 6-inch wafer with a sub-wavelength structure that can suppress the reflection of light at a range of wavelengths from the ultraviolet, through the visible part of the spectrum, to the terahertz region. Reflection is suppressed for a wide range of angles of incidence and for both s- and p-polarized light. The antireflection properties of the silicon result from changes in the refractive index caused by variations in the height of the silicon nanotips, and can be simulated with models that have been used to explain the low reflection from moth eyes. The improved anti-reflection properties of the surfaces could have applications in renewable energy and electro-optical devices for the military.

Multi and mixed 3D-printing of graphene-hydroxyapatite hybrid materials for complex tissue engineering.

Science.gov (United States)

Jakus, Adam E; Shah, Ramille N

2017-01-01

With the emergence of three-dimensional (3D)-printing (3DP) as a vital tool in tissue engineering and medicine, there is an ever growing need to develop new biomaterials that can be 3D-printed and also emulate the compositional, structural, and functional complexities of human tissues and organs. In this work, we probe the 3D-printable biomaterials spectrum by combining two recently established functional 3D-printable particle-laden biomaterial inks: one that contains hydroxyapatite microspheres (hyperelastic bone, HB) and another that contains graphene nanoflakes (3D-graphene, 3DG). We demonstrate that not only can these distinct, osteogenic, and neurogenic inks be co-3D-printed to create complex, multimaterial constructs, but that composite inks of HB and 3DG can also be synthesized. Specifically, the printability, microstructural, mechanical, electrical, and biological properties of a hybrid material comprised of 1:1 HA:graphene by volume is investigated. The resulting HB-3DG hybrid exhibits mixed characteristics of the two distinct systems, while maintaining 3D-printability, electrical conductivity, and flexibility. In vitro assessment of HB-3DG using mesenchymal stem cells demonstrates the hybrid material supports cell viability and proliferation, as well as significantly upregulates both osteogenic and neurogenic gene expression over 14 days. This work ultimately demonstrates a significant step forward towards being able to 3D-print graded, multicompositional, and multifunctional constructs from hybrid inks for complex composite tissue engineering. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 274-283, 2017. © 2016 Wiley Periodicals, Inc.

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Electrical characterization of copper related defect reactions in silicon

Energy Technology Data Exchange (ETDEWEB)

Heiser, T. [Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. PHASE; Istratov, A.A.; Flink, C.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California at Berkeley, 577 Evans Hall, Berkeley, CA 94720 (United States)

1999-02-12

Defect reactions involving interstitial copper impurities (Cu{sub i}) in silicon are reviewed. The influence of the Coulomb interaction between positively charged copper and negatively charged defects, such as acceptor states of transition metals and lattice defects, on the complex formation rate is discussed in detail. The diffusivity of interstitial copper and the dissociation kinetics of copper-acceptor pairs are studied using the recently introduced transient ion drift (TID) method. TID results reveal that most interstitial copper impurities remain dissolved immediately after the quench and form pairs with shallow acceptors. It is shown that in moderately and heavily doped silicon the diffusivity of copper is trap limited, while in low B-doped silicon the interstitial copper-acceptor pairing is weak enough to allow the assessment of the copper intrinsic diffusion coefficient. The intrinsic diffusion barrier is estimated to be 0.18{+-}0.01 eV. It is concluded that the Coulomb potential used in previous publications underestimated considerably the acceptor-copper interaction. In light of these results, a general discussion on Cu related defect reactions is given. (orig.) 44 refs.

Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing

International Nuclear Information System (INIS)

Cheroux, L.

2001-01-01

Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

Silicon nanophotonics for scalable quantum coherent feedback networks

International Nuclear Information System (INIS)

Sarovar, Mohan; Brif, Constantin; Soh, Daniel B.S.; Cox, Jonathan; DeRose, Christopher T.; Camacho, Ryan; Davids, Paul

2016-01-01

The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism. (orig.)

Silicon nanophotonics for scalable quantum coherent feedback networks