Establishment of Ge-doped optical fibres as thermoluminescence dosimeters for brachytherapy

International Nuclear Information System (INIS)

Issa, Fatma; Abdul Rahman, A.T.; Hugtenburg, Richard P.; Bradley, David A.; Nisbet, Andrew

2012-01-01

This study aims to establish the sensitive, ∼120 μm high spatial resolution, high dynamic range Ge-doped optical fibres as thermoluminescence (TL) dosimeters for brachytherapy dose distribution. This requires investigation to accommodate sensitivity of detection, both for the possibility of short range dose deposition from beta components as well as gamma/x-mediated dose. In-air measurements are made at distances close to radionuclide sources, evaluating the fall off in dose along the transverse axis of 133 Ba and 60 Co radioactive sources, at distances from 2 mm up to 20 mm from their midpoints. Measurements have been compared with Monte Carlo code DOSRZnrc simulations for photon-mediated dose only, agreement being obtained to within 3% and 1% for the 133 Ba and 60 Co sources, respectively. As such, in both cases it is determined that as intended, beta dose has been filtered out by source encapsulation. - Highlights: ► We seek to establish Ge-doped optical fibres as TLDs for brachytherapy. ► Dose was evaluated along the central axis of 133 Ba and 60 Co, at 2 mm–20 mm. ► We verify values using DOSRZnrc Monte Carlo code simulations. ► Good agreement is between dose measurements and calculation to within 3% and 1%. ► Methodology is to be used in obtaining doses around 125 I and 192 Ir sources.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Science.gov (United States)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Establishment of Ge-doped optical fibres as thermoluminescence dosimeters for brachytherapy

Energy Technology Data Exchange (ETDEWEB)

Issa, Fatma, E-mail: f.issa@surrey.ac.uk [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Radiotherapy, Tripoli Medical Centre (TMC), Tripoli (Libya); Abdul Rahman, A.T. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia, Campus of Negeri Sembilan, 72000 Kuala Pilah (Malaysia); Hugtenburg, Richard P. [Department of Medical Physics and Clinical Engineering, Abertawe Bro Morgannwg UHB and School of Medicine, Swansea University, Swansea, SA2 8PP (United Kingdom); Bradley, David A. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Radiological Sciences, King Saud University, P.O. Box 10219, Riyadh 11432 (Saudi Arabia); Nisbet, Andrew [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Medical Physics, Royal Surrey County Hospital NHS Foundation Trust, Guildford, GU2 7XX (United Kingdom)

2012-07-15

This study aims to establish the sensitive, {approx}120 {mu}m high spatial resolution, high dynamic range Ge-doped optical fibres as thermoluminescence (TL) dosimeters for brachytherapy dose distribution. This requires investigation to accommodate sensitivity of detection, both for the possibility of short range dose deposition from beta components as well as gamma/x-mediated dose. In-air measurements are made at distances close to radionuclide sources, evaluating the fall off in dose along the transverse axis of {sup 133}Ba and {sup 60}Co radioactive sources, at distances from 2 mm up to 20 mm from their midpoints. Measurements have been compared with Monte Carlo code DOSRZnrc simulations for photon-mediated dose only, agreement being obtained to within 3% and 1% for the {sup 133}Ba and {sup 60}Co sources, respectively. As such, in both cases it is determined that as intended, beta dose has been filtered out by source encapsulation. - Highlights: Black-Right-Pointing-Pointer We seek to establish Ge-doped optical fibres as TLDs for brachytherapy. Black-Right-Pointing-Pointer Dose was evaluated along the central axis of {sup 133}Ba and {sup 60}Co, at 2 mm-20 mm. Black-Right-Pointing-Pointer We verify values using DOSRZnrc Monte Carlo code simulations. Black-Right-Pointing-Pointer Good agreement is between dose measurements and calculation to within 3% and 1%. Black-Right-Pointing-Pointer Methodology is to be used in obtaining doses around {sup 125}I and {sup 192}Ir sources.

Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

International Nuclear Information System (INIS)

Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

2015-01-01

In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

Ionizing Radiation Detectors Based on Ge-Doped Optical Fibers Inserted in Resonant Cavities

Directory of Open Access Journals (Sweden)

Saverio Avino

2015-02-01

Full Text Available The measurement of ionizing radiation (IR is a crucial issue in different areas of interest, from environmental safety and industrial monitoring to aerospace and medicine. Optical fiber sensors have recently proven good candidates as radiation dosimeters. Here we investigate the effect of IR on germanosilicate optical fibers. A piece of Ge-doped fiber enclosed between two fiber Bragg gratings (FBGs is irradiated with gamma radiation generated by a 6 MV medical linear accelerator. With respect to other FBG-based IR dosimeters, here the sensor is only the bare fiber without any special internal structure. A near infrared laser is frequency locked to the cavity modes for high resolution measurement of radiation induced effects on the fiber optical parameters. In particular, we observe a variation of the fiber thermo-optic response with the radiation dose delivered, as expected from the interaction with Ge defect centers, and demonstrate a detection limit of 360 mGy. This method can have an impact in those contexts where low radiation doses have to be measured both in small volumes or over large areas, such as radiation therapy and radiation protection, while bare optical fibers are cheap and disposable.

Novel high resolution 125I brachytherapy source dosimetry using Ge-doped optical fibres

International Nuclear Information System (INIS)

Issa, Fatma; Hugtenburg, Richard P.; Nisbet, Andrew; Bradley, David A.

2013-01-01

The steep dose gradients close to brachytherapy sources limit the ability to obtain accurate measurements of dose. Here we use a novel high spatial resolution dosimeter to measure dose around a 125 I source and compare against simulations. Ge-doped optical fibres, used as thermoluminescent dosimeters, offer sub-mm spatial resolution, linear response from 10 cGy to >1 kGy and dose-rate independence. For a 125 I brachytherapy seed in a PMMA phantom, doses were obtained for source-dosimeter separations from 0.1 cm up to several cm, supported by EGSnrc/DOSRZznrc Monte Carlo simulations and treatment planning system data. The measurements agree with simulations to within 2.3%±0.3% along the transverse and perpendicular axes and within 3.0%±0.5% for measurements investigating anisotropy in angular dose distribution. Measured and Veriseed™ brachytherapy treatment planning system (TPS) values agreed to within 2.7%±0.5%. Ge-doped optical fibre dosimeters allow detailed dose mapping around brachytherapy sources, not least in situations of high dose gradient. - Highlights: • We evaluate fall-off in dose for distances from an 125 I source of 1 mm to 60 mm. • The TL of optical fibres accommodate high dose gradients and doses that reduce by a factor of 10 3 across the range of separations. • We verify measured values using DOSRZnrc Monte Carlo code simulations and the Variseed™ Treatment Planning System. • Measured radial and angular dose are obtained with ≤3% uncertainty

Dose-rate and the reciprocity law: TL response of Ge-doped SiO2 optical fibers at therapeutic radiation doses

International Nuclear Information System (INIS)

Abdul Rahman, A.T.; Nisbet, A.; Bradley, D.A.

2011-01-01

An investigation has been made on commercially available Ge-doped SiO 2 optical fibers as a novel thermoluminescence system for radiotherapy dosimetry. This dosimeter has previously been shown by the group to provide sensitive dosimetry over a wide range of electron and photon dose, suitable for the needs of radiotherapy. In addition the optical fiber offers small physical size (125 μm diameter) and hence high spatial resolution. The reciprocity between thermoluminescence (TL) yield of Ge-doped SiO 2 optical fibers and dose has been investigated for fixed radiation dose for a range of photon and electron dose rates. For electron beams of nominal energies in the range of 9-20 MeV, we have investigated the TL response of these fibers for dose rates between 100 and 1000 cGy min -1 . For photon beams of nominal energies in the range of 6-15 MV, we have used dose rates of 100-600 cGy min -1 . Reproducibility and fading at fixed absorbed dose (3 Gy) and dose rate for the optical fibers were also investigated. At fixed dose rates, the TL optical fibers were found to produce a flat TL yield within 4% (1σ) and 3% (1σ) for electron and photon beams, respectively. The optical fibers demonstrated good reproducibility (±1.5%), low residual signal for a readout temperature of 300 o C and negligible fading. A weak dependence on dose-rate has been observed in the range of 3.4-3.9% for electrons (with an associated uncertainty of 4%) and 2.4-2.9% for photons (with an associated uncertainty of <4%). For electron and photon energies we note a consistent trend towards lower response in the TL yield of between 3.4-3.9% and 2.4-2.7%, respectively, at the higher dose rates in comparison with the response at lower dose rates. In addition we note an appreciable systematic energy dependence for both electron and photon beams. It is important to take such factors into account for providing precise and accurate radiotherapy dosimetry. It is also apparent that the optical fibers can be re

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

NARCIS (Netherlands)

Eising, Gert; Pauza, Andrew; Kooi, Bart J.

The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

Dose-rate and the reciprocity law: TL response of Ge-doped SiO{sub 2} optical fibers at therapeutic radiation doses

Energy Technology Data Exchange (ETDEWEB)

Abdul Rahman, A.T., E-mail: a.t.abdulrahman@surrey.ac.uk [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom); School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia (UiTM), Campus of Negeri Sembilan, 72000 Kuala Pilah (Malaysia); Nisbet, A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom); Departments of Medical Physics, the Royal Surrey County Hospital (RSCH) NHS Trust, Edgerton Road, Guildford GU2 7XX, Surrey (United Kingdom); Bradley, D.A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom)

2011-10-01

An investigation has been made on commercially available Ge-doped SiO{sub 2} optical fibers as a novel thermoluminescence system for radiotherapy dosimetry. This dosimeter has previously been shown by the group to provide sensitive dosimetry over a wide range of electron and photon dose, suitable for the needs of radiotherapy. In addition the optical fiber offers small physical size (125 {mu}m diameter) and hence high spatial resolution. The reciprocity between thermoluminescence (TL) yield of Ge-doped SiO{sub 2} optical fibers and dose has been investigated for fixed radiation dose for a range of photon and electron dose rates. For electron beams of nominal energies in the range of 9-20 MeV, we have investigated the TL response of these fibers for dose rates between 100 and 1000 cGy min{sup -1}. For photon beams of nominal energies in the range of 6-15 MV, we have used dose rates of 100-600 cGy min{sup -1}. Reproducibility and fading at fixed absorbed dose (3 Gy) and dose rate for the optical fibers were also investigated. At fixed dose rates, the TL optical fibers were found to produce a flat TL yield within 4% (1{sigma}) and 3% (1{sigma}) for electron and photon beams, respectively. The optical fibers demonstrated good reproducibility ({+-}1.5%), low residual signal for a readout temperature of 300 {sup o}C and negligible fading. A weak dependence on dose-rate has been observed in the range of 3.4-3.9% for electrons (with an associated uncertainty of 4%) and 2.4-2.9% for photons (with an associated uncertainty of <4%). For electron and photon energies we note a consistent trend towards lower response in the TL yield of between 3.4-3.9% and 2.4-2.7%, respectively, at the higher dose rates in comparison with the response at lower dose rates. In addition we note an appreciable systematic energy dependence for both electron and photon beams. It is important to take such factors into account for providing precise and accurate radiotherapy dosimetry. It is also

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

Science.gov (United States)

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

2016-05-01

Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

2-μm optical time domain reflectometry measurements from novel Al-, Ge-, CaAlSi- doped and standard single-mode fibers

Science.gov (United States)

Rodriguez-Novelo, J. C.; Sanchez-Nieves, J. A.; Sierra-Calderon, A.; Sanchez-Lara, R.; Alvarez-Chavez, J. A.

2017-08-01

The development of novel Al-, Ge- doped and un-doped standard single mode fibers for future optical communication at 2μm requires the integration of, among other pieces of equipment, an optical time domain reflectometry (OTDR) technique for precise spectral attenuation characterization, including the well-known cut-back method. The integration of a state of the art OTDR at 2μm could provide valuable attenuation information from the aforementioned novel fibers. The proposed setup consists of a 1.7 mW, 1960nm pump source, a 30 dB gain Thulium doped fibre amplifier at 2μm, an 0.8mm focal length lens with a 0.5 NA, a 30 MHz acusto-optic modulator, a 3.1 focal length lens with a 0.68NA, an optical circulator at 2μm, an InGaAs photodetector for 1.2 nm-2.6 nm range, a voltage amplifier and an oscilloscope. The propagated pulse rate is 50 KHz, with 500 ns, 200 ns, 100 ns and 50 ns pulse widths. Attenuation versus novel fibers types for lengths ranging from 400- to 1000- meter samples were obtained using the proposed setup.

The thermoluminescence response of Ge-doped flat fibre for proton beam measurements: A preliminary study

International Nuclear Information System (INIS)

Hassan, M F; Fadzil, M S Ahmad; Noor, N Mohd; Abdul Rahman, W N Wan; Tominaga, T; Geso, M; Akasaka, H; Bradley, D A

2017-01-01

The aim of this study was to investigate the thermoluminescence (TL) response of fabricated 2.3 mol% and 6.0 mol% germanium (Ge) doped flat optical fibres to proton irradiation. The fundamental dosimetric characteristics of the fibres have been investigated including dose linearity, reproducibility and fading. The thermoluminescent dosimeters (TLDs) were used as a reference dosimeter to allow the relative response of the fibres. The results show that Ge-doped flat fibres offer excellent dose linearity over the dose range from 1 Gy up to 10 Gy with correlation of determination (R 2 ) of 0.99. The fibres also demonstrated good reproducibility within the standard deviation (SD) of 0.86% to 6.41%. After 96 days post-irradiation, TLD-100 chips gave rise to the least loss in TL signal at around 18% followed by fabricated 2.3 mol% Ge-doped flat fibres about 24%. This preliminary study has demonstrated that the proposed fabricated Ge-doped flat fibre offers a promising potential for use in proton beam measurements. (paper)

Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

Science.gov (United States)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

Germanium-doped optical fiber for real-time radiation dosimetry

International Nuclear Information System (INIS)

Mizanur Rahman, A.K.M.; Zubair, H.T.; Begum, Mahfuza; Abdul-Rashid, H.A.; Yusoff, Z.; Ung, N.M.; Mat-Sharif, K.A.; Wan Abdullah, W.S.; Amouzad Mahdiraji, Ghafour; Amin, Y.M.; Maah, M.J.; Bradley, D.A.

2015-01-01

Over the past three decades growing demand for individualized in vivo dosimetry and subsequent dose verification has led to the pursuit of newer, novel and economically feasible materials for dosimeters. These materials are to facilitate features such as real-time sensing and fast readouts. In this paper, purposely composed SiO 2 :Ge optical fiber is presented as a suitable candidate for dosimetry. The optical fiber is meant to take advantage of the RL/OSL technique, providing both online remote monitoring of dose rate, and fast readouts for absorbed dose. A laboratory-assembled OSL reader has been used to acquire the RL/OSL response to LINAC irradiations (6 MV photons). The notable RL characteristics observed include constant level of luminescence for the same dose rate (providing better consistency compared to TLD-500), and linearity of response in the radiotherapy range (1 Gy/min to 6 Gy/min). The OSL curve was found to conform to an exponential decay characteristic (illumination with low LED source). The Ge doping resulted in an effective atomic number, Z eff , of 13.5 (within the bone equivalent range). The SiO 2 :Ge optical fiber sensor, with efficient coupling, can be a viable solution for in vivo dosimetry, besides a broad range of applications. - Highlights: • Purposely fabricated Ge doped silica fiber for real-time dose measurements. • Constant RL response for dose rates in radiotherapy range. • Linearity of RL curve during irradiation using LINAC. • RL response comparison between SiO 2 :Ge optical fiber and TLD-500.

Neutron transmutation doped Ge bolometers

Science.gov (United States)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

Science.gov (United States)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

International Nuclear Information System (INIS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

2014-01-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

Science.gov (United States)

Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

2016-11-15

In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Thermoelectric Performance of Na-Doped GeSe

NARCIS (Netherlands)

Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

2017-01-01

Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

Influence of dose history on thermoluminescence response of Ge-doped silica optical fibre dosimeters

International Nuclear Information System (INIS)

Moradi, F.; Mahdiraji, G.A.; Dermosesian, E.; Khandaker, M.U.; Ung, N.M.; Mahamd Adikan, F.R.; Amin, Y.M.

2017-01-01

Nowadays, silica based optical fibres show enough potential to be used as TL dosimeters in different applications. Reuse of optical fibre as a practical dosimeter demands to complete removal of accumulated doses via previous irradiations. This work investigates the existence and/or effect of remnant doses in fibre dosimeter from the previous irradiations, and proposes a method to control this artifact. A single mode Ge-doped optical fibre is used as TL radiation sensor, while a well calibrated Gammacell with 60 Co source is used for irradiations. The effect of irradiation history on the TL response of optical fibres is surveyed extensively for doses ranged from 1 to 1000 Gy. The results show that the absorbed dose history in a fibre affects its response in the next irradiation cycles. It is shown that a dose history of around 100 Gy can increase the response of optical fibre by a factor of 1.72. The effect of annealing at higher temperatures on stabilizing the fibre response is also examined and results revealed that another alteration in the structure of trapping states occurs in glass medium which can change the sensitivity of fibres. Preservation of the sensitivity during successive irradiation cycles can be achieved by a proper annealing procedure accompanied by a pre-dose treatment. - Highlights: • Influence of dose history on TL characteristics of fibre dosimeter is explored. • The phenomenon behind the TL variation caused by dose history is discussed. • Effect of annealing temperature on performance of fibre dosimeter is studied. • Pre-treatment methods for mitigating variation in reproducibility are proposed.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

International Nuclear Information System (INIS)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

2012-01-01

We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

Science.gov (United States)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

Cathodoluminescence investigation of Ge-point defects in silica-based optical fibers

Energy Technology Data Exchange (ETDEWEB)

Reghioua, I., E-mail: imene.reghioua@univ-st-etienne.fr [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Girard, S.; Alessi, A.; Di Francesca, D. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Martin-Samos, L.; Fanetti, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Richard, N.; Raine, M. [CEA, DAM, DIF, F91297, Arpajon (France); Valant, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Boukenter, A.; Ouerdane, Y. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France)

2016-11-15

Cathodoluminescence (CL) measurements have been performed on Ge doped and Ge/F co-doped optical fibers, in the aim of studying the spatial distributions of the emitting precursor defects present in the as-drawn optical fiber as well as those of the radiation induced centers generated by the 10 keV electron exposure. Using the CL instrument, we recorded different emission bands located in the visible spectral domain (300–750 nm) as well as CL imaging of associated defects, with a spatial resolution of about 1 µm, along the fiber transverse cross sections. In the pristine fiber, Germanium Lone Pair Centers (GLPCs) emitting at 400 nm are the main precursor sites observed in both fibers. Whereas during electron exposure, these centers are converted into other Ge-related defects. In this paper, we studied in situ their bleaching kinetic using CL monochromatic imaging. As expected, our results show that the GLPC signal decreases with the electron fluence, confirming its precursor role. Thanks to the CL abilities, we also demonstrate that the GLPC conversion into radiation induced defects (and then its bleaching kinetic) depends on the germanium concentration, opening the way to a better control of the radiation sensitivity of germanosilicate glass.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan

2018-04-03

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

2018-01-01

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Directory of Open Access Journals (Sweden)

Shoichi Kabuyanagi

2016-01-01

Full Text Available We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge. By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

Thermal Stability and Optical Activity of Erbium Doped Chalcogenide Glasses for Photonics

Science.gov (United States)

Tonchev, D.; Koughia, K.; Kasap, S. O.; Maeda, K.; Sakai, T.; Ikuta, J.; Ivanova, Z. G.

The glass transition and crystallization temperatures (T g , T c ), heat capacity, thermal stability and glass uniformity of GeSGa, GeSeGa, Ge(SeTe)Ga chalcogenide glasses doped with Er3+ by the addition of Er2S3 have been investigated by conventional differential scanning calorimetry (DSC) and Temperature-Modulated DSC (TMDSC). While some of the glasses have two crystallization peaks, these glasses were nonetheless optically actively and uniform. Essential optical properties have been evaluated, such as the photoluminescence (PL) intensity and lifetime as a function of the glass composition. We present typical results to emphasize some of the important characteristics of these systems and discuss trends within a glass system; and also highlight differences between glass systems.

Thermoluminescence properties of Yb-Tb-doped SiO2 optical fiber subject to 6 and 10 MV photon irradiation

Science.gov (United States)

Sahini, M. H.; Wagiran, H.; Hossain, I.; Saeed, M. A.; Ali, H.

2014-08-01

This paper reports thermoluminescence characteristics of thermoluminescence dosimetry 100 chips and Yb-Tb-doped optical fibers irradiated with 6 and 10 MV photons. Thermoluminescence response of both dosimeters increases over a wide photon dose range from 0.5 to 4 Gy. Yb-Tb-doped optical fibers demonstrate useful thermoluminescence properties and represent a good candidate for thermoluminescence dosimetry application with ionizing radiation. The results of this fiber have been compared with those of commercially available standard thermoluminescence dosimetry-100 media. Commercially available Yb-Tb-doped optical fibers and said standard media are found to yield a linear relationship between dose- and thermoluminescence signal, although Yb-Tb-doped optical fibers provide only 10 % of the sensitivity of thermoluminescence dosimetry-100. With better thermoluminescence characteristics such as small size (125 μm diameter), high flexibility, easy of handling and low cost, as compared to other thermoluminescence materials, indicate that commercial Yb-Tb-doped optical fiber is a promising thermoluminescence material for variety of applications.

Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

Science.gov (United States)

Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

2017-09-01

Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material

International Nuclear Information System (INIS)

Zhang, Linchuan; Sa, Baisheng; Zhou, Jian; Sun, Zhimei; Song, Zhitang

2014-01-01

GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

Electronic structure of O-doped SiGe calculated by DFT + U method

Science.gov (United States)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

2016-09-15

Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

DEFF Research Database (Denmark)

Vincent, B.; Gencarelli, F.; Bender, H.

2011-01-01

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

International Nuclear Information System (INIS)

Bogumilowicz, Y.; Hartmann, J.M.

2014-01-01

We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

Ge{sup 4+} doped TiO{sub 2} for stoichiometric degradation of warfare agents

Energy Technology Data Exchange (ETDEWEB)

Stengl, Vaclav, E-mail: stengl@iic.cas.cz [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Grygar, Tomas Matys [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Oplustil, Frantisek; Nemec, Tomas [Military Technical Institute of Protection Brno, Veslarska 230, 628 00 Brno (Czech Republic)

2012-08-15

Highlights: Black-Right-Pointing-Pointer We prepared nanodisperse Ge{sup 4+} doped titania by a novel synthesis method. Black-Right-Pointing-Pointer Synthesis does not involve organic solvents, organometallics nor thermal processes. Black-Right-Pointing-Pointer The prepared materials are efficient in removal of chemical warfare agents. Black-Right-Pointing-Pointer Ge{sup 4+} doping improves rate of removal of soman and agent VX by TiO{sub 2}. - Abstract: Germanium doped TiO{sub 2} was prepared by homogeneous hydrolysis of aqueous solutions of GeCl{sub 4} and TiOSO{sub 4} with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge{sup 4+} doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge{sup 4+} doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2 wt.% of germanium.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-11-07

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

2013-01-01

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

Oxidation-resistant Ge-doped silicide coating on Cr-Cr2Nb alloys by pack cementation

International Nuclear Information System (INIS)

He Yirong

1997-01-01

The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on Cr-Cr 2 Nb alloys in a single processing step. The morphology and composition of the coating depended both on the pack composition and processing schedule and also on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi 2 and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. Under cyclic and isothermal oxidation conditions, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation and from pesting by the formation of a Ge-doped silica film. (orig.)

Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

International Nuclear Information System (INIS)

Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

2008-01-01

Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

Review of doped silica glass optical fibre: Their TL properties and potential applications in radiation therapy dosimetry

International Nuclear Information System (INIS)

Bradley, D.A.; Hugtenburg, R.P.; Nisbet, A.; Abdul Rahman, Ahmad Taufek; Issa, Fatma; Mohd Noor, Noramaliza; Alalawi, Amani

2012-01-01

Review is made of dosimetric studies of Ge-doped SiO 2 telecommunication fibre as a 1-D thermoluminescence (TL) system for therapeutic applications. To-date, the response of these fibres has been investigated for UV sources, superficial X-ray beam therapy facilities, a synchrotron microbeam facility, electron linear accelerators, protons, neutrons and alpha particles, covering the energy range from a few eV to several MeV. Dosimetric characteristics include, reproducibility, fading, dose response, reciprocity between TL yield and dose-rate and energy dependence. The fibres produce a flat response to fixed photon and electron doses to within better than 3% of the mean TL distribution. Irradiated Ge-doped SiO 2 optical fibres show limited signal fading, with an average loss of TL signal of ∼0.4% per day. In terms of dose response, Ge-doped SiO 2 optical fibres have been shown to provide linearity to x and electron doses, from a fraction of 1 Gy up to 2 kGy. The dosimeters have also been used in measuring photoelectron generation from iodinated contrast media; TL yields being some 60% greater in the presence of iodine than in its absence. The review is accompanied by previously unpublished data. - Highlights: ► We review our TLD studies of Ge-doped SiO 2 fibres for therapeutic applications. ► Sources include UV, X-rays, protons, neutrons and alpha particles. ► These TLDs have also been used to measure photoelectrons from I 2 contrast media. ► The review is accompanied by previously unpublished data.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Energy Technology Data Exchange (ETDEWEB)

Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

2013-12-02

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

International Nuclear Information System (INIS)

Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

2013-01-01

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

The nitrogen doping effect on the properties of Ge-In-Sb-Te phase-change recording media investigated by blue-light laser

International Nuclear Information System (INIS)

Yeh, T.-T.; Hsieh, T.-E.; Shieh, H.-P.D.

2005-01-01

This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge-In-Sb-Te (GIST) phase-change material when irradiated by blue-light laser. The experimental results showed that nitrogen doping at the condition of N 2 /Ar sputtering gas flow ratio equals to 3% might enhance the recrystallization speed of GIST recording layer up to 1.5 times. However, the disk failed when too much nitrogen (N 2 /Ar ≥ 5.0%) was introduced. The data obtained by differential scanning calorimetry, X-ray diffraction and ellipsometry revealed changes of thermal and optical properties due to the nitrogen doping in GIST. When appropriate amount of nitrogen was added, the activation energy (E a ) of amorphous-crystalline phase transition of GIST decreased and the optical constants of amorphous and crystalline phases (except the k value of amorphous phase) gradually reduced with the increase of wavelength in the range of 600-750 nm. Modulation simulation based on the reflectively of doped GIST layers obtained from static test indicated that appropriate nitrogen doping benefited the signal characteristics of optical disks. Transmission electron microscopy observed numerous tiny precipitates uniformly distributed in the doped GIST layers. These were believed to be nitride particles generated by nitrogen doping that might offer the preferential sites for amorphous-crystalline phase transition so that the recrystallization speed was accelerated

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Linear and nonlinear optical characteristics of Te nanoparticles-doped germanate glasses

Science.gov (United States)

Xu, Zhousu; Guo, Qiangbing; Liu, Chang; Ma, Zhijun; Liu, Xiaofeng; Qiu, Jianrong

2016-10-01

Te nanoparticles (NPs)-doped GeO2-MgO-B2O3-Al2O3-TeO2 glasses were prepared by the conventional melt-quenching method. Based on X-ray photoelectron spectroscopy, Raman spectroscopy and transmission electron microscope observation, the coloration of the glass at high TeO2 concentration is ascribed to the precipitation of elemental Te NPs with a size of 5-10 nm in the germanate glass. Optical absorption spectra and nonlinear optical (NLO) properties of the glass samples were analyzed by UV-3600 spectrophotometry and Z-scan technique, respectively. The nonlinear absorption coefficient ( β) and the imaginary part of the third-order NLO susceptibility (Im χ (3)) were estimated to be 1.74 cm/GW and 1.142 × 10-12 esu for laser power of 95 μW, respectively. Due to the excellent NLO properties, the Te NPs-doped germanate glasses may have potential applications for ultrafast optical switch and photonics.

Comparison of methods for the measurement of radiation dose distributions in high dose rate (HDR) brachytherapy: Ge-doped optical fiber, EBT3 Gafchromic film, and PRESAGE® radiochromic plastic

International Nuclear Information System (INIS)

Palmer, A. L.; Di Pietro, P.; Alobaidli, S.; Issa, F.; Doran, S.; Bradley, D.; Nisbet, A.

2013-01-01

Purpose: Dose distribution measurement in clinical high dose rate (HDR) brachytherapy is challenging, because of the high dose gradients, large dose variations, and small scale, but it is essential to verify accurate treatment planning and treatment equipment performance. The authors compare and evaluate three dosimetry systems for potential use in brachytherapy dose distribution measurement: Ge-doped optical fibers, EBT3 Gafchromic film with multichannel analysis, and the radiochromic material PRESAGE ® with optical-CT readout. Methods: Ge-doped SiO 2 fibers with 6 μm active core and 5.0 mm length were sensitivity-batched and their thermoluminescent properties used via conventional heating and annealing cycles. EBT3 Gafchromic film of 30 μm active thickness was calibrated in three color channels using a nominal 6 MV linear accelerator. A 48-bit transmission scanner and advanced multichannel analysis method were utilized to derive dose measurements. Samples of the solid radiochromic polymer PRESAGE ® , 60 mm diameter and 100 mm height, were analyzed with a parallel beam optical CT scanner. Each dosimetry system was used to measure the dose as a function of radial distance from a Co-60 HDR source, with results compared to Monte Carlo TG-43 model data. Each system was then used to measure the dose distribution along one or more lines through typical clinical dose distributions for cervix brachytherapy, with results compared to treatment planning system (TPS) calculations. Purpose-designed test objects constructed of Solid Water and held within a full-scatter water tank were utilized. Results: All three dosimetry systems reproduced the general shape of the isolated source radial dose function and the TPS dose distribution. However, the dynamic range of EBT3 exceeded those of doped optical fibers and PRESAGE ® , and the latter two suffered from unacceptable noise and artifact. For the experimental conditions used in this study, the useful range from an isolated

Comparison of methods for the measurement of radiation dose distributions in high dose rate (HDR) brachytherapy: Ge-doped optical fiber, EBT3 Gafchromic film, and PRESAGE® radiochromic plastic.

Science.gov (United States)

Palmer, A L; Di Pietro, P; Alobaidli, S; Issa, F; Doran, S; Bradley, D; Nisbet, A

2013-06-01

Dose distribution measurement in clinical high dose rate (HDR) brachytherapy is challenging, because of the high dose gradients, large dose variations, and small scale, but it is essential to verify accurate treatment planning and treatment equipment performance. The authors compare and evaluate three dosimetry systems for potential use in brachytherapy dose distribution measurement: Ge-doped optical fibers, EBT3 Gafchromic film with multichannel analysis, and the radiochromic material PRESAGE(®) with optical-CT readout. Ge-doped SiO2 fibers with 6 μm active core and 5.0 mm length were sensitivity-batched and their thermoluminescent properties used via conventional heating and annealing cycles. EBT3 Gafchromic film of 30 μm active thickness was calibrated in three color channels using a nominal 6 MV linear accelerator. A 48-bit transmission scanner and advanced multichannel analysis method were utilized to derive dose measurements. Samples of the solid radiochromic polymer PRESAGE(®), 60 mm diameter and 100 mm height, were analyzed with a parallel beam optical CT scanner. Each dosimetry system was used to measure the dose as a function of radial distance from a Co-60 HDR source, with results compared to Monte Carlo TG-43 model data. Each system was then used to measure the dose distribution along one or more lines through typical clinical dose distributions for cervix brachytherapy, with results compared to treatment planning system (TPS) calculations. Purpose-designed test objects constructed of Solid Water and held within a full-scatter water tank were utilized. All three dosimetry systems reproduced the general shape of the isolated source radial dose function and the TPS dose distribution. However, the dynamic range of EBT3 exceeded those of doped optical fibers and PRESAGE(®), and the latter two suffered from unacceptable noise and artifact. For the experimental conditions used in this study, the useful range from an isolated HDR source was 5-40 mm for

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Science.gov (United States)

Schlangen, Sebastian; Bremer, Kort; Zheng, Yulong; Böhm, Sebastian; Steinke, Michael; Wellmann, Felix; Neumann, Jörg; Overmeyer, Ludger

2018-01-01

Long-period fiber gratings (LPGs) are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge)-doped fused silica fiber cores) are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application. PMID:29702600

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

Directory of Open Access Journals (Sweden)

Sebastian Schlangen

2018-04-01

Full Text Available Long-period fiber gratings (LPGs are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge-doped fused silica fiber cores are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application.

Elevated transition temperature in Ge doped VO2 thin films

Science.gov (United States)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

Science.gov (United States)

Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

2018-04-01

The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

Simulation of hole-mobility in doped relaxed and strained Ge layers

Science.gov (United States)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

Collapsed optical fiber: A novel method for improving thermoluminescence response of optical fiber

Energy Technology Data Exchange (ETDEWEB)

Mahdiraji, G. Amouzad, E-mail: ghafour@um.edu.my [Integrated Lightwave Research Group, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Adikan, F.R. Mahamd [Integrated Lightwave Research Group, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Bradley, D.A. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2015-05-15

A new technique is shown to provide improved thermoluminescence (TL) response from optical fibers, based on collapsing down hollow capillary optical fibers (COF) into flat fibers (FF), producing fused inner walls and consequent defects generation. Four different fused silica preform tubes are used to fabricate in-house COFs and FFs, i.e., ultra-pure (F300), relatively pure silica (PS), germanium-doped (Ge), and Ge–Boron-doped (GeB). The optical fibers are then subjected to 6 MeV electron irradiation. While the results show similar TL response from F300-COF and -FF, the TL response of PS-COF is improved by a factor of 6 by collapsing it down to a FF. By doping Ge into the F300 tube, the TL response of the resultant Ge-COF shows an improvement of 3 times over that of F300-COF, while an improvement of a factor of 12 is obtained by producing a Ge-FF. In GeB preform, by collapsing the capillary fiber into a FF, an improvement in TL response of 31 times that of GeB-COF is obtained. TL glow curve analysis shows an additional peak to be generated in the FFs compared to that observed in the COFs. The TL intensity value of the new peak is significantly increased in the doped FFs compared to the undoped FFs. The results suggest that defects generation occurs as a result of the fusing/collapsing technique, providing a TL response from the optical fibers that can substantially improve upon that of existing TL system sensitivities. - Highlights: • A new method for increasing TL response of optical fiber is presented. • By collapsing capillary fiber wall surface, TL response of the fiber increased. • By adding impurity in the collapsing area, TL response significantly improved.

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Science.gov (United States)

Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

2018-01-01

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

Energy Technology Data Exchange (ETDEWEB)

Fallica, Roberto; Longo, Massimo; Wiemer, Claudia [Laboratorio MDM, IMM-CNR, Agrate Brianza (Italy); Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona [Micron Semiconductor Italia, Agrate Brianza (Italy)

2013-12-15

The 3{omega} method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (-25%) than in the crystalline one (-40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO{sub 2}, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

DEFF Research Database (Denmark)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

2012-01-01

to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

Effect of low dose rate irradiation on doped silica core optical fibers

International Nuclear Information System (INIS)

Friebele, E.J.; Askins, C.G.; Gingerich, M.E.

1984-01-01

The optical attenuation induced in multimode doped silica core optical fiber waveguides by a year's exposure to low dose rate (1 rad/day) ionizing radiation was studied, allowing a characterization of fibers deployed in these environments and a determination of the permanent induced loss in the waveguides. Variations in the induced attenuation at 0.85 μm have been observed with changes in the dose rate between 1 rad/day and 9000 rads/min. These dose rate dependences have been found to derive directly from the recovery that occurs during the exposure; the recovery data predict little or no dose rate dependence of the damage at 1.3 μm. The low dose rate exposure has been found to induce significant permanent attenuation in the 0.7-1.7-μm spectral region in all fibers containing P in the core, whether doped uniformly across the diameter or constrained to a narrow spike on the centerline. Whereas permanent loss was induced at 0.85 μm in a P-free binary Ge-doped silica core fiber by the year's exposure, virtually no damage was observed at 1.3 μm

Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2017-02-15

Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electro-optical 1 x 2, 1 x N and N x N fiber-optic and free-space switching over 1.55 to 3.0 μm using a Ge-Ge(2)Sb(2)Te(5)-Ge prism structure.

Science.gov (United States)

Hendrickson, Joshua; Soref, Richard; Sweet, Julian; Majumdar, Arka

2015-01-12

New device designs are proposed and theoretical simulations are performed on electro-optical routing switches in which light beams enter and exit the device either from free space or from lensed fibers. The active medium is a ~100 nm layer of phase change material (Ge(2)Sb(2)Te(5) or GeTe) that is electrically "triggered" to change its phase, giving "self-holding" behavior in each of two phases. Electrical current is supplied to that film by a pair of transparent highly doped conducting Ge prisms on both sides of the layer. For S-polarized light incident at ~80° on the film, a three-layer Fabry-Perot analysis, including dielectric loss, predicts good 1 x 2 and 2 x 2 switch performance at infrared wavelengths of 1.55, 2.1 and 3.0 μm, although the performance at 1.55 μm is degraded by material loss and prism mismatch. Proposals for in-plane and volumetric 1 x 4 and 4 x 4 switches are also presented. An unpolarized 1 x 2 switch projects good performance at mid infrared.

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

Directory of Open Access Journals (Sweden)

K. R. Simov

2018-01-01

Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

The metallization of Ge-doped plastics

International Nuclear Information System (INIS)

Huser, G.; Recoules, V.; Salin, G.; Galmiche, D.; Ozaki, N.; Miyanishi, K.; Kodama, R.; Sano, T.; Sakawa, Y.

2013-01-01

Ge-doped plastics are used in inertial fusion targets. Doped plastics are complex mixtures and the validation of their properties in a broad range of thermodynamic conditions requires an experimental validation. The metallization of plastics appears when shock waves generated by power lasers create pressures around 10 6 bar and temperatures around 10.000 K. The shock front propagating in the plastic becomes reflective. We have performed experiments to test the mathematical models describing the compressibility of such materials. We have compared the Thomas-Fermi model that is implemented in the QEOS formalism (Quotidian Equation of State) with 2 other models: the Sommerfeld metal model and a model that allows the closure of the semi-conducting gap. It appears that the Thomas-Fermi model predicts satisfactorily the compressibility of a mixture compressed at a few 10 6 bars, but over-estimates the average ionisation by a factor up to 10 which leads to an over-estimation of the metallization step

Total dose hardness of a commercial SiGe BiCMOS technology

International Nuclear Information System (INIS)

Van Vonno, N.; Lucas, R.; Thornberry, D.

1999-01-01

Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

2014-01-01

Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

Processing and optical characterization of lead calcium titanate borosilicate glass doped with germanium

Science.gov (United States)

Gautam, C. R.; Das, Sangeeta; Gautam, S. S.; Madheshiya, Abhishek; Singh, Anod Kumar

2018-04-01

In this study, various compositions of lead calcium titanate borosilicate glass doped with a fixed amount of germanium were synthesized using the rapid melt quench technique. The amorphous nature of the synthesized glass was confirmed by X-ray diffraction and scanning electron microscopy analyses. The structural and optical properties were deduced using Raman, Fourier transform infrared (FTIR), and ultraviolet-visible (UV-Vis) spectroscopy. FTIR spectroscopy confirmed the presence of borate groups in triangular and tetrahedral coordination. Infrared and Raman analyses detected the vibrational bonds of Gesbnd Osbnd Ge, Bsbnd Osbnd Ge, Sisbnd Osbnd Ge, Sisbnd Osbnd Si, and Pbsbnd Osbnd Ge. The energy band gaps were evaluated for the prepared glass samples based on Tauc plots of the UV-Vis spectra. The calculated values of the optical band gap decreased from 2.91 to 2.85 eV as the PbO content increased from x = 0.0 to x = 0.7. Furthermore, the Urbach energy was studied based on the UV-Vis results to confirm the disordered structure of the glass. The calculated densities of the glass samples (1.5835 g/cm3 to 3.9184 g/cm3) increased as the concentration of PbO increased, whereas they decreased with the molar volume.

A novel red phosphor Mg2GeO4 doped with Eu3+ for PDP applications

International Nuclear Information System (INIS)

Yang Hongmei; Shi Jianxin; Liang Hongbin; Gong Menglian

2006-01-01

A novel red emitting phosphor, Eu 3+ -doped Mg 2 GeO 4 , was prepared by the solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Mg 2 GeO 4 :Eu 3+ . Field-emission-scanning electron microscopy (FE-SEM) observation indicated a narrow size-distribution of about 0.5-2 μm nm for the particles with spindle-like shape. Photoluminescence (PL) and vacuum ultraviolet (VUV) excitation characteristics of the phosphor Mg 2 GeO 4 :Eu 3+ were studied. We have also studied the effect of preparation conditions such as temperature, heating time on the PL data. Photoluminescence measurements indicated that the phosphor exhibits bright red emission at about 609 nm under UV excitation. And the vacuum ultraviolet spectra present that the novel red phosphor Mg 2 GeO 4 :Eu 3+ shows strong absorption in the VUV region, which ensures the efficient absorption of the Xe plasma emission lines. The phosphor Mg 2 GeO 4 :Eu 3+ shows the strongest emission at 613 nm corresponding to the electric dipole 5 D - 7 F 2 transition of Eu 3+ excited at 147 nm. The optical properties study suggests that it is a potential candidate for plasma display panels (PDPs) application

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Science.gov (United States)

Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

2012-02-02

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Gamma-ray irradiation resistance of silver doped GeS2–Ga2S3–AgI chalcohalide glasses

International Nuclear Information System (INIS)

Shen, W.; Baccaro, S.; Cemmi, A.; Ren, J.; Zhang, Z.; Zhou, Y.; Yang, Y.; Chen, G.

2014-01-01

Highlights: • The γ-ray irradiation resistance of Ag doped chalcohalide glasses (GeS 2 –Ga 2 S 3 –AgI) has been investigated. • The introduction of silver ions plays a specific role in the modification of the gamma-ray irradiation resistance of glasses. • The sulfur exerts an important effect on the photo-sensitivity of chalcogenide glasses. - Abstract: In the present work, series of silver doped Ge–Ga–S–AgI chalcohalide glasses have been prepared and their optical transmission spectra are compared before and after γ-ray irradiation at different doses. The differential transmission spectra of the irradiated samples with and without Ag doping have been compared to characterize the γ-ray irradiation induced red-shift of electronic absorption and formation of color centers. Ag doping plays an important role in increasing γ-ray irradiation resistance of the chalcohalide glasses due to its specific effect on the valence band and the network structure of glasses

Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

International Nuclear Information System (INIS)

Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

1988-01-01

Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

Pr3 + -doped GeSx-based glasses for fiber amplifiers at 1.3 µm

Science.gov (United States)

Simons, D. R.; Faber, A. J.; de Waal, H.

1995-03-01

The photoluminescence properties of Pr3+ -doped GeS x -based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-containing glasses in the telecommunications window at 1.3 mu m is discussed.

Pr3+-doped GeSx-based glasses for fiber amplifiers at 1.3 mm

NARCIS (Netherlands)

Simons, D.R.; Faber, A.J.; Waal, de H.

1995-01-01

The luminescence of Pr3+-doped GeSx-based glasses were studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-contg. glasses in the telecommunications window at 1.3 mm is discussed. [on SciFinder (R)

Optical Characterization of Doped Thermoplastic and Thermosetting Polymer-Optical-Fibers

Directory of Open Access Journals (Sweden)

Igor Ayesta

2017-03-01

Full Text Available The emission properties of a graded-index thermoplastic polymer optical fiber and a step-index thermosetting one, both doped with rhodamine 6G, have been studied. The work includes a detailed analysis of the amplified spontaneous emission together with a study of the optical gains and losses of the fibers. The photostability of the emission of both types of fibers has also been investigated. Comparisons between the results of both doped polymer optical fibers are presented and discussed.

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

International Nuclear Information System (INIS)

Feng, Ruixing; Kremer, Felipe; Sprouster, David J.; Mirzaei, Sahar; Decoster, Stefan

2016-01-01

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35 Ge 0.65 , by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si 0.35 Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

Structural and optical properties of Er{sup 3+} doped SiO{sub 2}–Al{sub 2}O{sub 3}–GeO{sub 2} compounds prepared by a simple route

Energy Technology Data Exchange (ETDEWEB)

Filho, Fausto M. Faria [Instituto de Física, Universidade Federal de Goiás-UFG, Campus II, Caixa Postal 131, CEP 74001-970 Goiânia, GO (Brazil); Gonçalves, Rogéria R. [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo-USP, Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Ribeiro, Sidney J.L. [Institute of Chemistry, São Paulo State University-UNESP, Rua Professor Francisco Degni, 55, CEP 14801-970 Araraquara, SP (Brazil); Maia, Lauro J.Q., E-mail: lauro@ufg.br [Instituto de Física, Universidade Federal de Goiás-UFG, Campus II, Caixa Postal 131, CEP 74001-970 Goiânia, GO (Brazil)

2015-04-15

Highlights: • We developed a simple route to obtain gels and powders using GeO{sub 2}, TEOS and TMAH solution. • Al{sub 6}Ge{sub 2}O{sub 13} crystalline nanoparticles embedded in amorphous matrix were obtained. • The Al{sub 2}O{sub 3} enhance Er{sup 3+} dispersion in GeO{sub 2}–SiO{sub 2} increasing its emission and the full width at half maximum from 41 to 56 nm. • The {sup 4}I{sub 13/2} Er{sup 3+} level lifetime varies between 4.8 and 5.6 ms (1533 nm emission). - Abstract: Samples of (1 − x)[0.70SiO{sub 2} + 0.30Al{sub 2}O{sub 3}] + xGeO{sub 2} compositions, containing x = 0.05, 0.10, 0.20, 0.30, 0.40 and 0.50, and doped with 1 mol% of Er{sup 3+}, were prepared by a mixed route (sol–gel process and Pechini method). Transparent gels were synthesized and homogeneous powders were obtained by heat treatments from 800 °C to 1050 °C. The final powders were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and high-resolution transmission electron microscopy. The optical properties were studied by photoluminescence measurements in the infrared region, and the average lifetime of the metastable state {sup 4}I{sub 13/2} of Er{sup 3+} ions and the full-width at half maximum (FWHM) were determined. A silica-rich amorphous phase and nanocrystallites with orthorhombic structure of Al{sub 6}Ge{sub 2}O{sub 13} phase were obtained. The samples present a broad emission centered at around 1532 nm under excitation at 977 nm, with a FWHM of 53 nm and a lifetime of 5.6 ms. The synthesized compounds by an easy chemical procedure are potentially applicable in integrated optical systems.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

Science.gov (United States)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

International Nuclear Information System (INIS)

Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

2006-01-01

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

Science.gov (United States)

Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

2017-02-01

In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

Preparation and investigation of Ge-S-I glasses for infrared fiber optics

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Plekhovich, A. D.; Snopatin, G. E.; Churbanov, M. F.; Iskhakova, L. D.; Ermakov, R. P.; Kotereva, T. V.; Shiryaev, V. S.

2016-02-01

Glass samples of [GeSx]90I10 (x = 1.5, 1.7, 2.0, 2.3, 2.45, 2.6) compositions were prepared, and some their thermal, optical properties as well as tendency to crystallization were investigated. The compositional dependences of glass transition temperature, volume fraction of crystallized phase and activation energy of glass formation (Eg) have nonmonotonic character with a maximum for [GeS2.0]90I10 glass. Glasses of 85.8GeS2-14.2GeI4 and [GeS1.5]90I10 compositions are identified as promising for preparation of optical fiber. For the first time, Ge-S-I glass fibers were produced. Minimum optical losses in 85.8GeS2-14.2GeI4 glass fiber were 2.7 dB/m at a wavelength of 5.1 μm, and that in [GeS1.5]90I10 glass fiber were 14.5 dB/m at 5.5 μm.

Optical response of Cu3Ge thin films

OpenAIRE

Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

1996-01-01

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

Electronic structure of antiferromagnetic UN and UPtGe single crystals from optical and magneto-optical spectroscopy

International Nuclear Information System (INIS)

Marutzky, M.

2006-01-01

In this thesis the study of the magneto-optical Kerr effect and the determination of the optical constants by means of ellipsometry and Fourier-transformation infrared spectroscopy of UN and UPtGe is described. In UPtGe an optical anisotropy was detected over a spectral range from 6 meV to 32 eV. (HSI)

Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

Energy Technology Data Exchange (ETDEWEB)

Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2015-01-19

We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

Photoluminescence measurements of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As

International Nuclear Information System (INIS)

Furtado, M.T.; Weid, J.P. von der.

1984-01-01

The photoluminescence of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As, with x=0.30-0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with (h/2π)ω sub(q) approx. 35 + - 2 meV and (h/2π) ω sub(q) approx. 45 + - 2 meV are found for the optical band, yielding a zero phonon transition energy - 1.73 + - 0.02 eV and a Franck-Condon shift approx. 0.17-0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17 + - 0.04 eV. Possible mechanisms for the radiative transitions are discussed. (Author) [pt

Dopant concentration and thermoluminescence (TL) properties of tailor-made Ge-doped SiO2 fibres

International Nuclear Information System (INIS)

Zahaimi, Nurul Arina; Ooi Abdullah, Mohd Haris Ridzuan; Zin, Hafiz; Abdul Rahman, Ahmad Lutfi; Hashim, Suhairul; Saripan, Mohd Iqbal; Paul, Mukul Chandra; Bradley, D.A.; Abdul Rahman, Ahmad Taufek

2014-01-01

Study focuses on characterisation of diverse concentrations of Ge-doped SiO 2 fibre as a potential thermoluminescence (TL) system for radiotherapy dosimetry. Irradiations were made using a linear accelerator providing 6 MV and 10 MV photon beams. Investigation has been done on various doped core diameter Ge-doped SiO 2 glass fibres such as commercial telecommunication fibres of 8 µm and 9 µm (CorActive High Tech, Canada), tailor-made fibres of 23 and 50 µm produced by the Central Glass and Ceramic Research Institute Kolkata, and tailor-made fibres of 11 µm produced by the University of Malaya Photonics Research Centre. The fibres have been characterised for TL sensitivity, reproducibility, dose- and energy-dependence. The area under the TL glow curve increases with increasing core diameter. For repeat irradiations at a fixed dose the dosimeter produces a flat response better than 4% (1SD) of the mean of the TL distribution. Minimal TL signal fading was found, less than 0.5% per day post irradiation. Linearity of TL has been observed with a correlation coefficient (r 2 ) of better than 0.980 (at 95% confidence level). For particular dopant concentrations, the least square fits show the change in TL yield, in counts per second per unit mass, obtained from 50 µm core diameter fibres irradiated at 6 MV of photon to be 8 times greater than that of 8 µm core diameter fibre. With respect to energy response, the TL yield at 10 MV decreases by∼5% compared to that at 6 MV, primarily due to the lower mass energy absorption coefficient at higher photon energy. These early results indicate that selectively screened fibres can be developed into a promising TL system, offering high spatial resolution capability and, with this, verification of complex radiotherapy dose distributions. - Highlights: • We examined the TL glow curve intensity for various diameter sizes of germanium doped silica glass fibre. • TL sensitivity increased with the increase of fibre core

Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect

DEFF Research Database (Denmark)

Ou, Haiyan; Rottwitt, Karsten

2009-01-01

Germanium (Ge) nanocrystals embedded in silica matrix is an interesting material for new optoelectronic devices. In this paper, standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using plasma enhanced chemical vapour deposition and reactive ion etching...

Optical bistability of optical fiber ring doped by Erbium and quantum dots

International Nuclear Information System (INIS)

Safari, S.; Tofighi, S.; Bahrampour, A.; Sajad, B.; Shahshahani, F.

2012-01-01

In this paper, theoretical analysis of the steady state behavior of the optical bistability in an optical fiber ring doped by Erbium and quantum dots is presented. The up and down switching power is calculated and the dependence of the switching power on different fiber ring parameters is investigated. The switching power for this type of optical bistability device is obtained much lower than the fiber ring which its half length is doped by Erbium ion.

First-principles calculation on oxygen ion migration in alkaline-earth doped La2GeO5

International Nuclear Information System (INIS)

Thuy Linh, Tran Phan; Sakaue, Mamoru; Aspera, Susan Meñez; Alaydrus, Musa; Wungu, Triati Dewi Kencana; Hoang Linh, Nguyen; Kasai, Hideaki; Mohri, Takahiro; Ishihara, Tatsumi

2014-01-01

By using first-principles calculations based on the density functional theory, we investigated the doping effects of alkaline-earth metals (Ba, Sr and Ca) in monoclinic lanthanum germanate La 2 GeO 5 on its oxygen ion conduction. Although the lattice parameters of the doped systems changed due to the ionic radii mismatch, the crystal structures remained monoclinic. The contribution of each atomic orbital to electronic densities of states was evaluated from the partial densities of states and partial charge densities. It was confirmed that the materials behaved as ionic crystals comprising of cations of La and dopants and anions of oxygen and covalently formed GeO 4 . The doping effect on the activation barrier for oxygen hopping to the most stable oxygen vacancy site was investigated by the climbing-image nudged elastic band method. By tracing the charge density change during the hopping, it was confirmed that the oxygen motion is governed by covalent interactions. The obtained activation barriers showed excellent quantitative agreements with an experiment for the Ca- and Sr-doped systems in low temperatures as well as the qualitative trend, including the Ba-doped system. (paper)

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

International Nuclear Information System (INIS)

Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

2012-01-01

Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

International Nuclear Information System (INIS)

Yamaguchi, M.; Saito, K.; Ikushima, A.J.

2002-01-01

The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)

Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

2015-03-10

We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

2015-01-01

We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

Spectroscopic properties and energy transfer analysis of Tm3+-doped BaF2-Ga2O3-GeO2-La2O3 glass.

Science.gov (United States)

Yu, Shenglei; Yang, Zhongmin; Xu, Shanhui

2010-05-01

This paper reports on the spectroscopic properties and energy transfer analysis of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)-La(2)O(3) glasses with different Tm(2)O(3) doping concentrations (0.2, 0.5, 2.0, 2.5, 3.0, 3.5, 3.5, 4.0 wt%). Mid-IR fluorescence intensities in the range of 1,300 nm-2,200 nm have been measured when excited under an 808 nm LD for all the samples with the same pump power. Energy level structure and Judd-Ofelt parameters have been calculated based on the absorption spectra of Tm(3+), cross-relaxation rates and multi-phonon relaxation rates have been estimated with different Tm(2)O(3) doping concentrations. The maximum fluorescence intensity at around 1.8 mum has been obtained in Tm(2)O(3)-3 wt% sample and the maximum value of calculated stimulated emission cross-section of Tm(3+) in this sample is about 0.48 x 10(-20) cm(2) at 1,793 nm, and there is not any crystallization peak in the DSC curve of this sample, which indicate the potential utility of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)- La(2)O(3) glass for 2.0-microm optical fiber laser.

Optimal process parameters for phosphorus spin-on-doping of germanium

Energy Technology Data Exchange (ETDEWEB)

Boldrini, Virginia [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Carturan, Sara Maria, E-mail: sara.carturan@lnl.infn.it [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Maggioni, Gianluigi; Napolitani, Enrico [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Napoli, Daniel Ricardo [INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Camattari, Riccardo [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122, Ferrara (Italy); De Salvador, Davide [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy)

2017-01-15

Highlights: • Optimized protocol for the application of phosphorus spin-on-doping to Ge surface. • Homogeneous n-type Ge layers, fully electrically active, are obtained. • Crucial parameters for SOD curing are relative humidity, time and temperature. • Characterization of Ge loss from the surface into the SOD film by diffusion. • Spike annealing in standard tube chamber furnace are performed. - Abstract: The fabrication of homogeneously doped germanium layers characterized by total electrical activation is currently a hot topic in many fields, such as microelectronics, photovoltaics, optics and radiation detectors. Phosphorus spin-on-doping technique has been implemented on Ge wafers, by developing a protocol for the curing process and subsequent diffusion annealing for optimal doping. Parameters such as relative humidity and curing time turned out to affect the surface morphology, the degree of reticulation reached by the dopant source and the amount of dopant available for diffusion. After spike annealing in a conventional furnace, diffusion profiles and electrical properties have been measured. Ge loss from the surface during high-temperature annealing, due to diffusion into the source film, has been observed and quantified.

Wavelength dependence of the Brillouin spectral width of boron doped germanosilicate optical fibers.

Science.gov (United States)

Law, Pi-Cheng; Dragic, Peter D

2010-08-30

Boron co-doped germanosilicate fibers are investigated via the Brillouin light scattering technique using two wavelengths, 1534 nm and 1064 nm. Several fibers are investigated, including four drawn from the same preform but at different draw temperatures. The Stokes' shifts and the Brillouin spectral widths are found to increase with increasing fiber draw temperature. A frequency-squared law has adequately described the wavelength dependence of the Brillouin spectral width of conventional Ge-doped fibers. However, it is found that unlike conventional Ge-doped fibers these fibers do not follow the frequency-squared law. This is explained through a frequency-dependent dynamic viscosity that modifies this law.

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

International Nuclear Information System (INIS)

Chaisakul, Papichaya; Marris-Morini, Delphine; Vakarin, Vladyslav; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

2014-01-01

We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range

First-principles study on the gas sensing property of the Ge, As, and Br doped PtSe2

Science.gov (United States)

Zhang, Jing; Yang, Gui; Tian, Junlong; Ma, Dongwei; Wang, Yuanxu

2018-03-01

Based on first-principles calculations, the adsorption behaviors of H2, O2, CO, CO2, NH3, NO, and NO2 molecules on the Ge-, As- and Br-doped PtSe2 monolayers are theoretically investigated. The results indicate that it is viable for the dopant atoms to be filled into the Se vacancies under Pt-rich conditions. Ge and As act as p-type dopants, while Br acts as n-type dopant. For the adsorption of molecules, the geometrical structures, adsorption energies, charge transfers and the electronic and magnetic properties of the most stable configurations are presented and discussed. It is found that the Ge-doped PtSe2 monolayers exhibit greatly enhanced sensitivity toward O2, CO, NH3, NO and NO2 molecules and the As-doped PtSe2 monolayers are more sensitive toward O2, NH3, NO and NO2 molecules than the pristine ones. This is evident from large adsorption energies, charge transfers, and obvious changes of the electronic states due to the molecule adsorption. However, Br doping cannot enhance the sensing sensitivity of the PtSe2 monolayer. The possible reason is that when substituting for the Se atom, the doped Br with more 4p electrons and less empty orbitals are already chemically saturated by the two of the three neighboring Pt atoms, and thus lose the ability of charge exchange with the adsorbed molecules. On the contrary, the Ge and As as p-type dopants have sizable empty 4p orbitals near the Fermi level to exchange the electrons with the adsorbed molecules, and thus form strong bonds with them.

Germanium-doped gallium phosphide obtained by neutron irradiation

Science.gov (United States)

Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

1993-08-01

Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

Energy Technology Data Exchange (ETDEWEB)

Feng Song; Gao Yong; Yang Yuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Feng Yuchun, E-mail: vonfs@yahoo.com.c [Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060 (China)

2009-08-15

The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)

The relationship between structural and optical properties of Se-Ge-As glasses

Science.gov (United States)

Ghayebloo, M.; Rezvani, M.; Tavoosi, M.

2018-05-01

In this study, the structural and optical characterization of bulk Se-Ge-As glasses has been investigated. In this regards, six different Se60Ge40-xAsx (0 ≤ x ≤ 25) glasses were prepared by conventional melt quenching technique in quartz ampoule. The produced samples were characterized using X-ray diffraction (XRD), Raman spectroscopy, differential thermal analysis (DTA), ultraviolet-visible (UV-Vis) and Fourier transform infrared (FTIR) spectroscopy. The fundamental absorption edge for all the glasses was analyzed in terms of the theory proposed by Davis and Mott. According to achieved results, fully amorphous phase can easily form in different Se-Ge-As systems. The thermal and optical characteristic of Se60Ge40-xAsx glasses shows anomalous behavior at 5 mol% of As for the glass transition temperature, transmittance, absorption edge, optical energy gap and Urbach energy. The highest glass transition temperature, transmittance, optical energy gap and Urbach energy properties were achieved in Se60Ge35As5 glass as a result of the highest connectivity of cations and anions in glass network.

Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Directory of Open Access Journals (Sweden)

Mohd Sabri Mohd Ghazali

2011-09-01

Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

Thermokinetic behaviour of Ag-doped (GeS2)50(Sb2S3)50 glasses.

Czech Academy of Sciences Publication Activity Database

Svoboda, R.; Fraenkl, M.; Frumarová, Božena; Wágner, T.; Málek, J.

2016-01-01

Roč. 449, 1 October (2016), s. 12-19 ISSN 0022-3093 Institutional support: RVO:61389013 Keywords : DSC * Ag doping * Ge-Sb-S glass Subject RIV: CA - Inorganic Chemistry Impact factor: 2.124, year: 2016

Hydrostatic pressure effect on the magnetocaloric behavior of Ga-doped MnNiGe magnetic equiatomic alloy

International Nuclear Information System (INIS)

Dutta, P; Das, D; Chatterjee, S; Pramanick, S; Majumdar, S

2016-01-01

The magnetocaloric properties of a new class of ferromagnetic shape memory alloys of nominal composition MnNiGe 0.928 Ga 0.072 have been investigated in ambient conditions as well as in the presence of external hydrostatic pressure. Both inverse (6.35 Jkg −1 K −1 for 0  −  50 kOe around 160 K) and conventional (−4.54 Jkg −1 K −1 for 0–50 kOe around 210 K) magnetocaloric effects (MCEs) have been observed around the structural and magnetic transitions respectively. The sample can be thought of as being derived from the parent MnNiGe alloy, where Ga was doped at the expense of the Ge atom. Ga doping at Ge sites brings down the martensitic transition temperature to below room temperature and induces ferromagnetism by affecting the lattice volume of the alloy. However, below the first-order martensitic transition the alloy loses its ferromagnetism. Application of external hydrostatic pressure results in a revival of ferromagnetic interactions in the martensitic phase of the alloy and a considerable increase in the refrigeration capacity around the conventional MCE region. (paper)

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

Science.gov (United States)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Optical limiting study of C60 doped (dimethylandicarboxylate) /poly (ethylacetylenecarboxy)polymer

International Nuclear Information System (INIS)

Zidan, M.D.; Allaf, A.W.

2011-10-01

The optical limiting action of poly(dimethylacetylendicarboxylate) polymer and poly(ethylacetylendicarboxylate) polymer doped with fullerene C 6 0 has been investigated under irradiation with 10 ns laser pulse at 532 nm. The optical limiting measurements were performed at different doping concentrations. The threshold limiting fluence decreased at high doping concentrations, at the same time the optical limiting efficiency has been increased. An explanation based on the combination of two-photon absorption and reverse saturable absorption was proposed for its nonlinear optical absorption behavior. (author)

Electronic structure of antiferromagnetic UN and UPtGe single crystals from optical and magneto-optical spectroscopy; Elektronische Struktur von antiferromagnetischen UN- und UPtGe-Einkristallen aus optischer und magnetooptischer Spektroskopie

Energy Technology Data Exchange (ETDEWEB)

Marutzky, M.

2006-10-12

In this thesis the study of the magneto-optical Kerr effect and the determination of the optical constants by means of ellipsometry and Fourier-transformation infrared spectroscopy of UN and UPtGe is described. In UPtGe an optical anisotropy was detected over a spectral range from 6 meV to 32 eV. (HSI)

Optical properties of quantum-dot-doped liquid scintillators

International Nuclear Information System (INIS)

Aberle, C; Winslow, L; Li, J J; Weiss, S

2013-01-01

Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO

Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

Science.gov (United States)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-07-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Optical and structural properties of Cu-doped β-Ga2O3 films

International Nuclear Information System (INIS)

Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

2011-01-01

Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

Theoretical Investigation of Oxazine 170 Perchlorate Doped Polymeric Optical Fiber Amplifier

Directory of Open Access Journals (Sweden)

Piotr Miluski

2017-01-01

Full Text Available Optical signal amplification in the waveguiding structure of optical fibers can be used for optical telecommunication systems and new light sources constructions. Organic dyes doped materials are interesting for new applications in polymeric optical fibers technology due to their benefits (efficient fluorescence, high absorption cross section, and easy processing. This article presents a numerical simulation of gain in poly(methyl methacrylate optical fiber doped by Oxazine 170 Perchlorate. The calculated gain characteristic for the used dye molar concentration (0.2·10-6–1.4·10-6 and pump power (1–10 kW is presented. The fabricated fluorescent polymeric optical fiber is also shown. The presented analysis can be used for optical amplifier construction based on dye-doped polymeric optical fiber (POF.

Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

Science.gov (United States)

Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

2018-05-01

The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

synthesis and optical characterization of acid-doped polyaniline thin

African Journals Online (AJOL)

HOD

SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

High-pressure effect in spectroscopic and structural properties of Sm{sup 3+} doped GeO{sub 2}-PbO glass

Energy Technology Data Exchange (ETDEWEB)

Rovani, Pablo Roberto; Herrera, Alvaro; Azevedo, Gustavo de Medeiros; Balzaretti, Naira Maria, E-mail: rovani.pr@gmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre (Brazil)

2016-07-01

Full text: The effect of densification under high pressure (7.7 GPa) on spectroscopic and structural properties of Ge{sub 2}O-PbO glass doped with Sm{sup 3+} ion were investigated. Raman spectroscopy and Extended X-ray Absorption Fine Structure (EXAFS) were used to investigate the effect of high pressure on the structural properties. The spectroscopic properties were investigated through the absorption and luminescence spectra recorded at room temperature The splitting in the VIS-NIR fluorescence bands increased after densification. Judd-Ofelt (J-O) theory was applied to evaluate phenomenological JO intensity parameters Ω (λ = 2, 4 and 6). The effect of high pressure on the transition probabilities (A{sub R}), radiative lifetimes (t{sub R}), branching ratio (b{sub R}) and stimulated emission cross-section s(l{sub p}) was also investigated. The results obtained from EXAFS indicated changes around the vicinity of Sm{sup 3+} ion which would explain the quenching in emission intensities in the visible range. A novel band related to the transition {sup 4}G{sub 5/2} to {sup 6}F{sub 11/2} was observed in the Sm{sup 3+} doped GeO{sub 2}-PbO. The obtained results may be useful for compact light sources, optical devices in the visible region and optoelectronic devices. (author)

Physical, thermal, infrared and optical properties of Nd3+ doped lithium–lead-germanate glasses

International Nuclear Information System (INIS)

Veeranna Gowda, V.C.

2015-01-01

The structure–property relationships of neodymium doped lithium–lead-germanate glasses were investigated. The density was found to increase with the increase of Nd 2 O 3 concentration and its variation is explained in terms of its molecular mass, structural transformation and packing density. Addition of modifier oxide to lead-germanate glass suggests a decreased free space within the glass matrix, resulting in the formation of stiff network. The increase in glass transition temperature specifies strengthening of glass by forming bridging oxygens. The optical properties of glass were measured employing UV–visible spectroscopy. The refractive index values varied nonlinearly with Nd 2 O 3 concentration and were speculated to depend on the electronic polarizability of oxide glasses. The frequencies of the infrared absorption bands were affected marginally and the absorption peaks revealed that the glass matrix consists of [GeO 4/2 ], [GeO 6/2 ] and [PbO 4/2 ] structural units

The computational study of adsorption of carbon monoxide on pristine and Ge-doped (6,0 zigzag models of BNNTs

Directory of Open Access Journals (Sweden)

Mahdi Rezaei Sameti

2014-07-01

Full Text Available The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0 zigzag model of boron nitride nanotube (BNNTs by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d standard base set and then the electronic structure, adsorption energy, HOMO - LUMO orbitals, gap energy, quantum molecular descriptors, and NQR parameters were determined. The bond lengths neighborhood sites of Ge-doped of BNNTs at all models were increased and the bond angles decreased. The small ad-sorption energy value and large interaction distance show that the adsorption of CO on BNNTs is weakly physical adsorption due to weak Van der Waals interaction. Our calculated results show that the adsorption of CO on the surface of undoped models is more favorable than Ge-doped models. The NQR parameters of the first layer in all the models are larger than those other layers.

Evolution of magnetostructural transition and magnetocaloric effect with Al doping in MnCoGe1-xAlx compounds

KAUST Repository

Bao, Lifu; Hu, Fengxia; Wu, Rongrong; Wang, Jianping; Chen, Liming; Sun, Jirong; Shen, Baogen; Li, Lain-Jong; Zhang, Bei; Zhang, Xixiang

2014-01-01

The effect of Al doping in MnCoGe1-xAlx compounds has been investigated. The substitution of Al for Ge enhances Mn-Mn covalent bonding by shortening the distance of nearest Mn atom layers, and thus stabilizes the hexagonal structure. As a result, first-order magnetostructural transition between ferromagnetic martensite and paramagnetic austenite takes place for the optimized compositions (x = 0.01, 0.02). Accompanied with the magnetostructural transition, large magnetocaloric effect (MCE) is observed. More doping of Al(x = 0.03, 0.04) leads to the separation of magnetic and structural transitions and remarkable reduction of MCE. © 2014 IOP Publishing Ltd.

Evolution of magnetostructural transition and magnetocaloric effect with Al doping in MnCoGe1-xAlx compounds

KAUST Repository

Bao, Lifu

2014-01-03

The effect of Al doping in MnCoGe1-xAlx compounds has been investigated. The substitution of Al for Ge enhances Mn-Mn covalent bonding by shortening the distance of nearest Mn atom layers, and thus stabilizes the hexagonal structure. As a result, first-order magnetostructural transition between ferromagnetic martensite and paramagnetic austenite takes place for the optimized compositions (x = 0.01, 0.02). Accompanied with the magnetostructural transition, large magnetocaloric effect (MCE) is observed. More doping of Al(x = 0.03, 0.04) leads to the separation of magnetic and structural transitions and remarkable reduction of MCE. © 2014 IOP Publishing Ltd.

Optical bistability and multistability in polaritonic materials doped with nanoparticles

International Nuclear Information System (INIS)

Wang, Zhiping; Yu, Benli

2014-01-01

We investigate the optical bistability and multistability in polaritonic materials doped with nanoparticles inside an optical ring cavity. It is found that the optical bistability and multistability can be easily controlled by adjusting the corresponding parameters of the system properly. The effect of the dipole–dipole interaction has also been included in the formulation, which leads to interesting phenomena. Our scheme opens up the possibility of controling the optical bistability and multistability in polaritonic materials doped with nanoparticles. (letter)

Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

International Nuclear Information System (INIS)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-01-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

International Nuclear Information System (INIS)

Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

2015-01-01

The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

International Nuclear Information System (INIS)

Ungan, F.

2011-01-01

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.

Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

International Nuclear Information System (INIS)

Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

2008-01-01

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-11-03

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

Optical properties of Sm3+ -doped TeO2sbnd WO3sbnd GeO2 glasses for solid state lasers

Science.gov (United States)

Subrahmanyam, T.; Gopal, K. Rama; Suvarna, R. Padma; Jamalaiah, B. Chinna; Rao, Ch Srinivasa

2018-03-01

Sm3+ -doped oxyfluoride tellurite-tungsten (TWGSm) glasses were prepared by conventional melt quenching method. The optical properties were investigated through photoluminescence excitation, emission and luminescence decay analysis. The optical band gap energy was determined as ∼3.425 eV for 1.0 mol% of Sm3+ -doped TWGSm glass. Upon 404 nm excitation, the TWGSm glasses emit luminescence through 4G5/2 → 6H5/2 (563 nm), 4G5/2 → 6H7/2 (600 nm), 4G5/2 → 6H9/2 (645 nm) and 4G5/2 → 6H11/2 (705 nm) transitions. The Judd-Ofelt analysis was performed using absorption spectrum and obtained radiative parameters were used to estimate the laser characteristics of present glasses. The concentration of Sm3+ has been optimized as 1.0 mol% for efficient luminescence. The luminescence decay of 4G5/2 emission level was studied by monitoring the emission and excitation wavelengths at 600 and 404 nm, respectively. The experimental lifetime of 4G5/2 level was decrease with increase of Sm3+ concentration. The 1.0 mol% of Sm3+ -doped TWGSm glass could be the best choice for solid state visible lasers to emit orange luminescence.

Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

Temperature monitoring of vehicle engine exhaust gases under vibration condition using optical fibre temperature sensor systems

International Nuclear Information System (INIS)

Zhao, W Z; Suna, T; Grattana, K T V; Shen, Y H; Wei, C L; Al-Shamma'a, A I

2006-01-01

Two optical approaches, comprising and contracting both the fluorescence decay lifetime and the fibre Bragg grating (FBG) methods, were developed and evaluated for temperature monitoring of exhaust gases for use on a vehicle engine. The FBGs used in the system were written into specially designed Bi-Ge co-doped photosensitive fibres, to enable them to sustain high temperatures to over 800 0 C, which is far beyond that of FBGs written into most commercial photosensitive fibres. The sensors were subjected to a range of vibration tests, as a part of an optical exhaust monitoring network under development, and results from the test carried out are reported

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Science.gov (United States)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Sm 3+-doped polymer optical waveguide amplifiers

Science.gov (United States)

Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

2010-04-01

Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

Science.gov (United States)

Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

2018-06-01

Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

2014-08-01

Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGe xC y film deposited by ultraclean LPCVD

International Nuclear Information System (INIS)

Shim, Hyunyoung; Sakuraba, Masao; Murota, Junichi

2006-01-01

The effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline (poly) Si 1-x -y Ge x C y films was investigated. Poly-Si 1-x -y Ge x C y films were deposited on thermally oxidized Si(100) at 500-650 deg. C in a SiH 4 -GeH 4 -SiH 3 CH 3 -H 2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition. B and P were doped into the films by ion implantation and diffusion by heat-treatment. The electrical properties are characterized by grain size, width of disordered region near grain boundaries, carrier trap density and the amount of impurity segregation at grain boundaries. In the B-doped poly-Si 1-x -y Ge x C y films heat-treated at 900 deg. C, the increase of carrier concentration n poly and the decrease of resistivity ρ poly with Ge addition are caused by the narrowing of the width of disordered regions, i.e., crystallization of disordered regions induced by Ge atoms. The decrease of n poly and the increase of ρ poly with C addition are explained by the suppression of crystallization of disordered region due to C atom segregation at grain boundaries. In the P-doped poly-Si 1-x -y Ge x C y films, it is found that n poly and ρ poly are influenced by P atom segregation at grain boundaries due to lowering solid solubility of P in grain by the existence of Ge

Scintillation and optical stimulated luminescence of Ce-doped CaF2

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Watanabe, Kenichi; Fukuda, Kentaro; Kawaguchi, Noriaki; Miyamoto, Yuka; Nanto, Hidehito

2014-01-01

Scintillation and optical stimulated luminescence of Ce 0.1–20% doped CaF 2 crystals prepared by Tokuyama Corp. were investigated. In X-ray induced scintillation spectra, luminescence due to Ce 3+ 5d–4f transition appeared around 320 nm with typically 40 ns decay time. By 241 Am 5.5 MeV α-ray irradiation, 0.1% doped one showed the highest scintillation light yield and the light yield monotonically decreased with Ce concentrations. Optically stimulated luminescence after X-ray irradiation was observed around 320 nm under 550 or 830 nm stimulation in all samples. As a result, intensities of optically stimulated luminescence were proportional to Ce concentrations. Consequently, scintillation and optically stimulated luminescence resulted to have a complementary relation in Ce-doped CaF 2 system. - Highlights: • Optical, scintillation, and OSL properties of Ce 0.1–20% doped CaF 2 were studied. • Scintillation light yield exhibited inverse proportionality to Ce concentrations. • OSL intensities showed proportionality to Ce concentrations. • Complementary relation of scintillation and OSL was experimentally confirmed

Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses for fiber amplifiers at 1.3 {mu}m

Energy Technology Data Exchange (ETDEWEB)

Simons, D.R.; Faber, A.J.; de Waal, H. [Glass Technology, Eindhoven University of Technology, P.O. Box 595, 5600 AN Eindhoven (Netherlands)

1995-03-01

The photoluminescence properties of Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeS{sub {ital x}}-containing glasses in the telecommunications window at 1.3 {mu}m is discussed.

Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

DEFF Research Database (Denmark)

Kilpeläinen, S.; Tuomisto, F.; Slotte, J.

2011-01-01

Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb] = 2 × 1018 and 2 × 1019 cm−3) Si0.8Ge0.2 was studied with positron annihilation spectroscopy in Doppler broadening mode. The study was performed by annealing the samples both isochronally and isothermally. Defect...... evolution was observed at the temperature range 450–650 K. Both treatments were shown to induce changes in the chemical surroundings of the E-centers via introduction of Ge near the defects. Moreover, Sb was found to hinder these changes by stabilizing the E-centers and thus preventing them from finding Ge....... The stable state reached after the anneals was found to differ from that measured from an as-grown sample. This difference was deemed to be the result of Ge gathering in small clusters during the annealing thus breaking the initially random Ge distribution....

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

Science.gov (United States)

Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

2018-01-01

The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

International Nuclear Information System (INIS)

Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

2011-01-01

In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

International Nuclear Information System (INIS)

Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

2013-01-01

Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Optical method for the screening of doping substances

Science.gov (United States)

Lademann, J.; Shevtsova, J.; Patzelt, A.; Richter, H.; Gladkowa, N. D.; Gelikonov, V. M.; Gonchukov, S. A.; Sterry, W.; Blume-Peytavi, U.

2008-12-01

During the last years, an increased misuse of doping substances in sport has been observed. The action of doping substances characterized by the stimulation of blood flow and metabolic processes is also reflected in the hair structure. In the present study it was demonstrated that optical coherent tomography is well suited for the analysis of hair parameters influenced by doping. Analyzing 20 patients, systemically treated with steroids which also represent doping substances, it was found that in all cases a significant increase in the cross-section of the hairs could be detected. The results obtained in the study are not only important for the screening of doping substances but also for medical diagnostics and control of compliance of patients.

Optical method for the screening of doping substances

International Nuclear Information System (INIS)

Lademann, J; Patzelt, A; Richter, H; Sterry, W; Shevtsova, J; Gladkowa, N D; Gelikonov, V M; Gonchukov, S A; Blume-Peytavi, U

2008-01-01

During the last years, an increased misuse of doping substances in sport has been observed. The action of doping substances characterized by the stimulation of blood flow and metabolic processes is also reflected in the hair structure. In the present study it was demonstrated that optical coherent tomography is well suited for the analysis of hair parameters influenced by doping. Analyzing 20 patients, systemically treated with steroids which also represent doping substances, it was found that in all cases a significant increase in the cross-section of the hairs could be detected. The results obtained in the study are not only important for the screening of doping substances but also for medical diagnostics and control of compliance of patients

Crystal structure of a Zn-doped derivative of the Li17Ge4 compound

International Nuclear Information System (INIS)

Lacroix-Orio, L.; Tillard, M.; Belin, C.

2008-01-01

The compound Li 17-ε Zn ε Ge 4 has been obtained as a side product during the preparation of the intermetallic compound Li 8 Zn 2 Ge 3 from the elements. Its structure has been determined from single crystal X-ray diffraction intensities measured at 173 K. It crystallizes in the cubic system, F4-bar3m space group, a = 18.842(1) A, Z = 20. Its crystal structure is slightly different from those so far reported in the literature for the Zn-free phase Li 17 Ge 4 , particularly concerned are the positions and the site occupations of Li atoms. Most likely, these structural variations result from the presence of a small Zn concentration in the compound. The Zn doping atom has been found only at the specific Li 4d site (about 3 at.% Zn)

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Optical Properies of Polystyrene Films Doped by Methyl Green Dye

Directory of Open Access Journals (Sweden)

Asrar A. Saeed

2017-11-01

Full Text Available Effects of methyl green (MG dye on the optical properties of polystyrene (PS have been studied. Pure polystyrene and MG doped PS films were prepared by using casting method. These films were characterized using UV/VIS spectrophotometer technique in order to estimate the type of electric transition which was found to be indirect transition. The value of the optical energy gap was decreased with increasing doping ratios of methyl green dye. Absorption coefficient, extinction coefficient, refractive index and energy gap have been also investigated; it was found that all the above parameters affects by doping dye.

Photoluminescence quenching by OH in Er- and Pr-doped glasses for 1.5 and 1.3 μm optical amplifiers

Science.gov (United States)

Faber, Anne J.; Simons, Dennis R.; Yan, Yingchao; de Waal, Henk

1994-09-01

In this paper we report on the effect of hydroxyl (OH) groups on the photoluminescence in the near IR (1.5 and 1.3 micrometers ) in rare earth (Er, Pr)-doped glasses. The 1.5 micrometers emission of Er-doped phosphate glasses was studied, before and after a special heat treatment. The luminescent lifetime of the 1.5 micrometers emission increases substantially, typically from 3 ms up to 7.2 ms for a 2 mole% Er2O3-doped phosphate glass, due to the controlled heat treatment. The increase in lifetime is ascribed to a decrease in OH- concentration, which is confirmed by IR-absorption spectroscopy. The quenching by OH is described by a simplified quenching model, which predicts the 1.5 micrometers emission lifetime as a function of Er- concentration with the OH-concentration as parameter. It appears that the larger part of the OH groups is coupled to Er ions and thus acts as quenching center. Photoluminescence quenching by OH groups is also reported for the 1.3 micrometers emission of Pr in GeS2-glasses: In pure OH-free GeS2 glass the 1.3 micrometers emission lifetime is as high as 350 microsecond(s) , for a 400 ppm dopant level. In GeS2 glasses containing only small amounts of OH (approximately 100 ppm), this lifetime is less than 200 microsecond(s) . Both examples demonstrate that for the fabrication of efficient glass optical amplifiers at the telecommunication windows 1.3 and 1.5 micrometers , the OH-impurity level of the host glass must be kept as low as possible.

Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

Energy Technology Data Exchange (ETDEWEB)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

2017-07-15

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

High power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

DEFF Research Database (Denmark)

Jain, Deepak; Sidharthan, Raghuraman; Moselund, Peter M.

2017-01-01

We demonstrate a 74 mol % GeO2 doped fiber for mid-infrared supercontinuum generation. Experiments ensure a highest output power for a broadest spectrum from 700nm to 3200nm from this fiber, while being pumped by a broadband 4 stage Erbium fiber based MOPA. The effect of repetition rate of pump...

Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

2012-07-15

Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

Robust indirect band gap and anisotropy of optical absorption in B-doped phosphorene.

Science.gov (United States)

Wu, Zhi-Feng; Gao, Peng-Fei; Guo, Lei; Kang, Jun; Fang, Dang-Qi; Zhang, Yang; Xia, Ming-Gang; Zhang, Sheng-Li; Wen, Yu-Hua

2017-12-06

A traditional doping technique plays an important role in the band structure engineering of two-dimensional nanostructures. Since electron interaction is changed by doping, the optical and electrochemical properties could also be significantly tuned. In this study, density functional theory calculations have been employed to explore the structural stability, and electronic and optical properties of B-doped phosphorene. The results show that all B-doped phosphorenes are stable with a relatively low binding energy. Of particular interest is that these B-doped systems exhibit an indirect band gap, which is distinct from the direct one of pure phosphorene. Despite the different concentrations and configurations of B dopants, such indirect band gaps are robust. The screened hybrid density functional HSE06 predicts that the band gap of B-doped phosphorene is slightly smaller than that of pure phosphorene. Spatial charge distributions at the valence band maximum (VBM) and the conduction band minimum (CBM) are analyzed to understand the features of an indirect band gap. By comparison with pure phosphorene, B-doped phosphorenes exhibit strong anisotropy and intensity of optical absorption. Moreover, B dopants could enhance the stability of Li adsorption on phosphorene with less sacrifice of the Li diffusion rate. Our results suggest that B-doping is an effective way of tuning the band gap, enhancing the intensity of optical absorption and improving the performances of Li adsorption, which could promote potential applications in novel optical devices and lithium-ion batteries.

Photo-induced optical activity in phase-change memory materials.

Science.gov (United States)

Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

2015-03-05

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

International Nuclear Information System (INIS)

Myronov, M.

2001-04-01

This thesis is a report on experimental investigations of magnetotransport, structural and optical properties of p-type modulation doped (MOD) heterostructures with Si 1-x Ge x channel of high Ge content (0.6 1-y Ge y /Si(001) virtual substrate (VS). The active layers of MOD heterostructures were grown by solid source molecular beam epitaxy (SS-MBE). The VSs were grown either by SS-MBE or low-pressure chemical vapour deposition (LP-CVD). The influence of thermal annealing on magnetotransport, structural and optical properties of Si 1-x Ge x /Si 1-y Ge y heterostructures was studied by performing the post growth furnace thermal annealing (FTA) treatments in the temperature range of 600-900C for 30min and rapid thermal annealing (RTA) treatments at temperature 750C for 30sec. Structural and optical analysis of p-type MOD Si 1-x Ge x /Si 1-y Ge y heterostructures involved the techniques of cross-sectional transmission electron microscopy, ultra low energy secondary ion mass spectrometry, photoluminescence spectroscopy, micro-Raman spectroscopy and scanning white-light interferometry. From the combinations of experimental results obtained by these techniques the Ge composition in the SiGe heteroepilayers, their thicknesses, state of strain in the heteroepilayers and dislocations microstructure in VSs were obtained. After post growth thermal annealing treatments were observed broadening of the Si 1-x Ge x channel accompanied with the reduction of Ge content in the channel and smearing of Si 1-x Ge x /Si 1-y Ge y interfaces. The Si 0.7 Ge 0.3 on low-temperature Si buffer VSs with very good structural properties were designed and grown by SS-MBE. These include: relatively thin 850nm total thickness of VS, 4-6nm Peak-to-Valley values of surface roughness, less than 10 5 cm -2 threading dislocations density and more than 95% degree of relaxation in the top layers of VS. The Hall mobility and sheet carrier density of as-grown and annealed p-type MOD Si 1-x Ge x /Si 1-y Ge y

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Science.gov (United States)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

2016-01-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

International Nuclear Information System (INIS)

Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

2014-01-01

We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

Optical properties of individual site-controlled Ge quantum dots

Energy Technology Data Exchange (ETDEWEB)

Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

2015-06-22

We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

Optical and structural characterization of Ge clusters embedded in ZrO2

Science.gov (United States)

Agocs, E.; Zolnai, Z.; Rossall, A. K.; van den Berg, J. A.; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.

2017-11-01

The change of optical and structural properties of Ge nanoclusters in ZrO2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO2 and Ge-rich-ZrO2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO2 layers alternated by 5-nm-ZrO2 ones. Germanium nanoclusters in ZrO2 host were formed by rapid-thermal annealing at 600-800 °C during 30 s in nitrogen atmosphere. Reference optical properties for pure ZrO2 and pure Ge have been extracted using single-layer samples. As-deposited multi-layer structures can be perfectly modeled using the effective medium theory. However, annealed multi-layers demonstrated a significant diffusion of elements that was confirmed by medium energy ion scattering measurements. This fact prevents fitting of such annealed structure either by homogeneous or by periodic multi-layer models.

Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

Energy Technology Data Exchange (ETDEWEB)

Huang, Yu-Jen; Tsai, Min-Chuan; Wang, Chiung-Hsin; Hsieh, Tsung-Eong, E-mail: tehsieh@mail.nctu.edu.tw

2012-02-29

Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 Degree-Sign C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. - Highlights: Black-Right-Pointing-Pointer Ce doping increased phase-change temperature of GST from 159 to 236 Degree-Sign C. Black-Right-Pointing-Pointer No suppression of resistivity level in amorphous Ce-doped GST. Black-Right-Pointing-Pointer Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 10{sup 5}. Black-Right-Pointing-Pointer p-type semiconducting behavior of GST was enhanced by Ce-doping. Black-Right-Pointing-Pointer Ce-doping improved the thermal stability of threshold voltage of GST PCM device.

Tm-Yb Doped Optical Fiber Performance with Variation of Host-Glass Composition

Directory of Open Access Journals (Sweden)

Anirban Dhar

2014-01-01

Full Text Available The fabrication process of Thulium-Ytterbium doped optical fiber comprising different host glass through the Modified Chemical Vapor Deposition (MCVD coupled with solution doping technique is presented. The material and optical performance of different fibers are compared with special emphasis on their lasing efficiency for 2 µm application.

Two-color mid-infrared spectroscopy of optically doped semiconductors

International Nuclear Information System (INIS)

Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

2003-01-01

Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Directory of Open Access Journals (Sweden)

Song Feng

2018-01-01

Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

Morphological and optical studies of zinc oxide doped MgO

Energy Technology Data Exchange (ETDEWEB)

Othman, Zayani Jaafar, E-mail: jaafar.zayani@yahoo.fr; Matoussi, Adel

2016-06-25

This paper reports morphological and optical characterizations of sintered (ZnO){sub 1−x}(MgO){sub x} composite materials. The effects of MgO doping content on these pellets properties have been analyzed. The SEM observations have shown rougher surfaces of the samples covered by grains having prismatic shapes and different sizes. From reflectance and absorption measurements, we have determined the band gap energy which tends to augment from 3.287 to 3.827 eV as the doping content increases. This widening of the optical band gap is explained by the Burstein-Moss effect which causes a significant increase of electron concentration (2.89 10{sup 18}−5.1910{sup 20} cm{sup −3}). In addition, the absorption coefficient, Urbach energy, optical constants (refractive index, extinction coefficient, dielectric constant) and dispersion parameters, such as E{sub 0} (single-oscillator energy), E{sub d} (dispersive energy) were determined of the (ZnO){sub 1−x}(MgO){sub x} composites and analyzed. - Highlights: • (ZnO){sub 1−x}(MgO){sub x} composites were synthesized by solid state sintering method. • MgO doping increased the band gap energy. • SEM observations have shown a decrease of grain sizes when the MgO doping increases. • Optical constants and dispersion parameters were determined and analyzed.

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

Energy Technology Data Exchange (ETDEWEB)

Grant, C D; Zhang, J Z

2007-09-28

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Optical and structural characterization of Ge clusters embedded in ZrO2

OpenAIRE

Agocs, E; Zolnai, Z.; Rossall, A. K.; Van den Berg, Jakob; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.

2017-01-01

The change of optical and structural properties of Ge nanoclusters in ZrO2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO2 and Ge-rich-ZrO2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO2 layers alternated by 5-nm-ZrO2 ones. Germanium nanoclusters in ZrO2 host were formed by rapid-therm...

The effect of Sm-doping on optical properties of LaB6 nanoparticles

International Nuclear Information System (INIS)

Chao, Luomeng; Bao, Lihong; Shi, Junjie; Wei, Wei; Tegus, O.; Zhang, Zhidong

2015-01-01

Highlights: • Nanoparticles of Sm-doped LaB 6 have been prepared by solid state reaction. • All samples exhibit high absorbance in NIR range and UV range. • The increase of Sm-doping amount shifts the position of minimum absorptance value. • The optical properties of Sm-doped LaB 6 were interpreted by DFT theory. - Abstract: Nanocrystalline particles of LaB 6 , SmB 6 and Sm-doped LaB 6 have been prepared by a solid-state reaction in order to investigate the optical properties of ternary rare-earth hexaborides. The sizes of prepared nanoparticles range from dozens to more than 200 nm, as confirmed by XRD, SEM and TEM examinations. The optical property concerning the absorption spectra was tested with ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectrum. All samples exhibit high absorbance in NIR range and UV range. The increase of Sm-doping amount shifts the position of minimum absorptance value of LaB 6 to the long-wave direction. Density functional theory (DFT) is employed to interpret the optical properties of Sm-doped LaB 6 , and results indicate that Sm 4f states change the DOS at near Fermi surface of LaB 6 after Sm doping and the reduced number of conduction electrons results into the change of absorption spectra

Long afterglow properties of Eu2+/Mn2+ doped Zn2GeO4

International Nuclear Information System (INIS)

Wan, Minhua; Wang, Yinhai; Wang, Xiansheng; Zhao, Hui; Li, Hailing; Wang, Cheng

2014-01-01

Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized via a high temperature solid state reaction. X-ray diffraction (XRD), afterglow spectra, decay curves and thermoluminescence curves were utilized to characterize the samples. The X-ray diffraction phases indicate that the doping of small amount of transition metal ions or rare earth ions has no significant influence on the crystal structure of Zn 2 GeO 4 . According to the afterglow spectra, we found that the Zn 2 GeO 4 :Eu 2+ 0.01 exhibits a broad band emission with a peak at 474 nm, which could be ascribed to Eu 2+ transition between 4f 6 5d 1 and 4f 7 electron configurations. The Zn 2 GeO 4 :Mn 2+ 0.01 shows a narrow band emission peaking at 532 nm corresponding to the characteristic transition of Mn 2+ ( 4 T 1 → 6 A 1 ). The thermoluminescence (TL) curves above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence. The results indicate that Zn 2 GeO 4 may be an excellent host material for the rare earth ions or transition metal ions long afterglows. -- Highlights: • Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized. • Found that these phosphors possess a persistent luminescence property. • The long afterglow spectra were measured. • Found that these phosphors possess a trap level by thermoluminescence

Structural and optical properties of Na-doped ZnO films

Science.gov (United States)

Akcan, D.; Gungor, A.; Arda, L.

2018-06-01

Zn1-xNaxO (x = 0.0-0.05) solutions have been synthesized by the sol-gel technique using Zinc acetate dihydrate and Sodium acetate which were dissolved into solvent and chelating agent. Na-doped ZnO nanoparticles were obtained from solutions to find phase and crystal structure. Na-doped ZnO films have been deposited onto glass substrate by using sol-gel dip coating system. The effects of dopant concentration on the structure, morphology, and optical properties of Na-doped ZnO thin films deposited on glass substrate are investigated. Characterization of Zn1-xNaxO nanoparticles and thin films are examined using differential thermal analysis (DTA)/thermogravimetric analysis (TGA), Scanning electron microscope (SEM) and X-Ray diffractometer (XRD). Optical properties of Zn1-xNaxO thin films were obtained by using PG Instruments UV-Vis-NIR spectrophotometer in 190-1100 nm range. The structure, morphology, and optical properties of thin films are presented.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

Science.gov (United States)

Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

2016-01-01

In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH− absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10−21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system. PMID:27506152

Optical characterization of Tm(3+) doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2.

Science.gov (United States)

Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

2016-08-10

In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd-Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm(3+) ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH(-) absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10(-21) cm(2)) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm(3+): (4)F3 → (3)H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation ((3)H6 + (3)H4 → (3)F4 + (3)F4) rate. Our results suggest that the Tm(3+) doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

Properties of thin optical Ge films related to their technology dependent structure

Energy Technology Data Exchange (ETDEWEB)

Schirmer, G; Duparre, A; Heerdegen, W; Kuehn, H J; Lehmann, A; Richter, W; Schroeter, B [Dept. of Physics, Friedrich-Schiller Univ., Jena (Germany, F.R.); Hacker, E; Meyer, J [Jenaoptik GmbH Carl Zeiss, Jena (Germany, F.R.)

1991-03-16

Sputtered and evaporated optical Ge films are investigated using electron microscopy and diffraction, total integrated scattering, infrared reflection absorption spectroscopy. Auger electron spectroscopy, and optical transmission measurements to observe differences of the chemical composition, atomic structure, morphology, optical constants, and degradation in relation to the parameters of technology during preparation. (orig.).

Mn-doped Ge self-assembled quantum dots via dewetting of thin films

Energy Technology Data Exchange (ETDEWEB)

Aouassa, Mansour, E-mail: mansour.aouassa@yahoo.fr [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Jadli, Imen [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Bandyopadhyay, Anup [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Kim, Sung Kyu [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of); Karaman, Ibrahim [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Lee, Jeong Yong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of)

2017-03-01

Highlights: • We report the new fabrication approach for producing a self- assembled Mn dpoed Ge quantum dots (QDs) on SiO{sub 2} thin film with a Curie temperature above room temperature. These magnetic QDs are crystalline, monodisperse and have a well-defined shape and a controlled size. The investigation opens new routes for elaboration of self-assembled magnetic nanocrystals - Abstract: In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO{sub 2} thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO{sub 2} thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

Evaluation of material dispersion using a nanosecond optical pulse radiator.

Science.gov (United States)

Horiguchi, M; Ohmori, Y; Miya, T

1979-07-01

To study the material dispersion effects on graded-index fibers, a method for measuring the material dispersion in optical glass fibers has been developed. Nanosecond pulses in the 0.5-1.7-microm region are generated by a nanosecond optical pulse radiator and grating monochromator. These pulses are injected into a GeO(2)-P(2)0(5)-doped silica graded-index fiber. Relative time delay changes between different wavelengths are used to determine material dispersion, core glass refractive index, material group index, and optimum profile parameter of the graded-index fiber. From the measured data, the optimum profile parameter on the GeO(2)-P(2)O(5)-doped silica graded-index fiber could be estimated to be 1.88 at 1.27 microm of the material dispersion free wavelength region and 1.82 at 1.55 microm of the lowest-loss wavelength region in silica-based optical fiber waveguides.

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

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Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

International Nuclear Information System (INIS)

Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

2010-01-01

Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

Optical and structural properties of individual Co-doped ZnO microwires

Science.gov (United States)

Kolomys, O. F.; Strelchuk, V. V.; Rarata, S. V.; Hayn, R.; Savoyant, A.; Giovannelli, F.; Delorme, F.; Tkach, V.

2018-06-01

The Co-doped ZnO microwires (MWs) were grown using the optical furnace method. We used Scanning electron microscopy (SEM), polarized micro-Raman spectroscopy, photoluminescence (PL) and optical absorption spectroscopy to systematic investigation of the optical and structural properties of Co-doped ZnO MWs. The SEM analysis reveals that Co-doped ZnO MWs has hexagonal facets and cavity inside. The EDS results confirmed the presence and non-uniform distribution of Co impurities in the samples. Co doping of ZnO MWs leads to the decreased intensity, drastically broadening and high-energy shift of the NBE PL band. The red emission band at 1.85 eV originates from 2E(2G) → 4A2 (4F) intra-3d-transition of Co2+ in the ZnO lattice has been observed. The intense structured absorption bands within the near infrared ranges 3800-4800 and 5500-9000 cm-1 are caused by electronic spin-allowed transitions 4T2(F) ← 4A2(F) and 4T1(F) ← 4A2(F) of the tetrahedrally coordinated Co2+ (3 d7) ions substituting Zn2+ ions in Co-doped ZnO MWs. Micro-Raman studies of Co doped ZnO MWs show doping/disorder induced additional modes as compared to the undoped sample. The resonant enhancement of the additional local Co-related A1-symmetry Raman mode is observed in the parallel polarization geometry y(z , z) ybar . For the Co doped ZnO MWs, the enhancement of the additional Co-related local vibration mode with an increase in the excitation photon energy is also observed in the Raman spectra.

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

Science.gov (United States)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

International Nuclear Information System (INIS)

Kheyri, A.; Nourbakhsh, Z.; Darabi, E.

2016-01-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

Energy Technology Data Exchange (ETDEWEB)

Kheyri, A. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Nourbakhsh, Z., E-mail: z.nourbakhsh@sci.ui.ac.ir [Physics Department, Faculty of Science, University of Isfahan, Isfahan (Iran, Islamic Republic of); Darabi, E. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2016-08-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

Directory of Open Access Journals (Sweden)

Mursal Mursal

2014-07-01

Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

Nonlinear Optical Properties of Aluminum Doped Zinc Oxide

Science.gov (United States)

Otieno, Calford O.

Nonlinear optical (NLO) materials are crucial to future progress in industrial and technological applications that involve intense light-matter interaction. While ZnO-related materials are known to possess good NLO properties, existing results on ZnO and AZO (Al-doped ZnO) are mostly available at a single wavelength or limited ranges. Therefore, NLO dispersions (wavelength dependences) are not entirely studied, especially at longer wavelengths far below the bandgap. It is important to explore wavelength dependences since doping can induce a drastic change in the NLO responses at varied spectral ranges via doping-induced subgap-state contributions. We present results of our studies on nonlinear harmonic generation from our samples, which include 1) second harmonic generation and 2) third harmonic generation precisely characterized by Maker fringes as a function of both Al doping and wavelength. We exhaustively discuss the possible cause for the modified optical nonlinearities observed in our AZO thin films and give detailed comparisons of our observations with the previous studies. We also present the results of open- and close-aperture Z-scans to characterize the two-photon absorption coefficient (TPA) and the nonlinear refractive index (NLR), respectively, of the AZO films. There was no clearcut evidence of monotonic dependence of TPA and NLR on doping. This presumably indicates that the overall effect is nontrivial and should be understood in terms of combined effects of bandgap shift and crystallinity upon varying the doping level. Most intriguingly, we found that NLR values from the closed-aperture Z-scan are very large by orders of magnitude when compared with the bulk counterparts. Similar observation was made for TPA values from the open-aperture Z-scan. To countercheck very large NLO absorption, we conducted simple intensity scan by varying the incident photon number on each sample but fixing the beam area to eliminate any possible errors related to optical

Electronic structure and optical properties of Al and Mg co-doped GaN

International Nuclear Information System (INIS)

Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

2013-01-01

The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

Thermal, structural and optical properties of new TeO2sbnd Sb2O3sbnd GeO2 ternary glasses

Science.gov (United States)

Pereira, C.; Barbosa, J.; Cassanjes, F. C.; Gonçalves, R. R.; Ribeiro, S. J. L.; Poirier, G.

2016-12-01

In this work the novel glass system TeO2sbnd Sb2O3sbnd GeO2 was investigated and promising glass compositions were selected for further specific studies. Glass samples in the (80-0.8x)TeO2-(20-0.2x)Sb2O3-xGeO2 molar composition were prepared by the melt-quenching method with a glass-forming domain from x = 10 to x = 90. Samples were investigated by XRD, DSC, FTIR, Raman spectroscopy and UV-visible absorption. The XRD and DSC results bring informations about the non-crystalline state and thermal properties of these materials. It has been observed that higher GeO2 contents lead to higher glass transition temperatures and thermal stabilities against crystallization. FTIR and Raman spectroscopies suggest a progressive incorporation of GeO2 in the covalent network of TeO2 with conversion of structural units TeO4 to TeO3. Absorption spectra revealed the high visible transparency of these samples and an increase of the optical band gap with GeO2 addition, in agreement with a decreasing polarizability of the glass network. Er3+ doped and Er3+/Yb3+ codoped samples were also studied with respect to their infrared emission properties and higher GeO2 contents lead to an increase in IR emission intensity at 1,5 μm as well as longer radiative lifetimes. Finally, upconversion emission in the visible were also recorded and were shown to be strongly dependent of the composition.

Third-order nonlinear optical properties of GeSe2-Ga2Se3-PbI2 glasses

International Nuclear Information System (INIS)

Tang Gao; Liu Cunming; Luo Lan; Chen Wei

2010-01-01

The third-order nonlinear optical (NLO) properties of new selenium-based GeSe 2 -Ga 2 Se 3 -PbI 2 glasses have been measured using the optical Kerr effect (OKE) technique, with picosecond and femtosecond laser pulses. The 0.70GeSe 2 -0.15Ga 2 Se 3 -0.15PbI 2 glass has the largest third-order optical nonlinear susceptibility in GeSe 2 -Ga 2 Se 3 -PbI 2 glass system with χ (3) of 5.28x10 12 esu. In addition, the response time of glasses is sub-picosecond, which is predominantly associated with electron cloud. Local structure of the glasses has been identified by using Raman studies, while the origins of the observed nonlinear optical response are discussed. The [Ge(Ga)Se 4 ] tetrahedral and lone-pair electrons from highly polarizable Pb atom in glasses play an important role in enhanced NLO response. These results as well as their good chemical stability indicate that GeSe 2 -Ga 2 Se 3 -PbI 2 glasses are promising materials for photonic applications of third-order nonlinear optical signal processing.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Directory of Open Access Journals (Sweden)

Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

Optical modelling of photoluminescence emitted by thin doped films

International Nuclear Information System (INIS)

Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

2011-01-01

Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

Energy Technology Data Exchange (ETDEWEB)

Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

2015-05-05

Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

Influence of La Doping on Magnetic and Optical Properties of Bismuth Ferrite Nanofibers

Directory of Open Access Journals (Sweden)

Ziang Zhang

2012-01-01

Full Text Available The influence of La doping on the crystal structure, ferromagnetic, and optical properties of BFO nanofibers was investigated. Bi1−xLaxFeO3 ultrafine nanofibers were synthesized by the electrospinning method. The surface morphology and crystal structure of the as-spun and sintered fibers were not affected by the doping. The impurity phases of the BFO crystals were weakened with the increment of La concentration. The magnetization field curves showed that the magnetization weakened under low La doping proportion, but strengthened with the increase of the doped proportion. The magnetization curves also showed continuous strong enhancement of ferromagnetic behavior. The results of UV-vis and photoabsorption testing revealed little influence of La doping on the optical property.

Multimode laser emission from dye-doped hollow polymer optical fibre

Indian Academy of Sciences (India)

2014-02-09

Feb 9, 2014 ... Dye-doped polymer optical fibre preforms were fabricated by the controlled polymeriza- tion of Rh B-doped methyl methacrylate (MMA). Hole in the preform can be achieved by placing a teflon rod on the centre of the glass tube during the polymerization. Final fibre structure with required diameter was ...

Erbium Doped Fiber Optic Gravimeter

International Nuclear Information System (INIS)

Pérez-Sánchez, G G; Pérez-Torres, J R; Flores-Bravo, J A; Álvarez-Chávez, J A; Martínez-Piñón, F

2017-01-01

Gravimeters are devices that can be used in a wide range of applications, such as mining, seismology, geodesy, archeology, geophysics and many others. These devices have great sensibility, which makes them susceptible to external vibrations like electromagnetic waves. There are several technologies regarding gravimeters that are of use in industrial metrology. Optical fiber is immune to electromagnetic interference, and together with long period gratings can form high sensibility sensors of small size, offering advantages over other systems with different technologies. This paper shows the development of an optical fiber gravimeter doped with Erbium that was characterized optically for loads going from 1 to 10 kg in a bandwidth between 1590nm to 1960nm, displaying a weight linear response against power. Later on this paper, the experimental results show that the previous described behavior can be modeled as characteristic function of the sensor. (paper)

Doping Lanthanide into Perovskite Nanocrystals: Highly Improved and Expanded Optical Properties.

Science.gov (United States)

Pan, Gencai; Bai, Xue; Yang, Dongwen; Chen, Xu; Jing, Pengtao; Qu, Songnan; Zhang, Lijun; Zhou, Donglei; Zhu, Jinyang; Xu, Wen; Dong, Biao; Song, Hongwei

2017-12-13

Cesium lead halide (CsPbX 3 ) perovskite nanocrystals (NCs) have demonstrated extremely excellent optical properties and great application potentials in various optoelectronic devices. However, because of the anion exchange, it is difficult to achieve white-light and multicolor emission for practical applications. Herein, we present the successful doping of various lanthanide ions (Ce 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Er 3+ , and Yb 3+ ) into the lattices of CsPbCl 3 perovskite NCs through a modified hot-injection method. For the lanthanide ions doped perovskite NCs, high photoluminescence quantum yield (QY) and stable and widely tunable multicolor emissions spanning from visible to near-infrared (NIR) regions are successfully obtained. This work indicates that the doped perovskite NCs will inherit most of the unique optical properties of lanthanide ions and deliver them to the perovskite NC host, thus endowing the family of perovskite materials with excellent optical, electric, or magnetic properties.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

Science.gov (United States)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

International Nuclear Information System (INIS)

Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

2012-01-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

International Nuclear Information System (INIS)

Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

2015-01-01

GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

A density functional theory investigation on amantadine drug interaction with pristine and B, Al, Si, Ga, Ge doped C60 fullerenes

Science.gov (United States)

Parlak, Cemal; Alver, Özgür

2017-06-01

Amantadine is a well-known drug for its treatment effect on Parkinson's disease and influenza infection or hepatitis. Heteroatom doped fullerenes have been extensively examined for their possible usage in sensor technology and medical applications as drug delivery vehicles. In this research, pristine and B, Al, Si, Ga, Ge doped C60 fullerenes and their interaction with amantadine drug molecule were investigated based on the density functional theory calculations. Findings suggest that doped C60 fullerenes might be used to detect the presence of amantadine and they might be used as drug delivery vehicles because of their moderately high adsorption energies with amantadine.

Optically stimulated luminescence properties of Tm3+ doped KMgF3 fluoro perovskite

International Nuclear Information System (INIS)

Camargo, L.; Marcazzo, J.; Perez C, L.; Cruz Zaragoza, E.; Martinez O, S. A.

2017-10-01

In this work the optically stimulated luminescence (OSL) properties of undoped and Tm 3+ doped KMgF 3 fluoro perovskite have been investigated for the first time. OSL efficiency for stimulation with different wavelengths has been analyzed for each compound. The maximum OSL emission was found with blue light stimulation. The radioluminescence (Rl) spectra have shown two emission peaks at 455 and 360 nm, which can be ascribed to the 1 D 2 - 3 F 4 and 1 D 2 - 3 H 6 transitions of the Tm 3+ cations. It has been found that doping with Thulium 0.5 mol % renders the most intense OSL emission. Furthermore, several dosimetric properties such as OSL response as a function of dose, reproducibility of the OSL signal after several cycles of irradiation readout and the minimum detectable dose have been investigated. Finally, the OSL response of KMgF 3 : Tm 3+ has been compared to that of commercial Al 2 O 3 :C and the possible application of this fluoro perovskite to OSL dosimetry has been evaluated. (Author)

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

Science.gov (United States)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Optical studies on Eu3+ doped boro-tellurite glasses

Science.gov (United States)

Maheshvaran, K.; Marimuthu, K.

2012-06-01

Eu3+ doped boro-tellurite glasses with the chemical composition (39-x)B2O3+30TeO2+15MgO+15K2O +xEu2O3 (where x = 0.01, 0.1, 1, 2 and 3 wt%) have been prepared by following conventional melt quenching technique. Spectroscopic properties of the Eu3+ doped boro-tellurite glasses have been studied by recording the optical absorption and luminescence measurements. Through the optical absorption spectra, bonding parameters (β¯, δ) have been calculated to identify the ionic/covalent nature of the glasses. Judd-Ofelt (JO) analysis have been carried out using the luminescence spectra. The JO parameters (Ωλ = 2, 4 and 6) were used to calculate the radiative properties for the 5D0 → 7FJ (J = 1, 2, 3 and 4) emission transitions of the Eu3+ ions. The change in optical properties with the variation of Eu3+ ion concentration have been studied and discussed with similar studies.

Nucleon-nucleon optical model for energies to 3 GeV

International Nuclear Information System (INIS)

Funk, A.; Von Geramb, H.V.; University of Melbourne, VIC; Amos, K.A.

2001-01-01

Several nucleon-nucleon potentials, Paris, Nijmegen, Argonne, and those derived by quantum inversion, which describe the NN interaction for T Lab ≤ 300 MeV are extended in their range of application as NN optical models. Extensions are made in r-space using complex separable potentials definable with a wide range of form factor options including those of boundary condition models. We use the latest phase shift analyses SP00 (FA00, WI00) of Arndt et al. from 300 MeV to 3 GeV to determine these extensions. The imaginary parts of the optical model interactions account for loss of flux into direct or resonant production processes. The optical potential approach is of particular value as it permits one to visualize fusion, and subsequent fission, of nucleons when T Lab > 2 GeV. We do so by calculating the scattering wave functions to specify the energy and radial dependences of flux losses and of probability distributions. Furthermore, half-off the energy shell t-matrices are presented as they are readily deduced with this approach. Such t-matrices are required for studies of few- and many-body nuclear reactions

Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites.

Science.gov (United States)

Zhao, Wenjun; Sun, Ying; Liu, Yufei; Shi, Kewen; Lu, Huiqing; Song, Ping; Wang, Lei; Han, Huimin; Yuan, Xiuliang; Wang, Cong

2018-01-01

Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of -285.23 × 10 -6 K -1 (192-305 K) and -1167.09 × 10 -6 K -1 (246-305 K) have been obtained in Mn 0.90 Fe 0.10 NiGe and MnNi 0.90 Fe 0.10 Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn 0.92 Fe 0.08 NiGe/ x %Cu, the CTE gradually changes from -64.92 × 10 -6 K -1 (125-274 K) to -4.73 × 10 -6 K -1 (173-229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

C and Si delta doping in Ge by CH{sub 3}SiH{sub 3} using reduced pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Yuji, E-mail: yamamoto@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ueno, Naofumi; Sakuraba, Masao [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 980-8577 (Japan); Murota, Junichi [Micro System Integration Center, Tohoku University, 519-1176, Aramaki aza Aoba, Aoba-ku, Sendai 980-0845 (Japan); Mai, Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

2016-03-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH{sub 3}SiH{sub 3} is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H{sub 2} or N{sub 2} carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N{sub 2} as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH{sub 3}SiH{sub 3} is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H{sub 2} as carrier gas, lower incorporated C is observed in comparison to Si. CH{sub 3}SiH{sub 3} injected with H{sub 2} carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N{sub 2} at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH{sub 3}SiH{sub 3} exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH{sub 3}SiH{sub 3} adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

Doping effect on the optical properties of ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Stoehr, M. [Frederick Seitz Materials Research Laboratory, University of Illinois,104 South Goodwin Avenue, Urbana, IL 61801 (United States); Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Juillaguet, S. [Groupe d' Etude des Semi-conducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Kyaw, T.M.; Wen, J.G. [Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France)

2007-04-15

High quality undoped and Ga{sub 2}O{sub 3} or In{sub 2}O{sub 3} doped ZnO nanostructures are grown by chemical vapor transport and condensation. The doping effect on the optical properties is investigated by photoluminescence. At room temperature, photoluminescence on Ga{sub 2}O{sub 3} doped ZnO nanostructures reveals an enhancement of the ultraviolet near band edge emission at 390 nm, while the intensity of the deep level emission at 530 nm weakens. At 5 K, an intense neutral-donor-bound exciton (D{sup 0}X) line dominates the undoped and doped ZnO photoluminescence spectra. The presence of well resolved two-electron satellite lines allow to determine the type of donors. At 5 K, the results indicate that ZnO nanostructures grown with 10% of Ga{sub 2}O{sub 3} display an excellent optical quality, proved by an intense D{sup 0}X line, a high intensity ratio between the D{sup 0}X line and the deep level emission as well as the presence of numerous phonon replicas of the main lines. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

First-principles study on the electronic, optical, and transport properties of monolayer α - and β -GeSe

Science.gov (United States)

Xu, Yuanfeng; Zhang, Hao; Shao, Hezhu; Ni, Gang; Li, Jing; Lu, Hongliang; Zhang, Rongjun; Peng, Bo; Zhu, Yongyuan; Zhu, Heyuan; Soukoulis, Costas M.

2017-12-01

The extraordinary properties and the novel applications of black phosphorene induce the research interest in the monolayer group-IV monochalcogenides. Here using first-principles calculations, we systematically investigate the electronic, transport, and optical properties of monolayer α - and β -GeSe, revealing a direct band gap of 1.61 eV for monolayer α -GeSe and an indirect band gap of 2.47 eV for monolayer β -GeSe. For monolayer β -GeSe, the electronic/hole transport is anisotropic, with an extremely high electron mobility of 2.93 ×104cm2/Vs along the armchair direction, comparable to that of black phosphorene. Furthermore, for β -GeSe, robust band gaps nearly independent of the applied tensile strain along the armchair direction are observed. Both monolayer α - and β -GeSe exhibit anisotropic optical absorption in the visible spectrum.

Photoluminescence and nonlinear optical phenomena in plasmonic random media—A review of recent works

International Nuclear Information System (INIS)

Araújo, Cid B. de; Kassab, Luciana R.P.; Tolentino Dominguez, C.; Ribeiro, Sidney J.L.; Gomes, Anderson S.L.; Reyna, Albert S.

2016-01-01

Photoluminescence properties and nonlinear optical response of metal–dielectric nanocomposites (MDNCs)—germanate glasses, bio-cellulose membranes and colloids containing either silver (Ag) or gold (Au) nanoparticles (NPs)—are reviewed. The phenomena discussed are: i. the photoluminescence enhancement observed from rare-earth doped PbO–GeO 2 glass containing Ag NPs; ii. optical amplification at 1530 nm in RIB waveguides made with PbO–GeO 2 thin films covered with Au NPs; iii. Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs; iv. the nonlinearity management of high-order processes in colloids containing Ag NPs suspended in acetone. In all discussed cases the influence of the metallic NPs is clearly demonstrated and a procedure to control the nonlinear propagation of light beams in heterogeneous media is presented. - Highlights: • Large photoluminescence enhancement observed from rare-earth doped PbO–GeO 2 glass containing Ag NPs. • Optical amplification at 1530 nm in RIB waveguides made with PbO–GeO 2 thin films covered with Au NPs. • Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs. • The nonlinearity management of high-order processes in liquid colloids containing Ag NPs.

Photoluminescence and nonlinear optical phenomena in plasmonic random media—A review of recent works

Energy Technology Data Exchange (ETDEWEB)

Araújo, Cid B. de, E-mail: cid@df.ufpe.br [Departamento de Física , Universidade Federal de Pernambuco, 50670-901 Recife , PE (Brazil); Kassab, Luciana R.P. [Faculdade de Tecnologia de São Paulo (FATEC-SP , CEETEPS), 01124-060 São Paulo , SP (Brazil); Tolentino Dominguez, C. [Laboratório de Óptica Biomédica e Imagem , Universidade Federal de Pernambuco , Recife 50740-530, PE (Brazil); Ribeiro, Sidney J.L. [Institute of Chemistry , São Paulo State University (UNESP), 14801-970 Araraquara , SP (Brazil); Gomes, Anderson S.L.; Reyna, Albert S. [Departamento de Física , Universidade Federal de Pernambuco, 50670-901 Recife , PE (Brazil)

2016-01-15

Photoluminescence properties and nonlinear optical response of metal–dielectric nanocomposites (MDNCs)—germanate glasses, bio-cellulose membranes and colloids containing either silver (Ag) or gold (Au) nanoparticles (NPs)—are reviewed. The phenomena discussed are: i. the photoluminescence enhancement observed from rare-earth doped PbO–GeO{sub 2} glass containing Ag NPs; ii. optical amplification at 1530 nm in RIB waveguides made with PbO–GeO{sub 2} thin films covered with Au NPs; iii. Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs; iv. the nonlinearity management of high-order processes in colloids containing Ag NPs suspended in acetone. In all discussed cases the influence of the metallic NPs is clearly demonstrated and a procedure to control the nonlinear propagation of light beams in heterogeneous media is presented. - Highlights: • Large photoluminescence enhancement observed from rare-earth doped PbO–GeO{sub 2} glass containing Ag NPs. • Optical amplification at 1530 nm in RIB waveguides made with PbO–GeO{sub 2} thin films covered with Au NPs. • Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs. • The nonlinearity management of high-order processes in liquid colloids containing Ag NPs.

Volume-change-free GeTeN films for high-performance phase-change memory

International Nuclear Information System (INIS)

Yin, You; Hosaka, Sumio; Zhang, Hui; Liu, Yang; Yu, Qi

2013-01-01

N-doping into GeTe is investigated with the aim of reducing the volume change upon crystallization, which usually induces a huge internal stress in phase-change memory devices. It is demonstrated that the thickness change upon crystallization of a N-doped GeTe (GeTeN) film is almost zero when N is doped in an appropriate amount. Cracks resulting from the stress caused by volume change disappear and the mean crystal size decreases by more than 50% upon N-doping into GeTe. It is thought that the volume-change-free behaviour is due to the formation of low-density nitride and grain refinement. (paper)

Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

DEFF Research Database (Denmark)

Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

2008-01-01

This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

Co-doping as a tool for tuning the optical properties of singlewalled carbon nanotubes: A first principles study

Science.gov (United States)

Sharma, Deepa; Jaggi, Neena

2017-07-01

This paper presents a first principles study on the effect of co-doping on various optical spectra of a zigzag single-walled carbon nanotube (SWCNT). Optical spectra of a pristine SWCNT, SWCNT co-doped with Aluminum (Al) & Phosphorus (P) and another one co-doped with Al, P and Nitrogen (N) have been calculated using density functional theory (DFT).The theory has been implemented using the Cambridge sequential total energy package (CASTEP) code available as a userfriendly module with the software 'Material Studio'. Polarized and unpolarized light as well as light through polycrystalline media have been considered. The dependence of various spectra on the status of incident light presents a clear evidence of anisotropicity in the optical properties. Analysis of the simulated spectra involves calculation and comparison of different optical properties like dielectric function, reflectivity, refractive index, conductivity and loss function for the pristine and co-doped SWCNTs. Noticeable variations are observed in the optical properties on simultaneously doping the SWCNT with Al and P and then further introducing N atom into the structure so that it can be concluded that co-doping (simultaneous doping with different combinations of dopants) can be evolved as a novel and effective tool for tailoring the optical properties of SWCNTs as per the requirements while designing an optical device. It will prove to be highly significant for effective designing of SWCNT based sensitive optical devices for a variety of technological applications.

Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

2014-01-01

Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

Synthesis and characterization of erbium-doped SiO2-TiO2 thin films prepared by sol-gel and dip-coating techniques onto commercial glass substrates as a route for obtaining active GRadient-INdex materials

International Nuclear Information System (INIS)

Gómez-Varela, Ana I.; Castro, Yolanda; Durán, Alicia; De Beule, Pieter A.A.; Flores-Arias, María T.; Bao-Varela, Carmen

2015-01-01

In this work, SiO 2 -TiO 2 films doped with erbium were prepared by dip-coating sol-gel process onto commercial glass substrates. The surface morphology of the films was characterized using atomic force microscopy, while thickness, refractive index, extinction coefficient and porosity of the films were determined by ellipsometric measurements in a wavelength region of 400-1000 nm. Optical constants and porosity were found to vary with erbium concentration. The proof of principle presented in this paper is applicable to systems of different nature by tailoring the sol-gel precursors in such a way that active GRadient-INdex media described by a complex, parabolic-like refractive index distribution for beam shaping purposes is obtained. - Highlights: • Sol-gel route for preparation of active GRadient-INdex materials is proposed. • SiO 2 -TiO 2 films doped with erbium were prepared by dipping onto commercial glasses. • Morphological and optical characterization of the samples was performed. • Optical constants and porosity were found to vary with erbium concentration. • Refractive index diminishes with dopant content; the contrary occurs for porosity

Specific features of band structure and optical anisotropy of Cu{sub 2}CdGeSe{sub 4} quaternary compounds

Energy Technology Data Exchange (ETDEWEB)

Brik, M.G., E-mail: brik@fi.tartu.ee [College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Parasyuk, O.V. [Department of Chemistry, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Myronchuk, G.L. [Department of Physics, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Kityk, I.V. [Institute of Materials Science and Engineering, Technical University of Czestochowa, Al. Armii Krajowej 19, 42-200 Czestochowa (Poland)

2014-09-15

Complex theoretical and experimental studies of the band structure and optical functions of a new Cu{sub 2}CdGeSe{sub 4} quaternary crystal are reported. The benchmark band structure calculations were performed using the first-principles methods. As a result, the structural, electronic, optical and elastic properties of Cu{sub 2}CdGeSe{sub 4} were calculated in the general gradient approximation (GGA) and local density approximation (LDA). The calculated dielectric function and optical absorption spectra exhibit some anisotropic behavior. Detailed analysis of the band energy dispersion and effective space charge density helped in establishing the origin of the band structure anisotropy. All calculated properties are compared with the experimental data. An additional comparison with a similar crystal of Cu{sub 2}CdGeSe{sub 4} allowed to reveal the role played by the anions (S or Se) in formation of the optical properties of these two materials. - Highlights: • The structural, electronic, optical properties of Cu{sub 2}CdGeSe{sub 4} were calculated. • Pressure effects on these properties were modeled. • Comparison with a similar compound of Cu{sub 2}CdGeS{sub 4} was performed.

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

Magnetic and optical properties of manganese doped ZnO nanoparticles synthesized by sol-gel technique

KAUST Repository

Omri, Karim; El Ghoul, Jaber; Lemine, O. M.; Bououdina, M.; Zhang, Bei; El Mir, Lassaad

2013-01-01

Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.

Magnetic and optical properties of manganese doped ZnO nanoparticles synthesized by sol-gel technique

KAUST Repository

Omri, Karim

2013-08-01

Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.

Ge-Au eutectic bonding of Ge (100) single crystals

International Nuclear Information System (INIS)

Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

1993-01-01

The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

Coating of hydroxyapatite doped Ag on commercially pure titanium surface

International Nuclear Information System (INIS)

Vieira, Jonas de Oliveira; Vercik, Luci Cristina de Oliveira; Rigo, Eliana Cristina da Silva

2012-01-01

This paper presents results of bioactive coating on commercially pure titanium surface (CpTi) doped with Ag ions. The coating consists of 3 steps, in step 1- surface chemical treatment of the samples with NaOH, step 2 - immersing the substrate in question in a sodium silicate solution (SS) to the nucleation and step 3 - reimmersion these substrates in synthetic solution that simulates the blood serum for precipitation and growth of apatite layer. After the coating step the AgNO 3 substrates were immersed in solutions with concentrations of 20 ppm and 100 ppm at 37 ° C for 48h. The substrates were characterized by scanning electron microscopy (SEM), infrared spectroscopy (IR) and X-ray diffraction (XRD). By the results verified the formation of an apatite layer with aspects of cells, on the surface of CpTi. The increase in Ag concentration causes an increase in Ag amount doped in apatite layer. With the results we concluded that it is possible to obtain an apatite layer on a metal surface as the CpTi doped with Ag ions

Controlling Lateral Fano Interference Optical Force with Au-Ge2Sb2Te5 Hybrid Nanostructure

DEFF Research Database (Denmark)

Cao, Tun; Bao, Jiaxin; Mao, Libang

2016-01-01

is revealed through optical singularity in the Poynting vector. A thermal-electric simulation is adopted to investigate the temporal change of the Ge2Sb2Te5 film's temperature, which demonstrates the possibility of transiting the Ge2Sb2Te5 state by electrical heating. Our mechanism by tailoring the DQ...... in flexible nanomechanical control and may provide a new means of biomedical sensing and nano -optical conveyor belts....

Structural and optical properties of Si-doped Ag clusters

KAUST Repository

Mokkath, Junais Habeeb

2014-03-06

The structural and optical properties of AgN and Ag N-1Si1 (neutral, cationic, and anionic) clusters (N = 5 to 12) are systematically investigated using the density functional based tight binding method and time-dependent density functional theory, providing insight into recent experiments. The gap between the highest occupied and lowest unoccupied molecular orbitals and therefore the optical spectrum vary significantly under Si doping, which enables flexible tuning of the chemical and optical properties of Ag clusters. © 2014 American Chemical Society.

Structural and optical properties of Si-doped Ag clusters

KAUST Repository

Mokkath, Junais Habeeb; Schwingenschlö gl, Udo

2014-01-01

The structural and optical properties of AgN and Ag N-1Si1 (neutral, cationic, and anionic) clusters (N = 5 to 12) are systematically investigated using the density functional based tight binding method and time-dependent density functional theory, providing insight into recent experiments. The gap between the highest occupied and lowest unoccupied molecular orbitals and therefore the optical spectrum vary significantly under Si doping, which enables flexible tuning of the chemical and optical properties of Ag clusters. © 2014 American Chemical Society.

Radiation hardening commercial off-the-shelf erbium doped fibers by optimal photo-annealing source

Science.gov (United States)

Peng, Tz-Shiuan; Liu, Ren-Young; Lin, Yen-Chih; Mao, Ming-Hua; Wang, Lon A.

2017-09-01

Erbium doped fibers (EDFs) based devices are widely employed in space for optical communication [1], remote sensing [2], and navigation applications, e.g. interferometric fiber optic gyroscope (IFOG). However, the EDF suffers severely radiation induced attenuation (RIA) in radiation environments, e.g. space applications and nuclear reactors [3].

Physical, optical and structural studies of copper-doped lead ...

Indian Academy of Sciences (India)

2018-05-23

May 23, 2018 ... Physical, optical and structural studies of copper-doped lead oxychloro ... to the borate glass system increases the Raman scattering cross-section by ..... equations (6) and (7), molar refraction and electronic polariz- ability are ...

Structural and optical properties of pure and copper doped zinc oxide nanoparticles

Science.gov (United States)

Sajjad, Muhammad; Ullah, Inam; Khan, M. I.; Khan, Jamshid; Khan, M. Yaqoob; Qureshi, Muhammad Tauseef

2018-06-01

Pure and copper-doped zinc oxide nanoparticles (NPs) have been synthesized via chemical co-precipitation method where hydrazine is used as reducing agent and aqueous extract of Euphorbia milii plant as capping agent. Main objectives of the reported work are to investigate the effect of copper doping on crystal structure of ZnO nanoparticles; to study the effect of copper doping on optical band gap of ZnO nanoparticles and photoluminescence (PL) study of pure and copper-doped ZnO nanoparticles. To achieve the aforementioned objectives, XRD and SEM tests were performed for the identification and confirmation of crystal structure and morphology of the prepared samples. From XRD data the average grain size for pure ZnO was observed to be 24.62 nm which was first decreased to 18.95 nm for 5 wt% Cu-doped sample and then it was found to increase up to 37.80 nm as the Cu doping was increased to 7 wt%. Optical band gap of pure and Cu-doped ZnO nanoparticles was calculated from diffuse reflectance spectroscopy (DRS) spectra and was found to decrease from 3.13 eV to 2.94 eV as the amount of Cu increases up to 7 wt%. In photoluminescence study, PL technique was used and enhanced visible spectrum was observed. For further characterization FT-IR and EDX tests were also carried out.

Optical properties and thermal stability of germanium oxide (GeO2) nanocrystals with α-quartz structure

International Nuclear Information System (INIS)

Ramana, C.V.; Carbajal-Franco, G.; Vemuri, R.S.; Troitskaia, I.B.; Gromilov, S.A.; Atuchin, V.V.

2010-01-01

Germanium dioxide (GeO 2 ) crystals were prepared by a chemical precipitation method at a relatively low-temperature (100 o C). The grown crystals were characterized by studying their microstructure, optical properties and thermal stability. The results indicate that the grown GeO 2 crystals exhibit α-quartz type crystal structure. The lattice parameters obtained from XRD were a = 4.987(4) A and c = 5.652(5) A. Electron microscopy analysis indicates a high structural quality of GeO 2 crystals grown using the present approach. Optical absorption measurements indicate a direct bandgap of 5.72 eV without any additional bands arising from localized or defect states. Thermogravimetric measurements indicate the temperature stability of the grown GeO 2 nanocrystals. Microscopic analysis coupled with energy dispersive X-ray spectroscopy of the GeO 2 crystals with α-quartz type crystal structure indicates their stability in chemical composition up to a temperature of 400 deg. C. The surface morphology of GeO 2 crystals, however, found to be changing with the increase in temperature.

Experimental demonstration of the switching dose-rate method on doped optical fibers

Science.gov (United States)

Thomas, J.; Myara, M.; Troussellier, L.; Régnier, E.; Burov, E.; Gilard, O.; Sottom, M.; Signoret, P.

2017-11-01

Optical technology developed for ground and submarine telecommunications is becoming of strong interest for next generation satellites. In addition to inter-satellite laser communications and LIDAR's, new applications are being considered such as on-board distribution and processing of microwave signals, fiber sensors or gyroscopes as well. Whereas common optical / optoelectronic components are known to be weakly sensitive to radiations, the essential optical amplifiers are strongly degraded in such an environment because of the RIA (Radio-Induced-Absorption) experienced by the Erbium-Doped Fiber (EDF) itself [1-3]. This degradation is mainly caused by the presence of co-doping ions, such as Aluminium or Germanium, inserted in the fibre to assist the inclusion of the Erbium ions in the silica matrix or to provide to the optical fibre its guiding properties.

The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

Science.gov (United States)

Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

2018-04-01

The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

Nonlinear optical studies in semiconductor-doped glasses under ...

Indian Academy of Sciences (India)

Abstract. Nonlinear optical studies in semiconductor-doped glasses (SDGs) are per- formed under femtosecond laser pulse excitation. Z-scan experiments with 800 nm wave- length pulses are used to excite SDG samples in the resonance and non-resonance regimes. Schott colour glass filter OG 515 shows stronger ...

Synthesis of phthalocyanine doped sol-gel materials

Science.gov (United States)

Dunn, Bruce

1993-01-01

The synthesis of sol-gel silica materials doped with three different types of metallophthalocyanines has been studied. Homogeneous materials of good optical quality were prepared and the first optical limiting measurements of dyes in sol-gel hosts were carried out. The properties of these solid state limiters are similar to limiters based on phthalocyanine (Pc) in solution. Sol-gel silica materials containing copper, tin and germanium phthalocyanines were investigated. The initial step in all cases was to prepare silica sols by the sonogel method using tetramethoxy silane (TMOS), HCl and distilled water. Thereafter, the synthesis depended upon the specific Pc and its solubility characteristics. Copper phthalocyanine tetrasulfonic acid tetra sodium salt (CuPc4S) is soluble in water and various doping levels (1 x 10 (exp -4) M to 1 x 10 (exp -5) M) were added to the sol. The group IV Pc's, SnPc(OSi(n-hexyl)3)2 and GePc(OSi(n-hexyl)3)2, are insoluble in water and the process was changed accordingly. In these cases, the compounds were dissolved in THF and then added to the sol. The Pc concentration in the sol was 2 x 10(exp -5)M. The samples were then aged and dried in the standard method of making xerogel monoliths. Comparative nanosecond optical limiting experiments were performed on silica xerogels that were doped with the different metallophthalocyanines. The ratio of the net excited state absorption cross section (sigma(sub e)) to the ground state cross section (sigma(sub g)) is an important figure of merit that is used to characterize these materials. By this standard the SnPc sample exhibits the best limiting for the Pc doped sol-gel materials. Its cross section ratio of 19 compares favorably with the value of 22 that was measured in toluene. The GePc materials appear to not be as useful as those containing SnPc. The GePc doped solids exhibit a higher onset energy (2.5 mj and lower cross section ratio, 7. The CuPc4S sol-gel material has a still lower cross

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Stephania Herodotou

2015-10-01

Full Text Available Transparent conducting oxides (TCOs, with high optical transparency (≥85% and low electrical resistivity (10−4 Ω·cm are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm, increased carrier density (3.81 × 1020 cm−3, and increased optical gap (3.5 eV with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3, low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%.

Optical intersatellite links - Application to commercial satellite communications

Science.gov (United States)

Paul, D.; Faris, F.; Garlow, R.; Inukai, T.; Pontano, B.; Razdan, R.; Ganz, Aura; Caudill, L.

1992-01-01

Application of optical intersatellite links for commercial satellite communications services is addressed in this paper. The feasibility of commercialization centers around basic issues such as the need and derived benefits, implementation complexity and overall cost. In this paper, commercialization of optical ISLs is assessed in terms of the services provided, systems requirements and feasibility of appropriate technology. Both long- and short-range ISLs for GEO-GEO, GEO-LEO and LEO applications are considered. Impact of systems requirements on the payload design and use of advanced technology in reducing its mass, power, and volume requirements are discussed.

Structural and compositional evolution of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} film under different annealing conditions

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki-Hong; Kyoung, Yong-Koo; Yun, Dong-Jin [AS group, CAS center, SAIT, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of); Choi, Sang-Jun, E-mail: sangjun5545.choi@samsung.com [Device Architecture Lab, Semiconductor R and D center, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of)

2013-12-02

Changes in the microstructural and electrical properties of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} during thermal annealing under N{sub 2} and air atmospheres are investigated. The occurrence of compositional and structural changes was found to depend on the annealing conditions, and in particular, on the out-diffusion of germanium atoms. The thick oxidation layer generated during air annealing prevented germanium out-diffusion, leading to structural changes but no compositional changes. In contrast, germanium out-diffusion occurred during annealing under N{sub 2}, leading to compositional changes but preventing structural changes. - Highlights: • We investigate the stability of 10% carbon-doped Ge2Sb2Te5 alloys. • The compositional and structural changes depend on the annealing conditions. • Germanium out-diffusion occurs during N2 annealing, leading to compositional changes. • The oxidation layer generated during air annealing prevents germanium out-diffusion.

Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites

Directory of Open Access Journals (Sweden)

Wenjun Zhao

2018-02-01

Full Text Available Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE behaviors with the coefficients of thermal expansion (CTE of −285.23 × 10−6 K−1 (192–305 K and −1167.09 × 10−6 K−1 (246–305 K have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K to −4.73 × 10−6 K−1 (173–229 K with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM state into ferromagnetic (FM state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Regeneration of irradiated optical fibres by photo-bleaching?

International Nuclear Information System (INIS)

Henschel, H.; Koehn, O.

1999-01-01

It is known that a light power between 0,1 and 20 μW caused bleaching of colour centres, which implies a reduction of induced loss. Older fibres especially those with a core made of undoped, low OH silica, experience tremendous photo-bleaching. Light of shorter wavelengths has a higher bleaching efficiency than that of longer wavelengths and same light intensity. The investigations have demonstrated that the injection of photo-bleaching light of shorter wavelength and higher intensity can distinctly decrease the radiation-induced loss of Ge-doped fibres, especially at low temperatures. Another possibility to apply photo-bleaching by short wavelength is to regenerate fibres that are permanently installed in radiation environments. Modern undoped multi-mode (MM) step index (Si), Ge-doped MM graded index (Gi) and Ge-doped single-mode (SM) fibres that had been irradiated were submitted to bleaching light. In this article it is shown how loss reduction and necessary bleaching time depend on wavelength and intensity of the bleaching light, on fibre length (bleaching time) and on radiation dose. These results are promising for the regeneration of optical fibres in facilities where the fibres cannot be replaced easily by new ones. (A.C.)

Structural characterization and compositional dependence of the optical properties of Ge-Ga-La-S chalcohalide glass system

Science.gov (United States)

Li, Lini; Jiao, Qing; Lin, Changgui; Dai, Shixun; Nie, Qiuhua

2018-04-01

In this paper, chalcogenide glasses of 80GeS2sbnd (20sbnd x)Ga2S3sbnd xLa2S3 (x = 0, 1, 3, 5 mol%) were synthesized through the traditional melt-quenching technique. The effects of La2S3 addition on the thermal, optical, and structural properties of Gesbnd Gasbnd S glasses were investigated. Results showed that the synthesized glasses possessed considerably high glass transition temperature, improved glass forming ability, high refractive index, and excellent infrared transmittance. A redshift at the visible absorbing cut-off edge lower than 500 nm was observed with increasing of La2S3 content. Direct and indirect optical band gap values were calculated. SEM result suggested that this glass system owned better glass forming ability and uniformity. Raman spectral analysis indicated that the introduction of La2S3 induced the dissociation of Gesbnd Ge metal bonds and transformed the [S3Gesbnd GeS3] structure to GeS4 tetrahedrons. Consequently, the connectivity between tetrahedrons of the vitreous network was enhanced. This work suggests that La2S3 modified Ge-Gasbnd Lasbnd S glass is a promising material for infrared optical research.

Optical and thermal investigation of GeO2–PbO thin films doped with Au and Ag nanoparticles

International Nuclear Information System (INIS)

Carvalho, E.A.; Carmo, A.P.; Bell, M.J.V.; Anjos, V.; Kassab, L.R.P.; Silva, D.M. da

2012-01-01

The present work reports on the thermo-optical study of germanate thin films doped with Au and Ag nanoparticles. Transmission Electron Microscopy images, UV–visible absorption and Micro-Raman scattering evidenced the presence of nanoparticles and the formation of collective excitations, the so called surface plasmons. Moreover, the effects of the metallic nanoparticles in the thermal properties of the films were observed. The thermal lens technique was proposed to evaluate the Thermal Diffusivity (D) of the samples. It furnishes superficial spatial resolution of about 100 μm, so it is appropriate to study inhomogeneous samples. It is shown that D may change up to a factor 3 over the surface of a film because of the differences in the nanoparticles concentration distribution.

All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

Science.gov (United States)

Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

2013-05-20

This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

Optical properties of thermally reduced bismuth-doped sodium aluminosilicate glasses

DEFF Research Database (Denmark)

Nielsen, K.H.; Smedskjær, Morten Mattrup; Yue, Yuanzheng

Heat-treatment of multivalent ion containing glasses in a hydrogen atmosphere may cause both reduction of the multivalent ions and ionic inward diffusion, resulting in improved glass properties. Bismuth-doped glasses are also interesting objects not only concerning the reduction induced diffusion...... pressure of hydrogen. Here, we present results on the effect of the heat-treatment on the optical properties of bismuth-doped sodium aluminosilicate glasses.......Heat-treatment of multivalent ion containing glasses in a hydrogen atmosphere may cause both reduction of the multivalent ions and ionic inward diffusion, resulting in improved glass properties. Bismuth-doped glasses are also interesting objects not only concerning the reduction induced diffusion...

Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

Science.gov (United States)

Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

2018-04-01

Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

Homogenous smooth sol gel films doped with organic compounds for nonlinear optics

Energy Technology Data Exchange (ETDEWEB)

Vasiliu, I.C. [INOE 2000 — National Institute for Optoelectronics, 409 Atomistilor Str., Magurele, Bucharest, RO 077125 (Romania); Ionita, I., E-mail: i_ionita@yahoo.com [UB — University of Bucharest, 405 Atomistilor Str., Magurele, Bucharest, RO 077125 (Romania); Matei, A. [INFLPR — National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, Bucharest, RO 077125 (Romania); Elisa, M.; Iordanescu, R.; Feraru, I.; Emandi, A. [INOE 2000 — National Institute for Optoelectronics, 409 Atomistilor Str., Magurele, Bucharest, RO 077125 (Romania)

2016-02-29

The demand for protection of various types of optical sensors from laser-beam pulses has resulted in the search for optical limiting devices that have the property of being transparent at low intensity of light (normal light), but no transparent towards high intensity (laser) light. Organic material with nonlinear optical (NLO) properties as reverse saturable absorption and two-photon absorption can be used for optical limiting with the advantage of a very fast response and self-activation. A promising approach in the fabrication of thin films by low cost/easy use deposition methods for second-order nonlinear optics is sol–gel technique. The present paper reports on the sol–gel synthesis of some pyrazolone derivative doped SiO{sub 2}–P{sub 2}O{sub 5} smooth and homogenous films (Root mean square roughness (Rq) = 1.1 nm) using as precursors tetraethylorthosilicate (TEOS) and phosphoric acid (H{sub 3}PO{sub 4}). The structure of the deposited azo-derivatives doped thin films was examined by Fourier transform infrared spectroscopy and atomic force microscopy, while their optical properties of the films by UV–VIS spectroscopy. The nonlinear optical efficiencies due to the interaction of the NLO-active chromophores with the inorganic matrix have a significant influence on the second harmonic generation capabilities that was measured using a femtosecond Ti:Sapphire laser. The properties of the films were investigated and correlated with the concentration of the organic dopant and the thermal treatment temperature. - Highlights: • We obtained pyrazolone derivative doped SiO{sub 2}–P{sub 2}O{sub 5} smooth and homogenous films. • The pyrazolone derivative presents SHG characteristics by itself. • Thin sol gel films doped with organic compounds with NLO properties. • Temperature of thermal treatment and aging time can improve NLO properties of films. • We found that 150 °C and 28 h aging time give the maximum performance in SHG response.

Dynamic population gratings in rare-earth-doped optical fibres

Energy Technology Data Exchange (ETDEWEB)

Stepanov, Serguei [Optics Department, CICESE, km.107 carr. Tijuana-Ensenada, Ensenada, 22860, BC (Mexico)], E-mail: steps@cicese.mx

2008-11-21

Dynamic Bragg gratings can be recorded in rare-earth (e.g. Er, Yb) doped optical fibres by two counter-propagating mutually coherent laser waves via local saturation of the fibre optical absorption or gain (in optically pumped fibres). Typical recording cw light power needed for efficient grating formation is of sub-mW-mW scale which results in characteristic recording/erasure times of 10-0.1 ms. This review paper discusses fundamental aspects of the population grating formation, their basic properties, relating wave-mixing processes and also considers different applications of these dynamic gratings in single-frequency fibre lasers, tunable filters, optical fibre sensors and adaptive interferometry.

Dynamic population gratings in rare-earth-doped optical fibres

International Nuclear Information System (INIS)

Stepanov, Serguei

2008-01-01

Dynamic Bragg gratings can be recorded in rare-earth (e.g. Er, Yb) doped optical fibres by two counter-propagating mutually coherent laser waves via local saturation of the fibre optical absorption or gain (in optically pumped fibres). Typical recording cw light power needed for efficient grating formation is of sub-mW-mW scale which results in characteristic recording/erasure times of 10-0.1 ms. This review paper discusses fundamental aspects of the population grating formation, their basic properties, relating wave-mixing processes and also considers different applications of these dynamic gratings in single-frequency fibre lasers, tunable filters, optical fibre sensors and adaptive interferometry.

Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

Energy Technology Data Exchange (ETDEWEB)

Ibrahim, Suriani, E-mail: sue_83@um.edu.my [Advanced Materials Research Laboratory, Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ahmad, Roslina; Johan, Mohd Rafie [Advanced Materials Research Laboratory, Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2012-01-15

Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF{sub 6}), ethylene carbonate (EC) and amorphous carbon nanotube ({alpha}CNTs) were prepared by the solution cast technique. The conductivity increases from 10{sup -10} to 10{sup -5} Scm{sup -1} upon the addition of salt. The incorporation of EC and {alpha}CNTs to the salted polymer enhances the conductivity significantly to 10{sup -4} and 10{sup -3} Scm{sup -1}. The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200-400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. - Highlights: > Optical band gap values show the decreasing trend with an increasing dopant concentration. > It is also observed that the absorption edge shifted to longer wavelength on doping. > Results of the optical measurements indicate the presence of a well-defined {pi}{yields}{pi}* transition associated with the formation of a conjugated C=O and/or C=O electronic structure.

Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

International Nuclear Information System (INIS)

Ibrahim, Suriani; Ahmad, Roslina; Johan, Mohd Rafie

2012-01-01

Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF 6 ), ethylene carbonate (EC) and amorphous carbon nanotube (αCNTs) were prepared by the solution cast technique. The conductivity increases from 10 -10 to 10 -5 Scm -1 upon the addition of salt. The incorporation of EC and αCNTs to the salted polymer enhances the conductivity significantly to 10 -4 and 10 -3 Scm -1 . The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200-400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. - Highlights: → Optical band gap values show the decreasing trend with an increasing dopant concentration. → It is also observed that the absorption edge shifted to longer wavelength on doping. → Results of the optical measurements indicate the presence of a well-defined π→π* transition associated with the formation of a conjugated C=O and/or C=O electronic structure.

First principles study of magneto-optical properties of Fe-doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Shaoqiang, Guo [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Qingyu, Hou, E-mail: by0501119@126.com [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Zhenchao, Xu [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); Chunwang, Zhao [College of Science, Inner Mongolia University of Technology, Hohhot 010051 (China); College of Arts and Sciences, Shanghai Maritime University, Shanghai 201306 (China)

2016-12-15

Studies on optical band gaps and absorption spectra of Fe-doped ZnO have conflicting conclusions, such as contradictory redshifted and blueshifted spectra. To solve this contradiction, we constructed models of un-doped and Fe-doped ZnO using first-principles theory and optimized the geometry of the three models. Electronic structures and absorption spectra were also calculated using the GGA+U method. Higher doping content of Fe resulted in larger volume of doped system, and higher total energy resulted in lower stability. Higher formation energy also led to more difficult doping. Meanwhile, the band gaps broadened and the absorption spectra exhibited an evident blue shift. The calculations were in good agreement with the experimental results. Given the unipolar structure of ZnO, four possible magnetic coupling configurations for Zn{sub 14}Fe{sub 2}O{sub 16} were calculated to investigate the magnetic properties. Results suggest that Fe doping can improve ferromagnetism in the ZnO system and that ferromagnetic stabilization was mediated by p–d exchange interaction between Fe-3d and O-2p orbitals. Therefore, the doped system is expected to obtain high stability and high Curie temperature of diluted magnetic semiconductor material, which are useful as theoretical bases for the design and preparation of the Fe-doped ZnO system’s magneto-optical properties. - Highlights: • A biomonitoring tool for the freshwater zone of template estuaries. • Water quality characterization related to nutrients and organic matter enrichment. • The percentage of a group of 24 tolerant species were capable of detecting the impairment of the water quality. • Characterization of morpho-functional traits of the selected tolerant species.

Structural and optical properties of Si-doped GaN

OpenAIRE

Cremades Rodríguez, Ana Isabel; Gorgens, L.; Ambacher, O.; Stutzmann, M.; Scholz, F.

2000-01-01

Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress...

Fabrication and Photostability of Rhodamine-6G Gold Nanoparticle Doped Polymer Optical Fiber

International Nuclear Information System (INIS)

Sebastian, Suneetha; Ajina, C; Vallabhan, C. P. G; Nampoori, V. P. N.; Radhakrishnan, P.; Kailasnath, M.

2013-01-01

We report on fabrication of a rhodamine-6G-gold-nanoparticle doped polymer optical fiber. The gold nanoparticle is synthesized directly into the monomer solution of the polymer using laser ablation synthesis in liquid. The size of the particle is found from the transmission electron microscopy. Rhodamine-6G is then mixed with the nanoparticle-monomer solution and optical characterization of the solution is investigated. It is found that there is a pronounced quenching of fluorescence of rhodamine 6G due to fluorescence resonance energy transfer. The monomer solution containing rhodamine 6G and gold nanoparticles is now made into a cylindrical rod and drawn into a polymer optical fiber. Further, the photostability is calculated with respect to the pure dye doped polymer optical fiber

Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

International Nuclear Information System (INIS)

Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

2006-01-01

There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

Phosphate-core silica-clad Er/Yb-doped optical fiber and cladding pumped laser.

Science.gov (United States)

Egorova, O N; Semjonov, S L; Velmiskin, V V; Yatsenko, Yu P; Sverchkov, S E; Galagan, B I; Denker, B I; Dianov, E M

2014-04-07

We present a composite optical fiber with a Er/Yb co-doped phosphate-glass core in a silica glass cladding as well as cladding pumped laser. The fabrication process, optical properties, and lasing parameters are described. The slope efficiency under 980 nm cladding pumping reached 39% with respect to the absorbed pump power and 28% with respect to the coupled pump power. Due to high doping level of the phosphate core optimal length was several times shorter than that of silica core fibers.

Nonlinear Optical Characteristics of Crystal VioletDye Doped Polystyrene Films by Using Z-Scan Technique

Directory of Open Access Journals (Sweden)

Mahasin F. Hadi

2017-07-01

Full Text Available Z-scan technique was employed to study the nonlinear optical properties (nonlinear refractive index and nonlinear absorption coefficient for crystal violet doped polystyrene films as a function of doping ratio in chloroform solvent. Samples exhibits in closed aperture Z-scan positive nonlinear refraction (self-focusing. While in the open aperture Z-scan gives reverse saturation absorption (RSA (positive absorption for all film with different doping ratio making samples candidates for optical limiting devices for protection of sensors and eyes from energetic laser light pulses under the experimental conditions.

Evanescent field characterisation for a d-shaped optical fibre using scanning near-field optical microscopy

International Nuclear Information System (INIS)

Huntington, S.T.; Nugent, K.A.; Roberts, A.; Mulvaney, P.; Lo, K.M.

1997-01-01

Scanning near field optical microscopy is used to measure the evanescent filed and mode profile of a Ge-doped D-shaped optical fibre. The structure of the fibre is determined by differential etching followed by an investigation of the resultant topography with an atomic force microscope. This information is then used to theoretically model the expected behaviour of the fibre and it is shown that the theoretically model the expected behaviour of the fibre and it is shown that the theoretical results are in excellent agreement with the experimentally observed fields

Optical excitations in CuO2-sheets doped and undoped with electrons

International Nuclear Information System (INIS)

Tokura, Y.; Arima, T.; Koshihara, S.; Takagi, H.; Ido, T.; Ishibashi, S.; Uchida, S.

1989-01-01

This paper reports optical reflectance spectra measured on single crystals of parent families of high T c copper oxide compounds with single-layered CuO 2 -sheets, which clearly show the strong transitons across the charge-transfer (CT) gaps at 1.5-2.0 eV in various types of CuO 2 -sheets. The carrier-doping effects on the CT excitations have been investigated on the Sr-doped La 2 CuO 4 and Ce-doped Nd 2 O 4 crystals

The structural, electronic and optical properties of Nd doped ZnO using first-principles calculations

Science.gov (United States)

Wen, Jun-Qing; Zhang, Jian-Min; Chen, Guo-Xiang; Wu, Hua; Yang, Xu

2018-04-01

The density functional theory calculations using general gradient approximation (GGA) applying Perdew-Burke-Ernzerhof (PBE) as correlation functional have been systematically performed to research the formation energy, the electronic structures, band structures, total and partial DOS, and optical properties of Nd doping ZnO with the content from 6.25% to 12.5%. The formation energies are negative for both models, which show that two structures are energetically stable. Nd doping ZnO crystal is found to be a direct band gap semiconductor and Fermi level shifts upward into conduction band, which show the properties of n-type semiconductor. Band structures are more compact after Nd doping ZnO, implying that Nd doping induces the strong interaction between different atoms. Nd doping ZnO crystal presents occupied states at near Fermi level, which mainly comes from the Nd 4f orbital. The calculated optical properties imply that Nd doping causes a red-shift of absorption peaks, and enhances the absorption of the visible light.

Optical-limiting response of rare-earth metallo-phthalocyanine-doped copolymer matrix

NARCIS (Netherlands)

Aneeshkumar, B.N.; Gopinath, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, J.

2003-01-01

The nanosecond optical-limiting characteristics (at 532 nm) of some rare-earth metallo-phthalocyanines (Sm(Pc)2, Eu(Pc)2, and LaPc) doped in a copolymer matrix of poly(Me methacrylate) and Me-2-cyanoacrylate were studied for the 1st time to the authors' knowledge. The optical-limiting response is

Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

International Nuclear Information System (INIS)

Oezer, N.; Sabuncu, S.

1997-01-01

Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

The study of electronic structures and optical properties of Al-doped GaN

International Nuclear Information System (INIS)

Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

2011-01-01

The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology

Science.gov (United States)

Faheem, M.; Zhang, Y.; Dai, X.

2018-03-01

The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.

Resonantly cladding-pumped Yb-free Er-doped LMA fiber laser with record high power and efficiency.

Science.gov (United States)

Zhang, Jun; Fromzel, Viktor; Dubinskii, Mark

2011-03-14

We report the results of our power scaling experiments with resonantly cladding-pumped Er-doped eye-safe large mode area (LMA) fiber laser. While using commercial off-the-shelf LMA fiber we achieved over 88 W of continuous-wave (CW) single transverse mode power at ~1590 nm while pumping at 1532.5 nm. Maximum observed optical-to-optical efficiency was 69%. This result presents, to the best of our knowledge, the highest power reported from resonantly-pumped Yb-free Er-doped LMA fiber laser, as well as the highest efficiency ever reported for any cladding-pumped Er-doped laser, either Yb-co-doped or Yb-free.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Influence Al doped ZnO nanostructure on structural and optical properties

International Nuclear Information System (INIS)

Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

2016-01-01

The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

Commercial Optics for Space Surveillance and Astronomy

Science.gov (United States)

Ackermann, M.; Kopit, E.; McGraw, J.; Zimmer, P.

Since the first days of the space program, there have been both amateur and government satellite watchers. Large, expensive government systems with custom optics are still the most capable, but with modern sensors and high speed computers, amateur trackers are easily pushing the limits of what government systems achieved only a decade ago. A very recent trend in the space world is the emergence of commercial space operations centers. Once the exclusive purview of governments, corporations are now providing orbital environment awareness services to the operators of commercial satellites. The requirement for synoptic satellite observations has led to corporations developing world-wide observing networks. A problem facing both amateur and corporate observers is the limited availability of suitable optical systems. Most observing efforts rely on long focus (f/8 or greater) optical systems with focal reducers, and a somewhat limited field of view. Often, the cameras in use are not ideally matched to the optical system. While there are a few exceptions, the choices are not many. Celestron recently introduced the C-11 RASA optical system, with an 11-inch aperture and an f/2.2 focal ratio. This optical system is designed for dedicated imaging and is ideally suited for both wide-field astronomy and the detection and tracking of satellites. The larger C-14 RASA, to be introduced later this year, was specifically designed for wide-field imaging with large commercial CCDs. It offers greater sensitivity and a wider field of view than the smaller C-11 RASA and should prove to be the instrument of choice for both amateur and corporate satellite observers. We present data from satellite observations with a production model C-11 RASA and estimated performance for the new C-14 RASA.

Commercialization and Standardization Progress Towards an Optical Communications Earth Relay

Science.gov (United States)

Edwards, Bernard L.; Israel, David J.

2015-01-01

NASA is planning to launch the next generation of a space based Earth relay in 2025 to join the current Space Network, consisting of Tracking and Data Relay Satellites in space and the corresponding infrastructure on Earth. While the requirements and architecture for that relay satellite are unknown at this time, NASA is investing in communications technologies that could be deployed to provide new communications services. One of those new technologies is optical communications. The Laser Communications Relay Demonstration (LCRD) project, scheduled for launch in 2018 as a hosted payload on a commercial communications satellite, is a critical pathfinder towards NASA providing optical communications services on the next generation space based relay. This paper will describe NASA efforts in the on-going commercialization of optical communications and the development of inter-operability standards. Both are seen as critical to making optical communications a reality on future NASA science and exploration missions. Commercialization is important because NASA would like to eventually be able to simply purchase an entire optical communications terminal from a commercial provider. Inter-operability standards are needed to ensure that optical communications terminals developed by one vendor are compatible with the terminals of another. International standards in optical communications would also allow the space missions of one nation to use the infrastructure of another.

Structure and Stability of GeAun, n = 1-10 clusters: A Density Functional Study

International Nuclear Information System (INIS)

Priyanka,; Dharamvir, Keya; Sharma, Hitesh

2011-01-01

The structures of Germanium doped gold clusters GeAu n (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu n clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu n clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding silicon doped gold cluster. The HUMO-LOMO gap for Au n Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.

Characterization and optical properties of Pr2O3-doped ...

Indian Academy of Sciences (India)

2017-06-09

Jun 9, 2017 ... Pr3+ doped molybdenum lead-borate glasses with the chemical ... Thermal, optical and structural analyses are carried out using DSC, UV and FTIR spectra. ... energy band gap (Egopt), of these glasses have been determined.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Photoluminescence, reddish orange long persistent luminescence and photostimulated luminescence properties of praseodymium doped CdGeO3 phosphor

International Nuclear Information System (INIS)

Jin, Yahong; Hu, Yihua; Chen, Li; Fu, Yinrong; Mu, Zhongfei; Wang, Tao; Lin, Jun

2014-01-01

Highlights: • A novel phosphor CdGeO 3 :Pr 3+ was synthesized successfully. • The persistent luminescence properties of CdGeO 3 :Pr 3+ were studied. • The photostimulated luminescence properties of CdGeO 3 :Pr 3+ were investigated. • The persistent and photostimulated luminescence mechanisms were discussed in detail. - Abstract: Praseodymium doped CdGeO 3 phosphors were prepared successfully by a conventional high temperature solid-state reaction method. It showed reddish orange long persistent luminescence (LPL) after the short UV-irradiation. The reddish orange photostimulated luminescence (PSL) was also observed upon near infrared stimulation at 980 nm after per-exposure into UV light. The origin of LPL and PSL was identified with the emission from Pr 3+ ions with the aid of traps in host lattice. The optimal concentration of Pr 3+ ions for the brightest photoluminescence (PL) emission and the best LPL characteristic were experimentally to be about 3% and 0.5 mol%, respectively. The trapping and de-trapping processes of charge carriers between shallower and deep traps were illustrated. A model was proposed on the basis of experimental results to study the mechanisms of LPL and PSL

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Electrical and optical properties of silicon-doped gallium nitride

Indian Academy of Sciences (India)

Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly ...

First-principles study of bandgap tuning in Ge1-xPbxSe

Science.gov (United States)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

Synthesis and properties of Co-doped titanate nanotubes and their optical sensitization with methylene blue

International Nuclear Information System (INIS)

Ferreira, V.C.; Nunes, M.R.; Silvestre, A.J.; Monteiro, O.C.

2013-01-01

Here we report on a novel chemical route to synthesize homogenous cobalt-doped titanate nanotubes (CoTNT), using an amorphous Co-doped precursor. The influence of the synthesis temperature, autoclave dwell time and metal doping on the structural and microstructural as well as on the optical properties of the synthesized titanate nanotubes is studied and discussed. The optical band gaps of the CoTNT samples are red shifted in comparison with the values determined for the undoped samples, such red shifts bringing the absorption edge of the CoTNT samples into the visible region. CoTNT materials also demonstrate particular high adsorption ability for methylene blue, the amount of the adsorbed dye being higher than the one predictable for a monolayer formation. This suggests the possibility of intercalation of the dye molecule between the TiO 6 layers of the TNT structure. It is also shown that the methylene blue sensitized Co-doped nanostructures are highly stable under UV radiation and present a strong and broad absorption in the visible region. - Highlights: • New hydrothermal chemical route to synthesize cobalt-doped titanate nanotubes. • The Co-doping stabilizes the TNTs morphology in a temperature range of 160–200 °C. • Optical band gaps of CoTNTs are red shifted compared to the TNT samples. • Methylene blue sensitized CoTNTs are highly stable under UV–vis irradiation

Synthesis and properties of Co-doped titanate nanotubes and their optical sensitization with methylene blue

Energy Technology Data Exchange (ETDEWEB)

Ferreira, V.C. [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CQB, Campo Grande, 1749-016 Lisboa (Portugal); Nunes, M.R. [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CCMM, Campo Grande, 1749-016 Lisboa (Portugal); Silvestre, A.J. [Instituto Superior de Engenharia de Lisboa, Department of Physics and ICEMS, R. Conselheiro Emídio Navarro 1, 1959-007 Lisboa (Portugal); Monteiro, O.C., E-mail: ocmonteiro@fc.ul.pt [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CQB, Campo Grande, 1749-016 Lisboa (Portugal)

2013-10-01

Here we report on a novel chemical route to synthesize homogenous cobalt-doped titanate nanotubes (CoTNT), using an amorphous Co-doped precursor. The influence of the synthesis temperature, autoclave dwell time and metal doping on the structural and microstructural as well as on the optical properties of the synthesized titanate nanotubes is studied and discussed. The optical band gaps of the CoTNT samples are red shifted in comparison with the values determined for the undoped samples, such red shifts bringing the absorption edge of the CoTNT samples into the visible region. CoTNT materials also demonstrate particular high adsorption ability for methylene blue, the amount of the adsorbed dye being higher than the one predictable for a monolayer formation. This suggests the possibility of intercalation of the dye molecule between the TiO{sub 6} layers of the TNT structure. It is also shown that the methylene blue sensitized Co-doped nanostructures are highly stable under UV radiation and present a strong and broad absorption in the visible region. - Highlights: • New hydrothermal chemical route to synthesize cobalt-doped titanate nanotubes. • The Co-doping stabilizes the TNTs morphology in a temperature range of 160–200 °C. • Optical band gaps of CoTNTs are red shifted compared to the TNT samples. • Methylene blue sensitized CoTNTs are highly stable under UV–vis irradiation.

Optically enhanced nuclear cross polarization in acridine-doped fluorene

Energy Technology Data Exchange (ETDEWEB)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute /sup 13/C nuclei in the solid state. The idea was to create /sup 1/H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the /sup 13/C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large /sup 1/H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large /sup 13/C polarizations have been created in fluorene single crystals. These large /sup 13/C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined.

Optically enhanced nuclear cross polarization in acridine-doped fluorene

International Nuclear Information System (INIS)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute 13 C nuclei in the solid state. The idea was to create 1 H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the 13 C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large 1 H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large 13 C polarizations have been created in fluorene single crystals. These large 13 C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined

Optical spectroscopy of Eu3+ doped Th(MoO4)2

International Nuclear Information System (INIS)

Keskar, Meera; Phatak, Rohan; Gupta, Santhosh; Natarajan, V.

2014-01-01

Eu 3+ is often used as a structural probe, because of the relative simplicity of its energy-level structure and dependence on its site symmetry in the host material. The phonon energy of the host for rare-earth ions is a crucial factor to be considered for developing luminescent materials.Thorium molybdate can satisfy both low phonon energy environment for rare-earth ions and good chemical and mechanical stabilities for practical use. Thus Eu 3+ doped Th(MoO 4 ) 2 are expected to be a good promising optical materials. To the best of our knowledge, there is no report on optical spectroscopy of Eu 3+ doped thorium molybdate and thus work has been carried out and discussed in this paper

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Science.gov (United States)

Sushama, D.

2014-10-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er2O3 doped TeO2-WO3-La2O3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

International Nuclear Information System (INIS)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi; Liu, Bo; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin; Huo, Ruru

2015-01-01

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge 2 Sb 2 Te 5 (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr 10 (Ge 2 Sb 2 Te 5 ) 90 (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention

Ultrafast optical manipulation of atomic motion in multilayer Ge-Sb-Te phase change materials

Directory of Open Access Journals (Sweden)

Fons P.

2013-03-01

Full Text Available Phase change random access memory devices have evolved dramatically with the recent development of superlattice structure of Ge-Sb-Te material (GST-SL in terms of its low power consumption. The phase change in GST-SL is mainly characterized by the displacement of Ge atoms. Here we examine a new phase change method, that is the manipulation of Ge-Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result, we found that the p-polarized pump pulse is more effective in inducing the reversible and irreversible displacement of Ge atoms along [111] direction in the local structure. This structural change would be induced by the anisotropic carrier-phonon interaction along the [111] direction created by the p-polarized pulse.

Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

Science.gov (United States)

Maeda, Y

1994-01-10

Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

Optical properties of ion beam modified waveguide materials doped with erbium and silver

NARCIS (Netherlands)

Strohhöfer, C. (Christof)

2001-01-01

In the first part of this thesis we investigate codoping of erbium-doped waveguide materials with different ions in order to increase the efficiency of erbium-doped optical amplifiers. Codoping with ytterbium can overcome the limitations due to the small absorption cross section of Er3+ in Al2O3 at

Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

2005-01-01

Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

Synthesis and characterization of erbium-doped SiO{sub 2}-TiO{sub 2} thin films prepared by sol-gel and dip-coating techniques onto commercial glass substrates as a route for obtaining active GRadient-INdex materials

Energy Technology Data Exchange (ETDEWEB)

Gómez-Varela, Ana I. [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain); Castro, Yolanda, E-mail: castro@icv.csic.es [Instituto de Cerámica y Vidrio (CSIC), Kelsen 5, Campus de Cantoblanco, Madrid 28049 (Spain); Durán, Alicia [Instituto de Cerámica y Vidrio (CSIC), Kelsen 5, Campus de Cantoblanco, Madrid 28049 (Spain); De Beule, Pieter A.A. [Applied Nano-Optics Laboratory, International Iberian Nanotechnology Laboratory, Braga 4715-330 (Portugal); Flores-Arias, María T. [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain); Bao-Varela, Carmen, E-mail: carmen.bao@usc.es [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain)

2015-05-29

In this work, SiO{sub 2}-TiO{sub 2} films doped with erbium were prepared by dip-coating sol-gel process onto commercial glass substrates. The surface morphology of the films was characterized using atomic force microscopy, while thickness, refractive index, extinction coefficient and porosity of the films were determined by ellipsometric measurements in a wavelength region of 400-1000 nm. Optical constants and porosity were found to vary with erbium concentration. The proof of principle presented in this paper is applicable to systems of different nature by tailoring the sol-gel precursors in such a way that active GRadient-INdex media described by a complex, parabolic-like refractive index distribution for beam shaping purposes is obtained. - Highlights: • Sol-gel route for preparation of active GRadient-INdex materials is proposed. • SiO{sub 2}-TiO{sub 2} films doped with erbium were prepared by dipping onto commercial glasses. • Morphological and optical characterization of the samples was performed. • Optical constants and porosity were found to vary with erbium concentration. • Refractive index diminishes with dopant content; the contrary occurs for porosity.

Optical Properties of Gallium-Doped Zinc Oxide—A Low-Loss Plasmonic Material: First-Principles Theory and Experiment

Directory of Open Access Journals (Sweden)

Jongbum Kim

2013-12-01

Full Text Available Searching for better materials for plasmonic and metamaterial applications is an inverse design problem where theoretical studies are necessary. Using basic models of impurity doping in semiconductors, transparent conducting oxides (TCOs are identified as low-loss plasmonic materials in the near-infrared wavelength range. A more sophisticated theoretical study would help not only to improve the properties of TCOs but also to design further lower-loss materials. In this study, optical functions of one such TCO, gallium-doped zinc oxide (GZO, are studied both experimentally and by first-principles density-functional calculations. Pulsed-laser-deposited GZO films are studied by the x-ray diffraction and generalized spectroscopic ellipsometry. Theoretical studies are performed by the total-energy-minimization method for the equilibrium atomic structure of GZO and random phase approximation with the quasiparticle gap correction. Plasma excitation effects are also included for optical functions. This study identifies mechanisms other than doping, such as alloying effects, that significantly influence the optical properties of GZO films. It also indicates that ultraheavy Ga doping of ZnO results in a new alloy material, rather than just degenerately doped ZnO. This work is the first step to achieve a fundamental understanding of the connection between material, structural, and optical properties of highly doped TCOs to tailor those materials for various plasmonic applications.

Electrical and optical properties of Si-doped Ga2O3

Science.gov (United States)

Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

2017-05-01

The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

Test of a Fiber Optic-Based LYSO Scintillator Dosimeter in a 60Co Irradiation Chamber

International Nuclear Information System (INIS)

Kim, Tae Hyoung; Kim, Jae Kyung; Park, Jae Woo

2010-01-01

Due to its excellent remote measurability and high spatial resolution, the fiber optic-based radiation dosimeter has been extensively explored for its usability in medical applications by several researchers. In the previous work, we reported the result of our investigation on feasibility of a photon dosimeter constructed with a BGO(Bi 4 Ge 3 O 12 ) or GSO(Gd 2 SiO 5 ) scintillator piece coupled to a plastic optical fiber. The plastic optical fiber had a diameter of 3mm and the scintillator piece was in a cylindrical form with 5mm diameter. The size of the scitillator piece as well as the fiber should be as small as possible for higher spatial resolution, and the radiation hardness should be high enough for stable operation in strong radiation fields. Recently, LYSO(Cerium-doped Lutetium Yttrium Orthosilicate) scintillators, which have much higher light yield and radiation hardness than BGO and GSO, have been commercially available. This paper reports the result of our investigation on dosimetric characteristics of a fiber optic-based dosimeter employing a smaller LYSO scintillator piece with 2mm diameter coupled to a silica optical fiber with 1mm core diameter

Thermo- and electro-optical properties of photonic liquid crystal fibers doped with gold nanoparticles

Directory of Open Access Journals (Sweden)

Agata Siarkowska

2017-12-01

Full Text Available Thermo- and electro-optical properties of a photonic liquid crystal fiber (PLCF enhanced by the use of dopants have been investigated. A 6CHBT nematic liquid crystal was doped with four different concentrations of gold nanoparticles (NPs, 0.1, 0.3, 0.5 and 1.0 wt %, for direct comparison of the influence of the dopant on the properties of the PLCF. The thermo-optical effects of the liquid crystal doped with gold NPs were compared in three setups, an LC cell, a microcapillary and within the PLCF, to determine if the observed responses to external factors are caused by the properties of the infiltration material or due to the setup configuration. The results obtained indicated that with increasing NP doping a significant reduction of the rise time under an external electric field occurs with a simultaneous decrease in the nematic–isotropic phase transition temperature, thus improving the thermo- and electro-optical properties of the PLCF.

Thermo- and electro-optical properties of photonic liquid crystal fibers doped with gold nanoparticles.

Science.gov (United States)

Siarkowska, Agata; Chychłowski, Miłosz; Budaszewski, Daniel; Jankiewicz, Bartłomiej; Bartosewicz, Bartosz; Woliński, Tomasz R

2017-01-01

Thermo- and electro-optical properties of a photonic liquid crystal fiber (PLCF) enhanced by the use of dopants have been investigated. A 6CHBT nematic liquid crystal was doped with four different concentrations of gold nanoparticles (NPs), 0.1, 0.3, 0.5 and 1.0 wt %, for direct comparison of the influence of the dopant on the properties of the PLCF. The thermo-optical effects of the liquid crystal doped with gold NPs were compared in three setups, an LC cell, a microcapillary and within the PLCF, to determine if the observed responses to external factors are caused by the properties of the infiltration material or due to the setup configuration. The results obtained indicated that with increasing NP doping a significant reduction of the rise time under an external electric field occurs with a simultaneous decrease in the nematic-isotropic phase transition temperature, thus improving the thermo- and electro-optical properties of the PLCF.

Optical and structural characterization of rare earth doped niobium phosphate glasses

International Nuclear Information System (INIS)

Sene, F.F.; Martinelli, J.R.; Gomes, L.

2004-01-01

Phosphate glasses containing up to 45mol% of niobium were obtained. X-ray diffraction, infrared, Raman, and optical absorption spectroscopy were used to analyze those materials. The refractive index varies from 1.70 to 1.85 as the amount of Nb increases. Niobium phosphate glasses with optical transparence in the (400-2500nm) range were produced. The cut off varied from 342nm to 378nm as a function of the Nb concentration. The cut off is due to the charge transfer O 2 ->Nb 5+ . Glasses containing 10mol% of Nb 2 O 5 are the most promising materials to be used as rare-earth ions hosts because they are chemically resistant, and show optical transparency in the spectral range of visible to infrared. Doping the glasses with 1-5mol% of Er, Ho, Pr, and Yb ions does not change the glass structure, as measured by X-ray diffraction, infrared, and Raman spectroscopy. The fluorescence lifetimes were determined for Nd, Yb, and Er, and the absorption cross-section were determined for all ions. The energy transfer in co-doped Yb-Er system was measured, and the lifetime of excited states and the luminescence efficiency were determined to be 91% for the Er 4 I 11/2 level, in the Yb-Er co-doped glasses

Radiation Effects on Ytterbium-doped Optical Fibers

Science.gov (United States)

2014-06-02

conducted on Er- doped fiber amplifiers (Lezius, et al., 2012; Ahrens, et al., 1999; Ahrens, Jaques , LuValle, DiGiovanni, & Windeler, 2001; Ott, 2004...Ahrens, R. G., Abate, J. A., Jaques , J. J., Presby, H. M., Fields, A. B., DiGiovanni, D. J., LuValle, M. J. (1999). Radiation reliability of rare... Jaques , J. J., LuValle, M. J., DiGiovanni, D. J., & Windeler, R. S. (2001). Radiation effects on optical fibers and amplifiers. Testing, Reliability

Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

Science.gov (United States)

Mirzaee, Majid; Dolati, Abolghasem

2015-03-01

We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

Electrical properties of phosphorene systems doped with fourth-period elements

Science.gov (United States)

Wang, Ke; Wang, Hai; Zhang, Min; Liu, Yan; Zhao, Wei

2018-05-01

In this work, we use a first-principles calculation to investigate the structure, binding energies, and electrical properties of monolayer phosphorene systems doped with fourth-period main group elements at a doping concentration of 6.25%. The calculation results reveal that, although large deformations exist, all doped systems are stable and non-spin polarized. In addition, the Ca, Se, and Br atoms are electron acceptors in the doped systems, whereas the Ga, Ge and As atoms are donors. Thus, there is an ionic bonding character between the dopants and neighboring phosphorus atoms in the Ca-, Ga-, Ge-, As-, Se-, and Br-doped systems. From band structures, we find that the K-, Ga-, As-, and Br-doped systems present semiconducting states with indirect gaps, whereas the Ca-, Ge-, and Se-doped systems have metallic states. We conclude that the metallicity of a phosphorene system doped with main-group elements depends on the number of valence electrons of the dopant. This investigation provides directions for manipulating the electrical properties of phosphorene by substitutional doping, which would broaden its possible applications in optoelectronics.

Evolution of microstructural defects of TiO2 nanocrystals by Zr4+ or/and Ge4+ doping lead to high disinfection efficiency for CWAs

Science.gov (United States)

Shen, Zhong; Zhong, Jin-Yi; Chai, Na-Na; He, Xin; Zang, Jian-Zheng; Xu, Hui; Han, Xiao-Yuan; Zhang, Peng

2017-06-01

Zr4+, Ge4+ doped and co-doped TiO2 nanoparticles were prepared by a 'one-pot' homogeneous precipitation method. The photocatalytic reaction kinetics of DMMP and the disinfection efficiency of HD, GD and VX on the samples were investigated. By means of a variety of characterization methods, especially the positron annihilation lifetime spectroscopy, the changes in structure and property of TiO2 across doping were studied. The results show that the reasonable engineering design of novel photocatalysts in the field of CWAs decontamination can be realized by adjusting the bulk-to-surface defects ratio, except for crystal structure, specific surface area, pore size distribution and light utilization.

Studies on optical properties of antimony doped SnO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Gürakar, Sibel, E-mail: sgurakar@eng.ankara.edu.tr; Serin, Tülay, E-mail: serin@eng.ankara.edu.tr; Serin, Necmi, E-mail: nserin@eng.ankara.edu.tr

2015-10-15

Highlights: • Antimony doped tin oxide thin films were grown by spray method on glass substrates. • The antimony doping was varied from 0 to 4 at%. • The structural properties of the films were investigated by X-ray diffraction method. • A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. • The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model to determine the optical parameters. - Abstract: Antimony doped tin oxide thin films were grown by spray method on microscope glass substrates. The antimony doping was varied from 0 to 4 at%. The structural properties of the films were investigated by X-ray diffraction method. The optical transmittances of thin films were measured with UV-Vis-NIR spectrometer in the 300–2000 nm wavelength range. A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model and the important oscillating parameters such as the dispersion energy E{sub d}, the oscillation energy E{sub o}, the high frequency dielectric constant ε{sub ∞} were determined. The analysis of the refractive index has been carried out to calculate the lattice dielectric constant ε{sub L} and the ratio of carrier concentration to the effective mass N/m*. The real and imaginary parts of the electronic dielectric constant and optical conductivity were analyzed. The optical band gap, E{sub g} values of the films were obtained from the spectral dependence of the absorption coefficient, using the Tauc relation.

Development of a distributed radiation detection system using optical fibers

Energy Technology Data Exchange (ETDEWEB)

Jensen, F; Inouchi, Goro; Takada, Eiji; Takahashi, Hiroyuki; Iguchi, Tetsuo; Nakazawa, Masaharu [Tokyo Univ. (Japan). Faculty of Engineering; Kakuta, Tsunemi

1996-07-01

We have confirmed the importance of temperature and dose rate for the response of Ge-doped fibers to radiation. A phenomenological model have been found to account for temperature and dose rate effects. From this model it is possible to make dose predictions from attenuation measurements when the temperature and dose rate are known. Ge-doped fibers have been found to have a relatively low sensitivity to both neutron and gamma radiation. In addition, temperature and dose rate dependencies complicate the analysis. However we point out that these problems may all be solved if we use fibers, such as P-doped fibers, which contain color centers of long lifetime. This would remove both the temperature and dose rate dependencies that complicate the use of Ge-doped fibers, in addition the radiation sensitivity is increased. Finally OTDR has been investigated as a possible read-out method for distributed radiation measurements. For our system the minimum pulse length was 3ns, giving a spatial resolution in the meter range and a response length to radiation of about 10 m if accurate dose values where to be obtained. We found OTDR to be a suitable method for radiation induced attenuation measurements in optical fibers, especially for long fiber lengths and long time scales where questions of light source stability becomes important for other systems. (S.Y.)

Hydrogen bonding intermolecular effect on electro-optical response of doped 6PCH nematic liquid crystal with some azo dyes

Science.gov (United States)

Kiani, S.; Zakerhamidi, M. S.; Tajalli, H.

2016-05-01

Previous studies on the electro-optical responses of dye-doped liquid crystal have shown that dopant material have a considerable effect on their electro-optical responses. Despite the studies carried out on electro-optical properties of dye-doped liquid crystal, no attention has been paid to study of the interaction and structural effects in this procedure. In this paper, linear dyes and with similar structure were selected as dopants. The only difference in used dyes is the functional groups in their tails. So, doping of these dyes into liquid crystals determines the influence of interaction type on electro-optical behaviours of the doped systems. Therefore, in this work, two aminoazobenzene (;A-dye;: hydrogen bond donor) and dimethyl-aminoazobenzene (;B-dye;) dyes with different compositional percentages in liquid crystal host were used. Electro-optical Kerr behaviour, the pre-transition temperature and third order nonlinear susceptibility were investigated. The obtained results effectively revealed that type of interactions between the dye and liquid crystal is determinative of behavioral difference of doped system, compared to pure liquid crystal. Also, pre-transitional behaviour and thereupon Kerr electro-optical responses were affected by formed interactions into doped systems. In other words, it will be shown that addition of any dopants in liquid crystal, regardless of the nature of interactions, cannot cause appropriate electro-optical responses. In fact, type of dye, nature of interactions between dopant and liquid crystalline host as well as concentration of dye are the key factors in selecting the appropriate liquid crystal and dopant dye.

Optical fiber radiation sensors: first in vivo measurements during orbital irradiation

International Nuclear Information System (INIS)

Gripp, S.; Bannach, B.; Muskalla, K.; Haesing, F.; Bueker, H.; Schmitt, G.

1995-01-01

Purpose: To investigate the applicability of doped optical fiber radiation sensors in clinical dosimetry. Methods: Ionizing radiation causes a dose depending discoloring in silica. When proper impurities (doping agents) are added, the radiation sensitivity may be increased to a range suited for clinical dosimetry. We performed in-vivo-measurements using a lead doped silica fiber (d TM ) in comparison to thermoluminescence detectors (TLDs). Results: The scattered radiation is easily detected with this sensor fiber. In contrast to TLDs the dose and doserate values are obtained immediately and setup errors can be recognized before irradiation is completed. The SD clearly depends on setup modifications due to the extent of disease. Other doping agents (GeP) provide better tissue equivalence and less energy dependence. Conclusions: Optical fibers are suitable for in vivo dosimetry purposes. Fiber sensors provide real time dose values, and the readout procedure is much easier compared to TLDs. These features may gain significance in quality assurance, conformal therapy, and intraoperative radiotherapy (IORT)

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Energy Technology Data Exchange (ETDEWEB)

Sushama, D., E-mail: sushasukumar@gmail.com [Research Awardee, LAMP, Dept. of Physics, Nit, Calicut, India and Dept. of Physics, M.S.M. College, Kayamkulam, Kerala (India)

2014-10-15

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

International Nuclear Information System (INIS)

Sushama, D.

2014-01-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er 2 O 3 doped TeO 2 ‐WO 3 ‐La 2 O 3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Optical study of Erbium-doped-porous silicon based planar waveguides

Energy Technology Data Exchange (ETDEWEB)

Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France) and Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia)]. E-mail: najar.adel@laposte.net; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B.P. 80518, 22305 Lannion Cedex (France)

2007-06-15

Planar waveguides were formed from porous silicon layers obtained on P{sup +} substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er{sup 3+} ions in the IR range and the decay curve of the 1.53 {mu}m emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 {mu}m after doping.

Electronic and optical properties of Y-doped Si{sub 3}N{sub 4} by density functional theory

Energy Technology Data Exchange (ETDEWEB)

Huang, Zhifeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Chen, Fei, E-mail: chenfei027@gmail.com [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China); Su, Rui; Wang, Zhihao; Li, Junyang; Shen, Qiang [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Lianmeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China)

2015-07-15

Highlights: • Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are systematically investigated by DFT. • Impacts of local structure and bond character on electronic property are studied. • Static dielectric constants and optical absorption properties are investigated. - Abstract: Geometry structures, formation energies, electronic and optical properties of Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are investigated based on the density functional theory (DFT). The low values of formation energies indicate both Y-doped Si{sub 3}N{sub 4} models can be easily synthesized. Besides, the negative formation energies of α-Y{sub i}-Si{sub 3}N{sub 4} demonstrate that interstitial Y-doped α-Si{sub 3}N{sub 4} has an excellent stability. The energies of impurity levels are different resulting from the different chemical environment around Y atoms. The impurity levels localized in the band gap reduces the maximum energy gaps, which enhances the optical properties of Si{sub 3}N{sub 4}. The static dielectric constants become larger and the optical absorption spectra show the red-shift phenomena for all Y-doped Si{sub 3}N{sub 4} models.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

Science.gov (United States)

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

Optical gain of LaF3:Nd nanoparticle doped polymers for active integrated optical devices

NARCIS (Netherlands)

Stouwdam, J.W.; Klunder, D.J.W.; Borreman, A.; Diemeer, Mart; Worhoff, Kerstin; Driessen, A.; de Ridder, R.M.; de Ridder, R.M; Altena, G; Altena, G.; Geuzebroek, D.H.; Dekker, R; Dekker, R.

2003-01-01

We report on rare earth doped LaF3 nanoparticles dispersed in PMMA and SU-8 photosensitive polymers. We observed optical gain after we applied these materials for waveguides. Experimental results on various samples will be discussed. We theoretically discuss the improvements that can be obtained and

Effect of Zn doping on optical properties and photoconductivity of ...

Indian Academy of Sciences (India)

Keywords. Thin film; spray pyrolysis; tin sulfide; optical properties; photoluminescence; photoconductivity. 1. ... ber of compounds with CdI2 structure, has interesting proper- ties such .... STM images of 0, 2·5, 5 and 7·5 at% Zn-doped SnS2 films.

Nitrogen doped germania glasses with enhanced optical and mechanical properties

DEFF Research Database (Denmark)

Storgaard-Larsen, Torben; Poulsen, Christian; Leistiko, Otto

1997-01-01

A new type of ultraviolet photosensitive germanium doped glass has been developed for use in the fabrication of optical waveguide structures. By adding ammonia to the source gases during a plasma enhanced chemical vapor deposition of these glasses, ultraviolet induced refractive index changes of ...

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-09-05

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Science.gov (United States)

Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

2016-09-01

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Structural, Optical, and Electronic Characterization of Fe-Doped Alumina Nanoparticles

Science.gov (United States)

Heiba, Zein K.; Mohamed, Mohamed Bakr; Wahba, Adel Maher; Imam, N. G.

2018-01-01

The effects of iron doping on the structural, optical, and electronic properties of doped alumina have been studied. Single-phase iron-doped alumina Al2- x Fe x O3 ( x = 0.00 to 0.30) nanoparticles were synthesized via citrate-precursor method. Formation of single-phase hexagonal corundum structure with no other separate phases was demonstrated by x-ray diffraction (XRD) analysis and Fourier-transform infrared spectroscopy. The effects of iron doping on the α-Al2O3 structural parameters, viz. atomic coordinates, lattice parameters, crystallite size, and microstrain, were estimated from XRD data by applying the Rietveld profile fitting method. Transmission electron microscopy further confirmed the nanosize nature of the prepared samples with size ranging from 12 nm to 83 nm. The electronic band structure was investigated using density functional theory calculations to explain the decrease in the energy gap of Al2- x Fe x O3 as the amount of Fe was increased. The colored emission peaks in the visible region (blue, red, violet) of the electromagnetic spectrum obtained for the Fe-doped α-Al2O3 nanoparticles suggest their potential application as ceramic nanopigments.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

Energy Technology Data Exchange (ETDEWEB)

Podkopaev, O. I. [Joint-Stock Company “Germanium” (Russian Federation); Shimanskiy, A. F., E-mail: shimanaf@mail.ru [Siberian Federal University (Russian Federation); Kopytkova, S. A.; Filatov, R. A. [Joint-Stock Company “Germanium” (Russian Federation); Golubovskaya, N. O. [Siberian Federal University (Russian Federation)

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

International Nuclear Information System (INIS)

Podkopaev, O. I.; Shimanskiy, A. F.; Kopytkova, S. A.; Filatov, R. A.; Golubovskaya, N. O.

2016-01-01

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Optical, thermal and magnetic studies of pure and cobalt chloride doped L-alanine cadmium chloride

Energy Technology Data Exchange (ETDEWEB)

Benila, B.S., E-mail: benjane.benila@gmail.com [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India); Bright, K.C. [Department of Physics, St. John' s College, Anchal, Kollam 691 306 (India); Delphine, S. Mary [Department of Physics, Holy Cross College (Autonomous), Nagercoil 629 004 (India); Shabu, R. [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India)

2017-03-15

Single crystals of L-alanine cadmium chloride (LACC) and cobalt chloride (Co{sup 2+}) doped LACC have been grown by the slow evaporation solution growth technique. The grown crystals were subjected to various characterizations such as powder XRD, SXRD, FTIR, UV–vis, EDAX, TG/DTA, VSM, Dielectric and Second Harmonic Generation (SHG) measurements. The lattice parameters of the grown crystals were determined by single crystal X-ray analysis. EDAX analysis confirms the presence of Co{sup 2+} ion in the host material. The functional group and optical behavior of the crystals were identified from FTIR and UV-vis spectrum analysis. Electrical parameters such as dielectric constant, dielectric loss have been studied. The thermal stability of the compound was found out using TGA/DTA analysis. Second Harmonic Generation of the samples was confirmed by Kurtz-Perry powder technique. Magnetic properties of the crystals studied by VSM were also reported. The encouraging results show that the cobalt chloride doped LACC crystals have greater potential applications in optical devices. - Graphical abstract: Fig (a) and (b) shows the transparent, stable single crystals of pure and doped crystals were obtained using slow evaporation technique. The sizes of pure and doped crystals are 20×9×2 mm{sup 3} and 18×15×1 mm{sup 3} respectively. Fig (c) is the Hysteresis loop traced at room temperature for the pure and doped crystals explains the soft ferromagnetic nature of the doped crystal. The provision for changing the value of coercivity can be used for security, switching and sensing applications. - Highlights: • Defect free crystals of pure and Co{sup 2+} ion doped L-alanine cadmium chloride were grown. • The optical, dielectric and magnetic properties of pure crystals were enhanced by adding Co{sup 2+} ion. • High optical transmittance was obtained in the entire visible and IR region. • Addition of dopant to the pure crystal altered the coercivity. • Low dielectric

Optically stimulated luminescence properties of Tm{sup 3+} doped KMgF{sub 3} fluoro perovskite

Energy Technology Data Exchange (ETDEWEB)

Camargo, L.; Marcazzo, J. [UNCPBA, Facultad de Ciencias Exactas, Instituto de Fisica Arroyo Seco, Gral. Pinto 399, B7000GHG Tandil, Buenos Aires (Argentina); Perez C, L.; Cruz Zaragoza, E. [UNAM, Instituto de Ciencias Nucleares, Apdo. Postal 70543, 04510 Ciudad de Mexico (Mexico); Martinez O, S. A., E-mail: jmarcass@exa.unicen.edu.ar [Universidad Pedagogica y Tecnologica de Colombia, Grupo de Fisica Nuclear Aplicada y Simulacion, Av. Central del Norte 39-115, 150003 Tunja, Bocaya (Colombia)

2017-10-15

In this work the optically stimulated luminescence (OSL) properties of undoped and Tm{sup 3+} doped KMgF{sub 3} fluoro perovskite have been investigated for the first time. OSL efficiency for stimulation with different wavelengths has been analyzed for each compound. The maximum OSL emission was found with blue light stimulation. The radioluminescence (Rl) spectra have shown two emission peaks at 455 and 360 nm, which can be ascribed to the {sup 1}D{sub 2}-{sup 3}F{sub 4} and {sup 1}D{sub 2}-{sup 3}H{sub 6} transitions of the Tm{sup 3+} cations. It has been found that doping with Thulium 0.5 mol % renders the most intense OSL emission. Furthermore, several dosimetric properties such as OSL response as a function of dose, reproducibility of the OSL signal after several cycles of irradiation readout and the minimum detectable dose have been investigated. Finally, the OSL response of KMgF{sub 3}: Tm{sup 3+} has been compared to that of commercial Al{sub 2}O{sub 3}:C and the possible application of this fluoro perovskite to OSL dosimetry has been evaluated. (Author)

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

International Nuclear Information System (INIS)

Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

2006-01-01

The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

Mid-IR optical properties of silicon doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

2017-01-01

of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

Science.gov (United States)

Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menéndez, J.

2017-09-01

Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5-2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optical properties show distinct behavior relative to (GaAs)1-xGe2x counterparts produced by conventional routes. Strong band gap photoluminescence is observed in the 0.5-0.6 eV range for samples whose compositions approach the GaAsGe3 limit for isolated Ga-As pairs. In such samples, the Ge-like Raman modes appear at higher frequencies and are considerably narrower than those observed in samples with higher Ge concentrations. These results suggest that the growth mechanism may favor the formation of ordered phases comprising Ga-As-Ge3 tetrahedra. In contrast with the diamond-to-zincblende ordering transition previously reported for III-V-IV alloys, ordered structures built from Ga-As-Ge3 tetrahedra feature III-III and V-V pairs as third-nearest neighbors, and therefore both the III- and V-components are equally present in each of two fcc sublattices of the average diamond-like structure. These bonding arrangements likely lead to the observed optical response, indicating potential applications of these materials in mid-IR technologies integrated on Si.

Germanium Doping to Improve Carrier Mobility in CdO Films

Directory of Open Access Journals (Sweden)

A. A. Dakhel

2013-01-01

Full Text Available This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( and mobility ( with Ge-incorporation level. The mobility could be improved to a highest value of  cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as  Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.

Study on the optical and electrical properties of tetracyanoethylene doped bilayer graphene stack for transparent conducting electrodes

International Nuclear Information System (INIS)

Limbu, Tej B.; Barrionuevo, Danilo; Katiyar, Ram S.; Morell, Gerardo; Mendoza, Frank; Carpena, Jennifer; Maruyama, Benji; Weiner, Brad R.

2016-01-01

We report the optical and electrical properties of chemically-doped bilayer graphene stack by tetracyanoethylene, a strong electron acceptor. The Tetracyanoethylene doping on the bilayer graphene via charge transfer was confirmed by Raman spectroscopy and Infrared Fourier transform spectroscopy. Doped graphene shows a significant increase in the sheet carrier concentration of up to 1.520 × 10"1"3 cm"−"2 with a concomitant reduction of the sheet resistance down to 414.1 Ω/sq. The high optical transmittance (ca. 84%) in the visible region in combination with the low sheet resistance of the Tetracyanoethylene-doped bilayer graphene stack opens up the possibility of making transparent conducting electrodes for practical applications.

Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

Science.gov (United States)

Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

2005-06-29

Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

Shift in optical properties of Mn doped CdS (A DFT+U study)

Science.gov (United States)

khan, M. Junaid Iqbal; Kanwal, Zarfishan; Nauman Usmani, M.

2018-01-01

Current study is based on PBE-GGA and GGA+U computational approach for calculating optical properties of Mn doped CdS. Cd atom in host CdS lattice (rocksalt structure) are substituted with Mn at various lattice positions and shift in optical properties is observed by increasing supercell size by employing PBE-GGA and Hubbard term. Optical properties vary with changing supercell size and show significant change for GGA+U. Blue shift in absorption spectrum and plots for PDOS, TDOS are in accordance with existing reported work. Moreover strong p-d hybridization is observed due to Mn and S orbital interactions and localization of d-states are scrutinized in vicinity of Fermi level or conduction band minima. GGA+U absorption curve shows redshift and a tremendous change in optical properties is observed due to different bonding. Doping Mn into CdS host lattice illustrates enhancement in Opto-electrical properties which maximizes CdS:Mn system scope in optoelectronic devices.

All-optical control of long-lived nuclear spins in rare-earth doped nanoparticles.

Science.gov (United States)

Serrano, D; Karlsson, J; Fossati, A; Ferrier, A; Goldner, P

2018-05-29

Nanoscale systems that coherently couple to light and possess spins offer key capabilities for quantum technologies. However, an outstanding challenge is to preserve properties, and especially optical and spin coherence lifetimes, at the nanoscale. Here, we report optically controlled nuclear spins with long coherence lifetimes (T 2 ) in rare-earth-doped nanoparticles. We detect spins echoes and measure a spin coherence lifetime of 2.9 ± 0.3 ms at 5 K under an external magnetic field of 9 mT, a T 2 value comparable to those obtained in bulk rare-earth crystals. Moreover, we achieve spin T 2 extension using all-optical spin dynamical decoupling and observe high fidelity between excitation and echo phases. Rare-earth-doped nanoparticles are thus the only nano-material in which optically controlled spins with millisecond coherence lifetimes have been reported. These results open the way to providing quantum light-atom-spin interfaces with long storage time within hybrid architectures.

Microstructural and optical properties of Co doped NiO nanoparticles synthesized by auto combustion using NaOH as fuel

Science.gov (United States)

Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-05-01

The nanoparticles of 5% Co doped NiO were synthesized by auto-combustion method in aqueous medium using NaOH as a fuel. The obtained particles were characterized using X-ray diffraction studies XRD. The results of structural characterization shows the formation of Co doped Nickel oxide nanoparticles in single phase without any impurity. The optical absorption spectra of Co doped NiO sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The variation of dielectric constant and dielectric loss has been studied as function of frequency. Co doping affects the optical properties and band gap. NiO can potentially be used in optical, electronic, catalytic materials, antimicrobial agent and super-paramagnetic devices.

Ge/Si core/shell quantum dots in alumina: tuning the optical absorption by the core and shell size

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Nekić Nikolina

2017-03-01

Full Text Available Ge/Si core/shell quantum dots (QDs recently received extensive attention due to their specific properties induced by the confinement effects of the core and shell structure. They have a type II confinement resulting in spatially separated charge carriers, the electronic structure strongly dependent on the core and shell size. Herein, the experimental realization of Ge/Si core/shell QDs with strongly tunable optical properties is demonstrated. QDs embedded in an amorphous alumina glass matrix are produced by simple magnetron sputtering deposition. In addition, they are regularly arranged within the matrix due to their self-assembled growth regime. QDs with different Ge core and Si shell sizes are made. These core/shell structures have a significantly stronger absorption compared to pure Ge QDs and a highly tunable absorption peak dependent on the size of the core and shell. The optical properties are in agreement with recent theoretical predictions showing the dramatic influence of the shell size on optical gap, resulting in 0.7 eV blue shift for only 0.4 nm decrease at the shell thickness. Therefore, these materials are very promising for light-harvesting applications.

Optical and structural properties of undoped and Mn2+ doped Ca–Li hydroxyapatite nanopowders using mechanochemical synthesis

International Nuclear Information System (INIS)

Ravindranadh, K.; Babu, B.; Pushpa Manjari, V.; Thirumala Rao, G.; Rao, M.C.; Ravikumar, R.V.S.S.N.

2015-01-01

Undoped and Mn 2+ doped calcium–lithium hydroxyapatite (CLHA) nanopowders were prepared by mechanochemical synthesis. The prepared samples were characterized by powder X-ray diffraction, scanning electron microscope, transmission electron microscope, optical absorption, photoluminescence, electron paramagnetic resonance and FT-IR spectroscopy techniques. From powder XRD pattern, lattice cell parameters and average crystallite sizes were evaluated. The morphologies of prepared samples were analyzed by using SEM and TEM studies. Optical and EPR data confirmed that the doped Mn 2+ enter into the host material as distorted octahedral site. Photoluminescence spectra of undoped and Mn 2+ doped CLHA nanopowders exhibited blue, blue-green emission bands at 425, 443, 468 nm and green, strong orange emission bands at 534, 577 nm respectively under the excitation wavelength of 365 nm. The CIE chromaticity coordinates were also calculated from emission spectra for undoped and Mn 2+ doped CLHA nanopowders. Vibrational bands related to phosphate molecules, P–O–H and hydroxyl ions are observed in FT-IR spectra. - Highlights: • PXRD pattern of prepared undoped and Mn 2+ doped CLHA nanopowders are in nanosize. • Optical and EPR studies reveal site symmetry of Mn 2+ doped CLHA nanopowders are distorted octahedral symmetry. • FT-IR spectra exhibits the various vibrational modes of phosphate ions, P–O–H and water molecules

Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

Science.gov (United States)

Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

2018-06-01

In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

Directory of Open Access Journals (Sweden)

Pankaj Sharma

2008-01-01

Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

Preparation of special purity Ge - S - I and Ge - Se - I glasses

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

2017-05-01

The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2

Science.gov (United States)

Deng, Quanrong; Han, Xiaoping; Gao, Yun; Shao, Guosheng

2012-07-01

A first attempt has been made to study the effect of codoping of transition metal and sp metal on the electronic structure and associated optical properties of TiO2, through V-Ga codoped thin films. V-Ga codoped rutile TiO2 films were fabricated on fused quartz substrates using pulsed laser ablation, followed by heat treatment at high temperatures. Gigantic redshift in the optical absorption edge was observed in V-Ga co-doped TiO2 materials, from UV to infrared region with high absorption coefficient. Through combined structural characterization and theoretical modeling, this is attributed to the p-d hybridization between the two metals. This leads to additional energy bands to overlap with the minimum of the conduction band, leading to remarkably narrowed band gap free of mid-gap states. The direct-gap of the co-doped phase is key to the remarkably high optical absorption coefficient of the coped titania.

The influence of Ge on optical and thermo- mechanical properties of S-Se chalcogenide glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-05-01

S-Se-Ge glasses were prepared by melt quenching method to investigate the effect of Germanium on thermo-mechanical and optical properties of chalcogenide glasses. The glassy nature of the samples has been verified by x-ray diffraction and DSC studies that the samples are glassy in nature. The optical band gap of the samples was estimated by the absorption spectrum fitting method. The optical band gap increased from 1.61 ev for x = 0 sample to 1.90 ev for x = 40 sample and is explained in terms of cohesive energies. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network, as well as the modulus of Elasticity (E) have been calculated for prepared glasses.in present glasses. The variation in these parameters with Ge content correlated with heat of atomization of alloys.

Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Mousavi, M.; Khorrami, G.H. [University of Bojnord, Department of Physics, Faculty of Basic Science, Bojnord (Iran, Islamic Republic of); Kompany, A. [Ferdowsi University of Mashhad, Department of Physics, Mashhad (Iran, Islamic Republic of); Yazdi, S.T. [Payame Noor University (PNU), Department of Physics, Tehran (Iran, Islamic Republic of)

2017-12-15

In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V{sub 2}O{sub 5} phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V{sub 2}O{sub 5} phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger. (orig.)

Effect of Er doping on optical transmission and EL spectra of (Zn, Cd)S:Cu phosphors

International Nuclear Information System (INIS)

Patil, P.K.; Nandgave, J.K.; Lawangar Pawar, R.D.

1991-01-01

Powder phosphors((Znsub(0.4)Cdsub(0.6))S)doped with Cu and Er have been prepared under the inert atmosphere of argon. The optical transmission spectra of Cu doped phosphors have been investigated and explained on the basis of copper associated defect states. The improvement of optical transmission of the phosphors due to Er doping has been reported and explained. The EL emission spectrum of (Znsub(0.4)Cdsub(0.6))S:Cu:Er phosphors exhibits two broad bands characteristic of Cu. The absence of characteristic Er bands has been explained as an effect of thermal quenching of Er donor levels. (author). 9 refs., 2 figs

Thermally and optically tunable lasing properties from dye-doped holographic polymer dispersed liquid crystal in capillaries

Science.gov (United States)

Chen, Maozhou; Dai, Haitao; Wang, Dongshuo; Yang, Yue; Luo, Dan; Zhang, Xiaodong; Liu, Changlong

2018-03-01

In this paper, we investigated tunable lasing properties from the dye-doped holographic polymer dispersed liquid crystal (HPDLC) gratings in capillaries with thermal and optical manners. The thermally tunable range of the lasing from the dye-doped HPDLC reached 8.60 nm with the temperature ranging from 23 °C to 50 °C. The optically tunable laser emission was achieved by doping azo-dye in HPDLC. The transition of azo-dye from trans- to cis-state could induce the reorientation of LC molecules after UV light irradiation, which resulted in the variation of refractive index contrast of LC-rich/polymer-rich layer in HPDLC. Experimentally, the emission wavelength of lasing showed a blueshift (about 2 nm) coupled with decreasing output intensities. The tunable laser based on HPDLC may enable more applications in laser displays, optical communication, biosensors, etc.

Research Update: Strain and composition effects on ferromagnetism of Mn0.05Ge0.95 quantum dots

Directory of Open Access Journals (Sweden)

Liming Wang

2016-04-01

Full Text Available Mn0.05Ge0.95 quantum dots (QDs samples were grown by molecular beam epitaxy on Si substrates and 15-nm-thick fully strained Si0.8Ge0.2 virtual substrates, respectively. The QDs samples grown on the Si0.8Ge0.2 virtual substrates show a significant ferromagnetism with a Curie temperature of 227 K, while the QDs samples grown on the Si substrates are non-ferromagnetic. Microstructures of the QDs samples were characterized by high resolution transmission electron microscopy and synchrotron radiation X-ray diffraction. Interdependence between microstructure and ferromagnetism of Mn-doped Ge QDs was investigated. For the QDs sample grown on the strained Si0.8Ge0.2 virtual substrate, although the ferromagnetic phase Mn5Ge3 clusters were found to be formed in small dome-shaped dots, the significant ferromagnetism observed in that sample is attributed to ferromagnetic phase Mn-doped large dome-shaped Ge QDs, rather than to the ferromagnetic phase Mn5Ge3 clusters. The fully strained Si0.8Ge0.2 virtual substrates would result in a residual strain into the QDs and an increase in Ge composition in the QDs. Both consequences favor the formations of ferromagnetic phase Mn-doped Ge QDs from points of view of quantum confinement effect as well as Mn doping at substitutional sites.

Optical analysis of Cr-doped ITO films deposited by double-target laser ablation

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it [Departiment of Mathematics and Physics ”Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); Caricato, A.P. [Departiment of Mathematics and Physics ”Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); Maruccio, G. [Departiment of Mathematics and Physics ”Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); National Nanotechnology Laboratory (NNL) Istituto Nanoscienze-CNR, Via Arnesano, 73100 Lecce (Italy); Martino, M. [Departiment of Mathematics and Physics ”Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy)

2015-06-15

We investigate the optical properties of ITO and Cr-doped ITO films deposited at room temperature by pulsed laser deposition onto amorphous SiO{sub 2} substrates. Our analysis approach is based on the Tauc's plot method applied to the absorption coefficient estimated by a route realistically describing the film structural features and including the contribution of the non-measurable film–substrate interface. Going beyond the conventional application of the Tauc's plot method, we quote two different transition energies for ITO and Cr-doped ITO and discuss their origin in the framework of a band-structure picture as a function of film thickness, Cr changes of the host ITO dispersion and Cr-doping content. In contrast to the conventional optical ITO description, we account for the existence of direct dipole forbidden transitions between the ITO fundamental band edges, involving different electronic and optical band gaps. Our results and discussion demonstrate that disregarding this theoretically established picture, as occurs in the experimental literature, would lead to conclusions inconsistent with the Cr-induced band occupation and effects on ITO dispersions. Preliminary optical (based on transmittance and reflectance spectra as well as band-tailing effects), electrical and structural inspection of the samples are also considered to check reliability and consistency of our discussion. - Highlights: • Realistic absorption coefficient of very thin films. • Electronic and optical band gap: ITO dipole forbidden optical transitions. • Interpretative model combining realistic band structure and Tauc's plot approach. • Inconsistencies stemming from conventional application of the Tauc's plot. • General model applicable to In{sub 2}O{sub 3}-like systems.

Optical analysis of Cr-doped ITO films deposited by double-target laser ablation

International Nuclear Information System (INIS)

Cesaria, M.; Caricato, A.P.; Maruccio, G.; Martino, M.

2015-01-01

We investigate the optical properties of ITO and Cr-doped ITO films deposited at room temperature by pulsed laser deposition onto amorphous SiO 2 substrates. Our analysis approach is based on the Tauc's plot method applied to the absorption coefficient estimated by a route realistically describing the film structural features and including the contribution of the non-measurable film–substrate interface. Going beyond the conventional application of the Tauc's plot method, we quote two different transition energies for ITO and Cr-doped ITO and discuss their origin in the framework of a band-structure picture as a function of film thickness, Cr changes of the host ITO dispersion and Cr-doping content. In contrast to the conventional optical ITO description, we account for the existence of direct dipole forbidden transitions between the ITO fundamental band edges, involving different electronic and optical band gaps. Our results and discussion demonstrate that disregarding this theoretically established picture, as occurs in the experimental literature, would lead to conclusions inconsistent with the Cr-induced band occupation and effects on ITO dispersions. Preliminary optical (based on transmittance and reflectance spectra as well as band-tailing effects), electrical and structural inspection of the samples are also considered to check reliability and consistency of our discussion. - Highlights: • Realistic absorption coefficient of very thin films. • Electronic and optical band gap: ITO dipole forbidden optical transitions. • Interpretative model combining realistic band structure and Tauc's plot approach. • Inconsistencies stemming from conventional application of the Tauc's plot. • General model applicable to In 2 O 3 -like systems

Electronic Structure and Optical Properties of Co and Fe doped ZnO

Directory of Open Access Journals (Sweden)

Li Chunping

2016-01-01

Full Text Available First-principle ultrasoft pseudo potential approach of the plane wave based on density functional theory has been used for studying the electronic characterization and optical properties of ZnO and Fe, Co doped ZnO. The results show that the doping impurities change the lattice parameters a little, but bring more changes in the electronic structures. The band gaps are broadened by doping. And the Fermi level accesses to the conduction band which will lead the system to show the character of metallic properties. The dielectric function and absorption peaks are identified and the changes compared to pure ZnO are analyzed in detail.

The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

International Nuclear Information System (INIS)

Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

2017-01-01

Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

Optical properties of Dy3+ doped yttrium aluminium borate

International Nuclear Information System (INIS)

Vazquez, R MartInez; Osellame, R; Marangoni, M; Ramponi, R; Dieguez, E; Ferrari, M; Mattarelli, M

2004-01-01

A Dy 3+ doped yttrium aluminium borate (Dy:YAB) crystal has been optically characterized. The refractive indices at seven different wavelengths, ranging from the visible to the near infrared (IR), have been measured and the Sellmeier curves have been calculated. The polarized optical absorption spectra have been obtained at room temperature, and the Judd-Ofelt parameters have been calculated. The lifetime of the upper laser level 4 F 9/2 has been estimated and compared with the experimental value. Evidence of high luminescence quantum efficiency of the 4 F 9/2 state in YAB is provided by measured lifetimes

Thermal hypersensitisation and grating evolution in Ge-doped optical fibre

DEFF Research Database (Denmark)

Sørensen, Henrik Rokkjær; Canning, John; Kristensen, Martin

2005-01-01

Low temperature (sub 1000°C) thermal hypersensitisation is reported in germanosilicate optical waveguides. Gratings are written using a CW 266nm laser source. In contrast to laser hypersensitisation, thermal excitation is generally dispersive involving a range of specific glass sites. More comple...... grating profiles presenting evidence of solid-state autocatalysis and bistability at increasingly high sensitisation temperatures are observed. More specifically, at 500°C, a behaviour resembling type IIA grating response is observed....

Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.

1985-11-01

An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser

Science.gov (United States)

Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai

2018-03-01

An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.

An investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films

Science.gov (United States)

Turgut, G.; Keskenler, E. F.; Aydın, S.; Yılmaz, M.; Doǧan, S.; Düzgün, B.

2013-03-01

F and Nb + F co-doped SnO2 thin films were deposited on glass substrates by the spray pyrolysis method. The microstructural, morphological, electrical and optical properties of the 10 wt% F doped SnO2 (FTO) thin films were investigated specifically for niobium (Nb) doping in the range of 0-4 at.% with 1 at.% steps. As shown by the x-ray diffraction patterns, the films exhibited a tetragonal cassiterite structure with (200) preferential orientation. It was observed that grain sizes of the films for (200) and (301) peaks depended on the Nb doping concentration and varied in the range of 25.11-32.19 and 100.6-183.7 nm, respectively. The scanning electron microscope (SEM) micrographs showed that the FTO films were made of small pyramidal grains, while doubly doped films were made of small pyramidal grains and big polyhedron grains. From electrical studies, although 1 at.% Nb doped FTO films have the lowest sheet resistance and resistivity values, the highest figure-of-merit and optical band gap values obtained for FTO films were 16.2 × 10-2 Ω-1 and 4.21 eV, respectively. Also, infrared reflectivity values of the films were in the range of 97.39-98.98%. These results strongly suggest that these films are an attractive candidate for various optoelectronic applications and for photothermal conversion of solar energy.

Final papers from TS/LEA

CERN Document Server

Presland, A; De Jonge, L; Pignard, Christian; Dimovasili, E; Herty, A; Mainaud-Durand, H; Marin, A; Ossart, F; Glaser, M; Ravotti, F; Moll, M; CERN. Geneva. TS Department

2005-01-01

Gamma-ray induced optical absorption in ge and p-doped fibres at the LHC radiation tolerant commercial of the shelf components for the remote readout of radfets and pin diodes radiation induced effects on the sensors of the hydrostatic leveling system for the lhc low beta quadrupoles dosimetry assessments in the irradiation facilities at the cern-ps accelerator.

Electronic structure and optical properties of noncentrosymmetric LiGaGe{sub 2}Se{sub 6}, a promising nonlinear optical material

Energy Technology Data Exchange (ETDEWEB)

Lavrentyev, A.A.; Gabrelian, B.V.; Vu, V.T.; Ananchenko, L.N. [Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Yelisseyev, A.; Krinitsin, P.G. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)

2016-11-15

X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar{sup +} ion-bombarded surfaces of LiGaGe{sub 2}Se{sub 6} single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe{sub 2}Se{sub 6} is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe{sub 2}Se{sub 6} compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe{sub 2}Se{sub 6}, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe{sub 2}Se{sub 6}, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe{sub 2}Se{sub 6} single crystal. The main optical characteristics of the LiGaGe{sub 2}Se{sub 6} compound are elucidated by the first-principles calculations.

Development of tailor-made silica fibres for TL dosimetry

International Nuclear Information System (INIS)

Bradley, D.A.; Abdul Sani, Siti F.; Alalawi, Amani I.; Jafari, S.M.; Noor, Noramaliza M.; Hairul Azhar, A.R.; Mahdiraji, Ghafour Amouzad; Tamchek, Nizam; Ghosh, S.; Paul, M.C.; Alzimami, Khalid S.; Nisbet, A.; Maah, M.J.

2014-01-01

The Ge dopant in commercially available silica optical fibres gives rise to appreciable thermoluminscence (TL), weight-for-weight offering sensitivity to MV X-rays several times that of the LiF dosimeter TLD100. The response of these fibres to UV radiation, X-rays, electrons, protons, neutrons and alpha particles, with doses from a fraction of 1 Gy up to 10 kGy, have stimulated further investigation of the magnitude of the TL signal for intrinsic and doped SiO 2 fibres. We represent a consortium effort between Malaysian partners and the University of Surrey, aimed at production of silica fibres with specific TL dosimetry applications, utilizing modified chemical vapour deposition (MCVD) doped silica–glass production and fibre-pulling facilities. The work is informed by defect and dopant concentration and various production dependences including pulling parameters such as temperature, speed and tension; the fibres also provide for spatial resolutions down to <10 µm, confronting many limitations faced in use of conventional (TL) dosimetry. Early results are shown for high spatial resolution (∼0.1 mm) single-core Ge-doped TL sensors, suited to radiotherapy applications. Preliminary results are also shown for undoped flat optical fibres of mm dimensions and Ge-B doped flat optical fibres of sub-mm dimensions, with potential for measurement of doses in medical diagnostic applications. - Highlights: • Optical fibres tailor-made for TL dosimetry. • Sensitive to diagnostic as well as therapy doses in medicine. • Preform and fibre pulling facilities. • Relative TL and EPR measurements

Effect of temperature on the active properties of erbium-doped optical fibres

Energy Technology Data Exchange (ETDEWEB)

Kotov, L V [Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation); Ignat' ev, A D [FORC - Photonics group, Moscow (Russian Federation); Bubnov, M M; Likhachev, M E [Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation)

2016-03-31

We have studied the effect of heating on the performance of erbium-doped fibre based devices and determined temperaturedependent absorption and emission cross sections of the erbium ion in silica glass. The results demonstrate that heating of fibres in claddingpumped high-power (∼100 W) erbium-doped fibre lasers causes no significant decrease in their efficiency. In contrast, superluminescent sources operating in the long-wavelength region (1565 – 1610 nm) are extremely sensitive to temperature changes. (fiber optics)

Spectrally selective molecular doped solids: spectroscopy, photophysics and their application to ultrafast optical pulse processing

International Nuclear Information System (INIS)

Galaup, Jean-Pierre

2005-01-01

The persistent spectral hole-burning (PSHB) phenomenon observed in molecular doped polymers cooled down to liquid helium temperatures allows the engraving of spectral structures in the inhomogeneous absorption profile of the material. This phenomenon known since 1974 has became a fruitful field for the study of the intimacy of complex molecular systems in the solid state, revealing high-resolution spectroscopy, photophysics, photochemistry and dynamics of molecular doped amorphous media, organic as well as inorganic. A PSHB molecular doped solid can be programmed in spectral domain and therefore, it can be converted in an optical processor capable to achieve user-defined optical functions. Some aspects of this field are illustrated in the present paper. An application is presented where a naphthalocyanine doped polymer film is used in a demonstrative experiment to prove that temporal aberration free re-compression of ultra-short light pulses is feasible. Perspectives for the coherent control of light fields or photochemical processes are also evoked

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Directory of Open Access Journals (Sweden)

E. Kasper

2012-01-01

Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Effect of B doping on optical, electrical properties and defects of ZnO films

Energy Technology Data Exchange (ETDEWEB)

Mao, Caiying [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Zhang, Hong; Li, Wanjun [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Qin, Guoping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Ruan, Haibo, E-mail: rhbcqu@aliyun.com [Chongqing Key Laboratory of Micro/Nano Materials Engineering and Technology, Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing, 402160 (China); Kong, Chunyang, E-mail: kchy@163.com [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China)

2016-08-15

Boron doped ZnO (BZO) films with B content in the range of 0–6 at.% were deposited on quartz glass substrates by RF magnetron sputtering technique. The effects of B doping content on microstructure, optical and electrical properties of BZO films were systematically investigated by XRD, SEM, AFM, XPS, PL, UV–vis–near infrared spectrophotometer and Hall-effect measurement, respectively. It is found that the crystal quality of ZnO films can be improved as B doping content increases to no larger than 4 at.% and will be deteriorated at higher B doping content. The grain size and surface roughness of the films reduce with the increase of B doping content. The BZO films exhibit tensile stress and the stress increases with B content. The transmittance of the BZO films is revealed to be 90% in the visible region. As the B doping content increases from 0 to 6 at.%, the optical band gap of BZO films enhances from 3.28 to 3.57 eV, which is found to increase linearly with the tensile stress in the films. The lowest resistivity of 1.58 × 10{sup −3} (Ω cm) is obtained at 2 at.% B doping content. XPS and PL analyses demonstrated that B doping can promote the formation of defects of zinc interstitials (Zn{sub i}) and oxygen vacancies (V{sub O}). - Highlights: • The relationship of band gap (E{sub g}) and stress (σ) in BZO is deduced. • XPS and PL illustrate B doping can promote the formation of Zn{sub i} and V{sub O} in BZO. • The lowest resistivity (1.58 × 10{sup −3} Ω cm) is obtained at 2 at.% B content.

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

2014-01-01

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

International Nuclear Information System (INIS)

Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

2013-01-01

Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

Theoretical insights into the minority carrier lifetime of doped Si—A computational study

Science.gov (United States)

Iyakutti, K.; Lavanya, R.; Rajeswarapalanichamy, R.; Mathan Kumar, E.; Kawazoe, Y.

2018-04-01

Using density functional theory, we have analyzed the ways and means of improving the minority carrier lifetime (MCL) by calculating the band structure dependent quantities contributing to the MCL. We have computationally modeled silicon doped with different elements like B, C, N, O, P, Ti, Fe, Ga, Ge, As, In, Sn, Sb, and Pt and looked at the effect of doping on MCL. In co-doping, the systems Si-B-Ga, Si-B-Ge, Si-B-2Ge, Si-B-Pt, Si-Ga-Ge, Si-Ga-2Ge, and Si-Ga-Pt are investigated. From our calculation, it is found that by doping and co-doping of Si with suitable elements having "s" and "p" electrons, there is a decrease in the recombination activity. The predicted effective minority carrier lifetime indicates the possibility of significant improvements. Based on the above studies, it is now maybe possible, with suitable choice of dopant and co-dopant material, to arrive at part of a standard production process for solar grade Si material.

Arsenic complexes optical signatures in As-doped HgCdTe

Energy Technology Data Exchange (ETDEWEB)

Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. [CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

2013-04-08

In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

Arsenic complexes optical signatures in As-doped HgCdTe

International Nuclear Information System (INIS)

Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.

2013-01-01

In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

Fiber-optic thermometer application of thermal radiation from rare-earth end-doped SiO2 fiber

International Nuclear Information System (INIS)

Katsumata, Toru; Morita, Kentaro; Komuro, Shuji; Aizawa, Hiroaki

2014-01-01

Visible light thermal radiation from SiO 2 glass doped with Y, La, Ce, Pr, Nd, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu were studied for the fiber-optic thermometer application based on the temperature dependence of thermal radiation. Thermal radiations according to Planck's law of radiation are observed from the SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu at the temperature above 1100 K. Thermal radiations due to f-f transitions of rare-earth ions are observed from the SiO 2 fibers doped with Nd, Dy, Ho, Er, Tm, and Yb at the temperature above 900 K. Peak intensities of thermal radiations from rare-earth doped SiO 2 fibers increase sensitively with temperature. Thermal activation energies of thermal radiations by f-f transitions seen in Nd, Dy, Ho, Er, Tm, and Yb doped SiO 2 fibers are smaller than those from SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu. Thermal radiation due to highly efficient f-f transitions in Nd, Dy, Ho, Er, Tm, and Yb ions emits more easily than usual thermal radiation process. Thermal radiations from rare-earth doped SiO 2 are potentially applicable for the fiber-optic thermometry above 900 K

Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

2016-05-15

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.